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2001.09942 | 1 | 2001 | 2019-10-07T07:14:33 | Ultrasonic identification technique in recycling of lithium ion batteries | [
"physics.app-ph",
"cs.SD",
"eess.AS"
] | The recycling of lithium ion batteries has been mentioned as one of the near-future waste management necessities. In order for recycling to be economically viable, straightforward and cost effective techniques need to be developed to separate the individual materials in a composite electrode. Ultrasonic separation might be such a technique, provided that lithium ion battery microparticles respond predictably to a sound field. Lithium ion battery cathodes contain hydrophobic carbon. Owing to the incompressibility of a solid, the thin gaseous layer surrounding these hydrophobic particles must oscillate asymmetrically, when subjected to ultrasound. Consequently, the harmonic content of the ultrasound signal radiated from hydrophobic microparticles must be higher than that from hydrophilic microparticles with the same size. The question of whether the harmonic signal response generated by physical hydrophobic microparticles present in lithium ion battery cathodes is higher than the harmonic response of other component materials in the cathode is the focus of this paper. The scattering response of cathode materials subjected to 1-MHz ultrasound was measured and compared. The cathode materials C65, PVDF, and NMC respond differently to 1-MHz ultrasound. The superharmonic response of C65 has been attributed to asymmetric oscillations owing to its hydrophobicity. In addition, C65 hydrophobic microparticles might be suitable candidates for harmonic imaging. | physics.app-ph | physics | Ultrasonic Identification Technique in Recycling of
Lithium Ion Batteries
Michiel Postema1,2,3
1School of Electrical and Information
Satyajit Phadke2,6
2 LE STUDIUM
Engineering
Loire Valley Institute of Advanced
Studies
Orléans, France
University of the Witwatersrand,
Johannesburg, South Africa
[email protected]
Rustem Uzbekov4,5
4 Department of Microscopy
Faculté de Médecine
Université de Tours
Tours, France
Anthony Novell3
3Inserm Research Unit U1253: iBrain
Faculté de Médecine
Université de Tours
Tours, France
[email protected]
[email protected]
Cuthbert Nyamupangedengu1
School of Electrical and Information
Engineering
University of the Witwatersrand,
Johannesburg, South Africa
Mériém Anouti6
6 Physiochimie des Matériaux et
Electrolytes pour l'Energie (PCM2E)
Université de Tours
Tours, France
5 Faculty of Bioengineering and
[email protected]
[email protected]
Informatics
Moscow State University
Moscow, Russia
[email protected]
Ayache Bouakaz3
Inserm Research Unit U1253: iBrain
Faculté de Médecine
Université de Tours
Tours, France
[email protected]
Abstract -- The recycling of lithium ion batteries has been
mentioned as one of the near-future waste management
necessities. In order for recycling to be economically viable,
straightforward and cost effective techniques need to be
developed to separate the individual materials in a composite
electrode. Ultrasonic separation might be such a technique,
provided that lithium ion battery microparticles respond
predictably to a sound field. Lithium ion battery cathodes
contain hydrophobic carbon. Owing to the incompressibility of
a solid, the thin gaseous layer surrounding these hydrophobic
particles must oscillate asymmetrically, when subjected to
ultrasound. Consequently, the harmonic content of the
ultrasound signal radiated from hydrophobic microparticles
must be higher than that from hydrophilic microparticles with
the same size. The question of whether the harmonic signal
response generated by physical hydrophobic microparticles
present in lithium ion battery cathodes is higher than the
harmonic response of other component materials in the cathode
is the focus of this paper. The scattering response of cathode
materials subjected to 1-MHz ultrasound was measured and
compared. The cathode materials C65, PVDF, and NMC
respond differently to 1-MHz ultrasound. The superharmonic
response of C65 has been attributed to asymmetric oscillations
owing to its hydrophobicity. In addition, C65 hydrophobic
microparticles might be suitable candidates for harmonic
imaging.
Keywords -- lithium ion battery recycling, cathode material
identification, cathode separation, harmonic imaging, ultrasonic
particle manipulation.
I. INTRODUCTION
There are world-wide efforts aimed at achieving energy
transition into more environmentally sustainable technologies
that have minimal or no carbon footprint. In the electricity
sector and ancillary technologies such as those driving the 4th
Industrial Revolution, the efficiency of energy storage
batteries is critical. Consequently, there have been concerted
efforts
improvement of battery
technologies. As an example, in the motor vehicle industry,
towards continuous
electrical vehicles largely use lithium ion batteries instead of
the traditional Lead-acid batteries.
In the context of sustainability, recycling of batteries
becomes a standard requirement. However, while Lead-acid
batteries are widely recycled, the same cannot be said about
lithium ion batteries. Recycling of lithium ion batteries is
more challenging due to the wider variety of materials in each
cell [1]. Furthermore, the materials are not discrete as in Lead-
acid batteries. Despite the challenges, there is ongoing search
for viable methods of recycling lithium ion batteries [1].
Various alternatives of recycling lithium ion batteries have
been attempted, such as the pyrometallurgical process, the
hydrometallurgical process and the direct physical recycling
process [2]. In order for recycling to be economically viable,
straightforward and cost-effective techniques need to be
developed to identify and separate the individual materials in
a composite electrode.
Typically, the cathode in a lithium ion battery consists of
three components, namely the active material
lithium
transition metal oxide, conductive carbon particles, and a
polymer binder. For construction of the battery electrodes, the
three materials are mixed intimately in industrial binders so as
to obtain a homogeneous composite cathode material. This
cathode material composite is then used for the fabrication of
batteries. In order to effectively recycle the materials, the three
components need to be individually segregated so that the
different materials can be separately processed chemically
[3,4].
Ultrasonic separation might be a suitable segregation
technique, provided that lithium ion battery microparticles
respond predictably to a sound field. The forcing of
microparticles by means of ultrasonic manipulation has been
studied extensively in the medical field [5,6].
Lithium ion battery cathodes contain hydrophobic carbon,
which is used as an additive for enhancing the electrical
conductivity of the electrode through a conductive network
[7,8]. Owing to the incompressibility of a solid, the thin
XXX-X-XXXX-XXXX-X/XX/$XX.00 ©20XX IEEE
gaseous layer surrounding these hydrophobic particles must
oscillate asymmetrically, i.e., the radial excursion amplitude
of the outer gaseous surface is greater during expansion than
during contraction, when subjected
to ultrasound [9].
Consequently, the harmonic content of the ultrasound signal
radiated from hydrophobic microparticles must be higher than
that from hydrophilic microparticles of the same size.
Therefore, such microparticles might be suitable agents for
harmonic imaging. Examples of numerical simulations of the
acoustic response from incompressible droplets surrounded by
gaseous shells have been presented in [10], indicating a
significant higher harmonic content of these so-called
antibubbles compared to conventional bubbles without a
droplet core.
The question of whether the harmonic signal response
generated by physical hydrophobic microparticles present in
lithium ion battery cathodes is higher than the harmonic
response of other component materials in the cathode is the
focus of this paper.
The scattering response of cathode materials subjected to
1-MHz ultrasound was measured and compared. Differences
in acoustic response make particles identifiable and therefore
easier to separate.
II. MATERIALS AND METHODS
We prepared four media for this evaluation.
The first material studied was a 1-ml Otec® R0,9% saline
(LABORATOIRE AGUETTANT, Lyon, France) emulsion
containing 20-mg Li(Ni0.33Co0.33Mn0.33)O2 (NMC) cathode
active material (Targray, Kirkland, QC, Canada). The second
material studied was a 1-ml saline emulsion containing 11 mg
Polyvinylidene Fluoride (PVDF) binder (Targray). The third
material studied was a 1-ml saline emulsion containing 12mg
TIMCAL SUPER C65 Carbon Black (EQ-Lib-SuperC65)
conductive additive (MTI Corporation, Richmond, CA,
USA).
In addition, a medium consisting of just saline was
similarly studied. The experiments with saline were
performed as null experiments.
For illustration of the microparticle sizes, Fig. 1 presents a
scanning electron microscope image of a dried mixture of the
three materials. In preparation of this image, dry samples were
sprinkled onto carbon disks before observation under a Zeiss
Ultra plus FEG-SEM scanning electron microscope (Carl
Zeiss Microscopy GmbH, Jena, Germany).
The materials to be evaluated were shaken for 60 s in a
CapMix™ (3M ESPE, Seefeld, Germany). From these
emulsions, 20 µl was pipetted into a Fisherbrand® FB55143
macro cuvette (Fisher Scientific SAS, Illkirch, France)
containing 3 ml saline. The cuvette was then placed centrally
in a container filled with degassed water.
Fig. 1. Scanning electron microscope image of a dried mixture of C65,
PVDF, and NMC.
The experimental setup used was presented in a previous
study [11]. Briefly, as described in [12], an unfocussed
transmitting single-element transducer was mounted to one
side and a receiving single-element transducer was mounted
perpendicularly to the transmitting transducer, as illustrated in
Fig. 2. A metal frame was attached to the container so that the
media under investigation could be positioned precisely.
Fig. 2. Top view of the experimental setup [11].
In each experiment, a pulse from a WW5061 50 MS/s
waveform generator (Tabor Electronics Ltd., Nesher, Israel)
was triggering a 33220A arbitrary function generator (Agilent
Technologies, Santa Clara, CA, USA), which generated 20
cycles of a 1-MHz, 100 mV peak-to-peak signal. The signal
was attenuated with a 75-A-MFN-03 75-W, 3-dB attenuator
(Foshan Yixun Co Ltd, Longjiang, PR China) and
subsequently amplified by an AAP-500-0.2-6-D500-W power
amplifier (ADECE, Veigne, France). The signal was
transmitted with an unfocussed custom 1.0-MHz transmitting
single-element transducer (SOFRANEL, Sartrouville, France)
with a 13-mm diameter. A custom 2.25-MHz, 60%-bandwidth
receiving
(SOFRANEL,
Sartrouville, France) with a 51-mm diameter and focussed at
55 mm was mounted perpendicularly to the transmitting
transducer.
single-element
transducer
The received signal was amplified by 20 dB using a
5077PR square wave pulser/receiver (Olympus Corporation,
Shinjuku, Tokyo, Japan) in receive mode. It was recorded
using a TDS 3044B digital oscilloscope (Tektronix,
Beaverton, OR, USA). The recorded signal was transferred to
a personal computer using a GPIB cable and MATLAB®
(The MathWorks, Inc., Natick, MA, USA) software.
Tx: 1 MHzRx: 2.25 MHz The time-delay between transmission and first reception
was determined manually before the experiments. The time of
first reception was set as origin in the recordings. In each
experiment, a response signal with a duration of 100 µs was
recorded at a sampling rate of 100 MHz.
Thirty identical experiments were performed for each of
the three media containing microparticles, i.e., C65, NMC,
and PVDF. Four hundred and fifty identical experiments were
performed with saline alone.
Using the Fast Fourier Transform, frequency spectra of the
recorded signals were computed in MATLAB®. For each
medium studied, the response from the thirty experiments was
averaged. Spectral noise was removed with a five-point
running smoother. The resulting amplitude spectra were
normalised by the amplitude spectrum from saline alone
before being presented on a decibel scale.
III. RESULTS AND DISCUSSION
Fig. 4. Fourier spectrum of the acoustic response from C65: amplitude in
dB as a function of frequency in MHz.
The results from the null experiments with saline are
presented in Fig 3.
The results from the experiments with PVDF are presented
in Fig. 5. Here, the fundamental response shows two peaks up
to 5 dB. Given that the amplitude spectrum has been
normalised by the spectrum of the null experiments with saline
alone, this means that the fundamental response from PVDF
is wide-band. In addition, a narrowband 2-MHz peak is
evident.
Fig. 3. Fourier spectrum of the acoustic response from saline: amplitude in
dB as a function of frequency in MHz.
A wide-band fundamental mode is evident in the response.
Not only can higher harmonics be appreciated at 2 MHz and
3 MHz, but also ultraharmonics at 1.5 MHz and 2.5 MHz. This
response can be attributed to the geometry of the setup, which
allows for multiple reflections from the cuvette surfaces and
scattering from its sharp corners.
The results from the experiments with C65 are presented
in Fig. 4. The fundamental response around 0 dB indicates that
the acoustic response from C65 does not significantly differ
from that of the saline medium. However, wide-band higher
harmonics at 2 MHz and 3 MHz of more than 20 dB can be
appreciated.
The higher harmonics
these hydrophobic
microparticles has been attributed to the asymmetry between
expansion and contraction predicted from theory.
from
Fig. 5. Fourier spectrum of the acoustic response from PVDF: amplitude in
dB as a function of frequency in MHz.
The results from the experiments with NMC are presented
in Fig. 6. The response from NMC is below 0 dB, indicating
that it acts solely as an acoustic attenuator under the
experimental conditions used here. For all experiments, the
absence of wide-band noise indicates that the microparticles
have remained intact during the experiments.
Owing to the difference in response of the emulsions, the
microparticles might be subjected to continuous sound waves,
to drive them through liquids at different velocities, causing
separation. This will be the purpose of a follow-up study.
These results also indicate the potential of hydrophobic
microparticles in harmonic imaging. The frequencies used in
these first experiments were chosen with the knowledge of the
average size of the microparticles.
aid of the IBiSA Electron Microscopy Facility of the
University of Tours and the University Hospital of Tours.
REFERENCES
[1] B. Huang, Z. Pen, X. Su and L. An, "Recycling of lithium-ion batteries:
recent advances and perspectives," Journal of Power Sources, vol. 399,
pp. 274-286, 2018.
[2] L. Gaines, "The future of automotive lithium-ion battery recycling:
and
course," Sustainable Materials
a
charting
Technologies, vol. 1-2, pp. 2-7, 2014.
sustainable
Fig. 6. Fourier spectrum of the acoustic response from NMC: amplitude in
dB as a function of frequency in MHz.
IV. CONCLUSION
The cathode materials C65, PVDF, and NMC respond
differently to 1-MHz ultrasound. The superharmonic response
of C65 has been attributed to asymmetric oscillations owing
to
its hydrophobicity. In addition, C65 hydrophobic
microparticles might be suitable candidates for harmonic
imaging.
C65 can be identified based on its characteristic, harmonic
acoustic signature. This may have implications for the
separation of
ion battery components and
consequently for the affordable recycling of lithium ion
batteries.
lithium
ACKNOWLEDGMENT
M.P. and S.P. have received funding from European
Union's Horizon 2020 research and innovation programme
under Marie Skłodowska-Curie grant agreement No 665790.
The scanning electron microscope data were obtained with the
[3] B. Xu, D. Qian, Z. Wang, Y.S. Meng, "Recent progress in cathode
materials research for advanced lithium ion batteries," Materials
Science and Engineering R, vol. 73, pp. 51-65, 2012.
[4] T. Georgi-Maschler, B. Friedrich, R. Weyhe, H. Heegn, M. Rutz,
"Development of a recycling process for Li-ion batteries," Journal of
Power Sources, vol. 207, pp.173-182, 2012.
[5] P. Tortoli, V. Michelassi, M. Corsi, D. Righi, Y. Takeuchi, "On the
interaction between ultrasound and contrast agents during Doppler
investigations," Ultrasound in Medicine & Biology, vol. 28, pp. 1265-
1273, 2001.
[6] N. Mazzawi, M. Postema, E. Kimmel, "Bubble-like response of living
blod cells and microparticles in an ultrasound field," Acta Physica
Polonica A, vol. 127, pp. 103-105, 2015.
[7] N. Nitta, F. Wu, J.T. Lee, G. Yushin, "Li-ion battery materials: present
and future," Materials Today, vol. 18, pp. 252-264, 2015.
[8] P. Meister, H. Jia, J. Li, R. Kloepsch, M. Winter, T. Placke, "Best
practice: performance and cost evaluation of lithium ion battery active
materials with special emphasis on energy efficiency," Chemistry of
Materials, vol. 28, 7203-7217, 2016.
[9] K. Johansen., and M. Postema, "Langrangian formalism for computing
acoustic
oscillations of
antibubbles," Hydroacoustics, vol. 19, pp. 197-208, 2016.
encapsulated
spherically
symmetric
[10] S. Kotopoulis, K. Johansen, O.H. Gilja, A.T. Poortinga, M. Postema,
"Acoustically active antibubbles," Acta Physica Polonica A, vol. 127,
pp. 99-102, 2015.
[11] A. Novell, J.M. Escoffre, A. Bouakaz, "Second harmonic and
subharmonic for non-linear wideband contrast imaging using a
capacitive micromachined ultrasonic transducer array," Ultrasound in
Medicine & Biology, vol. 39, pp. 1500-1512, 2013.
[12] M. Postema, A. Novell, C. Sennoga, A.T. Poortinga, A. Bouakaz,
from microscopic antibubbles," Applied
"Harmonic
Acoustics, vol. 137, pp. 148-150, 2018.
response
|
1801.04246 | 1 | 1801 | 2018-01-12T17:40:53 | Characterization of sub-monolayer coatings as novel calibration samples for X-ray spectroscopy | [
"physics.app-ph",
"physics.ins-det"
] | With the advent of both modern X-ray fluorescence (XRF) methods and improved analytical reliability requirements the demand for suitable reference samples has increased. Especially in nanotechnology with the very low areal mass depositions, quantification becomes considerably more difficult. However, the availability of suited reference samples is drastically lower than the demand. Physical vapor deposition (PVD) techniques have been enhanced significantly in the last decade driven by the need for extremely precise film parameters in multilayer production. We have applied those techniques for the development of layer-like reference samples with mass depositions in the ng-range and well below. Several types of reference samples were fabricated: multi-elemental layer and extremely low (sub-monolayer) samples for various applications in XRF and total-reflection XRF (TXRF) analysis. Those samples were characterized and compared at three different synchrotron radiation beamlines at the BESSY II electron storage ring employing the reference-free XRF approach based on physically calibrated instrumentation. In addition, the homogeneity of the multi-elemental coatings was checked at the P04 beamline at DESY. The measurements demonstrate the high precision achieved in the manufacturing process as well as the versatility of application fields for the presented reference samples. | physics.app-ph | physics | Characterization of sub-monolayer coatings as novel calibration
samples for X-ray spectroscopy
Philipp Honickea, Markus Kramerb, Lars Luhlc, Konstantin Andrianovd, Burkhard Beckhoffa,
Rainer Dietschb, Thomas Holzb, Birgit Kanngiesserc, Danny Weissbachb, Thomas Wilheind
aPhysikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin, Germany
bAXO DRESDEN GmbH, Gasanstaltstr. 8b, 01237 Dresden, Germany
cTechnische Universitat Berlin, IOAP, Hardenbergstr. 36, 10623 Berlin, Germany
dHochschule Koblenz, RheinAhrCampus, Joseph-Rovan-Allee 2, 53424 Remagen, Germany
Abstract
With the advent of both modern X-ray fluorescence (XRF) methods and improved analytical
reliability requirements the demand for suitable reference samples has increased. Especially in
nanotechnology with the very low areal mass depositions, quantification becomes considerably
more difficult. However, the availability of suited reference samples is drastically lower than the
demand. Physical vapor deposition (PVD) techniques have been enhanced significantly in the
last decade driven by the need for extremely precise film parameters in multilayer production.
We have applied those techniques for the development of layer-like reference samples with mass
depositions in the ng-range and well below. Several types of reference samples were fabricated:
multi-elemental layer and extremely low (sub-monolayer) samples for various applications in
XRF and total-reflection XRF (TXRF) analysis. Those samples were characterized and com-
pared at three different synchrotron radiation beamlines at the BESSY II electron storage ring
employing the reference-free XRF approach based on physically calibrated instrumentation. In
addition, the homogeneity of the multi-elemental coatings was checked at the P04 beamline at
DESY. The measurements demonstrate the high precision achieved in the manufacturing process
as well as the versatility of application fields for the presented reference samples.
Keywords: X-ray fluorescence, TXRF calibration, XRF calibration, quantification
1. Introduction
Improved calibration standards and reference samples of very low mass depositions in the
range of ng/mm2 and below are required to enhance the reliability of quantitative X-ray fluo-
rescence based analytical results. Detection limits of commercially available XRF instruments
have been steadily decreased while the number of applications in which smallest amounts of
materials are to be quantified has similarly increased. Driven by the search for novel material
functionalities and improved performance, the variety of investigated nanomaterial combinations
with respect to their elemental and structural composition is steadily growing, especially in en-
ergy storage applications[1] or nanoelectronics[2, 3]. For a reliable quantification with small
uncertainties of such low mass depositions, calibration samples need to provide spatially very
homogeneous material distributions without any local agglomerations. Unfortunately, the avail-
Preprint submitted to Spectrochimica Acta B
November 7, 2018
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ability of such calibration samples is very limited compared to the quickly growing amount of
scientifically and technologically relevant material systems at the nanoscale[4].
The ideal reference sample for quantitative XRF analysis in both standard XRF or in total re-
flection mode XRF (TXRF) geometry incorporates homogeneous distributions of the calibration
elements both laterally (in the sample plane) as well as vertically (in the sample depth). The total
mass depositions or layer thickness, must be low enough to ensure that both self-absorption and
secondary enhancement effects can be neglected. The secondary excitation effects, either by high
energy photoelectrons, re-absorbed fluorescence photons or scattered radiation can significantly
alter the emitted fluorescence intensities[5] since they directly affect the detection sensitivity.
An optimal but unfabricable solution to these issues would be a free standing monolayer of the
element of interest.
Earlier work on multi-elemental calibration samples for standard XRF by Pella et al.[6] was
based on a focused ion beam deposited glass film on a polycarbonate substrate. The glass films
were relatively thick (about 0.6 µm) and contained known concentrations of the elements of
interest. A correction of the emitted fluorescence radiation for self absorption was still necessary
due to the high thickness of the glass layer. In addition, beam damage could limit the life time of
the carrier material[7].
Standard calibration samples for TXRF, e.g. dried droplet samples with known analyte con-
centration or spin coated calibration samples, can significantly suffer from inhomogeneous ele-
mental distributions, both laterally and vertically[8, 9]. This can result in a severe alteration of
the emitted fluorescence intensity and thus the calibration reliability[10, 11].
In this work, we present two novel types of samples, which incorporate a reasonable compro-
mise between the mentioned requirements for an ideal calibration sample and the fabricability
using deposition techniques common in multilayer production. For standard XRF, mono- or
multielemental metal thin films as functional reference materials on thin free standing silicon
nitride membranes are presented. For applications in TXRF, very homogeneous layer-like mass
depositions on silicon wafer pieces with sub-monolayer depositions as low as 1012 atoms/cm2
are introduced.
The films are produced by physical vapor deposition (PVD) techniques that are widely applied
in multilayer production[12]. These deposition techniques assure very homogeneous layers and
a high flexibility regarding the choice of elements and mass densities[13]. The deposited mass
of a certain element and, thus, the signal strength is easily scalable[14].
In comparison with previously mentioned reference samples for TXRF and XRF such as dried
droplets (which can become problematic for very low mass depositions due to agglomeration
and crystallization in the drying process of the droplet[15]), bulk pure elements (which may have
far too high masses for quantification purposes in the ng range) or borate fluxes (in which the
ng range element of interest may be hard to detect), the samples discussed in this publication
have a number of advantages for quantitative (µ-)XRF and TXRF analyses of very low mass
depositions. The very small substrate thickness of the silicon nitride membrane (≈200 nm) and
the thin metal deposition with thicknesses ranging from sub-monolayers up to several nanometers
provide a quasi absorption free standard for which no matrix correction due to self absorption
is necessary. This also results in strongly reduced background contributions providing a good
spectral peak-to-background ratio. Experiments in transmission XRF mode are also accessible,
allowing for e.g. a constant monitoring of the incident beam. Finally, applications in confocal
µ-XRF setups are possible if the free-standing thin film is located in the common focus of the
excitation and detection beam paths. This can be used to align the beam paths or even - with a
dedicated layer structure - perform in-depth measurements targeting only one element at a time.
2
In the standard sample configuration, the fluorescence intensity for all elements is similar,
preventing a saturation of the detector by one intense fluorescence line. The metal layers are
deposited very homogeneously over the whole sample area.
Figure 1: Sum spectrum of a multi-element reference sample excited with 40 keV photons demonstrating the wide
selection of non-overlapping fluorescence lines of similar intensity.
The multi-element coating provides a wide selection of non-overlapping intense fluorescence
K-lines in the energy range of 3.6 keV (Ca-Kα) up to 74 keV (Pb-Kα). Various lines originating
from L- and M-shells are also available to extend the range below 3.6 keV. In Figure 1, an exem-
plary XRF spectrum of such a sample is shown. Fluorescence lines with absorption edges above
40 keV are not observed due to the 40 keV excitation photon energy used for the measurement
shown in Figure 1. The multi-element coating allows for obtaining a calibration curve with many
points over a broad energy range with a single measurement and direct quantification of a wide
selection of elements or by neighboring elements.
2. Fabrication and Characterization
The XRF calibration samples were manufactured as thin multi-elemental depositions on com-
mercially available silicon nitride membranes. The membrane substrates consist of a 10×10 mm2
frame with a usable membrane area of 5×5 mm2 in the center. The metal layers, with thicknesses
ranging from sub-monolayers up to several nanometers were deposited directly on the silicon ni-
tride membranes by magnetron sputtering at AXO DRESDEN GmbH. Two membranes were
coated with seven different elements each. Ca, Fe, Cu, Mo, Pd, La and Pb were sputtered on
both samples with the second sample having a ten times lower mass deposition than the first one.
The mass deposition on the samples was tuned by adjusting the power at which the magnetrons
are run as well as by the movement of the sample holder over the magnetron targets. Further,
tests were carried out to determine the ideal order and mass of the materials in the stack taking
into account possible chemical reactions between certain elements. The interface roughness -
usually a critical point in multilayer production - did not play a role here as only the total mass
in the sample system was important for the X-ray fluorescence signal. However, the lateral
homogeneity over the sample area of interest has to be very good, which was provided by the
optimized instrumental settings.
3
norm. countsphoton energy / keV5104103102101100105101520253035400La KβLa KαPd KαPd KβMo KβMo KαPb LαPb LβCa KαCu KαFe Kα Additionally, various mono-elemental coatings with thicknesses of several ten nanometers
have been fabricated and were used for experimental determinations of atomic fundamental pa-
rameters [16, 17, 18]. Here, the thickness homogeneity as well as a low surface roughness were
very important. These parameters were ensured by measuring test samples coated in the same
deposition run.
Silicon wafers, rather than silicon nitride membranes, were chosen as substrates for the TXRF
reference samples for two main reasons. First, the grazing incidence angle in TXRF is very
small, leading to a beam footprint of several centimeters, thus being larger than available silicon
nitrate membranes. Second, ultrapure industrial silicon wafers are commercially available with
extremely low contaminations. This is necessary if mass depositions down to the picogram
range are to be measured while ensuring that no unintentional contaminations at a relevant level
are present. Nickel was selected as coating element because it hardly occurs as contamination
on ultrapure industrial silicon wafers and, thus, only well-defined material amounts are present
on the sample. Being a magnetic material, it is difficult to sputter nickel with magnetrons. Thus,
Dual Ion Beam Deposition (DIBD) was selected as a fabrication technique. In DIBD an ion beam
sputters material from a target onto a sample carrier. A second ion beam in the same machine
can be used for polishing/cleaning of the substrate as well as adding additional energy to the
particles in the growing films. With typical energies between 10 eV and 100 eV (in comparison
to magnetron sputtered atoms of around 1 eV to 10 eV), this method reduces island formation
and provides very low surface roughness. Another advantage of DIBD is that critical process
parameters can be tuned continuously and thus scaled down smoothly and reproducibly. Several
runs of test samples were fabricated and measured to optimize the machine parameters and to
meet the mass depositions intended. Standard Si wafer pieces were coated with Ni at nominal
mass depositions between 9 · 1011 atoms/cm2 and 9 · 1015 atoms/cm2. Two independent sets of
samples were produced (cf. Table 1).
Table 1: List of the TXRF calibration samples fabricated in this study and nominal layer thicknesses as well as nominal
atomic mass depositions. Each set contains a pair of identical nominal layer thickness to study the run-to-run stability of
the coating process.
set
sample
dNi / nm mass dep. / at. cm−2
A
B
TX-K09-01
TX-K09-02
TX-K09-03
TX-K09-04
TX-K09-05
TX-K47-09
TX-K47-10
TX-K47-11
TX-K47-12
TX-K47-13
TX-K47-14
1
0.1
0.01
0.01
0.005
0.01
0.005
0.001
0.001
0.0005
0.0001
9.1E+15
9.1E+14
9.1E+13
9.1E+13
4.6E+13
9.1E+13
4.6E+13
9.1E+12
9.1E+12
4.6E+12
9.1E+11
Both the multi-elemental as well as the TXRF reference samples were characterized us-
4
ing transmission and fluorescence measurements at PTB employing radiometrically calibrated
instrumentation and the atomic fundamental parameter based reference-free quantification
approach[19]. Thus, the mass depositions of the coated materials can be determined without
the need for any calibration sample.
The reference-free XRF experiments were carried out at three different beamlines at the elec-
tron storage ring BESSY II. In addition, homogeneity experiments were performed at the P04
beamline at DESY. In total, an incident photon energy range of 78 eV up to 80 keV is covered
by the used beamlines. The plane grating monochromator (PGM) beamline[20] for undulator ra-
diation provides soft X-ray radiation of high spectral purity in the photon energy range of 78 eV
to 1860 eV. Hard X-ray radiation between 1.75 keV and 10.5 keV is available at the four-crystal
monochromator (FCM) beamline for bending magnet radiation[21]. Both beamlines are located
in the PTB laboratory at BESSY II[22]. Additionally, experiments employing radiation with
photon energies above 10 keV were carried out at a 7-T wavelength shifter (WLS) beamline[23].
The variable polarization XUV beamline P04 at DESY[24] with an APPLE-2 undulator covers
the tender energy range from 200 eV to 3 keV with very high brilliance and energy resolution
offered by varied line space gratings.
Figure 2: Schematic view of the experimental set up at the PTB beamlines for the characterization of the XRF reference
samples.
The experiments at all three beamlines at BESSY II were carried out in ultra high vacuum
chambers, equipped with calibrated photo diodes and an energy-dispersive silicon drift detector
(SDD) with known response functions and detection efficiency[25]. Each sample can be placed
into the center of the respective chamber by means of an x-y scanning stage. The incident angle
Ψin between the surface of the sample and the incoming beam was set to 45◦ for the experiments
using the XRF calibration samples. This setup is described in detail in [5] and a schematic
view is shown in Figure 2. For the TXRF calibration samples, a different experimental setup
allowing for experiments in total reflection and in grazing incidence (GI) mode was used. This
instrument[26] allows for the necessary realization of very small angles of incidence between the
sample surface and the exciting beam. In addition, the accurate variation of the incident angle
in a broad angular range can be ensured. The experiments at the P04 beamline at DESY were
carried out in a high vacuum chamber, equipped with a zone plate as focussing optic, a scanning
device with sub nanometer resolution and a specially designed 4-channel SDD with a solid angle
5
of detection of up to 1.2 sr[27]. The setup is a typical setup for scanning X-ray microscopy with
an incident angle Ψin set to 90◦ and the SDD detector aligned in backscatter geometry.
3. Results and discussion
3.1. XRF calibration samples
The fabricated samples were analyzed to characterize both the lateral homogeneity of the
deposition process across the membrane area and the scalability as well as the absolute mass
deposition coated on the substrate. Those were verified by comparing the quantitative results
of each element determined by reference-free XRF analysis for the two samples with a nominal
mass deposition ratio of 10. The mass depositions were derived from XRF spectra, recorded
with two different incident photon energies of 5.75 keV and 13.5 keV, respectively, to provide
optimized excitation conditions for all elements. The recorded fluorescence spectra were decon-
voluted using relevant bremsstrahlung contributions and the detector response functions of the
fluorescence lines of interest. The reference-free quantification of the elemental mass deposi-
tions was performed using the Sherman equation[28]. All relevant instrumental parameters, e.g.
the incident photon flux or the solid angle of detection are known due to the use of our physi-
cally traceable calibrated instrumentation[5, 19]. The atomic fundamental parameters, e.g. the
fluorescence yields, the Coster-Kronig factors or the photoionization cross sections have been
experimentally determined using the monoelemental coatings[16, 17, 18, 29] or were taken from
databases[30, 31, 32]. The results of the reference-free quantification are shown in Table 2.
Table 2: Comparison of the determined mass depositions for the two multi elemental samples of 7 different coating
elements using reference-free XRF. Two different incident photon energies (E0) were chosen for optimized excitation
conditions.
Lineset
La
Pd
Mo
Fe
Cu
Ca
Pb
L3
L3
L3
K
K
K
L3
E0
5.75
5.75
5.75
13.5
13.5
5.75
13.5
keV
Multi 0.1x
12.9 ±
1.1
±
4.3
0.4
0.56 ± 0.07
4.53 ± 0.31
±
0.2
2.4
18.7 ±
1.6
±
7.1
0.5
ng mm−2
Multi 1x
±
±
±
±
122.7 ± 10.2
2.7
36.6
0.4
5.0
40.3
2.8
22.6
1.7
171.9 ± 14.2
5.2
74.3
±
ng mm−2
Ratio
± 1.2
9.6
± 1.0
8.6
± 1.3
9.1
± 0.9
8.9
± 1.0
9.3
± 1.1
9.2
10.6 ± 1.1
The determined mass ratios for each element are well in line with the nominal target value
of 10 with respect to the experimental uncertainties. The experimental uncertainties are in the
order of 8%. Main contributors to the uncertainty budget are the uncertainties of the relevant
fundamental parameters employed.
The lateral homogeneity of the samples was determined by scanning across the free-standing
membrane area with a small incident beam and recording the excited fluorescence radiation of
the elements of interest. The combination of the high brilliance of the P04 beamline at DESY and
the large solid angle of the specially designed 4-channel SDD detector was used to map several
6
areas of the coated membrane with a spot size of approximately 100×100 nm2. Acquisition times
varied between 5 ms and 20 ms per measurement and a time based continuous scanning mode
was used. An excitation photon energy of 1 keV was used in order to excite fluorescence radiation
from the M- and L-shells of several of the coating elements. To evaluate the lateral homogeneity,
regions of interest (ROI) around the characteristic fluorescence lines from the recorded spectra
for Fe-L, La-M and Cu-L were evaluated. In Figure 3, this data is shown for an acquisition time
of 20 ms and a step size of 100 nm.
Within the counting statistics of the derived ROI intensities the coating for the various metals
is homogeneous. This is confirmed by the comparison of the standard deviation σ of all mea-
surement positions with the counting statistics of the mean value
(cid:112) ¯XROI is less than 1.5% for all elements in the inspected areas.
(cid:112) ¯XROI. The difference of σ and
Figure 3: Mapping results derived from the single spectra by region of interest integration for Cu-L (green), Fe-L (red)
and La-M (blue). The pixel size is approximately 100×100 nm2. See text for further details.
3.2. TXRF calibration samples
The TXRF calibration samples were characterized regarding their homogeneity in both the
lateral and vertical directions. In the ideal case, after the deposition Ni atoms are located on
the Si wafer surface without any agglomeration or cluster formation. This can be monitored
using reference-free grazing incidence XRF (GIXRF)[33] varying the incident angle around the
critical angle for total external reflection. On flat samples, the interference between the incoming
and the reflected beam results in the so called X-ray standing wave (XSW) field. The intensity
distribution inside the XSW strongly depends on the incident angle. Thus, angular variation of
the emitted fluorescence lines reveals information about the vertical distribution of the element
of interest[34, 35, 36].
In Figure 4, GIXRF results of TXRF calibration samples with nominal Ni mass depositions of
9· 1013 atoms/cm2 (sample TX-K09-03, left hand side) and 9· 1012 atoms/cm2 (sample TX-K09-
11, right hand side) are shown. The measurement of sample TX-K09-03 was carried out at the
PGM beamline exciting Ni-L fluorescence lines with incident photons of 1.06 keV. Sample TX-
K09-11 was excited with 9 keV photons at the FCM beamline exciting also the K-fluorescence
lines of Ni. The fitted angular profiles, simulated with a thin Ni layer on the surface of the silicon
wafer, show good agreement with the measurements. Agglomeration, clustering or diffusion
would result in deviations with respect to the fitted curve at either low or high incident angles.
In order to determine the lateral homogeneity of the Ni deposition, the angular scans were
repeated at different positions across the sample surface for two samples. The resulting angular
7
Figure 4: Comparison of GIXRF measurements on two TXRF calibration samples TX-K09-03 (left hand side, measured
using Ni-Lα) and TX-K47-11 (right hand side, measured using Ni-Kα) with a targeted Ni thickness of 0.01 nm and 0.001
nm, respectively. The theoretical fits assuming a thin layer-like Ni distribution on the sample surface agree very well
with the measured curves for both samples.
fluorescence profiles reveal that, first of all, no significant variations in the position and shape
of the peak are observed. Secondly, the fluorescence intensity at high incident angles, which is
proportional to the local mass deposition of Ni, is within a range of ±2% for all measurement
points on one sample. This indicates that the deposited nickel is distributed homogeneously over
the sample surface without forming any islands or clusters.
Linearity and reproducibility of the deposition process were evaluated by quantification of
the total Ni mass depositions from the reference-free GIXRF[33] experiments for both sample
sets (details will be described later). The nominal mass depositions were calculated using the
nominal layer thickness and tabulated mass densities ρ. A comparison of the quantified Ni mass
depositions with the respective nominal values is shown in Figure 5 where the results for all
samples are plotted in comparison to the nominal values. The corresponding quantification re-
sults are shown in table 3. It should be noted, that the uncertainties of the quantification are
higher for sample set A, which was measured at the PGM beamline exciting the Ni-L fluores-
cence lines. The respective fundamental parameters[37], which are the main contributors to the
quantification uncertainty, have higher uncertainties as compared to the K-shell and, in addition,
also Coster-Kronig transitions must be taken into account.
Both sets show a linear scalability down to very low mass depositions. Due to the very small
thickness of the deposited layer, direct measurement during the deposition process was not pos-
sible. Thus, a deviation (offset) from the nominal values occurred with the coated amounts of set
A being lower than the nominal target values. The Ni amount was determined by synchrotron
radiation based reference-free XRF after completion of set A. Based on the reference-free XRF
results, the coating process was adjusted to provide (a) a better run-to-run stability, (b) a better
fit to the nominal target value and (c) a scalability down to even lower mass depositions as the
method used for set A was limited to a minimum of some picometers.
Some improvements made are the fabrication of a better and more homogeneous Ni target to
provide more flexibility in the scaling down process of the target masses. Further, deposition
slits as well es substrate movements were tuned in a new mechanical set-up to easily target the
range of 1 to 10 picometers and have degrees of freedom to move further down by a few orders
8
Table 3: Comparison of the quantification results on the TXRF calibration samples to the nominal values.
set
sample
A
B
TX-K09-01
TX-K09-02
TX-K09-03
TX-K09-04
TX-K09-05
TX-K47-09
TX-K47-10
TX-K47-11
TX-K47-12
TX-K47-13
TX-K47-14
nominal
quantified
mass dep. / at. cm−2 mass dep. / at. cm−2
9.1E+15
9.1E+14
9.1E+13
9.1E+13
4.6E+13
9.1E+13
4.6E+13
9.1E+12
9.1E+12
4.6E+12
9.1E+11
6.1(1.0)E+15
6.6(1.1)E+14
4.1(0.7)E+13
1.9(0.4)E+13
1.2(0.2)E+13
3.4(0.3)E+14
1.6(0.14)E+14
2.4(0.22)E+13
2.7(0.24)E+13
2.4(0.22)E+13
3.5(0.35)E+12
of magnitude.
The second series of Ni layers (set B) shows a good linearity and a much better run-to-run
stability than set A. The coated values, however, are a bit higher than the target values. This is
caused by the above-mentioned changes in the fabrication and the lack of measurement capabil-
ities during the coating process (which could help reduce the effect). Even though the measured
values do not agree exactly with the nominal (target) values, this is not necessary for the purpose
of these reference samples. With the reproducibility and precision of the coating method a large
number of substrates can be coated in one or a few subsequent runs of which only one test sample
has to be characterized by synchrotron-based reference-free XRF measurements. These samples
can then be used as reference samples with known mass deposition.
4. Conclusions
In the present work, deposition techniques widely used for the production of multilayer mirrors
have been successfully applied to the production of XRF calibration samples. The two presented
types of calibration samples for quantitative XRF investigations are both very close to an ideal
calibration sample. The low mass depositions as well as the thin membrane backing of the
XRF samples allow to neglect self absorption and secondary excitation effects. Furthermore, the
spectral background is very low and it was shown that the lateral homogeneity of the deposited
metals is very high. This enables the routine use of these multi-elemental reference samples for
the full bandwidth of XRF applications, i.e. nano-, micro-XRF and standard XRF.
Further improvement of the reproducibility as well as a continued down scaling of the de-
posited Ni areal mass for the TXRF samples is planned. However, the current status is already
well suited for an application as a TXRF calibration sample because these samples allow for
a calibration of a TXRF instrument without the potential introduction of errors associated with
9
Figure 5: Comparison of the measured Ni mass depositions in comparison to the nominal values for both sample sets
investigated. The two circled results correspond to the samples for which the fits in fig. 4 are shown.
an unevenly dried or crystallized droplet sample. Due to the good scalability of the deposition,
several orders of magnitude for the targeted mass deposition can be covered.
5. Acknowledgements
The authors would like to thank J. Weser, M. Gerlach, M. Kolbe (all PTB) and R. Britzke
(Bundesanstalt fur Materialforschung und -prufung, BAM) for their support during the experi-
ments. The financial support by the MNPQ-Transfer program of the German Federal Ministry
of Economics and Technology is also gratefully acknowledged. Parts of this research were per-
formed within the EMPIR project 3D-Stack. The financial support of the EMPIR program is
gratefully acknowledged.
It is jointly funded by the European Metrology Program for Inno-
vation and Research (EMPIR) and participating countries within the European Association of
National Metrology Institutes (EURAMET) and the European Union.
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12
|
1705.10038 | 1 | 1705 | 2017-05-29T04:31:09 | High quality waveguides for the mid-infrared wavelength range in a silicon-on-sapphire platform | [
"physics.app-ph",
"physics.optics"
] | We report record low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses as low as 0.8dB/cm at 1550nm, 1.1 to 1.4dB/cm at 2080nm and < 2dB/cm at = 5.18 microns. | physics.app-ph | physics | High quality waveguides for the mid-infrared
wavelength range in a silicon-on-sapphire
platform
Fangxin Li,1 Stuart D. Jackson,1 Christian Grillet,1 Eric Magi,1 Darren Hudson,1
Steven J. Madden,2 Yashodhan Moghe,3 Christopher O'Brien,3* Andrew Read,3
Steven G. Duvall,3 Peter Atanackovic,3 Benjamin J. Eggleton,1 and David J. Moss1**
1 Centre for Ultrahigh-bandwidth Devices for Optical Systems (CUDOS), Institute of Photonics and Optical Science
(IPOS), School of Physics, NSW 2006, Australia
2CUDOS, Australian National University, Canberra, ACT 2006, Australia
3Silanna Semiconductor, 8 Herb Elliot St., Sydney Olympic Park, New South Wales 2137, Australia
*Present Address: Peregrin Semiconductor, California USA
**Corresponding author: [email protected]
Abstract: We report record low loss silicon-on-sapphire nanowires for
applications to mid infrared optics. We achieve propagation losses as low as
0.8dB/cm at =1550nm, 1.1 to 1.4dB/cm at =2080nm and < 2dB/cm at
= 5.18 μm.
1. Introduction
Photonic integrated circuits for the mid-infrared (2-20μm) wavelength range is a new
and burgeoning area of interest [1-8] for a variety of fundamental applications, including
thermal imaging (2.5 - 15μm) [9], chemical bond spectroscopy (from the visible to 20 μm and
beyond), astronomy [10], gas sensing, and military applications such as missile
countermeasures. Historically, however, the mid-infrared has posed challenges for photonics.
Coherent mid-infrared laser sources have been bulky and expensive, or have required
cryogenic cooling, as did common mid-infrared detectors. Recently, inexpensive and reliable
single-mode quantum cascade lasers have become commercially available for wavelengths as
long as 9 μm, and with powers from 10 - 100 mW, and this has begun to change the landscape
[11]. In addition, single-mode fibers are now available at wavelengths out to 6 μm [12,13], as
are mid-infrared photodetectors with bandwidths over 1 GHz [6]. As a result, building a
single-mode optical system in the mid-infrared is now within both financial and technical
reach. However, the lack of a suitable platform for integrated optical waveguides at these long
wavelengths has meant that to date, mid-infrared systems have been largely implemented with
free-space optics.
Silicon, in the form of silicon-on-insulator (SOI) waveguides, has attracted
significant interest recently as a potential platform for integrated optical devices for the mid-
IR [1-6,]. Silicon itself is transparent out to beyond 6μm, and has the important benefit that its
nonlinear properties are actually much better in the mid-IR than they are in the near IR [3,4].
Beyond 2μm two-photon absorption drops to zero, and so the well known problem of TPA
and the associated free carriers becomes negligible. This has motivated some recent
demonstrations of nonlinear optics in the mid IR in SOI waveguides, near 2μm [3,4].
However, for applications at longer wavelengths, the silica cladding layer that is used in the
SOI platform becomes more strongly absorbing, and substrate leakage can become an issue
[5] and so it is clearly of interest to explore other platforms. While exotic structures such as
hollow-core and freestanding waveguides have been proposed in order to avoid these
problems [13-15], probably the greatest potential lies in finding a new substrate platform that
is intrinsically more suited to the mid IR than SOI. Silicon-on-sapphire (SOS) has recently
[7,8] attracted interest for mid IR applications for a number of reasons. Not only is sapphire
transparent beyond 6μm, but the ability to realise silicon waveguides and nanowires on a low
index substrate eliminates any potential substrate leakage, in contrast with SOI where the thin
(on the order of μm) silica cladding layer is prone to leakage to the silicon substrate[5]. SOS
has the ability to realise high confinement, fully etched waveguides for use from λ=1.2μm to
almost 7μm – encompassing both telecommunications and mid-IR wavelengths, while
maintaining electronic compatibility.
Here, we demonstrate record low loss waveguides in SOS nanowires. We achieve
propagation losses below 1dB/cm in the telecom band near 1550nm, below 1.4dB/cm near
λ=2.08μm and less than 2dB/cm at λ=5.18 μm. In particular, our results at λ=5.18 μm
represent a significant reduction over the best previously published results in this wavelength
range [7,8], and are low enough to offer significant promise for many devices including
integrated ring resonators. Our results further support the feasibility of using this platform for
the mid-IR, enabling a range of new applications in this wavelength range.
a)
b)
c)
d)
Figure 1. a) Top left: device cross section. Silicon nanowire widths were 400nm, 600nm, 800nm and 1000nm. B)Top
right: schematic of 1cm x 1cm chip layout. Note not all devices are shown. c) Bottom left: SEM picture of fabricated
device and d) Bottom right: higher magnification image of a bend with a radius of 10m.
2. Experiment
Figure 1 shows a cross section of the device along with a schematic of the chip layout.
Epitaxially grown SOS wafers (100 mm diameter, 1mm thick, with 280nm of silicon on top)
were patterned with silicon nanowires having lengths of 10, 20, 30, 40 and 48mm and a range
of widths of 400, 600, 800 and 1,000 nm 133using an I-line stepper mask aligner, followed by
reactive ion dry etching. The wafer was then over-coated with 2 µm of SiO2 using PECVD,
and then the final wafer was laser-scribed on the underside and cleaved to 1cm x 1cm chips.
Figure 1 summarizes the chip layout (note that all devices are not shown), and also shows
SEM images of the final fabricated nanowires. For each length we included the full range of
nanowire widths. Waveguides longer than 1cm were accommodated by adding bends (10µm
bend radius) with end structures being simply straight nanowires – ie., no attempt was made to
optimize coupling. This layout facilitated performing "cut-back" measurements without
having to cleave different length samples.
We performed loss measurements at 3 different wavelengths – λ=1550nm, λ=2080nm,
and λ=5.18µm, using 3 different experimental setups. At λ=1550nm the measurements were
performed using a standard tunable diode laser and coupling was achieved via lensed fiber-
tapers controlled with nanopositioning stages, with the ability to image the mode profile on a
digital camera.
The measurements at λ=2080nm, were performed using a CW Thulmium doped fiber
laser [16] with the same lensed fiber taper coupling setup as the λ=1550nm measurements.
The fiber laser output was collimated and coupled into SM2000 fiber that can operate up to
2.1 μm (Thorlabs) containing the lensed taper. The output fiber was directly input to a
temperature controlled InGaAs detector (sensitive to 2.4m). We used a Wollaston prism to
polarize the laser output, followed by a polarization paddle controller to control the
polarization state.
Figure 2 shows the experimental setup for the measurements at λ=5.18µm. We used a
(Daylight Solutions) tunable CW quantum cascade laser (50mW output) capable of producing
linearly polarized light from 5.07 μm to 5.37 μm, coupled this into a very short length (50cm)
of single mode AsSe chalcogenide fiber [17] having a mode diameter of 8µm at this
wavelength. The laser emitted TE polarized light (horizontal) which was not altered
substantially by the short fiber length. We then butt coupled the chalcogenide fiber to the
nanowire ensuring the light was TE polarized, and the output was then imaged on a mid IR
camera using a ZnSe mid IR objective lens (AR coated) with a focal length of 6mm. The
mode profiles were imaged using a Spiricon Beam Profiling Cameras (OPHIR) and averaged
250 times. Relative loss measurements at λ=5.18µm were obtained by measuring the intensity
of the central guided mode peak on the imaging camera as a function of waveguide length.
This method was highly effective at discriminating against scattered light or substrate guided
light. The drawback is that we were only able to obtain relative loss measurements which
yielded only propagation loss, not coupling loss.
Figure 2. Experimental setup for measurements at =5.18 m. QCL= quantum cascade laser. The chalcogenide fiber
was single mode As2Se3 fiber.
3. Results
Figure 3 shows the results of loss measurements at both λ=1550nm and λ=2080nm for
both TE and TM polarizations for a range of widths. Note that the absolute scale of the
measurements is meaningful here and reflects the taper-taper coupling loss that we were able
to achieve with the bare (un-tapered) nanowires. For TE polarized light the losses at
λ=1550nm varied from 0.8dB/cm up to 1.2dB/cm. The values below 1dB/cm in particular are
remarkably low loss results, considering that the state of the art loss for SOI nanowires was
around 3dB/cm for quite some time. Given the low scatter and good linearity of the loss data
at λ=1550nm we estimate the experimental uncertainty in our loss measurements is
0.1dB/cm. The variation in loss that we observed from 0.8dB/cm up to 1.2dB/cm did not
seem to depend systematically on nanowire width, and instead we ascribe this to random
variation in loss across the wafer. The low scatter in the data (relative to its linear variation
with length) reflects the high degree of consistency that we were able to achieve in facet
quality (and hence facet coupling loss) across the different nanowires for a given cleave. The
absolute taper-taper coupling loss was high at 14dB to 16dB / facet but this was expected
given the low mode overlap between the tapers (roughly 2 µm beam waist diameter) and the
nanowire modes. While the propagation loss did not show a clear cut systematic dependence
on nanowire width, the coupling loss did decrease consistently with width, as expected. Figure
3 also shows the cutback measurements at λ=2.08μm using the thulmium doped fiber laser
where we achieve losses of 1.1 dB/cm to 1.4dB/cm for TE polarized light and 1.3 dB/cm to
1.7dB/cm for TM.
a)
c)
b)
d)
Figure 3. Cutback loss measurements for different nanowire widths (400nm to 1000nm).at =1.55 m for TE (a) Top
left) and TM (b) Top right polarizations, and at =2.08 m (c) (Bottom left TE) and d) Bottom right (TM).
Figure 4 shows the results of loss measurements at λ=5.18μm, along with associated
mode profiles (TE). We observed very well defined guided modes at λ=5.18μm, and our
approach of using the mode field intensity maximum on the imaging camera to measure the
relative guided mode intensity versus length, resulted in a very high degree of discrimination
from scattered light and yielded very low scatter (deviation from linearity) in the cutback
measurements. From Figure 4 we see that the propagation losses were 1.920.05dB/cm for
the 1000nm wide nanowires. The error bars in the loss arise from the standard deviation from
the linear fit, and are as low as they are because of the low scatter and high linearity of our
012345-36-34-32-30-28Relative Power. dBmWaveguide length, cm 1000nm : -1.16dB/cm 800nm : -0.81dB/cm 600nm : -1.12dB/cm 400nm : -0.87dB/cmTE 012345-42-40-38-36-34-32-30Relative Power, dBmWaveguide length, cm 1000nm: 1.33dB/cm 800nm: 1.17dB/cm 600nm: 1.42dB/cm 400nm: 1.40dB/cmTM 12345-40-38-36-34-32-30Relative power, dBmWaveguide length, cm 1000nm: 1.15dB/cm 800nm: 1.09dB/cm 600nm: 1.37dB/cm 400nm: 1.44dB/cm TE 12345-42-40-38-36-34-32Relative power, dBmWaveguide length, cm 1000nm: 1.34dB/cm 800nm: 1.44dB/cm 600nm: 1.73dB/cm 400nm: 1.54dB/cmTM cutback measurements in Figure 4. The corresponding results for the other widths were
1.69dB/cm for 800nm wide, 1.85dB/cm for 600nm wide, and 1.90dB/cm for 400nm wide
nanowires. We attribute the small variation in propagation loss for different widths to a
random variation across the wafer rather than any systematic dependence. The very high
quality of the results, including the low scatter and high degree of linearity in the cutback
measurements, indicates that the facet loss was extremely consistent from across the wafer.
These results represent a reduction by more than a factor of 2 (in dB/cm) over the best results
reported in SOS waveguides [7,8], and are particularly remarkable given our relatively thin
(280nm) silicon layer.
Figure 4. Cutback loss measurements at =5.18 m for W=1000nm (Top) for TE polarization
along with imaged mode profiles for each length.
4. Discussion
Overall, the propagation losses in our nanowires showed a progressive increase with
wavelength in going from λ=1550nm to λ=2080nm, and finally λ=5.18μm, and were generally
higher for TM polarization than TE, as expected. The fact that we were able to achieve less
than 1dB/cm at λ=1550nm (for TE polarization) is surprising given that typical losses for
nanowires in SOI fabricated with electron beam lithography are 3 to 4dB/cm [3,4]. We
attribute our low loss to the use of an I-line stepper mask aligner, along with the epitaxial
growth process used to produce the SOS wafers, which results in extremely low defect
density. The resolution of our stepper mask aligner was 400nm which is much lower than
that for typical electron beam lithography machines. We believe this contributed to
substantially lower sidewall roughness.
The low propagation loss at λ=5.18μm was unexpected given the thin (280nm) silicon
thickness. Figure 5 shows the results of theoretical calculations using a mode solver based on
finite element methods (FemSim, RSOFT) for the mode effective index as a function of
wavelength, along with mode profiles at two of the wavelengths studied here, for a 1000nm
wide nanowire. The mode at λ=5.18μm was actually slightly below cutoff and hence quite
delocalized, and so the plot in Figure 5 was obtained by slightly adjusting the experimental
parameters (silicon dimensions, PECVD silica cladding refractive index) to the upper end of
their experimental range, where the mode was slightly above cutoff. Figure 5 also shows the
dispersion curve for this case (green dashed line). This illustrates the extreme sensitivity of the
mode near cutoff to experimental error in the device parameters.
Whether or not the modes are near cutoff or slightly below is in fact extremely difficult to
determine theoretically for a variety of reasons. Apart from the sensitivity to the experimental
parameters discussed above, the accuracy of the calculations was limited by a number of
factors, including the extremely small nanowire dimensions (λ/10), very high index contrast,
and the fact that we are interested in the wavelength region near cutoff. We note that even if
the mode were slightly below cutoff, however, lossy modes below cutoff have been observed
in silicon before [18] with relatively low propagation losses on the order of 1 dB/cm. In this
work, it is evident that the contribution to the loss due to the leaky nature of the mode is
substantially less than 1dB/cm.
We also expected to observe high loss at λ=5.18μm due to the silica overcladding layer.
Figure 6 shows the relative fraction of the mode field energy that resides in the 3 regions
(silica cladding, silicon core, sapphire substrate) as a function of wavelength, normalized to
the cutoff wavelength. At λ=5.18μm, this corresponds to λ/λc of 1.05 to 1.10, where we see
that the fraction of the mode in the upper silica cladding is extremely low, at - 30dB. Based
on the absorption of bulk silica at this wavelength, we estimate that the contribution to the
overall propagation loss from absorption in the silica cladding is < 1dB/cm – ie., less than the
total loss we observed. Figure 6 also shows that at λ=5.18μm the majority of the mode resides
in the sapphire substrate. We note that in our structure a cutoff wavelength only exists in the
first place because of the asymmetric nature of the waveguides – ie., that the substrate
(sapphire) has a slightly higher refractive index than the upper cladding (silica). If not for this,
the waveguides would theoretically always have a guided mode. We believe that this is the
physical reason why the mode is significantly "pulled" into the substrate near cutoff in our
waveguides.
Perhaps the most surprising result is our observation of negligible bendloss at λ=5.18μm.
The mask layout was designed such that the number of bends for the different length segments
was zero (L=1cm), 2 (L=2cm and 3cm) and 4 (for L=4cm and 4.8cm). Hence, any
contribution to the overall loss would produce a deviation from the linear fit of loss versus
length. Because of the extremely high quality of our cutback results - very low scatter in the
data with high linearity, leading to a very low standard deviation - we are able to attribute an
upper limit to the bend loss of 0.1dB / bend in these waveguides. We note that in general bend
loss is much more sensitive than the mode index to all of the factors discussed above,
particularly near cutoff, and so it is perhaps not surprising that our finite element calculations
were not able to predict this. The combination of very high resolution demanded by the small
waveguide dimensions with the very extended nature of the mode near cutoff places extreme
requirements on the numerical processing. Investigation of these issues using full scale very
high resolution 3D FDTD methods on cluster computers will be reported in future work.
Finally, we note that it is not necessarily the intention of this work to advocate these
specific device dimensions as being optimal for use near λ= 5 μm. Waveguides designed for
use in that wavelength range would ideally have a thicker silicon core, as well as an upper
cladding that is intrinsically transparent (such as PECVD deposited alumina for example).
Figure 5. Calculated effective index vs for TE and TM polarizations for 1000nm wide SOS nanowires, based
on Finite Element Methods (FemSim RSOFT). The mode profiles are for the Ex component. The blue line is
the refractive index for sapphire and so the shaded blue region represents effective indices below cutoff.
Figure 6. Calculated relative fraction (in dB) of the mode energy in the three different regions (upper cladding,
core, lower cladding) as a function of wavelength normalized to cutoff. Also shown is the relative mode area.
5. Conclusions
We demonstrate record low propagation loss silicon-on-sapphire nanowires for operation
in the mid IR wavelength range, achieving < 1dB/cm at λ=1.55μm, slightly higher near
λ=2.08μm and < 2dB/cm at λ=5.18μm.
Acknowledgements
This work was supported by the Australian Research Council (ARC) Centres of
Excellence program and the ARC Federation Fellows program.
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|
1904.00610 | 1 | 1904 | 2019-04-01T07:43:33 | Entropy driven reverse-metal-to-insulator transition and delta-temperatural transports in metastable perovskites of correlated rare-earth nickelate | [
"physics.app-ph"
] | The metal to insulator transition (MIT) in Mott-Hubbard systems is one of the most important discoveries in condensed matter physics, and results in abrupt orbital transitions from the insulating to metallic phases by elevating temperature across a critical point (TMIT). Although the MIT was previously expected to be mainly driven by the orbital Coulomb repulsion energy, the entropy contribution to the orbital free energy that also determines the relative stability of the metallic and insulating phases was largely overlooked. Herein, we demonstrate an orbital-entropy dominated reversible electronic phase transition in the metastable perovskite family of correlated rare-earth nicklates (ReNiO3), in addition to their previously known MIT driven by orbital Coulomb energies. In reverse to MIT, the resistivity of ReNiO3 abruptly increases by 2-3 orders by elevating T across another critical point (TR-MIT) below TMIT, and such transition is named as reverse-metal to insulator transition (R-MIT). Combining the afterwards exponentially decreasing resistivity in the insulating phase of ReNiO3 at further temperature elevation, a distinguished delta-temperatural transport character is established, which is potentially applicable for locking the working temperatures range for electric devices. The TR-MIT is shown to be enhanced via reducing the compositional complexity and size of Re or imparting bi-axial compressive strains, and meanwhile the transition sharpness of delta-temperatural transport is reduced. Our discovery indicates that temperature range for a thermodynamically stable insulating phase of ReNiO3 is in between of TR-MIT and TMIT, while a new conductive phase with high orbital entropy is formed by further descending temperature below TR-MIT. | physics.app-ph | physics | Entropy driven reverse-metal-to-insulator transition and delta-temperatural
transports in metastable perovskites of correlated rare-earth nickelate
Jikun Chen1, Haiyang Hu1, Takeaki Yajima2, Jiaou Wang3, Binghui Ge4, Hongliang Dong5, Yong
Jiang1, Nuofu Chen6, et al
1Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials
Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
2School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-0032,
Japan
3Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of
Sciences, Beijing 100049, China
4Institute of Physical Science and Information Technology, Anhui University, 230601, Heifei,
Anhui, China
Cleveland, Ohio 44106, United States
5Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
6School of Renewable Energy, North China Electric Power University, Beijing 102206, China
Correspondence and request for materials: Prof. Jikun Chen ([email protected]). The present
manuscript is in discussion with several external expert and the author number may increase when
performing final submission.
1
Abstract:
The metal to insulator transition (MIT) in Mott-Hubbard systems is one of the
most important discoveries in condensed matter physics, and results in abrupt orbital
transitions from the insulating to metallic phases by elevating temperature across a
critical point (TMIT). Although the MIT was previously expected to be mainly driven
by the orbital Coulomb repulsion energy, the entropy contribution to the orbital free
energy that also determines the relative stability of the metallic and insulating phases
was largely overlooked. Herein, we demonstrate an orbital-entropy dominated
reversible electronic phase transition in the metastable perovskite family of correlated
rare-earth nicklates (ReNiO3), in addition to their previously known MIT driven by
orbital Coulomb energies. In reverse to MIT, the resistivity of ReNiO3 abruptly
increases by 2-3 orders by elevating T across another critical point (TR-MIT) below
TMIT, and such transition is named as reverse-metal to insulator transition (R-MIT).
Combining the afterwards exponentially decreasing resistivity in the insulating phase
of ReNiO3 at further temperature elevation, a distinguished delta-temperatural
transport character is established, which is potentially applicable for locking the
working temperatures range for electric devices. The TR-MIT is shown to be enhanced
via reducing the compositional complexity and size of Re or imparting bi-axial
compressive strains, and meanwhile the transition sharpness of delta-temperatural
transport is reduced. Our discovery indicates that temperature range for a
thermodynamically stable insulating phase of ReNiO3 is in between of TR-MIT and TMIT,
while a new conductive phase with high orbital entropy is formed by further
descending temperature below TR-MIT.
2
The discovery of new electronic phases and reversible orbital transitions among
multiple-states within electron correlated materials can enrich distinguished material
functionalities beyond conventional and promote new applications [1-6]. The past
century witnessed the development of the metal to insulator transition (MIT)
discovered in the d-band correlated systems [7-15] that promotes new applications
such as thermochromism [10], thermistor [11], electronic field effect transistors
[12-14], and neuron-spin logical devices [15]. During MIT, the orbital configurations
within Mott-Hubbard systems experience a sharp transition at a critical temperature
(TMIT) that abruptly switches the material phase between metal and insulator
(semiconductor) [7-9]. In previous investigations, the MIT mainly attributed to the
reduction in orbital Coulomb energy [4-15], while the respective variations in orbital
configuration entropy (SOrbit) were less considered as a significant contribution to the
orbital Gibb's free energy (ΔGOrbit= ΔUCoul. − TΔSOrbit). It is worth noticing that the
elevation in phonon entropy should be also an important contribution to the MIT of
vanadium dioxides when transits from the low symmetry monoclinic-insulating phase
to the high symmetry rutile- metallic phase, as previously pointed out in ref [16].
Recently, several reports in high entropy compounds highlight the importance of the
large elevation in the configuration entropy to the stability of material phases stability,
which exceeds the contribution from the enthalpy to the free energy [17]. Beyond
reasonable doubts, the synthesizing temperature can be effectively reduced for
structural ceramics via introducing the compositional complexity or enlarging the
configurational disorder. Extending an analogical consideration to electron correlated
system with complex electronic phase diagram, it sheds a light on alternative
manipulations on the relative stability among the multiple electronic phases (ΔGOrbit)
from the aspect of SOrbit, instead of UCoul., to achieve a new reversible phase transition
beyond MIT.
It is interesting to note the temperature (T) induced variations in SOrbit for the
metastable perovskite family of rare-earth nickelates (ReNiO3), which are typical
Mott-Hubbard MIT correlated system and exhibit continuously adjustable TMIT within
100-600 K via their rare-earth composition [8]. By reducing T from their conventional
metallic phase across TMIT, the ReNiO3 experience symmetry breaks form the aspects
of both structures (via Jahn-Teller distortion) and orbital degeneracy (via charge
disproportionations) [18-20]. Although the reduced symmetry is expected to abruptly
decrease the SOrbit (ΔSOrbit,M→I <0), its positive contribution (-TΔSOrbit,M→I >0) to ΔGorbit.
is smaller compared to the reduction in UCoul. (ΔUCoul.M→I <0) that dominates the
transition from metallic to insulating phase. Further cooling down is expected to
continuously descend SOrbit via
the
disproportionated t6
g (Ni4+) within the insulating phase of
ReNiO3 that gradually opens up the electronic band gap. This is evidenced by the
thermistor transportations with large magnitudes of negative temperature coefficient
of resistance (NTCR) beyond conventional semiconductors, as previously observed
extensively in the insulating phase of several ReNiO3 [11]. Noticing that this process
is more dominated by the variation in the orbital ordering rather than the orbital
configuration energy, a more significant temperature induced variations in SOrbit is
the orbital ordering
improving
2ge1
2ge0
g (Ni2+) and t6
for
3
expected, compared to the one in UCoul.. If there is another critical temperature, at
which the magnitude in the positive contribution to ΔGOrbit from the entropy aspect
(−TΔSOrbit.>0) can completely offset the reduction in UCoul,M→I, it will draw the
potential to transit ReNiO3 towards a new electronic phase with high SOrbit and low
UCoul.
In this work, we demonstrate the presence of an orbital entropy dominated
reversible electronic phase transition in the correlated perovskite family of rare-earth
nicklates with high thermodynamical metastabilities (ReNiO3: size of Re < Nd), in
addition to their MIT driven by orbital Coulomb energies. In such a transition, the
resistivity of ReNiO3 abruptly increases by 2-3 orders when elevating T across another
critical point (TR-MIT) below TMIT, the transportation of which is in reverse to MIT and
is named as reverse-metal to insulator transition (R-MIT). This discovery indicates
that temperature range for a thermodynamically stable insulating phase of ReNiO3
should be in between of TR-MIT and TMIT, while a new conductive phase with high
orbital entropy is formed by descending the temperature below TR-MIT. Noticing that
the resistivity of ReNiO3 firstly increases abruptly when elevating T across TMIT and
afterwards exponentially decreases via its reported NTCR thermistor transportations,
it establishes a distinguished character of delta-temperatural transports. By adjusting
the rare-earth compositions and imparting interfacial strains, the delta-temperatural
transports of ReNiO3 can be further regulated, and this new functionality is expected
to be used in to sense and lock the working temperatures of electronic devices.
To trigger as-proposed R-MIT driven by the contribution from Sorbit., both the
thermodynamic and kinetic aspects need to be taken into account. Thermodynamically,
it requires the insulating phase to exhibit more significant variations in Sorbit.
compared to the ones in UCoul., when reducing the temperature. In that case, it is
possible that the contribution from descending SOrbit to the GOrbit. of the insulating
phase gradually offsets the lower UCoul. of its insulating phase compared to the
metallic phase, as illustrated in Figure 1a. This is expected to be the feature for the
insulating phase of ReNiO3, noticing that their NTCR transportation is expected to be
more associated to the variation in orbital ordering rather than the orbital potentials.
Kinetically, the intrinsic metastability of ReNiO3 elevates the free energies for both its
metallic and insulating phases, the effect of which reduces the energy barrier
prohibiting the occurrence of R-MIT at TR-MIT, as illustrated in Figure 1b. In Figure 1c,
the expected orbital transitions across TMIT and TR-MIT are illustrated. The metal to
insulator transition via MIT when elevating T across TMIT reduces UCoul. and increases
SOrbit, while the one via R-MIT when reducing T across TR-MIT is expected to more
significantly enhance SOrbit compared to UCoul..
As a typical example, Figure 2a shows the temperatural dependent resistivities
(R-T) for quasi-single crystalline SmNiO3 thin films grown on single crystalline
perovskite substrates, such as LaAlO3, SrTiO3 and (La,Sr)(Al,Ta)O3, using the
chemical approach we described previously [11]. We can clearly observe as-proposed
delta temperatural transportation behaviors for all three samples, in which cases the
resistivity exponentially increases by reducing T until TR-MIT (the delta-transition point)
and afterwards abruptly reduces. The R-T tendencies measured via heating up or
4
cooling down overlaps with each other, indicating that both the R-MIT and its
resultant delta-temperature transports are reversible.
It is also worth noticing that a higher TDelta is observed for SmNiO3/LaAlO3,
compared to the ones for SmNiO3/SrTiO3 and SmNiO3/(La,Sr)(Al,Ta)O3. According
to our previous reports [11], the lattice mismatches between the film and substrate
results in various status of interfacial coherency and strains. As their cross-section
interfacial morphology demonstrated in Figure 2b, the SmNiO3 film is coherently
grown on the LaAlO3 substrate owning to a small lattice mismatch (~ 0.4%), and is
under biaxial compressive interfacial strain. This is in contrast to SmNiO3/SrTiO3 or
SmNiO3/(La,Sr)(Al,Ta)O3, in which cases the epitaxial coherency is not perservable
owning to a large lattice mismatch (~ -2.4% and -1.6%), and thereby the interfacial
strain in relaxed. The X-ray reciprocal space mapping (RSM) results for SmNiO3
grown on the various substrates are further shown in Figure S1, where the same
in-plane lattice vector is observed for SmNiO3 and LaAlO3. In contrast, the in-plane
lattice vector for SmNiO3 slightly differs to the (La,Sr)(Al,Ta)O3 that indicates a
relaxation in the tensile distortion, while the relaxation is more significant for
SmNiO3/SrTiO3. The biaxial compressive distortion is known to reduce the TMIT of
SmNiO3, which is also observed in this work as shown in Figure S2. To further
investigate their electronic structures, the near edge X-ray absorption fine structure
(NEXAF) analysis was performed to probe the relative variations in the Ni: L-edge
and O: K-edge of our samples, as shown in Figure 2c and 2d, respectively. Compared
to the strain relaxed SmNiO3/SrTiO3 or SmNiO3/(La,Sr)(Al,Ta)O3, a larger proportion
of the B proportion within the Ni: L3 spectrum is observed for the compressively
distorted SmNiO3/ LaAlO3. This indicates the elevation in the proportion of the t6
2ge1
g
(Ni3+) ground state orbital configuration compared to t6
g (Ni2+) [21,22] when
imparting the compressive distortion. A consistent variation was further observed in
their O: K-edge (Figure 2d), in which case the pre-peak (d8L) for SmNiO3/LAO
exhibits a higher intensity [21,23].
2ge2
From the above results, we can see that imparting bi-axial compressive distortion
upon SmNiO3 elevates the TR-MIT during R-MIT, which is not simply associated to the
manipulation in relative electronic phase stability in MIT as the TMIT is reduced. The
situation for biaxial tensile distorted SmNiO3, i.e. by coherently grown on SrTiO3 via
pulsed laser deposition similar to ref [24], is demonstrated in Figure S3, in which case
the tensile distortion can be stabilized via the kinetics of the plasma involved process
[24,25]. The same in-plane lattice vector is observed for the pulsed laser deposited
SmNiO3 and the SrTiO3 substrate underneath (see Figure S3a), while a coherent
interface is observed in their between (see Figure S3b). Nevertheless, no R-MIT
behavior is observed for the biaxial tensile strained SmNiO3 in the investigated
temperature down to 2 K, indicating that the TR-MIT is either eliminated or further
descended below 2K. This observation in R-MIT is analogies to the MIT of tensile
strained SmNiO3, in which case its MIT was not clearly observed [24,25].
To further regulate TR-MIT in a broader range of temperature, we adjusted the
rare-earth composition occupying the A-site of the perovskite structure, similar to the
regulations in their TMIT [8,26,27]. Reducing size of the rare-earth element results in
5
more tilted NiO6 octahedron that elevates the metastablility in their more distorted
perovskite structure, as demonstrated in Figure 3a. This was previously known to
strengthen the insulating phase at high temperature via more effectively split an
energy gap within the hybridized O2p-Ni3d orbits that elevates the TMIT [8]. It is also
worth noticing that the enhanced structural distortion for using smaller Re meanwhile
reduces the symmetry in orbital configurations and is expected to reduce the initial
SOrbit. This provides a larger thermodynamical potential to trigger the R-MIT at a
higher temperature, while the enhanced metastability is expected to kinetically reduce
the transition energy barrier.
Our expectation is confirmed by comparing the R-T results measured for ReNiO3
with various single elemental Re compositions grown on LaAlO3 substrate, as shown
in Figure 3b. By reducing size of Re from Sm towards Tm, the temperature to trigger
the R-MIT is observed to be elevated from ～50 K to ～150 K, while their TR-MIT is
more clearly compared
the
delta-temperatural transport is reduced, as indicated by their smaller variations in
resistivity (RT-Delta/R300K) and the broadening of the full width half maximum of the
delta-temperature range (TDelta-FWHM) shown in Figure 3d and 3e, respectively. It is
also interesting to note that as-achieved delta-temperatural transports is relatively
stable in magnetic field up to 10 T, as demonstrated in Figure 3f for TmNiO3/LaAlO3
(see more example in Figure S4).
in Figure 3c. Meanwhile,
the sharpness
in
Apart from single rare-earth composition ReNiO3, the perovskite nickelates with
binary and triple rare-earth compositions were also investigated to achieve a more
continuous regulation of the TR-MIT and its resultant delta-temperatural transports. It
was previously known that for regulating the MIT of rare-earth nickelates, the TMIT
for RexRe'1-xNiO3 is capable to be linearly adjusted between the TMIT of ReNiO3 and
Re'NiO3, via varying their relative composition of x [8,26]. Figure 4a shows the R-T
relation in the low temperature range for the multiple rare-earth composition
perovskite nickelates, while their TR-MIT are more clearly compared in Figure 4b with
the single rare-earth composition ReNiO3. In contrast to MIT, it is interesting to note
that as observed TR-MIT: Re,Re' for RexRe'1-xNiO3 is always below the calculated one
from the composition weighted average of TR-MIT from ReNiO3 and Re'NiO3, as
[xTR-MIT:Re+(1-x) TR-MIT:Re']. As several representative examples demonstrated in
Figure 4b, the Sm3/4Tm1/4NiO3 exhibits a lower TR-MIT compared to SmNiO3 and
TmNiO3; the Sm3/4Eu1/4NiO3 exhibits a lower TR-MIT compared to SmNiO3 and
EuNiO3; and the Sm3/4Tm1/4NiO3 exhibits a lower TR-MIT compared to SmNiO3 and
TmNiO3.
transportation behavior
These results further confirm our understanding that the R-MIT is the entropy
dominated
in conventional
Mott-Hubbard systems as dominantly driven by the orbital Coulomb energy [8]. It is
worth noticing that the difference in rare-earth composition within ReNiO3 is
expected to vary the orbital configurations in every freedom within the real space.
Therefore, the elevation in SOrbit for introducing an additional rare-earth composition
is expected to be much larger compared to the enhancement in the compositional
that differs
the MIT
to
6
S
Δ
EPC
x
1
−
)log(
1
−
x
N
)]
= −
k x
B
(1
+ −
x
[ log( )
[16].
entropy that is simply calculated as
As illustrated in Figure 4c, the elevation in SOrbit via multiple compositional Re is
expected to enhance the negative gain in the entropy contribution to ΔGOrbit within the
insulating phase of RexRe'1-xNiO3, resulting in the reduction of TR-MIT. The
RT-Delta/R300K and TDelta-FWHM for multiple rare-earth composition perovskite
nickelates are shown in Figure S5, where a reducing sharpness in delta-temperatural
transport is also observed with the elevation of TR-MIT. Although the relationship of
TR-MIT with the multiple-Re compositions is more complex than the one of TMIT, a
continuous regulation in the magnitude of TR-MIT can be still achieved. As achieved
delta-temperatural transport is expected to open up a new gate for exploring new
applications, such as more conveniently locking/excluding the working conditions of
electric devices and circuits within a narrow window of temperature.
in multiple
rare-earth composition perovskites nickelates
In summery, an additional electronic phase transition at a lower temperature and
with a reverse-temperature dependent transportation behavior compared to metal to
insulator transition is discovered within metastable perovskite family of correlated
ReNiO3 (the size of Re <Nd). We name such transition as reverse-metal to insulator
transition (R-MIT) and achieve broad regulations in its transition point (TR-MIT) via
adjusting the rare-earth composition or imparting interfacial strains. The R-MIT is
expected to be driven by the entropy contribution to the orbital free energy that
determines the relative stability between the metallic and insulating phase, and differs
to the Coulomb energy driven MIT. This is evidenced by the lower TR-MIT:Re,Re'
observed
(i.e.,
RexRe'1-xNiO3) compared to the one from the composition weighted average of TR-MIT
from ReNiO3 and Re'NiO3 as [xTR-MIT:Re+(1-x) TR-MIT:Re']. From the fundamental
aspect, the thermodynamically stable temperature range for insulating phase of
ReNiO3 is redefined as between of TR-MIT and TMIT, while further descending
temperature below TR-MIT triggers orbital re-configuration towards a a new conductive
phase with high orbital entropy. From the aspect of application, a distinguished
character of delta-temperatural transports is achieved via combining the R-MIT and
afterwards NTCR thermistor transportations of ReNiO3 by elevating the temperature
across TR-MIT. It results in a significant enhancement in the electronic resistivity within
a narrow window of temperature, and is expected to result in new applications such as
locking the working temperatures range for electric devices catering for the demand in
the fast developed automatic transmission and artificial intelligence.
Acknowledgments
This work was supported by National Natural Science Foundation of China (No.
51602022 and No. 61674013). We also acknowledge the technical support or
discussions from Prof. Akira Toriumi from the University of Tokyo and Prof. Lidong
Chen from Shanghai Institute of Ceramics Chinese Academy of Sciences.
Competing interests
We declare no competing financial interest.
7
the
(i.e.,
Additional information: Supplementary Information is available for this manuscript.
Correspondences: Correspondence should be addressed: Prof. Jikun Chen
([email protected]).
Author contributions: JC proposed the original idea, planed for the work, performed
partially
transport
characterizations), analysed the data, and write the manuscript; HH contributed in the
sample growth and transport characterizations; HD and BG contributed to the TEM
experiment; JW contributed for the EXAFS experiment; TY provides constructive
discussions; NC and YJ provide constructive support from the aspects of sample
growth and characterization, respectively.
sample growth,
experiment
structure
and
8
Figures and captions
Figure 1. (a) The temperature dependence of the Coulomb repulsion energy (UCoul.),
orbital entropy (SOrbit.) and free energy (GOrbit.) as illustrated for the insulating phase
and metallic phase of ReNiO3. By reducing the temperature across TMIT, the UCoul.
reduces more significantly for the insulating phase compared to the metallic one that
triggers the conventional metal to insulator transitions (MIT). Afterwards, the band
gap gradually opens by further reducing the temperature, and the ordering in orbital
charge of Ni2+ and Ni4+ is improved to descend SOrbit., which elevates the GOrbit. of the
insulating phase compared to the metallic one. When reaching TR-MIT, the lower UCoul.
of the insulating phase compared to the metallic phase was offset by the reduction in
SOrbit. owning to the high orbital ordering, and this thermodynamically triggers the
orbital transformation to reduce their ordering. As a result, a reversed metal to
insulating transition (R-MIT) occurs to transform ReNiO3 from the insulating phase at
to metallic phase by further reducing the temperature. (b) The material metastability
is expected to reduce the energy barrier to overcome when triggering the R-MIT. (c)
Orbital and structural transformations when the ReNiO3 transforms from the metal to
insulator (MIT) and further to metal (R-MIT) with a reducing temperature.
9
Figure 2. (a) Temperature-dependence of the material resistivity (R-T) for SmNiO3
(SNO) on the LaAlO3 (LAO), SrTiO3 (STO) and (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT)
substrates with a (001) orientation. The solid lines were measured via heating up,
while the dash lines were measured via cooling down. (b) Representative
cross-section morphologies for SmNiO3/LAO and SmNiO3/STO form the high-angle
annular dark-field (HAADF). (c)-(e) Near edge X-ray absorption fine structure
(NEXAFS) analysis of (c) Ni-L3 edge and (d) O-K edge of SmNiO3 at various states
of interfacial strains, while the respective variation in the NiO6 octahedron under
bi-axial compressive distortion is illustrated in (e).
10
Figure 3. (a) The elevation in material meta-stability for ReNiO3, compared to the
thermodynamically stable LaNiO3, with an reducing the size of the rare-earth
elements. (b) Temperature-dependence of the material resistivity (R-T) for single
rare-earth composition ReNiO3 grown on the LaAlO3 (001) substrate. The solid lines
were measured via heating up, while the dash lines were measured via cooling down.
(c) The reverse metal to insulator transition temperature (TR-MIT), (d) the maximum
resistivity at TR-MIT compared to the one at 300 K, and (e) the full widths half
maximum of its resultant delta-shaped temperature dependence in resistivity
(TDelta-FWHM) summarized from the R-T of ReNiO3. (f) Resistance of TmNiO3
measured as a function of the imparted external magnetic fields (B) at various
temperatures.
11
Figure 4. (a) Temperature-dependence of the material resistivity (R-T) for multiple
rare-earth compositional ReNiO3 grown on the LaAlO3 (001) substrate. The solid
lines were measured via heating up, while the dash lines were measured via cooling
down. (b) The reverse metal to insulator transition temperature (TR-MIT) summarized
from the R-T of multiple compositional ReNiO3. (c) Illustrating the variations in the
Coulomb repulsion energy (UCoul.), orbital entropy (SOrbit.) and free energy (GOrbit.)
when substitute the rare-earth composition in ReNiO3 by a smaller rare-earth element
(Re'). This is previously known to more distort the NiO6 octahedron that opens the
band gap and elevate TMIT. Unlike the MIT mainly driven by UCoul., the R-MIT is
expected to be triggered by the contribution from the descending SOrbit to GOrbit with
temperature that offsets the variation in UCoul. between the insulating and metallic
phases. The multiple rare-earth composition within ReNiO3 is expected to not only
enhance the compositional entropy but also largely enrich the orbital configuration
complexity that elevates SOrbit., and this further results in the reduction in TR-MIT.
12
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15
Supporting Information
Entropy driven reverse-metal-to-insulator transition and delta-temperatural transports
in metastable perovskites of correlated rare-earth nickelate
Jikun Chen1, Haiyang Hu1, Takeaki Yajima2, Jiaou Wang3, Binghui Ge4, Hongliang Dong5, Yong Jiang1,
Nuofu Chen6, et al
1Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and
Engineering, University of Science and Technology Beijing, Beijing 100083, China
2School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-0032, Japan
3Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences,
Beijing 100049, China
4Institute of Physical Science and Information Technology, Anhui University, 230601, Heifei, Anhui, China
Cleveland, Ohio 44106, United States
5Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
6School of Renewable Energy, North China Electric Power University, Beijing 102206, China
Correspondence and request for materials: Prof. Jikun Chen ([email protected])
Section A: Experimental details
Sample growth: The chemical growth of ReNiO3 includes the following three steps: (1)
The chemical precursors of Re(NO3)3 and Ni(CH3COOH)2 were mixed at the nominal
stoichiometry within ethylene glycol monomethyl ether (EGME) under ultrasonic. (2) As
made chemical solutions were spin coated onto single crystalline substrates of LaAlO3,
SrTiO3 and (LaAlO3)0.3(Sr2AlTaO6)0.7, with the (001) orientation and one side polished,
followed by baking at 175 °C to evaporate the EGME. (3) To achieve the crystallization as
perovskite ReNiO3, the samples were annealed at 800 °C within oxygen pressure of 15-20
MPa for 3 hours. The pulsed laser deposition of SmNiO3 was performed by laser ablating of a
ceramic target with nominal compositions in 20 Pa O2 pressure within a vacuum chamber.
During the deposition, the temperature of the SrTiO3 substrate was kept as 650 °C. After the
deposition process, as obtained sample was annealed within oxygen pressure of 15 MPa for 3
hours.
Characterizations: A commercialized CTA-system was used to measure the resistivity
of as-grown thin films in high temperature range within 300 K- 550 K, while using a PPMS
system from Quantum Design was used to characterize their resistance in the low temperature
range within 5 K -- 400 K and under external magnetic fields. The cross-plane and in-plane
information of as-grown films compared to the substrates were probed by using reciprocal
space mapping (RSM). The [114] reciprocal space vectors of both the film and substrate are
projected at the [110] and [001] reciprocal vectors for the in-plane and cross-plane direction,
respectively. To characterize the cross-plane morphology of as-grown thin films, the
high-angle annular dark-field (HAADF) and annular bright-field (ABF) scanning
transmission electron microscopy (STEM) was performed on JEM-ARM 200F TEM operated
at 200 kV with a cold field emission gun and aberration correctors for both probe-forming and
imaging lenses. To characterize the electrical orbital structures, we performed the near edge
X-ray absorption fine structure (NEXAFS) at Beijing Synchrotron Radiation Facility, Institute
of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China.
Section B: Additional results
Figure S1. The X-ray reciprocal space mapping of SmNiO3 (SNO) grown on single
crystalline perovskite structured substrates, such as LaAlO3 (LAO), SrTiO3 (STO) and
(LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) with (001) orientation via the chemical approach reported
previously. The reciprocal vector of (114) is used to probe the diffraction patterns from both
the thin film and the substrate.
Figure S2. The temperature dependence in resistivity for SmNiO3/LaAlO3, SmNiO3/SrTiO3,
and SmNiO3/(La,Sr)(Al,Ta)O3, measured via heating up (solid lines) and cooling down (dash
lines). A lower metal to insulator transition temperature (TMIT) is observed for the bi-axial
distorted SmNiO3/(La,Sr)(Al,Ta)O3, compared
tensile strain relaxed
SmNiO3/SrTiO3, and SmNiO3/(La,Sr)(Al,Ta)O3. These observations are in agreement to the
previous reports on strain distorted SmNiO3.
the partially
to
Figure S3. (a) The X-ray reciprocal space mapping of SmNiO3 (SNO) grown on single
crystalline SrTiO3 (STO) with (001) orientation via pulsed laser deposition. The reciprocal
vector of (114) is used to probe the diffraction patterns from both the thin film and the
substrate. (b) The interfacial morphology of as-grown SmNiO3 /SrTiO3 from the high-angle
annular dark-field (HAADF) images. (c) Temperature dependence of the resistivity and (d)
Temperature coefficients of resistance (TCR) for as-grown SmNiO3/SrTiO3.
Figure S4. Resistance of YNiO3 measured as a function of the imparted external magnetic
fields (B) at various temperatures.
Figure S5. (a) The maximum resistivity at TR-MIT compared to the one at 300 K, and (b) the
full widths half maximum of its resultant delta-shaped temperature dependence in resistivity
(TDelta-FWHM) summarized from the R-T of multiple rare-earth composition perovskite
nickelates shown in Figure 4a.
|
1711.03563 | 1 | 1711 | 2017-11-09T19:14:16 | Rapid characterization of wafer-scale 2D material: Epitaxial graphene and graphene nanoribbons on SiC | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | We demonstrate that the confocal laser scanning microscopy (CLSM) provides a non-destructive, highly-efficient characterization method for large-area epitaxial graphene and graphene nanostructures on SiC substrates, which can be applied in ambient air without sample preparation and is insusceptible to surface charging or surface contamination. Based on the variation of reflected intensity from regions covered by interfacial layer, single layer, bilayer, or few layer graphene, and through the correlation to the results from Raman spectroscopy and SPM, CLSM images with a high resolution (around 150 nm) reveal that the intensity contrast has distinct feature for undergrown graphene (mixing of dense, parallel graphene nanoribbons and interfacial layer), continuous graphene, and overgrown graphene. Moreover, CLSM has a real acquisition time hundreds of times faster per unit area than the supplementary characterization methods. We believe that the confocal laser scanning microscope will be an indispensable tool for mass-produced epitaxial graphene or applicable 2D materials. | physics.app-ph | physics | Rapid characterization of wafer-scale 2D material:
Epitaxial graphene and graphene nanoribbons on SiC
1
Vishal Panchal*1,2, Yanfei Yang*1,3, Guangjun Cheng1, Jiuning Hu1, Chieh-I Liu1,4, Albert F.
Rigosi1, Christos Melios2,5, Olga Kazakova2, Angela R. Hight Walker1, David B. Newell1, and
Randolph E. Elmquist*1
1 National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
2 National Physical Laboratory, Hampton Road, Teddington, TW11 0LW, UK
3 Joint Quantum Institute, University of Maryland, College Park, MD 20742, USA
4 National Taiwan University, Taipei, 10617, Taiwan
5 Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, UK
ABSTRACT: We demonstrate that the confocal laser scanning microscopy (CLSM) provides a
non-destructive, highly-efficient characterization method for large-area epitaxial graphene and
graphene nanostructures on SiC substrates, which can be applied in ambient air without sample
preparation and is insusceptible to surface charging or surface contamination. Based on the
variation of reflected intensity from regions covered by interfacial layer, single layer, bilayer, or
few layer graphene, and through the correlation to the results from Raman spectroscopy and SPM,
CLSM images with a high resolution (≈ 150 nm) reveal that the intensity contrast has distinct
feature for undergrown graphene (mixing of dense, parallel graphene nanoribbons and interfacial
layer), continuous graphene, and overgrown graphene. Moreover, CLSM has areal acquisition time
hundreds of times faster per unit area than the supplementary characterization methods. We believe
that the confocal laser scanning microscope will be an indispensable tool for mass-produced
epitaxial graphene or applicable 2D materials.
2
Wafer-scale graphene material is of strong interest for quantum Hall resistance standards1-5
and future nanoelectronics6,7, such as high frequency electronics8-15 and photonics16,17. The high
uniformity of single-domain epitaxial graphene (EG) grown on the silicon face of SiC(0001)18
presents several advantages, such as the lack of a need to transfer the graphene onto an insulating
substrate for device processing, as is the case with chemical vapor deposition (CVD) growth.
Recent progress5,19,20 in EG has demonstrated the potential for mass production of homogeneous
EG at the wafer-scale, naturally leading to a demand for a characterization method that is fast,
accurate and accessible. Currently, Raman spectroscopy and scanning probe microscopies (SPM)
including atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM) are the
most widely used methods of characterizing EG quality. Raman spectroscopy is a fast and non-
destructive tool to identify monolayer graphene, whose fingerprint in the Raman spectrum is a
symmetric G' peak (2D band) at ~2700 cm-1 that can be fitted by a single Lorentzian21. While the
shape of G' peak evolves quickly with increased number of layer, careful analysis of G'(2D) band
is required to identify bilayer and thicker graphene. Moreover, Raman spectra are sensitive to the
doping level and strain in EG22-28. Topography imaged by AFM shows the SiC terrace
morphology, which develops concurrently with the EG and thus has a strong influence on the layer
growth and uniformity5,29. The identification of EG domains from their thickness is far from
straight-forward using AFM alone30. Recently, KPFM has been shown to be a reliable method for
distinguishing the layer number up to several layers31. However, Raman and SPM methods are
time consuming and are suitable only for sampling in nanoelectronics applications over regions of
tens of micrometers. More universal electronics applications require fast and accurate
characterization of graphene structures at the wafer scale while at the same time retaining sub-
micrometer scale spatial resolution. Prior to our work, transmitted optical microscopy has been
demonstrated by Yager et al.32 for rapid identification of layer-number inhomogeneity in graphene
3
over hundred-micrometer scales.
In this report, we demonstrate that confocal laser scanning microscopy (CLSM) using reflected
optical light is a superior tool for characterization of large-area epitaxial graphene and graphene
nanostructures grown on SiC, compared to conventional optical microscope, Raman spectroscopy,
AFM, conductive atomic force microscopy (C-AFM), KPFM, and scanning electron microscope
(SEM) methods. CLSM has a lateral resolution that is pushed beyond the optical diffraction limit
and depth-of-field is improved with stacking of images at different focal planes, allowing high
resolution over larger imaging areas. We first describe the experiment setup of CLSM, SPM, and
Raman spectroscopy. Then we discuss the CLSM imaging results, which show the distinct
intensity contrast for undergrown, continuous, and overgrown EG, through the correlation to
Raman spectroscopy and SPM.
RESULTS
Samples for this study were processed in a graphite-lined resistive-element furnace in Ar
background near atmospheric pressure3. Graphene can be grown with close to monolayer thickness
on the Si-face of semi-insulating 4H-SiC substrates with the SiC(0001) side facing down toward
a polished glassy graphite disk. This method has been often referred as FTG (facing-to-graphite)
growth in our previous publications3-5. Before being loaded into the furnace, the SiC substrate is
immersed in buffered HF (< 10 %) for one minute. We adopt a two-stage annealing process, which
pre-treats the samples at 1050 °C in forming gas (4 % H2 + 96 % Ar) for two hours, and then grows
graphene at 1900 °C in high purity Ar for less than 10 minutes.
1. Epitaxial graphene nanoribbons
a. Optical (50x), reflective
b. Optical (150x), reflective
c. Optical (150x), transmitted
40 µm
5 µm
5 µm
d. Optical (150x), reflective, DIC e. CLSM (50x), reflective
f. AFM
1LG
5 µm
5 µm
FLG
5 µm
g. CLSM (50x), reflective
h. Raman
i. Raman
1LG
5 µm
FLG
5 µm
4
Figure 1. Epitaxial graphene nanoribbons on SiC. (a) Optical image taken with reflective
illumination and a 50× objective. (b) Optical image of the area in the upper red box in (a) taken
with reflective illumination using a 150× objective. (c) Optical image of the same area as in (b)
taken with transmitted light and a 150× objective. (d) Reflective DIC image of the same area as in
(b) taken with a 150× objective. (e) CLSM image of the same area as in (b) taken with a 50x
objective. (f) AFM phase (top panel) and topography (bottom panel) images of the upper portion
of (b). (g) CLSM image of the same area as in the lower red box in (a). (h) Mapping of the
integrated G'(2D) peak area in the Raman spectra of the same area as in (g). (i) G'(2D) peaks of
point A (IFL or SiC), point B (graphene ribbons), and point C (step edge) in (g).
255026002650270027502800285029002950 a. u. WN (cm-1) IFL/SiC 1LG Fitting for 1LG FLG 5
The first four optical images in Figure 1 (a-d) are obtained by a conventional Nikon Eclipse
L200N optical microscope [see Notes] fitted with both reflective and transmitted white light
illumination, as well as a differential interference contrast (DIC) slider. Figure 1a shows the optical
image of a large area (288 µm × 192 µm) on a sample with partial coverage of graphene, obtained
with reflective illumination. Part of the fiducial mark "M0" that is etched ≈ 600 nm deep in the
SiC substrate can be seen at the bottom. Figure 1b is the magnified reflective image of the area
indicated by the upper red box in Fig. 1a, which reveals that the brighter regions contain a dense
2D forest of nanoribbons that are not fully resolved. Note that Fig. 1b (as well as Figs. 1c,1d,1f,1g)
is a cropped region for the convenience of comparison with other corresponding images in Fig. 1.
Figure 1c shows the image of the same area as Fig. 1b obtained with transmitted illumination.
The darker regions in Fig. 1c indicate the formation of monolayer graphene, which absorbs
approximately 2.3% of the incident light33. The brighter regions are insulating IFL or bare SiC, as
verified later with C-AFM in Fig. 2. With the DIC technique, we obtain a 3D vision of the terraces
on the SiC surface formed during the high temperature annealing (Fig. 1d), with a trade-off for the
nanoribbon contrast. From Fig. 1b-1d, we can see that the nanoribbons preferentially grow from
the step edge towards the adjacent upper terrace. The formation of parallel nanoribbons on
SiC(0001) terraces has been attributed to diffusion-limited growth34 that may accompany the
decomposition of single SiC atomic layers.
Fig. 1e is the CLSM image of the same area as in Fig. 1b, which possesses greatly enhanced
lateral resolution and contrast through the point illumination from a laser source and by removal
of the out-of-focus background light with a pinhole at the conjugate focus plane in front of the
sensor. Compared to the conventional optical image in Fig. 1b, the CLSM image not only shows
a much higher special resolution, but also clearly reveals thin stripes (labeled by red arrows) and
6
patches of higher reflectivity along the step edges, indicating FLG. While the AFM phase image
in Fig. 1f (upper panel) reveals comparable and higher resolution for the 2D nanoribbon forest, it
mostly fails to distinguish the thin stripes and patches of thicker graphene layers along the step
edge (neither feature can be distinguished from the AFM height image in the lower panel).
Moreover, the acquisition time for a CLSM image (only 10 seconds for Fig. 1f using manual
mode), is hundreds of times faster than that for a typical AFM image (15 minutes for Fig. 1e).
Raman spectra for the same region as in the lower red box in Fig. 1a were collected (in about
1.5 hours) to create a map of the integrated G'(2D) peak (Fig. 1h), that clearly shows the area that
is covered by graphene. However, due to the relatively large laser spot size (≈ 1 μm), it cannot
distinguish individual nanoribbons. Representative Raman spectra from points A, B and C,
indicated by the red circles in Fig. 1g, are shown in Fig. 1i. There is no G'(2D) signal for the dark
region (IFL/SiC) indicated by point A. The G'(2D) spectrum at point B shows a symmetric peak
centered around 2750 cm-1, which can be fitted by a single Lorentzian (dashed blue line in Fig. 1i)
with a FWHM of ≈ 35 cm-1, indicating that the ribbons are monolayer graphene5,35. The G'(2D)
peak of point C, which has a higher brightness than the ribbons, is significantly broadened with a
clear shoulder (red line in Fig. 1i), indicative of multilayer or strained graphene35,36.
Figure 2a is a map of the current channel obtained by C-AFM on a similar sample as
characterized in Fig. 1, with incomplete coverage of graphene. The CLSM image (Fig. 2b) of the
same region shows comparable resolution as the current map in Fig. 2a. To remove contamination
that interferes with C-AFM, we applied mechanical cleaning over the graphene surface by
scanning the sample with a stiff (~3 Nm-1) AFM probe in contact mode. During the cleaning
process, some of the graphene nanoribbons had been damaged and thus were electrically isolated
from the rest of the network of graphene nanoribbons. These nanoribbons showed a distinct lack
7
of current in the C-AFM map (see top right box in Fig 2a), but existed in the CLSM image of the
same area taken after the cleaning process (see top right box in Fig. 2b). Obviously, CLSM has
the advantage of being a non-invasive method for the characterization of the graphene ribbons on
a SiC substrate. Furthermore, the current variation (color variation) in Fig. 1a does not represent
different conductivity, but is due to the differences in the connection paths to the conductive AFM
tip. As the result, while C-AFM confirms the conductivity of the graphene ribbons, as shown in
Fig. 2a, it could not distinguish between the single-layer graphene nanoribbons and the multilayer
graphene along the step edges, which is clearly revealed by CLSM imaging.
Figure 2. Single-layer carbon nanoribbon forest and multilayer carbon nanoribbons on SiC. (a)
Map of conductivity of a region with incomplete coverage of graphene obtained by C-AFM (45
µm by 45 µm). (b) CLSM image of the same area as in (a). (c) 3D-display of the same area created
by overlapping the current map and the height map obtained by C-AFM. (d)-(f) AFM topography
(d), surface potential (e), and CLSM images (f) of the area indicated by the box near the center of
the image in (a).
8
Figure 2c is a 3D image produced by overlapping the current channel with the height channel
from the C-AFM scanning, again showing that the majority of graphene nanoribbons grow from
the step edge to the upper steps. High-resolution AFM scanning reveals that the graphene
nanoribbons are about 260 pm below the terrace surface (Fig. 2d), close to the thickness of one
layer of hexagonal SiC. Figure 2e and 2f are surface potential and CLSM images, respectively, of
the small region within the box near the center of the image in Fig. 2b, showing graphene
nanoribbons of widths ≈100 nm.
The parallel graphene nanoribbons shown above are observed in EG samples produced by FTG
growth (Fig. S1a), when the process temperature is not high enough or the process time is not long
enough to produce full graphene coverage. Therefore, the dense 2D graphene nanoribbon forest
along with its conspicuous optical contrast to the IFL patches is a very strong evidence of
incomplete EG coverage and can be used alone for quick material assessment. The graphene
nanoribbons will merge to form continuous graphene in a succeeding growth (Fig. S1), and the
CLSM contrast features will evolve accordingly.
2. Overgrown epitaxial graphene
Next, we investigate EG samples with full coverage of graphene by comparing CLSM to
KPFM results. The full coverage of graphene was produced by growth for ≈207 s at 1900 °C.
Figure 3a is the CLSM intensity image showing a sample region predominantly covered by 1LG
and having roughly 10 % coverage of 2LG and 3 LG domains as narrow patches (bright contrast
in Figure 3a). Figure 3b is the CLSM image of the 15 μm by 15 μm area indicated by the red box
in Fig. 3a, taken with 8x digital zoom. Comparing Fig. 3b to the surface potential map (Fig. 3c) of
the same region confirms the designation of 1LG, 2LG, and 3LG. The higher reflective intensity
from thicker graphene layer in the CLSM image is consistent with the linear increase of reflectivity
reported by Ivanov et al. through monitoring the power of the reflected laser beam from EG
samples on SiC37. Some dark lines and patches in Fig. 3b indicated by the red arrows are missing
in the KPFM image due to the proximity effect of the charge potential, but are confirmed to be
insulating buffer layer by the C-AFM, as shown in Fig. 3d.
9
Figure 3. Large areas of monolayer EG with condensed bi- and tri-layer patches. CLSM image
taken with (a) 100x and (b) 100x objectives with 8x digital zoom-in for the area indicated in (a).
(c) Surface potential map of the same area as in (b) obtained by KPFM. (d) Current map of the
same area as in (b) obtained by C-AFM.
3. Insusceptibility to surface charging
10
In Fig. 4, we further compared the CLSM images to SEM images for the two types of samples
that have been shown in Figs. 1, 2 and 3. The SEM images were obtained in a vacuum chamber
using the in-lens detector to capture backscattered electrons with beam energy less than 1 kV.
Figures 4a and 4b are the CLSM and SEM images, respectively, of the same region from a
graphene nanoribbon sample. The graphene regions appear brighter in the CLSM image (Figs. 4a
and 4c), whereas the graphene appears darker in the SEM images (Figs. 4b and 4d). The inverted
contrast can be explained by the higher work function of the graphene nanoribbons than that of the
IFL or SiC, which leads to a stronger suppression of the backscattered electrons from the sample
surface and therefore lower electron intensity sensed by the in-lens detector. Initially this appears
to be inconsistent to the KPFM image (Fig. 3d), which suggests thicker layers of graphene have a
lower work function, as the work function of the sample is given by Φsample = Φprobe – eΔVCPD,
where Φprobe is the work function of the probe31. However, as the KPFM image is obtained in
ambient air (vs. vacuum for SEM), the atmospheric doping is likely to have a significant effect on
the work function of graphene. If KPFM had been performed in vacuum as with SEM, the work
function would be consistent, as demonstrated by Panchal et al.39, where an inversion in the surface
potential contrast was observed when placing the sample in vacuum.
Similarly, the SEM image of the overgrown sample (Fig. 4d) also has an inverted contrast
compared to the corresponding CLSM image in Fig. 4c, since the work function of the multilayer
patches is higher than the monolayer graphene, as indicated by the surface potential map obtained
from KPFM in Fig. 3d. The lower resolution of Fig. 4d compared to Fig. 4b is most likely due to
the screening effect from the continuous, conducting 1LG layer on top of the thicker layers. During
the SEM scanning, the graphene surface becomes heavily charged and is also exposed to
hydrocarbon contamination, both causing deterioration of the image resolution. On the contrary,
no degradation of the CLSM image is observed after surface charging by electron beam, i.e., after
11
SEM imaging.
Figure 4. CLSM compared to SEM for EG on SiC. (a) CLSM image of the graphene ribbons on
SiC. (b) SEM image of the same region as in (a). (c) CLSM image of multilayer graphene with
uniform monolayer background. (d) SEM image of the same region as in (c).
DISCUSSION
12
In this paper, we have demonstrated fast and nondestructive characterization of epitaxial
graphene by confocal laser scanning microscopy, which produces optical intensity images in
ambient air, without any prior sample preparation, showing distinct features for incomplete,
continuous, and overgrown graphene on SiC substrate. By analyzing the edge spread function, we
estimate that the lateral resolution of our CLSM EG images is approximately 150 nm (Fig. S2 and
S3), though it may be somewhat higher or lower under various imaging conditions, instrument
settings and reflectivity of the sample. The measured reflected intensity from 1LG is ≈ 3% higher
than that from adjacent IFL regions and the reflected intensity from 2LG is ≈ 2% higher than that
from the 1LG (see note in Supplementary Information). Through the correlation to the results from
Raman spectroscopy, SEM, and scanning probe microscope including AFM, C-AFM, KPFM, the
CLSM images reveal that epitaxial graphene starts to develop from the edge of SiC terraces as
parallel graphene nanoribbons. It then merges into a continuous, uniform monolayer graphene
under proper processing conditions.
Micrometer-sized bilayer and few layer graphene patches are found as high contrast region in
the CLSM images of overgrown samples. Compared to the supplementary methods used in this
paper, CLSM not only has a much higher throughput for detecting such regions, it is also
insusceptible to surface contamination or surface charging, which will strongly affect the
resolution and even the contrast of KPFM or SEM images. Although Raman spectroscope also
has advantages as an optical non-intrusive method, it suffers a much lower lateral resolution.
We propose that high resolution CLSM images can provide inspection of wafer-scale EG,
selection of material and locations for more efficient fabrication (Fig. S5 and S6), as well as
analysis of device quality and failure modes (Fig. S7). CLSM will be particular valuable for
characterization of 2D materials, which have atomic thickness and are susceptible to surface
13
contamination or surface charging, but have different reflectivity.
METHODS
The confocal laser scanning microscopy was performed using an Olympus LEXT OLS4100
system [see Notes] fitted with 5×, 10×, 20×, 50× and 100× objectives (numerical apertures: 0.15, 0.30,
0.60, 0.95 and 0.95, respectively) and with further 1× to 8× optical zoom. This enables the CLSM
to image areas with field of view ranging from 2,560 μm to 16 μm, which translates to total
magnification range from 108× to 17,280×. The system employs a 405 nm wavelength violet
semiconductor laser, which is scanned in the X-Y directions by an electromagnetic MEMS scanner
and a high-precision galvano mirror, and a photomultiplier to capture the reflected light and
generate images up to 4096 × 4096 pixels with horizontal spatial resolution ≈ 150 nm
(supplementary). The confocal optical setup only allows the reflected light that is in-focus to pass
through the circular confocal pinhole, thus eliminating flare from out-of-focus regions, but
resulting in a very shallow depth of field. To increase the focus resolving capability, a series of
images along Z-axis are taken around the median focus height, with separations as small as 60 nm.
For each pixel, an ideal Intensity-Z curve is calculated to fit the intensities in these images and
extract the maximum value, which in turn is used to create a final 2D intensity image. The system
is operated in ambient air and does not require any sample preparation for clean samples.
Tapping-mode atomic force microscopy (AFM) was performed in air using a Bruker
Dimension FastScan SPM.[see Notes] In this mode, the probe tip oscillates at its fundamental
resonance (f0) and a feedback loop tracks the surface of the sample by adjusting the Z-piezo height
to maintain a constant amplitude of the cantilever oscillation. The phase of the cantilever
oscillation is also compared to the sine wave driving the cantilever oscillation, and thus, AFM
14
achieves simultaneous mapping of the topography and tapping phase which is a measure of the
energy dissipation between the probe and sample, thus encompassing variations in adhesion,
composition, friction, viscoelasticity and other mechanical properties of the sample38.
Conductive atomic force microscopy was performed using a Bruker Dimension Icon SPM [see
Notes] by raster scanning a Pt/Ir coated probe across the sample surface. The C-AFM scans were
performed with 250 mV bias voltage applied to the sample and the resulting current flowing
through the probe at each pixel of the scan area was measured by a current amplifier. Epitaxial
graphene's high electrical conductivity and good adhesion allow precise mapping of one layer
graphene (1LG) or thicker few-layer graphene (FLG) structures by C-AFM unless they are isolated
by non-conducting SiC or interfacial layer (IFL) carbon.
Kelvin probe force microscopy (KPFM) was performed by means of frequency modulation
(FM) using a Bruker Dimension Icon SPM [see Notes]. During FM-KPFM, the surface of the sample
is tracked and measured using the AFM feedback method described above. Additionally, a low
frequency (fmod), AC voltage (VAC) is applied to the electrically conductive probe, which shifts the
cantilever resonance due to the electrostatic attraction/repulsion and thus produces side lobes at f0
± fmod. When the FM-KPFM feedback loop applies an additional DC voltage to the probe (VDC),
the amplitude of the side lobes is proportional to the difference between VDC and the surface
potential of the sample (also referred to as the contact potential difference, VCPD). The surface
potential is determined by the VDC minimizing the side lobes, i.e., when potential of the probe is
equal to the potential of the sample. The surface potential map is obtained by recording VDC pixel
by pixel. The surface potential values of the sample can be converted to a work function using,
Φsample = Φprobe – eΔVCPD, provided the work function of the probe (Φprobe) is known. For further
details see Ref. [39].
15
Raman spectra were acquired under ambient conditions with a 514.5 nm (2.41 eV) excitation
(Renishaw InVia) [see Notes] which is focused to an approximately 1 μm spot on the samples through
a 50× objective. Raman mapping measurements were performed by raster scanning an area of 28
μm by 20 μm with a step size of 2 μm and collecting the Raman G'(2D) peak region with an
exposure time of ≈ 10 s for each point. Raman maps were generated by integrating the area of the
Raman G'(2D) peak collected at each point.
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Acknowledgement
A.F.R would like to thank the National Research Council's Research Associateship Program for
the opportunity. The work of C.-I.L at NIST was made possible by arrangement with Prof. C.-T.
Liang of National Taiwan University. We would like to thank Dr. Darwin Reyes-Hernandez for
beneficial discussion about confocal microscope.
Author Contributions
V.P., Y.Y. and R.E.E. conceived and designed the experiments. V.P., Y.Y., G.C., J.H., C.-I.L., and
R.E.E performed the experiments. Y.Y. and R.E.E. produced the samples. Y.Y. and C.-I.L.
fabricated the devices. Y.Y. and V.P. performed image processing and data analysis. The
manuscript was written through contributions of all authors.
20
Competing financial interest
The authors declare no competing financial interest.
Materials & Correspondence
*Yanfei Yang, Email: [email protected]
*Vishal Panchal, Email: [email protected]
*Randolph E. Elmquist, Email: [email protected]
Additional Information
Supplementary Information is available and includes (1) Evolvement of the optical contrast
features from incomplete EG to continuous EG; (2) Estimation of lateral resolution for CLSM
image; (3) Large area EG characterization by CLSM image stitching; (4) Notes on the reflected
intensity from IFL, 1LG and 2LG; (5) Device inspection by CLSM.
Funding Sources: Work done by Y.Y. was supported by federal grant #70NANB12H185. Work
done by V.P. at NIST and NPL was supported by federal grant and EC grant Graphene Flagship
(No. CNECT-ICT-604391) respectively.
Notes: Commercial equipment, instruments, and materials are identified in this paper in order to
specify the experimental procedure adequately. Such identification is not intended to imply
recommendation or endorsement by the National Institute of Standards and Technology or the
United States government, nor is it intended to imply that the materials or equipment identified are
necessarily the best available for the purpose. The authors declare no competing financial interest.
Supplementary Information:
21
Rapid characterization of wafer-scale 2D material:
Epitaxial graphene and graphene nanoribbons on SiC
Vishal Panchal*1,2, Yanfei Yang*1,3, Guangjun Cheng1, Jiuning Hu1, Chieh-I Liu1,4, Albert F.
Rigosi1, Christos Melios2,5, Olga Kazakova2, Angela R. Hight Walker1, David B. Newell1, and
Randolph E. Elmquist*1
1 National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
2 National Physical Laboratory, Hampton Road, Teddington, TW11 0LW, UK
3 Joint Quantum Institute, University of Maryland, College Park, MD 20742, USA
4 National Taiwan University, Taipei, 10617, Taiwan
5 Advanced Technology Institute, University of Surrey, Guildford, Surrey, GU2 7XH, UK
Contents
1. Evolvement of the optical contrast features from incomplete EG to continuous EG
2. Estimation of lateral resolution for CLSM image
3. Large area EG characterization by CLSM image stitching
4. Notes on the reflected intensity from IFL, 1LG and 2LG
5. Device inspection by CLSM
22
1. Evolvement of the optical contrast features from incomplete EG to continuous EG
Figure S1(a) is a reflective optical image of a FTG sample obtained by Nikon Eclipse L200N
with a 50 x objective, showing incomplete single layer graphene (1LG) coverage. The graphene
nanoribbons merged into continuous graphene in a succeeding growth, as shown in Fig. S1b. The
conspicuous contrast from the interfacial layer regions (the darker contrast in Fig. S1a) disappeared
in Fig. S1b. Instead, only narrow lines of higher brightness are seen after the second growth along
the step edges, indicating few layer graphene, as confirmed by Raman spectroscopy. Figure S1c
and S1d are cropped from Fig. S1a and S1b, respectively, showing the same region where a Raman
map (Fig. S1e) has been generated after the second growth. The spectrum from a spot on the
terrace, marked by a green circle in Fig. S1e, show a symmetric G'(2D) peak (the green curve in
Fig. S1f) that can be fit by a single Lorentzian (the black dashed line in Fig. S1f), confirming the
existence of 1LG. The spectrum from the spot at the step edge, marked by a red circle in Fig. S1e,
shows a much wider asymmetric G'(2D) peak (the red curve in Fig. S1f), indicating few layer
graphene.
23
Figure S1. (a) Conventional reflective optical image of a FTG sample with partial graphene
coverage. (b) Conventional reflective optical image of the same sample after a succeeding growth
showing continuous background with narrow lines of higher brightness. (c) (d) Cropped images of
24
the region marked by the black boxes in (a), (b) respectively. (e) Raman map of the same region
as in (d) after the second growth. (f) Raman spectra from the spots marked by green and blue
circles in (e), respectively. The black dot line is the Lorentzian fitting of the green curve.
2. Estimation of lateral resolution for CLSM image
Figure S2 shows the analysis of the same CLSM image as in Fig. 4a by a public image
processing program ImageJ. The red curve in Fig. S2b is the averaged profile crossing the graphene
nanoribbons marked by the red rectangular box, compared to the averaged profile (blue curve)
from the same region of the SEM image in Fig. 4b. For the nineteen dips clearly seen from the
SEM profile, seventeen corresponding peaks (counted from right) can be distinguished from the
CLSM profile for the graphene nanoribbons with width varying approximately from 120 nm to
230 nm.
We further estimated the lateral resolution of the CLSM image in Fig. S2a by analyzing the
edge spread function (ESF). The blue points in Fig. S2c and S2d are the averaged profile across
the edges marked by two green rectangular boxes in Fig. S2a. An integrated Gauss function is used
to fit the averaged profile, with the high plateau on the left defined as 100% brightness and the low
plateau on the right defined as 0% brightness. The lateral resolution is estimated by calculating the
edge width between two reference points with 20% and 80% of brightness (Fit 20/80). The inset
label in Fig. S2c and S4d shows that the lateral resolution is approximately 149 nm and 161 nm
for the left and right edges marked by the green boxes in Fig. S2a, respectively.
The lateral resolution will be affected by factors such as the contrast level and materials, and
therefore varies from sample to sample, or from region to region on the same sample. Figure S3
shows the CLSM image taken with a 50x objective and 8x digital zoom. The lateral resolution
values estimated from the "fit 20/80" of ESF for the denoted edges are listed in the table on the
right, varying from approximately 97.3 nm to 185.8 nm. Based on analysis of more than 10 CLSM
images from different samples, we estimate that the lateral resolution of our CLSM images is
25
approximately 150 nm.
Figure S2. Analysis of the lateral resolution of the CLSM EG images by ImageJ. (a) CLSM of
incomplete graphene on SiC (same image in Fig. 4a). (b) averaged profile for the red rectangular
box in (a). (c) Gauss simulation (green line) of the edge indicated by the green rectangular in (a)
on the left. (d) Gauss simulation (green line) of the contrast edge indicated by the green rectangular
in (d) on the right.
26
Figure S3. Left: CLSM image of a EG sample covered by dominant single layer graphene (1LG).
The lowest brightness indicates IFL region. Higher brightness corresponds to thicker graphene
layer. Right: A table with edge width calculated from "Fit 20/80" algorithm.
3. Notes on the reflected intensity from IFL, 1LG and 2LG
We have found that the sharpness level (Fig. S4) in the advanced settings for the CLSM will
strongly affect the reflected intensity due to the backstage algorithm. As suggested by the Olympus
specialist, we turned off the contrast and sharpness when we estimate the ratio of reflected intensity
from IFL, 1LG and 2LG. We have universally observed that the reflected intensity from 1LG is ≈
3 % higher than that from IFL region, and the reflected intensity from 2LG is ≈ 2 % higher than
that from 2LG.
27
Figure S4. CLSM advanced setting used for estimation of the change of reflected intensity from
IFL, 1LG and 2LG.
4. Large area EG characterization by CLSM image stitching
Since the graphene nanoribbons as well as the 2LG and FLG patches are usually submicron
sized, a single CLSM scan by objective 20X and higher magnification cannot distinguish such
features properly and are not suitable for the characterization of EG region larger than hundreds
of micrometers. Wafer-scale EG can be characterized by stitching arrays of CLSM images scanned
by 50x or 100x objective as shown in Fig. S5 and Fig. S6.
Figure S5a shows a high resolution CLSM image (produced from 64 CLSM scans by digital
stitching) of a homogeneous monolayer graphene area (463 µm by 463 µm) that includes less than
1% of multilayer graphene (the irregular brighter patches). Figures S5b,c,d are the three zoomed-
in grid CLSM images for locations marked by red boxes 1,2, and 3 in Fig. S5a. Hall bar devices
of 400 µm width fabricated from such graphene can maintain the quantum Hall effect with precise
metrological accuracy up to 4 K.
28
Figure S5. (a) Stitched CLSM image of a highly uniform area of monolayer graphene with only
few bilayer patches as shown in the right panels. (b) Zoom-in of the region indicated by the red
box 1 in (a). (c) Zoom-in of the region indicated by the red box 2 in (a). (d) Zoom-in of the region
indicated by the red box 3 in (a).
Fig. S6 shows a composite image produced in ≈ 20 minutes from 16 CSLM scans by digital
stitching. The black strip that appears in the lower region of this image is the edge of the sample.
The fiducial mark (V20) is used for sample identification, and is etched into the SiC before EG is
grown. FTG growth usually produce very thick graphene layers (Ref. 5) close to the edge of the
sample (region 3 with much higher brightness in Fig. S6). About few hundreds of micrometers
away from the edge, bilayer and few layer patches decrease dramatically in region 2. Continuous
EG with less than 1% of bilayer or few layer patches in region 1 is suitable for fabrication of
29
quantum Hall resistance standards (Ref. 5).
Figure S6. Stitched CLSM image of an area near the edge of a primarily monolayer EG sample,
where thicker graphene patches (bright contrast) can only be seen near the edge. Region 1 is
covered by uniform and continuous 1LG. Region 2 shows increasing bilayer and few layer patches
(with higher brightness). Region 3 is covered by very thick graphene.
5. Device inspection by CLSM
30
Charge carrier mobility of graphene is an important electronic property that is usually
measured through Hall effect. However, the mobility of epitaxial graphene is strongly affected
by its carrier density. To compare the quality of two graphene devices, one needs to compare the
curves of mobility as a function of carrier density obtained at low temperature, as shown in
Figure S3. Here we correlate the mobility characteristic curves to the CLSM images of
corresponding devices. The CLSM image (left inset in Fig. S3) of the high mobility device (red
data in Fig. S3) shows almost complete graphene coverage with less than 10% of bilayer or
interfacial layer inclusions. The CLSM image (right inset in Fig. S3) of the low mobility device
(black data in Fig. S3) shows large portion of interfacial layer.
Figure S7. Mobility of EG devices as a function of carrier density. The overall mobility of a more
uniform sample (data shown in red, CLSM image in left inset) is much higher than that of another
device (data shown in black, CLSM image in right inset) made from graphene area with incomplete
graphene and nanoribbons.
|
1809.10754 | 2 | 1809 | 2018-11-15T23:06:05 | Enabling III-V-based optoelectronics with low-cost dynamic hydride vapor phase epitaxy | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials have improved performance compared to silicon, but currently they are relegated to applications in high-value or niche markets due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis using hydride vapor phase epitaxy that has the potential to lower III-V semiconductor deposition costs by orders of magnitude while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market. The emergence of a low-cost III-V deposition technique will enable III-V electronic and opto-electronic devices, with all the benefits that they bring, to permeate throughout modern society. | physics.app-ph | physics | III-V-based optoelectronics with low-cost dynamic hydride
vapor phase epitaxy
John Simon, Kelsey Horowitz, Kevin L. Schulte, Timothy Remo, David L. Young, and
Aaron J. Ptak
National Renewable Energy Laboratory, Golden, CO 80401, USA
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of
reasons, including both performance and cost. III-V materials have improved performance
compared to silicon, but currently they are relegated to applications in high-value or niche markets
due to the absence of a low-cost, high-quality production technique. Here we present an advance in
III-V materials synthesis using hydride vapor phase epitaxy that has the potential to lower III-V
semiconductor deposition costs while maintaining the requisite optoelectronic material quality that
enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by
addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.
Silicon as a semiconductor technology is beginning to run into significant technical limits. The death of
Moore's Law has been predicted for decades, but there is now clear evidence that transistor size limits have
been reached, and improvements are only being realized through increases in complexity and cost. Si is
also rapidly approaching the practical limit for solar conversion efficiency with current best performance
sitting at 26.6%1. In contrast to Si, III-V materials such as GaAs and GaInP have some of the best
electronic and optical properties of any semiconductor materials. III-Vs have higher electron mobilities
than Si, enabling transistors operating at high frequencies for wireless communication applications, and
direct bandgaps that lead to extremely efficient absorption and emission of light. These materials appear,
among other places, in power amplifiers that enable transmitting and receiving capabilities in cell phones,
as high-value space-based photovoltaic (PV) panels, and in light emitting diodes (LEDs) for general
illumination applications with nitride-based III-V. III-V PV devices hold record conversion efficiencies for
both single 2 and multi-junction 1 solar cell devices, as well as one-sun modules1. Unlike Si, they can be
quite thin and flexible while maintaining high conversion efficiency; they can reject heat, permitting them
to operate at lower temperatures in real world outdoor conditions 3; and they have lower temperature
coefficients 4, resulting in minimal performance degradation when their temperature does rise, which can
reduce the requirements on heat sinking 3 and allow solar cells to be in intimate contact with rooftops. III-V
materials are readily integrated in multijunction solar cell structures that increase efficiency far beyond
single junction limits. These qualities allow III-V PV modules to produce more energy than a similarly
power rated silicon PV module over the course of their lifetime.3
The development of III-V materials and devices historically focused on quality, efficiency, and
performance, with less regard to the cost of the epitaxial growth, and III-Vs lacked a driving force like Si
CMOS to methodically push manufacturing significantly costs lower. So, while the performance of III-V
devices is undeniably excellent, their cost has limited their use to applications where the characteristics of
the III-V materials are necessary to achieve required performance, and/or the high cost of the
manufacturing is amortized over the many devices grown in a single batch deposition run. For example,
thousands of LEDs, laser diodes, monolithic microwave integrated circuits, and heterojunction bipolar
transistors are produced during one growth run in a production III-V reactor. In large-area applications like
PV, where costs cannot be spread over numerous devices per batch, III-Vs are currently only used in niche,
high-value (and low volume) markets such as space power, concentrating PV in areas with high direct
normal irradiance, and more recently, in area- and weight- constrained applications like unmanned aerial
vehicles (UAVs). If III-V materials were produced more cheaply than is possible using today's
manufacturing techniques, more widespread adoption of III-V's in PV and other opto-electronic
applications could be achieved, and this increased market presence can further reduce manufacturing costs
similar to what was seen in Si cost reductions as it expanded into various applications.
Thus, an innovative III-V manufacturing process is required. Hydride vapor phase epitaxy (HVPE) is a
semiconductor growth technique that combines high epitaxial growth quality, high throughput, and high
precursor material utilization. Several key features make HVPE more cost effective than current III-V
epitaxial growth processes, including deposition rates as high as 300 µm/h for GaAs5, the use of low-cost,
elemental metal sources in the reaction, and high utilization of the source materials, particularly hydride
gases. HVPE was developed in the 1960s and was used commercially for the production of GaAsP LEDs,
as well as photo-emitters and photo-detectors for the telecommunications industry. HVPE largely fell out of
favor, however, due to technical challenges not experienced by today's incumbent technologies, such as
metal organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). Despite the obvious
potential cost benefits delivered by HVPE, the high speed of the growth process and the residence times of
the process gases made it difficult to achieve the low-defect and chemically-abrupt heterointerfaces critical
in many device structures.
Fig. 1. Schematic of the two-chamber D-HVPE reactor at NREL showing side-by-side steady-state reactions for GaAs
and GaInP. The substrate is rapidly shuttled between the growth chambers to create high-quality, chemically abrupt
interfaces.
To enable abrupt heterointerfaces vital to high performance III-V devices, but still maintain high
throughput, we developed dynamic hydride vapor phase epitaxy (D-HVPE), a new route to low-cost III-V
growth. D-HVPE enables the creation of abrupt heterointerfaces while maintaining fast deposition rates.
This can only be achieved in traditional HVPE by introducing detrimental growth interrupts. We designed a
new HVPE reactor with multiple growth chambers, separated by inert gas curtains, shown schematically in
Fig. 1. In this approach, abrupt heterointerfaces are formed through translation of a substrate from one
growth chamber to another, each of which has an independently established, steady-state deposition
reaction for the III-V material to be grown. This technique is effective at generating atomically- and
chemically-abrupt interfaces6,7. This is the first step toward effective device formation at these high growth
rates, and below we will discuss the optical and electrical properties of these interfaces. This two-chamber
design takes advantage of the low-cost source materials (elemental metals) and high growth rates inherent
to HVPE while enabling abrupt, high quality interfaces. This research scale reactor uses a single 2"
substrate for simplicity, but future production scale reactors, like the ones assumed in the next section, will
implement multiple, large-area substrates. The current growth system design approximates an in-line
production reactor in that the different device layers are deposited as the substrate is shuttled through the
various regions of a linear reactor. This design allows evaluation of the effectiveness of in-line device
manufacturing without the need to develop a fully in-line reactor. Employment of an in-line deposition
process will provide a pathway towards significant throughput increases and associated cost reductions,
similar to how in-line deposition techniques already provide low-cost fabrication of thin-film PV devices,
e.g. CdTe. Fig. 2 shows a schematic of what the growth process will look like in a multi-chamber HVPE
reactor that is capable of growing a high-efficiency single-junction GaAs solar cell in minutes instead of
the hours that it takes with current manufacturing technology.
Fig. 2: Schematic of in-line HVPE reactor used to grow low-cost single junction GaAs solar cells together with a
substrate reuse technology.
In the next sections, we examine the economic viability of D-HVPE and then demonstrate that this
technique can be used to produce devices with comparable performance to MOVPE grown devices. We
develop a cost model for the HVPE growth of III-V devices using a linear, in-line deposition system
conceptually similar to that shown in Fig. 2. The cost analysis shows that it is possible for III-Vs to be
dramatically less expensive than they are today. We focus on the specific case of using D-HVPE for the
production of III-V-based solar cells, which can enable competitiveness in various cost-sensitive terrestrial
PV applications with market sizes that increase as substrate costs, which are concurrently the subject of
intense research, are reduced. In the final section, we describe current efforts to produce defect-free
interfaces and high-efficiency single-junction GaAs solar cells using our custom D-HVPE growth system
as an example of devices possible using this technique. We demonstrate solar conversion efficiencies >
25.3% in initial single-junction GaAs device grown at ~ 60 µm/h, similar to the efficiency of devices grown
using traditional growth technology. We also show initial results for monolithic, HVPE-grown, two-
junction GaInP/GaAs solar cell devices that incorporate three separate electrical junctions in a single
device. The combination of low cost growth with the demonstration of high efficiency devices illustrates
the promise of the D-HVPE technique, not only for solar cells, but for all III-V device applications.
HVPE deposition costs
We performed an analysis of the potential impact of the HVPE process on III-V deposition costs using
NREL's established bottom-up methodology8-11. For this analysis, we assume that the NREL two-chamber
HVPE reactor is scaled up to a high-volume, continuous reactor with one zone for heating the substrate and
one deposition zone per layer, as illustrated schematically in Fig. 1 of the Methods section. The deposition
zones are isolated using buffer sections incorporating inert gas curtains. Because no such high volume
HVPE reactor exists today, we created a basic model of the system to estimate throughput and cost per tool;
this model has been reviewed by members of industry and their feedback incorporated for accuracy. Details
of the model appear in the Methods section and in ref 12.
Cost of HVPE-grown III-V photovoltaic devices
We focus more specifically on the use of HVPE to produce low-cost, high-efficiency, III-V solar cells and
their potential competitiveness in different markets. If commercialized, D-HVPE could immediately
provide value to PV markets requiring high efficiency, high specific power, or flexible form factors,
including consumer electronics, UAVs, military, space markets, and automotive roofs13 by reducing the
cost of epitaxy while providing similar performance to what is available today. The overall benefit depends
on the cell type, production volume, and processes used for other aspects of the cell fabrication (e.g.
metallization, choice of substrate) for a given manufacturer.
As discussed above, III-V solar cells at one-sun have not previously penetrated mainstream PV power
markets due to their prohibitively high cost. In this section, we assess the potential for D-HVPE and
substrate reuse to enable III-V technology to compete in some of these markets by modeling high volume
costs for III-V solar cells fabricated using these processes. We explore their potential balance-of-system
[BOS] (e.g. racking materials, installation costs) and levelized cost of energy [LCOE] (e.g. cost to produce
a kWhr of electricity) advantages over incumbent Si flat plate technology.
Our cell cost models indicate that, at scale, dual junction InGaP/GaAs cells deposited via HVPE could
potentially reach costs below $0.50/W, even with U.S. manufacturing. This would allow these solar cells to
be competitive in larger PV markets that would benefit from the high power density, low operating
temperature and temperature coefficient, and lightweight, flexible form factor provided by III-V materials.
Applications could include PV tile roofs, PV on electric vehicles (EVs), and certain residential and
commercial rooftop installations that are weight- or area-constrained. In fact at <$0.50/W, III-V solar cells
may even be competitive when dropped into traditional PV module and system designs. In the remainder of
this section, we explore the case of residential rooftop systems, which have higher BOS costs and areal
constraints than typical ground-mount, utility-scale installations, and thus stand to benefit more
significantly from the increased efficiency associated with III-V devices. We compare the total installed
system cost and LCOE for incumbent monocrystalline Si PERC14 technology to that of HVPE-deposited
III-V cells with substrate reuse. PERC cells were chosen for comparison because they are rapidly gaining
traction and are anticipated to become market-dominant over the next few years15. We use modeled cell and
module prices for both technologies that include overhead costs and a sustainable product margin, rather
than using current Si PERC cell prices for the Si case, in order to obtain a technology-based comparison.
The details and assumptions of this model appear in the Methods section. The results are shown in Fig. 3.
While the III-V single junction cell costs are higher than for PERC cells, the increased efficiency of the III-
V single junction cells compared to Si results in balance-of-module [BOM] (e.g. glass, encapsulant,
busbars) and BOS cost savings, resulting in comparable total installed system costs. The savings is higher
for the dual junction cells due to their higher efficiency, resulting in total installed system costs that could
be comparable to those of current PERC technology. At comparable installed system costs, III-V cells
should provide a lower LCOE than Si, due to the higher energy yield resulting from their lower operating
temperature and temperature coefficient. In prior field measurements, single-junction GaAs cells exhibited
8% higher energy yield than Si cells in Phoenix, AZ in an open-rack configuration, though this will vary
with location.3 Any increases in energy production translate to decreases in LCOE; thus, III-Vs could have
an 8% lower LCOE compared to monocrystalline Si in Phoenix. The relative installed cost of PERC cells
compared to HVPE-deposited III-Vs is similar for commercial rooftop systems, so similar LCOE
reductions would also occur in these markets. Finally, the energy yield improvement and thus LCOE
benefit would be even greater in applications like solar shingles where cells are direct-mounted on to the
roof because of the lack of a suitable heat sink for the cells.
Cell
Balance of module
Balance of system
$3.50
$3.00
$2.50
$2.00
$1.50
/
)
C
D
W
D
S
U
7
1
0
2
(
t
s
o
C
l
a
t
o
T
$1.00
$0.50
$0.00
Current c-Si PERC (19%)
HVPE GaAs (23.5%)
HVPE InGaP/GaAs (28.5%)
Fig. 3: Comparison of total installed system costs for a 5.6kW residential rooftop system for current monocrystalline Si
PERC cells compared to estimates for D-HVPE-deposited GaAs and InGaP/GaAs cells in the case where substrate cost
are addressed. Assumes Chinese manufacturing and high-volume production (500 MW/year) for all cases. Cell,
module, and system costs shown include overhead costs and sustainable product margins.
The ability to reach costs on the order of $0.50/W depends critically on the cost of the substrate. These cost
models assume that the cost of the substrate could be reduced significantly in the long-term to a value of ~
$1.00 per 6" wafer, in this case via a large number (approximately 100, depending on the future GaAs
substrate price) of substrate reuses and avoidance of CMP cost. The ability to reuse the substrate with
limited or no CMP through the use of a series of buffer layers has been demonstrated in the literature, but
this has not yet been demonstrated at scale or with hundreds of wafer reuses,16,17 and this may be
challenging to achieve with high yield. However, active research is taking place on substrate reuse,
including chemical lift-off and mechanical fracture technologies, and lower cost substrates. To reach cell
costs on the order of $1/W to $5/W, which may be acceptable in some markets (e.g. PV on EVs, other
portable power applications), less aggressive substrate cost targets would be sufficient. While there are III-
V solar cell companies that currently implement epitaxial lift-off18 and reuse the substrate, it is unclear how
many times the substrate is being reused. Additional research and development is required to demonstrate a
hundred reuses at scale with high yield and significantly reduced polishing and reclaim costs. The lift-off
process itself must also be scaled-up; current production volumes for III-V cells are low. Alternatively, cost
reductions could be achieved via the use of a low-cost substrate (e.g. a virtual substrate or template, direct-
growth on a low-cost substrate), as long as similar efficiencies can be obtained, or a combination of the two
(lower cost substrate that is reused a lower number of times).
The cost model presented here does assume the immediate implementation of the technology presented in
this paper. In addition to the time to commercialize and scale-up the D-HVPE process, the substrate
advances will require time and investments in research and development. However, because the results in
Fig. 3 are based on 2017 module and system cost structures, and include modeled 2017 Si PERC cell costs,
these comparisons essentially assume these III-V cell costs were achieved overnight. While this serves to
illustrate the benefits of higher III-V cell efficiency at the module and system level and provides a useful
benchmark for understanding whether or not III-V cells might be applicable to general power markets,
some additional discussion of the future is warranted. Further BOM and BOS cost reductions are
anticipated in the future.19 These reductions would benefit both Si and III-Vs, but the marginal value of
higher efficiencies, and thus the advantage of III-V cells over Si, would be somewhat reduced.
Additionally, the efficiencies of Si systems will still rise, although they are beginning to hit practical
limits,20 and Si module costs are anticipated to decrease, but will similarly asymptote eventually as the
technology is already quite mature. We were not able to make quantitative comparisons of the installed
system costs in these scenarios due to the lack of PV cost projections and general uncertainty around future
system cost structures, including the cost contribution of Si PV modules and the relative cost of BOS
components that scale with area, which drives the impact of efficiency on installed cost. Finally, Fig. 3
includes only the costs associated with single and dual junction III-V cells; HVPE could potentially allow
for the addition of even more junctions at a low cost, with the development of processes for depositing the
required materials, increasing efficiencies further and enabling additional BOM and BOS cost savings out
of reach for Si.
Development of D-HVPE for high efficiency devices
HVPE was successfully employed in the past to produce commercial devices, such as LEDs and detectors,
but the production of HVPE-grown III-V devices paled in comparison to MOVPE grown devices21,22,
primarily due to the difficulty of making abrupt, highly-passivated heterointerfaces, as noted earlier. This is
important because unpassivated interfaces have dangling atomic bonds and/or impurities that would
otherwise act as non-radiative recombination sites and decrease device performance. It is important that the
potential low costs of HVPE growth detailed in the previous section be viewed in the context of achievable
performance. The key test for D-HVPE is to effectively passivate III-V layers to decrease carrier
recombination at interface states, while still maintaining the high throughput that helps to make HVPE a
low-cost technology.
A simple device structure that acts as a sensitive test of interface abruptness is the Esaki diode, or tunnel-
junction.23 Tunnel junctions are used in frequency converters, detectors, oscillators, amplifiers and
switching circuits. This diode uses a highly-doped n-type region in intimate contact with a similar p-type
region in order to enable carrier tunneling from the valence band of one side of the junction to the
conduction band of the other. The change from n-type to p-type needs to occur on sub-nanometer length
scales to ensure significant wave-function overlap, making the observance of tunneling behavior a good
measure of interface abruptness in these epitaxial layers. Our D-HVPE reactor allows us to form
GaInP/GaAs heterointerfaces both at high growth rate and without resorting to a detrimental pause in the
growth process for a change in material chemistry. Growth interrupts are times when impurities can adsorb
on the surface and native defects can form, both of which lead to imperfect interface passivation, increased
interface roughness, and detrimental device performance such as, lack of tunneling, or a decreased solar
conversion efficiency. In addition, interrupts reduce the throughput of the process, increasing device costs.
Fig. 4 shows the current-density vs voltage characteristics of a tunnel junction grown via D-HVPE. This
tunnel junction achieved a peak tunneling current of 11.2 A/cm2, validating the ability of D-HVPE to form
abrupt doping profiles. This device not only has an abrupt doping profile but also an abrupt material change
from GaInP to GaAs. The extremely low resistance across it (Fig. 4 insert) allows us to use this tunnel
diode in multijunction solar cell structures to connect two subcells in series such that the voltages of the
individual subcells add together to create a structure with high solar conversion efficiency.24 This indicates
that D-HVPE is capable of creating heterojunctions that are thin, chemically abrupt, and free of detrimental
defects that would lower the achievable performance necessary for high-peak-current tunneling.
Fig. 4: Current-density-voltage characteristics for a tunnel junction grown using D-HVPE. Insert shows an amplified
look around 0 V showing the low resistance of the tunnel junction.
Solar cells also require low-defect interfaces to achieve high performance and their performance provides
an excellent evaluation of material quality. For this reason, we grew a series of III-V solar cells to test the
ability of D-HVPE to create interfaces that reduce minority carrier recombination. Fig. 5 (left) shows a
comparison of internal quantum efficiency measurements, the ratio of unreflected photons to those that are
collected as useful current, of single-junction GaAs solar cells with different levels of surface and interface
passivation. The details of both the growth and the processing of these devices are available in the Methods
section. The addition of front and back surface passivation (from solid red to black) directly improves
carrier collection at all wavelengths of light by minimizing the carrier recombination rate at these
interfaces. Fig. 5 also shows for comparison an MOVPE-grown GaAs solar cell with GaInP front and rear
passivation that exhibits nearly identical quantum efficiency to the D-HVPE-grown passivated device. Each
of these passivated devices reaches nearly unity internal quantum efficiency over a wide range of
wavelengths, from the GaAs bandedge at ~890 nm until the GaInP passivating layers begin to absorb light
below ~ 670 nm, meaning that every photon absorbed in this wavelength range is converted into useful
current. The nearly identical performance between the MOVPE and D-HVPE grown devices occurs despite
the fact that the D-HVPE device growth rate was an order of magnitude higher than for the MOVPE
control sample. This indicates D-HVPE capably creates heterointerfaces with equal performance to the
incumbent batch growth technology in a continuous process that can dramatically increase III-V deposition
throughput.
Fig. 5: (Left) Internal quantum efficiency measurements of an unpassivated (red), and a fully passivated (black) single
junction GaAs solar cell grown by D-HVPE at ~ 60 µm/h. The dashed blue curve represents data from an MOVPE-
grown device with nominally the same structure (shown in middle), but using a growth rate of ~ 6 µm/h. (Right)
NREL-certified current-voltage data for the D-HVPE-grown GaAs solar cell with 25.3% conversion efficiency.
Fig. 5 (right) likewise shows the current-voltage characteristics of a D-HVPE-grown single-junction GaAs
solar cell with front and rear passivation under simulated one-sun AM1.5G illumination. The NREL-
certified measurement indicates a 25.3% conversion efficiency for a device grown at 60 µm/h. The device
achieved a current density of ~28 mA/cm2, which matches the current density of the control MOVPE
device grown with the same structure, and is only 6% lower than the record MOVPE device which utilized
a more transparent AlInP window layer2. The open-circuit voltage (VOC), which can be used as a sensitive
indicator of the crystal perfection in a solar cell, is 1.08 V, only 0.04 V below world-record MOVPE-grown
devices.1
III-Vs also have the added benefit of easily incorporating additional alloy stacks to create multijunction
devices that convert a larger portion of the solar spectrum even more efficiently. These devices are
significantly more complicated due to the larger number of layers needed in order for the device to operate
properly. We previously showed GaInP top subcells with good bulk material quality that can be coupled
with the GaAs bottom subcell and the tunnel junction described here.24 In order to demonstrate the viability
of D-HVPE to manufacture more complex multijunction solar cell devices with the potential for >30%
efficiency, we created a GaInP/GaAs two junction device with a GaInP/GaAs tunneling interconnect to
produce a monolithic two terminal solar cell device. This device utilizes eight different layers (see Fig. 6)
that need to have the right composition, doping, and low-defect interfaces; a structure that would be nearly
impossible to grow by traditional HVPE. Fig. 6 shows the current density-voltage characteristics of the a
multijunction solar cell device grown via D-HVPE, measured under one-sun illumination. The
unpassivated top cell limits the current, however the device still increases the VOC from the single junction
case from 1.08 V to 2.40 V, highlighting the excellent bulk quality of both subcells. This device showcases
the ability of D-HVPE to grow high quality devices that utilize multiple layers of different composition and
doping, while maintaining high throughput. We expect that these devices, when properly optimized, can be
grown in under 5 min as opposed to the multiple hours required by MOVPE growth. We further expect
that two-junction, D-HVPE-grown solar cells will yield conversion efficiencies close to 30% in the near
future with simple structural modifications,24 far in excess of the capabilities of Si PV, with a growth
technique that can approach the costs of Si production.
Fig. 6: Current density-voltage characteristics for an HVPE-grown multijunction solar cell device under the AM1.5G
solar spectrum. The structure of device is shown on the right.
All the device results presented here show that D-HVPE is enabling for III-V device growth using this low-
cost technique. We also expect the efficiency of the preliminary D-HVPE-grown solar cells shown above to
increase with further optimization. For example, little work has been done to optimize the bulk material
quality through the use of optimized substrate temperature or reactant flow ratios in order to decrease
native or extrinsic defect concentrations. Also, the use of a more transparent AlInP window would create a
significant positive increase on the current density, roughly ~ 1.2% absolute in a GaAs single junction solar
cell, and >30% in a multijunction device. The addition of a AlInP window will also result in a small
increase in the VOC.. Significant fundamental research is required to determine whether high quality AlInP
can be grown by HVPE, however. These improvements will lead to equal, or at least nearly-equal, device
performance for a growth technique that projects to be much cheaper than existing III-V technologies.
While this section focused on recent efforts to produce III-V solar cells, the D-HVPE technique is clearly
applicable to many kinds of devices. HVPE is already used to produce high-quality nitride-based template
layers, as well as Ga2O3 for power electronics applications. The use of the D-HVPE process for the
formation of more complicated device structures that rely on abrupt and electrically ideal interfaces will
allow for the production of low-cost, high-quality transistors, light emitters and detectors, and power
conditioning devices, in addition to solar cells. Indeed, the development of low cost III-V growth may
enable technologies yet to be created.
Conclusions
We demonstrated the ability for D-HVPE to grow high efficiency devices with equivalent performance to
that of conventional MOVPE, validating this new technology for the manufacture of high-performance III-
V opto-electronic devices. We also developed a cost model for D-HVPE in a high volume production
context. Our cost model further indicates that the use of D-HVPE together with a low-cost substrate
approach could at last enable the use of III-V's in terrestrial PV markets, including certain residential and
commercial rooftop installations. This technology can also be applied to manufacture non-PV devices such
as high-efficiency LEDs and and devices for wireless communications applications.
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Acknowledgments
The authors would like to thank David Guiling for materials growth and Michelle Young for device
processing. This work was authored by Alliance for Sustainable Energy, LLC, the manager and operator of
the National Renewable Energy Laboratory for the U.S. Department of Energy (DOE) under Contract No.
DE-AC36-08GO28308. Funding provided for the cost model, tunnel junction and multijunction cell work
was provided by the Advanced Research Projects Agency (ARPA-E), US Department of Energy, award
#15/CJ000/07/05 and U.S. DOE Office of Energy Efficiency. Work on the single junction GaAs was
provided by U.S. DOE office of Energy Efficiency and Renewable Energy, Solar Energy Technologies
Office. The views expressed in the article do not necessarily represent the views of the DOE or the U.S.
Government. The U.S. Government retains and the publisher, by accepting the article for
publication, acknowledges that the U.S. Government retains a nonexclusive, paid-up, irrevocable,
worldwide license to publish or reproduce the published form of this work, or allow others to do so, for
U.S. Government purposes.
Contributions
JS helped in designing and building the D-HVPE system, processed and helped characterize the devices
presented here.
KLS helped in the design of the D-HVPE system and in the growth and characterization of the GaInP
materials.
KH helped develop the cost modelling.
TR helped develop the cost modelling.
DLY assisted in the design and building of the D-HVPE system.
AJP is the principal investigator of this work, helped in the design and building of the D-HVPE system, and
contributed to the design and characterization of the tunnel junction devices.
All authors contributed to the writing in this manuscript.
Methods
Methods Figure 1. Diagram showing the concept of the high-volume, in-line HVPE tool used for cost analysis. In our
model, there is one deposition zone per layer in the device.
D-HVPE reactor cost model
In this model, the length of each deposition zone, L, is calculated as follows:
𝐿"#$% '=𝑚𝑎𝑥, -.
/010∙34∙56
(1)
where ti is the thickness of layer i in μm, Ri is the deposition rate for layer i in μm/h, Sb is the reactor's belt
speed in mm/min, and Ds is the substrate diameter or width in mm.
We calculate the length of the heating zone similarly, except with t equal to the required substrate
temperature (650°C) and R equal to the heating rate (assumed to be 130°C/min, based on heating rates
currently observed in the laboratory reactor). The total length of the reactor is then equal to:
𝐿7#789=𝐿:%87'$;+𝐿=##9'$;+∑ 𝐿"#$% '+𝑁∙𝐿@ABB%C+2∙𝐿9#8E/A$9#8E
G'HI
(2)
where Lheating and Lcooling are the lengths of the heating and cooling zones, respectively, N is the number of
deposition zones, Lbuffer is the length of the buffer zone between deposition zones, and Lload/unload is the
length required for loading or unloading. We assume Lbuffer = 0.3 m and Lload/unload = 1.5 m. Here, we use a
belt speed of 150 mm/min; this speed is within the range previously demonstrated for commercial vapor
phase deposition of CdTe25 and atmospheric pressure chemical vapor deposition (APCVD) of Al2O326 of
12.7 to 381 mm/min. For high volume production, we assume that there are six parallel 6" wafer tracks in
the tool; similar numbers of wafer tracks have been used for commercial deposition of other thin film
materials in the past. Belt speed, tool length, tool width, and deposition rate are free parameters that can be
adjusted (within certain constraints) to optimize the design when a commercial reactor is developed.
We estimate that the cost of each deposition chamber would be similar to that of a continuous APCVD
system27,28, which sometimes also consist of gases flowing vertically through quartz reaction tubes onto a
substrate conveyed along a belt. We collected data on single-chamber APCVD reactors via industry
interview, and averaged these to obtain a base price, Pbase, of $825,000, excluding automation and auxiliary
costs. For a scaled HVPE reactor with similar width, we then approximate the total tool cost as:
𝐶7##9=𝑃@8L%∙M∑
NOPQR 0
S0TU
GV
N6W.R
XY∙(1+𝛽∙(𝑁−1))
(3)
where Lbase is the length of the deposition area for a single chamber tool used as a proxy for HVPE costs, in
this case a continuous APCVD reactor, α is a scaling factor for tool price with length, and β is a scaling
factor representing the fractional price of each additional zone compared to the base price. Both α and β
contain significant uncertainty at this point; however, based on interviews with several major suppliers of
Table 1: Key Input Assumptions for the HVPE Deposition Cost Model
Input
Value
$0.21/g
Ga price (6N)
$0.82/g
In price (6N)
High purity AsH3 price
$0.48/g
$0.55/g
High purity PH3 price
70%
Ga material utilization
70%
In material utilization
AsH3 material utilization
30%
30%
PH3 material utilization
10,000 sccm
H2 curtain flow rate
HCl carrier gas flow rate
14.5 sccm
7.3m (1J cell), 9.6m (2J cell)
Tool length
Tool price (including automation and auxiliary
$4.7million (1J), $11.6 million (2J cell)
equipment)
Equipment maintenance cost
4% of total equipment cost/year
high volume deposition equipment, we approximate tool costs using α = 0.75 and β = 0.6. Sensitivity
analysis showed that the cost advantages of HVPE deposition are robust to a range of α and β values.
Key assumptions made in the deposition cost analysis are summarized in Table 1. Material price values are
based on quotes received from material suppliers, interviews with members of industries that purchase the
materials, and (where relevant) aggregation of data from online metal pricing sources and the U.S.
Geological Survey. All material pricing is based on the assumption of high volume production and large
orders. For HVPE deposition, we assume additional costs for automation and auxiliary equipment and
installation equal to 22% and 20% of the total tool price, respectively. The material utilization rates for
MOVPE are based on prior work in Ref. 10, and have been validated again by some industry members as
recently as 2018. Material utilization rates for HVPE are currently uncertain. A Ga and In utilization of
70% is calculated from our research scale HVPE reactor. For all analysis, we assume U.S. manufacturing
and 100% plant capacity utilization.
D-HVPE III-V solar cell cost model
We model cell costs using the NREL cost model for single and dual junction III-V solar cells under one sun
illumination, first published in Ref. 10. The cost model was refined and updated in 2018 in order to reflect
current pricing for equipment and materials, as well as changes in process or capability. Fig. 5 shows the
device stacks modelled here. Low-cost metallization compatible with processing and epitaxial lift-off
(ELO) of III-Vs is still under development. Our cost model assumes the cell contacts are fabricated using
low-cost plating without the use of gold. We also assume high volume ELO of the GaAs substrate and
≥100 substrate reuses without requiring chemical-mechanical polishing (CMP). The ability to reuse the
substrate with limited or no CMP through the use of a series of buffer layers has been demonstrated in the
literature, but this has not yet been demonstrated at scale or with hundreds of wafer reuses,16,17 and this may
be challenging to achieve with high yield. However, active research is taking place on substrate reuse,
including chemical lift-off and mechanical fracture technologies, and a low-cost process with a high
number of reuses may be feasible in the long-term.
We further assume that III-V cells can be dropped into standard modules employed for c-Si cells. We use
NREL's module cost model to calculate module cost and minimum sustainable price (MSP) (see Refs. 8-11
for a description of MSP). The module MSP is input into NREL's system cost models for residential,
commercial, and utility scale systems29 to evaluate total system cost.
D-HVPE III-V material growth methods
All materials and devices shown in this work were grown in our dual chamber, Dynamic-HVPE (D-HVPE)
reactor30 using pure Ga and In metal, HCl, AsH3, PH3, and H2 carrier gas. Dilute H2Se was the n-type
dopant, while dimethylzinc was the p-type dopant. Heterointerfaces were formed by rapid mechanical
transfer of the substrate between the two growth chambers, with each chamber stabilized at a new growth
condition (either a change in material, doping, or both) for at least one minute before transfer. Substrates
were (100) n+ GaAs doped with Si and offcut 4° towards the (111)B plane. The growth rates of the GaAs
absorber layers was 60 µm/h, while the tunnel junction GaAs and GaInP layers were grown at 6 µm/h. The
GaInP absorber in the tandem device was grown at 54 µm/h. An n+ GaAs buffer was grown to bury
contamination at the initial growth interface before device growth.
Solar cell devices were processed using the method detailed in ref. 31. Unpassivated devices were processed
on wafer, while passivated devices were grown inverted and removed from the wafer. First, a broad area
Au contact was electroplated onto the back-contact layer. The Au surface was bonded to a Si handle using
an epoxy and the substrate was selectively etched away using a NH4OH/H2O2/H2O 1:2:2 solution, exposing
a GaInP etch stop layer. This layer was removed selectively with hydrochloric acid. A grid pattern was
defined by standard lithography techniques, and Ni/Au front contact grids were electroplated for the front
grid contacts of all devices. Finally, 5 mm x 5 mm area devices were defined by lithography and isolated
using selective wet chemical etching.
We measured solar cell external quantum efficiency (EQE) on a custom instrument in which chopped,
monochromatic light was split and then sent to the device of interest and a calibrated, broadband reference
diode. We measured the output current of the device and reference on a lock-in amplifier, and used it to
calculate the EQE, which is the ratio of electron current out to incident photons. Specular reflectance from
the device surface was measured with a separate, calibrated reference diode.
We compared the measured EQEs to those of calibrated GaInP and GaAs reference cells to calculate
spectral correction factors for the AM1.5G spectrum. We set the height of a Xe-lamp solar simulator to
obtain an illumination of 1000 W/cm2, determined by measuring the current from the reference GaAs cell
held under the lamp and adjusting by the spectral correction factor for the subcell of interest. We set dual
junction top cell illumination by placing the GaInP reference cell under the lamp at the GaAs one-sun
height and added current using a 470 nm LED to obtain one-sun equivalent illumination. The tandem cell
one-sun J-V curves were measured under the adjusted spectrum.
|
1705.10318 | 1 | 1705 | 2017-05-29T15:35:18 | Electrical detection of hyperbolic phonon-polaritons in heterostructures of graphene and boron nitride | [
"physics.app-ph",
"cond-mat.mes-hall",
"cond-mat.mtrl-sci",
"physics.optics"
] | Light properties in the mid-infrared can be controlled at a deep subwavelength scale using hyperbolic phonons-polaritons (HPPs) of hexagonal boron nitride (h-BN). While propagating as waveguided modes HPPs can concentrate the electric field in a chosen nano-volume. Such a behavior is at the heart of many applications including subdiffraction imaging and sensing. Here, we employ HPPs in heterostructures of h-BN and graphene as new nano-optoelectronic platform by uniting the benefits of efficient hot-carrier photoconversion in graphene and the hyperbolic nature of h-BN. We demonstrate electrical detection of HPPs by guiding them towards a graphene pn-junction. We shine a laser beam onto a gap in metal gates underneath the heterostructure, where the light is converted into HPPs. The HPPs then propagate as confined rays heating up the graphene leading to a strong photocurrent. This concept is exploited to boost the external responsivity of mid-infrared photodetectors, overcoming the limitation of graphene pn-junction detectors due to their small active area and weak absorption. Moreover this type of detector exhibits tunable frequency selectivity due to the HPPs, which combined with its high responsivity paves the way for efficient high-resolution mid-infrared imaging. | physics.app-ph | physics | Electrical detection of hyperbolic phonon-polaritons in heterostructures of
graphene and boron nitride
Achim Woessner,1, ∗ Romain Parret,1, ∗ Diana Davydovskaya,1 Yuanda Gao,2 Jhih-Sheng Wu,3
Mark B. Lundeberg,1 Sébastien Nanot,1 Pablo Alonso-González,4, 5 Kenji Watanabe,6 Takashi
Taniguchi,6 Rainer Hillenbrand,7, 8 Michael M. Fogler,3 James Hone,2 and Frank H.L. Koppens1, 9, †
1ICFO -- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860 Barcelona, Spain
2Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA
3University of California San Diego Department of Physics 0319 9500 Gilman Drive La Jolla, CA 92093-0319
4CIC nanoGUNE, 20018 Donostia-San Sebastian, Spain
5Departamento de Física, Universidad de Oviedo, 33007, Oviedo, Spain
6National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
7CIC nanoGUNE and UPV/EHU, 20018 Donostia-San Sebastian, Spain
8IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Spain
9ICREA -- Institució Catalana de Recerça i Estudis Avancats, 08010 Barcelona, Spain
Light properties in the mid-infrared can be con-
trolled at a deep subwavelength scale using hyper-
bolic phonons-polaritons (HPPs) of hexagonal boron
nitride (h-BN).1 -- 7 While propagating as waveguided
modes3,4,8 HPPs can concentrate the electric field
in a chosen nano-volume.1,3 Such a behavior is at
the heart of many applications including subdiffraction
imaging1,3 and sensing. Here, we employ HPPs in
heterostructures of h-BN and graphene as new nano-
optoelectronic platform by uniting the benefits of effi-
cient hot-carrier photoconversion in graphene and the
hyperbolic nature of h-BN. We demonstrate electrical
detection of HPPs by guiding them towards a graphene
pn-junction. We shine a laser beam onto a gap in
metal gates underneath the heterostructure, where the
light is converted into HPPs. The HPPs then propa-
gate as confined rays heating up the graphene leading
to a strong photocurrent. This concept is exploited
to boost the external responsivity of mid-infrared pho-
todetectors, overcoming the limitation of graphene pn-
junction detectors due to their small active area and
weak absorption. Moreover this type of detector ex-
hibits tunable frequency selectivity due to the HPPs,
which combined with its high responsivity paves the
way for efficient high-resolution mid-infrared imaging.
Hexagonal boron nitride has found multiple uses in van
der Waals heterostructures, such as a perfect substrate
for graphene,9,10 a highly uniform tunnel barrier,11,12 and
an environmentally robust protector. In particular, h-BN
substrates enable one to achieve high carrier mobility and
homogeneity in graphene.9,10 In addition, h-BN is a natu-
ral hyperbolic material as in the two so called reststrahlen
bands (760 -- 825 cm−1 and 1360 -- 1610 cm−1) the in plane
(x,y) and the out of plane (z) permittivity are of oppo-
site sign.1,3,4 As a consequence, h-BN supports propagat-
ing hyperbolic phonon-polaritons (HPPs) which are elec-
tromagnetic modes1,3 originating in the coupling of pho-
tons to optical phonons. Because of their unique physical
properties such as long lifetime, tunability,2 slow propa-
gation velocity,8 and strong field confinement the HPPs
have a great potential for applications in nanophotonics.
The capability to concentrate light into small volumes
can also have far-reaching implications for opto-electronic
technologies, such as mid-infrared photodetection,13 -- 19
on-chip spectroscopy and sensing. These concepts, how-
ever, remain underexplored.
Here we present a hyperbolic opto-electronic device
that takes taking advantage of that fact that h-BN is
at the same time an ideal substrate for graphene as well
as an excellent waveguide for HPPs. We show how HPPs
can be exploited to concentrate the electric field of inci-
dent mid-infrared beam towards a graphene pn-junction,
where it is converted to a photovoltage. The impact of
the HPPs leads to a strongly increased responsivity of the
graphene pn-junction in the mid-infrared up to 1 V/W,
with zero bias applied.
In previous studies graphene pn-junctions have shown
very high internal efficiencies1,20,22 -- 25 due to the strong
photo-thermoelectric effect in graphene. However, the
active area of this type of devices is extremely small, lead-
ing to poor light collection. For detecting mid-infrared
light this issue is even more acute. By exciting hyper-
bolic phonon polaritons we strongly enhance the effective
absorption. We compare our experimental results with
FDTD simulations and an analytical model, providing
insight into the underlying physical processes and the
frequency tunability of our novel mid-infrared detectors.
The investigated devices consist of heterostructures of
monolayer graphene encapsulated in h-BN, obtained by
the polymer-free van der Waals assembly technique,10
and placed on top of two metal gates separated by a
narrow gap (Fig. 1a). The graphene layer has a mobil-
ity of ∼ 30000 cm2/Vs.
It is electrically connected to
the source and drain electrodes by edge contacts10 (see
methods). An optical micrograph of a typical device is
shown in Fig. 1b. The individually tunable carrier den-
sity on both sides of the split gate is used to tune the
photosensitivity of our device.1,20,22,24
The operation of our device is as follows. HPPs are
launched at the sharp gold edges of the split gate when
the laser beam illuminates the sample under normal in-
cidence with the polarization perpendicular to the gap
7
1
0
2
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a
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9
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h
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-
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p
a
.
s
c
i
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y
h
p
[
1
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8
1
3
0
1
.
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0
7
1
:
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2
Figure 1 Device schematic and working principle. a Schematic of the encapsulated graphene pn-junction. The h-
BN/graphene/h-BN is placed on two gold split gates and contacted electrically by the edges. b Optical image of one device: the
top (bottom) BN is blue (yellow). The black rectangle indicates the measurement region in d. The distance between the two gates
in this device is 100 nm. c Side view of the propagating hyperbolic phonon-polaritons simulated by FDTD for the device in b. The
thickness of the bottom h-BN is 50 nm and the top h-BN is 55 nm. HPPs are launched at the edges of the split gates and propa-
gate as directional rays. While they cross the graphene plane they are partially absorbed leading to a temperature increase in the
graphene. d Spatial map of the device responsivity for a polarization of the laser perpendicular to the gap of the split gate. The
photoresponse arises at the junction, indicated by the dashed-dotted line. The graphene edge is indicated by the solid black line.
The gate voltages used here are (Vg1 = 1.2 V and Vg2 = −0.21 V). The electric field polarization and propagation direction (E,k)
are represented in panels c and d.
between the gate electrodes.3,8,26 While the HPPs prop-
agate as highly directional rays in both bottom and top
h-BN slabs of the stack, they are absorbed when they
pass through graphene (Fig. 1c) creating hot carriers.
The hot carriers diffuse over a length scale of the electron
cooling length (about 0.5 -- 1 µm) and generate a temper-
ature increase peaking at the graphene junction defined
by the position of the gap in the metal gates. This inho-
mogeneous temperature distribution induces a photovolt-
age due to the Seebeck effect. Thus, all HPPs absorbed
within approximately one cooling length from the junc-
tion contribute to the photovoltage. Similar HPPs lauch-
ing presumably also occurs at the source and drain gold
contacts. However, they do not contribute to the photo-
voltage because the electrodes are situated much further
than the electron cooling length from the junction.
The measured spatially resolved photoresponse of the
device is shown in Fig. 1d. The photoresponse arises
mainly at the junction (shown as a dashed line). In such
a graphene junction the photovoltage Vph is generated by
the photo-thermoelectric effect:1,20,22,24,27
Vph = ∆S∆T
(1)
where, ∆S = S1− S2 is the difference between the See-
beck coefficients of graphene on the left and right side of
the junction and ∆T is the difference in electronic tem-
perature at the junction and at the source/drain con-
tacts. The photo-thermoelectric effect dominates over
other possible mechanisms of photovoltage generation
due to the high Seebeck coefficient of graphene (S ∼
100 µV K−1), which is in-situ tunable by gating.1,28 By
controlling the gate voltage on the two sides of the junc-
tion individually and recording the photocurrent we mea-
sure a 6-fold pattern, a clear sign that the photocurrent
in our device is governed by the photo-thermoelectric
effect1,20,22,24,27 (see supplement). The highest respon-
sivity measured when changing the gate voltages is ob-
tained for Vg1 = 1.2 V and Vg2 = −0.21 V. This cor-
responds to a pn-configuration with a fairly low doping
level of about 0.06 eV (see supplement).
The spectral responsivity (Fig. 2a) is obtained by
recording the photovoltage while tuning the wavelength
of the quantum cascade laser source from 1000 to
1610 cm−1. A strong photocurrent enhancement for
the polarization perpendicular to the gap, peaking at
1515 cm−1, is observed. The peak around 1100 cm−1 is
related with the SiO2 surface phonon of the underlying
substrate.27
In order to understand the observed behavior we use
finite difference time domain (FDTD) simulations to
model the scattering process of far-field light into HPPs
and the subsequent HPP waveguiding and absorption
of the HPPs in the graphene (solid lines in Fig. 2a).
A good match with the experimentally observed spec-
tral response is obtained (points in Fig. 2a). The simu-
lated absorption spectrum shows a peak inside the rest-
strahlen band of h-BN. The spatial distribution of the
50µm~E~k100nmSiO2AuG1G2h-BNdbh-BNdtAirGraphene2aθE~E⊗~k10µmE0500Responsivity(mV/W)abcd 3
Figure 2 Absorption and photocurrent spectra. a Responsivity spectrum for light polarisation perpendicular (parallel) to the
junction in blue (red). The gate voltages used here are (Vg1 = 1.2 V and Vg2 = -0.21 V). The main peak which lies in the upper
reststrahlen band of h-BN (grey shaded region) is the result of the hyperbolic phonon-polariton assisted photoresponse. Solid lines
are absorption spectra simulated by FDTD. b FDTD simulation of the spatial absorption profile in the vicinity of the junction as
a function of the laser frequency. The spatial integral at each frequency is proportional to the simulated absorption cross section
spectrum in a. c Near-field photocurrent measurement with subtracted background photocurrent of a similar device with 42 nm
of bottom h-BN thickness, 13 nm on top and a gap width of 50 nm. The top edge of the panel is the edge of the graphene and
the gap position is indicated. The left gate is set to −2 V and the right gate to 0.1 V. d Side views of the propagating HPPs at
1400 cm−1 (below the maximum), 1515 cm−1 (at the maximum) and at 1560 cm−1 (above the maximum) respectively.
mula tan θ(ω) = ipx,y(ω)/pz(ω).1,3 It predicts that
electric field inside the h-BN layers is shown in Fig. 2d.
It is dominated by four rays which are launched at the
edges of the split gate and undergo multiple reflections
from the top and bottom surfaces. The rays maintain
a fixed angle with the c-axis. This angle is related to
the anisotropy of the permittivity via the analytical for-
θ changes from π/2 to 0 as ω varies across the rest-
strahlen band. The unusual ray pattern of HPP emission
in turn affects the spatial absorption pattern in graphene,
which is shown in the simulated spectral-spatial pattern
of Fig. 2b. This pattern is dominated by the four families
of "hot spots" that correspond to the four HPP rays seen
in Fig. 2d. The separation of hot spots within each fam-
ily is 2d tan θ, where d = dt + db is the total thickness
of the h-BN layers (Fig. 1c).
To investigate further the origin of the observed spec-
tral peaks in the photocurrent we carried out scanning
near-field photocurrent mapping of our devices.29,30 In
this technique a metallized atomic force microscopy tip
is illuminated with an infrared laser and a near-field is
generated at the apex of the tip. This enables us to mea-
sure the photocurrent with a spatial resolution greatly ex-
ceeding the diffraction limit of light. The representative
results are shown in Fig. 2c. The device region measured
includes the gap of the split gate and one graphene edge
localized at the top of the frame. The obtained photocur-
rent map reveals two series of sinusoidal spatial oscilla-
tions (fringes) rather than sharply peaked hot spots seen
in Fig. 2b. These smooth oscillations can be explained if
we recall that in an h-BN slab of small enough thickness d
the HPPs are quantized into discrete eigenmodes with in-
plane momenta kl = tan θ(πl + φ)/d where l = 0, 1, 2, . . .
is the mode index and φ ∼ 1 is a phase shift that depends
on the boundary conditions (see Fig. 3b and e.g., Ref. 31).
The collimated rays seen in Fig. 2d can be understood as
coherent superpositions of many such modes emitted by
the split-gate. On the other hand, in the photocurrent
microscopy the role of the HPP emitter is played by an
AFM tip, which apparently couples predominantly to the
l = 0 mode.32 The horizontal fringes in Fig. 2c are due
to interference of l = 0 polariton waves launched by the
tip, which is backreflected at the graphene edge leading
to a fringe spacing corresponding to half the wavelength
0100200σ(nm)1000110012001300140015001600f/c(cm−1)−200−1000100200Position(nm)Absorption(a.u.)1000110012001300140015001600f/c(cm−1)0200400600800Responsivity(mV/W)k⊥ab1428cm−1gap500nmλp−2500250IPC−IBG(pA)100nm1400cm−11515cm−11560cm−1Ecd 4
Figure 3 Analytic calculation of absorption spectra. a Momentum distribution provided by a metallic split gate with 100 nm
gap width. The associated electric field profile is shown in the inset. b HPP frequency dispersion curves showing discrete eigen-
modes l = 0, 1, 2, ... calculated for the full system of a metal gate, 50 nm h-BN, graphene and 55 nm h-BN on top. c Real space
absorption profile obtained from the analytic calculations. d The resulting absorption spectrum calculated in k-space of the total
power absorbed inside the graphene.
fringe spacing is λp. We do not observe HPPs launched
by the tip and reflected by the gap as there are no vertical
fringes with half the wavelength visible. This interpre-
tation enables us to extract λp from the fringe spacing
in the photocurrent maps. For example, at 1428 cm−1
is λp = 460 ± 5 nm, which agrees with the calculated
wavelength of 455 nm. The observed fringes parallel to
the gap on the left of Fig. 2c confirm that phonons are
indeed launched by the split gate and are converted into
photocurrent.
In order to better understand which parameters de-
termine the absorption spectrum we also modelled the
system analytically.31 In this model we approximate the
electric fields at the bottom surface of the h-BN by the
electric field inside the gap −a < x < a cut along the
y-axis in a perfectly conducting plane z = 0 in vacuum:
Ex(x, z = 0) = V0
π
Re
1√
a2 − x2
.
(2)
Here V0 is the voltage across the gap, which is propor-
tional to the field of the incident beam (see inset Fig. 3a).
The Fourier transform of Ex is given by (Fig. 3a)
eEx(k) = V0J0(ka),
(3)
where J0(z) is the Bessel function of the first kind.
We then compute the field inside the h-BN-graphene
layered structure using the transfer matrix method
(Fig. 3b) by assuming that Eq. 3 represents the field inci-
dent on the structure from the bottom. The assumption
is not strictly self-consistent because it does not account
for the backreaction of h-BN on the split-gate, in the form
Figure 4 Comparison between experiments, simulation
and analytic model. a Responsivity spectra of the investigated
devices. b Comparison of the peak frequency of the devices
obtained experimentally, by FDTD simulation, by the Galerkin
method (see supplement) and using the analytic model. Where
dt and db are the top and bottom thicknesses of the h-BN re-
spectively and a is the gap width. The parameters α and β are
extracted from the analytic model (see supplement). c Absorp-
tion spectra calculated analytically. d Normalized peak values
as a function of the detuning (see text) of its frequency. The
gray dashed-dotted line is a guide to the eye.
λp = 2π/k0 of this mode.32 The vertical fringes are due
to interference of the l = 0 partial wave launched at the
split gate8 with the tip launched waves. In this case the
−0.50.00.51.01.5J0(ka)−50050Position(nm)01V050100150k(×106m−1)1300140015001600f/c(cm−1)l=012E2−200−1000100200Position(nm)Absorption(a.u.)01Absorption(a.u.)abcd1400150016000.00.20.40.60.81.0Responsivity(V/W)×204α(dt+db)+βa14001500160017001800f/c(cm−1)ExperimentFDTDGalerkinAnalytic140015001600f/c(cm−1)012Absorption(a.u.)020406080Detuning(cm−1)0.00.51.0acdb of the HPP rays reflected back to z = 0 plane. A more
accurate but also more complicated model that obeys the
self-consistency condition is presented in Supplementary.
Unfortunately, that latter model can no longer can be
solved in a closed form. This is why here we use the sim-
plified analytical model to illustrate the main features of
the studied phenomena. We calculate the Fourier trans-
form of the in-plane electric field at the graphene surface
as a function of momentum k. The power absorbed in
the graphene is then expressed as (Fig. 3d):
Z
eEx(k)2dk ,
(4)
p = 1
4π
Re σ(ω)
where σ(ω) is the sheet conductivity of graphene at
the laser frequency ω. Here, for simplicity, we neglect
the spatial variation of σ near the pn-junction as the hot
spots responsible for the absorption are typically found
some distance away from the junction (Fig. 3c).
From this model description it becomes clear that the
characteristic momentum k ∼ 1/a provided by the junc-
tion plays a crucial role for the frequency of maximum
absorption. By calculating the inverse Fourier transform
of eEx(k) we are able to also calculate the spatial profile
of the electric field Ex(x) and thus the spatial absorption
profile (Fig. 3c). The validity of our analytic model can
be seen by the close resemblance between the analytically
calculated and FDTD simulated frequency dependent ab-
sorption profile (compare Fig. 2b and 3c).
From this model, the origin of the peak in the spectral
photoresponse is the competition between the following
two processes: the dielectric losses in the h-BN and the
(finite) momentum provided by the junction. First, the
losses in the h-BN contribute mainly to the low frequency
side due to the imaginary part of the permittivity which
peaks at the TO phonon frequency (1360 cm−1). The im-
pact of this effect on the device responsivity is enhanced
by the obtuse angle with which the HPPs are launched,
as the intensity of the HPPs reaching the graphene be-
comes smaller with travelled distance. Second, the mo-
mentum provided by the junction is responsible for the
responsivity decay on the high frequency side. Interest-
ingly both of these effects depend on the h-BN thickness
and on the gap size.
It is important to note that the
impact of the h-BN thickness is twofold since it is also
changing the HPPs dispersion.1 Thus by choosing the ge-
ometrical parameters of the device, the device thickness
and gap width, it is possible to tune the frequency as
well as amplitude of the photocurrent maximum within
the reststrahlen band of h-BN.
In order to show this tunability, and to validate the
physical model, we fabricated different device geometries.
Experimental responsivity spectra of the different devices
are plotted in Fig. 4a. All the spectra were measured us-
ing the gate voltage configuration exhibiting the highest
responsivity for the respective device. They exhibit dif-
ferent peak frequencies and responsivities and the trend
is well captured by the analytically calculated absorp-
5
tion spectra presented in Fig. 4c. The peak frequencies
are plotted in Fig. 4b as a function of the relevant geo-
metrical parameters of the system. These are the stack
thickness d = dt + db, where dt and db are the bottom
and top h-BN thicknesses (Fig. 1c), and the split gate
gap width 2a. The tunability of the investigated devices
spans over 60 cm−1 and the peak frequencies obtained us-
ing both the FDTD simulations and the analytic model
match the experimental ones. In Fig. 4d we plot the re-
sponsivities of the measured devices normalized to the
highest one as a function of the peak frequencies. We
find that the responsivity follows a bell shaped curve
(Fig. 4d) suggesting that the optimal geometry would
lead to a peak frequency where there is a trade off be-
tween low losses and high launching efficiency. Using the
analytic model we obtain a theoretical dependence of the
frequency and of the absorbed power as a function of the
stack thickness and the gap size (see supplement).
In this simple analytic model the frequency dependence
of the gap voltage V0 (eq. 2) is neglected. Thus, the cou-
pling between the far-field light and the split gate is not
taken fully into account.33 This leads to some discrep-
ancy between simple theory and experiment. However,
the mentioned above more sophisticated model based on
the Galerkin method (see supplement) is in much bet-
ter agreement with the experimental results and FDTD
simulations (Fig. 4b).
Finally, we will address the photodetection device
performance. We remark that the device operates at
leading to an extremely low noise level (∼
zero bias,
√Hz) from which we estimate a noise equivalent
4 nV/
√Hz (see methods). From our
power (NEP) of 26 pW/
simulations we found that the active area is about
2.5 µm2, i.e., only 2.5% of the device area. Thus, the
device can be easily scaled to smaller dimensions, with
the potential to enhance the performance by another fac-
tor of 40 because the total device resistance would be
decreased and thus the Johnson-Nyquist noise would de-
crease as well leading to a lower NEP. Current state-
of-the art detectors based on other technologies are de-
scribed in refs. 34,35. At room temperature typically sil-
icon bolometers are used. Our detectors can be further
optimized to have similar detectivity as silicon bolome-
ters, but offer several distinct advantages:
it allows a
smaller pixel size, higher operation speed and simpler
fabrication as no suspension of the device is necessary.
Our novel nano-optoelectronic infrared detectors oper-
ate at room temperature, are highly efficient, and can be
used for a wide range of on-chip sensing applications.
METHODS
Sample fabrication
Noise equivalent power (NEP) estimation
6
All
the stack elements (top and bottom h-BN and
graphene) are mechanically cleaved and exfoliated onto
freshly cleaned Si/SiO2 substrates. First the selected top
h-BN is detached from the substrate using a PPC (poly-
propylene carbonate) film and is then used to lift by Van
der Waals forces the graphene and the bottom h-BN con-
secutively. The as-completed stack is released onto the split
gate. The split gate electrodes are prepared by lithography,
titanium (5 nm)/gold (30 nm) evaporation and focus ion beam
irradiation to create the gap. The source and drain electrodes
mask is designed in a AZ-5214 photoresist film by laser lithog-
raphy and is exposed to a plasma of CHF3/O2 gases to par-
tially etch the stack. The graphene is finally contacted by the
edges by evaporating titanium (2 nm)/gold (30 nm) and lift
off in acetone. The recipe used for making those contacts is
detailed in ref. 10.
Measurements
The device is illuminated by a linearly polarized quantum
cascade laser with a frequency tunable from 1000 to 1610
cm−1. The device position is scanned using a motorized xyz-
stage. The laser is modulated at 128 Hz using a chopper and
the current at the junction is measured using a current pre-
amplifier and lock-in amplifier. The polarization of the light
is controlled using a ZnSe wire grid polarizer. The light is
focused using ZnSe lenses with a numerical aperture of ∼ 0.5.
The power for each frequency is measured using a thermal
power meter and the photocurrent spectra are normalized by
this power to calculate the responsivity.
∗ These authors contributed equally
† [email protected]
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We calculate a NEP given by N EP = Snoise/Rinternal =
√Hz where Snoise is the voltage noise and Rinternal
26 pW/
is the internal responsivity. Because graphene pn-junction
photodetectors operate at zero bias the electrical noise is of
thermal Johnson-Nyquist type given by Snoise = √4kBT R =
√Hz. Where kB is the Boltzmann constant, T = 300 K
4 nV/
and R = 1 kΩ is the resistance for which the calculated
NEP is minimum corresponding to a carrier concentration
of n = 0.2 × 1012 cm−2. The internal responsivity is given by
Rinternal = Rexternal/η = 150 V/W where Rexternal = 1 V/W
is the experimental responsivity and η = Aabs/Aspot = 0.5%
the percentage of absorbed light. Aspot = 491 µm2 is the laser
spot area and Aabs = σW = 2.5 µm2 is the active area where
σ = 250 nm is the absorption cross section obtained by FDTD
simulations and W = 10 µm is the width of the device.
Simulations
The full wave simulations were performed using Lumeri-
cal FDTD. The frequency dependent permittivity of the h-
BN was taken from ref. 1. The optical conductivity of the
graphene was calculated using the local random phase ap-
proximation at T = 300 K with a scattering time of 500 fs. For
each device the appropriate Fermi energy was simulated (see
Supplement), however this did not influence the results signif-
icantly. In the simulations the Fermi energy of the graphene
is spatially constant (see the comment after eq. 4) but fre-
quency dependent. A plane wave source was used and the
absorption cross section was calculated by normalizing to the
incident power. For simplicity the calculated absorption does
not take into account the cooling length of the graphene nor
the carrier density profile.
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16 Yao, Y. et al. High responsivity mid infrared graphene
14 Yan, J. et al. Dual-gated bilayer graphene hot-electron
7
the Mineco grants Ramón y Cajal (RYC-2012-12281) and
Plan Nacional (FIS2013-47161-P and FIS2014-59639-JIN),
and support from the Government of Catalonia trough the
SGR grant (2014-SGR-1535). Furthermore, the research lead-
ing to these results has received funding from the European
Union Seventh Framework Programme under grant agree-
ment no.696656 Graphene Flagship, and the ERC starting
grant (307806, CarbonLight). Y.G. and J.H. acknowledge
support from the US Office of Naval Research N00014-13-1-
0662. P.A.-G. acknowledges funding from the Spanish Min-
istry of Economy and Competitiveness through the national
projects FIS2014-60195-JIN.
AUTHOR CONTRIBUTIONS
A.W. and F.H.L.K. conceived the experiment. A.W. and
R.P. performed the far-field experiments, analysed the data
and wrote the manuscript. A.W. performed the FDTD sim-
ulations. A.W. and P.A.-G. performed the near-field exper-
iments. D.D. and Y.G. fabricated the devices. M.B.L. and
S.N. assisted with measurements, interpretation and discus-
sion of the results. J.-S.W. and M.M.F. developed the ana-
lytic model. K.W. and T.T. synthesized the h-BN. All au-
thors contributed to the scientific discussion and manuscript
revisions.
COMPETING FINANCIAL INTERESTS
R.H. is co-founder of Neaspec GmbH, a company produc-
ing scattering-type scanning near-field optical microscope sys-
tems such as the ones used in this study. All other authors
declare no competing financial interests.
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22 Lemme, M. C. et al. Gate-activated photoresponse in a
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detectors with antenna enhanced photocarrier generation
and collection. Nano Lett. 14, 3749 -- 3754 (2014).
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temperature pyroelectric bolometers with ultrahigh tem-
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(2016).
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Detector on LiNbO 3. Adv. Optical Mater. 1600723 (2017).
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McEuen, P. L. Photo-Thermoelectric Effect at a Graphene
Interface Junction. Nano Lett. 10, 562 -- 566 (2010).
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14, 901 -- 907 (2014).
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Imaging Applications. Nano Letters 15, 7211 -- 7216 (2015).
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other two-dimensional materials and hybrid systems. Na-
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Focusing of surface phonon polaritons. Appl. Phys. Lett.
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sponse of Graphene. Nano Letters 14, 6374 -- 6381 (2014).
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netothermoelectric Transport Measurements of Graphene.
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sulators are tunable waveguides for hyperbolic polaritons.
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ACKNOWLEDGEMENTS
It is a great pleasure to thank Klaas-Jan Tielrooij for many
fruitful discussions. This work used open source software
(www.matplotlib.org, www.python.org, www.povray.org).
F.H.L.K. acknowledges financial support from the Span-
ish Ministry of Economy and Competitiveness, through the
"Severo Ochoa" Programme for Centres of Excellence in R&D
(SEV-2015-0522), support by Fundacio Cellex Barcelona,
Supplementary Material: Electrical detection of hyperbolic
phonon-polaritons in heterostructures of graphene and boron nitride
i
I. EXPERIMENT
A. Electrical device characterization
Electrical properties of the pn junction devices are first characterized by recording the drain current under a bias voltage of
5 mV by sweeping simultaneously the two gate voltages (Vg1, Vg2) from −3 to 3 V. From this measurement we obtain the gate
dependence of the device resistance when the entire graphene sheet is uniformly doped. The experimental curve is fitted using
the following equation:
eµpn2
1
Rtot = Rc +
0 + (0Vg/e)2
where Rc is the sum of both contact resistances, e is the elementary charge, µ is the carrier mobility, 0 is the vacuum
permittivity, is the DC permittivity of h-BN, n0 is the residual doping at the charge neutrality voltage and Vg is the gate
voltage shift with respect to the charge neutrality voltage. In the case of the device in Fig. 1 of the main text the fit leads to
Rc = 1500 Ωµm and µ = 30963 cm2 V−1 s−1. The gate dependence map of the device resistance shown in Fig. S1a is measured
by sweeping both gates independently in the range (−3 V, 3 V). The cross pattern is a clear sign of independent and stable
gate efficiency and allows the access to the four doping configurations: pn, np, pp' and nn'.
(s1)
(s2)
Figure S1 Gate dependence of resistance and photocurrent and Fermi energy dependent absorption. a Gate dependence
of the device resistance. b Gate dependence of the internal responsivity at laser frequency 1515 cm−1. c Simulated normalized ab-
sorption at 1515 cm−1 for Vg1 = −Vg2.
B. Photocurrent generation
The photoresponse is probed by focusing the laser beam on the junction and by sweeping the two gate voltages from −3 V
to 3 V without biasing the device. The obtained gate dependence of the responsivity exhibits a 6 fold pattern, a signature
of the photo-thermoelectric effect in the photovoltage generation mechanism (Fig. S1b). A maximal internal responsivity of
about 150 V/W is measured in both pn and np configurations respectively at 1515 cm−1 for (Vg1 = 1.2 V, Vg2 = −0.21 V) and
(Vg1 = −0.06 V, Vg2 = 1.26 V) which correspond to a fairly low carrier concentration of about 0.29 × 1012 cm−2 on one side
of the junction and 0.23 × 1012 cm−2 on the other side. At these optimal doping levels 0.112 eV < 2EF < 0.126 eV is always
lower than the energy range of the reststrahlen band (0.168 eV < EL < 0.198 eV) meaning that the HPPs absorption by the
graphene is never limited by Pauli blocking. In order to be quantitative we simulated the graphene absorption at 1515 cm−1
(see main text) for a symmetric doping in the two regions of the junction variable in the range (0 < EF < 0.15 eV). As shown
on Fig. S1c the absorption only drops by 10% at the doping where the thermoelectric effect is the most efficient and by 50%
for the highest doping level explored (EF = 0.136 eV).
C. Device performance
In Fig. S2a and b we present respectively the gate dependence of the voltage noise and of the logarithm of the noise equivalent
power (log(NEP)). The voltage noise of Johnson-Nyquist type is extracted from the gate dependence resistance map using:
Snoise =p4kBT R
−3−2−10123VoltageGate1(V)−3−2−10123VoltageGate2(V)20002500Resistance(W)−3−2−10123VoltageGate1(V)−3−2−10123VoltageGate2(V)−100−50050100Int.Responisivity(V/W)0.000.050.100.15EF(eV)0.000.250.500.751.00Norm.absorption(a.u.)abc ii
The gate dependence of the NEP is calculated using:
NEP = Snoise/Rinternal
(s3)
Here Snoise is the voltage noise and Rinternal is the internal responsivity. A minimal value of NEP = 26 pW/√Hz is obtained
for Vg1 = 1.35 V and Vg2 = −0.48 V, a slightly different gate configuration than for the maximal responsivity. We have also
measured the device time response τ using the quantum cascade laser (Block Engineering LaserScope) as a pulsed light source.
In the experiment we record simultaneously the beam reflection on the sample with a MCT detector and the photocurrent of
the device. Using a fast oscilloscope (Teledyne Lecroy HDO6104 1GHz High Definition Oscilloscope) to measure the MCT's
output we get the laser pulse width τL = 0.24 µs (Fig. S2c). The photoresponse of the device is amplified with a current
amplifier (Femto DLPCA-200) and measured with the oscilloscope. In Fig. S2c we plot two line traces of the photocurrent
obtained using two current amplifiers with two different cutoff frequencies of 200 kHz and 500 kHz. These results clearly show
that we are limited by the cutoff frequency of the amplifier thus we only get an upper value of the time response τ = 2 µs.
Figure S2 Gate dependence of resistance and NEP and photocurrent response time. a Gate dependence of the Johnson
Nyquist noise. b Gate dependence of the log(NEP). c Measurement of the device time response. Laser pulse reflection (red). Pho-
tocurrent measured using a current amplifier with 500 kHz cutoff frequency (green). Photocurrent measured using a current ampli-
fier with 200 kHz cutoff frequency (blue).
D. Graphene absorption
In Fig. S3b we show the frequency dependent absorption profile of the HPPs by the graphene σ(x)E(x)2 simulated using
the analytic model. The intensity of the electric field E(x)2 and the optical conductivity of the graphene pn junction σ(x)
in the case of symmetric doping (EF = ±0.1 eV) are respectively presented in Fig. S3a and S3c. This moderate doping level
is the onset of the Pauli blocking, thus the absorption is slightly reduced in the n and p region of the junction but remains
unchanged in the intrinsic part of the junction. In Fig. S3d we compare the absorbed power spectra of uniformly doped graphene
(EF = 0.1 eV) and of graphene pn junction (EF = ±0.1 eV). We observe an extremely weak shift toward the high frequency in
the case of the junction. This is explained by the higher weight of the HPPs absorption in the intrinsic part of the junction
which takes place at higher frequency.
E. Photoresponse tunability
Our analytic model has revealed the effect of two relevant geometrical parameters, the stack thickness (dt + db) and the split
gate gap width (2a), on both the frequency and the maximum absorbed power. In Fig. S4 we show these dependences for a
large set of geometries: 10 nm < dt + db < 150 nm and 30 nm < 2a < 150 nm. The frequency dependence has the shape of a
sloping plane of equation:
f /c(dt + db, 2a) = α(dt + db) + β2a + 1405
(s4)
Where α = 0.428 × 109 and β − 0.292 × 109.
small.
The map of the absorbed power reveals that the optimal geometry is when both the gap width and sample thickness are
−3−2−10123VoltageGate1(V)−3−2−10123VoltageGate2(V)345Vnoise(nV/√Hz)−3−2−10123VoltageGate1(V)−3−2−10123VoltageGate2(V)−11−10−9log(NEP)0123456Time(µs)0.000.250.500.751.00Norm.photocurrent(a.u.)200kHz500kHzLaserreflectionabc iii
Figure S3 Position dependent absorption in the graphene. a Frequency dependent electric field profile E(x)2 simulated
with the analytic model. b Simulated frequency dependent absorption profile σ(x)E(x)2. The dashed dotted line indicates where
the maximum photocurrent responsivity is observed experimentally. c Normalized optical conductivity of the graphene σ(x). The
doping level is symmetric in the p and n region EF = ±0.1 eV. d Simulated spectra of the absorbed power in the case of uniformly
doped graphene (EF = 0.1 eV) (blue) and in the case of the pn junction (symmetric doping EF = ±0.1 eV).
Figure S4 Analytic model. a Geometrical dependence of the peak frequency from the analytical model. b Geometrical depen-
dence of the absorbed power from the analytical model.
−200−150−100−50050100150200140015001600f/c(cm−1)−200−150−100−50050100150200140015001600f/c(cm−1)−200−150−100−50050100150200Position(nm)0.00.20.40.60.81.0σ(πe2/(2h))13001350140014501500155016001650f/c(cm−1)0.00.20.40.60.81.0Abs.(a.u.)UniformJunction50100150200Width(nm)50100150200Height(nm)1380139514101425144014551470f/c(cm−1)50100150200Width(nm)50100150200Height(nm)306090120150180210240Absorbedpower(a.u.)ab No. dt (nm) db (nm) 2a (nm) dgate (nm) ωexp (cm−1) ωsim (cm−1) EF (meV)
1
2
3
4
1464
1515
1447
1505
1490
1520
1460
1512
70
100
150
60
15
30
15
30
3
55
9
17
30
50
27
60
72
52
37
82
iv
TABLE S1 Parameters of the experimental devices. The first column is the device number. The dimensions dt, db, and 2a are
indicated in Fig. S5. Variable dgate is the thickness of the Au split-gate. Frequencies ωexp and ωsim are the positions of thermocur-
rent maxima in, respectively, experiment and numerical simulations. EF is the Fermi energy of graphene.
F. Device parameters
II. THEORY
A. The model geometry and the thermocurrent
The geometry of the device under consideration is illustrated in Fig. S5. It consists of a graphene layer sandwiched between
two hBN slabs of thickness dt and db, a thin metallic film (split-gate) containing a gap of width 2a, and a dielectric substrate
(SiO2). The coordinate system is shown in Fig. S5, where the middle of the gap is at x = 0. We assume that the sheet
conductivity σ(ω, x) of graphene is a known function of frequency ω and position x.
In the experiment the device is illuminated by an infrared beam that creates a distribution of the electric field Eg = E(z = db)
in graphene (here and below the factors e−iωt are omitted). The corresponding Joule heating
(s5)
causes an increase of the electron temperature T (x) in graphene. The gradient of T (x) generates a dc thermocurrent j, which
is measured. The problem of computing the thermophotocurrent in a graphene p-n junction has been addressed in prior
literatureS1. The change of temperature ∆T is shown to be proportional to P (ω)S1, where
p(x, ω) = Re e σ(ω, x)Eg(x, ω)2
P (ω) =
p(x, ω)dx.
(s6)
Z ∞
−∞
Regardless of the proportional coefficient, the frequency dependence of the thermophotocurrent is controlled by the total Joule
heating power P (ω). The remainder of this note is devoted to computing this quantity.
The gold split-gate can be regarded as an antenna illuminated by the laser. The illumination induces a voltage difference V0
across the gap. Because of retardation effects, the voltage V0 is actually a function of frequency ω, i.e., V0(ω). To obtain V0(ω),
B. Split-gate as an antenna
Figure S5 Device schematics.
ε0tophBNbottomhBNgraphenedtdb2aεsεsεszx we approximated the split-gate by a slotline made of a perfect metal. The methods for electromagnetic problems of slotlines
are well developed.S2,S3 We follow the approach in Ref.S4, which dealt almost the same geometry as in our case.
Suppose the system is illuminated by a P -polarized plane wave, that is, by an incident wave whose electric field is in the x -- z
plane and whose magnetic field is along the y-axis.
The voltage V0 is related to the electric field by
V0(ω) =
dxEs(x, ω) ,
(s7)
where Es(x) ≡ Ex(x, 0) is the field inside the slot (−a < x < a). We denote vacuum and hBN as Medium 0 and Medium 1,
respectively. In Medium n the eigenmodes are plane waves with tangential momenta q and z-axis momenta ±kz
n(q, ω) where
v
(s8)
(s9)
(s10)
(s11)
(s12)
aZ
−a
r
n(q, ω) =
kz
n (ω)k2
ε⊥
0 − ε⊥
n (ω)
n(ω) q2 ,
εz
Im m kz
n ≥ 0 .
We obtain the desired integral equation for the electric field on the slotS4:
aZ
where the Green function is defined by
−a
and in the Fourier domain,
Function r = r(q, ω), which is given by
0
G(x − x, ω)Es(x
0) = −2i'0(q0)eiq0x , −a < x < a .
dx
G(x, ω) =
.
eiqx
2πi
(cid:21)
1 − r(q, ω) + '2(q, ω)
(cid:21)
(cid:20)
'1(q, ω) 1 + r(q, ω)
Z dq
(cid:20)
ieG(q, ω) =
'1(q, ω) 1 + r(q, ω)
(cid:0)2r10 − e−iαt(cid:1)
1 − r(q, ω) + '2(q, ω)
r10 − rg
.
,
αb,t = 2kz
1 db,t ,
e−iαt − rgr10
r = eiαb
represents the total reflection coefficient of a wave launched upward from the gate. The coeffecients r10 and rg describe the
reflections due to the hBN-vacuum interface and graphene. They are expressed as
'n(q, ω) ≡ ε⊥
(s13)
,
.
r10(q, ω) = '0 − '1
'0 + '1
n
kz
n
The field Eg(x) in the graphene plane are given by
rg(q, ω) =
2πσ(ω)
ω
'1(q, ω) + 2πσ(ω)
ω
.
Z dq
2π
Eg(x, ω) =
eiqx eikz
1 db − r(q, ω)e−ikz
1 db
1 − r(q, ω)
eEs(q) ,
(s14)
(s15)
where the tilde denotes the Fourier transform in x.
C. Variational method for the field distribution
The electric field Eg(x, ω) can be obtained as a certain quadrature over the field Es(x, ω) on the slot, as shown in Eq. (s15).
Thus, the brunt of the calculation is to compute Es(x, ω). The standard approach is the Galerkin method where one seeks
Es(x, ω) as a series of basis functionsS2
∞X
k=0
Es(x, ω) =
ck(ω)fk(x) ,
fk(x) =
1√
a2 − x2 Tk
(cid:17) , −a < x < a ,
(cid:16) x
a
(s16)
vi
Figure S6 Power due to the Joule heating calculated using the variational method for the field distribution outlined in this sup-
plement.
where Tl(z) = cos(l arccos z) is the Chebyshev polynomial of degree l. The advantages of working with the Chebyshev polyno-
mials are two-fold, the fast convergence and the closed-form representation of the field in the Fourier domain:
eEs(q, ω) = π
∞X
(−i)kck(ω)Jk(qa) ,
V0 = eEs(0) = πc0(ω) ,
(s17)
(s18)
(s19)
where Jν(z) is the Bessel function of the first kind. The coefficients cn(ω) is given byS4
k=0
c(ω) = −2i'0(q0)M−1e ,
where the matrix M(ω) has the elements
Mmn(ω) = (−1)m−n
∞Z
0
J2n(qa)J2m(qa)eG(q, ω)dq
and the column vector c(ω) consists of the coefficients c0(ω), c2(ω), . . . The column vector e has a single nonzero entry e0 = 1
√1 − z2. In practice, in order
because Chebyshev polynomials T0(z) ≡ 1 and Tk(z), k 6= 0, are orthogonal with the weight 1/
to solve Eq. (s18) we have to truncate M(ω) to a finite order. To find how large N needs to be, we can monitor the coefficients
ci as N is incremented until they converge to within the desired tolerance. From our simulations we found that for computing
s (x) as many as N ∼ 10 basis functions may be necessary. However, for the calculation of the gap
the accurate field profile Ex
voltage N = 1, i.e., the single-mode approximation (SMA) is typically sufficient.
Figure S6 shows the power due to the Joule heating for Device 1-4, given by the variational method.
SUPPLEMENTARY REFERENCES
∗ These authors contributed equally
† [email protected]
[S1] Gabor, N. M. et al. Hot carrier-assisted intrinsic photoresponse in graphene. Science 334, 648 -- 52 (2011).
[S2] Garg, R., Bahl, I. & Bozzi, M. Microstrip Lines and Slotlines (Artech House, Boston, 2013).
[S3] Bouwkamp, C. J. Diffraction Theory. Rep. Prog. Phys. 17, 35 (1954).
[S4] Popov, V. V., Polishchuk, O. V. & Nikitov, S. A. Electromagnetic renormalization of the plasmon spectrum in a laterally
screened two-dimensional electron system. JETP Letters 95, 85 -- 90 (2012).
1350140014501500155016001650f/c(cm−1)0.00.20.40.60.81.01.2Absorption(a.u.) |
1711.00988 | 1 | 1711 | 2017-11-03T01:06:12 | Electrical-driven Plasmon Source on Silicon based on Quantum Tunneling | [
"physics.app-ph"
] | An efficient silicon based light source presents an unreached goal in the field of photonics, due to Silicons indirect electronic band structure preventing direct carrier recombination and subsequent photon emission. Here we utilize inelastically tunneling electrons to demonstrate an electrically driven light emitting silicon based tunnel junction operating at room temperature. We show that such a junction is a source for plasmons driven by the electrical tunnel current. We find that the emission spectrum is not given by the quantum condition where the emission frequency would be proportional to the applied voltage, but the spectrum is determined by the spectral overlap between the energy dependent tunnel current and the modal dispersion of the plasmon. Experimentally we find the highest light outcoupling efficiency corresponding to the skin depth of the metallic contact of this metal insulator semiconductor junction. Distinct from LEDs, the temporal response of this tunnel source is not governed by nanosecond carrier lifetimes known to semiconductors, but rather by the tunnel event itself and Heisenbergs uncertainty principle. | physics.app-ph | physics | Electrical-driven Plasmon Source on Silicon based on
Quantum Tunneling
Hasan Göktaş1,2, Fikri Serdar Gökhan3, Volker J. Sorger1*
1Department of Electrical and Computer Engineering, George Washington University,
Washington, D.C. 20052, USA
2Department of Electrical and Electronic Engineering, Harran University, Sanliurfa, 63000,
3 Department of Electrical and Electronic Engineering, Alanya Alaaddin Keykubat University,
Turkey
Kestel, Alanya, Antalya, Turkey
*Email: [email protected]
An efficient silicon-based light source presents an unreached goal in the field of photonics,
due to Silicon's indirect electronic band structure preventing direct carrier recombination
and subsequent photon emission. Here we utilize inelastically tunneling electrons to
demonstrate an electrically-driven light emitting silicon-based tunnel junction operating at
room temperature. We show that such a junction is a source for plasmons driven by the
electrical tunnel current. We find that the emission spectrum is not given by the quantum
condition where the emission frequency would be proportional to the applied voltage, but
the spectrum is determined by the spectral overlap between the energy-dependent tunnel
current and the modal dispersion of the plasmon. Experimentally we find the highest light
outcoupling efficiency corresponding to the skin-depth of the metallic contact of this metal-
insulator-semiconductor junction. Distinct from LEDs, the temporal response of this tunnel
source is not governed by nanosecond carrier lifetimes known to semiconductors, but rather
by the tunnel event itself and Heisenberg's uncertainty principle.
Keywords
Light Source, Plasmon, Optoelectronics, Silicon, Quantum Tunneling, Electroluminescence,
Grating
With the emergence of photonic integration [1] the challenges a) to create light from silicon and
b) to realize electronically-compact photonics have delayed the anticipated introduction of
photonics into electronic consumer products [2]. While the diffraction limit of light has been
surpassed using polaritonic modes [3] demonstrating device functionality such as modulation [4],
light emission [5,6], detection [7], and tunable metasurfaces [8], the search for an electrically-
driven silicon-compatible light source operating at or above room temperature is yet outstanding.
While Silicon is capable of light emission, explored devices and emission mechanisms are
challenged by operation instability and efficiency [9]. As a result, the light source either requires
hetero-material integration, flip-chip bonding, or must be considered off-chip altogether [10-13].
Other source-related challenges include temporal effects of the gain medium; with the
spontaneous emission lifetime of semiconductors being about nanoseconds, any LED is limited to
modulation rates of a ~GHz. The time response of a laser on the other hand is limited by the gain
relaxation oscillations, but is still limited by optical non-linear gain-compression (gain saturation)
effects to the GHz-range [5]. While the Purcell effect accelerates the spontaneous emission
process [14] raising the modulation frequency of a LED [15], it also reduces the laser threshold
via improving the pump efficiency by increasing the spontaneous emission factor, β [16, 17]. Yet
plasmon lasers require an inherently higher threshold power than photonic counterparts due to the
lossy metals involved [18], and (in)homogeneous broadening effects. This is physically logical,
since any polaritonic (matter-like) mode increases the loss of the cavity. Thus, if a nanometer
small source is desired, high optical loss is unavoidable. Lastly, any on-chip light source should
be electrically driven; this requires electrical contacts, which hinder integration density if any
photonic mode is used due to the avoidance of optical losses. Taken together, the physical
mechanism of using free-carrier recombination across a semiconductor band gap for light
emission bears fundamental drawbacks limiting on-chip sources. As such the demand for a
silicon-based, nanometer small, potentially fast-modulatable, electrically-driven on-chip light
source operating at room temperature remains unmet to date.
A possible option around such source-related bottlenecks is to turn to a different light creation
mechanism; let us consider quantum tunneling of an electron across an electrically biased barrier
(Fig. 1a,b). Here the electron can either tunnel elastically loosing energy to phonon modes, or
inelastically creating a photon. The probability of the latter has been predicted to reach 10% for
stimulated processes [19]. This mechanism is interesting for light sources for two reasons; a)
since the temporal response upper limit of an tunnel event is governed by Heisenberg's
uncertainty principle, the large optical energies of visible and NIR photonics demand sub ps-fast
response times, and b) if the final goal is to create a laser, the requirement for carrier population
inversion of the gain material could be simply met by biasing two Fermi seas against a doped
semiconductor; in a band diagram one then has 1024 cm-3 carriers from the metal residing above
the <1015-21 cm-3 carriers of the semiconductor Fermi level. If one is able to convert these 103-109
excess carriers into photons, a light source can be realized.
Indeed, biasing two Fermi levels against one another across a thin tunnel oxide (metal-insulator-
metal (MIM) shows faint light emission [20]. The emission observed through the 10-100's nm
thick top metal is expected to be miniscule, and is hence a poor indicator of the true internal
photon conversion efficiency of the tunneling process. While lowering the device to cryogenic
temperatures [21] or reducing the metal thickness in an ad-hoc manner shows small emission
improvements. Thus, the outstanding challenge is to understand the underlying light-creation
mechanisms based on inelastically-tunneling electrons. Moreover, the spectral observations from
[22] are inconsistent to other reports, and the originally anticipated quantum condition (Eemission =
hv = qVbias (1) [23], where v is the frequency, q the charge, Vbias the applied voltage bias, and h
Planks constant) is experimentally not validated [20,22,24,25]. The argument of a convolution
between the spectral-dependent tunnel current and the device-internal plasmon was made to
explain the deviation from (1), as further validated in results presented here [26].
Here we report on the demonstration of an electrically-driven, CMOS compatible, silicon-based
plasmon on-chip source based on inelastic electron tunneling operating at room temperature (Fig.
1). The source consists of a metal-insulator-(doped) semiconductor (MIS) tunnel junction of an
silicon-on-insulator (SOI) substrate, which supports a sub-wavelength plasmonic eigenmode [27].
We show that the in free-space detected photons originate from plasmons generated inside the
source, which are converted into photons via momentum matching facilitated by surface
roughness or a grating. Accessing the dense plasmonic modes hidden underneath the metal layer
via selective etching reveals high-field densities inside the device. We find an optimum top
contact thickness close to that of the skin depth of the junction metal [28]. Matching the emission
to free space via a sub-wavelength grating, we demonstrate a vertical surface-emitting source
with a 40 fold enhancement outcoupling relative to flat metal film. Using the thermionic emission
current with an added tunnel-barrier thickness-dependent current shows the possibility for 10's
GHz-fast direct modulation for sub 1-nanometer thin tunnel oxides. Given our measured
electroluminescence (EL) intensities, we estimate the wall-plug efficiency to be about half a
percentage (see supplementary material) [29].
Results
The underlying physical processes of this source are quantum mechanical elastic- and inelastic
electron tunneling across a barrier (Fig. 1a,b). In the elastic tunneling picture, a conduction
electron in doped silicon approaches a biased, thin oxide barrier. With each scattering event at
this barrier, there exists a finite probability that an electron will tunnel into the conduction band
of the metal counter-electrode, conserving electron kinetic energy. After tunneling, the hot
electron achieves thermal equilibrium with the electron sea via heat dissipation (Fig. 1a). Inelastic
electron tunneling, in contrast, does not conserve electron energy; instead, a photon or phonon is
created as the electron transfers to a lower energy state in the metal counter-electrode (Fig. 1b).
The dominance of elastic tunneling over inelastic tunneling determines the conversion efficiency.
The latter was predicted to occur with a probability of up to 10% when optimized for materials
and bias [23]. While this efficiency needs to be yet validated, its probability is proportional to the
photon density, which can be made dominant by introducing a cavity. Note, that the bound mode
of this MIS system is sub-wavelength, thus allowing for a nanoscale cavity enabling device
scalability. However, the cavity impact is not the aim of this work here, which focuses on
demonstrating a silicon-based tunnel junction, experimentally proving its light creating
mechanism while demonstrating device functionality.
The light source is comprised of a p-silicon substrate with a nanometer thin native oxide topped
of with noble metal electrode on a SOI substrate (Fig. 1c). Such a metal/low-dielectric/high-
dielectric structure supports a hybridized mode between a classical photonic waveguide and a
surface plasmon polariton when placed on a low-index substrate (Fig. 1d) [5, 30, 31]. This
geometry acting as an optical capacitor is able to confine light below the diffraction limit of light
down to (λ/20)2 at visible and NIR frequencies [30], while exhibiting a high electric field density
inside the oxide gap. This field density has an impact at the time response of the device as
discussed below. This mode has demonstrated Purcell Factors in the ten's to approaching hundred
[32] making it a candidate for quantum electrodynamics studies. Applying a bias at the junction
shows a surface emission that can be observed with the naked eye, or captured with a CCD
camera (Fig. 1e). This emission is a plasmon-to-photon converted output assisted by the top-
metal providing wavevector matching to free space, as discussed below.
Next, we show and discuss the observed electroluminescence when biasing the junction. Relating
the emission to band-diagram under bias we explain the internal physics and operation principle
of the source. The surface emission from the top metal (without a grating) is relatively weak, and
shows randomly distributed hot-spots originating from localized surface plasmons driven by
random current fluctuations [9]. The elastically tunneling electrons found spatially overlapping
with the high-field density of the high k-vector hybrid-plasmon mode. Thus, the only optical
mode to be excited is the hybrid plasmon polariton mode. These photon-plasmons leak through
the top metal experiencing losses. Upon reaching the sample surface (metal-air interface), they
form a surface plasmon polariton. The latter has high impedance to free-space, however, the grain
boundaries of the electron-beam evaporated metal film (RMSAu= 5-10 nm) add momentum to the
plasmons, and thus scatter into free space. As such the external conversion efficiency of these
MIS tunnel junction sources is understandably low and observed to be 10-5 or less [22, 23]. While
improvements in the outcoupling efficiency are an engineering challenge, we first turn our
attention to analyzing and validating the light creation mechanism.
The source' internal mechanism can be explained by a combination of the band diagram, tunnel
current, and subsequent conversion into plasmonic modes under different biasing conditions (Fig.
2a). Electrically the junction is equivalent to a capacitor with a parallel tunnel resistor. The
capacitor formed by the MIS stack has the three-known operation regimes from which
accumulation (negative bias) and inversion (positive bias) are of importance for tunneling. Under
forward bias to the metal, the semiconductor bands bend downwards (inversion) facilitating gate
tunneling leakage current (I2) from the metal to p-type silicon (Fig. 2a). Changing the bias
polarity results in upwards band-bending; here the accumulated holes tunnel across the
electrostatically-thinned oxide either elastic- and inelastically (I1, Fig. 2a). This asymmetry is key
leading to an accumulation-current magnitude that is significantly (~109) relative to the gate
tunneling leakage current I2 under inversion [supplementary information]. This explains our
observed emission from the junction under negative bias only (Fig. 2b). With applied bias voltage
the electric field and I1 rises, creating hot electrons leading to emission events that feed two
plasmonic mode asymmetrically [33]. Light emission originating from I1 feeds both the hybrid-
plasmon mode (via inelastic current tunneling) and the surface plasmon (via elastically tunneling
hot electrons) (Fig. 2a) [20, 34]. The hybrid plasmon mode inside the junction is hidden from
sight unless accessed otherwise (i.e. scattered out) [30]. These hybrid plasmons propagate
through the top metal from where they scatter into free space via momentum added by the metal
roughness.
Verifying the origin of the hypothesized photon emission process to the tunnel current, we obtain
the current-voltage (I-V) characteristics and relate it to the integrated EL (Fig. 2b). Fitting the I-V
curve to a tunnel current model gives a diode ideal factor of 1.35 corresponding to a tunnel oxide
thickness, tox, of 2.6 ± 0.4 nm, which is within the expected range of the oxide used (i.e. native
silicon oxide) [35]. Our results show that the I-V characteristic matches Fowler-Nordheim
tunneling models [34, supplementary material]. The DC tunneling current responsible from light
emission increases with applied bias voltage (Vbias) due to a higher electric field, which elevates
the field densities of the two plasmonic modes by way of creation of hot electrons and thus the
observed electroluminescence intensity (Fig. 2b). We find that both the current (measurement and
simulation) and corresponding EL intensity track each other well, thus verifying that the tunnel
current is indeed the origin for the plasmon creation. Note, each experimental data point
presented in Figure 2b is an average across 15 different devices in order to account for sample
variations. While the electric field across the tunnel oxide is high, the breakdown voltage for SiO2
is ~3 V/nm [36]. This matches our experiments in which devices above 8 volts are mostly
shorted. This also leads to a degraded light emission enhancement factor when comparing the
junction EL from a flat top metal with that when a grating was etched as discussed below in
Figure 3e.
The EL spectrum grows with voltage bias as expected, and shows two broad double-peak
lineshapes centered around 720 nm and 550 nm (Fig. 2c). The overall shape is not simply given
by the quantum condition E = hv = qVbias, but depends on the convolution of the spectrally
dispersive tunnel current density with that of the eigenmode of the system, namely the hybrid
plasmon mode [26]. The spectral power density depends on current-fluctuations leading to
plasmon creation; small fluctuations in the tunnel current lead to electric field fluctuations, which
in turn accelerate and decelerated electrical carriers acting as a plasmon source. As such the
spectral dispersion of the internal hybrid plasmon mode is material sensitive [26]. Following this
line of thought, our modeling confirms the experimentally observed spectral double peak with
exponential decaying emission intensity (Fig. 2c, see methods) [22, 26].
The plasmon generation takes place inside the junction feeding the junction's eigenmode. Thus,
we explore the exact location of the plasmon creation, which we hypothesize to be either inside
the tunnel oxide, or near the tunnel oxide inside the metal by physically accessing the mode via
selective etching into the structure using focused ion beam milling (Fig. 3) [30]. In addition, we
aim to increase the outcoupling efficiency, by thinning- down the emission-blocking top metal
layer, and further introduce a grating design to add momentum to facilitate plasmon-to-free-space
coupling discussed below. While MIM tunnel junctions are fundamentally limited in terms of out-
coupling efficiency by the metal, our MIS junction can, in general, be flipped up-side-down to
become a SIM and hence allowing for high normal surface emission. However, with our aim of
using this source as a CMOS-compatible source in SOI platforms such as coupling emission
vertically to waveguides or across interposers, we keep the underlying silicon layer at the bottom
for technological relevance and ease of integration [37]. Other applications, however may require
surface emitting sources such as lab-on-chip [38] and DNA sequencing or agent detection [39].
Considering a skin depth of about 30 nm for gold at visible frequencies, only 1.8% of the EL
reach the top of the device for metal thicknesses of ~100 nm. On the other hand, if the metal is
too thin, it resistive losses incur voltage drops, which diminishes the EL per applied voltage. The
question is whether the thinning the top metal results in higher emission brightness. Gradually
thinning the metal by a depth d, we find a linearly exponential EL increase matching the Beer-
Lamber law (see Methods, and region A, Fig. 3a,b). Until this point we thinned the metal on the
entire device pad area and utilized the aforementioned momentum matching from the metal
roughness [9, 22, 23]. In the limit of etching (removing) the entire pad, light creation would
reduce to zero as no tunnel junction is formed. However, if we etch only certain regions passing
through the light-creating oxide layer, the resulting sharp edges facilitated the EL to scatter to free
space by providing high wavevectors. On the other hand, one loses light creation at these areas
that were etched into the silicon (Region B, Fig. 3b). Thus, with outcoupling intensity in mind,
optimization becomes a function of grating fill-factor; an initial test for a 1:1 fill factor shows a
sharp drop for the case of etching deeply into the silicon (Region B, Fig. 3b). This is due to the
lost photon creation and possible parasitic losses introduced by the Gallium beam doping from
the focused-ion-beam (FIB) milling process used, explaining the roll-off (d > 150 nm, Fig. 3b).
Another reason for the weak light emission intensity is attributed to the fact, that both the hybrid
photon plasmon and the surface plasmon modes are intrinsically nonradiative [40], because a)
their relative wavevector is approximately one order of magnitude different, and b) both mode's
wavevectors are larger (at least 2x) compared to that of free-space [41]. However, the maximum
output enhancement (33x) of the etched regions versus the metal pad no grating (MPNG), is
observed when the metal is not entirely removed, but about 20-30 nm of metal remains (Fig.
3a,b).
Next, we investigate the outcoupling efficiency of a grating and compare it with that of the
thinned metal film (Fig. 3c). In order to improve the out-coupling ratio and gaining further inside
into the Silicon-SPP light source, we etched selective gratings into the device accessing the
hybrid-plasmon-mode and facilitating coupling into free space (Fig. 3d,e). For instance, the EL
originating from a single groove (Fig. 3c, Area1x-groove = 0.05 µm2) is about one order of
magnitude brighter than the total integrated power of the entire pad (49 µm2). However,
accounting for all inefficiencies we estimate the total external quantum efficiency of these tunnel
junctions including the etched grooves to be on the orders of 0.01 - 0.1%; from the 4π emission
sphere only a fraction of the upper half dome is captured by the objective lens (NA = 0.42) and
converted into an observable by the camera (QE~ 75%), and the hybrid-plasmon mode-to-free-
space coupling efficiency is about one percent (Fig. 3e). However, the light emission can be
observed with the naked eye (Fig. 1e), and an example video was captured by a CMOS camera
(supplementary online material). Furthermore, the tunnel probability into the light emission mode
can be enhanced via the Purcell effect, reducing the tunnel current resistance. With experimental
Purcell enhancements of about 100 being demonstrated [32], one could expect the conversion
efficiencies to approach single digit percent range, which is just about 10x away from the
predicted values [19]. Next we compare the emission between free space and the plasmonic mode
with a designed grating [40, 42] (supplementary material, Fig. 3d-f). We find that a square-shaped
grating does not offer a significant improved outcoupling efficiency over a thin (20 nm) thick
metal layer, because the island-like surface roughness of the poly-crystalline deposited metal film
(with an optimum thickness) already provides some momentum to facilitate outcoupling (Fig. 3e)
[26,43]. Optimizing the grating up to about 40x times enhancement in light emission intensity
was observed via the sine-shaped grating in comparison to the square shaped grating (Fig. 3e).
These results can be explained from a more homogeneously provided momentum added to the
hybrid plasmon mode. Furthermore, we find that the grating efficiency improvement over the
non-grating case grows with bias and drops after ~5V which is likely due to joule heating and
consequently thermal stress on the junction (see supplementary material, Fig. 3e). This indeed is
consistent with our experimental observations, where the device lifetime is inversely proportional
to the bias voltage. An optimum operation voltage is at around 3-4 volts for optimized light
emission while keeping the thermal stress low (Fig. 3e).
Because the emission originates from the rapidly-thermalized Fermi-sea of a semiconductor and
into the conduction band of a metal, the limiting processes do not follow the standard rate
equations of light emitters and lasers. From Heisenberg's uncertainty principle, large optical
bandwidths imply inelastic tunneling speeds on the order of 10's of femtoseconds. Indeed, the
temporal response of a tunnel event has been measured as short as 100 atto seconds [44].
Comparing this to recombination lifetimes of direct and indirect bandgap semiconductors such as
GaAs and Si, which are on the order of nanoseconds and milliseconds, respectively, we find that
tunnel junctions may allow for a high modulation speed [45, 46]. With the delay of the actual
tunnel being negligible, we analyze the electrical circuit-related constrains to understand the
junction's actual response time. The limiting factor is related to resistive and capacitive (RC)
effects of the junction itself [47]. Our MIS tunnel source is a planar structure acting as a parallel
plate capacitor (Fig. 4). Here, the relevant resistance in this case is not the line impedance but the
resistance. For inelastic tunneling events to be dominant, the electron tunnel current must
dominate the displacement current across the capacitor. Note, that the tunnel resistance scales
inversely with area, whereas capacitance scales linearly, yielding an RC time constant invariant to
area in an ideal case (i.e. neglecting nonlinearity, see methods). However, the tunnel resistance
scales exponentially with thickness, while the capacitance scales only linearly. As a result, high
modulation speed (>40 GHz) can be achieved with sufficiently thin tunnel oxides (0.6 nm, Fig.
4). The latter is technologically achievable by adjusting the deposition cycle in the atomic-layer-
deposition process (Fig. 4) [48, 49]. A video of a dynamically modulated junction that is slow-
enough for the millisecond response time of digital camera is provided in the supplementary
online information. Replacing the top metal of the MIS junction with a poly-silicon drops the
speed to ~8 GHz due to lower tunneling current originating from the higher resistance of the
doped semiconductor vs. the metal (Fig. 4). It is worth mentioning, that the metal serves a triple
function in this light source; (i) metal confines the optical mode enabling device scalability via
allowing for sub-diffraction limited modes as we have previously shown for hybrid plasmons
[29], (ii) metal is a heat sync, since replacing the top metal with poly Silicon raises the device
temperature enabling higher modulation speeds (i.e. Pdissipated = E/bit x bitrate) (see supplementary
information) [29], and (iii) metal acts as an electrical contact allowing for low-voltage drops in
the contacts leading up to the device. The latter is not possible for photonic devices as their
optical loss from heavy-doped (low resistance) semiconductors is detrimental to the insertion loss
devices [49]. Interestingly, the modulation speed can be accelerated further by increasing the
inelastic tunneling probability via the Purcell factor, which could be achieved by introducing
nanoscale cavities [32,50,51]. Such acceleration of emission processes will thus further decrease
the tunneling resistance, hence increasing direct modulation speed. This also leads to an enhanced
quantum efficiency and thus wall-plug efficiency, in analogy to the spontaneous emission factor
reducing the laser threshold [19].
In conclusion, we experimentally demonstrated an electrical-driven Silicon-based plasmon source
where the plasmon creating mechanisms originates from inelastically tunneling electrons across a
quantum mechanical thin dielectric barrier. This light emitting tunnel junction is not bound by
physics of a classical semiconductor 2-level system, but by the probability of plasmon creation
from inelastically tunneling electrons. We validate the origin of the plasmon source to the tunnel
current, and explain the spectrum with dispersive tunnel-current probability modeling matching
our experimental results. We access the high-density plasmon mode inside the tunnel junction by
slicing the device open, and find the optimum light emission condition to be an interplay between
the internal and surface-bound optical modes, propagation and coupling losses, and wavevector
matching. We find the ideal metal thickness of this metal-insulator-semiconductor junction to
coincide with the skin depth of the metal used. However, introducing a grating increases the
outcoupling efficiency to free space 40 fold relative to the optimized metal thickness. Lastly, the
broadband emission of the tunnel events suggest a fast modulation speed limited given
Heisenbergs uncertainly principle. The actual modulation speed for devices scales inversely
exponentially with the tunnel-barrier thickness and thus with the tunnel current. Our results show
a viable path for silicon-based light emitters based on technological-relevant Silicon-on-insulator
platforms, suitable for electrically-driven sources operating at room temperature in optical and
hybrid plasmonic networks on-chip [52,53].
Acknowledgements
V.S. is supported by Air Force Office of Scientific Research under the Award FA9550-17-1-
0377. We thank Josh Conway for helpful discussions, and Ergun Simsek for numerical analysis
support.
Author Contributions
V.S. conceived the idea. H.G and V.S. performed experiments and generated figures. H.G.
performed both analytical and numerical analysis. FS performed analytical analysis. All authors
discussed the results, and wrote the manuscript.
Manuscript Figures
Figure 1. Silicon plasmon light source operation mechanisms and device details. Schematics of (a)
elastically- and (b) inelastically scattering carrier tunneling, the latter leading to plasmon creation. (c)
Electrical bias scheme for the light-emitting tunnel junction based on a metal insulator semiconductor
configuration. Metal: Au = 100 nm, Oxide: SiO2 = tox = 2.6 ± 0.4 nm, Silicon: thickness = 200 nm, p-type
on a silicon-on-insulator (SOI) platform. Side-lengths of the squared devices vary from 0.5-40 µm. (d)
Subsequent sub-wavelength plasmon hybrid mode inside the junction. Highest Ey-field strength is inside
the thin tunnel oxide [5, 30, 31]. For surface normal emission, field density of the hybrid plasmons leak
through the metal reaching the metal-air interface forming a surface plasmon polariton. When momentum
is added, plasmons couple into free space (hot spots in electroluminescence in e). (e) Tunnel junction
devices on chip carrier are wire bonded for electrical contact with spontaneous emission observed from the
tunnel junction area. A grating facilitates scattering into free space, which is visible with the naked eye.
Figure 2. Plasmon and light creation mechanism of the tunnel source. (a) I-V curve for the device and
current relation with respect to optical modes. The light source is a MIS capacitor resulting in higher
emission when biased in accumulation (Vbias < 0) as opposed to inversion (Vbias > 0), due to the
corresponding tunneling current feeding two plasmonic modes. Materials: p-type Si (0.1-2.8 Ωcm), SiO2,
and Gold. Numerical tools: Silvaco. Insets; band diagrams and mode creation; a hybrid-photon-plasmon
(HPP) like mode, and a surface plasmon polariton (SPP) are fed by the accumulation tunneling currents. (b)
I-Vbias characteristic shows a bi-exponential growth. Each data point is an average of 15 devices verifying
that the tunnel current is the origin for the plasmon creation. Fitting the current to a tunnel model yields an
ideal-factor of 1.35 corresponding to an oxide thickness, tox = 2.6 ± 0.4 nm. The light output was found to
increase superlinearly with current. A 7 µm x 7 µm plasmon emitting tunnel junction in Silvaco was
modeled with 2.1 nm thick SiO2 (effective mass of 0.2mo for electron and 0.045mo for holes) with a p-type
doping concentration of 2x1017cm-3 for silicon. (c) The junction's spectrum is centered around 720 nm
increases with bias (1-6 Volts). The spectral lineshape is not simply given by the quantum condition E = hv
= qVbias, but depends on the convolution of the spectral tunnel current density with that of the hybrid
plasmon polariton mode [26]. Lumerical FDTD simulation's result for 20 nm thick Gold (with surface
roughness), when dipoles are used as a light emission source match the measurement results.
Figure 3. Light emission to free-space coupling. (a) Schematic of etched device area using focused-ion-
beam (FIB) milling to reduce the blocking top metal (Au, thickness = 100 nm). d = etch depth. Inset: far-
field CMOS images of the electroluminescence (EL) showing an optimum thickness. (b) Collected EL as a
function of etched device pads (normalized for area, red squares). The exponential increase is due to the
trivial loss reduction when the metal is thinned down. Grey area represents metal thickness. Optimum
outcoupling thickness is about skin depth of metal (~20 nm). Absorption coefficients: (κAu)fit = 5x10!
decently close to (κAu)[54] = 6x10!. (c) Formula and indication for enhancement factor calculation. S =
signal, BGK = background, MPNG = metal-pad-no-grating. (d) Sine shape and square shape gratings view
under AFM (e) The EL enhancement for a sinusoidal grating yields an enhancement of up to 40 times. The
degradation of the EL curve for high bias voltages is due to both imperfect MIS-junction and thermal stress
from joule heating. (f) EL performance comparison of Sine shape, square shape and 20 nm thick no-grating
plasmon emitting tunnel junction in Lumerical FDTD simulation.
Figure 4. Direct modulation speed of the tunnel junction. Results show that at 10's of GHz-fast
modulation are possible for tunnel oxides less than one nanometer (Vbias = -3.4V). MIS = metal-insulator-
semiconductor and PIS = polysilicon-insulator-semiconductor. Silicon thickness = 200 nm Inset: plasmon
emitting tunnel junction layout and its equivalent circuit model.
Methods
1) Experimental Methods: The fabrication process starts with piranha cleaning and buffer oxide
etching (BOE) to clean the native oxide layer on top of the Silicon substrate. Next, 300 nm thick
SiO2 was grown on Silicon via PCVD. Following, photolithography and BOE (70 nm/s) was
conducted together to pattern and remove the SiO2 from the device areas. Next, 2-3 nm tunnel
oxide was grown via O2 flow for 1.5 hours at 700 °C. Next, photolithography and lift-off
processes were conducted together to create 100 nm thick top metal (Au), and a final
metallization step to create 120 nm thick contact pads (Cr/Au). IV measurement: DC probes
located on the device's pad are connected to a semiconductor parametric analyzer. DC voltage
increased with small step up to 5-6 V and data recorded to plot the IV response. The measurement
was repeated with opposite voltage polarity applied to the device to plot both accumulation and
inversion region. Luminescence measurement: Sample was located on probe station with optical
probes aligned towards light emission direction after proper calibrations. The light emission was
collected and sent to an OSA (optical spectrum analyzer) to observed emission with respect to
wavelength at room temperature. Light emission was pictured and recorded via a CMOS camera.
2) Numerical Methods
1. Tunneling current as a function of applied bias voltage: A 7 µm x 7 µm square shape MIS
structure in this work (Fig. 2c) was rebuilt in the Silvaco with 200 nm thick silicon and additional
dioxide (SiO2) and gold (Au) layer. A uniform p-type doping with a concentration of 2𝑥10!" was
SiO2 layer. The carrier lifetime for both holes and electrons in silicon was introduced as 10!!.
212 µm thick silicon to replicate the resistance coming from wires, following by 2.1 nm silicon
applied to the Silicon while defining effective mass of 0.2mo for electron and 0.045mo for holes in
The numerical solver used for electron, hole and band-to-band tunneling mechanism (self-
consistent quantum tunneling model) while using additional convergence tools inside Silvaco to
improve the accuracy. In the same way, the tunneling current to calculate the cutoff frequency of
the MIS device (Fig. 4) was derived from Silvaco where the Silicon thickness is 200 nm for both
PIS and MIS device.
2. Emission spectrum and grating dependent emission intensity: MIS structure (Fig. 1c) was
rebuilt in Lumerical FDTD with the dipoles located in oxide region to replicate the light emission.
A surface roughness was created on 20 nm thick Gold surface for the spectrum. Gold data from
[54]. For grating the study; the dimensions of the fabricated grating structures were measured
with AFM and the data were used to reproduce the same structures in Lumerical FDTD. The
oxide and the silicon were removed from the structure and only 180 nm thick metal grating
structure on top of 20 nm thick metal plate were kept. Dipoles were located under the 20 nm thick
plate to imitate the light emission. The structure has a specific FIB beam angle between gratings
and only the grating duty cycle was varied during the simulation (see supplementary material).
Additional simulation was conducted after removing the grating structure to obtain the
wavelength response independent form the grating effect for 20 nm thick Au layers. A high mesh
FDTD (8/8) with a stability factor of 0.95. An extra high mesh box was added to get further
improvement in accuracy. A field time monitor was used to properly define the simulation time.
A mode expansion monitor was added to resolve the effective index and mode. A frequency
domain profile was used to obtain the light emission profile. A frequency domain field and power
monitors were used to measure both reflection and transmission. The light emission intensity for
different duty cycle was recorded by using data from transmission and reflection monitors.
3) Analytical Methods
1. Emission Loss and Grating Analysis: Thinning the metal, the EL increases exponentially
initial amplitude of the emission intensity, z is the metal thickness towards the propagation
according to Beer-Lamber-Law; 𝐼𝑧 =𝐼!exp−𝛼𝑧, where 𝐼 is the emission intensity, 𝐼!is the
direction and 𝛼 is the absorption coefficient of the metal. The light emission intensity (𝐼!) with
respect to grating parameters (Ʌ, 𝑑, 𝛳, and 𝜖) [26];
where w is the corresponding wavelength, k is the momentum, n=1,2,3…, 𝛳 is the emission
angle, 𝜆! is the effective wavelength, Ʌ is the grating period, d and 𝜖 are the thickness and
where 𝐸! is the electric field in the oxide region, 𝑚∗ is an effective mas, ɦ is plank constant, and
𝜙! is barrier height. The electric field in the oxide region is proportional to the surface potential;
where 𝑉!"#$ is the applied bias voltage, 𝜙!" is the difference between the electron affinities of Si
and SiO2, 𝜙!" is the difference between the electron affinity of 𝑆𝑖𝑂! and the work function of
𝐼!≈ 𝑃𝑘,𝑤
𝑒𝑥𝑝 𝜆!𝐿! 𝑤ℎ𝑒𝑟𝑒 𝐿!= 12𝑘!,𝑘=𝐾𝑠𝑖𝑛𝛳±𝑛𝐺, 𝐺=2𝜋Ʌ, 𝑘,𝑘!∼ 𝜖𝑑
dielectric constant of oxide layer respectively.
2. Tunneling Current and Direct Source Modulation Speed: The tunneling current responsible
from the light emission is given in [34] and proportional to the Electric field in the oxide layer as
shown below;
𝐼 𝛼 𝐸!!exp −! !!∗!!! !!
!!ɦ!!
𝐸!"= 𝑉!"#$+ 𝜙!"−𝜙!"+!!!! 𝑙𝑛 !!!! − 𝜓! /𝑡!"
𝑓! = !!!"# , R = !!"#$!" , C = 𝜖o𝜖r
A!!"
the metal, 𝑡!" is the oxide thickness and 𝜓! is the surface potential. The equivalent circuit of the
MIS diode was derived as parallel RC [55] and the cut off frequency of RC is;
where J is the tunneling current density, and was derived from Silvaco tool.
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|
1908.08366 | 2 | 1908 | 2019-10-21T10:02:38 | Tunable Birefringence in Silica Mediated Magnetic Fluid | [
"physics.app-ph",
"physics.optics"
] | The present study reports magnetic and optical properties of silica mediated lauric acid stabilized magnetic fluids. The tunable birefringence ({\Delta}n) and other properties are investigated as a function of (i) concentrations of silica suspension, and (ii) saturation magnetization (MS) 0.5099 kA/m (FN30) and 1.2855 kA/m (F30) of magnetite magnetic fluid (MF). The study reveals that {\Delta}n suppresses on addition of silica in FN30, whereas enhances (up to critical concentrations of silica) in F30. The magnetic field induced chain observed in the FN30 based fluids are long, thick and scattered, while short, thin and dense chains emerges in F30 based fluid. The magnetic field induced assembly and the magnetic parameters correlates with the results of {\Delta}n. The particle size analysis indicates increment of particle size on addition of silica nanoparticles. The thermogravimetry analysis confirms the direct interaction of silica nanoparticles and the lauric acid coated magnetite particles. This is the first report of direct interaction of silica - magnetite magnetic fluids, and its subsequent effect on tunable birefringence and other properties. | physics.app-ph | physics | Tunable Birefringence in Silica Mediated Magnetic Fluid
Urveshkumar Soni, Nidhi Ruparelia, Abhay Padsala, Rucha P Desai,a)
P. D. Patel Institute of Applied Sciences, Charotar University of Science and Technology
(CHARUSAT), CHARUSAT Campus, Changa, 388421, Gujarat, India.
a) Authors to whom correspondence should be addressed: [email protected]
The present study reports magnetic and optical properties of silica mediated lauric acid
ABSTRACT
stabilized magnetic fluids. The tunable birefringence (Δn) and other properties are investigated
as a function of (i) concentrations of silica suspension, and (ii) saturation magnetization (MS)
0.5099 kA/m (FN30) and 1.2855 kA/m (F30) of magnetite magnetic fluid (MF). The study
reveals that Δn suppresses on addition of silica in FN30, whereas enhances (up to critical
concentrations of silica) in F30. The magnetic field induced chain observed in the FN30 based
fluids are long, thick and scattered, while short, thin and dense chains emerges in F30 based
fluid. The magnetic field induced assembly and the magnetic parameters correlates with the
results of Δn. The particle size analysis indicates increment of particle size on addition of silica
nanoparticles. The thermogravimetry analysis confirms the direct interaction of silica
nanoparticles and the lauric acid coated magnetite particles. This is the first report of direct
interaction of silica - magnetite magnetic fluids, and its subsequent effect on tunable
birefringence and other properties.
Keywords: Magnetic fluid, Birefringence, Magnetic structure formation, silica nanoparticles.
1. INTRODUCTION
A stable colloidal suspension of superparamagnetic nanoparticles sterically stabilized
with surfactant (either single layer, double layer or multilayer) and dispersed in magnetically
passive medium (e.g., water, buffer, kerosene, oil, etc.) forms magnetic fluid (MF) (or
ferrofluid)[1][2]. This opaque dark liquid forms magnetic field induced self-assembly. The
assembled structure is responsible for many magnetic field induced optical properties like
birefringence, transmission, magneto-chromatics, refractive index, etc. It has become base for
several MF based potential optical devices such as MF gratings[3], switch[4], modulator[5],
capacitor[6], limiters[7], sensors[5], and many more.
The magnetic field induced self-assembly, key factor for material to be birefringent,
can be tuned by means of changing the composition of superparamagnetic particles, by varying
magnetic volume fraction, by addition of non-magnetic nano/micron-sized particles, etc. It is
1
known that the addition of microparticles of nonmagnetic materials (e.g. silica, carbonyl iron,
etc. ) in the magnetic fluid enhances the magnetic field induced structure formation[8,9]. This
type of fluid also resembles to magnetorheological (MR) fluids. However, ambiguity in the
addition of nonmagnetic nanoparticles have been reported extensively. For example, addition
of nano-silica (~10 nm) in water-based MF suppresses the birefringence[10,11], while addition
of latex particles (42 nm to 210 nm) in MF enhances chain/column formation[12]. Earlier, we
reported the augmentation of chain formation on the addition of halloysite nanotubes (HNTs)
[13], and increase in magneto-viscous properties with silica nanoparticles[14]. Moreover, the
interaction between the magnetic fluid and non-magnetic objects (HNTs or silica) was not
established. Hence, still it is ambiguous that why addition of nonmagnetic particles alter the
properties and what type of interaction, if exist, governs the fluidic properties? Here, we report
the evidence of direct interaction between the silica nanoparticles and lauric acid coated
magnetite particles, and its subsequent effect of the magnetic and optical properties of magnetic
fluids. The fluid remains stable on the addition of silica nanoparticles (NPs), which is a plus
point for the potentiality of development in any application.
2. EXPERIMENTAL
2.1 SAMPLE PREPARATION
A magnetite magnetic fluid sterically stabilized with double layer of lauric acid (LA)
has been synthesized using chemical co-precipitation route[15]. A single-phase spinel ferrite
FCC structure of magnetite, without the presence of any secondary phase has been determined
based on x-ray diffraction pattern analysis. It has crystallite size of (8.2 ± 0.2) nm. This
synthesized fluid has been diluted 25 times for the optical measurements and coded here as
F30. The magnetic volume fraction (𝜑𝑚) of F30 is 0.0026 (i.e. 0.26%). Further dilution of F30
using lauric acid stabilized solution (0.8 % LA and 5% ammoniated solution (25%) in distilled
water) was ultrasonicated for 5 minutes at 45°𝐶. This results into stable diluted magnetic fluid
coded as FN30. The dilutions are stable for more than six months.
We used a colloidal silica AM-30 (LUDOX) (Make: Sigma-Aldrich), consists of silica
and aluminum, suspension stabilized using sodium counter ions with the average silica particle
size 12nm.
In the F30 and FN30 magnetic fluids fixed amount of AM-30 silica suspension has been
added by keeping the total volume constant. Various samples are prepared as follows: F30 MF
(99 µl) and 1 µl silica suspension lead to form FA1 fluid. And FN30 MF (99 µl) and 1 µl silica
suspension lead to form FNA1 fluid. Hence, the samples are coded as FAX and FNAX
2
depicting the use of F30 and FN30 MF. Similar way other samples were prepared. The list of
samples are as follows: FA0.5, FA1, FA1.5, FA2, FA2.5, FA3.5, and FNA1, FNA2, FNA3.
Samples separately prepared for the particles size analysis and thermogravimetric
analysis, and coded as FNA0.1 and FA0.27 respectively (described below).
3. CHARACTERIZATION
3.1 PARTICLE SIZE ANALYSIS
Sample preparation, an essential part of colloidal nanoparticle size analysis, has been
carried out as follows. Initially, 1 ml surfactant solution containing 0.1 % LA in 5% ammonia
solution (25%) was diluted by adding 1 ml distilled water. In this solution, 0.5 µl FN30 fluid
was added. To observe the effect of silica NPs 0.1µl AM-30 suspension was added in the later
system. The measurement was carried out using the particle size analyzer (Make: Malvern,
Model: Zetasizer, S90) at 25 OC. The measurements were repeated for five times to have better
statistical average, where each run contains 25 scans.
3.2 THERMOGRAVIMETRY
Temperature dependent surfactant decomposition and phase transitions have been
determined using thermogravimetric analyzer (Make: Mettler Toledo, Model: TGA/DSC-1)
for magnetic fluid (i) without silica (F30) and (ii) with silica suspension (FA0.27). Similar to
the particle size analysis measurement, here nominal silica concentration has been used in order
to derive the effect of interaction. The samples were dried in a hot air oven at 100 OC overnight.
The dried powder (~11 mg) sample was taken in an alumina crucible for the measurement.
Under the N2 atmosphere, the mass loss was recorded in the temperature range of 50-1000 OC
in the following segments. Here, the first data indicates temperature range of measurement,
and the second shows temperature interval: (i) 50-200 OC; 10 OC /min., (ii) 200-360 OC; 5 OC
/min., (iii) 360-690 OC; 10 OC /min. (iv) 690-750 OC; 5 OC /min., (v) 750-820 OC; 2 OC /min.,
and (vi) 820-1000 OC; 5 OC /min. It took ~ 163 minutes to complete each measurement. The
first-order derivative was calculated based on the mass loss data, and was used to determine
surfactant decomposition and phase-transition temperature.
3.3 MAGNETIZATION MEASUREMENTS
Vibrating sample magnetometer (Make: Lakeshore, Model: 7404) used to perform
magnetic measurements at 300K. The following magnetic field range followed by the field
interval was set: (a) 0 to 100 G; 1G, (b) 100 to 1000 G, 10G, (c) 1000 to 2500 G, 50G, (d) 2500
3
to 10000 G; 200G, and (e) 1000 to 12000 G; 50G. The data has been used to determine the
initial susceptibility, saturation magnetization, mean magnetic size and size distribution, etc.
3.4 MAGNETIC FIELD INDUCED BIREFRINGENCE (∆𝒏)
The setup comprises of linearly arranged diode laser (unpolarized -- 5 mW power), iris
diaphragm, polarizer, MF, electromagnet, analyzer, and photo detector (Make: Thorlab Model:
DET10A/M). A laser beam passes through an iris diaphragm placed at a distance 0.035 m to
remove extra scattering. This focused beam was polarized using a polarizer kept at a distance
0.064 m from iris diaphragm. The polarization angle was +45° with respect to the applied
magnetic field (H). The distance between the polarizer and magnetic fluid sample was 0.195
m, whereas, the distance from the MF to analyzer was 0.24 m. The resultant laser beam reached
to the photodetector placed at a distance 0.10 m from the analyzer. Between the two pole pieces
of electromagnet, a sample cell was placed. The magnetic flux lines were perpendicular to the
MF and laser beam. A constant current power supply controlled the magnetic field. The EH
configuration was attained by crossing the analyzer and polarizer. The field dependent changes
were recorded by adjusting the analyzer angle to maximum intensity (Imax) and minimum
intensity (Imin). The value of magnetic field induced birefringence (∆𝑛) determined as
Δ𝑛 = sin−1 (
2 √𝐼𝑚𝑖𝑛 𝐼𝑚𝑎𝑥
1+(𝐼𝑚𝑖𝑛 𝐼𝑚𝑎𝑥
)
⁄
⁄
𝑐ℎ(ℎ1 − ℎ2))
𝜆
2𝜋𝑑
The thickness of cell (d) and wavelength of diode laser (λ) were 120 μm and 650 nm
respectively. Here, hi (i=1,2) is respectively the electric field absorption coefficient for
polarized light ׀׀el and er with respect to the magnetic field (H). The hi (i=1, 2) was obtained
by solving Ii = Ioi e-2hi(H) with the transmitted intensities of the sample Ioi at 𝐻 = 0 𝑇, and Ii at
𝐻 ≠ 0 𝑇. Thus, magnetic field dependent ∆𝑛 was determined based on Imax, Imin, Ioi, and Ii.
3.5 OPTICAL MICROSCOPY
An inverted microscope (Make: Meiji Techno Model: IM7100) with a 20 × objective
lens and numerical aperture (NA) 0.4 attached to charged coupled device (CCD) camera
(Make: Jenoptik), operated using ProgRes-C3 software, has been used to record magnetic-
field-induced structure formations. The image area was pre-calibrated using the standards
provided by the manufacturer. The images were captured in EH configuration. The sample
was prepared by sandwiching the magnetic fluid between a glass slide and coverslip. Rare earth
cylindrical magnet was used to provide a constant magnetic field (H) ~0.055 𝑇.
4
4. RESULT AND DISCUSSION
Figure 1: Chemical structures of (a) lauric acid (b) magnetite particle with primary and
secondary coating of LA, (c) results of particle size analyzer, chemical structure of (d) silica
suspension AM-30 and (e) interaction of silica NPs with LA coated magnetite.
Figure 1(a) shows the chemical structures of LA containing a hydrophilic head and a
hydrophobic tail. During the reaction, at moderately high temperature (80-90 OC), COOH
group reduces to COO- and attaches to the positively charged nanoparticle, leaving an unbound
hydrophobic tail. In the polar medium second layer of LA provides stability towards
agglomeration (figure 1(b)) in reverse configuration (tail to head). Figure 1(c) shows
hydrodynamic particle size distribution (number distribution) for magnetic fluid without and
with silica nanoparticles, as 58 (±1) nm and 68 (±1) nm respectively. Assuming the mean
magnetite particle size 12 nm and lauric acid chain length 2 nm, the expected total
hydrodynamic size is around 16 nm. Noted here that the average hydrodynamic size is high.
For the particle size measurement, the magnetic fluid has been diluted many folds with the
additional free surfactant compared to the fluids used for the measurements (F30 & FN30).
During the extensive dilution, one may not overlook the possibility of formation of
dimer/trimers, which eventually decorated by free lauric acid that forms multilayer around the
particle(s). The interest of this measurement was not to determine exact particle size, but to
understand the interaction of the silica with the lauric acid stabilized magnetite nanoparticles.
In case of non-interacting behavior of silica, one should expect two peaks (i.e. ~ 12nm of silica
5
(a) lauric Acid (d) AM -30(b) surfactant coating (e) proposed structure TailHeadFe3O4Fe3O402040608010012014005101520253035 Number (%)Size (nm) FN30 FNA0.1(c) particle size analysis and 58 nm of coated magnetite). On the contrary, single peak around 68 nm is observed. As
per the datasheet the size of silica NPs is 12 nm, whereas observed enhancement is ~ 10 nm.
The difference of 2 nm could be due to the compression of surfactant in the presence of silica
NPs. It is quite possible that silica NPs either interacting with free lauric acid molecules or
lauric acid-coated magnetite particles. Further, to recognize the nature of interaction,
thermogravimetric measurement has been carried out.
Figure 2: First order derivate of temperature dependent mass loss for FA0.27 & LA100 fluids.
Figure 2 shows typical data of the first derivative of mass loss (
𝑑𝑀
𝑑𝑇
) for F30 and FA0.27
fluids, with major six peaks. The mass loss observed up to ~120 OC in both the samples is
attributed to absorbed water. The second peak at 200 ± 5 OC in both the systems indicates
decomposition of free surfactant. The difference observed in the mass loss, i.e. ~ 11% in F30
and ~ 4% in FA0.27 is assigned to the interaction of silica NPs with free surfactant. The next
peak observed at 247 ± 5 OC (~ 15% mass loss) in F30 ascribes decomposition of the physi-
adsorbed layer of LA on magnetite particles. This peak shifts to 262 ± 5 OC (~ 7% mass loss)
in FA0.27 suggesting interaction of silica nanoparticles with the secondary layer (physi-
adsorbed) of LA. In both the peaks, the reduction of mass loss in presence of silica
nanoparticles attributed to the redistribution of surfactant around the surface of silica NPs. The
decomposition of chemi-adsorbed LA occurs at 347 OC in both the fluids. The constant peak
position indicates the interaction of silica NPs with the secondary layer of surfactant. The
6
2004006008001000-0.15-0.10-0.050.00 dM/dTT(oC) FA0.27 F30 temperature >600 OC shows the phase transition of magnetite. The peak observed in F30 at ~
758 ± 2 OC is attributed to the phase transition of FCC spinel ferrite Fe3O4 to wustite Fe-O[16].
Further, ~ 858 ± 5 OC is attributed to the transformation to metallic Fe. In the silica NPs added
fluid, similar phase transition with little difference is observed. Before the decomposition of
Fe3O4 structure, the peak becomes broaden followed by evident transformation at 753 ± 2 OC.
It is an interesting observation, it may be due to the interaction of silica NPs with the bare Fe3O4
(surfactant decomposed <600 OC) and forms a new composite. The phase transition observed
at 758 ± 2 OC is ascribed to the decomposition of thermally formed silica-Fe phase. In
summary, TGA result confirms the interaction of silica NPs with the secondary layer of
surfactant around Fe3O4 particles. The results also support the inference of particle size
analysis. Figure 1(d & e) shows the chemical structure of AM-30 silica NPs and possible
interaction of silica NPs with surfactant coated magnetite particle.
Figure 3: Magnetization measurement of (a) FN30 & FNA2, and (b) F30 & FA2 fluids, with
the respective initial susceptibility data (inset).
Figure 3 shows magnetic field (𝐻) dependent response of (a) FN30 & FNA2, and (b)
F30 & FA2 fluids. Inset in the respective figures represents linear treads at low fields. The
initial susceptibility (𝑖) determined by fitting with the linear equation is listed in the Table-1.
The data recorded during the field sweep indicates a linear increase in magnetization in the low
field, exponentially increases in the mid-field region - due to spontaneous magnetization -
followed by going towards saturation at high field. Table-1 shows the saturation magnetization
(𝑀𝑠) determined by extrapolating 𝑀 𝑣𝑠 1 𝐻⁄ at 1 𝐻⁄ = 0 (i.e., intercept). The table also shows
7
020040060080010000.00.30.60.91.21.50.00.20.40.60.81.00.0000.0300.060(b) M (kA/m)H (kA/m) F30 FA2 M (kA/m)H (kA/m)020040060080010000.00.10.20.30.40.50.00.30.60.90.0000.0080.0160.024(a) M (kA/m)H (kA/m) FN30 FNA2 M (kA/m)H (kA/m) the magnetic volume
fraction determined using 𝜑𝑚 = 𝑀𝑠 𝑀𝑑⁄
, assuming domain
magnetization (𝑀𝑑) of Fe3O4 = 485 𝑘𝐴 𝑚⁄ (bulk value). The mean particle diameter (𝐷𝑚)
derived using the ideal Langevin initial susceptibility equation, 𝑖 =
3 𝜑𝑚
𝜇0𝜋𝑀𝑑
2𝐷𝑚
18𝑘𝐵𝑇
, where, 𝑖 is
the initial susceptibility, 𝜇0 the permeability of free space, constant 𝑇 the absolute temperature
and 𝑘𝐵 the Boltzmann constant. For the magnetic fluid exhibiting superparamagnetism,
Chantrell et al. [17] proposed the magnetic particle size and its distribution deduction in the
form of volume and number weighted average expressed as,
𝐷𝑚𝑉 = [
18𝑘𝐵𝑇
𝜇0𝜋𝑀𝑑
√
𝑖
3𝑀𝑠𝐻0
1
3⁄
]
3
, 𝐷𝑚𝑁 = [2𝑘𝐵𝑇√3𝑀𝑠 𝑖𝐻0
⁄
⁄
𝜋𝑀𝑑
]
1
3⁄
, 𝜎𝐷 =
1
3
√𝑙𝑛 [
3𝑖𝐻0
𝑀𝑠
]
where, 𝐷𝑚𝑉 is the mean particle diameter in the case of volume weightage average, 𝐷𝑚𝑁 the
mean particle diameter of number weightage average, 𝜎𝐷 the log-normal size distribution
parameter, and 𝐻0 the field at which the high field data for 𝑀 𝑀𝑠⁄
vs 1 𝐻⁄ extrapolates to 𝑀 =
0. Noted here that the volume average has less uncertainty due to (1 𝐻0⁄
) rather than (1 𝐻0⁄
)3
effect.
Table 1: An initial susceptibility (𝑖), and saturation magnetization (𝑀𝑠) derived from data.
The magnetic volume fraction (𝜑𝑚) calculated assuming constant 𝑀𝑑. The mean particle
diameter 𝐷𝑚 determined based on the initial susceptibility equation. The volume-weighted
mean magnetic diameter (𝐷𝑚𝑉), number weighted mean diameter (𝐷𝑚𝑁) & log-normal size
distribution (𝜎𝐷) calculated from equations.
Sample
𝒊
(± 0.0001)
𝑴𝒔 (𝒌𝑨 𝒎⁄ )
(± 0.0045)
FN30
FNA2
F30
FA2
0.0174
0.0180
0.0543
0.0570
0.5099
0.5498
1.2825
1.5965
𝝋𝒎
0.0011
0.0011
0.0026
0.0033
𝑫𝒎 (𝒏𝒎)
𝑫𝒎𝑽 (𝒏𝒎)
(± 0.1)
(± 0.01)
𝑫𝒎𝑵 (𝒏𝒎)
(± 0.01)
11.0
10.8
11.8
11.2
7.36
6.74
8.23
7.95
3.56
2.81
4.31
4.34
𝝈𝑫
0.49
0.54
0.46
0.45
Table 1 shows magnetic parameters determined for FN30, FNA2, F30, and FA2 fluids.
The FN30 was prepared by diluting F30 fluid, the observed difference in 𝑖 and 𝑀𝑠 indicates
the breaking of aggregates on dilution. The 𝑖 and 𝑀𝑠 increases in FNA2 and FA2 fluids
compared to their respective parent fluids. However, the 𝐷𝑚 reduces on addition of silica.
The 𝜎𝐷 increases in FNA2 fluid, which suggests re-distribution of particle due to the interaction
8
with silica NPs. The 𝜎𝐷 nominally decreases in FA2 fluid. The effect of diamagnetic silica NPs
is apparent in the magnetically diluted system. The magnetic field induced structure formation
is expected to be different in all these systems. Hence, the magnetic field induced birefringence
and optical microscopy have been carried out.
Figure 4: Magnetic field-induced birefringence and reduced birefringence (inset) for FA &
FNA systems as a function of magnetic field (a) & (b) and as a function of silica concentration
(c) & (d) respectively.
Fig. 4 (a & b) shows magnetic field induced birefringence (Δ𝑛) with respective inset
figures of reduced birefringence (
Δ𝑛
∆𝑛𝑚𝑎𝑥
) as a function of the magnetic field for FN30, FNA1,
FNA2, FNA3 and F30, FA0.5, FA1, FA1.5, FA2, FA2.5, FA3.5 fluids. It infers from the figure
that, with increasing magnetic field, Δ𝑛 spontaneously increases and goes toward saturation.
Owing to superparamagnetic nature, the magnetic field dependent birefringence can be
explained by incorporating Langevin function at the relatively low magnetic field,
Δ𝑛 = Δ𝑛𝑚𝑎𝑥 (1 −
3𝐿(𝛼)
)
𝛼
where, 𝐿(𝛼) = 𝐶𝑜𝑡ℎ(𝛼) −
1
𝛼
is a Langevin function, and 𝛼 =
𝜇𝐻
𝑘𝑇
the Langevin parameter,
with optimized Δ𝑛𝑚𝑎𝑥. In figure 4 (a & b) open symbol depicts experimental data of fluid while
solid line fits above equation. Inset of Figure 4(a & b) normalized birefringence (∆𝑛 ∆𝑛𝑚𝑎𝑥
)
⁄
9
-0.020.000.020.040.060.080.10-202468107.16.55.33.83.43.85.29.59.54.23.3 Birefringence (n (x10-4))H (T) F30 FA0.5 FA1 FA1.5 FA2 FA2.5 FA3.50.00.51.01.52.02.53.002468 FN30 FNA1 FNA2 FNA3 Birefringence (n (10-4))Silica Concertration (%)0.000.020.040.060.080.1002468(c)(d)(a)(b) FN30 FNA1 FNA2 FNA3 Birefringence (n (x10-4))H (T)0.00.51.01.52.02.53.03.50246810 F30 FA0.5 FA1 FA1.5 FA2 FA2.5 FA3.5 Birefringence (n (10-4))Silica Concertration (%)0.000.050.100.00.51.0 n/nmaxH (T)0.000.050.100.00.51.0 n/nmaxH (T) curves superimpose with each other. Per se it indicates result of the product 𝜇𝐻, which
eventually remains unchanged on the addition of silica suspension. This analysis can be refined
by incorporating moment distribution function. But that is not the scope of the present work.
Figure 4 (c & d) shows variation in ∆𝑛𝑚𝑎𝑥 with silica NPs concentration for FN30 and F30
fluid parent systems, respectively. It is observed from Figure 4(c) that ∆𝑛𝑚𝑎𝑥 suppresses on
addition of silica NPs. On the contrary, ∆𝑛𝑚𝑎𝑥 increases with increasing silica NPs
concentration reach to maxima and then decreases in F30 based fluids (Figure 4(d)). The
suppression behavior agrees with earlier reported results [10,18]. However, the increase in
∆𝑛𝑚𝑎𝑥 on addition of diamagnetic silica NPs has been reported for the first time here. The
birefringence is related to the field induced structure formations, e.g. chain, column, etc.
Figure 5 shows the magnetic field (H = 0.055T) induced microscopic images of FNA
& FA systems (typical pictures shown here for the brevity). The images were captured after 1
minute of applying the magnetic field. It is observed that under the influence of the external
magnetic field, the particles starts aligning and forms chains in the field direction.
Figure 5: Microscopic confirmation of chain formation on the exposure of 0.055T magnetic
field after 1 minute.
10
FNA3200 μm200 μm200 μm200 μmFNA2FNA1FN30F30200 μm200 μm200 μm200 μmFA1FA1.5FA3H = 0.055 T
Table 2: The analyzed chain parameters, i.e., chain length & chain width along with its
respective % count for the typical FNA & FA systems.
FN30 FNA1 FNA2 FNA3
F30
FA1 FA1.5 FA3
Length-1
(μm)
%
Counts
(Count)
Length-2
(μm)
%
Counts
(Count)
Length-3
(μm)
%
Counts
(Count)
3.7
3.7
3.7
3.7
2.9
3.7
3.7
2.9
66%
(2693)
58%
(747)
47%
(777)
43%
(711)
64%
(1667)
41%
(961)
62%
(890)
68%
(2045)
7.2
10.8
11.8
15
8.8
11.9
12.3
10
10%
(280)
7%
(54)
14%
(109)
21%
(152)
10%
(175)
18%
(176)
12%
(108)
13%
(275)
10.6
17.7
19.8
26.1
14.8
20.1
20.9
17
6%
(155)
7%
(50)
11%
(85)
10%
(74)
6%
(96)
16%
(150)
7%
(63)
7%
(133)
FN30 FNA1 FNA2 FNA3
F30
FA1 FA1.5 FA3
Width-1
(μm)
%
Counts
(Count)
Width-2
(μm)
%
Counts
(Count)
Width-3
(μm)
%
Counts
(Count)
3.7
3.7
3.7
3.7
2.9
3.7
3.7
2.9
70%
(1693)
56%
(747)
63%
(777)
44%
(711)
56%
(1667)
55%
(961)
68%
(890)
69%
(2045)
6.1
5.2
5.1
5.5
3.7
5.7
5.1
4.9
14%
(372)
11%
(84)
12%
(96)
22%
(157)
18%
(269)
15%
(148)
11%
(295)
14%
(286)
8.5
6.6
6.4
7.2
4.6
7.6
6.5
6.9
6%
(163)
12%
(86)
9%
(70)
13%
(91)
8%
(139)
8%
(75)
7%
(60)
5%
(109)
The images shown in the figures have been analyzed with ImageJ software. Table 2
shows the average chain parameters, i.e. length and width, contributing significantly. In FN30,
FNA1, FNA2, and FNA3 fluids are having similar chain length, i.e. 3.7 μm, with a systematic
decrement in the % counts. The next significant chain length increases with increase in silica
concentration. It spans from 7.2 to 15 μm with moderately high % counts. The next large chains
11
observed ranging from 10.6 to 26.1 μm. The chain width ranges from 3.7 to 8.5 μm. Correlating
Table 2 and the images of Figure 5, the chains observed in FN30 and FNA fluids are long,
thick, and scattered. The interchain distance increases with increasing silica.
The chain length observed in F30, FA1, FA1.5, and FA3 fluids are 2.9, 3.7, 3.7 and 2.9
μm respectively, with nearly similar % counts (except FA1). The next significant chains
observed are 8.8, 11.9, 12.3 and 10 μm long with nearly similar % counts (except FA1). The
next significant chain length contributing in the process are 14.8, 20.1, 20.9, and 17 μm with
above mentioned trend in % counts. The width of the chain ranging from 2.9 to 7.4 μm. It is
inferred from chain parameters, that inclusion of silica makes a difference in the chain
parameters. Chain length increases up to FA1.5 and then decreases. Correlating chain
parameters and the images, the chain observed are short, thin, and dense in F30 based fluids
compared to FN30 based fluids. The analyzed chain parameters supports the birefringence
analysis and discussed below in detail.
The suppression and the enhancement in birefringence on the addition of silica NPs in
the magnetic fluid having two magnetic volume fractions is analyzed as follows. The silica
NPs interacts with the magnetite particles, hence system mimics as magnetorheological (MR)
fluid. In zero magnetic field, particles exhibit zero net magnetic moment, and the particles are
dominated by Brownian motion. The magnetic field dependent magnetic moment of a single
particle is given by,
𝑚 =
𝜋
6
𝑎3𝑒𝑓𝑓𝐻
where, 𝑎 is the magnetic nanoparticle diameter, and 𝑒𝑓𝑓 the effective susceptibility. The
anisotropic dipolar potential energy of pairs of particles is expressed as, 𝑈𝑖𝑗(𝑟𝑖𝑗, 𝜃𝑖𝑗) =
𝑚2𝜇0
4𝜋
(
1−3𝑐𝑜𝑠2𝜃𝑖𝑗
3
𝑟𝑖𝑗
) with 𝑟𝑖𝑗 center to center distance between the ith and jth particles, and 𝜃𝑖𝑗 the
angle between the vector 𝑟𝑖𝑗 and the magnetic field applied. Using this, the relative strength of
dipolar interaction in terms of thermal energy is expressed by coupling parameter 𝜆 =
−
𝑈(𝑎,𝑂)
𝑘𝐵𝑇
=
2
𝜋𝜇0𝑎32𝐻0
72𝑘𝐵𝑇
. The magnetic particles assemble into the aligned structure ( ≫ 1) on
application of the field, forming dipolar chains and exhibits strong Landu-Peierls fluctuation.
Halsey and Toor (HT) illustrates the long-range coupling among dipolar chains due to chain
formations, and possess an attractive interaction through power-law decay. The HT model was
modified by Martin et al.[19],
12
𝑈~
𝑚
𝑎
〈𝐻2〉1 2⁄ ~
𝐻 (𝜇0𝐾𝐵𝑇)1 2⁄ 𝑎1 5⁄
𝜌2
Here, 𝜌 is the distance among two chains or columns. This energy can be either attractive or
repulsive. The interaction energy per unit length increases with increasing the field and/or
decrease in the inter-chain distance resulting in lateral coalesce of two chains. Consequently,
the separation distance (ρ) increases and lowering U, and resulting into reduction of overall
energy of the system.
It is evident from Table 2 that chains observed in FN30 based fluids are long, thick, and
scattered, with increasing inter-chain distance. Also, heterogeneous distribution in the chain
length and width is observed. Referring to Table-1, the 𝜎𝐷 increases from 0.49 to 0.54 on
addition of silica, lead to form long and thick chains with increasing inter-chain distance.
Correlating the chain parameters with the % counts, ∆𝑛𝑚𝑎𝑥 suppressing with increasing silica
concentrations. The chains observed in F30 based fluids are short, thin, and dense. The chain
parameters increase up to critical concentration of FA1.5 followed by trailing behavior. Similar
behavior is also observed in the birefringence. Hence, the suppression and enhancement in
birefringence are attributed to the magnetic field induced self-assembly, and also combination
of magnetic to silica volume fraction.
5. CONCLUSION
Generally, addition of micron-sized non-magnetic particles (e.g., silica, latex, etc.) in
the magnetic fluid enhances the magnetooptical properties resembling magnetorheological
(MR) fluids[20]. On the other side, ambiguity in the magnetooptical properties of non-magnetic
nanoparticles added magnetic fluids have been observed. For example, [10,11] demonstrates
that addition of silica nanoparticles suppresses the magnetic field induced birefringence and
structure formations, while, [12] reports enhancement. However, ambiguity in the magnetic
field induced change in the properties are not discussed yet. Also, the nature of interaction with
the magnetic particles is not discussed much. The present study focuses on the magnetic and
optical properties of colloidal silica (~12nm) nanoparticles added lauric acid stabilized
magnetic fluids. The study carried out by varying (i) concentrations of silica suspension, and
(ii) saturation magnetization (MS) 0.5099 kA/m (FN30) and 1.2855 kA/m (F30) of magnetite
magnetic fluid (MF). The crystallite size of magnetite is 8.4 nm. Double layer of lauric acid
surfactant will increase the size of the particles, but remains in nano-regime. The hydrodynamic
particle size determined for much diluted magnetic fluid is ~ 58 nm. Addition of silica in a
typical concentration increase this size to ~ 68 nm. This is the first evidence of interaction of
13
silica with lauric acid stabilized magnetite magnetic fluid. Further, thermogravimetric study
reveals the shift in the physi-adsorbed layer of lauric acid in presence of silica nanoparticles.
This shift confirms that silica nanoparticles interact with the second layer of lauric acid, which
provides stability to magnetite in the aqueous media. The magnetization measurements
indicates increment in the saturation magnetization, however, nominal decrease in the mean
magnetic size of FN30 based fluid, and nominal increase in the F30 based fluid were observed
in presence of silica nanoparticles. Also, the log-normal size distribution function 𝜎𝐷 increases
in FN30 based fluid, whereas it decreases in F30 based fluid. Addition of silica suspension
suppresses magnetic field induced birefringence (Δn) in FN30 based fluid. Interestingly, Δn
increases up to critical concentrations of silica suspension in F30 based fluid, and then it
decreases. The microscopic observations of magnetic field induced assembly indicates that the
chains formed in FN30 based fluids are long, thick and scattered, while in F30 based fluids
chains formed were comparatively short, thin, and dense. The orientation of chains and the
assembled structure does influence on the birefringence of magnetic fluid. It is summarized
that both, the suppression and enhancement, does depend on the ratio of silica and magnetite
particles volume fraction. The tunability of these properties are dedicated to the interaction of
silica with the lauric acid coated magnetite nanoparticles. This is first report establishing the
direct interaction with the silica and magnetite nanoparticles via lauric acid surfactant, and its
influence on the magnetic field induced properties.
ACKNOWLEDGMENT
This work was carried out under a grant No: EMR/2016/002278 sponsored by Science
and Engineering Research Board (SERB), Department of Science and Technology (DST),
India. The initial measurements of birefringence have been carried out by Abhay Padsala as a
part of M.Sc. (Physics) dissertation work. We acknowledge guidance provided by Prof.
Arbindo Ray for TGA analysis. We thanks to Dr. Kinnari Parekh for the help in magnetization
measurement.
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16
|
1905.01661 | 1 | 1905 | 2019-05-05T11:34:57 | Detection of low-conductivity objects using eddy current measurements with an optical magnetometer | [
"physics.app-ph",
"physics.atom-ph"
] | Detection and imaging of an electrically conductive object at a distance can be achieved by inducing eddy currents in it and measuring the associated magnetic field. We have detected low-conductivity objects with an optical magnetometer based on room-temperature cesium atomic vapor and a noise-canceling differential technique which increased the signal-to-noise ratio (SNR) by more than three orders of magnitude. We detected small containers with a few mL of salt-water with conductivity ranging from 4-24 S/m with a good SNR. This demonstrates that our optical magnetometer should be capable of detecting objects with conductivity < 1 S/m with a SNR > 1 and opens up new avenues for using optical magnetometers to image low-conductivity biological tissue including the human heart which would enable non-invasive diagnostics of heart diseases. | physics.app-ph | physics | Detection of low-conductivity objects using eddy current measurements with an
optical magnetometer
Kasper Jensen,1, 2, ∗ Michael Zugenmaier,2 Jens Arnbak,2 Hans
Staerkind,2 Mikhail V. Balabas,2, 3 and Eugene S. Polzik2
1School of Physics and Astronomy, University of Nottingham,
University Park, Nottingham NG7 2RD, England, United Kingdom
2Niels Bohr Institute, University of Copenhagen, Blegdamsvej 17, 2100 Copenhagen, Denmark
3Department of Physics, St Petersburg State University,
Universitetskii pr. 28, 198504 Staryi Peterhof, Russia
Detection and imaging of an electrically conductive object at a distance can be achieved by
inducing eddy currents in it and measuring the associated magnetic field. We have detected low-
conductivity objects with an optical magnetometer based on room-temperature cesium atomic vapor
and a noise-canceling differential technique which increased the signal-to-noise ratio (SNR) by more
than three orders of magnitude. We detected small containers with a few mL of salt-water with
conductivity ranging from 4 -- 24 S/m with a good SNR. This demonstrates that our optical mag-
netometer should be capable of detecting objects with conductivity < 1 S/m with a SNR > 1 and
opens up new avenues for using optical magnetometers to image low-conductivity biological tissue
including the human heart which would enable non-invasive diagnostics of heart diseases.
Optical magnetometers [1] based on laser-interrogation
of cesium or rubidium vapor can detect magnetic fields
with sub-fT/√Hz sensitivity [2 -- 5]. This high sensitivity
is particularly useful for biomedical applications where
tiny magnetic fields from the human body are detected.
For example, optical magnetometers have detected brain
activity [6 -- 8], the heartbeat from adults [9] and fetuses
[10, 11], and nerve impulses [12]. Optical magnetome-
ters can potentially also be used to non-invasively image
the electrical conductivity σ of the heart [13] using a
technique called magnetic induction tomography (MIT)
[14, 15]. In MIT of the heart, one or more coils are used
to induce eddy currents in the heart and an image of
the heart is constructed from measurements of the as-
sociated induced magnetic field. This is a challenging
task for several reasons, with the main one being the low
conductivity σ <
∼ 1 S/m of the heart [13].
Imaging of low-conductivity objects has previously
been done using coils for inducing and detecting the eddy
currents. Large containers (≈ 500 mL) with salt-water
with conductivity as low as 0.7 S/m has been imaged
[14, 16, 17], and more recently, the spinal column has
been imaged with a single scanning coil [18]. Optical
magnetometers have several advantages compared to in-
duction coils, in particular, they are widely tunable and
can achieve high sensitivity which is fundamentally inde-
pendent of the operating frequency. This is in contrast
to induction coils which are sensitive to the change in
magnetic flux and therefore have worse sensitivity the
lower the frequency. So far, optical magnetometers have
been used to image highly conductive metallic samples
(σ ≈ 106 -- 108 S/m) [19 -- 21] and also recently semicon-
ductor materials (σ = 500 -- 10.000 S/m) [22].
In this work, we introduce a differential technique
which improves the signal-to-noise ratio by more than
three orders of magnitude and then demonstrate detec-
tion of small containers with 8 mL of salt-water with
conductivity as low as 4 S/m. This represents an im-
provement by two orders of magnitude compared to pre-
vious results with optical magnetometers [22] and is a big
step towards magnetic induction tomography of biologi-
cal tissue with optical magnetometers.
We first discuss the standard approach for detecting
and imaging a conductive object, in our case a container
with salt-water. Later we will discuss the differential
technique. Consider a conductive object, a magnetome-
ter, and a coil [denoted coil 1 in Fig. 1(a)] that gener-
ates a primary magnetic field B1(r, t) oscillating at the
frequency ω = 2πν. The primary field induces eddy cur-
rents in the object which in turn generate a secondary
magnetic field Bec(r, t). One can measure the total field
B1(r, t) + Bec(r, t) and by scanning the magnetometer
or the object around it is possible to construct an image
of the conductivity [19 -- 22]. Varying the frequency ω can
be useful for 3D imaging [13] and for material character-
ization [20, 22].
It is instructive to note that the primary field is at-
tenuated while penetrating into the object due to the
skin effect. The skin depth is δ(ω) ≈p2/ (ωµ0σ), where
µ0 is the vacuum permeability and we assumed that the
object is non-magnetic. When the thickness t of the ob-
ject is much smaller than the skin depth t (cid:28) δ(ω), the
secondary field is 90◦ out of phase with the primary field
and the ratio α of the amplitude Bec(r0) of the secondary
field to the amplitude of the primary field B1(r0) at the
magnetometer position r0 is [14, 23, 24]
α ≡ Bec(r0)/B1(r0) ≈ −Aσωµ0 ≈ −2A/ [δ(ω)]2 ,
(1)
where A is a geometrical factor with dimensions of length
squared. For a (2 cm)3 container with salt-water with
conductivity σ = 10.7 S/m we calculate δ = 11 cm and
estimate α ≈ 1.5·10−4 [24] when the frequency is 2 MHz.
arXiv:1905.01661v1 [physics.app-ph] 5 May 2019
We demonstrate that it is possible to detect such a small
change in signal with an optical magnetometer when us-
ing a differential technique.
The key component of our magnetometer is a paraffin-
coated cesium vapor cell with a (5 mm)3 inner volume
[25]. The cesium atoms are spin-polarized in the x-
direction using circularly polarized pump and repump
light and are detected using linearly polarized probe light
[see Fig. 1(b) -- (c)]. We denote the total angular momen-
tum in the F = 4 hyperfine ground state manifold J
2
ested in detecting an oscillating magnetic field Brf (t) =
where NA is the number of cesium atoms. The atoms are
and full polarization corresponds to J = Jmax = 4NAbx,
placed in a static magnetic field B0bx and we are inter-
[Bc cos (ωt) + Bs sin (ωt)]by. The time evolution of the
atomic spins is modelled using the differential equation
[26]
dJ
dt
= γJ × B + ΓpJmax − (Γp + Γpr + Γdark) J,
(2)
where γ is the cesium gyromagnetic ratio, B = B0bx +
Brf (t), Γp is the rate of optical pumping, Γdark is the
decay rate in the absence of light, and Γpr is the decay
rate due to the probe light. We solve the differential
equation in the frame rotating around the x-axis at the
frequency ω. Denoting the spin-vector in the rotating
frame J0 and assuming a steady state dJ0
dt = 0, we find
the spin-components
J 0ss
x = Jss
J 0ss
y = −Jss
J 0ss
z = Jss
∆2 + (δω)2
∆2 + (δω)2 + γ2 (B2
c + B2
s ) /4
γ (Bc∆ + Bsδω) /2
∆2 + (δω)2 + γ2 (B2
c + B2
γ (Bs∆ − Bcδω) /2
c + B2
∆2 + (δω)2 + γ2 (B2
s ) /4
s ) /4
,
,
.
(3)
(4)
(5)
Here δω = Γp +Γpr +Γdark, ∆ = ω−ωL is the detuning of
the applied frequency from the Larmor frequency ωL =
γB0, and Jss = JmaxΓp/ (Γp + Γpr + Γdark).
z
y
and J 0ss
If we only consider Bc (i.e. Bs = 0), we see
that J 0ss
have dispersive and lorentzian line-
shapes, respectively, as a function of detuning. The to-
tal width of the resonance is δω ·q1 + [Bc/Bsat]2 where
Bc/(cid:16)1 + [Bc/Bsat]2(cid:17) which means that J 0ss
Bsat ≡ 2δω/γ. This means that the resonance is power-
If the
broadened by the oscillating magnetic field Bc.
magnetic field is on resonance (∆ = 0) we have J 0ss
z ∝
is only lin-
ear with the magnetic field for small fields Bc (cid:28) Bsat.
The atoms are probed with linearly polarized light
which due to the Faraday effect is rotated by an amount
proportional to the spin-component along the probe
propagation direction. The light polarization rotation
is measured with a balanced detection scheme leading to
the magnetometer signal
z
S(t) ∝ Jz(t) = sin (ωt) J0y(t) + cos (ωt) J0z(t).
(6)
(a) Setup for detecting eddy currents. (b) Optical
FIG. 1:
pumping and probing of the cesium atomic spins.
(c) Ce-
sium level scheme and laser wavelengths. The probe light is
1.6 GHz detuned.
The rotating spin-components J0y and J0z are extracted
from the magnetometer signal using lock-in detection at
the frequency ω. The lock-in provides an in-phase output
X ∝ J0z and an out-of-phase output Y ∝ J0y.
We characterize the magnetometer (without any con-
ductive object) by applying the magnetic field Brf (t) =
B1(r0, t) ≡ B1(r0) cos (ωt)by. Figure 2(a) shows the
lock-in outputs as a function of frequency. The X- and
Y -outputs have lorentzian and dispersive lineshapes cen-
tered around the Larmor frequency νL ≈ 1978 kHz as
expected from Eqs. (4) and (5) when Bc = B1(r0) and
Bs = 0. The small side resonances (towards lower fre-
quencies) are due to the non-linear Zeeman effect [27, 28].
The dataset labeled "B1" in Fig. 2(b) shows the lock-
in outputs when the oscillating magnetic field B1 is on
resonance (∆ = 0). We see that the mean values are
hXi = 1.33 V and hY i ≈ 0 and that there is a significant
amount of noise in the Y -output. In order to character-
ize the noise we calculate the Allan deviation [29] of the
Y -output which is roughly independent of averaging time
with the value ∆YAllan = 22 mV [see Fig. 2(c)]. The noise
is mainly due to temporal fluctuations in the B0-field. A
change ∆B0 in the B0-field shifts the Larmor frequency
which then changes the Y -output. Close to the Larmor
frequency Y ≈ a · (ν − νL) where a = −7.8 V/kHz [see
Fig. 2(a)] which means that a small change of the Y -
output of 22 mV corresponds to a shift in the Larmor
frequency of 2.8 Hz and a relative change in the B0-field
of ∆B0/B0 = 1.4 · 10−6. This small number illustrates
that an optical magnetometer requires a very stable B0-
z
B0
optical
pumping
x
Cs
probe light
probe
852 nm
repump
852 nm
pump
895 nm
(a)
container with
salt-water
Bec(r,t)
(b)
S(t)
F
343434 25
(c)
6 2P3/2
6 2P1/2
6 2S1/2
coil 1
B1(r,t)
Cs
y
z
B2(r,t)
coil 2
3
FIG. 2: (a) Lock-in outputs X and Y as a function of the frequency of the oscillating magnetic field B1. (b) Lock-in outputs
when ω = ωL. Each data point was integrated for 40 ms. Three data sets each with 500 points are shown: one where B1 was
applied, one where B2 was applied and one where 10 (B1 + B2) was applied. (c) Allan deviation of the Y -output when B1
was applied (top trace) and when 10 (B1 + B2) was applied (bottom trace).
field in order to precisely measure an oscillating magnetic
field.
When detecting conductive objects, the amplitude of
the secondary field is often much smaller than the ampli-
tude of the primary field. This is the case if the object
is much thinner than the skin depth t (cid:28) δ(ω) or if the
object is far away from the coil or magnetometer. For a
thin sample, the secondary field is 90◦ out of phase with
the primary field such that Bec(r0, t) = Bec(r0) sin (ωt)by
with Bec(r0) = αB1(r0) where α (cid:28) 1. When detecting
the total field Brf (t) = B1(r0, t) + Bec(r0, t), the field
from the eddy currents gives a signal in the Y -output
and the primary field gives a signal in the X-output
[see Eqs. (4) and (5) with ∆ = 0, Bc = B1(r0) and
Bs = Bec(r0)]. It is problematic to detect the total field
for several reasons. First of all, one would like to increase
the amplitude of the primary field as Bec(r0) ∝ B1(r0).
However, when B1(r0) >
∼ Bsat there is significant power
broadening which leads to reduced signal size and non-
linearities. Even if B1(r0) (cid:28) Bsat such that the mag-
netometer signal is linear and the lock-in outputs are
hXi ∝ B1(r0) and hY i ∝ Bec(r0) = αB1(r0), it is still
problematic to measure the total field as in most cases
both the signal and the noise in the magnetometer are
proportional to the amplitude of the total signal. In par-
ticular, if the dominant source of noise is the instability
in the B0-field, then both signal and noise are propor-
tional to B1(r0). If we detect the total field, the small-
est detectable field from the eddy currents is Bec(r0) =
αminB1(r0) with αmin ≈ ∆YAllan/hXi = 1.7·10−2. This
is clearly not sufficient to detect low conductivity objects
such as biological tissue or salt-water phantoms.
In order to mitigate the above mentioned problems, we
introduce a differential technique where we use a second
coil [denoted coil 2 in Fig. 1(a)] that generates a magnetic
field B2(r0, t) such that in the absence of the conductive
object, the total magnetic field B1(r0, t) + B2(r0, t) ≈ 0
at the position of the vapor cell. Coil 2 is placed fur-
ther away from the conductive object than coil 1 such
that eddy currents are mainly generated by coil 1 only.
With this technique, the magnetometer signal is zero in
the absence of the conductive object and the magnetome-
ter should not be affected by power broadening or non-
linearities as long as the field from the eddy currents
is smaller than Bsat [see Eqs. (4) and (5) with ∆ = 0,
Bc = 0 and Bs = Bec(r0)]. Furthermore, the signal-to-
noise ratio of the measurement will improve by a factor
1/α if the noise in the magnetometer is proportional
to the total signal. This is a dramatic improvement as
α ≈ 10−4 for our measurements on salt-water.
Figure 2(b) shows three data sets. We see the noisy
signal when B1 is applied. When the opposite magnetic
field B2 is applied, the lock-in outputs change sign. Ap-
plying both magnetic fields 10 (B1 + B2) ≈ 0 at the same
time (and increasing the amplitudes by a factor of 10)
gives lock-in outputs close to zero with significantly re-
duced noise. Coil 1 and 2 are connected to two outputs
of the same function generator and the amplitude and
phase of the two outputs can be precisely set in order to
zero the lock-in outputs. In Fig. 2(c) we see that the Al-
lan deviation is ≈ 130 times smaller for integration times
τ ≥ 1 s when applying both magnetic fields compared to
only applying B1. Taking the factor of 10 into account,
we find an improvement in signal-to-noise ratio of 1300
-1.5
-1
-0.5
X [V]
0
0.5
1
1.5
(b)
XY
B1
0.2
0
-0.2
Y [V]
1974
1978
1976
1980
frequency [kHz]
1982
B1
x 130
10(B1+ B2)
(a)
1.5
1
0.5
0
-0.5
-1
Signal [V]
10-2
10-3
10-4
Allan deviation [V]
(c)
B2
10(B1+ B2)
B1
0.2
-0.026
0.2
-0.2
-1.34
-1.3
-0.03
-0.004
0
-0.2
1.3
1.34
10-2
10-1
averaging time [s]
100
101
4
which agrees reasonably well with the expected value [24].
The maximum change in signal is plotted in Fig. 4(a) as
a function of conductivity and we observe a linear de-
pendence as expected from Eq. (1) confirming that the
small observed signals are due to the salt-water. We also
vary the applied frequency (while at the same time ad-
justing the bias field to fulfill the resonance condition
ω = γB0), and as shown in Fig. 4(b) we again observe
the expected linear behavior. Finally we vary the ampli-
tude of the applied field. The signal starts out growing
linearly but then some saturation occurs for higher ampli-
tudes [see Fig. 4(c)]. The data are fitted to the function
c · U/(cid:16)1 + [U/Usat]2(cid:17) and we extract the saturation pa-
rameter Usat = 5.2(2) V. This saturation is not expected
when using the differential technique. We note that when
only B1 is applied, saturation happens at 10 times lower
amplitudes. To avoid issues related to saturation, we
used the amplitude U = 1 V for all other differential
measurements (and U = 0.1 V for all measurements with
one coil only).
We emphasize that we detect the salt-water with good
signal-to-noise ratio (SNR). We calculate the SNR as the
maximum change in signal divided by the standard de-
viation (found from the data recorded with an empty
container). For the traces in Fig 3(b) -- (d) we have the
SNR of 0.8, 2.5 and 6.1 for the conductivities 3.8, 10.7
and 24.1 S/m. For these traces, the integration time was
only 40 ms. For the average traces in Fig 3(e) we have
the SNR of 6.4, 20, and 46. This demonstrates that our
setup should be capable of detecting objects with con-
ductivity < 1 S/m with a SNR > 1 and that it should be
possible to detect and image biological tissue which has
conductivity σ <
∼ 1 S/m with our optical magnetometer.
In conclusion, we have demonstrated detection of small
containers with salt-water with conductivity ranging
from 4 -- 24 S/m using an optical magnetometer and a dif-
ferential technique which improved the signal-to-noise by
more than three orders of magnitude. Our measurements
were performed inside a magnetic shield, however, we ex-
pect that the differential technique will yield a larger im-
provement in unshielded conditions [30] as there will be
more magnetic field noise which can be canceled. The
technique also gives a large improvement when detecting
objects with high conductivity (such as metal objects)
as long as the detected field from the eddy currents is
small compared to the primary field which for instance
is the case when the object is far away. We note that
during the preparation of this manuscript similar tech-
niques have been reported and used for imaging of struc-
tural defects in metal samples [31]. By further optimizing
the sensitivity and long term stability of our magnetome-
ter we expect that high-resolution imaging of biological
tissue will be possible. This will make optical magne-
tometers promising candidates for localizing conduction
disturbances in the heart allowing for non-invasive di-
FIG. 3: (a) -- (d): Real-time detection of salt-water. Each data
point is integrated for τ = 40 ms.
(e) Relative change in
signal using ≈ 20 averages. Data are binned according to
their position with one binned data point per 1 mm.
if detecting a low-conductivity object and a smallest de-
tectable relative signal of(cid:12)(cid:12)αdiff
the differential technique.
min(cid:12)(cid:12) ≈ 1.3× 10−5 when using
We now continue with detecting salt-water inside a
small container. The conductivity of the water can be
conveniently varied between 0 -- 24 S/m by changing the
concentration of salt. Using a motorized translation
stage, we scan the container 50 mm in the x-direction
a few mm above coil 1. Real-time traces of the Y -output
when the container is either empty or filled with salt-
water with varying conductivity are shown in Fig. 3(a) --
(d). With salt-water present, we clearly see a change in
the Y -output when the container is on top of coil 1 (at
the time around 10 s). The X-outputs (not shown) are
close to zero and do not change during the scan (within
the statistical uncertainties).
In order to reduce noise,
the container is scanned ≈ 20 times over coil 1 and the
recorded traces are averaged. Figure 3(e) shows the rela-
tive change in signal α for the averaged traces as a func-
tion of position. In order to guide the eye and to extract
the maximum change in signal, we fit the data with salt-
water to a Gaussian function. For the σ = 10.7 S/m
data we have the maximum change α = 1.0 · 10−4
σ = 3.8 S/m
10
20
time [s]
σ = 24.1 S/m
10
time [s]
20
-10
-12
-14
-16
-18
-22
-24
-26
-28
-30
0
0
(b)
Y [mV]
(d)
Y [mV]
empty
10
20
time [s]
σ = 10.7 S/m
10
time [s]
20
-24
-26
-28
-30
-32
-16
-18
-20
-22
-24
0
0
(a)
Y [mV]
(c)
Y [mV]
(e)
x 10-4
α
0
-0.5
-1
-1.5
-2
-2.5
0
empty
3.8 S/m
10.7 S/m
24.1 S/m
10
20
x [mm]
30
40
50
5
FIG. 4: (a) -- (b) Relative change in signal as a function of conductivity and applied frequency. Data are shown together with
linear fits. (c) Change in signal in mV as a function of the set amplitude U on the function generator connected to the two
coils. Data are shown together with a fit to the function c· U/(cid:0)1 + [U/Usat]2(cid:1) (solid line) and the linear part of the fit function
c · U (dashed line). A 1 V set amplitude corresponds to the fields 10B1 = −10B2 = 45 nT peak-to-peak amplitude.
agnostics of heart diseases such as, for example, atrial
fibrillation[13].
We would like to thank M. A. Skarsfeldt for prepar-
ing the salt-water solutions and B. H. Bentzen and S.-
P. Olesen for motivating discussions. This work was
supported by the Danish Quantum Innovation Cen-
ter (QUBIZ)/Innovation Fund Denmark, the ERC AdG
QUANTUM-N and the EU project MACQSIMAL.
∗ corresponding author
email: [email protected]
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ν ≈ 2 MHz
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ν ≈ 2 MHz
U = 1 V
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10
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Supplemental Material to "Detection of low-conductivity objects using eddy current
measurements with an optical magnetometer"
Kasper Jensen,1, 2, ∗ Michael Zugenmaier,2 Jens Arnbak,2 Hans
Staerkind,2 Mikhail V. Balabas,2, 3 and Eugene S. Polzik2
1School of Physics and Astronomy, University of Nottingham,
University Park, Nottingham NG7 2RD, England, United Kingdom
2Niels Bohr Institute, University of Copenhagen, Blegdamsvej 17, 2100 Copenhagen, Denmark
3Department of Physics, St Petersburg State University,
Universitetskii pr. 28, 198504 Staryi Peterhof, Russia
To calculate the magnetic field at the center of the
vapor cell (distance b from the container) due to the eddy
current in a ring of radius ρ0 we use the simple expression
for the on-axis magnetic field from a current loop
dB(y)
ec (b + τ0, 0) =
µ0ρ02dIec(ρ0)
2(ρ02 + (b + τ0)2)3/2 .
(S3)
The magnetic field at the position r0 of the center of the
vapor cell from all the eddy currents in the whole salt-
water sample is found by integrating the fields from the
individual rings
B(y)
ec (r0) =Z t
0 Z ρ
0
dB(y)
ec (b + τ0, 0)dρ0dτ0.
(S4)
We then add the magnetic fields induced by the individ-
ual windings of the coil with their respective distances.
Estimation of the induced magnetic field
We now estimate the magnitude of the induced mag-
netic field generated by the eddy currents in the salt-
water using a semi-analytical approach based on the cal-
culations in Ref. [S1]. The real container with salt-water
is cubic with (2 cm)3 inner volume. However, in the cal-
culations below, we will for simplicity assume that the
container is a cylinder with radius ρ and height t (also
called thickness). The eddy currents are generated by
the primary magnetic field B1 from coil 1 (see Fig. S1).
The container and the coil are aligned on the same axis
in the y-direction. The coil has multiple windings, but
we start by calculating the eddy currents generated by
a single winding of radius rw placed at a distance a
from the container. Assume that an alternating current
I(t) = I0 exp(iωt) with amplitude I0 and frequency ω
is running through the winding. First, we calculate the
induced eddy currents in a ring of radius ρ0 at a dis-
tance a + τ0 from the winding, and with radial and axial
thickness of dρ0 and dτ0, respectively. The induced eddy
current is
dIec(ρ0) = Jdρ0dτ0,
(S1)
where J is the current density. Note that J = σE, where
σ is the conductivity and E is the magnitude of the elec-
tric field. The induced electromotive force E is firstly
given by the integral of the electric field along a closed
loop E =H E · dl. Secondly, it is given by E = −dΦ/dt,
the time derivative of the magnetic flux Φ =R B1· dA of
the primary magnetic field B1 through the enclosed area.
An analytical expression for the magnetic field B1 from
the winding is given in Ref. [S2]. With the assumption
that this magnetic field changes instantaneously with the
current in the coil, we find
arXiv:1905.01661v1 [physics.app-ph] 5 May 2019
dIec(ρ0) =
−iωσ
ρ0
exp(iωt) Z ρ0
0
1 (a + τ0, ρ00)ρ00dρ00! dρ0dτ0,
B(y)
(S2)
where B(y)
1 (a + τ0, ρ00) is the amplitude of the y-
component of the magnetic field from the winding at axial
and radial distances a + τ0 and ρ00, respectively.
FIG. S1: Experimental setup with geometrical dimensions.
ρ = 20 mm
container with
salt-water
Bec(r,t)
t = 20 mm
a = 4 mm
coil 1:
20 windings in 4 layers
0.5 mm wire diameter
wound around cylinder
of 3 mm diameter
vapor cell centered
between coil 1 and 2
b = 21 mm
B1(r,t)
Cs
B2(r,t)
y
z
coil 2 similar to coil 1
The model predicts that the induced field is shifted in
phase by 90◦ with respect to the primary field, which
agrees with our measurements. We numerically calculate
the ratio of the amplitude of the induced magnetic field
to the amplitude of the primary magnetic field taking
all the windings of coil 1 into account. The calculation
yields
B(y)
ec (r0)/B(y)
1 (r0) = 1.5 · 10−4,
(S5)
using our experimental parameters (see Fig. S1), the fre-
quency of 2 MHz, and the conductivity of 10.7 S/m. The
calculated ratio is 50% higher than the experimentally
obtained value. The main uncertainty on the calculated
value stems from the distance between the container and
coil 1. This distance could only be determined with an
uncertainty of about 1 mm. An increase of the distance
between the container and coil 1 by only 1.4 mm would
explain the observed deviation of 50% between the cal-
culated and the experimental values.
2
∗ corresponding author
email: [email protected]
[S1] H. Griffiths, W. R. Stewart, and W. Gough. Magnetic
induction tomography: A measuring system for biologi-
cal tissues. Annals of the New York Academy of Sciences
873, 335 (1999).
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https://ntrs.nasa.gov/search.jsp?R=20140002333.
|
1812.01905 | 1 | 1812 | 2018-12-05T10:38:56 | Basic and extendable framework for effective charge transport in electrochemical systems | [
"physics.app-ph",
"physics.chem-ph"
] | We consider basic and easily extendible transport formulations for lithium batteries consisting of an anode (Li-foil), a separator (polymer electrolyte), and a composite cathode (composed of electrolyte and intercalation particles). Our mathematical investigations show the following novel features: (i) \emph{complete and very basic description of mixed transport processes} relying on a neutral, binary symmetric electrolyte resulting in a non-standard Poisson equation for the electric potential together with interstitial diffusion approximated by classical diffusion; (ii) \emph{ upscaled and basic composite cathode equations allowing to take geometric and material features of electrodes into account}; (iii) \emph{the derived effective macroscopic model can be numerically solved with well-known numerical strategies for homogeneous domains} and hence does not require to solve a high-dimensional numerical problem or to depend on a computationally involved multiscale discretisation strategies where highly heterogeneous and realistic, nonlinear, and reactive boundary conditions are still unexplored. We believe that the here proposed basic and easily extendible formulations will serve as a basic and simple setup towards a systematic theoretical and experimental understanding of complex electrochemical systems and their optimization, e.g. Li-batteries. | physics.app-ph | physics |
Basic and extendable framework for effective charge transport in electrochemical
systems
Jeta Mollaa,∗, Markus Schmucka
aMaxwell Institute for Mathematical Sciences and
School of Mathematical and Computer Sciences,
Heriot-Watt University,
EH144AS, Edinburgh, UK
Abstract
We consider basic and easily extendible transport formulations for lithium batteries consisting of an anode (Li-foil),
a separator (polymer electrolyte), and a composite cathode (composed of electrolyte and intercalation particles).
Our mathematical investigations show the following novel features: (i) complete and very basic description of
mixed transport processes relying on a neutral, binary symmetric electrolyte resulting in a non-standard Poisson
equation for the electric potential together with interstitial diffusion approximated by classical diffusion; (ii) upscaled
and basic composite cathode equations allowing to take geometric and material features of electrodes into account ;
(iii) the derived effective macroscopic model can be numerically solved with well-known numerical strategies for
homogeneous domains and hence does not require to solve a high-dimensional numerical problem or to depend on
a computationally involved multiscale discretisation strategies where highly heterogeneous and realistic, nonlinear,
and reactive boundary conditions are still unexplored. We believe that the here proposed basic and easily extendible
formulations will serve as a basic and simple setup towards a systematic theoretical and experimental understanding
of complex electrochemical systems and their optimization, e.g. Li-batteries.
Keywords:
lithium batteries, multiscale modeling, Butler-Volmer equations, homogenization, electrode design
1. Introduction
Energy storage systems play an increasingly important role for reliable, efficient, and preferably green energy and
delivery in developed countries and also between them. Two major developments make affordable and endurable
energy storage a necessity: (i) the global awareness of climate change and as such the need for renewable and low
CO2 energy-consumption/production; (ii) the realisation and affordability of electric mobility (cars and buses). In
order to make storage systems more affordable, it is important to have a proper physical, chemical, and mathematical
understanding of the processes involved in order to give systematic (i.e. based on variational principles) guidance
on design optimization. Since electric cars are expected to become a multi-billion dollar buisness until 2030 and
Li-ion batteries play a major role in this development, we aim here to provide a fundamental, basic, and effective
macroscopic description of an active electrode.
Due this expected demand, recently an increasing interest in mathematical modeling of lithium batteries
emerged. Well-known and commonly used macroscale models were developed by Newman and collaborators al-
ready decades ago, e.g.
In order to improve
the battery performance, it will be crucial to connect material properties and the geometry of microstructure to
current-voltage characteristics. This has recently led to an increased interest in the systematic derivation of effective
macroscopic charge transport equations [3, 4]. In fact, for the full nonlinear Poisson-Nernst-Planck equations first
rigorous error estimates have been derived in [5]. Related research for porous and heterogeneous media are [6, 7, 8]
for instance.
[1] and [2], which serves as basis for the present investigations.
We consider a basic and easily extendible non-re-chargeable Li-battery consisting of a polymer electrolyte/
separator Dp, a composite cathode Dc, a Li-foil Γl as anode, and a cathodic current collector Γr, see Fig. 1 (Left).
The composite cathode Dc can be identified as the periodic extension of a statistically defined, characteristic
∗Corresponding author
Email addresses: [email protected] (Jeta Molla), [email protected] (Markus Schmuck)
URL: compsyst.com (Markus Schmuck)
Preprint submitted to Journal
December 6, 2018
Figure 1: Left: Schematic of lithium battery with separator Dp, (homogenized) composite cathode Dc, anode Γl, and cathodic current
collector Γr. Right: Microscopic composite cathode Dc := Dǫ
s as a periodic extension of a reference cell Y := Yp ∪ Ys of length ℓ.
p
∪ Dǫ
p ∩ ∂Dǫ
s such that Dc := Dǫ
reference cell Y of length ℓ, see Fig. 1 (Right). This leads to a so-called heterogeneity parameter ǫ := ℓ
L where
L is the length of the cathode. Hence, Dc is highly heterogeneous and composed of an electrolyte Dǫ
p and a solid
intercalation phase Dǫ
s. The interface between the polymer and solid phase is denoted by
I ǫ
ps := ∂Dǫ
s. We model Li-diffusion in neutral, binary symmetric electrolytes by the dilute solution theory [1]
and Li-transport in solid intercalation hosts is described by classical diffusion. Based on this basic formulation, we
systematically derive effective macroscopic cathode equations using the method of asymptotic two-scale expansions
[9]. The central quantities of interest are the evolution of Li-density in dependence of an applied electrical current
Ia and the resulting electric potential. As shown in Fig. 1, we apply the following notation for the Li-density c and
the potential ψ in various domains D ∈ {Dp, Dǫ
p ∪ Dǫ
p, Dǫ
s}, i.e.,
cp ,
cǫ
p ,
cǫ
s ,
in D = Dp ,
in D = Dǫ
p ,
in D = Dǫ
s .
ψp ,
ψǫ
p ,
ψǫ
s ,
in D = Dp ,
in D = Dǫ
p ,
in D = Dǫ
s .
(1)
ψ :=
Under an applied discharging current density ia := Ia/Γs,ǫ
electrolyte phases D = Dp and D = Dǫ
p, respectively, is governed by
r , charge transport in the homogeneous and heterogeneous
c :=
∂c
∂t = ∆c
∇c · n = g
−div (c∇ψ) = −R∆c
ψ = hD
∇ψ · n = hN
in D ,
on ∂D ,
in D,
on Γp
D,
on Γp
N = ∂D \ Γp
D ,
(2)
D+−D−
where n is an outward pointing normal vector, εp and εs are the electrical permittivities of Dǫ
s, respectively,
(z+M+−z−M−)F with Di, Mi, and zi being diffusion, mobility, and charge number of species i ∈ {+, −}. The
R is
symmetry assumption on the electrolyte implies z+ = −z−. The Li density cp and electric potential ψp in D = Dp
satisfy the same system (2) as cǫ
p for boundary conditions defined as follows
p in D = Dǫ
p and Dǫ
p and ψǫ
BV
βlRl
0
∇cǫ
βlRps
BV
0
g :=
where
on Γl ,
on Γt ∪ Γb ,
p · n on Γp,ǫ
l ∩ ∂D ,
on I ǫ
ps ,
on Γc,ǫ
t ∪ Γp,ǫ
r ∪ Γc,ǫ
b
hD :=nψa − ηa
,
on Γl , hN :=
εs
∇ψǫ
εp
∇ψp · n
0
0
s · n on I ǫ
l ∪ ∂Dp) ,
ps ∪ (Γs,ǫ
l ∩ ∂Dp ,
on Γp,ǫ
on Γb ∪ Γt ,
on Γc,ǫ
b ∪ Γc,ǫ
t ∪ Γp,ǫ
r
describes Butler-Volmer (BV) reactions across the interface I ǫ
ps and
ips
BV = ipsRps
αaF
BV = ips(cid:16)e
RT ηǫ − (cm
s − cǫ
s)e− αc F
RT ηǫ(cid:17) ,
il
BV = ilRl
BV = il(cid:16)e
2
αa F
RT ηa − e− αc F
RT ηa(cid:17) ,
,
(3)
(4)
(5)
p
p − cǫ
and il = F kαa
p(cid:1)αc cαa
(4) -- (5) are ips = F kps(cid:0)cm
electrochmical reactions at the anode-electrolyte interface Γl. The exchange current densities in the BV equations
are anodic and
cathodic reaction rates, respectively. The parameters αa and αc are anodic and cathodic transfer coefficients,
respectively, and cm
s, respectively. Moreover, ηa := ψa − ψp
is the local value of the surface overpotential and ψa denotes the potential at the anode (here simply Li-foil) and
similarly, for the the equilibrium potential U the overpotential across I ǫ
p − U . Furthermore, the
parameters βp := ipsLref
make the Butler-Volmer equations dimensionless for a reference length
cref Dp
Lref , a reference concentration cref, and Li-diffusion constant Dp in the electrolyte.
s are the maximum lithium densities in Dǫ
p(cid:1)αa (cǫ
and βl := ilLref
cref Dp
p)αc where kαa
a
c (cid:0)cm
ps is ηǫ := ψǫ
p and cm
p and Dǫ
and kαc
c
p − cǫ
s − ψǫ
a kαc
It remains to describe electron and Li transport in Dǫ
s, i.e.,
s
a1
∂cǫ
∂t = ∆cǫ
s
∇cǫ
∇cǫ
s · n = −ǫβsRps
s · n = 0
−div (σs∇ψǫ
s) = 0
BV
σs∇ψǫ
σs∇ψǫ
s · n = ǫβψRps
s · n = asIa
BV
in Dǫ
s,
on I ǫ
ps,
on Γs,ǫ
r ,
in Dǫ
s,
on I ǫ
ps,
on Γs,ǫ
r .
(6)
The Li-diffusion times τs := L2
define the dimensionless parameter a1 := τs/τp for Li-diffusion constants Ds and Dp in Dǫ
respectively. σs is the electrical conductivity of Dǫ
as := Lref
F
RT make the (4) after upscaling dimensionless. Finally, σref is a reference conductivity.
s. The parameters βs := ipsLref
and τp := L2
cref Ds
ref
Dp
ref
Ds
s and D ∈ (cid:8)Dp, Dǫ
p(cid:9),
and βψ := ipsLref
σref
F
RT with
in the solid phase and the polymer/electrolyte phase, respectively,
σref Γs,ǫ
r
Of central interest in battery modelling and optimization is the effective macroscopic description of electrodes.
To this end, we provide a systematic upscaling framework for active electrodes such as Dc = Dǫ
s by passing to
the limit ǫ → 0 and by relying on crucial microscopic ingredients via (2) -- (6) such as geometry and specific material
characteristics. The homogenization is explained in Section 3 and the results are stated in the next section.
p ∪ Dǫ
2. Main results
Our main results depend on the following well-accepted concept of local equilibrium [10, 11].
Definition 2.1. The chemical potential µp(Cp, Ψp) = log Cp − RΨp is said to be in local thermodynamic equilib-
rium, if and only if it holds that
∂µp(Cp, Ψp)
∂xk
0
∂µp(Cp,Ψp)
∂xk
in Yp,
in Dc,
(7)
=
for every k ∈ N, 1 ≤ k ≤ d, and the upscaled quantities {Cp, Ψp}, which are independent of the microscale y ∈ Y.
Remark 2.1. Local thermodynamic equilibrium is used in many different applications [12, 13, 14]. Definition 2.1
accounts for the fact that the macroscopic variables are so slow compared to the fast processes on the microscale
(fast scale y := x/ǫ ∈ Yp) that their variations disappear thereon but not so on the (slow) macroscale x ∈ Dc.
Note that after upscaling the phases Dǫ
preserving the corresponding volume fractions. The specific boundaries are defined in Fig. 1.
s are super-imposed on the whole composite cathode Dc while
p and Dǫ
Main results: (Upscaled cathode equations) Under local thermodynamic equilibrium (Definition 2.1), the
microscopic formulations (2) and (6) turn after upscaling into the following effective composite cathode formulations
p ∂Cp
∂t = div(cid:16) Dp∇Cp(cid:17) + ¯βpRps
Dp∇Cp · n = ∇cp · n
Dp∇Cp · n = 0
BV
−div(cid:16)Cp Dψp ∇Ψp(cid:17) = Rdiv(cid:16) Dp∇Cp(cid:17)
Dψp ∇Ψp · n = ∇ψp · n
Cp Dψp∇Ψp · n = 0
3
in Dc,
on Γc
l ,
on Γc \ Γc
l ,
in Dc,
on Γc
l ,
on Γc \ Γc
l ,
(8)
and
BV
q ∂Cs
Ds∇Cs · n = 0
∂t = div(cid:16) Ds∇Cs(cid:17) + ¯βsRps
−div(cid:16) Σ∇Ψs(cid:17) = ¯βψRps
Σ∇Ψs · n = asIa
Σ∇Ψs · n = 0
BV
in Dc,
on Γc,
in Dc,
on Γc
r,
on Γc \ Γc
r,
(9)
where p = Yp
Dp = { ¯dp
Y , q = a1(1 − p), ¯βp = Λβp, ¯βs = Λβs, ¯βψ = Λβψ, and Λ =
i,k=1, Dψp = { ¯dψp
i,k=1, and Σ = {¯sik}d
i,k=1, Ds = { ¯ds
ik }d
ik}d
ik}d
i,k=1 are given by
I Y
ps
Y . The effective material tensors
¯dw
ik =
1
Y
d
Xj=1ZYw(cid:18)δik − δij
∂ξk
w
∂yj(cid:19) dy,
¯sik =
1
Y
d
Xj=1ZYs
σs δik − δij
∂ξk
ψs
∂yj ! dy,
(10)
for w ∈ {p, ψp, s}, Yψp = Yp, and Yψs = Ys. The correctors ξk
following reference cell problems
m(y), m ∈ {p, ψp, s, ψs}, 1 ≤ k ≤ d, solve the
ξk
m :
d
−
∂
∂ξk
m
∂yj
∂yi (cid:16)δij
− ek(cid:17) = 0
Pi,j=1
m − ek(cid:1) · n = 0 on I Y
(cid:0)∇ξk
m is Ym-periodic with RY ξk
ps
and ξk
in Ym,
m dy = 0.
A more detailed discussion and extensions will appear in [15].
(11)
3. Derivation of effective macroscopic equations
The diffusion and elliptic equations, e.g. (2)1 -- (2)2 and (6) are standard in homogenization theory (see [9, 16,
17, 18] for instance). However, equation (2)5 shows an unexpected form due electro-neutrality and therefore we
state the relevant steps of the derivation. With the asymptotic two-scale expansions [17, 18]
uǫ(t, x) = u(t, x, y) = U (t, x, y) + ǫu1(t, x, y) + ǫ2u2(t, x, y) + . . . ,
for u ∈ {cp, ψp, ψs}
and the following operators
A0 = −RLyy(1),
B0 = −Lyy(Cp),
A1 = −R [Lxy(1) + Lyx(1)] ,
A2 = −RLxx(1),
B1 = −(cid:2)Lxy(Cp) + Lyx(Cp) + Lyy(c1
p)(cid:3) ,
B2 = −(cid:2)Lxx(Cp) + Lxy(c1
p) + Lyx(c1
p) + Lyy(c2
p)(cid:3) ,
where Lxy(u) =Pd
i,j=1
∂
∂yj(cid:17), we obtain after collecting terms of equal power in ǫ the following problems
∂
∂xi (cid:16)uδij
O(ǫ−2) :(B0Ψp = −A0Cp
∇yΨp · n = 0 on I Y
ps and Ψp is Yp − periodic,
in Yp,
(12)
(13)
(14)
(15)
(16)
O(ǫ−1) :(B0ψ1
p + B1Ψp = −A0c1
p − A1Cp
p · n = −∇xΨp · n on I Y
∇yψ1
ps and ψ1
p is Yp − periodic,
B0ψ2
p + A0c2
p = −B2Ψp − B1ψ1
p − A1c1
p − A2Cp
∇yψ2
and ψ2
p · n − ∇xψ1
p is Yp − periodic.
p · n = εs
εp (cid:0)∇yψ1
s + ∇xΨs(cid:1) · n on I Y
ps
O(ǫ0) :
4
in Yp,
in Yp,
System (14) immediately implies independence of Ψp on the microscale y ∈ Yp. This motivates to make the following
ansatz
ψ1
p = −
ξk
ψp (y)
∂Ψp
∂xk
,
d
Xk=1
(17)
which after inserting into (15) together with Definition 2.1 leads to the following cell problem for 1 ≤ k ≤ d, i.e.,
ξk
ψp :(cid:26)−
d
Pi,j=1
∂
∂yi (cid:18)δij
∂ξk
ψp
∂yj
− ek(cid:19) = 0 in Yp,
(18)
with boundary conditions as stated in (11). Finally, we derive the effective macroscopic equation for Ψp via the
Fredholm alternative [19, 20]. That means, problem (16) has a unique solution if it holds that
ZYp(cid:2)−B1ψ1
p − B2Ψp − A1c1
p − A2Cp(cid:3) dy = 0,
(19)
where we already neglect possible boundary contributions which will disappear after rewriting. Using (18), the well-
known standard definition for Dp, and after defining the tensor Dψp = {dψp
i,k=1 by dψp
ik }d
ik =
∂ξk
d
allows us to rewrite (19) as the following homogenized equation for the associated electrical potential Ψp, i.e.,
Pj=1RYp(cid:18)δik − δij
ψp
∂yj (cid:19) dy,
−
d
Xi,k=1
∂
∂xi (cid:18)Cp Dψp
∂Ψp
∂xk(cid:19) = R
d
Xi,k=1
∂
∂xi (cid:18) Dp
∂Cp
∂xk(cid:19) .
(20)
4. Conclusions
We have established a basic charge transport formulation capturing the essential electrochemical features of
lithium batteries (i.e., non-rechargeable) with the goal of having a convenient and easily extendible prototype
framework for the investigation of the influence of active electrode materials (here the composite cathode). We
believe that the presented results (upscaled formulation) allow to study the influence of material and geometric
properties on the current-voltage behaviour of Li-batteries and provide also the fundamental basis for subsequent
extensions towards modelling of ageing and cycling dynamics.
In fact, the formulation introduced will be of
interest to researchers doing battery modelling as we provide a complete set of boundary conditions for a general
prototype model allowing for various extensions such as an active anode, different reaction models as well as
extensions for ageing and cycling dynamics. Finally, this novel model framework relies on basic physcial and
electrochemical principles and hence serves as a promising theoretical and efficient computational tool to investigate
Li-batteries. From a computational point of view, it allows us to apply powerful numerical strategies well-known and
developed for homogeneous domains in contrast to a possible multiscale discretization strategy requiring demanding
implementations for boundary conditions on interfaces due to highly heterogeneous domains which itself imply costly
constraints such as small enough mesh sizes.
Acknowledgements
We acknowledge financial support from EPSRC Grant No. EP/P011713/1.
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6
|
1712.01354 | 1 | 1712 | 2017-10-18T14:56:58 | Total Ionizing Dose Effects on Threshold Switching in 1T-Tantalum Disulfide Charge-Density-Wave Devices | [
"physics.app-ph",
"cond-mat.mes-hall"
] | The 1T polytype of TaS2 exhibits voltage-triggered threshold switching as a result of a phase transition from nearly commensurate to incommensurate charge density wave states. Threshold switching, persistent above room temperature, can be utilized in a variety of electronic devices, e.g., voltage controlled oscillators. We evaluated the total-ionizing-dose response of thin film 1T-TaS2 at doses up to 1 Mrad(SiO2). The threshold voltage changed by less than 2% after irradiation, with persistent self-sustained oscillations observed through the full irradiation sequence. The radiation hardness is attributed to the high intrinsic carrier concentration of 1T-TaS2 in both of the phases that lead to threshold switching. These results suggest that charge density wave devices, implemented with thin films of 1T-TaS2, are promising for applications in high radiation environments. | physics.app-ph | physics | 1
Total Ionizing Dose Effects on Threshold Switching in
1T-TaS2 Charge Density Wave Devices
G. Liu, Member, IEEE, E. X. Zhang, Senior Member, IEEE, C. D. Liang, Student Member, IEEE, M.
A. Bloodgood, T. T. Salguero, D. M. Fleetwood, Fellow, IEEE, and A. A. Balandin, Fellow, IEEE
Abstract - The 1T polytype of TaS2 exhibits voltage-triggered
threshold switching as a result of a phase transition from nearly
commensurate to incommensurate charge density wave states.
Threshold switching, persistent above room temperature, can be
utilized in a variety of electronic devices, e.g., voltage controlled
oscillators. We evaluated the total-ionizing-dose response of thin
film 1T-TaS2 at doses up to 1 Mrad(SiO2). The threshold voltage
changed by less than 2% after irradiation, with persistent self-
sustained oscillations observed through the full irradiation
sequence. The radiation hardness is attributed to the high
intrinsic carrier concentration of 1T-TaS2 in both of the phases
that lead to threshold switching. These results suggest that charge
density wave devices, implemented with thin films of 1T-TaS2, are
promising for applications in high radiation environments.
Key Words - charge density waves, radiation hardness, 1T-
TaS2, threshold switching
I. INTRODUCTION
S
emiconductor devices are susceptible to radiation damage
in space and high-energy accelerator environments [1],
[2]. Electron–hole pairs generated in the oxide during
total-ionizing-dose (TID) irradiation can accumulate in oxide
layers and at interfaces in field-effect transistors (FETs) [3].
These can result in shifts of the threshold voltage, increases in
static current leakage, errors in bit reading, and, eventually, in
complete circuit and/or system failure [1], [2]. Strategies for
increasing the radiation resilience of electronic devices
typically include improving oxide quality [4], adopting
silicon-on-insulator
technology
III-V
transistors with no oxide
[6]. Commercial
microelectronic devices can often withstand TID exposure
[5], and/or using
layers
to about 1-100 krad(SiO2), and radiation hardened devices
typically can withstand doses well above 100 krad(SiO2) [7].
Two-dimensional (2D) materials have shown potential for
various electronic applications [8]. Some of us have recently
demonstrated a quasi-2D 1T-TaS2 device, which operates as a
voltage controlled oscillator at room temperature (RT). The
physical principal of operation of this oscillator is the
transition between two charge density wave (CDW) phases
controlled by voltage bias [9], [10]. The transition between the
nearly commensurate (NC-CDW) phase and incommensurate
(IC-CDW) phase reveals itself as an abrupt change in
resistivity of the device channel accompanied by hysteresis.
The carrier concentrations in the two CDW states are very
high: 1021 cm-3 and 1022 cm-3 for the high resistive NC-CDW
and low resistive IC-CDW phases, respectively [11], [12].
Unlike conventional FETs, the 1T-TaS2 device is a two-
terminal device in which the switching is controlled by the
source-drain voltage rather than the gate voltage. No gate
oxide is needed for its operation.
In this work, we evaluate the TID response of 1T-TaS2
the current-voltage (I-V)
CDW devices by examining
characteristics under X-ray
to
1 Mrad(SiO2). We find that the threshold voltage, VTH, for the
abrupt resistance change shifts by only ~2%, the resistance of
the CDW states changes by less than ~2 % (low resistive state)
and ~6.5 % (high resistive state), and the self-sustained
irradiation at doses up
The work of A. A. Balandin and G. Liu was supported, in part, by the
National Science Foundation (NSF) through the Emerging Frontiers of
Research Initiative (EFRI) 2-DARE project: Novel Switching Phenomena in
Atomic MX2 Heterostructures for Multifunctional Applications (NSF EFRI-
1433395), the Semiconductor Research Corporation (SRC) and the Defense
Advanced Research Project Agency (DARPA) through the Center for
Function Accelerated nanoMaterial Engineering (FAME), and by the UC-
National Lab Collaborative Research and Training Program (UC-NL CRT).
Work at Vanderbilt was partially supported by the Defense Threat Reduction
Agency Basic Research Award No. HDTRA1-14-1-0042.
A. A. Balandin and G. Liu are with the Nano-Device Laboratory (NDL)
and Phonon Optimized Engineered Materials (POEM) Center, Department of
Electrical and Computer Engineering, Bourns College of Engineering,
University of California – Riverside, Riverside, California 92521 USA (e-
mail: [email protected] ; web-site: http://balandingroup.ucr.edu/ ).
E. X. Zhang, C. D. Liang and D. M. Fleetwood are with the Department of
Electrical Engineering and Computer Science, Vanderbilt University,
Nashville, TN 37235 USA (e-mail: [email protected]).
M. A. Bloodgood and T. T. Salguero are with the Department of Chemistry,
University of Georgia, Athens, Georgia 30602 USA.
Figure 1: Threshold switching I-V characteristics of a 1T-TaS2 device at room
temperature. The h-BN cap on the 1T-TaS2 channel is to prevent oxidation
during fabrication and air exposure. The left inset shows a schematic diagram
of the device structure. The right inset is an optical image of the tested device.
The scale bar is 3 m.
voltage oscillations in this 1T-TaS2 oscillator function well
through
results
demonstrate the promise of 1T-TaS2 CDW devices for use in
high radiation environments.
sequence. These
irradiation
full
the
II. EXPERIMENTAL RESULTS
1T-TaS2 devices were fabricated using thin films exfoliated
from bulk crystals grown by the chemical vapor transport
method [9]. A thin film of 1T-TaS2 was placed on a Si
1
2
substrate with a top layer of 300-nm SiO2. To protect the 1T-
TaS2 thin film channels from oxidization during fabrication
and exposure to air, we transferred 10 nm hexagonal boron-
nitride (h-BN) thin films on top of the channels (see insets to
Fig. 1). The electrodes were defined by electron beam
lithography. To contact the 1T-TaS2 thin film underneath the
h-BN cap, we opened the contact window by dry etching
before Pd/Au metal deposition. The thickness of 1T-TaS2
channel layer (H = 20 nm) has been verified by atomic force
microscopy. Details of the device fabrication are reported
elsewhere [9].
1T-TaS2 devices exhibit a pronounced threshold switching
as the voltage exceeds certain threshold values, VH for the
positive scan and VL for the negative scan. Typical I-V
characteristics of a tested device at RT are shown in Fig. 1. As
the voltage is scanned from 0 V to 1 V, a sudden current jump
is clearly observed as the voltage exceeds the threshold value
VH = 0.94 V for this device. At voltages larger than VH, the I-V
curve has a slope larger than below threshold, indicating a
resistance switch from a high resistive state to a low resistive
state. As the voltage is scanned back from 1 V to 0 V, the
current switches out of the low resistive state to the high
resistive state at VL = 0.89 V. This switching occurs at the
electrically driven phase transition between the NC-CDW and
IC-CDW phase in 1T-TaS2 [9]. Since the switching can take
place as long as the temperature is below the NC-IC phase
transition at 350 K, this operation is stable at RT.
The 1T-TaS2 device was irradiated with 10-keV X-rays at
RT. The I-V characteristics of the device were measured after
each irradiation step. Fig. 2(a) shows that up to 1 Mrad(SiO2),
the I-V characteristics reveal only a minor change in the
threshold voltage. Extracted values of VH and VL are plotted as
functions of dose in Fig. 2(b). Over the entire exposure range,
VH and VL change by less than 20 mV, 2.1% and 2.3% of their
initial values, respectively. Threshold current values, IH and IL,
corresponding to VH and VL, change by 2.6 % and 9.6 %,
respectively, over the full range of dose. Fig. 2(c) shows that
neither the NC-CDW nor the IC-CDW states are sensitive to
X-rays. The high resistance value RHigh, extracted from the
linear region in the I-V curve before switching and the low
resistance value RLow, extracted from the I-V curve after
switching, change by 6.5 % and 2.1 %, respectively, up to 1
Mrad(SiO2).
We also used the circuit shown in Fig. 3(a) to check
whether the 1T-TaS2 CDW device could function as a self-
sustaining oscillator before and after 1 Mrad(SiO2) irradiation.
The circuit starts to produce an oscillating signal as the
voltage across the 1T-TaS2 device exceeds VH, as shown in
Fig. 3(b). The load resistor (1 kΩ used here) provides negative
feedback that stabilizes the oscillations. The frequency
increases slightly from 1.56 MHz to 1.59 MHz after
irradiation, and the amplitude of the oscillations increases
from 0.75 V to 0.95 V. The change in performance observed
in Fig. 3(b) is due primarily to a change in DC offset during
pre- and post-irradiation oscillation measurements, rather than
a change in device performance. We also examined Raman
spectra of the device channel before and after irradiation to see
whether changes in material properties may have occurred, as
can happen in graphene as a result of X-ray induced reactions
with oxygen, for example [13]. In Fig. 4, the main Raman
peaks in the range of 150 cm-1 - 450 cm-1, corresponding to
optical phonon modes, do not show any substantial changes.
The bulk and folded optical phonon modes, characteristic for
this material [14], [15], remained unchanged before and after
irradiation. Hence, we conclude that 1T-TaS2 CDW devices
are capable of performing well in an ionizing radiation
environment.
Figure 3: (a) Circuit schematic diagram of a self-sustaining oscillator
implemented with one 1T-TaS2 device and a load resistor. (b) Oscillation
waveform before and after 1 Mrad(SiO2) X-ray irradiation.
Figure 2: TID response of 1T-TaS2 devices up to 1 Mrad(SiO2). (a) I-V curves
measured after each X-ray irradiation step. The inset shows a zoomed-in view
of the threshold switching region. (b) Threshold voltages, VH and VL, and
threshold currents, IH and IL, as function of dose. (c) Extracted resistance at
the high resistance and low resistance states as a function of dose.
III. DISCUSSION
We attribute the 1T-TaS2 device resilience to TID exposure
primarily to the two-terminal device design and the very high
carrier concentration. The two-terminal device operation is
2
3
based on the resistance switching controlled by the source-
drain voltage, rather than by inducing excess charge via a
separate gate voltage through the oxide layer. With no gate or
electric field, the charge yield in the h-BN is low [3], and the
resulting changes in device characteristics are smaller than
those seen in gated graphene-based transistors similarly
passivated by h-BN [16]. The other important feature of 1T-
TaS2 is the very high carrier concentration in both NC-CDW
and IC-CDW states, on the order of 1021 cm-3 and 1022 cm-3,
respectively [11], [12]. These values are much higher than
those in conventional semiconductor devices; they are closer
to those of metals and/or graphene away from the Dirac point
[13], [17].
TaS2. The electrical characteristics were found to be very
robust to X-ray radiation, with only minimal changes observed
in switching threshold voltages and currents, and high- and
low-state resistances. Moreover, the ability of the device to
function as a self-sustaining oscillator was maintained through
the full irradiation sequence. The radiation tolerance of these
devices is attributed to the two-terminal design and inherently
high carrier densities in both the high and low resistant states.
These results show
that charge density wave devices,
implemented with thin films of 1T-TaS2, are promising for
applications in high radiation environments.
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|
1911.12784 | 1 | 1911 | 2019-11-28T16:51:49 | Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture | [
"physics.app-ph"
] | Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite memristive behavior for large-density non-volatile memory and neuromorphic computing. However, the strict requirements of combining high magnetoresistance, stable intermediate states and spin-polarized current switching in a single device pose difficulties in physical implementation. Here, we experimentally demonstrate a nanoscale spin-torque memristor based on a perpendicular-anisotropy magnetic tunnel junction with a CoFeB/W/CoFeB composite free layer structure. Its tunneling magnetoresistance is higher than 200%, and memristive behavior can be realized by spin-transfer torque switching. Memristive states are maintained by robust domain wall pinning around clusters of W atoms, where nanoscale vertical chiral spin textures could be formed through the competition between opposing Dzyaloshinskii-Moriya interactions and the fluctuating interlayer coupling caused by the Ruderman-Kittel-Kasuya-Yosida interaction between the two CoFeB free layers. Spike-timing-dependent plasticity is also demonstrated in this device. | physics.app-ph | physics | Spin-torque memristors based on perpendicular magnetic tunnel
junctions with a hybrid chiral texture
Xueying Zhanga,b,1, Wenlong Caia,1, Mengxing Wanga,1, Kaihua Caoa, Tianrui Zhanga, Houyi
Chenga,b, Shaoxin Lia,b, Daoqian Zhua, Weisheng Zhaoa,b,2
aFert Beijing Institute, BDBC, School of Microelectronics, Beihang University, Beijing 100191, China
bBeihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
1These authors contributed equally to this work
2To whom correspondence should be addressed. Email: [email protected]
Abstract
Spin-torque memristors were proposed in 2009, which could provide fast, low-power and infinite
memristive behavior for large-density non-volatile memory and neuromorphic computing. However,
the strict requirements of combining high magnetoresistance, stable intermediate states and spin-
polarized current switching in a single device pose difficulties in physical implementation. Here, we
experimentally demonstrate a nanoscale spin-torque memristor based on a perpendicular-anisotropy
magnetic tunnel junction with a CoFeB/W/CoFeB composite free layer structure. Its tunneling
magnetoresistance is higher than 200%, and memristive behavior can be realized by spin-transfer
torque switching. Memristive states are maintained by robust domain wall pinning around clusters of
W atoms, where nanoscale vertical chiral spin textures could be formed through the competition
between opposing Dzyaloshinskii-Moriya interactions and the fluctuating interlayer coupling caused
by the Ruderman -- Kittel -- Kasuya -- Yosida interaction between the two CoFeB free layers. Spike-
timing-dependent plasticity is also demonstrated in this device.
Keywords: spintronics memristor magnetic tunnel junction chiral spin texture neuromorphic computing
1
Significance
In this research, a nanoscale all-spin-torque memristor based on perpendicular-anisotropy
magnetic tunnel junction with W-inserted dual free layers is experimentally demonstrated and the
spike-timing-dependent plasticity functionality is validated in a single spintronic device. In addition,
we demonstrate that vertical chiral vortices could form under the energy competition between the
Ruderman -- Kittel -- Kasuya -- Yosida interaction and the opposing interfacial Dzyaloshinskii-Moriya
interactions in ferromagnet/heavy metal/ferromagnet structure. This new spin texture is shown to be
the origin of the memristive behavior by creating robust domain wall pinning effect in the free layer.
This work paves a way for the practical application of spintronic device on neuromorphic computation,
which shows great potential to overcome the Von Neumann bottleneck.
2
Memristors are considered to be essential elements for realizing neuromorphic computing(1 -- 3).
Traditional memristors rely on ion motion and ionic valence changes in materials(1, 4, 5). However,
most of them suffer from certain limitations, such as finite endurance or relatively low switching
speed(1). Spin-torque memristors, in which the state is modulated by a spin-polarized current, provide
an alternative solution(6). The concept of a spin-torque memristor, in which the domain wall (DW)
motion in the free layer (FL) of a magnetic tunnel junction (MTJ) is used to obtain a memristive
magnetoresistance, was first proposed in 2009(7). Nevertheless, no real device with all-spin-torque
operation has been experimentally reported until now. The intermediate tunneling magnetoresistance
(TMR) is difficult to stabilize against thermal activation or stimulus currents, especially in devices
with nanoscale dimensions(8). An FL in the partially switched state with DWs has usually higher
energy than monodomain states because both Heisenberg exchanges and magnetic anisotropy favor a
collinear spin texture. Several possible solutions have been proposed, such as creating an intermediate
state with the assistance of shape anisotropy(9) or manipulating memristive switching by means of
DW pinning in some complex geometries(10, 11) or by engineering the reference layer(12). However,
these solutions require a large device size or an external magnetic field for the practical realization of
memristive behaviors. The interfacial Dzyaloshinskii-Moriya interaction (DMI)(13, 14), a form of
antisymmetric exchange that favors a chiral spin texture, makes it possible to obtain intrinsically stable
noncollinear magnetic structures in nanometer-scale magnet and provides new means to realize
memristive MTJs with nanoscale dimensions(15, 16).
In this work, we experimentally demonstrate a nanoscale spin-torque memristor based on a
perpendicular-anisotropy MTJ with W-inserted dual FLs. A high TMR ratio, a low resistance-area
product (RA), and spin-polarized-current-induced switching are achieved. The memristive behavior
originates from robust DW pinning, which could arise from the fluctuations of the DW surface energy
around clusters of W atoms under the competition between the Ruderman -- Kittel -- Kasuya -- Yosida
3
(RKKY) interaction and the interfacial DMIs(13, 14). The spike-timing-dependent plasticity (STDP)
functionality is also validated based on this spin-torque memristor.
Results
Dual-FL MTJ device
Figure 1A introduces the layer structure used to fabricate the memristive MTJ: synthetic
antiferromagnet (SAF)/W (0.25)/CoFeB (1.0)/MgO (0.8)/CoFeB (1.3)/W (0.2)/CoFeB (0.5)/MgO
Fig. 1. Layer structure and electric test of the device. (A) The stack structure of the MTJ. (B) Cross-sectional TEM
image showing the layer quality of the stack. (C) Optical microscopy image of an MTJ with four electrodes. (D) STT-
induced switching as measured by means of a long voltage pulse with τ = 100 ms. A 20-mT perpendicular field was
constantly applied during the test to compensate the bias of stray field from the reference layer, the same is also true
throughout the manuscript.
4
(0.75)/Ta (3.0). The stack was prepared with a Singulus magnetron sputtering machine and was
annealed at 390°C for 1 hour after deposition. In contrast to traditional MTJs with a single-FL structure,
in this study, an atomic-thickness W layer was inserted between two FLs during sputtering deposition
to engineer the FL properties(17, 18). A transmission electron microscopy (TEM) image of the
multilayer stack is presented in Fig. 1B.
The dual-FL MTJ film was patterned into circular nanopillars with a 200-nm radius (R) using
electron beam (e-beam) lithography and Ar ion milling and was instrumented with gold electrodes, as
shown in Fig. 1C. Then, spin-transfer torque (STT)-induced magnetization switching was
demonstrated using a voltage pulse with a duration (τ) of 100 ms, presenting multiple intermediate
states (Fig. 1D). A TMR ratio as large as 200% and an RA of 7 Ω μm2 were obtained at room
temperature. The switching current was on the order of MA cm-2.
Memristive tunneling magnetoresistance
In order to demonstrate the stability of these intermediate states, we measured the resistance by
applying a small reading voltage of 0.01 V after each STT-switching pulse, as shown in Fig. 2A. The
small reading voltage allows to avoid the voltage-dependent effect of the antiparallel resistance (19),
and the intermediate states showed correspondence with those in Fig. 1D, confirming the good stability
of intermediate states. In addition, another STT switching measurement was performed using trains of
shorter voltage pulses with τ=200 ns, as shown in Fig. 2B. During this measurement, far more
intermediate states appeared compared with the measurement shown in Fig. 1D. In addition, as can be
observed from the minor loops, the intermediate states are stable even when the applied voltage is
reversed. Figure 3 gives the current-voltage loop obtained by a train of τ=200 ns switching voltage
pulses. One can find that once the applied voltage increases over a threshold value, the resistance of
the device varies quasi-continuously, which is typical memristive behaviors.
We also checked the stability of the intermediate states against external magnetic fields. First, the
resistance-magnetic field hysteresis loop in a device with R=200 nm was measured at a low
5
temperature, as shown in Fig. 2D. As expected, the coercive field is very large in such a small device
and no intermediate state was observed. On the other hand, after creating an intermediate state with a
STT current and then applying an external field, we found that the intermediate state remained stable
under a relatively weak external magnetic field. The field needed to destroy the intermediate state was
approximately 15.5 mT after offsetting the bias caused by the stray field from the reference layer.
Fig. 2. Spin-torque-induced and magnetic-field-induced switching of an MTJ with R=200 nm. (A) Resistance-
voltage loop. In this measurement, a train of voltage pulses with a duration of 100 ms and an increase of 0.02 V per
step was applied. The resistance was measured using a voltage of 0.01 V after each stimulus pulse. (B) Resistance-
voltage minor loops. In this measurement, short voltage pulses with τ=200 ns were applied. (C) Current-voltage loop
obtained using a train of voltage pulses with τ=200 ns. The resistance was measured when switching voltage was
applied in both B and C. (D) Black: full resistance-perpendicular field hysteresis loop of the device; red and blue:
stability of intermediate state against external magnetic field at 35.5K.
6
Synaptic plasticity
Due to its two-terminal nanoscale structure, tunable resistance, and non-volatile operation, this
spin-torque memristor could be used for neuromorphic computing as synaptic devices(20). The
plasticity, an essential property of an electronic synapse(21), was investigated by applying two
different types of spike stimulation. Figure 3A shows the evolution of the resistance during the
potentiation and depression cycles induced by a series of voltage pulses with τ = 200 ns. The magnitude
Fig. 3. Synaptic plasticity. (A) Plasticity explored by means of a ramped train of pulses. The upper plot shows the
applied voltage pulses: a series of pulses with a τ = 200 ns duration and an increase of 0.01 V per step from 0 V to 6.2
V/-5.5 V was applied as the stimulus signal (shown in blue in the inset). A voltage pulse (0.05 V) with τ = 1 μs (red in
the inset) was applied after each stimulus pulse as the detection signal. The lower plot shows the corresponding detected
resistance. (B) Plasticity explored by means of identical pulses (0.54 V/-0.44 V) with τ = 200 ns. The resistance was
characterized using a low-voltage pulse (0.05 V) with τ = 1 μs. (C) The pre-spike and post-spike waveforms and the
across voltage obtained as the superposition of the pre- and post-spikes. (D) An example of the resistance variation
corresponding to an across voltage with Δt = 80 μs. (E) STDP learning curve. The changes in the synaptic weight were
measured with different Δt values ranging from -110 μs to 140 μs.
7
of the spike voltage was increased in a stepwise manner, as shown in the top panel of Fig. 3A. When
the applied pulsed voltage was above a certain threshold value (0.39 V/-0.37 V), the resistance of the
device began to change gradually. After each spike pulse, the resistance was measured by a small
voltage pulse (0.05 V and 1 μs), as shown in the inset of Fig. 3A. This non-volatile quasi-continuous
variation is evidence of long-term functional synaptic plasticity(2). In the second case, the plasticity
was explored by means of a train of identical voltage pulses with τ = 200 ns, as shown in Fig. 3B. The
spike amplitude was chosen to be slightly larger than the threshold value to achieve analog resistance
variation.
Based on the plasticity of the synaptic device, STDP(22, 23), which serves a fundamental learning
function for artificial neural networks, was investigated. The pre-spike was a triangular-shaped voltage
pulse constructed of several short pulses (τ = 200 ns) with a maximum amplitude lower than the
threshold value, as shown in Fig. 3C. The post-spike consisted of two opposite-voltage pulses (τ = 200
ns and ±0.2 V). The delay time (Δt) is defined as the time elapsed from zero (the center time of the
pre-spike) to the center time of the post-spike. The value of Δt is positive (negative) when the pre-
spike stimulation is applied before (after) the post-spike. Figure 3D shows the resistance variation
corresponding to an across voltage with Δt = 80 μs, which is shown in Fig. 3C. The change in the
synaptic weight is defined as the ratio of the initial resistance before spiking to the resistance after
spiking. The weight change was characterized under different Δt values ranging from -110 μs to 140
μs, and the results are presented in Fig. 3E. When the pre-spike occurs before (after) the post-spike,
the synaptic weight increases (decreases), and a reduced effect are observed with a larger (smaller) Δt.
Discussion
Robust DW pinning effect in the dual FLs
The magnetoresistance of an MTJ depends on the relative magnetic state of the FL with respect
to the pinned layer (PL)(19). A stable intermediate state is rare in traditional single-FL MTJs with
submicron dimensions because once magnetic switching begins, the nucleated DW moves forward
8
immediately and leads to the complete switching(8). By contrast, in the dual-FL MTJ fabricated here,
the existence of multiple intermediate states suggests that the magnetic switching of the dual FLs is
not complete at once.
To obtain a deeper insight into the FL properties, we deposited a MgO/CoFeB/W/CoFeB/MgO
film with the same structure as that in the MTJ stack (called FL film in the following). The deposition
and annealing conditions remained the same. As seen from the hysteresis loop of this film (see Fig.
4A) and the MTJ stack (see the supplementary material 1), the dual FLs are globally ferromagnetically
coupled and show good perpendicular magnetic anisotropy (PMA). An intermediate state of the MTJ
should not be caused by inconsistent magnetization of the upper FL (UpFL) and the lower FL (LwFL).
However, the field-induced magnetization reversal of the FLs appears to be gradual, indicating that the
DW propagation field in this film is much larger than the DW nucleation field. Next, both the field-
induced and current-induced DW motion in the FL film were explored using Kerr microscopy. Figure
4B shows a dendritic trace after DW motion induced by a magnetic field of 3.6 mT, which is much
rougher than that for an ordinary single-layer CoFeB film with low pinning effect(24). The velocity of
the field-induced DW motion was measured and it leaves the thermally activated creep regime (25)
when the driving field reaches μ0HC=16.3 mT, as shown in Fig. 4C. This critical field (conventionally
called intrinsic pinning field of DW) can be seen as an indicator of the DW pinning strength in a
magnetic material, below which DW motion is not possible without the assistance of thermal
activation(25). This value is consistent with the field (15.5 mT) required to destroy an intermediate
state in our MTJ device at low temperature, confirming that the intermediate states are stabilized by
the strong DW pinning effect of the film.
In addition, we prepared microwires based on MgO/CoFeB/W/CoFeB/MgO stacks and tried to
observe STT-driven DW motion. As shown in Fig. 4D, after the creation of several DWs via a short
magnetic field pulse, an in-plane current was applied. No DW motion was observed even when the
current density reached 2.4×1011 A/m2. When the current was further increased, maze domains
9
Fig. 4. Strong DW pinning in a MgO/CoFeB/W/CoFeB/MgO film (FL film). (A) The perpendicular hysteresis loop
of the FL film. (B) Kerr image showing the dendritic trace of the domains after DW motion driven by a perpendicular
field of 3.6 mT in the FL film. (C) Velocities of DW motion driven by a perpendicular field in FL film (in blue circle)
and in a W/CoFeB(1.0 nm)/MgO single-magnetic layer film (in red diamond ) and the linear fit using the creep law.
(D) DW behavior driven by a current pulse in microwire patterned based on the FL film. The 1st image shows the
magnetic state after DW creation using a field pulse, and the 2nd and 3rd images show DW states after the application
of a current pulse.
appeared, which was probably a result of demagnetization caused by Joule heating. This result further
confirms the difficulty of magnetic switching via STT-induced DW motion in the FLs of our device.
Hybrid DW structure induced by the interfacial DMIs and the RKKY interaction
10
Conventionally, a heavy metal/CoFeB/MgO stack is very soft(24). Here, we measured the DW
motion velocity in a W/CoFeB(1 nm)/MgO single ferromagnetic layer film for comparison and found
the intrinsic pinning field was 4.1 mT, much lower than that for double FL films, as shown in Fig. 4C.
In the dual FLs of our device, the pinning strength is increased by a factor of 4 after the insertion of
the W layer. This strong pinning effect cannot be merely explained by DW energy fluctuations caused
by the roughness of the interfaces since both the number of interfaces involved and the total thickness
of CoFeB are doubled in the dual-FL film compared with the single-magnetic layer film(26).
As seen from the hysteresis loop, the 0.2-nm-thick W spacer results in a globally strong
ferromagnetic exchange coupling between the UpFL and LwFL, consistent with the experimental
measurements of S. Parkin(27). On the other hand, as seen from the energy-dispersive X-ray
spectroscopy (EDS) mapping of our multilayer stack shown in Fig. 5A, the spatial distribution of W
atoms is not homogeneous, with some stochastic overlap and some breakage. This inhomogeneous
distribution of W may be caused by atom diffusion during the annealing process. According to the
RKKY theory, two ferromagnets (FMs) separated by a thin metal layer can exhibit periodic ferro-
/antiferromagnetic exchange, where the period depends on the type and lattice structure of the metal.
Based on the experimental data reported by S. Parkin(27) and our fitting results according to the RKKY
law, two FMs neighboring a W spacer begin to exhibit an antiferromagnetic coupling when the W
thickness reaches approximately 0.44 nm, and the coupling reaches its peak at a W thickness of 0.55
nm, corresponding to approximately two atomic layers(28). Therefore, although the two FM layers in
the FL structure of our stack exhibit global ferromagnetic exchange, the stochastic overlapping of the
W atoms (W clusters) may lead to an antiferromagnetic exchange in some local regions.
On the other hand, considerable DMIs can arise at a W/CoFeB interface, because of the spin-orbit
coupling(29, 30), and also at a CoFeB/MgO interface, which may be related to the charge transfer and
electric field at this interface(31 -- 33). This interaction is especially large for an Fe-rich CoFeB
composition, as in our case, and promotes a chiral magnetic texture in the magnetic layer(34, 35). The
11
chirality favored by the DMI depends on the materials and the direction of symmetry breaking. We
have measured the DMI in films with different symmetry breaking via asymmetric DW motion when
both the perpendicular field and in-plane field are applied. It is found that the DMI strength in a
MgO/CoFeB(1.7 nm)/W film is about 0.45 mJ/m2 and favors a left-handed chirality and the DMI
strength in a W/CoFeB(1 nm)/MgO film is as large as 0.65 mJ/m2 while favors a right-handed chirality
(see supplementary materials S1). These results suggest that in the dual FLs of our MTJ, opposite
chiralities are favored for the DWs in the UpFL and LwFL. On the one hand, because of the global
Fig. 5. DW profile in CoFeB/W/CoFeB multilayers dominated by the competition between interlayer coupling
and opposing DMIs. (A) EDS mapping showing the inhomogeneous distribution of W atoms in the multilayer stack.
(B) Side-view DW profiles under different interlayer coupling strengths obtained via micromagnetic simulations. (C)
Variations in the azimuth angle of the DW magnetization and the surface energy as functions of the interlayer coupling
strength. (D) Schematic showing the chiral vortex DW structure around a W cluster.
12
ferromagnetic coupling of the two FLs, the total DMI cancels out (only 0.02 mJ/m2 in the dual-FL film)
and the DW configuration shows no obvious chirality (see the supplementary material S1). In contrast,
when the exchange coupling between the UpFL and LwFL is weak or even antiferromagnetic in a local
region where W atoms overlap, the DW chiralities in each FL should be determined by the
corresponding DMIs. The magnetization in the DWs center in the two FLs are opposite, and a chiral
vortex could form around the W cluster.
We simulated the magnetic states of two 1-nm-thick FM layers separated by a 0.2-nm spacer using
the OOMMF code, as shown in Fig. 5B. In the first (second) case, the ferromagnetic coupling strength
𝐽𝑒𝑥 was set to 1 mJ/m2 (or 0.01 mJ/m2), where a positive (negative) sign of Jex means ferromagnetic
(antiferromagnetic) coupling. The interfacial DMI constant D was set to 0.5 mJ/m2 in both cases, with
a negative (positive) sign in the UpFL (LwFL). The results confirm the above analysis: with strong
ferromagnetic coupling, a Bloch DW configuration with parallel magnetization forms in the two FLs;
with weak ferromagnetic coupling, a vertical vortex with a chirality dominated by the DMIs is formed.
We calculated the DW energy when interlayer exchange coupling and DMIs are involved. For
simplicity, we suppose that the two FLs are totally mirror symmetric with respect to the spacer layer.
The tilt angle of the magnetization in the center of a DW (𝑚⃗⃗ DW) with respect to the transverse direction
is θ (－θ) in the LwFL (UpFL), where 𝜃 ∈ [0, 𝜋/2]. The total magnetic energy of the DW is(36, 37)
𝜎𝐷𝑊 = 𝜎0 + 𝐽𝑒𝑥(1 − cos 2𝜃) ∆ 𝑡𝑀⁄ − 2𝜋𝐷 sin 𝜃 + 𝜎𝑑 (1)
where 𝜎0 = 4√𝐴𝑒𝑥𝐾𝑒𝑓𝑓 is the surface energy of a Bloch DW with θ=0(38), as described in the first
case in Fig. 5B, without considering the DMI energy, Aex is the exchange stiffness, Keff is the effective
anisotropy constant, ∆ is the DW width, 𝑡M is the thickness of a single FL, and 𝜎𝑑 is the energy
associated to the dipole-dipole interaction. According to our numerical calculation and fitting, the last
term can be approximately described by a simple expression 𝜎𝑑 ≈ 𝐴(1 + cos 2𝜃), where A≈0.78
13
mJ/m2 in our case (39) (see the supplementary material S1). By minimizing the DW surface energy
using
∂𝜎𝐷𝑊
∂θ
= 0, we obtain the value of θ at equilibrium:
arcsin
𝜃 ≈ {
𝜋𝐷𝑡𝑀
2𝐽𝑒𝑥Δ−2A∗𝑡𝑀
𝑓𝑜𝑟
𝜋𝐷𝑡𝑀
2𝐽𝑒𝑥Δ−2A∗𝑡𝑀
< 1
(2)
𝜋
2
𝑜𝑡ℎ𝑒𝑟𝑤𝑖𝑠𝑒
For 𝐾eff = 1.25 × 105𝐽/𝑚3, as measured via vibrating sample magnetometry (VSM) for the FLs,
𝐴ex = 1.3 × 10−11J/m (40), Δ=5 nm (37), tM=1 nm, and D=±0.5 mJ/m2, the variations of θ and the
DW surface energy as functions of the interlayer coupling strength Jex are plotted in Fig. 5C. As the
interlayer coupling strength decreases below 0.35 mJ/m2, the DW profile transforms to a chiral vortex,
and the DW surface energy drops rapidly. In fact, the formation of the chiral vortex DW minifies both
the energy associated with DMIs and with dipole-dipole interactions (39) (see also the supplementary
material S1).
According to our fitting results based on the data reported by S. Parkin(27), the interlayer coupling
strength of two FM layers neighboring an intervening W layer decreases from 0.6 mJ/m2 to -0.03
mJ/m2 as the thickness of the W increases from 0.2 nm to 0.55 nm. In our dual-FL MTJ with a W
spacer, when a moving DW encounters a W cluster with a dimension at the same order as the DW
width, the DW configuration will locally transform into a chiral vortex, as illustrated in Fig. 5D.
According to the above calculations, the surface energy of a chiral vortex DW configuration is several
times smaller than that of a Bloch-type DW configuration. This energy difference serves as a deep
energy well and will robustly pin the DWs (see the video showing this effect in supplementary material
S2). Therefore, the energy wells induced by the balance between the DW configurations of the Bloch
type and the chiral vortex type around W clusters should be the origin of the observed strong pinning
effect.
Moreover, the dendritic domains after field-driven DW motion or after the application of a strong
current also suggest that the strong demagnetizing field due to the thick FLs in this sample (1.8 nm in
14
total) plays a non-negligible role. This demagnetizing effect also helps to maintain a multidomain state
in the FLs (see the supplementary materials S1).
Conclusion
In conclusion, a spin-torque memristor with a high TMR ratio, a low RA, a low working current,
and a nanoscale size has been obtained by engineering an atomic-thickness W spacer between dual
FLs in an MTJ. A memristive TMR has been achieved during STT-induced switching in both
directions. By observing the field- and current-induced DW dynamics in the FL structure and
comparing the stability of the intermediate TMR states at low temperature, we have demonstrated that
the memristive behavior of the device originates from a robust DW pinning effect in the FLs.
Furthermore, through theoretical calculations and micromagnetic simulations, we have proven that a
chiral vortex DW can form around a cluster of W atoms because of the opposing interfacial DMIs and
the RKKY interaction. The observed strong DW pinning could be caused by the energy well formed
when the structure of a moving DW transfers between a coupled trivial Bloch configuration and a
vertical chiral vortex configuration due to the inhomogeneous distribution of W atoms. The synaptic
performance of the device has been studied systematically, and the STDP functionality has been
validated. The realization of this nanoscale spin-torque memristor offers new opportunities for the
application of spintronic devices in neuromorphic computing.
Materials and Methods
1. Device preparation
The MTJ films were deposited by a Singulus TIMARIS 200 mm magnetron sputtering machine
at a base pressure of 3.75×10-9 Torr. Circular nanopillars were patterned by e-beam lithography,
followed by Ar ion milling and SiO2 insulation. After the lift-off procedure, Ti/Au electrodes were
evaporated for measurements.
15
2. Characterization of the film
Fundamental properties of the MTJ stack and the FL stack, including the saturation magnetization
and the perpendicular anisotropy, were both measured via VSM. In addition, the domain structure and
DW motion in the FL film were observed using a Kerr microscope with a 400-nm resolution. A fast-
perpendicular field with a rise time of sub-microsecond, which is produced by a small magnetic coil,
is used to measure the DW motion velocities in the magnetic film. The strength of DMIs in films with
different structure asymmetries are measured via analyzing DW motion velocities when out of plane
magnetic fields and in-plane fields are applied simultaneously (see supplementary material S1).
3. Electrical measurements of the device
The setup for the electrical characterization of the spin-torque memristor consists of a Lake Shore
CRX-VF cryogenic probe station, Keithley 6221 current sources, and 2182 nanovolt meters.
4. Micromagnetic simulation
Micromagnetic simulations based on the OOMMF code were performed to observe the magnetic
texture and domain wall pinning effect in the dual FLs. Simulations based on Mumax3 software were
performed to quantify the effect of the demagnetizing field on the domain wall structure. Both
simulations are based on solving the Landau -- Lifshitz -- Gilbert equation.
Acknowledgments
The authors thank the National Natural Science Foundation of China (Grant No. 61627813, 61571023),
the International Collaboration Project B16001, the National Key Technology Program of China
2017ZX01032101, the VR innovation platform from Qingdao Science and Technology Commission,
and Magnetic Sensor innovation platform from Laoshan District for their financial support of this work.
Author contributions
W.Z. initialized, conceived and supervised the project; M.W. fabricated the devices, W.C., S.L. and
W.Z. performed the measurements; X.Z. performed the simulation and calculation; X.Z., W.C., M.W
16
and W.Z. wrote the manuscript; K.C. optimized the e-beam lithography flow and TEM characterization;
H.C. optimized the film deposition technique; T. Z. and D.Z. analyzed the data. All authors discussed
the results and implications.
Competing interests
The authors declare no competing interests.
Additional information
Two supplementary materials are available for this paper.
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Supplementary materials
1.
More information about the stack
(1)
Saturation magnetization and perpendicular anisotropy energy
Both the in-plane and out-of-plane (perpendicular) hysteresis loops of the film used to fabricate the
magnetic tunnel junction (MTJ) were measured via vibrating sample magnetometry (VSM), as shown
in Fig. S1A. Both the free layer (FL) structure and the reference layer exhibited good perpendicular
magnetic anisotropy (PMA). Furthermore, the dual FLs were globally well ferromagnetically coupled.
After producing a film (FL film) with the same structure as the FL structure of the MTJ stack, we
characterized the in-plane (Fig. S1B) and out-of-plane (Fig. 4A in the main text) hysteresis loops. The
saturation magnetization MS of the FLs in the MTJ was estimated based on the perpendicular hysteresis
Fig. S1. (A) Perpendicular and in-plane hysteresis loops of the multilayer stack used to fabricate the MTJ, measured
via VSM at room temperature. (B), In-plane hysteresis loop of the FL film measured via VSM.
loop of the FL film. MS was estimated to be approximately 1.0×106 A/m2 at room temperature.
The perpendicular anisotropy constant KU of the FLs was estimated based on the in-plane field
hysteresis loop: the critical field that rotates the magnetization of the FLs to the in-plane direction is
considered as the effective anisotropy field 𝜇0𝐻K,eff. The uniaxial anisotropy energy was calculated as
follows(1): 𝐾𝑈 =
1
2
𝜇0𝐻𝐾,𝑒𝑓𝑓𝑀𝑆 +
1
2
𝜇0𝑀𝑆
2 . At room temperature, the effective anisotropy field
𝜇0𝐻K,eff of the FL was measured to be 250 mT, and the anisotropy KU was estimated to be 7.5×105
J/m3.
(2)
Dzyaloshinskii-Moriya interactions (DMIs) in films with different symmetry breaking
21
We have measured the DMI in two films with different symmetry breaking, i.e., a MgO/CoFeB(1.7
nm)/W film and a W/CoFeB(1 nm)/MgO film. At the same time, the overall DMI in the
MgO/CoFeB/W/CoFeB/MgO dual FLs film is also measured. All films are annealed at the same
temperature. Measurements are based on the asymmetric domain wall (DW) motion when driven by a
perpendicular field under the application of a varying in-plane field(2, 3). High perpendicular fields
𝐵⊥ are used so that the DW moves beyond the thermally activated creep regime. Pinning effects
enhanced by the application of in-plane fields(4) have no influence in this regime and the measured
DMI is believed to be more accurate(3). Results are shown in Figure S2. In each measurement, the
perpendicular remains unchanged while the in-plane field varies step by step. The in-plane field under
which the DW velocity reaches a minimum value can be regarded as the effective DMI field HDM.
Accordingly, the strength of the overall DMI can be estimated as 𝐷 = 𝜇0𝐻𝐷𝑀𝑀𝑆√𝐴𝑒𝑥 𝐾𝑒𝑓𝑓
⁄
. Here,
𝐴ex is the Heisenberg exchange stiffness and 𝐾eff is the effective anisotropy constant.
It is found that the 𝜇0𝐻𝐷𝑀 in the W/CoFeB/MgO film is as large as 65 mT and the 𝜇0𝐻𝐷𝑀 in the
MgO/CoFeB/W film is about 45 mT. The corresponding DMI constant is estimated to be 0.65 mJ/m2
and 0.45 mJ/m2. Here, MS=1.0×106 A/m2, 𝐴ex = 1.3 × 10−11J/m (5) and 𝐾eff = 1.25 × 105𝐽/𝑚3 is
used. While the asymmetry of DW motion shows opposite direction, suggesting that the sign of the
DMI in these two films is different. On the contrary, in the MgO/CoFeB/W/CoFeB/MgO dual FLs
film, although some slight asymmetry of the DW motion velocities was observed, the 𝜇0𝐻𝐷𝑀 was
found to be as small as 2 mT and the estimated DMI constant was calculated to be D=0.02 mJ/m2. This
is a very weak value. This weak DMI can be explained by
the symmetry of
the
MgO\CpoFeB\W\CoFeB\MgO structure. Although a considerable DMIs exist at each MgO\CoFeB
and CoFeB\W interface, the overall DMI cancels out.
22
Fig. S2. Measurements of the DMI in a three different film structures based on asymmetrical DW motion when an in-plane field
is applied. The film structure is: (A) W/CoFeB/MgO; (B) MgO/CoFeB/W; (C) MgO/CoFeB/W/CoFeB/MgO. The magnitude of
perpendicular field 𝐵⊥ used is given in upper right of each figure.
(3)
Ruderman -- Kittel -- Kasuya -- Yosida (RKKY) exchange through the W spacer layer
S. Parkin measured the RKKY exchange of two magnetic layers separated by a W layer(6). The
structure used was Si\Cr (3.5 nm)\[Co (1.5 nm)\W (x nm)]16\Cr (2 nm), with in-plane magnetic
anisotropy in the Co layer. The following results were reported: the first antiferromagnetic coupling
peak occurs at tW=0.55 nm, and the antiferromagnetic coupling strength is 0.03 mJ/m2 at this peak.
The thickness of W spacer that corresponds to this first antiferromagnetic region is approximately 0.3
nm.
We fitted these data using the well-known RKKY law(7):
𝐽(𝑡𝑊) = 𝐴 ∙ 𝐹(2𝑘𝐹𝑡𝑊) (S-1)
23
𝐹(𝑥) =
𝑥 cos 𝑥−sin 𝑥
𝑥4
(S-2)
where A is a parameter related to the magnitude of the coupling strength and kF is a parameter related
to the oscillation period. The fitting results are shown in Fig. S3. From this fit, we can conclude that
the ferromagnetic coupling between the two magnetic layers is Jex=0.6 mJ/m2 at tW=0.2 nm and drops
to zero at tW=0.43 nm.
Fig. S3. Strength of the RKKY coupling Jex of two ferromagnet (FM) layers as a function of the thickness of an
intervening W spacer layer. The black squares represent the data reported by S. Parkin [Phys. Rev. Lett. 67, 3598 (1991)],
and the red line represents the fitting results based on the RKKY theory.
2.
Magnetic static energy for coupled Bloch and chiral vortex DW configurations
The local dipole-dipole interactions between the DWs in the two FLs promote the formation of a
chiral vortex DW because this type of DW configuration has a lower magnetic static energy than a
coupled Bloch DW(8). Since the theoretical calculation of this energy is very difficult, here, we
perform a numerical calculation using the micromagnetic simulation software MuMax3(9).
The simulated structure is shown in Fig. S4. The thicknesses of the lower FL (LwFL), the W spacer
and the upper FL (UpFL) were 1 nm, 0.2 nm and 1 nm, respectively. The area of the simulated zone
was 32 nm×16 nm (In fact, 30 nm is the typical geometrical width of a DW in film with PMA(8)). The
saturation magnetizations of the two magnetic layers were both 1.0×106 A/m, and the perpendicular
anisotropy energy was 7.5×105 J/m3. The exchange stiffness in each layer was Aex=1.3×10-11 J/m. A
coupled Bloch DW configuration was created as the initial state. Then, the DW center magnetization
𝑚⃗⃗ 𝐷𝑊 was tuned by means of a locally applied external field. The angle of 𝑚⃗⃗ 𝐷𝑊 in the LwFL (UpFL)
24
Fig. S4. Estimation of the demagnetizing energy by means of a micromagnetic simulation. (A) Left: sketch of the simulated
structure. Right: one frame showing the magnetizations of the UpFL and LwFL as viewed from the z direction during the simulation.
(B) One frame showing the magnetic texture as viewed from the y direction during the simulation.
with respect to the y-axis was varied from 0 to π/2 (0 to -π/2). The total demagnetizing energy for the
simulated system, 𝐸𝑑, was saved during the simulation.
Then, the DW energy per unit area associated with the dipole-dipole interactions was calculated
as follows:
𝜎𝑑 =
𝐸𝑑−𝐸𝑑0
𝑡𝑚𝑤
(S-3)
where 𝐸𝑑0 is the demagnetizing energy of the whole simulated system when θ=π/2, which is taken as
the reference level of the demagnetizing energy; 𝑡𝑚=1.8 nm is the total magnetic layer thickness; and
w=16 nm is the width of the simulated structure, i.e., the length of the DW.
The variation in 𝜎𝑑 as a function of θ is plotted in Fig. S5, which can be fitted by 𝜎𝑑 ≈
𝐴(1 + cos 2𝜃). For this simulated configuration, the DW energy associated with the dipole-dipole
interactions decreases by more than 1.6 mJ per unit area when the DW structure changes from the
coupled Bloch configuration to the chiral vortex configuration. This is an important factor for the
formation of chiral vortices.
25
Fig. S5. Variation of the DW energy in the two FLs contributed by dipole-dipole interactions as a function of the DW
rotating angle θ, as extracted from micromagnetic simulations. The red line is the fitting results.
3.
Effect of the demagnetizing field on the stability of an intermediate state
The global demagnetizing energy of an FL is reduced if the FL is partially switched because the net
magnetization approaches zero. In other words, a demagnetizing field Bdemag helps to stabilize a DW
in an FL disc. Here, we use the concept of the effective magnetization current to evaluate the influence
of such a demagnetizing field on the DW dynamics in the FL(10 -- 12). For a uniformly magnetized film
with perpendicular anisotropy, the demagnetizing field (or stray field) is equivalent to the Oersted field
produced by a current loop around the edge of the film. The amplitude of this current is I=MStM, where
MS is the saturation magnetization and tM is the thickness of the magnet. Here, we suppose that the
magnetic state of a partially switched FL is as shown in Fig. S6A. The DW is assumed to be a straight
vertical line for simplicity of calculation, and the horizontal coordinate of the DW is xDW. The Bdemag
from the FL that is acting on the DW (at point P) is equal to the Oersted field from a current loop along
the edge of the disc with the current direction shown in Fig. S6A. For MS=1×106 A/m, we numerically
calculated the Bdemag acting on the DW as a function of the horizontal coordinate xDW, and the results
are shown in Fig. S6B. As seen from these results, the Bdemag always favors the stabilization of the DW
in the center of the disc, and its magnitude increases as the DW approaches the edge. Moreover, the
magnitude of Bdemag increases proportionally with the thickness. In our MTJ with a 1.8-nm-thick FL
and a 200-nm radius, Bdemag increases to approximately 10 mT at the edge; thus, it plays a non-
negligible role in stabilizing the intermediate state before complete switching is achieved.
26
Fig. S6. Calculation of the demagnetizing field Bdemag produced by an FL disc and acting on a DW in the disc. (A) Sketch
showing the configuration assumed for the calculation and the effective magnetization current (yellow line). (B) The demagnetizing
field acting on the DW as a function of the DW position xDW in the FL disk for different FL thicknesses tM.
4.
Movie showing the DW pinning effect induced by the chiral vortex
We have simulated the pinning effect induced by the chiral vortex formed under the
antiferromagnetic coupling of the two FLs and the opposing DMIs via OOMMF code. The simulated
area, view from the +z direction, was 40 nm×60 nm. The film consists of three layers, i.e., the
LwFL(ferromagnetic, 1 nm)\Spacer (nonferromagnetic, 0.2 nm)\UpFL(ferromagnetic, 1 nm). The two
FLs were ferromagnetically coupled because of RRKY interactions, with a coupling strength Jex=0.6
mJ/m2. However, the two FLs lost the interlayer coupling in a 8-nm wide band area in the middle of
the film. Parameters for the simulations were: MS=1×106 A/m, Ku=1×106 J/m3，Aex=1×10-11 J/m for
each FLs. DMIs with a positive (negative) sign was set in the LwFL (UpFL), D=0.5 mJ/m2.
In the beginning, a DW was set in the left of the film as the initial state. Then a 10 mT perpendicular
field was applied continuously. We observed that the DW moved to the right and then entered the area
where RKKY interactions lost. At the same time, the structure of the DW changes from Bloch type to
chiral vortex. As calculated before, the chiral vortex wall can minimize both the DMI energy and
demagnetizing energy, therefore, this structure served as an energy well and robustly pinned the DW.
No further DW motion occurred in following. The magnetic state of the film was saved during the
simulation, two frames of them can be found in Fig. S7 and the video can be found in the
Supplementary material 2.
27
A
B
Fig. S7. Two frames of video showing the DW pinning effect around the chiral vortex. (A) DW structure in area
where the UpFL and LwFL is ferromagnetically coupled. (B) DW structure after entering an area where the
coupling of the two FLs drops to zero. The video can be found in the supplementary material Ⅱ. The figure in the up
of each figure is the top view and figure in the lower is the side view.
28
References
1. z. Zhang B, et al. (2017) Influence of heavy metal materials on magnetic properties of
Pt/Co/heavy metal tri-layered structures. Appl Phys Lett 110(1). doi:10.1063/1.4973477.
2. Je S-G, et al. (2013) Asymmetric magnetic domain-wall motion by the Dzyaloshinskii-
Moriya interaction. Phys Rev B 88(21):214401.
3. Koyama T, Nakatani Y, Ieda J, Chiba D (2018) Electric field control of magnetic domain
wall motion via modulation of the Dzyaloshinskii-Moriya interaction. Sci Adv
4(12):eaav0265.
4. Vaňatka M, et al. (2015) Velocity asymmetry of Dzyaloshinskii domain walls in the creep
and flow regimes. J Phys Condens Matter 27(32):326002.
5.
Khvalkovskiy A V., et al. (2013) Matching domain-wall configuration and spin-orbit
torques for efficient domain-wall motion. Phys Rev B 87(2):2 -- 6.
6. Parkin SSP (1991) Systematic variation of the strength and oscillation period of indirect
magnetic exchange coupling through the 3 d , 4 d , and 5 d transition metals. Phys Rev
Lett 67(25):3598 -- 3601.
7. Yosida K- (1992) Ruderman-Kittel theory of oscillatory interlayer exchange coupling.
Phys Rev B 46(1).
8.
Bellec A, Rohart S, Labrune M, Miltat J, Thiaville A (2010) Domain wall structure in
magnetic bilayers with perpendicular anisotropy. Europhys Lett 91(1):17009.
9.
Vansteenkiste A, et al. (2014) The design and verification of MuMax3. AIP Adv
4(10):107133.
10. Purcell E (1963) Electricity and magnetism (McGraw-Hill book company, New York). 1rt
Ed.
11. Zhang X, et al. (2018) Direct Observation of Domain-Wall Surface Tension by Deflating
or Inflating a Magnetic Bubble. Phys Rev Appl 9(2):024032.
12. Vernier N, et al. (2014) Measurement of magnetization using domain compressibility in
CoFeB films with perpendicular anisotropy. Appl Phys Lett 104(12):122404.
29
|
1705.06658 | 2 | 1705 | 2017-07-17T10:59:08 | Band Gap Formation and Tunability in Stretchable Serpentine Interconnects | [
"physics.app-ph"
] | Serpentine interconnects are highly stretchable and frequently used in flexible electronic systems. In this work, we show that the undulating geometry of the serpentine interconnects will generate phononic band gaps to manipulate elastic wave propagation. The interesting effect of `bands-sticking-together' is observed. We further illustrate that the band structures of the serpentine interconnects can be tuned by applying pre-stretch deformation. The discovery offers a way to design stretchable and tunable phononic crystals by using metallic interconnects instead of the conventional design with soft rubbers and unfavorable damping. | physics.app-ph | physics |
Band Gap Formation and Tunability in Stretchable Serpentine
Interconnects
Pu Zhang ∗ and William J. Parnell †
School of Mathematics, University of Manchester, Oxford Road, Manchester, M13 9PL,UK
March 19, 2018
Abstract
Serpentine interconnects are highly stretchable and frequently used in flexible elec-
tronic systems.
In this work, we show that the undulating geometry of the serpentine
interconnects will generate phononic band gaps to manipulate elastic wave propagation.
The interesting effect of 'bands-sticking-together' is observed. We further illustrate that
the band structures of the serpentine interconnects can be tuned by applying pre-stretch
deformation. The discovery offers a way to design stretchable and tunable phononic crys-
tals by using metallic interconnects instead of the conventional design with soft rubbers
and unfavorable damping.
1
Introduction
Phononic crystals are periodic structures/materials exhibiting phononic band gaps that pro-
hibit wave propagation at certain ranges of frequencies [1, 2, 3]. Conventional phononic crystals
are usually composed of rigid materials like metals, plastics, and ceramics so that the band
gaps are fixed once the medium is fabricated.
In recent years, tunable phononic crystals
[4, 5, 6, 7, 8, 9] have been of great interest to researchers since the band gaps can be tuned by
applying mechanical loads or electrical/magnetic fields [10]. Currently, most tunable phononic
crystals adopt the use of compliant materials like elastomers and gels. However, a critical
problem is that these compliant materials exhibit intrinsic damping, which causes undesirable
wave dissipation so that high frequency pass bands will usually be eliminated. This has become
an obstacle to the application of tunable phononic crystals since they only work in the very
low frequency range (∼ 1 KHz) [11].
A question that arises therefore is whether it is possible to design tunable phononic crystals
by using metals in some fashion to eliminate the material damping. The metallic interconnects
in stretchable electronic systems [12, 13, 14, 15] shed some light on this question. These serpen-
tine interconnects are supremely stretchable without inducing irreversible plastic deformation
or failure due to their unique deformation feature: large rotation but small strain. Therefore,
if the periodic geometry of the serpentine interconnects can form band gaps, they would be
very useful in designing stretchable phononic crystals. The interesting work by Trainiti et al.
[16] has shown that slightly undulating beams and plates can give rise to phononic band gaps,
which implies that the serpentine interconnects may have similar behavior. Researchers have
also shown that the resonance frequencies [17, 18] and dispersion curves [19] of helical springs
can be tuned by applying axial tension/compression, implying the possible tunability of the
dynamic behavior for associated types of flexible structures. The main aims of this paper are
to explore whether band gaps can be formed by serpentine interconnects and furthermore if
these band gaps are tunable by applying a pre-stretch deformation to the stationary state.
The Kirchhoff elastica model [20] is used in order to describe the deformation of the ser-
pentine interconnects. Band structures are calculated numerically by solving the incremental
∗Email: [email protected]
†Email:[email protected]
1
dynamic equations that arise when small amplitude deformation is superimposed upon an ini-
tially pre-stretch configuration of the serpentine interconnect structure. The tunability of the
band gaps under pre-stretch deformation will be discussed. The work provides evidence of the
capability to design tunable phononic crystals from serpentine interconnects, which overcomes
the material damping obstacle of current designs that employ compliant materials such as
elastomers and gels.
2 Serpentine Interconnects under Stretch
Serpentine interconnects are usually designed as thin undulating elastica, as shown in Fig. 1.
These structures exhibit ultra-high stretchability without inducing failure or plastic deforma-
tion. As illustrated in Fig. 1, the relaxed configuration is described by parametric curves of
the form
x0(s(ξ)) = L0[ξ − β sin(4πξ)],
y0(s(ξ)) = H0 sin(2πξ),
(1)
(2)
where x0 and y0 are the horizontal and vertical coordinates of the elastica, H0 and L0 are the
initial amplitude and period of the undulating elastica, β is a parameter indicating the winding
degree, s indicates the arc length, and ξ is an independent parameter with ξ ∈ [0, 1] indicating
one period. Note that the curve degenerates to a sine function if β = 0. The relation between
the arc length s and coordinate ξ is
s(ξ) = Z ξ
0 qx2
0,ζ + y2
0,ζ dζ.
(3)
Clearly, the total arc length of one period is obtained as S = s(1) from Eq. (3). The stretch ratio
is Λ for the two types of interconnects shown in Fig. 1 so the periodic length L0 in the relaxed
configuration is stretched to ΛL0 in the deformed configuration. We adopt the inextensible
Kirchhoff elastica model to describe the deformation and equilibrium of the interconnects.
Figure 1: Schematic illustration of two forms of stretchable serpentine interconnects. The
relaxed configurations are described by Eqs. (1) and (2).
2.1 Relaxed Configuration
As shown in Fig. 2, the relaxed configuration B0 of the serpentine interconnect is described
by the centerline r0(s) = x0(s)ex + y0(s)ey such that s is the arclength of the elastica, ex and
ey are the unit bases of the Cartesian coordinate system. Since the metallic interconnects are
usually very thin, the elastica is assumed to be inextensible and shear deformation is negligible.
2
Figure 2: Schematic illustration to the relaxed and stretched configurations for the serpentine
interconnect.
The rotation of an elastica segment is described by θ0, which is defined as the angle between
the centerline and the ex direction. The kinematic relation requires that [20]
x′
0(s) = cos θ0(s),
y′
0(s) = sin θ0(s),
(4)
(5)
where f ′(s) = df /ds. The relaxed configuration (x0, y0) is prescribed initially in Eqs. (1) and
(2) and the curvature of the centerline is defined as
κ0(s) = θ′
0(s).
(6)
Since the parameter ξ is introduced in order to describe the relaxed configuration conveniently,
the curvature in Eq. (6) is further expressed as
κ0(s(ξ)) =
x0,ξy0,ξξ − y0,ξx0,ξξ
(x2
0,ξ + y2
0,ξ)3/2
.
(7)
The function κ0(s) in Eq. (7) can be solved numerically from Eqs. (3) and (7) together, which
will be used later.
2.2 Stretched Configuration
As the serpentine interconnect is stretched to a deformed configuration B in Fig. 2, the center-
line r0 will be transformed to the current position r(s) = x(s)ex +y(s)ey. Correspondingly, the
rotation angle and curvature also change to the current values as θ(s) and κ(s), respectively.
Similar to Eqs. (4) and (5), the kinematic relations obey the following form in the stretched
configuration,
x′(s) = cos θ(s),
y′(s) = sin θ(s).
(8)
(9)
The internal forces of the serpentine interconnect include stretching forces (nx, ny) and
bending moment m in the deformed configuration, as shown in Fig. 2 (b). The dynamic
equations are [21]
n′
x = ρAx,
n′
y = ρAy,
m′ = nx sin θ − ny cos θ + ρI θ,
(10)
(11)
(12)
where f = ∂f /∂t, t denotes time, A and I are the area and moment of inertia of the cross sec-
tion. Finally, the bending moment m is assumed to be proportional to the curvature increment,
so that
θ′ ≡ κ = κ0 + m/(EI),
(13)
3
where κ is the current curvature and E is the Young's modulus.
The position and internal forces of the stretched configuration can be represented by a
state vector φ = (x, y, θ, nx, ny, m). Hence, the stretched configuration can be solved by using
Eqs. (8) - (13), together with the boundary conditions φ(0) and φ(S) for one period of the
serpentine interconnect.
3
Incremental Dynamic Equation
We consider small amplitude wave propagation superimposed on a pre-stretch configuration
B, which is called small on large in some literature [22]. Hence the current configuration is a
superposition of two terms, as
φ = ¯φ + δ φ,
(14)
where ¯φ = (¯x, ¯y, ¯θ, ¯nx, ¯ny, ¯m) and φ = (x, y, θ, nx, ny, m) represent the equilibrium pre-stretch
deformation and the perturbed wave term, respectively.
The pre-stretch deformation ¯φ can be computed in the following manner. By ignoring
the inertia terms, Eqs. (8) - (13) can be cast into a series of first order ordinary differential
equations as ¯φ
′ = ψ( ¯φ). The boundary conditions are then specified as
s = 0 : ¯x = ¯y = ¯m = 0,
s = S : ¯x = ΛL0, ¯ny = ¯m = 0,
(15)
(16)
where Λ is the pre-stretch ratio of the serpentine interconnect, as depicted in Fig. 1. The
′ = ψ( ¯φ) numerically
pre-stretch deformation can then be obtained by solving the equation ¯φ
via the finite difference method. Note that for the relaxed configuration chosen in Eqs. (1) and
(2), the internal forces ¯nx = const. and ¯ny = 0.
After substituting the assumed perturbed solution (14) into the six equations Eqs. (8) -
(13), we derive the governing equations for the wave propagation problem (see Appendix A),
as
(17)
(18)
′
φ
= K φ + M
φ,
where K and M are 6-by-6 matrices with nonzero components given by
K13 = − sin ¯θ, K23 = cos ¯θ, K36 = 1/(EI),
K63 = ¯nx cos ¯θ + ¯ny sin ¯θ, K64 = sin ¯θ, K65 = − cos ¯θ,
M41 = M52 = ρA, M63 = ρI.
For the serpentine interconnects, the Bloch wave solution to Eq. (17) is
φ = Φei(ks−ωt),
where Φ = (X, Y, iΘ, iNx, iNy, M ) is a periodic complex function of s, k is the wave number,
and ω the eigenfrequency. After substituting Eq. (18) into (17) we find that
Φ′ = AΦ,
(19)
where A = K − ikI − ω2M and I is the 6-by-6 identity matrix. The transfer matrix method
[2] can be used to solve Eq. (19).
In order to implement this method, the arc length S in
one period is divided into P equal intervals [17, 18] as ∆s = S/P with P large enough (e.g.
> 200). Thereby, following the Cayley-Hamilton theorem [23], the solution of Eq. (19) for
s = p∆s (p = 1, 2, · · · , P ) is
Φ(p∆s) =
p
Yj=1
exp(Aj∆s)Φ(0) = TpΦ(0),
(20)
where Aj = [A(j∆s) + A((j − 1)∆s)]/2 and Tp = T(p∆s) called the transfer matrix. Finally,
the state vector for the end of one period s = S can be obtained from Eq. (20), as
Φ(S) = TP Φ(0).
4
(21)
Therefore, with Eq. (21), the Bloch boundary condition Φ(0) = Φ(S) finally leads to the
following eigenvalue problem
det(TP − I) = 0.
(22)
The eigenfrequency ω(k) can be solved numerically from Eq. (22) once a wave number k (0 6
k 6 π) is specified. The real eigenfrequencies ω(k) represent propagating waves while complex
eigenfrequencies indicate evanescent waves. The band structure is usually plotted for the real
eigenfrequencies. The Bloch modes can be calculated from Eq. (20) by replacing Φ(0) with
the eigenvectors of Eq. (22). Normally either the real or imaginary part of the complex Bloch
mode can be used to depict the Bloch wave modes.
4 Numerical Study
The serpentine interconnects are highly stretchable due to their undulating geometry. Wave
propagation behavior is expected to be influenced by the geometry as well as the pre-stretch
ratio. Some of the key questions to be answered include,
• Will the undulating geometry of the serpentine interconnect lead to band gap formation,
and if yes, how would the geometric parameters affect the the band gap structure?
• How will the pre-stretch deformation affect the band gaps?
• Which is the dominant factor for the band gap tunability, the undulating geometry or
internal force?
In order to address these questions, we conduct numerical simulations for the band structure to
explore band gap formation and tunability of the serpentine interconnects. Two dimensionless
variables are introduced for the wave number k and eigenfrequency ω, as
¯k = kS,
¯ω = ωSr ρA
EI
.
(23)
In addition, the rotary inertia term M63 is also ignored in Eq. (17) since its effect is negligible
for thin rods.
Figure 3: Comparison of the dispersion curves obtained from the current elastica model and
the undulated beam model [16]. The geometric parameters are chosen as H0/L0 = 0.05, β = 0
and the thickness of the beam is 0.07L0.
The current model is compared with the undulated beam model proposed in Ref.
[16]
to verify the results. Figure 3 illustrates the dispersion curves of a slightly undulated beam
(H0/L0 = 0.05, β = 0) obtained from these two models. It can be seen that these two models
5
predict almost identical results in this case.
In fact, the elastica model degenerates to the
undulated beam model when the amplitude H0 is much smaller than L0. Note that even
though the undulated beam model [16] is relatively easy to use, it is only applicable when
the beam is slightly undulated, otherwise significant error will be induced. Since serpentine
interconnects usually exhibit severely undulated geometry incorporated by the presence of the
additional winding parameter, the elastica model must be used to determine its deformation
[20, 15] and its dynamic behaviour [21].
The dispersion relations of serpentine interconnects without pre-stretch are shown in Fig.
4. We consider two types of interconnects with different winding parameter β. In addition, the
aspect ratio H0/L0 is also varied to investigate its effect on band gap formation. Fig. 4 (a)-(c)
illustrate the band structures of sinusoidal interconnects (β = 0) with aspect ratios H0/L0 =
2, 1, and 0.5, respectively.
It is observed from Fig. 4 (a)-(c) that the undulating geometry
Figure 4: Phononic band structures of serpentine interconnects in the relaxed state. The
dispersion curves are indicated by dotted curves, while the band gaps are shaded in cyan
(online) or grey (print). (a) H0/L0 = 2, β = 0, (b) H0/L0 = 1, β = 0, (c) H0/L0 = 0.5, β = 0,
(d) H0/L0 = 2, β = 0.2, (e) H0/L0 = 1, β = 0.2, (f) H0/L0 = 0.5, β = 0.2.
of the interconnects usually generates multiple band gaps, which are useful for wave filtering
and control purposes. This band gap formation mechanism is different to that in conventional
two-phase phononic crystals where non-uniform material distribution is employed [1, 2, 3].
Instead, serpentine interconnects generate band gaps from the non-uniform geometry, similar
to sinusoidal beams [16, 24] and undulated lattice structures [25, 26]. According to Fig. 4 (a)-
(c), associated with the winding parameter β = 0, an increase in the aspect ratio H0/L0 will
widen the first and second band gaps significantly. In the extreme scenario when H0/L0 = 0,
i.e. a straight elastica, there will be no band gaps. Figure 4 (d)-(e) show the band structures of
serpentine interconnects with β = 0.2 for different aspect ratios H0/L0. Interestingly, for this
winding parameter, these band structures have different characteristics as H0/L0 is increased,
compared with those in Fig. 4 (a)-(c).
In particular as is illustrated in Fig. 4 (d)-(e), the
opposite effect is noted in the first and second band gaps in that their width now decreases
as H0/L0 increases. The advantage of increasing the winding parameter β is to enhance the
stretchability of the serpentine interconnects, thinking ahead to its potential as a tunable
structure. The numerical analysis in Fig. 4 answers the first question posed at the beginning
6
of this section. The non-uniform geometry of the serpentine interconnects will induce band
gaps naturally without the need to introduce any material inhomogeneity. Additionally, the
band gaps can be modified by changing geometric parameters such as the aspect ratio H0/L0
and the winding parameter β of the serpentine interconnects.
A remarkable feature of the band structures of serpentine interconnects is the so-called
'bands-sticking-together' effect [27].
It can be observed from Fig. 4 that all of the bands
occur as pairs which merge at ¯k = π, indicating two-fold degeneracies of the Bloch modes
at the edge of the first Brillouin zone. Note in particular that the first two bands are almost
indistinguishable in Fig. 4. Therefore band gaps can only exist between two bands in neighbour
pairs, not between two bands of the same pair. This phenomenon is induced by the intrinsic
glide symmetry of the serpentine interconnects. In other words, a reflection operation with
respect to the horizontal axis followed by a horizontal translation L0/2 will not change the
structure in Fig. 1. In fact the serpentine interconnects belong to the nonsymmorphic group
F2mg in the seven Frieze groups [28]. The 'bands-sticking-together' phenomenon was also
observed for photonic crystal waveguides [28] with the same space group. The pre-stretch
deformation will not change the underlying symmetry of the serpentine interconnects in this
work.
Figure 5: Phononic band structures of pre-stretched serpentine interconnects with β = 0.
(a) Λ = 2, (b) Λ = 5, (c) Λ = 7, (d) Band gaps for different stretch ratio Λ.
In order to address the second question, we study the effect of pre-stretch deformation on
the band structure characteristics and band gap tunability of the serpentine interconnects. The
analysis shall focus on interconnects with a high aspect ratio H0/L0 = 2. Figure 5 shows the
band structures of sinusoidal serpentine interconnects (β = 0) under pre-stretch deformation.
The variation in band gap width is illustrated in Fig. 5 (d) for a wide range of stretch ratios
Λ up to approximately 7.5. Several band gap structures for specific Λ are shown in Fig. 4 (a)
and Figs. 5 (a)-(c). It is observed from Fig. 5 (d) that for this parameter set, there usually
exists three band gaps at frequencies ¯ω < 450 for most of the stretch ratios considered here.
The first band gap shrinks when Λ increases while the third band gap widens. The central
frequency of the first band gap decreases slightly then increases dramatically as Λ becomes
larger, which is induced by the separation of the first (and second) pair of bands, and is seen
by comparing Fig. 5 (a) with Fig. 5 (c). Fig. 5 (d) also indicates that the second band gap
7
disappears when Λ > 6.5, an extremely stretched situation. For instance, there is no band
gap between the second and third pairs of bands in Fig. 5(c). Instead, there exists a crossing
between the fourth and fifth bands at ¯k = 0.45π, which therefore prevents the existence of a
band gap.
Figure 6 depicts the band structures of serpentine interconnects when β = 0.2 with band
gaps shown in Fig. 6 (d) for stretch ratio Λ up to 8. Overall, the effect of pre-stretch deformation
on the band structure for this case is more complicated than that of the sinusoidal interconnects.
It can be seen from Fig. 6 (d) that the second band gap disappears when the stretch ratio
Λ = 3 (see Fig. 6 (a)) and subsequently widens, indicating complicated interactions between
the fourth and fifth bands in the band structures. Similar to Fig. 5 (d), the second band gap
in Fig. 6 (d) also disappears when the stretch ratio is large enough, due to the band crossing
effect, e.g. the crossing between the fourth and fifth bands at ¯k = 0.32π which is visible in Fig.
6 (c).
Figures 5 and 6 demonstrate that the band gaps in serpentine interconnects are highly
tunable via the application of pre-stretch deformation. Hence, it is possible to design highly
stretchable, yet tunable, phononic crystals by using such serpentine interconnects. However,
in an extreme scenario when the serpentine interconnects are stretched to straight lines, all
band gaps will disappear, although we note that this would be a rare situation in practice.
In this case, the serpentine interconnect will behave like straight beams under constant axial
tension.
Figure 6: Phononic band structures of pre-stretched serpentine interconnects with β = 0.2.
(a) Λ = 3, (b) Λ = 5, (c) Λ = 8, (d) Band gaps for different stretch ratio Λ.
For the purposes of illustration, the Bloch wave modes of the relaxed and stretched ser-
pentine interconnects are shown in Fig. 7. The Bloch mode is obtained by superimposing the
real part of the solution φ in Eq. (18) onto the pre-stretch deformation ¯φ. Note that the
time-dependent term e−iωt is omitted in Eq. (18). In Fig. 7, we pick up a special scenario with
¯k = π/2 for the first and second bands ¯ω1 and ¯ω2. The Bloch wave modes in Fig. 7 (a) and (c)
correspond to Fig. 4 (a), while the two modes in Fig. 7 (b) and (d) correspond to Fig. 5(a). It is
found that the first band ¯ω1 is a flexural mode while the second band ¯ω2 is longitudinal, which
are shown clearly in Fig. 7. The pre-stretch deformation does not significantly modify the wave
mode characteristics of the serpentine interconnects, while the eigenfrequencies will normally
8
be tuned by the pre-stretch to some extent. Higher order Bloch modes will usually exhibit
local bending deformation of the interconnects. In addition, we have found that the serpentine
interconnects with winding parameter β = 0.2 show similar Bloch mode characteristics, which
will not be discussed further in detail.
Figure 7: Bloch wave modes for relaxed ((a) and (c)) and pre-stretched ((b) and (d))
serpentine interconnects. The stationary configurations are indicated by dash-dot curves while
the Bloch wave modes are represented by solid curves. The wave number is chosen as ¯k = π/2
and the eigenfrequencies ¯ω1 and ¯ω2 indicate the first and second bands, respectively. The
geometric parameters are chosen as H0/L0 = 2 and β = 0 for all cases.
The wave dispersion relations of pre-stretched serpentine interconnects are mainly influ-
enced by two factors: the geometry change and internal forces.
It would be interesting to
quantify these two effects and identify which, if any, are dominant. This is done here by set-
ting K63 = 0 in Eq. (17) so that the effect of internal forces ¯nx and ¯ny is therefore neglected
for the subsequent band structure calculation. Fig. 8 illustrates the band structures of the
serpentine interconnects in this case, i.e. without the consideration of internal forces. Specif-
ically, Fig. 8 (a)-(d) correspond to the cases in Fig. 5 (a), 5 (c), 6 (a), 6 (c), respectively, by
considering the geometry change only. By comparing with Fig. 5 (a) and Fig. 6 (a), it is found
8 (a) and (c) that the band structures are only slightly affected by the internal
from Fig.
forces, in the scenario when the stretch ratio Λ is not large. In contrast, once the stretch ratio
Λ is large enough, e.g.
in Fig. 8 (b) and (d), the internal forces play a significant role on
the band structures with most bands shifting upward to higher frequencies. Our simulation
indicates that the band structures of serpentine interconnects are significantly affected by the
internal forces only when the stretch ratio Λ > 6. As a result, the central frequencies of band
gaps in Fig. 5 (d) and 6 (d) increase dramatically when Λ > 6. Hence, we conclude that the
geometry change is the dominant effect on band structure modification when the stretch ratio
Λ is below the intermediate level.
In the case extreme stretch however, both the geometry
change and internal forces play significant roles on the band structure. This answers the third
question raised above.
5 Conclusions
In this work, we have explored the possibility of using serpentine interconnects as stretchable
phononic materials to control elastic waves and studied the influence of pre-stretch deforma-
tion on the tunability of band gaps. The serpentine interconnects are modeled as inextensible
Kirchhoff elastica. Wave propagation is governed by incremental dynamic equations superim-
posed on a pre-stretch state. The band structures are obtained numerically for both the relaxed
9
Figure 8: Phononic band structures of pre-stretched serpentine interconnects when internal
forces are neglected. The aspect ratio is H0/L0 = 2 for all cases. (a) β = 0, Λ = 2; (b)
β = 0, Λ = 7; (c) β = 0.2, Λ = 3; (d) β = 0.2, Λ = 8.
and pre-stretched serpentine interconnects. Numerical results indicate that band structures of
serpentine interconnects exhibit the 'bands-sticking-together' effect due to the intrinsic glide
symmetry. All bands occur as pairs and degenerate at the edge of the first Brillouin zone. The
band gaps are formed between bands of neighbor pairs and tuned by their strong interactions.
In addition, the pre-stretch deformation can tune the band gaps significantly, providing oppor-
tunities for wave filtering and control. There are two main factors that affect the band gaps of
the pre-stretched serpentine interconnects: geometry change and internal forces. Our results
indicate that the geometry change is dominant when the stretch ratio is lower than 5 while
both effects play significant roles for extremely stretched scenarios.
The serpentine interconnect therefore offers a way to design stretchable and tunable phononic
media with low damping, which is the key advantage over the prevalent design of using com-
pliant materials such as elastomers and gels. Future research could be directed towards ex-
perimental studies as well as two- and three-dimensional designs of such phononic materials
employing serpentine interconnects. In addition, it would also be very interesting to explore
the effects of different geometric design [15, 13] on the band gaps and tunability of serpentine
interconnects.
Acknowledgments
The authors are grateful to the Engineering and Physical Sciences Research Council (EPSRC)
for financial support via grant no. EP/L018039/1.
A Derivation for Incremental Dynamic Equations
The derivation of the incremental dynamic equation (17) is introduced in this section. After
substituting the perturbed solution (14) into Eq. (8) and performing a Taylor expansion with
10
respect to δ, one obtains
¯x′ + δx′ = cos(¯θ + δ θ)
= cos ¯θ − sin ¯θ δ θ + O(δ2).
(A.1)
Note that ¯x′ = cos ¯θ is satisfied automatically for the pre-stretch configuration in Eq. (A.1).
Hence, the incremental dynamic equation is obtained by collecting the terms at O(δ), i.e.
x′ = − sin ¯θ θ.
(A.2)
The incremental dynamic equations corresponding to Eqs. (9)-(11) and (13) are derived simi-
larly. Finally, the substitution of (14) into (12) results in
¯m′ + δ m′ = (¯nx + δnx) sin(¯θ + δ θ) − (¯ny + δny) cos(¯θ + δ θ) + ρI(¯θ + δ
θ)
≈ (¯nx + δnx)(sin ¯θ + cos ¯θδ θ) − (¯ny + δny)(cos ¯θ − sin ¯θδ θ) + ρI(¯θ + δ
≈ ¯nx sin ¯θ − ¯ny cos ¯θ + ρI ¯θ + sin ¯θδnx − cos ¯θδny + (¯nx cos ¯θ + ¯ny sin ¯θ)δ θ + ρIδ
θ)
θ.
(A.3)
By collecting the terms of O(δ) in Eq. (A.3), we obtain the incremental dynamic equation as
m′ = sin ¯θnx − cos ¯θny + (¯nx cos ¯θ + ¯ny sin ¯θ)θ + ρI
θ.
(A.4)
Note that the inertia term ρI ¯θ = 0 for the stationary pre-stretch state. Finally, the incremental
dynamic equations can be expressed in a matrix form as shown in Eq. (17).
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12
|
1909.12956 | 3 | 1909 | 2019-12-13T07:26:41 | A fifty-fold improvement of thermal noise limited inertial sensitivity by operating at cryogenic temperatures | [
"physics.app-ph",
"physics.ins-det"
] | A vacuum compatible cryogenic accelerometer is presented which will reach $<0.5$ p$g$ Hz$^{-1/2}$ sensitivity from 1 mHz to 10 Hz with a maximum sensitivity of 10 f$g$ Hz$^{-1/2}$ around 10 Hz. This figure can be translated to a displacement sensitivity $<2$ fm Hz$^{-1/2}$ between 2 - 100~Hz. This will supersede the best obtained sensitivity of any motion sensor by more than three orders of magnitude at 1~Hz. The improvement is of interest to the fields of gravitational wave instrumentation, geophysics, accelerator physics and gravitation. In current particle accelerators and proposed future gravitational wave detectors $<$10 K cryogenics are applied to the test masses in order to reduce thermal noise. This concept can benefit from the already present superconducting regime temperatures and reach a $>10^5$ signal-to-noise ratio of all terrestrial seismic spectra. The sensor may be used for control of beam-focusing cryogenic electromagnets in particle accelerators, cryogenic inertial sensing for future gravitational wave detectors and other fields. | physics.app-ph | physics | †[email protected]
A fifty-fold improvement of thermal noise limited inertial sensitivity by operating at
cryogenic temperatures
J.V. van Heijningen†,1, 2
1ARC Centre of Excellence for Gravitational Wave Discovery OzGrav
2The University of Western Australia, 35 Stirling Hwy, Crawley WA 6009, Australia
(Dated: 16th December, 2019)
A vacuum compatible cryogenic accelerometer is presented which will reach < 0.5 pg Hz−1/2 sensi-
tivity from 1 mHz to 10 Hz with a maximum sensitivity of 10 fg Hz−1/2 around 10 Hz. This figure can
be translated to a displacement sensitivity < 2 fm Hz−1/2 between 2 - 100 Hz. This will supersede
the best obtained sensitivity of any motion sensor by more than three orders of magnitude at 1 Hz.
The improvement is of interest to the fields of gravitational wave instrumentation, geophysics, ac-
celerator physics and gravitation. In current particle accelerators and proposed future gravitational
wave detectors < 10 K cryogenics are applied to the test masses in order to reduce thermal noise.
This concept can benefit from the already present superconducting regime temperatures and reach
a > 105 signal-to-noise ratio of all terrestrial seismic spectra. The sensor may be used for control of
beam-focusing cryogenic electromagnets in particle accelerators, cryogenic inertial sensing for future
gravitational wave detectors and other fields.
Introduction
Since 1962, gravitational wave scientists have been pur-
suing an interferometric approach to probe space-time
curvature ripples [1]. With first the detection of gravita-
tional waves (GWs) [2], the most precise distance mea-
surement ever was made. The first coincidental mea-
surement of GWs with electromagnetic counterparts,
GW170817, from a binary neutron star merger [3, 4] has
provided a firm basis for the newly founded field of multi-
messenger gravitational wave astronomy and an indepen-
dent confirmation the gravitational wave detector mea-
surements. In future, low frequency GW detections will
give access to heavy mass black hole insprial signals.
All these monumental measurements would not have
been possible without decoupling the test masses of the
detectors from the Earth's ever-present motion. The
seismic wall, after the appropriate vibration isolation,
is typically limiting below 10 Hz. Many of the world's
most precise commercial sensors were used in LIGO [5]
and Virgo [6] and continue to be used in Advanced LIGO
(aLIGO) [7], Advanced Virgo [8] and KAGRA [9]. Some
custom made sensors were also researched and developed,
such as the LVDT [10] or the OSEM [11] for differential
sensing. For the angular degree of freedom, the Beam
Rotation Sensor (BRS) [12] and A Low Frequency Rota-
tional Accelerometer (ALFRA) [13] have been developed.
Currently the Precision Laser Inclinometer (PLI) [14] is
being installed in Advanced Virgo.
The inertial sensors used in the field of GW instrumen-
tation are mostly commercial, e.g. the Sercel L4C [15] or
the Geotech GS13 [16], but some custom built accelerom-
eters have been developed for use in the Virgo superatten-
uator [17]. In Fig. 1 the commonly used inertial sensors
are compared. Note that low frequency performance is ig-
noring any angular-to-horizontal coupling. In practice, a
matching tiltmeter with sufficient sensitivity to measure
angular motion to correct for this inevitable coupling is
needed.
Many sensor performances displayed in Fig. 1 can be
used to measure almost all locations on Earth with rea-
sonable signal-to-noise ratio (SNR) as the sensitivy is be-
low the Peterson Low Noise Model. Some are sufficiently
sensitive at high frequency to actively damp an inertial
platform as used in aLIGO suspensions. Outside gravita-
tional wave physics, geophysics, accelerator physics and
gravitation can benefit from even better performance.
FIG. 1: Measured or specified displacement sensitivity for
inertial sensors used in geophysical and gravitational wave
experiments. The Peterson high and low noise models
(HNM/LNM) data are from ref. [24]
A superconducting gravimeter has been presented and
used in the past [18], where a Superconducting QUantum
9
1
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2
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3
1
]
h
p
-
p
p
a
.
s
c
i
s
y
h
p
[
3
v
6
5
9
2
1
.
9
0
9
1
:
v
i
X
r
a
10-210-110010110210-1410-1310-1210-1110-1010-910-810-710-610-5Peterson HNMPeterson HNMSercel L4CLIGO/GeoTech GS13Nanometrics T240Strekheisen STS-2Virgo ACC, LVDT R.O.AEI ACC, LVDT R.O. Interference Device (SQUID) was used for its readout.
Acceleration sensitivities of about 10−10 m s−2 Hz−1/2
were demonstrated. Additionally, Microelectromechan-
ical system (MEMS) accelerometers have entered the
stage for gravimeters [33] and accelerometers [34]. Both
options reach ng Hz−1/2 sensitivities; the former even
reaches down to 10−6 Hz.
Recently, an interferometric readout [21] has been com-
bined with a monolithic accelerometer [22] at Nikhef.
A prototype was made and measurements were per-
formed [23, 30]. Bench motion of 8·10−15 m Hz−1/2 from
30 Hz onward was measured limited by the sensor self-
noise. Continued development to reach the modelled sen-
sor self-noise of 3· 10−15 m Hz−1/2 from 10 Hz is ongoing.
Here, a concept for a sensor is presented that will en-
hance inertial sensitivity by at least two orders of mag-
nitude between 10 mHz - 100 Hz compared to the state
of the art. It uses the superconducting characteristic of
the proposed mechanics material Niobium to decimate
the effect of Eddy current damping in the coil magnet
actuator. Section I will discuss the proposed design.The
effect the superconductive state has on the accelerome-
ter mechanics on Eddy current damping is discussed in
section II, which will result in an modelled noise bud-
get in section III. Possible applications are discussed in
section IV after which a conclusion is provided.
2
FIG. 2: Niobium monolithic accelerometer with interferomet-
ric optical readout. The position of the proof mass is probed
by an interferometer with a differential readout. A piezo actu-
ated mirror is used for calibration outside regular operation.
The difference between the two interferometer output signals
is kept null by a feedback loop. The feedback loop uses a thin
film deposited Niobium spiral as an actuator.
It keeps the
mass at a fixed position with respect to the frame and the
signal it needs to do that can be used as sensor output. This
design is a combination of accelerometer mechanics [32] and
an interferometeric readout [21].
One of London's equations is a result of manipulating
Ampere's law and governs the (highly reduced) penetra-
tion depth of the magnetic field in a superconducting
material as [35]
(cid:114) m
I. PROPOSED DESIGN AND MATERIAL
CHOICE
∇2B =
1
λ2 B, with λ ≡
µ0nple2 .
(1)
The low frequency part of the Ref. [30] noise budget
and possibly also the measurement is obscured by sus-
pension thermal noise. A disappointing quality factor of
40 was determined for the mechanics of the accelerom-
eter [31]. Shot noise was the dominant noise force from
about 10 Hz in the designed noise budget. The design is
shown in figure 2.
An interferometric readout with a voice coil actuator to
keep the proof mass mirror position in the linear regime
of the interferometer fringe can prove a superior sens-
ing solution with a relatively high dynamic range. The
dynamic range is set by the quality of the readout and
control electronics and can be as high as eight orders of
magnitude.
II. CHANGES TO SUPERCONDUCTIVE
MECHANICS AND ACTUATORS
A switch to a material that becomes superconducting
at cryogenic temperatures could decrease the effect of
Eddy current damping. Niobium seems to be the most
logical choice as it has a transition temperature at 9.2 K,
high strength and high intrinsic quality factor. Niobium
has been used for bar detectors [19] and suspensions for
gravitational wave detectors [20] mostly because of these
favourable characteristics.
Here, B denotes the magnetic field within the supercon-
ductor, λ the London penetration depth, m the mass
of the charge carrier, µ0 the magnetic permeability in
vacuum, npl the planar density and e the charge of the
carrier.
Niobium has a BCC lattice, therefore npl = 5· 1018cm2
and, using electron characteristics for the charge carrier,
λ is determined to be about 3 µm. This means that the
magnetic field decays exponentially to a negligible value
within 20 micron and, since currents are practically loss-
less in a superconductor, Eddy current damping is there-
fore assumed not to be dominant over structural damping
in the following discussion.
The Q of the Niobium mechanics may be assumed to
be about 104 in the cold state [25]. The actuator will
be conceived as a thin film superconducting coil, similar
to the designs used for cryogenic bar detector readout
schemes. Thin film deposited Niobium spiral actuators
are used. [26]. The actuator design will not affect the
overall mechanical Q as its (reduced) effect is summa-
rized by stating this electromechanically coupled damp-
ing channel has a Q > 105 [25]. Both these considera-
tions validate the assumption made below on the Q and
its subsequent fifty-fold reduction of the thermal noise.
The use of the spiral actuator that will generate a mag-
netic field pressure on the extrusion shown in Fig 2 as
that volume will portray the Meissner effect. The push
only actuator will act as a spring which could possibly
spoil the sensor performance by injecting frame motion
in the inertial mass. The magnetic pressure is given by
pmgn = B/(2µ0), where B is the magnetic field strength
at the extrusion surface. Assuming an area of 1 cm2 of
the spiral actuator, the actuator force is
FB = 5 · 10−5 B2
µ0
≈ 40B2.
(2)
The standing force, as it will generate a magnetic field
that is uniform on a small scale, will not result in an
actuator noise. The application of the Biot-Savart law
on the center-line of a current loop involves integrating
the z-component, where z is the axis normal to the loop.
As an example design, the actuator is modelled as 10
loops in a 1 cm2 area with radius R between 0.05 cm≤
R ≤ 0.5 cm, and this yields
Bz
I
=
µ0
4π
2πR2
(z2 + R2)3/2
≈ 1.8 · 10−3 T/A,
(3)
where I is the supplied current to the actuator. Sub-
stituting this result in Eq. 2 and considering a typical
actuator current of 10 mA yields a force associated with
the supplied B field of FB =12.96 nN when assuming a
0.1 mm actuator gap. The Peterson high noise model
peaks around 1.5 µg/Hz−1/2, which would require 1 A
current supply to the modelled actuator design. Depend-
ing on the application the acceleration needed to keep the
interfereometric readout in the linear part of the fringe,
the same actuator design may not need such amount of
current.
Assuming the proof mass moves with an amplitude
of 1 micron during usual operation, the stiffness of this
spring (assuming a roughly constant F when supplying
the said 10 mA) is about kact = 0.013 N/m. The spring
constant of a Watt's linkage with a 1 kg proof mass tuned
to 0.4 Hz is about kmech = 6.31 N/m which is almost a
factor of 500 higher than kact. The actuator's impact on
the overall stiffness is therefore negligible.
Further reduction of kact is possible by
• a more homogeneous magnetic actuator, e.g. using
thin film Niobium loops deposited on silicon wafers
stacked to make a coil. Niobium wires are not cho-
sen here as historic practical measurement [27] of
surface loss of the fabricated wire surfaces are too
high - thin films can be produced with much less
surface loss. Removing the centre of these loops al-
lows for flag insertion allowing probing of the most
homogeneous part of the B field;
• applying a wedge to the extrusion and tuning the
suspension points of the Watt's linkage such that
horizontal motion couples to vertical motion [28].
This way, the average gap between actuator spiral
and extrusion surface is such that the overall stiff-
ness can be arbitrary low.
3
All above considerations prove the superconducting spi-
ral actuator, even without much changes from earlier de-
sign principles, is viable for its purpose. The calculated
FB also suggests that typical stray AC magnetic fields
are not worrisome as a potential noise source.
The Earth's typical magnetic field has a magnitude
around 50 µT and has varied from 56 to 52.5 µT from
1970 to 2012 [29]. The variations on the 1 mHz scale are
many orders of magnitude smaller. Therefore, the Earth
magnetic field can be omitted from stray field issue anal-
ysis. Careful design of surrounding magnetic sourcing
machinery or actuators must be observed not to spoil
the sensor performance.
In any physics experiment, stray magnetic fields gener-
ated by some device could interfere with the operation of
another device. For this accelerometer this interference
can occur in two distinct ways. First, the magnetic field
can couple to the proof mass and introduce a accelera-
tion noise in a mechanical sense. This could be mitigated
by use of a solid box of superconducting material around
the full accelerometer. The Meissner effect of that box
will act as a Faraday's cage for magnetic fields. Lead is
easily machined and weldable and has appropriate super-
conducting characteristics and can be used for this.
Second, the PDs and subsequent readout electronics
might be affected by strong magnetic fields. To solve
this, already research towards fully separating the opti-
cal readout and its conversion to electronic signals. More
results are found in ref. [? ], but the effort can be sum-
marised by stating a pm Hz−1/2 sensitivity was obtained
using optical fiber. An in-fiber scheme using fiber split-
ters, circulators and fiber PDs was used to show proof-
of-principle for the room temperature sensor in context
of its deployment in the proposed CLiC linear collider
at CERN. Linearity in the in-house made piezo fiber
stretcher actuators was shown and a solid comparison
to a Sercel L4C geophone was presented.
III. NOISE BUDGET OF READOUT AND
MECHANICS
In table I, parameters similar to those used in Ref. [30]
are presented. A higher quality factor and lower temper-
ature sharply reduce the thermal noise contribution to
the noise budget, which is shown in figure 3.
In this particular configuration, the accelerometer me-
chanical quality factor was found to be limited by vis-
cous damping associated with eddy currents induced on
the closely spaced moving metal surfaces by the VC stray
field. Here, the aim is to be structurally damped, which
will cause a thermal Brownian noise of [37]
x2
th =
(k − mω2
4kBT kφ
0)2 + k2ω2
1
ω
(4)
where kB denotes the Boltzmann constant, T the temper-
ature and φ = 1/Q(ω) the structural loss angle. With
ω the angular frequency of the input vibration and k
4
For solid state lasers the Relative intensity noise (RIN)
spectrum can be roughly expressed as
iRIN = isn
+ 1,
(6)
(cid:114) ωc
ω
where ωc represents the corner frequency above which
the light source intensity fluctuations converge to shot
noise limit. Thanks to the differential configuration of the
interferometer ωc can be pushed to low frequency. The
effective value of ωc can be determined experimentally.
In ref. [31] the used differential amplifier is able to get ωc
down to about 5 Hz.
Laser frequency noise can also impact the total noise
Hz) translates
√
budget since a frequency noise νL (in Hz/
into a readout displacement noise
xf =
νL
ν0
∆L0,
(7)
where νL represents the frequency noise quoted by the
laser manufacturer, ν0 = c/λ the central frequency and
∆L0 the static arm length difference.
Depending on the quality of the control and readout
electronics, the dynamic range can, at time of writing, be
extended by approximately 8 orders of magnitude. This
is important to obtain fm Hz−1/2 sensitivity at high fre-
quency and still have almost a µm range to cope with
residual motions of the stage on which the sensor is
mounted. Low frequency dynamic range may be impeded
somewhat by the effective dynamic range of electronics
being reduced because of e.g. flicker noise.
IV. POSSIBLE APPLICATIONS
As some future gravitational wave detectors designs
involve cryogenics, these sensors could be installed and
used as monitoring or an error signal generating channel
depending on the furture suspension designs. As the test
mass is already in a cryogenic environment, the cryogenic
infrastructure needed for this sensor to operate would
already be there and the small mass would not contribute
significantly to the heat load. Having sub-femtometer
sensing from 5 Hz onward at that suspension stage is of
the utmost importance to reach future GW detector low
frequency goals.
It could also operate as a standalone sensor as it can
detect all seismic conditions on Earth with a SNR of
> 105 between 10 mHz - 100 Hz. It would require a cryo-
stat which would make it more challenging. Additionally,
any application on a future particle collider such as the
International Linear Collider (ILC) [39] or Future Circu-
lar Collider (FCC) [40] could be interesting as cryogenics
are frequently used for superconducting electromagnets.
The electronics of the readout can then be moved else-
where by use of fibers as already presented and proven
in the appendix of ref. [31].
The analysis in previous sections focuses on adaptation
of the design similar to the O(1) kg proof mass published
(a)
(b)
FIG. 3: Minimum detectable inertial (a) displacement and
(b) acceleration for a structurally damped accelerometer with
interferometric readout as in Fig. 2.
In this noise budget
the suspension natural frequency of the accelerometer was
assumed to be 0.4 Hz. The Peterson noise models are not
visible as they lie above the vertical scale.
the stiffness of the oscillator under study, ω0 denotes
the natural frequency of the suspension. It can be seen
that the displacement amplitude spectral density (ASD)
xth ∝ ω−2.5 above the resonance frequency.
Below, calculation methods for several noise sources
are summarized from ref. [30]. The shot noise limit can
be calculated to be
(cid:112)
2eIPD =(cid:112)2eρPPD,
isn =
(5)
where e denotes the elementary charge and ρ the respon-
sivity in A/W of the photodiode.
10-210-110010110210-1610-1510-1410-1310-1210-11Suspension thermal noiseFrequency NoiseRINShot noiseDark currentResistor thermalOp-amp voltageOp-amp currentTotal10-310-210-110010110-1610-1510-1410-1310-1210-1110-10Suspension thermal noiseFrequency NoiseRINShot noiseDark currentResistor thermalOp-amp voltageOp-amp currentTotal Parameter
Value
Unit
5
Proof mass
Leg mass
Leg length
Natural frequency
Quality factor
Frequency noise [38]
Static differential arm length
Injected power
Wavelength
Temperature
Opamp voltage noise @ 100 Hz
Opamp voltage noise @ 0.1 Hz
Opamp current noise @ 100 Hz
Feedback resistor
Diode responsivity
Diode dark current
Actuator gap
0.85
80
7.1
0.4
1·104
kg
g
cm
Hz
-
500 · f−1/2 Hz Hz−1/2
0.5
50
1550
< 9.2
4.0
50
2.2
20
1.0
50
0.1
mm
mW
nm
K
nV Hz−1/2
nV Hz−1/2
fA Hz−1/2
kΩ
A/W
nA
mm
TABLE I: Optomechanical and readout electronics param-
eters for the prototype accelerometer. The modeled laser
source is The RockTM from NP Photonics, the opamp used
in the transimpendance amplifier is the OPA827 and the pho-
todiodes have a typical responsivity and dark current. Some
quoted electronical noise figures are at room temperature and
might improve.
earlier [30]. Obviously, the proof mass does not have
to be order 1 kg.
In Fig. 4 the effect of changing this
proof mass value is presented. The stiffness of the sus-
pension is held constant and a conservative constant Q
is adopted. Note that similar sensitivity as the room-
temperature 1 kg versions is obtained by the 10 g cryo-
genic version. This shows possible scaling of the sensor
and the sensitivity of two other examples.
V. CONCLUSION
A novel cryogenic accelerometer that promises to reach
a broadband sub-femtometer sensitivity from several
hundred mHz to several hundred Hz is presented. The
noise budget shows fm Hz−1/2 sensitivity levels are pos-
sible from about 5 Hz onwards. This corresponds to a
< 500 fg Hz−1/2 acceleration sensitivity from 1 mHz -
10 Hz with a maximum sensitivity of 10 fg Hz−1/2 around
1 Hz.
To increase dynamic range, the sensor is designed to in-
clude a feedback loop, which uses a coil magnet actuator.
In prior work, this actuator decreased the Q factor which
was limiting suspension thermal noise. Now, by operat-
ing at cryogenic temperatures and using superconducting
material, this Eddy current damping effect is eliminated.
Currently, a proposed change of design of the actuator is
being investigated at Nikhef. The design aims to decrease
Eddy current damping by switching coil and magnet to
(a)
(b)
FIG. 4: Minimum detectable inertial (a) displacement and
(b) acceleration (note a difference frequency range plotted
than Fig 3(b)) for a structurally damped accelerometer for
different proof mass values. The stiffness of the oscillator is
kept constant and thus the resonance frequency goes up with
(cid:112)1/m. The Q is kept constant at a now conservative value
of 104. Legend colours of Fig. 3 is used.
have the magnet attached to moving parts [41]. This re-
sults in Q factors up to 6000 [42] at the expense of using
kΩ series resistors with the coil. This would mean high
voltage operation, which for GW suspension application
would be challenging.
This order of magnitude improvement over earlier
room temperature and non-superconducting versions of
this sensor design brings about even more ability to also
monitor the final stages of a GW detector. Addition-
ally, this work will benefit precision measurements in geo-
physics and gravimetry as well as the use as error signal
generation for vibration isolation control in particle ac-
celerators.
Acknowledgments
The author would like to thank F. Van Kann for shar-
ing his experience regarding Niobium spiral transducers
used here as actuators. Additionally, A. Bertolini, N.
de Gaay Fortman, G. Hammond, C. Blair, D.G. Blair, J.
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7
|
1705.03610 | 1 | 1705 | 2017-05-10T05:49:20 | Nanodiamond arrays on glass for quantification and fluorescence characterisation | [
"physics.app-ph"
] | Quantifying the variation in emission properties of fluorescent nanodiamonds is important for developing their wide-ranging applicability. Directed self-assembly techniques show promise for positioning nanodiamonds precisely enabling such quantification. Here we show an approach for depositing nanodiamonds in pre-determined arrays which are used to gather statistical information about fluorescent lifetimes. The arrays were created via a layer of photoresist patterned with grids of apertures using electron beam lithography and then drop-cast with nanodiamonds. Electron microscopy revealed a 90% average deposition yield across 3,376 populated array sites, with an average of 20 nanodiamonds per site. Confocal microscopy, optimised for nitrogen vacancy fluorescence collection, revealed a broad distribution of fluorescent lifetimes in agreement with literature. This method for statistically quantifying fluorescent nanoparticles provides a step towards fabrication of hybrid photonic devices for applications from quantum cryptography to sensing. | physics.app-ph | physics |
Nanodiamond arrays on glass for quantification and
fluorescence characterisation
Ashleigh H. Heffernan1,*, Andrew D. Greentree1, and Brant C. Gibson1
1ARC Centre of Excellence for Nanoscale BioPhotonics, School of Science, RMIT University, Melbourne, 3001,
Australia
*[email protected]
ABSTRACT
Quantifying the variation in emission properties of fluorescent nanodiamonds is important for developing their wide-ranging
applicability. Directed self-assembly techniques show promise for positioning nanodiamonds precisely enabling such quantifica-
tion. Here we show an approach for depositing nanodiamonds in pre-determined arrays which are used to gather statistical
information about fluorescent lifetimes. The arrays were created via a layer of photoresist patterned with grids of apertures using
electron beam lithography and then drop-cast with nanodiamonds. Electron microscopy revealed a 90% average deposition
yield across 3,376 populated array sites, with an average of 20 nanodiamonds per site. Confocal microscopy, optimised for
nitrogen vacancy fluorescence collection, revealed a broad distribution of fluorescent lifetimes in agreement with literature. This
method for statistically quantifying fluorescent nanoparticles provides a step towards fabrication of hybrid photonic devices for
applications from quantum cryptography to sensing.
Introduction
Diamond has long been studied for its remarkable properties including chemical inertness, biocompatibility, transparency
from the ultraviolet to the infra-red range, high thermal conductivity and mechanical strength1–4. Recently, a large amount of
research has focused on investigating the optical properties of fluorescent defects, often referred to as colour centres1. Detection
of individual colour centres by confocal microscopy was demonstrated 20 years ago5, and over 500 active optical centres have
so far been characterised6, many of which show single photon emission characteristics7.
One colour centre in particular has received the most attention:
the nitrogen-vacancy (NV) centre, consisting of a
substitutional nitrogen with a vacancy in its nearest neighbour lattice site8. The valence electrons of the nitrogen atom give rise
to two possible charge configurations of this centre: neutral NV0, or negatively charged NV-. The emission spectrum of the
NV- centre is centred around 700 nm and its standard fluorescent lifetime in bulk diamond is ∼12 ns; both of these aspects
make it attractive for biological imaging because autofluorescence from surrounding media can be avoided with spectral filters
and/or time-gating9, 10. Other aspects of the NV centre, including its long-lived and controllable spin state, make it attractive
for quantum information purposes11. The NV centre has also been presented as a sensor, with changes in the environment
(e.g. temperature12, magnetic field13, or nearby nuclear spins14) giving rise to variations in fluorescence, which is the basis of
optically detected magnetic resonance (ODMR) measurements.
The excited state lifetime of the NV centre in diamond varies depending on several factors. The number of impurities in the
diamond lattice, presence of non-diamond carbon material, size of the host crystal lattice (e.g. bulk single crystal diamond or
nanodiamond), surface modification, and irradiation have all been reported to contribute to lifetime values ranging from 11.2 ns
in the bulk to 25 ns15–22.
Integrating nanodiamonds with mature photonic devices is essential to using their properties in a range of applications
from quantum cryptography to sensing. Here we present a method for positioning as-received ball-milled nanodiamonds in
pre-determined locations on glass, and use it as a tool for measuring the fluorescent lifetime statistics of the deposited material.
A number of approaches to locate NV centres in diamond have been developed over the last several years which fall into
two broad categories: top-down direct-write techniques, and bottom-up assembly techniques.
Top-down approaches involve the creation of colour centres directly in bulk diamond using high-energy ion, neutron, or
electron irradiation followed by annealing23–25. Implanting colour centres with nanoscale precision is a challenge, which can
be overcome by using a lithographic mask26, 27 or a direct-write focussed beam21, 28. Vertical distribution in the substrate is
another challenge for direct writing techniques29–31, especially since the depth of the colour centre below the surface has an
impact on the fluorescence and to sense things near the surface the the colour centres have to be proximal to the surface.
Some bottom-up techniques involve nanodiamond particles, using them either as-received from the manufacturer or
optically activating them by irradiating the nanodiamond powder before positioning32. The nanodiamonds can be deposited by
spin-coating a solution on a substrate (leading to single particles dispersed randomly), pre-characterised, then positioned by
microscopic probe (colloquially known as 'pick and place')33, 34; however, this method is time-consuming and not suited to
large-scale production.
An alternative to deterministic nanoparticle positioning is to use techniques of directed self-assembly. They can be more
efficient, have high spatial control of potential locations, and are often compatible with parallel fabrication methods35–39.
To optimise the particle surface properties for self-assembly, nanodiamonds often need significant chemical and physical
processing. When suspended in solution, nanodiamonds acquire a zeta potential (∼-30 mV as-received39), which leads to
readily formed agglomerates: to counteract this, the material can be treated with liquid phase purification or high temperature
annealing3, 40. Additional processes can be performed to enhance the fabrication, for example reactive ion etching has been used
to attach a linker molecule before self-assembly41. The method presented here keeps nanodiamond processing to a minimum,
does not require any additional steps to process the substrate, and is a low-temperature fabrication method which is compatible
with complementary metal-oxide-semiconductor (CMOS) processes.
Directed self-assembly suffers from the fact that pre-selected nanodiamonds cannot be placed at a given location, and
the attachment specificity isn't always perfect. The practical harnessing of directed self-assembly therefore requires using
defect-tolerant design considerations. If a device requires a certain number of elements to work, it may be more efficient to
overcompensate during fabrication and have many defective elements than it is to laboriously fabricate every element perfectly
and achieve 100 percent yield. In this context, self-assembly of nanodiamonds could lead to the creation of a large-scale
many-qubit device42. Arrays such as the ones presented here are the first steps towards robust hybrid device fabrication
on optically transparent substrates for quantum information processing, and towards novel large-area ODMR sensing and
biological imaging.
Methods
Array Fabrication
A 3 inch [100] Si wafer was cleaned in an ultrasonic bath of acetone, then ethanol, then isopropyl alcohol (IPA), for 1 minute
each. A 100 nm layer of polymethyl methacrylate (PMMA) A2 950 K was spin coated at 4000 rpm for 30 seconds, followed by
a soft bake on a hot plate at 200◦C for 2 minutes. The wafer was then diced into ∼20 mm square samples.
We used Si substrates to optimise the exposure process, and ultimately translated the technique to a transparent substrate: a
glass slide (ProSciTech G300 white glass) was diced into ∼20 mm squares, and cleaned and spin coated in a similar method to
the Si.
For the electron beam lithography (EBL) exposure process, an FEI Nova NanoSEM equipped with the Nabity Pattern
Generation System software was used. The current of the 30kV electron beam was measured with a Faraday Cup; in high-
vacuum mode (1× 10−6 Torr for the silicon substrates) the current was measured to be 300 pA. The dwell time of the electron
beam at each point was calculated by the NPGS software (using the measured value of the current). To mitigate the issue of
electrical charge gathering on the surface of the glass slide samples, we used a low-vacuum mode in the SEM which introduces
water vapour into the vacuum chamber (known as Variable Pressure Electron Beam Lithography, VP-EBL43), at a pressure of 5
Torr and a measured beam current of 101 pA.
The pattern was designed to take into account the diffraction-limited resolution of confocal microscopy which was to be
utilised post fabrication: to be confocally resolvable, the array sites needed to be at least 300 nm apart. We designed apertures
ranging from 50 nm to 1 µm in diameter, in arrays with pitches ranging from 1.5 µm to 10 µm, and repeated the arrays over
areas up to 15 mm2.
The exposed patterns were developed in a 1:3 MIBK:IPA bath for 1 minute, then rinsed with IPA followed by water, and
dried with pressurised air. To characterise the developed apertures without exposing the remaining photoresist, an atomic force
microscope was used.
As-received nanodiamonds with a nominal diameter of 45 nm (Nabond Technologies, China) were suspended in Milli-Q
water at a concentration of 1 µg/mL and sonicated for 10 minutes to break up the larger agglomerations. The zeta potential
and average size of the remaining aggregates was measured with a Malvern Zetasizer, found to be -40 mV and and 124 nm
respectively. The solution was drop cast on the developed photoresist and allowed to air dry overnight.
An acetone lift-off step was performed to strip the PMMA and top layer of nanodiamond material away, leaving behind
nanodiamonds that had come into contact with the apertures. To remove remaining organic material (solvent or photoresist),
the samples were placed in a plasma cleaner (Gatan Model 950, 65 W 13.56 MHz power supply) and subject to 2 minutes of
H2/O2 plasma. Characterisation of the topography of the arrays was performed with an FEI Verios SEM, under low accelerating
voltage and high stage bias without conductive coating.
2/10
Confocal Microscopy
A custom confocal microscope44 was used to characterise the NV- fluorescence of the nanodiamond arrays at room temperature.
A 532 nm continuous wave laser (LaserQuantum GEM 532) was used to excite the sample with 0.5 mW of excitation power.
The beam was passed through a 532 nm line filter to filter out fluorescence from a single-mode fibre. A 561 nm dichroic mirror
reflected the beam onto the back of a 100x objective with NA = 0.9. The same objective collected the fluorescence, which was
passed through a 532 nm notch filter to filter out the reflected laser light. A 697 ± 75 nm band pass filter was used to block
background light and transmit a region that would show the zero phonon lines and phonon sideband of the NV centre emission
spectrum. The collected signal was split 90:10, with 10% going to a spectrometer (Princeton Instruments SpectraPro 2500i
with PIXIS 100BR camera) to confirm that the emission spectrum matched that of the NV centre, and the remaining 90% being
split 50:50 between two avalanche photodiode detectors.
For fluorescent lifetime measurements, a Fianium supercontinuum source was used, set to deliver 0.1 mW of 520 ± 10
nm light at a pulse rate of 20 MHz (corresponding to a repetition rate of 50 ns). The excitation and emission light was passed
through the same filters as for the continuous wave excitation. The time-resolved direct fluorescence decay traces were obtained
by a correlator card (Picoquant, TimeHarp 260).
We also excited the same sites with a 633 nm HeNe CW laser, and collected emission through a 633 nm notch filter and a
633 nm long pass filter, to look for silicon vacancy (SiV) centre emission in the as-received nanodiamond material.
Results and Discussion
The fabrication of nanodiamond arrays using EBL has been published elsewhere, with a subsequent diamond film growth step39.
In this study, we used the same array fabrication method, but we present quantification of the deposition of nanodiamonds on a
glass substrate, and we present fluorescent characterisation of the nanodiamond arrays without any other material processing.
Deformation of EBL patterns can be caused by electrical charge gathering on insulating substrates and deflecting the
electron beam, however we found that the overall array pattern was not deformed, even on the glass substrate. We attribute
the lack of deformation of our arrays to the use of VP-EBL and the simplicity of the overall pattern, each of which minimises
the impact of charging. Charging can also be reduced by minimising the area of each aperture, but this requires a precisely
focused electron beam. 200 nm circular apertures were written with the VP-EBL using a raster pattern for the exposure. The
focus and alignment of the electron beam are critical requirements for accurate EBL, but attaining high precision of these in
VP-EBL is challenging. The water vapour molecules that were introduced into the vacuum chamber to minimise charging can
cause scattering in the electron beam and decrease the signal-to-noise ratio of the SEM image. Since the clarity of the image is
essential to fine tuning the focus of the beam, a noisy image means a precisely focused beam is difficult to achieve.
The deposition process left nanodiamond residue on the PMMA layer in typical coffee-ring patterns as the water evaporated
and the droplet shrank. After stripping the photoresist, arrays of nanodiamond material were visible by optical microscope, as
were some areas of non-specific deposition, as shown in Figure 1.
Two theories are proposed based on previous literature39 as to why the nanodiamonds remain at the aperture locations
during the photoresist removal step. The negative zeta potential of the particles in solution may be responsible for a van der
Waal attraction to the positively charged native silicon oxide layer on the wafer. Alternatively, the surface chemistry of the
nanodiamonds (e.g. carboxylic groups) may result in covalent bonding with straggling polymer chains at the edges of the
developed apertures in the photoresist. We often saw nanodiamonds in a circular pattern at each site, which may be evidence of
the latter hypothesis; however this does not explain non-specific deposition, where nanodiamonds are attached to the substrate
in places other than those pre-determined by EBL.
To quantify the yield of deposited nanodiamond material, six individual arrays were imaged by SEM (Figure 1) and the
number of populated sites, displayed in Table 1 for each selected array, was deduced by visually counting the number of
unpopulated sites. One of the arrays quantified showed 98% yield (613 out of 623 sites populated with nanodiamond material),
and the average total yield was 90% over the 6 arrays considered. However, Figure 1 shows some variability and the extent of
non-specific deposition.
Nanodiamonds at individual sites were quantified from SEM micrographs for a selection of sites in arrays (h) and (i) shown
in Figure 1. Close up SEM micrographs of several sites from array (h) are shown in Figure 2, displaying distributions of number
and size of nanodiamonds per site.
Confocal microscopy was performed after developing and before drop-casting the nanodiamond material, and again after
the photoresist was removed. The developed PMMA showed no outstanding fluorescence above background levels (∼ 5000
counts per second).
Figure 2 shows an SEM micrograph and a fluorescent map of a region of array (h) shown in Figure 1. Fluorescence spectra
was collected from over 200 sites from arrays (h) and (i), for 30 seconds each. 153 of them displayed the characteristic NV
centre broad phonon sideband (centred around 700 nm), although the zero phonon lines (NV 0 at 575 nm and NV - at 637 nm)
were almost always too weak to distinguish. We also noted no obvious shifting of the phonon sideband.
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Array ID Empty Sites
Populated Sites
Percent Yield
b
c
d
e
f
g
total
10
30
65
109
42
106
362
613
593
558
514
581
517
3376
98
95
89
82
93
82
90
Table 1. Quantification of nanodiamond material coverage of six of the eight arrays indicated in Figure 1. Each array was fabricated with 623
apertures developed in PMMA, and after deposition of nanodiamond material and removal of the photoresist, the yield was quantified by eye
from SEM micrographs.
The quantification of nanodiamonds that do host NV centres in contrast to those that do not could be achieved with an array
that has individual particles at each site. As the arrays hold multiple particles per site, we restrict our statistical analysis not to
the number of nanodiamonds that host NV centres, but the number of sites that host at least one NV centre, and the number of
nanodiamonds over 30 nm present (estimated visually from SEM micrographs). We note that the sites with NV fluorescence
and those without show similar numbers of particles per site. The average for the former is 21 with a standard deviation of 10,
and the average for the latter is 17 with a standard deviation of 9.
To collect time-dependent fluorescence data, we used pulse laser excitation on those sites that displayed typical NV
fluorescence (153 sites in total from 220 sites from arrays (h) and (i) shown in Figure 1). Measuring the fluorescent intensity I
as a function of time t allowed us to calculate the fluorescent lifetime τ of a site by fitting the data (with the Matlab routine
lsqcurvefit) to the basic exponential decay equation I = αe−t/τ + β (with α and β as scaling parameters to account for total
fluorescence and background). Three representative lifetime traces are shown in Figure 3 (a), along with a measurement taken
at an off-array site to gauge the instrument response and background fluorescence of the substrate.
Single exponential fitting gives a limited interpretation of the data, so more rigorous analysis was performed with a fitting
i=1 bi exp (−t/ci) for n exponentials with weighting bi and
function of a simple sum of weighted exponentials of the form a + ∑n
lifetime ci, and background a. Each time series was analysed for n = 1,2,3,4,5, and the best fit determined by choosing the
number of exponential terms that maximised the adjusted R2 parameter for the series. As constraints, the first exponential was
constrained 0 < c1100 ns, and the other exponentials constrained 5 < ci < 100 ns i > 1. We discarded lifetimes close to 5 ns
and 100 ns as being artefacts of the fitting routine.
Figure 3 (b) shows a histogram of the lifetimes obtained from the fluorescence time series fits. The data set contained 153
fluorescent sites from a total of 220 analysed sites. The modal fluorescence lifetime was 24.5 ns, with a strongly asymmetric
distribution towards longer lifetimes. As expected, all of the measured lifetimes were greater than the spontaneous emission
lifetime of NV centres in bulk diamond. Interestingly, most sites showed a single lifetime, and only two sites showed two
distinct lifetimes in the range expected for NV centres (between 12 and 50 nm). We do not interpret this as implying that most
of the sites hosted single, isolated NV centres. Instead it is likely that NV centres within a single site see similar refractive
index environments, and hence radiative density of states, and therefore exhibit similar lifetimes. Further analysis is required
to fully understand the significance of this result. Fluorescent lifetime imaging experiments have shown similar lifetime
distributions18, 45, but the work presented here is the first time that this extent of statistical analysis has been conducted by direct
measurement of NV centre lifetimes in as-received nanodiamonds.
Finally, we also performed a study of whether any SiV centres were present in the as received nanodiamond material. SiV
centres are usually studied only after nanodiamond material has been irradiated24, or after diamond films are grown via CVD
under specific conditions to incorporate silicon atoms46. We observed no distinctive peaks at 737 nm corresponding to the
zero phonon line of the SiV centre, which is unsurprising. Since the nanodiamonds used in this study were unprocessed, it is
unlikely that they hosted many, if any, SiV centres.
Conclusion
We have demonstrated a directed self-assembly method to position nanodiamonds in pre-determined locations at room
temperature with minimal material processing. Despite an average of 10% random assembly, the process is faster than
manipulating individual particles, and the agility of EBL array pre-determination provides excellent spatial control.
To advance the technique to a point where device fabrication is viable, particle attachment must be studied further. Recently
published work41 suggests an optimal nanodiamond solution concentration to minimise agglomeration. Other researchers47
have demonstrated ways to prevent agglomeration of nanodiamonds in solution and control their zeta potential, but they add
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degrees of complexity such as chemical processing and additive surface modification.
The ordered nature of arrays allows for identification of the same particles over different stages of an experiment. Potential
future directions include characterising a set of nanodiamonds, deterministically changing their environment or modifying their
surface, and re-characterising, with the aim of quantifying the modification.
Arrays of NV centres in bulk diamond have previously been used for magnetic imaging48, and single nanodiamonds have
been used for single-molecule nuclear magnetic resonance14. Our nanodiamond arrays provide initial steps for combining these
two techniques for chemical sensing and imaging of biological systems, for example the surface of cells.
The work shown here also opens avenues for fabricating defect-tolerant hybrid photonic devices, consisting of, for example,
nanodiamonds on dielectric substrates or waveguides.
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Acknowledgements
The authors acknowledge the facilities, and the scientific and technical assistance of the RMIT University's Microscopy &
Microanalysis Facility, a linked laboratory of the Australian Microscopy & Microanalysis Research Facility. We also thank Dr.
Desmond Lau for assistance with the confocal microscope studies. This work has been supported by ARC grants (FT110100225,
FT160100357, LE140100131, CE140100003).
Author contributions statement
A.H. conducted experiments and wrote the manuscript, B.G. and A.G. conceived the experiments and reviewed the manuscript.
All authors analysed and interpreted the data.
Additional information
Competing financial interests: The authors declare no competing financial interests.
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Figure 1. Composite optical micrograph (a) and individual SEM micrographs (b)-(g) of nanodiamond arrays on a glass substrate. The pitch
from array to array is 50 µm. Arrays (h) and (i) were studied by SEM and confocal microscope. Arrays (b)-(g) were only imaged by SEM.
Each array has 623 sites (25 × 25 with 2 on the lower right corner omitted for orientation purposes) and a pitch of 1.5 µm. The degree to
which the self-assembly was successful has been quantified by eye and is shown in Table 1.
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Figure 2. SEM (a) and confocal microscope (b) micrographs of one corner of array (h) from Figure 1. SEM micrographs of individual sites
indicated (i, ii, iii, and iv) are shown below. The comparison of SEM to confocal micrographs highlights the variation of fluorescence from
nanodiamond to nanodiamond: even though site (iii) has fewer particles than the other three, they all show similar fluorescence (∼25 k counts
per second).
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Figure 3. (a) Fluorescent decay traces from three different sites and a background measurement. The black lines are single exponential fits
(presented for simplicity although multiple exponential fitting analysis was performed), and the values are the calculated average lifetimes of
all the NV centre emission at that particular site. The inset is an example of a spectrum acquired, used to distinguish between sites that held
NV centres and those that did not. (b) A histogram of the lifetimes obtained from the fluorescence time series fits. The data set contained 153
fluorescent sites from a total of 220 analysed sites, and the lifetimes were calculated with a sum of weighted exponentials. We discarded
lifetimes close to 5 ns and 100 ns as being artefacts of the fitting routine. The modal fluorescence lifetime was 24.5 ns, with a strongly
asymmetric distribution towards longer lifetimes. As expected, all of the measured lifetimes were greater than the spontaneous emission
lifetime of NV centres in bulk diamond.
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|
1910.01474 | 1 | 1910 | 2019-10-03T13:57:30 | Correlating the nanoscale structural, magnetic and magneto-transport properties in SrRuO3-based perovskite oxide ultra-thin films | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | We investigated the structural and magnetic properties of bare SrRuO$_3$ (SRO) ultra-thin films and SrRuO$_3$/SrIrO$_3$/SrZrO$_3$ (SRO/SIO/SZO: RIZ) trilayer heterostructures between 10 K and 80 K, by comparing macroscopic data using magneto-optical Kerr effect (MOKE) and magneto-transport (anomalous Hall effect: AHE), with nanoscale fingerprints when applying non-contact scanning force microscopy (nc-SFM) and magnetic force microscopy (MFM). SRO and RIZ ultra-thin films were epitaxially grown at 650C onto vicinal SrTiO$_3$ (100) single-crystalline substrates to a nominal thickness of 4 and 4/2/2 unit cells (uc), respectively. Our correlated analysis allows associating topographic sample features of overgrown individual layers to their residual magnetization, as is shown here to be relevant for interpreting the macroscopic AHE data. Although the hump-like features in the AHE suggest a magnetically extured skyrmion phase to exist around 55 K associated to the topological Hall effect (THE), both our MOKE and MFM data cannot support this theory. In contrast, our SFM/MFM local-scale analysis finds the local coercive field to be strongly dependent on the effective layer thickness and stoichiometry in both the SRO and RIZ samples, with huge impact on the local band-structure. In fact, it is these variations that in turn mimic a potential THE through anomalies in the AHE resistivity loops. | physics.app-ph | physics |
Correlating the nanoscale structural, magnetic and magneto-transport properties in
SrRuO3-based perovskite oxide ultra-thin films
Gerald Malsch,1, ∗ Dmytro Ivaneyko,1, † Peter Milde,1, ‡ Lena Wysocki,2 Lin Yang,2
Paul H.M. van Loosdrecht,2 Ionela Lindfors-Vrejoiu,2, § and Lukas M. Eng1, 3, ¶
1TU Dresden, Institute of Applied Physics, 01062 Dresden, Germany
2II. Physikalisches Institut, Universitat zu Koln, 50937 Koln, Germany
3ct.qmat, Dresden-Wurzburg Cluster of Excellence - EXC 2147, TU Dresden, 01062 Dresden, Germany
We investigated the structural and magnetic properties of bare SrRuO3 (SRO) ultra-thin
films and SrRuO3/SrIrO3/SrZrO3 (SRO/SIO/SZO: RIZ) trilayer heterostructures between 10 K
and 80 K, by comparing macroscopic data using magneto-optical Kerr effect (MOKE) and
magneto-transport (anomalous Hall effect: AHE), with nanoscale fingerprints when applying
non-contact scanning force microscopy (nc-SFM) and magnetic force microscopy (MFM). SRO and
RIZ ultra-thin films were epitaxially grown at 650◦C onto vicinal SrTiO3 (100) single-crystalline
substrates to a nominal thickness of 4 and 4/2/2 unit cells (uc), respectively. Our correlated
analysis allows associating topographic sample features of overgrown individual layers to their
residual magnetization, as is shown here to be relevant for interpreting the macroscopic AHE
data. Although the hump-like features in the AHE suggest a magnetically textured skyrmion
phase to exist around 55 K associated to the topological Hall effect (THE), both our MOKE and
MFM data cannot support this theory. In contrast, our SFM/MFM local-scale analysis finds the
local coercive field to be strongly dependent on the effective layer thickness and stoichiometry
in both the SRO and RIZ samples, with huge impact on the local band-structure.
In fact, it is
these variations that in turn mimic a potential THE through anomalies in the AHE resistivity loops.
I.
INTRODUCTION
Magneto-transport and Hall measurements are versa-
tile techniques to inspect and characterize magnetically
active materials on the micrometer length scale. Extra
contributions to the ordinary Hall effect arising through
the sample magnetization dependence, have been identi-
fied as the so-called anomalous Hall effect (AHE). In fer-
romagnetic materials, the AHE usually is proportional to
the sample magnetization and therefore shows the same
hysteretic behavior [1, 2].
Recently, additional contributions to the AHE have
been postulated that arise from topologically non-trivial
magnetic textures [3]. This component was labelled as
the Topological Hall Effect (THE) and is of great impor-
tance when proving the existence of skyrmions by sim-
ple transport measurements. As a non-trivial topological
magnetic texture, skyrmion lattices (SkLs) are expected
to contribute to the THE, being visible as hump-like
anomalies on top of the expected AHE [4]. As a conclu-
sion, it is often assumed that any contribution resembling
the THE recognized in the Hall data might originate from
the presence of skyrmions [5].
The research field in skyrmion phenomena is given
a lot of attention these days, specifically also with the
big view of finding the next-generation material that
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supports skyrmion formation, especially for data stor-
age applications [6]. One avenue of research is to dis-
cover an insulating skyrmion host material, that in turn,
would allow electric field manipulation of magnetic do-
mains/phases using standard gating techniques [7, 8].
Hence, epitaxially-grown ferromagnetic perovskite oxide
heterostructures are of central interests [5, 8 -- 11] since
they undergo a metal-to-insulator transition for layer
thicknesses measuring between 3 and 6 unit cells [12].
A ferromagnetic perovskite oxide that is well suited
is the 4d-transition metal
for generating skyrmions,
SrRuO3 (SRO). Epitaxial layers of SRO and heterostruc-
tures involving SRO-layers recently have been in the
research focus, because of peculiar features appear-
ing in the AHE resistivity loops that hint towards
a significant THE contribution possibly inferred by
skyrmions. This interpretation is currently under heated
debate [12, 13]. Therefore, we combine here magneto-
transport with both nanometer- and micrometer-scale
spectroscopy/microscopy for
inspecting two selected
samples, a bare SrRuO3 ultra-thin film of a 4uc-thickness
(4SRO) and a 4SRO layer overgrown with 2-by-2 uc of
SrIrO3 and SrZrO3, resulting in the trilayer 4RIZ het-
erostructure. Our study unambiguously proves that the
origin for the observed THE lies within the 4SRO layer,
needing absolutely no skyrmions to be present in order
to mimic the hump-like features observed in the THE
data.
II. MATERIAL
III. SAMPLE PREPARATION
2
SrRuO3 (SRO) constitutes one of the few functional
perovskite materials with formula ABO3 that is ferro-
magnetic [14, 15]. The ferromagnetic order is robust
and preserved down to at least 3 unit cells (uc) when
epitaxially grown on SrTiO3 (STO) (100) single crys-
tals [5]. Furthermore, SRO films have a large magneto-
crystalline anisotropy [16] that is easily manipulated for
instance through epitaxial heterostructuring. At or-
dered perovskite interfaces, strong structural coupling
via the oxygen octahedra provides a valuable way to
engineer magnetic anisotropy, by controlling the easy-
axes orientation of the magnetization [17, 18]. Mag-
netic interfacial coupling also provides an appropriate
route to manipulate magnetic ordering,
for instance
in SrRuO3/La0.7Sr0.3MnO3 superlattices engineered for
strong anti-ferromagnetic interlayer coupling that results
in non-collinear magnetic ordering [19, 20].
In 1999, a Lorentz transmission electron microscopy
study [21] reported on 30-100-nm-thick SRO films re-
vealing magnetic stripe domains that are separated by
3-nm-narrow domain walls (DWs). These domains dras-
tically impact the linear magnetoresistance for zero-field
cooled SRO films, as documented by Klein et al. [22].
A more recent study reports on a 4-K MFM investiga-
tion of patterned rectangular magnetic nano-islands of a
10-nm-thick SRO film [23].
With respect to skyrmion formation in heterostruc-
tures based on broken inversion symmetry, SRO is a
very attractive candidate due to the perpendicular mag-
netic anisotropy, exhibited when epitaxially grown on
single crystalline (sc) STO(100). A very recent exam-
ple is the work on SrRuO3/SrIrO3 (SRO/SIO) bilay-
ers on STO(100) substrates, in which the ferromagnetic
ultra-thin SRO layer is interfaced with the paramagnetic
SIO that exhibits large spin-orbit coupling (SOC) [5].
The inherent inversion symmetry breaking at the inter-
face as well as the proximity of the large SOC of heavy
5d Ir ions, are expected to result in a strong interfacial
Dzyaloshinskii-Moriya interaction (DMI). The latter may
lead to non-collinear magnetic ordering in the ultra-thin
SRO layers (around 4 - 6 unit cells) with strong perpen-
dicular magnetic anisotropy [5, 8].
Matsuno et al.
showed MFM investigations of
a 5uc-SRO/2uc-SIO bilayer heterostructure that were
claimed to hint towards the formation of tiny bubble-
like magnetic domains, interpreted as a possible skyrmion
phase [5]. Therefore, we investigate here the magnetic do-
main formation and morphology in epitaxial ultra-thin
SRO films and SRO/SIO/SZO (RIZ) heterostructures,
in which the SRO layer thickness is kept the same (i.e.
4uc). We find the nanoscopic origins of SRO layer over-
growth as well as the locally varying coercive field within
the 4uc SRO films to be the origin of macroscopic AHE
anomalies, rather than a textured skyrmion phase.
The heterostructures under study [see Fig. 1] were fab-
ricated by pulsed-laser deposition (PLD) using a KrF ex-
cimer laser. High-oxygen pressure reflective high energy
electron diffraction (RHEED) was used for both monitor-
ing the layer-growth in-situ and to analyze the film struc-
ture at the growth temperature and after cooling (see also
supplemental information S1). sc-STO(100) vicinally cut
under an angle of about 0.1◦C were used as substrates
after etching in buffered HF and annealing at 1000◦C for
2 hours in air. These substrates then show a uniform
and continuous TiO2 surface termination, hence provid-
ing a stepped sample surface with regularly distributed
terraces of a 200 - 450 nm width.
Stoichiometric SRO, SIO, and SrZrO3 (SZO) targets
were employed for PLD. The layer growth was performed
in a 0.133 mbar O2 atmosphere, and STO substrates were
heated to 650◦C. The laser fluence was set to 2 J/cm2
while the laser repetition rate for the SRO and SIO/SZO
were 5 and 1-2 Hz, respectively. SZO was used here as a
protective capping layer on top of the SRO/SIO bilayer,
in order to avoid deterioration in the SIO stoichiometry
due to moisture [24]. Both the SIO and SZO were grown
to a 2 pseudo-cubic uc thickness each, as determined by
RHEED specular spot oscillations. As a result, we ob-
tained a set of 2 samples [see Fig. 1]: (a) a 4uc-thin
bare SRO sample (furtheron labelled as 4SRO), and (b)
a 4/2/2-uc thin SRO/SIO/SZO trilayer heterostructure
(labelled furtheron as the 4RIZ sample).
FIG. 1. Sample design of (a) the bare SRO thin film with a
4 pseudo-cubic unit cell thickness (4SRO), and (b) the 4RIZ
SRO/SIO/SZO trilayer heterostructure made up from 4/2/2
unit cells, respectively.
IV. MAGNETIC AND MAGNETO-TRANSPORT
STUDIES
4SRO and 4RIZ samples firstly were analyzed at the
macroscopic length scale, employing the magneto-optical
Kerr effect (MOKE) (for details see supplement S2), and
magneto-transport measurements using a van-der-Pauw
Hall setup in transverse geometry. In order to suppress
the contribution of the linear magnetoresistance, electri-
cal contacts were cyclically permutated to read proper
Hall data.
It is commonly assumed that the total Hall resistivity
of a ferromagnet is given by the sum of the ordinary
Hall resistivity ρOHE and the anomalous Hall resistivity
contribution ρAHE as:
ρxy = ρOHE + ρAHE = µ0(R0Hz + RAMz).
(1)
Here µ0 is the permeability of vacuum, R0 is the Hall
coefficient that mainly depends on the majority-charge
carrier density, and Hz denotes the magnitude of the ex-
ternal magnetic field applied perpendicular to the xy-
sample plane. The second term in Eq. (1) accounts for
the anomalous Hall effect exhibited in the presence of
a spontaneous magnetization and large spin-orbit cou-
pling; the AHE resistivity is directly proportional to the
macroscopic magnetization component Mz perpendicu-
lar to the current flow direction [25], with RA denoting
the anomalous Hall coefficient [2].
Fig. 2 displays the magnetic field dependence of the
total Hall resistance as measured for (a) the bare 4SRO
FIG. 2. Total Hall resistance loops for (a) the 4SRO
film, and (b) the 4RIZ trilayer heterostructure. Note that
the 4SRO in (a) is paramagnetic above 80 K, while the 4RIZ
heterostructure shows an open ρxy hysteresis loop proving the
ferromagnetic order.
3
thin film, and (b) the 4RIZ trilayer heterostructure at se-
lected temperatures. Capping the nominally 4SRO layer
with 2-by-2 layers of the strong SOC SIO and the large
bandgap insulator SZO, results in dramatic changes in
both the magnetic and magneto-transport behavior of
the SRO layers.
Bare 4SRO thin film exhibits a positive anomalous
Hall effect constant RA within its ferromagnetic phase
[Fig. 2(a)], while the 4RIZ trilayer shows a negative RA
at low temperatures switching to positive values close to
70 K. [Fig. 2(b)].
Due to the previously found dependence of the anoma-
lous Hall effect of SRO on the details of its band struc-
ture [26], the observed variations of the AHE characteris-
tics may be related to differences in the crystal structure
of the SRO layers [27]. The non-monotonous AHE tem-
perature dependence already reported for a broad variety
of SRO single crystals and epitaxial films [26, 27] includ-
ing our 4RIZ trilayer structure, is a clear indication of
structural stabilization of orthorhombic SRO layers by
the overgrown layers of orthorhombic SIO and SZO. The
stabilization of a tetragonal structure due to the sup-
pression of the RuO6 octahedra tilts was observed for
SRO layers grown on DyScO3(110) substrates when be-
ing capped with the cubic SrTiO3 with no tilts of the
oxygen octahedra, with direct impact on the Curie tem-
perature of the ferromagnetic SRO film [28]. In case of
our trilayer sample, the ferromagnetic transition temper-
ature of the underlying SRO is significantly enhanced.
The Hall resistance loops of the 4SRO films at 80 K
exhibits a S-shaped behavior, indicating that the layer
must already be in its paramagnetic state. However, at
80 K, the Hall loop of the 4RIZ trilayer still displays an
open hysteresis curve, which demonstrates that the SRO
layer here is ferromagnetic, in agreement with our MFM
investigations (see later).
In strong magnetic fields where the sample magneti-
zation is assumed to be constant, the total Hall resis-
tance of the 4RIZ trilayer reveals a negative slope that
is attributed to electron-dominated Hall transport [see
Fig. 2(b)]; moreover, the corresponding fluctuations in
the Hall resistivity of the 4SRO layer [Fig. 2(a)] are neg-
ligibly small. The observed differences of the transport
properties hence clearly indicate severe changes in the
electronic band structure for the SRO layer of the 4RIZ
trilayer structure.
Close to the temperature where the AHE changes
sign (around 55 K), hump-like anomalies pop up in the
Hall resistance when investigating our 4RIZ trilayer [see
Fig. 2(b)], in fact mimicking a contribution that might be
attributed to the THE. Recently, several works claim the
observation of a THE contribution to the AHE resistiv-
ity hysteresis loops in SRO ultrathin films and SRO/SIO
bilayers [5, 8, 13, 29]. Notably, no such features were
detected in our bare 4SRO layers.
To clarify such an extra contribution, we compare
our AHE with MOKE data obtained in-situ using a
home-built MOKE setup (for details see supplementary
4
chapter S3).
V. LOW-TEMPERATURE SFM AND MFM
MEASUREMENTS
The nanoscale analysis of the two sample systems
4SRO and 4RIZ is carried out with our low-temperature
(LT) non-contact scanning force microscope (SFM) op-
erating under ultrahigh vacuum (base pressure below
2 · 10−10 mbar). SSS-QMFMR-type MFM probes with
a hard magnetic coating were used for both topographic
(SFM) and magnetic (MFM) inspection, revealing a me-
chanical quality factor of Q ≥ 1.45 · 105. The nominal
cantilever oscillation amplitude of 10 nm is kept constant
at all times, while then taking the measured frequency
shift ∆f for topographic and magnetic feedback control
in SFM and MFM, respectively.
MFM is performed in a two-path-mode, quantifying
the sample topography in the first scan while then re-
tracting the tip by 20 nm for the second scan, in or-
der to be sensitive to the longer-ranged magnetic forces,
only [30].
A. Nanoscale real-space analysis of 4SRO and 4RIZ
Fig. 4 displays typical topographic nc-SFM scans of
both the 4SRO (a) and the 4RIZ (b) samples. We clearly
observe the stepped surface morphology with terraces of
a 0.39 nm height extending over 200 - 450 nm each, as in-
duced by the vicinal STO substrate. Due to the stochas-
tic nature of the deposition process, step edges of the
4SRO surface do not exactly terminate at straight STO
step edges, creating areas of sample over- and under-
growth by 5uc and 3uc of SRO, respectively. Fig. 4(a),(b)
show this behavior for the two samples in a birds-view il-
lustration (xy-scan), while Fig. 4(c),(d) and Fig. 4(e),(f)
display the same fact in a cross-sectional and pseudo 3D
manner.
The 4RIZ structure is presented in Fig. 4(b). This to-
pographic scan shows a considerably more disturbed sur-
face arrangement, with both several nm high peaks and
many dips in the stepped surface, reaching depths com-
parable to the observed step height. Unlike for the bare
4SRO film, the discrimination of different layer heights
is no longer possible, since SRO, SIO, and SZO layers
intermix in numerous stacking variants, as illustrated in
Fig. 4(f).
Step-and-terrace morphology that is typical to films
grown in the PLD step-flow growth regime on vicinal
substrates, turns out to play a crucial role in crystallo-
graphic domain formation and growth [31, 32]. Preferen-
tial alignment with terrace step edges oriented along the
[001] orthorhombic axes has been reported for thinner
SRO films, while rotation of the magnetic easy axis into
the substrate plane is observed for medium-range film
thicknesses (between 3 and 7.5 nm) [33]. Both our 4SRO
FIG. 3. Magnetic field dependence of the anomalous Hall
resistance (black) and the Kerr rotation angle (red) for
the 4RIZ trilayer sample measured close to the AHE compen-
sation temperature at 55 K (a) and 60 K (b), respectively.
MOKE measurements were carried out with incoherent light
at λ = 480 nm in order to suppress optical artefacts in these
measurements.
information S2). Firstly, when sweeping the external
magnetic field, the macroscopic MOKE rotation loops
recorded on the 4RIZ thin film, resemble the switching
behavior of a hard ferromagnetic layer in the easy axis
configuration, independent of temperature [see Fig. 3].
In fact, MOKE delivers no hints for the existence of an
additional nontrivial magnetic phase, as inferred by the
Hall measurements. Moreover, the coercive field strength
and the magnetic field where the AHE vanishes, differ
drastically [see Fig. 3(b)].
These strong discrepancies hence can be solved only
with a proper analysis of domain nucleation in SRO thin
films, and shedding light on those nanoscale processes
that unambiguously contribute to magnetization rever-
sal in the 4RIZ heterostructures. We therefore apply low-
temperature (LT) non-contact scanning-force microscopy
(nc-SFM) and magnetic-force microscopy (MFM) to cor-
relate the macroscopic AHE findings with local-scale
structural and magnetic information on both the 4SRO
and the 4RIZ samples, respectively. SFM/MFM was per-
formed over the full temperature range from 10 to 80 K;
the 55-K-results are discussed within the main text here,
while all other data can be found in the supplement (see
5
consistent with literature [34].
Nevertheless, we still observe a low contrast visible
along the step edges, due to differences in the magnetic
susceptibility of different layer heights that in turn affects
the MFM signal strength. At the negative field value of
-22 mT, the tip changes its magnetization direction and
aligns with the externally applied field.
Domain growth initiates at approximately -100 mT,
forming small magnetic nuclei that rapidly increase their
domain size when increasing the magnetic field; as shown,
the film has mostly switched at -240 mT [see Fig. 5(e)],
with some isolated areas remaining pinned and stable up
to -300 mT.
When reversing the field, we observe strong pinning
of both initial magnetic nuclei and the switch-resistant
areas, with several sites and domain wall shapes sur-
viving over larger field changes and field ramping. One
also sees that domain growth is affected, but not domi-
nated, by the stepped substrate topography, with sharp
vertical domain walls parallel to the terrace direction (y-
axes) appearing during switching, a clear indication of
realignment of the SRO to the topographically-induced
anisotropy. Nonetheless, as grown/switched domains ex-
tend over multiple terraces reaching some micrometers in
lateral size.
By using Otsu's thresholding method [35] to separate
the domains (for details see supplement S4), it is pos-
sible to extract hysteresis curves from individual MFM
images, obtained for both the 4SRO and 4RIZ samples at
different temperatures. The temperature dependence of
the coercive field is shown in Fig. 6 for comparison with
MOKE measurements. The width, slope and coercive
fields of MFM hysteresis curves are in good agreement
to the hysteresis curves observed by MOKE, and there-
fore also considerably sharper than the peaks observed in
the Hall data. At the critical field where the hump-like
features start to appear in the AHE, the 4RIZ sample
still appears uniformly magnetized under MFM. At no
point do we see an intermediate state or second transi-
tion indicating the presence of a magnetic structure dif-
ferent from the uniformly polarized domains, skyrmionic
or otherwise.
C. MFM of bare 4SRO thin films
For comparison reasons, field sweeps of the simpler
4SRO sample were as well investigated by MFM. While
full MFM scans at all temperatures of 10 K, 55 K, and
80 K are found in the supplemental sections S3.1, S3.2,
and S3.3, the summarized results for the 10 K and 55 K
MFM findings on the 4RIZ thin films are illustrated in
Fig. 7 here.
What is plotted in Fig. 7 is a 2-dimensional map that
shows the variation in the average magnetic field value
needed to locally switch the sample surface at exactly
that sample surface spot. We run a full hysteresis loop
at every position of this 512 pixel x 512 pixel image,
FIG. 4. Topographic images of (a) the bare 4SRO
film, and (b) the 4RIZ trilayer heterostructure. Note
the over- and undergrown 5uc and 3uc areas in (a). Pro-
files of the stepped terraces in (c) 4SRO, and (d) the 4RIZ
heterostructure, are taken along the dashed lines in (a) and
(b), respectively.
(e) Illustration of the differences in layer
thickness as caused by under- and overgrowth of 4SRO. (f)
Illustration of possible over- and undergrown combinations
for the 4RIZ structure.
and 4RIZ films clearly belong to the first class and sce-
nario, concluding that the easy axis of the 4uc SRO layer
always stands perpendicular to the sample surface. This
is of great importance also to our MFM data acquisition
and interpretation.
B. MFM of the 4RIZ trilayer heterostructure
MFM/nc-SFM was applied for inspecting both the
4SRO and 4RIZ thin films at all temperatures. The
4SRO data at 10 K, 55 K, and 80 K are found in the
supplemental chapters S3.1, S3.2, and S3.3, respectively,
while the 4RIZ MFM inspections are posted in chapters
S3.4 and S3.5 for 10 K and 80 K. The 55 K RIZ findings
are discussed here and now.
A series of relevant MFM images when switching the
4RIZ trilayer heterostructure at 55 K from +2 T to -2 T
are illustrated in Fig. 5. The terraced substrate sample
surface is still vaguely visible, aligned along the y-axes in
all images. When sweeping from high magnetic fields at
+2 T [Fig. 5(k)] to the zero field state, the 4RIZ sample
remains fully magnetized and no domains with reversed
magnetization form. This is in full accordance to our
hysteresis magnetization loops where the remanent mag-
netization is equal to the saturated magnetization, and
6
FIG. 5. MFM measurements of the 4RIZ trilayer heterostructure at 55 K, showing the domain formation during a
forward [(a)-(e), upper row] and reversed magnetic field sweep [(f)-(k), lower row], respectively. Note that all magnetic features
laterally extend over many terraces, reaching sizes of micrometers.
and then deduce (by applying Otsu's method) the corre-
sponding local coercive field.
Notably, provided the thin-film sample is homoge-
neous, defect-free, and the growth being independent
of any (topographic) structure, the resulting picture
should reveal a uniform color/gray shade, since all ar-
eas/domains must switch at the same coercive field value,
independent of temperatures. Concurrently, the error bar
would be zero. Nevertheless, what we experimentally ob-
serve and display in Fig. 7, is that even bare 4SRO is far
from being ideal, in that the material switches unevenly:
To the one side, the coercive field shows strong variations
when plotted over the whole sample area, ranging from
13 to 28 mT at 55 K [Fig. 7(b)] with an error bar of
15 mT, and 330 to 460 mT at 10 K [Fig. 7(a)] with a
130 mT error bar. Rectangular areas along step edges
are seen to switch cooperatively as a whole. Note also
the black areas in these two figures that correspond to
the 5uc and 3uc over-/undergrown areas.
Also note from Fig. 7 that larger patches displayed in
uniform color indicate areas that switch at the same coer-
cive field, as nicely seen for very low temperatures at 10 K
[Fig. 7(a)]. All the greenish areas in Fig. 7 thus are 4uc
SRO layers, and hence are expected to show the same
switching behavior on the uniformly TiO2-terminated
STO (100) sample surface. Nevertheless, we find these
areas to split up into SRO regions that have completely
different switching fields, both parallel and perpendicu-
lar to the step edges. Variation of the epitaxial strain
FIG. 6. Coercive fields of 4SRO and 4RIZ samples,
and their areas depending on the number of unit cells.
FIG. 7. Local switching field of the 4SRO ultra-thin
film, measured at (a) 10 K and (b) at 55 K. Black areas do
not switch within the shown interval. Note the large variation
in Hc over the sample areas at nominally the same thickness
of 4uc. This variation is strongly temperature dependent.
over the length scale of a terrace width is highly unlikely,
which leaves us to conclude that electronic band struc-
ture variations for these different patches must be the
origin for the documented variable switching behavior.
Also, the underlying anisotropy of the material causes
the domains to elongate first perpendicular to the step
edges before then growing along them. While at 10 K,
this shape asymmetry becomes less pronounced and do-
main growth is observed both along and perpendicular
to the STO step edges [see Fig. 7(a)], the material also
shows a strong preference for hosting nucleation sites,
most preferentially at terrace step edges. This is an in-
dicator that despite the large difference in coercive fields
between the 4SRO and 4RIZ sample, the observed mem-
ory effect in the domain growth of the heterostructure is
due to these defects within continuous 4SRO layers.
These field maps can be used for further analysis. We
created histograms of areas adjacent to and far from the
observed topographic step edges for the 4SRO-10-K and
4RIZ-55-K measurements to try and correlate changes in
the field with these features. The results can be seen in
Fig. 8: In both cases, the histograms close to the edges
are slightly, but not significantly wider than on the ter-
races. For SRO, the distribution close to the edges shows
FIG. 8. Histograms of the coercive fields per pixel,
for the bare 4SRO thin film at 10 K (a) and the 4RIZ trilayer
heterostructure at 55 K (b).
7
a higher number of points switching later, while for RIZ,
there is no obvious tendency to either direction. This is
not an artefact of the larger scan range used for the RIZ
measurements: If the SRO pictures are downsampled to
feature a similar pixel resolution per µm, the resulting
histograms retain their shapes and features.
In fact, one might have the impression that domains
monitored at an early stage of nucleation or at the later
annihilation stage, do resemble isolated skyrmion bubbles
such as the ones reported for metallic multilayer systems
Pt/Ir/Co [36]. However, our MFM investigations clearly
cannot support this picture:
• Firstly smallest feature sizes that could possibly be
interpreted as skyrmions are of a ∼ 10 nm size only,
but mostly at the resolution limit of our MFM in-
vestigations.
• Secondly, these bubble-like features occur quite
rarely, and always as isolated structures that never
form a continuous SkL.
Our MFM investigations hence cannot support the
presence of any skrymions in these samples, neither iso-
lated skyrmions nor any SkL, as we had found in many
other single crystalline materials [37 -- 42]. What seems
much more likely though, is that the local sample in-
homogeneities (stoichiometry, band-structure) reflected
through the varying local coercive fields, are the origin
for mimicking the THE behavior in our transport data.
The anomalous Hall constant RA in turn varies slightly
and impacts the AHE loops at 55 K and 60 K to differ
from both the Kerr loops and local-scale magnetization
loops acquired by MFM.
VI. CONCLUSIONS
Our correlated study involving MOKE, nc-SFM,
MFM, and Hall transport proves that subtle differences
in both the magnetization and structural overgrowth of
the 4uc SRO layered thin film are the origin for both
macroscopic transport anomalies and nanoscopic mag-
netic hysteresis fluctuations. MOKE and MFM results
are extremely consistent when analyzing both type of
samples, the bare 4uc SRO film PLD grown on vicinal
STO(100), and the 4SRO overgrown by 2uc SIO and
2uc SZO. Our results strongly indicate that anomalies
of the Hall resistance loops, which resemble a topologi-
cal Hall effect contribution, may have other origins than
non-trivial topological magnetic domains (e.g.
isolated
skyrmions or skyrmion lattices). Inhomogeneities of the
local stoichiometry may result in variations of the local
magnetization switching behavior and affect the anoma-
lous Hall constant, and thus impact on the AHE resistiv-
ity loops measured while switching the magnetization of
the samples between the saturated states.
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VIII. ACKNOWLEDGEMENTS
G.M., D.I., P.M. and L.M.E. gratefully acknowl-
edge financial support by the German Science Founda-
tion (DFG) through the Collaborative Research Cen-
ter Correlated Magnetism: From Frustration to Topol-
ogy (CRC1143) Project No. 247310070, the SPP2137
(Project No. EN 434/ 40-1), and projects No. EN 434/
38-1 and No. MI 2004/ 3-1. L.M.E. also gratefully ac-
knowledges financial support through the Center of Ex-
cellence - Complexity and Topology in Quantum Matter
(ct.qmat) - EXC 2147. I.L-V. thanks the DFG for finan-
cial support (project LI3015/3-1, No. 335038432, and
project LI3015/5-1, No. 403504808 within SPP 2137)
and through the CRC1238.
IX. COMPETING FINANCIAL INTERESTS
The authors declare no competing financial interests.
SUPPLEMENTARY ONLINE MATERIAL
S1. Pulsed Laser Deposition
10
We monitored the PLD layer growth by reflective high energy electron diffraction (RHEED), in order to observe
the growth mode and also to calibrate the layer thickness of the individual layers of the samples. Fig. S.1 summarizes
the RHHED investigations of both the 4SRO [Fig. S.1(a)] and 4RIZ [Fig. S.1(b)] sample, where the intensity of the
RHEED specular spot (00) is plotted in red. These intensity behaviors indicate that the SRO layer in both samples
was growing in a step-flow manner up to the 4uc nominal thickness, while the SIO and SZO layers for the 4RIZ sample
grew in layer-by-layer mode to the desired 2uc thickness [two oscillations are monitored during SIO and SZO growth;
see Fig. S.1(b)].
The RHEED patterns taken after the 4uc SRO layer growth at 650◦C and 150◦C indicated a very smooth growth
pseudomorphic to the STO(100) substrate, also showing no orthorhombic reflections. In comparison, the RHEED
pattern of a thick SRO film (150 MLs, i.e. about 60 nm thick) grown under the same conditions, shows orthorhombic
reflections when cooled down to 120◦C [see Fig. S.1(c)].
FIG. S.1. RHEED intensity acquired during the growth of the (a) 4SRO and (b) of 4RIZ films. In (c) the RHEED pattern
of the SRO film was taken under the growth conditions and in (d) the RHEED pattern of the same 4 uc SRO layer was
acquired after the sample was cooled to 150◦C in 200 mbar O2 and the chamber was evacuated. For comparison, in (e) the
RHEED pattern of a 150 uc thick SRO layer is displayed, with the yellow boxes marking the extra reflections coming from the
orthorhombic structure of the thick layer.
The results of the magneto-optical Kerr effect investigations of the 4SRO film are summarized in Fig. S.2. The
squarish hysteresis loops are in good agreement with the sharp magnetization reversal observed in the microscopic
S2. MOKE investigations
MFM studies. Above 20 K, the background contribution is much larger than the signal originating from the bare 4
uc SRO film disabling a proper extraction of the sample contribution.
In Fig. S.3 we summarize the magneto-optical Kerr effect studies of 4RIZ film.
In accordance with the MFM
investigations, the Kerr rotation angle loops show the switching behavior of a conventional ferromagnet for the
magnetic field applied along the magnetic easy axis for the whole ferromagnetic temperature range. As shown in
Fig. S.3(c), the coercive field strength exhibits a fast decrease with increasing temperature. The finite coercive field
strength at 80 K is related to the enhancement of the ferromagnetic transition temperature compared with the bare
SRO thin film.
11
FIG. S.2. Polar magneto-optical Kerr effect measurements of the 4uc SRO film, performed with an incoherent light source of
600 nm wavelength: hysteresis loops of the Kerr rotation angle as a function of applied magnetic field at various temperatures.
FIG. S.3. Polar magneto-optical Kerr effect measurements of 4RIZ film, performed with an incoherent light source of 480 nm
wavelength: (a)-(b) hysteresis loops of the Kerr rotation angle as a function of applied field at various temperatures; (c)
Temperature dependence of the coercive field.
S3. MFM measurement details on the 4SRO and 4RIZ thin-film samples
1. 4SRO ultra-thin film at 10 K
The series of MFM measurements of bare 4uc SRO ultra-thin film were performed down to the lowest temperature
that is possible with our SFM setup, which is approximately 10 K. A series of relevant 10-K-MFM images as acquired
while sweeping the external magnetic field from +2 T to -2 T, are displayed in Fig. S.4. At +2 T, the 4SRO sample is
12
magnetically saturated. When reaching the zero field, no domain nucleation with opposite magnetization is observed,
while the full SRO layer remains fully magnetized.
Nevertheless, a small but non-zero magnetic contrast is always visible at 0 T whenever comparing areas of a 4
and 3 uc height. Due to the different magnetic susceptibilities of these layers a clear, net magnetization for the 3 uc
structure arises that in turn reveals the documented MFM contrast.
At the negative field value of -60 mT, the tip changes its magnetization direction and aligns with the applied field.
Starting at a field of -360 mT domains nucleate, with tiny round domains of less than 100 nm appearing, visible as
dark round spots in Fig. S.4(b). For a field of -390 mT [Fig. S.4(c)] more domains appear and part of those already
nucleated expand in size or coalesce with neighbors [Fig. S.4(d)]. In a field of -500 mT [Fig. S.4(e)] almost the entire
area switched its magnetization, except a few domains which switch only in fields higher than -1 T. These domains
correspond to the topographic features observed as islands formed on top of the terraces in Fig. 4(a), i.e. to areas of
5 uc thick SRO film.
FIG. S.4. MFM measurements of bare 4SRO ultra-thin films at 10 K, showing magnetic domain formation during forward
magnetic field sweep (a)-(e) and reversed magnetic field sweep (f)-(k). Black lines mark step edges extracted from topography
scan. Domain nucleation sites are marked in white in (b) and (g).
Measurements performed on reversing the field between -2 T and positive fields exceeding the coercive field allowed
us to observe memory effects in the nucleation of the domains. Comparing the MFM images taken in a field of 360 mT
[Fig. S.4(g)] and the MFM image scanned in -360 mT [Fig. S.4(b)], we observed that most of the nuclei appeared at
the same sites. As not only these domains appear in the same positions, but these positions lie predominantly at step
edges of either the SRO or STO surfaces, it has to be assumed that there is a strong preference for the nucleation to
start at the sites of lattice defects.
From the switched magnetization versus unswitched magnetization area a coercive field value of about 400 mT
was determined for 4 uc, see Fig. S.4(c). The thickness of 5 uc in SRO layer lead to sensitively higher coercive field
above 1 T, that is close to the value in SIO/SRO/SZO trilayered heterostructure. The magnetization almost reached
saturation for 500 mT [Fig. S.4(n)], only few domains with size smaller than 100 nm were unswitched, besides those
domains related to the island in the topography, which switch in high fields.
2. 4SRO ultra-thin film at 55 K
Imaging at 55 K revealed similarities in the observed phenomenons of differing coercive fields for areas of differing
film thickness and a strong pinning to specific sites. Representative images from the MFM field sweeps are shown in
Fig. S.5.
The sample was magnetized in a high perpendicular magnetic field of 2 T and slowly switched to the low magnetic
field of -2 T, and back. The coercive field is drastically reduced with the temperature, with the first domain of
opposite magnetization is observed at applied field of -12 mT. Unlike for low temperatures, the shape and size of the
nucleated domains (about 400 nm) match the terrace width of the substrate. All domains reach across the entire
width of its step, even the line-shaped domain visible in Fig. S.5(a), marked with a white ellipse, strongly indicating
that the nucleation of domains begins by a very rapid elongation of the initial nucleus perpendicular to the step edge.
13
FIG. S.5. Magnetic images of bare 4SRO ultra-thin film at 55 K. (a)-(c) MFM images of a sweep from positive to negative
field. (d) Image from reverse sweep. The scan size is 3 µm x 3 µm. Red lines mark domain edge locations shared between
pictures, black contours the topography steps.
While no memory effect could be observed for the initial nucleation due to the speed of domain growth, comparing
the locations of domain walls across several images reveals a number of domain wall pinning sites, at which the growth
stops for a time (Compare the red lines in Fig. S.5(d) to those in (a) and (b)).
For the areas with 5 uc of SRO, the coercive field remains higher than for the main terraces, although it is similarly
reduced by the higher temperature, to a value of approximately 250 mT.
For a field value between -18 mT and -20 mT, the fraction of domains of magnetization aligned with the applied
field direction reaches 50%. Thus the value of the coercive field is a bit lower than 20 mT at 55 K. For a field value
of -30 mT almost the entire scanned area switched its magnetization in the direction of the applied field.
Two important conclusions can be drawn for the behavior of field-driven magnetic domains in bare SRO ultra-thin
film at 55 K. Firstly, formation of the domains at this temperature is strongly influenced by the step-and-terrace
morphology of the substrate. The size of nucleated domains matches the terrace width, and once formed these
domains grow along the terraces and do not cross the surface steps. The 0.39 nm high surface steps appear to act as
potential barrier for the domain wall propagation.
Strong memory effects were exhibited as the domains nucleated at the same sites for both positive and negative
field of about the same value. Secondly, at no stage of the magnetization reversal between saturation states did we
observe the formation of either domains or skyrmions.
3. 4SRO ultra-thin film at 80 K
MFM investigations of bare SRO ultra-thin film at 80 K are presented in Fig. S.6. It shows that the 4 uc thick
SRO terraces remain in its paramagnetic phase, while the 5 uc thick areas still display ferromagnetic behavior. It is
the first important difference to the SIO/SRO/SZO trilayer.
14
FIG. S.6. MFM images of bare SRO ultra-thin film at 80 K. Only areas corresponding to an edge overgrowth show switching
behaviour.
4. 4RIZ heterostructure at 10 K
In contrast to the growth of the domains for the bare film, where the magnetic states of neighboring steps could
be regarded as independent, the growth in the trilayer 4RIZ samples progresses both along and perpendicular to
the steps. Similarly to the bare sample, the speed of the growth appears strongly dependent on local features, with
swift growth to a fixed point followed by uncorrelated pauses of stagnation. Similarly, not every spot appears equally
suitable for the cross-step growth, as the straight lines of step edges can still be observed as a strongly preferred
domain edge.
FIG. S.7. MFM images of domains formed in the 4RIZ trilayer heterostracture at 10 K, with a recurring structure seen in
several sweeps marked in red.
One example of pinning sites can be seen in Fig. S.7, which shows slices taken from successive sweeps of the same
location on the crystal. In both directions and despite the long time (3 days) between those sweeps, a hammerhead
shaped domain is visible, remaining stable against the magnetization reversal longer than the surrounding material.
This structure spans several step edges in width and has several parallel boundary lines at an angle to the grid given
by the vicinal surface, indicating a stronger influence of a different crystallographic direction on the domain wall
stability at these spots.
5. 4RIZ heterostructure at 80 K
15
FIG. S.8. MFM images of the 4RIZ trilayer heterostructure at 80 K. MFM phase images displaying: (a) magnetic domains
formed upon zero-field cooling, (b) magnetic domains formed after prior saturation in -2 T, removal of the field and application
of 40 mT magnetic field.
The magnetic domains in 4RIZ heterostructure formed upon zero-field cooled to 80 K, shown in the MFM image
in Fig. S.8(a). The domains have random shapes and sizes ranging from about 100 nm to a few µm. However, the
domain patterns show a clear influence of the terrace ledges when they form after applying a large perpendicular
magnetic field of 2 T, then removing the saturation field and applying a field of opposite polarity (values of 40-50 mT,
which exceeded the coercive field at 80 K). The domains formed follow the direction of the terraces, being elongated
parallel to the ledges and extended in widths primarily across a single terrace (200-450 nm width), as is shown in
Fig. S.8(b).
S4. Local-scale MFM hysteresis loops and Otsu's method
FIG. S.9. Hystereses obtained from MFM data, for the bare sample at 10 K (a) and the trilayer at 55 K (b).
To extract magnetization value and therefore hysteresis from the MFM images, an thresholding approach is used:
A threshold value is chosen for the image such that the upwards magnetized areas are above this value in signal,
and the downwards magnetized areas below. Then, the total magnetization, as a ratio compared to the saturation
magnetization, can be simply obtained as a ratio of the thus selected areas.
The thresholding is automated using the optimization measure invented by Noboyuki Otsu [35], splitting the image
such that the sum of weighted variances of the resulting parts is minimal. This algorithm is known to produce good
results for images containing two classes of brightness, even if the width of the classes is so large as to cause significant
overlap in the histogram.
For the initial saturated state and the onset of nucleation, the assumptions for the validity of Otsu's method are not
fulfilled, resulting in the algorithm giving a nonsensical value for the magnetization based on its attempt to separate
the measurement noise on top of the constant saturation value. To correct for these cases, additional fixed thresholds
were chosen above and below the average value of the image, with their value corresponding to the greatest distance of
Otsu's threshold value to the image average. These thresholds are sensitive to the initial nucleation and final domains
respectively, allowing for the total hysteresis to be stitched together from the three curves by merging them at their
tangent points.
While the method can only be applied for ferromagnetic transitions and is insensitive to paramagnetic responses, it
at the very least gives the correct value for the coercive field. In addition, as it is based on the MFM images, it can be
used to spatially resolve this field, by determining when any individual pixel switches magnetization, as determined
by its progress over the relevant threshold.
16
|
2002.07070 | 1 | 2002 | 2019-12-20T16:26:30 | 28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing | [
"physics.app-ph",
"cond-mat.mes-hall",
"quant-ph"
] | This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned. | physics.app-ph | physics | Conference paper: 2017 Silicon Nanoelectronics Workshop
28nm Fully-Depleted SOI Technology:
Cryogenic Control Electronics for Quantum Computing
H. Bohuslavskyi1,2, S. Barraud1, M. Cassé1, V. Barral1, B. Bertrand1, L. Hutin1,
F. Arnaud3, P. Galy3, M. Sanquer2, S. De Franceschi2, and M. Vinet1
1 CEA, LETI, Minatec Campus, F-38054 Grenoble, France ; 2 CEA, INAC-PHELIQS, F-38054 Grenoble,
France ; 3 STMicroelectronics, 850 rue J. Monnet, 38920 Crolles, France.
E-mail: [email protected]
Abstract
This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI
CMOS technology. A comprehensive study of digital/analog performances and body-biasing
from room to the liquid helium temperature is presented. Despite a cryogenic operation,
effectiveness of body-biasing remains unchanged and provides an excellent VTH
controllability. Low-temperature operation enables higher drive current and a largely
reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to
cryogenic low-power electronics. Applications such as classical control hardware for
quantum processors are envisioned.
Introduction
Since the early 2010's, increasing attention has been paid to Si-based spin qubits for
quantum computing [1-3]. Besides allowing for long spin coherence, largely enhanced by
the use of isotopically enriched nuclear spin-free 28Si layers [3], Si qubits benefit from well-
established microelectronics fabrication techniques. This constitutes a clear asset in the
prospect of large-scale qubit integration [4]. Recently, the implementation of Si spin qubit
on a foundry-compatible CMOS SOI platform was demonstrated [5, 6], marking an
important first step towards the realization of a Si-based quantum computer. In a quantum
processor, qubits need to be individually addressed, i.e. initialized, manipulated, and
measured. This large-scale parallelism seems hardly manageable without the use of co-
integrated, or at least proximal, classical hardware. Therefore, extending the operation of
both digital and analog Si electronics to temperatures as low as 4 K (and below) appears as
an urgent task to undertake in parallel with qubit development. At such low temperatures,
however, detrimental effects on device operation have been observed due to dopant freeze-
out and charge trapping [7-8]. Nevertheless, the actual impact of these effects in advanced
CMOS technology remains only barely explored [9]. Here, for the first time, we present a
study of digital/analog performances and body-biasing of FDSOI down to 4K. We aim at
assessing the potential of FDSOI for low-temperature electronics. FDSOI is an attractive
solution since it can simultaneously deliver low-power electronics and a versatile technology
framework for qubits development [4-6].
FDSOI process features
The FDSOI transistors are fabricated with a gate-first high-k metal gate. They are
processed on 300mm (100) SOI wafers with a buried oxide thickness of 25nm [10]. The
7nm-thick Si channel is undoped. The EOT is 1.55nm for NMOS (resp. 1.7nm for PMOS)
for thin oxide (GO1) and 3.7nm for thick oxide (GO2) transistors. Regular VTH transistors
are studied with PWELL (resp. NWELL) and additional P-type (resp. N-type) ground plane
implantation for NMOS (resp. PMOS) devices. Fig.1 summarizes the main technology
features and shows a cross-section of FDSOI transistor.
(a)
P
P
N+
PMOS
NMOS
P+
NWELL
PWELL
Min CPP=114nm
M1 pitch=90nm
TSOI=7nm
Gate: HKMG metal
S/D: Si EPI + I/I
(b)
(c)
Fig.1. (a) Cross-section, (b) key ground rules, technology features and (c) TEM of FDSOI transistor.
Device digital performances down to 4K
The carrier mobility (µEFF) vs inversion charge (NINV) is an important parameter to
characterize the behavior of devices. NINV is obtained by integration of gate-channel (CG)
capacitance shown in Fig.2 for different temperature (T). The T-dependence results in a shift
in VTH but does not influence much the shape of CG. The electron and hole µEFF measured
down to 4K are shown in Fig. 3.
Fig.3. Electron and hole µEFF versus NINV for 4K≤T≤300K
(LG=W=2µm, VBACK=0V).
Fig.2. Gate-channel capacitance versus
VGS for different T (LG=W=2µm,
VBACK=0V).
Fig.4. µEFF,MAX versus T. LG=W=2µm for GO2 and
LG=W=1µm for GO1. VBACK=0V
Since phonon mobility is sufficiently weak and can be neglected at such low temperature,
the carrier mobility is enhanced as temperature decreases (Fig.4). It can also be noted that
thick gate oxide (GO2) weakens remote Coulomb and soft-optical phonon scattering. It
therefore leads to an improved carrier mobility [11,12]. Typical transfer characteristics of
GO2 transistors are plotted in Fig.5 (NMOS) and Fig.6 (PMOS). The increase of VTH as
the temperature is reduced is accompanied by a significant improvement of current for a
given overdrive gate voltage (VGS-VTH=0.5V). At 4K, a subthreshold swing SSLIN of only
7mV/dev is achieved in the linear regime (Fig.7). Even at high drain voltage (VDS=0.9V),
the evolution of subthreshold swing versus T remains the same (see inset of Fig.7). At the
same time, the linear current IODLIN of NMOS GO2 is enhanced by a factor ×6.2 (Fig.8). By
comparison with 300K, the substantial increase of devices performance at low-temperature
is summarized in Fig.9. The saturation current IODSAT (VGS-VTH=0.5V and VDS=0.9V)
increases due to higher mobility while the subthreshold swing SSSAT remains very low. GO1
transistors (N/PMOS) show a higher saturation current than GO2 transistors due to a lower
EOT.
Fig.5. IDS(VGS) for different T (LG=W=2µm,
VDS=50mV, VBACK=0V).
Fig.6. IDS(VGS) for different T (LG=W=2µm,
VDS=50mV, VBACK=0V).
Fig.9. IODSAT versus SSSAT for different T (LG=W=2µm for
GO2 and LG=W=1µm for GO1). VBACK=0V.
The use of back biasing (BB) is a key factor in optimizing performances and power
consumption. Therefore, maintaining its efficiency at very low temperatures is crucial. In
addition, back-biasing can provide a useful control tool for qubits, enabling fast readout
circuitry and a tunable coupling between neighboring quantum dots [4,6]. The VTH
controllability offered by the back-gate at 4K is shown in Fig.10. Compared to 300K, the
BB factor (g=DVTH/DVBACK) for N and PMOS remains unchanged (Fig.11). It means that the
device behavior is not altered by freeze-out phenomena who are likely to play an important
role at low-temperature [8,9].
Fig.7. SSLIN versus T (LG=W=2µm for GO2 and
LG=W=1µm for GO1).
Fig.8. IODLIN versus T (LG=W=2µm for GO2 and
LG=W=1µm for GO1). VBACK=0V.
Back bias efficiency down to 4K
Fig.10.
(LG=W=2µm,VDS=50mV, T=4.3K).
IDS(VGS)
for
different VBACK
Fig.11. VTH,NORM versus VBACK (GO1/GO2
devices, VDS=50mV).
At short gate length (LG=28nm), the device performance (Fig.12) studied on NMOS
GO1 transistors leads to a similar conclusion. The subthreshold swing is strongly reduced
with T independently of the active layer width W (Fig.13). Fig14 shows that at 28nm gate
length, the linear current (VGS-VTH=0.5V) is significantly improved (+62% at 4K). The
effect of BB measured at 4K is identical to the 300K one (Fig.15). In case of PMOS GO1,
low-temperature combined with a short LG lead to a modification of subthreshold behavior:
oscillations occur at low VDS (Fig.16). They are most likely induced by the presence of
dopants diffused from S/D into the channel [13]. However, these oscillations are strongly
suppressed at high VDS (Fig.17).
Fig.12. IDS(VGS) for different T (VDS=50mV,
VBACK=0V, LG=28nm, W=80nm).
Fig.13. SSLIN versus T for NMOS with various W
(LG=28nm, VDS=50mV, VBACK=0V). SSSAT(T) is in inset.
Fig.14. IODLIN versus T for different W
(LG=28nm, VDS=50mV, VBACK=0V).
IDS(VGS)
Fig.15.
for different VBACK
(LG=28nm, VDS=50mV, T=4K). The effect
of BB is shown in the inset.
Fig.16. IDS(VGS) for different T (VBACK=0V,
LG=28nm and W=80nm).
Fig.17. IDS(VGS) for different T (VBACK=0V,
LG=28nm and W=80nm).
Device analog performance down to 4K
Device analog performance is also assessed down to 4K through the key parameters
such as the transconductance GM, the output conductance GD and the intrinsic gain AV0=
GM/GD. The figure of merit GM/IDS vs IDS×L/W for NMOS (resp. PMOS) GO1 is reported in
Fig.18 (resp. Fig.19). GM/IDS being inversely proportional to the subthreshold swing (in weak
inversion) and proportional to µEFF (in strong inversion) the [GM/IDS vs IDS] metric at 4K is
strongly improved. GM/W vs intrinsic voltage gain (AV0) is shown in Fig.20. Low-
temperature and back-biasing significantly improve the transconductance GM (due to
increased µEFF) and the intrinsic gain AV0 (due to reduced GD).
Fig.18. GM/IDS vs IDS×LG/W for different
VBACK, T. NMOS GO1 device with LG=28nm
and W=80nm.
Fig.19. GM/IDS vs IDS×LG/W for different
VBACK, T. PMOS GO1 device with LG=28nm
and W=80nm.
For the first time, the operation of 28nm Fully-Depleted-SOI CMOS technology was
successfully demonstrated down to 4K. We have shown that a reduced temperature operation
largely improves CMOS device performance. Additionally, under a DC operation, the ability
to adjust VTH through back-biasing remains unchanged at 4K. This unique capability could
be particularly helpful in the development of fast power-efficient peripheral circuitry
(multiplexing, control and readout of qubits) and allows increased flexibility in the design
of a scalable classical-quantum interface.
Fig.20. GM/W vs AV0 for different T, W, LG and
VBACK. N/PMOS GO1 device.
Conclusions
Acknowledgements
References
This work is partly funded by French Public Authorities (NANO 2017) and Equipex
FDSOI. We also acknowledge financial support from the EU under Project MOS-QUITO
(No.688539).
[1] E. Kawakami et al., Nature Nanotech., 9, p.666, 2014. [2] J.T. Muhonen et al., Nature
Nanotech., 9, p.986, 2014. [3] M. Veldhorst et al., Nature Nanotech., 9, p.981, 2014. [4] S.
De Franceschi et al., EUROSOI-ULIS, p.124, 2016, [5] L. Hutin et al., p.1-2, VLSI, 2016. [6]
De Franceschi et al., IEDM, 2016. [7] G. Ghibaudo et al., Microelectronics Eng., 19, p.833,
1992. [8] E. Simoen et al., IEEE TED, 42, p1100, 1995. [9] E. Charbon et al., IEDM, 2016.
[10] N. Planes et al., VLSI, p.133, 2012. [11] M. Cassé et al., IEEE TED, 53, p.759, 2006.
[12] V.-H. Nguyen et al., IEEE TED, 61, p.3096, 2014. [13] R. Wacquez et al., VLSI, p.193,
2010.
|
1912.09808 | 1 | 1912 | 2019-12-20T13:18:03 | Time constant of the cross field demagnetization of superconducting stacks of tapes | [
"physics.app-ph",
"cond-mat.supr-con"
] | Stacks of REBCO tapes can trap large amounts of magnetic fields and can stay magnetized for long periods of times. This makes them an interesting option for major engineering applications such as motors, generators and magnetic bearings. When subjected to transverse alternating fields, superconducting tapes face a reduction in the trapped field, and thus it is the goal of this paper to understand the influence of all parameters in cross field demagnetization of stacks of tapes. Major parameter dependencies considered for the scope of this paper are ripple field amplitude, frequency, tape width, tape thickness (from 1 to 20 $\mu$m), and number of tapes (up to 20). This article also provides a systemic study of the relaxation time constant $\tau$, which can be used to estimate the cross-field demagnetization decay for high number of cycles. Modeling is based on the Minimum Electro-Magnetic Entropy Production method, and it is shown that the 2D model gives very accurate results for long samples when compared with 3D model. Analytical formulas for large number of cycles have been devised. The results show that when the ripple field amplitude is above the penetration field of one tape, the stack always fully demagnetizes, roughly in exponential decay. Increasing the number of tapes only increases the relaxation time. The formulas derived also hold when validated against numerical results, and can be used for quick approximation of decay constant. They also show that the cause of the decreases of cross-field demagnetization with number of tapes is the increase in the self-inductance of the magnetization currents. The trends and insights obtained for cross field demagnetization for stacks are thus very beneficial for engineers and scientists working with superconducting magnet design and applications. | physics.app-ph | physics |
Time constant of the cross field demagnetization
of superconducting stacks of tapes
Anang Dadhich, Enric Pardo, Milan Kapolka
Institute of Electrical Engineering, Slovak Academy of Sciences,
Bratislava, Slovakia.
December 23, 2019
Abstract
Stacks of REBCO tapes can trap large amounts of magnetic fields
and can stay magnetized for long periods of times. This makes them
an interesting option for major engineering applications such as motors,
generators and magnetic bearings. When subjected to transverse alter-
nating fields, superconducting tapes face a reduction in the trapped field,
and thus it is the goal of this paper to understand the influence of all
parameters in cross field demagnetization of stacks of tapes. Major pa-
rameter dependencies considered for the scope of this paper are ripple
field amplitude, frequency, tape width, tape thickness (from 1 to 20 µm),
and number of tapes (up to 20). This article also provides a systemic
study of the relaxation time constant τ , which can be used to estimate
the cross-field demagnetization decay for high number of cycles. Modeling
is based on the Minimum Electro-Magnetic Entropy Production method,
and it is shown that the 2D model gives very accurate results for long
samples when compared with 3D model. Analytical formulas for large
number of cycles have been devised. The results show that when the rip-
ple field amplitude is above the penetration field of one tape, the stack
always fully demagnetizes, roughly in exponential decay. Increasing the
number of tapes only increases the relaxation time. The formulas derived
also hold when validated against numerical results, and can be used for
quick approximation of decay constant. They also show that the cause of
the decreases of cross-field demagnetization with number of tapes is the
increase in the self-inductance of the magnetization currents. The trends
and insights obtained for cross field demagnetization for stacks are thus
very beneficial for engineers and scientists working with superconducting
magnet design and applications.
1
Introduction
Superconducting stacks of REBCO tapes can trap upto 17.7 T field [1]. It is
seen, though, that on the application of transverse field (or cross field), there
1
is a decay in the trapped field of the sample [2 -- 10], which is possible for su-
perconducting bulks as well [11, 12]. This demagnetization of superconducting
tapes and stacks can have adverse effects on various electrical applications, for
example, the runtimes of motors, and should be an important topic of current
research.
Superconducting motors are the next potential choice for the high energy
electrical applications. The main benefits of such motors over conventional ones
are reduction of size (upto 70 percent), weight, noise, and vibration. Increased
efficiency is one of its another benefits and the superconducting stacks of tapes
can be used in rotors of HTS motors [13 -- 16]. Recent advances in high tempera-
ture superconductivity and cryogenic systems have led to the use of HTS motors
in various new applications, such as in aviation for future electric aircraft ( Hy-
brid Distributed Electric Propulsion) [17, 18], generators [19] (with HTS coils),
marine propulsion, and wind turbines [20] [21].
Some studies have been made for the cross-field demagnetization of HTS
tapes [2, 4]. Through Critical State Model, Brandt [2] shows that for a sin-
gle tape there is a decay of trapped field until an asymptotic value is reached
for ripple field amplitudes below the parallel penetration field, Bp. For ripple
fields above the parallel penetration field, there is a sharp exponential decay
of trapped field, resulting in full demagnetization. The cause of this behaviour
is the appearance of the dynamic magneto-resistance [2] [22]. For large ripple
fields, superconducting bulks face more demagnetization as compared to the
HTS stacks, and can lose upto 50 percent of magnetization after just 1 cycle
of applied cross field [23]. The demagnetization is also larger for rotating fields
as compared to the cross fields [9].The demagnetization of the stacks is directly
dependent to the ripple field amplitude and ripple field frequency, and increases
linearly with the ripple field amplitude. This is due to the direct proportional-
ity of DC electric field generated inside the superconductor to the ripple field
amplitude according to Brandt and Mikitik theory [2, 24], atleast for high rip-
ple fields. Demagnetization also increases with the frequency of crossed field,
though the frequency dependence of the demagnetization per given number of
cycles is not very drastic [6, 23]. Also, for thin tapes, this magnetization decay
is very slow [4]. Similarly, the relaxation decay constant is also dependent on
different parameters, and it decreases with ripple field amplitude and increases
with number of tapes [4, 6]. However, measurements in [5] show that for large
enough ripple fields (above the parallel penetration field of one tape, according
to [2]) the stack fully demagnetizes after many cycles (104 or more). Since in
motors for aviation the involved frequencies are atleast hundreds of Hz, 104 cy-
cles represent to the order of 1 minute. Therefore, it is of capital importance to
predict the behaviour well above 104 cycles, reaching upto millions of cycles. In
order to avoid cumbersome numerical calculations, estimations could be done
by extrapolating the results for a relatively low number of cycles.
It is important to develop better computer programs which can model very
thick stacks (above 20 tapes), which this paper achieves. We use a high mesh
for our unique method, which enables us to model the effect of demagnetization
in presence of low ripple field amplitudes or high number of tapes. The use
2
of high mesh is key to obtain accurate results of the time constant, and hence
the enhanced numerical method compared to previous ones is a substantial
contribution to the field. The dependence of decay rate constant on various
stack and field parameters that we present is also a very meaningful study for
fast approximation of demagnetization rates, which can directly be used by
engineers and scientists. In addition, we develop analytical formulas for tapes,
thin stacks, and thick stacks. Apart from enabling fast estimations, the physical
background of these formulas provide an explanation of the causes of several
observed effects, such as the increase in the time constant with the number of
tapes.
The structure of this paper is as follows. First we derive the analytical formu-
las of time constant for a single tape and stack (thick and thin), and compare it
with Brandt's formula [2] for single tape. Then, a small introduction to model-
ing method and the parameters used for 2D simulations using MEMEP method
is given. Later, we present our results for dependence of demagnetization and
time constant of a single tape and stacks on various ripple field parameters and
tape geometry. We conclude our paper by comparing the analytical formulas of
time constant with numerical results.
2 Analytical Method
Based on the fact that the trapped field decays exponentially for ripple fields
above the parallel penetration field, the demagnetizaton decay rate constant
(Time Constant) is the time taken by a superconducting stack or tape to reach
1/e, or around 37 percent, of its original magnetization after the cross field is
applied, where e is the Euler number. An approximated time constant formula
for different cases can be derived analytically as follows.
2.1 Time constant for a single tape
First, we assume that the tape is very long, so that the end effects are not
important and, consequently, the problem can be modeled by its cross-section
only. We also assume that the current density, J, which is equal or below
the critical current density, Jc, is uniform in each half of the cross-section (1).
Although, the current density is not uniform [2], this will result in a good
approximation, as we show at the end of this section and in section 5. Finally,
we assume that the dynamic magneto-resistance that the ripple field creates can
be predicted by the critical state model, as done in [2].
With these assumptions, the voltage drop along the whole magnetization
loop is V = 2R(I)I, where R(I) is the dynamic magneto-resistance and I = Jwd
(see figure 1). We also find that V = −L I, where L is the loop self-inductance
and I = dI/dt. Then, the differential equation for I is
2R(I)I = −L I.
(1)
3
(a)
(b)
Figure 1: Qualitative sketch of the considered strip, length l and width 2w, with
(a) magnetization currents, and (b) cross-section with uniform J approximation.
4
The inductance L corresponds to that of a thin film with current density +J
on one half and −J on the other half. Using that L = 1
S dSJA, with I, l,
S, and A being the current in the circuit, the tape length, its cross section, and
the vector potential respectively, we obtain
I 2
(cid:82)
L = l
µ0
π
2 ln 2.
(2)
Due to the transverse AC field in a slab for Bm being larger than the threshold
field Bth, the dynamic magneto resistance is [2, 22, 25, 26],
R = 2lf d
1
Ic
with
(cid:20)
(cid:21)
(cid:19)
,
Bm − Bth(I)
,
(cid:18)
d
2
1 − I
Ic
Bth(I) = µ0Jc
where d and f are the thickness of the tape and the frequency, respectively,
Ic is the critical current relative to the main magnetization loop, and Jc is the
critical current density, which is assumed constant.
Substituting Ic= Jcwd, R can be written as
(cid:20) Bm
Bp
(cid:21)
R = µ0lf
d
w
− 1 +
I
Jcwd
,
(5)
with Bp as the penetration field of one tape in parallel applied field, given as
Bp = µ0Jc
d
2
;
(6)
where Bm is the applied cross field amplitude.
Substituting R from equation (5) into (1) gives the first order differential
equation for the current I:
where, a and b are constants, given as
aI 2 + bI + L I = 0,
(3)
(4)
(7)
(8)
(9)
(10)
and
If
R from equation (5) becomes
a = f µ0
2
Jcw2 ,
(cid:18) Bm
Bp
(cid:19)
,
− 1
b = 2f µ0
d
w
Bm
Bp
− 1 (cid:29) I
Jcwd
,
5
(cid:18) Bm
Bp
d
w
(cid:19)
− 1
,
2
R
l
= f µ0
(11)
which is independent of I. In addition, as a result of (10), the term with a in
(7) can be dropped. Then, the solution of I(t) is
where, I0 is the current at time t = 0. From equation (12), the time constant is
I(t) = I0e− bt
L ,
(12)
Thus, according to equation (9) and (2), the time constant τ will be
τ =
L
b
.
(cid:18) Bm
Bp
(cid:19)
− 1
.
1
τ
=
f π
ln 2
d
w
(13)
(14)
Another equation for time constant is found by Brandt [2] for a single tape
considering J(x) dependence, which is given as
1
τ
= Λ
2πf d
w
(
Bm
Bp
− 1),
(15)
where, from numerical calculations, the constant Λ is found to be 0.6386, and
w is the half width of the sample. Equation (15) also takes the assumption of
large ripple fields or low currents into account [equation (10)].
Equations (14) and (15) both are very similar to each other in terms of
dependencies. Equation (15) is more accurate since it allows non-uniform J,
but it is harder to derive analytically. Also, it is limited to a single tape. With
our formula, given the simple assumptions, the derivation is easier and we can
find more formulas regarding stacks of tapes, as can be seen below.
It also
enables a straightforward interpretation of the results.
2.2 Time constant for a thin stack of tapes
For a thin stack of very small height, the problem can be considered similar to
that of a single tape. Now, we make the additional assumption that the current
in the magnetization loop of each tape is the same. Then, the magnetic flux on
a single tape in the stack is φ = nLI, with I as the current in each tape, n as
the number of tapes, and L being the self inductance of one tape. Thus, the
time constant is n times larger than the time constant of a single tape.
(cid:18) Bm
Bp
(cid:19)
− 1
1
τ
=
f π
ln2
d
wn
.
(16)
This provides a simple explanation for the linear increase of the time constant
with the number of tapes observed in [4]. As we can see, this increase is simply
due to the larger mutual inductance between the whole stack and the current
in the magnetization loop of one of the tapes of the stack.
6
2.3 Time constant for a thick stack of tapes
Next, we take a thick stack into account, where the height fo the whole stack,
D, is much larger than the tape width. We also assume that the tape-to-tape
separation is much smaller than the tape width.
For this case, the magnetic flux crossing a tape generated by the whole stack
is
φ = nM I,
(17)
where, M is the mutual inductance between the stack and one tape, n is the
number of tapes, and I is the current in one tape. Assuming continuous ap-
proximation and uniform J, M for a stack can be found from
(cid:90)
1
M =
IstackI
Stape
dSJAstack,
(18)
with Stape and Istack being the cross section of one tape and the current in the
stack (Istack = nI), respectively, and J being the current density in one tape.
For Astack, we also assume the slab approximation, D >> w. This results in
M = l
4
3
w
D
µ0,
(19)
where, 2w is the width of stack and l is the length.
From equation (17), the total voltage along the current loop can be given as
V =
E · dl = φ = −M n I,
(20)
(cid:73)
From V = 2RI, the differential equation for this case and dynamic-magneto
resistance R is
2RI = −nM I.
Taking the assumption of (10), the solution for I(t) is found to be
I(t) = I0e− 2R
nM t = I0e− t
τ .
(21)
(22)
Thus, from equations (19), (11) and (22), the time constant for thick stacks of
tapes is
(cid:18) Bm
Bp
(cid:19)
− 1
1
τ
=
3
2
f
dh
w2n
.
(23)
For a finite stack with ferromagnetic material with high permeability present on
both top and bottom sides, the system is similar to a stack with infinite number
of tapes, and thus this formula can be used in this case too, which is also the
case of a stack in a motor with a magnetic circuit (see figure 2) [15, 16].
7
Figure 2: When a superconducting stack is kept between soft ferromagnets
(left), it can be assumed to be acting as an infinite stack (right).
3 Modeling method
Here, we use the Minimum Electro Magnetic Entropy Production (MEMEP)
variational method [27] [28] to model the cross-field demagnetization process of
superconductor stacks in 2D, which is a type of J formulation. This method is
faster than conventional finite element methods (FEM) because the surrounding
air does not need to be meshed under this model, saving many degrees of freedom
[29].
For infinitely long problems (2D), J becomes a scalar, further reducing the
number of degrees of freedom compared to FEM methods in the H formulation.
In this sense, MEMEP has many features in common with integral methods
[30 -- 32]. A difference is that MEMEP, as other variational methods, minimizes
a functional to find the current density, and can take the multi-valued E(J)
relation of the Critical State Model into account [33] [34] [28].
Here, we use the E − J power law, with power law exponent n=30, which is
given as
E(J) = Ec
(cid:32)J
(cid:33)n
J
J ,
(24)
Jc
where, Jc is the critical current density and Ec is the critical electric field. For
simplicity, we assume constant Jc, and hence we have taken Jc-independent
magnetic field into account in this work.
Here, we compare the 2D model from this work and the 3D model from
[28, 35] for benchmarking purposes. The width used for the tape is 12 mm for
both 3D and 2D model. The 3D model uses different lengths (24 mm, 36 mm,
60 mm), whereas the 2D model uses infinite length for the tape. From figure
3(a) and (b), it can be seen that for the tape lengths three times or more than
the width of the tape, the trapped field values are practically the same for both
2D and 3D models. Hence, 2D model can be used for long tape samples.
8
(a)
(b)
Figure 3: The comparison between 3D and 2D models shows that the 2D model
is realistic for tape lengths 3 times or more of the tape width. Graphs are for
(a) the whole trapped field behaviour, and (b) trapped field behaviour during
cross field demagnetization process. Different lengths of tape are used for the
3D model, while the 2D model assumes infinite length. The width of the tape
is 12 mm for both 2D and 3D models.
9
4 Modeling Configuration
The magnetization behavior of a single tape and stacks of tapes is analyzed
in the next section, under various conditions. By default, the tape thickness,
width, and separation between tapes are considered to be 2 µm, 12 mm, and
60 µm respectively. For the dependence on the thickness we take thicknesses
between 1 µm to 20 µm into account. The sample is initially magnetized by
Field Cool process for 100 seconds under 300 mT applied field amplitude. Then,
the sample is let to relax for 900 seconds. Later, a cross field is applied to the
sample. Unless specified, values are 200 mT amplitude, 500Hz frequency, and
maximum number of cycles 30, although some calculations reach up to 250
cycles. The critical current density Jc for the sample is considered to be 1.36
× 1010 A/m2, and the trapped field is observed at 1 mm distance from the
center of the surface of the stack. The standard mesh consists of 24 elements in
thickness and 40 elements in width, although for some cases the mesh reaches
up to 200 elements in the tape thickness (figure 8 (a) and (d)). The parallel
penetration field of the tape, according to the slab model [36] [37], is
Bp = µ0
Jcd
2
,
(25)
being 17 mT for d = 2 µm and our chosen Jc. The simulations are performed on
a 64 bit Linux operating system based computer with i7-7700 processor, having
3.60GHz x 8 logical cores and 16 GB RAM. With this machine, the computation
times for a single 2 µm tape, using high mesh (200 x 10 elements), is around
24 hours for 30 cycles and 20 time steps per cycle. For a 10-tape stack using
same parameters, the results take up to 1-1.5 weeks, depending on the ripple
field amplitude.
5 Modelling Results and Discussion
Figure 4 shows the demagnetization behavior of the current density in a stack of
10 tapes. The stack is fully saturated by the end of magnetization and relaxation
period. It is observed that there is significant demagnetization in the stack after
application of 30 cycles of cross ripple field.
The dependence of the demagnetization of a single tape on thickness and
ripple field amplitude for constant sheet critical current density (Jcd) is shown
in Figure 5. The demagnetization below penetration field of the tape ( 17 mT)
is negligible, but the trapped field decay is higher for high ripple fields [Figure
5(a)]. It is also seen from Figure 5(b) that, for constant sheet critical current
density, Jcd, the magnetization decreases with increase in thickness being this
behavior more evident for higher ripple field amplitudes. Thus, we see that the
real thickness is very important for modeling superconductors numerically, and
that artificial thickness should not be used in the case of cross field demagneti-
zation studies.
10
(a)
(b)
Figure 4: Current density profiles for a stack of 10 tapes, with single tape
thickness 2 µm, at (a) end of relaxation and magnetization (1000 seconds), and
(b) end of Cross Field Demagnetization (200 mT, 30 cycles). Legend normalized
by critical current density Jc = 1.36·1010 A/m2. Tape thickness expanded in
plot for better visibility.
11
This dependence on ripple field amplitude can also be seen for the constant
Jc case in Figure 6, for high number of cycles. It is observed that the trapped
field decay is in exponential form above the parallel penetration field of the 2
µm tape, in accordance to [2]. This is a very important feature, since from the
initial trapped field value, Bt0, we can extrapolate the trapped field curve as
Bt = Bt0e−t/τ ,
(26)
where τ is the time constant, as discussed in section 2, and Bt is the trapped
field at any given time t. However, we should keep in mind that for ripple
field amplitudes below the penetration field, the decay is no longer exponential,
reaching an asymptotic value for very high number of cycles [2]. Then the
calculated time constants for ripple fields below the penetration fields should be
regarded as pessimistic.
The demagnetization also depends on the number of tapes. From Figure 7,
it is observed that the demagnetization decreases with number of tapes, with
the magnetization of a 20-tape stack reducing by only about 3 percent after 30
cycles at 200 mT amplitude. For lower field amplitudes, this decay is even lower
for the 20-tape stack. The reason of the decrease in demagnetization rate with
the number of tapes in the stack is the increase in the self inductance of the
magnetization currents, as seen in section 2.
Given the exponential behavior of the trapped field curves, the time constant
analysis can be done for a single tape and a stack of tapes for constant Jc.
From Figure 8 (a), it can be seen that the time constant is higher for thicker
tapes, and increases with thickness. This is in contrast to the previous result in
Figure 5 for constant Jcd case where the time constant decreases with thickness.
For constant Jc case, this improvement is due to the increase of penetration
field (from 8.5 mT to 170 mT), which in turn reduces the dynamic magneto
resistance, and hence the increase in time constant is found. Then, recent
advances in increasing the superconductor thickness in REBCO for nearly the
same Jc has beneficial consequences regarding cross field demagnetization.
Similarly, the time constant decreases with ripple field amplitude due to
dynamic magneto-resistance, and hence 1/τ shows a linear behavior for ampli-
tudes over penetration field for a single tape. The time constant is also width
dependent, increasing with the width of tape. The cause is now the reduction
in the dynamic magneto-resistance associated to the main magnetizing loop [see
equation (4)]. Note that the tape self-inductance in equation (2) is independent
on tape width.
For the stack of more than one tape, the time constant is directly dependent
on number of tapes, and goes higher with more tapes in a stack, as can be
seen in Figure 8(d). At higher field amplitudes, there is still some decay in the
20-tape stack, but the time constant values are still much higher as compared
to that of a single tape.
The numerical results for time constants are also compared with the ana-
lytical formulas derived in section 2. Comparing numerical results for single
tape with time constants calculated from equations (14) and (15), we find that
12
(a)
(b)
Figure 5:
(a) Trapped field curves for one 2 µm thick tape, and (b) thickness
dependence of tape at different ripple fields during cross field demagnetization,
constant Jcd, 30 cycles
13
Figure 6: Trapped field dependence with change in ripple field amplitude for
tape thickness 2 µm, constant Jc=1.36·1010 A/m2 for 250 cycles
the numerical values are very close to the analytical results. These results are
supposed to get closer to each other when calculated for higher number of cy-
cles, being the numerical results under-estimated. Also, the analytical results
are found using the Critical State Model, so with higher n values for the E − J
Power Law, the numerical results will get closer to the analytical ones (Figure
9). Numerical calculations also agree for higher number of tapes (Figure 9), val-
idating equation (16) for its direct use in quick approximation of time constants
for a stack.
6 Conclusion
Cross field demagnetization is a major issue for HTS motors and its detailed
analysis can be done with the use of time constants. 2D MEMEP model is
used for this analysis, and it is shown that the trapped field results are the
same for both 2D and 3D models for long samples. This model is relatively
fast and promising for design. From numerical modeling for constant Jc, it is
observed that the time constant for a HTS stack increases with tape thickness,
tape width, and number of tapes in a stack, and decreases with ripple field
amplitude and frequency.
The time constant formulas for single tape and stack of tapes derived in the
paper are validated by the numerical results, and thus can be used for quick
approximation by engineers directly. Equations (14) and (15) both give very
similar results. Our formula (equation (14)) predicts a bit lower τ , and hence it
is more pessimistic, which is practical for engineering applications. The formula
for thick stacks could be used for stacks in a motor environment. Apart from the
predicting power of these formulas, their relatively simple physical background
14
(a)
(b)
Figure 7: Number of tape dependence on (a) Trapped field profile for 200
mT ripple field amplitude, and (b) Demagnetization for different ripple field
amplitudes. Tape thickness 2 µm, 30 cycles, Jc=1.36·1010 A/m2
15
(a)
(b)
(c)
(d)
16
Figure 8: Time Constant dependence with change in (a) thickness of tape, (b)
ripple field amplitude, (c) width of tape, and (d) number of tapes. Constant
Jc=1.36·1010 A/m2, 30 cycles. Mesh used for (a) and (d) is 200 x 10 elements,
with 200 in thickness and 10 in width.
(a)
(b)
(c)
17
Figure 9: Time constant dependence on (a) ripple field amplitude, (b) ripple
field frequency, and (c) number of tapes, for numerical analysis calculated at
30 cycles. Numerical calculations agree with simplified formulas for single tape
(equations (14) and (15)), and number of tapes (equation 16). The numerical
results get closer to analytical results when calculated for higher n values and
higher number of cycles.
enable researchers to understand the cause of the observed dependencies. For
instance, we found that the observed proportional increase in the time constant
for thin stacks of tapes is due to the increase of self-inductance of the main
magnetization current, rather than the increase in the stack trapped field. Ac-
tually, the parallel penetration field of one tape is more relevant than the stack
trapped field.
This article will ease the design studies of researchers regarding supercon-
ducting applications with stacks of tapes. This work also evidences the need of
high meshes for reasonably accurate modeling of time constants. Future work
will be directed to develop faster methods to model up to 100 tapes for millions
of cycles.
Acknowledgements
The authors acknowledge the financial support by the European Union's Horizon
2020 research innovation program under grant agreement No 7231119 (ASuMED
consortium), as well as from the Grant Agency of the Ministry of Education
of the Slovak Republic and the Slovak Academy of Sciences (VEGA) under
contract No. 2/0097/18.
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21
|
1806.09816 | 2 | 1806 | 2018-10-22T14:16:55 | Spin properties of NV centers in high-pressure, high-temperature grown diamond | [
"physics.app-ph"
] | The sensitivity of magnetic and electric field sensors based on nitrogen-vacancy (NV) center in diamond strongly depends on the available concentration of NV and their coherence properties. Achieving high coherence times simultaneously with high concentration is a challenging experimental task. Here, we demonstrate that by using a high-pressure, high-temperature growing technique, one can achieve nearly maximally possible effective coherence T2* times, limited only by carbon nuclear spins at low nitrogen concentrations or nitrogen electron spin at high nitrogen concentrations. Hahn-echo T2 coherence times were also investigated and found to demonstrate reasonable values. Thus, the high-pressure, high-temperature technique is a strong contender to the popular chemical vapor deposition method in the development of high-sensitivity, diamond-based sensors. | physics.app-ph | physics | Spin properties of NV centers in high-
pressure, high-temperature grown
diamond
О. R. Rubinas1,2,3, V. V. Vorobyov2,3, V. V. Soshenko2,3, S. V. Bolshedvorskii2,3, V. N. Sorokin2,3, A.
N. Smolyaninov3, V. G. Vins4, A. P. Yelisseyev5, A. V. Akimov2,3,6
1Moscow Institute of Physics and Technology, Institutskiy pereulok 9, Dolgoprudniy, Moscow
Region, Russia
2P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Leninskiy Prospect
53, Moscow, Russia
3LLS Sensor Spin Technologies, Nobelev Streeet 9, Moscow, Russia
4LLS Velman, Novosibirsk, Russia
5 Sobolev Institute of Geology and Mineralogy SB RAS, Prospekt Akademika Koptyuga 3,
6Texas A&M University, 4242 TAMU, College Station, USA
Novosibirsk, Russia
Abstract
The sensitivity of magnetic and electric field sensors based on nitrogen-vacancy (NV) center in
diamond strongly depends on the available concentration of NV and their coherence properties.
Achieving high coherence times simultaneously with high concentration is a challenging
experimental task. Here, we demonstrate that by using a temperature gradient method of high-
pressure, high-temperature growing technique, one can achieve nearly maximally possible
dephasing
times, limited only by carbon nuclear spins at low nitrogen concentrations or
nitrogen electron spin at high nitrogen concentrations. Hahn-echo
coherence times were also
investigated and found to demonstrate reasonable values. Thus, the high-pressure, high-
temperature technique is a strong contender to the popular chemical vapor deposition method
in the development of high-sensitivity, diamond-based sensors.
Introduction
Nitrogen vacancy (NV) centers in diamond are prospective solid-state systems for quantum
communication and quantum computing technology [1]. Their long coherence time at room
temperature makes them an interesting object for quantum information processing [2] and
quantum communications applications [3]. In addition, NV centers are very attractive for
metrological and biological applications. More specifically, NV centers could be used as sensitive
elements for biocompatible thermometry [4] and magnetometry [5], high-resolution magnetic
imaging [6] and nuclear magnetic resonance (NMR) imaging [7]. Alternatively, ensembles of NV
centers could be used for implementation of ultrasensitive sensors of magnetic and electric
fields [8] or strain [9].
For sensors based on NV centers in diamond, sensitivity depends on both the number of NV
centers involved and on their coherence time. Unfortunately, in general, a high concentration of
NV center in sample led to a short coherence time and therefore, in large enough concentrations,
1
*2T2T sensitivity often does not improve with concentration [10]. Finding the optimal balance between
concentration and coherence time of NV centers requires careful optimization of diamond
growing and post-processing procedures. In this work, we demonstrate that properly post-
processed diamond grown by the high-pressure, high-temperature (HPHT) method, could
demonstrate coherence time limited by either interaction with 13C at a low concentration of
centers in the case
nitrogen [11], or by interaction with nitrogen electron spins of so-called
of large nitrogen concentrations [12,13].
Figure 1 A) Schematic of the experimental setup. AOM -- acousto optic modulator, DAC -- data
acquisition card, PC -- personal computer, MW -- microwave source, Amp -- microwave
amplifier, APD -- avalanche photodiode. B) Schematic of NV center energy levels. Dotted lines
illustrate the non-radiative decay channel responsible for spin polarization. C) Pulse sequence
used in the experiment. Top to bottom: Rabi, Ramsey, and Hahn-Echo sequences.
Coherence properties of diamond plates
Most of the applications of the NV color center in diamond are based on the measurement of so-
called optically detected magnetic resonance (ODMR). In particular, in the case of DC
magnetometry and thermometry, the microwave frequency of this resonance is the subject of
2
1p measurement. Therefore, the width of this resonance, or, equivalently, its dephasing time
, is
the crucial parameter defining the device's sensitivity.
Several factors significantly affect the coherence properties of NV centers. First, the linewidth of
the ODMR resonance in ensemble of NV centers strongly depends on the strain gradient in the
diamond plate and its fluctuations [14]. Correspondingly, temperature fluctuations lead to the
strain gradient fluctuations or other fluctuations of phonon coupling and could affect the
electron coherence time of NV center via zero field splitting
for electron spin. In
the case of nitrogen-enriched diamond, the strain is determined by the interstitial nitrogen in the
crystal structure, dislocations and inclusions [15]. The next factors affecting the width of the
ODMR resonance are its interaction with
diamonds with a natural abundance of carbon [16], and
having nuclear spin and being normally present in
defects that have electron spin on
effect represents a fundamental limitation for coherence time
donor nitrogen [12,13]. The
that cannot be overcame unless isotopically pure diamond is used [11]. The influence of defects
on coherence dominates at high nitrogen concentrations and strongly depends on nitrogen-to-
NV conversion efficiency. At extremely high
concentrations (over 50 ppm), interaction of
with each other may become important, as well [17,18].
Dephasing time
is not uniquely defined and can be measured in different ways: by measuring
the coherence decay rate in Ramsey sequence; by measuring the decay of Rabi oscillations; or by
approximating the width of the ODMR resonance to zero power. Each method has advantages
and disadvantages, as well as different sensitivity to the various systematics. The Ramsey
sequence is quite sensitive to the hyperfine structure of NV center, causing beating in the Ramsey
signal that is difficult to distinguish from decoherence. As a result, dephasing time measured by
this method depends on the power of the microwaves used to excite the ground state
transition [19]. At high enough microwave power, however, the power broadening caused by
MW field uniformly excites all 3 hyperfine components of the ground state allowing to measure
dephasing time
. Rabi oscillations are easier to interpret but may give a longer dephasing time
than one corresponding to the width of ODMR resonance [20]. We will call dephasing time
measure by this method "effective coherence time". Direct measurement of the pulsed ODMR
linewidth
is also possible but, since linewidth is power broadened it requires set of
measurement at different powers followed by fit, which find value at zero power. This method is
rather time consuming therefore in our measurements we will use a Ramsey sequence coherence
time as the indicator for sensor sensitivity.
In the case of AC magnetometry, sensitivity of the magnetometer could be significantly improved
using the so-called Hahn-Echo technique (Figure 1C). While the Hahn-Echo technique partially
removes the effect of the stray magnetic field created by diamond impurities, it is far from
perfect [12]. Further improvement of coherence time could be reached with dynamical
decoupling techniques that allow elongate
to values, eventually approaching population
decay time
[21].
3
*2T.(cid:160)287GHzD13C1p13CNVNV*2T*2T**221T2T1T Nitrogen-related defects naturally accompany NV centers, but the ratio between
,
,
, etc.
and NV could vary. In most cases, only a small percentage of nitrogen forms NV centers, while
the rest form
centers (three nitrogen atoms surrounding a vacancy) [22],
(the
paramagnetic nitrogen-vacancy complex) color centers,
(the spin containing s = 1/2 donor
nitrogen atom),
and interstitial nitrogen defects
, are usually unwanted for sensing
applications due to the reasons described above [15]. Thus, a high concentration of nitrogen in
the diamond leads to a high concentration of defects that affect the coherence of the NV center.
Since
and
times are ultimately limited by nitrogen concentration, it is important to
maximize the yield of
yield is irradiation of
diamond with electrons and subsequent annealing [23,24]. The first step creates additional
centers. A popular way of increasing
vacancies necessary for the formation of
centers, but also generates a lot of interstitial
carbon and nitrogen atoms, which could be source of strain. These interstitial carbon atoms
mostly vanish after annealing at
temperature [25,26] and vacancies not captured by
nitrogen also disappear at
[27]. At temperatures above
, the defects of interstitial
nitrogen atoms become mobile, thus additionally reducing strain.
color centers disappear at
temperatures around
[15]. Further increases in temperature help remove other defects
in vacuum, diamond converts to graphite [15], which sets an upper
in diamond, but at
limit on possible annealing temperatures. In principle, even higher annealing temperatures are
possible if high-pressure annealing is implemented [15]. The duration of annealing is typically 2-
3 hours and longer times do not provide a higher yield of
reduce strain and remove unwanted defects [28].
, while they might help further
Results
Figure 2 A,B) Examples of Rabi oscillation for various diamond plates. Blue line stands for
experimental data; solid red line for fit; red dashed line illustrates fit of
decay time.
4
NiN1p3N0NV1pNNi2T*2TNVNVNV450C600C1200CN1400C1600CNV*2RabyT C,D) Examples of measurement of
decay time by Ramsey sequence. Blue line stands
for experimental data; solid red line for fit. E,F) Examples of T2 coherence time for various
diamond plates. The red solid line stands for fit. Red dashed line corresponds to envelope. The
index in the bottom right corner is the plate number; see Table 1 for details.
For measurement of the coherence properties of the diamond plates grown, we used a home-
built confocal microscope [29] (Figure 1A). Control of the spin state was carried out using a
microwave antenna [30] and a permanent magnetic field was applied to split the ODMR
resonance to address well-defined microwave transitions between electronic spin levels
and .
. in the ground
level (see Figure 1B and Methods). Coherence time was measured
by fitting echo signal using the Hahn echo sequence (Figure 1C); the effective coherence time
and
was obtained using the decay time of optical Rabi oscillations between the levels
(Figure 2A), and dephasing time was measured by Ramsey sequence (see Methods for
the details) at high microwave powers (Figure 2C).
We started our studies with a relatively high concentration of nitrogen introduced on growing
stage 100 ppm. Two plates with NVs concentrations were studied: 11.6 and 14.6 ppm. In both
was moderate and equal to 3.7 and 3.2 µs, respectively (see
cases, measured coherence time
Figure 2E and Methods). Nevertheless, due to a very high concentration of NV centers, the
potential sensitivity of magnetometer utilizing these plates could be quite high (see below). The
number of NV centers in plates with high content was estimated using the low temperature
absorption spectrum (see Methods). Additionally, the plate with a slightly lower nitrogen
concentration had a higher decoherence times for both
and
(see Table 1). This observation
is consistent with earlier works attributing
to the influence of the electron spin of nitrogen
(for example, one
or
centers) [12,13].
A second group of diamond plates with a lower initial nitrogen content (below 10 ppm) was
produced. All samples were irradiated with electrons and annealed at a temperature of 800 C
or 1400 C (see Table 1). All produced samples were measured the same way as the first run (see
Figure 2B,D,F). The method of measuring ZPL in absorption spectrum is not suitable for
at concentrations below 10 ppm; therefore, all plates in the second group were
determining
normalized to the plates in the first group using the slope of the saturation curves (see Figure 3A,
Methods).
5
*2RamseyT0sm1sm3A1sm0sm2T*2T2T*2TNV1pNV
Figure 3 A) Saturation curves for concentration measurement. Solid curve
where 𝑎, 𝑏 are fitting parameters. B) Splitting of the ODMR signal due to strain in the diamond
plate. The red line represents the fit. C) Dependence of
on strain measured in the diamond
plates. The solid line represents linear fit. D) ODMR spectra for sample 4a with clearly resolved
hyperfine structure. The red line represents the fit with 3 Lorentzian curves.
While annealing considerably relieves the strain in the samples, it does not remove it completely.
The strain (perpendicular to the NV axis strain component) could be estimated using the splitting
of the spectral lines at zero magnetic field [26,31] (see Figure 3B). The fit of the line splitting was
performed using a model of strain and magnetic field dependent ODMR spectra, obtained
from [31]. It was found that the strain component strongly correlates with dephasing
time,
demonstrating dependence (see Figure 3C):
.
(1)
This is not surprising since strain is known to affect broadening of the ODMR line (
) [14].
Besides the strain component strongly correlates with coherence time
, demonstrating
dependence:
.
(2)
We found, that there is no direct correlation of the NV concentration with
. This could be
understood as following: the
time depends strongly on all paramagnetic impurities in the
sample. For example, different regimes of electron irradiation lead to various concentration of
6
(cid:160)fxaxxb*2T*2T*.,/08921RamseyTE*2T2T/321TE2T2T paramagnetic impurities. Hence with less electron doses of
in almost twice better
for sample 4ab resulting
time comparing to 2a plate, despite their NV concentration almost
equal. At the same time, for plates 3a and sd2, with equal concentration of NVs and equal dose
of irradiation, the
time are similar.
Figure 4 Coherence time
(A) and
(B) versus NV concentration for various plates,
including taken from [11,17,32 -- 34]. Diagonal grey lines correspond to lines
. Lines are spaced with 10 times improvement in the
. The blue dot-dash line stands
limit; the red dashed line for
for
limit. C -- efficiency of the diamond plates in terms of
DC sensitivity in case of fixed excitation power. Maximum sensitivity is in the origin of the
coordinate system. Inset: coefficient k measurement scheme. 1 -- incoming pump beam, 2 --
reflected pump beam, 3 -- transmitted pump beam, 4 -- parabolic concentrator, 5 -- long-pass
filter with cutoff at 650 nm, 6 -- notch filter for pump (532 nm) beam, 7 -- photodetector. D --
Efficiency of the diamond plates in case of fixed excitation power in terms of AC
magnetometry
The best value of coherence time
was achieved on the sample with a nitrogen
concentration of about 1 ppm; the plate was irradiated with dose
and annealed at
1600 C (sample 3a2). The best dephasing time was achieved on different plate, 4ad, which
therefore demonstrated clearly resolved, hyperfine components (Figure 3D). In order to achieve
the smallest possible width for Figure 3D, a pulsed ODMR sequence was used. To minimize the
7
172610cm2T2T*2RamseyT2T2NVTnconst2NVTn1p13C2250 μsT182210cm width
pulse duration was kept large, larger than dephasing time, this way minimizing power
broadening. Smaller power nevertheless leads to some decrease of the contrast achieved
(approximately
for pulse length used). Furthermore, the full contrast is divided between 3
possible hyperfine states, and thus, only contrast of
was achieved.
Table 1 Comparison of coherence times and concentration of NV centers for various samples
studied.
49
50
2а
3а1
3a2
Sd2
4ad
4ab
, ppm
11.6±1.7
14.6±2.2
0.06±0.0
3
0.24±0.0
2
0.16
±0.02
0.75±0.2
0.54±0.0
2
3.07±0.0
4
,
,°С
1.5
800
2
2
2
2
2
0.6
0.6
800
800
1400
1600
1400
800
800
, µs
3.2 ± 0.6
3.7 ± 0.3
57 ± 4
167 ± 20 249 ± 35 97 ± 7
, µs
, µs
0.88 ±
0.14
0.28 ±
0.05
0.80 ±
0.08
0.25 ±
0.05
8.04 ±
0.99
0.46 ±
0.05
4.80 ±
0.65
0.46 ±
0.06
3.91 ±
0.8
0.55 ±
0.09
, MHz
,%
, ppm
,%
, , %
2 ± 0.2
2.4 ±0.15
1 ± .1
0.6 ± 0.1 0.9 ± 0.1
0.4 ± 0.05 0.6 ±0.06
0.01 ±
0.001
0.047 ±
0.002
0.065 ±
0.002
92±23
93±23
<10
10
>95
12
>95
4
40
<10
1
40
<10
1
50
5.50 ±
1.60
0.56 ±
0.06
0.9 ±
0.04
0.15 ±
0.02
<10
2
70
58 ± 8
7.02 ±
0.95
0.75 ±
0.07
0.78 ±
0.06
0.18 ±
0.01
<10
8
50
35 ± 2
2.24 ±
0.40
0.43 ±
0.05
1.2 ±
0.04
0.18
±0.01
<10
8
50
The results of all measurements are summarized in Table 1. Each sample was examined in
which was estimated from frequency of ODMR resonance using
magnetic field
following simple formula:
, where
is frequency of the ODMR
resonance. The fraction of
fluorescence was estimated by fitting overall emission spectrum
in the range 580-700 nm with combination of
and
spectra.
To better understand the potential of HPHT plates in terms of their application in a
magnetometer, we also summarized our data in Figure 4. Here, key parameters such as nitrogen
concentration and coherence time are plotted. The sensitivity
to DC magnetic field to the first
approximation [5] for single NV center is:
Which for ensemble of NV center will lead to sensitivity per squire root volume
:
,
(3)
(4)
8
/1e.009CNVnirradiationv18210cmannealingt2T*2RabiT*2RamseyTEkNnCNVI..86502 GB/./2870 MНz28MНzGffNVNV0NV*2BgCTDCV*~21DCVNVnTC Here
is the contrast in spin dependent optical signal,
-- dephasing time,
concentration of active NV centers,
-- NV center electronic spin gyromagnetic factor,
--
--
Bohr magneton and
-- reduced Plank constant. Thus, the only three parameters affecting
sensitivity are contrast
, coherence time
and
.
Accordingly, for AC field [5] :
and
,.
.
(5)
(6)
To understand potential of the plates measured for magnetometry, we compared our samples
in terms of coherence time and concentration of NV centers, using
,
as the
graph axes for Figure 4A, and
,
for Figure 4B. Thus, Figure 4 helps to see the
potential of different diamond plates under study. The way it is plotted maximum sensitivity
(minimal possible to measure field) is at the origin of the coordinate system. It is clear from the
picture, that both plates 49 and 50 have the best combined concentration and coherence
properties. Though coherence time for this plates is moderate, (
and
correspondingly, see Figure 2) high concentration of NV centers in this samples (
and
, see Table 1) made this samples quite competitive not only among samples
under study, but also other samples from the literature, also indicated on the graph.
To understand the limiting factors affecting coherence properties on the NV ensembles, we
analyzed behavior of the
parameter from sample to sample. As can be seen in
Figure 4A, in the DC magnetometer case
of the magnetometer already saturates at around
1 ppm of
coherence time and is likely due to the increase of
concentration. Further increase of the concentration proportionally decreases
centers' concentration. This limit in
principle could be further reduced by increasing conversion efficiency of nitrogen to
. At low
nitrogen concentrations, coherence time seems to approach the limit caused by the presence of
observed by the other groups [11]. Thus, flattening of the Figure 4A at low concentration is
quite expected and only could be overcome using isotopically pure diamonds.
In the case of AC magnetometer, similar behavior could be observed (Figure 4B). High nitrogen
concentrations in the case of CVD plates was shown in a paper [11] to have limit for coherence
time of
centers. For the plates we
is the concentration of
, where
examined, the maximum concentration of
centers measured by the infrared spectroscopy
method reached
ppm. For these plates, the coherence time measured was
9
C*2TNVngBC*2TNVn2BgCT~21ACVNVnTC/1NVn*/21T/1NVn/21T..s3206 ..s3703 ..ppm11617 ..ppm14622 *21NVTnNV1pNV13C(cid:160)/2165 μsppmNTnNn1p1p6817..s3206 and
which is, slightly better than the
limit [11]. While there is slight
difference, within 2 these results are consistent. A similar difference was observed in other
work [35]. Another important point is that plates 4ab and sd2 win in sensitivity compared to 49
and 50. This is nevertheless only true if sensitivity per unit volume is the figure of merit.
In practical terms, sensitivity of the magnetometer is not limited much by the concentration of
color centers, but rather by the fluorescence these color centers produce. Unfortunately, NV--
color centers are not the only absorbers in the diamond; therefore, the number of emitted
photons per pump photon
is far from unity, even with 100% collection. To characterize the
coefficient
, we built a test setup in which both reflected and transmitted pump beam intensity
were measured, thus enabling an estimation of the absorbed pump power. The diamond was
glued to a parabolic concentrator output connected to the filters and a photodetector measuring
the power of the emission of NV centers (see Figure 4C inset). The efficiency of such an assembly
was estimated at approximately 6% (see Methods). The results are summarized in Table 1.
Surprisingly, plates with larger NV concentrations also have a larger
coefficient, evidence that
at low NV concentrations absorption in the samples was not limited by the NV centers. Even at
high concentrations, with overall collection of only 0.6% (about 9.7% assuming perfect
collection), this coefficient cannot be explained by the assumption that NV centers are the only
absorbers, since NV quantum efficiency was measured at over 0.7 [36]. CVD plates demonstrate
quite similar results [32]. This fact is not fully understood and requires further investigation.
Additionally, the measured ODMR contrast in plates with higher concentrations tend to be also
larger (see Table 1). For plates 49 and 50 the contrast reaches nearly maximum possible value
for single-NV orientation [37]. While for the plate 4ab/4ad contrast is also high, other low
nitrogen concentration plates demonstrate quite low contrast which even further reduces
possible sensitivity of the magnetometer.
Currently the most sensitive volume-based magnetometers consume few Watts of optical
power [32,38] which is already quite challenging to handle in the rather small diamond plate;
therefore, it is reasonable to compare the possible sensitivity of magnetometers per root power.
Assuming that optical power could be distributed over the sample in such a way that it would be
fully absorbed [32] , one could obtain from (4) the following dependence for total magnetic
sensitivity on incident optical power
:
(7)
where
-- number of detected photons per single NV center per single measurement,
--
is the volume of the sample under laser radiation. Here we
number of active NV centers, and
neglect service time to not limit plate performance by the specific setup and assume
measurement time to be equal to the dephasing time. Similar formula could be derived for
. Following simple estimation (7) we will focus on only three main parameters affecting sensitivity
per root power are contrast
, coherence time
and coefficient
.
10
..s3703 ..246skkklaserP**2211DCFullNVlaserVCNTCkPTNVNVACFullC*2Tpowerk From Figure 4C,D one could see that the most suitable plate for a magnetometer seems to be
sample №50. While in case of DC magnetometry low concentration plate on average lose in
sensitivity per given power to the high-density ones, for AC magnetometry plate 4ad is quite
competitive with high density ones, but have addition advantage of having narrow resolved
hyperfine components. This conclusion indicates the very high potential of high-pressure high
temperature growing method from point of view of diamond magnetometry making it quite
competitive with commonly used CVD method.
Conclusion
We demonstrated that diamond plates grown by the HPHT method have dephasing time
and
limited by unavoidable impurities such as
or
centers.
The low strain of plates, remarkably high contrast to the ODMR signal were accompanied by
paramagnetic impurities at high
coherence properties, naturally limited by presented
nitrogen concentration limit (sample # 49) and
nuclear spin impurities for low nitrogen
concentration (sample # 4a dark), making HPHT diamond plates attractive candidates for the
realization of ensemble-based sensors. Depending on application, either a long coherence time
and spectral resolution of nuclear sidebands of ODMR signal or the best product of coherence
time and concentration provided reasonable
may be desired. For example, recently
suggested rotation measurement using nitrogen nuclear spin in NV center may strongly benefit
from resolved hyperfine component. Indeed, spectral resolution of hyperfine components will
obviously allow determining the nuclear spin states in NV center ensembles thus making
measurement based on nuclear spin state efficient.
The HPHT method offers both options either with long limited by interaction with
coherence time at low concentrations or
limited high-concentration plates for high-sensitivity
applications.
Methods
Diamond crystal growth
To grow and post process our samples, we used the following recipe. An HPHT multi-ton press
was used, capable of producing pressure of about 5 GPa at a temperature of 1500°С. Diamond
crystals were grown using the temperature gradient method in a Fe-Co-C system. The
temperature gradient method makes it possible to create conditions for the stable growth of
diamond single crystals on a specially introduced seed. A temperature gradient is intentionally
created in the reaction zone of the high-pressure cell. The source of carbon (diamond or graphite)
is placed in the region with a higher temperature, and the seed crystals of the diamond, with a
lower temperature. A carbon source at a higher temperature dissolves in the melted metal, and
carbon diffuses through the melted metal and crystallizes on the seed crystals of the diamond at
a lower temperature [15].
11
*2T13C1p1p13C*2T13C2T1p In this method, the minimum rates of growth (about 10−5 − 10−6cm/s) were realized. As a
result, the crystals had a perfect crystal structure with a minimum content of macro- and
microdefects and contained mostly nitrogen-containing impurities. Such a diamond of I b type
grown by this method can contain from 1 to 100 ppm of nitrogen predominately in the form of
center or donor nitrogen. The concentration of donor nitrogen was determined by IR
spectroscopy. The main absorption peak is located at 1130 cm-1, and is associated with the
resonance oscillation of the N-C bond. The IR absorption spectra in our samples were recorded
due
on an "Infralum FT-801" spectrophotometer (see Figure 5A). The absorption coefficient
to donor nitrogen was determined with respect to the intrinsic lattice absorption of the diamond.
The concentrations of donor nitrogen were calculated using the formula [15,39]:
(8)
Other important defects are
absorption line using following formula [15]:
(see below),
, which could be found from 1332 cm-1
And interstitial nitrogen, concentration of which could be found as:
(9)
(10)
Sum of all these color center gives full concentration of nitrogen in the sample. This color centers,
nevertheless are just most common, but not all nitrogen-related centers. Therefore overall error
on nitrogen concentration was estimated by measuring same sample before and after annealing
at 800 C, which given discrepancy up to 25% and been taken as our error bar.
Figure 5 A -- IR spectra of the diamond plate 49, B -- low temperature spectra of the sample
49
Processing of diamond plates
In the next stage, the crystals were irradiated on a linear accelerator by electrons with an energy
of 3 MeV and doses from 1017 to 1018 сm−2. This led to the generation of isolated vacancies in
the crystal structure of the diamond in neutral and negative charge states, with a total
12
1pC1ppm252pCNNVN.1332ppm551NN..1450ppm3006inN concentration, depending on the irradiation dose, from 5 to 9 ppm [15]. The subsequent
annealing of diamonds at
defects.
, due to the mobility of vacancies, leads to the formation of NV
If necessary, additional annealing is performed, the most useful and effective of which occurs at
for 24 hours. Such annealing parameters are the most optimal: on the one hand, the
thermo-diffusion of atoms of the donor nitrogen with the formation of an A-defect: pairs of
nitrogen atoms at neighboring lattice sites, is not yet activated; and on the other hand, at such
temperatures, Ni and
of donor nitrogen and NV defects.
defects are already burned out and the lattice retains only the atoms
After all these procedures, the {111} orientation plates are cut from the single crystals and
uniformly colored regions are selected on the cut plates, with regions with a uniform
concentration of NV defects belonging to one crystal growth sector. Studied diamond plates were
then made from them.
Measurement of the concentration of NV centers in plates
The concentration of donor nitrogen in the plates was measured from the intensity of the
infrared absorption peaks before irradiation with electrons. After irradiation and annealing, the
spectroscopy was carried out again. This also made it possible to estimate the concentration of
defects in the plates. The concentration of NV centers in the first two plates was calculated
by the formula [39]:
,
(11)
(12)
where
is concentration of NV centers in ppm and
-- integral intensity of the
zero-phonon line at 80 K (in the absorption spectra, see Figure 5B). Such a method is applicable
only to sufficiently high concentrations of defects in a crystal. Therefore, the second group of
plates with low concentrations was measured by another method and normalized to the
measured concentration of the first plates. Using confocal microscope saturation curves of the
NV center ensembles were measured (see Figure 3A). The concentration of
centers was
estimated via measuring the slope of the saturation curve and comparing it to that of the
calibrated plates using the following formula:
(13)
where
is the angle of slope of the saturation curve that was estimated on the measured plate;
is the angle of the slope of the saturation curve that was estimated on the plate with a
known concentration;
is the concentration of NV centers in the plate with a known
13
800C1400CN1p.63700412NVppmnI*16370meVcmIEdENVppmn*(cid:160)1637meVcmI-NV_NVnormNVnormnn(cid:160)(cid:160)norm_NVnormn concentration; and
is the concentration of NV centers in the measured plate. This method
is valid as long as absorption of green laser by other defects in diamond on the length of the focal
depth is not large, which was verified separately.
Estimation of the collection efficiency with a parabolic lens concentrator
To estimate the coupling efficiency in the experiment with a parabolic lens concentrator, a ray
trace simulation was performed. The open source library LightPyCL, available from GitHub, was
used for this purpose. The NV center was simulated as a point light source placed in the middle
. In total,
of a diamond of a size
rays were simulated for a single NV center.
The ratio of the number of rays reaching the detector surface and the total emitted rays was used
to find collection efficiency. This number needs to be corrected on number of factors: first, the
exact position of the NV center will affect the result. To take this into account, 10 random points
were selected inside the diamond plate and the same procedure was repeated for all the
. This number needed to be further corrected on
emitters, thus giving
filters transmission, which in our setup for NV emission was about 95%. Finally, the transmission
of the system was estimated as 6.2%
We note that this value is order of magnitude less than it was previously reported for CPC. Indeed,
65% could be obtained directly on the exit point of the CPC, while in our setup we have an air
spacer of roughly 2.5 cm between CPC exit side and photodetector plate, which reduced the
collection efficiency dramatically due to the large divergence of exit fluorescence (total angle 90
degrees).
Measurement of coherent properties of NV ensembles in diamond
The green laser (Coherent compass 315M 100 mW) was used as the pump laser. The laser beam
was focused on an objective Olympus Plan 10X (Figure 1A) with a 1 cm long working distance,
allowing positioning of the sample on the microwave antenna. For the microwave antenna, we
used a resonant Helmholtz rings antenna, which provides a uniform but moderate magnetic field.
The diameter of the rings is about 7 mm, and the antenna has resonance at 2920 MHz with
FWHM of about 100 MHz. In addition, a constant magnetic field was provided to split the energy
levels (Figure 1B) of the NV centers and pick only one of 4 possible orientation NV center. This
was done by using a permanent magnet aligned with respect to the diamond's
crystallographic axis and was used to create a field along
axis. The NV centers' fluorescence
was collected with a homemade confocal microscope and sent on a photodetector PerkinElmer
APD (SPCM-AQRH-14-FC). We attenuated the beam with normal density filters to obtain 2-8
million photon counts on APD. National instruments PCIe-7851 FPGA card was used to produce
control pulses for optical and microwave pumping. APD counting and gating is implemented
internally in the card. Time resolution for all experiments was limited to 12.5 ns. Measurements
of coherence times were organized in the following way. The sample was placed in a constant
magnetic and alternating microwave magnetic field mostly applied perpendicular to
axis
or Z axis of the microscope. A green laser was used to bring the system to the ground state.
14
NVn.1103 mm4210.%13052000065111111111 Information about fluorescence was processed by the computer using National Instruments
Labview software.
The optical Rabi oscillations were measured by applying a microwave pulse at the frequency of
the transition from
and to the variation duration of the microwave pulse
to
(see Figure 1C). The decay of the coherence oscillations was fitted with:
.
(14)
Here, the fitting parameters were
. Where
was taken as Rabi coherence
time.
The Ramsey dephasing time
was estimated by the Ramsey sequence (see Figure 1C). The
varying parameter was the delay
fitted by:
between two
pulses. The coherence decay curve was
,
(15)
with fitting parameters
in which
was taken as Ramsey coherence time.
The coherence time
was estimated by the Hahn echo sequence [40]; see Figure 1C. The
varying parameter was the delay
by:
between
and
. The decay of echo signal was fitted
,
(16)
where
are fitting parameters and
is was taken as the Echo coherence time.
In case of low concentration of nitrogen one could observe revivals in coherence decay at large
enough magnetic fields. In our experiments the maximum magnetic field was around 86 G the
revivals were only seen for low concentration of nitrogen in the plates. In this case, following [41]
we used following fitting formula:
,
(17)
where
is empirical fitting parameter.
Strain measurements of diamond plates
To estimate the strain parameters of the diamond plates, we performed ODMR measurements
of a small ensemble of NV centers in the absence of a static magnetic field. The laboratory
magnetic field was compensated by applying a magnetic field equal and opposite in direction to
15
0sm1sm*()cos22RabiRabTifae*,,,2aRabiRbiaT*2RabiT*2RamseyT/2*co)s(22312RamseyTiiiifea*,,,2RamseyaT*2RamseyT2T/2()22Tfae,,2aT2T()cos221Tfaet the laboratory magnetic. Using the formalism given in [42], the positions of individual hyperfine
lines could be determined analytically given the value of applied strain and magnetic field. The
system is more susceptible to transverse strain than to longitudinal. In that approximation the
ODMR spectrum of single NV center could be expressed as:
,
(18)
where
is a Lorentzian function of the form
;
is the
effective energy of interaction with the strain fields (see, for example, [43] for details);
is
swept MW frequency;
is the resonance frequency;
is the linewidth of the ODMR spectrum;
is 2.87 MHz zero field splitting;
is hyperfine constant; and
is the energy of
interaction with transverse strain fields.
To account for inhomogeneous broadening, we assumed that strain is distributed with a Gaussian
distribution:
.
(19)
is an average strain field,
is the local strain field, and
where
is the width of the
distribution. The ODMR spectrum (18) was then convolved with (19). Obtained expression for
strain was numerically evaluated in Wolfram Mathematica software. Parameters of the
expression were adjusted manually to best fit inside the feature of the ODMR spectrum as most
sensitive to strain in the lattice. This approach results in good agreement with experimental data.
At some plates with low strain and ODMR linewidth, however, the outer wings of the ODMR
spectrum deviate to form the fit. This is most likely due to the presence in our plates of a natural
abundance of 13C isotopes, which give rise to additional broadening.
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19
|
1807.01634 | 3 | 1807 | 2018-07-18T21:31:42 | Nanostructured Hyperbolic Meta-Antennas Enable Arbitrary Control of Scattering vs Absorption | [
"physics.app-ph"
] | We show that meta-antennas made of a composite material displaying type II hyperbolic dispersion enable precise and controlled spectral separation of absorption and scattering processes in the visible/near-infrared frequency range. The experimental evidence is supported by a comprehensive theoretical study. We demonstrate that the physical mechanism responsible for the aforementioned effect lies in the different natures of the plasmonic modes excited within the hyperbolic meta-antennas. We prove that it is possible to have a pure scattering channel if an electric dipolar mode is induced, while a pure absorption process can be obtained if a magnetic dipole is excited. Also, by varying the geometry of the system, the relative weight of scattering and absorption can be tuned, thus enabling an arbitrary control of the decay channels. Importantly, both modes can be efficiently excited by direct coupling with the far-field radiation, even when the radiative channel (scattering) is almost totally suppressed, hence making the proposed architecture suitable for practical applications. | physics.app-ph | physics | Nanostructured Hyperbolic Meta-Antennas Enable Arbitrary Control of Scattering vs Absorption
Nicolò Maccaferri1¶, Yingqi Zhao1¶, Marzia Iarossi1,2, Tommi Isoniemi1, Antonietta Parracino1, Giuseppe
Strangi1,3,4, and Francesco De Angelis1,*
1Istituto Italiano di Tecnologia, Via Morego 30, 16163, Genova, Italy
2DIBRIS, Universita degli Studi di Genova, Via Balbi 5, 16126 Genova, Italy
3Department of Physics, Case Western Reserve University, 10600 Euclid Avenue, Cleveland, Ohio 44106, USA
4CNR-NANOTEC and Department of Physics, University of Calabria, 87036, Italy
We show that meta-antennas made of a composite material displaying type II hyperbolic dispersion
enable precise and controlled spectral separation of absorption and scattering processes in the
visible/near-infrared frequency range. The experimental evidence is supported by a comprehensive
theoretical study. We demonstrate that the physical mechanism responsible for the aforementioned
effect lies in the different natures of the plasmonic modes excited within the hyperbolic meta-antennas.
We prove that it is possible to have a pure scattering channel if an electric dipolar mode is induced,
while a pure absorption process can be obtained if a magnetic dipole is excited. Also, by varying the
geometry of the system, the relative weight of scattering and absorption can be tuned, thus enabling an
arbitrary control of the decay channels. Importantly, both modes can be efficiently excited by direct
coupling with the far-field radiation, even when the radiative channel (scattering) is almost totally
suppressed, hence making the proposed architecture suitable for practical applications.
PACS numbers: 73.20.Mf, 78.67.−n, 78.68.+m, 42.70.−a
Keywords: Hyperbolic Metamaterials, Scattering, Absorption, Plasmonic Nanostructures
I. INTRODUCTION
[9-11], wave-guiding and
lasing
Unlike
conventional optics, plasmonics
enables
unrivalled concentration of optical energy well beyond the
diffraction limit of light, leading to extremely confined and
enhanced electromagnetic fields at the nanoscale [1-7].
Besides its fundamental importance, manipulation of light at
the subwavelength level is of great interest for the prospect of
real-life applications [8], such as energy harvesting and
photovoltaics
[12],
optoelectronics [13], and biomedicine [14,15]. Along with
the ongoing efforts to synthesize novel plasmonic materials
to improve the performances of the aforementioned uses [16-
18], novel optical designs and architectures that modify the
optical power flow
through plasmonic nanostructures
represent another crucial step toward nanoscale manipulation
of light-matter interactions [19]. Plasmonic nanostructures
are known to exhibit, when coupled to light, collective
electronic oscillations, so-called localized surface plasmon
resonances (LSPRs), which determine their optical response
in the visible and near-infrared spectral range.
*Corresponding author.
[email protected]
¶Contributed equally.
One of the drawbacks of plasmonic nanostructures exhibiting
LSPRs
is the spectral overlapping of scattering and
absorption processes due to the intrinsic nature of the excited
plasmonic mode, which is actually related to the optical
properties of the constituent material. For guiding light, for
instance, it is essential that the photonic or plasmonic circuit
does not have a high absorption, while for other kind of
applications, such as photo-acoustic imaging, it is crucial that
the light is absorbed rather than scattered. To overcome these
issues, one can shift the LSPR of interest, just modifying the
geometry of the nanostructure, to reduce or increase the
weight of the absorption compared to the scattering, although
these two channels are at the same wavelength and one can
choose to have only either absorption or scattering at a same
time. An ideal solution would be an architecture and/or
material which allows in the same platform a full control of
the spectral distribution of scattering and absorption
processes. In this framework, hyperbolic metamaterials
(HMMs) [20-22] have received great attention from the
scientific community due to their unusual and unexpected
properties at optical frequencies, in particular in the near-
infrared where, for instance, they can absorb more than 90%
of the incident light [23,24]. These materials show rare
properties never observed in nature [25-27], such as negative
refraction [28-31] and resonant gain singularities [32], and
can have a huge impact on nanoscale light confinement [33],
optical cloaking [34], biosensing [35,36], nonlinear optics
[37], super resolution imaging and superlensing effects [38],
ultra-compact optical quantum circuits [39], plasmonic-based
lasing [40], highly efficient artificial optical magnetism [41],
graphene-based technologies [42], etc. When considering the
dielectric tensor, HMMs can be divided into two types: type
I has one negative component in its permittivity tensor and
two positive ones. In contrast, a type II HMM has two
negative components and one positive. In practical terms,
type II appears as a metal in one plane and as a dielectric in
the perpendicular axis, while type I is the opposite. Such
anisotropic materials can sustain propagating modes with
very large wave vectors and longer lifetime and propagation
length in comparison to classic plasmonic materials [43] and
exhibit diverging density of states [44], leading to a strong
Purcell enhancement of spontaneous radiation [45-47].
Beyond the so-called natural hyperbolic materials, it is
possible to mimic hyperbolic properties, for instance of type
II, using a periodic stack of metallic and dielectric layers [48]
that can support surface plasmons with large wave vectors
[49] and whose effective permittivities for different
polarizations have different signs [22,50].
In this work, we introduce a novel optical functionality of
HMMs, focusing on an archetypical nanostructure, namely a
cylindrically-shaped nanoantenna, made of artificial HMM of
type II composed by alternating layers of metal and a
dielectric material with a refractive index (RI) between 1.45
(such as SiO2) and 2.25 (such as TiO2). The proposed
hyperbolic meta-antennas enable the creation of well-
separated bands of either almost pure absorption or scattering
and allow a full control of the ratio between these two
channels over a broad spectral range in the visible and near-
infrared regions. We provide a detailed study, supported by
experimental evidence, where we explain the physical
mechanism underlying the aforementioned effect of spectral
separation between absorption and scattering processes. We
show that the scattering band depends on the excitation of an
electric dipolar mode, while the strong absorption band is due
to the excitation of a magnetic dipolar mode. Interestingly,
both modes can be excited by direct coupling with the
external radiation, even when the scattering channel is
practically suppressed, thus making the proposed architecture
suitable for practical applications. Furthermore, the proposed
hyperbolic meta-antennas are directional and show both
polarization and angular independence, which is an important
property if the meta-antennas are dispersed in solvents or
grown on different kind of surfaces.
II. RESULTS AND DISCUSSION
The first and most important optical property of our
system, namely the ability to display in the same platform
almost pure radiative (scattering) or non-radiative (absorption)
channels at different wavelengths and with the same intensity,
is presented in Fig. 1(a), where we plot the absorption (green
curve) and scattering (red curve) cross sections, calculated
using the finite element method (for more details see
Appendix A), of a single hyperbolic meta-antenna with a
diameter D = 200 nm, made of 5 alternating layers of gold (10
nm each) and of a dielectric material with n = 1.75 (20 nm
each) on a transparent substrate, such as glass (n = 1.5). From
now on and where not specified, the environment is considered
to bring
to be air. We decided to use these dimensions after an
optimization study (see Appendix A),
this
functionality in a specific spectral range, namely the red/near-
infrared spectral range (650-1800 nm), which useful for a
plenty of emerging light-based technologies and, more
importantly, where the constituent multilayered structure
displays hyperbolic dispersion of type II (see Appendix A). It
is worth mentioning here that, although the structure
considered in this case is made of 5 bilayers of gold and
dielectric, up to 4 bilayers we can state that our system is still
hyperbolic because there are enough bilayers to display the
hyperbolic features shown by an infinite multilayer [49, 51].
Furthermore, to better highlight the difference between our
architecture and classical plasmonic nanoantennas, we plot
also the absorption and scattering cross sections of a gold disk
(i) 50 nm thick, namely with the same amount of gold of our
meta-anetnna [Fig. 1(b)], and (ii) with the same geometrical
characteristics, namely the same diameter and thickness [Fig.
1(c)]. Also these structures are assumed to be on a glass
substrate. As it can be inferred by looking at Fig. 1(b)-(c), the
gold nanostructures display scattering and absorption at the
same wavelength. In this particular case, we can also notice
that both architectures show a strong scattering (red curves)
and a very low absorption (green curves). This is indeed the
expected optical response for plasmonic antennas with these
specific sizes and shape in this spectral range. On the contrary,
if we look at the hyperbolic meta-antenna we can see two well
separated scattering and absorption bands with the same
intensity.
FIG. 1. Scattering (red curves) and absorption (green curves) cross
section of (a) a hyperbolic meta-antenna made of 5 bilayers of metal
and dielectric (n = 1.75), (b) a classical plasmonic antenna on a glass
substrate with the same shape and amount of gold and (c) the same
shape and size. All the structures are assumed to stay on a glass
substrate.
We want now to go more deeply inside the physical
properties of our system. If one wants to control the spectral
separation between the scattering and absorption bands, it is
actually possible to do so by changing, for instance, the
thickness of the metallic or dielectric layers, the shape and
size (diameter) of the nanostructure or, in a more convenient
way, the dielectric material within our architecture. To
demonstrate that the latter possibility can indeed produce a
desired and also a significant variation of the spectral
separation between the absorption and scattering channel, we
chose three different and well-known materials: SiO2 [52],
Al2O3 [53] and TiO2 [54]. The RI of these three dielectrics
increases from an average of 1.45 (SiO2) to 2.25 (TiO2). In
650850105012501450 650850105012501450 650850105012501450020k40k60k Wavelength (nm)Cross Section (nm2)ScatteringAbsorptionHyperbolic nanopillarPlasmonic nanodiskPlasmonic nanopillar(a)(b)(c)Wavelength (nm)Wavelength (nm)ScatteringAbsorptionScatteringAbsorption Fig. 2(a) we plot the absorption and scattering cross sections
of a hyperbolic meta-antenna (D = 200 nm) on a glass
substrate made of 5 bilayers of Au (10 nm each) and these
three dielectric materials (each layer has a thickness of 20
nm). As can be inferred by Fig. 2(a), the spectral separation
between the scattering and the absorption process becomes
larger by increasing the RI of the dielectric material. A
spectral separation of 250 nm with SiO2 can be more
increased up to 580 nm by using TiO2. It is worth noticing
that the dependence of the spectral separation between
absorption and scattering channels on the value of the RI of
the dielectric material chosen is linear, as shown in the inset
in the top-panel of Fig. 2(a).
while other two absorption peaks are present at higher
wavelength, even if very much smaller in intensity. If we plot
the ratio between scattering and absorption, namely scat/abs,
and the inverse of this quantity, we can see, by looking at Fig.
2(b), that these other two absorption peaks. Moreover, it is
clear that when the absorption is maximum the scattering is
almost totally suppressed, and this is indeed a crucial property
if one wants to exploit one or the other effect in the same
platform. Moreover, it is worth mentioning here that when the
scattering and absorption cross sections are equal, namely
scat/abs = 1 (see the colored lines in Fig. 2(b)), we envision
that this system can be used also in plasmon-coupled
resonance energy transfer processes at different wavelengths
[55]. Furthermore, the three absorption bands highlighted in
Fig. 2(b) by using three different colored dots, are related to
the excitation of three different localized modes within the
meta-antenna, as shown in Fig. 2(c), in analogy with
previously reported works where similar confined modes can
be excited in a continuous multilayered film, although the
latter are guided and not localized [49].
the
is
structure,
To prove that the spectral separation between scattering
and absorption process, as well as its tuning by changing the
dielectric material within
indeed
experimentally possible, we fabricated two different samples
by keeping as reference the two extreme cases reported in Fig.
2(a), namely hyperbolic meta-antennas on silica substrates
made of 5 bilayers of Au and either SiO2 or TiO2. We used a
top-down approach based on hole mask colloidal lithography
technique [56-58], which is an affordable, highly parallel and
cm2-scale nanofabrication method (a detailed explanation of
the fabrication process can be found in Appendix B). We
controlled the average diameter to be around 200 nm as in the
numerical simulations.
FIG. 2. (a) Calculated scattering (dots) and absorption (triangles) of
a hyperbolic meta-antenna with D = 200 nm and made of 5 bilayers
of Au (10 nm each) and three different dielectric material (SiO2 –
blue curves, top-panel; Al2O3 – orange curves, middle-panel; TiO2 –
red curves, bottom-panel – 20 nm each layer) on a glass substrate.
The inset in the top-panel shows the linear dependence of the
spectral separation as a function of the RI of the dielectric layers; the
dotted line is a guide for eyes. (b) Absorption (cyan triangles) and
scattering (violet squares) contrast for the hyperbolic meta-antenna
made of 5 bilayers of Au (10 nm each) and SiO2 (20 nm each). (c)
Near-field intensity distribution of the three modes highlighted by
colored dots in Fig. 2(b).
Moreover, while the scattering peak redshifts less than 100
nm passing from n = 1.45 to n = 2.25, the absorption one
displays a redshift of more than 400 nm. If we now focus our
attention on the specific case of the Au/SiO2 hyperbolic meta-
antenna, it is clear that on the scale of the ordinate of Fig. 2(a)
only one absorption peak is clearly visible at = 1100 nm,
FIG. 3. (a) Measured transmission of hyperbolic meta-antennas on
glass (filling factor 20%) with an average diameter D = 200 nm,
made of 5 bilayers of Au (10 nm each) and two different dielectric
material (SiO2 – blue curve, top-panel; TiO2 – brown curve, bottom-
panel). (b) Calculated transmissions and absorption (green curves)
and scattering (red curves) cross sections.
60085011001350160018500246 020k40k60k020k40k60k775107513751675020k40k60k 1.51.82.12.4200300400500600 Spectral separation (nm)RIWavelength (nm)Cross Section (nm2)5xAu[10nm]/Al2O3[20nm]5xAu[10nm]/SiO2[20nm]5xAu[10nm]/TiO2[20nm]580nm335nm250nmCross Section (nm2)Cross Section (nm2)scat-contrast(a)(b)scat/absabs/scatWavelength (nm)(c)0350070035E/E02E/E02E/E02AirGlassAirGlassAirGlassE0kE0kE0kscat=absscat=absscat=absabs708090100800115015001850708090100 025k50k75k100k025k50k75k100k607590800115015001850406080100 Wavelength (nm)5xAu[10nm]/SiO2[20nm]5xAu[10nm]/TiO2[20nm](a)Wavelength (nm)Cross Section (nm2)ScatteringAbsorptionScatteringAbsorption(b)Transmission (%)350nm695nmExperimentSimulationExperimentSimulationTransmission (%)
losses, in particular at the resonance at 925 nm for the
Au/SiO2 sample and at 1095 nm for the Au/TiO2 sample.
FIG. 4. (a) Top-panel: sketch of a hyperbolic meta-antenna with D = 250 nm and made of 5 bilayers Au (10 nm each) and a dielectric material
with n = 1.5 (20 nm each) on a glass substrate (left-panel), and related scattering and absorption cross section as a function of the wavelength of
the incoming light (right-panel). Middle panel: magnetic near-field distribution at 860 nm (left panel) and at 1120 nm (right panel). The red and
green arrows indicate the direction of the current density J inside the metallic layers. Bottom panel: electric far-field distribution at 860 nm (left
panel) and at 1120 nm (right panel). (b) The same as in (a) but for a meta-antenna embedded in a homogeneous medium with n = 1.5.
We then characterized the optical properties of the fabricated
samples by measuring their transmission [Fig. 3(a)] (details
about the experimental set-up and the optical measurements
can be found in Appendix C). In Fig. 3(b) we plot the
calculated transmission, which matches almost perfectly the
experimental results, including also the calculated scattering
(red curves) and absorption (green curves) cross sections. As
it can be noticed by looking at the calculated plots, the two
transmission dips in the experimental curves can be related
either to a pure scattering process or to a pure absorption
process. It is worth noticing here that we are able to induced
experimentally two well separated decay channels by direct
coupling with the far field radiation, which is a very important
result also in view of practical applications. Furthermore, it is
clear from both the experimental and the calculated curves
that by increasing the RI of the dielectric we can increase the
separation between the absorption and scattering bands. It is
important to mention here that the spectral separation is
higher in the experimental case (350 nm and 695 nm for the
Au/SiO2-based
and Au/TiO2-based meta-antennas,
respectively) if compared to the theoretical one in Fig. 2(a),
since the experimental effective RI of the SiO2 and the TiO2
layers is a bit higher than the calculated one due to the
presence of almost 1 nm of Ti as adhesion layer between each
Au and dielectric layer. Moreover, it is also worth noticing
that the smaller intensity, compared to that shown in Fig. 2(a)
and in Fig. 3(b), of the absorption peak in both the cases
studied here can be inferred to several reasons, such as the
morphological defects of the multilayers and the presence of
the aforementioned Ti adhesion layers, as well as to
roughness, round edges, and distribution in size and shape.
All these factors can contribute to an increase of the overall
Based on this simple proof-of-concept experiment, which
proves the robustness of the model, we then used the
validated computational approach to understand the main
physical mechanisms underlying the formation of almost pure
scattering and absorption bands in our system. In Fig. 4(a) we
consider a hyperbolic meta-antenna on a glass substrate, with
D = 200 nm and made of 5 bilayers of Au (10 nm each) and
a dielectric material with n = 1.5 (20 nm each). On the top-
right panel of Fig. 4(a) scattering and absorption cross
sections as a function of the wavelength are plotted. If we
look at the magnetic near-field and at the current density J
distributions at the two resonances wavelengths (see middle-
panel Fig. 4(a)), we can clearly see a huge difference between
the two cases. While at 860 nm (scattering band resonant
peak) we have a large contribution from the top of the meta-
antenna (first two metallic layers) where the currents within
the metal has the same direction, at 1120 nm (absorption band
resonant peak) we have that between the first two metallic
layers and the last two metallic layers the currents have
opposite direction. In the first case we can observe that the
magnetic near-field is localized almost outside the meta-
antenna, giving rise to the usual far-field pattern of a
plasmonic nanoantenna due to the excitation of an electric
dipole (bottom-left panel in Fig. 4(a)). In the second case the
magnetic near-field is strongly concentrated at the center of
the antenna, and the far-field distribution is almost two orders
of magnitude lower than that at 860 nm, and this explains the
almost total suppression of scattering. Indeed, at = 1120 nm
we do not observe any scattering peak, but just a huge
absorption. This non-radiative coupling between the far-field
700900110013001500020k40k60k 700900110013001500020k40k60k Wavelength (nm)Cross Section (nm2)Wavelength (nm)Cross Section (nm2)n= 1.5n= 1ScatteringAbsorptionScatteringAbsorption1.53.50.040.080.06x10-2Efar [V/m]0.010.050.03Efar [V/m]0.010.070.04Efar [V/m]0.54.52.5Efar [V/m]H/H02.57.5H/H013.5H/H02.57.5H/H0(a)(b)AirGlassE0kAirGlassE0kE0kE0kn = 1.5n = 1.5JJJJn= 1.5= 860 nm= 1120 nm= 1100 nm= 1300 nm= 860 nm= 1120 nm= 1100 nm= 1300 nm the magnetic dipole-induced
radiation and the meta-antenna can be reconducted to the
excitation of a magnetic dipole, in analogy with previously
reported similar effects in metal-insulator-metal (MIM)
nanoantennas [59]. It is important here also to notice that the
manipulation of plasmonic modes related to electric and
magnetic dipoles has been demonstrated to be possible by
creating Fano interference between several MIM antennas
arranged in a complex fashion [60, 61]. Nevertheless, none of
the aforementioned approaches can induce a clear separation
between absorption and scattering channel, while in our case
the effect is achieved through a straightforward and clear
physical concept that avoids the need of sophisticated
engineering of the antennas. We want to stress the fact that in
our case we need just one single antenna to induce a
significant spectral separation between radiative and non-
radiative decay channels.
Finally, it is important to mention here that, to display two
well-separated bands of almost pure scattering and
absorption, it is crucial to have also an index mismatch
between the dielectric material in the hyperbolic meta-
antenna and the external environment. Due to the strong index
contrast, at
resonance
(absorption peak) the electric and magnetic fields are almost
totally localized within the meta-antenna, giving rise to strong
absorption and to negligible scattering. On the contrary, if we
assume that our system is immersed in a homogenous
medium with the same index as the dielectric material (in this
case n = 1.5, see also the sketch on the top-left panel of Fig.
4(b)), we can observe a huge increasing of the scattering at
the magnetic dipole-induced resonance (see the peak of the
red curve at 1300 nm in the top-right panel of Fig. 4(b)). In
this case we can observe that at 1300 nm the magnetic near-
field (middle-right panel of Fig. 4(b)), is still concentrated
inside the meta-antenna but there is also a not negligible
component outside it. In this case there is not a strong index
mismatch between the environment and the dielectric
composing the meta-antenna. The index matching between
the dielectric composing the nanostructure and the external
environment induces a strong quenching of the currents in the
bottom side of the meta-antenna. Indeed, we can observe a
strong far-field emission (see the bottom-right panel in Fig.
4(b)), which has the same intensity of the electric dipole
resonance-induced far-field pattern plotted in the bottom-left
panel of Fig. 4(b).
III. CONCLUSIONS
In summary we have introduced a novel functionality of
hyperbolic nanostructured metamaterials. Our proposed
architecture displays two well separated scattering and
absorption bands. This behavior is related to the excitation of
an electric and magnetic dipole, respectively, within the
nanostructure, which can be effectively excited by direct
coupling with the far field radiation, even when the radiative
channel (scattering) is almost totally suppressed, hence
making the proposed architecture suitable for practical
applications. Furthermore, we have shown that the control of
scattering and absorption channels can be achieved over a
broad spectral range also by changing the dielectric material
within the meta-antennas. Finally, the hyperbolic meta-
antennas possess both angular and polarization independent
structural integrity (see Appendix A), thus opening up new
perspectives for applications on a broad range of surfaces or
dissolved in solvents. We foresee that the concept presented
here can be generalized by exploring more complex shapes
and/or configurations (such as lattice-like configurations) to
induce additional or different modes
(plasmonic or
diffractive) beyond the dipolar modes responsible for the
effects shown in this work. The presented findings open the
pathway towards novel routes to control the decay channels
in light-matter coupling processes beyond what is offered by
current plasmon-based architectures, possibly enabling
applications spanning, for instance, from thermal emission
manipulation, theranostic nano-devices, optical trapping and
nano-manipulation, non-linear optical properties, plasmon-
enhanced molecular spectroscopy, photovoltaics and solar-
water treatments.
ACKNOWLEDGEMENTS
We acknowledge Matteo Barelli, Andrea Toma and Cristian
Ciracì for fruitful discussions.
APPENDIX A: NUMERICAL SIMULATIONS
AND THEORETICAL ANALYSIS
1. Optimization of
the hyperbolic meta-antennas
dimensions and composition
Numerical simulations have been performed using the finite
element method implemented in Comsol Multiphysics. The
RI values of gold and dielectrics have been taken from
literature [52-54, 62]. To simulate the optical properties of
hyperbolic meta-antennas we have considered a simulation
region where we specified the background electric field (a
linearly polarized plane wave), and then we calculated the
scattered field by a single meta-antenna to extract optical
parameters which are not directly measurable in our
laboratory, namely absorption and scattering cross sections.
The model computes the scattering, absorption and extinction
cross-sections of the particle on the substrate. The scattering
cross-section is defined as
𝜎𝑠𝑐𝑎𝑡 =
1
𝐼0
∬(𝒏 ∙ 𝑺) 𝑑𝑆
where 𝐼0 is the intensity of the incident light, 𝒏 is the normal
vector pointing outwards from the nanodot and 𝑺 is the
Poynting vector. The integral is taken over the closed surface
of the meta-antenna. The absorption cross section equals
𝜎𝑎𝑏𝑠 =
1
𝐼0
∭ 𝑄𝑑𝑉
where 𝑄 is the power loss density of the system and the
integral is taken over the volume of the meta-antenna. The
transmission is then calculated as
have a clear separation between scattering and absorption
bands.
𝑇 = 𝑒−
𝜎𝑒𝑥𝑡𝑓𝑡
𝑉
where 𝜎𝑒𝑥𝑡 = 𝜎𝑎𝑏𝑠 + 𝜎𝑠𝑐𝑎𝑡 is the extinction cross section, 𝑓 is
the filling factor (around 20% for the samples fabricated), and
𝑡 and 𝑉 are the thickness and the volume of the meta-antenna,
respectively.
We have performed an optimization study to find the best
configuration, in terms of layers thicknesses and meta-
antenna diameter, to maximize the spectral separation
between scattering and absorption channels.
FIG. 6. Absorption (top) and scattering (bottom) cross sections of a
hyperbolic meta-antenna on a glass substrate, made of 5 bilayers of
Au (10 nm each) and a dielectric (20 nm each) with n = 1.75 as a
function of the meta-antenna radius, which is varied from 75 nm to
200 nm.
2. Calculation of the effective dielectric constant of a
bulk HMM
The dielectric constant of a bulk HMM made of alternating
layers of Au and dielectric material with n = 1.75 was
calculated using an effective medium approximation. The
effective dielectric constant for the multilayered bulk HMM
along the two principal directions, namely the x-y plane and
z-direction, is calculated as follows [22]
𝜀𝑥,𝑦 =
𝑡𝑚𝜀𝑚 + 𝑡𝑑𝜀𝑑
𝑡𝑚 + 𝑡𝑑
𝜀𝑧 =
𝜀𝑚𝜀𝑑(𝑡𝑚 + 𝑡𝑑)
𝑡𝑑𝜀𝑚 + 𝑡𝑚𝜀𝑑
where 𝑡𝑚 and 𝑡𝑑 are the thicknesses of Au and the dieletric,
respectively, and 𝜀𝑚 is the dielectric constant of Au, while 𝜀𝑑
is a dielectric constant of the dielectric layer. In Fig. 7 we plot,
as a function of the wavelength of the incident light, the real
part of the in-plane (x, y directions, blue curve) and out-of-
plane (z direction, violet curve) components of the dielectric
tensor.
FIG. 5. (a) Absorption and (b) scattering cross sections of a
hyperbolic meta-antenna on a glass substrate, with diameter 200 nm
and made of 5 bilayers of Au and a dielectric with n = 1.75 as a
function of the dielectric thickness, which varies from 10 nm to 40
nm, for Au thicknesses varying from 10 nm to 40 nm from the top
to the bottom. The green line in Fig. 5(b) represent the spectral
position of the maximum of the absorption cross section.
In Fig. 5(a) we plot the absorption cross section for 4 different
cases: from the top to the bottom we plot the absorption cross
section for Au thickness ranging from 10 nm to 40 nm, as a
function of the wavelength of the incoming light and of the
dielectric layer (n = 1.75) thickness, whose range is
comprised between 10 nm and 40 nm. In Fig. 5(b) we plot the
scattering cross section, indicating with a green line the
position of the absorption band resonant peak. The best
configuration has been found to be that where the gold
thickness is 10 nm and the dielectric thickness is 20 nm.
We have also studied what is the dependence of scattering
and absorption cross sections on the meta-antenna diameter.
In Fig. 6 we plot the absorption (top-panel) and scattering
(bottom-panel) cross sections as a function of the wavelength
of the incoming radiation and of the antenna radius. Au and
dielectric (n = 1.75) are assumed to have a thickness of 10 nm
and 20 nm, respectively. For diameters below 300 nm we
100k70k40k10kAbsorption CS Scattering CS tAu=10nmtAu=20nmtAu=30nmtAu=40nmWavelength (nm)Thickness dielectric (nm)Thickness dielectric (nm)180014001000600CS (nm2)CS (nm2)(a)(b)180014001000600180014001000600180014001000600100k70k40k10k100k70k40k10k100k70k40k10k100k70k40k10k180014001000600180014001000600180014001000600180014001000600100k70k40k10k100k70k40k10k100k70k40k10k15202530351520253035Wavelength (nm)Absorption CS Scattering CS 70k50k30kWavelength (nm)CS (nm2)10k70k50k30k10k16001400100060080012001600140010006008001200Radius (m)80100120140160Wavelength (nm)18001800 namely an almost pure scattering and an almost pure
absorption bands with the same efficiency/intensity, is the
configuration with 5 bilayers, that is the architecture
presented in this work. If we have 6 or more bilayers we start
to see a second peak in the scattering cross section at the same
wavelength of the magnetic dipole-induced absorption peak,
giving rise to a quenching of the absorption contrast abs/scat,
which becomes very much smaller than the scattering
contrast scat/abs for nbi-layers > 5. The second scattering band
appearing already in the 6 bilayers case reaches almost the
same intensity of the magnetic dipole-induced absorption
band once we reach the 8 bilayers case, resembling the
response of a 5-bilayers meta-antenna in an index matching
case shown in Fig. 4(b). Regarding the main scattering peak
present in all the systems considered, from the classical planar
plasmonic antenna up to the 8 bilayers hyperbolic meta-
antenna, the far-field pattern is the one we expect from a
dipolar antenna, as it is actually related to the excitation of an
electric dipolar mode. Finally, for completeness, we plot also
the far-field distributions of the 6, 7 and 8 bilayers cases at
the hyperbolic absorption resonant wavelength, viz. where
abs/scat is maximum [Fig. 10]. In this case we can observe a
strong forward and backward scattering, in contract with the
more uniform far-field distribution observed at the electric
dipole-induced scattering peak.
4. Study of the angular and polarization dependence of
the optical properties of the hyperbolic meta-antennas
It is worth mentioning that the optical response of our
structure is also strongly independent on both the polarization
and the impinging direction of the incident light. In Fig. 11
we plot the absorption and scattering cross sections (top and
bottom panels, respectively) of a hyperbolic meta-antenna
with D = 200 nm and 5 bilayers of gold and a dielectric with
n = 1.75 (each bilayer is composed by 10 nm and 20 nm of
material, respectively) as a function of both the wavelength
of the incident light and the angle of incidence, for two types
of incident waves. More in detail, we consider two linearly
polarized plane waves – a transverse magnetic (TM or p-
polarized) and a transverse electric (TE or s-polarized)
incident field. Up to 70° both the absorption and scattering
processes show neither any angular dependence nor any
polarization dependence a part for a decreasing of the
intensity. Above 60° of incidence we start to see a drop of the
scattering and absorption intensities, since the in-plane
dipolar LSPR of the metal disks in the meta-antenna are
excited with lower efficiency, as the in-plane component of
the incident electric field goes to 0. If one wants to take into
account also angles larger than 60° or consider, even more in
general, a random orientation of the meta-antenna in a
homogenous medium, it can be shown that the overall
response is that shown for a meta-antenna on a glass substrate
with a clear distinction between the scattering and absorption
contrast [Fig. 12].
FIG. 7. Real part of the dielectric function of a HMM of type II made
of multilayers of Au (10 nm each) and of a dielectric material (20
nm each) with n = 1.75 calculated using the effective medium theory
(z-direction component – violet curve; x-y plane component – blue
curve.
3. Dependence of the optical properties of the hyperbolic
meta-antennas on the number of the metal/dielectric
layers
A desired control of both scat/abs and abs/scat is possible by
changing the number of the Au/dielectric layers in the meta-
antenna. We studied also how the near- and far-field optical
distributions change as a function of such a number of layers.
In the middle-panel of Fig. 8 we plot the calculated absorption
cross section for 8 cases, starting from one bilayer (plasmonic
gold nanoantenna 10 nm thick with a capping layer of
dielectric with n = 1.75 and 20 nm thick) up to 8 bilayers. All
the antennas have a diameter of 200 nm are on glass substrate.
As it can be inferred from both the near-field plots (top-panel
of Fig. 8), which were calculated at the resonant wavelengths,
i.e. where the absorption is maximum, and the absorption
curves, up to 3 bilayers – antenna, MIM and metal-insulator-
metal-insulator-metal (MIMIM) structures – we do not
observe any absorption peak in addition to the one due to the
electric dipole-induced LSPR excited
the
structure. Starting from the 4 bilayers case we can observe at
larger wavelengths (around 1300 nm) the rising of an almost
pure absorption band due to the excitation of a magnetic
dipole within the meta-antenna. It is important noticing that
at this wavelength (i) a strong near-field confinement and
intensity enhancement (> 300, a factor 3 with respect to the
MIMIM case) is observed at the wavelength where the
magnetic dipole-induced absorption band is maximum and
(ii) the main component of the electric field is is Ez (parallel
to the wave-vector k) [Fig. 9]. Moreover, as it can be inferred
from the central cases of 4, 5 and 6 bilayers, we can actually
throughout
control either the spectral position where scat = abs or the
relative intensity between the two maxima of scat/abs and
abs/scat by changing the number of layers. We can pass from
a situation where abs/scat is higher than scat/abs (4 bilayers
case) to a case where they are equal (5 bilayers case), to
finally arrive to a case where abs/scat < scat/abs. As can be
seen from Fig. 8, the best configuration to obtain two distinct
and totally de-coupled scattering and absorption bands,
x,y planez-directionElliptical regionHyperbolic region4507501050135016501950-60-50-40-30-20-1001020 Wavelength (nm) Re() FIG. 8. Top-panel: Near-field intensity distribution of a hyperbolic meta-antenna on a glass substrate in air at normal incidence and at the resonant
wavelength of the magnetic dipole-induced absorption band. Middle-panel: absorption (top), scattering (middle) and A and S (bottom panel)
evolution upon variation of the number of bilayers. Bottom-panel: far-field distribution at the resonant wavelength of the electric dipole-induced
scattering band.
FIG. 9. Near-field intensity distribution of the z- (top panel) and x-
component (bottom panel) normalized to the incident plane wave
intensity E0 for the cases 4-8 bilayers of Fig. 8.
FIG. 10. Far-field distribution at the wavelength of the magnetic
dipole-induced absorption peak for the cases of 6, 7 and 8 bilayers
of Fig. 8.
FIG. 11. Top-panels: absorption cross section for TE (left-panel) and
TM (right-panel) polarization of the incident light as function of the
wavelength and of the angle of incidence. Bottom-panels: scattering
cross section for TE (left-panel) and TM (right-panel) polarization
of the incident light as function of the wavelength and of the angle
of incidence.
The polarization/angular independence of our architecture is
of great significance since it means that the special optical
property of the system reported here does not depend on the
orientation of the meta-antenna. This fact implies that our
system can be randomly deposited on different surfaces and
implemented in a large range of practical applications, for
instance in plasmon-based photovoltaic devices [63] or solar
70090011001300024670090011001300700900110013007009001100130070090011001300700900110013007009001100130070090011001300 70090011001300020k40k60k70090011001300700900110013007009001100130070090011001300700900110013007009001100130070090011001300 70090011001300020k40k60k70090011001300700900110013007009001100130070090011001300700900110013007009001100130070090011001300 abs(nm2)scat(nm2)Wavelength (nm)8xMI7xMI6xMI5xMI4xMIPlanar antennaMIMMIMIMAirGlass3002001000E/E020.060.040.02Efar [V/m]E0k-constrastscat/absabs/scat20-2020-20Re[Ez/ E0]Re[Ex/ E0]8xMI7xMI6xMI5xMI4xMI7 bilayers8 bilayers6 bilayers0.070.050.030.01[V/m]70k70k070k070k0q(deg)Absorption TEAbsorption TMScattering TEScattering TMnqkEnqkE60080010001200140016001800Wavelength (nm)60080010001200140016001800Wavelength (nm)60080010001200140016001800Wavelength (nm)60080010001200140016001800Wavelength (nm)q(deg)1020305060q(deg)q(deg)0[nm2][nm2][nm2][nm2]40102030506040102030506040102030506040 transparent radiators [64], as well as they can be dissolved in
solution for biomedical applications [65].
FIG. 12. Calculated scat/abs (red curve) and abs/scat (green curve)
of a randomly oriented hyperbolic meta-antenna made of 5 bilayers
of Au (10 nm each) and dielectric with n = 1.75 (20 nm each) in
water (n = 1.33). The curves are obtained by making a convolution
of the cross sections obtained for the three different orientations
between the incident electric field and the meta-antenna as shown in
the inset.
APPENDIX B: SAMPLE FABRICATION
Hyperbolic meta-antennas were prepared by inductively
coupled plasma (ICP) etching of
the gold/dielectric
multilayers with the Cr disk as mask, which was fabricated
by hole mask colloidal lithography [56-58]. With this
approach it is possible to fabricate large areas of hyperbolic
meta-antennas with the predicted properties, which can be
easily transferred on other substrates or disperse in solution,
as demonstrated recently by some groups who already
proposed detailed and efficient protocols [66, 67, 64].
1. Stacking bi-layers fabrication.
Microscope glass slides were cleaned with acetone and 2-
propanol with 2min sonication respectively. After deionized
water (DI) washing and blow drying under N2 flow, the glass
wafers were ready for the multilayer deposition. For the
Au/SiO2 stacking layer deposition, the glass wafers were
loaded into an electron beam deposition (E-beam, PVD75
Kurt J. Lesker company) chamber. One unit of the metal-
dielectric bi-layer consisted of 0.5nm Ti +10 nm Au + 0.5 nm
Ti + 20 nm SiO2, in which Ti served as the adhesion layer.
The deposition of the bi-layer unit was repeated five times.
For the Au/TiO2 stacking layers, the glass wafers were loaded
into an electron beam deposition chamber (Kenosistec KE
500 ET), and 0.5 nm Ti + 10 nm Au + 0.5 nm Ti layers were
deposited at a rate of 0.3 Å/s. The wafer was then transferred
to an atomic layer deposition chamber (ALD, FlexAL,
Oxford Instruments) and TiO2 was deposited using a process
with titanium isopropoxide as the titanium precursor and
oxygen plasma as the oxidizer. The process was repeated at
80 °C temperature for 383 cycles to produce a film with a
thickness of 20nm, which was verified with ellipsometry.
One unit of the Au/TiO2 metal dielectric bi-layer consisted of
0.5 nm Ti + 10 nm Au + 0.5 nm Ti + 20 nm TiO2. The
deposition of the bi-layer unit was repeated five times.
2. Cr disk etching mask fabrication.
On the top of stacking bilayers, photoresist (950 PMMA A8,
Micro Chem) was spin coated at 6000 rpm and soft baked at
180 ℃ for 1min. After O2 plasma treatment (2min, 100W,
Plasma cleaner, Gambetti), Poly(diallyldimethylammonium
chloride) solution (PDDA, Mw 200,000-350,000, 20 wt. %
in H2O, Sigma, three times diluted) was drop coated on the
top of the PR surface and incubated for 5min to create a
positively charged surface. The extra PDDA solution was
washed away under flowing DI water after 5min incubation.
Then negatively charged polystyrene(PS) beads (diameter
552nm, 5wt% water suspension, Micro Particle GmbH ) were
drop coated on the as prepared stacking bi-layers, cleaned
after 30s under flowing DI water and dried with N2 flow.
Thereby, random distributed PS beads were attached on top
of the photoresist. The samples were treated with O2 plasma
etching in the inductively coupled plasma-reactive ion
etching system (ICP-RIE, SENTECH SI500) to reduce the
size of PS beads. Gold film (40nm) was sputter coated
(Sputter coater, Quorum, Q150T ES) on top of the sample to
serve as an etching mask to protect the PR underneath. After
removal of the PS beads by Polydimethylsiloxane (PDMS)
film, the samples were treated again by O2 plasma in the ICP-
RIE system to etch away the PR and create randomly
distributed holes as mask on top of the stacking bi-layers. The
diameter of the holes was controlled by varying the PS bead
O2 plasma treatment time. E-beam deposition of 100nm Cr
was then performed with a vertical incident angle. Followed
by liftoff of the PR in acetone, randomly distributed Cr disks
on the stacking multilayer were fabricated.
3. Meta-antennas fabrication.
With the Cr disk mask, ICP-RIE etching was carried out with
CF4 gas flow 15sccm, radio frequency (RF) power 200 W,
ICP power 400W, temperature 5℃, pressure 1Pa. The etching
time was adjusted according to the stacking film thickness to
ensure all the extra stacking bi-layer material, except for the
area under Cr mask, was removed. Then the sample was
soaked in Cr etchant (Etch 18, Organo Spezial Chemie
GmbH) for 2min to remove the Cr mask. Followed by DI
water cleaning and drying under N2 flow, the sample
morphology was characterized with a scanning electron
microscope (SEM). In Fig. 13 we show a representative SEM
image of the randomly distributed Au/SiO2 meta-antennas
fabricated on a glass substrate. As shown in the inset, the
stacking layers can be well distinguished indicating that we
were able to fabricate multilayered nanostructures without
damaging the multilayers while maintaining the structural
integrity.
67592511751425167519250246810 kkEEkE-contrastWavelength (nm)scat/absabs/scat of 5 bi-layers Au/TiO2 at three different angles of incidence:
0°, 30° and 60° to prove the polarization and angular
independence predicted by the calculations of absorption and
scattering cross sections plotted in Fig. 11.
FIG. 13. SEM image (scale bar 4 m) of hyperbolic meta-antennas
fabricated using hole mask colloidal lithography on top of a
multilayer of Au and SiO2. Inset image: detail of the fabricated
structures showing the multilayered structure of the single meta-
antenna (scale bar 400 nm).
APPENDIX C: OPTICAL CHARACTERIZATION
the measurement of
the samples,
Cary 5000 UV-vis- near infrared spectrophotometer was used
transmission spectra. Before
for
measuring
the baseline correction was
performed by collecting the 100% transmission from a glass
slide and 0% transmission with blocked probing light. The
incident light is unpolarized. The transmission spectra were
collected from the samples with the meta-antennas facing the
incident light. To collect angle resolved transmission spectra,
the samples were rotated from the normal incident position.
In Fig. 14 we plot the transmission spectra of the sample made
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|
1901.08830 | 1 | 1901 | 2019-01-25T11:08:34 | Three-dimensional acoustic double-zero-index medium with a Dirac-like point | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | We report a design and experimental realization of a three-dimensional (3D) acoustic double-zero-index medium (DZIM), whose effective mass density and compressibility are nearly zero simultaneously. The DZIM is constructed from a cubic lattice of three orthogonally-aligned metal rods in air. The combination of lattice symmetry and accidental degeneracy yields a four-fold degenerate point with conical dispersion at the Brillouin zone center, where the material becomes a 3D DZIM. Though occupying a finite volume, the 3D DZIM maintains the wave properties of a "void space," and enables rich applications. For demonstration, we fabricate an acoustic "periscope" by placing the designed 3D DZIM inside a 3D bending waveguide, and observe the unusual wave tunneling effect through this waveguide with undisturbed planar wavefront. Our findings establish a practical route to realize 3D DZIM as an effective acoustic "void space," which offers unprecedented opportunities for advanced sound manipulation. | physics.app-ph | physics | Three-dimensional acoustic double-zero-index medium with a Dirac-like point
Changqing Xu1, Guancong Ma2*, Ze-Guo Chen1, Jie Luo3,4, Jinjie Shi4,
Yun Lai3,4* and Ying Wu1*
1Division of Computer, Electrical and Mathematical Science and Engineering, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
2Department of Physics, Hong Kong Baptist University, Kowloon Tong, Hong Kong
3National Laboratory of Solid State Microstructures, School of Physics, and Collaborative
Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
4College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano
Science and Technology, Soochow University, Suzhou 215006, China
Emails: [email protected], [email protected], [email protected]
Abstract:
We report a design and experimental
realization of a three-dimensional (3D) acoustic
double-zero-index medium (DZIM), whose effective mass density and compressibility are nearly
zero simultaneously. The DZIM is constructed from a cubic lattice of three orthogonally-aligned
metal rods in air. The combination of lattice symmetry and accidental degeneracy yields a four-fold
degenerate point with conical dispersion at the Brillouin zone center, where the material becomes a
3D DZIM. Though occupying a finite volume, the 3D DZIM maintains the wave properties of a
"void space" and enables rich applications. For demonstration, we fabricate an acoustic "periscope"
by placing the designed 3D DZIM inside a 3D bending waveguide, and observe the unusual wave
tunneling effect through this waveguide with undisturbed planar wavefront. Our findings establish a
practical route to realize 3D DZIM as an effective acoustic "void space," which offers unprecedented
opportunities for advanced sound manipulation.
1
A wave propagating in a medium with one or more constitutive parameters vanishing does not
accumulate any phase retardation. This characteristic can be leveraged for a number of unique wave
functionalities such as wavefront engineering1-10, cloaking objects8-14, wave
tunneling15-23,
asymmetric transmission24-26 and photonic/phononic doping27-32. A single-zero-index medium, with
only one constitutive parameter near-zero, usually has a significant impedance mismatch with the
background medium, which is undesirable for real applications. A double-zero-index medium
(DZIM), with both constitutive parameters near-zero, can overcome this obstacle, owing to its
finite-valued effective impedance7-11. In the past decade, various approaches have been proposed to
realize DZIM for electromagnetic1-4,6,8,9,11,12,16,17,19-23,27-32 and acoustic waves5,7,10,13-15,18,24-26. One
route relies on the realization of the Dirac-like conical dispersion at the Brillouin zone center using
the accidental degeneracy of states7-10,18,22. Another approach is the doping of single-zero-index
media27-32, which is an extraordinary consequence of impurities. A third method of realizing
impedance-matching in zero-index medium involves the introduction of parity-time symmetry33.
However, to the best of our knowledge, DZIM has only been realized in two-dimensional (2D)
systems so far, which restrict their applications to in-plane propagating waves in planar structures5,13.
Due to the complexity induced by higher dimensions, both the structural design and experimental
realization in 3D systems are more difficult than those in 2D systems. For airborne acoustics, they
are fundamentally more challenging because of the big contrast in mass density and speed of sound
between air and solids.
In this work, we demonstrate the design and experimental realization of a 3D acoustic DZIM
with effective mass density and compressibility approaching zero simultaneously. The design
principle is based on the combination of lattice symmetry and accidental degeneracy. The 3D DZIM
is a phononic crystal (PC) consisting of a cubic lattice of unit
structures with three
orthogonally-aligned metal rods in air, which can be regarded as sound-hard scatterers. With
non-symmorphic glide symmetries34-37 in the three spatial directions, the lattice symmetry enables a
three-fold degeneracy at the Brillouin Zone center corresponding to three dipolar resonances.
Moreover, accidental degeneracy can be further achieved by tuning the geometry of the unit structure
such that the monopolar resonance overlaps with the dipolar ones, leading to a four-fold degenerate
point. In the vicinity of this point, the band structure manifests linear dispersion in all directions of
the reciprocal space, which looks similar to the Weyl point despite a different physical origin. We
call it a Dirac-like point in 3D k-space. By using an effective parameter retrieval method38,39, we
affirm that the effective mass density and compressibility simultaneously cross zero at the frequency
of the Dirac-like point. By experimentally constructing the 3D acoustic DZIM and putting it inside a
2
bending waveguide with two 90 bends, we demonstrate the unusual wave tunneling functionality
with a non-disturbed planar wavefront at the exit. This is a direct proof of the double-zero-index
property in three dimensions. To the best of our knowledge, our work is the first realistic theoretical
proposal and experimental realization of a 3D DZIM. Although a 3D DZIM occupies a finite volume,
it inherits some wave properties of an effective "void space". This rare physical nature leads to many
unusual applications such as 3D wave tunneling and cloaking of 3D objects, etc.
Results
Realization of 3D DZIM by using a PC with glide symmetries. We begin with a PC of a cubic
lattice, whose unit cell consists of three orthogonally-aligned aluminum rods in air, as illustrated in
Fig. 1a. The lattice constant is a. The aluminum rods are aligned in the x-, y-, z-axes, respectively, all
/ 2a
having a square cross section with a side length L. When the axes of the rods are separated by
,
the system has glide symmetries34-37, which can be defined as the combination of reflection
symmetry and translation by half of a lattice constant:
G
xy
M
xy
a
2
z
:
,
,
x y z
G
yz
M
yz
a
2
x
:
,
,
x y z
y
,
,
x z
a
2
,
x
,
z
,
y
a
2
,
G
zx
M
zx
a
2
y
:
,
,
x y z
,
z y
,
x
a
2
.
(1)
These non-symmorphic symmetry operators
xyG ,
yzG , and
zxG transform the
thi
(i=x,y,z) rods
into the thj
(j=y,z,x) rods. The lattice also has
3C rotational symmetry about the [111] diagonal
axes40 and mirror symmetries about the xy, yz, zx planes, as shown in Figs. 1a-1b.
The band structure of the PC with
is shown in Fig. 1c, which exhibits a three-fold
degeneracy at the point for the second, third and fourth branches. The eigenfields of the
0.3
a
L
three-fold degenerate states and the single state above it (on the fifth branch) are plotted in Figs.
1d-1g, respectively. Clearly, the single state is a monopolar state while the three-fold degenerate
states are three dipolar states. The degeneracy of the dipolar states at the point is guaranteed by
the symmetry of the system, regardless of the geometry. Altering the size of the rods only changes
the eigenfrequency of these states. Therefore, accidental degeneracy of the monopolar and dipolar
3
states can be further achieved by altering the parameter L.
The band structure of a PC with
L
0.35
a
is plotted in Fig. 2a. In this case, the monopolar
state overlaps with the three-fold degenerate dipolar states, leading to a four-fold degenerate point at
the point. An enlarged view of the band structure near the point in the
k
x
k
y
plane is
shown in Fig. 2b, in which a conical dispersion intersecting with two flat bands at the four-fold
degenerate point is observed. By examining the dispersions in the
k
y
k
z
and
k
z
k
x
planes, we
observe almost the same conical dispersion as well as the intersecting flat bands (see Supplementary
Figure 2 for details). Therefore, Dirac-like linear dispersion emerges in the vicinity of this four-fold
degenerate point in all directions. This rare property is similar to that of the Weyl point. However,
the physical origins are intrinsically different. A Weyl point is induced by breaking time-reversal
symmetry or/and parity inversion41-43, while the Dirac-like linear dispersion presented here is
induced by the accidental degeneracy of eigenstates with different parities7-10,18,22. We call this
four-fold degenerate point as a Dirac-like point in the 3D k-space.
From a tight-binding model, the Hamiltonian near the Dirac-like point can be described in the
basis of s state and p states:
H
0
2
it
2
it
2
it
Here
s
E k
sin
k
sin
sin
k
k
sp
sp
sp
2
it
sp
E
x
y
z
sin
k
0
px
0
k
x
2
it
sp
sin
k
y
2
it
sp
sin
k
z
E
0
0
py
k
0
0
E k
pz
.
s
+2
t
s
cos
k
x
cos
k
y
cos
k
z
,
px
py
+2 cos
t
k
x
2 cos
t
+2 cos
t
k
x
2 cos
t
k
y
k
y
2 cos
t
k
z
,
2 cos
t
k
z
,
s
px
E k
E k
E k
E k
py
pz
pz
+2 cos
t
k
x
2 cos
t
k
y
2 cos
t
k
z
,
(2)
where
s ,
vector k
pi (i=x,y,z) are the on-site energy,
xk x ,
yk y and
zk z are the components of wave
, t and t represent nearest neighbor hoppings. Dirac-like linear dispersion and two flat
4
branches can be immediately obtained in all directions as a consequence of the accidental degeneracy
of
E E . (see Supplementary Note 2). The linear dispersion at the Dirac-like point can be
=s
pi
exploited for a myriad of fascinating phenomena such as negative refraction9, Klein tunneling9,44 and
super-collimation9,44.
On the other hand, the Dirac-like linear dispersion may also appear as a consequence of double
zero parameters in DZIM. Suppose the effective mass density and compressibility are both dispersive
m , respectively. A frequency dependent
in frequency and cross zero at frequencies
d and
function can be expanded as follows:
f
f
0
f
0
o
2
, (3)
where
~eff
~eff
2
o represents higher orders. The effective mass density
d
m
the effective compressibility
d , while
m . Here
near
near
,c c denote the linear coefficients of
c
c
eff can be written as
eff can be written as
eff and
eff ,
respectively. If the effective mass density and compressibility cross zero simultaneously, i.e.,
D
, by substituting the above formulas into the general formula of dispersion relation,
m
d
2
c k
2
2
, in which
2
c
1
1
D
2
c c
, we obtain the dispersion relation near
0 as
2
k
~
c c
2
D
D
2
near
D , which denotes Dirac-like linear dispersions near the point.
To calculate the effective mass density
eff for our proposed system,
we adopt the effective parameter retrieval method based on field averaging38,39. The results are
eff (solid black line) and
plotted in Fig. 2c, which shows the effective mass density
eff and compressibility
/
0
compressibility
eff (solid blue line) indeed cross zero simultaneously at the frequency of the
/
0
Dirac-like point
D
0.807(2
c a
/
)
for the case of
L
0.35
a
. This confirms that such a PC
behaves effectively as the desired DZIM. In comparison, when
L
0.3
a
, the effective mass density
(black dashed line) and compressibility (blue dashed line) cross zero at different frequencies
d
, which correspond to the eigenfrequencies of the dipolar
0.82(2
0.88(2
c a
c a
m
and
)
)
/
/
and monopolar states at the point
single-zero-index media can be realized in this case. When the band gap between
in the band structure, respectively. Therefore, only
m
d and
closes, the Dirac-like conical dispersion emerges as a result of the double-zero-index. The
5
Hamiltonian and effective medium pictures are consistent with each other.
Besides the Dirac-like linear dispersion, the Dirac-like point is accompanied by the existence of
two additional flat bands, as shown in Figs. 2a and 2b. These two flat bands correspond to transverse
acoustic waves in which the particle displacement directions are perpendicular to the propagation
direction. This unusual characteristic is manifested in the eigenstates plotted in Figs 1f and 1g.
Counterintuitive as it may sound, such transverse acoustic waves indeed arise as a direct result of the
zero effective mass density (See Supplementary Note 4). Such transverse acoustic waves cannot be
easily coupled to normal acoustic waves as longitudinal waves, and therefore their existence does not
affect the wave properties near the Dirac-like point. The wave behavior near the Dirac-like point is
mainly determined by the linear branches.
With
eff and
eff both vanishing at the Dirac-like point, the 3D DZIM can be regarded as an
acoustic "void space". To demonstrate the unique consequence of this property, we begin by
considering the transmission of a normally incident wave through a slab of 3D DZIM with a finite
thickness. It is easy to see that the transmission coefficient is always unity, despite the potential
impedance mismatch between the DZIM and the background. The DZIM seemingly connects the
input surface to the output, thus the space it occupies becomes a void for the wave. We verify this
property analytically using the effective medium, and numerically using the PC structure (See
Supplementary Note 5, 6). We emphasize that this property is unique to 3D DZIM and cannot be
found in any other acoustic materials. In comparison, a wave is always reflected by a slab of an
ordinary medium with a different impedance from the background, unless at the frequencies of
Fabry-Perot resonances. For a wave incident on a slab of single-zero-index medium, the transmission
coefficient decreases when the slab thickness increases (See Supplementary Note 6 and
Supplementary Fig. 5 for a demonstration). On the other hand, a DZIM in 2D is only equivalent to
"void plane," and its functionalities are limited to in-plane propagating waves5-10,13. Next, extending
from the transmission problem of a slab, it is straightforward to see that waves can perfectly
propagate through a 3D DZIM with a finite volume. For example, consider an incoming wave that is
normally incident onto one surface of a cube of 3D DZIM, the incident wave is partitioned into five
waves, each carrying an identical amount of energy, that radiate normally from the other 5 surfaces.
If we close any 4 outlet surfaces by blocking them with totally reflective boundaries, the DZIM cube
becomes a wave-steering device that can direct waves to orthogonal directions in all three
dimensions with 100% efficiency.
Wave tunneling enabled by DZIM. To exploit the unique property of the 3D DZIM as a 3D
6
acoustic "void space," we have designed and fabricated a 3D "periscope" for sound. As illustrated in
Fig. 3a, it is an acoustic bending waveguide with two 90 bends. The incident wave comes from the
top along the negative z-direction. The first bend turns the waveguide from negative z-direction to
negative y-direction, and the second bend turns from negative y-direction to positive x-direction. The
waveguide is filled with the PC as 3D DZIM. Figures 3b and 3c show the simulated pressure field
distribution with the filling material being the PC and its effective medium, respectively. For both
cases, it is seen that the systems have minimal reflection. Moreover, the outgoing waves retain a
planar wavefront, but the wavefronts are re-oriented and parallel to the yz plane now. When the
DZIM is absent, the wave is inevitably scattered by the bends which severely scrambles the outgoing
wavefront, as shown in Fig. 3d. These results clearly demonstrate the equivalence of our PC and a
3D DZIM by wave-tunneling
through 3D bending waveguide with wavefront-preserving
re-orientation, which is the direct and unique consequence of the 3D DZIM as an effective acoustic
"void space."
Experimental validation. We build the "periscope" waveguide with 12 aluminum plates. The
waveguide is shown in Fig. 4a. It has a square cross-section with a side length of 14.25 cm (5 unit
cells). As shown in Fig. 4b, the PC is built inside the waveguide using aluminum rods with specific
lengths. The rods have a square cross-section with a side length of 1.0 cm. The lattice constant is
2.85 cm. In the simulation, this PC has a Dirac-like point at
f
Dirac
/ 2
D
9,742
Hz
. Note that
to ensure the dipolar states are free from deformation, the unit cell is chosen in the way shown in Fig.
1b, so that the sound-hard PC-air interface will not break the mirror symmetry of the PC. We mount
a loudspeaker with a diameter of 12cm on one end of the waveguide to generate a plane wave that
propagates in the negative z-direction, as shown in Fig. 4a. The waveguide then bends to negative y-
-direction, then positive x-direction. We use a microphone to measure the transmitted wave at the
exit of the waveguide. The microphone is mounted on a translational stage to raster-scan the wave
profile in the yz-plane, the xy-plane, and the xz-plane.
We perform a 2D Fourier transform on the spatial map in frequencies near
f
Dirac
. The Fourier
transforms of the yz-plane, which is parallel to the PC-air interface at the exit of the waveguide, are
shown in Fig. 5a. Near
f
Dirac
=9 680
Hz(cid:273)
, the magnitude of the Fourier transform has a sharp peak at
k
y
k
z
. This implies that the acoustic wave exiting from the PC has a wavevector dominated by
0
xk , which indicates a planar wavefront with minimal distortion, despite having changed its
propagation direction twice. For frequencies above and below
f
, the outgoing waves possess
Dirac
7
yk
and
zk
components, as the sharp peak gradually expands into a circle (Fig. 5a). We further
examine the 2D Fourier transforms of the rasterized map in the xy- and xz-planes, as shown in Fig.
5b, c. At 9,680 Hz, the magnitudes sharply peak at
k
x
2
f
Dirac
/
c
177
m
1
, which clearly means
that the outgoing wave is a plane wave. When the frequency deviates from
f
, the wave starts to
Dirac
possess
yk
and
zk
components. Also, the results obtained at 9,800 Hz and 9,560 Hz are noticeably
noisier than at
f
Dirac
, which indicates a reduction in the transmission coefficient when the frequency
deviates from
f
Dirac
. This is expected since the PC is a DZIM at
f
. In Fig. 5d and Fig. 5e, we
Dirac
plot the real-space map of the pressure fields at
f
Dirac
in the xy- and xz-planes. Despite the presence
of some noise, which is unavoidable due to the non-ideal acoustic condition of our laboratory,
well-defined planar wavefronts can be clearly identified, which unambiguously shows that the sound
remains a plane wave after bending twice in the waveguide. These experimental results convincingly
show that at normal incidence, a plane wave at
f
Dirac
can go through the PC with minimal distortion,
and can be re-directed into another direction that is parallel to the PC-air interface. This effect is the
signature of a DZIM. We note that the measured
f
Dirac
is 9,680 Hz, which deviates from the
prediction by only ~0.4% and is well within the fabrication tolerance.
The 3D sound tunneling effect is not affected by the presence of sound-hard defects. To show
this, we place a defect with the shape and size of one unit cell inside the waveguide. The defect has
sound-hard boundaries. The results are shown in the Supplementary Note 7. It can be seen that when
the defect is embedded in the PC, it generates almost no scattering, and the outgoing wavefront
remains intact.
Conclusions
In conclusion, we have provided a theoretical recipe for design 3D DZIM using PCs. Due to the
combination of lattice symmetries and the accidental degeneracy, the PC possesses a Dirac-like point
at the Brillouin zone center in 3D k-space. The linear dispersion is affirmed by its Hamiltonian from
a tight-binding model. On the other hand, by using an effective parameter retrieval method, we show
that the effective mass density and compressibility of the PC approaching zero simultaneously at the
frequency of Dirac-like point. This leads to near zero effective refractive index and finite-valued
effective impedance in all three spatial directions. Such rare property bestows the PC some intriguing
functionalities of an effective acoustic "void space," including sound tunneling through an
arbitrarily-shaped 3D waveguide with high transmittance. Based on this recipe, we have designed
and experimental realized a 3D DZIM. We demonstrate the effectiveness of our approach and the
8
property of the DZIM by an acoustic "periscope" bending waveguide filled with the PC.
Experimental results conclusively show that the sound can tunnel through the bends while
maintaining a planar wavefront, which is an important characteristic of the DZIM. Our findings not
only demonstrate that the concept of DZIM can be extended to three dimensions, but also provide a
novel platform for advanced 3D sound manipulation.
Methods
Simulations. The band structures, eigenstates (Figs. 1c-g, 2a, 2b) and field distributions (Figs. 3b-d)
are calculated by the acoustic module in commercial Finite-Element method software (COMSOL
MULTIPHYSICS). The effective mass density and compressibility (Fig. 2c) are calculated by the
field averaging at the surface of the unit cell in COMSOL MULTIPHYSICS. The density and
velocity of sound in air are chosen to be 1.21 kg/m3 and 343m/s, respectively. The three
orthogonally-aligned aluminum rods are treated as rods with hard-wall boundaries because of the
huge impedance mismatch between air and aluminum.
9
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45. Supplementary Information
Acknowledgements
The work described in here is partially supported by King Abdullah University of Science and
Technology
(KAUST) Office
of Sponsored Research
(OSR)
under Award No.
OSR-2016-CRG5-2950 and KAUST Baseline Research Fund BAS/1/1626-01-01. G. M. is supported
by the Hong Kong Research Grants Council (grant no. RGC-ECS 22302718, and ANR-RGC
A-HKUST601/18, CRF C6013-18GF), the National Natural Science Foundation of China (grant no.
11802256), and by the Hong Kong Baptist University through FRG2/17-18/056. Y. L. is supported
by National Key R&D Program of China (2017YFA0303702), National Natural Science Foundation
of China (Grant No. 61671314 and No. 11634005).
12
Author contributions
C. X. designed the phononic crystal and performed the numerical simulations. G. M. designed the
experiment, and carried out the measurements and data analysis. G. M. and J. S. assembled the
"periscope" waveguide and set up the experiment. Z.-G. C., C. X. and Y. W. contributed to the
theoretical analysis of Hamiltonian. J. L. and Y. L. provided the effective parameter retrieval method.
C. X., G. M., Y. L. and Y. W. wrote the manuscript with inputs from all authors. The project was
supervised by G. M., Y. L. and Y. W.
Competing interests: The authors declare no competing interests.
13
Figures
Fig. 1 Band structure and eigenstates of the 3D PC with glide symmetry. a, b Different types of unit
cell selection for the same PC. The lattice constant is a and the host medium (gray) is air. Colored
square blocks with side length L L a
are aluminum blocks. c Band structure of the PC with
L
0.3
a
. Black and blue dots represent the monopolar state and the three-fold degenerate dipolar
states at the Brillouin Zone center. d-g Acoustic pressure field distributions of the monopolar state
and dipolar states.
14
Fig. 2 Realization of 3D acoustic DZIM by accidental degeneracy. a Band structure of the PC with
0.35
a
L
, which shows a four-fold degenerate point (the Dirac-like point) with a conical dispersion
in its vicinity at the point. b A zoom-in plot of the conical dispersion surfaces near the Dirac-like
eff (black curves) and
plane. c The normalized effective mass density
in the
point
k
k
x
y
compressibility
eff (blue curves) for the case of
L
0.35
a
(solid curves) and
L
0.3
a
(dashed
curves). For the PC with
L
0.35
a
frequency of the Dirac-like point (
, the effective parameters cross zero simultaneously at the
D
). While for the PC with
0.807(2
0.3
a
c a
, the
L
/
)
effective parameters cross zero at different frequencies (frequencies of M and D states shown in Fig.
1c) and only single-zero-index medium is obtained.
15
Fig. 3 Transmission of sound through an acoustic "periscope" filled with DZIM. a Illustration of the
designed "periscope" for sound, which is a 3D bending waveguide with two 90 bends (gold color).
The red region represents the 3D DZIM and the blue region represents air. Waves can perfectly
tunnel through the 3D bending waveguide filled with either the designed PC as the 3D DZIM (b) or
the 3D DZIM with effective parameters of the PC (c), respectively. The planar wavefront is well
preserved at the exit. d In comparison, the wave is inevitably scattered by the bends without the 3D
DZIM filling, which severely scrambles the outgoing wavefront.
16
Fig. 4 Experimental setup. a A loudspeaker emits a plane wave in the negative z-direction. The
waveguide bends twice and the output is in the positive x-direction. A microphone is mounted on a
translational stage to scan the sound in the output side in all yz-, xy-, and xz-planes. b Some
boundaries of the waveguide are removed to show the PC inside.
17
Fig. 5 Plane wave tunneling with minimal distortion. a The 2D Fourier transforms of the scanned
field patterns near the frequency of the 3D Dirac-like point
f
9,680
Hz
. In the
k
y
k
z
plane,
Dirac
the Fourier transform has a distribution that peaks at
k
y
= =0
k
z
at
f
Dirac
, the distribution gradually
expands as the frequency moves away from
f
Dirac
9,680
Hz
. All maps in a have the same
coordinates. b,c In both the
k
x
k
y
and
k
x
k
z
planes at
f
Dirac
(middle panels), the Fourier
transforms imply a plane wave in the positive x-direction. The red arrows mark the position of
k
x
2
f
Dirac
/
c
177
m
1
,
k
y
0
z
k . Away from Dirac
f
, non-zero
k
z
k
y
components start to
appear. d and e show the real-space maps of xy-plane and xz-plane at
f
respectively, wherein
Dirac
planar wavefront can be clearly seen.
18
|
1912.03326 | 1 | 1912 | 2019-11-26T17:08:00 | High efficiency end-fire 3-D optical phased array based on multi-layers Si3N4/SiO2 platform | [
"physics.app-ph",
"physics.optics"
] | Beam steering device such as optical phased array (OPA) is a key component in applications of solid-state Lidar and wireless communication. The traditional single-layer optical phased array (OPA) results in a significant energy loss due to the substrate leakage caused by the downward coupling from the grating coupler structure. In this work we have investigated a structure based on multi-layers Si3N4/SiO2 platform that can form a 3-D OPA to emit the light from the edge of the device with high efficiency, a 2-D converged out-coupling beam will be end-fired to the air. The high efficiency and wide horizontal beam steering are demonstrated numerically, the influence of vertical cross-talk, the delay length, number of waveguide layers, and the fabrication feasibility are also discussed. | physics.app-ph | physics | High efficiency end-fire 3-D optical phased array based
on multi-layers 𝐒𝐢𝟑𝐍𝟒/𝐒𝐢𝐎𝟐 platform
DACHUAN WU,1 YASHA YI,1, 2, *, AND YUXIAO ZHANG,1
1Integrated Nano Optoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Michigan,
4901 Evergreen Rd., Dearborn, Michigan 48128, USA
2 Energy Institute, University of Michigan, 2301 Bonisteel Blvd., Ann Arbor, Michigan 48109, USA
*[email protected]
Abstract: Beam steering device such as optical phased array (OPA) is a key component in applications of solid-state
Lidar and wireless communication. The traditional single-layer optical phased array (OPA) results in a significant
energy loss due to the substrate leakage caused by the downward coupling from the grating coupler structure. In this
work we have investigated a structure based on multi-layers Si3N4/SiO2 platform that can form a 3-D OPA to emit the
light from the edge of the device with high efficiency, a 2-D converged out-coupling beam will be end-fired to the air.
The high efficiency and wide horizontal beam steering are demonstrated numerically, the influence of vertical cross-
talk, the delay length, number of waveguide layers, and the fabrication feasibility are also discussed.
© 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
1.
Introduction
With the emerging applications such as solid-state Lidar (light detection and ranging), the beam steering based on
integrated optical phased array (OPA) has drawn a lot of research efforts in the past decade [1]. Significant progress
has been made including thermal tuning [2], electro-optics tuning [3], high sensitive wavelength tuning [4, 5],
integrated on-chip light source [6], side lobe suppression by aperiodic or apodized array placement [7-9], etc.
The traditional way in on-chip integrated photonic research usually utilizes the single waveguide layer structure,
which is also the case of most studies on OPA. For example, in [1-8], the device structure could be sophisticated due
to various requirements, while all containing only one waveguide layer, and because of this, the OPA formed by a
single layer can only have the exit beam upward. This actually is the reason of the relatively low emitting efficiency.
When the OPA is placed in an environment that both its front and back side are uniform medium, the interference of
light forms a beam not only to its front side, but also to its back side. In our previous work [10], we showed that a
portion larger than 50% of light can be emitted to the substrate when an OPA is working in the case that its front side
is air and back side is glass. However, as one of the main potential applications of integrated beam steering devices,
the solid-state Lidar usually requires a detection range over at least 100 m. The light emitting efficiency of the beam
steering devices, despite the development of light source and detector, is directly related to detection range of Lidar.
Several works have been attempted to address the relatively low efficiency challenge [11-16]. In [11], a structure
configuration to emit light from the edge of the chip is utilized. An ultra-converged beam is also achieved in [12].
Further works aiming to confine the waveguide spacing to half-wavelength have been done by various approaches
[13, 14]. However, these four works also employ the configuration of single waveguide layer. This does offer the
convenience on tuning the phase of each waveguide [11, 13, 14], but the beam emitted by such a configuration is
indeed a fan-beam, as the single waveguide layer can only form a 1-D OPA on the edge of the chip. The possibility
of emitting a 2-D converged beam from the edge (end-fire) requires a 2-D OPA on the edge side. This is discussed in
[15] and [16]. In [15], the performance of a 2-D end-fire OPA is numerically discussed, and a method utilizing
nanomembrane transfer printing to fabricate a multi-layer structure with the top Si layer from SOI wafer is proposed
and experimentally proved. In [16], a direct writing method based on ultrafast laser inscription (ULI) is applied to
achieve a structure for the conversion between single-layer waveguides and 3-D waveguides, therefore, a 2-D OPA
can be formed on the edge side.
In this work, we have studied a 3-D structure configuration based on multi-layer Si3N4/SiO2 platform to achieve a
2-D convergent beam emitted from the edge. We numerically demonstrate the performance of this structure and
discuss the main improvement on the energy efficiency in both the light input end and emitting end. The influence of
vertical cross-talk, the engineering of delay length and the number of waveguide layers are also investigated.
2. Structure Configuration
The structure configuration is as shown in Fig. 1. The device consists of 6 Si3N4 layers with a thickness of 800nm, 5
SiO2 layers with 500nm thickness are sandwiched by the Si3N4 layers, which is shown as Fig 1 (b). Each Si3N4 layer
is patterned, Fig. 1 (c) is the top view of each Si3N4 layers, 9 waveguides with 800nm width are placed, the spacing
between the center of each waveguide is 2𝜇𝑚. In the red circled part, the length of the waveguides is gradually
increased by a step of 6200nm.
Fig. 1. Illustration of the structure. (a) Front view: the 3-D OPA is formed on the front edge of the device, (b) Side view:
cross-section of the device, 6 Si3N4 layers of 800nm thickness and 5 SiO2 layers of 500nm thickness, (c) Top view: pattern
of each waveguide Si3N4 layers, contains 9 waveguides with 800nm width, spacing 2𝜇𝑚.
The fabrication strategy of this device is discussed as follows. This structure can be fabricated on Si substrate.
Firstly, a SiO2 layer of 2𝜇𝑚 is deposited as low index substrate; secondly, 6 patterned Si3N4 layers and 5 un-patterned
SiO2 layers are fabricated. The 6 patterned Si3N4 layers have exactly the same pattern, which is as shown in Fig. 1.
There are two possible ways to fabricate this multi-layer structure. First, the method proposed in [12] can be utilized
in this fabrication, the challenge in this method will be the control on the planarization step, this step will influence
the thickness of the sandwiched SiO2 layer, while the precise control of this thickness is crucial in this structure.
Second, thanks to the identical patterns on each Si3N4 layer, it is possible to utilize the self-aligning method proposed
in [15]. The fact that Si3N4 and SiO2 have a low etching selectivity between each but both have a high selectivity
against Si also can help on this method: the selectivity difference offers a possibility to etch down multiple layers of
Si3N4 and SiO2 within the same etching step where a Si is used as the mask. However, the extremely high aspect ratio
will be an obstacle here. It is more realistic to fabricate this structure with a combination of the two methods: use the
self-aligning method to etch down 2-3 Si3N4 layers within one step, and then use the multi-step process proposed in
[12] to get the 6 patterned Si3N4 layers eventually. As long as the self-aligning method can handle more than one
Si3N4 layer in one step, (the aspect ratio of the hole in the etching step will be 1.2 𝜇𝑚 /2.1 𝜇𝑚=0.57 in the case of
etching down two Si3N4 layer and one sandwiched SiO2 layer at once), the number of the total steps required will be
significantly reduced.
After the fabrication of 6 patterned Si3N4 layers and 5 un-patterned SiO2 layers, a final passivation SiO2 layer
needs to be deposited. Following this, the wafer will be diced, and the edge of the die will be polished to ensure the
input coupling from the external laser source and the output coupling at the emitting end. As the final step, a quarter-
wavelength SiO2 layer (T=1550/(4*1.45)=267nm) will be deposited on the edge side, which can perform the
antireflection function between Si3N4 waveguides and the air. The whole fabrication process follows the standard
microchip fabrication process, so the method is CMOS compatible.
In this work, we only consider 9 waveguides in each layer, and the total periodicity of the array at the emitting end
is 2𝜇𝑚. It's worth to note that even though only 9 waveguides are considered in this work, it is possible to have more
in each layer by the using of beam splitter tree [1]. Then, an Ω shape delay length structure is employed to create phase
different between the waveguides. The difference in the length between each waveguides is the same, and the 2𝜇𝑚
periodicity can eliminate the cross-talk between waveguides, therefore, the phase difference between each array at the
emitting end will be same, which can satisfy the phased array condition in Equ. (1) in each waveguide layers
(horizontal direction). In the vertical direction, because of the structure in each waveguide layers are exactly the same,
the phase difference between each layer is 0, so this also satisfies the phased array condition between layers (vertical
direction). So, this structure is able to emit a beam with 2-D convergence from the edge of the device.
In this work, we only consider 9 waveguides in each layer, and the spacing of the array at the emitting end is 2𝜇𝑚.
It's worth to note that even though only 9 waveguides are considered in this work, it is possible to have more
waveguides in each layer by the using of a beam splitter tree [1]. The convergence of the light can be enhanced by a
large number of array elements, so even though the convergence data presented in this work are obtained from 9
waveguides, it actually is possible to be further improved in principle. Then, an Ω shape delay length structure is
employed to create a uniform phase difference between the waveguides, and the 2𝜇𝑚 spacing can eliminate the cross-
talk between waveguides. Therefore, the phase difference between each array at the emitting end will be same, which
can satisfy the phased array condition in each waveguide layer (horizontal direction). In the vertical direction, because
of the structure in each waveguide layers are exactly the same, the phase difference between each layer is 0, so it also
satisfies the phased array condition between layers (vertical direction). As a total result, this structure is able to emit
a beam with 2-D convergence from the edge of the device. Equ. 1 shows the phase condition:
, (1)
where 𝜃 is the emitting angle, 𝜆0 is the vacuum wavelength, 𝜑 and d are the phase difference and spacing between
each array element.
𝑠𝑖𝑛𝜃 =
𝜆0∙𝜑
2𝜋∙𝑑
The most important improvement of this structure will be the very high energy efficiency. First, in most of the
previous studies, an external laser with single mode fiber is considered as the light source, however, the light will
suffer a considerable loss at the input coupling no matter a vertical couple or a butt couple is employed, especially in
the butt couple, the loss is usually significant because the thickness of the waveguide layer is usually ten times smaller
than the mode field diameter (MFD) of a single mode fiber with a common core diameter of 8.2𝜇𝑚. In this multi-
layer structure, 6 Si3N4 layers and 5 sandwiched SiO2 layers occupy 7.3𝜇𝑚 vertically, thus, when the light is coupled
from the single mode fiber to the on-chip waveguides, the coupling efficiency will be much higher than using single
waveguide layer structures. A spot size converter using the similar coupling mechanism was proposed in [17], it first
couples the light from a single mode fiber to a tapered stack of Si3N4/SiO2 layers with similar size, then converts the
spot shape to be a vertical line after the taper, and eventually couples the light to a Si waveguide with a much smaller
size than the fiber. Based on their result, the mode overlap between the single mode fiber and the multi-layer spot size
converter can be as high as 94%-99%. In that work, the thickness of Si3N4 layers is 225nm, while in this work, the
thickness of the Si3N4 waveguide layers is 800nm, so the coupling efficiency may not be as high as their result, but
we believe it is still obvious that the multiple Si3N4 layers can contribute to high input coupling efficiency.
On the other hand, this multi Si3N4 layer structure can also help with the apodized field distribution. In [9], a
Gaussian-apodized phased array is utilized to suppress the side lobe, in that work, the apodized field distribution across
the array is purposely designed. In this work, because of the coupling mechanism, the apodized field distribution
across each Si3N4 waveguide layers is automatically formed. This is illustrated in Fig. 2.
Fig. 2. Illustration of the apodized intensity profile of the input coupling, the total thickness of the device is equivalent to
the MFD of a common single mode fiber
The high efficiency is also contributed by the emitting end. From Fig. 1, it can be seen that the OPA is formed on
the edge of the device, the front side of the OPA is the antireflection coating and air, which is a uniform medium, and
an out-coupling beam can be generated by the interference between each array element. In addition, because the beam
is end-fired to the air, the backward emitting is highly suppressed. From the simulation result, the out-coupling
efficiency at the emitting end can be as high as 82%, the results will be discussed in part 3.
3. Result and Discussion
In this work, the FDTD (finite difference time domain) method is utilized to simulate the structure. In the simulation,
the model is set exactly same as Fig. 1, and a TM-polarized Gaussian pulse is applied as the light source, the pulse
illuminates every waveguide. Wavelength range is set to be 1400nm to 1700nm, covering the 100nm wavelength
tuning range which is used in [1]. Fig. 3 shows the farfield pattern of the device at 1550nm. It shows that the device
generates a clear main lobe at −1.53° horizontally and −6.99𝐸 − 4°vertically, this lobe has a horizontal FWHM (full
width at half maximum) of 4.43° and a vertical FWHM of 10.96°; two side lobes in horizontal direction can be
observed at −52.78° and −47.77°. The formation of the side lobes is a result of the large spacing between waveguides
in each layer, while because of the periodicity (2𝜇𝑚) is not too much larger than the wavelength (1550nm), the side
lobes are far away from the main lobe and not strong. On the other hand, the periodicity in vertical, which is the
spacing between center of each waveguide layers is 1.3𝜇𝑚, so only one clear main lobe is generated in vertical
direction. The vertical FWHM is larger than horizontal FWHM, this is because the OPA covers only 7.3𝜇𝑚 vertically,
but 18.8𝜇𝑚 horizontally.
Fig. 3. Farfield pattern of the device at 1550nm, a clear 2-D converged beam is emitted by the device.
The wavelength tuning performance of the device is shown in Fig. 4. Fig. 4 (a) is the horizontal farfield contour
map, it shows that the main lobe can be steered by wavelength tuning, the beam is steered from 10.99° at 1500nm to
−13.79° at 1600nm, a 24.78° steering range in 100nm wavelength range is achieved. This steering capability is
achieved by the delay length structure, the length difference between each waveguide is fixed, so the phase difference
between each array element in horizontal direction can be coherently changed by wavelength tuning. Fig. 4 (b) is the
vertical farfield contour map, there is no length difference between waveguides in different layers, so the phase
difference between each array element in vertical direction is always 0 in wavelength tuning, so the vertical farfield
angle changes only slightly in the whole range, it only changes 3.13𝐸 − 3°. Fig. 4 (c) shows a comparison between
the horizontal and vertical farfield angle. The beam steers linearly in horizontal direction with the wavelength variation,
and the steering is ignorable in vertical direction. Fig. 4 (d) shows the variation of horizontal and vertical FWHM, the
convergence of the beam keeps in the whole wavelength tuning range, the horizontal FWHM varies less than 7.67%,
and the vertical FWHM varies less than 7.12%. Fig. 4 (e) shows the coupling efficiency in the tuning range, this
efficiency is calculated by using the total energy emitted divided by the energy in all the waveguides right before the
emitting OPA. The efficiency at the whole range is higher than 76.43%, this minimum value appears at wavelength
of 1600nm, a maximum value of 82.22% can be observed at wavelength of 1570nm. Because of the main lobe
dominates in the whole range, the emitting efficiency of the main lobe is close to the efficiency value in Fig. 4 (e). As
discussed in part 2, the high efficiency is contributed by both the end-fire mechanism and the SiO2 antireflection
coating.
The tuning function with purely horizontal steering is achieved by the wavelength tuning only. In this device, it is
not required to have a precise control of the phase in each waveguide, and hence, the number of degree of freedom
required for operation is reduced from N (N is the number of waveguides in each layer) to 1, the operation principle
is high simplified. In the application of Lidar, the traditional mechanical Lidar rotates the whole device to achieve the
horizontal field of view (FOV), and the vertical FOV is achieved by utilizing multiple beam lines vertically, this
requires each beam maintains its vertical angle during the rotation. This device can emit a 2-D converged beam that
can be steered purely horizontally, so it is possible to utilize multiple devices together to build a multi-line solid-state
Lidar.
Fig. 4. Simulation result of the structure in Fig. 1. (a) Horizontal farfield contour map, a clear main lobe steers
24.78°/100nm, two side lobes can be observed, (b) Vertical farfield contour map, only one main lobe exists, no steering
vertically (c) Comparison between the horizontal and vertical angle, (d) Comparison between the horizontal and vertical
FWHM, (e) Coupling efficiency of the total energy emitted.
3.1 Influence of vertical cross-talk
The spacing between each waveguide in horizontal is selected to be 2𝜇𝑚 to eliminate the cross-talk, this is a
consideration of the fact that the phase of light in each horizontal waveguides are different. On the other hand, the
thickness of sandwiched SiO2 are set to be 500nm. Indeed, this thickness cannot fully eliminate the cross-talk between
the waveguides in different layers. However, thanks to the exact same pattern in each waveguide layer, this cross-talk
will not contribute to the side lobes. This is because the phase difference between each layer is zero, and the intensity
of the light in each layer are comparable, so the vertical cross-talk in the whole system is in a dynamic equilibrium:
when the main light pulse in one waveguide induces a delayed pulse in the adjacent waveguide, this waveguide will
also receive a delayed pulse induced by the main pulse from that adjacent waveguide, and since the main pulse in each
waveguide have zero phase difference, the induced delayed pulse in these waveguides also have zero phase difference.
In this case, all the induced pulse can also interfere with each other in the same direction with the out-coupling beam,
so it also contributes to the main lobe. Another simulation is done to confirm this, the result is shown in Fig. 5. In this
simulation, we use 8 Si3N4 layers of 650nm, and 7 SiO2 layers of 300nm, so the OPA still covers a 7.3𝜇𝑚 range
vertically, which is the same with the original structure in Fig. 1.
The horizontal angle steering range shown in Fig. 5 (a) is 23.00°/100nm, this is slightly different from the result
in Fig. 4, the reason for this difference is the waveguide thickness is changed in this structure, so it will change the
effective index of the waveguide; however, the pattern in this structure is the same as the previous one, so the change
is not large. Fig. 5 (b, c) shows the vertical angle steering of this structure, it can be found, even though the SiO2 layers
are only 300nm thick, the vertical angle of the beam is not influenced by the cross-talk. However, the vertical FWHM
and efficiency become larger, this is because that even though the OPA covers the same range vertically, the proportion
of waveguide layers is higher, so compared to the original structure used for Fig. 4, this structure is more close to a
thick slab waveguide with thickness of 7.3𝜇𝑚. While in either case, the results in Fig. 5 is a clear evidence to show
that the vertical cross-talk between waveguides does not influence the angle of emitting beam.
Fig. 5. Simulation result of the thinner SiO2 structure (8 Si3N4 layers with 650nm thickness and 7 SiO2 layers with 300nm
thickness). (a) Horizontal farfield contour map, (b) Vertical farfield contour map, (c) Comparison of vertical angle between
the thinner SiO2 structure and the original structure, (d) Comparison of vertical FWHM, (e) Comparison of coupling
efficiency.
3.2 Engineering of the delay length
We have pointed out that the horizontal convergence of the device can be further enhanced by using more
waveguides in each layer. So, in the real case, the detection resolution of a wavelength tuned Lidar depends on the
steering sensitivity per wavelength and the wavelength tuning resolution of the light source. In this work, we select
6200nm as the delay length of the structure; while in real application, the delay length can be selected larger to increase
the steering sensitivity. Two simulations with delay length of 5400nm and 7000nm are done, the results are shown in
Fig. 6.
The difference between the structures in this simulation is in the pattern of each waveguide layer, so only the
information about the horizontal angle is plotted in Fig. 6. The most important comparison is in (c), in this figure, the
red curve is the same red curve in Fig. 4 (c), the yellow curve is for the structure with 5400nm delay length and the
pink curve is for 7000nm delay length. The steering sensitivity of 5400nm delay length structure is 21.58°/100nm
wavelength, is 24.78°/100nm for the original device with delay length of 6200nm and is 28.32°/100nm for delay
length of 7000nm. This indicates that the steering sensitivity can be changed by selecting different delay length: in
most cases, a larger delay length will be preferred to achieve higher steering sensitivity; while in some cases, if the
wavelength tuning resolution of the light source is limited, it may require a lower steering sensitivity to increase the
detection resolution, this can be done by selecting a smaller delay length. In the meantime, the horizontal FWHM and
coupling efficiency do not change much, this is because the spacing between each array element is kept in all the three
structures.
Fig. 6. Simulation result of structures with different delay length (5400nm and 7000nm). (a) Horizontal farfield contour
map of the structure with delay length of 5400nm, (b) Horizontal farfield contour map of the structure with delay length of
7000nm, (c) Comparison of horizontal angle between the structures with different delay length (original 6200nm, 5400nm,
7000nm), (d) Comparison of horizontal FWHM, (e) Comparison of coupling efficiency.
3.3 Selection of the number of waveguide layers
In this work, we select 6 Si3N4 layers to cover a range of 7.3𝜇𝑚 in vertical direction, this is to ensure the total
vertical size is not larger than the mode field diameter (MFD) of a common single mode fiber. In this structure, the
number of waveguides in each layer can be increased by the beam splitter tree [1], while the number of the waveguide
layers is limited by the MFD of the field. On the other hand, as discussed in Sec. 2, the fabrication of multi-layer
structure will become a challenge when more layers are required. So, the selection of how many layers to fabricate
will be a tradeoff between the fabrication complexity and the device performance. In this work, we also investigate
this parameter. Two structures which are exactly the same as the structure used for Fig. 4 but only different in the
number of waveguide layers are simulated, the results are shown in Fig. 7.
In Fig. 7, only the information about the vertical angle is plotted, and similar to Fig. 6, the blue curve in (c-e) is
exactly the same as the blue and black curve in Fig. 4 (c-e). As discussed before, the phase difference between each
array element in vertical direction is always 0, so it is not a surprise that both the 4-layer structure and 8-layer structure
shows similar farfield steering curve as the original 6-layer structure. However, in Fig. 7 (d), it can be found that the
6-layer structure actually shows the best FWHM result: the 4-layer structure shows a much larger FWHM because of
the lack of enough array elements and vertical size; and the 8-layer structure also shows a similar but slightly higher
FWHM. The reason that 8-layer structure doesn't show a better FWHM may because of the vertical cross-talk: it is
not an issue in less layer structure, but may become an issue in more layer structure. In Fig. 7 (c), the vertical angle of
the 8-layer structure still doesn't change much in the whole wavelength range, but the whole curve shifts a little bit to
positive, this may also come from the vertical cross-talk. This suggests that 6 layers may already be enough in this
structure configuration. On the other hand, the 4-layer structure also shows a clear convergence, even though the
FWHM is wider than the 6-layer structure. This may be helpful if there are some applications where the vertical
convergence is not critical, then the 4-layer structure will significantly reduce the fabrication complexity.
Fig. 7. Simulation result of structures with different waveguide layers (4 layers and 8 layers). (a) Vertical farfield contour
map of the structure with 4 waveguide layers, (b) Vertical farfield contour map of the structure with 8 waveguide layers,
(c) Comparison of vertical angle between the structures with different waveguide layers (original 6 layers, 4 layers, 8
layers), (d) Comparison of vertical FWHM, (e) Comparison of coupling efficiency.
4. Conclusion
In this work, a 3-D optical phased array (OPA) with the light exiting from the edge of the device, which is based on
multi-layer Si3N4/SiO2 platform, is numerically demonstrated. The CMOS compatible fabrication strategy of this
device is discussed. The multi-layer structure can enable a high efficiency from both the input coupling and emitting
coupling, the end-fire emitting efficiency can be as high as 82%. A 2-D converged beam is clearly generated in the
farfield pattern of the emitting OPA, which can be steered purely horizontally by wavelength tuning, this suggests a
possibility to apply the device to build a multi-line solid state Lidar. The inter-relationship of the 3-D OPA structure
is studied in detail: the vertical cross-talk doesn't affect the out-coupling angle; the length of delay line can be
engineered to achieve either high steering sensitivity or high steering resolution; the number of waveguide layers can
also be engineered as a trade-off between the fabrication complexity and device performance. The two main features,
high efficiency and single degree of freedom control, are explained in detail. This work is promising for further study
of solid-state beam steering devices and the application of solid-state Lidar, as well as in other emerging areas, such
as wireless communication or optical microscope.
Funding. National Science Foundation (NSF) (NSF-1710885); University of Michigan (U-M); Toyota
Research Institute at North America.
Disclosure. F: Toyota Research Institute at North America.
References
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Based Optical Phased Array Using Electro-Optic pin Phase Shifters," IEEE Photonics Technology Letters, PTL-36183-2019 (2019).
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silicon nanomembrane," Applied Physics Letters, 99(5), 051104 (2011).
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0.050° instantaneous-field-of-view," In 2017 Conference on Lasers and Electro-Optics (CLEO) (pp. 1-2). IEEE (2017, May).
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|
1911.05985 | 1 | 1911 | 2019-11-14T08:28:03 | Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor for Efficient Kesterite Solar Cells | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | Aqueous precursors provide an alluring approach for low-cost and environmentally friendly production of earth-abundant Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. The key is to find an appropriate molecular agent to prepare a stable solution and optimize the coordination structure to facilitate the subsequent crystallization process. Herein, we introduce thioglycolic acid, which possesses strong coordination (-SH) and hydrophilic (-COOH) groups, as the agent and use deprotonation to regulate the coordination competition within the aqueous solution. Ultimately, metal cations are adequately coordinated with thiolate anions, and carboxylate anions are released to become hydrated to form an ultrastable aqueous solution. These factors have contributed to achieving CZTSSe solar cells with efficiency of as high as 12.2% (a certified efficiency of 12.0%) and providing an extremely wide time window for precursor storage and usage. This work represents significant progress in the non-toxic solution fabrication of CZTSSe solar cells and holds great potential for the development of CZTSSe and other metal sulfide solar cells. | physics.app-ph | physics | Coordination Engineering of Cu-Zn-Sn-S Aqueous Precursor
for Efficient Kesterite Solar Cells
Linbao Guo1,3†, Jiangjian Shi1†, Qing Yu1,3, Biwen Duan1,3, Xiao Xu1,3, Jiazheng Zhou1,3,
Jionghua Wu1,3, Yusheng Li1,3, Dongmei Li1,3,4, Huijue Wu1, Yanhong Luo1,3,4,* and Qingbo
Meng1,2,4,*
1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese
Academy of Sciences, Beijing 100190, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese
Academy of Sciences, Beijing 100049, China
3 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing
100049, China
4 Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
† These authors contributed equally to this work: Linbao Guo, Jiangjian Shi.
* E-mail: [email protected], [email protected]
1
Abstract: Aqueous precursors provide an alluring approach for low-cost and environmentally
friendly production of earth-abundant Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. The key is to
find an appropriate molecular agent to prepare a stable solution and optimize the coordination
structure to facilitate the subsequent crystallization process. Herein, we introduce thioglycolic
acid, which possesses strong coordination (-SH) and hydrophilic (-COOH) groups, as the
agent and use deprotonation to regulate the coordination competition within the aqueous
solution. Ultimately, metal cations are adequately coordinated with thiolate anions, and
carboxylate anions are released to become hydrated to form an ultrastable aqueous solution.
These factors have contributed to achieving CZTSSe solar cells with efficiency of as high as
12.2% (a certified efficiency of 12.0%) and providing an extremely wide time window for
precursor storage and usage. This work represents significant progress in the non-toxic
solution fabrication of CZTSSe solar cells and holds great potential for the development of
CZTSSe and other metal sulfide solar cells.
Key words: Kesterite solar cell, aqueous solution, coordination structure, deprotonation
2
Photovoltaics have made great contributions to the release of global energy and
environmental
issues.1 Kesterite Cu2ZnSn(S,Se)4
(CZTSSe)
is one of
the most
environmentally friendly and inexpensive semiconductor light-absorbing materials for
photovoltaic applications because of its non-toxic and earth-abundant components.2-4
CZTSSe exhibits high light absorption of >104 cm-1, an adjustable bandgap matching the
solar spectrum,5-9 high thermodynamic and environmental stability10-12 and a device
manufacturing process compatible with current thin film solar cells.13-18 Solution processing
of the CZTSSe thin film deposition by intermixing of precursor components at the molecular
level has advantages of composition uniformity and morphology control over the
conventional vacuum technique.19-22 The hydrazine solution approach, with the advantages of
high reduction and coordination ability,23, 24 has resulted in the most efficient CZTSSe solar
cells.25 These positive results have encouraged scientists to explore the green solvent
technique for CZTSSe fabrication, an ultimate trend toward non-vacuum semiconductor
device production,26-28 which has led to the development of a variety of solvent systems.29-32
Certainly, among these systems, the aqueous system is the most alluring candidate from the
perspective of safety, environmental effects and cost.
As early attempts at aqueous precursor systems, metal salt precursor routes such as chemical
bath deposition (CBD),33 successive ionic layer adsorption and reaction (SILAR)34, 35 and
electrochemical deposition have been explored.36, 37 Spin coating using a metal salt-thiourea
solution has yielded moderate efficiencies.38, 39 Strategies for synthesizing nanocrystals from
aqueous solutions or preparing colloid dispersions have also been developed. Cell
performance has been obviously improved through pre-synthesis of the colloid dispersion and
detailed adjustment of the element composition.40, 41 However, the resulting device efficiency
is still much lower than that of the organic systems used to date.42 This may arise from
residual anions such as chloride ions and long-chain stabilizers, which have a significant
impact on CZTSSe crystallization.43-46 In addition, these aqueous precursor solutions usually
suffer from low stability since the formed metal-thiourea complexes and the dispersed
colloids easily precipitate due to the lack of strong solute-solvent interactions.47 Therefore,
more judicious engineering of the CZTSSe aqueous precursors is desired to increase the
current device performance.
3
Generally, metal sulfide compounds or complexes are insoluble or easily precipitate within an
aqueous solution due to poor hydration.48 Thus, molecular engineering of organic ligands
with hydrophilic groups may help stabilize CZTSSe (or Cu, Zn and Sn) aqueous precursors.
Thiols engage in strong coordination interactions with metal cations and have been widely
used in the chemical synthesis of metal sulfide films in non-aqueous precursor systems.49-51
Thiols with hydrophilic groups, such as carboxyl, hydroxyl and amine moieties, should be
useful in constructing CZTSSe aqueous precursors.52 Thioglycolic acid (TGA), which has a
lower GHS risk level and low cost, is the most promising water-soluble ligand.53 Owing to
these potential advantages, TGA was once used for aqueous CZTSSe precursor
preparation.54-56 However, the resulting efficiency of 7.38% is still much lower than that of
the hydrazine and other organic systems. This mainly arises because (1) the fundamental
coordination chemistry of this aqueous system has not been clearly understood and (2) that
how to precisely manipulate the complexes structure of TGA-metal to facilitate its
application in CZTSSe solar cells has not been studied. Herein, we systematically investigate
the coordination engineering in the Cu-Zn-Sn-S aqueous precursor solution. The competition
between metal-S and metal-COO coordination interactions has been manipulated by adjusting
the deprotonation degree of TGA in solution. In the optimal structure, the metal cation is
adequately coordinated with thiolate anions, and the carboxylate anions are released to
become fully hydrated, thus facilitating the formation of an ultrastable metal-TGA aqueous
solution and improving the nucleation and crystallization of the CZTSSe thin film. Our
strategies enable the fabrication of CZTSSe solar cells with a remarkable efficiency of 12.2%
and a certified efficiency of 12.0%, which is the best result for CZTSSe solar cells among the
aqueous precursor systems investigated to date. This significant progress in the non-toxic
solution fabrication of CZTSSe solar cells brings great promise for the future development of
CZTSSe solar cells.
Results and Discussion
Coordination competition between metal-S and metal-O
As a preliminary attempt, metal oxides, such as CuO, ZnO and SnO, were added to an
aqueous TGA solution, and the mixture was continuously stirred for several days.
4
Unfortunately, these metal oxides have limited solubility in the TGA solution (Supplementary
Figure 1) and the obtained mixtures cannot be used as precursors for CZTSSe film deposition.
Nonetheless, we found chemical reactions had occurred within these solid-liquid mixtures,
and new complexes formed, as evidenced by the apparent colour change of the added solids.
For instance, the colour of the CuO powder changed from black to white, that of SnO
changed from black to light brown, and the precipitate in the ZnO system remained white but
fluffy (Figure 1(a)). These results are positive because chemical or coordination reactions are
usually the first step in the dissolution of metal oxides, sulfides or elementary substances.
Figure 1. Chemical reactions between metal oxides and TGA. (a) Photographs of the
metal oxide-TGA reaction products in water. (b) Fourier transform infrared spectra of the
collected products and pure TGA. Characteristic peaks and their corresponding vibration
modes that can reflect the reaction processes are marked by dashed lines and arrows. The
change in the atomic valence of Cu or Sn arose from redox reactions with TGA or di-TGA. (c)
Proposed structures of the metal oxide-TGA insoluble products. Within these structures,
almost all the carboxylate groups are coordinated to metal atoms rather than exposed to the
surrounding water molecules to facilitate dissolution.
Chemical reactions between these metal oxides and TGA in an aqueous solution were
5
30002500200015001000Sn(IV)-TGAZn-TGACu(I)-TGA (S-H) Transmitance (a.u)Wavenumber (cm-1) (COOH)TGA (COO-)SnO-TGAZnO-TGACuO-TGASn(SCH2COO)2Zn(SCH2COO)Cu(HSCH2COO)(a)(b)(c) investigated by Fourier transform infrared (FTIR) spectroscopy of the precipitation products
(Figure 1(b)). Notably, Cu(II) was reduced to Cu(I) in the presence of excess TGA, resulting
in the formation of HOOCCH2S∙SCH2COOH (di-TGA) as a byproduct.57 The presence of
di-TGA was confirmed according to 13C nuclear magnetic resonance (NMR) spectra of the
supernatant (Supplementary Figure 2). We further found that Sn(II) can be oxidized to Sn(IV)
by the di-TGA while generating TGA as coordinating ligand. When both Cu(II) and Sn(II)
were present in the system, a redox reaction occurred between them to form Cu(I) and
Sn(IV).30 Thus to imitate the actual reaction within the Cu-Zn-Sn-S precursor in the spectra
study of individual metal oxide-TGA systems, stoichiometric di-TGA was added to oxidize
Sn(II) to Sn(IV). In the spectra of pure TGA, characteristic absorption bands for both the S-H
and COOH groups are clearly observed at ~2570 cm-1 and ~1714 cm-1, respectively.58-61
Changes in the absorption bands are observed after the reaction. First, the disappearance of
the S-H stretching vibration in the spectra of the ZnO-TGA and SnO-TGA products implies
that the S-H group was deprotonated, allowing S to coordinate to the metal atom.58 This
change was realized through a metal oxide-thiol reaction, releasing H2O as another product.
Second, a new peak at ~1570 cm-1 is observed for all three solid products, which mainly
arises from the asymmetric stretching of COO- and is accompanied by a symmetric stretching
peak in the low-frequency region,58, 61 as depicted by arrows in Figure 1(b). This FTIR
spectral change indicates that the COOH group was also deprotonated through the metal
oxide-acid reaction, resulting in coordination between the oxygen (COO- group) and the
metal atoms. Unlike the reaction products of ZnO and SnO with TGA, the products of the
reaction with CuO still gave rise to a S-H absorption band, most likely because Cu
coordinated only with COO- to form HSCH2COOCu at low pH.62 On the basis of these
spectral signatures, possible reactions between TGA and these metal oxides were proposed
(Supplementary Scheme 1), and possible structures of the produced metal-TGA complexes
are presented in Figure 1(c). It is clear that both deprotonated thiol and carboxyl groups
coordinated to Sn and Zn, while only the carboxylate group coordinated to Cu. In these
structures, the polarity of the carboxylate group is significantly weakened, and its hydrophilic
characteristics cannot be fully expressed. Therefore, to enhance the solubility of the
metal-TGA complexes, the carboxylate group must be adequately released to be hydrated by
6
the surrounding water molecules by substituting the metal-carboxylate coordination with
metal-thiolate coordination.
Figure 2. Coordination engineering route within the aqueous Sn-TGA solution.
Deprotonation of the thiol group could enhance its coordination to the Sn atom and thus
facilitate substitution of the Sn-COO coordination. Different degrees of deprotonation will
result in varied Sn-TGA complexes. Ultimately, the Sn is completely coordinated with the S-
groups, and the COO- is fully exposed to hydrate with the solvent surroundings, which helps
to form a stable Sn-TGA aqueous solution.
Engineering of coordination structures
However, within the acidic or neutral TGA/water environment, metal-thiolate coordination
cannot easily be fully realized because thiol groups are usually difficult to deprotonate to
form R-S- (R: HOOCCH2) with strong metal complexing ability.63-66 Thus, the above desired
substitution process can be achieved only when ionization (i.e., deprotonation) of the thiol
group of the TGA is enhanced.49 Figure 2 schematically presents the O donor and S donor
coordination substitution processes that may occur with increasing TGA deprotonation in the
aqueous metal oxide-TGA solution, where Sn compounds are used as an example. For the
initial state (Sn-TGA-1), a double decomposition reaction occurs between SnO and TGA to
form salt and water, and both oxygen atoms of the carboxylate group are coordinated to the
Sn atom, forming a bidentate carboxylate structure. When the deprotonation degree of TGA
in solution is increased, the highly concentrated and activated R-S- can substitute for one of
the Sn-O coordination bonds of the bidentate carboxylate. This will introduce an additional
Sn-S bond and a free carboxylate terminal group and thus help enhance the hydrophilicity of
7
Increasing the deprotonation degree Coordination substitutionSn-TGA-1Sn-TGA-2Sn-TGA-3Sn-TGA-4Coordination substitutionCoordination substitution the Sn-TGA complex. Upon further deprotonation of the thiol group, more Sn-O coordination
of the bidentate carboxylate can be substituted by Sn-S bonds, forming the Sn-TGA-3
structure and ultimately the Sn-TGA-4 structure. Within Sn-TGA-4, the Sn atom is
completely coordinated by R-S-, and all the carboxylate groups are exposed to water
molecule surroundings. This coordination structure should be able to form a more stable (or
the most stable) Sn-TGA aqueous solution. For the Cu-TGA and Zn-TGA complexes, similar
coordination substitution processes should also be realized (Supplementary Figure 3), thus
helping to prepare stable and effective CZTSSe precursors.
The above coordination substitution processes depend highly on deprotonation of the -SH
group. Increasing the pH of the solution is the simplest, most reliable and most widely used
method to facilitate this process.67, 68 Ammonia (NH3∙H2O) is the best candidate for this
purpose because it does not introduce any metal or carbon impurities and can be easily
removed at relatively low temperatures. These advantages prompted us to use ammonia to
regulate the aqueous system, and positive results were obtained. The molar ratio between
ammonia and TGA was the main variable, while the concentrations of both TGA (4 M) and
the metal (0.4 M) were held constant for simplicity. Distinct variations in the Cu-Zn-Sn-TGA
system were observed when the amount of ammonia was increased (Supplementary Table 1
and Supplementary Figure 4). Specifically, the metal oxides were completely dissolved when
the NH3/TGA ratio approached 1.0, and the solution colour changed from dark amber to light
yellow when the ratio approached 2.0 (Supplementary Figure 5). These phenomena indicate
changes in the metal-TGA complexing structures within the aqueous solution. Solution
Raman scattering and NMR spectroscopies, which are sensitive to coordination structure and
chemical environment, were used to trace the coordination chemistry of this solution
system.51, 69 To obtain comprehensive information, Cu-Zn-Sn-TGA, Cu-TGA, Zn-TGA and
Sn-TGA were all studied in our measurements.
8
Figure 3. Raman scattering and NMR characterizations of coordination structure
variations. (a) Raman spectra of pure TGA and the Cu-Zn-Sn-TGA aqueous solution with
varied NH3/TGA ratios. Signals corresponding to stretching (ν) of COO-, SH and CH2 groups
are marked with dashed lines. (b) Amplified low-wavenumber Raman spectra, illustrating
Sn-O and Sn-S vibrations and their variations with the NH3/TGA ratio. (c) Intensity ratio of
the ν (SH) (Iν(SH)) and ν (CH2) (Iν(CH2)) Raman signals at various NH3/TGA ratios. The
intensity of ν (CH2) (Iν(CH2)) is used as an internal standard here. For the pure TGA solution,
the SH group remains in a protonated state until the ratio is higher than 1.2. (d) Approximate
calculation of the metal-S coordination number according to the Raman intensity difference
between the TGA solution and the metal-containing solution. The metal-S coordination
number increases obviously with the NH3/TGA ratio. (e) 13C NMR spectra of the COOH
group and 119Sn NMR spectra to confirm variations in the coordination structure of Sn-TGA.
The non-solvent NMR signals are marked with 'Δ' or '#'. Dashed lines are visual guides for
changes inducing increasing by NH3/TGA ratio.
Within the wide-region Raman spectra, the characteristic scattering signals attributable to SH
9
Metal-STGACu-335-340-345-350**1.0:11.2:11.5:11.7:1119Sn d (ppm) NH3:TGA2.0:11.3:11.1:10.6:1*182180178176174#1.0:11.2:11.5:11.7:113C d (ppm) NH3:TGA2.0:11.3:11.1:10.6:1#Sn-TGA0.40.81.21.21.41.61.82.0 pure TGA solutions CZTS+0.6 Sn+0.6 Zn+0.4I(SH) / I(CH2)NH3:TGA50010001500200025003000 (COO-)2.0:11.0:1Wavenumber (cm-1)Intensity(a.u.)TGA (CH2) (SH)Cu-Zn-Sn-TGA solution200250300350400TGA+NH32.0:11.3:11.2:11.1:11.0:1Wavenumber (cm-1)Intensity (a.u.)TGA0.3:1 (Sn-S)0.40.81.21.62.01.52.02.53.03.54.04.5Coordination numberNH3:TGASnZn(a)(b)(c)(d)(e)Cu+Zn+SnNH3:TGA and CH2 stretching at ~2580 cm-1 and ~2935 cm-1, respectively, can be seen for all aqueous
solutions (Supplementary Figure 6-7).67, 68 The C=O stretching frequency in the pure TGA
aqueous solution is 1714 cm-1. The apparently depolarized CH2 bending frequency at
1395-1400 cm-1, clearly visible in the un-ionized acid, is present in all states of deprotonation.
Upon ionization of the carboxyl group, the Raman peak at 1395-1400 cm-1 is partially
masked by the very intense symmetrical stretching frequency of the ionized carboxyl, and the
asymmetrical stretching frequency of the latter (1550-1575 cm-1) also appears. The ν (CH2)
intensity at ~2935 cm-1 is almost independent of the amount of ammonia, which is in good
agreement with the unchanged TGA concentration and thus confirms that other optical
properties within the Raman process, such as the light penetration depth and other scattering
processes (e.g., Mie scattering and Rayleigh scattering), have not been influenced by the
solution conditions (Supplementary Figure 7-8). In the pure TGA solution, under a low
NH3/TGA ratio, the ν (SH) intensity remained nearly unchanged, and the ν (COO-) intensity
increased gradually. At higher NH3/TGA ratios, the ν (SH) intensity was significantly reduced.
After addition of the metal oxide, the ν (SH) intensity decreased by a constant value
compared with that of the TGA solution, indicating that deprotonation of the S-H group
occurred and that R-S- coordinated with the metal. In addition, more abundant spectroscopic
signatures arising from Sn atom-associated vibrations were observed in the low wavenumber
region, amplified in Figure 3(b). At NH3/TGA ratios lower than 1.0, strong scattering signals
appeared at ~380 cm-1. These signals abruptly vanished and a slightly lower-frequency
vibration mode appeared at 365 cm-1 when the NH3/TGA ratio exceeded 1.2. At a ratio of 1.1,
these two scattering signals coexisted within the spectrum. Both of these Raman signals can
be attributed to the stretching vibration of the Sn-O bond, while the frequency difference
implies modified coordination geometries,67 as depicted in the inset of Figure 2(b). An
O∙∙∙Sn-O bidentate structure is expected to possess a tighter Sn-O Coulomb interaction and
thus a higher bond stretching frequency. Accompanying the vanishing of this bidentate
structure, new Raman scattering peaks were observed at 240 cm-1 and 330 cm-1. These two
peaks were confirmed to arise from the stretching vibration of the Sn-S bond71-73 by obtaining
Raman spectra of the Sn-mercaptoethanol solution, which possesses only Sn-S coordination
(Supplementary Figure 9). Therefore, based on the changes in the low-frequency Raman
10
scattering signals, we can confirm that the coordination substitution reaction from Sn-O to
Sn-S indeed occurred when the NH3/TGA ratio exceeded 1.0. This finding agrees well with
the substitution processes schematically presented in Figure 2. For the coordination of other
metal atoms, we believe similar processes can also occur, although they cannot be directly
probed by Raman scattering.
This replacement of one of the bidentate carboxylate O atoms by S- consumes more R-S-
groups and thus results in a reduction in the SH concentration (Supplementary Scheme 2),
which can be quantitatively reflected by the ν (SH) intensity in the Raman spectra.64 The CH2
band at 2935 cm-1 was chosen as an internal standard since all the evidence indicated that the
intensity of this band was not substantially affected by the change in the NH3/TGA ratio
(Supplementary Figure 8). For clarity, the initial ν (SH) intensity relative to the ν (CH2)
intensity (Iν (SH)/Iν (CH2)) for these samples is set to be the same by adding certain values. It is
apparent that in the pure TGA solution, the Iν (SH)/Iν (CH2) value remains unchanged when the
ratio is lower than 1.2 and then exhibits an obvious decline, indicating significant
deprotonation of the SH group. When the metal oxides are dissolved, a certain proportion of
SH is consumed in the initial stage to react with metal oxides and coordinate to the metal
atoms. At low NH3/TGA ratios of <0.9, this initial Iν (SH)/Iν (CH2) value remains constant,
implying an unchanged metal-TGA coordination structure. Compared to the solvent itself,
this Iν (SH)/Iν (CH2) value begins to decrease at an obviously lower NH3/TGA ratio of ~0.9,
implying that the coordination substitution (from metal-S to metal-O) accelerated the
pH-induced deprotonation of the SH group. This result is strong support for the observed
coordination substitution process. From these intensities, we can further estimate the
coordination number of the metal-S (Supplementary Note 1) and trace the variations. Clearly,
the coordination number of all the metal atoms has increased at higher NH3/TGA ratios
(Figure 3d), further confirming the coordination substitution process that we have proposed.
More evidence was gathered from independent NMR characterizations (Figure 3(e)). Within
the Sn-TGA solution, two types of carboxyl 13C chemical shifts were observed at a low
NH3/TGA ratio. The chemical shift at δ = 177 ppm (marked by dashed lines) was attributed to
the free COOH or COO- within the solvent, while another downfield chemical shift at δ=178
ppm (triangles) was attributed to the carboxyl carbon of the Sn-OOC because the donor
11
coordination weakened the shielding effect. Free carboxyl groups existed in all studied
NH3/TGA ratios, while the Sn-OOC NMR signal disappeared when the ratio exceeded 1.0. A
new weak signal appeared at δ = 178.6 ppm (# marks) at a ratio of 1.1 but disappeared at
ratios higher than 1.2. This signal was also ascribed to the Sn-OOC but with a modified
coordination geometry.74 The complete disappearance of the Sn-OOC coordination signal
indicates that the proportion of Sn-O bonds among the Sn-TGA coordination was too low to
be detected when the ratio was higher than 1.3. The 119Sn NMR signal from the bidentate
carboxylate Sn-O bonding was initially observed at δ = -344 ppm (asterisks) and shifted
upfield as the NH3/TGA ratio increased. When the ratio exceeded 1.1, this signal completely
disappeared, and a new NMR signal appeared at a chemical shift of δ = -339.5 ppm. This
large downfield shift also implies a new Sn-TGA coordination structure, which strongly
supports the appearance of the added Sn-S bonds. The Sn-S coordination possesses a long
bond length and thus has a weak shielding effect on the Sn nucleus. Accompanying the Sn-S
bond signal, a shoulder signal also appeared on the downfield side and disappeared at high
NH3/TGA ratios. Finally, broadened and upfield-shifted Sn-S signals dominated the NMR
spectra, demonstrating that the Sn-TGA had a stable coordination structure with a high
density of covalent electrons in the Sn-S bond and fast molecule exchange with the free TGA
in the solution. This fast exchange behaviour indicates that the metal-TGA coordination
system was adequately assimilated into the water molecule surroundings, which should be
helpful for solution stability. Overall, we have realized the dissolution of the Cu-Zn-Sn-TGA
system into an aqueous solution through thiol deprotonation, and the coordination structure
can be adjusted by the NH3/TGA ratio.
12
Figure 4. Morphology of the CZTSSe films. (a) Top-view and (b) cross-sectional scanning
electron microscopy (SEM) images of the CZTSSe films derived from precursors possessing
varied NH3/TGA ratios. Selenization temperature: 520 °C; selenization duration: 15 min.
Scale bar: 1 μm. (c) Selenization duration-dependent morphology evolution of the CZTSSe
films at NH3/TGA ratios of 1.0:1 and 2.0:1, respectively. Scale bar: 2 μm.
Thin film deposition and solar cell performance
These fully soluble solutions with an NH3/TGA ratio of ≥1.0 were used as precursors for thin
film deposition (spin coating), selenization and final fabrication of CZTSSe solar cells. The
NH3/TGA ratio (i.e., Cu-Zn-Sn-TGA coordination structure) significantly affected the
morphology of the CZTSSe film after selenization at 520 °C for 15 min. As in the top-view
scanning electron microscopy (SEM) images, large voids were observed for the samples
derived from the precursors with NH3/TGA molar ratios of 1.0:1 and 1.3:1. A dense and
void-free film surface was realized only when the NH3/TGA molar ratio exceeded 1.7. These
differences are further reflected by the cross-sectional SEM images. For the 1.0-ratio sample,
an interlayer boundary due to the multiple spin coating and severe interlayer separation were
clearly seen in the fine grain layer. This means that mass transport and exchange during the
selenization process were not sufficient for this sample. Comparatively, the 2.0-ratio sample
exhibited a dense-packed fine grain layer as well as a relatively smooth and large top grain
13
1.0:11.3:11.7:12.0:12.3:1NH3:TGA1min5 min10 min15 min1.0:1NH3:TGA 2.0:1(a)(b)(c)NH3:TGA 2.0:11.0:1 layer. These morphological differences arise from the distinct nucleation properties between
these two samples. The 2.0-ratio sample possessed a much higher nucleation velocity and
density than the other samples, serving as an important foundation for subsequent
crystallization and ripening processes.
Essentially, these nucleation and mass transport properties are closely correlated with the
activity of the metal elements within the CZTSSe precursor film. For the sample with a low
NH3/TGA ratio, carboxylate groups occupied a significant proportion of coordination sites
around the metal atoms. The strong binding between the bidentate oxygen and the metal
atoms that remained in the precursor film limited the interdiffusion ability of the metal atoms
and thus suppressed the nucleation and mass transport processes.75 Comparatively, metal
sulfides exhibited much higher reactivity within the selenization process, thus affording better
crystallization morphology.
Figure 5. Solar cell characterizations. (a) Certified current-voltage characteristics of the
CZTSSe solar cell derived from a precursor with an NH3/TGA ratio of 2.0. The cell exhibits
an efficiency of 12.0% under an effective area of 0.16333 cm2. (b) External quantum
14
1.01.31.72.02.32468101214Efficiency (%)NH3:TGA03574524681012Efficiency (%)Precursor storage time (Day)40060080010001200020406080100Wavelength (nm)EQE (%)010203040 Integrated Jsc (mA cm-2)(a)(b)(c)(d)0100200300400500010203040Voltage (mV)Current Density (mA cm-2)Jsc=37.75mA cm-2Voc=466 mVFF=68.5%Efficiency=12.0%Area: 0.16333 cm20.00.51.01.52.0 Power Output (mW) efficiency (EQE) spectrum of the certified cell, giving an integrated short-circuit current
density of ~37 mA cm-2. (c) NH3/TGA ratio-dependent cell efficiency. (d) Cell efficiency as a
function of precursor solution storage time. After storage for 45 days, the precursor solution
can still be used to fabricate efficient solar cells.
CZTSSe
solar
cells were
fabricated with
a
device
configuration
of
glass/Mo/CZTSSe/CdS/ZnO/ITO/Ni/Al. The optimal cell exhibited a high efficiency of 12.2%
in our laboratory measurement (Supplementary Figure 10), which is the highest among the
aqueous precursor systems studied to date and is comparable to that of the DMSO system.42
Certification of these CZTSSe cells yielded a high efficiency of 12.0% (Supplementary
Figure 11) with an effective area of 0.16333 cm2. Integration of the external quantum
efficiency (EQE) of the cell resulted in a short-circuit current density (JSC) of ~37 mA cm-2,
agreeing well with the current-voltage curve. The EQE spectrum indicates that the CZTSSe
film possessed a bandgap of ~1.1 eV (Supplementary Figure 12). The cell exhibited an
open-circuit voltage deficit of ~0.618 V, implying that we still have much room to improve
the cell performance. The correlation between the cell efficiency and the NH3/TGA ratio is
presented in Figure 5(c). High efficiency can be achieved only when metal-S bonds dominate
the coordination (NH3/TGA ratio ≥ 1.7). This on the one hand arises from a better CZTSSe
film morphology and, on the other hand, benefits from a lower material defect density and
slower charge recombination velocity (Supplementary Figure 13). Owing to the stable
metal-TGA coordination structure and its adequate hydration through the exposed carboxyl
groups, the aqueous precursor solution exhibited ultrahigh stability for several months
without the appearance of any solid precipitation or opaque suspensions. These stored
precursors can still be used to fabricate efficient solar cells without any decline in efficiency,
as presented in Figure 5(d). This result highlights another advantage of our system, that is,
precursor stability, which should be considerably higher than those of previous systems based
on nanocrystal or colloid dispersions. Such high precursor stability provides an extremely
wide time window for the industrial production of CZTSSe solar cells.
Conclusions
15
The coordination structure of the metal-TGA has been systematically engineered by
promoting deprotonation of the thiol group. Through engineering, the metal-S bond
dominates the coordination, and the terminal carboxyl group is adequately exposed to
hydration by the surrounding water to form an ultrastable precursor at the molecular level.
This coordination structure affords better CZTSSe nucleation and crystallization and
contributes to reduced electronic defects. These advantages contribute to achieving a
remarkable efficiency up to 12.2% and a certified efficiency of 12.0%. In addition, this
ultrastable precursor provides an extremely wide time window for CZTSSe solar cell
fabrication. These results represent significant progress in the non-toxic solution fabrication
of CZTSSe solar cells and provide great promise for the future development of CZTSSe and
other metal sulfide solar cells.
Experimental Methods
Materials. Copper (II) oxide (CuO, 99.9%) and selenium particle (Se, 99.999%) were
purchased from Zhongnuo Advanced Material Technology Company. Tin(II) oxide (SnO,
99.9%), thioglycolic acid (HSCH2COOH, 98%), cadmium sulfate (CdSO4, 99%), thiourea
(NH2CSNH2, 99%) and dithiodiglycolic acid (di-TGA) ((CH2COOH)2S2, 96%) were
purchased from Aladdin Inc. Zinc (II) oxide (ZnO, 99.99%) was purchased from
Sigma-Aldrich. Ammonia solution (NH3·H2O, 28%) were purchased from Beijing Chemical
Industry Group CO., LTD. All chemicals were used as received without any further
purification.
Solution preparation. All solutions were prepared at room temperature in a N2-filled
glovebox. The solubility limits were determined after overnight stirring. In all solutions for
Raman and NMR characterization, the concentration of TGA was maintained as 4 M and
specific amounts of NH3 was added according to the NH3/TGA ratio. The precursor solution
for CZTS film deposition was obtained by dissolving 0.280 g CuO, 0.195 g ZnO and 0.269 g
SnO in a mixture aqueous solutions of 4 M thioglycolic acid and varied NH3∙H2O.
Metal-TGA complex preparation. Metal oxides (1 mmol) were mixed with 2.0 mL of TGA
and 1.0 mL of water under magnetic stirring at 60 ºC for 2 days. After sufficient reaction, the
16
Metal-TGA complex precipitations were formed. The Metal-TGA complexes were separated
by centrifuging and cleaned with water for 3 times. The Metal-TGA complexes were dried in
vacuum box for 24 h at room temperature.
Film deposition. The precursor film of CZTSSe was deposited on Mo-coated soda lime
glasses (0.3 Ω sq-1, DC-magnetron sputtering deposited) by spin-coating the precursor
solution at 4000 rpm for 20 s in a N2-filled glove box. The as-deposited films were sintered
on a hot plate at 400 °C for 2 min to eliminate organic residues. The spin-coating and
annealing steps were repeated several times until the thickness of the precursor film reaches
1.0 μm. Finally, these thin films were selenized under Se/N2 atmosphere at 520 °C for 15min
in a semi-enclosed graphite-box containing about 0.3 g selenium particles by using a rapid
thermal processing (RTP) furnace (MTI, OTF-1200X-RTP) under nitrogen flow about 80
sccm (the heating rate was about 8.6 °C/s).
Solar cell fabrication. The CZTSSe solar cells were prepared with a structure of
glass/Mo/CZTSSe/CdS/i-ZnO/ITO/Ni/Al. Firstly, an approximately 40 nm thick CdS buffer
layer was deposited onto the selenized CZTSSe film by a chemical bath deposition method.
Then i-ZnO combined with indium tin oxide (ITO) window layers were deposited
successively by radio frequency (RF) magnetron sputtering. Finally, the Ni-Al grid electrode
was thermally through a metal shadow mask as a current collector. Notably, a 110 nm MgF2
antireflection layer was evaporated onto the final cell to enhance the photocurrent. A solar
cell device with an effective area of 0.18 cm2 was separated by mechanical scribing, yielding
9 standard cells on the same substrate.
Characterization. Raman spectra were collected by a Raman spectrometer (LabRAM HR
Evolution, HORIBA), using a 633 nm excitation laser with a power of 6 mW. The FT-IR
spectra were collected by a Fourier Transform Infrared Spectrophotometer (TENSOR27,
Bruker) and the KBr disk method. Solution 13C and 119Sn NMR spectra were recorded on a
Bruker Avance III 400HD or Avance III 500 MHz spectrometer at 100.6 MHz or 186.5MHz.
Spectra were obtained at room temperature with 10% percent of deuteroxide adding for
locking of the main magnetic field. Each experiment of 119Sn, 13C used a 12.5 and 10 μs pulse
width and a 1.0 and 2.0 s relaxation delay and collected 256 scans, respectively. A spectral
window from 350 to -650 and 225 to -25 ppm was used to search for the signals of 119Sn and
17
13C, respectively. δ 119Sn and 13C were referenced to the internal standard of the probe. The
morphologies of the films and devices were obtained by a scanning electron microscope
(S4800-SEM, Hitachi). Current density-voltage (J-V) characteristics of the solar cells were
collected on Keithley 2400 Source Meter under AM 1.5G illumination (1000 W m-2) from
Zolix SS150A solar simulator. The light intensity of the solar simulator was calibrated by a
standard monocrystalline silicon reference solar cell. The external quantum efficiency (EQE)
curve was measured using an Enlitech QE-R test system, where a xenon lamp and a bromine
tungsten lamp were used as the light sources and a certified Si and InGaAs diode was used as
the reference detector. The C-V data was performed at 100 kHz and 14 mV alternating
current (AC) excitation source with direct current (DC) bias ranging from 0.6 V to -1.0 V.
Transient photovoltage spectra of the cell were obtained by a tunable nanosecond laser
(Opotek, RADIANT 532 LD) with an ultralow light intensity of about 10 nJ·cm-2 and
recorded by a sub-nanosecond resolved digital oscilloscope (Tektronix DPO7104) with input
impedances of 1 MΩ.
18
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Acknowledgements
This work is financially supported by the National Natural Science Foundation of China (Nos.
51961165108, 51421002, 51972332, 51627803 , 51872321 and 11874402).
Author contributions
L. Guo, J. Shi, Y. Luo and Q. Meng conceived the idea, designed the experiments and did the
data analysis. L. Guo and Y. Luo did the experiments and the data acquistion. Q. Yu, X. Xu
and J. Zhou contributed to CZTSSe solar cell fabrications. B. Duan, J. Wu and Y. Li
performed SEM, CV and TPV measurements. D. Li and H. Wu supported the CZTSSe
fabricating, characterizations and discussions. L. Guo, J. Shi, Y. Luo and Q. Meng
participated in writing the manuscript. All authors were involved in the discussions and
approved the manuscript. L. Guo and J. Shi have contributed equally to this work.
Competing interests
The authors declare no competing interests.
Additional information
Supplementary information is available for this paper.
26
|
1705.02435 | 1 | 1705 | 2017-05-06T02:54:07 | Thermocompression Bonding Technology for Multilayer Superconducting Quantum Circuits | [
"physics.app-ph",
"cond-mat.supr-con",
"quant-ph"
] | Extensible quantum computing architectures require a large array of quantum devices operating with low error rates. A quantum processor based on superconducting quantum bits can be scaled up by stacking microchips that each perform different computational functions. In this article, we experimentally demonstrate a thermocompression bonding technology that utilizes indium films as a welding agent to attach pairs of lithographically-patterned chips. We perform chip-to-chip indium bonding in vacuum at $190^{\circ}C$ with indium film thicknesses of $150 nm$. We characterize the dc and microwave performance of bonded devices at room and cryogenic temperatures. At $10 mK$, we find a dc bond resistance of $515 n{\Omega}mm^2$. Additionally, we show minimal microwave reflections and good transmission up to $6.8 GHz$ in a tunnel-capped, bonded device as compared to a similar uncapped device. As a proof of concept, we fabricate and measure a set of tunnel-capped superconducting resonators, demonstrating that our bonding technology can be used in quantum computing applications. | physics.app-ph | physics |
Thermocompression Bonding Technology for Multilayer Superconducting
Quantum Circuits
C.R. H. McRae,1, 2 J. H. B´ejanin,1, 2 Z. Pagel,1, a) A. O. Abdallah,1, 2 T. G. McConkey,1, 3 C. T. Earnest,1, 2 J.
R. Rinehart,1, 2 and M. Mariantoni1, 2, b)
1)Institute for Quantum Computing, University of Waterloo, 200 University Avenue West, Waterloo,
Ontario N2L 3G1, Canada
2)Department of Physics and Astronomy, University of Waterloo, 200 University Avenue West, Waterloo,
Ontario N2L 3G1, Canada
3)Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West,
Waterloo, Ontario N2L 3G1, Canada
(Dated: 9 May 2017)
Extensible quantum computing architectures require a large array of quantum devices operating with low
error rates. A quantum processor based on superconducting quantum bits can be scaled up by stacking mi-
crochips that each perform different computational functions. In this article, we experimentally demonstrate
a thermocompression bonding technology that utilizes indium films as a welding agent to attach pairs of
lithographically-patterned chips. We perform chip-to-chip indium bonding in vacuum at 190 ◦C with indium
film thicknesses of 150 nm. We characterize the dc and microwave performance of bonded devices at room
and cryogenic temperatures. At 10 mK, we find a dc bond resistance of 515 nΩ mm−2. Additionally, we show
minimal microwave reflections and good transmission up to 6.8 GHz in a tunnel-capped, bonded device as
compared to a similar uncapped device. As a proof of concept, we fabricate and measure a set of tunnel-
capped superconducting resonators, demonstrating that our bonding technology can be used in quantum
computing applications.
PACS numbers: 03.67.-a, 03.67.Lx, 07.50.Ek, 85.40.Ls, 84.40.Lj
The field of quantum computing1 is experiencing ma-
jor growth thanks to the development of architectures
with ten or more quantum bits (qubits).2,3 The biggest
challenge in the realization of a universal quantum com-
puter is the implementation of extensible architectures
where qubit operations can be performed with low error
rates.4 Among many promising qubit architectures,5–8
those based on superconducting quantum circuits9 are
rapidly reaching a level of maturity sufficient to demon-
strate supremacy of a digital quantum computer over
the state-of-the-art classical supercomputer.10 Elements
of quantum-error correcting codes11,12 have already been
demonstrated in a variety of experiments using supercon-
ducting qubits3,13,14 and a quantum memory has been
realized with quantum states of microwave fields.15
In order to build an extensible quantum computer,
however, many technological advances must first be
demonstrated. Among these, three-dimensional integra-
tion and packaging of superconducting quantum circuits
is emerging as a critical area of study for the realization of
larger and denser qubit architectures. This approach al-
lows the departure from the two-dimensional confinement
of a single microchip to a richer configuration where mul-
tiple chips are overlaid. Three-dimensional integration,
thus, provides a flexible platform for more advanced clas-
sical manipulation of qubits and qubit protection from
a)Present address: Tufts University, Department of Physics and
Astronomy, 574 Boston Avenue, Medford, Massachusetts 02155,
USA
b)Corresponding author: [email protected]
the environment.
In this framework, an architecture
based on multilayer microwave integrated quantum cir-
cuits has been proposed16 and some of its basic elements
realized, showing that high-quality micromachined cav-
ities17 can be used to implement three-dimensional su-
perconducting qubits.18 Leveraging the extensive body of
work developed in the context of classical integrated cir-
cuits, flip chip technology has been adopted to bond pairs
of microchips containing superconducting circuits.19–21
Microfabricated air bridges have been utilized to reduce
on-chip electromagnetic interference.22 High-frequency
through-silicon vias23 and a quantum socket based on
three-dimensional wires4 have been developed to attain
dense connectivity on a two-dimensional array of qubits.
In this article, we demonstrate the experimental im-
plementation of a two-layer integrated superconducting
circuit where two microchips are attached by means of
thermocompression bonding in vacuum. The structures
on the surface of the bottom chip (or base chip) and on
the underside of the top chip (or cap) are fabricated using
standard photolithography techniques. Instead of a dis-
crete set of indium bump bonds, a continuous thin film
of molten indium serves as bonding medium between the
chips. We perform a detailed electrical characterization
of a variety of bonded devices from room temperature
to 10 mK at both dc and microwave frequencies, show-
ing that the bonding technology can be used in quantum
computing applications.
Figure 1 (a) illustrates the geometric characteristics of
a capped device. The base chip consists of an intrinsic
silicon substrate of thickness 500 µm coated by an alu-
2
rial). The base chip and cap are aligned with a horizon-
tal accuracy of less than 10 µm, significantly smaller than
the device's maximum allowed tolerances. The chips are
subsequently compressed by applying vertical pressure
with the fixture lid. At a system pressure of approxi-
mately 10−2 mbar, the chamber is placed for 100 min on
a hot plate at 190 ◦C, above the indium melting temper-
ature (∼ 157 ◦C). Heating in vacuum prevents the for-
mation of thick indium oxide26 and results in a strong
mechanical bond without chemical or physical cleaning
of the indium films prior to bonding. In fact, we found
that bonded samples can withstand several minutes of
high-power sonication and multiple cooling cycles to 77 K
and 10 mK.
Images of a bonded device are shown in
Figs. 1 (b), 1(c), and 1(d).
The dc electrical behavior of a bonded device is charac-
terized using the base chip and cap layouts shown in the
inset of Fig. 2.3 By applying a dc current through ports 1
and 4 and measuring the voltage across ports 2 and 3,
we find a room temperature dc resistance R (cid:39) 2.785 Ω.
This resistance is due to the room temperature resistance
of the aluminum-indium films on both the base chip and
cap as well as the bond resistance between the two chips.
We realize detailed numerical simulations of the device
under test (DUT) by means of ANSYS Q3D Extractor28
and find a theoretical R (cid:39) 1.323 Ω. The discrepancy be-
tween the measured and simulated resistance is likely due
to the bond resistance (not included in the Q3D model),
bond inhomogeneity, or both; possible contributors to
these effects are the presence of native indium oxide be-
fore bonding, inter-diffusion of aluminum and indium, or
a tilt between base chip and cap.
Bond inhomogeneity can be understood by modeling
the five metallic layers of a bonded device – aluminum,
indium, bond region, indium, and aluminum – as a large
set of flux tubes directed from the base chip to the cap.
At room temperature, each tube has a resistance Rtube;
the total resistance R is approximately the parallel re-
sistance of all flux tubes. Flux tubes in an unbonded
region are open circuits with resistance Rtube ∼ ∞ and
cause R to increase. Following this model, the ratio be-
tween measured and simulated resistance indicates that
approximately 50 % of the DUT is bonded. This result is
verified by breaking apart bonded devices and inspecting
optically the surfaces of the bond region (see supplemen-
tary material).
Figure 2 (a) shows a four-point measurement of R as a
function of temperature T for the bonded device shown
in the inset. Below the superconducting transition tem-
perature of aluminum, T (cid:39) 1.2 K, R is approximately
the bond resistance. The data points in the figure are
obtained by measuring the device's current-voltage (I-V)
characteristic curves at various temperatures and fitting
their slope. Figure 2 (b) shows the I-V curve measured
at T (cid:39) 10 mK. We find a critical current intensity for
the aluminum-indium films, Ic (cid:39) 7 mA. An ensemble of
measurements well below Ic is reported in the inset of
Fig. 2 (b). From the least-squares best fit, we obtain a
FIG. 1. Capped device formed using thermocompression
bonding. (a) Cutaway of a capped device, exposing aluminum
[green (dark gray)] and indium [sky blue (light gray)] films.
The CPW transmission line features a center conductor of
width S = 12 µm and gaps of width W = 6 µm. The tun-
nel height is H = 20 µm, with width T = 175 µm. Through
holes in the cap allow electrical connection to the base chip by
means of three-dimensional wires. (b) Macrophotograph of a
capped device. Inset: Microimage of a through hole showing
a conductor trace aligned with a tunnel. (c) Cross-section of
a capped device showing six tunnels (dark gray rectangles).
(d) Detail of a tunnel in (c).
minum film with 150 nm thickness followed by an indium
film of equal thickness. These films are sputtered in situ
in an ATC-Orion 5 sputter system from AJA Interna-
tional, Inc. The coplanar waveguide (CPW) transmis-
sion line visible in Fig. 1 (a) and other on-chip structures
are defined by optical lithography followed by a wet-etch
in Transene A aluminum etchant.1
The cap consists of a 350 µm thick silicon wafer with
tunnels trenched by isotropic reactive-ion etching (RIE)
and through holes formed using a deep RIE process. Af-
ter etching, the cap underside is metallized with the same
aluminum-indium process as the base chip.
The bonding procedure is realized in a custom-made
vacuum chamber with the aid of an aligning and com-
pressing fixture (see details in the supplementary mate-
(a)(b)(c)(d)TWSH 3
FIG. 2. Bond characterization at dc. (a) Resistance R as a function of temperature T for the capped device depicted in the
inset. Inset: Base chip with two aluminum-indium islands separated by a dielectric gap. The fully metallized cap includes a
tunnel which, when the chips are bonded, spans the gap on the base chip. (b) I-V characteristic curve at T (cid:39) 10 mK for the
capped device in (a). Inset: Data and fit [magenta (middle gray)] below Ic.
bond resistance R (cid:39) 50∓2 µΩ, which is less than approx-
imately 515 nΩ mm−2 assuming a 50 % bond area. This
resistance is likely due to the native indium oxide film
initially present on the chips, preventing the bond region
from becoming superconductive at low temperatures.
Figure 3 displays the microwave characterization of
three capped and uncapped devices with layouts shown
in the insets. The measurements are realized by means
of a vector network analyzer (VNA) from Keysight Tech-
nologies Inc., model PNA-X N5242A; details on the mea-
surement setups can be found in B´ejanin et al.4
The measurements in Fig. 3 (a) demonstrate that the
bonding process and the addition of the cap – including
the tunnel mouth – do not noticeably increase reflections,
which are instead dominated by the three-dimensional
wires.4
Figure 3 (b) shows a measurement of the isolation co-
efficient between two adjacent transmission lines (see in-
set). At microwave frequencies a signal injected at port 1
or 2 can leak to ports 3 and 4, generating signal crosstalk.
Due to the three-dimensional wires, signal crosstalk for
the uncapped device is already very low.4 The cap further
reduces crosstalk by more than 10 dB across the entire
measurement bandwidth. These results may have impor-
tant implications to quantum computing, where crosstalk
has been identified as a major source of error.29
Reflection and isolation measurements are performed
at room temperature in order to maintain the DUT refer-
ence planes as close as possible to the VNA ports. How-
ever, the line shown in the inset of Fig. 3 (c) is charac-
terized by a room-temperature loss sufficiently large to
mask any abnormalities in transmission measurements
at microwave frequencies. We therefore measure this line
at ∼10 mK, where both the indium and aluminum films
are in the superconducting state.
Figure 3 (c) shows clean transmission for both un-
capped and capped devices up to f (cid:39) 6.8 GHz. At higher
frequencies, we observe a series of pronounced resonances
in the transmission coefficient of the capped device. The
simulations in Fig. S3 of the supplementary material and
the results in Fig. 3 (a) indicate that these resonances are
not due to the presence of the tunnel. We believe they
are caused by bond inhomogeneity, shown in Fig. S2 of
the supplementary material, resulting in unwanted res-
onances similar to the slotline modes observed by Wen-
ner et al.30
As a proof of concept for quantum computing applica-
tions, we fabricate and measure a set of capped supercon-
ducting CPW resonators. The device layout is sketched
in the inset of Fig. 3 (b), which shows nine λ/4-wave
resonators coupled to line 1− 2 in a multiplexed design.4
The resonators are characterized by measuring their
internal quality factor at ∼10 mK and for a mean photon
occupation number (cid:104)nph(cid:105) (cid:39) 1, similar to the excitation
power used in quantum computing operations. The main
resonator parameters are reported in Table I.31 The mea-
sured data and fits for the second pair of resonators in
Table I are shown in Fig. S4 of the supplementary mate-
rial. Note that the resonance frequency of an uncapped
resonator shifts with the addition of the cap.
In the supplementary material, we determine that the
internal quality factor of a capped resonator is approx-
0123400.511.51234(a)T(K)R(Ω)−20−1001020−40−2002040(b)I(mA)V(mV)−4−2024−12−11−10−9−8I(mA)V(µV) 4
FIG. 3. Characterization at microwave frequencies of the uncapped and capped CPW transmission lines shown in insets; black
lines refer to structures on the base chip and light green (light gray) shades indicate metallized tunnels and through holes in
the cap. Data for uncapped devices is plotted in light green (light gray) and for capped devices in dark blue (dark gray). (a)
Magnitude of the room temperature reflection coefficient at port 1, S11, as a function of frequency f . (b) Magnitude of the
room temperature isolation coefficient between ports 1 and 4, S14, vs. f . (c) Magnitude of the transmission coefficient S21
measured at 10 mK.
imately 1 % larger than that of an uncapped resonator
due to the vacuum participation. However, this effect is
significantly smaller than the quality factor fluctuations
over time32 and, thus, it cannot be resolved in our mea-
surements. In fact, accounting for time fluctuations, the
quality factors for capped and uncapped resonators in
Table I are approximately equal.
In conclusion, we have developed and characterized a
hot thermocompression bonding technology in vacuum
using indium thin films as bonding agent. Our results
show that this technology can be readily used to im-
plement an integrated multilayer architecture, combining
the fabrication advantages of two-dimensional supercon-
ducting qubits9 and the long coherence of micromachined
three-dimensional cavities.17 This bonding technology is
compatible with the quantum socket design, paving the
way toward the implementation of extensible quantum
TABLE I. Resonance frequencies and internal quality factors
f uc
0 , f c
i , respectively, for a set of four uncapped
and capped resonators.
0 and Quc
i
, Qc
f uc
0
(GHz)
4.252
4.448
4.722
4.913
Quc
i
37700
52100
41830
44840
f c
0 (GHz)
4.033
4.982
···
···
Qc
i
20230
22510
···
···
computing architectures as proposed by B´ejanin et al.4
In future implementations, we will improve the bond-
ing procedure by including a cleaning step with an acid
buff to remove native indium oxide prior to bonding.
Additionally, we will use slightly thicker indium films
(∼ 1 µm), a lower bonding pressure (∼ 10−6 mbar), in
vacuo chip alignment and compression, as well as a higher
and more homogeneous compression by means of an hy-
draulic press. Finally, we will add an inter-diffusion bar-
rier between the aluminum and indium films.
See supplementary materials for details on the thermo-
compression bonding setup, bond inhomogeneity, trans-
mission simulations, resonator data and fits, and vacuum
participation.
We acknowledge the Natural Sciences and Engineer-
ing Research Council of Canada and the Canadian Mi-
croelectronics Corporation Microsystems. We thank the
Quantum NanoFab Facility at the University of Waterloo
as well as the Toronto Nanofabrication Centre for their
support with device fabrication, as well as F. Deppe and
J.Y. Mutus for fruitful discussions.
1T. D. Ladd, F. Jelezko, R. Laflamme, Y. Nakamura, C. Monroe,
and J. L. O'Brien, "Quantum computers," Nature 464, 45–53
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Supplementary Materials for
"Thermocompression Bonding
Technology for Multilayer
Superconducting Quantum Circuits"
In this supplementary materials, we provide further de-
tails on the thermocompression bonding setup. We char-
acterize bond inhomogeneity with optical imaging. We
present numerical simulations of the transmission coeffi-
cient at microwave frequencies for various configurations
of capped and uncapped coplanar waveguide (CPW)
transmission lines. We show the measured data and fits
for a capped and uncapped superconducting resonator
at 10 mK. Finally, we calculate the ratio of the internal
quality factor for a capped and uncapped resonator, thus
estimating the effect of vacuum participation.
S1: THERMOCOMPRESSION BONDING SETUP AND
PROCEDURE
Figure S1 shows a computer-aided design of the
custom-made vacuum chamber and aligning-compressing
fixture used for the thermocompression bonding. The
bottom of the chamber is made from a 10 mm thick cop-
per plate, ensuring a high thermal conductivity and heat
capacity. The bottom surface of the plate is mirror pol-
ished each time before placing the chamber on the hot
plate. The top surface features a set of threaded screw
holes, where aligning-compressing fixtures with differ-
ent dimensions can be fixed; the chamber is designed
to process up to 3-in. wafers. The chamber's wall is
a 30 cm high, 3 mm thick hollow cylinder made from
stainless steel, the low thermal conductivity of which en-
sures little or no heating of the top part of the cham-
ber. The top edge of the cylindrical wall is welded to
a 6-in. ConFlat (CF) flange made from 304L stainless
steel.? The CF flange features a knife-edge seal mech-
anism; the sealing element is a fully annealed copper
gasket. The gasket is made from 1/4 hard, high pu-
rity, oxygen-free (OFHC) copper, which allows for sys-
tem pressures as low as 10−12 mbar at operating temper-
atures up to 450 ◦C. A ultra-high vacuum, temperature-
resistant valve is used to connect the CF flange to a
pump. A CF flanged Kodial glass viewport (sealed with
a silver plated copper gasket) permits the observation of
the chamber's interior during processing.
The aligning-compressing fixture is a square washer
with inner dimensions 16.5 mm × 16.5 mm made from
stainless steel and featuring an adjustable edge corner.
This corner can be moved along a groove at the bot-
tom of the washer, allowing alignment between the base
chip and cap. In this work, we use square chips with di-
mensions 15 mm × 15 mm. Note that the base chip is in
direct contact with the copper plate, guaranteeing good
thermalization. The aligning procedure comprises three
steps: First, the base chip is placed inside the washer
at the bottom of the chamber and pushed against the
1
washer's corner opposite to the adjustable corner; sec-
ond, the cap is manually dropped on the base chip, pre-
aligning the chips as accurately as possible; third, the
two chips are aligned with the adjustable corner, which
is finally fixed to the chamber with a screw. The manual
pre-alignment in step two is sufficient to prevent damage
of the on-chip structures due to relative dragging of the
chips during step three. The lid shown in Fig. S1 (b) is
used to apply pressure on the aligned chips by means of
four screws. We find that little pressure is required to
obtain a mechanically strong bond.
After closing the chamber, we evacuate it with a molec-
ular pump from Pfeiffer Vacuum GmbH for 30 min to
reach a system pressure of 1.5 × 10−2 mbar. While pump-
ing we monitor the chamber leak rate, which is typically
on the order of 10−10 mbar L s−1. Once the chamber is
placed on the hot plate, the temperature initially fluctu-
ates reaching a steady state in approximately 10 min; at
that time we start counting 100 min. Pumping is contin-
ued during the entire heating process, as well as during
a cooling period when the chamber is placed to rest on a
thick aluminum plate.
Our bonding procedure is simple and highly repro-
ducible, with a yield of 80 % for a total of 15 bonded
samples.
When performing thermocompression bonding of de-
vices with superconducting qubits, the Josephson tunnel
junctions that make the qubits will be heated at high
temperature.
In order to verify whether this process
damages the Josephson junctions, we fabricate a set of
aluminum-aluminum oxide-aluminum junctions using e-
beam lithography and evaporation. The junctions' area
is 350 nm × 350 nm and their room temperature resis-
tance ∼5 kΩ. We perform a preliminary test by heating
the junctions to 190 ◦C for 5 min at atmospheric pressure,
finding that most of the junctions survive the process.
In addition, we find that the post-heat room tempera-
ture resistance decreases to approximately 4 kΩ. A com-
plete study of heating effects on submicron sized Joseph-
son junctions was performed by Koppinen et al.S2 By
heating the junctions up to 500 ◦C in high vacuum (less
than 10−6 mbar), the authors found a stabilization of the
junctions' tunneling resistance as well as a reduction of
the junctions' rate of aging. These results are very en-
couraging, indicating that the hot bonding process may
even improve the quality of the Josephson junctions.
S2: BOND INHOMOGENEITY
Bond inhomogeneity can be characterized by breaking
apart a bonded device and imaging the base chip and cap
bond surfaces optically, as shown in Fig. S2. The images
refer to the device outlined in the inset of Fig. 3 (c) in the
main text and are taken by means of a handheld digital
microscope.
The indium film within the boundary of the through
holes on the base chip [see Fig. S2 (a)] is heated during
2
FIG. 4. Thermocompression bonding setup.
(b) Aligning-compressing fixture comprising a square
washer, an adjustable edge corner, and a lid. The channels used to evacuate the interior of the washer when tightened to the
chamber's bottom are visible.
(a) Vacuum chamber.
the bonding process, but not bonded to the cap. We can
thus use the color of the indium film in this region as
a reference to discern bonded from not bonded regions.
We determine that the region near the center of the base
chip and cap was bonded well, whereas the area around
the edges of the two chips was not bonded. In this case,
approximately 50 % of the chips' area was bonded well.
We find similar results in other devices. This effect is
likely due to the compressing fixture lid that was designed
to be smaller than the chips' area, thus applying pressure
only to the center of the chips. In the conclusions of the
main text we propose a remedy to this issue.
S3: TUNNEL MOUTH MICROWAVE SIMULATIONS
The edge of a through hole where the cap tunnel begins
(the tunnel mouth) represents a boundary condition for
the electromagnetic field associated with a capped trans-
mission line. The line shown in the inset of Fig. 3 (c) in
the main text is characterized by two of such boundary
conditions. In order to determine whether these condi-
tions generate unwanted resonance modes, we simulate
the transmission coefficient S21 for this line and com-
pare it to that of an uncapped line and of a capped line
without tunnel mouths (i.e., covered by an infinitely long
tunnel). The numerical simulations are performed with
ANSYS HFSS,? assuming perfect conductors and loss-
less CPW transmission lines with equal geometric char-
acteristics.
The graphs displayed in Fig. S3 reveal almost perfect
transmission for the three simulated configurations, with
less than 0.1 dB of loss due to slight impedance mismatch.
We can safely conclude that the unwanted resonances
shown in Fig. 3 (c) of the main text are not due to the
presence of the tunnel mouths.
S4: CAPPED SUPERCONDUCTING CPW RESONATORS
Figure S4 shows data and fits for the second pair of un-
capped and capped superconducting resonators reported
in Table 1 of the main text. The displayed data for the
capped resonator is the ensemble average of 2 measured
traces, whereas only one trace is measured for the un-
capped resonator. In both cases, each data point is ob-
tained setting the vector network analyzer (VNA) to an
intermediate frequency bandwidth ∆fIF = 1 Hz.
S5: VACUUM CONTRIBUTION TO CAPPED
RESONATORS QUALITY FACTOR
In this section, we estimate the effect of a metallized
cap on the internal quality factor Qi of a superconduct-
ing CPW transmission line resonator. The addition of a
grounded cap above a CPW resonator forces some of the
electric field lines to be distributed from the base chip
(a)(b) 3
FIG. 5. Optical characterization of bond inhomogeneity. (a) Image of the base chip after bonding. The marks left by the
three-dimensional wires on trace 1 and 2 are clearly visible. (b) Image of the cap after bonding.
to the cap, away from the base chip substrate. This in-
creases the contribution of vacuum to the mode volume of
a capped resonator compared to the case of an uncapped
resonator. Assuming all metallic structures to be perfect
conductors, the internal quality factor is solely due to di-
electric losses and, thus, it can be found by inverting the
loss tangent as,S5
Qi =
,
(1)
ε(cid:48)
ε(cid:48)(cid:48)
e
e
e − jε(cid:48)(cid:48)
where εe = ε(cid:48)
e is the effective electric complex per-
mittivity of the CPW transmission line with real and
e and ε(cid:48)(cid:48)
imaginary parts ε(cid:48)
e , respectively (j2 = −1).
The effective electric permittivity of a capped CPW
transmission line can be calculated using Eq. (2.39) in
SimonsS5
e = 1 + q3 (εr1 − 1)
εc
,
(2)
where q3 is the partial filling factor dependent on the
device geometry [see Eq. (2.40) in SimonsS5] and εr1 =
r1 − jε(cid:48)(cid:48)
ε(cid:48)
r1 is the relative electric complex permittivity of
the base chip substrate (in our case silicon) with thick-
ness h1. Hereafter, we assume h1 → ∞ (a reasonable
approximation as the silicon substrates are 500 µm thick,
much thicker than any of the other structures; see main
text for all relevant dimensions). Note that Eq. (2) is ap-
plicable as the tunnel sidewalls are much farther away
from the conductor than the in-plane ground planes,
T (cid:29) H (see Fig. 1 in the main text).
Inserting Eq. (2) into Eq. (1), we obtain the capped
internal quality factor
Qc
i =
r1 − 1)
1 + q3 (ε(cid:48)
q3ε(cid:48)(cid:48)
r1
.
(3)
FIG. 6. Magnitude of the simulated transmission coeffi-
cient S21 as function of frequency f for an uncapped, capped
without tunnel mouth, and capped with tunnel mouth CPW
transmission line. The chosen frequency range is the same as
in Fig. 3 (c) of the main text.
In the case of an uncapped CPW transmission line, the
effective electric permittivity is given byS5
εuc
e =
1 + εr1
2
(4)
(a)(b)45678−0.1−0.08−0.06−0.04−0.020f(GHz)S21(dB)UncappedCappedwithouttunnelmouthCappedwithtunnelmouth 4
FIG. 7. Uncapped (left panels) and capped (right panels) resonator measurements (dots) at low power [i.e., (cid:104)nph(cid:105) (cid:39) 1 (cf. main
text)]. The resonator transmission magnitude S21 (above) and phase angle ∠S21 (below) are fitted as in B´ejanin et al.S4 (light
gray).
and the internal quality factor is given by
Quc
i =
1 + ε(cid:48)
ε(cid:48)(cid:48)
r1
r1
.
(5)
The ratio between the uncapped and capped internal
quality factors is thus
Quc
i
Qc
i
=
(1 + ε(cid:48)
r1) q3
r1 − 1) q3 + 1
(ε(cid:48)
.
(6)
Using the dimensions S, W , and h4 = H reported in
the main text and assuming ε(cid:48)
r1 = 11 for silicon, we
find q3 (cid:39) 0.4722 and, thus, Quc
i (cid:39) 0.99. As a conse-
quence, the increase in vacuum participation due to the
i /Qc
addition of the cap increases the internal quality factor
by approximately 1 %. This is a very small effect for the
devices presented in this work, where other loss mecha-
nisms such as the presence of native indium oxide on both
the base chip and cap, the low quality thin-film sput-
ter deposition, and possibly the bonding procedure itself
outweigh the benefits of a higher vacuum participation.
However, a careful design and a suitable fabrication and
cleaning process may be used to take advantage of this
effect to make capped devices (e.g., qubits) with lower
error rates than similar uncapped devices.
[S1]A new chamber is being designed made from 316LN stainless
−6−4−20S21(dB)−5000500−0.4−0.200.2f−f0(kHz)∠S21(rad)−14−12−10−8−6−4−202S21(dB)−5000500−0.500.51f−f0(kHz)∠S21(rad) steel with low magnetic permeability µ ≤ 1.005, reducing mag-
netic contamination of the samples.
[S2]P. J. Koppinen, L. M. Vaisto, and I. J. Maasilta, "Effects of
annealing to tunnel junction stability," AIP Conference Pro-
ceedings 850, 1639–1640 (2006).
[S3]http://www.ansys.com/products/electronics/ansys-hfss.
[S4]J. B´ejanin, T. McConkey, J. Rinehart, C. Earnest, C. McRae,
D. Shiri, J. Bateman, Y. Rohanizadegan, B. Penava, P. Breul,
S. Royak, M. Zapatka, A. Fowler,
and M. Mariantoni,
"Three-dimensional wiring for extensible quantum comput-
ing: The quantum socket," Physical Review Applied 6 (2016),
10.1103/PhysRevApplied.6.044010.
[S5]R. N. Simons, Coplanar Waveguide Circuits, Components, and
Systems (John Wiley & Sons, Inc., Hoboken, NJ, USA, 2001).
5
|
1710.02359 | 1 | 1710 | 2017-10-06T11:45:44 | A nonlinear theory for fibre-reinforced magneto-elastic rods | [
"physics.app-ph",
"cond-mat.soft"
] | We derive a model for the finite motion of a magneto-elastic rod reinforced with isotropic (spherical) or anisotropic (ellipsoidal) inclusions. The particles are assumed weakly and uniformly magnetised, rigid and firmly embedded into the elastomeric matrix. We deduce closed form expressions of the quasi-static motion of the rod in terms of the external magnetic field and of the body forces. The dependences of the motion on the shape of the inclusions, their orientation, their anisotropic magnetic properties and the Young modulus of the matrix are analysed and discussed. Two case studies are presented in which the rod is used as an actuator suspended in a cantilever configuration. This work can foster new applications in the field of soft-actuators. | physics.app-ph | physics |
A nonlinear theory for fibre-reinforced
magneto-elastic rods
Jacopo Ciambella1 Antonino Favata1 Giuseppe Tomassetti3
June 30, 2021
2 Department of Structural and Geotechnical Engineering
Sapienza University of Rome, Rome, Italy
[email protected]
[email protected]
3 Roma Tre University, Engineering Department, Rome, Italy
[email protected]
Abstract
We derive a model for the finite motion of a magneto-elastic rod reinforced
with isotropic (spherical) or anisotropic (ellipsoidal) inclusions. The particles
are assumed weakly and uniformly magnetised, rigid and firmly embedded into
the elastomeric matrix. We deduce closed form expressions of the quasi-static
motion of the rod in terms of the external magnetic field and of the body forces.
The dependences of the motion on the shape of the inclusions, their orientation,
their anisotropic magnetic properties and the Young modulus of the matrix are
analysed and discussed. Two case studies are presented in which the rod is used
as an actuator suspended in a cantilever configuration. This work can foster
new applications in the field of soft-actuators.
Keywords: Magneto-rheological elastomers, magnetic rods, elastica, instabil-
ity, soft-actuators
1
Introduction
Magneto-Rheological Elastomers (MREs) are a class of functional materials
whose mechanical properties can be controlled upon the application of an ex-
ternal magnetic field by dispersing into a non-magnetic soft matrix, magnetic
hard particles. The use of magnetic field to achieve the actuation offers several
advantages over other type of actuation such as remote and contactless control
as well as the fact that it does not produce any polarization of the media nor
chemical alteration [34]. The magnetization of the reinforcing particles by the
applied field and the subsequent dipolar interactions give rise to an overall de-
formation that is amplified by the low elastic modulus of the matrix, usually
of the order of 10 MPa or less, and by the high susceptibility of the magnetic
particles. This effect is usually referred to as huge magnetostriction [30], but
1
A nonlinear theory for fibre-reinforced magneto-elastic rods
2
must not be confused with the magnetostriction of ferromagnetic crystals, as
the underlying physical mechanism is completely different1.
Several type of magnetic particles are nowadays commercially available in-
cluding ferromagnetic, paramagnetic or diamagnetic fillers [34]. Differences in
their atomic nature convey different macroscopic responses: ferromagnetic and
paramagnetic particles align parallel to the external magnetic field, whereas
diamagnetic particles align perpendicularly [39, 12]; such a different behaviour
has been exploited in a number of applications [46, 27, 29]. Ferromagnetic ma-
terials offer the further advantage of susceptibilities several order of magnitude
higher than those of paramagnetic or diamagnetic substances and this lowers
the magnetic field necessary to achieve the actuation of the samples. This is
one of the reasons that makes the ferromagnetic carbonyl iron powder one of
the most employed fillers in MREs [46, 45, 32, 13, 38].
Owing to such a large availability of filler types and shapes, MREs provide
a much larger design space compared to other type of soft actuators but yet
require models able to account for all these features. Upon final cure, the rigid
particles are locked in place into the elastomeric matrix, and the composite
possess a high degree of flexibility combined with tunable stiffness that makes it
capable of bearing large deformations. Moreover, if an external magnetic field
is applied during the elastomer cross-linking process, the induced magnetization
of the reinforcing particles makes them orient along the field lines in a chain-
like structure which in turn makes the cured composite transversally isotropic.
Therefore, proper models need to be formulated in the framework of large strain
transversally isotropic elasticity coupled with magneto-statics.
Some of the existing theoretical studies account for the micro-geometry of
the composite by evaluating the dipole interactions between adjacent particles
assembled in a chain-like structure [24] or randomly dispersed [7]. However,
strong kinematics assumptions, i.e., uniaxial deformation in the former, small
strains in the latter, are made to obtain closed form expressions of the stress in
terms of the magnetic quantities.
The continuum approach to magneto-elastic response of solids dates back to
the 50s with the pioneering work by Truesdell, Toupin and Tiersten (see [17]
and references therein). These works used a direct approach to formulate the
equilibrium equations based on the conservation laws of continuum mechanics.
Such an approach has the advantage to making possible the coupling between
magneto-elasticity with other evolutionary phenomena whose mathematical de-
scription is not of variational type [35, 36]. The same approach was applied by
Dorfmann and Ogden [16] to formulate the equilibrium equation of magneto-
elasticity at finite strains, and by DeSimone and Podio-Guidugli [15] for ferro-
magnetic solids. Another continuum approach is the one used by Tiersten and
Brown [9] (see also [30]), who deduced balance equations by minimizing the
potential energy in terms of both magnetic and mechanical quantities; in this
approach the equilibrium equations are obtained either as a global minimum or
1In ferromagnetic materials, magnetostriction is caused by the deformation of the crys-
tal lattice whereas in MREs the deformation can either be caused by the particle-particle
interactions or by the dipolar interactions with the external magnetic field.
A nonlinear theory for fibre-reinforced magneto-elastic rods
3
a saddle point of the functional depending upon the choice of the independent
magnetic variables (see [18] for a discussion about this point); the advantage of
this method is that it allows to use variational techiques such as Γ-convergence
to study physically-relevant asymptotic limits or contrained theories (see for
instance [14]. A judicious choice of the potential energy was used in [37, 22]
to study the microstructure evolution in transversally isotropic MREs (see also
[20]). Kankanala and Triantafyllidis [25] reconciliated the two approaches, direct
and variational, by showing that they yield the same governing equations and
boundary conditions if the proper independent magnetic variables are chosen.
A variational formulation was more recently used in [19] to derive a microme-
chanically informed continuum model of MREs that uses a isotropic network
model for polymers and extends it to the anisotropic magneto-elastic response.
A reduced order model for a MR membrane was introduced in [4] by exploiting
the variational approach and assuming uniform and weak magnetization of the
reinforcing spherical particles. These assumptions allowed the reduction of the
integro-differential equations of the general theory, mechanical equilibrium and
Maxwell's equations, to a set of differential equations at each material point.
In the past twenty years, a number of experiments have been carried out on
MREs. Zr´ınyi and coworkers have produced and tested several type of magneto-
active materials including polymer gels [46, 42] and elastomers [43] highlighting
phenomena such as magnetostriction, microscopic instabilities [43] as well as
macroscopic instability [42]. Von Lockette et al. [45] produced a silicone elas-
tomer reinforced with spherical rigid and soft magnetic particles and studied the
bending behaviour of a specimen suspended between the platelets of an electro-
magnets. A similar configuration was exploited by Stanier et al. [41] to study
the behaviour of silicone rubber reinforced with nickel coated carbon fibres; dif-
ferent instability mechanisms were highlighted according to the direction of the
fibres. The magnetic properties of a MRE (PDMS with carbonyl iron parti-
cles) were measured in [13], where two peculiar properties were assessed. First,
the magnetisation response appears to be insensitive to the level of prestrain
at which the specimen was subjected to. Second, the magnetisation response
strongly depends on the relative orientation between the particle chains and the
external magnetic field.
Based upon these experimental works, we derive, in the consistent theoreti-
cal framework of 3D variational magneto-elasticity, the governing equations for
the finite motion of a magneto-elastic rod reinforced with isotropic (spherical)
or anisotropic (ellipsoidal) inclusions. We consider the magnetic moment in the
particles as totally induced by the field, hence as susceptible to changes in the
magnitude or orientation of the applied field [39]. This is, indeed, different than
the problem of permanently magnetized particles [40, 44] where the magneti-
zation of the particle is fixed in magnitude and direction, independent of the
applied field. In doing so, we consider the particles weakly and uniformly magne-
tised and therefore the potential energy of the system is additively decomposed
into a purely mechanical term plus a part accounting for the interaction be-
tween the deformation and the applied field. The particles are further assumed
rigid and firmly embedded into the elastomeric matrix, this in turns makes the
A nonlinear theory for fibre-reinforced magneto-elastic rods
4
demagnetization tensor dependent only on the current orientation of the parti-
cles and not on their stretch. It is further introduced an ad-hoc choice of the
susceptibility that accounts for both magnetically isotropic or anisotropic ma-
terials. These assumptions made possible to derive a closed form expression for
the quasi-static motion of the rod in terms of the external magnetic field and of
the body forces that act on the beam. This approach generalises the one used in
[28, 45, 29, 41], where only a uniform field is considered as well as incorporates
the one used in [48] to study the vibration of carbon-nanotubes embedded into
a non-uniform magnetic field.
It is shown that under certain conditions on the
particle distribution and the applied field, the motion of the beam is governed
by the classical elastica equation with forcing terms controlled by the external
magnetic field.
The structure of the paper is as follows. In Section 2, we derive the effective
magneto-elastic energy of a dilute suspension of magnetic inclusions embedded
into an elastic matrix. This expression is used in Section 3 to derive the energy
of a rod of such a material by carrying out a formal dimensional reduction. The
applications of this theory to two peculiar case studies are discussed in Section
4.
2 The energy of an assembly of magnetic parti-
cles in a non-magnetic elastic matrix
To begin with, let us fix the notation.
In this section we adopt an energetic approach to derive the effective energy of
a composite elastic body obtained by dispersing ellipsoidal magnetic inclusions
into a soft, non-magnetic isotropic matrix, immersed in an applied magnetic
field.
In what follows: f : Ω → Ωc ⊂
E 3 is the deformation of the body from its reference configuration Ω to the
current configuration Ωc, a subset of the Euclidean three-dimensional space
E 3; X is the typical point in the reference configuration whereas x is its image
under the deformation map; accordingly F := ∂f /∂X = ∇f is the deformation
gradient; a(X) is the local orientation of the inclusions at X (see Fig. 1) and Π
is the volume occupied by the inclusion in the current configuration. We denote
by div(·), grad(·) and curl(·) the divergence, gradient and curl operators with
respect to the current coordinates.
The applied magnetic field ha, namely, the field that would be measured in
the absence of the elastic body is the solution of the following static Maxwell's
equations:
divha = 0
and
curl ha = ja
in E 3,
(1)
ja being the imposed current density, which we assume to be unaffected by the
presence of the body.
ite has the form (cid:98)ψel(X, F ) = ψel(F , a(X)) where ψel is an isotropic function:
Since the matrix is isotropic we assume that the strain energy of the compos-
A nonlinear theory for fibre-reinforced magneto-elastic rods
5
ψel(F Q, Qa) = ψel(F , a) for every orthogonal tensor Q. We further make the
hypothesis that the inclusions are:
(I) paramagnetic and the intensity of the field is below the threshold that
causes the saturation of the particle magnetisation;
(II) dilute, so that mutual magnetic interactions can be neglected.
(III) firmly embedded (cf. (24) below) in the non-magnetic soft matrix.
With the foregoing assumptions, we shall argue in this section that the
equilibrium configurations of the body are governed by the following effective
energy:
(cid:0)X,∇f(cid:1) + (cid:98)ψint(f ,∇f , a),
(cid:98)ψel
E(f ) =
(cid:90)
Ω
(2)
where
(cid:98)ψint(x, F , a) = −χ
((cid:98)ac(F , a)·ha(x))2−(cid:98)χ
ha(x)2 with (cid:98)ac(F , a) =
µ0
2
µ0
2
is the interaction energy between the body and the applied field.
F a
F a
(3)
In (3), µ0 = 4π × 10−7H · m−1 (Henry/meter) is the magnetic permeability
of vacuum, whereas χ and (cid:98)χ are suitable effective magnetic susceptibilities that
on their shape (cf. (26) ). The vector ac =(cid:98)ac(X,∇f (X)) is the orientation of
depend on the volume fraction ν of magnetic inclusions (which we assume con-
stant for simplicity), on the magnetic material comprising the inclusions, and
the inclusions in the material part that occupies the position x = f (X) in the
current configuration. Thus, the effective interaction energy has both positional
(since it depends on x) and orientational (since it depends on ac) character.
To justify the expression (3) for the interaction energy, we shall proceed in
three steps:
(a) we derive the magnetic energy (see (10) below) of a magnetic inclusion in
terms of the applied field, of the magnetisation state of the particle and
of the region Π currently occupied by inclusion;
(b) for Π = Π(ac) a prolate spheroid with major axis aligned with the unit
vector ac immersed in a uniform applied field ha(x) =(cid:98)ha, we shall min-
obtain an expression of the energy that depends only on (cid:98)ha, the intensity
imize the magnetic energy with respect to the magnetisation, and hence
of the applied field, and on the relative orientation between the applied
field and the current orientation ac (see (21) below);
(c) we formalize the assumption that the inclusions are firmly embedded in
the matrix by prescribing the dependence of the current orientation ac
of the inclusion in terms of its referential orientation a(X) and of the
deformation gradient F (X); then, we arrive at the expression (3) for the
interaction energy by a suitable volume averaging.
A nonlinear theory for fibre-reinforced magneto-elastic rods
6
2.1 A variational principle for a single particle
As a first step towards the construction of an averaged energy density, we focus
our attention on a single inclusion immersed in an applied field ha. We denote by
Π the three-dimensional domain occupied by the inclusion. The magnetisation
state of the inclusion is then specified by a magnetisation density m supported
on Π, that, in turn, generates a demagnetising field hs = hs{m}. Here we make
use of curly brackets to emphasise that the dependence of the demagnetising field
on m is non-local since hs is defined as the unique square -- integrable solution
of the equations of magnetostatics
div(hs + 1Π[m]) = 0
curl hs = 0
in E 3,
in E 3,
(4)
where 1Π[m] denotes the trivial extension of the vector field m to the three --
dimensional space E 3:
1Π[m](x) =
m(x)
0
if x ∈ Π,
otherwise.
(5)
(cid:40)
We remark on passing out that 1Π[m] may have a jump at ∂Π and hence (4)
should be understood in the sense of distributions.
Under the assumption that the inclusion is paramagnetic, the magnetisation
density obeys the equilibrium equation:2
Υ(x)m(x) = h{m}(x),
x ∈ Π,
(6)
where Υ(x) is the inverse susceptibility tensor at x (a material property) and
h{m} = ha + hs{m}
(7)
is the total magnetic field.
Solving the non -- local equation (6) is equivalent to finding a stationary point
of the magnetic -- energy functional :
m (cid:55)→ M(m; Π, ha) := µ0
Υm · m − ha · m
+
µ0
2
E 3
h{m}2.
(8)
(cid:90)
(cid:26) 1
2
Π
(cid:27)
(cid:90)
The density under integral sign on the right-hand side of (8) is the sum of three
2 Υm · m of the particle,
contributions: (i) the Helmholtz free energy density µ0
which accounts for the interaction between the magnetisation and the hosting
lattice; (ii) the Zeeman energy µ0ha · m, which accounts for the interaction
between the magnetisation and the applied field; (iii) the magnetostatic energy
2 h{m}2 of the magnetic field, whose support is the entire space,
density µ0
which accounts for long -- range magnetic interactions [23].
2This is in fact true even for a ferromagnetic material, provided that it is away from the
saturation magnetisation [1].
A nonlinear theory for fibre-reinforced magneto-elastic rods
7
At variance with the Helmholtz and Zeeman energies, the definition of the
magnetostatic energy involves an integral over the entire space. Yet, by using
(4), it is possible to derive an alternative expression of the magnetic energy
involving an integral extended only on the region Π occupied by the inclusion:
(cid:90)
(cid:90)
(cid:90)
h · h =
ha · ha +
hs · hs + 2
ha · hs.
E 3
E 3
E 3
E 3
(9)
(cid:90)
The first addendum on the right -- hand side of (9) is independent of the state vari-
ables and hence can be omitted from the energy calculation; moreover, the third
addendum vanishes, being the integral over the entire space of the divergence-
free field ha and the irrotational field hs [23]. By making use of (4), again it is
possible to show [8] that the total magnetic energy can be written as
(cid:90)
(cid:18) 1
Υm · m −(cid:16) 1
(cid:19)
(cid:17) · m
M(m; Π, ha) = µ0
2
Π
hs{m} + ha
2
.
(10)
Now, assume that the inverse susceptibility tensor is uniformly positive definite,
that is, there exists positive constant υ such that Υ(x)w · w > υw2 for every
vector w and for every point x ∈ Π. Then the magnetic -- energy functional
(10) is a convex and coercive functional over the space of square -- integrable
magnetisation fields with support in Π. We can then apply the machinery
of the direct method of the calculus of variations to show, by exploiting the
coercivity and the quadratic structure of this functional, that there exists a
unique minimizer. This minimizer is then the unique solution of the Euler --
Lagrange equation (6) of the magnetic -- energy functional.
2.2 The magnetic energy as function of its current orien-
tation
Although finding the solution of the equilibrium equation is a linear and well --
posed problem, the non-locality of the operator m (cid:55)→ hs{m} makes it difficult
to find a handy expression for that solution if the shape Π and the applied field
ha are arbitrary.
It is possible however, to obtain a reasonable estimate of the magnetic energy
of a single particle by making a few simplifications that appear to us to be
consistent with Assumptions (I) -- (III) at the beginning of this section. Precisely:
- we let the magnetic inclusion be a prolate spheroid Π(ac) whose major we
identify with a unit vector ac:
Π = Π(ac),
ac = 1;
(11)
- consistent with the assumption that the applied field ha does not vary over
the mesoscopic scale, which is larger than the typical size of the inclusion, we
restrict attention to the case when the applied field is uniform:
ha(x) =(cid:98)ha,
for all x ∈ E 3;
(12)
A nonlinear theory for fibre-reinforced magneto-elastic rods
8
- we assume that the particle is homogeneous and that material and shape
symmetries coincide, that is to say, the inverse susceptibility tensor is constant
in Π(ac), and given by the following expression:
(cid:98)Υ(ac) = χ−1(cid:107) ac ⊗ ac + χ−1⊥ (I − ac ⊗ ac),
(13)
where χ(cid:107) > 0 and χ⊥ > 0 are the magnetic susceptibilities of the material.
At this stage, we find it convenient to render explicit the dependence of the
magnetic -- energy functional on orientation ac of the inclusion, and, on taking
into account (11) and (12) we replace (10) with:
(cid:16)(cid:98)Υ(ac)m · m − hs{m} · m
(cid:17) − µ0(cid:98)ha ·
(cid:90)
M(m; ac,(cid:98)ha) =
(cid:90)
µ0
2
Π(ac)
m.
Π(ac)
(14)
It is a standard result from magnetostatic that if the magnetisation density is
constant on the ellipsoid Π(ac):
then the restriction of the demagnetizing field in the particle is constant as well,
that is,
in particular, the linearity of the operator m (cid:55)→ ha{m} entails that
m(x) =(cid:99)m for all x ∈ Π(ac),
hs{m}(x) =(cid:98)hs
for all x ∈ Π(ac);
(cid:98)hs = −N (ac)(cid:99)m,
(15)
(16)
(17)
(18)
(20)
(21)
where
N (ac) = N(cid:107)ac ⊗ ac + N⊥(I − ac ⊗ ac)
In view of the foregoing, we conclude that if (12) holds, then the unique
is a positive-definite demagnetizing tensor whose eigenvectors are collinear with
the major axes of Π(ac) [5]. Thus, for constant magnetisation fields having the
form (15) the non-local equilibrium equation reduces to an algebraic equation,
namely, (Υ(ac) + N (ac))(cid:99)m =(cid:98)ha.
solution of (6) is the constant magnetisation field m(x) =(cid:99)m with(cid:99)m given by:
particle in a uniform applied field(cid:98)ha as function of the orientation ac only. This
The representation formula (19) enables us to write the magnetic energy of a
where M (ac) = (Υ(ac) + N (ac))−1.
(cid:99)m = M (ac)(cid:98)ha,
(19)
quantity is defined as the minimum with respect to m of the magnetic-energy
functional
(cid:102)M((cid:98)ha, ac) := min
Since the minimizer on the right-hand side of (20) is constant, we conclude that
m
M(m; ac,(cid:98)ha).
(N (ac) + Υ(ac))−1(cid:98)ha ·(cid:98)ha,
(cid:102)M((cid:98)ha, ac) = −vol(Π)
µ0
2
A nonlinear theory for fibre-reinforced magneto-elastic rods
9
where vol(Π) is the volume of the inclusion Π(ac). By making use of (13) and
(18), we can write(cid:102)M((cid:98)ha, ac) = −vol(Π)
χ (ac ·(cid:98)ha)2 − vol(Π)
χ(cid:98)ha2,
µ0
2
µ0
2
(22)
where
χ = (χ−1(cid:107) + N(cid:107))−1 − (χ−1⊥ + N⊥)−1,
χ = (χ−1⊥ + N⊥)−1.
(23)
This result gives us the dependence of the magnetic energy of a single particle as
a function of its current orientation ac. Our next step is to derive an expression
for the effective energy of a dilute assembly of rigid, identical magnetic particles
firmly embedded in an elastic body.
Remark 1 The expressions of χ and χ in (22) can account for both the mag-
netic anisotropy and the shape anisotropy of the particle. However, the origin
of these two effects are remarkably different: shape anisotropy is caused by
the geometry of the particle whereas magnetic anisotropy can be traced back
to chemical bonds [26, 1]; for example, diamagnetic susceptibilities of the C -- C
bond are smaller in the direction of the bond (χ(cid:107)) than that normal to the bond
(χ⊥), i.e., χ(cid:107) < χ⊥ < 0, that is, the anisotropic diamagnetic susceptibility
defined by χa = χ(cid:107) − χ⊥ is negative.
Remark 2 In the presence of two or more particles, the expression (17) -- (16)
for the demagnetizing field should be changed to take into account the demag-
netizing field generated by the magnetisation distribution outside that particle,
as done in [7] in the framework of linear elasticity. The same procedure cannot
be directly generalised to the case of finite deformations. However, for d the
diameter of a particle, and for D the typical inter-particle distance, the inten-
sity of this contribution is of the order of (d/D)3, which is exactly of the same
order of magnitude of the volume fraction of magnetic particles. Accordingly,
we argue that if the magnetic particles are sufficiently dilute, the mutual inter-
action between particles can be safely neglected. This is indeed a first order
approximation in the volume fraction as shown in[7].
Remark 3 Although the presence of the body alters the total magnetic field
(cf. (7)), the procedure we have used to derive the interaction energy does not
require the explicit calculation of the demagnetising field.
2.3 The effective interaction energy
To justify our spatial averaging procedure, we make the hypothesis that it is
possible to identify a mesoscale (cid:96) over which statistical quantities, such as vol-
ume fraction, are well defined [33]. We assume that over this scale all particles
appear as having constant orientation a and the variation of the magnetic field
can be neglected at this scale (see Fig. 1). This assumption allows us to de-
A nonlinear theory for fibre-reinforced magneto-elastic rods
f
X
x
a
(cid:96)m
(cid:96)
(cid:96) (cid:28) (cid:96)m (cid:28) (cid:96)M
10
ac
Ω
ha
Ωc
forced with ellipsoidal inclusions: macroscale (cid:96)M , i.e., (cid:96)M =(cid:82)
Figure 1: Different homogenisation scales for a magneto-elastic composite rein-
Ω dΩ, mesoscale
(cid:96)m, and characteristic length of the inclusions (cid:96). The variation of the field ha is
assumed negligible at the mesoscale (cid:96)m. The unit vector a(X) and ac(x) are
the common orientations of the inclusions in a mesoscopic neighbourhood of X
and x, respectively.
fine the local orientation a(X) and the local volume fraction ν as fields in the
reference configuration.
In view of our assumption (i), the current orientation ac of an inclusion
belonging to a mescopic neighbourhood of X is (cf. (3)2):
ac =
F (X)a(X)
F (X)a(X) .
(24)
We now argue that the interaction energy per unit referential volume at a typical
point X in the reference configuration is
(cid:102)M(cid:0)ha(f (X)),(cid:98)ac(X, F (X))(cid:1),
ψint(X) =
ν
vol(Π)
(25)
(26)
namely, the product between the referential particle density ν/vol(Π) and the
magnetostatic energy of a single particle, with the latter given by (21) with
(cid:98)ha = ha(f (X)) and ac given by (24). The total magnetic energy is obtained
by integrating the density ψint over Ω; on defining
χ = νχ,
and
(cid:98)χ = ν χ,
and on considering the contribution of the elastic energy of the matrix ψel, we
arrive at (2).
3 A one-dimensional model for planar rods
In this section we consider a thin strip Ω(ε) of length (cid:96), width w and thickness
t(ε) = εt, where ε is a small dimensionless parameter. To describe the defor-
mation of the strip, we introduce a coordinate system (X1, X2, X3) as shown in
Fig. 2, and we let {c1, c2, c3} be the associated orthonormal basis. We assume
A nonlinear theory for fibre-reinforced magneto-elastic rods
11
X2
w
t(ε)
c2
c3
c1
X3
(cid:96)
X1
Figure 2: Geometric properties of the thin strip studied in Sect. 3; (cid:96) is the
length, w the width and t(ε) = εt the thickness.
that the vector a delivering the orientation of the inclusions depends only on
X1 and is contained in the plane spanned by c1 and c2. We therefore write:
a = a(X1),
a · c3 = 0.
(27)
We restrict attention to deformations on the plane spanned by c1 and c2.
Consistent with the assumption of small thickness, we write the deformation as
f (X1, X2) = r(X1) + X2d(X1).
(28)
The vectors r(X1) and d(X1) represent, respectively, the position and the ori-
entation of the typical cross section X1 ∈ (0, (cid:96)). We rule out axial extension
and shear by requiring that
r(cid:48) = 1, d = c3 × r(cid:48)
(29)
where a prime denotes differentiation with respect to the coordinate X1.
On observing that that d(cid:48) = −κr(cid:48), with κ := r(cid:48)(cid:48) · d is the curvature of the
axis, it is not difficult to see that the deformation gradient is
F (X1, X2) = (1 − κX2)r(cid:48) ⊗ c1 + d ⊗ c2 + c3 ⊗ c3.
(30)
Since {r(cid:48), d, c3} is a positively -- oriented orthogonal basis, we have that
F = RU
with
and
(cid:90) (cid:96)
(cid:90) +εt/2
R = r(cid:48)⊗c1+d⊗c2+c3⊗c3
(cid:90)
Ω(ε) (cid:98)ψel(U , a) = w
U = I−κX2c1⊗c1
(31)
is the polar decomposition of the deformation gradient, so that, thanks to the
frame indifference of the elastic energy,
(cid:90)
Ω(ε) (cid:98)ψel(F , a) =
Without loss of generality, we assume that (cid:98)ψel(I, a) = 0 and that the reference
configuration is stress -- free, so that ∂F(cid:98)ψel(I, a) = 0.
(cid:98)ψel(I − κX2c1 ⊗ c1, a) =
F F(cid:98)ψel(I, a)[c1 ⊗ c1] · (c1 ⊗ c1)X 2
Performing a Taylor expansion of the integrand with respect to X2 we obtain
2 + o(X 2
2 ). (33)
κ2
2
∂2
(cid:98)ψel(I−κ(X1)X2c1⊗c1, a(X1))dX2dX1.
0
−εt/2
(32)
A nonlinear theory for fibre-reinforced magneto-elastic rods
12
Since X2 < εh/2, we have o(X 2
2 ) = o(ε2). Thus, on letting
F F(cid:98)ψel(I, a)[c1 ⊗ c1] · c1 ⊗ c1,
(cid:101)E(a) = ∂2
(cid:90) (cid:96)
(cid:101)E(a)Iκ2dX1 + o(ε3), with I =
(34)
wt3
12
,
(35)
arrive at(cid:90)
Ω(ε) (cid:98)ψel(F , a) =
ε3
2
0
and on substituting (33) into (32) and on integrating with respect to X2 we
which is formally identical to the bending energy of a non-homogeneous planar
rod [2].
Next, we turn our attention to the interaction energy. We assume that the
magnetic field depends on ε, and that it scales as
h(ε)
a = εha.
(36)
It is immediately seen that (36) guarantees that bending and interaction energies
scale with the same power of ε. Substituting (31) and (36) into (3) we obtain
(cid:98)ψint(x, F , a) = − ε2 µ0
2
χ
(cid:16)
Ra · ha(x) − κX2(c1 · a)(cid:0)Rc1 · ha(x)(cid:1)(cid:17)2
(cid:8)χ (Ra · ha(x))2 +(cid:98)χha(x)2(cid:9) + o(ε2).
I − κX2(a · c1)2
= −ε2 µ0
2
+(cid:98)χha(x)2
(37)
(38)
(cid:90) (cid:96)
2
0
(cid:90) (cid:96)
Moreover, by (36) we have
(cid:90)
and hence, indeed,
(cid:98)ψint(f , F , a)dX = − ε3
Ω(ε)
h(ε)
a (x) = εha(f (X)) = εha(r(X1)) + O(X2),
(cid:110)
χ(cid:0)Ra · ha(r(X1))(cid:1)2
+(cid:98)χha(r(X1))2(cid:111)
µ0A
dX1 + o(ε3),
(39)
with A = wt. By observing that Ra = (a · c1)r(cid:48) + (a · c2)c3 × r(cid:48), and scaling
back the result by letting ε = 1, we obtain the following 1D energy:
where
int(r, r(cid:48), a) dX1,
0
E 1d(r) =
(cid:98)ψ1d
el (r(cid:48)(cid:48), a) + (cid:98)ψ1d
(cid:98)ψ1d
(cid:101)E(a)Iκ2,
(cid:16)
(cid:98)ψ1d
el (κ, a) =
int(x, r(cid:48), a) = − µ0A
2
1
2
χ((cid:101)ac(r(cid:48), a) · ha(x))2 +(cid:98)χ
(cid:101)ac(r(cid:48), a) = (a · c1)r(cid:48) + (a · c2)c3 × r(cid:48).
µ0
2
ha(x)2(cid:17)
,
are the elastic and the interaction energy of the rod, respectively, with
(40)
(41)
(42)
(43)
A nonlinear theory for fibre-reinforced magneto-elastic rods
13
It is seen that, apart from the standard elastic contribution, the interaction
energy in (42) depends on the mutual orientation of the fibres on the center-
line of the rod and the applied field ha; in this respect, the only part of the
deformation gradient that matters is the rotation R. It is further seen that, for
uniform fields, the latter term in the energy is an additive constant that can be
neglected.
When the fibers are aligned with the axis X1, the density of magnetic energy
is proportional to (ha · r(cid:48))2. This is in accordance with the model proposed in
[11]. More recently, a model of magneto-elastic rods undergoing buckling has
been proposed in [21]. Unlike ours, these theories are direct and not deduced
from the parent three-dimensional one. In order to derive the governing equa-
tions, the authors assume that the local magnetisation depends only on the local
orientation of the rod with respect to the applied field. Moreover, it is postu-
lated that the magnetisation orients along the rod axis (if not strictly orthogonal
to the field), its longitudinal component is constant and fully determined by the
maximum value achieved in the part of the rod that is mostly aligned with the
applied field, e.g., the free tip of the cantilever rod.
4 Case studies
As an application of the theory developed in previous sections, we derive and
solve the governing equation of the cantilever shown in Fig. 3. The rod, subject
to a dead vertical load at its free end, is immersed in a uniform magnetic field
ha = H cos ϕ c1 + H sin ϕ c2,
H > 0.
(44)
This setup may be regarded as describing a prototype of a robotic arm, which
might be used to move the applied load by modulating the applied field.
X2
ha
0
P
ϕ
X1
(cid:96)
Figure 3: A soft robotic arm in its reference configuration. Dark arrows repre-
sent the fibre orientation, i.e., the vector field a, whereas the light blue arrows
are indicative of the applied field ha which forms an angle ϕ with the X1-axis.
We introduce the dimensionless quantities
s = X1/(cid:96) ∈ (0, 1),
r(s) = r((cid:96) s)/(cid:96),
that represent the arch-length coordinate and the parametric curve that de-
scribes the axis of the rod in its typical configuration, respectively. Since the
rod is inextensible, we can adopt the following representation
r(cid:48)(s) = cos ϑ(s)c1 + sin ϑ(s)c2
(45)
A nonlinear theory for fibre-reinforced magneto-elastic rods
14
for the derivative of the curve at the typical point s, and we can express the
curve in question as
r(s) = (1 + u(s))c1 + v(s)c2,
with
u(s) =
(cos ϑ(¯s) − 1)d¯s and v(s) =
(cid:90) s
(cid:90) s
(46)
sin ϑ(¯s)d¯s,
(47)
respectively, the horizontal and the vertical dimensionless displacement.
0
0
In the following, we assume that in the reference configuration the mag-
netic inclusions are parallel to the X1 axis; thus, we set a = c1. We use (40)
to evaluate the contribution to the total energy coming from the interaction
between the body and the applied field.
In doing so, we observe that since
the magnetic field is uniform, the second term on the right -- hand side of (42),
which is purely positional, can be disposed of. We also notice that, by (45)
we have r(cid:48)(cid:48)2 = ϑ(cid:48)2, and that, by (43), the current inclusion orientation is
ac(s) =(cid:101)ac(r(cid:48)(s), c1) = r(cid:48)(s). Accordingly, the 1D energy defined in (40), when
expressed in terms of the angle ϑ, takes the form
(cid:27)
ϑ(cid:48)2 − µ0 χA (cid:96) H 2(cos(ϑ − ϕ))2
ds
(48)
(cid:90) 1
(cid:26) EI
(cid:98)E1d(ϑ) =
1
2
0
(cid:96)
where E = (cid:101)E(c1) is the effective Young modulus.
(cid:98)Etot(ϑ) = (cid:98)E1d(ϑ) +(cid:98)El(ϑ)
Now, the total energy governing equilibria of the cantilever is
where
(cid:98)El(ϑ) = −P v(1) = −P
sin ϑ(s)ds
(cid:90) 1
0
is the potential energy of the applied load.
On introducing the dimensionless parameters
,
p =
P (cid:96)2
EI
,
(49)
we can write (cid:98)Etot(ϑ) =
h2 = µ0 χH 2 A(cid:96)2
(cid:98)E(ϑ), with
EI
EI
2(cid:96)
(cid:90) 1
(cid:90) 1
0
1
2
(cid:0)(ϑ(cid:48)(s))2 − h2(cos(ϑ(s) − ϕ))2(cid:1) ds −
(cid:98)E(ϑ) =
We seek configurations s (cid:55)→ ϑ(s) that render the total energy (cid:98)E stationary.
ϑ(cid:48)(cid:48)(s) − h2 sin(2ϑ(s) + 2ϕ) + p cos(ϑ(s)) = 0
Provided that it is twice -- continuously differentiable, each such configuration is
a solution of the following boundary -- value problem:
for all s ∈ (0, 1),
ϑ(0) = 0,
ϑ(cid:48)(1) = 0.
p sin ϑ(s) ds.
(51)
(50)
0
A nonlinear theory for fibre-reinforced magneto-elastic rods
15
In the rest of this section, we restrict our attention to two cases particularly
relevant, the second case having been considered, in a different format, in [41]
where experiments have also been conducted.
Case 1. Field aligned with the X1-axis (ϕ = 0)
The solution of the boundary value problem (51) is recovered in closed form
only for the two extreme cases, in the absence of the field, i.e., h = 0, or
in the absence of the load p = 0; all intermediate cases must be dealt with
numerically. However, a great deal of insight on the underlying mechanics can
still be gained by studying separately two regimes, one when the applied load
is low, or equivalently the stiffness of the rod is high, i.e., p (cid:28) 1 regardless of
h, the other one when the applied field is small compared to the load, namely
ξ = h2/p (cid:28) 1. We will refer to the former case as low load regime, to the latter
as low field regime.
4.1 Low load regime
We firstly examine the case of a low applied load p (cid:28) 1, which suggests the
following first order perturbation of the solution
ϑ(s) = ϑ0(s) + p ϑ1(s) + o(δ),
which, when substituted into (51), leads to the boundary-value problem:
1 − h (sin(2ϑ0) + 2 p ϑ1 cos(2ϑ0)) + p cos(ϑ0) + o(p) = 0,
ϑ(cid:48)(cid:48)
0 + p ϑ(cid:48)(cid:48)
ϑ0(0) + p ϑ1(0) + o(p) = 0,
ϑ(cid:48)
0(1) + p ϑ(cid:48)
1(1) + o(p) = 0,
(52)
(53)
where for the sake of conciseness, the dependence on s has been left tacit.
By equating the coefficients at the same order, a cascade of boundary-value
problems is obtained, whose first two are
0 − h2 sin(2ϑ0) = 0,
ϑ(cid:48)(cid:48)
1 − 2h2 cos(2ϑ0)ϑ1 = − cos(ϑ0),
ϑ(cid:48)(cid:48)
ϑ0(0) = ϑ(cid:48)
ϑ1(0) = ϑ(cid:48)
0-th order in p
1-st order in p
1(1) = 0.
0(1) = 0
(54a)
We observe that (54a) coincides with the boundary-value problem governing
the equilibrium of a clamped elastica subject to a traction load at its free end,
provided that the rotation is identified with 2ϑ0; accordingly, (54a) admits only
the trivial solution ϑ0(s) = 0. On taking this observation into account, we
deduce from (54b) that ϑ1 solves:
(54b)
whose solution can be easily determined as
1 − 2 h2 ϑ1 + 1 = 0,
ϑ(cid:48)(cid:48)
(cid:32)
1 − cosh(cid:0)√
√
1
2h(s − 1)(cid:1)
cosh
2h
(cid:33)
.
(55)
(56)
ϑ1(s) =
2 h2
A nonlinear theory for fibre-reinforced magneto-elastic rods
16
Using this result, it is possible to evaluate the influence of the applied mag-
netic field on the effective stiffness of the rod. We define this quantity as follows:
s(h) :=
v1(p, h)
∂p
,
(57)
(cid:16) ∂
(cid:90) 1
(cid:17)−1
(cid:12)(cid:12)(cid:12)(cid:12)p=0
(cid:32)
p
h2
(cid:33)
√
2
4 h
−
1
2
√
tanh(
(cid:90) 1
where v1(p, h) is the vertical displacement of the free end. On recalling (47), we
can compute v1 up to the first order in p as
v1 =
sin(p ϑ1(s))ds (cid:39) p
0
0
ϑ1(s)ds =
2h)
,
(58)
that gives the following expression of the effective stiffness
s(h) =
2 h − √
4 h3
√
2 tanh(
.
2h)
(59)
Equation (59) gives us a figure of merit of the rod, thought as an actuator,
and can also be used to calibrate the model with experimental data (see the
discussion at the end of this paper and in particular the caption of Fig.(8)). On
passing, we note that s is a monotonically increasing function whose infimum is
recovered when h → 0. In this limit s → 3, that is exactly the (renormalised)
stiffness of a cantilever subject to a small vertical load applied at the tip.
4.2 Low field regime
By defining the smallness parameters ξ = h2/p (cid:28) 1, the solution of (51) can
be expanded as a power series in ξ. With a slight abuse of notation, we write
ϑ(s) = ϑ0(s) + ξ ϑ1(s) + o(ξ).3 Correspondingly, the following boundary-value
problem is
0 + ξ ϑ(cid:48)(cid:48)
ϑ0(0) + ξ ϑ1(0) + o(ξ) = 0,
ϑ(cid:48)
0(1) + ξ ϑ(cid:48)
1(1) + o(ξ) = 0.
1 − p ξ (sin(2ϑ0) + 2 ξ ϑ1 cos(2ϑ0)) + p (cos(ϑ0) − ξ ϑ1 sin(ϑ0)) + o(ξ) = 0,
ϑ(cid:48)(cid:48)
(60)
By equating the coefficients at the same order, the following problems are de-
rived
0-th order in ξ
1-st order in ξ
ϑ(cid:48)(cid:48)
0 + p cos(ϑ0) = 0,
1 − p sin(ϑ0)ϑ1 = p sin(ϑ0),
ϑ(cid:48)(cid:48)
ϑ0(0) = ϑ(cid:48)
0(1) = 0,
ϑ1(0) = ϑ(cid:48)
(61)
1(1) = 0 . (62)
In solving (61)-(62), we firstly note that the 0-th order problem (61) is the
same as that governing the large deflection of a cantilever with a vertical load
at its free end. This problem was considered, for instance, in [47, 31, 3]. Indeed,
3Due to the different perturbation parameter used in (53) and (60), the symbols ϑ0 and
ϑ1 in subsections 4.1 and 4.2 denote different fields.
A nonlinear theory for fibre-reinforced magneto-elastic rods
17
qualitative properties of the 0-th order solutions can be derived from a phase --
plane analysis, by recasting the problem (61) into a system of two autonomous
first -- order differential equations written as:
(cid:40)
ϑ(cid:48)
0 = κ0,
0 = −p cos ϑ0,
κ(cid:48)
(63)
0(1) = 0). The solution is unique for p < p(1)
where κ0 = ϑ(cid:48)
0 is the curvature. Among the solutions of (63), boundary condi-
tions select those which originate on the vertical axis (ϑ0(0) = 0) and terminate
crit (cid:39) 10.33;
on the horizontal axis (ϑ(cid:48)
for p ≥ p(1)
crit multiple solutions can be found. In particular, the critical points
of the phase plane portrait are located on the horizontal axis and can be either
centres or saddle points: centres comprise the set {(βk, 0) : βk = −π/2 + kπ},
whereas saddle points the set {(βk, 0) : βk = π/2 + kπ}. It is also easy to check
that the quantity f (κ0, ϑ0) = κ2
0/2 + p sin ϑ0 is constant along each integral
curves. Accordingly, along every such curve, we have:
κ2
0(s)
2
+ p sin ϑ0(s) = p sin β =
,
where β = ϑ0(1)
and γ = κ0(0).
(64)
Figure 4 shows the phase diagram and four representative solutions of (61),
crit (cid:39)
and the corresponding shapes, for p higher than the second critical load p(2)
50.97.4
γ2
2
κ0
m = 1
m = 2
m = 4
m = 1
− 3
2
π
m = 2
π
2
ϑ0
m = 3
m = 3
m = 4
Figure 4: Phase diagram of (61) for p = 55 (> p(2)
solutions and the corresponding mode shapes highlighted.
crit) with four representative
The above-mentioned multiplicity of solutions is further illustrated in Fig. 5
where the load p is plotted against the angle β0 = ϑ0(1): when p < p(1)
crit = 10.33
only one equilibrium solution of (61) exists and is represented by the blue
4For p > p(2)
crit Eq. (61) has indeed five solutions but the fifth is not shown in Fig. 4 because
either its phase portrait and the shape are similar to the case m = 4.
A nonlinear theory for fibre-reinforced magneto-elastic rods
18
branch, i.e., the first deformation mode, point A (mode m=1 in Fig. 4); when
p > p(1)
crit, at least other two solutions are found corresponding to points B and
C (m = 2 and m = 3 in Fig. 4). We note that the transition between the
orange and green branches occurs at β0 = −π and x(1) = 0, characterised by
null bending moment at the clamp. The set of solutions for −3π/2 < β0 < −π,
p
C
B
¯p
A
p
(1)
crit
(cid:39) 10.33
− 3
2
π
β
(1)
crit
−π
0
β0
1
2
π
Figure 5: Bifurcation diagram for the 0-th order equation (61) for p against β0 =
crit (cid:39) 10.33; further bifurcations
ϑ0(1). The first bifurcation occurs when p = p(1)
are possible at higher loadings but are not shown in the graph. The dashed
branch represents unstable equilibria.
represented by dashed branch in Fig.5, are unstable equilibria [31] and, conse-
quently, cannot be obtained experimentally. On the other hand, the continuous
branches are all stable equilibria, although those corresponding to negative β0,
i.e., the orange branch, are at a higher energy content and could be more difficult
to attain.
Once the solution of the zero-th order equation ϑ0 is obtained, the 1-st
order equation (62) can be solved numerically. When p < p(1)
crit, the solution
Eq. (61) is unique and so is the solution of (62). In fact, the weak version of
the homogeneous equation associated to (62) is
A[ϑ1(s), ϕ(s)] :=
(ϑ(cid:48)
1(s)ϕ(cid:48)(s)+γ(s)ϑ1(s)ϕ(s))ds = 0,
γ(s) := p sin ϑ0(s),
(cid:90) 1
0
where ϕ(s) ∈ C∞
moreover,
A[ϑ1(s), ϑ1(s)] =
(cid:90) 1
0
(65)
0 ([0, 1]). The bilinear form A[ϑ1(s), ϕ(s)] is continuous and,
(cid:0)(ϑ(cid:48)
1(s))2 + γϑ1(s)2)(cid:1)ds ≥ C(cid:107)ϑ1(s)(cid:107)H 1([0,1]),
(66)
which implies A[ϑ1(s), ϕ(s)] to be coercive; thence, by the Lax-Milgram theo-
rem, the solution of (62) is unique.
A nonlinear theory for fibre-reinforced magneto-elastic rods
19
Case 2. Field aligned with the X2-axis (ϕ = π/2)
When the field is perpendicular to the fibres and no force is applied (ϕ = π/2
and p = 0), the boundary-value problem (51) reduces to
ϑ(cid:48)(cid:48) + h2 sin(2ϑ) = 0,
ϑ(0) = ϑ(cid:48)(1) = 0.
(67)
On observing that (67) can be recast into the equation governing the equilibrium
of a clamped elastica subject to a compressive load, it is immediately seen that
uniqueness of the solution cannot be expected [6]. In this sense, the external
magnetic field has a destabilising effect.
Once again, the qualitative properties of the solutions are better understood
by examining the phase portrait of the system
(cid:40)
ϑ(cid:48) = κ,
κ(cid:48) = −h2 sin(2 ϑ),
(68)
which is shown in Fig. 6 (a); it is noted that the symmetry in the phase portrait is
due to the invariance of the solutions of (68) with respect to the transformation
ϑ = −ϑ. Again, admissible solutions are those which originate on the vertical
axis (ϑ(0) = 0) and terminate on the horizontal axis (ϑ(cid:48)(1) = 0).
Equation (67) can be integrated once to obtain
ϑ(cid:48)2 = h2 (cos(2 ϑ) − cos(2 β)) ,
β = ϑ(1).
(69)
which can be solved by separation of variables. A further integration of the
solution between 0 and 1 yields an implicit relation between β and h; for a
given β, this relation is satisfied for
2m − 1√
2
m ∈ {1, 2, ...},
h =
ek(sin(β)),
(cid:82) π/2
(cid:2)1 − q2 sin2(φ)(cid:3)−1/2
(70)
where ek(·) is the complete elliptic integral of the first kind, i.e., ek(q) :=
dφ [10]. The value of the index m identifies a branch
0
in the bifurcation diagram in Fig. 6 (b). The bifurcation point of the m-th
(2m − 1)
branch has coordinates (0, h(m)
is computed by letting β → 0 in (70).
If h is below the first critical field
h(1)
2) the equation admits only the solution ϑ(s) = 0, i.e., the rod
crit = π/(2
remains straight in its undeformed configuration.
crit ), where the critical field h(m)
√
crit = π
2
2
√
Each branch corresponds to a class of solution curves on the phase plane. In
particular, Fig. 6 (a) shows the trajectories corresponding to the three shapes
A, B, and C in Fig. 6 (b). It is worth noticing that the index m of a branch
coincides with the number of times that the solution curves associated to that
branch intersect the horizontal axis.
Integration of (69) between 0 and 2ϑ(s), 0 < ϑ(s) < π/2, gives the function
ϑ(s) for the first mode shape, i.e.,
ϑ(s) = arcsin
√
sin(β) sn(s
2h, sin2(β))
(71)
(cid:16)
(cid:17)
A nonlinear theory for fibre-reinforced magneto-elastic rods
20
(a)
κ
h
(b)
m = 3
− π
2
m = 2
m = 1
ϑ
π
2
√
5π
2
2
√
3π
2
2
√
π
2
2
0
C
B
A
π
2
β
Figure 6: (a) Phase diagram of (68) in the plane κ = ϑ(cid:48) and ϑ, for h(3)
crit <
h < h(4)
crit with the first three solution trajectories highlighted. (b) Bifurcation
diagram of Problem (67) showing the first three modes and the corresponding
shapes for h(3)
crit. All branches have a common vertical asymptote
for β → π/2. The dashed branches represent unstable equilibria.
crit < h < h(4)
which is expressed in terms of the Jacobi elliptic function sn(·) [10]. By using
(47), the horizontal u1 and vertical v1 displacement of the free end (s = 1) are
obtained by
u1 =
v1 =
π
2 ek(sin2(β))
1
ek(sin2(β))
log
− 1
(cid:18) cos(β)
1 − sin(β)
(cid:19)
.
(72)
(73)
Discussion
The possibility of using the MRE rod in the configuration shown in Fig. 3 as an
actuator strongly relies on the capability of controlling its shape by modulating
the applied field. As such, the appearance of multiple equilibrium configura-
tions could be detrimental unless the transition among them can be accurately
controlled or avoided. In this regard, the stability of the actuator with ϕ = 0
is studied in Fig. 7 by looking at the number of solutions in the p, h plane: the
green area represents the region in which (51) has only one solution, three solu-
tions are found in the orange region, whereas five solutions exist in the yellow
region. The continuous curves bounding the different regions are the critical
loads, that is the loads at which new solutions of (51) appear. It is noted that
crit (cid:39) 10.33, i.e.,
in the range h2 ∈ [0, 20], the values of p(1)
crit (cid:39) 5 for h2 = 20. Such
is the critical load in the absence of the field, to p(5)
a behaviour highlights the destabilising effect that the applied field has on the
equilibrium of the rod: by increasing the field, the second deformation mode
crit decreases from p(1)
A nonlinear theory for fibre-reinforced magneto-elastic rods
21
appears at lower loadings; this in turn suggests that, upon the proper control
of the applied field, the transition between the second to the first mode shape
can be used to realise a magnetic catapult [3].
)
1
(
t
i
r
c
p
20
15
10
5
55
(cid:39) 51
50
p
c
r
i
t
(
2
)
p
(2)
crit
p
(1)
crit
45
40
0
0
5
10
h2
15
35
20
Figure 7: Phase diagram showing the multiplicity of solutions, corresponding
to different colors: for p < p(1)
crit (green region) (51) has only one solution, for
p(1)
crit < p < p(1)
crit at least five
solutions exist. The corresponding shape of the rod are drawn in the insets.
Remarkably, we observe a decrease of the the critical loads p(1)
crit of (51)
with ϕ = 0 for an increasing magnetic field in the range h2 ∈ [0, 20].
crit (orange region) three solutions, for p > p(3)
crit and p(2)
On the other hand, if one wanted to use the actuator to lift a weight attached
to its tip or move the surrounding fluid in a flap-like configuration, a quasi-static
motion with the first mode shape of the configuration with ϕ = 0 (Case 1 in
previous paragraphs) would be the most effective as it would maximise, for given
load and field, the displacement of the free end and at the same time would allow
to continuously control the displacement of the tip by modulating the applied
field. As a matter of fact, a figure of merit of an actuator is its rigidity in the
operative range. For the first mode shape, when the load is low, Eq. (59) gives
the first order approximation of the rigidity. In the low field regime, the stiffness
can be evaluated numerically by solving Eq. (62) with ϑ0 being the first mode
shape; for larger fields, the numerical solution of (51) can be used. The results
of the calculation are plotted for P = pEI/(cid:96)2 against V1 = (cid:96)v1 in Fig. 8 for an
actuator with length (cid:96) = 27.5 mm, thickness t = 3 mm, width w = 7 mm, E =
2.25 MPa and χ = 1.32× 10−4, which are the geometric and material properties
of the actuator tested in [41] made of PDMS reinforced with 6% vol nickel coated
carbon fibres. The dashed lines represents the first order approximation given
by Eq. (59), the dotted line is the solution for h = 0 reported in [31], whereas
the continuous lines are obtained by numerically solving (51). By modulating
the applied field in the range H ∈ [0, 5] kA/m, the rigidity of the actuator
can be changed by two order of magnitude from 4.4 × 10−2N/m to 1.2 N/m;
it is noted that a field value of 10 kA/m can be easily generated by a small
neodymium magnet and its below the saturation threshold of the magnetisation
of the fibres[41], thus the linear magnetic assumption still applies.
A nonlinear theory for fibre-reinforced magneto-elastic rods
22
sh
)
N
m
(
P
H (cid:37)
sl
V1 (mm)
Figure 8: Load, P , against tip vertical displacement, V1, for the configuration
corresponding to mode 1 in Fig. 4. The actuator properties are taken from
[41]. The external magnetic field H ∈ [0, 5] kA/m produces a variation of the
actuator rigidity from sl = 4.4 × 10−2 N/m to sh = 1.2 N/m. The dashed
lines represent the first order approximation (59), whereas the dotted line is the
solution for h = 0 in [31].
The nonlinear model of the rod with ϕ = π/2 and p = 0 (Case 2 in previous
paragraphs) is compared to the experimental data from [41] in Fig. 9 in terms of
the angle at the free end β and the applied field h. The experimental data shows
a sudden increase in the angle in correspondence of a critical value of the field
crit (cid:39) 1.11. For such a value, the undeformed configuration of the rod ϑ(s) = 0,
h(1)
i.e., the trivial solution of (67), becomes unstable and the system releases energy
by jumping to the deformed configuration, which, in this case, has the shape
of the first mode (insets A, B and C of the figure). This behaviour is due to
the interplaying between the elastic bending energy and the magnetic energy
in Eq. (50): by increasing the applied field, the magnetic energy of the system
increases and due to the minus sign in (50), the undeformed configuration passes
from being a minimum of the energy to a maximum, thus the critical transition
observed in the figure occurs. The nonlinear model introduced is able to describe
this transition as well as the shape of the rod in the post-critical regime.
5 Conclusions and Perspectives
The dispersion of hard magnetic inclusions into a soft matrix is a simple tech-
nique to produce soft, remotely controlled actuators that can bear large defor-
mations.
In general, the study of such structures requires the simultaneous solution
of the equations governing the elastic equilibrium and the Maxwell's equations.
However, we have shown that for ellipsoidal and weakly magnetised inclusions
dilutely dispersed into an elastic matrix, the equilibrium of the system is gov-
erned by a reduced energy functional that depends only on the deformation and
A nonlinear theory for fibre-reinforced magneto-elastic rods
23
2.0
1.5
h
1.0
0.5
A
0
0
C
B
A
B
C
5
10
15
β (◦ )
20
25
Figure 9: Applied field h against the angle at the free end β for the experimental
data reported in [41] and the corresponding fitting. The insets show the shape
of the actuator for the three different configurations marked as A (h = 0.12), B
(h = 1.13) and C (h = 1.30) in the graph. The dashed green lines indicate the
direction of the homogeneous magnetic field generated in the experiment by an
electromagnet.
in which the magnetic field acts as a source.
Starting from this result, we have derived the governing equations for the
quasi-static motion of a rod-like actuator. The model can account for large
rotations/displacement of the rod, for the magnetic and shape anisotropy of the
inclusions and for homogeneous and non-homogeneous external magnetic fields.
As such, it is a generalisation of earlier works [29, 21, 41].
Two examples have been studied with the actuator suspended in a cantilever
configuration. In both cases, under the proper hypothesis, the governing equa-
tions have been partially solved in closed form and this has allowed the explicit
computations of the shape of the actuator under the different regimes as well
as of the critical values of the loads and the magnetic field. Different kind of
instabilities were highlighted which can be hindered to exploit novel actuator
configurations.
The proposed nonlinear model can be extended by accounting for inertial
terms that would allow the study large vibrations of slender structures embedded
into a magnetic field with applications ranging from MEMS devices to carbon
nanotubes.
Ethics statement. No ethical considerations apply to this work.
Data accessibility statement. Data underlying this article are not subjected to
accessibility restrictions and can be obtained upon request to the authors.
Competing interests statement. We have no competing interests.
Authors' contributions. All authors have contributed equally to this work.
Funding. This research received no specific grant from any funding agency in the public,
commercial or not-for-profit sectors.
A nonlinear theory for fibre-reinforced magneto-elastic rods
24
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|
1806.00076 | 1 | 1806 | 2018-05-31T20:14:44 | Resonate and Fire Neuron with Fixed Magnetic Skyrmions | [
"physics.app-ph",
"cond-mat.mes-hall",
"cs.ET"
] | In the brain, the membrane potential of many neurons oscillates in a subthreshold damped fashion and fire when excited by an input frequency that nearly equals their eigen frequency. In this work, we investigate theoretically the artificial implementation of such "resonate-and-fire" neurons by utilizing the magnetization dynamics of a fixed magnetic skyrmion in the free layer of a magnetic tunnel junction (MTJ). To realize firing of this nanomagnetic implementation of an artificial neuron, we propose to employ voltage control of magnetic anisotropy or voltage generated strain as an input (spike or sinusoidal) signal, which modulates the perpendicular magnetic anisotropy (PMA). This results in continual expansion and shrinking (i.e. breathing) of a skyrmion core that mimics the subthreshold oscillation. Any subsequent input pulse having an interval close to the breathing period or a sinusoidal input close to the eigen frequency drives the magnetization dynamics of the fixed skyrmion in a resonant manner. The time varying electrical resistance of the MTJ layer due to this resonant oscillation of the skyrmion core is used to drive a Complementary Metal Oxide Semiconductor (CMOS) buffer circuit, which produces spike outputs. By rigorous micromagnetic simulation, we investigate the interspike timing dependence and response to different excitatory and inhibitory incoming input pulses. Finally, we show that such resonate and fire neurons have potential application in coupled nanomagnetic oscillator based associative memory arrays. | physics.app-ph | physics | Resonate and Fire Neuron with Fixed Magnetic Skyrmions
Md. Ali Azam1, Dhritiman Bhattacharya1, Damien Querlioz2, Jayasimha Atulasimha1,3,*
1. Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University.
2. Centre de Nanosciences et de Nanotechnologies, CNRS, Univ Paris-Sud, Université Paris-Saclay,
3. Department of Electrical and Computer Engineering, Virginia Commonwealth University.
91405 Orsay France.
*[email protected]
Abstract: In the brain, the membrane potential of many neurons oscillates in a subthreshold damped
fashion and fire when excited by an input frequency that nearly equals their eigen frequency. In this work,
we investigate theoretically the artificial implementation of such "resonate-and-fire" neurons by utilizing
the magnetization dynamics of a fixed magnetic skyrmion in the free layer of a magnetic tunnel junction
(MTJ). To realize firing of this nanomagnetic implementation of an artificial neuron, we propose to employ
voltage control of magnetic anisotropy or voltage generated strain as an input (spike or sinusoidal) signal,
which modulates the perpendicular magnetic anisotropy (PMA). This results in continual expansion and
shrinking (i.e. breathing) of a skyrmion core that mimics the subthreshold oscillation. Any subsequent input
pulse having an interval close to the breathing period or a sinusoidal input close to the eigen frequency
drives the magnetization dynamics of the fixed skyrmion in a resonant manner. The time varying electrical
resistance of the MTJ layer due to this resonant oscillation of the skyrmion core is used to drive a
Complementary Metal Oxide Semiconductor (CMOS) buffer circuit, which produces spike outputs. By
rigorous micromagnetic simulation, we investigate the interspike timing dependence and response to
different excitatory and inhibitory incoming input pulses. Finally, we show that such resonate and fire
neurons have potential application in coupled nanomagnetic oscillator based associative memory arrays.
I. Introduction
Following the pioneering vison of Carver Mead [1], neuromorphic computing has garnered considerable
interest in recent times due to its potential advantage in dealing with computational problems with ill
conditioned input data, adaptive nature of these systems to mitigate the effect of component failure and
efficiency compared to fully Boolean logic based computation [2–5]. Due to the complex and mixed analog-
digital nature of the brain, a major hurdle towards developing neuromorphic computation platforms has
been finding materials and devices to mimic brain like behavior and developing architectures based on such
systems. Current hardware artificial neural networks are mostly implemented with purely CMOS circuits
and require large number of components to ensure robustness [3,6]. This poses a major challenge for the
scaling and energy efficiency of neuromorphic computation.
Nanomagnetic devices are one of the promising alternatives to implement neuromorphic computing and
other non-von-Neumann like architectures due to their low energy consumption, nonlinear dynamics, and
non-volatility. Many nanomagnetic devices that can potentially form the building blocks of neuromorphic
computing: artificial neurons and synapses, have been proposed [4,7–14]. Among artificial neurons, most emulate
the behavior of (leaky) integrate and fire type neurons [3,10]. In an integrate and fire type neuron, the membrane
potential increases in response to an input spike and fires if it reaches a certain threshold [15]. Therefore, the firing
frequency depends only on the strength of the stimulus. However, in the brain, many neurons also feature
damped or sustained subthreshold oscillation [16–19] of membrane potential. Such neurons therefore show
sensitivity towards the timing of stimulus. Consequently, a strong stimulus may not produce a spiking
output if the incoming stimulus is not in phase with the oscillation of membrane potential, thus providing
an inhibitory function. It also leads to many interesting phenomena such as fluctuation of spiking
probability and selective communication [20]. Such "resonate-and-fire" neurons could also be useful in
different neural networks where computation involves synchronized oscillation of several spin torque nano-
oscillators (SNTOs) for pattern recognition [21]. Such networks come in different versions: for example,
in ref. [21] patterns are encoded by frequency-shift keying (FSK) whereas in most other work [22–24]
patterns are encoded with phase shift keying (PSK), but all of them could benefit from circuits able to detect
synchrony through resonance.
In this work, we investigate the implementation of an artificial resonate-and-fire neuron by utilizing the
magnetization dynamics of a fixed magnetic skyrmion in the free layer of a magnetic tunnel junction.
Magnetic skyrmions (Fig. 1 (a)) are topologically protected spiral spin textures [25,26], which can be
translated by applying small current [27,28] or reversed (in patterned dots) using a small voltage that
controls the magnetic anisotropy [29,30]. Until now, this behavior has been leveraged to propose logic and
memory devices based on magnetic skyrmions [31–35].
While nanomagnetic device based integrate and fire type neurons have been studied extensively, the
resonate and fire type neuron proposed using nanomagnetic devices in this work, is unique to this paper
and would be essential to compare the synchronization in arrays of nanomagnetic oscillators as described
above for applications such as pattern recognition. While various schemes mimicking neuron and synapse
activities have also been proposed utilizing current induced motion of skyrmions [36–39], neuromorphic
devices based on moving skyrmions could have a large foot print and are dissipative as they use current to
move the skyrmions. We previously proposed nanomagnetic memory devices utilizing voltage control of
fixed magnetic skyrmions in the free layer of a MTJ structure [29,40,41] that can alleviate these issues. In
this paper, we use such a voltage control of a fixed skyrmion based scheme to achieve the functionality of
resonate and fire neurons.
The next section describes two "resonate and fire" neuron devices based on the novel mechanism of
resonant oscillations of a skyrmion core due to voltage control of anisotropy: direct voltage control of
magnetic anisotropy (VCMA) and strain mediated voltage control of anisotropy in magnetostrictive
materials. This is followed by a section explaining the modeling of voltage induced magnetization
dynamics, followed by a discussion of skyrmion core oscillation, resonant behavior and application of the
"resonate and fire" functionality for detection of phase and frequency synchronization.
II. Device:
Our proposed device is a MTJ structure in which the circular free layer hosts a fixed skyrmion. We propose
two different devices where application of a voltage modulates the perpendicular anisotropy of the free
layer through two different physical mechanisms. The anisotropy can be modulated via voltage control of
magnetic anisotropy [42–44] in the device shown in Figure 1(b) and voltage generated strain [45,46] in the
device shown in Figure 1(c). Modulation of perpendicular anisotropy in the system induces breathing of
skyrmions. In other words, the skyrmion core increases and decreases in size. This mimics the subthreshold
damped oscillations of resonate and fire neurons. The electrical resistance of the MTJ layer (R2) depends
on the magnetization orientation of the free layer (i.e. the size of the skyrmion core) relative to that of the
fixed layer. For the sake of explanation, let us assume that the orientation of the magnetization of the fixed
layer is antiparallel with respect to the one of the skyrmion core. As the skyrmion core expands during the
breathing, more spins in the free layer will be antiparallel with respect to the fixed layer spins. Therefore,
the resistance of the MTJ structure will increase. We thus propose to use a voltage divider consisting of a
fixed resistor and the voltage controlled MTJ resistance to drive a CMOS buffer from OFF to ON state as
shown in Fig 1.
Figure 1. (a) A core-up skyrmion, color code on the right shows the direction of the spin, (b) Proposed device
structure operated with voltage control of magnetic anisotropy (VCMA) (c) MTJ structure stacked on PZT layer for
strain control of magnetic anisotropy. Note that, CMOS buffer is driven by the MTJ resistance. Therefore, fixed
layer magnetization needs to be opposite to that of skyrmion core.
If the resistance of the MTJ stack increases during skyrmion expansion, potential drop across the MTJ
resistance (R2) will be higher. We can choose the ratio between R1 and R2 such that, at a given threshold
this increase causes the transistor T1 to be turned on and generate a firing pulse. (NOTE: A similar behavior
can be achieved by choosing the fixed layer magnetization orientation to be parallel with respect to the
magnetization orientation of the skyrmion core and driving the CMOS buffer by the potential drop across
resistance R1). In short, if the skyrmion core size increases beyond a threshold, potential drop across the
MTJ stack will produce an input voltage to the CMOS circuit that will exceed the threshold voltage, causing
the buffer to "fire", i.e. produce a high output. In ref. [47] resistance-area product of MTJ was found to be
in the range of 225-650 Ω.μm2 and typical tunnel magneto-resistance ratio between parallel and antiparallel
configuration is 100% [47]. However, in this case, magnetization is oscillating between a skyrmionic state
and a quasi-antiparallel state. Typical CMOS buffer have gating voltage in the range of 1 V. Hence, we can
design a bias voltage (Vbias) and appropriate ratio for R1 to R2. It would be preferable to maximize R1 and
R2 (to minimize standby power dissipation due to Vbias) while ensuring reasonable RC time constant for
resonant operation of the device. In this work, for the sake of simplicity, we do not model the
magnetoresistance change due to skyrmion breathing and the circuit dynamics of the CMOS buffer. In
other words, in Fig 1 (corresponding to both device implementations for the resonate and fire neuron), we
only model the magnetization dynamics of the skyrmions and set a threshold value of average magnetization
along the z-axis (mz_threshold=0.8, magnetization is almost antiparallel to the free layer). For mz_free>
mz_threshold, we consider the CMOS buffer to be in the 'ON' or "high" state and "OFF" or "low" otherwise.
This naturally gives rise to a firing output.
III. Methods
Micromagnetic simulation software MuMax3 [48] was used to perform the simulations where the
magnetization dynamics is found by solving the Landau-Lifshitz-Gilbert (LLG) equation,
(cid:3105)(cid:3040)(cid:4652)(cid:4652)(cid:4652)(cid:1318)(cid:3105)(cid:3047)(cid:3404)(cid:2028)(cid:1318)(cid:3404)(cid:4672) (cid:2879)(cid:3082)(cid:2869)(cid:2878)(cid:3080)(cid:3118)(cid:4673)(cid:3436)(cid:1865)(cid:4652)(cid:4652)(cid:1318)(cid:3400)(cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3032)(cid:3033)(cid:3033)(cid:3397)(cid:2009)(cid:4672)(cid:1865)(cid:4652)(cid:4652)(cid:1318)(cid:3400)(cid:3435)(cid:1865)(cid:4652)(cid:4652)(cid:1318)(cid:3400)(cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3032)(cid:3033)(cid:3033)(cid:3439)(cid:4673)(cid:3440)
where (cid:1865)(cid:4652)(cid:4652)(cid:1318) is the reduced magnetization ((cid:1839)(cid:4652)(cid:4652)(cid:1318)/Ms), Ms is the saturation magnetization, γ is the gyromagnetic
ratio and α is the Gilbert damping coefficient. The effective magnetic field (cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3032)(cid:3033)(cid:3033) is given by,
(1)
(i.e.
Value
Heisenberg exchange coupling and Dzyaloshinskii-Moriya Interaction (DMI). The DMI contribution to
(cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3032)(cid:3033)(cid:3033)(cid:3404)(cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3031)(cid:3032)(cid:3040)(cid:3028)(cid:3034)(cid:3397)(cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3032)(cid:3051)(cid:3030)(cid:3035)(cid:3028)(cid:3041)(cid:3034)(cid:3032)(cid:3397)(cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3028)(cid:3041)(cid:3036)(cid:3046)(cid:3397)(cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3047)(cid:3035)(cid:3032)(cid:3045)(cid:3040)(cid:3028)(cid:3039) (2)
Here, (cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3031)(cid:3032)(cid:3040)(cid:3028)(cid:3034) is the effective field due to demagnetization energy, (cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3032)(cid:3051)(cid:3030)(cid:3035)(cid:3028)(cid:3041)(cid:3034)(cid:3032) is the effective field due to
(cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3032)(cid:3051)(cid:3030)(cid:3035)(cid:3028)(cid:3041)(cid:3034)(cid:3032) is given by [48]:
(cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3005)(cid:3014)(cid:3404) (cid:2870)(cid:3005)(cid:3091)(cid:3116)(cid:3014)(cid:3294)(cid:4674)(cid:3105)(cid:3040)(cid:3301)(cid:3105)(cid:3051),(cid:3105)(cid:3040)(cid:3301)(cid:3105)(cid:3052),(cid:3398)(cid:3105)(cid:3040)(cid:3299)(cid:3105)(cid:3051) (cid:3398)(cid:3105)(cid:3040)(cid:3300)(cid:3105)(cid:3052)(cid:4675) (3)
where (cid:1865)(cid:3053) is the z-component of magnetization and D is the effective DMI constant.
The effective field due to the perpendicular anisotropy, (cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3028)(cid:3041)(cid:3036)(cid:3046), is expressed as [48],
u(cid:4652)(cid:1318) is the unit vector in the direction of the
Saturation Magnetization ((cid:1839)(cid:3046)(cid:3028)(cid:3047))
Exchange Constant ((cid:1827)(cid:3032)(cid:3051))
Perpendicular Anisotropy Constant ((cid:1837)(cid:3048)(cid:2869))
(cid:1834)(cid:4652)(cid:4652)(cid:1318)(cid:3028)(cid:3041)(cid:3036)(cid:3046)(cid:3404)(cid:2870)(cid:3012)(cid:3296)(cid:3117)(cid:3091)(cid:3116)(cid:3014)(cid:3294)(cid:4666)u(cid:4652)(cid:1318).(cid:1865)(cid:4652)(cid:4652)(cid:1318)(cid:4667)u(cid:4652)(cid:1318)(cid:3397)(cid:2872)(cid:3012)(cid:3296)(cid:3118)(cid:3091)(cid:3116)(cid:3014)(cid:3294)(cid:4666)u(cid:4652)(cid:1318).(cid:1865)(cid:4652)(cid:4652)(cid:1318)(cid:4667)(cid:2871)u(cid:4652)(cid:1318)
1(cid:3400) 106 A/m
2(cid:3400) 10-11 J/m
6(cid:3400)105 J/m3
anisotropy
perpendicular
anisotropy in this case). VCMA/strain
effectively modulates the anisotropy
energy density. The resultant change in
uniaxial anisotropy due to VCMA/strain
is incorporated by modulating
1uK while
keeping
this
2uK are first and second
where
order uniaxial anisotropy constants and
Parameters
(4)
1uK and
0.03
3 mJ/m2
DMI Constant (D)
Gilbert Damping (α)
2uK = 0. For VCMA,
change is given by ∆(cid:1863)(cid:3048)(cid:2869)(cid:3404)∆PMA(cid:3404)
(cid:1853)E. Here, (cid:1853) and E are respectively the
electric field. On the other hand, for strain, this is given by ∆(cid:1863)(cid:3048)(cid:2869)(cid:3404)∆PMA(cid:3404)(cid:2871)(cid:2870)(cid:2019)(cid:2026), where (cid:2019) and (cid:2026) are
coefficient of electric field control of
magnetic anisotropy and the applied
respectively the magnetostriction coefficient and the applied stress.
In order to reduce the effect of VCMA/strain on the fixed layer, the thickness of the fixed layer can be made
lower compared to that of the free layer. This lower thickness ensures a high perpendicular magnetic
anisotropy. Materials with low VCMA/magnetostriction co-efficient can be chosen for the fixed layer so
that effect of voltage application is minimal. Additionally, one can use a synthetic antiferromagnetic [49]
layer to increase magnetic stability of the fixed layer. These ensure the magnetization of the fixed magnetic
layer does not rotate much due to VCMA or due to strain (if any) transferred to it. Therefore, we only
simulate the magnetization dynamics of the free layer. The synthetic antiferromagnetic layer also offsets
the dipolar interaction between the fixed and the free layer. Hence, we ignore anti-symmetric modification
effects due to dipolar effects in our model. Exchange interaction and DMI can be modulated when an
electric field is applied. However, these effects are minimal [41] and will only result in a small change in
the breathing frequency and will not change the key results of our work significantly.
IV. Results
A. Damped Oscillatory Behavior of Skyrmions
We simulated the magnetization dynamics in a 100 nm diameter nanodisk with thickness of 1 nm. Our
geometry was discretized into 1× 1× 1 (cid:1866)(cid:1865)(cid:2871) cells. Using the parameter values in table I, the ground
magnetization state was found to be a skyrmion. A triangular input spike of ∆PMA=1×105 J/m3 was applied
with 50 ps rise and 50 ps fall time (NOTE: We use fast rise and fall time in the triangular pulse to simulate
response to a near ideal pulse whereas sinusoidal inputs are used later for more realistic device simulations).
Furthermore, we are mostly interested in frequency or phase synchronization of sinusoidal waveforms, but
nevertheless choose triangular spikes initially due to similarity to actual spike like stimulus available in real
neurons (though time scales for biological and artificial skyrmions resonate and fire neurons are vastly
different). The momentary change in anisotropy causes the core of the skyrmions to expand and oscillate
about the equilibrium state.
Figure 2. (a) Damped oscillation of a fixed skyrmion's core due to stimulation with a single pulse [Red color line:
Input spike, Blue color line: Output average magnetization along the perpendicular direction (z-axis) (b) Modulation
of breathing frequency by varying the interfacial parameters.
The oscillatory behavior can be seen from the net magnetization curve in Figure 2 (a). This imitates the
subthreshold neuron oscillation of a resonant neuron. From this magnetization dynamics, the breathing
frequency of the skyrmion can be determined. This is analogous to the eigen frequency (i.e. damped
oscillation frequency) of the neuron. This information is important as an input spike train or sinusoid should
have a frequency that nearly equals the eigen frequency to cause a neuron to resonate and spike. This
breathing frequency strongly depends on the parameters of the system. Here, we determine the breathing
frequency as a function of interfacial parameters PMA and DMI (Fig. 2 (b)). This frequency can be easily
tuned in the range of 1.8 GHz to 5.75 GHz. In addition to interfacial parameters, one can use a DC bias
voltage to change the PMA which will subsequently tune the frequency about which the skyrmion oscillates
but this is not discussed here as it is beyond the scope of this paper.
B. Resonant behavior of Skyrmions
The skyrmion breathing frequency estimated in the last sub-section is now utilized to drive the skyrmion
into resonance and show the resonate and fire behavior is very sensitive to this excitation frequency. We
again start with triangular input pulses for reasons mentioned in the prior sub-section. Triangular pulses of
∆PMA=1.5×105 J/m3 of time interval in a range of 0.35-0.50 ns was applied to the system. At the PMA
chosen (in the absence of voltage applied) the core had a breathing frequency of approximately 2.86 GHz
(T=0.35 ns). Skyrmion breathing of significant amplitude was observed when two input spikes were
separated by an interval that falls in the range 0.43 ns to 0.46 ns. Breathing with diminishing amplitude was
observed in other cases. The example in Fig. 3(a) shows cases for 3 different time intervals between two
successive input spikes: 0.35 ns, 0.45 ns and 0.50 ns.
Figure 3. Resonant behavior: (a) Spike input (b) sinusoidal input
Considering M_z_threshold=0.8, a spiking output can be found for time interval of 0.45 ns, while no output
spikes are found when the time interval was 0.35 ns and 0.50ns. Other than the dependency on time interval
the skyrmion core resonance is significantly sensitive to the amplitude of the input impulse. Lowering
∆PMA to 1.4×105 J/m3 failed to produce any output as expected due to sub-threshold oscillation. However,
increasing the ∆PMA to 1.75×105 J/m3 lowered (instead of increasing) the firing rate from 4 for first 10ns
to just 2. This is because we consider M_z_threshold=0.8, which occurs when ~80% of the spins point upwards.
As the core size is very large, peripheral (boundary) effects strongly influence the breathing dynamics
which makes the behavior strongly nonlinear. Due to this, the correlation between the change of input
magnitude and the spiking behavior is hard to predict at these limits. Hence, for triangular input with
T=0.45ns, ∆PMA of 1.5×105 J/m3 resulted in the best firing behavior.
While triangular spikes were used to illustrate the spiking behavior, a sinusoidal input pulse is more useful
for many practical applications. Appropriate frequency sinusoidal inputs can also result in firing due to the
same principle, i.e. a sinusoid of given amplitude, whose frequency is resonant with the eigen frequency
produces the strongest spiking behavior. Sinusoids of different frequencies with peak to peak
∆PMA=0.96×105 J/m3 were used as inputs. Strongest firing (4 spikes over 6 ns) was found around 2.86
GHz (time period of 0.35 ns) input frequency. Higher frequency (3 GHz or time period of 0.33 ns) and
lower frequency (2.5 GHz or time period of 0.4 ns) resulted in weaker spiking behavior (less than 4 spikes
over the same 6 ns). Further deviation in frequency from resonance: 3.3 GHz (time period of 0.3 ns) and
2.38 GHz (time period of 0.42 ns) resulted in no spiking behavior at all.
We note that the eigen frequency (for single triangular pulse) and resonant frequency for triangular and
sinusoidal inputs all appear to be different. This is because the ∆PMA produced by the input voltage leads
to a variation in the net PMA experienced by the breathing skyrmion, which in turn changes its frequency.
The change in perpendicular anisotropy is given by ∆PMA = (cid:1853)E. The VCMA co-efficient was found to be
be of 1 nm thickness. Energy dissipation per cycle will be (cid:2869)(cid:2870)CV2 considering energy dissipation is dominated
On the other hand, change in PMA achieved via strain is given by ∆(cid:1842)(cid:1839)(cid:1827)(cid:3404)(cid:2871)(cid:2870)(cid:2019)(cid:2026). Magnetostrictive
coefficient (cid:2019) is 37 ppm for CoFeB [53]. Stress cycles with magnitude ~1 GPa will be needed to drive this
example, FeGa has a coefficient of 300 ppm [54] while (cid:2019) can be as high as 1000 ppm for Terfenol-D
as large as 290 fJ/Vm experimentally[50] and 1800 fJ/Vm theoretically[51]. Using a= 100 fJ/Vm, peak to
peak ∆PMA=0.96×105 J/m3 can be achieved using a peak voltage of 0.48 V, considering the MgO layer to
by the energy required to charge the capacitive MgO layer. The capacitance of the MgO layer C= 0.487 fF
for relative permittivity of 7 [52]). This translates into an energy dissipation of 56 aJ.
system to resonance, which is not practical. Materials with higher magnetostrictive coefficients exist. For
[55,56]. The requirement of stress will be correspondingly lower (respectively ~167 MPa and ~50MPa)
assuming that such material systems with such highly magentostrictive materials also exhibit DMI (has not
been studied so far). To generate 50 MPa stress, required voltage is 83.375 mV. We again consider energy
dissipation is dominated by the energy required to charge the capacitive piezoelectric layer. The relative
permittivity of the piezoelectric layer is taken to be 1000. Considering 100 nm thick PZT layer, capacitance
C=0.695 fF. This gives rise to an energy dissipation of mere 2.4 aJ.
We note that, energy dissipation ~ femto-Joules (fJ) in the resistive elements (due to Vbias) will dominate
energy dissipated in the scaled MTJ (~10-100 aJ) as well as the CMOS buffer (each CMOS device typically
require ~100 aJ per switching event [57]). Thus, the total energy requirement will be ~ femto-Joule/spiking
event.
These values are highly attractive in comparison to a purely CMOS implementation of the resonate and fire
neuron. In reference [58], CMOS implementation of a resonate-and-fire neuron involves capacitors
approaching pico-Farad, leading to an energy consumption per firing event in the range of pico-Joules, an
area of many micrometer square and resonant frequency of a few 10s of Hz. In fact, the proposed hybrid
skyrmion-MTJ and CMOS buffer implementation of the resonate and fire neuron, is capable of resonant
frequencies ~few GHz and is potentially 3 orders of magnitude more energy efficient/spiking event and
potentially has 2 orders of magnitude higher density than that the all CMOS implementation [58] as shown
in Table 1.
Table 1. Performance comparison of proposed hybrid nanomagnet-CMOS vs. all CMOS resonate
and fire neuron [58].
Performance metric
Energy dissipation/spiking event
Density (area per device)
Resonance frequency
Hybrid fixed skyrmion-MTJ and
CMOS buffer
~ femto-Joule
~0.01 micron2
~ GHz
All CMOS [58]
~pico-Joule
~micron2
~10s Hz (can be designed to
be much faster)
C. Frequency and Phase synchronization detection of STNO oscillators
Frequency and phase synchronization detection of coupled spin torque nano-oscillators (STNO) is an
important component is neuromorphic computing schemes that implement associative memory[22–24]. In
this section, we show that our proposed device can be used to detect phase and frequency synchronization
of STNOs and, in general, any coupled oscillators. In this subsection, we consider the outputs of two STNOs
(or two coupled oscillators) in general have been added together as:
(cid:1848)(cid:3404)(cid:1848)sin(cid:4666)2(cid:2024)(cid:1858)(cid:2869)(cid:3397)∅(cid:2869)(cid:4667)(cid:3397) (cid:1848)sin(cid:4666)2(cid:2024)(cid:1858)(cid:2870)(cid:3397)∅(cid:2870)(cid:4667)
Here f1 (f2) and Φ1 (Φ2) are respectively the frequency and phase of the first and second oscillator output.
Case I: Phase differs, frequency synchronized
Figure 4. Phase detection: As the phase difference increases the amplitude of the input decreases thus making it
harder for the magnetization to reach the threshold limit for firing
Here the two signals have no difference in frequency but have a phase difference (Δ∅) of pi/18 (10⁰),
pi/4(45⁰), pi/3 (60⁰). We also include a random phase noise as follows:
∅(cid:2869)(cid:3404)∅(cid:2869)(cid:2868)(cid:3397)∅(cid:3045)(cid:3028)(cid:3041)(cid:3031)(cid:3042)(cid:3040),(cid:2869)
∅(cid:2870)(cid:3404)∅(cid:2870)(cid:2868)(cid:3397)∅(cid:3045)(cid:3028)(cid:3041)(cid:3031)(cid:3042)(cid:3040),(cid:2870)
∆∅(cid:3404)∅(cid:2869)(cid:3398)∅(cid:2870)
The random phase noise added here is white noise. In figure 4 we show that output spikes several times
when the phase difference is below a certain limit (e.g. 45⁰ and below) and when the phase difference is
larger (60⁰) the output fails to spike.
Case II: Frequency differs, (we assume that at t=0, ∆∅ =0)
Figure 5. Frequency synchronization detection
Here the two signals have different frequency but have no phase difference at t=0. Both signals are
subjected to phase noise and the spiking output is analyzed over 10 ns. A signal with a frequency of 2.7
GHz (T=0.37ns) is chosen as the base signal. This frequency is slightly lower than the actual resonance
frequency (2.86GHz) and intentionally chosen so to demonstrate robustness of the frequency
synchronization detection to frequencies that are slightly off resonance. Successive signals added to it have
frequencies of 5 GHz, 3.33 GHz, 2.7 GHz, 2.22 GHz and 1.82 GHz. When both frequencies are equal (2.7
GHz) 4 spikes are produced in 10 ns; when mismatched by ~20% (e.g. the 3.33 GHz and 2.22 GHz cases),
less than 4 spikes are produced in 10 ns and finally with significant deviation (e.g. 5 GHz and 1.82 GHz)
no output spike is produced. This suggests that further investigation into the skyrmion magnetization
dynamics may reveal an appropriate input amplitude (and other conditions) where the number of output
spikes over a given time window can provide an estimate of the degree of synchronization.
V. Conclusion
In this work, we studied novel nonlinear resonant dynamics of the core of a fixed skyrmion and showed
that it has potential to lead to an energy efficient hybrid voltage controlled nanomagnetic device – CMOS
device based circuit that can implement a "resonate and fire" neuron. The energy dissipation of such a
device per spiking event can potentially be ~femto-Joules, which is 3 orders of magnitude (1000 times) less
than an all CMOS implementation [58]. It can scale to much higher densities (~100 times less area) than an
all CMOS implementation [58], while being able to exhibit resonance frequencies in the range of a few
Giga-Hertz
Furthermore, future work on combining such voltage controlled nanomagnetic frequency and phase
synchronization detectors with voltage controlled nanomagnetic oscillators (not discussed in detail this
paper) can lead to all voltage controlled-nanomagnetic devices (with some CMOS devices) based
neuromorphic circuits that are potentially very energy efficient, dense and fast.
Acknowledgement: M.A.A., D.B. and J.A. are supported in part by the National Science Foundation
CAREER grant CCF-1253370, Virginia Microelectronics Seed Grant, Virginia Quest
Commercialization Grant.
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|
1905.08660 | 1 | 1905 | 2019-05-21T14:09:11 | A Controllable and Highly Propagative Hybrid Surface Plasmon-Phonon Polariton in a CdZnO-based Two-Interface System | [
"physics.app-ph"
] | The development of new nanophotonic devices requires the understanding and modulation of the propagating surface plasmon and phonon modes arising in plasmonic and polar dielectric materials, respectively. Here we explore the CdZnO alloy as a plasmonic material, with a tunable plasma frequency and reduced losses compared to pure CdO. By means of attenuated total reflectance, we experimentally observe the hybridization of the surface plasmon polariton (SPP) with the surface phonon polariton (SPhP) in the air-CdZnO-sapphire three-layer system. We show how through the precise control of the CdZnO thickness, the resonance frequencies of the hybrid surface plasmon-phonon polariton (SPPP) are tuned in the mid-infrared, and the nature of the hybrid mode turns from a plasmon-like behavior in the thicker films to a phonon-like behavior in the thinnest films. The presence of sapphire phonons not only allows the hybrid mode to be formed, but also improves its characteristics with respect to the bare SPP. The reduced damping of the phonon oscillators allows to reduce the losses of the hybrid mode, enhancing the propagation length above 500 microns, one order of magnitude larger than that of typical SPPs, clearing the path for its application on emerging devices such as plasmonic waveguides. | physics.app-ph | physics | A Controllable and Highly Propagative Hybrid Surface Plasmon-
Phonon Polariton in a CdZnO-based Two-Interface System
J. Tamayo-Arriola1*, E. Martínez Castellano1*, M. Montes Bajo1, A. Huerta-Barberà2, E.
Muñoz1, V. Muñoz-Sanjosé2, A. Hierro1†
1 ISOM, Universidad Politécnica de Madrid, Madrid, Spain
2 Dept. Física Aplicada i Electromagnetisme, Universitat de València, Burjassot, Spain
Abstract
The development of new nanophotonic devices requires the understanding and
modulation of the propagating surface plasmon and phonon modes arising in plasmonic
and polar dielectric materials, respectively. Here we explore the CdZnO alloy as a
plasmonic material, with a tunable plasma frequency and reduced losses compared to pure
CdO. By means of attenuated total reflectance, we experimentally observe the
hybridization of the surface plasmon polariton (SPP) with the surface phonon polariton
(SPhP) in the air-CdZnO-sapphire three-layer system. We show how through the precise
control of the CdZnO thickness, the resonance frequencies of the hybrid surface plasmon-
phonon polariton (SPPP) are tuned in the mid-infrared, and the nature of the hybrid mode
turns from a plasmon-like behavior in the thicker films to a phonon-like behavior in the
thinnest films. The presence of sapphire phonons not only allows the hybrid mode to be
formed, but also improves its characteristics with respect to the bare SPP. The reduced
damping of the phonon oscillators allows to reduce the losses of the hybrid mode,
enhancing the propagation length above 500 m, one order of magnitude larger than that
of typical SPPs, clearing the path for its application on emerging devices such as
plasmonic waveguides.
* These authors contributed equally to this work
† Corresponding author: [email protected]
1
The outstanding properties of electromagnetic surface waves and the recent progress in
the synthesis of semiconductors with optimized properties, has renewed the interest in the
field of plasmonics and its application to new nanophotonic devices.1 -- 3 As a result, there
is a growing demand of functional photonic devices based on light-matter interactions at
interfaces that can overcome the limitations of the current technology of semiconductor
integrated circuits,4 exploring the light confinement phenomenon beyond the diffraction
limit.5
Light interaction with doped semiconductors and polar dielectrics leads to the formation
of surface plasmon polaritons (SPPs) and surface phonon polaritons (SPhPs),
respectively. In such media, when the thickness is reduced to be comparable to the optical
skin depth, epsilon-near-zero (ENZ) modes arise, at the frequency where the dielectric
function vanishes.6 While ENZ modes have the extraordinary ability to confine light
within sub-wavelength thin films,7 and therefore are suitable in photovoltaics and
bolometer devices2 and for nonlinear optics,3 they lack the property of being dispersive,
and thus show very low group velocities and propagation lengths. Conversely, SPPs and
SPhPs have lower light confinements, but much larger group velocities, a key point when
signal transport along an interface is required, as in plasmonic waveguides.4 In order to
further exploit this advantage, here we experimentally and theoretically explore the
hybridization of SPPs with SPhPs in the air-CdZnO-sapphire three-layer system with very
low optical losses, looking for the enhancement of the propagation length of the hybrid
mode as compared to the bare SPP.
The excitation of SPPs in the mid-infrared (IR) requires materials with carrier
concentrations between 1019 to 1021 cm-3, as well as high electron mobilities and low
optical losses. Thus, metals are discarded due to their very high electron concentrations
and high optical losses, and transparent conductive oxides (TCOs) become the best
alternative.8 However, typical TCOs such as ITO and ZnO are far from being ideal for
mid-IR plasmonics due to their high plasma dampings (~ 800−900 ),9,10 which
result in low electron mobilities. In this sense, CdO fulfills the requirements and is
postulated to be the best candidate among all TCOs, taking advantage of its high electron
concentrations and high electron mobilities in as-grown material.11,12 In addition, the
electron concentration, and therefore the plasma frequency can be modulated by doping
or alloying it with other materials.13 -- 16 For instance, it has recently been shown that
2
through the controlled doping of CdO with F the position of the ENZ resonance can be
tuned in a range of frequencies from 1800 to 3668 cm-1.17 Alternatively, we have proposed
the rock-salt CdZnO alloy for tuning the plasma frequency in the mid-IR, between 3000
and 4000 cm-1. Alloying CdO with ZnO in the rock-salt phase also allows us to improve
the Hall electron mobility, yielding values as high as 110 cm2/V·s.18
In this study we present a detailed analysis of the hybridization of two distinct-in-nature
surface modes: the SPP, produced by CdZnO, a plasmonic oxide, and the SPhP, produced
by sapphire, a polar dielectric crystal, which also serves as the substrate where the CdZnO
film is epitaxially grown. The resulting hybrid mode, the surface plasmon-phonon
polariton (SPPP), first proposed by M. Nakayama,19 takes the advantages of the bare
phonon and plasmon surface modes, with a much higher propagation length and a wider
range of attainable frequencies. The SPPP hybrid mode has been experimentally
observed, among other 2D systems, at the graphene-boron nitride interface, confined in
extremely small volumes.20 Here we present the first experimental observation of SPPPs
in oxides, much easier to synthesize and with extraordinary electrical properties for their
implementation in the aforementioned plasmonic devices. Moreover, as compared to a
graphene plasmonic monolayer, the thickness and plasma frequency of thin film oxides
can be easily controlled, allowing to tune the optical response of the SPPP modes over a
wide range of frequencies in the mid-IR.
In the air-CdZnO-sapphire three-layer system here explored, the coupling strength of the
fields at the air-CdZnO and CdZnO-sapphire interfaces is easily controlled by the CdZnO
thickness. This coupling leads to the well-known symmetric and antisymmetric field
distributions, which appear at different energies.7,21,22 Note that our system is not perfectly
symmetric, since the dielectric functions of air and sapphire are different, but we will
refer to the symmetry of the sign of the field distributions, for simplicity. The most
energetic mode, i.e. the symmetric mode, shifts to higher energies when the CdZnO
thickness is reduced, and it is pinned at the plasma frequency in the extremely thin case.
It corresponds to the ENZ mode, where the dielectric function of CdZnO vanishes. The
less energetic mode, i.e. the antisymmetric mode, which in fact is the SPPP, turns from a
plasmon-like behavior for frequencies far from the sapphire phonons in the thickest
CdZnO film to a phonon-like behavior as the thickness of the film is reduced and the
coupling of the fields at both interfaces becomes stronger. Precisely, in the thinner CdZnO
3
films the effect of phonons is more evident, with a direct effect on the enhancement of
the propagation length of the SPPP mode. In the ultrathin limit case, the surface mode is
dominated by the sapphire SPhP. Sapphire has several phonon modes but the one
hybridized with the oxide surface plasmon is the most energetic one, with its transversal
optical (TO) mode at 633 cm-1 and its longitudinal optical (LO) mode at 905 cm-1 (see
Supporting Information).
The Cd1-xZnxO films are grown by metal-organic chemical vapor deposition (MOCVD)
on r-plane sapphire (see Ref. 18 for details), and have rock-salt crystalline structure and
variable thicknesses ranging from 25 to 460 nm. The Zn content in the ternary alloy is set
to be x=10 %, showing a plasma frequency around 4000 cm-1 and larger electron
mobilities than for pure CdO.18 It is worth noting that the polaritons can be observed
thanks to the high crystal quality achieved both in the CdZnO films as well as at the
CdZnO-sapphire interface. The deposition of the film by MOCVD allows achieving these
requirements and having a precise control of the CdZnO thickness, crucial to select the
frequencies where the SPPP can be excited.
In order to excite the surface resonances, attenuated total reflectance (ATR)
measurements were carried out in a Fourier Transform Infrared (FTIR) spectrometer,
where the incident light was p-polarized and the in-plane momentum was matched to the
polariton momentum, , by using a ZnSe prism in the Otto configuration.23 The air gap
the prism-air interface from the system. The angle of incidence ( ) in the CdZnO film
= ∙ ∙ ( ), where =2.37 is the prism refractive index and the light
between the ZnSe prism and the CdZnO film was determined to be about 350 nm in all
the experiments, small enough to excite the SPPP and large enough to nearly decouple
was controlled from 39° to 59°, allowing to scan the polariton dispersion curve through
momentum in vacuum.
4
Figure 1. Measured attenuated total reflectance curves in p-polarization at different angles of incidence for
the two extreme CdZnO thicknesses: (a) 460 nm and (b) 25 nm. The upper branch (UB) and the lower
branch (LB) are indicated in each case.
The measured ATR curves of the two CdZnO extreme thicknesses, i.e. 460 and 25 nm,
are shown in Figure 1. The measured and simulated ATR curves of all samples can be
found in the Supporting Information. In the thickest CdZnO film (Figure 1 (a)), the air-
CdZnO and the CdZnO-sapphire interfaces are almost fully decoupled, and the system
behaves as having two independent interface layers, each with its surface mode: the SPP
formed at the air-CdZnO interface corresponding to the upper branch (UB), and the SPPP
formed at the CdZnO-sapphire interface corresponding to the lower branch (LB). In
Figure 1 (a) it can be seen how the LB is almost negligible, owing to the exponential
decay of the evanescent wave within the CdZnO, which hardly reaches the CdZnO-
sapphire interface.
On the other hand, in the 25 nm-thick CdZnO film (Figure 1 (b)) the fields at both
interfaces are coupled and arrange in a symmetric distribution for the SPP (UB), and in
an asymmetric distribution for the hybrid SPPP (LB). As a result, the difference in energy
of the two branches increases, and the reflectance drop in the asymmetric branch becomes
narrower and more pronounced, while the symmetric branch losses prominence. This is
a consequence of two facts: first, the thickness of the plasmonic material is reduced and
so does the strength of its associated SPP; second, the phonon-like character acquired by
the SPPP hybrid mode, which has a lower plasmon-phonon damping. Indeed, from the
reflectance measurements (see Supporting Information) the damping of the plasma
5
frequency was deduced to be 500 cm-1 and the dampings of the TO and LO phonons 6
and 17 cm-1, repectively Therefore, the damping of the hybrid mode is expected to vary
between these two limits, depending on the proximity of the resonance to the sapphire
phonons.
The overall evolution of the two branches with the thickness of the CdZnO layer can be
observed in Figure 2, where the ATR contour plots of all the samples are shown. The
plots were modelled by applying the Transfer Matrix Method (TMM) to the air-CdZnO-
sapphire system with a ZnSe prism on top, and the symbols indicate the resonance
frequencies experimentally obtained. The parameters used for modelling the ATR
contour plots were previously deduced by means of conventional infrared reflectance
measurements and can be found in the Supporting Information.
Figure 2. From (a) to (f), simulated ATR contour plots and experimentally determined resonance
frequencies (circular dots) in p-polarization for the air-CdZnO-sapphire three-layer system, for each CdZnO
thickness. The horizontally dotted lines indicate, from the highest to the lowest frequency: the plasma
frequency ( ), the asymptote of the bare surface plasmon formed at the CdZnO-air interface
6
sapphire phonon, where the SPhP is found. A comparison of the experimental and simulated ATR contour
plots can be found in the Supporting Information.
Starting with the thickest CdZnO film (Figure 2 (a)), the UB is a pure plasmonic mode,
( , ), the asymptote of the bare surface plasmon formed at the CdZnO-sapphire interface
( , ), and the asymptote of the bare surface phonon formed at the sapphire-air interface
( , ). The inset in (f) shows in more detail the reststrahlen band of the most energetic
and has an asymptote at , = ∙(1+ ) ⁄ when the in-plane
momenta and a plasmon-like behavior with an asymptote at , = ∙
+ ⁄
momentum goes to infinity. On the other hand, although the LB is almost negligible, it
corresponds to the hybrid SPPP mode, with a phonon-like behavior for lower in-plane
for higher in-plane momenta.
As can be observed in Figure 2 (b) to (e), as the thickness decreases the fields at both
interfaces start to interact, resulting on the separation of the symmetric and antisymmetric
branches. The symmetric one approaches the ENZ mode, where the dielectric function of
the material vanishes at the plasma frequency, appearing only for thicknesses below the
skin depth of the material. In fact, it can be seen how in our 25 nm CdZnO sample, the
resonances of the UB are about 3850 cm-1, very close to the plasma frequency, at 3970
cm-1. If the thickness were further reduced, the resonances would be pinned at the plasma
frequency. In contrast, the antisymmetric branch approaches the reststrahlen band formed
within the sapphire TO and LO phonons for reduced thicknesses. Indeed, for the thinnest
CdZnO film the behavior of the LB approaches that of the pure sapphire surface phonon
polariton shown in Figure 2 (f), confined within the reststrahlen band, from the TO
phonon for low in-plane momentum to the asymptote at =845 when the in-
plane momentum tends to infinity. At the resonance, the fraction of the reflected light is
close to zero, acting as a nearly-perfect absorber.
7
Figure 3. Lower branch dispersion curves computed with the TMM for all CdZnO thicknesses for (a) the
air-CdZnO-sapphire system, where the circular symbols indicate the measured resonance positions, and (b)
the idealized air-CdZnO-dielectric system, where the dielectric function of sapphire is free of phonon
resonances. The shaded blue regions indicate the measurable range with the ZnSe prism, from an angle of
incidence of 39º to 59º. The dashed line represents the light line for an angle of incidence of 45º with the
ZnSe prism. (c) ATR measurements and simulations of the air-CdZnO-sapphire and idealized air-CdZnO-
dielectric system, at an angle of incidence of 45º.
In order to properly evaluate the effect of sapphire phonons on the hybrid mode, the
dispersion curves of our air-CdZnO-sapphire system with variable CdZnO thicknesses
(Figure 3 (a)) are compared to that of an idealized system on which phonons have been
removed from the sapphire dielectric function (Figure 3 (b)), i.e. the sapphire substrate is
substituted by a dielectric with a constant dielectric function equal to 3, which indeed is
the high-frequency dielectric constant of sapphire, . The range of frequencies
where the LB is visible is clearly modified by the effect of sapphire phonons, as observed
when comparing Figure 3 (a) and (b). Moreover, the LB is much more dispersive with a
phonon-free dielectric substrate, yielding a pure SPP, and for small variations of the angle
of incidence the shift of the resonance is considerable. This could indicate a higher
propagation length ( ) of the pure SPP mode along the x-axis compared to the hybrid
SPPP, since the group velocity, defined as = [ ]
⁄
, is higher. However, as
8
the bare SPP, its losses are reduced and therefore its is largely enhanced.
discussed below, thanks to the reduced damping of the hybrid SPPP mode compared to
The effect of the reduced damping is appreciable in the measured and simulated ATR
curves shown in Figure 3 (c). In the air-CdZnO-sapphire system the antisymmetric mode
is clearly seen, with a fraction of reflected light close to 0 %, especially when the
resonance approaches the LO sapphire phonon. In contrast, for a phonon-free dielectric
substrate the resonance is at much lower frequencies (Figure 3 (b)) and thus is not
detectable in the mid-IR, as simulated with the dashed lines of Figure 3 (c). In order to
make it visible in the mid-IR the thickest samples have to be chosen and the angle of
incidence has to be higher than 52°. However, it is worth remembering that when the
CdZnO thickness is increased, the strength of the LB is reduced since the evanescent
wave hardly reaches the CdZnO-sapphire interface. Finally, regarding the symmetric
mode, as observed in Figure 3 (c) the resonance is unaffected by phonons, since their
respective frequencies are found far from each other.
9
Figure 4. Distribution of the z-component of the electric field of a plane wave propagating along the (1,0,1)
direction with a frequency of 1050 cm-1, impinging at 45º on the air-CdZnO-sapphire system (a), and on
the idealized air-CdZnO-dielectric system (b). In (c), the frequency of the plane wave is 3950 cm-1 and it
impinges in the air-CdZnO-sapphire system. For all cases, the inset shows a zoom of the region of interest.
To confirm the existence of the symmetric and antisymmetric modes, the z-component of
the electric field (Ez) at the XZ-plane in the CdZnO film with a thickness of 65 nm was
calculated, using the finite-difference time-domain (FDTD) method, from an open-source
software package,24 and is shown in Figure 4. Again, in order to evaluate the effect of
phonons on the LB, the Ez distribution in our system (Figure 4 (a)) is compared with that
of an equivalent idealized system where the sapphire is substituted by the dielectric
without phonons (Figure 4 (b)). As observed in Figure 4 (a), the field distribution is
antisymmetric at the frequency where the SPPP is found, i.e. at 1050 cm-1 for an angle of
incidence of 45°, with opposite sign in the air and sapphire half-spaces. Within the
CdZnO, Ez is close to zero, as expected for an antisymmetric mode.22 When the phonons
in the substrate are removed, as in Figure 4 (b), the antisymmetric mode is dissipated,
with the plane wave being almost unaltered by the dielectric. Besides, as expected from
10
Figure 3 (b), the fraction of reflected light has now increased from 5 to 75 % since no
light is absorbed by any resonance, and an interference pattern is formed in the prism.
When the frequency of the incident light matches the resonance of the UB, the Ez
distribution in Figure 4 (c) is formed. Now the field distribution is symmetric, with the
same sign for Ez in air and in the sapphire substrate, and opposite sign within the CdZnO
thin film. When the thickness of the CdZnO film is further reduced to 25 nm and below,
this resonance approaches the ENZ mode and the Ez magnitude within the thin film is
further enhanced.
Once the nature of the modes has been analyzed, it is worth evaluating whether the
hybridation of the oxide SPP with the sapphire SPhP improves the key field parameters.
To answer this question, and focusing on the SPPP hybrid mode, we have computed the
propagation length ( ) along the interface and the transverse field confinement distance
( ) in air. The values obtained for the SPPPs of our set of samples are compared with
those of the SPPs formed in the idealized phonon-free air-CdZnO-dielectric system and
shown in Figure 5.
Figure 5. (a) Ratio of the propagation length along the x-direction between the SPPP and the phonon-free
SPP vs. the frequency of the incoming light. Note the change in the y-scale at y=3.1. The inset shows the
absolute values of and for each sample, at the minimum measurable frequency in each case. (b)
Ratio of the field confinement distance in air between the SPPP and the phonon-free SPP vs. the frequency
11
of the incoming light. The inset shows the confinement length as compared to the wavelength of the light,
at the minimum measurable frequency in each case. The highlighted regions of the curves in both graphs
correspond to the attainable frequencies with the ZnSe prism from an angle of incidence of 39º to 59º.
⁄
The propagation length is limited by the losses in the CdZnO and sapphire media, and
therefore is inversely proportional to the imaginary part of the polariton momentum, as
. In Figure 5 (a), the ratio of the propagation length with and without
phonons in the substrate as a function of the frequency of the incoming light is represented
=12 { }
for every CdZnO thickness, i.e., the propagation length of the SPPP ( ) in the air-
CdZnO-sapphire system is compared to that of the bare SPP ( ) in the phonon-free
⁄
For a CdZnO thickness of 150 nm, the
of 150 nm, below a frequency of ~1100 cm-1 the SPP of the air-CdZnO-dielectric system
higher losses, explaining the drop of as compared to .
has a nearly-constant slope, being in essence a lossless photon propagating along the
interface. In contrast, as seen in Figure 3 (a) for the same frequencies and thickness, the
SPPP of the air-CdZnO-sapphire system is not photon-like but phonon-plasmon-like with
air-CdZnO-dielectric system. In order to provide a reference, the range of frequencies
where the polariton can be excited in our geometry is highlighted.
ratio reaches a maximum of 2.9 at a
frequency of 1100 cm-1 and then it drops for lower frequencies. This is explained as
follows: considering the dispersion curve in Figure 3 (b) corresponding to the thickness
Conversely, for lower CdZnO thicknesses the frequencies at which the dispersion curves
in Figure 3 (b) approach the photon-line are much lower. Besides, the resonances in
Figure 3 (a) are closer to the reststrahlen band of the sapphire phonons, and the hybrid
mode acquires a phonon-like character with reduced losses. This explains the sudden rise
of with a sapphire substrate when the frequency approaches the phonon
frequencies. For a CdZnO thickness of 65 nm, is 46 times at an angle of
incidence of 39°, and for a thickness of 25 nm the ratio is 128. Considering the absolute
values shown in the inset of Figure 5, the propagation length reaches the outstanding
values of 513 µm for the 25 nm sample and 458 µm for the 65 nm sample, much higher
than the typical values for SPPs in the mid-IR. Indeed, looking at the ENZ-SPP hybrid
mode observed by Runnerstrom et al. in a CdO system,25 the propagation lengths they
obtained are in the range of 5-40 µm in the ultra-strong coupling regime. The propagation
length is one order of magnitude larger in our study, and arises from the fact that the
12
antisymmetric mode formed in our system does not penetrate the plasmonic material (see
Figure 4 (a)) and so the SPPP mode suffers from lower losses than the ENZ-SPP mode.
In a purely phononic structure, such as that reported by N.C. Passler for the air-AlN-SiC
system,26 and thanks to the reduced damping of phonons, the ENZ-SPhP hybrid mode has
revealed to support a propagation length of 900 µm. However, it must be noticed that
when the surface modes are entirely phononic in nature other shortcomings arise, such as
the limited tunability of the resonance frequencies.
⁄
Regarding the transverse field confinement distance, which will dictate the degree of
miniaturization of the components in a potential nanophotonic circuit,27 it is inversely
proportional to the imaginary part of the transverse component of the polariton
. The confinement distance of the antisymmetric SPPP
momentum, as =12 { }
mode ( ) cannot be as low as that in of ENZ-modes, where most of the field intensity
and the confinement distance of the bare SPP ( ), rises when the frequency is
lies within the plasmonic material.7 As observed in Figure 5 (b), the ratio of the field
confinement distances with and without phonons in the substrate, i.e. the ratio between
lowered, by the effect of sapphire phonons. However, its maximum value does not exceed
2 and 1.6 for the 25 nm and 65 nm CdZnO films, respectively, which again are the
thicknesses for which the hybrid SPPP mode is better formed. We thus confirm the loss
in confinement is negligible as compared to the gain in the propagation length discussed
above. Indeed, looking at the values in the inset of Figure 5 (b), the confinement distance
covers the range of (0.15−0.30) , where is the wavelength of the incident light, for
the system without phonons, and the range of (0.30−0.45) for the system with
phonons. Thus, these confinements are similar to those of typical SPPs.
In summary, in this work we have experimentally demonstrated the existence of a surface
plasmon-phonon polariton hybrid mode in the air-CdZnO-sapphire three-layer system,
which is observable thanks to the high crystal quality of the CdZnO films and their
interface to sapphire, as well as their reduced optical losses. The coupling between the
fields at the air-CdZnO and CdZnO-sapphire interfaces is shown to be controllable
through the CdZnO thickness, and they arrange into the symmetric ENZ mode and
antisymmetric SPPP hybrid mode. This allows to modulate the polariton resonances over
a wide range of frequencies in the mid-IR, from 850 to 4000 cm-1.
13
Besides, we have shown how the SPPP hybrid mode incorporates the advantages of the
bare SPP and SPhP modes. The very low damping of the sapphire phonons reduces the
overall damping of the hybrid SPPP as compared to the bare SPP, especially for
frequencies close to the sapphire reststrahlen band. This has a direct impact on the
propagation length of the polariton, a fundamental characteristic for the employment of
surface polaritons in nanophotonic devices. For CdZnO thicknesses of 65 nm and 25 nm,
significant propagation lengths of 458 µm and 513 µm, respectively, have been obtained,
i.e., one order of magnitude higher than that of typical SPPs.
Acknowledgments
This work was funded by the Spanish Ministry of Economy and Competitiveness
(MINECO) through the Project TEC2017-85912-C2, and the Generalitat Valenciana
under the project Prometeo II 2015/004. The authors would like to thank Dr. J. Pedrós
and R. Fandan for valuable discussions. J.T.-A. holds a Predoctoral Contract from the
Universidad Politécnica de Madrid.
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(22) Smith, L. H.; Taylor, M. C.; Hooper, I. R.; Barnes, W. L. Field Profiles of Coupled
Surface Plasmon-Polaritons. J. Mod. Opt. 2008, 55 (18), 2929 -- 2943.
(23) Otto, A. Excitation of Nonradiative Surface Plasma Waves in Silver by the Method
of Frustrated Total Reflection. Zeitschrift für Phys. A Hadron. Nucl. 1968, 216 (4),
398 -- 410.
(24) Oskooi, A. F.; Roundy, D.; Ibanescu, M.; Bermel, P.; Joannopoulos, J. D.;
Johnson, S. G. MEEP: A Flexible Free-Software Package for Electromagnetic
Simulations by the FDTD Method. Comput. Phys. Commun. 2010, 181, 687 -- 702.
(25) Runnerstrom, E. L.; Kelley, K. P.; Folland, T. G.; Nolen, J. R.; Engheta, N.;
Caldwell, J. D.; Maria, J. Polaritonic Hybrid-Epsilon-near-Zero Modes: Beating
the Plasmonic Confinement vs Propagation-Length Trade-Off with Doped
Cadmium Oxide Bilayers. Nano Lett. 2019, 19 (2), 948 -- 957.
(26) Passler, N. C.; Gubbin, C. R.; Folland, T. G.; Razdolski, I.; Katzer, D. S.; Storm,
D. F.; Wolf, M.; De Liberato, S.; Caldwell, J. D.; Paarmann, A. Strong Coupling
of Epsilon-Near-Zero Phonon Polaritons in Polar Dielectric Heterostructures.
Nano Lett. 2018, 18 (7), 4285 -- 4292.
(27) Barnes, W. L.; Dereux, A.; Ebbesen, T. W. Surface Plasmon Subwavelength
Optics. Nature 2003, 424 (6950), 824 -- 830.
16
Supporting Information
Section 1 shows the details of the infrared reflectance measurements and modelling
carried out to derive the fundamental optical parameters of the CdZnO films and sapphire
substrate. In Section 2 the ATR geometry and the experimentally obtained and modelled
ATR curves for all samples are shown. In Section 3, the procedure to obtain the real and
imaginary parts of the in-plane and out-of-plane momentum of the hybrid mode is
described.
1. Infrared reflectance spectroscopy: experimental and modelling
The infrared reflectance spectra of the samples were measured and fitted in order to obtain
the fundamental parameters of the CdZnO films and the sapphire substrate: the CdZnO
plasma frequency ( ) and its damping ( ), the CdZnO film thickness (a) and the
sapphire phonon modes. To do so, the dielectric function of each constituent layer was
modelled and the Transfer Matrix Method (TMM) was applied.
First, a r-plane sapphire substrate was measured and fitted and its phonon modes were
derived. Both in the reflectance and attenuated total reflectance (ATR) measurements, the
sapphire substrate was oriented in the direction where the axial phonons are minimized,1
and therefore to fit the reflectance and ATR spectra only the planar phonons are required.
The contribution of the sapphire phonons to the dielectric function are considered through
Gervais harmonic oscillators, as
( )= , − − ,
, − − ,
where the product runs through all the planar phonon modes found in sapphire,
is the high-frequency dielectric constant of sapphire, ,
transversal optical (TO) and longitudinal optical (LO) phonons, respectively, and ,
are the frequencies of the
the damping of the TO and LO oscillators.
The measured and modelled reflectance curves of the r-plane sapphire substrate in p-
polarization at an incidence angle of the infrared light of 45° are shown in Figure S1. The
extracted values of the phonon frequencies are listed in Table S1.
17
Figure S1. Reflectance spectrum (continuous line) and fitted model (dotted line) of the bare r-plane
sapphire substrate at 45° in p-polarization. The shaded region indicates the reststrahlen band of the E4 mode,
where the sapphire surface phonon is formed.
Phonon mode
(cm-1)
(cm-1)
388
481
629
906
E1
E2
E3
E4
(cm-1)
4
1
7
17
385
440
570
633
(cm-1)
4
1
5
6
Table S1. Frequencies and dampings of the phonon modes of the r-plane sapphire substrate derived from
infrared reflectance spectroscopy. E4 is the phonon mode interacting with the CdZnO surface plasmons.
Apart from the values shown in Table S1, was deduced to be 3.0. These results
are in excellent agreement with those by Schubert et al.1 and are used as input parameters
for modelling the reflectance spectra of the CdZnO-sapphire films.
On the other hand, the dielectric function of CdZnO has to account with the interaction
of the infrared light with the free electrons through the Drude model, as
Here, the plasma frequency is defined as
( )= 1− .
=
∗ ,
18
where n is the free electron concentration, e the electron charge, ∗ the electron effective
mass, the vacuum permittivity, and is the high-frequency dielectric constant of
CdZnO.
The measured and modelled reflectance curves for all the samples are shown in Figure
S2, and the extracted values from the fits are shown in Table S2.
Figure S2. Reflectance spectra (continuous lines) and the fitted model (dotted lines) of all the samples at
45° in p-polarization, offset for clarity. The plasma frequency of the thickest CdZnO film is indicated as an
example, falling at the dip in the reflectance spectrum.
ω (cm-1)
γ (cm-1)
4082
4121
4043
4098
3980
525
518
518
550
503
a (nm)
460
250
150
65
25
=5.1 was obtained for all films.
Table S2. Values of the fitted parameters of the CdZnO films from reflectance spectroscopy. A value of
As can be observed in Table S2, except of the thickness, all the other fitted parameters
are very similar in all the CdZnO films. Therefore, essentially all the changes in the
reflectance spectra arise from the variation of the CdZnO thickness. Besides, it is worth
to note the difference between the damping of the CdZnO plasmons and that of sapphire
phonons. While in CdZnO the plasmons have dampings around 520 cm-1, the E4 phonon
mode of sapphire has a damping of 6 cm-1 for the TO and 17 cm-1 for the LO. Thus, the
19
damping of the SPPP hybrid mode must be between these two limits, depending on the
proximity of the resonance to the sapphire phonons.
Finally, all the parameters derived from these fits were used as input parameters for the
ATR simulations, in order to compare the modelled ATR curves with the experimental
ones.
2. ATR measurements and simulations
In order to excite the surface modes, ATR measurements were carried out in the Otto
configuration,2 as schematized in Figure S3.
Figure S3. Schematic of the ATR measurements carried out in the Otto configuration. The evanescent
wave generated at the prism-air interface excites the surface modes of the air-CdZnO-sapphire system. The
z component of the electric field of the symmetric mode is represented.
A ZnSe prism with an internal angle of 45° and a refractive index of 2.37 is used, and the
ATR curves were taken in p-polarization, varying the incidence angle (θ) in the range
between 39° and 59°. Thus, the in-plane momentum is matched to the polariton
momentum by changing the incidence angle, and the resonance frequency of the surface
plasmon polariton (SPP) and the surface plasmon phonon polariton (SPPP) shift
accordingly.
The measured ATR curves of all samples are shown in Figure S4, and, in order to compare
them with those modelled with the TMM, the simulated ATR curves are shown in Figure
S5. The parameters for modelling the ATR curves are taken from the reflectance
measurements described in Section 1, and the only parameter to be fitted is the air gap,
20
which results to be about 350 nm in all the experiments. In each case, the upper branch
(UB), corresponding to the symmetric mode, and the lower branch (LB) corresponding
to the antisymmetric mode, are indicated.
Figure S4. From (a) to (d), ATR measured curves for decreasing CdZnO thickness. The incidence angle
was varied by 2° steps in the range from 39° (dark colors) to 59° (light colors). (f) ATR measured curve of
the bare r-plane sapphire substrate. The inset shows in more detail the sapphire surface phonon polariton.
21
Figure S5. From (a) to (d), ATR simulated curves with the TMM for decreasing CdZnO thickness. The
incidence angle was varied by 2° steps in the range from 39° (dark colors) to 59° (light colors). (f) ATR
simulated curve of the bare r-plane sapphire substrate. The inset shows in more detail the sapphire surface
phonon polariton.
3. Derivation of the real and imaginary parts of the in-plane and out-of plane
momenta of the hybrid SPPP
qualitatively describe the nature of the surface polaritons, in order to accurately derive
Assessing the real and imaginary parts of the in-plane and out-of-plane momenta of the
surface modes is key to compare the experimentally obtained resonance frequencies of
the SPPP with those predicted by the theory, and to compute its propagation length ( )
and confinement distance ( ). While the air-CdZnO-sapphire system is enough to
the dispersion curves and and of the SPPP the prism has also to be considered, i.e.
Following the derivation deduced by Baltar et al.,3 { , } and { , } in a four-
air is considered with a finite thickness, and the ZnSe prism is treated as a semi-infinite
medium.
layer system can be obtained from
22
0
with = / ,
where c is the speed of light, and
0
+
−
−
0
−
−
( )+ ( )
0 −
( )− ( )
=0.
Here, the zeros of the determinant define the implicit relation between { , } and
{ , } with the frequency of the incident light. Letters a and b indicate the thickness
= = −
= / ,
where the subscript i takes the number of the corresponding layer and is its associated
of the CdZnO and the air gap, respectively, and the subscript numbers are related to the
involved materials: 1 for the ZnSe prism, 2 for air, 3 for CdZnO and 4 for sapphire. The
different parameters are defined as:3
dielectric function.
References
1 M. Schubert, T.E. Tiwald, and C.M. Herzinger, Phys. Rev. B 61, 8187 (2000).
2 A. Otto, Zeitschrift Für Phys. A Hadron. Nucl. 216, 398 (1968).
3 H.T.M.C.M. Baltar, K. Drozdowicz-tomsia, and E.M. Goldys, Plasmonics - Principles
and Applications (InTech, 2012).
23
|
1905.00688 | 2 | 1905 | 2019-08-08T07:01:47 | Electromechanics in vertically coupled nanomembranes | [
"physics.app-ph",
"cond-mat.mes-hall"
] | We investigate the electromechanical actuation of a pair of suspended silicon nitride membranes forming a monolithic optomechanical array. By controlling the membrane resonators' tensile stress via a piezoelectrically controlled compressive force applied to the membrane chip we demonstrate noninvasive tuning of their mechanical mode spectrum, as well as strong intermode electromechanical coupling. Piezoelectric actuation is also shown to enhance the nonlinear response of the membranes, which is evidenced either by parametric amplification of the fundamental mode thermal fluctuations or by resonant driving of these modes into high amplitude states. Such an electro-optomechanical membrane array represents an attractive tunable and versatile platform for sensing, photonics and optomechanics applications. | physics.app-ph | physics |
Electromechanics in vertically coupled nanomembranes
Sepideh Naserbakht, Andreas Naesby, and Aurélien Dantan1, a)
Department of Physics and Astronomy, University of Aarhus, DK-8000 Aarhus C, Denmark
(Dated: 9 August 2019)
We investigate the electromechanical actuation of a pair of suspended silicon nitride membranes forming a monolithic
optomechanical array. By controlling the membrane resonators' tensile stress via a piezoelectrically controlled com-
pressive force applied to the membrane chip we demonstrate noninvasive tuning of their mechanical mode spectrum,
as well as strong intermode electromechanical coupling. Piezoelectric actuation is also shown to enhance the non-
linear response of the membranes, which is evidenced either by parametric amplification of the fundamental mode
thermal fluctuations or by resonant driving of these modes into high amplitude states. Such an electro-optomechanical
membrane array represents an attractive tunable and versatile platform for sensing, photonics and optomechanics ap-
plications.
systems
Introduction -- Electro-optomechanical
involving
high-quality nano/micromechanical resonators and integrat-
ing electric and optical degrees of freedom1 are widely studied
for sensing and photonic applications2,3, as well as for funda-
mental investigations of the effects of radiation pressure in the
context of optomechanics4. Engineering linear and nonlin-
ear electromechanical couplings in monolithic nanoresonator
arrays is interesting for a wide range of ultrasensitive mea-
surements2, photonics5, as well as for investigating collective
dynamics, such as parametric resonances6, synchronization7,8
or coherent phonon manipulations9 -- 14.
The combination of small effective mass, large area and
high mechanical frequencies/quality factors makes suspended
membranes made of low-loss material such as silicon nitride
excellent resonators for optical sensing15 -- 17 or electroopti-
cal conversion18 -- 21 applications. The optomechanical inter-
action of such a membrane with an optical cavity field22,23
also allows for cooling its vibrations down into the quantum
regime and observing radiation pressure-induced quantum ef-
fects24 -- 29.
Placing arrays of nanomembranes into an optical cav-
ity30 -- 32 furthermore opens up for exciting investigations
of strong coupling and collective optomechanics33 -- 39, as
enhanced optomechanical effects are predicted, effective
phonon-phonon interactions can be engineered and phenom-
ena involving multiple electromagnetic modes and resonators
can be studied. Tunability of the individual mechanical el-
ements in such optomechanical arrays and integration of the
electric degree of freedom are highly desirable, if not essen-
tial, for investigating collective effects such as collectively en-
hanced radiation pressure forces35,39, superradiance38, syn-
chronization40, topological interactions41, coherent phonon
dynamics37 or entanglement and multimode squeezing gen-
eration33,34,42,43.
In this letter we investigate the electromechanical actuation
via piezoelectricity of a pair of suspended silicon nitride mem-
branes forming a monolithic optomechanical array. The ap-
plication of a piezoelectric compressive force to one of the
membrane chips allows for modifying the tensile stress of the
membranes and, thereby, for tuning their mechanical mode
a)Electronic mail: [email protected]
FIG. 1. Left: photograph of the array mounted on a ring piezoelectric
transducer. Right: schematic transverse cut of the assembly (not to
scale). The horizontal red arrows indicate the direction of the com-
pressive piezoelectric force for a positive applied dc-voltage.
spectrum without deteriorating the mechanical quality factors
of the resonances. Such a scheme was recently applied to a
single membrane resonator44 and to a pair of distant mem-
branes in an optical cavity32. We demonstrate here that the
vibrational mode frequencies of two membranes in an 8.5
µm-long monolithic array can be tuned to degeneracy and
strongly coupled via the application of a static bias voltage
to the piezoelectric transducer. We also observe parametric
amplification45 of the thermal fluctuations of their fundamen-
tal modes and demonstrate an enhancement of the nonlinear
response of both membranes, evidenced by a lowering of the
parametric oscillation thresholds and whose origin we discuss
for each resonator.
Electro-optomechanical array -- The array used in this work
consists in a pair of commercial46, high-stress, 500 µm-square
stochiometric silicon nitride thin films (thickness 92 µm) de-
posited on a 5 mm-square silicon chip (thickness 500 µm).
The chips were assembled parallel with each other with an 8.5
µm intermembrane separation (multilayer Si/Si/SiN spacer in
Fig. 1) and their sides glued together at the corners follow-
ing the method of Ref.47. Three corners of one of the chips
were then glued to a 6 mm inner diameter piezoelectric ring
transducer48, as shown in Fig. 1. The vibrations of the mem-
branes in vacuum (10−7 mbar) are monitored by optical in-
terferometry by measuring the transmission through the array
of monochromatic light provided by a tunable external cav-
ity diode laser (890-940 nm). The array then acts as a short,
low-finesse Fabry-Perot cavity, whose length fluctuations can
be analyzed by tuning the laser wavelength so as to maximize
their amplitude, and by analyzing their frequency content us-
ing a low resolution bandwidth spectrum analyzer. This spe-
π
a
ρ
(cid:113) T
cific array exhibits a worse degree of parallelism after assem-
bly (the tilt between the membranes is estimated to be around
2 mrad) than previous similar arrays47, resulting in a slightly
reduced interferometric displacement sensitivity. The lowest
square drummodes of the membranes of this array, with ∼
MHz frequencies and mechanical quality factors in the 105
range, can still be reliably characterized, as done in17.
Tuning of mechanical mode spectrum -- In the tensile stress-
dominated regime the vibrational mode frequencies of the
√
membrane resonators are given by ωm,n =
m2 + n2,
where T = 715 MPa is the tensile stress, ρ = 2700 kg/m3
the density of silicon nitride, a = 500 µm the lateral dimen-
sion of the membrane and n and m are strictly positive inte-
gers. When a static compressive force is applied to the silicon
frame, the tensile stress of both films is modified in such a
way that opposite, linear frequency shifts with similar mag-
nitude are observed for the (1,1) and (2,2) modes of each
membrane over the bias voltage range 0-80V, as illustrated
in Fig. 2. The compressive force on the bottom chip results
in a reduced tensile stress for the silicon nitride film (B) de-
posited on this chip, and thereby a decreasing resonance fre-
quency with positive bias voltage, as observed in44. The top
chip, glued at its corners to the bottom one, then experiences
an increased tensile stress and the resonance frequency of the
A membrane increases with bias voltage. Consistently with
this picture, we tested that flipping the array and having the
A membrane chip glued to the transducer shows the opposite
behavior, namely, a decrease in A membrane's resonance fre-
quencies and an increase in the B membrane's. Piezoelectric
biasing in the geometry of Fig. 1 thus allows for achieving fre-
quency degeneracy of the (1,1) and (2,2) for bias voltages Vdc
of 56 V and 38 V, respectively. Futhermore, no noticeable ef-
fect of the bias voltage on the mechanical quality factors was
observed (inset of Fig. 2(a)), demonstrating the noninvasive
nature of the scheme.
Interestingly, the intermode coupling via the frame/spacer
structure can be investigated by analyzing the observed ther-
mal noise spectrum around the degeneracy points, as shown
in Fig. 3. This spectrum can be understood on the basis of a
simple coupled oscillator model in which the dynamics of the
mode amplitudes xA,B are given by
xA + γA xA + (ωA + εAVdc)2xA = η(xB − xA) + FA,
xB + γB xB + (ωB − εBVdc)2xB = η(xA − xB) + FB,
(1)
(2)
where γA,B are the mode mechanical damping rates, ωA,B their
resonance frequencies at zero bias voltage, εA,BVdc the linear
voltage dependent frequency shifts, η the intermode coupling
constant and FA,B the thermal noise forces (divided by the
mode effective mass). Fourier transforming these equations
readily yields the Fourier component amplitudes at frequency
ω, e.g.,
xA(ω) =
χB(ω)FA(ω) + ηFB(ω)
χA(ω)χB(ω)− η2
(3)
where χα (ω) = (ωα + εαVdc)2 + η − ω2 − iγαω (α = A,B)
and with a similar expression for xB(ω) when exchanging
2
FIG. 2. (a) Resonance frequencies of the fundamental modes of both
membranes as a function of the applied bias voltage Vdc. Inset: me-
chanical quality factors Qα = ωα /γα (α = A,B) versus Vdc. (b) Res-
onance frequencies of the (2,2) modes as a function of Vdc.
subscripts A and B. The interferometric signal measured by
the spectrum analyzer is proportional to the noise spectrum of
xA − xB, S(ω), whose analytical expression can then be ob-
tained from the previous relations. The dashed lines in Fig. 3
show the results of a global fit of the data to the model, fixing
the mechanical damping rates and thermal force amplitudes
using the spectra far from the degeneracy points, and leav-
ing as free parameters the voltage-dependent frequency shift
rates εA,B, as well as the intermode coupling rate ¯η, defined
by η = ¯η(ωA + ωB)/2. The resulting spectra are observed
to match well the observed data, in particular in the avoided
crossing region, where the intermode coupling plays a signifi-
cant role. Remarkably, the extracted value for the (1,1) modes,
¯η/(2π) (cid:39) 8 Hz, is found to be slightly larger than both me-
chanical decay rates γA/(2π) (cid:39) 7 Hz and γB/(2π) (cid:39) 4.5 Hz,
which places such an electromechanical array at the border
of the strong coupling regime. For the (2,2) modes, whose
mechanical quality factors are a bit lower, η/(2π) (cid:39) 7 Hz
is slightly smaller than γA,B/(2π) (cid:39) 10 Hz. Such strong
electromechanical couplings are promising for e.g. coherent
phonon manipulations9 -- 11 or electro-optical conversion18 -- 21.
Parametric actuation -- We now turn to the piezoelectric tun-
ing of the nonlinear response of the mechanics and investigate
the parametric amplification6,12,44,45,49 -- 53 of the thermal fluc-
-10010203040506070721.0721.1721.2721.3721.4721.5721.6010203040501442.91443.01443.11443.21443.31443.41443.51443.60204060801,01,11,21,31,41,51,6Q/105Vdc (volt) A(1,1) B(1,1)Vdc (volt)Resonance frequency (kHz) A(2,2) B(2,2)Resonance frequency (kHz)Vdc (volt) 3
FIG. 4. Noise spectra of both fundamental modes when either the
A(1,1) mode (red, V2ω = 322 mV) or the B(1,1) mode (blue, V2ω =
300 mV) is parametrically excited below the oscillation threshold and
for Vdc = 40 V. The black curve shows the thermal noise spectrum
as a reference. Inset: parametric oscillation threshold voltage V th
dc
for both fundamental modes (normalized to the 448 mV threshold
voltage of the A(1,1) mode at zero bias voltage) as a function of Vdc.
when ζα ∼ 2/Qα. Parametric gains of a few tens to a few
hundreds are typically observed before the oscillation thresh-
old is reached. The inset of Fig. 4 shows the variations with
the bias voltage of the parametric oscillation threshold voltage
of both modes; application of the bias voltage strongly reduces
the parametric oscillation threshold of both membrane modes,
in a seemingly relatively similar fashion.
The effect of the bias voltage on the response of each mem-
brane is quite different in nature, though. To assess the effect
of biasing on the dynamical response of the membranes, the
(1,1) and (2,2) modes of each membranes were driven inde-
pendently at their mechanical resonance frequency, for a fixed
bias voltage and increasing modulation amplitudes, as shown
in Fig. 5. A linear response is observed over a wide range of
modulation amplitudes, before nonlinearities kick in13. The
linear response of the modes of membrane B -- which is di-
rectly coupled to the piezoelectrically stressed silicon frame --
is strongly affected by the bias voltage; in particular, its in-
creased response at ω2,2 (cid:39) 2ω1,1 accounts well for the de-
crease of the parametric oscillation threshold with Vdc.
In contrast, such a direct parametric modulation of the
spring constant does not explain the lowering of the paramet-
ric oscillation threshold for A(1,1), as the linear response of
the modes of membrane A -- whether at the fundamental or the
second harmonic frequency -- is fairly independent of the bias
voltage. To investigate the role of the biasing on the nonlinear
response of membrane A further, its fundamental mode was
driven in the high amplitude regime before the onset of bista-
bility. Frequency scans around ω1,1 of the signal measured
by the spectrum analyzer in zero-span mode were performed
FIG. 3. Thermal noise spectrum for different bias voltages around
the degeneracy point for the (1,1) modes (a) and (2,2) modes (b). Vdc
is varied from 40 V (lower curve) to 60 V (upper curve) in (a) and
from 33 V (lower curve) to 41 V (upper curve) in (b). The spectra
are offset vertically for clarity. The dashed lines show the results of
a global fit to the coupled oscillator model described in the text.
tuations of the fundamental modes of both membranes when,
in addition to the dc bias voltage, a modulation at twice the
mechanical resonance frequency, V2ω cos(2ωt), is applied to
the piezoelectric transducer. When one of these modes, with
resonance frequency ωα, is parametrically driven at 2ωα, its
dynamics can be described by the Mathieu equation45
xα + γα xα + ω2
α [1 + ζα cos(2ωαt)]xα = Fα ,
(4)
where ωα includes the bias voltage shift and where ζα is pro-
portional to the parametric modulation amplitude V2ω. The
bias voltage is chosen so as to operate away from the de-
generacy point for the (1,1) modes, as well as far from res-
onance with the (2,2) modes, whose frequencies are close to
the second harmonic of the fundamental frequencies (the ab-
sence of excitation of these modes was verified experimen-
tally). Figure 4 shows examples of parametrically amplified
noise spectra of both modes at zero bias voltage. The fluctu-
ations of the mode which is parametrically driven resonantly
are observed to strongly increase while its noise spectrum be-
comes narrower, as the parametric modulation amplitude in-
creases, until the parametric oscillation threshold is reached
721.10721.15721.200100200300400ω/2π(kHz)S(ω)(a.u.)1443.241443.261443.281443.301443.32010203040ω/2π(kHz)S(ω)(a.u.)(a)(b)721.2721.3721.4721.50102030400204060800.00.20.40.60.81.0 A(1,1) B(1,1)Norm. threshold voltageVdcS(w) (dB)w/(2p) (kHz) 4
FIG. 6. Amplitude (normalized to the thermal motion amplitude x0)
of the A(1,1) mode as a function of drive frequency around ω1,1,
for different drive powers (a power of -30 dBm corresponds to an
applied modulation voltage amplitude of 9.2 µV): (a) Vdc = 20 V
and (b) Vdc = 80 V. The solid lines show the results of global fits to
the nonlinear Duffing oscillator model discussed in the text.
resonance frequency ωα. Since the nonlinear Duffing term
in x2
α in Eq. (5) under such a driving can be seen to repre-
sent an effective modulation at twice the resonance frequency,
as in Eq. (4), the bias voltage-dependent Duffing nonlinear-
ity coefficient βα is thus expected to be proportional to the
parametric modulation coefficient ζα, itself inversely propor-
dc. This is corroborated by the ∼60% increase in
tional to V th
βα when increasing the bias voltage from 20 V to 80 V, which
matches well the observed reduction in the parametric oscil-
lation threshold voltage by about the same amount. Piezo-
electric actuation can thus be used to enhance the nonlinear
response of both resonators, which is interesting for gener-
ating thermomechanical squeezing or entanglement12,14,44,45,
among others.
Conclusion -- A simple and noninvasive scheme, based on
piezoelectrically-induced stress control, for tuning the vibra-
tional mode frequencies and the nonlinear response of high-
Q suspended membrane resonators in a monolithic optome-
chanical array has been demonstrated. While enhancing their
nonlinear response is useful for various sensing applications,
tuning the mechanics and engineering electromechanical cou-
plings in such electro-optomechanical arrays is essential for
future collective optomechanics investigations.
FIG. 5. Driven response of the (1,1) and (2,2) modes of membrane
B (a) and A (b): Noise spectrum at resonance (dB) as a function
of the power of the modulation voltage at the mechanical resonance
frequency ωα.
for different drive powers and different bias voltages. These
scans, shown in Figs. 6, clearly show nonlinearly distorted res-
onance profiles. Such profiles can be accurately reproduced
by introducing a cubic Duffing nonlinearity in the equation of
motion for the mode dynamics
xα + γα xα + ω2
α [1 + βαx2
α ]xα = Fα + Fω cos(ωt),
(5)
where Fω is the amplitude of the driving force at frequency ω
and β is the Duffing nonlinearity coefficient. For a small non-
linearity and neglecting the thermal force, the Fourier compo-
nent amplitude at ω is approximately given by a solution of
the implicit equation54
xα (ω) =
(cid:113)
Fω
(ω2
α (1 + 3
4βαxα (ω)2)− ω2)2 + γ2
αω2
.
(6)
The solid lines in Figs. 6 show the results of global fits of this
equation to the data, using low drive power scans to fix ωα and
γα and leaving as free parameters βα and a global amplitude
for the driving force, the respective amplitudes being apppro-
priately scaled by the known applied powers. The fits match
well the observed spectra and yield values of βα (in units of
0×10−12) of 1.11±0.16 and 1.75±0.07 for Vdc = 20 V and
x2
80 V, respectively. Application of a bias voltage thus increases
the nonlinear response of membrane A to a driving force at the
304050607080-60-40-200304050607080 B(1,1) 20V B(1,1) 40V B(1,1) 70V B(2,2) 20V B(2,2) 40V B(2,2) 70VS(wa) (dB)(a) A(1,1) 20V A(1,1) 40V A(1,1) 70V A(2,2) 20V A(2,2) 40V A(2,2) 70VS(wa) (dB) P(wa) (dBm)(b)0500100015002000250030003500720.98720.99721.00721.01721.020500100015002000250030003500-33 dBm-32 dBm-31 dBm-30 dBmx/x0(a)-33 dBm-32 dBm-31 dBm-30 dBmx/x0w/(2p) (kHz)(b) ACKNOWLEDGMENTS
We acknowledge support from the Velux Foundations.
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|
1807.11633 | 1 | 1807 | 2018-07-31T02:31:18 | Terahertz Spin Transfer Torque Oscillator Based on a Synthetic Antiferromagnet | [
"physics.app-ph",
"cond-mat.mes-hall"
] | Bloch-Bloembergen-Slonczewski equation is adopted to simulate magnetization dynamics in spin-valve based spin-transfer torque oscillator with synthetic antiferromagnet acting as a free magnetic layer. High frequency up to the terahertz scale is predicted in synthetic antiferromagnet spin-transfer torque oscillator with no external magnetic field if the following requirements are fulfilled: antiferromagnetic coupling between synthetic antiferromagnetic layers is sufficiently strong, and the thickness of top (bottom) layer of synthetic antiferromagnet is sufficiently thick (thin) to achieve a wide current density window for the high oscillation frequency. Additionally, the transverse relaxation time of the free magnetic layer should be sufficiently larger compared with the longitudinal relaxation time. Otherwise, stable oscillation cannot be sustained or scenarios similar to regular spin valve-based spin-transfer torque oscillator with relatively low frequency will occur. Our calculations pave a new way for exploring THz spintronics devices. | physics.app-ph | physics | Terahertz Spin -- Transfer Torque Oscillator
Based on a Synthetic Antiferromagnet
Hai Zhong1, Shizhu Qiao2, †, Shishen Yan1, Hong Zhang3, Yufeng Qin3, Lanju Liang2,
Dequan Wei2, Yinrui Zhao1, Shishou Kang1, ‡
1 School of Physics, State Key Laboratory of Crystal Materials, Shandong University,
Jinan 250100, P. R. China
2 School of Opt-Electronic Engineering, Zaozhuang University, Zaozhuang 277160, P.
R. China
3 Department of Applied Physics, School of Information Science and Engineering,
Shandong Agricultural University, Taian 271018, P. R. China
†Corresponding author: [email protected]
‡Corresponding author: [email protected]
Abstract
Bloch-Bloembergen-Slonczewski equation is adopted to simulate magnetization
dynamics
in spin-valve based spin-transfer
torque oscillator with synthetic
antiferromagnet acting as a free magnetic layer. High frequency up to the terahertz
scale is predicted in synthetic antiferromagnet spin-transfer torque oscillator with no
external magnetic field if the following requirements are fulfilled: antiferromagnetic
coupling between synthetic antiferromagnetic layers is sufficiently strong, and the
thickness of top (bottom) layer of synthetic antiferromagnet is sufficiently thick (thin)
to achieve a wide current density window for the high oscillation frequency.
Additionally, the transverse relaxation time of the free magnetic layer should be
sufficiently larger compared with the longitudinal relaxation time. Otherwise, stable
oscillation cannot be sustained or scenarios similar to regular spin valve-based
spin-transfer torque oscillator with relatively low frequency will occur. Our
calculations pave a new way for exploring THz spintronics devices.
1
1. Introduction
Terahertz (THz) technology, with its frequency ranging approximately within
1011 -- 1013 Hz, has numerous applications, such as high-resolution imaging, nuclear
fusion plasma diagnosis, skin cancer screening, large-scale integrated circuit testing,
weapons detecting, wireless communication, etc. [1-3]. Typical THz sources based on
quantum cascade
laser, superconductor Josephson
junctions, electron
tubes,
accelerators, and other solid-state electronic devices have limitations of complex
setups or low temperature, etc. [4,5], hindering size shrinking down and consequently,
many potential applications.
However, fabricated by microscale or nanoscale technologies, spin transfer
torque (STT) oscillator could shrink down to micrometer or sub-micrometer size [6-8].
Moreover, synthetic antiferromagnets
(SAFs), consisting of
two or more
antiferromagnetic coupled ferromagnets separated by metallic spacers or tunnel
barriers [9], are attracting increasing attention in STT spintronics [10-17], because,
comparing with crystal antiferromagnets, they have considerably weak exchange
interactions and notably larger spatial scales, leading to an easy manipulation of
antiferromagnetic order [18]. Magnetization switching by spin-orbit torque is reported
in MgO/CoFeB/Ta/CoFeB/MgO
structure with
two CoFeB
layers
in
antiferromagnetic coupling through the Ruderman -- Kittel -- Kasuya -- Yosida (RKKY)
interaction, which may help reducing power consumption in magnetic memories with
low stray field [16]. Compared with single-layer free magnetic layer, STT oscillation
in SAF has higher output power and narrower linewidth [15].
Although acting as effective magnetic field, RKKY interaction may boost
magnetization oscillation frequency greatly into THz range [5,19,20], no results on
THz oscillation frequency has been reported to date in STT oscillator based on SAF,
neither experimentally nor theoretically. In this paper, the Bloch -- Bloembergen --
Slonczewski (BBS) equation is adopted in spin-valve-based STT oscillator with SAF
acting as the free magnetic layer, and THz oscillation frequency is achieved with
2
reasonable parameters under no applied magnetic field. Simulation shows that, in
order to achieve SAF STT oscillator with top frequency up to THz region,
antiferromagnetic coupling between SAF layers should be sufficiently strong, and
moreover, large (small) thickness of top (bottom) layer of SAF favors broad current
density window of stable oscillation.
2. Theoretical Model
Typically, coupled macro-spin Landau -- Lifshitz -- Gilbert (LLG) equations, where
the magnitude of magnetization keeps unchanged, are adopted to study magnetization
dynamics of two magnetic layer of SAF [21,22]. However, short -- wavelength magnon
excitation, diminishing magnetization [23,24], plays an important role in magnetic
relaxation, especially in thin film structures [25-28]. Moreover, all types of magnons,
with wavelengths short and long, are the concern of magnon spintronics [29-31].
Consequently, macro-spin theoretical method based on LLG equation cannot deal
with short -- wavelength magnon excitation. On the contrary, the Bloch -- Bloembergen
equation [32-34],
, (1)
with two magnetization relaxation parameters, longitudinal relaxation time T1, and
transverse relaxation time T2, rather than one Gilbert damping constant, is more
flexible, and short -- wavelength magnon excitation is included in T2. For more
information about the contribution of short-wavelength magnon excitation to
magnetic relaxation, please refer to Ref. [35]. Bloch -- Bloembergen -- Slonczewski
(BBS) equation has been established to study magnetic precession in regular STT
oscillator with a single magnetic layer acting as the free magnetic layer [35], which
demonstrated that T2 > T1 is crucial for stable STT oscillation.
In this study, we apply two coupled BBS equations to a spin valve structure with
SAF acting as the free magnetic layer. The BBS equation reads as
3
S0eff221ddyxzxyzMMMMtTTTeeeMMH
, (2)
where τSTT is the Slonczewski torque [36,37]. The spin valve with F0/N0/F1/N1/F2
structure is shown in Fig. 1. F0 is the fixed magnetic layer, with its magnetization
pinned along the -- z direction. Ferromagnetic layers F0 and F1 are separated by
normal metal layer N0. Ferromagnetic layers F1 and F2, with thickness of d1 and d2,
are antiferromagnetically coupled by RKKY exchange interaction through normal
metal layer N1, and the F1/N1/F2 SAF acts as the free magnetic layer of the STT
oscillator. To begin the calculation, we assume F1 and F2 both have uniaxial
magnetic anisotropy along z axis. The current is along the -- x direction, perpendicular
to film plane.
Fig. 1. Structure of spin valve with synthetic antiferromagnet (F1/N1/F2) acting as the
free magnetic layer used in this study.
3. Simulation and Discussion
The following simulations and discussions are based on Fig. 1 and Eq. (2), and
the parameters used in the simulations are listed in Table 1 unless otherwise specified.
Parameters related to SAF are based on Co/Ru/Co [14].
4
s0effSTT221ddyxzxyzMMMMtTTTeeeMMH
Table 1. Parameter values used in simulations, where Ms, HK, d1 and d2 are saturated
magnetization, magnetic anisotropy field, and thickness of F1 and F2, respectively. Jex
is the antiferromagnetic exchange parameter between F1 and F2. P is the spin
polarization of current.
Parameter
Value
Parameter
Value
Ms
HK
d1
d2
1.42×106 A/m
9.09×104 A/m
2 nm
8 nm
Jex
P
T2
T1
-- 5×10 -- 3 J/m2
0.3
0.75 ns
0.5 ns
Fig. 2 Stable magnetization oscillation represented by evolutions of (a) x component,
(b) z component of magnetization M1 of F1, (c) magnitude of M1, and (d) x
component of magnetization M2 of F2, where lines in (a) and (d) are stacked by
vertical axis offset for clearness.
5
Stable magnetization oscillation of the free magnetic layer, which is the
prerequisite of STT oscillator, could be achieved. As seen in Fig. 2(a) and (b), stable
oscillations of x and z components of F1 magnetization is reached within less than
20 ns at various current densities from 1.09×1011 A/m2 to 1.36×1011 A/m2 (the same
significant digits protocol for current density is kept in the following discussions). It
seems quite odd that the amplitudes of these two oscillations decrease with the
increasing of current density. This is caused by the fact that the density of
short-wavelength magnons increases with the increase in current density, and
short-wavelength magnons diminish the magnitude of magnetization [23,24], as seen
in Fig. 2(c). Similar oscillation of x component of F2 magnetization is demonstrated
in Fig. 2(d).
Fig. 3 Magnetization oscillation phases of F1 and F2 when j = 1.18×1011 A/m2: (a) Mx,
(b) My, (c) Mz, and (d) θ the angle between M1 and M2.
6
Phases in stable magnetization oscillation when j = 1.18×1011 A/m2 is depicted in
Fig. 3. The transverse part (Mx and My) of M1 and M2 are opposite in phase as seen in
Fig .3(a) and 3(b), and on the contrary, the longitudinal part, oscillating with twice the
frequency of the transverse part, are in the same phase as seen in Fig. 3(c). θ, the
angle between M1 and M2, is shown in Fig. 3(d), which oscillates with the same
frequency of the longitudinal part, ranging from 118° to 132°. The oscillation
frequency mentioned in the following means the frequency of transverse part of
magnetization, half the frequency of Mz and θ.
Fig. 4 (a) Magnetization trajectories of F1 (up) and F2 (down) at different current
densities, (b) details of magnetization trajectories of F2 in (a). Magnetization
trajectories of F1 (up) and F2 (down) when (c) the antiferromagnetic exchange
parameter in Table 1 is replaced by Jex = -- 0.7 J/m2 and (d) the thickness of F2 layer
in Table 1 is replaced by d2 = 4 nm.
7
Fig. 4(a) demonstrates the magnetization trajectories of F1 and F2, which
characterize two features. First, magnetization trajectories are not confined to a
spherical boundary surface, different from the conclusion of macro-spin LLG model
[36]. This is caused by the short-wavelength magnon excitation, which could also be
observed in Fig. 2(c). When j=1.36×1011 A/m2, magnetization trajectory is confined in
a small space, and this short-wavelength magnon excitation-induced oscillation
weakness should be well realized in STT oscillator application, because the output
power of the oscillator is related to oscillation amplitude [38].
Secondly, oscillation amplitude of F2, whose oscillation details are shown in Fig.
4(b), is significantly smaller than that of F1. In addition, this phenomenon is revealed
in Fig. 2(a), 2(d) and Fig. 3(a), 3(b), 3(c). The first reason behind this phenomenon is
the exchange interaction between F1 and F2. This interaction tends to magnetize F2
antiparallel to F1, then the spin current passed through F1 contains a relatively small
component that is transverse to the magnetization of F2, leading to a small amplitude
of F2 oscillation. If the exchange interaction is weakened, the amplitude of F2 should
be larger, which is indeed the simulation result shown in Fig. 4(c), where the
antiferromagnetic exchange parameter Jex = -- 0.7 J/m2. The second reason is related to
the thickness of F1 and F2. The saturation magnetizations and the cross-sectional
sizes of F1 and F2 are set as the same in simulations, where the thickness of F1,
d1 = 2 nm, and the thickness of F2, d2 = 8 nm. Under such a circumstance, the
oscillation amplitude of F2 is smaller than that of F1 even though that the same
amount of transvers spin current is absorbed by each of them. This is demonstrated in
Fig. 4(d), where d1 = 2 nm and d2 = 4 nm, and comparing with Fig. 4(a), the
oscillation amplitude of F2 is considerably larger.
8
Fig. 5 Dependence of the Mx frequency of stable magnetization oscillation on current
density when antiferromagnetic exchange coupling between F1 and F2 is relatively (a)
strong and (b) weak.
Since the magnetization oscillation amplitude of F1 is notably stronger than that
of F2, in the following discussion, we will focus on the magnetization dynamics of F1.
The oscillation frequency dependence on current density is shown in Fig. 5(a).
Different from regular spin-valve based oscillator [35], the oscillation frequency of F1
in spin-valve-based SAF oscillator increases with the increase in current density in a
distinct nonlinear manner, described as follow. In the relatively broad and weak
current density region, the frequency increasing is mild, while in the other relatively
narrow and strong current density region, the frequency increasing is acute, and the
stronger the current density is, the more acute the frequency increase becomes. The
frequency surpasses 1 THz (the frequency of Mz and M can surpass 2 THz) when
Jex = −5×103 J/m2 and j = 1.36×1011 A/m2. This is because, acting as effective
magnetic field, RKKY exchange interaction between F1 and F2 could boost the
magnetization oscillation frequency to a large extent [19]. Moreover, the increase in
the exchange interaction between F1 and F2, which could be realized by adjusting the
thickness of normal metal layer N1 between F1 and F2 [9,39], leads to a higher
oscillation frequency and wider frequency window.
9
Another interesting scenario occurs when the exchange interaction is too weak,
as seen in Fig. 5(b). The oscillation frequency decreases with the increasing of current
density, similar to the situation of regular spin-valve based oscillator [35], although
the former has a slightly higher frequency owing to the additional exchange field in
SAF. Similar change of blue shift to red shift of oscillation frequency dependence on
current density due to applied field is reported in the studies based on LLG equation
[22,40]. From Fig. 5, it can be observed that it is important to have strong RKKY
exchange interaction between F1 and F2 to achieve a working THz SAF STT
oscillator. It should be pointed out that RKKY exchange coupling is sensitive to the
thickness of the normal metal layer in SAF, and whose fluctuation in space may
compromise the performance of THz SAF STT oscillator [41], which may be one of
the reasons why the THz SAF oscillator is difficult to achieve experimentally.
Although a high current density leads to a high frequency, even to THz zone,
when Jex is sufficiently large, the oscillation amplitude is weakened sharply when the
current density approaches the maximum value for the excitation of short-wavelength
magnons, as seen in Fig. 2(a) and Fig. 4(a). This phenomenon leads to a sharp
decrease of output power while approaching the maximum oscillation frequency and
it seems inevitable: as seen in Fig. 4(c), we could increase the oscillation amplitude of
the maximum current density (j = 1.53×1011 A/m2) by weakening the RKKY
exchange interaction (Jex = -- 0.7 J/m2). However, as seen in Fig. 5(b), weak exchange
interaction leads to low oscillation frequency. This sharp decrease of output power
may be another reason behind the difficulty in observing the THz oscillation
experimentally, considering the small output power of the STT oscillator. Neglecting
the excitation of short-wavelength magnons could be one of the reasons behind the
absence of prediction for THz oscillation frequency by macro-spin LLG equation
simulation, because wave energy is proportional to the square of frequency when the
amplitude is fixed, which implies that the energy input to oscillator is 400 times larger
for 1-THz oscillation compared with the 50-GHz oscillation in the macro-spin LLG
simulation.
10
Fig. 6 Dependence of maximum and minimum current densities (jmax, jmin) for stable
magnetization oscillation, and corresponding maximum and minimum oscillation
frequencies (fmax, fmin) on the thickness of F2 (a), (b) and F1 (c), (d). The inset of (d)
shows F1 oscillation frequency dependence on current density when d1 = 4 nm and
d2 = 8 nm.
The effects of thickness of F2 and F1 on the magnetization oscillation are
depicted in Fig. 6. The influence of d2 on maximum and minimum current densities
(jmax, jmin) for stable magnetization oscillation, and corresponding maximum and
minimum oscillation frequencies (fmax, fmin) are shown in Fig. 6 (a) and (b). With the
decrease in d2, where d1 = 2 nm, jmax keeps unchanged within two significant digits
after decimal point, while jmin increases rapidly, which leads to the dramatic shrinking
of current density window (jmax -- jmin) and when d2 < 3.3 nm, stable oscillation cannot
be achieved. On the contrary, fmin barely changes when d2 ≥ 3.75 nm, while fmax
increases evidently with the decreasing of d2. fmin increases dramatically when
11
d2 < 3.75 nm, leading to the shrinking of frequency window (fmax -- fmin) under this
circumstance.
The impact of variation in d1 while d2 = 8 nm is different to an extent. As seen in
Fig. 6(c), both jmax and jmin increase with the increasing of d1, and the current density
window is maximized when d1 = 2.5 nm. The current density window is approaching
0 when d1 > 4 nm. As seen in Fig. 6(d) with the logarithmic vertical coordinate axis,
fmin does not vary considerably and fmax decreases slower and slower with the increase
in d1 when d1 < 3.75 nm, but it drops sharply to ~50 GHz when d1 > 3.75 nm, and
peculiarly, fmax < fmin in this circumstance. This is further illustrated in the inset of Fig.
6(d), where the oscillation frequency of ~50 GHz decreases with the increase in the
current density, similar to the weak exchange interaction scenario in Fig. 5(b). The
exchange magnetic field in F1 is proportional to Jex/d1 [14], which may partially
explain why the large d1 scenario is similar to the weak exchange interaction scenario.
Consequently, Fig. 6 indicates that, in order to achieve better SAF oscillators, the
thickness of F2 should be sufficiently large to broaden the current density window,
and with the consideration of current density window and magnetic anisotropy, the
thickness of F1 should be sufficiently small to increase fmax and also to broaden the
frequency window. It should be pointed out that some error in fmax may occur due to
our significant digits protocol and the sharp increase in frequency when the current
density approaching maximum value, as seen in Fig. 5(a). We ran the simulations
under a higher standard of significant digits protocol when d1 > 3.75 nm, but no
significant difference has been found. Even if high frequency was achievable when
d1 > 3.75 nm, the tuning of high frequency by current is very inconvenient, and may
even be impossible, because a sharp increase in frequency occurs in a very narrow
range of current density.
Similar to the scenario of the regular-spin-valve-based STT oscillator, the
short-wavelength magnon excitation, contributing to transverse relaxation time T2, has
crucial influences on magnetization oscillation. Fig. 7(a) depicts the influence of T2 on
12
the maximum and minimum current densities required for stable magnetization
oscillation. In this case, the current density window broadens dramatically, which
favors the manipulation of SAF STT oscillator, with the increase in T2, and it shrinks
to zero if T2 < 0.52 ns, which means that, under this circumstance, stable
magnetization oscillation cannot be reached.
Fig. 7 (a) Influence of transverse relaxation time T2 on maximum and minimum
current densities (jmax and jmin) for stable magnetization oscillation, (b) F1 stable
oscillation frequency dependence on current density when F2 is pinned along the -- z
direction; the inset in Fig. 7(b) shows the evolution of F1 magnetization of different
current densities.
Finally, we should point out that no significant difference happens to F1 when F2
is pinned along the -- z direction. The frequency dependence on the current density in
stable oscillation of F1 in this circumstance is shown in Fig. 7(b), which also clearly
shows a nonlinear behavior. The evolution of magnetization with different current
densities are depicted in the inset of Fig. 7(b), which shows a behavior similar to that
demonstrated in Fig. 2(a).
4. Conclusion
13
In summary, considering the short-wavelength magnon excitation, we simulate
magnetization oscillation in spin-valve based spin-transfer torque oscillator with a
synthetic antiferromagnet acting as the free magnetic layer by coupled macro-spin
Bloch -- Bloembergen -- Slonczewski equations. Magnetization oscillation frequency
increases with the increasing of current density in a nonlinear manner to terahertz
region when an antiferromagnetic coupling between the two synthetic antiferromagnet
layers is relatively strong, which, however, decreases with the increase in the current
density in a nearly linear manner when the coupling is too weak. The thickness of F2
(F1) should be sufficiently large (small) to achieve a better oscillator performance.
Comparing with the longitudinal relaxation time, the transverse relaxation time of free
magnetic layers should be sufficiently larger in order to achieve broad current density
window of stable oscillation. The thickness fluctuation of normal metal layer in
synthetic antiferromagnet, the sharp decrease in output power while approaching the
terahertz frequency range, and the lack of consideration of short-wavelength magnon
excitation may be among the reasons behind the absence of experimental observation
and macro-spin LLG theoretical prediction of terahertz oscillation frequency.
Spin-transfer torque oscillator based on synthetic antiferromagnet may shrink the
terahertz oscillator and broaden its applications.
ACKNOWLEDGEMENTS
This research is supported by the National Basic Research Program of China
(Grant No. 2015CB921502), the key program of NSFC No. 11434006, and NSFC
Nos. 11647034, 11674187, 11474184, and 61735010, the Natural Science Foundation
of Shandong Province (Grant No. ZR2017MF005).
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17
|
1904.11198 | 2 | 1904 | 2019-04-26T17:30:25 | Stealth acoustic materials | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | We report the experimental design of a 1D stealth acoustic material, namely a material that suppresses the acoustic scattering for a given set of incident wave vectors. The material consists of multiple scatterers, rigid diaphragms, located in an air-filled acoustic waveguide. The position of the scatterers has been chosen such that in the Born approximation a suppression of the scattering for a broad range of frequencies is achieved and thus a broadband transparency. Experimental results are found in excellent agreement with the theory despite the presence of losses and the finite size of the material, features that are not captured in the theory. This robustness as well as the generality of the results motivates realistic potential applications for the design of transparent materials in acoustics and other fields of wave physics. | physics.app-ph | physics | Stealth acoustic materials
V. Romero-García,1, ∗ N. Lamothe,1 G. Theocharis,1 O. Richoux,1 and L. M. García-Raffi2
1Laboratoire d'Acoustique de l'Université du Mans,
LAUM - UMR 6613 CNRS, Le Mans Université,
Avenue Olivier Messiaen, 72085 LE MANS CEDEX 9, France
2Universitat Politècnica de València, Camíŋ de vera s/n, 46022, València, Spain
(Dated: April 29, 2019)
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We report the experimental design of a 1D stealth acoustic material, namely a material that
suppresses the acoustic scattering for a given set of incident wave vectors. The material consists of
multiple scatterers, rigid diaphragms, located in an air-filled acoustic waveguide. The position of the
scatterers has been chosen such that in the Born approximation a suppression of the scattering for
a broad range of frequencies is achieved and thus a broadband transparency. Experimental results
are found in excellent agreement with the theory despite the presence of losses and the finite size of
the material, features that are not captured in the theory. This robustness as well as the generality
of the results motivates realistic potential applications for the design of transparent materials in
acoustics and other fields of wave physics.
I.
INTRODUCTION
Wave scattering represents one of the most studied
phenomena in wave physics. When a system with re-
fractive index contrast between the obstacle and the sur-
rounding material is radiated by an incident wave, the
incident energy is both radiated and absorbed by the
obstacle, forming a scattering pattern which strongly
depends on the geometry and size of the obstacle as
well as on the frequency-dependent properties of its con-
stituents. The control of the scattering of waves repre-
sents a major topic of interest in acoustics1,2, photonics3
and electromagnetism4 due to the vast possibilities in
fundamental physics with potential applications. Com-
plex media5 and recently metamaterials6, have been
shown as potential candidates to control the scattering
of different types of waves.
In particular it has been
shown that metamaterials in both electromagnetism7 and
acoustics8 can be used to induce a dramatic drop in the
scattering cross section of cylindrical and spherical ob-
jects, making them nearly invisible or transparent to an
outside observer.
Ordered media, known as photonic9 -- 11 or phononic
crystals12 -- 14 in optics and acoustics respectively, have
been exploited due to their particular dispersion relation,
presenting band gaps for different ranges of frequencies.
In periodic structures, order is present on every scale, al-
lowing for multiple Bragg scattering and localized states
to form a band gap when the wavelength of the prop-
agating wave is of the order of a multiple of the dis-
tance between scatterers.
In the Born approximation,
periodic structures are transparent at low frequencies15.
Among other potential applications, these systems have
motivated tunable frequency filters16,17, beam forming
devices18, waveguides19, wave traps20 -- 22 and slow wave
systems23 -- 26.
On the other hand, disordered media are also good
alternatives to control wave scattering in a different
manner27. Waves entering in a disordered material are
scattered several times before exiting in random direc-
tions, producing interferences leading to interesting, and
sometimes unexpected, physical phenomena28. For ex-
ample, in the acoustical29 or optical30 analogy of Ander-
son localization, multiple scattering creates modes with
a high level of spatial confinement in which the wave re-
mains in the sample for a long time. Contrary to the
periodic case, configurations of multiple scatterers with
random and independent coordinates have no order at
any scale and as a consequence no characteristic length
appears in the system. Therefore no band gap is formed
in such kind of structured materials and wave is randomly
scattered.
Other approaches based on complex structures with
correlated disorder3,31 -- 44, created by introducing local
correlations between positions of scatterers in an oth-
erwise random ensemble, have been used to control the
overall scattering strength of the material and create a
strong wavelength dependence of the transmission.
If
the structure is properly designed, the system can even
present isotropic band gaps39,40 in the absence of peri-
odicity. Such disordered materials are known as hyper-
uniform materials33,42 and nearly suppress all scattering
at low frequencies. Hyperuniform materials are a sub-
set of the systems known as stealth materials, referring
to configurations of multiple scatterers that completely
suppress scattering of incident radiation for a set of wave
vectors, and thus, are transparent at these wavelengths.
The hyperuniform materials represent the low-k limit of
the stealth materials and are, counterintuitively, disor-
dered and highly degenerate.
In this work we construct disordered stealth configu-
rations by engineering the material properties in a con-
trolled manner in such a way that the system prevents
scattering only at prescribed wavelengths with no restric-
tions on any other wavelengths. In particular we focus on
the suppression of the Bragg scattering of the correspond-
ing periodic case and make the structured system trans-
parent for a broadband range of frequencies. The inverse
problem to generate the configuration of multiple scat-
terers with a specific scattering properties is non-trivial,
2
factor. The scattered intensity reads as
ers Ψs((cid:126)q) =(cid:80)N
of the first order are considered; absorption, refraction
and higher order scattering can be neglected (kinematic
diffraction). The direction of any scattered wave is de-
fined by its scattering vector (cid:126)G = (cid:126)ks − (cid:126)k0, where (cid:126)ks
and (cid:126)k0 are the scattered and incident beam wavevec-
tors, being θ incidence angle. For elastic scattering,
(cid:126)ks = (cid:126)k0 = (cid:126)k = 2π/λ and then G = (cid:126)G = 4π
λ sin(θ).
The amplitude and phase of this scattered wave will be
the vector sum of the scattered waves from all the scatter-
i=1 fie−ı (cid:126)G(cid:126)ri, with fi the atomic structure
N(cid:88)
N(cid:88)
normalized by 1/(cid:80)N
1(cid:80)N
fje−i (cid:126)G(cid:126)rj × N(cid:88)
N(cid:88)
The structure factor, S( (cid:126)G), is defined as this intensity
I( (cid:126)G) = Ψs( (cid:126)G).Ψ∗
fjfke−ı (cid:126)G((cid:126)rj−(cid:126)rk).
fjfke−ı (cid:126)G((cid:126)rj−(cid:126)rk).
N(cid:88)
N(cid:88)
fkei (cid:126)G(cid:126)rk
S( (cid:126)G) =
j=1
k=1
j=1
k=1
j=1 f 2
j
(1)
(2)
=
=
s( (cid:126)G)
If all the scatterers are identical, then
j=1 f 2
j
j=1
k=1
N(cid:88)
N(cid:88)
FIG. 1.
(Color online) Schematic example for the case of
square periodicity in 2D with a lattice period L. (a) Direct
space. (b) Reciprocal space.
as multiple solutions are conceivable. The approach is
based on the optimization of the structure factor which,
in the Born approximation, can be used as the outcome
of a scattering experiment. The configuration of multi-
ple scatterers is used to construct one dimensional (1D)
stealth structures made of rigid diaphragms embedded in
an air-filled waveguide. The system is analyzed by using
the Transfer Matrix Method (TMM). Full wave numeri-
cal simulations have been done by using Finite Element
Method (FEM). The system is analyzed considering the
intrinsic viscothermal losses of the system. Experiments
are performed to validate the theoretical results.
II. SCATTERING BY MULTIPLE SCATTERERS
I( (cid:126)G) = f 2
e−ı (cid:126)G((cid:126)rj−(cid:126)rk),
(3)
A. Structure factor
We are interested in the study of the scattering of
waves by disordered materials made of a discrete dis-
tribution of point scatterers.
In order to theoretically
and numerically deal with such distribution of scatter-
ers, the space is periodically divided using a lattice F
which unit cell has a volume V and in which N scat-
terers are distributed at the positions (cid:126)ri (i = 1, . . . , N)
as schematically shown in a two dimensional example in
Fig. 1(a). The lattice F has a reciprocal lattice F∗ in
which the lattice sites are specified by the reciprocal lat-
tice vector, (cid:126)G, with the property (cid:126)G (cid:126)R = 2πm for all lattice
places (cid:126)R, where m = ±1,±2, .... The reciprocal funda-
mental unit cell has a volume V∗ = (2π)d/V (where d
is the dimension of the d-dimensional Euclidean space
in which the problem is defined). Although this choice
introduces anisotropy, the periodic boundary conditions
do not affect the generality of the properties discussed in
this work.
Let us consider the scattering of a beam with wave-
length λ by the assembly of N scatterers. We assume
that the scattering is weak, so that the amplitude of
the incident beam is constant throughout the sample
volume (Born approximation), and only scattered waves
j=1
k=1
so
N(cid:88)
N(cid:88)
j=1
k=1
S( (cid:126)G) =
1
N
e−ı (cid:126)G((cid:126)rj−(cid:126)rk) =
1
N
(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)(cid:12) N(cid:88)
j=1
(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)(cid:12)2
eı (cid:126)G(cid:126)rj
. (4)
Therefore the structure factor S( (cid:126)G), is proportional to
the intensity of scattering of incident radiation from a
configuration of N scatterers.
It is worth noting here
that the structure factor can be also related with the
scattering cross section as follows
N(cid:88)
N(cid:88)
j=1
k=1
dσ
dΩ
= f 2
e−ı (cid:126)G((cid:126)rj−(cid:126)rk) = f 2N S( (cid:126)G),
(5)
where σ is the total cross section and Ω is the solid angle.
Notice that the Laue condition15,45 implies that the
constructive interferences will occur provided that the
change in wave vector between the incident and reflected
waves was a vector of the reciprocal lattice. Therefore
(cid:126)G
the Bragg scattering condition is (cid:126)k =
2 sin θ . In the case
1D (θ = π/2), the wavevectors are collinear and then,
(cid:126)k = (cid:126)G/2.
-3L/2-L/2L/23L/2-3L/2-L/2L/23L/22/L0-2/L-2/L02/L 3
FIG. 2.
(Color online) Representation of the structure factor for (a) a periodic, (b) a random, (c) a hyperuniform and
(d) a stealth distributions of N = 30 scatterers. The hyperuniform configuration is obtained to reduce scattering in the range
k ≤ kB/2.5 (where kB = πN/L is the Bragg condition of the corresponding periodic configuration). The stealth configuration
is optimized for kB/5 ≤ k ≤ kB/1.5. The target range of frequencies of the two last cases are shown by the yellow area in (c)
and (d).
B. Design of the discrete materials with prescribed
scattering properties
The optimization procedure consists of prescribing the
scattering characteristics by using the structure factor
and constructing configurations of multiple scatterers
that give rise to these targeted value. In contrast to the
real-space methods, we target information in reciprocal
space to construct configurations whose structure factor
exactly matches the candidate structure factor for a set
of wavelengths.
The objective function is based on the structure factor
S( (cid:126)G). For a given limit of wave vectors, fixing the opti-
mization domain Ω in the reciprocal space, the structure
factor should have a target value, Sop, for all the wave
vectors in Ω. Then, the objective functions will be based
on the following expression
φ((cid:126)r1, . . . , (cid:126)rN ) =
S( (cid:126)G) − Sop
,
(6)
(cid:17)
(cid:16)
(cid:88)
(cid:88)
(cid:126)G∈Ω
(cid:126)G∈Ω
(cid:118)(cid:117)(cid:117)(cid:116) 1
N − 1
σ =
(cid:80)
and a standard deviation function
S( (cid:126)G) − µ2,
(7)
where µ = 1
(cid:126)G∈Ω S( (cid:126)G) is the mean value in the target
N
range of wave vectors. The optimization algorithm will
look for configurations of multiple scatterers (cid:126)ri that si-
multaneously minimizes the potential and the standard
deviation function.
C. Different kind of materials based on S( (cid:126)G).
Examples in 1D
The interest of this work is focused on stealth ma-
terials, which are built from a configuration of multi-
ple scatterers whose structure factor is exactly zero for
some set of wavelengths. In the low-k limit, several dis-
ordered systems, known as hyperuniform33,37,39 -- 42,44,46
materials, nearly suppress all scattering. These systems
have the property that limk→0 S( (cid:126)G) = 0, i.e., infinite-
wavelength density fluctuations vanish. Following this
definition, we can see that periodic , i.e. crystalline con-
figurations, are by definition, in the Born approximation,
hyperuniform since they suppress scattering for all wave-
lengths except those associated with Bragg scattering.
It is worth noting here that other kind of materials can
be defined by using the structure factor. For example,
equiluminous materials scatter waves with the same in-
tensity for a set of wave vectors. The structure factor for
this class of materials is simply a constant for a set of
wave vectors. Subsets of equiluminous materials include
super-ideal gases S( (cid:126)G) = 1 as well as the stealth materi-
als S( (cid:126)G) = 0. Super-ideal gases are single configurations
of multiple scatterers whose scattering exactly matches
that of an ensemble of ideal gas configurations, or Pois-
son point distributions, for a set of wave vectors, being
S( (cid:126)G) = cte.
Figure 2 shows the 1D structure factor for several con-
figurations made of N = 30 point scatterers in a unit cell
of length L. The first analysis is done for the periodic
case in which the system has a periodicity of L/N (see
Fig. 2(a)). In this case, the structure factor can be ob-
tained analytically. If the Bragg condition is fulfilled the
structure factor takes the value N for kB = N π/L. For
wavelengths out of the Bragg condition, the structure
factor is zero. This means that a periodic distribution
of scatterers suppress scattering for all wavelengths ex-
cept those associated with Bragg scattering, correspond-
ing to a structure factor with a form of Dirac comb as
shown in Fig. 2(a). As soon as the structure becomes
fully random, the periodic behavior of the structure fac-
tor is broken and random scattering is produced (see Fig.
2(b)). The structure factor for a hyperuniform distribu-
tion of scatterers is shown in Fig. 2(c). The range of
00.51-0.500.501234500.51-0.500.501234500.51-0.500.501234500.51-0.500.5012345 frequencies in which scattering is suppressed translates
with the cancellation of the structure factor. As it can
be seen, the suppression of the scattering is produced
around k = 0. Moreover, the structure factor peaks at
wave vectors corresponding to the characteristics length
scales of the periodic distribution, among them the first
Bragg peak meaning that the system presents some hints
of periodicity. This result is in agreement with those ob-
tained in recent works showing that hyperuniform ma-
terials present isotropic band gaps.37,39,40. Figure 2(d)
shows the results for a stealth material optimized in the
range kB/5 ≤ k ≤ kB/1.5. Effectively, the structure
factor for such configuration of multiple scatterers is ex-
actly zero for the prescribed set of wavelengths. This
means that this structure completely suppress scatter-
ing of incident radiation for this set of wave vectors, and
thus, is transparent at these wavelengths.
III. STEALTH MATERIALS FOR ACOUSTIC
TRANSPARENCY
A. Stealth distribution of point scatterers
In this Section, we design a 1D stealth configuration
made of N = 25 scatterers embedded in a fluid medium
of length L = 1 m for making the system transparent in
a broad range of frequencies around the corresponding
Bragg frequency of the equivalent periodic distribution
of scatterers with periodicity L/N. The range of wave
numbers to be optimized is 0.92kB < k < 1.06kB.
In
particular, if we consider air as the fluid medium of the
waveguide (with c = 340 m/s the speed of sound), the
range of frequencies to be optimized corresponds to the
domain f = [3910, 4504] Hz being fB = cN/L = 4250 Hz
the Bragg frequency.
The resulting configuration of multiple scatterers ob-
tained from our optimization procedure is shown in the
upper panel of Fig. 3 with blue dots. The structure fac-
tor of the periodic case presents a peak at the Bragg fre-
quency of the system, as shown in Fig. 3. The optimized
stealth structure has a minimum of the structure factor
in the optimization range of frequencies (yellow region).
B. Physical system: 1D waveguide with
diaphragms
To implement the stealth material we consider the
propagation of sound waves within an air-filled cylindri-
cal tube (with density and sound velocity of air defined
as ρ and c respectively) of section S = πR2 with di-
aphragms of length dn and section sn = πr2
n placed along
the waveguide at positions (cid:126)xn, as shown in Fig. 4. The
tube and the diaphragms are made of aluminium that
can be considered acoustically rigid for the purpose of
this work. The target frequency range is well below the
first cutoff frequency of higher propagation modes in the
4
FIG. 3. (Color online) Structure factor for the periodic and
stealth material. Upper panel represents both the periodic
configuration [red squares ((cid:4))] and the stealth configuration
[blue dots (•)]. The positions of the scatterers in the stealth
configurations are: xn/L = [0.083, 0.099, 0.116, 0.15, 0.211,
0.256, 0.273, 0.289, 0.305, 0.322, 0.338, 0.354, 0.439, 0.46,
0.523, 0.582, 0.653, 0.673, 0.735, 0.755, 0.8, 0.854, 0.871,
0.904, 0.93]. Lower panel shows the structure factor for the
periodic distribution [black dashed line, (−−)] and for the
stealth material [blue continuous line (−)]. Yellow area shows
the frequency range of the optimization.
waveguide, therefore the problem can be considered as
one-dimensional. Moreover the size of the diaphragms
can be considered small enough to be in the Born ap-
proximation.
1. Theoretical model: Transfer Matrix Method
The sound waves that propagate in the proposed
acoustic structure are subject to the viscothermal effects
on the walls which are taken into account by considering
a complex expression for both the impedance and the
wave number. In our case, we used the model of losses
from Ref. [25], namely we replace the wave number and
the characteristic impedance by the following expressions
(cid:32)
(cid:32)
kq =
ω
c
1 +
(cid:33)
(cid:33)
,
(8)
(9)
√
(1 + ı)
2Rq/δ
√
(1 + ı)
2Rq/δ
(1 + (γ − 1))
√
(1 − (γ − 1))
Pr
√
Pr
ρc
Sq
,
1 +
Zq =
where δ =(cid:112)2µ/ρω is the viscous boundary layer thick-
ness, µ = 1.839 10−5 kg m−1 s1 being the viscosity of
air, Pr = 0.71 the Prandtl number and γ = 1.4 the heat
capacity ratio of air. Notice that these expressions corre-
spond for the wavevector and impedance of a cylindrical
tube of radius Rq and section Sq.
The transfer matrix between the two faces of the sys-
tem, T, extending from x = 0 to thickness x = L, pre-
senting N diaphragms placed at position (cid:126)xn, relates the
00.20.40.60.81350040004500500000.511.52 5
(14)
(15)
in Eq. (11) as47
T =
R− =
2eıkL
,
T11 + T12/Zw + ZwT21 + T22
T11 + T12/Zw − ZwT21 − T22
,
T11 + T12/Zw + ZwT21 + T22
−T11 + T12/Zw − ZwT21 + T22
T11 + T12/Zw + ZwT21 + T22
,
R+ =
(16)
where the superscripts (+,−) denote the incidence di-
rection, i.e., the positive and negative x-axis incidence
respectively. We notice that, if the system was symmet-
ric, then, T11 = T22, and as a consequence, R+ = R−.
The reciprocal behaviour of the system can be seen from
the fact that its determinant is one (T11T22−T12T21 = 1).
2. Experimental set-up
The experimental set-up was made of a cylindrical
waveguide with radius R = 1.25 cm, which cut-off fre-
quency is around 8000 Hz well above the analyzed range
of frequencies. Two types of pieces were built: the con-
nections [Fig. 4(c)] and the separators [Fig. 4(d)]. Two
types of connections were built, the ones with no di-
aphragm, in order to measure the properties of an empty
waveguide, and the ones with a diaphragm, in order to
obtain the scattering properties of the stealth material.
The dimensions of the diaphragms were dn = d = 2 mm
and rn = 1.04 cm, dimensions for which the Born approx-
imation is fulfilled. The separators had different lengths
in order to fit all the positions xn in the stealth material.
A picture of the stealth material once the different pieces
are properly assembled is shown in Fig. 4(e).
A loudspeaker is used to generate a plane wave field,
and a single microphone was used to measure the transfer
functions between the signal provided to the loudspeaker
and the sound pressure at four locations in order to ex-
perimentally obtain the reflection and transmission coef-
ficients of the stealth material (the 1 microphone tech-
nique was used, see Ref. [47]). On the other side of the
tube, an anechoic termination with less than 5% of re-
flection in the analyzed frequency range is used.
The stealth material is experimentally analyzed in the
forward and in the backward incidence directions. To do
that, we have to reverse the source and the anechoic ter-
mination in order to experimentally obtain all the scat-
tering parameters, i.e., R+, R− and T .
IV. RESULTS
In this Section, we analyze and present the theoretical
results obtained from the TMM and the experimental re-
sults for the reflection, transmission and absorption co-
efficients of the designed stealth material. In addition to
these results, we have used a numerical approach based
on the Finite Element Method (FEM) to perform full
FIG. 4. (Color online) Schematics of both a three dimensional
view (a) and the cross section (b) of the cylindrical waveguide
along the n-th diaphragm.
(c)
Connections: left diaphragme and flat connection for empty
tube. (d) Separators. (e) Picture of the stealth material.
(c-e) Experimental set-up.
sound pressure, p, and normal acoustic flux, v, between
its two faces by using(cid:20) p
(cid:21)
(cid:20) p
(cid:21)
v
x=L
= T
v
x=0
,
(10)
where
with
and
(cid:21)
(cid:20) T11 T12
T21 T22
=
N(cid:89)
i=1
T =
TwiTdi ,
(11)
(cid:20)
Twi =
cos(kwwi) −ıZw sin(kwwi)
sin(kwwi)
cos(kwwi)
− ı
Zw
(cid:20)
Tdi =
cos(kddi) −ıZd sin(kddi)
sin(kddi)
cos(kddi)
− ı
Zd
(cid:21)
(cid:21)
(12)
(13)
describing the propagation through a waveguide of length
wi and a diaphragm of thickness di.
The reflection and transmission coefficients can be di-
rectly calculated from the elements of the matrix given
2Rwnnn+1n-1hn2rn-1xndnO(a)(b)(c)(d)(e) 6
wave numerical simulations in order to check that the
possible evanescent coupling between scatterers is weak
and can be neglected. In the numerical model the vis-
cothermal losses were accounted for using the effective
parameters defined above for each domain. An incident
plane wave is used as excitation of the system and per-
fectly matched layers were placed at the boundaries of the
numerical domain to avoid unexpected reflections. The
mesh is designed such as to ensure a maximum element
size of λB/20 (being λB = k−1
B = L/N/π).
We start by the analysis of the lossless case. In Fig.
5(a) we represent the scattering coefficients of the peri-
odic distribution of scatterers. The Bragg scattering is
shown in the target range of frequencies with an strong
reduction of the transmission and an enhancement of the
reflection, representing the band gap of the structure.
The fact that we are dealing with finite structures ex-
plains the lobes of the reflection and transmission coef-
ficients out of the band gap that corresponds to Fabry-
Perot resonances.
Figure 5(b) shows the scattering coefficients of the de-
signed stealth material in the lossless case. The reflection
coefficient is dramatically reduced and the transmission
is almost one for the target range of frequencies. There-
fore, the stealth material can be considered as transpar-
ent, even if N scatterers are placed. For the frequencies
out of the optimization range the system is not transpar-
ent. We notice that in this lossless case, R+=R−. The
differences between the numerical and the analytical re-
sults out of the target frequencies shows that the evanes-
cent coupling between the scatterers are not negligible.
However in the optimization range, where the scattering
is suppressed, the coupling is weak and the transparency
of the system is shown by the numerics and analytics.
Therefore, the optimization procedure is robust with re-
spect to the evanescent coupling.
We analyze now the lossy case in order to show their
effects on the scattering properties of the stealth mate-
rial. Numerical, theoretical and experimental results are
compared in Figs. 5(c) and 5(d).
In this case, as the
stealth material is not symmetric, R+ (cid:54)= R−, but being
reciprocal T + = T − = T . We start by analyzing the
results for the system excited from the right side (for-
ward direction, Fig. 5(c)). In the optimized frequency
band, the values of the reflection coefficient are nearly
zero while the transmission coefficient has been reduced
with respect to the lossless case. However the coefficients
keep the flat behavior also shown in the lossless case. In
order to check the transparency of the stealth material,
we compare its transmission coefficients with the corre-
sponding empty waveguide. In the optimized range of fre-
quencies the transmission of the stealth material matches
the transmission of the empty tube in very good agree-
ment between numerics, analytics and experiments. As
in the lossless case, out of the optimization range, the
system is not transparent.
S(− (cid:126)G) = S( (cid:126)G), i.e.
One of the properties of the structure factor is that
the scattered intensity should be
FIG. 5. (Color online) Analysis of the scattering produced
by the stealth material. In the Figure the transmission, T 2,
[reflection, R2,] analytically and numerically calculated are
) and red dashed (−−)
represented by the shaded pink (
) and blue continuous (−)
lines respectively [shaded blue (
lines respectively] and the experimental values are represented
by red squares ((cid:3)) [blue triangles ((cid:52))]. (a) Scattering coeffi-
cients of (a) the periodic distribution in the lossless case, (b)
the stealth material in the lossless case, (c) and (d) the stealth
material in the lossy case excited from the forward and back-
ward incidence directions respectively. Black (−) continuous
line and black circles ((cid:13)) represent the transmission coeffi-
cient of the empty waveguide, theoretical and experimental
values respectively. (e) R+ − R− from the TMM ( ) and
experimental results ((cid:70)).
the same in opposite directions even if the configuration
of multiple scatterers conforming the stealth material is
not symmetric, i.e., the reflection coefficient from both
sides of the structure should be equal. Figure 5(d) ana-
lyzes the same coefficients as Fig. 5(c) but evaluated for
00.5100.5100.5100.513500400045005000-0.2-0.100.10.2 the backward incidence direction, having a similar be-
havior as the opposite direction. Figure 5(e) shows that
the difference between the amplitudes of the reflection
coefficients evaluated from each side of the stealth mate-
rial is less than 3% in the whole frequency range. The
slightly differences are due to the fact that the analyzed
system is finite and the optimization procedure is based
on an infinite one. Out of the target frequency range, the
differences are bigger because the scattering is stronger
than in the optimization range due to finite size effects
of the system. However, the differences between the two
sizes remain small than 3%.
Finally, we want to point out that the reflection coef-
ficient of all the analyzed systems in Figs. 5(b-d) follows
the same trends as the theoretical value of the structure
factor, see Fig. 2. This proves that the size of the di-
aphragms allows the system to work in the Born approx-
imation.
V. CONCLUSIONS
By capturing a configuration of multiple scatterers in
the direct space and Fourier transforming it to the recip-
rocal space, the structure factor has been used to design
configurations of multiple scatterers with prescribed scat-
tering characteristics in the Born approximation. The
methodology proposed in this work allows us to engi-
neer different kinds of materials: hyperuniform, steath,
equiluminous and super-ideal materials. We have paid
attention to the case of stealth materials, made from a
configuration of multiple scatterers which structure fac-
tor is exactly zero for a target set of wavelengths. There is
a main property of such materials: the broadband trans-
parency in the target range of frequencies. The physical
7
system used to check the theoretical predictions consists
of an air-filled 1D waveguide with diaphragms. The po-
sitions of the centers of the diaphragms, which are small
enough to fulfill the Born approximation, correspond to
a stealth point distribution to avoid Bragg scattering
and to achieve broadband transparency around this fre-
quency. The system is analyzed analytically, numerically
and experimentally along the two incidence directions
showing very good agreement and reproducing the pre-
scribed scattering properties of the system. Moreover
and interestingly enough, we have proven that the opti-
mization procedure is robust enough to be independent
of the presence of losses. The optimization is also very
robust to the finite size effects, showing that the property
S( (cid:126)G) = S(− (cid:126)G) is fulfilled with differences less than 3%
between the reflection coefficients evaluated from each
side of the structure in the whole range of frequencies.
These preliminary results could be the basis for future
applications in acoustics and more generally in wave
physics. It is worth noting here that the methodology is
general and can be applied for any type of wave. Exten-
sion to higher dimensions could provide very promising
applications for the broadband control of waves.
ACKNOWLEDGMENTS
This work has been funded by RFI Le Mans Acous-
tique (Région Pays de la Loire) in the framework of
the APAMAS project, by the project HYPERMETA
funded under the program Étoiles Montantes of the
Région Pays de la Loire as well as by the Ministerio
de Economía y Competitividad (Spain) and European
Union FEDER through project FIS2015-65998-C2-2-P.
V. Romero-García and L. M. García-Raffi acknowledge
the short term scientific mission (STSM) funded by the
COST (European Cooperation in Science and Technol-
ogy) Action DENORMS - CA15125.
2006).
∗ [email protected]
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|
1708.03153 | 1 | 1708 | 2017-08-10T10:24:08 | A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance and Stability in Planar Perovskite Solar Cells | [
"physics.app-ph"
] | Among the n-type metal oxide materials used in the planar perovskite solar cells, zinc oxide (ZnO) is a promising candidate to replace titanium dioxide (TiO2) due to its relatively high electron mobility, high transparency, and versatile nanostructures. Here, we present the application of low temperature solution processed ZnO/Al-doped ZnO (AZO) bilayer thin film as electron transport layers (ETLs) in the inverted perovskite solar cells, which provide a stair-case band profile. Experimental results revealed that the power conversion efficiency (PCE) of perovskite solar cells were significantly increased from 12.25 to 16.07% by employing the AZO thin film as the buffer layer. Meanwhile, the short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) were improved to 20.58 mA/cm2, 1.09V, and 71.6%, respectively. The enhancement in performance is attributed to the modified interface in ETL with stair-case band alignment of ZnO/AZO/CH3NH3PbI3, which allows more efficient extraction of photogenerated electrons in the CH3NH3PbI3 active layer. Thus, it is demonstrated that the ZnO/AZO bilayer ETLs would benefit the electron extraction and contribute in enhancing the performance of perovskite solar cells. | physics.app-ph | physics |
A Design Based on Stair-case Band
Alignment of Electron Transport Layer for
Improving Performance and Stability in Planar
Perovskite Solar Cells†
Shang-Hsuan Wu,‡ Ming-Yi Lin,¶ Sheng-Hao Chang,¶ Wei-Chen Tu,¶ Chih-Wei
Chu,∗,‡,§ and Yia-Chung Chang∗,‡
‡Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
¶Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 32023,
§College of Engineering, Chang Gung University, Taoyuan 33302, Taiwan
Taiwan
E-mail: [email protected]; [email protected]
Abstract
Among the n-type metal oxide materials used in the planar perovskite solar cells,
zinc oxide (ZnO) is a promising candidate to replace titanium dioxide (TiO2) due to its
relatively high electron mobility, high transparency, and versatile nanostructures. Here,
we present the application of low temperature solution processed ZnO/Al-doped ZnO
(AZO) bilayer thin film as electron transport layers (ETLs) in the inverted perovskite
solar cells, which provide a stair-case band profile. Experimental results revealed that
†A Design Based on Stair-case Band Alignment of Electron Transport Layer for Improving Performance
and Stability in Planar Perovskite Solar Cells
1
the power conversion efficiency (PCE) of perovskite solar cells were significantly in-
creased from 12.25 to 16.07% by employing the AZO thin film as the buffer layer.
Meanwhile, the short-circuit current density (Jsc), open-circuit voltage (Voc), and fill
factor (FF) were improved to 20.58 mA/cm2, 1.09V, and 71.6%, respectively. The
enhancement in performance is attributed to the modified interface in ETL with stair-
case band alignment of ZnO/AZO/CH3NH3PbI3, which allows more efficient extraction
of photogenerated electrons in the CH3NH3PbI3 active layer. Thus, it is demonstrated
that the ZnO/AZO bilayer ETLs would benefit the electron extraction and contribute
in enhancing the performance of perovskite solar cells.
Introduction
Organometal halide perovskite solar cells (e.g., CH3NH3PbX3, X = Cl, Br, I) have drawn
much attention in current renewable solar research owing to their excellent optical and elec-
tronic properties, including strong absorption band that span the visible region,1 direct
band gap (∼ 1.5 eV),2 long carrier diffusion length (100 – 1000 nm),3 high charge-carrier
mobility (∼10 cm2V−1s−1),4 and significantly low-cost fabrication process.5,6 These supe-
rior optoelectronic properties enable an increase in power conversion efficiencies (PCEs)
of planar heterojunction (PHJ) perovskite devices from 3.8% in 20097 to 22.1% in 2016.8
Due to the potential of organometal halide perovskites, there have been a great number of
studies regarding the carrier dynamics of perovskites,9 development of new materials10,11 ,
optimization of perovskite absorber layer thickness, crystallinity and surface coverage,12–14
and low-temperature processing15,16 over the past few years. The state-of-art perovskite
solar cells are based on two different device architectures: mesoporous17 and planar hetero-
junctions.18–20 For the n-type metal oxide materials in the cell, titanium dioxide (TiO2) is
commonly employed in the mesoporous scaffold. Although TiO2-based perovskite solar cells
may pave the way to high PCE devices, several disadvantages of TiO2 were reported such as
low electron mobility and high annealing temperature (above 450◦C) in order to form crys-
2
talline TiO2 film in anatase phase.21 Accordingly, among other n-type metal oxide materials
used in inverted solar cells, zinc oxide (ZnO) has been extensively studied as a substitute to
TiO2 due to its similar electron affinity, relatively high electron mobility, high transparency,
and versatile nanostructures.22,23
For high performance inverted perovskite solar cell, the selection of the electron collection
layer with hole blocking capability and low resistivity pathway for efficient electron extraction
is necessary. ZnO have been demonstrated to be an effective electron collection material due
to its various nanostructures that can be easily achieved by solution process for more efficient
charge extraction and transport.24,25 Recently, several studies of mesostructured perovskite
solar cell based on ZnO nanorod arrays have been used to replace the mesoporous TiO2
nanostructures in the conventional perovskite solar cells.26,27 For instance, Mahmood et al.
have obtained remarkably PCE of 16.1% in ZnO mesoscopic perovskite solar cells based on
synergistically combining mesoscale control with nitrogen doping and surface modification
of ZnO nanorod arrays.28 However, it was found that severe decomposition of CH3NH3PbI3
could occur at the ZnO/perovskite interface due to excessive OH− groups and chemical resid-
uals on the ZnO surface.29 To overcome the unstable decomposition process of CH3NH3PbI3
to PbI2 which tends to occur at the ZnO/perovskite interface, several approaches have been
developed to solve decomposition issue: (i) high temperature annealing of ZnO layer,30 (ii)
employing polymer interlayers between ZnO/perovskite to avoid the direct interaction,31,32
and (iii) the use of aluminum (Al) as a dopant in ZnO to passivate the OH− group.33,34 Pre-
viously, Tseng et al. have achieved a PCE of 17.6%, which was considered to be the highest
for ZnO-based perovskite solar cell by using the sputtered Al-doped ZnO (AZO) thin film
as electron transport layer (ETL).34 In the above research, it is worth noting that the use of
AZO as ETL could synergistically produce higher efficiency and stability for perovskite solar
cells. However, to fabricate better thin film quality of AZO ETLs with high conductivity
and crystallinity, preparation by physical vapor deposition (PVD) system with the use of
vacuum chamber is required which could lead to an increase in production cost and hinder
3
the scale-up technologies in roll-to-roll fabrication of large area solar cells. Therefore, the
development of solution-processed AZO ETLs by sol-gel technique is desired for it presents
several advantages, including facile synthesis, solution-based growth, long-term stability, and
low temperature processability that are suitable for flexible photovoltaics.
Inspired by these concepts based on effective electron extraction offered by ZnO ETL35
and great passivation ability of AZO,34 we adopted a synergistic strategy of using low-
temperature solution-processed ZnO/AZO bilayer as an ETL which can offer better electron
extraction and transportation due to the stair-case band alignment in the ZnO/AZO/perovskite
interface. In addition, the ZnO/AZO bilayer configuration can improve the interfacial con-
tact to active layer of perovskite and suppress the charge recombination, ultimately resulting
in enhancement in PCE, Jsc, and Voc of the device. Detailed investigations on the prominent
effect of ZnO/AZO bilayer as an ETL for the inverted PHJ perovskite solar cells were pre-
sented. The Voc and Jsc values of the devices containing ZnO/AZO bilayer were enhanced
compared to those of devices containing only ZnO. Moreover, the transport properties of
the ZnO and interfacial AZO layer were systematically investigated by using ultraviolet pho-
toelectron spectroscopy (UPS) and absorption measurements. Better charge transfer was
found between ZnO/AZO bilayer and perovskite which leads to higher Voc and Jsc in the
device. A maximum PCE of 16.07% was obtained for inverted planar perovskite solar cells
comprising ZnO/AZO bilayer ETL that is 24% higher than those containing only ZnO ETL.
Experimental
Syntheses of materials
Methylammonium iodide (MAI) preparation aqueous HI (57 wt% in water), methylamine
(CH3NH2, 40 wt% in aqueous solution), PbI2 (99.998%), dimethyl sulfoxide (DMSO), and di-
ethyl ether were purchased from Alfa Aesar and used without further purification. CH3NH3I
was synthesized by the method described in literature.20 Briefly, CH3NH3I was synthesized by
4
reacting aqueous HI with CH3NH2 at 0◦C for 2 h in three-neck flask under a N2 atmosphere
with constant stirring. A white precipitate (CH3NH3I) formed during rotary evaporation
of the solvent. The precipitated white powder was collected, washed three times with di-
ethyl ether, and then dried under vacuum at 60◦C overnight. This dried CH3NH3I white
powder was eventually stored in a glove box for further fabrication. For the ZnO sol-gel
solution which was synthesized according to a modified procedure reported in literatures.36
Typically, zinc acetate dihydrate, aluminum chloride hexahydrate, 2-methoxethanol, and
monoethanolamine (MEA) were used as the starting materials, solvent, and stabilizer, re-
spectively. Zinc acetate dihydrate were first dissolved in a mixture of 2-methoxethanol. The
molar ratio of MEA to zinc acetate dihydrate was maintained at 1.0 and the concentration of
zinc acetate was 0.5 M. In order to prepare Al-doped ZnO sol-gel solutions, the concentration
of Al as a dopant were varied at different concentration (1, 3 and 5 %) with respect to Zn
and the concentration of zinc acetate was 0.25 M. When the mixture was stirred, MEA was
added drop by drop. Then, the resulting mixture was vigorously stirred in a cone-shaped
glass beaker and settled in the water bath at 80◦C for three hours. Finally, the sol-gel
solution was aged for one day to obtain a clear and transparent homogeneous solution.
Device fabrication and characterization
Substrates of the cells are fluorine-doped tin oxide (FTO) conducting glass (Ruilong; thick-
ness 2.2 mm, sheet resistance 14 Ω/square). Before use, the FTO glass was first washed
with mild detergent, rinsed with distilled water several times and subsequently with ethanol
in an ultrasonic bath, finally dried under air stream. The ZnO/AZO bilayer thin films were
sequentially deposited on the FTO glass substrate via spin coating method. The coating
solution was dropped onto the FTO substrate which was rotated at 3000 rpm for 30s, fol-
lowed by thermal annealing at 200◦C for 30 min on a hot plate to evaporate the solvent and
remove organic residuals. Next, the substrates were transferred to a glove box for further
deposition of the perovskite active layer through the two-step spin-coating method. PbI2 (48
5
wt%)+KCl (1 wt%) additive were dissolved in 1ml dimethyl sulfoxide; CH3NH3I (4.25 wt%)
was dissolved in 1 ml 2-propanol solvent. Both solutions were kept on a hot plate at 70◦C
overnight. A hot PbI2 solution was spin-coated onto ZnO thin film and annealed directly
(70◦C, 10 min). The hot CH3NH3I solution was then spin-coated onto the PbI2 film; the
structure was kept on the hot plate at 100◦C for 5 min to form a crystalline perovskite film.
The hole-transporting spiro-OMeTAD material (5 wt%), 28.5 µl 4-tert-butylpyridine (tBP)
solution, 17.5 µl lithium bis(trifluoromethyl-sul-phonyl)imide solution (520 mg in 1 ml ace-
tonitrile) all dissolved in 1 ml chlorobenzene (CB) was further spin-coated on top. Finally,
the device was completed through sequential thermal evaporation of MoO3 (8 nm) and a
silver electrode (80 nm) through a shadow mask under vacuum (pressure: 1×10−6 torr). The
active area of each device was 10 mm2. Ultraviolet photoelectron spectroscopy (UPS) was
performed by using a PHI 5000 Versa Probe apparatus equipped with an Al Kα X-ray source
(1486.6 eV) and He (I) (21.22 eV) as monochromatic light sources. Absorption spectra of
the films were measured with the use of a Jacobs V-670 UV-Vis spectrophotometer. The
morphology of ZnO, ZnO/AZO bilayer and perovskite thin films were investigated by field-
emission scanning electron microscope (FEI Nova 200, 10 kV). Crytallographic information
was obtained by using X-ray diffraction (XRD) on a Bruker D8 X-ray diffractometer (2θ
range: 10 – 60◦; step size: 0.008◦) equipped with a diffracted beam monochromator set for
Cu Kα radiation (λ= 1.54056 Å). The photocurrent density-voltage (J-V) characteristics of
the cells were illuminated inside a glove box by a Xe lamp as a solar simulator (Thermal Oriel
1000 W), which provided a simulated AM 1.5 spectrum (100 mWcm−2). The light intensity
was calibrated by using a mono-silicon photodiode with a KG-5 color filter (Hamamatsu).
External quantum efficiency (EQE) spectra were measured under monochromatic illumina-
tion (Enlitech, QE-R3011). Devices were encapsulated before they were removed for EQE
measurement. The micro-photoluminescence spectra (µ-PL, Horiba Jobin Yvon HR-800)
of the ZnO, ZnO/AZO bilayer and perovskite thin films were obtained by using a 325 nm
He-Cd CW laser as the excitation source with a 2400 grooves/mm grating in the backscatter-
6
ing geometry. Time-resolved PL measurements were carried out by a time-correlated single
photon counting (TCSPC) system and samples were photoexcited by using a 405 nm pulse
laser source. All of the measurements were carried out at room temperature (RT).
Results and discussion
Figure 1(a) illustrates the device architecture of PHJ perovskite solar cells with ZnO/AZO
bilayer used in this study. The device structure is FTO/ZnO/AZO/CH3NH3PbI3/Spiro-
OMeTAD/MoO3/Ag, where the ZnO/AZO bilayer was deposited onto the FTO electrode
as ETL. To efficiently extract electrons from CH3NH3PbI3 active layer, a 10-nm thick sol-
gel processed AZO layer was grown at the ZnO/perovskite interface. Since AZO has a
higher conduction band compared to that of ZnO, with high electron density and faster
electron mobility, the ZnO/perovskite recombination would be restrained. The corresponding
cross sectional image of FTO/ZnO/AZO/perovskite device was shown in Fig. 1(b). The
ZnO/AZO thin layer was deposited on the FTO substrate by spin-coating method. Then,
the CH3NH3PbI3 or perovskite active layer was deposited onto the ZnO/AZO bilayer using
two-step spin-coating method. A uniform distribution of perovskite film was formed on
the top of the ZnO/AZO bilayer. The PHJ perovskite devices were finally fabricated using
spiro-OMeTAD as a hole transporting layer (HTL), MoO3 and silver as top electrode. The
thicknesses of ZnO and AZO layers were varied to optimize the peformance of solar cells (See
supporting information, Figure S1). The best thicknesses of ZnO and AZO layers found are
∼30 nm and ∼10 nm, respectively.
To investigate the electronic structures of ZnO/AZO bilayer and evaluate the effect of
the AZO interfacial modification, UPS and absorption measurements were performed to the
ZnO and AZO thin films. Energy-level diagrams of other Al-doping concentrations (3% and
5%) can be found in Figure S2. Fig. 2(a) presents the UPS spectra of the ZnO and AZO
thin films. The low binding energy tail (Eonset) of UPS spectra for ZnO and AZO samples
7
(a) Device architecture of
Figure 1:
the FTO/ZnO/AZO/CH3NH3PbI3/ Spiro-
OMeTAD/MoO3/Ag used in the study. (b) The corresponding cross-sectional SEM image
of FTO/ZnO/AZO/perovskite device.
are shown in Fig. 2(a). The VBM energy levels (relative to vacuum level) are calculated by
using eq. 1.37
− V BM = hν − (Ecutof f − Eonset)
(1)
where hν = 21.22 eV is the incident photon energy and the high binding energy cut off
(Ecutof f) spectra of ZnO and AZO obtained from Fig. 2 (a) are 17.06 and 17.10 eV, respec-
tively. The corresponding VBM energy levels of ZnO and AZO are -7.18 and -7.20 eV. In
order to determine the positions of conduction band minimum (CBM) of ZnO and AZO, the
optical bandgap energies are required. The optical bandgap energies (Eg) of ZnO and AZO
were estimated using eq. 2.38
(αhν)n = A(hν − Eg)
(2)
where n = 1/2 for indirect transition, n = 2 for direct transition; A is proportional constant,
α is the absorption coefficient, h is Planck's constant, ν is frequency of incident photon.
8
FTO glass ZnO/AZO bilayer 𝐂𝐇𝟑𝐍𝐇𝟑𝐏𝐛𝐈𝟑 400 nm + - (a) (b) Figure 2: (a) UPS spectra for ZnO layer (red curve) and ZnO/AZO bilayer (blue curve).
Left: onset region, Middle: the whole UPS photoemission spectra. Right: cut off region. (b)
Energy-level diagram of the ZnO/AZO bilayer-perovskite device.
Here the Eg was determined by using (αhν)2 = A(hν − Eg) since ZnO and AZO are both
direct transition in nature. As shown in Figure S3, the corresponding optical bandgap of
ZnO and AZO are 3.28 and 3.40 eV which were obtained by extrapolating the linear region
of the curves near the onset of the absorption edge to the energy axis. From the positions of
VBM and optical bandgap obtained from the absorption spectra, the estimated conduction
band minimum (CBM) positions with respect to vacuum level (at 0 eV) are -3.90 and -3.80
eV for ZnO and AZO, respectively. In general, the optical bandgap broadening of AZO can
be addressed to the increase in the carrier concentration which blocks the lowest states in
the conduction band based on the Burstein-Moss effect.39 The corresponding energy level
diagram is illustrated in Fig. 2(b). The Fermi level values of each layer were aligned due
to thermodynamic equilibrium that arises when they are combined. It was revealed that
9
Binding energy (eV) Intensity (a.u.) -3.6 -5.2 FTO -2.1 -4.4 ZnO -7.18 -3.90 -4.6 Spiro-OMeTAD Ag -5.1 -5.6 -3.80 -7.20 𝐂𝐂𝟑𝐍𝐂𝟑𝐏𝐏𝐏𝟑 h+ 𝑒− Energy level (eV) (a) (b) MoO3 AZO the conduction band minimum (CBM) of AZO is slightly higher than that of ZnO (∆EV =
0.1 eV), thus indicating that this ZnO/AZO bilayer band alignment could benefit electron
extraction from CH3NH3PbI3 active layer, suppress charge accumulation in the ZnO layer,
and restrain the charge recombination at ZnO/perovskite interface. These results suggest
that the sequencing of ZnO/AZO bilayer structure is influential in tuning the energy level
alignment and increase in voltage output of the device.
Figure 3: Schematic diagrams of field-effect-induced band bending in the heterojunctions of
(a) ZnO/CH3NH3PbI3 and (b) ZnO/AZO/ CH3NH3PbI3 without illumination (solid blue
line) and with illumination (dashed green line). "++++" in AZO region indicates the
positive charges left after the depletion of free electrons.
The comparison of band profiles (including the band-bending effect due to doping and
charge transfer) of ZnO/CH3NH3PbI3 and ZnO/AZO/CH3NH3PbI3 interfaces with (green
dashed lines) and without (blue solid lines) the effect of electron-hole interaction after photo-
excitation are shown in Fig. 3. Since the Fermi level (with respect to vacuum) in FTO
(n-contact) is 0.2 eV higher than that of Ag (p-contact), electrons must be transferred from
the n side to p side in order to make their Fermi levels aligned when FTO and Ag are brought
into contact in the solar cell device, leaving surface charges near the ohmic contacts at both
ends. This leads to a nearly constant electric field in the active region. Most of the voltage
10
(a)(b)+++----CBMrecombinationno illuminationCBMEFVBMZnO𝐂𝐇𝟑𝐍𝐇𝟑𝐏𝐛𝐈𝟑under illumination----VBM-CBM𝐂𝐇𝟑𝐍𝐇𝟑𝐏𝐛𝐈𝟑AZOCBMEFZnO+++no illumination-++++no recombination----under illumination----- drop should appear in the perovskite region, since it is intrinsic. The qualitative behavior of
band bending depicted in Fig. 3 has taken into account the built-in voltage and the solution
to the Poisson equation.
∂2V (z)/∂z2 = 4πe2[Nd(z) − n(z)]/ε(z)
(3)
where V (z), n(z), Nd(z), and /ε(z) denote the electrostatic potential energy, electron
carrier density, dopant concentration, and dielectric constant at position z, respectively. In
Fig. 3(a), the band profile of ZnO has a weak band bending, since the built-in electric field
is partially screened by the free carriers in ZnO, which is slightly n-type. An extra electron
trapping potential can be created (as indicated by the dotted line) by the electron-hole
attraction after photo-excitation. These trapped electrons in the triangular well can hinder
the charge separation process and part of them will recombine with holes in CH3NH3PbI3.
In Fig. 3(b), a thin AZO layer (which has higher free electron density than ZnO due to Al
doping) is inserted between ZnO and CH3NH3PbI3. Since the conduction band minimum
(CBM) of AZO is higher than the CBM of ZnO, free electrons must be transferred from AZO
layer to the ZnO/FTO interface region, leaving a depleted AZO region with net positive
charges of dopants, which are assumed to be uniformly distributed. Consequently, there is
a strong band bending in the AZO region after adding the self-consistent potential which
satisfies the Poisson equation [Eq. (3)], as seen in Fig. 3(b). The curvature of the band
bending is proportional to the dopant concentration due to Eq. (3). After photo-excitation,
the attractive electron-hole interaction will reduce the band bending, but not enough to form
a trapping potential at the AZO/perovskite interface. Thus, the charge separation process
in ZnO/AZO/perovskite interface can be enhanced in comparison to the ZnO/perovskite
interface.
The surface morphologies of the pure ZnO ETL, the ZnO/AZO bilayer ETL, and the
active layer of CH3NH3PbI3, respectively, are shown in Fig. 4. As observed in Fig. 4(a), the
morphology of ZnO monolayer on FTO substrate shows a clear sol-gel processed granular
11
Figure 4: SEM top-view images of (a) ZnO (inset is the bare FTO substrate); the areas of
visible cracks were indicated by yellow boxes, (b) ZnO/AZO, (c) perovskite film grown on
the ZnO and (d) perovskite film grown on ZnO/AZO.
feature. However, several cracks (indicated by yellow boxes) can be found in the ZnO layer
which correlate with the FTO grain boundaries. These cracks could lead to direct contact
between FTO and perovskite, causing serious charge recombination. On the other hand,
with the AZO thin film modification the ZnO/AZO bilayer [Fig. 4(b)] forms a smooth and
homogenous ETL surface without visible cracks. Figure 4(c-d) show top-view SEM images
of perovskite films deposited on ZnO and ZnO/AZO bilayer thin films. The less-compact
perovskite morphology observed in the film grown on ZnO [Fig. 4(c)] may result in poorer
connectivity between adjacent crystallites, leading to a more tortuous pathway for carrier
transport and a greater likelihood of charge recombination.40 In contrast, the uniform and
densely-packed perovskite film [Fig. 4(d)] with grain sizes at approximately ∼ 150–450 nm
was formed on top of the ZnO/AZO bilayer film.
The XRD patterns of FTO/ZnO/AZO/perovskite, FTO/ZnO/perovskite, and FTO/ZnO/
12
(a) (b) (c) (d) cracks Figure 5: XRD patterns of FTO/ZnO/AZO/perovskite, FTO/ZnO/perovskite, and
FTO/ZnO/AZO.
AZO are displayed in Fig. 5. The sol-gel-processed ZnO/AZO bilayer film shows an amor-
phous structure with no crystallinity (2θ in the range of 10 to 60 degrees) which is consistent
with results in the literature36 for low-temperature-processed ZnO ETLs. The diffraction
pattern of CH3NH3PbI3 film reveals peaks associated with the (002), (211), (202), (004),
(310), (312), (224), (314) and (404) planes, respectively, confirming the formation of a tetra-
hedral perovskite crystal structure. The peak positions indicate that a pure perovskite phase
was obtained; no secondary phases arising from incomplete formation of perovskite appeared
(e.g., PbI2 or CH3NH3I).
The J-V characteristics and EQE (External Quantum Efficiency) spectra of the cells
based on ZnO and ZnO/AZO bilayer ETLs are shown in Figs. 6(a) and 6(b). The pho-
tovoltaic parameters of devices with best performance are summarized in Table 1. The
device employing ZnO/AZO bilayer ETLs shows significant enhancement in photovoltaic
parameters with respect to that of ZnO monolayer ETL. The comparison of AZO ETLs
with different Al-doping concentrations (1, 3, 5%) is shown in Fig. S4. The device with
13
Figure 6: (a) J-V characteristics of perovskite solar cells incorporating ZnO and ZnO/AZO
as ETLs measured under AM 1.5 G illumination (100 mW cm−2. (b) EQE spectra of the
corresponding cells. (c) Absorption and steady-state PL spectra of perovskite films. (d)
Time-resolved PL spectra of perovskite films comprising with ZnO and ZnO/AZO ETLs.
ZnO/AZO bilayer presents distinct improvement in Jsc (from 18.20 to 20.58 mA·cm−2) and
Voc (from 1.04 to 1.09 V), resulting in the best PCE (from 12.25 to 16.07%). Notably, the
fill-factor (FF) value was also largely improved from 64.7 to 71.6% by adding AZO as the
buffer layer. Based on the slope (dJ/dV )−1 of the corresponding J-V curves at Jsc, we ob-
tained a low shunt resistance (RSH) of 394 Ω·cm2 for the ZnO monolayer film and a high
RSH of 21153 Ω·cm2 for the ZnO/AZO film. This translates to a significant improvement
in FF. The increased Jsc in ZnO/AZO bilayer is supported by the enhancement in EQE
[see Fig. 6(b)]. It is found that the PHJ perovskite device comprising of ZnO/AZO bilayer
ETLs exhibits a higher spectral response with a maxima EQE of 83.7% in contrast to a
lower EQE of 80.9% for the device comprising of ZnO ETL. Moreover, the increased EQE
14
(a)(c)(d)(b)ETLτ1 (ns)τ2 (ns)ZnO2.1413.83ZnO/AZO1.526.23 Table 1: Photovoltaic performance parameters of the best performing devices prepared with
only ZnO layer and with ZnO/AZO bilayer as ETLs
Cathode
(mA·cm−2)
(mA·cm−2)
J b
sc
Voc
(V )
1.04
1.09
J a
sc
18.20
20.58
FTO/ZnO
394
21153
FTO/ZnO/AZO
a Measured Jsc values from the AM 1.5 G solar simulator. b Integrated Jsc values from the
EQE measurement. c The histograms for photovoltaic parameters of 50 cells are illustrated
17.62
19.55
FF
(%)
64.7
71.6
PCE
(%)
12.25
16.07
RSH
(Ω·cm2)
in Fig. S5.
of the device based on ZnO/AZO bilayer ETLs is due to the higher light absorption within
the range from 300 to 400 nm [See Fig. 6(c)] and the better charge collection efficiency.
The discrepancy (∼ 5%) between the integrated Jsc from EQE and Jsc obtained from the
J-V curve is generally observed in the perovskite cell due to the difference in measurement
methods. In order to investigate the origin of enhanced Jsc, PL measurements were carried
out to study the capability for the electron transfer from perovskite to ETLs. As shown in
Fig. 6(c), the strong PL quenching occurred in perovskite thin film grown on ZnO/AZO
bilayer ETL compared to that grown on ZnO ETL indicates high electron transfer efficiency
and exciton dissociation of the ZnO/AZO bilayer ETL configuration. Therefore, the higher
PL quenching in the perovskite film based on ZnO/AZO bilayer suggests the faster deacti-
vation of the excited state by the efficient charge transfer between perovskite and ZnO/AZO
bilayer and thus giving rise to enhanced Jsc. To further confirm the faster electron transport
properties in ZnO/AZO bilayer ETL, the time-resolved PL measurements were conducted
with results summarized in Fig. 6(d). The PL lifetime was fitted with a biexponential decay
function of the form, I(t) = A1exp(−t/τ1) + A2exp(−t/τ2), where I(t) is the the intensity
at time t after the excitation pulse. By fitting a biexponential function to the fluorescence
decay, the lifetime components τ1 and τ2, as well as the amplitudes A1 and A2, can be re-
covered. The resulting decay lifetimes are listed in the insert of Fig. 6 (d). The fast decay
(τ1) process was considered to be the result of the free carriers in the perovskite through
transport to ETL or HTL, whereas the slow decay (τ2) process to be the result of radia-
15
tive decay.33 The τ1 of ZnO/AZO/perovskite/spiro-OMeTAD sample decreased to 1.52 ns,
which was much smaller than that of the ZnO/perovskite/spiro-OMeTAD (2.14 ns). This
indicated that charger transfer between perovskite and ZnO/AZO bilayer is faster than that
without AZO interlayer. The results of PL quenching and lifetime are consistent with the
more efficient charge separation due to the stair-case band alignment of our device structure
with ZnO/AZO bilayer ETL. It is thus evident that the electrical properties are strongly
influenced by employing AZO as the interlayer.
Electrochemical impedance measurements were carried out for perovskite solar cells con-
taining ZnO and ZnO/AZO as ETLs to investigate its charge carrier transport properties
systematically. Fig. 7 shows Nyquist plots (imaginary versus real part of the impedance) of
perovskite solar cells containing ZnO and ZnO/AZO as ETLs under 1 sun illumination at
applied bias voltage of V = 1V . The impedance spectra consist of high frequency (low Z')
and low frequency (high Z') features. In most cases, these features were represented by an
arc or semicircle depending on the sample and the applied voltage. In the perovskite solar
cell containing only ZnO as ETL, a high resistance represented by a large arc was observed.
Higher resistance could be attributed from the presence of cracks [see SEM image in Fig.
3(a)] that allowed direct contact between FTO and perovskite, causing deleterious charge
recombination that could yield to poor device performance. In contrast, for the perovskite
solar cells containing ZnO/AZO as ETLs, the addition of AZO decreased the resistance (cor-
responding to smaller arc in Fig. 7) thus indicating a smoother carrier movement that leads
to less recombination and better device performance.
Figure 8 (a) shows the thermal stability test of perovskite films deposited on ZnO and
ZnO/AZO ETLs (heating at 100◦C). We found that the CH3NH3PbI3 film deposited on AZO
interlayer shows better thermal stability than that deposited on ZnO ETL. The instability
of CH3NH3PbI3 film deposited on ZnO ETL was mainly due to the reaction of CH3NH3
proton in the perovskite layer with the surface hydroxyl groups and residual acetate ligands
+
of sol-gel processed ZnO.30 Previous reports on the thermal stability test of perovskite solar
16
Figure 7: Nyquist plots of perovskite solar cells containing ZnO and ZnO/AZO ETLs under
1 sun illumination with applied bias voltage of 1 V.
cells with only ZnO ETL confirmed their severe instability against annealing time. Thus,
the addition of AZO interlayer improves its thermal stability, which can be ascribed to the
decrease in Lewis acid-base chemical reaction between the perovskite and ZnO since the basic
property of ZnO has been weakened by doping of aluminum.33,34 Moreover, we compared the
durability of the unencapsulated perovskite solar cells containing pure ZnO ETLs with those
containing ZnO/AZO ETLs in Fig. 8 (b). (All testing devices were stored inside a glove box
with 30 ppm oxygen and 0.1 ppm water for 45 days, and their performance was constantly
monitored). The device containing ZnO/AZO as ETL exhibits long-term stability with only
9% degradation of its initial PCE after being kept in the dark for over 45 days. In contrast,
the stability of the device prepared with the ZnO as ETL shows deterioration in performance
after 12 days of storage with 53% degradation of its initial PCE. The significant degradation
probably arises from the ZnO/perovskite interface (excluding the oxidation effect of spiro-
OMeTAD and silver electrodes). To further understand the origin of the decomposition of
perovskite layers on different interfaces, XPS measurement was carried out to analyze the
O 1s core level spectra for both ZnO and AZO samples (as shown in Figure S6). The lower
17
Figure 8: (a) Thermal stability test (with heating at 100◦C) and (b) normalized PCE as a
function of time (in days) for perovskite solar cells containing ZnO and ZnO/AZO ETLs.
binding energy of OZn−O peak (531.08 eV) that is attributed to O atoms in the wurtzite
structure of ZnO25 for AZO thin film shifts toward lower energy by 0.11 eV in comparison
with ZnO thin film. Moreover, the intensity of OZn−O peak in AZO thin film is lower than
ZnO thin film which can be explained by the Al-doping.33 The higher binding energy of
second peak (532.97 eV) corresponds to the OH− or O−
2 ions in the AZO shifts toward
higher binding energy and has lower intensity than in ZnO thin film. The above result
indicates that AZO thin film is more oxygen deficient. Thereby the OH− group passivation
enhances the thermal stability and durability of perovskite solar cells containing ZnO/AZO
ETL.
18
(a) (b) Conclusion
In summary, we have successfully demonstrated how the low temperature solution processed
ZnO/AZO bilayer ETL improves the efficiency of PHJ perovskite solar cell. In this study,
the PCE obtained can exceed 16%. The introduction of AZO layer not only helps the
formation of uniform surface morphology to fill the defects but also lead to a stair-case band
alignment in the ZnO/AZO/perovskite heterostruucture, which is shown to yield better
electron extraction, thereby significantly enhance the device performance. It is noteworthy
that the results obtained for our optimized device surpass the state-of-the-art PCE and
Voc of solution processed ZnO-based perovskite solar cells. Moreover, the device prepared
with ZnO/AZO bilayer ETLs showed long-term stability; only 9% degradation of its initial
PCE after being kept in the dark for over 45 days. This approach pave a new way for the
development of low-cost perovskite solar cells.
Supporting Information Available
The following files are available free of charge.
J-V curves at different molar concentrations of ZnO and ZnO/AZO ETLs, Tauc plots
for optical bandgap extraction, UPS spectra of 3% AZO and 5% AZO films and correspond-
ing energy-level diagram, J-V curves at different concentrations of AZO interlayers, and
Histograms of device performance parameters.
Author Information
Corresponding Authors
*Emails: [email protected]; [email protected]
19
Author Contributions
The manuscript was written through contributions of all authors. All authors have given
approval to the final version of the manuscript.
Notes
The authors declare no competing financial interest.
Acknowledgement
This work was supported in part by the Ministry of Science and Technology of Taiwan
under Contract nos. MOST 104-2112-M-001-009-MY2 and 104-2221-E-001-014-MY3. Ad-
ditionally, C. W. Chu thanks the Career Development Award of Academia Sinica, Taiwan
(103-CDA-M01) for financial support.
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12.25%16.07% |
1810.00935 | 1 | 1810 | 2018-08-22T01:07:21 | Carboxyl Carbon Quantum Dots: a Novel Type of Environmental-Friendly Scale Inhibitor | [
"physics.app-ph"
] | In this work, we demonstrate high inhibition efficiency of carboxyl carbon quantum dots (CCQDs) for the first time. The as-prepared CCQDs have excellent scale inhibition performance for calcium sulfate and barium sulfate. With static test of scale inhibition within temperature below 80 degrees, the anti-scaling efficiency can reach 100 % with low additions of CCQDs. | physics.app-ph | physics | Carboxyl Carbon Quantum Dots: a Novel Type of
Environmental-Friendly Scale Inhibitor
Jian Hao, Lingyun Li, Weiwei Zhao, Xiaqian Wu, Yangyang Xiao, Hongfeng Zhang,
Na Tang* and Xiaocong Wang*
College of Chemical Engineering and Material Science, Tianjin University of Science and
Technology, Tianjin 300457, China
* Corresponding authors: [email protected] (N. Tang); [email protected] (X. Wang).
Abstract: Carbon quantum dots (CQDs) are promising nano-materials since it has
smaller particle size, excellent biocompatibility and low toxicity. However, no one has
found their high scale inhibition performance so far. In this paper, a new kind of green
scale inhibitor, carboxyl carbon quantum dots (CCQDs), were synthesized through a
simple method of thermal decomposition of citric acid. The as-prepared CCQDs have
excellent scale inhibition performance for CaSO4 and BaSO4. With static test of scale
inhibition at temperature of 0～80 ℃, the anti-scaling efficiency can reach 100%
with low additions of CCQDs.
Key words: Carbon dots; Scale inhibitor; Environment-friendliness; Nano materials
1. Introduction
Two of the greatest problems of the human society are those related to water
shortage and the environment deterioration. In recent years, the demand of water has
increased significantly with the development of industry and society, which
intensifies the shortage of water resources [1]. In order to make full use of water,
circulating utilization is considered as an effective way to alleviate the pressure on
water supply. However, during the operation, scale deposition in recirculation cooling
water system is one of the most serious problems. It is a general problem on heat
exchangers, cooling water systems, reverse osmosis membrane surface, boilers,
secondary oil recovery and utilizing water flooding
techniques, flue gas
desulphurization systems and desalination plants etc. [2-8]. Once scales have formed on
the surface of equipment, the heat transfer efficiency of the system will decline
dramatically, and it will greatly shorten the service lifetime of the apparatus [9]. To
avoid formation of scales, the most common and effective method is to add small
amount of scale inhibitors [3, 10].
At present, phosphorous compounds such as amino trimethylene phosphonic
acid (ATMP) and 2-phosphonobutane -1,2,4-tricarboxylic acid (PBTCA) have been
effectively used against scale formation in cooling water systems [11]. But their use is
limited because these compounds become nutrients in the eutrophication process,
which may lead to the massive development of biological species and has the
potential to deteriorate the environment [12].
In order to avoid the deterioration of ecological environment, development of
the phosphate-free and nitrogen-free scale inhibitors becomes the main focus of water
treatment technology [13]. The phosphorus-free polycarboxylate such as polyacrylic
acid (PAA), polymaleic acid (PMA) and polyepoxysuccinic acid (PESA) have
attracted great interests, both in industry and in academia. But they have low calcium
tolerance because of
their reaction with calcium
ions
to form
insoluble
calcium-polymer salts [14]. Therefore, exploitation of novel environment friendly scale
inhibitors is of vital importance.
On the other hand, carbon-based quantum dots (CQDs) are a newly developed
class of carbon nano-materials that have attracted much interest and attention owing
to their un-comparable and unique properties [15-17]. Carbon quantum dots are defined
as small carbon nanoparticles with outstanding features such as good conductivity,
high chemical stability, environmental friendliness, broadband optical absorption, low
toxicity, strong photoluminescence (PL) emission and optical properties [18]. Carbon
quantum dots components and structure determine their diverse characteristics. Most
of the carboxyl moieties on the surface of the CQD give a great solubility in water and
biocompatibility [19-22].
Since the raw material for preparing carbon dots is mostly carbon-containing
organic matter, its surface contains a large amount of reactive functional groups (such
as -OH, -COOH, etc.). These oxygen-containing functional groups are easily chelated
with the scale-forming ions, and the carbonic acid dots of citric acid have good
adsorption capacity, which can affect the crystallization process of the fouling
substances by lattice distortion. It is speculated that the carbon dots derived from
citric acid should have good scale inhibition and scale inhibition ability in industrial
cooling water.
So, in this paper, we present a simple method to synthesize carboxyl modified
carbon quantum dots (CCQDs) and use it as a novel type of green scale inhibitor for
the first time. The superior properties of this new kind of scale inhibitor have been
investigated. In comparison with traditional scale inhibitor, this new type of efficient
scale inhibitor has many advantages, such as easy preparation, free of phosphorus and
nitrogen, low-toxicity and biocompatibility. It is a real eco-friendly scale inhibitor and
will find many applications in oil pipelines, industrial boilers, water cooling systems
and desalination equipment etc.
2. Experimental
2.1 Materials
Citric acid, sodium hydroxide and anhydrous sodium sulfate were purchased
from Pharmaceutical Group Co., LTD.. Anhydrous calcium chloride was bought from
Tianjin Wind Boat Chemical Reagent Technology Co., LTD.. All chemicals are
analytical grade and used as received without further purification.
2.2 Synthesis of carbon quantum dots
In a typical synthesis procedure, 100 g of citric acid was added in a 250 ml
three-neck round-bottom flask and was heated at 180 ℃ for 30 h. It was melted to
form a colorless liquid, followed by degas. The color then changed from colorless to
yellow, orange, and brown. Upon cooling, an orange-brown high-viscosity liquid was
obtained, which was stirred with 100 ml of ultrapure water and a NaOH aqueous
solution (5 mol/L). Approximately 25 ml of NaOH aqueous solution was subsequently
added to neutralize the solution to a pH of 7, resulting in an orange-brown solution of
carboxylic acid groups modified CCQDs. Further purification was completed by
dialysis bag. The product was separated as a yellow-orange powder by freeze-drying,
and finally about 45 g of CCQDs were obtained from 100 g of initial materials.
2.3 Scale inhibition measurement
Scale inhibition efficiency was measured by national standard GB/T 16632-2008,
the static scale inhibition test method was adopted to measure the ability of scale
inhibition for CCQDs against CaSO4 precipitation. The mass concentrations of Ca2+
and SO4
2- were 6800 mg/L. The solution was heated to 40 ℃, 60 ℃ and 80 ℃ in a
water bath and kept for 10 h, respectively. After cooling the solution to room
temperature, EDTA standard solution was added to measure the Ca2+ ion remained in
the supernatant. The scale inhibition efficiency of CCQDs against CaSO4 was
calculated by a formula (as shown in formula (1)).
scale inhibition efficiency (%) =
𝑉2−𝑉1
V0−V1
× 100% (1)
where V0 (ml) is the consumed volume of EDTA solution for titration the water
sample neither addition of scale inhibitors nor NaSO4, while V1 and V2 (mL) are the
consumed volume of EDTA solution in the absence and in the presence of scale
inhibitors after 10 h incubation at specific temperature, respectively.
The scale effect of CCQDs against barium sulfate was examined according to the
national standard of People's Republic of China concerning the code for the design of
industrial oil field water treatment (Q/SY 126-2005).
2.4 Characterization
A JEOL JEM-2100 transmission electron microscope (TEM) was used to obtain
the morphology and the size of CCQDs. Ultraviolet -- visible (UV -- vis) spectra was
measured on a UV-2550PC spectrophotometer using ultrapure water as solvent.
Fluorescent signal of CCQDs was observed by an F-280A Fluoro-spectrophotometer.
The infrared spectra (IR) were recorded by an IS50 Fourier transform infrared
spectrometer using KBr disks. Functional groups on the surface of CCQDs were
measured by a K-Alpha X-ray photoelectron spectrometer. A 6100 X-ray powder
diffractometer and a SU1510 scanning electron microscope (SEM) were utilized to
investigate the mechanism of scale inhibition.
3. Results and discussion
With citric acid pyrolysis, the color gradually changed from colorless to brown.
The essence is that the C-H bonds in citric acid molecules are gradually oxidized to
carboxyl groups, and some C-C bonds break or recombine. So citric acid molecules
are continuously carbonized, and carboxyl groups on the surface are continuously
enriched to form carboxyl carbon quantum dots. Figure 1 shows TEM image of the
as-prepared CCQDs. The size is centered at 4-8 nm with a relatively broad size
distribution. Regions of both graphitic and amorphous carbon were found, the
graphitic regions demonstrate the lattice fringes corresponding to the interlayer
spacing is 3.6 Å. The TEM result was confirmed by X-ray powder diffraction. The
X-ray powder diffraction of CCQDs showed a broad feature centered at 2θ = 29.8°,
which attributed to the lattice spacing of 3.6 Å, similar to the (200) reflection
(d002=3.4 Å [23]) of disordered graphitic-like species (Figure 1, insert).
(a) (b)
Figure 1 (a) TEM images of CCQDs. The insert (up) is a high magnification image. The insert
(down) is the size distribution of CCQDs. (b) UV-visible absorption and steady-state
photoluminescence emission spectra of CCQDs in aqueous solution with varying excitation
wavelengths (λ= 280, 300, 320, 340, 360, 380, 400 and 420 nm).
The optical properties of
the CCQDs were explored by UV-vis and
photoluminescence (PL) spectroscopy (Figure 1b). A broad absorption in the UV
region with a tail in the near-visible region was presented in UV-vis spectra, which
was assigned to various π−π* (C=C) and n−π* (C=O) transitions. Maximum emission
peak was observed at λ=360 nm PL excitation wavelength. The
typical
excitation-wavelength-dependent behavior of PL emission was revealed. On shifting
the excitation wavelength from280 to 420 nm, the emission maximum was shifted
from 407 to 493 nm. The fluorescent effect under ultraviolet lamp is blue, which
related with the diameter of CCQDs. According to the fluorescent effect, it indicates
that the CCQDs acquired from different pyrolysis time are about the same size.
In order to confirm the surface groups and their contents on the surface of
carbon quantum dots, FTIR (Figure 2) and X-ray photoelectron spectroscopy (XPS)
(Figure 3) were performed. Significant differences in FTIR spectra of citric acid and
CCQDs are observed as shown in Figure 2. The bands at 3370 cm-1 and 3030 cm-1 are
attributed to the stretching vibration of O-H bond and C-H bond (Figure 2a) [24].
There is a broad peak at 3414 cm-1 assigned to the stretching vibration of O-H bond of
hydroxyl group. Two strong features at 1398 and 1568 cm−1 corresponding to the
symmetric and anti-symmetric stretches of the carboxylate group [25], consistent with
the presence of this group on the surface of the carbon dots (Figure 2b). By
comparing the spectra of CCQDs and citric acid, it could be concluded that no
residual of citric acid left in the CCQDs，the citric acid molecules had been
decomposed completely.
Figure 2 FTIR spectra of citric acid (a) and CCQDs (b).
High resolution O1s spectrogram of CCQDs is shown in Figure 3, the intensity
of O-H bond decreases with the increasing of pyrolytic time. When the pyrolytic time
was 30 h, the CCQDs contained more O-C=O bonds. Combination the results of FTIR
and XPS, a conclusion that there is abundant carboxylate groups on the surface of
CQDs acquired from high-temperature pyrolysis of citric acid could be drawn.
Figure 3 High resolution O1s spectrograms of CCQDs obtained by different pyrolysis time: (a) 10
h, (b) 20 h, (c) 30 h, (d) 40 h.
Scale-inhibition performances of the CCQDs obtained from different condition
were investigated by the static scale inhibition test. The scale-inhibition efficiencies of
the CCQDs from different pyrolytic temperature and time have been systemically
investigated. At temperature of 180 ℃, CCQDs obtained from pyrolytic time of 10 h,
20 h, 30 h and 40 h have been compared. With a result, CCQDs obtained from
pyrolytic time of 30 h have the best scale-inhibition efficiency (Figure 4a), so it was
selected to study the influence of other factors for scale inhibition.
Figure 4 The scale inhibition efficiency of CCQDs: (a) with different pyrolysis times; (b) at
different temperature, CaSO4; (c) at different temperature, BaSO4; (d) at different pH.
Heating temperature is an important influencing factor for the scale-inhibition
effect. Temperature of 40 ℃, 50 ℃, 60 ℃,70 ℃and 80 ℃have been investigated.
The results of calcium scales are shown in Figure 4b. It could be seen that the scale
inhibition efficiency increases with the increasing dosage of CCQDs. For CaSO4 scale,
when the dosage of CCQDs is 25 mg/L, the scale inhibition efficiency reaches over
95 % at 40 ℃. To achieve a same scale-inhibition effect, higher concentration of
CCQDs was needed at a higher temperature. The scale inhibition efficiency achieved
99 % at 80 ℃with a dosage of 200 mg/L. Nevertheless, at any temperature from 40 ℃
to 80 ℃, sufficient efficiency can near or reach 100%. That can fully meet the needs
in reverse osmosis membranes.
In addition to calcium scale, the barium sulfate scale is considered as one of the
most frequent and obstinate scales in off shore oil and gas production systems [26].
Because of the extremely low solubility, the barium sulfate scale removal is
particularly difficult. The influence of CCQDs to control the barium sulfate formation
is shown in Figure 4c. It can be seen that CCQDs has the inhibition efficiency of 90 %
at 16 mg/L at the temperature of 40 ℃. Different from calcium scales, the scale
inhibition efficiency of barium sulfate scales are less affected by temperature. When
the dosage of CCQDs is above 20 mg/L, at any temperature from 40℃to 80℃, the
scale inhibition rate reaches 100 %. The possible reason is that barium sulfate has
higher thermal stability and its solubility is less affected by temperature.
Figure 4d shows the influences of pH on the inhibition efficiency of CCQDs
against CaSO4 scales and BaSO4 scales. In this study, the dosage of CCQDs was 40
mg/L and 4 mg/L, respectively. With the increase of pH value, the scale inhibition
efficiency for CaSO4 and BaSO4 scales show a low inhibition effect at strong acid
conditions. Using 0.5 mol/L sodium hydroxide solution to adjust the solution to
alkaline, the CCQDs showed excellent scale inhibition performance. The carboxyl
group is terminated on the surface of the carbon quantum dot, which is easier to
dissociate and form anions under the alkaline condition and react with scale ions. The
scale inhibition efficiency of CCQDs in alkaline is higher than that of in the acidic
solution. So the CCQD is more suitable for application in the alkaline solution than in
the acid solution.
The scale inhibition effect of CCQDs can be easily observed from the scale
inhibition test (Figure 5). There are large amount of scales in the beaker and on the
beaker wall after heating 10 h without adding CCQDs (Figure 5a). In contrast, no
scale could be observed after addition of CCQDs with a similar heating time of 10 h
(Figure 5b).
Figure 5 The photos of CaSO4 solution: (a) free-CCQDs; (b) with CCQDs. Other conditions: T =
80 oC; heating time = 10 h.
In order to eliminate the influence of citric acid to the scale inhibition, a control
scale inhibition experiment of citric acid was carried out (Figure S2), citric acid had
little scale inhibition performance for CaSO4, its scale-inhibition efficiency can only
reach 20 % and this number was almost constant with the increasing dosage of citric
acid. It was demonstrated that CCQDs synthesized from citric acid has excellent
scale-inhibiting ability. As efficient scale
inhibitors, polyaspartic acid and
polyepoxysuccinic acid have the disadvantages of difficult preparation, strict use
conditions and high price. On the contrary, CCQDs are low-toxic, environment
friendly, and cheaper to manufacture. It has strong competitiveness in mass
production and applications.
To understand the scale inhibition mechanism of carbon quantum dots, XRD
(Figure 6) and SEM (Figure 7) were performed to analyze. As shown in Figure 6,
the scales formed with free indicators is calcium sulfate dehydrate [27]. After addition
of CCQDs in the solution, the calcium sulfate dihydrate was transformed to calcium
sulfate hemihydrate. From Figure 6b, we can see crystal transformation occurred,
there was a peak at 2θ = 20° and the peak at around 2θ = 11° disappeared and the
peak at around 2θ = 15° appeared. With the concentration of CCQDs increasing,
calcium sulfate hemihydrate was transformed to anhydrous calcium sulfate [27]
(Figure 6c, 6d). When the dosage of CCQDs increased from 20 mg to 40 mg, the
ratio of peak intensity at 2θ = 25° to peak intensity at 2θ = 30° become weaker.
According to this result, it was obviously that the planes at around 2θ = 25° were
inhibited. So the addition of CCQDs caused the distortion of calcium sulfate crystal
lattice. This result is also confirmed by SEM image of scales (Figure 7), the surface
of dehydrate calcium sulfate is smooth and the shape is rod-like (Figure 7a). After
addition of CCQDs, the morphologies of the scales changed greatly. Needle shaped
crystallites reduce and disorderly granular scales increase (Figure 7b). According to
the above results, it can be speculated that lattice distortion happened due to the
presence of CCQDs. Morphologies of barium sulfate scales also have changed greatly
after addition of CCQDs. In the absence of inhibitor, barium sulfate particles, which
are brick-shaped with a width of about 5 μm and the length-width ratio is about 2:1
(Figure 7c). When addition of inhibitor (Figure 7d), the brick-shaped barium sulfate
particles changed to flower-shaped "fleshy plants" with blade length 2-10 μm.
Figure 6 XRD of calcium sulfate scales with different dosage of CCQDs: (a) 0 mg/L; (b) 5 mg/L;
(c) 10 mg/L; (d) 20 mg/L; (e) 40 mg/L.
Figure 7 SEM images of scales: (a) CaSO4, free-CCQDs; (b) CaSO4, with CCQDs 20 mg/L; (c)
BaSO4, free- CCQDs; (d) BaSO4, with CCQDs 4 mg/L.
The possible inhibition mechanism according to the above results is depicted in
Figure 8 (calcium sulfate). When CCQDs dissolved in water, negatively charged
carboxyl anions chelate with Ca2+, which increased the solubility of inorganic salt and
hamper the normal growth of inorganic salt crystal, reducing the formation of salt
scale. Meanwhile, the CCQDs were adsorbed on the microcrystalline of inorganic salt,
which increased the repulsion between particles, hindered their coalescence, and made
them in a good dispersion state, so as to prevent or reduce the formation of scale
substances. At a smaller size of CCQDs, the Brownian motion is much faster. The
rapid movement of carbon quantum dots exacerbated the destruction of calcium
sulfate crystals, causing the calcium sulfate grew anomaly, and thus lattice distortion
happened. So, calcium sulfate scale was fragmented and disordered.
Figure 8 Possible scale inhibition mechanism of calcium sulfate
4. Conclusions
Carbon quantum dots were synthesized by a simple method of thermal
decomposition of citric acid. The XPS results reveal that the surface of carbon
quantum dots is rich of carboxyl groups. The as-prepared CCQDs exhibit good
scale-inhibition properties. The scale inhibition rates of CaSO4 and BaSO4 scales were
measured by static scale inhibition method. And the effects of CQDs, constant
temperature, pH and other factors on the scale inhibition performance were discussed.
As a new type of high efficient scale inhibitor, the CCQDs have many advantages,
such as non-toxic, biocompatible and environment friendly. This kind of green scale
inhibitor can prevent the formation of scales, improve the efficiency of heat exchange,
reduce power or fuel consumption, reduce the sewage water treatment and improve
water use efficiency. It will bring great influence on many application fields, such as
water treatment, desalination of sea water, metal smelting, petrochemical industry etc.
Acknowledgements
Authors thank the financial support of National Nature Science Foundation (No.
21376178), Tianjin Innovation and Development of Regional Marine Economy
Demonstration project (cxsf2014-26), and the Youth Innovation Foundation of Tianjin
University of Science & Technology (No. 2015LG15). Authors thank Dr. Xiaobin
Lian (Quanzhou Normal University) for helping collection and analysis of the XPS
experimental data. Authors thank Prof. Bin Ren (Xiamen University) for his English
correction and good advice.
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Graphical Abstract
Supporting Information
Fig. S1. The X-ray diffraction of CCQDs obtained by different pyrolysis time: (a) 10 h, (b) 20 h,
(c) 30 h, and (d) 40 h.
Fig. S2. The scale inhibition efficiency of CCQDs and citric acid for calcium sulfate.
Table S1. The atomic percent (at. %) of CCQDs from XPS (H was not considered).
10-h
CCQDs
20-h
CCQDs
30-h
CCQDs
40-h
CCQDs
C (at. %)
60.6
62.5
66.1
66.6
O (at. %)
39.4
37.5
33.9
33.4
|
1901.11470 | 1 | 1901 | 2019-01-31T16:58:41 | Boundary conditions at the interface of finite thickness between ferromagnetic and antiferromagnetic materials | [
"physics.app-ph"
] | Systematic approach has been applied to obtain the boundary conditions for magnetization at an interface between ferromagnetic (FM) and antiferromagnetic (AFM) materials in the continuous medium approximation. Three order parameters are considered inside an interface of finite thickness magnetization $\mathbf{\text{M}}$ of FM, magnetizations of both sublattices $\mathbf{\text{M}}_{1}$ and $\mathbf{\text{M}}_{2}$ of AFM. The boundary conditions are defined in terms of some average properties of the FM/AFM interface. The interface has a finite thickness which is much less than spin wave length. This approach allowed to take into account the interface anisotropy, interface symmetric exchange coupling and interface coupling resulting from inversion symmetry breaking in the vicinity of the interface. | physics.app-ph | physics | ACCEPTED MANUSCRIPT
Boundary conditions at the interface of finite thickness between ferromagnetic and antiferromagnetic materials
Oksana Busel1,*, Oksana Gorobets1, Yuri Gorobets1,2
1Faculty of Mathematics and Physics, National Technical University of Ukraine "Igor Sikorsky Kyiv Polytechnic
Institute", Prospect Peremohy 37, Kyiv, 03056, Ukraine
2Institute of Magnetism NAS and MES of Ukraine, Vernadskiy Av., 36-b, Kyiv, 03142, Ukraine
*[email protected]
Abstract: Systematic approach has been applied to obtain the boundary conditions for magnetization at an
interface between ferromagnetic (FM) and antiferromagnetic (AFM) materials in the continuous medium
approximation. Three order parameters are considered inside an interface of finite thickness magnetization
of FM,
magnetizations of both sublattices
and
of AFM. The boundary conditions are defined in terms of some
average properties of the FM/AFM interface. The interface has a finite thickness which is much less than spin wave
length. This approach allowed to take into account the interface anisotropy, interface symmetric exchange coupling
and interface coupling resulting from inversion symmetry breaking in the vicinity of the interface.
© 2018. This manuscript version is made available under the CC-BY-NC-ND 4.0 license
http://creativecommons.org/licenses/by-nc-nd/4.0/
Keywords: antiferromagnetic spintronics, interface, boundary conditions, spin waves.
Introduction
Antiferromagnetic spintronics has emerged recently as a research area [1]. Neel considered AFMs as extremely
interesting but useless and for the long time nobody has touched this topic [2]. Back in the days it was hard for the
outside observer to visualize the magnetic structure of AFM, which was caused by the fact that magnetic sublattices
are compensated in the ground state and it doesn't usually create scattering fields unlike FMs. AFMs requires strong
magnetic fields for the transition into magnetized state.
But AFM have a number of advantages that make them very interesting nowadays. First, they allow to work
within THz frequencies [3], which is much more rapid than the frequencies accessible in FMs. Second, ability to
manipulate AFMs, namely to L-vector -- Neel order, as with electric and spin currents has been shown recently [4]. It
is possible to create L-vector excitation in the AFM layer through interface exchange interaction of neighboring FM
layer, as well as manipulating L-vector with the help of this [5, 6] as it is illustrated in Fig. 1. Moreover, methods of
detection of L-vector has been discovered which are rather simple, for example, on basis of anisotropic
magnetoresistance effect [7]. Also, X-ray magnetic linear dichroism (XMLD) provides one of the few tools to measure
AFM order [8]. As a result, there is a possibility as to manipulate L-vector without application of strong magnetic
fields and to detect it. And this has become popular for devices in the fields of magnonics and spintronics [6].
The interface between FM and AFM materials is investigated intensively during last decades, both theoretically
and experimentally. Number of papers is dedicated to research of boundary conditions on the interface between FM
and various materials, for example, the interface of a FM layer and a non-magnetic metal [9], as well as at the FM/AFM
interface [10]. In particular, the influence of interface properties on the phenomenon of exchange bias of the hysteresis
loop in FM/AFM structures was discovered a long time ago [11-13]. However, at the present time, interest to these
effects still persists in connection with practical applications. There are theoretical models of this effect, which
consider the interfaces between FM and AFM as either uncompensated [13] or compensated [14]. Besides, FM/AFM
interface attracts attention of researchers in view of the observed domain structures in the magnetic force microscopy
(MFM) experiments supported by micromagnetic calculations and magneto-resistive measurements which confirmed
difference of the magnetic states in these microstructures for both compensated and uncompensated cases [14].
Polarization-dependent XMLD spectro-microscopy has been presented that reveals the micromagnetic structure on
both sides of a FM/AFM interface [15]. Remanent hysteresis loops, recorded for individual FM domains, show a local
exchange bias. The alignment of the FM spins is determined, domain by domain, by the spin directions in the
underlying AFM layer [15]. In any case, the quality of the interface influences on the magnetic parameters of FM/AFM
layers. Besides, the investigation of magnetic ordering on the boundary of FM/AFM is important for development
antiferromagnetic spintronics [1]. However, the latter type of boundary conditions is insufficiently investigated.
M1M2M ACCEPTED MANUSCRIPT
In this paper a systematic approach has been applied for deriving boundary conditions at an interface between
FM and AFM materials which was used to obtain the boundary conditions for magnetization at an interface between
two FM materials in the continuous medium approximation [16]. This approach allows one to take into account the
finite thickness of the FM/AFM interface as the boundary conditions are defined in terms of some average properties
of the interface.
Boundary conditions between FM/AFM:
In order to develop the antiferromagnetic spintronics, it is important to have boundary conditions on the
interface of FM/AFM. Thus, the task of this work is to find the most general form of the boundary conditions between
FM and two-sublattice AFM taking into account the fact that the interface, as a composite material with finite thickness
δ which is much less than the length of the spin wave λsw [16].
Fig. 1. The schematic image of the system consisting of FM, interface of finite thickness between FM/AFM
and two-sublattice AFM
The normal to the interface of magnets is parallel to the y-axis. The general form of energy taking into account
four energies, namely uniform and non-uniform exchange between sublattices, uniaxial magnetic anisotropy,
antisymmetric (Dzyaloshinskii -- Moriya) exchange interaction (DMI) and phenomenological non-local exchange
coupling terms has the following form:
. (1)
Normal
is parallel to y-axis, unit vector of anisotropy
is parallel to the z-axis and unit vector of DMI is
FM is magnetized along the z-axis:
AFM, where the AFM vector is
is parallel to the z-axis (as shown in Fig. 1) and the z-axis is easy axis in the
are uniform and non-uniform
(in the ground state);
,
exchange parameters between 1st and 2nd AFM sublattices, respectively;
,
,
,
are uniform
and non-uniform exchange parameters between FM-1st and FM-2nd AFM sublattices, respectively;
,
are non-uniform exchange parameters in the FM layer, 1st and 2nd AFM sublattices, respectively;
,
,
,
are uniaxial magnetic anisotropy parameters in the AFM layer, between FM-1st and FM-2nd AFM
2112121122121212122121212221(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)()()21(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)()()21(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)()()21(cid:160)(cid:160)()()()()(cid:160)((cid:160)(cid:160)2WdyAyyyyyyyAyAyyyyyyyyyyyMMMMMMMMMMMMMMMMn122121211221212112221211122112212122211(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)22(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)()()())()((cid:160)(cid:160)(cid:160)(cid:160)(cid:160)(cid:160)())()()()()()())(yyyyyyyydddyyyyyyyyyyyyMnMnMnMnMnMnMnMnMMnMMnMMnMMMMMMMMMMMMnn.nM12()LMM12()Ay12()y1()Ay2()Ay1()y2()y()y1()y2()y12()y1()y2()y ACCEPTED MANUSCRIPT
sublattices, respectively;
,
,
are uniaxial magnetic anisotropy parameters in the FM layer, 1st
and 2nd AFM sublattices, respectively;
,
,
are antisymmetric DMI parameters between AFM
sublattices, FM-1st and FM-2nd AFM sublattices, respectively;
,
are parameters of phenomenological
non-local exchange coupling terms between 1st-2nd and 2nd-1st AFM sublattices, respectively;
,
,
,
are parameters of phenomenological non-local exchange coupling terms between FM and 1st and 2nd AFM
sublattices, respectively.
The constants in the energy (1) have typical dependency on the y coordinate in the interface which is illustrated
in Fig. 2:
Fig. 2. The typical functional dependences of the constants in the energy (1) on the y coordinate in the interface
Effective magnetic fields have been found:
. (2)
The Landau-Lifshitz equation is integrated over the thickness of the interface
:
. (3)
Oder parameters
are considered as slowly varying functions with
, and the coefficients
,
,
,
,
,
,
,
,
,
,
,
,
,
,
as rapidly varying functions (Fig. 2) for
,
.
. (4)
,
,
,
,
,
,
,
,
deriving boundary conditions taking into account
The notation is used, where the sign means averaging the function along the thickness of the interface.
The values of constants on the interface are presented in Table 1:
12()y1()y2()y12()dy1()dy2()dy12()y21()y1()y2()y1()y2()y1122effeffeffWWWHMHMHM0,y111002220000effeffeffdygdytdygdytdygdytMMHMMHMMH12,,(cid:160)(cid:160)(cid:160)(cid:160)MMM0,y1()Ay2()Ay12()Ay1()y2()y()y1()y2()y12()y12()dy1()dy2()dy1()y2()y12()y1()y2()y12()y12()y21()y1()y2()y1()y2()ysw1102200000effeffeffdydydyMHMHMH ACCEPTED MANUSCRIPT
Table 1. The notations of constants on the interface, where
is the thickness of the interface
Then after integration of (4) the boundary conditions can be written in vector form as:
. (5)
In the case of infinitely thin interface the constants of the uniform exchange between magnetizations of
different magnetics have the form of
,
, where
is a delta function [17, 18].
The similar approach is a standard one for FM1/FM2 interface and in our case it implies that the coefficients of the
uniform exchange are properly described with the formulas
,
in the Table 1 for the interface
of finite thickness, where
is the interface thickness,
,
are constants which may depend on interface properties,
including interface roughness.
The boundary conditions in the vector form for the infinitely thin interface are sufficiently simplified since in
this case
and hence some terms containing
will be equal to zero:
. (6)
101()y110()AydyA110()ydy10()0y110()ydy202()y220()AydyA220()ydy20()0y220()ydy0()y12120()AydyA110()dydyd10()0y110()ydy10()0y110()ydy220()dydyd20()0y220()ydy20()0y220()ydy12120()dydyd120()0y21210()ydy12012()y12120()ydy210()0y12120()ydy12211211121121211121211111121211112122122122120AAyyddyAAyyMMMMMMMMMMnnMMnnMMnnMMMnMnMMMMMMMM212212222212212222112212112211220ddyAAyddMMMMnnMMnnMMnnMMnMMnMMMMMMMMMMnnMMnnMMnnMMnMM12120yyMMnMM11()AyAy22()AyAyy11AA22AA1A2A01211121112122122221122000AyyAyyAAyMMMMMMMMMMMMMMMMMM ACCEPTED MANUSCRIPT
For example, the conditions (5) have been linearized taking into account the ground states of magnetization of
FM, AFM and the interface, considering the small perturbations of order parameters relative to the ground state as
follow:
where
, (7)
, (8)
then
is deviation magnetization of FM,
,
are deviation magnetization of two sublattices AFM,
is the
projection of the magnetization of FM,
and
are projections of the magnetizations of the first and second
sublattices respectively of the AFM to the z-axis in the ground state.
The notations are used
.
The linearized boundary conditions have the following form:
. (9)
Then the linearized boundary conditions for the infinitely thin interface can be written as:
. (10)
The linearized boundary conditions in Eqs. (8) and (9) do not include DMI and are valid in the case when DMI
gives a much smaller contribution than the exchange energy. The boundary conditions in the vector form (5) are also
valid with considering the DMI.
The resulting boundary conditions on the FM/AFM interface are also useful for experimental researchers.
Namely, the boundary conditions are applicable for the determination of the magnetization orientation in the interfacial
boundary calculation for antiferromagnet-based tunnel junction, since it was demonstrated that efficient rotation of
staggered moments in the antiferromagnet can be induced by the exchange-spring effect of the adjacent FM layer [19]
and it was verified that antiferromagnetic moments in IrMn are persistently pinned along the easy direction of IrMn
with in-plane fields due to the unidirectional anisotropy [20].
Conclusions
General form of boundary conditions has been found at the interface of the FM and two-sublattice AFM for
the both interfaces of finite thickness and infinitely thin. The boundary conditions have general form and can be used
for any type of FM/AFM interfaces for which the energy includes uniform and non-uniform exchange between
sublattices, uniaxial magnetic anisotropy, DMI and phenomenological non-local exchange coupling terms in the form
of Eq. (1). Thus, restrictions of generality in such boundary conditions are due to the assumption of isotropic exchange
(the exchange-constant tensor has the diagonal form) and uniaxial magnetic anisotropy of FM and AFM. Herewith
010111112022222(cid:160)(cid:160)(cid:160)(cid:160)(cid:160),,,(cid:160)zxxyyzxxyyzxxyyMmmMmmMmmMemmeeMemmeeMemmee0101202MMMmmmm1m2m0M01M02M0200000010102(cid:160)(cid:160)1(cid:160),(cid:160);;(cid:160);(cid:160)MMMMMMxy1212121011121211011112112122022121222022221122000011mmAmmAmmyymmmmymmAmmAmmyymmmmyAmmAmm1012212120110mmymmmmyy121011122120221211220000110mmAmmyymmAmmyymAmmAmmy ACCEPTED MANUSCRIPT
the interfacial roughness influences only the following coefficient values
,
,
,
,
,
,
,
,
,
(see Table 1) for the interfaces of both finite thickness and infinitely thin.
The resulting boundary conditions are important for investigating the hysteresis loop of the FM/AFM
structures, for studying the micromagnetic structure near the FM/AFM interface, for modeling the anisotropic
magnetoresistance and propagation of spin waves in the FM/AFM system. The results obtained will contribute to a
progress an area antiferromagnetic spintronics.
Acknowledgement
This work was supported by the European Union's Horizon 2020 research and innovation programme under
the Marie Sklodowska-Curie GA No. 644348 (MagIC).
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1A2A121d2d1212 |
1911.13206 | 1 | 1911 | 2019-11-29T17:14:46 | Multi cloak invisibility, a new strategy for simultaneous acoustic and electromagnetic invisibility | [
"physics.app-ph",
"physics.class-ph"
] | Based on electromagnetic and acoustic transformation theory, a new strategy has been presented in this article to implement double invisibility cloaking, which has not been done yet. By applying a combination of four conventional cloaking methods, for cloaking an object by electromagnetic and acoustic waves, which are two essential methods for objects detection (sonar, radar, eye, ear, camera ...), the object will be blind or deaf, while it will be undetectable acoustically and electromagnetically simultaneously. In deaf mode structure, the object has an interaction with electromagnetic waves; so it can see what is outside the cloaking structure electromagnetically while it has not any acoustic interaction with the outside, but in blind mode arrangement, as opposed to the deaf arrangement, the acoustic link has turned on while there is no electromagnetic connection. Finally, the proposed approach in this paper does not generalize for any two classes of physics, electrical-mechanical, thermal-mechanical, electrical-thermal, electromagnetic-sonic, etc. | physics.app-ph | physics | Multi-cloak invisibility, a new strategy for simultaneous acoustic
and electromagnetic invisibility
Hasanpour Tadi Saeed1, shokri Babak1, 2, *
1Laser and Plasma research institute, Shahid Beheshti University, G.C., P.O. Box, 19839-69411, Tehran,
Iran.
2Physics Department of Shahid Beheshti University, G.C., P.O. Box, 19839-69411, Tehran, Iran. (Email:
[email protected])
Based on electromagnetic and acoustic transformation theory, a new strategy has been presented in this article to
implement double invisibility cloaking, which has not been done yet. By applying a combination of four
conventional cloaking methods, for cloaking an object by electromagnetic and acoustic waves, which are two
essential methods for objects detection (sonar, radar, eye, ear, camera ...), the object will be blind or deaf, while it
will be undetectable acoustically and electromagnetically simultaneously. In deaf mode structure, the object has an
interaction with electromagnetic waves; so it can see what is outside the cloaking structure electromagnetically
while it has not any acoustic interaction with the outside, but in blind mode arrangement, as opposed to the deaf
arrangement, the acoustic link has turned on while there is no electromagnetic connection. Finally, the proposed
approach in this paper does not generalize for any two classes of physics, electrical-mechanical, thermal-mechanical,
electrical-thermal, electromagnetic-sonic, etc.
Keywords: Cloaking, acoustic cloaking, electromagnetic cloaking, transformation optics, transformation
acoustics, invisibility
Introduction
Today, the ability to create hidden objects is an interesting subject to scientific researchers. After Pendry
published his article about Transformation Optics (TO), invisibility has been no longer an imagination
[1]. In addition to invisibility, there are many applications based on TO theory such as cloaking device [1-
6], perfect lens [7-9], electromagnetic (EM) wave controlling [10-13], etc. After TO method proved its
strength in electromagnetism, researchers in other branches of physics and engineering developed an
interest in exploring and employing transformation coordination in acoustic [14-17], elastic waves [18],
thermodynamics and heat transfer [19], seismic waves [20], fluid flow [21], etc. The most important
1
studies in the application of transformation coordinates are fields and waves controlling, new device
design, and invisibility. However, what gave us this method, which was not imaginable before, is
invisibility.
Electromagnetic invisibility makes objects upon radar, eyes, camera, night vision camera, and any
electromagnetic waves detector out of reach. Acoustic cloaking makes objects hidden against sonar, ears
and any acoustic sensors and seismic waves cloaking can protect buildings against earthquake disturbed
oscillations. In any branch of physics, there are some methods to create an ideal cloak, but nothing is
perfect [22]. In any type of cloaking (EM, acoustic …), there are many techniques for detection, and the
hidden object with perfect cloaking, is still detectable [23-25], although somewhat complicated. If an
object is ideally cloaked against EM waves and cannot be detectable electromagnetically, it can be
detected by other physical methods, for example by acoustic waves.
While invisibility is a fascinating subject, multi-cloak invisibility is super-fascinating. In the field of heat
and electricity conduction, it has been done earlier [27]. Furthermore, there is an example of triple carpet
cloaking to hide objects against acoustic, EM, and water waves [28]. In the governing equation and
physical parameters (electrical and thermal conductivity of materials) of heat and electric conduction,
there are many similarities. Hence, it is not difficult to discover materials which conduct electricity and
heat (For example, copper is an electric and thermal conductor) and it will have the same behavior for
heat and heat transfer. Heat and electric current are transferred, in addition to the material's conductivity
depending on the structure of the geometric design. They determine the distribution of electrical and
thermal flow. These features have been used in double thermal and electric current cloaking [27], with a
single structure. In contrast to the similarity of the governing equations of electric and heat conduction, if
this similarity does not exist (for example acoustic and EM wave propagation), it would not be possible to
provide simultaneous cloaking by a single structure with a geometric design. In the field of invisibility or
cloaking, inhomogeneous, anisotropic, and controllable materials are required. Fortunately, metamaterials
have the power to create structures with appropriate properties. However, it is so difficult to build a
metamaterial which works simultaneously in two or more branches of physics (electromagnetism,
acoustics, thermodynamics ...). So we cannot produce a multi- cloaking shell with a single structure.
2
There is no physical object which is perfectly invisible, but if the detection method is more complicated,
the object's detection possibility decreases. Perfect invisibility is a dream. We can get closer to it, but it
never happens. Two most important methods for detection are based on acoustic and EM waves
scattering. If an object is cloaked simultaneously by these two detection methods, it is very hard to track.
In this paper, we introduce a new procedure for cloaking an object by acoustic and EM waves
simultaneously. This method presents two modes of cloaking, blind and deaf, which is based on a
combination of perfect cloaking [2] and out of shell cloaking [5]. In blind mode, according to Fig.1, two
cloaking structures, acoustic out of shell cloak (AOSC) and electromagnetic perfect cloak (EMPC),
together make the object double-cloaked. EMPC structure cloaks any object positioned inside the
structure and AOSC is an external device which hides objects outside the AOSC structure. By combining
these two structures, a double-cloaking area can be created.
As it can be seen in fig.2, EM wave scattering simulation shows that EM waves cannot penetrate inside
the EMPC shell and in the waveform of transmission waves are preserved. On the other hand, AOSC can
hide objects located outside the structure acoustically as shown in fig.3, so if the object and EMPC are
positioned near the AOCS, the surface can be cloaked from acoustic waves. For this purpose, two anti-
images were embedded inside the complementary area (for the object and EMPC). This structure can
cloak objects outside the shell, as shown in fig.3. In this arrangement, only the acoustic waves reach the
object not EM waves, so this arrangement is called blind mode.
In the deaf mode, the structure is similar to the blind arrangement, with two differences; an outer shell
(EMPC) with a perfect acoustic cloak (PAC) and an internal structure (AOSC) with EM waves out of
shell (EMOSC) are replaced. This arrangement is shown in Fig.4. Due to the PAC layer, acoustic waves
in the PAC are canceled as shown in Fig.5. While EMOSC makes the object invisible, it can interact with
EM waves, as shown in fig.6. So this arrangement is called deaf mode.
3
Figure 1: blind arrangement to the double-cloaking.
Figure 2: pattern of electromagnetic plane wave interaction with perfect cloak[2].
Figure 3: out of shell acoustic cloaking[17].
4
Figure 4: deaf arrangement to the double-cloaking.
Figure 5: electromagnetic out of shell cloaking[5].
Figure 6: perfect acoustic cloaking structure[17].
Materials and methods:
In the perfect cloaking, the object does not interact with the EM waves, so there is no absorption,
scattering, and dispersion for the waves. Hence, when a wave passes within the invisible body, its
5
waveform and phase remain unchanged. As previously mentioned, an electromagnetically hidden object
is apparent for other waves (acoustic, elastic ...) or detection methods. If a PAC shell covers an EMPC
structure, they are acoustically invisible, but the PAC layer destroys the electromagnetic cloak because
the EMPC can hide objects inside its construction and the PAC layer located outside. So the PAC layer is
visible for EM waves and invisible for acoustic waves. Out of shell invisibility is a solution to this
problem; the object is undetectable while interacting with the EM waves or acoustic waves. In this
method, any target could be located outside the cloaking structure, so if another layer joined to the
structure, this layer could be cloaked, the same as the target, while there is not any destructive influences
on the invisibility. Thus, from the acoustic and EM points of view, the target and the added layer are
cloaked. If the added layer is a PAC, then the object will be simultaneously cloaked, consequently we call
this arrangement double-cloaking structure. This approach can be applied to other methods of cloaking
objects. As previously discussed, two essential modes of invisibility, deaf and blind for simultaneous
acoustic and EM cloaking, will be addressed in the following part.
Blind cloak
According to Fig.7, there are four regions: two regions for acoustic out of shell cloaking (I, II), an object
region (III) and a perfect EMW cloak (IV). In this mode, a combination of acoustic out of shell cloak
(AOSC) and perfect electromagnetic cloak (EMPC) have been used. In a 2D cylindrical AOSC, there are
three essential areas: a core area with inner radius "a," which matches the wave phase, a complementary
area located between spaces "a" and "b," which produced anti-image for outside until the radius "e."
Objects inside this area are cloaked via creating an anti-image region embedded inside the complementary
structure. AOSC material parameters can be obtained according to the presented method in Ref- [17].
Hence, coordinate transformation equations are obtained as
6
''2''2'', r,() , ar,, br.rbbrfrbrbra Here,
, where a and b are core and outer complementary radius of AOSC respectively, and e is
outer boundary of it. So, based on transformation theory, mass density tensor and bulk modulus in the
acoustic cloaking structure are obtained as
, respectively,
where
is Jacobean transformation matrix with
component. If
and
are background
material acoustic parameters, then
,
,
are complementary material parameters, anti-image of object parameters embedded in complementary
area are calculated as
,
,
And core material parameters are as follows
,
,
Additionally, in this arrangement, the object and the AOSC are covered with EMPC to hide them from
the electromagnetic point of view. The EMPC outer radius should not be larger than e, because the AOSC
does not work out of this area. see Ref- [2] for the EMPC, coordinate transformations equations are
7
2bea1''1'()() , ()det (r)det Trrr'iijjxx0 00'0004'04rb'00objectantiobjectobject4'4antiobjectobjectrb0''0004''04ab
EMPC permittivity (
) and permeability (
) tensors have been calculated based on the theory of
coordinate transformations as
. Finally, EMPC tensor components are derived
as
Figure 7: Segmentation of blind arrangement areas.
Deaf cloak
As shown in Fig.8, in this case, an EMOSC for electromagnetic and a PAC for acoustic cloaking are used.
Like the blind mode, Jacobin's matrix and coordinates transformations for cloaking structures are
obtained. The procedures used in Ref- [2-3] have been used to obtain EMOSC and PAC parameters,
respectively. Referring to Ref.[3]
are transformation equations in region II.
Hence the permittivity and the permeability tensors in the complementary area have been obtained as
8
''',,.dcrcrdzz'''' , det det TT2(cid:160).,,rrzzrcrrrcrccrec''32 , , rrzz
Also
are transformation equations in region I. Then material parameters
in this region have been derived as
by assuming the background to be air.
According to Ref-[2], PAC parameters are
and
for mass density tensor
and
for bulk modulus, which compress regions I, II and III into region IV, as to
transformation coordinate theory.
Figure 8: Segmentation of deaf arrangement areas.
9
'''''''''''31,22,23(23)2.rrzzrrrrr''"/ , , "racrzz2""""""1,rrrrzzea0 rrcr0rrc20(cid:160)rdcrcc Result and discussion
In this section, electromagnetic and acoustic waves scattering patterns have been shown for both blind
and deaf modes. Acoustic wave scattering, according to Ref- [17], can be studied using the Maxwell
equations. In fact, in Ref- [17], the acoustic propagation equations are mapped to Maxwell's equations
with a substitution of their variables and the problem of the acoustic waves scattering turns into the
electromagnetic waves scattering. The procedure presented in Ref- [17] is used to simulate the acoustic
cloaking. On the other hand, one of the powerful methods for simulating Maxwell's equations is the Finite
Difference Time Domain (FDTD). The dispersive FDTD method presented in Ref- [30] is used to
simulate the scattering of acoustic and electromagnetic waves because the conventional FDTD simulation
cannot correctly produce the materials applied in the invisible structures.
Blind mode
Referring to Table I, the parameters for AOSC and EMPC have provided. Furthermore, the propagation
of acoustic and EM waves in the presence of blind structures have been simulated.
Table I: structural parameter of blind mode arrangement.
Parameter
Value(cm)
a
b
C
d
e
0.5
1
1.6
1.8
2
1
1
10
Description
AOSC Core radius
AOSC complementary inner radius
AOSC complementary outer radius
EMPC inner radius
EMPC outer radius
Electromagnetic wave length
Acoustic wave length
EMAcoustic
As shown in Fig.9, the EM waves, without penetrating inside the EMPC, will pass through it. Due to the
design of the EMPC, waveform and phase are unchanged, so the objects inside the EMPC are invisible
because there is not an electromagnetic link between the object in cloaking area and outside the
construction. In Fig.10, waveform and phase of the scattering acoustic waves, the same as EM waves, are
unaffected by the structure and an acoustic plane wave saves their shape after interacting with the
structure, while
the object receives acoustic signal. So, while
the object acoustically and
electromagnetically has been cloaked, it has not EMw connection, which means it is blind, but it can hear
acoustic signals.
Figure 9: EMW pattern interface with blind arrangement, without penetration inside the EMPC.
Figure 10: acoustic wave propagation pattern and its interaction with cloaking structure.
11
Deaf mode
The parameters used in transformations and geometric design are shown in Table II.
Table III : structural parameter of deaf mode arrangement.
Parameter
Value (cm)
Description
0.5
1
1.6
1.8
2
1
0.5
EMOSC core radius
EMOSC complementary inner radius
EMOSC complementary outer radius
PAC inner radius
PAC outer radius
Electromagnetic wave length
Acoustic wave length
a
b
c
d
e
The scattering of electromagnetic and acoustic waves can be seen in Figs.11 and 12, respectively. In
Fig.11 electromagnetic invisibility and in Fig.12 acoustic cloaking can be seen. In this mode, sound
waves do not have the ability to penetrate into the structure and do not interact with the inner structure.
Therefore, the cloaking is called deaf. However, in this mode EMw link to the object has turned on.
12
EMAcoustic Figure 11: EMW interaction with deaf mod arrangement.
Figure 12: acoustic wave interaction with deaf mode arrangement.
Conclusion
In this paper we evaluated the possibility of electromagnetic and acoustic double- cloaking of an object,
with a combination of two common cloaking approaches for acoustic and electromagnetic cloaking. The
results showed that the proposed method works for the double-cloaking. This method also has the ability
13
to be generalized to any method of cloaking and it is possible to create other dual cloaking such as
electromagnetic-elastic, sound-wave, and so on.
References
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2. S. A. Cummer, B. I. Popa, D. Schurig, D. R. Smith, and J. Pendry, Physical Review E - Statistical,
Nonlinear, and Soft Matter Physics 74, 1 (2006).
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2825 (2011).
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(2006).
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Review Letters 100, 1 (2008).
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(2011).
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14
18. N. Stenger, M. Wilhelm, and M. Wegener, Physical Review Letters 108, 1 (2012).
19. R. Schittny, M. Kadic, S. Guenneau, and M. Wegener, Physical Review Letters 110, 1 (2013).
20. S. Brûlé, E. H. Javelaud, S. Enoch, and S. Guenneau, Physical Review Letters 112, 1 (2013).
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22. F. Monticone and A. Alù, Physical Review X 3, 1 (2014).
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15
|
1907.13233 | 1 | 1907 | 2019-06-25T07:37:57 | Three-dimensional numerical modeling of surface acoustic wave devices: Acoustophoresis of micro- and nanoparticles including streaming | [
"physics.app-ph",
"physics.flu-dyn"
] | Surface acoustic wave (SAW) devices form an important class of acoustofluidic devices, in which the acoustic waves are generated and propagate along the surface of a piezoelectric substrate. Despite their wide-spread use, only a few fully three-dimensional (3D) numerical simulations have been presented in the literature. In this paper, we present a 3D numerical simulation taking into account the electromechanical fields of the piezoelectric SAW device, the acoustic displacement field in the attached elastic material, in which the liquid-filled microchannel is embedded, the acoustic fields inside the microchannel, as well as the resulting acoustic radiation force and streaming-induced drag force acting on micro- and nanoparticles suspended in the microchannel. A specific device design is presented, for which the numerical predictions of the acoustic resonances and the acoustophoretic repsonse of suspended microparticles in 3D are successfully compared with experimental observations. The simulation provides a physical explanation of the the observed qualitative difference between devices with an acoustically soft and hard lid in terms of traveling and standing waves, respectively. The simulations also correctly predict the existence and position of the observed in-plane streaming flow rolls. The presented simulation model may be useful in the development of SAW devices optimized for various acoustofluidic tasks. | physics.app-ph | physics | Three-Dimensional Numerical Modeling of Surface Acoustic Wave Devices:
Acoustophoresis of Micro- and Nanoparticles including Streaming
Nils R. Skov,1, ∗
Prateek Sehgal,2, †
Brian J. Kirby,2, 3, ‡
and Henrik Bruus1, §
1Department of Physics, Technical University of Denmark,
DTU Physics Building 309, DK-2800 Kongens Lyngby, Denmark
2Sibley School of Mechanical and Aerospace Engineering,
Cornell University, Ithaca, New York 14853, USA
3Department of Medicine, Division of Hematology and Medical Oncology,
Weill-Cornell Medicine, New York, New York 10021, USA
(Dated: 25 June 2019)
Surface acoustic wave (SAW) devices form an important class of acoustofluidic devices, in which
the acoustic waves are generated and propagate along the surface of a piezoelectric substrate. De-
spite their wide-spread use, only a few fully three-dimensional (3D) numerical simulations have been
presented in the literature. In this paper, we present a 3D numerical simulation taking into account
the electromechanical fields of the piezoelectric SAW device, the acoustic displacement field in the
attached elastic material, in which the liquid-filled microchannel is embedded, the acoustic fields
inside the microchannel, as well as the resulting acoustic radiation force and streaming-induced drag
force acting on micro- and nanoparticles suspended in the microchannel. A specific device design is
presented, for which the numerical predictions of the acoustic resonances and the acoustophoretic
repsonse of suspended microparticles in 3D are successfully compared with experimental observa-
tions. The simulation provides a physical explanation of the the observed qualitative difference
between devices with an acoustically soft and hard lid in terms of traveling and standing waves,
respectively. The simulations also correctly predict the existence and position of the observed in-
plane streaming flow rolls. The presented simulation model may be useful in the development of
SAW devices optimized for various acoustofluidic tasks.
I.
INTRODUCTION
The
of
effective
During the past decade, surface acoustic wave (SAW)
devices have been developed for a multitude of differ-
ent types of acoustofluidic handling of micrometer-sized
particles inside closed microchannels. Examples include
acoustic mixing [1], continuous particle or droplet focus-
ing [2, 3] and separation [4, 5], single-particle handling
[6, 7], acoustic tweezing [8 -- 10], two-dimensional single
patterning [11, 12], on-chip studies of microbial organ-
isms [13, 14], and non-trivial electrode shapes to generate
chirped, focused, and rotating acoustic waves [10, 15 -- 17].
of
submicrometer-sized particles has been less successful.
It remains a challenge to handle this in biotechnology
highly important class of particles
including small
bacteria, exosomes, and viruses. Could these particles
be handled in a controlled way, it would be of particular
interest for developing new and more efficient diagnostics
[18]. The first steps towards acoustofluidics handling
of nanometer-sized particles have been taken relying
on acoustic streaming effects with both bulk acoustic
waves (BAW) [19] and SAW [20], or using seed particles
to enhance acoustic trapping in BAW devices [21].
development
handling
∗
†
‡
§
[email protected]
[email protected]
[email protected]
[email protected]
However, these methods have a low selectivity. However,
recently SAW devices have been developed to focusing
[22] and separation of nanoparticles
nanoparticles
[23, 24].
In particular Sehgal and Kirby [23] demon-
strated separation between 100- and 300-nm-diameter
particles on the proof-of-concept stage. To fully uti-
lize the potential of this and similar devices, further
development is necessary to increase the efficiency and
sorting flow rates. Here, numerical simulations may play
a crucial role, both in improving the understanding of
the underlying physical acoustofluidic processes, and to
ease the cumbersome development cycle consisting of
an iterative series of creating, fabricating, and testing
device designs.
An increasing amount of numerical studies include
piezoelectric dynamics in two-dimensional (2D) models
[25 -- 28], but mostly the piezoelectric transducers are in-
troduced in numeric models in the form of analytic ap-
proximations [29 -- 34], and designs are often based on a
priori knowledge of the piezoelectric effect in the un-
loaded substrates typically applied in telecommunication.
In acoustofluidic devices, the acoustic impedance of the
contacting fluid is much closer to that of the substrate
causing waves to behave much differently from those in
telecommunications devices. It is thus prudent to include
the piezoelectric effect and the coupling between the fluid
and substrate in numeric models to accurately describe
the device behavior. Additionally, three-dimensional
(3D) simulations in the literature are scarce, but they
are essential for making full-device acoustophoresis pre-
dictions as many actual acoustofluidic devices do exhibit
9
1
0
2
n
u
J
5
2
]
h
p
-
p
p
a
.
s
c
i
s
y
h
p
[
1
v
3
3
2
3
1
.
7
0
9
1
:
v
i
X
r
a
non-trivial features in 3D due to asymmetric and intri-
cate shapes of electrodes and channels.
In this paper, we present 3D numerical simulations tak-
ing into account the electromechanical fields of the piezo-
electric SAW device, the acoustic displacement field in
the attached elastic material, in which the liquid-filled
microchannel is embedded, the acoustic fields inside the
microchannel, as well as the resulting acoustic radiation
force and streaming-induced drag force acting on mi-
croparticles suspended in the microchannel. The model is
validated experimentally with devices based on the SAW
device described by Sehgal and Kirby [23]. In Section II
we describe the physical model system representing the
SAW device and state the governing equations, and in
Section III we treat the implementation of the model sys-
tem in a weak-form, finite-element model. The results of
the model in reduced 2D and in full 3D are presented in
Sections V and VI, and finally in Sections VII and VIII
we discuss our findings and summarize our conclusions.
II. THE MODEL SAW SYSTEM AND THE
GOVERNING EQUATIONS
The model SAW system is shown in Fig. 1a. Essen-
tially, it consists of a piezoelectric lithium niobate sub-
strate with a specific interdigitated transducer (IDT)
metal-electrode configuration on the surface. On top
of the substrate a microfluidic channel is defined in an
elastic material, either the acoustically soft rubber poly-
dimethylsiloxane polymer (PDMS) or the acoustically
hard borosilicate glass (Pyrex).
We follow Sehgal and Kirby [23] and place the IDT
electrodes directly underneath the microchannel and
choose the periodicity of the electrode pattern to re-
sult in a SAW wavelength λSAW = 80 µm and a (un-
loaded) resonance frequency fSAW = cSAW/λSAW =
(3995 m/s)/(80 µm) = 49.9 MHz. The driving electrodes
are flanked by Bragg-reflector electrodes to (partially) re-
flect the outgoing SAWs traveling along the surface from
the driving electrodes. As described in more detail in
Appendix A, the lattice coordinate system X, Y, Z of the
YX-cut lithium niobate wafer is rotated the usual
128
◦
38
about the x-axis to obtain an optimal
SAW configuration.
◦ − 90
= 128
◦
◦
◦
To facilitate separation of nanoparticles, the axis of
the microchannel is tilted 10
angle relative to the IDT
electrodes. At both ends, the microchannel branches out
in a number of side channels with vertical openings for
inlet and outlet tubing.
In the numerical model, this
inlet/outlet structure is represented by ideally absorbing
boundary conditions.
The SAW device is actuated by a time-harmonic volt-
age difference at frequency f applied to the IDT elec-
trodes. The corresponding angular frequency is ω = 2πf .
The following formulation of the governing equations,
is a further development of our previous work presented
in Refs. [32, 35, 36] to take into account SAW in 3D
2
FIG. 1. Experimental and numeric testing devices. (a) A
testing device, similar to that of Ref. [23]. A wide lithium
niobate base with a 24-pair interdigitated surface metal elec-
trode (IDT) and contact pads (grounded g or ge, charged c
or ce) supporting a borosilicate glass (Pyrex) slab containing
an etched microchannel above the IDT. (b) 3D sketch of the
numerical model containing only a 3-pair electrode (grounded
g or ge: black, charged c or ce: red), and three floating elec-
trodes (f or fe, blue).
models of lithium-niobate-driven ultrasound acoustics in
liquid-filled microchannels.
A. The Voigt notation for elastic solids
In linear elastodynamics with the elasticity tensor
Ciklm, the stress σik and strain ik tensors with i, k =
1, 2, 3 (or x, y, z) are defined in index notation as
(cid:0)∂iuk + ∂kui
(cid:1),
ik =
1
2
σik = Ciklmlm
(1a)
(1b)
In the Voigt notation (subscript V) [37], the symmetric
stress and strain double-index tensor components σik =
σki and ik = ki are organized in single-index vectors σα
and α with α = 1, 2, . . . , 6, as,
=
1
2
3
4
5
6
11
22
33
223
213
212
, σV =
=
σ1
σ2
σ3
σ4
σ5
σ6
σ11
σ22
σ33
σ23
σ13
σ12
, (2a)
V =
and the stress-strain relation is written,
(3)
where Cαβ is the 6×6 Voigt elasticity matrix. We also
introduce the 3×6 Voigt matrix gradient operator ∇V,
σα = Cαββ,
∇V =
0
0 ∂z ∂y
0 ∂y 0 ∂z 0 ∂x
0 ∂z ∂y ∂x 0
0
(4)
∂x 0
.
The equations governing the device are divided into
three sets. One set is the first-order time-harmonic
equations for the acoustic fields, the second set contains
the steady time-averaged second-order fields, and the
third set are the time-dependent equations describing the
acoustophoretic motion of suspended particles.
B. The time-harmonic first-order fields
is the real part Re(cid:2)g(r, t)(cid:3). All terms thus have the same
By construction, all first-order fields are proportional
to the time-harmonic electric potential actuating the
SAW device at angular frequency ω. Consequently, all
first-order fields are time-harmonic acoustic fields of the
−iωt, where g(r) is the complex-
form g(r, t) = g(r) e
valued field amplitude. The corresponding physical field
−iωt, so this factor is divided
explicit time dependence e
out, leaving us with the governing equations for the am-
plitude g, where we for brevity suppress the spatial ar-
gument r.
In a linear piezoelectric material with a mass density
ρsl and no free charges, the solid displacement field u and
the electric potential field φ are governed by the Cauchy
equation and Gauss's law,
∇V · σV = −ρslω2 u,
∇ · D = 0.
(5a)
(5b)
This equation system is closed by the constitutive equa-
tions relating the stress σV and the electrical displace-
ment D to the strain V and the electric field E, through
the elasticity matrix C, the relative dielectric tensor εr,
and the piezoelectric coupling matrix e,
σV = CV − eTE, with E = −∇φ,
D = ε0εrE + eV.
(5c)
(5d)
Here, ε0 is the vacuum permittivity, εr is the relative
permittivity tensor of the material, and superscript "T"
denotes the transpose of a matrix, see Table I.
3
TABLE I. Elasticity constants Cαβ, mass density ρsl, piezo-
electric coupling constants eiα and relative dielectric con-
◦
stants εik of materials used in this work. 128
YX-cut lithium
niobate values are defined in the global system x, y, z, for
derivations see Appendix A. Note that C12 = C11 − 2C44 for
isotropic materials (Pyrex and PDMS).
Parameter
◦
128
YX-cut lithium niobate [38]
Value
Parameter
Value
C11
C13
C22
C24
C34
C55
ρsl
e15
e21
e23
e31
e33
ε11
ε23
Pyrex [39]
C11
ρsl
ε
PDMS [40 -- 42]
C11
ρsl
ε
202.89 GPa
60.17 GPa
194.23 GPa
8.97 GPa
8.14 GPa
72.79 GPa
−3
−2
−2
−2
−2
−2
4628 kg m
1.56 C m
−1.73 C m
−1.67 C m
1.64 C m
2.44 C m
44.30
−7.96
69.73 GPa
−3
2230 kg m
4.6
1.13 GPa
−3
1070 kg m
2.5
C12
C14
C23
C33
C44
C56
C66
e16
e22
e24
e32
e34
ε22
ε33
C12
C44
Γsl
C12
C44
Γsl
72.33 GPa
10.74 GPa
90.59 GPa
220.29 GPa
74.89 GPa
−8.51 GPa
59.51 GPa
−2
−2
−2
−2
−2
-4.23 C m
4.48 C m
0.14 C m
−2.69 C m
0.55 C m
38.08
34.12
17.45 GPa
26.14 GPa
0.0002
1.11 GPa
0.011 GPa
0.0213
For anisotropic lithium niobate, Eqs. (5a) and (5b) are
turned into equations for u and φ by using the explicit
form of Eqs. (5c) and (5d) written as the coupling-matrix,
(6a)
For isotropic elastic solids with no charges and no
piezoelectric coupling e = 0, only Eq. (5a) is relevant,
and it becomes an equation for u, as Eq. (5c) reduces to
,
1
2
3
4
5
6
Ex
Ey
Ez
(6b)
,
σ1
σ2
σ3
σ4
σ5
σ6
Dx
Dy
Dz
=
=
σ1
σ2
σ3
σ4
σ5
σ6
C11 C12 C13 C14 0
C12 C22 C23 C24 0
C13 C23 C33 C34 0
C14 C24 C34 C44 0
0
0
0
e21 e22 e23 e24 0
e31 e32 e33 e34 0
0
0
0
0
0
0
0
0
0
0
0
0
0 C55C56 -e15 0
0 C56C66 -e16 0
0 e15 e16 ε11 0
0 -e21-e31
0 -e22-e32
0 -e23-e33
0 -e24-e34
0
0
0
0 ε22 ε23
0 ε23 ε33
C11 C12 C12 0
C12 C11 C12 0
C12 C12 C11 0
0
0
0
0
0
0
0 C44 0
0
0
0
0
0
0
0 C44 0
0
0 C44
0
0
0
1
2
3
4
5
6
TABLE II. Material parameters of water from Ref. [44].
Parameter
Speed of sound
Mass density
Dynamic viscosity
Bulk viscosity
Compressibility
Symbol
cfl
ρfl
ηfl
ηb
fl
κfl
Value
−1
−3
1497 m s
997 kg m
0.89 mPa s
2.485 mPa s
−1
452 TPa
(cid:113) 2ηfl
with only two independent elastic constants, C11 and
C44, because C12 = C11 − 2C44 for isotropic material.
ρflω , viscosity ratio β = ηb
In a fluid with speed of sound cfl, mass density ρfl,
dynamic viscosity ηfl, viscous boundary layer thickness
δ =
3 , and effective
2 (k0δ)2, the first-order pres-
damping coefficient Γfl = 1+β
sure field p1 is governed by the Helmholtz equation, and
the acoustic velocity field v1 is given by the pressure gra-
dient,
+ 1
fl
ηfl
∇ ·(cid:0)∇p1
(cid:1) = −k2
(cid:0)1 − iΓfl
c p1, with kc =
−i
ωρfl
(cid:1)∇p1,
v1 =
(cid:19)
(cid:18)
ω
cfl
1 + i
Γfl
2
,
(7a)
(7b)
where kc is the weakly damped compressional wave-
number[43]. See Table II for parameter values.
Turning to the boundary conditions, we introduce n as
the normal vector for a given surface. The SAW device
in Fig. 1 is actuated by a time-harmonic potential of am-
plitude V0 on the surfaces of the charged electrodes (ce)
and 0 V on the grounded electrodes (ge), respectively,
φce = V0 e
−iωt
, φge = 0,
(8a)
A given floating electrode (fe) is modeled as an ideal
equipotential domain with a vanishing tangential elec-
trical field on its surface,
(I − nn) · ∇φfe = 0,
(8b)
where I is the unit tensor, and (I − nn) is the usual tan-
gent projection tensor. Note that this condition is auto-
matically enforced on any surface with a spatially invari-
ant Dirichlet condition applied along it. Note also that
the value of the potential on each floating electrode is a
priori unknown and must be determined self-consistently
from the governing equations and boundary conditions.
At a given fluid-solid interface we impose the usual
continuity conditions [32] with the recently developed
boundary-layer corrections included [43]: the solid stress
σsl is given by the acoustic pressure p1 with the addi-
tion of the boundary-layer stress, and the fluid velocity
v1 is given by the solid-wall velocity vsl = −iωu with the
addition of the boundary-layer velocity vsl − v1,
σsl · n = −p1 n + iksηfl(vsl − v1
n · v1 = n · vsl +
(cid:1),
∇(cid:107) ·(cid:0)vsl − v1
(cid:1),
i
ks
4
(9a)
(9b)
with shear wavenumber ks =
1 + i
δ
.
(9c)
The terms containing the shear wavenumber ks represent
the corrections arising from taking the 400-nm wide, vis-
cous boundary layer into account analytically [43].
All exterior solid surfaces facing the air have a stress-
free boundary condition prescribed,
σ · n = 0.
(10)
This is a good approximation because the surrounding
air has an acoustic impedance 3 to 4 orders of magnitude
lower than that of the solids causing 99.99 % of incident
acoustic waves from the solid to be reflected. Moreover
the shear stress from the air is negligible.
C. The time-averaged second-order fields
The slow timescale or steady fields in the fluid are the
time-averaged second-order velocity v2 and pressure p2
field. These are governed by the time-averaged momen-
tum and mass-conservation equations,
∇ · σ2 − ρ0∇ ·(cid:10)v1v1
∇ ·(cid:0)ρ0v2 +(cid:10)ρ1v1
(cid:11) = 0,
(cid:11)(cid:1) = 0,
(11a)
(11b)
where σ2 is the second-order stress tensor of the fluid
σ2 = −p2I + η(cid:2)∇v2 + (∇v2)T(cid:3) + (β − 1) η (∇ · v2) I.
(11c)
Along a fluid-solid interface with tangential vectors eξ
and eη and the normal vector eζ = n, we use for v2 the
effective boundary condition derived in Ref. [43]. Here,
the viscous boundary layer is taken into account ana-
lytically by introducing the boundary-layer velocity field
vδ0 = vsl − v1 in the fluid along the fluid-solid interface,
(12a)
v2 =(cid:0)A · eξ
(cid:1) eη +(cid:0)B · eζ
(cid:1) eζ,
(cid:17) − iv
(cid:16)∇·v
sl·∇v1
∗
∗
∗
sl − ∂ζv
1ζ
1 − ivsl
vδ0
1 + i
vδ0∗
(cid:1) eξ +(cid:0)A · eη
(cid:26)
·∇(cid:16) 1
(cid:20) 2 − i
(cid:111)
2
1·∇v1
∗
iv
+
2
1
,
(cid:110)
∇·vδ0∗
(cid:17)(cid:21)
(12b)
(cid:27)
vδ0
1
,
(12c)
A = − 1
2ω
Re
B =
1
2ω
Re
where the asterisk denotes complex conjugation.
D. Acoustophoresis of suspended particles
To predict the acoustophoretic motion of a dilute sus-
pension of spherical micro- and submicrometer-sized par-
ticles in the fluid of density ρfl, compressibility κfl, and
viscosity ηfl, we implement a particle tracing routine in
the model. We consider Newton's second law for a single
spherical particle of radius apt and density ρpt moving
with velocity vpt under the influence of gravity g, the
acoustic radiation force F rad [45], and the Stokes drag
force F drag [46] induced by acoustic streaming of the
fluid,
5
dvpt
4π
a3
ptρpt
3
dt
F rad = − 4
3
F drag = 6πaηfl
= ρptg + F rad + F drag,
πa3(cid:104)
(cid:10)(f0p1)∇p1
(cid:1).
(cid:0)v2 − vpt
κfl
(cid:11) − 3
ρfl
2
(cid:10)(f1v1) · ∇v1
(cid:11)(cid:105)
,
(13a)
(13b)
(13c)
Here, f0 = 0.444 and f1 = 0.034 are the monopole and
dipole scattering coefficients of the suspended particles
at 50 MHz, where the values are for polystyrene micro-
and nanoparticles in water [47]. When studying different
particle sizes it is convenient to introduce the radiation
force density f rad as
f rad =
3
4πa3 F rad.
(13d)
By direct time integration of Eq. (13a) applied to a
set of particles initially placed on a square grid, the
acoustophoretic motion of the particles can be pre-
dicted and compared to the experimentally observed
one. We note that gravity effects are negligible as
ρptg (cid:28) κfl
(cid:10)(f0p1)∇p1
(cid:11).
III. NUMERICAL IMPLEMENTATION
Inspired by our previous experimental work, Sehgal
and Kirby [23], we study the SAW test system shown
TABLE III. Dimensions of the numeric 2D and 3D models.
Parameter
Device depth (y)
Solid height (z)
Solid width (x)
Channel height
Channel width
Piezo height
PML length
Electrode depth (y)
Electrode height (z)
Electrode width (x)
Electrode gap
SAW wavelength
No. of electrode pairs
No. of reflectors
Actuation frequency
Driving voltage
Degrees of freedom
Memory requirements
Symbol
Lsl
Hsl
Wsl
Hfl
Wfl
Hpz
LPML
Lel
Hel
Wel
Gel
λSAW
nel
nrf
f0
V0
nDOF
R
2D
-
40-1000
200
50-200
3500
100-500
80
-
0.4
20
20
80
24
0-6
Unit
µm
µm
µm
µm
µm
µm
µm
µm
µm
µm
µm
µm
-
-
3D
1200
500
80
50
900
300
80
400
0.4
20
20
80
4
0
50
1
1
MHz
30-60
V
O(105) O(106)
-
O(10) O(103) GB
FIG. 2. The vertical 2D cross section of the numeric model
and illustration of the embedded electrodes used in simula-
tions, with (a) a highly attenuating, low-reflection polymer
PDMS lid as used in Ref. [23], and (b) a stiff, acoustically re-
flecting Pyrex glass lid. (c) The twelve pairs of grounded (g,
black) and charged (c, red) electrodes, as well as the floating
(f, blue) electrodes, are all included in their entire height, but
(d) lowered into the lithium niobate (yellow) to level with the
substrate. Note that λSAW = 2(Wel + Gel).
in Fig. 1 with actuating electrodes and Bragg-reflector
electrodes placed directly underneath the microchannel.
The parameter values used in the numerical simulation
are listed in Table III, and a sketch of the vertical cross
section of the test system is shown in Fig. 2. Note that
the SAW wavelength λSAW is set by the IDT electrode ge-
ometry as λSAW = 2(Wel + Gel). We study microcavities
defined in either acoustically soft PDMS, see Fig. 2(a),
or the acoustically hard borosilicate glass (Pyrex), see
Fig. 2(b), and we perform numerical simulation in both
2D and 3D.
Following the procedure of our previous numerical sim-
ulations [32, 36], the coupled governing equations from
Sections II B-II D are implemented in the finite-element-
method software COMSOL Multiphysics 5.3a [48], us-
ing the weak-form partial differential equation interface
"PDE Weak Form" in the mathematics module. For
a given driving voltage V0, actuation frequency f , and
angular frequency ω = 2πf specified in the actuation
boundary condition (8a), the numeric model is solved in
three sequential steps: (1) the first-order equations (5)
and (7a) presented in Section II B for the pressure p1,
displacement u, and electric potential φ, together with
the corresponding boundary conditions (8)-(10); (2) the
steady second-order streaming velocity v2 in Section II C
governed by (11) and (12), where time-averaged products
of the first-order fields appear as source terms; and (3)
the acoustophoretic motion of suspended test particles
in Section II D found by time integration of Eq. (13). As
in previous works [32], we have performed convergence
analyses of the model to verify that the model converges
towards a single solution as the mesh size decreases.
Simulations of the full 3D model are time and
computer-memory consuming. Therefore, part of the
analysis has been performed on 2D models to study the
resonance behavior of the device and the acoustic radi-
ation force in the vertical y-z plane normal to the elec-
trodes in the horizontal x-y plane. In these simulations,
presented in Section V, it is possible to model a cross-
section of the device to scale. To investigate effects that
have non-trivial behavior in full 3D, such as the acoustic
streaming and the acoustophoretic motion of suspended
particles presented in Section V, we must perform full 3D
modeling. However, in this case, the extended computer
memory requirements has necessitated a scale down of
the model. The parameters for the 2D and 3D simula-
tions are listed in Table III.
A. Perfectly matched layers
We reduce the numeric footprint of the model by imple-
menting perfectly matched layers (PMLs) in the model as
described by Ley and Bruus [32]: Large passive domains
surrounding the acoustically active region are replaced
by much smaller domains, in which PMLs act as ideal
absorbers of out-going acoustic waves thus completely
removing reflections. In contrast to Ref. [32], the PMLs
in the present model are functions of all three spatial
coordinates.
In the small surrounding domains, the PMLs are im-
plemented in the weak-form governing equations by a
complex-valued coordinate transformation of the spatial
derivatives ∂xi and integral measures dxi appearing,
∂xi → ∂ xi =
dxi → dxi =(cid:2)1 + i s(r)(cid:3) dxi,
1 + i s(r)
1
∂xi,
s(r) = kPML
(cid:88)
i=x,y,z
(xi − x0i)2
L2
PML,i
(14a)
(14b)
Θ(xi − x0i),
(14c)
where s(r) is a real-valued function of position. Here,
s(r) is given for the specific case shown in Fig. 2 with a
6
PML of width LPML,i in the three coordinate directions
i = x, y, z placed outside the region x < x0, y < y0,
and z < z0, Θ(x) is the Heaviside step function (= 1
for x > 0, and 0 otherwise), and kPML is an adjustable
parameter for the strength of the PML absorbtion. The
bottom PML in the niobate substrate is used because
SAWs decay exponentially in the depth on the scale of
the wavelength, whereas the top and side PMLs are used
to mimic attenuating in respective materials over large
distances.
B. Symmetry planes
As in previous numeric works [32, 49], we use an an-
tisymmetry line to reduce the numerical cost of our 2D
models. The antisymmetry line is realized by boundary
conditions on the solid displacement, the electric poten-
tial, and the fluid pressure along the line,
∂xux = 0
uz = 0
1
2
p1 = 0
φ =
V0
(15a)
(15b)
(15c)
(15d)
We check these conditions against the values along the
device centerline in a 2D simulation for a fully symmetric
device and observe that they are in good agreement.
In 3D we cannot use symmetry planes, as the device is
angle between the
◦
manifestly asymmetric due to the 10
IDT and the walls of the microchannel.
C. Embedded electrodes
In the actual device, the 400-nm thick electrodes pro-
trude into the fluid domain. In our numeric model we
simplify the device by submerging them into the sub-
strate to form a planar solid-fluid interface as shown in
Fig. 2. Thereby the fluid-solid interface has no sharp
corners, at which singularities appear in the numeric gra-
dients. Furthermore, the planar interface mitigates the
need for an enormous number of mesh elements ranging
from nm to µm in the fluid domain, which would either
lower the element quality greatly or add massive com-
putational costs. This reduction in model complexity is
justified by the height of the electrodes being less than
1 % of the channel height and having no influence on the
pressure acoustics of the system. On the other hand, we
cannot completely neglect the electrodes, because jumps
in acoustic impedance between the metal electrodes and
the niobate substrate cause partial reflections of SAWs
running along the substrate. Thus we choose to keep but
submerge the electrodes.
TABLE IV. The devices D1 and D2, used in the experimental
validation of the numerical model, differs by the choice of lid.
The other parameters of D1 and D2 are listed in Table III.
Device
Lid material
Lid thickness
D1
D2, see Fig. 1(a)
PDMS
Pyrex
15 mm
0.45 mm
IV. EXPERIMENTAL METHODS
To validate the numerical models, we have performed
experiments on two type of devices listed in table IV,
namely microchannels defined in slabs of either PDMS
(D1) or Pyrex (D2) bonded on top of the lithium nio-
bate substrate equipped with the IDT and Bragg re-
flectors. The PDMS device (D1) is fabricated by stan-
dard photolithography techniques listed in our previous
work [23]. The Pyrex device (D2) is fabricated by glass
microfabrication techniques, briefly described in the fol-
lowing. A microchannel of desired dimensions is wet-
etched in a borosilicate glass wafer by 49% hydrofluoric
(HF) acid using a multilayered mask of chrome, gold, and
SPR220 photoresist. The input and output ports of the
microchannel are obtained from the laser cutting of glass.
The bonding between glass microchannel and lithium
niobate substrate is achieved by coating a 5 µm layer
of SU-8 epoxy on the surface of lithium niobate. The mi-
crochannel is gently placed on the uncured SU-8 and the
epoxy is baked following standard steps. The SU-8 out-
side the microchannel region is selectively crosslinked to
achieve bonding and the SU-8 inside the microchannel re-
gion is dissolved away with a developer, thus obtaining a
Pyrex lid microchannel on top of the lithium niobate sub-
strate (D2). The devices are tested with 1.7-µm-diameter
fluorescent polystyrene particles (Polysciences, Inc.) that
are suspended in de-ionized water (18.2 MΩ/cm, Lab-
conco WaterPro PS) containing 0.7% (w/v) Pluronic F-
127 to prevent particle aggregation. The particle solu-
tion is injected into the microchannel after priming the
devices with 70% ethanol solution to avoid the forma-
tion of air bubbles. An ultrasound field is set up in the
devices by applying an RF signal at desired frequency
to the IDT with a HP 8643A signal generator and an
ENI 350L RF power amplifier. The acoustophoretic mo-
tion of the tracer particles are visualized on a fixed-stage,
upright fluorescent microscope (Olympus BX51WI) with
a digital CCD camera (Retiga 1300, Q Imaging). The
images are acquired with Q-Capture Pro 7 software and
post processed in ImageJ. The electrical impedance of the
devices is measured directly from an impedance analyzer
(Agilent 4395A).
7
V. RESULTS OF THE 2D MODELING
In the following, we compare the results of the 2D mod-
eling in the vertical x-z with experiments carried out on
the two devices D1 and D2 listed in Table IV. Such a
comparison is reasonable because the low channel height
of 50 µm implies an approximate translation invariance
along the y-axis spanning the length (aperture) 2400 µm
of the IDT electrodes, as seen in the 3D geometry of
Fig. 1. Also the variation along the x axis given by the
width 20 µm of the individual electrodes, and the peri-
odicity λSAW = 80 µm the IDT, are much smaller than
IDT aperture along y axis. We can therefore obtain a
reasonable estimate of the electrical and acoustical re-
sponse of the device, by just considering the 2D domain
in the vertical x-z plane shown in Fig. 2.
A. Electrical response
As a first validation of the model, we study the elec-
trical impedance
Z el =(cid:12)(cid:12)Z el(cid:12)(cid:12) e
−iψ =
V0
I
,
(16)
in terms of the driving voltage V0 and the complex-valued
current I through the device, because this quantity is rel-
atively easy to obtain both in simulation and in experi-
ment. We compare model predictions of the magnitude
Line plots of the normalized magnitude (cid:12)(cid:12)Z el(cid:12)(cid:12) and
FIG. 3.
phase ψ of the electrical impedance Z el, as functions of fre-
quency determined by experiment (full red line) and by nu-
merical simulation (dotted black line). The measurements
and simulations are carried out for a microchannel containing
either vacuum or deionized water.
TABLE V. Measured and simulated values of the frequencies
f near the ideal (unloaded) frequency fSAW = 49.9 MHz,
where Z el(f ) and ψ(f ) have local minima and maxima in
Pyrex device D2.
Extremum
fexp
[GHz]
fnum
[GHz]
Relative error
[%]
signal. By adding external stray impedances to our 2D
model to simulate the surrounding 3D system, it is how-
ever possible to generate a slant in the phase curves by
fitting the values of these stray impedances. We do not
show these results as they are descriptive and not predic-
tive in nature.
8
A
B
C
D
E
F
G
H
I
47.35
48.05
49.40
48.65
50.00
47.70
49.10
45.50
49.40
48.25
49.00
50.25
47.50
50.75
48.75
50.00
46.00
48.50
1.9
2.0
1.7
1.7
1.7
2.2
1.8
1.1
1.8
(cid:12)(cid:12)Z el(cid:12)(cid:12) and phase ψ of the impedance with the experimen-
tally measured counterparts.
In the model, we compute Z el from the time-harmonic
dielectric polarization density P and the corresponding
polarization current Jpol in the lithium niobate substrate,
which we treat as an ideal dielectric without free charges,
P = D − ε0E,
Jpol = −iωP .
(17a)
(17b)
The total current I through the device is given by the
surface integral of Jpol, over one of the charged electrodes
with potential φce = V0 and surface ∂Ωce,
I =
The modulus(cid:12)(cid:12)Z el(cid:12)(cid:12) and phase angle ψ = arg(Z el) are thus
(17c)
∂Ωce
Jpol · n dA.
(cid:90)
(cid:12)(cid:12)(cid:12)(cid:12) ,
(cid:12)(cid:12)(cid:12)(cid:12) V0
I
(cid:12)(cid:12)Z el(cid:12)(cid:12) =
In Fig. 3(a) and (b), we compare the values of Z el
computed by Eq. (17d) for our 2D model with those mea-
sured on Pyrex device D2 of Fig. 1(a) and Table IV for
microchannels with air or with DI water. The numerical
simulation predicts correctly the value of the resonance
observed near 48 MHz in the experiments. As shown in
Table V, the relative difference between computed and
measured values of the frequencies f , where Z el(f ) and
ψ(f ) have local minima or maxima, is about 2 % or less.
We also see that simulation also predicts the monotoni-
cally decreasing background signal for Z el(f ) before and
after the resonance relatively well for both an air- and
water-filled microchannel. However, the simulation fails
to predict the correct ratio of the resonance peak heights.
For the phase ψ shown in Fig. 3(c) and (d), the sim-
ulation predicts the resonance frequencies correctly, but
fails to predict the monotonically increasing background
(cid:18) V0
(cid:19)
I
ψ = arg
.
(17d)
B. Wall material: hard pyrex versus soft PDMS
Our previous device [23] features a soft PDMS polymer
lid, as is commonly used due to the ease of fabrication
and handling. However, the acoustic properties of PDMS
are far from ideal: its impedance is nearly equal to that
of water (20 % lower) and the attenuation is about two
orders of magnitude larger than that of the boundary
layer in water.
In the following, we therefore simulate
the acoustic properties of the device D1 with a PDMS lid
and contrast them with those of device D2 with a much
stiffer Pyrex lid, using the two models shown in Fig. 2 and
Table IV. Compared to water, the acoustic impedance of
Pyrex is 8.3 times larger and its attenuation 10 times
smaller.
res = 47.75 MHz and f D2
We study by numerical simulation the acoustic fields
of device D1 and D2 near the ideal (unloaded) frequency
fSAW = 49.9 MHz. By locating the maximum of the av-
erage acoustic energy in the water-filled channel plotted
versus the actuation frequency f (not shown), we deter-
mine the (loaded) resonance frequency fres of the two
devices to be f D1
res = 46.50 MHz,
respectively. In Fig. 4 we show line plots along the height
(z direction) and across the width (x direction) of numer-
ically simulated acoustic fields for these two devices.
In Fig. 4(a) and (b) is shown the magnitude uz of
the z component of the acoustic displacement u, which
in water is defined through acoustic velocity Eq. (7b) as
v1 = −iω u, along a vertical cut-line through the entire
device. In D1, uz has the characteristics of a traveling
wave emitted from the SAW substrate (maximum ampli-
tude), traversing the water with little reflection (a small
oscillation amplitude), and being absorbed in the PDMS
lid (decaying amplitude). In contrast, uz in D2 has the
characteristics of a standing wave localized in the wa-
ter channel with reflections from the surrounding solids:
huge oscillations in the water domain with minima close
to zero and an amplitude exceeding that in the emitting
substrate and the receiving lid. We also notice that in
the stiff Pyrex the attenuation is weak, and that the wave
is reminiscent of a standing wave between the water in-
terface below the lid and the air interface above. The
corresponding acoustic energy flux density Sac =(cid:10)p1v1
(cid:11)
in both systems is non-zero and predominantly vertical,
but with a much larger amplitude in D1 compared to D2.
In Fig. 4(c) is shown the the magnitude u of the
acoustic displacement u along horizontal cut-lines fol-
lowing the top (z = Hfl) and the bottom (z = 0) of
the water channel across the region containing the IDT.
In both devices the periodicity of the IDT electrodes is
9
away from the the IDT. Clear, p1 in the water channel of
D2 is dominated by reflections between the solid-water
interfaces. This observation can be quantified by the the
standing wave ratio, SWR = max(p1)/min(p1) that
describes the ratio of standing to traveling waves in a
given field. In an ideal resonator and an ideally trans-
mitting system, SWR = ∞ and 1, respectively. Here, we
find SWR(D2) = 12.7 and SWR(D1) = 1.3. These num-
bers underlines the good acoustic properties of the water-
Pyrex systems compared to the bad one of the PDMS
system. The ratio of the SWR numbers is 9.8, almost
equal to the impedance ratio 10.5, which emphasizes the
nearly perfect vertical energy flux density Sac discussed
above, as the impedance extracted from the properties of
a plane wave with a vertical incident on a planar surface.
C. Acoustophoresis
Whereas we have not made experimental validation
of the above simulation results for the acoustic fields
p1 and u, we compare in the following the experimen-
tally observed acoustophoretic motion at the SAW reso-
nance frequency fSAW of microparticle suspensions in the
water-filled microchannel, with that obtained by numeri-
cal simulation in our 2D model. The central experimental
and numerical results are shown in Fig. 5, in the left col-
umn for the PDMS-lid device D1 and in the right column
for the Pyrex-lid device D2. In the Supplemental Mate-
rial [50] are shown four animations of the acoustophoresis
in Fig. 5(c) and (g) of 0.1- and 1.7-µm-diameter particles
in device D1 and D2.
In Fig. 5(a) and (e) we observe that the suspended
1.7-µm-diameter particles in D1 focus on the edges of
the electrodes, whereas in D2 they mainly focus along
the center line of each electrode. This difference in
acoustophoretic focusing is caused solely by choice of lid
material and its thickness. Already in Fig. 4, we saw how
the change from the PDMS lid to the Pyrex lid led to a
change from a predominantly traveling wave, to a nearly
standing wave in the z direction. As a consequence, both
the pressure and its gradients in device D1 are smaller
than those in D2, and from Eq. (13b) follows that the
acoustic radiation force F rad changes significantly.
This change in F rad per particle volume, named f rad in
Eq. (13d), is shown as the vector and gray-scale plots for
device D1 and D2 in the right half of Fig. 5(b) and (f), re-
spectively. Compared to D2 having f rad = 7.4 pN/µm3,
the magnitude f rad = 0.4 pN/µm3 is 18 times smaller
in D1, and f rad is more smeared out (even smaller gra-
dients). Both force fields have a three-period structure
along the vertical z axis, reflecting that Hfl ≈ 3
2 cfl/fSAW.
In D1, the center of the force-field structure is displayed
relative to the center of the electrode, whereas in D2 it
is above the electrode center. Moreover, whereas f rad
has four less-marked, unstable nodal planes in D1 at
z/Hfl = 0, 1
3 , 1, it has three well-defined, stable ones in
3 , 2
The amplitude of the displacement u and the
FIG. 4.
pressure amplitude p1 in the PDMS-lid device D1 and in the
Pyrex-lid device D2 at their respective resonance frequencies
f D1
res = 47.75 MHz and f D2
res = 46.50 MHz at V0 = 1 V. (a) Line
plot of the z component uz along the vertical line x = Wel
(the center of the middle electrode) from the bottom of the
substrate (beige), through the water (blue), to the top of the
PDMS lid (green). (b) As in (a), but for the Pyrex-lid device
D2. (c) Line plot of u along the top (z = Hfl) and the bottom
(z = 0) of the channel in D1 (x < 0) and D2 (x > 0). The
dark gray and pink rectangles for −12 < x
< 12 represent
the IDT electrodes. (d) As in panel (c), but for p1 along the
horizontal lines at z/Hfl = 3
6 inside the channel.
6 , 1
λSAW
6 , 2
clearly seen, but the amplitude in the nearly-standing
wave case of D2 is 2-3 times larger than in the traveling
wave case of D1. Moreover, it is seen that the acous-
tic waves dies out faster in D1 than in D2 away from
the IDT region. The tiny oscillations in the PDMS lid
(green curve) for x < −12λSAW stems from the minute
transverse wavelength ∼ 11 µm = 0.13 λSAW in PDMS.
In Fig. 4(d) is shown the the magnitude p1 of the
acoustic pressure p1 in the water along the horizontal
cut-lines z/Hfl = 1
6 . Here the traveling versus stand-
ing wave nature of the two devices mentioned above,
is prominent: In D1, p1 is nearly independent of the
height, and its envelope amplitude is steadily decaying
from 90 to 55 kPa from the center to the edge of the IDT
region. In contrast, p1 has large amplitude fluctuations
as a function of the horizontal position x and for the
three vertical z positions. Moreover, p1 does not decay
6 , 3
6 , 2
10
FIG. 5. Microparticle acoustophoresis in experiments and in simulations for actuation frequency fSAW = 49.9 MHz and
driving voltage V0 = 4.35 V, rescaling the simulation from 1 to 4.35 V. (a) Top-view photograph (x-y plane) of the center
region of the IDT array in device D1, where suspended 1.7-µm-diameter fluorescent polystyrene particles (white) are focused
above the edge of each metal electrode (black). (b) Numerical simulations in the vertical x-z plane over a single electrode
pair (6λSAW < x < 7λSAW, the yellow line in panel (a)) in the fluid domain of device D1 with (to the left) a color plot of the
magnitude v2 [from 0 (blue) to 66 µm/s (yellow)] of the streaming velocity v2, and (to the right) a gray-scale plot of f rad
[from 0 (black) to 0.4 pN/µm3 (white)] of the acoustic radiation force density f rad. Superimposed are colored vector plots of
v2 [from 0 (blue) to 66 µm/s (red)] and of f rad [from 0 (blue) to 0.4 pN/µm3 (red)]. (c) Color-comet-tail plot of the simulated
acoustophoretic motion of 247 0.1-µm-diameter spherical polystyrene particles (to the left), superimposed on the gray-scale plot
of f rad from panel (b), 0.5 s after being released from initial positions in a regular 13×19 grid to the left of the green-dashed
centerline. Similarly for 1.7-µm-diameter particles to the right. The comet tail indicates the direction of the velocity with length
and color from 0 (dark blue) to 66 µm/s (orange) representing the speed. The percentages indicate the portion of particles
accumulating in these final positions: the blue set for a homogeneous initial particle distribution, and the purple set for an
inhomogeneous initial particle distribution created by 3 min of sedimentation. (d) Color plot in the vertical x-z plane below a
single electrode pair 5λSAW < x < 6λSAW of the numerically simulated electric potential V from −4.35 (light cyan) to 4.35 V
(purple) in the lithium niobate substrate. The width and x-position of the grounded and charged electrodes in the IDT-pair
are represented by the black (ge) and red (ce) rectangles, respectively. (e-h) Same as in (a-d) but for Pyrex-lid device D2, and
in (f) the gray-scale for v2 is from 0 (blue) to 76 µm/s (yellow) and f rad from 0 (black) to 7.4 pN/µm3 (white).
6 , 3
6 , 3
6 .
D2 at z/Hfl = 1
The corresponding streaming velocity field v2 in D1
and D2 is shown as the vector and color plots in the
left half of Fig. 5(b) and (f). The streaming appears
strikingly equal both in magnitude (66 µm/s for D1 and
76 µm/s for D2), shape and topology, but again with the
center of the pattern in D1 shifted slightly away from the
electrode center. The reason for this resemblance in v2
stems from the energy flux density Sac, which in both de-
vices points (nearly) vertically up along the z axis above
the electrodes, and is weak in between. As the (Eckart)
streaming is proportional to Sac [51], even in microcavi-
ties [36], the streaming moves upward due to Sac above
the electrodes and downward by recirculation between
the electrodes. Sac has nearly the same amplitude in D1
and D2 because, although the acoustic field in D2 is much
larger than in D1, it is mostly a standing wave with zero
energy flux density, and the little part that is a travel-
ing wave in D2 that carries the energy flux density, is
nearly of the same magnitude as the traveling wave that
constitutes the main part of the weaker acoustic field in
D1.
According to Newton's second law (13), the above-
mentioned properties of the acoustic radiation force den-
sity f rad and streaming velocity field v2 governs the ob-
servable acoustophoretic motion of suspended particles.
In Fig. 5(c) and (g), as well as in the Supplemental Ma-
terial [50], is shown the results of simulating such motion
for 0.1- and 1.7-µm-diameter polystyrene beads in both
D1 and D2, 0.5 s after starting from an initial homoge-
neous distribution (blue points and percentage numbers).
The motion of the large particles is dominated by the ra-
diation force [52], so the different focusing of these parti-
cles seen in the right half of Fig. 5(c) and (g) is explained
in terms of f rad: Because f rad has no stable nodal planes
in D1, all particles accumulate the floor or the ceiling of
the channel, and most of them (98 %) are pushed to the
regions above the electrode gaps as indicated by the vec-
tor plot in the right half of Fig. 5(c).
In contrast, the
stable nodal planes of f rad in D2, Fig. 5(g) right half,
guides 96 % of the particles into the three stable points
above the electrode center, with 41 %, 27 %, and 28 % at
z/Hfl = 1
6 = 0.83, respectively.
If we instead, as in the experiments described below, al-
low for a sedimentation time of 3 min before turning on
the acoustics, the distribution of the focused particles
changes to 58 %, 40 %, and 2 % at z/Hfl = 1
6 = 0.17,
3
6 = 0.50, and 5
6 = 0.83, respectively.
6 = 0.17, 3
6 = 0.50, and 5
The acoustophoretic motion of the small 0.1-µm-
diameter particles are dominated by the Stokes drag from
the streaming field v2, see the left side of Fig. 5(c) and (g)
and the videos in the Supplemental Material [50]. The
simulation shows that the particles do not settle in fixed
positions but follow oblong paths in the vertical plane
similar in shape to the large streaming rolls spanning the
entire height of the channel with an upwards motion over
the electrodes and downwards in between electrodes, see
Fig. 5(b) and (f). In D1, F rad is so small that it plays
essentially no role. In D2, however, F rad is stronger and
superposes with F drag to govern the acoustophoretic mo-
tion. This superposition of forces is similar to the analy-
sis presented by Antfolk et al. [19], but whereas in their
system the nanoparticles spirals towards the point at the
center of a single flow roll, the nanoparticles above a sin-
gle electrode in D2 are focused into the center line of each
of the two flow rolls shown in Fig. 5(f). The location of
these center lines are defined by the vertical and horizon-
tal nodal lines of f rad represented by the black regions at
the electrode gaps x/λSAW = n
2 and at the stable nodal
planes z/Hfl = 1
6 , 5
6 , respectively, in the gray-scale plot
of Fig. 5(f) and (g).
Most of these theoretical predictions are validated by
experiments. After loading the particle suspension in to
the device, it takes about 3 min for the fluid to come
to rest, during which time the 1.7-µm-diameter particles
11
sediment slowly. This partial sedimentation shifts the ho-
mogeneous particle distribution downwards, so that the
particle distribution is inhomogeneous when the acoustic
field is turned on. In the experiments on PDMS-lid device
D1, the large 1.7-µm-diameter particles are observed to
accumulate at the floor and the ceiling in the regions be-
tween the electrodes, and the small 0.1-µm-diameter par-
ticles are observed to circulate in broad streaming rolls.
In contrast, in the experiments on the Pyrex-lid device
D2, the large particle are seen to accumulate above the
center of the electrodes near two planes, 36 % of them at
z = (15 ± 5) µm = (0.3 ± 0.1)Hfl and 64 % of them at
z = (30 ± 5) µm = (0.6 ± 0.1)Hfl. Here, the uncertainty
is estimated from the optical focal depth in the setup.
These numbers are in fair agreement with the simulation
results mentioned above and shown in Fig. 5(g) (purple
numbers). Finally, the observed acoustophoretic focusing
time of 0.1 s matches the theoretical predictions.
VI. RESULTS OF THE 3D MODELING
In this section we address the more realistic, but also
more cumbersome simulations in 3D for the Pyrex-lid
device D2. Even given our access to the High Perfor-
mance Computing clusters at the DTU Computing Cen-
ter (HPC-DTU) [53], we cannot simulate the entire chip
shown in Fig. 1(a). Whereas we keep the correct dimen-
sions in the height, we scale down the width and length
to both be around 1 mm. The 3D model geometry is
shown in Fig. 6 with the detailed parameter values listed
in Table III. In this reduced geometry, the IDT contains
only 4 electrode pairs and no Bragg reflectors. Although
the model is down-sized in two of the three dimensions,
it still contains all the main components of a acoustoflu-
idic SAW device: A first step, in which the piezo-electric
device, the IDT electrodes, the elastic lid, and the mi-
crochannel with the fluid and its viscous boundary layer,
are combined in the calculation of the electrically induced
acoustic fields. A second step, in which the acoustic radi-
ation force and the acoustic streaming velocity are com-
puted, and used in the governing equation predict the
acoustophoretic motion of suspended spherical particles.
A. The acoustic fields and radiation force
The 3D model shown in Fig. 6 contains 4.6 million de-
grees of freedom. The calculation was distributed across
80 nodes on the HPC-DTU cluster and took 14 hours to
compute. The first result is that the computed pressure
and displacement fields p1 and u in 3D are both qualita-
tively and quantitatively similar to the ones computed in
the 2D model. For vertical slice planes parallel to the x-z
plane and place near the center of the IDT at y = 1
2 Lsl,
the agreement is of course better than for those near the
2 (Lsl ± Lel), but in all cases we
edge of the IDT near y = 1
find the period-3 structure of p1 along the z direction
12
FIG. 6. A 4.4 MDOF simulation of a mm-sized Pyrex-lid de-
vice D2 in 3D actuated at fSAW = 50 MHz. A surface plot of
the electric potential V [from −4.35 (purple) to 4.35 V (light
cyan), rescaled from V0 = 1 V] in the piezoelectric substrate,
combined with a slice plot at y = 1
2 Lsl of the acoustic pres-
sure magnitude p1 [from 0 (black) to 566 kPa (yellow)] in
the channel and the magnitude of the displacement u [from
0 (blue) to 0.05 nm (red)] in the surrounding Pyrex.
seen in Fig. 4(b). Likewise, for the acoustic radiation
force density, we recover the period-3 structure in f rad
seen in Fig. 5(f) and for the particle focusing points in
Fig. 5(g). The experimental observation of this vertical
focusing is thus validating this point in our 3D model.
B. The acoustic streaming rolls
The streaming-dominated,
in-plane acoustophoretic
motion of 0.75-µm-diameter particles suspended in the
device is used in Fig. 7 to compare our model predic-
tions to observed particle motion. As shown in Fig. 7(a),
the experimentally observed particle motion in Pyrex-lid
device D2 at the edges of the IDT electrodes is domi-
nated by streaming rolls in the horizontal x-y plane. We
compare this motion with the streaming velocity field v2
calculated using the 3D model and shown in Fig. 7(b).
Although the model only includes a mm-sized sub-region
of the experimental device, the same streaming pattern is
evident in both the model device and in the experimen-
tal device. The agreement in terms of direction, position,
and magnitude is good, albeit with small differences. In
both the simulation and in the experiment, the centers of
the streaming rolls are located at the edges of the elec-
trodes, with clockwise-circulating flows. Similar to the
2D streaming pattern in Fig. 5, the observed horizontal
streaming rolls are a combination of a recirculating flow
and an energy flux density, here perpendicular to and
away from the IDT array. The streaming velocity in D2
FIG. 7. Acoustic streaming in the horizontal x-y plane of
Pyrex-lid device D2.
(a) Experimental top view of device
D2 containing suspended 0.75-µm-diameter polystyrene par-
ticles (white), actuated at 50 MHz with V0 = 4.35 V. Arrows
(cyan) indicate the flow direction, and the blue dashed rect-
angle indicates the area shown in (b). (b) Colored arrow plot
of the simulated streaming velocity field v2 [from 0 (blue) to
66 µm/s (red)] in the 3D model actuated as in panel (a). The
black stripes represent the electrodes.
near the right edge of the blue rectangular region shown
in Fig. 7(a) and (b) is measured in the 24-electrode-pair
device to be ∼ 200 µm/s and in the simulated 4-electrode-
pair device to be ∼ 20 µm/s, or ∼ 120 µm/s if multiplied
by the ratio of the number of electrode pairs, 24/4.
VII. DISCUSSION
By comparing our model simulations to measurable
quantities, we find that the model can predict the over-
all electrical and acoustophoretic behavior of the two
types of SAW-devices D1 (PDMS lid) and D2 (Pyrex lid)
fairly well. For the electrical response of the device we
see a good agreement between the trends near resonance
of the predicted and measured values of the electrical
impedance, although the predicted values are obtained in
an ideal 2D model neglecting stray impedances. The pre-
dicted acoustophoretic focusing of the 1.7-µm-diameter
polystyrene particles at the ceiling and floor above the
edges of the electrodes in D1, and at 1/6 and 3/6 of the
channel height above the center of the electrodes in D2,
agrees well with experimental observations.
An interesting feature of the model is the three half-
wave resonance excited vertically in the Pyrex-lid device
D2.
It highlights the importance of careful considera-
tion of the material selection for acoustofluidic devices,
to fit with the desired purpose of the device. Because a
PDMS lid is an acoustically soft material with an acous-
tic impedance Z ac similar to that of water (Z ac
PDMS =
1.19 MRayl, Z ac
H2O = 1.49 MRayl), most of the energy in
an acoustic wave in water impinging on the water-PDMS
interface is transmitted into the PDMS, where it dissi-
pates into heat. Only a small fraction of the energy is
reflected back into the fluid. As illustrated in Fig. 4, by
replacing the PDMS lid of the device in Ref. [23] with an
acoustically hard (Z ac
Py = 12.47 MRayl) Pyrex lid, 78.6%
of the wave energy is theoretically reflected back into the
fluid domain at the channel lid, compared to the 10.9% in
a PDMS lid. The resonance build-up in the microchannel
is further enhanced, as the height of the channel sustains
three half-waves at the resonant frequency of the IDT,
fres = cSAW
. This resonance behavior is very
λSAW
similar to the integer-half-wave resonances common in
BAW devices, whereas the beneficial energy localization
at the surface of the SAW is still retained. Thus, the
energy loss and heat generation occurring in the piezo-
electric substrate in BAW devices is mitigated in this
device whereas strong microchannel resonances can be
achieved, when using a Pyrex lid in an IDT-inside SAW
design. Considering this the terms 'BAW' and 'SAW'
seem inadequate when describing acoustofluidic devices,
as the actuation scheme of the piezo-electric transducer
alone does not suffice to describe the resonance behavior
of a device. A more descriptive feature of a device is the
nature of the wave field in the fluid, because we show the
main factor determining acoustophoresis in the SAW is
the difference between traveling and standing wave fields
in the fluid.
= cfl
3λWa
In acoustofluidic focusing devices, a strong streaming
flow is often detrimental to the desired application, as
they tend to counteract the radiation force by pulling
small particles away from the nodes. In the Pyrex-lid de-
vice, however, the vertical part of the streaming enhances
particle focusing, as it pulls particles from areas with
weak radiation force into the lower node of the acoustic
radiation force, increasing the focusing efficiency.
VIII. CONCLUSION
We have presented a 3D model, and implemented it in
the finite-element software COMSOL Multiphysics, for
numerical simulation of SAW-devices taking into account
the piezo-electric substrate, the IDT metal electrodes,
the elastic solid defining the microchannel, the water in
the microchannel as the viscous boundary layer of the
water. With such simulations, we are able to decrease the
gap between the systems that we can model and those
used in actual experiments. This work thus brings us
closer to the point, where numerical simulation can guide
13
rational design of acoustofluidic devices.
To push acoustofluidic devices closer to medical ap-
plication, the development of novel device designs be-
yond the proof-of-concept stage is vital. We have pre-
sented a close-to-scale numeric model of an acoustofluidic
SAW device by expanding on previous model experiences
[32, 36] and the recently developed effective-boundary-
layer theory [43]. With this we have captured the inner
workings of a non-trivial device. The model includes the
linear elasticity of the defining material, the scalar pres-
sure field of the microchannel fluid and the piezoelectric-
ity of the lithium niobate substrate.
Using the numeric model, we illustrate the impact
that the material selection in acoustofluidic chips has on
acoustophoretic performance. Based on the numerically
predicted acoustic fields, we propose design improve-
ments over the previous design [23], consisting primarily
of substituting the original PMDS lid with a Pyrex lid.
According to our model, the new lid leads to higher en-
ergy densities and more uniform particle focusing. This
causes the chip to build up strong resonances in a stand-
ing wave field, similar to those in a BAW device. Fur-
thermore, we have used our model to predict the elec-
trical response of the a 2D model of the system, the
acoustophoretic focusing of particles suspended over the
IDT area of the device, and the streaming motion within
devices. For each of these comparison parameters we
have found an agreement between predictions and exper-
iments.
Despite our focus on a specific device design in this
manuscript, the model can handle a much wider class of
acoustofluidic devices. We have a developed a model that
can be reshaped to simulate any BAW or SAW device de-
sign of well-characterized piezoelectric transducers, New-
tonian fluids, and isotropic and anisotropic linear solids.
In future work it would be prudent to improve the
model accuracy by including the temperature field to ac-
count for the thermal dependence of material parame-
ters, particularly the fluid bulk and dynamic viscosities.
To implement the temperature field one must account
for the various sources of thermal generation in terms
of mechanical losses and viscous dissipation described in
[54], which requires a good knowledge of the damping
properties of each component of the device.
IX. ACKNOWLEDGEMENTS
This work is partially supported by NSF CBET-
1605574, NSF CBET-1804963,
and NIH PSOC-
1U54CA210184-01. The device fabrication is performed
in part at the Cornell Nanoscale Facility (CNF), which
is supported by the National Science Foundation (Grant
ECCS-1542081).
14
In the following, we define the matrix operations nec-
essary to determine the material parameters in the global
system x, y, z from the values known in X, Y, Z.
In the usual Cartesian notation exists a matrix R
transforming a 3×1 vector P mt expressed in material co-
ordinates X, Y, Z to the vector P gl expressed in terms of
a global coordinate system x, y, z.
P gl = RP mt,
(A1)
whereas 3×3 matrices are transformed as
−1.
εgl
r = Rεmt
r R
(A2)
For 6×1 vectors in Voigt notation similar matrices
called Bond matrices Ms transform stress vectors σmt
V
expressed in material coordinates into the same stress in
terms of the global coordinate system σgl
V
V = Mσσmt
σgl
V ,
(A3)
and similarly to Eq. (A2) 6×6 matrices are transformed
as
cgl
r = Mσcmt
r M T
σ
(A4)
It is important to note that Voigt notation stress and
strain vectors do not transform alike and two transforma-
tion matrices exist in Voigt notation Mσ (cid:54)= M. Hence,
the transformation rules deviate slightly from those in
3×3 matrices.
Finally, 3×6 matrices such as the coupling tensor, e
can be transformed using a rotation matrix and Bond
matrix.
r = Remt
egl
r M T
σ
(A5)
Mathematically, a positive rotation θ degrees about
the material X-axis is obtained by the rotation Rx(θ)
and Bond Mσ,x(θ) matrices
1
Rx(θ) =
Mσ,x(θ) =
,
0
0
0 C S
0 −S C
1
0
0
0
S 2
C2
2CS
0
0 S 2
C2 −2CS
0 −CS CS C2 − S 2
0
0
0
0
0
0
0
0
(A6)
(A7)
,
0
0
0
0
0
0
0
0
C S
−S C
using C and S as shorthand for cos(θ) and sin(θ) respec-
tively.
FIG. 8.
(a) Top-view sketch of the material coordinate sys-
tem X, Y, Z in mono-crystalline, hexagonal lithium niobate
with three mirror planes m.
YX-cut lithium nio-
bate chip showing the global coordinate system x, y, z rotated
counter-clockwise θ = 128
around the X-axis
relative to the material coordinate system X, Y, Z.
◦
(b) 128
◦ − 90
◦
= 38
◦
Appendix A: Bond and rotation matrices
◦
The elasticity, coupling and permittivity properties of
mono-crystalline lithium niobate are listed in Ref. [38]
for a Cartesian material coordinate system X, Y, Z de-
fined as shown in Fig. 8(a). The Z-axis is oriented in
the growth direction, the X-axis is the normal to one of
the three mirror planes, and the Y -axis follows from the
right-hand rule, placing it within the mirror plane the X-
axis is normal to. The device in this manuscript, however,
is manufactured on a wafer of the more commonly used
128
YX-cut lithium niobate. These are wafers of lithium
niobate cut from a single crystal so that the positive sur-
face normal forms a 128
angle with the material Y -axis.
In our model, we define a coordinate system x, y, z with
the x-axis coinciding with the material X-axis, the z-axis
normal to the wafer surface and the y-axis determined
by the right-hand rule. This global coordinate system
coincides with the material coordinate system rotated an
angle θ = 128
counter-clockwise around the
X-axis, as shown in Fig. 8(b).
◦ − 90
◦
= 38
◦
◦
15
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|
1808.09838 | 1 | 1808 | 2018-08-29T14:01:10 | Synthesizing Cu-Sn nanowires alloy in highly-ordered Aluminum Oxide templates by using electrodeposition method | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | In this research a novel and simple electrochemical method is developed in order to facilitate the large-scale production of nanowires. The proposed electrochemical technique shows versatile controllability over chemical composition and crystalline structure of Cu-Sn nanowires. Another important factor, which could be controlled by using this method, is the order structure of nanowires more accurately in comparison to conventional synthesizing procedures. As a result, the Cu-Sn nanowires as well as Aluminum Oxide templates synthesized by using the proposed electrochemical method are examined due to their morphology and chemical structure to find a relation between electrodeposition's solution chemistry and materials properties of Cu-Sn nanowires. The results show that the proposed electrochemical method maintains a highly-ordered morphology as well as versatile controllability over chemical composition of nanowires, which could be used to optimize the procedure for industrial applications due to low cost and simple experimental setup. | physics.app-ph | physics | Synthesizing Cu-Sn nanowires alloy in highly-ordered Aluminum
Oxide templates by using electrodeposition method
Mastooreh Seyedia,∗, Mozhdeh Sabab
aDepartment of Materials Science and Engineering, Clemson University, 161 Sirrine Hall, Clemson, SC
bDepartment of Polymer Engineering and Color Technology, Amirkabir University of Technology, Tehran,
29634, USA
Tehran, Iran
Abstract
In this research a novel and simple electrochemical method is developed in order to fa-
cilitate the large-scale production of nanowires. The proposed electrochemical technique
shows versatile controllability over chemical composition and crystalline structure of Cu-Sn
nanowires. Another important factor, which could be controlled by using this method, is
the order structure of nanowires more accurately in comparison to conventional synthesizing
procedures. As a result, the Cu-Sn nanowires as well as Aluminum Oxide templates synthe-
sized by using the proposed electrochemical method are examined due to their morphology
and chemical structure to find a relation between electrodeposition's solution chemistry and
materials properties of Cu-Sn nanowires. The results show that the proposed electrochemical
method maintains a highly-ordered morphology as well as versatile controllability over chem-
ical composition of nanowires, which could be used to optimize the procedure for industrial
applications due to low cost and simple experimental setup.
Keywords: Cu-Sn nanowires, Highly-ordered Aluminum Oxide, Electrodeposition, AC
electrochemical deposition, Self-assembled templates
1. Introduction
Tin (Sn) based anodes are rigorously studied in order to increase the Li-ion batteries'
capacities [1 -- 22]. Although, large volumetric strains, during Li+ insertion/extraction, could
lead to mechanical failure of anodes and reduce the cyclability of Lithium-ion batteries [23 --
25]. As a result, alloying the anode material (i.e. Sn) with mechanically stable elements
(e.g. Ni, Co, Cu, graphene, etc.) method is developed in order to achieve promising cycling
performance and utilizing the higher capacity of Tin (Sn) simultaneously [1 -- 3, 6, 12, 15].
Furthermore, nanostructured version of these Tin based alloys (e.g. nanowires, nanopar-
ticles, etc.) could stabilize the volumetric strains more effectively, because of their small
∗Corresponding author: Mastooreh Seyedi Department of Materials Science and Engineering, Clemson
University, 161 Sirrine Hall, Clemson, SC 29634, USA Email: [email protected] Phone: 1-864-624-2838
Preprint submitted to Elsevier
August 30, 2018
8
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0
2
g
u
A
9
2
]
h
p
-
p
p
a
.
s
c
i
s
y
h
p
[
1
v
8
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8
9
0
.
8
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:
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r
a
volume changes in comparison to thin films [26]. Although, synthesizing the nanostructures
in large volume for industrial applications is challenging due to their expensive and time
consuming production methods, such as: surfactant based techniques or self-assembling of
0D nanostructures [27 -- 29]. However, electrodeposition methods (e.g. direct or alternating
current techniques) have shown more accurate controllability over materials morphology
and chemical composition of nanostructures in comparison to conventional production tech-
niques as well as their easier scalability for industrial applications [30 -- 32]. Electrodeposition
of metallic alloys in the ordered self-assembled templates (e.g. Al2O3, TiO2, porous poly-
carbonate, etc.) is developed primarily to control the morphology of nanostructures [33 -- 37].
The main disadvantage of conventional direct current electrodeposition methods in order to
synthesize nanostructures in self-assembled templates, is the practical difficulties of produc-
ing a conductive self-assembled structure due to low conductivity of templates' materials
[38 -- 51]. On the other hand, alternating current (AC) electrochemical deposition method is
primarily developed to overcome the technical difficulties, related to removing the barrier
layer of the anodic Aluminum Oxide (AAO) and coating this self-assembled template with
conductive materials [52]. As a result, the AC electrodeposition technique has a potential to
facilitate the industrial scale production of nanostructures with a highly controlled morphol-
ogy as well as their chemical structure [34]. In this research, AC electrochemical deposition
method has been deployed to synthesize highly-ordered Cu-Sn nanowires in Aluminum Ox-
ide templates. In the first section of this research paper, two steps anodization technique,
which is used to produce a highly-ordered template, as well as its morphological properties
will be discussed in details. Then morphological properties as well as chemical structure
of synthesized Cu-Sn nanowires will be investigated in order to examine their crystalline
structures as well as controllability of nanowires' chemical composition. All the experiments
in this research are done at room temperature, which facilitates its generalization for indus-
trial scale applications due to technical difficulties related to costly temperature controlling
systems [53].
2. Materials and methods
2.1. Two step anodizing
Before anodizing of planar Aluminum samples (Merck KGaA, 99.95%, 0.3 mm thickness
- annealed), electrodes are electropolished (A = 1cm2) in HClO4 60 wt. % solution.
In
fact, the electropolishing voltage and temperature are fixed at 2 V and room temperature
(25◦C) respectively. Also, the electropolishing time is optimized at 5min in order to achieve
a highly smooth surface without primary amorphous Aluminum Oxide. In both the first
and second steps of anodization procedure, the electrodes are anodized in C2H2O4 0.3M
solution. Furthermore, anodization time, voltage, and temperature are fixed at 2h, 40 V and
room temperature (25◦C) respectively for first and second steps of this anodizing procedure.
Synthesized porous Aluminum Oxides after the first step of anodization are etched in a
solution of 0.6M H3PO4 85 wt. % - 0.2M H2CrO4. The etching temperature and time are
fixed at 60◦C and 30min respectively. The main challenge, in order to use Aluminum Oxide
templates for electrodeposition purposes directly, is how to reduce the electrical resistance
2
of Al2O3 barrier layer, which prevents the electrical current flow through the thick insulative
layer at the bottom of the pores (i.e. barrier layer) [54 -- 58]. In this research, the barrier layer
thinning (BLT) procedure (i.e. reducing the second step anodization voltage gradually),
which is shown as a voltage-time plot in fig. 1 schematically, is used to reduce the electrical
impedance of the Aluminum Oxide layer at the bottom of the pores. Additionally, the
electrical impedance of the electrodes, before and after BLT procedure, are examined by
using impedance spectroscopy.
2.2. AC nanowire electrodeposition
The AC electrochemical deposition technique is employed to reduce Cu2+ and Sn2+ ions
in the pores of self-assembled Aluminum Oxide template.
In all the experiments of this
section, pH as well as Boric acid (H3BO3) concentration, root mean square (RMS) voltage,
and AC signal's frequency are fixed at 1, 0.5M, 10 V, and 200 Hz respectively. As a result,
10 samples are prepared to investigate the effect of Tin Sulfate (SnSO4) concentration on the
chemical composition of produced nanowires. The SnSO4 concentration is changed from 0
to 0.5M and chemical composition as well as crystalline structure of deposited nanowires are
examined by using energy dispersive spectroscopy (EDS) and X-ray diffraction respectively.
2.3. Materials characterization
Samples' characterization, which was used to investigate morphology of self-assembled
templates as well as Cu-Sn nanowires, was done with a field emission scanning electron mi-
croscope (FE-SEM) Quanta 3D FEG (FEI, Phillips, The Netherlands). In order to examine
the pore sizes as well as morphology (i.e. order structure) of nanowires, ImageJ [59] image
processing software is used to obtain quantitative information on the average diameter of
the self-assembled templates' pores' diameter and length, as well as diameter of the elec-
trodeposited Cu-Sn nanowires. The crystalline structure of the Cu-Sn nanowire alloy was
analyzed by X-ray diffraction using a Rigaku Ultima IV diffractometer with Co K radiation
and operating parameters of 40 mA and 40 kV with a scanning speed of 1◦ per minute
and step size of 0.02◦. Finally, the impedance spectroscopy of the anodized samples were
done by using a MultiPalmSens4 potentiostat in order to compare the electrical resistance
of anodizied samples before and after barrier layer thinning procedure.
3. Results and discussion
3.1. Aluminum Oxide morphology
The porous morphology of two steps anodized Aluminum Oxide is shown in fig. 2. Ac-
cording to fig. 2(a), which is analyzed by using image processing techniques, it could be
understood that the average pore size of this self-assembled template is 60 nm. Furthermore,
the order structure of this porous medium is analyzed by using the fast Fourier transform
(FFT) technique in order to examine the spatial structure of pores and their deviation from
honeycomb structure. As a result, according to fig. 2(b), the FFT result of this AAO mi-
crostructure shows 6 strong bright dots, which indicates that a perfect honeycomb structure
3
is achieved after the second step of anodization. Additionally, in order to examine the as-
pect ratio of self-assembled pores of AAO, a cross-sectional FE-SEM microscopy is done to
estimate the thickness of Aluminum Oxide after the second step of anodization (cref. fig. 3).
As shown in fig. 3(a), the thickness of AAO template is about 33 µm. As a result, the aspect
ratio of pores, which is defined as the ratio of thickness over diameter, could be estimated as
550. Also, this aspect ratio will be increased for nanowires after AAO dissolution because of
nanowires' radial shrinkage due to compressive residual stresses [60, 61]. The wall thickness
of pores in self-assembled AAO template is estimated as 60 nm, which is shown in fig. 3(b).
This highly ordered structure after the second step of anodization is achieved because: the
quantum dots are created on the electrode's surface after etching step, which could facilitate
the directional growth of AAO as well as controlling of its diameter more precisely [62].
3.2. Impedance spectroscopy of Aluminum Oxide template's barrier layer
Impedance spectroscopy is done in order to examine the electrical resistance of barrier
layer before and after the thinning procedure. Additionally, the impedance of barrier layer
directly could be related to its thickness as [63, 64]:
1
Z =
dbl =
(jω)aCbl
r0S
Cbl
(1)
(2)
√−1 is the imaginary unit, ω is the frequency,
Where Z is the electrical impedance, j =
a is frequency scattering factor, Cbl is the barrier layer capacity, dbl is the barrier layer
thickness, r is the relative electrical permittivity, 0 is the electrical permittivity of vacuum,
and S is the surface area of the sample. The impedance magnitude versus frequency and its
real part versus imaginary part (Nyquist plot) for before and after the barrier layer thinning
procedure are shown in fig. 4(a) and fig. 4(b) respectively. The equations 1 and 2 are used to
fit them into the Nyquist plots (cref. fig. 4) and as a result, the obtained values for barrier
layer thicknesses before and after BLT procedure are 20nm and 5nm respectively. This
calculation shows that the BLT procedure reduced the barrier layer thickness 4 times smaller,
which could increase its conductivity and facilitate the AC electrochemical deposition step.
Additionally, the electrical circuits equivalence of the Nyquist plots are extracted due to the
fitted parameters which are shown in fig. 5. According to these electrical circuits, it could
be understood that the second resistance/capacitance pair remained constant before and
after BLT procedure. However, the electrical resistance of first resistance/capacitance pair
is reduced by three orders of magnitude, which shows the electrical resistance is reduced
after BLT procedure significantly (cref. fig. 5).
3.3. Cu-Sn nanowires
FE-SEM microscopy technique is used to investigate the morphology of Cu-Sn nanowires
after dissolution of AAO template in 1M NaOH solution.
In fig. 6, Cu-Sn nanowires
are shown in two different resolutions, which show their long-range order structure (cref.
4
fig. 6(a)) as well as the diameter of the nanowires (cref. fig. 6(b), 25 nm). As a result,
according to fig. 6(b), it could be understood that the aspect ratio of the nanowires are
increased by a factor of 2, which could increase their surface to volume ratio as well as
their chemical reactivity for practical applications. Also, the EDS and X-ray diffraction
techniques are used to examine the chemical composition and crystalline structure of Cu-Sn
nanowires respectively (cref. fig. 7). According to fig. 7(a), there are some residual Al2O3
due to presence of Aluminum and Oxygen peaks. These residual Aluminum Oxide could be
eliminated by increasing the AAO template dissolution time. Additionally, due to fig. 7(b),
it is shown that the cystalline structure of nanowires is a mixture of unreacted crystalline
Sn and η−Cu6Sn5 intermetallic compound. Due to conventional DC electrochemical depo-
sition procedures, the growth of intermetallic compounds needs a post heat treatment step
to facilitate the re-nucleation and growth of crystalline structures [65 -- 73]. As a result, the
observed intermetallic compound (η−Cu6Sn5, cref. fig. 7(b)) in Cu-Sn nanowires could be
justified due to increasing the temperature during AC electrochemical deposition because of
the high resistivity of pores' walls. In fact, the electrical current flow chose the low resistance
pathway through the barrier layer in order to reduce Copper and Tin ions, but the excess
amount of electrical current flow through pore wall pathway will generate local thermal en-
J2
σ . where e is the thermal energy, J is the electrical current density vector, and σ
ergy (e =
is the electrical conductivity), which causes local heat treatment of the amorphous mixture
of Copper and Tin [74]. Furthermore, η−Cu6Sn5 intermetallic compound shows promising
higher efficiency in Lithium-ion batteries [75]. As a result, this AC electrochemical de-
position technique could be optimized to eliminate the unreacted Sn in the nanowires by
controlling the voltage, frequency, and chemical composition of the solution. Additionally,
by using EDS results, it is possible to find a direct relation between the solution chemistry
and the nanowires chemical composition, which could be used to optimize this AC electro-
chemical deposition procedure aiming to maximize the amount of η−Cu6Sn5 intermetallic
compound and efficiency of Lithium-ion batteries. Hence, the solution and nanowires chem-
ical compositions of 10 samples (swept SnSO4 concentration from 0 to 0.5M) are tabulated
in table 1.
The experimental data as well as the linear fitted equation for the relation of the solution
and nanowires chemical compositions are plotted in fig. 8. As a result, the final fitted
equation which could relate the chemical composition of solution with nanowires structure,
is obtained as:
wt.Sn ∈ N W s = 0.95 × wt.Sn ∈ Solution + 1.6
(3)
This relation (cref. equation 3) could be used to optimize the chemical composition as
well as crystalline structure of Cu-Sn nanowires and ultimately increase the efficiency of
Lithium-ion batteries.
5
4. Conclusions
In this research, an AC electrochemical deposition technique is developed, which could
be easily used to synthesize metallic nanowires with highly-ordered structure and reasonable
controllability over the chemical composition as well as the crystalline structure. Addition-
ally, this technique could facilitate the large-scale production of nanostructures due to the
in-situ heat treatment of nanowires as well as the room temperature operating environment.
As a result, this technique could be generalized to develop industrial scale coating facilities,
which could be used in Lithium-ion battery production as well as other industries, such
as: biomedical applications [76 -- 79], oil and gas extraction plants [80 -- 82], and nanoparticles
technologies [83]. Finally, these Cu-Sn nanowires' production technique should be optimized
by using the proposed electrochemical synthesizing procedure, and be examined in assem-
bled Lithium-ion batteries to accurately measure their capacity as well as efficiency in order
to achieve higher cyclability.
6
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13
List of Figures
1
2
3
4
5
6
7
8
Schematical representation of barrier layer thinning procedure, which shows
decreasing the voltage to reduce the electrical impedance of Aluminum Oxide
layer at the bottom of the pores.
. . . . . . . . . . . . . . . . . . . . . . . .
Pore size distribution and FFT result of AAO template after two step an-
odization procedure.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thickness and pore wall estimation of AAO template, which could be used
17
to calculate the aspect ratio of self-assembled pores. . . . . . . . . . . . . . .
Effect of BLT procedure on Nyquist plots of AAO template.
18
. . . . . . . . .
Electrical circuits equivalence of Nyquist plots before and after BLT procedure. 19
FE-SEM microscopy images of Cu-Sn nanowires after AAO template disso-
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
lution.
EDS and X-ray diffraction spectra of Cu-Sn nanowires.
. . . . . . . . . . . .
Experimental data and linear fitted equation for chemical compositions of
solution and nanowires of 10 samples. . . . . . . . . . . . . . . . . . . . . . .
20
21
22
15
16
14
Figure 1: Schematical representation of barrier layer thinning procedure, which shows decreasing the voltage
to reduce the electrical impedance of Aluminum Oxide layer at the bottom of the pores.
15
(a) Pore size distribution of AAO template.
(b) FFT result of AAO template, which shows
perfect honeycomb structure due to 6 bright dots
in its FFT spectrum.
Figure 2: Pore size distribution and FFT result of AAO template after two step anodization procedure.
16
(a) Thickness estimation of AAO template.
(b) Pore wall estimation of AAO template.
Figure 3: Thickness and pore wall estimation of AAO template, which could be used to calculate the aspect
ratio of self-assembled pores.
17
(a) Impedance magnitude versus frequency for
before and after BLT procedure.
(b) Imaginary part versu real part of impedance
plot (Nyquist plot) for before and after BLT pro-
cedure.
Figure 4: Effect of BLT procedure on Nyquist plots of AAO template.
18
(a) Electrical circuit of Nyquist plot before
BLT procedure.
(b) Electrical circuit of Nyquist plot after
BLT procedure.
Figure 5: Electrical circuits equivalence of Nyquist plots before and after BLT procedure.
19
(a) Long-range
nanowires after AAO template dissolution.
structure
order
of Cu-Sn
(b) Diameter estimation of Cu-Sn nanowires in
order to estimate their aspect ratio.
Figure 6: FE-SEM microscopy images of Cu-Sn nanowires after AAO template dissolution.
20
(a) EDS spectrum of Cu-Sn nanowires, which shows their chemical composition.
(b) X-ray diffraction spectrum of Cu-Sn nanowires as well as their crystalline struc-
tures.
Figure 7: EDS and X-ray diffraction spectra of Cu-Sn nanowires.
21
Figure 8: Experimental data and linear fitted equation for chemical compositions of solution and nanowires
of 10 samples.
22
List of Tables
1
Chemical compositions of solution and nanowires obtained from EDS. . . . .
24
23
Sample No.Sn wt. % in solutionSn wt. % in nanowires
1
2
3
4
5
6
7
8
9
10
0
17.19
31.84
44.46
55.46
65.13
73.70
81.34
94.39
100
0
23.21
30.69
42.52
51.66
60.03
72.76
80.05
87.58
100
Table 1: Chemical compositions of solution and nanowires obtained from EDS.
24
|
1904.01652 | 1 | 1904 | 2019-04-02T20:22:25 | Focused Electron and X-ray Beam Crosslinking in Liquids for Nanoscale Hydrogels 3D Printing and Encapsulation | [
"physics.app-ph",
"cond-mat.soft"
] | Additive fabrication of biocompatible 3D structures out of liquid hydrogel solutions has become pivotal technology for tissue engineering, soft robotics, biosensing, drug delivery, etc. Electron and X-ray lithography are well suited to pattern nanoscopic features out of dry polymers, however, the direct additive manufacturing in hydrogel solutions with these powerful tools is hard to implement due to vacuum incompatibility of hydrated samples. In this work, we resolve this principal impediment and demonstrate a technique for in-liquid hydrogel 3D-sculpturing separating high vacuum instrumentation and volatile sample with ultrathin molecularly impermeable membranes transparent to low-energy electrons and soft X-rays. Using either scanning focused electron or synchrotron soft X-ray beams, the principle of the technique, particularities of the in-liquid crosslinking mechanism and factors affecting the ultimate gel feature size are described and validated through the comparison of experiments and simulations. The potential of this technique is demonstrated on a few practical examples such as encapsulation of nanoparticles and live-cell as well as fabrication of mesoscopic 3D-hydrogel structures via modulation of the beam energy | physics.app-ph | physics | Focused Electron and X-ray Beam Crosslinking in Liquids for
Nanoscale Hydrogels 3D Printing and Encapsulation
Tanya Gupta1,2, Evgheni Strelcov1,2, Glenn Holland1, Joshua Schumacher1, Yang Yang1, Mandy Esch1,
Vladimir Aksyuk1, Patrick Zeller3, Matteo Amati3, Luca Gregoratti3, and Andrei Kolmakov1*
1 NIST, Gaithersburg, MD 20899, USA;
2 Maryland NanoCenter, University of Maryland, College Park, MD 20742, USA;
3 Sincrotrone Trieste 34012 Trieste, Italy
*e-mail: [email protected]
Abstract
Additive fabrication of biocompatible 3D structures out of liquid hydrogel solutions has become pivotal
technology for tissue engineering, soft robotics, biosensing, drug delivery, etc. Electron and X-ray lithography
are well suited to pattern nanoscopic features out of dry polymers, however, the direct additive manufacturing
in hydrogel solutions with these powerful tools is hard to implement due to vacuum incompatibility of hydrated
samples. In this work, we resolve this principal impediment and demonstrate a technique for in-liquid hydrogel
3D-sculpturing separating high vacuum instrumentation and volatile sample with ultrathin molecularly
impermeable membranes transparent to low-energy electrons and soft X-rays. Using either scanning focused
electron or synchrotron soft X-ray beams, the principle of the technique, particularities of the in-liquid
crosslinking mechanism and factors affecting the ultimate gel feature size are described and validated through
the comparison of experiments and simulations. The potential of this technique is demonstrated on a few
practical examples such as encapsulation of nanoparticles and live-cell as well as fabrication of mesoscopic 3D-
hydrogel structures via modulation of the beam energy
1
Hydrogels are a wide class of natural and synthetic hydrophilic porous polymeric scaffolds that can retain
a high volume fraction of water, are biocompatible1 (e.g. poly(ethylene glycol (PEG)-based) and therefore
became particularly important for numerous biomedical applications such as extracellular matrix in
regenerative medicine, cell transplantations, wounds healing and tissue engineering (see recent reviews2-5
and references therein). Facile tunability of type and strength of hydrogel chemical bonds, network mesh
size, optical, electrical, mechanical and chemical properties is another factor that makes gels highly
perspective for biosensing6, self-healing coatings7, and soft robotics8. In addition, formulation of the
composite or hybrid hydrogels9, where the hydrogel is blended with different types of responsive
nanoparticles, polymers or molecules/ions further augments their physicochemical functionalities critical
for drugs delivery10,11, antimicrobial coatings12, batteries materilas13, and nanofabrication14. Depending on
the chemical composition, molecular weight and application of hydrogels, several different triggering
agents have been traditionally used for their controlled crosslinking, the major ones being: thermal, photo-
, and chemical curing15. Modern engineering of 3-dimensional (3D) hydrogel constructs with diffraction
limited resolution has immensely benefited from advancements in holographic16 and additive fabrication
approaches using fast photo-induced curing, administered either via diffused or focused laser beam
irradiation. Lately, formulation of special photoinitiators for multiphoton laser polymerization being
coupled with super-resolution irradiation schemes 17-20 have drastically improved the gel writing resolution
to sub 100 nm level as well as the versatility of this method. However, the very low cross-section for multi-
photon polymerization and as a result long writing time and potential cytotoxicity of concentrated
photoinitiators remain to be impediments for rapid biocompatible 3D hydrogel printing. Alternatively,
diffuse γ-, hard X-rays, high energy electron, proton radiations have been widely employed for crosslinking
and patterning in the bulk of hydrogel solutions since 1960-s (see reviews 21,22 and references therein).
Electron beam lithography, on the other hand, employs a highly focused few nanometers wide electron
beam with relatively low energies (1-30) keV and has been successfully used to pattern dry 50-200 nm
thick gel films with sub-100 nm accuracy23-26. However, high vacuum requirements and therefore solvent-
free hydrogels for e-beam writing impede the use of this high-resolution technique for layer-by-layer
additive manufacturing. Similarly, the great potential of X-rays for controlled gel polymerization inside
live systems27, particles encapsulations28 and high aspect ratio structures fabrication29 have been
demonstrated, however, in spite of routinely achievable sub 100 nm resolution in scanning X-ray
microscopes in liquid gels30, no 3D hydrogel patterning in solution with soft X-rays focused beam has been
reported yet.
In this work, we introduce a versatile approach to perform focused electron and X-ray beams
induced polymerization inside hydrogel solution through ultrathin electron transparent molecularly
impermeable membranes separating high vacuum equipment from the vacuum incompatible liquid. Using
this method, we were able to perform 3D gel (micro-)printing, cell immobilization and nanoparticle
encapsulation inside a liquid solution in a continuous process flow. We define the range of the experimental
parameters determining the printing resolution and gel feature sizes and show that the diffusion of radiolitic
radicals needs to be invoked to explain the observed systematic differences between model predictions and
experimentally obtained feature sizes. We further demonstrate the versatility of the approach by using
focused soft X-rays with variable photon energies gel crosslinking with chemical and spatial selectivity and
discuss the key similarities and differences in 3D gel patterning mechanism between electrons and soft X-
rays.
Experimental
To deliver focused electron or soft X-ray beams to liquid solutions and for patterning / imaging in liquids
we adopted WETSEM31 (also called liquid cell scanning electron microscopy32 (LSEM)) methodology and
employed custom made (micro-)fluidic or closed chambers equipped with 30 nm to 50 nm thin electron /
soft X-ray transparent SiN membranes to isolate the liquid solution from the vacuum of the microscope
(Figure 1 (a) for electrons and Figure 1 (b) for X-rays).
2
Figure 1. a) Liquid cell SEM (LSEM) setup for site-specific in-liquid hydrogel curing. High vacuum (HV) of the microscope is
protected with an electron (e-) transparent membrane. b) Hydrogel curing in the liquid phase using zone plate (ZP) based soft-X
ray optics. OSA stands for order sorting aperture; c) the principle design and parts of the liquid sample chamber used in this study;
d) 3D-surface plot of an optical image of gel structures electron beam printed on the liquid-facing side of selected six SiN windows
Figures 1c, d demonstrate the experimental setup used in this study for electron focused beam induced
curing of liquid gels. The chamber for X-ray studies contained enclosed hydrogel solution and was smaller
in size. Both types of chambers were equipped with SiN/Si chip patterned with an array of nine 100 µm
x100 µm wide and 50 nm thick SiN suspended membranes. This single-use exchangeable SiN/Si chip is
vacuum sealed against the body of the fluidic (or enclosed) cell and the interior of the chamber was filled
with Poly(ethylene glycol) Diacrylate (PEGDA) aqueous solution. Nine SiN membrane windows are
capable to withstand 1 Bar pressure differential between the liquid sample and high vacuum environments
of the microscope and were used for comparative feature writing and combinatorial data collection from
multiple windows within a single experiment (Figure 1 (d)). As an example, the arrays of rectangular and
fine linear structures were printed on individual membrane windows varying one of the parameters: beam
energy, irradiation intensity, step-size size and dwell time at the time. After washing out a solution with
water, the dimensions of the crosslinked stable gel structures were then inspected in a hydrated state using
AFM and optical profilometry and more precisely in a dry state using SEM. Comparing the height of the
same objects in their hydrated and dry state the gel's average vertical swelling ratio was estimated to be 2
± 0.4 for our gel molecular mass, concertation of the solution and typical electron beam irradiation
conditions (see SI Fig S2). The latter calibration was used to evaluate the size of hydrated gel objects based
on their SEM inspections in a dry state.
Working Principle and Major Effects
Upon impinging the liquid interface of the PEGDA aqueous solution, the primary electrons experience a
cascade of elastic and inelastic scattering events which slow down and broaden the beam and create a
droplet-like highly excited interaction volume where crosslinking of the PEGDA polymer molecules into
3
solid gel takes place (Fig.2(a)). The radiation-induced crosslinking in hydrogel solution occurs via two
mechanisms33: i) directly, via activating the reactive groups in the polymer with primary or secondary
electrons and ii) indirectly (see inset Fig.2a), via electron beam induced water radiolysis that generates a
variety of radicals capable to facilitate crosslinking. The partitioning between these two mechanisms
depends on multiple parameters such as concertation and molecular weight of the polymer, beam energy,
its intensity, exposure dose, solution temperature etc. what was well-studied for highly penetrating ionizing
radiation with homogenous excitation and diffusional profiles. We are dealing with an intermediate lesser
explored case which involves highly inhomogeneous localized excitation of polymer aqueous solution
where beam generated radiolytic radicals can diffuse freely in liquid away from the point of origin thus
initiating crosslinking events not only within but potentially beyond the electron interaction volume.
When soft X-rays are used to trigger crosslinking, the net effect is similar, although it proceeds via
different interaction pathways. X-ray photon inelastic interactions in a liquid matter are primarily due to
photoexcitation of the valence and core electrons of the solute and solution molecules. In the case of water,
the relaxation of O1s core hole proceeds primarily via emission of Auger KLL electrons with energies ca
500 eV 34. After such a de-excitation the energy is deposited to the liquid effectively via the same inelastic
electron scattering mechanism as described above for electron beam induced crosslinking. The major
differences in electron and soft X-ray induced crosslinking, therefore, are due to their inelastic scattering
cross-sections (Fig 2b): i) The values of photoionization cross-section for soft X-rays (100 eV2000 eV)
are on average ca 100 times smaller compared to few keV electrons and such X-rays, therefore, can
penetrate significantly deeper in to hydrogel solution forming gel features with larger heights and lower
crosslinking densities (see SI Fig S2c); ii) Electron ionization cross-section of water is a smooth function
of energy (Figure 2 b), thus the range of electrons in water solution and printed feature size always increase
with energy. In the case of soft X-rays however, the photoionization cross-section sharply increases at the
onsets of the specific core level excitations (Figure 2 b). These sudden variations of the X-rays range upon
chemical inhomogeneity of the sample will be used to control the aspect ratio of the printed features or
chemically selective objects encapsulation.
To gain deeper insight to the factors determining the process of gel printing we compared
experimental feature sizes e-beam printed in 20% w/v PEGDA aqueous solution through 50 nm thick SiN
membrane with modeled ones applying the same conditions. Monte Carlo (MC) simulated spatial
distributions of deposited radiation dose in aqueous solution are depicted in Figure 2c for a few different
energies and 5 nm wide electron beam. Note: the gradual change of the absorbed dose also implies the
significant variation of the crosslinking density (and therefore mechanical and other gel properties) across
the thickness of the printed object. Assuming the critical energy dose for gelling being in excess of ca103
Gy33, the expected height of stable hydrated objects ranges from ca 200 nm for 3 kV to ca 8 microns for 20
kV electron beams (Figure 2 c).
4
Figure 2. (a) Spatial distribution of the energy deposition by 5 nm wide 20, 10, 5, and 3 kV (left to right) electron beams in water
calculated using MC simulations. Inset depicts the concept of direct and indirect (through radiolytic radicals R) PEGDA polymer
crosslinking (b) the comparison of the electron and soft X-ray ionization cross sections at low energies; (c) MC simulated electron
and X-ray energy doses as a function of depth for electrons (100 pA current, 1 ms dwell time) and for X-rays (2·109 photons/s and
10 ms dwell time). These parameters represent general settings used in this work for feature printing. Dashed vertical lines depict
experimentally observed hydrated feature sizes created using the same exposure parameters. Lines color coding is the same as for
simulated curves with corresponding electron beam energy. d) Energy deposited distribution for 3 kV 200 pA electron beam (left
panel) and the corresponding distribution of hydroperoxyl radical concentration (right panel) calculated using beam induced
radiolysis reaction-diffusion model. The scale size is the same for left and right panels and highlights the effect of diffusion of
radiolytic HO2 outside the region where the energy is deposited; The deviation of the size of the printed objects in hydrated state
(arrows and dotted curve) from the one defined by electron range manifests the effect of diffusion of radiolitic species on a feature
size. (e) Heights of the dry gel features formed at 3 keV as a function of electron beam current (grey), and their estimated values
(black) in a wet state based on AFM calibrations. The shadowed band represents the estimated feature height based on MC
simulations considering HO2 radical as crosslinking initiator with a concentration between 0.2 mM and 0.4 mM.
However, the experimental data on thicknesses of hydrated features obtained under the same conditions
(dashed lines in the Figure 2c and Figures S3, S4 SI) are noticeably and systematically larger than electron
ranges obtained from Monte-Carlo simulations, what implies that indirect crosslinking via runaway
diffusion of radiolitic activators contributes to size increase of the printed features. To evaluate the latter
more accurately we adapted a kinetic radiolysis model, previously developed for environmental SEM 35
and in-liquid transmission electron microscopy36,37, to our SEM conditions (see details in SI). The numerical
simulations based on this model predict short lifetime and therefore a small diffusion length (< 200 nm) for
most abundant crosslinking initiator OH radical outside the electron beam interaction volume, thus ruling
out it from being a primary height determining factor. Other possible radiolytic crosslinking activators e.g.
hydroperoxyl radical, have significantly larger lifetime and can, therefore, diffuse to longer distances (1-5
microns) before reacting out completely. Figure 2 d compares the energy dose distribution upon water
irradiation with 3 keV focused beam (left panel) with corresponding HO2 concentration profile (right panel).
As can be seen, HO2 crosslinking activator concentration remains appreciably well beyond the electron
range and therefore may account for the systematically increased size of the printed features. For practical
applications, it is useful to estimate the critical concentration of radiolytic activator required to crosslink
the PEGDA hydrogel. Comparing the experimental feature thickness in a wet state and the range of modeled
concertation profiles of hydroperoxyl radical for 3 kV, we evaluate a critical concentration for crosslinking
5
of the hydrogel at the given concentration and molecular weight of PEGDA solute to be ca 0.3 mM of HO2
(Fig.2e).
Printing Controls
We now discuss the primary experimental parameters that can be tuned to control the size and shape of the
printed objects. In the raster scanning mode these are: i) electron beam energy (E), ii) Dwell Time (τD) at a
pixel, iii) pixel size (also step-size) during the scan (L) and iv) exposure dose D per pixel defined as
𝐷 = 𝐼𝐵𝜏𝐷𝑛 𝐿2⁄ where IB is an electron (photon) beam current (intensity) and n is a number of scans.
Figure 3 SEM measured heights of the dry rectangular and linear gel features as a function of a) exposure dose (via
beam intensity increase and fixed dwell time) for different energies of electrons (blue) and X-rays (red) beams. The
anticipated drastic reduction of the feature size created with photons with post O1s edge energies can also be observed;
b) dwell time for 5 keV electrons and 536 eV X-rays (beam intensity fixed). An inset shows SEM image of gel
structure written with variable along its length using 536 eV X-rays; c) step-size for 3 keV for electrons (blue) and
536 eV X-rays (red). Inset shows SEM image of gel lines written with different step size using 536 eV X-rays
Figure 3 shows the experimentally measured heights of the crosslinked gel dried features as a function of
each of these parameters with other being fixed. In addition to the apparent increase of the feature size with
electron and X-rays beam energy, the height variation with exposure dose has characteristic fast rise
followed by saturation behavior (Fig. 3a) also commonly observed for dry films. In accordance with prior
reports, the certain dose threshold (ca 4 e-/nm2 in our case) is required for through-membrane crosslinking
of a stable gel structure. While the increase of the dose does not affect the dimensions of the interaction
volume in water, it expands the boundary at which the critical concentration of hydroperoxyl radical can be
reached. As a result, feature sizes increase with the current until the point when radical concertation
saturates at steady state values being consumed by other species. The same is valid for the feature heights
increase with the dwell-time (Figure 3 b). Step-size becomes a rather important parameter when the beam
is rastered across the sample surface. By increasing the step-size and therefore the pixel area, one can tune
the overlap between interaction volumes and diffusion zones of individual adjacent pixels, thus reducing or
increasing the effective thickness (and width) of the printed feature. An important distinction between the
electron and soft X-ray beam writing used in this study is the size of the probe: electron beam has a diameter
of ca 5 nm while for X-rays it is ca 150 nm. On the other hand, the effective diameter of the interaction
volume of a few keV electron beam is appreciably larger (see Fig 2a) compared to one for soft X-rays.
Therefore, for X-rays, the formation of corrugated/ discontinuous patterns can be observed as soon as the
6
step-size become larger than 150 nm (see inset in Figure 3c). On the contrary, few keV electron beams
generate continuous patterns, for step-size values even larger than 100 nm.
To summarize: for practical applications, Dwell-time and Step-size can be useful independent
parameters to control the size and crosslink density of printed gel structures. Unlike the Beam Energy and
Intensity, these two parameters are untangled in SEM can be tuned during the scanning without the need
for re-focusing of the microscope. In the case of the e-beam printing, the lateral and longitudinal resolution
of the features obtained are coupled and are proportional to each other (Fig.2a). As one intensifies any of
the parameters: Beam Energy, Intensity, Dwell time, both the width and height of the pattern increase.
Finally, the smallest feature size and maximum attainable resolution for SEM based gelation are dependent
on the minimal energy of electrons that can penetrate through the SiN window and the threshold dose
required to crosslink the polymer in solution. We were able to routinely write ca 150 nm thin and 100 nm
wide gel lines with through a 50 nm SiN window using 3 kV electron beam energy, 13 pA,1 ms dwell time
and 100 nm step-size (see S1 of SI). Sub-100 nm features are attainable if thinner membranes or membrane-
free printing scheme (e.g. using ASEM) be used.
Application Examples
Composite hydrogels
The applications of hydrogels became immensely broadened via synthesis of composite formulations,
which allows for the engineering of their optical, electrical, mechanical, magnetic properties for numerous
applications. Fabrication of composite hydrogels can be broadly classified into two methods: (i) in-situ ones
where functional inclusions (e.g. nanoparticles) or precursors are premixed in the polymer solution and
become stabilized in the hydrogel during the crosslinking process, (ii) whereas ex-situ techniques typically
involve an inclusions impregnation process, applied after the crosslinking of the host matrix. In-situ
encapsulation offers advantages of embedding guest objects independently of their size, homogeneously
across the bulk, while the post-crosslinking impregnation depends on surface-to-bulk diffusion of chemicals
in the gel's matrix which is effectively hampered for the objects larger than gel's mesh size. Figure 4 a
(panels 1 and 2) show the principle of in-liquid entrapping of nanoparticles via the use of the focused e-
beam induced cross-linking of nanoparticles suspension followed with SEM characterization of the
composite gel. Monte Carlo simulations of electron beam energy deposed into the gel colloid (Figure 4 b)
predict an effective immobilization of high Z nanoparticles in the hydrogel matrix due to the formation of
gel cocoon around such a nanoparticle via preferential crosslinking of the near particle polymer solution by
secondary and backscattered electrons. For many applications, it is important to image the encapsulated
particles inside the gel with high spatial resolution. Figure 4 c depicts the SEM images of mixed 75 nm Au
and Ag nanoparticles entrapped inside the crosslinked hydrogel cube recorded through 50 nm SiN
membrane in a hydrated (inset) and dry state (background image) using backscattered electrons (BSE)
detector sensitive to fast electrons. In this SEM imaging mode, the contrast of the objects is determined by
the difference of the atomic numbers (Z) of the nanoparticles and matrix material as well as on the depth at
which the electrons are collected. In the SEM image Au and Ag particles with much larger Z compared to
hydrogel matrix appear brighter, and both: their signal strength and the resolution wanes with the depth of
the nanoparticle inside the gel (Figure 4 c). Both images show similar and homogeneous immobilized
particles distributions and energy-dispersive X-ray spectroscopy (EDS) chemical maps discriminate
between Au and Ag nanoparticles. Overall, SEM can be used to probe gel encapsulated high Z nanoparticles
as deep as few hundred nanometers using a 30kV beam with resolution still better compared to conventional
optical microscopy.
7
Figure 4 a) The principle of e-beam induced encapsulation and characterization of objects inside a composite gel. (1) Irradiation
and patterning of the gel solution through the SiN membrane, followed with SEM characterization in a dry stage (2). (3) Hydrogel
encapsulated cell treated with a fluorescent probe for viability tests. (4) Fluorescence microscopy of biological objects encapsulated
in a gel. b) Monte-Carlo simulations of the electron trajectories for Au nanoparticle immersed in hydrogel (left panel) and
corresponding deposited energy distribution inside the particle and nearby liquid (right panel) upon excitation with 5 keV electron
beam. c) SEM image of embedded 75 nm Au and Ag nanoparticles collected in a dry (left panel) and hydrated state (right panel).
Bottom raw depicts the zoomed area and corresponding Au and Ag chemical maps collected with EDS. d) Optical image of the
hydrogel gel after electron beam irradiation of cell-laden PEGDA solution. f) Fluorescence microscopy image of gel embedded
cells stained with viability indicator (calcein green dye).
Cells immobilization
Though the viability of cells in PEG-based hydrogels is well established1, most of the previous
encapsulation studies have been performed using photo-initiated crosslinking38. Here we attempt to employ
in-liquid gel focused electron (X-ray) beam crosslinking technique to encapsulate live cells before their
lethal radiation threshold dose is reached. The extent of radiation damage of the biological objects (cells)
during electron beam-induced PEGDA crosslinking is not well known and generated radiolytic species like
OH*, O-, and H2O2 at high concentrations can be detrimental to the cells. Prior electron microscopy studies
of biological specimens in the wet environment reported a broad range of critical dose values from ca 10-3
e -- /nm2 to ca 102 e -- /nm2 that is considered acceptable for live mammalian cells, yeasts and other
microorganisms. This ambiguity manifests a fundamental challenge of high-resolution electron microscopy
of live cells as well as the variance in live/dead criteria applied (see refs.39-43 as an example and discussion
therein). As we showed above, PEGDA crosslinking threshold dose is ca 4 e-/nm2 in our setup and can be
further reduced if higher molecular weight PEG is used.23 Since the imaging during crosslinking is not a
requirement, the encapsulation of live microorganisms using our approach can be feasible. The test process
flow is depicted in Figure 4a, panels 1, 3, 4. Once a polymer solution with premixed live cells was exposed
to electrons, the crosslinked gel with encapsulated cells was tested with standard calcein-AM cell viability
assay44. In this test, live cells uptake the non-fluorescent calcein-AM ester. Inside the living cell, ester reacts
with cytosolic esterases which convert it into green-fluorochrome: calcein to which cellular membrane is
not permeable. Bright-field optical image in Figure 4 d shows SiN window containing cell-laden PEGDA
solution after exposure to 10 kV primary beam with an average exposure dose of 8 e-/nm2 (absorbed dose
ca 3 x 106 Gy). Fluorescent microscopy image of gel-immobilized cells in the Figure 4f complements Figure
4e and indicates (i) that cells B-E do produce fluorescent calcein after encapsulation; (ii) calcein distribution
remains confined within the cellular borders and (iii) some of the cells (cell A in the figure 4e) appear dark
8
3D printing
implying its necrosis, while the rest of the cells presumably survive the encapsulation procedure. It is
necessary to note that the local absorption dose at the point of beam incidence is a few orders of magnitude
higher than the cells lethal dose limit. However, as can be seen from Figure 2a, c, d, the radiation damage
is localized within a micron wide region near the SiN membrane. Thus, the cells floating in solution a
micron or more away from the membrane see a significantly diluted load of radiolitic species. In addition,
the fraction of the radiolytic species produced by the beam becomes scavenged during gel crosslinking
reactions what, therefore effectively reduce the concentration of toxic species seen by the cells. This is a
promising result which, however, has to be considered as preliminary observation and requires further
studies.
The panels in Figure 5 show exemplary 3D structures printed using in-liquid crosslinking approach and the
capabilities and limitations of the technique for both electron (Figure 5(a-f)) and soft X-ray (Figure 5 (g-i))
focused beams are highlighted below. The technique benefits of high cross section excitation process, was
well-tested on standard dry gel films lithography and can complement the existing state of the art optical
2PP crosslinking methods with faster writing time and potentially higher resolution. The ultimate resolution
is restricted by the mean free path of primary and secondary electrons in a liquid which can be as short as
ca one nanometer for 50 eV÷80 eV electrons45. On the other hand, through-the-membrane electron
transparency dictates the minimal energy required for crosslinking, thus nanometer size resolution can only
be achieved with graphene-like ultrathin membranes. The primary energy of electrons also determines the
range of electrons in water and therefore the upper limit of the structure's heights to ca 10 micrometers
when standard 30 keV SEM is used (Fig. 5 b, d). The lateral dimensions of the printed object are restricted
by a few hundred microns depending on the mechanical stability of pressurized 30-50 nm thick SiN (or
SiO2) electron transparent membrane. In addition, through-membrane approach implies limitations on direct
writing of suspended or narrower footprint structures. However, the aforementioned limitations are not
finite and arbitrary shaped millimeters or even centimeters size features with tens nanometers resolution
can in principle be fabricated via curing the open liquid surface directly using atmospheric SEM chamber-
less setup46.
The coaxial cylindrical 3D structures in the Figure 5 d, e have been printed in liquid gel solution
via varying only one electron beam parameter: electron energy in (5 d) or dwell time in (5 e). The dynamic
range of heights exceeding 100 was achieved via beam energy variation, however, the sharpness of the
features drops concomitantly with energy. The facile and instant modulation of the irradiation parameters
such as dwell time and step-size allow batch-fabrication of the high aspect ratio microstructures as a
flagella-like object in Figure 5 c in a single run within a fraction of second. The similar structures have been
used for locomotion at low Reynolds numbers after being functionalized with magnetic nanoparticles47.
The effect of the beam intensity and writing sequence on the linear feature size and morphology is shown
in Figure 5f. As discussed above, the feature size rapidly increases with beam intensity and then saturates.
Interestingly, the nodes height increase occurs for thinnest overlapping lines and is negligible for thick
nodes. This has a direct consequence for additive fabrication of overlying structures and indicates that
crosslinking still proceeds on top of already printed structure under the conditions where either (i) electron
range (together with radiolitic initiator diffusion length) exceeds the size (height) of the first printed layer
or (ii) the saturation of the crosslinking within the interaction volume has not been achieved during the first
layer printing.
3D printing with focused variable energy X-ray beam has an additional capability to modulate the feature
size via printing with different photon energies just below and after the element specific absorption edge.
The examples in the Figures 5 h, i show that it can be performed in both ways: through already printed
feature as in the Figure 5h and as a separate nearby structure as in the Figure 5i. Compared to printing with
electrons, the height of the X-ray induced structures was appreciably larger while their density
correspondingly lower what results in the significant surface rippling of the features upon drying.
9
Figure 5 SEM images of exemplary 3D features fabricated using focused electron beam a) - f) and soft X-rays g)- h). a) NIST logo
is written with 3 keV electrons (100 pA 1msec dwell time) using 10 nm pixel size. b) Donut-like gel feature made by writing 1 μm
wide ring with a radius of 10 μm using 20 keV electrons 100 pA, 1 msec dwell time. c) Flagella-like structures printed with 10
keV, 3 pA, 10 μsec dwell time and 100 nm step size. d) Dome structures formed out of four overlapping coaxial rings by varying
electron beam energy for every ring; Parameters: beam current 100 pA, 50 nm step-size and 1ms dwell time. e) Similar to (d)
concentric rings formed at 10 kV by varying dwell time and pixel size. f) Grid structure formed by varying beam currents at every
line. Electron beam: 5 kV, 0.01 msec dwell time and 100 scans per line. g) ELETTRA and NIST logos printed with 536 eV 150
nm wide X-ray beam with 25 msec dwell time. Photon flux ca 2·107 ph/nm2 s and 100 nm step size. h) Dices printed with two
photon energies: 13 µm x 13 µm base squares- 526 eV, 2.5ms dwell time, flux 1.3·105 Ph/nm2s and small 2.5 µm x 2.5 µm squares
536 eV, 2.5 msec dwell time, 100 nm step-size and 1.2·105 ph/nm2s flux. i) Labyrinth structures with walls printed either with 526
eV or 536 eV, 100 nm step-size and 5 msec (top panel) and 25 msec (bottom panel) dwell times.
Conclusions
We employ scanning electron and X-ray microscopy for spatially controlled cross-linking of hydrogels in
their natural liquid state. The feasibility of this technique was demonstrated via gel encapsulation of live
cells, fabrication of composite hydrogels and 3D printing of model hydrogel structures with submicron
resolution. We evaluated the threshold dose required for electron beam induced cross-linking in a liquid
state and explored the effect of diffusion of radiolitic species and other experimentally tunable parameters
such as electrons (or X-rays) energy, beams intensity, exposure time etc. on the resolution and size of the
features formed. High spatial resolution printing of a large class of hydrogels in the liquid state can also be
extended to gas phase polymerization and offers unique advantages in shape, size and precision compared
to traditional dry gel lithography and significant improvement in writing time compared to multiphoton
polymerization methods. The proposed technology can be implemented in any high vacuum, environmental
or atmospheric pressure (or air) SEM (ASEM) or laboratory-based X-ray microscopes. The ability to
operate with free liquid replenishable surfaces offered by ASEM is particularly attractive since it allows for
truly additive nanofabrication and rapid prototyping of gels with sub-100-nm resolution using this method.
The tunability of X-ray energy at synchrotrons opens an additional opportunity to conduct element specific
3D gel printing in solutions relevant to biomedical, soft micro-robotics, electrochemical and other
applications. Moreover, the combination of our method with recently proposed implosive fabrication
technique14 can in principle result in nanometer-scale 3D printing.
10
Methods
Hydrogel Synthesis and Printing
The standard tests have been performed with a stagnant liquid setup where ca 10 mL of 20% w/v PEGDA
(average molecular weight 0.7 kg/mol) solution was drop-casted on to Si chip with nine 50 nm thick SiN
membrane. The chip was connected sealed with vacuum-tight chamber. The assembly was placed inside
standard SEM where the liquid polymer solution was patterned with a scanning focused beam through the
SiN window with a known amount of dose at every pixel. The experiment was repeated in another part of
the window or at the different SiN window using a different set of irradiation parameters. After e-beam
exposure, the chip was dismounted from the chamber and rinsed in water to remove the unreacted solution.
This leaves an array of printed gel features on SiN membranes which were inspected in a hydrated state
with AFM or optical microscopy/profilometry and/or in a dry state using SEM, AFM, EDX, XPS, µ-Raman
and other characterization tools. Printing with soft X-rays was performed at ESCA microscopy beamline at
ELETTRA equipped with zone plate optics capable to focus monochromatized light to a spot 150 nm-200
nm in diameter. The undulator and monochromator have been set to operate either at 530 eV or at 536 eV
with the photon flux in the order of 109 ph/s at 150 nm wide focal spot. The chamber equipped with the
same chip with nine SiN membranes array was filled with PEGDA solution, sealed and scanned in front of
the beam in a pre-programmed path to generate a required pattern.
Composite Hydrogels
Gold and silver nanoparticles (75 nm in dia.), mixture (ca 1:10 wt/wt) suspension in water was pre-
concentrated by centrifuging (2000 r/min, 5 min) and was subsequently extracted and mixed with the 20%
w/v PEGDA solution. As prepared composite solution was irradiated in the liquid phase with an electron
or soft X-ray beams through 50 nm SiN membrane. The chip with the printed composite gel structures was
then developed in water and subsequently analyzed as described in the article and Supporting material.
Cell Encapsulation and Proliferation Tests
Caco-2 cells were thawed and cultured in DMEM (Dulbecco's Modification of Eagle's medium) with 4.5
g/L glucose and L-glutamine without sodium pyruvate for a few days. These were subsequently washed in
PBS and DMEM. Lifting off process was carried out using 2 ml of .05% (w/v) Trypsin-EDTA and left for
5-10 min until the attached cells become mobile on the slide. Neutralization of Trypsin is done by adding
an equal volume of growth medium. The obtained cell suspension is concentrated by centrifuge. The cell
concentrate is added to the PBS based PEDGA solution and cells were allowed to adhere to the SiN
membrane. For viability tests after irradiation, the crosslinked gel with encapsulated cells was rinsed in the
growth medium for cell and exposed to calcein green dye in the growth medium for 1 hr. Inside the live
cells, the non-fluorescent calcein is converted into green-fluorescent calcein via de-esterification of the
acetoxymethyl group by the esterases only produced by a live cell.
Modeling Details
A stack of 50 nm SiN and 20-micron thick water layer was modeled with the electron beam incident on the
SiN membrane. The Monte-Carlo (MC) simulations (described in the SI section) generated the trajectories
and corresponding energy deposited (Gy). The parameters used to Generate Figure 2 a) were as follows:
625,000 electrons for a 5 nm beam diameter for 3 keV, 5 keV, 10 keV, and 20 keV primary beam energy.
The energy deposition results in Gy for 625000 electrons were scaled depending on the current value to
obtain the rate of energy deposition (Gy/sec) and fed into the radiolysis kinetics model (described in detail
in the SI section). To generate results shown in Figure 2 d), the CFD model was executed for 3 kV primary
beam, and currents current values: 50, 85, 125, 160,200 and 215 pA.
11
Acknowledgments:
TG acknowledges support under the Cooperative Research Agreement between the University of Maryland
and the National Institute of Standards and Technology Center for Nanoscale Science and Technology,
Award 70NANB14H209, through the University of Maryland. Authors are thankful to Dr. Andras Vladar,
Dr. John Villarrubia, Dr. Dean Delongchamp (all at NIST), Prof. G. Kolmakov (CUNY), Prof. Dr. Michael
Zharnikov (Univ. of Heidelberg) for constructive feedback on the manuscript and to Dr. D. Perez (NIST)
for the help with profilometry measurements.
Disclaimer: Certain commercial equipment, instruments, or materials are identified in this paper to foster
understanding. Such identification does not imply recommendation or endorsement by the National
Institute of Standards and Technology, nor does it imply that the materials or equipment identified are
necessarily the best available for the purpose
Author contributions
A.K. and T.G. conceived the idea and conducted core measurements. A.K. directed the work. T.G.
performed experiments, data analysis, simulations, and modeling. G.H. provided engineering support to the
method. E.S. performed AFM measurements. J.S. did electron beam lithography. Y.Y. and M.E. grew and
characterized cell cultures. V.A. and T.G. conducted profilometry characterizations. X-ray studies have
been performed by P.Z., M.A., L.G., and A.K. T.G. and A.K. wrote the paper, and all authors commented
on the manuscript.
Additional information
Additional information Supplementary information is available in the online version of the paper. Reprints
and permissions information is available online at www.nature.com/reprints. Correspondence and requests
for materials should be addressed to A.K.: [email protected]
Competing financial interests
The authors declare no competing financial interests.
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Supplemental Material
Height estimation
The dimensions of the obtained features were measured using various techniques, including optical
Profilometry (Figure S1 a, d), SEM (Figure S1 b, e, f) and AFM (Figure S1 c). Depending on the shape and
size of the features different methods were found suitable.
Figure S1 Different methods of height estimation are shown for a), b), c) electron crosslinked samples and d), e), f)
X-ray crosslinked samples. a) Profilometry: (left) optical image, (right) 3D structure of the hydrogel formed at 3 kV.
b) SEM: (left) image of thin lines taken through the membrane; (right) the same sample was placed upside down and
tilted to view projection of the cross-section. Height was estimated based on the angle of tilt. c) AFM of hydrogel
done in a hydrated state (left) and same feature done in a dry environment (right). d) Profilometry of 536 eV X-ray
sample (left) and 526 eV X-ray sample (right). e) SEM of X-ray lines formed at 526 eV. f) SEM of the labyrinth-like
structure formed by squares alternating from 526 eV to 536 eV from the center out.
Samples with larger dimensions were quantified using profilometry. For laterally thin samples, SEM was
found to be most suitable. The sample was mounted on a tilted stage facing the electron beam. The projected
height of the sample can be measured and used to calculate the actual height based on the tilt angle as shown
for electron samples in Figure S1 b. For vertically thin features generated using low electron beam energy,
AFM (Figure S1 c) was found to be most accurate for height estimation. Similar height estimations were
done for X-ray crosslinked samples as shown in Figure S1 d, e, f. For consistency, all measurements were
done after exposing the sample to vacuum.
Since these hydrogels have a high-volume fraction of water, they shrink when exposed to air or vacuum.
This is deduced by measuring the shrinkage of macro-sized UV cured hydrogels with time using an optical
15
2 µm10 µmH / Sin φφH150100500nm20 µm15 µmDrya)b)20 µm 10 µm 2.5 µm0.0 µm20 µm 10 µm Wetc)10 µm10 µmd)e)5 µm010 µmf) microscope, as shown in Figure S2 a. UV cured samples shrink to 20% of their original wet size. However,
there can be differences in the water content of the UV cured samples and the electron beam cured samples
depending on the density of crosslinking. In order to estimate the original dimension of electron beam cured
wet hydrogel, AFM was done in the hydrated state in a liquid environment and then post drying on the same
feature. Results, shown in Figure S2 b, suggest an average shrinkage of 50% ± 20% on vacuum drying.
This is significantly less when compared to shrinkage fraction in UV cured samples (80%) suggesting
differences in the curing mechanism of the two techniques. The difference between these two techniques
can be seen in the SEM images in Figure S2 c, where the UV cured samples exhibits rougher morphology
upon drying indicative of a more porous structure. For comparison SEM image of X-ray crosslinked sample
is also shown, reflecting patterns which are intermediate in size, between the UV and electron crosslinked
samples. We conclude that the original dimensions of the as-prepared hydrated hydrogel via electron beam
and X-ray samples are therefore approximately twice and two-four times as large compared to the dry
values, respectively. All dimensions shown in the main text Figure 2 are from dry samples.
Figure S1 Effect of drying on UV cured and E-beam cured samples. a) Volume Fraction remaining of UV cured
samples S1 and S2 as a function of time b) dry height vs. wet height of different samples to estimate the dry fraction.
Average Dry fraction for e-beam samples 0.52 (black line) and for UV cured samples is 0.2 (red line). C) SEM image
of UV cured, X-ray cured and electron beam cured samples at similar settings and magnification after drying.
A correction factor of 2 is therefore multiplied to the dry height of the electron beam samples to obtain the
wet height.
X-ray Dose Estimation
Intensity attenuation of X-rays with depth can be calculated using Beer-lamberts law
𝑁 = 𝑁0 exp(−𝜇𝑑)
(1)
here 𝑁0 is the photon flux per unit area at the surface,
per unit mass can then be calculated as
1
µ
is the attenuation length and d is the depth. Dose
−
1
𝜌
𝜕(𝑁 ℎ𝜈)
𝜕𝑑
=
𝜇𝑁0ℎ𝜈
𝜌
exp(−𝜇𝑑)
(2)
here 𝜌 is the density of the interacting media and ℎ𝜈 is the photon energy. Beam shape at the sample was
known to be Gaussian with FWHM of 150 nm. Measurements from photodiodes were calibrated to obtain
16
a)b)c)●●●●●●●●●●●●●●●●●●●●●●●S1●S2Fitted0.10.20.30.40.50.60.0.0.20.40.60.81.TimeminVolumeFrac.Remaining1 μmX-rayUVElectrons the total photon flux on the sample. From the beam shape and total flux, 𝑁0 was calculated by averaging
over the pixel area (same as step size).
Electron Dose Estimation
The spatial distribution of energy is computed using Monte-Carlo simulations48, where a primary beam of
known energy is allowed to interact with a stack of 50 nm Silicon Nitride membrane and bulk water. The
electrons are allowed to experience elastic and inelastic collisions in a cascade-like process as they travel
until they reach threshold energy and thermalize. The elastic interactions were treated as discrete events
using Motts cross-section, whereas the inelastic events were approximated based on the mean energy loss
model by Joy & Luo 49. Figure S3a shows the trajectory of electrons with the color denoting the energy of
electrons for 5 keV primary beam. The corresponding energy deposited distribution into the water is shown
in Figure S3 b.
Figure S3 Results from Monte-Carlo simulation generated by simulating 625000 electrons, for a 5 nm beam diameter
at 5 keV primary beam energy. a) The trajectory of electrons, with color denoting the energy of the electron. b) spatial
distribution of the energy deposited distribution in water.
From Monte Carlo simulations, it is clear that the dose varies dramatically as a function of radial distance
from the point of incidence of the primary beam. Since most experiments are done in scanning mode,
literature typically reports the dose at the surface, averaged over the pixel area, in units of e-/nm2, referred
to as 𝑐𝑝
𝑜 in the main text. The dose can be expressed as
𝑜 , or in units of Gy (J/kg), referred to as 𝜑𝑝
𝑜 =
𝑐𝑝
𝐼𝐵 τD n
𝐴𝑝
(3)
Where 𝐼𝐵 is the beam current in e-/ sec, 𝐴𝑝 is the pixel area in nm2, τD is the dwell-time per scan in seconds
and n is the number of scans. Unless otherwise mentioned, in this study the pixel size is 100 nm x 100 nm
and the number of scans is 1.
This can be further converted into pixel averaged surface dose in Gy (J/kg) using:
# 𝑜𝑓 𝑒𝑙𝑒𝑐𝑡𝑟𝑜𝑛𝑠
1.6 ∗ 10−19 ∗ 106
𝑜 (𝐺𝑦 𝑜𝑟
𝜑𝑝
𝐽
𝑘𝑔
) = 𝑆𝑃 ( 𝑀𝑒𝑉
) (
𝑐𝑚2
𝑔
10−3
) ∗ 𝑐𝑝
𝑜 (
𝑛𝑚2
) (1014 𝑛𝑚2
𝑐𝑚2)
(4)
here 𝑆𝑃 is the density normalized stopping power for electrons, which in turn is a function of the energy of
𝑜 for the set of parameters (1nA, 1 ms 100nm x 100nm), for
electrons. For example, once we know the 𝑐𝑝
𝑜
known energy of primary beam (say 𝐸 = 3 keV, with the 𝑆𝑃 of electrons in water in 56.21 MeV cm2/g), 𝜑𝑝
is 5.61 x 108 Gy.
Table S1 A few examples of the dose values used for PEG crosslinking and electron microscopy of
microorganisms.
17
200 nm2520151050x108Gy53.752.551.250keVa)b)MembraneWaterMembraneWater Crosslinking dose &
conversion
Comment
Reference
~ 3 107 Gy
Pegilation of Au NP in solution
~ 0.1 C/m2= 1 e/nm2
Dry PEG 6800
~ 5·103 e/nm2
Carbonization of PEG
50
23
26
51
51 pp 468 -- 480
Isaacson, M.
S. Specimen
Damage in the
Electron
Microscope. In 52
pp 43 -- 44
42
53
Radiation
&
parameters
X-rays ~12
keV
Electrons
10 keV 20-
100 pA
50 eV
electrons
TEM
TEM
Cells viability dose
0.005 e -- /nm2 at 100 kV
37 e -- /nm2,
Reproductive death of E. coli
Minimum dose required for high
resolution (5 nm) imaging of bio
specimen (note that this is larger than
viability dose)
colony-forming properties of E. coli
TEM
6.2 × 10 -- 4 e -- /nm2
TEM
1 to 80 e -- /nm2
ESEM
30 kV
103 to 105 e−/ nm2
E.coli increasingly compromised after
ca 30 e/nm2
fixed COS7 fibroblasts, can be kept
undamaged
𝑜 value for various instances
For clarity and direct comparison with literature values, we report the 𝑐𝑝
in the main text. For more accurate estimations where the spatial distribution is needed (for example, as
inputs into the Kinetic model below), we use Monte Carlo simulations.
A systematic discrepancy is observed between the experimental height and the one predicted from Monte-
Carlo simulations, as shown in Figure S4
𝑜 and 𝜑𝑝
18
Figure S4 Height vs. Energy of Primary beam for parameters of 400 pA current and 1 ms dwell time for the electron
beam. (blue) dry height measured from experiments. (orange) wet height estimated assuming 50% shrinkage. (green)
Height estimated assuming critical crosslinking dose of 106 Gy.
We hypothesize that this discrepancy is a result of diffusion of radiolytic species which contributes to an
increase in the size of the experimental features. A kinetic model, taking into account the effect of diffusion,
is therefore formulated and presented here to bolster this theory.
Kinetic Model
A kinetic model involving generation, reaction, and diffusion of the radiolytic species is built for application
to liquids in SEM. This is based on a prior model by Schneider et al. that was developed for TEM36,37 . The
model is adapted to account for the highly non-uniform spatial dose deposition in case of SEM, by coupling
it with Monte-Carlo simulations. The model framework comprises of a coupled differential equation (Eqn.
5) based on transport of dilute species for each primary and secondary radiolytic species. All parameters
including the rate constants and diffusion coefficients can be found elsewhere 36.
Briefly, the model can be described as follows. Energy is deposited by the electron beam into the hydrogel
solution. The calculated 2D axisymmetric energy distribution, shown in Figure S3 b, is fed as input into the
kinetic model. This energy dose acts as a source for generation of primary radiolytic species via breakdown
−, 𝐻, 𝐻2, 𝑂𝐻, 𝐻2𝑂2, 𝐻𝑂2, 𝐻+, 𝑂𝐻−) which in turn react to produce secondary species
of water (𝑒ℎ
(𝐻𝑂2
−, 𝑂−). Empirical G-values36,37 for primary radiolytic species (
−, 𝐻𝑂3, 𝑂2, 𝑂2
−, 𝑂3, 𝑂3
Table S) are used to correlate dose and the concentration of radiolytic species produced (Eq. 6). G-values
for secondary species is 0. All species are allowed to react and diffuse until they reach a steady state (~1
ms).
Table S2 G-values for primary radiolytic species
Species
-
eh
H
H2
OH
H2O2
HO2
H+
G-values (molecules/100 eV)
3.47
1.00
0.17
3.63
0.47
0.08
4.42
19
OH-
𝑑𝐶𝑖(𝑟, 𝑧)
𝑑𝑡
0.95
= 𝐷𝑖 𝛻2𝐶𝑖(𝑟, 𝑧) + ∑ 𝑘𝑗𝑘 𝐶𝑗(𝑟, 𝑧) 𝐶𝑗(𝑟, 𝑧)
− ∑ 𝑘𝑖𝑙 𝐶𝑖(𝑟, 𝑧)𝐶𝑙(𝑟, 𝑧)
+ Si(𝑟, 𝑧)
(5)
𝑗,𝑘≠𝑖
𝑙
𝑆𝑖(𝑟, 𝑧) = 𝜑𝐵(𝑟, 𝑧)𝐺𝑖
(6)
Where (𝑟, 𝑧) are cylindrical coordinates, axisymmetric across the vertical axis along the line of incidence
of the Primary beam. 𝐶𝑖 is the concentration, 𝐷𝑖 is the diffusion constant, Si is the source term, 𝜑𝐵 is the
energy density deposited and 𝐺𝑖 is the G-value of the 𝑖𝑡ℎ species.
Imaging of composite gels with SEM
For many applications, it is important to image the encapsulated particles inside the gel with high spatial
resolution. Figure S5 depicts the SEM image of 50 nm Au nanoparticles entrapped inside the crosslinked
hydrogel matrix collected with the detector sensitive to fast backscattered electrons (BSE). In this SEM
imaging mode, the contrast of the objects is determined by the difference of the atomic numbers (Z) of the
nanoparticle and matrix material as well as on the depth at which the electrons are collected. In the SEM
image Au particles with much larger effective Z compared to hydrogel matrix appear brighter, and both:
their signal strength and the resolution wanes with the depth of the nanoparticle inside the gel (Figure S5).
To evaluate the feasible imaging depth for hydrogel embedded objects we conducted MC simulation of the
BSE images of heterogeneous and compared them with the experimental data (Figure S5). As can be seen,
SEM can be used to probe nanoparticles as deep as a few hundred nanometers using a 20kV beam energy
with resolution still better compared to conventional optical microscopy.
Figure S5 (Left) SEM image of embedded Au nanoparticles collected with backscattered electrons. The
observed effective diameters increase, and BSE signal reduction is due to the different depth of embedded
nanoparticles. (Right) MC simulated diameter of 50 nm nanoparticles as a function of the particle depth.
Insets are comparisons experimentally observed and MC simulated SEM images
Raman Analysis
Raman analysis was done to validate the chemical effect of the curing process. Raman spectra of dried
PEGDA correlates well with the previous studies54,55 showing C-H-C bending peak at 1470 cm-1 ( Figure S
peak b) and C=C peaks at 1640 and 1410 cm-1 ( Figure S peaks a, d and e). Peaks at 1600 and 1676 cm-1
are from the initiator Irgacure 2959 as indicated by their appearance only after the initiator is added.
Literature suggests 1600 cm-1 peak corresponds to C=C stretching in an aromatic ring. Post-exposure to
20
electron beam the C=C stretching peaks of PEGDA and unidentified peak at 1705 cm-1 are reduced (peaks
a, d and e in S6), supporting crosslinking induced by a breakdown of pi bonds.
Figure S6 Raman spectra for dried PEGDA sample excited using 532 nm laser, (black) without initiator before e-beam
exposure, (red) with initiator before e-beam exposure, (green) with initiator after e-beam exposure. All spectra are
normalized w.r.t. peak b representing C-H-C bending. Peaks a, c, d, e, and f are the ones which are useful in
interpreting the chemical structure and its changes on exposure to e-beam and are discussed in the text.
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|
1704.06604 | 1 | 1704 | 2017-04-19T08:49:54 | Modeling based screening for optimal carrier selective material for Si based solar cells | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | Carrier selective (CS) silicon solar cells are increasingly explored using a variety of different materials. However, the optimum properties of such CS materials are not well understood. In this context, through detailed analytical and numerical modeling, here we provide several interesting insights on the efficiency tradeoff with CS material properties. First, we show that perfect band alignment is a desirable feature only if the interface is devoid of any trap states. Otherwise, a band offset of around 0.2eV-0.4eV provides sufficient band bending to reduce the effect of interface recombination, thus improving the performance. Surprisingly, the interface passivation quality for the minority carrier extraction layer is found to be far less demanding than that for the majority carrier extraction layer. Additionally, doping density and dielectric constant of CS layers have a similar effect as band offset on solar cell performance. Our results have obvious implications toward the selection of appropriate materials as carrier selective layers and hence are of broad interest to the community. | physics.app-ph | physics | Modeling based screening for optimal carrier selective
material for Si based solar cells
Nithin Chatterji1**, Aldrin Antony2, and Pradeep R. Nair1*
1Dept. of Electrical Engineering,
2Dept. of Energy Science and Engineering,
Indian Institute of Technology Bombay, Mumbai, India
email id- *[email protected] ,**[email protected]
Abstract – Carrier selective (CS) silicon solar cells are
increasingly explored using a variety of different materials.
However, the optimum properties of such CS materials are not
well understood. In this context, through detailed analytical
and numerical modeling, here we provide several interesting
insights on the efficiency tradeoff with CS material properties.
First, we show that perfect band alignment is a desirable
feature only if the interface is devoid of any trap states.
Otherwise, a band offset of around 0.2eV-0.4eV provides
sufficient band bending to reduce the effect of interface
recombination, thus improving the performance. Surprisingly,
the interface passivation quality for the minority carrier
extraction layer is found to be far less demanding than that for
the majority carrier extraction layer. Additionally, doping
density and dielectric constant of CS layers have a similar
effect as band offset on solar cell performance. Our results
have obvious implications toward the selection of appropriate
materials as carrier selective layers and hence are of broad
interest to the community.
I.
INTRODUCTION
for
the obvious advantages related
Silicon based heterojunction devices with carrier selective
contacts are increasingly explored as a cost effective
alternative for the conventional diffused PN junction based
c-Silicon solar cells[1]–[10]. Indeed, various techniques like
atomic layer deposition[3], chemical vapor deposition[1],
solution processing[6], etc., are explored
low
temperature fabrication of carrier selective contact layers.
Apart from
to cost
effectiveness, large band gap carrier selective layers can
also reduce the parasitic absorption at the front end (as
compared to the parasitic absorption loss in highly doped
emitter of c-Si solar cells)[11]–[14]. Further, good
conductivity can be achieved in these materials without
intentional doping – which is usually a high temperature
process which adds to the cost. As a result, different
materials
as TiO2[1]–[3], LIFx[4], KFx[5],
PEDOT:PSS[6], MoOx[7]–[10],V2O5[10], and WO3[10]
such
1
have been extensively studied recently. We note that there
have been several modeling[15], [16] efforts as well to
understand the device performance of various materials as
carrier selective contacts with silicon.
In spite of the above exciting research, however, several
critical aspects related to Si based carrier selective solar
cells still remain unexplored or not well understood. For
example - (a) how crucial is the band level alignment of the
CS layer with c-Si, or rather is it essential to have the CS
layer bands align with the respective bands of Silicon? (b)
Given a band offset, what is the effect of CS/Si interface
traps on the efficiency, and (c) with the above information,
which pair of materials might be best suited for Si based
solar cells. In this manuscript, we address the above
mentioned topics through detailed modeling. For this, we
first develop an analytical model to predict the functional
dependence of device performance on CS material
parameters (Section II). These predictions are then further
refined through detailed numerical simulations (Section III).
Curiously, our results indicate that the performance of the
solar cell is the worst for the ideal case scenario in which
there is no band discontinuity between the CS layer and Si
(respective bands). Further, we provide a detailed map of
efficiency vs. CS material parameters which could be of
immense interest to the community to a-priori evaluate the
performance of any pair of materials as carrier selective
layers.
II.
ANALYTICAL MODEL
Figure 1 shows a schematic of the silicon heterojunction
solar cell with carrier selective contacts along with the band
level alignments. Here ESL and HSL denote the electron
and hole selective layers, respectively. At the ESL/Si
interface, hole transport from Si to ESL is blocked due to
assume
perfect
electron
the large barrier between the valence bands of both
materials. However, the transport of electrons at the same
interface is more readily facilitated, even though there could
be a band offset between the conduction bands. Note that a
positive value for band offset indicates that the photo-
generated carriers need to overcome a barrier to reach the
corresponding transport layer, while a negative value for the
offset indicates that the carrier injection from transport layer
to silicon is limited by a potential barrier. Further there
could be interface traps as well at the ESL/Si interface.
Similarly, we
blocking
characteristics and a valence band offset at the Si/HSL
interface. Here we explicitly consider the performance
trade-off of such solar cells as a function of transport barrier
and interface traps. As such, many other factors could also
influence the solar cell performance which includes the
effective doping and thickness of carrier selective layers,
nature of metal or TCO contact with the carrier selective
layers, etc. With the aim of developing a coherent
description of the various effects, here we make a few
simplifying assumptions – (a) the contact layers are
considered to be doped, (b) the metal or TCO contact with
selective layers are assumed to be ohmic in nature, (c) over
the barrier transport is assumed as the dominant transport
mechanism at Si/CS layer interface, and (d) uniform density
of traps at Si/CS layer interface. With these assumptions we
first develop an analytical model to predict the device
performance. Later, detailed numerical simulations (self-
consistent solution of Poisson and carrier continuity
equations) have been performed to further refine analytical
predictions. The parameters used in this study are provided
in the appendix A.
that dictate
The material properties of CS layer that affect the
electrostatics of the solar cell are (a) the band alignment
with c-Si, (b) traps at the interface between CS layer and Si,
(c) doping density and (d) the dielectric constant of CS
layer. Note that these parameters are both material and
process dependent. The parameters
the
efficiency of a solar cell are the open circuit potential (VOC),
short circuit current (JSC), and the fill factor (FF)[17]. Of the
above, the maximum achievable 𝑉𝑜𝑐 is dictated by the
detailed balance of carrier generation with various
recombination mechanisms. Similarly, the 𝐽𝑠𝑐 is a measure
of the photo-generated carrier collection efficiency at short
circuit conditions, while 𝐹𝐹 is more influenced by the
collection efficiency at maximum power point condition.
Below, we develop an analytical model to predict the
variation of the above three performance metrics as a
function of CS material parameters. We first start with the
effect at the ETL/Si interface with ideal conditions assumed
for Si/HTL interface (i.e., zero band offset for holes, perfect
electron blocking, and lack of any interface trap states).
a) Voc estimation: For p-type substrate, the maximum
achievable 𝑉𝑜𝑐 is given as.
𝑉𝑜𝑐 =
𝑘𝑇
𝑞
ln
𝐺𝜏𝑒𝑓𝑓
𝑛𝑖
+
𝑘𝑇
𝑞
ln
𝑁𝐴
𝑛𝑖
, (1)
where 𝐺 = 1.35 × 1019𝑐𝑚−3𝑠−1 is the uniform generation
rate in c-Si corresponding to AM1.5 spectrum, and 𝑁𝐴 is the
bulk doping density in c-Si. The effective minority carrier
lifetime, 𝜏𝑒𝑓𝑓[18], is given by
1
𝜏𝑒𝑓𝑓
=
1
𝜏𝑏𝑢𝑙𝑘
+
𝑠
𝑤𝑆𝑖
, (2)
where 𝜏𝑏𝑢𝑙𝑘 is the bulk lifetime which includes the SRH,
radiative
recombination
mechanisms. Accordingly, for low levels of illumination we
recombination,
and Auger
have 𝜏𝑏𝑢𝑙𝑘 =
1
𝜏𝑆𝑅𝐻
1
+𝐵𝑁𝐴+𝐶𝑁𝐴
2, where 𝐵 is
the
radiative
Fig. 1: Schematic (top) and energy level alignments (bottom)
of a Si based carrier selective solar cell used to study the effect
of band alignment on solar cell performance. In the numerical
simulations, 𝛥𝐸𝑐 at
is varied
from −0.6𝑒𝑉 to +0.6𝑒𝑉, while the barrier for holes is kept
fixed (2.28𝑒𝑉). Similarly, the 𝛥𝐸𝑣 at the c-Si/HSL interface
is varied from −0.2𝑒𝑉 to +0.5𝑒𝑉, while
the barrier for
electrons is kept fixed (2.28𝑒𝑉). Refer Table 1 for simulation
parameters.
the ESL/c-Si
interface
recombination coefficient and 𝐶 is the Auger recombination
coefficient. The parameter 𝑠 in eq. (2) denotes the surface
recombination velocity at ESL/c-Si interface and 𝑤𝑆𝑖 is the
thickness of c-Si substrate. The SRH model[19] indicates
that
2
𝐸𝑐
∫
𝐸𝑣
𝑠 =
𝑅𝑠
𝛥𝑛𝑠
=
𝑛𝑠𝑝𝑠 − 𝑛𝑖
2
𝑛𝑠 + 𝑛1𝑠
𝑝𝑠 + 𝑝1𝑠
𝑐𝑝𝑠
𝑐𝑛𝑠
+
𝛥𝑛𝑠
𝐷𝑖𝑡 𝑑𝐸
, (3)
where 𝑛𝑠 and 𝑝𝑠 are the electron and the hole densities,
respectively, at the ESL/c-Si interface under illumination
and 𝛥𝑛𝑠 is the excess electron density at the ESL/c-Si
interface in the presence of light. Under open circuit
conditions, we have
𝑛𝑠 = 𝑛𝑏𝑢𝑙𝑘𝑒
∆Ψ
𝑘𝑇/𝑞 , (4)
𝑝𝑠 = 𝑝𝑏𝑢𝑙𝑘𝑒
−
∆Ψ
𝑘𝑇/𝑞 , (5)
𝑛𝑏𝑢𝑙𝑘 = 𝐺𝜏𝑒𝑓𝑓, (6)
where 𝑛𝑏𝑢𝑙𝑘, 𝑝𝑏𝑢𝑙𝑘 are
concentrations, respectively,
bending in c-Si and is given as,
the bulk
electron
in c-Si. ∆Ψ is
and hole
the band
∆Ψ =
𝑁𝐷𝜀𝑒𝑠𝑙(𝑉𝑏𝑖 − 𝑉𝑜𝑐)
𝑁𝐴𝜀𝑆𝑖 + 𝑁𝐷𝜀𝑒𝑠𝑙
. (7)
𝑉𝑏𝑖 = 𝑎𝑏𝑠(𝜑𝑒𝑠𝑙 − 𝜑𝑆𝑖) , (8)
where 𝑁𝐷 is the doping density in ESL, 𝑉𝑏𝑖 is the built in
potential between ESL and c-Si, 𝜀𝐸𝑆𝐿, 𝜀𝑆𝑖 and 𝜑𝑒𝑠𝑙, 𝜑𝑆𝑖 are
the dielectric constants and work functions of ESL, c-Si
respectively.
Equations (1) – (8) describe the electrostatics of the device
and a self-consistent solution of the same predicts the
variation of open circuit voltage. It can be used to estimate
the effect of band offset (which affects the 𝜑𝑒𝑠𝑙, see eq. 8),
effect of interface traps, doping density, and dielectric
constant of CS layers on the device performance. The values
of various parameters used in this study are provided in
Table 1. As our aim is to study the effect of the above
mentioned parameters in the extraction of photo-generated
carriers, the barrier for blocking the carriers at the respective
selective layers is kept large and fixed. For example, at the
c-Si/ESL interface the 𝛥𝐸𝑐 is varied while the barrier for
hole injection from c-Si to ESL is kept fixed (see Fig. 1).
Since the number of critical parameters that affect the
performance is large, we first focus on the effect of band
offset and interface traps (see Fig. 2) and identify the
physical mechanism that control the performance. Once this
is achieved, the insights can be readily extended to other
3
parameters like doping density and dielectric constant as
well.
Fig. 2: The effect of the 𝛥𝐸𝑐 on Solar cell performance. (a)
Variation of 𝑉𝑜𝑐 with 𝛥𝐸𝑐. (b) Comparison of the photo-
generated carrier extraction rates at ESL/Si
interface
(asymptotic analysis at short circuit conditions) with the bulk
recombination rates.
Here,
Figure 2 (a) shows the variation of 𝑉𝑜𝑐 with 𝛥𝐸𝑐 in the
presence and absence of interface traps at ESL/c-Si
assume 𝜏𝑆𝑅𝐻 = 1𝑚𝑠, 𝐵𝑅𝑅 =
interface.
1.1 ×−14 𝑐𝑚3𝑠−1, 𝐶𝐴𝑢𝑔𝑒𝑟(𝑛,𝑝) ≈ 10−31𝑐𝑚6𝑠−1 -
these
parameters are comparable to that of the best efficiency
devices reported[20]. 𝑉𝑜𝑐 is estimated by self consistent
solution of equations (1)-(8) with the assumption that the
we
band bending in Si is not larger than 2 × (𝐸𝐹𝑝 − 𝐸𝑣) +
𝑘𝑇
𝑞
,
which corresponds to strong inversion at ETL/c-Si interface.
the presence of
There are several interesting insights in Fig. 2 (a). The
𝑉𝑜𝑐 in the absence of interface traps depends only on the
bulk lifetime and hence does not vary with 𝛥𝐸𝑐. However,
traps, 𝑉𝑜𝑐 is minimum
in
near 𝛥𝐸𝑐 = 0𝑒𝑉 and it reaches a maximum for a particular
conduction band offset 𝛥𝐸𝑐. This is a rather surprising result
as 𝛥𝐸𝑐 = 0𝑒𝑉 is supposed to give the best performance.
This interesting result is further explored through detailed
numerical simulations.
interface
b) Effect of 𝛥𝐸𝑐 on 𝐽𝑠𝑐 and 𝐹𝐹: The analytical results in
previous section indicate that the achievable 𝑉𝑜𝑐 is expected
to be the least for perfect band alignment due to increased
interface recombination. The results also indicate that there
should be a minimum band offset of around 0.2-0.4eV for
optimal 𝑉𝑜𝑐. However, this analysis still does not predict the
trends for efficiency unless accounted for 𝐽𝑠𝑐 and 𝐹𝐹 – both
depend on the collection efficiency of carriers at respective
electrodes. The bias dependent collection efficiency can be
estimated using the steady state continuity equation given
by
𝐽
𝑞
= 𝐺𝑤𝑠𝑖 − 𝑅 , (9)
where, 𝐽 is the current flowing out through the ESL, G is the
carrier generation rate, 𝑤𝑠𝑖 is
thickness,
and 𝑅 is
the device. Note
the net recombination
the substrate
in
that
𝐽
𝑞
denotes the escape rate of electrons through the ESL.
The diffusion component
𝛥𝐸𝑐
𝑘𝑇 ; where 𝐷 is
by 𝜉𝑑𝑖𝑓𝑓𝑢𝑠𝑖𝑜𝑛 =
for escape
𝑛𝑠𝑒−
𝐷
𝑤𝐸𝑆𝐿
trends of 𝑉𝑜𝑐 as predicted by the analytical relationship
between 𝐹𝐹 and 𝑉𝑜𝑐[21]. For large 𝛥𝐸𝑐, the 𝐹𝐹 decreases
due to the reduction in collection efficiency of photo-
generated carriers (trends similar to the short circuit
conditions, see Fig. 2b).
indeed,
The analysis in this section predicts that the performance of
a carrier selective solar cell is not at its optimal value for
perfect band alignment –
the best device
performance could be at an optimal 𝛥𝐸𝑐, which in turn
could depend on the interface recombination as well.
Indeed, the same model predicts that the performance
improves with increase in the doping density and dielectric
constant of the CS material (results not shown but these
trends can be anticipated from eq. 7).
rate
is given
the diffusion
constant, 𝑤𝐸𝑆𝐿 is the thickness of ESL, and 𝑛𝑠 is the electron
density at the ESL/c-Si interface under illumination. The
𝛥𝐸𝑐
drift term for escape rate is given by 𝜉𝑑𝑟𝑖𝑓𝑡 = 𝜇𝜖𝑛𝑠𝑒−
𝑘𝑇 ,
where 𝜇 is the mobility of electron in ESL, 𝜖 is the electric
field in the ESL.
The carrier collection efficiency could be estimated by
comparing the escape rates with the net generation rate. For
this, accurate estimate is required for the interface carrier
density 𝑛𝑠. Note that the 𝑛𝑠 predicted by eq. (4) is valid only
in open circuit conditions and hence is not appropriate for
short circuit conditions. Further, accurate estimates are
required for the electric field in the ESL as well. As an
asymptotic analysis, here we assume that 𝜖 =
(𝑉𝑏𝑖−𝑉𝑎𝑝𝑝)ESL
𝑤𝐸𝑆𝐿
,
which is the maximum possible electric field in ESL and
hence the best chance for escape. Details on the estimation
of bias dependent 𝑛𝑠 are provided in the appendix B.
The variation of asymptotic 𝜉𝑑𝑖𝑓𝑓𝑢𝑠𝑖𝑜𝑛 and 𝜉𝑑𝑟𝑖𝑓𝑡 at zero bias
as a function of 𝛥𝐸𝑐 is given in Fig. 2 (b). The interface
recombination term is absent in this case as 𝑛𝑠𝑝𝑠 =
2 at 𝑉𝑎𝑝𝑝 = 0. The figure predicts some interesting trends
𝑛𝑖
– (a) 𝐽𝑠𝑐 is expected to be not affected for small 𝛥𝐸𝑐 as the
collection probabilities (i.e., the drift and the diffusion
terms) are much larger than the bulk recombination
probability, and (b) the collection probabilities become
comparable to that of recombination for larger 𝛥𝐸𝑐 (i.e.,
around 0.3-0.4eV), and hence 𝐽𝑠𝑐 is expected to decrease
as 𝛥𝐸𝑐 increases.
The variation of 𝐹𝐹 with 𝛥𝐸𝑐 is rather difficult to anticipate.
For small 𝛥𝐸𝑐, we expect that the 𝐹𝐹 might follow the
4
III.
NUMERICAL SIMULATIONS
To further explore the predictions from the analytical model,
we performed detailed numerical simulations
(self-
consistent solution of Poisson and drift diffusion equations).
Table 1 provides the list of parameters used in simulations.
The effect of band discontinuity between c-Si and ESL in
the presence and absence of traps is explored using
numerical simulations. For this we first study the effect of
conduction band offset 𝛥𝐸𝑐 at the ESL/Si interface while
keeping 𝛥𝐸𝑣 = 0eV for HSL. Uniform density of interface
traps was assumed at the ESL/c-Si interface. Later the effect
of band offsets at Si/HSL interface is also discussed.
Figure 3a and 3b shows the energy band diagram near the
ESL at short circuit conditions for 𝛥𝐸𝑐 = 0𝑒𝑉 and 𝛥𝐸𝑐 =
0.4𝑒𝑉, respectively. It is evident that the band bending in c-
Si is more in the case for 𝛥𝐸𝑐 = 0.4𝑒𝑉. This large band
bending causes an inversion region near the c-Si/ESL
interface. Fig. 3c and 3d show the variation in the carrier
densities with bias at the ESL/c-Si interface in the c-Si edge
for 𝛥𝐸𝑐 = 0𝑒𝑉 and 𝛥𝐸𝑐 = 0.4𝑒𝑉, respectively. Due to the
increase in inversion charge for 𝛥𝐸𝑐 = 0.4𝑒𝑉, the value
of 𝑛𝑠 is more and the value of 𝑝𝑠 is less compared to the
corresponding values for 𝛥𝐸𝑐 = 0𝑒𝑉. These results indicate
that the band bending at c-Si interface can significantly
influence the interface recombination. For example, the
minority carrier density, which dictates the rate of trap
assisted recombination, is significantly lower for the case
with large 𝛥𝐸𝑐. As a result, the 𝑉𝑜𝑐 is expected to increase
with 𝛥𝐸𝑐. Indeed, the effect of a band discontinuity between
ESL/c-Si
field effect
passivation[22] as one type of carriers is prevented from
is very
that of
similar
to
reaching the interface thus reducing the recombination.
Accordingly, the interface recombination term,
𝑛𝑠𝑝𝑠𝑐𝑝𝑠
(𝑛𝑠+𝑛1)
is
maximum and 𝑉𝑜𝑐 is least for 𝛥𝐸𝑐 = 0𝑒𝑉. The effect of
negative values of 𝛥𝐸𝑐 on the device electrostatics is
provided in the appendix C.
in
a
to
the
device
reduction
interface
Fig. 4: The effect of 𝛥𝐸𝑐 on J0 and ideality factor in the dark
IV with interface traps (1012cm-2eV-1). It indicates that J0 and
ideality factor improves as the band offset varies from 𝛥𝐸𝑐 =
0𝑒𝑉 conditions due
interface
recombination.
Fig. 5 shows the effect of discontinuity in the conduction
band between ESL and c-Si on the solar cell performance.
To explore the details of the effect of interface traps, here
we consider three cases: (a) a device with no interface traps,
(b)
trap
with
density Dit = 1011 𝑐𝑚−2𝑒𝑉–1 and
a device with
interface trap density Dit = 1012 𝑐𝑚−2𝑒𝑉–1. Fig. 5a shows
the variation
effect of
negative 𝛥𝐸𝑐 is also taken in to account. The results are
similar to the predictions from the analytical model,
however the absolute values of 𝑉𝑜𝑐 are different in the two
schemes. This discrepancy is due to the inaccuracy in
analytical model related to the electrostatics of the device.
In the absence of any interface traps, the 𝑉𝑜𝑐 is independent
of any band offset as 𝑉𝑜𝑐 depends only on bulk carrier
lifetime. As
is
increased, 𝑉𝑜𝑐 decreases as the effective lifetime decreases.
In the presence of traps the variation in 𝑉𝑜𝑐 is almost
symmetric with 𝛥𝐸𝑐. Minimum value of 𝑉𝑜𝑐 is at 𝛥𝐸𝑐 =
0𝑒𝑉 and it increases in both the directions.
in 𝑉𝑜𝑐 with 𝛥𝐸𝑐. Here
interface
density
trap
the
(c)
the
interface
c-Si/ESL
(numerical
Fig. 3: The effect of 𝛥𝐸𝑐 on band bending and carrier densities
at
simulations, under
illumination). Parts (a) and (b) show the energy band diagram
for 𝛥𝐸𝑐 = 0𝑒𝑉 and 𝛥𝐸𝑐 = 0.4𝑒𝑉, respectively, at short circuit
conditions. Parts (c, d) show the variation in interface carrier
densities 𝑛𝑠 and 𝑝𝑠 with bias for 𝛥𝐸𝑐 = 0𝑒𝑉and 𝛥𝐸𝑐 = 0.4𝑒𝑉,
respectively.
is close
The above insights are well supported by the trends
related to dark IV characteristics as well. For example, the
effect of 𝛥𝐸𝑐 on the dark IV characteristics in the presence
of interface trap density of 1012 𝑐𝑚−2𝑒𝑉–1 is shown in Fig.
to 2 at 𝛥𝐸𝑐 = 0𝑒𝑉 which
4. Ideality factor
correspond to significant recombination due to the interface
traps. Ideality factor decreases with 𝛥𝐸𝑐 and reaches a value
close to 1 near 𝛥𝐸𝑐 = ±0.4𝑒𝑉. This indicates a reduction in
the detrimental effect of interface traps at larger values of
𝛥𝐸𝑐 as discussed before. Note that 𝐽0 follows the trend of the
ideality factor. 𝐽0 has the maximum value at 𝛥𝐸𝑐 = 0𝑒𝑉 as a
result of significant interface recombination - which is also
confirmed by carrier densities, 𝑛𝑠 and 𝑝𝑠 in Fig. 3. We also
notice that the 𝑉𝑜𝑐 variation with 𝛥𝐸𝑐 can be accurately
predicted with this ideality factor and 𝐽0 and the details are
provided in the appendix D.
5
the 𝐹𝐹 follows
the 𝑉𝑜𝑐 trends for both
traps, 𝐹𝐹 is not affected
Fig. 5c shows the variation in 𝐹𝐹 with 𝛥𝐸𝑐. Without any
till 𝛥𝐸𝑐 = 0.4𝑒𝑉.
interface
Beyond 𝛥𝐸𝑐 = 0.4𝑒𝑉, over the barrier transport of electrons
from c-Si to ESL is affected at maximum power point
conditions and hence gets reflected in 𝐹𝐹. The results show
that the presence of interface traps significantly affects
the 𝐹𝐹 for lower values of 𝛥𝐸𝑐. Specifically, under such
conditions,
the
negative and positive values of 𝛥𝐸𝑐, as predicted by the
empirical relationship connecting 𝐹𝐹 with 𝑉𝑜𝑐[21].
Finally, the solar cell efficiency (see Fig. 5d) also follows
the trends of 𝑉𝑜𝑐 and has its minimum at 𝛥𝐸𝑐 = 0𝑒𝑉. The
performance improves in both the directions, till over the
barrier transport is affected and the efficiency becomes
limited by 𝐹𝐹 and 𝐽𝑠𝑐. Accordingly,
the best device
performance is observed at 𝛥𝐸𝑐 ≈ 0.4𝑒𝑉.
Fig. 6: The effect of the 𝛥𝐸𝑉 at Si/HSL interface on the
performance parameters - (a)𝑉𝑜𝑐, (b) 𝐽𝑠𝑐, (c) 𝐹𝐹, and (d)
efficiency of CS Si solar cells for different 𝐷𝑖𝑡 (𝑐𝑚−2𝑒𝑉–1).
Here both 𝑉𝑜𝑐 and 𝐽𝑠𝑐 is affected by the change in the
passivation quality at the c-Si/HSL interface due to variation
in 𝛥𝐸𝑉.
b) Effect of band discontinuity between HSL and c-Si:
Figure 6 shows the effect of 𝛥𝐸𝑉 between c-Si and HSL in
the presence of interface traps on solar cell performance
parameters. As before, here we assume ideal conditions at
ESL/c-Si interface (i.e., zero band offset and no traps). Fig.
6a and 6b shows the variation of 𝑉𝑜𝑐 and 𝐽𝑠𝑐, respectively,
with 𝛥𝐸𝑉. While the change in 𝑉𝑜𝑐 is very similar to that
observed with ESL/c-Si band offset (see Section III(a)),
surprisingly,
in
the 𝐽𝑠𝑐 trends. We observe that the 𝐽𝑠𝑐 varies with 𝛥𝐸𝑉 in
differences
significant
there
are
6
indicates
that 𝑉𝑜𝑐 varies
Fig. 5: The effect of the 𝛥𝐸𝑐 on performance parameters -
(a) 𝑉𝑜𝑐, (b) 𝐽𝑠𝑐, (c) 𝐹𝐹, and (d) efficiency of CS Si solar
cells for different 𝐷𝑖𝑡 (𝑐𝑚−2𝑒𝑉–1). Note that the trends are
broadly consistent with the analytical model and indicates
that, surprisingly, the solar cell performance is ideal for a
non-zero band offset
Figure 5a
linearly
with 𝛥𝐸𝑐 before it saturates. This can be understood in
simple terms as follows: As shown in Fig. 3, the effect
of 𝛥𝐸𝑐 is to increase the electron concentration and decrease
the hole concentration at the interface as compared to the
bulk concentrations. Accordingly, the electron density in c-
Si at the ESL/c-Si interface is significantly greater than the
hole density at the interface and that the excess electron
density at the interface is significantly greater than the dark
i.e., 𝑛𝑠 ≫ 𝑝𝑠, 𝑛1and
electron density at
𝑛𝑠~𝛥𝑛𝑠. Assuming uniform distribution of traps, 𝑠 in eq.(3)
can be approximated using eq.(4) as
interface,
almost
the
𝑠 =
𝐷𝑖𝑡𝑝𝑠𝑐𝑝𝑠 ∫ 𝑑𝐸
𝐸𝑐
𝐸𝑣
𝑛𝑠
=
𝐷𝑖𝑡𝑝𝑏𝑢𝑙𝑘𝑒−
2𝛥𝐸𝑐
𝑘𝑇 𝑐𝑝𝑠 ∫ 𝑑𝐸
𝐸𝑐
𝐸𝑉
𝑛𝑏𝑢𝑙𝑘
. (10)
𝑤
𝑠
, then eq. (1) with eq. (10) predict a linear
If 𝜏𝑒𝑓𝑓 ≈
variation of 𝑉𝑜𝑐 with 𝛥𝐸𝑐, as observed in Fig. 5a. Note that
similar analysis is valid for negative values of 𝛥𝐸𝑐 as well.
Variation of 𝐽𝑠𝑐 with 𝛥𝐸𝑐 is shown in Fig. 5b. As seen in the
analytical model 𝐽𝑠𝑐 is not affected till a particular value
of 𝛥𝐸𝑐 is reached. After that the over the barrier transport of
carriers to ESL decreases with increase in 𝛥𝐸𝑐. The
collection of electrons is not typically affected with
negative 𝛥𝐸𝑐, as the band bending at short circuit conditions
is large enough (Fig. 4a, 4c), and hence there is no effect of
interface traps on 𝐽𝑠𝑐 for negative 𝛥𝐸𝑐 .
contrast to the trends for ESL/Si interface (see Section IIIa).
These puzzling trends are due to the distinct nature of
ESL/c-Si and c-Si/HSL junctions. While the former is a PN
junction, the latter is a PP+ junction. Accordingly, the band
bending in c-Si is more at the ESL/c-Si junction than the c-
Si/HSL junction. This reduction in band bending increases
the recombination loss at c-Si/HSL interface which reduces
the collection efficiency of holes and hence the 𝐽𝑠𝑐.
Fig. 7: The effect of 𝛥𝐸𝑣 on carrier densities near HSL. Parts (a,
b) show the energy band diagram for 𝛥𝐸𝑣 = 0𝑒𝑉 and 𝛥𝐸𝑣 =
0.4𝑒𝑉 respectively at short circuit conditions. Parts (c, d) show
the variation in interface carrier densities 𝑛𝑠 and 𝑝𝑠 with bias
for 𝛥𝐸𝑣 = 0𝑒𝑉 and 𝛥𝐸𝑣 = 0.4𝑒𝑉 respectively.
Figure 7 shows the band diagram and carrier densities at
Si/HSL junction for two different conditions. It is evident
that there is negligible band bending in c-Si even for a large
band offset of 0.4eV (compare Fig. 7a and 7b). Further, Fig.
7c shows that at short circuit conditions, the 𝑛𝑠 and 𝑝𝑠 differ
by approximately 2 orders of magnitude for 𝛥𝐸𝑣 = 0𝑒𝑉.
However, for 𝛥𝐸𝑣 = 0.4𝑒𝑉, 𝑛𝑠 and 𝑝𝑠 differ by 5 orders of
magnitude at short circuit conditions (see part d). Thus the
recombination on 𝐽𝑠𝑐 reduces with
effect of
for 𝛥𝐸𝑣 >
increase
0.5𝑒𝑉 due to the reduction in efficiency of holes going over
the barrier to the HSL. Fig. 6c and 6d shows the variation
of 𝐹𝐹 and efficiency with 𝛥𝐸𝑣. Due to the smaller band
bending in c-Si near the HSL, the effect of interface traps is
more at the c-Si/HSL interface compared to ESL/c-Si
interface, as shown by the lower values of efficiency for the
corresponding values of band discontinuity.
in 𝛥𝐸𝑣. Further
the 𝐽𝑠𝑐 decreases
interface
7
IV.
IMPLICATIONS
simulations
show
that
Our numerical
interface
engineering is very crucial for Si based carrier selective
solar cells. Indeed, for similar band offsets, the presence of
traps is more detrimental at the selective layer that extracts
the majority carrier. For example, Figs. 5 and 6 indicate that
traps at HSL/c-Si interface (where holes, the majority
carriers for p-substrate, are collected) reduce the efficiency
quite significantly as compared to the same trap density at
ESL/c-Si interface (where electrons, the minority carriers,
are collected). Note that similar conclusions will hold good
for n-type substrates as well, as the above effect is only
influenced by the amount of band bending in c-Si. This has
interesting implications on the choice of materials for Si
based carrier selective solar cells. While the presence of a
junction and hence the associated band bending allows
considerable freedom in the choice of selective layer to
extract
layer for
extraction of majority carriers should be chosen carefully
with near perfect
interface passivation properties.
Accordingly, among the various choices, we speculate that
a-Si based selective layers might be the most promising to
extract the majority carrier (as a-Si could provide excellent
interface passivation), while many other materials could be
successful to extract the minority carriers.
the minority carriers,
the selective
Finally, our results indicate that the eventual performance
of CS Si solar cells is dictated by the extent of band bending
in c-Si. This effect is very similar to the field effect
passivation of interface traps. We find that band offsets
between CS material and c-Si play a significant role in
reducing the interface recombination. As such many other
parameters could also influence the band bending in Si. For
example, the doping of CS layers can significantly affect the
band bending in Si. Similarly, the dielectric constant of CS
layers also has a non-intuitive effect on the band bending.
Specifically, large doping or dielectric constant of CS
results in an increased band bending in c-Si and hence are
helpful to reduce interface recombination (also, as predicted
by our analytical model, see Section II). These insights are
also supported by detailed numerical simulations provided
in appendix E (see Fig. 11). As such, band discontinuity,
doping and dielectric constant of CS materials are the
critical parameters
interface
recombination and hence the efficiency of Si based carrier
selective solar cells. Further, this information allows us to
compare the promises of various CS materials like a:Si
TiO2 (𝛥𝐸𝑐~ − 0.05𝑒𝑉, 𝜀~85),
(𝛥𝐸𝑐~0.3𝑒𝑉, 𝜀 = 11.9),
and ZnO (𝛥𝐸𝑐~ − 0.6𝑒𝑉, 𝜀~9)[11], [16], [23] as ESL. For
that could affect
the
similar doping and Dit, our results indicate that a:Si might be
the optimal choice and followed by ZnO. TiO2 has the
drawback of almost perfect band alignment; however has
the advantage of large dielectric constant. These trends
indicate that a-Si based carrier selective contacts could
continue to yield the best performance as both the ESL and
HSL (see section IIIb also) – a conclusion also partially
supported by the excellent efficiencies achieved by HIT
solar cells[24]. Future exploration of new CS materials can
be immensely benefitted through a quantitative evaluation
of material parameters (band offset, doping density,
dielectric constant, and interface trap density) as detailed in
this manuscript.
electron affinity) of ESL varies with the corresponding
band offset used in each simulation. Accordingly, in our
simulations the ESL band gap varies from 2.8eV to 4eV,
which is comparable to the band gap of TiO2 (~3.4eV).
Similar arguments hold good for HSL as well. For ease of
analysis, we have used same dielectric constant (6.215) for
both ESL and HSL. However, many materials could have
large dielectric constants (like TiO2) and the effect of large
dielectric constant is explored
in appendix E (also
mentioned in Section IV of main text). We consider
uniform distribution of traps as the interface of CS layer
and Si. The capture cross section of these traps was
assumed as 10−16cm−2. The rest of the parameters are
provided in the table below.
V.
CONCLUSIONS
the performance. Otherwise, for not so
To summarize, here we addressed the effect of CS
material properties on the solar cell performance. We
developed an analytical model to evaluate the effect of CS
material parameters on the eventual efficiency and the same
was validated using detailed numerical simulations.
Curiously, we found that the optimal band alignment
depends on the interface quality. If the interface quality is
very good, then the efficiency is limited by over the barrier
transport of carriers and hence small band offsets do not
affect
ideal
conditions at the interface, a band offset of around 0.2eV-
0.4eV provides sufficient band bending to reduce the effect
of interface recombination, thus improving the performance.
In addition, our results show that the need for excellent
interface passivation
the majority carrier
extraction layer than at the minority carrier extraction layer.
Further, we find that both the doping and the dielectric
constant of the CS material have a similar effect on the
performance. These interesting insights could be of broad
interest
the selection of
appropriate materials as carrier selective layers.
is more at
to
the community
towards
Parameter
Nc(cm-3)
Nv(cm-3)
Mobility(𝑐𝑚2𝑉−1𝑠−1
(n, p))
τ SRH (s)
Radiative
Recombination
coefficient (𝑐𝑚3𝑠−1)
Auger Coefficients
(𝑐𝑚6𝑠−1) (n,p)
Doping(cm-3)n/p
c-Si
ESL
HSL
3.23 × 1019
2.5 × 1020
2.5 × 1020
1.83 × 1019
2.5 × 1020
2.5 × 1020
1417, 470.5
20, 2
10-3
10-6
20, 2
10-6
1.1 ×
10−14[25]
1 × 10−31,
0.79 ×
10−31[26]
p - 1017
n - 1017
p - 1017
Table. 1: Parameters used in numerical simulations.
B. Estimation of ns : The interface carrier concentrations
at the ESL/c-Si interface are estimated as follows. The
electron density in c-Si at the ESL interface, ns[27], is
estimated using the formula,
𝑞𝑉𝑠𝑖
𝑘𝑇
𝑛𝑖
2𝑒
𝑝𝑠
𝑛𝑠 =
. (11)
VI.
APPENDIX
Here ps, the hole density in c-Si at the ESL interface is
estimated after finding the band bending in c-Si as given
below using Poisson's equation. Fig. 8 shows the notations
used for the depletion edges at ESL/c-Si interface.
A. Parameters used in simulations: To study the band
offset effects, 𝛥𝐸𝑐 at the ESL/c-Si interface is varied
from −0.6𝑒𝑉 to +0.6𝑒𝑉, while the barrier for holes is kept
fixed (2.28eV). At the c-Si/HSL interface, 𝛥𝐸𝑣 is varied
from −0.2𝑒𝑉 to +0.5𝑒𝑉, while the barrier for electrons is
kept fixed (2.28eV). As a result, the band gap (and also the
8
𝑉𝑠𝑖(𝑥1) =
2
−𝜌𝑠𝑖𝑥1
2𝜀𝑠𝑖
. (16)
For depletion region in ESL, the potential is given by,
𝑉𝐸𝑆𝐿(𝑥) =
−𝜌𝐸𝑆𝐿𝑥2
2𝜀𝐸𝑆𝐿
− 𝑐2𝑥 . (17)
At 𝑥 = 𝑥2 , the potential is given by,
𝑉𝐸𝑆𝐿(𝑥2) =
2 − 𝑥1
2)
−𝜌𝐸𝑆𝐿(𝑥2
2𝜀𝐸𝑆𝐿
− 𝑐2(𝑥2 − 𝑥1) , (18)
Fig. 8: Depletion region in CS Si solar cell at the ESL/c-Si
interface. The edge of the depletion region in c-Si is
denoted by x=0 while x1 is the ESL/c-Si interface and x2 in
the edge of ESL.
Poisson's equation[27] is given by,
where, 𝑥2 = 𝑥1 + 𝑤𝐸𝑆𝐿 .
∇𝜉 =
𝜌
𝜀
, (12)
Finally, the total potential in ESL and c-Si is related to
applied bias by the relation,
where 𝜉 is the electric field, 𝜌 is the charge density, and 𝜀 is
the permittivity.
For the depletion region in c-Si, the electric field follows the
relation,
𝜉𝑠𝑖(𝑥) =
𝜌𝑠𝑖𝑥
𝜀𝑠𝑖
+ 𝑐1 , (13)
where 𝜉𝑠𝑖, 𝜌𝑠𝑖 and 𝜀𝑠𝑖 are the electric field, the charge density
and the permittivity, respectively in c-Si.
Since the electric field vanishes at the depletion edge, x=0,
𝑐1 reduces to zero. For the depletion region in ESL, the
electric field is given by,
𝜉𝐸𝑆𝐿(𝑥) =
𝜌𝐸𝑆𝐿𝑥
𝜀𝐸𝑆𝐿
+ 𝑐2 , (14)
where 𝜉𝐸𝑆𝐿, 𝜌𝐸𝑆𝐿 and 𝜀𝐸𝑆𝐿 are the electric field, the charge
density and the permittivity, respectively in ESL.
𝑉𝑏𝑖 − 𝑉𝑎𝑝𝑝 = 𝑉𝑒𝐸𝑆𝐿(𝑥2) + 𝑉𝑠𝑖(𝑥1) . (19)
Using equations (16)-(19), the value of 𝑥1can be estimated
and then using eq. (16) the voltage drop in c-Si is obtained.
Using the voltage drop in c-Si 𝑝𝑠 is estimated as given
below,
𝑝𝑠 = 𝑝𝑏𝑢𝑙𝑘𝑒
−𝑞𝑉𝑠𝑖
𝑘𝑇 , (20)
where 𝑝𝑏𝑢𝑙𝑘 is the bulk majority carrier concentration in c-
Si.
Finally eq. (11) is used to estimate the value of electron
density at the interface.
At 𝑥 = 𝑥1, the ESL/c-Si interface, using eq. (13) the electric
field is determined as 𝜉𝑠𝑖(𝑥1) =
. Equating this to eq.
𝜌𝑠𝑖𝑥1
𝜀𝑠𝑖
(14) at 𝑥 = 𝑥1, 𝑐2 is estimated as 𝑐2 = (
𝜌𝑠𝑖
𝜀𝑠𝑖
−
𝜌𝐸𝑆𝐿
𝜀𝐸𝑆𝐿
)𝑥1.
For depletion region in c-Si, the potential follows the
relation
𝑉𝑠𝑖(𝑥) =
−𝜌𝑠𝑖𝑥2
2𝜀𝑠𝑖
. (15)
At 𝑥 = 𝑥1, the potential is given by,
Fig. 9: The effect of negative values of 𝛥𝐸𝑐 on band bending
and carrier densities at c-Si/ESL interface. Parts (a) and (b)
show the energy band diagram for 𝛥𝐸𝑐 = 0𝑒𝑉 and 𝛥𝐸𝑐 =
−0.3𝑒𝑉, respectively, at short circuit conditions. Parts (c, d)
show the variation in interface carrier densities 𝑛𝑠 and 𝑝𝑠 with
bias for 𝛥𝐸𝑐 = 0𝑒𝑉and 𝛥𝐸𝑐 = −0.3𝑒𝑉, respectively.
9
of
The
effect
negative 𝚫𝐄𝐜 on
C.
device
electrostatics: Fig. 9a and 9b shows the energy band
diagram near the ESL at short circuit conditions for 𝛥𝐸𝑐 =
0𝑒𝑉 and 𝛥𝐸𝑐 = −0.3𝑒𝑉, respectively. It is evident that the
band bending in c-Si is more in the case for 𝛥𝐸𝑐 = 0𝑒𝑉.
Fig. 9c and 9d show the variation in the carrier densities
with bias at the ESL/c-Si interface in the c-Si edge
for 𝛥𝐸𝑐 = 0𝑒𝑉 and 𝛥𝐸𝑐 = −0.3𝑒𝑉, respectively. Due to the
decrease in band bending for 𝛥𝐸𝑐 = −0.3𝑒𝑉, the value
of 𝑛𝑠 is less and the value of 𝑝𝑠 is more compared to the
corresponding values for 𝛥𝐸𝑐 = 0𝑒𝑉. As explained in
section III(a) of the paper, this acts as field effect
passivation and decreases
trap assisted
recombination at the interface, for large negative value
of 𝛥𝐸𝑐. As a result, the 𝑉𝑜𝑐 is expected to increase with
negative value of 𝛥𝐸𝑐.
the rate of
Fig. 10: Comparison of 𝑉𝑜𝑐 obtained from simulated light IV
characteristics (symbols) and estimated from dark IV using eq.
21 (solid line).
from
D. The estimation of 𝑽𝒐𝒄
the dark
characteristics: The dark characteristics show that the
ideality factor and 𝐽0 are maximum at 𝛥𝐸𝑐 = 0𝑒𝑉 and that
both of them decrease in either direction from 𝛥𝐸𝑐 = 0𝑒𝑉.
Fig. 10 shows that a very good estimate of 𝑉𝑜𝑐 is obtained
using 𝐽0 and
ideality factor from dark characteristics.
Here 𝑉𝑜𝑐 was estimated using,
𝑉𝑜𝑐 = 𝜂
𝑘𝑇
𝑞
ln
𝐽𝑠𝑐
𝐽0
, (21)
where 𝜂 is the ideality factor.
with ΔEc on the solar cell performance parameters. The
effect of ΔE𝑐 is explained in detail in Section III(a) of the
paper. Fig. 11a shows the variation of Vocwith ΔEc. It shows
that Voc improves with the increase in doping and dielectric
constant in the ESL for the corresponding positive values
of ΔEc. The effect of increasing both the doping and the
dielectric constant in the ESL is to increase the band
bending in the c-Si region near the ESL. The increase in
band bending improves the field effect passivation at the c-
Si/ESL
the overall
performance of the CS Si solar cell. Similar results are
observed for HSL too.
interface and hence
improves
Fig. 11: The effect of the doping and dielectric constant in
for 𝐷𝑖𝑡 =
ESL on solar cell performance parameters
1012𝑐𝑚−2𝑒𝑉–1. Case (i) has a ESL doping of 1017𝑐𝑚−3 and
dielectric constant of 6.215, case (ii) has a ESL doping
of 1017𝑐𝑚−3 and dielectric constant of 85, and case (iii) has a
ESL doping of 1018𝑐𝑚−3 and dielectric constant of 6.215.
The results indicate that the passivation quality increases with
doping and dielectric constant for the same positive value
of 𝛥𝐸𝑐.
Acknowledgements: This paper is based upon work
supported in part by the Solar Energy Research Institute for
India and the United States (SERIIUS), funded jointly by
the U.S. Department of Energy (under Subcontract DE-
AC36-08GO28308) and the Govt. of India's Department of
Subcontract
Science
IUSSTF/JCERDC-SERIIUS/2012). The
also
acknowledge Center of Excellence in Nanoelectronics
(CEN) and National Center for Photovoltaic Research and
Education (NCPRE), IIT Bombay
for computational
facilities.
Technology
authors
(under
and
E. Effect of doping and dielectric constant in the SL:
Fig. 11 shows the effect of doping and dielectric in ESL
10
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
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[27]
12
|
1909.07805 | 1 | 1909 | 2019-09-17T13:52:23 | Suppressing parametric instabilities in LIGO using low-noise acoustic mode dampers | [
"physics.app-ph",
"astro-ph.IM"
] | Interferometric gravitational-wave detectors like LIGO need to be able to measure changes in their arm lengths of order $10^{-18}~$m or smaller. This requires very high laser power in order to raise the signal above shot noise. One significant limitation to increased laser power is an opto-mechanical interaction between the laser field and the detector's test masses that can form an unstable feedback loop. Such parametric instabilities have long been studied as a limiting effect at high power, and were first observed to occur in LIGO in 2014. Since then, passive and active means have been used to avoid these instabilities, though at power levels well below the final design value. Here we report on the successful implementation of tuned, passive dampers to tame parametric instabilities in LIGO. These dampers are applied directly to all interferometer test masses to reduce the quality factors of their internal vibrational modes, while adding a negligible amount of noise to the gravitational-wave output. In accordance with our model, the measured mode quality factors have been reduced by at least a factor of ten with no visible increase in the interferometer's thermal noise level. We project that these dampers should remove most of the parametric instabilities in LIGO when operating at full power, while limiting the concomitant increase in thermal noise to approximately 1%. | physics.app-ph | physics |
Suppressing parametric instabilities in LIGO using low-noise acoustic mode dampers
S. Biscans,1, 2 S. Gras,1, ∗ C.D. Blair,3 J. Driggers,4 M. Evans,1 P. Fritschel,1 T. Hardwick,5 and G. Mansell4
1LIGO, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
2LIGO, California Institute of Technology, Pasadena, CA 91125, USA
3LIGO Livingston Observatory, Livingston, LA 70754, USA
4LIGO Hanford Observatory, Richland, WA 99354, USA
5Louisiana State University, Baton Rouge, LA 70803, USA
Interferometric gravitational-wave detectors like LIGO need to be able to measure changes in their
arm lengths of order 10−18 m or smaller. This requires very high laser power in order to raise the
signal above shot noise. One significant limitation to increased laser power is an opto-mechanical
interaction between the laser field and the detector's test masses that can form an unstable feedback
loop. Such parametric instabilities have long been studied as a limiting effect at high power, and
were first observed to occur in LIGO in 2014. Since then, passive and active means have been used to
avoid these instabilities, though at power levels well below the final design value. Here we report on
the successful implementation of tuned, passive dampers to tame parametric instabilities in LIGO.
These dampers are applied directly to all interferometer test masses to reduce the quality factors of
their internal vibrational modes, while adding a negligible amount of noise to the gravitational-wave
output. In accordance with our model, the measured mode quality factors have been reduced by at
least a factor of ten with no visible increase in the interferometer's thermal noise level. We project
that these dampers should remove most of the parametric instabilities in LIGO when operating at
full power, while limiting the concomitant increase in thermal noise to approximately 1%.
I.
INTRODUCTION
A. Overview
Interferometric
gravitational-wave
detectors
use
a modified Michelson interferometer
that measures
gravitational-wave strain as a difference in length of
its orthogonal arms, which are made several kilometers
long to increase their strain-to-length conversion. Other
enhancements to the basic Michelson interferometer are
made to increase the conversion of path length change to
optical signal. These include the use of resonant optical
cavities in the long arms to multiply the light phase
change, an input power-recycling mirror that creates
additional resonant buildup of the laser light in the
interferometer, and an output signal-recycling mirror
that broadens the bandwidth of the arm cavities. The
quantum-noise limited sensitivity of the interferometer
is determined by the stored laser power, and, up to a
limit, is improved by increasing the laser power. For the
11 gravitational-wave detections made in their first two
observation runs [1], the Advanced LIGO interferometers
operated with 100-120 kW of power stored in each arm
cavity.
Since the full design sensitivity of Advanced
LIGO calls for 750 kW of arm power [2], higher power
will be required to reach the instruments' full potential.
There are however significant technical challenges
to achieving and maintaining stable operation as the
laser power is increased. One of these involves opto-
mechanical interactions between the stored laser field and
the arm cavities test masses that can form an unstable
∗ [email protected]
feedback loop [3]. Given the high optical power level in
each cavity and the very high mechanical quality factors
(Q-factors) of the test mass vibrational modes ((cid:38) 107),
the process can result in a parametric instability (PI),
in which the cavity optical energy is pumped into a test
mass mechanical mode, which grows exponentially until
the interferometer becomes inoperable.
Since Braginsky et al. [4] identified the phenomenon,
PI have been extensively studied as a limitation for ad-
vanced interferometric gravitational-wave detectors [3, 5 --
9]. A PI was first observed in early operation of the
Advanced LIGO interferometers, where a 15.5 kHz test
mass mode interacted with a third-order transverse op-
tical mode of an arm cavity, exhibiting unstable growth
when the arm power exceeded 25 kW [10]. With 100 kW
of arm cavity power, several modes were potentially un-
stable in each detector.
In the first two observing runs, these unstable modes
were suppressed with one of two techniques. The first
PI was stabilized by shifting the eigenfrequency of the
third-order optical mode to reduce the optical gain at
the mechanical mode frequency [11]. This was done by
thermally decreasing the radius-of-curvature of one of
the cavity test masses, using a non-contacting radiative
heater that surrounds the barrel of each test mass. Un-
stable modes have also been suppressed actively, using
feedback forces applied to the test masses to effectively
reduce their internal mode Q-factors [12].
At full power, approximately 10 modes in each test
mass would be unstable if not otherwise mitigated [10],
and neither of these techniques are expected to be ro-
bust at that level. In the thermal tuning technique, ther-
mally shifting the optical higher-order mode spacing can
decrease the optical gain for some modes, but it will in-
crease the optical gain for other modes that will even-
2
FIG. 1. Overview of the low-noise Acoustic Mode Damper. The AMD can be described as a small damper of mass m attached
to a larger vibrating mass M , as illustrated in the top left. To cover a broader frequency bandwidth, each test mass is equipped
with four different AMDs distributed on the optic's flats, as shown in Fig. A. Each AMD is made of a base, a shunted shear
plate and a reaction mass (Fig. B). The shunted shear plate is used as a lossy tunable spring with a complex stiffness kAM D.
Its polarization direction is oriented perpendicular to the cavity axis to limit thermal noise injection (Fig. C). Finally, the top
face of the base and the entire reaction mass are gold coated for electrical conductivity, assuring current flow between the PZT
plate and the resistor. The bonds with the PZT plate are made of epoxy mixed with graphite nano-particles for conductivity.
A detailed description of AMD components can be found in Table I.
tually become unstable. The active damping approach
becomes complicated in the face of dozens of modes to
damp, some of which are very close in frequency. Each re-
quires a suitable sensing signal and careful signal process-
ing to avoid interactions between modes; it can quickly
become a game of whack-a-mole.
A third approach is to reduce the test mass Q-factors
passively, with the application of some type of damping
mechanism. The challenge of this approach is to pro-
vide adequate damping in the (15-80) kHz band, while
minimally impacting the test mass thermal noise around
100 Hz, in order to preserve the detectors strain sensitiv-
ity. This means the dampers must add negligible mechan-
ical loss at frequencies well below their resonances. Gras
et al. [8] investigated the use of metal rings and coat-
ings applied to the circumference of the test mass, but
they could achieve appreciable damping of the Q-factors
only by adding enough damping material that the test
mass thermal noise was increased significantly. A more
frequency-selective damper was required, which led to
the idea of tuned dampers designed to resonantly damp
modes in critical frequency band of (15-80) kHz [13]. The
prototype acoustic mode damper (AMD) reported in [13]
showed promising performance in terms of mode damp-
ing, but was estimated to more than double the thermal
noise at 100 Hz if applied to the test mass and thus was
also not a practical design.
In this article we present a new design of a much
lower-noise AMD, suitable for application in advanced
gravitational-wave detectors. The basic design of the
Suspension EarsA: TEST MASS WITH ACOUSTIC MODE DAMPERS AMD4 & AMD1AMD3 & AMD2Front FaceB: ACOUSTIC MODE DAMPERSolder jointReaction massResistorWireShear plateEpoxy + GraphiteBaseMkTMmxAMDABCxTMkAMDC: SHUNT SHEAR PLATE AND ITS ORIENTATION45oTest Mass Front FacePolarization directionResistorR+++- - - Strain2mm AMD remains the same as that presented in [13], but
each element of the damper has been modified and opti-
mized to reduce its noise impact. These AMDs have been
applied to all four test masses of both LIGO interferom-
eters. The resulting measured Q-factors are roughly an
order of magnitude smaller than without the dampers,
consistent with our model predictions. The AMDs are en-
abling instability-free operation in the (15-80) kHz band
during Advanced LIGO's third observation run (O3) at
up to 30% of full power. We project that all modes should
remain stable at or close to full power operation in that
frequency band. The estimated degradation of the Ad-
vanced LIGO design strain noise due to the AMDs is at
most 1.0%, and we present a measurement that is con-
sistent with this projection.
B. Parametric Instabilities
The process that leads to PI can be viewed as a closed-
loop feedback mechanism [3] involving interactions be-
tween 3 modes: the fundamental optical mode of the
arm cavity (Hermite-Gaussian TEM00 mode); a higher-
order transverse optical mode of the arm cavity; and an
internal vibrational mode of a test mass. Feedback oc-
curs when the cavity fundamental mode reflects from a
test mass surface that is vibrating at a mechanical eigen-
mode (due merely to thermal excitation, e.g.), scatter-
ing a very small fraction of the fundamental mode into
higher-order optical modes in the cavity. Via radiation
pressure, the beat note of the fundamental and higher-
order optical modes exert a spatially varying force on
the cavity test masses, which oscillates at the mechan-
ical mode frequency. This force can further drive the
amplitude of the mechanical mode, closing the loop. De-
pending on the frequency relationship between the me-
chanical and optical modes, the feedback may be positive
or negative.
The dynamics of this process are commonly described
in terms of the parametric gain R, with R > 1 being
the threshold for instability. The parametric gain for
a mechanical mode m with eigenfrequency fm can be
expressed as:
Rm =
2Parm
πλc
Qm
M f 2
m
∞(cid:88)
n=0
Re[Gn]B2
m,n,
(1)
where Parm is the laser power stored in the cavity, M
is the mass of the test mass, c is the speed of light, λ
is the laser wavelength, and Qm is the Q-factor of the
mechanical mode. The factor Bm,n is the geometrical
overlap between the mechanical mode m and an optical
mode n, and Re[Gn] is the real part of the optical gain for
mode n. The summation is over all higher-order optical
modes which can contribute to the Rm value, though
typically only one is relevant [10].
3
The amplitude of the mode m is governed by an expo-
nential, et/τpi , with the time constant
τpi =
τm
(Rm − 1)
,
(2)
where τm is the natural decay time of the mechanical
mode m in the absence of the opto-mechanical interac-
tion, and is related to the Q-factor as Qm = πτmfm.
For Rm < 1, the time constant is negative and the
mode amplitude decays exponentially, at a rate that may
be longer or shorter than the natural decay time. For
values of Rm > 1, τpi is positive, indicating exponential
growth of the mechanical mode. The parametric gain
scales linearly with Parm and Qm, and the strategy be-
hind the AMD is to lower the Q-factors so that R stays
below unity for all modes.
II. LOW-NOISE ACOUSTIC MODE DAMPER
CONCEPT
Tuned mass damping is a well-established technique for
controlling mechanical vibrations [14 -- 17], and piezoelec-
tric tuned mass dampers are being developed as energy
harvesting devices [18]. Designing tuned dampers for
the test masses of a gravitational-wave detector presents
unique challenges, as they must not only provide broad-
band Q-reduction in the PI band (15-80) kHz, but they
must also preserve the inherently low mechanical loss of
the test mass in the gravitational-wave band to maintain
a low level of thermal noise in that band.
In this section we first describe the AMD and its inter-
action with the test mass with a simple one-dimensional
model in order to illustrate the concept and its feasibility.
Then we show how the specific design is optimized using
a complete finite-element model of the entire system.
A. One-dimensional model of the AMD
The AMD concept is shown in Figure 1.
It consists
of four key components: a base, a single piezoelectric
plate (PZT) shunted with a resistor, a reaction mass and
adhesive bonds used for the AMD assembly as well as for
direct installation on the test masses. Each component
is chosen carefully to limit its associated thermal noise.
The components and their properties are summarized in
Table I and Figure 2.
The main element of the resonator is a piezoelectric
plate, which converts the strain energy of a mechanical
mode into charge. This charge is shunted into a resis-
tor to dissipate the electrical energy as heat. A shunted
PZT is equivalent to a tunable lossy spring which, in con-
junction with the reaction mass, determines the AMD
principal resonances. In a one-dimensional model, corre-
sponding to the PZT being loaded uniaxially with either
a normal or shear stress, the spring constant Kpzt,sh of
a resonant frequency fm. For this system of coupled os-
cillators, reference [13] shows that the resulting Q-factor
of the acoustic mode is:
4
Qm (cid:39) η2
r + (1 − ρ)2
ηrµρ
,
(5)
where ρ = fm/fD, and the mass ratio, µ = m/M , is
assumed to be small.
When the AMD resonance is near that of the test mass,
ηr (cid:29) 1 − ρ and the test mass mode Q-factor is reduced
to Qa (cid:39) ηr/µ. We can thus estimate the size of the
reaction mass required to reduce the Q-factors from (cid:38)
107 to 105 -- 106, sufficient to suppress PIs. With ηr = 0.1
and an acoustic mode modal mass M = 10 kg, this would
require a reaction mass of 1 -- 10 mg. This simple model
turns out to underestimate the required reaction mass,
for a few reasons. One of these is that the AMD cannot
always be placed at the point of maximum displacement
of a given mode, which can be described as an effective
increase of the modal mass by the square of the ratio
of the displacement at the AMD location to that of the
mode's antinode M(cid:48) = M (xmax/xAMD)2. Other factors
include the multiple coupled degrees of freedom of the
AMD and the directional nature of the piezo material,
both of which are covered in the following section.
B. Optimizing the AMD design
Moving beyond this simple model, we need to include
the loss of the PZT material and the loss of the adhesive
used to bond the AMD elements to each other and to
the test mass. These loss factors are not significant for
the acoustic mode damping, but they can be significant
in the thermal noise band and therefore it is important
to choose low-loss materials.
The thermal noise impact of the AMD can be further
limited through careful choice of geometry. One of these
choices takes advantage of the fact that the test mass
acoustic modes will generally exhibit surface displace-
ment in all directions, while thermal noise is determined
largely by motion in the direction of the optic axis. Thus
the PZT plate is mounted with its active direction per-
pendicular to the optic axis. Furthermore, a compressive
PZT plate will always exhibit some charge generation
even for accelerations orthogonal to the poling directions
due to bending of the plate. Therefore the AMD uses
a shear plate PZT, to better isolate the active direction
from the optic axis direction.
Next we consider the size and shape of the reaction
mass. Higher mass will provide more damping of acous-
tic modes, but will also introduce more thermal noise.
The latter can be understood qualitatively by consider-
ing that when the AMD experiences an acceleration, a
higher reaction mass will induce more strain in the lossy
elements of the AMD due to inertia. Thus we choose a
reaction mass as small as possible, but still sufficient for
acoustic mode damping. As shown in Table I, all of the
FIG. 2. Loss factors of the different AMD materials as a func-
tion of frequency. The resistor values are chosen to maximize
the damping efficiency of the AMDs active direction in the PI
band, while limiting the thermal noise re-injection at lower
frequencies.
the shunted PZT is a function of the angular frequency
ω = 2πf :
Kpzt,sh(ω) = Y [1 + iηr(ω)]
S
h
,
(3)
where Y is the Young's modulus of the PZT material
(bulk or shear), S is the surface area and h the height
of the plate. The term ηr is the loss due to the resistor
shunting [19]:
ηr(ω) =
RCωk2
(1 − k2) + (RCω)2 ,
(4)
where R is the shunt resistance and C the capacitance
of the PZT plate. The electromechanical coupling coeffi-
cient k is a constant of the PZT material; its square rep-
resents the percentage of mechanical strain energy which
is converted into electrical energy [20]. The peak value
1 − k2/RC, is tuned with
of ηr, which occurs at ω =
the resistor to the frequency range where most unstable
modes exist. For this model we are neglecting mechanical
loss in the PZT, but it will be included in the next section
when calculating the thermal noise due to the AMD.
√
A reaction mass m is attached to this lossy spring to
create the AMD oscillator, with resonant frequency fD,
which is then attached to the test mass. The AMD and
test mass system can be described as a pair of coupled os-
cillators with a large mass ratio. The test mass acoustic
mode we wish to damp is represented in this model by a
mass M , equal to the modal mass of the acoustic mode,
attached to a fixed reference with a lossless spring, with
10110210310410510-410-310-210-1100Thermal noisebandPI band Component
Base
PZT, PI Ceramic
RM1
RM2
RM3
RM4
Resistor (shunt)
Epoxy, EPO-TEK
Epoxy (conductive)
Material
SiO2, Au
PIC181, Pb(Zr, Ti)O3
Aluminum,
6061-T6,
gold plated
-
TiO2, Al2O3, epoxy
302-3M
302-3M+graphite
a from ref. [21] and [22]
b measured using the test setup described in [23]
c η peak values, see Fig.2.
5
Dimensions
φ 5 mm × 4 mm
3 × 3 × 1.5 mm3
φ 11.5 mm × 2.0 mm
φ 9.75 mm × 1.5 mm
φ 8.5 mm × 1.0 mm
φ 5.5 mm × 0.75 mm
2 × 1.25 × 0.55 mm3
1.0 µm thick
1.2 µm thick
Mass
0.17 g
0.11 g
0.53 g
0.27 g
0.12 g
0.05 g
0.01 g
13 µg
15 µg
Loss factor
1 × 10−6 a
[1.76 − 2.79] × 10−3 b
1 × 10−4 a
1 × 10−4 a
1 × 10−4 a
1 × 10−4 a
0.25 c
38.8 × 10−3 b
38.8 × 10−3 b
TABLE I. List of AMD components and their properties. The reaction masses (RM1 -- 4) are slightly different in size to target
different frequencies, and their shape is non-circular to widen the effective bandwidth of each AMD. The loss factors were either
extracted from literature or directly measured with the mechanical oscillator described in [23].
reaction masses are less than 1 g. In contrast to the pro-
totype presented in [13], the reaction mass is made from
a low-density material (aluminum) so that its moment
of inertia can be increased without increasing its mass.
This means we can achieve the desired mechanical reso-
nant frequencies of the AMD assembly using less mass,
thereby limiting the thermal noise impact. Finally, the
reaction mass shape is intentionally not symmetric (see
Fig. 1), which breaks the degeneracy of principal res-
onances in orthogonal directions to widen the effective
bandwidth of a single AMD.
The size of the fused silica base is also chosen to min-
imize thermal noise. To do this it is important to mini-
mize the area of the bond to the test mass, so the base di-
ameter is just large enough for the PZT. The base height
of 4 mm is larger than it needs to be so that in the ther-
mal noise band, the AMD structure deforms mostly in
the low-loss base, rather than in the higher-loss PZT.
C. Modal damping efficiency
Efficient damping of the test mass acoustic modes re-
quires that the AMD principal resonances have good
overlap in frequency with these modes. The AMD de-
sign has five principal resonances: two bending or 'flag-
pole' resonances, two anti-flagpole resonances, and a sin-
gle torsional mode, as shown in Fig. 3. Each of these
modes involves large strain in the active direction of the
PZT element, and efficient conversion of mechanical en-
ergy to electrical energy. The compression mode is not
considered herein, as it has very little coupling to shear
in the PZT plates.
Finally, epoxies are used to bond the AMD elements
together and to bond the AMD to the test mass. Though
the volume and mass of the epoxies are much smaller
than that of the other elements, epoxies have relatively
high mechanical loss and they need to be chosen care-
fully. Several epoxies were evaluated in terms of their
minimum bond thickness, curing requirements, and me-
chanical loss. The loss factor of the chosen epoxy (see Ta-
ble I) displayed a significant dependence on bond thick-
ness [24], becoming larger for thicknesses less than a cou-
ple of microns. Thus the thermal noise impact of the
epoxy is not minimized by making the thinnest possible
bond; instead we found the optimal bond thickness to be
approximately 1 micron. The bonds to the PZT plate
require a conductive medium, and for these we mixed
graphite nano-powder with the epoxy. We confirmed that
the graphite-filled epoxy had the same loss factor as the
regular epoxy.
FIG. 3. Three different types of AMD principal resonances
which have non-zero strain in the active PZT direction
(shear). There are five principle resonances in total per AMD.
Due to the asymmetry of the reaction mass and the 45 degree
orientation of the PZT plate, the flagpole and anti-flagpole
modes appear in doublets. The torsion mode is also effective
for damping due to the anisotropy of the PZT material.
Models of a test mass with various numbers of
AMDs attached were analyzed via finite element analy-
sis (FEA) [25]. The test mass is a right circular cylinder
(34 cm φ×20 cm thick), with two flats polished on oppos-
ing sides (see Fig. 1). For ease of attachment, the AMDs
are mounted on these flats, within a specific area at the
top of the flat and adjacent to the test mass front face.
The test mass modes are first calculated with FEA in the
absence of AMDs. This model uses a bulk loss for the
fused silica of 10−7, and includes the much higher loss
((cid:39) 10−4), several-micron thick coating that creates the
mirror surface. The acoustic mode Q-factors from this
model (sans AMD) range from 10-40 million for modes
in the 15-80 kHz band.
Modeling the system with AMDs mounted on the flats,
we found that a set of at least four AMDs with evenly
spaced principal resonances is required to cover the entire
PI frequency band. The AMD resonances are spread out
by using different RM dimensions and masses for each
AMD, and different shunting resistors are used to spread
the peaks of ηr across the (15-80) kHz range. The prop-
erties of each AMD are given in Table I.
The quality factor Qm for a test mass mechanical mode
with AMDs attached is calculated with the following for-
mula:
(cid:80)
Qm(fm) =
Es(fm)
Ei(fm)ηi(fm)
,
(6)
i
where Es is the total modal strain energy of the test
mass+AMD, and Ei is the strain energy of the individual
component i with the loss factor ηi. The sum is over
all of the AMD elements listed in Table I, as well as
the test mass elements that are in the model (bulk and
coating). The strain energy values are obtained with the
FEA, and the loss values are taken from Table I and
Fig. 2 (for the ηr values). For the set of four AMDs, 98%
of the acoustic mode Qs are suppressed by a factor of
10 or more compared to their values without AMDs, and
if fm is very close to an AMD principal resonance, the
suppression factor can be 100 or more.
These Qm values from the FEA can be used to cal-
culate the parametric gain Rm using Eq. 1, but uncer-
tainties in several of the parameters prevent an accurate
calculation of the gain for a given mode.
Instead, we
use the Monte Carlo method described in [3] to deter-
mine the range of potential parametric gain values for
each acoustic mode. The key parameters for this simu-
lation are given in Table II. Each arm cavity comprises
a partially-transmissive 'input test mass', and a highly-
reflective 'end test mass', which differ only in their mir-
ror coatings and radii-of-curvature. The FEA parameters
(mode frequencies and Qs) for an end test mass are used
Input test mass RoC
End test mass RoC
Acoustic mode fm uncertainty
SRC Gouy phase
PRC Gouy phase
No. of mechanical modes
No. of iterations
(1936 - 1945) m
(2248 - 2254) m
± 2%
19 deg.
25 deg.
4,200
200,000
TABLE II. Monte Carlo parameters for computation of the
expected parametric gain, with the varied parameters listed in
the first 3 rows. One-way Gouy phases for the signal recycling
and power recycling cavities (SRC and PRC, respectively)
are held constant, whereas the radii-of-curvature (RoC) of
the test masses and the acoustic mode eigenfrequencies are
varied.
6
in this PI analysis. From the Monte Carlo results, we
identify the 95% bound on the parametric gain -- i.e., the
level that 95% of the values do not exceed -- and denote
this value as R95. The results for the target design power
in the arm cavities (750 kW) are given in Fig. 4, which
shows that all modes between (15-80) kHz should be sta-
ble when the test masses are outfitted with AMDs. For
the mode at 15.5 kHz, which is the strongest PI observed
in LIGO, R95 is reduced from 44 down to 0.7.
One mechanical mode at 10.4 kHz is still likely to pro-
duce an instability at full power, with an R95 of 3.4.
This is a drum head mode of vibration, where there are
no nodal diameters and the faces of the test mass vibrate
primarily along the cavity optic axis (similar to the fun-
damental mode of a circular membrane). Since this mode
shape is similar to the test mass deformation relevant for
thermal noise, the AMDs are designed to avoid coupling
to it to minimize their thermal noise impact. Further-
more, the mode has an extremely high Q-factor; the FEA
predicts an intrinsic Q of 62 million, which is damped
only to 30-40 million by the AMDs. This mechanical
mode couples mainly to a second order transverse optical
mode, the Laguerre-Gauss LG1,0 cavity mode. The in-
stability associated with this mode can still be controlled
via thermal tuning, and should not present a limitation.
FIG. 4. Comparison of the expected parametric gains at full
power (Parm = 750 kW) without AMDs (red circles) and with
AMDs (black circles), for a single test mass. Each data point
corresponds to the 95% bound on the gain, R95, as explained
in the text. With AMDs, all modes at and above 15 kHz
should become stable (R < 1). Each colored vertical bar
corresponds to a principal mode of that AMD, with the bar
width indicating the resonance 3 dB points. Four AMDs pro-
vide good overlap of AMD principal resonances with all po-
tentially unstable mechanical modes above 15 kHz.
102030405060708010-310-210-1100101102 7
Thermal noise at 100 Hz
√
[×10−22m/
Hz]
AMD1 AMD2 AMD3 AMD4
Base
RM
0.19
0.50
0.12
0.23
0.07
0.10
Epoxy between:
Test mass & Base
Base & PZT
PZT & RM
PZT (structural)
PZT (shunt)
Total AMD
6.52
4.16
2.49
4.48
0.031
9.30
4.19
2.24
1.23
2.31
0.009
5.43
3.00
1.21
0.54
1.16
0.011
3.48
Total noise for 1 test mass → 11.62
0.06
0.03
2.46
0.73
0.2
0.62
0.003
2.65
TABLE III. Thermal noise budget of the four AMDs at 100 Hz
for 293 K. The thermal noise level is strongly correlated with
the mass of the reaction mass. The largest thermal noise
contributors are the epoxy layers and the PZT material. The
very small contribution from the shunt is a result of orienting
the PZT polarization direction perpendicular to the cavity
optic axis.
D. Thermal noise estimation
The power spectral density St of thermal noise fluctua-
tions can be computed using the generalized fluctuation-
dissipation theorem [26]. We follow Levin's method [27]
and use FEA harmonic analysis to compute St:
(cid:88)
i
St(f ) =
4kBT
πf F 2
0
Ei(f )ηi(f ) ,
(7)
where kB is Boltzmann's constant and F0 is the ampli-
tude of an oscillating pressure field applied to the front
surface of the test mass model. The spatial profile of
the pressure field corresponds to the laser beam intensity
incident on the test mass -- a fundamental mode Gaus-
sian with a beam radius of either 6.2 cm (end test mass)
or 5.3 cm (input test mass). The pressure field creates
a deformation in each element of the model, and from
the FEA we can extract the strain energy Ei in each
element. The total thermal noise due to each AMD is
found by summing Eq. 7 over its elements, with loss fac-
tors coming from either Fig. 2 (for ηr(ω)) or Table I (all
other elements).
The FEA thermal noise results are shown in Table III.
√
For one test mass, the estimated thermal noise from four
AMDs is 1.16 × 10−21m/
Hz at 100 Hz. With all four
interferometer test masses (16 AMDs), this corresponds
to a total noise contribution of 2.32 × 10−21m/
Hz at
100 Hz. This is to be compared to the target design
sensitivity of Advanced LIGO [2] at 100 Hz, which, at
16.3× 10−21m/
Hz, is dominated by quantum noise and
thermal noise from the test mass mirror coatings.
√
√
The spectrum of displacement thermal noise due to the
AMDs is shown in Fig. 5, along with the Advanced LIGO
design spectrum and its noise contributors. The plot also
shows the degradation of the design spectrum due to the
AMDs, indicating a maximum noise penalty of 1.0% at
70 Hz.
III. EXPERIMENTAL RESULTS - PI
MITIGATION
For LIGO's O3 observing run, all test masses at both
observatories have been fitted with the set of four AMDs
described above. No parametric instabilities are observed
in the (15-80) kHz range, even without implementing any
thermal mode tuning or active damping. This is at an
arm power level of Parm = 230 kW, in contrast to the
situation without AMDs, when the first instability would
appear at 25 kW arm power.
To quantitatively assess the performance of the AMDs,
we made three types of measurements: Q-factor measure-
ments of test mass acoustic modes, with and without
AMDs; parametric gain of a specific mode versus ther-
mal cavity geometry tuning; and a noise measurement to
bound the thermal noise impact.
FIG. 5. Displacement noise amplitude spectra for AMD ther-
mal noise (red curve) and the major noise contributors to the
Advanced LIGO design at full power, Parm = 750 kW. Equiv-
alent detector strain noise is derived by dividing by 4000 m.
The AMD curve corresponds to 16 total AMDs (4 per test
mass). The blue dashed line shows the sensitivity degrada-
tion in percent as a result of adding the AMDs.
A. Test Mass Q-factors
Suspended adjacent to each test mass is a reaction
mass that includes a pattern of electrodes which can
be driven to apply electro-static forces to the test mass.
These actuators are used to excite the test mass acoustic
modes and measure their Q-factors from the ring-downs
recorded in the main gravitational-wave channel. Test
mass modes were excited while the interferometer was
operating at low laser power, in order to avoid paramet-
10110210310-2110-2010-1910-1800.20.40.60.811.2 ric gain significantly altering the ring-down times.
We were able to measure Q-factors for thirteen modes,
usually on multiple test masses, in the band (10−50) kHz.
For the ten lowest frequency modes, we could identify
their particular mode shapes and so can compare the
measurements to the finite element model predictions
(above 30 kHz the mode density is so high that it is not
possible to uniquely identify the modes). The Q-factor
measurements from the LIGO Livingston interferometer
are shown in Fig. 6; the results from the Hanford inter-
ferometer are similar. The plot also includes eleven Q-
factors from one of the Livingston test masses measured
before the AMDs were installed. As expected, the Q-
factors for all but one of the modes at 15 kHz and above
are reduced by nearly an order of magnitude or more.
The variations in Q from test mass to test mass and
from the modelled values are not too surprising given re-
alistic deviations in AMD and test mass parameters; for
example, any frequency mismatch between the AMD res-
onances and the test mass modes will reduce the damp-
ing. The FEA of the test mass predicts acoustic mode
frequencies with a typical error of 0.5%, or up to a few
hundred Hz. In addition, some AMD parameters are dif-
ficult to control during assembly and installation. We
estimate that the epoxy bond thickness could vary by up
to -50% or +20% from the 1 µm nominal thickness, which
would limit the accuracy of the AMD principal resonance
to about 5 kHz. Also, the installed locations of the AMDs
on the test masses could differ from the model by several
mm, due to varying mounting constraints from test mass
to test mass.
B. Optical mode transient test
According to Eqn. 1, parametric gain scales linearly
with the gain of the higher-order optical mode Gn, as-
suming one relevant optical mode. Gn in turn depends
on how close the acoustic mode frequency is to the op-
tical mode frequency [4]: Gn ∝ (∆f 2
n + 4∆f 2)−1, where
∆fn is the linewidth of the higher-order mode n, and
∆f = fm − fn, where fn is the frequency of the higher-
order mode relative to the frequency of the arm cavity
TEM00 mode. Thermal tuning of a test mass' curva-
ture will shift fn, and thereby change ∆f and the optical
gain. By tuning an optical mode to be very close to its
acoustic mode PI-partner, fn ≈ fm, we can determine
the maximum possible parametric gain for that acoustic
mode.
We performed such a measurement when AMDs were
installed on a single end test mass in one arm cavity
(the X-arm) at the LIGO Livingston Observatory. We
locked the interferometer with 100 kW of power in the
arm cavities, and took advantage of the small absorp-
tion in the mirror coatings (sub-ppm) which creates a
thermal tuning transient with a time constant of ap-
proximately 1 hour. We monitored the amplitude of the
15.5 kHz acoustic mode of both X-arm test masses, the
8
FIG. 6. Measured Q-factors of test mass acoustic modes. The
green crosses correspond to pre-AMD measurements of one
of the Livingston Observatory test masses. The post-AMD
Q-factors are shown as black dots. The blue bars indicate
the spread of Qs measured across several test masses (with
AMDs), and the purple triangles represent the model predic-
tion of Qs with AMDs.
FIG. 7. Thermal transient of the 15.5kHz modes on input
(ITMX) and end (ETMX) test masses, respectively. As ex-
pected, the ITMX without AMDs became unstable during
thermal transient, with rapidly rising amplitude. Contrary,
ETMX which has attached AMDs remains stable with para-
metric gain below unity. The rising envelope of the ETMX
signal is a result of imperfect filtering out of the ITMX signal.
mode most prone to instability through interaction with
a third-order transverse optical mode; details of these
10.210.415.015.115.515.623.023.0523.0627.046.547.447.510-210-11001011021.01.52.02.53.002004006008001000120014000.170RITMX~ 1.2RETMX = 0.0650.1310.1180.176ESD excitations mechanical and optical modes can be found in [10]. The
transient thermal tuning shifts the third-order optical
mode higher in frequency, towards 15.5 kHz. The acous-
tic mode is separated by about 4 Hz between the two test
masses (one with AMDs and one without), so the light
scattered from each experiences nearly the same optical
gain as ∆f changes. We periodically excited the 15.5 kHz
mode of the end test mass with its electro-static actua-
tor and measured the ring-down time, from which the
parametric gain was extracted using Eq. 2.
The evolution of the 15.5 kHz mode amplitude in both
test masses is shown in Fig. 7. The input test mass, which
did not have AMDs, becomes unstable with a measured
parametric gain of R = 1.2 before it drives the inter-
ferometer out of lock. On the other hand, the end test
mass, with AMDs, remained stable with a highest mea-
sured gain of R = 0.176. While we cannot be certain
that this corresponds to the highest possible optical gain,
Fig. 7 shows that R ≤ 0.176 for a range of thermal tun-
ings. Since the 15.5 kHz mode is the strongest in terms of
parametric instabilities, this end test mass R value can
be used to estimate the maximum arm power at which
the interferometers should be stable under most thermal
tuning conditions: Pmax = 100 kW/0.176 = 570 kW.
Furthermore, any instabilities that occur when the full
design power of 750 kW is reached should be avoidable
with thermal cavity tuning.
C. Thermal noise impact
The additional thermal noise introduced by the AMDs
is expected to be small, increasing the detector's design
strain noise by at most 1.0% at 70 Hz.
It is not pos-
sible to verify the thermal noise impact at that level,
but we can set an upper limit by comparing the mea-
sured interferometer noise to noise model expectations,
and to measured noise before AMDs were installed. An
increase in thermal noise would first be evident in the
band (40-200) Hz (see Fig. 5), but the detector's noise
spectrum is limited by quantum shot noise at frequen-
cies above 50 Hz range, masking thermal and other clas-
sical noises. The classical noise spectrum underneath the
quantum noise can, however, be revealed using the cross-
correlation technique described in [28]. This technique
takes advantage of the fact that the light at the output
port is split into two equal intensity beams, and homo-
dyne detection is performed on each beam. Quantum
shot noise and photodetector dark noise are uncorrelated
in these two detection channels, and therefore their con-
tribution to the cross-spectrum of the two channels di-
minishes with more averages, leaving the coherent, clas-
sical noise.
Data was analyzed for the Livingston detector dur-
ing low-noise operating states both before and after all
AMDs were installed. Between O2 and O3 several de-
tector improvements and changes were made in addition
to the AMDs, so the before/after comparison of classical
9
FIG. 8. Noise spectra of the Livingston interferometer before
and after installation of all AMD. The solid lines show the
total noise level measured (classical + quantum noise). The
dotted show the level of classical noise only, after the quan-
tum has been subtracted via a cross-correlation technique.
Coating thermal noise and residual gas noise - the dominant
classical noise contributions in this region - are also shown.
noise does not test only the effect of the AMDs. However,
it can be used to verify that the classical noise did not
increase with the presence of AMDs. In addition, we can
compare the measured cross-spectrum with the modeled
classical noises, which are well-known in the frequency
band of interest.
Fig. 8 shows spectra of the total interferometer noise
and the classical noise measured with the cross-spectrum,
both with and without AMDs on the test masses. The
total noise in the case with AMDs is lower than the ear-
lier, sans AMD data due to higher circulating arm power
(225 kW vs. 100 kW), which reduces the quantum shot
noise contribution. The small decrease in classical noise
after AMD installation is likely due to an unrelated re-
duction in a different classical noise, such as scattered
light. We see that the measured classical noise with
AMDs (dashed red curve) matches the noise model es-
timate for the dominant classical noises well in most of
this frequency band. The discrepancy between the AMD
measurement 100-150 Hz and the model is within the
∼ 2% detector calibration uncertainty [29] and model un-
certainties which are larger than calibration uncertainty.
These model contributions are coating thermal noise and
phase noise due to residual gas in the beam tubes. There
is no evidence that the AMDs are introducing significant
additional thermal noise.
1001502002500.511.522.533.5410-20225kW arm power100kW arm power D. Effect of beam decentering
The PI simulations that produced the data in Fig. 4
assumed the cavity beams are centered on the test mass
faces. In practice, during the O3 observing run the cav-
ity beams are intentionally decentered on several of the
test masses in order to avoid small defects in their mir-
ror coatings. The typical beam decentering of 20 mm
can significantly increase the geometrical overlap Bm,n
between some mechanical and optical modes, thereby in-
creasing their PI probability. This is particularly the
case for a pair of acoustic modes at 10.2 and 10.4 kHz,
which have a displacement pattern on the test mass face
similar to the Zernike trefoil polynomial. These modes
overlap only weakly with the Hermite-Gaussian second
order modes (HG0,2, HG2,0 and HG1,1) when the cavity
beam is centered, but the overlap factor can increase by
several orders of magnitude when the beam is off-center.
For example, B2
m,n between the HG1,1 mode and the
10.4 kHz mode increases from 2 · 10−8 to 6 · 10−3 for a
decentering of 18 mm.
Indeed, instabilities have been observed at both 10.2
and 10.4 kHz in one arm of the LIGO Hanford interfer-
ometer, at a power level of Parm = 230 kW. The 10.4 kHz
mode could be either the trefoil mode just mentioned, or
the drumhead mode mentioned in Sec. II C; it is difficult
to distinguish between the two as their eigenfrequencies
differ by only ∼ 10 Hz. Both instabilities are stabilized
by shifting the second-order optical modes by ∼ 100 Hz
using the ring heater on the end test mass (i.e., thermal
cavity geometry tuning).
10
of the LIGO test masses have been installed on all four
test masses in both LIGO interferometers. With these
dampers in place, no instabilities have been observed
in the (15-80) kHz range at arm circulating powers as
high as 240 kW. Two instabilities have been observed in
one interferometer near 10 kHz, and these have been con-
trolled with a small amount of thermal tuning. Impor-
tantly, no active damping has been required on either
interferometer to achieve long-term stability.
At the full design power of Parm = 750 kW, assuming
the cavity beams are then centered on the test masses,
the AMDs should stabilize all acoustic modes except for
the 10.4 kHz drumhead mode, and possibly the 15.5 kHz
modes. The drumhead mode will need to be stabilized,
most likely with thermal tuning (active damping may
be difficult as the electro-static actuators do not couple
strongly to this mode). If we can improve the accuracy
with which the AMD principal resonances can be made
to match their design values, we can better target the
15.5 kHz modes to decrease their probability of being un-
stable.
Attaching any components to the test masses must
be done carefully in order to avoid increasing the ther-
mal noise in the gravitational-wave detection band. Our
model predicts that the detector's equivalent strain noise
will be degraded by at most 1.0% around 70 Hz by the
addition of the AMDs. Our measurement of the classical
noise present in the interferometer is not accurate enough
to verify such a small impact, but it does show that there
is no significant increase in thermal noise.
IV. CONCLUSION
ACKNOWLEDGMENTS
We have presented a simple yet effective passive de-
vice to mitigate parametric instabilities in interferometric
gravitational-wave detectors. The significant advantage
of these acoustic mode dampers compared to previous
mitigation techniques [11, 12] is that they act on all in-
stabilities simultaneously without requiring further tun-
ing or intervention. Acoustic mode dampers designed to
provide tuned damping of the (15-80) kHz internal modes
The authors acknowledge the entire LIGO Scientific
Collaboration for their wide ranging expertise and con-
tributions. LIGO was constructed by the California Insti-
tute of Technology and Massachusetts Institute of Tech-
nology with funding from the National Science Founda-
tion, and it operates under Cooperative Agreement No.
PHY-1764464. Advanced LIGO was built under Grant
No. PHY-0823459. This paper carries LIGO Document
Number ligo-p1900243.
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|
1910.00097 | 1 | 1910 | 2019-09-03T07:57:40 | Photoacoustic Imaging of Lithium Metal Batteries | [
"physics.app-ph",
"physics.chem-ph"
] | We demonstrate that photoacoustic microscopy (PAM) can be a potential novel imaging tool to investigate the Li metal dendrite growth, a critical issue leading to short circuit and even explosion of Li metal batteries. Our results suggest several advantages of PAM imaging of Li metal batteries: high resolution (micrometers), 3D imaging capability, deep penetration in a separator, and high contrast from bulk Li metal. Further, PAM has potential for in situ real-time imaging of Li metal batteries. | physics.app-ph | physics | Photoacoustic Imaging of Lithium Metal Batteries
Huihui Liu,1,+ Yibo Zhao,1,+ Jiasheng Zhou,1 Ping Li,1 Shou-Hang Bo,1,3 and Sung-Liang Chen,1,2,4 ∗
1University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
2State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Jiao Tong University, Shanghai 200240, China
3e-mail: [email protected]
4e-mail: [email protected]
(Dated: September 3, 2019)
Abstract
Increasing demand for high-energy batteries necessitates a revisit of the most energy-dense negative electrode, lithium (Li)
metal, which was once abandoned in the 1990s because of safety risks associated with inhomogeneous deposition and stripping
(i.e., dendrite growth) during battery cycling. In recent years, to better understand and overcome the Li metal dendrite problem,
great efforts have been made to reveal dendrite growth processes using various imaging modalities. However, because of being
almost invisible to electrons and X-rays, directly imaging Li metal with the required contrast, spatial and temporal resolutions
have always been the challenge. Here, we show that by exploiting photoacoustic effect, microscale-resolution three-
dimensional structure of Li protrusions can be clearly visualized within minutes by photoacoustic microscopy (PAM). PAM
enables high contrast as well as depth information of Li metal inside the glass fiber separator of a Li/Li liquid electrolyte
symmetric cell. Our proof-of-principle experiment introduces a new imaging tool to the Li metal battery community, which
could greatly benefit the study of fundamental mechanisms of not only the Li metal dendrite growth in conventional and solid-
state batteries, but also sodium and magnesium metals. We believe PAM is a promising in-operando tool for battery diagnostic
and prognostic.
I. INTRODUCTION
Lithium (Li)-ion batteries are ubiquitous in present-day technological applications, ranging from portable devices, electric
vehicles to grid-scale stationary energy storage. Li-ion batteries are composed of positive and negative electrodes (two Li
reservoirs with different concentrations) which are separated by a polymeric membrane, i.e., a separator. The separator is
immersed in Li-ion conducting liquid electrolyte which permits only Li-ion shuffling between the positive and negative
electrodes during battery cycling. Simultaneously, electrons flow through the external circuit powering electronic devices.
With increasing demand for higher-energy batteries, it is now a common consensus that graphite anode in Li-ion batteries
must be replaced with the most energy-dense Li metal in the next-generation Li metal batteries [1]. Ironically, Li metal anode
was the choice when the first rechargeable Li battery was invented in the 1970th [2]. Soon afterwards, however, safety hazards
associated with Li metal anode were identified, which halted the development of Li metal batteries. The problem is
1
inhomogeneous deposition (during charge) and stripping (during discharge) of Li metal, which forms protrusions into the
separator (commonly referred to as dendrites in literature) instead of smooth deposits, leading to short circuit and even
explosion of Li metal batteries [3]. The microstructure of such Li metal protrusions can be mossy, whisker-like or dendritic,
and is a complex function of cycling duration, rate, temperature, and electrolyte concentration, to name a few. Solid-state
batteries utilizing a mechanically strong and non-flammable solid-state electrolyte have been proposed as a promising solution
to suppress dendrite growth of Li metal. However, recent studies have shown that metal dendrites can still grow through the
grain boundaries of a solid electrolyte and eventually lead to electrolyte crack and short circuit of the battery [4]. It is therefore
of uttermost importance to develop a quantitative understanding of Li metal dendrite growth in conventional liquid electrolyte
and current solid-state electrolyte settings, and to identify conditions under which smooth Li deposition of tens of micrometers
in thickness can be achieved.
Imaging technologies have been demonstrated as a powerful tool to study dendrite growth [4-15]. For example, scanning
and transmission electron microscopy has been widely used to acquire images of Li dendrites with high resolution and high
quality [4,9,11-14]. While electron microscopy shows the potential to provide the insight into the formation of dendrites,
demanding sample preparation is required. Therefore, it is highly challenging for observation in situ, which is essential to track
the dynamic evolution of Li metal dendrites during the charge and discharge cycles. Three-dimensional (3D) images of
subsurface structures underneath Li metal dendrites were observed with X-ray tomography with resolution on the order of a
micrometer [6]. However, more than a thousand images were collected with a series of data processing steps required, which
restricts the temporal resolution of this technique, limiting its use to ex situ observations only. We further note that Li metal is
neither visible to electrons nor to X-rays because Li possesses the third lowest electron density of all chemical elements (just
above hydrogen and helium), making the observation of bulk Li metal through electron and X-ray microscopy impossible.
Only the surfaces of Li metal which are composed of decomposition products resulting from the side reaction between Li
metal and the electrolyte (e.g., LiF and Li2CO3) can be visualized. Magnetic resonance imaging (MRI) was utilized to non-
invasively observe and quantify Li metal microstructures [5,8,10,15]. However, Li is inherently insensitive to MRI (e.g., much
less than that of proton [10]), limiting both the spatial and temporal resolution of 6Li and 7Li MRI [5]. Optical microscopy
(OM) offers one possible route to in situ imaging of dendrites with high temporal resolutions, yet only two-dimensional (2D)
images can be obtained [9]. Finally, because of limited penetration depth, none of these techniques discussed above can directly
visualize Li dendrite growth within the separator or solid-state electrolyte membrane, an important area to precisely locate the
positions and patterns of short circuits caused by metal protrusions.
Photoacoustic imaging is based on the photoacoustic effect that light absorbed by a material can be converted into heat and
the subsequent thermoelastic expansion to generate an acoustic wave. In the past 20 years, it has been extensively explored in
the biomedical imaging field to reveal a wide variety of endogenous or exogenous absorbers [16-26]. Since light is highly
absorbed by most metals, we anticipate that Li metal can be visualized and quantified by photoacoustic imaging. In this paper,
for the first time, we demonstrate that photoacoustic imaging can be exploited to map Li protrusions in Li metal batteries in
2
3D. A home-built photoacoustic microscopy (PAM) system is used to successfully observe the microstructure of Li protrusions
inside the separator of a Li/Li liquid electrolyte symmetric cell, and the imaging depth is expected to be more than ~160 µm.
Although we image Li metal ex situ to demonstrate the utility of photoacoustic imaging, the obtained results suggest that
photoacoustic imaging can potentially be a new tool to realize in situ, real-time imaging of Li as well as other metals, such as
sodium and magnesium [20,23]. We believe that PAM can also be extended to image Li metal dendrite growth in solid-state
batteries. The imaging technique is also cost-effective and easy to operate.
II. METHODS
In this study, a Li/Li liquid electrolyte symmetric cell, consisting of two Li metal electrodes and a liquid electrolyte layer
(Fig. 1(a)), was used to showcase PAM imaging of Li protrusions. The liquid electrolyte layer was fabricated using a glass
fiber separator (GFS) (GF/D, Whatman) soaked in 1 M LiPF6 electrolyte solution with 1:1:1 (volumetric ratio) ethylene
carbonate (EC): diethyl carbonate (DEC): dimethyl carbonate (DMC) as a solvent. The thickness of the Li electrode was ~240
µm, and that of the GFS was ~2 mm before soaked and <2 mm after soaked. The diameter of the two Li electrodes was ~1.3
cm, and that of the GFS was ~1.5 cm. To facilitate PAM imaging, a flat cross-sectional sidewall surface was prepared by
cutting the Li/Li cell through its sandwich stack, as shown in Fig. 1(b). Note that the imaged Li electrode thickness varied
from <50 µm to up to ~300 µm (results described later), which was different from the original thickness of the Li electrode
(~240 µm, before cutting the Li/Li cell sample (Fig. 1(a))). This is most likely a result of mechanical damage to Li metal
during cutting the Li/Li cell sample (Fig. 1(b)). One corner of the Li electrode was further removed to mark the location for
imaging after cycling. For the electrochemistry test, the Li/Li cell was first sealed in a stainless steel coin cell case (CR2016,
Shenzhen Teensky Technology, Shenzhen, China), as shown in Fig. 1(c), before the galvanostatic (i.e., constant current)
charging process of the Li/Li cell. After charging, the Li/Li cell was removed from the stainless steel coin cell. Figure 1(d)
illustrates the Li/Li cell before and after charging. The direction of the current determines which of the electrodes that Li is
stripped from or is plated onto, as shown in Fig. 1(d). In general, more protrusions will be formed for charging at high areal
capacity. In this study, several Li/Li cells were charged at different current densities of 0.1, 0.2, 0.3, 0.5, and 1 mA/cm2,
respectively, because current density was considered as a major factor affecting the morphology of deposited Li. For each
charging current density, the charging time was fixed at 15 hours, and thus, higher current density resulted in larger amount
of Li metal deposition (or stripping), which was also confirmed by PAM imaging (results described later). Figure 1(e) shows
Li/Li cell voltages as a function of elapsed time at five different charging current densities. For each charging current density,
a representative voltage curve from one Li/Li cell sample was plotted. Before PAM imaging, the Li/Li cell, either with or
without the charging process, was sealed in a plastic bag filled with liquid (EC:DMC or silicon oil), which was used to facilitate
ultrasound coupling without chemically reacting with or physically dissolving any component of the Li/Li cell.
3
Fig. 1. (a) Schematic of a Li/Li liquid electrolyte symmetric cell. (b) Schematic of the flat cross-sectional sidewall surface of
the Li/Li cell with one corner of the Li metal removed as a marker. (c) Schematic of the Li/Li cell sealed in a stainless steel
coin cell case. (d) Illustration of the Li/Li cell before and after charging. Current is along the -Y (upward) direction for charging.
More protrusions will be formed for charging at high areal capacity. (e) Cell voltages as a function of elapsed time at different
charging current densities.
The schematic of the PAM system is shown in Fig. 2(a). A 532 nm pulsed laser (FDSS532-Q4, CryLaS, Germany) was used
for photoacoustic imaging. The laser pulse duration was <2 ns, and the repetition rate was 1 kHz. The laser emitted from the
laser head was split into two beams by using a beamsplitter (BS025, Thorlabs). The 10% reflected power was detected by a
photodiode (DET10A2, Thorlabs) and was used as trigger signals. The 90% transmitted power was attenuated, spatially filtered,
and focused by an objective lens (AC254-030, Thorlabs), which was used to excite photoacoustic signals. To facilitate PAM
imaging of the cross-sectional sidewall surface of the Li/Li cell, a sample holder was custom made, as shown in Fig. 2(b). By
using the sample holder, the Li/Li cell can be stably fixed with its sidewall surface facing upward. A water tank was also
custom made, and it was used to facilitate ultrasound coupling. Both the sample holder and the water tank were mounted on a
3D linear motorized stage (M-404, Physik Instrumente [PI], Karlsruhe, Germany), as shown in Fig. 2(a), for scanning during
image acquisition. As for detection of photoacoustic waves, a custom-made needle hydrophone (central frequency: 35 MHz)
was employed and placed obliquely to the optical axis. Then, the photoacoustic signals were amplified by a preamplifier (ZFL-
500LN-BNC+, Mini-Circuits, New York) and sampled by a digitizer (CSE1422, GaGe, Illinois) with sampling rate of 200
4
MS/s and 14-bit resolution. The data recorded by the digitizer were transferred to a computer for post signal processing and
image formation. For post signal processing, a matched filter of 20-60 MHz was adopted to enhance signal-to-noise ratios
(SNRs). Note that in this work, the laser energy used was ~86 nJ (per pulse) and no signal averaging was applied unless
otherwise specified. The laser energy of ~86 nJ was chosen because it was below the damage threshold of the Li/Li cell used
in this work based on our calibration results (see Fig. A1 in Appendix A).
Fig. 2. (a) Schematic of the PAM system. (b) Custom-made sample holder. (c) Calibration of lateral resolution. (d)
Measurement of axial resolution. NDF1, neutral density filter 1; NDF2, neutral density filter 2; L1, lens 1; L2, lens 2; OL,
objective lens; WT, water tank; PSF, point spread function.
The sharp edge of a razor blade was imaged to calibrate lateral resolution of our PAM system. Figure 2(c) shows the lateral
profile of photoacoustic signals with scanning step size of 0.5 µm. The profile was fitted by an edge spread function (ESF)
[25]. Then, we took the first derivative of the ESF to obtain a linear spread function and extracted its full width at half maximum
(FWHM) as lateral resolution, which was 3.3 µm. Note that higher lateral resolution of PAM can be enabled by using a lens
with a higher NA for light focusing. As for measuring axial resolution, a 6-µm-diameter carbon fiber was imaged. Figure 2(d)
shows the photoacoustic A-line signal from the carbon fiber and its Hilbert transform (envelope detection). The axial resolution
was determined to be 26 µm from the FWHM of the envelope.
III. RESULTS
To measure the penetration depth of PAM for imaging Li inside the GFS of a Li/Li cell, we devised a sample consisting of
three 51-µm-diameter tungsten wires (TWs). Note that the TW (instead of Li) was imaged because of the difficulty in preparing
a sample with Li continuously distributed along the depth direction inside the GFS, and because of the similarity in the
5
photoacoustic signal amplitudes from the TW and Li (see Fig. A2 in Appendix B). Sample preparation for the calibration of
penetration depth is detailed in Appendix C. The schematic of the sample is shown in Fig. 3(a). The first TW (TW1) was
obliquely inserted into the GFS for measurement of penetration depth of PAM. The second TW (TW2) was placed right above
the surface of the GFS, which can be used as a reference of the surface of the GFS. The third TW (TW3) was placed above a
PET film with thickness of ~150 µm, which was used as a marker for estimation of penetration depth of OM. The PET film
was used to ensure the flatness of the top surface of the GFS. The laser energy of ~86 nJ was used and signal averaging of 16
measurements was applied. Figures 3(b) and 3(c) show the PAM maximum amplitude projection (MAP) images of the sample
in the XZ and XY planes, respectively. We also checked the depth positions of maximum photoacoustic A-line signal
amplitudes along the X direction, as shown in Fig. 3(d). From Figs. 3(b) and 3(d), the penetration depth inside the GFS by
PAM was measured to be ~160 µm. Penetration depth can be further enhanced by boosting SNRs, such as using an acoustic
detector with higher sensitivity and/or applying more signal averaging. We also measured the penetration depth by using
higher laser energy (see Fig. A3 in Appendix D) although it is above the damage threshold mentioned previously. On the other
hand, Figs. 3(e) and 3(f) show the OM images of the sample at the foci of TW3 and TW1, respectively. As mentioned above,
TW3 was used as a marker. Specifically, we took the OM image of TW3 first, and then took that of TW1 by adjusting the
focus of the objective while the lateral position of the sample was kept the same. In this way, we were able to infer the position
of TW3 in Fig. 3(f) because Figs. 3(e) and 3(f) are considered to be co-registered in the lateral direction. In Fig. 3(f), the
intersection of TW1 and TW3 is denoted as O, and the position where TW1 becomes invisible is denoted as P. Then, the
distance OP of ~428 µm can be obtained. Next, by comparing Fig. 3(f) with 3(c), the corresponding positions O and P in Fig.
3(c) can be determined. Further, by comparing Fig. 3(c) with Figs. 3(b) and 3(d), the corresponding position P in Figs. 3(b)
and 3(d) can also be labeled, and the depth of TW1 at P can be obtained. Finally, the penetration depth inside the GFS by OM
was determined to be ~50 µm, which was much shallower than PAM. The results suggest that PAM allows much deeper
penetration with high contrast inside the GFS compared with OM, and thus holds promise for 3D visualization of Li inside the
GFS.
6
Fig. 3. Calibration of penetration depth. (a) Schematic of the sample consisting of three TWs in side view (upper) and top view
(lower). For better illustration, TW1 is plotted in blue, TW2 in green, and TW3 in red. (b,c) PAM MAP images of the sample
in the XZ (b) and XY (c) planes. (b) and (c) share the same scale bar in (b). (d) Depth positions of maximum photoacoustic
A-line signal amplitudes along the X direction. (e,f) OM images of the sample at the foci of TW3 (e) and TW1 (f). Red lines
indicate the positions of TW3 and expected TW3. (e) and (f) share the same scale bar in (e).
Besides, co-registered PAM and OM imaging of the Li-deposited electrode, the side with Li deposition after charging the
Li/Li cell, was conducted for further comparison of the two imaging modalities. The Li/Li cell sample was prepared, which
was charged under current density of 0.5 mA/cm2 for 15 hours. To facilitate image co-registration of PAM and OM, some
makers were made on the top surface of the sample holder (Fig. 4(a)) by using an ink pen. Li was deposited along the +Y
direction upon electrochemical charging. Figure 4 shows PAM MAP (XY) and OM images of the Li/Li cell sample. The
markers can be clearly seen in Figs. 4(b) and 4(c). Note that Figs 4(c) and 4(e) were taken by 5´ and 20´ objectives,
respectively. As can be seen, by comparing co-registered PAM and OM images in Figs 4(b) and 4(c), PAM enables much
higher contrast. Besides, by comparing co-registered PAM and OM images in Figs. 4(d) and 4(e), PAM provides larger depth
of focus (DOF). Further, Fig. 4(f) shows the 3D rendering image of Fig. 4(d), demonstrating the 3D imaging capability of
PAM. By contrast, OM suffers from low contrast, limited DOF, and no depth information.
Fig. 4. Comparison of PAM and OM for imaging Li of the Li/Li cell. (a) Schematic of the Li/Li cell sample and markers. (b)
PAM MAP (XY) image of the Li/Li cell sample. (c) OM image of the Li/Li cell sample taken by using a 5´ objective. (d)
Zoom image of the dashed box in (b). (e) OM image of the Li/Li cell sample taken by using a 20´ objective, corresponding to
the dashed box region in (c). (b) and (c) are co-registered PAM and OM images, and so do (d) and (e). (b) and (c) share the
same scale bar in (c), and (d) and (e) share the same scale bar in (e). (f) 3D rendering image of (d). The XYZ orientation is the
same as Figs. 1 and 2.
7
To demonstrate the imaging capability of PAM in visualization of Li protrusions from the Li-deposited electrode towards
the GFS of the Li/Li cell, the cross-sectional sidewall surface of one Li/Li cell sample before and after charging at current
density of 1 mA/cm2 for 15 hours was imaged. The details of the Li/Li cell sample fabrication, packaging, and charging were
mentioned previously. Figure 5 shows the PAM MAP (XY) images at two representative regions around the Li-deposited
electrode of the Li/Li cell sample. As can be seen, before charging, a thin layer of the Li metal electrode with relatively uniform
thickness was observed. By contrast, after charging, protrusions of Li metal from the Li-deposited electrode towards the GFS
can be clearly identified. The fusion image shows the PAM image after charging overlaid with that before charging, providing
a better comparison. The results suggest that Li protrusions after charging can be revealed by PAM. As can be observed in
Fig. 5, the thickness of the thin layer of the Li electrode before and after charging kept almost the same, which is considered
to be plausible. Besides, Li protrusions were concentrated in certain areas of the Li-deposited electrode, demonstrating the
inhomogeneous nature of Li deposition. The above-mentioned characteristics were observed in both of the two representative
regions in Fig. 5.
Fig. 5. PAM MAP (XY) images at two representative regions around the Li metal electrode of the Li/Li cell sample before
and after charging at current density of 1 mA/cm2 for 15 hours. All images share the same scale bar. The XYZ orientation is
the same as Figs. 1 and 2.
Furthermore, because PAM is able to image Li protrusions, as demonstrated above, it is interesting to utilize PAM to study
quantitative changes of Li protrusions of the Li/Li cells under different charging current densities. Six Li/Li cell samples were
8
prepared as follows: before charging and after charging under current densities of 0.1, 0.2, 0.3, 0.5, and 1 mA/cm2, respectively,
for 15 hours. Figure 6 shows the PAM MAP (XY) images of the six Li/Li cell samples. As can be seen, Li protrusions grew
more and more as the charging current density increases. The Li thickness increased from ~0.11 mm for the case of before
charging to ~0.54 mm for that of after charging at current density of 1 mA/cm2. Figure 6(b) shows a representative 3D
rendering image corresponding to the region labeled by the dashed box in the image of 1 mA/cm2 in Fig. 6(a), demonstrating
PAM's ability of 3D examination of Li protrusions inside the GFS. To quantify the Li protrusions under different current
densities, the Li ratio, defined as the proportion of the area with Li over the observed area in 2D MAP images, was calculated.
As shown in Fig. 6(c), Li ratio increases gradually as increased charging current densities and reaches saturation at current
density of 0.5 mA/cm2. For charging current densities <0.5 mA/cm2, the trend agrees with increasing amount of Li deposition
as current density (or areal capacity) increases. Above 0.5 mA/cm2, however, no substantial increase of the Li ratio was
observed as the current density doubled (i.e., from 0.5 mA/cm2 to 1 mA/cm2), which can be explained as follows. First, local
current density over the XZ plane (also see Fig. 1(b)) varies substantially, in particular at high current density, which leads to
inhomogeneous deposition of Li (over the XZ plane). Second, instead of the whole XZ plane, only a thin layer (i.e., small
thickness along the Z direction) of Li deposition was considered in the calculation of the Li ratio in Fig. 6(c). The above two
factors result in the Li ratio not fully aligned with the "average" current density. The results also suggest that PAM has potential
for deducing the local current density over the XZ plane from the amount of Li deposition (over the XZ plane) quantified by
PAM.
9
Fig. 6. (a) PAM MAP (XY) images at regions around the Li metal electrode of the six Li/Li cell sample before and after
charging at current densities of 0.1, 0.2, 0.3, 0.5, and 1 mA/cm2, respectively, for 15 hours. All images share the same scale
bar. (b) 3D rendering image corresponding to the region labeled by the dashed box in the image of 1 mA/cm2 in (a). (c)
Quantitative changes of Li ratio. The XYZ orientation is the same as Figs. 1 and 2.
IV. DISCUSSION AND CONCLUSIONS
Currently, using our PAM system, the image acquisition time for an image consisting of 256 ´ 256 pixels was ~5 mins. As
the aim of this study was to demonstrate the feasibility of this novel PAM approach for imaging Li metal batteries, the imaging
speed was not optimized. According to recent studies [20,23], high-speed and even real-time imaging can be realized by using
a laser with a high pulse repetition rate and using either a MEMS-mirror scanner or a hexagon-mirror scanner in PAM. Besides,
PAM imaging of batteries composed of other metal electrodes such as sodium, magnesium, and zinc would be technically
possible and can be explored in future. Development of PAM imaging of Li metal batteries in situ would be of great interest
for future work.
In summary, PAM was exploited to image Li metal batteries to show potential of PAM as a novel tool to study mechanisms
of Li metal dendrite growth. A PAM system with high spatial resolutions was used. Compared with OM, PAM was able to
10
penetrate deeper down to ~160 µm inside the GFS. Further, PAM provided high contrast, large DOF, and depth information
for imaging of Li in the Li/Li cell. The 3D rendering image of the Li/Li cell sample acquired by PAM was also demonstrated.
Imaging result of one Li/Li cell sample before and after charging demonstrated the PAM ability in observation of Li protrusions.
Another imaging result of several Li/Li cells after different charging current densities manifested the potential of PAM in
quantitative analysis of Li protrusions. This proof-of-concept study shows that PAM offers a solution to the challenges suffered
by existing technologies, such as the prohibitively high cost and demanding sample preparation in electron microscopy. As
such, PAM could pave the way to realizing in situ observation to facilitate tracking Li metal dendrites during the charge and
discharge cycles. There are several advantages and potentials of PAM for imaging Li metal batteries: high resolution (in
micrometers), 3D imaging capability, deep penetration into the separator, high contrast from bulk Li metal, and potentials for
in situ real-time imaging.
Funding
National Science Foundation of China (NSFC) (61775134); Shanghai Sailing Program (18YF1411100).
Appendix A: Calibration of the damage threshold of the Li/Li cell used in this work
To calibrate the damage threshold of the Li metal of the Li/Li cell under the illumination of 532 nm pulsed laser, several Li
foil pieces were imaged by PAM under different laser energy. Since both EC:DMC and silicon oil were used as acoustic
coupling media in this work, both liquids were used in this calibration. Four Li metal foil samples sealed in plastic bags were
prepared inside an Argon-filled glove box. EC:DMC was used as acoustic coupling media for two samples, and silicon oil for
the other two samples. The former two were to be illuminated under laser energy of ~86 nJ and ~185 nJ (per pulse), respectively,
and so do the latter two. We first took OM images of the corner of the four Li metal foil samples (the first column in Fig. A1).
Then, a small region around the corner of the four samples was imaged by PAM (the dashed boxes in the third column in Fig.
A1). After PAM acquisition, OM images of the same corner of the four samples were taken (the second column in Fig. A1).
As can be seen in Fig. A1(b) and A1(e) under laser energy of ~86 nJ, OM images after PAM acquisition do not exhibit obvious
differences between the PAM regions (referring to the dashed boxes in Fig. A1(c) and A1(f), respectively) and the rest. By
contrast, in Fig. A1(h) and A1(k) under laser energy of ~185 nJ, discernible darkened regions corresponding to the PAM
regions (referring to the dashed boxes in Fig. A1(i) and A1(l), respectively) for the OM images after PAM acquisition can be
clearly identified. The darkened regions were a result of the high-energy pulsed laser which caused the Li metal foil to fall off,
thus losing metallic luster. Hence, the damage threshold was determined to be between ~86-185 nJ for the two coupling media,
silicon oil and EC:DMC. The laser energy of ~86 nJ was used in this work, as mentioned in the main manuscript. Note that in
Fig. A1, by comparing the OM images before and after PAM image acquisition, the latter also shows darkened color randomly,
11
even in the regions without taking PAM. This may be due to the oxidation of Li metal itself during the time elapsed in the
experimental process.
Fig. A1. OM images before and after PAM acquisition under different laser energy and different acoustic coupling media.
(a,b,c) Under laser energy of ~86 nJ with EC:DMC as the acoustic coupling medium. (d,e,f) Under laser energy of ~86 nJ with
silicon oil as the acoustic coupling medium. (g,h,i) Under laser energy of ~185 nJ with EC:DMC as the acoustic coupling
medium. (j,k,l) Under laser energy of ~185 nJ with silicon oil as the acoustic coupling medium. The first column shows the
OM images before PAM acquisition, the second column shows the OM images after PAM acquisition, and the third column
shows the fusion image of the PAM image (the dashed boxes) and the OM image after PAM acquisition (the second column).
All images share the same scale bar.
Appendix B: Measurement of photoacoustic signal amplitudes from the tungsten wire and Li
In Fig. 3, the TW (instead of Li) was imaged because of the difficulty in preparing a sample with Li continuously distributed
along the depth direction inside the GFS. The results show that the penetration depth by PAM was measured to be ~160 µm.
Since Li was expected to be imaged, we here compared the photoacoustic signal amplitudes from the TW and Li. Note that in
Fig. 3, the photoacoustic signal of TW1 was measured when it was placed below a PET film with thickness of ~150 µm. Thus,
we used the same arrangement (i.e., TW below a PET film) for fair comparison. On the other hand, the photoacoustic signal
of Li was measured without a PET film above Li. The laser energy used was ~86 nJ. EC:DMC was used for ultrasound
coupling. Figure A2(a) and A2(b) show the PAM MAP (lateral) images of the TW below a PET film and Li, respectively, and
Fig. A2(c) shows the top 100 photoacoustic signal amplitudes of them. As can be seen, approximately the photoacoustic signal
amplitudes of the TW and Li were similar. The ratio of the average of the top 100 photoacoustic signal amplitudes from the
TW to that from Li was also calculated, which was 87%. Since the photoacoustic signal amplitudes from the TW and Li were
12
measured to be similar, the alternative approach to calibrating the penetration depth of PAM was considered to be reasonable.
That is, the penetration depth of ~160 µm for Li inside the GFS can be anticipated.
Fig. A2. (a,b) PAM MAP (lateral) images of the TW below a PET film (a) and Li (b). (c) The top 100 photoacoustic signal
amplitudes of the TW below a PET film and Li. (a) and (b) share the same scale bar in (a).
Appendix C: Sample preparation for the calibration of penetration depth
Figure 3(a) shows the schematic of the sample. First, a large piece of a PET film (~5 cm ´ 5 cm) was cut, polished by
sandpaper, and cleaned by ethanol. It was used as the bottom holder. Then, a piece of the GFS (~1 cm ´ 1 cm) was prepared.
TW1 was obliquely inserted into the GFS. Note that the angle between the inserted TW1 and the surface of the GFS was kept
small so that the surface of the GFS at the insertion position of TW1 will not be distorted too much. The two ends of TW1
were fixed on the bottom PET film by waterproof tapes. Then, TW2 was placed above the GFS. As shown in Fig. 3(a), TW1
and TW2 are approximately in parallel along the X direction. Similarly, the two ends of TW1 were fixed on the bottom PET
film by waterproof tapes. Another small piece of a PET film (~1 cm ´ 1 cm) was cut, polished, and cleaned, as mentioned
above. As the top cover, the small PET film was placed over the GFS with TW1 and TW2 in between. The top PET film was
pressed downward to make sure close contact of TW2 and the surface of the GFS, and then fixed with the bottom PET film
by waterproof tapes. TW3 was then placed above the top PET film and fixed by waterproof tapes. Next, a plastic film was
used to cover the stack. Three sides of the plastic film were sealed with the bottom PET film by waterproof tapes. Before fully
sealing the plastic film, the sample was put inside a glove box. The GFS was filled with EC:DEC:DMC, and then the sample
was filled with liquid (EC:DMC) to facilitate ultrasound coupling. Finally, the last side of the plastic film was sealed by
waterproof tapes inside the glove box.
Appendix D: Measurement of penetration depth by using higher laser energy
In Fig. 3, the penetration depth by PAM was measured to be ~160 µm at excitation laser energy of ~86 nJ. The laser energy
above the damage threshold can be used under certain circumstances, for example, only one-time imaging needed. Therefore,
we also calibrated the penetration depth by using higher laser energy. The same sample consisting of TWs in Fig. 3 was imaged
13
at laser energy of ~185 nJ and ~357 nJ. Figures A3(a) and A3(b) show the PAM MAP (XZ) images of the sample and
corresponding depth positions of maximum photoacoustic A-line signal amplitudes along the X direction at laser energy of
~185 nJ and 357 nJ, respectively. The penetration depth can be deeper than ~220 µm. Interestingly, strong noise was observed
with relatively strong photoacoustic signals (left regions in PAM MAP images in Fig. A3), which could be due to the too high
laser energy used. The exact reason is under investigation.
Fig. A3. PAM MAP (XZ) images of the sample consisting of TWs and corresponding depth positions of maximum
photoacoustic A-line signal amplitudes along the X direction at laser energy of ~185 nJ (a) and ~357 nJ (b). (a) and (b) share
the same scale bar in (a).
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16
|
1805.03683 | 1 | 1805 | 2018-05-09T18:23:07 | Ink-jet printed 2D crystal heterostructures | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | The availability of graphene and related two-dimensional (2D) crystals in ink form, with on demand controlled lateral size and thickness, represents a boost for the design of printed heterostructures. Here, we provide an overview on the formulation of functional inks and the current development of inkjet printing process enabling the realization of 2D crystal-based heterostructures. | physics.app-ph | physics | Ink-jet printed 2D crystal heterostructures
Francesco Bonaccorso
Istituto Italiano di Tecnologia, Graphene Labs,
Via Morego 30, 16163 Genova, Italy
[email protected]
Abstract- The availability of graphene and related two-
dimensional (2D) crystals in ink form, with on demand controlled
lateral size and thickness, represents a boost for the design of
printed heterostructures. Here, we provide an overview on the
formulation of functional inks and the current development of
inkjet printing process enabling the realization of 2D crystal-
based heterostructures.
Keywords-2D crystals; Ink-jet printing; Heterostructures;
I.
INTRODUCTION
Heterostructures have already played a central role in
technology, for the realization of, e.g., semiconductor lasers,
high mobility field effect transistors (FETs) and diodes.
Heterostructures based on two-dimensional (2D) crystals
(2DHs), i.e. isostructural system of 2D crystals assembled by
stacking different atomic planes in sandwiched structures, offer
the prospect of extending existing technologies to their ultimate
limit using monolayer-thick tunnel barriers and quantum
wells.1 In fact, the on-demand assembly of 2D crystals allows
the engineering of artificial three-dimensional (3D) crystals,
exhibiting tailor-made properties that could be tuned to fit any
application. Pioneering research has already demonstrated first
proof of principle 2DHs, such as field effect vertical tunneling
transistors based on graphene with atomically thin hexagonal
boron nitride (h-BN) acting as a tunnel barrier,2 gate-tunable p–
n diodes based on a p-type BP/n-type monolayer molybdenum
disulphide (MoS2)3 or proof-of-concept photovoltaic cells.4
Although it is not difficult to envision many possible
combinations of materials, one stack of many different layers
with atomic precision, the practical realization of such vision is
much more complicated. The ideal approach would be to
directly grow 2DHs where needed, but this target is still far
from any practical realization. Currently, three methods have
been exploited for the production of 2DHs: (I) layer by layer
stacking via mechanical transfer;5,6 (II) direct growth by
chemical vapour deposition (CVD)7 and molecular beam
epitaxy (MBE)8; and (III) layer by layer deposition of solution
processed 2D crystals. However, at this time all of the
aforementioned approaches have limitations. The layer by layer
stacking or deterministic placement (I) via mechanical transfer
relies on the mechanical exfoliation of layered materials into
atomically thin sheets.9 Moreover, in order to fabricate 2DHs
with clean interfaces (i.e., without trapped adsorbates between
the stacked layers), which is necessary for long-term device
reliability, a dry transfer procedure is preferred. This would
avoid the wet conditions with polymer coatings, which suffer
from polymer contamination. Even the most developed dry
transfer protocols may not result in perfectly clean interfaces,
as some adsorbates may get trapped between the stacked 2D
layers.10 Although this procedure is now optimized to yield
sophisticated layered structures, it is limited to vertical
structures,11 it is not suitable for layer registration with the
underlying films and, even more critical, it is impractical for
high volume manufacturing. The direct growth (II) of different
2D crystals vertically stacked is another approach suitable for
the production of 2DHs. First attempts have already shown the
feasibility of such processes. Just to highlight some examples,
h-BN has already been demonstrated to be an effective
substrate for the CVD growth of graphene.12 Vertically stacked
2DHs have been synthesized by the sequential CVD growth of
2D transition metal dicalchogenides (TMDs) on top of pre-
existing h-BN13 and graphene14,15 or by the selenization and
sulfurization of elemental metals.16,17 The co-reaction of Mo
and W-containing precursors with chalcogens18 or the in-situ
vapor-solid reactions19 have proven to be other feasible routes
for the realization of lateral and vertical 2DHs. Van der Waals
epitaxy has also been exploited, using WCl6/S, MoCl5/S and Se
as precursors and SnS2 templates.20 However, these approaches
have significant limitations in that monolayer by monolayer
growth process conditions have not been established yet. That
is, island or 3D growth is observed rather than 2D growth in
contrast to what has been observed in CVD graphene growth.21
Any industrial application will require a scalable approach. To
this aim, layer-by-layer deposition (III) from 2D crystal-based
inks (Fig. 1)22,23 could be the right strategy for scalable
production of 2DHs.
Here we will present the latest progress on the large-scale
placement of 2D crystal-based inks by inkjet printing,24 which
allows printing of layers of different 2DHs on a large scale. We
will discuss several issues that need to be optimized, such as
the uniformity of large area film stacks, the discontinuity of the
individual crystals assembling the 2DHs, which are currently
affecting the 2DH (opto)electronic properties.
II.
INKJET PRINTING OF 2D CRYSTALS
is used
Inkjet printing
to print a wide range of
(opto)electronic devices.25,26,27,28,29,30 Many factors influence
the printed features. In fact, during an inkjet printing process, a
regular jetting from the print-head nozzle is needed to avoid
printing instabilities, i.e., formation of satellite drops and
jetting deflection.31 Depending on the ink wettability behaviour
at the nozzle, unwanted spray formation may occur instead of a
regular jetting.32 Furthermore, the resolution of the printed
feature is influenced by the drop velocity v (i.e. 5-10 ms-1)
when it impacts onto the substrate. 32
ink outside
The formulation of 2D crystals-based (as well as
nanomaterials in general) printable inks is rather challenging
because the various liquid properties such as density (ρ),
surface tension (γ) and viscosity (η) have a strong effect on the
printing process itself.33 These ink physical properties need to
be carefully tuned and can be summarized in dimensionless
figures of merit (FoM) such as: the Reynolds (NRe) and Weber
(NWe) numbers,34,35 and the inverse of the Ohnesorge number, Z
(1/NOh), defined as the ratio between the NRe and the square
root of the NWe.33 Different Z values for the stable drop
formation have been proposed, 36,37 with Z values mostly
enclosed in the range 4≤ Z ≤14, although many reports have
also demonstrated stable ink-jet printing with Z values of the
38,39,40,41 In particular,
printing
nanomaterial-based inks (e.g., polystyrene nanoparticle38 and
graphene-based inks 42) have also been ink-jet printed with Z
values outside the aforementioned range. The morphological
properties of the nanomaterials (e.g., lateral size for 2D
crystals) dispersed in the ink as well as the formation of
aggregates in the ink and their accumulation on the print-head
can also contribute
instabilities. Dispersed
nanomaterials with lateral sizes smaller than ~1/50 of the
nozzle diameter (i.e., ≥ 100μm43) can reduce these damaging
effects.44,45 Moreover, wetting and adhesion31 to the substrate
and its distance to the nozzle (e.g., 1-3 mm)46 are other key
requirements for the printing. The behaviour of a droplet which
spreads on the substrate under the action of the inertia and
surface forces is characterized by the dynamic contact angle
θc,47 a parameter linked with the substrate wettability.
this range.
to printing
(RGO).48,49,50,51,52,53,54,55,56,57,58,59 Although
Graphene and related 2D crystals are emerging as
promising functional materials for ink formulation.32,42 The
first attempts in formulating 2D crystal-based inks for inkjet
printing exploited graphene oxide (GO) or reduced graphene
oxide
several
processes have been developed to chemically "reduce" the
GO flakes in order to re-establish an electrical and thermal
conductivity as close as possible to pristine graphene, RGO
contains structural defects.60 Liquid phase exfoliation (LPE) of
pristine graphite61 to obtain un-functionalized graphene flakes
is a most promising approach for the formulation of graphene-
based inks.32 Most importantly, LPE allows the formulation of
other 2D-crystal-based inks, see Figure 1, starting from the
exfoliation of their bulk counterpart. 62
by
substrate
be
overcome
In this case, the process is mostly driven by the choice of
solvents able to disperse the flakes.31,34 The first formulation
involved the use of graphene inks prepared in N-Methyl-2-
pyrrolidone (NMP)42 and Dimethylformamide (DMF)63 to print
conductive stripes, achieving sheet resistance (RS) values of
~30 kΩ/□ on glass. The formation of coffee ring effect when
graphene ink is printed on rigid substrates (glass64 and SiO2
62)
can
e.g.,
hexamethyldisilazane. Alternative routes to avoid coffee ring
effects can be either the use of low boiling point solvents, with
higher enthalpy of vaporization than water, or substrates that
promote adhesion.65 In the first case, the use of low boiling
point solvents for the exfoliation of layered crystals has to take
into account the mismatch between the γ of the solvent and the
surface energy of the sheets. This issue could be overcome by
the exploitation of co-solvents,66,67 e.g., water/alcohol
mixtures, to tune the fluidic properties of the liquid. This
allowed for the direct inkjet printing of graphene-based
conductive stripes from low boiling point solvents also on
flexible substrates achieving RS~1-2 KΩ/□. 32,68
treatments,
The inkjet printing technology has been also recently
demonstrated a promising tool to print other 2D crystals (e.g.,
MoS2, WS2) apart graphene, overcoming several still existing
drawbacks for a reliable mass production of high-quality 2D
crystal-based films/patterns,69,70,71 see Figure 2. Despite these
progresses, several issues need to be still overcome for the
optimization of 2D crystal-based ink-jet printing. The main
problem is that the common solvents used in LPE (e.g., DMF
and NMP) are toxic and have very low viscosities (< 2 mPa·s),
the latter strongly decreasing the jetting performance. In
addition, the concentration of 2D crystals in these solvents is
low (< 1 g L− 1), thus requiring many printing passes to obtain
functional films. Another issue to be faced, especially with the
use of high boiling point solvents is the required post-
processing annealing for solvent removal,72 which poses severe
limitations to the type of substrate to be used for the printing
process. Similar issues are also faced in the case of 2D crystals-
based
the
surfactants/polymers removal requires thermal and/or chemical
treatments,73 which are often not compatible with the
substrate.
in aqueous solution, where
inks prepared
Figure 1: 2D-crystal-based functional inks.
Figure
2:
Inkjet-printed
interdigitated
graphene
supercapacitor on PET (100 printing layers).
III. PRINTED HETEROSTRUCTURES
The practical realization of 2DHs, to obtain stacks of many
different layers with atomic precision, is a difficult task
especially in view of industrial application, which requires a
is
an
is a
structure
all-inkjet printed
scalable approach. In this context, "layer-by-layer deposition"
from 2D crystal-based inks by means of Langmuir–Blodgett,24
and inkjet printing69 allows the deposition of layers of different
2D crystal-based heterostructures on a large scale. Although
the printing approach is very recent, some proofs of concept
devices have already been demonstrated.33 In this context, the
simplest
in-plane
photodetector based on MoS2 channel and interdigitated
graphene electrodes.69 Another example
tunneling
transistor, where the tunneling between the top and bottom
graphene layer through a TMD layer is back gate controlled.74
this approach could be
represented by the possibility to integrate/complement other
production approaches, for example for the realization of
contacts. Very recently, a programmable logic memory device
(i.e., graphene/WS2/graphene) has been realized by inkjet
technology.75 An all-printed, vertically stacked
printing
transistors with graphene source, drain, and gate electrodes, a
TMD channel, and a BN separator has been demonstrated.78
The proposed printed vertical heterostructure has shown a
charge carrier mobility of 0.22 cm2/Vs,76 which is however
rather low. Thus new insights into the assembly of such
printed heterostructures are needed to further improve the
performances of such devices.
A key advantage of
IV. CONCLUSION
thus
The realization of printed heterostructures based on
2D crystal-inks is now emerging as a possible route for their
large scale production. However, this technology is still in its
infancy and several issues have to be solved. In fact, apart
from the uniformity of large area film stacks, the assembly of
such heterostructures suffers from discontinuity of
the
individual crystals,
structures with
(opto)electronic properties of lower performance with respect
to the one obtained by dry transfer methods such as layer by
layer stacking via mechanical transfer5 and direct growth.7,8
Thus, before the layer-by-layer deposition of 2D crystal-based
dispersions and inks can be exploited for the realization of
vertical 2D heterostructures with (opto)electronic properties
comparable with the ones achieved with the other approaches,
a strong experimental effort is needed to fully evaluate the
potentiality of this method, overcoming the aforementioned
issues.
resulting
in
Another issue to tackle, as in the case of layer-by-layer
stacking via mechanical transfer, relies on the fact that the
layer-by-layer deposition of 2D crystal-based dispersions and
inks can be exploited for the realization of vertical 2DHs but
not for lateral ones, which is a main limitation for this
approach.
ACKNOWLEDGMENT
We thank A. Ansaldo, N. Curreli, A. E. Del Rio Castillo, E.
Petroni for useful discussion. This work was supported by the
European Union's Horizon 2020 research and innovation
program under grant agreement No. 696656-GrapheneCore1.
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|
1802.02214 | 1 | 1802 | 2018-02-01T12:51:33 | Electromagnetically driven convection suitable for mass transfer enhancement in liquid metal batteries | [
"physics.app-ph",
"physics.flu-dyn"
] | Liquid metal batteries (LMBs) were recently proposed as cheap large scale energy storage. Such devices are urgently required for balancing highly fluctuating renewable energy sources. During discharge, intermetallic phases tend to form in the cathode of LMBs. These do not only limit the up-scalability, but also the efficiency of the cells. Generating a mild fluid flow in the fully liquid cell will smoothen concentration gradients and minimise the formation of intermetallics. In this context we study electro-vortex flow numerically. We simulate a recent LMB related experiment and discuss how the feeding lines to the cell can be optimised to enhance mass transfer. The Lorentz forces have to overcome the stable thermal stratification in the cathode of the cell; we show that thermal effects may reduce electro-vortex flow velocities considerable. Finally, we study the influence of the Earth magnetic field on the flow. | physics.app-ph | physics |
Electromagnetically driven convection suitable for mass
transfer enhancement in liquid metal batteries
Norbert Webera, Michael Nimtza, Paolo Personnettaza,c, Alejandro Salasa,b,
Tom Weiera
aHelmholtz-Zentrum Dresden – Rossendorf, Bautzner Landstr. 400, Dresden, Germany
bInstituto Tecnol´ogico y de Estudios Superiores de Monterrey, Monterrey, Mexico
cPolitecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
Abstract
Liquid metal batteries (LMBs) were recently proposed as cheap large scale en-
ergy storage. Such devices are urgently required for balancing highly fluctuating
renewable energy sources. During discharge, intermetallic phases tend to form
in the cathode of LMBs. These do not only limit the up-scalability, but also the
efficiency of the cells. Generating a mild fluid flow in the fully liquid cell will
smoothen concentration gradients and minimise the formation of intermetallics.
In this context we study electro-vortex flow numerically. We simulate a recent
LMB related experiment and discuss how the feeding lines to the cell can be
optimised to enhance mass transfer. The Lorentz forces have to overcome the
stable thermal stratification in the cathode of the cell; we show that thermal
effects may reduce electro-vortex flow velocities considerable. Finally, we study
the influence of the Earth magnetic field on the flow.
Keywords:
liquid metal battery, electro-vortex flow, mass transfer
enhancement, swirl, Rayleigh-B´enard convection, OpenFOAM, thermal
stratification
Preprint submitted to Elsevier
February 8, 2018
1. Introduction
Integrating highly fluctuating renewable energy sources (such as photovoltaics
and wind power) into the electric grid calls for large scale energy storage. Such
storage must be, first of all, safe and cheap. The liquid metal battery (LMB)
promises both. After being intensively investigated in the 1960s, and aban-
doned later, LMB research experienced a renaissance some ten years ago. For
an overview of the pioneering work, see [1–3] (recommended [4]) and for the
recent work [5] and [6].
Figure 1: Sketch of a typical LiBi liquid metal battery with an intermetallic phase forming in
the cathode (left) and vertical temperature distribution in the three layers for pure diffusion
(right).
Fig. 1a shows a sketch of a typical LMB. A dense metal on the bottom
(cathode, positive electrode) is separated by a liquid salt from a lighter metal
at the top (anode, negative electrode). All three phases float above each other;
the salt acts as the electrolyte. The word "liquid metal battery" names only
a family of electrochemical cells (which may consists of many different active
metals combinations). Typical cell couples include CaBi [7, 8], CaPb [9],
KHg [10, 11], LiBi [1, 12–16], LiPb [1, 17], LiSb [5, 17], LiSn [1, 14, 18–
20], LiZn [1], MgSb [5, 21, 22], NaBi [1, 14, 18, 20, 23–27], NaHg [5, 28, 29],
NaPb [1, 14, 20, 27, 30], NaSn [1, 11, 18, 20, 31, 32] and NaZn [33, 34] as
well as exotic ones such as LiSe [1, 35, 36] or LiTe [1, 14, 15, 35, 36].
2
Li3BiLielectrolyteLi in Bi∆Tz During discharge, the anode metal is oxidised, crosses the electrolyte layer
and alloys in the bottom layer with the dense metal ("concentration cell").
Commonly, the ohmic resistance of the electrolyte layer represents the most im-
portant overvoltage. However, at higher discharge currents concentration polar-
isation enters the field [5, 11, 22, 28, 32, 37]. Example: when discharging a LiBi
cell, Li-rich alloy will concentrate at the cathode-electrolyte interface. When a
certain local concentration is exceeded, a solid intermetallic phase (Li3Bi) will
form (fig. 1a) [1, 24]. Such intermetallics often float on the cathode metal [38].
Sometimes they expand during solidification. As the walls impede a lateral
expansion, the intermetallic will form a dome until finally short-circuiting the
electrolyte. Especially in Ca based cells, locally growing dendrites may addi-
tionally short-circuit the cell [7]. Besides of all the mentioned drawbacks, the
formation of intermetallics has one advantage:
it removes anode metal from
the melt and keeps thereby the voltage constant. It should be also mentioned
that some intermetallics have high electrical resistances while others are good
conductors.
When charging the cell of fig. 1a, the positive electrode-electrolyte interface
will deplete of Li and a similar concentration gradient may develop [24]. This
effect is undesirable, too. Finally, all the same effects may theoretically happen
in the anode compartment, too, if an alloyed top electrode is used (e.g. Ca-Mg
[8, 21]). However, such effects were not reported, yet.
It was early proposed that a mild fluid flow may counterbalance concentra-
tion gradients and increase thereby the efficiency of LMBs [1, 24, 37]. While
"mechanical stirring" [1, 37] seems difficult to realise, a localised heating or cool-
ing inducing thermal convection may be a very good option [39, 40]. Electro-
vortex flow (EVF) may be used for an efficient mass transfer enhancement, too
[41–43]. Simply saying, EVF always may develop when current lines are not in
parallel. It can therefore easily be adjusted by choosing the diameter/geometry
of the current collectors and feeding lines appropriately. EVF drives a jet away
from the wall, forming a poloidal flow [44]. For a classical example of the origin
of EVF, see Lundquist [44] and Shercliff [45], for a good introduction Davidson
3
[46] and a detailed overview including many experiments Bojarevics et al. [47].
The relevance of EVF for LMBs is outlined by Ashour et al.
[43]. It should
also be mentioned that other flow phenomena like the Tayler instability [48–
56], Rayleigh-B´enard convection [57, 58] or interface instabilities [59–63] may
enhance mass transfer in LMBs, as well.
This article is dedicated (mainly) to electro-vortex flow. It's aim is twofold:
first, we will show how the connection of the supply lines to the cell influences the
flow. Second, we study how electro-vortex flow and stable thermal stratification
interact. For this purpose we combine numerical simulation with a simple 1D
heat conduction model. These models – and the experiment which inspired our
studies – are described in the following section.
2. Physical, mathematical and numerical model
In this section we will first present the experiment [64] which inspired this
article. Thereafter we explain the way in which we estimate the temperature
gradient appearing in the cathode of a liquid metal battery (LMB). Finally, we
give an introduction to the 3D numerical models used.
2.1. Liquid metal electrode experiment
Fig. 2 illustrates the mentioned experiment, conducted by Kelley & Sadoway
[64]. A cylindrical steel vessel contained a melt of eutectic lead-bismuth. An
electric current (up to 0.375 A/cm2) was applied between a bottom and top
electrode. The bottom current was supplied centrically or laterally. The upper
electrode consisted of a nickel-iron foam; such foam is often used in LMBs to
contain the anode metal [6]. As the setup was heated from below, Rayleigh-
B´enard cells appear. If an internal current was applied, the flow became much
more regular at 0.05 A/cm2.
It was deduced by the authors that convection
cells align with the magnetic field. We will demonstrate how electro-vortex flow
may give an alternative explanation for the increase in order.
We use the following material properties of lead bismuth eutectic (LBE) at
160 ◦C [43]: a kinematic viscosity of ν = 2.7 · 10−7 m2/s, a thermal expansion
4
Figure 2: Dimensions of the experiment and simulation model (in mm). The gray values are
not exactly known; they are estimated from the sketch in [64]. The wires are assumed to be
made of copper.
coefficient of β = 1.3 · 10−4 K−1, an electrical conductivity of σ = 9 · 105 S/m, a
density of ρ = 10 505 kg/m3, a specific heat capacity of cp = 148 J/kg/K, a ther-
mal conductivity of λ = 10 W/m/K, a thermal diffusivity of α = 6 · 10−6 m2/s,
a Prandtl number of P r = 0.04 and a sound velocity of us = 1 765 m/s [65–67].
The electrical conductivity of the vessel is assumed to be σ = 1.37· 106 S/m and
of the wires and copper plate σ = 58.1 · 107 S/m. The electrical conductivity
of the Fe-Ni foam is not easy to determine [68, 69], especially because it is not
sure if the liquid metal enteres the pores. We do not model the porosity and
use an electric conductivity of σ = 1.37 · 106 S/m without further justification.
Geometrically, the described experiment perfectly represents a liquid cath-
ode of an LMB. However, the temperature gradient in a working LMB depends
on the boundary conditions. For a single cell with insulated lateral walls it will
rather be opposite to that in the experiment. As the electrolyte layer has the
highest electrical resistance (four orders larger than the metals), most heat will
be generated there [57]. Fig. 1b shows a typical vertical temperature profile
through all three layers. If no thermal management system induces additional
5
26.46488.916fluidNiFefoamcopperplatesteelvesseløø106.610012.55.513105.55.5øøøøøø Figure 3: Voltage drop and temperature difference in the cathode for pure conduction in a
LiBi cell [70].
temperature gradients (as suggested in [21, 40]) a stable thermal stratification is
expected in the cathode. We will study here, if electro-vortex flow can overcome
this stratification. For this purpose, we need a characteristic vertical temper-
ature gradient. As no LMB exists, which operates at such low temperature as
the experiment, we use a similar cell to define a typical vertical temperature
gradient: a LiBi LMB operating at 450 ◦C.
2.2. Heat conduction model
The temperature difference between top and bottom of the cathode of an
LMB can be estimated using the simple 1D heat conduction model developed
by Personnettaz [70] (for 3D studies of heat transfer in Li-LMBs, see [58, 71]).
The model was developed with the assumption of a fluid at rest, constant
and homogeneous material properties and a uniform current density distribu-
tion. The heat generation was included only in the form of Joule heating in
the electrolyte layer, due to its high electrical resistivity ( ρel,salt
ρel,metal
> 103). The
lateral wall of the cell was considered adiabatic and the top and the bottom
6
345678910hsaltinmm0.00.51.01.52.0JinA/cm20.4V0.3V0.2V0.1V0.00.51.01.52.02.53.03.54.0∆TcathodeinK boundaries are set to a constant temperature T = 450 ◦C. Thanks to the men-
tioned hypotheses a 1D model along the vertical coordinate is able to completely
describe the temperature distribution inside the cell. This profile provides an
upper bound for the temperature and a valuable initial guess of the temperature
stratification in the cathode. The cell studied by Personnettaz was a LiKCl-
LiClBi LMB [70]. We use his model to estimate the temperature difference
between the top and bottom of the cathode as
∆T =
hBihsalt (2hLiλsalt + hsaltλLi) ρel,saltJ 2
2hBiλLiλsalt + 2hLiλBiλsalt + 2hsaltλBiλLi
(1)
with h, λ, ρel,salt and J denoting the layer heights, the thermal conductivities,
the specific resistance of the salt and the current density. The thickness of the
cathode is set to 16 mm as in the experiment and the Li-layer to 32 mm in order
to maximise the cell capacity (see [70]). The geometrical parameters and the
transport properties employed are collected in tab. 1. Depending on the current
density J and thickness of the electrolyte hsalt, ∆T over the cathode changes as
illustrated in fig. 3.
We limit the maximum ohmic over-voltage to 0.4 V which corresponds to a
cell efficiency of about 66 %. We assume further that the electrolyte is 5 mm
thick (realistic values are 3-15 mm [72]) and find the following law that describes
the dependence of the temperature difference by the current I (assuming a
cathode base area of 62.1 cm2) as
∆T (K) = 4.37 × 10−4 (K/A2) · I 2(A2).
(2)
This formula provides only a rough estimate of a possible temperature difference
in the cathode. The multiplicative factor strongly depends on the materials se-
lection and their transport properties at the operation temperature. Anyway
it provides a first estimate that allows to study the competition of two cur-
rent driven phenomena, electro-vortex flow and thermal stratification, in a low
temperature liquid metal experiment.
7
Table 1: Properties of the pure substances at T = 450 ◦C and dimension for the pure heat
conduction model [73–77]. The molten salt employed is KCl – LiCl.
property
unit
Li
salt
Bi
hi
k
σel
ρel
mm
32
5
16
W/(m K)
53.0
0.69
14.2
S/m
10−2 Ω m
–
–
157
6.36
–
–
2.3. Numerical model
The numerical model is implemented in OpenFOAM [78]; for all details and
the validation of the electro-vortex flow solver see [79]. Basically, it computes
the electric potential φ and current density J on a global mesh as
∇ · σ∇φ = 0
J = −σ∇φ
(3)
(4)
with σ denoting the electrical conductivity. All conducting regions (of different
conductivities – see fig. 3) are fully coupled. The results are then mapped on a
separate fluid mesh (blue area in fig. 3). Induced currents and magnetic fields
are neglected, which is justified as long as the velocities are small. On the fluid
mesh the following set of equations is solved:
∂u
∂t
+ (u · ∇) u = −∇p + ν∇2u +
(cid:90) J (r(cid:48)) × (r − r(cid:48))
J × B
ρ
(5)
(6)
dV (cid:48)
B(r) =
µ0
4π
r − r(cid:48)3
with t, u, p, ν, ρ, µ0, r and dV denoting the time, the velocity, the pressure,
the kinematic viscosity, the density, the vacuum permeability, the coordinate
and the differential volume, respectively. The fluid mesh has at least 200 cells
on the diameter, which is fine enough according to [43].
Thermal effects are modelled in the fluid only using the Oberbeck-Boussinesq
approximation [80] (for its validity, see [43, 81]). The following set of equations
8
is solved
∂u
∂t
∂T
∂t
+ ∇ · (uu) = −∇pd + ν∇2u − g · r∇ρk +
∇ · u = 0
+ ∇ · (uT ) =
∇2T
λ
ρ0cp
J × B
ρ0
(7)
(8)
(9)
with u, p, ν, g, r, T , cp J and σ denoting velocity, pressure, kinematic viscosity,
gravity, position vector, temperature, specific heat capacity, current density and
electrical conductivity, respectively. The density ρ = ρ0ρk = ρ0(1− β(T − Tref))
is calculated using the mean density ρ0 at reference temperature Tref and the
coefficient of thermal expansion β. J and B are determined by the electro-
vortex solver as described above; the resulting Lorenz force is assumed to be
constant in time, i.e.
induced currents are neglected. At least 250 cells on
the diameter and strongly refined boundary layers are used. No-slip boundary
conditions are used for velocity. This is justified even for the free surface due to
the oxide film formed there [82]. The side walls are modelled as adiabatic while
a constant temperature is applied at the top and bottom boundaries.
3. Results
This section is arranged as follows: firstly, we compare the influence of a
symmetric and asymmetric current supply on pure electro-vortex flow (fig. 4).
Thereafter, we study the influence of the Earth magnetic field and of thermal
stratification on both connection types (fig. 5 and 6). Further, we give estimates
of the flow velocity depending on the cell current.
Fig. 4a illustrates the current path, streamlines and velocities for a lateral
supply line. Electro-vortex flow is simulated alone; the applied current is 40 A.
The flow profile is essentially horizontal forming two kidney-shaped vortices.
The velocity reaches 2.5 mm/s. The horizontal jet (also shown in 4c) is uncom-
mon for electro-vortex flow, but can easily be explained. As the current flows
mainly horizontally through the copper plate, it induces a magnetic field in the
fluid. This field points towards the observer (in fig. 4a and c). The current in
9
Figure 4: Current path and velocity streamlines for a current supply from the side (a). Velocity
on a vertical plane for symmetric (b) and lateral current supply (c). The current is I = 40 A;
the results show electro-vortex flow alone.
the liquid metal flows upwards (vertically) and interacts with the induced field.
Consequently, the Lorentz force points to the right and drives the observed flow
in "prolongation" of the current supply. For similar experiments, see [83, 84].
Fig. 4b shows the flow for a symmetric current supply, again at 40 A. A
typical poloidal flow develops as it was often observed experimentally [47, 85–
89]. Similar flow structures are very well known from vacuum arc remelting and
electro-slag remelting [90–97]. However, depending on the exact geometry, the
direction of the flow might be reversed [98–101]. In our simulation, the velocities
reach 0.6 mm/s for the symmetrical setup. This is only 25 % of the flow velocity
observed for a lateral current supply. Due to the shallow liquid metal layer, a
poloidal flow will dissipate strongly in the boundary layer.
The simulated velocities are not directly comparable to the experiment[64].
The latter was additionally heated from below (vertical temperature difference
of approximately ∆T = 10 K). As shown numerically by Beltr´an, the experimen-
tally observed flow is mainly caused by Rayleigh-B´enard convection. Also he
used the linear expansion coefficient [64, 102] which is three times smaller than
the volumetric one [43], his velocity profile and magnitude (3 mm/s) matches
very well to the experimental results (compare fig. 9 in [102] and fig. 4 in
10
(a)(b)(c) [64]). Electro-vortex flow will generally lead to velocities one order of mag-
nitude smaller (Kelley and Sadoway [64] used currents of 23.3 A at most; our
results are for 40 A). However, electro-vortex flow will surely influence the flow
structure and may explain the increase in order of the flow which was observed
experimentally.
In the next step we focus on the symmetric current supply (with the poloidal
flow) only, and analyse the influence of a vertical magnetic background field.
When we add the magnetic field of the Earth (measured in Dresden as B =
(15 · ex, 5 · ey, 36 · ez) µT), the original poloidal flow (fig. 5a) becomes strongly
helical (fig. 5b). The appearance of such azimuthal swirl flow is well known from
experiments [43, 85, 103] and can be easily explained. Radial cell currents and a
vertical magnetic background field lead to azimuthal Lorentz forces [87, 92, 103].
Compared to a recent experiment by Ashour et al. [43] with a point electrode
on the top, we observe considerably stronger swirl (compare fig. 5b with fig. 5 in
[43]). We attribute this difference to the location of the azimuthal forcing. Here,
the force is well distributed in the whole volume; in [43] it is concentrated only
in the centre of the liquid metal "sheet". We suppose the distributed azimuthal
Lorentz force to better suppress the poloidal flow by forcing the streamlines into
a dissipative Ekman layer [92]. Fig. 5c shows the volume averaged mean velocity
of the poloidal and azimuthal flow – with and without the Earth magnetic field.
If we add a vertical field, azimuthal swirl appears (compare the dashed curve).
At the same time, the poloidal flow is strongly reduced (by a factor of 1/2). This
fits nicely to Davidsons "poloidal suppression" model [92]. This is remarkable,
because simulations with a point electrode (see [43]) did not show such a strong
suppression.
Keeping the symmetric current supply, we now focus on the influence of
the thermal stratification. During operation of an LMB, the cathode will be
heated from above; the thermal stratification will be stable. At first glance, this
configuration is similar to arc remelting. There, an electric arc heats the melt
from above. However, the bath is cooled rather from the side than from below
which leads to strong thermally driven flow [104], but we have a stable thermal
11
Figure 5: Streamlines and velocity without (a) and with the Earth magnetic field (b). Volume
averaged mean velocities of the azimuthal and poloidal flow for both cases (c). Velocity on
a vertical plane for symmetric current supply without temperature (d) and with a negative
temperature gradient of 0.7 K (e). Volume averaged mean velocity (f) and mean velocity
gradient evaluated at the top surface (g) of electro-vortex flow alone, with an additional
Earth magnetic field (Bz) and with a stabilising temperature gradient. I = 40 A.
stratification instead. Based on the heat conduction model described in section
2 we apply a vertical temperature gradient of ∆T = 0.7 K (at 40 A). The stable
thermal stratification dampens the electro-vortex flow (compare fig. 5d and e).
While the general flow structure does not change, especially the velocity near
the bottom wall decreases by a factor of 2/3. This result cannot be compared to
the experiment, as Kelley and Sadoway heated from below (and we from above).
12
(d)(e)(a)(b)(c)(f)(g) A temperature gradient as in the experiment is not expected to appear during
"normal" operation of an LMB; however, an additional heating or cooling for
mass transfer enhancement (as proposed in [39, 40]) can easily lead to similar
configurations.
Using a thermal diffusivity of α = 6 · 10−6 m2/s, a mass diffusivity of D =
1.2 · 10−8 m2/s [6], a typical velocity scale of u =1 mm/s and the height of
the liquid metal ∆h = 16 mm, we find a thermal Peclet number of Peth =
u∆h/α ≈ 5 and a concentration Peclet number of Pec = u∆h/D ≈ 6 000
[105]. Obviously, convection dominates mass transfer. We use thererfore two
quantities to estimate mixing in the cathode: the volume averaged velocity as
global measure, and the mean velocity gradient at the foam-cathode interface
as local one. Fig. 5f and g show both quantities for electro-vortex flow alone,
with the Earth magnetic field ("Bz") and with a stabilising thermal gradient.
The azimuthal flow, caused by the Earth magnetic field, yields the highest
velocities. A vertical temperature gradient does barely influence the horizontal
flow. The poloidal electro-vortex flow ("EVF alone") is considerably slower –
it is strongly dissipated at the bottom wall. The vertical temperature gradient
effectively breaks the downwards flow. Interestingly, a strong flow in the volume
leads also to strong velocity gradients at the interface.
We now consider the lateral current supply, and study again the influence
of temperature and the Earth magnetic field. The prevailing horizontal flow is
hardly influenced by a stabilising vertical temperature gradient. The flow struc-
ture changes only slightly; the velocities with and without temperature gradient
are almost the same (compare fig. 6c and d). Taking into account the Earth
magnetic field changes the flow much more (compare fig. 6a and b). The hori-
zontal current and vertical magnetic background field generate a Lorentz force
which deflects the jet in clockwise direction. Presumably the stronger dissipa-
tion in the boundary layers decreases the velocity slightly. Most importantly,
the Earth magnetic field does not lead to swirl flow in this configuration – the
jet is only deflected. Fig. 6e and f show the mean velocity and the mean velocity
gradient for pure electro-vortex flow, with the Earth magnetic field and with
13
the stabilising temperature gradient. The differences are only marginal.
Figure 6: Electro-vortex flow for a lateral supply wire without (a) and with the Earth magnetic
field (b). Flow in the cross section of the jet without (c) and with a stabilising thermal gradient
(d). The current for (a)-(d) is 40 A. Volume averaged mean velocity (e) and mean velocity
gradient (f) for electro-vortex flow alone, with the additional Earth magnetic field and with a
stabilising temperature gradient.
4. Summary & outlook
We have shown, how electro-vortex flow (EVF) has the potential to enhance
mass transfer in liquid metal batteries (LMBs).
In a first step we discussed
why such mass transfer enhancement is important. Considering the high con-
centration Peclet number (in the order of 103), we pointed out that convection
14
(a)(b)(c)(d)(e)(f) (and not diffusion) will dominate mass transfer. We further emphasised that
mostly (but not only) mixing of the positive electrode during discharge is highly
beneficial. We studied the flow structure and magnitude of EVF numerically.
Moreover, we discussed the influence of stray magnetic fields, the connection of
the supply lines and a stable thermal stratification on electro-vortex flow.
A lateral current supply to the cathode will generate a horizontal flow. In
contrast, a centrical current supply below the cathode will induce a vertical
jet. Looking only on this flow-direction, we would expect a vertical flow to be
better suited for enhancing mass transfer. It will remove reaction products di-
rectly from the cathode-electrolyte interface. However, the vertical (or better:
poloidal) flow has three disadvantages: (1) it's mean velocity is much smaller
compared to the horizontal flow, (2) it is dampened by the stable thermal strat-
ification and (3) it will turn to a swirling flow under presence of the Earth mag-
netic field. In contrast, the horizontal jet will not be dampened considerably by
a thermal stratification nor be strongly influenced by the Earth magnetic field.
We believe therefore the lateral supply line to be better suited for enhancing
mass transfer. Concerning the swirl flow we could (at least partially) confirm
Davidsons model of poloidal suppression.
Our models are strongly simplified: we ignore induced currents and magnetic
fields; the simulation of thermal convection and EVF is decoupled. A next step
would be therefore the development of a fully coupled EVF-thermal convection
model as well as it's coupling with a real mass transfer (e.g. Li in Bi) model. Of
course, velocity and concentration measurements in a real 3-layer LMB would be
a large step forward. Performing Kelley & Sadoway's experiment with an inverse
temperature gradient could allow a further experimental study of the interaction
between EVF and thermal convection. Such an experiment should preferably
conducted at room temperature to ensure well defined boundary conditions for
temperature.
15
Acknowledgements
This work was supported by the Deutsche Forschungsgemeinschaft (DFG,
German Research Foundation) by award number 338560565 as well as the
Helmholtz-Gemeinschaft Deutscher Forschungszentren (HGF) in frame of the
Helmholtz Alliance "Liquid metal technologies" (LIMTECH). The computa-
tions were performed on the Bull HPC-Cluster "Taurus" at the Centre for In-
formation Services and High Performance Computing (ZIH) at TU Dresden and
on the cluster "Hydra" at Helmholtz-Zentrum Dresden – Rossendorf. Fruitful
discussions with V. Bojarevics, P. Davidson, D. Kelley, F. Stefani and T. Vogt
on several aspects of electro-vortex flow and thermal convection are gratefully
acknowledged. N. Weber thanks Henrik Schulz for the HPC support.
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|
1806.04608 | 1 | 1806 | 2018-06-12T15:30:01 | Lithography-free control of the position of single walled carbon nanotubes on a substrate by focused ion beam induced deposition of catalyst and chemical vapor deposition | [
"physics.app-ph",
"cond-mat.mes-hall"
] | We introduce a novel nanofabrication technique to directly deposit catalyst pads for the chemical vapor deposition synthesis of single-walled carbon nanotubes (SWCNTs) at any desired position on a substrate by Gallium focused ion beam (FIB) induced deposition of silicon oxide thin films from the metalorganic Tetraethyl orthosilicate (TEOS) precursor. A high resolution in the positioning of the SWCNTs is naturally achieved as the imaging and deposition by FIB are conducted concurrently in situ at the same selected point on the substrate. This technique has substantial advantages over the current state-of-the-art methods that are based on complex and multistep lithography processes. | physics.app-ph | physics | Lithography-free control of the position of single walled carbon
nanotubes on a substrate by focused ion beam induced
deposition of catalyst and chemical vapor deposition
El-Hadi S. Sadki1*, Ryo Matsumoto2, Hiroyuki Takeya2, and Yoshihiko Takano2*
1Physics Department, College of Science, UAE University, Al Ain, UAE
2International Center for Materials Nanoarchitectonics (MANA), National Institute for
Materials Science (NIMS), Tsukuba 305-0047, Japan
E-mail: [email protected], [email protected]
We introduce a novel nanofabrication technique to directly deposit catalyst pads for the
chemical vapor deposition synthesis of single-walled carbon nanotubes (SWCNTs) at any
desired position on a substrate by Gallium focused ion beam (FIB) induced deposition of
silicon oxide thin films from the metalorganic Tetraethyl orthosilicate (TEOS) precursor. A
high resolution in the positioning of the SWCNTs is naturally achieved as the imaging and
deposition by FIB are conducted concurrently in situ at the same selected point on the
substrate. This technique has substantial advantages over the current state-of-the-art methods
that are based on complex and multistep lithography processes.
1
Single-walled carbon nanotubes (SWCNTs), with their superior electronic and mechanical
properties,1-3) are promising nanoscale materials for prospective nanodevice applications in
electronics4-7) and molecular nano-sensing.8,9) However, there are still many technical
nanofabrication challenges hindering their implementation in commercial electronics
products.5) One of main experimental challenges is the control of their position on a
substrate.4) The standard nanofabrication method used to achieve this task requires several
steps. First, alignment marks are made on the substrate by electron beam lithography, metal
evaporation or sputtering, and lift-off. Then the nanotubes are either dispersed from a
solution on the substrate, or are synthesized by chemical vapor deposition (CVD), after
another electron beam lithography, evaporation or sputtering of catalyst films for the CVD
process, and lift-off are conducted. The alignment marks are used as reference points to
locate the nanotubes on the substrate for further electron beam lithography, evaporation or
sputtering, and lift-off processes to make electrical contacts onto the nanotubes for either
electrical transport properties characterization or device fabrication. This is clearly a lengthy
and complex multistep nanofabrication procedure. Furthermore, the resolution in the
positioning of the nanotubes on the substrate is limited by the hardware and software
performance of the used electron beam lithography system in resolving the locations of the
alignment marks.
In this paper, we propose a novel nanofabrication method for the positioning of SWCNTs
on a substrate without the use of lithography and alignment procedures. It consists of using
a gallium focused ion beam (FIB) to induce the deposition of silicon oxide thin films pads
from the precursor Tetraethyl orthosilicate (TEOS) on specific locations on the substrate,10)
and the deposited films act as catalysts for the CVD synthesis of the SWNCTs at exactly the
deposition locations. It is analogous to directly "write" or "draw" the catalyst films pads on
the substrate, with the TEOS molecules acting as the "ink". In this method, there is no need
for alignment procedures as the imaging and film catalyst deposition are conducted
concurrently in situ at the same selected point on the substrate by the FIB. Furthermore, a
high resolution in the positioning of the films is achieved, as it is limited only by the diameter
of the ion beam used, which is in the order of ten nanometers only.11) It is noted in a paper
by Pander et al.12) that FIB was used to pattern catalyst films (pre-deposited by sputtering)
on a substrate leading to the CVD synthesis of vertically-aligned carbon nanotubes bundles
or "forests". Although, their patterning method requires extra steps than ours (e.g. sputtering
of the films in a different facility), it is more suited for applications that require vertically-
aligned and high-density carbon nanotubes, such as superlenses, antennas, and thermal
metamaterials.12)
2
In this work, the synthesized SWCNTs are characterized by scanning electron microscopy
(SEM), Atomic force microscopy (AFM), and Raman spectroscopy. The composition and
morphology of the catalyst thin films are investigated by Energy-dispersive X-ray
spectroscopy (EDS) and AFM, respectively. The yield of the synthesized SWCNTs is studied
as function of the dimensions of the deposited thin films pads, and the optimum values to
obtain on average only one SWCNT grown from a thin film pad are found.
Figure 1 shows a schematic diagram of the nanofabrication process. First, in a commercial
FIB system (SMI9800SE, SII NanoTechnology Inc), a gallium focused ion beam is used to
decompose TEOS molecules at specific locations on a silicon oxide substrate, and induce
the deposition of silicon oxide thin films pads on these locations. The FIB induced deposition
is conducted with a gallium ion beam energy of 30 KeV, and under a pressure of 3 × 10-3 Pa.
The areas of the deposited thin film pads used in this study are 2 m × 2 m, 5 m × 5 m,
and 5 m × 10 m, with thickness ranging from 3 to 700 nm. After the films' deposition,
carbon nanotubes are synthesized by thermal CVD in a quartz tube furnace (Asahi Rika
Corp.). The CVD recipe is as follows: The furnace is pre-heated to 900 oC in air. The
substrate is inserted directly from room temperature inside the furnace, and annealed in a
flow of O2 (100 sccm) and Ar (400 sccm) mixture for 30 min at 900 oC. Next, the furnace is
evacuated down to a pressure of 1 Pa, then Ar is injected inside the furnace until the pressure
reaches 1 atm, and followed by a flow of H2 (200 sccm) for 1 min. Finally, the synthesis step
of the carbon nanotubes from the thin films pads is conducted under the co-flow of CH4 (300
sccm) and H2 (200 sccm) for 20 mins. After the synthesis, the furnace is cooled down to
room temperature in H2 flow.
Figure 2 presents SEM images of the synthesized carbon nanotubes (SU-70, Hitachi).
From a film pad deposited over an area of 5 m × 10 m, and a thickness of 10 nm, tens of
carbon nanotubes are grown, with lengths up to several microns (Fig. 2(a)). On the other
hand, only one and long (several tens of microns) carbon nanotube is obtained from a 2 m
× 2 m pad, with the same thickness of 10 nm (Fig. 2(b)).
To elucidate the nature of the synthesized carbon nanotubes, AFM (Nanocute, Hitachi),
and Raman spectroscopy (InVia, Renishaw) are used. An AFM topography image,
conducted in the cyclic contact AC mode, of a typical synthesized carbon nanotube is shown
in Fig. 3(a). From its height profile (Fig. 3(b)), the estimated diameter of the nanotube is
about 1.7 nm. The Raman spectroscopy measurement of a synthesized SWCNT is shown in
Figs. 3(c) and 3(d). The G-band peak (detected with a 532 nm wavelength laser) appears as
3
d
RBM
/
248
expected at around 1580 cm-1, and there is no apparent D-band peak, which indicates that
the synthesized SWCNT is nearly defect-free.13) The RBM peak is detected (with a 633 nm
wavelength laser) at the frequency RBM = 194 cm-1 that corresponds to a SWCNT's diameter
(nm).13) Furthermore, to define the
of d = 1.3 nm according to the formula
chirality of this SWCNT, a Kataura plot13,14) analysis is used as shown in Fig. 3(e). The
laser's energy of 1.96 eV (633 nm wavelength) should be in resonance (with a typical
resonance window of 50 meV) with one of the optical transitions of the SWCNT, which, in
this case, corresponds to the metallic SWCNT, with the chirality (12,6) and diameter of 1.26
nm. This is indeed in excellent agreement with the calculated value of 1.3 nm from the RBM
frequency. All the synthesized SWCNTs in this work have typical diameters between 1 to 3
nm.
It is widely accepted, and confirmed both experimentally and theoretically, that the main
mechanism for the synthesis of carbon nanotubes by CVD is the so-called vapor-liquid-solid
(VLS) mechanism, in which catalyst nanoparticles acts as "seeds" for the growth of carbon
nanotubes.15,16) Figure 4(a) shows an AFM topography image of a SWCNT emerging from
a cluster of nanoparticles originating from a deposited film of 10 nm in thickness. The
diameter of the nanoparticles is comparable to that of the synthesized SWCNTs (Fig. 4(b)),
which proves that they can act as catalysts for the synthesis of the SWNCTs via the VLS
mechanism. However, the most common catalyst nanoparticles used for the synthesis of
carbon nanotubes by CVD are made of the transition metals Fe, Co, or Ni,15-17) which are
absent in this current work. To explore the materials composition of the catalyst
nanoparticles obtained
(Genesis APEX4,
EDAX/AMETEK Inc) in the SEM facility is used. Figure 4(c) shows typical EDS spectra,
conducted with electron beam energy of 5 KeV, of a 10 nm thickness film after FIB
deposition, and on the resulting nanoparticles from the same film after CVD. After the FIB
deposition, in addition to Si and O, the film contains significant amounts of gallium and
carbon elements. Clearly Ga originates from the FIB, and carbon from the TEOS precursor
or/and carbon contamination in the FIB system chamber. However, after CVD, the Ga and
C peaks are absent, and only that of Si and O remain. This is explained by the fact that during
the used CVD process carbon is burned away by the oxygen annealing, and gallium is
evaporated at the high operating temperature (900 oC). Furthermore, it is found that if the
CVD recipe does not include an annealing step in O2, carbon nanotubes are not synthesized
(See supplementary data). Hence, the removal of carbon by annealing before the synthesis
step is crucial.
in our experiments, EDS analysis
4
From the above analysis, it is concluded that the catalyst nanoparticles in our work are
made of silicon oxide or of the general non-stoichiometric form SiOx. Indeed, several
previous reports have shown that SiOx nanoparticles can be used as catalyst for the synthesis
of SWCNTs by CVD.18-22) Moreover, it has been recently reported by Zhang et al.22) that
SWCNTs could be selectively grown with metallic or semiconducting properties by tuning
the size of the catalyst SiOx nanoparticles and the CVD recipe. It is noted that our CVD
recipe is similar to one of the reported recipes in Ref. 22. However, in contrast to their results,
we could not obtain SWCNTs without the O2 annealing step. This could be explained by the
expected low content of carbon in their SiOx films, which were made by sputtering, in
contrast with our FIB deposited films.
Different FIB deposited thin films dimensions and CVD recipes were tried in order to
optimize the control of the yield of the synthesized SWCNTs (See supplementary data).
Specifically, to obtain just one SWCNT on average the optimum initial film dimensions are
2 m × 2 m, and 10 nm, for the area and thickness, respectively. If either the area or
thickness is increased, it is found that the yield (i.e. the number) of the synthesized SWCNTs
increases. Any area or thickness smaller than the optimized values yields to no carbon
nanotubes synthesis in general (See supplementary data).
For applications, our suggested nanofabrication technique will be very useful when the
precise positioning of a SWCNT at or near a specific point on a substrate is required.
Examples are the synthesis of a SWCNT directly on metal electrodes for electrical transport
characterization,6,23-25) and the positioning of a SWCNT over a nanopore for biological
molecules sensing.26) On the other hand, if a high resolution in the positioning of individual
SWCNTs is not required and/or a large area on a substrate needs to be patterned by SWCNTs,
then conventional lithography techniques would be more effective in terms of processing
time and cost. Furthermore, for nanodevice applications, our method can be dramatically
improved by simultaneously controlling the alignment of the synthesized SWCNTs by either
substrate-oriented growth25,27,28) or gas flow-rate CVD.29,30) Another interesting idea is to
explore different precursors for the FIB induced deposition that might lead to more efficient
catalyst nanoparticles for the CVD synthesis of carbon nanotubes.
In summary, we introduce a novel nanofabrication technique for controlling the position
of single walled carbon nanotubes on a substrate, without the use of lithography methods. It
consists of the deposition of silicon oxide nanoparticles thin films by gallium focused ion
beam at desired points on a substrate, with the nanoparticles acting as catalysts for the CVD
5
synthesis of single walled carbon nanotubes at these specific points. The optimum area and
thickness of the thin film catalyst to yield to the synthesis of only one nanotube on average
is determined. The proposed technique is an important contribution to the field of carbon
nanotubes synthesis and nanofabrication.
Supplementary Data
Chemical vapor deposition (CVD) without the oxygen annealing step, and effect of the films
initial thickness on the yield of the synthesized carbon nanotubes (PDF).
Acknowledgments
ESS acknowledges the financial support from NIMS. ESS is grateful to H. Alawadhi, K.
Daoudi, and M. Shameer, from the Center of Advanced Materials Research at the University
of Sharjah, for their support with Raman spectroscopy measurements
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7
Figure Captions
Fig. 1. Schematic diagram of the nanofabrication process: (a) Gallium focused ion beam
(FIB) decomposes TEOS precursor molecules over specific positions on a substrate, where
carbon nanotubes are intended to be located. (b) This leads to the deposition of silicon oxide
thin films pads at these locations. (c) Using chemical vapor deposition (CVD), single walled
carbon nanotubes are synthesized from silicon oxide nanoparticles that originate from the
deposited thin films.
Fig. 2. Scanning electron microscopy (SEM) images of single walled carbon nanotubes
synthesized from a 5 m × 10 m (a) and 2 m × 2 m (b) silicon oxide thin films of
thickness 10 nm. From the 2 m × 2 m film (b), only one carbon nanotube is synthesized.
Fig. 3. (a) Atomic force microscopy (AFM) topography image of a synthesized single walled
carbon nanotube. (b) The height profile along the blue line in (a) shows that the diameter of
the nanotube is about 1.7 nm. (c) Raman spectrum of a single walled carbon nanotube that
shows the G-band peak, and the expected position for the D-band peak (dotted vertical line).
(d) Raman spectrum of a single walled carbon nanotube that shows the RBM peak at 194
cm-1 (The peak at 303 cm-1 is due to the silicon substrate). (e) A Kataura plot of SWCNTs
optical energy transitions versus nanotube's diameter showing the resonance region of the
incident photons (from the laser), with a resonance window of 50 meV. The red circles and
green squares represent metallic and semiconducting SWCNTs, respectively. The metallic
SWCNT, with chirality (12,6), and diameter 1.26 nm that matches the RBM peak's position,
is the only SWCNT that satisfies these conditions.
Fig. 4. (a) Atomic force microscopy (AFM) topography image of silicon oxide nanoparticles
and a carbon nanotube after chemical vapor deposition (CVD) with a 10 nm thickness silicon
oxide thin film. (b) The height profile along the blue line in (a) shows the presence of
nanoparticles with diameters in the same range as the diameter of the synthesized carbon
nanotubes (1 to 3 nm). (c) Energy-dispersive X-ray spectroscopy (EDS) spectrum of a silicon
oxide thin film of thickness 10 nm before (Left) and after (Right) chemical vapor deposition
(CVD). The data before CVD shows peaks corresponding to Gallium and Carbon elements.
However, after CVD these peaks are absent.
8
Fig. 1.
9
Fig. 2.
10
Fig. 3.
11
Fig. 4.
12
Supplementary Data for
Lithography-free control of the position of single
walled carbon nanotubes on a substrate by focused ion
beam induced deposition of catalyst and chemical
vapor deposition
El Hadi S. Sadki, Ryo Matsumoto, Hiroyuki Takeya, and Yoshihiko Takano
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials
Science (NIMS), Tsukuba 305-0047, Japan
1- Chemical Vapor Deposition (CVD) without the Oxygen annealing step
A CVD recipe without the oxygen annealing step was also tested on the FIB deposited films. Its
details are shown in Figure S1. The samples were annealed in Argon flow from room
temperature to 900 oC, and then the standard co-flow of CH4 and H2 was introduced for 20 mins.
As mentioned in the main text, no carbon nanotubes were obtained from using this recipe.
Since the only main difference between the recipe that successfully led to SWCNTs growth (as
described in the main text) and the latter recipe is the oxygen annealing step, it is concluded that
this step is crucial for SWCNTs synthesis.
To elucidate the exact role of oxygen step in the CVD recipe, EDS analysis was conducted
before and after CVD without oxygen annealing. The results are shown in Figure S2. It is clear
from the results that carbon remains in the films after the CVD process. As we have concluded in
the main text, the presence of carbon in the films before the methane/hydrogen step prevents the
synthesis of the SWCNTs as carbon "poison" the SiOx nanoparticles, and prevent them from
absorbing carbon from methane according to the VLS mechanism.
S1
Figure S1. Chemical vapor deposition (CVD) recipe without oxygen annealing.
Figure S2. EDS spectra of a 10 nm thickness of a catalyst film before CVD (Left) and after
CVD without oxygen annealing (Right). The carbon peak is present in both spectra, and Ga peak
is absent after CVD.
2- Effect of the Films initial thickness on the yield of the synthesized carbon nanotubes
Figure S3 shows SEM images of FIB deposited films after the CVD process. With the same
CVD recipe as in the main text of the manuscript, the yield of the nanotubes depends on the
film's thickness, and increases with the film's thickness (Top image). An example is shown at
the bottom left image of a film of thickness 10 nm and area of 5 m x 5 m: Two nanotubes
were synthesized (One long and one short). However, the yield is also affected by the CVD's
recipe, as shown at bottom right image, where a film of thickness 50 nm and area of 5 m x 5
m produced only two nanotubes (One long and one short), which were synthesized with a
shortened oxygen annealing time during the CVD process.
S2
5 m
10 m
Figure S3. SEM images of FIB deposited films after CVD process. (Top) Array of eight films of
area of 10 m x 5 m and thicknesses ranging from 3 nm to 500 nm. The dotted lines show the
location of the films. The nanotubes appear as either dark or white lines due to strong charging
effects from the silicon oxide substrate. (Bottom left) A film of thickness of 10 nm and area of 5
m x 5 m: Two nanotubes were synthesized (One long and one short). (Bottom right) A film of
thickness of 50 nm and area of 5 m x 5 m: Two nanotubes (One long and one short) were
synthesized with a shortened oxygen annealing time in the CVD process.
S3
For film thickness less than 10 nm, with the CVD recipe described in the text, no nanotubes are
produced. In Figure S4, a film's thickness of 5 nm produced no carbon nanotubes (Left). For a
thickness well above that, for example a thickness of 500 nm (Right), a very high yield of carbon
nanotubes is obtained.
5 m
5 m
Figure S4. SEM images of FIB deposited films after CVD process. (Left) Initial film thickness
of 5 nm and area of 5 m x 5 m: No carbon nanotubes were synthesized. (Right) A film
thickness of 500 nm and area of 5 m x 10 m: A lot of nanotubes were synthesized.
S4
|
1803.02662 | 1 | 1803 | 2018-02-23T19:12:17 | Double inverse nanotapers for efficient light coupling to integrated photonic devices | [
"physics.app-ph",
"physics.optics"
] | Efficient light coupling into integrated photonic devices is of key importance to a wide variety of applications. "Inverse nanotapers" are widely used, in which the waveguide width is reduced to match an incident mode. Here, we demonstrate novel, "double inverse" tapers, in which we taper both the waveguide height, as well as the width. We demonstrate that in comparison to regular inverse tapers, the double inverse tapers have excellent polarization-independent coupling. In addition, the optimum coupling is achieved with much larger taper dimension, enabling the use of photolithography instead of electron beam lithography, relevant for applications at near-IR and visible wavelengths. The low coupling loss makes them particularly suitable for nonlinear photonics, e.g. supercontinuum and soliton micro-comb generation. | physics.app-ph | physics | Double inverse nanotapers for efficient light coupling to integrated photonic devices
Junqiu Liu,1, ∗ Arslan S. Raja,1, ∗ Martin H. P. Pfeiffer,1 Clemens Herkommer,1
Hairun Guo,1 Michael Zervas,1, 2 Michael Geiselmann,1, 2 and Tobias J. Kippenberg1, †
1École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
2LIGENTEC SA, CH-1015 Lausanne, Switzerland
(Dated: March 8, 2018)
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Efficient light coupling into integrated photonic devices is of key importance to a wide variety
of applications.
"Inverse nanotapers" are widely used, in which the waveguide width is reduced
to match an incident mode. Here, we demonstrate novel, "double inverse" tapers, in which we
taper both the waveguide height, as well as the width. We demonstrate that in comparison to
regular inverse tapers, the double inverse tapers have excellent polarization-independent coupling.
In addition, the optimum coupling is achieved with much larger taper dimension, enabling the use
of photolithography instead of electron beam lithography, relevant for applications at near-IR and
visible wavelengths. The low coupling loss makes them particularly suitable for nonlinear photonics,
e.g. supercontinuum and soliton micro-comb generation.
Photonic integrated circuits (PIC) allow for manipula-
tion of light on chip-scale devices and have evolved into
a mature technology ("silicon photonics"). Over the past
decades, a broad range of applications based on PIC,
passive or active, have been demonstrated such as fil-
ters [1], modulators [2] and lasers [3], that are now em-
ployed in data-centers. A second wave of interest in in-
tegrated photonic devices such as waveguides and res-
onators, has recently emerged with the advances in their
use for nonlinear frequency conversion [4, 5]. On the
one hand, the tight waveguide confinement allows signif-
icantly higher effective nonlinearity than that of optical
fibers, when combined with materials such as silicon (Si),
Si3N4 and AlGaAs that exhibit high material nonlinear-
ity. On the other hand, integrated waveguides enable
the engineering of dispersion properties [4], in particular
the anomalous group velocity dispersion (GVD), a pre-
requisite for parametric frequency conversion and soliton
formation. These advances, along with the fabrication of
low loss optical microresonators, have enabled in particu-
lar Kerr soliton frequency comb generation in integrated
optical microresonators with engineered GVD [6], as well
as broadband spectra using higher order dispersion en-
gineering via soliton induced Cherenkov radiation [7–9].
Moreover, waveguides of engineered dispersion have en-
abled supercontinuum generation at low pulse energies,
i.e. octave spanning combs with pJ pulse energy [10].
These advances signal the potential of integrated nonlin-
ear photonic devices, that have applications such as low
noise microwave [11], coherent communication [12], spec-
troscopy [13, 14], astronomical spectrometer [15, 16] and
LIDAR [17, 18].
Central to nonlinear photonic applications is the abil-
ity to couple light to photonic chip devices with low loss
over a broad optical bandwidth. Widely employed grat-
ing couplers [19] are not well suited for this purpose due
∗ J.L. and A.S.R contributed equally to this work
† [email protected]
to their restricted bandwidth. In contrast, inverse nano-
tapers [20], possessing simultaneously high coupling effi-
ciency, broad operation bandwidth and the use of stan-
dard CMOS-compatible fabrication process, are widely
used in PIC based chip devices and particularly well
suited for nonlinear integrated photonics. An inverse
taper works as a mode transformer which adiabatically
transforms an incident fiber or free-space optical mode (of
several micron mode diameter) to a waveguide mode (of
sub-micron mode diameter). The taper mode at the de-
vice facet matches the incident fiber or free-space mode,
due to the small taper waveguide size and thus the strong
evanescent field.
In this Letter, we present novel, double inverse ta-
pers ("2D-tapers") for efficient light coupling from lensed
fibers to Si3N4 waveguides. In comparison with the reg-
ular inverse tapers ("1D-tapers") which have only the re-
duced waveguide width to match the incident mode (as
shown in Fig. 1(a)), 2D-tapers have both the reduced
waveguide height as well as the width (as shown in Fig.
2(b)). First, we present the simulation of light coupling
from a lensed fiber to Si3N4 bus waveguides via 1D-
tapers, using 3D finite-difference time-domain (FDTD)
simulation. We fabricate 1D-tapers of 820 nm height but
different widths, experimentally characterize their cou-
pling efficiencies at 1550 nm wavelength, and demon-
strate that >45% coupling efficiency for the transverse
electric (TE) polarization can only be achieved in a ta-
per of 80 nm width. Such small feature can only be
achieved with electron beam lithography (EBL). We also
reveal that the coupling efficiency for the transverse mag-
netic (TM) polarization is lower than the TE polariza-
tion due to the taper's large height-to-width aspect ratio
(HWAR). To relax the stringent lithography requirement
to fabricate tapers of 80 nm width and to further im-
prove the coupling for the TM polarization, we fabricate
2D-tapers using the novel photonic Damascene process
[21]. Due to the inherent aspect-ratio-dependent etch
(ARDE), the 2D-tapers have increasing height over ta-
per length, therefore enabling further reduction of the
2
FIG. 1. Schematic, simulation and characterization of the regular 1D inverse tapers. (a) Schematic of a 1D inverse taper of
increasing width and constant height over the taper length. Inset: SEM image of the taper cross-section (Si3N4 is blue shaded),
80 nm in width and 820 nm in height, at the chip facet, buried in SiO2 cladding. The taper width is defined as the trapezoid's
top side width. (b) Simulated coupling efficiency (including two chip facets) versus different taper widths for both the TE and
TM polarizations (green), in comparison with the experimentally measured data (red). Blue shaded data points are studied
with more details in (d), (e). (c) Simulated mode profiles of the incident Gaussian mode, 0.1-µm-width taper's TE and TM
modes, and 2-µm-width bus waveguide's TE and TM fundamental modes, to illustrate the taper's working mechanism as a
mode transformer, to bridge the incident Gaussian mode and the bus waveguide mode. neff: effective refractive index. (d)
Simulated mode coupling profile in the case of ∼80% coupling efficiency marked in (b). (e) Characterized coupling efficiency
from 1500 to 1630 nm, of the taper marked in (b). Two Fabry-Perot interference patterns are observed. The ∼15 GHz one is
due to the reflection between two chip facets (5 mm cavity length), and the ∼50 MHz one is likely due to the reflection between
the input chip facet and the laser (2 m cavity length).
taper size. We demonstrate >45% coupling efficiency at
1550 nm wavelength, for both the TE and TM polariza-
tions in 2D-tapers of >300 nm width, which can be easily
achieved with deep-UV lithography, significantly relaxing
the lithography requirement. Furthermore, by comparing
the coupling performance of several groups of 2D-tapers,
we demonstrate the flexibility to engineer the 2D-taper's
shape, enabling >45% coupling efficiency with ∼500 nm
taper width. Therefore these 2D-tapers are promising for
light coupling at short wavelength range e.g. 1064 nm or
780 nm, which is usually challenging as EBL is required
to pattern very small taper size for optimized coupling.
fully
buried in SiO2 cladding, as shown in Fig. 1(a). The
1D-tapers are fabricated using a subtractive process [22],
a standard CMOS-compatible fabrication process widely
used for integrated photonic devices. In our process, pat-
terns e.g. tapers and bus waveguides, are defined by EBL
and transferred to Si3N4 film via dry etching (CHF3/O2).
All the patterns, including tapers and bus waveguides,
have the uniform height as the Si3N4 film thickness. As
shown in Fig. 1(a), tapers fabricated using this process
have increasing width but constant height over the taper
length.
We experimentally study Si3N4 waveguides
We simulate the light coupling from a lensed fiber to
Si3N4 bus waveguides via 1D-tapers of different taper
widths at a chip facet, using FDTD method. Due to the
Si3N4 dry etching process, the 1D-tapers as well as the
bus waveguides have a sidewall bottom angle of ∼80o. In
this Letter, the "taper width" is defined as the top side
width of the taper's trapezoidal cross-section (see Fig.
1(a) inset), which is defined by EBL. Other taper param-
eters used in the simulation are shown in Fig. 1(c), (d).
We use a free-space Gaussian mode of 2.5 µm waist diam-
eter to represent the incident mode from the lensed fiber,
according to the lensed fiber's specification. The normal-
ized transmitted power through the bus waveguide, i.e.
coupling efficiency per chip facet T1, can be calculated in
the simulation. Thus the full device coupling efficiency
including two facets is defined as T2 = T 2
1 .
We simulate T2 at the wavelength 1550 nm, for both
the TE and TM polarizations of the incident Gaussian
mode. The simulated T2 as function of taper width from
50 to 300 nm is shown in Fig. 1(b), together with the
experimentally measured data which, will be discussed
later.
The simulation results present two prominent trends:
First, a smaller taper has better coupling, due to the
weaker light confinement (lower effective refractive index)
which improves the mode match to the incident Gaus-
sian mode. Second, the TE mode has better coupling
than the TM mode. As shown in Fig. 1(c), due to the
taper's high height-to-width aspect ratio (HWAR), the
TE mode has a larger size than the TM mode, leading
to a better match to the incident Gaussian mode. Fig.
1(d) show the simulated mode propagation profile of the
case of ∼80% coupling efficiency, illustrating that a small
taper providing improved mode match can well guide the
-505LowHigh0100200300x (μm)y (μm) BusW.= 2 μmTaper length = 300 μmTaper width = 0.05 μm, Height = 0.8 μm(c) Bus waveguideTE, neff=1.84TM, neff=1.80TaperTE, neff=1.47TM, neff=1.50(b) Gaussian2.5 μm radiusHeightTaper widthBus waveguide Taper HeightTaper lengthCoupl. efficiency00.20.40.60.81Taper width (μm)0.050.10.150.20.250.315001630Uncalibrated wavelength (nm)Coupl. efficiency00.10.20.30.40.5(e) (d) (a) TE-simu.TM-simu.TE-meas.TM-meas.1(d) 1(e) ~50 MHz~15 GHz200 nm 3
FIG. 2. Schematic and the characterization of the novel 2D double inverse tapers. (a) SEM image of the ARDE effect on a SiO2
substrate with Si etch mask (green shaded). (b) Schematic of the 2D-taper. SEM images of the taper cross-sections (Si3N4
is blue shaded) at the taper beginning (chip facet side), middle, and end (bus waveguide side) are shown. (c) Characterized
ARDE effect. SiO2 is etched for 3 mins with a 400 nm Si etch mask. The blue circles are measured data via SEM and the red
curve is the ARDE fit curve. CD: critical dimension of the trench width. ER: etch rate. (d) Measured height-to-width aspect
ratios (HWAR) of 2D-tapers. A, B, C stand for 2D-taper chips 2D-A (red), 2D-B (blue) and 2D-C (green). (e) Measured
coupling efficiency at 1550 nm wavelength (through two chip facets) of 2D-taper Chips A (red), B (blue), C (green), for both
the TE (dash) and TM (solid) polarizations. By controlling the ARDE effect, the taper width at the optimum coupling can
be shifted. Optimum coupling with >500 nm taper width can be achieved, enabling the use of normal UV lithography for the
taper fabrication.
incident Gaussian mode to the bus waveguide.
We fabricate a large number of 1D-taper chips of ∼820
nm bus waveguide height (as the Si3N4 film thickness),
and experimentally characterize their coupling efficien-
cies at 1550 nm wavelength, using a setup similar to the
one described in Ref.
[8]. The measured coupling effi-
ciency of each sample, plotted in Fig. 1(b), agrees well
with the simulated results, supporting the two aforemen-
tioned claims: A smaller taper has better coupling, and
the TE mode has better coupling than the TM mode.
The deviation between the measured data and the simu-
lated results is likely due to the fact that the lensed fiber
we use has non-unity transmission. We also characterize
the coupling from 1500 to 1630 nm bandwidth, using a
tunable laser. A weak trend of decreasing coupling effi-
ciency with increasing wavelength is observed, as shown
in Fig. 1(e). However this trend is more likely caused by
the broadband response of e.g. the 50-50 fiber couplers
used in the setup rather than the taper itself, as the oppo-
site trend, increasing coupling efficiency with increasing
wavelength, is observed when the 50-50 fiber coupler's
two output branches are interchanged. Nevertheless, the
coupling efficiency remains >30% over the 130 nm range.
As mentioned above, 1D-tapers show polarization-
dependent coupling, i.e. the TM polarization has lower
coupling efficiency than the TE polarization, due to the
1D-taper's large HWAR. However, many photonic de-
vices are specifically operated with TM mode, to couple
vertically between different components, such as the cou-
pling between photonic dielectric and plasmonic waveg-
uides [23, 24]. Therefore for these devices, efficient TM
coupling is important and needs to be optimized.
Further improving the TM coupling requires reducing
the taper size. However reducing the taper width further
is challenging due to the lithography resolution and qual-
ity. In addition, thin but tall tapers of high HWAR tend
to collapse which reduces fabrication yield. Therefore,
reducing the taper height is a feasible solution, however
simultaneously the height of other components, e.g. bus
waveguides, should remain unchanged in order to operate
the device in the same situation. As a result, tapers of
both increasing width and height, manifesting as "double
inverse tapers" or "2D-tapers", are desired.
In the subtractive process all the patterns have the
uniform height determined by the Si3N4 film thickness,
thus 2D-tapers can not be achieved. Therefore, we use
the photonic Damascene proess [21]. In this process, the
patterns are defined by lithography and then transferred
to a SiO2 substrate via dry etching. The Si3N4 film is
then deposited on the SiO2 substrate and fill the defined
pattern trenches, followed by a chemical mechanical pla-
narization (CMP) which removes the excess Si3N4 and
planarizes the wafer top surface. As the dry etching pro-
cess has inherently aspect-ratio-dependent etch (ARDE)
1 μm012300.10.20.3ER (μm / min) 0.10.30.50.70.9Width (μm)0.10.30.50.70.9Height (μm) ABC1:1dataFitA, TEA, TMB, TEB, TMC, TEC, TM0.10.30.9Width (μm)00.10.20.30.40.5Coupl. efficiency0.70.5CD (μm)BeginningMiddleEnd(b) (a) (c) (d) (e) 1 μm TABLE I. 2D-taper chips' specifications.
Chips
1D 2D-A 2D-B 2D-C
∼400 ∼400 ∼750
Bus waveguide height (nm) ∼820 ∼820 ∼650 ∼670
Mask thickness (nm)
rate [25], the pattern trench depth increases with in-
creasing pattern size. For pattern sizes exceeding a cer-
tain threshold value, the ARDE effect becomes negligible,
thus the trench depths can be considered as uniform. As
a consequence, a taper of increasing width has increasing
height, manifesting a 2D-taper. Other components, e.g.
bus waveguides, have uniform height on the wafer.
Fig. 2(a) shows the ARDE effect on a SiO2 substrate,
after SiO2 dry etching process (C4F8/He) with a 400 nm
amorphous Si etch mask. The ARDE effect creates non-
uniform, pattern-dependent trench depths, and is charac-
terized by measuring the mean etch rate (ER) as function
of trench width (critical dimension, CD), as shown in Fig.
2(c). When CD reaches the threshold value of ∼1 µm,
the ER reaches a stable value of ∼0.29 µm/min and be-
comes nearly independent of CD. From 0 to 0.5 µm CD,
ER increases nearly linearly. The ARDE curve can be
fitted with ER = a · exp(−CD/b) + c, with a = −0.444
µm/min, b = 0.195 µm, c = 0.286 µm/min. Fig. 2(b)
shows the measured SEM images of taper cross-sections
at taper beginning (chip facet side), middle, and end (bus
waveguide side), revealing the double inverse shape with
increasing width and height of the waveguide.
Three groups of 2D-taper chips (Chips 2D-A, B, C)
were fabricated and their specifications are shown in Tab.
I, in comparison with the 1D-taper chip. These tapers'
HWARs and coupling efficiencies for both the TE and
TM polarizations are experimentally characterized, as
shown in Fig. 2(d) and (e). Again, the taper width
is defined as the taper's top side width. Compared with
the 1D-taper chip shown in Fig.1(b), Chip 2D-A achieves
>45% TM coupling, while >45% TE coupling is main-
tained. Different from the 1D-tapers in which the smaller
taper width shows better coupling, in Chip 2D-A, there is
an optimum coupling point which is achieved with >300
nm taper width, due to the ARDE and the reverse trape-
zoidal shape (bottom angle 96o). This optimum cou-
pling requires weak waveguide confinement for large ta-
per mode of improved mode match, but simultaneously
the waveguide confinement needs to be sufficient to over-
come the Gaussian beam's divergence. Such >300 nm
taper width of optimum coupling can be easily achieved
with deep-UV lithography instead of EBL, significantly
relaxing the stringent requirement of lithography reso-
lution. Moreover, optimized coupling for shorter wave-
lengths, e.g. 1064 nm and 780 nm, requires very small
tapers, which is challenging to fabricate with 1D-tapers
due to the waveguide height. Therefore 2D-tapers are
more useful to work in these wavelengths.
The ARDE and the taper shape can be engineered sim-
ply by changing the etch mask thickness. A thicker etch
4
mask gives a stronger ARDE effect. To demonstrate this
scheme, 2D-taper Chips, 2D-B and 2D-C, are fabricated.
Chip 2D-C is fabricated with a 750 nm deep-UV photore-
sist etch mask, leading to a stronger ARDE. Chip 2D-B
is fabricated with a 400 nm amorphous Si etch mask,
same process as Chip 2D-A but the bus waveguide height
is made to 650 nm via more CMP time, in order to di-
rectly compare to Chip 2D-C. Both chips have nearly the
same bus waveguide height (660±10 nm), but their taper
HWARs are significantly different due to their different
ARDEs, as shown in Fig. 2(d). As shown in Fig. 2(e),
compared with Chip 2D-A, the coupling of Chip 2D-B is
not prominently different, because, as long as the taper's
HWAR exceeds unity (>1), the mode size is more con-
strained by the taper width rather than the taper height.
However, the stronger ARDE (HWAR <1) of Chip 2D-
C shifts the optimum coupling to taper width >500 nm.
In this case the required lithography precision is further
reduced, enabling the use of common UV lithography.
In summary, we present the characterization of inverse
(1D-) and double inverse (2D-) tapers for efficient light
coupling from a lensed fiber to Si3N4 waveguides. We
experimentally compare the coupling performance of 1D-
and 2D-tapers, and illustrate the main mechanisms in the
fabrication processes which lead to the performance dif-
ference. We demonstrate the advantages of 2D-tapers,
including: First, better coupling of the TM polariza-
tion. Second, larger taper width at optimum coupling,
enabling the use of UV or deep-UV photolithography
instead of EBL. Third, flexibility to change the taper
shapes via engineering the ARDE effect. The data pre-
sented in this Letter is from several chip devices, but is
highly reproduceable in many other chips that we have
experimentally characterized. Our results demonstrate
the advantages of 2D-tapers over 1D-tapers, particularly
promising for light coupling at near-IR or visible wave-
lengths.
Funding Information
Defense Advanced Research Projects Agency
(DARPA), Defense Sciences Office (DSO) (HR0011-15-
C-0055); European Union's Horizon 2020 Framework
Programme (H2020) (709249); Swiss National Science
Foundation (SNSF) (161573).
Acknowledgements
We thank Tiago Morias in assisting the sample fab-
rication. The Si3N4 optical waveguide samples were
fabricated in the EPFL center of MicroNanoTechnology
(CMi).
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|
1704.08629 | 1 | 1704 | 2017-04-26T07:42:15 | Negative Differential Resistance, Memory and Reconfigurable Logic Functions based on Monolayer Devices derived from Gold Nanoparticles Functionalized with Electro-polymerizable Thiophene-EDOT Units | [
"physics.app-ph",
"cond-mat.mes-hall"
] | We report on hybrid memristive devices made of a network of gold nanoparticles (10 nm diameter) functionalized by tailored 3,4(ethylenedioxy)thiophene (TEDOT) molecules, deposited between two planar electrodes with nanometer and micrometer gaps (100 nm to 10 um apart), and electropolymerized in situ to form a monolayer film of conjugated polymer with embedded gold nanoparticles (AuNPs). Electrical properties of these films exhibit two interesting behaviors: (i) a NDR (negative differential resistance) behavior with a peak/valley ratio up to 17, and (ii) a memory behavior with an ON/OFF current ratio of about 1E3 to 1E4. A careful study of the switching dynamics and programming voltage window is conducted demonstrating a non-volatile memory. The data retention of the ON and OFF states is stable (tested up to 24h), well controlled by the voltage and preserved when repeating the switching cycles (800 in this study). We demonstrate reconfigurable Boolean functions in multiterminal connected NP molecule devices. | physics.app-ph | physics | Negative Differential Resistance, Memory and
Reconfigurable Logic Functions based on
Monolayer Devices derived from Gold
Nanoparticles Functionalized with Electro-
polymerizable Thiophene-EDOT Units
T. Zhang1, D. Guérin1, F. Alibart1, D. Vuillaume1, K. Lmimouni1, S. Lenfant1*
A. Yassin2, M. Oçafrain2, P. Blanchard2, J. Roncali2
1 Institute of Electronics Microelectronics and Nanotechnology (IEMN), CNRS, University of
Lille, Avenue Poincaré, 59652 Villeneuve d'Ascq, France
2 MOLTECH-Anjou, CNRS, University of Angers, 2 Bd. Lavoisier, Angers, 49045, France
ABSTRACT: We report on hybrid memristive devices made of a network of gold nanoparticles
(10 nm diameter) functionalized by tailored 3,4-(ethylenedioxy)thiophene (TEDOT) molecules,
deposited between two planar electrodes with nanometer and micrometer gaps (100 nm to 10 μm
apart), and electro-polymerized in situ to form a monolayer film of conjugated polymer with
embedded gold nanoparticles (AuNPs). Electrical properties of these films exhibit two interesting
1
behaviors: (i) a NDR (negative differential resistance) behavior with a peak/valley ratio up to 17;
and (ii) a memory behavior with an ON/OFF current ratio of about 103 to 104. A careful study of
the switching dynamics and programming voltage window is conducted demonstrating a non-
volatile memory. The data retention of the "ON" and "OFF" states is stable (tested up to 24h), well
controlled by the voltage and preserved when repeating the switching cycles (800 in this study).
We demonstrate reconfigurable Boolean functions in multi-terminal connected NP/molecule
devices.
INTRODUCTION: Resistive organic memories have emerged as promising candidates for
hardware implementation of circuitries in organic electronics. Several groups have demonstrated
the resistive switching of hybrid organic- metallic nanoparticles materials, and many materials
(organic, inorganic, and composite) have been used to demonstrate resistive switching.1 Organic
devices have the advantages of low fabrication cost, simple process, low weight, tunable material
and high mechanical flexibility, and are quite promising for the research of the next generation
RRAMs devices with a high density, multilevel storage and high flexibility. In organic electronics,
the first was introduced by Ma et al. in 20022, where an aluminum ultra-thin layer was evaporated
between two organic layers leading to the formation of nanoparticles into the organic material (2-
amino-4,5-imidazoledicarbonitrile). These devices show reproducible switching with high
ON/OFF current ratio of about 104 and operation speed at the nanosecond.2 Since this pioneering
demonstration, many hybrid organic / metallic nanoparticles materials have been used to
demonstrate resistive switching: polyaniline with gold nanoparticles3, poly(3-hexylthiophene)
(P3HT) with gold nanoparticles4, Alq3 and various other small molecules with Au and Al
nanoparticles5, poly(N-vinylcarbazole) with silver sulfide nanoparticles6 or with Au
nanoparticles7, polystyrene blended with Au nanoparticles capped with conjugated 2-
2
naphthalenethiol8 or with 1-dodecanethiol9, a perylene derivative with Au nanoparticles10,
pentacene films with embedded Au nanoparticles11;12. Some of these previous reports claimed, in
addition to resistive switching, the observation of a Negative Differential Resistance (NDR) in the
device.3;5;6 However in these previous works, devices have a vertical sandwich structure consisting
in a metal/switching layer/metal stack where the hybrid material is localized between top and
bottom electrodes. In these devices two approaches were used to form the hybrid material: (i) by
mixing the organic material with the nanoparticles in solution and depositing the blend by spin-
coating on the surface; or (ii) by evaporation of an ultra-thin metallic layer (usually 5 nm) onto the
organic layer in order to form metal clusters or nanoparticles13.
Furthermore, resistive memories and their extension to memristive systems have opened new
routes toward innovative computing solutions such as logic-in-memory (implication logic with
memristor)14, analog computing (threshold logic with memristor15) or neuromorphic computing16.
Nevertheless, to become attractive, these different approaches require a massive integration of
memory elements. If crossbar integration consisting in vertical devices interconnected between
metallic lines and columns has been considered as an interesting solutions, its practical realization
with standard lithographic technics (i.e. top-down approaches) is facing severe limitations such as
wire resistance contribution, crosstalk of memory elements during programming and sneak path
during reading. One relatively unexplored solution is to rely on bottom-up approaches based on
randomly assembly elements, in which memory functionalities are configured post-fabrication.
This idea was initially proposed with the concept of nanocell17;18;19 but remains in its early steps
of development from a practical viewpoint and would benefit from functional and reliable
hardware for its implementation.
3
Here, we report on a hybrid organic/gold nanoparticle memory with several advances compared
to the devices demonstrated until now: (i) a nanoscale –monolayer thick- planar structure: the
hybrid organic/gold nanoparticle material is placed between two coplanar electrodes with
characteristic distance smaller than 100 nm; (ii) a bottom-up approach for material synthesis,
device fabrication and operation: redox ligands were electro-polymerized in situ (i.e. into the
device) to form a monolayer of a conjugated polymer with embedded Au nanoparticles and the
memory functionality is defined post-fabrication to implement multi-terminals reconfigurable
logic devices. This planar structure presents the main advantage, compare to vertical structure, to
study the monolayer modifications during the voltage operations in order to understand the
physical mechanisms involved during these operations. Also, this planar structure opens the way
to multi-planar electrodes for connecting nanocell devices.
METHODS
Electrode fabrication. Devices were processed using a standard electron beam lithography
process. We used highly-doped n+-type silicon (resistivity 1-3 mΩ.cm) covered with a thermally
grown 200 nm thick silicon dioxide (135 min at 1100°C in presence of oxygen 2L/min followed
by a post-oxidation annealing at 900°C in N2 2L/min). The planar electrodes were patterned by
electronic lithography with help of 10% MAA 17.5% / PMMA 3% 495K bilayer resists (with
thicknesses of 510 nm and 85 nm respectively). Titanium/Platinum, (5/50 nm) were deposited by
vacuum evaporation and lift-off. We fabricated electrodes with channel lengths L = 100 nm to 10
µm and channel width W = 100 nm to 1000 µm.
Electrochemical experiments were performed with a Modulab potentiostat from Solartron
Analytical. The substrate with lithographed electrodes was hermetically fixed at the bottom of a
0.2 mL Teflon cell (see the setup photo in Supporting Information) containing the electrolyte
4
solution. The counter electrode was a platinum wire (0.5 mm in diameter) and Ag/AgCl was used
as a reference electrode.
Electrical measurement setup. For the Pt//PTEDOT-AuNPs//Pt switch test, electrical
measurement were performed with an Agilent 4156C parameter analyzer in DC sweeping mode.
We used Carl Süss PM5 probe station in order to connect Agilent 4156C and devices. For the pulse
test, two programming and read pulses of square shape with different amplitude and width were
applied to the device using the B1530A pulse generator module which is embedded in Agilent
B1500A. All the electrical measurements were performed under ambient nitrogen in glove box
filled with clean nitrogen (O2 < 1 ppm, H2O < 1 ppm).
Device fabrication. TEDOT-capped AuNPs. The first step consists of the synthesis of 10 nm
TEDOT-capped AuNPs. The synthesis of the ligand TEDOT-SH, consisting of a decylthiol chain
terminated by a thienyl EDOT (TEDOT) end group was previously described20. The synthesis of
10 nm TEDOT-AuNPs (Fig. 1) involved a ligand exchange by treating 10 nm oleylamine-capped
AuNPs21 in the presence of TEDOT-SH. It was previously shown that oleylamine ligands are
easily substituted by thiols22;23;24 (see Supporting Information).
The ligand substitution is evidenced by UV-visible spectroscopy in 1,1,2,2-tetrachloroethane TCE
solution (Supporting Information - Figure SI-2). The gold Surface Plasmon Resonance (SPR) of
TEDOT-AuNPs is observed at 527 nm, while the absorption band corresponding to the TEDOT
ligands is detected in the 315 - 353 nm region in agreement with previous results on the analogous
2-3 nm TEDOT-AuNPs directly synthesized with the ligand grafted on the Au NP by the Brust-
Schiffrin method20.
TEDOT-AuNPs monolayer deposition. In the second step, we formed the TEDOT-AuNPs
monolayer on the device. For this, Langmuir films of TEDOT-AuNPs were prepared following
5
the method of Santhanam25 by evaporating a solution of functionalized NPs in TCE on the convex
meniscus of a DI (deionized) water surface in a teflon petri dish (see details in Supporting
Information, Figure SI-3). The transfer of the floating film on the substrate with lithographed
electrodes was realized by dip coating. The TEDOT-AuNPs form a rather well organized
monolayer on the surface (also called NPSAN: Nanoparticle Self-Assembled Network) as shown
by scanning electron microscopy (SEM image, Fig. 2a). The statistical SEM image analysis gives
an average diameter of the TEDOT-AuNPs of 9.3 nm, and an average spacing of 2.5 - 3.0 nm
between the NPs in the network (see Supporting Information, Figure SI-4). Given the theoretical
length of the free ligand (2.1 nm) obtained by a MOPAC simulation (ChemOffice Software) with
respect to the average spacing measured between the NPs (2.5 to 3 nm), one can assume that the
ligand molecules are interdigitated (Fig. 2b).
X-ray Photoelectron Spectroscopy (XPS) of the deposited TEDOT-AuNPs monolayer on large
surface silicon without electrodes, shows the chemical composition of TEDOT adsorbates before
electro-polymerization (results and spectra of XPS are presented in the Supporting Information-
Figure SI-5). The good agreement between the theoretical and measured atomic ratios (see
supporting information, table SI-1) demonstrates the successful grafting of TEDOT-SH on AuNPs.
No signal is detected in the N1s region proving the complete substitution of oleylamine ligands by
TEDOT-SH. Following the method of Volkert26, we evaluate a ligand density of 4.0
molecules/nm2 from the experimental S/Au ratio (0.407) of atomic concentrations.
TEDOT-AuNPs monolayer electro-polymerization. The third and last step for the device
fabrication is the in-situ electro-polymerization of the TEDOT-AuNPs monolayer (last step in Fig
1). The monolayer of TEDOT-AuNPs deposited on and between Pt electrodes (see Fig. 2a) was
electro-polymerized in situ, using the lithographed electrodes as working electrodes (see Materials
6
and Methods) to form a monolayer film of conjugated polymer with embedded AuNPs, PTEDOT-
AuNPs (see general principle in Fig. 3a). This polymerization of the monolayer was realized in
potentiodynamic mode (electrolyte: 0.1M NBu4PF6 in CH2Cl2 or CH3CN) by multiple scans at 100
mV/s between -0.4 V and +1 V. It leads to the development of a broad oxidation peak centered at
+0.7 V vs Ag/AgCl which stabilized after multiple scans suggesting that most of the redox active
TEDOT units have been coupled (Figure 3b). This behavior is clearly associated to the electro-
polymerization of the PTEDOT polymer in the device.20. Then, the polymer was thoroughly rinsed
with pure CH3CN.
RESULTS AND DISCUSSION
Forming process. After the deposition and the in situ electro-polymerization, the PTEDOT is in
its not conducting reduced form, as evidenced by the low current (70 nA at 5 V) measured for the
current voltage (I-V) characteristic (Fig. 4). However, the current is higher than the one measured
for the same device before in-situ electro-polymerization (around 1 nA at 5 V), because, in this
former case, charge carriers have to tunnel between neighboring NPs though the TEDOT ligands.
A "forming process" is used to switch the PTEDOT-AuNPs monolayer in a more conducting state.
For that, voltage sweeps in the range 0 V and 40 V (depending on the electrode spacing) at a sweep
rate of around 4 V/s (we did not observed dependence of the sweep rate on the forming process),
were rapidly applied, back and forth, on the device (Fig. 4). At the beginning, for the sweep voltage
between 0 and 10 V (or a lateral electric field of 0.5 MV/cm, for a device length of 200 nm in that
case) the forward and reverse curves were superimposed with a low noise (I-V curve labeled
"unformed" in Fig. 4). Progressively, with the increase of the number of voltage sweeps and the
increase of the maximum voltage (up to 20 V or 1 MV/cm), the I-V curves become more and more
7
noisy. Finally, after several sweeps (three in the Fig. 4, and generally between 1 and 4), the current
increases sharply at a voltage of about 6 – 7 V (curve labeled "formed" in Fig. 4), indicating the
transition from a low conductivity to a higher conductivity state (the ON state). An instability
region (at 6-7 V) systematically precedes this sharp increase with an important fluctuation on the
measured current, and this voltage is independent of the electrode distance. This last point suggests
the fact that the conduction is due to the formation of conducting paths between the electrodes
after the forming process. The physical characterization by various technics of these conducting
paths will be described in more details elsewhere27. In the "unformed" state the current is around
3.3 nA and 87 nA at 1 V and 5 V respectively. After forming, the device is in the ON state with
currents at around 52 nA and 4.1 µA at 1 V and 5 V respectively, giving ratios of conductance of
more than 2 orders of magnitude for the device shown in Fig. 4.
NDR effect in the Formed-PTEDOT-AuNPs film. After the electroforming process, the film is
called Formed-PTEDOT-AuNPs thereafter, and the device remains in this ON state even after
turning off the voltage power. Fig. 5 shows the I-V measured just after the forming process. The
forward and backward current curves in the ON state are very close with high current values
(around 10-4 A at 5 V).
Furthermore, the I-V characteristic after the electroforming process exhibits an interesting
behavior: a NDR (negative differential resistance) with a maximum peak/valley ratio up to 17.
This behavior is systematically and repeatedly observed for the different device geometries with a
NDR peak in the range 5 - 7 V. For negative voltages, the I-V characteristics are identical with the
presence of a NDR peak between -5 V and -7 V (see the Supporting Information – Figure SI-7).
Control of the ON-to-OFF and OFF-to-ON switches in the Formed-PTEDOT-AuNPs film.
As shown above, the device switches to the ON state during the forming process and remains
8
stable in the ON state during a voltage sweep. One of the most important features of the devices is
that an OFF state, with a current lower than in the unformed state, can be obtained if the voltage
is very rapidly (<0.1s) returned to 0 V (Fig. 6). Fig 6 shows the I-Vs for a sequence of voltage
sweeps as follow starting in the ON state : (1) 0 to 20 V at approximately 4 V/s, (2) 20 V to 0 V
abruptly (< 0.1 s), (3) 0 to 20 V at approximately 4 V/s and (4) 20 V to 0 V at approximately 4
V/s. In the ON state and at low voltage sweep rates (curves 1 and 4) the device shows the NDR
effect (also Fig. 5). During the abrupt sweep back to 0 V (trace 2, the current is not shown because
it is not measurable during this abrupt event) the device switches in an OFF state as shown by the
low current measured during the subsequent voltage sweep (trace 3 in Fig. 6) until a voltage of
about 6 – 7 V where the current increases to recover the "valley" current of the NDR as measured
during the voltage sweep (1). From these I-V curves, we can define two voltage domains: below
6-7 V for a memory effect with ON/OFF ratio in the range 103-104 (see details in next section
"Dynamic") and the NDR effect for the "ON" state at voltages > 6-7 V with a pic/valley ratio up
to 17 (between 3 and 17 in for the devices measured in this work). The details of the dynamics of
the ON/OFF switching is described and discussed in next section "Dynamic".
Dynamic measurements in the Formed-PTEDOT-AuNPs film. To determine the voltage
amplitude and pulse width required to switch the device between the ON and OFF states, we
designed the following experiments (Fig. 7a). For the ON to OFF switching (called RESET), the
device is initially sets on the ON state by applying a double sweeping voltage (amplitude 15 V at
4 V/s) and the ON current ION is measured by a small "reading" pulse (1 V and 50 ms). Then a
writing pulse with voltage Vpulse and duration t was applied, again followed by a reading pulse to
measure the current (Fig. 7a). The current ratio Ion/Ipulse is a measurement of the ON-to-OFF ratio.
These measurements were done for Vpulse between 0 V and 16 V and t from 1 s to 1 s. The 3D
9
plot in Fig. 7a shows that Vpulse ≳ 8 V is required to switch OFF the device device (i.e. ION/Ipulse >
1) and that a ON/OFF ratio of 103-104 is obtained for voltage larger than about 10-12 V. This
behavior is independent of t, or, in other words, it means that the switching time is lower than 1
µs. The transition from ON to OFF is voltage driven. On the contrary, the OFF-to-ON process
(also called SET) is sensitive to both pulse amplitude and width (Fig. 7b). The same experiment
was performed setting the device in the OFF state by applying a voltage sweep (15 V at 4 V/s)
followed by an abrupt return to 0 V (as described previously in Fig. 6). In that case the current
ratio Ipulse/Ioff measures the amplitude of the OFF-to-ON switching. Only pulses applied in a
specific range: 5 V ≲ Vpulse ≲ 8 V and with a pulse width Δte ≳ 1 ms, allow to switch ON the device.
Data retention and endurance tests. Endurance test was made to get further information on
switching stability. Here, a "read" pulse (1 V during 50 ms) is added after each SET / RESET steps
in order to achieve 'write-read-erase-read cycles' (Fig. 8a). According to results presented in Fig.
7, the switch from ON to OFF state is realized by appli a short (1 ms) voltage pulse of 12 V and
the OFF to ON transition is induced by a medium voltage level of 6.5 V during 30 ms and a return
to 0 V in 30 s (Fig 8a). As shown in figure 8a, these cycles are repeated for more than 800 cycles
and display a current ratio Ion/Ioff of about 103 without significant degradation. Data retention test
shows the capability of the device to retain the data in the two resistance states. The device is
switched to the ON or OFF states using the same voltage sequences as for the switching test (see
Fig. 6), then we applied 105 reading pulses at 1V (every 10 s) to measure the ON or OFF currents,
respectively (Fig. 8b). The results (Fig. 8b) show a good data retention without significant current
drift, revealing a non-volatile memory function of the device.
10
NDR and memory mechanisms. The NDR and memory behaviors observed here are similar as
those described by Bozano et al.28, in organic memory devices which were explained by the
presence of metallic clusters in the organic films. Based on a review of literature results29 and their
own works, these authors established several criteria to describe this bistability in the device : (i)
In the ON state, a "n" shaped I-V curve is observed with a maximum current at Vmax followed by
a NDR effect (e.g. Vmax ∼ 7 V in Fig. 6b); (ii) The OFF state is obtained by rapidly returning the
voltage to 0V; (iii) The device remains in the OFF state until a threshold voltage Vth is reached
(e.g. Vth ∼ 6 V in Fig. 6b). Beyond Vth the ON state is established; (iv) This threshold voltage is
comparable to, but slightly less than Vmax; (v) The ON state is obtained by setting the voltage
above Vth, then reducing it to zero; (vi) Intermediate states, i.e., those between the ON and OFF
resistance values, can be obtained by setting the voltage in the NDR region; (vii) Switching and
reading are achieved with a single sign of applied voltage. All of these criteria established by
Bozano et al. and observed by several authors (see for review29 and2-13) are related to vertical
macroscopic devices. Here, we demonstrate similar NDR and memory behaviors at a single
monolayer level and for devices with nano-scale lateral dimensions.
The proposed physical mechanism is essentially the same as described by Simmons and Verderber
on electroformed metal-insulator-metal diodes in the 1960s30, involving charge trapping and space
charge field inhibition of injection. Here, a model of charge trapping by NPs can also be proposed
to explain this resistive switching behavior, considering the NPs as charge traps in the PTEDOT
film. The transition speed between the ON and OFF states depends on how fast the charge carrier
trapping by AuNPs takes place. Dynamics experiments (Fig. 7a) tell us that the trapping occurs
with a characteristic time τC faster than 1 μs and requires a voltage larger than 8 V. These features
are compatible with a field-assisted trapping mechanism characterized by a capture cross-section
11
σC larger than (vppτC)-1, with vp the thermal velocity of charge carriers (holes here), p the hole
density and τC = 1μs. The OFF to ON transition corresponds to charge carrier emission by the NPs.
Data in Fig. 7b shows an emission time τE > 1 ms and that the applied voltage should be between
5 and 8 V. The emission time τE > 1 ms implies that the energy level associated to the NP trap is
located in the PTEDOT band gap, above the valence band, at an energy ET>kTLn(τE/σpvpNV) with
NV the density of states in the valence band, k the Boltzmann constant, and T the temperature. The
voltage dependent behavior, V > 5 V, may be explained by a field-assisted emission process
(Poole-Frenkel). The upper limit, V < 8 V, can correspond to a competition between capture and
emission, this voltage being similar to the one observed for the capture process (see details in the
Supporting Information). To go further, more experiments are required to determine the
parameters involved in the SHR (Shockley-Hall-Read) equations (vp, p, NV), as well as
temperature dependent measurements to determine the energy level ET. Moreover, this charge
trapping/detrapping model in organic memory is also the subject of discussion in the literature28;31,
and a more detailed discussion is beyond the scope of this paper. More results on the ON/OFF
switching in these monolayer devices as well on the forming process will be reported elsewhere27.
Reconfigurable logic functions. These memory features can be conveniently integrated into
multi-terminal devices by following a post-fabrication approach. First, the device location between
different coplanar multi-electrodes (here 6, Fig. 9a) spaced by 100 nm is defined by following the
forming process described above. In figure 9a, two inputs (IN1 and IN2) with a common output
(OUT) are randomly selected out of the 6 terminals to define two reconfigurable memory elements
(i.e. located between IN1/OUT and IN2/OUT, respectively) and the previously described forming
process is sequentially applied on these two devices. To demonstrate the reconfigurability of the
resulting multi-terminal devices, we choose to implement a simple reconfigurable logic function
12
with two inputs and one output. This simple system is equivalent to the nanocell device proposed
in 17;18;19 and corresponds to an important step toward the material implementation of this kind of
device. Figure 9 presents the reconfiguration of the multi-terminal device to AND and OR logic
functions. The two devices are programmed by sweeping the voltage at 4V/s between the two
electrodes (between IN1/OUT and IN2/OUT in Fig. 9a) according to the rules shown in Fig. 6 : (i)
0 to 12 V and 12 to 0 V at 4 V/s for the ON state, (ii) 0 to 12 V and 12 V to 0 V abruptly (<0.1 s)
for the OFF state or (iii) 0 to 10 V and 10 V to 0 V abruptly (< 0.1 s) for the intermediate resistance.
Thus, the two devices (IN1/OUT and IN2/OUT) can independently be programmed to three
different resistances. Reading of the nanocell state is realized by applying simultaneously to the
two input terminals square shape pulses of 1 V and 5 V for implementing the logical "0" and "1",
respectively (Fig. 9b). Fig. 9c shows the resulting output current when the two devices are
programmed in the ON state resulting in a Boolean OR logic operation, (with respect to an arbitrary
constant threshold current of 60 nA). By reconfiguring the memory element to an intermediate
resistance state (case iii above), the multi-terminal device can be configured to a logic AND
function (Fig. 9d). Programming the two devices in their OFF state results in no logic operation
(i.e. the output current is always below the threshold value of 60 nA). Obviously, the random
choice of the input /output terminals represents a critical aspect of our devices. Out of 18 equivalent
2 inputs/1 output combinations characterized, this reconfigurable Boolean logic functions is
observed 55 %. This yield can be ascribed to variabilities in both the deposition, the in-situ electro-
polymerization of the molecules/NPs networks and variabilities in the forming process. Future
work will investigate in more detail the dependency between overlapping conducting paths and
the realization of larger multi-terminal devices.
CONCLUSION
13
In summary, we demonstrated organic memristive devices realized by a monolayer-thick 2D
network of gold nanoparticles functionalized by EDOT-thiophene molecules deposited between
two planar electrodes with nanometer gap. The network is electro-polymerized in situ to form a
2D monolayer film of polymer PTEDOT with embedded AuNPs. After a forming process, the
devices show bistable memory behavior with ON/OFF current ratios in the range 103 - 104. A NDR
behavior with a peak/valley ratio up to 17 is systematically observed when the devices are in the
ON state. The dynamic of the switching and programming voltage window are investigated. The
observed switching behavior is compatible with a model of charge trapping/detrapping by the
nanoparticle. A data retention test over more than 1 day and endurance test over 800 switching
cycles are demonstrated. Finally, reconfigurable Boolean logic functions, with multi-terminal
device inspired by the concept of nanocell are implemented.
ASSOCIATED CONTENT
Supporting Information. Synthesis of TEDOT-AuNPs, preparation of TEDOT-AuNPs
monolayers, XPS results, electro-polymerization of the TEDOT-AuNPs monolayers, NDR in both
bias polarities and trapping/detrapping mechanisms. "This material is available free of charge via
the Internet at http://pubs.acs.org."
AUTHOR INFORMATION
Corresponding Author
* E-mail: [email protected].
ACKNOWLEDGMENT
This work has been financially supported by EU FET project n° 318597 "SYMONE", by the ANR
agency, project n° ANR 12 BS03 010 01 "SYNAPTOR" and the French RENATECH network.
14
The authors thank the clean room staff of the IEMN for the assistance and help for the device
fabrication.
15
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19
Figure 1. Schematic of the synthesis of the 10 nm PTEDOT-AuNPs in three steps: first synthesis
of oleylamine capped 10 nm AuNPs from HAuCl4, then exchange of the ligand with TEDOT-SH
molecules and electro-polymerization of the TEDOT-AuNPs.
20
H2NSSOOSSAuSSOOSHSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSHAuCl4H2NH2NH2NH2NNH2NH2NH2NH2NH2NH2NH2H2NH2NOleylamineTEDOT-SHSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSSSOOSSelectro-polymerizationSSOOSSSSOOSSSSOOSSSSOOSSO a) b)
Pt
NP
NP
Pt
Figure 2. (a) SEM image showing the TEDOT-AuNPs monolayer deposited on a nanogap
platinum electrodes (electrode spacing L = 200 nm and electrode width W=100 nm); bar scale
represents 30 nm; (b) Magnified view of an NP interspace.
21
a) b)
Figure 3. (a) Scheme of the in-situ electro-polymerization to form the monolayer between the
electrodes; (b) Electro-polymerization of the TEDOT-AuNPs Langmuir film into a polymer
PTEDOT with embedded AuNPs (PTEDOT-AuNPs) realized in potentiodynamic mode
(electrolyte: 0.1M NBu4PF6 in CH2Cl2 or CH3CN) by multiple scans at 100mV/s.
22
-0.4-0.20.00.20.40.60.81.0-2.5-2.0-1.5-1.0-0.50.00.51.01.52.02.5Current (A)V(Ag/AgCl)
Figure 4. Typical I-V characteristic measured before electro-polymerization (dash-dot blue
curve), after electro-polymerization (dash red curve) and during the forming process (black curve)
on PTEDOT-AuNPs films device with a length and width of 200 nm and 100 nm, respectively for
the electrode gap. Voltage sweep rate around 4 V/s.
23
012345678910111213141510-1210-1110-1010-910-810-710-610-5formedunformedAfter electro-polymerization Current (A)Voltage (V)Before electro-polymerization 01x1052x1053x1054x1055x1056x1057x105Electric field (V/cm) Figure 5. Current-voltage curves during a back and forth voltage sweeps in the ON state,
showing NDR effect, and measured after the forming process on Formed-PTEDOT-AuNPs
device with a length L and width W of 1 µm and 1 mm respectively, for the electrode gap.
Voltage sweep rate around 4 V/s.
24
024681012020406080100120140160Electric field (V/cm)Current (uA)Voltage (V)0.02.0x1044.0x1046.0x1048.0x1041.0x1051.2x105 a)
b)
Figure 6. (a) Typical voltage sequence for the memory behavior and (b) the corresponding
measured I-V curves for the ON-to-OFF and OFF-to-ON switches on a Formed-PTEDOT-AuNPs
device with a length L = 500 nm and width W = 1 mm for the electrode gap. The I-V traces are
numbered in accordance with the voltage sequences shown in (a).
25
05101520020(1) (2) (3) (4)OFF-to-ONV (V)t (s)ON-to-OFF0246810121416182010-810-710-610-510-410-310-210-1VthVmaxMemory Ratio(4)(3)Electric field (V/cm)Current (A)Voltage (V)(1)NDRpeak-valley01x1052x1053x1054x105 a)
26
012345678910110246810121416tVpulseIpulseIONV (V)t ONstate b)
Figure 7. Dynamic measurements on Formed-PTEDOT-AuNPs devices with length and width of
500 µm and 1 mm, respectively: (a) ON-to-OFF dynamics and voltage windows. The switching is
time independent in the range 1 μs - 1 s, and it requires a voltage ≳ 8 V; (b) OFF-to-ON dynamics
and voltage windows. The switching requires a pulse duration > 1 ms and a voltage window
between 5 and 8 V.
27
012345678910110246810121416tVpulseIpulseIONV (V)t OFFstate a)
28
0.00.10.20.30.40.50.60.70.80.91.002468101214IOFFOFF-to-ONIONV (V)t (s)ON-to-OFF010020030040050060070080010-910-810-710-610-5OFF stateON stateCurrent (A)Number of cycles b)
Figure 8. (a) Cycling experiments between ON and OFF states; and (b) data retention experiments
showing the evolution of the ON state and OFF state currents.
29
024681012141000 pulses in 24h OFFstate1000 pulses in 24hV (V)t ONstate10110210310410510-910-810-710-610-510-4OFF stateON state Current (A)Time (s) a)
IN1
IN2
OUT
30
b)
c)
d)
1 0 1 0 1 0 1 0 1 0 1 0
1 1 0 0 1 1 0 0 1 1 0 0
1 1 1 0 1 1 1 0 1 1 1 0
1 0 0 0 1 0 0 0 1 0 0 0
Figure 9. (a) SEM image showing the coplanar multi-electrodes spaced by 100 nm, two inputs
(named IN1 and IN2) and 1 output (named OUT) are chosen on order to define two memory
elements (i.e. located between IN1/OUT and IN2/OUT); bar scale represents 100 nm; (b) the pulse
31
0501001502002503003504000510150.00.20.40.60.81.0ORCurrent (nA)Current (nA)Time (s)AND012345IN1 (V)012345IN2 (V) stream applied on IN1 and IN2; (c) current measured at the OUT electrode after programming the
two devices in the ON state; (d) current measured at the OUT electrode after programming the two
devices in intermediate resistance state.
32
TOC GRAPHIC
33
Negative Differential Resistance, Memory and
Reconfigurable Logic Functions based on
Monolayer Devices derived from Gold
Nanoparticles Functionalized with Electro-
polymerizable Thiophene-EDOT Units
T. Zhang1, D. Guérin1, F. Alibart1, D. Vuillaume1, K. Lmimouni1, S. Lenfant1*
A. Yassin2, M. Oçafrain2, P. Blanchard2, J. Roncali2
1 Institute of Electronics Microelectronics and Nanotechnology (IEMN), CNRS, University of
Lille, Avenue Poincaré, 59652 Villeneuve d'Ascq, France
2 MOLTECH-Anjou, CNRS, University of Angers, 2 Bd. Lavoisier, Angers, 49045, France
SUPPORTING INFORMATION
1. SYNTHESIS OF TEDOT-AuNPs .............................................................................................................................. 2
2. PREPARATION OF THE TEDOT-AuNPs NPSAN MONOLAYER. .............................................................................. 5
3. XPS SPECTRA ON TEDOT-AuNPs MONOLAYER. ................................................................................................... 7
4. ELECTRO-POLYMERIZATION OF THE TEDOT-AuNP MONOLAYER. .................................................................... 10
5. NDR EFFECT IN BOTH POLARIZATIONS .............................................................................................................. 11
6. NDR AND MEMORY MECHANISMS ................................................................................................................... 12
S1
1. SYNTHESIS OF TEDOT-AuNPs
First, oleylamine capped AuNPs were synthesized using the Santhanam's procedure [1] 50
mg of HAuCl4.3H2O in 5 ml of oleylamine (95%) and 5 ml of anhydrous toluene were
dissolved in a schlenk flask equipped with a nitrogen inlet and a condenser. The homogenous
orange solution was maintained under nitrogen atmosphere at 80°C under stirring for 10h.
During this time, the color changed from orange to colorless then to dark red. The NPs
purification was performed by repeated centrifugation/sonication cycles of the solution: the
reaction mixture was first diluted with 30 % of hexane, followed by addition of ethanol to
precipitate the NPs. After centrifugation for 5 min at 7000 tr/min, the supernatant was
eliminated, then the NPs were redispersed in hexane by sonication. This process was repeated
three times and finally the oleylamine-AuNPs were redissolved in 5 mL of toluene (good
stability in this solvent several months at 5°C). By the same precipitation/centrifugation
process, toluene was easily replaced by dimethylsulfoxide (DMSO) for the ligand exchange
reaction with TEDOT-SH (see below). The surface plasmon resonance peak (SPR) is
observed at 524 nm in CHCl3 by UV-vis spectroscopy. Average diameter of NPs measured by
the statistical analysis of SEM image is 9.9 nm (Figures SI-1b and c).
1 Santhanam, V.; Liu, J.; Agarwal, R.; Andres, R. P., Self-assembly of uniform monolayer arrays of
nanoparticles. Langmuir 2003, 19 (19), 7881-7887.
S2
a)
b)
c)
Figure SI-1. a) UV-vis spectrum of oleylamine-AuNPs in CHCl3; (b) SEM image of the
oleylamine-AuNPs monolayer deposited on flat SiO2 surface; c) and the corresponding
average diameter statistical image study.
S3
3004005006007008009000.000.050.100.150.200.250.300.35Absorbance (A.U.) (nm)524 nm4681012141601020304050607080 Nb of eventsDiameter (nm)9.9 nm
Secondly, the synthesis of TEDOT-AuNPs was carried out from oleylamine capped AuNPs.
Dimethylsulfoxide (DMSO) turned out appropriate solvent for EDOT-AuNPs synthesis
whereas water-immiscible 1,1,2,2-tetrachloroethane (TCE) was a suitable solvent for the
preparation of Langmuir films. Solvents were perfectly degassed by nitrogen bubbling. In a
nitrogen glovebox (O2 and H2O < 5 ppm), 5 mg of TEDOT-SH (synthesis described
elsewhere [2]) were added to 1 mL of the previous oleylamine-AuNPs solution in DMSO.
The thiolation was performed at 60°C for 6h under nitrogen in the dark. The ligand excess
was eliminated as following: the reaction mixture was first diluted with 50 % of toluene
(solvents in which TEDOT-AuNPs are few soluble) then centrifuged for 3 min at 7000 tr/min.
The supernatant was eliminated then the precipitate was cleaned thoroughly by fresh toluene.
Finally, a concentrated red-purple solution of TEDOT-AuNPs was obtained by sonication in 1
mL of TCE. We observed a good stability of this solution over long period at 5°C (several
weeks). TEDOT-AuNPs average diameter measured by SEM on a surface after film
formation (see below) is 9.3 nm. The reproducibility of the synthesis of the Au-NPs with this
approach is quite good, with a low dispersion of the average diameter of the NPs (< 1 nm).
The ligand substitution is evidenced by UV-visible spectroscopy in TCE solution (Figure SI-
2). The gold Surface Plasmon Resonance (SPR) of TEDOT-AuNPs is observed at 527 nm,
while the absorption peaks corresponding to the TEDOT ligands is detected in the 315 - 353
nm region in agreement with previous results on the analogous 2 nm TEDOT-AuNPs directly
synthesized with the ligand grafted on the NP by the Brust-Schiffrin method [3].
2 Yassin, A.; Ocafrain, M.; Blanchard, P.; Mallet, R.; Roncali, J., Synthesis of Hybrid Electroactive
Materials by Low-Potential Electropolymerization of Gold Nanoparticles Capped with Tailored
EDOT-Thiophene Precursor Units. Chemelectrochem 2014, 1 (8), 1312-1318.
3 Hiramatsu, H.; Osterloh, F. E., A simple large-scale synthesis of nearly monodisperse gold and silver
nanoparticles with adjustable sizes and with exchangeable surfactants. Chemistry of Materials 2004, 16
(13), 2509-2511.
S4
Figure SI-2. UV-vis spectrum of TEDOT-AuNPs in TCE (with base line correction).
2. PREPARATION OF THE TEDOT-AuNPs NPSAN MONOLAYER.
The preparation of NPSAN (Nanoparticles self-assembled networks) was realized following
the method of Santhanam [1]. 100 µL of the previous EDOT-AuNPs solution in TCE were
spread on a convex water meniscus delimited in a pierced teflon petri dish (hole diameter: 2
cm, see Figure SI-3). Once the half of TCE is evaporated, we observed that the addition of
hexane (~50 µL) favored the formation of a compact NPSAN. After complete evaporation of
TCE and hexane, the floating film was deposited on a clean substrate (lithographed substrate
or silicon dioxide surface without electrodes). The transfer of the floating film was
subsequently realized by dip coating directly on a lithographed substrate. After drying in the
air, the film was rinsed with ethanol.
S5
3004005006007008000.00.20.40.60.81.0527Absorbance (A.U.)(nm)315353336
Figure SI-3. Monolayer film floating on the water surface in a Teflon dish.
The statistical analysis of the NP size was measured by SEM when the NPSAN is transferred
onto the lithographed substrate (see Fig. 2a, main text), the average diameter of the TEDOT-
AuNPs is 9.3 nm with a medium spacing of 2.5 - 3.0 nm within the network (see diameter
dispersion in figure SI-4).
S6
Figure SI-4: Statistical analysis of the TEDOT-AuNPs diameter: average value of 9.3 nm and
FWHM of 1.2 nm. Average spacing between the NPs: 2.5 - 3 nm.
3. XPS SPECTRA ON TEDOT-AuNPs MONOLAYER.
X-ray Photoelectron Spectroscopy was carried out on the deposited TEDOT-AuNPs
monolayer on large silicon dioxide surface without electrodes, to study the chemical
composition of TEDOT adsorbates before electro-polymerization (results of XPS summarized
in Table SI-1, and XPS spectra in Fig. SI-5). The C1s signal show two peaks corresponding to
the different environments of carbon atoms in the EDOT ligand (C-C and C-S at 284.8 eV and
C-O at 286.5 eV) with an experimental ratio C-O/(C-C+C-S) = 0.27 close to expected value
(0.25). Likewise, ratio of experimental atomic concentration Stotal/Ctotal (0.22) was in
accordance with expected value (4/20 = 0.20). The S2p signal is deconvoluted into a pair of
doublets with a 1.2 eV splitting energy centered at 164.5 and 162.6 eV ascribed to sulfur
bound to carbon (thiophene) and sulfur bound to gold, respectively. The characteristic binding
energy of the S2p2/3 at 162.0 eV is in agreement with what is generally found for organothiols
S7
789101112050100150 Number of nanoparticlesSize of nanoparticles (nm)9.3 nm
chemisorbed on Au. [4;5;6] Analysis of the atomic ratios demonstrate that the grafting of
TEDOT-SH on AuNPs was successful. No signal is detected in the N1s region proving the
quantitative substitution of oleylamine ligands by TEDOT-SH. Following the method of
Volkert [6], we evaluate a ligand density of 4.0 molecules/nm2 from the experimental S/Au
ratio (0.407) of atomic concentrations.
Attribution
Binding Energy (eV) Area (A.U.)
FWHM (eV)
Atomic ratios
C1s-C+C1s-S
284.86
C1s-O
286.54
S2p3/2-Au
S2p1/2-Au
S2p3/2-C
S2p1/2-C
162.02
163.15
163.90
165.22
17067
4577
679
338
2279
1095
1.29
1.32
1.34
1.34
1.34
1.34
C-O/(C-C+C-S) = 0.27 (0.25)
Stotal/Ctotal = 0.22 (0.20)
S-C/S-Au = 3.30 (3.00)
Stotal/Autotal = 0.407
Au4ftotal
84.00, 87.70
10783
Table SI-1. XPS analysis of TEDOT-AuNPs NPSAN deposited on large silicon dioxide
surface without electrodes. Areas are corrected by relative sensitivity factors [7].
Experimental values of atomic concentration ratios are compared to theoretical values (in
brackets).
Data from Table 1 are calculated from the following XPS spectra of TEDOT-AuNPs
monolayer.
4 Yang, Y. W.; Fan, L. J., High-resolution XPS study of decanethiol on Au(111): Single sulfur-gold
bonding interaction. Langmuir 2002, 18 (4), 1157-1164.
5 Castner, D. G.; Hinds, K.; Grainger, D. W., X-ray photoelectron spectroscopy sulfur 2p study of
organic thiol and disulfide binding interactions with gold surfaces. Langmuir 1996, 12 (21), 5083-5086.
6 Volkert, A. A.; Subramaniam, V.; Ivanov, M. R.; Goodman, A. M.; Haes, A. J., Salt-Mediated Self-
Assembly of Thioctic Acid on Gold Nanoparticles. Acs Nano 2011, 5 (6), 4570-4580.
7 Moulder, J. F.; Chastain, J., Handbook of X-ray Photoelectron Spectroscopy: A Reference Book of
Standard Spectra for Identification and Interpretation of XPS Data. Physical Electronics Division,
Perkin-Elmer Corporation: 1992.
S8
a)
b)
Figures SI-5. XPS spectra of TEDOT-AuNPs monolayer before electro-polymerization in the
range of (a) C1s and (b) S2p regions with the peaks deconvolution.
S9
29028828628428201x1032x1033x1034x103Counts per secondEnergy Spectrum C-C, C-S C-O Fit16616416216002x1024x1026x1028x1021x103 Counts per secondEnergy (eV) Spectrum S-C S-Au Fit
4. ELECTRO-POLYMERIZATION OF THE TEDOT-AuNP MONOLAYER.
Electrochemical experiments were performed with a Modulab potentiostat from Solartron
Analytical. Platinum working electrodes (WE) were lithographed on a silicon substrate
covered with 200 nm SiO2 oxide with channel lengths comprised between 100 nm and 10 µm
(as described in the Methods section in the main text). This substrate was hermetically fixed
at the bottom of a 0.2 mL Teflon cell (see Figures SI-6a and b) containing the electrolyte
solution. The counter electrode (CE) was a platinum wire (0.5 mm) and Ag/AgCl was used as
a reference electrode (RE) (see Figure SI-6a). The monolayer of TEDOT-AuNPs deposited on
Pt working electrodes was electro-polymerized in situ to form a monolayer film of polymer
with embedded AuNPs (PTEDOT-AuNPs) (see Figure SI-6c and Fig. SI-6d for the reaction).
This polymerization of the monolayer was realized in potentiodynamic mode (electrolyte:
0.1M NBu4PF6 in CH2Cl2 or CH3CN). The short channel length promotes the electro-
polymerization of the entire TEDOT-AuNPs material localized between the two platinum
working electrodes during the electro-polymerization.
S10
a)
Ag/AgCl
electrode
Teflon
cell
Pt wire
CE
.
Sample
b)
c)
d)
Figure SI-6. (a) Picture of the experimental setup for the electro-polymerization with the
counter electrode (Pt wire) and Ag/AgCl reference electrode. (b) Picture of the lithographed
electrodes covered by the Teflon cell containing the electrolyte solution. (c) Picture of the
lithographed electrode after the electro-polymerization. (d) Reaction involved during the
electro-polymerization.
5. NDR EFFECT IN BOTH POLARIZATIONS
The NDR (negative differential resistance) behavior was systematically and repeatedly
observed for all the devices with different geometries, and for both positive and negative
voltages (Figure SI-7). In this example, the maximum peak/valley ratio reaches a value
around 17 in both polarities.
S11
SSOOSRSSOOSREoxSSOOSRn
Figure SI-7. Current-voltage curves during a back and forth voltage sweeps, showing NDR
effect in both polarizations, and measured on Formed-PTEDOT-AuNPs device with a length
and width of 500 nm and 1 mm respectively for the electrode gap.
6. NDR AND MEMORY MECHANISMS
The hole capture by a NP is characterized by a capture time τC given by (according to
Shockley-Hall-Read theory) [8]:
Eq. SI-1
with σp the hole capture cross-section, vp the thermal velocity of charge carriers (holes here)
in the polymers, p the hole density.
The hole detrapping time constant τE is related to the hole emission rate ep (τE=1/ep) with
Eq. SI-2
8 W. Shockley and W.T. Read, Phys. Rev. 87, 835 (1952); Hall, R.N. (1951). Physical Review. 83 (1): 228
S12
-20-15-10-505101520-2-1012 Current (mA)Voltage (V)pv1ppCkTEexpNveTvppp
where NV is the density of states in the valence band (HOMO), k the Boltzmann constant, T
the temperature and ET the energy level of NPs in the PTEDOT band gap (we consider the
typical work function of Au NPs at 4.8-5 eV, and a HOMO of PTEDOT at ∼ 5.4 eV) - Fig.
SI-8a. The results of the dynamic experiments (Fig. 7, main text) can be summarized as
shown in Fig. SI-8b, in which we can distinguish the time domains and voltage windows of
both capture and emission processes, with a region where both processes are in competition.
In the zone where emission and capture occurs together, if we assume that the capture process
dominates the emission, it may explain why emission is only measured for V between 5 and 8
V in the dynamic experiments described in Fig. 7b.
a) b)
Figure SI-8. (a) Schematic energy diagram of the PTEDOT-AuNPs monolayer connected
between two platinum electrodes. (b) Time constant - voltage window plot for the observation
of emission and capture processes (numeric values from Fig; 7 in main text).
S13
|
1903.08906 | 1 | 1903 | 2019-03-21T10:13:52 | Electromagnetic design of a superconducting electric machine with bulk HTS material | [
"physics.app-ph",
"cond-mat.supr-con"
] | The use of high-temperature superconductors in electric machines offers potentially large gains in performance compared to conventional conductors, but also comes with unique challenges. Here, the electromagnetic properties of superconducting electric machines with bulk HTS trapped-field magnets in the rotor and conventional copper coils in the stator are investigated. To this end, an analytical model of the electromagnetic field in radial air-gap synchronous electric machines is developed and validated, taking into account the specific difficulties that occur in the treatment of machines with bulk HTS. Using this model, the influence of pole pair number, stator winding thickness, rotor surface coverage, and air gap width on the machine's Esson coefficient is calculated. In contrast to numerical simulations, the method presented here can provide results within minutes, making it particularly useful for work in early development and systems engineering, where large parameter spaces must be investigated quickly. | physics.app-ph | physics | Electromagnetic design of a superconducting
electric machine with bulk HTS material
Roman Bause, Mark D. Ainslie, Senior Member, IEEE, Matthias Corduan, Martin Boll, Mykhaylo Filipenko,
and Mathias Noe
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Abstract -- The use of high-temperature superconductors in
electric machines offers potentially large gains in performance
compared to conventional conductors, but also comes with unique
challenges. Here, the electromagnetic properties of superconduct-
ing electric machines with bulk HTS trapped-field magnets in the
rotor and conventional copper coils in the stator are investigated.
To this end, an analytical model of the electromagnetic field in
radial air-gap synchronous electric machines is developed and
validated, taking into account the specific difficulties that occur
in the treatment of machines with bulk HTS. Using this model,
the influence of pole pair number, stator winding thickness, rotor
surface coverage, and air gap width on the machine's Esson
coefficient is calculated. In contrast to numerical simulations,
the method presented here can provide results within minutes,
making it particularly useful for work in early development
and systems engineering, where large parameter spaces must
be investigated quickly.
I. INTRODUCTION
Commercial interest in high-temperature superconducting
(HTS) electric machines has recently intensified. This is be-
cause HTS materials enable a considerable increase in air gap
field and current loading, leading to higher torque and power
output than would be possible in a conventionally-conducting
machine of the same size and weight. HTS machines could be
used for applications where conventional electric machines can
not meet the performance requirements such as hybrid-electric
passenger aircraft [1] -- [5]. However, compared to conventional
electric machines, which have been studied extensively, HTS
machines behave differently in many ways. Having an an-
alytical model of the electromagnetic characteristics of the
machine available can simplify and speed up the design,
because with analytical calculations, results can be obtained
very quickly and larger parameters spaces can be investigated
than would be possible with more time-consuming finite-
element calculations. This can be particularly useful in the
context of system optimization, e.g. to determine the influence
of machine properties on other parts of a drive-train such as
power sources or power distribution [6].
In this paper, we develop an analytical model for the
electromagnetic field in the HTS equivalent of a radial-gap
R. Bause was with Siemens AG, Corporate Technology, 82024 Taufkirchen,
Germany, during the preparation of
this work. He is now with Max
Planck Institute of Quantum Optics, 85741 Garching, Germany (e-mail:
[email protected]).
M. D. Ainslie is with the Department of Engineering, University of
Cambridge, Cambridge CB2 1PZ, United Kingdom.
M. Boll, M. Corduan and M. Filipenko are with Siemens AG, Corporate
Technology.
M. Noe is with the Institute of Technical Physics, Karlsruhe Institute of
Technology, 76344 Eggenstein-Leopoldshafen, Germany.
permanent magnet synchronous machine in which bulk HTS
material is used to produce the magnetic field instead of con-
ventional permanent magnets in the rotor. While conventional
permanent magnets are limited to fields of 1.2 T in practical
applications [7], the field trapped in bulk HTS material can be
significantly larger. Furthermore, experiments have shown that
using bulk HTS magnets instead of conventional permanent
magnets in synchronous machines is possible despite the
challenges of cooling and magnetization [8] -- [12].
II. BULK HTS MATERIALS
Progress continues to be made on improving fabrication
techniques for bulk HTS materials, and fields in excess of 17 T
have been achieved in bulk HTS magnets with the field cooling
magnetization (FCM) method [13]. One significant challenge
to the usage of bulks in practical applications is achieving
a simple, reliable and compact magnetization process, which
essentially involves the application and removal of a large
magnetic field that induces a circulating supercurrent in the
bulk. The bulk may then act as a super-strength, quasi-
permanent magnet. Pulsed field magnetization (PFM) shows
the greatest promise as a practical magnetization method,
where the large external magnetization field is applied via a
pulse with a duration on the order of milliseconds, and the
stator coils of a machine can be exploited for this purpose [12].
However, the trapped field generated via PFM is generally
much smaller than the true capability of the material as
indicated by FCM due to the large temperature rise associated
with the rapid dynamic movement of magnetic flux in the
interior of the material [14]. To date, the record trapped field
by PFM is 5.2 T at 29 K [15]. Recently, magnetic fields > 3 T
at temperatures above 50 K have been trapped using PFM
and a portable Stirling cryocooler setup [16], [17]. It has also
been shown that trapped-field magnets can be improved in
regards to stability against demagnetization by external AC
fields [18] and against mechanical forces [19]. In previously
tested machines, the bulk HTS magnets were only magnetized
to 1.3 T or less [20] -- [23]. However, it is reasonable to assume
that with the application of more optimized PFM methods as
well as a machine geometry specifically designed to allow
high magnetization, this number can be increased to reach
values similar to the state of the art for PFM in a laboratory
environment.
The circulating supercurrent in a disc-shaped bulk supercon-
ductor gives rise to a conical trapped magnetic field profile
above the top surface of the bulk in 3D, which can be
approximated to a triangular profile in 2D [24], [25]. This
2
TABLE I
DEFINITION OF ZONES
Zone
Open-circuit
Armature reaction
1
2
3
4
r < Rim
Rim ≤ r < Rom
Rom ≤ r < Ry
Ry ≤ r
r < Riw
Riw ≤ r < Row
Row ≤ r < Ry
Ry ≤ r
Fig. 1. Sketch of the remanent magnetization in the machine, as given by
(1).
A. Open-Circuit Field
profile is shown in Fig. 1. This is in contrast to models for
conventional permanent magnet machines, where a rectangular
field distribution is usually used.
For the purposes of our model, we treat the trapped magnetic
field as a remanent magnetization, analogous to a permanent
magnet. While this does not reflect the microscopic mechanism
by which the field is trapped, it accurately reproduces the real
magnetic field distribution. The Fourier representation of the
triangular profile is given by
(cid:88)
n odd
(cid:16)
(cid:16) nαM
(cid:17)(cid:17)2
4
Mrem,r =
2αM Mmax,r
sinc
cos(npθ), (1)
where Mrem,r denotes the component in the radial direction
of the remanent magnetization, αM is the duty cycle, i.e., the
fraction of the rotor surface which is covered by magnets, and
Mmax,r is the maximum remanent magnetization in the radial
direction. The sinc function is defined as sinc(x) = sin(x)/x.
III. ANALYTICAL MODEL
Although a number of analytical and numerical models have
been developed to describe various aspects of bulk supercon-
ductor magnetization [14], there has been little development
on bulk superconductor-based electric machine modelling [3].
The simplest way of analytically modelling the field in
electric machines is to assume a very small air gap surrounded
by iron, where the magnetic field only has a component in
the radial direction and is constant in this direction. These
assumptions do not make sense in a bulk HTS machine
because the rotor must be surrounded by thermal insulation,
leading to a large air gap where significant change of the
magnetic field in the radial direction can occur. We therefore
apply a two-dimensional approach, in which the magnetic field
depends both on the radial and angular position in the air gap.
In the following, general equations for the magnetic field in
a cylindrically symmetric machine in polar coordinates (r, θ)
are derived. To do so, the machine geometry is divided into
zones where the relative permeability µr is assumed to be
constant. Each zone is ring-shaped, i.e. Ri ≤ r < Ro, 0 ≤
θ < 2π for some inner and outer radii Ri and Ro, respectively.
The geometry used for the model is shown in Fig. 2. In each
zone, the relationship between the fields B and H and the
remanent magnetization M rem is given by
B = µ0 (µrH + M rem) .
(2)
As a first step, the magnetic field of the bulk HTS magnets
in the rotor is computed, neglecting the influence of the stator
windings. The zones are defined as follows: Zone 1 is the
inner part of the rotor, which is assumed to consist of a non-
magnetic material (µr = 1). Zone 2 contains the bulk HTS
magnets with Mrem,r given by (1). Zone 3 contains both
the air gap and the stator windings, since the permeability
µr of most winding materials is close enough to unity that
the effect of it can be safely neglected. Finally, zone 4 is
the stator yoke made of a highly permeable material, so we
assume µr → ∞, which is justified if the distance between
the rotor magnets and the yoke is large enough for the field
to decay below the yoke's saturation field. An overview of
the zone layout is given in Table I. Because we treat the bulk
HTS magnets like permanent magnets, it is possible to use a
scalar magnetic potential which is defined by H = −∇φ, to
calculate the fields. Using an approach analogous to [26], the
Poisson equation
∇2φ =
∂2φ
∂r2 +
1
r
∂φ
∂r
+
1
r2
∂φ2
∂2θ
=
Mrem,r
µrr
(3)
can be solved to find φ(r, θ) for each zone. The solution is
given in Appendix A. The resulting field components in zone
m are
Br,m(r, θ) = −µ0µr,m
npMn
(cid:88)
n odd
(cid:16)
An,mrnp−1
(cid:33)
− Cn,mr−np−1 +
Bθ,m(r, θ) = µ0µr,m
+ Cn,mr−np−1 +
δm,2 np
µr,m(1 − (np)2)
(cid:88)
(cid:16)
npMn
An,mrnp−1
cos(npθ),
(4)
(cid:33)
n odd
δm,2
µr,m(1 − (np)2)
sin(npθ).
(5)
Here, n denotes the harmonic order, p is the pole pair
number of the machine, Mn are the Fourier coefficients from
(1) and δn,m is the Kronecker symbol, defined as δn,m = 1
for n = m and 0 otherwise. The coefficients An,m and Cn,m
depend on the machine geometry and are found by imposing
the condition that Br and Hθ must be continuous across all
zone boundaries. These coefficients are listed in Appendix B.
A method to deal with the singular case np = 1 can be
found in [26], however, in this study, we limit ourselves to the
more common case of p > 2.
θπ/pBmax/μ0Mrem 3
Fig. 3. Radial component of the total B field, i.e., the sum of the open-circuit
and armature reaction fields, as computed with our model for the base-line
machine described in Table II.
(cid:16)
(cid:18)
(cid:16)
(cid:18)
(cid:88)
(cid:33)
(cid:88)
(cid:33)
n odd
Fnnp
(cid:18)
sin
n
n,mrnp−1
A(cid:48)
(cid:19)(cid:19)
pθ − 2πk
Np
n odd
Fnnp
(cid:18)
cos
n
n,mrnp−1
A(cid:48)
(cid:19)(cid:19)
pθ − 2πk
Np
,
(8)
.
+ C(cid:48)
n,mr−np−1 − δm,2 r
4 − (np)2
Bθ,m(r, θ, t) = −µ0µr,mJk(t)
− C(cid:48)
n,mr−np−1 − δm,2 2r
4 − (np)2
(9)
Here, Fn is introduced as a shortcut for the Fourier compo-
nents given in (7) and Jk(t) is the current density in phase k at
time t. The coefficients A(cid:48)
n,m are listed in Appendix
C. An example of the magnetic field this model yields can be
seen in Fig. 3.
n,m and C(cid:48)
Fig. 2. Sketch of the machine dimensions as used for the analytical model.
The three phases of the stator winding are shown in red, green, and blue.
In the second step, the field created by the stator windings is
computed. For this computation, a different zone distribution
is required: Zone 1 encompasses the entire space inside the
stator (i.e., the rotor and air gap), which is assumed to have
µr = 1. Zone 2 contains the windings. Zone 3 is the space
between the stator windings and yoke, which is assumed to
have zero width in all subsequent calculations and is therefore
not shown in Fig. 2. Zone 4 is the stator yoke with µr → ∞.
Instead of the scalar potential φ, the vector potential ϕ defined
by H = ∇ × ϕ, must be used for this calculation, because
currents have to be taken into account. For a two-dimensional
model of the magnetic field, only the component along the
machine axis, ϕz, is relevant. Therefore, when replacing φ
with ϕz, a modified version of (3) is still valid:
B. Armature Reaction Field
Br,m(r, θ, t) = −µ0µr,mJk(t)
∇2ϕz = −J,
(6)
C. Computation of Torque
where J is the current density. An analogous approach to
the one shown in the previous chapter can be used to find the
solution of this differential equation [27], [28]. The general
solution for ϕz is shown in Appendix A. The magnetic field
can be computed via Br(r, θ) = µ0µrr−1 · ∂ϕz/∂θ and
Bθ(r, θ) = −µ0µr∂ϕz/∂r.
The winding configuration we consider is a distributed
winding with Np phases as seen in Fig. 2 for the case Np = 3.
Within the cross-section of the conductors of each phase, we
always assume constant J. Therefore, the Fourier components
of the spatial current distribution along the tangential machine
direction are
(cid:88)
n odd
(cid:16) nα
(cid:17)
2
J(θ) =
2αJmaxsinc
cos(npθ).
(7)
J(r, θ, t) =
The components of the armature reaction field in zone m
for phase k are
n,l,k
(cid:90) 2π
(cid:90) Row
0
Riw
The torque produced by a machine can be computed by
using the equation for the Lorentz force,
FL = J × B.
(10)
From this, with the assumption that the current density in
the stator is purely in z-direction, it follows that the torque is
given by
T (t) = leff
dθ
dr r2J(r, θ, t)Br(r, θ, t).
(11)
Here, leff is the effective machine length. By writing the
total J(t) for all phases k in terms of Fourier components in
both the spatial and time domains,
(cid:88)
(cid:18)
(cid:18)
(cid:18)
(cid:18)
(cid:19)(cid:19)
(cid:19)(cid:19)
,
pf t − k
Np
pθ − 2πk
Np
FnJl cos
2πl
× cos
n
(12)
Stator YokeBulk HTS MagnetsWindingsAir GapRiwRowRyθRomRim and making use of the orthogonality of the cosine functions,
the mean torque T can be expressed as
(cid:88)
n odd
FnMnJnnp
T = fmech
T dt = − π
2
µ0Npleff
(cid:90) 1/fmech
(cid:90) Row
0
×
dr An,3rnp+1 − Cn,3r−np+1. (13)
Riw
From this, the Esson coefficient C for a given rotor radius
Rom and machine length l can by computed:
C =
πT
2R2
oml
(14)
We use this number to estimate the effectiveness of the elec-
tromagnetic part of a machine design in terms of efficient use
of available space. This offers a convenient way to compare
the electromagnetic characteristics of different machines. Note
that C is usually given in units of W min/m3. Typical values
for air-cooled machines at nominal powers on the order of 100
kW are 4 to 5 kW min/m3 [29].
D. Implementation
The model was implemented in the python programming
language, making use of the sympy 1.1.1 and numpy 1.12.x
libraries for analytical and numerical computations [30]. Har-
monic orders n ≤ 19 were computed for all model runs. We
were able to solve the analytical equations and evaluate them
numerically over 106 data points within one minute with a 3.2
GHz CPU.
There are two cases where two zones with the same per-
meability are adjacent. In these cases, a model with fewer
zones could be used, or else the permeability must be made
slightly different in one of the zones to avoid a singularity of
the model. To preserve the generality of the model, we used
the latter approach and assumed µr = 1 + in the case of the
bulk HTS magnets (zone 2 in the model of the open-circuit
field), where is much smaller than the precision of the model.
In the case of the copper windings (zone 2 for the armature
reaction field), we took into account the fact that copper is
weakly diamagnetic and assumed a value slightly less than 1.
IV. ELECTROMAGNETIC MACHINE DESIGN
A. Geometrical Parameters
To assess the performance and usefulness of the model, we
performed calculations for an example machine. We computed
the dependence of the Esson coefficient as given in (14) on
certain parameters, while other parameters were set to values
we consider realistic. The bulk HTS magnets were assumed
to be cylindrical discs of 1.5 cm thickness and 4 cm diameter
with a trapped field of 3 T at the surface center, similar to
what was demonstrated in [16]. This assumption is motivated
by the conditions imposed by manufacturing and magnetising
the bulks: As long the material can be magnetized perfectly,
larger bulk HTS disks are always favourable, since they can
trap higher magnetic fields in their center. However, larger
disks are more likely to contain material defects and require
PARAMETERS AND PROPERTIES OF THE BASE-LINE MACHINE
TABLE II
4
Model input
Tangential magnet size
Magnet thickness
Peak air gap field Bmax
Rotation speed fmech
Phase number Np
Machine length l
Air gap width dA
Rotor radius Rom
Stator winding current density J
Rotor surface coverage αM
Pole pair number p
Stator winding thickness dW
Model output
Effective length leff
Mean torque T
Esson coefficient C
Power P
Estimated active part mass
4 cm
1.5 cm
3 T
1500 rpm
3
20 cm
1.2 cm
10.2 cm
9 A/mm2
80 %
6
3.0 cm
10.5 cm
647 kN
7.99 kW min/m3
102 kW
39 kg
stronger external fields to fully magnetize. Since the magnet
size is constant, in simulations with different values for p or
αM , the rotor radius is changed accordingly.
For the stator, we assumed a standard three-phase distributed
stator winding made of copper wire to keep the design simple.
The duty cycle αW for each stator winding was chosen to
be 0.95/Np, where Np is the phase number,
in order to
allow sufficient space between windings for insulation. For
each phase, we assumed a sinusoidal
time-dependence of
the current. Further, we assumed a peak current density of
9 A/mm2 in the stator cross-section, which can be achieved
by interspersing water cooling tubes with copper wires. In this
configuration, a peak current of 25 A/mm2 flows through the
copper wires, which make up 35% of the cross section of each
winding. This configuration is similar to the state of the art in
commercial non-superconducting, high power-density electric
machines [31]. In order to partially correct the error caused
by using a two-dimensional model, the machine length l was
multiplied by a correction factor to obtain an effective length,
leff. The correction factor was found by comparing the total
magnetic flux from an infinitely long bar of bulk HTS material
with the flux from an infinitely long line of cylindrical bulks.
The factor was found to be π/6 ≈ 0.5. This correction factor
does not take into account flux leakage in the axial direction,
so that we can expect the model to overestimate the torque,
with the error becoming larger for small machine lengths.
With these parameters set, we made preliminary decisions
about the remaining geometric degrees of freedom according
to experience with non-superconducting machines and some
extrapolation, arriving at a base-line design, which served as
a starting point for parameter scans. The properties of the base-
line machine are summarized in Table II.
Even though a smaller air gap is theoretically always
beneficial, the air gap size is limited by the requirement to
accommodate cryogenic insulation around the rotor. We expect
5
Fig. 4. Esson coefficient C versus air gap width dA.
Fig. 6. Esson coeffcient C versus pole pair number p.
Fig. 5. Esson coeffcient C versus rotor surface coverage αM .
Fig. 7. Esson coeffcient C versus stator winding thickness dW for three
different values of the pole pair number.
that the smallest practical electromagnetic air gap width, with
the rotor operated at 50 K and the stator at room temperature,
is 1.2 cm. A scan of the air gap width was performed to assess
the importance of this parameter, and the results are shown in
Fig. 4. The large slope observed in this scan suggests that it
may be worth developing advanced mechanical construction
and isolation techniques to minimize air gap thickness, even
though this is likely to be highly difficult.
We also performed a scan of the impact of the rotor surface
coverage αM on the Esson number, as shown in Fig. 5.
According to these data, increasing αM beyond 85% will
actually decrease the torque. This is caused by the fact that,
even though more total flux is produced on the rotor surface
for higher αM , the leakage also increases and the additional
flux never reaches the stator.
The two most interesting parameters to scan are the pole
pair number p and the thickness of stator windings dW . This
is because both of these strongly influence the machine's
performance, while also containing trade-offs in the electro-
magnetic design. For example, one will always make the air
gap width as small as is possible with given mechanical and
thermal constraints, but p and dW can behave non-linearly and
will likely exhibit an optimum, even when only considering
electromagnetic machine properties compared to the machine's
volume or mass. As long as the stator windings are very thin,
we can expect the generated torque to grow linearly with dW ,
but this must saturate once the field inside the stator coils has
decayed due to leakage. At this point, adding more copper
would only contribute useless weight. We performed a scan
of p for the base-line design and and additional scan of dW
at different values of p, to show the connection between these
two variables, as shown in Figs. 6 and 7. In the p-C diagram,
it can be seen that the Esson number first decays quickly and
then approaches a constant value. This is because at low p,
and correspondingly low machine radii, the stator windings are
wedge-shaped, allowing for higher total currents and stator
fields. At large p, the stator winding shape asymptotically
approaches a rectangle.
B. Model Validation
To validate our analytical model with a finite element
method (FEM), we built a static two-dimensional solution
type model in Ansys Maxwell 19.0.0, shown in Fig. 8. As
input parameters, the model used the same dimensions and
properties as for the particular case of the base-line machine
shown in Table II. Master and slave boundary conditions were
set at the cut edges of the model, making use of symmetry,
such that the simulation of only one twelfth of the machine is
required. At the edge of the ambient air, the vector potential
was set to zero. Power was supplied to the three-phase stator
coils through solid current excitations with 5775 A, which
corresponds to 9 A/mm2.
The assumed typical triangular shaped field profile in the
analytical model was mimicked in the FEM model by a single-
0.500.751.001.251.501.752.00Air gap width dA (cm)678910Esson coeff. C (kW min/m3)0.50.60.70.80.91.0Rotor surface coverage M6.57.07.58.0Esson coeff. C (kW min/m3)51015Pole pair number p681012Esson coeff. C (kW min/m3)01020304050Stator winding thickness dW (mm)051015Esson coeff. C (kW min/m3)p=3p=6p=12 6
Fig. 9. Radial field Br in the base-line machine as described in Table II
in comparison of the analytical model and the numerical simulation. (a): At
the outer radius of the magnets Rom (b): At the inner radius of the stator
windings Riw.
[7] J. F. Gieras, R.-J. Wang, and M. J. Kamper, Axial Flux Permanent
Magnet Brushless Machines. Springer, 2008.
[8] H. Matsuzaki, Y. Kimura, I. Ohtani, M. Izumi, T. Ida, Y. Akita,
H. Sugimoto, M. Miki, and M. Kitano, "An axial gap-type HTS bulk
synchronous motor excited by pulsed-field magnetization with vortex-
type armature copper windings," IEEE Trans. Appl. Supercond., vol. 15,
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[9] Y. Jiang, R. Pei, W. Xian, Z. Hong, and T. A. Coombs, "The design,
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[10] Z. Deng, M. Miki, K. Tsuzuki, B. Felder, R. Taguchi, N. Shinohara, and
M. Izumi, "Pulsed field magnetization properties of bulk RE-Ba-Cu-O
as pole-field magnets for HTS rotating machines," IEEE Trans. Appl.
Supercond., 2011.
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[12] Y. Zhang, D. Zhou, T. Ida, M. Miki, and M. Izumi, "Melt-growth
bulk superconductors and application to an axial-type rotating machine,"
Supercond. Sci. Technol., vol. 29, p. 044005, 2016.
[13] J. H. Durrell, A. R. Dennis, J. Jaroszynski, M. D. Ainslie, K. G. B.
P. Y.-H. Shi, A. M. Campbell, J. Hull, M. Strasik, E. E. Hellstrom,
and D. A. Cardwell, "A trapped field of 17.6 T in melt-processed, bulk
Gd-Ba-Cu-O reinforced with shrink-fit steel," Supercond. Sci. Technol.,
vol. 27, no. 8, p. 082001, 2014.
[14] M. Ainslie and H. Fujishiro, "Modelling of bulk superconductor mag-
netization," Supercond. Sci. Technol., vol. 28, no. 5, p. 053002, 2015.
[15] H. Fujishiro, T. Tateiwa, A. Fujiwara, T. Oka, and H. Hayashi, "Higher
trapped field over 5 T on HTSC bulk by modified pulse field magnetiz-
ing," Physica C, vol. 445 -- 448, pp. 334 -- 338, 2006.
[16] D. Zhou, M. D. Ainslie, Y. Shi, A. R. Dennis, K. Huang, J. R. Hull,
D. A. Cardwell, and J. H. Durrell, "A portable magnetic field of >3 T
generated by the flux jump assisted, pulsed field magnetization of bulk
superconductors," Appl. Phys. Lett., vol. 110, no. 6, p. 062601, 2017.
[17] K. Yokoyama, A. Katsuki, A. Miura, and T. Oka, "Enhancement of
Fig. 8. Radial component of the B field generated only by HTS magnets and
computed with the parameters from the base-line machine in Table II with
FEM.
turn coil of the same dimensions as the bulk HTS magnets. The
supply and return conductor windings of this coil are adjoined
and their current density was set to 346 A/mm2 such that the
resulting peak air gap field on the outer coil surface Bmax
reached the same value of 3 T as for the HTS magnets.
As seen in Fig. 9, the radial component of the total field
matches the analytical results, with the small deviations seen
close the field maxima at the stator surface being explained by
the non-linear behaviour of the yoke. The machine achieved
an Esson coefficient of 7.79 kW min/m3 at a load angle of
π/2 and is thus 2.5% lower than in the analytical calculation.
This level of agreement between the analytical and numerical
models is to be expected due to the different approximations
that were made.
V. ACKNOWLEDGMENTS
M. A. would like to acknowledge financial support from an
Engineering and Physical Sciences Research Council (EPSRC)
Early Career Fellowship EP/P020313/1. All data are provided
in full in the results section of this paper. We thank Marc Less-
mann, Yingzhen Liu and John Durrell for helpful discussions.
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APPENDIX A
SOLUTIONS OF THE POISSON EQUATION
An,mrnp + Cn,mr−np +
(cid:32)
δm,2 r
(cid:16)
n,mr−np − δm,2 r2
4 − (np)2
1 − (np)2(cid:17)
(cid:33)
µr,m
A(cid:48)
n,mrnp + C(cid:48)
(cid:88)
(cid:88)
n odd
n odd
cos(npθ).
cos(npθ),
φm(r, θ) =
Mn
ϕz,m(r, θ) =
Fn
APPENDIX B
(cid:0)R2np
COEFFICIENTS FOR OPEN-CIRCUIT FIELD
(cid:1) (1 − np)(1 − µr,2) + RimR4np
om (1 + np)(1 − µr,2)
imR3np+1
om (npµr,2 − 1) − Rnp+1
om R2np
y Rnp
y + R2np
om
R2np+1
om (1 + np)(1 + µr,2) + 2Rnp
im
y R2np
im(npµr,2 + 1)(cid:1) ,
−np
im
An,1 =K−1R
(cid:16)
An,2 =(µr,2K)−1(cid:16)
+RimR2np
Cn,1 =0,
−R2np
y Rnp+1
Cn,2 =(µr,2K)−1Rnp
om (−1 − µr,2)(1 − npµr,2)
(cid:17)
om (−1 + µr,2)(1 − npµr,2)(cid:1) ,
om (1 + µr,2)(1 − npµr,2)
imR2np+1
,
om(1 − npµr,2) + R2np+1
im Rom(1 − µr,2)(1 + np) + R2np+1
om (1 − µr,2)(1 − npµr,2)
(cid:17)
om (−1 − µr,2)(1 − np)
(cid:17)
om (1 + µr,2)(1 − np)
,
,
y Rnp+1
im (1 − µr,2)(1 − npµr,2) + R3np+1
R2np
om (1 + µr,2)(1 + npµr,2) + Rnp+1
im R2np
(cid:0)R2np
om(−1 − µr,2)(1 − npµr,2) + Rnp
+R2np
imRnp
om
y RimRnp
An,3 =K−1(cid:16)
imRom(1 − µr,2)(1 + npµr,2) + RimR3np
y Rnp
im Rom(−1 + µr,2)(1 + np) + 2Rnp+1
R2np
im Rnp
Cn,3 =K−1R2np
om(1 + npµr,2) + R2np
y Rnp
om
An,4 =0,
Cn,4 =0,
im Rnp
2Rnp+1
(cid:16)
K =(np + 1)(np − 1)
R2np
y R2np
−R2np
y R2np
om (1 + 2µr,2 + µ2
im (1 − 2µr,2 + µ2
r,2) + (R2np
im R2np
r,2)
(cid:16)
(cid:17)
om − R4np
om )(1 − µ2
r,2)
.
COEFFICIENTS FOR ARMATURE REACTION FIELD
APPENDIX C
ow R2np
y Rnp
iw (np + 2) + R2
ow (−1 + µr,2)(2 + np)
iwR4np
R2np
iw
y R2np+2
ow (1 + µr,2)(2 + np) + 2Rnp
(−1 + µr,2)(2 − np) + Rnp+2
iw R3np+2
ow
iwR2np
y R2np
iw R2np
(2 − np) + R2np+2
ow (−1 − µr,2)(2 − np)
(cid:17)
(1 + µr,2)(2 − npµr,2)
ow (1 + µr,2)(−2 + npµr,2)
,
R2np
ow
y Rnp+2
ow (1 + µr,2)(1 + npµr,2) + Rnp+2
iw (−1 + µr,2)(2 − npµr,2) + R3np+2
iw R2np
(cid:0)R2
(cid:16)
ow(−1 − µr,2)(2 − npµr,2) + Rnp
(cid:16)
ow(−2 + np) + R2np
2Rnp+2
iw R2
ow(−2 + npµr,2) + R2np
ow (−1 + µr,2)(2 − npµr,2) + R2np
(1 − µr,2)(2 − npµr,2),
iw R2np+2
ow(1 − µr,2)(2 + np) + R2np+2
iw R2
ow(1 − µr,2)(2 + np) + R2np+2
iw Rnp
iw Rnp
y Rnp
iwR3np
Rnp+2
iw R2
ow
ow
ow
ow(1 − µr,2)(2 − npµr,2)
(1 + µr,2)(2 − np)
,
(1 − µr,2)(2 + np)
(cid:17)
,
(cid:17)
,
(cid:17)
(cid:16)
A(cid:48)
n,1 =E−1µr,2
−R2
n,2 =E−1(cid:16)
C(cid:48)
n,1 =0,
A(cid:48)
+ R2
y Rnp
+R2np
C(cid:48)
n,2 =E−1Rnp
y Rnp+2
iw Rnp
ow
iwR2np
A(cid:48)
n,3 =E−1µr,2Rnp
C(cid:48)
n,3 =E−1R2np
y Rnp
ow
A(cid:48)
n,4 =0,
C(cid:48)
n,4 =0,
E =np(np + 2)(np − 2)
ow
(cid:16)
−R2np
y R2np
ow (1 + 2µr,2 + µ2
R2np
y R2np
iw (1 − 2µr,2 + µ2
r,2) + (R2np
iw R2np
r,2)
ow − R4np
ow )(1 − µ2
r,2)
.
(cid:17)
8
(15)
(16)
(17)
(18)
(19)
(20)
(21)
(22)
(23)
(24)
(25)
(26)
(27)
(28)
(29)
(30)
(31)
(32)
(33)
(34)
|
1905.08569 | 2 | 1905 | 2019-08-21T11:04:38 | Limits of III-V nanowire growth based on particle dynamics | [
"physics.app-ph",
"physics.chem-ph"
] | Crystal growth of semiconductor nanowires from a liquid droplet depends on the stability of this droplet at the liquid-solid interface. By combining in-situ transmission electron microscopy with theoretical analysis of the surface energies involved, we show that truncation of the interface can increase the stability of the droplet, which in turn increases the range of parameters for which successful nanowire growth is possible. In addition to determining the limits of nanowire growth, this approach allows us to experimentally estimate relevant surface energies, such as the GaAs $\{11\bar{2}0\}$ facet. | physics.app-ph | physics | Limits of III-V nanowire growth based on particle dynamics
Marcus Tornberg,1, 2, ∗ Carina B. Maliakkal,1, 2 Daniel
Jacobsson,3, 2 Kimberly A. Dick,1, 3, 2 and Jonas Johansson1, 2
1Solid State Physics, Lund University,
Box 118, 22100, Lund, Sweden
2NanoLund, Lund University,
Box 124, 22100, Lund, Sweden
3Centre for Analysis and Synthesis/nCHREM, Lund University,
Box 124, 22100, Lund, Sweden
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Abstract
Crystal growth of semiconductor nanowires from a liquid droplet depends on the stability of this
droplet at the liquid-solid interface. By combining in-situ transmission electron microscopy with
theoretical analysis of the surface energies involved, we show that truncation of the interface can
increase the stability of the droplet, which in turn increases the range of parameters for which
successful nanowire growth is possible. In addition to determining the limits of nanowire growth,
this approach allows us to experimentally estimate relevant surface energies, such as the GaAs
{1 1 2 0} facet.
Formation of semiconductor nanowires from a nanoscale liquid droplet by the vapor-
liquid-solid process is an important example of complex, multiphase crystal growth. This
process allows for the formation of anisotropic crystals with highly precise selectivity for
crystal phase[1], composition[2, 3], morphology[4, 5] and properties[6]. While the nucleation
step and its role in material properties has been investigated in detail[7 -- 9], less attention has
been paid to the overall stability of the process and the conditions required for the droplet
to remain at the top of the nanowire during growth[10, 11]. This condition is essential to
prevent nanowire kinking and spontaneous change of growth orientation[12, 13], displace-
ment of the droplet from the nanowire[14, 15] and failure of the growth process itself[10]. A
fundamental stability criterion for a droplet to remain at the top of a nanowire during its
growth has been proposed by Nebol'sin and Shchetinin[10] based on ex-situ observations and
earlier theoretical work [16, 17](see ref [18] for a modern discussion of Young's equation).
The wetting properties of the droplet during nanowire growth have subsequently been in-
vestigated; theoretically by addressing the droplet stability [15, 19, 20], and experimentally
by focusing on morphology and nucleation[21 -- 24]. Still, the Nebol'sin-Shchetinin stability
criterion remains generally accepted, perhaps due to the simplicity of the model.
The Nebol'sin-Shchetinin model predicts an upper bound for having a droplet on the top
nanowire facet by relating the ratio of the surface energies of the solid and liquid phases in
contact with the vapor (γsv and γlv) to the wetting angle and tapering of the nanowire[10].
Although the model is widely accepted, its predictions frequently disagree with experimental
observations: for instance growth of self-assisted GaAs[25] and InAs[26] nanowires has been
extensively reported, although the relevant surface energy ratios in these cases fall outside the
2
FIG. 1. The surface forces pulling on a droplet, based on surface energies at the interfaces (γvs, γlv,
γls), are superimposed on a conventional transmission electron micrograph of a Au-droplet on top
of a GaAs nanowire. This overview is accompanied by a schematic illustrating the angles used for
orienting these forces with respect to each other; taking into account the dependence of truncation
(φ), tapering (δ) and wetting angle (β).
predicted stability range (γsv/γlv ≈ 2 compared to the maximum ratio of
nanowires[10]). Moreover, the model is based on the assumption that the interface between
2 for un-tapered
√
droplet and nanowire is flat, which, according to in-situ experimental results[8, 22, 23, 27],
is not always the case during growth. These in-situ experimental reports instead indicate
a dynamic interface that may become truncated during growth, which could be one of the
reasons for the mismatch between experimental and theoretical studies.
In this letter, we address the stability of the droplet wetting the nanowire top facet during
growth by combining in-situ real-time transmission electron microscopy (TEM) observations
of GaAs nanowire growth, with a theoretical model that expands on the Nebol'sin-Shchetinin
stability criterion to allow the possibility of interface truncation. Given that the truncating
facet has been observed to oscillate, in both size and truncation angle[8, 22], we also con-
sider a lower limit of the surface energy ratio and wetting of a truncated droplet-nanowire
interface to evaluate the condition for which a specific truncation would be probable. By
measuring the droplet wetting angle in-situ during growth and estimating its surface ten-
sion, we demonstrate that the stability range for nanowire growth with a liquid droplet is
extended by formation of a truncated interface.
To introduce the possibility of truncation into the stability condition for having a droplet
on the top facet of a nanowire, we introduce further geometrical dependence for the balance of
3
the surface (capillary) forces resulting from the corresponding surface energies, as depicted
in figure 1. The figure shows an overview of the droplet-nanowire morphology, depicting
tapering, wetting and truncation angles as well as the relevant surface energies. To balance
the surface forces, we consider all solid-vapor, liquid-vapor and liquid-solid interfaces to have
the surface energies γsv, γlv and γls, respectively. The respective orientation of the interfaces
depends on the tapering angle (δ), the wetting angle (β) and the possible truncation of
the top facet (φ). Balancing the horizontal forces laterally at the triple-phase boundary
(arrows) in figure 1 provides a geometrical relation between the surface energies of the
system according to
γls cos φ = γsv sin δ − γlv cos β
(1)
Similarly, the vertical components of the surface forces are evaluated to favor a downward
resulting force to study the limits for a droplet to remain stable on the top facet,
γls sin φ + γlv sin β < γsv cos δ
(2)
Elimination of γls, using equations 1 and 2, provides the geometrical condition for the
surface energy ratio when the droplet wets part of the nanowire sidewall (i.e. the solid-
vapor interface),
γsv
γlv
sin β cos φ − cos β sin φ
cos δ cos φ − sin δ sin φ
(3)
which reduces to γsv/γlv > sin β for un-tapered nanowires with a flat growth interface (δ=0◦
and φ=0◦). Thus equation 3 represents a lower limit for the surface energy ratio.
>
.
For the droplet to remain stable on the top facet while having a downward resulting force
requires that the resulting force must be directed upwards as soon as the liquid starts to wet
the nanowire sidewall. If the resulting force continues to be downward, the droplet would be
expected to be displaced from the top facet to the sidewall[14, 28]. This results in an upper
bound for the surface energy ratio to allow the droplet to remain on the top facet and can
be represented by following inequality,
γsv
γlv
sin β cos φ − cos β cos δ
cos δ cos φ − sin δ cos δ
(4)
This ratio reduces to sin β − cos β for un-tapered nanowires with a non-truncated interface
between droplet and nanowire, just as in the original model[10]. The bounds presented,
<
equations 3 and 4, are drawn in figure 2 for un-tapered nanowires with a flat growth interface
4
FIG. 2. A graph over the theoretically predicted an interval for having a droplet on the nanowire
top facet (δ = 0◦) during growth, bounded by equation 3 and 4 for a truncation angle of 0◦ (black),
35◦ (blue), 45◦ (green) and 55◦ (red). We observe how the maximum allowed surface energy ratio
increases as the truncation angle increases. Note how the lower bound for 45◦ and 35◦ overlap with
the upper bound for 0◦ and 45◦, respectively.
(φ = 0◦) and for truncated growth fronts (φ > 0◦). Here it is evident that the truncation
itself extends the stability limit for having a droplet on the top of a nanowire, or a pillar-like
structure, allowing higher surface energy ratios than
√
2.
To test the predictions of the model, (0 0 0 1)-oriented Au-assisted wurtzite GaAs
nanowires were grown in a transmission electron microscope (TEM) by supplying tri-methyl-
gallium (TMGa) and arsine to a SiNx grid, locally heated to 420 ◦C[29]. When successively
increasing the flow of Ga precursor, the size of the Au-Ga droplet was observed to increase
as presented in figure 3a-b. The volume increase is attributed to Ga accumulation in the
droplet, which in turn would lower the droplet surface tension since the Au content remains
the same and Ga has a lower surface tension. This allowed us to study several combinations
of surface energy ratios and wetting angles, in order to test our model using growth pa-
rameters similar to previous reported work on Au-GaAs nanowire growth[30, 31]. In order
to compare the experimental observations of the droplet to the model, we estimated the
volume of the droplet from continuously recorded TEM images with 50 ms exposure time.
The estimated change in droplet volume has been shown to provide a good indirect measure-
ment of the change in composition of Au-Ga droplets during nanowire growth[30]. Based
on the volume change, we extract the Ga-concentration in the droplet using a reference
5
quantification done by X-ray energy dispersive spectroscopy[29, 32] of the same nanowire.
As the size of the droplet increases, we observe truncation of the liquid-solid interface as
seen in figure 3c. However, this truncation is not always present during the conditions for
our growth as shown by the snapshot taken 2 s later, which is presented in figure 3d. Based
on image recordings, provided as supplementary materials, we observe that the truncation
size to change in time, similar to previous reports which have connected it to the droplet
supersaturation[8]. In addition, we observe the average truncation angle to vary from 35◦
to 55◦ between truncation events. Based on the image recordings during GaAs nanowire
growth as the Ga flow into the droplet was successively increased, we measured the wetting
(β) and tapering angles (δ) and estimated the liquid tension based on the droplet volume.
These parameters, along with the truncation angle (φ), were used to compare our stability
model in figure 2 with experimental data. For this comparison, we display the stability
regime for a non-truncated interface facet and for the average experimental truncation angle
(45◦) in figure 4.
FIG. 3. As the Ga flow is increased the Au-Ga droplet (darker contrast) is observed to increase
its volume (a, b) during the TEM recording of the wurtzite crystal growth. As the droplet was
allowed to expand, we observe a truncation of the edge of the interface between the nanowire and
the droplet, indicated by arrows (b, c). However, this is not always present but dynamically moves
with the droplet and returns to a flat interface from time to time (d).[29]
6
The experimental data, included in figure 4 as data points, have been extracted from
measurements of the wetting angle and the estimate of the droplet volume from its two-
dimensional projection. Assuming that the recording of the droplet is a two-dimensional
projection of a spheroidal cap, and that any added volume to the droplet is pure Ga, allows
for an estimation of the droplet composition for each frame of interest. From the composition,
the surface tension is estimated by linear extrapolation from the pure species (Au and
Ga[33, 34]), see supporting information for the details on the estimation[29]. Each extracted
data point is then related to whether or not a truncation has occurred recently (within
0.5 s), presented as green or black in figure 4. From this data we are able to determine
an experimental upper limit for the liquid-solid interface (γls,000¯1) as well as an estimate
of the solid-vapor surface energy (γvs,10¯10), which will be discussed below. By evaluating
equation 1 for the wetting angle (β) and surface tension (γlv) for a nanowire without tapering
or truncation (φ, δ = 0◦) we observe that γls,000¯1 does not exceed 0.6 J/m2. Details and
limitations are presented as supporting information. In order to estimate the surface energy
of the nanowire sidewall (γvs) we utilize our observations together with the stability interval
presented in this letter (equation 3 and4).
FIG. 4. The surface energy ratio (γsv/γlv) as a function of droplet wetting angle (β) to the hori-
zontal crystal facet. The dashed lines mark the lower and upper limit for having a droplet wetting
the top facet for an un-tapered (δ = 0◦) nanowire, with (green) and without (black) truncation.
The accompanied data (hexagons) are the experimental result from the in-situ microscopy in this
letter, measured both when a truncation is present (green) and not (black).
From the figure, we observe that the experimental observations of non-truncated inter-
7
faces (black) correlate with droplets having lower surface energy ratio (γsv/γlv) in comparison
to most of the cases where truncation is present (green). On the other hand, there is an
overlapping region for wetting angles above 120◦ where both truncated and non-truncated
droplet-nanowire interfaces occur for similar surface energy ratios for certain angles. This is
reasonable when taking into account that the interface is changing dynamically when form-
ing or removing a truncation, and that the droplet does not change significantly in volume
or shape within the 50 ms between each acquired image within the recording. Further, we
observed an increased probability of forming a truncation as the particle size increased. The
combination of experimental data and the stability model supports the idea that a trunca-
tion of the top facet could increase the stability for having a droplet wetting the top of a
nanowire.
In figure 4, we have fitted the solid-vapor surface energy of the nanowire side-facet
({1 0 1 0}) to 1.22 J/m2, which is to be compared with existing theoretical calculations
using unreconstructed surface (1.3 J/m2[35]) and density functional theory including sur-
face reconstruction and passivation (0.40< γvs,10¯10 <1.06 J/m2[36 -- 38]). For this value of the
surface energy, we find that most of the data points for the non-truncated interface (black
dots) fall below the predicted upper stability limit for this growth with a flat interface,
while most of the data for the truncated interface (green dots) fall above this upper limit,
and within the stability range for an interface with a truncation of 45◦. Changes of this
fitted surface energy (γsv) result in a vertical shift of the experimental data (plotted data),
but not the drawn stability limits (lines) as they depend on the geometrical orientation
of the capillary forces. Lowering the surface energy by 0.1 J/m2 will shift all data down
(0.08 units) and therefore also shift the data related to a truncation into the non-truncated
region and vice verse if increased. Fitting optimization and data for a fitted surface energy
of 1.22 ± 0.1 J/m2 are provided as supporting material for visual reference[29].
Using the solid-vapor surface energy as a fitting parameter for our data to the model,
we are able to compare the experimentally optimum surface energy with the theoretical
predictions made with different reconstructions and methods. Our fitted surface energy of
the nanowire sidewall of 1.22 J/m2 is close to the theoretical prediction for the energy of
the dangling bonds of the unreconstructed {1 0 1 0} GaAs surface (1.3 J/m2)[35]. Under the
condition that the liquid-solid interfaces are similar and that the edge energy is neglected,
8
we provide insight to the fundamental crystal surface property by combining theoretical
models and experimental data. While this is an experimental estimation, it is important to
note that the surface energy is a key factor for the nucleation theory of crystal growth[7, 22].
To further develop the theory behind crystal growth, it is of importance to narrow the large
interval of surface energies predicted by theoretical estimations (ranging from 0.4[36] to
1.3 J/m2[35]).
To conclude, we have theoretically assessed the droplet stability on the top of a nanowire
by addressing the possibility of forming a truncation of the droplet-nanowire interface.
Experimentally, we have demonstrated a stability increase, allowing for larger ratios be-
tween the surface tension and solid surface energy as an effect of forming a truncation.
By combining our model with in-situ TEM observations of Au-assisted growth of wurtzite
GaAs nanowires, we evaluated the surface energies involved and estimated γsl,000¯1 limited
by 0.6 J/m2 and γsv,10¯10 as 1.22 J/m2. This demonstrates that the combination of in-situ
growth observations and theoretical models is a powerful means to assess important mate-
rial parameters for which there are wide variances in theoretical calculations and limited
experimental validation.
Acknowledgement
The authors acknowledge financial support from the Knut and Alice Wallenberg Foun-
dation (KAW), NanoLund, and the Swedish Research Council (VR).
∗ [email protected]
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|
1708.05703 | 1 | 1708 | 2017-07-28T16:59:39 | A Compact, Wide Field-of-View Gradient-index Lens Antenna for Millimeter-wave MIMO on Mobile Devices | [
"physics.app-ph"
] | Lens-based beam-forming antennas offer a low-power, low-cost alternative to hybrid beamforming antenna arrays. They are ideally suited to millimeter-wave massive MIMO systems due to their native beam-space operation and angular selectivity and minimal dependence of high-speed data converters. We discuss the design of a compact and low-cost lens-based beam-forming antenna for small form-factor platforms such as small-cells and mobile devices in 5G wireless networks. We discuss a gradient-index design method and low-cost fabrication method based on perforated dielectrics. We discuss the need for high-contrast permittivity ranges to achieve wide scan angles which are essential for leveraging the full capability of massive MIMO systems (e.g., full stream capacity). Finally, we show that by using an appropriately designed perforated medium, gradient-index lenses with low minimum permittivity of 1.25 can achieve a maximum beam-steering angle of 44 degrees. We suggest that such an approach can enable practical low-loss, low-cost, and compact beam-steering lens antennas for millimeter-wave MIMO with wide beam-steering angles. | physics.app-ph | physics |
A Compact, Wide Field-of-View Gradient-index
Lens Antenna for Millimeter-wave MIMO on
Mobile Devices
Wenlong Bai and Jonathan Chisum
Electrical Engineering Department
University of Notre Dame
Notre Dame, IN 46556
Email: [email protected], [email protected]
Abstract-Lens-based beam-forming antennas offer a low-power,
low-cost alternative to hybrid beamforming antenna arrays. They
are ideally suited to millimeter-wave massive MIMO systems
due to their native beam-space operation and angular selectivity
and minimal dependence of high-speed data converters. We
discuss the design of a compact and low-cost lens-based beam-
forming antenna for small form-factor platforms such as small-
cells and mobile devices in 5G wireless networks. We discuss a
gradient-index design method and low-cost fabrication method
based on perforated dielectrics. We discuss the need for high-
contrast permittivity ranges to achieve wide scan angles which
are essential for leveraging the full capability of massive MIMO
systems (e.g., full stream capacity). Finally, we show that by
using an appropriately designed perforated medium, gradient-
index lenses with low minimum permittivity of 1.25 can achieve
a maximum beam-steering angle of 44 degrees. We suggest that
such an approach can enable practical low-loss, low-cost, and
compact beam-steering lens antennas for millimeter-wave MIMO
with wide beam-steering angles.
I.
INTRODUCTION
With the recently proposed FCC allocations for mobile wire-
less in the millimeter-wave (mmWave) bands, fifth generation
(5G) wireless communications now seems inevitable. The
move to mmWave brings with it the promise of wideband chan-
nels and almost unlimited spatial reuse [1]. However, to take
advantage of this underutilized spectrum several significant
challenges must be overcome. The dominant characteristic of
millimeter-wave propagation is increased path loss. To realize
a practical network under such constraints antenna arrays with
high gain, beam-steering, and massive MIMO processing have
been proposed [1], [2].
Traditional beam-steering approaches include digital base-
band beamforming, analog RF/LO beamforming, and hybrid
beamforming. While full digital beamforming offers the most
flexibility it requires a data-converter and RF transceiver on
every antenna element and is therefore prohibitive at 5G chan-
nel bandwidths[3]. Analog beamforming requires only a single
data-converter and transceiver but only has one stream. Hybrid
beamforming [4] has emerged as a compromise between digital
and analog beamforming–in an N−element antenna array,
M << N baseband data-converters can be combined with
N RF phase shifters to provide high performance beam-
steering, high-gain, and M independent data streams. However,
even hybrid beamforming has its limitations, namely cost,
power and sensitivity to analog impairments due to finite-
resolution, lossy mmWave phase shifters. In addition, signals
from multiple angles of arrival (AoA) are incident upon all
receive chains and so linearity requirements are increased.
One of the main motivations for moving to a large beam-
steering array is to leverage the benefits of massive MIMO
including high-gain and spatial multiplexing [5], [6]. Both
are native beam-space concepts and so lens antennas, fun-
damentally beam-space devices, have been proposed as ideal
apertures for mmWave MIMO [3]. The key advantage of lenses
is inherent angle-, or beam-space selectivity. With a single
RF chain a stream incident from any angle can be received
with high gain. Reception of a specific beam from an AoA
requires minimal processing and is realized in the completely
passive lens medium. With M RF chains, M independent
streams from M angles of arrival can be received. Due to
significant attenuation of multipath components, the typical
number of paths (and therefore approximately the number
of AoAs) in mmWave bands is L = 2− 8 [2] therefore a
lens antenna with 2-8 transceivers and data-converters can
capture all significant paths from any AoA up to the field
of view (FOV) of the antenna. In [3] it was noted that an
ideal lens antenna can achieve maximum MIMO capacity equal
to L times the channel capacity where L is the number of
spatial-multiplexed streams. A practical lens can approach this
value only if every spatial stream emitted by the transmitter is
intercepted by the receiver. Therefore, it is clear than any lens
antenna for mmWave MIMO applications should have a large
FOV to capture all L streams.
In this paper we present a beam-forming lens antenna with
wide FOV for use in small-form-factor platforms such as
small-cells and even mobile devices. The lens is designed
with transformation optics [7] and realized as a gradient index
(GRIN) lens using stacked layers of perforated dielectric as we
recently demonstrated in [8]. Because our process is based on
photolithography, etching is parallel and therefore arbitrarily
complex lenses can be fabricated for no additional cost and
with negligible effect on fabrication time. From start to finish,
each layer (wafer) of the GRIN lenses requires between 1-2
hours of etch time and since wafers are etched in batches, an
entire lens can be etched in the same amount of time.
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Figure 1. A flat lens antenna with switch-beam feed network provides a low-complexity millimeter-wave beam-steering antenna for inclusion in low-power,
low-cost small cells and mobile devices.
II. WIDE FIELD-OF-VIEW LENS CONCEPT
Figure 1 shows the lens antenna concept. The lens design is
based on a flat Luneburg lens (FLL) fabricated with a stack
of perforated silicon wafers. The FLL provides beam-steering
by directing the RF signal to a particular feed element. The
feed element (x, y) location dictates the beams (θ, φ). The feed
network is driven by an RF stream (single stream shown for
clarity) through a matrix of solid-state switches. Importantly,
mmWave switches are simpler to realize,
lower loss, and
require less power than variable phase shifters. Note that the
switch matrix is only shown for concept clarity and is not the
focus of this paper.
The FLL is designed with transformation optics [7]. Transfor-
mation optics (TO) is means of mapping a spatial distortion
into a transformation of the material constitutive parameters
(permittivity, r and permeability, µr). While a discussion of
TO is beyond the scope of this report we summarize the
approach: i) a coordinate transformation from physical space,
(x, y, z) to virtual space (x′, y′, z′) is defined, ii) the trans-
formation is used to modify the permittivity and permeability
tensors of an original design, and iii) the result is a spatial map
of r and µr which realize the functionality of the original
structure in the physically transformed device.
We now apply this process to the Luneburg lens which is a
spherical lens whose permittivity varies from r = 2 at the
center of the lens to r= 1 at the surface as shown in Fig. 2a.
r=2− x2+ y2
R2 ⋅ eye(3, 3)
(a) Config. 1
(b) Config. 2
Figure 2.
(a) Permittivity map for the original Luneburg lens. (b) Permittivity
map for the flat Luneburg lens. Both lenses have a radius of 23.1 mm
corresponding to three wavelengths at the design frequency of 39 GHz and
each unit cell is 0.72mm× 0.72mm.
axis:
′= x
′=(δ× y)~(R2− x2)
′= z.
x
y
z
(2)
(3)
(4)
Computing the Jacobian transfer matrix, J, for the above co-
ordinate transformation, we can compute the primed material:
′
,
(5)
which can be presented in terms of the original coordinates as
shown in (6) and (7):
det J
′
r= JrJ
rzz=−√
R2− x2
R2 − 2
x2+y2
δ
′
rxx=
ryyá 1
′
′
(1)
(6)
(7)
The spherical lens is converted to a cylinder with a compres-
sion ratio, δ, which is introduced to compress the vertical, y,
The resulting permittivity map is shown in Fig. 2b, from which
we can see the length of the lens remains the same while
the width is squeezed to δ. The permittivity distribution looks
similar but is compressed. The electrical thickness must be
much greater in the squeezed direction, which results in a
maximum permittivity of 2~δ. In our design shown in Fig. 2b,
the maximum permittivity corresponds to rmax = 12 at the
center with a squeeze ratio of 1~6. The minimum permittivity
is still rmin= 1 at the edges.
The lens design is now fully prescribed in Fig 2b and we turn
to the task of fabrication. By realizing the permittivity gradient
with a perforated silicon dielectric, an effective permittivity can
ideally range from 1 to 11.8. In the original work on perforated
dielectrics [9] the medium was mechanically drilled to make
circular voids on a square lattice (indicated with "Squ", see
Fig. 3c) and circular voids on a triangular lattice (indicated with
"Tri", see Fig. 3b) in a background dielectric. The effective
permittivity of a perforated dielectric can be approximated as
eff= r(1− α)+ α,
(8)
2
3
where r is the relative permittivity of the background dielec-
tric and α is the filling factor equal to the ratio of the void
area to the unit-cell area. For circular unit-cells on square and
triangle lattices the minimum fill factor is equal to π
4 and
, respectively. Recall that the permittivity map contains
π
minimum permittivity close to 1.0 is crucial for wide angle
beam-steering of the lens. If the background permittivity
the corresponding minimum
effective permittivity of the "Squ" and "Tri" configurations
are 3.3 (28% of the background permittivity) and 2.0 (17% of
the background permittivity) respectively, which significantly
limits the fabrication of many TO designs.
√
unit-cells with r= 1.0. We will show, later, that achieving a
is that of silicon, r = 11.8,
In order to approach rmin = 1.0 we have proposed the
use of n−gon voids on matched lattices and demonstrated
permittivities as low as r= 1.25, or 10% of the background
their feasibility [8]. Figure 3a shows a hexagonal void on a
hexagonal lattice. Theoretically the minimum permittivity can
approach 1.0 as the volume of unetched dielectric becomes
asymptotically small. We have fabricated silicon wafers with
permittivity. Figure 4 shows square, triangular, and hexagonal
unit-cells on matched lattices. These structures were examined
for robustness to manufacture and for their ability to exhibit a
minimum permittivity. Features are exposed on an undoped
silicon wafer with a diameter of 25.4mm and a thickness
of 270µm. Etching is performed with a Bosch process. The
resulting permittivities are shown in Fig. 5 where the minimum
permittivity value for the triangle structure is 1.25 which agrees
with the the permittivity map constraints discussed above.
Current Bosch etches exhibit significant undercut; fixing this
problem will improve etch control.
(a) Hex
(b) Tri
(c) Squ
Figure 3. Various perforated dielectric unit cells are compared. (a) A matched
n-gon perforation and lattice (here a hexagonal void and lattice). (b) A circular
perforation on a triangular lattice. (c) A circular perforation on a square lattice.
Figure 4.
From [8]: Hexagonal, square, and triangular perforations with
characteristic dimension 175µm, 100µm, and 25µm as seen with backlight
at 10x magnification. All perforations are on a regular 200µm lattice in bulk
silicon.
of 28%, 17%, and 10% of the background permittivity for
the "Squ", "Tri", and "Hex" configurations respectively. For a
silicon background of r = 11.8, the minimum permittivities
base lens material of silicon (r= 11.8), and two potentially
higher permittivities of r = 20 and r = 50 (corresponding
are 3.3, 2.0, and 1.25. Now truncating the permittivity map
from Fig. 2b with these values we can count the percentage
of unit-cells that are effected by the fabrication limitations
as summarized in Table I. The background r corresponds to
III. WIDE-ANGLE BEAM-STEERING OF REALISTIC
LENSES
In this section we use Ansys HFSS to explore the performance
limitations of such a beam-steering lens antenna under the
above fabrication limitations. Our objective is to determine the
importance of permittivity range and in particular minimum
effective permittivity to achieve wide angle beam-steering.
If we constrain our fabrication to the three unit-cell structures
shown in Fig. 3 we will be limited to minimum permittivities
Figure 5.
size.
From [8]: Average permittivity of each geometry at each feature
00.20.40.60.81Fill factor, (cid:1)meas024681012Effective permittivty, (cid:2)effTriangleHexagonSquareEquation 8 Background r
r= 11.8(Si)
r= 20
r= 50
(rmin= 0.28r)
Square lattice
12.29
12.7
12.67
Triangle lattice
(0.17r)
5
5.164
5.16
Hexagon lattice
(0.10r)
2.02
1.844
1.84
Table I.
PERCENTAGE OF UNIT CELLS LOWER THAN THE FABRICATION
LIMIT FOR DIFFERENT LATTICE STRUCTURES
to lens compression ratios of 6, 10 and 25, respectively).
Table I shows that for a silicon lens on a square lattice where
the minimum fabricated permittivity is rmin= 0.28r= 3.3,
minimum fabricated permittivity of rmin = 0.10r = 1.25,
12% of the unit cells in the idea design will have required
permittivities below that of the fabrication limit. However,
the same lens fabricated on a hexagonal lattice can realize a
resulting in only 2% of prescribed cells being below the
minimum fabrication limit. Lenses fabricated with a fewer
number of prescribed cells below the fabrication limit will
more faithfully realize the desired lens response. Table I shows
that unit-cell structure while not thickness is the more impor-
tant consideration for realizing the designed permittivity map.
Figure 6 shows half of the final
lens used for full-wave
electromagnetic simulations. It is a rotational extrusion of the
truncated permittivity maps. The lens is comprised of a 64×10
array of unit-cells of size 720µm× 720µm. The lens diameter
at 39GHz. The associated thickness is 0.94λ= 7.2mm. The
is equal to 6λ where λ is 7.7mm, the free-space wavelength
focal point is 7.7mm which is almost identical to that of the
typical Luneburg lens.
Figure 6. Model for electromagnetic simulations.
Figure 7 shows the maximum beam steering angle versus
feed location for the silicon lens fabricated with "Squ" and
"Hex" unit-cell configurations with minimum permittivity of
3.3 and 1.25, respectively. At shallow scan angles the two
lenses perform identically because the majority of the energy
propagates throughout the center of the lens where permittivity
is much higher than rmin. However, as beam scan angle
increases the "Hex" unit-cell with rmin = 1.25 outperforms
the "Squ" unit-cell. This is because as scan angle increases the
edge of the lens plays a more prominent role in beam-steering
and the edge of the lens contains the lower permittivity unit-
cells.
IV. CONCLUSION
In this paper, we present a way to design lens antennas
by transformation optics. We have shown that by using an
n−gon void on a matched lattice we can achieve a minimum
permittivity of 1.25 which yields a maximum beam-steering
angle of 44 degrees. This technology is a promising candidate
for enabling practical low-loss, low-cost and compact beam-
steering lens antennas for mmWave MIMO with wide beam-
steering angles.
Figure 7. Maximum steered angle versus feed location for lenses with
minimum r of 1.25 and 3.3, respectively
REFERENCES
[1] S. Hur, T. Kim, D. J. Love, J. V. Krogmeier, T. A. Thomas, and A. Ghosh,
"Millimeter wave beamforming for wireless backhaul and access in small
cell networks," IEEE Transactions on Communications, vol. 61, no. 10,
pp. 4391–4403, October 2013.
[2] T. S. Rappaport, S. Sun, R. Mayzus, H. Zhao, Y. Azar, K. Wang, G. N.
Wong, J. K. Schulz, M. Samimi, and F. Gutierrez, "Millimeter wave
mobile communications for 5g cellular: It will work!" IEEE Access,
vol. 1, pp. 335–349, 2013.
[3] Y. Zeng and R. Zhang, "Millimeter wave mimo with lens antenna array:
A new path division multiplexing paradigm," IEEE Transactions on
Communications, vol. 64, no. 4, pp. 1557–1571, April 2016.
[4] A. Alkhateeb, J. Mo, N. Gonzalez-Prelcic, and R. W. Heath, "Mimo
precoding and combining solutions for millimeter-wave systems," IEEE
Communications Magazine, vol. 52, no. 12, pp. 122–131, December
2014.
[5]
J. Hogan and A. Sayeed, "Beam selection for performance-complexity
optimization in high-dimensional mimo systems," in 2016 Annual Con-
ference on Information Science and Systems (CISS), March 2016, pp.
337–342.
[6] E. G. Larsson, O. Edfors, F. Tufvesson, and T. L. Marzetta, "Massive
mimo for next generation wireless systems," IEEE Communications
Magazine, vol. 52, no. 2, pp. 186–195, February 2014.
[7] D. H. Kwon and D. H. Werner, "Transformation electromagnetics: An
overview of the theory and applications," IEEE Antennas and Propaga-
tion Magazine, vol. 52, no. 1, pp. 24–46, Feb 2010.
[8] N. Garcia, W. Bai, T. Twahirwa, D. Connelly, and J. Chisum, "Silicon
micromachined high-contrast artificial dielectrics for millimeter-wave
transformation optics antennas," in to be presented at the 2017 IEEE
International Symposium on Antennas and Propagation (APSURSI), July
2017.
[9] A. Petosa and A. Ittipiboon, "Design and performance of a perforated
dielectric fresnel lens," IEE Proceedings - Microwaves, Antennas and
Propagation, vol. 141, no. 5, pp. 309–, Oct 1994.
00.10.20.30.40.50.6feed location(x/)0510152025303540Maximum Beam Angel(degrees)r-min=1.25r-min=3.3 |
1802.02105 | 1 | 1802 | 2018-02-03T02:37:32 | Electrokinetic Energy Harvesting using Paper and Pencil | [
"physics.app-ph"
] | We exploit the combinatorial advantage of electrokinetics and tortutosity of cellulose-based paper network on a laboratory grade filter paper for the development of a simple, inexpensive, yet extremely robust (shows constant performance till 12 days) paper-and-pencil-based device for energy harvesting application. We successfully achieve to harvest maximum output power of 640 pW in single channel, while the same is significantly improved (by about 100 times) with the use of multichannel microfluidic array (maximum up to 20 channels). We envisage that such ultra-low cost devices may turn out to be extremely useful in energizing analytical microdevices in resource limited settings, for instance for extreme point of care diagnostics applications. | physics.app-ph | physics | Electrokinetic Energy Harvesting using Paper and Pencil
Sankha Shuvra Dasa, Shantimoy Karb, Tarique Anwara, Partha Sahaa and Suman Chakrabortyab*
aDepartment of Mechanical Engineering, Indian Institute of Technology Kharagpur, Kharagpur 721302, India.
bAdvanced Technology Development Centre, Indian Institute of Technology Kharagpur, Kharagpur 721302, India.
*email: [email protected]
We exploit the combinatorial advantage of electrokinetics and tortutosity of cellulose-based paper network on a laboratory grade filter
paper for the development of a simple, inexpensive, yet extremely robust (shows constant performance till 12 days) 'paper-and-pencil'-
based device for energy harvesting application. We successfully achieve to harvest maximum output power of ~ 640 pW in single
channel, while the same is significantly improved (by ~ 100 times) with the use of multichannel microfluidic array (maximum up to 20
channels). We envisage that such ultra-low cost devices may turn out to be extremely useful in energizing analytical microdevices in
resource limited settings, for instance for extreme point of care diagnostics applications.
Introduction
Throughout the last decade, paper-based microfluidics caught significant attention for myriad of applications1–3, ranging from
disease diagnostics4–6, water quality control7, food quality monitoring8 to heavy metal ion detection9 . Recent studies show that
paper-based microfluidic devices may also be used for probing fundamental phenomena like micro-mixing10, electro-wetting11,
digital microfluidics12 etc. In most of the scenarios, paper-based devices have been utilized for qualitative/semi-quantitative
purposes and have been preferred because of their frugality, disposability, and easy manufacturing13. In recent years, paper-based
devices have also been found suitable for energy storage applications e.g. flexible electronics, development of fuel cells etc14–18.
Miniaturization of various bio-electronics and microfluidic-based lab-on-chip devices has essentially demanded an integrated
power source for powering those micro-chips19. Towards this end, realizing an alternate source of green energy generation for
these microfluidic chips is certainly one of the key concerns. To achieve this feat, many different mechanisms like solar cells20,
dye sensitized solar cells (DSSCs)21, bio-mass conversion22, microbial energy harvesting23 etc. are extensively explored. Despite
the inherent advantages of the aforesaid processes, all the underlying principles have certain limitations. In parallel, electrokinetic
energy conversion mechanisms, mediated by the establishment of a streaming potential (i.e. the potential generated due to the
continuous transport of electrolytes), has of late emerged to be as effective alternative24. Recent studies have successfully
demonstrated the application of this paradigm, albeit in a sophistically controllable laboratory environment that cannot possibly
be replicated for catering the functionalities of point of care devices in resource-limited settings25–30. In addition, the reported
devices on electrokinetic energy conversion necessitate elaborate device fabrication, expensive consumables and trained
personnel. Furthermore, these devices not only demand very intricate operational module, but also do not inherently integrate
with low cost analytical platforms (such as paper strips); which eventually makes the entire paradigm expensive31.
Comprehensive literature review shows that recent endeavors have been directed towards facilitating on-chip power generation.
Meng et al. illustrated the concept of electrochemically induced CO2 bubble driven liquid fuel cell which seems to be useful for
continuous fluid flow32. However, the associated fabrication difficulties and poor performance of the electrode restricts its
utilitarian scope for continuous power generation. Arun et al. have demonstrated the usage of 'paper-and-pencil' based fuel cells
for sustained period of power generation33. In such a system, graphite electrodes trap atmospheric oxygen and thus act as an
internal source of oxygen. However, the process uses formic acid as a fuel and sulfuric acid as an oxidant which confine the
scope of the device. Furthermore, performance enhancement of such devices (like microfluidic battery, triboelectric
nanogenerators) requires a coating of different materials; hence, the efficiency is often constrained by the thickness of the
adsorbed material34–38.
In this work, we explore electrokinetics on a simple 'paper-and-pencil' based platform (shown in Figure 1) as a greener
alternative for on-chip energy harvesting. The primary advantages of such a platform are the self-propelling nature of the input
flow through an exploitation of intrinsic capillary transport in paper pores (to this end, no syringe pump or equivalent actuation is
necessary), and an explicit integrability with paper based diagnostic platforms for point of care applications. These features
empower the device with a favourable functionality in extremely challenging and resource limited settings in an ultra-low cost
paradigm. As a consequence, the intrinsic porous capillaries in the paper structure drive a surface tension driven flow that induces
ionic convection necessary for the establishment of an electrical potential across the device, resulting in a favourable direct
exploitation and conversion of surface energy into electrical power.
We use standard laboratory grade filter paper (whatmann grade 1). We achieve to successfully harvest power of ~ 640 pW in
single channel; which is further improved by O (~) 102 by connecting multiple channels (maximum up to 20 channels) through
series connection. Our approach delineates a frugal, efficient and yet extremely robust platform for energy harvesting for
sustained duration (up to 12 days) without requiring any sophisticated laboratory environment.
Experimental details
Chemicals
Potassium chloride (Merck Life Science Private Ltd.) and Whatman cellulose filter paper (GE Healthcare, UK) of grade 1 are
used for the experimentation. Electrolyte solutions are prepared by mixing KCl in Milli Q deionized water (18MΩ cm).
Device fabrication
Paper channels are fabricated using photolithography technique similar to the process demonstrated by Mandal et al39
(schematically delineated in Figure S1; see ESI). Hydrophobic coating of the paper leads to the blockage (evident from Figure
S2; see ESI) of the paper pores and therefore the fabricated hydrophobic barrier guides the fluid transportation in definite
direction. To fabricate the graphite electrodes, reservoir pads are sketched using HB pencil (Figure S2 in ESI). Silver wire (Sigma
Aldrich: ≥99.99% trace metal basis, 1.59 μΩ-cm at 20°C) of ~250 µm diameter is attached to the pencil sketched electrodes using
conductive silver paste (Alfa Aesar) for the measurement of the potential. To measure the streaming potential, Keithley 2182A
nanovoltmeter is connected in parallel with the electrodes. Following the analogy of electrokinetics (i.e. the migration of counter
ions in downstream direction), higher end of the nanovoltmeter probe is connected to downstream electrode (outlet reservoir pad)
and the lower end is connected to the upstream electrode (inlet reservoir pad). In order to acquire the data continuously from
nanovoltmeter, we use an in-house lab-view code. Details of the experimental and data measurement setup are schematically
delineated in Figure 2. We use 1 mM KCl solution as the electrolyte throughout the entire course of investigation (for details see
Figure S3 in ESI). To eradicate the effect of evaporation, uniform experimental condition (relative humidity: 50%, temperature:
22-240C) is maintained throughout the course of study.
Figure 1: 'Paper-and-pencil'-based device used for streaming potential measurement. Device dimensions are
1 mm wide, 5 mm long with square inlet and outlet reservoir pads of 6mm × 6mm dimensions.
Paper channel (hydrophilic)
Graphite electrode
Silver wire
Equivalent electrical circuit
We exploit an analogy of equivalent electrical connection (shown in Figure 3) for continuous measurement of streaming potential
and output power. Paper channel (i.e. the hydrophilic part of the device) consists of numbers of micropores which can be
assumed as an array of microchannels. We connect a nanovoltmeter in parallel with the electrodes to measure the open circuit
LR ) is connected in parallel to the circuit to measure the respective close circuit
potential. Further, an external resistance (
.
R
potential. Inherent presence of the capillary force drives the electrolyte solution to the downstream direction through the
micropores with resistance micropore
strI
Figure 2: Schematic representation of the experimental setup for measuring streaming potential on 'paper-
and-pencil' platform. Inset shows the inside view of Faraday box with manual dispensing of KCl solution
on loading pad of the channel.
is the streaming current that is being generated due to the advection of ions which develops an electrical field due to ion
. The
cI acting opposite to strI
transportation and is known as streaming potential. This, in turn, induces the conduction current,
open circuit streaming potential can be calculated as40:
=
(1)
−
(
Z I
V
∆
stro
)
I R
c
micropore
str
where Z is the number of micropores within the channel area. However, in case of close circuit condition it can be calculated as,
ΔVstr
Outlet
RL
Iext
Istr
Ic
Rmicropore(1)
Rmicropore(2)
Rmicropore(3)
Rmicropore(n)
Array of Micro-pores
Inlet
Flow direction
Figure 3: Schematic of equivalent electrical circuit used for streaming
potential and output power measurement.
V
∆
strc
and
=
I
ext
I R
L
ext
(
Z I
=
)
c
Now, the output power (
I
−
str
outputP
(2)
(3)
) can be calculated using the following formula:
P
output
(
=
V
∆
strc
R
L
2
)
Results and discussions
(4).
Temporal variation of the induced open circuit potential is shown in Figure 4. Initial fluctuations can be ascribed to the fact of
incomplete circuit (i.e. fluid is yet to reach to the outlet reservoir pad). Once the fluid makes contact with the outlet reservoir
electrode, there is a sharp rise in the measured potential and thereafter it gradually decreases before it reaches a plateau regime.
Fundamental understanding about the microscopic structures of the paper and subsequent flow characteristics through such
tortuous network is essential to explain the observed behavior of the streaming potential. Overall flow mechanism through paper-
based microfluidic devices is fundamentally different from other conventional microfluidic platforms (glass, silicon, PDMS-
based platforms). Due to the presence of inherent capillary action, fluid imbibes through the porous network of the paper matrix,
not flowing on top of the surface. Paper is composed of enormous number of cellulose fabrics which are randomly distributed
over the entire surface. Due to the presence of free carboxylic acid and hydroxyl groups, cellulose fibres are known to have free
negative charges on its surface in contact with KCl solution, which is confirmed by the measured zeta potential (-8.76 ± 0.7813
mV)41.
Therefore, due to the generation electrical double layer (EDL) on cellulose fabrics (effect of electrolyte's concentration is
illustrated in Figure S3, please see ESI), there will be surplus of the counter ions in the downstream part of the channel (i.e.
towards the direction of flow) which essentially leads to the generation of streaming potential across the two ends of the device
(schematically shown in Figure 5). Interestingly, this occurs at virtually no expense, since the intrinsic porous capillaries in the
paper structure essentially drive a surface tension driven flow that induces the advective transport of the ionic species for the
establishment of the streaming potential, and no external pumping mechanism such as the syringe pump becomes necessary.
Furthermore, the induced potential is certainly to be highest at the very initial phase i.e. when the circuit completes the
connection for the first time and thereafter the potential drop is gradually decreasing. From Figure 4, it is clearly understood that
at the very initial phase, the highest potential is measured which is continuously decreased with time and finally being stable for
more than 2 hours; which indicates the fact that there is no more significant transportation of ions in macroscopic scale (i.e. in
microscopic scale, ions are migrating in equivalent rate in almost all possible directions).
(a)
(b)
Figure 4: Temporal measurement of induced open circuit streaming potential for 1mM KCl solution in (a) three different channel, (b) same
channel for six consecutive runs [insets show the maximum open circuit potential in each run].
From Figure 4a, it can be inferred that the reproducibility of the measured results differs in different channels which can be
accounted from the random distribution of the cellulose fabrics on the paper matrix. In Figure 4b, experimental reproducibility on
the same channel is presented. Initial priming with KCl solution certainly decreases (as the micropores have already developed
EDL) the initial fluctuation, whilst similar trend is observed for sustained period of measurement.
Figure 5: Schematic of the streaming potential generation on cellulose fibres (zoomed view: cellulose threads have –OH
and –COOH functionality). Arrows indicate the direction of flow.
(a)
(b)
Figure 6: (a) Cyclic test to investigate the performance of the paper channel with time and (b) variation of output power with
respect to different load resistances (connected parallel to the circuit).
Following the results illustrated in Figure 4, it is clearly evident that the random distribution of cellulose network imparts
some degree of fluctuation in measurements (particularly for longer period of the experiments). In this context, one obvious
concern arises what is the life span of the device? To address this particular concern, we pay attention to understand the life cycle
of the device. We perform a cyclic test which consists of 12 hours continuous measurement followed by ~10-12 hours of drying
of the channel prior to the next cycle. The KCl solution (~50µl) is dispensed on the loading pad at an interval of one hour. From
Figure 6a, three distinct regimes are observed. Regime 1 (R1) indicates the constant increase of performance rate of the device till
~60 hours, whereas the R2 indicates almost constant performance rate till ~100-110 hours; in R3 delineates attenuation of
(measured open circuit potential) obtained as ~ -190mV at ~90 hours. So, it
performance rate after 110 hours. The highest
is important to note here that the device performance remains same even after ~140 hours of continuous operation; which is
certainly an additional benefit for long term applications.
stroV∆
To measure the closed circuit potential, an external load (
output power agaisnt different load resistance is delineated in Fig 6b. The maximum output power for single channel is measured
to be ~ 640 pW for the external resistance of 10 MΩ.
LR ) is connected in parallel to the circuit. The variation of calculated
(a)
(b)
Figure 7: Variation of (a) open circuit potential for multichannel array shows the increase of open circuit potential as the number of
channels in array is increasing from 1 to 5 to 10 to 20, (inset shows how the output power differs against different external load for 20
channels); and (b) temporal evolution of output power with respect to optimum external load resistance for multichannel array (inset
indicates that at initial time points measured output power is higher while at later phase (~after 1 hour) it stabilizes to a constant potential
value.
stroV∆
To further improve the output power, we connect the multiple channels (maximum up to 20 channels) through series connection
(Figure S4 in ESI shows 5 channels; while the supplementary video shows a detailed measurement setup). Figure 7a shows that
the maximum
observed is ~ 100mV for single channel, ~ 482mV for 5 channels, ~ 862mV for 10 channels and ~ 2.1V
while 20 channels are in series connection. In order to understand the device performance, the output power for single channel as
well as for different channel combinations against different external loads is measured (depicted in Figure S5, see ESI). From this
is seen against 10 MΩ , whereas it is against 20
device optimization study, it is seen that for single channel maximum Output
MΩ , 40 MΩ and 80 MΩ for channel combination 5, 10, and 20 respectively. The temporal evolution of the output power for
single channel and multiple channels (measured against the specific external load for which it shows maximum power) is seen to
be almost constant as seen in Figure 7(b) for a period of 4 hours. Moreover, the device performance is seemed to be excellent till
12 days of measurements (see ESI, Figure S6); which indicates the robustness of the device.
P
Conclusions
In summary, a simple and frugal 'paper-and-pencil' based microfluidic array (on normal laboratory grade filter paper) has
been demonstrated to be an efficient energy harvesting platform, having an inherent integrability with a corresponding analytical
component (such as point of care diagnostics) of the same platform in an ultra-low cost paradigm. This virtually necessitates no
input power that makes it potentially effective in challenging environments for point of care applications as hallmarked by
resource-limited settings. The device essentially demonstrates a conceptualization of electrokinetics (streaming potential) in a
paper based microfluidic platform, aided by an intrinsic surface tension driven connective transport of the ionic species through
the porous network of the paper matrix. The device with single channel can develop maximum output power of ~640pW against
external load of 10MΩ, whilst the maximum open circuit potential is observed ~190mV. Multi-channel microfluidic arrays
implemented on the same platform show substantial improvement in the measured output power (enhanced up to ~50nW by
connecting 20 channels in series, for demonstration). Moreover, we perform comprehensive study to understand the optimized
stroV∆
performance and robustness of the device. Cyclic test of the device revealed that
as well as the efficiency increases with the
number of usages of the device and shows almost constant efficiency up to 12 days.
We envisage that these simple power generation platforms will find its application in the development of green battery, can
further be integrated power source for MEMS based low powering devices, and for self-powering paper-based medical diagnostic
platforms that hold the potential of revolutionizing the implementation of point of care diagnostics in resource limited settings.
Acknowledgements
The authors would like to acknowledge Sponsored Research and Industrial Consultancy (SRIC) cell, IIT Kharagpur for the
financial support to the 'Plant on-a-Chip' project provided through the SGDRI grant.
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Electronic Supplementary Information (ESI)
'Electrokinetic Energy Harvesting using Paper and Pencil'
Sankha Shuvra Dasa, Shantimoy Karb, Tarique Anwara, Partha Sahaa and Suman Chakrabortyab*
1Department of Mechanical Engineering, Indian Institute of Technology Kharagpur, Kharagpur 721302, India.
2Advanced Technology Development Centre, Indian Institute of Technology Kharagpur, Kharagpur 721302, India.
email: [email protected]
1. Fabrication details
Whatman filter paper (laboratory grade 1; mean pore diameter ~11µm and thickness ~100µm) are used for
our study. Initially, the filter paper was soaked homogeneously in negative photoresist (SU-8 10; MicroChem) for 2-
3 minutes. The excess photoresist was squeezed out from the paper to ensure uniform spreading throughout the
paper. Thereafter, the photoresist soaked paper was prebaked at 130°C for ~10 minutes to evaporate the excess
solvent. In the subsequent steps, the paper was cooled to room temperature and exposed under UV radiation
(λ~365nm) at 100 mW/cm2 for 20 seconds through a positive mask using mask aligner (OAI Hybralign 2000 series).
UV-exposed paper is further post-baked at 130°C for ~10 minutes followed by soaking in acetone for ~2 minutes
(for development) and rinsed in Isopropanol. Finally, the developed channel was dried at 75°-80°C for ~30 minutes.
Figure S1: Schematic representation of fabrication of the paper microchannel.
2. Fabrication of pencil-sketched graphite electrodes:
Photoresist
washed from
paper pores
Paper pores filled
with photoresist
Figure S2: Schematic representation of electrode fabrication (pencil was sketched on front side of the paper
surface) and scanning electron micrographs of the fabricated paper device. Half of the reservoir pads were kept
free of graphite for the ease of fluid transportation.
3. Effect of electrolyte concentration
The thickness of electrical double layer (EDL) is known to vary with the concentration of
electrolyte solution1,2. Therefore, we investigate the effect of electrolyte concentration to explore the effect
of EDL on induced streaming potential on the 'paper-and-pencil'-based platforms.
The induced potential for 10mM and 100mM KCl solution is ~ -25mV and ~ -5mV respectively.
Thus the induced streaming potential for 10mM and 100mM KCl solution is 4 times and 20 times less than
as compared to 1mM KCl solution (~ -100mV) respectively. Hence, we chose 1mM KCl as the working
electrolyte for our experimentations.
Figure S3: Temporal variation of induced open circuit streaming potential for 10mM and 100mM KCl solution.
4. Multichannel microfluidic array
Connected with high end of
Nanovoltmeter probe
Connected with low end of
Nanovoltmeter probe
Figure S4: Series connection of multiple channels (for 5 channels).
5. Measurement of device performance against external loads
Figure S5: Variation of output power against different load resistance values for different channels.
6. Device performance in different days
Figure S6: Variation of streaming potential for experiment conducted in different days (for same
device with dispensing of electrolyte solution in each ~1 hours; for single channel).
References:
1
2
F. H. J. Van Der Heyden, D. Stein and C. Dekker, Phys. Rev. Lett., 2005, 95, 9–12.
F. H. J. Van Der Heyden, D. J. Bonthuis, D. Stein, C. Meyer and C. Dekker, Nano Lett., 2007, 7, 1022–
1025.
|
1907.01780 | 1 | 1907 | 2019-07-03T07:50:37 | Effects of Al content on the oxygen permeability through dual-phase membrane 60Ce$_{0.9}$Pr$_{0.1}$O$_{2-\delta}$-40Pr$_{0.6}$Sr$_{0.4}$Fe$_{1-x}$Al$_x$O$_{3-\delta}$ | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | Ceramic dual-phase oxygen transport membranes with the composition of 60wt.% Ce0.9Pr0.1O2-{\delta}-40wt.%Pr0.6Sr0.4Fe1-xAlxO3-{\delta} (x = 0.05, 0.1, 0.2, 0.3, 0.4, 0.6, 0.8, 1.0) (60CPO-40PSF1-xAxO) based on 60Ce0.9Pr0.1O2-{\delta}-40Pr0.6Sr0.4FeO3-{\delta} doped Al was successfully synthesized through a modified Pechini method. Crystal structure, surface microtopography and oxygen permeability are investigated systematically. The cell parameters of perovskite phase first increased and then decreased with the increase of Al content, which is related to the radius of the Al3+ and the formation of impurity phase. As x ranges from 0.1 to 0.8, the oxygen permeability of the materials first increases and then decreases, and the maximum value of oxygen permeation rate for 60CPO-40PSF1-xAxO membranes with 0.4mm thickness at 1000 {\deg}C is 1.12 mL min-1 cm-2 when x = 0.4. XRD measurements revealed high temperature stability and CO2-tolerant property of the dual-phase composites. The partial replacement of Fe$^{3+}$/Fe$^{4+}$ by Al$^{3+}$ causes the material not only to exhibit good stability, but also to increase the oxygen permeability of the membranes. | physics.app-ph | physics | Effects of Al content on the oxygen permeability through dual-phase
membrane 60Ce0.9Pr0.1O2-δ-40Pr0.6Sr0.4Fe1-xAlxO3-δ
Lei Shia, Shu Wanga, Tianni Lub, Yuan Hea, Dong Yana, Qi Lana, Zhiang Xiea, Haoqi
Wanga, Mebrouka Boubechea, Huixia Luoa*
aSchool of Material Science and Engineering and Key Lab Polymer Composite &
Functional Materials, Sun Yat-Sen University, No. 135, Xingang Xi Road,
Guangzhou, 510275, P. R. China
bSchool of Materials Sciences and Engineering, Shenyang Aerospace Unversity,
Shenyang, 110136, P. R. China
*Corresponding author/authors complete details (Telephone; E-mail:) (+0086)-
2039386124
[email protected]
Abstract graphic:
ABSTRACT:
Ceramic dual-phase oxygen transport membranes with the composition of 60wt.%
Ce0.9Pr0.1O2-δ-40wt.%Pr0.6Sr0.4Fe1-xAlxO3-δ (x = 0.05, 0.1, 0.2, 0.3, 0.4, 0.6, 0.8, 1.0)
(60CPO-40PSF1-xAxO) based on 60Ce0.9Pr0.1O2-δ-40Pr0.6Sr0.4FeO3-δ doped Al was
successfully synthesized through a modified Pechini method. Crystal structure, surface
microtopography and oxygen permeability are investigated systematically. The cell
parameters of perovskite phase first increased and then decreased with the increase of
Al content, which is related to the radius of the Al3+ and the formation of impurity phase.
As x ranges from 0.1 to 0.8, the oxygen permeability of the materials first increases and
then decreases, and the maximum value of oxygen permeation rate for 60CPO-40PSF1-
xAxO membranes with 0.4mm thickness at 1000 °C is 1.12 mL min-1 cm-2 when x = 0.4.
XRD measurements revealed high temperature stability and CO2-tolerant property of
the dual-phase composites. The partial replacement of Fe3+/Fe4+ by Al3+ causes the
material not only to exhibit good stability, but also to increase the oxygen permeability
of the membranes.
Keywords: Ceramic composite; Oxygen separation; Mixed ionic-electronic conductor;
Al-containing membrane; Modified Pechini method
Introduction
Ceramic composites containing mixed ionic-electronic conductivity (MIEC) have
received extensive interests due to their attractive prospects in high-temperature
electrochemical applications, such as cathodes of solid oxide fuel cells (SOFC), dense
inorganic membranes for pure oxygen preparation, and chemical membrane reactors.[1-
8] In addition, since the potential application of MIEC oxygen transport membranes
(OTMs) in oxy-fuel combustion can significantly reduce CO2 and toxic NOx emissions
in power stations, the environmentally friendly ceramic membrane technology has
become a new hotspot for researchers.[9-11] However, this technology puts forward
two basic requirements for ceramic membrane materials: (1) it must possess as high as
possible oxygen permeability; (2) it must have an excellent stability in a wide range of
oxygen concentration and temperature.[12,13]
It has been previously established
that
single perovskite OTMs
(e.g.
Ba0.5Sr0.5Co0.8Fe0.2O3-δ, La0.6Sr0.4Co0.2Fe0.8O3-δ) have high oxygen permeability, but
exhibit limited stability under large oxygen chemical potential gradients.[14-18] To
improve stability of single perovskite MIEC OTMs, the researchers replaced the Co of
perovskite in the B-site with metal cations with more stable oxidation state such as Al,
Zr, and Ti, etc.[19-21] As an economical and environmentally friendly material,
aluminum is especially widely used in the B-site doped perovskite oxides. For example,
Holc et al. studied La0.8Sr0.2Fe1-xAlxO3-δ and suggested that La0.8Sr0.2Fe0.7Al0.3O3-δ
(LSFA) could be a candidate for intermediate-temperature SOFC in view of LSFA's
excellent stability.[20] Jiang et al. reported a novel cobalt-free BaFe0.9Zr0.05Al0.05O3-δ
OTM reactor coupled with nitrous oxide decomposition methane and carbon dioxide
reforming.[22] It has become an indisputable fact that the doping of Al can improve the
structure stability of the perovskite OTMs, but the effect of Al doping on the oxygen
permeability of the OTMs is still controversial. Some studies have found that the doping
of Al significantly decreased the oxygen permeability, which can be attributed to the
fact that the substitution of Al3+ for Co2+ and Fe3+/Fe4+ (e.g. La1-yCayFe1-xAlxO3-δ,
LaMg0.1Ga0.9-xAlxO3-δ,
SrCo0.4Fe0.6-xAlxO3-δ,
Sr0.7La0.3Fe1-xAlxO3-δ
and
Sr0.7La0.3Co0.8Al0.2O3-δ) not only decreased the oxygen vacancies but also the
conductivity of perovskite.[23-28] However, some researchers also found that the
substitution of Al3+ for Co2+ and Fe3+/Fe4+ is not only enhance the stability but also the
oxygen permeability. For instance, Julia et al. reported that the oxygen permeability of
Ba0.5Sr0.5Fe1-xAlxO3-δ (0 ≤ x ≤ 0.2) membranes has been improved with rising aluminum
content from 0 to 0.1.[23] E. Babakhani et al. also found that the introduction of Al
cation increased the oxygen permeability of BSCFO oxides.[29] Recently, Kaveh et al.
used a small amount of Al doping into the B-site of the perovskite phase in the
60Ce0.9Nd0.1O2-δ-40Nd0.6Sr0.4FeO3-δ (CNO-NSFO) and found that 60wt.%Ce0.9Nd0.1O2-
δ-40wt.%Nd0.6Sr0.4Fe0.8Al0.2O3-δ exhibited higher oxygen permeability and much more
stability in comparison to CNO-NSFO.[30,31] Zhu group is doped with Al on the basis
of
Ce0.85Sm0.15O1.925-Sm0.6Sr0.4FeO3-δ
(SDC-SSFO),
and
the
obtained
Ce0.85Sm0.15O1.925-Sm0.6Sr0.4Al0.3Fe0.7O3-δ exhibits high oxygen permeability and
stability and can work stably for a long time in the membrane reactor for the partial
oxidation of methane.[32-34] Although many Al-containing MIEC membranes have
been reported, the influence of the change of Al doping content in B-site of perovskite
phase on the oxygen permeability and stability of the composite OTMs has been rarely
studied so far. Here we report a series of Al-containing ceramic composite OTMs with
the composition of 60wt.%Ce0.9Pr0.1O2-δ-40wt.%40Pr0.6Sr0.4Fe1-xAlxO3-δ, (x = 0.1, 0.2,
0.3, 0.4, 0.6, 0.8, 1.0; 60CPO-40PSF1-xAxO). The purpose of this work is to understand
the influence of the substitution of Al into Fe in the B-site of Pr0.6Sr0.4FeO3-δ phase in
our previous reported 60Ce0.9Pr0.1O2-δ-40Pr0.6Sr0.4FeO3-δ materials on phase structure
transition, oxygen permeability and phase stability.[35]
Experiment
Synthesis of powders and membranes
The 60CPO-40PSF1-xAxO powders are prepared by a modified Pechini method. As
shown in the Fig. S1, the corresponding nitrates were sequentially weighed and added
into the deionized water according to the stoichiometric ratio of the material. Following,
the citric acid monohydrate (C6H8O7·H2O) as a complexing agent and ethylene glycol
(CH2OH)2 as a dispersing agent were added to the solution. The obtained solution was
heated and stirred using a magnetic stirrer to evaporate water to obtain a gel. Then the
gel was dried in an oven at 150 °C and ground to obtain the powder precursor. The as-
obtained precursor was heated at 600 °C to get rid of the organic components, and then
calcined in a furnace at 950 °C for 10 h to obtain the powders of 60CPO-40PSF1-xAxO.
The obtained powders were pressed to ~ 9.5 MPa using a cylindrical stainless steel
mold with a radius of 7.5 millimeter to obtain green disks. The black disks are sintered
at 1450 °C in air for 5 h with a heating/cooling rate of 1.5 °C/min to obtain the dense
60CPO-40PSF1-xAxO OTMs.
Characterization of membranes
The phase structures of the 60CPO-40PSF1-xAxO powders and membranes were
judged by X-ray diffraction (XRD, D-MAX 2200 VPC, Rigaku with Cu Kα). The data
set were recorded in a step-scan mode in the 2θ range of 20°-80° with an interval of
0.02°. The Rietveld's refinement of XRD data were analyzed by the Fullprof suite
(version: 14-June-2018) software. The crystal structures were made by the Vesta
program. The microstructures of the as-sintered membranes were observed by scanning
electron microscopy (SEM, Quanta 400F, Oxford), backscattered electron microscopy
(BSEM) and energy dispersive X-ray spectroscopy (EDXS).
Oxygen permeability of membranes
Oxygen permeability of 60CPO-40PSF1-xAxO composite membranes were evaluated
by a homemade high-temperature oxygen transmission equipment.[36,37] The 60CPO-
40PSFxA1-xO composite membranes was sealed on a corundum tube with a heat-
resistant adhesive (Huitian, China) and baked at 140 °C for 10 h, and the lateral
direction of the oxygen permeable membrane was also covered with heat-resistant
adhesive to avoid the transmission of radial oxygen affecting the final measured value.
The effective working areas of our membranes are around 0.8659 cm2. One side of the
composite membranes was feed by dry synthetic air which comprising of high purity
O2 and N2 with ratio of 21:79. And He or CO2 as a sweeping gas were fed to the other
side of the membranes. All inlet gas flows are controlled by the mass flowmeters
(Sevenstar, China) and are periodically calibrated using a soap membrane flow meter.
Dry synthetic air (21 % O2 + 79 % N2) with a flow rate of 100 mL min-1 as feed gas; a
mixture of He or CO2 (49 mL min-1) and Ne (1 mL min-1) of internal standard gas as
sweeping gas. Analysis of the composites of the gas phase mixture using the gas
chromatograph (GC, Agilent-7890B, USA). The oxygen permeation rate of the
membrane were calculated by the following formula．
(1)
Where CO2 and CN2 represent the oxygen concentration and the nitrogen concentration,
respectively and they can be measured by gas chromatograph. 4.02 is the ratio of the
leaked nitrogen according to the theory of Kundsen diffusion. There is a small amount
of air that diffuses through the high temperature resistant adhesive, which will interfere
with our judgment of the true oxygen permeation rate, so we must deduct the oxygen
(< 7 %) that is not diffused through the membrane. F is the total flow rate of the exhaust
gas of the sweep side. It can be calculated based on the concentration of helium. And S
is the effective oxygen permeation working region of the 60CPO-40PSF1-xAxO dual-
phase membrane sealed on the corundum tube.[38-40]
Result and Discussion
The crystal structures of the as-prepared 60CPO-40PSF1-xAxO powders after calcined
at 950 °C for 10 h are determined by XRD. As shown in Fig. 1, the XRD patterns are
mainly indexed to the combination of fluorite phase CPO (space group No.255: Fm3m)
and perovskite phase PSF1-xAxO (space group No.74: Imma). And it can be observed
that the peak of PSF1-xAxO phase shifts to a higher Angle with the increase of x. In other
words, as more Fe is replaced by Al, the cell parameters of PSFAO phase become
smaller, which is attributed to the smaller ion radius of Al3+ (50 pm) in comparison to
Fe3+ (64 pm). With the continuous increase of x, the peak position of the CPO phase
did not change at all, while the peak of the PSF1-xAxO phase shifted continuously,
indicating that Al was successfully added into the perovskite phase but not into the CPO
SFCCcmmLJNOO)02.4()min(22122 phase. When x ≥ 0.6, part of the XRD peaks of PSF1-xAxO overlapped with part of the
XRD peaks of CPO phases, which made the peak (32.5°, 46.9°, 58.6°, 78.7°) become
wider. And when x ≥ 0.8, the impurity phase PrSrAl3O7 appears in the XRD patterns.
The above analysis indicated that the maximum solid solution Al in PSFO is 0.6. When
x ≤ 0.6, the composite powders consist of only CPO and PSFAO phases, suggesting
that the 60CPO-40PSF1-xAxO (0 ≤ x ≤ 0.6) samples can be successfully synthesized via
the modified Pechini method. In order to check phase structures of the 60CPO-40PSF1-
xAxO composite membranes, the sintered membranes are also characterized by XRD
(see Fig. S2). The results reveal that when x ≤ 0.6, the sintered composite membranes
under studied also consist of only CPO and PSF1-xAxO phases, whereas if x ≥ 0.8, the
additional phase PrSrAl3O7 shows again in the XRD patterns for sintered samples,
which is consistent with the XRD results of powder samples.
To further verify the above conclusions, we refined all the XRD patterns of the dual-
phase powders using Rietveld refinement and obtained their cell parameters. The results
showed that with the increase of aluminum content, the cell parameters of PSF1-xAxO
phase increased gradually, while the cell parameters of CPO phase did not change
significantly, as shown in Fig. 2. Smaller unit cell parameters mean that the bond
between the B atom in the perovskite and the six coordinating oxygen atoms around it
is shorter. And it turns out that Al-O (1.651) has a shorter bond length than Fe-O
(1.759),[41] and the bond energy of Al-O is larger, which means that the octahedral
structure composed of aluminum atoms and surrounding oxygen atoms is more stable,
making the perovskite phase less prone to structural phase change or structural collapse
at high temperature or low oxygen partial pressure conditions. However, when x is
greater than 0.6, both CPO and PSF1-xAxO phase cell parameters both become larger,
which may be attribute to more Al3+ diffuses to the interstitial site of CPO and the
PSFAO with the increase of Al reflecting by more impurities of PrSrAl3O7 showing up
with the increase of Al. A similar situation has been reported by Wu.[42]
We next inspected the microscopic morphology of the 60CPO-40PSF1-xAxO
membranes after high temperature sintering by scanning electron microscope (SEM).
After several attempts at different sintering temperatures, it was finally found that when
the sintering temperature was 1475 °C, the surfaces of the obtained composite
membranes were dense. As shown in Fig. S3, there are no pores and cracks or other
impurities on the surface of the membranes, and the grain are tightly bound and clearly
demarcated. Further, the CPO and PSF1-xAxO phase could be identified by BSEM as
shown in Fig. 3. The gray grain is the perovskite phase (PSF1-xAxO), and the light grain
is the fluorite phase (CPO), since the contribution of the backscattered electrons to the
SEM signal intensity is proportional to the atomic numbers. It can be clearly observed
that the grains of the CPO phase and the PSF1-xAxO phase are randomly and uniformly
distributed in the membranes, and the average grain sizes of the fluorite and perovskite
phases are substantially uniform. Uniform distribution of the two phases helps ensure
that each oxygen ion transport channel (is mainly CPO and PSF1-xAxO phase) and
electron transport channel (is mainly PSF1-xAxO phase) are connected. Thus, the oxygen
permeation process can be smoothly carried out, and the dual-phase membrane can be
predicted to have good oxygen permeation performance. However, when the Al content
x reaches 0.8, as shown in figure (g) and (h), dark grain (PrSrAl3O7) appears on the
surface of the material, which is consistent with the previous XRD results.
To further study the effect of different Al content on the oxygen permeability of 60CPO-
40PSF1-xAxO MIEC membranes, we tested the oxygen permeation rates of 60CPO-
40PSF1-xAxO (x = 0.1, 0.2, 0.3, 0.4, 0.6, 0.8) with different Al content using our
homemade device. Fig. 4 exhibits the oxygen permeation fluxes (JO2) of membranes
with a thickness of 0.4 mm with different Al content at the temperature range of 900-
1000 °C in air/He condition. The most intuitive conclusion is that the oxygen
permeation fluxes through all the 60CPO-40PSF1-xAxO (x = 0.1, 0.2, 0.3, 0.4, 0.6, 0.8)
dual-phase membranes increase with enhancing temperatures. This is because the
increase of temperature provides more internal energy for the diffusion of oxygen ions,
so that more oxygen ions can overcome the potential barrier from one side of the
membrane to the other side faster.
Of interest to us, the oxygen permeation fluxes of different membranes are not
positively or negatively correlated with the content of Al at a certain temperature. For
example, at 1000 °C, the JO2 of PSF6A4O is the highest (1.12 mL min-1 cm2) and
PSF2A8O has the lowest oxygen permeation fluxes (0.5 mL min-1 cm2). In order to more
intuitively understand the influence of the change of Al content on the oxygen
permeation fluxes of CPO, the broken line graph of JO2 as a function of Al content is
plotted in Fig. 5. It can be seen clearly that with the increase of aluminum content (x),
the JO2 of the 60CPO-40PSF1-xAxO membranes increases initially. When x = 0.4, the
JO2 of membranes reaches the maximum value. However, when x continues to increase
and is greater than 0.4, JO2 of membranes begins to decrease. When x increases to 0.8,
JO2 is minimized. This may be interpreted as the following aspects: First, because the
variable valence of Fe3+/Fe4+ ions provides better electronic conductivity for the PSF1-
xAxO phase, excessive substitution of Fe3+/Fe4+ by Al3+ will lead to a decrease in the
electronic conductivity of the material, which leading to the reduce of the oxygen
permeability of the 60CPO-40PSF1-xAxO membranes. Second, as shown in the previous
XRD pattern and SEM graph, an excess of Al doping leading to the formation of
impurity phases that enrichment on the surface of the membranes results in a decrease
in the oxygen permeability of the 60CPO-40PSF1-xAxO composites. When Al3+ is
substituted a small amount of Fe3+/Fe4+, the stoichiometric ratio of oxygen in PSF1-
xAxO will be lower than that in PSFO, which means that there are more oxygen
vacancies in PSFAO, thus improving the oxygen permeability of 60CPO-40PSF1-xAxO
composites doped with Al (x ≤ 0.4). Briefly speaking, on the one hand, due to the
substitution of Al3+ for Fe3+/Fe4+, the membrane has more oxygen vacancies, thus
higher oxygen permeability. On the other hand, too much substitution of Al3+ for
Fe3+/Fe4+ will lead to the decrease of electronic conductivity of the membrane and the
formation of harmful PrSrAl3O7 phase, which leads to lower oxygen permeability.
Therefore, the suitable of Al doping is benefit for the structure stability and oxygen
permeability. From the aforementioned analysis results, we can conclude that the
optimal doping level for oxygen permeability in 60CPO-40PSF1-xAxO membranes is x
= 0.4, where the JO2 is 1.12 mL min-1 cm2 at 1000 °C and reach the minimum
requirements of industrial application (1.0 mL min-1 cm2).[43]
Fig. 6 presents the Arrhenius plots of the oxygen permeation fluxes through 60CPO-
40PSF1-xAxO membranes with different Al content under an air/He atmosphere.
According to Fig. 6, the apparent activation energies of 60CPO-40PSF1-xAxO (x = 0.1,
0.2, 0.3, 0.4, 0.6, 0.8) in the range of 900-1000 °C were calculated to be 76.36, 67.99,
65.68, 40.39, 51.02 and 51.77 kJ mol-1, respectively. Among them, the apparent
activation energy of 60CPO-40PSF6A4O is the smallest, which means that the energy
required for oxygen ions inside the material to break through the potential barrier and
diffuse is the lowest. And pre-exponential factor of 60CPO-40PSF6A4O composition
was found to be the largest, indicating that the number of active sites inside 60CPO-
40PSF6A4O is more than other 60CPO-40PSF1-xAxO membranes. This is consistent
with the highest oxygen permeability of 60CPO-40PSF6A4O among the 60CPO-
40PSF1-xAxO.
Fig. 7 presents the oxygen permeation fluxes through 60CPO-40PSF1-xAxO as a
function of time under He/air gradient at 1000 °C. As shown in Fig. 8, the oxygen
permeation fluxes through all the 60CPO-40PSF1-xAxO membranes remain unchanged
regardless of the value of the Al content (x). And after 50 hours of stable worked, the
JO2 of the 60CPO-40PSF6A4O membranes does not decrease and there is no crack on
the membranes surface. Other membranes did not have any cracks on their surfaces
after 24 hours of stable operation. The results real that 60CPO-40PSF1-xAxO membranes
can maintain good oxygen permeability and high temperature-resistant stability even
when working in a 1000 °C environment for a long time. As previously analyzed, the
doping of Al to the B-position of the perovskite (ABO3) makes the structure of the
oxygen octahedron more stable, so that the structure of the PSF1-xAxO phase still has
good order in a high temperature environment for a long time.
To further investigate the CO2 stability of 60CPO-40PSF1-xAxO composites, the
composites powders were exposed in pure CO2 environment for 24 hours at different
temperatures (800 °C, 900 °C and 1000 °C). As shown in Fig. 8, the XRD patterns of
60CPO-40PSF1-xAxO powder after exposing in the atmosphere of carbon dioxide for
24 hours did not change significantly, indicating that the materials did not react with
CO2 to generate corresponding carbonate. However, in some previous reports, the
formation of carbonate will destroy the phase structure of the membranes and reduce
the oxygen permeability and stability of the membranes. The above results signify that
our 60CPO-40PSF1-xAxO membranes exhibit good structure stability even in pure CO2
atmosphere at 800-1000 °C and can avoid this bad situation. In our previous study,
60Ce0.9Pr0.1O2-δ-40Pr0.6Sr0.4Fe0.8Al0.2O3-δ dual phase membrane worked stably for 100
hours with CO2 as the sweep gas at 1000 °C. In summary, the 60CPO-40PSF1-xAxO
membrane has excellent CO2-tolerant stability and it has a wide range of potential
application prospects.
Conclusions
The Al-containing composites 60wt.%Ce0.9Pr0.1O2-δ-40wt.%40Pr0.6Sr0.4Fe1-xAlxO3-δ (x
= 0.05, 0.1, 0.2, 0.3, 0.4, 0.6, 0.8, 1.0) was successfully synthesized via a modified
Pechini method. The XRD and the refining results show that the doping of Al makes
the cell parameters of the PSF1-xAxO phase smaller. When x is greater than 0.6, the third
phase appeared in the composite, and the cell parameters become larger. The SEM
image shows that the composites have excellent chemical compatibility, and the two
phases are uniformly mixed and have no obvious pores. Oxygen permeability test
showed that the oxygen permeability of 60CPO-40PSF1-xAxO membrane increased with
the increase of Al content, but when x was greater than 0.6, the oxygen permeability
decreased with the increase of aluminum content. The final stability test shows that the
Al-doped composites has good CO2-stable reduction-tolerant and high temperature-
resistant, so it has potential application prospects in oxy-fuel combustion based on
oxygen permeation membrane.
Acknowledgment
H. X. Luo acknowledges the financial support by "Hundred Talents Program" of the
Sun Yat-Sen University and National Natural Science Foundation of China (21701197).
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Fig. 1. Rietveld refinement XRD patterns of 60CPO-40PSF1-xAxO (x = 0.05, 0.1, 0.2,
0.3, 0.4, 0.6, 0.8, and 1.0) powders after calcined at 950 °C for 10 h in air.
Fig. 2. Crystal structure characterization of 60CPO-40PSF1-xAxO: (a) the CPO phase
crystal structure on the left, the PSF1-xAxO phase crystal structure on the right; CPO cell
parameter as a function of Al content for (b); PSF1-xAxO cell parameter as a function of
Al content for (c, d).
Fig. 3. BSEM micrographs of plane view of the surfaces of 60CPO-40PSF1-xAxO (x =
0.05, 0.1, 0.2, 0.3, 0.4, 0.6, 0.8, and 1.0) composite membranes after sintering at
1475 °C for 5 h. In BSEM, the gray grains represent the PSF1-xAxO grains; the light
ones represent the CPO grains, and the dark ones represent the PrSrAl3O7 grains.
Fig. 4. Oxygen permeation fluxes through the 60CPO-40PSF1-xAxO (x = 0.1, 0.2, 0.3,
0.4, 0.6, 0.8) composite membranes.
Condition: 100 mL min-1 air as the feed gas, 49 mL min-1 He, 1 mL min-1 Ne as an
internal standard gas. Membrane thickness: 0.4 mm.
Fig. 5. Oxygen permeation fluxes through the 60CPO-40PSF1-xAxO (x = 0.1, 0.2, 0.3,
0.4, 0.6, 0.8) composite membranes at 900 °C, 950 °C, 1000 °C.
Condition: 100 mL min-1 air as the feed gas, 49 mL min-1 He, 1 mL min-1 Ne as an
internal standard gas. Membrane thickness: 0.4 mm.
Fig. 6. Arrhenius plot of oxygen permeation fluxes for 60CPO-40PSF1-xAxO (x = 0.1,
0.2, 0.3, 0.4, 0.6, 0.8) composite membranes.
Condition: 100 mL min-1 air as the feed gas, 49 mL min-1 He, 1 mL min-1 Ne as an
internal standard gas. Membrane thickness: 0.4 mm.
Fig. 7. Oxygen permeation fluxes of 60CPO-40PSF1-xAxO membranes as a function
of time using pure He as sweep gas at 1000 °C.
Condition: 100 mL min-1 air as the feed gas, 49 mL min-1 He, 1 mL min-1 Ne as an
internal standard gas. Membrane thickness: 0.4 mm.
Fig. 8. XRD patterns of 60CPO-40PSF1-xAxO powders calcined at 800 °C, 900 °C and
1000 °C for 24 h under CO2 atmosphere.
Supporting information
Effects of Al content on the oxygen permeability through dual-phase
membrane 60Ce0.9Pr0.1O2-δ-40Pr0.6Sr0.4Fe1-xAlxO3-δ
Lei Shia, Shu Wanga, Tianni Lub, Yuan Hea, Dong Yana, Qi Lana, Zhiang Xiea, Haoqi
Wanga, Mebrouka Boubechea, Huixia Luoa*
aSchool of Material Science and Engineering and Key Lab Polymer Composite &
Functional Materials, Sun Yat-Sen University, No. 135, Xingang Xi Road,
Guangzhou, 510275, P. R. China
bSchool of Materials Sciences and Engineering, Shenyang Aerospace Unversity,
Shenyang, 110136, P. R. China
*Corresponding author/authors complete details (Telephone; E-mail:) (+0086)-
2039386124
[email protected]
Fig. S1. The flowchart of preparation process of 60CPO-40PSF1-xAxO via a modified
Pechini method.
Fig. S2 XRD patterns of 60CPO-40PSF1-xAxO composite membranes after sintering at
1475 °C for 5 h.
Fig. S3 SEM micrographs of plane view of the surfaces of 60CPO-40PSF1-xAxO (x =
0.05, 0.1, 0.2, 0.3, 0.4, 0.6, 0.8, and 1.0) composite membranes after sintering at
1475 °C for 5 h.
|
1908.05886 | 1 | 1908 | 2019-08-16T08:33:44 | Influence of annealing temperature on the structural, topographical and optical properties of sol gel derived ZnO thin films | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | This investigation deals with the effect of annealing temperature on the structural, topographical and optical properties of Zinc Oxide thin films prepared by sol gel method. The structural properties were studied using X-ray diffraction and the recorded patterns indicated that all the films had a preferred orientation along (002) plane and the crystallinity along with the grain size were augmented with annealing temperature. The topographical modification of the films due to heat treatment was probed by atomic force microscopy which revealed that annealing roughened the surface of the film. The optical properties were examined by a UV visible spectrophotometer which exhibited that maximum transmittance reached nearly 90% and it diminished with increasing annealing temperature. | physics.app-ph | physics | Influence of annealing temperature on the structural, topographical and optical
properties of sol -- gel derived ZnO thin films
Joydip Sengupta a,⁎, R.K. Sahoo b, K.K. Bardhan a, C.D. Mukherjee a
a Experimental Condensed Matter Physics Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Calcutta 700064, India
b Materials Science Centre, Indian Institute of Technology, Kharagpur 721302, India
Keywords:
Zinc oxide thin film
Sol -- gel preparation
Annealing
X-ray diffraction
Atomic force microscopy
Optical properties
a b s t r a c t
This investigation deals with the effect of annealing temperature on the structural, topographical and optical
properties of Zinc Oxide thin films prepared by sol -- gel method. The structural properties were studied using
X-ray diffraction and the recorded patterns indicated that all the films had a preferred orientation along (002)
plane and the crystallinity along with the grain size were augmented with annealing temperature. The
topographical modification of the films due to heat treatment was probed by atomic force microscopy which
revealed that annealing roughened the surface of the film. The optical properties were examined by a UV --
visible spectrophotometer which exhibited that maximum transmittance reached nearly 90% and it
diminished with increasing annealing temperature.
1. Introduction
Zinc Oxide (ZnO) is a II -- VI semiconductor with hexagonal wurtzite
crystal structure. Owing to the direct band gap (3.3 eV), large exciton
binding energy (60 meV), piezoelectric properties and high transmit-
tance in the visible region; ZnO has become a potential candidate for
variety of applications e.g. short-wavelength light emitting devices
[1], solar cell [2], surface acoustic wave devices [3] etc. Beside the
numerous potential applicability of ZnO the additional advantages are
non-toxicity, chemical and thermal stability, ready availability and
low cost. Thus,
in recent years ZnO has received considerable
attention towards the fabrication of good quality thin films, employ-
ing pulsed laser deposition, RF magnetron sputtering, electro-
deposition, chemical vapor deposition, spray pyrolysis, sol -- gel
process etc. Among different synthesis methods, the sol -- gel process
of film preparation is attractive as it provides simple, inexpensive
preparation of a large-area homogeneous thin film along with
excellent compositional control, lower crystallization temperature
and uniform film thickness.
The principal factors affecting the microstructure and properties of
the sol -- gel derived film are aging time of sol [4], thickness of the film
[5], annealing treatment [6] etc. In particular, the annealing treatment
is a primary factor which significantly affects the physical properties
⁎ Corresponding author. Fax: +91 33 2337 4637.
E-mail address: [email protected] (J. Sengupta).
of sol -- gel derived films. Therefore, it is necessary to systematically
investigate the effect of annealing on structural, topographical and
optical properties of the sol -- gel derived ZnO films, which are
important parameters to be taken under consideration for optoelec-
tronic applications of these films.
2. Experimental procedure
Zinc acetate dihydrate (Zn(CH3COO)2·2H2O), isopropyl alcohol
(IPA) and diethanolamine (C4H11NO2) were used as starting material,
solvent and stabilizer, respectively. First, zinc acetate dihydrate was
dissolved in IPA and then diethanolamine was slowly added into the
solution under magnetic stirring. The molar ratio of diethanolamine to
zinc acetate was kept at 1. The resulting mixture was stirred for 1 h at
65 °C, and then 3 h at room temperature to yield a clear and
homogeneous 0.5 M solution. The solution was aged for 48 h at
room temperature. Thin films of ZnO were prepared by spin coating
the aged solution onto pre-cleaned quartz substrates at rotation speed
of 3000 rpm for 30 s in ambient condition. Afterwards the films were
dried at 300 °C for 10 min in air to evaporate the solvent and organic
residues. The ZnO films were then inserted into a furnace and
annealed in air at 400, 550 and 700 °C for 1 h.
An atomic force microscope (AFM) (Nanonics Multiview 4000™)
in intermittent contact mode, Philips X-ray diffractometer (XRD)
(PW1729) with Co source and UV -- visible (UV -- vis) spectrophotom-
eter (PerkinElmer, Lambda 35) were used to characterize the
annealed ZnO films.
The average grain size (D) of the ZnO films was also calculated
using the full width at half maximum (FWHM) of (002) peak from the
Scherrer's equation
D =
Κλ
β Cos θ
ð2Þ
where Κ=0.9 is the shape factor, λ is the wavelength of incident X-
ray, β is the FWHM measured in radians and θ is the Bragg angle of
diffraction peak. It was observed (Table 1) that, as the annealing
temperature increased from 400 to 700 °C, the FWHM value exhibited
a tendency to decrease. The trend of FWHM values implied that the
crystallinity of the ZnO thin films was improved as the annealing
temperature was increased [10]. It was also observed (Table 1) that
average grain size was increased with increasing annealing temper-
ature. This could be explained by considering the thermal annealing
induced coalescence of small grains by grain boundary diffusion
which caused major grain growth [10].
Three-dimensional AFM images as given in Fig. 2 showed the
influence of post-growth annealing on the surface morphology of ZnO
thin films. All the samples showed good homogeneity and no cracks
were noted. Upon close inspection of the AFM images, it was observed
that the grain sizes become larger with the increase of annealing
temperature. At high temperatures, atoms had enough diffusion
activation energy to occupy the energetically favorable site in the
crystal lattice and eventually grains with the lower surface energy
became larger, which was consistent with the results of XRD. The root
mean square (RMS) roughness of the ZnO thin films annealed at 400,
550 and 700 °C was listed in Table 1, which revealed that the RMS
roughness value of the annealed ZnO films was also increased with
the increasing annealing temperature. This could be explained in
terms of major grain growth which yields an increase in the surface
roughness [6].
Optical properties of ZnO films deposited on quartz substrate and
annealed at 400, 550 and 700 °C were analyzed by spectrophotomet-
ric measurements. The optical transmittance spectra of annealed ZnO
films (Fig. 3) exhibited sharp absorption edges in the wavelength
region around 380 nm. The average transmittance of the annealed
ZnO thin films (Table 1) indicated that the transmittance had
decreased with the increase in annealing temperature.
It was
previously reported that surface roughness strongly affects the
transparency of ZnO-based thin films [11]. The AFM measurements
already revealed that the roughness values of the ZnO films had
increased with annealing temperature. So it could be stated that the
major reason for the decrease in transmittance with higher annealing
temperature might be due to the rough surface scattered and reflected
light.
From transmittance measurements the optical band gap could also
be estimated by employing the Tauc model:
ð3Þ
ð
αhv
Þ = A hν−Eg
1 = 2
where α is the absorption coefficient, hν is the photon energy, A is a
constant and Eg is the optical bandgap. The optical bandgap of ZnO
thin films annealed at different temperatures was determined by
Fig. 1. X-ray diffraction spectra of annealed ZnO thin films deposited on quartz
substrate using spin coating.
3. Results and discussion
The XRD patterns of ZnO thin films annealed at three different
temperatures (Fig. 1) showed that all annealed films were polycrys-
talline in nature with a hexagonal wurzite structure. The diffracto-
grams also revealed that preferred orientation along (002) was
common in all the films and the intensity of (002) peak gradually
increased with the increasing annealing temperature. It was reported
that the preferential crystal orientation of ZnO films has a profound
impact on ZnO-based device properties [7]. Therefore, in order to
precisely investigate the effect of annealing temperature on the
degree of orientation of the (002) plane a formula proposed by
Lotgering was used [8].
ð
F hkl
Þ =
ð
P hkl
Þ−P0 hkl
ð
Þ
1−P0 hkl
ð
Þ
ð1Þ
where F(hkl) is the degree of (hkl) orientation, P(hkl)=I(hkl)/∑I
(hkl) and P0(hkl) =I0(hkl)/∑ I0(hkl). Here I(hkl) is the (hkl) peak
intensity and ∑ I(hkl) is the sum of the intensities of all peaks in the
ZnO films' diffraction data. I0(hkl) is the (hkl) peak intensity and ∑ I0
(hkl) is the sum of the intensities of diffraction peaks in the reference
data (JCPDS 36 -- 1451). The values of degree of orientation of the (002)
plane of the annealed ZnO films (Table 1) revealed that the
preferential c-axis orientation perpendicular to the substrate surface
augmented with the increase in annealing temperature. The incre-
ment of degree of orientation could be explained as, with the increase
of annealing temperature ZnO crystallites gain enough energy and
orient themselves along (002) plane as it possesses highest atomic
packing density and minimum surface energy [9].
Table 1
The data evaluated form the XRD, AFM and UV -- vis measurements of sol -- gel derived ZnO thin films after annealing at different temperatures.
Annealing temperature
(°C)
Degree of orientation
of (002) plane
FWHM of (002)
plane (degree)
Average grain
size (nm)
RMS roughness
(nm)
Average
transmittancea(%)
Optical bandgap
(eV)
400
550
700
0.22
0.25
0.32
0.39303
0.31374
0.25019
25
31
39
3.38
6.33
11.16
89
85
80
3.26
3.25
3.24
a The average transmittance values were calculated using the transmittance data from 420 to 800 nm.
Fig. 2. Three dimensional AFM images of ZnO thin films deposited on quartz substrate after annealing at different temperatures in air for 1 h (a) 400 °C, (b) 550 °C, (c) 700 °C.
extrapolation of the straight section to the energy axis of the plot of
(αhν)2 versus photon energy (inset of Fig. 3). Table 1 lists the
extrapolated bandgap values of ZnO thin films which showed
decrease in bandgap with increasing annealing temperature. The
shifts of the optical band gap might be attributed to the decreased
defect of the thin films with the increase in annealing temperature.
good transparency in the wavelength region of 400 to 800 nm.
However,
it was observed that the optical transmittance had
decreased with increase in annealing temperature which could be
explained by the increased surface roughness of the deposited films as
confirmed by AFM.
4. Conclusions
We have investigated the structural, topographical and optical
properties of sol -- gel derived ZnO thin films deposited on quartz
substrate with respect to annealing temperature. The study revealed
that all the ZnO thin films had preferred c-axis orientation with
hexagonal wurtzite structure. Moreover, the crystallinity, degree of
preferred orientation and average grain size of the films increased
with annealing temperature. The annealed ZnO films also showed
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|
1909.03682 | 2 | 1909 | 2019-09-11T07:26:57 | Elastic higher-order topological insulators with quantization of the quadrupole moments | [
"physics.app-ph",
"cond-mat.mes-hall"
] | We demonstrate that HOTIs with the quantization of the quadrupole moments can be realized in the two-dimensional elastic phononic crystals (PnCs). Both one-dimensional (1D) topological edge states and zero-dimensional (0D) topological corner states are visualized and can be transformed each other by tuning the crystalline symmetry in a hierarchical structure. The systematic band structure calculations indicate that elastic wave energy in the hierarchical structure can be localized with remarkable robustness, which is very promising for new generations of integrated solid-state phononic circuits with a great versatility. | physics.app-ph | physics | Elastic higher-order topological insulators with quantization of the quadrupole moments
Zhen Wang,1 Qi Wei,1 Heng-Yi Xu,1,* and Da-Jian Wu1,*
1Jiangsu Key Laboratory of Opto-Electronic Technology, School of Physics and Technology, Nanjing
Normal University, Nanjing 210023, China
*[email protected]; [email protected]
We demonstrate that HOTIs with the quantization of the quadrupole moments can be realized in
the two-dimensional elastic phononic crystals (PnCs). Both one-dimensional (1D) topological edge states
and zero-dimensional (0D) topological corner states are visualized and can be transformed each other by
tuning the crystalline symmetry in a hierarchical structure. The systematic band structure calculations
indicate that elastic wave energy in the hierarchical structure can be localized with remarkable robustness,
which is very promising for new generations of integrated solid-state phononic circuits with a great
versatility.
Introduction. -- In recent years, the topological insulators (TIs), which feature the backscattering-
immune edge states, have been observed in a variety of quantum Hall families of both fermionic and
bosonic systems [1-21] (e.g. quantum Hall effects(QHE), quantum spin Hall effects(QSHE) and the
quantum valley Hall effects(QVHE)) and provide building blocks of various topological devices [22-27].
While the higher-order topological insulators (HOTIs), constituting a new family of topological phases,
have attracted enormous attention due to their potential as a new type of information carriers with the
quantized multipole polarization and enriched our knowledge of nontrivial topological insulating phases.
According to the bulk-boundary correspondence, a dD TI with (d−1)D, (d−2)D, ..., (d−n−1)D gapped
boundary states and (d−n)D gapless boundary states is defined as the so-called nth-order TI. Recent
theoretical studies have shown that it is possible to realize HOTIs beyond the traditional bulk-boundary
correspondence (the first-order TIs) [28,29]. The Higher-order topological corner states can either stem
from the quantization of dipole moments, or the quantization of the quadrupole moments [30]. The
HOTIs with the quantization of the dipole moments in photonic crystals was proposed by Xie et al. [31],
and Fan et al. [32] implemented the elastic HOTIs with the quantization of the qradrupolee moments in
a two-dimensional (2D) breathing graphene lattice. Furthermore, Zhang et al. [33] observed
experimentally the HOTIs with the quantization of the dipole moments in tunable two-dimensional sonic
crystals. Elastic phonons in solids are nowadays advantageous to the high signal-to-noise ratio
information processing compared to the fluid/airborne ones. Based on the 2D extension of the Su-
Schrieffer-Heeger (SSH) lattice [34 -- 37], we here demonstrate that the quantization of quadrupole
moments in the elastic systems can also give rise to HOTIs. The Implementation of the HOTIs with the
quantization of quadrupole moments in a Lamb-wave system has two major steps: (I) By introducing a
Dirac mass m2D, a complete a band gap is opened up in vicinity of the original quadruple degeneracy
Dirac point accompanied with a bulk topological transition. And topological edge states emerge at the
boundaries between two PnCs with opposite signs of the Dirac mass m2D. (II) By breaking the glide
symmetry at the domain boundary, edge topological transition is discovered and topological corner states
(Jackiw -- Rebbi soliton states [38]) show up in the band gap.
The macroscopic controllability of PnCs makes it a versatile tool for exploring acoustic analogues
of quantum topological phases in condensed-matter materials in which topological transitions often
demand sophisticated atomic-scale manipulations. On the other hand, the elastic wave propagation in
well-structured phononic systems exhibits many exotic properties from negative refraction [39], super
focusing [40] to cloaking [41]. It is therefore worthwhile to investigate the HOTIs in Lamb-wave PnCs.
In this work, we engineer a hierarchical structure formed by two pieces of PnCs, where its inner and
outer PnCs have different topological phases, to visualize both the first-order and the second-order
topological insulating phases. Various topological transitions between the corner, edge and bulk states by
tuning the crystalline symmetry are studied, and the robustness of Lamb-wave HOTIs with topologically
protected corner modes are verified to pave a way to manipulate the propagation of Lamb waves and
design novel phononic devices.
This paper is organized as follows. Bulk topological phase transition in Lamb-wave PnCs is
introduced in Sec. II. In Sec. III and IV, we study the edge topological phase transition and high-order
topological phase by the glide symmetry broken in the edge. In Sec. V, we verify the robustness of these
topological corner states against defects. A hierarchical topological insulating phases in PnCs is
demonstrated in in Sec. VI. Finally, a summary is given in Sec. VII.
Bulk topological phase transition. -- Our 2D PnCs consist of a squared lattice with four artificial
atoms in a unit cell as depicted in Fig. 1(a), where l1,2, w1,2 and h1,2 are the length, width and height of the
plate and prisms, respectively. θ is rotation angle of a quadrangular prism as shown in Figs. 1(b) and 1(c).
Solid stainless steel prisms (blue) are arranged as a squared-lattice structure on the surface of aluminum
plate (red). The constitutive parameters of stainless steel and aluminum plate in the calculations are
shown in Table I. Full-wave simulations are carried out by a commercial finite-element solver (COMSOL
Multiphysics). In the calculations, the free boundary conditions on the upper and lower surfaces of the
plate and Floquet periodicity around the unit cells are applied, which ensure validity of 2D
approximations. The out-of-plane modes (black lines) characterized by the parabolic dispersion are
loosely coupled with in-plane modes (gray lines), which is beyond the scope of this work and is neglected
[32]. When the geometric parameters of prisms and plate are identical [l1=w1=a, h1=0.4a, l2=0.35a,
w2=0.15a, h2=0.35a, a (25μm) is the lattice constant], there exists a quadruple degenerate point (θ=0°) at
high symmetry point X as shown in Fig. 1(e) with the geometry of the first Brillouin zone being depicted
in the inset of Fig. 1(e). A Dirac mass m2D is introduced to tight-binding model (2D SSH model) by
rotating the angle θ of the four meta-atoms such that the degeneracy of the gapless point is lifted and a
full phononic band gap emerges as presented in Figs. 1(c) and 1(e). We further consider the cases of the
inverted and eversion lattices [indicated by blue prisms in Figs. 1(b) and 1(c)]: with θ=±45°, which
corresponds to the maximum value of bulk band gap [33] while preserves the mirror symmetry. As θ is
varied gradually from -45° to 45°, the bulk band gap will undergo a topological phase transition as shown
in Figs. 1(c)-(e). Moreover, lattice (θ<0°) and eversion lattice (θ>0°) are characterized by two distinct
topological phases which are connected by a band-inversion process.
TABLE I. Parameters of aluminum and stainless steel used in numerical simulations.
aluminum
stainless steel
Density (kg/m3)
Young's modulus (GPa)
Poisson's ratio
2700
70
0.34
7903
219
0.32
Fig. 1. Crystal structures and bulk band structures. (a) Three-dimensional structure of a unit cell with
aluminum plate (red) and stainless steel prisms (blue). The illustration is a Cartesian axis. l1,2, w1,2 and
h1,2 are the length, width and height of the plate and prisms, respectively. (b) and (c) Projection of the
unit cell in the y direction. The white translucent area represents the normal square lattice (θ=0°). The
blue areas are inverted (b) and everted (c) lattices with θ=-45° and θ=45°, respectively. (d) Band
structures for θ=-45°(left), θ=0°(middle), and θ=45°(right), which represent inverted, normal, and
everted lattice, respectively. For inverted and everted lattices, the band structures have the same
dispersion but different parities (denoted by red and blue symbols at the X point).
To get a deeper physics insight of the above phenomenology, we continue to analyze the elastic
field distributions of the unit cell for two cases (θ=±45°) as shown in Fig. 2, where the black arrows
represent the directions of elastic energy flow. The patterns in Figs. 2 (a) and 2(b) correspond to the
modes at the high symmetry point X in Figs. 1(d) and 1(f), respectively. By analyzing the patterns on the
surface of the four scatters of unit cell I in Fig. 2(a), we find that the stainless steel prisms evolve via two
different manners: the first one vibrates in a radially breathing manner between prisms A and D, and the
second one characterizes a peer chiral elastic energy flow rotating in the xz-plane in the time-domain
between prisms B and C. In addition, it is evident that every two modes with the same frequency show
opposite chirality on the surface of the aluminum plate, so that the chiral elastic energy flows can be
viewed as pseudospins [42-44]. By utilizing these analogues, researchers have achieved electromagnetic
[45-47] and acoustic transmission line [48-51] with robust, valley-dependent transport of wave energy.
Fig. 2. The elastic field distributions in two different unit cells. (a) Elastic field distribution inside a unit
cell when θ=-45°, upper and low panels correspond to the red and blue symbols in Fig. 1d, respectively.
(b) Elastic field distribution inside a unit cell when θ=45°, upper and low panels correspond to the blue
and red symbols in Fig. 1d, respectively.
Edge topological phase transition. -- To demonstrate the existence of topological edge states, we
consider a composite structure of PnC where a topologically nontrivial PnC is jointed by a topologically
trivial PnC. The simulated projected band structure is shown in Fig. 3(a). In the simulations, the
absorption boundary conditions are applied on the surfaces parallel to the interface of two PnCs to
exclude extra edge states, while Floquet periodic boundary conditions are used for the boundaries
perpendicular to the interface. All the other parameters remain the same as those in Fig. 1. The red and
blue triangle marks represent the equivalent elastic pseudospin up and pseudospin down, respectively.
Their corresponding one-dimensional local modes and the elastic energy flow are displayed in Figure
3(c) as well as the inset (black arrows). It is evident that the elastic energy flows of pseudospin states
evolve in the opposite directions albeit their phase distributions are the same. Furthermore, the 1D
localized states for the nontrivial cases emerge and decay rapidly away from the interface.
Fig. 3. Edge pseudospins and gapped helical edge states. (a) The dispersions of the bulk (grey curves)
and edge (red curves) states for supercells with boundaries along the z directions between the two PnCs
with θ=±45°, respectively. (b) The dispersions for supercells with boundaries along the z directions
between the two PnCs with θ = -25° and 50°, respectively. (c) elastic displacement profiles for the edge
states marked by the red and blue triangle marks in a (a). (d) elastic displacement profiles for the edge
states marked by the red and blue cross marks in a (b). Poynting vectors (black arrows) shown in the
inset of (c) and (d).
The pseudo-Kramers double degeneracy is preserved under the glide operation [𝐺𝑥 ≔ (𝑥, 𝑧) →
(
𝑎
2
+ 𝑥,
𝑎
2
− 𝑧) and 𝐺𝑧 ≔ (𝑥, 𝑧) → (
𝑎
2
− 𝑥,
𝑎
2
+ 𝑧)] near the interface (black dotted box) in Figs. 3(a)
and 3(c). When the glide symmetries are lifted, the elastic edge states are no longer gapless and a bandgap
is opened up at the kz=π/a point as shown in Fig. 3(b). Such gapped edge states resembling the edge
states in QSHIs can be well described by the 1D massive Dirac equations [53,54]. For instance, an
omnidirectional band gap at the original degenerate point is formed along the edges between the two
PnCs with θ=-25° and 50°. These one-dimensional local modes corresponding to the cross marks, as well
as the elastic energy flow directions are shown in Fig. 3(d). Analogous to the case in (c), the energy flow
directions are reversed between 𝜙III,IV
−
and 𝜙III,IV
+
even though the phase distributions of the two modes
remain unchanged. The dispersions of the lower edge states have much smaller group velocity and hence
much longer propagation time over the same distance. Therefore, the lower edge states are suppressed
and the dispersion resolution is reduced considerably. However, because the glide symmetries are broken
on the edges, the edge states of pseudo-spin up and down are coupled and mixed each other which can
be envisioned as a remnant effect of the pseudo-spin-momentum locking for helical edge states in QSHIs
[52].
Fig. 4. The visualization of corner states in a metastructure. (a) The CAD drawing of a metastructure
with outer PnCs (red, θ=-25°) and inner PnCs (blue, θ=50°). The enlarged corner structure is presented
in the inset. (b) Eigenmodes calculation of the metastructure with the same parameters in Fig. 1. Corner
states are represented by blue dots in a red dotted box. (c) The elastic energy distribution of the four
corner states in (b).
Corner states in in a hierarchy of dimensions. -- We now extend the discussion from the previous
hybrid structure to a squared meta-structure as shown in Fig. 4(a). Here, the bulk-edge-corner
correspondence is manifested in a hierarchy of dimensions: the bulk topology leads to the edge states,
while the edge topology leads to the corner states, as shown in Figs. 3(b) and 4(a) representing the
smokinggun feature of SOTIs. The corner states in a box-shaped geometry is formed by the two PnCs
with θ=-25° and θ= 50° and arise due to the breaking of glide symmetry in C4-symmetric topological
crystalline insulators [55]. The frequencies of eigenmodes with absorbing boundary condition in the x
and z directions to avoid the formation of standing waves are shown in Fig. 4(b). The four corner states
emerge in the edge bandgap labeled by the blue points in the red dotted box with the frequencies
33.96MHz, 33.97MHz, 33.98MHz, 34.01MHz, respectively. It is worth mentioning that there is a
frequency difference between every two corner states in the elastic-wave system, unlike the degeneracy
occurring in the photonic system [31]. The elastic field (polarized in the y direction) distribution shown
in Fig. 4(c) clearly demonstrates that these four states are strongly localized at four corners of the box-
shape boundary in the meta-structure, indicating the subwavelength character of the corner states.
Fig. 5. The study on the robustness of the corner states. (a) and (b) The CAD drawing of a metastructure
with cavity and disorder on the bottom-right corner. In the inset of (a) and (b), the enlarged defect
structures are presented. The red stars are the positions where the exciting sources are applied on. (c), (d)
and (e) The elastic energy distribution of the square metastructure without defect, with cavity and
disorder, respectively.
Robustness of the topological corner states. -- In this section, we perform a systematic study on the
robustness of the corner states against defects based on simulations. Here we consider the excitation
under a source (an initial displacement along the y direction) near to the bottom-right corner as shown
by the red stars in Figs 5(a) and 5(b), for a sample with 2222 unit cells (the same as that used in Fig.
4(a)) to reduce the finite size effect. The pristine structure has a box geometry with θ=-25° and θ=50°
and the corresponding elastic energy distribution are shown in Fig. 4(a) and Fig. 5(c), respectively. The
two types of defects are introduced on the corner including the cavities and disorder. Cavities are modeled
by removing four scatters in the bottom-right corner of the blue area as shown in the inset of Fig. 5(a),
and the corresponding elastic energy distribution is shown in Fig. 5(d). The case of disorder is shown in
the inset of Fig. (b) where θ is changed from 50° to -25° in the bottom-right corner of the blue region
with the corresponding elastic energy distribution in Fig. 5(e). It is found that the elastic energy near the
topological corner states is well localized and not scattered to the one-dimensional boundary or the
interior of the PnCs as the conventional edge/corner states [56]. And the robustness of the corner states
against various defects is fully confirmed in our calculations.
Fig. 6. Hierarchical structure of topological insulating phases. (a) The hierarchical structure with three
sampling positions of bulk (red), corner (black) and edge (blue). The red star represents the exciting
sources. (b) Local energy intensity calculated at bulk, edge, and corner points as depicted in (a). The bulk,
corner, and edge eigenstates from the numerical calculation are represented by red, black, and blue
waterfall maps, respectively. We provide the visualization of (c) bulk state at 31.22 MHz, (c) corner state
at 34.01 MHz, (d) edge state at 37.80 MHz, and (e) bulk state at 41.13 MHz with the excitation source
placed at the bottom-right corner of the meta-structure.
Hierarchical topological insulating phases. -- To further verify the coexistence of 1D topological
edge states and 0 D topological corner states, we excite the eigenstates from 30MHz to 45MHz as
shown in Fig. 6. The local energy intensity for bulk, edge, and corner points (denoted by respective red,
blue, and black dots in Fig. 6(a)) are obtained from the averaged values of the energy distributions at
each point. The red star represents the exciting sources. The spatial distributions of the states
corresponding to the respective frequency points 1-4 exhibit a bulk-corner-edge-bulk evolution as we
sweep the excitation frequencies. In Fig. 6(d), the energy strength around the 0D corners is rather strong,
while the energy strength on the 1D boundaries as well as 2D bulk of the structure (except from the
source) are relatively weak, which is consistent with the characteristics of the SOTI phases. Similarly,
the energy strength of the 2D bulk of the meta-structure in Fig. 6(e) is significantly suppressed,
representing the gapped 2D bulk states. In contrast, a strong field strength at the 1D boundaries signaling
the presence of the gapped 1D edge states is apparently visible. Since the 1D boundary and the 0D corner
states coexist at the point 3, the two resultant peaks in the elastic energy nearly overlap as shown in Fig.
6(b). These features conform with the traditional bulk-boundary correspondence and the definition of the
first-order topological insulators.
Conclusions. -- In summary, we here demonstrate a 2D SOTI in elastic PnCs and visualize both 1D
topological edge states and 0D subwavelength corner states by modulating the crystalline symmetry in a
square lattice. Meanwhile, our realization is based on PnCs with elastic modulus varying with periodicity,
which have wider bandgap than that composed of a single material. The hierarchical structure of
topological insulating phases is observed in a topological nontrivial configuration [57]. Moreover, the
coexistence of different dimensional topological boundary states can serve as a basis for designing
topological switch circuits between crystalline insulators and HOTIs [1]. Our work exhibits a good ability
to control the elastic wave propagation in an unprecedented way and provides a platform to design the
new type of elastic topological devices which can topologically transform the elastic wave energy among
bulk, edge, and corner modes by utilizing advanced microfabrication technology [58].
This work was supported by the National Natural Science Foundation of China (Nos. 11674175,
11874222, and 11704193) and "333" Project of Jiangsu Province (No. BRA2017451).
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|
1904.10197 | 2 | 1904 | 2019-05-07T14:56:24 | Ultrafast depinning of domain wall in notched antiferromagnetic nanostructures | [
"physics.app-ph",
"cond-mat.mes-hall"
] | The pinning and depinning of antiferromagnetic (AFM) domain wall is certainly the core issue of AFM spintronics. In this work, we study theoretically the N\'eel-type domain wall pinning and depinning at a notch in an antiferromagnetic (AFM) nano-ribbon. The depinning field depending on the notch dimension and intrinsic physical parameters are deduced and also numerically calculated. Contrary to conventional conception, it is revealed that the depinning field is remarkably dependent of the damping constant and the time-dependent oscillation of the domain wall position in the weakly damping regime benefits to the wall depinning, resulting in a gradual increase of the depinning field up to a saturation value with increasing damping constant. A one-dimensional model accounting of the internal dynamics of domain wall is used to explain perfectly the simulated results. It is demonstrated that the depinning mechanism of an AFM domain wall differs from ferromagnetic domain wall by exhibiting a depinning speed typically three orders of magnitude faster than the latter, suggesting the ultrafast dynamics of an AFM system. | physics.app-ph | physics | Ultrafast depinning of domain wall in notched antiferromagnetic nanostructures
Z. Y. Chen1, M. H. Qin1,*, and J. -- M. Liu2
1Institute for Advanced Materials, South China Academy of Advanced Optoelectronics and
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,
South China Normal University, Guangzhou 510006, China
2Laboratory of Solid State Microstructures and Innovative Center for Advanced
Microstructures, Nanjing University, Nanjing 210093, China
[Abstract] The pinning/depinning of antiferromagnetic (AFM) domain wall is certainly the
core issue of AFM spintronics. In this work, we study theoretically the Néel-type domain wall
pinning and depinning at a notch in an antiferromagnetic (AFM) nano-ribbon. The depinning
field depending on the notch dimension and intrinsic physical parameters are deduced and
also numerically calculated. Contrary to conventional conception, it is revealed that the
depinning field is remarkably dependent of the damping constant and the time-dependent
oscillation of the domain wall position in the weakly damping regime benefits to the wall
depinning, resulting in a gradual increase of the depinning field up to a saturation value with
increasing damping constant. A one-dimensional model accounting of the internal dynamics
of domain wall is used to explain perfectly the simulated results. It is demonstrated that the
depinning mechanism of an AFM domain wall differs from ferromagnetic domain wall by
exhibiting a depinning speed typically three orders of magnitude faster than the latter,
suggesting the ultrafast dynamics of an AFM system.
Keywords: antiferromagnetic dynamics, domain wall, lattice defect, pinning effect
Email: [email protected]
Antiferromagnetic (AFM) materials are promising for next generation of spintronic
devices and attract substantial attention especially because they have strong anti-interference
capability and promised ultrafast magnetic dynamics.1-8 As a frontier and highly concerned
issue for advanced spintronics, the domain wall (DW) dynamics of antiferromagnets is under
extensive investigation. Specifically, several stimuli have been proposed to drive the domain
wall motion, including the Néel spin-orbit torques,9-10 spin waves,11-12 temperature
gradients13-15 and so on.16-18 These works provide useful information for future AFM storage
device design.
Nevertheless, most of these works discuss models on perfect samples and the wall
pinning caused by disorder and local defects is neglected. As a matter of fact, the wall pinning
may play an important role in magnetic dynamics. On one hand, for a realistic spintronic
device where inhomogeneity and lattice defects are inevitable, the wall dynamics could be
significantly affected and the wall pinning/depinning becomes the limited step for device
operation. For example, it was reported that electrical current induced switching of AFM
domains in CuMnAs occurs only in localized regions, strongly suggesting the important role
of wall pinning.19 Given these reasons, a clarification of the underlying mechanisms for wall
pinning/depinning becomes essential. On the other hand, artificial lattice defects such as
notches with proper shape could be used in discretizing domain wall position and enhancing
its stability against thermal fluctuations and stray fields in potential race-track memory and
logic devices.20-24 Therefore, the dynamics of AFM domain wall pinning/depinning appears to
be one of the core issues for application potentials and basic research of AFM spintronics.
Fortunately, the domain wall pinning in ferromagnetic systems have been extensively
investigated, and the accumulated experience can be partially transferred to the study of AFM
domain dynamics.25-32 For a ferromagnetic domain wall, the depinning field can be
analytically obtained by minimizing the total energy, demonstrating the critical role of notch
geometry in pinning the wall.26 More interestingly, the dependence of depinning field on the
Gilbert damping for a ferromagnetic system has been revealed in micromagnetic simulations,
and the damping constant, if small, can reduce the depinning field, contrary to the general
expectation that they should be independent of each other.27 This phenomenon not only
reveals the complexity of domain wall pinning, but more importantly provides a method of
domain wall manipulation. However, as far as we know, few work on the pinning/depinning
of an AFM domain wall has been available, while this issue is certainly more important than
and distinctly different from the case of ferromagnetic wall.
In proceeding, we may discuss the domain wall pinning/depinning for an AFM
nanostructure with a notch, without losing the generality, while the calculation methods and
main conclusions apply to antiferromagnets with other lattice defects. For simplicity
consideration, such a notch has a rectangular section, as shown in Fig. 1(a). We can derive the
depinning field hdep as a function of the notch size and uniaxial anisotropy in a simplified
framework and the theory agrees well with numerical simulations in large damping systems.
Moreover, it will be shown that the depinning field gradually increases to a saturation value
with increasing damping constant, and this prediction allows one to modulate the damping
constant through elaborately material design, so that the domain wall depinning can be in turn
effectively controlled. In order to understand the underlying physics better, we perform the
analytical calculation based on the one-dimensional model which reveals the important role of
the internal domain wall dynamics. Our work also proposes a depinning mechanism for an
AFM wall different from ferromagnetic wall. This new mechanism allows the depinning
speed to be typically three orders of magnitude faster than that for a ferromagnetic wall
depinning.
We start from the domain wall pinning at a rectangular notch for an AFM nanoribbon.
This nanoribbon is geometrically defined by length l along the z-axis, width w, and thickness
tl, as shown in Fig. 1. We discuss the scenario of current induced Néel spin-orbit torques (or
staggered effective field), as demonstrated in CuMnAs and Mn2Au for driving the domain
wall motion, i.e. the wall is typically of the Néel type.6,8-9 For this scenario, the model
Hamiltonian is given by33-34
,
(1)
where A0 = 4JS2/a is the homogeneous exchange constant with AFM coupling J > 0, spin
length S and lattice constant a, m is the total magnetization m = (m1 + m2)/2S with m1 and m2
the AFM sublattice magnetizations, A = 2aJS2 is the inhomogeneous exchange constant, n is
the staggered magnetization n = (m1 m2)/2S, L0 = 2JS2 is the parity-breaking parameter, Kz
2200222zzzAKAHLnhnmnnmn = 2K0S2/a is the anisotropy constant along the z-axis in the continuum model with anisotropy
constant K0 in the discrete model, γ is the gyromagnetic ratio, = S/a is the density of the
staggered spin angular momentum per unit cell, h is the staggered effective field and nz is the
z component of n. Here, the notch has its width d and depth wN, as depicted in Fig. 1(a).
Noting that m is just a slave variable of n,33 and we eliminate m by m = L0n/A0 and
obtain
,
(2)
where A* = A L2
0 /A0 is the effective exchange constant. As shown in the Supplementary
Materials for the detailed derivation, the depinning field hdep, based on this Hamiltonian
model, can be solved strictly after a similar derivation26
,
(3)
where S is the saturation moment. It's noted that for an ultra-thin nanoribbon, the depinning
field is independent of thickness. As clearly indicated in Eq. (3), hdep depends on several
parameters including the anisotropy constant K0 and the w/wN ratio. Thus, the devices with
various depinning fields could be designed through modulating ratio w/wN and/or choosing
appropriate materials.
In order to check the validity of Eq. (3), we also perform the numerical simulations based
on the atomistic Landau-Lifshitz-Gilbert (LLG) equation,14
,
(4)
where Si is the normalized atomic spin at site i, is the damping constant, Hi = μ-1
S ∂H/∂Si is
the effective field. Without loss of generality, l = 120a, tl = a, w = 8a, K0 = 0.02J, d = 4a, wN =
2a and = 0.02 are selected, as shown in Fig. 1.
Fig. 1 presents the spin structures of the nanoribbon for various h. Here, the Néel-type
AFM domain wall is clearly pinned at the notch at h = 0 and the spin configuration is
symmetric around the notch due to the absence of chirality, as shown in Fig. 1(a). The spins
on the wall mid-plane are aligned in parallel to the x-axis and perpendicular to those spins
*222zzzKAHnhnnn02/2/1SdepNKhww21iiiiitSSHSH inside the AFM domains aside.
When a small h is applied along the z-axis, the wall slightly shifts toward the right side,
as seen from the delicate change of the spin configuration. With increasing h, those spins on
the left side of the notch mid-plane tend to rotate towards the negative z-axis while those on
the right side of the notch mid-plane tend to rotate towards the x-axis, as shown in Fig. 1(b)
and 1(c), a consequence of the wall depinning from the notch. The wall depinning becomes
clear in Fig. 1(c) where the wall mid-plane deviates clearly from the notch mid-plane. The
spin configuration after the full wall depinning from the notch is shown in Fig. 1(d).
Subsequently, we investigate the dependences of hdep on the notch geometry and several
physical parameters including the anisotropy and damping constants. The calculated curves
(analytical) from Eq. (3) plus the simulated results (numerical) based on the LLG dynamics,
Eq. (4), for different values of notch depth wN, nanoribbon thickness w, anisotropy constant
K0, and damping constant () are plotted in Fig. 2(a) ~ (d) respectively. Several features
deserve highlighting here. First, the model calculated curves and numerically simulated data
on dependences hdep(wN), hdep(w), and hdep(K0) respectively show qualitatively similar
tendencies, suggesting that Eq. (3) can describe roughly these dependences although
quantitative difference between the model and simulation appears for each dependence.
Second, qualitative difference between the model and simulation appears for function hdep(),
as shown in Fig. 2(d). While the model suggests independence of hdep on damping constant ,
the numerical simulation reveals that hdep is remarkably dependent of in the small regime.
hdep shows a gradual growth with until the large regime where hdep becomes saturated, i.e.
independent of in the large regime. The difference between Eq. (3) and simulated results
for hdep() is understandable since the LLG damping is a time-dependent effect. It is noted
that the internal dynamics of domain wall is completely neglected in deriving Eq. (3), while
this dynamics becomes particularly remarkable in the small regime where the
time-dependent spin oscillation can be significant due to the weak damping. Therefore, the
model prediction Eq. (3) becomes invalid and the underlying physics should be reconsidered.
In order to uncover the intriguing physics, we need to track the domain wall evolution. In
proceeding, we first define the position of a domain wall. Similar to the well-studied
skyrmions, the position of a domain wall is estimated by q(t)35
,
(5)
where q is the coordinate of the wall mid-plane. Given this definition, one starts with the
one-dimensional model with inclusion of the internal dynamics of domain wall motion.28-29
The Hamiltonian density for this model reads33
,
(6)
where the pinning effect from the notch is described by potential energy V(z).
Subsequently, we study the Lagrangian density L = K -- H1D with K = m∙(ṅ × n) is the
kinetic energy term introduced by the Berry phase, and ṅ represents the derivative with
respect to time.33,36-37 Then, we eliminate m with m = ( ṅ n L0∂zn)/A0,33 and obtain
,
(7)
It is noted that the Rayleigh function density R = ṅ2/2 is introduced into the
Lagrangian formalism in order to describe the dissipative dynamics.36-37 Following the earlier
work, we assume a robust domain wall structure which can be described by n = [sech((z
q)/)cosΦ, sech((z q)/)sinΦ, tanh((z q)/)],36 where the azimuthal angle Φ of the wall is
introduced as the collective coordinates. After substituting the domain wall ansatz and
applying the Euler-Lagrange equation, we obtain the equation of motion for variables q and
Φ,
and
,
,
(8)
(9)
It is noted that the first term in Eq. (8) describes the wall inertia and other terms represent
the forces exerted respectively by the damping , pinning potential ε(q), and current-induced
effective magnetic field h. By substituting the initial condition Φ(0) = dΦ/dtt = 0 = 0 into Eq.
(9), one obtains Φ(t) = 0, consistent with the fact that an AFM domain wall is confined in the
easy plane due to the antiparallel arrangement of neighboring spins.
11zzzndxdzqndxdz222010222zDzzzzAKAHLnhnVzmnmn2*2220222zzzzKALnhnVzAnn200dqqhAdq200A For simplicity, we assume a parabolic potential23,29
,
(10)
where KN is the elastic constant and LN is the radius of the potential well. After substitutions
and necessary simplification, the equation of motion for q is updated to
,
(11)
where G = A0/, hN = γA0h/, and N = (A0KN/2)1/2 is the natural angular frequency of the
free harmonic oscillator. Here, we can see the existence of domain wall oscillation if damping
constant is small. This oscillation is the major reason for the invalid prediction of the
depinning field by Eq. (3).
Noting that Eq. (11) describes the damping oscillation of a domain wall, one has the
solution for < c = 22aN/JA0 representing the under-damped oscillation:
,
(12)
where p = (2
N G2/4)1/2 is the oscillating angular frequency of the wall, and C1, C2 are
integral constants depending on the initial condition.
For better illustration, the simulated q(t) curves based on the LLG equation at various
damping constant are plotted in Fig. 3(a), benefiting to discussion. For > 0.005, one
observes the domain wall oscillation around the equilibrium position with an attenuating
amplitude. Moreover, the oscillation amplitude is enhanced with the decreasing . Finally, for
< 0.005, when the maximum displacement of the wall oscillation, defined as Δqmax = q(t) -
q(0)max, exceeds the height of the pinning potential,29 the wall would successfully depin from
the notch and propagates freely along the nanoribbon.
As demonstrated in Eq. (12), the displacement of the wall oscillation consists of the
oscillatory part (AS) and stationary part (qeq),29 and its maximum value is approximately given
by
,
(13)
where p ≈ N is obtained for < c. In this case, since Δqmax decreases exponentially with
, larger external field is required to generate the wall displacement for the wall depinning.
As Δqmax > LN, the wall eventually depins from the notch.
22/2/2NNNNNqLKqqKLqL20NNqGqqh212cossin/GtppNNqteCtCth21arctan//22212max+/pGCCSeqNNqAqeCCh Noting that the pinning potential parameters including KN and LN are unknown, we need a
reasonable estimation of them by fitting the simulated results based on Eq. (13). As shown in
Fig. 3(b) where the simulated furthest position of the domain wall, qmax, as a function of , is
plotted. The excellent fitting of the simulated data by Eq. (13) on the other hand further
confirms the validity of our theory.
Since the oscillating amplitudes C1 and C2 are proportional to external or current induced
field h, one can introduce the field-independent parameters c1 = C2/C1, c2 = (C2
1 +C2
2 )1/2/h for
brevity. Subsequently, the depinning field under the condition Δqmax = LN is obtained:
,
(14)
Similar fitting approach can be used to estimate LN. As shown in Fig. 2(d), the simulated
results coincide very well with Eq. (14) with one adjustable variable LN, demonstrating the
important role of the domain wall oscillation in the domain wall depinning. Such an
oscillation behavior is one character of the internal dynamics for a AFM nanoribbon with a
notch.
Finally, we would like to address the significance of the present results. It is known that
the performance of domain wall based race-track memory not only depends on the wall
motion velocity, but also relies on the wall depinning time. It is clearly shown here that an
AFM domain wall depinning is distinctly different from that of a ferromagnetic domain wall.
For a ferromagnetic nanoribbon, the wall oscillation is related to the wall internal angle which
is mainly determined by the internal fields including magnetocrystalline anisotropy and
Dzyaloshinskii-Moriya (DM) exchange.27 Generally, the depinning time is inversely
proportional to the magnitude of internal fields and has a typical value of ~ 1.0 ns.22-24,27
However, for an AFM system, the wall oscillation stems from the second-order derivative of
DW position q with respect to time rather than the azimuthal angle of the DW, as clearly
illustrated in Eq. (8). Since the derivative originates from the strong AFM exchange
interaction between two sublattices which is about three orders larger than the anisotropy and
DM exchange, one is sure that the depinning time for such an AFM domain wall should be
three orders of magnitude shorter than a ferromagnetic one. It implies a surprisingly short
depinning time of ~ 0.001 ns for CuMnAs with the Néel temperature TN ≈ 480 K, a ≈ 3.8 Å
1arctan/2/pNdepGcNLhecK and μS ≈ 3.6 μB,38 where μB is the Bohr magneton. While it is well believed that the AFM
domain switching is faster than ferromagnetic domain switching, the present work presents a
quantitative estimation of the domain wall depinning time, direct evidence with this
well-believed but not yet well-evidenced claim.
In conclusion, we study theoretically the domain wall pinning and depinning at a notch in
an AFM nano-ribbon. The depinning field depending on the notch dimension and intrinsic
physical parameters are derived theoretically and also simulated based on the LLG equation.
Contrary to the conventional conception, the remarkable dependence of the depinning field on
the damping constant is revealed, which attributes to the time-dependent oscillation of the
DW position in the small damping region. A one-dimensional model considering the internal
dynamics of DW is investigated theoretically to explain perfectly the simulations. More
importantly, our work also demonstrates the different depinning mechanism of an AFM DW
from FM DW which may result in a depinning speed typically three orders faster than the
latter, demonstrating again the ultrafast dynamics of an AFM system.
Acknowledgment
We sincerely appreciate the insightful discussions with Zhengren Yan, Yilin Zhang and
Huaiyang Yuan. The work is supported by the National Key Projects for Basic Research of
China (Grant No. 2015CB921202), and the Natural Science Foundation of China (No.
11204091), and the Science and Technology Planning Project of Guangdong Province (Grant
No. 2015B090927006), and the Natural Science Foundation of Guangdong Province (Grant
No. 2016A030308019).
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FIGURE CAPTIONS
Fig.1. (color online) Equilibrium spin structures around the notch in the AFM nanoribbon
with lattice sizes l × w × tl under (a) h = 0, (b) h = 0.002J/μS, (c) h = 0.004J/μS, and (d) h =
0.00458J/μS. The color represents the magnitude of the z component of the staggered
magnetization nz, and the position of the DW center is depicted by the black dashed lines.
Fig.2. (color online) Numerical (empty circles) and analytical (blue solid line) calculated
depinning field as a function of (a) the depth of the notch wN, (b) the width of the nanoribbon
w, (c) the anisotropy constant K0, and (d) the damping constant . The red solid line in (d) is
the fitting results based on Eq. (14).
Fig.3. (color online) (a) The DW position as a function of time for various damping constants
under h = 0.0039J/μS. (b) Numerical (empty circles) and analytical (solid line) calculated
maximum displacement of the DW as a function of under h = 0.0039J/μS.
Fig.1. (color online) Equilibrium spin structures around the notch in the AFM nanoribbon
with lattice sizes l × w × tl under (a) h = 0, (b) h = 0.002J/μS, (c) h = 0.004J/μS, and (d) h =
0.00458J/μS. The color represents the magnitude of the z component of the staggered
magnetization nz, and the position of the DW center is depicted by the black dashed lines.
Fig.2. (color online) Numerical (empty circles) and analytical (blue solid line) calculated
depinning field as a function of (a) the depth of the notch wN, (b) the width of the nanoribbon
w, (c) the anisotropy constant K0, and (d) the damping constant . The red solid line in (d) is
the fitting results based on Eq. (14).
Fig.3. (color online) (a) The DW position as a function of time for various damping constants
under h = 0.0039J/μS. (b) Numerical (empty circles) and analytical (solid line) calculated
maximum displacement of the DW as a function of under h = 0.0039J/μS.
Supplementary material for
"Depinning of domain walls in notched antiferromagnetic nanostructures"
Z. Y. Chen1, M. H. Qin1,*, and J. -- M. Liu2
1Institute for Advanced Materials, South China Academy of Advanced Optoelectronics and
Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials,
South China Normal University, Guangzhou 510006, China
2Laboratory of Solid State Microstructures and Innovative Center for Advanced
Microstructures, Nanjing University, Nanjing 210093, China
A. Derivation of the depinning field
The model Hamiltonian density reads
After eliminating m with m = L0n / A0, we obtain
. (1)
. (2)
In the following, we use the same method with Ref. 24 to derive the depinning field for AFM
DWs. At low temperatures, we introduce the Lagrange multiplier ξ to take into account the
constraint condition n·n = 1, and then construct a new function
, (3)
where fot is the sum of the anisotropy and Zeeman energy. Using the variational method, we
obtain
, (4)
where lex = (aA* / J)1/2 is the exchange length in AFM systems, ni is the xi component of n (xi
*[email protected]
2200222zzzAKAHLnhnmnnmn*222zzzKAHnhnnn*12otAFdVfnnnn2220otexiiiflnnn = x，y，z). To eliminate ξ, we take the product of Eq. 4 and sum over i and obtain
. (5)
Transforming Eq. 5 with the identity
and we obtain
, (6)
. (7)
To eliminate the space-dependent variables, we take the summation over the whole regions of
the sample Ω,
, (8)
where ∂Ω is the boundary of Ω. Considering the boundary conditionni = 0, we have
. (9)
Substituting the configuration of the system into Eq. 9 and we obtain
. (10)
Then the magnitude of the current-induced effective field is given by
, (11)
where <nzEF>, <nzCD> are the average z components of n on surfaces EF and CD, respectively.
The depinning field represents the minimum field to move a DW, and in other words, the
maximum field that Eq. 11 has a stationary solution. Thus, critical condition is the key to
deriving the depinning field. Similar to the earlier work, we consider the critical condition
<nzEF> = 0, <nzCD> = 1 in our derivation, whose validity is confirmed in Fig. 1(c) in the
manuscript. After substitutions and simplifications, we obtain the depinning field of AFM
220iotexijjnflnxx2212jjjgggggxxx2212iexiiotexijjnlnnflnxx22212iiexiiotexiexijjjnndVlnnfdVlndlnxxxS2211022exiiotexiiotGHEFCDABdVlnnfdxdylnnfz2122lexiiotlCDEFtdylnnfhtw2122/lexiianCDEFlNNzEFzCDtdylnnfhtwwwnn . (12)
DWs
2/2/1zSdepNdhww |
1909.01242 | 1 | 1909 | 2019-08-27T06:28:06 | Carbon Nanotube Fabrication at Industrial Scale: Opportunities and Challenges | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | Careful research on different materials reveals that the material properties are mostly affected by the size of it. Material size down to nanometer scale exhibits some remarkable properties, resulting in unique physical and chemical characteristics. In todays world of nanotechnology, carbon nanotubes (CNTs) have become a high priority material because of their exclusive structure, novel characteristics with enormous potential in many technological applications. Till date chemical vapor deposition (CVD) is the preferred and widely used technique among different CNT growth methods, because of its potential advantage to produce CNTs of high purity, large yield with ease of scale up and low setup cost. This article provides an overview of different CVD methods for industrial scale fabrication of CNTs. The influence of material aspect, viz. catalyst type, catalyst support, and growth control aspect, viz. process temperature, pressure, catalyst concentration, are discussed. Additionally, possible growth mechanisms concerning CNT formation are described. Finally, the key challenges of the process are addressed with future perspective. | physics.app-ph | physics | Carbon Nanotube Fabrication at
Industrial Scale: Opportunities
and Challenges
Joydip Sengupta
Department of Electronic Science, Jogesh Chandra Chaudhuri College, Kolkata, West Bengal, India
9.1 INTRODUCTION
9.1.1 Importance of Nanomaterial
The discovery of new materials with unique properties is
the principal parameter for the sustained development of
contemporary devices and for upliftment of device perfor-
mances. In the last decade, intensive research efforts were
made to create a large number of novel materials, notably
those belongs to the nanometer regime. The outcome of the
prolific research are the structures with reduced dimension,
viz. two-dimensional structure, one-dimensional structure,
and zero-dimensional structure. As the size of a material
reduces to nanometer-scale dimensions then the material in
general become superior to its bulk counterpart for many
applications owing to its higher surface-to-volume ratio,
size-dependent properties, and its potential for downscaling
of device size.
Among different elements, Carbon, placed at group 14
(IV A), has become one of the most important elements
in the periodic table owing to its ability to form sp3, sp2,
and sp hybrids which results in 3D (diamond and graph-
ite), 2D (graphene), 1D [carbon nanotube (CNT)], and 0D
(Fullerene) materials with a wide variety of physical and
chemical properties (Fig. 9.1).
9.1.2 Carbon Nanotube
Among the carbon allotropes, CNT has become a center
of attraction in the field of nanoscale research in modern
science. Nanotubes are nearly one-dimensional structure
due to their high length to diameter ratio. CNTs exhibit a
unique combination of electronic, thermal, mechanical,
and chemical properties [2 5], which promise a wide
range of potential applications in key industrial sectors
such as nanoelectronics [4], biotechnology [6], and ther-
mal management [7]. From a historical perspective tubu-
lar carbon nanostructures were first observed Fig. 9.2(A)
as early as 1952 by Radushkevich and Lukyanovich [8].
A few years later Oberlin et al. [9] published clear images
Fig. 9.2(B) of hollow carbon fibers with nanometer-scale
diameters using a vapor growth technique. However, it
was not until nearly two decades later, when Iijima [10]
reported the observation of CNTs in the journal of Nature
that worldwide interest and excitement was generated.
Iijima's work is certainly responsible for the flare-up of
interest
in CNT research in the scientific community
which resulted in the rapid development of this field.
Iijima clearly observed the multiwalled CNTs (MWCNTs)
while studying the soot made from by-products obtained
during the synthesis of fullerenes by the electric arc
discharge method (Fig. 9.3).
Since then the field has advanced at a breathtaking
pace that is reflected in the increasing number of publica-
tions along with many unexpected discoveries.
9.1.3 Chemical Vapor Deposition (CVD)
There are many methods by which CNTs can be pro-
duced, including but not limited to arc discharge, laser
ablation, and chemical vapor deposition (CVD). These
three synthesis methods of CNT can be classified into two
main categories depending on the growth temperature.
High temperature routes are the electric arc method and
the laser ablation method, whereas medium temperature
routes are based on CVD processes. The high temperature
process involves sublimation of graphite in an inert atmo-
sphere and condensing the resulting vapor under a high
temperature gradient. The difference between the various
FIGURE 9.1 Carbon allotropes in four different crystallographic struc-
tures [1].
FIGURE 9.3 Transmission electron microscopy images of CNTs syn-
thesized by Iijima [10]. CNTs, carbon nanotubes.
processes is the method used for subliming graphite. An
electric arc formed between two electrodes is used for
sublimation of graphite in case of the arc discharge
method. An ablation induced by a laser is used for subli-
mation of graphite in case of the laser ablation technique.
Previously, high-temperature processes were used as the
primary methods for synthesizing good quality CNTs.
However, both methods have major disadvantages.
Firstly, both methods require high purity graphite rods,
consume ample amounts of energy, and yield is also low.
So, these methods are not commercially viable to scale up
for CNT production at an industrial
level. Secondly,
CNTs grown by high-temperature methods are in highly
twisted forms, assorted with unwanted species of carbon
and metal. Thus the grown nanotubes are hard to clean,
manipulate, and accumulate for construction of CNT-
based device architectures. Controlled production on
substrates with preplanned CNT structures has not been
possible by these vaporization methods. These necessitate
the application of CVD process by which all the above
mentioned drawbacks can be overcome. CVD permits
abundance of hydrocarbons in several state (solid, liquid,
or gas), facilitates the use of different substrates, and
harvests CNT in a variety of forms (powder, films), also
in different shapes (straight, bamboo-like, coiled). Even
site selective growth of in situ metal filled CNT growth
on patterned substrate is possible with CVD, which
proves the versatility of the method. Thus the present
work focuses on CVD synthesis since this method can be
easily extended to industrial-scale fabrication.
FIGURE 9.2 Examples of transmission electron microscopy images of
CNTs published by (A) Radushkevich et al. [8]; (B) Oberlin et al. [9].
CNTs, carbon nanotubes.
9.1.4 Basic CVD Process
In CVD process initially all gaseous species are removed
(called purging) from the reaction chamber other than
those required for the deposition. Afterwards the precur-
sor gases (hydrocarbon; denoted as CH) are delivered into
the reaction chamber and heated (by energy source) as it
approaches the deposition surface. When the precursor
gas molecules acquire sufficient energy then they react or
decompose to form a solid phase of carbon (C) which is
readily deposited onto the substrate. Finally the volatile
by-product hydrogen (H) is removed from the reaction
chamber by an exhaust system (Fig. 9.4). In absence of
substrate the solid phase of carbon is deposited on the
walls of the reaction chamber.
9.2 OVERVIEW OF DIFFERENT CVD
METHODS FOR INDUSTRIAL SCALE
FABRICATION OF CNT
CVD methods can be categorized based on chamber pres-
sure, reactor type, carbon source and heating method. A
complete tree of different CVD categories is depicted in
Table 9.1.
CH (vapor)
C (solid)
Substrate
Heater
H (vapor)
FIGURE 9.4 Schematic representation of a CVD process. CVD, chemi-
cal vapor deposition.
9.2.1 CVD Techniques Based on Reactor
Pressure
Pressure is an important parameter as far as CVD method
is concerned. Based on CNT synthesized by CVD at dif-
ferent pressure, the methods can be categorized as high-
pressure CVD (HPCVD), atmospheric-pressure CVD
(APCVD), and low-pressure CVD (LPCVD).
9.2.1.1 High-Pressure Chemical Vapor
Deposition (HPCVD)
In this type of CVD the pressure inside the reactor is
more than 1 atm during the synthesis of CNTs (Fig. 9.5).
The high-pressure carbon monoxide (CO) decomposition
technique (abbreviated as HIPCO) was developed for the
mass production of single-walled CNTs (SWCNTs) by
Smalley's group [11] at Rice University in the year 1999.
According to the definition given by the Royal Society of
Chemistry high-pressure carbon monoxide method is "A
synthesis method for carbon nanotubes that involves mix-
ing high pressure (e.g., 30 atmospheres) CO that has been
C) and a catalyst precursor gas (metal
preheated (1000
carbonyl or metallocene). Under these conditions the pre-
cursor decomposes forming metal particle clusters on
which carbon nanotubes nucleate and grow. The carbon
nanotubes are 99% single-walled carbon nanotubes with
small diameters (e.g., (5,5) tubes)." In this process, high
temperature exposure of the catalyst particle and the high
pressure of CO result in rapid disproportionation of CO
molecules into C atoms, thus forming SWCNTs in accel-
erated manner.
A similar high-pressure technique was adopted by
Resasco et al. [13] for the production of SWCNTs by cat-
alytic disproportionation of CO in the presence of a
unique Co Mo solid catalyst and the process is known as
CoMoCAT. In CoMoCAT method the SWCNTs were
TABLE 9.1 Types of CVD Techniques Employed for CNT
Synthesis
synthesized by CO disproportionation at 700 950
C
using a flow of pure CO in the presence of Co Mo cata-
lyst at a pressure of 1 10 atm. It is to be noted that a
gaseous catalyst is used in the HIPCO process whereas a
supported catalyst is used in the CoMoCAT process.
9.2.2 Atmospheric-Pressure Chemical Vapor
Deposition (APCVD)
In this synthesis method at atmospheric pressure the sub-
strate is exposed to one or more volatile precursors which
react or decompose on the surface of the substrate to pro-
duce a deposit (Fig. 9.6). In 1993, Yacama´n et al. [14]
reported the synthesis of carbon microtubules by catalytic
decomposition of acetylene (C2H2) over Fe particles at
C. Aligned CNT growth was demonstrated in 2006
700
by Wei et al. [15] using Co as catalyst, C2H2 as carbon
feedstock, and NH3 as reaction control gas at 750
C.
They concluded that NH3 to C2H2 flow rate ratio and
thickness of the catalyst film determines whether the
CNTs would be vertically aligned or randomly oriented.
Showerhead
(delivers pure CO
at 1000-1100C)
Injector inlet
delivers room
temp CO +
Fe(CO)5
Mixing/
reaction
zone
CO inlet
to showerhead
preheater
Output from
reactor
(SWNT in CO)
to product
collection
FIGURE 9.5 Schematic representation of experimental setup (HIPCO
reactor) used by Bronikowski et al. [12] for synthesis of CNT. CNT, car-
bon nanotube.
FIGURE 9.6 Schematic representation of experimental setup used by
Sengupta et al. [16] for synthesis of CNT. CNT, carbon nanotube.
of
Fe/Mo/Co/Al2O3 5 5/3/1/80
Majewska et al. [17] exhibited a one-step method to
synthesize CNTs filled with continuous Co nanowires in a
conventional gas-flow system at the temperature of 400
C by methane (CH4) decomposition at atmo-
and 800
spheric pressure. Yun et al. [18] prepared highly aligned
arrays of MWCNT on layered Si substrates using Fe as
catalyst. They found that addition of water vapor to the
reaction gas mixture of hydrogen (H2) and ethylene
(C2H4) accelerated the growth rate leading to the synthe-
sis of longer CNT arrays with higher density. Cao et al.
[19] used CVD to synthesize SWCNTs by employing a
mixture of Fe/Mo/Co as catalyst, Al2O3 as substrate, and
C2H2 as a carbon source. They demonstrated that the opti-
mum growth occurs at a growth temperature of 750
C,
Ar/H2/C2H2 flow rates of 420/100/14 sccm, and a catalyst
(wt%).
composition
Sengupta [20] and his coworkers also synthesized filled
and unfilled MWCNTs by APCVD of propane (C3H8) on
C using Ni- or Fe-coated Si substrate. They
Si at 850
found that
the nanotubes with magnetic material filling
depict ferromagnetic behavior providing interesting possi-
bilities for further applications in many potential areas, such
as magnetic recording media. Patel et al. [21] prepared
boron-filled hybrid CNT (BHCNT) using a one-step CVD
C under Ar and CH4 flows of 100 and
process at 950
10 sccm, respectively. Synthesized BHCNTs were up to
31% stiffer
conventional
MWCNTs in radial compression and exhibited excellent
mechanical properties at elevated temperatures. Li et al.
[22] demonstrated highly consistent synthesis of CNT for-
C by decoupling the catalyst annealing and
ests at 775
hydrocarbon exposures using movement of the sample in
and out of the CVD system and stabilizing the moisture and
hydrocarbon concentration between the two steps. Bi-layer
catalyst Fe/Al203 was deposited using sputtering on oxide-
coated Si wafers and C2H4 was used as source of carbon.
233% stronger
than
and
9.2.3 Low-Pressure Chemical Vapor
Deposition (LPCVD)
In this type of CVD the pressure in reaction chamber is
less than 1 atm (Fig. 9.7). Liao et al. [23] synthesized
SWCNTs using decomposition of C2H4 at low pressure
(10 mTorr) over Fe particles supported on Si wafers at
C. Ikuno et al. [24] performed selective
temperature 550
fabrication of straight CNT bridges between Fe nanoparti-
cles by LPCVD using C2H4 at a low pressure of 100 Pa in
the temperature range of 800 970
C. Resultant CNTs
were composed of bundled SWCNTs and MWCNTs.
Cantoro et al. [25] synthesized SWCNTs by CVD of
undiluted C2H2
low pressure
22 mbar). Experimental results revealed that NH3 or
(,10
H2 exposure promotes nanostructuring and activation of
subnanometer Fe and Al/Fe/Al multilayer catalyst films
C under
350
at
Thermocouple
Furnace Quartz tube
Gases
Pump
FIGURE 9.8 Schematic illustration of the hot wall CVD furnace [31].
CVD, chemical vapor deposition.
9.2.4.1 Hot Wall Chemical Vapor Deposition
(Hot Wall CVD)
In hot wall CVD the reactor tube is surrounded by heat-
ing elements thus the temperature of the substrate is
same as the reactor wall (Fig. 9.8). In general, for exo-
thermic reactions the hot wall reactor is preferred as the
high temperature of reactor wall restricts unwanted
deposition on it. The great advantage of hot wall CVD
is temperature uniformity. However as the reactor wall
temperature is quite high thus vapor can chemically
react with the reactor wall and create contamination in
the grown product. Zhang et al. [29] used a hot wall
reactor to carry out the CVD process to grow SWCNTs
by decomposition of CH4 on ultrathin Ni/Al
film-
C. High quality
coated Si substrates at temperature 800
double wall CNTs (DWCNTs) with a defined diameter
C
distribution were synthesized from alcohol at 940
employing hot wall CVD by Gru neis et al.
[30].
Catalysts for the DWCNT growth were made from
Co and Mo acetates.
forests
Ayala et al.
of SWCNTs
temperatures 900 1000
(Millimeter-thick
[32] prepared high quality N-doped
SWCNT and DWCNT with a defined diameter from a
nondiluted C/N feedstock benzylamine (C7H9N) vapor
using ceramic supported bimetallic catalysts containing
C. A "super
Mo and Fe at
growth"
of
SWCNTs) was performed by Noda et al. [33] at tempera-
C using Fe/Al2O3 catalysts on Si wafer employ-
ture 820
ing C2H4 as carbon feedstock. Sugime et al.
[34]
investigated optimum catalytic and reaction conditions
using a combinatorial catalyst library and also identified
high catalytic activity areas on the substrate by mapping
the CNT yield against the orthogonal gradient thickness
profiles of Co and Mo. Yamada et al. [35] synthesized
CNTs from 1.5 nm Fe thin film deposited onto 50 nm
SiO2 nanoballs placed on a transmission electron micro-
C using C2H4 as carbon source
scope (TEM) grid at 750
to study the effect of addition of water during the growth
of nanotube.
FIGURE 9.7 Schematic representation of experimental setup used by
Liao et al. [23] for synthesis of CNT. Legend is as follows: A, IR pyrom-
eter; B, mass flow controller; C, Si substrate, D, Fe wire; E, throttle
valve; and F, turbo pump.
before growth, resulting in SWCNT formation at lower
temperatures. Chen et al. [26] demonstrated that using fer-
rocene Fe(C5H5)2 as a catalyst precursor, cyclohexane
(C6H12) as carbon source, H2 as carrier gas, and thiophene
(C4H4S) as promoter, the pressure of 15 kPa, temperature
of 650
C and H2 flow rate of 60 sccm is the optimized
condition for the synthesis of high quality MWCNTs.
Kasumov et al. [27] synthesized SWCNT at pressures
down to 0.5mbar with C2H2 at temperatures 800 1000
C
on Al/Fe-coated Si3N4 membranes supported on Si sub-
strate, without any gas flow at any point of the entire pro-
cess, including the heating and cooling of the samples.
This procedure differs from other low pressure technique
flow for
where the synthesis proceeds
5 30 minutes. C2H2 is introduced in the sample chamber
in the gas
by single injection followed by fast evacuation.
High-density aligned CNT was synthesized by Wang
C at a
et al. [28] on Fe-coated quartz substrate at 900
pressure of 500 Torr. Their study showed that such high-
density aligned nanotube has great potential of use for
advanced nanoelectronics and analog/radio frequency
(RF) applications.
9.2.4 Reactor Type
Based on temperature of the reactor wall, CNT synthesis
by CVD process can be categorized as hot wall and cold
wall CVD.
the
9.2.4.2 Cold Wall Chemical Vapor Deposition
(Cold Wall CVD)
In the cold wall CVD process only the substrate is heated
by RF induction or high-radiation lamps while the reactor
wall remains cold (Fig. 9.9). This type of CVD is primar-
ily used for
endothermic deposition reaction.
Compared to hot wall reactor this method requires shorter
heating cooling time and smaller growth periods and
also prevents contamination of the chamber walls as walls
are remain cold. Moreover, here only the sample needs to
be heated, not the entire reactor. Thus, power and gas
consumption is much lower than hot wall CVD process.
Cold wall CVD is better suited to in situ optical monitor-
ing than hot wall CVD, which may become an important
advantage in the effort to better understand the growth
process. However, temperature uniformity is the parame-
ter of concern as there will always be cold surfaces that
can conduct heat away thus creating a temperature gradi-
ent. Finnie's group [36] used the cold wall CVD tech-
nique to grow SWCNTs using CH4 as source for carbon
C. Later
and Fe as catalyst on Si wafer at temperature 900
on they optimized the process [37] by studying the effects
of pressure, temperature, substrate conditioning, and metal-
lization. They also fabricated single-nanotube field effect
transistors and reported the factors affecting device yield.
Chiashi et al. [38] studied the cold wall CVD generation of
high-purity SWCNTs from alcohol with Fe/Co particles
supported on zeolite by Joule heating of a Si base plate at
C. Cantoro et al. [25] reported surface-
temperature 850
bound growth of SWCNTs at
temperatures as low as
C by catalytic CVD from undiluted C2H2 using Fe-
350
coated Si substrate. Maruyama et al. [39] studied SWCNT
growth from Pt catalysts using a nozzle injector for the eth-
anol gas supply in a high vacuum. They grew SWCNTs at
C by optimizing the
temperatures ranges from 330 to 700
ethanol pressure and also demonstrated that the optimal
ethanol pressure to obtain the highest SWCNT yield can be
reduced if the growth temperature decreased.
9.2.5 Carbon Source
The catalyst is an important constituent for synthesis of
CNT by CVD. Catalyst can be introduced into the reactor
in various forms, e.g., solid, liquid, and gas. Based on the
physical form of the catalyst used the CVD process can
be categorized as solid source CVD (SSCVD),
liquid
source CVD (LSCVD), and gas source CVD (GSCVD).
9.2.5.1 Solid Source Chemical Vapor
Deposition (SSCVD)
The term "SSCVD" encompasses all the techniques which
employ only solid precursors as starting material for
the deposition process (Fig. 9.10). In a dual zone tubular
furnace the metallocene powder is kept in the first zone,
called the preheating zone (Tpre{Treac), and directly sub-
limated. The sublimation of powder forms metallocene
vapor which is transferred by a controlled carrier gas flow
into the second zone, i.e., reaction zone, where simulta-
neous decomposition of hydrocarbon and metallocene
powder results in the growth of CNTs. Grobert et al. [40]
described a way of generating films of aligned Fe-filled
CNTs with enhanced magnetic
in the
430 1070-Oe range. The material was synthesized by
pyrolysis of Fe(C5H5)2/C60 mixtures at 900 1050
C
under Ar flow using a conventional two-stage furnace.
Muller et al. [41] synthesized Fe-filled aligned CNTs on
oxidized Si substrates precoated with thin metal layers
(Fe, Co) which act as secondary catalysts by thermal
decomposition of ferrocene in an Ar flow, and discussed
the CNT growth mechanism. Haase et al. [42] used
coercivities
(A)
(B)
FC
FC
H2
CH4
TP
P
SP
FIGURE 9.9 Cold wall CVD schematic:
schematic
(approximately to scale) and (B) gas flow schematic [37]. CVD, chemi-
cal vapor deposition.
reactor
(A)
(A)
T
pre
Preheater
Transport
gas
(B)
T
reac
Substrate
Substrate holder
Main reaction
zone
Exhaust
FIGURE 9.10 Schematic representation of SSCVD experimental setup
used by Weissker et al. [44] for synthesis of CNT. SSCVD, solid source
chemical vapor deposition; CNT, carbon nanotube.
SSCVD method to grow CNTs consisting of 20 30 walls
with inner diameters of 10 20 nm with length varies
from 10 to 30 μm. Later on the CNTs are filled with
Carboplatin (a second generation cytostatic drug) to fabri-
cate a CNT-supported drug delivery system of chemother-
apeutic agents. Boi et al. [43] devised a new two-stage
SSCVD approach, constituting a perturbed-vapor method
C using ferrocene, followed by a post-
of synthesis at 900
C that produce MWCNTs
synthesis annealing at 500
filled with α-Fe nanowires.
9.2.5.2 Liquid Source Chemical Vapor
Deposition (LSCVD)
In LSCVD only liquid precursor is used as primary mate-
rial for the deposition process (Fig. 9.11). For the synthe-
sis of CNT a hydrocarbon is used as a liquid precursor in
which the metal catalyst compounds (e.g., metallocenes)
are dissolved. Afterwards the precursor solution is intro-
duced in the preheating zone of the dual zone CVD reac-
tor having a temperature sufficient to atomatize the liquid
precursor solution. Later on the atomatized precursor is
transported to the reaction zone of the furnace using the
flow of a suitable carrier gas. The simultaneous decompo-
sition of both the hydrocarbon and the metallocene at the
reaction zone produces CNTs.
Andrews et al. [45] synthesized high-purity aligned
MWCNT via the catalytic decomposition of a Fe(C5H5)
C8H10 mixture over quartz substrates using Ar H2 mix-
used the spray pyrolysis of Fe(C5H5) benzene mixture to
ture as transport gas at 675
C. Kamalakaran et al. [46]
synthesize thick and crystalline nanotube arrays in an Ar
C, here H2 was not required. Strong
atmosphere at 850
vertically aligned Fe-filled MWCNTs were synthesized
using decomposition of Fe(C5H5)2 in LSCVD process by
Hampel et al. [47]. The filling yield was about 45 wt%
and magnetometry measurements exhibited high magneti-
zation moments, high coercivities, and strong magnetic
anisotropies with an easy magnetic axis parallel to the
aligned nanotubes. Peci et al. [48] devised a simple
approach for production of continuous α-Fe nanowires
encapsulated by MWCNTs of length greater than 10 mm
through thermal decomposition of Fe(C5H5). Nagata et al.
[49] prepared Fe-filled CNTs with Fe(C5H5)2 as a precur-
C. The vertically oriented
sor on Si substrate at 785
CNTs were almost completely filled with Fe. It was
experimentally observed that coercivity of the Fe-filled
CNTs can be enhanced by the addition of a Pt layer to the
Fe catalyst film.
9.2.5.3 Gas Source Chemical Vapor Deposition
(GSCVD)
The term "GSCVD" covers all strategies using only gas-
eous precursors as initial material
the deposition
for
(Fig. 9.12). Here unlike SSCVD or LSCVD a single zone
chamber is used and the gaseous precursor is directly
introduced into the reaction chamber. The catalyst coated
substrate is placed inside the chamber at high temperature
sufficient to decompose the precursor in the presence of
catalyst resulting in the growth of CNT. Zhao et al. [50]
prepared horizontally aligned SWCNT arrays uniformly
distributed all over the quartz substrate using nucleation
of Cu nanoparticles on quartz as catalysts and CH4 as car-
bon feedstock. They concluded that this kind of SWCNT
arrays has great advantage in building large-scale inte-
grated circuits. Ahmad et al. [51] used a combination of
Fe, Ni, and Cr as catalyst for the synthesis of CNTs at dif-
ferent growth temperatures (600 750
C), keeping the
ratio of C2H2:N2 at 1:10 sccm. They concluded that the
strength of epoxy resin improves with doping of well dis-
persed CNTs. Zheng et al. [52] synthesized SWCNTs
directly on flat substrates using CVD method with CO
and H2 mixture as feeding gas. Monodispersed Fe/Mo
nanoparticles were used as catalyst and SiO2/Si, Al2O3,
and MgO as substrates. The results showed that the for-
mation of SWCNTs is greatly enhanced by addition of
H2. Kiribayashi et al. [53] studied the effects of fabrica-
tion method of Al2O3 buffer layer on Rh-catalyzed growth
of SWCNTs by alcohol-gas-source CVD and found that
the largest SWCNT yield could be achieved when Al2O3
layer is prepared by EB deposition of Al2O3, however no
SWCNTs were grown on the Al2O3 layer obtained by
native oxidation of the Al layer.
Precursor
solution
Transport
gas
(A)
T
pre
(B)
T
reac
Substrate
Substrate holder
Exhaust
Preheater
Main reaction
zone
FIGURE 9.11 Schematic representation of LSCVD experimental setup
used by Weissker et al. [44] for synthesis of CNT. LSCVD, liquid source
chemical vapor deposition; CNT, carbon nanotube.
Thermocouple
Quartz tube
Exhaust
Furnace
Catalyst bed
N2 H2 NG
Water bubbler
FIGURE 9.12 Schematic representation of GSCVD experimental setup
used by Awadallah et al. [54] for synthesis of CNT. GSCVD, gas source
chemical vapor deposition; CNT, carbon nanotube.
FIGURE 9.13 Schematic diagram of thermal CVD apparatus used by
Lee et al. [62] for synthesis of CNT. CVD, chemical vapor deposition;
CNT, carbon nanotube.
9.2.6 Heating Methods/Source
When a traditional heat source such as resistive or induc-
tive or infrared heater is used for deposition process, then
the method is called thermal CVD (TCVD). If a plasma
source is used to create a glow discharge then it is called
plasma-enhanced CVD (PECVD).
9.2.6.1 Thermal Chemical Vapor Deposition
(TCVD)
In this synthesis method a substrate coated with catalyst
is placed in a thermally heated atmosphere and exposed
to one or more volatile precursors, which react or decom-
pose on the surface of the substrate to produce a deposit
(Fig. 9.13). For the synthesis of CNTs one or more hydro-
carbon precursor are used and they decompose in the
presence of one or more catalysts to produce CNTs. Lee
et al. [55] synthesized aligned CNTs on transition metal-
coated (Co Ni alloy) Si substrates using C2H2 with a
flow rate of 15 40 sccm for 10 20 min at the tempera-
ture of 800 900
C. They observed that pretreatment of
Co Ni alloy by HF dipping and etching with NH3 gas
prior to the synthesis was crucial for vertical alignment.
Later on Lee et al. [56] used the same technique with Fe-
coated Si substrate to grow aligned bamboo-shaped
CNTs. Yoa et al. [57,58] studied the Si substrate/nanotube
film interface in great detail and synthesized CNTs on
C by TCVD
them. CNT films were grown at 750 and 900
with C2H2 and H2 on Si(0 0 2) wafers precoated with (Fe,
Si)3O4 particles. At 750
C the reduction of the (Fe,Si)3O4
particles catalyzed the growth of a dense and aligned
C a random growth of
MWCNT film but CVD at 900
predominantly MWCNTs with
density was
obtained. Tripathi et al. [59] synthesized CNTs on Al2O3
substrate with diameter distribution 6 8 nm without using
any catalyst by decomposition of acetylene (C2H2) at
[60] synthesized aligned
800
Fe Co
using Fe(C5H5)2/Co
(C5H5)2 mixture on oxidized Si substrates via TCVD at
C. The encapsulated metal nanowires had diameters
980
of 10 20 nm and a length of up to a few micrometers.
Reddy et al. [61] devised a single-step process for the
synthesis of good-quality SWCNTs, MWCNTs, and
metal-filled MWCNTs in large quantities by a TCVD
C. Kozhuharova et al.
alloy-filled MWCNTs
lower
y
Inlet
x
Flux
Tungsten-halogen lamps
Quartz walls
Outlet
WAFER
Quartz pin
Pyrometer
FIGURE 9.14 Schematic diagram of the single wafer RTCVD process
chamber [67]. RTCVD, rapid thermal chemical vapor deposition.
technique, in which alloy hydride particles obtained from
the hydrogen decrepitation technique was used as
catalysts.
9.2.6.2 Rapid Thermal Chemical Vapor
Deposition (RTCVD)
It is a synthesis methodology where a rapidly heated sub-
strate is exposed to one or more volatile precursors, which
react and decompose on the surface to provide a deposit
(Fig. 9.14). Here heating is achieved using infrared lamps,
which makes the heating and cooling of the samples
much faster. Typical duration for an RTP process is much
less compared to a normal TCVD process which helps to
minimize the thermal budget. When the heating lamps are
energized then the irradiation (wavelength) passes through
the quartz tube without being absorbed, while it
is
absorbed by the substrate. Thus, only the substrate heats
up but its surroundings remain close to room temperature.
Mo et al. [63] synthesized SWCNTs and MWCNTs on
Ni/Al2O3 catalyst by thermal cracking of C2H2/H2 at
C for 30 minutes with a gas flow rate of 10/100 sccm
600
using a rapid TCVD (RTCVD). Based on the experimen-
tal observations they concluded that the grown CNTs fol-
lowed the tip growth mode and the CNT growth was
mainly due to the formation of a fluidized (liquid)
metastable NixC, i.e., metastable eutectic by dissolution
of carbon, its oversaturation, and diffusion. Martin et al.
[64] examined the relation between CVD process and
CNT growth by placing the catalyst inside the pores of
AlPO4-5 and L-type zeolites using a RTCVD setup.
C under atmospheric pres-
CNTs were synthesized at 800
sure in the presence of CH4 and H2. They demonstrated
that vacuum pretreatment and H2 pretreatment of catalyst
determine the growth morphology of carbon structures.
C
Later on the same group [65] synthesized CNT at 800
in a RTCVD system using CH4 and H2 as the main pro-
cess gases and used them for batch fabrication of CNT
[66]
transistors. Chun et al.
field effect
synthesized
MWCNTs by RTCVD using decomposition of C2H2 over a
liquid catalyst solution (Fe Mo/MgO/citric acid) at 700
C
for 30 minutes. The thin MWCNTs showed the low turn-on
field about 3.35 V/μm and the high emission current density
of 1.0 mA/cm2 at the biased electric field of 5.9 V/μm.
9.2.6.3 Hot Filament Chemical Vapor
Deposition (HFCVD)
The HFCVD process employs a heated filament
to
decompose the precursor species and deposit a film on
the substrate, which is placed close to the filament at
lower temperature (Fig. 9.15). For the synthesis of CNTs
a hydrocarbon is decomposed using a filament of refrac-
tory metal which is resistively heated at very high temper-
ature. The type and quality of the synthesized CNTs are
significantly influenced by the filament
temperature.
Chen et al. [68] synthesized well aligned bamboo shaped
CNTs by HFCVD on Ni film-coated Si substrate using
C2H4/NH3 gas source with a flow rate of 25/100 sccm,
while the total ambient pressure of the chamber was kept
around 2.7 kPa. Diameter-controlled growth of SWCNTs
was demonstrated by Kondo et al. [69] using Fe as cata-
lyst and C2H2 as carbon feedstock at 590
C. Aligned
CNTs growth on Inconel sheets was carried out using
HFCVD in a gas mixture of CH4 and H2 by Yi et al [70].
The experimental results revealed degree of alignment of
CNTs increased with the size of the catalyst particle and
optimum alignment was achieved at a bias of 2500 V.
Choi et al. [71] studied hot filament effects on growth of
vertically aligned CNTs (VACNTs) with respect to feed-
stock composition, filament
temperature, and filament
types. They used mixtures of methane and hydrogen as
feedstock and found that growth rate increases with the
increasing concentration of methane in the feedstock irre-
spective of filament temperatures and types. They also
found that tungsten filaments were more efficient at the
C for CNT growth than tan-
filament temperature of 2050
talum. Chaisitsak et al. [72] synthesized both SWCNT
To diaphragm pump
Valve
W filament
Quarts
substrate
Alcohol
Reactor
Reservoir
FIGURE 9.15 Schematic diagram of the HFCVD apparatus used by
Okazaki et al. [74] for synthesis of CNT. HFCVD, hot filament chemical
vapor deposition; CNT, carbon nanotube.
and MWCNT from C2H2 and H2 mixture employing
silica-supported Fe Co as catalyst, by HFCVD method
with a carbon filament. They found that formation of
SWCNT is favored at low C2H2 concentration and low
reaction pressure. Yilmaz et al. [73] demonstrated the
growth of VACNTs in a planar configuration (48 μm tall)
and a micropatterned array with 36-μm tall CNTs on Al
substrates. They achieved the desired growth by combin-
ing conventional microfabrication steps for patterning an
array and methane as carbon source for CNT synthesis.
9.2.6.4 Plasma-Enhanced Chemical Vapor
Deposition (PECVD)
PECVD employs electrical energy to create glow dis-
charge plasma. In glow discharge plasma the electron
temperature is much higher than ion temperature which
felicitates the maintenance of glow discharge plasma at
low temperature. The high-energy electrons promotes the
dissociation of gas molecules by which the energy is
transferred into a gas mixture. This transforms the gas
mixture into reactive radicals, ions, neutral atoms, and
molecules, and other highly excited species. These atomic
and molecular fragments interact with a substrate and,
depending on the nature of these interactions, either etch-
ing or deposition processes occur at the substrate. Since
high-energy electrons supply the energy needed for chem-
ical reactions in the gas phase, the gas itself is relatively
cooler. Hence, film formation can occur on substrates at a
lower temperature than is possible in the conventional
CVD process, which is a major advantage of PECVD.
Moreover, in PECVD a high-electric field is generated in
the sheath region due to potential difference between the
plasma and the substrate.
PECVD reactors are mainly classified by the type of
plasma source used to generate the gas discharge of the
feedstock, i.e., direct current (DC), RF, and microwave
(MW) PECVD.
9.2.6.5 Direct Current Plasma-Enhanced
Chemical Vapor Deposition (DC-PECVD)
DC-PECVD employs DC power to generate glow discharge
plasma between the anode and cathode, placed parallel to
each other in a reactor (Fig. 9.16). A negative DC voltage
is applied to the cathode to generate plasma and it also gen-
erates high-electric field in the sheath region between the
substrate and the plasma. Tanemura et al. [75] used DC-
PECVD to synthesize aligned CNTs on Co- or Ni-coated
tungsten wires using mixtures of C2H2 and NH3 and finally
optimized the process with respect to wire temperature,
wire diameter, gas pressure, and sample bias. They con-
cluded that the selective feeding of positive ions to tip of
CNTs is responsible for the alignment of growing CNTs.
Kim et al. [76] prepared regular arrays of freestanding
FIGURE 9.16 Schematic diagram of the DC-PECVD growth reactor
used by Abdi et al. [83] for synthesis of CNT. DC-PECVD, direct cur-
rent plasma-enhanced chemical vapor deposition; CNT, carbon nanotube.
C with a base pressure below 10
single CNTs using Ni dot arrays deposited on planar Si sub-
26 Torr. C2H2
strate at 550
and NH3 were used as the carbon source and etchant gases.
Abad et al. [77] synthesized CNTs both on bare stainless
steel and on cobalt colloid nanoparticles coated stainless
steel using C2H2:NH3 gas mixture at 650
C. Ngo et al. [78]
studied thermal interface properties of Cu-filled VACNT
arrays prepared by DC-PECVD. Hofmann et al. [79] syn-
thesized CNTs on Ni-coated SiO2/Si substrate using a mix-
ture of C2H2 and NH3 and studied the effect of temperature
on the growth rate and the structure of the CNTs. VACNTs
C which prom-
were grown at temperatures as low as 120
ised the huge potential of the process to grow CNTs onto
low-temperature substrates like plastics, and facilitate the
integration in sensitive nanoelectronic devices. A hot fila-
ment suspended in the plasma is often integrated with the
DC-PECVD system to grow CNTs [80 82]. This filament
acts as a source of electron to stabilize plasma discharge
and also as a heating source of the substrate. However, this
approach restricts the possibility of low temperature growth
and may act as a source of contamination. In general DC
sources use most of the input power to accelerate the ions
while ideally maximum power should be used to generate
the reactive species in the bulk phase. Thus the high applied
voltage in case of DC-PECVD may lead to substrate dam-
age resulting from high energy ion bombardment.
9.2.6.6 Radio Frequency Plasma-Enhanced
Chemical Vapor Deposition (RF-PECVD)
RF-PECVD uses RF power to generate plasma [84]. RF
(commonly 13.56 MHz) power is supplied to the reactor
using an impedance matching network between the power
supply and the plasma. The RF discharges remains opera-
tive at sub-Torr pressure levels and the bias voltage devel-
oped on the electrode is far smaller than the bias voltage
of DC discharges. Depending on the method of coupling
of the power supply to the plasma, RF plasma discharges
are classified into two types (Figs. 9.17 9.19), namely,
FIGURE 9.17 Schematic diagram of the CCP-RF-PECVD system used
by Man et al. [92] for synthesis of CNT. CCP-RF-PECVD, capacitively
coupled plasma radio frequency plasma-enhanced chemical vapor depo-
sition; CNT, carbon nanotube.
FIGURE 9.18 Schematic diagram of ICP-RF-PECVD reactor used by
Meyyappan et al. [93] for synthesis of CNT. ICP-RF-PECVD, induc-
tively coupled plasma radio frequency plasma-enhanced chemical vapor
deposition; CNT, carbon nanotube.
capacitively coupled plasma (CCP) [85] and inductively
coupled plasma (ICP) [86]. Electrode configuration of
CCP is similar to that of the DC-PECVD system however
CCP RF-PECVD uses an RF power supply. The ICP sys-
tem has a coil placed outside the reactor and RF power is
supplied to the inside of the reactor from the coil through
a dielectric window. Poche et al. [87] used CCP RF-
PECVD to grow vertical field-aligned CNTs on Si wafer
exhibiting a "herring-bone" and a "bamboo-like" structure
C using Ni as a catalyst. Yuji et al. [88] used ICP
at 560
RF-PECVD to synthesize bamboo-like CNTs with the
arrowhead shape. Yen et al.
[89] prepared aligned
MWCNTs fully filled with Fe, Co, and Ni by ICP-CVD
using nanowires as catalysts. A modified RF-PECVD sys-
tem, namely magnetically enhanced RF-PECVD system
[90],
is also used for CNT synthesis. This system
Quartz
window
Observation
port
Microwave antenna
Gas inlet
Plasma
Optical emission
Spectroscopy
Substrate
Heated graphite susceptor
Stepping
motor
Mechanical pump
FIGURE 9.20 Schematic representation of the MW-PECVD apparatus
used by Qin et al. [102] for the synthesis of CNT. MW-PECVD, micro-
wave plasma-enhanced chemical vapor deposition; CNT,
carbon
nanotube.
MW-PECVD. By adjusting the length of the exposed
Cu electrodes they controlled the concentration of the Cu
atomic clusters in plasma and then in the final products.
9.2.6.8 Remote Plasma-Enhanced Chemical
Vapor Deposition (Remote PECVD)
It is possible to extract the plasma away from where it is
generated, and ion-induced damage may be reduced when
the wafer is located "remotely (Fig. 9.21)." One approach
is to extract the plasma through a hole in the bottom elec-
trode and place the wafer in a substrate holder further
below [103]. Li et al. [104] used a remote RF plasma
with either a monolayer of ferritin or 0.1 nm Fe layer as
catalyst, and grew SWCNTs ranging between 0.8 and
1.5 nm in diameter. Min and coworkers [105,106] also
used a remote PECVD system with a bimetallic CoFe
(B9:1) layer having 0.9 2.7 nm in thickness. SiO2 and
Al2O3 layers were grown as diffusion barriers on glass or
Si substrates. A water plasma with CH4 gas, enabled a
C for growing SWCNTs which
lower temperature of 450
yielded dense nanotubes in the 1 2 nm diameter range.
Fukuda et al. [107] succeeded in the CNT growth on the
Al2O3/Fe/Al2O3 substrates on which no CNTs were
grown by conventional TCVD. Ismagilov et al. [108] pre-
pared layers of aligned MWCNTs on Si substrate without
a metal catalyst by deposition from a CH4/H2 gas mixture
activated by a DC discharge.
9.3 MATERIAL AND GROWTH CONTROL
ASPECTS
9.3.1 Catalyst Type
The pathways for the synthesis of CNTs by CVD can be
categorized into catalytic and noncatalytic methods
FIGURE 9.19 Schematic diagram of magnetically enhanced RF-
PECVD used by Ishida et al. [94] for synthesis of CNT. RF-PECVD,
radio frequency plasma-enhanced chemical vapor deposition; CNT, car-
bon nanotube.
proficiently felicitates gas ionization in a magnetron-type
PECVD reactor. Hirata et al. [91] synthesized vertically
standing SWCNTs using this system by a mixture of
methane (CH4) and hydrogen (H2).
9.2.6.7 Microwave Plasma-Enhanced Chemical
Vapor Deposition (MW-PECVD)
In MW-PECVD MWs (2.45 GHz) are introduced into the
reactor through a dielectric window for irradiation of
gases for generation of plasma (Fig. 9.20). MW-PECVD
is capable to operate at a high pressure range and inde-
pendent biasing of the substrate is possible using a DC or
RF power supply. Tsai et al. [95] fabricated aligned CNTs
with open ends on Si wafer in one step using MW-
PECVD system with a mixture of CH4 and H2 as precur-
sors. Wong et al. [96] synthesized well-aligned MWCNTs
by MW-PECVD using N2 as the carrier gas and CH4 as
the carbon source. Thin Fe films with different thick-
nesses (0.5 5 nm) on Si substrates acted as catalysts and
grown CNTs showed a remarkable structural uniformity
in terms of diameter. Hisada et al. [97] employed MW-
PECVD to prepare single-crystal magnetic nanoparticles
encapsulated in CNTs using Fe Co catalytic layer on Si
and CH4 as carbon feedstock. Fujita et al. [98] produced
fully encapsulated Co nanorods in MWCNTs by MW-
PECVD using CH4 on Si. Zhi et al. [99] prepared GaN
nanowires encapsulated in CNTs using Fe-coated GaAs
substrate by decomposition of CH4. Hayashi et al. [100]
have successfully grown well-aligned Pd/Co-filled CNTs
with uniform diameter and length (1 m) on Si substrates
C using CH4 as carbon source. Zhang et al.
at 750
[101] developed a method to grow Cu-filled CNTs using
γB
γA
B
θ
γAB
A
γA
γB
θ
γAB
B
A
B
A
(I)
(II)
(III)
FIGURE 9.22 Conditions of the surface energies of substrate (A),
deposit (B) and interface A B in determining the type of growth: island
or Volmer Weber growth for (I) nonwetting; (II) wetting; and (III)
layer-growth [127].
micelle method [124], spin coating of catalytic solution
[125], etc. Cassell et al. [126] demonstrated a combinato-
rial optimization process
the quality of
MWCNTs produced by CVD. They constructed catalyst
composition libraries to understand the effect of catalyst
precursor composition on yield, density, and quality of
the
growth
experiments.
nanotubes with minimal
to assess
number
of
In the physical deposition technique, metal can be
evaporated or sputtered to be deposited on the substrate.
The metal, if deposited at room temperature, will gener-
ally be amorphous and form a nearly smooth film on the
surface of the substrate. Upon annealing, the equilibrium
shape may be reached. To know this shape, the Young's
equation describing a contact between two phases A and
B and the ambient atmosphere has to be considered:
γ
A
5 γ
AB
1 γ
Ucosθ
B
(9.1)
is
the
interface
corresponding
γ
where
(Fig. 9.22).
As θ-0;
B, in this case, the growth is
expected to occur layer by layer. When θi0;
1 γ
B
and discrete three-dimensional island-like clusters form as
shown in Fig. 9.22.
energies
-γ
1 γ
hγ
A
AB
γ
A
AB
γ
It was found that the catalyst must be deposited on the
substrate in the form of particles instead of smooth, con-
tinuous films [93] as continuous catalyst layer is unfavor-
able for CNT growth. Thus, the property of island growth
is required for obtaining nanoparticles on a substrate by
physical deposition. After deposition, usually performed
at room temperature, annealing allows the atoms to rear-
range themselves and reach the energetically most favored
configuration. This method has been widely used to
obtain nanoparticles of catalyst material to grow CNT.
For breaking up the thin film obtained after deposition,
many authors reported the use of NH3 [128] or H2 [129]
during annealing. The surface energies γ
B used
above are defined relative to the atmosphere gas and thus
a change in the gas can dramatically change the final
shape of B on A. Delzeit et al. [130] demonstrated that
introduction of a metal underlayer (such as Al) can be
used instead of any chemical pretreatment steps to create
A and γ
FIGURE 9.21 A schematic diagram of the remote PECVD system
used by Bae et al. [109] for synthesis of CNT. PECVD, plasma-
enhanced chemical vapor deposition; CNT, carbon nanotube.
[110 112]. In catalytic method the catalyst type can be
broadly classified into two groups. If the catalyst particles
are injected into the flowing feedstock to produce CNTs
in the gas phase then the catalyst is called floating or
unsupported catalyst [113]. In contrast, if the catalyst is
deposited on the substrate for synthesis of CNTs before
loading the substrate inside the reactor then it is called
supported catalyst [114].
fast
and
clusters
evaporates
In the unsupported catalyst approach, a volatile com-
pound containing the catalytic element [115,116], e.g., Fe
(CO)5, Fe(C5H5)2, or Ni(C5H5)2 is used as the catalyst
source. The nanotubes form in the vapor phase and con-
dense onto cold surfaces. However, the transition metal
sources vaporize at temperatures much lower than that for
the gas phase pyrolysis of the carbon sources and a two-
zone furnace is generally required to produce CNTs by
the unsupported catalyst approach. In this method, smaller
catalyst
usually
unstable while large clusters are also detrimental as it
favors graphitic overcoating. Thus it
is the contest
between several processes (clustering and evaporation)
that produce favorable size clusters [117]. Sen et al. [118]
first reported the unsupported catalyst approach and they
used Fe(C5H5)2 or nickolecene as a source of the transi-
tion metal and benzene as the carbon source. Cheung
et al. [119] reported the synthesis of nanocluster solutions
with distinct and nearly monodisperse diameters of 3.2, 9,
and 12.6 nm for three different protective agents used,
respectively. Addition of protective agents in the solution
prevented the nanoparticles from aggregation. Hence, for
large-scale continuous production of nanotubes, the float-
ing catalyst approach is suitable. But the major drawback
is that CNTs cannot be grown with site selectivity. Site
selective growth of CNTs is a prerequisite for several
device applications of CNTs.
The methods for the preparation of catalyst in case of
supported catalyst approach can be divided into two cate-
gories: one is solution-based catalyst preparation tech-
nique and the other is the physical evaporation technique.
There are numerous methods for preparing catalysts from
solutions, for example sol gel process [120,121], core-
duction of precursors [122], impregnation [123], reverse
a rough surface. Physical deposition techniques, such as
thermal evaporation [131], electron gun evaporation
[132], pulsed laser deposition [133], ion-beam sputtering
[134], and magnetron sputtering [135], were successfully
used for catalyst preparation.
A wide variety of catalytic species can be used to pro-
duce CNTs in CVD growth, based on their hydrocarbon
decomposition ability, carbon solubility, stability, mor-
phology, etc. Different transition metals (e.g., Fe, Ni, Co)
and their alloys (e.g., Fe Mo, Cu Co, Ni Ti) have been
extensively used to grow CNTs by CVD [136 139].
Noble metals [140] (e.g., Au, Ag), semiconductors [141],
diamond [142], sapphire [143], and even SiO2 nanoparti-
cles [144] behave as catalyst for nanotube growth. Deck
et al. [145] studied the catalytic growth of CNTs using a
broad range of transition metal catalysts in great detail.
They demonstrated that Fe, Co, and Ni were the only
active catalysts for CNT growth while Cr, Mn, Zn, Cd,
Ti, Zr, La, Cu, V, and Gd have no catalytic features. They
concluded that the solubility of the carbon in the metals is
primarily responsible for their catalytic activity. However,
metals like Cu, Pt, Pd, Mn, Mo, Cr, Sn, Au, Mg, and Al
have been used to grow CNTs as reported by Yuan et al.
[146]. Furthermore, recently in 2015, Hu et al. [147] syn-
thesized high density SWCNT arrays with ultrahigh den-
sity of 130 SWCNTs/μm by ethanol CVD using Trojan
catalyst, named by analogy with the soldiers emerging
from the Trojan horse in the Greek Story. These observa-
tions indicate that the catalyst-growth dynamics-feedstock
relation needs to be much explore in order to achieve
supreme control over the CNT synthesis.
9.3.2 Catalyst Concentration
Kumar et al. [148] varied the catalyst concentration in
zeolite from 1 to 50 wt % and observed that after a
threshold concentration (2.4 wt%) formation of SWCNTs
start and above 5 wt% of catalyst concentration growth of
MWCNT is favored. They achieved highest yield of
MWCNTs with negligible metal contamination using a
combined Fe 1 Co concentration of 40%. The authors
concluded that proper selection of catalyst materials and
their concentration is essential for selective growth of
SWCNTs or MWCNTs. Bai et al. [149] studied the influ-
ence of Fe(C5H5)2 concentration of on the growth rate of
the aligned CNTs. They observed that
initially with
increasing Fe(C5H5)2 concentrations the growth rate of
the aligned CNTs also increased up to a certain value
while the growth rate decreased with subsequent increases
in the ferrocence concentrations. They concluded that ini-
tially as the ferrocene concentration increases the avail-
ability of catalyst particle is also increased favoring the
growth of CNTs specially SWCNTs because of their (cat-
alyst) small size. However at higher ferrocene concentra-
tion the catalyst particles agglomerate and form large Fe
ferric
clusters having weaker catalytic effect. Cao et al. [150]
used Fe3O4 nanoparticles with varying concentrations
(0.01, 0.026, and 0.033 g/mL) as catalysts for the growth
of VACNTs at atmospheric pressure via catalytic decom-
position of acetylene (C2H2) and observed that CNTs
obtained using 0.026 g/mL of Fe3O4 had the highest uni-
formity, density, and length. Sangwan et al. [151] pre-
pared
different
concentrations (varying from 2 to 133 μg/mL) and used
them to synthesize CNTs using CH4, H2, and C2H4 on
oxidized Si substrate. They observed that at low concen-
trations density of CNTs increases linearly with concen-
tration, and becomes almost constant for concentrations
higher than 66 μg/mL and concluded that this method can
be used to produce CNTs densities over a broad range
varying from 0.04 to 1.29 CNTs/μm2.
solutions
nitrate
ten
of
9.3.3 Support
Various substrates like Si [152], SiC [153], graphite
[154], quartz [155], silica [156], alumina [157], aluminum
[158], magnesium oxide [159], calcium carbonate [160],
zeolite [161], NaCl [162], metallic alloy [163], etc. are
used in CVD for the growth of CNT. Chai et al. [164]
studied the effects of different support material such as
silica, titania, ceria, magnesia, alumina, zeolite, and cal-
cium oxide on CoO catalyst using CH4 as a carbon feed-
stock. They found that CoO/SiO2 catalyst shows the best
C.
performance with respect to carbon capacity at 550
Qingwen et al. [165] used SiO2, ZrO2, Al2O3, CaO, and
C
MgO as support material for the growth of CNT at 850
using methane as carbon precursor and Fe, Mo, or Ni as
catalyst. The experimental results revealed that MgO is
the best candidate as support in terms of efficient and
stable growth, scalable synthesis at low cost and easy
removal of the support. Their result revealed that
the
growth and orientation of CNT is also influenced by the
grain boundary, crystallographic orientation, or crystalline
steps of the support material. Su et al. [166] synthesized
SWCNT with preferred 2D orientations by CVD of meth-
ane and showed that locking orientations are separated by
on Si(1 1 1), reflecting the lattice
90
symmetry of the substrates. In contrast, Maret et al. [167]
synthesized CNTs on single crystal MgO(0 0 1) substrate
C by CVD using a mixture of CO and hydrogen,
at 900
with Co catalyst nanoparticles and the results revealed
that CNTs have formed along (110) direction. In 2011 He
et al. [168] fabricated MWCNTs in six orthogonal direc-
tions on spherical alumina microparticles by CVD of
xylene-acetylene mixture and concluded that "cube-like"
surface structure of the alumina particles is responsible
for such growth. Ghosh et al. [169] synthesized semicon-
ducting SWCNT with a narrow diameter distribution
between 0.67 and 1.1 nm by CVD on Pt-coated chemi-
C using ethanol gas.
cally treated graphene layers at 700
on Si(1 0 0) and 60
Since SWCNT and graphene both have excellent electri-
cal, mechanical, and thermal properties so this result can
pave the way towards future nanoelectronics. An interest-
ing study about the influence of substrate surface area on
the growth of CNT from ferrocene was investigated by
Osorio et al. [170] using alumina, silica, carbon black,
and zirconia powder as substrate. They concluded that the
chemical composition of the substrate does not play a rel-
evant role in the synthesis of CNTs, while the surface
area has an influence and as the surface area of the sup-
ports increases, the synthesis temperature of CNTs gets
lowered. Chhowalla et al. [171] investigated the growth
process conditions of VACNTs by DC-PECVD of C2H2-
NH3 mixture on Si using Ni as catalyst and indicated that
a barrier layer such as SiO2 is required to prevent silicide
formation. However, Nihei et al. [172] established the
reverse by synthesizing VACNTs directly on nickel sili-
cide employing MW-PECVD of CH4 H2 mixture. Due
to these contradicting results of substrates with catalyst
materials widespread use of underlayers came into exis-
tence. The interaction between catalyst and underlayer
materials are numerous and complex and the choice of
underlayer
for CNT synthesis.
Silicon oxide [173], magnesium oxide [174], and alumi-
num oxide [175] are among the most popular underlayer
materials for CNT growth.
is extremely critical
9.3.4 Temperature and Pressure
the
Lee et al. [176] synthesized VACNTs on Fe-deposited sil-
icon oxide substrates by TCVD of C2H2 gas at the tem-
perature range 750 950
C. The results exhibited that the
growth rate and the average diameter increases with
increasing growth temperature while the density of CNTs
decreases. Moreover, the relative amount of crystalline
graphitic sheets increases progressively with the growth
temperature and a higher degree of crystalline perfection
C. Li et al. [177] found that
can be achieved at 950
growth temperature strongly influence the structure and
yield of CNTs synthesized by CVD. With the increase of
temperature
from
completely hollow to bamboo-like structure at low gas
pressure of 0.6 Torr. While all the CNTs have bamboo-
like structure irrespective of temperature at high gas pres-
sure. Moreover, diameter of CNTs consistently increases
with temperature within the experimental conditions but,
at low gas pressure CNT diameter increases by increasing
the number of graphene layers of the walls, while at high-
er gas pressure, the CNT diameter gets larger by increas-
ing both the number of grapheme layers and the inner
diameters. The same group also studied the effect of pres-
sure in detail [178] and observed that reactor pressure
severely influence the CNT production yield within the
pressure range 0.6 to 760 Torr. Experimental
results
structure of CNTs
changes
the
depicted that bamboo-like CNT structure was grown at
high pressure whereas CNTs with completely hollow
cores were formed at low pressure. They also found that
with the increase of the gas pressure both the density of
the compartments and graphene layers constituting the
diaphragm in
bamboo-structured CNTs were
increased. Ganjipour et al. [179] synthesized CNTs on Si
substrates using a mixture of ethylene (C2H4) and H2
gases in the presence of a Ni catalyst at a temperature of
C and gas pressures ranging from 10 to 400 Torr
700
using DC-PECVD. It was observed that diameter of the
CNTs increased as the deposition pressure increases till
400 Torr and further increase in the pressure leads to
plasma degradation, and the growth can be paralyzed.
Singh et al. [180] synthesized aligned MWCNT on quartz
substrates by injecting a solution of ferrocene in toluene
in a temperature range 550 940
C. The experimental
revealed that within the
results
temperature range
590 850
C aligned CNTs were formed, with a maximum
C. The diameter and diameter distribution of
yield at 760
the CNTs increased with increasing temperature but
C diameter again decreases and alignment was
above 940
lost. Escobar et al. [181] synthesized MWCNTs by CVD
using Fe as catalyst, SiO2 as support, and acetylene
(C2H2) as carbon precursor. The investigation about depen-
dence of
structural and morphological properties of
MWCNTs on the partial pressure of acetylene (C2H2)
revealed that at low C2H2 concentration, MWCNTs were
more regular and with a lower amount of amorphous car-
bon than those synthesized with a high concentration.
Sengupta et al. [182] studied the effect of growth tempera-
C) on the growth of partially
ture (varied from 650 to 950
Fe-filled MWCNTs from propane decomposition on Si
substrate with evaporated Fe layer using APCVD tech-
nique. The experimental results showed that the growth
C was optimum in terms of quality of
temperature of 850
the partially Fe-filled MWCNTs. Later on the same group
[183] varied the preheating temperature from 850 to
C was the
1000
best in terms of growth density as well as the degree of
graphitization. Afterwards Sengupta et al. [184] extended
their study to investigate the effect of growth temperature
on the growth of partially Fe-filled MWCNTs from pro-
pane decomposition on spin-coated Fe layer over Si sub-
strate using APCVD technique. They found that in case of
spin-coated catalyst the growth starts at 550
C and found that sample preheated at 900
C.
9.4 GROWTH MECHANISMS
TCVD relies on thermal decomposition of carbonaceous
gas molecules. Baker et al. [185] proposed a widely
accepted general growth process of CNTs by CVD in
1972 which is based on the vapor liquid solid (VLS)
mechanism (hydrocarbon vapor - metal carbon liquid
- crystalline carbon solid). Absorption, saturation, and
structure extrusion are the three basic steps of VLS mech-
anism. In the VLS mechanism, a metal with low melting
point and capable of absorbing the desired gas species is
generally used as a catalyst. Here sufficient
thermal
energy is applied which transforms the solid metal cata-
lyst into a molten state and decomposition of the carbon
feedstock starts. After the initiation of gas decomposition,
the carbon atoms start to diffuse within the catalyst and
form a metal carbon solution. As more and more carbon
elements are incorporated into the catalyst, the concentra-
tion of carbon exceeds the solubility limit of the catalyst
the metal carbon solution
particle and consequently,
become supersaturated. Afterwards, addition of more car-
bon species into the system creates carbon precipitates at
the surface of the particle which promotes the formation
of tubular carbon structure. At this stage two different
mechanisms are possible (Fig. 9.23), i.e., the catalyst par-
ticle is situated either at the top or at the bottom of the
CNT after the growth is terminated. Bellavitis et al. [187]
discussed the reason behind the occurrence of two differ-
ent growth modes. Strong adherence of the particle with
the substrate surface leads to the base growth model,
since the carbon precipitates from the top surface of the
particle and the tube continues to grow with the particle
attached to the substrate. Whereas, weak adherence of the
particle with the substrate surface leads to the tip growth
model, since carbon precipitation occurs at the bottom
surface of the particle so the particle is lifted up with the
growing tube and finally reaches the top end of the tube.
Vinciguerra et al. [188] suggest that tip growth or root
growth of CNTs depends solely on the strength of the
interaction of the catalyst particle with the substrate.
However, the nature of the driving force for carbon diffu-
sion through the catalyst particles is a subject of debate.
The associated reports indicated that
the temperature
[189] or concentration gradient [190] within the particle
can act as the driving force.
The key step in temperature-driven carbon diffusion
mechanism was believed to be the diffusion of carbon
species through the particle from the exposed and hotter
front surface on which the exothermic decomposition of
hydrocarbons occurs, to the cooler rear surfaces on which
carbon is precipitated (endothermic process) from the
solid solution [191]. The cooler surfaces are generally in
contact with the support
face. There is considerable
experimental evidence to support this mechanism [192].
However, a temperature-driven dissolution precipitation
mechanism cannot provide a rational explanation for the
endothermic pyrolysis of some hydrocarbons, e.g., CH4
decomposition.
Concentration-driven carbon diffusion mechanism
involves a concentration gradient across the catalyst parti-
cle in contact with hydrocarbon on one side and with a
Growth stops
Catalyst
CxHy
C
Catalyst
Catalyst support
Substrate
Catalyst support
Substrate
(A)
(B)
CxHy
Catalyst
Catalyst support
Substrate
CxHy
CxHy
Catalyst
Catalyst support
Substrate
CxHy
Catalyst
Catalyst support
Substrate
CxHy
CxHy
CxHy
Catalyst
Catalyst support
Substrate
FIGURE 9.23 Schematic representation of the two typical CNT growth modes, (A) tip growth mode and (B) base growth mode [186]. CNT, carbon
nanotube.
graphitic precipitation on the other side. Carbon growth
involves a fast gas phase reaction (decomposition of
hydrocarbon), carbon atom dissolution in the metal, and
carbon precipitation as graphitic structures at the opposite
side of the catalyst particle.
Primarily it was assumed that the volume diffusion
of carbon through a catalyst particle is responsible for
the catalytic growth of CNTs. However, Baird et al.
[193] proposed a mechanism based on surface diffusion
of carbon around the catalyst particle and was later
expatiated by Oberlin [9]. Helveg et al. [194] studied
the synthesis of CNTs using CVD of methane and Ni as
catalyst under a controlled atmosphere TEM and their
observation supports the surface diffusion mechanism
(Fig. 9.24).
For a catalyst particle of unchanging size, the growth
of CNTs should continue until the hydrocarbon is shut
off, either by removing the feedstock from the reaction
area or by amorphous or graphitic carbon fully coating
the particle thus blocking the gas. Additionally, in base
growth mechanism, prolonged diffusion of hydrocarbons
down to the nanoparticle situated at the base of the CNT
may slow down or stop the growth. Ideally, continuous
growth of nanotube can be achieved if the nanoparticle is
uninterruptedly fed with carbon source and the nanotube
extrusion process is free of any obstruction. However, in
reality, due to competing reactions at the nanoparticle
site, such as the formation of graphitic shells and the
deposition of amorphous carbon prevents the carbon feed-
stock from reacting with the nanoparticle resulting in ter-
mination of the growth.
9.5 KEY CHALLENGES AND THE FUTURE
DIRECTION
1. Synthesis and scaling: Although many strategies
have been opted for the synthesis of CNTs by CVD,
efforts concerning the scale-up of CNT producing
C
C
C
Metal
Metal
Metal
Support material
FIGURE 9.24 Schematic representation of the CNT growth mode
based on the surface diffusion of carbon around the metal particle [9].
CNT, carbon nanotube.
processes still face contemporary challenges like slow
growth rate (e.g., low nucleation efficiencies), poor
yield (e.g.,
low carbon utilization and fast catalyst
deactivation), and undesirable variations in material
quality and lack of real-time process control. The
growth mechanism of CNTs in CVD is markedly diffi-
cult by the variability of experimental systems in
terms of catalyst, support, carbon precursor, growth
dynamics, and experimental conditions
(humidity,
etc.). Different systems usually result in too different
observations to permit unification and rationalization.
Further analysis on the mechanisms of CNT growth
and producing scale-up would facilitate higher control
of CNT properties like metallic or semiconducting
ratio [197], chirality [198 200],
[195,196], aspect
length [203,204], diameter
alignment
[205 207], defect density [208,209], and the number
of walls [210,211]. Automated [212] and closed-loop
method
situ
[213 215] observation is essential for exploring the
basic growth mechanisms and exploiting them for
industrial production.
experimentation
together with
[201,202],
in
capacities,
simulation
calculative
2. Modeling and Simulation: Advancement of the CNT
synthesis process depends on enabling the growth
infrastructure with proper simulation strategies and
models that can be validated by experiment. In order
to achieve the rapid growth of CNT-based products
from the lab-prototypes, the scientists must develop a
robust
informatics infrastructure that provides the
required optimization of the fabrication processes and
helps
to modify the final product performance.
Numerical simulations are extremely beneficial for
orienting experimental works and improving the
understanding of CNT growth mechanism. With
increasing
has
become an essential prediction tool for the phenomena
that are still too difficult to study experimentally. For
example, scientists used molecular dynamics simula-
tions of CNT growth [216,217] and revealed that tube
chirality controls the growth rate which is faster for
armchair than zigzag. Moreover, analysis of CNT pop-
ulation dynamics during synthesis [218] from which
absolute CNT mass and number density as well as
CNT dimensions (diameter and number of walls) can
be evaluated. Theoretical insight into the basics of the
growth process specially nucleation efficiency and its
mechanism [219,220] will also upgrade the develop-
ment of processes to be capable of producing high-
quality material in quantity. Interactions between indi-
vidual tubes and the role of defects in tube tube inter-
actions are needed to be understood in a better way
for
simulations.
Moreover, a database which relates the catalyst com-
position and size to the properties of the grown CNTs
advancement
CNT-based
of
is also required. More research is needed to under-
stand the mechanism for the prolonged activation time
synthesizing longer CNTs. These cumulative
for
efforts towards deep understanding of
the growth
mechanism will ultimately lead to a robust and vali-
dated model for large-scale growth reactors.
3. Eco friendly: Effect of CNT synthesis methods on
environment [221] is a matter of concern considering
the hazardous gas emission [222] from the reactor dur-
ing the process. To comply with the environmental
concerns the synthesis must be performed with renew-
able materials [223] to achieve environment friendly
[224] green synthesis [225] with reduced energetic
cost [226]. In order to protect the environment from a
rapid degradation, industrial-scale production of CNTs
should be carried out with sustainable technology and
fossil fuel-based CNT production must be terminated.
Scientists must identify and use cheap carbon sources
[227,228], so that the price of CNTs could be scaled
down to a reasonable rate. In order to save energy the
lower growth temperature is an important factor. Until
C [76] in the case
now scientists can go down to 120
C in the case of
of low-pressure PECVD and 280
atmospheric-pressure HFCVD [229]. Effort should be
made in lowering the thermal budget
in order to
achieve long-term sustainability.
4. Reproducibility: Nicole Grobert [230] pointed out
that "Carbon nanotubes will only have a significant
impact when they can be produced with uniform prop-
erties." In order to use the exceptional properties of
CNTs, they should be synthesized with new techni-
ques where the defects can be monitored and removed
in situ resulting in an atomically-perfect CNTs with
uniform properties. Zhang et al. [231] has recently
made moves in the required direction which must be
scaled up towards higher-yield and lower-cost mass
production of high-purity CNTs in a reproducible
manner.
9.6 CONCLUSION
A US-based study [232] revealed that use of CNT in ter-
restrial and air transportation vehicles could enable a 25%
reduction in their overall weight, reduce US oil consump-
tion by nearly 6 million barrels per day by 2035, and
reduce worldwide consumption of petroleum and other
liquid fuels by 25%. This would result in the reduction of
CO2 emissions by as much as 3.75 billion metric tons per
year. Thus it can be easily understood that CNT is an
important member of today's nanotechnology regime.
There are many pathways to synthesize CNTs but CVD is
the best of the lot. Though there are several types of
CVD, categorized based on some physical parameters, the
main hurdle is to grow the CNT with desired structure
with perfection (ideally zero defect density). The field has
progressed in a rapid fashion towards scaling up to
achieve mass production, however some more in-depth
studies regarding growth mechanism are required to
achieve the final step where perfect CNT with desired
structure will be synthesized in an eco-friendly manner
with reproducibility.
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|
1806.04349 | 1 | 1806 | 2018-06-12T06:20:28 | Perfect Generation of Angular Momentum with Cylindrical Bianisotropic Metasurfaces | [
"physics.app-ph"
] | Recent advances in metasurfaces have shown the importance of controlling the bianisotropic response of the constituent meta-atoms for maximum efficiency wavefront transformation. Under the paradigm of a bianisotropic metasurface, full control of the local scattering properties is allowed opening new design avenues for creating reciprocal metasurfaces. Despite recent advances in the perfect transformation of both electromagnetic and acoustic plane waves, the importance of bianisotropic metasurfaces for transforming cylindrical waves is still unexplored. Motivated by the possibility of arbitrarily controlling the angular momentum of cylindrical waves, we develop a design methodology for a bianisotropic cylindrical metasurface that enables perfect transformation of cylindrical waves. This formalism is applied to the acoustic scenario and the first experimental demonstration of perfect angular momentum transformation is shown. | physics.app-ph | physics | Perfect Generation of Angular Momentum with Cylindrical Bianisotropic
Metasurfaces
Junfei Li1,(cid:63), Ana D´ıaz-Rubio2,(cid:63), Chen Shen1, Zhetao Jia1, Sergei Tretyakov2, and Steven Cummer1
1Department of Electrical and Computer Engineering,
Duke University, Durham, North Carolina 27708, USA
2Department of Electronics and Nanoengineering,
Aalto University, P. O. Box 15500, FI-00076 Aalto, Finland
(cid:63) J.L. and A.D. contributed equally to this work
(Dated: June 13, 2018)
Recent advances in metasurfaces have shown the importance of controlling the bianisotropic re-
sponse of the constituent meta-atoms for maximum efficiency wavefront transformation. Under
the paradigm of a bianisotropic metasurface, full control of the local scattering properties is al-
lowed opening new design avenues for creating reciprocal metasurfaces. Despite recent advances
in the perfect transformation of both electromagnetic and acoustic plane waves, the importance
of bianisotropic metasurfaces for transforming cylindrical waves is still unexplored. Motivated by
the possibility of arbitrarily controlling the angular momentum of cylindrical waves, we develop a
design methodology for a bianisotropic cylindrical metasurface that enables perfect transformation
of cylindrical waves. This formalism is applied to the acoustic scenario and the first experimental
demonstration of perfect angular momentum transformation is shown.
INTRODUCTION
Metamaterials have been serving as a primary ap-
proach to fully control the behavior of electromagnetic
waves, acoustic waves and elastic waves in recent years
[1, 2], and is at present a highly active research area.
Metasurfaces, as the 2D version of metamaterials, have
opened up unprecedented possibilities for controlling
waves at will, offering a solution of molding wave prop-
agation within a planar geometry [3, 4]. By engineer-
ing the local phase shift in the unit cells, various func-
tionalities have been achieved by metasurfaces, such as
focusing [5], wave redirection and retro-reflection [6–8],
enhanced absorption [9], cloaking [10], and holographic
rendering [11, 12], to name a few. However, the efficiency
of phase-gradient metasurfaces is fundamentally limited
by the impedance mismatch between incident field and
reflected/transmitted field, so that some of the energy is
scattered into unwanted higher order diffracted modes,
which hinders the applicability in various scenarios.
Recent advances have demonstrated that for electro-
magnetic and acoustic waves, full control of refraction
or reflection can be achieved by carefully controlling the
bianisotropy [13–19], also called Willis coupling in elasto-
dynamics [20], in the unit cells. By tuning both transmit-
ted and reflected phase profiles, one can not only control
the microscopic phase profile along the metasurface but
also achieve the overall macroscopic impedance match
between the incident and scattered fields. Such metasur-
faces, called bianisotropic gradient metasurfaces, serve as
the second generation of metasurfaces for wavefront ma-
nipulation [21]. In recent studies of wave deflection with
both electromagnetic and acoustic bianisotropic gradient
metasurfaces, it has been shown that the transmission ef-
ficiency can be significantly improved, especially for large
deflection angles. Also, it has been demonstrated that
bianisotropic gradient metasurfaces offer scattering-free
wave manipulation even with a relatively coarse piecewise
approximation of the required impedance matrix profile
[19], which provides advantages in fabrication. However,
the concept of bianisotropic metasurfaces and system-
atic design for scattering-free manipulation have been less
explored in other topologies. Cylindrical topologies are
among the most commonly used structures in electro-
magnetics, acoustics, and elastodynamics. However, the
concept and benefits of bianisotropic metasurfaces have
not been extended to this field yet.
In analogy to anomalous refraction for flat metasur-
faces, one of the possibilities offered by cylindrical meta-
surfaces is the transformation between different cylindri-
cal waves. This transformation was achieved by locally
controlling the phase profile along the surface and con-
tribute to the generation of source illusion [22]. Gener-
ation of angular-momentum waves using a single layer
of generalized Snells law (GSL) based metasurface will
not only introduce a large impedance mismatch but will
also require a fine discretization of the surface which is
not easily achievable by conventional cell architectures.
Therefore, generation of wave fields with a large angu-
lar momentum still remains challenging. The successful
realization of scattering-free bianisotropic planar meta-
surfaces suggests that scattering-free cylindrical metasur-
faces might be possible.
Source illusion is just an example of many possibilities
offered by metasurfaces capable of controlling angular
momentum. Recent research has also demonstrated the
manipulation of beams for particle trapping [23, 24] and
boosting communication efficiency [25, 26] with acoustic
angular momentum. Passive generation of wave fields
with non-zero angular momentum is typically imple-
8
1
0
2
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u
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2
1
]
h
p
-
p
p
a
.
s
c
i
s
y
h
p
[
1
v
9
4
3
4
0
.
6
0
8
1
:
v
i
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r
a
mented by leaky wave antennas or metasurfaces based
on generalized Snell's law (GSL) [27, 28] for acoustic
waves and inhomogeneous anisotropic media [29], spatial
light modulator or spiral phase plates [30, 31] for electro-
magnetic waves. However, the recent advances in meta-
surfaces for perfect wavefront manipulation show that
if only the transmission phase profile is controlled, par-
asitic scattering inevitably appears, which reduces the
efficiency, or even cause the failure to the structures, es-
pecially for large angular momentum.
In this paper, we present the first theoretical study,
simulation, and experimental demonstration of per-
fect angular momentum generation by cylindrical bian-
isotropic metasurfaces.
In particular, the work is fo-
cused on metasurfaces for the manipulation of cylindrical
acoustic waves (the reader is referred to the Supplemen-
tary Material for the electromagnetic counterpart). First,
we theoretically analyze the generation of angular mo-
mentum showing that bianisotropic response is required
for perfect performance. Next, we propose a possible re-
alization of the required impedance matrix profile. We
take an example of the transformation between a point
source (zero angular momentum) and a field with an an-
gular momentum n = 12 and confirm in simulations that
the desired field distribution is indeed created without
any reflection and scattering. Finally, a realization in
acoustics is verified by experiments.
RESULTS
(cid:16) ∂p
(cid:17)
r
∂r
∂
∂r
(cid:104)
+ 1
r2
∂2p
∂ϕ2 = 1
c2
0
p =(cid:80)
Theoretical formulation. For acoustic waves, the
2D wave equation in the cylindrical coordinates is writ-
ten as ∇2p = 1
∂2p
∂t2 , where p is
the acoustic pressure and c0 is the sound speed. Just
like plane waves in Cartesian coordinates, Bessel-like
spinning waves with different angular momentum serve
as the bases in cylindrical coordinates.
In the general
case, the solution to this equation can be written as
ejnϕejωt, where H (1)
n
denotes the Hankel function of the first kind (waves con-
verging to the center) and H (2)
n denotes the Hankel func-
tion of the second kind (waves diverging from the cen-
ter), index n represents the angular momentum, an and
bn are the amplitudes of the waves, and k = ω/c0 is the
wavenumber at the frequency of interest.
n (kr) + bnH (2)
anH (1)
n (kr)
(cid:105)
n
In this section we will discuss the theoretical require-
ments for a metasurface to produce perfect transforma-
tion between cylindrical waves with different angular mo-
menta, i.e. with different spinning characteristics, as it
is shown in Fig. 1. The derivation of the solution will be
presented considering acoustic waves, however, a similar
formulation can be used for electromagnetic waves (see
Supplementary Note 1).
The formulation of the problem starts with the def-
2
FIG. 1.
Illustration of the desired performance of a meta-
surface to convert the inner field to a prescribed outer field
without parasitic scattering
inition of the fields inside and outside the volume
bounded by the metasurface. In what follows, the time-
harmonic dependency ejωt will be omitted. Let us con-
sider the field in Medium I (inside the metasurface)
as a divergent wave with the angular momentum n1
that can be expressed as pI = p0H (2)
n1 (kr)ejn1ϕ, where
p0 is the wave amplitude.
It is important to men-
tion that we only consider a divergent wave inside the
metasurface because the objective of the metasurface
is to perfectly transform the incident cylindrical wave
without reflections. The velocity vector can be calcu-
ωρ∇p) as #»v I =
lated from the pressure field ( #»v = j
p0
ejn1ϕ, where Z0 =
√
Z0
c0ρ is the characteristic impedance of air and ∂r repre-
sents the partial derivative with respect to r. Following
the same approach, we can define the field in Medium II
(outside the volume bounded by the metasurface) as
a divergent wave with the angular momentum n2 as
pII = ptH (2)
n2 (kr)ejn2ϕ with pt being the amplitude of the
transmitted wave. The velocity vector can be expressed
as #»v II = pt
Z0
n2 (kr)ρ − n2
n1 (kr)ρ − n1
kr H (2)
kr H (2)
j∂rH (2)
j∂rH (2)
n2 (kr) ϕ
n1 (kr) ϕ
ejn2ϕ.
(cid:104)
(cid:104)
(cid:105)
(cid:105)
We assume that the metasurface is a cylindrical tube
whose axis is located at the origin, with the inner radius
r1 and the outer radius r2. For lossless and scattering-free
metasurfaces, the energy conservation condition shall be
#»
met. Denoting the time-averaged intensity vector as
I =
1
2 Re{p #»v ∗} = Ir ρ + Iϕ ϕ, this condition can be expressed
in terms of the radial components of this vector at the
two sides of the metasurface:
0
2Z0
t
2Z0
r = p2
I I
r = p2
I II
[Jn1(kr)∂rYn1 (kr) − Yn1 (kr)∂rJn1 (kr)]r1(1)
[Jn2 (kr)∂rYn2(kr) − Yn2(kr)∂rJn2(kr)]r2,(2)
where Jα and Yα represent the Bessel functions of the
first and second kind, respectively. These expressions
can be simplified as I I
and I II
r = p2
r = p2
0
πZ0
To ensure that all the energy of the incident wave is
carried away by the transmitted spinning wave, the nor-
1
r1
1
r2
.
t
πZ0
sourcemetasurfacerφ mal component of the intensity vector crossing a line el-
ement of the inner radius, S1 = r1dϕ, has to be equal
to the one crossing the corresponding line element in the
other radius, S2 = r2dϕ. This condition can be written
as I I
r S2 and yields that the pt = p0. If we define
the macroscopic transmission coefficient as
rS1 = I II
Conversion from the impedance matrix to the transfer
matrix is given by
(cid:34) Z11
Z21
1
Z21
M =
(cid:35)
Z11Z22−Z21Z12
Z21
Z22
Z21
3
(10)
T =
pII(r2)
pI(r1)
=
H (2)
H (2)
n2 (kr2)
n1 (kr1)
ej(n2−n1)ϕ,
(3)
which indicates that M11 and M22 are real, while M12
and M21 are imaginary. Explicit solution for the transfer
matrix can thus be written:
it is possible to see that the magnitude of the macro-
scopic transmission coefficient can be greater (smaller)
than unity if n2 is greater (smaller) than n1, respectively.
It is noted here that this condition is analogous to the
plane-wave case described in [18, 19].
The next step towards the realization of perfect trans-
formation between cylindrical waves is to determine the
required boundary conditions at both sides of metasur-
face. At the inner and outer boundaries of the meta-
surface, for each specific circumferential position, the
impedance matrix which models the metasurface is de-
fined as(cid:20) pI(r1, φ)
(cid:21)
pII(r2, φ)
(cid:20)Z11 Z12
Z21 Z22
(cid:21)(cid:20) S1 n · #»v I(r1, φ)
−S2 n · #»v II(r2, φ)
(cid:21)
=
,
(4)
where n is the unit normal vector to the metasurface.
In the most general linear, time-invariant, lossless, and
reciprocal case, the impedance matrix is symmetric,
Z12 = Z21, and all its components are purely imaginary,
Zij = jXij [19].
n2 (kr2)ejn2φ, C(cid:48)
For compactness, we denote Cn1 = H (2)
2 [H (2)
2 [H (2)
n1 (kr1)ejn1φ,
n1−1(kr1) −
Cn2 = H (2)
n2−1(kr2) −
H (2)
n1+1(kr1)]ejn1φ
H (2)
n2+1(kr2)]ejn2φ, and re-write Eq. (4) in form of a
system of two linear equations:
and C(cid:48)
= 1
1
=
n2
n1
(cid:26) Z0Cn1 = −S1X11C(cid:48)
Z0Cn2 = −S1X12C(cid:48)
+ S2X12C(cid:48)
+ S2X22C(cid:48)
n2
n2
(5)
n1
n1
X11 =
After some algebra, the components of the impedance
matrix can thus be calculated:
) − Re(Cn1)Im(C(cid:48)
Im(Cn1 )Re(C(cid:48)
)
) − Re(C(cid:48)
)Im(C(cid:48)
Im(C(cid:48)
)Re(C(cid:48)
)
) − Re(Cn2)Im(C(cid:48)
Im(Cn2 )Re(C(cid:48)
)
) − Re(C(cid:48)
)Im(C(cid:48)
)Re(C(cid:48)
Im(C(cid:48)
)
n1
)Re(Cn2) − Re(C(cid:48)
Im(C(cid:48)
)Im(Cn2 )
) − Re(C(cid:48)
Im(C(cid:48)
)Re(C(cid:48)
)Im(C(cid:48)
)
Z0
S1
Z0
S2
X12 = − Z0
S1
X22 =
. (8)
(6)
(7)
n2
n2
n2
n2
n2
n2
n1
n2
n1
n1
n2
n1
n1
n2
n1
n2
n1
For simplicity in the derivations, and to provide an-
other view point for the requirements, the required prop-
erties of the metasurface can also be expressed in terms
of the transfer matrix, which is defined by
(cid:20)
(cid:21)
(cid:20)M11 M12
(cid:21)(cid:20)
M21 M22
pI(r1, φ)
S1 n · #»v I(r1, φ)
=
pII(r2, φ)
S2 n · #»v II(r2, φ)
(9)
(cid:21)
n1
n2
n2
n2
n2
)Re(Cn2) − Re(C(cid:48)
) − Re(Cn2 )Im(C(cid:48)
)Re(Cn1) − Re(C(cid:48)
)Re(Cn2) − Re(C(cid:48)
Im(C(cid:48)
)Im(Cn1)
Im(C(cid:48)
)Im(Cn2)
Im(Cn2)Re(C(cid:48)
)
n1
Im(C(cid:48)
)Im(Cn2)
Im(Cn2)Re(Cn1) − Re(Cn2 )Im(Cn1)
Im(C(cid:48)
)Im(Cn2)
)Im(C(cid:48)
Im(C(cid:48)
)
n1
Im(C(cid:48)
)Im(Cn2 )
)Re(Cn2) − Re(C(cid:48)
) − Re(C(cid:48)
)Re(C(cid:48)
)Re(Cn2 ) − Re(C(cid:48)
n2
n2
n2
n2
n2
n2
n1
n2
n2
M11 =
−S1
S2
jZ0
S2
jS1
Z0
(11)
(12)
(13)
.(14)
M22 =
M12 =
M21 =
It is easy to check that this matrix corresponds to a re-
ciprocal and lossless system.
Note that as long as n1 (cid:54)= n2, we will always have
M11 (cid:54)= M22, which leads to Z11 (cid:54)= Z22. This asymmetry
is analogous to the plane-wave case in the Cartesian coor-
dinates, meaning that controlling only the transmission
phase along the metasurface is not enough for perfect en-
gineering the power flow. Instead, a bianisotropic meta-
surface with precisely controlled asymmetric response is
required.
Design and Realization. For the actual
imple-
mentation of the metasurface described in the previous
section, there are several different possible approaches.
First, one can always use three membranes separated by
a fixed distance. By controlling the thickness and in-
plane tension of the membranes, one can, in principle,
control the impedances to satisfy Eqs. (6)-(8). How-
ever, the surface tension, uniformity and durability for
the membranes are extremely hard to control, and it is
questionable whether such configuration can be practi-
cally realized. More details about this approach are given
in the Supplementary Materials.
An alternative approach based on a straight channel
with four resonators was proposed for flat surfaces [19].
The design provides enough degrees of freedom for full
control over the bianisotropic response while reducing
the loss induced by resonances. Here, we propose the
four-resonator design in cylindrical coordinates for full
control over the bianisotropic response of the unit cells.
An example cell is shown in Fig. 3. In this structure: the
width and height of the neck, hneck and wneck, are fixed
for the four resonators; the width of the cavities wcav is
also fixed; the sector angle of the wedge-shaped channel
θc and the height of the resonators wa, wb, wc, and wd
can be varied to control the overall impedance response;
and the wall thickness of the unit cell is fixed and will
4
required impedance matrix. To solve for a practical de-
sign within geometrical limitations, a continuous genetic
algorithm is adopted for optimization of the design pa-
rameters, so that the impedance matrix of the optimized
structure matches the theoretical requirements.
We have designed a metasurface to transform a
monopole source (n1 = 0) located at the center to a
spinning field with the angular momentum of n2 = 12.
In this case, r1 = 15 cm, r2 = 20 cm, and one period is
represented by 6 meta-atoms. In this case, each unit cell
occupies a sector of ∆φ = π/36, therefore, S1 = ∆φr1
and S2 = ∆φr2. We swept the circumferential positions
with a step of 0.1 degrees, and run the GA optimization
50 times at each point to search for the best combination
with the lowest relative error.
Although theoretical calculation offers a fast and close
approximation of the meta-atom behavior, it will also
introduce some error due to truncation of the infinite
series and the straight channel assumption. On the
other hand, extracting the impedance using commercial
simulations (for example, COMSOL Multiphysics) offers
slow but more precise characterization. Therefore, based
on the structure obtained from theoretical optimization,
we further optimize it locally using genetic algorithm
by slightly perturbing the structure dimensions within
±1 mm. The method used for extracting the impedance
matrix from simulation was adopted from the standard
"4-microphone" method. The method uses four micro-
phones to measure the pressure at two fixed points on
both sides of the tested structure under two different
boundary conditions, and the properties can thus be cal-
culated. Based on the same idea, we developed a method
to extract the structure properties in cylindrical coordi-
nates. Detailed derivation of the method is summarized
in Supplementary Note 3.
The theoretical requirement for the desired metasur-
face and the achieved values from the two-step optimiza-
tion is shown in Fig. 3(a). Detailed dimensions of the
meta-atoms and their relative errors can be found in Ta-
ble I. We can see that the required impedance is closely
realized by the optimized meta-atoms. Simulation of the
obtained structure was performed in COMSOL Multi-
physics with the pressure acoustics module. The walls
of the unit cells are set to be hard due to the large
impedance contrast in the implementation. The back-
FIG. 2. Unit cell consisting four resonators for the realization
of the impedance matrix in cylindrical coordinates.
be defined by the fabrication limitations. The walls be-
tween adjacent cells are assumed to be hard so that the
wave does not propagate along the orthogonal direction
inside the metasurface. Therefore, all the cells in the
bianisotropic metasurfaces can be designed individually.
The transfer matrix of the proposed meta-atom topol-
ogy can be calculated as
M = MT LMH1MT 1MH2MT 2MH3MT 3MH4MT R (15)
with MT L, MT R, and MT 1,2,3 being the transfer func-
tions of transmission lines at the entrance, exit, and be-
tween adjacent resonators, as is shown in Fig. 2.
(cid:20)
(cid:21)
MHi =
1
0
1/ZHi 1
,
i = 1, 2, 3,
(16)
where ZHi are the acoustic impedances for each shunted
resonator. The detailed derivation of ZHi
is given
in [33], and the result
is directly given here for
Zc+jZn tan(kw2)
Zn+jZc tan(kw2) + jIm(Zd). Here
brevity: Za = Zn
Zn = ρ0c0/h2 and Zc are the acoustic impedance
of the neck and the cavity of the Helmholtz res-
onator, respectively. Im(Zd) is the radiation impedance
which is expressed as: Zd = ρ0c0
+
w1h2
2
with k(cid:48)
1−e−jkh2−jkh2
k2 − k(cid:48)
1−e−jk(cid:48)
(cid:80)
(cid:113)
znh2
k2
2kρ0c0
w1h2
and k(cid:48)
2
xn
xn = nπ/w1. The acoustic impedance of the
,
cavity Zc is given by Zc = (cid:80)
(cid:112)k2 − (nπ/h3)2. The impedance matrix of an arbitrary
k(1+e2jk(cid:48)(cid:48)
xnh3(1−e2jk(cid:48)(cid:48)
k(cid:48)(cid:48)
2 − δn cos(nπ/2)sinc(nπh2/2h3) and k(cid:48)(cid:48)
xnw3 )Φ2
n
xnw3 )
xn =
where Φn =
n ρ0c0
zn =
√
n=1
zn h2−jk(cid:48)
k(cid:48)
3
zn
2
meta-atom can then be calculated by converting the
transfer matrix using
(cid:34) M11
M21
1
M21
Z =
(cid:35)
M11M22−M21M12
Z21
M22
M21
.
(17)
With the theoretical requirement of the impedance ma-
trix profile for perfect wavefront transformation and the
versatility of the meta-atom for full control over the bian-
isotropic response, the next step is to decide the detailed
physical dimensions of the meta-atoms that form the
metasurface. Since there are three independent elements
in the required impedance matrix (X11, X12, X22) and
five controlling parameters (θc, wa, wb, wc and wd), there
can be many combinations for a meta-atom to realize the
TABLE I. Design parameters of the meta-atoms
Cell cost(%) θc (mm) wa (mm) wb (mm) wc (mm) wd (mm)
1
2
3
4
5
6
2.08
0.66
0.16
0.55
0.35
0.84
0.5699
0.5655
0.6997
0.7002
1.0221
1.3931
6.8
7.0
8.4
7.4
4.1
8.7
8.8
7.0
7.9
8.4
8.1
2.1
8.6
8.3
2.5
0.9
6.7
0.5
6.9
6.4
5.2
4.3
3.0
3.0
5
tered at 3000 Hz. The field was scanned by a moving
microphone with a step of 1 cm. Then the field is cal-
culated by performing Fourier transform of the detected
pulse. Since the overall size of the scanning system is lim-
ited, and the field is symmetric, a quarter of the whole
field is scanned, as shown in Fig. 4(a), and the measured
data is then mapped to other regions.
The real part of the scanned field and the phase of
the field is plotted in Fig 4(b) and Fig. 4(c). From
the experimental results, we can see that the fabricated
metasurface created the field with much lower unwanted
scatterings compared with an ideal GSL-based metasur-
face shown in Fig. 4(d). The small discrepancy is due to
the fabrication errors, and the small difference in the air
properties between simulation and experiment. In par-
ticular, the sound speed was 344 m/s in our lab during
the measurement window, while we assumed 343 m/s in
the simulation, which will cause the working frequency
to increase by about 8 Hz. To quantitatively character-
ize the results, we extracted the coefficients of contribut-
ing modes by taking the data around a circular trajec-
tory and performing a Fourier transform of the fields at
r = 22 cm to extract the amplitudes of different modes.
The power of each mode is calculated and then normal-
ized by the total power. The power distribution over the
modes of n = −30 to n = 30 is plotted in Fig. 4(d). For
comparison, the same analysis is performed for the sim-
ulation of the bianisotropic metasurface and the ideal
GSL-based metasurface. We can clearly see that the
GSL-based metasurface, even with the perfectly designed
cells of full transmission and precise control of the trans-
mitted phase, produces a large component of n = −12
mode, so that only 70% of the transmitted energy is
in the desired mode, while in the bianisotropic designs,
the unwanted scattering is greatly suppressed, showing
99% and 92% of the transmitted energy in the desired
mode n = 12 in simulation and experiment, respectively.
The experimental results show good agreement with the
simulation, demonstrating the possibility of near perfect
transformation of acoustic wavefronts.
DISCUSSION
In this paper, we have introduced a multi-physics de-
sign method for creation of acoustic or electromagnetic
bianisotropic metasurfaces of cylindrical shape for per-
fect generation of waves with arbitrary angular momenta.
We first defined theoretically the conditions and require-
ments, and pointed out that controlling the local phase
shift in transmission alone cannot achieve such trans-
formations.
Instead, full control over the bianisotropy
is required. Then we proposed possible realizations for
acoustic waves, and verified them with simulations, show-
ing that the proposed metasurface nearly perfectly trans-
forms a monopole source into a spinning wave field with
FIG. 3. Theoretical determined and optimized impedances
and the simulated fields. (a) Comparison between theoretical
requirements and the achieved values using GA optimization.
(b) The real part of the simulated acoustic field using real
structures. The inset shows the pressure amplitude near the
metasurface. (c) The field generated by GSL based metasur-
face using ideal unit cells as a comparison.
ground medium is air with density 1.21 kg/m3 and sound
speed 343 m/s. The incident pressure amplitude is 1 Pa
at r = 2 cm. The outer edge of the simulated region is
connected to a perfectly matched layer. The simulated
pressure field and the pressure amplitude are shown in
Fig. 3(b). We can see that the monopole wavefront is per-
fectly converted to a field with the angular momentum
of 12 without parasitic reflection and scattering. From
the pressure amplitude field we can see that the macro-
scopic transmission coefficient T > 1, i.e., the pressure
on the transmission side is larger than the incident side.
The corresponding reference GSL metasurface formed by
ideal unit cells with the same size and the same number
of cells period is shown in Fig. 3(c) as a comparison.
We can see that there is strong reflection and lots of the
transmitted energy is scattered to the unwanted modes
and the overall wave pattern is corrupted.
Experimental Verification. The theory and sim-
ulations are then verified with experiments. We chose
the same example as discussed in the previous section.
The experimental setup is shown in Fig. 4(a). The sam-
ple was fabricated by Selective Laser Sintering (SLS)
3D-printing. The material is Nylon with the density of
950 kg/m3 and sound speed of 1338 m/s, so that the
walls can be regarded as rigid due to the large impedance
contrast with air. The printed sample has the inner ra-
dius of 150 mm and the outer radius of 200 mm, and the
height of the sample is 41 mm to fit in the 2D-waveguide.
The monopole source was provided by a 1-inch speaker
located at the center, which sends a Gaussian pulse cen-
00.20.40.60.81 / -5000500Imag(Z)Z11Z12Z22TheoryStructure0.8-0.8Pressure (Pa)00.8(a)(b)(c) 6
large. In this paper, we have proposed and demonstrated
the realization of theoretically perfect generation of angu-
lar momenta with a bianisotropic metasurface. We also
hope that such metasurfaces can be explored in optics to
enhance the efficiency of generating orbital angular mo-
mentum beams for high-speed optical communications
and other applications.
Here we would like to stress that the proposed design
strategy is not only valid for generation of angular mo-
mentum beams but for rather general manipulation of
wavefronts, both for acoustic and electromagnetic waves.
For example, by designing the bianisotropic impedance
matrix profile, one may create a multi-polar sources from
a single excitation within a limited space; the proposed
metasurface may also be applied as an interface between
two media to enhance energy transfer; the metasurface
may also be applied in topological insulators to either
act as a spinning source to excite some certain modes,
or even provide the "pseudo spin" for topological insula-
tors in airborne systems. We believe that the proposed
bianisotropic metasurface concepts can serve as a new
approach to designing highly efficient metasurfaces.
ACKNOWLEDGMENTS
This work was supported by the Multidisciplinary Uni-
versity Research Initiative grant from the Office of Naval
Research (N00014-13-1-0631), an Emerging Frontiers in
Research and Innovation grant from the National Sci-
ence Foundation (Grant No. 1641084), and in part by
the Academy of Finland (project 287894 and 309421).
AUTHOR CONTRIBUTIONS
J.L., A.D. performed theoretical analysis J.L., A.D.,
and C.S. performed numerical simulations. J.L., C.S.
and Z.J. conducted the experiments and processed the
data. All authors contributed to analyzing the data and
preparing the manuscript. S.A.C. and S.A.T. supervised
the study.
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|
1809.01252 | 1 | 1809 | 2018-09-04T21:45:00 | Architected lattices for simultaneous broadband attenuation of airborne sound and mechanical vibrations in all directions | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | Phononic crystals and acoustic metamaterials are architected lattices designed to control the propagation of acoustic or elastic waves. In these materials, the dispersion properties and the energy transfer are controlled by selecting the lattices' geometry and their constitutive material properties. Most designs, however, only affect one mode of energy propagation, transmitted either as acoustic, airborne sound or as elastic, structural vibrations. Here, we present a design methodology to attenuate both acoustic and elastic waves simultaneously in all polarizations. We experimentally realize the first three-dimensional, load bearing, architected lattice, composed of a single-material, that responds in a broadband frequency range in all directions. | physics.app-ph | physics |
Architected lattices for simultaneous broadband attenuation of airborne sound and
mechanical vibrations in all directions
1Department of Mechanical and Process engineering, ETH Zurich, 8092 Zurich, Switzerland and
Osama R. Bilal1,2, David Ballagi1, Chiara Daraio2
2Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125, USA
Phononic crystals and acoustic metamaterials are architected lattices designed to control the
propagation of acoustic or elastic waves.
In these materials, the dispersion properties and the
energy transfer are controlled by selecting the lattices' geometry and their constitutive material
properties. Most designs, however, only affect one mode of energy propagation, transmitted either as
acoustic, airborne sound or as elastic, structural vibrations. Here, we present a design methodology
to attenuate both acoustic and elastic waves simultaneously in all polarizations. We experimentally
realize the first three-dimensional, load bearing, architected lattice, composed of a single-material,
that responds in a broadband frequency range in all directions.
Architected materials have the ability to influence
the propagation of lattice vibrations or pressure waves
across scales. These materials can attenuate elastic or
acoustic energy by supporting the formation of forbid-
den frequency bands (band gaps) in their dispersion re-
lation, where waves can not propagate. These gaps form
through two main mechanisms[1]:
(1) Bragg scatter-
ing, where periodically repeated unitcells scatter waves
with wavelength at the same order of the lattice spatial
periodicity[2, 3]. (2) Resonances, where locally resonat-
ing elements can attenuate waves with wavelength much
larger than the lattice periodicity[4]. The resonances en-
able these lattices to retain properties that do not exist
in conventional materials, like negative effective mass or
stiffness[5 -- 7]. The existence of such band gaps within
the frequency spectrum can be utilized for many applica-
tions, such as seismic protection[8, 9], vibration or sound
insulation[10 -- 12], frequency filtering[13, 14] and wave-
guiding[15, 16], among others[17].
Architected lattices can be divided into two broad
categories based on the host medium where waves
propagate[5, 6]:
(i) Acoustic lattices, controlling the
propagation of pressure waves in fluids, such as air and
water. They usually feature rigid scatterers such as cylin-
ders or spheres, capitalizing on destructive interferences
(Bragg-type scattering)[3, 18 -- 20]. Some designs also use
resonances (and give rise to negative effective properties):
For example, including heavy masses with rubber coating
that induce Mie type resonances[4]. Other realizations in-
clude Helmholtz resonators featuring fluid chambers with
single or multiple openings[21, 22] or coiled space[23].
(ii) Elastic lattices, controlling the propagation of stress
waves and vibrations in solid materials. They can feature
alternating material phases within the unit cell[2, 24 -- 28],
with vast difference in mechanical properties, or single
material with geometric features, such as holes[29, 30],
leading to Bragg scattering. Another way to attenuate
elastic waves is through resonating inclusions, such as pil-
lars or heavy masses[31 -- 33]. These realizations rely on
strong resonance cutting through the dispersion curves to
open subwavelength band gaps. Most recent studies on
acoustic and elastic metamaterials have focused on the
design and characterization of lattices with ever broader
(and lower) frequency band gaps, in each separate do-
main of wave transport[6, 33 -- 40].
An architected lattice with the ability to attenuate both
elastic and acoustic waves simultaneously in all direc-
tions remains elusive. Such material can be useful for
FIG. 1. Color online.
(a) Conceptual frequency spectrum
of a metamaterial with simultaneous band gaps for airborne
sound and mechanical vibrations. (b) Basic building block for
a material stopping both sound and vibrations in the same
frequency range. Both the solid part and the air within the
unit cell is plotted next to the physical prototype. (c) De-
sign sequence starting from a hollow elastic sphere (Top row)
Design evolution of the 3D cell, (Bottom row) view of the
corresponding mid-section plane cut-out.
2
face separated from the neighboring faces. The arms also
create a narrow slit connecting the corner chambers and
introduce a second control over resonances for acoustic
waves.
Based on this design methodology, the position of the
band gaps for either sound or vibrations can be easily
tuned. For example, by changing the narrow channel
radius or the shell thickness. With this method, the at-
tenuated bandwidth of sound frequencies can be chosen
independently from the attenuated vibration frequency-
ranges.
In other words, one can create multiple band
gaps in the audible regime for sound waves and have other
band gaps in similar (or different) frequencies for elastic
vibrations. The realized lattice is load bearing (see Sup-
plementary Information) and the underlying principle of
wave attenuation is scale and material agnostic.
To investigate the validity of our approach, we first
consider an infinite medium model, where a single
unit cell
is analyzed using Bloch periodic boundary
conditions[41]. We assume small deformations and there-
fore neglect acousto-elastic coupling. The dispersion
curves of the unit cells are calculated using the wave
equations for heterogeneous media [42] within an infi-
nite medium. We solve both the acoustic and the elas-
tic equations using the finite element method (COM-
SOL 5.2). The solution is the wavefunction u(x, κ; t) =
(cid:124)
x−ωt)), where u is the Bloch displacement
u(x) exp(i(κ
vector, x is the position vector, κ is the wavenumber, ω
is frequency and t is time. The dispersion curves relat-
ing the wavenumber to the frequency, in non-dimensional
units, show band gaps (gray shaded regions) for both
elastic (Fig. 2a) and acoustic waves (Fig. 2b). The dis-
persion curves are normalized by multiplying the opera-
tional frequency by the unit cell size divided by the speed
of the wave in the medium, Ω = f a/c. It should be noted
that while the unit cell size is the same in both elastic
and acoustic cases, the wave speeds are not. Therefore,
having a band gap in both plots, at Ω = 0.3 for instance,
does not necessarily guarantee a simultaneous band gap
in the dimensional frequency domain.
To visualize the vibrational mode shapes of the solid
unitcell, we superimpose the displacements profiles as a
heat map over its geometry for four different frequencies
in figure (2c). The mode shapes resemble (i) longitudinal,
(ii) shear and (iii) rotational modes of the face-masses in
the unit cell. We also plot a resonant mode shape of the
arms (iv) which manifests itself within the first full band
gap in the frequency spectrum at Ω = 0.31. The acoustic
pressure profiles of the air unitcell are superimposed as
a heat map over its geometry for four different frequen-
cies in figure (2d). The mode shapes show the resonance
mode of the spherical chamber (i and iii) and the corner
chambers (ii and iv).
As a proof of concept demonstration, we first realize
an array of seven unit cells tessellated along one direction
(Fig. 3a,d). We fabricate our samples by additive man-
FIG. 2. Color online. Dispersion curves of the metamaterial
for (a) mechanical vibrations (b) airborne sound. Full band
gaps are highlighted in gray and partial ones are in brown.
(c) Selected elastic mode shapes of the solid unit cell.
(d)
Selected acoustic mode shapes of the air unit cell.
many applications. For example, in airplanes, ships or
submarines, when an engine is producing both mechan-
ical vibration and acoustic noise, compromising opera-
tional comfort and functionality. In this work, we real-
ize three-dimensional architected lattices that can simul-
taneously attenuate both acoustic (airborne sound) and
elastic waves (vibrations) in all directions, over a broad
range of frequencies (Fig. 1a-b). Our design methodol-
ogy capitalizes on both scattering and resonances to open
band gaps for sound and vibrations.
To construct our cubic unitcell, we start with an elas-
tic spherical shell that works as an acoustic chamber re-
sembling a Helmholtz resonator (Fig. 1c). The shell
also works as an elastic spring connecting six rectangu-
lar masses positioned at the center of each of the unitcell
faces. This spring-mass arrangement gives rise to Bragg
scattering for elastic waves. For the chamber to function
as a resonator for acoustic waves, we add a narrow cylin-
drical channel at each of the unitcell faces. Afterwards,
we remove the corner of each face-masses to add an ex-
tra acoustic chamber at the eight corners of the unitcell.
Finally, we add four resonating "arms" to each of the six
rectangular masses. The added arms function as locally
resonating elements for elastic waves, while keeping each
3
FIG. 3. Color online. (a) Metamaterial used for the elastic vibration experiment. (b) Numerical and experimental frequency
response functions for elastic vibrations. The gray shaded areas represent the location of the band gaps calculated with
Bloch analysis. (c) Selected mode shapes of the metamaterial at pass bands and stop bands for elastic waves. (d) The same
metamaterial enclosed in a tube for sound transmission experiments.
(e) Numerical and experimental frequency response
functions. (f) Selected mode shapes of the metamaterial within pass and stop bands for sound waves. The scale bars in a and
d are 25 mm.
ufacturing (laser sintering) using polyamide-12 polymer
(the measured Young's modulus, through a compression
test, and density are E = 0.5 GPa, ρ = 1200 Kg/m3).
The lattice spacing is a = 34 mm. The elastic response
of the metamaterial is characterized by harmonically ex-
citing one of its ends with a mechanical shaker (Bruel
& Kjaer Type 4810) and measuring the transmitted vi-
brations with a laser Doppler vibrometer LDV (Polytec
OFV-505 with a OFV-5000 decoder, using a VD-06 de-
coder card) at its other end. We sweep through frequen-
cies ranging from 1-16 kHz and record the amplitude of
the transmitted vibrations (Fig. 3b). We replicate the
experiment numerically using the finite element method,
by applying a harmonic load along the x-direction and
recording the amplitude of the displacement at the op-
posite end of the structure. The theoretically predicted
band gaps are highlighted in gray in (Fig. 3b). The nu-
merically computed displacements are superimposed as a
heat map over the structure for six different frequencies
within both pass (top) and stop (bottom) bands in Fig.
3c. Experiments and numerical results agree well. We
note the existence of low amplitude regions within the
transmission plot that do not coincide with a band gap.
They correspond to a pass band with rotational or shear
polarizations and can not be excited longitudinally, both
in experiments and simulations.
To test the acoustic response of the metamaterial, we
enclose the sample within a custom made impedance tube
(Fig. 3d) inside an acoustic chamber. Chirp signals are
generated with a loud speaker (model Clarion SRE212H)
on one end of the tube. Two microphones (G.R.A.S.
40BD) are used to record the generated and transmitted
signal, on each side of the metamaterial. We experimen-
tally observe more than 35(dB) reduction in the transmit-
ted sound along the propagation direction. As a control,
we also measure the sound attenuation through a slab of a
polyamid-12 solid. We observe that the structured mate-
rials, with a density 6 times lower, outperformed the solid
barrier by up to 35 (dB) within the band gap frequency
range. It is worth noting that our metamaterial is porous.
Adding an air opening within the reference solid material
dramatically reduces its sound shielding effectiveness due
to impedance matching with surrounding air. The dif-
ference in attenuation between the control sample (with
an air opening) and our structured material exceeds 80
(dB). We model the experiment, considering the tube as
a rigid boundary and reproducing the sample's geometry
using the finite element method. We generate the excita-
4
FIG. 4. Color online. (a) A three-dimensional realization of the metamaterial consisting of 13 x 13 x 8 unit cells with a lattice
constant a = 25 mm. The material box encloses a piezoelectric transducer for generating mechanical vibrations and a loud
speaker for airborne sound. (b) Acoustic frequency response of the metamaterial using a microphone 8 cm above the box
compared to the transmission of same speaker and microphone without our material. (c) Elastic frequency response of the
metamaterial using LDV at different distances from the mechanical wave source (1,3,5 unit cells).
tion as a point source on one of the ends of the tube and
plot the intensity of the pressure field on the other end
(Fig. 3e). As for mechanical vibrations, the band gaps
calculated with Bloch analysis are highlighted in gray.
The numerically computed pressure fields are plotted as
heat maps for six different frequencies within both pass
(top) and stop (bottom) bands in 3f). A good agreement
between theory, numerical simulations and experiments
is observed. The results demonstrate the ability of our
metamaterial to simultaneously attenuate both airborne
sound and mechanical vibrations, in selected frequency
ranges. It should be noted that the presence of simulta-
neous band gaps for elastic vibrations and airborne sound
is not automatically granted and has to be designed for.
For instance, at 2 kHz, the metamaterial can attenuate
sound, but not vibrations. The opposite is true at 12 kHz,
where the metamaterial can shield elastic vibrations but
not airborne sound.
band gaps for sound and vibrations. For example, con-
sider a unit cell fabricated with polyamide-12 polymer,
and a lattice spacing of 25 mm. Changing the radius of
the hole at the center of the unit cell (Fig. S3a), from
0.5 mm to 1.75 mm can change the lower edge of the
first complete acoustic band gap from 500 Hz to 2500 Hz
(Fig. S3b), with negligible effects on the elastic waves
traveling through the media. Changing the thickness of
the shells enclosing the air chamber in each unit cell (Fig.
S3c), from 0.3 mm to 0.9 mm, can shift the lower edge
of the elastic band gap from 10 kHz to 15 kHz (Fig.
S3d). The change in shell thickness has a negligible ef-
fect on the acoustic response of the metamaterial. Sim-
ilarly, changing the side openings or the shape/mass of
the outer face of the unit cell would significantly change
either the acoustic or the elastic response of the meta-
material, respectively, without significantly affecting the
other.
The position of the band gaps within the frequency
spectrum, for either sound or vibrations, can be altered
by different means. For example, changing the lattice
constant would change the band gap position for both
sound and vibrations. Using a different constitutive ma-
terial, for example with higher Young's modulus, would
shift the elastic band gaps to higher frequencies, while
keeping the acoustic gaps unchanged. However, even
while keeping the same material and lattice constant, our
design principal allows for decoupling the position of the
To demonstrate the effectiveness of the design method-
ology in attenuating both sound and vibrations in all di-
rections, we realize a 13 × 13 × 8 lattice with a = 25 mm
(Fig. 4a). The fabricated box has a cavity of 3 × 3 × 3
unit cells in its bottom center to host a mechanical trans-
ducer and a loud speaker for exciting both structural
and sound waves, respectively. Therefore, the effective
number of unit cells in any direction (±x,±y, +z) is
five. To test the acoustic insulation, we embed a loud
speaker (model Clarion SRE212H) inside the metama-
terial and measure the amplitude of transmitted sound
through the lattice with a 1/4 inch (6.35 mm) micro-
phone (G.R.A.S. 40BD). The test is carried out in an
insulated acoustic chamber, moving the microphone in
different locations around the metamaterial (see Supple-
mentary Information). We compare the signal propagat-
ing through the metamaterials to sound waves recorded
without the lattice at the same distance from the source.
The measured band gaps span frequencies from 2-9.5 kHz
and from 12-14.8 kHz. The attenuated frequency ranges
translate to ≈ 60% of the entire audible range. With
the metamaterial, we measure more than 35 dB attenu-
ation of the sound wave amplitude in all directions. To
test the insulation from mechanical vibrations, we em-
bed a piezoelectric transducer (Piezo Systems 25 x 25 x
2 mm)[www.Piezo.com] within the metamaterial cavity
and induce harmonic excitations at different frequencies.
We measure the transmitted vibrations through the ma-
terial on its outer surface at the distance of one, three and
five unit cells from the vibration source using the LDV.
At the targeted frequency range (highlighted in gray),
we observe a significant reduction in the measured wave
velocities after the third unit cell.
Our design methodology allows for the independent
tuning of band gap frequency ranges for each domain,
in a load bearing metamaterial. Our findings open new
opportunities to design advanced multi-functional meta-
materials, for application in transportation vessels, ma-
chinery and building acoustics.
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Supplementary information:
6
Architected lattices for simultaneous broadband attenuation of airborne sound and
mechanical vibrations in all directions
One-dimensional metamaterial characterization: To test our metamaterial properties, we fabricate two arrays
composed of seven unit cells. For elastic vibration testing, we add two thin plates (5 mm) at each end of the
metamaterial array. We mount an electromechanical shaker against one of the plates and measure the transmitted
signal at the second plate (Fig.S1a). We cover the free end (i.e., the second plate) with a reflective tape and record its
movement (displacement and velocity) using a laser Doppler vibrometer. The experimental setup guarantees complete
isolation of the metamaterial sample from any undesired vibrations through the table. The excitation signal is sent
to the electromechanical shaker from the PC through an audio amplifier (Topping TP22). The measured velocities
are sent back to the PC through a lock-in amplifier model (Zurich Instruments HF2LI).
For airborne acoustic testing, we fabricate the metamaterial enclosed in a tube with a square cross section. The
printed tube has circular holes aligned with those in the metamaterial sample, to ease the removal of excess powder
from the printing process. The side holes are then sound proofed using Blu-tack, to prevent any sound leak from the
metamaterial to the chamber and to ensure full transmission of the wave through the longitudinal direction of the
metamaterial. We fit both ends of the metamaterial in a custom impedance tube with a square profile. The tube
FIG. S1. One-dimensional metamaterial characterization: (a) Mechanical vibration excitation of a 7×1 metamaterial sample
using a mechanical shaker. (b) Airborne sound excitation of a 7×1 metamaterial sample using a loud speaker and a custom
made impedance tube with a square cross section.
7
FIG. S2. Comparison of the acoustic attenuation of different materials:(a) Schematic of tested materials (i) structured material
with air openings, (ii) air-tight solid block made of PA-12 (iii) Pa-12 block with a cylindrical opening with 5 mm diameter and
(iv) an open air channel as a reference. (b) The numerical frequency response function FRF of sound pressure field at the end
of the impedance tube.
has two microphones mounted at a distance of 70 mm from the edges of the metamaterial sample. A loud speaker is
mounted at one end of the tube, while the other end is fitted within the padding of the acoustic chamber (Fig.S1b).
As a control, we simulate the sound attenuation characteristics of an open air channel, a solid block made of PA-12
and a PA-12 block with a small open cylindrical channel (diameter = 5 mm). We use COMSOL multi-physics acoustics
module to simulate the sound pressure fields. An identical impedance tube to the custom made one in Fig. S1b is
modeled in the numerical simulations. The pressure wave is introduced at one end of the tube as a point source and the
resulting pressure field is measured at the other end of the sample. We compare the performance of the three samples
against our structured metamaterial (Fig. S2a). The open air channel has no attenuation capabilities, as expected,
therefore it sets the bar for sound pressure level. Due to impedance mismatch (Zair = 0.000445 kg/m2s×106, ZP A−12
= 1.5 kg/m2s×106), an air-tight block of PA-12 attenuates a large amount of the incident sound energy, however,
the effectiveness of such approach degrades exponentially with a small air-opening. Such scenario is common with
assembly of parts, mechanisms or when open air systems are required (e.g., for cooling purposes). In the case of our
structured materials, the attenuation level is equivalent to the homogeneous material with an open channel in pass
band frequencies. Within the frequency range of the band gap, the structured material has a superior attenuation
profile for sound waves compared to the three other modeled samples.
Three-dimensional metamaterial fabrication: To characterize the metamaterial in all directions, we fabricate a
"box" consisting of 13 x 13 x 8 unit cells 25 mm each. To speed up the printing process, simplify the removal of
8
the excess printing-powder and ease the mounting of vibrations and noise sources, we print each of the box layers
separately. Five of the printed layers are composed of 13 x 13 unit cells, while the remaining three layers have a void
with an equivalent space of 3 x 3 unit cells. The void hosts both a loud speaker and a piezoelectric transducer. To
insure the alignment of the unit cells in the printed layers, we incorporate 13 holes at each side of printed layers.
Following the layers assembly, a long screw passes vertically through the holes and is secured with two bolts at each
of its ends (Fig.S4a).
Three-dimensional metamaterial characterization: To test the response of the metamaterial to airborne sound,
we excite the box from within with a loud speaker (Fig.S4a). Since the box is three-dimensional, there is no need
for covering the pores of the metamaterial. The box is tested within the same acoustic chamber to insure insulation
from surrounding acoustic noise. We place the microphone at each one of the sides of the metamaterial box to
capture the acoustic radiation in all directions (Fig.S4b). Both the side and top measurements confirm the existence
FIG. S3. Color online. Control parameters for changing the position of the band gap for (a-b)acoustic or (c-d)elastic waves
independently: (a) Varying the hole diameter changes the channel width for sound waves and therefore their characteristic
acoustic dispersion.
(b) Acoustic wave dispersion curves for three different diameters 1, 2 and 3.5 mm.
(c) Varying the
shell thickness changes the effective coupling between unit cell parts for elastic waves and therefore their characteristic elastic
dispersion. (b) Elastic wave dispersion curves for three different shell thicknesses 0.3, 0.5 and 0.9 mm.
9
FIG. S4. (a) A metamaterial assembly of 13 x 13 x 3 unit cells with a speaker attached to the bottom layer as a source
for airborne sound. (b) Fully assembled metamaterial box with microphones positioned facing the speaker (left) and to its
side (right). (c) The measured acoustic pressure through the metamaterial acquired through forward-facing and side-facing
microphones.
FIG. S5. (a) A metamaterial assembly of 13 x 13 x 5 unit cells with a piezoelectric plate attached to the bottom layer as a
source for mechanical vibrations. (b) The measured velocity transmitted through one sheet of the metamaterial at the 5th unit
cell and the measured response after assembling 5 layers of the metamaterials in the vertical direction.
of the band gaps predicted from the unit cell analysis (gray regions in (Fig.S4c)). It should be noted, however, that
the transmission in the side measurements has generally lower amplitude than the top one, as the speaker is facing
upwards.
To test the response of the metamaterial to elastic vibrations, we excite the box from within using a piezoelectric
plate (Piezo Systems 25 x 25 x 2 mm)[www.Piezo.com]. The transmitted vibrations are then measured using the laser
Doppler vibrometer at various points within the metamaterial. The measurements taken for a single sheet (2D) agree
well with the full box measurement (Fig.S5b).
10
FIG. S6. Experimental characterization of the load bearing capabilities of the structured metamaterial in comparison to a
homogeneous cube of the same material (PA-12). The inset shows the numerical calculation of the Von Mises stress for a
homogeneous and structured cube under compression load with 1 mm strain.
Load baring capacity of the metamaterial: We characterize the effective static stiffness of the metamaterial by
comparing a block of PA-12 against a single unit cell in a compression test using an Instron 3000 machine. As
expected, the thin features of the unit cell causes a reduction in stiffness of the metamaterial by ≈ an order of
magnitude in reference to the bulk material. A complementary numerical simulation of the compression test shows
the stress concentration within the unit cell (inset in Fig. S6). We use COMSOL structure mechanics module to
perform the numerical test. We add a prescribed displacement as a boundary condition on the top surface of the
unit cell in the -z direction, while keeping the bottom face of the unit cell fixed. The numerical results suggest that
the stiffness of the metamaterial can be greatly increased by increasing the thickness of the connecting shells within
the unit cell. It is worth noting that the metamaterial is lighter than the bulk PA-12 by a factor 6, due to material
removal.
|
1912.04755 | 1 | 1912 | 2019-12-10T15:18:26 | Additive manufacturing for energy storage: Methods, designs and materials selection for customizable 3D printed batteries and supercapacitors | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | Additive manufacturing and 3D printing in particular have the potential to revolutionize existing fabrication processes where objects with complex structures and shapes can be built with multifunctional material systems. For electrochemical energy storage devices such as batteries and supercapacitors, 3D printing methods allows alternative form factors to be conceived based on the end use application need in mind at the design stage. Additively manufactured energy storage devices require active materials and composites that are printable and this is influenced by performance requirements and the basic electrochemistry. The interplay between electrochemical response, stability, material type, object complexity and end use application are key to realising 3D printing for electrochemical energy storage. Here, we summarise recent advances and highlight the important role of methods, designs and material selection for energy storage devices made by 3D printing, which is general to the majority of methods in use currently. | physics.app-ph | physics | Additive manufacturing for energy storage: Methods, designs and materials
selection for customizable 3D printed batteries and supercapacitors
Umair Gulzar1, Colm Glynn2 and Colm O'Dwyer1,3,4,5*
1School of Chemistry, University College Cork, Cork, T12 YN60, Ireland
2 Analog Devices International, Raheen, Limerick, Ireland
3 Micro-Nano Systems Centre, Tyndall National Institute, Lee Maltings, Cork, T12 R5CP, Ireland
4AMBER@CRANN, Trinity College Dublin, Dublin 2, Ireland
5Environmental Research Institute, University College Cork, Lee Road, Cork T23 XE10, Ireland
Abstract
Additive manufacturing and 3D printing in particular have the potential to revolutionize existing fabrication
processes where objects with complex structures and shapes can be built with multifunctional material
systems. For electrochemical energy storage devices such as batteries and supercapacitors, 3D printing
methods allows alternative form factors to be conceived based on the end use application need in mind at
the design stage. Additively manufactured energy storage devices require active materials and composites
that are printable and this is influenced by performance requirements and the basic electrochemistry. The
interplay between electrochemical response, stability, material type, object complexity and end use
application are key to realising 3D printing for electrochemical energy storage. Here, we summarise recent
advances and highlight the important role of methods, designs and material selection for energy storage
devices made by 3D printing, which is general to the majority of methods in use currently.
*Corresponding author: Email: [email protected]; Tel: +353 21 4902732
Keywords: 3D Printing, Additive Manufacturing (AM), Electrochemical Energy Storage (EES), Batteries,
Supercapacitors, Inkjet Printing
1
1.
Introduction
The technology of additive manufacturing (AM), initially introduced in 1980s for building models and
prototyping, is now commercially available in various forms of 3D printers. Contrary to conventional formative
and subtractive manufacturing,
the AM alias of 3D printing is capable of manufacturing high quality
customizable parts from polymers, metals and ceramics without the expense of moulds or machining[1, 2].
Different methods of AM have been developed in last two decades which are classified by American
Standards for Testing and Materials (ASTM) as (1) Material Jetting and (2) Extrusion (3) vat-
photopolymerization (4) powder bed fusion (5) binder jetting (6) sheet lamination and (7)* direct energy
deposition[3]. The capabilities and selection of each printing method and materials are detailed elsewhere[1,
4-9] and lies beyond the scope of this article. Though, the underlying principal of all AM methods involves the
use of a computer aided design (CAD)-based virtual object for controlling the position of a material
dispensing/building device. The object is constructed layer-by-layer, with layer thickness ranging from 15 to
500 µm, using building materials optimized for a specific printing method[10]. This way of fabrication allows
direct manufacturing of final or near-final components with minimal post-processing, smaller operational foot
print and maximum material utilization to achieve zero waste on-demand manufacturing[8].
AM is already well known in the field of medicine for making surgical guides and custom-made
prosthetics[11, 12]. The tomographic data of a patient is used to produce a CAD design which can be 3D
printed according to the size and shape of each individual patient. Recently, an integrated tissue-organ
printing system has been developed to generate freeform shape with multiple types of cells and
biomaterials[13]. Besides, various new materials including nanomaterials, functional/smart materials or even
fast drying concrete, have been explored for 3D printability[14]. In fact, a Chinese company has already
demonstrated the capability of AM by 3D printing multiple houses in a single day[9, 15]. All these technological
achievements show that 3D printing has the potential to revolutionize the process of traditional manufacturing
from aerospace to construction and electronic industry.
Electrochemical energy storage (EES) represents another important arena where unique building
properties of AM and 3D printing can be exploited[16]**. Thoughtfully designed 3D structures are reported to
show better performance in batteries and supercapacitors[17, 18]. Traditional EESDs construction include
electrode fabrication, electrolyte addition and device assembly. Although these processes are well optimized
for an assembly line production, 3D printed EESDs are desirables in markets with high demand for
customization, flexibility and design complexity. Moreover, it can also provide the integration platform for
EESDs and external electronics avoiding additional steps. Nevertheless, many technological challenges
need to be addressed before realizing a complete 3D printed energy storage systems. This Opinion only
explores the recent use of AM in the field of electrochemical energy storage devices (EESDs), mainly 3D
printed batteries and supercapacitors. Moreover, different design strategies, printing methods and compatible
materials already used in fabricating EESDs are discussed along with critical challenges and future
prospects.
2. 3D printed electrochemical storage devices (EESDs)
Fabrication of an electrochemical energy storage device has its own challenges mainly due to hierarchical
assembly of each individual component
i.e. current collectors, electrodes, separators and electrolyte.
2
Moreover, each printing method has a unique way of printing an object using specific feed material. For
example, powder bed fusion and binder jetting require solid feed while vat-photopolymerization, jetting and
direct ink writing need a liquid feed. Hence, understanding the capabilities of each printing method, feed
materials along with the overall design and chemistry of EESDs needs to be considered prior to the process
of 3D printing.
2.1. Materials and methods consideration
Selecting materials and printing method is a synergetic process where materials are formulated according to
the demands of the printing process based on the projected use in an EESD. As most of EESDs are fabricated
through material jetting or extrusion (i.e. Inkjet printing (IJP), direct ink writing (DIW) and fused deposition
modelling (FDM)), the characteristics of the raw material or ink are detrimental to mechanical and
electrochemical performance of the final device. For example, low viscosity inks form better droplets (ideal
for inkjet printing) while highly viscous inks tend to make continuous filaments that are suitable for extrusion
based printing. For inkjet printing, viscosity (μ), surface tension (σ), density (ρ) and the nozzle diameter (d)
can be optimized using Ohnesorge number 𝑍 = √ρσd µ⁄ and ink compositions with 1 < Z > 10 are generally
expected to produce stable droplets[10, 19, 20]. One of the problems generally faced during ink formulation
is the aggregation of conductive agents (i.e. carbon, graphene, CNTs, metal nanoparticles) which clogs the
extruding nozzle effecting the structure and the performance of EESD. Challenged by the same problem, Li
et al.[21] used a systematic approach (Figure 1a) by first exfoliating 2D material (graphene and Molybdenum
disulphide) into single or few-layers nanosheets in DMF (μ = 0.92 mPa·s) using a well-established liquid-
phase exfoliation technique followed by the addition of a compatible polymer (cellulose) in order to reduce
restacking of 2D materials. Later, another miscible solvent (terpineol; μ = 0.4 Pa·s) with lower toxicity and
higher boiling point is added to the dispersion while the exfoliating solvent (DMF) is distilled off. Due to low
viscosity requirement[22] for inkjet printing (μ = 0.1 Pa·s), the concentration of active material is limited to 2.0
g L-1 and 0.12 g L-1 for aqueous and organic dispersions, respectively[23, 24]. Hence, the dispersion (in
terpineol) was tailored with a third solvent (ethanol) to achieve the required rheology for inkjet printing. The
authors conclude that the selection of exfoliating solvent, stabilizing polymer, printable and tailoring solvent
are all important for an optimal inkjet printing process.
Contrary to IJP, inks for DIW must exhibit shear thinning behaviour with high stress and storage
modulus allowing shape retention of the extruded material during the process of deposition. Besides, the inks
must have a rapid solidification process and mechanical stiffness to support subsequent layers. As the
process uses highly viscous paste of feed material, not only the risk of clogging is reduced but high mass
loading of active materials can be achieved allowing significant improvement in areal capacity of EESD. As
an example, Kim et al.[25] formulated a polyvinylpyrolidone-wraped multiwalled carbon nanotubes (PVP-
MWCNT) based ink (7% MWCNTs and 17% PVP in water) with appropriate rheological properties for DIW
(Figure 1b). PVP was added to avoid agglomeration and nozzle clogging while the concentration MWCNTs
was high as 75% inside the final 3D structure. With such high MWCNTs content, authors were able to achieve
an electrical conductivity of 2540 S m-1 and highlighted the potential of using highly conductive inks for 3D
printed EESDs.
3
FDM is also an extrusion based printing method, contrary to DIW, it uses solid feed materials like
acrylonitrile-butadiene-styrene (ABS) or polylactic acid (PLA) which are melted through a computer controlled
nozzle and gets solidified immediately in a pre-defined 3D structure. Solidification of each layer is principally
based on crystallization and chain entanglement of the polymer, however, addition of additive materials can
affect the properties and solidification process of the matrix polymer. Common additives used in polymer
matrix
for EESDs are various conductive materials
like ABS/graphene[26], ABS/carbon[27],
PLA/graphene[28] and even PLA/LTO/carbon and PLA/LFP/carbon[29]* which are essential for electrode
fabrication in lithium ion batteries. A good example is a recent study[30]** where three conductive agents
(Super-P, MWCNTs, graphene) and two active materials (Lithium titanate, lithium manganese oxide) were
blended with PLA to test the printability, conductivity and charge storage capacity of the new composite.
Results showed that 30% of graphene, 20% of MWCNTs and 12% of Super-P can be mixed with PLA without
compromising their printability while maximum storage capacity was obtained using 80:20 ratio of conductive
and active material (Figure 1c). Regarding extremely low capacities (1-2% of theoretical capacities) obtained
for EESDs, authors claimed that it is the result of large % volume of PLA (70-80%) which was preventing
conductive agents to make electrical contact with the active material. Therefore, continuous efforts are being
made to increase the content of conductive agents without effecting the process of FDM based printing[27,
28, 31].
Figure 1. (a) Systematic strategy for preparing ink formulation for IJP. (b) DIW of PVP-MWCNTs based ink formulation,
(c) Capacities and different composition of conductive additives for FDM printed EESD. (inset) FDM based printed
electrodes and casing. (d) SLA-based printed EESD after pyrolysis. Reprinted with the permission of Wiley publications
and American Chemical Society.
4
Moreover, it is known that impurities in lower grade poly(lactic acid) and ABS plastics can influence
some electrochemical activity, and any method to increase the surface area of graphite-containing
thermoplastic by solvent[32]* or thermal decomposition[33] will obviously increase material-electrolyte
interactions. However, the intrinsic electronic and ionic conductivity in any printed electrode support material
or active material composite is paramount, especially in the out-of-plane direction in sandwich design, and
along the plane of in-plane designs. This is critical for intra- and inter-particle conductivity so that all active
material in a composite, or active material are the surface is electrically and thus electrochemically
addressable in a battery or supercapacitor. In the example in Figure 2, we show how the intrinsic surface of
a graphite-loaded PLA composite formed by FDM printing, can be modified by either solvent or thermal
decomposition, resulting in significant activation and enhancement of electrochemical activity for HER and
OER reactions, and for 'switching on' reversible galvanostatic charging and discharging in the 3D printed
electrodes of a printed PLA/ABS battery. In this case, we developed cell-to-cell clickable 3D printed battery
cells using ABS outer casing and graphite-loaded PLA as the current collector. These PLA electrodes were
coated which LiMn2O4 (anode) and LiCoO2 (cathode) slurried with carbon nanotubes (Figure 2a-c), and
separated by a SiO2-PVP gel containing LiNO3. This type of cell used acidic treatment of the PLA to open up
the surface and significantly improve interfacial contact between the active deposited material and the
graphitic conductive additive in the PLA. As this is an example of the sandwich type battery cell, the
conductivity out of plane of the electrode was important. Prior to PLA surface decomposition, Figure 2d
shows that the redox activity was negligible for this cell, and no reversible lithiation process found. Post
activation (Figure 2e), the cell was able to charge and discharge efficiently, holding a capacity of ~80 mAh
g-1. This basic concept is fundamental to all 3D printing materials for electrochemical technologies, whether
as supports, electrodes, current collectors or active material composites. Ionic and electronic conductivity
need to be controlled and optimized where possible (Figure 2f), and these needs dictate both the materials
choice and the method of printing from the outset.
Another possibility of printing highly complex 3D EESDs is to use vat-photopolymerization method
which on one hand offers layer resolutions up-to 50 µm[34] but limited by the choice of materials. It uses a
photo-curable resin consisting of monomers (acrylates or epoxy), photoinitiators (2,2-Dimethoxy-1,2-
phenylacetophenone (DMPA)), diluents (1,6 hexanediol diacrylate), chain transfer agents (Allyl sulphides)
and coupling agents. Monomers and photoinitiators are the main ingredients of the resin while the diluent,
chain transfer and coupling agents are used to manipulate viscosity, degree of crosslinking and the bondage
between reinforcement material and the resin, respectively[35]. Among them, the viscosity of the feedstock
is an important parameter which can affect the quality and build speed of the object and generally optimized
through diluents or controlling temperature. One recent study[36] provided a simple tool to investigate the
relationship between photocurable properties of the resin containing viscosity increasing agents while
another study showed how viscosity enhancing agent can be used to prevent particle agglomeration which
resulted in a stable dispersion for more than 10 days[37].
5
Figure 2. (a) SEM images of a graphite-PLA printed using FDM. Inset shows the porous morphology after acidic
porosification of the surface. (b) Image of the click 3D printed batteries. (c) SEM of the LiCoO2/CNT coated FDM printed
PLA electrode (black region in (b)). (d) Cyclic voltammograms of the activated and as-printed graphite-PLA electrodes
at scan rate of 0.5 mv s-1 in a flooded solution of aqueous LiNO3 electrolyte showing redox activity once PLA surface is
porous. (c) Galvanostatic charge-discharge profiles of the as-printed and activated PLA electrodes in the full battery cell
displaying over 2 orders of magnitude improvement in specific capacity post activation. (f) Section of FDM printed PLA
on ABS (green) and corresponding SEM image of a PLA cross-section. σꞱ and σ‖ represent perpendicular (out-of-plane)
and parallel (in-plane) electrical conductivity.
Similar to FDM, SLA-based printing of EESDs require conductive agents for the fabrication of EESDs.
One way is to deposit a metal layer after printing the desired shape[38] while second approach is to
incorporate conductive agent inside photocurable resins. Addition of silver nitrate[39] and MWCNTs[40, 41]*
in polyethylene glycol diacrylate (PEGDA) and acrylic based resin has already been reported with limited
electrical conductivity. However, Park et al.[42] used silver nanowires as conductive fillers inside acrylate
resin to construct a mechanically durable microstructure design. The conductivity of silver containing polymer
structure still showed high resistance of 200 M which was later reduced to 40 using pyrolysis of the
printed structure without compromising its structural integrity (Figure 1d). Other methods like powder bed
fusion, laminated object manufacturing and direct energy deposition are rarely been used to fabricate a
complete EESD, nevertheless, some reports have shown manufacturing metal current collectors for
EESDs[43-46]. Moreover, Senvol, a search engine for AM machines and related materials, provides useful
information about the properties of more than thousand different materials used in all commercial AM
machines[47].
2.1.1. Design considerations
Besides the geometrical architecture of individual electrodes, 3D printed batteries and supercapacitors are
mostly assembled using an in-plane or sandwiched design (Table 1). Each configuration has its own
advantages and disadvantages, and also affect the electrochemical performance of EESDs and hence their
application areas. For example, the sandwiched type EESDs are cost-effective with a potential of mass
6
production. In-place designs allow minimum footprint with enhanced ionic transport making it suitable for
tailored applications for ultrathin film batteries or supercapacitors. Exploring the potential of in-plane design,
Sun et al.[48] investigated the effect of electrode thickness by printing multiple layers of electrode material
and found that areal and volumetric capacitance of a supercapacitor show a linear increase with the number
of printing layers. Similarly, Lin et al.[49] showed that the areal capacity of an in-plane capacitor with shorter
interspace is higher than the capacitors with longer interspaces. However, printing compact designs with
shorter interspaces and thicker electrode layers is challenging due to the rheological properties of the
conductive ink which consists of binders, solvents, additives and active materials.
Table 1. 3D printed batteries and supercapacitors built using different designs and 3D printing methods.
Sandwiched Design
In-Plane Design
Tech
IJP
DIW
FDM
SLA
IJP
DIW
FDM
SLA
Type
s
e
i
r
e
t
t
a
B
s
r
o
t
i
c
a
p
a
c
r
e
p
u
S
Materials
Performance
Ag NPs
5 mA h cm-2
Ref
[50]
Type
LTO/LFP/SP/
14.5 mA h cm-2
[52]**
PVP
LTO/LMO
3.91 mAh cm−3
LTO/LFP
PANI-GP
500 mAh cm-2
864 F g-1
PLA/Graphene
485 µF g-1
Polymer/NiP/
250 mF cm-2
rGO
[30]
[55]
[57]
[28]
[38]
s
e
i
r
e
t
t
a
B
s
r
o
t
i
c
a
p
a
c
r
e
p
u
S
Tech
IJP
DIW
FDM
SLA
IJP
DIW
FDM
SLA
Materials
Performance
rGo/LTO/NCA
0.35 mAh
LTO/LFP/rGO
1.5 mAh cm-2
--
--
NiSn/LMO
2 µAh cm-2 µm-1
rGO
0.1 mFcm-2
PANI/GO
1329 mFcm-2
ABS/CB
12 µF cm-2
Pyrolized
0.206 mF cm-2
polymer
Ag NWs
Ref
[51]
[53,
54]
--
[56]
[58]
[59]
[27]
[42]
One observation worth noting during our literature search was that in-plane designs are preferred (or
at least more common) when EESDs are fabricated using DIW and IJP, while sandwich designs is readily
used for FDM and SLA-based 3D printing. We believe that FDM and SLA uses insulating polymer matrix and
principles behind these printing methods allow limited choice for making conductive composites which are
essential for constructing an EESD. A second more fundamental reason is that FDM and especially SLA-
based 3D printing can create objects in full form factor directly (coin cells, thin film cells, outer casing as well
as complex electrodes) in a single or multistep print. IJP by comparison is essentially a planar printing process
whose 3D construction is a bottom up process and this fundamentally limits the complexity of single printed
structures. In a recent study[53] SLA technology was used to make polymer graphene based conductive
substrates, which were then electrophoretically coated with anode material (LTO), LiAlO2-PEO membrane
and cathode material (LFP) using a tri-layer sandwiched design. Cells cycled at 0.1C provided areal capacity
of 400-500 µAh cm-2.
7
Whether its sandwiched or in-plane design, the nature of charge storage process is always an
important consideration before the selection of materials and method. Surface pseudocapacitive storage and
electrochemical double layer capacitance will benefit from a higher surface to volume ratio, which can be
achieved by etching or selective decomposition of the composite printed thermoplastic or photocurable resin.
This is useful so long as the mechanical integrity of the printed object is not comprised by solvent, heating or
excessive degree of porosity. Secondly, a high surface area material capable of capacitive charge storage is
only useful in devices if the printed material is sufficiently electrically conductive, and mass loading within the
feed material prior to printing is considered. Thus, the 3D printing technique involves final device operation
and material selection. However, the situation is more pronounced when the internal volume fraction of
additive material must be both conductive and accessible to Li (or other) ions to maximize volumetric and
gravimetric energy density or areal capacity.
3. Conclusions
With new developments and reducing cost, AM and 3D printing in particular has the potential to revolutionize
existing fabrication process where objects with complex structures and shapes can be built with
multifunctional material systems. Nevertheless, AM suffers from many challenges and most of these
challenges[61, 62]* are centred around build speed, mechanical properties of the final product, resolution of
each printed layer, potential of using conductive feed material with an option of multi-material 3D printing.
For EESD applications, and to some extent other electrochemical system such as water splitting, hydrogen
generation, photo-electrochemistry and electrochemical sensors as pertinent examples, the choice of
material, the nature of the final print in terms of composition, together with the attributes of the print specific
to the application, will dictate the printing method used. There remains much to be developed to make any
truly 3D printable EESD, i.e. with a customizable, non planar shape or form-factor, competitive with most
forms of existing li-ion and supercapacitor technology. Although, IJP as an approach for supercapacitors is
making some headway in this regards, as the method and the aqueous electrolyte requirements are less
stringent that those for higher voltage Li-ion or alternative battery chemistry systems.
Acknowledgements
This work is supported by European Union's Horizon 2020 research and innovation programme under grant
agreement No 825114. We also acknowledge funding support from Science Foundation Ireland (SFI) under
Awards no. 14/IA/2581 and 15/TIDA/2893, and from the Irish Research Council Advanced Laureate Award
under grant no. IRCLA/2019/118. The authors thank Dr Vladimir Egorov for FDM printing of the PLA-ABS
sample.
Declaration of interest
None
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11
|
1804.08702 | 1 | 1804 | 2018-03-30T08:14:47 | Reliability assessment in advanced nanocomposite materials for orthopaedic applications | [
"physics.app-ph"
] | Alumina-zirconia nano-composites were recently developed as alternative bearing materials for orthopedics. Previous, preliminary reports show that such alumina-zirconia nanocomposites exhibit high crack resistance and low wear rate. In this paper, additional information is given in terms of wear, crack resistance and ageing behaviour: femoral heads are inspected after 7 million cycles of wear testing on a hip simulator, crack resistance is measured and compared to other ceramics used today in orthopedics, slow crack growth is reported under static and cyclic fatigue, and aging resistance is assessed. We also report on the load to failure of femoral heads prototypes during compression tests. This overall reliability assessment ensures a potential future development for these kinds of new nanocomposites in the orthopedic field. | physics.app-ph | physics | Reliability assessment in advanced nanocomposite
materials for orthopaedic applications
Jérôme Chevaliera, Paola Taddeib, Laurent Gremillarda, Sylvain Devillea, Gilbert Fan-
tozzia, J. F. Bartoloméc, C. Pecharromanc, J.S. Moyac, L.A. Diazd, R. Torrecillasd,
Saverio Affatatoe
a Université de Lyon, INSA Lyon, MATEIS - UMR CNRS 5510,
69621 Villeurbanne Cedex, France
b Centro di Studio sulla Spettroscopia Raman, Dipartimento di Biochimica "G. Mo-
ruzzi", Sezione di Chimica e Propedeutica Biochimica,
Via Belmeloro 8/2, Università di Bologna, 40126 Bologna, Italy
c ICMM, Spanish Research Council (CSIC), Campus Canto Blanco, Madrid, Spain
d INCAR, Spanish Research Council (CSIC),
La Corredoria s/n Ap. 73, 33080 Oviedo, Spain
e Laboratorio di Tecnologia Medica, Istituto Ortopedico Rizzoli, Bologna, Italy
Abstract
Alumina-zirconia nano-composites were recently developed as alternative bearing
materials for orthopedics. Previous, preliminary reports show that such alumina-
zirconia nanocomposites exhibit high crack resistance and low wear rate. In this paper,
additional information is given in terms of wear, crack resistance and ageing behaviour:
femoral heads are inspected after 7 million cycles of wear testing on a hip simulator,
crack resistance is measured and compared to other ceramics used today in orthopedics,
slow crack growth is reported under static and cyclic fatigue, and aging resistance is
assessed. We also report on the load to failure of femoral heads prototypes during
compression tests. This overall reliability assessment ensures a potential future
development for these kinds of new nanocomposites in the orthopedic field.
Keywords : Ceramic nano-composites, Crack resistance, Aging resistance, SEM,
AFM, Photoluminescence
1
1. Introduction
Nowadays, the main issue for THR is the generation of wear debris produced mainly
by the acetabular component (Campbell et al., 2004). Standard artificial hip joints
consist of a polymer cup made of Ultrahigh Molecular Weight Polyethylene
(UHMWPE), placed in the acetabulum via a metal-back component, and a metal
(stainless steel or cobalt chromium alloy) ball fixed to a metal stem introduced in the
femur. Any use of the joint results in cyclic stress of the polymer cup against the metal
ball. During the reciprocating motion of normal joint use, UHMWPE fibrils are then
released, mostly by adhesive wear, to form billions of pieces of sub-micrometer wear
debris that shed into the surrounding synovial fluid and tissues with negative biological
effects. It is currently believed that the UHMWPE particles generated at the contact
surfaces enter the periprosthetic tissues where they trigger a macrophage reaction.
Then macrophages release pro-inflammatory cytokines that stimulate osteoclastic bone
resorption, leading to osteolysis and eventual loosening of the prosthesis and a need for
revision. This has led to the development of alternative surfaces for hip articulation
such as ceramic-on-UHMWPE, metal-on-metal and ceramic-on-ceramic couplings. In
the former coupling, the amount of ion released can be detrimental to the surrounding
tissues; in comparison, the use of bio-ceramic materials reduces wear rate and produces
no metal ion release. Due to the low roughness exhibited by ceramic heads (typically
lower than a few nanometres) and their good wettability, abrasion is reduced signifi-
cantly if ceramic femoral heads are used with acetabular cups made of polyethylene
and almost completely avoided when using ceramic femoral heads together with ceramic
cup inserts.
The clinical success associated to the use of ceramics led to the implantation of more
than 3.5 million alumina components and more than 600.000 zirconia femoral heads
worldwide since 1990, with a strongly growing market (i.e. more than 25% growth for
the alumina–alumina coupling between 2002 and 2004). There are many reports on
fracture rates associated with ceramics. Important references have been compiled else-
where (Campbell et al., 2004). If, in the pioneering days, the fracture rate was quite
high (up to 13% for some series), the in vivo failure rate reported by the producer of
Biolox® alumina is today below 0.01% (Willmann, 2000). A comparable failure rate was
claimed by the producer of Prozyr® zirconia heads (Cales, 2000). Critical events in 2001
are discussed below.
If the clinical follow up with current alumina ceramics is significant, it must be kept in
mind that their use has been restricted so far to a limited number of designs of hip
components, for which the mechanical loading is less demanding. As an example, 22 mm
heads are not currently manufactured using alumina ceramics, for reliability reasons.
Alumina–alumina coupling also exhibits a significant increase of failure rates. This is
2
again related to its modest mechanical properties. In the 90's, Yttria-Stabilized Zirco-
nia became a popular alternative to alumina as structural ceramic because of substan-
tially higher fracture toughness and strength. The use of zirconia has opened the way
towards new implant designs that were not possible with alumina which was too brittle.
Biomedical grade zirconia exhibits the best mechanical properties among single-phase
oxide ceramics: this is the consequence of phase conversion toughening, which increases
its crack propagation resistance. The stress-induced phase transformation involves the
transformation of metastable tetragonal grains to the monoclinic phase at the crack
tip. It is accompanied by volume expansion and induces compressive stresses that hin-
der crack propagation. On the other hand, due to this meta-stability, zirconia is prone
to aging in the presence of water (Chevalier, 2006). Zirconia manufacturers considered
this problem as a minor issue until 2001, when roughly 400 failures of zirconia heads
were reported within a very short period. The failure origin is now associated to an
accelerated aging in two particular batches. Even if limited in time and number, and
clearly identified to be process controlled, these events have had a catastrophic impact
for the use of zirconia, some surgeons returning to other solutions. More important,
some clinical reports show that zirconia can exhibit a progressive ageing degradation
even under 'normal' situations, which limits the long-term stability of zirconia (Cheva-
lier et al., 2007).
For these different reasons, there is a trend to develop stronger and more reliable ce-
ramics that should expand the field of application of bio-inert ceramics in orthopaedics.
Alumina–zirconia micro-composites (with both alumina and zirconia grains in the mi-
crometer range) are today under development in the orthopaedic community and show
improvement in mechanical properties and aging resistance (De Aza et al., 2002; Deville
et al., 2003; Willmann, 1998). In a previous work, new alumina–zirconia composites,
with an alumina matrix in the micrometer range and nano-sized zirconia particles have
been developed (Chevalier et al., 2005). In the best cases (1.7 vol.% of intra-granular
zirconia nano-particles in alumina), they exhibited fracture resistance properties that
were never reached with oxide ceramics before. Wear tests were also run on a hip
simulator at 7 million cycles and show that wear rates of these composites were com-
parable to alumina–alumina couplings, ensuring excellent wear properties as compared
to metal–metal or metal–polyethylene coupling (Affatato et al., 2006). Following these
promising preliminary results, our aim was therefore to give a complete picture of the
wear resistance and mechanical properties of these nanocomposites, associated to long-
term durability assessment.
Our aim was therefore first to inspect the surface of the components already tested at
7 million cycles on a hip simulator to investigate possible damage after wear.
3
If wear and potential debris release is one key issue for hip joint replacement, the
potential of a new ceramic material must also include its sensitivity to slow crack
growth and delayed failure, which is not taken into account in the sole strength and
toughness data. As a general trend, the susceptibility of ceramics to Slow Crack Growth
(SCG) is discussed on the basis of a V(crack velocity) versus KI (stress intensity factor)
diagram (KI representing the stresses at the tip of a crack or any pre-existing defect
such as a pore, a scratch, etc., in the ceramic). Recently, the presence of a threshold in
the stress intensity factor, under which no crack propagation occurs, has been the
subject of important research in the ceramic field (Wan et al., 1990). This threshold
corresponds to equilibrium with null crack velocity. For ceramic joint prostheses for
example, this threshold, KI0, determines a safety range of use (De Aza et al., 2002).
Due to the tendency of ceramics to undergo cyclic fatigue degradation (i.e. a decrease
of KI0 and an increase of crack rates), Slow Crack Growth (SCG) analysis must include
cyclic fatigue experiments, which is rarely done in the bio-ceramics literature (Attaoui
et al., 2005; Chevalier et al., 1999c; Dauskardt et al., 1994). Our aim was therefore to
characterize deeply the SCG resistance under static and cyclic fatigue of the present
nanocomposite material in comparison to biomedical grade alumina, zirconia and to a
conventional alumina–zirconia micro-composite.
The addition of alumina to zirconia at least reduces drastically aging kinetics. It is
shown that the strength of Biolox delta® for example does not decrease even when
repeatedly steam sterilized. However, 'no decrease in strength' does not necessarily
mean 'no aging', since other manifestations of ageing are grain pull out and roughening
(Chevalier, 2006; Chevalier et al., 2007). Few studies have been devoted to aging in
alumina–zirconia systems, but they show that, even if limited and possibly reduced to
zero, some degree of degradation can be observed, depending on microstructural fea-
tures. As an example, we showed in a previous work (Pecharroman et al., 2003) that
aging could be significant in a 3Y-TZP–alumina composite above 16 vol.% zirconia.
This critical content was related to the percolation threshold above which a continuous
path of zirconia grains allowed transformation to proceed. The presence of aggregates
in the microstructure may be also detrimental (Gutknecht et al., 2007). Any extrapo-
lation to other laboratory scale or industrial composites could be hazardous, but it
shows how aging must be checked carefully prior to clinical development of a given
alumina–zirconia composite.
Accelerated aging tests were therefore conducted on the present material to ensure its
perfect aging resistance.
At last, the development of a new material for hip joint applications must include the
measurement of mechanical properties on real components. Therefore, we report here
4
on the load to failure of femoral head prototypes during compression tests for a specific
design where commercial alumina fail to follow ISO specifications.
2. Materials and methods
2.1. Materials preparation
The processing route to obtain the nano-composites specimens was described in detail
elsewhere (Chevalier et al., 2000; Schehl et al., 2002). It consists in doping a stable
suspension of a high purity alumina powder (Condea HPA 0.5, with an average particle
size of 0.45 μm and a surface area of 10 m2/g) in ethanol absolute (99.97%) by drop
wise addition of a diluted (2/3 vol.% Zr alkoxide, 1/3 vol.% ethanol absolute) zirconium
alkoxide (Aldrich Zirconium-IV-propoxide 70 wt% solution in 1-propanol). In the pre-
sent work, a low amount of zirconia precursor was added, in order to obtain composites
with only 1.7 vol.% (2.5 wt%) zirconia nano-particles. After drying under magnetic
stirring at 70°C, the powders were thermally treated at 850°C for 2 h to remove organic
residues and were subsequently attrition milled with alumina balls for 1 h. Green com-
pacts were then obtained by a pressure-casting method. The optimum sintering to
obtain the desired nano-structural distribution of zirconia particles consisted of a ther-
mal treatment of 1600 °C/2 h. Fig. 1 shows the microstructure of the material, consist-
ing in zirconia nano-particles (D50≈150nm) evenly distributed in the alumina matrix
(D50≈5μm). Those zirconia particles were found to be mainly (>70%) intragranular,
with almost perfect spherical shape. These particles are well below the critical size for
phase transformation (Schehl et al., 2002). All ceramics were fully dense.
2.2. Inspection of worn ceramic components after 7 million cycles
Twelve 28 mm×44 mm ceramic femoral heads, processed under the conditions men-
tioned above, were articulated with twelve ceramic acetabular cups of the same com-
position. The following configurations were tested on a hip simulator under bovine calf
serum as a lubricant:
•
•
•
four commercially available alumina heads and acetabular cups (Biolox forte® in
the following referred to as AL);
four experimental pure alumina heads and acetabular cups (in the following
referred to as BK);
four experimental nanocomposite heads and acetabular cups (in the following
referred to as NK).
Major details about this experimental in-vitro test are available in literature (Affatato
et al., 2006).
5
Fig. 1. Microstructure of monolithic alumina (a), yttria stabilized zirconia (b), conven-
tional alumina–zirconia composite (c) and of the advanced nano-composite material
(d).
2.3. Scanning Electron and Atomic Force Microscopy observa-
tions
Scanning Electron Microscopy (SEM, XL-20, FEI, Netherlands) observations were con-
ducted at the surface of a commercial alumina head (AL), an experimental alumina
head (BK) and a NK head after 7 million cycles. The heads were coated with a gold
layer of 10 nm prior to observations.
Atomic Force Microscopy (AFM, D3100, Digital Instruments) measurements were con-
ducted at the surface of the same heads. The Atomic Force Microscope (AFM) was
used in contact mode, with an oxide-sharpened silicon nitride probe exhibiting a tip
radius of curvature of 20 nm. The scans were performed at the surface with an average
scanning speed of 10 μm/s. The scans were all conducted on the same day (i.e. with
the same probe, with the same state) to lower the scatter of the data and to obtain
comparative results. Different zones of the same head were observed in order to get
statistical data. A computer-assisted treatment was conducted to suppress the round-
ness of the heads and to obtain Ra (roughness) values. These values were compared to
those measured on the as-processed heads, i.e. before the wear tests.
6
2.4. Photoluminescence measurements
The surface residual stress state in the acetabular cups was measured via a piezospec-
troscopic technique, widely applied to the study of alumina and alumina–zirconia com-
posites (Garcia et al., 2002; Ma and Clarke, 1994, 1993; Merlani et al., 2001; Sergo
et al., 1998). The piezospectroscopic effect may be defined as the shift, induced by
strain, in the frequency of a spectral band. The bands here considered to evaluate the
residual stress state were the R1 and R2 fluorescence bands (at about 14 400 cm−1 and
14 430 cm−1, respectively), which have a long known and well-defined stress dependence
(Garcia et al., 2002; Ma and Clarke, 1994, 1993; Merlani et al., 2001; Sergo et al., 1998).
Photoluminescence is due to the radiative electronic transitions of the Cr3+ ions, natu-
rally present in alumina ceramics as trace impurities which substitute the Al3+ ions in
the Al2O3 lattice (He and Clarke, 1995; Selcuk and Atkinson, 2002). The origin of the
piezospectroscopic effect is that when the lattice of ions surrounding the Cr3+ is dis-
torted, for instance by an applied stress, the crystal field potential at the site of the
Cr3+ ion is altered, which, in turn, alters the energies of the electronic transitions. Thus,
the analysis of the fluorescence spectrum of Cr3+-doped alumina can give information
on the residual stress state of the sample. Moreover, the intensity of the above men-
tioned bands was used to non-destructively investigate the surface finishing of the ace-
tabular cups, according to other authors (Garcia et al., 2002).
The fluorescence spectra were obtained using an argon–krypton laser (Innova Coherent
70) operating at 488 nm to excite the fluorescence and a Jasco NRS-2000C micro-
Raman spectrometer equipped with a 160 K frozen digital CCD detector (Spec-10:
100B, Roper Scientific Inc.) to collect the excited fluorescence. To ensure that no laser
heating occurred and contributed to the observed frequency shifts, all measurements
were performed at a low laser power (i.e. 1 mW). Instrumental fluctuations represent
another source of possible variation in the measured frequency. In order to correct for
this, a characteristic neon line at 14 431 cm−1 was used as a frequency calibration
standard.
The spectra were recorded in back-scattering conditions with 1 cm−1 spectral resolution
using an objective lens of 10× magnification; the laser spot size was larger than the
grain size of the ceramics, assuring that the fluorescence was being averaged over a
large number of grains. Moreover, to obtain a good representation of the stress distri-
bution, ten spectra were collected in ten different points of each sample.
Ten spectra were recorded, on each sample, in the inner surface near the centre (in a
spatial range of about 1.5 mm from the centre). A soaked unworn cup of each set of
specimens was analyzed as control.
7
The bands monitored were at about 14 396 cm−1 (R1) and 14 424 cm−1 (R2). Their
width (expressed as full width at half maximum, FWHM), intensity and frequency were
determined by fitting the experimental spectra with mixtures of Lorentzian and Gauss-
ian functions. The fitting was done using a commercial software (OPUS 5.0, Bruker
Optik GmbH, Germany).
2.5. Crack resistance measurements
Short-crack resistance curves (R-curve behaviour) were measured and analyzed by the
indentation-strength in the bending (ISB) method (Braun et al., 1992) using prismatic
bars in which the centres of the tensile faces, polished down to 1 μm, were indented
with a Vickers diamond at contact loads, P, between 10 and 500 N. The specimens
were tested at room temperature using a three-point support with a span of 40 mm in
an universal testing machine (Instron Model 4411). The specimens were loaded to fail-
ure with a cross-head speed of 0.05 mm/min. The mechanical test was performed im-
mediately after indentation to avoid any subcritical crack growth due to stress corrosion
effects. Special effort was made to examine all specimens after testing using reflected
light optical microscopy (Leica, DMR model), to verify that the indentation contact
site acted as the origin of failure. R-curves were measured considering a radial crack c
produced by the indentation at a load P and subjected to the action of a tensile stress
σa due to the applied stress load during three-point bending. During post-indentation
bending, the crack is subjected to a total stress intensity, Kt, which is the sum of
contributions from the residual stress intensity factor acting on the indentation crack
resulting from the elastic–plastic mismatch associated with the indentation, Kr, and
the stress intensity factor resulting from the applied stress, Ka:
Kt(c)=Ka(c)+Kr(c)=ψ⋅σa⋅c1/2+ξ⋅(E/H)1/2⋅P/c3/2=KR(c) (eq. 1)
where ψ is a crack geometry factor, ξ is the dimensionless geometrical constant, E is
Young's modulus, H hardness, and KR is the crack resistance of the material. For a
given indentation load, P, failure is assumed to occur at the stress where the applied
stress σa is equal to the fracture stress, σf, which satisfies the following balance and
tangency conditions:
Kt(c)=KR(c) (eq. 2)
dKt(c)/dc=dKR(c)/dc (eq. 3)
The R-curve is determined by solving Eqs. (2) and (3) for each beam simultaneously.
8
2.6. Crack velocity functions and threshold determination
Crack velocities from 10−12 m s−1 (necessary for threshold determination) to 10−2 m s−1
(fast fracture) were measured by the double torsion technique, in order to get insight
on the crack velocity versus stress intensity factor functions. The double torsion speci-
mens (40 mm∗20 mm∗2 mm plates) and the loading configuration are shown in Fig. 2.
The tensile surface is polished down to 1 mm in order to observe the crack with a
precision of ±2 mm. A notch of dimension ao=10mm and root ρ=0.1mm is machined
with a diamond saw and an indentation performed at low load (5 kg) in order to initiate
a small crack. Subsequent pre-cracking is performed by loading the specimens at low
rate in order to induce a 'real' sharp crack of initial length ai=12mm. The double
torsion configuration has for a long time been known to give rise to a stress intensity
factor which is independent of crack length, given by (Shyam and Lara-Curzio, 2006):
𝐾=2
3(1+)
1/2 (eq. 4)
P is the load, Wm the span, U and W the width and the thickness of the specimen, ν
the Poisson's ratio (taken here as equal to 0.3), and ψ a calibration factor.
Fig. 2. Double Torsion specimen and loading configuration.
However, it has been demonstrated recently, both experimentally and by numerical
simulation (Chevalier et al., 1996; Ciccotti, 2000) that KI is slightly dependent on the
crack length. To obtain accurate V–KI diagrams a correction factor should be intro-
duced in the conventional expression of KI, as expressed with the following empirical
equation:
𝐾=𝐻𝑃 0
(eq.5)
a0 is the notch length and a is the total crack length. γ depends on the geometry of the
test sample. For the dimensions used for the present study γ=0.19 (Chevalier et al.,
1996).
9
Crack velocity functions were determined via two methods: relaxation tests and con-
stant-loading tests. The load-relaxation method, which was first reported by Williams
and Evans (1973), was used to obtain the slow crack growth V–KI diagrams in the
velocity range 10−2–10−7 m/s. This method does not allow measurements at very low
velocity but it does present the advantage of being quick to obtain measurements at
high velocities. Pre-cracked specimens are loaded at a constant rate of 0.2 mm/min,
followed by subsequent stopping of the cross-head at constant displacement, when the
crack starts to propagate. The obtained load-relaxation versus time (P versus t) plot
allows the determination of the V–KI curve by a compliance calibration (Chevalier
et al., 1996; Ciccotti, 2000; Shyam and Lara-Curzio, 2006; Williams and Evans, 1973).
Measurement of the crack velocities V under constant load presents the advantage of
allowing the measurement of very low velocities, down to 10−12 m/s. Thus, the speci-
mens are subjected to different static loads under a prescribed duration Δt. The crack
length is measured via optical microscopy, with a precision of ±2 μm, and V is defined
as the ratio of crack increment Δa to the duration Δt:
𝑉=∆∆
(eq. 6)
Crack velocities were also measured under cyclic loading, at a frequency of 1 Hz on the
same testing machine than for static fatigue measurements, which presents the ad-
vantage of allowing a direct crack velocity comparison with static tests. The specimens
were loaded at an imposed sine shape load between Pmin and Pmax, for a given duration
Δt. The R=KImin/KImax=Pmin/Pmax ratio was selected to 0.1. The crack length increment
Δa was again measured by optical microscopy with a precision of ±2 mm and the crack
velocity V by Eq. (3).
2.7. Aging resistance
The transformation being both thermally activated and accelerated by the presence of
water, samples were put in an autoclave in steam during controlled duration at 134 °C,
under 2 bars pressure, in order to induce the phase transformation at the surface with
time. Knowing the thermal activation (−106 kJ/mol) of the aging process (Chevalier
et al., 1999a), it is possible to calculate that 1 h of such a treatment would correspond
roughly to three years in vivo. The transformation was followed by measuring the mon-
oclinic phase fraction evolution by X-ray diffraction (XRD). XRD data were collected
with a 𝜃-2𝜃 diffractometer using the Cu-Kα radiation. Diffractograms were obtained
from 27° to 33°, at a scan speed of 0.2 °/min and a step size of 0.02°. The monoclinic
phase fraction Xm was calculated using the Garvie and Nicholson method (Garvie and
Nicholson, 1972), modified by Toraya et al. (1984):
10
𝑋=
−111+(111)
−111+111+(101)
𝑉= 1.311
1+1.311
(eq. 7)
(eq. 8)
It and Im represent the integrated intensity (area under the peaks) of the tetragonal
(101) and monoclinic (111) and (−111) peaks. The monoclinic volume fraction, Vm, is
then given by:
2.8. Fracture resistance of femoral heads prototypes
Compressive loads to failure of NK heads were performed according to ISO-DIS 7206-
10 protocol. In order to evaluate the potential of the nano-composite for critical designs,
28 mm long neck femoral heads were coupled with CrCo conical tapers. 7 heads were
loaded in compression (crosshead speed: 0.5 mm/min) according to the configuration
of Fig. 3, on a universal INSTRON hydraulic testing machine. 7 AL femoral heads were
tested with the same testing configuration.
Fig. 3. Testing configuration for the measurement of the fracture resistance of alumina–
zirconia nanocomposite prototype femoral heads.
3. Results and discussion
3.1. Inspection of worn ceramic components after 7 million cycles
Strain can induce a shift of the characteristic frequencies of spectral bands, i.e. Raman,
infrared or luminescence bands. However, in this work we concentrated on the R1 and
R2 fluorescence bands as a function of stress. The reason for this is that the fluorescence
signal is several orders of magnitude greater in intensity than the Raman bands (Fig. 4)
and hence more precise measurements can be conducted.
11
Fig. 4. Photoluminescence (a) and Raman (b) spectra of a control unworn commercial
alumina acetabular cup. The R1 and R2 fluorescence bands (a) are several orders of
magnitude greater in intensity than the Raman spectrum. The fluorescence spectrum
was fitted into the two R1 and R2 components to more precisely evaluate band frequen-
cies, intensities and FWHM.
All the samples contained an adequate Cr3+ impurity level for the R1 and R2 bands to
be recorded with a high signal-to-noise ratio, so that precise measurements of band
frequency, intensity and FWHM were assured. As an example, Fig. 4(a) reports the
fluorescence spectrum of a control unworn commercial alumina acetabular cup fitted
into the two R1 and R2 components.
The data obtained from the fitting of the photoluminescence spectra are reported in
Table 1. By comparing the three sets of control unworn specimens, the most significant
observable change involved the intensity of both R1 and R2 bands; less significant
changes were observed for their frequencies and FWHM. As regards the latter, its value
has been reported to be correlated with grain size and microcracking. Actually, mi-
crocracks are more easily formed in materials with large grain size (Rice and Pohanka,
1979) and are known to reduce the width of the Gaussian residual stress distribution
and thus the FWHM of the fluorescence bands (Ortiz and Suresh, 1993).
12
Table 1. Frequency, intensity and full width at half maximum (FWHM) of the R1 and
R2 bands (mean values ± standard deviations) as obtained by fitting the experimental.
a Mean values obtained on three worn cups.
Sample
Control
Commer-
cial
alumina Worn a
Experi-
Control
mental
alumina Worn a
experi-
Control
mental
NZTA
Worn a
Frequency
(± standard
deviation)
14 396.2 ± 0.1
R1 band
intensity
(± stand-
ard devia-
tion)
45 ± 2
FWHM
(± standard
deviation)
Frequency
(± standard
deviation)
R2 band
intensity
(± stand-
ard devia-
tion)
FWHM
(± stan-
dard devia-
tion)
11.63 ± 0.05 14 424.2 ± 0.1 30 ± 1
9.59 ± 0.02
14 396.1 ± 0.1 45 ± 2
14 396.0 ± 0.1 18 ± 2
11.57 ± 0.08 14 424.1 ± 0.1 30 ± 1
11.52 ± 0.02 14 424.0 ± 0.1 12± 1
14 396.1 ± 0.2 17 ± 2
14 395.8 ± 0.1 25 ± 2
11.50 ± 0.04 14 424.2 ± 0.1 12 ± 1
11.39 ± 0.01 14 423.7 ± 0.1 16 ± 1
9.52 ± 0.04
9.31 ± 0.01
9.31 ± 0.09
9.35 ± 0.01
14 395.8 ± 0.1 25 ± 2
11.38 ± 0.06 14 423.8 ± 0.1
16 ± 1
9.31 ± 0.06
As can be easily seen from Table 1, the intensity of the fluorescence bands for the
unworn control samples increased along the series: BK<NK<AL.
Recent studies have indicated the dependence of photoluminescence on surface quality
(Garcia et al., 2002). It can be affirmed that the higher the roughness of the sample,
the lower the photoluminescence intensity. In fact, pores or scratches act as scattering
centers of the incident laser beam and reduce the transmission and hence excitation
depth. In this light, it can be affirmed that commercial alumina showed the best surface
finishing. Going from this set of samples to NK the surface quality worsened and the
worsening was even more pronounced for experimental alumina. However, it should be
remembered that the analyzed NK and experimental alumina specimens were only
prototypes and therefore their surface finishing can be worse than for a production
type, as previously observed for ceramic couplings (Affatato et al., 2001). Hip joint
wear simulator tests did not significantly alter the surface finishing and residual stress
state of the three sets of acetabular cups; no significant changes in frequency and
FWHM of the R1 and R2 bands were observed upon wear testing (Table 1). However,
it must be recalled that from a statistical point of view, the three sets of specimens did
not show significant differences in wear behaviour in hip joint wear simulator tests
(Affatato et al., 2006). Interestingly, gravimetric measurements showed the same trend
as photoluminescence intensities: the highest and lowest weight losses were observed
for AL and BK samples, respectively, while the NK specimens were characterized by
intermediate weight losses (Affatato et al., 2006).
13
These findings suggest that the better the sample finishing, the better the wear behav-
iour. Therefore, full density should be reached to limit wear in ceramics. This is par-
ticularly true for the cups, where it is hard to obtain excellent forming conditions and
surface finishing (concave surface).
Scanning Electron Microscopy (Fig. 5) and Atomic Force Microscopy (Table 2) obser-
vations confirm the fact the commercial alumina exhibits the best initial surface finish,
followed by NZTA and experimental alumina prototypes. This leads then to less surface
damage after 7 million cycles. Even if the damage is low for all ceramics of the study,
it can be argued that the experimental alumina exhibits the most important amount
of grain pull out and third body wear. We must remind however, the amount of wear
debris generated by such ceramic–ceramic configurations is exceptionally low when
compared to standard metal–polyethylene or even ceramic-polyethylene.
Table 2. Ra (roughness) values measured at the top of a commercial alumina head (AL),
an experimental alumina head (BK) and a NK head, before and after 7 million cycles.
Ra (0 Mc)
Ra (7 Mc)
Commercial
alumina (AL)
2.3 (nm)
3.0 (nm)
Experimental
alumina (BK)
7.1 (nm)
18 (nm)
Experimental
nano-composite (NK)
5.1 (nm)
11 (nm)
3.2. Crack resistance measurements
The fracture behaviour of short cracks has been studied in flexure using the indentation
method to produce controlled surface cracks. The advantage of this technique is that
it is able to provide an assessment of the mechanical properties at the correct micro-
structural length scale. The R-curve behaviour is caused by the increase of fracture
toughness with increasing crack length due to crack-tip process zone phenomena and/or
crack bridging due to interlocking grains. For example, in a coarse grained alumina
(∼16 μm grain size) the fracture toughness saturates at ∼6 MPa m1/2, which is about
double its short crack value (Reichl and Steinbrench, 1988). Whilst this is an impressive
increase in fracture toughness in a material, it should be realised that the critical flaws
in these experiments were much larger (>1 mm) than would be encountered in real
components. On the other hand, for short cracks in the range of 50–200 μm, the effect
of these toughening mechanisms can be significantly reduced. Therefore, in applications
where small cracks are of interest, i.e., in biomedical implants, R-curves measured on
long cracks are not relevant. On the contrary, the increase in the initial fracture tough-
ness and the crack growth resistance in the short crack region (<100 μm) is necessary.
Moreover, the fracture toughness operative at small crack-size scales is a relevant ma-
terial property which controls deformation response during wear (Scattergood et al.,
1991).
14
Fig. 5. Scanning Electron Microscopy images of ceramic heads after 7 millions cycles
hip simulator study. (a) Commercial alumina (AL), (b) experimental alumina (BK),
(c) experimental alumina–zirconia nano-composite (NK).
The resulting short-crack resistance curves obtained for alumina, zirconia, zirconia
toughened alumina "micro"-composite and nanostructured alumina–zirconia composite
have been plotted in Fig. 6. The result for the alumina shows no such rising R-curve.
For monolithic alumina, the main toughening mechanism was grain bridging by large
elongated Al2O3 grains behind the crack tip. Due to the small grain size of the biomed-
ical grade alumina, no bridging effect would be expected.
15
Fig. 6. Short-crack resistance curves obtained for biomedical grade alumina, yttria sta-
bilized zirconia, conventional zirconia toughened alumina 'micro'-composite and cur-
rently developed nano-structured alumina–zirconia composite.
The alumina–zirconia nanocomposite specimens show a flat R-curve with the highest
toughness value. In these nanocomposites, the toughening mechanisms operate on a
scale smaller than that of the matrix microstructure, enhancing the "intrinsic" fracture
properties of the material.
On the other hand, zirconia and alumina–zirconia "micro"-composites show a slight
rising crack growth resistance with crack extension due to a transformation toughening
mechanism that promote a process zone in the neighbourhood of the crack tip. Con-
sistent with the very fine microstructure and the relatively narrow transformation zone
of these ceramics, the R-curve rises steeply during the first 100 μm extension of the
crack. Over this crack length, fracture resistance reaches a plateau toughness, meaning
that toughness no longer increases with crack extension.
3.3. Crack velocity functions and threshold determination
Fig. 7 shows crack velocity diagrams under static loading, for the nanostructured alu-
mina–zirconia composite, standard biomedical grade alumina and zirconia ceramics,
and for a zirconia toughened alumina 'micro'-composite developed previously. The re-
sults for the four ceramics show the typical three stages of Slow Crack Growth (SCG)
and a threshold, below which no crack propagation occurs. The threshold (KI0), was
determined from the points on the V–KI diagram, below which there is an abrupt drop
16
of the crack velocity, V<10−12ms−1. On the other hand, the toughness (KIC) was de-
termined by extrapolation of the V–KI curve to high crack velocities (10−2 m s−1). Their
values are represented in Table 3 for the different ceramics.
Fig. 7. Crack velocity diagrams under static loading, for biomedical grade alumina,
yttria stabilized zirconia, conventional zirconia toughened alumina 'micro'-composite
and currently developed nano-structured alumina–zirconia composite.
Table 3. Toughness (KIC), static fatigue threshold (KI0s) and cyclic fatigue threshold
(KI0c) of the currently developed alumina–zirconia nanocomposite (NK), alumina–zir-
conia micro-composite (ZTA), biomedical grade alumina (AL) and yttria-stabilized zir-
conia (3Y-TZP).
KIC (MPa√m)
KI0S (MPa√m)
KI0C (MPa√m)
Alumina–zirconia
nano-composite
(NK)
6.2 ± 0.2
5.0 ± 0.2
5.0 ± 0.2
Alumina–zirconia
micro-composite
(ZTA)
6.0 ± 0.2
4.0 ± 0.2
Not measured
Biomedical grade
alumina (AL)
4.2 ± 0.2
2.5 ± 0.2
2.5 ± 0.2
Biomedical grade
alumina
(3Y-TZP)
5.5 ± 0.2
3.2 ± 0.2
2.8 ± 0.2
Contrasting results are first underlined for alumina and zirconia monolithic ceramics.
Zirconia exhibits a higher toughness than alumina but their thresholds are close, mean-
ing that the necessary crack tip stress to initiate slow crack growth is roughly the same
in both materials. The high toughness of zirconia for a monolithic ceramic is attributed
to the stress induced phase transformation of metastable tetragonal grains towards the
monoclinic symmetry ahead of a propagating crack, leading to an increase of the work
of fracture (Evans and Heuer, 1980). This phenomenon is referred to as 'transformation
17
toughening'. Alumina has lower susceptibility to water and thus to stress assisted cor-
rosion. As a consequence, the V–KI curve of alumina presents a higher slope than the
curve corresponding to zirconia. Even if alumina is intrinsically more brittle than zir-
conia (lower toughness), it exhibits a threshold of the same order. From an atomistic
point of view, this means that the fracture energy of zirconia is lower in the presence
of water or body fluid, because the zirconia bonds are prone to chemisorption of the
polar water molecules (like silica glass for example). In practical terms, the benefit of
using zirconia instead of alumina is limited if we consider long-term behaviour.
The zirconia-toughened alumina 'micro'-composite possesses both a larger toughness
and threshold than the two monolithic ceramics. First, alumina rich composites present
crack propagation through the alumina matrix. Thus, these composites possess a lower
susceptibility to stress assisted corrosion by water or body fluid. Second, these materials
are reinforced by the presence of transformable zirconia particles, shifting the V–KI
diagram of alumina towards higher KI values. The authors have shown (De Aza et al.,
2002) in a previous work that the presence of small amounts of transformable zirconia
particles in a given matrix leads to a shift of the V–KI diagram towards higher KI
values, preserving the slope of the curve. Therefore, the large slope of the V–KI diagram
of alumina is preserved, but the diagram is shifted to large KI values due to transfor-
mation toughening, which means in turn a large toughness and threshold. It is worth
noting that 10 vol.% of transformable zirconia particles, with a size ranging between
100 and 600 nm, corresponds to the maximum amount of transformation toughening
(De Aza et al., 2003).
Including a smaller amount of zirconia particles, with a size lower than 100 nm totally
hinders the possibility of transformation toughening, since the particles become too
small to transform even at the crack tip. This was verified by X-ray Diffraction, which
revealed no transformation from the tetragonal to the monoclinic symmetry at the
surface of fractured nanostructured alumina–zirconia composites. However, both the
toughness and threshold of the alumina–zirconia composite are significantly larger than
that of the 'micro'-composite, and much larger than alumina. This means that only
1.7 vol.% of zirconia nano-particles in the alumina matrix dramatically improve its
crack resistance. This dramatic increase of SCG resistance can be attributed neither to
transformation toughening, nor crack bridging, since the R-Curve was proven to be flat
(Fig. 6). Moreover, the mode of failure was predominantly transgranular. On some
occasions, some crack bridging ligaments were observed on the crack path but their
number was clearly too low to account for a significant toughening effect. Including
transgranular nano-particles of a second phase with a different thermal expansion co-
efficient, however, induces large residual stresses in the composite, which may have a
strong impact on the SCG behaviour. In order to determine the presence of a residual
18
stress field in the alumina matrix, high angular precision diffraction patterns (mono-
cromatized incident beam Philips Xpert diffractometer) were recorded between 27° and
45° for pure sintered alumina and for the nano-composite. Small angular displacements
were found in the α-alumina peaks of nanocomposite corresponding to the following
planes: (104), (110), (006), (113). According to these data, a compressive strain of
3×10−4 and 2×10−4 was found for the a and c axes of the α-alumina matrix. These
strains correspond to a compressive average stress of 150 ± 50 MPa. These compressive
stresses superimpose on the stresses applied by the external stress field. In other words,
the stress intensity factor at the crack tip is lowered in the presence of the residual
compressive stresses. For a semi-elliptical flaw of dimension a subjected to a uniform
tensile stress, the actual stress intensity factor at the crack tip is given by:
(eq. 9)
𝐾 =(𝜎−𝜎) 𝜋𝑎
𝐾𝐼 𝑡𝑖𝑝𝐾𝐼 =(𝜎𝑎−𝜎𝑟𝑒𝑠)
𝜎𝑎
where σa is the applied stress, and σres the residual compressive stress. The ratio between
KI tip (stress intensity factor at the crack tip) and KI (the applied stress intensity factor)
is therefore given simply by:
(eq. 10)
The relative influence of the residual stress field is therefore higher for low applied
stress intensity factor (i.e. around KI0) than for high applied KI (i.e. at KIC), which is
in agreement with a higher slope of the apparent V–KI diagram. In other words, trans-
formation toughening in micro-composites leads to a shift of the V–KI curve, preserving
the slope of the alumina matrix, while residual stresses in nanostructured, intra-type
zirconia particles, composites lead to an increase of the V–KI slope.
The comparative sensitivity of ceramics to SCG can be plotted in a normalised V–
KI/KIC diagram, where KIC is the toughness. The higher the slope of the diagram,
i.e. the higher the KI0/KIC ratio, the lower the sensitivity to SCG by stress assisted
corrosion. Fig. 8 represents a schematic summary of results obtained in the different
materials of the study and compared to covalent ceramics (SiC and Si3N4). The results
illustrate the commonly accepted idea that the higher the covalent to ionic bonding
ratio, the lower the susceptibility to SCG. This is directly related to the atomic struc-
ture of the material. The nano-composite exhibits a peculiar behaviour, with a slope of
the V–KI/KIC diagram and a KI0/KIC ratio close to covalent ceramics (the Al2O3–nZrO2
lying between Si3N4 and SiC).
19
Fig. 8. V–KI/KIC laws of biomedical grade alumina, yttria stabilized zirconia, conven-
tional zirconia toughened alumina 'micro'-composite and currently developed nano-
structured alumina–zirconia composite. Schematic V–KI/KIC laws of covalent ceramics
(SiC and Si3N4) are given for comparison.
In order to evaluate the cyclic fatigue behaviour of the alumina–zirconia nano-compo-
site, crack velocities were also measured under cyclic loading. The tests were conducted
at a frequency of 1 Hz on the same testing machine as for static fatigue measurements,
which presents the advantage of allowing a direct crack velocity comparison with static
tests. The specimens were loaded at an imposed sine shape load between Pmin and Pmax,
for a given duration Δt. The R=KImin/KImax=Pmin/Pmax ratio was selected to be 0.1. The
crack velocity function under cyclic fatigue is compared to that obtained under static
fatigue in Fig. 9. The comparison of the thresholds for the different materials, under
cyclic and static fatigue, is given in Table 3. A slight increase of crack velocity and a
tendency to a lower threshold under cyclic loading is noticed. However, the cyclic fa-
tigue degradation is low, in particular in comparison to monolithic zirconia or alumina–
zirconia micro-composites, where transformation toughening acts to resist crack prop-
agation but is degraded under cyclic loading (Chevalier et al., 1999b,c). Pure alumina
is not affected by cyclic loading since the amount of crack bridging is negligible for that
grain size (Attaoui et al., 2005). Since residual stresses are elastic by nature, the only
source of cyclic degradation in the alumina–zirconia nanocomposite is the small amount
of crack bridging observed under static fatigue. However, the threshold below which no
crack propagation occurs, still stands well above that of the other ceramic materials,
providing a large crack resistance for long-term applications.
20
Fig. 9. Crack velocity function of the nano-structured alumina–zirconia composite un-
der cyclic fatigue, compared to that obtained under static fatigue.
3.4. Aging resistance
Fig. 10 represents the aging kinetics of the 3Y-TZP, alumina–zirconia micro-composite
and nano-composite, in terms of monoclinic fraction increase versus time. As expected,
the 3Y-TZP ceramic undergoes rapid surface transformation, since the monoclinic frac-
tion reaches saturation after less than 10 h in the autoclave (i.e. roughly 30 years in
vivo). On the contrary, the two alumina–zirconia composites do not exhibit any phase
transformation during aging, even for long (un-realistic) duration. Previous papers pub-
lished recently on the aging behaviour of alumina–zirconia composites have shown that
alumina–zirconia could be considered as safe against aging, provided that the zirconia
content in the composite is kept lower than 10% in the case of un-stabilized zirconia
and that no aggregates are present in the composite. The present results stand on this
line. This ensures perfect stability of the alumina–zirconia composite, which is a clear
advantage versus 3Y-TZP zirconia.
3.5. Fracture resistance of femoral heads
The load to failure of 7 prototypes processed from the alumina–zirconia nanocomposite
is given in Table 4. The results show that, even for the critical design chosen for the
load to failure test (28 mm heads, long neck, against CoCr taper), the prototypes satisfy
the ISO 7206-10 standard:
• The mean load to failure (49.2 kN) is higher than 46 kN,
• The lowest load to failure reported is higher than 20 kN.
21
Fig. 10. Aging kinetics (monoclinic fraction increase versus time at 134°C, 2 bars) of
biomedical grade zirconia (3Y-TZP), alumina–zirconia micro-composite and nano-com-
posite.
Table 4. Load to failure measured on 7 femoral heads prototypes processed from alu-
mina–zirconia nano-composites.
Femoral head n° Load to failure (kN)
1
2
3
4
5
6
7
50.96
34.50
54.06
44.96
58.82
45.75
55.56
49.23
Mean value
For the same design and the same testing configuration, the commercial alumina failed
to satisfy the ISO requirements. Indeed, the main load to failure (39 kN) was below
the required value.
4. Conclusions
Due to the modest failure resistance of alumina and the problem of yttria stabilized
zirconia in terms of long term reliability, there is a trend today to develop new alter-
natives, especially for critical and/or new designs for which alumina does not satisfy
mechanical requirements. The aim of the present paper was to present a global picture
of the mechanical performance and the durability of newly developed alumina–zirconia
22
nanocomposites. We have shown that such nanocomposites exhibit a very limited sur-
face damage after 7 million cycles in a hip simulator. They also exhibit a crack re-
sistance under static and cyclic fatigue well beyond that of all existing biomedical grade
ceramics, opening the possibility to develop critical designs that are not possible with
monolithic alumina. Associated to an expected full stability in vivo, the overall set of
results ensures a potential future development for these kinds of new nanocomposites
in the orthopedic field.
Disclosure statement
All authors disclose any actual or potential conflict of interest including any financial,
personal or other relationships with other people or organizations within three (3) years
of beginning the work submitted that could inappropriately influence (bias) their work.
Acknowledgement
The work was funded by the EU under contract n°G5RD-CT-2001-00483 (BIOKER).
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26
|
1904.10443 | 1 | 1904 | 2019-02-21T15:40:37 | A toxicology-informed, safer by design approach for the fabrication of transparent electrodes based on silver nanowires | [
"physics.app-ph",
"q-bio.TO"
] | Fabrication of silver nanowires (AgNWs) with fine and independent control of both the diameter (from 30 to 120 nm) and length (from 5 to 120 $\mu$m) by concomitant addition of co-nucleants and temperature control is demonstrated, and used for the preparation of size standards. Percolating random networks were fabricated using these standards and their optoelectronic properties were measured and compared with regard to the nanowire dimensions. The transparent electrodes appear suitable for various applications and exhibit excellent performances (e.g. 16 ohm sq --1 at 93% transparency), with haze values varying from 1.6 to 26.2%. Besides, in vitro toxicological studies carried out on murine macrophages with the same size standards revealed that AgNWs are weakly toxic (no toxicity observed below 50 $\mu$g mL --1 Ag), in particular compared to other silver nanoparticles. Short AgNWs (4 $\mu$m) appeared to be slightly more toxic than longer AgNWs (10 and 20 $\mu$m). Conversely, long AgNWs (20 $\mu$m) induced a more prolonged pro-inflammatory response in murine macrophages. These results contribute, in a safer by design approach, to promoting the use of short AgNWs. The global knowledge dealing with the combination of nanowire dimensions associated with optoelectronic performances and related toxicity should encourage the rational use of AgNWs, and guide the choice of the most adequate AgNW dimensions in an integrated approach. | physics.app-ph | physics | Environmental
Science
Nano
PAPER
Cite this: Environ. Sci.: Nano, 2019,
6, 684
A toxicology-informed, safer by design approach
for the fabrication of transparent electrodes based
on silver nanowires
Djadidi Toybou,ab Caroline Celle,a Catherine Aude-Garcia,c
Thierry Rabilloud
*c and Jean-Pierre Simonato
*a
Fabrication of silver nanowires (AgNWs) with fine and independent control of both the diameter (from 30
to 120 nm) and length (from 5 to 120 μm) by concomitant addition of co-nucleants and temperature con-
trol is demonstrated, and used for the preparation of size standards. Percolating random networks were
fabricated using these standards and their optoelectronic properties were measured and compared with
regard to the nanowire dimensions. The transparent electrodes appear suitable for various applications and
−1 at 93% transparency), with haze values varying from 1.6 to
exhibit excellent performances (e.g. 16 ohm sq
26.2%. Besides, in vitro toxicological studies carried out on murine macrophages with the same size stan-
−1 Ag), in particular com-
dards revealed that AgNWs are weakly toxic (no toxicity observed below 50 μg mL
pared to other silver nanoparticles. Short AgNWs (4 μm) appeared to be slightly more toxic than longer
AgNWs (10 and 20 μm). Conversely, long AgNWs (20 μm) induced a more prolonged pro-inflammatory re-
sponse in murine macrophages. These results contribute, in a safer by design approach, to promoting the
use of short AgNWs. The global knowledge dealing with the combination of nanowire dimensions associ-
ated with optoelectronic performances and related toxicity should encourage the rational use of AgNWs,
and guide the choice of the most adequate AgNW dimensions in an integrated approach.
Received 14th August 2018,
Accepted 10th October 2018
DOI: 10.1039/c8en00890f
rsc.li/es-nano
Environmental significance
The use of silver nanowires is a promising alternative for the fabrication of transparent electrodes. They will be increasingly introduced in consumer
devices. The relationship between the nanowires' dimensions and their toxicity is still insufficiently studied. We demonstrate a straightforward method to
prepare silver nanowires with controlled dimensions. We propose a global approach, starting from tailor-made nanowires, based on a study of both their
physical properties when used as random percolating networks, which is of interest from the technological point of view, and their toxicological behaviour
toward murine macrophages, which is of interest from the health, safety & environment point of view. These results contribute, in a "safer by design ap-
proach", to promoting the use of short AgNWs.
Introduction
The recent development of nanomaterials has generated a
wave of hope in many fields. The potential of nanomaterials
appears boundless, either due to their intrinsic properties
(e.g. quantum dots and fullerenes), their additional proper-
ties for bulk materials (e.g. nanocomposites), or when they
are used in the form of assemblies (e.g. carbon nanotube-
based cables). A characteristic and high-potential example of
nanomaterial assembly is the fabrication of random networks
a Univ. Grenoble Alpes, LITEN DTNM, CEA, F-38054 Grenoble, France.
E-mail: [email protected]
b Univ. Grenoble Alpes, ISTERRE, CNRS, F-38000, Grenoble, France
c Univ. Grenoble Alpes, Chemistry and Biology of Metals, CEA BIG, CNRS UMR
5249, F-38054 Grenoble, France. E-mail: [email protected]
in particular,
of metallic nanowires,
silver nanowires
(AgNWs).1 -- 3 Simply put, it is possible to generate random
networks of metallic nanowires, above the percolation thresh-
old, which conduct electricity through the nanowire-based
metallic lattice and concurrently let the light pass through
the empty spaces between the nanowires. This has been
widely studied during the last decade and has raised the ma-
turity of this technology up to the industrial level. Many ap-
plications using AgNWs have been investigated, including
touch screens,
film
heaters and others.4 -- 12 This system has many advantages
such as very low sheet resistance with high transparency, flex-
ibility, and low-cost processing under ambient conditions.
light-emitting devices,
transparent
Though many important advances have been realized in
this field, some key points remain to be tackled, in particular,
toxicity issues for safe industrial use. Since the expected
684 Environ. Sci.: Nano, 2019, 6, 684 -- 694
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properties are application-dependent and rely on the AgNWs'
morphology,13,14 it would be of great interest to be able to tai-
lor the shape of the nanowires in order to obtain optimal opto-
electronic performances for each use. Conventional parametric
studies15,16 as well as other more specific methods17,18 have
demonstrated efficient routes for modifying both the length
and diameter, but not independently. An ultrasonic method
was also proposed to select the desired length by cutting
AgNWs; however, this method leads to poor control over size
distribution and generates large amounts of by-products.19
The fabrication of AgNW size standards would also allow
toxicological studies to be performed on definite species, in
particular to determine whether the two main dimensions
(i.e. diameter and length) play a critical role in toxicity. This
is of tremendous importance since AgNWs will increasingly
be introduced in technological devices and consumer prod-
ucts, and thus data are awaited to assess the real toxicity of
these nanomaterials. Although several reports have begun to
tackle this topic,20 -- 26 much more remains to be done.
In this article, we propose a straightforward method to
modulate independently the diameter and the length of
nanowires in a wide range, allowing us to fabricate size stan-
dards, i.e. AgNW samples with definite lengths and diame-
ters. It has permitted us to perform a direct comparison of
the optoelectronic properties of transparent electrodes made
with these different nanowires, and to realize comparative ex-
periments on toxicity with macrophages.
Materials and methods
Synthesis and purification of AgNWs
In a typical synthesis, AgNO3 (0.68 g) was dissolved in EG (40
mL) at a slow stirring rate in a round flask. In another flask,
PVP (average mol. wt 40 000, 1.77 g), NaCl, and the co-
nucleant were dissolved in EG (80 mL) at 120 °C. The solu-
tion was cooled to room temperature and then slowly added
to the first flask within 8 min. The mixture was finally heated
at the reaction temperature and cooled down at ambient tem-
perature. The purification of the AgNWs was realized by de-
cantation according to a published procedure.27
Characterization of the mean dimensions of AgNWs
The morphology analysis of AgNWs was performed using a
Leo 1530 SEM. Measurement of the diameter and length di-
mensions was realized with the ImageJ software. The statisti-
cal studies were performed on 100 to 200 nanowires for each
sample.
Preparation of AgNW electrodes
The AgNW-based solutions were used for the fabrication of
−1 concen-
electrodes after dilution in methanol at 0.2 mg mL
tration. The silver concentration was measured using an
atomic absorption spectrometer (Perkin Elmer AAnalyst 400).
The deposition was performed on 2.5 × 2.5 cm2 heated sub-
strates (70 °C) with an automatic SonoTek spray-coater. The
performances of the electrodes were measured after cooling,
without any post-treatment.
Performance measurements
Total transmittance and haze values were measured with a
UV-visible spectrometer (Varian Cary 5000) equipped with an
integrating sphere. The sheet resistance was set as the mean
value of at least 5 measurements by using a four-pin probe
with a Loresta resistivity meter (EP MCP-T360).
Toxicological assays
Nanomaterials. As control nanomaterials, spherical silver
nanoparticles (<100 nm) coated with PVP40 were purchased
from Sigma-Aldrich (catalogue number 758329) as a 5 wt%
dispersion in ethylene glycol. Working solutions were pre-
pared by dilution in deionized water. The characterization of
these nanoparticles has been published previously by some
authors of this article.28 Additional controls consisted of
silica-based nanomaterials, either colloidal silica29 or crystal-
line silica (reference materials BCR66 and BCR70, purchased
from Sigma-Aldrich).
Cell lines. The mouse macrophage cell line RAW 264.7
was obtained from the European Cell Culture Collection
(Salisbury, UK). The cells were cultured in RPMI 1640 me-
dium + 10% fetal bovine serum. The cells were seeded at
200 000 cells per ml and harvested at 1 000 000 cells per ml.
For treatment with nanomaterials, the cells were seeded at
500 000 cells per ml. They were treated with nanomaterials
on the following day and harvested after a further 24 hours
in culture.
Neutral red uptake assay. This assay was performed
according to a published protocol.30 Cells grown in 12-well
plates and treated or not with nanomaterials were incubated
−1 neutral red (final concentration,
for 1 h with 40 μg mL
added from a 100× stock solution in 50% ethanol -- water). At
the end of the incubation period, the medium was discarded
and the cell layer was rinsed twice with PBS (5 min per rinse).
The PBS was removed, and 1 mL of elution solution (50%
ethanol and 1% acetic acid in water) was added per well. The
dye was eluted for 15 min under constant agitation, and the
dye concentration was read spectrophotometrically at 540
nm. The results were expressed as % of the control cells
(untreated).
Cytokine production and persistence experiments. The tu-
mour necrosis factor (TNF-α), interleukin 6 (IL-6) and mono-
cyte chemoattractant protein-1 (MCP-1) concentrations in the
culture supernatants of cells exposed for 24 h to AgNWs and
control nanomaterials were measured using the cytometric
bead array (CBA) mouse inflammation kit (BD Pharmingen,
France) according to the manufacturer's instructions. The
measurements were performed on a FACSCalibur
flow
cytometer and the data were analysed using CellQuest soft-
ware (Becton Dickinson). Bacterial lipopolysaccharide (LPS)
−1, 24 h). At the end
was used as a positive control (200 ng mL
of the exposure period, the medium was removed and saved
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for cytokine measurements. Fresh complete culture medium
(without nanomaterials) was added to the cells and left for 36
h. The medium was then removed and saved, and fresh com-
plete culture medium was added for a final 36 h period. Thus
for each nanomaterial, 3 cytokine assays were performed,
covering the 24 h exposure period and two post-exposure 36
h time windows.
Results and discussion
Controlled synthesis of AgNWs: key factors for independent
tuning of length and diameter
The synthesis of AgNWs has been extensively studied since
the first report of Xia et al.31 Among different routes to fabri-
cate these nanowires, the most studied process has been the
in situ reduction of silver salts by the reductive polyol
method. This solvothermal process usually includes the use
of ethylene glycol as the main solvent, silver nitrate as a
cheap silver source, a nucleant with or without co-nucleantIJs)
to initiate the growth of nanowires and PVP (poly-
vinylpyrrolidone) as the capping agent which allows orienta-
tion of the uniaxial growth.32 It has already been demon-
strated that AgNWs with different lengths and diameters can
be obtained "on demand" thanks to the conditions extracted
from parametric studies; however, it has not been demon-
strated so far that both the diameter and the length could be
tuned independently. In other words, modification of the
process to adjust one dimension has concomitantly a strong
effect on the other dimension (e.g. protocol adjustment to
modify the mean diameter will strongly impact the mean
length of the AgNWs).
It has been previously reported in the literature that the
use of a co-nucleant besides NaCl, the molar mass of PVP
and synthesis temperature may strongly affect NW morphol-
ogies.33 In particular, halide ions are known to modify the
nanowire diameter.34 -- 36 Bromide ions proved to be efficient
in reducing the diameter, but at the same time they also al-
tered the length of AgNWs.37 -- 39 To begin this study, the influ-
ence of F
as co-nucleants was investigated
and compared to a standard synthesis protocol.40,41
−
, Br
and I
−
−
, Cl
−
The impact of each halide ion on the morphology of as-
synthesized AgNWs is presented in Fig. 1. Compared to the
standard synthesis without a co-nucleant (Fig. 1a, pink cross,
63 ± 10 nm diameter/8 ± 3 μm length), each added halide ion
(molar ratio, 1 : 1 NaCl : KX) has a noticeable effect on the fi-
nal morphology of AgNWs. An exception is the case of iodide-
modulated synthesis which leads only to irregular nano-
particles. The results obtained with KBr or NaBr as a co-
nucleant appeared very close. To confirm this point, NaCl
and KCl were also used as nucleants (standard conditions,
−1), and as shown in Fig. 1(a), AgNWs with similar
0.7 mmol L
morphologies (51 ± 7 nm diameter and 6 ± 1 μm length) were
produced. This means that using KCl as a co-nucleant in an
equimolar ratio with NaCl gives the same result as doubling
the amount of NaCl; thus alkali counter-cations do not play a
significant role in the reaction mechanism. Nevertheless, it
must be noticed that both the diameter and length are af-
fected in the same way when the chloride quantity changes,
as already reported elsewhere.42 Fluoride ions (Fig. 1a -- blue
triangle) increased the length from 8 ± 3 μm to 12 ± 5 μm,
and the diameter to 71 ± 10 nm. Whereas the effects of fluo-
ride and iodide ions have not been reported extensively, di-
ameter shrinkage with the use of a bromide-based co-
nucleant is in fair agreement with the literature.37 -- 39,43
from 0 to 0.7 mmol L
To further investigate the effect of bromide as a co-
nucleant, we performed experiments with varying concentra-
−1. The results are
tions of KBr,
presented in Fig. 1b. It appears that the diameter decreases
from 63 ± 10 nm down to 20 ± 3 nm with increasing amount
of bromide ions, while the length increases from 6 ± 3 to 12
± 5 μm. Nanowires with 15 nm diameter can also be obtained
at higher concentrations of bromide, but the amount of me-
tallic by-products becomes excessive. As shown here, and in
agreement with literature reports, adjustment of the KBr
Fig. 1 Influence of several halide ions on the morphology of AgNWs. (a) Lengths of AgNWs synthesized by a standard protocol41 (pink dot, NaCl
as the only nucleant) and modified procedures with additional halide salts as co-nucleants (KBr, NaBr, KCl, NaCl, and KF). (b) Effect of KBr concen-
tration on diameters and lengths of AgNWs.
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quantity leads to a fine control of the diameters but changes
significantly the lengths.
Thus, in our goal to fabricate "on demand" AgNW size
standards with defined lengths and diameters, we carried out
−1 to
experiments by setting the KBr amount at 350 mmol L
control the diameter, and we introduced NaCl in various
amounts in order to modulate the length. The results plotted
in Fig. 2a show that when the chloride concentration was var-
−1, we obtained a collection
ied between 0.5 and 2.5 mmol L
of AgNWs with lengths ranging from 28 ± 9 down to 4 ± 2
μm. For higher concentrations of chloride, nanoparticles
were obtained as the sole product. These results demonstrate
that by adequate choice of the nature of co-nucleants and by
fine adjustment of
the variation of
length is actually possible while keeping the diameter almost
unchanged (Fig. 2b). This is a straightforward route to select
the desired length at constant diameter. The mean length
modification can be ascribed to the increased (or decreased)
number of seeds, which depends on the molar ratio between
their concentrations,
chlorine and silver. This is consistent with the report from
Buhro and colleague44 who demonstrated, in the early stage
of the polyol synthesis, the impact of chloride concentration
on the generation of nucleation sites.
Whereas diameters below 50 nm are desirable for most
optoelectronic applications requiring a low haze value, in
some specific uses like photovoltaics, larger diameters are
expected.5 In our effort to modulate length and diameter in-
dependently, we looked at a protocol to modify the diameter
while keeping the length mostly unchanged. It was previously
demonstrated by Unalan and colleagues that polyol synthesis
carried out at low temperatures generates thick wires (with
diameters higher than 300 nm) and that temperature plays a
crucial role in the nanowire formation.15 We used our stan-
dard protocol at various temperatures. The results are
presented in Fig. 2c and d. We observed that the mean diam-
eter decreased drastically, from 90 ± 10 nm down to 50 ±
8 nm, when the temperature was raised from 150 to 180 °C.
At the same time, the mean length of the AgNWs remained
Fig. 2 Tuning of the length of thin AgNWs by NaCl concentration and reaction temperature.
(a) Length as a function of the chloride
−1. Increasing the quantity of chloride decreases the mean length of AgNWs. (b)
concentration, with a constant KBr concentration of 350 mmol L
The diameter of AgNWs remains constant around 40 nm while the length decreases from 28 μm to 3 μm. The KBr concentration is set at 350
−1. (c) The length remains almost constant while the reaction temperature is modified. (d) Diameter tuning by reaction temperature
mmol L
modification, where increasing the temperature induces a diameter decrease.
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almost constant. This demonstrates that it is also possible to
change the diameter of AgNWs while keeping the length mostly
unchanged by selecting the adequate reaction temperature.
Fabrication of AgNW size standards. Thanks to the proto-
cols presented hereinbefore, we were able to prepare different
AgNW size standards, as shown in Fig. 3. Combinations of
any lengths or diameters in the range of 5 -- 120 μm and 30 --
120 nm, respectively, were achievable. This gives access to
calibrated samples of nanowires. Histograms showing the
distribution in diameters of three different samples of 10 μm
long AgNWs with various mean diameters are presented in
Fig. 3a, and histograms of three different populations with
different lengths of 40 nm diameter AgNWs are shown in
Fig. 3b. In each case, the overlap between two adjacent statis-
tical populations was calculated to be below 15%. SEM im-
ages are also presented to illustrate the major differences
obtained between the different samples in Fig. 3c; they show
undoubtedly how both diameters and lengths can be tuned
according to specific synthetic protocols. The main criteria to
tune the synthesis of the AgNW standards are schematized in
Fig. 3d. We also verified that the proposed conditions are
scalable. We performed experiments using up to 5 L semi-
batch reactors, which allowed us to confirm that the synthe-
sis of AgNWs with pre-determined dimensions can be carried
out "on demand".
Optoelectrical performances of transparent electrodes: im-
pact of AgNWs' dimensions on haziness. When assembled in
the form of random networks above the percolation thresh-
old, it is known that these materials can provide a relevant al-
ternative to TCOs (transparent conductive oxides) for the fab-
rication of transparent conductive materials. In this case, the
properties of interest (e.g. transparency and sheet resistance)
are measured at the macroscopic scale, but depend strongly
on the nanosized building blocks. We thus fabricated trans-
parent electrodes using various AgNW standards with aspect
ratios (i.e. length/diameter ratios) ranging from 55 to 1000.
For the sake of clarity, the different AgNW mean dimensions
are expressed as DaLb, with a and b indicating the mean di-
ameter in nm and the mean length in μm, respectively. The
transparency, conductivity and haze factor (i.e. the diffused
part of the transmitted light) of the electrodes were measured
and compared.
A typical plot of the transmittance as a function of the
sheet resistance is presented in Fig. 4a. This series of dots
was measured using D30L10 AgNWs. As expected, for these
dimensions and for highly purified nanowires, excellent
optoelectrical performances were obtained, with for instance
−1 sheet resistance. This
97% transparency for a 50 ohm sq
compares very well with the state-of-the-art
for metallic
nanowire-based technology, and also with ITO or any other
Fig. 3 Independent tuning of the diameter and length of silver nanowires. (a) Histograms of three different mean diameters for 10 μm long
AgNWs. (b) Histograms of three different mean lengths for 40 nm diameter AgNWs (c) SEM pictures of various lengths and diameters. Top, from
left to right: mean diameters of 30 nm, 60 nm, and >100 nm; bottom, from left to right: mean lengths of >100 μm, 10 μm, and 5 μm. (d)
Schematic diagram to control the morphology of AgNWs.
688 Environ. Sci.: Nano, 2019, 6, 684 -- 694
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Fig. 4 Optoelectrical properties of transparent electrodes fabricated with various AgNW size standards. (a) Total transmittance as a function of
the sheet resistance for D30L10 AgNWs. (b) Haze values for 30, 60 and 90 nm diameter AgNWs as a function of the total transmittance. The green
part represents measurements made on 5 μm long AgNWs, the white part for 10 μm length and the pink part for 20 μm length. The solid lines
correspond to linear regressions for each diameter. (c) Comparison of the haze level on given sheet resistances for standard AgNWs (D60L10), thin
and short (D40L10), thick and long (D90L20) and thin and long nanowires (D40L20). (d) Left, a 96% transparent electrode with a very low haze
value (1.6%); right, a 60% transparent electrode with high haziness (13.0%).
kind of transparent electrode. We chose to limit the field of
study to nanowires with at most 20 μm length because longer
AgNWs are much more difficult to synthesize, to handle, to
formulate and to deposit with high homogeneity on a large
substrate area using low-cost solution deposition techniques.
In Fig. 4b, the haze values are presented as a function of the
total transmittance for AgNWs with different diameters and
for different lengths (5, 10 and 20 μm long). This graph
shows a linear relationship between the haze value and the
total transmittance regardless of the length. The dimension
effect is very important since the haze values vary from 16%
down to less than 2%. Very low haziness, compatible with op-
toelectronic applications, is demonstrated for small diame-
ters, which is consistent with previous studies,45 -- 47 and very
interestingly, it is also shown that even with 90 nm diameter
AgNWs, it is possible to achieve low haze values for long
nanowires. The haze factor reported in the literature for sub-
15 nm diameter silver nanowires reached very low values be-
low 1% at 94.5% transmittance.48 However, reducing the di-
ameter of AgNWs below the mean free path of electrons (∼40
nm) is risky due to charge carrier scattering at the interface
and to material instability under operational stress. The his-
togram in Fig. 4c shows haze values at given sheet resistances
for AgNWs with various lengths and diameters. When the
densities of AgNWs are decreased (i.e. increasing sheet resis-
tances), the haze value is lowered drastically regardless of the
size standards. The impact of the length is obvious since 20
μm long nanowires are much less light diffusive than 10 μm
long nanospecies. For instance, in the case of 40 nm diame-
ter AgNWs, the haze value is more than doubled when the
length is reduced from 20 μm down to 10 μm. This is
expected by percolation theory. Indeed, for finite size scaling
in stick percolation dealing with large size systems, the criti-
cal number density (Nc) of sticks required for percolation is
given by Nc × L2 = 5.637 where L is the length of nanowires.49
This indicates that for a two-fold increase of the length of the
AgNWs, the required Nc to reach percolation is divided by
four.17,50 As shown by De et al. and by Lagrange et al., perco-
lation theory dominates the electrical behaviour of networks
associated with low density.51,52 However,
it should be
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emphasized that in our examples, the electrodes are fabri-
cated with densities far above Nc, but the length effect is still
clearly perceptible. The diameter effect is also visible for both
10 μm and 20 μm long AgNWs, and as expected, small diam-
eters lower the haziness. Pictures of two electrodes are in-
cluded in Fig. 4d to illustrate the pronounced optical differ-
ence (transparency and haziness) for different densities of
AgNWs.
Toxicity of AgNW size standards. Even if silver toxicology
is well known,53,54 the toxicity of silver-based nanomaterials
is difficult to predict because of their different shapes, which
can contribute to different biological responses regarding the
plurality of microorganisms. It is described in the literature
that low-aspect ratio nanosilver species such as nanoparticles
exhibit toxicity mainly relying on silver ion release, either ex-
tracellularly (for bacteria) or due to internalization and disso-
lution in the lysosomes for animal cells.28,55,56 For high as-
pect ratio silver nanomaterials, like AgNWs, the toxicity effect
may be driven by dissolution on the one hand; on the other
hand, the form factor may contribute largely, as AgNWs ex-
hibit a fibre shape having similarities with asbestos. Different
toxicity approaches are currently ongoing to decipher possi-
ble mechanisms in order to avoid toxicity caused by the as-
pect ratio, and some research studies are carried out to estab-
lish safety thresholds like for asbestos.57 -- 59
In this study, we investigated the basic responses of mu-
rine macrophages in the presence of AgNWs. We chose
macrophages because they are in charge of removing nano-
materials, and because they are also the main actors at play
in insoluble fibre toxicity. Thanks to the fabrication of AgNW
size standards described above,
toxicological experiments
were performed on macrophages to discriminate the effects
of the diameter and length.
Previous studies dealing with the potential toxic effect of
AgNWs on lung and macrophage models revealed a length-
dependent toxicity for both in vitro and in vivo studies, with
short nanowires causing less inflammatory responses.20,57,60 -- 62
These different studies compared various lengths; however, a
possible diameter effect was not directly tackled by compara-
tive experiments, or both diameters and lengths were changed
at the same time.
Prior to toxicity experiments on macrophages, we evalu-
ated the contribution of dissolved species. The dissolution of
relevant morphologies of nanowires was monitored over a pe-
riod of 24 h in medium only under working conditions. The
AgNWs were compared to silver nanoparticles coated with
PVP with a mean diameter close to standard AgNWs (≈60
nm) and citrate-coated silver nanoparticles which are known
to dissolve quickly. The results are shown in Fig. 5a.
Regardless of their dimensions, AgNWs exhibit similar
dissolution rates. Silver nanoparticles coated with PVP
dissolved slightly faster than the nanowires. For all
the
AgNWs, the solubilized part of silver was found to be low
(<10%), even after 24 h. The corresponding Ag+ concentra-
tion was lower than the known silver ion cytotoxicity (1 μg
−1); hence subsequent toxicity measurements on macro-
mL
phages were considered relevant to evaluate the potential in-
trinsic toxicity of AgNWs.
AgNWs show low and length-dependent toxicity for macro-
phages. Cytotoxicity assays were performed on RAW264.7 mu-
rine cells, and the neutral red uptake assay was used to deter-
mine the potential adverse effects for each morphology of
AgNWs. Various morphologies were chosen to check indepen-
dently the potential diameter or length effects. For instance,
we used AgNWs with the diameter dimension set at 40 nm
with various lengths (4, 10 and 20 μm), and 10 μm long
Fig. 5 Dissolution rate of the studied nanomaterials and cell viability of RAW264.7 murine cells treated with the nanomaterials. (a) Dissolution
−1 concentration except for less concentrated citrate-
monitored for 24 h at 37 °C in RPMI medium containing only the nanomaterials at 2.5 μg mL
−1). PVP-coated nanoparticles (NP-PVP, red triangle) dissolve faster than nanowires (AgNWs, black dot). The total
coated nanoparticles (0.4 μg mL
dissolution of all the nanomaterials is less than 10% in the medium. (b) The cells were incubated for 24 h with different concentrations of the nano-
materials (from 20 to 100 ppm). The shortest nanowires (D40L4) exhibit a higher toxicity, AgNWs with 10 μm length (D40L10, D60L10, and
D90L10) exhibit a similar toxicity regardless of the diameter dimension, and long nanowires with 20 μm length (D40L20) and PVP-coated nano-
particles (NP-PVP) show a very low toxicity. The LC50 of the short nanowires, which exhibit the highest toxicity, is higher than 80 ppm.
690 Environ. Sci.: Nano, 2019, 6, 684 -- 694
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AgNWs with various diameters (40, 60 and 90 nm). No de-
crease of cellular activity up to high doses (50 ppm nano-
materials) was observed, as evidenced in Fig. 5b. The shortest
AgNWs (length of 4 μm) presented the lowest IC50 at 100
ppm concentration, followed by the three other nanowires
with 10 μm length. Longer AgNWs (20 μm length) did not
present a cellular activity decrease under our experimental
conditions. This length effect can be related to the uptake
ability of macrophages. Phagocytosis of short nanowires (4
μm) can be easily completed, leading to silver ion release in-
side the cells, as with the well-described silver nanoparticle
toxicity. The 10 μm long nanowires, with different diameters,
show a similar inhibition behaviour. The quasi non-toxicity
of long AgNWs (20 μm length) can probably be ascribed to
the fact that the nanowires were not internalized, as the
threshold length of phagocytosis was exceeded. These results
suggest
that AgNWs induce cytotoxicity in a length-type-
dependent manner, which is consistent with a reported study
on RAW264.7 treated with carbon nanotubes of different
lengths.63 These results are in accordance with the literature,
with cytotoxicity being correlated with the degree of cell up-
take and the amount of ionic silver due to intracellular
dissolution.62,64
induce
a
Long AgNWs
slight but persistent pro-
inflammatory profile. Macrophages are known for their ca-
pacity of phagocytizing particulate substances, such as patho-
genic agents but also particulate chemicals (e.g. oxidized lipo-
protein particles in the case of atherosclerotic foam cells).
They also play a strong role in immune reaction modulation
through their ability to release various signalling molecules
such as pro- or anti-inflammatory cytokines, depending on
the nature of the phagocytized particles. They also trigger
these mechanisms upon frustrated phagocytosis (e.g. in the
asbestos case), which makes them an attractive choice to
study possible pro-inflammatory responses. To evaluate this
response, we measured two major inflammatory cytokines:
interleukin 6 (IL-6) and tumour necrosis factor alpha (TNF-α)
at the highest non-toxic concentration (50 ppm). The inflam-
matory responses due to the nanowires were compared, on
the one hand, to that of amorphous and crystalline silica par-
ticles (LS30, BCR66, and BCR70) known to induce a low but
well-documented inflammatory response65 -- 68 and on the
other hand, to bacterial lipopolysaccharide (LPS) as a positive
control known to induce very strong pro-inflammatory
responses.
Fig. 6a shows the relative amount of secreted TNF-α by
macrophages in response to the different nanowires. After 24
h, we can notice a similar production rate for all the mor-
phologies of AgNWs. However, D40L20 is the only AgNW that
induces a slightly higher TNF-α production than silica. For
IL-6 (Fig. 6b), the production induced by AgNWs was very low
and always lower than those induced by silica. Overall, the
bar charts for IL-6 and TNF-α show a globally low secretion
for each cytokine after a 24 h exposure to nanomaterials,
representing less than 1% of the LPS-induced production.
These results show that the AgNWs induce a weak increase
Fig. 6 Pro-inflammatory cytokine secretion after treatment with nanomaterials (R0) and persistence results at 36 h (R36) and 72 h (R72). The
secretion level was compared to LPS as a positive control and silica-based nanomaterials (LS30, BCR66, and BCR70) as the nanomaterial control.
(a) TNF-α secretion is very low (the same level as the control) for all AgNWs, and lower than the silica control (BCR66), except for D40L20. (b) The
IL-6 secretion of cells treated with AgNWs is similar regardless of the length or diameter, and at the same level as the negative control. For both
IL-6 secretion and TNF-α secretion, the comparative secretion with LPS is very low (<1%).
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in cytokine release, which correlated positively with the
length of the wires, as expected for fibre-like materials.
is
One of the major mechanisms at play in persistent fibre/
particle toxicity
the presence of a prolonged pro-
inflammatory response over time. In order to test this possi-
bility by our in vitro system, we studied the evolution of the
production of TNF-α and IL-6 over time after a 24 h exposure
to nanomaterials (Fig. 6). LPS-induced TNF-α release was
both acute and very transient. Compared to the control, none
of the short nanowires, the amorphous silica or the silver
nanoparticles induced any significantly higher TNF-α release.
Only the small crystalline silica (BCR66) and the long nano-
wires (20 μm) induced a weak but sustained TNF-α release.
Although the shape of the curves is different for IL-6, with a
prolonged LPS-induced release, the same trend can be ob-
served, with only the small crystalline silica (BCR66) and the
long nanowires inducing a prolonged IL-6 release compared
to the control. These results suggest that the long nanowires
have an inflammatory effect that is sustained over time. To
the best of our knowledge, this is the first reported study on
the persistence of the inflammatory response in vitro.
Our results are in line with those obtained using in vivo
models20,26,60 and suggest that simple in vitro models can be
predictive of the inflammatory potential of nanomaterials. In
addition, these in vitro systems are much cheaper and ethi-
cally more acceptable than in vivo experiments.
Taken collectively, all these data allow us to propose a
"safer by design" approach for the use of AgNWs, depending
on the applications. Different performances for both electri-
cal and optical aspects (including haziness) can be achieved,
depending on the density and on the dimensions of AgNWs.
According to the toxicological results, a rational approach
would be to foster the use of nanowires up to 10 μm length
since they can combine high optoelectrical performances and
minimal biological effects.
Conclusions
By careful modifications of the polyol process, in particular,
precisely defined halide ion concentrations and temperature
setting, independent fine tuning of the diameter and length
of AgNWs has been successfully demonstrated. Size standards
were prepared accordingly, and used for the fabrication of
transparent electrodes. Excellent optoelectrical performances
were obtained and the haze value was varied from 1.6 to
26.2%. In the meantime, we performed in vitro toxicological
assays on murine macrophages. The AgNWs were found to be
weakly toxic for macrophages and showed a length-dependent
toxicity, with the toxicity decreasing with length. Conversely,
the cytokine release assays showed a weak but significant pro-
inflammatory potential for long nanowires (20 μm), and the
observed persistence of the response, although at weak levels,
calls for attention when devising the rules for the use of
AgNWs in consumer products and in the recycling of such
products. This study set out to take a holistic view of AgNWs,
with a clear relationship between AgNW dimensions and both
their optoelectronic performances, when used in the form of
random percolating networks, and their toxicity and pro-
inflammatory potential. Since AgNWs will certainly be in-
creasingly introduced in commercial devices in the short
term, it seems important to have a global vision of these
nanomaterials, which will ineluctably encourage the rational
use of AgNWs in a "safer by design" approach.
Conflicts of interest
There are no conflicts of interest to declare.
Acknowledgements
This work was supported by the Labex Serenade (no. ANR-11-
LABX-0064) funded by the "Investissements d'Avenir" French
Government program of the French National Research Agency
(ANR) through the AMIDEX project (no. ANR-11-IDEX-0001-
02). In particular, the authors thank Pr L. Charlet for coordi-
nating the "nanosilver topic", and they are grateful for the
funding of D. Toybou's PhD grant.
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1903.06918 | 2 | 1903 | 2019-04-07T15:17:13 | Master equation for operational amplifiers: stability of negative differential converters, crossover frequency and pass-bandwidth | [
"physics.app-ph"
] | The time dependent master equation from the seminal article by Ragazzini, Randall and Russell [J. R. Ragazzini, R. H. Randall and F. A. Russell, "Analysis of Problems in Dynamics by Electronic Circuits", Proc. of the I.R.E., Vol. 35, pp. 444--452, (1947)] is recovered as necessary tool for the analysis of contemporary circuits with operational amplifiers. This equation gives the relation between time dependent the output voltage $U_0(t)$ and the difference between the input voltages ($U_{+}(t)$ and $U_{-}(t)$). The crossover frequency $f_0$ is represented the time constant $\tau_{_0}$ of this equation. The work of the master equation is illustrated by two typical examples: a) the stability criterion of the devices with negative impedance converters, which we consider as a new result b) the frequency dependence of the amplifiers with operational amplifiers given in the technical specifications without citations of time dependent equation. A simple circuit for determination of $f_0$ is suggested and the method is illustrated by determination of crossover frequency for the low-noise and high speed ADA4898 operational amplifier. It is concluded that for an exact calculation of the pass bandwidth of amplifiers with active filters the 70 years old master equation is a useful technique implicitly included in the contemporary software. The frequency dependent formulae for the amplification coefficient of inverting and non-inverting amplifiers are given for the case of non-zero conductivity between the inputs of the operational amplifiers. | physics.app-ph | physics | Master equation for operational amplifiers: stability of negative differential
converters, crossover frequency and pass-bandwidth
T. M. Mishonov, V. I. Danchev, E. G. Petkov∗
Faculty of Physics, St. Clement of Ohrid University at Sofia,
5 James Bourchier Blvd., BG-1164 Sofia, Bulgaria
V. N. Gourev
Department of Atomic Physics, Faculty of Physics,
St. Clement of Ohrid University at Sofia,
5 James Bourchier Blvd., BG-1164 Sofia, Bulgaria
I. M. Dimitrova
Faculty of Chemical Technologies,
University of Chemical Technology and Metallurgy,
8 Kliment Ohridski Blvd., BG-1756 Sofia
N. S. Serafimov
Faculty of Telecommunications, Technical University Sofia,
8 Kliment Ohridski Blvd., BG-1000 Sofia, Bulgaria
Faculty of Mathematics, St. Clement of Ohrid University at Sofia,
5 James Bourchier Blvd., BG-1164 Sofia, Bulgaria
A. A. Stefanov
A. M. Varonov†
Department of Theoretical Physics, Faculty of Physics,
St. Clement of Ohrid University at Sofia,
5 James Bourchier Blvd., BG-1164 Sofia, Bulgaria
(Dated: 07 April 2019)
The time dependent master equation from the seminal article by Ragazzini, Randall and Russell
[J. R. Ragazzini, R. H. Randall and F. A. Russell, "Analysis of Problems in Dynamics by Electronic
Circuits", Proc. of the I.R.E., 35, pp. 444 -- 452, (1947)] is recovered as necessary tool for the analysis
of contemporary circuits with operational amplifiers. This equation gives the relation between
time dependent the output voltage U0(t) and the difference between the input voltages (U+(t) and
U−(t)). The crossover frequency f0 is represented the time constant τ0 of this equation. The
work of the master equation is illustrated by two typical examples: a) the stability criterion of
the devices with negative impedance converters, which we consider as a new result b) the frequency
dependence of the amplifiers with operational amplifiers given in the technical specifications without
citations of time dependent equation. A simple circuit for determination of f0 is suggested and the
method is illustrated by determination of crossover frequency for the low-noise and high speed
ADA4898 operational amplifier. It is concluded that for an exact calculation of the pass bandwidth
of amplifiers with active filters the 70 years old master equation is a useful technique implicitly
included in the contemporary software. The frequency dependent formulae for the amplification
coefficient of inverting and non-inverting amplifiers are given for the case of non-zero conductivity
between the inputs of the operational amplifiers.
Inspired by Heaviside operational calculus 70 years ago, Ragazzini, Randall and Russell [1] introduced the idea and
coined the generic term operational amplifier [2] (enabling summation, integration and differentiation), and introduced
I.
INTRODUCTION
∗ E-mail: [email protected]
† E-mail: [email protected]
9
1
0
2
r
p
A
7
]
h
p
-
p
p
a
.
s
c
i
s
y
h
p
[
2
v
8
1
9
6
0
.
3
0
9
1
:
v
i
X
r
a
the master equation
U+ − U− = G−1U0,
G−1 =
1
G0
+ τ0 s,
2
(1)
which describes the relation between input voltages U+(t) and U−(t) and output voltage U0(t) Here s is the time
differentiating operator
(2)
which for exponential time dependence of the voltages U ∝ est is reduced to its eigenvalue sest = sest, and for the
reciprocal open loop-gain we have
s =
,
d
dt
(3)
where j2 = −1 and ω is the frequency. As static open-loop gain G0 (cid:29) 1 for all high frequency applications, the G−1
term is negligible. The time constant of the operational amplifier is represented by the crossover frequency f0
0 + sτ0,
s = jω,
0
G−1(ω) = G−1
τ0 =
1
2πf0
,
(4)
called also -3dB frequency of the open-loop gain. Implicitly the equation from the work of Ragazzini, Randall and
Russell [1] exists in Fourier representation in the modeling of operational amplifiers since 1970 [3 -- 8] but never as a
differential equation describing time dependent voltages
U+(t) − U−(t) =
(cid:18) 1
(cid:19)
U0(t)
+ τ
(5)
d
dt
G0
which is necessary for the transient analysis given by the commercial software. The Fourier representation of this
time dependent equation Eq. (3) can be fund however in many sources. Here we wish to emphasize that fundamental
equations of physics and engineering are given in time representation; let us recall Maxwell. Schoedinger and Newton
equations.
Nevertheless, the master equation of the operational amplifier is in some sense new an it is almost impossible to
find a description how the procedure for determination of f0 can be derived and how it is possible to calculate the
frequency dependence of the amplification of non-inverting amplifier, for example, given in the the many technical
applications, see for example the specification for operational amplifier ADA4817 [9]. The name of the equation itself
is not even finalized cf. [10] and in many applications the frequency dependence is neglected leaving no trace of any
time or frequency relation. Another important example is the stability problem of circuits with operational amplifiers.
Instead of review, here we will present only two typical examples illustrating the applicability of the master equation
Eq. (1) to the negative impedance converter (NIC) and 2) the determination of crossover frequency f0 by frequency
dependence of the amplification of a non-inverting amplifier analyzed in the next two sections.
II. NEGATIVE IMPEDANCE CONVERTER WITH OPERATIONAL AMPLIFIER
Negative impedance convertors (NIC) are an important idea in electronics [11 -- 13] and they can be easily constructed
by operational amplifiers.
A circuit for NIC is depicted in Fig. 1; the figure is taken from Ref. [14]. Solving the corresponding Ohm equations
U − U− = G−1U0,
I =
U − U0
R3
=
U0
R1 + R2
=
U−
R1
,
together with Eq. (3) after some high-school algebra we obtain the impedance of the circuit
(6)
(7)
Z ≡ U
I
=
1 −
R1
+ G−1
0 + τ0 s
R3
1
.
divider; 2) then we substitute so expressed U− in the first equation and obtain U0 = U/(cid:2)R1/ (R1 + R2) + G−1(cid:3);
Let us recall the derivation: 1) from the last equation we express U− = U0R1/(R1 + R2); this is actually a voltage
R1+R2
3
FIG. 1. Negative impedance converter built by operational amplifier according NASA patent [15]. For static voltages and
negligible reciprocal open-loop gain G
0 (cid:28) 1 the circuit gives for the ratio of input voltage and current U/I = −R1R3/R2.
−1
3) finally we substitute U0 in the first formula for the current I and arrive at Eq. (7). In the static case s = 0 and
negligible G−1
0 (cid:28) 1 this equation gives
This result can be checked by current-voltage characteristics of the NIC.
If an external load resistor Re is connected in parallel to the NIC the total conductivity is zero
Z(ω = 0) ≈ −R, R ≡ R1R3
R2
.
1
Z
+
1
Re
= 0
and this eigenvalue problem has an explicit solution
τ0 s + G−1
0 =
−
1
1 + R3
Re
1
1 + R2
R1
,
for the real in this case exponent s. For negligible G−1
0 (cid:28) 1 s is positive if R3/Re < R2/R1 or
Re > R ≡ R1R3/R2.
(8)
(9)
(10)
(11)
Positive and real value of s means exponential increase est of the voltage up to appearance of nonlinear effects, for
example lightning of a light emitting diode (LED). A voltmeter will show significant voltage and such an impedance
cannot be measured by a digital Ohmeter. Such circuit, however, can be used for generation of voltage oscillations in
parallel resonance circuit with big resistance in the resonance shown in Fig. 2. For high quality factor Q =(cid:112)L/C/R (cid:29)
1 resonance contours the effective resistance Reff = Q2R > R and in the circuit down in Fig. 2 electric oscillations are
excited. When an instability parameter (Reff − R)/R (cid:28) 1 is relatively small, the amplitude of the voltage oscillations
is slightly above the forward voltage Uc (the critical voltage to light the LED) of the LED and one can evaluate the
consumed by the diode power as P = U 2
c /2R.
However, if we change the polarity of the operational amplifier as it is illustrated in Fig. 3, it leads formally to
change of the sign in the stability equation Eq. (10). For such circuits NIC creates electric oscillations in sequential
resonance circuits with small resistance of the coil R (cid:28) (cid:112)L/C. For high resistance loads, however, the inverted
circuit from Fig. 3 is stable. If we connect a voltmeter it will show zero voltage and some digital Ohmmeters can
show negative resistance −R as it is demonstrated in Fig. 4
Analyzing the work of NIC, we suppose that the exponent s is real. We consider that similar stability analysis [16]
for frequency dependent negative resistors (FDNR) [17 -- 19] can be useful for many applications.
In the next section we will consider the work of the master equation of operational amplifiers applied for the purely
imaginary s = jω.
4
FIG. 2. Can a NIC excite electric oscillations in a parallel resonance circuit? Light emitting diode (LED) D radiates a pulsating
light and limits the amplitude of the electric oscillations.
FIG. 3. Excitations of electric oscillations by NIC in a sequential resonance circuit. Why is the polarity of the operational am-
plifier opposite with the polarity of the parallel resonance circuit? Can polarities be calculated using the theoretical description
of the work of operational amplifiers? Search through the Internet.
III. FREQUENCY DEPENDENT AMPLIFICATION FOR A NON-INVERTING AMPLIFIER
For the non-inverting amplifier, depicted in Fig. 5, the input voltage Ui is applied directly to the (+) input of the
operational amplifier U+ = Ui. The master equation of operational amplifiers Eq. (1) U+ − U− = G−1(ω)U0 gives an
expression for the current through the finite input impedance za
Tracing the voltage drop from U+ through za and r ≡ zg to ground gives an expression for
Ia = − U+ − U−
za
= − G−1U0
za
.
(12)
(13)
(14)
where we have used the last expression for Ia. Using the last two equations, the current
In = − U+
zg
− Iaza = − U+
zg
+
G−1U0
,
zg
If = In − Ia = − U+
zg
+ G−1U0
+
1
za
(cid:18) 1
zg
(cid:19)
.
5
FIG. 4. Whether a digital Ohmmeter with big internal resistance Re can show negative Ohms −R, where the parameter
R ≡ R1R3/R2.
FIG. 5. Non-inverting amplifier with a finite input resistance Ra (non-zero input conductivity) of the operational amplifier.
Finally, tracing the voltage drop between U0 through Zf and r to ground, we obtain
U0 = −Inzg − If Zf .
(15)
Substituting here Eq. (13) for In and Eq. (14) for If , rearranging the terms and making convenient substitutions, we
arrive at the frequency dependent amplification
ΥNIA(ω)≡ U0
U+
Zf (ω)
zg(ω)
Y −1(ω) + G−1(ω)[1 + a(ω)]
+ jωCf ,
Y (ω) =
=
1
Rf
=
+ 1,
(16)
1
,
zg = r,
σa ≡ 1
za
1
Zf
≡ 1
Ra
a(ω) = Y −1rσa,
+ jωCa.
(17)
If the influence of the small feedback capacitor Cf parallelly connected to the feedback resistor is negligible, i.e.for
0 (cid:28) 1, we obtain the well-known formulae Eq. (4) and Eq. (5) of Ref. [9], see also Refs. [20 -- 23]
ω Rf Cf (cid:28) 1 and G−1
2πfcrossover(Rf + r)
(Rf + r)s + 2πfcrossover r
,
ΥNIA(ω) =
ΥNIA(0) = Y0 ≡ Rf
r
+ 1, for f =
(cid:28) fcrossover,
ω
2π
where the notation is once again not unique
fcrossover ≡ f0 ≡ f−3 dB open loop,
(18)
(19)
6
and here we follow the notations from the technical specifications of operational amplifiers, for example ADA4817 [9].
The Eq. (4) of Ref. [9] coincides with Eq. (16) of the present paper and this agreement can be considered as implicit
proof of Eq. (3) and the time dependent master equation Eq. (5). For measurement of fcrossover we have to perform
linear regression for ΥNIA−2 (ω2) using the experimentally determined ratio of input to output voltages
Ui2
U02 =
1
(1 + Rf /r)2 +
f 2
f 2
crossover
,
f =
ω
2π
.
(20)
Here the first term is negligible if the reciprocal amplification coefficient 1/(1 + Rf /r) is smaller than accuracy of
measurement, say 1%. The slope of the Ui2 /U02 versus f 2 plane determines the crossover frequency and this
method is invariant with respect of the used resistors.
The calculation of the pass-bandwidth requires the square of the modulus of the complex amplification, which after
a straight forward calculation from Eq. (16)
ΥNIA(ω)2
=
where
(cid:2)G−1
0 N + (Y −1
0 + ω2τ 2
+ (ωτs)2
N 2(ω)
s )(cid:3)2
(cid:21)2 ,
N + I0
(cid:20) τ
τs
N (ω) = 1 + ω2τ 2
s ,
I0 ≡ 1 − Y −1
0
,
τs ≡ Cf Rf
Y0
.
(21)
(22)
The derivation of the frequency dependent amplification for the rest of the most widely used amplification circuits
(differential B 1 and inverting amplifier B 2) is analogous and can be found in the appendix.
IV. DETERMINATION OF THE CROSSOVER FREQUENCY f0 OF THE OPERATIONAL
AMPLIFIERS
Let us refer to the formula for frequency dependent amplification ΥNIA(ω) Eq. (18), the ratio of the output U0
and input voltages UI of a non-inverting amplifier with gain resistance r and big feedback resistor R taken from the
specification of ADA4817 [9] and the well known monograph [20]
(cid:17)
1
(cid:16) r
R+r
where
ΥNIA(ω) =
U0
UI
=
1
Y −1
0 + G−1(ω)
=
Y0 =
R
r
+ 1
,
+ sτ0
(23)
(24)
is the static (low frequency) amplification and in order to alleviate the notations, the index for feedback f is omitted,
i.e. Rf ≡ R. Actually only the comparison of the two different expressions for ΥNIA(ω) allows to recover the original
master equation Eq. (1)
When s = jω is purely imaginary for the modulus of the amplification we have Y (ω) ≡ (cid:113)ΥNIA(ω)2 and from
Eq. (1) we obtain
1
Y 2(f )
=
UI2
U02 =
1
Y 2
0
+
f 2
f 2
0
,
f =
ω
2π
.
Let us define f−3dB as frequency at which the power of amplification decreases two times
From Eq. (25) we easily obtain [9]
Y 2(f−3dB) =
1
2
Y 2
0 .
f0 = Y0f−3dB,
(25)
(26)
(27)
7
FIG. 6. A simple circuit for determination of the crossover frequency of an operational amplifier. The voltage divider creates
a DC (or low frequency) voltage Er/(R + r), which is later restored by a non-inverting amplifier with DC amplification
Y0 = (R + r)/r. We change the frequency, so that at some frequency f−3dB the amplification becomes two times smaller than
the DC one Y (f−3dB)2 = Y 2
0 /2 and determine crossover frequency as f0 = Y0f−3dB.
where we have obviously considered -3 dB closed-loop gain in this expression. A simple circuit for determination
of f0 using this formula is represented in Fig. 6. The voltage from the AC voltage source E is divided by a volt-
age divider Y0 times and later on at small frequencies is completely recovered by the static amplification Y0. In
this way using a dozen ADA4898-2 we obtained for the crossover frequency f0 = (46.6 ± 1.3) MHz for 1 Vp−p
and f0 = (59.9 ± 6%) for 100 mVp−p which is in acceptable agreement with the values pointed out in the specifi-
cation [24]. The uncertainty is related with the used oscilloscope Hitachi V-252, more precise measurements with
Anfatec USB Lockin 250 kHz amplifier[25] revealed that perhaps the parameter f0 is temperature dependent and this
requires additional research.
V. DISCUSSION AND CONCLUSIONS
According to the best we know, results for stability of circuits of negative impedance converters Eq. (10) and Eq. (11)
are new results. We analyze what the criterion for agitation of oscillations in parallel and sequential resonance circuits
is. Our research complete the well-known patent [15].
Using the master equation of operational amplifiers, we re-derive the frequency dependent formulae for amplification
of inverting and non-inverting amplifiers given in the technical specifications [9] without any reference to contemporary
books or papers.
We give a prescription for determination of the crossover frequency Eq. (27) and we consider this not redundant
since operational amplifiers vendors provide this parameter in their specifications, often with 50% difference. The
exact knowledge of the crossover frequency f0 is necessary when we need to precisely determine the non-ideal effects
of operational amplifiers. Even historically[1] in order to create electrical analogs of dynamic systems and to fit the
differential equations which govern their dynamics, it had been necessary to know the master equation which describes
the work of the differential amplifier.
For instance, in cases when there is a need of an exact calculation of the pass bandwidth of amplifiers with active
filters, the master equation Eq. (1) is an adequate approach. We analyzed two typical examples of the application
of this equation (B 2 with finite internal impedance) and close the discussion of the formula for frequency dependent
amplification coefficient from the seminal work Eq. (3) of Ref. [1] where a circuit with the topology of inverting
amplifiers (IA) has been used, switched with opposite polarity of the operational amplifier
ΥIA(s) = −{zi(s)/Zf (s) + [1 + zi(s)/Zf (s)] G(s)}−1 ,
(28)
where zi is the gain (input zi ≡ zg) impedance and Zf is the feedback impedance switched to the operational amplifier
with gain given by the master equation G−1 ≈ sτ0 and with infinite internal impedance. Compare this formula with
the formula for NI amplification Eq. (7) of Ref. [9]. As a rule classical papers are never cited in specifications and
contemporary books in electronics. But sometimes the use of classical achievements are very useful.
Let summarize the results derived in the present paper: 1) we introduce time dependent master equation for
operational amplifiers Eq. (5), 2) we derive a simple method for determination of crossover frequency of operational
amplifiers as a linear regression of the experimental data processing Eq. (25), 3) or the simpler version Eq. (27). 4)
8
We apply our method for measurement of the cross-over frequency for a contemporary low-noise operational amplifier
ADA4898-2 and reliably observe small difference from the data given in the specification of the manufacturer [24]. We
suggest a working method for determination of the cross-over frequency f0 and systematize the corrected formulas for
the main type amplifiers, see Appendix A. 5) Applying time dependent equation Eq. (5), we derive stability criterion
for oscillators with NIC, and obtain when NIC can excite oscillations in parallel and sequential resonance circuits. 6)
As the master equation of operational amplifiers is a low frequency approximation we expect that it is good working
for significant amplifications, say for gain > 5.
Even if similar calculations are frequently found in the main textbooks about operational amplifiers, the proposed
examples (NIC and non-inverting amplifier, as well as the examples in the appendix) can be useful for circuit designers
and students approaching the design and the analysis of circuits based on modern operational amplifiers.
The author appreciate the cooperation with Vassil Yordanov in early stages [14, 26] of the present research, for the
friendship and stimulating comments.
ACKNOWLEDGMENT
[1] J. R. Ragazzini, R. H. Randall and F. A. Russell, "Analysis of Problems in Dynamics by Electronic Circuits", Proc. of the
I.R.E., 35, no. 5, pp. 444 -- 452, Eqs. (3,6,7,32), May 1947, https://doi.org/10.1109/JRPROC.1947.232616.
[2] "Op Amp History" in W. G. Jung, Op Amp Applications Handbook, Newnes/Elsevier, 2005, ISBN-0-7506-7844-5; Op Amp
Applications, Analog Devices, 2002, ISBN-0-916550-26-5.
[3] R. L. Geiger and A. Budak, IEEE Trans. Circ. and Sys., cas-28, No. 8, (1981);
A. Budak, Passive and active network analysis and synthesis, (Houghton Mifflin, 1974).
[4] G. W. Roberts and A. S. Sedra, Spice, 2nd ed., (Oxford University Press, New York, 1997), Eq. (2.1).
[5] T. Deliyannis, Y. Sun, J. K. Fiddler, Continuous-Time Active Filter Design, (CRC-Press, New York, 1999), Eq. (3.47).
[6] M. S. Ghausi and K. R. Laker, Modern Filter Design: Active Rc And Switched Capacitor, (Institution of Engineering and
Technology, 2003), Eq. (2.24).
[7] P. V. A. Mohan, VLSI Analog Filters, (Springer, New York, 2013), Eq.(2.1).
[8] M. H. Rashid, Microelectronic circuits: Analysis and Design, 2nd ed., (Cengage Learning, Stamford USA, 2011), Eqs. (2.48)
and (2.71); 3rd ed., (Cengage Learning, Boston USA, 2017), chap. 2.
[9] Analog Devices, Technical Specification ADA4817: Low Noise, 1 GHz FastFET Op Amps, Rev. D, Figs. 53, 54, Eqs. (4-9),
http://www.analog.com/static/imported-files/data_sheets/ADA4817-1_4817-2.pdf.
[10] L. Solymar "The motivation and technique of writing scientific contributions", Proc. of the IEEE, 51, issue 4, pp. 628 -- 629,
April 1963, "How to Have a Paper Accepted", items 1), 3) and 5), http://ieeexplore.ieee.org/document/1444170/,
DOI: 10.1109/PROC.1963.2240.
[11] J. L. Merill Jr., "Theory of the negative impedance converter", Bell System Tech. J., 30, pp. 88 -- 109, Jan. 1951.
[12] J.C. Linvill, "Transistor Negative-Impedance Converters", Proceedings of the IRE 41 (6): 725 -- 729 (1953), doi:10.1109/
JRPROC.1953.274251.
[13] A.B. Pippard, The Physics of Vibration. The simple classical vibrator (Cambridge University Press., 1978) Sec. 11,
Fig. 11.14.
[14] S. G. Manolev, V. G. Yordanov, N. N. Tomchev, T. M. Mishonov, "Volt-Ampere characteristic of 'black box' with a
negative resistance", arXiv:1602.08090 [physics.ed-ph], Feb. 2016, https://arxiv.org/abs/1602.08090.
[15] G. J. Deboo, "Gyrator type circuit", U.S. patent 3493901, Feb. 3, 1970, https://ntrs.nasa.gov/archive/nasa/casi.
ntrs.nasa.gov/19680000084.pdf, https://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/19710003042.pdf.
[16] R. F. Hoskins, "Stability of negative-impedance convertors", Electronic Letters, 2, Sep. 1966, DOI: 10.1049/el:19660287.
[17] "Analog Filters", Fig. 8-47(A) in H. Zumbahlen, Linear Circuit Design Handbook, Newnes/Elsevier, 2008, ISBN-978-0-
7506-8703-4; Basic Linear Design, Analog Devices, 2007, ISBN-0-916550-28-1;
[18] Analog Devices, AD711: Precision, Low Cost, High Speed, BiFET Op Amp Data Sheet, Rev. E, Fig. 18, http://www.
analog.com/media/en/technical-documentation/data-sheets/AD711.pdf.
[19] E. W. Greeneich, J. F. Delansky, "Controlled Circuit Elements", Fig. 14.20, in W. K. Chen, The Circuits and Filters
Handbook, Boca Raton, Florida, USA: CRC Press, Taylor & Francis Group, 2009, ISBN: 978-1-4200-5887-1.
[20] K. G. McConnell and W. F. Riley, "Tools of tensometry" in A. S. Kobayashi, Handbook on experimental mechanics, Seattle,
Washington, USA: Prentice-Hall Inc., 1987, chap. 3, Fig. 3.6b, Eq. (3.12), DOI: 10.1111/j.1747-1567.1985.tb02042.x.
[21] "Op Amp Basics", Fig. 1-7, Eq. (1-46) in W. G. Jung, Op Amp Applications Handbook, Newnes/Elsevier, 2005, ISBN-0-
7506-7844-5; Op Amp Basics, Analog Devices, 2002, ISBN-0-916550-26-5.
[22] D. G. Nairn, S. B. Franco "Operational Amplifiers", Eq. (16.27) in W. K. Chen, The Circuits and Filters Handbook, Boca
Raton, Florida, USA: CRC Press, Taylor & Francis Group, 2009, ISBN: 978-1-4200-5887-1.
[23] M. Lee, T. Schibli, "Electronics for the Physical Sciences", Physics 3330 course, University of Colorado Boul-
der, (2012), http://www.colorado.edu/physics/phys3330/phys3330_sp12/phys3330_sp12/Home.html; "Experiment #4:
9
Operational Amplifiers and Negative Feedback," Eq. (2), http://www.colorado.edu/physics/phys3330/phys3330_sp12/
phys3330_sp12/Lab_Manual_files/Exp_4_Spring12.pdf.
[24] Analog Devices, Technical Specification ADA4898: High Voltage, Low Noise, Low Distortion, Unity-Gain Stable, High Speed
Op Amp, Rev. E, Table 1, Fig. 3, http://www.analog.com/static/imported-files/data_sheets/ADA4898-1_4898-2.
pdf.
[25] Anfatec Instruments AG, USB LOCKIN 250 LOCKIN AMPLIFIER AMPLIFIER 10 mHz to 250 kHz, http://www.
anfatec.net/downloads/USBLockIn/USBLockIn250_Manual.pdf.
[26] T. M. Mishonov, V. G. Yordanov, A. M. Varonov "Measurement of electron charge qe and Boltzmann's constant kB by a
cheap do-it-yourself undergraduate experiment", arXiv:1703.05224 [physics.ed-ph], Mar. 2017, https://arxiv.org/abs/
1703.05224.
Appendix A: Impedance derivation with operational amplifier output current
In this appendix we are giving a detailed calculation of the problem given in the 3rd Experimental Physics Olympiad
for high-school students [14]. The negative impedance converter shown in Fig. 7 differs from the same shown in Fig. 1
only by the added output current I0 from the operational amplifier. Applying Ohm's law between U0 and the common
FIG. 7. Negative impedance converter with operational amplifier output current I0 added. Besides this, the figure is analogous
to Fig. 1. As a rule currents coming from the voltage supply to the operational amplifier (1/2I0 in our case) are not shown in
the circuits with operational amplifiers.
point, we have
and analogously for
Dividing these equations, we obtain
and substitute it in Eq.(1)
U0 = (I + I0)(R1 + R2),
U− = (I + I0)R1.
U− = U0
R1
R1 + R2
(cid:18)
U = U0
(cid:19)
.
G−1 +
R1
R1 + R2
The Ohm's law applied between U and U0 gives
from where U0 = U − IR3 and this expression is substituted in Eq. (A4) to obtain
U = (U − IR3)
G−1 +
R1
R1 + R2
U − U0 = IR3,
(cid:18)
(cid:19)
.
(A1)
(A2)
(A3)
(A4)
(A5)
(A6)
Therefore for the impedance of the circuit Z = U/I we have
which after a little bit arrangement is
1 − R3
Z
=
1
G−1 +
R1
R1 + R2
Z =
1 −
R3
1
G−1 +
R1
R1 + R2
,
,
10
(A7)
(A8)
confirming Eq. (7). We have to repeat, as a rule currents coming from the voltage supplies to operational amplifiers
and current going to the common point are not given in the circuits drawing; we are making a small exception.
Appendix B: Frequency dependence of the amplification for the main types of amplifiers
1. Differential Amplifier
FIG. 8. Differential amplifier with a finite input resistance Ra (non-zero input conductivity) of the operational amplifier.
Let us trace, see Fig. 8, the voltage drop from the negative (n) input of the differential amplifier and the output (0)
voltage U0. The input current is given by the Ohm law and the voltage at the (-) input of the operational amplifier
is given by the proportion of the voltage divider
(cid:18)
(cid:19)
Un−U0
z+Rf
U− =
In =
Rf +U0 =
Rf
z+Rf
Un +
z
z+Rf
U0.
(B1)
Analogous voltage divider gives the voltage of (+) input of the operational amplifier expressed by the voltage drop
between positive (p) input of the ground
(cid:18)
(cid:19)
Up − 0
z + Rf
U+ =
In =
Rf + 0 =
Rf
z + Rf
Un.
Then we calculate the voltage difference at the inputs of the operational amplifier
U+ − U− =
∆U ≡ Up − Un
z + Rf
Rf −
z
z + Rf
U0
(B2)
(B3)
which together with Eq. (1) gives
Υ∆(ω) ≡
U0
Up − Un
1
=
Λ(ω) + [Λ(ω) + 2a(ω)] G−1(ω) + G−1(ω)
zg(ω)
Zf (ω)
, Zf = Rf
1
,
zg = r +
Λ(ω) =
εa(ω) = zg(ω)σa(ω),
+ jωCa,
jωCg
σa(ω) ≡ 1
Ra
11
(B4)
,
cf. Eq. (3.14) of Ref. [20]. Here we added the correction εa of internal conductivity σa between inputs of operational
amplifier in differential mode. A detailed derivation will be given later in Appendix B.
An instrumentation amplifier can be considered as a buffer of two symmetric non-inverting amplifiers followed by
a difference amplifier. The amplification of the instrumentation amplifier is just the product of the amplifications of
the non-inverting and the difference amplifiers
ΥINS(ω) = ΥNIA(ω)Υ∆(ω).
(B5)
2.
Inverting Amplifier
FIG. 9. Inverting amplifier with a finite common mode input resistance Ra (non-zero input conductivity) of the operational
amplifier.
If for the differential amplifier, see Fig. 9, the positive (p) input is grounded Up = 0, this leads to U+ = 0 and
∆U = −Un hence for the transmission function we get ΥIA(ω) = −Υ∆(ω)or finally
ΥIA(ω) ≡ U0
Un
= −
Λ(ω) =
zg(ω)
Zf (ω)
,
1
1
jωCg
σa(ω) ≡ 1
Ra
Λ(ω) + [Λ(ω) + a(ω)] G−1(ω) + G−1(ω)
zg = r +
, Zf = Rf
εa(ω) = zg(ω)σa(ω),
+ jωCa.
(B6)
,
The subtle difference with Eq. (B4) is only the coefficient in front of a, cf. Eq. (3.10) of Ref. [20]. For negligible the
internal conductivity σa we derive
ΥIA(ω) = −
1
Λ(ω) + [1 + Λ(ω)] G−1(ω)
,
(B7)
12
i.e. Eq. (28) which A large capacitance of the gain impedance stops the offset voltages coming from former amplification
blocks. Additionally, for high enough working frequencies ω r Cg (cid:29) 1 and negligible static-inverse-open-loop gain
0 (cid:28) 1 we obtain the well-known formulae Eq. (7) and Eq. (8) of Ref. [9], see also Ref. [20]. Actually coincidence of
G−1
Eq. (7) ofRef. [9] with Eq. (28) from our paper with reverse engineering gives a proof of our time dependent master
equation Eq. (5). For frequencies much lower than the crossover frequency fcrossover of the operational amplifier the
amplification is in a wide band frequency independent
ΥIA(ω) ≈ −
ΥIA = − Rf
r
2πfcrossoverRf
(Rf + r)s + 2πfcrossover r
,
for
f =
(cid:28) fcrossover.
ω
2π
(B8)
(B9)
For calculation of the pass-bandwidth we will need to know the square of the modulus of the complex amplification
ΥIA(ω)2 = Υ∆(ω)2
=
(cid:2)1+G−1
0 −M ω2τ τg
(cid:3)2
(ωτg)2
+ (ωτg)2
Λ0 ≡ r
Rf
,
M ≡ 1 + Λ0,
(cid:21)2 ,
(cid:20) τ
0 M
+Λ0 +G−1
τg
τg ≡ CgRf .
For large enough amplification r (cid:28) Rf from Eq. (B7) we obtain
(cid:29) 1, ωrCg (cid:29) 1, ωτ (cid:28) 1,
Rf
r
ΥIA(ω) ≈ −
r + 1
Leff ≡ τ Rf , Q =
jωCg
Rf
+ jLeff ω
(cid:112)Leff /Cg
r
,
=
(cid:112)τ Rf /Cg
r
(cid:28) 1,
(B10)
(B11)
and in this approximation the frequency dependence of the amplification reminds of the frequency response of an
overdamped oscillator with low quality factor Q.
Appendix C: Influence of finite common mode input conductivity of operational amplifiers
In this appendix we will investigate the influence of a small conductivity between the inputs of an operational
amplifier in differential mode. For the simplicity of the notations we will write only the big differential mode input
resistance Ra, while above we have included the differential mode input capacitance. In the next subsection we will
start with the inverting amplifier.
1.
Inverting amplifier
Standard scheme of the inverting amplifier is presented in Fig. 9. Let us write the Kirchhoff equations. The input
current Ii is branching to the current If passing trough the feedback resistor Rf and the current Ia flowing between
(-) and (+) inputs of the operational amplifier
Let's trace the voltage drop between the input voltage by gain resistor rg and input resistor Ra to the ground
Ii = Ia + If .
The Ohm law of the internal resistor of the operational amplifier is
−RaIa = U+ − U− = G−1Uo,
Ui = RaIa + rgIi.
(C1)
(C2)
(C3)
where the potential difference between inputs voltages is expressed by the output voltage Uo and reciprocal open loop
gain G−1. Finally starting from the output voltage Uo and passing trough the feedback resistor Rf and gain resistor
rg we reach the input voltage Ui.
13
From Eq. (C3) we express Ia = −Uo/RaG and substitute in Eq. (C2) which now reads
Ui = Uo + Rf If + rgIi.
Ui = −G−1Uo + rgIi,
and gives
The substitution of Ii in Eq. (C1) gives
Ii =(cid:0)Ui + G−1Uo
(cid:18) 1
rg
+
If =
Ui
rg
+
(cid:1) /rg.
(cid:19) Uo
1
Ra
.
G
(C4)
(C5)
(C6)
(C7)
Substitution of derived in such a way currents in Eq. (C4) gives for the output voltage Uo the well-known result
Eq. (3.10) of Ref. [20]
(cid:18)
= −
Uo
Ui
1 + G−1
Rf /rg
1 +
Rf
rg
+
Rf
Ra
(cid:19) .
(C8)
(C13)
In the next subsection we will perform analogous consideration for the non-inverting amplifier.
2. Non-inverting amplifier
The non-inverting amplifier circuit is depicted in Fig. 5. The current from the ground In is branching to the current
If passing through the feedback resistor Rf and the current Ia flowing through the operational amplifier (-) and (+)
inputs. The charge conservation in the branching point is
In = If + Ia.
(C9)
Tracing the voltage drop from ground through the gain resistor rg and the operational amplifier internal resistance
Ra to the input voltage Ui we have
U+ = −rgIn − RaIa.
(C10)
Where we take into account that the input voltage is directly applied to the positive input of the operational amplifier
where Ui ≡ U+. The Ohm law of the internal resistor of the operational amplifier is
−RaIa = U+ − U− = G−1Uo,
(C11)
where the potential difference between the input voltage is expressed by the output voltage Uo and reciprocal open
loop gain G−1. The last circuit to consider is the voltage drop from the output voltage Uo through Rf and rg to
ground
Uo = −If Rf − Inrg.
(C12)
Expressing the currents If from Eq. (C9), In from Eq. (C10), Ia from Eq. (C11) and substituting them in Eq. (C12),
for the ratio of the output voltage Uo to the input voltage Ui we obtain
(cid:18)
Uo
Ui
=
1 + G−1
Rf /rg + 1
Rf
rg
1 +
+
Rf
Ra
(cid:19) .
The differential amplifier analyzed in the next subsection is slightly more complicated.
3. Differential amplifier
14
The differential amplifier circuit is shown in Fig. 8. The feedback current If going through the feedback resistor
Rf is a sum of the input current In from the input voltage Un and the current Ia flowing through the operational
amplifier (+) and (-) inputs
The other input current Ip from the input voltage Up flowing through the gain resistor rg is branching to the current
Ia and the current I0 flowing through the other feedback resistor Rf to ground
If = In + Ia.
(C14)
Ip = I0 + Ia.
(C15)
Now let trace the circuit between Un and the output voltage Uo passing through rg and the feedback resistor Rf
Un − Uo = rgIn + Rf If .
(C16)
Another circuit to consider is from Up through rg and Rf to ground, for which the Kirchhoff's voltage law reads
Substituting If from Eq. (C14) into Eq. (C16), for In we derive
Up = rgIp + Rf I0.
In =
Un − Uo
rg + Rf
− Rf
rg + Rf
Ia.
Expressing I0 from Eq. (C15) and substituting it into Eq. (C17), for Ip we obtain
Ip =
Up
rg + Rf
+
Rf
rg + Rf
Ia.
(C17)
(C18)
(C19)
The difference between positive U+ and negative U− input of the operational amplifier can be expressed simultaneously
by the output voltage Uo and the Ohm law for the internal resistance of the operational amplifier
RaIa = U+ − U− = G−1Uo.
(C20)
The current Ia = Uo/GRa is easily expressed by the open loop gain G, output voltage Uo and internal resistance of
the operational amplifier in differential mode Ra. Finally we write down the Kirchhoff's voltage law for the circuit
from Up to Un through the resistors with values rg, Ra and rg
Up − Un ≡ ∆U = rgIp + RaIa − rgIn,
(C21)
where ∆U = Up − Un denotes the input voltage difference between positive Up and negative Un input voltages.
Substitution of the already derived expressions for the input currents Ip, In and the internal operational amplifier
current Ia into Eq. (C21) yields for the transmission coefficient, i.e. ratio of the output voltage Uo and input voltage
difference ∆U ,
(cid:18)
Uo
∆U
=
1 + G−1
Rf /rg
Rf
rg
1 +
+ 2
Rf
Ra
(cid:19) .
(C22)
For high frequencies we have to take into account also the input capacitance of the operational amplifier in differential
mode Ra → Za = Ra/(1+jωRaCa). For the used ADA4898[24] Ra = 5 kΩ and Ca = 2.5 pF. In all formulae we consider
frequency dependent open-loop gain G−1(ω) = G−1
0 + jωτ given by the master equation of the operational amplifiers
Eq. (1).
|
1709.07133 | 1 | 1709 | 2017-09-21T02:25:13 | Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene Acceptors | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | Non-fullerene acceptors based on perylenediimides (PDIs) have garnered significant interest as an alternative to fullerene acceptors in organic photovoltaics (OPVs), but their charge transport phenomena are not well understood, especially in bulk heterojunctions (BHJs). Here, we investigate charge transport and current fluctuations by performing correlated low-frequency noise and impedance spectroscopy measurements on two BHJ OPV systems, one employing a fullerene acceptor and the other employing a dimeric PDI acceptor. In the dark, these measurements reveal that PDI-based OPVs have a greater degree of recombination in comparison to fullerene-based OPVs. Furthermore, for the first time in organic solar cells, 1/f noise data are fit to the Kleinpenning model to reveal underlying current fluctuations in different transport regimes. Under illumination, 1/f noise increases by approximately four orders of magnitude for the fullerene-based OPVs and three orders of magnitude for the PDI-based OPVs. An inverse correlation is also observed between noise spectral density and power conversion efficiency. Overall, these results show that low-frequency noise spectroscopy is an effective in-situ diagnostic tool to assess charge transport in emerging photovoltaic materials, thereby providing quantitative guidance for the design of next-generation solar cell materials and technologies. | physics.app-ph | physics | Full Paper
Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal
Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene
Acceptors
Kyle A. Luck, Vinod K. Sangwan, Patrick E. Hartnett, Heather N. Arnold, Michael R.
Wasielewski, Tobin J. Marks, and Mark C. Hersam*
K. A. Luck, Dr. V. K. Sangwan, Dr. H. N. Arnold, Prof. T. J. Marks, Prof. M. C. Hersam
Northwestern University, Department of Materials Science and Engineering, and the
Argonne-Northwestern Solar Energy Research Center, 2220 Campus Drive, Evanston, IL
60208, USA
E-mail: [email protected]
P. E. Hartnett, Prof. M. R. Wasielewski, Prof. T. J. Marks, Prof. M. C. Hersam
Northwestern University, Department of Chemistry, and the Argonne-Northwestern Solar
Energy Research Center, 2145 Sheridan Road, Evanston, IL 60208, USA
Prof. M. C. Hersam
Northwestern University, Department of Electrical Engineering and Computer Science, 2145
Sheridan Road, Evanston, IL 60208, USA
Keywords: 1/f noise; organic photovoltaic; PBDTTT-EFT; PC71BM; alternate acceptor
Abstract
Non-fullerene acceptors based on perylenediimides (PDIs) have garnered significant interest
as an alternative to fullerene acceptors in organic photovoltaics (OPVs), but their charge
transport phenomena are not well understood, especially in bulk heterojunctions (BHJs). Here,
we investigate charge transport and current fluctuations by performing correlated low-
frequency noise and impedance spectroscopy measurements on two BHJ OPV systems, one
employing a fullerene acceptor and the other employing a dimeric PDI acceptor. In the dark,
these measurements reveal that PDI-based OPVs have a greater degree of recombination in
comparison to fullerene-based OPVs. Furthermore, for the first time in organic solar cells, 1/f
noise data are fit to the Kleinpenning model to reveal underlying current fluctuations in
different transport regimes. Under illumination, 1/f noise increases by approximately four
orders of magnitude for the fullerene-based OPVs and three orders of magnitude for the PDI-
1
based OPVs. An inverse correlation is also observed between noise spectral density and
power conversion efficiency. Overall, these results show that low-frequency noise
spectroscopy is an effective in-situ diagnostic tool to assess charge transport in emerging
photovoltaic materials, thereby providing quantitative guidance for the design of next-
generation solar cell materials and technologies.
1. Introduction
Following the seminal demonstration of bilayer heterojunction organic photovoltaic
(OPV) cells,[1] intense research effort has been devoted toward accelerating the practical
feasibility of OPVs. This research is driven in part by the earth abundance and synthetic
tunability of organic semiconductor constituents, as well as the potential for low-cost, high-
throughput manufacturing on flexible substrates.[2,3] Following the early work on bilayer
OPVs, the next major advance occurred with the introduction of the bulk heterojunction
(BHJ) architecture. By employing a solution-processable blend of a polymer donor and
fullerene acceptor,[4] the BHJ architecture enables thicker photoactive layers to harvest more
of the solar spectrum while maintaining efficient exciton dissociation throughout the entire
photoactive blend.[5] Recently, fullerene-based BHJ cells have not only achieved single-
junction power conversion efficiencies in excess of 10%,[6,7] but have also been integrated
with large-area flexible substrates.[8–10] However, a key limitation of fullerene acceptors is
their energy intensive synthesis and environmental instability[11,12] rendering them non-ideal
for mass production.
The scalability limitation of fullerenes has motivated the exploration of high-
performance non-fullerene acceptors.[13–18] Among the most widely studied classes of non-
fullerene acceptors are perylenediimide (PDI) derivatives,[19–21] which are promising due to
strong light absorption, high electron mobilities, environmental stability, and amenability to
mass production.[22–26] However, the performance of OPVs employing PDI derivatives has
2
lagged behind their fullerene counterparts[27] due to increased tendency to form large
crystalline domains[28] that inhibit exciton splitting. Consequently, research efforts have been
devoted to strategies to disrupt long-range PDI crystallinity including the incorporation of
"swallowtail" side groups[29] and functionalizing the "headland" positions to achieve slip-
stacking.[30] Additional work has focused on using fused PDI units including dimers,[31,32]
trimers,[33] and tetramers,[34] which have attained performance rivaling fullerenes.
While these strategies have enabled BHJ morphologies with enhanced efficiency,
PDIs still exhibit a significant barrier to charge separation.[35,36] Conversely, fullerenes exhibit
essentially barrierless charge separation,[37] enabling ultrafast exciton dissociation with
various donor materials such as poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[[4,8-bis[(2-
ethylhexyl)oxy]benzo[1,2-b:4,5-b/]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]-
thieno[3,4-b]thiophenediyl]] (PTB7).[38–41] Following exciton dissociation, separated charges
must travel through the remainder of the active layer to be collected at their respective
electrodes. Charge transport can occur via either a drift-dominated or a diffusion-dominated
mechanism depending on the operating regime and heterojunction materials, morphology, and
processing conditions.[40,42,43] While preliminary theoretical work predicts less efficient charge
transport in PDI networks in comparison to fullerene networks,[44] charge transport in BHJ
OPVs employing PDI acceptors has not been thoroughly characterized experimentally.[45]
Low-frequency noise (LFN) spectroscopy is an in-situ, non-destructive technique to
probe charge transport in OPVs that reveals information about recombination dynamics and
fluctuations not accessible by standard current-voltage characteristics. Excess 1/f noise in the
bandwidth of 1 Hz – 10 kHz (below white noise) originating from resistance fluctuations is
particularly useful for elucidating trapping-detrapping and scattering processes.[46] LFN
spectroscopy is a previously established diagnostic tool for silicon diode and photovoltaic
reliability.[47–49] Furthermore, LFN has been used to more accurately characterize the specific
detectivity of photodiodes and photodetectors, since photodetector performance is limited by
3
both shot noise and excess 1/f noise.[50–54] Moreover, noise spectroscopy has been used to
probe percolating conduction networks
in organic blend films.[55] However, LFN
measurements have been relatively infrequently utilized for OPVs, particularly for devices
employing non-fullerene acceptors.
In contrast, other techniques, such as transient photovoltage, differential charging
experiments, and impedance spectroscopy have been more widely used to probe OPV
recombination dynamics.[56–59] With regard to impedance spectroscopy, significant effort has
been devoted to develop robust equivalent circuit models incorporating both resistive and
capacitive elements. These models, in conjunction with working hypotheses, enable the
determination of relevant device parameters such as the recombination resistance, chemical
capacitance, and charge carrier lifetimes that ultimately impact power conversion efficiency
(PCE).[60] Impedance spectroscopy measurements have revealed solar cell charge
recombination dynamics over a large frequency bandwidth (typically, 1 Hz – 1 MHz), in
different bias regimes, and under varying illumination conditions.[60–64] Even materials
parameters such as carrier mobility, carrier lifetime, and density of states have been extracted
from impedance spectroscopy.[65] Overall, impedance spectroscopy and LFN measurements
provide complementary perspectives on charge transport phenomena, suggesting that a
combined approach will be particularly useful for emerging OPV and related photovoltaic
systems.
Here, we study current fluctuations via LFN measurements and impedance
spectroscopy
in OPV BHJ systems utilizing poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-
yl)benzo[1,2-b;4,5-b/]dithiophene-2,6-diyl-alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-
b]thiophene-)-2-carboxylate-2-6-diyl)] (PBDTTT-EFT) (Figure 1a)[66,67] as the electron donor
and either [6,6]-phenyl-C71-butryic acid methyl ester (PC71BM)[66,68] or [1,2:3,4]-bis-[N,N′-
bis-perylenediimide-1,12-yl]-benzene (Ph2a)[31] as the electron acceptor (Figure 1a). These
BHJs enable comparisons between OPVs utilizing the recently discovered high-performance
4
dimeric PDI acceptor, Ph2a, and a conventional fullerene acceptor (PC71BM). We first
analyze current-voltage characteristics
in
the PBDTTT-EFT:PC71BM and PBDTTT-
EFT:Ph2a OPV systems. These direct current (DC) measurements confirm higher PCE for the
PBDTTT-EFT:PC71BM system, as expected.[67] Next impedance spectroscopy and LFN
spectroscopy measurements are performed under dark conditions over a range of biases to
extract steady-state p-n heterojunction models. All devices show 1/f behavior at a sufficiently
small frequency bandwidth where thermal and shot noise is minimized. These measurements
reveal a narrower density-of-states (DOS) profile in the Ph2a-based cells in comparison to
fullerene-based OPVs. A narrower DOS profile points to a higher degree of recombination in
PBDTTT-EFT:Ph2a compared to PBDTTT-EFT–PC71BM, as an inverse correlation between
the proportion of charge traps (which lead to recombination) and the density-of-states breadth
has been previously observed in semiconducting organic blend films.[39,55]
Furthermore, for the first time in OPVs, we fit bias-dependent LFN data to the
Kleinpenning model.[69] This fit is made possible by extracting the carrier lifetime (τ) by
impedance spectroscopy. Subsequently, correlated LFN and impedance measurements are
studied under 1 sun illumination. Noise spectral density is found to increase for both systems
under illumination, with lower spectral density being correlated with higher PCE. Overall, this
study establishes correlated 1/f noise and impedance spectroscopy as a powerful in-situ
analytical tool for OPVs to probe recombination dynamics. This information can be used to
inform materials selection and processing parameters, with the potential to streamline device
optimization for emerging photovoltaic materials.
2. Results and Discussion
2.1. Solar Cell Performance
The chemical structures of the active layer materials used in this study, including
PBDTTT-EFT, PC71BM, and Ph2a, are shown in Figure 1a. The PBDTTT-EFT donor
5
polymer is a synthetic extension of the well-known donor polymer (PTB7).[66,67] In PBDTTT-
EFT, the 2-ethylhexyl-oxy side chains of PTB7 are substituted with 2-ethylhexyl-thienyl side
chains, which concurrently extends absorption and increases the highest occupied molecular
orbital (HOMO) energy. Among fullerene acceptors, PC71BM pairs particularly well with
PTB7 and its derivatives due to its complementary solar spectrum absorption, favorable
lowest unoccupied molecular orbital (LUMO) energy level alignment, and high carrier
mobility, affording high internal quantum efficiencies (IQEs) in OPVs.[66,68] In addition, the
high-lying HOMO energy in PBDTTT-EFT increases the HOMO-LUMO offset in PBDTTT-
EFT:PC71BM OPVs, thereby increasing the device open-circuit voltage compared to that of
the PTB7PC71BM system.[67,70]
While fullerenes have achieved high performance with PTB7-based donor materials,
their energy-intensive synthesis has, as noted above, motivated exploration of non-fullerene
acceptor materials,[11] especially PDI derivatives that can be manufactured at low cost.[30]
Note that the PBDTTT-EFT donor polymer exhibits excellent performance in OPV cells that
employ the dimeric PDI acceptor, Ph2a.[31] Ph2a exhibits complementary absorption with
PBDTTT-EFT and its fused, twisted molecular structure translates into desired BHJ
morphologies with high electron mobility.[31] In this work, the PBDTTT-EFT, PC71BM, and
Ph2a active layer materials are utilized in an inverted OPV BHJ architecture (Figure 1b). This
device geometry employs commonly used interfacial layers, namely sol-gel zinc oxide (ZnO)
as the electron transport layer and thermally evaporated molybdenum oxide (MoOx) as the
hole transport layer.[71] In this study, all device fabrication steps following the ZnO layer
deposition are carried out in an argon-filled glovebox. Samples are encapsulated prior to
removal from the glovebox and are stable over the timescale of current-voltage, LFN, and
impedance spectroscopy measurements in ambient conditions.
Figure 1c shows the current density-voltage (J-V) characteristics of representative
PBDTTT-EFT:PC71BM and PBDTTT-EFT:Ph2a devices in the dark. As has been observed
6
previously, the J-V characteristics reveal higher leakage currents in the PBDTTT-EFT:Ph2a
device than the PBDTTT-ETT:PC71BM device.[44] To gain deeper physical insight into the J-
V characteristics, these curves were fit under forward bias using the Shockley diode equation
with a series resistor term (eq. 1),[72]
(1)
where I is current, I0 is reverse bias saturation current, q is the elementary unit of charge, V is
the applied bias, Rs is the series resistance, n is the ideality factor (n = 1 for an ideal diode), kB
is Boltzmann's constant, and T is temperature. The fits are shown in Figure S1, which were
generated using
the web-enabled
tool "PV Analyzer".[72] As expected, PBDTTT-
EFT:PC71BM (5.8 × 10-12 A) shows a lower reverse bias saturation current than PBDTTT-
EFT:Ph2a (3.6 × 10-10 A). Additionally, the PBDTTT-EFT:PC71BM device has n = 1.8 and Rs
= 1.1 Ω cm2 in contrast to the PBDTTT-EFT:Ph2a device with n = 2.3 and Rs = 1.3 Ω cm2. A
higher ideality factor and a higher series resistance for the non-fullerene acceptor device
indicate that higher recombination currents are present in the Ph2a devices and also likely
accounts for the observed "kink" in the J-V curve at ~0.80 V.[73]
Figure 1d shows the illuminated J-V characteristics for the PBDTTT-EFT:PC71BM
and PBDTTT-EFT:Ph2a devices that achieved power conversion efficiencies of 8.3% and
4.9%, respectively. The performance of the PBDTTT-EFT:PC71BM cell agrees well with
literature precedent.[6,67,74,75] Further optimization of the PBDTTT-EFT:Ph2a system in this
work led to an increase in OPV performance over previously reported results.[31] A sample of
eight PBDTTT-EFT:PC71BM devices attained a power conversion efficiency of 8.1 ± 0.2%,
open-circuit voltage of 0.79 ± 0.004 V, short-circuit current density of 15.2 ± 0.2 mA cm-2,
and fill factor of 0.68 ± 0.01. Eight PBDTTT-EFT:Ph2a devices attained a power conversion
efficiency of 4.8 ± 0.1%, open-circuit voltage of 0.91 ± 0.003 V, short-circuit current density
of 11.0 ± 0.1 mA cm-2, and fill factor of 0.48 ± 0.01. Plots of the external quantum efficiency
7
I=I0eq(V-IRs)nkBT
(EQE) spectra for the PBDTTT-EFT:PC71BM and PBDTTT-EFT:Ph2a devices and the
unnormalized optical absorption spectra are shown in Figure S2a and S2b, which reveals that
the higher short-circuit current in PBDTTT-EFT:PC71BM derives from a broadband
enhancement in EQE over the PBDTTT-EFT:Ph2a system. Indeed, the lower short-circuit
currents and fill factors in the non-fullerene acceptor devices suggest that charge
recombination
is
limiting performance
in
these materials.[19,30,31] Nevertheless,
the
performance attained here compares well with standard high-performance OPV systems such
as PTB7:PC71BM.[66,76–79] Thus, these samples are appropriate for further characterization
with LFN and impedance spectroscopy.
2.2. Correlated Low-Frequency Noise and Impedance Spectroscopy in the Dark
Previously, LFN spectroscopy has been employed to assess the quality of charge
percolation networks in organic polymer blends.[55] This technique has also been used to
reveal the role of charge traps in organic field-effect transistors[80–84] and organic light-
emitting diodes.[85] However, there have only been a handful of LFN studies to date on OPVs.
Most of these focused on studying the role of the donor-to-acceptor ratio and annealing
conditions on charge transport. Furthermore, these LFN reports have been limited to the
canonical poly(3-hexylthiophene-2,5-diyl):[6,6]-phenyl-C61-butyric
acid methyl
ester
(P3HT:PC61BM) system.[86–89] While there has been an LFN study on (poly[2,6-(4,4-bis-(2-
ethylhexyl)-4H-cyclopenta[2,1-b;3,4-b0]-dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]
(PCPDTBT):PC71BM OPVs that showed power conversion efficiencies in the range of 1 –
3%,[90] LFN has not yet been performed on more recent, higher-performance OPVs such as
PTB7:PC71BM or devices utilizing emerging non-fullerene acceptors. Since recombination is
a known challenge in PDI acceptors,[31] LFN analysis is expected to yield important physical
insights in these OPV materials since 1/f noise is caused by resistance fluctuations in metals
and semiconductors and originates from either mobility fluctuations (Hooge model)[91] or
carrier number fluctuations (McWhorter model).[92] This 1/f excess noise dominates other
8
sources of noise, such as generation-recombination noise, shot noise, and Johnson-Nyquist
(i.e., thermal) noise, at low frequencies. Both Johnson-Nyquist and shot noise show no
spectral dependence (characteristic of white noise).[69] Generation-recombination noise is
usually characterized by either a single or a few Lorentzians producing sharp spectral
transitions or spectral flattening at a characteristic frequency.[93,94] Deviations from strictly 1/f
behavior (such as 1/f1.5 or 1/f2) can be explained by invoking modified models to specific
materials.[95,96] Hooge's empirical relation (eq. 2) has been widely invoked to explain noise
behavior in a wide variety of materials and devices,
(2)
where SI is the current power spectral density, αH the empirical Hooge parameter, N the carrier
density, I the mean device current, and f is the frequency. The exponents β and γ are ideally
expected to be equal to 1 and 2, respectively. The Hooge mobility fluctuation model has been
previously used to model the noise spectral density in P3HT:PC61BM OPVs.[87,88] Building
from Hooge's empirical relation,[97] Kleinpenning derived a model to explain V-shaped noise
characteristics in silicon p-n junction diodes in the dark and under illumination.[98,99] In
particular, eq. 3 describes 1/f noise in the dark for a diffusion-current dominated p-n junction
diode (an analogous case to OPVs),
(3)
where SI(f) is the current power spectral density, αH is the Hooge parameter, q is the
elementary unit of charge, I0 is the reverse bias saturation current, f is frequency, τ is the
charge carrier lifetime, V is the applied bias, kB is Boltzmann's constant, and T is temperature.
While the Kleinpenning p-n junction noise model has been successful in describing classical
systems such as silicon solar cells, it has not yet been attempted for OPVs.[100–102]
9
SI=aHNaeèçöø÷Igfbaeèçöø÷SI(f)=aHqI04ft(eqVkBT-1-qVkBT)
We first extract τ from impedance spectroscopy to more accurately fit the LFN data to
the Kleinpenning model. Impedance spectroscopy measurements were conducted in the dark
to obtain the charge carrier lifetimes. Figure 2a and 2b show Cole-Cole plots (–reactance, Z"
versus resistance, Z') of the impedance response of a PBDTTT-EFT:PC71BM device and a
PBDTTT-EFT:Ph2a device, respectively (see Experimental Section for details). In the present
study, we employ a proposed equivalent circuit model based on previous work with BHJ
P3HT:PCBM OPVs that models both OPV systems well here. In particular, the model
assumes the superposition of two partial semicircular arcs to describe the impedance
response,[60] as shown in Figure 2c. It incorporates a resistor Rs (series resistance) in series
with a resistor Rbulk (bulk resistance) and capacitor Cgeo (geometrical capacitance) in parallel.
The RbulkCgeo element is also in parallel with a resistor Rrec (recombination resistance) and
constant phase element (CPE).[103] The Rs element is the device series resistance, which for
both samples is generally on the order of ~15-20 Ω, or ~0.9-1.2 Ω cm2 (the device area is ~
0.06 cm2), in good agreement with the Shockley diode model fits of the dark J-V
characteristics. Additionally, RbulkCgeo is associated with a bulk resistance and geometrical
capacitance (i.e., the electrodes can be conceptualized as parallel plates and the active layer as
the dielectric). Lastly, RrecCPE is physically understood to be related to charge transfer
events at the donor-acceptor interface, where Rrec is the recombination resistance and CPE is
related to the chemical capacitance. Note that a constant phase element can be conceptualized
as a capacitor with a distribution of relaxation times, which not only simplifies the equivalent
circuit model for OPV systems but also has successfully modeled the non-ideal capacitive
nature of heterogeneous interfaces in BHJ OPV devices.[103] Eq. 4 shows the chemical
capacitance that can be derived from the CPE (eq. 4),
(4)
10
Cm=tavgRrec=(RrecQ)1/mRrec
where Cµ is the chemical capacitance, τavg is the average of the distribution of relaxation times,
Rrec is the recombination resistance, Q is the CPE magnitude, and m is an ideality factor that is
characteristic of the relaxation time distribution. An ideal capacitor has m = 1, with m ranging
from 0.54 to 0.75 in this work.
As excess charge is generated and stored in the active layer (e.g., under an applied
electrical or optical bias), the chemical capacitance increases and the recombination resistance
decreases. By definition, the geometrical capacitance is expected to be nearly constant with
applied bias. In contrast, the chemical capacitance is expected to increase exponentially with
increasing bias as excess electrons populate the electron acceptor LUMO. These trends help
distinguish between the two R-C elements when examining bias-dependent impedance data.
The characteristic charge-discharging time constant of each R-C element is obtained by
multiplying the values together. The greater time constant is associated with the charge carrier
lifetime, since the larger time constant limits charge extraction.
Plots of Rbulk and Cgeo are shown in Figure 3a for PBDTTT-EFT:PC71BM and Figure
3b for PBDTTT-EFT:Ph2a. The increase in Cgeo at larger biases has been previously observed,
and is likely related to a modified relative permittivity due to a large injected carrier
population.[60] The lower bias Cgeo values and film thicknesses (measured by profilometry)
can be used to calculate the dielectric constant, εr, assuming a parallel-plate model. For
PBDTTT-EFT:PC71BM, the 2.72 nF geometrical capacitance and 98 nm film thickness yield
εr = 5.0. For PBDTTT-EFT:Ph2a, with a geometrical capacitance of 2.10 nF and film
thickness of 70 nm, we obtain εr = 2.8. These values are comparable to previous reports,[60]
and well within the range of theoretical capacitance values possible for organic materials.[104]
Figure 3c and 3d show the extracted recombination resistance and chemical
capacitance for PBDTTT-EFT:PC71BM and PBDTTT-EFT:Ph2a, respectively. Overall, the
PBDTTT-EFT:PC71BM results are similar to the P3HT:PC61BM system,[60,65,105] with Rrec
decreasing monotonically with increasing bias. The chemical capacitance Cµ exhibits a power
11
law dependence on sample bias with a scaling exponent of ~14. While Cµ is expected to
increase exponentially, slight deviations from an exponential dependence have been observed
previously and attributed to electron trapping in the conduction band.[106–109] While Rrec
decreases monotonically with increasing bias for PBDTTT-EFT:Ph2a as expected, the
chemical capacitance exhibits greater invariance at lower biases and decreases significantly
from 0.60 V to 0.80 V. Note that decreasing and/or negative chemical capacitance at
increasing forward bias, have been observed previously in organic solar cells and attributed to
a decrease in the series resistance under larger forward bias that modulates the conductivity,
such that additional carrier injection leads to more discharging as opposed to charge
accumulation.[110] Since the average time constant associated with RbulkCgeo (~400 µs at low
forward bias) is greater than the time constant for RrecCPE (~100 µs at low forward bias) for
PBDTTT-EFT:PC71BM, RbulkCgeo is the limiting element to charge collection and is
therefore assigned to be the charge carrier lifetime, τ. In contrast, for PBDTTT-EFT:Ph2a, the
average time constant associated with RbulkCgeo (~200 µs at low forward bias) is lower than
the time constant for RrecCPE (~800 µs at low forward bias), and thus RrecCPE is assigned
to be the charge carrier lifetime. In the dark, RrecCPE is likely associated with resistance to
interfacial charge transfer and interfacial charge accumulation.[106,111] Since computational
studies have argued that there is more efficient interfacial charge transfer between fullerenes
than in PDIs,[40,44] it is not surprising to see that RrecCPE plays a more significant role in the
PBDTTT-EFT:Ph2a system. The charge carrier lifetime, τ, is shown in Figure 3e and 3f for
PBDTTT-EFT:PC71BM and PBDTTT-EFT:Ph2a, respectively. Note that the lifetimes for
both samples are within the expected range (i.e., hundreds of μsec),[40] and that the values for
PBDTTT-EFT:Ph2a are approximately the same as the PBDTTT-EFT:PC71BM lifetimes. As
shown in the carrier lifetime plots, an exponential decay function provides a good fit to both
sets of lifetime data in the dark.
12
After extracting the charge carrier lifetimes, LFN measurements were next performed
on these OPV systems. Figure 4a and 4b show current noise spectral density (SI) as a function
of frequency at biases of -1 V and +0.90 V for a PBDTTT-EFT:PC71BM device and a
PBDTTT-EFT:Ph2a device in the dark, respectively. Under reverse bias, SI is significantly
lower (around a factor of ~100x across the frequency bandwidth measured) for PBDTTT-
EFT:PC71BM versus PBDTTT-EFT:Ph2a. While differences between these systems may be
attributable to injection related noise,[112,113] we note that the higher SI in PBDTTT-EFT:Ph2a
correlates with its lower power conversion efficiency, higher dark diode current, larger diode
ideality factor, and lower recombination resistance (at equivalent biases). This observation
indicates that Ph2a-based BHJ OPVs have a greater proportion of defects in comparison to
PC71BM-based BHJ OPVs. Similar trends have been observed in P3HT:PC61BM OPVs,
where the dark diode current and SI concurrently decrease when the active layer is annealed at
higher temperatures, reducing film defect density.[58] Moreover, lower power conversion
efficiency and noise amplitude have also been observed in silicon solar cells irradiated by
proton irradiation.[101] Furthermore, a lower magnitude of SI has been also correlated with
higher power conversion efficiency and lower defect density in silicon solar cells.[114] This
validates the higher performance and lower noise magnitude observed in PBDTTT-EFT–
PC71BM. These trends can be further verified by calculating the specific detectivity, which is
indicative of the photodetector quality of these devices. The detectivity is calculated using eq.
5,[115]
(5)
where D* is the detectivity, λ the wavelength, A the device area, EQE the external quantum
efficiency, h Planck's constant, c the speed of light, and SI is the current power spectral
density. More accurate values of SI are obtained from LFN measurements in contrast to
inferring the value from the measured dark diode current, which only accounts for shot noise
13
D*=leA×EQEhcSI
and neglects 1/f noise.[50–53] Values for SI are chosen at the same frequency as employed for
the EQE measurements, 30 Hz. Using √SI values of 3.14 × 10-11 A Hz-1/2 for PBDTTT-
EFT:PC71BM and 6.65 × 10-10 A Hz-1/2 for PBDTTT-EFT–Ph2a, noting the device area of
~0.06 cm2, and choosing λ = 700 nm (with EQE values of 0.70 and 0.55 for PBDTTT-
EFT:PC71BM and PBDTTT-EFT–Ph2a, respectively), the calculated detectivity values are
3.08 × 109 Hz-1/2 cm W-1 for PBDTTT-EFT:PC71BM and 1.05 ×108 Hz-1/2 cm W-1 for
PBDTTT-EFT–Ph2a. Evidently, lower detectivity values are correlated with higher defect
densities.[54] While the PBDTTT-EFT:Ph2a detectivity is lower, note that there is interest in
developing organic photodetectors with red-shifted absorption in comparison to fullerene-
based photodetectors, for near-infrared detection.[54] Since PDIs are more easily synthetically
tuned than their fullerene counterparts,[30] the photodetectivity values observed here indicate
the potential for near-infrared active PDI-based organic photodetectors.
Further analysis of the LFN data shows that both samples in Figure 4a,b exhibit 1/fβ
behavior under reverse bias, where β is 1.02 and 1.36 for PBDTTT-EFT:PC71BM and
PBDTTT-EFT:Ph2a, respectively. For the entire sample set, three PBDTTT-EFT:PC71BM
devices exhibited β = 1.01 ± 0.03 at -1 V and three PBDTTT-EFT:Ph2a devices exhibited β
= 1.19 ± 0.14 at -1 V. The forward bias spectra exhibit 1/fβ behavior for f < 10 Hz, with β =
1.21 for PBDTTT-EFT:PC71BM (β = 1.13 ± 0.11 for three devices) and β = 1.25 for
PBDTTT-EFT:Ph2a (β = 1.19 ± 0.06 for three devices). Previously, conductive P3HT films
mixed with insulating polystyrene have shown increased charge trapping, leading to higher
values of β.[55] Correspondingly, the higher β values observed in PBDTTT-EFT:Ph2a OPVs
suggest that less efficient charge transport and more recombination are present in this system
relative to PBDTTT-EFT:PC71BM. Methods to potentially mitigate these recombination
events and tune OPV film morphology include optimized processing via thermal or solvent
annealing[116–118] or the incorporation of processing additives,[119,120] which could potentially
enhance the performance of the PBDTTT-EFT:Ph2a system. Furthermore, tuning the
14
molecular weight of the donor polymer has been shown via transmission electron microscopy
(TEM) to significantly impact donor-acceptor blend aggregation, with a high degree of donor-
acceptor
interfacial overlap minimizing
recombination
and optimizing device
performance.[121] Therefore, the observed correlation between β values extracted from low-
frequency noise measurements and interfacial overlap observed via TEM suggests that low-
frequency noise measurements have the potential to reveal performance-limiting structural
mechanisms that other destructive techniques, such as TEM, can also provide.
While the reverse-biased LFN spectra in Figure 4a and 4b exhibit typical 1/f behavior,
the forward bias LFN spectra flatten at frequencies exceeding 10 Hz. This flattening in the
LFN spectra was also observed by Landi in P3HT:PC61BM OPVs,[88] albeit at higher
frequencies than what is observed here. Note that additional annealing of the aforementioned
P3HT:PC61BM OPVs upshifted the corner flattening frequency beyond the experimental
bandwidth. Since the devices in the present study are not annealed during fabrication and did
not undergo any post-fabrication annealing, it is not surprising that the corner flattening
frequency is downshifted relative to P3HT:PC61BM OPVs. One possible culprit for the
flattening is shot noise, which can dominate low-frequency noise at high driving currents.
Shot noise SI scales as ~I1.[69] Plots of Log(SI) vs Log(I) for PBDTTT-EFT:PC71BM and
PBDTTT-EFT:Ph2a at high forward biases (see Figure S3a and S3b) reveal the current
exponent γ for PBDTTT-EFT:PC71BM to be 1.66 ± 0.10 (1.67 ± 0.11 for three devices) and γ
for PBDTTT-EFT:Ph2a to be 1.59 ± 0.09 (1.54 ± 0.12 for three devices). These values rule
out shot noise alone as the origin of the spectral flattening. Another related possibility is
Johnson-Nyquist noise.[88] The magnitude of Johnson-Nyquist noise can be calculated using
eq. 6[122]
(6)
15
SI=4kBTR
where SI is the noise spectral density, kB is Boltzmann's constant, T is temperature, and R is
the device resistance. Local linear fits of the device current-voltage plots were used to obtain
values for R at the same high forward biases used for noise measurements. In particular, the R
values obtained for PBDTTT-EFT:PC71BM and PBDTTT-EFT:Ph2a were 25 Ω and 250 Ω
respectively, leading to an expected Johnson-Nyquist noise level of ~10-22 - 10-23 A2/Hz.
However, this value is significantly lower than the measured noise levels (~10-15 A2/Hz)
under high forward bias. Therefore, thermal noise also does not account for the observed
spectral features. Another possible source of this flattening may be carrier generation-
recombination noise that shows flattening of the noise spectral density before a sharp
downward turn (Lorentzian) at a corner frequency beyond the bandwidth explored here.[93]
Generation-recombination noise has been observed before in similar amorphous systems that
possess a high degree of structural disorder (e.g., amorphous silicon solar cells[123] and
pentacene thin-film transistors[94]). In this report, we do not pursue the source of this noise at
higher frequencies further and instead focus the analysis in the low-frequency regime
where1/f behavior is firmly established.
We next discuss the dependence of LFN on voltage bias to further elucidate its origin
in these devices. Figure 4c and 4d show plots of SI as a function of voltage at f = 2 Hz for the
PBDTTT-EFT:PC71BM and PBDTTT-EFT:Ph2a systems, in the dark, respectively. In both
cases, the voltage dependence of the noise is a V-shaped curve (in the log-linear plot) with a
vertex at 0.0 V. The plot for PBDTTT-EFT:Ph2a is visibly more symmetric than for
PBDTTT-EFT:PC71BM, which is related to the fact that dark current density-voltage data are
also more symmetric for PBDTTT-EFT:Ph2a (Figure 1c). Additionally, as shown in Figure
S4, SI does not show an I2 dependence, with a current exponent of 0.99 ± 0.09 for PBDTTT-
EFT:PC71BM and a current exponent of 1.09 ± 0.05 for PBDTTT-EFT:Ph2a, suggesting the
noise does not simply scale with device current. Previously, V-shaped voltage dependence of
noise was observed in silicon p-n homojunction photodetectors and solar cells and described
16
by Kleinpenning's diffusion-current dominated p-n junction diode model (eq. 3).[69,98,124,125] In
these devices, the Kleinpenning model has been fit with forward and reverse bias diode data
using a constant value for τ.[69] However, as shown in Figure 3e and 3f, the charge carrier
lifetimes in OPV systems vary as a function of applied positive bias. Therefore, we have
modified the Kleinpenning model to fit the bias-dependent SI data by taking a negative
exponential functional form for τ as deduced from impedance spectroscopy. This approach
yields fits to the PBDTTT-EFT:PC71BM and PBDTTT-EFT:Ph2a noise spectral density–
voltage data (Figure 4c and 4d). The PBDTTT-EFT:Ph2a system exhibits a higher diode
ideality factor and series resistance than PBDTTT-EFT:PC71BM, which likely accounts for
the better fit for PBDTTT-EFT:PC71BM. Previously, the metric αH/τ has been reported to
range from 105-108 s-1 for P3HT:PC61BM OPVs.[86] Using extracted fit coefficients, the metric
αH/τ is ~3 × 107 s-1 for PBDTTT-EFT:PC71BM and ~3 × 106 s-1 for PBDTTT-EFT:Ph2a,
which is in reasonable agreement with the values reported for P3HT:PC61BM. Thus, the
Kleinpenning model, originally developed for crystalline and homogenous p-n junctions, also
describes the noise characteristics of highly disordered and heterogeneous BHJ OPV systems,
utilizing conventional fullerene and emerging non-fullerene acceptors.
2.3. Correlated Low-Frequency Noise and Impedance Spectroscopy under Illumination
While correlated LFN measurements and impedance spectroscopy of OPVs in the dark
provide useful insights into charge dynamics, in-situ measurements of LFN and impedance
under illumination have the potential to further elucidate the performance-limiting
mechanisms of these OPV devices. While only one report has studied 1/f noise of OPVs under
illumination,[90] impedance spectroscopy has been more widely applied to OPVs under
operating conditions, including the canonical materials systems P3HT:PC61BM[60,64,65] and
PTB7:PC71BM.[126] Here, we report correlated LFN and impedance analysis of both
PBDTTT-EFT:PC71BM and PBDTTT-EFT:Ph2a OPV samples under AM1.5G 1 sun
illumination.
17
Figure 5a and 5b show Cole-Cole plots for a PBDTTT-EFT:PC71BM device and a
PBDTTT-EFT:Ph2a device under 1 sun, respectively. The reactance and the resistance are
reduced by a factor of ~100x when photo-generated carriers are present. While both the bulk
and recombination resistance decrease under illumination, the bulk resistance drastically
reduces. Additionally, the chemical capacitance values under illumination exhibit a power law
dependence as a function of applied bias. If the geometrical capacitance was a dominant
factor here, the capacitance should be invariant as a function of applied bias. Therefore, the
contribution of this R-C element to the overall impedance response is effectively negligible.
As a result, impedance data under illumination were fit to a simpler equivalent circuit model
in comparison to the model used for dark measurements (Figure 5c).[126] Specifically, this
model incorporates a resistor (Rs) in series with a resistor (Rrec – recombination resistance)
and capacitor (Cµ - chemical capacitance) in parallel. The bias dependence of Rrec and Cµ is
shown in Figure 6a for PBDTTT-EFT:PC71BM and Figure 6b for PBDTTT-EFT:Ph2a. As
sample bias increases, Rrec decreases monotonically, which has been previously observed in
P3HT:PC61BM OPVs.[60] Cµ exhibits a power law dependence for both systems, where the
scaling exponent is ~2.6 for PBDTTT-EFT:PC71BM and ~1.5 for PBDTTT-EFT:Ph2a. While
Cµ is expected to show exponential behavior, the deviation observed here is the possible result
of electron trapping, as has been previously noted.[106–109] Notably, the significantly lower
values for Rrec under illumination (by a factor of ~10x) in comparison to the dark data imply a
decreased lifetime due to the large population of photo-generated carriers. Indeed, τ for both
PBDTTT-EFT:PC71BM (Figure 6c) and PBDTTT-EFT:Ph2a OPVs (Figure 6d) is reduced by
a factor of ~10x under illumination. Additionally, the τ values for PBDTTT-EFT:PC71BM are
greater than for PBDTTT-EFT:Ph2a at low bias. Larger lifetimes correlate with higher power
conversion efficiency in P3HT:PC61BM OPVs,[60] a trend also observed here for the
illuminated data.
18
Lastly, we discuss LFN measurements under 1 sun illumination. Figure 7a and 7b
show noise spectral density as a function of frequency at -1 V and +1 V, for PBDTTT-
EFT:PC71BM and PBDTTT-EFT:Ph2a devices, respectively. Qualitatively, both dark and
illuminated data reveal similar noise spectral behavior under reverse bias (Figure 4a, 4b, 7a,
7b). Under illumination, both sets of devices exhibit 1/fβ behavior with β = 1.05 for PBDTTT-
EFT:PC71BM (β = 1.17 ± 0.13 for three devices) and β = 1.08 for PBDTTT-EFT:Ph2a (β =
1.17 ± 0.15 for three devices). The forward bias spectra exhibit 1/fβ behavior for f < 10 Hz,
with β = 1.50 for PBDTTT-EFT:PC71BM (β = 1.82 ± 0.23 for three devices) and β = 1.47 for
PBDTTT-EFT:Ph2a (β = 1.38 ± 0.23 for three devices). Figure S5a and S5b show Log(SI) vs
Log(I) under high forward bias for PBDTTT-EFT:PC71BM and PBDTTT-EFT–Ph2a,
respectively. The current exponent for PBDTTT-EFT:PC71BM is γ = 0.71 ± 0.07 (γ = 1.66 ±
1.4 for three devices) and for PBDTTT-EFT:Ph2a is γ = 2.37 ± 0.08 (γ = 1.59 ± 0.64 for three
devices). Note that the magnitude of SI increases for each OPV system under illumination,
which likely reflects the increased carrier density in comparison to the dark condition. The
presence of more carriers is expected to fill trap states in the OPV BHJ film while also
increasing scattering,[127–129] raising the overall noise level. A similar trend was observed
previously in PCPDTBT:PC71BM OPVs.[90] An increase in SI is also observed in silicon
photodiodes under illumination.[69] It is especially likely for noise to increase under
illumination in OPVs given the high degree of structural disorder present in these devices.[130]
In contrast to the LFN behavior in the dark, the reverse bias values of β under illumination
become comparable for both of the present OPV systems. This behavior indicates that both
systems give rise to a more similar densities-of-states under illumination.[55] Furthermore, the
illuminated forward bias noise spectral density versus frequency spectra show similar
behavior to the dark spectra, particularly flattening at frequencies exceeding 10 Hz, which
cannot be assigned to either thermal or shot noise. Therefore, similar to the dark data, this
flattening may be similarly arising from a generation-recombination noise source.
19
SI under illumination is plotted as a function of voltage in Figure 7c for PBDTTT-
EFT:PC71BM and in Figure 7d for PBDTTT-EFT–Ph2a. In sharp contrast to the dark data, the
light SI versus voltage data are nearly independent of applied bias. SI for PBDTTT-EFT:Ph2a
is on the order of ~10-14 A2/Hz and for PBDTTT-EFT:PC71BM SI is on the order of ~10-15
A2/Hz over the bias range measured. Note that the higher SI values for PBDTTT-EFT:Ph2a
correlate with its lower PCE. The invariance in SI as a function of voltage suggests that the
noise induced by the photocurrent dominates the noise spectral density. Under illumination,
the device current values are more constant over the bias window measured, which could
account for the noise invariance at varying biases. Moreover, the current magnitudes in
PBDTTT-EFT:PC71BM and PBDTTT-EFT:Ph2a are more comparable under illumination,
which partly explains similar values of SI in contrast to the dark SI data. The measured SI
converges to similar values in the dark and under illumination at higher forward biases, where
the current magnitudes become comparable. The recombination resistance, chemical
capacitance, and charge carrier lifetimes extracted from impedance measurements were also
more comparable under illumination than in the dark. Therefore, both LFN and impedance
measurements under illumination show that the presence of photo-generated carriers governs
the spectral response. This observation is not surprising since illumination dominates the
current-voltage response of a solar cell, particularly below the turn-on voltage.
3. Conclusions
In this work, BHJ OPV device performance, charge transport, and current fluctuations
have been quantified in devices utilizing a conventional fullerene acceptor and an emerging
dimeric PDI acceptor. Standard current-voltage characterization reveals that PDI-based OPV
performance is somewhat lower than devices using conventional fullerenes. These results are
then correlated with low-frequency noise measurements in the dark, which reveal a narrower
density-of-states profile in the non-fullerene acceptor OPVs. This result implies that a greater
20
degree of recombination, and thus disorder, is present in the non-fullerene OPVs. Furthermore,
the elucidation of charge carrier lifetimes from impedance measurements enable the dark
noise data to be fit to the Kleinpenning model for the first time. Measurements under
illumination reveal increased noise spectral density relative to the dark, by approximately four
orders of magnitude for fullerene-based OPVs and three orders of magnitude for PDI-based
OPVs. Furthermore, an inverse correlation is found between noise spectral density and solar
cell efficiency. Overall, this work establishes that in-situ correlated LFN and impedance
spectroscopy are powerful analytical tools that can offer physical insight into OPV function
beyond standard current-voltage characterization, and have the potential to serve as cost-
effective, non-destructive methods to correlate structure-performance relationships, which
could guide the optimization of emerging photovoltaic materials.
4. Experimental Section
4.1. Substrate Cleaning
Patterned indium tin oxide (ITO, 20 Ω sq-1) on glass was procured from Thin Film
Devices, Inc. The substrates were sonicated at 50 ºC in aqueous detergent for 30 min, and
then for 20 min in deionized water, methanol, isopropanol, and acetone baths in succession. If
stored (in ambient) prior to use, the ITO substrates were sonicated at 50 ºC for 10 min
successively in methanol, isopropanol, and acetone immediately preceding device fabrication.
Finally, the ITO substrates were exposed to a 5 min air plasma treatment at 18 W under rough
vacuum (~300 mTorr).
4.2. Zinc Oxide Film Deposition
A ~0.50 M zinc oxide (ZnO) sol gel solution was produced by combining 220 mg of
zinc acetate dihydrate (Zn(CH3COO)2•2H2O), 99.999%, Sigma-Aldrich), 62 mg of
ethanolamine (NH2CH2CH2OH, 99%, Sigma-Aldrich), and 2 mL of 2-methoxyethanol
(CH3O-CH2CH2OH, anhydrous, 99.8%, Sigma-Aldrich).[71] This solution was sonicated for
21
approximately 5 min at ambient temperature until the solids were visibly dissolved and aged
overnight. Then, the ZnO sol gel solution was filtered through a 0.45 µm polyvinylidene
difluoride (PVDF) filter and spun-cast at 7000 RPM for 30 sec. Following spin-casting,
substrates were promptly placed on a hot plate at 170 ºC and annealed for 10 min. The ZnO
substrates were immediately transferred to an argon-filled glovebox after annealing.
4.3. Active Layer Deposition
A poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b;4,5-b/]dithiophene-2,6-diyl-
alt-(4-(2-ethylhexyl)-3-fluorothieno[3,4-b]thiophene-)-2-carboxylate-2-6-diyl)]
(PBDTTT-
EFT, 1-Material)–[6,6]-phenyl-C71-butryic acid methyl ester (PC71BM, American Dye Source,
Inc.) solution was prepared by dissolving PBDTTT-EFT (13 mg/mL) and PC71BM (26
mg/mL) powder in a solution of dichlorobenzene:1,6-di-iodohexane (97.5:2.5 vol%) with a
total loading of 39 mg/mL. This solution was stirred overnight on a hot plate at 75 ºC in an
argon-filled glovebox prior to use. Next, 20 µL of the PBDTTT-EFT:PC71BM solution was
dispensed onto a ZnO substrate, which was then spun cast at 1700 RPM for 20 sec. These
samples were placed in covered Petri dishes for approximately 1.5 hours.
A PBDTTT-EFT–[1,2:3,4]-bis-[N,N′-bis-perylenediimide-1,12-yl]-benzene
(Ph2a)
solution was prepared by dissolving PBDTTT-EFT (4 mg/mL) and Ph2a (6 mg/mL) in a
solution of chloroform:diphenyl ether (99:1 vol%) with a total loading of 10 mg/mL. The
synthesis of Ph2a is described elsewhere.[31] This solution was stirred overnight on a hot plate
at 75 ºC in an argon-filled glovebox prior to use. Next, the PBDTTT-EFT:Ph2a active layer
films were prepared by dispensing 20 µL of solution onto an already-spinning substrate (1500
RPM, 30 sec). Film thicknesses were measured with profilometry (Dektak 150 Stylus Surface
Profiler). Reported film thicknesses are an average of five measurements.
4.4. Contact Deposition
Portions of the substrate were etched with a dry cotton swab following active layer
spin casting to define an area for a cathode bus bar on each substrate. Subsequently, the
22
substrates were placed in a glovebox-enclosed thermal evaporator. A shadow mask was
placed on the substrates to define a cathode bus bar and anode contact such that there were
four 0.06 cm2 devices per substrate. Next, the chamber was pumped down to ~5 x 10-6 Torr.
Then, MoO3 (Puratronic, 99.9995%) and silver (W. E. Mowrey, 99.99%) were iteratively
deposited without breaking vacuum at respective deposition rates of ~0.2 Å s-1 and 1.5-2 Å s-1.
After removal from the vacuum chamber, samples were encapsulated in a UV chamber
(Electro-Lite) using glass slides and UV-curable ELC-2500 epoxy prior to removal from the
glovebox.
4.5. Solar Cell Evaluation
A solar cell analyzer (Class A Spectra-Nova Technologies), equipped with a xenon arc
lamp and AM1.5G filter, was used to collect current-voltage data in the dark and at 1 sun
illumination. Calibration with a monocrystalline silicon diode fitted with a KG3 filter brought
spectral mismatch close to unity. A Newport Oriel® Quantum Efficiency Measurement Kit
recorded external quantum efficiency (EQE) data. The EQE data were integrated against the
solar spectrum using the Open Photovoltaics Analysis Platform program,[131] which was used
to correct the short-circuit current density values measured by the solar simulator
(additionally the EQE-derived short-circuit current density values were within <10% of the
values measured by the solar simulator). Dark diode data were also collected and analyzed
within the Shockley p-n junction diode model using the web-enabled tool "PV Analyzer."[72]
4.6. Impedance Spectroscopy
Impedance spectroscopy measurements were conducted using a Solartron Model
1260A impedance/gain phase analyzer. The sample impedance was measured over a
frequency range of 1 Hz to 1 MHz, and the oscillation amplitude did not exceed 50 mV.
Impedance spectra were recorded in the dark and under AM1.5G 1 sun illumination using a
solar simulator (Newport).
4.7. Low-Frequency Noise Measurements
23
Low-frequency noise measurements were conducted using a low noise current pre-
amplifier (1212 DL Instruments) and a spectrum analyzer (Stanford Research Systems,
SR760). A Keithley 2400 source-measurement unit was employed to bias devices during
noise measurements and to concurrently measure device current.[93,132] Comparative noise
measurements performed with a DC battery revealed no additional noise from instrumentation
in the conditions used in this study. Additionally, a solar simulator (Newport, Inc.) was used
to expose the samples to AM1.5G 1 sun illumination to conduct low-frequency noise
measurements under simulated sunlight, and to collect current-voltage curves in the dark and
light to adjust the sensitivity on the current pre-amplifier accordingly.
Supporting Information
Supporting Information is available from the Wiley Online Library or from the author.
Acknowledgements
This work was supported as part of the Argonne-Northwestern Solar Energy Research
(ANSER) Center, an Energy Frontier Research Center funded by the U. S. Department of
Energy, Office of Science, Basic Energy Sciences under Award No. DE-SC0001059. The
Institute for Sustainability and Energy at Northwestern (ISEN) provided partial equipment
funding. K.A.L. acknowledges a graduate research fellowship from the National Science
Foundation. H.N.A. acknowledges support from a NASA Space Technology Research
Fellowship (NSTRF, #NNX11AM87H). This work made use of the Keck-II facility of the
NUANCE Center at Northwestern University, which has received support from the Soft and
Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205); the NSF-
MRSEC program (NSF DMR-1121262); the International Institute for Nanotechnology (IIN);
the Keck Foundation; and the State of Illinois. We also thank N. D. Eastham and Prof. A. S.
Dudnik for helpful discussions.
Received: ((will be filled in by the editorial staff))
Revised: ((will be filled in by the editorial staff))
Published online: ((will be filled in by the editorial staff))
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Figure 1. (a) Chemical structures of PBDTTT-EFT, PC71BM, and Ph2a. (b) Inverted organic
photovoltaic (OPV) device architecture. (c) Representative dark current-voltage data for
PBDTTT-EFT:PC71BM and PBDTTT-EFT:Ph2a solar cells. (d) Representative illuminated
current-voltage data for PBDTTT-EFT:PC71BM and PBDTTT-EFT:Ph2a solar cells.
30
Figure 2. (a) Impedance response of a PBDTTT-EFT:PC71BM solar cell for different biases
in the dark. (b) Impedance response of a PBDTTT-EFT:Ph2a solar cell for different biases in
the dark. (c) Equivalent circuit model for dark PBDTTT-EFT:PC71BM and PBDTTT-
EFT:Ph2a OPV impedance data (Rs – series resistance, Rbulk – bulk resistance, Cgeo –
geometrical capacitance, Rrec – recombination resistance, CPE – constant phase element
representing chemical capacitance).
31
Figure 3. (a) Bulk resistance (Rbulk) and geometrical capacitance (Cgeo) impedance circuit
elements in the dark for a PBDTTT-EFT:PC71BM OPV. (b) Bulk resistance (Rbulk) and
geometrical capacitance (Cgeo) impedance circuit elements in the dark for a PBDTTT-
EFT:Ph2a OPV. (c) Recombination resistance (Rrec) and chemical capacitance (Cµ) of a
PBDTTT-EFT:PC71BM OPV in the dark at varied sample bias. The line is a power law fit to
the chemical capacitance data. (d) Recombination resistance (Rrec) and chemical capacitance
(Cµ) of a PBDTTT-EFT:Ph2a OPV in the dark under varied sample bias. (e) Average charge
carrier lifetime () of a PBDTTT-EFT:PC71BM OPV in the dark at varied sample bias. The
line is an exponential fit to the data. (f) Average charge carrier lifetime () of a PBDTTT-
EFT:Ph2a OPV in the dark at varied sample bias. The line is an exponential fit to the data.
32
Figure 4. (a) Noise spectral density (SI) versus frequency of a PBDTTT-EFT:PC71BM solar
cell in the dark, showing 1/fβ behavior at V = -1.00 V with β = 1.02 ± 0.005 and a 1/fβ noise
spectrum at V = 0.90 V for f < 10 Hz with β = 1.21 ± 0.05. (b) Noise spectral density (SI)
versus frequency of a PBDTTT-EFT:Ph2a OPV in the dark, showing 1/fβ behavior at V = -
1.00 V with β = 1.36 ± 0.015 and a 1/fβ spectrum at V = 0.90 V for f < 10 Hz with β = 1.25 ±
0.05. (c) Noise spectral density (SI) at f = 2 Hz versus voltage of a PBDTTT-EFT:PC71BM
OPV in the dark. The lines are fit to the Kleinpenning model (eq. 3) under forward bias. (d)
Noise spectral density (SI) at f = 2 Hz versus voltage of a PBDTTT-EFT:Ph2a OPV in the
dark. The lines are fit to the Kleinpenning model (eq. 3) under forward bias.
33
Figure 5. (a) Impedance response of a PBDTTT-EFT:PC71BM solar cell under 1 sun
illumination. (b) Impedance response of a PBDTTT-EFT:Ph2a solar cell under 1 sun
illumination. (c) Equivalent circuit model for illuminated PBDTTT-EFT:PC71BM and
PBDTTT-EFT:Ph2a OPV impedance data (Rs – series resistance, Rrec – recombination
resistance, Cµ – chemical capacitance).
34
Figure 6. (a) Recombination resistance (Rrec) and chemical capacitance (Cµ) of a PBDTTT-
EFT:PC71BM OPV under 1 sun illumination at varying sample bias. The line is a power law
fit to the chemical capacitance data. (b) Recombination resistance (Rrec) and chemical
capacitance (Cµ) of a PBDTTT-EFT:Ph2a OPV under 1 sun illumination under varying
sample bias. The line is a power law fit to the chemical capacitance data. (c) Average charge
carrier lifetime () of a PBDTTT-EFT:PC71BM OPV under 1 sun illumination at different
sample biases. (d) Average charge carrier lifetime () of a PBDTTT-EFT:Ph2a OPV in the
dark at different sample bias.
35
Figure 7. Noise spectral density (SI) versus frequency of a PBDTTT-EFT:PC71BM solar cell
under 1 sun illumination, showing 1/fβ behavior at V = -1.00 V with β = 1.05 ± 0.01 and a
~1/fβ noise spectrum at V = 1.00 V for f < 10 Hz with β = 1.50 ± 0.07. (b) Noise spectral
density (SI) versus frequency of a PBDTTT-EFT:Ph2a solar cell under 1 sun illumination,
showing 1/fβ behavior at V = -1.00 V with β = 1.08 ± 0.006 and a ~1/fβ noise spectrum at V =
1.00 V for f < 10 Hz with β = 1.47 ± 0.06. (c) Noise spectral density (SI) at f = 2 Hz versus
voltage of a PBDTTT-EFT:PC71BM solar cell under 1 sun illumination. (d) Noise spectral
density (SI) at f = 2 Hz versus voltage of a PBDTTT-EFT:Ph2a solar cell under 1 sun
illumination.
36
TABLE OF CONTENTS
Low-frequency electronic noise is measured in polymer solar cells with fullerene and non-
fullerene acceptors. Charge carrier lifetimes deduced from impedance spectroscopy enable the
noise data to be fit to the Kleinpenning model. The results establish that low-frequency noise
elucidates charge recombination processes that limit power conversion efficiency. This
correlated analytical tool provides quantitative guidance to the optimization of emerging
photovoltaic materials.
Keywords:
1/f noise, organic photovoltaic, PBDTTT-EFT, PC71BM, alternate acceptor
Kyle A. Luck, Vinod K. Sangwan, Patrick E. Hartnett, Heather N. Arnold, Michael R.
Wasielewski, Tobin J. Marks, and Mark C. Hersam*
Correlated In-Situ Low-Frequency Noise and Impedance Spectroscopy Reveal
Recombination Dynamics in Organic Solar Cells using Fullerene and Non-Fullerene
Acceptors
37
|
1803.07135 | 1 | 1803 | 2018-02-26T22:02:18 | Fast Micron-Scale 3D Printing with a Resonant-Scanning Two-Photon Microscope | [
"physics.app-ph",
"physics.ins-det",
"physics.optics"
] | 3D printing allows rapid fabrication of complex objects from digital designs. One 3D-printing process, direct laser writing, polymerises a light-sensitive material by steering a focused laser beam through the shape of the object to be created. The highest-resolution direct laser writing systems use a femtosecond laser to effect two-photon polymerisation. The focal (polymerisation) point is steered over the shape of the desired object with mechanised stages or galvanometer-controlled mirrors. Here we report a new high-resolution direct laser writing system that employs a resonant mirror scanner to achieve a significant increase in printing speed over galvanometer- or piezo-based methods while maintaining resolution on the order of a micron. This printer is based on a software modification to a commerically available resonant-scanning two-photon microscope. We demonstrate the complete process chain from hardware configuration and control software to the printing of objects of approximately $400\times 400\times 350\;\mu$m, and validate performance with objective benchmarks. Released under an open-source license, this work makes micro-scale 3D printing available the large community of two-photon microscope users, and paves the way toward widespread availability of precision-printed devices. | physics.app-ph | physics |
Fast Micron-Scale 3D Printing with a
Resonant-Scanning Two-Photon Microscope
Benjamin W. Pearre (1),
Christos Michas (2),
Jean-Marc Tsang (2),
Timothy J. Gardner (1,2),
Timothy M. Otchy (1)
((1) Dept of Biology, Boston University, Boston, MA, USA,
(2) Dept of Biomedical Engineering, Boston University, Boston, MA, USA)
Abstract
3D printing allows rapid fabrication of complex objects from digital
designs. One 3D-printing process, direct laser writing, polymerises a light-
sensitive material by steering a focused laser beam through the shape of
the object to be created. The highest-resolution direct laser writing sys-
tems use a femtosecond laser to effect two-photon polymerisation. The
focal (polymerisation) point is steered over the shape of the desired ob-
ject with mechanised stages or galvanometer-controlled mirrors. Here we
report a new high-resolution direct laser writing system that employs a
resonant mirror scanner to achieve a significant increase in printing speed
over galvanometer- or piezo-based methods while maintaining resolution
on the order of a micron. This printer is based on a software modifi-
cation to a commerically available resonant-scanning two-photon micro-
scope. We demonstrate the complete process chain from hardware config-
uration and control software to the printing of objects of approximately
400× 400× 350 µm, and validate performance with objective benchmarks.
Released under an open-source license, this work makes micro-scale 3D
printing available the large community of two-photon microscope users,
and paves the way toward widespread availability of precision-printed de-
vices.
Comments: Corresponding author: BWP ([email protected]). TJG and TMO
contributed equally to this work.
Conflict-of-Interest statement: TJG is an employee of Neuralink Inc.
Keywords: 3d printing, additive manufacturing, lithography, direct laser writ-
ing, DLW, two-photon microscopy, resonant scanning.
1
1
Introduction
Direct laser writing (DLW) lithography [Maruo et al., 1997] is a 3D-printing
technology that can be used to fabricate small-scale objects with complex ge-
ometries by programmatically exposing a light-sensitive material to a focused
laser beam [Atwater et al., 2011, Buckmann et al., 2012, Cumpston et al., 1999,
Farsari and Chichkov, 2009, Gissibl et al., 2016b]. Using femtosecond laser
pulses and two-photon polymerisation processes to write a solid object struc-
ture into a photoresist, DLW enables on-demand fabrication of complex 3D ob-
jects with micron-scale features [Gissibl et al., 2016a, Malinauskas et al., 2010,
2013, Niesler and Tanguy, 2016, Farsari and Chichkov, 2009, Kabouraki et al.,
2015, Gattass and Mazur, 2008, Sun and Kawata, 2004, Skylar-Scott et al.,
2017, Gottmann, 2009]. While DLW achieves diffraction-limited resolution, the
printing speed of DLW is slow, practically limiting the size of printed objects
to millimetres. This speed limitation is changing rapidly, with a number of
advancements reported. The slowest DLW printers use piezo stages, at speeds
ranging from ∼ 0.1–30 millimetres per second [Straub and Gu, 2002, Ovsianikov
et al., 2011]. Galvanometer-based printers can bring the laser scan rate up to
tens or hundreds of mm/s [Thiel et al., 2010, Maruo and Ikuta, 2000, Farsari
et al., 2006, Obata et al., 2013, Gottmann, 2009]. Recent reports include raster-
scanned printing with high-speed galvanometers that achieve up to 400 mm/s
[Skylar-Scott et al., 2016] by operating the scan mirror near its resonant fre-
quency. Here we extent this trend by incorporating a resonant mirror operating
at 8 kHz, which allows printing at speeds up to ∼ 8000 mm/s.
In order to increase not only the speed of this technology but also its flexibil-
ity and availability, we present a raster-scanning DLW (rDLW) system built on
a standard resonant-scanning two-photon microscope and open-source control
software that are common equipment in many physical and life science laborato-
ries. Open design and standard commercial components offer easy modification
and adaptation to accomodate new materials, object sizes, and techniques.
We demonstrate the capabilities of our resonant rDLW printer in the fab-
rication of micron-scale objects. The instantiation reported here is capable of
fabricating objects that are up to ∼ 400 × 400 × 350 µm with minimum feature
sizes of ∼ 4×1×2 µm (X, Y, and Z, respectively), and with finer X-axis features
available through the use of the microscope's zoom. (We note that much larger
objects may be constructed by stitching together overlapping pieces of this size,
although a full discussion of this topic is beyond the scope of this work.) We
show that the use of a resonant scanner allows our system to print an object of
this size and arbitrary geometric complexity in about 20 seconds-a significant
increase in printing speed over fast galvanometer-based systems. We evaluate
performance with objective metrics assessed using IP-Dip (Nanoscribe, GmbH),
a proprietary refraction-index–matched resist developed specifically for rapid,
high-resolution DLW, although we expect that a wide variety of photoresists
may be used.
Finally, we release our application software under an open-source license.
Taken together, this work provides a new platform for innovation in DLW and
2
Figure 1: Overview of the resonant rDLW printer. (a) Schematic of the optical path
from laser source to printed object. (b) The raster scanner rapidly sweeps the laser
focus across the X axis of the printing workspace. (c) Top: laser power is modulated
above (red line) and below (grey dotted line) the polymerisation threshold (green
dashed line) throughout the X-axis sweep. Bottom: by applying this pattern of laser
modulation across the workspace, solid features can be built up line by line and layer
by layer. (d) SEM micrograph of a Charles Darwin statuette printed with our rDLW
printer.
makes this technology more easily accessible to the community of two-photon
microscope users.
2 Results
The rDLW system we report fabricates objects by raster-scanning the focal
point of a femtosecond laser through a volume of photoresist, defining the ob-
ject structure line by line. The device schematic in Fig. 1a depicts the hardware
configuration tested and reported here-essentially, a standard two-photon mi-
croscope with a resonant raster scanner and high-speed/high-extinction-ratio
laser power modulator. This schematic need not be taken as prescriptive, as
one of the benefits to having an open system is the ability to modify compo-
nents to meet the requirements of new applications.
2.1 A 3D printer built on a two-photon microscope
Our printer was built around a commercial two-photon microscope platform. A
resonant+galvanometer scan module controls the laser's X-Y focal point within
the printable workspace. (Throughout the manuscript, we use Cartesian coordi-
nates to refer to directions and dimensions in the printing workspace. Following
3
this nomenclature, X and Y are the perpendicular axes spanning a single focal
plane of the orthogonal Z direction. In keeping with this, X denotes the direc-
tion of the high-speed (7.91 kHz) raster scanner's sweeps, and Y identifies the
slow galvanometer-controlled row index (Fig. 1b)). An immersion objective lens
(25× magnification; numerical aperture (NA) of 0.8) with a refraction compen-
sation ring was used for both printing and imaging. A piezo scanner enabled
fast, precise Z-axis positioning of the objective lens (and hence the focal plane)
during printing. A photomultiplier camera allowed imaging of the workspace
and printed objects.
A tunable Ti-Sapphire laser system (∼120 fs pulse duration, 80 MHz repe-
tition) provided the light for both polymerisation and visualisation of the pho-
toresist and printed objects. We used pump laser powers in the range of 6–10 W,
resulting in a ∼600–1000-mW mode-locked output beam at the polymerisation
half-wavelength (tunable, but typically 780 nm). Beam intensity was modulated
by a Pockels cell (ConOptics 350-80 cell and 302RM voltage amplifier) inter-
faced with a 3.33-MHz DAC (we note that this Pockels cell and driver are not
rated for 3-MHz use, but the nonlinearity of the polymerisation reaction allows
us to control printing voxelisation at a frequency higher than that for which
the Pockels cell is rated. Nonetheless, we recommend that users work with a
faster Pockels cell and driver in order to improve small-feature accuracy). Laser
intensity was continuously monitored by sampling the passing beam. To flatten
the profile and improve collimation, the beam was routed through a 2× Galilean
beam expander before entering the microscopy optics (Fig. 1a).
All components were interfaced with the control computer via a dedicated
data acquisition system. Vibration due to floor movements was minimised by
building the rDLW system on an air-shock isolation table.
2.2 PrintImage: a resonant-rDLW control application
Because the printer is built on a two-photon microscope, we chose to use a popu-
lar open-source microscopy software package, ScanImage (Vidrio Technologies;
Version ≥ 5.2.3) [Pologruto et al., 2003], as the basis for system control. To
implement printer functionality, we developed a custom MATLAB application,
PrintImage, that runs alongside ScanImage to control print object voxelisation,
calculate the laser power modulation sequence, and manage the printing-specific
parts of the imaging process.
Print objects may be designed using any computer-aided-design or engineer-
ing (CAD/CAE) software capable of exporting Stereolithography (STL) files.
STL files, which define the unstructured triangulated surface of the object by
the unit normal and vertices of the triangles using a 3D Cartesian coordinate
system, are transformed into a "watertight" solid object of specific dimensions
that is mapped onto the predefined set of printer positions via a mesh vox-
elisation routine. Voxel Y and Z positions are determined by the number of
scan lines and vertical slices specified by the user; X positions are computed as
described below.
Once the object is voxelised, the series of filled and empty voxels along the
4
X direction of each Y row (blue arrows, Fig. 1b) is converted into a vector of
supra- and sub-polymerisation-threshold laser powers (Fig. 1c) that defines the
geometry (for each Y row) of the printed object. Repeating this translation for
each Y row in every Z plane, the required laser power at every point within
the printer's workspace is computed before the volume print scan is initiated.
Power correction factors (see below) are applied to compensate for variable
beam speed, spherical aberrations in the objective lens, or other nonuniformities.
During printing, ScanImage executes a volume scan (as is typically performed
for volumetric two-photon calcium imaging) using the laser power sequence
precomputed by PrintImage (Fig. 1c), thus creating the printed object (Fig. 1d).
2.3 Calibration
To achieve maximum precision, calibration of imaging and printing parameters
is necessary. We accomplish this by calibrating ScanImage's optical workspace
size parameters, using two methods: (1) producing fluorescent objects of known
dimensions and imaging them with the rDLW printer, and (2) printing objects
with the rDLW printer and measuring them on a calibrated device.
To create objects of precisely known dimensions, we used a commercial DLW
printer to print rulers with IP-Dip photoresist (Fig. 2a; see Methods), and
confirmed the dimensions of the rulers with SEM micrographs (the 10-µm ruler
tics measured 9.93 µm with a SEM two-pixel error ±0.25 µm). We imaged
these rulers with our rDLW printer and adjusted ScanImage's optical scaling
parameters accordingly. We note that fluorescent rulers may be created without
a calibrated DLW system [Khan and Brumberg, 2014].
To calibrate the X-Y plane, we printed calibration cubes (Fig. 2b) and a
calibration ruler (Fig. 2c) with the rDLW printer, measured with SEM mi-
crographs the discrepancy between desired and actual object dimensions, and
adjusted ScanImage's workspace size parameters to null the difference. Cali-
brating the Z print scale required printing a vertical calibration ruler (Fig. 2d)
with regularly spaced Z planes that could be precisely measured using an optical
surface profiler.
As the resonant scanner sweeps the laser's focal point back and forth across
the X axis of the printer's workspace, the beam moves through the photoresist
with sinusoidally varying velocity (Fig. 3a). If we define the centre of the sweep
as t = 0, the oscillation frequency as Fr, and the maximum beam excursion as ξ,
the focal point's position x at time t is given by x = ξ sin(2πtFr) (Fig. 3b, blue
line). Beam velocity, δx/δt, rapidly approaches zero at the sweep extremes, so
ScanImage restricts the usable portion of the raster scan to a central fraction,
D, of the scan line, resulting in a printing workspace of width 2ξD. From
the equation above, one sweep from −ξ to ξ will take time t = 1/(2Fr), so
the beam will traverse the subsection spanning D in t = 2 arcsin(D)/(2πFr).
If laser power (controlled by the Pockels cell) has a modulation frequency of
Fp, then power can be updated every 1/Fp seconds; this update rate enables
rx = 2Fp arcsin(D)/(2πFr) potential changes in laser power level (i.e., printing
voxels) during a single X-axis scan. In our instantiation, the resonant scanner
5
Figure 2: Rulers for calibrating the rDLW system. (a) Ruler for measuring X- and
Y-workspace dimensions. (b) Cubes used to calibrate object size and uniformity of
power delivery. The cubes shown have widths 300, 200, and 100 µm. The printing
parameters were 2.2× (i.e., 302 × 302 µm FOV), 3.3× and 6.6× magnification (zoom),
respectively. Each X-Y plane was built with 152×1024 voxels, and the vertical spacing
between the planes was 0.5 µm for all three cubes. (c) Ruler for Y-axis calibration.
The printing parameters are the same as for the 300-µm cube in (b). The horizontal
line spacing on the ruler is 5 µm. (d) Vertical ruler for Z-axis calibration. Each row
along the X axis contains 11 steps with 1-µm height difference. Adjacent steps along
the Y axis have 10-µm height difference. The total height of the ruler is 300 µm. The
printing parameters were the same as for the 300-µm cube in (b).
6
frequency (Fr ≈ 8 kHz), the Pockels cell update rate (Fp ≈ 3.33 MHz), and
ScanImage's workspace restriction (D = 0.9), result in a maximum of 152 print
voxels along the X axis.
Resonant-scanner–based control results in higher resolution near the edges
of its sweep than in the centre, but allows higher resolution as workspace size
decreases. For example, on our rDLW system, printing at 1.3× zoom yields a
512×512-µm X-Y workspace. On the X axis, voxels are spaced on average every
V /rx for a workspace of span V , so at this zoom our rDLW printer is expected
to have a 3.4-µm mean voxel size along the X axis. At 2.6× zoom, the mean
voxel size along X is expected to be 1.7 µm over the 256 × 256-µm workspace.
The use of a resonant scanner leads to significant variation about this mean,
since laser power can be changed only at locations specified by the position
function (ξ sin(2πtFr); Fig. 3b, black ticks) at a frequency equal to the laser
power modulation rate, Fp. Thus, actual voxel size should be nonuniform across
the X axis, with smaller voxels at the edges of the workspace than near the
center, proportional to cos(arcsin x) for x ∈ [−Dξ . . . Dξ] scaled and centred
over V . As zoom level reduces workspace size V , expected voxel sizes over the X
axis decrease linearly until they become limited by optics or photon wavelength
(see Section 2.6).
2.4 Varying the laser power to ensure uniform printing
Given sinusoidally varying scan velocity (Fig. 3a) and constant laser power at the
focal point, the photoresist will experience different light exposure conditions
as the beam accelerates from the start of a raster line until it reaches peak
velocity at the centre of the sweep and then deccelerates as it approaches the
end of a line. Under these conditions, the photoresist will not polymerise evenly,
and may vaporise or boil in overexposed regions. Thus the baseline power of
the polymerising laser must be corrected by a factor of cos(t) = cos(arcsin x)-
proportional to the focal point's speed-to maintain constant exposure.
Another source of variability in the laser energy available for polymerisation
is attenuation of the beam due to inhomogenieties in laser intensity over the
workspace. This may be due to vignetting, which attenuates laser power to-
ward the edges of the workspace, or to other effects such as those resulting from
imperfect alignment of optical components. Falloff due to vignetting is complex,
depending on the angles at which the laser enters and exits each lens in the sys-
tem, relative alignments of all optical components, the shape of the laser beam,
partial occlusions throughout the optical path, and possibly attenuation of the
laser beam (although this should be minimal in its near field). Furthermore,
some of these factors may change frequently in a developing multipurpose tool
such as a two-photon microscope in a research setting.
Due to the difficulty of modeling these factors precisely, we use a simple
adaptive approach to compensate for nonuniform optical fields. Given a model
M = f : x, y → falloff, power may may be boosted by 1/M to compensate.
The liquid photoresist used in these assays (IP-Dip) fluoresces when exposed to
390-nm light (i.e., two near-simultaneous 780-nm photons), and its refractive
7
Figure 3: Sinusoidal laser velocity over the X axis results in nonuniform voxel size.
Both that and optical nonuniformities such as vignetting require corrective laser power
compensation. (a) Laser focal point velocity as the resonant scanner sweeps across
the X axis. (b) Laser focus position varies sinusoidally with time (blue line). The
active scanning region is restricted to a portion D of the sweep, with X-axis voxel
positions shown as black horizontal dashes. For clarity, we show where voxels would
be defined for an 8-kHz resonant scanner with a 1-MHz control system, which yields
only 45 voxels. In order to maintain uniform energy deposition across the workspace,
laser power is modulated by two factors:
it is scaled along the X axis by the focal
point's speed cos(t), and along the X-Y plane by a learned model of the inverse of
optical darkening due to polymerisation. (c) Cross-section of the power compensation
along X, in which y = 0, x ∈ [−208, 208] µm (1.6× zoom on our rDLW system).
(d–g) 400 × 400 × 100-µm bricks used to measure and calibrate energy deposition.
The upper image shows the print power mask over the 208 × 208-µm workspace; the
middle image shows an actual printed object (normalised using a baseline fluorescence
image); and the bottom image shows brightness data gathered by sweeping the object
over the lens so that the same set of pixels in the imaging system may be used for each
measurement in order to bypass optical nonuniformities therein. Shown: (d) constant
power (note that (1) at this zoom optical vignetting comes close to compensating for
X-axis nonuniformity due to varying beam speed; and (2) this image was printed at
lower nominal power than the others in order to avoid boiling; for the other images,
the speed compensation appropriately reduces power); (e) only (X-sinusoidal) speed
power compensation; (f–g) two iterations of adaptive power compensation over the
visual field (see text). The images and data were obtained with ScanImage on our
rDLW system.
8
index and transparency are functions of the degree of polymerisation. Thus M
may be approximated by measuring the reduction in fluorescence of polymerised
photoresist over a uniform printed object (Methods). From these data we fit a
curve such that falloff at any point may be interpolated (in Fig. 3 we use fourth-
order polynomials in X and Y, although other functions may also be suitable).
Due to the nonlinear relationships between applied laser power and degree of
polymerisation [Mueller et al., 2014, Sun et al., 2003] and between degree of
polymerisation and reduced fluorescence of the polymerised photoresist, this
will not yield a perfect compensation model in one step, so the process may be
iterated until sufficiently uniform energy deposition is achieved (Fig. 3f–g).
We assayed the uniformity of energy deposition across the workspace by
printing 400×400×100-µm solid bricks and measuring the fluorescence variation
across the printed objects (Fig. 3d–g) (see Methods). Simple beam speed power
compensation-i.e., reducing power at the extrema of the X axis where the beam
moves more slowly-was effective for producing even power deposition over small
objects, but resulted in nonuniformities at (cid:46) 2.5× zoom: the extreme edges of
the X axis fluoresced more brightly than at the centre, indicating a lower degree
of polymerisation. A compensation function fitted to the measured fluorescence
variation increased the power at both the X and Y extrema, compensating
for vignetting and other optical irregularities and resulting in nearly uniform
polymerisation.
These two forms of power compensation-for focal-point speed and for opti-
cal inhomogenieties-are important for uniform printing, but beyond that they
demonstrate the ease with which polymerisation may be arbitrarily controlled
on a per-voxel basis throughout printed objects, potentially allowing for easy
development of techniques that take advantage of nonuniform polymerisation.
2.5 Accuracy
We estimated the accuracy of our rDLW system by printing simple geometric
shapes (Fig. 2b–d) and comparing the final object dimensions with those of the
original print model (measured with SEM micrographs for X and Y, and the
surface profiler for Z). We found that print errors were not identical across the
three dimensions, but instead varied by the print axis. Given that the laser
focal position in 3D space is controlled by three distinct mechanisms (X axis:
resonant scanning mirror; Y axis: galvanometer mirror; Z axis: piezo objective
scanner), and that size is calibrated independently for each dimension, this is
expected. For 300 × 300-µm cubes printed at 2.2× zoom, we found the errors
in the size of the cube to be -5.6 ± 1.2 µm (−1.9 ± 0.4%) on the X axis and
6.5 ± 1.0 µm (2.2 ± 0.33%) on the Y axis (±x indicates SEM pixel size x/2).
Z-axis accuracy was measured using the staircase ruler shown in Fig. 2d. Since
our printing process leads to small variations (a few microns) in the starting
height of the print, we measured Z accuracy at each step of the staircase (we
leave more accurate automatic detection of substrate height for future work).
The steps had a nominal height of 10 µm, and an actual mean height of 10.0316
µm-an error of ∼ 0.32%, well within the surface profiler's claimed accuracy of
9
Figure 4: Complex geometric objects printed with our rDLW printer. (a-c) Woodpile
structure with design dimensions 60 × 60 × 60 µm. Along the X axis, bar thickness
was 2 voxels (0.8 µm) and bar spacing 4 voxels (1.6 µm). Bar thickness and spacing
on the Y axis were 13 and 26 voxels respectively in order to be the same size as the
X-axis beams, and on the Z axis bars are 1 voxel thick with 6-µm spacing. The focal
plane resolution was 152 × 1024 voxels, and the focal plane (Z) spacing was 0.2 µm.
(d) A torus knot design printed at 100× 100× 150 µm (top right) and 50× 50× 75 µm
(bottom left). The inset shows details within the circumscribed region of the bottom
left structure. Both knots were printed with focal plane resolution 152 × 512 voxels
and focal plane spacing 0.2 µm.
< 0.75%.
All measurements were made following immersion of the printed objects in
solvent to remove excess/unpolymerised resist (see Methods), and thus our es-
timates from SEM micrographs include some degree of post-processing–related
object shrinkage. Achieving maximum printing accuracy-with this or any other
DLW system-requires careful calibration, high-precision components, and con-
trol of post-processing deformation. Disentangling the contribution of each to
our accuracy estimates is beyond the scope of this work.
2.6 Resolution
The minimum feature resolution of a two-photon polymerisation process is a
nonlinear function of the precision of laser focal point control, laser power, and
the chemical kinetics of the photoresist [LaFratta et al., 2007]. This complexity
makes it challenging to predict the effective printing resolution of any DLW
system, and thus each hardware configuration and photoresist combination must
be verified experimentally.
One constraint on minimum feature size is the size of the laser's focal
point, as photon density is sufficiently high to initiate the polymerising re-
action throughout this region. The laser focal point radial (i.e., along the X-
and Y-axes) and axial (along the Z-axis) dimensions are functions of the laser's
wavelength, λ, and the numerical aperture, NA, of the objective lens. Assuming
10
an ideal (i.e., Gaussian) beam profile, the full-width half-maximum size of the
point spread function is λ/(2· NA) (radial) and λ/(2· NA2) (axial) [Urey, 2004].
With our operating wavelength (780) nm and objective NA (0.8), the theoretical
focal point dimensions are 488 and 609 nm, respectively. Other factors affect the
effective size of the focal point-for example, if the laser beam incompletely fills
the back of the objective, the effective NA will be lower, whereas changing the
laser's power will control the portion of the point spread function that crosses
the polymerisation threshold [Kawata et al., 2001].
We treat the location of the centre of the focal point as the voxel location,
since the degree to which it can be controlled defines another constraint on
feature size. While the Y and Z positioning of the focal point are addressable
with sub-micron accuracy via analogue control of the galvanometer mirror and
the objective-lens scanner, respectively, the continuous sinusoidal motion of the
resonant scanline along the X axis precludes direct control of position. Instead,
X-axis voxel positions and sizes are defined by the rate at which the laser beam
power can be modulated across the polymerisation threshold. Given the Pockels
cell update frequency and the resonant scanner sweep rate, we estimate the X-
axis resolution to be ∼ 2.5–5.6 µm (at the edge and centre of the resonant sweep,
respectively) at 1× zoom, with minimum feature size decreasing linearly with
increasing magnification-for example, the 300-µm scale used for the resolution
tests in Fig. 5 should have X voxel widths of ∼ 1.1–2.5 µm (edge and centre,
respectively). In the following discussion we report only worst-case resolution-
that at the centre of the X sweep.
Given these theoretical estimates of printer performance, we quantified real
performance by printing objects with thin single-voxel features (Fig. 5a,b) and
measuring feature dimensions using SEM micrographs. During polymerisation,
the forming polymer tends to shrink due to both the emerging binding forces and
polymerisation quenching from molecules present in the liquid solution. These
effects are reduced when the forming polymer is attached to a solid object (e.g., a
previously polymerised structure). We report the feature size as it is measured
in features attached to a larger solid structure, but we also note the sizes of
isolated features. We printed structures that consisted of channels containing
single-voxel bridges, at 2.2× zoom (an FOV of 302×302 µm). Because single-X-
voxel bridges often broke during postprocessing, we also report 2-X-voxel–wide
bridges. We estimated resolution by measuring the size of the bridges where
they are attached to the supporting walls, and also estimated minimum size
of suspended features-giving an idea of possible shrinkage-by measuring the
bridges at their centre. Results are shown in Table 1.
The reported resolutions can be used to build complex thin-feature struc-
tures, such as the 60-µm woodpile shown in Fig. 4a–c and the hollow torus knot
structure in Fig. 4d. Though these minimum feature sizes will be sufficient for
some applications, further improvement is possible. As the X-axis voxel reso-
lution is in part defined by the rate of laser power modulation, upgrading the
Pockels cell and/or control hardware may produce a substantial reduction in
feature size across the whole X axis. Improvement in all axes could be achieved
by reducing the focal point size (e.g., by increasing the objective lens aperture,
11
Figure 5: Objects with one- and two-voxel features printed on our rDLW system.
(a) Object used to estimate minimum voxel size on the Y and Z axes. All bridges
have single-voxel height (Z), and increasing width on the Y axis. The bottom bridge
has one-voxel width; thus, it gives an idea of the thinnest suspended structure that
can achieved with the used parameters and photoresist. The object was printed with
2.2× magnification for a 302×302 µm field of view. The resolution of each focal plane
is 152 × 1024 voxels, and the vertical distance between Z planes is 0.5 µm. (b) Object
used to estimate the voxel size on the X axis. The printing parameters are the same
as in (a). The bridges were designed to be two voxels wide on the X axis, so their
size follows a sinusoidal distribution due to the cosinusoidal speed profile of the laser
beam. (c) Top view of the central bridge of (b), which represents the largest value in
the workspace of double-voxel X resolution at this zoom level. (d) Top view of the
lowest bridge of (a). (e) View of the lowest bridge of (a) at 60◦ from the top view.
12
Voxel
dimension (µm)
X
2X
Y
Z
2.5/1.1
5.0/2.2
0.3
0.5
(µm)
Attached
1.09±0.14
2.73±0.06
1.25±0.03
2.10±0.05
(µm)
Isolated
0.3±0.14
1.26±0.06
0.35±0.03
0.45±0.05
Table 1: Printing resolution estimates. Resolution was estimated from SEM micro-
graphs of the single- and double-voxel bridges in the objects shown in Fig. 5. Measure-
ments of attached features were made proximal to the wall of the support structure;
isolated-feature sizes were measured at the bridge centres. "Voxel dimension" is de-
fined by the cell sizes used for voxelisation. We list theoretical voxel dimension for
the X axis as two numbers: at the centre and edges of the resonant scanner's sweep,
respectively. We report measurements of X feature size at the centre of the resonant
sweep-the region of the workspace in which we expect the largest minimum feature
sizes. Discrepancies are expected due to the nonzero size and anisotropic shape of the
focal point, postprocessing deformation, and a possible difference between rise and fall
response times of our Pockels system.
flattening the beam profile, or reducing power [Kawata et al., 2001]), or using
photoresists with higher polymerisation thresholds or reduced spatial expansion
factors.
2.7 Speed
A key aim for our rDLW design was to increase fabrication speed through the
introduction of a resonant scanner. As a first approximation, fabrication time
is governed by two parameters: the speed with which the beam moves through
the resist and the linear distance that the beam must traverse [Malinauskas
et al., 2013]. DLW systems typically use some combination of stage-based (i.e.,
using motorised stages to move the printed object relative to a stationary laser
focus) and mirror-based (i.e., using mirrors to move the laser focus relative to
a objective's stationary object) methods for polymerising the desired location.
Each has its advantages, making direct comparisons challenging, but mirror-
based scanning is capable of realising significantly higher scanning speeds while
maintaining micro- and nanoscale feature sizes (Table 2).
Many DLW systems realise significant time savings by optimising the laser
path such that travel distance is minimised. For printed objects with small fill
ratios, this strategy can produce substantial improvements in fabrication speed.
Other strategies, such as the core-and-shell printing process [Thiel et al., 2016],
can reduce fabrication time for objects with low surface-area/volume ratios.
Our approach achieves uniform fabrication times across fill ratios by using a
resonant scanner to sweep the beam over every point in the printing workspace
(Fig. 1b), maximising travel distance but at a higher mean speed than in many
previously described systems (Table 2).
13
Positioning
Mechanism
Scanning
Nominal Feature
Speed (mm/s)
Size (µm)
Stepper motor
10
1
Reference
[Kumi et al., 2010]
stage
Piezo stage
0.03–0.09
0.06
10–30
0.28–1.5
0.065
1.5
[Straub and Gu, 2002]
[Haske et al., 2007]
[Ovsianikov et al., 2011]
Galvo-galvo
0.005–0.2
0.085–1.5
[Thiel et al., 2010]
mirror
Rotating
polygon-galvo
mirror
0.01
7
0.4–200
21–103
400
7200
1.3
0.78–1
0.2–1.2
0.086–0.43
1–10
[Maruo and Ikuta, 2000]
[Farsari et al., 2006]
[Obata et al., 2013]
[Gottmann, 2009]
[Skylar-Scott et al., 2016]
1
[Rensch et al., 1989]
Resonant-galvo
3300–8200
1–4
Present work
mirror
Table 2: Representative DLW laser scanning speeds and nominal minimum feature
sizes reported in recent literature. "Present work" gives scan speed with the printer
configured as described for most of the examples in this paper (1.6× zoom yielding
a 416 × 416-µm workspace, and printing during only the left-to-right sweep of the
resonant scanner) and the maximum speed that we've used (bidirectional printing at
1.3× zoom). Minimum feature size and scan speed covary as described in the text.
In a resonant-scanner–based system with a resonant frequency of Fr and
useable workspace dimensions of 2ξD along the scanning dimension, the aver-
age beam speed is 2ξDFr. For example, at 1.6× zoom, our system's useable
workspace along the X axis is approximately 412 µm, resulting in an effective
mean beam speed of 3.3 m/s. Note that this estimate assumes printing only in
one direction of the laser scan (Fig. 1b); bi-directional printing effectively dou-
bles beam speed, although any misalignment of the two scan directions leads
to inferior results. Note also that decreasing magnification will increase the
distance that the beam travels while commensurately increasing beam speed,
leaving print time unchanged (provided that the laser can supply sufficient power
to polymerise resist at the higher speed).
For our rDLW system, we can estimate fabrication time for an object from
the linear printing distance (i.e., length of a scan line 2ξD times the number
of scan lines per layer Sy times the number of layers Sz) times the mean beam
speed. For the large block in Fig. 2b, this results in an estimated fabrication
14
time of ∼ 19 s, which comports well with our actual print time of ∼ 25 s.
DLW systems vary widely and there are no established benchmarks, making
general comparisons of writing speed and printing time difficult [LaFratta et al.,
2007, Sun and Kawata, 2004]. Galvanometer-based two-photon microscopes are
typically an order of magnitude slower than resonant-scan microscopes. For
example, at 512 × 512 pixels, resonant-scan microscopes typically achieve 30-
Hz frame rates while typical galvo-based systems achieve ∼1–2-Hz frame rates
at the same scan angle and resolution [Jonkman and Brown, 2015]. A pure
galvanometer beam control system designed for calcium imaging might see a
beam speed of 200 mm/s [Obata et al., 2013]. If such a system were used to
write the simple block in Fig. 2b, fabrication would take about 3.8 minutes.
We emphasise that these calculations are for an object with a fill ratio of 1
(i.e., 100% of the total object volume is polymerised), so these estimates rep-
resents a worst-case fabrication time for an object of this size. Objects with
smaller fill fractions-as would be likely for most objects of interest-would see
reduced fabrication times on galvanometer- or stage-based systems that opti-
mise beam path to reduce total travel distance. As with estimates of accuracy
and resolution, our estimates of printing speed are highly dependent on our
choice of optical components, printing parameters, and photoresist. Significant
improvements or diminishments in all assayed metrics can be realised with a
different choice of hardware, laser power, or row/layer density.
3 Discussion and Conclusion
We reported on rDLW: a 3D printer based on a standard two-photon microscope
with a resonant raster scanner and our custom PrintImage control application.
The rDLW system provides several key features including full access to fabri-
cation parameters, high printing speeds, and ease of extensibility. Building on
the widely-used open-source ScanImage microscopy package, this work provides
a platform for future modifications and customisations.
Because our rDLW printer exposes all process parameters, and indeed all
control software, to the user, our system is easily adaptable to experiments with
novel fabrication techniques that take advantage of the unique feature of voxel-
by-voxel modulation of laser power. This fine-grained power control proved
useful in compensating for nonuniform optical effects such as vignetting, and
could further be used to take advantage of intermediate states of polymerisa-
tion and the material properties that so arise (i.e., refractive index, rigidity, or
fluorescence) [Gissibl et al., 2016b]. In addition, laser power is nonlinearly corre-
lated with minimum feature resolution [Kawata et al., 2001], so per-voxel power
modulation could provide additional control of the sizes of different single-voxel
features in a single print process.
The use of a tunable femtosecond laser adds significant cost to our system,
and could be replaced by fixed-wavelength fibre-based femtosecond sources.
However, since tunable femtosecond lasers are common components of two-
photon microscopes, we suggest that this more flexible laser may open up new
15
material choices for polymerisation at a range of wavelengths. We have demon-
strated the capabilities of the system using IP-Dip, a proprietary refraction-
index–matched photoresist designed for high-resolution two-photon polymerisa-
tion. However, the wide tunable range of modern two-photon laser sources (for
our laser, 700–1050 nm), or the ease with which another laser can be added
to the beam path, makes possible printing with commercial or custom resists
having significantly different absorption spectrum peaks. This capability would
simplify fabricating compound structures composed of multiple photoresists,
each with different mechanical or optical properties [Zeng et al., 2015].
A limitation of existing DLW techniques-which not infrequently influences
printed object design-is the need to add structural supports under suspended
features, lest gravity and movement of the photoresist during printing displace
the incomplete features before they are anchored to the body of the object being
printed. An unexpected benefit of the rDLW system is that the high speed of
printing allows, to some degree, the printing of unsupported, suspended features
in viscous liquid photoresists (like IP-dip). In addition to streamlining object
design, the ability to print without the need of support structure potentially
enables the fabrication of previously unrealisable objects.
Though the maximum print size of the described rDLW system (∼ 400 ×
400 × 350 µm) is suitable for many micro-scale applications, there are use cases
(e.g., tissue culture scaffolding) that require larger object sizes while maintain-
ing micron resolution. Several photoresists, including IP-Dip, Ormocer, and
SU-8, allow newly polymerised material to bond directly onto previously poly-
merised material without mechanical defect. This allows an object to be built
by stitching together several overlapping sections, each of which we refer to
as a metavoxel. Additionally, whereas for a single metavoxel the zoom setting
controls both X-axis resolution and maximum object size, stitching allows de-
coupling of these two parameters by printing a single piece as multiple smaller
overlapping pieces at higher magnification. When stitching multiple metavox-
els together, a stage with absolute linear accuracy on the order of the desired
resolution is required. While a discussion of stitching is outside the scope of
this paper, we note that, as of this writing, PrintImage allows stitching using
either the microscopy stage or a commercial hexapod system, thus allowing fast
printing of arbitrarily large objects, and it can easily be extended to use other
hardware.
While resonant scanners have been previously used in 2D laser printing
[Schermer and Dowd, 1990, Takeshi and Kaoru, 1995], a more common ap-
proach for raster-scan printing uses a multi-sided mirror rotating at constant
speed to sweep the across the workspace [Takizawa and Kataoka, 1997]. Replac-
ing the resonant scanner in our rDLW printer with such a raster-scan mirror
would triple print speed by eliminating the flyback and near-zero-speed por-
tions of the beam path.
It would allow nearly linear beam speed, providing
uniform voxel size and obviating sinusoidal power compensation. Though this
would remove the resonant rDLW's capacity to increase print resolution with-
out a concomitant reduction in printing speed (i.e., zoom printing), a similar
effect may be achievable by incorporating a zoom lens. Conversely, a change in
16
mirror rotation speed would allow changes in X-axis resolution without affecting
workspace size.
4 Materials and Methods
4.1 Programming and analysis
All programming, modeling and analysis was done in MATLAB (The Math-
works, Framingham, MA) running under Windows 10 on a desktop computer
with an Intel i7 processor and 16 GB of RAM. The PrintImage software is
available at https://github.com/gardner-lab/printimage. Its documenta-
tion lists its software dependencies.
4.2 Design of calibration objects and print models
All custom benchmarking and example objects described here were created with
Solidworks2016 (Dassault Systmes, Concord, MA) and exported using the na-
tive STL converter. Calibration objects not printed on our rDLW system (see
Figure 2a) were printed using a Nanoscribe Photonic Professional GT (Nano-
scribe GmbH, Stutensee, Germany). STL files for the Darwin Bust (Fig. 1d)
and Torus Knot (Fig. 4c) were obtained from the Museum of Applied Arts and
Sciences in Sydney, Australia and Tadej Skofic, respectively.
4.3 Photoresists and Post-Processing
A key step in developing a DLW solution is identifying photoresists that are
compatible with both the specifications of the printing process (e.g., two-photon
polymerisation, laser wavelength and power output, printing speed, etc.) and
the requirements of the application (e.g., hardness, adhesion, biocompatibil-
ity, optical clarity, etc.). Though multiple photoresist formulations have been
described, the majority used for two-photon DLW consist of soluble organic
monomers or oligomers (typically acrylate derivatives) that are cross-linked,
and thus made insoluble, by free radicals or cations produce by the exposure of
a photoinitiator or photoacid generator [Fourkas, 2015]. The use of a tunable
laser in the described rDLW system offers the possibility of printing with a va-
riety of commercially available (e.g., Ormocer, KMPR, SU-8, etc.), custom, or
proprietary photoresists.
In an effort to ensure that our assays were representative of the limits of
our rDLW system's performance, all objects reported here for illustration or
benchmark measurements were printed with a high-performance photoresist,
IP-Dip (Nanoscribe GmbH, Stutensee, Germany). IP-Dip is a proprietary liq-
uid photoresist that is refraction-index–matched to glass to minimise optical
distortion and enable rapid, fine-resolution two-photon polymerisation. IP-Dip
polymerises under 390-nm light (i.e., the two-photon effective wavelength of
our 780-nm source), producing solid, semi-transparent acrylic objects that have
17
been used in biomedical, optical, and microfluidic applications. Following print-
ing, residual un-polymerised resist was removed by submerging the substrate
and printed element in a solvent, propylene glycol methyl ether acetate (PG-
MEA), for approximately 20 min. The prints were then rinsed in methoxy-
nonafluorobutane to remove trace PGMEA residue.
4.4 Scanning Electron Microscopy
Measurements of printed objects were made using SEM micrographs. To en-
hance sample conductivity, the samples were sputter-coated with gold prior to
imaging. The samples were placed 3 cm under the gold target and were coated
for 1 min at 0.05 mbar and 20 mA. The samples were imaged at 6-mm work-
ing distance with the secondary electron sensor, 3-kV accelerating voltage and
30-µm aperture size.
4.5 Energy Deposition Analysis
When IP-Dip polymerises, its fluorescent intensity changes, allowing printed
objects to be imaged by exposing them to the laser at a power that causes
fluorescence but is below the polymerisation threshold. The imaged fluorescent
intensity is inversely proportional to the degree of polymerisation.
The energy deposition profile was quantified by measuring the fluorescent
intensity of printed cubes at a depth of 5 µm below their top surfaces. Images
were made using the ScanImage software at 1× zoom, and were analysed in
MATLAB. As vignetting at the extreme corners of the workspace reduces the
laser's intensity beyond our ability to compensate during printing, we restricted
our analysis to objects up to 400×400 µm (1.6× zoom). To eliminate the effects
of spatial nonuniformity (such as vignetting) in our imaging system, rather than
photographing still images and measuring brightness values over the imaging
plane, we instead moved the printed objects under the lens (at 200 µm/s along
the X axis) using our stitching stage and recorded over time (at 15.21 Hz) the
brightness values over the 1-pixel-by-10-µm XY region of the printed cube at the
centre of the camera's reference frame at each X-axis step. This was repeated
for 15 equally spaced lines covering the Y axis. In order to compensate for the
non–vignetting-corrected imaging laser power, a control image of the field of
view without any objects was captured, and intensity values of the images of
each test object were divided by the control image's intensity.
5 Author Contributions
TJG and JMT conceptualised the project and implemented the initial proof
of concept. BWP wrote the software for controlling the print process and in-
tegrated it with existing ScanImage routines. TMO and JMT designed the
microscope modifications to enable the new printing process. CM developed
test print objects, created calibration protocols, made all SEM micrographs,
18
and performed quantitative testing. BWP, TMO, and CM jointly contributed
to device and process refinement. TJG and TMO supervised the project. BWP,
CM, amd TMO drafted the manuscript with input from all other authors.
6 Acknowledgments
We wish to thank Alice White (Boston University) for use of her Nanoscribe
Photonic Professional GT 3D printing system and her expertise with microfab-
rication processes; Jacob Franklin (Vidrio Technologies) for his assistance with
ScanImage; Tadej Skofic for designing the Torus Knot shown in Fig. 4; and the
Museum of Applied Arts and Sciences in Sydney, Australia for providing the
bust of Darwin shown in Fig. 1. We also wish to thank Alberto Cruz-Martin,
Todd Blute, Ian Davison, Jeff Gavornik, and L. Nathan Perkins for their helpful
comments on earlier drafts of this manuscript. Furthermore, we are grateful for
the packages on the MATLAB File Exchange from Alex A (Mesh voxelisation),
Eric Johnson (STL File Reader), Pau Mic´o (stlTools), and Teck Por Lim (Sig-
nificant Figures). This research was supported by NIH grants (U01NS090454
and R01NS089679) and a sponsored research agreement with GlaxoSmithKline.
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Walkers. Advanced Materials, 27(26):3883–3887, 2015.
ISSN 09359648.
doi: 10.1002/adma.201501446. URL http://www.pubmedcentral.nih.gov/
articlerender.fcgi?artid=4660875.
23
|
1908.11098 | 1 | 1908 | 2019-08-29T08:31:36 | Pushing down the lateral dimension of single and coupled magnetic dots to the nanometric scale: characteristics and evolution of the spin-wave eigenmodes | [
"physics.app-ph",
"cond-mat.mes-hall"
] | Planar magnetic nanoelements, either single- or multi-layered, are exploited in a variety of current or forthcoming spintronic and/or ICT devices, such as read heads, magnetic memory cells, spin-torque nano-oscillators, nanomagnetic logic circuits, magnonic crystals and artificial spin-ices. The lateral dimensions of the elemental magnetic components have been squeezed down during the last decade to a few tens of nanometers, but they are still an order of magnitude larger that the exchange correlation length of the constituent materials. This means that the spectrum of spin-wave eigenmodes, occurring in the GHz range, is relatively complex and cannot be described within a simple macrospin approximation. On the other hand, a detailed knowledge of the dynamical spectrum is needed to understand or to predict crucial characteristics of the devices. With this focused review we aim at the analysis and the rationalization of the characteristics of the eigenmodes spectrum of magnetic nanodots, paying special attention to the following key points: (i) Consider and compare the case of in-plane and out of-plane orientation of the magnetization, as well as of single- and multi-layered dots, putting in evidence similarities and diversities, and proposing a unifying nomenclature and labelling scheme; (ii) Underline the evolution of the spectrum when the lateral size of magnetic dots is squeezed down from hundreds to tens of nanometers, as in current devices, with emphasis given to the occurrence of soft modes and to the change of spatial localization of the fundamental mode for in-plane magnetized dots; (iii) Extend the analysis from isolated elements to twins of dots, as well as to dense arrays of dipolarly interacting dots, showing how the discretized eigenmodes distinctive of the single element transform in finite-width frequency bands of spin waves propagating through the array. | physics.app-ph | physics | Applied Physics Review 6 (3) 031304 (2019)
Pushing down the lateral dimension of single and coupled
magnetic dots to the nanometric scale:
characteristics and evolution of the spin-wave eigenmodes
Dipartimento di Fisica e Geologia, University of Perugia, Via Pascoli, I-06123 Perugia,
Giovanni Carlotti
Italy
and Centro S3, Istituto di Nanoscienze-CNR, I-41125 Modena, Italy
[email protected]
ABSTRACT
Planar magnetic nanoelements, either single- or multi-layered, are exploited in a variety of current
or forthcoming spintronic and/or ICT devices, such as read heads, magnetic memory cells, spin-torque
nano-oscillators, nanomagnetic logic circuits, magnonic crystals and artificial spin-ices. The lateral
dimensions of the elemental magnetic components have been squeezed down during the last decade
to a few tens of nanometers, but they are still an order of magnitude larger that the exchange
correlation length of the constituent materials. This means that the spectrum of spin-wave eigenmodes,
occurring in the GHz range, is relatively complex and cannot be described within a simple macrospin
approximation. On the other hand, a detailed knowledge of the dynamical spectrum is needed to
understand or to predict crucial characteristics of the devices.
With this focused review we aim at the analysis and the rationalization of the characteristics of the
eigenmodes spectrum of magnetic nanodots, paying special attention to the following key points: (i)
Consider and compare the case of in-plane and out of-plane orientation of the magnetization, as well
as of single- and multi-layered dots, putting in evidence similarities and diversities, and proposing a
unifying nomenclature and labelling scheme; (ii) Underline the evolution of the spectrum when the
lateral size of magnetic dots is squeezed down from hundreds to tens of nanometers, as in current
devices, with emphasis given to the occurrence of soft modes and to the change of spatial localization
of the fundamental mode for in-plane magnetized dots; (iii) Extend the analysis from isolated
elements to twins of dots, as well as to dense arrays of dipolarly interacting dots, showing how the
discretized eigenmodes distinctive of the single element transform in finite-width frequency bands of
spin waves propagating through the array.
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TABLE OF CONTENTS
I. Introduction
II. Eigenmodes of an isolated magnetic nano-dot.
A. Out-of-plane magnetization.
B. In-plane magnetization: effect of the inhomogeneous internal field and evolution
of the fundamental mode.
C. Soft modes and microwave assisted switching.
III. Clusters and arrays of closely spaced dots.
A. Twins of dots.
B. One- and two-dimensional arrays: magnonic crystals.
IV. Multilayered dots.
A. Perpendicularly magnetized circular pillars.
B. In plane magnetized bilayer: the read head.
V. Summary and outlook.
2
I.
Introduction
Applied Physics Review 6 (3) 031304 (2019)
Thanks to the advances in nanofabrication and miniaturization, magnetic devices based on single- or
multi-layered constitutive elements, with lateral dimensions as small as a few tens of nanometers and
with either shape or intrinsic magnetic anisotropy, are routinely produced for current or forthcoming
applications.1,2 These include giant-magnetoresistance (GMR) sensors and read heads3, magnetic
memory cells4,5 and bit-patterned hard-disks6, spin-torque nano-oscillators7 and nanomagnetic logic
circuits,8,9 artificial spin-ices10,11 and magnonic crystals12. From the quasi-static point of view, the
behavior of each of these small objects can be generally accounted for by assuming a unique
magnetization vector (macro-spin approximation), but this simplified picture is not suitable to
describe their high-frequency properties. In fact, these are characterized by the presence of several
spin wave (SW) eigenmodes, occurring in the GHz frequency range, whose characteristics depend on
the specific dot shape as well as on the direction and intensity of the external field. These excitations,
also in combination with edge-effects and/or deviation from the ideal shape, can be at the origin of
unexpected behavior that can significantly impact the proper design and realization of practical
devices. For instance, spin wave eigenmodes may constitute a severe source of noise in read-heads,
putting a limit to the rate of data writing or processing.13 On the other hand, one can take advantage
from specific SW eigenmodes to facilitate the switching of a magnetic dot, as in microwave-assisted
magnetic recording14,15 where the occurrence of soft modes can be relevant.16 Finally, SWs can also
be seen as a channel to dissipate power. 17,18,19
Even if most of the previous studies of the magnetization dynamics in elliptical or rectangular dots
dealt with magnetic dots with lateral dimensions above 200 nm,20,21,22,23,24, more recent studies have
paid attention
to
the dynamics of dots as small as a
few
tens of nanometer,
25,26,27,28,29,30,31,32,33,34,35,36,37,38, 39,40,41 i.e. the targeted dimensions of many state-of-the-art devices.
These dots are generally in the single domain state, although for sufficiently low values of the external
magnetic fields and in presence of specific interactions with the substrate, it is also possible to achieve
exotic configurations, such as vortex and bubble state.42,43,44 The most powerful technique exploited
to this aim is Brillouin light scattering (BLS), either conventional 45 or micro-focused,46,47 although
other powerful techniques have been developed, such as time-resolved magneto-optical Kerr effect
(MOKE),48 magnetic resonance force microscopy (MRFM)49,50,51 thermally-activated electrical-noise
measurements41,52 and, more recently, scanning x-ray transmission microscopy (SXTM).53,54 In
parallel with the development of advanced experimental capability, also micromagnetic simulations
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and postprocessing data analysis were optimized to characterize not only the frequencies but also the
spatial profile of eigenmodes resonating within the magnetic nanoelements.20,55,56,57,58 Alternatively
to micromagnetic simulations, other codes directly compute the susceptibility tensor in the frequency
domain42 or directly diagonalize the dynamical matrix.59, 60 As stated above, these studies put in
evidence that a detailed comprehension of the characteristics of the eigenmodes spectrum requires to
go beyond the traditional macro-spin approximation, essentially because the lateral dimension of the
dots are still at least one order of magnitude larger that the exchange length (4-5 nm in common
ferromagnetic materials). Moreover, the internal field is not uniform, as it would be for an ellipsoidal
body where the ferromagnetic resonance would be described by the simple Kittel formula,61 so that
localized modes appear in specific regions where the internal field is strongly non-uniform.
Additional complexity appears when the magnetic dot consists of different layers, that may be coupled
by either exchange or dipolar fields, so that one may observe the appearance of eigenmodes whose
magnetization precession is in-phase (acoustic) or out-of-phase (optical) in the two layers. 52, 62,63,64,
Similarly, the degeneracy of discrete modes is lifted when the dots are arranged in twins65,66 small
clusters67 or in one-12 or two-dimensional68,69.70 dense arrays of dots, constituting artificial magnonic
crystals. In these systems, the anisotropic and spatially nonuniform magnetodipolar coupling among
the dots leads to a collective dynamics that cannot be described in terms of spin wave modes of
individual elements. In fact, in analogy to the well-known description of a systems of coupled
oscillators in modern solid state physics, the collective dynamics is characterized by normal modes
occurring at new frequencies, different from those of the individual (uncoupled) oscillators. For
example, for a system of two magnetic layers or a twin of adjacent dots, one finds the splitting of the
spin wave eigenmode in the above mentioned in-phase or out-of-phase modes, while for a large array
of interacting dots collective (propagating) normal modes develop, leading to the formation of
permitted and forbidden frequency bands.
In this focused review, we center our attention on the magnetization dynamics of magnetic
dots with sub-200 nm lateral size in the single domain state, considering and comparing the case of
in-plane and out-of-plane orientation of the magnetization and proposing a unifying nomenclature and
labelling scheme. The characteristic features that occur in the eigenmodes spectrum when the lateral
size of the considered dots is squeezed down from hundreds to tens of nanometers will be described,
with emphasis given to the role of exchange-energy contribution, to the occurrence of soft modes and
to the change of spatial localization of the main modes, in particular of the fundamental one. Special
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attention will be also paid to the effect of the chiral Dzyaloshinskii-Moriya interaction (DMI) that can
be induced by an adjacent layer of heavy metal atoms with large spin-orbit coupling. 71,72,73,74,75 Then
we will consider the modification of the spectrum when twins of interacting dots are considered, as a
first step to extend our analysis to the case of either one- or two-dimensional dense arrays of dots,
known as artificial magnonic crystals. Finally, we will generalize the above analysis to the case of
multilayered structures, as spin valves or magnetoresistive sensors that involve at least two or three
magnetic layers, separated by non-magnetic interlayers.
II.
Eigenmodes of an isolated magnetic nanodot
Fig. 1 presents a schematic diagram illustrating the spatial characteristics and the labelling scheme for
the magnetic eigenmodes of a circular magnetic nano-disk with diameter in the range of a few tens of
nanometers, magnetized either out-of-plane (Fig. 1a) or in-plane (Fig 1b). It can be seen that in both
cases the modes can be labelled using a couple of indices that are related to the presence of nodal
lines. In order to qualitatively comprehend the physical characteristics of these eigenmodes and their
spatial character, let us recall that the equilibrium configuration of the magnetization can be found, in
the micromagnetic approach, by minimizing the total free energy functional Etot, that results from the
sum of different terms, such as the Zeeman energy due to the external field H0, the exchange energy,
the anisotropy energy and the magnetostatic energy. In addition, in presence of a heavy-metal under-
or over-layer, one may have also an energy contribution coming from the above-mentioned DMI
interaction.
As for the dynamics of the system, it is governed by the well known Landau-Lifshitz-Gilbert equation
(LLG):
= − (𝒎 × 𝑯𝑒𝑓𝑓) + 𝑎 (𝒎 ×
𝜕𝒎
𝜕𝑡
) (1)
𝜕𝒎
𝜕𝑡
where 𝒎(𝒓, 𝑡) =
𝑴
𝑀𝒔
is the unit vector along the local magnetization, is the gyromagnetic ratio,
is the Gilbert damping constant. Heff is the effective field acting on the precessing spins, that can be
derived from the energy functional according to:
𝑯𝑒𝑓𝑓 = −
1
𝜇0
𝜕𝐸𝑡𝑜𝑡
𝜕𝒎
(2)
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Therefore, it consists of different contributions, reflecting the energy terms recalled above:
𝑯𝑒𝑓𝑓= 𝑯0 + 𝑯𝑒𝑥𝑐ℎ + 𝑯𝑎𝑛𝑖 + 𝑯𝑚𝑠 + 𝑯𝐷𝑀𝐼=
= 𝑯0+
2𝐴
𝜇0𝑀𝑠
𝛻2𝒎 +
2𝐾𝑢
𝜇0𝑀𝑠
𝑚𝒛 𝒆𝑧 + 𝑯𝑚𝑠 +
2𝐷
𝜇0𝑀𝑠
[
𝜕𝑚𝑧
𝜕𝑥
𝒆𝑥+
𝜕𝑚𝑧
𝜕𝑦
𝒆𝑦 − (
𝜕𝑚𝑥
𝜕𝑥
+
𝜕𝑚𝑦
𝜕𝑦
) 𝒆𝑧]
(3)
where H0 is the external applied field, A is the exchange stiffness constant, Ku is the uniaxial
perpendicular anisotropy constant and D the DMI constant. ex, ey and ez are the unitary vectors of the
reference frame, chosen such that the z axis is perpendicular to the sample plane. The magnetostatic
dipolar field Hms would be uniform in the case of an ellipsoidal body, only, so that for planar dots it
is usually calculated numerically, accounting for its non-uniformity and non-locality.
The most general method to solve the LLG equation above are based on proper numerical techniques
where it is spatially discretized using finite differences or finite elements methods. As a result, a
discretized version of the effective field is obtained and the corresponding system of differential
equations are solved within suitable time-stepping schemes.
A. Out-of-plane magnetization
Let us start from the analysis of the eigenmodes existing in a perpendicularly magnetized circular dot
that represents an interesting model system for the free layer of perpendicular spin torque oscillators76
or for the next generation of bit-patterned perpendicular magnetic media that will be used in
forthcoming hard disks.77 In a recent study,56 we have exploited micromagnetic simulations, using a
customized version of the commercial software Micromagus78 to analyze the eigenmodes excited by
either a pulse of magnetic field or a polarized injected current, in a circular free layer of Permalloy
with thickness d=5 nm and two different values of the radius, namely R=50 nm and R=150 nm. The
sample was perpendicularly magnetized thanks to the application of a relatively strong bias magnetic
field (Hz=10 kOe) directed along the z axis, as shown in the top panel of Fig.2. At a given time, a
weak pulse of field (duration 10 ps and constant intensity hy =100 Oe), directed along the x axis, was
applied, so to excite spin waves eigenmodes in our range of interest, i.e. up to and above 15 GHz. The
ringing down of the magnetization of each discretized cell was then recorded for a period of 50 ns
(with a sampling time of 10 ps) and the Fourier transform was calculated. Therefore, following the
Micromagnetic Spectral Mapping Technique (MSMT),20 both the eigenmode spectrum, averaged over
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the whole set of discretized cells, and the spatial profile of each eigenmode could be achieved. As
illustrated in Fig. 1a, given the circular symmetry of the sample, the modes can be labelled according
to a scheme based on a couple of indices (r,l), where the radial number r counts the circular nodal
lines and the azimuthal number l accounts for a phase shift of l×2 along a circular line. The plus and
minus signs of l indicate the sense of the SW propagation in the counter-clockwise and clockwise
directions, respectively. It can be seen in Fig 2a and 2b that the main mode is the "fundamental" (0,0)
mode, characterized by a rather uniform spatial profile, i.e the absence of any nodal plane, with
maximum amplitude in the dot center. Its frequency is appreciably larger in the case of R=50 nm
(f=7.12 GHz) if compared to the case of R=150 (f=4.49 GHz), because of both the reduction of the
perpendicular demagnetizing field and the exchange-energy contribution that are sizeable in the
smaller dot.
Fig. 1 Schematic diagram showing the spatial characteristics and the labelling scheme for the magnetic
eigenmodes of circular magnetic nano-disks with diameter in the range of a few tens of nanometers, magnetized
either out-of-plane (a) or in-plane (b). In our coding scheme, the hue indicates the phase of the dynamical
magnetization, according to the enclosed color wheel, while the brightness represents its amplitude. The nodal
lines are marked in white.
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Higher-order radial modes, labelled (1,0) and (2,0) are also visible at larger frequency for R=150 nm.
Note that the frequency of the modes increases quite rapidly with increasing the number of nodal lines,
essentially because of the increase of the exchange-field contribution Hexch in eq. 3. By repeating the
above "virtual experiment" and adding to the static field H0 also the Oersted field generated by the
injection of a current (J=9×1010 A/m2) flowing perpendicularly through the free layer, additional
modes appear in the simulated spectra, as a consequence of the symmetry breaking induced by the
Oersted field of the current. In particular, one can see the appearance, in addition to the above radial
modes, of azimuthal (orthoradial) modes, labelled (0,1), (1,1) and (2,1), characterized by the presence
of a 2 azimuthal phase-change (Fig. 2c and 2d). Looking at the dependence of the spectrum on the
dot size, it emerges that the number of modes present within a limited frequency range increases with
the dot radius. The fundamental (0,0) mode is always the most intense for excitation with a uniform
pulse only, while it can be overcome by the (0,1) mode in presence of the Oe field that is
characterized by a cylindrical symmetry.
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Fig. 2 Simulated power spectra obtained after excitation of the dot by a uniform pulse of field (hx=100 Oe, 10
ps long), while applying a constant external field Hz=10 kOe (i.e. µ0H= 1 T) along the perpendicular direction
(a-d). For the bottom panel (e-f) the external field H is tilted by 1° away from the z axis. The colour panels
represent the spatial profile of the dynamical magnetization, expressed as the product of the modulus of the
dynamical magnetization by the sign of its phase. Panels (c) to (f) refer to simulations where the presence of
the Oersted field generated by a perpendicular current with density J=9×1010 A/m2 is considered, in addition to
the external static field. Left (a,c,e) and right (b, d, f) panels refer to a dot radius R=50 nm and 150 nm,
respectively. Reproduced with permission from J. Phys D: Appl. Phys. 48, 415001 (2015) and integrated with
further panels. Copyright (2015) by the Institute of Physics Publishing (IoP). [56]
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The fundamental mode frequency decreases with increasing the dot radius, attaining the ferromagnetic
resonance frequency of the extended film for R larger than about 1 micron. Also the other modes
decrease their frequencies with increasing R, due to the reduction of the internal field. It is also
interesting to consider what happens if the external field H would not be applied exactly along the z
axis. As seen in Fig. 2e and 2f, it is sufficient a tilt of 1° off the z-axis to induce remarkable variations
of the spatial profiles of the modes, at least for the larger dot considered here. In fact, the symmetry
breaking between the x and y directions induced by the tilt of the applied field, manifests itself in the
loss of circular character of azimuthal modes (0,1), (1,1) and (2,1) in the dot with R=150 nm. Finally,
let us note that if we would have considered elliptical dots, rather than circular, one would have
observed qualitatively similar spatial profiles, with an elliptical (rather than circular, contour of the
red and blue areas, but the labelling scheme and the characteristics of the radial and azimuthal modes
would have remained qualitatively the same discussed above.
A second recent study was concerned with the eigenmodes of perpendicularly-magnetized circular
dots of FeB with radius R=60 nm.79 The authors observed thermally excited SW modes using
electrical-noise measurements41 and successfully compared the experimental results with both
micromagnetic simulations and a simple perturbation theory. The observed modes were classified as
eigenmodes with radial and azimuthal nodal lines, in agreement with the scheme proposed in Fig. 1a.
Interestingly, they were able to provide evidence for the splitting of azimuthal modes (+ or -- sign of
l in Fig. 1a), caused by the dynamic dipolar coupling that was fully taken into account.
A similar splitting of the azimuthal eigenmodes, caused this time by the presence of the above
mentioned interfacial DMI interaction , was found theoretically in either circular or square magnetic
dots of lateral size L=100 nm.80 As illustrated in Fig. 3, even if the authors did not use the labelling
scheme proposed in this review, it is clear that their Mode 1 corresponds to the (0,0) fundamental
mode of our Fig. 1a, while the other modes are either radial (Mode 4, corresponding to (1,0)) or
azimuthal ones (Mode 2 and 3, corresponding to (0,±1) and (0,±2), respectively). Interestingly, it was
found that the presence of a sizeable DMI constant D leads to frequency splitting of the azimuthal
eigenmodes, while the others are only slightly affected by the DMI. The magnitude of the splitting
appears to increase with the value of the D and to be larger for the circular magnetic dots if compared
to the squared ones. The frequency splitting is clearly associated with lifting in the degeneracy of
eigenmodes l=±l. On the other hand, modes with a strong radial character, such as Modes 1 and 4,
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experience only a slight decrease in their frequency with increasing D and little change in their spatial
profile. Similar features are also seen in the square dots, but the distinction between "radial" and
"azimuthal" modes is not as sharp. In any case, it is evident that a careful analysis of the above-
discussed frequency-splitting of some of the eigenmodes offers a tool to experimentally estimate the
DMI constant in layered systems relevant for spintronics.
Fig. 3 Map of the eigenmode power spectral density as a function of the interface Dzyaloshinskii-Moriya
constant D for (a) 100-nm-diameter circular dots and (b) 100-nm-wide square dots. Selected profiles of the four
lowest modes for different strengths of the DMI for the (c) circular and (d) square dots. Reproduced with
permission from Phys. Rev. B 89, 224408 (2014). Copyright (2014) by the American Physical Society. [80]
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B. In-plane magnetized dots: effect of the inhomogeneous internal field
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If we now consider magnetic nanodots with in-plane magnetization, then the internal field becomes
strongly non-uniform so for absent or weak external fields one observes the formation of an
inhomogeneous magnetization configuration, with flower, C- or S-states.81, 21In second place, even in
presence of a saturating external field applied in-plane, the spatial profiles of the SW eigenmodes can
be rather complex and evolve significantly with the lateral dimension of the dots. Similar to the case
of the perpendicularly magnetized dots, each mode can be labeled with two integer indices (nx,ny)
whose values correspond to the number of nodal lines. In this case however, as illustrated in Fig. 1b,
the nodal lines are not radial and azimuthal, as in the case of perpendicular magnetization, but parallel
or perpendicular to the direction of the magnetization (x axis). To illustrate the complexity the
eigenmode spectrum in a realistic sample, let us start from the micromagnetic results relevant to an
elliptical dot having dimensions 100×60×5 nm3, that were published in Ref. 57. The dot was
discretized in cells with size of 1×1×5 nm3 (the small lateral size was chosen in order to better mimic
the dot curvature) and its dynamical properties simulated using the Micromagus software.82 Instead
of using a pulse of field to excite the eigenmodes, as in the previous section IIA, here a stochastic
magnetic field, uncorrelated in both space and time, was used to model thermal fluctuations. In such
a way, one can obtain the whole set of modes existing in the nanodot (rather than a subset of modes
compatible with the spatial symmetry of the pulsed field), but at the expense of a rather long
simulation time and of somehow noisy spectra and profiles, as shown in Fig. 4. The trajectory of the
magnetization of each discretized cell at T=300 K was recorded for 200 ns, at a constant value of the
external field applied along the major axis. These data were used to determine the frequency and the
spatial profile of the eigenmodes using a local Fourier-transform analysis. The power spectrum Pi,j(f),
of the magnetization was calculated for each discretization cell located at (i,j). Then, the average
power spectrum was calculated as the sum of the power spectra of each single cell. The two-
dimensional spatial distribution of the dynamical magnetization for each eigenmode was then
determined by the MSMT technique anticipated in the previous paragraph.20 The profiles are
presented in Fig. 4 as bi-dimensional plots of the dynamical magnetization amplitude multiplied by
the sign of its phase, together with the spectra calculated at room temperature for different values of
an external field H applied along the major axis of the ellipse. It can be seen that there are several
modes whose position in frequency evolves with the applied field intensity. Note that all modes
display nodal planes, except the (0,0) one (notice that the presence of the white central region in mode
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(0,0) of Fig.1b does not correspond to a nodal line, because the phase of the dynamical magnetization
does not change sign across this boundary). This would be the only mode present in the spectrum if
one calculates the Fourier transform of the time averaged magnetization, as shown in the lowest
spectrum of Fig. 4. Therefore, from the experimental point of view, the (0,0) mode is the
"fundamental" mode, that would be the only one detected in either a ferromagnetic resonance, or a
Brillouin light scattering experiment at small incidence angle of light. Magnetostatic effects appear in
the fact that the (0,0) mode amplitude is much larger at the edges than at the dot center. In fact, the
magnetostatic (demagnetizing) field Hms is relatively large close to the dot borders orthogonal to the
static magnetization, because of the appearance of free magnetic poles. As a consequence, the
effective field Heff is much lower close to the dot borders where the dynamic amplitude becomes
larger than elesewhere. This characteristic localization may affect the frequency and the linewidth of
this mode since it is highly sensitive to the structural quality/imperfections of the dot borders
imperfections,50 as well as to size and shape variations in large arrays of dots.31
Similarly to the case of the perpendicularly magnetized dots, also in the present case the dot frequency
increases quite rapidly with the mode indices, essentially because the introduction of nodal lines
causes a substantial increase of the exchange-field contribution Hexch. In Fig. 5 the evolution of the
eigenmodes frequency with the external field is shown. The frequency decreases with decreasing
external field, reflecting the reduction of the effective field felt by the precessing spins.
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Fig. 4 Simulated eigenmodes spectra of the elliptical dot for different values of the external field H, applied
along the major axis of the ellipse. The three upper spectra are calculated as the average from the spectra of the
discretized cells, while bottom spectrum is relative to the average magnetization of the dot. The top insets
illustrate the calculated spatial profiles of the relevant eigenmodes (the colors represent the amplitude of the
dynamical magnetization multiplied by the sign of its phase). Reproduced from J. Appl. Phys. 115, 17D119
(2014) with the permission of AIP Publishing and integrated with further panels. [57]
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Fig. 5 Evolution of the eigenmodes frequency with the intensity of the magnetic field, applied along the major
axis of the elliptical dot, from +700 Oe to -625 Oe. The full circles correspond to the four modes that can be
excited with an out-of-plane field pulse and the corresponding spectrum is reported as a bottom inset.
Reproduced and adapted from J. Appl. Phys. 115, 17D119 (2014) with the permission of AIP Publishing. [57]
Remarkably, when the field is reversed and its value approaches that of the coercive field (H=-630
Oe), the (0,0) mode softens, leading to the reversal of the dot magnetization, as will be discussed in
section IIC. The bottom inset of Fig. 5 shows the spectrum that can be obtained exciting the system
with a uniform perpendicular pulsed field: only spatially symmetric modes are excited.
It is also interesting to consider how the characteristics of the mode spectrum change when the lateral
dimensions of the magnetic dot increase from the nanometric to the micrometric scale, according to
the results of Ref. 39, that is extended here to consider dot with sub-100 nm dimension, with a
thickness of 10 nm.83 In this case, to reproduce the BLS measurements performed at almost normal
incidence, in the micromagnetic simulations the modes were excited by a unifrom field pulse applied
perpendicular to the film plane. This means that only spatially symmetric modes, (such as the previous
mentioned (0,0) and (2,0)) modes could be efficiently excited. As seen in Fig. 6, when the dot length
is below about 30 nm, the only mode that is present in the frequency range up to 20 GHz is the (0,0)
mode. On increasing the dot length L above about 40 nm, one sees that also the (2,0) mode enters the
relevant frequency window. For dot length above about L=100 nm, one observes that the lowest mode
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(0,0) tends to be strongly localized at the dot edges, since it gets trapped in the minima of the internal
field close to the borders of the dot. Therefore it loses its "fundamental" character and can be labelled
as symmetric edge mode (S-EM). Instead, the (2,0) mode, characterized by a large amplitude in the
central region of the dot, for dot length above 100 nm becomes the mode with the largest average
dynamical magnetization and its frequency approaches that of the uniform ferromagnetic frequency
of the extended film. Therefore, as seen in the insets of Figs. 6 and 7, for L above about 100 nm this
mode can be labelled as "fundamental" (F) or "center mode" and it is by far the most intense of the
spectrum, when it is excited by a spatially unifrom external field (as it happens in microwave assisted
switching, for instance). Instead, for L below 90 nm, the most intense peak is the (0,0) mode, with
maximum amplitude at the dot edges. Remarkably, in the range of intermediate dot lengths between
about 80 and 110 nm, the two modes are simoultaneously excited with similar intensity, so that both
of them are entitled to be defined as "fundamental" modes. This interchange of the "fundamental"
character and the evolution of the modes frequencies with the length of the elliptical dot can be also
followed in Fig. 7, where the region of coexistence of two "fundamental modes" is highlighted by the
rectangular shaded area. Note that this simultaneous presence of two 'fundamental' modes, with
comparable intensity can have important consequences in terms of coupling with an external uniform
field or beating and mixing phenomena if the nonlinear regime would be achieved. In Fig. 7 we have
also reported the frequency evolution of the antisymmetric (1,0) mode, that was not present in Fig. 6
since it can be excited only applying an antisymmetric field pulse to the dot. For L larger than 100
nm, this mode becomes an antisymmetric edge mode (AS-EM) and its frequency is very close to that
of the S-EM. Instead, when L is reduced below about 90 nm, the presence of the nodal plane causes a
large cost in terms of exchange energy and it becomes the usual (1,0) mode of smal dots, with a
frequency that increases monotonously with reducing the dot dimension.
Note that in the case of dots with lateral size L above 200-300 nm,35, 84 in addition to the center mode
(F) and the edge modes (EM) reported in Figs. 6 and 7, there are several other modes resulting from
the evolution of the (nx,ny) modes described above. They are dominated by the magnetostatic energy
for large dot size, while the exchange-energy contribution becomes less important, and assume the
labelling of nx-BA (backward) modes (dipolar modes with nx nodal lines perpendicular to H) and ny-
DE (Damon -- Eshbach) modes (with ny nodal lines parallel to the direction of H). Remarkably, in
relatively large dots, where the contribution of the exchange field Hexch to the eigenmode frequency
is much lower that of the magnetostatic dipolar field contribution Hms, the BA modes appear at
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frequencies below that of the F mode. This is consistent with the fact that magnetostatic backward
volume waves (magnetostatic surface waves, i.e Damon-Eshbach waves) in thin films have
frequencies below (above) the ferromagnetic resonance.85
Fig. 6 Simulated power spectra obtained after excitation of the dot by a uniform perpendicular pulse of field
(10 Oe high and 10 ps long), while applying a constant external field H=1 kOe along either the easy in-plane
direction of the elliptical dots. For each spectrum, the dimensions of the long and short axis of the dot (expressed
in nm) are reported. The red lines are guides for the eye, while the asterisk connotes the mode with the
"fundamental character" in each spectrum. The color panels represent the spatial profile of the dynamical
magnetization of selected eigenmodes, expressed as the product of the modulus of the magnetization by the
sign of the phase. Please note that antisymmetric modes, such as the (1,0) mode, are not present in these spectra
because they are not excited by the spatially uniform pulse of field used here. Reproduced with permission
from J. Phys. D: Appl. Phys. 47, 265001 (2014) and extended to lower dimensions of the dots with further
panels. Copyright (2014) by the Institute of Physics Publishing (IoP). [39]
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Fig. 7 Evolution of the calculated (lines) and measured (points) frequencies of the three main modes present in
a small (in-plane magnetized) elliptical dot, as a function of the dot length (major axis of the ellipse) for the
external magnetic field H=1 kOe, applied along the easy in-plane direction. It is seen that the (0,0) and (1,0)
modes of sub-100 nm dots become the symmetric and antisymmetric edge-modes of large dots, while the (2,0)
mode evolves in the center mode of large dots. The filled (bold) aspect of the dots (curves) indicate the most
intense peak in experimental (simulated) spectra, respectively. Within the highlighted rectangular area there is
the coexistence and the crossing of the "fundamental" character of the modes, as explained in the text.
Reproduced with permission from J. Phys. D: Appl. Phys. 47, 265001 (2014), adapted, integrated with further
data and extended to lower dimensions of the dots. Copyright (2014) by the Institute of Physics Publishing
(IoP). [39]
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Fig. 8 Micromagnetic calculations showing how mode intensities and profiles depend upon interfacial DMI
for a 200 nm x 100 nm elliptical ferromagnet. The upper plot summarizes the frequencies and intensities of
modes as a function of the DMI strength. Shown in the lower left are mode spectra calculated by taking the
Fourier transform in time after excitation by a spatially uniform pulse of field. The corresponding mode
intensity profiles are shown on the right. Reproduced with permission from Phys. Rev. B 99, 214429 (2019).
Copyright (2019) by the American Physical Society. [86]
Let us conclude this section dedicated to the characteristics of SW eigenmdes in in-plane magnetized
dots, citing a very recent paper that has been just published concerning the influence of DMI
interaction on the modes spectra.86 The authors found that, as a consequence of the nonreciprocity of
SW propagation along +k and -k, in a confined geometry states with well-defined nodes which are
inherently phase modulated such that space-inversion symmetry of the mode profile is lost. Therefore,
additional spectral features become visible in ferromagnetic resonance studies of microelements with
DMI, as illustrated in Fig. 8 for the case of a 200 nm × 100 nm elliptical dot. It is evident that modes
labelled A0 and B0 correspond to modes (0,0) and (2,0) of previous Figs. 6 and 7, also named "edge
mode" and "center mode" for increasing dot size. Moreover, it is found that for D < 1 mJ/m2 , the shift
in frequency is moderate and additional modes faintly appear, while for values D > 1 mJ/m2 the shift
of the eigenfrequencies becomes substantial and high-order modes appear in the spectra, as a clear
fingerprint of DMI.
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C. Soft modes and microwave-assisted switching
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The above analysis about the spectrum of the eigenmodes of a magnetic dot and its evolution with the
applied field can be important in order to achieve efficient switching. In particular, involvement of
eigenmodes in the magnetization reversal process can be particularly relevant when one has the
occurrence of soft modes as well as when one exploits microwave-assisted switching.14,15
Soft magnetic modes may appear when the system undergoes a transition between different magnetic
configurations. "Softening" here refers to the progressive decrease of a mode frequency as the external
field gradually approaches the critical transition field. For example, it is seen in Fig. 5 that in proximity
of the coercive field of a 100 nm × 60 nm elliptical dot, the (0,0) mode becomes soft: the reversal
starts at the dots edges (where the (0,0) mode has maximum amplitude) and rapidly involves the whole
surface of the dot. In larger dots, instead, the situation is more complicated: usually, either an EM or
a BA mode becomes soft and triggers the magnetization reversal that proceeds through a sequence of
complex intermediate states (including vortices). A series of joint experimental and micromagnetic
studies have been carried on to analyze the connection between soft modes and either continuous or
discontinuous transitions of the magnetization in nanodots16,87,88,89 or nanorings84, 90. The experimental
investigations have been carried out by the BLS technique, following the frequency evolution of spin
wave modes on the applied magnetic field. These works revealed the dynamic origin of the reversal
process and identified the spin mode responsible for the onset of the instabilities that lead to reversal.
At the critical field, the system becomes unstable with respect to this excitation, due to the vanishing
of the magnetic restoring forces: hence, the previous magnetic state is no longer an equilibrium one
and a new final configuration is pursued through a sequence of non-equilibrium states and nonlinear
processes. Actually, the magnitude of the space profile of the specific soft mode is directly connected
with the area of instability (which occurs where the precession amplitude is larger at the transition),
while the mode symmetry provides information about the path followed by the system to accomplish
the first steps of the magnetic transition.
The relationship between eigenmodes and reversal process is even more important if one considers
recent achievements in the field of microwave assisted switching, i.e. the excitation of the precessional
motion of the magnetization by a radio frequency field that is used to achieve a substantial reduction
of the coercive field necessary for the switching.15 In this respect, a detailed knowledge of the
relationship between the characteristics of the eigenmode spectrum and the dot geometry, anticipated
in the previous two sections IIA and IIB, may become extremely relevant. For instance, Fig. 9, taken
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from Ref. 91, shows a color contour plot of the coercive field of an in-plane magnetized elliptical dot
of Py, with lateral size of 65 nm × 71 nm and thickness 10 nm, as a function of both the frequency
and the amplitude of an applied microwave signal. It can be seen that at 2.15 GHz, the coercive field
was reduced by 26% with a rf field amplitude of only 0.4 mT.
Fig. 9 (a) Setup for measuring the hysteresis curves with an applied rf-field. (b) Contour plot of the coercive
field as functions of rf field and frequency. The coercive field is strongly reduced at microwave frequencies in
the region around 2 GHz and decreases as the microwave field amplitude increases. Reproduced from Appl.
Phys. Lett. 95 062506 (2009) with the permission of AIP Publishing. [91]
Similar reductions of the coercive field were also observed in a variety of soft 14,92,93.94,95.96,97,98 and
hard99,100,101,102,103,104 magnetic materials, magnetized either in-plane or out-of-plane, such as thin
films and nanodots. In the latter case, knowledge of the spatial characteristics of the eigenmodes is
important since, as we have seen in Sects. IIA and IIB, spatially non-uniform magnetization precession
is largely present in nanodots. For instance, it was shown in Ref. 15 that for a perpendicularly
magnetized circular magnetic dot, similar to those discussed in Sect. II.A, not only the (0,0) mode,
but also higher order radial modes could be excited by the microwave field, resulting in a notable
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increase of the efficiency of switching. In practice, this is already exploited in current devices for
microwave-assisted magnetic recording, where the rf field is generated by a spin-torque oscillator
integrated in the writing head of the hard disk.105,106,107,108
To conclude this section, we want to mention recent interesting results relative to microwave-assisted
switching in arrays of Py dots acting as nanomagnetic logic elements that were studied experimentally
by coplanar broadband ferromagnetic resonance (FMR) and numerically by micromagnetic
simulations.109 It was found that edge-mode excitation by a microwave field could be a feasible way
to address a specific element in the cluster. In particular, a driver-input magnet pair demonstrated a
significant reduction of the switching field by the excitation of the edge mode located at the uncoupled
end of the driver.
III. Clusters and arrays of closely spaced dots
A. Twins of dots
In this section we move to the analysis of coupled dots and we start from considering what
happens to the modes of rectangular nanodots, with lateral dimensions around 100 nm, when they are
not isolated, as in the previous sections, but are placed in twins, as shown in Fig. 10a, taken from Ref.
66. In that particular study, Brillouin scattering spectra were measured and compared to the
simulations for isolated dots; then, the effect of interdot dipolar coupling on the SW eigenmodes of
twins of coupled dots, placed either head-to-tail or side-by-side, was analyzed. Three kinds of dots
were studied, having a fixed value of the shorter side d=60 nm and three different values of the longer
side, i.e. D=90, 120 and 150 nm, respectively. For each dot dimension, three arrays were prepared,
as shown in Fig. 10a for the case of the dots with D= 90 nm. A first array where the dots are isolated
(or stand-alone, SA), being the separation among adjacent dots chosen to insure negligible interaction;
a second array where the dots are arranged in twins placed head-to-tail (HT); a third array where the
dots are arranged in twins placed side by side (SS). In the two latter cases, the separation of the dots
within each couple is about 20 nm.
According to what was discussed in the previous paragraph, the dots considered here are in
the range of lateral dimensions where the simultaneous presence of two "fundamental modes" of
comparable intensity should occur. In fact, this is confirmed by both the BLS experiments shown in
Fig. 10b and the micromagnetic simulations of the power spectra of the average magnetization excited
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by a uniform perpendicular pulse, reported in Fig. 10c. The two main peaks seen in the spectra
correspond to the mode (2,0), localized in the center, and the mode (0,0) localized at the edges of each
dot. Remarkably, when the dots are put HT (SS), the effect of dipolar interaction causes a blue-shift
(red-shift) of the center mode frequency by a fraction of a GHz with respect to the SA configuration.
Fig. 10 (a) Scanning electron microscopy images of the samples, where the labels HT, SA and SS refer to head-
to-tail, stand-alone and side-by-side dots, respectively. Measured (b) and simulated (c) spectra for an external
magnetic field H=1 kOe applied along the easy direction. Reproduced and adapted from J. Appl. Phys. 117,
17A316 (2015) [66] with the permission of AIP Publishing.
Finally, in the simulations it appears that for the HT arrangement, the edge-mode splits into two
modes: one at roughly the same frequency as in the SA or SS arrangements, localized at the external
edges and another one upshifted by about 1 GHz, localized at the internal edges, where the internal
field is larger due to interdot coupling. Details about the evolution of the measured frequencies with
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the dot length D, for the three sets of samples, as well as the discussion of the characteristics of the
eigenmodes when the field is applied along the hard direction, can be found in Ref. 66.
A similar study concerning twins of rectangular magnetic nanodots (100×50×10 nm3), where the
splitting of the eigenmodes due to the inter-element magneto-dipole interaction, was also performed
in Ref. 110. In this study, the excitation was performed by both a uniform (symmetric) field pulse (as
in the study reported above) and an antisymmetric field pulse, so to excite not only the modes (0,0)
and (2,0) (labelled in the original paper Acoustic Bulk (AB) and Acoustic Edge (AE)), but also the
antisymmetric (1,0) and (3.0) modes (labelled in the original paper Optical Bulk (OB) and Optical
Edge (OE)). In particular, it was shown that for the edge modes the interaction between the edges of
neighbouring elements can exceed that between the edges of the same element, leading to softening
of the mode profile. Moreover, the difference in frequency of the symmetric (acoustic) and
antisymmetric (optical) modes was taken as a measure of the strength of the interaction between
different elements.
B. One- and two-dimensional arrays of dots: magnonic crystals
The effects of dipolar interdot coupling have been also widely investigated in the case of dense arrays
of magnetic elements, constituting what is known as a magnonic crystal. This, in fact, can be formed
starting from uncoupled magnetic elements and making them coupled by magneto-dipolar interaction,
so that the standing waves of individual elements can interact via dipolar coupling. As a consequence,
the degeneracy of the discrete eigenmode frequencies of different elements is removed and magnonic
bands of dispersive, Bloch-type, excitations are formed, with a frequency amplitude that depends on
the particular type of standing spin mode. To this respect, it is evident that the magnitude of these
magnonic effects depends not only on the geometry of the array of dots (lateral size, thickness and
separation between adjacent dots), but also on material parameters. In particular, stronger dipolar
coupling and broader magnonic bands are expected for materials with larger saturation magnetization.
A recent review article12 collected the most relevant contributions this field that are however
concerned with chains111, 112 or 2-d arrays69, 113,114,115,116 of relatively large magnetic dots (hundreds of
nm). Here however, as stated in the introduction, we want to focus on results relative to sub-200 nm
nanodots, so we recall first of all the interesting pioneering study 68 performed by time-resolved
scanning Kerr microscopy to image collective spin wave modes within a 2D array of 80 nm × 40 nm
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magnetic nanoelements arranged in a square matrix with inter-element separation of 20 nm. The most
intense peak in the simulated spectra of the single nanodot was the (0,0) fundamental mode, as
expected. However, if one considers a finite array of 3×3 dots, different peaks appear in the simulated
spectrum. In particular, for a bias field of 197 Oe, as seen in Fig. 11, one finds three peaks: at the
frequency of the highest peak (4.8 GHz) all elements precess in phase. Instead, the peak at the
frequency of 4.5 GHz (5.4 GHz) corresponds to the center row (column) precessing out of phase with
respect to the rest of the elements, while the amplitude of precession is increased in the center row
(column).
Fig. 11 Simulated spectrum of a the 3 x 3 array of nanodots, for a bias field of 197 Oe. The insets show the
magnitude (top) and phase (bottom) for the modes at 4.5 GHz, 4.8 GHz, and 5.4 GHz. Reproduced with
permission from Phys. Rev. Lett., 104, 027201 (2010). Copyright (2010) by the American Physical Society.
[68]
These findings allowed the authors to ascribe the splitting observed in the simulations to collective
nonuniform precessional modes of the 3×3 array. The mode at 4.8 GHz can be classified as quasi-
uniform, while the modes at 4.5 GHz and 5.4 GHz are the collective backward-volume-like and
Damon-Eshbach -- like modes, respectively. Magneto-optical Kerr effect measurement confirmed the
splitting of the fundamental mode peak, proving that the collective modes extend through the entire
measured array. This means that spin waves are confined within the array as if it was a single element
made of a continuous material, so that such arrays appear as tailored magnonic metamaterials for spin
waves with a wavelength much greater than the period of the array.
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Another interesting dense array of small nanodots (240 nm × 80 nm), that has been recently
investigated, was an artificial spin-ice (ASI) system,117 where couples of dots were fashioned into
square ASI-like geometry. Using Brillouin light scattering, the frequencies of excitations were
measured as a function of the magnetic field, showing that the frequencies of spin waves localized at
element edges evolve non-monotonically with magnetic fields and soften at certain critical fields.
From measurements of such critical fields, the authors were able to extract information on the
magnetization reversal of individual islands within the array.
Fig. 12 Simulated precession patterns for a number of relevant eigenmodes existing in the perpendicularly
magnetized pillar consisting of two permalloy layers, 4 nm and 15 nm thick, separated by a Cu interlayer 10
nm thick. Column (a) shows the precession profiles across the thin (light color) and thick (dark color) layers.
Columns (b) and (c) show the dynamics in the thin Pya and thick Pyb layers, respectively. In our coding scheme,
the hue indicates the phase φ of the dynamical magnetization, while the brightness its amplitude. The nodal
lines are marked in white. Reproduced from Phys. Rev. B 84, 224423 (2011), under Creative Commons
License. [49]
26
IV.
Multilayered dots
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In some applications and devices, such as spin torque oscillators or magnetoresistive read heads, the
magnetic elements consist of two or more magnetic layers separated by a non-magnetic spacer.
Therefore, in this last Section we want to consider the case of a multilayered magnetic element. As in
the previous case of single-layer nanodots, while several studies exist for relatively large multilayered
magnetic dots, 63, 64,118 we want to focus here on two recent studies dedicated to either circular or
rectangular mutilayered pillars with sub-200 nm lateral size.
A.
Perpendicularly magnetized circular pillars
The first study was concerned with perpendicularly-magnetized circular nano-pillars, with radius
R=100 nm that were analyzed both experimentally, using mechanical ferromagnetic resonance, and
theoretically, using analytical calculations and micromagnetic simulations.49,119 The pillars consisted
of two permalloy layers, labelled Pya and the thick Pyb, of different thickness ta = 4 nm and tb =15
nm, sandwiching a 10-nm copper (Cu) spacer. Each of the isolated layers present eigenmodes similar
to those introduced in Fig. 1a and 2, but the collective magnetization dynamics could be classified
depending if the precession in the two layers occurs in phase (antibinding modes, or acoustic modes)
or out-of-phase (binding modes or optical modes). Fig. 12 shows a gallery of calculated spatial profiles
for a number of representative modes: the anti-binding (A) and binding (B) eigenfrequencies were
calculated by an analytical model, labelling the modes as Al,r and Bl,r were (l,r) refer to the number
of azimuthal and radial nodal lines. Consistent results were also obtained by micromagnetic
simulations. (Please note that this is the same labelling scheme anticipated in Fig. 1a for
perpendicularly magnetized dots, but here the two indices are interchanged). One may notice in Fig.
12 that the binding (lower energy) mode B always corresponds to a larger precession amplitude in the
thicker layer, with the thin layer vibrating in antiphase, and vice versa for the anti-binding mode A.
In particular, the fundamental binding mode B0,0, has an amplitude of precession that is three times
larger in the thick layer, while the amplitude of the fundamental anti-binding mode A0,0, is eight times
larger in the thin layer than in the thick one. The authors found a very good agreement between the
measured and the simulated dynamics, as illustrated in Fig. 13. Noteworthy, they found that a linearly
polarized, spatially uniform rf field, can only excite modes with zero azimuthal index (left panel of
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Fig. 13), while excitation of l=1 azimuthal modes can be achieved introducing an orthoradial (i.e.
azimuthal) stimulus, for instance provided by an injected current (right panel of Fig. 13). This selective
excitation of a subset of modes with the proper spatial symmetry is similar to what already observed
for single-layered dots of Sect. IIA and II.B.
Fig. 13 Left panel: (a) simulated spectral response to a uniform excitation field directed along the x-axis; (b)
experimental spectrum measured by mechanical FMR exciting the nanopillar by a homogeneous rf magnetic
field at 8.1 GHz. Right panel: (a) simulated spectral response to an orthoradial excitation field; (b) experimental
spectrum measured by mechanical-force microscopy for an rf current excitation. Reproduced from Phys. Rev.
B 84, 224423 (2011), under Creative Commons License. [49]
B.
In plane magnetized bilayer: the read head
A couple of recent papers were devoted to a detailed analysis of the spin wave eigenmodes of a spin
valve sensor for GMR read heads120,121, with lateral dimensions as low as those exploited in state of
the art devices (30 nm × 35 nm), whose detailed composition and magnetization orientation is
sketched in Fig. 14a. In particular, one may notice that the free layer (FL) has a magnetization vector
rotated by 90° with respect to the reference layer (RL), thanks to the application of an external field
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(that in real GMR sensors is provided by an integrated permanent magnet). Here, it was assumed that
the FL is exposed to a bias field Hb= 600 Oe, uniform across the layer, that is sufficient to rotate the
FL magnetization along the hard direction (x-axis), as seen in Fig. 14a. Both the eigenmodes spectrum,
averaged over the whole set of discretized cells, and the spatial profile of each eigenmode within each
layer could be obtained by micromagnetic simulations, applying a spatially uniform field pulse
perpendicular to the plane of the layers. The scheme adopted for labelling the modes is based on that
already anticipated in Sect. II, i.e. two indices (nx, ny) are used to indicate the number of nodal lines
perpendicular or parallel to the direction of the static magnetization, respectively. Here the situation
is more complex, because there are multiple layers and the static magnetization in the FL is orthogonal
to that in the RL. Therefore, the authors introduced the tag 'FL' or 'RL' before the two indices (nx, ny)
to identify which is the layer where the oscillation is preferentially localized. Using this scheme, it is
seen in Fig. 14b that, despite the relatively small lateral dimensions of the considered sample, the
spectrum is relatively rich and at least five well defined eigenmodes are seen in the frequency range
up to 20 GHz. The solid and dashed curves in Fig. 14b refer to the spectra calculated averaging over
the discretized cells of either the FL or the RL, respectively. It is clear that the dominant peak at about
2 GHz, labelled FL(0,0), corresponds to the fundamental mode of the FL, characterized by no nodal
planes and by a nearly synchronous precession of the magnetization all over the layer surface.
Remarkably, even if the lateral dimension of the pillar is only 30 nm, this is still several times larger
than the exchange correlation length (about 4.5 nm) so that the inhomogeneity of the internal field
induces a marked localization at the edges orthogonal to the static magnetization (longer edges). One
can notice that this FL(0,0) mode has a remarkable amplitude also in the RL, because of the strong
interaction between the two layers. However, in the RL the static magnetization is orthogonal to that
of the FL, so this mode has maximum amplitude close to the two edges orthogonal to the y-axis
(shorter edges). Moving to higher frequency, one finds at 7.9 GHz the fundamental eigenmode of the
RL, labelled RL(0,0), localized at the shorter edges. This has a much smaller amplitude in the FL,
because the thickness of the RL is less than a half compared to the FL, so it cannot drive efficiently
the motion of the FL. At about 9.7 GHz and 15.3 GHz one can see the modes labelled FL(1,0) and
FL(0,1) that are characterized by the presence of a nodal line either perpendicular or parallel to the
direction of the RL magnetization, respectively. These two modes, whose amplitude is concentrated
in the FL, can be considered as the antisymmetric counterpart of the FL(0,0) mode and are shifted to
higher frequency mainly due to the exchange-related stiffness caused by the presence of the nodal
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planes. Finally, at about 18.4 GHz one finds the RL(1,0) mode, that is mainly localized in the RL and
is the antisymmetric counterpart of the RL(0,0) mode. Its amplitude is also relatively intense in the
FL, because it is localized in the same region of the FL(0,1) mode, that is not too far in frequency. In
the original study120 it was also analyzed the effect of the non-uniformity of the bias field produced
by a realistic permanent magnet, showing that it reduces the inhomogeneity of the modes across the
layers. Moreover, analysis of the influence of the discussed eigenmodes on the magnetoresistive
readback signal revealed that when the amplitude of the precession of the magnetization exceeds a
few degrees, nonlinear effects lead to the appearance of harmonics and peaks at the difference and
sum of the main modes FL (0,0) and RL (0,0). The peak at the frequency difference contributes to a
low-frequency tail, increasing the low-frequency noise that can somehow limit the optimum
performance of read-head devices.121
Fig. 14 (a) Sketch of the simulated magnetic tunnel junction (MTJ) read head. The black arrows represent the
orientation of the magnetization in each layer, while the yellow arrow is the direction of the bias field Hb and
ABS indicated the air bearing surface. (b) Simulated power spectra of the FL (solid line) and RL (dashed line)
after the excitation pulse in presence a uniform bias field of Hb=600 Oe. The colored panels represent the spatial
profile of the dynamical magnetization component perpendicular to the sample plane of the main eigenmodes,
expressed as the product of the modulus of the magnetization by the sign of the phase. The label on the right
side of each panel refers to the layer where the spatial profile is calculated. Reprinted with permission and
adapted from J. Phys D: Appl. Phys. 50, 455007 (2017). Copyright (2017) by the Institute of Physics Publishing
(IoP). [120]
30
V.
Summary and outlook
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In conclusion, we have reviewed the characteristics of the eigenmode spectrum of in-plane and out-
of-plane magnetized dots with lateral dimensions ranging from a few tens to a few hundreds of
nanometers, that is typical of recent and forthcoming devices. We have shown that the eigenmode
properties are influenced by different effective fields, derived from different energy terms (such as
exchange, magnetostatic and anisotropy energy, as well as the chiral DMI contribution coming from
a heavy metal underlayer) and one can distinguish different families of modes, labelled with two
indices, according to the number of nodal lines. Particularly interesting is the case of in-plane
magnetized dots: as the lateral size is reduced below about 200 nm, the exchange energy starts to play
a significant role and one observes that the 'fundamental' character is progressively transferred from
the center mode to a second mode having maximum amplitude at the edges of the dot. The amplitude
of these two modes is comparable intensity in a range of lateral sizes around 100 nm that is typical of
current devices, where the coexistence of two resonant frequencies may have relevant consequences
in terms of coupling to external stimuli or noise characteristics. More generally, a detailed knowledge
of the eigenmodes spectrum and its evolution with the dot dimensions is important because its
characteristics not only determine the small amplitude dynamics, but also influence nonlinear
phenomena such as switching and large amplitude oscillations driven by an applied field or spin
transfer torque. When the dots are arranged in clusters or in dense arrays, as in magnonic
metamaterials, the band of propagating collective excitations can be seen as resulting from the lifting
of the degeneracy of eigenmodes of the single dot, thanks to dipolar coupling. Finally, for multilayered
dots, currently exploited in spin-torque oscillators or magnetic memories, a correct identification of
the eigenmodes can be achieved only considering that both magnetic layers take part in the field-
induced or current-induced magnetization dynamics. On the other hand, one finds that the amplitude
of coupled modes may be either equally distributed in the layers or concentrated in one of the layers,
depending on the geometry and the strength of the coupling. This can affect the magnitude of the spin-
transfer torque in a nanopillar or the magnetoresistive signal in a read-head sensor, since they depend
on the coupled dynamics of all the magnetic layers.
31
Acknowledgement
Applied Physics Review 6 (3) 031304 (2019)
Financial support from the EMPIR programme 17FUN08-TOPS, co-financed by the Participating
States and from the European Union's Horizon 2020 research and innovation programme, is kindly
acknowledged.
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|
1802.02034 | 1 | 1802 | 2017-12-18T14:08:33 | Synchronicity and pure bending of piezoelectric bimorphs: a new approach to kinetic energy harvesting | [
"physics.app-ph",
"eess.SP"
] | Kinetic energy harvesting with piezoelectric bimorphs has attracted considerable research interest in recent years. Many works have been dedicated to the modelling and optimisation of the cantilevered geometry to increase power density, bandwidth, etc. The increased efficiency coming from the use of trapezoidal beams has been recognised, but little has been done to produce the same uniform strain within the most commonly available rectangular beams. This work proposes a new approach via a smart compliant structure which permits to deform a set of bimorphs in pure bending. Furthermore, since the deflections are synchronous, the power signals produced are in phase and power conditioning is simplified and made more efficient. The kinematic requirements for uniform strain are discussed, the novel structure is proposed and modelled with finite elements, a prototype is presented and characterised to support the modelling. The proposed structure induces almost perfectly uniform strain in the piezoelectric beams for all useful rotation angles, demonstrating that, compared to a traditional cantilever, twice as many charges can be produced when the same maximum strain is applied to the material. Synchronicity is also experimentally verified for the prototype, as power signals resulting from impact excitation are observed to be in phase. The principle of synchronous pure bending via helper structures can be applied in general to increase the performance of piezoelectric energy harvesters. | physics.app-ph | physics | Synchronicity and pure bending of piezoelectric
bimorphs: a new approach to kinetic energy harvesting
School of Engineering, Newcastle University, Newcastle upon Tyne, NE1 7RU, UK
Michele Pozzi
Keywords: pure bending, uniform strain, energy harvesting, power harvesting, synchronous
vibrations, rotational vibrations
Abstract
Kinetic energy harvesting with piezoelectric bimorphs has attracted considerable research
interest in recent years. Many works have been dedicated to the modelling and optimisation of
the cantilevered geometry to increase power density, bandwidth, etc. The increased efficiency
coming from the use of trapezoidal beams has been recognised, but little has been done to
produce the same uniform strain within the most commonly available rectangular beams. This
work proposes a new approach via a smart compliant structure which permits to deform a set
of bimorphs in pure bending. Furthermore, since the deflections are synchronous, the power
signals produced are in phase and power conditioning is simplified and made more efficient.
The kinematic requirements for uniform strain are discussed, the novel structure is proposed
and modelled with finite elements, a prototype is presented and characterised to support the
modelling. The proposed structure induces almost perfectly uniform strain in the piezoelectric
beams for all useful rotation angles, demonstrating that, compared to a traditional cantilever,
twice as many charges can be produced when the same maximum strain is applied to the
material. Synchronicity is also experimentally verified for the prototype, as power signals
resulting from impact excitation are observed to be in phase. The principle of synchronous
pure bending via helper structures can be applied in general to increase the performance of
piezoelectric energy harvesters.
Introduction
The aim of this paper is to present a smart compliant structure for piezoelectric energy
harvesting which ensures the synchronicity of power signals produced by an array of
bimorphs, while also achieving pure bending to maximise the utilisation of the material.
Manufacturers of microelectronic components have been increasing their effort to reduce
power consumption of devices. Starting a few decades ago, power requirements of
microcontrollers have decreased to the point that it has become meaningful to seek to power
small intelligent system by using stray energy present in the environment where they operate.
Energy harvesting (or scavenging as it was more commonly called in the early days) has
therefore developed into an independent area of research with the aim of enabling the
deployment of energy autonomous systems. Due to the variety of stray energy present in
different environments, a wide range of energy harvesting techniques and materials are being
researched: thermoelectric generators [1], electrets [2], electromagnetic induction [3] and so
forth.
Leveraging on the presence of movement in many environments, considerable effort is being
devoted to kinetic energy harvesters, particularly using electromechanical transducers like
piezoelectric devices.
There are many examples in the literature of works aimed at improving different aspects of
kinetic energy harvesters. A range of low profile and small footprint devices are reviewed in
[4]. Recently, the response bandwidth of vibrational harvesters has attracted considerable
interest: since environmental vibrations may fall over a wide range of frequencies, harvesting
effectiveness can be increased with wideband devices. An array of beams, each with its own
natural frequency and together covering the desired bandwidth, has been used in several
studies [5,6]. Frequency tuning has been demonstrated by changing the stiffness of the
cantilevered beam by exploiting magnetic interaction [7]. A wider operating band has also
been achieved by introducing non-linear response and chaotic behaviour [8,9].
There are fewer works dedicated to improving the effective use of the piezoelectric material.
The advantages of trapezoidal beams, and the uniform strain that can be achieved within
them, have long been recognised for actuators [10] and for energy generation [11]. Often
researchers have extended the vibrating beam by adding inert materials, extensions and
extended seismic masses [12,13], with the intent of increasing the bending moment applied at
the tip of the beam. The fabrication of more complex beams with varying thickness was also
proposed to increase the strain uniformity and thence energy harvesting performance [14].
Air-spaced piezoelectric cantilevers have also been offered as an alternative to conventional
bimorphs with the advantage of producing, if well designed, higher voltages and more
uniform strain [15]. More recently, the principle of four-point bending has been applied to
vibrational energy harvesting [16]. The common goal of the works just described is a greater
uniformity of strain within the piezoelectric material.
The state of pure bending deformation is of interest in several other research areas and efforts
are recorded to devise mechanisms that permit testing of materials in pure bending. In many
cases, the mechanics is complex. In textile testing, the Kawabata Evaluation System for
Fabrics (KES-F) is used. Relatively simple mechanisms have been devised to test materials of
interest to cryogenics, although they only approximate the desired deformation [17,18]. More
complex systems for biomechanical testing of spine segments have been proposed [19,20].
The testing systems for larger samples of generic shape are even more complex [21]. These
few examples have been reviewed to highlight the difficulty of producing pure bending; when
mechanisms are designed for testing of materials, high complexity is acceptable. For an
energy harvesting application, the structure must be much simpler to minimise costs,
dimensions, weight and energy dissipation. The present paper offers a novel approach to
address this issue.
The majority of energy harvesters presented to date focuses on a single piezoelectric bimorph.
However, in many applications there is an opportunity to place more transducers, which could
work in concert to maximise the energy extracted from the environment. If they are active at
the same time, the issue of synchronicity arises. Since the out-of-phase vibration of several
transducers would yield a partial cancellation of the signal, with electrical energy produced by
one re-injected into another, system efficiency is compromised. To avoid signal cancellation,
in the past individual rectification has been added to each bimorph before further power
management or storage [5,22].
The issue of synchronicity of power signals has come to the authors' attention when
researching the Pizzicato series of energy harvesters. These are rotational harvesters featuring
several piezoelectric bimorphs mechanically [23,24] or magnetically plucked [22]. Since the
plucking events are uncorrelated, the signals generated by the bimorphs are in general out of
phase. Individual biomorph's rectification was therefore necessary before further power
management. This has several disadvantages, including cost and complexity of the electronics
and losses in the numerous rectifying bridges. A better power management, based for example
on synchronized switch harvesting on inductor (SSHI) or single supply pre-biasing (SSPB)
[25], would be even more costly and it is impractical to have identical copies of such circuit
for each of the many bimorphs an application might rely on. It is therefore necessary to devise
a way to synchronize the outputs of the many piezoelectric devices in a rotational harvester so
that they work in unison and provide outputs without phase shifts between them. The
proposed solution relies on a ring onto which the tips of the bimorphs are attached, so that
when this rotates with respect to a central hub (holding the roots of the beams), the vibrations
of the bimorphs are synchronised. Whereas in the past [23] the issue of uniform strain was
addressed by using trapezoidal bimorphs, the structure proposed here has the capability of
bending rectangular beams into arcs, achieving near uniform longitudinal strain, together with
synchronicity.
Geometry for pure bending
Since excessive tensile stress levels reduce the operating life of ceramic piezoelectric
transducers by introducing cracks and, eventually, causing failure of the material, it is
worthwhile to consider the stress/strain distribution within a piezoelectric beam used for EH.
A geometry where there is a stress concentration in one small area implies that to protect it
from premature failure, other regions will be subject to lower than optimal stress levels. This
reduces performance as the electrical output will be determined by an averaged value of
strain. Considering bimorphs or monomorphs, which work in 31 mode, the ideal situation is
to have a uniform stress/strain field along the beam (direction 1); however, the traditional
cantilever configuration has zero strain at the tip. Within a bending beam, the maximum strain
will be observed at the external surfaces of the device, decreasing as we move inwards
towards the neutral surface. The tensile strain ε at the convex external surface of a beam with
rectangular cross section can be estimated as the product of half-thickness θ and curvature:
ϵ(ξ)=θ
d2 w
d ξ2
[1+( dw
d ξ)2]3 /2
1
where ξ is the longitudinal coordinate and w(ξ) is the deflection of the beam from the relaxed
horizontal position; all coordinates are adimensionalised. Note that for small deflections the
omission of the denominator leads to an acceptable approximation.
Starting from standard equations found in textbooks for the shape of: a vibrating cantilever, a
statically deflected cantilever and a beam bent into an arc, respectively, it is easy to show that
the expressions (2), (3) and (4) are valid. These were normalised so that the same value of
strain is present at the root, ε(0) = ε0:
• first mode vibration of a uniform cantilevered beam (k1 ~ 1.875):
w (ξ)=
ϵ0
2k1
2θ[cosh(k1 ξ)−cos(k1 ξ)−( cosh k1+cosk1
sinh k1+sin k1)(sinh (k1 ξ)−sin (k1 ξ))]
• static deflection of a cantilever due to a point load at the tip, also approximating the
dynamic deflection in the presence of a large point mass at the tip:
w (ξ)=
ϵ0
6 θ
(3 ξ2−ξ3)
• pure bending deflection of a uniform beam (boundary loads are such as to deform the
beam into an arc):
w (ξ)=ρ−√ρ2−ξ2
with: ρ= θ
ϵ0
The corresponding shapes are plotted in Figure 1 for θ=0.0125 and ε0 = 0.001, together with
the tensile strain along the beam calculated, in each case, with expression (1). Note that in
2
3
4
piezoelectric beams the tensile strain should be kept below 0.001 at all times to reduce the
probability of early failure [26].
Figure 1: Deflection of a beam in a selection of bending configurations and corresponding strains
at the external convex surface.
Observation of the figure reveals that whereas the strain in the arc is uniform, for a static
deflection it decreases linearly from the maximum at the root to zero at the tip; for first mode
of vibration, the strain decreases even faster. In other words, for shapes different from an arc
the average strain is half (or less) of what it could be; the charges extracted from the material
are correspondingly lower. Yet another point of view is to state that a design that uses the
piezoelectric material more effectively by implementing pure bending may be able to provide
the same harvested energy by using a third of the amount of material, which could mean
reduced cost, mass and volume.
Figure 2: Geometry of the beam bent into an arc
Having established that deforming the beam into an arc is the most material-efficient route to
piezoelectric energy harvesting, the objective is to devise an arrangement to produce the
required end-loads. Figure 2 illustrates the relevant geometry, representing the beam bent
while keeping the end at N fixed (equivalently, we could think of M and N being rotated by
equal and opposite angles). With reference to the figure for the meaning of the symbols, some
key relations, derived from elementary geometry, are:
ϵ=
t
R
l
α=
R
2l
α sin( α
2 )
ϵ sin( lϵ
2t)
2t
r(α)=
r(ϵ)=
5
where ε is the maximum tensile strain present, found at the external surface of the beam. The
most important observations are that the distance r between the tip (M) and the root (N)
changes with deflection, implying that a simple rigid lever pivoted in N cannot be used to
guide M along the correct path. Also, the tangent to the beam in M' intersects MN in a point
Q' which moves along the beam with α, so neither that point is a good candidate as a pivot.
Two key geometrical conditions must be satisfied: the ends rotate, assuming an angle α/2
from the line connecting them, and the distance between the ends reduces, according to
expressions (5). The aim is to design a structure capable of satisfying, with good
approximation, both requirements.
Pure bending in a rotational device
In a rotational harvester like the Windmill [27] or the Pizzicato [22], piezoelectric bimorphs
are cantilevered and placed radially, like spokes on a wheel; the relative rotation of external
ring and central hub makes them vibrate or deflect. Neither device above attained both
synchronicity and pure bending. The general problem stated in the introduction is therefore
here modified for applications where the input energy takes the form of relative rotation. As
discussed in the previous section, the structure must impose the same and opposite rotation on
the two ends of the beam and accommodate the reducing distance between them. The
structure must also permit the synchronous excitation of an array of bimorphs. The sketch of
an arrangement with the potential of producing the required rotations is found in Figure 3.
The bimorph is held between a rotating hub and an anchor which is hinged in P to an external
ring, held fixed. A rigid rod connects a point A on the anchor to a point B on the hub, so that
when the latter rotates, it forces a rotation of the anchor around P. Since this is only a sector of
a circle, several bimorphs can be similarly mounted and simultaneously excited. With
reference to the sketch for the labelling of the points, before rotation of the hub this equality is
satisfied:
and after the hub has rotated by an angle φ:
⃗A B= ⃗A P+ ⃗PO+ ⃗O B
⃗A'B'= ⃗A'P+ ⃗P O+ ⃗OB'
6
7
The rotational requirement means: as the hub rotates clockwise (CW) by φ, the anchor
holding the tip of the bimorph rotates counter-clockwise (CCW) by φ. This translates into the
following transformations:
sin ϕ
⃗A'P=[cos ϕ −sin ϕ
⃗OB'=[ cosϕ sin ϕ
cosϕ ] ⃗A P
−sin ϕ cosϕ] ⃗O B
8
9
If the lengths of vectors
points A and B will couple the two rotations to satisfy the requirement – when the hub rotates,
the anchor will be forced to rotate by the same angle in the opposite direction.
⃗A'B' are equal, then an inextensible rod connecting
⃗AB and
Figure 3: (a) conceptual sketch of structure for rotational pure bending: thinner lines after rotation;
(b) colormap of strain in the connecting rod according to location of end A.
To explore the locus of the points where the above requirement is satisfied, a simple
MATLAB script was developed which explores 'reasonable' locations for point A once both
the required total rotation φ and the location of B are set. In principle, B could be anywhere,
provided that it is fixed to the hub; it was selected as lying on its circumference to simplify
manufacturing. It was observed that the locus changed with φ, particularly at large angles.
Figure 3(b) illustrates a typical result, obtained with dimensions specific for the prototype
developed later and for a rotation of 40 mrad (estimated to induce a uniform strain just over
0.1%)
In Figure 3(b), we notice two nearly circular regions where the strain rises steeply in absolute
value to exceed 10%; care should be exercised to keep A far from these because of the
extreme dependence of strain on exact location. Points in the upper-right region experience an
elongation of the rod connecting A to B (positive strain), whereas a contraction is observed in
the lower-left region (negative strain). For practical reasons, it is better to have A close to the
anchor (as in Figure 3). In keeping with the current aim, the region near the anchor is within a
uniform shade of colour just above 0% strain. These results apply to a situation which is in
many ways ideal and not realisable in practice; nonetheless, they suggest that it is possible to
find a location for point A such that the desired rotations of the beam's ends will leave ‖ ⃗AB‖
roughly unchanged. When the direction of rotation is reversed, regions close to the anchor
will be in compression (although there is no perfect symmetry). The resulting stress (positive
or negative) will allow a connecting rod to develop the required forces. A final design should
be symmetric, with criss-crossing rods.
As mentioned, the locus of points satisfying the condition ‖ ⃗AB‖=‖ ⃗A'B'‖ changes with the
angle of rotation; this is detrimental as it means that, as the beam deforms, it goes through
stages when the strain is not uniform. However, it is observed that variations are not
significant as long as rotations are limited to several degrees. This will be further addressed in
the next section.
Results as in Figure 3 provide a starting point, but more accurate design needs to be
performed with the aid of Finite Element Analysis (FEA). Corrections are needed to account
for the compliance of the connecting rods, for example. Furthermore, more compliance needs
to be built into the anchor, as necessary to accommodate the change in distance between the
two ends of the beam during bending. Geometrical analyses also assume that all pivots are
ideal, whereas the FE model is able to describe the behaviour of the compliant hinges that
replace them in a real structure.
FE modelling of rotational device
The structure designed to apply synchronous pure bending to a set of piezoelectric bimorphs
is illustrated in Figure 4 (only one 45° sector of a full 8-element array is shown and
modelled). The actual design is a 3D layered structure, where the bimorphs are sandwiched
between two layers which provide the connecting rods (a prototype will be presented in the
next section). The structure shown was designed for manufacture from sheet material. The
plane strain approximation was used in the 2D FE model, because components that
experience important strain are significantly thick, while they remain slender in the plane. The
simple pivot between anchor and outside ring has been replaced by a compliant elliptical
hinge, which permits rotation but also a certain degree of extension towards the hub. A
technicality of the FE model is that the rods are modelled only in part and where they would
cross and overlap the piezoelectric beam they are separately joined by connectors
(mathematical constraints that behave like stiff connecting beams, by transferring forces and
moments).
Figure 4(b) shows the longitudinal strain (along the vertical axis) in the bimorph as deformed
by a rotation of 25 mrad. The colouration reveals that the strain is uniform along the beam and
symmetric with respect to the neutral surface, as desired. The extremes of the colorbar (strain
of ±0.13%) are observed only in the areas next to the clamps and are unlikely to appear in a
real device where corners are less sharp and a thin layer of adhesive might be present. For not
being central to the work, little effort has gone into optimising the reliability of the structure,
nonetheless Figure 4(c) is reported to show that the von Mises stress in it (modelled as a
2 mm thick PMMA sheet) suggests a minimal risk of failure with less than 30 MPa observed
everywhere but around a few FE nodes.
The uniformity along the beam of the longitudinal strain is even more manifest in the plots of
Figure 5 (top row). The strain through the thickness of the beam is plotted for a selection of
cross sectional lines along the beam. As the angle of rotation is increased from 12.5 to
100 mrad, the maximum strain observed increases as expected, still remaining fairly uniform
along the beam (lines closely grouped) and symmetric with respect to the mid surface.
(a)
(b)
(c)
Figure 4: (a) mesh of the FE model, from which the geometry can also be seen; solutions
when α=25 mrad follow: (b) longitudinal strain (along the vertical axis) in the deformed
beam, superimposed to the undeformed structure; (c) von Mises stress within the supporting
structure.
In summary, the results reported in this section demonstrate that it is possible to design a
compliant smart structure than imparts pure bending deformation onto piezoelectric beams. A
circular sector like this could be repeated several times (eight in the FE model above) and
since the outer ring will be rigid, all beams will be deformed in synchronicity.
It is well known that a column in compression buckles into a shape which is not an arc but a
half-sine; hence pure bending cannot be achieved by simply forcing the end of the beam to
follow the locus r(α). The strategy of the structure presented above is to prescribe the rotation
of the ends, and leave the approach of the two ends as a simple consequence, by having a
compliant anchor.
As a design guideline, it was observed that the stiffness of the connecting rod is key to a
uniform strain: if the rods are too compliant, the anchor does not rotate sufficiently and lower
strains are seen at that end; vice versa if lower strains are observed near the hub, the rods
should be less stiff or point B (Figure 3) should be closer to the bimorph.
Figure 5: plots of the longitudinal strain in the beam along parallel lines starting 1 mm above the hub
and 3 mm apart; x is the transversal coordinate, with x=0 representing the middle of the beam. Top
row: with connectors. Bottom row: without connectors. Angle of rotation indicated.
The extreme situation is when the rods are completely removed, as in the lower row of plots
in Figure 5. The strain progressively decreases moving from the hub to the external ring,
confirming that the deflection is similar to that of a cantilever with tip load. Note that here the
rotation in each case analysed has been set to 64% of the with-rods equivalent, to achieve
comparable total charges. This design retains the advantage of synchronicity, but with
approximately a third of energy harvesting capability (for comparable maximum strain). The
connecting rods are an essential feature of the smart structure proposed.
Table 1. Summary of total charge available and maximum strain at the outer surface in three
positions along the beam bent into an arc (with connecting rods) and approximating a
cantilever with tip loading (without rods), for a set of four rotation angles. The entries have
been sorted by ascending charges, in view of energy harvesting applications.
Connecting
Tensile strain
Tensile strain
near hub [/10-4]
Tensile strain
at middle [/10-4]
near anchor [/10-4]
Charge/angle
ratio [µC/rad]
rods
No
No
Yes
No
Yes
Yes
No
Yes
Angle
[mrad]
8.0
16.0
12.5
32.0
25.0
50.0
64.0
100
Charge
[µC] ↑
0.72
1.44
1.46
2.88
2.90
5.69
5.71
10.99
4.54
9.09
3.89
18.2
7.97
16.6
36.6
34.4
2.26
4.52
4.22
9.04
8.34
16.26
18.00
31.34
-0.02
-0.04
4.55
-0.13
8.71
15.9
-0.67
28.2
90
90
117
90
116
114
89
110
Table 1 collects the surface strain calculated by FEA in three regions (near the hub, near the
anchor and half way) and the corresponding total charges for a selection of conditions. Data
confirm earlier statements that to generate the same amount of charge, the maximum strain in
pure bending needs only be about half that at the root of a cantilever. The last column in the
table, giving the ratio of charges over angle, is of interest for applications where the input
angle is limited. Comparing the values with and without connectors, we notice that for the
same rotation angle we obtain approximately 30% more charges with connectors than
without.
Prototype
A prototype was manufactured to verify the feasibility and the advantages of the ideas
expressed thus far. As illustrated in Figure 6, it is composed of three layers: the external ones
are laser cut from a 3 mm thick PMMA sheet and provide the connecting rods, whereas the
middle layer holds the piezoelectric bimorphs. The smart structure is designed to
accommodate up to 8 bimorphs, although, with no detriment to the objectives, only four were
available to be installed. Unfortunately, two of these resulted permanently short circuited after
assembly and therefore their signal could not be acquired. The bimorphs are parallel devices
(Steminc, SMBA25W7T05PV) with an internal metal substrate of thickness 0.25 mm
sandwiched between two piezo-active layers of thickness 0.125 mm. The material is a soft
PZT branded SM411 (nominally equivalent to PZT-5J). The bimorphs are 7.1 mm wide and
25 mm long; approximately 2.5 mm of this length are embedded at either end for support,
leaving 20 mm of active length. The two external electrodes were shorted together to form a
two-terminal device with the substrate electrode. Two of these bimorphs, in diametrically
opposite locations around the centre, were labelled PZT#2 and PZT#4 and became the focus
of the measurements. PMMA was selected for anchors and connecting rods for its strain
capabilities, availability and ease of manufacture via laser cutting. The faithfulness of the
geometry to the FE model was limited by practical considerations and issues; in particular,
details of anchors, rods and hinges are on the same scale as the accuracy of the laser cutting
process.
(a)
(b)
Figure 6: (a) ¾ view of the harvester (b) photograph of the prototype.
Results
The first experiment measures the dependence of the charges produced by a bimorph on the
angle of rotation. A torsional bar was fixed to the hub and moved between the limits of a
series of four stoppers, designed to give controlled and reproducible maximum rotations. The
angle of rotation in each direction was calculated from the linear displacement of the edge of
the bar measured with a Dial Test Indicator, yielding an estimated uncertainty below 0.5 mrad.
The charges flowing from one electrode to the other during each rotation were measured with
an electrometer (Keithley 6517B); they are reproduced for one of the bimorphs in the top left
graph of Figure 7. Note that the absolute values of the charges for the two directions of
rotation are not equal due to the imperfect centring of bar and stopper. Figure 8 summarises
the results for a selection of angles.
Figure 7: (left column) charge vs. time in quasi-static tests. The hub was rotated alternatively CW
and CCW, covering a total of 30.5 mrad, with brief pauses in the relaxed position; (right column)
response of two bimorphs when prototype is subject to impact excitation; (top row) with connecting
rods; (bottom row) after snapping-off connectors.
The torsion bar was then struck to simulate impact excitation. Each bimorph was connected to
a separate channel of the DAQ (NI 9221), so that the only impedance between its terminals
was the input impedance of the DAQ (nominally 1MΩ//5pF). In all cases the two active
bimorphs responded with similar amplitude and with the same frequency and phase. In
Figure 7 one such event is plotted (top right), which demonstrates that synchronicity is
achieved.
Figure 8: charges vs. rotation angle for slow controlled rotation.
Analysis and Discussion
With the objective to determine if the bimorphs were bent into an arc or as tip-loaded
cantilevers, macro photographs were taken of the beams under deflection and image
processing applied to reconstruct their shape. Figure 9(a) reproduces a representative image: a
Region of Interest was identified, converted from RGB to grayscale and then subtracted to its
own copy shifted by one pixel in each direction to reveal the contour of the piezoelectric
beam. The result was converted to black and white with suitable threshold to try to preserve
only the contour of the beam (all this processing was performed manually within the GIMP
software). The bitmap (.PNG) was then imported into MATLAB and the coordinate of each
black pixel (defining the contour) were extracted into an array. The array was rotated in the
2D plane so that the interpolating line would be horizontal. This is for convenience, as only
when placed horizontally (or vertically) it is possible to zoom in on the other direction and
observe the curvature. At this point, the points defining the two edges of the beam were
merged by translating one vertically by their average distance, to yield a single set of data.
The resulting array x contained all the meaningful points available.
Fitting was performed with the lsqnonlin function of MATLAB 2015b, which finds the
parameters c in a user-supplied function f which minimise the norm:
‖f (c; x)‖
min
c
10
In an implicit curve fitting application, x is the set of points and the function f(c; xi) gives the
distance from a generic experimental point xi to the parametric curve. The optimisation is in
the least-square sense.
As known, the equation that gives the static deflection of a cantilever with a load at the tip is
y=
F
E I( L x2
2 −
x3
6 )
11
where F is the tip load, L the length, E the Young's modulus and I the second moment of area
of the cross section. Since equation (11) makes clear distinction between the two coordinates
and assumes the root in (0,0), it is valid only for a correctly aligned coordinate system and
hence it is not suitable for fitting to the set of points extracted from a photograph. It was
therefore generalised to allow the fitting to include roto-translations represented by:
y]=[cosβ −sin β
[ x
cosβ ]⋅[ x'−c1
y '−c2]
sinβ
where (c1,c2) are the coordinates of the root in the experimental data and β is the angle of
rotation.
Therefore the function providing the vector whose norm is to be minimised is written
(dropping the primes):
12
13
f (⃗c ; x , y)=c3{L
2 [(x−c1)cos c4−( y−c2)sin c4]2−
1
6 [(x−c1)cos c4−( y−c2)sin c4]3}
−[(x−c1)sin c4+( y−c2)cos c4]
where, additionally, c3 = F/EI contains the curvature and c4 is β, the (opposite of the)
orientation of the tangent to the cantilever at the root. The location of the root was constrained
to be within ±0.08 mm of the point that was identified on the photograph as representing the
root. The range of ±0.08 mm is the based on the estimated uncertainty in the location of
points.
Obviously, when fitting an arc of experimental points onto a circumference, rotation needs not
be added, and the only fitting parameters are the centre (a1,a2) and the radius a3; the
corresponding function is:
2
f (⃗a; x , y)=(x−a1)2+( y −a2)2−a3
14
The results of these analyses are summarised in Table 2 and in Figure 9(b). The table reports
the fitting parameters as defined above and the mean norm, representing the average distance
of each experimental point from the parametric curve. The mean norm was computed using
the dsearchn function of MATLAB, applied between the experimental data and a very
dense set of points computed from the fitting curve.
Figure 9: (a) sample photograph with superimposed identified outline; (b) fitting of cantilevered beam
deflection and arc to experimental points (dark pixels on the contour of (a)); top-down: convex, in rest
position, concave deformation.
Although the mean norms in the table are smaller for the arc than for the cantilever, they are
too close to confidently conclude from them that the prototype structure is deflecting the
bimorphs into arcs: the data points from the photographs are compatible with both shapes
considered. In other words, the results just described are null, in the sense that they were
unable to answer the research question that motivated them; they are reported for
completeness.
Table 2. Fitting parameters for the curves in Figure 9(b); refer to equations (13) and (14) for
their meaning. The status is given with reference to the figure. The last column is the average
distance of the experimental points to the fitted curve.
Status
c1 [mm]
c2 [mm]
convex
rest
concave
31.9
32.0
31.9
1.97
1.98
1.92
c3 [1/mm2]
-9.6E-5
-2.3E-5
4.9E-5
c4 [mrad]
a1 [mm]
a2 [mm]
a3 [mm]
norm [µm]
29
5.1
-13
20.3
23.2
21.6
-344
346
-1498
1500
692
690
11.2
10.8
11.5
11.2
11.3
11.3
It was therefore decided to snap off the connecting rods to measure the intrinsic gain produced
by their presence. Data plotted in Figure 7 and partly already discussed, were collected just
before and just after such operation, to ensure experimental conditions were not altered. Each
of the graphs on the right reproduces the signal from two bimorphs under impact excitation,
as described earlier. Using the same labels as in the legend, PZT#2 was preserved intact,
whereas PZT#4 had the connecting rods snapped off. Whereas synchronicity is preserved, as
expected, it is clear that the signal from PZT#4, already lower for some intrinsic difference
between bimorphs or mounting, is significantly reduced by the removal of the connectors. As
the interest is in energy harvesting, it is useful to look at the ratio of energies produced by the
two devices:
2
Renergy=∫V PZT #4
∫ V PZT #2
2
(t )
(t)
15
For the impact events in the figure, such ratio is 0.73 with connectors and 0.33 after their
removal. This means that the PZT#4 has lost about 55% of its energy generation capability.
The two graphs on the left represent the variation of charge flowing through the external
circuit of PZT#4 as a function of time when the torsional bar is alternatively moved between
the extremes of travel defined by the stopper. In both cases, the overall rotation of the
torsional bar covers 30.5 mrad. Statistical analysis of these data yields a total charge
difference of 3.2±0.1 µC with rods and 2.2±0.1 µC once rods were snapped off, implying a
loss of 31% or, alternatively, that the connectors boosted performance by 45%.
Conclusions
A novel compliant smart structure for kinetic piezoelectric energy harvesting has been
presented, geometrically analysed, modelled with FE and prototyped. The structure, featuring
a set of bimorphs, achieves the objectives of providing uniform strain along each bimorph and
synchronicity of deflection within the set. In this way, both suboptimal utilisation of
piezoelectric material and signal cancellation due to out-of-phase generation, common in
previous harvesters, are successfully eliminated.
The FE model proves that the proposed structure delivers uniform strain within the bimorphs
and that the connecting rods are essential to this success (Figure 5).
The prototype demonstrates synchronicity of the generated power signals. The analysis of
photographs yielded a null result, being compatible with both hypotheses considered (arc and
cantilevered beam). However, the removal of the connecting rods has demonstrated that, in
line with FEA, they offered a significant boost in performance, supporting the conclusion that
pure bending was indeed achieved in the prototype (Figure 7).
Data in the last column of Table 1 show that without connecting rods a rotation ~30% larger is
needed to generate the same charges. Already, this means that their presence reduces the input
displacement requirements of the harvester. More importantly, though, the peak strain in the
material is twice larger without connectors, with serious negative impact on service life.
Alternatively, we can conclude from Table 1 that for a set maximum strain, and hence design
life, we can obtain over twice as many charges with connecting rods, and the pure bending
deformation they afford. As energy harvesters move towards applications, their reliability
over time must receive more attention. The structure presented offers the best use of the
material available, within its operating limits.
This smart structure accepts reciprocating rotations of a few degrees as mechanical input.
These may be originally oscillatory rotations or they could be obtained by transforming linear
vibrations into rotational ones. Alternatively, energy can be input into the structure via impact
(as in Figure 7) or via plucking.
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|
1807.04510 | 1 | 1807 | 2018-07-12T10:12:44 | The development of low-temperature atomic layer deposition of HfO2 for TEM sample preparation on soft photo-resist substrate | [
"physics.app-ph"
] | In this study, the method of low-temperature atomic layer deposition (ALD), which is applied on the soft photo-resist (PR) substrate forming hafnium dioxide (HfO2) at 40 C to 85 C, is reported for the first time. This reveals the potential application in the TEM sample preparation. The thickness, refractive index, band gap, and depth profiling chemical state of the thin film are analyzed by ellipsometry, X-ray diffraction, and photoelectron spectroscopy respectively. Our TEM image shows a clear boundary between the photo-resist and hafnium dioxide deposited on PR, which indicates the low-temperature atomic layer deposition (ALD) may lead a new way for TEM sample preparation in advanced technology node. | physics.app-ph | physics | The development of low-temperature atomic layer
deposition of HfO2 for TEM sample preparation on
soft photo-resist substrate
Kang-Ping Peng1, Ya-Chi Liu2, I-Feng Lin3, Chih-Chien Lin4, Shu-Wei Huang5, and Chao-Cheng Ting*
1Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu, Taiwan 30010, ROC
2OptMic Lab, 340 S. Lemon Ave. #8365, Walnut, CA, 91798, USA
3Atom SemiconTek Co., Ltd, B35 1A2, No.1, Lising 1st Rd., East Dist., Hsinchu City 30078, Taiwan
4Center for Micro/Nano Science and Technology, National Cheng Kung University, 701, Tainan, Taiwan
5Department of Electrical, Computer and Energy Engineering, University of Colorado, Boulder, CO, USA
*Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu, Taiwan 30010,
Phone: +86918528040 *Email: [email protected]
ROC
Abstract- In this study, the method of low-temperature
atomic layer deposition (ALD), which is applied on the soft
photo-resist (PR) substrate forming hafnium dioxide (HfO2)
at 40oC to 85oC, is reported for the first time. This reveals
the potential application in the TEM sample preparation.
The thickness, refractive index, band gap, and depth
profiling chemical state of the thin film are analyzed by
ellipsometry, X-ray diffraction,
and photoelectron
spectroscopy respectively. Our TEM image shows a clear
boundary between the photo-resist and hafnium dioxide
deposited on PR, which indicates the low-temperature
atomic layer deposition (ALD) may lead a new way for TEM
sample preparation in advanced technology node.
Keywords – Low-temperature atomic layer deposition,
Hafnium dioxide, Soft photo-resist, TEM sample preparation,
Step coverage.
I. INTRODUCTION
In spite of high-energy sputtering during the Focus Ion Beam
(FIB) process, FIB is commonly used in TEM sample
preparation. To obtain a damage-free specimen, a protection
layer on PR (photo-resist) substrate is required. The main
deposition processes for the layer are RF sputtering Pt and
PECVD oxide [1]. However, a soft PR layer has been developed
in the advanced technology node to reduce the turbulence during
etching process. This results in the current deposition processes
for the protection layer not suitable for this application. With the
use of RF sputtering thin film deposition method, the physical
bombardment of RF sputtered metal particles alters the structure
of the PR pattern. In the interim, the O2 plasma induces radical
based oxidation, which causes severe damage to the PR structure
by PECVD. In addition, the high deposition temperature of CVD
also limits its application in PR protection because the higher
temperature will induce PR reflows. Atomic layer deposition
technique is widely used in electronic industry [2]. However,
few research addresses the challenges when the deposition is on
the patterned soft PR substrate with the temperature is lower than
100oC [3]. In this research, the method of low-temperature
thermal atomic layer deposition (ALD) to form HfO2 at 40oC to
85oC is developed. The preposition is preformed on the soft and
patterned PR substrate with TEM examination the step coverage
of the ALD thin film on the patterned soft PR substrate for the
first time. With the use of ellipsometry, the refractive index and
energy band gap show no significantly difference in the thin film
quality within the deposition temperatures. The detailed physics
of converting the refractive index and energy band gap is
described in the work of Selj, J. H., et al.[4]. The carbon residue
of interface from the condensation of metal organic precursor is
discovered in the XPS depth profile. In addition, a slightly cross
diffusion photo electron signal of carbon 1s and Hf 4f 7/2 is also
noticed. This might be induced by the diffusion of Hf precursor
to the affluent of organic solvent in soft PR. A severe particle
generation is observed when the deposition temperature is below
40oC. The TEM cross section image shows a clear boundary
between patterned PR and the low temperature ALD HfO2 thin
film. This is also shown in EDX mapping image. The unwanted
particle generation may be caused by the incomplete ALD
reaction process. For 40oC-85oC, there is no unwanted particle
generation based on our proposed method, which indicates the
potential application of low-temperature ALD in TEM sample
preparation on the soft photo-resist substrate in advanced
technology node is promising.
II. EXPERIMENT DETAILS
(INTERVVIA 8023)
The experiment is arranged on the PR coated wafer with
thickness of 50nm. The PR
is
commercially obtained from DOW chemical. The PR is only
conducted with a soft bake process in the condition of 100oC for
10 minutes before the atomic layer deposition (ALD). We create
the patterned PR substrate by using focused electron beam
bombardment on the PR with a step structure for further step
coverage examination. A 20nm ALD hafnium dioxide is
deposited via ATOM FA-200 system with metal organic
compound as the precursor, and Ar as the carrier gas. Each ALD
reaction cycle consists of four steps. The PR substrate is exposed
to a Hf precursor pulse of 6s with the Ar carrier gas flow of
30sccm, followed by an Ar purge of 200sccm for 180s. The
difference in the thin film quality at the deposition temperatures
ranging from 40oC to 85oC is studied via ellipsometry, X-ray
diffraction, and photoelectron spectroscopy (XPS, Thermo VG
350) using a Mg Ka X-ray source. The XPS depth profile is
using for the analysis of the boundary of multi-film structures.
The signal of carbon is for binding energy calibration. FIB and
TEM are performed to evaluate the boundary between the soft
patterned photo resist and the ALD HfO2. 150 ALD cycles are
performed at different temperatures. The ALD deposition
parameters are listed in Table I.
III. RESULTS AND DISCUSSION
Fig. 1 shows the stacked thin-film schematic of HfO2 deposited
on photo-resist contains substrate. The thickness of PR(50nm) is
adjusted by the rotation speed. The 10 minutes soft bake is
removing as much unwanted solvent as possible, but still
retaining the similar soft surface as the challenge we are facing in
the advanced technology node. The HfO2 is deposited with 150
ALD cycles at 40oC-85oC. The thickness is ranging from 20.7nm
to 26.2nm at 40oC - 85oC respectively.
Table I. The list of ALD deposition parameters
Deposition
parameters
Substrate
temperature
Setting
40-85 oC
Base pressure
1×10-3 torr
Precursor pulse
Ar 30sccm/6s
Precursor Purge Ar 200sccm/180s
Deposition
pressure
1×10-2 torr
H2O gas flow
50sccm/1s
Final Purge
Ar 200sccm/180s
Fig. 1 The schematic diagram of HfO2 thin film deposited on
photo-resist contains substrate.
Fig. 2 shows the XPS depth profile of the specimen at the
deposition temperature of 85oC. The Hf4f XPS signal reveals
that the Hf atom peak is at the depth of 20nm, then dipping
sharply as tailing to the depth of 30nm. We also discover an
interesting C1s signal at the depth between 20 and 25nm. This
signal was suspected not from the same origin of the C1s signal
at the depth between 30 and 80nm. This signal (20-25nm) is
belonged to the carbon atom from the condensation of the metal
organic precursor due to the overlapping with the Hf signal in the
same depth region.
Fig. 2 The XPS depth profile of the specimen at the deposition
temperature of 85oC
Fig. 3 is the XRR plot of the HfO2 at 50oC. The data shows that
the thickness of HfO2 is decreased as
deposition
temperature increased, which is aligned the result with
ellipsometry.
the
Fig. 3 XRR plot of PEALD 150 cycles at the deposition temperature of
50oC.
Fig. 4 is the plot of thickness, refractive index, and band gap of
HfO2 with 150 ALD cycles at the temperature of 40-85oC. The
value of refractive index is ranging from 1.93 to 1.89 at the
deposition temperature of 40 oC to 85oC, which variation rate is
2% in total. This indicates that quality of the HfO2 thin film does
not alter as the deposition temperature decreases. However, the
variation rate in thickness of the thin film is larger than it in the
value of refractive index, and band gap. The largest thickness is
shown at 40oC, in the lowest deposition temperature of the ALD
condition. This may be a result of CVD reaction mechanism
from the excess precursor residue on the PR surface, and cannot
be removed easily during the purge process at the lower
temperature. The CVD phenomenon is even more obvious when
the deposition temperature is lower than 40oC. In spite of
increasing purge time, a severe particle generation occurs as the
temperature is lower than 40oC. The detail of the ALD thin film
property at temperature of 40-85oC with 150 ALD cycles are
listed in table II.)
Table II. The list of low-temperature ALD thin film property at
temperature of 40-85oC with 150 ALD cycles
ALD temp (oC) Thickness
Band Gap
Fig. 5(a) shows the cross section of HfO2 thin-film with 150
ALD cycles on the planner photo-resist contained substrate. The
composite EDX element mapping of the TEM sample is
presented in fig. 5 (b). It can be easily discovered the interface
between HfO2 and the PR under layer is clear.
Fig. 6(a) shows The TEM cross section image of HfO2 thin
film with 150 ALD cycles at 85oC on patterned photo-resist
substrate. The ALD thin-film are well covered with excellent
step coverage even on the small particle located on the left
bottom in the image. It is worth noticing that the ALD thin-film
still demonstrates excellent step coverage with the landing angle
<90o illustrates in the fig. 6 (b) the high magnitude TEM image.
Fig. 6(c,e) is the Hf, oxygen EDX element mapping of the
specimen indicates a continuous ALD HfO2 thin-film are
developed. We also discover the void occurred in the PR thin
film which is caused by the prolonged electron beam irradiation
during the TEM inspection. The image is presented in Fig. 6(d).
(A)
262
248
220
207
n @
633nm
1.9355
1.934
1.9195
1.8928
(eV)
6.54
6.46
6.33
6.26
40
50
70
85
Fig. 4 (a) thickness, (b) refractive index, and (c) band gap plot of HfO2
with 150 ALD cycles at the temperature of 40 to 85oC.
However, no deformation or distortions are discovered base on
the flat and straight surface above the patterned PR substrate
shows in fig. 6(a). These findings show ALD is a promising
Fig. 5 (a) The TEM cross section image of HfO2 thin film with 150
ALD cycles on photo-resist contained substrate. (b) The composite
EDX element mapping of the TEM sample.
technique for TEM sample preparation on patterned PR
substrate.
IV. CONCLUSION
In this study, a low-temperature, 40oC to 85oC, ALD of HfO2
technique for TEM sample preparation on soft patterned PR
substrate is successfully developed. This has been the first time
so far to demonstrate the feasibility of ALD HfO2 on soft
patterned photo-resist substrate. The TEM image of flat PR
substrate reveals clear boundary between the PR and HfO2. The
excellent step coverage
the patterned
photo-resist substrate even with landing angle < 90o. The ALD
thin-film structure remains intact on the void PR substrate during
the electron beam irradiation. Our findings demonstrate ALD is
crucial for the TEM sample preparation in the development of
advanced technology node.
is discovered on
ACKNOWLEDGMENT
The authors acknowledge the support of the Ministry of Science
and Technology, Taiwan.
REFERENCES
[1]
[2]
Sebastian, E., Tee, I., Shen, Y., Lee, K. W., Tam, L. K., Zhu, J., & Zhao,
S. (2016, July). Advanced coating techniques for photoresist TEM
sample preparation. In Physical and Failure Analysis of Integrated
Circuits (IPFA), 2016 IEEE 23rd International Symposium on the (pp.
112-115). IEEE.A. What et al., IEDM Tech. Dig., pp. 155-158, 20XX.
Biercuk, M. J., Monsma, D. J., Marcus, C. M., Becker, J. S., & Gordon,
R. G. (2003). Low-temperature atomic-layer-deposition lift-off method
for microelectronic and nanoelectronic applications. Applied Physics
Letters, 83(12), 2405-2407.
[3] Hausmann, D. M., & Gordon, R. G. (2003). Surface morphology and
crystallinity control in the atomic layer deposition (ALD) of hafnium and
zirconium oxide thin films. Journal of Crystal Growth, 249(1-2),
251-261.
Selj, J. H., Mongstad, T., Hauback, B. C., & Karazhanov, S. Z. (2012).
The dielectric functions and optical band gaps of thin films of amorphous
and cubic crystalline Mg~ 2NiH~ 4. Thin Solid Films, 520(22),
6786-6792.
[4]
Fig. 6 (a) The TEM cross section image of HfO2 thin-film with 150
ALD cycles on patterned photo-resist substrate at 85oC. (b) The high
magnitude TEM image. (c) The Hf EDX element mapping of the TEM
sample. (d) The carbon EDX element mapping of the tem sample.(e)
The oxygen EDX element mapping of the tem sample.
|
1905.11161 | 2 | 1905 | 2019-10-08T11:14:20 | Piezoelectric Phononic Plates: Retrieving the Frequency Band Structure via All-electric Experiments | [
"physics.app-ph"
] | We propose an experimental technique based on all-electric measurements to retrieve the frequency response of a one-dimensional piezoelectric phononic crystal plate, structured periodically with millimeter-scaled metallic strips on its two surfaces. The metallic electrodes, used for the excitation of Lamb-like guided modes in the plate, ensure at the same time control of their dispersion by means of externally loaded electric circuits that offer non-destructive tunability in the frequency response of these structures. Our results, in very good agreement with finite-element numerical predictions, reveal interesting symmetry aspects that are employed to analyze the frequency band structure of such crystals. More importantly, Lamb-like guided modes interact with electric-resonant bands induced by inductance loads on the plate, whose form and symmetry are discussed and analyzed in depth, showing unprecedented dispersion characteristics. | physics.app-ph | physics | Piezoelectric Phononic Plates: Retrieving the
Frequency Band Structure via All-electric
Experiments.
F H Chikh-Bled, N Kherraz‡, R Sainidou, P Rembert and
B Morvan
Laboratoire Ondes et Milieux Complexes UMR CNRS 6294, UNIHAVRE,
Normandie University, 75 rue Bellot, 76600 Le Havre, France
E-mail: [email protected]
9 October 2019
Abstract. We propose an experimental
technique based on all-electric
measurements to retrieve the frequency response of a one-dimensional piezoelectric
phononic crystal plate, structured periodically with millimeter-scaled metallic
strips on its two surfaces. The metallic electrodes, used for the excitation of
Lamb-like guided modes in the plate, ensure at the same time control of their
dispersion by means of externally loaded electric circuits that offer non-destructive
tunability in the frequency response of these structures. Our results, in very good
agreement with finite-element numerical predictions, reveal interesting symmetry
aspects that are employed to analyze the frequency band structure of such crystals.
More importantly, Lamb-like guided modes interact with electric-resonant bands
induced by inductance loads on the plate, whose form and symmetry are discussed
and analyzed in depth, showing unprecedented dispersion characteristics.
Keywords: piezoelectricity, phononic plate, tunability, Lamb modes, band structure,
circuit loads, electric resonance.
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‡ Present address: Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN,
F-59000 Lille, France
All-electric Experiments for Piezoelectric Phononic Plates
2
1. Introduction
Phononics has shown a significant growth in the last two decades, due to the ability
of periodic structures to exhibit unusual dispersion properties not encountered in
ordinary materials, triggered by the periodicity [1, 2]. Recently, new modern topics
such as heat control [3], topological [4, 5] and non-reciprocal [6 -- 8] wave phenomena,
etc. have imbued this area, while in parallel a noticeable effort has been focused on
the combination of phononics with active materials in order to provide non destructive
control of elastic waves within these structures. Among several possibilities, the use of
piezoelectric materials constitutes an important source of inspiration for the design and
realization of intelligent active devices based on their ability to combine electric circuits
that offer ease in non-destructive, electric command of the dispersion properties of
these structures.
Most of the efforts have been focused on phononic crystal structures containing
piezoelectric materials, especially in the form of thin patch arrays at the surface of,
and/or thin inserts within otherwise homogeneous materials [9 -- 16] in order to ensure
their coupling to external circuits that control electrically the frequency response of
the whole structure. The band structure of these systems becomes tunable, its form
depending on the nature of the electrical shunt connected on the piezoelectric elements.
The targeted application is mainly the vibration mitigation using tailored frequency
band gaps [11, 17 -- 19].
Independently, use of piezoelectric materials in phononic crystals goes back to
the 2000s [20 -- 23]. Motivated by the study of surface acoustic waves, some of these
works involve a piezoceramic plate as the host matrix for two-dimensional holey
arrays.
Interestingly, such configurations integrate on the same piezoelectric plate
the phononic crystal and two interdigital transducers used to generate and receive
the guided waves; they do not offer however the possibility of tuning the frequency
band structure of the crystal. One-dimensional (1D) phononic crystals including
homogeneous piezoelectric plates with corrugated surfaces [24, 25] have been also
considered.
To the best of our knowledge, only a few works propose piezoelectric materials
as host matrices for the design and realization of active phononic devices. This
choice take advantage of the stronger electromechanical coupling that occurs within
the piezoelectric material, usually in the form of plate on the surfaces of which
a 1D array of metallic electrode strips are designed [26 -- 29].
In this case, the
propagation medium is considered elastically homogeneous (no discontinuities are
imposed from a mechanical point of view, since the electrodes are supposed to be
of negligible thickness) and the periodic nature of the structure relates exclusively
to the electric boundary conditions (EBCs) applied to the periodically distributed
electrodes, deposited on the surfaces of the plate. Thus the electric impedance loads
connected on the electrodes can be used via the electromechanical coupling to actively
control the propagation of Lamb-like guided waves within the plate. For instance, an
inductive shunt in association with the inherent capacitive nature of the piezoelectric
material will operate as an equivalent electric resonant circuit that produces avoided
crossings and, under certain conditions, opening up of hybridization gaps. Though
such hybrid modes originating from the admixture of localized electric resonance with
Lamb-like modes are predicted theoretically by the authors in previous papers [27,28]
for various electric-load configurations, up to now no experimental investigation of
their dispersion properties has been realized.
All-electric Experiments for Piezoelectric Phononic Plates
3
(a)
metal strip
(electrode)
piezoceramic
slab (PZ26)
vacuum
(b)
x
2
O
x
1
x
3
O
a
0
s
(c)
...
h
...
x
1
w
u
Z
d
Z
a
0
(a) Schematic representation of the one-dimensional piezoelectric
Figure 1.
crystal, extended to infinity along x1 and x2 directions, which coincide with
the transversely isotropic plane of the piezoceramic material, poled across its
thickness along the x3 symmetry axis. (b) An image of the fabricated sample
with finite dimensions (80 mm × 80 mm × 2.2 mm), used in the experiments, with
the electrodes connected at the edges of the metallic strips (width w = 1.7 mm
and separation gap s = 0.3 mm) aligned along x2 direction. The structure consists
of N = 40 elementary blocks of length a0 = 2 mm. In (c) an elementary block
of the structure loaded with electric circuits of impedance Z u (upper plate side)
and Z d (lower plate side).
In this paper, we present an alternative method based on all-electric
measurements to retrieve the frequency band structure of a one-dimensional
piezoelectric phononic crystal plate coupled with external circuits inducing electric
impedance loads on the structure. Precisely, we make use of both the electric potential
and impedance recorded along the structure to analyze the Lamb-like guided modes
generated in the plate, combined to localized resonance modes induced by external
inductance loads. The symmetry of the frequency bands is also discussed in some
detail in relation to the symmetry of the unit cell.
The paper is structured as follows. First, in section 2 we outline the methods
used in the experiments and describe the structures under study.
In section 3, we
employ three model cases to develop our methodology, discussing in detail physical
aspects and analyzing in terms of symmetry the several modes in the dispersion plots.
Finally, section 4 concludes the paper.
All-electric Experiments for Piezoelectric Phononic Plates
4
(a)
(b)
∞
Z
u→ ∞
(c)
∞
∞
a=a
0
Z
d→ ∞
a=2a
0
Z
c=iLω
a=2a
0
∞
∞
Z
d=iLω
Figure 2. The unit cell of the piezoelectric phononic crystal of lattice constant a,
for the three configurations under study: (a) system I : uniform floating-potential
EBCs for all electrodes (a = a0) applied on both sides (Z u = Z d → ∞), (b)
system II : alternated EBCs (a = 2a0) with floating potential applied to the first
pair of electrodes and an inductance load (Z p = iLω) applied to the second
pair of electrodes, and, (c) system III : alternated EBCs (a = 2a0) with floating
potential applied to the first pair of electrodes and on the upper-side electrode of
the second pair, while the corresponding lower-side electrode is inductance-loaded
(Z d = iLω).
2. Methods
2.1. Piezoelectric phononic crystal plate
We consider a 1D piezoelectric phononic crystal plate of lattice constant a. A
schematic representation of the structure is depicted in figure 1(a). The crystal
consists of an array of parallel metallic strips (electrodes) of width w and separated
by a distance s, placed symmetrically (i.e., face-to-face) on both sides of an otherwise
homogeneous piezoelectric plate of thickness h and are assumed to be of negligible
thickness. The sample used in the experiments is shown in figure 1(b). The square
piezoelectric plate (edge length of 80 mm, thickness h = 2.21 mm) is made of PZ26,
polarized along x3-axis, and a silver thin film, 15 µm-thick, is deposited on the full
area of both surfaces of the plate. Parallel grooves of average width s = 0.3 mm
were machined to create the array of strips whose average width is w = 1.7 mm.
Wires welded on these rectangular electrodes ensure all electric connections used in
the experiments. Each pair of electrodes (up and down side of the plate) can be
connected to electric circuits of characteristic impedance Z u and Z d [see figure 1(c)],
thus implying that the elementary blocks of length a0 = w + s, may have identical
or different EBCs throughout the structure. This offers the possibility of tuning the
periodicity in a non-destructive, active, manner. In the simplest case, when the same
EBCs are applied to every elementary block, the lattice parameter is a = a0; in the
general case, a may be a multiple of a0.
We shall be concerned with three distinct configurations,
schematically
represented in figure 2: (i) the case of identical EBCs, precisely all electrodes having
floating potential, i.e., a = a0 = 2 mm and Z u = Z d → ∞; we shall refer to it as
system I, (ii) alternated EBCs in a unit cell spanning over two elementary blocks, i.e.,
a = 2a0 = 4 mm, the first having floating potential (Z u = Z d → ∞), the second
loaded with an inductance L (of impedance Z p = iLω) connected in parallel with the
piezoelectric plate; we shall refer to it as system II, and, (iii) alternated EBCs in a
All-electric Experiments for Piezoelectric Phononic Plates
5
(a)
pulse
generator
(b)
pulse
generator
(c)
...
...
...
V
u(xn)
Z
d→∞
Z
u =Zosc
1st
electrode
n-th
electrode
Z
u→∞
Z
d =Zosc
...
V
d(xn)
1st
electrode
n-th
electrode
...
Zcheck
16777k
n-th
electrode
Figure 3. Experimental configurations for the recording of the electric potential
in (a) the upper, and (b) the lower side of the plate, along the direction of the
array, at positions xn associated to the n-th pair of electrodes, with a pulse
excitation applied at the first electrode.
In (c), we represent schematically
the experiment setup for the electric impedance measurements at a position xn
associated to the n-th pair of electrodes, via an impedance analyzer, which after
excitation with a sinusoidal voltage collects the electric response at this position.
unit cell spanning over two elementary blocks, i.e., a = 2a0 = 4 mm, the first having
floating potential (Z u = Z d → ∞), the second loaded with an inductance L connected
in series with the lower-side of the piezoelectric plate (Z d = iLω), while the upper-side
has floating-potential conditions; we shall refer to it as system III.
2.2. Experimental Setup
Two main experimental setups are considered, respectively associated to electric
potential, and, electric impedance measurements. In the first case, we expect that,
after excitation of the piezoelectric plate, any deformations will be manifested as
electric potential variations on the electrodes through the electromechanical coupling
All-electric Experiments for Piezoelectric Phononic Plates
6
that takes place within the piezoelectric material. A pulse generator (Panametrics
model 5058PR) allows to excite guided waves propagating in the plate: a 200V-
amplitude and 0.1µs-width pulse is applied to the first pair of electrodes at the one edge
of the piezoelectric plate (let's say, position n = 1), the electromechanical coupling
ensuring a broadband excitation of these waves. The electric potential is recorded
with a 10-bit quantification, at each electrode position, on the upper or lower side of
the plate, with the help of a digital oscilloscope (LeCroy HRO66ZI WaveRunner), the
ground of the pulse generator being taken as reference [see figure 3(a), (b)]; the time
window chosen is typically set to 250 µs, with a sampling period equal to 5 ns, allowing
to observe a few forward and backward traveling waves after reflections at the edges
of the plate. Each measured signal is then averaged 30 times to improve the signal-
to-noise ratio. The above settings ensure a sufficiently high Nyquist frequency and
accurate resolution of the spectra obtained through fast Fourier transforms (FFT).
Electric impedance measurements are also performed using a Zcheck 16777k
impedance analyzer. This device evaluates the complex admittance Y and/or
impedance Z of an electric dipole, after excitation with a sinusoidal voltage applied at
the one pole, the other being connected to the ground; the electric current intensity is
then measured to deduce the admittance Y in a frequency range extending from 10 Hz
to 16 MHz. We employ this technique to record the Yn and Zn spectra of the phononic
crystal piezoelectric plate at different positions xn = (n − 1)a0 along the periodically
structured dimension x1, by connecting the impedance analyzer at the n-th pair of
electrodes, as shown in figure 3(c); the obtained spectra measured in the frequency
range [10 kHz, 1.5 MHz] with a resolution of 50 Hz include the electric response of the
whole structure in the applied voltage excitation, carrying a rich information about
the guided modes of the plate.
3. Results and Discussion
3.1. Model system: uniform floating-potential EBCs
To begin we consider the case of system I consisting of a piezoelectric plate as described
in section 2.1 on which uniform EBCs are applied, precisely all electrodes on both sides
of the plate have identical, floating-potential EBCs. This system is the simplest and
most symmetric configuration and offers a model case to explore and understand the
basic behavior of the piezoelectric phononic crystal, before any inductance loads are
incorporated. We shall use it to present the experimental tools and measurements
that we employ to retrieve the dispersive frequency response of our crystal. Two
main methodological approaches are used: the electric potential measurements and
the electric impedance measurements, both recorded at a pair of electrodes along the
finite crystal's periodicity.
3.1.1. Electric-potential analysis At a first stage, the electric potential is measured
at every strip, on both up and down sides of the phononic plate, separately: the
respective values, V u(xn, t) and V d(xn, t), are collected at the electrode positions
xn = (n− 1)a0, n = 2, . . . , 40. One observes a more or less similar form for the signals
recorded along x1-direction on both sides of the plate, which are mainly characterized
by the presence of two wave fronts: the first propagates with a dominant-wave velocity
estimate of 3625 m s−1, close to the long-wavelength effective medium velocity, ceff ,
of the S0 mode of the corresponding homogeneous piezoceramic plate covered with
All-electric Experiments for Piezoelectric Phononic Plates
7
0
20
40
t ( s)
-6.0
-3.6
-1.2
1.2
3.6
6.0
(a)
(b)
60
)
t
,
0
1
x
(
V
)
t
,
0
3
x
(
V
)
s
(
t
5
0
-5
5
0
-5
0
20
40
60
80
100
1
20
30
10
Electrode number
(c)
40
1
(d)
40
20
30
10
Electrode number
Figure 4. Evolution of the upper-side, V u(xn, t), (solid blue line) and lower-side,
V d(xn, t), (dashed red line) electric-potential signals, recorded at (a) n = 10, and,
(b) n = 30 electrode position. In (c) and (d), we show, respectively, the difference,
V u(xn, t)−V d(xn, t), and, the sum, V u(xn, t)+V d(xn, t), of the electric-potential
signals, recorded along the direction x1 of the piezoelectric phononic crystal plate;
the white dashed lines denote the n = 10 and n = 30 electrodes, while the solid
line in (c) represents the long-wavelength S0 propagating mode with velocity close
to that of the corresponding homogeneous metallized plate.
metallized surfaces on both sides (at x3 = ± h
2 ) [30]; the second one with a much higher
velocity propagation, recognized by the formation of wave fronts, almost parallel to
x2 direction. Comparison of up-side and down-side signals at n = 10 (see figure 4(a))
reveals some intervals for which V u and V d have an opposite phase, precisely for
5 µs . t . 10 µs and for t & 38 µs that coincide, respectively, with the arrivals of
the incident and reflected at the end of the plate S0-like mode. Comparison of these
signals at n = 30 (see figure 4(b)), far away from the excitation point located at n = 1,
clearly shows that for t . 17 µs, for which the S0-like signal is not yet arrived, the
electric potentials V u and V d are in phase. The above suggest that the S0-like mode
is manifested as a symmetric part in the potential, while the fast wave manifests itself
as an antisymmetric part in the potential recorded at each side of the plate. The
All-electric Experiments for Piezoelectric Phononic Plates
8
operation V u ± V d should thus decompose the image of the signals V ν (xn, t) into
two quasi-independent wave components, of the slow (S0-like) and fast modes.
In
figure 4(c) and (d ) we plot the difference and sum of the up- and down-side signals,
that confirm, respectively, the decomposition into a symmetric part dominated by an
easily recognizable S0-like component, and an antisymmetric part dominated by a fast
wave component, whose physical origin will become clear later.
At a second stage, we show that use of the electric-potential signals provides a
detailed picture of the dispersion characteristics of the Lamb-like guided modes of the
finite plate (of length l = N a0, N = 40), as detailed in figure 5; additional information
on their symmetry can be also retrieved through the separated, decomposed signals,
discussed in figure 4(c), (d ). Applying a 2D FFT on the upper-side electric-potential
signal V u(xn, t), we image in figure 5(a) the frequency band structure of the crystal
(a very similar picture is obtained for the lower-side potential V d(xn, t), not shown
here). Comparison of this picture to the frequency band structure of the corresponding
infinite crystal, calculated numerically using a finite-element commercial package [31]
(see figure 5(d )), shows good agreement and confirms that the electric potential
carries sufficient information for the imaging of the frequency band structure in such
piezoelectric phononic systems.
The calculated dispersion plot of our floating-potential crystal (system I ),
obtained after a careful fitting of the elastic, electric, and piezoelectric parameters
(see table 1) to minimize deviation from the experimental results (figure 5(a)) in
the frequency range under consideration presents typical features related to the
homogeneous plate dispersion behaviour, modulated by the periodicity (structured
surfaces and appropriate EBCs). At the long-wavelength limit (ω → 0), in full analogy
with the Lamb modes of the corresponding homogeneous plate, two branches are
observed, the S0-like with linear effective-medium slope (ceff = 3778 m s−1) and the
parabolic A0-like mode. Higher-frequency waveguide modes are also observed with
cut-off (i.e., at k1 = 0) frequencies: 0.47 MHz (A1-like), 0.86 MHz (S1-like), 1.03 MHz
(S2-like), 1.31 MHz (A2-like). The periodic distribution of the metallic strips on both
surfaces of the piezoceramic plate results, as expected, in folding of these curves at
the edges and at the center of the Brillouin Zone (BZ), thus opening up narrow partial
Bragg gaps centered at 0.67 and 1.06 MHz (S0-like), at 0.45 and 1.01 MHz (A0-like), at
0.92 and 1.37 MHz (A1-like), and at 1.43 MHz (A2-like). In addition, weak interactions
of the Lamb-like dispersion curves (i.e., anti-crossing effects when two bands of the
same symmetry meet each other) occur approximately in the middle of the BZ leading
to narrow avoided-crossing (hybridization) gaps. We note in passing that there are no
absolute Bragg gaps occurring in the frequency range below 1.5 MHz for the current
configuration (system I ).
Moreover, the symmetric (V u(xn, t)− V d(xn, t)) and antisymmetric (V u(xn, t) +
V d(xn, t)) parts of the electric potential, shown in figure 4(c), (d ), when processed
lead to two different, complementary pictures of the frequency bands
separately,
corresponding to the guided modes of the periodic finite plate of symmetric and
antisymmetric (with respect to the potential) character represented in figure 5(b) and
(c), respectively. As expected, branches that originate from symmetric Lamb modes
of the homogeneous plate, such as S0-, S1-, and S2-like ones, are manifested in the
symmetric part (figure 5(b)), while branches that originate from antisymmetric Lamb
modes of the homogeneous plate, such as A0-, A1-, and A2-like ones, are manifested in
the antisymmetric part (figure 5(c)). This picture is confirmed, in excellent agreement
with the numerical calculations, if the same operation V u ± V d is applied to the
All-electric Experiments for Piezoelectric Phononic Plates
9
Table 1. Material parameters for PZ26, used in the calculations.
Material Parameter
Symbol Valuea
Elastic coefficients cE
pq [GPa]
Piezoelectric coefficients
ip [C m−2]
eS
Relative permeability
coefficients ǫS
pq
Mass density [kg m−3]
b
cE
11
cE
12
cE
13
cE
33
cE
44
cE
66
eS
15
eS
31
eS
33
ǫS
11
ǫS
33
ρ
148.0 (−11.9%)
110.3 (0%)
85.0 (−14.9%)
135.0 (+10.1%)
28.0 (−7.0%)
18.85 (−34.5%)
9.86 (0%)
−2.80 (0%)
12.50 (−14.9%)
800.0 (−3.4%)
700.0 (0%)
7700 (0%)
a in the parenthesis, we give the relative variation with respect to the
manufacturer's initial values [32].
b cE
11 − cE
12).
66 = 1
2 (cE
potentials corresponding to each point of the dispersion plot, as witnessed by the
color indexing of the dispersion lines, indicating the numerical value of difference
(figure 5(e)) and sum (figure 5(f )) of the potential values calculated at the upper and
lower strip of the unit cell. System I, which is perfectly symmetric with respect to the
x1x2-plane passing at the center of the plate (and in parallel to its surfaces), seems to
support two well-defined, orthogonal subspaces of Lamb-like modes: symmetric and
antisymmetric. Of course, in practise, due to finite-size effects (including off-normal
excitation, i.e., small non-vanishing k2-values) as well as deviations from periodicity
and curvature or aberrations of the surfaces supposed to be planar and parallel in the
ideal case, the corresponding modes will be an admixture of these two different classes
(with a strongly, however, dominating symmetry character).
The above findings suggest that our method appears sensitive to capturing of
the Lamb-like modes, in piezoelectric phononic plates, with the exception of A0-like
modes that seem to be less observable: this branch, as well as its folding at the center
and at the edges of the BZ, is weakly projected (over ten times weaker than the rest
of the modes) in the electric potential representation, in both numerical calculations
and experimental results. The same trend is observed in all cases studied here (see
discussion on systems II and III, below).
Finally, we note the presence of a strong line at k1 = 0 in the experimental
picture (see figure 5(c)) extending over the whole frequency range, that originates from
an instantaneously established electromagnetic excitation of all electrodes through
leakage in air surrounding the structure. Along this line, some distinct points
corresponding either to cut-off frequencies of some visible Lamb-like branches or
to isolated solutions (at f = 0.453 MHz for the A1-like branch and at f =
1.299 MHz for the A2-like branch) are particularly over-amplified, extending, partially
or entirely, along the BZ. Both these contributions are responsible for the fast waves
of antisymmetric character in figure 4(d ).
All-electric Experiments for Piezoelectric Phononic Plates
10
3.1.2. Electric-impedance analysis Following the procedure described in section 2.2
we have also performed electric-impedance measurements on the sample, to complete
the picture obtained from the frequency band structure, discussed previously. The
impedance Zn measured at the position xn = (n−1)a, i.e., at the center of the n-th pair
of electrodes, is, as expected, sensitive to the eigenmodes of the piezoelectric phononic
plate, that manifest themselves as resonance peaks in the Zn spectrum. In the absence
of any external circuit loading, the floating-potential crystal (figure 2(a)) can be
effectively described in the low-frequency region (for frequencies below 0.30 MHz), by
an equivalent planar capacitor Cb whose surfaces are parallel to x1x2-plane. Indeed,
the imaginary part of the admittance Yn = 1
, reveals a clear linear behavior on which
Zn
several resonance structures are superimposed; for the n = 1 (at the one edge of the
plate) and n = 19 (almost in the middle of the plate) pair of electrodes, we thus deduce,
respectively, an equivalent capacitance value Cb = 0.972 nF and Cb = 0.890 nF, while
the average value on all positions gives Cb = 0.905 nF. This description is in analogy
with the concept of the blocked capacitance, used to model effectively the electric
behavior of homogeneous piezoelectric plates [33].
In accordance with the above qualitative picture, we expect Zn to be sensitive to
those electromechanical modes of the crystal that correspond to significant changes in
the thickness of the plate, i.e., they are symmetric with respect to the plate's median
plane (x3 = 0). We find it convenient to represent Yn, rather than Zn, and, more
precisely, its real part, which we map onto the (n, f )-space in figure 6(a) to better
visualize the resonance positions. A closer look at the numerous sharp-resonance
spectra Yn within the frequency region under consideration leads to two important
conclusions: First, for frequencies below 0.47 MHz, where only two bands coexist (the
A0- and the S0-like branches) one observes a series of high amplitude peaks centered
at positions fm that can reproduce the S0-like branch in a discrete manner (see open
symbols in figure 7), as can be easily confirmed by applying "symmetric" boundary
conditions at the edges of the finite plate, along x1-direction, that correspond to the
m
quantization rule k1,m = π
N , where m = 1, 2, . . . , N , N being the number of strips
a
along x1, here considered N = 40.
In figure 6(b) we show the measured real part
of Y1 (solid line) which compares well with the numerical predictions (dotted line)
through finite-element simulations, where losses are taken into account by setting
to 5 · 10−3 the relative imaginary part of all cE
pq coefficients with respect to their
corresponding real part. The amplitude of these peaks is modulated by a standing
wave picture depending strongly on the position xn (an example is given in figure 6(c)
at 0.163 MHz). In addition to these peaks, a plethora of weaker-amplitude, secondary
peaks occur within this frequency range that could be attributed either to the A0-
like eigenmodes, or to out-of-plane modes vibrating along x2 axis, triggered by slight
off-normal effects (such as aperture of the incident beam, possible reflections on the
edges and/or corners of the sample, giving rise to secondary emissions, etc). A second
remark concerns the existence of regions free of modes in the Yn spectra, whatever
the position n of the measurement is, thus implying that these regions are associated
to frequency band gaps of the corresponding infinite phononic crystal. In the case of
floating-potential crystal, we observe a region free of resonance peaks extending from
0.663 to 0.680 MHz that corresponds to the first Bragg gap of the S0-like branch (see
figure 5(a)). We note in passing the presence of modes at certain frequencies which
decay rapidly away from the edges of the plate, a typical example being the set of peaks
lying within the frequency gap region for S0-like modes (see inset in figure 6(b)).
We close this part by pointing out an alternative connection of the impedance
All-electric Experiments for Piezoelectric Phononic Plates
11
analyzer through two consecutive electrodes of the same, upper or lower, side of the
plate. For frequencies below 0.45 MHz the resonance peaks fm, manifested in a Yn-
spectrum, reproduce well the A0-like branch, always following the same quantization
rule for the wavevector k1,m = π
m
N , m = 1, 2, . . . , N , with N = 40. The discrete
a
points obtained in this manner for a measurement between n and n + 1 electrode
positions are shown in figure 7 (filled symbols). Of course, as in the case of the
impedance measurement across plate's thickness, the assignment of several resonant
peaks to selected, distinct bands becomes a complicated task when more than one
bands coexist within a frequency window, even if these bands are not of the same
symmetry (due to finite-size and off-normal effects, as we explained earlier, that favor
some admixture of the modes and excitation of more than one symmetry classes at
the same time).
3.2. Symmetric EBCs including inductances connected in parallel to the plate
Next, we introduce system II as described in section 2.1, which consists of a unit
cell spanning over two elementary blocks (lattice constant a = 4 mm): the EBCs are
not uniform along this unit cell, depicted in figure 2(b). The inductance load (we
take L = 150 µH) is applied to even-numbered electrodes, in parallel to the plate;
the structure conserves, however, the mirror symmetry with respect to the x1x2-plane
(passing at the center of the plate, parallel to its two characteristic surfaces). We apply,
at first, the same methodology used previously for the floating-potential crystal. The
FFT of the electric-potential signals recorded at each electrode position, xn, at the
upper (V u(xn, t)) and lower (V d(xn, t)) side of the plate are practically identical and
lead to a dispersion plot extending over the 1st and 2nd BZ (two measurement points
are now included in each one of the N = 20 unit cells constituting the finite crystal), as
shown in figure 8(a). The difference and sum of the upside and downside potentials,
V u(xn, t) − V d(xn, t) and V u(xn, t) + V d(xn, t), lead respectively to two dispersion
plots [see figure 8(b) and (c)] decomposing the band structure of figure 8(a) into a
symmetric and an antisymmetric part. To facilitate the analysis of these plots we
compute the frequency band structure of the corresponding infinite crystal, shown,
respectively, in figure 8(d ), (e), and (f ). One expects that doubling of the unit-cell
length, as compared to those of system I, will induce folding of the bands of the
= 785.4 m−1. Moreover, the inductance load
floating-potential crystal at k1 = π
2a0
will add new, localized modes originating from LC-like electric resonances which are
generated by the coupling of the inductance L, loaded at each cell, with a virtual
capacitor (or a combination of capacitors) describing effectively the electromagnetic
coupling that takes place within the piezoceramic plate. Indeed, the above picture is
confirmed in figure 8(d ), and the flat band centered at about 0.45 MHz seems to be a
good candidate for localized modes of electric-resonator origin.
Using the same operation as in the right panel of figure 5 (plots (e) and (f )),
we observe that the difference (figure 8(e)) and the sum (figure 8(f )) are non-
vanishing over two separate classes of modes of the phononic crystal piezoelectric
plate, that coincide with the symmetric- and antisymmetric-character labeling of the
frequency bands of the corresponding homogeneous plate. The configuration under
study (system II ) inherits this feature from the initial (homogeneous plate) system
since the horizontal mirror symmetry is not destroyed. Good agreement is obtained
between the experimental results and the numerical predictions, showing that the flat
band is of symmetric character (see figure 8(e)).
In figure 8(b) the S0-, S1-, and
All-electric Experiments for Piezoelectric Phononic Plates
12
S2-like modes are clearly identified. More importantly, two flat modes, at frequencies
0.374 and 0.503 MHz, are observed in the experimental picture, not visible in the
numerical dispersion plot of figure 8(e) (they will be discussed below). Concerning
the antisymmetric subspace, as in the case of system I the A0-like branch is discernible
only after its first folding and close to the center of the 1st BZ, at about 1.00 MHz,
while the A1-like branch is easily identified.
π = 1) to 0.524 MHz ( k1a
We shall further analyze the symmetric part of the dispersion plot for frequencies
below 0.75 MHz.
In figure 9(a) we give a detail of figure 8(d ) and in figure 9(b)
we compute the frequency band structure for the crystal under study, after having
switched off any electromechanical coupling: all eS
ip coefficients are set to zero and one
expects that any electric-resonant band resulting from the electric interaction of the
LC-like resonators will appear in the dispersion diagram in its unhybridized form, i.e.,
without any interaction occurring with the Lamb-like elastic modes of the phononic
plate. After a careful comparison of figure 9(a) with the folded at k1 = 785.4 m−1
corresponding dispersion plot of system I we conclude that the flat band extending
from 0.482 MHz ( k1a
π = 0) is the electric-resonance band; the
rest of the frequency bands correspond to typical Lamb-like modes. In the real system
(see figure 9(b)), these modes lower slightly in frequency, due to the modification in
the electromechanical parameters entering in the eigenvalue problem (see [28]) after
switching off the coupling terms. To confirm the electric origin of this flat mode, an
equivalent electric-line model is developed, to describe and reproduce the coupling
of the isolated electric resonators, arranged in a periodic chain (see Appendix). The
unit cell is described by a coupling capacitor C connecting the upper and lower lines,
each one corresponding to the upper and lower series of structured on the surfaces
of the plate metallic strips, which are described by planar capacitors Cs oriented in
parallel to x1x3-plane; the equivalent-circuit unit cell is depicted in figure A1(a).
After a straightforward application of Kirchhoff's current and voltage laws together
with Bloch's theorem we find a cos-like dispersion line ω(k1) describing this narrow
electric-resonant band, given by
ω = ω0(cid:18)1 +
Cs
C
sin2 k1a
2
2 (cid:19)− 1
,
(1)
where ω0 = 1√LC
is the angular frequency at the center of the BZ (k1 = 0). The
equivalent C and Cs parameters are easily determined through a non-linear point-to-
point fitting of the computed resonant band, shown in red in figure 9(a), with (1). We
obtain C = 0.614 nF and Cs = 0.110 nF, valid along the whole electric band.
In the real system the electromechanical coupling must be taken into account
and the flat electric band will interact with Lamb-like modes of the same symmetry,
leading to hybridization band gaps (HBG) opening up at these crossing regions. In
our case, the electric-resonant band, as a result of the coupling through non-vanishing
eS
ip coefficients, shifts at lower frequencies and interacts with the first S0-like branch
and its folding. Accidentally, the HBG occurs at the vicinity of the S0 first Bragg gap,
thus leading to a significant widening of the gap region that now extends from 0.360 to
0.481 MHz interrupted by the flat band, lying in its interior from 0.426 to 0.458 MHz.
The presence of this partial (for symmetric modes only) wide gap is confirmed in the
experimental dispersion plot (figure 8(b)), which is not the case for the flat electric-
resonant band, centered at 0.503 MHz in the computed dispersion plot of figure 9(b),
hardly seen in the experimental band structure.
It could be possibly shadowed by
other high-amplitude contributions. We remind that L loads are connected to the
All-electric Experiments for Piezoelectric Phononic Plates
13
even-pair electrodes, in our crystal; for this reason, we repeat the FFT of figure 8(b) by
taking into account only the even-numbered electrode positions. The result is shown
in figure 9(c), revealing clearly the presence of the gap (from 0.373 to 0.500 MHz)
together with a part of the flat resonant band lying within this frequency region,
extending from 0.433 to 0.454 MHz. It worths remembering that the flat band is an
admixture of S0-like and electric-resonance modes, the points lying at the first 3
4 along
this line have stronger electric-resonance character. For those points we know (and
this has been confirmed in our numerical simulations) that the deformation along the
thickness direction (x3) of the plate is much higher at the part of the unit cell where
L is loaded (right half) and much weaker at the other part (left half) of the unit cell
where floating-potential EBCs are applied (see figure 2(b)).
We corroborate this picture with the help of the electric impedance measured
at the first electrode position. Precisely, the real part of the admittance shown
in figure 9(d ) reveals a number of sharp, narrow peaks for frequencies below 0.346 MHz,
whose assignment to discrete wavenumber values following the rule k1,m = π
m
N ,
a
m = 1, 2, . . . , N , where N = 20, reproduces well the S0-like branch (see symbols
in figure 9(b)). A region free of resonance peaks extending from 0.392 to 0.484 MHz
corresponds to the gap, predicted by the numerical simulations, which is delimited by
two strong peaks in the Y spectrum at 0.374 and 0.503 MHz. The inverse electric-
potential FFT of each one of these two selected flat bands shows that they correspond
to modes of wavelength λ ≈ 4a0, localized in the first few unit cells of the crystal, close
to the excitation point. The spectra of admittance Yn measured along x1 direction
at positions xn do not allow an identification of the flat electric band, perturbed by
several contributions related to interference phenomena, sensitive to the presence of
the inductance L. The impedance seems to provide a more clear picture, in accordance
with the results found from the electric-potential analysis. In figure 10 we plot the
evolution of the real part of the impedance, recorded along x1 direction, as a function
of frequency, within the gap region of figure 9(b). One observes the presence of several
high-amplitude resonance structures, each containing more than one resonance peaks
that cannot be separately resolved. They form a resonant band extending from 0.418
to 0.455 MHz, which corresponds well to the frequency region found in figure 9(c).
3.3. Non-symmetric EBCs including connected inductances in series to the plate
As a last case, we examine system III described in section 2.1, which, again, consists
of a unit cell spanning over two elementary blocks (lattice constant a = 4 mm), with
the difference that now the EBCs, depicted in figure 2(c), are not symmetric with
respect to the median horizontal plane of the plate: floating-potential conditions are
applied to the left part (odd-numbered electrodes) of the unit cell (as in system II );
the right part (even-numbered electrodes) is loaded with an inductance L = 150 µH
connected in series with the plate at the lower-side electrode, while floating-potential
conditions are applied at the upper-side electrode.
We repeat the same steps in our analysis, concerning the dispersion plot of
this system. Again, we retrieve the experimental frequency band structure after a
double FFT is applied to the electric-potential signals recorded at each electrode
position of the upper (V u(xn, t)) or the lower (V d(xn, t)) side of the plate:
the
corresponding pictures, shown respectively in figure 11(a) and (b), differ, as one could
expect, lack of mirror symmetry with respect to x1x2-plane. The main differences
lie within the frequency range below 0.45 MHz and concern the weakening of the S0-
All-electric Experiments for Piezoelectric Phononic Plates
14
like branch for the case of lower-side measurements, below the first HBG extending
from 0.312 to 0.343 MHz, while the band just above this gap extending from 0.343
to 0.442 MHz and an almost flat part of a dispersion line at f ≃ 0.300 MHz seem to
be enhanced. The above observations suggest that these modes are strongly related
to the presence of the inductance load and should contain an important percentage
of electric-resonance hybridization. In figure 11(c) and (d ) we show, as usually, the
dispersion plot obtained from the FFT of the difference, V u(xn, t)− V d(xn, t), and the
sum, V u(xn, t) + V d(xn, t), of the separately recorded signals at the two sides of the
plate. The corresponding computed frequency band structures, with elastic, electric
and piezoelectric constants taken again from table 1, are shown in figure 11(e), (f ) and
(g), using the same representation: we map along these curves the computed difference
and sum of the electric-potential values, on the upper- and lower-side electrodes of each
unit cell; the results are in good agreement with the experimental picture.
The most striking difference, as compared to the two previously studied systems
is the absence of crossing between any two dispersion lines: every time two curves
cross each other an avoided crossing takes place and an interaction occurs (whatever
the degree of this interaction: strong or weak). This implies that all bands must
belong to the same symmetry class,
i.e., their classification into symmetric and
antisymmetric modes is not valid any more, since system III lowers its symmetry
because of the one-side inductance load. This is also confirmed by the picture given
in figure 11(f ) and (g). Each eigenmode contains both "symmetric"(V u − V d) and
"antisymmetric"(V u+V d) parts of the potentials and is -- in a bigger or lesser degree --
observed in both representations. As an example, the S0-like branch is not anymore
purely symmetric, but an admixture of symmetric and antisymmetric contributions.
That is why, strictly speaking, labeling of the several dispersion lines with terms used
for the modes in homogeneous plates is not appropriate, in this case, and should be
avoided. Finally, the results presented in figure 11 reveal the existence of an unusual
curve with an almost vertical part at k1 ≃ 0.125 mm−1 for frequencies higher than
0.55 MHz. This branch carries a strong antisymmetric hybridized character and could
be of electric-resonant origin, induced by the presence of the L-loads that couple with
the piezoelectric plate which is effectively described by an equivalent system of planar
capacitors.
To clarify this point, we calculate the frequency band structure of system III
when the electromechanical coupling is switched off (by setting eS
ip = 0). The results,
shown in figure 12(a) reveal, indeed, a very wide, hyperbola-like band with zero group
velocity at 0.374 MHz (at the edge of the 1st BZ), that originates from the coupling of
the individual LC-like resonators; the remaining elastic branches coincide to those of
system II, depicted in figure 9(a). An attempt to describe this electric band may be
realized through an equivalent transmission-line periodic model whose unit cell is given
in figure A1(b) (see Appendix). After a straightforward application of Kirchhoff's
current and voltage laws together with Bloch's theorem we find a hyperbola-like
dispersion line ω(k1) describing this very wide electric-resonant band, given by
Cd
s
C
sin2 k1a
2
ω = ω0(cid:20)1 + 2
− (cid:18)1 + 2
where again ω0 = 1√LC
Cu
s
C
sin2 k1a
2
2 (cid:19)−1#− 1
,
(2)
, while for wavevector values close to the center of the
All-electric Experiments for Piezoelectric Phononic Plates
15
BZ the angular frequency is approximately given by ω(cid:0) k1a
. The equivalent C, Cu
k1a , with
s parameters are easily determined
π ≪ 1(cid:1) ≈ ω1
s and Cd
ω1 =
1
(Cu
s +Cd
s )
2
qL
through a non-linear point-to-point fitting of the computed resonant band, shown
in red in figure 12(a), with (2). We obtain C = 1.658 nF, Cu
s = 0.983 nF and
Cd
s = 0.149 nF, valid along the whole electric band.
Next, we switch on the electromechanical coupling (see figure 12(b), which
corresponds to a detail of figure 11(e)). The very wide electric-resonance band couples
with the Lamb-like modes of the phononic plate and interacts strongly with the A1-
and in a lesser degree with the S0-like mode of the plate, thus leading to large avoided
crossings that extend, respectively, from 0.308 to 0.350 MHz, and from 0.432 to
0.546 MHz. Finally, the appearance of very narrow, absolute HBGs is also observed
(see blue-shaded regions in figure 12(b)), centered at 0.275 and 0.558 MHz, as a result
of the weak interaction between the S0 and A0-like modes, the former, and between
the unhybridized electric-resonance band (red dotted lines) and some guided modes
of the plate, the latter.
It is worth noting that, though L-circuit loads have been already used in the
past [27], the configuration under study provides unprecedented characteristics in the
dispersion relation plots, related to the very wide electric resonant band, whose low-
symmetry character (a hybridization of dominating antisymmetric with symmetric
modes) leads to a strong interaction with the A1-like mode and in a lesser degree with
S0; the inverse was observed for system II.
4. Conclusion
in terms of symmetry,
In summary, we developed an experimental methodology based on all-electric
measurements to retrieve and analyze,
the frequency
band structure of a piezoelectric phononic plate structured on the surfaces with
periodically distributed arrays of metallic strips, used for both excitation and
reception of the response of the plate. This method, examined in three model cases
including symmetric and non-symmetric applied EBCs with several inductance-load
configurations, has been shown to be robust, efficient, and, reliable in providing a rich
information on the symmetry of the electromechanical modes and, at the same time,
promising in terms of invariant performances under rescaling, especially for structure
miniaturization. More importantly, our results, in good agreement with numerical
predictions, demonstrate the possibility of inducing new, unusual electric modes that
can interact at will with the guided Lamb-like modes generated in the plate, through
a variety of combinations that the external electric circuits may offer. Lowering in a
non-destructive manner the symmetry of the structure, by means of external loads,
controls the symmetry of the dispersion curves, thus leading to possible openings of
avoided-crossing gaps, whose width and degree of interaction should be studied in the
future.
Acknowledgments
F.-H.C.-B. was supported by the Normandy Region RIN program METACAP through
a postgraduate fellowship.
All-electric Experiments for Piezoelectric Phononic Plates
16
Appendix: Equivalent electric circuits
The equivalent circuit that models the electric resonator of system II when the
piezoelectric coupling is switched off is depicted in figure A1(a). We define all voltages
in the input, VAj , and output, VBj = PVAj , of the unit cell, as well as those at the
edges of the inductance load, VMj , with respect to a common ground reference, where
j = 1, 2, and P = e−ik1a is the Bloch phase factor (we assume an e+iωt time dependance
in all fields); the incoming and outgoing electric currents are respectively Ij and PIj.
Application of Kirchhoff's current and voltage laws gives
VAj − VMj
Ij
=
VMj − VAjP
IjP
= Zs,
j = 1, 2,
=
=
ZC ZL
VM2 − VM1
I2(1 − P)
VM1 − VM2
I1(1 − P)
where we defined Zs = 1
that I1 = −I2, VA1 = −VA2 , VM1 = −VM2 , and VMj = VAj
the above system to a 2 × 2 form which, after elimination of the ratio VA1
, leads to
a secular equation depending only on P and the set of unit-cell impedances. We thus
obtain the following dispersion equation for the electric resonant band
iCω , and ZL = iLω. From (A.1) one can easily see
, that finally reduce
iCsω , ZC = 1
ZC + ZL
2P1+P
(A.1)
I1
,
ω = ω0(cid:18)1 +
Cs
C
sin2 k1a
2
,
2 (cid:19)− 1
1√L(C+Cs)
where ω0 = 1√LC
edge of the BZ (k1 = π
cos-like resonant band is finite.
is the angular frequency at the center of the BZ (k1 = 0); at the
. The width ∆ω = ω0 − ωπ of this
a ) we find ωπ =
To model the unit cell of the asymmetric with respect to x1x2-plane crystal,
we will assume the capacitors Cs to be different for the upper and lower side (see
figure A1(b)). We follow the same considerations for the quantities concerning the left
and right ports, by applying the Bloch phase factor, and application of Kirchhoff's
current and voltage laws gives
VAj − VMj
Ij
VM1 − VM2
I1(1 − P)
VM2
(I1 + I2)(1 − P)
s = 1
iC ν
=
VMj − VAjP
IjP
= Z ν
s ,
= ZC ,
= ZL.
(A.2)
s ω with ν = u(d) for j = 1(2), while ZC = 1
Here we defined Z ν
iCω and ZL = iLω,
as in the previous case. From (A.2) one can easily see that Ij = VAj
, and
VMj = VAj
, that finally reduce the above system to a 2 × 2 form which, after
elimination of the unknowns VAj , leads to a secular equation depending only on P
and the set of unit-cell impedances. We thus obtain the following dispersion equation
for the electric resonant band
1−P1+P
2P1+P
1
Zν
s
ω = ω0(cid:20)1 + 2
− (cid:18)1 + 2
Cu
s
C
Cd
s
C
sin2 k1a
2
sin2 k1a
2
2 (cid:19)−1#− 1
,
All-electric Experiments for Piezoelectric Phononic Plates
17
where again ω0 = 1√LC
. For wavevector values close to the center of the BZ the angular
1
(Cu
s +Cd
s )
diverging according to an hyperbola-like behaviour; at the edge of the BZ (k1 = π
a )
π ≪ 1(cid:1) ≈ ω1
k1a , with ω1 =
qL
,
2
frequency is approximately given by ω(cid:0) k1a
C (cid:17)−1(cid:21)− 1
we find ωπ = ω0(cid:20)1 + 2 C d
C −(cid:16)1 + 2 C u
wide hyperbola-like resonant band is infinite.
2
s
s
. The width ∆ω = ω1
k1a − ωπ of this very
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2013 Analysis of signals propagating in a phononic crystal PZT layer deposited on a silicon
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[30] For the S0 branch we calculate ceff = 3503 m s−1, using the parameters of table 1.
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of linear piezoelectric structures Smart Mater. Struct. 16 323 -- 31.
All-electric Experiments for Piezoelectric Phononic Plates
19
0
a
1.0
)
z
H
M
(
f
0.5
0.0
1.0
0.5
0.0
)
z
H
M
(
f
)
z
H
M
(
f
1.0
0.5
0.0
-1
0
max
a
a
a
S2
S1
A2
A1
(a)
S0
(d)
A0
(b)
(e)
(c)
1
-1
0
(f)
1
Wavenumber k1 (mm-1)
Figure 5. Left panel: Experimental frequency band structure of the piezoelectric
floating-potential phononic crystal plate (system I ), consisting of N = 40 unit
cells of lattice constant a = a0 = 2 mm, obtained from a double FFT of
the electric-potential signal (a) recorded at the upper-side electrode, V u(xn, t),
and extracted from (b) the difference V u(xn, t) − V d(xn, t), and, (c) the sum,
V u(xn, t) + V d(xn, t), of the electric-potential signals measured on both sides
of the plate (all color maps are saturated). Right panel: The corresponding
calculated band structures obtained through finite-element numerical simulations.
The labels in (d) correspond to usual notations adopted for Lamb modes in
homogeneous plates with blue thick and gray thin lines representing, respectively,
the family of symmetric and antisymmetric modes, shown separately in the
negative and positive part of the 1st BZ, for a better visibility. The yellow-shaded
regions indicate frequency gaps for symmetric modes in the frequency range under
consideration. In (e) and (f ) the Lamb-like modes of plot (d) are colored with
the difference and the sum of the calculated average potentials on the upper-side
and lower-side electrodes of the unit cell.
All-electric Experiments for Piezoelectric Phononic Plates
20
0.8
0.6
0.4
0.2
0.0
1.0
0.5
0.0
)
z
H
M
(
f
)
S
m
(
}
Y
{
e
R
0.0
0.6
1.2
1.8
2.4
3.0 mS
Re{Y} (mS)
10
5
0
0.69
0.66
0.63
(a)
(b)
1
10
20
30
Electrode number
(c)
40
Figure 6. (a) Variation of the real part of the admittance measured at each
pair of electrodes for the floating-potential finite crystal consisting of N = 40
unit cells, with the position along x1-direction and frequency. Two cuts of this
representation (b) across the n = 1 pair of electrodes, and, (c) at a given frequency
f = 0.163 MHz are also shown; blue solid and red dotted lines denote, respectively,
measured and calculated values and the yellow-shaded region indicates the Bragg
gap of the S0-like mode.
0.6
0.4
0.2
)
z
H
M
(
f
0.0
0.0
S0
A0
0.5
Wavenumber k1 (mm-1)
1.0
1.5
Figure 7. A detail of figure 5(d) showing the calculated S0-like (blue line)
and A0-like (gray line) branches together with the experimental discrete points,
retrieved, respectively, from impedance measurements along the plate thickness
(open symbols) and between two adjacent electrodes (filled symbols).
All-electric Experiments for Piezoelectric Phononic Plates
21
0
a
2
a
(a)
)
z
H
M
(
f
)
z
H
M
(
f
)
z
H
M
(
f
1.0
0.5
0.0
1.0
0.5
0.0
1.0
0.5
0.0
(b)
(c)
-1
0
max
a
2
a
a
2
a
2
a
(d)
A2
a
S2
S1
A1
S0
A0
(e)
(f)
1
Wavenumber k1 (mm-1)
-1
0
1
Figure 8. Left panel: Experimental frequency band structure of a piezoelectric
phononic crystal with EBCs depicted in figure 2(b) (system II ), consisting of
N = 20 unit cells of lattice constant a = 2a0 = 4 mm, obtained from a double
FFT of the electric-potential signal (a) recorded at the upper-side electrode,
V u(xn, t), and extracted from (b) the difference V u(xn, t) − V d(xn, t), and, (c)
the sum, V u(xn, t) + V d(xn, t), of the electric-potential signals measured on both
sides of the plate (all color maps are saturated). Right panel: The corresponding
calculated band structures obtained through finite-element numerical simulations.
The labels in (d) correspond to usual notations adopted for Lamb modes in
homogeneous plates with blue thick and gray thin lines representing, respectively,
the family of symmetric and antisymmetric modes, shown separately in the
negative and positive part of the 1st and the 2nd BZ, for a better visibility.
The yellow-shaded regions indicate frequency gaps for symmetric modes in the
frequency range under consideration. In (e) and (f ) the Lamb-like modes of plot
(d) are colored with the difference and the sum of the calculated average potentials
on the upper-side and lower-side electrodes of the unit cell.
All-electric Experiments for Piezoelectric Phononic Plates
22
)
z
H
M
(
f
0.75
0.50
0.25
S0
(a)
0.5
10
0.00
0.0
(b)
10
0.5
k1a/
(c)
(d)
10
2
8 12
Re{Y} (mS)
0.5
Figure 9. Calculated band structure of the crystal shown in figure 2(b) (system
II ) with (a) no electromechanical coupling and (b) full electromechanical coupling
taken into account. Color lines follow the same nomenclature as in figure 8
and the red line shows the numerically fitted electric band of the corresponding
transmission-line model given by (1). The experimental frequency band structure
obtained from a 2D FFT of the difference of the up- and down-side potential
signals measured at the even-pair electrodes only is shown in (c). The real part
of the admittance Y , shown in (d), is measured at n = 1, whose peak positions
reproduce the S0-like band in (b) (open symbols). The yellow-shaded region
denotes the calculated band gap region of plot (b).
ReZ in k
0.55
0.0
7.7
15
23
)
z
H
M
(
f
0.50
0.45
0.40
0.35
0.30
1
5
10
20
15
25
Electrode number
30
35
40
Figure 10. Evolution of the real part of the electric impedance with electrode
position, measured along x1 direction of system II, within the gap region shown
in figure 9.
All-electric Experiments for Piezoelectric Phononic Plates
23
0
2
a
a
a
2
a
(a)
(b)
max
S2
S1
A1
S0
A0
(e)
(c)
(f)
(d)
-1
1
0
0
Wavenumber k1 (mm-1)
(g)
1
)
z
H
M
(
f
)
z
H
M
(
f
)
z
H
M
(
f
1.0
0.5
0.0
1.0
0.5
0.0
1.0
0.5
0.0
Figure 11. Left panel: Experimental frequency band structure of a piezoelectric
phononic crystal with EBCs depicted in figure 2(c) (system III ), consisting of
N = 20 unit cells of lattice constant a = 2a0 = 4 mm, obtained from a double
FFT of the electric-potential signal recorded at the (a) upper-side and (b) lower-
side electrode, V u(xn, t) and V d(xn, t), respectively, and extracted from (c) the
difference V u(xn, t) − V d(xn, t), and, (d) the sum, V u(xn, t) + V d(xn, t), of the
electric-potential signals measured on both sides of the plate (all color maps are
saturated). Right panel: The corresponding calculated band structures obtained
through finite-element numerical simulations. The labels in (e) correspond to
usual notations adopted for Lamb modes in homogeneous plates. The yellow-
shaded regions denote avoided crossings that originate from the interaction of the
electric resonant modes with the S0-like and A1-like guided modes of the plate.
In (f ) and (g) the Lamb-like modes of plot (e) are colored with the difference
and the sum of the calculated average potentials on the upper-side and lower-side
electrodes of the unit cell.
All-electric Experiments for Piezoelectric Phononic Plates
24
)
z
H
M
(
f
0.75
0.50
A1
0.25
S0
A0
(a)
0.5
1 0
0.00
0.0
(b)
1 0
0.5
k1a/
(c)
1
0.5
Figure 12. Calculated band structure of the crystal shown in figure 2(c)
(system III ) with (a) no electromechanical coupling and (b) full electromechanical
coupling taken into account. Color lines follow the same nomenclature as in
figure 11 and the red line shows the numerically fitted electric band of the
corresponding transmission-line model given by (2).
In (c) the experimental
frequency band structure obtained from a 2D FFT of the sum of the up- and
down-side potential signals measured at the odd-pair electrodes only is given
for comparison. The resonant peaks of the real part of the admittance Y1 are
used to reproduce the S0-like band in (b) (open symbols). The yellow-shaded and
blue-shaded regions denote, respectively, avoided crossings (see text) and absolute
frequency band gaps.
All-electric Experiments for Piezoelectric Phononic Plates
25
(a)
(b)
A1
A2
C
s
I1
C
s
I2
A1
A2
C
u
s
I1
C
d
s
I2
C
s
C
s
B1
I1P
B2
I2P
C
u
s
C
d
s
B1
I1P
B2
I2P
M1
L
C
M2
a
M1
C
M2
L
a
Figure A1. The unit cell of a periodic transmission line describing equivalently
(a) system II
(figure 2(c)) when all
electromechanical couplings are switched off.
(figure 2(b)) and (b) system III
|
1905.12486 | 2 | 1905 | 2019-06-06T18:34:49 | Kinetically Stable Single Crystals of Perovskite-Phase CsPbI${_3}$ | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | We use solid-state methods to synthesize single crystals of perovskite-phase cesium lead iodide (${\gamma}$-CsPbI3) that are kinetically stable at room temperature. Single crystal X-ray diffraction characterization shows that the compound is orthorhombic with the GdFeO3 structure at room temperature. Unlike conventional semiconductors, the optical absorption and the joint density-of-states of bulk ${\gamma}$-CsPbI3 is greatest near the band edge and decreases beyond Eg for at least 1.9 eV. Bulk ${\gamma}$-CsPbI3 does not show an excitonic resonance and has an optical band gap of 1.63(3) eV, ~90 meV smaller than has been reported in thin films; these and other differences indicate that previously-measured thin film ${\gamma}$-CsPbI3 shows signatures of quantum confinement. By flowing gases over ${\gamma}$-CsPbI3 during in situ powder X-ray diffraction measurements, we confirm that ${\gamma}$-CsPbI3 is stable to oxygen but rapidly and catalytically converts to non-perovskite ${\delta}$-CsPbI3 in the presence of moisture. Our results on bulk ${\gamma}$-CsPbI3 provide vital parameters for theoretical and experimental investigations into perovskite-phase CsPbI3 that will the guide the design and synthesis of atmospherically stable inorganic halide perovskites. | physics.app-ph | physics | Kinetically Stable Single Crystals of Perovskite-Phase CsPbI3
Daniel B. Straus, Shu Guo, and Robert J. Cava*
Department of Chemistry, Princeton University, Princeton, NJ 08544 USA
*Author to whom correspondence should be addressed. Email: [email protected]
Abstract
We use solid-state methods to synthesize single crystals of perovskite-phase cesium lead
iodide (γ-CsPbI3) that are kinetically stable at room temperature. Single crystal X-ray diffraction
characterization shows that the compound is orthorhombic with the GdFeO3 structure at room
temperature. Unlike conventional semiconductors, the optical absorption and the joint density-of-
states of bulk γ-CsPbI3 is greatest near the band edge and decreases beyond Eg for at least 1.9 eV.
Bulk γ-CsPbI3 does not show an excitonic resonance and has an optical band gap of 1.63(3) eV,
~90 meV smaller than has been reported in thin films; these and other differences indicate that
previously-measured thin film γ-CsPbI3 shows signatures of quantum confinement. By flowing
gases over γ-CsPbI3 during in situ powder X-ray diffraction measurements, we confirm that γ-
CsPbI3 is stable to oxygen but rapidly and catalytically converts to non-perovskite δ-CsPbI3 in the
presence of moisture. Our results on bulk γ-CsPbI3 provide vital parameters for theoretical and
experimental investigations into perovskite-phase CsPbI3 that will the guide the design and
synthesis of atmospherically stable inorganic halide perovskites.
1
Halide perovskites have attracted tremendous interest due to their promise as a solution-
processable active layer in solar cells with efficiencies rivaling commercial silicon solar cells.1,2
Halide perovskites have the formula AMX3, where A is a small organic (e.g. CH3NH3
+) or Cs+
cation, M is typically Pb2+ or Sn2+, and X is a halide. The highest efficiency halide perovskite solar
cells incorporate methylammonium lead iodide (CH3NH3PbI3), which tends to decompose under
normal operating conditions.3
One approach to stabilizing halide perovskite solar cells is to replace the organic cation
with an inorganic Cs+ cation.4 While cesium lead iodide (CsPbI3) has a much higher decomposition
temperature than CH3NH3PbI3,5 introducing Cs+ is problematic because the size of the Cs+ cation
is near the lower limit for forming a lead iodide perovskite.6,7 Accordingly, CsPbI3 is only
thermodynamically stable as a perovskite above ~325 °C,8 where it is cubic (α-CsPbI3).5 At
ambient conditions it rapidly converts to a yellow material consisting of one-dimensional chains
of Pb-I octahedra (δ-CsPbI3).9,10 Moisture is reported to accelerate conversion from perovskite-
phase CsPbI3 to δ-CsPbI3,8,11 and perovskite-phase CsPbI3 is unstable in atmosphere and
unsuitable for solar cells without additional stabilization. Small grain sizes stabilize perovskite-
phase CsPbI3,
4,12,13 and atmospherically-stable perovskite-phase CsPbI3 has been synthesized as
quantum dots13 and thin films with grain sizes of ~100nm,12 allowing for the creation of CsPbI3-
based solar cells that function in atmosphere.13 -- 15
To the best of our knowledge, all studies to-date of perovskite-phase CsPbI3 have been on
thin-films, powders, or nanocrystals.16 -- 18 It is widely held that the large 6.9% volume change from
δ-CsPbI3 to cubic perovskite-phase α-CsPbI3 would cause single crystals to fracture, rendering the
synthesis of single crystals of perovskite-phase CsPbI3 impossible.5
2
Here we directly synthesize and characterize macroscopic single crystals of perovskite-
phase CsPbI3 that are kinetically stable at room temperature in the absence of moisture. Using
single-crystal X-ray diffraction (SCXRD) measurements, we confirm recent powder X-ray
diffraction (PXRD) refinements16,17 that show perovskite-phase CsPbI3 is orthorhombic at room
temperature (γ-CsPbI3) adopting the GdFeO3 structure. We find a smaller band gap Eg of 1.63(3)
eV for perovskite-phase γ-CsPbI3 than previously reported and show that its strongest absorption
between Eg and 3.5 eV is near the band edge, indicating that previous reports of the optical
character of γ-CsPbI3 are for quantum-confined material. By monitoring the optical absorption
during the conversion from γ-CsPbI3 to δ-CsPbI3, we demonstrate that quantum-confined γ-CsPbI3
shows enhanced stability, supporting theoretical and experimental findings that small grain sizes
stabilize γ-CsPbI3.4,12,13 Lastly, by flowing gases over the sample in situ during PXRD
experiments, we demonstrate that while perovskite-phase γ-CsPbI3 is stable in dry argon and dry
oxygen atmospheres, it rapidly and completely converts to δ-CsPbI3 upon exposure to humid
argon. Our structural and optical data provide fundamental parameters necessary for theoretical
studies on CsPbI3 that will inform the design and synthesis of stable all-inorganic halide
perovskites.
We synthesize CsPbI3 single crystals via a solid-state method. CsPbI3 melts congruently at
~480 °C,19 and we melt a stoichiometric mixture of dry CsI and PbI2 sealed in an evacuated
ampoule. The black perovskite phase is synthesized by slowly cooling the melt from 550 °C to
370 °C followed by rapid quenching in an ice water bath. Figure 1A shows bulk perovskite-phase
γ-CsPbI3 in an evacuated ampoule 39 days after synthesis. Perovskite-phase CsPbI3 is known to
be unstable in air,4,8,11 so extreme care is taken to minimize air exposure.
3
At room temperature, perovskite-phase γ-CsPbI3 is orthorhombic16,17 in the Pnma space
group with the GdFeO3 structure type, which following convention we refer to as γ-CsPbI3.
Structural distortion in perovskites is categorized by Glazer,20 and γ-CsPbI3 follows tilt system #10
with three octahedral tilt angles, two of which are identical. We find tilt angles of 14.00(2)° and
10.08(3)°. The PbI4
2- octahedra are distorted with I-Pb-I bond angles of 89.29(3)°, 88.44(3)° and
89.117(9)° and show more distortion than CH3NH3PbI3 which is tetragonal at room temperature
with I-Pb-I bond angles of 88.94(13), 89.980(5) and tilt angles of 1.1(2) and 8.23(3).9 The
distortion in γ-CsPbI3 may cause its thermodynamic instability.
Our 295 K SCXRD structure for perovskite-phase γ-CsPbI3 is depicted in Figure 1B and
described in Tables 1, S1, and S2. While our structure is similar to two recent structures found by
Rietveld refinements of PXRD patterns,16,17 characterization via SCXRD avoids complications
due to overlapping reflections, preferred orientation, and background subtraction of the air-free
holder that are inherent to PXRD pattern refinements.16,17 Our single crystal refinement provides
reliable structural parameters necessary for accurate theoretical calculations.
Figure 1: (A) Photograph of γ-CsPbI3. (B) SCXRD structure of γ-CsPbI3. (C) Photograph of δ-
CsPbI3. (D) SCXRD structure of δ-CsPbI3. (B) and (D) visualized using VESTA21 with Cs in
green, Pb in grey, and I in purple, all depicted as 50% thermal ellipsoids.
4
Table 1: Crystallographic structural parameters
Empirical formula
Formula weight
Temperature/K
Crystal system
Space group
a/Å
b/Å
c/Å
Volume/Å3
Z
ρcalcg/cm3
μ/mm-1
γ-CsPbI3
CsI3Pb
720.80
295
orthorhombic
Pnma
8.8637(8)
12.4838(12)
8.5783(8)
949.21(15)
4
5.044
31.213
Crystal size/mm3
Crystal color
0.053 × 0.047 × 0.029
black
Goodness-of-fit on F2
Final R indexes [I>=2σ (I)] R1 = 0.0349, wR2 = 0.0599
Final R indexes [all data]
R1 = 0.0645, wR2 = 0.0679
1.047
δ-CsPbI3
CsI3Pb
720.80
295
orthorhombic
Pnma
10.4500(5)
4.7965(2)
17.7602(8)
890.20(7)
4
5.378
33.282
0.038 × 0.036 × 0.017
yellow
1.107
R1 = 0.0202, wR2 = 0.0313
R1 = 0.0290, wR2 = 0.0330
If CsPbI3 is slowly cooled to room temperature from 550 °C, yellow δ-CsPbI3 forms
(Figure 1C), confirming δ-CsPbI3 is the thermodynamic product and γ-CsPbI3 is the kinetic
product. The 6.9% volume change from to the cubic perovskite phase α-CsPbI3 to δ-CsPbI3 has
been hypothesized to cause single crystals to fracture,5 but we find single crystals of yellow δ-
CsPbI3 in the slow-cooled material. Our 295 K SCXRD structure is shown in Figure 1D and
described in Tables 1, S1, and S2. Like γ-CsPbI3, δ-CsPbI3 is also orthorhombic and in the Pnma
space group but with a non-perovskite NH4CdCl3 structure type.10 Despite the platy crystal habit
of our crystals, our crystal structure does not significantly differ from a reported SCXRD structure
on needle habit δ-CsPbI3 crystals synthesized in aqueous hydriodic acid.9
Figure 2A shows the absorption spectra of bulk γ-CsPbI3 (black) and δ-CsPbI3 (yellow)
converted from diffuse reflectance spectra (Figure S1). Raman scattering spectra are shown in
Figure S2. Using the direct band gap Tauc formalism for allowed transitions,22 we find the band
5
gap of δ-CsPbI3 synthesized through solid-state methods is 2.58(4) eV (Figure S3). By comparing
the heights of the absorption peaks, we estimate that the band edge absorption cross-section of γ-
CsPbI3 is 3.2x larger than that of δ-CsPbI3. The Tauc band gap of γ-CsPbI3 is 1.63(3) eV (Figure
S3), 90 meV smaller than the ~1.72 eV band gap reported for γ-CsPbI3 thin films synthesized by
heating δ-CsPbI3.4,8,16 Strangely, we find that after reaching a maximum near the band edge, the
absorbance of γ-CsPbI3 decreases with increasing energy to 3.5 eV indicating that the greatest joint
density-of-states is near the band edge, in contrast with traditional direct band gap
semiconductors.23 Our absorption spectrum for γ-CsPbI3 qualitatively matches a recent calculated
absorption spectrum for cubic α-CsPbI3
24 but differs from previous measurements on thin films of
γ-CsPbI3, which show an absorption coefficient increasing with energy and an excitonic absorption
resonance.8,16 In addition, smaller grain thin films show a greater increase in absorption at higher
energies.16 The shape of the absorption spectra and larger band gap for the thin film material are
signatures that thin film γ-CsPbI3 exhibits quantum confinement effects.25
Figure 2: (A) Optical absorption spectra of (black) γ-CsPbI3 and (yellow) δ-CsPbI3. (B)
Absorption spectra of γ-CsPbI3 converting to δ-CsPbI3, with (C) the band gap and fraction of
Tauc absorbance of γ-CsPbI3. (D) Cross-section of a piece of γ-CsPbI3 after 6 minutes in air.
6
We optically monitor the conversion of perovskite-phase γ-CsPbI3 to δ-CsPbI3 (Figure 2B)
by incompletely sealing γ-CsPbI3 in a diffuse reflectance powder cell. Over time, the absorbance
of γ-CsPbI3 decreases and its band gap increases to 1.70 eV (Figure 2C) while δ-CsPbI3
simultaneously appears in the absorption spectrum due to the reaction of γ-CsPbI3 with the
atmosphere. In addition, like previously reported spectra of thin film γ-CsPbI3 but unlike bulk γ-
CsPbI3, the absorption spectrum of the partially converted, wider band gap γ-CsPbI3 (orange,
Figure S4) does not show decreasing absorption at higher energies. By leaving a piece of bulk γ-
CsPbI3 in air for 6 minutes and then cross-sectioning it, we observe that the conversion to δ-CsPbI3
travels inwards from the outer surfaces (Figure 2D). These findings further support our inference
that the previously reported 1.72 eV band gap of γ-CsPbI3 is caused by quantum confinement
effects. Finally, the slower conversion of γ-CsPbI3 to δ-CsPbI3 as the size of γ-CsPbI3 particles
decreases (Figure 2B-C) supports that small grain sizes help to stabilize γ-CsPbI3.4,12
Humidity has been reported to convert perovskite-phase γ-CsPbI3 to δ-CsPbI3,8,11 and our
synthesis of kinetically stable bulk γ-CsPbI3 requires the use of rigorously dry reagents. The sample
shown in Figure 3A is made under identical conditions as the sample in Figure 1A but uses reagents
that are not completely anhydrous -- black γ-CsPbI3 slowly turns to yellow δ-CsPbI3 despite being
synthesized in an evacuated, nominally atmosphere-free ampoule. The stability of the strictly
anhydrous material in the evacuated tube indicates that the relatively small amount of water vapor
from the not-strictly-anhydrous starting materials has caused the γ-CsPbI3 to δ-CsPbI3 conversion.
The small amount of water present compared to the amount of material and the continuing γ to δ
conversion indicates that the role of water vapor is catalytic in accord with a previous report,8 and
that the yellow δ-CsPbI3 material is not a hydrate, in accord with the similarity of our δ-CsPbI3
7
SCXRD structure to a previous structure on crystals synthesized in aqueous hydriodic acid.9 In
contrast, we recently showed that what was originally reported as Cs2PdCl4 is actually a hydrate.26
To further investigate the effect of water vapor on γ-CsPbI3, we perform PXRD while
flowing gas in situ over ground powders of γ-CsPbI3. Figure 3B shows the PXRD pattern of γ-
CsPbI3 under flowing dry argon with a Rietveld refinement to our SCXRD structure shown in
red. Flowing dry oxygen over the sample does not result in any changes (Figure 3C). However,
flowing argon bubbled through deionized water over the sample to create a water-saturated,
oxygen and carbon dioxide-free ambient results in complete conversion to δ-CsPbI3 within 1
minute (Figure 3C). Figure 3D shows the PXRD pattern of the converted γ-CsPbI3 with a
refinement to our SCXRD structure shown in red, confirming complete conversion to δ-CsPbI3
and demonstrating the extreme moisture sensitivity of bulk γ-CsPbI3.
Figure 3: (A) Photograph of γ-CsPbI3 in evacuated ampoule made using non-anhydrous reagents
39 days after synthesis. (B) (black) PXRD pattern of γ-CsPbI3 under flowing dry argon, with
(red) Rietveld refinement and (blue) background. (C) PXRD patterns of γ-CsPbI3 under flowing
dry oxygen and humid argon. (D) (yellow) PXRD pattern of δ-CsPbI3 formed by flowing humid
argon over γ-CsPbI3 with (red) Rietveld refinement and (blue) background.
8
We demonstrate that bulk single crystals of perovskite-phase γ-CsPbI3 are kinetically stable
at room temperature in inert conditions despite their thermodynamic instability. We find that the
band gap of bulk γ-CsPbI3 is 1.63(3) eV, ~90 meV lower than the band gap of thin film γ-CsPbI3.
In addition, unlike thin film γ-CsPbI3, bulk γ-CsPbI3 does not have a distinct excitonic resonance,
and these differences suggest that thin film γ-CsPbI3 measured in previous studies8,16 exhibits
quantum confinement effects. Optical absorption measurements show that the greatest joint
density-of-states is near the band edge and decreases with increasing energy to at least 1.9 eV
beyond the band edge, in contrast to conventional semiconductors. Through synthetic variation
and in-situ PXRD measurements, we illustrate that water vapor catalyzes the conversion of γ-
CsPbI3 to δ-CsPbI3, and our SCXRD structure and optical characterization of bulk γ-CsPbI3
provide detailed parameters that can be used for more accurate theoretical modelling of the
properties, stability, and degradation mechanisms of γ-CsPbI3. Our results are vital for theoretical
and experimental studies on perovskite-phase CsPbI3 given that its bulk properties are differ from
what is observed for polycrystalline thin films and will help guide the design and synthesis of
atmospherically stable inorganic halide perovskites.
Acknowledgments
The synthesis and general characterization analysis of the compound was supported by the Gordon
and Betty Moore Foundation, grant GBMF-4412. The crystal structure refinement was supported
by the US Department of Energy, Division of Basic Energy Sciences, grant DE-SC0019331.
9
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Feng, Y.; et al. Thermodynamically Stable Orthorhombic γ-CsPbI3 Thin Films for High-
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13
Supporting Information: Kinetically Stable Single Crystals of Perovskite-
Phase CsPbI3
Daniel B. Straus, Shu Guo, and Robert J. Cava*
Department of Chemistry, Princeton University, Princeton, NJ 08544 USA
*Author to whom correspondence should be addressed. Email: [email protected]
14
Methods
A stoichiometric ratio of PbI2 and CsI are flame-sealed in a triple argon-flushed evacuated
(~10 mTorr) quartz tube and heated at 550 °C for several hours, forming a dark purple melt. To
form γ-CsPbI3, the melt is slowly cooled at a rate of 2-9 °C to 370 °C and then quickly quenched
in an ice-water bath, resulting in a shiny black solid. To directly synthesize δ-CsPbI3, the melt is
cooled to room temperature at a rate of 2 to 4 °C. Kinetically stable γ-CsPbI3 only forms when dry
PbI2 and CsI are used; we use ultra-dry PbI2 (Alfa-Aesar, 99.999%) either without further
purification or further purified by vapor transport, and either anhydrous CsI (Sigma-Aldrich,
99.999%) without further purification or CsI (Alfa Aesar, 99.999%) that is dried by placing the
CsI in a quartz tube, flame melted under dynamic vacuum, sealed in an evacuated quartz ampoule
with a piece of graphite to absorb residual moisture, heated to 650 °C overnight, and subsequently
cooled to room temperature. The not-completely anhydrous reagents used to synthesize the γ-
CsPbI3 shown in Figure 3A are CsI (Alfa Aesar, 99.999%) and PbI2 (Alfa Aesar, 99.9985%) used
without additional purification. All reagents are stored in an argon glove box with O2 and H2O
levels ≤ 0.1 ppm
To acquire SCXRD data on γ-CsPbI3, an evacuated quartz ampoule containing γ-CsPbI3
synthesized using dry reagents is opened in an argon glove box. γ-CsPbI3 is placed in degassed
Parabar 10312 oil and removed from the glove box in a sealed vial. When selecting crystals for
SCXRD, dry nitrogen flows over the crystals and an Oxford Cryostream flows dry nitrogen at 295
K over the sample while it is measured on the diffractometer.
SCXRD data on are collected at 295 K on γ-CsPbI3 with a Bruker Kappa Apex2 CCD
diffractometer and on δ-CsPbI3 with a Bruker D8 Venture diffractometer equipped with a Photon
15
100 CMOS detector. Dry nitrogen at 295 K flows over both samples during collection. Graphite-
monochromated Mo-Ka radiation (λ = 0.71073 Å) is used. The raw data are corrected for
background, polarization, and the Lorentz factor and multi-scan absorption corrections are applied.
The structures are analyzed by the Intrinsic Phasing method provided by the ShelXT structure
solution program1 and refined using the ShelXL least-squares refinement package with the Olex2
program.2,3 The ADDSYM algorithm in PLATON is used to double check for possible higher
symmetry.4
UV-Visible diffuse-reflectance spectra are collected in an Agilent Cary 5000 spectrometer
using an Agilent Internal DRA-2500 diffuse reflectance accessory on powders diluted with dry
MgO to 10% w/w. Dry MgO is used as the reflectance standard. Scans are taken every 1 nm with
a 0.2 second integration time and a spectral bandwidth of 2 nm. For the data shown in Figure 2B,
scans are taken every 2 minutes. Diffuse reflectance spectra are converted to absorption spectra
using the Kubelka-Munk function. Band gaps are calculated using the algorithm in Ref. 5. Raman
spectra are taken on a Thermo-Fisher DXR Smart Raman instrument with a 780 nm HP laser.
Powder X-ray diffraction (PXRD) patterns are taken on a Bruker D8 Advance Eco with a Lynxeye
1D detector. A Bruker air-free sample holder is modified to flow gases over the powder in-situ
(Figure S5). Rietveld refinements are performed using Topas 5 using the SCXRD structures
reported herein with lattice parameters fixed and instrumental corrections allowed to vary.
16
Figure S1: Reflectance spectra of (black) γ-CsPbI3 and (yellow) δ-CsPbI3.
Figure S2: Raman scattering spectra for (black) γ-CsPbI3, (yellow) δ-CsPbI3, (grey) CsI, and
(orange) PbI2. γ-CsPbI3 shows Raman scattering to about 150 cm-1, with an additional peak at ~240
cm-1 that is likely a second order replica caused by quasi-resonant 1.59 eV excitation.6,7
17
Figure S3: Direct band gap allowed transition Tauc plots of (black) γ-CsPbI3 and (yellow) δ-
CsPbI3.
Figure S4: Select absorption spectra from Figure 2B.
18
Figure S5: Sample holder for in-situ gas flow during PXRD experiments.
19
Table S1: collection parameters for SCXRD structures
F(000)
Radiation
1184
MoKα (λ = 0.71073)
2Θ range for data collection/° 5.76 to 56.56
Index ranges
-11 ≤ h ≤ 11, -16 ≤ k ≤ 16, -9 ≤ l ≤ 11
Reflections collected
Independent reflections
7193
1231 [Rint = 0.0541, Rsigma = 0.0478]
Data/restraints/parameters
Largest diff. peak/hole / e Å-3
1231/0/28
1.61/-1.84
1184
MoKα (λ = 0.71073)
6.02 to 55.042
-13 ≤ h ≤ 13, -6 ≤ k ≤ 6, -23 ≤ l ≤ 23
31390
1145 [Rint = 0.0591, Rsigma = 0.0173]
1145/0/31
0.95/-0.65
Table S2: Fractional atomic coordinates (Å) and equivalent isotropic displacement parameters
(Å2)
Atom
x
γ-CsPbI3
y
z
U(eq)
Atom
X
y
z
U(eq)
δ-CsPbI3
0
0
0 0.03112(13) Pb1
0.66034(2)
0.75000 0.43800(2) 0.02803(8)
0.43839(17)
0.25000 0.02006(17)
0.0786(4) Cs1
0.58430(4)
0.25000 0.17092(2) 0.03520(11)
0.50303(16)
0.25000 0.56458(16)
0.0700(4)
0.19871(9) 0.03272(7)
0.30445(9)
0.0550(2)
I1
I2
I3
0.46809(4)
0.25000 0.38549(2) 0.02938(11)
0.79913(4)
0.75000 0.28721(2) 0.03251(11)
0.83673(4)
0.25000 0.50160(2) 0.03143(11)
Pb1
Cs1
I1
I2
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20
|
1911.12756 | 1 | 1911 | 2019-11-28T15:44:09 | Hybrid integration methods for on-chip quantum photonics | [
"physics.app-ph",
"physics.optics",
"quant-ph"
] | The goal of integrated quantum photonics is to combine components for the generation, manipulation, and detection of non-classical light in a phase stable and efficient platform. Solid-state quantum emitters have recently reached outstanding performance as single photon sources. In parallel, photonic integrated circuits have been advanced to the point that thousands of components can be controlled on a chip with high efficiency and phase stability. Consequently, researchers are now beginning to combine these leading quantum emitters and photonic integrated circuit platforms to realize the best properties of each technology. In this article, we review recent advances in integrated quantum photonics based on such hybrid systems. Although hybrid integration solves many limitations of individual platforms, it also introduces new challenges that arise from interfacing different materials. We review various issues in solid-state quantum emitters and photonic integrated circuits, the hybrid integration techniques that bridge these two systems, and methods for chip-based manipulation of photons and emitters. Finally, we discuss the remaining challenges and future prospects of on-chip quantum photonics with integrated quantum emitters. | physics.app-ph | physics | Hybrid integration methods for on-chip
quantum photonics
JE‐HYUNG KIM1, SHAHRIAR AGHAEIMEIBODI2, JACQUES CAROLAN3, DIRK
ENGLUND3*, AND EDO WAKS2,4*
1Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
2Department of Electrical and Computer Engineering and Institute for Research in Electronics and Applied Physics, University of Maryland,
College Park, Maryland 20742, United States
3Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139,
United States
4Joint Quantum Institute, University of Maryland and the National Institute of Standards and Technology, College Park, Maryland 20742,
United States
*Corresponding author: [email protected], [email protected]
Abstract. The goal of integrated quantum photonics is to combine components for the generation, manipulation, and detection of
non‐classical light in a phase stable and efficient platform. Solid‐state quantum emitters have recently reached outstanding
performance as single photon sources. In parallel, photonic integrated circuits have been advanced to the point that thousands of
components can be controlled on a chip with high efficiency and phase stability. Consequently, researchers are now beginning to
combine these leading quantum emitters and photonic integrated circuit platforms to realize the best properties of each technology.
In this article, we review recent advances in integrated quantum photonics based on such hybrid systems. Although hybrid
integration solves many limitations of individual platforms, it also introduces new challenges that arise from interfacing different
materials. We review various issues in solid‐state quantum emitters and photonic integrated circuits, the hybrid integration
techniques that bridge these two systems, and methods for chip‐based manipulation of photons and emitters. Finally, we discuss
the remaining challenges and future prospects of on‐chip quantum photonics with integrated quantum emitters.
compared to bulk‐optical approaches. Such advances have enabled
proof‐of‐principle demonstrations of quantum protocols, such as
foundational tests of quantum mechanics [11], quantum simulation
The laws of quantum mechanics promise information processing
[12,13], and quantum machine learning [14]. Generally, such
technologies that are inherently more powerful than their classical
demonstrations are comprised of three distinct components -- the
counterparts, with examples including quantum computing [1],
generation of quantum states of light, their propagation through linear
unconditionally secure communications [2], and quantum‐enhanced
and nonlinear optical circuitry, and single photon readout. Bringing
precision sensing [3]. After decades of intensive theoretical and
these components together into a single integrated system could enable
experimental efforts, the field of quantum information processing is
a new generation of quantum optical processors capable of solving
reaching a critical stage: quantum computers and special‐purpose
practical problems in quantum chemistry [15,16] and inference [17,18].
quantum information processors may solve problems that classical
However, fully integrating the generation, manipulation, and
computers cannot [4‐6], and quantum networks can distribute
detection of photons is an outstanding challenge for the field due to the
entanglement over continental distances [7].
unique material requirements for each distinct component. For
Photons are a promising system to realize quantum information
example, epitaxially grown III‐V semiconductor quantum dots are a
processing applications due to their low noise properties, excellent
leading approach for the near‐deterministic generation of single
modal control, and long‐distance propagation [8]. These properties
photons in terms of purity, brightness, and indistinguishability
enable all‐optical quantum technologies [9] and photonic interfaces
[19]. However, the loss per component of III‐V platforms is relatively
between matter qubits [10]. By leveraging advances in photonic
high, and likely not at the level required for a large‐scale photonic
integrated circuits (PICs) for classical optical communications,
quantum technology [20]. In contrast, silicon photonics is unrivaled in
integrated quantum photonics enables the chip‐scale manipulation of
terms of component density, scale, and compatibility with
quantum states of
light, demonstrating orders of magnitude
complementary metal -- oxide -- semiconductor (CMOS) electronics [21],
improvements in component density, loss, and phase stability
with classical systems featuring over 1000 active components [22] and
1. INTRODUCTION
Fig. 1. Schematic of a hybrid integrated quantum photonic circuit consisting of different modules for the generation, linear and non‐linear manipulation,
and detection of non‐classical light on a single chip. These individual modules are shown in more detail in the lower row of panels. Quantum emitters
generate photons and route them to low‐loss photonic waveguides. The combination of directional couplers and phase shifters enable arbitrary linear
operations on the photons. The use of optical nonlinearities by resonant photonics (e.g., ring‐resonators) as well as light‐matter interactions expand
the functionality of quantum photonics to the non‐linear regime. Lastly, efficient on‐chip single photon detectors can read‐out the photons without the
need for lossy photon extraction from the chip.
Since the solid‐state medium hosts the quantum emitters, they do
integration with millions of transistors [23]. Moreover, silicon‐photonic‐
not require a complicated trapping setup, which is essential for cold
based quantum systems have demonstrated control of > 100
atoms and trapped ions. However, the solid‐state environments create
components [24] as well as the generation of entangled states of light
[25]. However, methods to generate photons in silicon are based on
several issues such as limited light extraction efficiency, randomness of
spontaneous processes, such as four‐wave mixing [25], or are
the position and frequency, and dephasing induced by interaction with
charges and phonons in the quantum emitters. Initial efforts to solve
incompatible with deterministic solid‐state quantum emitters at visible
these issues have focused on efficient generation of single photons by
or infrared wavelengths.
employing various micro/nanophotonic structures, including photonic
Hybrid integration provides a potential solution by incorporating
crystals, photonic nanowires, microdisks, and micropillars [Fig. 2(b)].
disparate photonic technologies into a single integrated system that
may not be otherwise compatible in a single fabrication process. Hybrid
Such structures dramatically improve the brightness of solid‐state
integration techniques include pick‐and‐place, wafer bonding, and
quantum emitters with enhanced light extraction [39,40], and also
epitaxial growth. In the context of quantum technologies, hybrid
improve the collection efficiency and generation rate of single photons
by far‐field engineering [33,41], and Purcell enhancement [42,43].
integration offers the tantalizing goal of bringing together quantum
Furthermore, researchers are continually developing techniques for
emitters, quantum memories, coherent linear and nonlinear operations,
controlling the emitters' position [44,45], frequency [46‐48], and
and single photon detection into a single quantum photonic platform as
described in Fig. 1. In this paper, we review the emerging field of hybrid
dephasing [28] [40], which have brought solid‐state quantum emitters
integration
to the forefront of quantum light sources. Comprehensive reviews on
for next‐generation quantum photonic processors,
solid‐state emitters and important developments can be found in Ref.
including platforms for quantum emitters and PICs, as well as
[26,49] Recently, to achieve scalable and integrated quantum photonic
techniques for their hybrid integration. Additionally, we explore on‐chip
methods for achieving coherent control of quantum photonic systems.
systems, significant efforts have been made to realize monolithically or
heterogeneously integrated quantum emitters with photonic circuits
[Fig. 2(c)]. These on‐chip integrated emitters serve as internal and
deterministic quantum light sources for PICs. However, manipulating
Solid‐state quantum emitters provide an essential building block for
multiple quantum emitters in the photonic circuits poses new
photon‐based quantum technologies with their ability to produce single
challenges. We discuss recent key developments and issues in on‐chip
photons or entangled photon pairs in a deterministic manner [26,27].
integrated quantum emitters in photonic circuits in sections 4 and 5.
To date, various types of solid‐state quantum emitters, including
quantum dots and atomic defects in crystals, have demonstrated single
photon emissions with high purity and indistinguishability [19,28], as
well as the potential for room‐temperature operation [29‐31] and
compatibility with electrically‐driven devices [32]. Also, their emission
wavelength ranges from ultraviolet to near infra‐red, which includes
PICs provide a compact, phase stable, and high‐bandwidth platform
telecom wavelengths [31,33]. New solid‐state quantum emitters are
to transmit, manipulate, and detect light on‐chip. By leveraging
continually being reported in 2D materials [29,34] and perovskite
advances in semiconductor manufacturing for classical communication,
nanocrystals [35], as well as for various crystal defects [30,36‐38] [Fig.
PICs have been demonstrated with over a thousand active components
2(a)].
in a few square mm [50]. Now, with many foundries offering multi‐
3. PHOTONIC INTEGRATED CIRCUIETS FOR QUANTUM
PHOTONICS
2. SOLID‐STATE QUANTUM EMITTERS
A. Material Platforms
Fig. 2. (a) Various solid‐state quantum emitters from single excitons in quantum dots, atomic defects in crystals, and exciton or defects in 2D materials.
(b) Quantum emitters integrated with micro/nanophotonic structures, such as photonic crystals, photonic nanowires, micropillars, and microdisks.
(c) Monolithic integration of the quantum emitter with an on‐chip waveguide and the hybrid integration of the quantum emitter in a nanobeam (green
color) on a heterogeneous photonic circuit. The blue and red spheres in (b) and (c) represent quantum emitters and single photons, respectively.
In terms of emerging quantum photonic platforms, LiNbO3
project wafer runs in a variety of material platforms, the end‐user can
access complex PICs in a cost‐effective manner, expanding the
possesses strong electro‐optic and acousto‐optic properties [60,61] [Fig.
application areas of integrated photonics. Due to these favorable
3(c)] and has a large transparency window of 350‐4500 nm, making it
properties, PICs have emerged as a promising platform with which to
appealing for hybrid integration. Due to the challenges in etching the
material, initial efforts to develop waveguides in LiNbO3 relied on
generate and control quantum states of light at a scale required for
practical optical quantum technologies [9,21]. In the context of hybrid
titanium diffusion or proton exchange. However, the low refractive
integration, a PIC serves as a "photonic backbone" both to route and
index contrast limited the scale of the devices [60]. More recently,
process single photons with high‐fidelity, and to directly engineer the
advances in processing have enabled high‐confinement nanophotonic
waveguides fabricated from thin film LiNbO3 on insulator, with losses as
quantum emitter characteristics. When designing a photonic backbone,
low as 2.7 dB/m [62] at telecom wavelengths and 6 dB/m at visible
a number of key features should be considered, including loss budget,
wavelengths [63]. Additionally, such waveguides have been integrated
material compatibility, wavelength compatibility, manufacturability,
with quantum emitters [64]. AlN has also emerged as a promising
modulation requirements, and power budget. In the following, we
platform for visible photonics [65], with a large transparency window
examine a number of such features.
[66] and modulation enabled by an intrinsic electro‐optic [67] and
piezoelectric effect [68]. Alternatively, III‐V materials, such as InP, can
enable the direct integration of active layers of quantum wells or
quantum dots during the epitaxial growth process. III/V materials allow
Many material platforms exist, each with varying levels of
monolithic integration of light sources in photonic platforms [69][Fig.
maturity. For example, silicon photonics benefits from an advanced
3(d)]. However, compared to other materials, III‐V‐based PICs tend to
silicon‐on‐insulator (SOI) manufacturing process that enables co‐
have higher propagation loss around 2 dB/cm [70], and have a low
integration of photonics and CMOS electronics, enabling thousands of
bandgap energy which prohibits the use of visible light.
opto‐electronic components on a single chip [24] [Fig. 3(a)]. Moreover,
the high refractive index contrast between the Si core and SiO2 cladding
Δ(cid:1866)(cid:3404)(cid:4666)(cid:1866)(cid:2913)(cid:2925)(cid:2928)(cid:2915)(cid:2870) (cid:3398)(cid:1866)(cid:2913)(cid:2922)(cid:2911)(cid:2914)(cid:2870)
(cid:4667)/2(cid:1866)(cid:2913)(cid:2925)(cid:2928)(cid:2915)(cid:2870) (cid:3406)0.8enables compact componentry,
which, alongside low propagation losses (as low as 2.7 dB/m [51]),
A key consideration for PICs for hybrid integration of quantum emitters
enables low loss per component [21].
is modulation at emitter‐compatible cryogenic temperatures (< 10
In the context of hybrid integration, one limitation of the SOI
K). Fast, low‐loss modulation is critical for multiplexing [71], high‐
platform is a bandgap at ~1.1 µm, as many solid‐state quantum emitters
fidelity linear optical operations [72], and wavepacket engineering
generate photons below this wavelength, causing significant loss. An
[73]. Materials with appreciable (cid:2031)(cid:4666)(cid:2870)(cid:4667)coefficients, such as LiNbO3 [74]
approach for overcoming this limitation is to use telecom‐compatible
and AlN [65,74,75], enable switching via the Pockels effect, which is, in
quantum emitters, such as InAs/InP quantum dots [33,52,53], defect
principle, not limited by cryogenic temperatures. Meanwhile, materials
centers in SiC [30] and GaN [54], and rare‐earth‐based quantum
memories [55]. Moreover, the integration of these emitters into the SOI
without an appreciable (cid:2031)(cid:4666)(cid:2870)(cid:4667) coefficient, such as Si or Si3N4 must rely on
platform has been demonstrated [56]. Alternatively, one can move to a
effects
[76],
the
waveguide material with a higher bandgap energy. For example, Si3N4
thermo‐optic effects
microelectromechanical effects
is transparent above 400 nm, and low‐pressure chemical vapor
[78]. Plasma‐dispersion modulators, which rely on fast injection or
deposition techniques onto a SiO2 layer provides a high‐quality Si3N4
depletion of carriers on fast timescales, have been demonstrated in Si
layer with precisely controlled thickness. The moderate index contrast
microdisks at cryogenic temperatures [79], but the introduction of
Δ(cid:1866)(cid:3404)0.25, alongside low surface roughness, enables waveguides with
carriers causes loss which may be undesirable for quantum
ultra‐low‐losses of 0.1 dB/m [57] (at the cost of a larger bend radius and
applications. Thermo‐optic
been
therefore greater device footprint), which is important for on‐chip delay
demonstratedat cryogenic temperatures [80], however, the thermo‐
lines [58] [Fig. 3(b)]. Recently, Si3N4 has been included into the SOI
optic coefficient d(cid:1866)/(cid:1856)T of both Si3N4 and SiO2 decreases by an order of
foundry process enabling 3D integration [59].
magnitude.
plasma‐dispersion
[77], or
Si3N4 modulators
effect
have
B. Cryogenic Modulation
such
as
A. Random dispersion
Fig. 3. (a) Optical image of a programmable Si PIC composed of 88 Mach‐Zehnder interferometers, 26 input modes, 26 output modes, and 176 phase
shifters [24]. (b) Top view of a Si3N4 waveguide coil (a 3 m‐long spiral pattern) illuminated with a red laser [58]. (c) Scanning electron microscopy
image of a LiNbO3 photonic circuit consisting of a Kerr comb generator and an add‐drop filter based on large χ(3) and χ(2) of LiNbO3 [61]. (d) Cross‐
sectional scanning electron microscopy image of the epitaxial structure of an InGaAsP waveguide, including active quantum wells (QWs) [69].
An alternative approach is to incorporate materials with a strong
scalability. The current state‐of‐the‐art for hybrid integration of the
Pockels effect into a non‐electro‐optically active material via hybrid
quantum emitters onto photonic circuits is summarized in Table 1.
integration. Organic polymers [81], LiNbO3 [82], and electro‐active
oxides [83] have all been incorporated into Si. Notably, barium titanate
possesses an exceptionally strong Pockels coefficient of 1000 pm/V at
room temperature [84] and its integration with both Si and Si3N4 has
Quantum emitters in the form of nanoparticles, such as colloidal
been demonstrated at cryogenic temperatures, maintaining a Pockels
quantum dots or diamond nanoparticles, can be simply integrated with
coefficient of 200 pm/V [85] (compared with LiNbO3 of 30 pm/V at
photonic structures by dispersing them onto the photonic platforms
room temperature).
[87,88] [Fig. 4(a)]. Since the nanoparticle quantum emitters are not
Breakthroughs in hybrid integration of PICs for quantum photonics
hosted in a dielectric medium, they can efficiently emit single photons
will benefit from a two‐step approach: advances in PIC technology will
without the problem of total internal reflection, a major issue for
open up new opportunities for hybrid integration, and fully
quantum emitters in a bulk medium. However, the nanoparticles
understanding the unique requirements of quantum technologies will
themselves possess a large surface area, which often leads to optical
help direct PIC research.
instability, such as blinking or bleaching, due to the significant influence
of the surface states and enhanced Auger process [89]. Therefore,
additional surface treatment or environmental control may be required.
The simple dispersion method does not precisely control the
PICs can efficiently manipulate and route light across the chip. To
position of the emitters, instead randomly places them near the
perform quantum information processing tasks, however, quantum
photonic structures (e.g., waveguides or cavity structures). This fact
light sources are required. These photons can be externally generated
limits the use of the random dispersion method for quantum photonic
outside the chip and brought to it with various coupling techniques, or
applications where the deterministic coupling of multiple quantum
internally generated using the nonlinearity of the waveguide materials
emitters with high coupling efficiency is crucial. To improve the coupling
[86]. However, both approaches are currently falling short of the
efficiency, it is possible to selectively disperse the nanoparticles using
demanding efficiency requirements for complex quantum information
lithography‐based masking [90] or tip manipulation of the particles in
processors [22]. A promising alternative is to integrate bright quantum
an atomic force microscope [91]. Therefore, with proper surface
emitters onto PICs directly. This could be beneficial for many aspects of
encapsulation and precise positioning techniques, this method could be
the system, such as increased efficiency, scalability, stability, and
an easy way to prototype and realize hybrid platforms.
controllability. However, creating a hybrid platform between the
quantum emitter and the photonic circuit with efficient and
deterministic coupling is a challenging task, and certain criteria must be
considered. In this section, we review multiple techniques for hybrid
integration and their ability to maintain high crystal quality and efficient
optical coupling between the platforms, as well as their potential for
4. HYBRID INTEGRATION TECHNOLOGY
B. Epitaxial growth of hetero‐structures
Fig. 4. Schematics of various hybrid integration methods for the
quantum emitters on the photonic platforms. (a) Randomly dispersed
nanoparticles in the vicinity of photonic structures, such as a microdisk
or a photonic crystal cavity. (b) The epitaxial growth technique can be
used to deposit layers such as GaAs on a Si substrate with a buffer layer
(not shown). (c) Wafer‐bonding technique to form a heterostructure of
a III‐V layer on a Si substrate. (d) Pick‐and‐place process by transfer
printing a nanobeam containing quantum emitters on a waveguide,
using a rubber stamp. (e) Pick‐and‐place process using a microprobe
that places a nanobeam on a waveguide. Quantum emitters are
embedded in the nano‐structure.
Optically stable single photon emission with high single photon
purity and indistinguishability can be generated from quantum emitters
embedded in a high crystalline bulk medium, which can be achieved
from epitaxially grown quantum dots or defects in a diamond film. Using
the epitaxial growth technique, growing quantum materials directly on
a photonic platform can provide hybrid hetero‐structures for both
emitters and photonic circuits in a single wafer. For example, hybrid
hetero‐structures of III‐V compound semiconductors on Si, which are
particularly important for realizing many optoelectronic applications
[21,92], can be achieved using the epitaxial growth method [Fig. 4(b)].
However, growing such hetero‐structures is not always favorable, often
sacrificing the crystal quality due to the formation of antiphase
boundaries and large mismatches in the materials' lattice constants,
thermal coefficients, and charge polarity. To maintain crystal quality, a
buffer layer needs to be inserted between the hetero‐structures, and
therefore, the quantum emitters require enough distance from the
boundary, which reduces the coupling efficiency with the photonic
circuits. Although the epitaxial growth of quantum materials on
photonic circuits is still challenging, several new approaches, such as
selective area growth and defect trapping, are being developed [93].
Therefore, this method still has strong potential for future on‐chip
hybrid quantum photonic devices.
C. Wafer‐bonding
Another well‐known method for integrating dissimilar material
platforms is the wafer‐to‐wafer bonding technique, an example of which
is shown in Fig. 4(c) [94]. Since each material is grown separately using
its own optimized equipment and conditions, this method can maintain
high crystal quality for both compounds and provide various material
options that are more limited in the monolithic epitaxial growth
technique. The wafer‐bonding technique is also useful to couple the
emission of quantum emitters to the photonic circuits since the emitters
are placed on top surface of the transferred wafer with a thin capping
layer, and the bonding process flips and bonds this top surface to the
photonic wafer. Therefore, controlling the thickness of the capping layer
of the emitters determines the distance between the emitter and the
photonic circuits. The removal of the original substrate of the quantum
emitters leaves a thin membrane structure on top of the PIC. With these
hybrid hetero‐structures, we can configure complicated electronic and
photonic structures using micro/nanolithography techniques [62].
Figure 5(a) shows a quantum dot wafer orthogonally bonded to the side
of a SiON photonic circuit, and Figure 5(b) shows a fabricated GaAs
nanowire on a Si3N4 waveguide after the wafer bonding process of two
wafers. One remaining problem for this technique is the random
position and frequency of the emitters. Since the wafer‐bonding method
integrates two platforms on a wafer scale, without precise control of the
position and frequency of the individual emitters, the actual coupling
efficiency and yield remain low. However, recently developed
techniques for site‐controlled emitters [44,45], in‐situ lithography
[95,96], and local frequency tuning [46,62,97] may provide possible
solutions for these issues. Figure 5(c) shows that the position of the
quantum emitters in the bonded wafer is pre‐defined by cathode
luminescence in scanning electron microscopy, and the device is
fabricated by in‐situ electron beam lithography technique.
In the wafer‐bonding technique, the independent growth of the
materials for the quantum emitters and photonic platform preserves
the crystal quality and provides hybrid hetero‐structures at the wafer‐
scale. However, one limitation of this method is the reliance on random
coupling between the emitters and photonic chips. To overcome this
problem, a number of groups have suggested the pick‐and‐place
method that transfers small‐scale quantum devices one‐by‐one instead
of wafer‐scale integration. This single device transfer method allows the
emitters to be pre‐characterized before assembly [98,99], and therefore
it is possible to selectively integrate desired emitters at a specific
position of the photonic circuits. Another important feature of the pick‐
and‐place method is that users are free to choose not only the materials
but also the dimension and design of device structures for the emitters
and photonic circuits, which is limited for pre‐integrated wafers.
Therefore, the two independently‐designed systems can have more
flexibility and functionality for controlling the emitters and photons on
a chip. For example, the quantum emitters can be integrated with more
complicated cavity structures to increase the radiative recombination
rate and enhance the light‐matter interaction strength [100]. Also, the
pick‐and‐place technique can integrate various types of quantum
materials, such as one‐dimensional vertical nanowires [101,102] and
two‐dimensional van der Waals materials [103‐105] that host the
quantum emitters inside. This technique has also been successfully
exploited to realize the integration of single photon detectors on a
photonic circuit [106].
To detach the quantum emitter devices from the original wafer and
release them onto pre‐patterned photonic circuits, various methods
have been demonstrated. A transfer printing method shown in Fig. 4(d)
is one well‐known example of the pick‐and‐place technique that uses an
D. Pick‐and‐place
adhesive and transparent rubber stamp made of a material such as
polydimethylsiloxane. With the pick‐and‐place method, assembling two
pre‐fabricated devices with high alignment accuracy is a crucial
requirement since it significantly affects the coupling efficiency of the
integrated emitters with the photonic chip. The use of transparent
stamps enables the user to monitor the alignment in real‐time with an
optical microscope [see Fig. 5(d)], and additional alignment markers can
increase the alignment accuracy [107,108]. In this case, the alignment
accuracy is limited by the optical diffraction limit of around a few
hundred nm for visible light. Another experimental challenge of this
technique is the limited ability to re‐position the emitters since the
adhesion between the integrated structures is much stronger than their
adhesion to the stamp. Therefore, the stamp cannot pick up the emitters
again. Also, the stamping process tends to induce force over a large area
and causes unwanted damage to the photonic circuit, such as physical
damage on the photonic structures or detachment of the deposited
metal electrodes. Introducing a carefully designed micro‐stamp may
avoid these problems [109] and could be used for highly integrated and
fragile platforms.
Another effective technique for the pick‐and‐place approach is
using a sharp micro‐probe [56,101,102,110,111] [Fig. 4(e)]. A few
micron or sub‐micron‐sized probe tip can pick up quantum emitters
and transfer them onto the target position in either an optical [see Fig.
5(e)] or an electron microscope system [see Fig. 5(f)]. In particular, the
latter environment significantly improves the alignment accuracy over
the transfer printing method. Additionally, using the probe tip, it is
possible to change the emitter position for better alignment accuracy
even after integration. Furthermore, the sharp probe tip can pick up
fragile single nanowires grown along the vertical direction [101,102]
[Fig. 5(e)]. Even though handling quantum devices one‐by‐one with the
pick‐and‐place technique requires a sophisticated process for the
precise control of single devices, it provides the highest accuracy and
controllability. Additionally, the process is compatible with various
materials and structures. Further efforts for simplifying and automating
the process may enable scalable and rapid fabrication of on‐chip
quantum photonic platforms with multiple deterministically integrated
emitters.
Fig. 5. Experimental demonstrations of hybrid integration of quantum emitters with photonic circuits using different integration techniques. (a) Optical
image and schematics of integrated InAs quantum dots on a SiON photonic chip made by the orthogonal wafer‐bonding method [112]. (b) A GaAs
nanobeam on a Si3N4 waveguide by electron beam‐lithography from a wafer‐bonded GaAs/Si3N4 heterostructure [62]. (c) The left panel shows a
schematic of in situ electron beam‐lithography of a GaAs nanobeam aligned to a preselected QD. The right panel shows an optical microscopy image
of fabricated devices (GaAs and Si3N4 colored in yellow and green, respectively) [96]. (d) Optical image of integrated InAs quantum dots (QDs) on a Si
waveguide using a transfer printing method [107]. (e) Optical image of the transferred single nanowire‐quantum dots on a Si3N4 waveguide using a
microtip, with insets showing (1) picked nanowires (NW) on a tip and (2) integrated NWs on waveguides [102]. (f) Scanning electron microscopy
image of an integrated InP nanobeam on a Si waveguide beamsplitter using a microprobe. Figure adapted from Ref. [56].
Table 1. Comparative Summary of Representative Demonstrations with Integrated Quantum Emitters on a Photonic Chip
Quantum
emitters
Quantum
dots
Quantum
dots
Quantum
dots
Quantum
dots
Quantum
dots
WSe2
Quantum
dots
Quantum
dots
Quantum
dots
Quantum
dots
Defect
Quantum
dots
Photonic
chip
Si3N4
Si3N4
SiON
GaAs
SOI
LiNbO3
SOI
SOI
SOI
LiNbO3
Si3N4
Si3N4
Coupling
efficiency **
72
3
8
63
70
0.7
15
‐
‐
‐
‐
1
Indistinguis
hability
‐
89
(At τ=0)
54
(At τ=0)
‐
‐
‐
‐
‐
‐
‐
‐
‐
Coupled
emitters *
1
(gas‐tuning)
1
20
(Stark tuning)
2
1
(temp. tuning)
1
1
1
(Stark tuning)
1
(temp. tuning)
1
1
1
(strain tuning)
Integration
g(2)(0)
Demonstration ***
Detection
Method
Wafer‐
0.13 (with
Weak coupling [62]
Fiber‐coupled
bonding
correction)
(microring resonator)
Wafer‐
Postselection using in‐
0.11
Fiber‐coupled
bonding
sutu lithography [113]
Wafer‐
On‐chip HOM[114]
Fiber‐coupled
0.23
bonding
(grating coupler) Weak coupling [108]
Free space
Transfer
0.23
(nanobeam cavity)
printing
Free space
(grating coupler) Weak coupling [107]
Transfer
0.3
(nanobeam cavity)
printing
Transfer
Waveguide
‐
Fiber‐coupled
printing
coupling [105]
Free space
Micro
0.25
On‐chip HBT [56]
(grating coupler)
probe
Free space
Large frequency
Micro
0.12
tuning [97]
(grating coupler)
probe
Free space
On‐chip frequency
Micro
0.25
(grating coupler)
filtering [115]
probe
Micro
Free space
0.08
On‐chip HBT [64]
probe
(grating coupler)
On‐chip integration of
0.07 (free space)
Micro
Fiber‐coupled
0.17 (on‐chip)
quantum memory [99]
probe
On‐chip frequency
Micro
Fiber‐coupled
0.1
tuning of emitters and
probe
ring‐resonator [110]
* The coupled emitters denote the number of studied or controlled emitters. The tuning mechanism is shown in parentheses.
** The coupling efficiency is determined between the quantum emitters and the waveguide.
***HBT and HOM represent Hanbury Brown and Twiss and Hong‐Ou‐Mandel interference experiments, respectively.
case of InAs quantum dots, the linewidth is typically over a few tens of
μeV with the above‐band excitation at a low temperature of 4 K, while
their radiative decay time is as short as 1 ns, corresponding to a sub μeV
Along with the efficient integration of quantum emitters with
homogeneous linewidth [118].
photonic circuits, controlling the quantum emitters to be identical to
Recently, a number of groups have reported near transform‐limited
each other is essential to meet the criteria for quantum operation based
linewidth based on resonant [19,40] and quasi‐resonant [119] methods.
on multiple, indistinguishable single photons. Furthermore, to establish
Figure 6(a) shows the indistinguishable visibility of quantum dots
efficient quantum operation on a chip, the photonic circuits should route,
different excitation schemes: above‐band [33,120], quasi‐resonant
modulate, and detect the generated photons with minimal loss. In this
[19,119,121,122], resonant [19,123‐127], and two‐photon excitations
section, we introduce the promising techniques for on‐chip control of
[128]. We note that increasing the degree of indistinguishability strongly
the emitters and photons as well as recent demonstrations of on‐chip
depends on the excitation scheme, and high indistinguishability does
quantum operation.
not sacrifice the brightness in the quantum emitters, whereas heralded
single photons from nonlinear processes have an inherent trade‐off
between the brightness and the indistinguishability [129]. Furthermore,
driving the quantum emitters with a resonant laser shows interesting
the Hong‐Ou‐Mandel
Two‐photon
phenomena based on atom‐photon interactions, such as Rabi oscillation
interferometer is the primary mechanism for achieving measurement‐
and Mollow triplet [130], and also provides a way to control the
based quantum interaction with photons [116]. The successful
quantum states of the emitters in a coherent manner, which is essential
interference relies on highly coherent and indistinguishable single
for quantum information processing [131].
photons, which requires a sufficiently long coherence time (cid:4666)(cid:2028)(cid:2870)(cid:4667)
One obstacle to the use of resonant excitation is a strong laser
compared to the spontaneous decay time (cid:2028)(cid:2869), that is (cid:2028)(cid:2870)(cid:3406)2(cid:2028)(cid:2869). However,
background scattered from the solid‐state chip. Since the resonant
the existence of phonon interactions and charge fluctuations in the solid‐
scattered laser cannot be filtered out from the single photons using a
state environment causes timing and spectral jitters as well as pure
spectral filter, it is necessary to employ other techniques for the
dephasing, and thus the emitters have a broad emission linewidth
separation of the two resonant signals. For example, a cross‐polarization
compared to their intrinsic linewidth limited by the lifetime [117]. Such
technique with a polarizing beam splitter combined with linear
linewidth broadening is worse with an above‐band excitation scheme
polarizers can selectively eliminate the laser background [132]. With an
that increases unnecessary interactions in solid‐state systems. In the
on‐chip device, the nanophotonic waveguide can also act as a
5. ON‐CHIP CONTROL OF QUANTUM EMITTERS AND
PHOTONS
A. Coherent control of quantum emitters
interference based on
polarization filter [119,133‐136]. Aligning the laser polarization
direction along the waveguide direction prohibits the laser propagation
in the waveguide [136]. Additionally, the large distance between the
excitation and collection spots reduces the scattered laser signal further,
as shown in Fig. 6(b). Employing a two‐photon excitation method can
also provide an alternative solution when the scattered laser light is
unavoidable [28].
Together with phonon
fluctuating charge
environment in the vicinity of the quantum emitters is another source of
dephasing [137]. To stabilize the charge environment, surface
passivation by adding a capping layer [138] or filling the charge trap
with electrostatic field control [139] have been suggested.
interaction, the
Fig. 6. (a) Comparison of the brightness and Hong‐Ou‐Mandel (HOM)
interference visibility from quantum emitters driven with various
excitation schemes: resonant (filled blue circles), quasi‐resonant (half‐
filled green circles), quasi‐resonant on‐chip (green half‐filled squares),
two‐photon (crossed purple circle), and above‐band (empty red circles).
Brightness is determined at the first lens or fiber. For the resonant
excitation, the values consider the polarization optics, essential for
suppressing the scattered laser and limiting the maximum brightness to
0.5 for unpolarized single photons. Quasi‐resonant indicates that laser
energy is lower than the wetting layer bandgap. (b) Schematic of
resonant excitation of on‐chip integrated quantum emitters in a
nanophotonic waveguide that separates the single photons from the
resonant excitation laser.
B. Generation of multiple, indistinguishable single photons
Having coherent single photons from a single quantum emitter
enables us to scale up to multiple indistinguishable single photon
emitters on a chip. This is particularly important for large‐scale photonic
quantum simulators, such as boson samplers [140] and large‐scale
entangled photonic cluster states [141]. The most conventional way to
produce multiple single photons is by parametric down‐conversion in
nonlinear media. However, this process is intrinsically probabilistic, and
multiphoton events are inevitable as the brightness is increased.
Therefore, the system becomes significantly inefficient with scale.
A bright single quantum emitter combined with a temporal‐to‐
spatial demultiplexing technique is one possible way to achieve multiple
single photons in a deterministic manner [Fig. 7(a)]. Multiple delay lines
and beam splitters can spatially distribute the temporal array of single
photons to multiple channels of the photonic circuit [124,142]. The
advantage of this method is that the system only needs one bright single
photon source with high purity and indistinguishability. For the
deterministic distribution of the photons in each channel, electro‐optic
routing devices can be incorporated instead of passive beam splitters
[142,143]. However, the degree of the indistinguishability decreases
with the temporal separation between the photons [144]. Therefore,
ultrafast electro‐optic switches would be required to obtain maximum
indistinguishability between photons. Furthermore, integrating a few
tens of ns long delay lines for compensating the time interval between
photons on a photonic circuit is a challenging task
Integrating multiple quantum emitters can offer a solution. The
main challenge of incorporating multiple quantum emitters in a single
chip is the frequency randomness of the quantum emitters, which limits
quantum interference between photons from individual emitters. To
eliminate this frequency mismatch between emitters, various local
frequency tuning methods have been introduced. For example, Figure
7(b) shows quantum dots integrated into multiple channels of a SiON
photonic circuit using wafer‐bonding. The emission frequency of the
integrated quantum emitters can be tuned independently by applied
electric fields. Similar approaches have also been demonstrated in the
InAs quantum dot‐Si waveguide hybrid system [Fig. 7(c)] [97]. Another
method of frequency tuning is by applying a local strain on the emitters.
Within a hybrid system, this can be achieved by integrating the emitters
on miniaturized piezoelectric actuator chips so that the platform can
induce a local strain to individual emitters in an array [Fig. 7(d)] [46‐48].
On‐chip‐integrated quantum emitters with matched frequency can
provide not only multiple indistinguishable single photons, but also an
outstanding platform to study many‐body quantum physics. For
example, multiple quantum emitters coupled to the same optical mode
form entangled superposition states known as Dicke states, resulting in
a super‐radiant emission with an increased spontaneous emission rate
[145]. In particular, integrating the emitters into a one‐dimensional
waveguide can realize long‐range interactions between the emitters
[146]. For example, Fig. 7(e) displays two far‐separated quantum
emitters coupled to a photonic crystal waveguide. When the frequencies
of two emitters are tuned to resonance by local temperature tuning, they
show superradiant emission as a result of collective behavior in a Dicke
state. To date, various solid‐state quantum systems have demonstrated
such interaction on a chip [47,147,148], and recently, the super‐
radiance has been achieved with three quantum emitters in a
waveguide with a local strain tuning method [47].
Along with the frequency control, the positional control of the
emitters is another important factor for generating quantum emitter
arrays with high coupling efficiency between the emitters and photonic
circuits. Depending on the types of emitters, various experimental
approaches have demonstrated deterministic positional control of the
emitters. For instance, site‐controlled quantum dots have been achieved
Fig. 7. (a) Schematic of the experimental setup for a boson sampler using a temporal‐to‐spatial demultiplexing technique with a single quantum dot
[142]. (b) Independently tunable multiple quantum dot device integrated with a SiON photonic chip. Figure adapted from Ref. [114]. (c) Illustration
and scanning electron microscopy image of the InAs quantum dot integrated with a Si substrate with a Stark tuning structure [97]. (d)
Microelectromechanical systems for anisotropic strain engineering of quantum dot‐based single photon sources [46]. (e) On‐resonant two quantum
dots in a photonic crystal waveguide with local heaters. The right panel shows superradiant emission as a result of the quantum interaction between
two emitters coupled to a single optical mode of the waveguide [147].
by employing pre‐patterned substrates or
three‐dimensional
quantum photonic system. Recent advances in PICs, as introduced in
nanostructures such as pyramidal structures [44]. Growing vertical
section 3, can highly integrate waveguides, beam splitters, phase
nanowires enables the placing of the single quantum dot in the middle
shifters, and delay lines in a single chip. Combining these components
of the nanowire, so the user can easily specify the position of the
can form tunable Mach‐Zehnder interferometers, playing a key role in
quantum dots during the growth process [149]. This nanowire
reconfigurable PICs [151].
structure is particularly useful for hybrid integration because it can
The use of quantum emitters as quantum light sources requires
additional photonic components to spectrally filter single photon
control the position and number of quantum dots and be easily
transferred into a photonic circuit with high coupling efficiency
emission from unwanted background emissions, including the
[102,110]. In the case of defects in crystals, ion‐implantation techniques
scattered laser. Such frequency sorters have been demonstrated by
enable the control of the position and density of the defects by changing
using nano‐photonic structures [101,115]. Figure 8(a) shows on‐chip
the dose value with the patterned mask [45]. Atomically thin 2D
integrated quantum emitters and a micro‐ring, acting as an add‐drop
materials are also of great interest as arrayed single photon sources
filter. Such add‐drop filters can sort out a narrow spectral line, and the
with their flexibility and tunability. For example, positioning quantum
resonant frequency can be tuned by controlling either the frequency of
emitters with 2D materials can be achieved by transferring the material
quantum emitters or the resonant mode of the add‐drop filter.
on nano‐patterned substrates, which induce a local strain that can form
The integrated nano‐photonic structures add more functionality to
PICs by enhancing optical nonlinearity. Frequency conversion of
strain‐induced quantum emitters at deterministic positions
photons is one representative example and is very useful for the
[48,104,105].
quantum emitters. Although, applying strain or an electric field on the
These successful demonstrations of local controls of quantum
quantum emitters can shift the emission frequency, the achievable
emitters' frequency and position on a chip show strong potential of PICs
tuning range typically remains below 10 nm. In contrast, the frequency
with integrated sources of multiple identical quantum emitters and
multiple indistinguishable single photons.
conversion using (cid:2031)(cid:4666)(cid:2870)(cid:4667) or (cid:2031)(cid:4666)(cid:2871)(cid:4667)nonlinearity in the nano‐photonic
structures such as a ring resonator acts on photons and offers a much
wider tuning range from a few tens of nm up to a few hundred nm.
Figure 8(b) shows a waveguide‐coupled resonator that converts the
emission frequency of the quantum emitters using four‐wave mixing
In the absence of direct photon‐photon interaction, requiring strong
Bragg scattering [152]. The fact that the frequency converter can match
Kerr nonlinearity, efficient quantum information processing can be
the emission frequency in a wide spectral range without local control of
established with quantum light sources, linear optical components, and
the emitters opens a new possibility of hybrid devices involving
detectors [150]. Using well‐developed bulk or fiber optics such as
different types of quantum emitters, such as InAs quantum dots with
mirrors, beam splitters, waveplates, and polarizers, we can easily
near IR emission and defects in diamonds with visible emission in a chip.
manipulate the quantum state of photons to encode and decode the
Such hybrid architecture will be very interesting because the system can
quantum information into the path, polarization, and time‐bin of the
provide efficient sources of photonic and spin qubits in the same chip,
photons. Realizing such optical components in PICs provides a
acting as quantum channels and memories, respectively.
promising solution for demonstrating a scalable and integrated
C. On‐chip manipulation of photons
D. Spin‐photon quantum interface
In the previous sections, we introduced on‐chip generation and
control of photons in PICs. Although photons provide an excellent
carrier for quantum information, the storage time and deterministic
interactions between photons are absent unless coupled to nonlinear
matter. Integrated quantum emitters can provide not only photonic
qubits but also spin qubits. Therefore, incorporating quantum‐specific
components, such as quantum memories and quantum gates, as well as
coherent nonlinear optical elements based on stationary qubits, enable
a wider range of photonic quantum information processing schemes
[153] [Table 2] and new opportunities for exploiting quantum optics.
For example, solid‐state quantum emitters with a ground‐state spin can
mediate photon‐photon interactions and store the information for a
long time [154]. Recent advances in atomic defects in diamond have
realized a coherent spin of over one second [155], and various new
from several wide‐bandgap
solid‐state spins are emerging
semiconductors, such as SiC [156] and hBN [157].
Quantum entanglement between spins and photons has been
demonstrated from various quantum emitters [131], and nano‐
photonic cavities or waveguides with strongly coupled quantum
emitters can provide efficient spin‐photon quantum interfaces by
tailoring the light‐matter interaction. In the context of cavity quantum
electrodynamics (QED), the spin‐photon interface controls the spin
state via the polarization state of photons and vice versa. Recent work
has demonstrated the conditional phase shift of photons [158], and
strong photon‐photon interaction [159] based on strongly coupled
cavity‐quantum emitter systems. Recent theoretical work also indicates
that dynamically switchable cavities can mediate deterministic photon‐
photon gates with high fidelity [160]. Figure 8(c) shows an experimental
demonstration of a single‐photon switch using the spin of a charged
quantum dot in a photonic crystal cavity. The result shows that
nanophotonic structures with coupled solid‐state spins can realize
single‐photon nonlinearity in a compact chip. Photon blockade is
another example of strong nonlinearity at a single‐photon level. The
strongly coupled cavity‐atomic system creates anharmonic ladder
states that can alter the photon statistics from coherent to sub‐
Poissonian or super‐Poissonian light sources and be used as photon
number filters [161].
Along with the high Q cavity, nanophotonic waveguides can also
mediate efficient spin‐photon interface using waveguide QED. The
slow‐light mode in the waveguide plays an important role in the
waveguide QED, which has a similar principle to the cavity QED. Since
the waveguides use propagation modes instead of localized modes, as
in the cavity, multiple quantum emitters at different positions can
couple to the waveguide and interact via real and virtual photons,
enabling long‐range connectivity. In addition, since the integrated
emitter efficiently couples to the propagating photons in a waveguide,
the emitter can induce strong optical nonlinearity at the single‐photon
level. Figure 8(d) displays an experimental demonstration of single‐
photon nonlinear optics in a waveguide that modifies the transmission
of the waveguide with a coupled quantum emitter [162].
Therefore, the light‐matter interaction with the integrated emitters
enables a vast range of practical applications, such as quantum
repeaters [163], quantum logic gates [158], photon‐photon gates [164],
single photon transistors [159], and photon number filters [165] in
integrated photonic circuits. The studies show the potential capability
of integrated quantum emitters as a source of photonic and stationary
qubits and a mediator on spin‐photon interfaces on a chip. However, so
far, most demonstrations were performed in monolithically integrated
platforms, which limits the number and function of the quantum
emitters. The hybrid integration methods can provide a solution for
scalable, integrated quantum photonic systems by the post‐assembly of
independently optimized emitters, cavities, and photonic circuits in a
single chip. Recently, on‐chip strong light‐matter interaction in a hybrid
system has been demonstrated with combined quantum emitters, high
Q cavity, and photonic waveguide as shown in Figure 8(e).
Fig. 8. (a) Frequency sorter based on a frequency tunable add‐drop filter [101]. (b) Frequency converter using the four‐wave mixing Bragg scattering
process [152]. (c) Schematic image of a single‐photon switch and transistor based on a single quantum dot in a photonic crystal cavity. The schematic
shows that a gate photon controls the state of the spin, and then the spin determines the polarization of the signal field [159]. (d) Schematic image of
controlled waveguide transmission with the coupled quantum emitter, showing a strong optical nonlinearity at a single‐photon level [162]. (e)
Demonstration of strong coupling between the quantum dot and the nanobeam high Q cavity on a Si waveguide [166].
Table 2. Representative Demonstrations of Quantum Took Kits for Integrated Quantum Photonic System
Basic principle
Long coherence time of spin
Related
work
[99]
[131,158]
Quantum entanglement between spins an photons
[159]
Strong optical nonlinear response mediated by emitters
[47,147,14
Cooperative behavior of emitters mediated by photons
8]
Photon blockade using anharmonic ladder system
[161]
be simultaneously controlled on a chip is increasing using several
approaches, introduced in section 4, those emitters still lack long
coherence times [47].
Another challenge is realizing efficient on‐chip quantum interaction.
We reviewed the possible mechanisms for such quantum interactions
in section 5, which included two‐photon interference using linear optics,
atom‐mediated nonlinear photon‐photon interaction in cavities, and
photon‐mediated atom‐atom interaction in waveguides. However, the
interference visibility, single dipole cooperativity, and entanglement
fidelity need to be further improved for a large‐scale quantum system.
To meet the performance criteria for deterministic quantum
information processing with photons, higher efficiency, scalability,
stability, and controllability of the emitter and photons are required.
Satisfying all these conditions may be implausible within a single
material. However, hybrid integration may pave the way by combining
efficient single photon sources, coherent spins, and high‐quality
nanophotonic structures, as well as spectral and spatial control of the
emitters and the photons.
E. On‐chip detection of photons
Quantum functional
Role
component
Quantum memory
Store information in a photonic circuit
Control a spin (photon) state with a
Spin‐photon quantum
photon (spin)
interface
Conditional photon switch
Photon‐photon gate
Large scale system involving multi‐
Integrated quantum node
emitter coupling
Photon number filter
Modification of photon statistics
Quantum information processing ends with the efficient readout of
the state of the photons. Since the photons travel along the waveguide
in photonic circuits, to be detected it is necessary to extract out on‐chip
propagating photons and couple them into an objective lens or a fiber.
To minimize the coupling loss, various methods have been suggested,
such as grating‐assisted coupling, evanescent coupling, tapered
waveguides, and end‐fiber coupling with a lensed fiber [167]. Although
several schemes exist for efficient free space‐ and fiber‐coupling, the
coupling efficiency largely depends on the alignment and wavelength.
The most desirable way for detecting propagating photons in a chip
is to integrate the detectors in the same chip. Single photon detectors
based on superconducting nanowires are of great interest for this
purpose because they can be fabricated on the photonic circuits directly
and offer a fully integrated on‐chip quantum photonic device, as shown
in Fig. 9(a) [136,168]. Additionally, superconducting nanowire‐based
detectors outperform other detectors in terms of single photon
detection characteristics, such as high efficiency of over 90%, fast
response time below 50 ps, and high operation rates of over 100 MHz in
a broad spectral range including the telecom wavelengths [169].
Furthermore, it is also possible to post‐integrate separately fabricated
detectors into the photonic circuits. For example, Figure 9(b)
demonstrates the hybrid integration of the superconducting nanowire
detector on a photonic waveguide using the pick‐and‐place technique
[170].
In this review, we have presented recent advances in integrated
quantum photonic systems that generate and manipulate quantum
light and establish spin‐photon interaction in a single chip. Solid‐state
quantum emitters now demonstrate high single photon generation
rates, purities, and indistinguishability, with controlled position and
frequency as well as spin with long coherence times. Meanwhile,
photonic circuits can manipulate photons in various degrees of freedom
using combined couplers, phase shifters, and linear/nonlinear
components on a chip. Recent approaches for the hybrid integration of
solid‐state quantum emitters with photonic circuits have shown a
possible solution for the long‐standing issue of lack of internal,
deterministic quantum light sources in the PICs. Also, integrating the
quantum emitters in PICs provides many quantum functional
components on a chip, and therefore it adds more functionality and
flexibility for on‐chip photonic quantum information processing.
However, despite this progress, realizing practical on‐chip quantum
photonic devices with integrated quantum emitters still faces many
challenges. The principal obstacle is the need to generate multiple
indistinguishable single photons from independently controlled
quantum emitters. Although the number of quantum emitters that can
6. REMAINING HURDLES AND OUTLOOK
Fig. 9. (a) Schematic description of the on‐chip detection of photons
using an integrated superconducting nanowire detector [168]. (b)
Integration of a single photon detector using a pick‐and‐place technique
[170].
For applications, an electrically‐driven system at room temperature
is of great
interest. Given the well‐developed technology of
semiconductor device manufacturing, electrically‐driven single photon
devices have been successfully demonstrated from various quantum
emitters at room temperature [31,171,172]. Although those devices can
efficiently generate single photons, the results have a lack of the
indistinguishability of the single photons. To avoid significant
spectral/timing jitters and dephasing induced by electrical excitation at
the above bands, integrating a miniaturized tunable laser on the same
chip has been suggested as a possible solution since it operates the
system electrically but excites the quantum emitters optically at a
resonant frequency [173,174]. For room‐temperature operation,
phonon interaction is unavoidable and broadens the emission linewidth,
limiting indistinguishability. Therefore, achieving coherent single
photons will be inherently difficult at high temperatures. However,
recently, phonon decoupling in a low‐dimensional system such as
defects in two‐dimensional hBN was reported, resulting in a Fourier
transform‐limited linewidth at room temperature [175].
Although it remains experimentally difficult to realize large‐scale
quantum photonic devices, the field of integrated quantum photonics is
rising with developing quantum photonic technological capability, and
it will provide a promising platform for various chip‐scale quantum
optics applications such as Boson sampling [176] and quantum
chemistry [13] and also for large‐scale photonic quantum processors
enabling photonic cluster state quantum computing [141] and optical
quantum networks [18,177]. Such integrated quantum photonic
circuits can also interface with electronic microprocessors that can
realize quantum‐enhanced processing [23]. While quantum simulators
and noisy intermediate‐scale quantum processors are now becoming
feasible [6,178], it is necessary to perform heuristic benchmarking on
various problem classes. Large‐scale systems with efficiently coupled
spins and photons on a chip present a promising path to such
applications.
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|
1809.03719 | 1 | 1809 | 2018-09-11T08:05:03 | An innovative, fast and facile soft-template approach for the fabrication of porous PDMS for oil-water separation | [
"physics.app-ph"
] | Oil wastewater and spilled oil caused serious environmental pollution and damage to public health in the last years. Therefore, considerable efforts are made to develop sorbent materials able to separate oil from water with high selectivity and sorption capacity. However most of them are low reusable, with low volume absorption capacity and poor mechanical properties. Moreover, the synthesis is time-consuming, complex and expensive limiting its practical application in case of emergency. Here we propose an innovative approach for the fabrication of porous PDMS starting from an inverse water-in-silicone procedure able to selectively collect oil from water in few seconds. The synthesis is dramatically faster than previous approaches, permitting the fabrication of the material in few minutes independently from the dimension of the sponges. The porous material evidenced a higher volume sorption capacity with respect to other materials already proposed for oil sorption from water and excellent mechanical and reusability properties.This innovative fast and simple approach can be successful in case of emergency, as oil spill accidents, permitting in situ fabrication of porous absorbents. | physics.app-ph | physics | An innovative, fast and facile soft-template approach for the
fabrication of porous PDMS for oil-water separation
A. Turcoa†, E. Primicerib, M. Frigionec, G. Marucciob, C. Malitestaa
Oil wastewater and spilled oil caused serious environmental pollution and damage to public health in the last years.
Therefore, considerable efforts are made to develop sorbent materials able to separate oil from water with high selectivity
and sorption capacity. However most of them are low reusable, with low volume absorption capacity and poor mechanical
properties. Moreover, the synthesis is time-consuming, complex and expensive limiting its practical application in case of
emergency. Here we propose an innovative approach for the fabrication of porous PDMS starting from an inverse water-in-
silicone procedure able to selectively collect oil from water in few seconds. The synthesis is dramatically faster than previous
approaches, permitting the fabrication of the material in few minutes independently from the dimension of the sponges.
The porous material evidenced a higher volume sorption capacity with respect to other materials already proposed for oil
sorption from water and excellent mechanical and reusability properties.This innovative fast and simple approach can be
successful in case of emergency, as oil spill accidents, permitting in situ fabrication of porous absorbents..
1. Introduction
Crude oil has been fundamental for human life from the
beginning of industrial civilization. However, in recent years, oil
spill accidents and leakage of organic liquids determined a huge
damage to ecological systems with consequences in health,
social and economic fields1 -- 3. An example is the oil leakage in
Gulf of Mexico in 2010, when an estimated release of 4.9 million
barrels of crude oil into the ocean occured causing a colossal
disaster for marine species, with long-term effects still
evaluable today4. Therefore, a wide variety of approaches has
been developed to separate oil from water, such as physical
sorption by sorbent materials, mechanical recovery by oil
skimmers5,6, in situ burning7, physical diffusion8, filtration
membranes9,10,
biodegradation.12.
However, their practical use still remains problematic due to the
low
cumbersome
instrumentation and/or the generation of secondary pollutants.
To solve these problems, the synthesis of lightweight porous oil
absorbent with high volume absorption capacity is one of the
most promising strategy13. These materials can separate oil
from water and concentrate organic liquids inside the pores,
permitting their transport and storage. Practical application also
need easy, fast and cheap fabrication and the possibility of the
sorbent material to be reusable to cut the costs of oil spill
recovery14. Different materials have been proposed for this aim,
such as carbon nanotubes and/or graphene sponges15 -- 20,
and
polystyrene
nanocomposite materials13. Despite their good performances in
water oil separation and mass sorption capacity, most of the
materials present drawbacks as poor durability, complex and
time-consuming fabrication and poor volume absorption
capacity.
separation efficiency,
the use of
centrifugation11
and
Polydimethylsiloxane (PDMS) is a polymeric material used in
many research fields due to its excellent characteristics such as
high hydrophobicity and flexibility, oleophilicity, thermal,
mechanical and chemical stability and easy fabrication. Recently
this material has been proposed in porous form as a good
candidate for water oil separation. The most widely-adopted
method to obtain this material is the sacrificial hard template
approach proposed for the first time by Choi et al.23 in 2011
where the authors fabricated reusable PDMS sponges with fast
oil absorption using sugar particles as template. The synthetic
steps included shaping of sugar templates and the use of
vacuum apparatus that complicate the large-scale production of
fibers21,
polyurethane
sponges17,22
in this case, the
the material. To solve these problems Zhang et al.24 proposed
an innovative synthesis in which hard template was easily
added to PDMS prepolymer diluted in p-xylene without the use
of expensive equipment. Despite the good oil absorption
properties of the sponges the synthesis still require a long
procedure to remove hard template from the polymeric matrix.
Zhao et al.25 synthesized sponges with high oil absorption by
diluting PDMS prepolymer in dimethicone and using sugar
particles as template. Also
large-scale
production of the material was prevented by the required use
of centrifuges and long procedure. To speed up the synthetic
procedure more recently Yu et al26 tried to substitute sugar
particles with citric acid monohydrate (CAM) as hard template
and dissolved them in ethanol. Taking advantage of the
superwettability of ethanol to the porous PDMS, CAM could be
easily removed from the porous PDMS
in shorter time
compared to previous approaches. However at least 6 hours for
a small piece of the material are still necessary to remove CAM
completely. However, due to diffusion of the solvent inside the
polymeric pores for the CAM solubilization, longer time is
needed for bigger sponges. Recently our group proposed an
approach in which PDMS prepolymer was infiltrated between
glucose crystals packed in a syringe, applying a positive pressure
on their surface. These sponges revealed excellent and
improved volume absorption capacity with respect other oil
absorbents without the use of cumbersome instrumentations
although the overall process still remains time-consuming13.
Consequently, all the proposed approaches appear time-
consuming and require environment-harmful solvents making
difficult their real application in case of emergency, where fast
material preparation and simple operations are required.
Moreover, most of them need the use of cumbersome
instrumentations for the preparation such as centrifugation or
vacuum operation that further complicate sponges production.
An attractive route to prepare highly porous and permeable
polymeric materials is represented by emulsion templating
method in which a high internal phase emulsion (HIPE) is
prepared. The external phase is converted to polymer and the
emulsion droplet are removed yielding a highly-interconnected
network of micron sized pores. Recently, a few of different
attempts have been performed to prepare microporous PDMS
by HIPE techniques. In 2015 Tebboth and collaborators27
produced an elastomeric PDMS containing an aqueous solution
of hydrogen carbonate (NaHCO3). Subsequently thermal
decomposition of NaHCO3 cause the release of carbon dioxide
into the polymer structure. Once placed the polymer under
reduced pressure it can expand to many time their original size.
Kovalenko et al.28 prepared soft porous PDMS by the UV
polymerization of inverse water-in-silicone PDMS emulsion in
presence of surfactants. The use of different reagents,
cumbersome instrumentations, long time synthesis limited the
large-scale synthesis and consequently the application of both
materials for water/oil separation. Here we propose an
innovative approach for the facile synthesis of highly porous
PDMS materials starting from an inverse water-in-silicone
procedure similarly to a modified emulsion templating
technique29. However we did not observe the presence of voids
and windows inside the pores characteristic of emulsion
templating approach30. The synthesis is completed in few
minutes and the obtained sponges presented swelling
properties and interconnected pores that favour absorption
and retention of various organic liquids with a high and fast
absorbency rate. Without the shaping of hard-template,
vacuum or centrifugation operation, the preparation strategy is
straightforward and dramatically
than previous
approaches. Moreover, the organic liquids can be easily
recovered by simply squeezing the sponges that can be thus
reused without loss of efficiency for hundreds of cycles.
faster
Experimental section
Chemicals
The PDMS prepolymer (Sylgard 184) and a curing agent were
purchased from Dow Corning. Hexane, dichloromethane,
chloroform, toluene, tetrahydrofuran, petroleum ether, ether,
and glucose were purchased from Sigma Aldrich and used as
received. Gasoline was purchased from Kuwait Petroleum
Corporation.
Preparation of PDMS-MWNTs sponges
Porous PDMS sponges were prepared according to the
following procedure. Unless otherwise indicated a continuous
phase consisting of PDMS prepolymer and the thermal curing
agent in a ratio of 10:1 by weight were placed into a
polypropylene tube and were diluted in hexane with a ratio
solvent/prepolymer equal to 8:2 and intensively stirred for 5
minutes. Then 50% wt. of Milli-Q water was added drop by drop
under continuous stirring in the continuous phase. After that
the solution was further mixed for 20 minutes more. After
stirring, the solution had the form of a viscous liquid. The tube
containing the as prepared emulsion was then placed in an oven
at 120°C for ten minutes to accomplish the polymerization.
Therefore, the obtained 3D porous PDMS was removed from
the polypropylene tube and used for the experiments. Different
PDMS sponges were prepared by changing different parameters
such as the concentration of the prepolymer, solvent to dilute
the pre-polymer, solvent used as dispersed phase, and the
amount of dispersed phase.
Oil absorbency and reusability of PDMS sponge
A piece of sample was immersed in a bath containing only oil at room
temperature for 20 minutes. After that, the sample was removed
from oil, wiped with filter paper in order to remove excess oil and
weighed. The oil mass sorption capacity (Mabs) and volume
absorption (Vabs) capacity were evaluated by using the following
equation:
Mabs = (m - m0)/m0
Vabs = (m - m0) ρ0/ρm0
where m is the weight of the sample after sorption, m0 is the initial
weight of the sample, ρ0 and ρ are density values of the absorbent
material and absorbed oil, respectively. Repeated absorption --
desorption cycles of oils were performed to evaluate sponge
reusability. For this purpose, the sample was immersed in oil until
the absorption equilibrium was reached (i.e. 20 min), and then
weighed to calculate the oil mass sorption capacity. The sample was
then squeezed and washed with ethanol three times and dried in an
oven at 60 °C. The absorption -- desorption procedure was repeated 3
times for each tested oil.
Characterization of the PDMS sponges
The dynamic and static contact angle measurements were carried
out using an OCA 15 Plus instrument (dataPhysiscs Instruments,
Filderstadt, Germany) equipped with a high resolution camera and
an automated liquid dispenser. SCA 20 software was employed to
obtain additional information on the samples; the software uses an
algorithm based on the Young Laplace equation and it allows to
correlate the shape of the drop with its surface tension and to
measure the contact angle between the liquid and the analyzed
surface.
Morphological characterization of PDMS sponges samples was
carried out by an inverted optical microscope (NIKON mod. DS-
5MC camera) in bright field mode. Nikon NIS-Elements ND2
software system has been used to measure pore size. Quasi-
static hysteresis compression tests were performed on a LLOYD
LR50K Plus dynamometer equipped with 50 mm diameter parallel
plate tools and a 50 kN load cell. Tests were performed by loading
the samples at different strain levels, equal to 60 and 90%. The
loading and unloading stages were performed at a rate of
deformation of 5 mm*min-1 and 10 mm*min-1 for 60% and 90%
strain, respectively.
The porosity (Φ) was measured with a methanol saturation method24
according to the following equation:
Φ= γsat -- γdry/ γmeth
Where γsat, γdry and γmeth indicate the densities of saturated PDMS,
dry oil absorbent, and methanol, respectively.
Results and discussion
Preparation of PDMS sponge
PDMS elastomer was chosen because of its intrinsic properties such
as elasticity, mechanical stability and hydrophobicity. PDMS oil
absorbents were synthesized starting from an inverse water-in-
silicone procedure (Figure 1a). Compared with the conventional
sugar-template methods, this approach avoids the use of vacuum
operation or centrifugation, the preparation of shaped salt template
beforehand and long washing procedure necessary for hard template
removal. An appropriate amount of water acting as soft template
was added to dilute prepolymer drop by drop under continuous
stirring to produce an emulsion. Then the emulsion was cured in
oven at 120°C. The emulsion was stable after the formation during
all the synthetic steps. No noticeable phase separation was observed
during the time necessary between emulsion formation and curing
in hexane
lead to a decrease
93%, higher than other PDMS porous material for which a maximum
of 84% of porosity was observed24. Both higher and lower dilution of
prepolymer
in porosity and
consequently in dichloromethane absorbency. This behaviour could
be explained by two different mechanisms. It is well known that non-
diluted prepolymer has a higher cross-linking degree that avoid
swelling of the polymer during oil uptake process decreasing its
absorbency24,25. If more hexane is required to dilute prepolymer, less
is the cross-linking degree of the PDMS, therefore increasing hexane
amount more swellable sponges with higher absorption are
obtained. Moreover, non-diluted prepolymer could polymerize
faster and with a higher cross-linking degree preventing pore
enlargement during evaporation of the soft-template addressing
smaller porosity. However, it is clear as increasing mPDMS/mHexane for
values higher than 8:2 leads to a decrease of the absorption capacity.
We hypothesized that if the amount of hexane increases over a
certain amount, the cross-linking degree of PDMS sponges decreases
dramatically, consequently the skeleton could not support its own
weight and collapses24. This causes a decrease in the porosity of the
sponges and consequently in the absorption capacity. As a further
proof, we observed that for mPDMS/mHexane ratio lower than 4:6 the
sponge was completely collapsed sticky and not suitable for oil
absorption.
Figure 2 a) Dichloromethane mass absorption (g g-1) (columns) and porosity (dots) of the
PDMS sponges with different mPDMS/mHexane ratios. b) Swelling process of PDMS sponge
before (top) and after (bottom) immersion in oil.
The impact of the solvent used in PDMS dilution during PDMS sponge
formation was evaluated by preparing different sponges with
different solvents. We tested hexane, toluene and dichloromethane;
the dilution ratio was 2:8 solvent /PDMS prepolymer in presence of
50% of water with respect to prepolymer and the uptake of
dichloromethane was evaluated. The solvent used to dilute the
prepolymer has a strong effect on the oil uptake process (Figure 3)
and lower is the polarity of the solvent, higher is dichloromethane
absorbency. Arguably, the higher the polarity of the solvent, the
greater is its ability to form hydrogen bonds with water. This could
cause a decrease in the porosity of the sponges as already reported
for systems based on polymerization starting from an emulsion31.
of the dissolved silicone. At this temperature PDMS prepolymer
quickly form cross-linked bonding between PDMS prepolymer
chains, giving a semi-rigid gel that surrounds emulsion droplets in
few minutes. As a consequence, closed-pores entrapping soft
template are formed. During evaporation that naturally occur at that
temperature, the soft template increase its volume and physically
enlarge the closed-pore formed by not completely polymerized
PDMS. When the pressure due to evaporation of soft template inside
the formed closed pores becomes high enough, the interconnection
between PDMS prepolymer chains could be physically broken
causing the explosion of the closed-pores leaving large open cavities
inside the polymeric matrices with an average dimension of 406±302
µm, a minimum pore dimension of 65.8 µm and a maximum of 1.768
mm (Figure 1b-c and figure S1).
Figure 1 (a) Schematic illustration of the preparation of the PDMS sponge. (b)
photograph of the freshly prepared PDMS sponge. (c) SEM image of a sponge portion
(scale bar=500µm)
Therefore, all the prepolymer was converted in a porous structure
with interconnected pores in few minutes (20 min) independently
from the dimension of the sponge (Figure 1b).
At the end of the process both diluting and template solvent are
evaporated, leaving porous PDMS structure ready to use. The simple
preparation method here adopted, makes sponges fabrication
suitable for large-scale production without the need of complex,
expensive and cumbersome
instrumentation. Moreover, the
preparation is faster (few minutes) thanother reported methods
used for porous PDMS fabrication for which many hours or days are
required to produce large amount of the material.
Performance of PDMS sponge in oil absorbency
For an ideal oil absorbent, a material highly porous and with 3D
interconnected pores is necessary. It is well known that porous PDMS
has the ability to take up oil13,23 -- 26.
To select the optimal conditions, determining the most satisfactory
oil uptake properties, different solvents and amount for both
prepolymer solubilization and acting as soft template have been used
for the preparation of PDMS sponges.
Dichloromethane (DCM) absorption has been used to evaluate oil
uptake properties of different prepared sponges. Figure 2 shows
porosity and dichloromethane absorbency of the sponges prepared
using water as soft template at 50% in weight with respect to PDMS
prepolymer and hexane in different ratio. Once dipped in contact
with organic solvent all the prepared sponges increased their volume
during the absorption process, indicating the occurrence of a
swelling process (Figure 2b). As reported, an oil mass absorption
higher than 21 g g-1 with a swell ratio of 3.2 v/v0 for dichloromethane
was obtained for the PDMS sponges prepared with a ratio of 8:2
mPDMS/mHexane. This sponge is characterized by a porosity of about
Figure 3 Variation of mass absorption (g g-1) of the PDMS sponges for dichloromethane
with different solvent used to dilute the PDMS prepolymer.
In hard template synthesis of PDMS sponges was already
demonstrated as different template could cause different porosity13.
In the present work, the template namely soft-template
is
represented by a solvent immiscible with prepolymer diluted in
opportune solvent. Sponges with different soft template at 50% in
weight with respect PDMS prepolymer have been prepared to
evaluate the impact of them on dichloromethane absorption. The
mPDMS/mHexane was kept at a ratio of 8:2. Figure 4 shows as the soft-
template has a significant effect on the oil uptake process. We
observed that oil absorption increases increasing the boiling point of
soft-template. We hypothesized that this could be due since
polymerization occurs at high temperature, then part of the soft
template could evaporate before the formation of prepolymer cross-
linked bonding. Consequently, smaller emulsion droplet will be
present in the mixture causing the formation of less porous sponges.
Figure 5 Dichloromethane mass absorption (g g-1) (columns) and porosity (dots) of the
PDMS sponges prepared with different amount in wt with respect PDMS prepolymer.
In figure 6 normalized dichloromethane absorption of the sponges
with the higher dichloromethane absorbency is plotted as a function
of time. The maximum absorbency is observed in less than 30
seconds. The absorption rate is comparable with other PDMS based
materials24 and higher with respect to other gel oil absorbents, which
reached the equilibrium in 2 hours or even longer32 -- 34.
Moreover, different sponges produced in different times exhibited
similar dichloromethane uptake suggesting that the new synthetic
route produces material with reproducible oil uptake properties
(RSD=10% n=3).
Figure 4 Variation of mass absorption (g g-1) of the PDMS sponges prepared from
different soft-template.
Similarly, a decrease in oil absorbency is observed if less of 50% soft
template with respect PDMS prepolymer was used (figure 5).
However, also increasing soft template amount to values higher than
50% wt compared to prepolymer
in
dichloromethane absorbency and porosity. We supposed that higher
is the amount of template solvent larger is the distance between the
forming polymeric chains causing a decrease of the crosslinking
degree. Consequently, the skeleton collapses on
its weight
decreasing the porosity.
lead to a decrease
Figure 6 Oil mass absorption for different contact times of PDMS sponge.
the as-obtained PDMS sponges have
Importantly
intrinsic
hydrophobicity and oleophilicity, highlighted by water contact angle
(CA) of 145.5±1° (Figure 7a). Thanks to lightweight, porous structure
and hydrophobicity properties, PDMS sponge float on water surface
and when immersed in water with the help of an external force, an
air cushion around the sponge that maintain the sponge dryness is
observed (Figure 7b). This is evident in Movie S1 in which paper
remained dried after that a sponge previously submerged in water
was rest on its surface. Moreover, the weight of the sponge remains
constant before and after immersion in water. The hydrophobicity of
the PDMS sponge is maintained also towards corrosive aqueous
liquid including 1 M HCl and 2 M NaOH with a water CA of ~144.7°
and ~146.4°. The combined hydrophobicity and oleophilicity of the
sponge are commonly attributed to the low surface free energy of
the PDMS material and the porous structure. Normally bulk PDMS
showed excellent hydrophobicity with a water contact angle of
105°35. It is well known that porous morphology can increase the
water contact angle of hydrophobic surface due to air entrapment,
as described by the Cassie-Baxter wetting model36.
oil under water if driven by an external force. It is interesting to note
as the weight of the sponges after oil uptake is equal to the weight
of the sponge before absorption plus the weight of ~99% of the oil
present in water. Moreover, some air bubbles come out from the
sponges during submerged oil absorption, confirming the absence of
water inside the absorbents after immersion in water. After oil
absorption, the sponge float over water surface and can be removed
without leakage of oil (Figure 9b and movie S3). This aspect is
important in real application. More importantly, the oil stored in the
pores can be easily removed by simple squeezing as shown in figure
9c or movie S4.
Figure 9 Removal of a) oil red O colored hexane from the water surface and b) oil red O
colored chloroform with PDMS sponges. C) recovery of absorbed oil red O colored
chloroform from PDMS sponge by squeezing (the transparent solvent is ethanol)
The PDMS oil mass absorption capacity was tested with different oils
and organic solvents. As observable in figure 10 the oil mass
absorption was in the range of 3.9 to 32.3 g g-1 depending on
viscosity, density and surface tension of the organics.
Figure 7 a) Digital image of a drop of water deposited on PDMS. b) PDMS sponge during
immersion in water.
Mechanical properties of sorbent materials are important for
practical application since in materials with lower mechanical
strength the viable stack height of the sorbent after absorption is
only a few centimeters.
PDMS is well known for its excellent compression properties in both
porous and bulk form. Figure 8a reports the stress-strain curve under
a loading-unloading compression cycle for the sponge with the
higher dichloromethane uptake. The modulus increases slowly until
a strain of about 50% a typical performance of soft foam.
Nevertheless, values higher than 300 kPa at 60% strain for the
sponge are recorded, much higher with respect to most of other
reported oil-uptake systems making the material suitable for oil
removal13. Recyclability of porous materials for water/oil separation
is a key point to dramatically cut the costs of production. In figure 8b
a PDMS sponge was pressed until 90% of its original volume at 10
mm/min to mimic the squeezing process necessary to remove
entrapped oil in real application and normalized absorption capacity
after immersion in dichloromethane was recorded. The results show
that absorption capacity did not significantly deteriorate until 200
cycles and more than 90% of its absorption capacity remained after
300 runs. The decrease in absorption capacity of PDMS sponges
could be ascribed to the small weight changes as deducible from the
small decrease of stress value after successive compression cycles at
90% strain necessary to remove absorbed oil (see figure S2).
Importantly the 3D porous materials keep their hydrophobicity
(CA=145.1 ±1°) after 300 usage cycles evidencing as dichloromethane
is not adsorbed on pore surface.
Figure 8 a) Compressive stress-strain curve at 60% strain of PDMS. b) Demonstration of
the recyclability of the sponge for dichloromethane absorption.
Selective absorption of oils from water
With hydrophobic/hydrophilic properties, interconnected porous
structure and mechanical stability the PDMS sponges are good
candidate as an oil absorbent for water/oil separation. When floating
on the surface of an oil water/mixtures, the sponge absorbed in a
short time the oil and all water was left (Figure 9a and movie S2)
allowing the storage of the collected oil inside the 3D porous
structure. Moreover, the PDMS sponge is also able to adsorb heavy
It is well known that PDMS based porous materials have a higher
volume absorption capacity compared to the other porous oil
Figure 10 Different oil absorption for PDMS sponge.
Table 1 Comparison of various oil absorbents
Oil absorbent
Swellable
porous
prepared with
soft template
method
Swellable
porous PDMS
PDMS sponge
120-130
PDMS sponge
138.9
PDMS/MWNTs
Bacterial
Cellulose
aereogel
Melamine
sponge/rGO
Nanofibrillated
cellulose
Paper waste
rGo/PVDF
153.4
146.5
132
140
-
-
Graphene/EDA
155
MTMS --
DMDMS gels
3D graphene
framework
Silanized
melamine
sponge
152.6
-
151
>5
>8
~40
>20
Different
days
>24
15
>18
24
>24
>15
>1.5
Water
Contact
Angle
(°)
Estimated
time of
preparation
[h]
Chlorophorm
Mabs
(g g-1)
Chlorophorm
Vabs
(cm3 cm-3)
Stress at
60% strain
(kPa)
Reference
>300
This work
145
~0.6
144
>12
32.3
21.5
(Dichloromethane)
(Dichloromethane)
4.33
3.23
34
11
4.14
1.34
12
(Dichloromethane)
1.8
(Dichloromethane)
20.5
185
165
102
150
20
180
(DCM)
14
470
163
4.24
0.84
1.25
0.75
0.58
0.028
0.84
(DCM)
2.54
0.66
1.94
5
12
-
330
~20
-
-
-
-
6
(50%)
10
4
-
24
23
26
13
37
38
39
40
41
42
43
44
45
absorbents such as (polyurethane, carbon soot, aereogel…)13, this is
possible due to the swelling of PDMS after immersion in oil, which
significantly increases the available volume for oil storage.
On the other hand, PDMS porous material evidenced a lower mass-
based absorption capacity with respect other porous oil absorbents
due to the higher density of the materials. Consequently, PDMS
porous material with higher mass absorption capacity and volume
absorption capacity
is on demand for practical application.
Moreover, as evidenced before, high mechanical strength is on
demand for practical application since the viable stack height of the
sorbent after absorption is only a few of centimeters if this value is
low. In table 1 the here prepared PDMS sponges are compared with
other reported sorbents based on PDMS or other materials. Is
evident as at 60% strain the material evidences one of the higher
mechanical strength ever reported. As clearly visible the preparation
time is considerably shorter with respect all the other sorbents. This
is very important in case of emergency in which timely intervention
is required. Due to the lower density of the material and large pores
chloroform and dichloromethane mass absorption evidenced one of
the higher value for PDMS based materials. Since mass-based
absorption capacity is strongly affected by the density of absorbing
materials, volume absorption capacity was also take in account to
characterize the absorptive capability of the sponges, as is not a
function of the solvent and absorbent density and better describe
the absorption capacity of the material. Interestingly, to the best of
our knowledge the best volume absorption capacity for oil
absorption has been obtained in the present work making the system
valuable for real applications. As described before, this could be due
to increased porosity and the presence of larger pores with respect
other PDMS based materials. However, larger pores can favor water
penetration inside polymeric matrices. To evaluate the ability of
hydrophobic PDMS to retain water we calculated the breakthrough
pressure PB from PB=ρghmax, where ρ is density of water, g is
gravitational acceleration and hmax is maximum height of the water
column that the PDMS sponge can support. Experimental results
evidenced a PB=1170Pa. Experimentally measured breakthrough
pressures of porous PDMS is compared to theoretical PB (PBT) of
hydrophobic membrane with cylindrical pores using Laplace-Young
equation:
𝑃𝑃𝐵𝐵𝐵𝐵=2γcos (𝜃𝜃𝑤𝑤)
d
Where θw is water CA of the porous PDMS surface, γ= 0.0728 N m-1
is the water surface tension of water air interface and d is the
average pore diameters. The experimental PB is not in good
agreement with theoretical value (PBT=583 Pa). The difference can be
attributed to the large variation in the pore dimension inside
polymeric matrices and the presence of an elevated number of pores
smaller than average pore dimension (<300µm) (figure S1)46.
Nevertheless, the experimental PB is comparable with PBT that can be
calculated for other PDMS porous material for water oil separation
with pores more homogenously distributed for which values
between 731 Pa and 1150 Pa can be calculated25,26. Moreover,
highest water contact angle for sponges fabricated with only PDMS
was observed, probably due to the absence of organic residual
materials on the pores surface that can remain if hard template
technique is used. This confirm as the here innovative synthetic
procedure can produce materials with improved properties for water
oil separation.
Conclusions
In conclusion, a new route to fabricate 3D interconnected porous
PDMS sponge has been proposed. The proposed fabrication
technique is simpler, easier to be scaled up and dramatically faster
than other reported porous absorbents. The obtained pores have a
dimension range from tens of micrometres to millimeter. Moreover,
different sponges prepared in different times evidenced replicable
behaviour
in dichloromethane absorbency suggesting as the
synthetic route address to the fabrication of sponges with the same
porosity. Owing to their hydrophobicity and superoleophilicity, the
obtained PDMS sponge can selectively collect oils and organic
solvents from water few seconds. The sponges are able to keep
collected oil inside polymeric structure until a compression is applied
and the porous PDMS is readily utilizable for a new cycle of oil
collection. The here prepared sponges exhibit improved mechanical
properties with respect to other PDMS absorbents. This permit to
reuse the material hundreds of times without loss of function. The
volume absorption capacity is higher than other porous materials
reported for water oil separation and mass absorption capacity is
comparable with the better values recorded on PDMS oil absorbents.
Probably, as previously observed23, the heterogeneity in pore
dimension are crucial to obtain materials with high porosity and
consequently higher sorption capacity and to prevent water
penetration. The achieved volume and mass absorption capacity, the
improved hydrophobicity and density are fully appropriate for
practical applications allowing easy transport and storage.
As an example, for the absorption of 1 ton of petroleum (density ~
0.88 g cm-3), only ~ 56 kg of the materials are estimated to be
required, that correspond to a sponge volume of only 0.28 m3
(approximately equal to a volume occupied by ~ 3.6 persons).
Improving the already good results and decreasing the costs with
respect to more complicate systems previously reported based on
PDMS and carbon nanotubes13.
Moreover, we believe that the simple and dramatically faster
preparation strategy can be successful in case of emergency
permitting in situ fabrication and can offer inspiration for researchers
to prepare other 3D interconnected porous materials.
Acknowledgements
The support from Cohesion fund 2007-2013 - APQ Ricerca Regione
Puglia "Programma regionale a sostegno della specializzazione
intelligente e della sostenibilità sociale ed ambientale
-
FutureInResearch" under Grant no. 9EC1495 (Ultrasensitive sensor
for food analysis) and Fondazione CARIPUGLIA, project: "Materiali
innovativi porosi nanocompositi per la rimozione e il recupero di
composti
fenolici da acque di vegetazione olearie" are
acknowledged. We thanks Dr. Marco Perrone for his technical help
in absorption measurments.
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|
1910.05325 | 1 | 1910 | 2019-10-11T17:42:34 | Low-Damping Ferromagnetic Resonance in Electron-Beam Patterned, High-$Q$ Vanadium Tetracyanoethylene Magnon Cavities | [
"physics.app-ph",
"cond-mat.mes-hall"
] | Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss ($\alpha = 3.98 \pm 0.22 \times 10^{-5}$), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene ($\mathrm{V[TCNE]}_x$) is a promising new material for these applications that is potentially compatible with semiconductor processing. Here we present the deposition, patterning, and characterization of $\mathrm{V[TCNE]}_x$ thin films with lateral dimensions ranging from 1 micron to several millimeters. We employ electron-beam lithography and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic acid) copolymer bilayer (PMMA/P(MMA-MAA)) on sapphire and silicon. This process can be trivially extended to other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to 25 microns with only a factor of 2 increase down to 5 microns. A rich structure of thickness and radially confined spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provides an exchange stiffness, $A_{ex} = 2.2 \pm 0.5 \times 10^{-10}$ erg/cm, as well as insights into the mode character and surface spin pinning. Below a micron, the deposition is non-conformal, which leads to interesting and potentially useful changes in morphology. This work establishes the versatility of $\mathrm{V[TCNE]}_x$ for applications requiring highly coherent magnetic excitations ranging from microwave communication to quantum information. | physics.app-ph | physics | Low-Damping Ferromagnetic Resonance in Electron-Beam Patterned,
High-Q Vanadium Tetracyanoethylene Magnon Cavities
Andrew Franson,1 Na Zhu,2 Seth Kurfman,1 Michael Chilcote,1 Denis R. Candido,3, 4 Kristen S. Buchanan,5
Michael E. Flatté,3, 4 Hong X. Tang,2 and Ezekiel Johnston-Halperin1
1)Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
2)Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511,
USA
3)Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242,
USA
4)Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637,
USA
5)Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA
(Dated: 14 October 2019)
Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to
the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabri-
cation techniques. The low-loss (α = (3.98± 0.22)× 10−5), room-temperature ferrimagnetic coordination compound
vanadium tetracyanoethylene (V[TCNE]x) is a promising new material for these applications that is potentially com-
patible with semiconductor processing. Here we present the deposition, patterning, and characterization of V[TCNE]x
thin films with lateral dimensions ranging from 1 micron to several millimeters. We employ electron-beam lithog-
raphy and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic
acid) copolymer bilayer (PMMA/P(MMA-MAA)) on sapphire and silicon. This process can be trivially extended to
other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to
25 microns with only a factor of 2 increase down to 5 microns. A rich structure of thickness and radially confined
spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provides
an exchange stiffness, Aex = (2.2± 0.5)× 10−10 erg/cm, as well as insights into the mode character and surface spin
pinning. Below a micron, the deposition is non-conformal, which leads to interesting and potentially useful changes
in morphology. This work establishes the versatility of V[TCNE]x for applications requiring highly coherent magnetic
excitations ranging from microwave communication to quantum information.
Interest in low-loss magnetic thin films has been grow-
ing due to potential applications in magnonics and quan-
tum information as well as the potential for compact, high-
efficiency magnetoelectric devices.1 -- 3 In the field of magnon-
ics and spintronics, yttrium iron garnet (Y3Fe5O12, YIG),
an electrically insulating ferrite that exhibits extremely low
Gilbert damping, α ≈ 6× 10−5 and a linewidth of 3.4 G
at 9.6 GHz for pristine nanometer-thick films, is currently
the leading material for magnetoelectronic circuits.4,5 The
low-damping present in YIG films has led to its incorpora-
tion in magnetoelectric circuits and it also plays a promi-
nent role in the study of magnonics research.2,6 -- 9 Pattern-
ing of YIG, however, presents a challenge. When patterned,
the damping increases to α ≈ 4× 10−4 to 8.74× 10−4 for
ion-milled films,10,11 and α ≈ 2.9× 10−4 to 5× 10−4 for
liftoff-based films.12 -- 14 Furthermore, post-growth annealing
steps at temperatures as high as 850 ◦C are generally re-
quired to attain even these degraded damping values, and the
lowest damping values are only achieved for films deposited
on the lattice-matching substrate gadolinium gallium garnet
(Gd3Ga5O12, GGG), both of which provide strict limits on di-
rect integration with functional devices.15 -- 17 Vanadium tetra-
cyanoethylene (V[TCNE]x, x ≈ 2), on the other hand, is a low-
loss (sub-Gauss linewidth at 9.83 GHz), room-temperature
(Tc = 600 K) ferrimagnet that can be deposited optimally at
50 ◦C and 30 mmHg without the need for lattice matching.18,19
These relatively benign deposition conditions allow for depo-
sition on a wide variety of substrates and pre-patterned cir-
cuits, positioning V[TCNE]x as an exciting option for on-chip
magnetic and magnonic device incorporation.20 -- 22 However,
realizing this promise has been limited by the lack of tech-
niques for patterning V[TCNE]x films at micron to sub-micron
length scales.
Here we present a method for depositing and patterning
V[TCNE]x using standard electron-beam lithography tech-
niques with additional steps to preserve its high Tc and low-
loss characteristics. The primary hurdles to micron-scale pat-
tering of V[TCNE]x are its sensitivity to oxygen and solvents
traditionally used in fabrication. Our past work has addressed
air-sensitivity via encapsulation in a commercial organic light-
emitting diode (OLED) epoxy, increasing its lifetime in air
from hours to months,23 and there are other commercial op-
tions, such as potting,24 that promise to protect films indefi-
nitely. This leaves solvent sensitivity, which inhibits the use
of traditional patterning techniques for two reasons:
i) the
presence of solvent in the resist layer inhibits the deposition
of V[TCNE]x as the solvent outgasses during growth, and ii)
liftoff requires a solvent soak that will in general destroy or
degrade the CVD-grown V[TCNE]x film. Here we address
both of these challenges by using a thin AlOx encapsulating
layer for the resist and identifying a V[TCNE]x-compatible
solvent, respectively, demonstrating micron-scale patterning
of V[TCNE]x films with no apparent increase in microwave
loss. The patterned structures are characterized by scanning
arXiv:1910.05325v1 [physics.app-ph] 11 Oct 2019
electron microscopy (SEM) and by a combination of ferro-
magnetic resonance (FMR) and comparison with micromag-
netic simulations and analytic calculations.
The CVD thin-film growth process typically results in
a smooth blue-black V[TCNE]x film uniformly distributed
across the substrate surface. When a resist is applied to the
substrate before growth, however, V[TCNE]x deposition re-
sults in non-uniform coverage and poor V[TCNE]x quality.
This is attributed to chemical reactions between the released
solvents and the precursors (tetracyanoethylene and vana-
dium hexacarbonyl). Solvents present in common resists in-
cluding LOR, MICROPOSIT S1800 series, and poly(methyl
methacrylate) result in macroscopically inconsistent deposi-
tion of V[TCNE]x across the resist's surface as well as inside
patterned areas. In order to address this solvent sensitivity, a
3 nm layer of aluminum is thermally deposited after develop-
ment to encapsulate the resist layer. The aluminum is then ox-
idized with a ten-minute ultraviolet ozone clean in a UVOCS
T10x10/OES prior to V[TCNE]x deposition.
In prior V[TCNE]x precipitation synthesis studies,25 -- 27 sev-
eral solvents have been shown to precipitate V[TCNE]x with
a modest impact on the Tc of the resulting powder. Since
dichloromethane has a small impact on V[TCNE]x quality
and readily dissolves poly(methyl methacrylate) (PMMA) and
poly(methyl methacrylate-methacrylic acid 8.5%) (P(MMA
8.5 MAA)) at room temperature, this is the resist-solvent
pair chosen to address the challenge of solvent based liftoff.
Specifically, this work focuses on 495PMMA A6 on MMA
(8.5) MAA EL 11 as a resist bilayer (PMMA/P(MMA 8.5
MAA)) to additively pattern low-loss V[TCNE]x onto sap-
phire, with the understanding that this patterning process
should trivially extend to other inorganic substrates.28,29
Figure 1(a) shows the FMR response at 9.83 GHz of a
V[TCNE]x thin film before and after a 2.5-hour soak in
dichloromethane in a nitrogen atmosphere (< 10 ppm 02,
< 2 ppm H2O). The linewidth and lineshape of the resonance
are largely unchanged, indicating that there is little to no in-
corporation of dichloromethane into the CVD-grown film on
that timescale. The linewidth narrows slightly, possibly due
to changes in the ordering of the V[TCNE]x due to solvent
annealing.30 The V[TCNE]x growth morphology that results
from the above process is characterized by SEM and is shown
in Fig. 1(b-c). Unlike physical vapor deposition, CVD depo-
sition is driven by a combination of flow and diffusion. Fig-
ure 1(b) shows how the V[TCNE]x deposition is limited by
the flow characteristics through the patterned features. In par-
ticular, V[TCNE]x does not form vertical sidewalls but rather
forms gently sloped sidewalls at an angle of about 6◦ over
a distance of approximately a micron from the edge. This
leads to a parabolic profile, as one would expect from the ve-
locity profile resulting from laminar flow through a channel,
Fig. 1(c). These results suggest that there are likely opportuni-
ties to tune the structure profile by controlling channel width,
flow direction, resist height, and resist morphology. This
cross-sectional profile is difficult to achieve with other ma-
terial systems and deposition techniques,31 and it may prove
beneficial for studies of spin-wave confinement as it offers a
means to realize an approximation of an adiabatic boundary.
2
(a) V[TCNE]x thin film FMR at 9.83 GHz and resonant
FIG. 1.
field of 3565 Oe before and after a 2.5-hour soak in dichloromethane
(CH2Cl2). SEM images of patterned V[TCNE]x film morphology be-
fore (b) and after (c) liftoff with dichloromethane reveal a parabolic
deposition morphology into a 2 µm wide channel. The parabolic
cross-section is highlighted with a dashed red line in (c).
Flow-limited deposition can,
in principle, also lead to
anisotropy in patterned features based on alignment between
the flow direction and internal structure. Figure 2 shows vari-
ous patterned structures of V[TCNE]x that are designed to ex-
plore these effects. The images show that there is anisotropic
growth for several of the structures. The deposition time for
these samples is 1.0 hr, leading to a nominal thickness of 300
nm. All shapes in Fig. 2 have a faint outline that reveals the
ballistically deposited AlOx layer. In Figs. 2(g, j), a dashed
black semi-circle has been superimposed over the AlOx out-
line to make it easier to compare the AlOx and V[TCNE]x mor-
phology. The outline shows that there is little to no offset or
ellipticity present in the patterned 10 µm diameter V[TCNE]x
disk. Figure 2(h), however, shows significant anisotropy as
measured by the differences between the faint AlOx outline
and the V[TCNE]x pattern. The flow direction across the
shape is left to right with a 20◦ tilt towards the top. The flow
direction manifests in a more complete, laminar profile along
the top and bottom whereas eddies inhibit deposition in the
left and right interior edges. Laminar flow over a step predicts
an eddy approximately as wide as the step is tall.32,33 This is
consistent with the fact that the 540 nm thick PMMA/P(MMA
8.5 MAA)) bilayer results in a roughly 500 nm wide region of
reduced flow which leads to a taper in the morphology. This
effect is also seen in Figs. 2(c, f) where the concave features
at the corners see a reduction in deposition roughly 800 nm
3
flow structure from boundary-driven flow into a cavity with
a depth-to-width ratio of one-third, suggesting that flow over
the features is laminar and the resulting deposition shape and
cross-section can be simulated from flow.32,33 It may be pos-
sible to achieve smaller features by using thinner resist layers,
or by choosing pattern geometries that intentionally channel
the flow, but these approaches will be pattern specific and are
beyond the scope of this work.
To explore the utility of this patterning technique for
magnonic and magnetoelectric devices, the magnetization dy-
namics of these microstructures are studied using FMR. Mea-
surements are performed at room temperature in a Bruker
EPR spectrometer with the microwave frequency held near
9.83 GHz while the applied magnetic field is swept across
the V[TCNE]x resonance. Scans are then repeated for mul-
tiple polar angles, θ, from out-of-plane (θ = 0◦, OOP) to in-
plane (θ = 90◦, IP) and for multiple azimuthal angles, ϕ, from
parallel to the x-axis (ϕ = 0◦) to perpendicular to the x-axis
(ϕ = 90◦).
Figure 3 shows the results of FMR characterization of 1 µm
wide bars aligned parallel to the x-axis and 5 µm diameter
disks. The bars are spaced 20 µm center to center in a 1D
array and the disks are spaced 40 µm center to center in a 2D,
square array. The position of the uniform mode of the bars
(red) and disks (blue) is tracked as a function of orientation in
Figs. 3(b, c). The bars show a single-peaked resonance that
varies from 3550 to 3630 Oe as the structures are rotated IP
to OOP. The disks reveal a more complicated peak structure,
that suggests standing spin-wave modes are present, Fig. 3(i),
and exhibit a larger field difference between IP and OOP res-
onances. This difference is evident in Fig. 3(d) where the res-
onances are tracked through multiple high-symmetry direc-
tions, revealing the full anisotropy of these structures.
The formalism developed by Smit, Beljers, and Suhl34 -- 36
is used to model this anisotropy. A Cartesian coordinate sys-
tem is defined with x parallel to the length, y parallel to the
width, and z parallel to the thickness of the bars as shown in
Fig. 3(a). By explicitly considering the Zeeman and magne-
tostatic contributions to the free energy, F, one derives the
expression,37,38
(1)
MiNi jMj,
1 2
F = −MiHi +
where Hi are the components of the applied magnetic field,
Mi are the components of the magnetization, and Ni j are com-
ponents of the demagnetizing tensor, which leads to shape
anisotropy, with i, j,k defined with respect to pattern axes.
Solving for harmonic solutions with respect to time and min-
imizing F with respect to θ and ϕ yields
,
(2)
(3a)
= {[H − 4πMsNOP cos(2θ )]
× [H − 4πMsNOP cos2(θ )− 4πMsNIP cos(2ϕ)]
IP cos2(θ )cos2(ϕ)sin2(ϕ)(cid:9)1/2
−16π2M2
s N2
ωγ
where
NOP ≡ Nz − Nx cos2(ϕ)− Ny sin2(ϕ),
FIG. 2. Top view SEM images of various V[TCNE]x patterns after a
1.0 hr growth, about 300 nm thick. (a-f) Deposition morphology of
several shapes with various features ranging from concave to convex
to antidot. (g-h) Enhanced views of (e) and (b), respectively, show
that flow-induced anisotropy is present in the complex Block O shape
(h).
(i-j) For features of order 1 micron or smaller, the restricted
flow begins to affect the pattern deposition. The black, dashed semi-
circles in (g) and (j) highlight the AlOx profile that is present for all
shapes.
away from the planned shape shown by each AlOx peak.
Figures 2(i, j) further explore the impacts of length scale on
gas flow and growth morphology using bars and disks. The
1 µm wide bar in Fig. 2(i) acts as a channel for gas flow, yield-
ing a parabolic deposition profile similar to Fig. 1(b, c) across
the shape and good filling of the ballistic profile when the
thickness of the bar in Fig. 2(i) is about 200 nm thick.
In
contrast, the 1.77 µm diameter disk in Fig. 2(j) is visibly off-
center, with a 100 nm offset towards the top-left of the AlOx.
The deposition morphology in Fig. 2(j) resembles the eddy
4
tion is validated by the fact that 4πMs for V[TCNE]x is less
than 95 G, and the applied magnetic fields used for these mea-
surements are 3500 to 3750 Oe. As a result, ~M is parallel to
~
H to within 1.5 degrees for the experiments shown here.
The other potential source of anisotropy is the crystal field
which arises from the local coordination of the exchange inter-
action. For uniaxial crystal-field anisotropy, this crystal field
can be decomposed into components acting along the pattern
axes with the same angular dependence as the demagnetizing
anisotropy. As a result, the Ni that are extracted from the fit
to Eq. 2 are a combination of demagnetizing-field and crystal-
field components with the form
Ai ≡ Ni,extracted = Ni,demag +
where Ai
is the observed anisotropy tensor component,
Ni,demag is the geometric demagnetizing tensor component,
and Hi,crystal is the additional crystal field along that axis.
(4)
,
Hi,crystal
4πMs
x,demag = 0, Nbar
y,demag = 0.21, and Nbar
Three anisotropy tensors are used to determine the strength
of the crystal field in the bars and the disks. The first,
Ai, f it,
is generated from simultaneous fits to the three
red anisotropy curves in Fig. 3(d) from the bar array to
These fits yield 4πMs = 76.57± 1.67 G and
Eq. 2.
γ
2π = 2.742± 0.040 MHz/Oe, which agree with literature
values,19,20 and Ax, f it = 0.00± 0.01, Ay, f it =0.189± 0.019,
and Az, f it = 0.707± 0.026. The trace of this anisotropy tensor
is 0.896± 0.046, indicating the magnitude of the crystal-field
contribution is 7.96± 2.47 Oe. Using SEM measurements
to geometrically determine a pure demagnetizing tensor for
the bars, Nbar
i,demag, that does not include crystal-field effects
yields Nbar
z,demag = 0.79.39
Comparing the Ai, f it with these Nbar
i,demag, the z direction shows
the largest difference of 0.09, indicating this crystal field is
oriented along the z-axis of the bars. The magnitude of
this crystal field is consistent with previous measurements of
V[TCNE]x templated nanowires.22 In addition to being self-
consistent, these results also predict the anisotropy curves for
the disks (blue lines in Fig. 3(d)). To test these fitting results, a
final demagnetizing tensor, Ndisk
i,demag, for the disk are calculated
as Ndisk
z,demag = 0.944 based on
SEM measurements and demagnetizing expressions from the
literature.40 Combining this with the 4πMs and γ
2π values
from the previous fit results in the solid blue curves shown
in Fig. 3(d) with a combined reduced chi-squared value of
0.96. Adding crystal-field effects degrades the quality of the
reduced chi-squared value for Hdisk
z,crystal > 0.7 Oe, indicating
the absence of crystal-field effects in the disks. These results
suggest the crystal-field contribution arises from anisotropic
relaxation in the patterned bars, which corroborates prior work
with V[TCNE]x nanowires where an additional in-plane crys-
tal field is reported due to anisotropy in the relaxation of the
templated structures.22
y,demag = 0.028 and Ndisk
x,demag = Ndisk
The more complicated spectra of the disks suggests that
the disks are acting as spin-wave cavities with complex in-
ternal mode structure, Fig. 3(e). Numerical simulations and
analytical calculations are carried out to better understand
this mode structure. To begin characterizing the mode struc-
Ferromagnetic resonance characterization of patterned
FIG. 3.
V[TCNE]x bars and disks.
(a) Schematic of the measurement ge-
ometry for the array of 1 µm bars (red) and 5 µm disks (blue) of
(b-c) FMR response vs. applied field for θ = 0◦ to
V[TCNE]x.
θ = 180◦ with ϕ fixed along the x-axis. (d) Uniform mode peak posi-
tions (symbols) for three high-symmetry directions and correspond-
ing fit curves, Eq. 3. (e) Comparisons of experimental, analytic, and
simulated OOP FMR spectra. OOP disk linescan (top, blue) with
analytically calculated peak positions (top, black), thickness-mode
fitting (middle, red), and micromagnetic simulations (bottom, green)
with cross-sectional mode maps (bottom left, yellow and dark blue
represent positive and negative motion, respectively, at an instant of
time). Solid blue lines in middle panel indicate experimentally ob-
served odd-mode resonance fields and the symbols show the best fit
field values where the circled points (odd modes) were used for the
fits. Red dashed lines show predicted even-mode resonances.
NIP ≡ Nx − Ny,
(3b)
Nx,Ny,Nz are the diagonal components of the demagnetizing
tensor, θ is the polar angle, and ϕ is the azimuthal angle
that the sample magnetization makes with the pattern axes,
Fig. 3(a). Equation 2 is derived assuming the demagnetiz-
ing field is parallel to the magnetization, so Ni j = Ni jδi j = Ni,
and that the magnetization, (θM,ϕM), is parallel to the applied
field, (θH ,ϕH ), so only one set of angles is needed to describe
the magnetization and applied field, (θ ,ϕ). This approxima-
5
FIG. 4. Full-width at half-maximum linewidth vs resonant frequency
for various V[TCNE]x pattern sizes from thin films to 5 µm diame-
ter disks. All linewidths are extracted from the OOP geometry. All
growths were 1-hour long, resulting in a 300 nm thick film for the
5 µm film and 400 nm thickness for the rest. The patterned thin film
is a 2 mm by 2 mm patterned patch of V[TCNE]x.
modes that are excited simultaneously. The agreement be-
tween simulated and experimental spectra demonstrates con-
trol over the spin-wave mode structure and lays the foundation
for the study and application of magnon cavities with adia-
batic boundaries and engineered mode structures.
In addition to analyzing anisotropy and mode structure,
FMR can be used to determine the total magnetic loss, or
damping of these magnon modes. This damping potentially
contains both homogeneous and inhomogeneous sources as
parameterized via the Gilbert damping factor, α.46 The damp-
ing for the patterned V[TCNE]x films is measured via broad-
band ferromagnetic resonance (BFMR) performed in a cus-
tom built microstrip-based system wherein the applied mag-
netic field is held constant in the OOP geometry and the mi-
crowave frequency is swept across the V[TCNE]x resonance.
Figure 4 shows the linewidth vs frequency extracted for rep-
resentative samples of disks and unpatterned films, with ver-
tical lines indicated the error in the fits. Representative raw
data and fits can be found in the supplemental information.
The Gilbert damping is fit using Suhl's expression for the full-
width at half-maximum (FWHM) FMR linewidth,34
(5)
inhomogeneous
1
Fϕϕ(cid:19) ,
(cid:18)Fθθ +
γ M
dωres/dH
in combination with phenomenological
broadening.47 This results in
sin2(θ )
∆H =
α
∆H =
f + ∆H0,
(6)
4πα
γ
when one uses θ = 0 for the OOP geometry.46 In Eq. 6, ∆H
is the FWHM linewidth of the resonance, α is the Gilbert
damping, and ∆H0 is the FWHM contribution from inhomo-
geneous broadening. The fits yield α = (3.98± 0.22)× 10−5
for unpatterned films, α = (4.60± 0.44)× 10−5 for 25 µm fea-
tures, and α = (8.34± 0.77)× 10−5 for 5 µm disks. The thin-
film damping result of (3.98± 0.22)× 10−5 places V[TCNE]x
ture, the strongest experimental peaks are compared with the
odd analytic thickness modes predicted for a thin film in the
OOP geometry.41 The vertical blue lines in Fig. 3(e) repre-
sent the experimental peak values. Fitting to these peak val-
ues using the mode assignments indicated in Fig. 3(e) and
the parameters obtained from the FMR measurements yields
the red analytic curve and a value of the exchange stiff-
ness, Aex = (2.2± 0.5)× 10−10 erg/cm. The even thickness
modes, shown as dashed red lines, agree well with smaller
peaks within the experimental data. Analytic disk calculations
shown in black in Fig. 3(e) further describe the identity of
the quantum confined modes and agree well when using this
Aex. The exchange stiffness depends on Ms; an approximate
form, found by several means,42 -- 44 is Aex ∝ M2
s . The exchange
length constant λex = 2Aex
is therefore a better metric to use
µ0M2
s
to compare samples with different saturation magnetizations.
The difference between the exchange length from this study
of λex = 9.7 nm and the previously reported value of 21 nm20
could be due to differences in grain structure between the pat-
terned and unpatterned films44 as well as difficulty in mode
assignment, n, in prior work where fewer modes are visible.
Numeric modeling is performed using time-domain micro-
magnetic simulations with the open-source GPU-based soft-
ware MuMax3 while using the material parameters deter-
mined from the fits to the experimental data.45 The factors
that have the most relevant influence on the simulated peak
structure are (i) the sloped sidewalls that (a) have a strong ef-
fect on the shape of the lowest frequency set of peaks which
are comprised of a set of closely-spaced radially and lowest-
order thickness quantized modes and (b) apply an overall shift
to the thickness confined modes, (ii) the pinning conditions
of the surfaces that have a strong effect on the amplitudes
of the thickness-confined modes, and (iii) the exchange stiff-
ness, Aex, that controls the spacing between thickness quan-
tized modes. Sloped sidewalls are used in the simulations to
replicate the shape that occurs due to the slower growth rate
within 1 micron of the resist. The simulations show that the
position of the most prominent peak relative to the thickness-
confined modes is sensitive to the exact shape of the sidewalls
and the pinning conditions. To account for small differences
in the slope of simulated and experimental data, the higher-
order thickness modes are aligned with experiment instead
of the uniform mode in Fig. 3(e). Simulations with perfect
pinning at the top and bottom surfaces agree better with the
experimentally observed thickness and radial confined mode
structure as compared to simulations with top, bottom, or no
pinning; however, the close agreement between the calculated
even-mode resonance fields and several smaller peaks in the
experimental spectrum suggests that one of the surfaces likely
has slightly weaker pinning than the other. Additional simula-
tions can be found in the supplement. The resulting simulated
frequency response of the simulation is in green in Fig. 3(e)
along with several mode maps at peaks indicated by the green
arrows. These maps reveal quantization in the thickness and
radial directions in the tapered structure. The lower-order
thickness modes each show distinct radial quantization. The
n = 7 thickness mode, shows a nearly pure thickness quantiza-
tion and represents the sum of multiple closely-spaced radials
6
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films comfortably alongside YIG films as the lowest magnetic
damping material currently available, and the retention of
that ultra-low damping after patterning is considerably better
than the reported values for patterned YIG structures.10 -- 14 In
addition to low-damping, the high-frequency measurements
of the thin film and 25 µm disks have Quality (Q) factors,
f , of over 3,700, competitive with Q factors for YIG thin
films.48 Retaining ultra-low damping and high Q in patterned
V[TCNE]x for features as small as 25 µm and as large as mil-
limeters, both relevant length scales for many magnonic cavity
applications,3,14,49 -- 52 combined with the flexibility to deposit
on most inorganic substrates, positions V[TCNE]x to comple-
ment YIG in magnonic and magnetoelectric devices where in-
tegration of GGG or high-temperature annealing steps is lim-
iting, such as for small form factors and on-chip integration.
In summary, this work demonstrates a method for pat-
terning the ferrimagnetic coordination compound vanadium
tetracyanoethylene.
Standard electron-beam lithography
of PMMA/P(MMA-MAA) bilayers is used in conjunction
with pre-growth aluminum encapsulation and post-growth
dichloromethane liftoff to pattern V[TCNE]x thin films with
no degradation of the microwave magnetic properties. The
sidewalls of structures patterned in this way are sloped, al-
lowing for the investigation and quantitative modeling of spin-
wave confinement in magnetic structures with soft boundary
conditions. Patterned V[TCNE]x films with features down to
25 µm exhibit a high Q of over 3,700 and ultra-low damp-
ing of (4.60± 0.44)× 10−5 which are competitive with un-
patterned YIG and lower than all existing reports of patterned
YIG microstructures.10 -- 14 The versatility of the patterning and
deposition conditions of V[TCNE]x, in combination with its
ultra-low magnetic damping, position V[TCNE]x as a promis-
ing candidate for incorporation into magnetoelectric devices
where low-loss, highly coherent, magnon excitation are desir-
able. Such applications range from microwave communica-
tions to quantum information.
f∆
SUPPLEMENTARY MATERIALS
See supplementary material for the a detailed description
of sample fabrication, measurement techniques, simulations,
and analytic calculations.
ACKNOWLEDGMENTS
This work is supported by Emerging Frontiers in Research
and Innovation (EFRI) Grant No. EFMA-1741666. The au-
thors acknowledge the NanoSystems Laboratory at The Ohio
State University.
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Low-Damping Ferromagnetic Resonance in Electron-Beam Patterned, High-Q
Vanadium Tetracyanoethylene Magnon Cavities
Andrew Franson,1 Na Zhu,2 Seth Kurfman,1 Michael Chilcote,1 Denis R.
Candido,3, 4 Kristen S. Buchanan,5 Michael E. Flatté,3, 4 Hong X. Tang,2 and Ezekiel
Johnston-Halperin1
1)Department of Physics, The Ohio State University, Columbus, Ohio 43210,
USA
2)Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511,
USA
3)Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242,
USA
4)Pritzker School of Molecular Engineering, University of Chicago, Chicago,
Illinois 60637, USA
5)Department of Physics, Colorado State University, Fort Collins, Colorado 80523,
USA
arXiv:1910.05325v1 [physics.app-ph] 11 Oct 2019
1
PATTERNING AND MEASUREMENT METHODS
Patterning and Growth
V[TCNE]x bars and disks are patterned on commercially available C-plane polished sapphire
(Al2O3) via electron-beam lithographic techniques. The substrates are cleaned with a solvent
chain of acetone, methanol, isopropanol (IPA), and deionized water (DI water) followed by a 20
minute ultraviolet ozone clean (UVOC) in a UVOCS T10x10/OES to degrease and remove organic
contaminants. A 400 nm layer of MMA (8.5) MAA EL 11 (P(MMA-MAA)) is spun on at 2000
rpm for 45 seconds then soft baked at 180 ◦C for 300 seconds. A 140 nm layer of 495PMMA
A6 (PMMA) is then spun on at 2000 rpm for 45 seconds then soft baked at 180 ◦C for 60 sec-
onds. A 10 nm thick layer of aluminum is deposited via thermal deposition at 1× 10−6 Torr.
The electron-beam patterning of the PMMA/P(MMA-MAA) bilayer is performed on a FEI Helios
Nanolab 600 Dual Beam Focused Ion Beam/Scanning Electron Microscope with the assistance of
Nanometer Pattern Generation System (NPGS) software. Development of the written pattern is
achieved with Microposit MF-319 for 40 seconds, DI water for 20 seconds, MF-319 for 40 sec-
onds, DI water for 20 seconds, Microchem MIBK:IPA (1:3) for 60 seconds, IPA for 20 seconds,
DI water for 20 seconds. That is followed by a 120 second hard bake at 100 ◦C. A 3 nm thick layer
of aluminum is then deposited in the same system as the prior 10 nm layer to prevent outgassing
of the PMMA/P(MMA-MAA) bilayer during V[TCNE]x deposition. The sample is oxidized and
cleaned with a 10-minute UVOC. This oxidizes the surface of the 3 nm aluminum layer and re-
moves potential small sources of contamination from the growth surfaces. Growth of V[TCNE]x
is described in previous work.1 After transfer of the films from the growth glovebox to the liftoff
glovebox, liftoff is performed in dichloromethane. For the feature sizes and thicknesses used here,
liftoff occurred in a few minutes with gentle agitation from a Pasteur pipette.
Microwave Measurements
Angle-resolved ferromagnetic resonance (FMR) measurements are done with a Bruker electron
paramagnetic resonance spectrometer with an X-band bridge and 10 kOe electromagnet. Before
measurement, the V[TCNE]x samples are sealed into a quartz tube with a ceramic holder that aligns
the normal plane of the sample. Between each scan, the microwave frequency is tuned between
9 and 10 GHz to match the resonant frequency of the loaded cavity. The frequency is fixed and
2
measurements are then performed by sweeping the static field with 200 µW of applied microwave
power and a modulation field of 0.1 Oe. The quartz tube has a pointer fixed to it, allowing for
alignment within 0.5 degrees of the sample with respect to a custom made goniometer. The larger
error of ±2 degrees seen in Fig. 3(d) comes from the initial aligning the goniometer with the
in-plane (IP, θ = 90) orientation of the V[TCNE]x film. The IP orientation is taken to be the point
where the resonance field is at its minimum.
Frequency-resolved microwave measurements are done with a broadband ferromagnetic res-
onance (BFMR) setup with a B4003-8M-50 microstrip test board from Southwest Microwave
that is sourced by an Agilent N5222A vector network analyzer (VNA), transduced via a Krytar
203BK Schottky diode, and measured with an Ametek 7265 Dual Phase DSP lock-in amplifier.
The microstrip is positioned inside a 10 kOe electromagnet in the out-of-plane (OOP, θ = 0) field
geometry. Measurements are performed with an input power of -10 dBm and a modulation field
of roughly 0.1 Oe oscillating at 577 Hz.
3
NUMERICAL MODELING
Micromagnetic simulations are done to gain insight into the measured FMR spectra. The
micromagnetic simulations are done using MuMax32 with the following parameters for the
V[TCNE]x: saturation magnetization 4πMs = 76.57 G (6093 A/m), exchange constant Aex =
2.2× 10−10 erg/cm (2.2× 10−15 J/m), and a damping parameter of α = 0.0001, where α is
larger than the smallest measured damping value for V[TCNE]x and was chosen to ensure that the
simulations would converge in a reasonable amount of time. Cells of 40 x 40 x 4.6875 nm3 are
used. Selected simulations are repeated with smaller cells with similar results because the 40 nm
cell sizes are still small compared to the wavelengths of the spin-wave modes. Aex is determined
by fitting the mode spacing of the thickness confined modes from the OOP spectra of the disks
blue anisotropy curves in Fig. 3(c). Fitting is done to theory from Kalinikos et al.3 and is shown
in Fig. 3(e). Fitting for fully pinned and fully unpinned geometries yielded the same value for Aex.
The simulations are done with the static field, Hbias, applied OOP. The field magnitudes are
chosen to result in a resonance frequency near 9.83 GHz to be similar to the measurement fre-
quency used in the experiments. The structures are relaxed in the presence of Hbias and a small
additional field Hdynam of roughly 50 Oe, chosen such that the spins tilt by about 1% from the
static equilibrium position, is applied in the x-direction. The dynamics are monitored as a func-
tion of time after removing Hdynam and the simulated spectra are obtained by taking the Fourier
transforms of the x-component of the magnetization for each run. Mode profiles are calculated for
selected peaks in the spectra by running driven simulations at the selected resonance frequency
and extracting the spin distributions as a function of time for a full period after the simulation has
reached a steady state.
Since the pinning of the structures is unknown and the exact profile is uncertain, a matrix of
different combinations of pinning and cross-sectional profile is investigated. Three geometries
are considered based on the growth characteristics of the bar in Fig. 1(b, c), a cylindrical disk; a
lens-shaped, circular disk with a spherically-curved top surface and flat bottom surface (spherical
cap); and a disk with a 1 µm wide ramp from the outer rim to the inner rim, Fig. S1. For each
of these geometries, simulations with no pinning of surface spins, perfect pinning on the top
surface, perfect pinning on the bottom surface, and perfect pinning on both the top and bottom
surfaces is considered. To compare the experimental spectra with the simulations, we considered
the prevalence of the thickness modes and the shape of the strongest peak. The mode spacing does
4
FIG. S1. Left, experimental data of the 9.83 GHz OOP FMR scan of the array of 5 µm disks. Right, array of
the different simulated geometries considered in this study. Blue lines represent the full data and the orange
lines are the full data multiplied by 10 and truncated to better show low-intensity, low-field behavior. Mode
maps of the vertical cross-sections of the mode maps at the disk center for the largest amplitude peak for
each simulated geometry are shown in the upper left of each plot, where dark blue (dark), green (medium),
and yellow (light) represent negative, zero, and positive motion, respectively, at an instant of time. These
are quantized standing modes.
not change appreciably with the disk shape (taper vs. lens), and agrees well with the calculations of
the mode spacing for an unpatterned thin film. The spherical cap used for the lens-type simulations
leads to almost complete suppression of the thickness modes for all of the pinning conditions,
which is not consistent with the experimental spectrum. The strongest peak in the data is smoother
than the jagged combo-like structure of the main peak of the cylindrical simulations that occurs
due to the radial modes. The two simulations that are the closest to the experimental data are
the tapered-disk simulations with top/bottom and bottom-only pinning. The even modes show
up almost as strongly as the odd modes for bottom-only pinning, whereas only the odd modes
are present for top/bottom pinning. As show in Fig. 3(e), resonance peaks that correspond to
even thickness modes are present but weak compared to the odd modes, which suggests that both
surfaces are pinned but that pinning is imperfect on one of the two surfaces, likely the top.
5
FITTING METHODS
All fitting is performed in Python with the emcee package4 within the lmfit package.5
Cavity FMR Angular Anisotropy Fitting
Fitting of the red anisotropy curves in Fig. 3(d) are all performed with a modified Eq 2. Squar-
ing both sides and collecting factors of H yields
(cid:18)ω
γ(cid:19)2
16π2M2
solving for H then yields
= H2 + H × 4πMs(cid:0)−NIP cos(2θ )− NIP cos(θ )2 − NOP cos(2ϕ)(cid:1) +
s(cid:0)N2
IP cos(θ )2 + NIPNOP cos(2θ )cos(2ϕ)− N2
H = −b±√b2 − 4ac
2a
OP cos(θ )2 cos(ϕ)2 sin(ϕ)2(cid:1) ,
where
a ≡ 1,
b ≡ 4πMs(−NIP cos(2θ )− NIP cos(θ )2 − NOP cos(2ϕ)),
(S.1)
(S.2)
(S.3a)
(S.3b)
s(cid:0)N2
IP cos(θ )2 + NIPNOP cos(2θ )cos(2ϕ)−
c ≡ 16π2M2
N2
OP cos(θ )2 cos(ϕ)2 sin(ϕ)2(cid:1)−(cid:18)ω
γ(cid:19)2
.
(S.3c)
To account for deviations from high-symmetry directions, θ and ϕ are parameterized in terms of
a new parameter, t. This parameterization allows for fitting through a path along any great circle
of the unit sphere by using the expression
v1 = sin(θ1)cos(ϕ1) x + sin(θ1)sin(ϕ1) y + cos(θ1)z
~
v2 = sin(θ2)cos(ϕ2) x + sin(θ2)sin(ϕ2) y + cos(θ2)z
~
η = arccos(~v1 · ~v2)
sin(η(1−t))~v1 + sin(ηt)~v2
sin(η)
vm =
~
(S.4a)
(S.4b)
(S.4c)
(S.4d)
where ~vm points to a location on the great circle that intersects ~v1 and ~v2. The location is determined
by the parameter t which steps from ti = 0 to t f = π
to produce 10◦ steps
from 0◦ to 180◦.
η in steps of tstep =
t f−ti
18
6
This correction is only necessary for the bar sample scanned IP to OOP with the applied field
perpendicular to the bar axis (red diamonds in Fig. 3(d)). A path traveling from the IP posi-
tion (θ1 = 90◦, ϕ1 = 90◦) to a position 10◦ away from OOP (θ2 = 10◦, ϕ2 = 90◦) is required
to accurately describe the data. This corresponds to an initial θ offset in the x-direction while
sweeping θ in the y-direction and explains why the red-diamond curve does not kiss the red-circle
and red-square curves at exactly one point.
Broadband FMR Linewidth Fitting
FIG. S2. Representative single scans of various V[TCNE]x features ranging from an unpatterned thin film
to a 5 µm diameter disk array. All scans are done in the OOP (θ = 0) geometry. All growths were 1-hour
long, resulting in a 300 nm thick film for the 5 µm film and 400 nm thickness for the rest. The patterned
thin film is a 2 mm by 2 mm patterned patch of V[TCNE]x . The linewidth is extracted from the fit to the
furthest right lorentzian except for the 25 µm disks where the linewidth is extracted from the largest peak.
7
Figure S2 shows representative linescans from the BFMR measurement setup. The spectra are
fit well by a combination of several lorentzian derivatives. Each lorentzian derivative function has
antisymmetric (absorptive) and symmetric (dispersive) components6 represented by
aΓ3( f − f0)
,
L0abs( f ) =
(Γ2 + 4( f − f0)2)2 ,
L0disp( f ) = −dΓ2(cid:0)Γ2 − 4( f − f0)2(cid:1)
(Γ2 + 4( f − f0)2)2
so each derivative lorentzian in the fit is represented by
L0total( f ) =
aΓ3( f − f0)
(Γ2 + 4( f − f0)2)2 −
dΓ2(cid:0)Γ2 − 4( f − f0)2(cid:1)
(Γ2 + 4( f − f0)2)2
(S.5a)
(S.5b)
(S.6)
where a is the height of the derivative of the absorptive component, d is the height of the deriva-
tive of the dispersive component, Γ is the full-width at half-maximum of the lorentzian, f is the
independent variable, and f0 is the peak of the lorentzian.
8
ANALYTIC RESONANT FIELD CALCULATIONS
Here we find an analytical expression for the spin-wave (or magnetostatic mode) resonant fields
for a normally magnetized cylinder with thickness d and radius R. We first solve Maxwell's equa-
tions within the magnetostatic regime. Application of the proper boundary conditions at z = ± d
2,
the top and bottom surfaces of our cylinder, yields the following transcendental equations7,8
tan (kid) = 2
koki
k2
i − k2
o
,
iki√1 + κ
= ko,
(S.7)
(S.8)
i +k2
0)
H+Msλex(k2
where ko and ki are the in-plane and out-of-plane wave vectors, respectively, and κ = ΩH
H−Ω2 , with
ΩH =
γMs . An analytic expression for the resonant spin-wave
fields is then obtained from the Maxwell's equation coupled to the Laudau-Lifshitz equation, with
the additional assumption that the magnetization is pinned at r = R, which yields7,8
, λex = 2Aex
µ0M2
s
and Ω = ω
Ω2
Ms
Jm−1 (koR) = 0,
β n
m−1
→ kn
R
o,m−1 =
,
(S.9)
(S.10)
where β n
we obtain8 the following expression for the spin-wave resonant fields
m−1 is the nth-zero of the Bessel function of order m− 1. Now using Eq. S.8 and Eq. S.10
µoMs
k2
i,nmlR2
(β n
m−1)2(cid:19) −
2(cid:18)1 +
µo (Ms)2
k2
i,nmlR2
(β n
m−1)2(cid:19)2 ,
γ (cid:18)1 +
8 ω
(S.11)
γ (cid:29) Ms(cid:20)2(cid:18)1 +
assuming ω
. The indices n, m and l represent the radial, angular, and
thickness mode numbers, respectively. The resonant fields in Eq. S.11 are derived using the SI
electromagnetic equations and Bz
nml has units of Tesla (T). To obtain the resonant fields Hz
nml in
Oersted (Oe) unit, the values obtained from Eq. S.11 should be multiplied by 1× 104 Oe/T.
Eq. S.11 does not account for the demagnetization field. A good match with the experimen-
tal data is obtained using the approached described in Kakezei9 that considers an effective de-
magnetization per mode Nnml. To account for the effect of the demagnetization field, we sub-
stitute Ms → MsNnml with Nnml < 1. Fig. S3 shows the resonant fields found using Eq. S.11
for Nnml ∈ [0.865− 0.925]8 -- 10 for different d. The best match with the experimental data is for
9
m−1
R (cid:19)2#−
2Aex
Ms "k2
i,nml +(cid:18)β n
m−1)2(cid:19)(cid:21)−1
k2
i,nmlR2
(β n
+ µoMs −
ωγ
Bz
nml ≈ µo
d = 250 nm. This is smaller than the nominal thickness of the V[TCNE]x disks used in the ex-
periment (300 nm), which we attribute to the fact that the lens shape leads to a smaller effective
thickness. Like the simulations, the analytical calculations also predict a much closer spacing for
the radial modes as compared to the thickness-quantized modes (not shown).
FIG. S3. Plot of the resonant fields for the first five thickness modes l = 1,3,5,7 for the angular and
radial modes m = 1 and n = 1 a) d = 200nm, b) d = 250nm and c) d = 300nm. For all three plots,
A = 2.2× 10−10 erg/cm, Ms = 76.57 G, Nnml ∈ [0.865− 0.925], ω = 9.83 GHz, γ = 2.73× 106 MHz/Oe,
and R = 2500 nm. The black line shows the experimental spectrum obtained for the V[TCNE]x cylinder for
the OOP field orientation (θ = 0, ϕ = 0).
10
Applied Field, H (Oe)
Applied Field, H (Oe)
Applied Field, H (Oe)
d=200nm
d=250nm
d=300nm
Amplitude
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10S. V. Nedukh, S. I. Tarapov, D. P. Belozorov, A. A. Kharchenko, V. O. Golub, I. V. Kilimchuk,
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11
|
1712.01589 | 1 | 1712 | 2017-12-05T12:04:02 | Micro solid oxide fuel cells: a new generation of micro-power sources for portable applications | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | Portable electronic devices are already an indispensable part of our daily life; and their increasing number and demand for higher performance is becoming a challenge for the research community. In particular, a major concern is the way to efficiently power these energy-demanding devices, assuring long grid independency with high efficiency, sustainability and cheap production. In this context, technologies beyond Li-ion are receiving increasing attention, among which the development of micro solid oxide fuel cells ({\mu}SOFC) stands out. In particular, {\mu}SOFC provides a high energy density, high efficiency and opens the possibility to the use of different fuels, such as hydrocarbons. Yet, its high operating temperature has typically hindered its application as miniaturized portable device. Recent advances have however set a completely new range of lower operating temperatures, i.e. 350-450C, as compared to the typical >900C needed for classical bulk SOFC systems. In this work, a comprehensive review of the status of the technology is presented. The main achievements, as well as the most important challenges still pending are discussed, regarding (i.) the cell design and microfabrication, and (ii.) the integration of functional electrolyte and electrode materials. To conclude, the different strategies foreseen for a wide deployment of the technology as new portable power source are underlined. | physics.app-ph | physics | Micro solid oxide fuel cells: a new generation of micro-power sources
for portable applications
Francesco Chiabrera, Iñigo Garbayo, Nerea Alayo, Albert Tarancón*
Catalonia Institute for Energy Research (IREC). Jardins de les Dones de Negre 1, 2ª pl.; 08930 Sant
Adrià de Besòs. Barcelona (Spain)
* [email protected]
ABSTRACT
Portable electronic devices are already an indispensable part of our daily life; and their increasing number and demand
for higher performance is becoming a challenge for the research community. In particular, a major concern is the way to
efficiently power these energy-demanding devices, assuring long grid independency with high efficiency, sustainability
and cheap production. In this context, technologies beyond Li-ion are receiving increasing attention, among which the
development of micro solid oxide fuel cells (μSOFC) stands out. In particular, μSOFC provides a high energy density,
high efficiency and opens the possibility to the use of different fuels, such as hydrocarbons. Yet, its high operating
temperature has typically hindered its application as miniaturized portable device. Recent advances have however set a
completely new range of lower operating temperatures, i.e. 350-450ºC, as compared to the typical >900ºC needed for
classical bulk SOFC systems. In this work, a comprehensive review of the status of the technology is presented. The
main achievements, as well as the most important challenges still pending are discussed, regarding (i.) the cell design
and microfabrication, and (ii.) the integration of functional electrolyte and electrode materials. To conclude, the different
strategies foreseen for a wide deployment of the technology as new portable power source are underlined.
Keywords: micro solid oxide fuel cell, micro power source, thin film metal oxide, ceramic, microfabrication
1. INTRODUCTION
Batteries, with inherent limited capacity, have dominated the power supply of small devices for decades. However,
despite the fast evolution in the field, the energy gap between the capacity of the current battery technology and the
power requirements is increasing year by year 1. This energy divergence brings a great challenge on portable generation
that opens new opportunities for technologies beyond Li-ion for covering the gap created in the low power regime (1 to
5W). In this new scenario, a major breakthrough on the miniaturization of uninterrupted and efficient generators is
crucial.
The dream of downscaling one of the most efficient known generators, i.e. a fuel cell, has been unsuccessfully pursued
for years until recent advances in the miniaturization of Solid Oxide Fuel Cells (µSOFCs) converted this disruptive
technology into a serious candidate to power next generations of portable devices. Their reduced size, longer life time,
high power density and possibility of integration make μSOFC very attractive. Until now, the development of μSOFC
has been mainly based on the fabrication of self-supported membranes supported on microfabricated substrates 2–4.
Lately, alternative designs based on the use of porous substrates have also shown very promising results 5. The main
material used for the micromachined substrate has been silicon, due to the well-known, controlled and established
microfabrication technology based on it. Other substrates have been however also utilized, including glass or metals. By
creating free-standing membranes, thin electrolytes (i.e. below 500 nm) with low ionic resistance can be accessed from
both sides by fuel and oxygen respectively, and operating temperatures can be lowered to < 500ºC, as compared to the
typical high working temperatures of bulk SOFC systems, > 900ºC. Moreover, micro and nanotechnology has permitted
reducing the size and thermal mass of the µSOFC device allowing quick and low energy consumption start-ups as well,
crucial for portable applications.
Nowadays, the current technology allows operation between 350-450 ºC, with power densities as high as 1000mWcm-2,
using state-of-the-art electrolyte materials and mainly noble metals as electrodes 2,4,6–8. However, after focusing for very
long time on reducing operating temperatures, extending these range to higher temperatures (>600ºC) might
paradoxically be needed for portable applications, if we want to integrate easy-to-handle and available (liquid)
hydrocarbons, whose reforming typically takes place in that temperature range 9. In this rage of intermediate
temperatures, several issues related to leakage control, electrode instability and integration of μSOFC modules with other
components of the complete powering system are however still to be solved.
In this manuscript, we review the status of the technology from different perspectives. First, we focus on the cell design
and its integration in different supporting substrates, and second, we put the attention on the functional materials utilized
for the electrolyte and the electrodes, respectively. We present as well own results on the integration in mainstream
silicon technology of μSOFC devices based on free-standing large area electrolytic membranes. Full system modelling is
presented for supporting the feasibility of the whole power source into real scenarios. Finally, we anticipate possible
strategies for further development of the technology, towards a stable long term operation and its final deployment.
2.1 Micro SOFC concept
2. DESCRIPTION OF THE TECHNOLOGY
Microelectromechanical systems (MEMS) technology has been the main fabrication method used to produce µSOFCs.
Mainstream microfabrication techniques allow large-scale and low-cost production of high quality devices. Silicon
substrate-based free-standing electrolyte membranes is one of the most promising approaches for the fabrication of
µSOFC power generators (PG). Among many other properties, silicon is one of the most abundant elements on the earth,
and the possibility to change its electrical conductivity by simply doping or oxidizing the material makes it extremely
interesting for the semiconductors field. Silicon micromechanization techniques have been developed during decades by
the industry and, therefore, mass production of µSOFC power generators based on silicon substrate could be easily
implemented.
Since in 2009 Evans et al. 2 reviewed the most relevant works on µSOFC devices 7,8,10–13, several have been the
improvement achieved in terms of design, materials and performance. For instance, Garbayo et al. 3 developed a novel
microfabrication method to obtain enlarged and more robust electrolyte membranes by using a grid of doped-silicon
slabs as mechanical support. In addition, a metallic heater can be adapted to this doped-silicon nerves to instantly heat
the membrane in a homogeneous mode. By means of this technology, membranes with active areas of ~8 mm2 were
created on a full ceramic µSOFCs that generated 100 mW/cm2 power at temperatures of 750 ºC. Moreover, most of the
self-supported membranes on silicon are square shaped due to the anisotropic wet etching of the substrate 7. However, it
has been demonstrated that circular shape provides enhanced mechanical stability to the membrane avoiding stresses
created on the corners 14. Thanks to the doped-silicon slabs the shape of the membrane is defined by the lithography step
rather than the wet etching and circular membranes can be achieved. In Figure 1 large YSZ circular membranes
supported by doped-silicon slabs can be observed. Following a similar approach, Tsuchiya et al. 4 published large YSZ
membranes supported on a metallic grid. They achieved a maximum power density of 155 mW·cm-2 at 510 ºC using a
membrane with an active area of 13.5 mm2. Another very interesting microfabrication approach is that suggested by An
et al. 15, who in fact achieved the highest power output ever published on a µSOFC, 1.3 W·cm-2. They enhanced the
active area of the membrane by using a three-dimensional nanostructured membrane fabricated by means of nanosphere
lithography (NSL) and atomic layer deposition (ALD).
Alternatives to silicon as support for the free-standing membranes can be also found in literature. Ulrich et al. 11 used
Foturan, a photostructurable glass ceramic substrate. Here, the areas to be etched are exposed to UV light and
crystallized at 500-600ºC. Then, the crystallized areas are selectively etched in HF. Foturan was selected as substrate
material for µSOFC due to its thermal expansion coefficient (8.6x10-6 K-1 in the glassy state and 10.5x10-6 K-1 in the
crystalline state), which matches with the most typical µSOFC materials.
Figure 1. (a) Silicon chip with 1 cm2 membrane supported by doped-silicon slabs. (b) Microscope image of the circular YSZ
membranes interconnected with the doped-silicon slabs.
Parallel to all that, several publications have appeared on the fabrication of μSOFC following a different approach, i.e.
using porous supports for the thin film active layers. Joo et al. 16 proposed an anode supported µSOFC based on porous
nickel thin film, avoiding lithography and etching processes. NiO paste was screen printed on a ceramic substrate and
then reduced in H2 atmosphere. The porous Ni film was transferred to a Ni plate and the subsequent fabrication of the
fuel cell was performed on top of it. Recently, porous AAO (anodic aluminum oxide) 5 and porous stainless steel (STS)
17 anode supported µSOFC have also been presented. Porous substrates allow the simple fabrication of large area
µSOFCs, as well as, potentially reduce the amount of pinholes generated due to particle injection (see section 2.2).
However, the main challenge of using porous substrates is to obtain thin and high quality electrolyte throughout the
entire surface due to the intrinsic inhomogeneity of the supporting material.
2.2 The electrolyte
The electrolyte represents the core element of thin film-based μSOFCs. It has to fulfil the following basic requirements:
(i.) conduct oxide ions with low enough resistance (an Area Specific Resistance, ASR, of 0.15 Ωcm2 is generally
targeted 18), (ii.) be dense and gas tight to avoid leakages between oxidizing and reducing chambers, as well as electronic
shortcuts between electrodes and (iii.) be thermomechanically stable along the whole range of operating temperatures,
i.e. up to 750ºC.
The most studied and utilized materials for μSOFC electrolytes have been Yttria-stabilized Zirconia (YSZ) and
Gadolinia-doped Ceria (GDC) 19,20. Both materials have been extensively used in bulk macro SOFC systems, thus their
mechanical and electrochemical properties are well known. While YSZ presents slightly lower ionic conductivity as
compared to GDC, the main issue with GDC is its low stability under reducing atmospheres (ceria is reduced, becoming
electronic conductor as well) 21. The use of GDC is therefore usually hindered as single electrolyte layer, since it cannot
be exposed to H2 fuel in the anode, and typically has to be complemented with a thinner YSZ protective layer.
Classically, high temperatures were needed for reaching low enough resistivity. However, by downscaling them to thin
films (i.e. sub μm thickness), the operating temperature could be significantly reduced 6,22. Great efforts have been put in
the last decades on the deposition of thin electrolyte layers 20 and several approaches have been pursued, including spray
pyrolysis 23–25, sputtering 26,27, Pulsed Laser Deposition (PLD) 6,19,28–31, Chemical Vapour Deposition (CVD) 32,33 or
Atomic Layer Deposition (ALD) 10,34,35. In particular, physical vapour deposition techniques, mainly PLD, ALD and
sputtering, have been proven to be very effective on the deposition of dense and homogeneous layers of such complex
oxide films, see e.g. Figure 2c. Importantly, they can also be adapted for large area deposition and thus easily integrated
in a silicon microfabrication process for batch-production.
Depending on the μSOFC design, the challenges encountered for thin film electrolyte fabrication are different. Thus, the
main challenge for electrolytes in silicon-based free-standing μSOFCs is the appearance of pinholes, mainly due to dust
and/or particle ejection during thin film growth. These unwanted particles can act as shadow masks and create holes
through the thin film. On the other side, the main problematic of electrolytes on the porous anode-supported μSOFCs is
the ability of growing thin dense and continuous electrolyte layers on top of a highly porous supports. Figure 2a,b shows
cross-section and top view optical images of a free-standing YSZ electrolyte membrane integrated in silicon. Figure 2c
shows a cross-sectional exemplifying image of a free-standing YSZ layer, with platinum layers in both sides. The
buckling pattern seen in Figure 2b is typical, and comes from the high compressive stress of the YSZ film 32. This
compressive stress is indeed beneficial, in order to withstand the volume changes during heating and cooling cycles. As
mentioned before, the fact of being free-standing and extremely thin makes very important to control the substrate
surface quality and the deposition process in order to avoid any defect on the membrane (in the form of pinholes or
cracks). Figure 2d,e exemplifies the appearance of pinholes and cracks on an YSZ membrane, what provokes dramatic
failure of the cells by shorting the two electrodes. The main strategies for increasing the survival rate of the membranes
are (i.) a conscientious pre-cleaning of the substrates to avoid shadowing effects during deposition by the dust particles
and (ii.) the use of low-grain size and thermomechanically stable targets to reduce the particle ejection while grain
growth. By doing so, the density of shadowing particles could be minimized and virtually eliminated 36.
Figure 2. (a) Cross-sectional photograph of a free-standing YSZ membrane supported on a silicon platform. (b) Top view
optical image of a free-standing YSZ membrane. (c) Cross-sectional SEM image of an YSZ free-standing film with Pt
electrodes on both sides. (d) Top view SEM images exemplifying the appearance of cracks on a free-standing membrane. (e)
SEM image of a pinhole created from a particle that shadowed the electrolyte thin film deposition. (f) Arrhenius
representation of YSZ ionic conductivity on a free-standing membrane, compared to GDC and YSZ bulk and thin film
references 21,28,30. The label "thickness" in the right Y axis refers to the electrolyte thickness needed for obtaining an Area
Specific Resistance of 0.15 Ωcm2.
Figure 2e shows an Arrhenius representation of ionic conductivity of YSZ and GDC, in bulk and thin film form. These
values are compared to the ionic conductivity measured through an YSZ free-standing membrane, supported on silicon
(orange circles). As it can be observed, YSZ cross-plane conductivity matches well with the expected values according
to literature for both bulk and thin films. The right Y axis displays the required film thickness for reaching the target
value of 0.15 Ωcm2. Film thicknesses in the order of 100 nm are required for reaching operating temperatures of 400ºC
with YSZ. This marks the lower limit in temperature for the use of YSZ as free-standing electrolyte in μSOFC. If lower
operating temperatures are targeted, materials with higher conductivity would be required. On the other side, the proven
thermomechanical stability of the free-standing YSZ membranes up to ~750ºC 3 makes them perfectly suited for μSOFC
operation at T > 400ºC.
2.3 The electrodes
The electrodes in a μSOFC are of primarily importance for achieving high performance of the device, especially at low
and intermediate temperature. There are some requirements common to both the oxygen electrode (cathode) and the fuel
electrode (anode), which have to be fulfilled in order to assure fast electrochemical reactions of the reactants 37. Firstly, a
high electronic conductivity is requested to permit a facile current collection. In the case of using a pure electronic
conductor (i.e. a metal), the area active to the electrochemical reactions is typically the triple phase boundaries (tpb),
namely the points of contact between the cathode, the electrolyte and the gas phase. The use of highly porous thin films
increases the tpb, allowing better electrochemical performances. When a mixed ionic electronic conductor (MIEC) is
used, the active area is extended to the whole electrode surface. Nevertheless, also in a MIEC a porous structure is
favoured to maximize the contact area between the gas phase and the electrode. Finally, the electrodes should be
chemical compatible with the other components and stable over time, in order to assure constant characteristics over the
whole life time utilization.
The most used electrodes in μSOFCs (both as anode and as cathode) are Platinum thin films 2,38,39. Pt is known to have
good electrochemical activity towards the reactants and can be easily deposited by sputtering technique, evaporation or
PLD. The films deposited are typically dense and a thermal treatment is necessary to obtain the desired porosity, due to a
phenomenon called dewetting 40–42. Nevertheless, the dewetting also lead to a fast degradation of the Pt electrodes,
causing the risk of loss of the electrical percolation at intermediate temperature (500ºC-800ºC) 43. The upper part of
Figure 3 shows the typical evolution of a sputtering deposited Pt thin film after annealing at 750ºC for different time.
This degradation mechanism is particularly important in μSOFCs, because it can cause the loss of electric contact
between the electrolyte membrane and the silicon substrate, determining the failure of the device 44. Moreover, the use of
a pure electronic conductor as electrode in a μSOFC can generate electrical constrains in the nanometric thin film
electrolyte. When the film thickness is of the order of the Pt particle size, the electrolyte ionic resistance does not scale
linearly with the electrolyte thickness but can saturate, leading to a decreasing of the benefits of nanometric membranes
45. The use of electroceramic MIEC electrodes can provide a solution to both these problems 3. Porous ceramic thin films
can be easily deposited by PLD at high oxygen partial pressure 19. The lower part of Figure 3 shows the typical evolution
with time at 750ºC of a Gadolinia-doped Ceria thin film. The first annealing causes an opening of the structure porosity,
which is desired to increase the active surface. After this, the structure shows a stable behaviour, with no further changes
due to the temperature. The use of MIEC thin films can also avoid the undesired effect of electrolyte electrical
constrains, because its active surface assures a homogenous distribution of the ionic conduction.
.
Figure 3. Typical evolution of sputtering deposited Pt and PLD Gd-doped Ceria (CGO) at high temperature. The Pt film
shows dewetting and agglomeration in separated islands, while the CGO film displays, after a first enlargement of porosity,
a stable behaviour over time.
Beside Pt thin films, other materials have been explored as anode in μSOFCs. The anode electrode must present a good
electrochemical activity towards the oxidation of Hydrogen. In bulk SOFC, typically a cermet of Ni-YSZ is used, which
combines the good catalytic activity of the Ni with the high oxygen conductivity of YSZ. A similar approach applied to
46, who synthetized by templated sol–gel chemistry coupled with dip-
anode thin films, has been used by Müller et al.
coating process, thin films of NiO/Ce0.9Gd0.1-O2-δ. Buyukaksoy and co-workers deposited thin films of NiO-YSZ, and
demonstrated the feasibility of employing them as anode in μSOFCs operating at 550ºC 47. In addition to the metal-
oxides cermet, ceramic electrodes have been also explored. Porous nano-columnar Ce0.8Sm0.2O1.9-δ have been deposited
by PLD on YSZ single crystal by Jung and co-workers 48. The MIEC thin film obtained showed low activation losses for
the Hydrogen electro-oxidation due to its low tortuosity and high activity of the Ceria. Garbayo et al. deposited porous
Ce0.8Gd0.2-O1.9-δ by PLD and tested the anode properties in a symmetrical μSOFC 3. The anode thin film showed good
electrochemical properties at 650ºC, highlighting the possibilities of using doped ceria as single material anode in
μSOFCs.
The use of cathode thin films has been extensively explored in literature. The high interest in obtaining high cathode
performance is because the Oxygen reduction reactions (ORR) is one of the more limiting processes in the overall
behaviour of a SOFC, especially at intermediate temperatures. Therefore, the choice of cathode materials is determinant
for a large employment of μSOFCs. MIEC thin films of different chemical composition and deposited by different
techniques have been investigated and tested. Thin films of La0.6Sr0.4Co0.8Fe0.2O3 (LSCF) have been deposited by
Ramanathan and co-workers by sputtering technique 44,49. In their work, they measured a complete μSOFC with LSCF as
cathode and Pt as anode, founding a maximum power of 60mW/cm2 at 500ºC. Garbayo and co-workers deposited porous
thin films of La0.6Sr0.4CoO3-δ (LSC) by PLD 50. They tested the electrochemical properties in a symmetrical μSOFC, with
YSZ as electrolyte, finding values of area specific resistances lower of 0.3 Ω/cm2 at 700ºC. Moreover, they demonstrated
that the porous film was stable at this temperature and tested a fully ceramic μSOFC for high temperature applications 3.
LSC was also deposited by salt-assisted spray pyrolysis by Evans et al. 51, proving the possibility of integrating different
techniques in the creation of a complete μSOFC.
The use of MIEC ceramic electrodes appears to be the best solution for improving the performances of μSOFCs and
guaranteeing a long life to the device 45. Still, further work is necessary to study the characteristics of these promising
thin films.
2.4 µSOFC as power generator device
The fuel cell stack is the essential element of a µSOFC based Power Generator (PG). Nevertheless, other components are
also required to create a complete portable power source, such as a fuel pre-processor unit (FPU) for hydrogen
production from a hydrocarbon fuel (if necessary), a catalytic post-combustion unit (CPU) for exhaust gas processing
and a heat management unit consisting of a heat exchanger (HX) and a thermal insulation (INS) that defines a hot
module (HM). The µSOFC PG operation is described as: fuel and air are fed separately into the FPU. The fuel is heated
(and vaporized in the case of liquid fuels) in the µvaporizer. A first fraction of fuel is chemically converted into simpler
molecules in the µreformer, i.e. H2, CO and CO2. In parallel, air is heated and provided to the cathode side of the
µSOFCs. Hydrogen and air react in the fuel cell membrane, producing electrical power and heat. The unreacted fuel
mixes with the remaining air in the CPU where is completely burned. Finally, clean exhaust leaves the device.
In 2008, Bieberle-Hütter et al. 52 described for the first time the design of a complete µSOFC system for portable
applications. The system consisted of a microfabricated solid-oxide fuel cell stack, a gas processing unit (fuel reformer
and post-combustor) and a thermal system (a fuel and an air pre-heating unit, heat exchanger and insulation). One single
modular element was sized for 2.5 W electrical energy output and it had an overall volume smaller than 65cm3. The
modularity of the system enabled adapting it to different power needs, by repeating this module it was possible to
achieve higher power. Later, the same group studied the thermal design requirements for the system by means of global
steady state and energy balances 53. Particularly, they studied the impact of the overall electrical efficiency, the air-to-
fuel ratio and the non-adiabatic heat losses on the operating temperature. Their method provided a useful tool to create a
first thermal design layout. However, they concluded that, for overall electrical efficiencies of 20-40% and the wide
range of possible heat-loss-to-power ratios, the thermal design configuration cannot be universally applied for 2.5 to 20
Wel systems. To improve the method, experimentally obtained current-voltage characteristics should be considered in
order to obtain the electrical efficiency; the auxiliary power consumption need to be taken in consideration; and the
transient behaviour for systems that are capable of part load operation or demand a quick start-up time need to be
validated. In regard to this, Poulikako's group proved that, in the case of µSOFC systems, a hybrid start-up process is
faster and energetically more efficient than electrical heating alone, achieving a time reduction of 139 s by ten times
higher electrical energy input 32,54.
Even though the above mentioned works depict a helpful first approach to understand the complexity of the system, a
complete design of the whole SOFC PG, including the geometry and experimental data from the individual elements,
was necessary to advance in the optimization of the stacking configuration, the heat management strategy and the steady-
state and transient regimes. Pla et al. 9 proposed a vertical stack of all the elements that compound the whole SOFC
power generator. The vertical stack design and parameterization of each component was based on experimental work
presented in previous publications of the authors 3,6,32,36. A three-dimensional thermo-fluidic model and finite volume
analysis was employed to study the SOFC power generator of 1Wel output in steady and dynamic conditions fuelled
with ethanol. At 450 ºC, the system showed a self-sustained regime of operation for an insulation configuration based on
materials with a thermal conductivity of 5 mW·m-1·K-1 and a thickness of 10 mm. A membrane supported in a grid of
silicon slabs was proposed to improve the observed inhomogeneity of the temperature distribution inside the SOFC. A
quick transient regime from room temperature was proven by employing a hybrid electrical-chemical start-up.
In addition to the modelling of the complete µSOFC power generator device, there have been some experimental efforts
toward the integrations of micro-reformers on the system. Pla et al. 55 have successfully fabricated and tested a
standalone micro-reformer to the in situ generation of hydrogen from hydrocarbons. The micro-reformer consists of an
array of vertically aligned through-silicon micro-channels (20k micro-channels per square centimetre) and resistive
metallic heater, all embedded in a low-thermal-mass structure suspended by an insulating membrane. Ethanol conversion
rates of 94% and hydrogen selectivity values of 70% were obtained when using operation conditions suitable for
application in micro-solid oxide fuel cells, 750 °C and fuel flows of 0.02 mlL min−1. Bieberle-Hütter et al. 56 also
fabricated a micro-reformer to covert butane in hydrogen and use it in SOFC applications. After some modifications in
design, they combined the micro-reformer with a micro-fuel cell assembly to create a thermally self-sustained micro-
power plant 38. The system was operated using n-butane in air, which is partially oxidized in the micro-reformer at 410
ºC thanks to the integrated heater. A maximum power density of 47mW/cm-2 was achieved at 565 ºC for an individual
membrane.
3. STRATEGIES FOR LARGE MICRO SOFC DEPLOYMENT
μSOFCs have experienced great advances in the last years, what have pushed the technology to new limits that were not
even imagined only a few decades ago. The miniaturization of the device and its integration in silicon technology have
allowed reducing the operating temperatures by several hundreds of degrees with respect to the standard SOFC.
Currently, a new operating temperature range is set for μSOFC at 300 < T < 450ºC, where the electrolyte presents low
ionic resistance and the electrodes are structurally stable over time.
At first, reducing the temperature was considered crucial for facilitating encapsulation and integration of other
components needed in the final system (circuiting, fluidic connections…). However, nowadays the technology finds
himself in a dilemma. On one side, a limit in lowering the temperature has been found at ~300ºC. This is clearly
insufficient for an easy manipulation and encapsulation of the system, for which going to ca. room temperature would be
required. On the other side, higher temperatures would be needed for promoting hydrocarbon reforming, if integration of
easy-to-handle fuels is intended. However, while at those temperatures (ca. 700ºC) the electrolyte membranes have been
proven to be stable, the most widely utilized metallic electrodes are quickly degraded, what drastically limits the cell
lifetime and performance. μSOFC technology is therefore nowadays in a no-man´s land, and the perspectives of wide
deployment are limited unless significant structural changes are made. Here, we envision two opposed strategies for
boosting again the technology towards new more reliable operating ranges.
The first approach consists of lowering the operating temperature even more, ideally to values close to room
temperature. In this new range, encapsulation and fluidics would be easier, potentially made of plastics, and heat
management would not limit design and performance. In order to reach this goal, main challenges are, first, developing
electrolytes with higher conductivity than YSZ able to operate at lower temperatures and, second, integrating electrodes
with enhanced surface catalytic activity. For both, the use of nanoionic effects, i.e. actively using local defects by e.g.
grain-boundary or strain engineering, can potentially be the final solution for enhancing electrochemical properties.
An opposed second approach is foreseen as well, by abandoning the highly degrading metallic electrodes and
substituting them by more thermomechanically stable ceramics. This would allow widening the operating temperature
window to higher temperatures. In this case, new possibilities appear for the use of safe and easy-to-handle hydrocarbons
as fuels 55. These could be either directly used at the μSOFC, or chemically converted into hydrogen via a fuel
processing unit within the system. However, thermal management would be an important challenge here. Given the
enhanced heat transfer in micro systems (via conduction, convection and radiation), delivering those high temperatures at
low electrical power devices and in a small package would require an excellent insulation and a very compact integration
of all the components. Moreover, the start-up process would have to allow reaching the operation temperature of the
reforming/fuel cell zones quickly and with minimum energy consumption, especially for portable applications 57. In this
sense, components with reduced thermal masses are targeted 21.
4. CONCLUSIONS
A review of the main advances on the development of μSOFC experienced in the last years is presented in this work.
Two main cell designs are highlighted, i.e. the free-standing membrane based cells and the porous anode-supported cells.
While the main advantage of the first is the integration of the system in the well known and scalable silicon technology,
the second offers the possibility of fabricating large but still robust cells. Nowadays, an operating temperature window
has been found at T=300-450ºC for stable μSOFC operation, by using thin YSZ or GDC electrolyte layers and porous
metallic electrodes as anode and cathode. Operating at either lower or higher temperatures is however currently hindered,
by either the electrolyte-associated resistance (too high at lower temperatures) or the electrode microstructural instability
(films dewet at higher temperatures over time). Widening the operating temperature window is considered crucial for the
deployment of the technology. Two strategies are anticipated. First, low temperature operating μSOFC with easy
encapsulation and heat management are proposed by the development of high ionic conducting electrolytes. Second,
increasing the operating temperature of μSOFC above 600ºC would help to integrate microreformers, for the use of safe
and available hydrocarbon fuels.
ACKNOWLEDGEMENTS
This project has received funding from the European Research Council (ERC) under the European Union's Horizon
2020 research and innovation programme (ERC-2015-CoG, grant agreement No #681146- ULTRA-SOFC)
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|
1708.04848 | 1 | 1708 | 2017-08-16T11:22:11 | Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage | [
"physics.app-ph",
"cond-mat.mes-hall"
] | Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells. | physics.app-ph | physics | Single-nanowire, low-bandgap hot carrier solar cells with tunable
open-circuit voltage
Steven Limpert1*, Adam Burke1, I-Ju Chen1, Nicklas Anttu1, Sebastian Lehmann1, Sofia Fahlvik1,
Stephen Bremner2, Gavin Conibeer2, Claes Thelander1, Mats-Erik Pistol1 and Heiner Linke1*
1NanoLund and Solid State Physics, Lund University, Box 118, 22100 Lund, Sweden
2School of Photovoltaic and Renewable Energy Engineering, University of New South Wales,
2052 Sydney, Australia
*email: [email protected], [email protected]
Abstract
Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially
higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers"
before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated
in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in
low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-
circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low
bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we
point out that this device is a hot carrier solar cell and discuss its performance in those terms.
In the demonstrated devices, InP heterostructures are used as energy filters in order to
thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber
segments. The obtained photovoltage depends on the heterostructure design of the energy
filter and is therefore tunable. By using a high-resistance, thermionic barrier an open-circuit
voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide
generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap
materials, and therefore are a step towards the demonstration of higher efficiency hot carrier
solar cells.
Keywords: hot carriers, photovoltaics, Shockley-Queisser limit, photothermoelectrics, III-V
nanowires
1
Introduction
When a semiconductor of bandgap EG absorbs a photon, the portion of the photon
energy exceeding EG becomes kinetic energy of the photogenerated electron and hole. In pn-
junction solar cells, this excess kinetic energy is transferred as waste heat to the lattice by
electron-phonon interaction and cannot be converted to electrical potential energy [1,2]. To
avoid this energy loss, and to potentially increase the maximum power conversion efficiency
to as much as 85% [3], it has been suggested to extract work from hot carriers before they
cool to the lattice temperature [2–6]. Specifically, it was predicted that a thermoelectric
contribution to device voltage would be present when a photoinduced temperature gradient
is present across a carrier-energy filtering heterostructure [7,8]. In this way, hot-carrier solar
cells can recover a portion of the 400 mV voltage loss attributable to the cooling of carriers
from 6000 K to 300 K [2], and thus allow larger voltages than those achievable in conventional
single-junction solar cells made of the same materials.
Work towards the realization of hot carrier solar cells has proceeded in many
directions. Transport of photogenerated carriers through Si quantum dots in SiO2 has been
investigated [9,10]. Ultra-fast, hot electron collection has been demonstrated in bandgap
engineered GaAs/AlGaAs heterostructures [11,12] and hot carrier transport across an
InP/PbSe interface has been studied [13]. Hot carriers have been spectroscopically observed
and predicted to result in solar cell efficiency enhancement in GaAsP/InGaAs quantum wells
[14] and hot carrier photocurrent has been observed in a GaAs/InGaAs quantum well solar
cell [15]. Ferroelectric insulators have been demonstrated to exhibit above bandgap
photovoltages [16] and barium titanate, BaTiO3, has been shown to exhibit power conversion
efficiencies in excess of the Shockley Queisser limit [17] due to hot carriers and the bulk
photovoltaic effect [18,19].
All of the above demonstrations of extraction of photogenerated, hot carriers have
been performed in materials with a relatively large bandgap (i.e. EG > 1 eV). However, the
maximum power conversion efficiency achievable with a hot carrier solar cell depends upon
the bandgap of the material, and the theoretically achievable efficiency in hot carrier solar
cells is the highest in low-bandgap materials (i.e. EG < 0.5 eV) [3,4]. Recently, we reported
single-nanowire, photothermoelectric devices that produced bipolar currents under
2
illumination by different wavelengths of light [20]. Here, we point out that these devices are
in fact, low-bandgap hot carrier solar cells as they were made of wurtzite (WZ) InAs, which
has a room temperature bandgap of only 0.39 eV [21,22]. In this work, we expand upon the
discussion of these devices and show that they are hot carrier solar cells. We do this by
comparing their measured current voltage (I-V) curves to the Shockley-Queisser [23] detailed
balance limit for an ideal pn-junction solar cell composed of the same absorbing material and
showing that the open-circuit voltage of the highest resistance single-barrier device exceeds
this limit. Then, we discuss the energy conversion process that allows achievement of this
limit-breaking photovoltage. Next, we demonstrate that photovoltage tunability through
heterostructure engineering is a characteristic of the presented low-bandgap hot carrier solar
cells by showing that when we increase energy filter transmissivity, we increase device
conductivity and we decrease the achievable open-circuit voltage. Finally, we discuss topics
for future work.
Methods: Device Design and Fabrication
The devices in this study are based on single nanowires with either a single- or double-
barrier heterostructure acting as an energy filter (Fig. 1). The basic principle for the generation
of photocurrent and photovoltage in these hot carrier solar cells is illustrated in Fig. 1b,e and
relies on: (i) energy filters that separate photogenerated hot carriers (Figs. 1c and 1d), and (ii)
absorption hot spots forming near the filters to give rise to photogenerated carriers in their
vicinity (Figs. 1b and 1e). This localized increase in carrier concentration is possible because
light absorption in a nanowire is not homogenous, but concentrated in hot spots
corresponding to maxima of electromagnetic wave modes [20]. Electron-hole pairs are
photogenerated predominantly in these hot spots and there establish a local non-equilibrium
carrier temperature that can be much higher than the lattice temperature [20,24,25]. When
an absorption hot spot is located within a hot-carrier diffusion length of a few hundred
nanometers from an energy filter, hot electrons can diffuse across the filter before cooling.
This charge movement results in a measurable photocurrent from which electrical power can
be extracted (Fig. 1b) and the separation of photogenerated electrons and holes leads to the
formation of an open-circuit voltage (Fig. 1e).
3
Nanowires are ideal for hot carrier solar cells for several reasons. First, their optical
properties are highly tunable [26]: the concentration and confinement of light inside the
nanowire (i.e. photonic effects) can be combined with the electromagnetic generation of
surface-confined, oscillating electron plasmas at metal-dielectric interfaces (i.e. plasmonic
effects) to control the position of spatially well-defined photon-absorption hot spots within
the nanowire. This enables the ideal, nearby positioning of energy filters for fast carrier
separation and work extraction (Fig. 1b, e). Second, because of radial strain relaxation,
nanowires are more amenable to bandgap engineering than planar devices [27,28]. This
enables heterostructures of materials of desirable bandgaps and band offsets to be selected
and fabricated with atomic precision and with low defect densities. Third, likely because of
reduced electron-phonon interaction in nanowires, the temperature of photogenerated
carriers can be much higher than that of the lattice [20,25]. Finally, a single-nanowire device
setup enables the use of a backgate (Fig. 1f) to tune the carrier concentration during
experiments [29]. This enables us to experimentally access different conductivity regimes
within a single device.
4
Figure 1 Single nanowire hot carrier solar cell. A, Scanning transmission electron high angle
annular dark field micrograph of an InAs/InP heterostructure nanowire with single- and
double-barrier InP segments that each can act as energy filter. In any given device, only one
of the segments is used as an energy filter; the other one is not contacted. InAs and InP
segments are false colored (InAs – pink, InP – yellow) as a guide to the eye. b, Band diagram
of a single-barrier device under short-circuit current conditions. The red area indicates the
location of a hot spot of photon absorption and carrier generation. Steps 1-3 indicate the
process of current generation: (1) photogeneration of an electron-hole pair; (2) diffusion of a
hot electron across the barrier, followed by thermalization; (3) the electron leaves to the left
and drives a current through the circuit, filling the photogenerated hole from the right. The
electron quasi-Fermi levels, EFn, at the contacts are indicated by red lines. c,d Band diagrams
under short-circuit conditions and geometry of the heterostructures used in this work. e, Band
diagram of a single-barrier device under open-circuit voltage conditions at a bias of 0.37 V. f,
3D illustration of a single barrier hot carrier solar cell with electrical measurement circuit.
Spacing between the inner edges of the contacts is 400 nm.
In the proof-of-principle demonstration of Ref. 19, we used wurtzite (WZ) InAs as the
absorber material because of its small bandgap, EG = 0.39 eV [21,22], corresponding to light
with bandgap wavelength lG = 3180 nm, allowing absorption of a broad spectrum of light.
Furthermore, InAs exhibits high electron-hole asymmetries of effective mass and mobility,
5
enabling photogeneration of high-energy, fast-diffusing electrons and low-energy, slow-
diffusing holes, thereby assisting in electron collection across the energy-filter and charge
separation. As the barrier/energy-filter material, we used InP (EG = 1.34 eV, lG = 925 nm) [30].
We further defined two types of InAs/InP heterostructures (Fig. 1a), namely (i) single,
thermionic barriers because they are predicted to produce the highest thermoelectric power
[31,32] (Fig. 1c) and (ii), double-barriers - which have been previously used in hot carrier solar
cell experiments [11,12] - because of the energy filtering effect [33] of resonant tunneling
structures (Fig. 1d).
InAs/InP nanowire heterostructures with atomically sharp interfaces were grown
using chemical beam epitaxy (CBE) (Fig. 1a). Nanowires were transferred to an SiO2 substrate
equipped with a backgate, and we electrically contacted individual nanowires by electron
beam lithography (Fig. 1f). Contacts were fabricated with a 400 nm inner separation, ensuring
that hot carriers would only need to travel a maximum of about 200 nm to be collected across
the heterostructure before they cooled – a much shorter distance than an estimated hot-
carrier diffusion length in InAs (see Supporting Information for more information). The InAs
material was naturally n-type and no pn-junction was present within the nanowires. Both
types of energy filters used were grown into the same nanowires (Fig. 1a), and contacts were
placed around the structure of interest in different devices (Fig. 1f). For clarity, in the following
sections of this paper, devices in which contacts were placed around a double-barrier
quantum dot will be referred to as double-barrier devices and devices in which contacts were
placed around a single, thermionic barrier will be referred to as single-barrier devices.
Devices were electrically characterized in vacuum in a variable-temperature (T = 6 K –
300 K) probe station with optical fiber access. DC electrical measurements were made using
the measurement circuit shown in Fig. 1f using a Yokagawa 7651 DC source, a Stanford
Research Systems SR570 current preamplifier, a Hewlett Packard 34401A multimeter and a
Keithley 2636B SourceMeter. For photovoltaic characterization we used light generated by a
supercontinuum laser and selected by a monochromator resulting in a Gaussian spectrum
with a center wavelength of 720 nm and a full-width at half-maximum of 140 nm. Integration
of the spectrum's spectral irradiance results in a computed irradiance of 17.6 kW/m2 and
integration of the spectrum's spectral photon flux results in a computed total above-bandgap
photon flux of 6.77×10'' photons/m2 (see Supporting Information for method details).
6
Results and Discussion
Dark and illuminated current voltage (I-V) curves of the single-barrier device show that
it was fabricated properly and that it produces electrical power when illuminated (Figure 2).
The dark current-voltage curve of the single-barrier device is symmetric and exponentially
increasing under both forward and reverse bias (Figure 2a). This is the characteristic current-
voltage shape for thermionic emission over a barrier and confirms that the device does not
contain a pn-junction. The figures of merit of the illuminated single-barrier device (Figure 2b)
are as follows: short-circuit current, ISC = -13.3 ± 0.2 pA, open-circuit voltage, VOC = 368 mV ±
5 mV, and fill-factor, FF = 27.5 ± 0.4 %.
To place these results into context, we computed the dark and illuminated current
voltage curves of an ideal pn-junction diode made of WZ InAs using the Shockley-Queisser
detailed balance method (see Supporting Information for details). The calculated figures of
merit of an ideal pn-junction solar cell made of WZ InAs that has the same projected area and
surface area as the presented nanowire device and that is illuminated by the experimental
spectrum are as follows: ISC = -165.6 pA, VOC = 251 mV, and FF = 68.7%.
Comparison between the VOC = 368 mV measured for the illuminated single-barrier
device and that of an ideal pn-junction (VOC = 251 mV) provides strong evidence that hot-
carrier energy conversion is essential to the voltage generation in the presented device, and
enhances the achievable voltage compared to a pn-junction made of the same contacted
absorber material. Our interpretation is that in the presented device kinetic energy of hot
photogenerated electrons is converted into voltage based upon a thermoelectric effect
[7,8,20], extracting electrical power from the differential in carrier temperature across the
thermionic barrier. Because of this mechanism, hot carrier solar cells are not bound by the
Shockley Queisser detailed balance limit, which assumes isothermal energy conversion.
7
Figure 2 Dark and illuminated current voltage curves of an experimental single-barrier
device and of an ideal pn-junction diode made of WZ InAs computed using the Shockley-
Queisser detailed balance method. a, Measured current voltage curve of the single-barrier
device in the dark at room temperature (red curve). Calculated current voltage curve of an
ideal pn-junction diode made of WZ InAs computed using the Shockley-Queisser detailed
balance method in the dark at room temperature (black curve). b, Measured current voltage
curve of the single-barrier device under illumination at room temperature (red curve).
Calculated current voltage curve of an ideal pn-junction diode made of WZ InAs under the
same illumination at room temperature computed using the Shockley-Queisser detailed
balance method (black curve).
While the single-barrier device exceeds the VOC of an ideal pn-junction solar cell made
of WZ InAs, the measured ISC = -13.3 ± 0.2 pA and FF = 27.5 ± 0.4 % are much lower than those
for the corresponding ideal pn-junction (ISC = -165.6 pA, FF = 68.7%). This results in a lower
power conversion efficiency of the single-barrier device compared to an ideal pn-junction
solar cell made of WZ InAs. There are three possible reasons for this smaller ISC: first, the
nanowire does not absorb all of the light that it is incident upon its projected area as its
diameter is too small to support guided modes at the illumination wavelength. Second, not
all of the light that is absorbed is absorbed in the hot spot next to the energy filter. Third,
some photogenerated electrons and holes are likely to recombine within the single-barrier
device before they are separated across the energy filter. This could happen if (1) a hot
electron cools before crossing the energy filter, (2) the cooled electron recombines with its
hole before being recycled up to energies high enough to cross the energy filter or (3) the hot
electron diffuses in the direction opposite to the energy filter and recombines without
8
encountering the energy filter. The smaller FF in the single-barrier device compared to an
ideal pn-junction solar cell made of WZ InAs is because the current voltage curve of the single-
barrier device is linear in the power producing region. This is a characteristic of thermoelectric
devices [34] and hot carrier solar cells based on the bulk photovoltaic effect [16–19].
While hot carrier solar cells are based on a thermoelectric effect, they offer
opportunities for high-efficiency energy conversion that are different than those offered by
traditional thermoelectrics. This is because the presence of hot carriers can lead to very large
temperature differentials over very small distances and between different distributions of
particles (e.g. electrons and phonons). In comparison to traditional thermoelectric devices -
in which performance is limited by parasitic heat flow in the lattice [35] - the heat transfer to
the lattice in a nanoscale hot carrier solar cell can be suppressed if hot carriers are extracted
from the device before they cool to the lattice temperature, a process that can be enhanced
if electron-phonon energy exchange is inhibited by phononic engineering. As discussed in Ref.
[20], we estimate the differential in the electron (carrier) temperature in the presented
devices to be 170 K across the single-barrier, a value that is consistent with measurements of
the non-equilibrium carrier temperature sustained in photogenerated carrier populations
generated in small diameter nanowires under steady-state illumination [25]. Such a large
temperature gradient would not be sustainable in traditional thermoelectrics, where carriers
and phonons generally are in local thermal equilibrium, and it significantly enhances the
achievable thermoelectric energy conversion efficiency. Importantly, power optimization and
efficiency limits of thermionic thermoelectrics have been studied [31,32,36,37] and it has
been shown that maximum power can be achieved at TC = 300 K using a kx filter with a barrier
height of 1.1kBTH [31]. Given the estimated TH of 470 K, this corresponds to a barrier of 45
meV. In this optimal configuration, a thermoelectric efficiency limit at maximum power of
~38% of the Carnot efficiency is predicted [31], corresponding to ~14% efficiency for the given
TC and TH – a result which is in agreement with the quantum bounds on thermoelectric power
and efficiency [37].
How do hot carrier solar cells compare to pn-junction solar cells in terms of strategies
to boost their open-circuit voltage? In pn-junction solar cells, increasing the open-circuit
voltage requires the elimination of sources of non-radiative recombination in order to
decrease bias-induced dark current and increase the 'turn on' voltage of the diode that
9
comprises the solar cell. While reducing non-radiative recombination to increase short-circuit
current is also important in hot carrier solar cells, of similar importance is engineering the
energy-filtering, charge-separating heterostructure. To achieve a high open circuit voltage in
a low-bandgap hot carrier solar cell, we find that it is necessary to have an energy filter that
is highly resistive to low energy electrons and holes, while simultaneously highly transmissive
to high energy electrons. An energy filter with these characteristics enables achievement of a
large open-circuit voltage because (1) it prevents backflow leakage of cooled photogenerated
electrons after they have transited the energy filter (2) it decreases the bias-induced dark
current of the device and (3) it inhibits the movement of low-energy photogenerated holes,
ensuring that ambipolar movement of photogenerated electron-hole pairs is avoided. These
physics are embedded in the following expression which describes how in a planar,
illuminated, power-producing device with a linear current voltage curve and a thickness, 𝑑,
conductivity [17], 𝜎* and 𝜎+,, respectively:
the open-circuit voltage is inversely proportional to the sum of the dark and illuminated
𝑽𝑶𝑪= 𝑱𝑺𝑪𝒅
𝝈𝒅+𝝈𝒑𝒗
(1)
In short, in a hot carrier solar cell, the photovoltage can be tuned by engineering the
conductivity of the energy-filtering, charge-separating heterostructure.
Indeed, in our experiments, we observe an increase in the device conductivity and a
decrease in the achievable open-circuit voltage when we use a double-barrier quantum dot
(Fig. 1c) instead of a single, thermionic barrier (Fig. 1d) as the heterostructure energy filter.
The increased conductivity of the double-barrier device in comparison to the single-barrier
device can be attributed to the many current-carrying, resonant energy levels that exist below
the barrier height in the quantum dot between the double-barriers. These energy levels result
in a room temperature, zero gate voltage conductance that is approximately four orders of
magnitude greater than that of a single-barrier device (Fig. 3a). Because of this high
conductivity, to observe power-producing photocurrents and photovoltages under
illumination, it is necessary to cool the double-barrier devices to 𝑇= 6 K and to apply a back-
gate voltage of VG = −20 V to suppress dark conductivity. Even then, the high transmissivity
10
a low maximum open-circuit voltage of only ~17 mV (Fig. 3b).
of the double-barrier heterostructure results in high illuminated conductivity and therefore,
Figure 3 Dark conductance comparison and double-barrier current voltage curves. a,
Conductance (left axis) and resistance (right axis) of three devices: a pure InAs nanowire, a
double-barrier device and a single-barrier device as a function of backgate voltage, VG, at
room temperature. b, Dark and illuminated current voltage curves of a double-barrier,
quantum dot device at T = 6 K and VG = -20 V. In this regime, the nanowire is fully depleted
and behaves as an insulator in the dark (black curve). Under illumination, the device is
photoconductive and produces electrical power (red curve). In comparison to the single-
barrier device, the double-barrier device exhibits a larger short-circuit current (Isc = -34 pA),
but a smaller open-circuit voltage (Voc = 17 mV).
Conclusion and Outlook
We foresee several routes to increasing the short-circuit current and the fill-factor of
the presented low bandgap nanowire hot carrier solar cells. To increase the short-circuit
current, we anticipate that the following strategies may be useful: (i) increasing nanowire
diameter to increase absorption, (ii) optically designing contacts to increase absorption and
to concentrate absorption on one side of and nearby an energy filter, (iii) passivating the
nanowire surface to increase electron mobility and lifetime (iv) optimizing the placement,
height and width of the energy filter, (v) tailoring the nanowire diameter, crystal phase and
heterostructures to minimize electron relaxation rates due to phonon scattering, and (vi)
adding a hole contact to collect holes and reflect electrons. Additionally, we anticipate that
these optimization techniques may be applied in the modeling-guided design of vertical
nanowire arrays [38] in which photons are absorbed more strongly closer to the tips of the
wires. Modeling suggests that it is possible to design nanowire diameter and array pitch such
11
that a broadband absorption hot spot is present within the top 500 nm of the wires, where
an energy filter could be placed within their hot-carrier diffusion length. Furthermore,
additional concentration of longer wavelength light into this volume may be possible by use
of plasmonic elements [39,40]. Finally, to increase the fill factor, we anticipate adding band
bending into the device by doping or by local gating to induce nonlinearity in the illuminated
current voltage curve.
Material choice will also play an important role in optimizing the devices described in
this work. It is likely that by moving to absorbers with smaller bandgaps, higher carrier
temperatures and efficiencies can be achieved as a larger fraction of photon energy will be
converted into carrier kinetic energy. Moving to a wider bandgap barrier would likely enable
larger open-circuit voltages by decreasing the thermionic dark current. However, maximum
power has been predicted to be achieved with the estimated temperature difference at a
barrier height of 45 meV [31], suggesting that a move to a narrower bandgap barrier material
would be advantageous. In the end, to better understand the practical and the theoretical
efficiency limits for these devices, and to determine the precise parameters of an ideal
bandstructure, comprehensive optoelectronic and thermal device modelling will be required
including self-consistent hydrodynamic simulations.
Acknowledgements
The authors thank Magnus Borgström, Gaute Otnes and Pyry Kivisaari for discussions, and
acknowledge financial support by an Australian-American Fulbright Commission Climate
Change and Clean Energy Scholarship and by a UNSW University International Postgraduate
Award to S.L., by NanoLund, by Swedish Energy Agency (award no. 38331-1), by the Knut and
Alice Wallenberg Foundation (project 2016.0089), by the Swedish Research Council (project
no 2014-5490) by the Solander Program and by the Australian Government through the
Australian Renewable Energy Agency (ARENA). Responsibility for the views, information, or
advice expressed herein is not accepted by the Australian Government.
12
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15
Hot-carrier Diffusion Lengths
𝐿= 𝐷𝜏
travels before it recombines, namely
In conventional photovoltaics, a figure of merit used to evaluate material quality and
design devices is the diffusion length, 𝐿, the average distance that a photogenerated carrier
where 𝐷 is the diffusivity of the particle and 𝜏 is the particle lifetime. If we replace 𝜏 by 𝜏CD,
thermal distribution, we can compute a thermalization diffusion length, 𝐿CD, an approximate
Furthermore, if we replace 𝜏, with 𝜏EFFG, the time that it takes photogenerated carriers to cool
average distance that a photogenerated carrier will travel during the process of carrier-carrier
thermalization:
the time that it takes photogenerated carriers to thermalize amongst each other to form a
to the lattice temperature, we can compute a corresponding hot-carrier cooling diffusion
length:
(4)
(2)
(3)
Supporting Information
𝐿CD= 𝐷𝜏CD
𝐿EFFG= 𝐷𝜏EFFG
information on the distances over which
These figures of merit provide useful
photogenerated hot-carrier transport can likely be experimentally observed.
To compute approximate values for these figures of merit for electrons in InAs, we can
combine data on the diameter-dependent mobility of electrons in InAs nanowires (𝜇I=
10J cm'/Vs ) [1] with the Einstein relation (𝐷=𝜇𝑘O𝑇 𝑒) [2] and approximate
thermalization by electron-electron interaction (𝜏CD=1 ps, the time scale for establishing a
carrier temperature) and cooling times by electron-phonon interaction (𝜏EFFG=100 ps, the
time scale for carrier cooling to the lattice temperature) [3]. Assuming a temperature, 𝑇, of
300 K to establish a lower bound, we arrive at the following: 𝐿CD= 𝜇𝑘O𝑇𝜏CD 𝑒≈160 nm
temperature (which may be much higher than the lattice temperature) and 𝐿EFFG=
𝜇𝑘O𝑇𝜏EFFG 𝑒≈1.6 µm is the length scale on which electrons in InAs cool to the lattice
less than 𝐿EFFG.
temperature. In a hot-carrier solar cell, carrier separation must be achieved on a length scale
is the length scale on which photogenerated electrons in InAs establish an effective carrier
16
Illumination
For photovoltaic characterization, we used a Fianium Femtopower 1060
Supercontinuum Source with emission from 500 nm to 1850 nm, a maximum power output
of 8 W and a repetition rate of 82.5 MHz coupled into a Princeton Instruments SP2150 Double
Monochromator. All presented measurements were performed using the monochromator's
grating with 150 lines per millimeter, 800 nm blaze. Illumination spectra were measured with
an Avantes Avaspec-3648-usb2 silicon CCD spectrometer and the power of narrowband slices
of the source emission were measured with a Thorlabs power meter (item number: PM100D)
and silicon and germanium photodiodes (item numbers: S120C and S122C).
The spectral irradiance, 𝐹, of the spectrum that was used to illuminate our devices
narrowband power, 𝑃 (Figure S1a), was linearly interpolated and divided by the product of
the cross-sectional area of the optical fiber, 𝐴=𝜋∙(100 µm)' to compute irradiance. In this
and that was used as the input to our Shockley-Queisser detailed balance model was obtained
in the following manner from the measured spectra and narrowband powers. The measured
calculation of irradiance, we neglected divergence of the beam. This is a valid assumption as
the fiber tip was placed directly atop the sample during illuminated current voltage
measurements. Therefore, there was negligible distance over which the beam could diverge.
Then, to calculate spectral irradiance from irradiance, the irradiance was multiplied by 0.954
and divided by the narrowband bandwidth, 𝑊, of 60 nm, which was determined from a
Gaussian fitting of the measured narrowband spectrums (Figure S1b). This calculation of
spectral irradiance assumes an equal contribution to power from each wavelength within the
narrowband, which is a valid assumption as the supercontinuum source emission power as a
function of wavelength is flat, and is based on the fact that 95.4% of the area of a Gaussian
curve is contained within two standard deviations on either side of the peak. This spectral
irradiance was then multiplied by a Gaussian with amplitude of 1, center at 720 nm and
standard deviation of 60 nm as determined from a fitting of the normalized broadband
experimental spectrum spectrometer data (Fig. S1c), 𝐺=𝑒𝑥𝑝 −'' abc'd ef
gd ef '
end, the spectral irradiance, 𝐹, is given by the expression
multiplication of the broadband spectral irradiance by a narrower-band Gaussian captures
the effect of the monochromator selecting a portion of the available spectrum. Thus, in the
. This
17
𝐹=0.954𝑃𝐺𝐴𝑊
The computed spectral irradiance, 𝐹, of the spectrum used to illuminate our devices
(5)
and used as the input to the Shockley Queisser detailed balance model is presented in Fig. S2.
Its integration results in an irradiance of 17.6 kW/m2. Dividing by photon energy and
integrating gives a total photon flux of 6.77×10'' photons/m2.
Figure S1 Illumination characterization. a, Measured narrowband spectrum power as a
function of center wavelength. b, Measured spectrum of a narrowband slice fit by a Gaussian
with a standard deviation of 15 nm and a center wavelength of 606 nm. c, Measured spectrum
of the broader-band slice used to illuminate devices fit by a Gaussian with a standard
deviation of 60 nm and a center wavelength of 720 nm.
gives a total photon flux of 6.77×10'' photons/m2.
Figure S2 Spectral irradiance of experimental spectrum. Integration of the spectral
irradiance results in an irradiance of 17.6 kW/m2. Dividing by photon energy and integrating
18
Shockley-Queisser Detailed Balance Model
The principle of detailed balance was used by Shockley and Queisser to compute the
limiting power conversion efficiency for single-junction pn-junction solar cells [4] (i.e. the
Shockley-Queisser limit). To compute the limiting power conversion efficiency, a particle
balance model was employed that enabled the computation of current voltage curves from
which the figures of merits (i.e. short-circuit current, open-circuit voltage and fill-factor) could
be extracted and the power conversion efficiency computed. The particle balance model was
physically based upon the fact that all objects emit blackbody radiation and that the radiation
emitted by a pn-junction increases exponentially with increasing splitting of the electron and
hole quasi-Fermi levels within the pn-junction, that is, with increasing forward bias voltage.
This exponentially increasing emission from a pn-junction is caused by the current that flows
through the device when it is biased: holes and electrons flow from opposite ends of the pn-
junction towards each other and recombine, emitting light. Shockley and Queisser used this
radiative recombination current as a physically-based lower-limit to the power-dissipating
current which must flow through a pn-junction under bias [4]. Importantly, the Shockley-
Queisser limit on the power conversion efficiency of a pn-junction solar cell depends only on
the spectrum of the incident light and the bandgap of the absorbing material. Therefore, in
our detailed balance modeling, we employ the spectral irradiance of our experimental
spectrum (Fig. S2) and the room temperature bandgap of wurtzite InAs, EG = 0.39 eV.
Three types of particles are tracked in our detailed balance model: 1) absorbed
photons, 2) emitted photons and 3) moving charge carriers. The "balancing" of the model is
captured in that the absorbed photons, Φlmn (units of photons per second), must be equal to
the sum of the emitted photons, Φofp (units of photons per second), and the charge-carriers
that move through a connected circuit, Φqq (carriers per second):
Algebraically rearranging, multiplying both sides by the fundamental charge, 𝑒, (in order to
(6)
Φlmn=Φqq+Φofp
𝐼𝑉 =−𝑒Φlmn−Φofp𝑉
convert moving charge-carriers into current) and using a negative sign to denote a power-
producing current, the current voltage curve of the solar cell can be computed as:
For the idealized solar cell, we assume that all photons with energy above the bandgap of the
absorber are absorbed (and generate one electron-hole pair). This assumption maximizes the
(7)
19
𝑑𝜆
𝜆𝐹ℎ𝑐
wx
ydd ef
Φlmn=𝐴
photocurrent generation, and consequently, the open-circuit voltage of the cell. Thus, the
number of absorbed photons, Fabs, is independent of voltage and is computed from
where 𝐴 is the illuminated area, 𝐹 is the spectral irradiance of our experimental spectrum
(Fig. 2a) and we use 𝐸{}p}e=ℎ𝑐 𝜆, where ℎ is Planck's constant and 𝑐 is the speed of light,
Fig. S2), and the upper limit is 𝜆~ = 3180 nm corresponding to the wurtzite InAs bandgap.
to convert spectral irradiance into a number of photons per meter-squared per meter of
wavelength. The lower integration limit is the shortest wavelength of our source (500 nm, see
(8)
Integration of the integrand results in the computation of a photon flux. Then, to convert from
a photon flux to a reasonable estimate of the maximum amount of photons absorbed by our
nanowire device, we generously assume an absorption efficiency of unity and multiply by the
projected surface area of the device. In this case, we consider the device to be the exposed
semiconductor nanowire in between the inner contact edges and neglect absorption under
the contacts or in portions of the nanowire extending beyond the contact edges. Based upon
analysis of SEM and TEM images, the inter-contact length, 𝐿, is taken to be 400 nm and the
diameter, 𝐷, of a representative nanowire is taken to be 40 nm, giving a projected area of
The voltage-dependent emitted photon number, Φofp𝑉 - that is, the radiative
16´10-15 m2.
electron-hole pair recombination current as a function of voltage - is computed as the integral
over energy of the modified Planck blackbody radiation equation [5,6] for emission into the
full sphere surrounding the device:
Φofp𝑉 =𝐴(cid:127)(cid:128)(cid:129)(cid:130)(cid:131)E(cid:132) 4𝜋ℎ(cid:133)𝑐'
(9)
𝐸'
exp 𝐸−𝑞𝑉𝑘𝑇
−1𝑑𝐸
(cid:137)
(cid:138)(cid:139)
Note that in Eq. (9) we assume, implicitly, an emissivity of unity for all emission angles
corresponding to our assumption of unity of absorption efficiency. To convert from an
emitted photon flux to a rate of photons emitted by a cylindrical device, we multiply by our
device's surface area: 𝐴(cid:127)(cid:128)(cid:129)(cid:130)(cid:131)E(cid:132)=𝜋𝐷𝐿≈ 50´10-15 m2. In doing this, we consider the device
contact edges. As in the computation of absorption, the inter-contact length, 𝐿, is taken to be
to be the exposed semiconductor nanowire in between the inner contact edges and neglect
emission from under the contacts or from portions of the nanowire extending beyond the
20
400 nm and the diameter, 𝐷, of a representative nanowire is taken to be 40 nm. When there
is no illumination, Φlmn is zero, and Φofp(𝑉) can be used to compute the detailed balance
limit for dark current through a diode comprised of a material having the bandgap, 𝐸(cid:140).
Importantly, the above detailed balance limit calculations assume an absorption and
emission efficiency of one for our nanowire device across the wavelength range of our
experimental spectrum and the device's wavelength range of emission. However, due to
diffractive effects in sub-wavelength sized devices, the absorption efficiency and the emission
efficiency, Qabs and Qems, can in fact be smaller than or larger than 1. We have used
electromagnetic modeling to investigate the Qabs of our nanowire device (Figure S3) and for
unpolarized light, we find that Qabs is less than one within the wavelength range of our
spectrum (Figure S3b). Thus, from this modeling, we expect that the absorption performance
of the nanowire device leads to a lower short-circuit current density compared to the
idealized, unity absorption efficiency case. In the detailed balance analysis, a lower short-
circuit current (due to a reduction in Φlmnin Eq. (7)) leads to a lower open-circuit voltage.
Thus, we rule out absorption enhancement as a possible cause for the high open-circuit
voltages observed in our single-barrier devices.
Furthermore, there are two reasons why we can rule out low emission efficiency as
the cause of the single-barrier device's high open-circuit voltage. Firstly, we find by inclusion
of the emission efficiency into the detailed balance analysis (see below), that an extremely
low – and likely, unphysical – emission efficiency is required to achieve a radiatively limited
open-circuit voltage as large as that which we experimentally observe. Secondly, we find
experimentally that the open-circuit voltage shows extremely strong dependence upon
heterostructure resistivity, which would not be the case if geometrically induced emission
suppression was the cause of the large open-circuit voltage as this would be the same in
structures of different heterostructure, but identical geometry.
To include modification of the emission properties by the nanowire geometry into the
𝐼𝑉 =−𝑒Φlmn−𝑄ofnΦofp𝑉
detailed balance analysis, we insert Qems into Eq. (7):
where Qems is the angle and wavelength averaged emission efficiency, which may be greater
than or less than the emission efficiency of unity assumed in Eq. (9). In the case Qems < 1, the
(10)
21
open-circuit voltage at a given Φlmn. When we calculate the dependence of open-circuit
solar cell emits, per surface area, fewer photons than a blackbody, which allows for a larger
voltage on Qems, we find that Qems = 0.018 is required to reach the experimentally observed
VOC = 368 mV (± 5 mV) in the detailed balance analysis (Fig. S4). This calculation assumes that
(i) recombination is 100% radiative (that is, there is no non-radiative recombination - which
reduces open-circuit voltage from the upper value given by radiative recombination), (ii) Qabs
= 1 within the incident spectrum range and (iii) 100% of photogenerated carriers are collected.
In the case that any of these three assumptions are not fulfilled, an even larger emission
suppression (i.e. lower emission efficiency) is required to reach VOC = 368 mV (± 5 mV).
COMSOL wave optic modelling of our experimental system shows that it does not exhibit
characteristic (ii) (Figure S3b) and it is extremely unlikely that our unoptimized devices exhibit
characteristics (i) or (iii). Therefore, an emission efficiency substantially less than 0.018 is
certainly required to reach VOC = 368 mV (± 5 mV). We deem such emission suppression as
highly unlikely in our device and therefore, discount it as the explanation for the high open-
circuit voltage produced by our single-barrier device. This assessment is strongly supported
by our finding that the open-circuit voltage shows extremely strong dependence upon
heterostructure resistivity, which would not be the case if geometrically induced emission
suppression was the cause of the large open-circuit voltage.
Figure S3 COMSOL computed absorption efficiency, Qabs, of contacted, single-barrier
device. a, Absorption efficiency for transverse electric (TE) and transverse magnetic (TM)
polarizations of light. Transverse refers to the direction of the specified field with respect to
the nanowire axis. b, Absorption efficiency for unpolarized (i.e. randomly polarized) light.
Note that the absorption efficiency Qabs is defined as nabs/ninc. Here, nabs is the number of
absorbed photons and ninc is the depicted number of photons that would be incident on the
22
depicted, illuminated geometrical cross-section Ageom of the device in a ray-optics description
of light. That is, ninc(λ) = AgeomIinc(λ)/(ħc2π/λ) with Iinc the incident intensity. Due to diffractive
effects in sub-wavelength sized devices, Qabs can be smaller than or larger than 1.
Figure S4 Detailed balance limit on open-circuit voltage as a function of emission
efficiency.
23
Supporting Information References:
[1]
[2]
[3]
[4]
[5]
[6]
Ford A C, Ho J C, Chueh Y-L, Tseng Y-C, Fan Z, Guo J, Bokor J and Javey A 2009
Diameter-Dependent Electron Mobility of InAs Nanowires Nano Lett. 9 360–5
Neamen D 2003 Semiconductor Physics And Devices (New York, NY, USA: McGraw-Hill,
Inc.)
Shah J 1992 Hot Carriers in Semiconductor Nanostructures - Physics and Applications
(1250 Sixth Avenue, San Diego, CA 92101: Academic Press Inc.)
Shockley W and Queisser H J 1961 Detailed Balance Limit of Efficiency of p-n Junction
Solar Cells J. Appl. Phys. 32 510–9
Wurfel P 1982 The chemical potential of radiation J. Phys. C Solid State Phys. 15 3967–
85
Green M A 2006 Third Generation Photovoltaics: Advanced Solar Energy Conversion
(Heidelberg: Springer)
24
|
1808.10141 | 1 | 1808 | 2018-08-30T06:42:48 | Precise control on morphology of ultrafine LiMn2O4 nanorods as supercapacitor electrode via two-step hydrothermal method | [
"physics.app-ph"
] | We report three different synthesis routes while maintaining similar reaction conditions to choose an effective way to precisely control the growth of ultrafine one dimensional LiMn2O4 in the form of nanorods. We developed a novel method of mixing the precursors through hydrothermal, yielding low dimensional precursors for effective solid state reaction to synthesize the nanorods. However, to achieve these, highly uniform beta-MnO2 nanorods were initially grown as one of the main precursors. The uniformity observed in as grown beta-MnO2 nanorods using hydrothermal technique help to attract minute LiOH particles upon mixing over its highly confined nanoregime surface. This facilitated the solid state reaction between MnO2 and LiOH to develop one of the finest LiMn2O4 nanorods with diameters of 10 - 80 nm possessing high surface area of 88.294 m2/g. We find superior charge storage behaviour for these finely ordered 1D nanostructures as supercapacitor electrodes in KOH with K3Fe(CN)6 as electrolyte in contrast to Li2SO4. A high pseudo - capacitance of 653.5 F/g at 15 A/g is observed using galvanostatic discharge time with high retention capacity of 93% after 4000 cycles. The enhanced charge storage property may arise from the redox couple [Fe(CN)6]3n/[Fe(CN)6]4n and K+ ions of the electrolyte. To the best of our knowledge, we demonstrate for the first time the effectiveness of a two step hydrothermal method in tuning the supercapacitive behaviour of 1D LiMn2O4 in redox additive electrolyte. | physics.app-ph | physics | CrystEngComm
Page 2 of 17
Precise control on morphology of ultrafine LiMn2O4 nanorods as supercapacitor
electrode via two-step hydrothermal method
Niraj Kumara*, K. Guru Prasadbc, T. Maiyalaganb and Arijit Senbc*
aKalasalingam Academy of Research & Education, Krishnankoil, 626126, India
bSRM Research Institute, SRM Institute of Science & Technology, Kattankulathur 603203,
India
cDepartment of Physics & Nanotechnology, SRM Institute of Science & Technology,
Kattankulathur 603203, India
*Corresponding Author E-mail: [email protected], [email protected]
Abstract
We report three different synthesis routes while maintaining similar reaction conditions to
choose an effective way to precisely control the growth of ultrafine one-dimensional (1D)
LiMn2O4 in the form of nanorods. We developed a novel method of mixing the precursors
through hydrothermal, yielding low dimensional precursors for effective solid state reaction
to synthesize the nanorods. However, to achieve these, highly uniform β-MnO2 nanorods
were initially grown as one of the main precursors. The uniformity observed in as grown β-
MnO2 nanorods using hydrothermal technique help to attract minute LiOH particles upon
mixing over its highly confined nano-regime surface. This facilitated the solid state reaction
between MnO2 and LiOH to develop one of the finest LiMn2O4 nanorods with diameters of
10-80 nm possessing high surface area of 88.294 m2/g. We find superior charge storage
behaviour for these finely ordered 1D nanostructures as supercapacitor electrodes in KOH
with K3Fe(CN)6 as electrolyte in contrast to Li2SO4. A high pseudo-capacitance of 653.5 F/g
at 15 A/g is observed using galvanostatic discharge time with high retention capacity of 93%
after 4000 cycles. The enhanced charge storage property may arise from the redox couple
[Fe(CN)6]3−/[Fe(CN)6]4− and K+ ions of the electrolyte. To the best of our knowledge, we
demonstrate for the first time the effectiveness of a two-step hydrothermal method in tuning
the supercapacitive behaviour of 1D LiMn2O4 in redox additive electrolyte.
Keywords: Hydrothermal; nanorods; supercapacitor; galvanostatic, redox additive
1. Introduction
To meet the increasing energy demands, natural resources (e.g. fossil fuels) are being
depleted at a faster rate whence is the need for an alternate energy resource [1-7].
Supercapacitors can be a promising alternative owing to its high energy density, stability,
cyclability and power efficiency [8-11]. They are being used extensively in hybrid vehicles,
as power stabilizers in electronic devices and renewable energy systems [12-15]. They can
also provide high power when coupled with batteries and fuel cells [7, 16, 17]. Unfortunately,
they suffer from low charge capacity, compared to Li-ion batteries [18]. Pseudocapacitors can
be a solution to this which collectively enjoys the advantages of both supercapacitor as well
as Li-ion battery [19-26]. Different materials like Li4Ti5O12, LiMn2O4, NaxMnO2 etc. have
been studied in recent time as cathode materials for asymmetric supercapacitor to increase
their efficiency [27-33]. Among them, spinel LiMn2O4 (LMO) is one of the most promising
cathode materials due to its environmentally benignity, thermal stability and low cost [34].
CrystEngCommAcceptedManuscriptPublished on 25 July 2018. Downloaded by Kaohsiung Medical University on 7/25/2018 4:08:30 PM. View Article OnlineDOI: 10.1039/C8CE01029C Page 3 of 17
CrystEngComm
Preparation of LMO with high rate capability and capacitance is a challenge for
researchers. Developing nanoscale materials is a solution to this and so the syntheses of
nanorods, nanowires, nanotubes and nanochains have gained much interest among
researchers [34-39]. The intercalation and de-intercalation of charges improves with the use
of nanoscale materials which ensures good ionic and electronic conductivity [40]. Fehse et al.
[41] have demonstrated ultrafast dischargeable LiMn2O4 thin film electrodes with
pseudocapacitive properties for microbatteries. Benjamin et al. [42] have studied mesoporous
LixMn2O4 thin film cathodes as lithium-ion pseudocapacitors. However, most of the
electrolytes (LiPF6 and LiClO4) used for energy storage need inert atmosphere requiring high
cost. Aqueous electrolyte is an alternative as it can be used in ambient condition. LiMn2O4
nanomaterials are being studied in aqueous electrolytes as promising electrode material [36-
39]. Wang et al. [43] have shown spinel LiMn2O4 nano-hybrid comprising nanotubes,
nanoparticles and nanorods as high-capacitance positive electrode material
for
supercapacitors in aqueous electrolyte. It may be noted that there are still very few reports on
pseudocapacitive performance of LiMn2O4 nanorods in aqueous electrolyte. Moreover, there
is a lack of proper synthesis technique to develop high quality LiMn2O4 nanorods for its
commercialization.
In the current work, we followed a solid state reaction to grow LiMn2O4 nanorods of
10-80 nm diameters, after a novel hydrothermal route for effectively mixing the precursors
utilizing as synthesized β-MnO2 nanorods. Hydrothermal technique was preferred for its
simplicity and effectiveness [44-47]. Hypothetically, this could be a first report on utilization
of two-step hydrothermal process to achieve one of the finest 1D structures of LiMn2O4.
Surface analysis through BET method and morphological analysis through FESEM were
followed in selection of optimized synthesis steps from three different synthesis procedures at
similar reaction conditions. The supercapacitive performance of the as synthesized LiMn2O4
nanorods was evaluated in two different aqueous electrolytes, namely Li2SO4 and KOH with
K3Fe(CN)6 as redox additive. In the later case, we observed a much superior charge storage
properties. For the first time, we demonstrate the promising pseudocapacitive property of
LiMn2O4 nanorods in redox additive.
2.1 Chemicals
Potassium permanganate (KMnO4), Sodium nitrite (NaNO2), Sulphuric acid (H2SO4),
Potassium hydroxide (KOH), Potassium ferricyanide (K3Fe(CN)6), Lithium sulphate
(Li2SO4), Polyvinylidene fluoride (PVDF) and Super P carbon were procured from Sigma
Aldrich and all the solutions were made with de-ionized water.
2.2 Growth of β-MnO2 nanorods
In usual synthesis, 5 mM and 7.5 mM of KMnO4 and NaNO2, respectively were mixed in 2:3
molar ratios in 37.5 ml of de-ionized water and magnetically stirred for nearly one hour to
obtain dark red coloured solution. Then, 2.5 ml solution of 0.4 M H2SO4 was prepared and
added drop-wise at specified intervals of time so that there is a slow transition of this dark red
coloured solution into light red. The solution was bolted inside 50 ml autoclave and heated at
170
C for 12 h. The autoclave was left to get cooled, normally. The final product was seen to
be settled beneath the residual liquid. Finally, a reddish brown coloured product was
⁰
collected after washing with de-ionized water for a couple of times and drying in air at 80
C.
It was then heated for 350
C for 6 h to remove un-reacted impurities in way to obtain highly
pure β-MnO2 nanorods.
⁰
⁰
CrystEngCommAcceptedManuscriptPublished on 25 July 2018. Downloaded by Kaohsiung Medical University on 7/25/2018 4:08:30 PM. View Article OnlineDOI: 10.1039/C8CE01029C CrystEngComm
Page 4 of 17
C for 24 h and named as S2 after its centrifugation and cleaning.
⁰
C. The final product was centrifuged and washed for several times and named as S3.
2.3 Growth of LiMn2O4 nanorods
For the synthesis of LiMn2O4 nanorods, 0.4868 g of as synthesized β-MnO2 nanorods was
thoroughly mixed with 0.12 g LiOH•H2O in 40 ml of de-ionized water under continuous
stirring. After half an hour, the solution was transferred to 50 ml teflon and sealed inside
⁰
autoclave for hydrothermal process at 170
C for 12 h. Same as before, the final product was
washed and dried in air to obtain fine black coloured powder. It was then kept for solid state
⁰
reaction by heating at 750
C for 24 h. The final product was centrifuged, washed for several
times and named as S1.
In way to optimize the synthesis procedures, 4 mg LiOH•H2O was added at the start
of the β-MnO2 nanorods synthesis process along with KMnO4 and NaNO2 and the same
synthesis steps were followed. The as obtained product was then allowed for solid state
⁰
reaction at 750
In another typical synthesis, different synthesis steps were as followed. 0.4868 g of as
synthesized β-MnO2 nanorods was thoroughly mixed with 0.12 g LiOH•H2O through
vigorous grinding in agate mortar. Few drops of ethanol were added during grinding to make
solution paste. The grinding was done until the mixture fully dried up at room temperature.
The mixture was then kept in alumina boat and allowed for solid state reaction for 24 h at
750
2.4 Preparation of positive electrode for supercapacitor
For the preparation of cathode material 8:1:1 weight ratio of LiMn2O4, super P carbon and
PVDF were mixed by grinding in agate. Super P carbon and PVDF were added respectively
to improve the conductivity and adhesiveness of LiMn2O4 as the active material. N-Methyl-2-
pyrrolidone was added into the mixture to form gelatinous solution. 304 grade steel plate with
0.3 mm thickness was used as substrate upon which 0.7 mg of as prepared electrode material
was coated uniformly within area of 1 cm2. The coated plate was then dried at 80C for 12h.
2.5 Characterization
Structural properties were evaluated using XRD and Raman analyses through 'PAN
analytical X' Pert Pro diffractometer and 'LASER Raman spectrometer', respectively.
Physical overviews of the samples were made through FESEM and HRTEM analyses using
'Quanta 200 FEG FE-SEM', and 'HR-TEM, JEM-2010', respectively. Electrochemical
studies were carried on Biologic SP300. A three electrode system was employed with
silver/silver chloride (Ag/AgCl, 3M KCl) and platinum wire as reference and counter
electrodes respectively for as prepared cathode material as working electrode.
3 Results and discussions
3.1 Structural and morphological analyses
To confirm the structure of the sample, obtained after the hydrothermal treatment of KMnO4,
NaNO2 and H2SO4 compounds, XRD spectrum was obtained as presented in fig. 1a. The
major diffraction peaks at 2θ = 28.6, 37.3, 41.1, 42.8, 56.6, 59.3, 67.2 and 72.3 are seen to be
aligned in sequential order of intensity ascribing the planes (110), (101), (200), (111), (211),
(220), (310) and (301), respectively with no other impurity peaks. This reveals highly pure
tetragonal beta phase MnO2 according to JCPDS 24-0735 [44]. Raman spectroscopy was
followed to further strengthen the structural identification of as prepared β-MnO2 sample. The
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Raman spectra shown in fig. 1b, reads two prominent peaks at 574 and 644 cm-1 due to
vibrating and stretching modes of Mn-O bonding in MnO6 octahedra structure confirming the
tunnel structure of β-MnO2 [48, 49]. The as synthesized β-MnO2 are in nanorods shape with
diameters in range of 10-40 nm as seen clearly from FESEM images presented in fig. 1c-d.
The morphologies seen are strictly 1D and no other shapes are visualized which reveals
ultrafine nature of the as synthesized β-MnO2 nanorods.
Figure 1. (a) XRD pattern (b) Raman spectra and (c-d) FESEM images of as prepared β-
MnO2.
Figure 2a, displays the XRD patterns for samples S1, S2 and S3. All the samples
commonly exhibit eight major diffraction peaks at 2θ = 18.688, 36.077, 37.935, 44.01,
48.233, 58.194, 63.9 and 67.311 corresponding to planes (111), (311), (222), (400), (331),
(511), (440) and (531) respectively. This strongly attributes to the cubic structure of LiMn2O4
according to JCPDS 88-1026. It may be noted that a constant phase for the different samples
is observed in-spite of their different synthesis procedures. This indicates that a perfect
optimization was achieved in all the three synthesis procedures due to the utilization of
comparable amount of chemical precursors followed by the solid state reaction. In agreement
with the XRD analysis, similar Raman spectra can be seen in fig. 2b for all the samples (S1-
S3) in the spectral region of 100-1000 cm-1. Prominent band at 640 cm-1 in conjugation with
two less intense bands at 611 and 569 cm−1 is conspicuous for all the samples. The high
intensity band at 640 cm-1 is in close proximity with the band observed in Raman spectrum of
β-MnO2 shown in fig. 1b, which strongly indicates stretching modes of Mn-O bonding.
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Octahedral MnO6 unit of as prepared LiMn2O4 experiences vibrations in oxygen atoms from
the spinel oxide ascribing to bands at 640 and 611cm−1 [50, 51]. The vibrations relate to bond
7 spectroscopic
stretching between manganese and oxygen atoms (Mn-O) ascribing to Oh
symmetry incorporating A1g species. The band at 569 cm-1 is seen to be not fully separated
from the main intensity peak as observed for all the samples and appears like shoulder to the
main high intensity band. This characteristic arises from the Mn+4 -- O vibrations and
[51]. The morphology of as prepared LiMn2O4
resembles Lithium stoichiometry in LiMn2O4
is revealed to be ultrafine nanorods of 10-80 nm diameters from the HRTEM images as
displayed in figure 2c. In corollary to the XRD analysis, d-spacing of 0.48 nm in (111) plane
is observed from the uniform fringes shown in HRTEM image (inset fig. 2c). The selected
area electron diffraction (SAED) pattern in fig. 2d of single nanorod shows the miller indices
(311), (400), (511) and (531) respective to the d-spacings matching with JCPDS 88-1026,
further confirms for the formation of LiMn2O4.
Figure 2. (a) XRD pattern and (b) Raman spectra of LiMn2O4 samples S1, S2 and S3; (c)
HRTEM image with (inset in c) d-spacing of 0.48 nm in growth direction (111) and (d)
SAED pattern of sample S1.
To explore a perfect synthesis route for the ultrafine nanorords growth, three different
syntheses procedures were studied through FESEM analysis. Samples S3, S2 and S1 are the
outcomes of the three syntheses procedures as mentioned above. From FESEM images of S3
(fig. 3a-b), it is clear that some microstructures are also present in conjugation with the
nanorods. It is assumed that for proper feasibility of the solid state reaction at 750⁰C, the
precursor (LiOH) must be interacted or adsorbed completely on to the surface of these as
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grown ultrafine β-MnO2 nanorods. Unfortunately, this can not be achieved through simple
uneven mixing in agate mortar as described earlier. Therefore, in our next attempt, we
directly added the precursors at start of the hydrothermal reaction, so that while these
nanorods grow, they could easily incorporate LiOH particles under the hydrothermal
pressure. Fortunately, comparatively less or smaller microstructures are seen in FESEM
images of sample S2 (fig. 3c-d). And finally, we followed two step hydrothermal processes,
one to grow the β-MnO2 nanorods and the second to homogenously mix the LiOH particles
on to the surface of these nanorods. This resulted in the formation of ultrafine LiMn2O4
nanorods as seen in FESEM images of sample S1 (fig. 3e-f). Thus hydrothermal method is
quite effective to obtain morphologies in nanoscale regime. The reason behind this could be
the as developed hydrothermal pressure which forces the different precursors to interact with
each other in way to release this pressure, thereby facilitating the chemical kinetics. To
highlight the optimization process, a schematic has been presented in fig. 4 to account for the
synthesis steps in preparation of samples S1, S2 and S3.
`
Figure 3. FESEM images of as prepared sample (a-b) S3, (c-d) S2 and (e-f) S1.
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Figure 4. Schematic for the growth conditions of samples S1, S2 and S3.
A physical overview on the growth mechanism of ultrafine LiMn2O4 nanorods (S1)
can be postulated based on the FESEM images shown in fig. 5(a-d) captured at times of 2, 6,
12 and 24 h, respectively, after the heat treatment at 750⁰C of LiOH and β-MnO2 nanorods. It
is clear that when the heating continued for 2 h then cloud like morphologies of the reagents
is seen covering the 1D structures. On further increasing the time of heat treatment to 6 h and
12 h, the cloud like morphologies begins to disappear suggesting the diffusion of elementary
particles into the interiors of 1D morphologies. This phenomenon predicts for the effective
solid state reaction between LiOH and β-MnO2 nanorods [52]. The chemical action at the
boundaries of 1D structures increases with increasing time of heat treatment. Finally after 24
h of heat treatment, complete disappearance of cloud like morphologies is perceptible. This
could be due to the fusion of elementary Li atoms into MnO2 structure via solid state reaction
giving rise to ultrafine LiMn2O4 nanorods.
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Figure 5: FESEM images of sample S1 after the solid state reaction between LiOH and β-
MnO2 nanorods at (a) 2 h, (b) 6 h, (c) 12h and (d) 24 h.
3.2 Surface analysis
Figure 6a-c shows the nitrogen (N2) adsorption-desorption isotherms of the samples S1, S2
and S3, respectively. A gradual increment in volume adsorption is perceptible for all the
samples. The adsorption-desorption curves coincide and resembles Type II for sample S1
(fig. 6a) and Type III for samples S2 and S3 (fig. 6b-c) [53]. The absence of adsorption-
desorption hysteresis can be attributed to the multilayer formation similar to macroporous
solids. Sample S1 may contain monolayer relating to Type II whilst for samples S2 and S3;
convex isotherm is viable depicting Type III. These diversified isotherms can be attributed to
the different morphologies as synthesized. The bending of isotherm occurs due to stronger
interactions between adsorbates then compared to their interaction with the adsorbent surface.
Therefore, for sample S2 and S3, formation of more multilayers composed of adsorbates is
expected. It is notable that these samples are blend of micro (or bulk) and nanostructures. On
the other hand, the ultrafine nanorods like structure (S1) exhibits almost linear isotherm due
to the presence of stronger interaction between adsorbent and adsorbate giving the
possibilities of only single layer formation. The volume adsorption for samples S1, S2 and S3
follows a decreasing order. In corollary, these fine nanorods (S1) shows high surface area of
88.294 m2/g compared to the surface areas of 42.988 and 21.477 m2/g for S2 and S3,
respectively (table 1). This can be ascribed to the confined 1D morphologies in sample S1.
Moreover, for sample S3, a little separation in absorption-desorption isotherm is conspicuous,
which corresponds to stronger interaction between adsorbent and adsorbate than sample S2.
This analysis confirms for larger micro or bulk structures presence in S3 than S2 and the most
confined structures in S1 which is evident from the above morphological analysis. The BJH
pore size distributions (PSDs) for samples S1, S2 and S3 are shown in fig. 6d-f, respectively.
The PSD histograms mainly converge around 1-3 nm. The average pore diameters and pore
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volume for sample S1, S2 and S3 are presented in table 1. Considerably small pore diameters
can be attributed to the highly confined morphologies in nanoscale regime.
Figure 6. (a -- c) Nitrogen (N2) adsorption -- desorption isotherms and (d-f) BJH pore size
distributions (PSDs) of samples S1, S2 and S3, respectively.
Table 1. BET surface area, average pore diameter and pore volume of sample S1, S2 and S3.
Sample
Surface area
Average pore
Average pore volume
(m2/g)
88.294
42.988
21.477
diameter
(nm)
2.145
1.949
1.593
S1
S2
S3
(cc/g)
0.119
0.078
0.038
3.3 Electrochemical studies
3.3.1 In Li2SO4 aqueous electrolyte
A three electrode system comprising Ag/AgCl (3M KCl), platinum wire and as prepared
electrode acting as reference, counter and working electrodes respectively were fabricated for
electrochemical studies. The test was carried out in 0.5 M Li2SO4 aqueous electrolyte. Similar
cyclic voltammograms are observed (fig. 7a) for all the samples S1-S3 at 5 mV/s in potential
window of 0.2 to 1.2 V. This suggests for complete similarity in phase and structure of as
prepared samples and agrees to the XRD and raman analyses. Figure 7b shows the cyclic
voltammetry (CV) measurements in potential window of 0.2 to 1.2 V at different scan rates
of 4, 6 and 8 mV/s. A pair of anodic oxidation peaks is observed at 0.88 and 0.98 V at
positive current whereas a pair of cathodic reduction peaks is present at 0.80 and 0.90 V at
negative current. Close symmetry of these two redox peaks pairs reveals for excellent
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reversibility of Li+ extraction and insertion into as spinel LiMn2O4 nanorods. This may due
for the ultra finesse morphology of nanorods favouring short diffusion path between
electrode/electrolyte interfaces. The two anodic and cathodic reverse activities can be
ascribed to two partitioned process of lithiation/de-lithiation as mentioned below [42]:
LiMn2O4 ↔ Li0.5Mn2O4 + 0.5Li+ + 0.5 e- (1)
The above process repeats twice to give final lithiation/de-lithiation process as:
LiMn2O4 ↔ Mn2O4 + Li+ + e- (2)
Furthermore, it can be visualized that there is close proximity of peaks in each pair as
compared to sharp distinct peaks in the literature [18, 41-43]. Therefore two distinct peaks for
each anodic and cathodic can be can be viewed to be one as they nearly resembles to only
two capacitve redox peaks described in the literature [54]. The effect is more viable as seen
in the CVs at higher scan rates of 16 and 32 mV/s (fig. 7b). This gives an indication for fast
cyclic ability of energy system suggesting for ultrafast lithiation and de-lithiation process,
which is a prerequisite for a superior capacitive performance.
Figure 7. Cyclic voltammetry measurements for sample (a) S1, S2 and S3 at 5 mV/s and (b)
S1at different scan rates in 0.5M Li2SO4 electrolyte.
When the scan rate for CV was increased, the area under CV curve also gets
increased, which can be attributed for promising capacitive performance of as prepared
LiMn2O4 nanorods. However, the discharge current tends to vary during CV, so it's unfair to
predict capacitance using the CV curve. Specific capacitances C (F/g) for samples S1-S3
were calculated using galvanostatic charge/discharge measurements carried out in potential
range from 0.2 to 1.2 V according to [43]:
C = I ∆t / m ∆V (3)
Here, current (I) is in Ampere, discharge time (∆t) is in seconds, mass of the active material
(m) is in grams and applied potential range (∆V) is in volts. Initial galvanostatic
charge/discharge measurements for sample S1 at 0.5, 1.0, 1.5 and 2 A/g is shown in fig. 8a.
Specific capacitance (C), were calculated to be 144.5, 119.7, 111.5 and 98.7 F/g at current
densities of 0.5, 1.0, 1.5 and 2 A/g for sample S1. High-capacitance value observed can be
attributed to the large amount of charge accumulation at electrode/electrolyte interfaces
during lithiation/de-lithiation process as described above. Capacity retention after 2000
cycles was estimated for all the samples as displayed in fig. 8b. Capacity fading was observed
with increasing current density, which can be a usual characteristic of supercapacitors. Highly
stabilized capacitive performance has been encountered with a high retention capacity of
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97.3% after 2000 cycles for sample S1. This galvanostatically calculated capacitance using
discharge time could possibly be one of the very few reports and suggests the material to be
promising cathode for asymmetric supercapacitor [18, 41-43]. For sample S2 and S3, 86%
and 81% of capacity retention is observed, respectively (fig. 8b). In spite of possessing
similar phase and structure, these materials (S1-S3) vary in their prolonged cycling
behaviour. Morphological variation could be the viable reason. Sample S1 performed the best
followed by S2 and S3. Sample S1 possessed more confined and uniform morphologies
which helped it to exhibit very high surface area as discussed above followed by S2 and S3.
As a result sample S1 as electrode was able to interact well with the electrolyte when used
through shortening of diffusion length and enhanced surface activity. The study clearly
indicates that highly confined nanoscale structures are well suited for charge storage. First 20
cycles of galvanostatic charge-discharge profiles for sample S1 is presented in the inset fig.
8b to show a promising stability at initial cycling processes.
Figure 8. (a) Galvanostatic charge/discharge cycles at different current densities for S1 and
(b) Capacity retention versus cycle number at 2 A/g for S1, S2 and S3 with inset (b) first 20
cycles of Galvanostatic charge/discharge for S1 in 0.5M Li2SO4 electrolyte.
3.2.2 In KOH aqueous electrolyte with K3Fe(CN)6 as redox additive
In the above electrochemical analysis, two major drawbacks persist. First, being the low
capacity and the other being a very high discharge time due to its low current density. A
supercapacitor is known to deliver promising energy at relatively small time compared to
batteries. To achieve this, high charge storage property is expected at promisingly high
current density [55]. In account of this, we followed the same electrochemical analysis (the
three electrode system) with only change in the electrolyte under different potential window.
In advancement of our previous report [55], we used 3 M KOH with redox additive as 0.1 M
K3Fe(CN)6 to test the charge storage properties of as synthesized LiMn2O4 nanorods. Like the
previous case, here also close similarity is observed (fig. 9a) in CV patterns for all the
samples at 15mV/s in the potential window of -0.4 to 0.6V. This again confirms the close
proximity in phase and structure of as prepared samples. The cyclic voltammograms at
different scan rates of 5, 10, 15, 20, 25 and 30 mV/s for sample S1 are shown in fig. 9b. The
low scan rates are incorporated to account for the exact positions of redox peaks, which
normally disappear at higher scan rate. In the potential window of -0.4 to 0.6V, oxidation
(anodic) and reduction (cathodic) peaks can be seen approximately at 0.52 and 0.36 V,
respectively. Likely sharp redox peaks are observed at 5mV/s, which gradually smoothens at
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- K+) adsorption (4)
higher scan rates. This suggests for the pseudocapacitive property of the LiMn2O4 nanorods
[55]. These redox peaks attribute to the redox activities of the electrolyte. As mentioned in
the previous reports, the redox activity of electrolyte can be constituted to two different
species, the one being from KOH and the other, K3Fe(CN)6. However in this electrolyte
lithium ion movement is expected to be low but KOH electrolyte adds the redox kinetics in
addition to the above lithiation/delithiation process (eq.1-2) through two concurrent activities
[56, 57]:
Mn2O4 + K+ + e- ↔ (Mn2O4
Equation (4) corresponds to the attachments of K+ ions on the adsorbent surface (LiMn2O4
nanorods) without any chemical bonding relating non-faradaic activity. A simultaneous
faradaic activity is also feasible involving intercalation-de-intercalation of electrons (e- ) and
K+ ions into the active sites of LiMn2O4 nanorods as presented:
Mn2O4 + K+ + e- ↔ Mn2O3.OK (5)
The presence of redox additive K3Fe(CN)6 considerably adds up the redox activity by adding
the redox coupled molecule [Fe(CN)6]3−/[Fe(CN)6]4− [58]:
K3Fe(CN)6 + e- ↔ K4Fe(CN)6 (6)
Figure 9. Cyclic voltammetry measurements for sample (a) S1, S2 and S3 at 15 mV/s and (b)
S1at different scan rates in KOH/K3Fe(CN)6 electrolyte.
The galvanostatic charge-discharge profiles for 1st cycle at promisingly high current
densities of 30, 25, 20 and 15 A/g for sample S1 is displayed in fig. 10a. The specific
capacities are calculated in similar way following eq. 3. The calculated capacities are 653.5,
651.5, 543.4, and 303.75 F/g at respective current densities of 15, 20, 25 and 30 A/g. In
contrast, we observed inferior capacities in our previous reports of MnO2 as 643.5, 270 and
185 F/g at current densities of 15, 20 and 25 A/g under same condition [55]. MnO2
experiences comparable capacity at 15 A/g but considerable decrease in capacity at higher
current density of 20 and 25 A/g with respect to LiMn2O4. This can be attributed to the lack
of lithiation/de-lithiation processes in the former case. Likewise, the obtained capacities are
more promising than the reports of 164 F/g at 16 A/g, 106 F/g at 0.5 A/g, 96 F/g at 20 A/g for
MnO2 nanorods [59], MnO2/CNT composite [60] and MnO2 thin film [61] respectively.
Hence, a considerable enhancement in pseudo-capacitance is observed when the electrode is
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changed from α-MnO2 nanorods to LiMn2O4 nanorods. This clearly supports that the as
prepared lithiated manganese oxide (LiMn2O4) provides some extra redox activities in
conjugation with those from the electrolyte. Retention capacity was tested for 4000 cycles at
30 A/g (fig. 10b). Stable cycling of first 20 cycles for sample S1 is highlighted in inset fig.
10b. During the initial cycling all the samples behave very closely. Negligible decay in
capacity is observed for sample S1 compared to S2 and S3 upon prolong cycling. After 1000
cycles a noticeable decay is observed for sample S3 compared to S1 and S2. After 2000
cycles, the retention value for sample S2 also starts to show noticeable degradation in
capacity against S1. Sample S1 performs the best with 93% of capacity retention after 4000
cycles followed by S2 and S3 which stands at 74% and 68.4%, respectively. This matches
well with above analysis and gives weight-age to our assumption for the dependency of
electrochemical storage property on morphology of electrode material. We predicted very
high stability criteria for the electrode devoid of any rupture or pulverization in electrode
material. However, a small decay in capacity could be attributed to the etching of electrode
material due to improper coating. The study strongly recommends a considerable
enhancement in charge storage property for LiMn2O4 in redox additive, KOH/K3Fe(CN)6
electrolyte compared to aqueous Li2SO4 electrolyte.
Figure 10. (a) Galvanostatic charge/discharge cycles at different current densities for S1 and
(b) Capacity retention versus cycle number at 30 A/g for S1, S2 and S3 with inset (b) first 20
cycles of Galvanostatic charge/discharge for S1 in KOH/K3Fe(CN)6 electrolyte.
In supercapacitor more number of charge involvements is highly desirable for
enhanced charge storage property. Compared to our previous report [55], the extra reversible
charge activity relating lithiation/delithiation was absent and so a considerable less
capacitance was encountered. The capacity increases during 100-500 cycles by maximum of
120% and then decreases to stable value exhibiting an excellent retention capacity of 93%
(fig. 10b). This variation in retention capacity compared to the previous can be well attributed
to the redox activity of the K3Fe(CN)6. During the initial charging process more number of
Fe(II) converts to Fe(III) upon oxidation and during discharge process some of these Fe(III)
converted back to Fe(II). The conversion of Fe(III) to Fe(II) is less compared to the formation
of Fe(III) and so more number of charges (electrons) are available for redox activity, thereby,
enhancing the charge storage capacity. However, after prolong cycling (500 cycles approx.),
these charges are involved in reduction of Fe(III) to Fe(II) during discharge process and thus
there number starts decreasing which in turn decreases the capacitive behaviour. Anyhow,
during charging, again Fe(II) gets oxidized till a stage is reached, where the reversible
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conversion of Fe(II)↔Fe(III) attains equilibrium. This phenomenon helps to achieve a stable
capacitive behaviour and thus a promising electrode material can be predicted in the form of
LiMn2O4 nanorods under the redox added electrolyte. Acknowledging the complexity behind
the pseudo-capacitive mechanism, a future study is required.
4. Conclusions
An effective synthesis procedure was successfully developed to achieve ultrafine LiMn2O4
nanorods with no physical imperfections using as grown β-MnO2 nanorods. This included a
novel hydrothermal method to homogenously mix the precursors which finally resulted in the
lithiated nanorods of 10-80 nm diameters. BET method was effectively employed for surface
analysis to account for ultrafine growth of LiMn2O4 nanorods with high surface area of
88.294 m2/g. Ultrafine confined morphologies exhibited better electrochemical kinetics and
reveals that charge storage capacity is dependent on morphology of the electrode material.
Confined morphologies could facilitate the charge accumulation at electrode/electrolyte
interfaces by providing short diffusion path. Furthermore, LiMn2O4 nanorods showed
considerably better performance in KOH with K3Fe(CN)6 as electrolyte compared to aqueous
Li2SO4 electrolyte with high pseudo-capacitance of 653.5 F/g at 15 A/g and stable capacity
retention of 93% after 4000 cycles. It mainly stems from the enhanced redox activities of
redox couple [Fe(CN)6]3−/[Fe(CN)6]4− and K+ ions of the electrolyte. This combination of
electrode and electrolyte may prove to be beneficial for developing next generation of
supercapacitors.
Acknowledgements
This work was supported by DST Nano Mission, Govt. of India, via Project No. SR/NM/NS-
1062/2012. The author T. Maiyalagan thanks the Department of Science and Technology-
Science and Engineering Research Board [DST-SERB; No. ECR/2016/002025], India for
financial support through Early Career Research Award.
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1705.06234 | 1 | 1705 | 2017-05-17T16:12:45 | A charging method for electric vehicle using multi battery series mode | [
"physics.app-ph"
] | A charging method for electric vehicle using multi battery series mode which consisted of the following steps was introduced: the battery series is firstly charged at a constant power with a charging current of I1. When the terminal voltage over the battery series has reached the 1st threshold voltage, the charging current will reduce to I2 and the power remains constant. When the terminal voltage over the battery series has reached the 2nd threshold voltage, the charging current will reduce to I3 and the power remains constant (the 2nd threshold voltage is larger than 1st threshold voltage). When the terminal voltage over the battery series has reached the 3rd threshold voltage, which is the rated voltage of the battery series, the charging process is completed (3rd threshold voltage is larger than 2nd threshold voltage). Contents in this paper provide a charging method for electric vehicles using multi battery series mode with high charging efficiency and security level. | physics.app-ph | physics | A charging method for electric vehicle using multi
battery series mode
School of Electrical Information, Shanghai Dianji University, Shanghai 200240, China
*Corresponding author: [email protected]
Hong Liu*, Yuan Ren, Liangxiao Ye
Abstract-A charging method for electric vehicle using multi
battery series mode which consisted of the following steps was
introduced: the battery series is firstly charged at a constant
power with a charging current of I1. When the terminal voltage
over the battery series has reached the 1st threshold voltage, the
charging current will reduce to I2 and the power remains
constant. When the terminal voltage over the battery series has
reached the 2nd threshold voltage, the charging current will
reduce to I3 and the power remains constant (the 2nd threshold
voltage is larger than 1st threshold voltage). When the terminal
voltage over the battery series has reached the 3rd threshold
voltage, which is the rated voltage of the battery series, the
charging process is completed (3rd threshold voltage is larger
than 2nd threshold voltage). Contents in this paper provide a
charging method for electric vehicles using multi battery series
mode with high charging efficiency and security level.
Keywords-charging device; battery mode; threshold voltage
I. INTRODUCTION
Compared with traditional motor vehicles powered by fuel,
electric vehicle is advantageous in energy saving, emission
reduction and environmental protection. As a result, it is
becoming more and more important with more applications in
transportation [1-8]. Up to now, most of the charging services
of electric vehicles in social communities are realized by using
appointed battery replacement managed by the State Grid.
However, during the last couple of years, large scale electric
vehicle rental services and bidding projects of charging station
construction have been started in metropolitans such as
Shanghai and Beijing. Besides, self-service electric vehicle
charging posts have been constructed in a large scale around
residential communities, public parking lots and business
districts in large and medium-sized cities all over China.
Development in all these aspects indicates that the electric
vehicle charging services are becoming multi-functional, multi-
zone and intelligent on the basis of traditional battery
replacement service [9-15]. Therefore, the popularization and
application of electric vehicle charging service is inevitably
related to the construction and completion of the relevant
charging infrastructures, which imposes higher requirements
on the use and function of the electric vehicle charging
facilities [16-21]. Related literatures showed that users would
like the vehicles to be more intelligent, allowing them to select
among functions modules such as the charging duration,
charging speed mode and scheduled charging, which facilitates
the use of vehicles under different conditions [22-24].
The selection of charging mode has equal importance for
battery distribution management and charging security [25].
For example, some users rely on direct current (DC) source to
finish vehicle charging process within a short time. However,
the relatively high charging current from DC source will
reduce the lifespan of batteries to a large extent. Hence, this
charging method can only serve as an emergent backup plan.
Researchers both at home and abroad found that there
generally exist problems such as low energy conversion
efficiency, instauration of battery when fully charged, battery
heating and deformation, among which the low charging
efficiency has the most obvious effect [26-28]. It reduces the
mileage of electric vehicles, causes frequent charging in a short
time and shortens the lifespan of batteries. In order to solve the
above problem, Li et al. have done deep investigations into the
charging management mode of the batteries in electric vehicles
and the design of control system which balances the load
current was found to be the key factor [29]. Thanks to their
charging model proposed in their latest patent [29], based on
his method, we will further present in this paper the design of a
corresponding control system or facility for battery charge
control, which will be greatly important in high current
charging with DC source. In addition, the control design should
provide a
secured operation
environment with high energy utilization efficiency for electric
vehicle users.
sustainable and highly
Therefore, in order to guarantee the lifespan, security and
endurance of the batteries in electric vehicles and improve the
energy conversion efficiency during battery charge process, it
is imperative to establish a charging method for multi battery
series which is complete, secure and easy to use. The
investigation of this method is of great importance to reduce
electric energy loss, energy saving, low carbon emission and
environment protection. As a consequence, our paper intents to
give the detailed description for the proposed and further carry
out experimental results to support our discoveries.
II. THE FUNDAMENTAL BASIS FOR CHARGING MULTI
BATTERY SERIES
In order to overcome the shortcoming of the current electric
vehicle charging method using multi battery series mode, such
as low charging efficiency and low level security, this paper
proposes a charging method with high charging efficiency and
high level security.
The technical procedure for solving the problem mentioned
should be specific, in general. According to the newest model
proposed in Li's patent [29], the charging method for electric
vehicles using multi battery series generally consists of the
following steps: firstly, the battery series is charged at a
constant power with a charging current of I1. Afterwards, when
the terminal voltage over the battery series reaches the 1st
threshold voltage, the charging current will reduce to I2 and the
power remains as a constant. When the terminal voltage over
the battery series reaches the 2nd threshold voltage, the
charging current will reduce to I3 and the power remains as
another constant (the 2nd threshold voltage is larger than 1st
threshold voltage). When the terminal voltage over the battery
series reaches the 3rd threshold voltage, which is the rated
voltage of the battery series, the charging process is completed
(the 3rd threshold voltage is larger than the 2nd threshold
voltage).
One step further, the charging controller operated in
dynamic control mode is able to carry out real-time control of
the input current and terminal voltage of the battery series. The
proposed method is advantageous in that the whole charging
process is divided into several individual steps according to the
relation between charging voltage and input current, resulting
in high charging efficiency. Besides, the security of this
charging method can be verified using real-time simulations.
III. THE ADVANTAGES OF THE PROPOSED METHOD WITH HIGH
CHARGING EFFICIENCY AND LEVEL SECURITY
According to Figure 1 to 4, the proposed charging method
for electric vehicles using multi battery series consists of
following elements: the battery series is firstly charged at a
constant power with a charging current of I1. When the
terminal voltage over the battery series reaches the 1st
threshold voltage, the charging current will reduce to I2 and the
power remains as a constant. When the terminal voltage over
the battery series reaches the 2nd threshold voltage, the
charging current will reduce to I3 and the power remains as
another constant (the 2nd threshold voltage is larger than the
1st threshold voltage). When the terminal voltage over the
battery series reaches the 3rd threshold voltage, which is the
rated voltage of the battery series, the charging process is
completed (the 3rd threshold voltage is larger than the 2nd
threshold voltage).
Fig. 1 The battery terminal voltage varying with time when the external current
is input into the battery series in the electric vehicle.
One step further, the charging controller operated in
dynamic control mode is able to carry out real-time control of
the input current and terminal voltage of the battery series.
Figure 2 is the schematic diagram of the charging system of
the multi battery series in the electric vehicle. As shown in
Figure 2, the charging facility consists of battery charge
controller (10), battery charger (20) and battery series (30). The
main function of battery charge controller is to inspect the
operation status of the battery series and output control signal
to adjust the charging mode of battery series (30). In this paper,
we adopt the charging method devised by Li et al. from their
patent [29] where the main function of battery charger is to
convert the external AC input into DC output. Besides, when
the switch S is "ON", a closed loop of the DC current which is
output by the battery charger can be formed, realizing the
charging of battery series.
Fig. 2 The schematic diagram of the charging system of the multi battery series
in the electric vehicle.
Subsequently, with the help of Figure 2 to 4, we will give
detailed implementation of the multi battery series charging
method for electric vehicles proposed in this section. Figure 3
is the schematic flow chart of charging steps of the multi
battery series in the electric vehicle. Figure 4 is the battery
terminal voltage varying with time and can be obtained from
onsite experiments. When an electric vehicle breaks down due
to battery energy depletion, the user would connect the
charging plug to AC source and turn on the switch S to form a
closed loop, in order to charge the battery series. During the
process, the charging process s20 (as shown in Figure 3) will
require the battery series charge controller (10) to identify the
initial SOC of the battery series, and send control signal to
battery charger (20) to instruct the system to charge the battery
series (30).
Similarly, with the help of Figure 2 to 4, we will give
detailed implementation of the multi battery series charging
method for electric vehicles, which was proposed in this paper.
Figure 3 is the schematic flow chart of charging steps of the
multi battery series in the electric vehicle. Figure 4 is the
battery terminal voltage varying with time which can be
obtained from onsite experiments. When an electric vehicle
breaks down due to battery energy depletion, the user could
connect the charging plug to AC source and turn on switch S to
form a closed loop in order to charge the battery series. During
the process, the charging process s20 (as shown in Figure 3)
will require the battery series charge controller (10) to identify
the initial SOC of the battery series, and send control signal to
battery charger (20) to instruct the system to charge the battery
series (30).
Particularly, the 3 phase AC current input by user can be
converted into DC output using the current rectifier (21) in the
battery charger (20). During the charging process s10, the
charging power maintains at 5.4 kW by the output current.
Meanwhile, the charging process s20 requires real-time
monitoring of the terminal voltage of the battery series by the
battery charging controller (10).
When the terminal voltage of each sub-unit of the battery
series reaches 14.7 V or the voltage of any sub-unit reaches
15.0 V (denoted as the charging process s30), the battery
charging controller (10) will send charging command to battery
charger (20), requiring the battery charger to charge the battery
series with 11 A DC. The change of the terminal voltage of the
battery series during this charging step is indicated by the
waveform in Figure 4. When the charge process exceeds s40,
the terminal voltage of the battery series will reach 14.8 V or
any sub-unit of the battery series will reach 15.1 V, command
will be sent again from battery charge controller (10) to battery
charger (20). Battery charger will then reduce the charging
current to 7.6 A, which is shown by the charging process s50 in
Fig. 3 The schematic flow chart of charging steps of the multi battery series in
the electric vehicle.
Figure 3.
Fig. 4 The battery terminal voltage varying with time, the corresponding results
are obtained from onsite experiments.
When the terminal voltage of each sub-unit of the battery
series reaches 14.7 V or the voltage of any sub-unit reaches
15.0 V (denoted as the charging process s30), the battery
charging controller (10) will send charging command to battery
charger (20), requiring the battery charger to charge the battery
series with 11 A DC. The change of the terminal voltage of the
battery series during this charging step is indicated by the
waveform in Figure 4. When the charge process exceeds s40,
the terminal voltage of the battery series will reach 14.8 V or
any sub-unit of the battery series will reach 15.1 V, command
will be sent again from battery charge controller (10) to battery
charger (20). Battery charger will then reduce the charging
current to 7.6 A, which is shown by the charging process s50 in
Figure 3.
Particularly, the above charging process of the battery
series would repeat for several times [29], which can
effectively save energy losses, hence we use the model of Li's
patent in our design procedures. To verify Li's such theorem,
we show the comparison results in Figure 3, when the terminal
voltage of the battery series reaches 14.8 V or the voltage of its
sub-unit reaches 15.1 V for the first time, the battery charger
will reduce the charging current to 7.6 A DC, which is the
charging process s60 in Figure 3. After s60, the charge
controller (10) will again send command to battery charger
(20), which is the charging process s80 in Figure 3. The battery
charger will further reduce the current to 3.8 A or 2 A to charge
the battery series. These two charging processes, s70 and s90
s90 is completed, if the terminal voltage of the battery series
(30) further increases to 15.8 V or its sub-unit voltage
increases to 16.1 V, the charge controller (10) will send new
command to battery charger. The battery charger will then
charge the battery series with a constant input voltage of 15.8
V, which is shown by s100 and s110 in Figure 3.
After charging process s100 has been executed for one
hour, if the charging current of battery series (30) is less than
0.2 A or the sub-unit voltage is over 16.3 V, the charge
controller (10) will send termination command to battery
charger, which will stop inputting charging voltage into battery
series and stop the whole charging process, as indicated by the
theorem in [29].
for charging battery series
This method proposes a novel approach for charging
battery series in electric vehicles based on multi-steps. It is
advantageous in reducing the effect of mutual interference
between battery series sub-units to the maximum extent and
achieving a battery energy usage efficiency of 80%.
Specifically, the whole process of obtaining external electric
energy
is completely by
implementing the charge controller. The charge controller
carries out real-time control of input current and terminal
voltage of the battery series in electric vehicles via dynamic
control mode, which avoids damage to the batteries due to
over-charging and high-speed charging. Our proposed method
involves part of the electric vehicle charging technology,
specifically involves the charging method of electric vehicles
with multi battery series mode.
IV. CONCLUSION
We propose a charging method for electric vehicles using
multi battery series mode, which is characterized by the
following steps: firstly, the battery series is charged at a
constant power with a charging current of I1; when the
terminal voltage over the battery series has reached the 1st
threshold voltage, the charging current will reduce to I2 and
the power remains constant; when the terminal voltage over
the battery series has reached the 2nd threshold voltage, the
charging current will reduce to I3 and the power remains
constant (the 2nd threshold voltage is larger than the 1st
threshold voltage); when the terminal voltage over the battery
series has reached the 3rd threshold voltage, which is the rated
voltage of the battery series, the charging process is completed
(the 3rd threshold voltage is larger than the 2nd threshold
voltage) The charging method is also characterized in the
aspect that the charging controller operated in dynamic control
mode is able to carry out real-time control of the input current
and terminal voltage of the battery series. The terminal voltage
over the battery series will gradually increase before it reaches
the 3rd threshold voltage and the charge process is terminated
by the charging controller.
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|
1807.09922 | 1 | 1807 | 2018-07-26T02:10:16 | Reversal Time of Jump-Noise Dynamics for Large Nucleation | [
"physics.app-ph"
] | The jump-noise is a phenomenological stochastic process used to model the thermal fluctuation of magnetization in nanomagnets. In this work, the large nucleation regime of jump-noise dynamics is studied, and its reversal time is characterized from Monte Carlo simulations and analysis. Results show that the reversal time of jump-noise dynamics for large nucleation is asymptotically equal to the time constant associated with a single jump-noise scattering event from the energy minimum in the energy landscape of the magnetization. The reversal time for large nucleation depends linearly on the height of the energy barrier for large barriers. The significance of the large nucleation regime of jump-noise dynamics to phenomenologically explain the magnetoelectric switching of antiferromagnetic order parameter is also prospected. | physics.app-ph | physics | Reversal Time of Jump-Noise Dynamics for Large Nucleation
1Department of Electrical and Computer Engineering, New York University, Brooklyn, NY 11201, USA
Arun Parthasarathy1 and Shaloo Rakheja1
The jump-noise is a phenomenological stochastic process used to model the thermal fluctuation of magnetization in nanomagnets.
In this work, the large nucleation regime of jump-noise dynamics is studied, and its reversal time is characterized from Monte Carlo
simulations and analysis. Results show that the reversal time of jump-noise dynamics for large nucleation is asymptotically equal
to the time constant associated with a single jump-noise scattering event from the energy minimum in the energy landscape of the
magnetization. The reversal time for large nucleation depends linearly on the height of the energy barrier for large barriers. The
significance of the large nucleation regime of jump-noise dynamics to phenomenologically explain the magnetoelectric switching of
antiferromagnetic order parameter is also prospected.
Index Terms -- Jump-noise, large nucleation, magnetization reversal
I. INTRODUCTION
T HE reversal time of magnetization is the time constant as-
sociated with the longitudinal relaxation of magnetization
in nanomagnets under the influence of thermal effects, also
known as the superparamagnetic or N´eel relaxation time [1].
The reversal time provides information on the retention time
for reading or the switching speed for writing in the context of
a magnetic memory or a logic device [2], [3]. Estimating the
reversal time correctly is crucial for steady miniaturization of
such devices against the onset of thermal instability in smaller
volumes.
The jump-noise [4] is a phenomenological stochastic pro-
cess used to model the thermal fluctuation of magnetization
in nanomagnets. Unlike the classical N´eel-Brown thermal
activation theory [5], [6] based on coherent rotation of mag-
netization via Landau-Lifshitz-Gilbert dynamics [7], [8], the
magnetization reversal via jump-noise dynamics [9] represents
macroscopic tunneling of magnetization [10], a low tempera-
ture (10 mK -- 10 K) escape rate phenomenon, without evoking
quantum mechanics [11].
Besides being used to capture thermal effects in magnetiza-
tion dynamics, the jump-noise could also model the magne-
toelectric (ME) switching of antiferromagnetic (AFM) order
parameter [12] -- [14], the emerging field of antiferromagnetic
spintronics [15]. In AFMs such as Cr2O3, the ME energy
density required for domain switching is nearly four orders
of magnitude smaller than the uniaxial anisotropy energy
barrier [13]. In such materials, classical thermal activation
over the energy barrier, which depends exponentially on the
barrier height, cannot explain the broad range of fast switching
speeds reported in the literature from microsecond [16] to few
tens of nanosecond [14] to few tens of picosecond [17], [18].
The jump-noise in the large nucleation regime is expected
to phenomenologically address this anomalous switching by
virtue of it being a first-order phase transition model nucleated
by fluctuations [19]. Our prior work shows that the dynamics
of jump-noise averages to the classical
theory when the
nucleation is small [9]. Hence, the case of small nucleation
is only briefly presented for the sake of completeness.
Corresponding author: A. Parthasarathy (email: [email protected]).
In this paper, the jump-noise and the large nucleation regime
are first defined (Sec. II). Then, the reversal time extracted
from Monte Carlo simulations of jump-noise dynamics in
the large nucleation regime (Sec. III) is compared with that
obtained from analysis (Sec. IV).
II. THE JUMP-NOISE
For a uniformly magnetized nanomagnet with magnetization
M of magnitude Ms, the state variable is defined by the
dimensionless quantity m = M/Ms. The jump-noise is char-
acterized by the transition probability rate function S between
any two states (m1, m2) on the phase space (cid:107)m(cid:107) = 1, which
is given by the formula [4]
S(m1,m2) = B exp
(cid:8)g(m1) − g(m2)(cid:9)(cid:21)
− 1
2σ2(cid:107)m1 − m2(cid:107)2+
µ0M 2
kT
;
eb0 =
eb0
2
s V
,
(1)
(cid:20)
where B and σ are the nucleation parameters; g is the magnetic
free energy density; and eb0 is the energy barrier parameter,
wherein µ0 is the vacuum permeability, V is the volume of
the nanomagnet, and kT is the thermal energy. From Eq. (1),
the scattering rate λ from a state m follows
λ(m) =
(cid:107)m(cid:48)(cid:107)=1
S(m, m(cid:48)) d2m(cid:48) .
(2)
(cid:73)
The probability density function f of a jump to occur from
mi to mi+1 at time ti is written as
f (mi, mi+1mi) =
S(mi, mi+1)
(cid:18)
λ(mi)
(cid:90) ti+τ
.
(cid:19)
(3)
(4)
The statistic of the jump instants ti is given as
Pr(ti+1 − ti > τ ) = exp
−
λ(m(t))dt
.
ti
Equations (1) -- (4) describe the jump-noise statistics. The
nucleation regime is decided by the parameter σ. A small
nucleation is such that the transition probability rate from a
state is appreciable only over an infinitesimal distance from
the state, implying that σ (cid:28) 1. A large nucleation means that
8
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0
2
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6
2
]
h
p
-
p
p
a
.
s
c
i
s
y
h
p
[
1
v
2
2
9
9
0
.
7
0
8
1
:
v
i
X
r
a
2
Fig. 1. Equilibrium distribution of θ for uniaxial anisotropy; eb0 = 10. The
histogram of θ obtained from Monte Carlo simulation of jump-noise dynamics
eventually approaches Boltzmann distribution.
Fig. 2. Reversal time of magnetization for uniaxial anisotropy for large
nucleation; eb0 = 10, B = 1. The reversal time obtained from Eq. (7)
and from Monte Carlo simulations asymptotically converge for large σ.
states which are farthest apart on the phase space have a non-
negligible transition probability rate. On the unit sphere phase
space, the transition probability rate between diametrically
opposite states, if energetically favorable, is at least equal to
exp(cid:0)−2/σ2(cid:1). Therefore, σ ∼ O(1) for large nucleation.
III. EXTRACTION OF REVERSAL TIME
The reversal time of magnetization is extracted by perform-
ing Monte Carlo simulations on the time evolution of jump-
noise induced nucleation in nanomagnets. The nanomagnets
possess only uniaxial anisotropy, and there is no external
applied field. The simulations are implemented in MATLAB
with the help of Parallel Computing Toolbox on a server with
20-core CPU @ 2.3 GHz and 512 GB memory. The numerical
methods are presented in Ref. [9], [20].
time t = 0, and let
The state variable m is represented by spherical coordi-
nates (θ, φ) such that mx = sin θ cos φ, my = sin θ sin φ,
mz = cos θ. We consider 1000 samples aligned along the
same lowest energy state mz = −1, without loss of generality,
at
the ensemble evolve with time
until the ensemble equilibrates to Boltzmann distribution as
shown in Fig. 1. The energy density for uniaxial anisotropy
is g(θ) = (1/2) sin2 θ, and the corresponding Boltzmann
distribution is weq(θ) = (1/Z) exp[−eb0g(θ)] sin θ, where Z
is the normalization constant.
The reversal time τ characterizes the longitudinal relaxation
of absolute ensemble mean of the state variable as
mz(t) ≈ e−t/τ ;
t (cid:29) τ.
(5)
So, τ can be estimated from the asymptotic value of τ (t) =
−t/ ln[mz] from simulations. The reversal time extracted this
way will have some error because a finite sample size of 1000
could only allow precision upto three significant digits.
IV. RESULTS AND DISCUSSION
For very large nucleation, that is σ (cid:29) 1, the first term in
the transition probability rate (1) vanishes, so that
(cid:104) eb0
2
(cid:8)g(m1) − g(m2)(cid:9)(cid:105)
.
(6)
S(m1, m2) (cid:39) B exp
The transition probability between two equivalent energy wells
in this case is symmetric about the location of the energy
barrier, so that the average distance of jumps occurs at the
energy maximum. As a result, the critical process of relaxation
between two equivalent energy wells against the energy barrier
happens in a single random process.
The time constant of a process is associated with the slowest
mode of relaxation. From Eq. (6), it is evident that transitions
originating from the energy minimum have the lowest escape
rate, which is expected from statistcal mechanics. Therefore,
the longitudinal relaxation of magnetization for very large nu-
cleation is characterized by jump-noise scattering process from
the energy minimum. The reversal time is simply reciprocal of
the scattering rate (2) from the energy minimum or formally
τ (cid:39) 1
λ0
The reversal
, where λ0 = λ[m = arg min g(m)].
(7)
time obtained from Eq. (7) asymptotically
converges to the reversal time extracted from Monte Carlo
simulations for large σ as shown in Fig. 2. For larger values
of σ, the statistics of the jump-noise process reduces to Eq. (6)
which is independent of σ, so the reversal time saturates. At
σ ∼ 1, there is a sharp rise in the reversal time which could
be used to model critical phenomena.
The reversal time for large nucleation varies linearly with
the energy barrier for large eb0 as shown in Fig 3. When
eb0 (cid:29) 1, the transition probability rate (6) behaves like a
Dirac delta function centered at the energy minimum, and the
normalization of the Dirac delta yields a linear eb0 term in the
expression of the reversal time (7). For eb0 (cid:28) 1, the transition
probability rate (6) is uniformly equal to B on the phase space,
and the reversal time τ = 1/(4πB).
In contrast, for the case for small nucleation, the jump-noise
dynamics averages to the classical N´eel-Brown theory [9]. As
a result, the reversal time varies exponentially with σ as shown
in Fig. 4, as well as exponentially with the energy barrier [1].
In this regard, the jump-noise dynamics for large nucleation
exhibits a unique feature.
As mentioned in the introduction, the classical N´eel-Brown
theory cannot explain the fast switching speeds of AFM
domain via ME effect. We theorize that
the critical phe-
nomenon of ME switching can be explained by modeling
3
ACKNOWLEDGMENT
This work was supported in part by the Semiconduc-
tor Research Corporation (SRC) and the National Science
Foundation (NSF) through ECCS 1740136. S. Rakheja also
acknowledges the funding support from the MRSEC Program
of the National Science Foundation under Award Number
DMR-1420073.
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[8] T. L. Gilbert, "A phenomenological theory of damping in ferromagnetic
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(1955)" is only an abstract and its pdf pages are not hosted.
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[10] J. Tejada, X. Zhang, and E. M. Chudnovsky, "Quantum relaxation in
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noise process-driven magnetization dynamics and random switching of
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[12] T. Martin and J. Anderson, "Antiferromagnetic domain switching in
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1966.
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Tretiakov, "Magnetoelectric domain wall dynamics and its implications
for magnetoelectric memory," Applied Physics Letters, vol. 108, no. 13,
p. 132403, 2016.
[14] T. Kosub, M. Kopte, R. Huhne, P. Appel, B. Shields, P. Maletinsky,
R. Hubner, M. O. Liedke, J. Fassbender, O. G. Schmidt et al., "Purely
antiferromagnetic magnetoelectric random access memory," Nature com-
munications, vol. 8, p. 13985, 2017.
[15] V. Baltz, A. Manchon, M. Tsoi, T. Moriyama, T. Ono, and
Y. Tserkovnyak, "Antiferromagnetic spintronics," Reviews of Modern
Physics, vol. 90, no. 1, p. 015005, 2018.
[16] K. Toyoki, Y. Shiratsuchi, A. Kobane, C. Mitsumata, Y. Kotani, T. Naka-
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[17] S. Manipatruni, D. E. Nikonov, R. Ramesh, H. Li, and I. A. Young,
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[18] D. E. Nikonov and I. A. Young, "Benchmarking spintronic logic de-
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[20] A. Lee, Z. Liu, C. Serpico, G. Bertotti, and I. Mayergoyz, "Monte carlo
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Journal of Applied Physics, vol. 111, no. 7, p. 07D115, 2012.
Fig. 3. Reversal time of magnetization for uniaxial anisotropy for large
nucleation; σ = 100, B = 1. The reversal time varies linearly with the
energy barrier for large eb0 and saturates to τ = 1/(4πB) for small eb0.
Fig. 4. Reversal time of magnetization for uniaxial anisotropy for small
nucleation; eb0 = 10, B = 1. The reversal time obtained from the classical
N´eel-Brown theory and from Monte Carlo simulations converge for small σ.
See Ref. [9] for details on how N´eel-Brown theory's solution was obtained.
the nucleation parameter σ as a function of the ME energy
density or the product of the electric and magnetic fields.
When the field product is below the threshold, σ and the
nucleation should be small, and as a result the reversal is
probabilistically suppressed because of the large energy barrier
due to anisotropy. At the threshold field product, σ ∼ O(1)
and the nucleation is large; consequently the reversal is more
favorable, despite the large barrier.
V. CONCLUSION
The reversal
time of jump-noise induced magnetization
dynamics for large nucleation is asymptotically equal to the
time constant associated with a single scattering event from
the energy minimum. The reversal time for large nucleation
depends linearly on the energy barrier for large barriers. This
is in stark contrast with the classical N´eel-Brown thermal
activation theory, where the reversal occurs coherently over
the energy barrier in infinitesimally many steps, and shows
exponential dependence on the energy barrier. In future work,
the large nucleation regime of jump-noise dynamics will
be used to phenomenologically model
the magnetoelectric
switching of antiferromagnetic order parameter, an otherwise
impossible phenomenon to explain classically.
|
1906.04815 | 1 | 1906 | 2019-06-11T20:50:30 | Topological modes in radiofrequency resonator arrays | [
"physics.app-ph",
"cond-mat.mes-hall"
] | Topological properties of solid states have sparked considerable recent interest due to their importance in the physics of lattices with a non-trivial basis and their potential in the design of novel materials. Here we describe an experimental and an accompanying numerical toolbox to create and analyze topological states in coupled radiofrequency resonator arrays. The arrays are coupled harmonic oscillator systems that are very easily constructed, offer a variety of geometric configurations, and whose eigenfunctions and eigenvalues are amenable to detailed analysis. These systems offer well defined analogs to coupled oscillator systems in general in that they are characterized by resonances whose frequency spectra depend on the individual resonators, the interactions between them, and the geometric and topological symmetries and boundary conditions. In particular, we describe an experimental analog of a small one-dimensional system, with excellent agreement with theory. The numerical part of the toolbox allows for simulations of larger mesoscopic systems with a semi-continuous band structure, in which all resonators still exhibit individual signatures. Systematic parameter variation yields an astonishing richness of band structures in this simple linear system, allowing for further explorations into novel phenomena of topological modes. | physics.app-ph | physics | Voss & Ballon, Topological modes in RF resonators
1
Topological modes in radiofrequency resonator arrays
Henning U. Voss & Douglas J. Ballon
Abstract -- Topological properties of solid states have sparked considerable recent interest due to their importance in
the physics of lattices with a non-trivial basis and their potential in the design of novel materials. Here we describe an
experimental and an accompanying numerical toolbox to create and analyze topological states in coupled
radiofrequency resonator arrays. The arrays are coupled harmonic oscillator systems that are very easily constructed,
offer a variety of geometric configurations, and whose eigenfunctions and eigenvalues are amenable to detailed
analysis. These systems offer well defined analogs to coupled oscillator systems in general in that they are characterized
by resonances whose frequency spectra depend on the individual resonators, the interactions between them, and the
geometric and topological symmetries and boundary conditions. In particular, we describe an experimental analog of
a small one-dimensional system, with excellent agreement with theory. The numerical part of the toolbox allows for
simulations of larger mesoscopic systems with a semi-continuous band structure, in which all resonators still exhibit
individual signatures. Systematic parameter variation yields an astonishing richness of band structures in this simple
linear system, allowing for further explorations into novel phenomena of topological modes.
Key words -- Topological modes, radiofrequency resonators, edge modes, magnetic resonance imaging, sensors
I. TOPOLOGICAL MODES
The behavior of periodic physical systems has long been of interest in physics and engineering [1] and
encompasses a very broad range of phenomena. The traditional approach to solutions of these systems has
been to identify the relevant Hamiltonian and propose analytical solutions based upon an ansatz that yields a
dispersion relation for the eigenvalues. This paradigm has been extremely successful at identifying bulk
modes, involving excitations of entire lattices of particles or elements that comprise the system. More
recently, it was observed that additional modes of excitation involving only edges or surfaces of bulk systems
were best classified not by the specific nature of the physical interaction between the elements, but by their
overall topological and geometric configurations. For example, Apigo et al. [2] have demonstrated that
topological modes can be quite generally created by patterning of resonators, and that these modes are
independent of the structure of the resonators and the details of the couplings. This discovery has not only
led to observations of new properties of periodic systems observed in nature, but also to new materials in the
quantum and classical regimes. Many of these systems are relatively simple, and include chains of mass-
spring oscillators [3], magnetically coupled spinners [2], plasmonic nanoparticles [4, 5], dielectric resonator
chains [6, 7], planar metasurface architectures [8], microwave arrays [9], and acoustic systems [10].
Radiofrequency resonator arrays offer intriguing possibilities for the creation and study of topological modes
due not only to the number of geometries and topologies that can be easily realized, but also because they are
based upon convenient, readily fabricated and manipulated substrates that can be easily translated into
working devices at a range of length scales [6, 7, 9, 11-16]. Perhaps the most common application of bulk
modes of radiofrequency resonators is in medical magnetic resonance imaging [17].
The purpose of the present work is to demonstrate that radiofrequency resonator arrays can be constructed to
exhibit topological modes through a simple variation in either coupling or single element parameters, and
that an associated numerical toolbox can be constructed for prediction and analysis of the resonators based
upon elementary electromagnetic circuit principles. When formulated this way, the problem is dependent
upon the structure and symmetries inherent in the matrices defining the parameter space, which are a direct
Voss & Ballon, Topological modes in RF resonators
2
consequence of the topology and geometry of the system. There is complete freedom to specify a system
within this computational framework, and incorporation of traditional and exotic boundary conditions,
lattices with non-trivial unit cells, impurities, or defects is straightforward, facilitating rapid evaluation and
prototyping as well as pathways for discovery. The experimental setup for analyzing the arrays is exceedingly
simple, consisting only of a network analyzer and S-parameter test set.
II. METHODS
As an example, we consider one of the simplest systems that exhibits topological modes, namely a one-
dimensional array of inductively coupled radiofrequency (RF) resonators. Figure 1 shows an example of a
14-element resonator array. The red element to the left is the driving element, fed by a sinusoidally time-
varying signal from a network analyzer, which sweeps through 90 MHz centered at 210 MHz. The blue and
yellow elements of the array are LC resonators with different base frequencies, which can be tuned by the
trim capacitors visible on top of the elements. The base frequencies are the resonance frequencies of the
isolated, uncoupled, elements. The blue and yellow elements have been tuned to a base frequency of 200
MHz and 220 MHz, respectively. The display shows the measured absolute value of the S11 input port voltage
reflection coefficient versus frequency, exhibiting a spectrum consisting of several resonances. In the
following, the physical properties of RF arrays like this one are described in terms of resonance spectra and
currents in the individual RF elements.
Figure 1: A one-dimensional inductively coupled RF resonator array. It consists of a driving element (red) and LC
resonator elements (blue and yellow) with different base frequencies, as indicated. The LC elements consist of copper
tape mounted on plastic building blocks and a high-precision tunable capacitor visible on top of each element.
Voss & Ballon, Topological modes in RF resonators
3
Kirchhoff equations of the coupled array read
A. System equations
We restrict ourselves to arrays of N inductively coupled LC resonators with identical geometries, i.e.,
identical inductances Ln = L and resistances Rn = R (n = 1…N). The mutual inductances between array
elements n and n+1 are Mn = κn L, where κn denotes the coupling coefficient between array elements n and
n+1, and there are N-1 couplings. The κn are dimensionless numbers with a range [0, 1] and depend on the
distances between resonators. The capacitances Cn can be individually set to different values. In order to
create a steady state with nontrivial modes despite the usually inevitable dissipation, the array is driven by
external voltages Vn. These are assumed to be sinusoidal and with zero phase offset to the voltages in the
driven elements. Only the non-radiative, or near-field regime will be treated. That is, we will assume that the
electromagnetic wavelength is large compared to the linear dimensions of the network. With the assumption
� 1𝑖𝑖𝑖𝑖𝑖𝑖𝑛𝑛+𝑅𝑅 � 𝐼𝐼𝑛𝑛+𝑖𝑖𝑖𝑖𝑖𝑖(𝐼𝐼𝑛𝑛+𝜅𝜅𝑛𝑛−1𝐼𝐼𝑛𝑛−1+𝜅𝜅𝑛𝑛𝐼𝐼𝑛𝑛+1)=𝑉𝑉𝑛𝑛 .
of only nearest-neighbor coupling and the impedance of each isolated element given by 𝑖𝑖𝑖𝑖𝑖𝑖+ 1𝑖𝑖𝑖𝑖𝑖𝑖𝑛𝑛+𝑅𝑅, the
with 𝑛𝑛=1…𝑁𝑁 and 𝐼𝐼0 = 𝐼𝐼𝑁𝑁+1= 𝜅𝜅0=𝜅𝜅𝑁𝑁=0, corresponding to Dirichlet, or fixed-edge boundary
elements 𝑍𝑍𝑛𝑛𝑛𝑛= 1𝑖𝑖𝑖𝑖𝑖𝑖𝑛𝑛+𝑅𝑅. The matrix M contains the magnetic components of the system and is constant
conditions. For the more general case of non-local couplings, which can be important in experimental
realizations, it is advantageous to rewrite the Kirchhoff equations in matrix notation [18, 19] as
The matrix Z contains the electric components and explicitly depends on frequency. It is diagonal with
with respect to frequency. Its diagonal elements are L. Depending on the number of array elements involved
in the coupling to element n, it has non-zero off-diagonal elements. For example, for nearest neighbor
coupling and identical spacing between neighbors, the off-diagonal elements would be κL, with a constant
coupling coefficient κ. As before, we use Dirichlet boundary conditions, i.e., couplings reaching over the
boundaries vanish. The elements of M for more general coupling configurations are provided in the
supplemental Matlab code.
B. The non-resistive case - eigenvalue solutions
We first consider the computation of the excitation spectrum and current modes of the system of Eq. (2) for
the ideal case of no resistance (R = 0). In this case, it is not necessary to consider driving voltages, i.e.,
[𝑍𝑍(𝑖𝑖)+𝑖𝑖𝑖𝑖𝑖𝑖]𝐼𝐼=𝑉𝑉 .
(1)
(2)
(3)
(4)
This can be stated as the eigenvalue problem
1𝑖𝑖𝑖𝑖𝑛𝑛𝐼𝐼𝑛𝑛=𝑖𝑖2(𝐼𝐼𝑛𝑛+𝜅𝜅𝑛𝑛−1𝐼𝐼𝑛𝑛−1+𝜅𝜅𝑛𝑛𝐼𝐼𝑛𝑛+1) .
𝑖𝑖−1𝐸𝐸𝐼𝐼=𝑖𝑖2𝐼𝐼 ,
with M defined as above and E a diagonal matrix with elements 𝐸𝐸𝑛𝑛=𝑖𝑖𝑛𝑛−1. The N eigenmodes consist of the
N current amplitudes In , and the eigenvalues are the squared resonance frequencies.
Numerical solutions of Eq. (4) for four different dimeric arrays with N = 14 elements were obtained with
Voss & Ballon, Topological modes in RF resonators
4
is a real-valued constant reference impedance. In order to compare numerical simulations of Eq. (2) with our
input current to the first element (n = 1). We obtained good agreement between experimental and simulated
Matlab. The four resonator array combinations were defined as follows: (i) a dimer array with capacitances
[C1, …, C14] = [CB, CY, CB, CY, CB, CY, CB, CY, CB, CY, CB, CY, CB, CY], or more briefly, BYBYBYBYBYBYBY,
where B ("Blue") stands for elements with 200 MHz base frequency and Y ("Yellow") for elements with 220
MHz base frequency. (ii) a dimer array with a defect (in bold) close to the drive element, with elements
BYBBYBYBYBYBYB. (iii) a dimer array with a defect at the center of the array, with elements
BYBYBYBBYBYBYB, and (iv) a dimer array with a defect at the right end of the array, with elements
BYBYBYBYBYBYBB. The N eigenmodes, or current amplitude distributions (left column of Fig. 2) were
overlaid on a color-coded pattern of capacitances. The color-coding is the same as described in Fig. 1. The
arbitrary sign of the eigenmodes was fixed by the convention that the second vector component was always
chosen to be larger than the first one. The dispersion relation (middle column of Fig. 2) is defined here as the
graph of the eigenfrequencies or resonance frequencies vs. their corresponding mode numbers. In these
simulations, which can be reproduced with the supplemental Matlab toolbox, the magnetic matrix M
contained non-vanishing mutual couplings including the six nearest neighbors of each array element, in both
directions. This coupling scheme was chosen since it best approximated the measured numerical coupling
values of the array as described below.
C. The resistive case - scattering parameters
Resonances were measured with a network analyzer via the input port voltage reflection coefficient, or the
scattering matrix parameter S11, displayed as a function of frequency. The relationship between S11 and the
input impedance Z of a system is given by 𝑆𝑆11(𝑖𝑖)=𝑍𝑍(𝑖𝑖)−𝑍𝑍0
𝑍𝑍(𝑖𝑖)+𝑍𝑍0 , where the characteristic impedance Z0 = 50 Ω
measurements, we used 𝑍𝑍(𝑖𝑖)=𝑈𝑈(𝑖𝑖)/𝐼𝐼1(𝑖𝑖), where 𝑈𝑈(𝑖𝑖) is the (unknown) input voltage and 𝐼𝐼1(𝑖𝑖) the
values of S11 if 𝑈𝑈(𝑖𝑖) was set to 50 V and the simulated S11 were offset by the measured baseline value for
S11.
Simulated currents in the N resonator array elements were obtained by numerically solving Eq. (2) for the
current amplitude vector I. The driving voltage vector V = (V1, … VN) depends on the system configuration.
For the system as shown in Fig. 1, we have found that the drive affects not only the first element but also
additional elements down the array via inductive coupling. By measuring the flux coupling between the drive
loop and an isolated array element, positioned at different distances from the drive loop, we found that we
needed to include the first six elements in the definition of the driving vector. The voltages were then
discounted by the flux couplings. Therefore, in simulations the drive vector was defined as 𝑉𝑉=
𝑉𝑉0[𝜅𝜅(𝑥𝑥1),…,𝜅𝜅(𝑥𝑥6),0,…,0], with V0 = 1 and xi (i = 1 … 6) the distances between the drive and the isolated
array element. The resistance of each loop was estimated from the linewidth of an isolated element resonance
as R = 0.1 Ω.
D. Experiment
The experiment shown in Fig. 1 consisted of an RF array with 14 LC resonators and a geometrically identical
drive element. The top part of each rectangular LC loop was comprised of a high-precision trim capacitor (1
pF to 30 pF, Johanson Manufacturing, part no. 5641), and the other three sides of copper tape, mounted on
plastic building blocks (Lego System A/S, 1 × 4 brick). The driving loop had no capacitor and was directly
connected to the network analyzer port. The inner dimensions of each loop were 32 mm width x 30 mm
height x 8 mm depth. All array elements had a distance of 8 mm to each other and were oriented as shown in
Fig. 1. This stackable array allowed for an easy setup of different configurations, such as dimers with
Voss & Ballon, Topological modes in RF resonators
5
values
for
the
coupling
Numerical
(1−𝜅𝜅)𝐿𝐿𝑖𝑖 > 𝑖𝑖1=� 1
coefficients were
alternating capacitances, or defects at different positions. The coupling coefficients between elements were
determined by measuring the mode splitting between two LC elements with varying distance. From the
analytic solution of Eq. (4) one obtains 𝑖𝑖2=� 1
(1+𝜅𝜅)𝐿𝐿𝑖𝑖 . Solving for 𝜅𝜅 yields 𝜅𝜅=𝑖𝑖22−𝑖𝑖12
𝑖𝑖12+𝑖𝑖22 .
𝜅𝜅(𝑥𝑥1),…,𝜅𝜅(𝑥𝑥6)=0.16,0.050,
0.020,0.010,0.0056,0.0033. The inductance L of the elements was estimated by numerical simulations of
the mutual inductance M between elements based on the Neumann formula [20] and then using 𝑖𝑖=𝑖𝑖/𝜅𝜅 .
Using the relationship between the resonance frequency of an isolated element, 𝑖𝑖𝑖𝑖= 𝑖𝑖0−2, capacitances
were estimated as CB = 23.6 pF and CY = 19.5 pF.
E. Large array simulations and bulk spectra
In order to assess effects of larger N (mesoscopic systems), numerical simulations were performed by using
the same methods as above. Simulations in Fig. 3A - D were performed with N = 64 elements and base
frequencies of 200 MHz (blue) and 240 MHz (yellow). In Fig. 3E, the couplings were varied relative to the
ones experimentally observed and were overall smaller, i.e, the system was considered more spaced out than
the experimental system (N = 256). In addition, bulk spectra [2, 21] were computed in order to characterize
the system under a broad variety of system parameters. In the matrix columns of all panels in Fig. 4, the base
frequency fn of the nth resonator (n = 1 … N) was varied according to
This was repeated for each value of the parameter θ∈[0,2π], in steps of 0.0045 radians, shown on the
abscissa.
𝑓𝑓𝑛𝑛= 210 + 10 sin(𝑛𝑛θ) MHz .
(5)
III. RESULTS
A. Simulated non-resistive eigenmodes
The simulated eigenmodes for a dimeric system with no resistance, Eq. (4), are shown in the left column of
Fig. 2, and the associated eigenvalues in the center column of Fig. 2. For the BY configuration without a
defect, the dispersion relation yields two bands with a bandgap of about 20 MHz centered at 215 MHz (Fig.
2A, center column). Introduction of a BB defect produces a localized topological mode in the bandgap (Figs.
2B - D). The position of the drive loop relative to the defect determines its visibility in an S11 measurement
by virtue of the inductive coupling, which persist beyond nearest neighbors for the configurations shown in
Fig. 1. Coupling becomes negligible beyond the sixth element (Fig. 2, right column, black graph).
Voss & Ballon, Topological modes in RF resonators
6
Figure 2: Small dimeric systems of RF resonators exhibiting topological modes. Simulated eigenmodes (left column),
dispersion relations (center column) and S11 resonance spectra (right column; with experimental measurements in red)
for different configurations of a dimeric system with N = 14 elements: (A) Dimeric array with alternating base
frequencies showing two bands in the dispersion relation and simulated/measured resonance spectrum. (B) A defect
near the resonator drive causes a topological mode in the bandgap (blue arrows). (C) As the defect is moved further
away from the drive, the dispersion relation remains virtually unchanged but the resonance signal weakens as
expected. (D) A defect at the opposing end of the array is beyond the coupling limit from the drive loop and thus the
local topological mode is no longer visible.
Voss & Ballon, Topological modes in RF resonators
7
B. Simulated resistive modes
In realistic applications, it is important to understand the properties of the system for the resistive, or lossy,
case. This case is described by Eq. (2), which contains a driving term to compensate for the losses. It is no
longer a homogeneous eigenvalue problem but still can be solved by standard numerical methods. The
solutions yield the current amplitudes in each resonator. As the resistance approaches zero, these solutions
converge to the eigenvalue solutions of Eq. (4).
The simulated real parts of current distributions for the four resistive RF arrays (not shown) are visually
indistinguishable from the eigenmode solutions, with the exception of the highest mode numbers, where
resonances are not clearly separable. The simulated and measured scattering parameters S11 are shown in the
right column of Fig. 2 and are in close agreement, too.
C. Numerical simulations of large resonator arrays
The RF resonator arrays discussed in this work are easily scalable to larger N, for example by using printed
circuit boards. This allows for studying mesoscopic systems, in which all resonators still exhibit individual
signatures in a semi-continuous band structure. As an example, numerical solutions of Eq. (4) for larger N
are provided in Fig. 3 for a dimeric YB system with no defects. The base frequencies of the blue and yellow
elements are 200 MHz and 240 MHz, respectively. For nearest-neighbor coupling (Figs. 3A and B), two
semi-continuous bands are observed, each comprising half of the modes for even N. For greater than nearest-
neighbor coupling as measured in our experimental system (Figs. 3C and D), one (even N) or two (odd N)
isolated topological modes appear in the spectrum. The eigenfunctions of these modes identify them as edge
states. Similarly appearing edge states have been observed in one-dimensional photonic systems previously
[7]. Figure 3E shows how the edge state branches off as an isolated state separated from the two semi-
continuous energy bands (blue arrow). Overall, this behavior resembles electronic surface states observed in
crystals [22].
Voss & Ballon, Topological modes in RF resonators
8
Figure 3: Edge modes. Numerical solutions of the eigenvalue problem for larger N in arrays with nearest-neighbor
(A, B) and greater than nearest-neighbor (C, D) coupling. An even number of elements produces one edge mode (C),
and odd number produces two edge modes (D) in the band gap. The edge or surface state branches off as an isolated
state clearly separated from the two semi-continuous energy bands that emerge from the individual resonators as they
form a dimeric system (E; blue arrow; N = 256).
D. Bulk spectral characteristics
In order to provide a more comprehensive picture of the behavior of RF resonator arrays, their
electromagnetic parameters can be varied in a systematic way, and the resulting parameter space sequentially
interrogated for solutions to the system Hamiltonian, in this case represented by the Kirchhoff circuit
Voss & Ballon, Topological modes in RF resonators
9
equations. For identical geometries of the individual array elements, there are two easily accessible
parameters: The capacitances (or, equivalently, the base frequencies of the isolated elements) and the
couplings between elements. The couplings can be varied by adjusting the distance between array elements,
or their position to each other, for example by tilting them. Since in our experiment it was easier to vary the
capacitances, we proceeded with this approach using Eq. (5). This method was recently applied to a
mechanical system [2] that yielded spectral characteristics similar to the energy levels of Bloch electrons in
magnetic fields [21].
Results are shown in Figs. 4A to C for an N = 14 array and in Fig. 4D for an N = 128 array. It can be seen
that even for a system of only 14 resonators the resonance spectra can be quite complex (Fig. 4B; using Eq.
(4)). However, considering resistance (Fig. 4C; obtained from Eq. (2)) and assuming that the system is
measured using S11 reflection, not all resonances have the same strength; some S11 reflection coefficients are
quite small and resonances would not always be observable in realistic situations. In any case, Figs. 4B and
C already foreshadow the full, fractal, complexity of a much larger system with 128 elements shown in Fig.
4D, using Eq. (4). Similarly to the spectral butterfly pattern obtained by Apigo et al. [2], it would be possible
to align at least one bulk spectral gap at any desired frequency within the bulk range.
E. Numerical code
A Matlab script "RFmodes.m"
is provided at
https://codeocean.com/capsule/3923089/tree/v2. It can be modified and executed directly on the server, or
downloaded, and is pre-configured to simulate systems with large N, too.
the simulations of Fig. 2
reproduce
to
Voss & Ballon, Topological modes in RF resonators
10
Figure 4: Bulk spectral characteristics of RF resonator arrays. The bulk spectral characteristics are obtained by
systematic variation of system parameters (here the capacitances) according to a sinusoidal variation of the base
frequencies of the resonators as given in Eq. (5). They provide a comprehensive visualization of the possible spectral
properties of the system. (A) Base frequency variations from 200 to 220 MHz used for simulations of the bulk spectral
characteristics in (B) for a system with N = 14 resonators. (C) The same bulk spectral characteristic for the resistive
case. The magnitude of the S11 reflection coefficient is shown in color, where blue indicates baseline values and yellow
indicates resonances. (D) bulk spectral characteristics for N = 128.
Voss & Ballon, Topological modes in RF resonators
11
IV. DISCUSSION
Bulk resonant modes of physical systems are ubiquitous in physics and form the underpinning of theoretical
descriptions of phenomena across a wide range of applications. Surface or edge states arising from
topological properties are no less common though only more recently studied in detail. As the identification
of these states in both natural and artificial systems continues, it has been recognized that incorporation of
topological modes into engineered metamaterials may result in physical properties that are unavailable in
nature. In this context, tools for rapid simulation and prototyping of topological states may be of considerable
benefit. Radiofrequency resonator arrays afford a solution to this problem. They are extremely simple and
inexpensive to construct, and the instrumentation used to evaluate them has been standard in RF analysis for
many years. As demonstrated, even the simplest one-dimensional RF array exhibits rich mode structure; for
example, we have observed surface modes when the coupling is non-local (Figs. 3 C, D). In our one-
dimensional dimer array, non-local coupling is required for a resonator to couple to another resonator with
the same base frequency, as the nearest neighbors have different base frequencies. We have also observed
doublets of surface modes (Fig. 3D) in arrays with an odd number of elements for the case that the base
frequency of the two edge resonators is higher than the other base frequency.
The Hofstadter butterfly plots of Fig. 4 are a convenient means for rapidly evaluating the space of dispersion
relations generated by variation of the capacitance according to the hull function of Eq. (5). The plot of Fig.
4C was developed for the present work and includes the effect of dissipation in the system, in this case
realized by the resistance in each resonator. This presentation facilitates an evaluation of the relative Q-values
of every state by virtue of the linewidth in the plot.
We have considered only the case of fixed inductances and variable capacitances. However, similar results
can be obtained for variable inductances and fixed capacitances. For example, variable mutual inductance
yields very similar bulk spectral characteristics to the ones shown in Fig. 4. This is important when
downscaling the system size to microscopic length scales, and lumped element capacitors become impractical
[8]. Variations in the geometry of the elements or variations in the spacing between identical elements can
then be used to achieve variable inductance or mutual inductance, respectively.
We note that while the toolbox can be used in a conventional way to model and solve problems of topological
states in RF arrays, its application can be used more broadly. It is well known that there are isomorphisms
between electromagnetic and mechanical systems, such that the behavior of the latter can be solved by
consideration of the former. This is true of the RF arrays. A close inspection of the Kirchhoff relation of Eq.
(4) reveals that it is a simple representation of the conventional classical wave equation with the spatial
derivatives expressed in the form of a difference equation and a sinusoidal time dependence. Therefore,
topological modes of any N-element physical system for which the wave equation is the governing equation
can potentially be simulated with the RF arrays with proper identification and attention paid to the analogous
variables in the two systems. It is also possible to extend this argument even further, to the study of other
wave equations if the proper care is exercised. An interesting example is the Schrödinger equation.
Comparison with the Kirchhoff relation immediately suggests that the one-dimensional RF array presented
in this work is analogous to a quantum system with an infinite square well potential, and indeed the form of
the eigenfunctions for the two systems are identical. A spatially varying potential can also be introduced in
the RF array by treating the capacitance as a variable as a function of array element. With this definition, a
harmonic oscillator potential results from a parabolic variance of capacitance down the array, and the
numerical solutions to Eq. (4) correspond to the well-known eigenfunctions and equally spaced energy
eigenvalues of the quantum mechanical harmonic oscillator.
Voss & Ballon, Topological modes in RF resonators
12
It is important to point out that while our system is suited to construction on cylindrical substrates, a
companion planar system is easily constructed, and simulation only requires a change in sign of the terms
involving coupling coefficients in Eq. (4). The two configurations are often referred to "low-pass" and "high-
pass" inductively coupled configurations in our previous studies [11-13] since the ordering of the
eigenfunctions is reversed as a function of frequency when comparing the two systems. A combination of
the two configurations, for example a stack of two-dimensional planar resonators, would yield a general
three-dimensional system.
Arrays of radiofrequency resonators are used routinely for signal transmission and reception in magnetic
resonance imaging (MRI) applications. In that case there are typically two approaches to the problem, which
we discuss here in the context of resonant elements coupled only via mutual inductance. The first makes use
of a single bulk mode of the array, produced when the mutual inductance is non-zero. Such an array is
designed to generate a magnetic field amplitude that is as homogeneous as possible over a target volume in
human tissue adjacent to or enclosed by the resonator structure [13, 17, 23, 24]. In the second method,
individual resonant elements are configured such that mutual inductance between the elements is minimized,
ideally rendering them independent, so that time-efficient parallel signal acquisition techniques can be
employed. A sensitivity enhancement near surface tissues then results from the fact that the effective size of
the structure is that of a single element [25]. In the present work, it is evident that even in cases where the
mutual inductances are significant, it is possible to produce edge and surface modes by appropriate
modification of the capacitances, whereby a single or small number of elements resonates independent of the
remainder of the structure. This observation may be useful for the design of hybrid resonators that operate
for example by utilizing a bulk mode for signal transmission, and an edge mode on the same structure for
efficient reception at a targeted location.
It is the hope of the authors that the proposed RF resonator toolbox, both in its numerical and experimental
form, might contribute to the understanding of topological properties of new and existing materials [16, 26-
30], including novel MRI resonator designs [14, 18, 31, 32].
V. AUTHOR CONTRIBUTIONS
Both authors contributed equally to all parts of the manuscript.
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|
1906.02118 | 2 | 1906 | 2019-06-21T15:46:42 | Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures | [
"physics.app-ph",
"nucl-ex"
] | This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown that the enhanced charge trapping takes place at the interface of the thick gate dielectrics in the MNOS transistors at low dose rates (ELDRS). The sensitivity of the radiation effect to irradiation temperature has also experimentally revealed. We associate both effects with the temperature and dose rate dependence of the effective charge yield in the thick oxides described within the framework of the previously proposed model. We have also simulated the I-V characteristics of the transistors for different total doses and irradiation conditions. It has been found the used electric and radiation models consistently describe the observed dependencies of the RADFETs sensitivity on dose rates and irradiation temperatures for the devices with different thickness of insulators. | physics.app-ph | physics | Calibration and electric characterization of p-MNOS RADFETs
at different dose rates and temperatures
P. A. Zimina,b, E. V. Mrozovskayaa,b, P. A. Chubunova,b, V. S. Anashina, G. I. Zebreva,b*
aJSC Institute of Space Device Engineering, Moscow, Russia
b National Research Nuclear University MEPHI, Moscow, Russia
Abstract: This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based
RADFETs measured at different dose rates and irradiation temperatures. It is shown that the enhanced charge trap-
ping takes place at the interface of the thick gate dielectrics in the MNOS transistors at low dose rates (ELDRS). The
sensitivity of the radiation effect to irradiation temperature has also experimentally revealed. We associate both ef-
fects with the temperature and dose rate dependence of the effective charge yield in the thick oxides described within
the framework of the previously proposed model. We have also simulated the I-V characteristics of the transistors for
different total doses and irradiation conditions. It has been found the used electric and radiation models qualitatively
and semi-quantitatively describe the observed dependencies of the RADFETs' sensitivity on dose rates and irradia-
tion temperatures for the devices with different thickness of insulators.
Keywords: RADFET; ELDRS; Total dose effects; Dose rate effects; Simulation; Dosimeter;
1. Introduction
The field-effect-transistor-based dosimeters in which the threshold voltage shift is a quantitative indicator of the ab-
sorbed dose are now widely used due to their simplicity, low cost, low power consumption, and compatibility with
the CMOS technology [1]. The devices used in dosimetry are typically the p-channel MOS or p-MNOS (Metal --
Nitride -- Oxide - Semiconductor) [2, 3] transistors (RADFETs). The design of the RADFETs encounters with the
challenges in ensuring of stability and reproducibility of their radiation and electrical characteristics at different radi-
ation and environmental conditions. Particularly, the I-V characteristics of the MOSFETs are temperature-dependent
which makes it difficult to use the RADFETs in a wide range of ambient temperatures. Besides, one of the signifi-
cant challenges is that the RADFET based dosimeters may be dose rate sensitive. To enhance the sensitivity of the
RADFETs, they are usually made with rather thick gate dielectrics (typically > 100 nm). This could lead to the
occurrence of the enhanced low dose rate sensitivity (ELDRS), which hinders the calibration of dosimeters at
moderate high dose rates. To the best of our knowledge, this effect in the MOSFET based dosimeters was observed
for the first time in [4], and it has not been yet properly investigated experimentally and theoretically (see, also [5,
6]). The ELDRS is also temperature-dependent effect which alters the temperature response of the MOSFET's elec-
tric characteristics. Generally speaking, the development of the RADFET dosimeters requires a combined investiga-
* Corresponding Author, tel. +7499-3240184
E-mail: [email protected]
2
tion of their electrical and radiation characteristics under different conditions. This work aims to investigate and sim-
ulate the radiation response of the stacked MNOS based p-RADFETS at different dose rates and irradiation tempera-
tures.
2. Experiments and modeling
2.1. Experimental conditions
We investigated two types of the stacked MNOS-based devices (at least 4 samples for each type). The thickness
of the Si3N4 layer in both MNOS devices was 150 nm, whereas the thicknesses of the SiO2 layers were 150 nm in the
"thin" devices and 500 nm in the "thick" devices (see Fig. 1). The channel width-to-length ratio W/L for the "thick"
device was approximately three times more than for the "thin" device.
Fig. 1. The band diagram of the p-MNOS based RADFET.
The MNOS devices were irradiated with different dose rates from 0.01 Gy/s to 1 Gy/s using a Co-60 source. Irradia-
tion and measurements were performed at different temperatures (-40°C, +25°C, and +60°C). The experimental dose
error did not exceed 20%. The measurement circuit is shown in Fig. 2. The threshold voltage shift during irradiation
was tracked at a fixed output drain current. The reference drain current
r
DI
and the gate biases were approximately
chosen at the "Zero Temperature Coefficient (ZTC) point" [7]. All measurements were performed with a drain bias
DV = - 0.2 V. The backward substrate bias Vsub= +2.0 V was applied to expand the dynamic range of the measure-
ments. The operation gate voltage range was from 0 to - 12 Volts.
3
Fig. 2. The measurement electric scheme, VD = - 0.2 V, Vsub = 2.0 V. The gate bias during the irradiation VG was changed for a fixed reference
current in the range from - 1.5V to -- 12 V.
The "thick" and the "thin" MNOS transistors have different ZTC points, and therefore different reference drain cur-
rents
r
DI
(145 μA for the "thick" and 55 μA for the "thin" samples).
2.2. Modeling of p-MNOS based RADFETs
The radiation-induced charge per unit area
, trapped at the Si3N4-SiO2 interface, can be estimated as follows
otF is the dimensionless hole trapping efficiency at the Si3N4 -- SiO2
gK 8×1014 cm-3/Gy is the electron-hole pair generation rate constant in SiO2, tox is the silicon oxide
E P T F K t D
ox
otQ
q
eff
Q
ot
(1)
,
g ox
,
,
ot
where D is total dose, q is the electron charge,
interface,
eff
E P T
ox,
,
thickness, and
is the effective charge yield dependent on the oxide electric field
oxE , dose rate P ,
and irradiation temperature T (see Appendix). The charge yield is a very important parameter determining the
charge trapping in the MOS devices at different conditions [8]. The threshold (reference) voltage shift due to the
charge trapping at the Si3N4-SiO2 interface can be described as follows
V
T
Q t
ot N
0 N
,
(2)
0 N is the silicon nitride dielectric permittivity ( N 7.5). Then, the sen-
is the Si3N4 layer thickness, and
where Nt
sitivity of an MNOS RADFET can be naturally defined as
,
0 N
V
T
D
eff
q
S
,
E P T F K t
ox
t
g ox N
ot
.
(3)
The parameters
otF and
room temperature followed by a fitting with
eff were used to fit the sensitivity S for relatively low-dose-rate irradiation (~10-2 Gy/s) at
eff for other dose rates and temperatures. We will show below that the
eff , simulated with the model, described in the Appendix, allows a consistent description for
effective charge yield
different dose rates (ELDRS) and irradiation temperatures.
4
2.3. Calibration tests of the dosimeters
The calibration tests were performed at the different dose rates and irradiation temperatures. Some results of the
calibration measurements are shown in Fig. 3. All the curves exhibit approximately linear (more precisely, slightly
sublinear) dose behavior without noticeable saturation in the working range of doses determined by the operation
range of the output threshold voltage. Presented results show a pronounced enhancement of the charge trapping sen-
sitivity at the low dose rates (ELDRS) [9]. We attributed such behavior to the dependence of the charge yield on dose
rate. The physical model of this effect has been developed and validated in a series of the works [10, 11, 12, 13]. A
synopsis of this model is presented in the Appendix.
(a)
(b)
Fig. 3. Comparison of the experimental (points) and simulated (lines) dose dependencies of the threshold voltage shift at different dose rates
P = 1 Gy/s (circles) and P = 0.01 Gy/s (squares) for the "thick" (a) and "thin" (b) devices, irradiated at room temperature T = +25 OC.
Using Eqs. 1 - 3 and A1 - A3, we fitted the parameters of the radiation model, taking into account the real geometric
sizes of the samples. Comparison of measurements and simulations in Fig. 3 shows a good agreement between the
charge yield model predictions and experimental results at different dose rates. The radiation parameters of the
model are listed in Table A1 of the Appendix.
5
2.4. Electric characterization before irradiation
before irradiation
The I-V characteristics for all samples
0°C, +50°C). The electric characterization
Figure 4 shows a comparison between experimental and simulated results.
experimental and simulated results.
for all samples prior irradiation were measured at three different temperatures (
characterization of the transistors was carried out on the basis of the MOSFET
at three different temperatures (-40°C,
MOSFET model [14].
Fig. 4 Experimental (tokens) and simulated (lines) I
(a)
(b)
) and simulated (lines) I -- V results at different temperatures for the "thick" (a) and "thin" devices
fitted in the characterization were used further for the simulation
fitted in the characterization were used further for the simulation of dose dependencies.
" devices (b). The parameters
The input and fitted parameters of the unirradiated transistors are
Table I. Electrical model parameters
unirradiated transistors are listed in Table I.
Devices\parameters
Nt
, nm
oxt
, nm
W L
0, cm2/V s
Channel hole mobility
"Thick" devices
"Thin" devices
150
150
500
150
580
150
(fitted)
320
350
, mV/K
mV/K
(fitted)
(fitted)
3.5
2.0
T 0V , V
(fitted)
0.2
-0.2
The geometric sizes ( Nt
ture dependence of the threshold voltage of
perature coefficient as follows
,W L ) were
were known from the technical characteristics of the test structures
, oxt
threshold voltage of the p-MOSFETs in the range 200-400K can be described
test structures. The tempera-
described with the tem-
V T
T
V
T 0
T T
0
,
(4)
where
0T is the reference temperature which
0 T in strong inversion
nel hole mobility
which was set to be equal to 300 K. The temperature dependence of the
temperature dependence of the chan-
in strong inversion is mainly determined by the phonon scattering and can be simulated as
phonon scattering and can be simulated as
follows
0
T
3/2
0
T
0
T
,
(5)
where
0 is the mobility at the reference temperature.
reference temperature. The fitted parameters of the electrical model
of the electrical model (,
6
0TV and
0 )
were assumed to be dose-independent and
independent and were then used for simulation of the irradiated devices.
irradiated devices.
3. Simulation of I-V characteristics at
characteristics at different temperatures and doses
The I-V curves measured for different
elevated and low temperatures are shown
with the model parameters, presented in Table
, presented in Table A1.
different total doses in the devices irradiated with a dose rate of
shown in Fig. 5. The shifts of the I-V curves were simulated
of 1.9×10-2 Gy/s at the
mulated for different doses
Fig. 5. Comparison of experimental (points) and simulated (line
(a)
and for the low (b) T = -40°C temperatures, P = 1.9
temperatures, P = 1.9×10-2 Gy /s. The ZTC current is marked by the dashed line
dashed lines.
) and simulated (lines) I-V curves in the "thick" devices (tox = 500 nm) for the
the elevated (a) T = +60°C
(b)
The transconductance at the large gate overdrive biases was
shape of the I-V curves in the weak inversion and
face trap buildup.
The values of the effective charge yield
effective charge yield
large gate overdrive biases was approximately dose-independent.
weak inversion and in the subthreshold regimes is due to the radiation
dependent. The change in the
radiation-induced inter-
eff were found for each experimental I-V curve. Figure 6
Figure 6a shows the dose
dependencies of the effective charge yield values
charge yield values
eff fitted from the results in Fig.5.
Fig. 6. (a) The effective charge yield ηeff fitted from results in Fig. 5
(a)
the simulation results; (b) the temperature dependence of
fitted from results in Fig. 5 as functions of a dose at three different temperatures
the temperature dependence of ηeff simulated with (A1-A3) for P = 1.9×10-
-2 Gy/s.
temperatures, the dashed lines marked
(b)
7
The charge yield
eff practically does not depend on dose,
does not depend on dose, but strongly depends on the irradiation temperature in full
irradiation temperature in full
model, described in the Appendix. The comparison between the
consistency with the charge yield model, described in
experimental points at different irradiation temperatures
Fig. 7a shows the dose dependencies of the
ELDRS effect. Fig. 7b presents a comparison of the theoretical dependence of
b presents a comparison of the theoretical dependence of
at different irradiation temperatures is shown in Fig. 6b.
dose dependencies of the charge yield fitted for different dose rates, which explicitly exhibit the
, which explicitly exhibit the
on the dose rate (see equations
the simulation and the
eff on the dose rate
(A1)-(A3) ) and the values obtained from
the values obtained from the experimental data.
Fig. 7. (a) The effective charge yield ηeff in the "thick" (500 nm) devices
(b)
"thick" (500 nm) devices as functions of dose with different dose rates;
= +60°C (filled tokens and solid line) and T = +25°C (blank tokens and dashed line).
tokens and dashed line).
experiment and simulation for T = +60°C
(b) comparison between
(a)
Similar electric and radiation characterization
and radiation characterization was performed for the "thin" (tox = 150 nm) devices
the experimental and simulated charge yield
ferent temperatures.
charge yield ηeff in the "thin" devices irradiated with a dose rate ~ 2
devices. Fig. 8 shows
ted with a dose rate ~ 2×10-2 Gy/s at dif-
Fig. 8. The effective charge yield ηeff in the "thin" (150 nm) devices as functions of dose
(a)
in the "thin" (150 nm) devices as functions of dose under irradiation with a dose rate 1.9
ion with a dose rate 1.9×10-2 Gy/s at differ-
(b)
ent temperature
ent temperatures; (b) comparison between the experiments and simulation.
Finally, Fig. 9 shows the experimental and
with different dose rates.
shows the experimental and the simulated charge yield in the "thin" devices irradiated at T=+60°C
charge yield in the "thin" devices irradiated at T=+60°C
8
Fig. 9. The effective charge yield ηeff in the "thin" (150 nm) devices as functions of dose
(a)
in the "thin" (150 nm) devices as functions of dose for irradiation at T = +60°C with
(b)
comparison between the experiments
with different dose rates; (b)
s and simulation for T = +60°C (filled tokens and solid lines) and T = +25°C (blank tokens and
= +25°C (blank tokens and
dashed lines).
exhibit at elevated temperatures (T= + 60°C) and relatively
The devices of both types exhibit
(P = 1.9×10-2°Gy/s) a noticeable decrease of the formally fitted
with an annealing process which has not
("fading" of the dosimeters) during irradiation
dependence [15]. This issue requires further experimental and
60°C) and relatively low dose rates
/s) a noticeable decrease of the formally fitted ηeff as the dose increases. We associate this effect
. We associate this effect
not yet been taken into account in our simulations. We found, that the annealing
taken into account in our simulations. We found, that the annealing
) during irradiation in our devices has a form of an approximately logarithmic temporal
approximately logarithmic temporal
res further experimental and theoretical investigations.
4. Summary
thick oxides of the p-MNOS based RADFETs. This is critically important
This paper provides a detailed investigation of electrical characteristics of the stacked p-MNOS transistors irradiated
This paper provides a detailed investigation of electrical characteristics of the stacked p
MNOS transistors irradiated
different dose rates at different temperatures. We have provided a convincing experimental evidence of the
with the different dose rates at different temperatures.
experimental evidence of the
ELDRS effects in the thick oxides of the
important in such devices
variable dose rates in
since the ELDRS effects cause an extremely unwanted sensitivity of the dosimeter
since the ELDRS effects cause an extremely unwanted sensitivity of the dosimeters to the variable dose rate
quantitatively the observed
space. It was shown that the proposed model
dependencies of the dosimeter sensitivity
allows correcting the p-
MNOS transistor. We believe
MNOS based dosimeter indications based on
that the results presented may be more or less common to a wide class of
that the results presented may be more or less common to a wide class of the field-effect-transistor
transistor-based sensors in-
cluding new emergent devices [16, 17].
].
the dosimeter sensitivity S on dose rate and irradiation temperature. This allows correcting the
dosimeter indications based on a preliminary characterization of the p-MNOS transistor
the proposed model can describe both qualitatively and semi-quantitatively
Appendix: Modeling ELDRS in the thick oxides
thick oxides
e sensitivity is often associated only with bipolar devices. We have been assuming
The enhanced low dose rate sensitivity
have been assuming in [10,
] that the ELDRS is a general property of the thick amorphous insulators with low internal electric field. We also
] that the ELDRS is a general property of the thick amorphous insulators with low internal electric field
11] that the ELDRS is a general property of the thick amorphous insulators with low internal electric field
supposed that the ELDRS effects may also occur i
supposed that the ELDRS effects may also occur in the thick isolation oxides of the MOS devices.
n the thick isolation oxides of the MOS devices. In particular, the
high dose rates may result in reducing of the effec-
enhanced trap-assisted electron-hole recombination at
hole recombination at relatively high dose rates may result in reducing
9
tive charge yield in the thick oxides. It was found, that the effective charge yield
eff , limited by recombination be-
tween the mobile electrons and the holes, localized at shallow bulk traps, can be described as a follows
eff
P T t E
,
,
,
ox
E
ox
ox
f
1 4
2
1/2
f
1
,
f E P T
,
,
ox
qt
2
ox
6
ox 0
p
E
2
ox
E K P
ox
g
exp
p
k T
B
,
(A1)
(A2)
where
p is the hole mobility in the SiO2, T is the irradiation temperature, kB is the Boltzmann constant. The high-
field part of the charge yield dependence
oxE
is normally interpolated by a monotonically increasing function of
the internal electric field Eox [18, 19]
0E are the fitting constants, parameterizing a high-field region (when f ≪ 1) of the experimental
E E
ox
0
E E
ox
0
(A3)
0
E
ox
,
1
0
1
where
0 and
dependence. The temperature dependence of
p (see Fig. 1A [20]).
traps in the bulk oxide
eff is determined by the effective energy depth of the shallow hole
Fig. A1. Mechanism of electron-hole recombination through the hole levels localized near the valence band edge of the SiO2.
All parameters of the model used for simulations are presented in Table A1. In fact, only Eox and Fot were varied as
fitting parameters in Table A1. The basic physical parameter that determines the temperature dependence of the
charge yield experimentally found in [11] ( p 0.39 eV) has been successfully used to describe radiation-induced
degradation in different devices [10-13, 20].
10
Table A1. Radiation model parameters
Fot
Eox, V/cm
p , eV
0
0E , V/cm
0.47
8×104
0.49
2.3×104
0.39
0.39
0.52
0.52
4.5×105
4.5×105
"Thick"
devices
"Thin"
devices
Acknowledgment
the oxide hole
mobility cm2/(V s),
p
10-5
10-5
This work was supported by the Competitiveness Program of the NRNU MEPHI, Russia.
References
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|
1807.11764 | 1 | 1807 | 2018-07-31T11:24:25 | Pressure sensing with Zero Group Velocity Lamb modes in self-supported a-SiC/c-ZnO membranes | [
"physics.app-ph"
] | The propagation of the Lamb modes along a-SiC/ZnO thin supported composite structures was simulated for different ZnO and a-SiC layer thicknesses and electrical boundary conditions. The phase and group velocity, the field profile and the electroacoustic coupling coefficient dispersion curves of the Lamb modes travelling along the composite plate were calculated for different layers thicknesses. Zero group velocity (ZGV) points were identified which group velocity vanishes while the phase velocity remains finite, at specific layers thickness values. ZGV resonators (ZGVRs) were designed that consist in only one interdigital transducer (IDT) and no grating reflectors at its sides. The finite element method analysis was performed to investigate the strain, stress and internal pressure the a-SiC/ZnO plate experiences when subjected to an external uniform differential pressure in the 1 to 10 kPa range. The ZGVR pressure sensitivity, i.e. the relative frequency shift per unit pressure change, was found to be mostly affected by the change in the membrane thickness induced by the pressure. A pressure sensitivity of 9 ppm/kPa, in the 4 to 10 kPa range, was predicted for the a-SiC(1{\mu}m)/ZnO(1{\mu}m) ZGV-based pressure sensor. The feasibility of high-frequency micro-pressure sensors based on a-SiC and ZnO thin film technology was demonstrated by the present simulation study. | physics.app-ph | physics | Pressure sensing with Zero Group Velocity Lamb modes in
self-supported a-SiC/c-ZnO membranes
C. Caliendo*1, M. Hamidullah1
1Institute for Photonics and Nanotechnologies, IFN-CNR, Via Cineto Romano 42,
00156 Rome, Italy
*Corresponding author; email: [email protected]
Abstract. The propagation of the Lamb modes along a-SiC/ZnO thin supported composite
structures was simulated for different ZnO and a-SiC layer thicknesses and electrical boundary
conditions. The phase and group velocity, the field profile and the electroacoustic coupling
coefficient dispersion curves of the Lamb modes travelling along the composite plate were
calculated for different layers thicknesses. Zero group velocity (ZGV) points were identified
which group velocity vanishes while the phase velocity remains finite, at specific layers
thickness values. ZGV resonators (ZGVRs) were designed that consist in only one interdigital
transducer (IDT) and no grating reflectors at its sides. The finite element method analysis was
performed to investigate the strain, stress and internal pressure the a-SiC/ZnO plate
experiences when subjected to an external uniform differential pressure in the 1 to 10 kPa
range. The ZGVR pressure sensitivity, i.e. the relative frequency shift per unit pressure change,
was found to be mostly affected by the change in the membrane thickness induced by the
pressure. A pressure sensitivity of 9 ppm/kPa, in the 4 to 10 kPa range, was predicted for the
a-SiC(1μm)/ZnO(1μm) ZGV-based pressure sensor. The feasibility of high-frequency micro-
pressure sensors based on a-SiC and ZnO thin film technology was demonstrated by the
present simulation study.
Keywords: zero group velocity; Lamb modes; a-SiC; ZnO; composite plate; pressure sensors.
1. Introduction
The acoustic waves that propagate in finite-thickness isotropic homogeneous plates are divided into
two classes: Lamb waves and shear horizontal (SH) plate waves. These waves are decoupled and can
be distinguished into symmetric and anti-symmetric modes, Sn and An, where n is the mode order; an
infinite number of Sn and An modes exist in a plate. The Lamb modes are elliptically polarized in that
they show two particle displacement components, U1 and U3, parallel and orthogonal to the wave
propagation direction x. U1 lies in the plane that contains the wave vector k: its depth profile is
symmetric with respect to the mid-plane of the plate for symmetric modes while it is antisymmetric for
the antisymmetric modes. U3, the shear vertical component, is perpendicular to the plate surface: its
depth profile is antisymmetric to the mid-plane of the plate for the symmetric modes, while it is
symmetric for the antisymmetric ones [1, 2]. The SH plate modes are horizontally polarized and have
only one particle displacement component, U2, that lies in the plane that contains the wave vector k
and is orthogonal to k. Guided waves travelling in a homogeneous anisotropic plate have three particle
displacement components (U1, U2 and U3.) since the Lamb waves and the SH waves are generally
coupled [3]. If the plane of propagation coincides with a plane of symmetry of the material, then Lamb
modes are decoupled from the SH modes, and symmetric and anti-symmetric modes can be still
distinguished. The characteristics of Lamb waves propagating in non-homogeneous composite plates
(i.e., bi-layered composite plates) are more complex than in homogeneous isotropic plates as the
waveguide symmetry with respect to the mid plane of the plate is lost and the modes can no more be
identified as symmetric or antisymmetric: the modes are generically distinguished by a number in the
1
order in which they appear along the frequency axis. All the modes are dispersive as their velocity
depends on the plate thickness-to-wavelength ratio H/λ, and some modes have group and phase
velocities with opposite signs. For some branches of the angular frequency dispersion curves, ω vs k, a
strong resonance occurs at the frequency minimum corresponding to a zero-group velocity (ZGV)
Lamb mode: this stationary non-propagating mode is characterized by a vanishing group velocity vgr =
ω/k combined with a non-zero wave number k [4 -- 8]. The ZGV points appear in the frequency
spectrum of both monolayer (isotropic and anisotropic) and multilayer plates. Depending on the plate
material type and crystallographic orientation, in addition to modes with a single ZGV point, some
modes exhibit double and even multiple such points [9] as their dispersion curve undergoes multiple
changes in the sign of its slope. If the composite waveguide consists in a piezoelectric layer (such as
ZnO or AlN) and a non-piezoelectric layer, the Lamb wave propagation can be excited and detected
by use of interdigitated transducers (IDTs), as for the surface acoustic waves (SAWs). The IDTs can
be either positioned onto the free surface of the piezoelectric layer or buried under the piezoelectric
layer, thus allowing the exploitation of different electroacoustic coupling configurations.
ZGV resonators (ZGVRs) are associated with an intrinsic energy concentration beneath the IDT.
Due to the vanishing group velocity, the acoustic energy cannot be carried away from the IDT, leading
to a stationary non-propagating mode. They can be fabricated with a technology simpler than that
required by the surface acoustic wave resonators (SAWRs) and Lamb wave resonators (LWRs). In the
SAWRs the acoustic energy is entirely confined to the substrate surface: the IDT and the two grating
reflectors positioned at its sides define the boundary of the planar resonant cavity. The most severe
limitation of the SAWRs are the low velocity and Q factor. LWRs are based on two well-known
configurations. The grating-type [10] configuration employs one or two IDTs and two or three
reflective gratings, similar to the one- or two-port SAWRs [11]: the waves launched by the IDTs are
reflected back by the gratings to reduce the energy loss [12]. The free edges [13] configuration
includes only the IDT and no reflectors: the waves propagate in the piezoelectric thin plate until they
reflect from the suspended free edges of the thin plate. Another example of LWR is the ZGVR: it
requires only one IDT and a properly selected plate thickness-to-wavelength value [14, 15]. At the
ZGV point, the energy cannot be carried away from the IDT, leading to a strong resonance of the
plate. The ZGVRs have dimensions smaller than those of the LWRs or SAWRs as they consist in only
one interdigital transducer and no grating reflectors at the IDT's sides. The ZGVRs are capable of
solving the low frequency and Q limitation faced by the SAWRs as the phase velocity of the ZGV
modes is much larger than the SAW velocity.
Non-piezoelectric amorphous SiC (a-SiC) shows excellent properties such as a high acoustic wave
velocity, resistance to chemicals, high hardness and compatibility with the integrated circuit
technology as it can be deposited by a r.f. magnetron sputtering system [16-18] at 200°C onto Si(100)
substrates from a sintered SiC target. Piezoelectric wurtzite ZnO thin film technology has been widely
used for many years for the fabrication of SAW devices onto non-piezoelectric substrates, such as
silicon, glass, and sapphire, to name just a few. When the piezoelectric ZnO film is grown onto high-
velocity materials, such as diamond or SiC, it is a promising candidate for high frequency, high
sensitivity micro sensors [19]. A bi-layered a-SiC/ZnO composite thin plate, few micrometers thick,
can be obtained by standard technological processes, such as the magnetron sputtering growth of the a-
SiC and ZnO layers onto a Si(100) wafer, and the backside Si/a-SiC/ZnO micro-machining process for
the fabrication of suspended membranes. In this case the a-SiC film plays the role of a back-etching
stop layer, allowing the release of the a-SiC/ZnO suspended membrane.
This paper provides a simulation study of the ZGV modes in a-SiC/ZnO waveguides for different
layers thicknesses. The ZGVR pressure sensitivity, i.e. the relative resonant frequency shift per unit
pressure change, has been calculated under external uniform differential pressure, in the 1 to 10 kPa
range. The finite element method (FEM) analysis has been performed to investigate the ZGVR strain,
stress and internal pressure, thus allowing to get a further insight into the ZGVR-based pressure
sensitivity. The feasibility of high-frequency micro-pressure sensor based on a-SiC and ZnO thin film
technology was demonstrated by the present simulation study. A pressure sensitivity (9 ppm/kPa in the
4 to 10 kPa range) higher or at least comparable to that of SAWRs-based sensors [20-22] was
predicted for the 1-1 ZGV2-based pressure sensor.
2
2. LAMB MODES IN a-SiC PLATES
The phase and group velocity dispersion curves of the Lamb modes propagating along the bare
amorphous SiC (a-SiC) thin plate were calculated using the Disperse code [12] (matrix method
software DISPERSE) and are shown in Figures 1a-b for an a-SiC plate with thickness H = 5 µm; the
a-SiC elastic constants (c11 = 375.3 and c12 = 112.5 GPa ) and the mass density (ρ = 3079 kg/m3) were
extracted from reference 23.
Figure 1. The phase and group velocity, vph and vgr, vs
thickness-to-wavelength ratio H/λ curves of the Lamb modes
travelling in a bare a-SiC plate, 5 µm thick.
As it can be seen in Figure 1, the first symmetric and second anti-symmetric modes, S1 and A2, are
characterized by a ZGV point to which a non-zero wave number (non-zero phase velocity)
corresponds. At this specific plate thickness-to-wavelength ratio H/λ the acoustic energy does not
propagate in the waveguide (as the vgr is null), resulting in sharp resonance effects, as opposed to the
plate thickness resonances which associated with k = 0. The vgr of the S1 mode vanishes at frequency f0
= 1033 MHz (phase velocity vph =1.8075 km/s); the vgr of the A2 mode vanishes at frequency f0=
1902.8 MHz (vph =2.824 km/s). Figures 2a and b show the mode shape and the power flow density of
the S1 and A2 ZGV points; the three quantities have been reduced to dimensionless quantities. The
ZGV power flow, the integral of the power flow density in the wave propagation direction (positive x
direction), over the plate thickness, ∫
𝐻
2⁄
−𝐻
2⁄
𝑃𝑥
, is zero, as opposed to the cases of the backward-wave
motion (vgr and vph have opposite sign) and forward-wave motion (vgr and vph have equal sign) which
correspond a negative and positive power flow, respectively. The middle of the membrane was chosen
to be the zero depth (rather than the surface) in order to emphasize the symmetry with respect to the
plate midplane.
3
Figure 2. The power flow density Px and the mode shape of the
ZGV points corresponding to a) the S1 mode and b) the A2
mode of an a-SiC plate, 5 µm thick. The middle of the
membrane was chosen to be the zero depth.
For the S1 mode, U1 is symmetric around the mid-plane of the plate while U3 is antisymmetric; for the
A2 mode, U3 is symmetric while U1 is antisymmetric with respect to the mid-plane of the plate. U1 and
U3 are normalized to the U1 value at the plate surface [24, 25].
Since a-SiC is not piezoelectric, a thin piezoelectric film is required to cover the a-SiC surface in order
to excite the Lamb modes propagation by means of IDTs.
3. LAMB MODES IN ZnO/a-SiC PLATES
The phase and group velocity dispersion curves of the ZnO/a-SiC composite plates were calculated by
the software DISPERSE [26] for different layers thicknesses. The w-ZnO material constants were
extracted from reference 27; as the Disperse software doesn't account for the ZnO piezoelectric
constants, then its database was provided with the ZnO stiffened elastic constants calculated with a
Matlab routine. The ZnO/a-SiC composite structure brakes the mid-plane symmetry, thus the
symmetric and antisymmetric nature of the modes is hardly distinguished, except for the two
fundamental modes, named quasi-S0 (qS0) and quasi-A0 (qA0); the higher order modes are labeled with
a progressive number as well as the corresponding ZGV points. Different ZnO/a-SiC composite plates
were modelled with variable a-SiC and ZnO layers thickness in the 1 to 5 μm range. These plates will
be labelled hereafter with two numbers: the first corresponds to the ZnO layer thickness in μm, and the
second corresponds to the thickness of the a-SiC layer. As an example, figures 3a-b show the phase
velocity dispersion curves of the Lamb modes travelling in the ZnO/a-SiC 2.5-5 and 5-2.5 composite
plates: it can be noticed that the number of the propagating modes and their velocity are highly
affected by the two layers thickness.
4
Figure 3. The phase velocity dispersion curves of the Lamb modes traveling along the a) 2.5-5 and
b) 5-2.5 ZnO/a-SiC composite plates.The four coupling configurations of the ZGV resonator.
In the studied frequency range (from few MHz up to 2 GHz), it was found that the 1-5 and 2-5
composite plates exhibit only one ZGV point corresponding to the mode 2 (namely the quasi-S1 mode,
qS1) at frequencies f0 = 763.633 and 604.668 MHz, hereafter named ZGV2. The 3-5 and 4-5
composite plates exhibit three ZGV points corresponding to mode 2 (at frequencies f0 = 499.535 and
424.938 MHz), mode 5 (f0 = 1059.72 and 900.896 MHz), and mode 8 (f0 = 1590.61 and 1334.08
MHz), named hereafter ZGV2, ZGV5 and ZGV8. The 5-5 composite plate exhibits up to five ZGV
points corresponding to mode 2, mode 5, mode 8, mode 11 and mode 14, named ZGV2, ZGV5,
ZGV8, ZGV11 and ZGV14, at f0 = 369.378, 781.106, 1157.21, 1570.64 and 1954.31 MHz,
respectively. As an example, figures 4a-b show the group velocity vgr dispersion curves of the modes 2
and 5, for different ZnO layer thicknesses and fixed a-SiC layer thickness (5 μm). The abscissa is the
total plate thickness-to-wavelength ratio Htot/λ = (ha-SiC + hZnO)/λ.
Figure 4. The group velocity vs Htot/λ of the a) mode 2 and b) mode 5 of the ZnO/a-SiC plate; the a-
SiC thickness is fixed (5 μm) while the ZnO thickness is the running parameter.
5
With increasing the piezoelectric layer thickness from 1 to 5μm, the abscissa of the ZGV2 decreases as
the corresponding wavelength increases and thus the ZGV2 resonant frequency f0 = vph⁄λ moves
toward lower values. The dispersion curves of the mode 5 do not cross the zero group velocity axis for
the 1-5 and 2-5 plates, as opposed to the thicker plates.
The mode shape of the ZGV2 , ZGV5 and ZGV8 for the 3-5 composite plate is shown in figures 5a-c
as an example. The middle of the composite membrane, 8 μm thick, was chosen to be the zero depth in
order to emphasize the plate asymmetry with respect to its midplane. The acoustic field profile of the
ZGV2 still shows some peculiarities typical of the first anti-symmetric mode S1. The field profile of
the ZGV5 and of the ZGV8, have the characteristic shape of a higher order mode but it is artificial to
identify a similarity with a symmetric or anti-symmetric mode.
Figure 5. The mode shape of the a) ZGV2, b) ZGV5 and c) ZGV8 of the 3-5 structure; the grey area
defines the a-SiC thickness. The middle of the composite membrane, 8 μm thick, represents the zero
depth.
Finite element method (FEM) simulations have been carried out by using COMSOL Multiphysics 5.2
to explore the field shape of the ZGVRs in the composite waveguide. The simulations accounted for
five Al IDT finger pairs, 0.1 μm thick and λ/4 wide, located onto the free surface of the ZnO layer: the
terminal (1V) and ground electrical boundary conditions were applied at the top surface of the
interdigitated electrodes alternately. Two perfectly matched layers (PML), each one wavelength wide,
were applied on the left and right side of the a-SiC/ZnO plate, in order to model a domain with open
boundaries through which the wave pass without undergoing any reflection; the traction free boundary
conditions were applied to the top and bottom sides of the composite plate. The total length of the
studied cell is 20·λ, including the two PMLs.The maximum and minimum mesh size were λ/10 and
λ/100. The ZnO was assumed to have an elastic loss tanδ = 0.002. As an example, figures 6a-c show
the absolute total displacement of three zero group velocity points (ZGV2, ZGV5 and ZGV8)
belonging to the 3-5 plate, and corresponding to λ = 36, 49 and 35 μm respectively. As it can be seen,
the displacement is confined only in the region underneath the IDT.
6
Figure 6. The absolute surface total displacement of the (a) ZGV2, (b) ZGV5, and (c) ZGV8 mode
for the 3-5 composite plate, with λ = 36, 49 and 35 μm, respectively.
4. THE ELECTROACOUSTIC COUPLING COEFFICIENT
The electroacoustic coupling coefficient K2 is a measure of the IDTs electrical to acoustic energy
conversion efficiency
the ZnO/a-SiC composite plates, four
electroacoustic coupling configurations can be obtained by placing the interdigital Transducers at the
in piezoelectric materials. In
7
substrate/film interface (sTf) or at the film surface (sfT), further including a floating metal electrode
opposite the IDTs (sTfm and smfT), as shown in figure 7.
Figure 7: The four coupling configurations: sfT, smfT, sTf, and sTfm.
The K2 of the ZGV modes was calculated by the following approximated formula, 𝐾2 = 2 ∙
[(𝑣𝑓 − 𝑣𝑚)/𝑣𝑓], where vf and vm are the phase velocities of the mode for the free and electrically
short-circuited surfaces of the ZnO film [28-30]. The vf and vm were calculated for different a-SiC and
ZnO layers thicknesses using McGill software [31]; the ZnO and a-SiC were assumed to be lossless,
and their material constants (mass density, elastic, piezoelectric, and dielectric constants) were
extracted from references 23 and 27. The K2 has dispersive characteristics and it is highly affected by
the electrical boundary conditions. Figure 8 shows the K2 vs the ZnO thickness curves of the ZGV2
mode, for the four coupling configurations, at fixed a-SiC layer thickness (5 μm thick). Each ZnO
thickness corresponds a different wavelength: λ ranges from 20 to 50 μm for the 0.5-5 to the 5-5
ZGV2 plate. The sTfm and smfT configurations are the most efficient between the four: their K2
reaches 3.9 and 3.3% for the 5-5 plate. The K2 of the four configurations starts to decrease for further
increase in the ZnO layer thickness.
Figure 8. The K2 dispersion curves of the ZGV2 mode of the four coupling configurations; the a-SiC
layer thickness is fixed (5 μm thick).
As an example, figure 9 shows the admittance vs frequency curves of the ZGVR based on the ZGV2
of the 5-5 composite plate, for the four coupling configurations; the inset shows the effective
8
electromechanical coefficients 𝑘𝑒𝑓𝑓
2 = (
𝑓𝑝
2
2−𝑓𝑠
𝑓𝑝
2 ) of the four configurations. The smfT and sTfm
2
configurations provide a 𝑘𝑒𝑓𝑓
much higher than the sfT and sTf configurations; fs and fp are the series
and parallel frequencies of the ZGVR extracted by the admittance frequency spectrum (the frequencies
2 is larger than K2
corresponding to the maximum conductance and maximum resistance [32]). The 𝑘𝑒𝑓𝑓
since the present simulation accounts for the electrodes parameters (material constants and finite
thickness) and the ZnO acoustic loss [33].
Figure 9. The absolute admittance vs frequency curves of the ZGVR of 5-5 composite plate, for the
four coupling configurations.
Figure 10 shows the K2 dispersion curves of the qS0 mode, for the four coupling configurations: the a-
SiC thickness is fixed (5μm) while the ZnO thickness, i.e. the graph's abscissa, varies in the same
range exploited for the ZGV2 of figure 8. Both the ZGV2 and qS0 modes can be excited on the same
plate (with equal λ) with good and comparable K2, mostly for the smfT and sTfm configurations. The
qS0 is a propagating mode, as opposed to the ZGV2, thus the design of a one port S0-based LWR will
include an IDT and two reflectors. Moreover, since the phase velocity of the qS0 mode is significantly
lower than that of the ZGV2, the resonant frequency of the qS0-LWR will be much lower than that of
the ZGVR.
9
Figure 10. The K2 vs the ZnO layer thickness curves of the S0 mode, for the four coupling
configurations and for fixed a-SiC thickness (5 μm thick).
Figure 11 shows, as an example, the K2 dispersion curves of the ZGV5 for fixed a-SiC thickness (5
μm) and variable ZnO layer thickness, for the four coupling configurations.
Figure 11. The K2 dispersion curves of the ZGV5 mode of the four coupling configurations.
The K2 of the ZGV5 is much lower than that of the ZGV2 but it shows a similar trend while increasing
the piezoelectric layer thickness.
5. THE ZGV2 PRESSURE SENSOR
The acoustic energy of a ZGV mode is concentrated under the IDT but, if an external pressure is
applied that induces the bending of the membrane, the resonator frequency is expected to change. The
investigation of this feature can be exploited for sensing applications or for evaluating the resonator
stability under variable environmental pressure. By following the calculation procedure outlined in
reference 14, we investigated the major factors determining the pressure sensitivity of the ZGVR
based on mode 2 of the 1-1 composite plate for the smfT configuration: the 1-1 plate was chosen as it
corresponds the highest K2, according to figure 8. The 1-1 ZGV2 and 5-5 ZGV2 are characterized by a
different wavelength value (λ = 10 and 50 μm, respectively) but equal thickness-to-wavelength ratio
(Htot/λ = 2/10 = 0.2 and Htot = 10/50 = 0.2) which corresponds to the highest K2 value, as shown in
figure 8; the 1-1 ZGV2, besides having a K2 equal to that of the 5-5 ZGV2, it has the additional
technological advantage to require thinner layers and thus smaller sized device.
When a membrane is exposed to an external pressure, it resulted strained and the internal pressure
changes. As a consequence, the material constants of the membrane change as well as the thickness
and the geometrical dimensions of the membrane, thus resulting in a resonance frequency shift. The
contributions to the pressure sensitivity of the ZGVRs due to the dependence on the pressure of the
elastic constants, the lateral and vertical strains were studied. 2D and 3D FEM Comsol Multiphysics
analysis has been performed to determine the pressure sensitivity of the ZGVR by two-steps
simulations: 1. 3D stationary study of mechanical deflection of the membrane with symmetric
boundary conditions, under uniform differential pressure; 2. 2D eigen-frequency study of a single pair
of IDT at the H/λ corresponding to the ZGV2, with continuity boundary conditions. Figure 12 shows
the schematic of the ZGV-based pressure sensor; the topological design parameters of the device are
listed in table 1.
10
Figure 12. The schematic of the suspended membrane: the silicon frame is black, the membrane is
gray; the IDT is yellow.
Table 1. The topological design parameters of the plate.
Design parameter
value
Acoustic wavelength, λ
ZnO film thickness, hZnO
a-SiC film thickness, ha-SiC
Device aperture
Number of finger pairs
10 µm
1 µm
1 µm
40 λ
40
Membrane Size
IDT Area, AIDT
Al electrodes thickness
1000 x 1000 µm2
400 x 400 µm2
50 nm
5.1. 3D stationary study of mechanical deflection of the membrane
Figure 13 shows the total displacement of the 1-1 composite plate under 1 kPa uniform pressure
difference: a variable pressure is supposed to be applied to the lower surface of the membrane while
the upper one is maintained at fixed (ambient) pressure. The vertical axis of the membrane
deformation is scaled up by the factor of 10 for graphical reason, otherwise the deformation could not
be clearly observed. Due to the symmetry of the problem, just a quarter of the membrane, with applied
symmetric boundary conditions, is sufficient for the analysis. As it can be seen, most of the
displacement is concentrated in the center of the membrane.
11
Figure 13. The total displacement of the 1-1 composite membrane
under 1 kPa ambient pressure difference. The vertical axis of the
membrane deformation is scaled up by the factor of 10.
The FEM model was used to determine the strain (Sxx, Syy and Szz), stress (Txx, Tyy and Tzz) and
internal pressure Pint = -(Txx +Tyy +Tzz)/3, at the interface of the two layers, as well as at the free
surface of each layer. Figures 14a-c show Sxx, Szz and Pint vs the distance from the center of the
membrane. Each figure shows three curves: the solid and dash curves are referred to the free surface of
the ZnO and a-SiC layer, and the dot-dash curves are referred to the interface between the two layers,
respectively. The gray area represents half the IDT area, AIDT/2: inside this area the Sxx, Szz and Pint are
almost constant.
Figure 14. a) The internal pressure Pint, b) the Szz and c) Sxx strain components vs the distance from
the centre of the membrane; the solid and dash curves are referred to free surface of ZnO and a-SiC
12
layer, and the dot-dash curves are referred to the interface between the two layers, respectively. The
gray area represents half the IDT area, AIDT/2.
The volume average values of the strain and internal pressure, 𝑆𝑥𝑥 , 𝑆𝑧𝑧 and 𝑃𝑖𝑛𝑡 , were derived inside
the ZnO and the a-SiC layers, underneath the IDT area: the data obtained are listed in table 2.
Table 2. The internal pressure, and the 𝑆𝑥𝑥 and 𝑆𝑧𝑧 strain mean values of the 1-1 ZnO/a-SiC plate
subjected to 1kPa uniform constant differential pressure.
layer
ZnO
a-SiC
The 𝑆𝑥𝑥 , 𝑆𝑧𝑧 and 𝑃𝑖𝑛𝑡 represent the layers elongation, the thickness change and the internal pressure
the plate is subjected to, due to the applied differential pressure. As it can be seen from table 2, the 1
kPa pressure induces a remarkable internal pressure (MPa order of magnitude).
The 𝑆𝑥𝑥 , 𝑆𝑧𝑧 and 𝑃𝑖𝑛𝑡 were then calculated for different external pressure values in the 1 to 10 kPa
range.
𝑃𝑖𝑛𝑡 (MPa)
-6.22
-2.93
𝑆𝑥𝑥 (ppm)
41.368
10.444
𝑆𝑧𝑧 (ppm)
-41.256
-6.278
5.2. 2D eigen-frequency study
The eigen-frequency study of the ZGV2 for the 1-1 composite plate was performed for three perturbed
conditions:
1. the IDT wavelength was assumed to be equal to
𝜆𝑝𝑒𝑟𝑡 = 𝜆(1 + 𝑆𝑥𝑥
) (1)
𝑍𝑛𝑂
under the hypothesis that the IDT is positioned onto the free surface of the piezoelectric layer, and
; the two layers thickness and material constants
𝑎−𝑆𝑖𝐶
that the wavelength is not affected by the 𝑆𝑥𝑥
are assumed to be unaffected by the applied differential P.
2. The thickness of each layer was assumed to be equal to
𝑝𝑒𝑟𝑡
ℎ𝑍𝑛𝑂
= ℎ𝑍𝑛𝑂(1 + 𝑆𝑧𝑧
) (2)
𝑍𝑛𝑂
and
𝑝𝑒𝑟𝑡
ℎ𝑎−𝑆𝑖𝐶
= ℎ𝑎−𝑆𝑖𝐶(1 + 𝑆𝑧𝑧
). (3)
𝑎𝑆𝑖𝐶
The wavelength and the materials constants are assumed to be unaffected by P.
3. The two layers elastic constants and mass density were changed according to their pressure
dependence
and
𝑝𝑒𝑟𝑡 = 𝑐𝑖𝑗 + (
𝑐𝑖𝑗
𝜕𝑐𝑖𝑗
⁄
𝜕𝑃
) ∙ 𝑃𝑖𝑛𝑡 (4)
𝜌𝑝𝑒𝑟𝑡 = 𝜌 + (
𝜕𝜌
⁄
𝜕𝑃
) ∙ 𝑃𝑖𝑛𝑡; (5)
the thickness of each layer and the wavelength were assumed to be unaffected by P.
The a-SiC and ZnO pressure derivatives of the elastic constants [34, 35] 𝑐𝑖𝑗 and mass density ρ are
listed in table 3.
13
Table 3: The pressure derivatives of the mass density and elastic constants of ZnO and a-SiC.
material
𝑃𝑟𝑒𝑠𝑠𝑢𝑟𝑒 𝑑𝑒𝑟𝑖𝑣𝑎𝑡𝑖𝑣𝑒 𝑜𝑓 𝑚𝑎𝑡𝑒𝑟𝑖𝑎𝑙 𝑐𝑜𝑛𝑠𝑡𝑎𝑛𝑡𝑠
a-SiC
ZnO
𝜕𝑐11
⁄
𝜕𝑃
3.49
=
𝜕𝑐11
⁄
𝜕𝑃
= 3.8
𝜕𝑐33
⁄
𝜕𝑃
= 3.7
The Murnaghan equation of state
𝜕𝑐12
⁄
𝜕𝑃
= 4.06
𝜕𝑐12
⁄ = 5.2
𝜕𝑃
𝜕𝑐44
⁄ = −0.53
𝜕𝑃
∂ρ⁄∂P = 16.06
(kg/m3GPa)
𝜕𝑐13
⁄
𝜕𝑃
= 4.7
𝜕𝜌
⁄
𝜕𝑃
= 37.8
(kg/m3GPa)
𝑃 = (
𝐵
𝐵′) ∙ [(
𝑉0
𝑉𝑝𝑒𝑟𝑡
𝐵′
)
− 1] (6)
𝜌0 𝜌⁄ caused by the applied pressure P,
was used to calculate the w-ZnO relative mass density change
where ρ and ρ0 are the pressure-perturbed and unperturbed mass density, B (142.6 GPa) and B' (3.6)
are the ZnO bulk modulus and its pressure derivative, B'= B/P; Vpert and V0 are the perturbed and
equilibrium volumes [36].
The Murnaghan equation of state for isotropic elastic solidi [37]
𝑃 = 𝑎 ∙ (𝑓 + 5 ∙ 𝑓2) (7)
was used to evaluate the pressure derivative of the a-SiC mass density, with 𝑓 = 0.5 ∙ {(
𝑉0
𝑉⁄ )
2/3
−
1} and 𝑎 = 3 ∙ 𝑐12 + 2 · 𝑐44.
The pressure derivatives of the mass density for both the ZnO and a-SiC layers were also calculated
by 3D FEM stationary study. The ZnO and a-SiC mass density, as a function of Pint, was deduced by
the plate volume change V0/Vpert = ρ/ρ0, being Lx, Ly and Lz the equilibrium membrane sides along the
axis system, V0 = Lx·Ly·Lz the unperturbed volume, 𝑉𝑝𝑒𝑟𝑡 = 𝑉0 ∙ (1 + 𝑆𝑥𝑥) ∙ (1 + 𝑆𝑦𝑦) ∙ (1 + 𝑆𝑧𝑧) the
perturbed volume. The a-SiC and ZnO mass density evaluated by the two methods for different
pressure values are very close, as shown in figure 15. The discrepancy between the data obtained with
the two methods is from 7·10-3 to about 3·10-2 kg/m3 for ZnO, and from 7·10-4 to 8.7 10-3 kg/m3 for a-
SiC, respectively, in the studied pressure range.
14
Figure 15: The mass density vs pressure curves of a) a-SiC and b) ZnO; the red circle and black
square points were calculated by the Murnagham equation and by Comsol simulation, respectively.
Figure 16 shows the relative resonant frequency shifts of the ZGV2, Δf/f0, induced by 𝑆𝑥𝑥, 𝑆𝑧𝑧 and
vs the applied differential pressure; Δf = fpert -- f0 , f0 = 1841.754 MHz is the unperturbed resonant
𝑃𝑖𝑛𝑡
frequency, and fpert is the pressure-perturbed resonant frequency.
Figure 16: The 𝑆𝑥𝑥, 𝑆𝑧𝑧, 𝑃𝑖𝑛𝑡 -induced ZGVR relative frequency changes vs the applied differential
pressure for the 1-1 composite plate.
15
From figure 16 it appears evident that the ZGV2 relative frequency shifts induced by the changes in
the membrane length, thickness and internal pressure are quite different. The effect provided by the
𝑆𝑧𝑧 changes is positive since the membrane thickness decreases under the applied pressure, and the
wave velocity (and hence the resonant frequency) consequently increases. This effect is dominant over
the others since the ZGV highly dispersive behavior ensures a large sensitivity to any thickness
changes. The contribution related to 𝑆𝑥𝑥 is negative as the wavelength increases under the applied
pressure, and the resonant frequency consequently decreases; it is also marginal since the mode
changes is positive
corresponds to the zero group velocity dispersion. The effect provided by the 𝑃𝑖𝑛𝑡
and smaller than that provided by 𝑆𝑧𝑧 , as opposed to the results shown in ref. 14 where the 𝑃𝑖𝑛𝑡
contribution is dominant and the pressure-induced mass density changes are not accounted for. In the
present simulation the a-SiC and ZnO pressure-induced mass density changes are accounted for: the
mass density contribution has the effect to lower the elastic constants contribution to the mode
velocity increase.
Figure 17 shows the sum of the relative frequency shifts shown in figure 16, (
∆𝑓
⁄ )
𝑓0
=
∆𝑓
+ (
⁄ )
𝑓0
∆𝑓
+ (
⁄ )
𝑓0
, vs the differential pressure. Figure 17 also shows the
𝑆𝑈𝑀
∆𝑓
(
⁄ )
𝑓0
𝑆𝑥𝑥
total frequency shift (
𝑆𝑧𝑧
∆𝑓
⁄ )
𝑓0
𝑃𝑖𝑛𝑡
vs the differential pressure: the ordinate was calculated by
changing, at the same time, the membrane size (thickness and length) and the two layers material
constants (mass density and elastic constants).
𝑡𝑜𝑡𝑎𝑙
Figure 17: The (
∆𝑓
⁄ )
𝑓0
vs the pressure curves of the ZGV2-based sensor
and the (
∆𝑓
⁄ )
𝑓0
𝑠𝑢𝑚
𝑡𝑜𝑡𝑎𝑙
on the 1-1 composite plate.
In the 4 to 10 kPa pressure range, the two curves of figure 17 can be linearly fitted, showing a sensor
sensitivity, i.e. the curve slope, of 9.34 and 10.98 ppm/kPa, respectively. As the two curves are very
16
similar, then we can argue that the net response of the ZGVR-pressure sensor can be approximated, in
the studied pressure range, as the sum of the responses caused by the different contributions.
As an example, figure 18 shows the ZGV2 absolute admittance vs frequency curves for the 1-1 plate
at three differential pressure values (0 Pa, 5 kPa and 10kPa).
Figure 18: The ZGV2 absolute admittance vs frequency curves of the 1-1 plate, for the sfT
configuration; the pressure is the running parameter.
The non-linear behavior of the ZGVR-based pressure sensor, shown in figure 17, is in agreement with
that of the high-frequency (f0 = 10.77 GHz) one port SAWR-based pressure sensor implemented on
AlN(300 nm)/diamond(20 μm) suspended substrate, when a pressure variation in the range from 0 to
100 kPa is applied, as described in reference 20.The rough side of the diamond free standing layer was
glued with an epoxy adhesive to an alumina bulk substrate (few hundreds of μm thick) with a hole in
the middle. The pressure underneath the hole was kept constant at atmospheric pressure, while a
variable pressure was applied to the upper surface of the membrane. The SAWR-based sensor has a
pressure sensitivity (0.31 ppm/kPa) lower than that of the ZGVR-based sensor, but it has a smaller
surface area (the periodicity of the finger pairs is 800 nm, the number of periods was 100 for both the
IDT and the reflectors).
In reference 21 a fully implantable wireless pressure sensor is presented that works in the 0 to 26.66
kPa pressure range and shows a sensitivity of about 12 ppm/kPa. The sensor device consists in a 5.3
by 4 mm thin quartz diaphragm on which a one-port SAWR has been implemented that works at about
868 MHz. Since the total space occupied by an implantable sensor also includes the antenna, it is
important to minimize its size. The small size of the sensor based on ZGV2 1-1, as well as its
compatibility with integrated circuit technology and its sensitivity to low pressures, make it a suitable
candidate for the design of implantable devices.
In reference 22 the effect of the diaphragm shape (circular and rectangular) on the pressure sensitivity
of an AlN/SOI-based SAWR sensor was investigated in the 0 to 1724 kPa pressure range, and an
improved sensitivity from 0.0055 to 0.025 ppm/kPa was found. This result suggests us to study the
effects of the membrane shape on the pressure sensitivity of the ZGV-based sensor, as well as the
optimization of the IDT design parameters, also including the presence of reflectors to compensate a
possible deviation of the theoretical thicknesses from the calculated ones.
6. Conclusions
The propagation characteristics of the ZGV Lamb modes along c-ZnO/a-SiC composite plates have
been modelled for different ZnO and a-SiC layer thicknesses. The phase and group velocity, and the
17
K2 of four coupling configurations have been theoretically studied specifically addressing the design of
enhanced-coupling, microwave frequency electroacoustic devices that are reliable to fabricate by
conventional sputtering technologies and microlithography technique. Quite good K2 corresponds to
both the qS0 and the ZGV2, for the same-thickness plate, but the former has a resonant frequency
significantly lower than that of the ZGVR, and requires a larger device area including the IDT and two
reflectors. The pressure sensitivity of the ZGV2 resonator was studied for the 1-1 plate subjected to a
uniform differential pressure varying in the 1 to 10 kPa range. A ZGVR sensitivity of about 9 ppm/kPa
was predicted in the 4 to 10 kPa range where the relative frequency change vs the pressure curve can
be linearly fitted.
The present study was performed to demonstrate proof of concept of ZGVRs in pressure sensing
applications. The c-ZnO/a-SiC-based ZGV2 sensors are proven to achieve remarkable performances
(high sensitivity and enhanced coupling efficiency) that are important prerequisite for the design of
future devices to be used in the context of chemical, biological and physical quantities detection.
Further studies are in progress to improve the device performances, based on the IDT design
parameters (such as single electrode and multiple-split electrodes) and the membrane shape.
Acknowledgment
This project has received funding from the European Union's Horizon 2020 research and innovation
programme under the Marie Sklodowska-Curie Grant Agreement No. 642688.
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20
|
1802.07393 | 1 | 1802 | 2018-02-21T01:26:11 | A lateral-type spin-photodiode based on Fe/x-AlOx/p-InGaAs junctions with a refracting-facet side window | [
"physics.app-ph"
] | A lateral-type spin-photodiode having a refracting facet on a side edge of the device is proposed and demonstrated at room temperature. The light shed horizontally on the side of the device is refracted and introduced directly into a thin InGaAs active layer under the spin-detecting Fe contact in which spin-polarized carriers are generated and injected into the Fe contact through a crystalline AlOx tunnel barrier. Experiments have been carried out with a circular polarization spectrometry set up, through which helicity-dependent photocurrent component, dI, is obtained with the conversion efficiency F ~ 0.4 %, where F is the ratio between dI and total photocurrent Iph. This value is the highest reported so far for pure lateral-type spin-photodiodes. It is discussed through analysis with a model consisting of drift-diffusion and quantum tunneling equations that a factor that limits the F value is unoccupied spin-polarized density-of-states of Fe in energy region into which spin-polarized electrons in a semiconductor are injected. | physics.app-ph | physics | A lateral-type spin-photodiode based on Fe/x-AlOx/p-InGaAs
junctions with a refracting-facet side window
Ronel Christian Roca*, Nozomi Nishizawa, Kazuhiro Nishibayashi, and Hiro Munekata*
Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute
of Technology, Yokohama 226-8503, Japan
*E-mail: [email protected]
A lateral-type spin-photodiode having a refracting facet on a side edge of the device is
proposed and demonstrated at room temperature. The light shed horizontally on the side of
the device is refracted and introduced directly into a thin InGaAs active layer under the
spin-detecting Fe contact in which spin-polarized carriers are generated and injected into the
Fe contact through a crystalline AlOx tunnel barrier. Experiments have been carried out with
a circular polarization spectrometry set up, through which helicity-dependent photocurrent
component, I, is obtained with the conversion efficiency F 0.4 %, where F is the ratio
between I and total photocurrent Iph. This value is the highest reported so far for pure
lateral-type spin-photodiodes. It is discussed through analysis with a model consisting of
drift-diffusion and quantum tunneling equations that a factor that limits the F value is
unoccupied spin-polarized density-of-states of Fe
in energy region
into which
spin-polarized electrons in a semiconductor are injected.
1
1. Introduction
Spin-optoelectronics, or spin-photonics, is an emerging sub-field of spintronics that aims
at adding spin-based functionality on conventional optoelectronic devices.1,2) While most of
the effort is focused on the development of circularly polarized light (CPL) sources such as
spin light-emitting-diodes (spin LED)3,4) and spin lasers,5) the development of a CPL
detector, the spin photodiode (spin-PD), is just as important. The spin-PD does not require
external optical delay modulators and thus simple, and furthermore, it can convert
helicity-based signals into electrical signals with wide bandwidth transmission, which is
essential in spin-based optical communication.6,7) Up to now, most studies on spin-PDs
involves vertical-type devices.6-12)
The vertical-type devices are advantageous for coupling with external optical
components due to their large active area and compatibility with optical interconnects.6)
However, this configuration restricts the choice of magnetic metals to those that exhibit
perpendicular magnetic anisotropy (PMA). Additionally, since light is incident onto the top
surface of the spin-PD, unless a window is formed in the magnetic metal contact, magnetic
circular dichroism (MCD) due to the magnetic contact is inherently present in their
measurements,12) and results in spurious detection of helicity of light. On the other hand, for
a lateral-type device on which light is incident onto the side edge of the device, the PMA
requirement is relaxed, and MCD contribution can be suppressed to a great extent.13) Most
importantly, the lateral-type devices are better suited for intra-chip device-to-device optical
communications, as well as monolithic integrated circuits which contain multiple
optoelectronic devices (emitters and detectors) in a single chip. So far, a few studies have
been reported for lateral-type spin-PDs, incorporating oblique angle incidence.13-15)
In the previous studies, the figure of merit F = ∆I / Iph has been introduced,8,14) in which ∆I
= Iph(σ+) Iph(σ) and Iph = [Iph(σ+) Iph(σ)] / 2. Here, σ and σ represent right and left
CPL, respectively. In the present study, we call F as the helicity conversion efficiency. Due
to recent advances, F as high as 5 % has been reported for vertical type devices at room
temperature (RT),8,9) whereas F 0.1 % has been reported for a pure edge-illuminated
lateral-type device at RT.13) More recently, an improved value of F 1 % has been reported
for lateral-type devices with oblique angle illumination.14,15) In particular, the experiment
with the incident angle of 60 14) has suggested that direct illumination on the cleaved edge
may involve some effects that degrade the process of spin transport near the cleaved edge,
such as surface recombination and trapping of photo-generated carriers/spins.
In this work, we propose a lateral-type spin-PD having a refracting facet side
2
window.16,17) Shown in Fig. 1 (a) is a schematic of the proposed spin-PD. The light
illuminated directly on the side of the device is bent by the refracting facet and sent directly
onto the active layer below a spin-detecting magnetic contact where spin-polarized carriers
are generated and transported to the magnetic contact through a tunnel barrier. This
configuration is expected to circumvent the problem associated with the cleaved edge.
Moreover, due to the illumination geometry, it is expected that the contribution of MCD is
much less than those of purely vertical and oblique angle geometries.14,15) Besides, the
refracting-facet structure is also expected to exhibit improved high speed response.17) A
Schottky-barrier-type junction with a p-type InGaAs layer is adopted on the basis of
consideration that the transport length of photo-generated, spin-polarized electrons should
be kept as short as possible; in other words, the layer that converts light helicity into electron
spins should be placed as close as possible to the spin-detecting metal contact. In addition, a
crystalline -like AlOx tunnel barrier is inserted in between the metal and the p-InGaAs
layers, aiming at suppressing the annihilation of photo-generated electrons around the
interface.18) Namely, the tunnel barrier in the present device is expected to take roles of
suppressing the non-radiative recombination as well as the interface chemical reaction
between ferromagnet metal and semiconductor layers. Furthermore, the tunnel barrier may
also improve spin detection efficiency by avoiding the conduction mismatch problem in
semiconductor-based spintronic devices.19-21)
Characterization of fabricated, refracted-facet spin-PDs has been carried out at RT with a
circular polarization spectrometry set up, through which helicity-dependent photocurrent
component with the experimental helicity conversion efficiency F 0.4% is demonstrated
without the application of an external magnetic field. This value is the highest reported so far
for pure-lateral-type spin-PDs. A model calculation is also presented, and the mechanism
that limits the F value is discussed together with possible solutions.
2. Experiment
Crystalline oxide - semiconductor structures were grown by molecular beam epitaxy. A
280-nm-thick epitaxial p-GaAs:Be (NA 5×1017 cm3) buffer layer was first grown at the
substrate temperature of Ts = 580°C on a p-GaAs:Zn (001) substrate (NA 1019 cm3). This
was followed by the growth of a 400-nm or 40-nm thick p-In0.05Ga0.95As:Be (NA 5×1017
cm3) active layer at Ts = 510°C. The wafers were then cooled to Ts = 80°C or lower at which
a seed Al epitaxial layer was grown on top of the p-InGaAs:Be layer. The Al epilayer was
oxidized in dry air atmosphere at room temperature to yield a 1-nm crystalline -like AlOx
3
(-AlOx) layer. Details of the growth of -AlOx can be found elsewhere.22)
The 480-μm-wide, magnetic stripe contacts consisting of Fe (100 nm)/Ti (10 nm)/Au (20
nm) layers were formed on -AlOx/p-semiconductor wafers by standard vacuum deposition
and photolithography techniques; Fe and Ti layers were deposited by e-beam evaporation,
whereas a Au layer by resistive evaporation. The bottom contacts were formed by resistive
evaporation of a 40-nm thick indium layer on the back side of the wafer.
The refracting facet was then fabricated by an anisotropic wet chemical etching using a
H2SO4:H2O2:H2O (1:8:1) solution. It is known that the etch rate is fastest for the [11-1]
direction and slowest for the [111] direction.23) Prior to the etching, magnetic contact stripes
were completely covered by 520-μm-wide stripe photoresist. A more detailed description of
the device fabrication can be found elsewhere.24) The refracting-facet spin-PD thus prepared
has a facet angle of 𝜃𝑓𝑎𝑐𝑒𝑡 68° with respect to the wafer plane with 2° variation [Fig. 1
(b)]. The oblique angle of a light beam impinging on a p-InGaAs layer is 19.5°. A light
beam of 100 m width along the z direction results in the 290-m long, photo-excitation
area along the x direction [Fig. 1 (a)], which is narrower than the width of a magnetic
contact. The estimated inclination of light intensity along the x axis over the width of 290
m is around 20 %.
Fabricated refracted facet wafers were annealed at 230 °C for 1 hour in the N2
atmosphere, and were cleaved into individual spin-PD chips having approximately 1 mm
square with a magnetic contact dimension of 480μm × 1 mm. The stripes' long axis was
aligned along the [1-10] direction, as shown in Fig. 1 (b) and (c).
Shown in Fig. 2 (a) is the optical measurement setup. A light beam is shed on a refracting
face widow along the GaAs [110] axis (the x axis in the figure). A Tsunami Ti:Sapphire
pulse laser, with pulse width of 150 fs and repetition rate 80 MHz, was used in order to
vary the central excitation wavelength from 840 (1.48 eV) to 930 nm (1.33 eV). Figure 2 (b)
depicts photographically the way how a spin-PD was mounted on a sample stage. A linearly
polarized light beam from the laser was converted into a CPL beam by using a
Glan-Thompson linear polarizer (LP) and a quarter-wave plate (QWP). Helicity switching of
the beam between left (σ) and right (σ+) CPL was carried out by manually rotating the QWP.
The CPL beam of radium approximately 450 μm was shed on the refracting facet using a
lens of focal length f = 30 cm and NA = 0.033. Measurements were carried out using the
lock-in technique with a mechanical chopper operating at 400 Hz. The average light power
impinged on the chip was adjusted to have a constant value of 3.6 mW (28 nJ/cm2 per pulse)
for all measurements. The corresponding peak photon flux per pulse is around 1.3 × 1011
4
photons/cm2 at the wavelength λ = 900 nm. Shown in Fig. 2 (c) is the dark and illuminated
I-V curves of a fabricated spin-PD with a 400-nm-thick InGaAs active layer. The I-V curve
shifts down when a light beam (λ = 900 nm, average power 3.6 mW) is shed on the
refracting facet window, yielding a photocurrent of around 16 µA at 0 V (short circuit
condition). The fill factor25) of 0.31 is estimated, which suggests the presence of a finite
amount of leak current in the spin-PD. For the CPL-specified photocurrent (CPL-ph)
measurements, a 500-Ω load resistor is connected in series to the spin-PD. A load line based
on the total resistance,11) 𝑅𝑡𝑜𝑡𝑎𝑙 = 𝑅𝑙𝑜𝑎𝑑 + 𝑅𝑆𝑃𝐷 (RSPD 500 ), is also depicted in Fig. 2
(c), through which a photocurrent of 8 µA with a photo-voltage of 10 mV is expected.
The CPL-ph measurements were carried out by switching the helicity of a light beam
several times between σ to σ+ while keeping the remanent magnetization direction
unchanged. The values of 𝐼𝑝ℎ (𝜎+) and 𝐼𝑝ℎ (𝜎−) were determined by time-averaging the
value of measured CPL-ph for typically 50 s. Measurements were also carried out under the
opposite remanent magnetization (M) direction. The shape anisotropy in the plane is small,
as exemplified by the M-H curves taken across {the [110] axis, Fig. 2 (d)} and along {the
[1-10] axis, Fig. 2 (e)} the long side of a stripe. Therefore, nearly full magnetization value
is kept at the remanent M state after switching the original M by applying an opposite
external field (400 Oe). The CPL-ph is measured in the form of lock-in output voltage
across the resistor. See appendix section for the relation between pulse excitation and
time-averaged photocurrent.
3. Results and discussion
3.1 CPL specified photocurrent
Shown in Fig. 3 (a) is the temporal profile of the measured photocurrent Iph for two
different remanent magnetization states, in which the magnetization vector pointing towards
the light source (Rem) and the other with magnetization pointing reversely (Rem) for a
refracting-facet spin-PD with d = 400 nm. No bias voltage was applied on the tested spin-PD.
For the profile measured with the Rem state (blue profile), the Iph value increases
(decreases) when the helicity of the incident laser beam is changed from to ( to )
polarization. When the measurement is carried out with the Rem state (red profile), the
relative change upon switching the light helicity is reversed. These results indicate that the
presence of helicity-dependent photocurrent in the proposed device configuration.
A slight drift, in the order of less than 1%, is observed in particular for the –Rem data. We
5
infer that this comes from the slight but unavoidable mechanical drift of a mirror (not shown)
used to steer the incident laser beam onto the device. We estimate, on the basis of the
distance between the device and the mirror (85 cm), that the angular drift in the order of 10-6
deg. causes approximately 1% change in the measured photocurrent. We tried to eliminate
this effect by designing the run sequence with an odd number of measurement windows (i.e.
σ+ σ σ+ σ σ+) such that the drift is averaged out. A similar run sequence, made
for the same purpose, has been utilized in Ref. 1.
Shown in Fig. 3 (b) is the wavelength dependencies of photocurrent Iph and helicity
conversion efficiency F. No external bias voltage is applied. The wavelength was varied
from 840 to 930 nm while keeping the incidence power at 3.6 mW. It can be seen that the Iph
and F are both maximized at λ = 900 nm (hv = 1.38 eV), indicating that photogeneration of
spin-polarized carriers occurs primarily in a p-InGaAs layer but not in a p-GaAs layer and a
substrate. In detail, both Iph and F decrease with increasing the wavelength, which is
consistent with reduced absorbance toward the fundamental absorption edge of
In0.05Ga0.95As (Eg = 1.35 eV, λ = 920 nm). The Iph value significantly dropped at λ = 930 nm.
Both Iph and F also decrease with decreasing the wavelength from λ = 900 to 880 nm and
shorter (hv ≥ 1.41 eV). In this wavelength region, light absorption starts taking place in the
p-GaAs region, which reduces the number of photogenerated electrons in the p-InGaAs
layer. The reduction rate of the F value towards the shorter wavelengths is more severe
compared to that of Iph. This is because of the rather short spin diffusion length (𝜆𝑠𝑝𝑖𝑛 1.3
μm) compared to the relatively long minority carrier diffusion length of 21μm in p-GaAs.14)
The F value obtained at λ = 900 nm is F 0.4%, which is around four times larger than that
obtained from the lateral spin-PD without a refracting-facet window.14)
The width of the depletion region increases when the reverse (negative) bias is applied on
the spin-PD, under which photogenerated spin-polarized electrons are expected to be
transported more efficiently towards the magnetic contact [inset of Fig. 4 (b)]. Shown in Fig.
4 (a) are the plots of Iph and ∆I as a function of the applied bias voltage. It is clearly seen that
both Iph and ∆I increase with increasing the reverse (negative) bias voltage. When a positive
bias is applied, both Iph and ∆I decrease, as expected. On the other hand, as shown in Fig. 4
(b), the F value remains nearly constant with different bias voltages. We infer that the
observed bias independence of F is because the spin relaxation length is not affected by the
voltage within the limit of the present work (𝑉 < 1 V ).26, 27)
Note that the InGaAs active layer has a lattice mismatch to GaAs of ∆a/aGaAs = 0.38%,
which gives rise to the critical layer thickness of 40 nm.28) Namely, the tested spin-PD with
6
an active layer of 400 nm is inferred to have threading dislocations throughout the InGaAs
layer and misfit dislocations at the InGaAs/GaAs interface. We therefore tested anther
refracting-facet spin-PD with InGaAs thickness d = 40 nm. Results of CPL-ph experiments
for the 40-nm spin-PD clearly exhibit the presence of I signals with less noise, as shown in
Fig. 5 (a). However, dramatic increase in F value is not observed [Fig. 5 (b)]. This fact
suggests that the F values in the present devices are not primarily limited by misfit
dislocations and associated crystalline defects.
3.2 Analysis based on spin-charge transport
A model for spin-charge transport consisting of drift-diffusion29-31) and quantum
tunneling32, 33) transports is developed in order to seek ways to further improve the F value.
As shown in Fig. 6, a source light beam enters from the backside of an InGaAs layer, and
reflected back at the metal-oxide-semiconductor interface. These two processes, depicted by
the illumination with first (𝛷1) and second (𝛷2) beams, yield photo-generated electrons
∗ that has a downward gradient
∗ is spin-split when a CPL beam is
whose population is represented by the quasi Fermi level 𝐸𝐹
towards the edge of the depletion region (z = 41 nm): 𝐸𝐹
shed as exemplified in inset Fig. 6. A change in the helicity of 𝛷2 due to magnetic circular
dichroism (MCD) of a Fe electrode is as small as 5.0 × 10−3 , and thus negligible.14)
∗ is a predominant transport process in the neutral
Diffusion driven by the gradient of 𝐸𝐹
region (z 41 nm), whereas a drift process participates in the transport in the depletion
region (0 z 41 nm) in which an electric field of 𝐸𝑑𝑝= 1.4 × 105 V/cm is present. In this
region, the charge transport time, 𝑡𝑑𝑝 ≈ 𝑤/(𝜇𝑒𝐸𝑑𝑝), is reduced down to around 1014 s
which is much shorter than spin relaxation time. Furthermore, the charge/spin transport
direction is parallel to the direction of 𝐸𝑑𝑝. Because of these reasons, we assume no
degradation in spin polarization during the transport across the depletion region. Finally,
electrons/spins that reach at the -AlOx/p-InGaAs interface are injected into a Fe electrode
through an oxide tunnel barrier.
One-dimensional drift-diffusion equations shown by Eqs. (1) and (2) with ∆𝑛 = ∆𝑛↑ +
∆𝑛↓ and ∆𝑠 = ∆𝑛↑ − ∆𝑛↓ are utilized to simulate the transport in a semiconductor. We
neglect the inclination of light intensity along the x axis for simplicity.
𝜕∆𝑛
𝜕𝑡
= 𝐷𝑒
𝜕2
𝜕𝑧2 ∆𝑛 + 𝜇𝑒𝐸𝑑𝑝
𝜕
𝜕𝑧
∆𝑛 −
∆𝑛
𝜏𝑟𝑒𝑐
∗ + 𝐺,
(1)
7
𝜕∆𝑠(𝑃)
𝜕𝑡
= 𝐷𝑒
𝜕2
𝜕𝑧2 ∆𝑠(𝑃) + 𝜇𝑒𝐸𝑑𝑝
𝜕
𝜕𝑧
∆𝑠(𝑃) −
∆𝑠(𝑃)
𝜏𝑠𝑝𝑖𝑛
∗ + 𝐺𝑠𝑝𝑖𝑛(𝑃).
(2)
Here, 𝐷𝑒 ( 62 cm2/s) is the electron diffusion coefficient, 𝜇𝑒 the electron mobility
[ 2400 cm2/(V·s) ],34) 𝜏𝑟𝑒𝑐
∗ = (
−1
1
𝜏𝑟𝑒𝑐
+
1
𝜏𝑛𝑟
)
the effective minority carrier recombination
time incorporating the bulk minority carrier radiative recombination time 𝜏𝑟𝑒𝑐 ( 7.2 ×
10−8 s)35,36) and the non-radiative recombination time 𝜏𝑛𝑟 , and 𝜏𝑠𝑝𝑖𝑛
∗ = (
1
𝜏𝑠𝑝𝑖𝑛
+
−1
∗)
1
𝜏𝑟𝑒𝑐
with the bulk, spin relaxation time 𝜏𝑠𝑝𝑖𝑛 ( 2.3 × 10−10 s).36) 𝐺 is the
time-averaged carrier generation rate, expressed by 𝐺(𝑧) = 𝛼𝛷(𝑧)/𝑠𝑖𝑛(𝜃) with 𝛷(𝑧) =
𝛷1 + 𝛷2, 𝜃 20° the incident angle of the light with respect to the x-axis, whereas 𝛼 104
the representative absorption coefficient above the fundamental absorption edge. 𝐺𝑠𝑝𝑖𝑛 is
the spin generation rate that has the relation 𝐺𝑠𝑝𝑖𝑛 = 𝑃 ∙ (0.5 ∙ 𝐺) with P = 1 for σ on
the basis of the optical selection rule.37) Note that 𝜏𝑛𝑟 is a sample-dependent unknown
parameter in these equations. Setting a drift-diffusion photocurrent 𝐽𝑑−𝑑 at z = 0 (the
boundary condition), relation between 𝐽𝑑−𝑑 and photogenerated electrons n is calculated
with various 𝜏𝑛𝑟 by the conventional finite difference method (FDM).38) The size of a
finite segment is set ∆𝑧 = 1 nm. The calculated 𝐽𝑑−𝑑 is then compared with the
experimental photocurrent to find the probable 𝜏𝑛𝑟 value. Results of calculations with
𝜏𝑛𝑟 = 1.7 × 10−12 s, the likely value in our tested device, are exemplified in
Supplemental Material. Energy position of the nominal quasi-Fermi level at z = 0 is shown
in Fig. 6 by a dot placed on a vertical line of -AlOx / p-InGaAs interface, which indicates no
significant charge/spin accumulation at the interface.
Quantum tunneling equation, as shown by Eq. (3), is utilized to simulate the transport
across the oxide barrier. It is important that current conservation condition is imposed
across the entire region of metal-oxide-semiconductor: namely, 𝐽𝑑−𝑑 = 𝐽𝑡𝑢𝑛𝑛𝑒𝑙 at z = 0.
𝐽𝑡𝑢𝑛𝑛𝑒𝑙 = 𝐴 ∫{𝐷𝑠𝑐𝑓𝑠𝑐(𝐸 − 𝐸𝐹
∗)𝐷𝑚[1 − 𝑓𝑚(𝐸 − 𝐸𝐹)]
−𝐷𝑚𝑓𝑚(𝐸 − 𝐸𝐹)𝐷𝑠𝑐[1 − 𝑓𝑠𝑐(𝐸 − 𝐸𝐹
∗)]}𝑇(𝐸)𝑑𝐸.
(3)
Here, 𝐴 is constant with the unit of cm-4·C·eV·s-1, D the density-of-states (DOS), 𝑓(𝐸) the
∗ the quasi-Fermi level for electrons in a semiconductor, and
Fermi distribution function, 𝐸𝐹
𝑇 the tunneling probability; the subscripts 𝑠𝑐 and 𝑚 represent the semiconductor (SC) and
metal (M) sides of the junction, respectively. We estimate T = 0.052 0.033 on the basis of
8
the WBK approximation39,40) with a barrier height of 1.55 0.1 eV 22) and barrier thickness
of 1 0.2 nm. Owing to a small number of time-averaged photo-generated carriers (see
Supplemental Material), the range of integral in the Eq. (3) can be reduced down to the
bottom of the conduction band 𝐸𝐶 using the effective DOS of the SC conduction band,
𝑁𝐶, and Boltzmann distribution: namely,
𝐽𝑡𝑢𝑛𝑛𝑒𝑙 ≈ 𝐴𝐷𝑚(𝐸𝐶)𝑇(𝐸𝐶) ∫ 𝐷𝑠𝑐𝑓𝑠𝑐(𝐸 − 𝐸𝐹
∗) 𝑑𝐸
≈ 𝐴𝐷𝑚(𝐸𝐶)𝑇(𝐸𝐶)𝑁𝐶 exp (
∗
𝐸𝐶−𝐸𝐹
𝑘𝐵𝑇
) = 𝐴𝐷𝑚(𝐸𝐶)𝑇(𝐸𝐶)∆𝑛. (4)
Shown in Fig. 7 (a) are the plots of 𝐽𝑑−𝑑 as a function of ∆𝑛 for three different 𝜏𝑟𝑒𝑐
∗
values, 7.2 108, 1.0 1010, and 1.7 1012 s with 𝜏𝑛𝑟 values of 𝜏𝑛𝑟 , 1.0 1010,
and 1.7 1012 s, respectively. A plot of 𝐽𝑡𝑢𝑛𝑛𝑒𝑙 is also presented in the figure. Solutions of
∗ values are obtained at the intersection of 𝐽𝑑−𝑑 and
Eqs. (1) and (4) for different 𝜏𝑟𝑒𝑐
𝐽𝑡𝑢𝑛𝑛𝑒𝑙 curves. Results of calculations are re-plotted in the form of the J-T relation in Fig 7
(b), and compared with the experimental 𝐽𝑒𝑥𝑝 10 mA/cm2. Within the limit of T = 0.052
0.033, we are able to find 𝜏𝑟𝑒𝑐
∗ 𝜏𝑛𝑟 = 1.7 1012 s for the 400-nm spin-PD. This
value is close to that of the non-radiative recombination near the metal-semiconductor
interface.41,42)
Let us finally examine the spin transport in tunneling, which is expressed as:
𝐽↑↓ ≈ 𝐴𝐷𝑚
↑↓𝑇 ∫{𝐷𝑠𝑐𝑓𝑠𝑐(𝐸 − 𝐸𝐹
∗↑↓) 𝑑𝐸 ≈ 𝐴𝐷𝑚
↑↓𝑇∆𝑛↑↓.
(5)
The total current is expressed as:
𝐽 = 𝐽↑ + 𝐽↓ = [𝐴𝑇
(𝐷𝑚
↓)
↑+𝐷𝑚
2
∆𝑛] + [𝐴𝑇
(𝐷𝑚
↓)
↑−𝐷𝑚
2
∆𝑠] = 𝐽0 + 𝐽𝜎.
(6)
The first term 𝐽0 indicates purely charge current and takes the form similar to that of Eq. (4)
with 𝐷𝑚 =
(𝐷𝑚
↓)
↑+𝐷𝑚
2
, whereas the second term 𝐽𝜎 represents the helicity-dependent
component of the photocurrent. From Eq. (6), it is straight forward that the
helicity-dependent photocurrent can be expressed as:
∆𝐽 = 𝐽(𝜎+) − 𝐽(𝜎−) = [𝐽0 + 𝐽𝜎(𝜎+)] − [𝐽0 + 𝐽𝜎(𝜎−)]
= 𝐴𝑇(𝐷𝑚
↑ − 𝐷𝑚
↓)∆𝑠(𝑧 = 0).
(7)
We now recognize that the difference in unoccupied DOS between the spin-up and -down in
Fe, ∆𝐷 = 𝐷𝑚
↑ − 𝐷𝑚
↓, is an important quantity that determines the efficiency of spin-PDs.
In the calculation, DOS for Fe in the energy range equivalent to the conduction band edge of
a InGaAs is assumed to be around 1.4 1023 cm-3 eV-1,43) and the coefficient 𝐴 around
1.410-30 cm-4·C·eV·s-1.
9
Shown in Fig. 7 (c) is calculated helicity dependent photocurrent ∆𝐽 as a function of ∆𝐷
for 𝜏𝑟𝑒𝑐
∗ 1.7 10-12 s. Referring the experimentally measured ∆𝐽𝑒𝑥𝑝 0.04 mA/cm2, we
are able to extract the ∆𝐷 value of around 1.2 1021 cm-3 eV-1 with ∆𝑠(𝑧 = 0) = 4.8
108 cm-3. The ∆𝐷 value thus obtained amounts to 0.85 % out of the total DOS of Fe,
which is quite small in view of a ferromagnet. We point out, however, that spin cross-over
in the density-of-states may occur in the energy region in which spin polarized electrons
are injected: it is around 1 eV above the Fermi level.43-46) This argument is not yet
conclusive, since we ignore other experimental factors that may give rise to reduction of
𝐽; namely, degradation of spin polarization due to poor magnetic quality of Fe near the
interface47) and/or presence of a spin-independent, leak current. Assuming the ideal fill
factor of 1 and Fe DOS spin polarization of ∆𝐷/𝐷𝑚 0.4, F > 10% is expected.
Our analysis for spin-PD utilizing minority carrier injection suggests that one of the
most direct ways to improve ∆𝐽 is to increase ∆𝐷 by using a ferromagnet whose empty
DOS have half-metallic character at the energy range sufficiently higher than the Fermi
level. For p-GaAs based spin-PD, Co2FeMnSi quaternary alloy would be one of the
candidates, since this material may have relatively high spin polarization (P > 0.8) at the
energy range that is 1 eV higher than the Fermi level.48) Another possible scenario is to
suppress a process of non-radiative recombination near the metal-oxide-semiconductor
junction. For this approach, improvement in the crystalline quality of an ultrathin -AlOx
tunnel barrier should be pursued. This approach will increase both ∆𝐽 and 𝐽𝑝ℎ, but the
ratio F would not be improved significantly. It is also interesting to look into a tunnel
barrier that exhibits spin-filter effect (e.g. MgO). In this scenario, tunneling probability is
not equal (𝑇↑ ≠ 𝑇↓ ) between two different spins, and thus an enhanced ∆𝐽 value is
expected.
4. Conclusions
We have proposed a lateral-type spin-photodiode incorporating a refracting facet window
on the side wall of the diodes, and have presented results of experiments at room temperature
together with model calculations. Experimental results show helicity-dependent
photocurrent component with helicity conversion efficiency F 0.4%, which is the highest
reported so far for the pure, lateral-type spin-photodiodes. Through model calculations,
small spin polarized DOS of Fe is suggested as one of the possible origins for the relatively
small F value. Possible directions for future studies have also been suggested.
10
Acknowledgments
The authors would like to acknowledge support in part by the Advanced Photon Science
Alliance from the Ministry of Education, Culture, Sports, Science and Technology
(MEXT) and the Matching Planner Program from Japan Science and Technology Agency
(JY290153). R.C.R. acknowledges the scholarship from MEXT. N.N. acknowledges the
support by the Japan Society for Promotion of Science (JSPS) Grant-in-Aid (KAKENHI)
No. JP17K14104 and a research granted from the Murata Science Foundation.
11
Appendix
Schematically shown in Fig. A.1 are the expected temporal profiles of incident pulse
photon flux 𝛷(𝑡) , decay function of photogenerated electrons D(t), and resulting
photocurrent 𝐽(𝑡). The light pulse arrives at time t = t0, whereas 𝐽(𝑡) starts increasing as
the pulse arrives, reaches its maximum at t = t0, and then decays. The decay process is
described by the decay function D(t) = exp(−𝑡/𝜏𝑟𝑒𝑐
∗) for t ≥ 0, in which 𝜏𝑟𝑒𝑐
∗
is the
lifetime of electrons. The relationship between 𝐽(𝑡) and 𝛷(𝑡) can be represented
mathematically using the convolution operation49) and is described by
𝐽(𝑡) = 𝑒𝐶 ∙ (𝛷 ∗ 𝐷) = 𝑒𝐶 ∙ ∫ 𝛷(𝑡1) ∙ 𝐷(𝑡 − 𝑡1)
∞
0
𝑑𝑡1 .
(A.1)
Here, 𝑒 is the magnitude of the electron charge, 𝐶 is a constant in units of cm2 and 𝑡1 is
a dummy variable for integration (note that the functions 𝐽, 𝛷, and 𝐷 are only defined
for 𝑡 ≥ 0 ). The value of 𝐶 can be determined experimentally via time-resolved
photocurrent measurements but this is beyond the scope of the present work. It is shown in
the discussion section that 𝜏𝑟𝑒𝑐
between pulses Tpp is about 12.5 ns ( 10-8 s) and the pulse width is 𝜏𝑝 150 fs ( 10-13 s).
∗ is in the order of 10-12 s, whereas the time interval
Since Tpp ≫ 𝜏𝑒𝑓𝑓, we can treat each pulse as isolated.
In experiment, the measurable output is the time average of 𝐽(𝑡), namely 〈𝐽〉:
〈𝐽〉 =
1
𝑇𝑝𝑝
𝑇𝑝𝑝
∙ ∫
0
𝐽(𝑡)
𝑑𝑡 ,
(A.2)
where we take the average during one period Tpp. Substituting Eq. (A.1) into (A.2) yields:
〈𝐽〉 =
1
𝑇𝑝𝑝
𝑇𝑝𝑝
∙ ∫
0
𝑒𝐶 ∙ (𝛷 ∗ 𝐷)
𝑑𝑡 ≈
𝑒𝐶
𝑇𝑝𝑝
∙ ∫ (𝛷 ∗ 𝐷)(𝑡)
∞
0
𝑑𝑡.
(A.3)
Here, the assumption that the pulses are isolated allows us to change the limits of the
integration to infinity. Note that although 𝐽(𝑡) is time-varying, 〈𝐽〉 is time-independent
(quasi-steady-state) and can directly be used to estimate the steady-state solution of Eq. (1).
Furthermore, the form of Eq. (A.3) allows us to utilize the integration property of
convolutions, which yields:
〈𝐽〉 ≈
𝑒𝐶
𝑇𝑝𝑝
∞
∙ ∫ (𝛷 ∗ 𝐷)
𝑑𝑡 =
0
𝑒𝐶
𝑇𝑝𝑝
∞
∞
∙ [∫ 𝛷(𝑡)
𝑑𝑡] ∙ [∫ 𝐷(𝑡)
𝑑𝑡]
0
0
≈ 𝑒[𝐶 ∙ ∫ 𝐷(𝑡)
∞
0
𝑑𝑡] ∙ [
1
𝑇𝑝𝑝
∙ ∫ 𝛷(𝑡)
𝑇𝑝𝑝
0
𝑑𝑡] = 𝑒𝜂 ∙ 〈𝛷〉. (A.4)
Here, we again utilize the assumption of isolated pulses to change the limits of integration
and gather all the terms in the first square bracket into a constant 𝜂, which is just effective
quantum efficiency in the present work, whereas the second bracket is simply the time
average of the photon flux, which is equal to the time-average value used in the experiment.
12
The value of quantum efficiency 𝜂 is directly affected by the effective lifetime 𝜏𝑟𝑒𝑐
∗.
From the experimental data, we estimate 𝜂 to be around 3%. In other words, we are able
to directly correlate the time-average values of 𝐽(𝑡) with 𝛷(𝑡) even for the case of pulse
excitation, using the steady-state solution of Eq. (1). Note that a similar analysis can be
done for the solution of Eq. (2).
13
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16
Figure Captions
Figure 1 (a) Schematic cross section of a refracting-facet spin-PD. Arrows in a Fe layer
represent direction of remanent magnetization which is parallel to the x axis. A light beam
is shed horizontally from the left side on the refracting facet. (b) Side view of the cleaved
edge of a fabricated refracting-facet spin-PD observed by scanning electron microscopy
(SEM). The facet angle 𝜃𝑓𝑎𝑐𝑒𝑡 is approximately 68° with respect to the x axis that is
parallel to the GaAs [110] axis. Facet height and etch depth are approximately 70 and 112
μm, respectively. Red arrows represent beam directions in a spin PD. (c) Bird's-eye-view of
the same spin-PD observed by SEM. Blue and red arrows represent the GaAs [1-10] and
[110] axes, respectively.
Figure 2 (a) Schematic illustration of circular polarization (CP) spectrometry setup. CP is
generated by passing a light beam from a Ti:Sapphire laser through a linear polarizer (LP)
and a quarter-wave plate (QWP). The CP laser beam is focused onto the sample with a spot
size of radius ≈ 450 μm using a lens with the focal length f = 30 cm and NA = 0.033. (b) A
picture of a tested spin-PD that is fixed on a copper sample holder by firmly pressing it
with a Cu metal finger. (c) I-V curves of a tested spin-PD having a 400-nm thick InGaAs
layer in the dark (blue) and under the illumination (red) with a light beam of the
wavelength λ = 900 nm. Straight line represents a load resistance line (green). M-H
hysteresis curves obtained from a tested spin-PD with (d) magnetic fields applied along (d)
the GaAs [110] axis (the x-axis) and (e) the GaAs [1-10] axis (the y axis). Magnetic
characteristics are nearly same for both curves.
Figure 3 (a) Temporal profiles of CPL-specified photocurrent measured with a light beam
of wavelength λ = 900 nm for a spin PD comprising a 400-nm thick InGaAs layer. + Rem
and – Rem indicate magnetization vector point towards + and –x axis, respectively. Data
obtained with + / – Rem state are separated vertically for graphic clarity. Dashed lines
(black) are drawn for eye guides. (b) Photocurrent 𝐼𝑝ℎ and helicity conversion efficiency F
as a function of wavelength of an impinged light beam. Vertical dashed lines (black)
crossing λ = 870 and 920 nm denote, respectively, the band gap energy of GaAs and
InGaAs.
17
Figure 4 (a) Plots of measured photocurrent 𝐼𝑝ℎ (blue) and helicity-dependent
photocurrent ∆I (red) as a function of applied bias voltage. (b) A plot of measured F values
as a function of applied voltage. Inset of (b) shows band edge profiles with application of
reverse bias.
Figure 5 (a) Temporal profiles of CPL-specified photocurrent for spin-PD incorporating
40-nm thick InGaAs layer qmeasured either with + or – Rem state. The wavelength of a
CPL beam is λ = 900 nm. Data are separated vertically for graphic clarity. Horizontal
dashed lines (black) are drawn for eye guides. (b) A plot of measured F values as a function
of applied voltage for a 40-nm spin-PD.
Figure 6 Schematic band edge profiles in spin-PD. The labels C.B. and V.B. stand for
conduction and valence band edge, respectively. Thickness of light absorbing p-InGaAs
layer (NA = 5 × 1017 cm3) is set at 400 nm. Diffusion potential across the
Fe/AlOx/p-InGaAs junction is around 0.6 V which is distributed between the AlOx tunnel
barrier (VB 0.02 V) and the Schottky depletion layer (VSch 0.58 V). The width of the
depletion region is w 41 nm with the Schottky barrier height of ϕSch 0.58 eV. Tunnel
barrier height is ϕB 1.55 eV from the conduction band edge. 𝐸𝐹 and 𝐸𝐹
∗ represent the
Fermi level in the dark and quasi-Fermi level under the illumination with light, respectively.
Two half-parabolas at the most left side of figure represent schematically spin-polarized
DOS of Fe. A dark arrow represents the first light beam 𝛷1 entering an InGaAs layer,
whereas a light arrow does the second beam 𝛷2 that is reflected back at the -AlOx /
p-InGaAs interface. Graded intensities of 𝛷1 and 𝛷2 are schematically shown by broken
∗↓, when CPL is shed on spin-PD.
lines. Inset shows a split of the Fermi level, 𝐸𝐹
∗↑ and 𝐸𝐹
Illumination with intensity of 3.6 mW results in ∆𝐸𝐹
p-InGaAs/p-GaAs interface.29) A dot on the vertical line of -AlOx / p-InGaAs interface
∗↓ = 11 meV at the
∗ = 𝐸𝐹
∗↑ − 𝐸𝐹
indicates the position of nominal EF* representing the number of photogenerated electrons
at z = 0.
18
Figure 7 (a) Calculated drift-diffusion current 𝐽𝑑−𝑑 and tunneling current 𝐽𝑡𝑢𝑛𝑛𝑒𝑙 as a
function of photo-generated electron concentration ∆𝑛 at z = 0. For 𝐽𝑑−𝑑, three different
∗ 7.210-8 s (blue diamonds), 1.010-10 s (green
effective recombination lifetimes, 𝜏𝑟𝑒𝑐
triangles), and 1.710-12 s (red squares) are assumed. Self-consistent solutions are given by
the intersections of 𝐽𝑑−𝑑 and 𝐽𝑡𝑢𝑛𝑛𝑒𝑙 curves. (b) Calculated photocurrent 𝐽 as a function
∗ values; 7.210-8 s (blue diamonds),
of the tunneling rate 𝑇 with four different 𝜏𝑟𝑒𝑐
1.010-10 s (red squares), 1.710-12 s (green triangles) and 1.010-13 s (purple crosses).
Horizontal dashed line expresses the experimental photocurrent value of J 10 mA/cm2. A
hatched region in orange represents tunneling probability T = 0.052 0.033. (c) Calculated
helicity-dependent photocurrent ∆𝐽 as a function of the difference in DOS ∆𝐷 between
spin-up and
-down bands. Horizontal dashed
line
indicates
the experimental
helicity-dependent photocurrent value ∆𝐽𝑒𝑥𝑝 0.04 mA/cm2, whereas vertical dashed line
indicates extracted ∆𝐷 value of around 1.21021 cm-3 eV-1.
Figure A.1 Schematic illustrations of temporal profiles of pulsed photon flux 𝛷(𝑡), the
decay function D(t), and resulting photocurrent 𝐽(𝑡). The form for 𝐽(𝑡) represents the
convolution of 𝛷(𝑡) and D(t). The light pulse arrives at time t = t0.
19
Fig. 1. (Color online)
20
Fig. 2. (Color online)
21
Fig. 3. (Color online)
22
23
Fig. 4. (Color online)
Fig. 5. (Color online)
24
25
Fig. 6. (Color online)
26
Fig. 7. (Color online)
Fig. A.1 (Color online)
27
|
1905.11630 | 2 | 1905 | 2019-12-20T08:27:02 | Rapid flipping of parametric phase states | [
"physics.app-ph",
"cond-mat.mes-hall"
] | Since the invention of the solid-state transistor, the overwhelming majority of computers followed the von Neumann architecture that strictly separates logic operations and memory. Today, there is a revived interest in alternative computation models accompanied by the necessity to develop corresponding hardware architectures. The Ising machine, for example, is a variant of the celebrated Hopfield network based on the Ising model. It can be realized with artifcial spins such as the `parametron' that arises in driven nonlinear resonators. The parametron encodes binary information in the phase state of its oscillation. It enables, in principle, logic operations without energy transfer and the corresponding speed limitations. In this work, we experimentally demonstrate flipping of parametron phase states on a timescale of an oscillation period, much faster than the ringdown time \tau that is often (erroneously) deemed a fundamental limit for resonator operations. Our work establishes a new paradigm for resonator-based logic architectures. | physics.app-ph | physics | Rapid flipping of parametric phase states
Martin Frimmer,1 Toni L. Heugel,2 Ziga Nosan,3 Felix Tebbenjohanns,1 David Halg,3 Abdulkadir Akin,3
Christian L. Degen,3 Lukas Novotny,1 R. Chitra,2 Oded Zilberberg,2 and Alexander Eichler3, ∗
1Photonics Laboratory, ETH Zurich, CH-8093 Zurich, Switzerland.†
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2Institute for Theoretical Physics, ETH Zurich, CH-8093 Zurich, Switzerland.
3Laboratory for Solid State Physics, ETH Zurich, CH-8093 Zurich, Switzerland.
(Dated: December 23, 2019)
We experimentally demonstrate flipping the phase state of a parametron within a single period
of its oscillation. A parametron is a binary logic element based on a driven nonlinear resonator. It
features two stable phase states that define an artificial spin. The most basic operation performed
on a parametron is a bit flip between these two states. Thus far, this operation involved changing
the energetic population of the resonator and therefore required a number of oscillations on the
order of the quality factor Q. Our technique takes a radically different approach and relies on rapid
control of the underlying potential. Our work represents a paradigm shift for phase-encoded logic
operations by boosting the speed of a parametron bit flip to its ultimate limit.
Introduction. Since the invention of the solid-state
transistor, the overwhelming majority of computers fol-
lowed the von Neumann architecture that strictly sepa-
rates logic operations and memory [1, 2]. Today, there
is a revived interest in alternative computation models
accompanied by the necessity to develop corresponding
hardware architectures [3 -- 6]. For example, phase-based
logic architectures can be realized with artificial spins
such as the parametron that arises in driven nonlinear
resonators [7 -- 17]. The parametron encodes binary infor-
mation in the phase state of its oscillation. It enables,
in principle, logic operations without energy transfer and
the corresponding speed limitations [18].
The parametron is a logic device employing the princi-
ple of parametric driving [11, 19 -- 24]. Consider a res-
onator whose natural frequency f0 is modulated at a
drive frequency 2fd. If fd is chosen close to f0, and the
modulation is sufficiently strong, the resonator experi-
ences a negative effective damping and is forced to oscil-
late at fd with large amplitude, as illustrated in Fig. 1(a).
With the frequency of the motion being half that of the
modulation, the resonator undergoes a spontaneous time-
translation symmetry breaking [25, 26]. As a result, the
system is locked to one of the two available phase states
that are degenerate in amplitude but separated by π in
phase (relative to a clock running at fd). In phase space
spanned by normalized displacement X and momentum
Y [27], this locking mechanism can be illustrated by the
quasi-potential landscape shown in Fig. 1(b). The quasi-
potential features a double-well structure, where each
well corresponds to a stable phase state. The two phase
states of the parametron represent a classical bit or, anal-
ogously, an Ising spin. In the lab frame, the states rotate
around the phase-space origin at the drive frequency fd
[Fig. 1(c)].
While the parametron was already patented at the
dawn of the digital era [7, 8], it is only with recent ex-
perimental advances that an implementation of the con-
cept appears useful. Research groups using nanome-
chanical resonators, Josephson junction circuits, and
optical parametric oscillators have devised prototypical
parametron-based Ising machines that may solve NP-
hard problems much faster than conventional comput-
ers [13 -- 15, 17, 24, 28]. The most basic logic opera-
tion on a parametron is a bit flip, corresponding to a
phase change of π of the underlying resonator. Thus far,
parametrons have been flipped by first depleting the res-
onator and then re-energizing it in the opposite phase
state [13, 21]. The flipping speed of this method is lim-
ited by the ring-down time τ = Q/(πf0), where Q (cid:29) 1 is
the quality factor of the resonator. This speed limitation
is directly related to the energy gap between energized
and depleted states. However, flipping the phase state of
a parametron does not strictly require energy transfer.
Indeed, the two logic states are degenerate in energy and
protected by a 'phase gap' [18]. It should therefore be
possible to devise a protocol to flip between the phase
states at a speed much faster than the ringdown time
τ , which is often (erroneously) deemed a fundamental
limit for resonator operations [29, 30]. Despite the fact
that such a protocol would unlock the full potential of
phase-encoded logic, an experimental demonstration has
remained elusive to date.
In this paper, we experimentally demonstrate flipping
between the two phase states of a parametron within a
single oscillation period. Our technique allows logic op-
erations on a time-scale of 1/f0, and therefore Q times
faster than the ring-down time. Our protocol temporar-
ily freezes (or slows down) the evolution of a resonator
to bridge the phase gap separating its phase states. The
speed of our method relies on the fact that it does not
require energy transfer into or out of the system. The
demonstrated protocols are platform independent. We
present two complementary variations of our phase-flip
paradigm on different experimental systems and assess
their performances. Our results call for a reevaluation
of the fundamental limits for high-speed and low-energy
computation using parametron bits.
idea for
Phase-flip protocols. The general
rapid
parametron phase flipping is illustrated in Fig. 1(d). The
resonator is initially in one of the two stable phase states.
Without limitation of generality, let us consider the red
phase state with phase φ = π. At t = 0, the resonator
evolution is frozen (or slowed down), such that it acquires
a phase delay relative to its initial state. Careful timing
results in a delay of exactly π. Upon release, the res-
onator resumes oscillation in the blue phase state with
phase 0. In the following, we consider two methods to
achieve such a phase delay by π. They make use of 'po-
tential deformation' and 'potential displacement', corre-
sponding to a change in the restoring force and to the
application of an external force, respectively.
Phase flip via potential deformation. We first demon-
strate rapid parametron phase flipping via potential de-
formation, corresponding to switching the underlying res-
onator's natural frequency f0. As an experimental plat-
form, we use a silica nanoparticle optically levitated in a
FIG. 1:
Parametron phase states and basic idea of rapid
phase flipping. (a) Parametric driving corresponds to a har-
monic modulation of the resonator's natural frequency f0.
Solid (dashed) lines represent the modulated (original) po-
tential. If the drive is sufficiently strong, the resonator locks
to fd and settles into one of two stable phase states that are
separated by π, illustrated as oscillating red and blue spheres.
(b) In phase space, the parametrically driven resonator expe-
riences an effective double-well potential, which is the key
signature of the parametron. The phase states now appear
as stationary red and blue spheres in the quasi-potential min-
ima. (c) Simplified illustration of the parametron in phase
space. In the lab frame, the two states rotate around the ori-
gin at frequency fd. (d) Illustration of rapid phase flip. The
parametron is initialized in the red phase state (φ = π). At
time t = 0, the phase evolution of the system is paused for
half an oscillation period by freezing the resonator's position.
Upon release, the parametron resumes oscillation in the blue
phase state (φ = 0).
2
focused laser beam in vacuum, as illustrated in Fig. 2(a)
(see [31] and Supplemental Material for details). The
light scattered by the particle provides us with a mea-
surement of its position. Each degree of freedom of
the particle's center-of-mass represents a nonlinear res-
onator [32]. To minimize the effect of thermal fluctua-
tions, we feedback-cool all three degrees of freedom to
a temperature of 1 K. Throughout this work, we fo-
cus on a single oscillation mode with a resonance fre-
quency f0 ∼ 164 kHz. The power spectral density of
the feedback-cooled mode under consideration is shown
in Fig. 2(b).
Weak periodic modulation of the trapping laser inten-
sity turns the levitated particle into a parametron.
In
contrast, a sudden and strong reduction of the laser in-
tensity leads to a deformation of the potential and can
be used for phase flips. Consider the particle confined
in a potential of natural frequency f0 under parametric
driving at 2fd [with fd ∼ f0), such that the parametron
is locked to one of the two stable phase states (Figs. 2(c-
d)]. When the particle reaches its maximum displace-
ment (and its velocity vanishes), we reduce the power of
the trapping laser to switch the natural oscillation fre-
quency to f0/2 for a time τdef. If we choose τdef = 1/f0,
the particle has time to travel to the opposite side of the
potential. At this moment, we switch the laser intensity
(and thus the trap stiffness) back to its original value
and the particle continues to oscillate at a frequency fd.
Importantly, relative to the clock at fd, the phase state
of the parametron has been flipped by π during the pro-
tocol.
We show an experimental demonstration of our idea in
Fig. 2(e), where we plot the phase state of the optically
levitated parametron as a function of time. The measure-
ment signal is the output of a lock-in amplifier fed with
the position signal. The trap frequency is switched twice
per second from f0 = 164 kHz to 82 kHz for a duration
τdef = 8.1 µs. Indeed, we observe two phase states sep-
arated by π and flipping between them at the expected
rate of 2 Hz. The phase flips happen instantaneously on
the timescale set by the 220 Hz bandwidth of our lock-in
detection.
A striking feature in Fig. 2(e) is the failed phase flip
around 8 s, indicating that the success probability Pflip
of our potential deformation scheme is less than unity
(we define Pflip as the ratio of observed phase flips to
flipping attempts). We attribute this observation to the
fact that we did not choose the nominally ideal value of
τdef = 6.1 µs. To corroborate this hypothesis, we record
Pflip for varying τdef. In Fig. 2(f), we observe that Pflip
is indeed a periodic function of τdef with the expected
period 2/fd. When τdef is an even multiple of 1/fd, the
parametron phase remains unaltered by the pulse and
Pflip vanishes. In contrast, for τdef equal to an odd mul-
tiple of 1/fd, Pflip approaches unity. We note that a
pulse of length τdef = 2/fd can be interpreted as a se-
XYabdc-101X-20201t (1/fd)fdφ (π)fd-44Xpot.XYquasi pot. 3
FIG. 2: Experimental demonstration of phase flip via potential deformation. (a) Experimental setup. A silica nanoparticle
(diameter 136 nm) is trapped in a focused laser beam (wavelength 1064 nm) inside a vacuum chamber (not shown). The stiffness
of the optical potential can be modulated with an electro-optic modulator (EOM). The particle displacement is detected with
a quadrant photo diode (QPD). (b) Thermally driven power spectral density Sx of the particle displacement. From the red line
fit, we extract a quality factor Q = 1970. (c) Schematic illustration of the phase-flip protocol. The parametron is initialized in
the red phase state. When the particle reaches its maximum displacement, we reduce the resonator frequency from f0 (potential
sketched as solid line) to f0/2 (dashed line) by attenuating the laser intensity with an acousto-optic modulator (AOM). We then
let the particle evolve for the pulse length τdef = 1/f0, such that the phase states of the parametron undergo a full oscillation,
while the particle only traverses the trap and acquires a phase delay of π. (d) Same as (c) but illustrated in phase space.
(e) Measured phase of the parametron as a function of time. A switch of the potential as outlined in (c) and (d) is applied at
a rate of 2 Hz with τdef = 8.1 µs, periodically flipping the parametron phase state. Note the failed flip around 8 s. (f) Flipping
probability Pflip for varying pulse length τdef. Our model (black line) takes into account the finite thermal population of the
resonator (see Supplemental Material). Error bars represent statistical uncertainty.
quence of two back-to-back pulses of length 1/fd. The
data in Fig. 2(f) therefore demonstrate that it is possi-
ble to fully exploit the switching speed of our method by
concatenating several rapid phase-flips.
Figure 2(f) reveals that the transitions of Pflip(τdef) be-
tween zero and unity are not infinitely sharp but display
a finite width of about 2 µs, which we attribute to ther-
momechanical fluctuations. The solid line in Fig. 2(f)
indicates a model calculation of Pflip based on thermal
phase noise (see Supplemental Material). This model re-
produces our data well for τdef > 5 µs. We attribute the
deviations between data and model for short τdef to the
finite response time and the resulting transients of the
modulator that switches the laser power.
We note that in our experiment, we triggered a phase
flip when the resonator displacement was at its max-
imum. The protocol is, however, applicable with any
starting condition (see Supplemental Material). Indeed,
under the applied potential deformation, a harmonic os-
cillator with initial phase state (X, Y ) will always evolve
towards −(X, Y ) within half a period. By extension, the
protocol is applicable to arbitrary mixtures of states, in-
cluding thermal states. Finally, we point out that the
flipping time of our protocol could be further reduced to
1/(2fd) by completely turning off the trapping potential.
For our particular experimental situation, switching off
the potential also reduces the parametric drive to zero.
On the short time scale of the flipping process, this is not
problematic because parametric locking is only effective
on time scales of the order of τ . However, the scheme
implemented in this work is significantly more resilient
against inevitable thermal fluctuations of the particle mo-
tion which can lead to particle loss.
Phase flip via potential displacement.
In the follow-
ing, we demonstrate that rapid parametron phase flips
are also possible by displacing the potential, correspond-
ing to the application of a force to the resonator. We
experimentally realize this method with the electrical LC
circuit illustrated in Fig. 3(a) (see [33] and Supplemental
Material for details). Here, the resonator displacement
corresponds to the charge separated across the varicap
diode with capacitance C, and the role of the force is as-
sumed by a voltage Uflip. We characterize our resonator
in the linear regime by applying a weak drive tone Udrive
whose frequency we sweep around f0 while recording the
output voltage Umeas, as shown in Fig. 3(b). The circuit
becomes a parametron under sufficiently strong driving
close to 2f0.
We use this system to realize the phase-flipping scheme
detailed in Figs. 3(c-d). When the resonator displace-
ment reaches its maximum value, a force is applied to
counter the restoring force and to freeze the resonator
051001φ (π)t (s)cefaddetectordriveflip104102Sx(pm2/Hz)162164freq. (kHz)166bparticleDAQ0102001Pflipτdef (µs)AOMEOMfdfdfdfdf0/2fdfd0π−πXpot.YX 4
FIG. 3: Experimental demonstration of phase flips via potential displacement. (a) Schematic of the electrical LC resonator
circuit with a varicap diode to provide a nonlinear capacitance C. (b) Linear response of the resonator to a small external
driving voltage (Udrive = 50 mV). From the red line fit we extract f0 = 3.3 MHz and Q = 245. (c) Illustration of the phase-flip
protocol. The parametron is initialized in the red phase state. When the resonator reaches its maximum displacement at t = 0,
the potential is displaced by an external force (from dashed to solid lines) such that the resonator is momentarily at rest. At
t = 1/(2fd), the force is turned off and the parametron resumes its evolution, now in the blue phase state. (d) Same as (c)
but illustrated in phase space. (e) Demonstration of two different phase flips, performed with (i) τdis = 153 ns, the ideal pulse
duration for flipping, and with (ii) τdis = 230 ns. The signal was demodulated by a digital lock-in amplifier and filtered for
clarity (see Supplemental Material). (f) Results of flipping experiments with varying τdis. Each datapoint represents the state
of the resonator directly after a pulse. Here, u = X cos(2πfdt) − Y sin(2πfdt) and v = Y cos(2πfdt) + X sin(2πfdt) are the
phase-space quadratures in a frame rotating at the drive frequency fd. A black circle serves as a guide to the eye.
evolution. This equals a displacement of the potential by
the oscillation amplitude, such that the resonator tem-
porarily finds itself at the potential center. After the
force is turned off, the resonator has acquired a phase
delay of π relative to its original evolution and is stable
in the opposite phase state.
In Fig. 3(e), we show two examples of the behavior of
the system for different pulse lengths τdis.
In the first
example, the pulse length is set to τdis = 1/(2f0), the
ideal pulse length for a bit flip. Indeed, the parametron
flips its phase state by π (i, blue data points).
In the
second example, we set τdis = 1.5 × 1/(2f0) (ii, green).
Here, the parametron is transferred into a state between
the two stable phase states and evolves towards one of
them on a timescale given by Q/f0 ∼ 74 µs after the flip.
In Fig. 3f, we plot the state of the resonator at t =
0.7 µs after the start of a bit flip in phase space (in a
frame rotating at the drive frequency) for different values
of τdis. The amplitude of the parametron after the flip-
ping protocol (corresponding to the radial distance from
the plot center) is independent of τdis, which results from
the fact that the resonator's evolution is frozen at the
point of maximum displacement and vanishing velocity.
Our data demonstrates that via the choice of τdis we can
transfer the parametron to any point on the unit circle in
phase space, in particular to the two stable phase states.
Discussion and Conclusion. The two experimental
demonstrations in Figs. 2 and 3 establish a new paradigm
for resonator-based logic operations. Parametron phase
flips can be achieved within a single oscillation period
and completely independently from the quality factor
Q. This finding opens up new possibilities for appli-
cations that use parametrons as phase logic units [7 --
9, 11 -- 14, 16, 17, 34 -- 37]. The states of the parametrons
may be initialized and flipped irrespective of the (desir-
able) high quality factors of the underlying resonators,
and the flips do not necessarily involve energy exchange
with a bath. In this way, our schemes reconcile the two
seemingly disparate notions of rapid logic operations and
long state coherence [38, 39]. Beyond computation, rapid
phase flips allow encoding binary information through
phase-shift keying [40]. While current phase-shift keying
techniques use an oscillator with constant amplitude and
phase and achieve different phase-space states through
post-processing, our demonstrations show that informa-
tion encoding on the level of the resonator itself is feasi-
ble. This may enable ultra-compact and low-power en-
coders for specialized applications such as autonomous
nanobots in medical research [41, 42].
There are several factors that significantly relax the
required conditions for large-scale implementations of
our technique. First, the symmetry protection of the
parametron makes the phase-flips very stable in the pres-
3.253.3500.8f (MHz)adUmeasUdriveLC-101-101vufebcUflipUmeas (mV)-1012301t (µs)φ (π)fdfd(i)(ii)fdfdfdfd0π−πXpot.YX ence of phase noise [18]. Consecutive rapid flips result in
the correct state as long as the summed phase error is
below π/2. After a sequence of rapid flips, phase errors
will self-correct through relaxation within the double-
well. Second, the external parametric driving signal can
be utilized as a clock with large signal-to-noise ratio. Es-
timating the momentary state of a parametron is thus
fault tolerant up to π/2, while the amplitude is generally
known.
The physics explored within our work may be trans-
lated to nonlinear high-frequency resonators based on
Josephson junction circuits [17, 22 -- 24], micro- and
nanomechanical resonators such as carbon nanotube and
graphene devices [21, 23, 43 -- 47], optical parametric oscil-
lators in nonlinear media [12, 14, 28], trapped ions [48],
and cold atom lattices [49]. It is thus a highly general
concept that is potentially useful in a wide variety of ex-
periments and future applications.
See Supplemental Material [URL to be inserted] for
experimental details, a model of the bit flip success rate,
as well as Fokker-Planck numerical simulations, which
includes Refs. [50 -- 52].
We are indebted to Peter Marki, Nils Hauff, David
Ruffieux and Can Knaut for valuable discussions and
technical assistance during this project. This research
was supported by ERC-QMES (Grant No. 338763), the
NCCR-QSIT program (Grant No. 51NF40-160591), the
Swiss National Science Foundation (CRSII5 177198/1,
PP00P2 163818), the Michael Kohn Foundation, the
ETH Zurich Foundation, and a Public Scholarship of the
Development, Disability and Maintenance Fund of the
Republic of Slovenia (11010-247/2017-12).
∗ Electronic address: [email protected]
† URL: http://www.photonics.ethz.ch
∗ Electronic address: [email protected]
† URL: http://www.photonics.ethz.ch
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|
1712.03392 | 1 | 1712 | 2017-12-09T14:29:54 | Magnonic waveguide based on exchange-spring magnetic structure | [
"physics.app-ph"
] | We propose to use a soft/hard exchange-spring coupling bilayer magnetic structure to introduce a narrow channel for spin-wave propagation. We show by micromagnetic simulations that broad-band Damon-Eshbach geometry spin waves can be strongly localized into the channel and propagate effectively with a proper high group velocity. The beamwidth of the bound mode spin waves is almost independent from the frequency and is smaller than 24nm. For a low-frequency excitation, we further investigate the appearance of two other spin beams in the lateral of the channel. In contrast to a domain wall, the channel formed by exchange-spring coupling can be easier to realize in experimental scenarios and holds stronger immunity to surroundings. This work is expected to open new possibilities for energy-efficient spin-wave guiding as well as to help shape the field of beam magnonics. | physics.app-ph | physics | Magnonic waveguide based on exchange-spring magnetic structure
Lixiang Wang, Leisen Gao, Lichuan Jin, Yulong Liao, Tianlong Wen, Xiaoli Tang,
Huaiwu Zhang, Zhiyong Zhong1
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of
Electronic Science and Technology of China, 610054, Chengdu, China
Abstract
We propose to use a soft/hard exchange-spring coupling bilayer magnetic
structure to introduce a narrow channel for spin-wave propagation. We show by
micromagnetic simulations that broad-band Damon-Eshbach geometry spin waves
can be strongly localized into the channel and propagate effectively with a proper high
group velocity. The beamwidth of the bound mode spin waves is almost independent
from the frequency and is smaller than 24nm. For a low-frequency excitation, we
further investigate the appearance of two other spin beams in the lateral of the channel.
In contrast to a domain wall, the channel formed by exchange-spring coupling can be
easier to realize in experimental scenarios and holds stronger immunity to
surroundings. This work is expected to open new possibilities for energy-efficient
spin-wave guiding as well as to help shape the field of beam magnonics.
Introduction
Magnonics is an emerging technology for low-power signal transmission and
data processing based on spin waves (magnons) propagating in magnetic materials
[1-4]. Nowadays such magnon-based computing concept is discussed and undergoes
benchmarking in the framework of beyond-CMOS strategies [5], due to its nanometer
wavelengths and Joule-heat-free transfer of spin information over macroscopic
distances [6-8]. In the context of the magnonics [9-14], where the control of spin
waves is sought as a practical means of transmitting and processing information (in
the same vein as the control of light in photonics), the capacity for energy-efficient
propagation of spin waves is essential for any form of circuit design, and is crucial for
wave processing schemes that rely on spin wave interferences [13-17]. In the last few
years, magnonic crystals have been widely studied [10, 18-24]. One of these artificial
crystals is periodically patterned at the nanoscale to promise a degree of control of
spin waves when transmitting through magnetic materials. However, limited by the
current nanotechnology, a considerable challenge for this kind of magnonic crystals is
to fabricate perfect structures precisely and controllably at the submicron or
nanometer scale. Recently, individual domain walls were functionalized as nanoscale
magnonic conduits that allowed for a rewritable nanocircuitry in several papers
[25-30]. A magnetic domain wall acts as a confining potential well, spin waves sent
along the wall can be strongly localized into its center but propagate freely in the
direction parallel to the wall without extra fields. Unfortunately, these specific domain
walls are usually difficult to realize in experimental scenarios. Besides, fragility is
also a considerable problem, since a domain wall structure can be easily invalidated
1Author to whom correspondence should be addressed. Electronic mail: [email protected]
- 1 -
by stray fields from surroundings. Here, we will provide a new possible way to
overcome these challenges. We present a paradigm for spin-wave propagation that
relies on a domain-wall-like magnetic channel as magnonic waveguides. We
emphasize that the channel is naturally induced on a soft/hard bilayer magnetic
structure via exchange-spring coupling interaction, thereby can be easily realized in
laboratory and possesses strong immunity to disturbance from outside. We show
through micromagnetic simulations that a Damon-Eshbach (DE) propagation
geometry sent to the channel can be strongly confined in a narrow area with a broad
frequency band. By targeting the bonded modes, we focus on the potential of using
such magnetic structures as channel inductors for spin-wave guiding to open new
perspectives for efficient spin-wave propagation towards magnonic nanocircuitry.
Micromagnetic modeling
Fig. 1(a) sketches the geometry sizes of the model we used. The model includes
a soft magnetic layer (SL) that is exchange coupled to a hard magnetic layer (HL) at
the bottom surface of the SL [31]. The thicknesses of two layers are 𝑡𝑆𝐿 = 12𝑛𝑚 and
𝑡𝐻𝐿 = 8𝑛𝑚, respectively. The HL magnetization is oriented in the plane-normal
direction to model stripe domains of a width 100nm along the x direction. Periodic
boundary conditions in the y direction are used to model an infinite array of stripe
domains. The SL magnetization is initially randomized with an in-plane random
vector field, and is then allowed to equilibrate at zero applied fields. The whole
simulation process contains two steps, which are stabilizing the system and
propagating spin waves successively. In the second step, an out-of-plane field pulse
was used to locally excite spin dynamics at the channel's position at a distance of
40nm from the left edge (green area in Fig.1b). The OOMMF micromagnetic code
[32] was used to carry out simulations by solving the Landau-Lifshitz-Gilbert
equation.
Values of the magnetic saturation of the SL, 𝑀𝑆
𝑆 = 8.0 × 105 𝐴/𝑚 , the
exchange stiffness 𝐴𝑆 = 13 × 10−12 𝐽/𝑚 and the anisotropy, 𝐾 𝑆 = 0 𝐽/𝑚3 which
were taken from NiFe, were used in our numerical simulations[33]. Similarly,
𝐻 = 3.6 × 105 𝐴/𝑚 , the
standard values of magnetic saturation of [Co/Pd]5, 𝑀𝑆
perpendicular anisotropy, 𝐾𝐻 = 6.3 × 105 𝐽/𝑚3, and the exchange stiffness, 𝐴𝐻 =
6.0 × 10−12 𝐽/𝑚3 [33], are taken to model the HL. The exchange between the SL and
HL was modeled with an intermediate value 𝐴𝑆𝐻 = 9.5 × 10−12 𝐽/𝑚3. The model
size in the x direction was set to 3μm to minimize boundary effects and provide a
sustainable spin-wave propagation. The damping parameter was set at α = 0.5 in the
first step to lead to rapid convergence to get grounded magnetization state but α =
0.01 (was taken from NiFe) in the second step to support spin waves for a
long-distance propagation.
Results and discussions
Here, we focus on the possibility of bringing about an expected magnonic
waveguide based on soft/hard magnetic structure by exchange-spring coupling. Fig.
1b shows the remnant magnetization configuration in the top surface of the SL after
- 2 -
the stabilization of the system. The orientation of arrows represents the magnetization
vectors, with red-green color codes the normalized magnetization component 𝑚𝑦
along the width direction of the model. In the Fig. 1b, one observes a noticeable strip
area (indicated by the dashed box) at y = 200nm along the x axis, which separates
two almost opposite domain patterns. The area is characterized by inside magnetic
moments that are strictly oriented to the y direction. It is particularly similar to a 180°
Ne el wall, but the magnetization within it is in a better order. Besides, we emphasize
that such magnets have been found to display characteristic structure with enhanced
remnant magnetization [33-35], thus the magnetization can exhibit stronger immune
to stray fields compared with a domain wall. In the following, we utilize such specific
strip magnetization as a narrow channel for spin-wave propagation. Due to the
magnetic moments within the channel are perfectly parallel to the y axis, no external
bias fields were needed in our simulations to either induce the channel or propagate
the spin waves.
(a)
(b)
Figure 1 (a) Schematic illustration of the magnetic structure used in simulations. Red-blue areas
in the HL denote the magnetic moments directing up and down, respectively. (b) Stabilized
magnetization configuration on the top surface of the SL, with the discussed channel (indicated by
the dashed box) obtained from the OOMMF simulation. The color of vectors codes 𝑚𝑦 values as
indicated by the color bar. Spin waves were locally excited at the position indicated by the green
dot. The lower right corner sketches the cross section in the y-z plane.
- 3 -
To verify the channeling effect, single-frequency spin waves propagating along
the channel were investigated first. An oscillating magnetic field of ℎ𝑧 = 𝐻0sin (𝜔𝑡)
with 𝐻0 = 100𝑚𝑇 , to render higher phase resolution between neighboring
simulation cells, was applied to the marked position in Fig. 1b to generate spin
dynamics. The 𝑀𝑧 component of the magnetization was plotted at t = 2.0ns after
the excitation to ensure the system reaching a steady state. Fig. 2a shows the
snapshots of spin wave distribution at various frequencies. For the lower excitation
frequencies of 5 and 12GHz, spin waves exist only inside the channel as expected for
a bound mode, justifying that the channel formed by the studied structure can be
indeed served as a waveguide for spin-wave propagation. Similar to a domain wall,
the channeling effect can be understood as following [28]. The perfectly ordered
magnetization within the channel separates two opposite domains, giving rise to
opposite magnetic volume charges on the two sides of the channel. These charges
generate a strong magnetostatic field 𝐻𝑑𝑒𝑚𝑎𝑔 antiparallel to the magnetization within
the channel, resulting in a locally decreased effective field which forms a magnetic
potential well for bond modes. As presented in Fig. 2a, the well in the internal field is
so deep that spin waves can be completely localized into the channel with much
pronounced strength. It is noteworthy that the magnetization of the channel is oriented
along the y direction and thus perpendicular to the propagation direction of the spin
waves, which forms the DE propagation geometry. It is well known that DE spin
waves can be easily generated and controlled, have positive dispersion and, more
importantly, high group velocity [36]. The slight decrease in amplitude for
long-distance propagation is related to the introduction of Gilbert damping α in the
simulations (here α = 0.01 was used). In contrast, once the excitation frequency
reaches 25GHz, spin waves are spread throughout the domains at both sides of the
channel, the channeling effect disappears. The observation can be analogized to the
spin waves propagating in a domain wall [28-30, 37]: spin dynamics with a high
frequency lie in the allowed band instead of the energy gap of the extend spin-wave
modes and, thus are mixed with the extend modes, resulting in the loss of the
channeling effect.
Here, we focus on the spin-wave mode localized inside the channel. The
beamwidth of the well-mode spin wave for various frequencies, which is defined as
the full width at half maximum (FWHM) of the well in 𝑀𝑧, was studied below. As
shown in Fig. 2b, all the calculated data of the beamwidth is smaller than 24nm and is
almost irrelevant to the excitation frequency, which is in good agreement with what is
expected from a waveguide width at nanoscale. Thanks to the perfect confining effect
of the channel, spin waves are strongly squeezed to a narrow alley, resulting in the
weakness of magnetization precession at the lateral edges [38]. In other words, spin
waves propagating along the channel are insensitive to the edge, as the light traveling
in a fiber. Such optic-fiber-like waveguide should have great potential for magnonic
transmission [25-27], since the negligible boundary scattering experienced by the
channeled spin waves will lead to an increased propagating length.
In addition to spatial and spectrum characteristics, we also shed light on the
spin-wave dispersion to get a deeper insight into the well-confined mode. A
- 4 -
symmetric sinc field pulse of ℎ𝑧(𝑡) = 𝐻0
sin (2𝜋𝑓𝑐𝑡)
2𝜋𝑓𝑐𝑡
, ranging from 0 to 25GHz, was
used to the excite spin waves within a frequency range. Two-dimensional fast Fourier
transform (2D FFT) of 𝑀𝑧 is performed along the propagating direction to plot the
dispersion curve [39]. Fig. 2c shows the resulting positive dispersion that enables the
transport of information via spin waves propagating within the channel. Parabolic
dispersion relation with large wave vectors (corresponding to small wavelength)
suggests that the bond mode is mainly dominated by exchange energy. While the wide
frequency range of the dispersion curve illustrates that the critical frequencies, within
which spin waves are permitted to be confined in the channel, can be close to 0 and
22GHz, respectively. The observation of well-defined wave vectors along the
propagation path is a crucial precondition for numerous applications that rely on the
interference of spin waves and highlights the potential of the channel in magnonic
circuits for data processing.
(b)
(c)
(a)
Figure 2 (a) Spin-wave propagation patterns at t = 2.0ns for labeled frequencies. The color
codes the out-of-plane component of the magnetization 𝑀𝑧 as indicated by the color bar. (b) The
beamwidth as a function of frequency. The beamwidth is defined as the FWHM of the SW
amplitude distribution over the waveguide width. (c) Dispersion relation of the well-confined
mode calculated by 2D FFT.
We further investigate the group velocity of the bound mode. An illustration of
wave packet propagating along the channel at labeled times is shown in Fig. 3a. The
wave packets are generated with a field pulse that comprises a sine wave oscillation at
the frequency f = 5GHz. The temporal evolution of the normalized 𝑚𝑧 component
- 5 -
of the wave packet is shown for three instants after the application of the pulse field.
By relating the evolution time ∆t to the propagated distance ∆x we can extract the
wave packet velocity, which 𝑣𝑔 = ∆𝑥/∆𝑡 is approximately 1440m/s for the given
frequency. In fact, the upward curve plotted in Fig. 3b reflects a positive correlation
between the group velocity and frequency, which can be derived from the spin-wave
dispersion relation by 𝑣𝑔 = ∂ω(k)/ ∂k. The group velocity can exceed 1km/s at
1GHz, while over 8GHz the velocity exceeds 1.5km/s. Large value of the propagation
velocity brings competitiveness to the well-defined mode for computing technology,
since the velocity determines the speed of calculation [7].
(b)
(a)
Figure 3 (a) Illustration of wave packet propagating along the channel at various time. (b) The
group velocity as a function of frequency. Green circles are simulation results obtained from
OOMMF, while red dashed line is corresponding numerical results calculated by 𝑣𝑔 = ∂ω(k)/
∂k.
When the excitation frequency applied in the channel was reduced to a very low
value, for example 2GHz, an attractive observation emerged: two other spin-wave
beams parallel to the channel are presented at y = 100nm and 300nm respectively
except for the discussed one (see Fig. 4a for details). Clearly, the appearance of them
suggests the existence of other propagating channels at corresponding positions. To
get a deeper insight of these channels, we extracted the x component of the internal
field 𝐻𝑒𝑓𝑓
𝑥 across the y direction and Fig. 4b (the bottom panel) shows the result.
Two equal-height but antisymmetric peaks on the curve prove that channels for
spin-wave propagation indeed exist there and the potential wells are equal-deep but
their magnetization is opposite (see the top panel in Fig. 4b). Below we label this two
channels as lateral channels (LCs) while the previous one as middle channel (MC) to
distinguish from each other. Note that the magnetic moments in the LCs are oriented
to the x (−x) axis and thus parallel to the propagation direction of spin waves, which
forms the backward-volume-wave propagation [36]. It is quite different from the MC
mode.
- 6 -
(a)
(b)
(c)
(d)
Figure 4 (a) Spin-wave propagation pattern at t = 2.0ns for f = 2GHz. (b) The x component
distribution of the internal field over the width (the bottom panel) and the 3D view of the spin
configuration (the top panel). (c) The dispersion curve of the LC modes for w=400nm. (d) Energy
spectrum of spin waves across the y direction for w = 400 and 320nm.
Again, we should be noted that the LCs modes appear only when the excitation
frequency is lower, they will vanish at a high excitation frequency (Fig. 2a), as
indicated by their dispersion curve in Fig. 4c. We propose to give the explanation as
following. It is well known that spin dynamics are dominated by dipole or exchange
energy depending on the wavelength. For the studied mode with a low-frequency
excitation, which corresponding to a large wavelength (Fig. 2c), spin waves in the
MCs are dominated by dipole-dipole interaction. The dynamic dipole energy
characters a wide functioning range which can cross the barriers between the channels,
powering the spin precession in the LCs. However, when the frequency is at a high
- 7 -
value (corresponding to a small wavelength), exchange interaction charactering
narrow functioning range will take place of the dominating role of dipole-dipole
interaction, resulting in the loss of driving force on the LCs, hence the LC mode
disappears. To verify the words above, we decreased the distance between the
channels from d = 100nm to 80nm and the cut-off frequency of the LCs modes
increased as expected (shown in Fig. 4d). It can be understood that shorter distance
between the adjacent channels allows narrower-range interaction, which characterizes
higher frequency, to drive the LCs modes, accordingly resulting in the higher cut-off
frequency. The appearance of such LC modes is a fantastic observation and might
provide an unprecedented possibility for spin-wave filter design.
Conclusion
In summary, we have demonstrated that a soft/hard exchange-spring coupling
bilayer magnets with certain magnetization can cause a deep potential well for
spin-wave channeling. Because the channel is primarily governed by intrinsic
interplay between two layers, it is less sensitive to experimental scenarios. Spin waves
with a DE propagation geometry exhibit a well-defined wave vector along the channel,
enabling data transport and processing using wave properties. The beamwidth of the
bound mode is smaller than 24nm and is almost independent from frequency, which
can avoid the boundary scattering [38] caused by edge irregularity and the extra
dispersion [40]. In addition, a relative high group velocity exceeding 1km/s promises
the channeled mode a candidate for computing technology. Finally, we have
addressed and qualitatively verified the appearance of LC modes, which provides a
new train of thought for spin-wave filter design. These observations pave the way for
the realization of nano-sized, energy-efficient, reconfigurable magnonic circuits.
Acknowledgment
This paper is supported by the National Key Research and Development Plan (No.
2016YFA0300801); the National Natural Science Foundation of China under grant
Nos. 61734002, 61571079 and 51702042, and the Sichuan Science and Technology
Support Project (Nos. 2016GZ0250 and 2017JY0002).
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|
1901.02456 | 1 | 1901 | 2019-01-08T19:00:00 | Magnetoelectric Coupling by Giant Piezoelectric Tensor Design | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic thin-film bilayers are a promising paradigm for sensors and information storage devices, where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane magnetization rotation with an electric field across the film thickness has been challenging due to the virtual elimination of in-plane piezoelectric strain by substrate clamping, and to the requirement of anisotropic in-plane strain in two-terminal devices. We have overcome both of these limitations by fabricating lithographically patterned devices with a piezoelectric membrane on a soft substrate platform, in which in-plane strain is freely generated, and a patterned edge constraint that transforms the nominally isotropic piezoelectric strain into the required uniaxial strain. We fabricated 500 nm thick, (001) oriented [Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_3$]$_{0.7}$-[PbTiO$_3$]$_{0.3}$ (PMN-PT) unclamped piezoelectric membranes with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic calculations, we designed and fabricated two-terminal devices exhibiting Ni magnetization rotation in response to an electric field across the PMN-PT. Similar membrane heterostructures could be used to apply designed strain patterns to many other materials systems to control properties such as superconductivity, band topology, conductivity, and optical response. | physics.app-ph | physics | Magnetoelectric Coupling by Giant Piezoelectric Tensor Design
J. Irwina,1, S. Lindemannb,1, W. Maengb, J. J. Wangc, V. Vaithyanathand, J.M. Hub,
L.Q. Chenc, D.G. Schlomd,e, C.B. Eomb, M.S. Rzchowskia,2
aDepartment of Physics, University of Wisconsin-Madison
Madison, Wisconsin 53706, United States
bDepartment of Materials Science and Engineering, University of Wisconsin-Madison
Madison, Wisconsin 53706, United States
cDepartment of Materials Science and Engineering, Pennsylvania State University, University
Park, Pennsylvania 16802, United States
dDepartment of Material Science and Engineering, Cornell University,
Ithaca, New York 14853, United States
eKavli Institute at Cornell for Nanoscale Science,
Ithaca, New York 14853, United States
Abstract
Strain-coupled magnetoelectric (ME) phenomena in piezoelectric / ferromagnetic
thin-film bilayers are a promising paradigm for sensors and information storage devices,
where strain is utilized to manipulate the magnetization of the ferromagnetic film. In-plane
magnetization rotation with an electric field across the film thickness has been challenging
due to the virtual elimination of in-plane piezoelectric strain by substrate clamping, and to
the requirement of anisotropic in-plane strain in two-terminal devices. We have overcome
both of these limitations by fabricating lithographically patterned devices with a
piezoelectric membrane on a soft substrate platform, in which in-plane strain is freely
generated, and a patterned edge constraint that transforms the nominally isotropic
piezoelectric strain into the required uniaxial strain. We fabricated 500 nm thick, (001)
oriented [Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 (PMN-PT) unclamped piezoelectric membranes
with ferromagnetic Ni overlayers. Guided by analytical and numerical continuum elastic
calculations, we designed and fabricated two-terminal devices exhibiting Ni magnetization
rotation in response to an electric field across the PMN-PT. Similar membrane
heterostructures could be used to apply designed strain patterns to many other materials
systems to control properties such as superconductivity, band topology, conductivity, and
optical response.
Magnetoelectric coupling piezoelectric strain membrane
1J.I. and S.L. contributed equally to this work
2To whom correspondence should be addressed. E-mail: [email protected]
1
Introduction
Magnetoelectric materials systems possess a wide range of applications including non-
volatile memories, magnetic field sensors, spintronics, tunable RF circuit elements, tunable optics,
and biomedical devices (1 -- 3). Significant effort has been devoted towards the few known
materials exhibiting single-phase room temperature magnetoelectricity, but these materials have
drawbacks such as weak magnetoelectric coupling or small electric polarizations (4). Composite
magnetoelectrics, consisting of a ferromagnet coupled to a piezoelectric via strain, are a well-
studied alternative to single phase magnetoelectrics. Composite magnetoelectrics have the largest
reported magnetoelectric coupling constants and suitable electric polarizations, magnetic coercive
fields, and saturation magnetizations. These characteristics make them highly promising device
candidates, but up to this point they have been challenging to implement in thin-film form (2, 5 --
7). In this work we design, fabricate, and characterize (001)-oriented, epitaxial thin-film
magnetoelectric membrane
heterostructures
based
on
the
piezoelectric material
[Pb(Mg1/3Nb2/3)O3]0.7-[PbTiO3]0.3 (PMN-PT) (8, 9). Giant piezoelectric coefficients and large
electro-mechanical coupling have allowed PMN-PT based composite magnetoelectrics to achieve
superior performance, for example in magnetic field sensors (3). By designing the piezoelectric
tensor we overcome previous limitations intrinsic to thin films, and demonstrate electric field
control of in-plane magnetization at low bias voltages.
The structure presented here overcomes two critical factors limiting thin-film composite
magnetoelectrics. The first limitation arises from substrate clamping that virtually eliminates the
in-plane piezoelectric response of thin films, and the second limitation arises from the in-plane
four-fold symmetry of most (001) piezoelectrics that precludes the anisotropic in-plane strain
necessary for in-plane magnetization rotation. Substrate clamping has limited the majority of
2
composite magnetoelectric research to bulk piezoelectrics (7, 10). Nanoscale patterning has been
shown to partially address this by relaxing the island through its thickness (11), but such nano-
structuring can introduce unwanted defects such as ion implantation and dislocations (12).
Membranes are free from substrate clamping and operate at low voltage while still providing for
high device density. Special crystalline orientations (13, 14), domain switching (15 -- 17), and extra
top electrodes (18) have addressed the in-plane symmetry limitation, but our piezoelectric tensor
design approach directly transforms biaxial piezoelectric strain into uniaxial strain that reorients
in-plane magnetization, eliminating complexity and fabrication challenges. We demonstrate in-
plane magnetization reorientation with out-of-plane electric fields, and develop design principles
that can be used to generate specific strain patterns.
Experimental Approach
The membrane fabrication process starts from an epitaxial PMN-PT / SrRuO3 bilayer on
SrTiO3-buffered Si, and results in a piezoelectric membrane heterostructure on a soft polymer
(Polydimethylsiloxane [PDMS]) coated glass slide (Fig. 1, see Materials and Methods for details).
Growth of high quality epitaxial PMN-PT/SrRuO3/SrTiO3 heterostructures on 4o miscut (001)-
oriented Si substrates has been previously reported (19). A continuous Pt film sputtered onto the
PMN-PT serves as the bottom electrode. The structure is attached Pt side down to soft PDMS
coated glass, then the Si substrate is removed with a XeF2 plasma etch, and the SiO2 by ion-milling.
This leaves behind a sub-micron thick PMN-PT / SrRuO3. The exposed SrRuO3 is patterned into
top electrodes, defining the PMN-PT biased regions. A 35 nm thick Ni layer is deposited and
patterned into regions in which we probe the magnetization rotation via Magneto-optic Kerr Effect
(MOKE) measurements. A protective coating of SU-8 polymer and an overlayer of patterned Au
allows probe tips to contact individual top electrodes. The cross section of the final heterostructure
3
is shown in Fig. 2A.
Structural, ferroelectric and piezoelectric characterization of the PMN-PT was performed
on thin-film and membrane samples. High-resolution four-circle X-ray diffraction shows that the
biaxially strained thin film PMN-PT relaxes towards bulk lattice constants after substrate removal
(SI Appendix, Fig. S1B). Release from the substrate also results in a slight increase in the PMN-
PT (002) rocking curve from 0.4° to 0.5° due to the lattice constant relaxation (SI Appendix, Fig.
S1C). According to polarization-electric field hysteresis loops the PMN-PT has a remnant
polarization of 20 µC/cm2 and a ferroelectric imprint of 50 kV/cm favoring the polarization
pointing towards the SrRuO3 (SI Appendix, Fig. S2A). The longitudinal piezoelectric response of
the membrane was measured to be 1200 pm/V using a double-beam interferometer (SI Appendix,
Fig. S3), comparable to that of 0.7PMN-0.3PT bulk single crystal samples (9).
A key aspect of our membranes is that the PMN-PT layer is continuous, with electrically
biased regions (defined by patterned SrRuO3 top electrodes) embedded in unbiased PMN-PT. A
bias voltage applied between the continuous Pt bottom electrode and the patterned SrRuO3 top
electrode polarizes only this defined region of the PMN-PT, and we find that the intrinsic isotropic
in-plane strain state is transformed by interaction with the surrounding unbiased PMN-PT into the
anisotropic strain required to drive in-plane magnetic anisotropy. Anisotropic strain is present both
inside and outside of the biased region, and the strain direction is spatially varying (Fig. 2B). We
refer to this interaction as boundary clamping and show that it can be used to design an electric
field induced strain that controls the in-plane magnetization orientation in the Ni regions. Our
measurements of membrane composite magnetoelectrics show electric-field induced uniaxial
anisotropy and are in good agreement with our analytical and numerical analyses of the
piezoelectric strain tensor in this constrained geometry.
4
Experimental Results
Longitudinal magneto-optic Kerr effect (MOKE) magnetic hysteresis loops were used to
measure strain-induced magnetic anisotropy in the Ni at different PMN-PT bias voltages. Applying
the magnetic field along an easy magnetic direction will result in a square hysteresis loop as the
magnetization jumps between orientations parallel and antiparallel to the applied field. Applied
field along a hard direction rotates the magnetization away from the easy axis, resulting in a linear
Ni/SrRuO3 rectangle that serves as top electrode for PMN-PT bias. In the top panel the applied
MOKE magnetic hysteresis loop with zero coercivity that saturates at an applied field !"#$. The
uniaxial magnetic anisotropy energy density %& can be estimated from the hard axis data with
%&=()*+"!"#$, where +"is the Ni saturation magnetization, and assuming coherent rotation (20).
field magnetic field is along ,-., parallel to the long edge of a rectangle. As the applied bias is
a magnetic hard direction along ,-.with an anisotropy energy of 1.2 kJ/m3. In the bottom panel of
Fig. 2A the measurement field is rotated by 90° to be along ,-*, parallel to the shorter edge of the
change in loop shape, showing that the ,-* axis remains easy, independent of bias. These two
Ni layer along ,-*. As Ni has a negative magnetostriction constant, ,-* must be the most
measurements confirm that the piezoelectric strain has induced a new uniaxial anisotropy in the
pattern. As the applied bias increases, there is a small change in coercive field but no noticeable
Figure 3A shows the bias dependence of MOKE hysteresis loops of a 300 µm by 200 µm
increased from 0V to 8V, the loops close from square to nearly linear, indicating the formation of
compressively strained direction in the biased region. At zero bias, the hysteresis loops for both
field directions (and all others measured but not shown) are identical, indicating no intrinsic
anisotropy in this sample. Strain-induced uniaxial magnetic anisotropy is expected to immediately
induce a hard-axis response, with a magnetic anisotropy proportional to strain, rather than the
5
gradual loop closing observed experimentally. We believe that our experimental results arise from
strain-induced anisotropy competing against domain wall pinning, consistent with the relatively
large 10 mT Ni coercive field, attributable to growth conditions. Other devices showed the
expected linear increase in anisotropy energy with increasing bias voltage (SI Appendix, Fig. S7).
Figures 3B and 3C show spatial maps of the Ni coercivity measured with MOKE. A
complete hysteresis loop was measured with the laser focused at each 10µm x 10µm pixel and the
magnetic field was aligned 30 from the previously determined strain-induced hard axis direction1.
At zero bias (Fig. 3B), the coercive field is uniform and matches the zero-bias coercive field
measured in Fig. 2A. At a 6V bias (Fig. 3C), the coercive field drops considerably indicating loop
closure and a strain-induced magnetic ansiotropy. The loops don't close completely due to the 30°
misalignment with the hard axis. The coercivity is lower near the center of the pattern, and higher
near the short edges, suggesting a larger anisotropy near the center of the electrode, as expected
based on our analysis below.
In addition to the strains within the biased region of the PMN-PT, there is also significant
strain outside of the biased region. The strain-induced magnetic anisotropies inside and outside of
the biased region are qualitatively different. To probe this difference, we patterned a device with
a grid of 60 µm by 80 µm Ni islands, each free to respond independently to local strains, placed
on and around a 300 µm by 200 µm SrRuO3 electrode. MOKE magnetic hysteresis loops are shown
for two nearby Ni islands at 0V and 5V, one inside (Fig. 4A) and one outside (Fig. 4B) of the
biased region. Both islands have square hysteresis loops at zero bias2 with the applied field along
1Shadowing of the laser by a wire bond prevented measurement with the magnetic field along ,.or ,* so an
along ,-*, in contrast to the Ni in the sample measured in Fig. 3 which was magnetically isotropic.
intermediate angle was chosen.
2 Due to different growth conditions, the Ni in the two islands in Fig. 4a and b have as-grown magnetic anisotropy
6
,-*. At 5V, the Ni island inside the biased region has an unchanged hysteresis loop, matching the
behavior of the larger Ni rectangle shown in Fig. 1A (bottom panel). The Ni island outside the bias
region, under a 5V bias, develops an 0.84 kJ/m3 anisotropy parallel to the long edge and
perpendicular to the anisotropy induced inside the biased region. This 90° difference in anisotropy
is consistent with our detailed analysis presented below, but can also be understood qualitatively:
when the biased PMN-PT compresses inwards, it stretches the unbiased region. The magnetization
in the compressed region aligns parallel to the axis of compression (Fig. 4A, easy axis along ,.),
and in the stretched region aligns perpendicular to the axis of tension (Fig. 4B, easy axis along ,*).
Discussion
Our magnetoelectric measurements demonstrate that piezoelectric strain is responsible for
inducing, via magnetoelasticity (21), a magnetic easy axis along the shorter direction of rectangular
electrodes. This would not occur without the boundary clamping of the biased PMN-PT by the
surrounding unbiased PMN-PT. Here we develop an analysis that relates the piezoelectric strain,
boundary clamping, and magnetic anisotropy, and which allows for the design of an electric field-
dependent magnetic anisotropy pattern in the Ni layer through piezoelectric tensor design.
A bias applied across the thickness of the PMN-PT generates strain in the PMN-PT through
the converse piezoelectric effect. Normal (non-shear) strains in cubic piezoelectrics are
characterized by two piezoelectric tensor components, /00>0 and /0.<0, which in this
field. Because of its tetragonal symmetry when polarized along ,-0, an unconstrained sheet of
PMN-PT responds equally along ,-.and ,-* (i.e. /0.= /0*), creating isotropic strain. However,
geometry respectively describe the elongation parallel and perpendicular to the applied electric
when only a small region of the membrane is biased, its contraction is constrained by the
surrounding unbiased PMN-PT, resulting in anisotropic response. We find that the effect of this
7
boundary clamping can be described with effective (subscript eff) piezoelectric tensor components
of the biased region, with /0*,788≠/0.,788. This modification leads to strain-dependent uniaxial
magnetic anisotropy.
This magnetic anisotropy induced by the applied bias depends on the in-plane components of
the strain tensor, which are spatially varying due to the boundary clamping. Locally, every two-
dimensional strain distribution has a direction of maximum strain and minimum strain, referred to
as the first and second principal strain directions.3 The notation :. and :* is used here to denote
the magnitude of the first and second principal strains. In terms of the principal strains, the induced
%&=−0*<= >?@(:.−:*)
anisotropy energy in the presence of an arbitrary strain distribution is
where <= and >?@ are the saturation magnetostriction constant (-32.9 ppm) and Young's modulus
(1)
(220 GPa) of polycrystalline Ni (21). This means that however complex the strain distribution, it
locally induces a uniaxial anisotropy, with direction and magnitude determined by the principal
strains of the strain tensor. Here the anisotropy axis is parallel to the second principal strain
direction, because this is the most compressed direction and Ni has a negative <=. Figure 2B
schematically shows the principal strains at three infinitesimal regions in the biased and unbiased
regions of a piezoelectric membrane. Upon applying a bias, the gray (undeformed) square patches
directions.
are stretched or compressed into the black rectangular patches, each with its own principal strain
We can estimate the strain difference :.−:* at the center of the biased region from (1)
using the values of %& from our MOKE hysteresis loops. Considering only strain-induced
3 The magnitude and direction of the principal strains are the eigenvalues and eigenvectors of the strain tensor. In the
case of isotropic strain, the eigenvalues are degenerate, and no direction of maximum strain exists. Shear strain
terms vanish upon coordinate transformation into the frame defined by the principal strain directions.
8
anisotropies, the hard axis measurement in Fig. 3A gives :.−:*=110 ppm at 8 V bias, and that
of Fig. 4B gives :.−:*=78 ppm at 5V bias. The effective piezoelectric constants may also be
estimated as the strain difference per applied electric field, giving /0.,788−/0*,788=6.9 pm/V.
Analysis
We find that strain patterns in our piezoelectric membranes can be understood by building on
a continuum elasticity theory first developed by Eshelby (22) to describe the elastic behavior of
precipitates in materials. An exactly ellipsoidal region embedded in an elastic media will strain
anisotropically in response to an isotropic internal stress, with the strain exactly uniform inside the
ellipsoid. The strain is largest along the shortest axis of the ellipsoid. This is in agreement with our
experimental results: the biased regions in our samples undergo uniform stress from their
piezoelectric response, and our MOKE measurements indicate that the largest compressive strain
lies along the shorter axis of rectangular patterns, in agreement with Eshelby's model.
Inside an infinite elliptical cylinder with axes a and b, respectively along ,-. and ,-*, the strain
response to an electric field along the cylinder axis is (23)
:@L=M0
(PQR) SOOT U 00 V W=M0
7NO
(.QX) SOOT 1 00 Y W
7NO
where :@L is the strain tensor, M0 is the electric field, Z0. is the transverse piezoelectric coupling
constant (Z@L=[@\ /\]), and the aspect ratio Y=RP. The resulting first and second principal strains
are :.. (along ,-.) and :** (along ,-*). The magnetic anisotropy induced by this strain distribution,
(2)
as a function of aspect ratio and applied electric field, is found from equations (1) and (2) to be
%&=−0*<= >?@ M07NO SOO.^X.QX.
(3)
9
Using bulk materials constants (24) in this model yields %&=1.1 kJ/m0 for an 8 V bias
across a 3:2 aspect ratio ellipse, close to the measured value 1.2 kJ/m0 for our rectangular
electrodes. This order of magnitude agreement suggests that far inside the pattern edges the aspect
ratio primarily determines the effect of boundary clamping on the electric field induced magnetic
anisotropy. The magnitude of the magnetic anisotropy is independent of the absolute size of the
biased region, suggesting that lateral electrode dimensions much smaller than the 100 µm scale
used here would still be effective.
Finite element continuum elastic simulations were performed to address the rectangular
biased regions used in our experiments, mapping strains and the resulting magnetic anisotropy
(Fig. 4C). All layers of the structure shown in Fig. 2A except the Au and SU-8 were included in
the simulation, using bulk values for the elastic, piezoelectric and dielectric tensors of PMN-PT
(24). Figure 4C shows the strain-induced magnetic anisotropy energy per applied voltage (color)
and anisotropy axis (white lines) on the surface of the PMN-PT layer. The computed anisotropy
predominantly perpendicular and parallel to the long edge inside and outside the biased region
respectively reproduces the experimental results of Fig. 4A and 4B. The change in direction near
the short edge coincides with very small anisotropy magnitude, and so is difficult to detect
experimentally. The computed 0.45 kJ m-3V-1 magnitude in the large central portion of the biased
region predicts a 3.6 kJ/m3 anisotropy energy density at 8V, about three times the experimental
value. The computed anisotropy is largest near the center, consistent with the experimental spatial
maps of Fig. 3C.
We also simulated a series of elliptical electrodes with varying aspect ratios to compare
with the Eshelby approach. Figure 4D shows that the simulated and analytical anisotropy energies
10
have the same X^.XQ. dependence on aspect ratio. However, the analytic result of Eq. (3) describe an
infinite cylinder of PMN-PT, and the simulation the experimental two-dimensional composite
sheet. The two y-axis scales in Fig. 4D indicate that this difference results in different predicted
anisotropy energy magnitudes, but the dependence on aspect ratio is captured by the analytic result.
According to finite element calculations, the area of largest uniaxial strain is just outside
of the biased region boundary (Fig. 4C). Analytical solutions (25) for the strain outside of elliptical
precipitate inclusions confirm that the largest uniaxial strains are concentrated on the most curved
portion of the boundary, and that the strains drop off like 1/c* far from the boundary (SI
Appendix, Note 1). The measured anisotropy directions of the Ni island outside the biased region
(Fig. 4B) match the calculated anisotropy parallel to the long edge (Fig. 4C black boxed) and the
direct phase-field simulations of the magnetization direction (SI Appendix, Fig. S6) for those
locations. We did not experimentally find a significant difference in the induced anisotropy energy
inside and outside of the biased region, likely due to pre-existing magnetic anisotropy and domain
pinning in the Ni that makes !"#$ a coarse method for measuring anisotropy energy.
Conclusions
The preceding analysis, and that summarized in the SI Appendix, leads to a set of
guidelines for manipulating the magnetoelectric response in piezoelectric membrane composites
using piezoelectric tensor design. An elongated single electrode generates uniaxial compressive
strain and magnetic anisotropy inside the biased piezoelectric region that increases with aspect
ratio, and is predominantly oriented along the short axis. Ellipsoidal biased regions have exactly
uniform interior strains (SI Appendix, Fig. S4), with about sixty percent of the limiting anisotropy
value obtained at an aspect ratio of 4:1. Substantial further increases require large increases in
aspect ratio. Rectangular regions generate about 20% more uniaxial strain than ellipses of the same
11
aspect ratio (SI Appendix, Fig. S5), but the strain is less uniform in rectangles. The maximum
uniaxial tensile strain is located outside highly curved boundaries and is at least twice as large as
the interior uniaxial strain, but at the cost of reduced spatial uniformity (SI Appendix, Note 1). In
the case of a straight boundary, the exterior magnetic anisotropy is perpendicular to the interior
anisotropy. These rules allow for the design of particular anisotropy magnitudes and directions
using boundary shape and layout.
Piezoelectric membrane composites are positioned to take advantage of interest in freestanding
films and the number of available fabrication techniques (26, 27). Our results here demonstrate the
fundamental principles of piezoelectric tensor design for magnetoelectric coupling in membrane
composites, and optimization of the biased region geometry will likely realize even higher
magnetoelectric coupling. Several theoretical proposals for inducing 180° in-plane magnetization
rotation in bulk composite magnetoelectrics using spatially varying electric fields have been
proposed (28 -- 30). Piezoelectric membranes offer an alternative, thin-film platform for realizing
such proposals using the design guidelines developed here. We also expect that these
magnetoelectric membrane structures can be used as sensors, with a piezovoltage readout.
Although we have focused on in-plane magnetization manipulation, the biaxial strain present in
square or circular devices may also be able to control the out-of-plane magnetization of a
ferromagnetic overlayer with perpendicular magnetic anisotropy (31, 32). Additionally,
integration of other materials with piezoelectric membranes would allow for electric field control
of, for instance, superconducting TC (33 -- 35), band topology (36 -- 38), conductivity (39), and
optical properties (40) with designed strain patterns.
12
Materials and Methods
Membrane Fabrication
Figure 1 is the schematic of the fabrication procedure for the PMN-PT membrane devices.
Here we will describe the method in detail. Growth of high quality epitaxial PMN-PT (001) thin
films started with a (001) Si wafer with a 4° miscut towards [110] direction and a 20nm buffer
layer of STO. First, 100 nm of SRO was grown using 90° off-axis rf-magnetron sputtering (41) at
100 W power and 600 ºC. A mixture of Ar and O2 gas, flown at 12 sccm and 8 sccm respectively,
supplied a working pressure of 200mTorr. PMN-PT films were then grown using a misaligned
parallel dual planar magnetron sputtering technique (42) with substrate rotation with 100W power
at 625 ºC. A mixture of Ar and O2 gas, flown at 17 sccm and 3 sccm respectively, supplied a
working pressure of 500 mTorr for PMN-PT growth. A 100 nm layer of Pt was then deposited on
top of PMN-PT by DC Magnetron sputtering. The heterostructure was annealed in O2 at 300 ºC
for 30 minutes to reduce residual stress in the Pt film. The Si substrate was then mechanically
polished to reduce the thickness from 300 µm down to 100 µm to reduce total etching time during
the later XeF2 dry etching. After polishing, Polydimethylsiloxane (PDMS), with a 10:1 mixture
ratio of monomer to crosslinking agent, was spin-coated onto a glass slide at 5000rpm for 10
seconds, resulting in a thickness of approximately 30µm. The thin film heterostructure was then
placed Pt-side down onto the uncured PDMS, leaving the Si substrate exposed, and the sample
was placed under vacuum for a minimum of 5 hours to remove air bubbles from between the Pt
and PDMS layers. After the vacuum treatment, the PDMS was then cured on a hot plate for 1 hour
at 100 ºC.
Once the PDMS was cured, the sample was ready for Si removal. Prior to XeF2 etching of
Si, a 15 second plasma etch using CF4 and O2, flowing at 45 sccm and 5 sccm, respectively, to a
13
pressure of 40mTorr, was performed to remove any moisture on the sample, as well as any native
SiO2 present on the Si substrate. The Si substrate was then completely removed via XeF2 etching.
The XeF2 etching system was performed in a SPTS Xetch e1 XeF2 etcher system. The system
exposes the samples to XeF2 in a cyclic mode, and the recipe used here was chosen to maximize
the etch rate for complete removal of the Si substrate. The recipe exposed the samples to 4 Torr
of XeF2 for two-minute periods, followed by pumping down to 0.8 Torr between cycles for a
continuous etch before the next cycle began. Due to the exothermic nature of the reaction of XeF2
with Si, the pressure in the chamber rises during the two-minute etch cycles. When the Si is
completely removed, the pressure increase is notably absent during an etch cycle, signaling that
the etching is complete.
After Si removal, the STO buffer layer was removed via Ar+ ion-milling. The SRO layer
was then patterned into various geometries using photolithography and wet etching with a 0.4M
NaIO4 solution. A 35 nm layer of Ni was deposited by DC Magnetron sputtering, and
photolithography was performed to pattern the Ni with a Transene Ni Etchant Type 1 wet etchant.
A SU-8 protection layer was applied by spin-coating at 5000 rpm for 40 s, resulting in a thickness
of 2µm, followed by photolithography patterning. Finally, 30 nm of Au was deposited via DC
Magnetron sputtering and patterned via photolithography, and Transene TFA Au wet etchant was
used to make the "lifted" Au electrodes.
Finite-Element Simulations
Finite element calculations were performed with COMSOL MultiphysicsTM. Simulations
were performed using the layers and thicknesses from Figure 2A. The sheet of PMN-PT and
back electrode were 1.4 µm diameter to simulate a small biased region surrounded by a large
unpolarized membrane. No mechanical constraints were applied to any surfaces, simulating an
14
unconstrained membrane. The stiffness tensor and piezoelectric coefficients used for PMN-PT
may be found in Table 2 of reference (24). The stress-charge form of the piezoelectric
constitutive relations was used:
∇⋅f@=g8
∇⋅h@L=0
f@=Z@\]:\]+:jk@LML
h@L=[@L\]:\]−Z\@LM\
where f@,M@,h@L,:\],g8,Z@L\,[@L\],k@L are the electric displacement, electric field, stress
tensor, strain tensor, free charge density, piezoelectric coupling tensor, stiffness tensor and
relative permittivity, respectively.
Longitudinal MOKE Measurements
The sample was mounted between the poles of an electromagnet and a red HeNe (632nm)
laser was reflected off of the sample surface at approximately 45° from normal incidence. The
beam was focused to an approximately 10 µm spot using an achromat. The reflected beam's
polarization was rotated to 45° from p-polarized with a half-wave plate and then the s- and p-
polarized components were measured with a differential balanced photodetector. The differential
signal is proportional to the Kerr polarization rotation. Spatial mapping was achieved by
mounting the sample on a two-axis linear piezoelectric motion stage and scanning the sample
under the focused beam.
Acknowledgements
This work was supported by the Army Research Office through grant W911NF-17-1-0462.
Author Contributions
J.I., S.L., W.M., M.S.R. and C.B.E. designed research; J.I., S.L., V.V. and J.W.
performed research; J.I., S.L., L.C., J.H, M.S.R. and C.B.E. analyzed data; J.I., S.L., M.S.R. and
C.B.E. produced the manuscript.
15
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19
Fig. 1 Schematic of the fabrication procedure for membrane magnetoelectric devices. (A) PMN-
PT/SrRuO3/SrTiO3/Si thin-film heterostructure with Pt electrode. (B) Heterostructure is flipped an attached
to PDMS coated glass. (C) Si and SrTiO3 (STO) are etched off leaving behind sub-micron membrane. (D)
Ni is deposited and Ni/SrRuO3 (SRO) is patterned into an array of devices. (E) A protective coating of
SU-8 is applied and Au contacts are added. The indicated cross section view is shown in Fig. 2A.
Fig. 2. (A) Cross section schematic of a completed sample. Positive voltage corresponds to
polarization towards the SrRuO3. (B) Biased regions with aspect ratio A ≠1 generate excess strain
along their shorter directions which induces a magnetic easy direction (gold arrow). The strain
distribution in both the biased (gray) and unbiased (green) regions can be considered in terms of
local principal strains, shown with small axes indicating directions of principal strains !"and !#.
The grey squares represent undeformed infinitesimal patches and the black rectangles represent
the same patches after deformation due to the piezoelectric response.
Fig. 3. (A) Magnetic hysteresis loops with the applied magnetic field parallel (top panel) and
perpendicular (bottom panel) to the long edge of the pattern. (B) Map of coercive field (HC) across
a Ni island measured with MOKE at zero bias. No magnetic signal was detected at white pixels.
(C) Coercive field map of the same island with a 6V applied bias.
3:2 biased region at 0 V and 5 V bias and with the magnetic field along $%#. (C) Induced magnetic
Fig. 4. MOKE hysteresis loops measured on Ni islands placed just inside (A) and outside (B) a
anisotropy per applied voltage on and around the biased region. Color represents anisotropy
energy and the white lines are the anisotropy axis direction. Black rectangles indicate the
experimentally probed regions. (D) Aspect ratio dependence of the simulated (circles, left axis)
and Eshelby model (dotted lines, right axis) anisotropy energy inside elliptical biased regions.
The asymptotic value is shown as a dashed black line.
Supplementary Information for
Magnetoelectric Coupling by Giant Piezoelectric Tensor Design
J. Irwin, S. Lindemann, W. Maeng, J. J. Wang, J.M. Hu, L.Q. Chen, D.G. Schlom, C.B. Eom,
M.S. Rzchowski
M.S. Rzchowski
Email: [email protected]
This PDF file includes:
Material Characterization
Modeling of Piezoelectric Membrane Devices
Supplemental Magnetoelectric Characterization
Figs. S1 to S7
Table S1
Note 1
Material Characterization
Structural Characterization of Membrane Devices
The structure of the PMN-PT thin films was measured by a high-resolution four-circle
XRD machine (Bruker D8 Discover). Figure S1A shows a θ-2θ scan for a PMN-PT thin film
before and after substrate removal. Before substrate removal the heterostructure measured here
was as follows: 500 nm PMN-PT /100 nm SrRuO3 / 20 nm SrTiO3/ Si (001). Therefore, observed
peaks include peaks from the Si, SRO, and PMN-PT layers, but the STO layer was too thin for
peaks to be observed in this measurement. Once the membrane device was completed, the
heterostructure measured was: Ni / SRO / PMN-PT / Pt / PDMS / glass. The SU-8 and Au were
not yet deposited onto this device when it was measured. The SRO and Ni layers are patterned
into small features of 40-200 µm with large spaces in between, therefore, the SRO peaks are greatly
reduced in intensity. The major observed peaks only stem from the PMN-PT and Pt layers.
As expected, the Si 004 peak disappears after Si has been etched away, and the SRO peaks
also vanish after SRO has been patterned, but one other noticeable change is that the PMN-PT
peaks shift towards lower 2θ values meaning that the out-of-plane lattice parameter has increased
due to the lattice mismatch strain relaxation. Figure S1B shows only the region around the (002)
peaks, and a reference line has been added to highlight the difference in the PMN-PT peak position
once the Si is removed. Table S1 shows the 2θ values and corresponding lattice spacings for the
PMN-PT thin film, membrane, and bulk PMN-PT with a composition near the MPB for
comparison. Once the membrane has been freed from the Si substrate, the 2θ decreases towards
the bulk PMN-PT value, showing that the PMN-PT film grows under tensile in-plane strain due to
lattice parameter mismatch with Si substrate and relaxes back towards its bulk value upon substrate
removal. An increase in the width of the 2θ peaks accompanies this relaxation.
Figure S1C shows the rocking curves of the PMN-PT 002 peaks before and after substrate
removal. For the PMN-PT on the Si substrate, the FWHM = 0.4º. Once the PMN-PT is released
and relaxes the FWHM = 0.5º, a slight increase. Figure S1D shows phi scans of PMN-PT 101
peaks for the Film and Membrane devices. The FWHM of the phi scans for the film and membrane
are 0.95º and 0.99º, respectively.
Fig. S1. X-ray Diffraction Characterization of PMN-PT Thin Film and Membrane (A) Full θ-2θ XRD scan of
PMN-PT Thin Film and Membrane. (B) θ-2θ scan region around the (002) PMN-PT peak shows a shift in 2θ for
the PMN-PT peak once the Si substrate is removed. The shift demonstrates the tendency for the PMN-PT to relax
towards bulk PMN-PT lattice spacings (Table S1). The membrane device was measured after SRO patterning,
therefore the SRO peaks have very little intensity. (C) Rocking Curve of (002) PMN-PT Thin Film Peak and
Membrane. There is a slight increase in FWHM upon substrate release. (D) Phi scans of (101) PMN-PT Thin
Film and Membrane.
Table S1. Out-of-plane Lattice Spacing of PMN-PT
Sample
Thin Film
Membrane
Bulk*
2θ
45.225º
44.960º
44.800º
d-spacing
4.0068 Å
4.0292 Å
4.0428 Å
*Bulk Value for PMN-PT Compositions near the MPB: (x)PMN-(1-x)PT x ≈ 0.3
Ferroelectric and Dielectric Characterization of PMN-PT Membrane
Figure S2A compares polarization-electric field hysteresis loops of a PMN-PT thin film to a
membrane released from its substrate. Both film and membrane show ferroelectric imprint that
favors polarization pointing towards the top (SrRuO3) electrode. The membrane appears to have a
slightly larger saturation polarization, but this could also be an artifact due to increased leakage
currents during the measurement. Figure S2B shows that the dielectric constant of the membrane
in the polarization reversal region is smaller in the thin-film sample, probably due to substrate
clamping.
Fg. S2. Ferroelectric and Dielectric Characterization of Films and Membranes
(A) Polarization-Electric field loops for thin-film (blue) and membrane (red)
samples. (B) Permittivity and Loss Tangent measurements of thin-film (blue)
and membrane (red) samples.
Piezoelectric Characterization of PMN-PT Membrane
Fig. S3. Piezoelectric d33 measured with a double beam intereferometer.
Modeling of Piezoelectric Membrane Devices
Anisotropy Map of 2:1 Elliptical Biased Region
Figure S4 shows a finite-element simulation of an elliptical biased region using the same
methods and materials parameters as Figure 3 shows that the interior uniaxial strain is exactly
uniform, as predicted by the Eshelby model. Outside the biased region the anisotropy direction is
approximately tangent to the nearest boundary point. The anisotropy direction does not necessarily
rotate by 90° upon crossing from the biased to unbiased region, for example near the biased region
boundary on the major axis. The rectangular biased region simulation of Figure 3 demonstrated
the 90° rotation when crossing both the long and short boundaries, although the anisotropy strength
was very low near the short edge, and the direction did not rotate exactly 90° near the corners of
the rectangle.
Fig. S4. Finite-element simulation of a 300 µm by 150 µm elliptical biased region.
Strain in Elliptical vs. Rectangular Biased Regions
Finite-element simulation found that the strain in the central region of the biased region is
consistently larger in rectangular biased regions than in elliptical ones (Fig. S5). The net effect of
the curvature of the elliptical boundaries is to generate uniform interior strain, but at the cost of
about a 20% reduction in strain magnitude. Rectangular electrodes have non-uniform strain away
from their centers, but the strain per aspect ratio, and per electrode area, is greater.
Fig. S5. Comparison of the strain-induced magnetic anisotropy strength per volt at
the middle of elliptical and rectangular biased regions, computed with finite-
element simulations.
Phase-field Method
In the phase-field model of magnetics, the magnetization is selected as the order parameter
to describe the magnetic anisotropy and magnetic domain structures, which can be evolved by the
Landau -- Lifshitz -- Gilbert equation
(
1
+
2
a
)
M
¶
t
¶
= -
g
0
M H
´
eff
-
ga
0
M
S
M M H
´
´
(
)
,
eff
(S6)
where MS, a, and g0 represent the saturated magnetization, damping constant, and gyromagnetic
ratio, respectively. The effective field is given by
Fd
1
M
µ d
(S7)
= -
H
eff
0
with F the total free energy including the magneocrystalline anisotropy energy, exchange energy,
magnetostatic energy, external magnetic field energy, and elastic energy
(S8)
In the simulation, the Fanis is neglected for simplicity regarding the isotropic nature of the
polycrystalline Ni thin film. The isotropic Fexch is determined by the gradient of local
magnetization vectors, i.e.,
F
exch
F
external
F F
F
elastic
(
+ Ñ
(S9)
F
exch
F
ms
dV
m
2
m
3
anis
=
(
+ Ñ
where z denotes the exchange stiffness constant.
zé
ë
m
1
Ñ
ò
=
(
)
ù
û
+
+
+
+
,
.
)
2
)
2
2
V
The magnetostatic energy density fms can be written as,
F
external
ò
V
The elastic energy Felastic is written as
ò
c
ijkl
F
elastic
=
1
2
µ= -
0
M
S
(
H m
×
ext
)
dV
.
(
0
e e e e
ij
kl
)(
-
-
0
ij
kl
)
dV
(S11)
(S12)
F
ms
= -
µ
0
M
S
(
H m
×
d
)
dV
.
(S10)
1
ò
2V
dH
Here
denotes the stray field, and it can be numerically calculated by employing a finite-size
magnetostatic boundary condition previously developed for a 3D array of ferromagnetic cubes (1).
The Zeeman energy of an external magnetic field can be expressed as
ije
through which the magnetoelastic coupling within the Ni island is considered. The total strain eij
includes a homogeneous part
and an inhomogeneous part deij , which can be solved from the
mechanical equilibrium equation. The homogeneous strain is assumed to be equal to the in-plane
average piezoelectric strain at the surface region of the biased PMN-PT substrate underneath the
Ni island.
To solve the phase-field equations of Ni nanoislands, spectral-based approaches are
employed with following material parameters for Ni nanoislands: Ms=2.9´105 A/m (2), g0=2.2´105
m/(A×s) (3), a=0.1 (3), ls=-3.3´10-5 (2), c11=247 GP (4), c12=147 GP (4), c44=50 GP (4), z
=8.2´10-12 J/m (5). The discrete grid points of 800Dx´600Dy´Dz with real grid spaces Dx=Dy=5
nm. The real time step Dt of 0.1 ps is used for solving the LLG equation.
Figure S6A shows the magnetization domain structures for Ni islands with zero bias across
the PMN-PT membrane, showing multi-domain states of different orientations, indicating that
there is no magnetic anisotropy. Figure S6B shows the anisotropic strain distribution computed
by the phase-field method, with an 8V bias applied to the 300 µm by 200µm rectangular top
electrode. The strain anisotropy transferred to 4 µm by 3 µm Ni islands on top of the membrane
depends on their positions relative to the biased region. At position 1, as shown in Fig. S6C, the
Ni island magnetization will be switched from multi-domain to single domain with the
magnetization parallel to the short edge direction. Similarly, for a Ni island grown at position 2,
the simulated magnetization is parallel to the long direction (Fig.S6D), indicating a magnetic easy
axis in this direction. The phase-field direct simulation of the magnetoelastic coupling effect on
the magnetization agrees with the experimental magnetic easy axis determination from Kerr
magnetic hysteresis loops.
Fig. S6. Micromagnetic simulations of piezoelectric membrane device. (A) Magnetization domain structures for as-
grown 4 µm by 3 µm Ni islands on PMN-PT without an applied electric field. (B) Anisotropic strain distribution used
for micromagnetic simulations with Ni island positions labelled. Magnetization domain structures for Ni islands
located at position 1 (C) and position 2 (D) with 8V bias voltage.
Analysis of Exterior Strain
Note 1
In this section we will provide analytic support for the design rules relating to magnetic
anisotropy inside and outside elliptical biased regions. Jaswon and Bhargava (6) developed an
analysis of the elastic response of two-dimensional elliptical elastic inclusions in an elastically
isotropic media. Here we use this approach to investigate elliptical biased regions in a
piezoelectric membrane, assuming isotropic elastic constants for simplicity. For an elliptical
biased region with long axes a along !" and short axis b along !#, confocal elliptical coordinates
(%,') with foci a±√+#−-# are used to describe the exterior strains. The transformation to
Cartesian coordinates is
Following Jaswon, the exterior strain can be written
(S1)
.!"=√+#−-#cosh%cos'
!#=√+#−-#sinh%sin'
677=−688=9 :;:<=;<
><?=@AB#8
"CDEF=#D<F@AB#8
γ= EJ KJ"(1+ν)
(S2)
with the Cartesian axes making the induced anisotropy energy
the following equivalent relations:
where O is the shear modulus of the membrane (the expressions from the reference have been
converted into strains using in the limit of plane stress). Along the !" axis '=0 and along the
!# axis '=Q/2. For these two high symmetry directions the elliptical % and ' directions align
TU=−J#VW XYZ677−688=−J#VW XYZ6\\−6]]=−3VW XYZ 677.
The boundary of the elliptical biased region is at %=%_ , with %_ determined from any of
The maximum and minimum anisotropy energies occur on the %=%_ contour at '=0 and '=
Q/2, respectively. Combining (S2) and (S3) and converting to anisotropy energy gives
where the aspect ratio l=+/-. In the case of l=1, a circular biased region, everywhere on the
boundarTU= −3/2 VW XYZ 9 y. For A>1 the maximum and minimum strain respectively are
to minimum anisotropy on the boundary is equal to the aspect ratio l, and the maximum
:<=;< , tanh%_=;: , b#7c=:C;:=;.
cosh2%_=:<C;<
TU8d_,7d7c=TUefg=−3VW XYZ 9 hhC"
TU8di/#,7d7c=TUejk=−3VW XYZ 9 "hC",
equally above and below the anisotropy value for a circular electrode. The ratio of the maximum
(S4)
(S3)
(S5)
anisotropy is at the most strongly curved part of the boundary.
The uniform interior magnetic anisotropy can be written in terms of the maximum and minimum
anisotropy energies on the boundary. Again following Jaswon's solution, the anisotropy energy
inside the biased region can be written
TUZop=−32Vq:prYZsb\Zop−b]Zopt=−32Vq:prYZ 9l−1l+1
At large A, TUejk goes to zero and the interior strain-induced anisotropy is half of that just
Far from the boundary the magnitude of the strain decreases as 1/v#. To see this, let '=
Q/4 in equations (S1) and (S2) and simplify to
TUZop=12sTUefg−TUejkt.
outside of the most highly curved boundary.
677=92
+-+#−-#
1cosh2%=92
+-+#−-#
cosh#%+sinh#%=94+-v#.
1
Although this was derived for a particular value of ' it holds for arbitrary ', as contours of
constant % are circular at large %, and strains are constant along the boundary of circular biased
regions.
Supplemental Magnetoelectric Characterization
Voltage Control of Magnetic Anisotropy Energy
Electric field induced rotation of magnetic anisotropy was measured in Figs. 2 and 3. We
also measured modulation of anisotropy strength using a 300 µm by 200 µm rectangular biased
region covered by continuous Ni (Fig. S7). This is the same type of device as was measured in
Figure 2, but on a different sample in which there was Ni anisotropy in the as-grown state. Here,
the as-grown magnetic anisotropy was measured to be along !x", the same direction as the strain-
parallel, then KTU/Ky can be calculated by measuring zBf{ at a series of increasing voltages.
induced magnetic anisotropy. Assuming that the as-grown and strain induced anisotropies are
The absolute size of the anisotropy in this device, up to 7 kJ/m3, is larger than those measured in
Figs. 2 and 3. The anisotropy per bias voltage estimated from the slope is 0.7 kJ m-3 V-1.
the PMN-PT, according to zq:p estimates made from MOKE data.
Fig. S7. Anisotropy energy in this device increases linearly with bias voltage across
References
1.
Schabes ME, Aharoni A (1987) Magnetostatic Interaction Fields for a Three-Dimensional
Array of Ferromagnetic Cubes. IEEE Trans Magn 23(6):3882 -- 3886.
2. Ghidini M, et al. (2013) Non-volatile electrically-driven repeatable magnetization reversal
with no applied magnetic field. Nat Commun. doi:10.1038/ncomms2398.
3. Walowski J, et al. (2008) Intrinsic and non-local Gilbert damping in polycrystalline nickel
studied by Ti : Sapphire laser fs spectroscopy. J Phys D Appl Phys 41:164016-1-164016 --
10.
4. Wang JJ, et al. (2014) Full 180° magnetization reversal with electric fields. Sci Rep
4:7507-1-7507 -- 5.
5. Michels A, Weissmüller J, Wiedenmann A, Barker JG (2000) Exchange-stiffness constant
in cold-worked and nanocrystalline Ni measured by elastic small-angle neutron scattering.
J Appl Phys 87(9):5953 -- 5955.
6.
Jaswon MA, Bhargava RD (1961) Two-dimensional elastic inclusion problems. Math
Proc Cambridge Philos Soc 57(3):669 -- 680.
|
1811.05093 | 1 | 1811 | 2018-11-13T04:07:31 | Design and simulation of a low dark current metal/silicon/metal integrated plasmonic detector | [
"physics.app-ph"
] | Silicon-based waveguide plasmon detectors have a great research interest because of CMOS compatibility and integration capability with other plasmonic integrated circuits. In this paper, a balanced metal-semiconductor-metal (MSM) integrated plasmonic detector is proposed to isolate the output from dark current and made it suitable for low noise applications. Performance characteristics of the new device are numerically simulated. In a specific bias point (V = 3 V), the output current is estimated to be about 31.8 {\mu}A and responsivity is 0.1288 A/W for a device with 2 {\mu}m2 area. Simulation results for this balanced Plasmon detector demonstrate considerable dark current reduction compared with unbalanced plasmon detectors. Our estimated theoretical I-V characteristic, fits appropriately with experimental curve results reported before. | physics.app-ph | physics | Design and simulation of a low dark current
metal/silicon/metal integrated plasmonic detector
Elahe Rastegar Pashaki
Ph.D. student
Hassan Kaatuzian
Professor
Photonics Research Laboratory
Photonics Research Laboratory
Electrical Engineering Department
Amirkabir University of technology
Electrical Engineering Department
Amirkabir University of technology
Tehran, Iran
Tehran, Iran
Abdolber Mallah Livani
Assistant Professor
Electrical Engineering Department
Mazandaran University of Science
and Technology
Behshahr, Iran
Email: [email protected]
Email: [email protected]
Email: [email protected]
Abstract -- Silicon-based waveguide plasmon detectors have a
great research interest because of CMOS compatibility and
integration capability with other plasmonic integrated circuits. In
this paper, a balanced metal-semiconductor-metal (MSM)
integrated plasmonic detector is proposed to isolate the output
from dark current and made it suitable for low noise applications.
Performance characteristics of the new device are numerically
simulated. In a specific bias point (V = 3 V), the output current is
estimated to be about 31.8 μA and responsivity is 0.1288 A/W for
a device with 2 μm2 area. Simulation results for this balanced
Plasmon detector demonstrate considerable dark current
reduction compared with unbalanced plasmon detectors. Our
estimated theoretical I-V characteristic, fits appropriately with
experimental curve results reported before.
Keywords-plasmonic; photodetector; Internal photoemission;
dark current; MSM waveguide
I.
INTRODUCTION
Recently, many pieces of research have been focused on
detection of infrared (IR) wavelengths, in applications like
optical communications, material inspection, imaging for
thermal analysis and biomedical measurements [1, 2]. Detection
of IR wavelengths based on electron-hole pair (EHP) generation
mechanism suffers from considerable noise resulted by using
low bandgap semiconductors. On
internal
photoemission (IPE) mechanism makes sub-bandgap detection
possible. Nevertheless, low detection responsivity of IPE
process is a negative point, which can be compensated by
creating a higher intensity of electric field, and as a result,
increasing level of photon absorption and photo-generated
carriers in plasmonic detectors, specifically in Plasmonic
Integrated circuits [3, 4].
the contrary,
Plasmonic IPE photodetectors can be fabricated in parallel
(waveguide) [5, 6] or vertical [7] source configurations. Silicon-
based waveguide plasmon detectors are a key component in
designing CMOS compatible integrated plasmonic circuits
because of their capability with other plasmonic integrated
circuits [8]. These detectors are composed of Schottky contacts
and plasmonic waveguides. For instance, Metal-Semiconductor-
Metal (MSM) waveguides can be used in IPE based Schottky
plasmon detectors in symmetric or asymmetric configurations.
1
The sample reported in [6] is proposed as a novel class of
asymmetric MSM-IPE detectors, which has, comparable
performance parameters to state-of-the-art photodiodes while
having a tiny footprint. Despite all these benefits, the proposed
device has a large amount of dark current that is under the same
enhancement process as detection current, which makes these
devices inappropriate for low noise applications.
In this paper, a balanced structure [21] based on the reported
detector of [6] has been proposed, in which the effect of dark
current on the output load is considerably decreased, while
appropriate responsivity and bandwidth characteristics of the
new device are relatively preserved. In section 2, physical
structure of the proposed detector will be introduced. Then,
operation principles will be discussed in sections 3. Simulation
method and results are presented in section 4. Finally, process of
this work will be concluded in section 5.
II. DEVICE STRUCTURE
Physical structure of the proposed detector, which consists of
two identical asymmetric MSM waveguides, is sketched in fig.1.
Fig. 1. Physical structure and dimensions of the proposed differential
plasmon detector
Each waveguide has a lightly p-doped Silicon core
sandwiched between Titanium and Gold layers forming two
metal-semiconductor junctions. Physical parameters of the
detector layers are summarized in table 1. In this structure,
carriers flow through the narrower region of the Si core, which
is considered as an active region (height ≈ 275nm) in fig. 1.
One of the two waveguides has an optical input while the other
one is existed just for creating the same dark current as the main
waveguide to form a differential structure, which leads to a
considerable reduction of dark current in output.
TABLE I.
PHYSICAL PARAMETERS OF PROPOSED PLASMON DETECTOR
On the other hand, there is another notation for ηi as [12]:
(1)
Type /dope (cm-3)
Width (nm)
Length (μm)
(2)
P-Type / 1015
W = 200
P-Type / 1018
100
t = 40
L = 5
L = 5
L = 5
Where Ip and q are photocurrent and elemental charge and Sabs is
absorbed optical power, which is converted to incident optical
power by Sabs=A Sinc that A determines the merit of photonic to
the plasmonic converter. Therefore, photo-detection current in a
single Schottky interface is obtained as follows:
Si-core
Si-P+
Metals (Au, Ti)
--
Fig. 2. Bias and measurement circuits of the differential detector.
MSM waveguides are biased to create same dark currents as
shown in fig.2 that results in a negligible output current in
absence of photon/plasmon source. By applying an optical input
to MSM#1, detection current will be added to its background
dark current. This extra current will be the output of the
differential detector.
III. OPERATION PRINCIPLES
A. A model for IPE
Internal photoemission mechanism is based on generation of
hot carriers by absorption of photons (or plasmons) in metal side
of a Schottky barrier. IPE can be described as a 3-step process
[3]. 1) Generation of hot carriers by absorption of photons
/plasmons in metal side, 2) transmission and scattering of hot
carriers toward semiconductor interface, 3) Emission of hot
carriers from the Schottky barrier and creating detection current.
In order to overcome the Schottky barrier (ɸB), hot carriers
should be generated by absorbing Photons/plasmons with the
energy (hʋ; h is Planck's constant and ʋ is optical frequency)
more than ɸB and less than bandgap of semiconductor
(ɸB<hʋ<Eg) because above the upper limit of this condition,
Electron Hole Pairs (EHP) generation mechanism will be
dominant. Details of photon absorption and hot carrier
generation in different metals are described by ab-initio
approach in [9,10] which provides density states of hot carriers
in metal side. This density of states can be imported in Fowler-
Northeim equation for calculating the transmission coefficient
of a triangular potential (Schottky) barrier [11] and as a result,
determining detection current. However, Berini [12] described
this 3-step process through a semi-classical model, which is
simpler
simulation of
photonic/plasmonic devices. According to this model, internal
quantum efficiency of a photo-detector is calculated by [12]:
and more practical
in
the
(3)
Effects of tunneling and barrier lowering mechanisms will
also be included in this simplified model in section B.
B. Energy band diagram
Energy band diagram of each MSM waveguide of proposed
detector structure is shown in fig. 3(a). Schottky barriers for
electrons on each side of the MSM waveguide can be calculated
by ɸBn=W-X. Where X is the electron affinity of Si and W is
metal's work function. Since a Schottky diode operation is based
on majority carriers, in p-doped Si-core MSM waveguide, all
calculations should be done on holes. The Schottky barrier for
electrons can be converted to holes by ɸBp=Eg-(W-X). However,
surface states and Fermi level pinning effect influence these
potential barriers and experimental data are more reliable than
above equations. Consequently, schottky barrier heights for
electrons at Au-Si and Ti-Si interfaces are considered as 0.82ev
[13] and 0.62ev [14] respectively, which would be 0.3ev and
0.5ev for holes.
Fig. 3. Energy band diagram of Au-Si-Ti (a) without, (b) under bias.
In fig. 3(a), for compensation of internal voltage (Vbi=0.2V)
arising from the Schottky barrier difference between two
junctions, Au contact must be connected to a higher potential
than the Ti side which leads to fig. 3(b). In this structure, surface
plasmon polaritons (SPPs) propagate along both interfaces [15].
Plasmon absorption is proportional to imaginary part of metal
permittivity at desired wavelength according to Beer's law
(α=2ω/c[Im(εr)/2]0.5 where α is the attenuation coefficient in
metal, εr and ω are metal's relative permittivity and angular
frequency of photons and c is speed of light) [15]. The relative
permittivity of gold and titanium can be calculated by the Drude-
Lorentz model [16] as -93.06+11.11i and -4.87+33.7i at
λ=1550nm respectively. According to these data, although the
2
2112Bih//piabsIqSh212incBpASIqhh titanium side has a prominent role in plasmon absorption,
generated hot holes of Au side determine detection current
according to energy diagram of fig. 3(b) and this current will be
added to the current of forward biased Ti-Si junction.
Under an appropriate biasing condition, energy diagram of
fig. 3(a) changes into the fig. 3(b). Effects of Schottky barrier
lowering (ΔφBn-Ti, ΔφBp-Au) and tunneling of carries through
effective barrier widths (Weff) should be considered in this case.
The Schottky effect is the image-force-induced lowering of the
potential energy for charge carrier emission and is proportional
to applied voltage according to the following equation [17]:
(4)
Here, Vapp is the applied voltage, εs is Si permittivity and W is
core width in the MSM structure. By reducing the Schottky
barrier height, thermionic emission current will be increased.
Increasing the probability of tunneling through the Schottky
barrier is another voltage-dependent effect in described MSM
detector. Detailed energy diagram of Ti-(n-Si)-Au structure is
shown in fig. 4.
Fig. 4. Detailed energy diagram of Ti-Si-Au structure.
Accordingly, the relation between Vapp and conduction band
energy (Ec) will be:
(5)
Where E and n are the local electric field and local electron
concentration, Nc is the local conduction band density of states,
ɣn is the local Fermi-Dirac factor, Ec is the local conduction band
edge energy and EFM is the Fermi level in the contact. The
tunneling probability (Γ(y)) in this equation can be determined
by assuming a linear variation of conduction band energy (Ec),
as follow [19]:
(8)
Here, m is the electron effective mass for tunneling and ℏ is
reduced Planck's constant. Based on Eq. (5), in a specific "y" by
increasing the applied voltage, Ec(y) will be decreased which
causes enhancement of tunneling probability according to Eq.
(8). Similar expressions of the above equations exist for holes
by considering Ev = Ec-Eg, hole's average effective mass, ɸBP,
etc. as an alternative for corresponding parameters. However,
calculation (based on parameters which are determined in Table.
II of section IV) shows that effect of tunneling term in total
current is very limited (JT is about 8.8435×10-12), hence, it is
neglected in later calculations.
C. Current Analysis
The differential detector of fig. 2 can be considered as 2
Schottky diodes in the configuration of fig. 5(a). Gold-Silicon
(p-type) junction has a low potential barrier which reduces even
more base on barrier lowering effect by applying the external
voltage (ΔɸB = 0.0351ev for V = 2V). Simulations in the next
section show that Au-Si junction in this structure can be
considered as an Ohmic contact and this assumption leads to an
I-V characteristic that fits appropriately with experimental curve
reported in [6].
Tunneling component of current in a Schottky junction is
shown in fig.4 and can be described by [18]:
(a)
(b)
(6)
Where JT is tunneling current density, A* and T are effective
Richardson's coefficient and lattice temperature, fs(E) and fm(E)
are the Maxwell-Boltzmann distribution functions in the
semiconductor and metal, K is Boltzmann's constant, E is the
carrier energy and Γ(E) is tunneling probability. To obtain the
localized tunneling rate, eq. (6) is imported in GT = (∇JT)/q and
yields [19]:
Fig. 5. (a) 2-diode and (b) capacitive model of differential plasmon
detector
In this circuit, D1 and D2 are forward biased and hot holes
generation occurs in Au-Si junction (Jdet) which is imported in
current relation of D1. Current density of these Schottky diodes
can be determined by modifying relations of [17] as follow:
(9)
(7)
3
4appBsqVW()BnAuBnTiappcBnTiqVEyyW*1(')(')ln'1(')TEATfsEJEdEKfmE*1/()ln1exp/ncTcFMnNATEGyKEEKT1242()exp()3FMBnTicmyyEEy11*2*21det.*2det.det.(e)ee(e)e1BpTiBpTiDBpTiDqVKTnKTKTmetalsemiconductorsemiconductormetalqVKTnKTJATJATATJJ Numerical solution of equations (9) to (11) has been done
simultaneously and I-V characteristics of different parts in the
proposed differential detector are presented in fig. 7 and
compared with the single MSM structure. Current of D1 which
consists of dark and detection components is almost equal to the
current of previous single MSM detector under illumination. On
the other hand, D2 without any optical input has only the dark
component, which is approximately equal to the dark current of
the single MSM structure. However, there is a slight difference
between corresponding currents in differential and single MSM
detectors caused by increased load voltage. Load current in fig.
7 is created by the current difference of D1 and D2 in the
differential structure and as mentioned before, it is equal to the
detection current.
Fig. 6. Comparison of Simulation results with empirical curves [6].
Both experiment and simulation results belong to single MSM detector.
(10)
(11)
In these equations, ndark and ndet are ideality factors of non-
illuminated and illuminated modes respectively. In illuminated
mode because of hot carrier generation in metal, average energy
of electrons is more than dark condition that results in
enhancement of thermionic emission process. Furthermore,
Ideality factor in a Schottky barrier depends on contribution of
thermionic emission and tunneling in diode current [22, 23].
Thus, ndark and ndet are not equal and are specified as ndark = 1 and
ndet = 3.5 by curve fitting on experimental results of [6].
D. Bandwidth
Operating speed analysis of Au-Si-Ti detector has been done
in [6]. It was shown that among different limitations, such as
hot-carrier lifetime in metals, carrier drift time through the
semiconductor layer and RC time constant, the last one has a
dominant effect. Capacitance of MSM junction is estimated
based on an equivalent parallel-plate capacitor (C) with 5μm ×
275nm metal area across W=200 nm Si core which leads to a
capacitance below C = 0.7 fF. According to fig. 5(b), in the
differential detector, there would be two parallel capacitors,
which duplicate RC time constant of this structure with same
load resistance (R = 50 Ω) compared with the initial detector.
Nevertheless, this bandwidth reduction (by factor 2) is the paid
cost for eliminating the dark current effect on the load.
IV. SIMULATION AND RESULTS
Simulations have been done in MATLAB™ to determine I-
V characteristic of the structure shown in fig. 5(a). In order to
verify the validity of mentioned equations (9, 10), the fabricated
structure reported in [6], is simulated and results are compared
with the reported empirical curves. Simulation parameters are
summarized in table II and comparison of results are available
in fig. 6 for dark and detection currents. Structural similarities
between Introduced device of this work and reported device of
[6], allow us to apply the presented theories to simulation of the
proposed device.
TABLE II.
SIMULATION PARAMETERS
A*
Value
Ref.
Value
Ref.
0.66×120 A/cm2/K2
(p-type Si)
[17]
ɸBp-Ti
0.5 ev
[14]
Eg
1.12 ev @ room temp.
0.3×9.109×10-31 Kg
(average mass of light
and heavy holes)
m
Nv
ɣp
λ
1.8×1019 for Si
[20]
-9.2
1550 nm
ɸBp-Au
0.3 ev
[13]
A =
Sabs / Sinc
0.5
Sinc
T
310 μW
300 K
Rload
50 Ω
Fig. 7. I-V characteristics of different parts in the proposed differential
detector and single MSM detector.
The responsivity of a detector is defined as the slope of output
current versus optical input power characteristic, which is
plotted for 3 bias voltages 1V, 2V and 3V in fig. 8.
4
2*22ee1BpTiDdarkqVnKTKTJAT11221212()()RRDIDIAusiAusiVVareaJJRVVareaJJRareaJRareaJR
[2] Mark L. Brongersma, Naomi J. Halas, and Peter Nordlander, "Plasmon-
induced hot carrier science and technology," nature nanotechnology, vol.
10, pp. 25-34, January 2015.
[3] P. Berini, "Surface plasmon photodetectors and their applications," Laser
Photonics Rev., DOI 10.1002/lpor.201300019, 2013.
[4] H. A. Atwater and A. Polman, "Plasmonics for improved photovoltaic
devices," Nat. Mater. 9, 205 -- 213, 2010.
[5] Goykhman, B. Desiatov, J. Khurgin, J. Shappir, U. Levy, "Waveguide-
based compact silicon Schottky photodetector with enhanced responsivity
in the telecom spectral band," Opt. Express 20, 28594 -- 28602, 2012.
[6] S. Muehlbrandt, A. Melikyan, T. Harter, and et. al. "Silicon-plasmonic
internal-photoemission detector for 40 Gbit/s data reception," OPTICA
Optical Society of America, Vol. 3, No. 7, pp. 741-747, 2016.
[7] S.R.J. Brueck, V. Diadiuk, T. Jones, W. Lenth, "Enhanced quantum
efficiency internal photoemission detectors by grating coupling to surface
plasma waves," Appl. Phys. Lett., vol. 46, pp. 915 -- 917, 1985.
[8] A. M. Livani and H. Kaatuzian, "Design and simulation of an electrically
pumped Schottky junction based plasmonic amplifier," Applied Optics,
vol. 54, no. 9, pp. 2164−2173, 2015.
[9] Ravishankar Sundararaman, Prineha Narang, Adam S. Jermyn, William
A. Goddard & Harry A. Atwater, "Theoretical predictions for hot-carrier
generation from surface plasmon decay," nature communications, Dec.
2014.
[10] Marco Bernardi, Jamal Mustafa, Jeffrey B. Neaton & Steven G. Louie,
"Theory and computation of hot carriers generated by surface plasmon
polaritons in noble metals," nature communications, Jun. 2015.
[11] Richard g. Forbes and Jonathan h. b. Deane, "Transmission coefficients
for the exact triangular barrier: an exact general analytical theory that can
replace Fowler & Nordheim's 1928 theory," Proc. R. Soc. A vol. 467, pp.
2927 -- 2947, 2011.
[12] Christine Scales, and Pierre Berini, "Thin-Film Schottky Barrier
Photodetector Models," IEEE Journal of Quantum electronics, vol. 46, no.
5, pp. 633-643, May 2010.
[13] T. P. Chen, T. C. Lee, C. C. Ling, C. D. Beling, and S. Fung, "Current
transport and its effect on the determination of the Schottky-barrier height
in a typical system: gold on silicon," Solid-State Electron. 36, 949 -- 954,
1993.
[14] M. Cowley, "Titanium-silicon Schottky barrier diodes," Solid-State
Electron. 13, 403 -- 414, (1970).
[15] S. A. Maier, Plasmonics: Fundamentals and Applications, Springer
Verlag, 2007.
[16] B. Ung and Y. Sheng, "Interference of surface waves in a metallic
nanoslit," Optics Express, 2007.
[17] S.M. Sze, Physics of semiconductor devices, Wiley-Interscience
publication, chap. 5, 2nd ed., 1981.
[18] Matsuzawa, K., K. Uchida, and A. Nishiyama, "A Unified Simulation of
Schottky and Ohmic Contacts", IEEE Trans. Electron Devices, Vol. 47,
No. 1, pp. 103-108, Jan. 2000.
[19] Silvaco, Inc. (2013, Oct. 2). Atlas User's Manual [online]. Available:
http://www.silvaco.com/
[20] Raseong Kim and Mark Lundstrom, "Notes on Fermi-Dirac Integrals,"
arXiv, 2008.
[21] A. Beling et al., "Monolithically integrated balanced photodetector and its
application in OTDM 160 Gbit/s DPSK transmission," in Electronics
Letters, vol. 39, no. 16, pp. 1204-1205, 7 Aug. 2003.
[22] Klyukanov, A & A. Gashin, P & Scurtu, R., "Ideality factor in transport
theory of Schottky barrier diodes," arXiv: 1204.0335, 2012.
[23] H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, Oxford
Fig. 8. Output current as a function of optical input power in the
differential structure for V = 1, 2 and 3 V
Finally, In order to evaluate performance of the proposed
device, dark current, responsivity, electrical bandwidth (BW)
and area parameters are calculated for both structures and
summarized in table III.
TABLE III.
COMPARISON OF SIMULATED RESULTS IN DIFFERENTIAL
(BALANCED) AND SINGLE MSM PLASMON DETECTORS (@V=3V)
Dark Current
Photocurrent
Differential
proposed Detector
negligible
31.81 μA
Single MSM
8.11 μA
40.04 μA
(load current)
(dark + detection)
Respossivity
0.1288 A/W
0.1292 A/W
Electrical BW factor
Active region area (WxL)
x 0.5
≈ 2 μm2
x 1
≈ 1 μm2
V. CONCLUSION
in a
reasonable
other
current while maintaining
In this paper, a differential asymmetric MSM IPE plasmon
detector is proposed and theoretically analyzed. The key
advantage of the proposed device is isolating the output from
performance
dark
characteristics
this
improvement result is in a trade-off with area and modulation
bandwidth. Performance of the new device is theoretically
investigated with semi-classic models. In a specific bias
condition (V=3v), output current is estimated to be 31.8 μA,
responsivity is predicted to be about 0.1288 A/W and bandwidth
factor is x0.5. These properties, which are achieved in a small
footprint 2 μm2, make the new device a good choice for low
noise integrated plasmonic applications.
range. However,
REFERENCES
[1] R. Stanley, "Plasmonics in the mid-infrared," nature photonics, vol. 6, pp.
University Press, 2nd ed., 1988.
409-411, 2012.
5
|
1810.08012 | 1 | 1810 | 2018-10-18T12:36:33 | Sound Absorption in Replicated Aluminum Foam | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | Sound absorption is an important technological task in machine-building and civil engineering. Porous materials are traditionally used for these purposes, as they are neither ignitable nor hygroscopic and thus suitable for noise oppression, first of all in means of transportation. Absorption of acoustic oscillation energy in porous metals occurs mainly due to viscous friction. A theoretical description of the process of energy viscous dissipation in a porous media on basis of Rayleigh classical model is given in paper [1], whereas the modern level of theory is set forth in Johnson-Champoux-Allard model [2]. Attempts of utilizing aluminum foam as the cheapest porous metal for sound absorption are related to forming of the open porous structure by rolling [3] or by heat treatment [4]. However, the sound absorption ratio of metal foam presented in these papers does not rise over 80%, whereas it reaches 99.9% in a wide frequency range when we take conventional sound-absorption materials (i.e. glass-wool). The problem of foamed metal consists of considerable reflection of acoustic waves from the surface. | physics.app-ph | physics | SOUND ABSORPTION IN REPLICATED ALUMINUM FOAM
Arcady Finkelstein1, Eugene Furman1, Dmitry Husnullin1, Konstantin Borodianskiy2
1Department of Foundry Engineering and Strengthening Technologies, the Ural Federal
University, Yekaterinburg 620002, Russia
2Zimin Advanced Materials Laboratory, Department of Chemical Engineering, Biotechnology
and Materials, Ariel University, Ariel 40700, Israel
* corresponding author: [email protected]
Keywords: sound absorption; replicated aluminum foam; wave number; wave impedance;
permeability; sound insulation.
1. Introduction
Sound absorption is an important technological task in machine-building and civil
engineering. Porous materials are traditionally used for these purposes, as they are neither
ignitable nor hygroscopic and thus suitable for noise oppression, first of all in means of
transportation. Absorption of acoustic oscillation energy in porous metals occurs mainly due to
viscous friction. A theoretical description of the process of energy viscous dissipation in a
porous media on basis of Rayleigh classical model is given in paper [1], whereas the modern
level of theory is set forth in Johnson-Champoux-Allard model [2]. Attempts of utilizing
aluminum foam as the cheapest porous metal for sound absorption are related to forming of the
open porous structure by rolling [3] or by heat treatment [4]. However, the sound absorption
ratio of metal foam presented in these papers does not rise over 80%, whereas it reaches 99.9%
in a wide frequency range when we take conventional sound-absorption materials (i.e. glass-
wool). The problem of foamed metal consists of considerable reflection of acoustic waves from
the surface.
Replicated aluminum foam [5] (fig.1) does not possess closed porosity at all and has much
larger gap, which provides the level of reflection lower than that of metal foams, so replicated
aluminum foam is a promising sound-absorption material. Fernández et.al studied dependency
of sound absorption coefficient at different frequencies on the bed fraction, plate thickness and
depth of air gap of replicated aluminum foam produced by infiltration of pre-sintered filling
material under high pressure [6]. Han et.al found dependency of sound absorption ratio on the
bed fraction and plate thickness of replicated aluminum foam within the technology of vacuum
infiltration of pre-sintered bed [7]. The sound absorption coefficient of replicated aluminum
foam reached 98%. The technology of loose bed vacuum infiltration allows managing geometric
parameters of the porous structure [8]. Aluminum is promised material in today's metallurgy
industry [9-12] so it becomes possible to predict the acoustic behavior of replicated aluminum
foam which typical structure shown in Fig. 1.
1-68
Fig. 1.Replicated aluminum foam structure. Magnification X10.
2. Experimental
2.1. Theoretical studies
The classical model has been taken from the work of Cremer [1] as a basis of theoretical
calculation of sound absorption in replicated aluminum foam, while geometrical parameters of a
porous structure conform to the previously obtained model in [8].To provide a picture of
propagation of acoustic waves of low and medium intensity (acoustic Mach number Mac<0.5) in
the air, sound absorption effects can be well described by the following wave equation:
where ρ is the media density, K is bulk modulus of the media elasticity, and p is an instant value
of sound pressure. The equation has an analytical solution conforming to propagation of
decaying plane sine waves in the media; the analysis of this equation shows that the relation of
sound pressure to oscillating particle velocity is a constant value and is referred as wave
impedance of the media being one of wave parameters of the media:
The second wave parameter of the media is the propagation constant which characterizes
sound wave decay in the media:
where 𝛽𝛽 is the rate of decay, k is the acoustic wave number, and 𝑖𝑖 is the imaginary unit √𝑖𝑖2=
−1.
Sound absorption properties of a material are characterized by the sound absorption
coefficient:
𝜌𝜌𝜕𝜕2𝑝𝑝𝜕𝜕𝑡𝑡2=𝐾𝐾𝜕𝜕2𝑝𝑝𝜕𝜕𝑥𝑥2
𝐾𝐾=𝜌𝜌𝜕𝜕𝑝𝑝𝜕𝜕𝜌𝜌
𝑊𝑊=𝑝𝑝𝑣𝑣
𝛾𝛾=𝛽𝛽+𝑖𝑖𝑖𝑖
1-69
(1)
(2)
(3)
(4)
𝛼𝛼=𝐼𝐼𝑓𝑓𝑓𝑓𝑓𝑓𝑓𝑓−𝐼𝐼𝑟𝑟𝑟𝑟𝑓𝑓
𝐼𝐼𝑓𝑓𝑓𝑓𝑓𝑓𝑓𝑓
𝛼𝛼=1−�𝑍𝑍−1
𝑍𝑍−1�2
𝑍𝑍= 𝑍𝑍𝑊𝑊0
4𝑋𝑋�
(𝑋𝑋�+1)2+𝑌𝑌�2
𝛼𝛼=
(6)
(7)
(8)
(9)
(10)
where 𝐼𝐼𝑓𝑓𝑓𝑓𝑓𝑓𝑓𝑓 is the incident wave intensity; 𝐼𝐼𝑟𝑟𝑟𝑟𝑓𝑓 is the reflected wave intensity. The value shows a
proportion of sound energy absorbed by the material or structure. The sound absorption
coefficient can also be expressed via dimensionless impedance of the material or structure:
(5)
where 𝑍𝑍 is dimensionless impedance of the material or structure (from here on: values with
upper streak are neon-dimensional zed parameters in relation to air properties), 𝑍𝑍 is impedance
of the material or structure, 𝑊𝑊0 is air wave impedance. 𝑍𝑍=𝑋𝑋�+𝑖𝑖𝑌𝑌� is a complex value.
Equation (6) canbere-written with the use of present values:
Two variants of sound absorption structures have been studied in this survey: a porous
material on a rigid wall and a porous material with air gap between one and rigid wall (Fig. 2).
Fig. 2. Patterns of sound absorption structures for calculation of dimensionless
impedance: 1: replicated aluminum foam, 2: air.
In the first example, the present and imaginary parts of the dimensionless impedance should
be calculated according to the following equations:
𝑋𝑋�=𝑊𝑊�𝑥𝑥sinh(2𝛽𝛽𝑙𝑙1)+𝑊𝑊�𝑦𝑦sin(2𝑖𝑖𝑙𝑙1)
cosh(2𝛽𝛽𝑙𝑙1)−cos(2𝑖𝑖𝑙𝑙1)
𝑌𝑌�=𝑊𝑊�𝑦𝑦sinh(2𝛽𝛽𝑙𝑙1)−𝑊𝑊�𝑥𝑥sin(2𝑖𝑖𝑙𝑙1)
cosh(2𝛽𝛽𝑙𝑙1)−cos(2𝑖𝑖𝑙𝑙1)
In the second example, there land imaginary parts of the dimensionless impedances should be
calculated according to the following equations:
1-70
2𝑋𝑋�=𝑊𝑊�𝑥𝑥(𝑎𝑎2+𝑊𝑊�2)sinh(2𝛽𝛽𝑙𝑙1)+𝑊𝑊�𝑦𝑦(𝑎𝑎2−𝑊𝑊�2)sin(2𝑖𝑖𝑙𝑙1)−
−2𝑎𝑎𝑊𝑊�𝑥𝑥𝑊𝑊�𝑦𝑦(𝑐𝑐ℎ(2𝛽𝛽𝑙𝑙1)−cos(2𝑖𝑖𝑙𝑙1))
𝑎𝑎2(𝑐𝑐ℎ(2𝛽𝛽𝑙𝑙1)−cos(2𝑖𝑖𝑙𝑙1))+2𝑎𝑎(𝑊𝑊�𝑥𝑥sin(2𝑖𝑖𝑙𝑙1)
−𝑊𝑊�𝑦𝑦sinh(2𝛽𝛽𝑙𝑙1))+𝑊𝑊�2(cosh(2𝛽𝛽𝑙𝑙1)+cos(2𝑖𝑖𝑙𝑙1))
2𝑌𝑌�=𝑊𝑊�𝑥𝑥(𝑊𝑊�2−𝑎𝑎2)sin(2𝑖𝑖𝑙𝑙1)+𝑊𝑊�𝑦𝑦(𝑊𝑊�2+𝑎𝑎2)sinh(2𝛽𝛽𝑙𝑙1)−
−2𝑎𝑎(𝑊𝑊�𝑥𝑥2cos(2𝑖𝑖𝑙𝑙1)+𝑊𝑊�𝑦𝑦2cosh(2𝛽𝛽𝑙𝑙1))
𝑎𝑎2(𝑐𝑐ℎ(2𝛽𝛽𝑙𝑙1)−cos(2𝑖𝑖𝑙𝑙1))+2𝑎𝑎(𝑊𝑊�𝑥𝑥sin(2𝑖𝑖𝑙𝑙1)−
−𝑊𝑊�𝑦𝑦sinh(2𝛽𝛽𝑙𝑙1))+𝑊𝑊�2(cosh(2𝛽𝛽𝑙𝑙1)+cos(2𝑖𝑖𝑙𝑙1))
where a=cot(k0l2); k0 is the wave number in air; l1 and l2 ‒ see Fig. 1; W�x, W�y are real and
imaginary parts of wave impedance of replicated aluminum foam; W� is the modulus of wave
imaginary parts of complex values W and γ for replicated aluminum foam as per dependencies
impedance of replicated aluminum foam. Thus, the task boils down to calculation of real and
[1]:
𝑊𝑊�𝑥𝑥=1𝜎𝜎�𝜒𝜒ӕ2(1+�1+𝜂𝜂2)
𝑊𝑊�𝑦𝑦=−𝜂𝜂𝜎𝜎�𝜒𝜒ӕ2
1
(1+�1+𝜂𝜂2)
𝛽𝛽=𝜂𝜂�𝜒𝜒2ӕ
1
(1+�1+𝜂𝜂2)
𝑖𝑖�=�𝜒𝜒2ӕ(1+�1+𝜂𝜂2)
(11)
(12)
(13)
(14)
(15)
(16)
compression in pores is characterized with relation of effective density to free air density
(structure factor χ=ρэф/ρо). It is obvious that the ratio of maximum to minimum pore sizes has
impact on air compression. As per [8], the structure factor for replicated aluminum lies within
values 2-9 and is determined by the bed fraction, porosity and infiltration pressure.
where ӕ is the elasticity ratio is taken as equal to 1 as per [1]; 𝜒𝜒 is the structure factor. Air
𝜎𝜎 is the ratio of the area of transparent pores exposed on the sample surface and the overall
𝜂𝜂 is the parameter characterizing ration between friction resistance and inertial resistance of
where 𝜋𝜋 is oscillation frequency; 𝑟𝑟is flow resistivity. The latter should be defined as:
area of the outer side of the porous sample; it is determined by the structured sphere model
(fictitious ground) of packed bed and depends on porosity. For replicated aluminum foam it
varies in range 0.70-0.79 [13].
air in pores; it is determined by the following equation:
(17)
(18)
𝜂𝜂= 𝑟𝑟𝜎𝜎2𝜋𝜋𝜋𝜋𝜒𝜒𝜌𝜌0
𝑟𝑟= 𝜇𝜇𝐾𝐾𝑝𝑝𝑟𝑟𝑟𝑟𝑝𝑝
1-71
where 𝜇𝜇 is dynamical viscosity; 𝐾𝐾𝑝𝑝𝑟𝑟𝑟𝑟𝑝𝑝 is replicated aluminum foam permeability. The latter is
determined basing on parameters of the porous structure by the theoretical dependence.
A theoretical calculation of the sound absorption factor was realized in Microsoft Excel
spreadsheet processor by the above mentioned scheme.
2.2. Sample preparation and experimental
Samples were prepared by the loose NaCl bed vacuum infiltration technology. Samples were
made of Al alloy A356, 80 mm dia. in accordance with the factor sunder study:
1. Fraction of the bed used: 0.4-0.63 mm, 0.8-1 mm, 1.5-2 mm.
2. Thickness of samples: 10 and 20 mm.
3. Porosity: 53-57% (basic, loose bed), 58-62% (bed compaction by vibration), and 66-70%
(compaction by vibration with addition of 0.2% graphite powder). Porosity of samples was
measured indirectly by weighing (specific weight of the initial aluminum alloy was
determined in advanced).
4. Air pressure drop at infiltration defining permeability factor: 1 bar and 0.25 bar.
Sound absorption coefficient at normal incidence was measured by means of a sound level
meter system made by Bruel & Kjaer Company based on the acoustic spectrum analyzer 2144 in
the research center of AvtoVAZ JSC (Samara, Russia) in an impedance tube similarly to [6],
with an air gap of 20 mm deep and without it. A mean arithmetic value of three experimental
samples is related to each point.
3. Results and Discussion
The conducted experiments (Fig. 3-7) showed, similarly to the data of [7], a very high sound
absorption ratio, up to 99% in a narrow frequency range. If an air gap is presents due to the
interference effects, sound absorption will increase in a wide frequency range, whereas the
position of frequency maximums will shift toward low frequencies and an additional maximum
will be generated at high frequency which is well confirmed by the Cremer model [1]. The
highest sound absorption factor is achieved at the minimum interrelation of maximum and
minimum pore sizes, which is confirmed by increase of sound absorption of replicated
aluminum foam both as the bed fraction decreases and as the pressure drop decreases. Based on
this conclusion, one can suppose that the low sound absorption ratio in [6] is a consequence of
the large pressure drop as infiltration is performed (the value of this pressure drop is not
identified in the presented work), and thus, a consequence of the large interrelation of maximum
and minimum pore sizes. Increase of a sample thickness will shift the maximum of sound
absorption factor towards low frequencies, whereas its absolute value will decrease. Impact of
porosity is also obvious, where of a gap value will increase, i.e. reflection of acoustic waves
from a surface of a porous plate will decrease which causes the sound absorption factor to
increase. Porosity increase will also slightly shift the maximum of sound absorption toward high
frequencies.
a)
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Experimental: sample
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Theoretical: sample
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Frequency, Hz
Fig. 3. The samples are made of replicated aluminum foam with 0.4-0.63 mm pore
size and 60% porosity under 0.5 bar infiltration pressure drop. (a) Sound absorption
coefficient dependency on frequency of samples with different thickness without air
gap; (b) Sound absorption coefficient dependency on frequency of samples with
different thickness with 20 mm air gap.
1-73
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size 0.4-0.63 mm
Experimental: Pore
size 1.5-2 mm
Theoretical: pore
size 0.4-0.63 mm
Theoretical: pore
size 1.5-2 mm
Experimental: Pore
size 0.4-0.63 mm
Experimental: Pore
size 1.5-2 mm
Theoretical: pore
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Theoretical: pore
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Fig. 4. The samples are made of replicated aluminum foam with 60% porosity and
10 mm thickness under 0.5 bar infiltration pressure drop. (a) Sound absorption
coefficient dependency on frequency of samples with different mean pore diameter
without air gap; (b) Sound absorption coefficient dependency on frequency of
samples with different mean pore diameter with 20 mm air gap.
1-74
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Experimental:
porosity 60%
Experimental:
porosity 70%
Theoretical:
porosity 60%
Theoretical:
porosity 70%
Experimental:
porosity 60%
Experimental:
porosity 70%
Theoretical:
porosity 60%
Theoretical:
porosity 70%
Fig. 5. The samples are made of replicated aluminum foam with 0.4-0.63 mm pore
size and 10 mm thickness under 0.5 bar infiltration pressure drop. (a) Sound
absorption coefficient dependency on frequency of samples with different porosity
without air gap; (b) Sound absorption coefficient dependency on frequency of
samples with different porosity with 20 mm air gap.
1-75
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Experimental:permeability 3.92E-
10 / min pore size 0.07 mm /
infiltration pressure drop 0.25 bar
Theoretical dependency:
permeability 3.92E-10 / min pore
size 0.07 mm / infiltration
pressure drop 0.25 bar
Experimental: permeability 8.47E-
11 / min pore size 0.042 mm /
infiltration pressure drop 1 bar
Theoretical: permeability 8.47E-11
/ min pore size 0.042 mm /
infiltration pressure drop 1 bar
Fig. 6. Theoretical and experimental sound absorption coefficient dependency on
frequency for samples with different permeability. The samples are made of
replicated aluminum foam with 60% porosity, 0.4-0.63 mm pore size and 10 mm
thickness. Samples tasted on 20 mm air gap apparatus.
Using the data presented in [6, 7] concerning sound absorption for the theoretical analysis
will not seem possible, as these works do not identify such important structural parameters of a
porous media as the pore minimum size and the permeability factor which depends on it. The
porous structure model [8] used for a calculation pattern taking into account only air viscous
resistance to friction is well confirmed by experimental data. The calculated sound absorption
value occurs to be somewhat lower than the experimental one, probably due to energy heat
dissipation in a porous media, as it is shown in [2]. However, Cremer's model [1] well predicts a
frequency position of sound absorption maximum, while using of the model [2] requires
determining not only geometric but also heat-geometric parameters of a porous structure, which
does not seem rational, as it makes the model more complicated and does not provide any
practical effect. According to the experience-acknowledged model, the maximum sound
absorption will be provided by using of a fine bed fraction with the minimum pressure drop and
maximum bed porosity. To regulate the frequency maximum of sound absorption, it is rational
to use the porous layer thickness (Fig. 7) and the depth of air gap (Fig. 8).
1-76
Fig. 7. Influence of porous layer thickness on a sound absorption maximum.
Fig. 8. Influence of depth of air gap on sound absorption maximum.
4. Conclusions
The derived dependencies are used for designing of sound-absorptive plates made of
replicated aluminum foam at Composite Materials LLC (Kirovgrad, Russia) for industrial
equipment emitting noise in a narrow frequency range.
Acknowledgments
The article is composed basing on results of the researches conducted within realization and
at the expense of funding of Improving Competitiveness Program "5-100-2020". The work was
supported by Act 211 Government of the Russian Federation, contract № 02.A03.21.0006.
References
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2. Y. Champoux, J.F. Allard, Dynamic tortuosity and bulk modulus in air-saturated porous
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(11), 7528‒7539.
4. A. Byakova, Y. Bezim'yanny, S. Gniloskurenko, T. Nakamura, Fabrication method for
closed-cell aluminum foam with improved sound absorption ability. Procedia Mater
Science 2014, 4, 9‒14.
5. H.A. Kuchek, Method of producing clad porous metal articles. Patent US 3138856, 1964.
6. P.M. Fernández, L.J. Cruz, L.E. García Cambronero, C. Díaz, M.A. Navacerrada, Sound
absorption properties of aluminum sponges manufactured by infiltration process. Adv Mater
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7. F. Han, G. Seiffert, Y. Zhao, B. Gibbs, Acoustic absorption behavior of an open-celled
aluminum foam. J Appl Phys D 2003, 36 (3), 294‒302.
8. E. Furman, A. Finkelstein, M. Cherny, Permeability of aluminum foams produced by
replication casting. Metals 2013, 3 (1), 49‒57.
9. V. Selivorstov, Y. Dotsenko, K. Borodianskiy, Influence of Low-Frequency Vibration and
Modification on Solidification and Mechanical Properties of Al-Si Casting Alloy, Materials
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794.
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nanoparticles and gas-dynamic treatment on Al casting alloys, Metals 2015, 5, 2277-2288.
12. V. Selivorstov, Y. Dotsenko, K. Borodianskiy, Gas-dynamic influence on the structure of
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1-78
|
1908.07685 | 1 | 1908 | 2019-08-21T02:59:30 | Characterising Quantum Devices at Scale with Custom Cryo-CMOS | [
"physics.app-ph",
"cond-mat.mes-hall",
"quant-ph"
] | We make use of a custom-designed cryo-CMOS multiplexer (MUX) to enable multiple quantum devices to be characterized in a single cool-down of a dilution refrigerator. Combined with a packaging approach that integrates cryo-CMOS chips and a hot-swappable, parallel device test platform, we describe how this setup takes a standard wiring configuration as input and expands the capability for batch-characterization of quantum devices at milli-Kelvin temperatures and high magnetic fields. The architecture of the cryo-CMOS multiplexer is discussed and performance benchmarked using few-electron quantum dots and Hall mobility-mapping measurements. | physics.app-ph | physics |
Characterising Quantum Devices at Scale with Custom Cryo-CMOS
S. J. Pauka,1, ∗ K. Das,2, ∗ J. M. Hornibrook,2 G. C. Gardner,3, 4
M. J. Manfra,5, 3, 4, 6 M. C. Cassidy,2 and D. J. Reilly1, 2, †
1ARC Centre of Excellence for Engineered Quantum Systems,
School of Physics, The University of Sydney, Sydney, NSW 2006, Australia.
2Microsoft Quantum Sydney, The University of Sydney, Sydney, NSW 2006, Australia.
3Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA.
4Microsoft Quantum Purdue, Purdue University, West Lafayette, IN 47907, USA.
5Department of Physics and Astronomy, Purdue University, West Lafayette, IN 47907, USA.
6School of Materials Engineering and School of Electrical and Computer Engineering,
Purdue University, West Lafayette, IN 47907, USA.
(Dated: August 22, 2019)
We make use of a custom-designed cryo-CMOS multiplexer (MUX) to enable multiple quantum
devices to be characterized in a single cool-down of a dilution refrigerator. Combined with a packag-
ing approach that integrates cryo-CMOS chips and a hot-swappable, parallel device test platform,
we describe how this setup takes a standard wiring configuration as input and expands the capabil-
ity for batch-characterization of quantum devices at milli-Kelvin temperatures and high magnetic
fields. The architecture of the cryo-CMOS multiplexer is discussed and performance benchmarked
using few-electron quantum dots and Hall mobility-mapping measurements.
I.
INTRODUCTION
Developing large-scale quantum machines brings
new and distinct challenges not apparent in early-
demonstration experiments with single devices or few-
qubit systems1 -- 3. Although many fundamental scientific
barriers stand in the path to scale-up, significant progress
is likely if engineering methodologies4,5 can be leveraged
to establish processes that reliably and repeatedly pro-
duce devices and subsystems with high-yield and deter-
ministic performance. Key to such approaches is the abil-
ity to fabricate and characterize statistically significant
numbers of devices, a major challenge when electrical
measurements must be performed at milli-Kelvin tem-
peratures in the presence of high magnetic fields.
Standard techniques for electrical test, such as the use
of wafer-scale probe-stations, are challenging to imple-
ment in the deep-cryogenic environment. These difficul-
ties are not fundamental barriers but rather technical,
for instance, the challenge of connecting room tempera-
ture electronics to a large number of devices-under-test
below 1 K. A brute force approach, in which each device
is independently connected to test electronics via its own
wiring, becomes problematic for large wire-counts due
to the thermal leak of the wiring itself6, the footprint
of bulky connectors, and the likelihood of failure that
stems from using meters of cabling across large temper-
ature gradients. Together these aspects usually lead to
device characterization proceeding via serial cool-downs
of a dilution refrigerator, with each cycle taking several
days.
Overcoming the challenge of multiple cool-downs, the
need to perform high-throughput characterization has
motivated previous work in realizing multiplexing devices
and circuits. These include approaches that directly inte-
grate the multiplexing switches into the quantum device
chip7 -- 9 using the same technology. Embedding the multi-
plexer in this way however, increases the complexity and
adds further steps to the fabrication process for quantum
devices.
Here we describe a platform that decouples the quan-
tum device and multiplexing circuit, fabricating a large-
number of multiplexer chips via tape-out to a commercial
CMOS foundry. This platform enables multiple quantum
devices to be characterized in a single cool-down and with
a standard cryostat wiring configuration. Our multi-
plexer (MUX) is based on custom cryo-CMOS technology
and specifically designed for operation below 100 mK. In
the particular implementation reported here, 16 indepen-
dent 1:5 MUX switches per die are configured by a room
temperature microcontroller. The switches are based on
parallel NMOS and PMOS transistors connected in a
transmission gate (TG) topology, allowing for full rail-to-
rail voltage swing of both the inputs and outputs. Our
design further allows ad-hoc reconfiguration and daisy
chaining of the multiplexer to suit particular device char-
acterization needs.
Demonstrating both control of high-impedance bias
lines and low-impedance transport measurements, we
tune a GaAs quantum dot to the few electron regime
via the Cryo-CMOS MUX, and measure the Hall mobil-
ity across a 2" InAs heterostructure. By making many
parallel mobility measurements in a single cool-down we
are able to map the variation in mobility across a wafer,
enabling fast feedback between the growth of materials
and device performance, an advantage for realizing and
optimizing topological quantum devices.
II. DEVICE DETAILS
A schematic of the experimental setup is shown in
Fig. 1 (a). Room temperature electronics are used to
generate and measure voltages and currents in a circuit
2
FIG. 1.
(a) Experimental setup employing our Cryo-CMOS multiplexer chip to allow the simultaneous characterization of up
to 25 DUTs at milli-kelvin temperature in a single cool-down. (b) Circuit block diagram of the multiplexer chip. Power supply
pins VDD and VSS are not shown in the diagram, but can be set such that both negative and positive bias voltages may be
applied, such that VSS <= Vout <= VDD. (c) Die photo of the fabricated chip. Inset shows part of the core switching circuit.
that comprises the device under test (DUT). The MUX
chip is located at the milli-Kelvin stage of a dilution re-
frigerator, on a sample circuit board (PCB) adjacent to
the DUT, and routes signals to and from it. Each MUX
chip consists of 16 instances of a 1:5 analog multiplex-
ing switch made from a 0.35 µm AMS CMOS process10.
The input of one multiplexer can be connected to any
of the 5 outputs or disconnected entirely. MUX chips
are controlled by a total of 6 control lines, including 2
power supply lines, and may be daisy chained together
to increase the switch count. Software control over the
switching topology is provided by a microprocessor11 lo-
cated at room temperature.
A circuit block diagram of the CMOS MUX is shown
in Fig. 1 (b). The multiplexing switches are of trans-
mission gate (TG) topology, consisting of parallel NMOS
and PMOS transistors of length 0.7 µm and width 40 µm
and 120 µm respectively. The TG switch structure al-
lows for a maximum rail-to-rail input and output voltage
swing of VDD − VSS = 3.3 V. For our initial characteri-
zation, VDD is set to 3.3 V and VSS is set to 0 V, and are
the MUX chip's high and low power supply respectively.
We emphasize that by the use of lower values for VSS
and VDD, the MUX can be used to provide negative bias
voltages. The use of a TG switch structure is necessary
to ensure operation across the entire supply range. While
using a single transistor switch design reduces the layout
area and eliminates the need for complementary control
signals, it limits the maximum output voltage swing to
between VSS and VDD−Vth,n if a single NMOS transistor
is used, or VSS + Vth,p and VDD if a single PMOS tran-
sistor is used, where Vth,n(p) are the threshold voltage for
NMOS (PMOS). The output swing can potentially be-
come even more limited as the devices are cooled due to
an increase in Vth,n(p) as the intrinsic carrier density of
the bulk, ni, is exponentially dependent on temperature.
As such, ni drops sharply at deep cryogenic temperatures
(< 40 K) due to bandgap widening and bulk carrier freeze
out. This causes the bulk Fermi-level to increase, result-
12,13. The shift in threshold
ing in an increase in Vth,n(p)
voltage, ∆Vth,n(p) depends on n-doping (p-doping) con-
centration. For the 0.35 µm AMS process used for our
devices, our measurements on transistor test structures
indicate that Vth,n increases from 0.5 V to 0.75 V as the
chip is cooled from room temperature to T = 6 K (similar
measurements were reported in14). The shift in Vth,p is
(b)×16×16×16×16×16DAC andSignal Routing×16×4×4×2MeasurementControlPowerPCControlReadout(Lockin/AMP)RTmK×25DUTDUTDUTDUTDUTDUTDUTDUT(a)ControlOutput BlockTestCircuits1mmI2O2,5(c)Buffer DFFDQDQDQDQDQDQDQDQDQDQDQDQDQDQDQDQDQDQDQDQTG SwitchShift Register DFFO1,1O1,2O1,3O1,4O1,5I1I16O16,5O16,4O16,3O16,2O16,1DIDOCLKILDCLKO more severe, rising from 0.8 V at 300 K to 1.35 V at 6 K.
Crucially, the threshold voltage of PMOS devices does
not saturate at deep cryogenic temperatures but rather
continues to increase as the temperature is lowered.
An optical micrograph of the die, shown in Fig. 1(c),
highlights the key regions of the multiplexer. The power
supply and digital control pins are placed on the left
hand side of the chip, and the multiplexing circuit and
IO pads are laid out in a symmetrical staggered arrange-
ment taking up 3.1 × 0.8 mm of the core area. We note
that the majority of this area is dominated by IO pads,
whose area may be further miniaturized through the use
of high-density interconnect technologies such as flip-chip
bonding15. The control interface is a simple shift register
(edge triggered D flip-flop, DFF) bank with serial data
(DI) and clock (CLKI) inputs from an external controller
(see Fig. 1 (b)). A second row of registers is used to buffer
the switch controls. This enables the switch configuration
to be modified without affecting the state of the outputs.
The change takes effect concurrently only at the rising
edge of a global load (LD) signal. Notwithstanding com-
prehensive low temperature models and rigorous timing
analysis, it was imperative to improve the circuit's im-
munity to timing violation by design. Therefore DI is
shifted from left to right of the flip-flop chain whereas
CLK is buffered inside each flip-flop and passed onto the
cell to its left. Though the cost of this design is ex-
tra logic gates and delay, propagating the DI and CLKI
signals from opposite direction guarantees proper logic
operation because data always arrives before the rising
edge of the clock. Further, the clocking events and sub-
sequent logic changes in each flip-flop are then slightly
staggered. This disperses the sudden draw of large load
current from the power supply that would have other-
wise occurred if all the flip-flops were clocked simultane-
ously. This is a pragmatic design, driven by the unique
challenges of cryogenic measurements that involve power
supply or digital signals being fed from room tempera-
ture instrumentation via meters of cables. In such setups,
maintaining stringent delay matching or supply regula-
tion can be difficult when compared to conventional room
temperature bench-top configurations.
By appropriate choice of topology, MUX chips may be
chained together arbitrarily with no increase in the num-
ber of control lines. This is facilitated by the chaining
of shift registers between chips, since the CLKI and DI
pins are buffered and brought off chip on the clock out
(CLKO) and data out (DO) pins respectively (see Fig. 1
(b)). Power supply and LD signals may be shared be-
tween dies. For example, the chip may be converted to
a 1 : 80 multiplexer by tying all inputs together. Alter-
natively, by the use of 6 chips, it is possible to create
16 × 1 : 25 multiplexers in the arrangement shown in
Fig. 1 (a). Thus, the design is modular, allowing both
the number of inputs and outputs to be increased without
a corresponding increase in control lines, at the cost of
a linear reduction at the rate that the state of the MUX
may be changed.
3
FIG. 2. Characterization of the performance of the MUX
chip at T = 300 K and 4 K. (a) Multiplexing at 4 K with a
scope trace showing Vout connecting to Vin = 3 V when the
MUX switch is turned on. (b) Delay and (c) rise time through
the MUX switches at T = 300 K and 4 K. (d) On-state re-
sistance estimated from delay and rise-time data, Ron,est,
or measured directly using a lock-in amplifier, Ron,DC , at
T = 300 K and 4 K.
The switches in the MUX chip are designed to drive
both high-impedence bias lines, such as the bias gates
of a quantum dot device, as well as to probe transport
phenomena through devices, while maintaining a low on-
state resistance (< 200 Ω). The actual on-state resistance
of the TG switch will be a function of applied source and
drain voltage, VSD, of the transistors. In steady state op-
eration, for both biasing and transport applications, the
transistors in the on-state are expected to have a negli-
gibly small drain-source voltage, VDS (cid:28) 10 mV, where
they are designed operate in the ohmic region. The on-
state resistance of the transistor can be expressed as,
Ron ∼
W
µCoxL(VGS − Vth)
(1)
where µ is carrier mobility, Cox is gate capacitance per
unit area, W , L are transistor width and length, and VGS
is gate to source voltage. The effect of VDS is negligible
in the limit that VGS − Vth (cid:29) VDS.
At fixed temperature Ron is a non-linear function of
input voltage Vin, and supply voltages VDD and VSS.
Furthermore, the competing effect of increased Vth and
µ with cooling will cause Ron to vary depending on op-
erating temperature13,16. The ratio of on-resistance at
Ron,estRon,estRon,DCRon,DC300K:4K:2030405060Delay (ns)05101520Count80100120140160180Rise Time (ns)0102030Count0.00123Voltage (V)0.10.2(b)(a)(c)04812Switch Pair Number80120160Ron (Ω)(d)Time (μs)VinVoutLD4K300K4K300K T = 300 K and 4 K, γ = Ron,4K/Ron,300K, for both
NMOS and PMOS transistors operating in the ohmic re-
gion can be expressed as:
γn =
µn,300K
µn,4K
×
1 −
1
∆Vth,n
V DD − Vin − Vth,n,300K
γp =
µp,300K
µp,4K
×
1 −
1
∆Vth,p
Vin − Vth,p,300K
(2)
(3)
Here ∆Vth,n(p) is defined as Vth,n(p),4K − Vth,n(p),300K.
The operating temperature and corresponding transis-
tor type is denotes in the symbol subscript. We mea-
sure µp,4K to have increased by a factor of 2.4, whereas
µn,300K is measured to be 4 times higher compared to its
room temperature value14. Lower µ together with higher
Vth will cause Ron,p,4K to be much higher than Ron,n,4K.
To experimentally verify the performance of the Cryo-
CMOS MUX chip at cryogenic temperatures, we wire-
bond the dies to a test PCB for measurement at T =
300 K and 4 K. The outputs of 13 pairs of switches were
wirebonded in series to measure the performance of the
switches through the cryostat. The supply voltages for
the test were set to VDD = 3 V and VSS = 0 V respec-
tively. In addition, a pair of lines were shorted directly
on the PCB, and used to calibrate the fixed resistance
and delay through the cryostat. A representative trace,
showing the output voltage Vout being pulled high as the
switch is closed, is shown in Fig. 2 (a). A slight delay
between the LD pin being asserted and Vout being pulled
high is visible, as well as a finite rise time which is set
by the resistance of the switch and capacitance of wiring
through the fridge. Histograms of delay and rise time
across multiple switches in shown in Fig. 2 (b) and Fig. 2
(c) respectively at both 300 K (red), and 4 K (blue). A
faster response is observed at 4 K, which we attribute to
the reduction of Ron, leading to a faster switching time.
Finally, we measure the on-state resistance, Ron, of the
switches in two ways. First, we directly measure the on-
state resistance of the switches using conventional lock-in
techniques, with a 100 µV excitation, through a shorted
pairs of switches. To find the individual switch resistance,
Ron,DC, the previously calibrated resistance of the cryo-
stat wiring is subtracted, and the result is divided by
2. Second, we extract the on-state resistance from the
measurement of rise time across the 13 pairs, using the
measured cable capacitance and known impedance of the
measurement equipment, which we denote Ron,est. The
measured values across all switches is plotted in Fig. 2
(d), with both techniques yielding values in good agree-
ment with each other.
4
(a) Photograph of the multiplexer characterization
FIG. 3.
PCB showing the MUX chip (red), and an equivalent quan-
tum dot connected to filtered DC lines via the MUX chip
(blue). (b) False-color SEM of a quantum dot device, fab-
ricated on a GaAs/(Al,Ga)As heterostructures. Ti/Au sur-
face gates (gold) are used to define two quantum wells (blue
dots). Locations of contacts to 2-dimensional electron gas are
indicated in orange boxes.
(c) Charge stability diagram of
a double quantum dot showing the characteristic honeycomb
pattern of a double quantum dot. White dashed lines indicate
charge transitions and are a guide to the eye.
III. EXPERIMENTAL APPLICATIONS
A. Quantum Dots
In order to determine the suitability of our multiplexer
for quantum device characterization, we connect it to
the gates and ohmic contacts of a quantum dot device
and perform transport measurements. A typical quan-
tum dot device will have charging energies of around
100 µeV17. For a well defined quantum dot to be formed,
the electrical noise and heat introduced by our proxi-
mal Cryo-CMOS multiplexer must be negligible relative
to the charging energy18, thus quantum dot measure-
-550-600-650-700-550-600-650-700VRW (mV)VLW (mV)0.01.02.0Current (nA)(a)(b)(c)1cm1μmLWLPCRPRWQPCNO1O2O3(N, M)(N+1, M)(N, M+1)(N+1, M+1) 5
FIG. 4.
(a) Photograph of multiplexed characterization PCB showing MUX die (red) with 5 daughter-boards (orange) allowing
measurements, and an additional daughter-board (green), that has a connection to the fridge wiring bypassing the MUX chip.
(b) Cross-section of mother-board, interposer and swappable daughter-board. (c) Optical micrograph of Hall bar device for
characterizing mobility. A top gate (gold) allows for tuning of the density in the device. (d) Cross section of measured InAs
heterostructure.
(e) Resistance of shorted MUX lines as a function of perpendicular magnetic field, measured across four
separate pairs of switches. (f) Hall resistivity as a function of VTG for n=9 Hall bar devices, measured across two cool-downs.
(g) Extracted mobility as a function of position on growth wafer.
ments provide a means of determining the suitability of
our MUX for purpose. The quantum dot device is fab-
ricated on an MBE grown GaAs/(Al,Ga)As heterostruc-
ture, which forms a 2-dimensional electron gas (2DEG)
91 nm below the surface. TiAu gates are patterned on the
surface to define the dots, separated by an 10 nm HfO2
dielectric. An optical micrograph of the device is shown
in Fig. 3 (a), with the MUX chip highlighted in the red
box and the quantum dot device highlighted in the blue
box. A false-color SEM of a similar device is shown in
Fig 3 (b). The sample is mounted at the milli-Kelvin
stage of a dilution refrigerator with a base temperature
of 8 mK. Negative voltages are applied to the surface
gates (gold) to create quantum dots (blue) containing a
discrete number of electrons. The occupancy of each dot
is denoted (N, M ) where N (M ) is the number of elec-
trons on the left (right) quantum dot. Current is passed
through the quantum dot via contacts to the 2DEG, O2
and O3, where current is only able to flow when there
are available electron states in both the left and the right
quantum dot. In order to allow negative bias voltages to
be used, the MUX chip is operated with VSS = −2 V and
VDD = 1 V.
In Figure 3(c), the current through the quantum dot
is shown, with both gates and ohmic contacts routed
through the Cryo-CMOS MUX chip. Conventional lock-
in techniques are used for current readout with an exci-
tation voltage of 100 µV across the device. A honeycomb
pattern characteristic of a double quantum dot is visible,
with charge transitions indicated by dotted lines. Similar
measurements were carried out for different gate configu-
rations. In the steady-state we find the additional heat or
noise generated by the MUX chip to be negligible, with
the base temperature of the cryostat unaffected by the
multiplexer.
B. Mobility Characterization
Finally, we demonstrate the use of our multiplexer
for performing batch materials characterization of InAs
heterostructures, of interest for the purpose of realizing
topological qubits19. Here we are focused on determin-
ing how parameters such as the carrier mobility of the
electron gas varies across a wafer, a key metric for device
performance20. To carryout batch-style measurements
we have developed a device packaging approach that al-
lows many quantum devices to be bonded onto separate
daughter PCBs21, that are collectively mounted on a
motherboard that also houses the CMOS MUX chips,
as shown in Fig. 4(a). This setup allows mounting of
five dies, each containing 4 devices, in the dilution refrig-
erator in a single cool-down, with an additional sixth die
configured such that its electrical connections bypass the
cyro-CMOS MUX. The daughter-boards are connected to
the motherboard via an interposer, that allows for sam-
ples to be rapidly interchanged in between cool-downs21
(Fig. 4 (b)).
In our demonstration the heterostructure consists
of a InAlAs/InAs/InGaAs quantum well grown 10 nm
below the surface on a 2" (100) InP substrate (Fig. 4
6
(c-d)). An 8 nm layer of Al was deposited in-situ to
induce superconductivity in the quantum well via the
proximity effect. Hall bar devices were defined across a
quarter wafer of heterostructure, and the Al removed in
the active area both by standard wet etching techniques.
A global ALD Al2O3 gate dielectric was then deposited,
followed by a Ti/Au top gate defined by e-beam
lithography. Magnetoconductance measurements of the
Hall bar were performed simultaneously as a function
of top gate voltage in a perpendicular magnetic field
using standard lock-in techniques. Fig. 4 (f) shows the
extracted resistivity as a function of top gate voltage
for 9 samples, obtained across two cool-downs. No
degradation in device performance is seen compared to
devices measured without the Cryo-CMOS MUX in-line.
Using this technique, we can map out the mobility as a
function of position of the die on the growth wafer, as
indicated in Fig. 4 (g). We observe that dies coming from
the edge of the wafer suffer a degradation of mobility
by a factor of two (27 000 cm2/(V s)) compared to dies
near the center of the wafer (44 000 cm2/(V s)).The
magnetoconductance measurements also allow us to
study the additional inline resistance that emerges as a
function of magnetic field. As shown in Fig. 4 (e), we
observe an additional linear resistance of 6 Ω T−1 within
the magnetic field range of −2 T to 2 T studied in this
work.
Note: In the final stage of submitting this manuscript
a preprint describing similar work using commercial off-
the-shelf CMOS multiplexing circuits has appeared22.
ACKNOWLEDGMENTS
This research was supported by Microsoft Corporation
and the ARC Centre of Excellence for Engineered Quan-
tum Systems. We thank Y. Yang, X. Croot, and A. Moini
for technical assistance and useful discussions. We ac-
knowledge the facilities as well as the scientific and tech-
nical assistance of the Research & Prototype Foundry
Core Research Facility at the University of Sydney, part
of the Australian National Fabrication Facility (ANFF),
and the NSW node of ANFF at the University of New
South Wales.
∗ These authors contributed equally to this work
† [email protected]
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|
1905.07127 | 1 | 1905 | 2019-05-17T06:22:53 | A self-sensing microwire/epoxy composite optimized by dual interfaces and periodical structural integrity | [
"physics.app-ph"
] | Self-sensing composites performance largely relies on the sensing fillers property and interface. Our previous work demonstrates that the microwires can enable self-sensing composites but with limited damage detection capabilities. Here, we propose an optimization strategy capitalizing on dual interfaces formed between glass-coat and metallic core (inner interface) and epoxy matrix (outer interface), which can be decoupled to serve different purposes when experiencing stress; outer interfacial modification is successfully applied with inner interface condition preserved to maintain the crucial circular domain structure for better sensitivity. We found out that the damage detection capability is prescribed by periodical structural integrity parameterized by cracks number and location in the case of damaged wires; it can also be optimized by stress transfer efficiency with silane treated interface in the case of damaged matrix. The proposed self-sensing composites enabled by a properly conditioned dual-interfaces are promising for real-time monitoring in restricted and safety-critical environments. | physics.app-ph | physics | A self-sensing microwire/epoxy composite optimized by dual interfaces and periodical
structural integrity
Y. J. Zhao*, X. F. Zheng*, F. X. Qin†, D. Estevez, Y. Luo, H. Wang,
and H. X. Peng‡
Institute for Composites Science Innovation (InCSI), School of Materials Science and Engineering, Zhejiang
University, Zheda Road, Hangzhou, 310027, PR. China
Abstract
Self-sensing composites' performance largely relies on the sensing fillers' property and interface. Our
previous work demonstrates that the microwires can enable self-sensing composites but with limited
damage detection capabilities. Here, we propose an optimization strategy capitalizing on dual
interfaces formed between glass-coat and metallic core (inner interface) and epoxy matrix (outer
interface), which can be decoupled to serve different purposes when experiencing stress; outer
interfacial modification is successfully applied with inner interface condition preserved to maintain
the crucial circular domain structure for better sensitivity. We found out that the damage detection
capability is prescribed by periodical structural integrity parameterized by cracks number and
location in the case of damaged wires; it can also be optimized by stress transfer efficiency with silane
treated interface in the case of damaged matrix. The proposed self-sensing composites enabled by a
properly conditioned dual-interfaces are promising for real-time monitoring in restricted and safety-
critical environments.
Keywords: A. Self-sensing composite; A. Glass-coated ferromagnetic microwire; B. microwave
property; C. Structural health monitoring
* Equally contributing authors
† Corr author: [email protected]
‡ Corr author: [email protected]
1. Introduction
Composites reinforced by carbon fibers and glass fibers have been widely used in aerospace
industry because of their low density and superior mechanical performance over metallic materials[1].
Moreover, the proportion of fiber-reinforced composites in aircraft has exceeded 50%, which could
lead to catastrophic consequences if damages appear and extend in the composites, degrading their
structural integrity and worsening their mechanical performance. Thus, a life-safety effective and
economical way of real-time inspection is needed for fiber-reinforced composites, commonly referred
as structural health monitoring (SHM). Currently widely-used SHM technologies are mainly based on
embedded sensors like optical fibers, piezoelectric films, magnetostrictive materials and memory
alloys [2-5]. Due to extended functionalities enabled by these embedded sensors, their composite
materials have obtained myriad designations as 'self-sensing' and 'smart', which can be used
particularly in non-destructive monitoring of local stresses. However, such inclusions have many
setbacks in practical utilization, including poor mechanical properties of the composites caused by the
size mismatch between the sensors (usually no less than 100 microns) and carbon fibers or glass fibers
(several microns), complicated and pricy signal processing and conditioning, limited service
environments caused by the brittleness of optical fibers as well as easy polarization and easy electrical
breakdown of piezoelectric films. As such, alternative effective techniques are demanded both
economically and technologically, with the least harm to the integrity and mechanical performance of
the composites [6-8].
In recent years, much research effort has been dedicated to the investigation of engineered
composites containing ferromagnetic glass-coated microwires in terms of their tailorable size (2 m
~100 m), sensitivity to external stimuli such as, magnetic field, stress or temperature and microwave
tunability[9-11]. The magnetic field and stress-dependent high frequency impedance properties of such
wires make them promising candidates for SHM applications [12-14]. Two monitoring methods have
been developed based on such effects, "wired" and "wireless", in which the impedance of the
microwire is measured through electrical contacts and through the microwire scattering properties in
free space, respectively [15-17]. The latter method offers a more efficient, reliable and accurate
remote monitoring technique owing to the absence of cable connections and network analyzer
correction issues. However, a better understanding of the correlation between specific damage
attributes (size, distribution, etc.) and electromagnetic parameters required to assess the structural
integrity of the composite is still missing. The difficulties in mapping the damage through the
electromagnetic signature are largely related to heterogeneity of properties between the matrix and the
microwire, and improper stress transfer associated with microwire-matrix interfacial behavior. Thus,
a design strategy integrating the properties of microwire and composite mechanical behavior needs to
be adopted. In this work, to efficiently enhance the damage and local structural integrity sensing
capabilities of microwire composites, an approach based on dual interfacial optimization is proposed
to maintain, if not improve, the magnetic features of wires via the inner interface and better the outer
interface bonding. The damage was introduced in a controlled way and evaluated through remote
microwave interrogation, first on free-standing microwire arrays with preset cracks and then on epoxy
matrix composites incorporating silane-modified glass-coated microwire arrays. Thanks to the
existence of glass coat that served as a sensitivity supplier for free-standing microwire and a mediator
for matrix-wire interactions, the structural integrity sensitivity of the microwire composites increased
substantially while preserving both the wire magnetic properties responsible for sensing capabilities
and mechanical integrity of the composites.
2. Experimental details
2.1. Design of free-standing microwire arrays with preset cracks
To prepare the sample of free-standing microwire arrays for the rectangular waveguide WR90
(0.9 in× 0.4 in), a special kraft paper frame was designed in which a rectangular window was cut (22.86
mm×10.16 mm) at the center, matching the size of the waveguide frame, vertical grids were also drawn
to ensure the wires were properly placed. (错 误 ! 未找 到引用 源。 a). Five parallel continuous
Co68.7Fe4Si11B13Ni1Mo2.3 glass-coated microwires, whose inner and total diameters are 19.3 m and
23.2 m, respectively, were fixed along the lines on the paper with a 2 mm spacing among them. Then,
preset cracks were introduced by cutting the microwires along their length at a specific position to
simulate the damage locating right on the microwires. The microwires were labeled A to E from left
to right, respectively. The number following the capital letter represents the distance in mm between
the crack and the top end of the microwire inside the waveguide frame, e.g. A3 (crack in wire A, 3 mm
from the top), A3B3 (crack on wire A, 3 mm from the top and crack on wire B, 3 mm from the top)
(Fig. 1b). The whole series of crack locations on the microwire arrays is summarized in 错误!未找到
引用源。.
2.2 Preparation of surface-modified microwires and pull-out samples
The glass-coated amorphous wires were treated with silane coupling agent to study the interfacial
bonding with the epoxy matrix and therefore optimize the stress transfer in the composites. To prepare
the silane solution for the surface modification of the glass-coated microwire, KH550 silane was
diluted with ethanol to 2 wt.% and 5 wt.% (错误!未找到引用源。 and Fig. 1c). Then, the amorphous
microwires were immersed in the silane solution and sonicated for 20 minutes. To prepare the pull-out
samples for microwire/epoxy bonding strength analysis, a grid paper with a rectangular window (10
mm 10 mm) was made (错误!未找到引用源。d). A 10 mm long microwire was embedded into
commercial LT-5028 epoxy resin (100:30 epoxy/hardener) at one end and stuck by cyanoacrylate
adhesive to the paper at the other end, ensuring that the effective pull-out length of the microwire was
1 mm. After that, all the pull-out samples were cured at 50 oC for 4 h and 700oC for 6 h. Then, tabs
made of kraft paper were stuck to the both ends of the wire inside the grip section to guarantee a
uniform load distribution.
2.3 Preparation of smart self-sensing composites containing microwire arrays
To prepare the composites which can be drilled easily and accurately as well as locate the damage
near the microwire, commercial LT-5028 epoxy resin was selected as the matrix of the composites.
Four types of composite samples were prepared. In the reference sample (matrix), the epoxy resin was
poured into a designed cuboid mold to produce samples with dimensions of 22.86 mm (length) × 10.16
mm (width) × 2 mm (thickness). The rest of the samples were prepared in the same manner except that
five parallel microwires were buried along the width and at the center of thickness direction with a
wire spacing of 2 mm. As cast microwires, and wires modified by 2 wt.% and 5 wt.% silane solution,
were incorporated in the matrix, respectively. All the samples were then cured at 50 ℃ for 4 h and
70 ℃ for 6 h. After that, the drilled samples were prepared by an electric drill with 1 mm diameter bit.
Two drilled composites were studied. The distances between the center of the hole and the nearest
microwire were 2 mm and 1 mm respectively, as shown in Fig. 1e.
2.4 Characterization techniques
[Fig.1 here]
The morphology of the pull-out microwires was investigated by scanning electron microscopy
(SEM), Hitachi 3400, Japan. Pull-out tests for surface-modified microwires were performed with an
INSTRON tensometer 5943 at a travel rate of 1 mm/min at room temperature. The surface
characterization of the samples was performed by X-ray photoelectron spectroscopy (Kratos AXIS
Supra) and contact angle measurements (DataPhysics Instruments OCA 20). The scattering parameters
of all samples were measured by the Rohde&Schwarz ZNB 20 vector network analyzer (VNA) using
WR90 waveguide in TE 10 dominant mode frequency range [18, 19] from 8.5 GHz to 11 GHz. The
VNA was calibrated by the thru-reflect-line (TRL) [20] method and the measurements were performed
on transmission mode. The power reflection and absorption coefficients can be directly computed from
the scattering parameters as R = S112 and A = 1 − S112 − S212, respectively.
[table 1] and [table 2] here
3 Results and discussions
3.1 Microwave properties of the free-standing microwire arrays with preset cracks
To investigate the effects of damage which locates right on the microwires, various crack
distributions were introduced into the free-standing microwire arrays. Considering the symmetry of
the array consisting of five parallel microwires, here we only discuss the microwave performance of
the microwire arrays with one or two cracks to simulate the condition in which the microwire array
composite still remains partial structural integrity. The crack distribution dependence can be evaluated
both by using the absorption (Fig. 2a) and reflection (Fig. 2b) coefficients in all samples.
When only one crack was introduced into the array, the crack was preset either on microwire-A
or on microwire-C of the array (defined as the x coordinate, from left to right), which divided the
microwire to short parts with different lengths (defined as the y coordinate, from top to bottom). When
both the x and y coordinates of the crack are determined, the location of the crack can be easily traced.
Fig. 2a shows the absorption spectra of free-standing microwire arrays containing one crack as well as
the uncut microwire arrays. For the uncut sample, which microwire length is 10.16 mm, the
characteristic absorption peak should occur at around 9.3 GHz, corresponding to the Lorentz-type
dielectric resonance [21-23]. When one crack is introduced to the microwire, it was split to two parts,
and the longer part in the array system contributes to the dominant dielectric response due to a higher
induced dipole moment. Therefore, the effective length for the samples A3 and C3 can be estimated
as 7.16 mm while the length of A5 and C5 can be estimated as 5.16 mm. For all cut-samples, there are
dual absorption peaks, the peak occurring at around 9 GHz may be caused by the presence of the paper
frame which introduces a thin non-conductive gap between the two parts of the waveguide, regardless
of the microwire length. Meanwhile, as the effective length decreases, the absorption dispersion
becomes broader and the characteristic frequency of the second peak blueshifts to 10.1 GHz and 10.3
GHz for A3 and A5, 10 GHz and 10.3 GHz for C3 and C5, respectively, which corresponds to the
characteristic frequencies determined by the antenna resonances [23]
𝑓𝑟𝑒𝑠,𝑛 =
𝑐(2𝑛 − 1)
2𝑙√𝜀
where c represents the light speed, n natural number (for the lowest resonance n = 1), l microwire
length, and ε the relative permittivity of the matrix. It is obvious that for microwire arrays with one
crack, the characteristic frequency of absorption peak is determined by microwire length regardless of
which microwire the crack locates at. The mismatch characteristic frequencies of A3 and C3 may be
caused by the different tilted stages of the free ending in the microwire cuts.
Since the crack position along the wire can be deduced from the characteristic frequency of
second peak of the absorption spectra, it is equally important to assess the x coordinate of the crack. It
is found in the Fig. 2b that when only one crack locates on different microwires, the value of reflection
coefficient varies due to different crack distributions (different x coordinate) despite the same effective
microwire length (the same y coordinate). Compared to the uncut ferromagnetic microwire arrays,
which owns the largest reflection coefficient over the 8.5-11 GHz frequency range due to the better
periodicity of the intact microwires, the reflection value of array with a crack on microwire-A is lower
than that of array with a crack on microwire-C. This is because the crack on microwire-C causes a
larger spacing between microwire-B and microwire-D, making the original array into two smaller
identical arrays (AB and DE). In this condition, the microwave is originally reflected and interfered
by array-AB and array-DE, contributing to a larger reflection coefficient. On the contrary, despite a
broken microwire, the periodical arrangement of microwires in the array remains the same as the
previous one in A3 and A5, yielding a similar reflection.
[Fig. 2 here]
Similarities can be seen when two cracks locate on different microwires (Fig. 3). When two cracks
are located on microwire-A and microwire-B or microwire-B and microwire-D, the crack pattern is
defined as pattern-AB and pattern-BD, respectively. For arrays with two broken microwires, the
absorption peaks (Fig. 3a) appear at lower frequency as the effective length becomes larger, which is
consistent with the resonance frequency shift [23]. The absorption amplitudes of both patterns exhibit
similar values, which are higher than that of the uncut array. With reference to Fig.3a, as the crack
number grows, the absorption peak becomes less pronounced due to the degradation of the array
integrity.
Microwave reflection coefficient of the array with two cracks (Fig. 3b) mainly depends on the
relative distribution of the damage, causing different array patterns and therefore leading to different
reflection values. The reflection dispersion in descending order of magnitude, uncut array, A3B3,
B5D5 and A5B5, indicates that reflection coefficient is proportional to the integrity (which in context
refers to longer effective microwire length) and the periodicity (which refers to the array with stronger
interference of the electromagnetic wave) of the array.
[Fig. 3 here]
To summarize, for free-standing microwire arrays, by evaluating the absorption dispersion, the
number of the crack can be, to some degree, predicted. Then, the characteristic frequency of the
absorption peak indicates that the effective microwire length and crack pattern can be associated with
the reflection coefficient amplitude.
3.2 Investigation of interfacial bonding strength and microwave properties of the microwire-enabled
smart self-sensing composite
In practical applications, the self-sensing microwire is supposed to be embedded in matrix,
introducing the capacity of structure health monitoring without altering significantly the mechanical
properties of the composites. The interfacial surface becomes crucial, deciding the adhesion quality
between microwires and the matrix as well as the effectiveness of stress transfer. Negative
magnetostriction microwires may become sensitive to the tensile stress with or without the presence
of a weak DC bias magnetic field [24, 25]. Therefore, adequate microwire/matrix adhesion which
results in efficient stress transfer and optimal microwire compositions are necessary in order to exploit
the capability of microwire-polymer matrix for remote sensing of damage distribution. Here, we
investigated the interfacial bonding strength by pull-out test and microwave performance of the epoxy
composites incorporating microwire arrays modified by two silane coupling agent concentrations (2
wt.% and 5 wt.%).
3.2.1. Interfacial bonding strength of silane-modified microwires
Pull-out tests are introduced to assess the adhesion quality between the epoxy matrix and the
surface-modified glass-coated microwire. A pull-out test of a glass-coated microwire embedded into a
polymer matrix reveals two adhesion interfaces, i.e. a dual interface. The first one between the wire
metal core and its glass coating, and the second one between the glass coating and the outer epoxy
layer. According to Fig. 4, concentration of the silane has pronounced influence on pull-out results.
Since both glass coating and metal core are brittle, the interface condition between glass coating/epoxy
can be evaluated by plastic deformation. The load-displacement curve of the as-cast microwire appears
generally linear with fluffy steps before fracture (Fig. 4), indicating that only a small part of glass
coating broke during the pull-out process while the bonding between the glass coating and the metal
core dominated. For microwires treated by 2 wt.% silane, the curve remains a linear trend but with a
sudden drop of the load at around 0.17 mm of displacement, which can be attributed to the fracture of
glass coating and sliding of the glass coating/metal core interface. When the silane concentration rises
into 5 wt.%, the curve shows a linear trend associated to elastic deformation with a small shoulder just
before fracture (zoomed view, inset of Fig. 4) due to the ductile fracture of the glass coating/epoxy
interface. As the load exceeded the bonding strength of the glass coating/metal core interface, the metal
core was pulled out completely showing the most enhanced glass coating/epoxy interfacial adhesion
of all the samples which will ultimately provide the most effective epoxy/glass- coated microwire
stress transfer. Among all the microwires, 2 wt.% silane modified sample bears the largest load, with
the maximum at 1.2 N. In this case, the bonding strength of glass coating/epoxy interface overcomes
the bonding strength of the glass coating/metal core interface, resulting in the largest pull-out strength
compared to the amorphous wire and 5wt.% silane-modified sample, in which glass coating/metal core
interface and metal core, respectively contribute to the pull-out loading capacity.
[Fig. 4 here]
The scanning electronic microscope (SEM) images (Fig. 5) of the pulled-out sample confirm the
explanation given above to the load-displacement curves. Fig. 5a shows that the as-cast microwire has
been totally pulled out, wrapped with both glass-coatings and rough epoxy lumps, which indicates
poor interfacial adhesion and inefficient stress transfer. When the silane concentration is 2 wt.%
(Fig.5b), the resultant smaller diameter implies that the pulled-out fiber is mostly metal core with some
tiny cracks on the surface. When the bonding strength of both interfaces (epoxy/glass coating and glass
coating/metal core) is comparable, the glass coating breached and slid between the epoxy layer and
metal core, resulting in crack propagation along the effective pulled part. Most of the glass coating
adhered to the epoxy, while some glass shards remained on the pulled-out metal core surface. As the
concentration increases to 5 wt.% (Fig. 5c), the smaller diameter and smoother surface indicated that
the pulled-out fiber was metal core without glass coating or epoxy.
[Fig. 5 here]
To further understand the mechanism of bond formation of silane to the glass-coated wire and thus
its relationship to interfacial bonding strength, surface characterization by X-ray photoelectron
spectroscopy (XPS) and contact angle (CA) were performed. In order to avoid distortion from the
uneven surface of the microwire and thus obtain more accurate results, we replicated the same silane
treatment conditions applied on the glass-coated microwire to a flat Pyrex glass substrate. As expected,
the N1s XPS spectrum of the glass substrate without silane surface modification (Fig. 6a) does not
show any significant signal in the spectral region. Primary and secondary amines, -- NH2 and -- NH, are
detected for the 2 wt.% silane modified glass substrate (Fig. 6b) at binding energies of 399.39 eV and
400.56 eV, respectively, indicating the presence of the silane coupling agent. The two reactive
hydrogen groups in the primary amine react rapidly with the two epoxy functional groups in the epoxy
resin by opening the epoxy ring and forming the secondary amine structure (inset diagram of Fig. 6b)
[26], therefore improving the glass/polymer interface bonding. Further increase in silane concentration
to 5 wt.% leads to the appearance of the protonated amine peak -- N+ (402.1 eV, Fig. 6c) which results
from the reaction of the NH2 -- (or -- NH -- ) groups in silane with the OH groups on the glass surface [21].
Thus, the protonated amino groups would have a preference towards the glass surface while the free
amino groups protrude towards the epoxy side (inset diagram of Fig. 6c). Such chemical linkage at the
interface between the glass and the epoxy accounts for the optimized glass coating/epoxy interfacial
bonding in 5 wt.% silane modified sample.
[Fig. 6 here]
The surface chemistry of the silane modified glass also influences significantly the glass
wettability (Fig. 6, d-f). For the as-prepared glass without silane, the contact angle between the epoxy
and the glass surface is 45.6 o. By modifying the surface with 2 wt.% silane and 5 wt.% silane, the
contact angle decreases to 33.7 o and 29.2 o, respectively. The lowest contact angle for 5 wt.% silane
modified sample further confirms the strongest interfacial adhesion between glass-coated microwire
and epoxy resin obtained in this sample.
3.2.3. Microwave properties of preset-damaged composites incorporating silane modified microwires
arrays
To explore the relationship between stress transfer effectiveness enabled by the silane surface
modification and the damage-sensing capabilities of the microwire composites, we investigated the
microwave properties of the composites incorporating the silane modified microwires under preset
damage. The damage was introduced by drilling a 1 mm diameter hole through the epoxy matrix along
the thickness direction. The 1 mm-drilled hole was located at two different positions in the matrix: 2
mm (labeled as drilled-2mm) and 1 mm (labeled as drilled-1mm) away from the midpoint of microwire
A (Fig. 1e). According to Fig. 7 a-d, the absorption and transmission spectra of the epoxy matrix
exhibit basically the same type of dispersion with and without damage. This response is due to the
almost transparency of the epoxy in the X-band and thus a small number of tiny holes would barely
affect the effective permittivity of the matrix. Consequently, the embedded microwires will be directly
responsible for the changes in the scattering spectra of the composites.
[Fig. 7 here]
For the composites with as-cast microwires, the transmission spectra show similar dispersion
regardless of the presence and location of the damage (undrilled, drilled-2mm, drilled-1mm). However,
the damage location can influence the absorption of the microwave in the composites. Compared to
uncut free-standing arrays (absorption peak at 9.3 GHz, Fig. 3a), the absorption peak of undrilled as-
cast wire composite samples blue-shifts to 10.4 GHz due to the compressive residual stresses generated
by the different thermal expansion of microwire and epoxy during the curing process, inducing a non-
axial magnetic anisotropy in the microwires. Moreover, the absorption dispersion of both the drilled-
2 mm sample and the drilled-1 mm samples becomes broader and has smaller amplitude with respect
to the undrilled as-cast wire composite samples. This is because during the development of the damage
after drilling, the weak interfacial adhesion between glass-coated wire and the epoxy is destroyed,
resulting in an inefficient epoxy-microwire stress transfer (Fig. 7e).
For the undrilled and drilled composites with 2 wt.% silane-modified microwires, the
transmission spectra (Fig. 7a and b) show a similar trend with those incorporating as-cast microwires.
However, the absorption curve illustrates a totally different trend (Fig. 7c and d). As previously
discussed, by applying 2 wt.% silane, the glass-coated microwires are partially connected to the epoxy
through free amino groups and thus compressive stresses are applied on the microwires by the epoxy
resin inducing a strong uniaxial magnetic anisotropy. Such phenomena result in smaller absorption
amplitude compared to the as-cast microwire composites. Additionally, when comparing the
absorption response at higher frequency, no significant difference is found between the drilled-2mm 2
wt.% sample and the undrilled 2 wt.% sample. However, the absorption of the drilled-1mm sample is
slightly higher than that of undrilled sample (Fig. 7d). In this case, the closer damage to microwires
creates a significant stress concentration that leads to tiny cracks in the microwire and thus scattering
of the microwave by the generated dipoles over the cracked surface.
For the composites incorporating 5 wt.% silane modified microwires, a large change in
transmission is observed only for the drilled-1mm sample (Fig. 7b) while a change in absorption is
evidenced for different damage locations (Fig. 7c and d). Thus the composites containing the 5 wt.%
silane modified microwires show a great potential for damage monitoring enabled by a more efficient
stress transfer across matrix-wire interface (Fig. 7e).
To better visualize the effect of silane treatment and damage location in the microwave properties
of the microwire composites we calculated the rate of transmission change as shown in Fig. 7f and g.
The transmission change for the epoxy matrix and all the drilled-2mm composite samples is almost
the same with a change ratio less than 20%. This is mainly attributed to the metallic impurities
introduced during drilling and/or measurement inaccuracy. Therefore, the sensing and damage
detection capability through the microwave response of microwire composites is rather poor when the
damage locates far from the wire inclusion. For the drilled-1mm samples, although the transmission
change of as-cast microwire and 2 wt% silane modified microwires is not substantial, it dramatically
changes up to 100% for 5wt% silane-modified microwires in the frequency range of 10-12 GHz. In
this case, the microwave response of the composites overcomes the measurement uncertainties,
providing reliable signals for damage detection. From Fig. 7g it is concluded that after being modified
by 5wt% silane, the embedded microwire is able to sense the damage in close proximity to it, in
contrast to the results discussed in Section 3.1 in which the microwires can only respond to damage
when it locates right on them. Therefore, damage detection sensitivity of the microwire composites
have increased thanks to the optimized interfacial conditions in the composite system. In fact, the 5%
silane-modified glass surface serves as mediator in the stress transfer from the matrix to the microwire
while preserving both the wire circumferential domain structure responsible for the sensing capabilities,
and the structural integrity of the composite. Without such mediator the wire inclusion would have
considerable different properties from the free-standing wire due to the wire/epoxy poor adhesion
quality. In such situation, our basic understanding of the wire would be still valid in composite context
which is highly desirable to predict composite properties. Overall the presence and optimization of the
dual interface: epoxy/glass coating and glass coating/wire allowed us to achieve maximum damage
detection sensitivity evaluated through microwave scattering. Additionally, it should be noted that the
non-destructive monitoring method based on the microwave properties of glass-coated ferromagnetic
microwires is limited by the microwire arrangement (wire amount and spacing) and damage location.
To further refine the damage detection without adding more microwires to the array which could be
unfavorable to structural integrity, we could modify the wire surface with e.g suitable nanoparticles or
coatings capable of responding to external stimuli.
4 Conclusions
We have demonstrated the potential of developing a smart self-sensing composite enabled by the
presence and optimization of dual interfaces in periodically arranged Co-based glass-coated
microwire/epoxy matrix composites. In the first case where the damage was located directly on the
wires, the microwave property was prescribed by the structural integrity expressed by the number of
cracks, crack location and periodicity of the array. When the damage was introduced in the epoxy
matrix, the microwire array modified by 5 wt.% silane could efficiently detect the local damage when
it was located 1mm far from the nearest microwire in the array. Such enhanced damage detection
capability was triggered in a favorable dual-interface context, which the glass cover served as a
mediator between epoxy and wire core allowing the most efficient stress transfer and preserving both
the wire superior magnetic properties and composite integrity. Our approach demonstrates the potential
of regulating microwire composites sensitivity to external stimuli through surface modification which
could fit specific requirements of structural health monitoring systems. It also opens up a new realm
to achieve multifunctional composites with indiscriminate functionalities, i.e., developing composite
fillers with dual or multiple interfaces to regulate the coupling and de-coupling effects as desired.
Acknowledgements
FXQ would like to thank the financial support of NSFC No. 51671171 and No. 5171101468; Basic
Grants for Central Universities No. 2018QNA4009 and National Youth Thousand Talent Program' of
China. All authors are grateful to Dr. Dmitriy Makhnovskiy for insightful discussions of experimental
results.
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ferromagnetic microwires and their multifunctional composites. J Appl Phys 2011;109(7):07A310.
[25] Makhnovskiy DP, Zamorovskii V, Summerscales J. Embedded ferromagnetic microwires for
monitoring tensile stress in polymeric materials. Composites Part A 2014;61:216-23.
[26] Licari JJ, Swanson DW. Adhesives technology for electronic applications: materials, processing,
reliability: William Andrew; 2011.
Figure Captions:
Fig. 1. (a) The schematic of paper frame used to place the free-standing wires inside the rectangular
waveguide. (b) The pre-set cracks setup for the free-standing microwire array. The capital letter
represents the microwire with crack on it. The number following the letter represents the distance (mm)
between the microwire top and the crack. (c) Surface modification of microwire by using KH550 silane.
(d) The microwire is embedded in the epoxy, with 1 mm effective pull-out length. (e) Holes introduced
into the matrix to imitate the situation in which damage locates in the composite matrix near the
microwire.
Fig. 2. (a)The absorption spectra and (b) the reflection spectra of free-standing microwire
Fig, 3. (a)The absorption spectra and (b) the reflection spectra of free-standing microwire arrays with
two crack.
Fig. 4. Pull-out result for surface-modified microwires embedded by epoxy.
Fig. 5. Diagrams and Scanning electron microscopy (SEM) images for pulled-out microwires (a) As-
cast and modified by (b) 2 wt.% and (c) 5 wt.% silane.
Fig. 6. XPS spectrum for (a) as-prepared glass and glass modified by (b) 2 wt.% and (c) 5 wt.% KH550
silane. Contact angle of (d) as-prepared glass and glass modified by (e) 2 wt.% and (f) 5 wt.% silane
to epoxy.
Fig. 7. Transmission for (a) drilled-2 mm composites samples (b) drilled-1 mm composites samples.
Absorption for (c) drilled-2 mm composites samples and (d) drilled-1 mm composites samples. (e)
Stress transfer diagrams for as cast, 2 wt% KH550 and 5 wt% KH550 samples. Rate of transmission
change for (f) drilled-2 mm composites samples and (g) drilled-1 mm composites samples
Fig. 1
(a)
(b)
Fig. 2
(a)
(b)
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Table 1 Types of cracks preset on the microwire arrays.
Number of cracks
1
2
Type
A3; C3; A5; C5
A3B3; A5B5; B3D3; B5D5
Table 2 The concentration of silane solution is 2 wt.% and 5 wt.%, respectively. The microwires are
immersed in silane solution in an ultrasonic bath for 20 minutes.
Mass Fraction
Ethanol (g)
KH550 (g)
2 wt.%
5 wt.%
49.0
47.5
1.0
2.5
|
1905.11289 | 3 | 1905 | 2019-12-19T23:08:30 | Microstructural Inelastic Fingerprints And Data-Rich Predictions of Plasticity and Damage in Solids | [
"physics.app-ph",
"physics.comp-ph"
] | Inelastic mechanical responses in solids, such as plasticity, damage and crack initiation, are typically modeled in constitutive ways that display microstructural and loading dependence. Nevertheless, {linear} elasticity at infinitesimal deformations is used for microstructural properties. We demonstrate a framework that builds on sequences of microstructural images to develop fingerprints of inelastic tendencies, and then use them for data-rich predictions of mechanical responses up to failure. In analogy to common fingerprints, we show that these two-dimensional instability-precursor signatures may be used to reconstruct the full mechanical response of unknown sample microstructures; this feat is achieved by reconstructing appropriate average behaviors with the assistance of a deep convolutional neural network that is fine-tuned for image recognition. We demonstrate basic aspects of microstructural fingerprinting in a toy model of dislocation plasticity and then, we illustrate the method's scalability and robustness in phase field simulations of model binary alloys under mode-I fracture loading. | physics.app-ph | physics |
Microstructural Inelastic Fingerprints And Data-Rich Predictions of Plasticity and
Damage in Solids
Stefanos Papanikolaou1, 2
1Department of Mechanical and Aerospace Engineering,
West Virginia University, Morgantown, WV26506, United States.
2Department of Physics, West Virginia University, Morgantown, WV26506, United States.
(Dated: December 23, 2019)
Inelastic mechanical responses in solids, such as plasticity, damage and crack initiation, are typ-
ically modeled in constitutive ways that display microstructural and loading dependence. Never-
theless, linear elasticity at infinitesimal deformations is used for microstructural properties. We
demonstrate a framework that builds on sequences of microstructural images to develop fingerprints
of inelastic tendencies, and then use them for data-rich predictions of mechanical responses up to
failure. In analogy to common fingerprints, we show that these two-dimensional instability-precursor
signatures may be used to reconstruct the full mechanical response of unknown sample microstruc-
tures; this feat is achieved by reconstructing appropriate average behaviors with the assistance of
a deep convolutional neural network that is fine-tuned for image recognition. We demonstrate ba-
sic aspects of microstructural fingerprinting in a toy model of dislocation plasticity and then, we
illustrate the method's scalability and robustness in phase field simulations of model binary alloys
under mode-I fracture loading.
A.
Introduction
A critical bottleneck in the systematic material dis-
covery, optimization and deployment is the lack of con-
sistent and robust microstructure-property relationships
that hold across environmental conditions and material
classes. A major reason for this deficiency lies in the fact
that the inelastic mechanical response of solids does not
always originate in visible defects of the microstructure,
but requires additional dynamical insights, not always
accessible or/and comprehensible [1].
Consequently, available modeling approaches for me-
chanical applications, such as discrete or continuum mod-
els of molecular or continuum microstructural dynam-
ics [1 -- 3] require robust and multi-scale physical under-
standing and associated constitutive laws, with applica-
bility in technology-relevant extreme conditions, such as
high temperatures, pressures and strain-rates.
In con-
trast, in a very wide range of mechanical applications
in solids at infinitesimal deformations (ie. less than 2%
strain), elastic moduli are found to be consistent and ro-
bust, defining critical aspects of material behavior [4, 5].
Moreover, the so-called deformation superposition prin-
ciple [6], stating that elastic deformations may be super-
posed to deformations of other origin (plastic, damage),
has led to the development of consistent defect theories
and methods (eg. dislocation mechanics) [1, 7].
In this paper, we propose that small-deformation elas-
tic strain image sequences (up to 2% strain), readily pro-
duced experimentally [8], may be used as input towards
calculating "microstructural fingerprints in the form of
dynamical modes of inelasticity, which we label as Elas-
tic Instability Modes (EIM). EIMs are produced by an-
alyzing surface strain image sequences on a loaded sam-
ple, and consist of physically predominant perturbations
to the elastic mechanical response. EIMs may be con-
sidered as a dimensional hyper-reduction of the surface
strain image sequence towards a characteristic image that
captures the surface strain evolution under loading. We
develop the theory for the calculation of EIMs from image
sequences, and we demonstrate it for a toy model of dis-
location plasticity, as well as a realistic phase-field model
of damage and fracture. Finally, we demonstrate that the
combination of these microstructural fingerprints with
deep convolutional neural networks (that can be used to
classify and distinguish EIMs) can lead to detailed me-
chanical response predictions for unknown microstruc-
tures and samples.
In this way, we display a robust
protocol for the characterization and understanding of
unknown microstructures, using only inexpensive, sur-
face data at small deformations. The overall approach
is labeled as "Stability of Elasticity Analysis" (SEA)
(see Fig.1) and may complement available multiscale mi-
crostructural modeling approaches [1].
The role of SEA is two-fold: First, to characterize in
a concrete way the progression of local mechanical in-
stabilities in a material by the understanding of EIMs
in experiments and modeling. Second, to store EIMs
as classification tools in a data library, labeled as libΨ,
together with any tested mechanical responses of inter-
est (eg. uniaxial loading data at 30% strain), and then
use them as microstructural "fingerprints" for producing
mechanical predictions by reconstructing them through
deep convolutional neural networks (dCNN) [9]. The use
of dCNNs is not SEA's requirement, but may be ideal for
physically permissible input data superpositions.
The usefulness of SEA lies in the development of ma-
terial design strategies [5]. In the large multidimensional
parameter space of possible compositions and loading
conditions, a natural bottleneck has been the consistent
prediction of mechanical behaviors of new compounds
by testing single-dimensional parameter lines. A multi-
tude of data science and machine learning [10 -- 16] ap-
FIG. 1. Process diagram of main steps towards equation-free prediction for plasticity and damage. The field φ
typically is a strain field, invariant under frame rotations, that can be accurately measured through image correlation techniques.
The applied strain corresponds to the externally-controlled loading steps.
proaches have been recently proposed for materials and
mechanics [17].
In particular, image recognition meth-
ods have been efficiently used for the identification of
"flaws" in materials and structures [18 -- 22], and work
remarkably well when the flaw's mechanical effects are
well understood [23 -- 25].
In this context, SEA aims to
complement these efforts by adding additional physical
insights and understanding into promoting studies and
predictions with direct experimental connections.
be unstable to necking, buckling, plasticity, crack initia-
tion, damage [6], and while these instabilities do not need
to be elastic in origin, they always do have an elastic foot-
print which may be identifiable at small loads. It is useful
to consider these instabilities of elasticity as spatially de-
pendent bifurcations [32 -- 34] that could be captured by
identifying the system's predominant LEs.
The physical key to the dimensional hyper-reduction
method presented in this work is the understanding that
in many practical situations, solids can be considered
as initially stable elastic media that are then, mechan-
ically loaded.
If the loading scale is perceived as time
(ie. assuming that viscous solid effects are negligible [26]),
then this problem can be phrased in the context of non-
linear dynamical systems [27]: A loaded solid can be
thought of near a stable fixed point, that of elasticity. In
general, an N -dimensional non-linear dynamical system
consists of a list of variables xi(t) i = 1, 2,··· , N , their
dynamics xi = fi(x), and their initial conditions xi(0) =
x0 = 0. In such systems, the characterization of a fixed
point (ie. fi(x0) = 0) is controlled by the growth rates of
generic perturbations which are given by the spectrum of
Lyapunov exponents (LE) [28 -- 31] {λ1, λ2, . . . , λn} . LEs
are the real parts of the eigenvalues of the N×N Jacobian
matrix J ≡ Jij(t) = dfi(x)
, which provides the fixed-
point dynamical evolution X = JX where X = {xi}.
Away from the stable elasticity fixed point, a solid may
(cid:12)(cid:12)(cid:12)x(t)
dxj
In practical situations, LEs' calculation is numerical,
with various available approaches [35 -- 43]. However, it
has been difficult to achieve significant accuracy with
limited experimental data.
In this work, we propose a
method that is efficient and focuses on the predominant
LEs of this loading evolution. In what follows, we present
the general framework of SEA in Section B, and then we
demonstrate how it works in an exactly solvable toy ex-
ample of edge dislocation gliding and nucleation in Sec-
tion C. Then, in Section D, we explore its applicability
in a model binary alloy that is simulated using phase-
field modeling for elasticity, plasticity and damage in a
quite realistic scenario. Finally, in Section E, we demon-
strate how to use dCNNs for mechanical predictions of
fracture, based on the classification and understanding
of microstructural fingerprint EIMs. We conclude with a
discussion of future plans and modeling/experimentation
applications in Section F.
2
B. General framework of microstructural
fingerprinting based on inelastic signatures
The core principle behind this work lies in the ability
to characterize defected microstructures in terms of the
elastic fields generated when small, consecutive loads are
applied on them. This principle has been traditionally
used towards qualitative insights and understanding of
mechanical failure in materials. Possible examples could
be the insightful calculation of size effects in notched and
disordered specimens [44] [45] or the elastic fields around
dislocations [46] that may influence various mechanical
properties [47], especially at small scales [48].
Here, without loss of generality, we consider a scalar
field φ(r) at applied strain (t), that will represent an ob-
servable field of interest on N 2 possible surface locations
(φ
j), assumed to have a spatial resolution down to a char-
acteristic scale that defines a square N ×N grid [49], con-
trolled either by practical means (eg. image/camera res-
olution) or theoretical ones (eg. interatomic distances).
The field φ may either be a direct elastic field, such as
elastic strain or stress, or a field that is strongly corre-
lated to elastic fields, such as the plastic distortion or
damage [50]. In this paper, we will be focusing on φ be-
ing either the first strain invariant I = εxx + εyy + εzz
or the damage field d, which is defined through the par-
1 − Cijkl/C 0
ent material's elasticity properties d =
ijkl
with C 0 corresponding to the undamaged elastic coeffi-
cients [51].
(cid:113)
Assuming the loading of a sample location through an
imposed strain profile (t), then φ's evolution infinitesi-
mally away from the initially elastic fixed point ought to
resemble the equation:
d Φ
dt
= C
(1)
where Φ = { φ
j}, and C represents a function of the
elastic coefficients. As loading progresses, it is natural
to assume a generic leading-order perturbation J Φ to
the right side of Eq. 1, with J a N 2 × N 2 matrix.
If
one also proceeds with subtracting the mean response
φ ≡ φ − Ct [52], then one has the normal form:
dΦ
dt
= J Φ ,
(2)
where J is typically an unknown matrix. J is a matrix
that controls the most singular LEs. Analogous consid-
erations may be made for other observables such as dam-
age, stress or strain fields.
The pursuit in understanding instabilities of elasticity
requires the precise identification of J (see also Fig. 1).
J is understood for exactly solvable cases, such as a dis-
location pile-up at a precipitate under shear, an ellip-
tical notch under lateral load, or an Eshelby inclusion
in an elastic matrix [6]: It can be directly shown that
J captures the long-range stress changes during sub-
3
tle movements of inelastic defects (dislocations/micro-
cracks/damage/inclusions). [2, 6]. Here, we develop an
automatic framework (SEA) that calculates instability
growth exponents and eigenmodes Ψ of Eq. 2. SEA iden-
tifies elastic instability modes (EIM) Ψ through spatially
resolved in-situ image sequences, which solve the eigen-
problem of Eq. 2 in a least-squares sense. The set of
modes Ψ of a sample may be considered as its microstruc-
tural fingerprints for mechanical behavior.
The numerical estimation of modes that solve Eq. 2
proceeds by identifying a sequence of images at T con-
secutive equidistant strains 0, 1, 2,··· , n ··· t, with
∆ ≡ 2 − 1. The testing strain t is assumed to be less
than 2% and defines the maximum deformation imposed
on a sample for SEA testing and identification purposes.
In the case of equidistant strains in the sequence, Eq. 2
may be rewritten in its discrete form:
Φn+1 = J Φn
(3)
with J ≡ J ∆ + I. Then, the predominant EIMs may
be identified by solving Eq. 3 for J by using the Arnoldi
algorithm [53]. Field φ [T ×N 2]-dimensional matrices are
defined, where rows define time/strain evolution while
columns define spatial locations:
j ··· φn
X = {φ0
··· φt−1
j , φ1
(4)
j
j
}
and
Y = {φ1
j , φ2
j ··· φn+1
j
··· φt
j }.
(5)
Then, the optimal solution for J is [27, 53 -- 55]
JN = YX†
(6)
where X† is the Moore-Penrose pseudo-inverse of X.
The numerically identified operator JN is the least-
squares/minimum-norm solution to the potentially over
or under-constrained problem J X = Y. That is, the
choice JN minimizes the Frobenius norm JN X − Y.
The eigenvectors and eigenvalues of JN can be calculated
exactly through an exact diagonalization [56]. Neverthe-
less, given the possibility of memory issues, one would be
primarily interested only on the most predominant eigen-
values and eigenmodes that correspond to the predomi-
nant perturbations to elasticity. The most predominant
eigenvalues and eigenmodes may be estimated by taking
the reduced Singular Value Decomposition (SVD) of X:
X = UΣV∗
(7)
where U ∈ CN 2×r, Σ ∈ Cr×r and V ∈ CT×r with r the
rank of X. In this work, we maintain r = 8. Clearly, the
singular value amplitudes ςj of the SVD modes capture
the variability in the microstructural evolution, as it is
seen through the spatial correlations of the Φ-field. The
eigen-decomposition of U∗YVΣ−1 can be then exactly
calculated, giving a set of eigenvectors w and eigenvalues
µ. Then, the operator J has eigenvalues µ and eigenvec-
r(cid:88)
tors
Ψ =
YVΣ−1w
1
λ
(8)
labeled as EIMs. This low-rank approximation of eigen-
values and eigenvectors of J allows for the approximate
reconstruction of the time evolution as:
φ() =
bk(0)ψk()eln µk/∆
(9)
k=1
with the coefficients bk(0) characterize the initial condi-
tion φ0 and b = Ψ†φ0. The quantity λk ≡ ln µk/∆ has
a real part, which if larger than 0 signifies a finite insta-
bility growth rate, dominated by mode k. An imaginary
part signifies additional oscillatory response.
The resolution scale of the φ-field shall be at the char-
acteristic scale of the elastic fluctuations (eg. at the scale
of a Representative Volume Element (RVE)) [1] and thus,
the dimensions of J are necessarily finite.
The analogy of eigenmodes Ψ to fingerprints is insight-
ful: The sought experimentally relevant strain deforma-
tion data sets [8]are typically two-dimensional (2D) and
only capture small surface strains. However, in the same
way that 3D humans are being recognized by 2D finger-
prints, it is quite plausible that material microstructures
may be recognizable by the load-dependent elastic defect
signatures in the small strain regime.
C. Microstructural fingerprints for a toy model of
dislocation dynamics
In order to demonstrate how microstructural finger-
printing applies in crystal plasticity, we consider a toy
example of edge dislocation dynamics. We consider the
case of a single slip system, with cores along the z-axis
and the Burgers' vector in the positive x-direction, (cid:126)b = bx
with dislocations solely gliding under shear stress along
the x-direction [57 -- 60]. Here, we consider a periodic sys-
tem of size N ×N (N = 40b), with only two dislocations,
which may either be i) pinned at obstacles, i) glide in the
same direction or ii) nucleate as a positive-negative dis-
location pair at a location r0 = (x0, y0). This model is
exactly solvable, and provides a way to understand the
basic character of the calculations we are considering.
Dislocation motion is assumed to be overdamped, so
equation of motion of discrete dislocations can be written
as:
τext +
N(cid:88)
j=1,j(cid:54)=i
xi(t) = si
;
FIG. 2. Microstructural Fingerprinting in a Toy Model
of Plasticity: (a) Strain ε(t) follows a non-linear evolution,
controlled by the increase of stress. Two same-sign edge dislo-
cations are pinned at respective obstacles in A, are depinned
in B, and glide along their slip-plane along the x-direction in
C. Insets A, B, C display the corresponding strain invariant
images discussed in text. Hyper-reduction leads to well de-
fined modes, the most dominant of which is shown in (c). This
solution is analytically confirmed. Analogously, (b, d, f) cor-
respond to the case of dislocation pair nucleation at a specific
location (opposite-signed dislocations). Notice the character-
istic difference between the calculated modes. The differences
are explained in the text.
both in the x and y directions:
∞(cid:88)
i,j=−∞
τind(x, y) =
where
ind(x − iN, y − jN ),
τ ibc
(11)
τ ibc
ind(x, y) =
x(x2 − y2)
(x2 + y2)2
(12)
sjτind(ri − rj)
yi(t) = 0,
is the solution for infinite boundary conditions [46]. The
equation of motion (10) is solved by a 4.5th order Runge-
Kutta scheme.
(10)
where τext is the externally applied shear stress and τind
denotes the stress field of an individual positive (si = +1)
dislocation. The latter is calculated for periodic systems
by considering an infinite amount of image dislocations
Analytically, for an independent dislocation at (0,0),
and given D = Gb/(2π(1 − ν)) one has, σxx =
−Dy 3x2+y2
(x2+y2)2 , σzz = ν · (σxx + σyy),
(x2+y2)2 , σyy = Dy x2−y2
4
(a)(b)εtABCABCOεtABCABCO(d)(e)(f)(c) FIG. 3. Model binary alloy demonstration & modeling: Two-phase material of FCC crystalline structure, that can
deform plastically and has brittle fracture characteristics. (a) Texture of notched specimen with 30 inclusions of length 240µ m.
Arrows point the loading direction. (b) Phase field of damage (cid:104)d(cid:105) across the sample at a late deformation stage, (c) Uniaxial
stress snapshot along the loading axis at an early deformation stage, (d) Uniaxial strain along the loading z axis at a late
deformation stage (same as in (b)), (e) Evolution of stress and damage field vs. imposed loading strain. Thick lines indicate
the testing strain (see text).
and the dislocation pressure is:
p =
σxx + σyy + σzz
3
=
2(1 + ν)D
y
x2 + y2 =
3
(1 + ν)Gb
3π(1 − ν)
=
y
x2 + y2
(13)
just, I(r) = (cid:80)
that for isotropic solids we have σzz = 2Gzz + λ(cid:80)
If one tracks the strain components of this 2D system,
then the first strain invariant of an edge dislocation is
i ii(r). Since zz = 0 in a 2D system
dominated by edge dislocations, then we can use the fact
i ii
(with λ = 2
1−2ν G), thus giving:
I +
(r) =
σzz = −b
1
λ
(1 − 2ν)ν
2π(1 − ν)
y
x2 + y2
(14)
where + denotes the result for a positive dislocation ((cid:126)b =
bx).
For a dislocation pinned at an obstacle that starts glid-
ing after the external stress increases beyond a threshold
σthr in a non-linear, but differentiable manner (so that
(t) = f (t)), it is straightforward to estimate the evolu-
tion of the strain invariant I±
(r):
2f(cid:48)(t)(x − x0 + f (t))
dI±
(r)
dt
= ∓
(y − y0)2 + (x − x0 + f (t))2 I(r) (15)
Given the simplicity of the problem, the J operator is di-
agonal, thus it is straightforward to infer its properties.
It is worth noting that it is non-zero only when disloca-
tions are in motion, and it has a characteristic left-right
asymmetry, with respect to the original pinning point lo-
cation. For a negative dislocation [46], from Eq. 15, J is
exactly negative, leading to a very drastic difference in
the fingerprint of a nucleating dislocation pair compared
to a pair of gliding dislocations (cf. Fig. 2).
SEA manifests its usefulness in identifying distinguish-
able signatures of characteristic events (dislocation glide
5
vs. pair nucleation) through a parameter-free, experi-
mentally tractable and automatic manner.
D. Microstructural Fingerprints and Data-Rich
Predictions: Plasticity and Damage in a Model
Binary Alloy
While toy examples are insightful in showing the origin
and potential usefulness of SEA, it is natural to inquire
its applicability in realistic situations where plasticity,
damage, as well as fracture are plausible instabilities. In
such complex cases, there are strong spatial and tempo-
ral correlations that make analytical calculations of the
J matrix impossible. However, SEA may efficiently esti-
mate the predominant EIMs in numerical fashion.
To explicitly illustrate the method, we consider an ex-
emplary test case [6, 44, 51, 61] by laterally loading a
notched thin-film specimen in contact with air in the
horizontal direction, with sample dimensions: 0.25cm2
and a resolution at 40µm in the loading direction, 20µm
the horizontal, and 40µm in thickness -- RVE's size
(20×40×40µm3)).The notch facilitates crack growth and
it has width 0.15mm and height 0.3mm, with an ellipti-
cal shape. The crystalline structure of the matrix mate-
rial is FCC, with elastic coefficients of the material are
Czz = 150GPa, Czy = 120GPa, Cxx = 80GPa (with
x being the film thickness direction). The importance
of this example is that its dimensions can be efficiently
achieved by current experimentation procedures [8]. The
sample also contains needle-like inclusions with width
80µm and fixed length that could be either 80, 160, 240,
320 µm with FCC crystalline structure but distinct ma-
terial properties (C incl
zz = 180GPa) from the matrix and
there is also imposed microscale damage at the inclusion
tips. The inclusions are placed randomly in the sample
and their number can be either 0, 2, 5, 10, 15, 20, 25, 30,
leading to total 32 possible microstructures (a texture is
shown in Fig. 3(a)). Cases of different microstructures
FIG. 4. Demonstration of Single-Sample Mode (SSM) Identification & Prediction using φ ≡ 1 − d. (a) Selected
(3) EIMs emerging from considering the consecutive damage images until close to failure. (b) real and imaginary parts of ln λk
for each kept k-mode. (c) Singular value ςj for the j-th SVD-mode. (d) Predicted damage evolution snapshots using only the
identified modes.
nominal composition and processing history.
We utilize a phase field model [62] in the continuum to
solve for material deformation due to elasticity, plasticity
and damage evolution within the sample. Details of the
model's hardening and damage dynamics can be found
in Refs. [51, 61]. In summary, the model captures finite
deformations in a cubic grid, which are used to calculate
constitutively plastic distortion rates along all 12 FCC
slip systems, as well as damage evolution. The model is
solved using a spectral approach which promotes numer-
ical stability for highly disordered microstructures [61].
As shown characteristically in Fig. 3, the model pre-
dicts the damage of the sample due to a noisy crack
that emanates from the notch and the sharp inclusion
tips.
In the model, fracture takes place at a loading
stress ∼ 100MPa, controlled by both Linear Elastic Frac-
ture Mechanics [63], as well as quasi-brittle fracture in-
duced by the inclusions [44, 61]. Damage/stress/strain
profiles generated in our simulations (Fig. 3(b-d)) can
be easily resembled to profiles that may be generated
by Digital Image Correlation (DIC) techniques [8]. For
the implementation of SEA, we consider as φ fields, the
phase-field damage field d and the first strain invariant
1 ≡ xx + yy + zz. An important parameter is the test-
I
ing strain t, which is set at 0.04% strain in the example
of Fig. 3 but it is varied from 0 to 0.07%.
FIG. 5. Equation-Free Predictions with φ ≡ 1 − d: The
SSM prediction extends only to the behavior of the damage
field. EM-CNN uses the library of prior samples and modes
libΨ to reconstruct a predicted behavior that is very accurate
for the currently modeled stochastic microstructures.
can be thought of as binary alloys with different aging
conditions or compositions. Cases of different initial re-
alizations can be thought of different samples at the same
6
FIG. 6. Demonstration of Single-Sample Mode (SSM) Identification & Prediction using φ ≡ I ()
1 . (a) Selected (3)
EIMs emerging from considering the consecutive damage images until close to failure. (b) real and imaginary parts of ln λk
for each kept k-mode. (c) Singular value ςj for the j-th SVD-mode. (d) Predicted damage evolution snapshots using only the
identified modes.
240µm. As one can see in Figs. 4(b), 6(b), the modes
have eigenvalues µ that denote positive LEs (Re(µ) > 1),
while they also have an oscillating component. Charac-
teristically, though, the strain deformation is primarily
dominated by one mode (cf. Figs. 4(c), 6(c)) which essen-
tially corresponds to the damage instability at the notch
location.
By using the EIMs'
information, one may try to
partially reconstruct the damage evolution in the sam-
ple (cf. Fig. 4(d)) or the strain-invariant evolution
(cf. Fig. 6(d)). This reconstruction consists of the Single
Sample Mode (SSM) prediction (cf. Eq. 9), that is pro-
moted by considering the formal mode expansion into
modes and then extrapolating the modes into the future,
as in any non-linear dynamical system [27, 64]. The SSM
is able to capture the incipient instability, even though
equation-free predictions of average quantities typically
miss the details of the true response (for example, com-
pare Fig. 4(d) with Fig. 3(b)). This is naturally ex-
pected for investigations of precursors in bifurcation dy-
namics [34]. Nevertheless, it is quite promising that the 8
captured EIMs can predict the onset of damage and pro-
vide a simplified damage evolution. This is a signature
of EIMs being appropriate microstructural fingerprints of
the structural response.
The main idea behind microstructural fingerprinting
is that the EIMs (irrespective of which φ-field they are
FIG. 7. Equation-Free Predictions with φ ≡ I ()
1 : The
SSM prediction extends only to the behavior of the damage
field. EM-CNN uses the library of prior samples and modes
libΨ to reconstruct a predicted behavior that is very accurate
for the currently modeled stochastic microstructures.
If SEA is applied on the data shown in Fig. 3, then
EIMs can be estimated. The results for φ ≡ d are shown
in Figs. 4(a), while the results for φ ≡ I
1 are shown in
Figs. 6(a), using t = 0.07% and 30 inclusions of length
7
Ns(cid:88)
based on) may be directly compared to any superposition
of other modes Ψi that have been similarly calculated
from other microstructures. The EIMs Ψi are stored
in the library libΨ, together with all tested mechani-
cal responses for the sample in question (φi = Hi())
(cf. Fig. 1).
In principle, eigen-decomposition of Ψ0
allows for the existence of probability weights wi that
should satisfy: Ψ0 =(cid:80) wiΨi [56]. Then, we conjecture
that if all other pre-existing library samples have been
tested to failure, then we also have that,
(cid:104)φ0(cid:105) =
wiHi()
(16)
i=1
Namely, various different microstructures, tested at
total strain 0 ≤ 2% with identical boundary condi-
tions may exactly model the mechanical response of an
unknown microstructure, using appropriately weighted
sums. For making accurate, data-rich predictions of dam-
age and plasticity we utilize a library of EIMs Ψi and
complete responses up to failure Hi(). Major under-
standing of elastic instabilities originates in the funda-
mental works by Eshelby [65]. Here, we propose a sys-
tematic capture of a scalable set of defects in a consis-
tently tracked manner that extend those studies and un-
derstanding. Thus, it is assumed that r modes Ψi ≡ {ψj}
for j ∈ [1, r] are precisely known for sample i that
were previously tested up to complete failure for de-
sired loading conditions, each providing a functional form
φi = Hi() where φi denotes the loading response of in-
terest (σ, τ , etc.) while provides the loading probe of
interest (eg. loading strain in a particular direction).
E. Deep Convolutional Neural Networks and
General Framework For Using Microstructural
Fingerprinting Towards Mechanical Predictions Up
to Failure
The numerically approximate character of SEA en-
forces the use of advanced approaches that may efficiently
compare, classify and reconstruct fingerprints. The data
sets {Ψ,H} are produced for different microstructures
but same loading and boundary conditions for precise
comparison purposes, so that weights are identified that
provide the following equality,
Ψ(unknown)
0
wiΨi
(17)
(cid:39) (cid:88)
i∈libΨ
The identification of probability weights wi requires a
projection of the library EIMs on the new EIM Ψ0. For
estimating the probability weights wi, we utilize a dCNN.
The implementation is straight-forward in that mode
identification is treated as a face-recognition problem.
While there are multiple approaches towards identifying
appropriate mode projections on the emerging basis [66],
we find that d-CNNs are efficient and robust. CNNs were
originally suggested for handling two dimensional inputs
8
FIG. 8. Accuracy: Effect of the number of initial conditions
and the number of possible microstructures (various inclusion
lengths) used in the synthetic data for producing data such
as in Fig.ccc. The accuracy quickly grows beyond 90% for
> 10 initial realizations for each of > 10 available library
microstructures. The inset shows the effect of the testing
strain, displaying that the accuracy is beyond 90% for testing
strain > 0.1%
(e.g.
image), in which features learning were achieved
by stacking convolutional layers and pooling layers.[67]
dCNNs (dCNN) were introduced [9], for improving per-
formance in image recognition. CNNs and dCNNs are
well fit for automated defect identification in surface in-
tegration inspection, and their optimization is based on
backpropagation and stochastic gradient descent algo-
rithms. [18 -- 21] We apply a standard deep convolutional
neural net for image recognition of similar resolution to
our images, by using the TensorFlow software [68]. The
predictions of this Elastic Mode Convolutional Neural
Network (EM-CNN) approach for the average field φ (ei-
ther damage field (cid:104)d(cid:105) or first strain invariant I
1) and
loading stress field average (cid:104)σzz(cid:105) are shown in Figs. 5
and 7, whereas true mechanical response (cf. Fig. 3(e)) is
overlayed. The EM-CNN results are efficient and robust,
agreeing with the true mechanical response. The success
of the method is clearly connected to the fact that the
library of pre-existing data libΨ contained similar mi-
crostructures to the ones tested. However, we wish to
emphasize that the process is fundamentally not interpo-
lation, but instead an identification of proper statistical
averaging.
The interpretation of the weights wi should be made
in terms of the identification of an appropriate combined
set of defects that provide similar modes to the sample
of interest. Testing a large variety of microstructures
in advance, may allow for the identification of EIMs for
a completely unknown microstructure that may include
completely different compounds through cooperation of
different types of microstructures.
The success of SEA for predictions of mechanical prop-
erties can be estimated by the accuracy (fraction of cor-
rectly classified samples) for different number of avail-
able library microstructures (different number/length of
inclusions in sample), number of initial random realiza-
tions but with same qualitative behavior (same number of
inclusions, different random locations/orientations), dif-
ferent small deformation testing strain (where EIMs are
calculated). The results are summarized in Fig. 8. The
behavior consistently points to perfect predictions when
the number of available microstructures is larger than
15 and the testing strain is larger than 0.02%. In this
work, we did not focus on optimizing the performance
of the dCNN used [68], a topic that will be the focus of
forthcoming publications.
F. Conclusions
In this work, we demonstrated a parameter-free ap-
proach, labeled as SEA, that is focused on characterizing
the stability of elasticity, towards understanding and pre-
dicting mechanical properties of solids that may deform
towards plasticity or/and damage. The main outcome
of this analysis are dynamical modes (EIMs) that char-
acterize spatial instabilities of elasticity. EIMs can be
considered as microstructural fingerprints. We presented
the theory of the approach and then we demonstrated it
in a toy example of crystal plasticity that provided ana-
lytical insights for EIMs' origin and character. Using the
developed methodology, we applied SEA to a realistic
model of plasticity and damage for a model binary alloy.
Through this investigation, and with help from dCNNs,
we showed that the use of EIMs as fingerprints can lead
to successful mechanical predictions for microstructures
that are only tested at small deformations.
The usefulness of SEA can be either towards a sup-
plementation multiscale materials modeling or for pro-
ducing data-rich predictions of mechanical properties in
untested microstructures. Multiscale materials modeling
requires a variety of signatures/tests that may provide
verifiable links across scales towards modeling accuracy;
EIMs may provide such signatures. In addition, SEA's
implementation may be solely focused on experimental
settings, where microscopy may contribute spatially re-
solved information that may be used towards identifying
and classifying EIMs. Future studies will explore SEA's
efficacy in both experimental and modeling fronts.
ACKNOWLEDGMENTS
This work is supported by the National Science Foun-
dation, DMR-MPS, Award No #1709568.
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|
1809.06771 | 1 | 1809 | 2018-09-18T14:35:51 | Exploring rotational resonance in elastic metamaterial plates to realize doubly negative property | [
"physics.app-ph"
] | We report the realization of simultaneously negative effective mass density and shear modulus in a single-phase asymmetric double-sided pillared metamaterial. The negative effective mass density is achieved by the combination of bending and compressional resonances of one pillar whereas the rotational resonance of the other pillar leads to the negative effective shear modulus. The coupling between these two pillars is investigated to describe the formation of the doubly negative property. Then, a pillared system featuring chirality is designed in order to make efficient the excitation of the rotational vibration, the occurrence of which is demonstrated by the transmission spectrum. Finally, numerical simulations of the zero-index refraction are carried out to prove the occurrence of the doubly negative property. | physics.app-ph | physics | Exploring rotational resonance in elastic metamaterial plates to
realize doubly negative property
Wei Wang1, Bernard Bonello1*, Bahram Djafari-Rouhani2, Yan Pennec2, and Jinfeng Zhao3
1Sorbonne Université, UPMC Université Paris 06 (INSP -- UMR CNRS 7588),
4, place Jussieu 75005 Paris, France
2Institut d'Electronique, de Micro-électronique et de Nanotechnologie (IEMN -- UMR CNRS 8520),
Université de Lille Sciences et Technologies, Cité Scientifique, 59652 Villeneuve d'Ascq Cedex, France
3School of Aerospace Engineering and Applied Mechanics, Tongji University, 100 Zhangwu Road,
200092 Shanghai, China
*corresponding author: [email protected]
Abstract:
We report the realization of simultaneously negative effective mass density and shear modulus in a single-phase
asymmetric double-sided pillared metamaterial. The negative effective mass density is achieved by the
combination of bending and compressional resonances of one pillar whereas the rotational resonance of the other
pillar leads to the negative effective shear modulus. The coupling between these two pillars is investigated to
describe the formation of the doubly negative property. Then, a pillared system featuring chirality is designed in
order to make efficient the excitation of the rotational vibration, the occurrence of which is demonstrated by the
transmission spectrum. Finally, numerical simulations of the zero-index refraction are carried out to prove the
occurrence of the doubly negative property.
The advent of locally resonant metamaterials almost two decades ago,1 and the great deal of research
that ensued,2 -- 7 have significantly contributed to the possibilities we have now for controlling the
propagation and the dispersion of acoustic/elastic waves. Some effective elastic properties of these
artificial structures, may exhibit abnormal behaviors in narrow frequency bands where they may be
infinite positive, null or even negative.8,9 In the frequency intervals where only one effective parameter
is negative, either the mass density or the Young's modulus (shear modulus), the propagation of waves
is forbidden. In contrast, if the structure is engineered to support frequency intervals where the doubly
negative property occurs, i.e. simultaneously negative effective mass density and modulus, phenomena
not present in nature may arise, as for instance, the negative refraction or the cloaking effect. In the
past decade, a couple of configurations allowing for the double negativity have been reported in
theoretical10 -- 19 as well as in experimental11,17 works. However, most of these studies were focusing on
bulk waves whereas the control over other types of elastic waves, such as the Lamb waves, is a
prerequisite to the development of planar double-negative elastic metamaterials.20 Among the most
1
suitable candidates in that respect are probably the pillared metamaterials21 -- 26 which could be
described as phononic stubbed plates constructed by depositing cylindrical dots on a thin
homogeneous membrane.27 Their peculiar elastic properties ensue from the vibration of the pillars at
resonance that couples with the wave propagating in the plate. Although to different extents, three
kinds of resonances may be involved in the dynamic properties of these systems, namely the bending,
the compressional and the rotational modes.26 In contrast to the bending and the compressional
resonances, the combination of which has been reported to turn mass density negative in single-sided
pillared metamaterials,31 less attention has been paid to the rotational resonance to date. Interestingly,
it has been theoretically demonstrated that rotational resonance of a core mass in a mass-spring system
can lead to negative effective stiffness12,16,28 and designs involving rotational inertia have been
proposed to demonstrate both numerically and experimentally the occurrence of the double
negativity15,17,29 which in turn widen the scope of applications. Remembering that the double
negativity can be achieved either by combining two different substructures, each supporting a different
resonant mode3,11,13 or by constructing a single structure where two resonances occur at a single
frequency,12,15 -- 17,26 we propose in this letter a new path to achieve the doubly negative property that
consists in combining the bending, compressional and rotational modes into one pillared system.
We first describe and analyze the dynamic behavior of a single-phase asymmetric double-sided
pillared metamaterial (DPM) whose unit cell is shown in Fig. 1(a). We show that the negative
effective mass density (NMD) results from the combination of the bending and compressional
resonances of one pillar whereas the rotational resonance of the other pillar leads to the negative
effective shear modulus (NSM). Lastly, numerical simulations of the zero-index refraction are carried
out to put into evidence the doubly negative property.
Two distinct pillars (labelled as A and B respectively) are concentrically assembled over a thin matrix
plate. Their dimensions were laid down for the resonances to occur in the MHz range: the diameter
and height of pillar A (resp. pillar B) were dA = 80μm (dB = 110μm) and hA = 200μm (hB = 130μm);
the lattice constant and the thickness of the plate were a = 200μm and e = 100μm respectively. Both
the matrix plate and pillars were made of steel whose Young's modulus, Poisson's ratio, and mass
density are E = 200GPa, v = 0.3 and ρ = 7850kg.m-3 respectively. Because of the asymmetry with
respect to the mid-plane of the matrix plate, it can be anticipated that the symmetric and antisymmetric
Lamb waves cannot be decoupled. Before investigating the double-sided pillared system, we have
studied separately the two single-sided pillared metamaterials depicted in Figs. 1(b) and 1(c). Each of
them was built with pillar A or pillar B erected in the center of a square unit cell of side a, on a plate
having a thickness e; we refer hereafter to these systems as SPMA and SPMB. Their band structures
computed using a finite element method are displayed in Figs. 1(e) and 1(f) respectively. The band
structure of SPMA comprises a low frequency band gap that opens up in between 5.19MHz and
5.47MHz. The flatness of the dispersion curves around the lower limit of this band gap suggests that it
2
results from a local resonance of the pillar. This is further evidenced by the eigenmodes at point M of
the first irreducible Brillouin zone (BZ), labelled as C and D in Figs. 1(e) and 2(a). The result
displayed in Fig. 2(b) unambiguously shows that these eigenmodes are the second-order bending
resonance and the first-order compressional resonance of the pillar. The next step was to evaluate the
]effρ . The method consists of applying an external
3×3 dynamic effective mass density matrix [
displacement field U on the four lateral boundaries of the unit cell while leaving the other two faces
free. The induced force F is then derived by evaluating the stress average over the four
2ω π , F and U are related by
boundaries.10,15,30 In the harmonic regime at frequency
11ρ
U , where V denotes the volume of the unit cell. Both the normalized components
= −F
[
2
]
Vω ρ
eff
22
ρ ρ=
11
because of the square symmetry of the unit cell) and
(
33ρ against the excitation frequency
are shown in Fig. 1(g). Both components turn negative from 5.32MHz to 5.49MHz, in good agreement
with the stop band shown in Fig. 1(e) that goes from 5.19MHz to 5.47MHz. The small discrepancy of
about 2.5% at the lower edge of the band gap may be readily ascribed to the phase change across the
unit cell, not accounted for in the calculation since this numerical method is only valid in the long
wavelength limit. It can be stated from this analysis that the low frequency band gap relates to NMD
caused by the combination of the bending and compressional resonances of pillar A.
Regarding the band structure of SPMB displayed in Fig. 1(f), no complete band gap arises in the
investigated frequency range from 0MHz to 7MHz. The eigenmodes at points Γ and M, labelled as E
and F in Figs. 1(f) and 2(a), show that pillar B undergoes an alternative rotational motion around its
center axis. One may suspect that this rotational motion can couple with the local shear deformation of
the matrix plate allowing in turn the effective shear modulus µeff to turn negative. To verify this
assumption, we have calculated µeff using the numerical method described in Refs.10,29,31. In the
calculation, we have considered a simple shear strain field applied along two parallel lateral
boundaries. This sets the local displacement field and excites the rotational vibration of pillar B. The
behavior of µeff against the excitation frequency is then deduced from the equivalence between the
energy of the induced force vector on the lateral boundaries of the unit cell and the strain energy of the
effective medium. The relationship between them can be expressed as
⋅∑F U
V
∂
1=
2
Vµ γ
2 eff
, where V∂
stands for the lateral boundaries of the unit cell and γ represents the applied simple shear strain. The
result displayed in Fig. 1(h) shows that µeff is negative from 5.29MHz to 5.36MHz, in very good
agreement with the frequency interval in between points F (5.29MHz) and E (5.35MHz). Therefore, a
locally resonant band gap should be expected in this region. However, because of the dispersion of the
compressional resonance labelled as G in Fig. 1(f) no complete band gap opens up in this interval. It
should be pointed out that pillar B was specifically designed in such a way that its rotational resonance
falls inside the frequency range of NMD achieved in SPMA. In this case, the double negativity can be
3
expected when combining both pillar A and pillar B to form DPM. In this merged structure, NMD
would result from the bending and compressional resonances of pillar A whereas NSM would ensue
from the rotational resonance of pillar B.
To validate this approach, we have computed the band structure of DPM. As expected, an isolated
negative-slope branch, highlighted in red in Fig. 1(d), appears in between 5.28MHz and 5.35MHz.
Additionally, we show in Fig. 2(b) the displacement field at some characteristic points, labelled from
C' to G' in Figs. 1(d) and 2(a). Comparing the band structures of these three pillared metamaterials
allows understanding the formation of this branch. They are drawn in Fig. 2(a) where the black, red
and blue dotted lines represent the dispersion along ΓM direction of DPM, SPMA and SPMB
respectively. At point M of the BZ, both the bending (point C) and the compressional modes (point D)
slightly shift to points C' and D' upon attachment of pillar B to the plate. For both these resonances,
the displacement fields of DPM displayed in Fig. 2(b) show that the deformation of pillar B is very
small at the compressional resonance or even null at the bending resonance. This suggests that pillar B
acts as an inert mass attached to the plate that simply shifts the resonant frequencies of pillar A.
Accordingly, the frequency interval of NMD generated by resonances C' and D' of pillar A in DPM
also shifts and appears now in between 5.21MHz and 5.48MHz instead of 5.19MHz to 5.47MHz in
SPMA, but the overall mechanism leading to NMD is the same for both structures.
The situation is totally different when comparing the band structures of DPM and SPMB. In this case
appending pillar A to SPMB does not summarize into a simple shift of the resonant frequency of pillar
B: at point M, the compressional resonance labelled as G' in Fig. 2(a) affects both pillars in DPM (see
Fig. 2(b) panel G') and therefore the shift from G (compressional resonance of SPMB) to G' cannot be
ascribed to an inert mass attached to the plate like before. At the same time, the eigenfrequencies at
points labelled as E and F in Figs. 1(f) and 2(a) remain unchanged because there is no coupling
between the rotational vibration of pillar B and the bending and compressional vibrations of pillar A.
For a sake of coherency in the notations, these points are labelled as E' and F' in Figs. 1(d) and 2(a).
As mentioned before, the effective shear modulus turns negative in the frequency interval between
these two points. Therefore, both NMD and NSM are achieved in this interval which perfectly
explains the occurrence of the negative-slope propagative branch in Fig. 1(d). More generally, the
preceding analysis demonstrates that the double negativity can be obtained if the bending,
compressional and rotational resonances of the pillared system are well designed to occur within the
same frequency interval but it says nothing on how to excite these resonances.
4
Figure 1: (a)-(c) Representative square lattice unit cells of DPM, SPMA and SPMB respectively and (d)-(f)
their corresponding band structures. (g) Normalized effective mass density components
33ρ (black line) and
11ρ (red line) of SPMA. (h) Normalized effective shear modulus of SPMB.
5
Figure 2: (a) Comparison of the band structures of DPM (black dotted lines), SPMA (red dotted lines) and
SPMB (blue dotted lines) along ΓM direction. (b) Normalized total displacement and deformation of the unit
cell corresponding to the points indicated in panel (a) and Figs. 1(d)-1(f).
One might take advantage of the in-plane polarization of a SH Lamb wave to trigger the rotational
vibration of the pillar and actually we have verified that an incident wave with the frequency inside the
double-negative branch can propagate across the metamaterial (not shown here). However, the other
two types of Lamb wave waves, i.e. the symmetric and the antisymmetric Lamb modes, are polarized
in the sagittal plane and therefore they cannot excite the rotational resonance because of the mirror
symmetry in the unit cell. To overcome this difficulty, chirality may be introduced in the pillar so that
the waves propagating in the plate can create an asymmetric deformation. Both the cross section and
the side view of pillar B fulfilling this requirement is shown in Fig. 3(a). Eight flanks equally spaced
in azimuth with a length l = 60μm and a width w = 10μm are inserted along a solid cylinder with a
diameter d = 100μm. Pillar B is formed by stretching the cross section along negative z direction with
height h = 105μm and a twist angle θ = 45º in anti-clockwise direction as shown in the bottom panel of
Fig. 3(a). The corresponding band structure along ΓX direction is displayed as red lines in Fig. 3(b).
The double-negative branch goes from 5.37MHz to 5.41MHz. To illustrate the efficiency of chirality
in exciting the rotational vibration, the transmission spectrum of an antisymmetric Lamb wave
impinging at normal incidence a structure made of nine unit cells along x-axis and infinite along the y-
direction is displayed as red lines in Fig. 3(c). For comparison, the black solid lines in Fig. 3(b) and
3(c) correspond to DPM shown in Fig. 1(a). In the absence of chirality, the transmission coefficient at
a frequency in the double-negative branch is null since the rotational resonance is not excited with
such a design. In contrast, the chiral pillars allow for a transmission coefficient of about 0.25 thanks to
the combination of the bending and compressional vibrations of pillar A and the rotational vibration of
pillar B, which is the key point for the occurrence of the doubly negative property.
6
Figure 3: (a) Representative profile of the chiral pillar B. (b) Band structure along ΓX direction of DPM
involving the chiral pillar B (red lines) or without chirality (black lines). (c) Transmission spectrum of an
antisymmetric Lamb wave impinging at normal incidence on the phononic crystal with (red line) and without
(black line) the chiral pillar.
One of the most amazing properties that ensues from the double negativity is the cloaking effect. At a
frequency in the negative-slope branch, this effect results from the fact that both phase velocity and
wavelength become infinite and in turn we find the case of a zero refractive index material.10,20,32 -- 34
We have investigated this effect at the frequency of 5.4MHz, where the effective shear modulus tends
toward infinity. The FEM model is shown in the top panel of Fig. 4. It consists of 132 unit cells and
features a 7a×3a rectangular void in its center. A zero-order antisymmetric Lamb wave is excited at a
distance of 1mm from the left edge of the metamaterial and perfectly match layers are implemented on
each side of the sample to eliminate any reflection from the boundaries. Periodic boundary conditions
are applied on the other two edges. The out-of-plane component of the displacement field at 5.4MHz
is displayed in the middle panel in Fig. 4. It can be seen that the wave front keeps plane upon
transmission through the sample, except around the void where scattering effects are observable. As a
consequence of the infinite effective shear modulus and finite effective mass density in the
metamaterial, the phase velocity gets nearly infinite and there is no phase change of the antisymmetric
Lamb wave propagating in the metamaterial, allowing for a cloaking effect in this system. In contrast,
when the working frequency is tuned to 6MHz, i.e. a frequency where the effective shear modulus is
positive, the incident antisymmetric Lamb wave undergoes strong scattering on the void, giving rise to
the distorted wave front observable in the bottom panel of Fig. 4. This simple analysis of the
transmission through the pillared system unambiguously shows that the shielding of substructures at
specific frequencies may be achieved with this geometry.
7
Figure 4: FEM model implemented to verify the cloaking effect (top panel); out-of-plane component of the
displacement field upon antisymmetric excitation at frequencies 5.4MHz (middle panel) and 6MHz (bottom
panel).
To conclude, we have realized the doubly negative property in an asymmetric double-sided pillared
metamaterial. The mechanism responsible for the negative effective mass density is described as being
the combination of the bending and compressional resonances of one pillar, whereas the negative
effective shear modulus results from the rotational resonance of the other. This design contributes to
broaden the field of applications of the pillared metamaterials that includes the negative refraction and
over-diffraction-limit imaging of Lamb waves.
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10
|
1708.05927 | 1 | 1708 | 2017-08-20T03:30:38 | Si-based GeSn lasers with wavelength coverage of 2 to 3 {\mu}m and operating temperatures up to 180 K | [
"physics.app-ph"
] | A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 {\mu}m. The GeSn alloys were grown using newly developed approaches with an industry standard chemical vapor deposition reactor and low-cost commercially available precursors. The achieved maximum Sn composition of 17.5% exceeded the generally acknowledged Sn incorporation limits for using similar deposition chemistries. The highest lasing temperature was measured as 180 K with the active layer thickness as thin as 260 nm. The unprecedented lasing performance is mainly due to the unique growth approaches, which offer high-quality epitaxial materials. The results reported in this work show a major advance towards Si-based mid-infrared laser sources for integrated photonics. | physics.app-ph | physics | Si-based GeSn lasers with wavelength coverage of 2 to 3 μm
and operating temperatures up to 180 K
Joe Margetis1*, Sattar Al-Kabi2*, Wei Du3,4, Wei Dou2, Yiyin Zhou2,5, Thach Pham2,5, Perry
Grant2,5, Seyed Ghetmiri2, Aboozar Mosleh2, Baohua Li5, Jifeng Liu6, Greg Sun7, Richard
Soref7, John Tolle1, Mansour Mortazavi3, Shui-Qing Yu2†
1ASM, 3440 East University Drive, Phoenix, Arizona 85034, USA
2Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701
USA
3Department of chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff,
Arkansas 71601 USA
4Department of Electrical Engineering, Wilkes University, Wilkes-Barre, Pennsylvania 18766
USA
5Arktonics, LLC. 1339 South Pinnacle Drive, Fayetteville, Arkansas 72701 USA
6Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire 03755 USA
7Department of Engineering, University of Massachusetts Boston, Boston, Massachusetts 02125
USA.
*These authors contributed equally to this work.
†Corresponding author.
Abstract
A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from
direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-
V integration approach. We demonstrated optically pumped GeSn lasers on Si with broad
wavelength coverage from 2 to 3 μm. The GeSn alloys were grown using newly developed
approaches with an industry standard chemical vapor deposition reactor and low-cost
commercially available precursors. The achieved maximum Sn composition of 17.5% exceeded
the generally acknowledged Sn incorporation limits for using similar deposition chemistries.
The highest lasing temperature was measured as 180 K with the active layer thickness as thin as
1
260 nm. The unprecedented lasing performance is mainly due to the unique growth approaches,
which offer high-quality epitaxial materials. The results reported in this work show a major
advance towards Si-based mid-infrared laser sources for integrated photonics.
Keywords: GeSn, infrared laser, Si photonics
Si-based electronics industry has driven the digital revolution for an unprecedented success.
As a result, there has been tremendous effort to broaden the reach of Si technology to build
integrated photonics1-3. Although great success has been made on Si-based waveguides4,
modulators5, and photodetectors6,7, a monolithic integrated light source on Si with high
efficiency and reliability remains missing and is seen as the most challenging task to form a
complete set of Si photonic components. Currently, Si photonics utilizes direct bandgap III-V
lasers as the light source through different integration approaches such as wafer-bonding or
direct-growth, which has seen significant progress in the last decade8-11. From the other side, a
laser made from direct bandgap group-IV materials offers its own unique advantages particularly
the material integration compatibility with the complementary metal–oxide–semiconductor
(CMOS) process. However, group-IV materials such as Si, Ge, and SiGe alloys have been
excluded from being an efficient light source due to their indirect bandgap nature. Although the
optically pumped Er doped Si laser12 and the Si Raman laser13 have been reported, they do not
rely on bandgap emission and cannot be operated under direct electrical pumping. Recently
developed Ge lasers14-16 employed strain-engineering and heavily n-type doping to compensate
for its indirect bandgap, yet the high threshold and fabrication difficulties remain unresolved thus
far.
It has been theoretically predicted that the group-IV alloy GeSn could achieve a direct
bandgap by incorporating more than 6-10% Sn into Ge17-19. In order to overcome the limit of
2
low solid solubility of Sn in Ge (<1%), low temperature growth techniques under non-
equilibrium conditions have been successfully developed20,21, leading to the first experimental
demonstration of direct bandgap GeSn alloy22 and the optically pumped GeSn interband lasers23-
25. The recent engagement of mainstream industrial chemical vapor deposition (CVD) reactors
for the development of GeSn growth techniques has enabled those significant results, which
implies that the growth method is manufacturable and can be transferred to the foundry/fab3. In
this paper, we demonstrate the first set of optically pumped GeSn edge-emitting lasers that
covers an unprecedented broad wavelength range from 2 to 3 μm with lower lasing threshold and
higher operation temperature than all previous reports. This superior laser performance is
attributed to the unique epitaxial growth approaches that were developed based on newly
discovered growth dynamics. Contrary to the common belief that growing GeSn with high Sn
composition is mainly limited by the chemistry of the deposition process, we found that the Sn
incorporation is actually limited by the compressive strain. Strain-induced Sn segregation results
in continuous ejection of Sn solute atoms which prevents increasing the Sn concentration
through the adjustment of the SnCl4 partial pressure alone. By relieving the strain constraint, a
much higher Sn composition with high crystallinity was obtained.
It is generally acknowledged that a higher Sn composition (more than 10%) is preferred to
obtain high performance GeSn lasers as higher Sn composition enables more bandgap directness
and enhances a more favorable direct radiative recombination. For GeSn growth using SnCl4
and different Ge-hydrides as precursors, growth dynamics studies revealed that lower growth
temperature is required for higher Sn incorporation26-30. Currently, the Sn compositions up to
12% were obtained by using GeH4 as precursor26,27 while the Sn compositions up to 15% were
achieved by using Ge2H6 or Ge3H8 as precursor28-30. Using GeH4 is preferred from an industrial
3
manufacturing perspective due to its much lower cost. However, use of the Ge2H6 and Ge3H8
remains attractive due to the fact that the high order hydrides decompose more readily at lower
temperatures, which facilitates the growth of higher Sn composition GeSn. Although significant
progress has been made, maximum Sn compositions using industrial CVD methods seemed to
have plateaued in the ~15% Sn range regardless of precursor choice or growth recipe specifics.
Such a limit has been mainly attributed to the chemical reaction balance dominating the growth
process and the availability, or lack thereof, of disassociated Ge-hydrides and Sn-chlorides as the
temperature is continually decreased to counteract Sn out-diffusion/segregation28-30.
In our recent work, we have observed a clear spontaneous-relaxation-enhanced (SRE) Sn
incorporation process. When GeSn is grown on a Ge buffer using a nominal 9% GeH4 based
recipe, the Sn incorporation starts from 9% and the material gradually relaxes and then the
subsequent GeSn layer Sn composition changes to 12%. The growth normally results in a
distinct two-layer structure with the first layer being defective and gradually relaxed and the
second layer being low-defect density and almost completely relaxed. The fact that the growth
recipe is maintained the same for the entire SRE growth process strongly suggests that the
compressive strain rather than the chemical reaction is the dominant limiting factor of Sn
incorporation24. This discovery inspires us to adopt two approaches as the new growth strategy
to obtain high Sn compositions: i) the SRE approach and ii) the GeSn virtual substrate (VS)
approach, which lead to the final Sn composition up to 15.9% and 17.5%, respectively. The
GeSn VS approach utilizes the GeSn layers obtained through the SRE approach as the buffer to
grow higher Sn composition films with an optimized recipe. The relaxed template allows for
higher SnCl4 partial pressures to be used which when directly applied to growth on a Ge buffer,
would cause strain-induced Sn segregation and precipitation.
4
In this work, two sets of GeSn samples were grown using an industry-standard ASM
Epsilon® 2000 PLUS reduced pressure chemical vapor deposition (RPCVD) reactor27. As listed
in Table 1: samples A to E were grown via the SRE approach (two-layer GeSn structure) while
samples F and G were grown via the GeSn VS approach (two layer GeSn structure plus an
additional third GeSn layer). Note that sample B was capped with a 10 nm Ge passivation layer
which lately showed negligible effects for the overall device performance. A standard Ge buffer
layer was grown on Si in-situ prior to the GeSn deposition. After the growth, the GeSn layer
thickness and quality in terms of threading dislocation density (TDD) were analyzed using
transmission electron microscopy (TEM) and etch pit density techniques. The Secondary Ion
Mass Spectrometry, X-ray diffraction (XRD) 2θ-ω scan and reciprocal space mapping (RSM)
were used to determine the Sn compositions and strain after cross check, based on which the
electronic bandgap structures at room temperature were calculated. The detailed material
characterization results are also summarized in Table 1.
Table 1 Summary of sample material and lasing characterization results
GeSn 1st layer*
GeSn 2nd layer
GeSn 3rd layer**
Lasing
Sn% Thickness (nm)
Sn% Thickness (nm)
Sn%
Thickness (nm)
#
A
B
C
5.6%
8.3%
9.4%
D 10.5%
E 11.6%
F
9.8%
G 11.9%
210
280
180
250
210
160
310
7.3%
9.9%
11.4%
14.4%
15.9%
12.7%
15.5%
680
850
660
670
450
680
550
16.6%
17.5%
290
260
T0 (K)
wavelength @
77 K (nm)
N. A.
76
87
73
N. A.
84
73
2070
2400
2461
2627
2660
2767
2827
Threshold @
77 K (kW/cm2)
300
117
160
138
267
150
171
*The "GeSn 1st layer" is directly in contact with the Ge buffer and the Sn composition is the initial
nominal value. It gradually relaxes to a composition close to the composition in the "GeSn 2nd layer;
**The GeSn 3rd layer was observed from samples F and G.
5
Figure 1. Material characterization of samples. (a) The 2θ-ω scan showing the gradually shifted GeSn peaks with
increased Sn%. The fitted peaks indicate the existence of two and three GeSn layers for samples D and G, respectively.
(b1) and (b2) RSM contour plots of sample D and G indicating the relaxed multiple GeSn layers. (c1) and (c2) TEM
images of the samples D and G showing high quality GeSn top layers and the formation of TD loop in the 1st GeSn layers.
(d) Summary of the material growth. The relaxed GeSn results in more incorporated Sn during the following growth. The
Sn composition of 17.5% was achieved with stepped GeSn buffer growth.
Figure 1a shows the XRD 2θ-ω scan with all curves aligned with the Si peak. The peaks at
66.1º are attributed to the Ge buffer while the peaks between 65.5o-63.5º belong to GeSn layers.
As the Sn composition increases, the GeSn peak shifts towards a lower angle. The asymmetric
GeSn peak for each sample indicates the existence of multiple layers corresponding to different
Sn compositions in the GeSn film. Based on a multi-peak fitting process (Supplementary
6
Section 1), for the samples A to E, two distinct GeSn peaks can be obtained (See sample D as an
example); while for the samples F and G, three peaks were clearly resolved (fitting curves for
sample G are shown). The multi-GeSn-layer characteristic was also observed in RSM and TEM
images. Figures 1-b1 and b2 shows the RSM contour plots of samples D and G indicating the
two-layer and three-layer characteristics, respectively. The dashed ellipse annotates each GeSn
layer, which features an almost complete strain relaxation. The high resolution TEM images of
samples D and G are shown in Fig. 1-c1 and c2. For the Ge buffer layer in each sample, the
majority of defects were localized in the Ge/Si interface so that the high-quality Ge buffer was
obtained. For the GeSn alloy, each layer can be clearly observed. Note that for each sample, the
1st GeSn layer over the Ge buffer is defective due to the high TDD, which is attributed to the
lattice mismatch between the Ge buffer and the 1st GeSn layer. However, the formation of
threading dislocation loops in the 1st GeSn layer prevents the defects from being propagated to
the 2nd GeSn layer of sample D and to the 2nd and 3rd GeSn layers of sample G, resulting in low-
defect density GeSn top layers. The mechanism of formation of dislocation loops during GeSn
growth could be attributed to the special crystallographic plane and the external shear stress31.
By using TEM and etch pit density measurements, a TDD of 106 cm-2 was obtained for the GeSn
top layer while the TDD of Ge buffer layer (in a separate control sample with the same Ge
thickness) was measured as 107 cm-2.
Figure 1d summarizes the GeSn growth results that were attained using the newly
developed approaches. For instance in the SRE approach, using a nominal 10.5% recipe for a
total 920-nm-thick growth (sample D), the Sn compositions were measured as 10.5% and 14.4%
in the 1st and 2nd layers (250 and 670 nm thick), respectively. Using this approach, the
1.6%~4.3% increase in Sn composition for the 2nd layer compared to that in the 1st layer was
7
achieved for all samples. For the growth using the GeSn VS approach, for example sample G, a
relaxed GeSn buffer with a final Sn composition of 15.5% was first obtained and then followed
by a top GeSn layer with a much higher Sn composition of 17.5%, breaking the record of Sn
incorporation not only for GeH4-based CVD recipe (12%)27, but also Ge2H6-based recipe
(15%)30.
Figure 2. Temperature-dependent PL spectra of samples D and G. The dramatically increased
PL intensity at lower temperature indicates the direct bandgap material nature. Inset: Normalized
integrated PL intensity. The additional valley feature appearing at ~3.0 μm in all spectra is due to
the water absorption.
The temperature-dependent photoluminescence (PL) measurements were performed to
confirm the bandgap directness of the GeSn layers. For each sample, as the temperature
8
decreases from 300 K to 10 K, the PL intensity dramatically increases, showing the clear
signature of the direct bandgap similar to that of III-V materials such as GaAs and InP. The
typical temperature dependent PL spectra for samples D and G are shown in Fig. 2. The
observed PL peak blue-shift at lower temperature is expected due to the increase of the bandgap.
From 300 to 10 K, sample D features a 4-times increase of integrated PL intensity while sample
G features a 25-times increase of integrated PL intensity, as shown in Fig. 2 inset. The distinct
difference is attributed to enhanced direct bandgap radiative recombination due to a higher Sn
composition in sample G. It is worth noting that since the penetration depth of the 532-nm
excitation laser beam is less than 100 nm, the optical transitions including light absorption and
emission can occur only in the top GeSn layer (i.e. the 2nd layer of sample D and the 3rd layer of
sample G). To further investigate the optical transition property, a 1060-nm laser with
penetration depth of over 1 μm was used. Very similar PL spectra were obtained, indicating that
the PL emissions are mainly from the band-to-band recombination in the top GeSn layer. This
can be interpreted as the following: since the top GeSn layer features a narrower bandgap
compared to the GeSn layer(s) underneath due to higher Sn composition and a type-I band
alignment, the carriers are confined in the top GeSn layer to recombine. The carrier confinement
effect was further confirmed by the band diagram calculation results (Supplementary Section 2).
These results also point to a promising path to achieve type-I quantum well lasers in the GeSn
system.
Ridge-waveguide-based edge-emitting lasers were fabricated by standard lithography and
etching processes. A low temperature wet chemical etching process was developed in this work.
By using a mixture of HCl: H2O2: H2O=1:1:10 at 0 °C, an average etching rate of ~20 nm/min
was obtained, which is almost a constant regardless of the Sn composition. Due to the lateral
9
etching, the width of the top and bottom of the ridge waveguide were measured as 2 and 5 μm,
respectively. The etching depth was selected as 800 nm to provide a sufficient mode
confinement. After etching, the samples were lapped down to ~70 μm thickness and then
cleaved to different cavity length to finish the devices. Figures 3a and 3b show the schematic
waveguide structure and cross-sectional view of the scanning electron microscope (SEM) image.
Atomic-force microscopy (AFM) characterizations have been performed on as-grown samples
and post-etch samples (Supplementary Section 4) with values ranged from 3.75 to 18.00 nm, and
6.27 to 13.70 nm, respectively. The surface roughness of post-etch samples is estimated to only
result in moderate scattering loss and therefore the laser performance would not be deteriorated.
Figure 3a inset indicates an overlap of the fundamental TE mode with the GeSn layer for a
confinement factor of 85.2% (Supplementary Section 5).
Figure 3. GeSn optically pumped laser using samples D and G. (a) Schematic of layer structure (not to scale). (b) Cross-
10
sectional view of SEM shows device mirror-like facet. Inset: fundamental TE mode profile. (c) and (d) Light output power
versus pump laser power at various temperatures. Inset: Lasing spectra at 77 K indicating the multi-mode behavior (upper
x-axis shows energy in eV); characteristic temperature (T0) of sample G.
The optical pumping characterization was performed using a pulsed 1060 nm laser with 45
kHz repetition rate and 6 ns pulse width. The laser-output versus pumping-laser-input (L-L)
curves for each sample were measured from 77 K to each individual maximum operating
temperature. At 77 K, the lasing thresholds for all samples were obtained ranging from 117 to
300 kW/cm2, as listed in Table 1. The relatively high lasing-onset excitation of 300 kW/cm2 of
sample A is mainly due to the lower Sn composition relative to other samples, which results in
less favorable populating of electrons in the direct Γ valley under the same pumping power
density. The lasing threshold of 267 kW/cm2 for sample E might be due to the slightly degraded
material quality as it features the highest Sn composition (15.9%) among those samples grown
via the SRE approach. The relative lower quality of sample E was confirmed by XRD
characterizations, which indicate that sample E features larger peak line-width of 2θ-ω scan and
broadened contour plot of RSM compared to other samples. The thresholds of the remaining
five samples ranging from 117 to 171 kW/cm2 at 77 K are lower than that of our previously
demonstrated GeSn laser24 (~200 kW/cm2).
Figure 3c and 3d show the L-L curves for sample D (550 μm-long device) and G (700 μm-
long device). For each curve the threshold characteristic was clearly observed. The lasing
wavelengths were observed at 2630 and 2845 nm at 77 K for samples D and G, respectively.
The maximum lasing temperatures were measured as 160 and 180 K for samples D and G, with
the corresponding thresholds of 795 and 920 kW/cm2, respectively. Both maximum operating
temperatures are higher than that of the reported GeSn micro-disk lasers25 (130 K) and ridge
11
waveguide lasers (110 K).24 We attribute the superior laser performance to the high-quality
materials that were grown via unique approaches, and to the significant reduction of the modal
overlap with the misfit dislocations localized at the Ge/GeSn interface32.
The investigation of the lasing mode characteristics was performed via lasing spectra
measurement. Due to the relatively large area of the cavity facet, the lasing spectra exhibit a
typical multimode lasing characteristic. The lasing spectra at 77 K for samples D and G are
shown in Fig. 3c and 3d insets. At the 1.2-times lasing threshold excitation power density for
sample D, the full width at half maximum (FWHM) of each resolved peak was estimated ranging
from 6 to 11 nm (1.3 to 2.4 meV). On the other hand, at 2.0-times lasing threshold for sample G,
the FWHM of each resolved peak was extracted ranging from 9 to 12 nm (1.9 to 2.6 meV).
Compared with the FWHM of PL spectra at 10 K shown in Fig. 2, which are 114 and 122 nm
(22.6 and 21.2 meV) for samples D and G, respectively, the dramatically reduced line-widths
shown in Fig. 3c and 3d insets indicates obvious evidence of lasing. At a pumping power
density slightly higher than lasing threshold, the multi-peaks revealing the lasing modes can be
observed clearly. As the pumping power increases, the modes become more pronounced and
most peaks grow, resulting in the overall lasing intensity increase.
The characteristic temperature for each sample was extracted by temperature-dependent
lasing threshold except for samples A and E due to insufficient data points, as listed in Table 1.
As an example, Figure 3d inset (bottom) presents the fitted characteristic temperature of 73 K
between 77 and 180 K for sample G. For the samples studied in this work, their characteristic
temperatures ranging from 73 to 87 K show slight fluctuation, which could benchmark the
current phase of development of GeSn material for laser applications. In comparison, the
12
characteristic temperatures of earlier developed InP and GaAs based optically pumped lasers
were reported as 100 and 129 K, respectively33,34.
The laser emission spectra were fully studied and are summarized in Fig. 4a. At 77 K, lasing
spectra from each sample were observed. As temperature increases, except for samples A
(lowest Sn composition) and E (slightly degraded material quality), the GeSn lasers fabricated
from other samples lased up to 140 K. In particular, samples D and G lased at 160 K, and the
maximum lasing temperature is 180 K which was observed from sample G. The main factors
that determine the lasing performance are the material gain, the active layer thickness, the
surface roughness of the device, and the dominant nonradiative recombination, which vary
among the samples investigated in this work at different temperatures, resulting in each
individual maximum lasing temperature. It is worth noting that the early theoretical prediction
for the highest achievable lasing temperature for the GeSn double heterostructure (DHS) laser
was 200 K35, beyond which the Auger recombination could be dominant and stop the lasing
process. With the current lasing temperature being close to the theoretical predication, it is
essential in the future to switch from the bulk DHS to more advanced device structures such as
utilizing multiple GeSn quantum wells for room temperature operation35-37, as suggested in ref.
35 that with a possible active region design of 20 SiGeSn/GeSn QWs. As we have shown
previously in the PL results, the type-I alignment between the GeSn layers of different
compositions provides a promising path to the quantum well lasers.
13
Figure 4. GeSn laser performance characterization. (a) Spectra of GeSn lasers fabricated from samples A to
G at temperatures from 77 to 180 K. (b) Lasing spectra at 77 K of samples compared with those PL spectra.
The lasing peak blue-shift is due to the typical band filling effect.
By increasing the final Sn compositions from 7.3% to 17.5%, a broad coverage of lasing
wavelengths from 2 to 3 μm was achieved (2070 to 2945 nm). Note that the lasing wavelengths
were determined not only by Sn composition but also strain status, operating temperature, active
region thickness, and carrier population profile. To the best of our knowledge, this is the first
demonstration of GeSn laser sets with such broad wavelength coverage. Moreover, the lasing
at 2945 nm (Sample G at 180 K) is the longest emission wavelength reported so far from GeSn
based lasers. In fact, there is no fundamental limit to extend lasing spectra towards even longer
14
wavelengths via the unique material growth approach developed in this work to further increase
Sn incorporation.
Further analysis on lasing behavior was conducted by the study of emission peaks
comparison between PL and lasing, as plotted in Fig. 4b. For samples D and G, the lasing peaks
showed a blue-shift of 28 and 308 nm relative to their PL peaks at 77 K, respectively. This blue-
shift can be interpreted as the typical band filling effect, which is commonly observed from III-V
lasers such as GaAs- and InP-based lasers with their relatively thinner gain layer. Sample G
features more blue-shift relative to sample D. This is mainly due to the thinner GeSn top layer of
sample G (3rd GeSn layer of 260 nm) compared to that of sample D (2nd GeSn layer of 670 nm).
Therefore, for sample G the carriers would be confined in a small region near the top surface due
to the nature of built-in type-I band alignment between the 3rd and 2nd GeSn layers, leading to a
thinner active gain layer with higher injected carrier density, and consequently resulting in
carriers populating at higher energy states and a more pronounced blue-shift at the intense
pumping condition. A longer wavelength beyond 3 µm could be accessible if the third layer
GeSn in sample G is increased to further increase the modal gain and reduce the band filling.
Observing band filling for given GeSn thickness combined with knowledge of the band
alignment for the current GeSn heterostructures provides a useful insight for the design of future
quantum well based GeSn lasers by choosing the right well/barrier materials as well as the
number of the wells.
In conclusion, we have demonstrated the GeSn optically pumped lasers covering the lasing
wavelengths from 2 to 3 μm. The GeSn samples were grown using an industry standard CVD
reactor with low-cost SnCl4 and GeH4 precursors. Newly discovered epitaxial growth dynamics
indicate that the Sn incorporation is primarily limited by strain-induced Sn-segregation, with the
15
deposition chemistry being secondary. By utilizing spontaneous-relaxation-enhanced Sn
incorporation and GeSn virtual substrate approaches, a maximum Sn composition of 17.5% was
achieved, which breaks the previous suspected 15% Sn limit even for using high order hydrides
as precursors. Ridge waveguide-based edge-emitting F-P lasers were fabricated. Lasing from
2070 to 2945 nm was achieved with the maximum lasing temperature of 180 K. At 77 K, the
lasing onset excitation of 117 kW/cm2 was obtained. Significant lasing peak blue-shift relative
to the PL peak was observed, reflecting the band filling effect, which is a typical characteristic of
direct bandgap lasers such as those made from III-Vs. This work is an essential step towards
obtaining high performance Si-based monolithic integrated mid-infrared laser sources.
METHODS
Ge buffer growth. A nominal 600 nm-thick Ge buffer layer was firstly grown on Si followed
by an in-situ annealing to reduce the defects. The growth of Ge on Si proceeded via a Stranski–
Krastanov mechanism in which an initial ~3 continuous monolayers were formed followed by
the formation of islands. In this process the initial growth was conducted at low temperatures to
extend the 2-D growth followed by a high temperature growth in which the bulk of the film was
deposited. The higher temperature growth reduced the dislocations by promoting glide and
subsequent annihilation of threading defects as well as providing increased growth rate. Further
defect reduction can be accomplished by in-situ annealing of the layer. Utilizing this approach
the relaxed Ge buffer layer with threading defect density of ~1×107 cm-2 was obtained.
Photoluminescence (PL) measurements. The PL measurements were performed using a
standard off-axis configuration with a lock-in technique (optically chopped at 377 Hz). A
continuous wave (CW) laser emitting at 532 nm wavelength was used as an excitation source.
16
The laser beam was focused down to a 100 μm spot and the power was measured to be 100 mW.
The PL emission was collected by a spectrometer and then sent to a PbS detector (cut-off at 3.0
μm, higher signal-to-noise ratio) or a InSb detector (cut-off at 5.0 μm, lower signal-to-noise
ratio).
Optical pumping measurements. The optical pumping characterization was performed using a
pulsed laser operating at 1060 nm with 45 kHz repetition rate and 6 ns pulse width. The laser
beam was collimated to a narrow stripe (~20 µm width and 0.3 cm length) via a cylindrical lens
to pump the GeSn waveguide structure. Since the spatial intensity profile of the laser beam
features Gaussian distribution, the knife-edge technique was applied to determine the pumping
power density. The device was first mounted on a Si chip carrier and then placed into a
continuous flow cryostat for low temperature measurement. The emission from the facet was
collected by a spectrometer and then sent to a PbS or InSb detector. The integrated emission
intensity was measured by setting the grating at zero order.
AUTHOR INFORMATION
Corresponding Author
*E-mail: [email protected]
Author contributions
S.Y., M.M., B.L., and W.D. proposed and guided the overall project. J.M., and J.T. planned and
conducted
the GeSn epitaxial growth.
W.D., P.G., and A.M. performed material
characterization. Y.Z., and T.P. fabricated the laser devices. S.G., and S.A. developed and
conducted the optical and lasing measurements. W.D., Y.Z., J.L., G.S., and R.S. were involved
17
with lasing evaluation, band diagram and mode calculations. All authors discussed the results
and commented on the manuscript.
ASSOCIATED CONTENT
Supporting information
Supplementary information is available in the online version of the paper. Reprints and
permissions information are available online at www.nature.com/reprints. Correspondence and
requests for materials should be addressed to S.Y.
ACKNOWLEDGEMENTS
The authors acknowledge financial support from the Air Force Office of Scientific Research
(Grant Nos. FA9550-14-1-0205, FA9550-14-1-0147, FA9550-16-C-0016, FA2386-14-1-4073),
the National Science Foundation (Grant No. DMR-1149605) and Asian Office of Aerospace
Research and Development (Grant No. FA2386-16-1-4069). We are thankful for the technical
support from Institute for Nanoscience & Engineering, University of Arkansas, Dr. M.
Benamara's assistance in TEM imaging and Dr. A. Kuchuk's assistance in XRD measurements.
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21
SUPPLEMENTARY INFORMATION
Table of Contents:
1. Material characterization
2. Band diagram calculation
3. Bandgap characteristic analysis
4. Surface profile characterization
5. Lasing mode pattern calculation
6. General characterization of GeSn laser grown on Si
7. References
22
1. Material Characterization
The GeSn peak fitting process is as follows: the number of peaks is determined by the outline of
the curve, i.e., the peak-feature and the shoulder-feature were counted. Then the Gaussian
distribution was used to fit each peak. For sample D, the 2θ-ω scan curve was fitted with two
Gaussian peaks of the 1st GeSn layer (blue dash curve) and the 2nd GeSn layer (red dash curve)
wherever possible, as plotted in Fig. S1(a); while for sample G, three Gaussian peaks
corresponding to the 1st, 2nd, and 3rd GeSn layers were fitted using the same process, as shown in
Fig. S1(b). The number of layers was also confirmed by the TEM image. Compared to our
previous study on GeSn thin film with compressive strain1, the measured GeSn peaks in this
work shifted towards lower angle due to relaxation of the material (having the same Sn
composition). Moreover, the narrower peak line-width of the top GeSn layer compared to that of
the bottom GeSn layer(s) indicates its higher material quality, which agrees well with the results
from measured threading dislocation density (TDD).
The in-plane (a∥) and out-of-plane (a⊥) lattice constants of the GeSn alloys were obtained
from XRD-RSM (from (-2 -2 4) plane reflection), as shown in Fig. S2. The dashed red line
represents the strain relaxation. By fitting the broadened contour plots, the lattice constants and
strain for each GeSn layer were extracted. Note that for sample B, another Ge layer was shown
with larger in-plane and smaller out-of-plane lattice constants. This is due to the 10 nm-thick Ge
cap layer initially designed for passivation which lately showed negligible effects for the overall
device performance.
The Sn compositions were determined by secondary
ion mass spectrometry (SIMS)
measurements for all samples except for samples A and B as they feature lower Sn composition,
23
therefore their Sn compositions were determined by the XRD measurements with well accepted
bowing parameter2.
The layer thicknesses were determined by TEM images, from which each GeSn layer can be
clearly resolved so that the layer thickness can be directly measured. The measured thicknesses
were cross checked by SIMS. Figure S3 shows the typical TEM images of samples D and G.
2. Band diagram calculation
Based on the obtained Sn composition, strain and layer thickness, the band diagram at 300 K was
calculated using the effective mass and matrix propagation method3,4. The strain-induced
bandgap change5 were considered for the calculations. The band offsets were obtained based on
well acknowledged theoretical calculation6. Figure S4 shows the schematic band structures of
the samples D and G (not to scale). The EcL, EcΓ, Evhh, and Evlh represent energy levels of L- and
Γ-valleys at conduction band (CB), and heavy hole (hh) and light hole (lh) at valence band (VB),
respectively. For sample D, the 1st GeSn layer is indirect bandgap due to residual compressive
strain while the 2nd GeSn layer is direct bandgap. Since the Sn composition of the 1st GeSn layer
is lower relative to the 2nd GeSn layer, the formation of energy barriers at both CB and VB leads
to photo-generated carriers confined in the 2nd GeSn layer where the band-to-band recombination
(either PL or lasing) occurs. The direct bandgap energy of 0.476 eV agrees well with the
measured PL peak position of 2610 nm. For sample G, all three GeSn layers feature direct
bandgap, with Eg3<Eg2<Eg1 (Egn is bandgap energy of nth GeSn layer). The observed PL peak at
3225 nm is consistent with the calculated bandgap energy of the 3rd GeSn layer at 0.385 eV,
indicating the excellent carrier confinement in the 3rd GeSn layer. Based on our calculation
results, all samples feature type-I band alignment with the carriers confined in the top GeSn
layer. The PL measurements confirmed that the observed emission wavelengths match the
24
bandgap energies of the top GeSn layers. The bandgap energy calculations are summarized in
Table S1.
3. Bandgap characteristic analysis
The temperature-dependent PL measurements were performed on each sample. We analyzed the
bandgap characteristic based on a systematic study of the PL spectra and then draw the
conclusion of the material bandgap directness. Figure S5 shows the temperature-dependent
normalized integrated PL intensity of each sample. For sample A, as temperature decreases from
300 to 150 K, the integrated PL intensity decreases due to the reduced number of carriers
populating on Γ valley. Below 150 K the decreased non-radiative recombination velocity
overcompensates the reduced number of thermal activated carriers, resulting in the increased
integrated PL intensity at temperatures from 150 to 10 K. Since the bandgap theoretical
calculation indicates that there is almost no energy difference between the Γ and L valleys,
therefore, the bandgap of sample A is at the indirect-to-direct transition point. For samples B, C,
and D, the bandgap theoretical calculation indicates that their Γ valleys are lower than L valleys.
As the temperature decreases, the integrated PL intensity monotonically increases. The increases
of 6-, 2-, and 4-times were observed for samples B, C, and D, respectively. For samples E, F,
and G, whose Sn compositions are far beyond the theoretical predicted indirect-to-direct
transition point, their integrated PL intensity significantly increased at lower temperature. The
increases of 65-, 24-, and 25-times were observed for samples E, F, and G, respectively, which is
attributed to the further lowered Γ valley for dominant direct bandgap transition. The bandgap
energy separation between Γ and L valleys increases as the Sn composition increases, which is a
typical direct bandgap material behavior.
25
Note that the 65-times PL intensity increase at low temperature was observed for sample E,
which is the highest value among all samples. However, based on material characterization,
sample E features relative lower material quality. This can be explained as following: due to the
lower material quality of sample E, the PL intensity at room temperature is weak, resulting in a
larger ratio of low and high temperature PL intensities.
4. Surface profile characterization
To investigate the surface roughness, the atomic-force microscopy (AFM) characterizations have
been performed on as-grown samples and post-etch samples. Note that for the measurements of
post-etch samples, the scan area was on the etched surface not on sidewall since it is very
difficult to scan the sloped surface. The validity of this measurement method was indicated by
SEM image (Fig. S6) which showed that their surface profiles are very close. The results are
summarized in Table S2. (Note, the etched sample G was broken during the measurement
therefore the data currently is not available. However, based on the available data, a clear
conclusion could be drawn.)
Based on the obtained data, the surface roughness is partially due to the initial material growth
and strain release. For samples A, B, and E, the wet etching also adds additional roughness.
While for other samples, either roughness does not change or even reduces after etching.
According to the reported data of surface roughness7, the measured surface roughness in this
work is with comparable value.
We have estimated surface roughness related loss to be ~10 dB/cm based on the scattering loss
study for Si waveguide operating at 1.55 µm with similar roughness8. Since our GeSn lasers
operate at longer wavelength, the actual waveguide loss could be lower than this value. The loss
is at reasonable value for early F-P cavity lasers.
26
5. Lasing mode pattern calculation
Figure S6(a) shows the pattern of the fundamental transverse electric (TE0) mode obtained using
a 2D mode solver9. The cross-section of the layout was consistent with the fabricated device,
i.e., the top and bottom width of the ridge waveguide were 2 and 5 μm, respectively, and the etch
depth was 800 nm. The calculations were done for a layer structure corresponding to sample D.
The refractive index (n) of GeSn was obtained from ref. 10. Since the n of Ge0.9Sn0.1 is very
close to that of Ge0.87Sn0.13, an identical n of 4.25 was used for the entire GeSn layer. Mode
overlap with the GeSn and the Ge layer of 85.2% and 14.4% respectively were obtained,
revealing the superior optical confinement in the GeSn layer. In comparison, the waveguide with
the same layout except the 90o sidewall was simulated as well. Under the same configuration of
n, a slightly increased mode overlap with GeSn of 85.9% was obtained, as shown in Fig. S6(b).
This indicates that as long as the smooth surface was achieved, the deterioration of device
performance due to sloped sidewall can be ignored in this work.
6. General characterization of GeSn laser grown on Si
The laser-output versus pumping-laser-input (L-L) curves for all lasers operating at 77 K are
shown in Fig. S7(a). The clear threshold feature was observed for each curve, confirming the
lasing characteristic.
Figures S7(b1)-(b4) show the characteristic temperatures (T0) of samples B, C, D, and F. The T0
was obtained by the linear fitting using equation ln (Ith) ∝ (T/T0), where T and Ith are temperature
and corresponding threshold, respectively.
The major efforts towards further improving the GeSn double heterostructure (DHS) laser
performance in terms of higher operating temperature and lower threshold will be the
optimization of the ridge waveguide structure to achieve single-mode operation, and the
27
fabrication of a thicker, defect-free GeSn top layer to maximize the mode overlap with it.
Moreover, the material growth study revealed that there is still room to further improve the
material quality by optimizing the growth conditions.
7. References
1. Ghetmiri, S. et al. Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence.
Appl. Phys. Lett. 105, 151109 (2014).
2. Ryu, M. et al. Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si,
indicating possible indirect-to-direct bandgap transition at lower Sn content. Appl. Phys. Lett.
102, 171908 (2013).
3. Chang, G. et al. Strain-Balanced GezSn1-z−SixGeySn1-x-y Multiple-Quantum-Well Lasers.
IEEE J. Quant. Electron. 46, 1813 (2010).
4. Jaros, M. Simple analytic model for heterojunction band offsets. Phys. Rev. B, Condens.
Matter. 37, 7112 (1988).
5. Menéndez, J. et al. Type-I Ge/Ge1-x-ySixSnyGe∕Ge1-x-ySixSny strained-layer heterostructures
with a direct GeGe bandgap. Appl. Phys. Lett. 85, 1175 (2004).
6. Sun, G., Soref, R., & Cheng, H. H. Design of an electrically pumped SiGeSn/GeSn/SiGeSn
double-heterostructure mid infrared laser. J. Appl. Phys. 108, 033107 (2010).
7. Wirths, S. et al. Reduced Pressure CVD Growth of Ge and Ge1−xSnx Alloys. ECS J. Solid
State Sci. Technol., 2 N99 (2013).
8. Lee, K. et al. Fabrication of ultralow-loss Si/SiO2 waveguides by roughness reduction. Opt.
Lett. 26, 1888 (2001).
28
9. Fallahkhair, A. et al. Vector Finite Difference Modesolver for Anisotropic Dielectric
Waveguides. J. Lightwave Technol. 26, 1423 (2008).
10. Tran, H. et al. Systematic study of Ge1-xSnx absorption coefficient and refractive index for
the device applications of Si-based optoelectronics. J. Appl. Phys. 119, 103106 (2016).
Figures
Fig. S1 Fitting process of 2θ-ω scan for samples (a) D and (b) G. The multiple peaks are clearly
resolved, indicating the existence of multiple GeSn layers with different Sn compositions.
29
Fig. S2 XRD-RSM of each sample shows the in-plane (a∥) and out-of-plane (a⊥) lattice constants as well as the strain.
The broadened contour plot of GeSn indicates the multi-layer feature of the GeSn.
30
Fig. S3 TEM images of samples (a) D and (b) G. Each layer can be clearly resolved. The top
GeSn layers feature low-density TD.
Fig. S4 Band diagram calculation for samples (a) D and (b) G at 300 K (not to scale).
31
Fig. S5 Temperature-dependent normalized integrated PL intensity of each sample showing the
typical direct bandgap material characteristics. Inset: Details of sample A.
Fig. S6 SEM images of the laser device showing the sidewall of the waveguide.
32
Fig. S7 Calculated pattern of the fundamental transverse electric mode for (a) actual device and
(b) ideal ridge waveguide with 90o sidewall. The Neff is the effective index. The mode overlap
difference with the GeSn layer is only 0.7% between the two structures.
Fig. S8 (a) L-L curves of GeSn lasers at 77 K. (b1)-(b4) Fitted T0 of GeSn lasers.
33
Tables
Table S1. Summary of bandgap energy for each GeSn layer
A
B
C
D
E
F
G
Eg1 (eV)
0.595
0.537
0.536
0.538
0.464
0.541
0.495
Eg2 (eV)
0.566
0.490
0.489
0.476
0.390
0.484
0.425
Eg3 (eV)
0.408
0.385
Table S2 Summary of surface roughness (unit: nm)
Sample
A
B
C
D
E
F
G
As-grown
roughness
Post-etch
roughness
3.75
3.94
9.12
10.30
5.08
18.00
9.34
6.27
10.40
7.17
10.60
13.70
6.03
N.A.
34
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"physics.app-ph",
"cond-mat.mtrl-sci"
] | In this article the Wells-Dawson polyoxometalate K6[P2W18O62] is grown as an interfacial layer between indium tin oxide and bulk heterojunction of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The structure of the POM layers depends on the thickness and shows a highly anisotropic surface organization. The films have been characterized by atomic force microscopy and X-ray photoelectron spectroscopy (XPS) to gain insight into their macroscopic organization and better understand their electronic properties. Then, they were put at the anodic interface of a P3HT:PCBM organic solar cell and characterized on an optical bench. The photovoltaic efficiency is discussed in terms of the benefit of the polyoxometalate at the anodic interface of an organic photovoltaic cell. | physics.app-ph | physics | Enhancement of photovoltaic efficiency by insertion
of a polyoxometalate layer at the anode of an organic
solar cell†
M. Alaaeddine,a,b Q. Zhu, a,b D. Fichou,a,c G. Izzet,a,c J. E. Rault, d N. Barrett,e A.
Proust*a and L. Tortech*a,b
In this article the Wells-Dawson polyoxometalate K6[P2W18O62] is grown as an interfacial
layer between indium tin oxide and bulk heterojunction of poly(3 -hexylthiophene) (P3HT) and
[6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The structure of the POM layers depends
on the thickness and shows a highly anisotropic surface organization. The films have been
characterized by atomic force microscopy and X-ray photoelectron spectroscopy (XPS) to gain
insight into their macroscopic organization and better understand their electronic properties.
Then, they were put at the anodic interface of a P3HT:PCBM organic solar cell and
characterized on an optical bench. The photovoltaic efficiency is discussed in terms of the
benefit of the polyoxometalate at the anodic interface of an organic photovoltaic cell .
Introduction
or
effect
of LiF
as ECL
Low cost-fabrication, scalability, light weight and flexibility
have driven the development of Organic PhotoVoltaics (OPV) 1
with Power Conversion Efficiency (PCE) values competitive 2
to those of Dye Sensitized Solar Cells. However, improving the
performance of the donor-acceptor photoactive heterojunctions
is still an intensive research area.3–6 Much effort is also devoted
to a better understanding of the role of interlayer materials.
Interfacial layers (IFL) can be used to tune the band alignment,
enhance the built-in electric field, improve the morphology of
the organic film and lower interfacial charge recombination
through favorable physical and electrical electrode/polymer
contacts.7–11 Many materials have been tested in a conventional
device configuration either as electron collecting layer (ECL) at
the cathode or hole collecting layer (HCL) at the anode. The
beneficial
Poly(3,4-
ethylenedioxythiophene) Polystyrene sulfonate (PEDOT:PSS)
as anodic HCL is, for example, commonly recognized.
However, PEDOT:PSS is also corrosive for the Indium tin
oxide (ITO) anode, with detrimental effects on the long-term
stability of the solar cell. To avoid these phenomena, inverted
being investigated 12–14.
structured solar cells are now
Recently, oxides like V2O5, MoO3, WO3 and NiO have been
successfully introduced as HCL, while TiOx and ZnO have
rather been placed at the cathode as ECL.15,16 Oxides are
attractive because of their low cost, visible light transparency,
mechanical and electrical robustness, potentially high charge
carrier mobility, and low environmental impact.17
Among molecular oxides, polyoxometalates (POMs) have
outstanding
tunable electronic
properties.18 However, their potential for solar cell applications
has been explored almost exclusively in the liquid phase. 19–22 In
the [SiW12O40]4- modified zinc oxide photoanode built on ITO,
operating in a conventional electrochemical cell in the presence
-/I- electrolyte, the POM is incorporated as an electron
of the I3
acceptor to limit charge recombination.23 Two examples report
on the implementation of [PW12O40]3- (PW12) in solid-state
devices for optoelectronics: as an electron injection layer in a
structural diversity and
is
the
influence of
solution on methylated
Hybrid Organic Light Emitted Diode,24 or as an ECL in a
conventional
ITO/PEDOT-PSS/P3HT:PCBM-61/PW12/Al
polymer solar cell.25 In both cases, enhanced efficiency was
attributed to the energy level alignment at the electrode.
One parameter seldom studied
the
morphology at the interface on the electrical properties,
although the possibility for easy nanostructuration of ZnO and
the resulting minimization of surface defects has been
discussed.14,26,27 In view of using POMs in OPV, this issue is all
the more essential since processing
is still non-trivial,
dominated by electrostatic
layer-by-layer assemblies or
polymer embedding.28,29 Spontaneous adsorption of POMs on
Ag, Au, glassy carbon or HOPG electrodes is well known 30–33
but has not been reported on ITO. On the other hand, drop
casting of hybrid-POM
and
hydroxylated silicon surfaces has led to a wide variety of
architectures imaged by scanning force microscopy. 34 This
prompted us to
investigate the spin coating growth of
K6[P2W18O62] (hereafter noted K6-P2W18) on ITO. The
dependence of the thickness on the structuration of the film will
be discussed.
Surfaces were characterized by atomic force microscopy
(AFM) and their electrical properties measured using the
current sensing mode. Subsequently, the electronic structure of
the highly structured layer has been determined by X-ray
photoelectron
and Ultra-violet
Photoemission spectroscopy (UPS). Finally, the K6-P2W18 IFL
was
poly(3-
hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid
methyl ester (PCBM) of an organic photovoltaic device. Its
opto-electrical properties have been characterized.
Materials and methods.
heterojunction with
spectroscopy
introduced
(XPS)
in
an
K6[P2W18O62] was prepared according to the accepted literature
procedure35. Its molecular structure is depicted in the schematic
of Fig. 1a.
respectively and the bias was applied to the ITO. The photo-
electrical characterization of OSC was performed using a
Xenon lamp, with a AMG1.5 filter calibrated at 75 mW/cm².
The XPS measurements were performed in an ultra-high
(base pressure 2x10-10 mbar) using a
vacuum system
monochromatic Al Kα X-ray source (1486.7 eV) and a
SPHERA-Argus analyzer (both from Oxford Instruments
Omicron Nanoscience). The overall energy resolution was
better than 0.5 eV. The UPS measurements were made using an
HIS-13 He I source (21.2 eV, also Oxford Instruments Omicron
Nanoscience).
Results and discussion.
Morphological studies.
The 40 nm POM film surface presented multiple spherulites with a
lateral size between 500 nm and 1.5 µm (see Fig. 2a). Inspection of
the AFM image shows the typical radial structure associated with
spherulites. At this point, crystallization of the clusters has already
started, however, the spherulites are still small and quite irregular
with empty spaces between the domains. The line profile shown in
Fig. 2b reveals grain heights up to 20 nm with an average value of
10 nm and the rms roughness is 5 nm. CS-AFM at an applied bias
voltage of -500 mV showed a fully insulating behavior. At 100 nm,
the size and the aspect of the spherulites became more regular and
nearly constant (See Fig. 2c). The crystals are bigger (1µmx2µm)
and have pentagonal or hexagonal forms, the growth is radial from a
germination point (see profile line Fig. 2.d). The 3.9 nm rms
roughness was smaller than that of thinner films and the grain
boundaries were limited by the steric constraint. At the center of
each spherulite a germination grain was clearly apparent from which
the crystal grew radially (See Fig. 2c). At this stage of film growth,
2D steric effects reached a maximum. The surface was fully covered.
The surface morphology of the 150 nm thick film changes
dramatically. The spherulites have disappeared and the surface is
fully covered by highly anisotropic ordered columns structured into
domains, Fig. 2e. Within the domains a tubular organization was
observed in two, orthogonal directions. The surface roughness was
3.7 nm. From the AFM line profiles shown in Fig. 2f, the column
lengths reached a maximum of 3.4 µm, the maximum height was 6.6
nm and the width 100 (+/-10) nm. Line profiles give direct access to
the surface
for a more quantitative
measurement a 1D autocorrelation (formula 1) was performed. This
analysis provided critical values for the height and the width of the
columns (See Fig. 2g) which can be related to the size of K6-P2W18.
The resulting calculations gave ΔHx, the typical average height on
the surface,
topography, however,
>
𝟐
(1)
∆𝑯𝒙 = √< (𝒉(𝒙 + ∆𝒙) − 𝒉(𝒙))
where h is the height at the x position. The characteristic height
was 2.1 nm which is the minimum height measured on the
profile line (X1) in Fig. 2f. The width as estimated by the
autocorrelation analysis was 48 nm, compatible with 32
elementary units assuming that the spacing between two units is
around 3 Å36 and that the POMs lie flat on the surface
(32*(1.2+0.3)=48 nm). The cross section of the column read
from the profile line is hence composed of 64 K 6-P2W18.
Figure 1: a) structure of the Wells- Dawson K6[P2W18O62]; b)
Schematic of the photovoltaic cell
The POM films were grown onto a layer of indium tin oxide
coated glass slide (75 Ω/sq, Sigma-Aldrich) in a glove box by
spin coating in solution in dimethylsulfoxide (100 mg/mL) and
annealed during 30 minutes at 140°C. The results for three
layer thicknesses (40, 100 and 150 nm) are presented here.
POM-based organic solar cells (OSC) were prepared using
regioregular poly (3-hexylthiophene) (P3HT), [6,6]-Phenyl C61
butyric acid methyl ester (purity 99.5%, PCBM), poly(3,4-
ethylenedioxythiophene)-poly(styrenesulfonate) (1.3 wt% in
water, PEDOT:PSS), and lithium fluoride (assay 99.99%, LiF),
all supplied by Sigma-Aldrich. The organic compound of OSC
was deposited by spin coating, LiF and Al were deposited by
thermal evaporation under high vacuum (P=10-6 mbar) at rates
of 0.01Å/s for LiF and 0.5Å/s for Al. With reference to the
stack schematic in Fig. 1b the photovoltaic cells were prepared
following the sequence: 1/ deposition of K6-P2W18 (150 nm), 2/
spin coating of a mixture of P3HT:PCBM (respectively 15
mg/mL and 12 mg/mL in chlorobenzene), 3/ deposition of 7Å
of LiF and finally 4/ deposition of the counter electrode of Al
(100 nm). The process of layer deposition was performed under
controlled nitrogen atmosphere. The layers were characterized
by AFM on a Molecular Imaging from (Agilent, PicoLE),
either in contact mode and current sensing mode (CS-AFM)
with Pt/Ir tip (k=0.2N/m, radius = 20nm), the indentation force
and surface contact were estimated at 20nN and 120 nm²,
b)
d)
f)
a)
c)
e)
g)
Figure 2: atomic force microscopic images of thin layers of K 6[P2W18O62]; the black line inside the AFM images represents the
location of the profile line on the right (a) for a thickness of 40nm the first steps of crystallization are observed, (b) profile of
image (a) showing that the surface is rough, the grains are irregular and the grains boundaries are thick; (c), for a thickness of
100nm: the 2D growth crystal has reached a maximum limited by the steric constrain, the shapes of the crystal are regular and a
germination grain at the center of the spherulite is present, (d) profile line of (c); (e) for 150nm film, the surface is composed of
domains in which highly ordered columns oriented at 90° are present, (f) profile line of image (e) the columns clearly have
characteristic parameters of wideness L1 an height X1. Those parameters were revealed by doing an auto-correlation analysis (g).
6420Height, nm1.20.80.40.0Lateral position, µm12840Height, nm1612840Height, nmGermination grainGrains boundariesX12*X13*X12*L12*L1L1L12.52.01.51.0H, nm23456780.1234567812X, nmCharacteristic heightCharacteristic cross section1086420µm1086420µm2520151050Height, nm1086420µm1086420µm2520151050Height, nm1086420µm1086420µm100806040200Height, nm Local electrical properties.
The topography and the electrical behavior of the 150 nm film
have been investigated by conductive AFM. At positive bias the
surface was insulating. However, at -500 mV applied bias, and
contrary to the 40 nm film, the surface became conductive, as
shown in Fig. 3. Comparison of the topography with the
electrical mapping indicates that the conductive pathways were
mainly on top of the columns (Figure 3b and 3d). It is
interesting to note the bright area seen at the center of the
surface, Fig. 3c and 3d, was highly conductive. Thick layers of
semiconductors (organic and/or inorganic), are known to have
high resistivity (and/or poor conductivity). Only thin layers or
highly crystalline structures show good electrical conductivity.
Thus the conductivity of the 150 nm thick layer suggests that
the bulk of the film is well-ordered and the bright area in the
center of the images has a very high surface crystallinity.
Figure 3: Topographic and current mapping at -500 mV applied bias on the 150 nm thick layer of K6[P2W18O62]; (a) Topography and (b)
current mapping 20*20µm²; (c) Topography and (d) current mapping 7*7µm²
In addition to electrical mapping, local spectroscopy was performed
to characterize the electronic structure of the layer (see Fig. 4b). The
local I-V characteristics show a typical rectifying behavior. The
current flow at negative bias shows a series of steps at -0.7 V and -
1.0 V. At positive bias the I-V response is typical of a Schottky
contact with a current flow beginning between 0.5 and 1.0 V with a
current ratio at 1.5V calculated at 17. Due to empty d-levels, POMs
are generally considered as electron acceptors. However, the current
versus applied bias (I-V) measurements performed by CS-AFM
demonstrated a high hole carrier mobility to ITO. Indeed, in the
setup, at negative bias the electron injection was from ITO through
the POM layer to the tip, thus ascribing a hole conducting behavior
to POM layer. There might be a succession of discrete electronic
states which progressively become more accessible as the magnitude
of the negative bias is increased. On the contrary, there was low
current at positive bias, the system blocked electron flow from the
tip through the POM layer to ITO.
From the topographical and electrical mapping, it appears that the
column-like structure in the domains reflects a well-ordered bulk
structure as well as a highly-structured surface. Only ordering of the
layer at the surface and in the bulk allows good electrical behavior
(see Fig. ESI.1) Despite the thickness of the K6-P2W18 layer, the
surface was still conductive at low bias.
Figure 5: By using XPS and UPS we are able to obtain (a) the
energy diagram of a 150 nm thick, well-structured layer of K6-P2W18
onto ITO. The measurements gives the position of the maximum
valence band at 3.1 eV below the Fermi level and show the presence
of a broad gap state just below the Fermi level at 0.7 eV. The work
function of AFM tip (Pt/Ir) was given by the literature41; red and
green colors were used to evidence the change of intensity scale to
highlight the gap state b) XPS W4f core-level spectrum showing a
single component with 4f7/2 (4f5/2) binding energy of 35.7 (37.9) eV
The VBM is 3.10 eV below the Fermi level of ITO. The signal
visible just below the Fermi level might be due to photoelectrons
emitted from the ITO substrate through the pores of the molecules,
however, the film thickness and the absence of clear holes in the CS-
AFM images suggests that the intensity is rather due to metallic like
states localized in energy. The optical gap of the POM has been
measured at 4.5 eV which allows us to locate the conduction band
minimum at 3.64 eV (see Figure 5a), more typical of an n-type
semiconductor.
The conducting behavior of the present POM layer is probably due
to the presence of this intermediate energy level in the gap. Without
the presence of these gap-states the POM layer would be fully
resistive. This upholds the conductivity (current mapping) and the
electronic response (local spectroscopy).
Figure 4: local I vs V spectroscopy using AFM (a) topographic
surface with tips localization (b) spectroscopy
To better understand
this behavior, X-ray and ultra-violet
spectroscopy photoemission experiments were conducted
to
determine the electronic structure of the layer, the oxidation state of
the POMs and the band alignment.
Electronic structure
the
threshold of
The work function of a metallic sample surface can be directly
obtained by measuring
the photoemission
spectrum37,38, i.e. the energy at which photoelectrons can escape
from the material, measured with respect to the sample Fermi level.
Figure ESI.2 shows the photoemission threshold of a thick, well-
organized film of K6-P2W18, as measured by UPS. Fitting the rising
edge of the threshold by using an error function39,40 gives a work
function of 5.04 (0.020 eV) for the K6-P2W18 layer. The work
function of bare ITO has been measured at 4.88 eV (not shown).
Figure ESI.3 shows the valence band spectrum of a 150 nm thick
layer of K6-P2W18. The spectrum was acquired using XPS because
the high photon energy reduces the contribution of secondary
electron tail to the valence band emission allowing a clearer view of
the valence band maximum (VBM) and localized states in the band
gap. Figure 5a shows the energy band diagram for ITO and a K6-
P2W18 layer as deduced from the UPS measurements of the work
functions and the XPS characterization of the valence band.
201612840µm201612840µm3210µm43210µma)-150-100-500Current, pA-1.5-1.0-0.50.00.51.01.5Applied Bias, Vb) between 2 columns (black tip) on top of a column (red tip) on top of a column (green tip)Intensity (a.u.)4038363432Binding Energy (eV)currentpeak35.737.9 The question then is whether these in gap states are intrinsic to the
POM or come from, for example, some adventitious reduction of the
W, resulting in doping16.
To get more insight into the electronic state of the POMs in the
layer, we have measured core-level spectrum of the POM. The W
4f7/2 and 4f5/2 binding energies were 35.7 eV and 37.9 eV
respectively, in agreement with previous values for W6+ (see Fig.
5b). The core-level spectrum does not show any evidence for a
second component which might be attributed to W5+, excluding the
possibility of significant reduction of the W6+ 15 and adventitious
doping.
Local spectroscopy suggests hole carrier conduction mechanism in
the K6-P2W18 layer, whereas the band alignment as measured by
UPS and XPS is closer to an n-type electronic structure. This might
suggest that the gap states are not fully populated allowing hole
migration. This original behavior has been confirmed by the
photovoltaic measurements.
Photovoltaic response
The photovoltaic response of OSC with an active layer of
P3HT:PCBM and a 150 nm K6-P2W18 IFL (see Fig. 1b) is presented
in Fig. 6a. Figure 6b is a schematic of the expected band alignment
in the stack, based on the known energy levels for the active layer
and the energy diagram of Fig. 5. The photovoltaic cell has reached
2.6% of power conversion efficiency (PCE) using a solar simulator
calibrated at 75 mW (Fig. 6a). The open circuit voltage and the fill
factor are 440 mV and 42.5%, respectively. Moreover the I-V
characteristic gives a very low series resistance of 15 Ω.cm-² which
contributes to the good fill factor value. It also suggests that K6-
P2W18 layer is conductive enough to drain charges from ITO to the
active layer. The current density was 10.3 mA/cm². These results
were compared to a reference cell using PEDOT:PSS as interfacial
layer prepared in the same conditions and which showed a lower
PCE at 1.5% (See Figure ESI.4).
The presence of discrete energy states in the gap, shown by both CS-
AFM local spectroscopy and the UPS/XPS experiments, seems
therefore to provide the channel for charge transport from the P3HT
to ITO through the K6-P2W18 layer.
Figure 6: a) I vs V under 75 mW and b) full energy diagram
Conclusions
Highly structured films of K6-P2W18 on ITO were grown by spin-
coating. The crystallization depends on the thermal annealing
treatment and the film thickness. Well-ordered surface organization
with anisotropic columns at 90° inside micrometric sized domains is
obtained for films thicker than 150 nm. Electrical mapping reveals a
conductive behavior for such layers whereas thinner layers are
insulating. Local spectroscopy and UPS/XPS measurements suggest
the presence of a discrete in-gap states which may facilitate charge
transport. Both results point to a hole conducting behavior.
An organic P3HT:PCBM photovoltaic cell with a thick film of K6-
P2W18 at the anodic interface with ITO was compared to a reference
with a PEDOT:PSS IFL. The cell shows a better efficiency (2.6 vs
1.5%), with excellent current density and good fill factor, and an
optimized open circuit voltage. To gain more insight into the nature
of the electronic states inside the band gap of the K6-P2W18 layer, we
are currently investigating other polyoxometalates of interest.
Additionally, we will build working field effect transistor device to
quantify the charge carrier selectivity and mobility.
Acknowledgements
The authors would like to thanks the région Ile de France and the
DIM Nano-K for funding the PhD grant to Qirong Zhu; J.E.R. was
funded by CEA Ph.D. grants and by the Labex PALM APTCOM
project
Notes and references
a Sorbonne Universités, UPMC Univ Paris 06, CNRS UMR 8232, Institut
Parisien de Chimie Moléculaire, F-75005 Paris, France. Fax:+33 1 44 27
38 41; Tel:+33144273034; E-mail : [email protected]; e-mail :
[email protected]
b CEA Saclay, IRAMIS, NIMBE, LICSEN, F-91191 Gif-sur-Yvette,
France.
c CNRS, UMR 8232, Institut Parisien de Chimie Moléculaire, F-75005,
Paris, France
d Synchrotron-SOLEIL, BP 48, Saint-Aubin, F91192, Gif sur Yvette
CEDEX, France.
e CEA Saclay, IRAMIS, SPEC, LENSIS, F-91191 Gif-sur-Yvette,
France.
†Electronic Supplementary
Information
(ESI)
available: Local
spectroscopy for different K6[P2W18O62] layers, Spectrum of the threshold
of photoemission, XPS binding energy in function of energy for a thick
layer of K6[P2W18O62] and I/V curve for photovoltaic reference cell. See
DOI: 10.1039/b000000x/
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|
1912.07880 | 1 | 1912 | 2019-12-17T08:58:03 | A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect | [
"physics.app-ph",
"cond-mat.mtrl-sci"
] | Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS2 photodetectors function under the photogating effect originated from the charge-trap mechanism, which is difficult for quantitative control. Such devices generally suffer from a poor compromise between response speed and responsivity (R) and large dark current. Here, a dual-gated (DG) MoS2 phototransistor operating based on the interface coupling effect (ICE) is demonstrated. By simultaneously applying a negative top-gate voltage (VTG) and positive back-gate voltage (VBG) to the MoS2 channel, the photo-generated holes can be effectively trapped in the depleted region under TG. An ultrahigh R of ~1E5 A/W and detectivity (D*) of ~1E14 Jones have been achieved in several devices with different thickness under Pin of 53 uW/cm2 at VTG=-5 V. Moreover, the response time of the DG phototransistor can also be modulated based on the ICE. Based on these systematic measurements of MoS2 DG phototransistors, the results show that the ICE plays an important role in the modulation of photoelectric performances. Our results also pave the way for the future optoelectrical application of 2D TMDs materials and prompt for further investigation in the DG structured phototransistors. | physics.app-ph | physics | A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect
Fuyou Liao, Jianan Deng, Xinyu Chen, Yin Wang, Xinzhi Zhang, Jian Liu, Hao Zhu, Lin Chen,
Qingqing Sun, Weida Hu, Jianlu Wang, Jing Zhou, Peng Zhou, David Wei Zhang, Jing Wan*,
Wenzhong Bao*
Dr. Fuyou Liao, Dr. Xinyu Chen, Dr. Yin Wang, Xinzhi Zhang, Dr. Hao Zhu, Dr. Lin Chen,
Prof. Qinging Sun, Prof. Peng Zhou, Prof. David Wei Zhang, Prof. Wenzhong Bao*
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University,
Shanghai 200433, China
E-mail: [email protected]
Dr. Jianan Deng, Dr. Jian Liu, Prof. Jing Wan*
E-mail: [email protected]
State Key Laboratory of ASIC and System, School of Information Science and Technology,
Fudan University, Shanghai 200433, China
Dr. Weida Hu, Dr. Jianlu Wang, Dr. Jing Zhou,
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083,
China
Keywords: MoS2, phototransistors, photogating effect, interface coupling
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDs) based photodetectors have
shown great potential for the next generation optoelectronics. However, most of the reported
MoS2 photodetectors function under the photogating effect originated from the charge-trap
mechanism, which is difficult for quantitative control. Such devices generally suffer from a
poor compromise between response speed and responsivity (R) and large dark current. Here, a
dual-gated (DG) MoS2 phototransistor operating based on the interface coupling effect (ICE) is
demonstrated. By simultaneously applying a negative top-gate voltage (VTG) and positive back-
gate voltage (VBG) to the MoS2 channel, the photo-generated holes can be effectively trapped in
the depleted region under TG. An ultrahigh R of ~105 A/W and detectivity (D*) of ~1014 Jones
have been achieved in several devices with different thickness under Pin of 53 W/cm2 at VTG=-
5 V. Moreover, the response time of the DG phototransistor can also be modulated based on the
ICE. Based on these systematic measurements of MoS2 DG phototransistors, the results show
that the ICE plays an important role in the modulation of photoelectric performances. Our
results also pave the way for the future optoelectrical application of 2D TMDs materials and
prompt for further investigation in the DG structured phototransistors.
2D-TMDs have been rapidly developed in recent years and attracted tremendous research
attention in the field of photodetection due to their unique advantages, including broadband
response spectrum, tunable bandgap, mechanical flexibility and availability of wafer-scale
growth and processing.[1-4] Tremendous efforts have been dedicated to developing high-
performance 2D TMDs-based photodetectors for potential applications in optical imaging,
sensing and communications.[5-7] Among the big family of TMDs, MoS2 has been widely
studied owing to its unique properties. For example, it has a direct bandgap of 1.8 eV as a
single-layer and an indirect bandgap of 1.2 eV in a bulk form. [8, 9] Furthermore, it has been
reported that the single-layer MoS2 field-effect transistor (FET) has a boost of carrier mobility
when integrated with a high-k dielectric layer of HfO2.[10] A monolayer of MoS2 phototransistor
has shown a short response time (≈50 ms) and a higher photoresponsivity (R) (≈7.5 mA/W)
than those of graphene phototransistors.[11] The wavelength dependent R also varies with the
thickness of MoS2, exhibiting a wide spectral response range from ultraviolet to infrared.
Moreover, the transparent flexible properties are also intriguing towards novel applications such
as flexible and wearable electronic devices.[12, 13]
Conventional MoS2 phototransistor relies on the surface trap as photogate modulating the
channel current and threshold voltage (VTH).[14, 15] Thus, the performances of the device are
largely determined by the trap density and energy level. However, these traps are mainly formed
by the interface imperfect bond and defects, and thus it is difficult to precisely control their
density. This is also a well-known issue in Si-based transistors.[16] Besides, the interface traps
might cause persistent photoconductance (PPC) phenomenon, which result in a ultralong decay
time after the illumination is switched off.[17-20] Although MoS2 photodetectors already show
high responsivity, there is still plenty of room to improve it.[17, 20] It has been reported that R of
some MoS2 phototransistors can reach 103-104 A/W, which was achieved under extreme
conditions, and at the expense of large dark current,[20, 21] which limit the practical
photodetection applications. Some other approaches which have been reported to enhance the
photoresponse of MoS2 photodetectors. For example, Kufer et al.[22] fabricated a HfO2
encapsulated MoS2 photodetector that exhibits an R of ~104 A/W at VD=5 V. Huo et al.[23]
fabricated out-of-plane MoS2 p-n homojunction through chemical doping method and report R
of 7×104 A/W under an extremely low illumination power density (Pin) of 73 pW/cm2 at VD=10
V and VG=60 V. Wu et al.[24] developed a MoS2 photodetector fabricated on the Al2O3/ITO
/SiO2/Si substrate with an R of 2.7×104 A/W. However, these approaches still work by the
mechanism of photo-carriers trapped in surface states, and suffer from the shortcoming of poor
compromise between response speed and responsivity. A summary of figures-of-merit for
previous reported MoS2 based photodetectors is seen table S1. It is of great importance to
further explore other new detecting mechanisms to realize both high response speed and
responsivity based on MoS2 phototransistors.
In this work, in order to improve and control the R and response speed of the MoS2 based
photodetector simultaneously, a dual-gated (DG) architecture is utilized by integrating both top
and back metal gates with the high-k dielectric layer. Here, in our proposed DG MoS2
phototransistor, the back gate (BG) is positively biased in order to form an electron channel at
the back interface. Meanwhile, the local top gate (TG) is negatively biased. When the device is
under illumination, the photo-generated holes accumulate just beneath the TG. These
accumulated photo holes can effectively screen the electric field from the TG, and lead to a
boost of the drive current compared with that in dark condition. Such an interface coupling
effect (ICE) enables our device with outstanding photoelectric characteristics. The experimental
results show that this DG MoS2 phototransistor with a thickness between 2.5 and 6.5 nm yields
ultrahigh R of ~105 A/W and ultrahigh detectivity (D*) of ~1014 Jones under Pin of 53 W/cm2.
Furthermore, the responsivity R and response time trise or tfall can be efficiently tuned by VTG.
Our results indicated that the DG MoS2 phototransistor would be a great potential candidate for
the next-generation optoelectronic devices.
Figure 1a displays a three-dimensional (3D) schematic of DG MoS2 phototransistor on
Si/SiO2 substrate with two metal gates located on the top and bottom of the MoS2 layer,
respectively. The non-gated regions (underlap) for TG are engineered to keep a sufficient total
illumination reception area, which is critical to improving the light absorption efficiency. A
detailed device fabrication procedure is described in the Methods section. The optical
microscope of the device is shown in Figure 1b. The height profile and atomic force microscope
(AFM) image of the multilayer MoS2 are shown in Figure 1c. The thickness of MoS2 in this
device is measured by about 5.6 nm, suggesting an 8-layer MoS2 channel. It should be
mentioned here that we have fabricated a batch of DG MoS2 phototransistors with varied
thickness. Next, we measured the basic electrical characteristics of DG MoS2 phototransistor
under dark conditions. The output and transfer curves of BG mode (VTG=0 V) and TG mode
(VBG=0 V) of this device are measured, see Figure S1. The transfer characteristics are measured
by sweeping the VBG with different VTG from -5 to +3 V at a step of 1 V and VD=0.1 V, as shown
in Figure 1d. It is worth noting that negative VTG shifts the transfer curves toward a positive
direction, whereas for a positive VTG, the transfer curve hardly shifts in the opposite direction,
which indicates that negative VTG can effectively influence the channel current due to the global
BG and short local TG architecture in this device. The VTH value of the DG MoS2 FET with
different VTG is calculated by extrapolating the linear portion of ID-VBG curve to a zero drain
current point. It is found that the DG MoS2 FET has a large VTH modulation from -0.73 to 0.22
V when the VTG is changed from +3 to -5 V, which indicates a strong interface coupling between
the BG and TG.
To investigate the photoelectric characteristics of the DG MoS2 phototransistor, we
measured the transfer curves of the devices by sweeping VBG with different VTG under dark and
a Pin of 1.55 mW/cm2 (550 nm). As shown in Figure 2a, a negative VTG can greatly suppress
the dark current in the MoS2 phototransistor, and when the device biased at VD=1 V is
illuminated by a focused laser beam, the transfer curves shift negatively, which indicates an
obvious boost of the photocurrent due to the photogating effect. The corresponding output
curves with varied VTG are also measured (see Figure S2). For comparison the performance of
DG and BG MoS2 phototransistor based on the same process and bias condition, the same
measurement is performed on BG-FET (raw data see Figure S3). In order to quantitatively
compare the photogating effect in the DG MoS2 phototransistor under different VTG, the change
of VTH (VTH) is calculated by
. The result as shown in Figure 2b
indicates that the VTH increase from 0.1 to 0.5 V as VTG decreasing from +3 to -6 V, and the
VTH of BG-FET is ~0.1 V, which means the photogating effect is stronger when VTG is more
negative. One of the most important figures of merit for phototransistor is R. According to
Figure 2a, R of the DG MoS2 phototransistor is calculated by
, where Iph is the
photocurrent, Pin is the illumination power density and A is the active area. Figure 2c shows the
variation of R as a function of VBG under different VTG biases at VD=1 V. For a fixed VTG, R rises
while VBG increases from a negative value to positive value, because increasing VBG not only
minTHTHilluationTHdarkVVVinphIRPA
enhances the ICE but also increases the transconductance (gm). R reaches the peak value and
then drops when the VBG continues increasing due to the decrease of gm, as R depends on gm
when the VTH is constant. The maximum R value (Rmax) increases as the VTG decreases from
+3 to -6 V. Rmax under varied VTG, as well as the corresponding D* are extracted and as shown
in Figure 2d. Assuming that noise from dark current is the major factor, D* can be calculated
by
, where A is the active area of the detector in a unit of cm2, e is the
electronic charge, ID is the dark current and R is the responsivity. The results clearly show that
Rmax is 4.2×104 A/W when VTG=-6 V and drops to 1.1×104 A/W when VTG increases to -1 V and
then remains nearly unchanged when VTG increases to +3 V, whereas the Rmax of BG-FET is
only 7×103 A/W. The D* dependence of VTG curve exhibits the same trend as the Rmax -VTG
relation curve. The maximum D* is 9.6×1012 Jones at VTG=-6 V and the minimum D* is 3.2
×1012 Jones when VTG =-1 V, which is much higher than the D* of BG-FET (9.42×1011 Jones).
The results demonstrate that the DG MoS2 phototransistor can achieve higher R and D* when
VTG becomes lower due to the ICE and much enhancement compare to those of BG-FET. A
detailed photoresponse characteristic of DG phototransistor with different MoS2 thickness
ranging from 1.6 to 8 nm are shown in Figure S4-7, these devices with a thickness between 2.5
and 6.5 nm show a strong ICE when applied negative VTG and positive VBG. The ultrahigh R
and D* values are superior to those of most reported devices, such as MoS2 photodetector
encapsulated by HfO2 (R=104 A/W, D*=7.7×1011 Jones)[22] and substrate-enhanced MoS2
photodetector (R=104 A/W, D*=6.4×1011 Jones).[25] It should be noted that D* of photodetectors
based on 2D materials can be extracted by two different methods, dark current or low frequency
noise measurement. To get a fast estimation of the detectivity, D* is often extracted by assuming
that the main noise is from the shot noise of the dark current as Sn=(2eIdark)1/2.[26-30] However,
this method neglects other noise components, such as 1/f noise which is typically seen in a
MOSFET-based phototransistor. In order to obtain a complete assessment of D*, low frequency
*2DADReI noise measurement is also used to extract the D* of our device as
, where B
is the bandwidth, and
the measured noise current of the device. [22]
As shown in Figure S8a, the device indeed shows 1/f noise, similar to other MOSFET
devices.[31-33] Figure S8b shows that the noise reduces as the VBG decreases due to the lower
drain current. This leads to an extracted D* up to 5×1011 Jones at VBG = 1.5 V, which is about 2
orders lower than that extracted directly from the dark current, see Figure S8c. This is mainly
due to the 1/f noise component which is not considered in the extraction by dark current. In
order to fairly compare our results with other publications, table S1 has compared our results
to other publications with D* extracted both from dark current and low frequency noise. We
have also labeled the published results with yellow background to denote D* extracted by low
frequency noise measurements. As can be seen from the comparison table, our device shows
very competent D* values from both dark current and low frequency noise measurement
The observed ICE of the DG MoS2 phototransistor can be explained by a simple schematic
illustration (Figure 2e-f). When the DG MoS2 phototransistor works in the condition of VBG>0
V and VTG ≥ 0 V, VTG just increases the electron concentration beneath the TG. Under
illumination, the absorption of photons generates electron-hole pairs and the holes are then
trapped in the localized states near the valence band edge, which is similar to that in the
conventional BG MoS2 phototransistor. In this case, the trapped holes induce more electrons
through electric field induction. Thus enhanced electron density lowers the total resistance of
the device, resulting in a larger current flow (Iph) so that the transfer curve is horizontally shifted
with respect to the dark transfer curve due to the trapped photoholes in the surface, as shown in
Figure 2e. However, when a negative VTG (VTG<0 V) is applied on the TG with VBG>0 V, the
electron channel under TG is depleted through the ICE, and thus reduces the ID flowing at the
*NABDRiNi back interface. As shown in Figure 2f, the light illumination generates extra holes that gather
close to the top interface due to VTG<0 V and screen the electrical field induced by VTG, thereby
diminishing the interface coupling, and consequently the electron current at the bottom interface
is recovered. The operation of the DG MoS2 phototransistor is also similar to that of an n-type
JFET. The hole layer or electron-depleted layer induced by VTG at the top interface functions as
the JFET gate controlling the bottom channel induced by VBG. The photogenerated holes
accumulating at the top interface increase the potential of the field-induces JFET's gate, which
is similar with applying a positive VBG to JFET that would increase the electron current in the
bottom channel. It should be noted that the MoS2 channel thickness of DG-FET needs to be in
an appropriate range to obtain a strong photoresponse enhancement when applying a negative
VTG. Because negative VTG can turn off a thin MoS2 FET which results in suppression of
photocurrent. In contrast, there is negligible ICE when the MoS2 channel is too thick, because
a negative VTG has little impact on the current at the bottom interface. This mechanism leads to
the phenomenon of obvious ICE in the DG phototransistors with MoS2 thickness from 2.5 to
6.5 nm, which will be further discussed below. Although the ICE has been reported in SOI
photodetector, [34] it is first reported in the DG MoS2 phototransistor. It is worth noting that there
are both ICE and states trap in the DG device with negative VTG, but the former plays a more
important role in the DG MoS2 phototransistor due to the strong top gate controllability.
We further investigate the dominant photocurrent generation mechanism of the DG MoS2
phototransistor under different incident light power densities. Figure 3a-b exhibits the linearly
scaled output curves and transfer curves with VTG=-5 V and Pin increasing from 0 to 1.55
mW/cm2. The transfer curves with VTG=0 and +3 V under the same condition are shown in
Figure S9. The corresponding output curves with varying VBG at VTG=-5, 0 and 3 V are shown
in Figure S10. It is clearly observed that the ID increases and VTH shifts negatively with an
increase of Pin, which behaves like a typical photogating effect. Under illumination with
negative VTG, the photo-generated holes accumulate in the region under TG are captured by the
TG electric filed. The accumulated holes thus screen the field from TG, leading to a recovery
of the ID. At the same time, the captured holes also act as an additional positive TG voltage to
tune the ID. Both factors cause an increase of electron concentration in the MoS2 channel, which
makes the channel more n-type. This corresponds to the transfer characteristics in which the
VTH moves negatively with increasing Pin. In order to compare the photogating effect originated
from such interface coupling and trap states in our device, we extracted the VTH as a function
of Pin under VTG = -5, 0 and +3 V, respectively, as shown in Figure 3c, and VTH of BG-FET is
also extracted for comparison. It clearly shows that VTH of DG-FET at VTG=-5 V is much
higher than that of VTG=0 and =3 V, and that of BG-FET, indicating that the interface coupling
mechanism is dominant against the trap-related photogating effect when applying VTG=-5 V to
the DG MoS2 device.
The dependence of Iph on Pin at different VBG is shown in Figure 3d. We found that Iph
increases linearly with Pin (
, α ≈ 1) at negative BG bias (VBG=-1.5 V), which indicates
that the photo-generated carriers are positively proportional to the total phonon flux, similar to
the mechanism of a photoconductive detector. However, as VBG increases and the MoS2 channel
is turned on, the correlation between Iph and Pin becomes sublinear (α≈0.3 at VBG=1.5 V), it
indicates that the interface coupling associated with the trap states plays a more important role.
On the other hand, under a low illumination power, most of the incident light can be absorbed
by the MoS2, while more is wasted when the Pin is high because of the light absorption
saturation. [35] Figure 3e shows the correlation of R and Pin under different VBG values, where R
phinIP reaches an ultrahigh value of 3.6×105 A/W at VD=1 V and VBG=1.5 V under illumination power
intensity of 53 W/cm2. The corresponding Pin dependence of R with different thickness of
MoS2 from 1.6 to 8 nm are also measured (see Figure S11 for details). In Figure 3f, the thickness
dependence of R and D* (VTG=-5 V, VD=1 V) under illumination of 53 W/cm2 and 1.55
mW/cm2 are both extracted, respectively. A large R in the order of 104 and 105 A/W can be
obtained and is nearly independent on the thickness between 2.5 and 6.5 nm. However, there is
a downward trend as the thickness of MoS2 is thinner than 2.5 nm or thicker than 6.5 nm. With
too thin film, the top photohole and bottom electron layers are very close, leading to high
recombination in the channel. This high carrier recombination degrades the responsivity. With
too thick MoS2 film, the ICE becomes weak and thus leading to degraded responsivity as well.
In addition, D* is extracted to be ~1013 and ~1014 Jones at the range of 1.6 to 8 nm, under Pin
of 1.55 mW/cm2 and 53 W/cm2, respectively, which demonstrates an excellent enhancement
of MoS2 phototransistor performance.
Figure 4a compares the normalized transient characteristics of the DG phototransistor with
the conventional single (back gated) BG phototransistor at VBG=-3 V based on the 5.6 nm MoS2
flake. The photocurrent of both devices increases when the illumination is turned on and
decreases after the illumination is turned off. The BG MoS2 phototransistor, like conventional
MoS2 phototransistor reported in the references, shows a slow Iph rise and a very slow Iph
decrease due to the PPC. This PPC phenomenon of MoS2 phototransistor was also previously
reported by several groups [18-20] and observed in other semiconductors. [36-38] In contrast, the
DG MoS2 phototransistor with negative VTG has much faster photoresponse than the BG
phototransistor due to the interface coupling mechanism, indicating the obvious advantage of
this device in response speed (raw data of photocurrent pulses of the DG device with various
VBG at fixed VTG of -5 V at 1.55 mW/cm2 see Figure S12). Figure 4b shows time-resolved Iph
under different values of Pin for the wavelength of 550 nm (left), and different wavelength with
Pin of ~1.55 mW/cm2 (right) at VBG=+2 V and VTG=-5 V. It is noteworthy that corresponding Iph
increases with the increase of Pin or with the decrease of wavelength. For example, the Iph
increasing from 4.1 to 14.7 A as the Pin changes from 82 W/cm2 to 1.55 mW/cm2 for the
wavelength of 532 nm at VD = 1 V. When the wavelength decreases from 650 to 350 nm, it leads
to an obvious increase of Iph from 5.6 to 35.4 A. A higher Pin or a shorter wavelength
corresponds to more photons or higher photon energies, hence more electron-hole pairs can be
generated and a larger Iph can be achieved. Figure 4c shows the time-resolved Iph for the DG
MoS2 phototransistor with VBG=+2 V, VTG=-4, -5 and -6 V, respectively. It is clear that when
VTG decreases from -4 to -6 V, the Iph increases from 13 to 16.5 A, which is consistent with
the above conclusion. Furthermore, the response speed of DG MoS2 phototransistor can be
tuned by different VTG, as shown in Figure 4d. The rise time (trise) is defined as the time for Iph
to increase from 10 to 90%, and vice versa for the fall time (tfall).[14] When VTG decreases from
-4 to -6 V, the trise decreases from 11.9 s to 8.3 s and tfall decreases from 76.2 s to 46.4 s. Thus,
it confirms that VTG plays an important role in modulating the response time, especially the tfall.
Although the response speed of MoS2 DG-FET is much faster than that of the BG-FET, it is
still not qualified for practical application. It can be explained that the charging and discharging
time of the top gate capacitor limits the further increase in speed. There are several methods to
further improve the response speed, such as applying a more negative VTG based on a stronger
ICE, reducing the top gate capacitance by shortening the front gate length and applying a
smaller VBG at the expense of R.
In summary, we have demonstrated a DG MoS2 phototransistor with ultrahigh R of ~105
A/W and ultrahigh D* of ~1014 Jones under Pin of 53 W/cm2 and a fixed gate voltage
combination (VBG=2 V, VTG=-5 V). It is found that the DG MoS2 phototransistor can achieve a
better compromise between response speed and responsivity than the conventional BG
phototransistor due to the ICE. By controlling the VTG, the responsivity and temporal response
can be effectively manipulated. The thickness-dependent photoresponsivity in DG MoS2
phototransistors has also been investigated and all devices exhibit ultrahigh R and D*. The DG
device architecture based on interface coupling provides a new route for improving the
performance of TMD based photodetectors.
Experimental Section
Device Fabrication: The device fabrication begins with patterning a local BG on a heavily
doped p-type Si substrate capping with a layer of 300-nm-thick thermal oxide. Dry and wet
etching is then carried out to etch a 40-nm-thick trench on SiO2, followed by deposition and
lift-off of Ti/Au (10 nm/30 nm) to fill the trench using E-beam evaporation. Next, a layer of 15
nm HfO2 is deposited by atomic layer deposition (ALD) at 180 ℃ to form the BG dielectric.
The multilayer MoS2 flakes are obtained by using the micromechanical exfoliation method,[39]
and then precisely transferred onto the top of the buried BG electrodes using a
polydimethylsiloxane (PDMS) stamp and customer designed aligner. Ti/Au (10 nm/ 40 nm)
electrodes are deposited to form source and drain contacts, and the channel length between the
contacts is 4 μm. Then 2 h high vacuum annealing is carried out at 200 oC to improve the metal-
MoS2 interface. Next, a 2-nm-thick Al2O3 layer is deposited as the seeding layer [40] for
subsequent ALD deposition of 15 nm HfO2 and 30 nm Au TG electrode.
Material and Device Characterizations: The thickness of MoS2 sheets were measured by
atomic force microscopy (AFM, Bruker Dimension Edge). The electrical characteristics of the
DG phototransistor were measured using a semiconductor analyzer (Agilent B1500A).
Optoelectronic measurement was performed using a xenon lamp as the light source. The white
light is filtered with a monochromator and then passes through an optical fiber to illuminate the
as-fabricated devices. A light intensity meter was used to calibrate the illumination intensity.
All measurements were carried out in air at room temperature.
Supporting Information
Supporting Information is available from the Wiley Online Library or from the author.
Acknowledgments
F. L. and J. D. contributed equally to this work. This work was supported by the National Key
Research and Development Program (2016YFA0203900), National Natural Science
Foundation of China (61904032), Shanghai Municipal Science and Technology Commission
(18JC1410300) and National Natural Science Foundation of China (61874154).
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Figure 1. A DG MoS2 phototransistor. a) 3D schematic figure of a DG MoS2 phototransistor.
b) Optical microscopy image of the DG MoS2 phototransistor. Inset: Optical microscopy image
of the multilayer MoS2 flake after transfer to the buried BG. The scale bar is 20 m. c)
Thickness scan along the red line across the boundary of the multilayer MoS2 flake. Inset: AFM
image of the multilayer MoS2 flake. d) Transfer characteristics of the DG MoS2 phototransistor
by sweeping VBG with VD=0.1 V and varied VTG under dark conditions.
Figure 2. Photoresponse characteristic of DG MoS2 phototransistor with different VTG. Pin is
1.55 mW/cm2 with a wavelength of 550 nm. a) Transfer characteristics of the devices by
sweeping VBG under varied VTG from -6 to +3 V at a step of 1 V under dark (dash line) and
illumination (solid line) condition. b) VTH shift under different VTG due to illumination. Blue
dash line is VTH of BG-FET. c) R as a function of VBG under different VTG. Blueline + square
symbol is R of BG-FET. d) The corresponding Rmax and D* as a function of VTG. e-f) Schematic
illustration of generated electron-hole pairs in the DG MoS2 phototransistor with positive (e)
and negative (f) VTG biases, respectively.
Figure 3. Pin dependence of the DG MoS2 phototransistor under the illumination of 550 nm
with VD=1 V and VTG=-5 V. a-b) Output curves and transfer curves for dark condition and
illumination with different Pin. c-e) The Pin dependence of VTH, Iph, and R, respectively. f) The
MoS2 thickness dependence of R and D* under the illumination of 53 W/cm2 (Solid sphere)
and 1.55 mW/cm2 (open circle).
Figure 4. Photoswitching characteristics of the DG MoS2 phototransistor. a) Normalized Iph of
DG and BG MoS2 phototransistor based on the same thickness flake and operating with the
same VBG of -3 V under the illumination of 1.55 mW/cm2 (550 nm). b) Time-resolved Iph for
the DG MoS2 phototransistor under different illumination power intensity (left) and different
wavelength (right) at VBG=+2 V and VTG=-5 V. c) Time-resolved Iph for the DG MoS2
phototransistor with VBG=+2 V, VTG=-4, -5 and -6 V, respectively (550 nm, 1.55 mW/cm2). d)
The rise (left) and fall (right) of the normalized Iph with varied VTG extracted from (c). All the
VD is 1 V.
A dual-gated multilayer MoS2 phototransistor is fabricated to demonstrate an interface coupling
effect (ICE) for optoelectronic applications. Various device performance parameters can be
modulated based on the ICE. An ultrahigh photoresponsivity of ~105 A/W and detectivity of
~1014 Jones have been achieved.
Photodetectors
Fuyou Liao, Jianan Deng, Xinyu Chen, Yin Wang, Xinzhi Zhang, Jian Liu, Hao Zhu, Lin Chen,
Qingqing Sun, Weida Hu, Jianlu Wang, Jing Zhou, Peng Zhou, David Wei Zhang, Jing Wan*,
Wenzhong Bao*
A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect
Copyright WILEY-VCH Verlag GmbH & Co. KGaA, 69469 Weinheim, Germany, 2018.
Supporting Information
A Dual-gate MoS2 Photodetector Based on Interface Coupling Effect
Fuyou Liao, Jianan Deng, Xinyu Chen, Yin Wang, Xinzhi Zhang, Jian Liu, Hao Zhu, Lin Chen,
Qingqing Sun, Weida Hu, Jianlu Wang, Jing Zhou, Peng Zhou, David Wei Zhang, Jing Wan*,
Wenzhong Bao*
Figure S1. (a) ID-VD curves with VTG=0 V and VBG ranging from -2 to +3 V (BG mode). (b) ID-
VD curves with VBG=0 V and VTG ranging from -5 to +3 V (TG mode). (c) The BG (black line)
and TG (red line) transfer curves of the DG MoS2 phototransistor with VD=0.1 V. The
measurement is in ambient air and in the dark.
Figure S2. (a) The ID-VD curves of the 5.6 nm MoS2 DG phototransistor with VBG=+2 V and
VTG ranging from -5 to +3 V in dark and under illumination. Pin is 1.55 mW/cm2 with a
wavelength of 550 nm. (b) The corresponding Iph is extracted from (a).
Figure S3. A 5.6 nm MoS2 bottom-gate phototransistor (a) and its corresponding optoelectronic
response (b-d) and photoswitching characteristics (e-g).
Figure S4. Photoresponse characteristic of a 1.6 nm MoS2 DG phototransistor with different
VTG. Pin is 1.55 mW/cm2 with a wavelength of 550 nm. (a) Transfer characteristics of the devices
by sweeping VBG under varied VTG from -5 to +3 V at a step of 1 V under dark (dash line) and
illumination (solid line) condition. (b) VTH shift under different VTG due to illumination. (c) R
as a function of VBG under different VTG. (d) The corresponding Rmax and D* as a function of
VTG.
Figure S5. Photoresponse characteristic of a 2.5 nm MoS2 DG phototransistor with different
VTG. Pin is 1.55 mW/cm2 with a wavelength of 550 nm. (a) Transfer characteristics of the devices
by sweeping VBG under varied VTG from -5 to +3 V at a step of 1 V under dark (dash line) and
illumination (solid line) condition. (b) VTH shift under different VTG due to illumination. (c) R
as a function of VBG under different VTG. (d) The corresponding Rmax and D* as a function of
VTG.
Figure S6. Photoresponse characteristic of a 4.3 nm MoS2 DG phototransistor with different
VTG. Pin is 1.55 mW/cm2 with a wavelength of 550 nm. (a) Transfer characteristics of the devices
by sweeping VBG under varied VTG from -5 to +3 V at a step of 1 V under dark (dash line) and
illumination (solid line) condition. (b) VTH shift under different VTG due to illumination. (c) R
as a function of VBG under different VTG. (d) The corresponding Rmax and D* as a function of
VTG.
Figure S7. Photoresponse characteristic of an 8 nm MoS2 DG phototransistor with different
VTG. Pin is 1.55 mW/cm2 with a wavelength of 550 nm. (a) Transfer characteristics of the devices
by sweeping VBG under varied VTG from -5 to +3 V at a step of 1 V under dark (dash line) and
illumination (solid line) condition. (b) VTH shift under different VTG due to illumination. (c) R
as a function of VBG under different VTG. (d) The corresponding Rmax and D* as a function of
VTG.
Figure S8. Noise analysis of a 2.5 nm MoS2 DG phototransistor at VTG=-3 V and VD=1 V. (a)
Noise power spectral density (S) for VBG=3, 2.5 and 2 V, respectively. (b) Noise current density
(Sn) extracted from (a) at the noise frequency of 1 and 10 Hz. (c) Responsivity R (black
line+black solid sphere) under illumination power density of 1.55 mW/cm2 (550 nm), the
measured detectivity D* by neglecting (blue dash line+blue open circle) and considering 1/f-
noise (blue line+blue solid sphere).
Figure S9. Transfer curves under dark and illumination conditions with different Pin at VTG=0
V (a) and VTG=+3 V (b).
Figure S10. Output curves with varying VBG under dark and illumination conditions and its
corresponding Iph-VD curves. (a-b) VTG=3 V, (c-d) VTG=0 V, (e-f) VTG=-5 V.
Figure S11. The Pin dependence of R in different thickness of MoS2 DG phototransistor. (a) 1.6
nm MoS2, (b) 2.5 nm MoS2, (c) 4.3 nm MoS2, (d) 6.5 nm MoS2, (e) 7 nm MoS2 and (f) 8 nm
MoS2.
Figure S12. Photocurrent pulses of the 5.6 nm MoS2 DG phototransistor measured at
1.55mW/cm2 and VTG=-5 V for various VBG.
Figure S13. The transfer curves of the 5.6 nm MoS2 DG phototransistor with VTG=-5 V under
dark and illumination of different wavelength (a) and its corresponding Iph as a function of
wavelength
Table S1 Figures-of-merit for MoS2 based photodetectors
Thickness
Measurement conditions
Responsivity
Detectivity
Response time
Ref.
L or nm
VD
(V)
VG(V)
Pin
(nm)
(mW/cm2)
R (A/W)
D*
(Jones)
r/f (ms)
2.5-6.5
1
VTG=-5 V,
550
5.3×10-2
7.7×105
1.9×1014
-/-
This
7.6×104
1.9×1013
8.3×103/4.6×104
work
7.5×10-3
8.8×102
2.2×103
3.5
6.2×103
5.7×102
2.7×104
5×1011
-
-
-
-
-
50/50
4×103/9×103
-/5×105
-/-
-/2×103
~1010
7×10-2/1×10-1
-
-/0.75×10-1
2.6×103
2.2×1012
~104
1.8
7.7×1012
5×108
6.3×10-5
4.2×108
1.8/2
-/1×104
300/360
-/20
0.2/1.7
-/-
-/-
-/-
4.2×10-2
3.5×103/6.7×103
-
-
4.5×109
-
-
-
0.55
343
56.5
104-105
59
65.2
10-3
99.9
5.07
0.03
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]
[15]
[16]
[17]
[18]
[19]
[20]
[21]
[22]
[23]
[24]
[25]
1.55
1.55
80 W
2.4×10-1
1.3×10-1
2×101
5×101
2×103
2.3
3.2
2.5×10-3
-
5×101
1×102
2
5.8
10-2
1.69
8.5
7.2×101
1.5×10-1
-
1×102
nm
1 L
1 L
1 La
1 L
2 L
3 L
5.5 nm
3 L
1 L
5 L
1
8
1
10
5
10
-5
5
5
5
1.3 nm
10
2 L
80 nm
24 nm
16.2 nm
56 nm
38 nm
1 L
1 Lb
60 nmb
11 nmb
7.2 nmb
3 Lc
6 Lc
2 L
3
1
5
0.1
1.2
1
10
0.1
1.5
1
10
1
1
3
VBG=2 V
50
-70
41
-40
100
0
0
0
0
0
0
0
8
-35
0
0
-30
80
0
0
60
60
80
-60
0
532
561
532
532
532
532
637
635
635
850
520
532
532
655
454
532
532
520
532
500
655
635
405
635
532
~107
8×102/1.7×103
9.4×1012
1.7×104/5.2×103
3×1010
100-200
-
7.3×10-8
7×104
3.5×1014
50 nW
3.3×10-3
35 pW
1.6×104
6×105
1×105
-
1014
-
-/-
20/20
70/1.23×103
-/~350
5×105/2×105
a Measurement in vacuum. b Chemical Doping, c quantum dots, yellow background：D* extracted by low
frequency noise measurements.
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|
1709.03448 | 2 | 1709 | 2017-09-18T08:34:31 | Wide tailorability of sound absorption using acoustic metamaterials | [
"physics.app-ph"
] | We present an experimental demonstration of sound absorption tailorability, using acoustic metamaterials made of resonant cavities that does not rely on any dissipative material. As confirmed by numerical calculation, we particularly show that using quarter-wave-like resonators made of deep subwavelength slits allows a high confinement of the acoustic energy of an incident wave. This leads to enhance the dissipation in the cavities and, consequently, generates strong sound absorption, even over a wide frequency band. We finally demonstrate experimentally the key role of the filling ratio in tailoring such an absorption, using a metamaterial constituted of space-coiled cavities embedded in a polystyrene matrix. This paves the way for tremendous opportunities in soundproofing because of its low density, low volume, broadband and tailorable capabilities. | physics.app-ph | physics |
Wide tailorability of sound absorption using acoustic metamaterials
A. Elayouch,∗ M. Addouche, and A. Khelif
Institut FEMTO-ST, CNRS, Universit´e de Bourgogne Franche-Comt´e,
15B avenue des Montboucons, 25030 Besancon Cedex, France
(Dated: September 9, 2017)
We present an experimental demonstration of sound absorption tailorability, using
acoustic metamaterials made of resonant cavities that does not rely on any dissipa-
tive material. As confirmed by numerical calculation, we particularly show that using
quarter-wave-like resonators made of deep subwavelength slits allows a high confine-
ment of the acoustic energy of an incident wave. This leads to enhance the dissipation
in the cavities and, consequently, generates strong sound absorption, even over a wide
frequency band. We finally demonstrate experimentally the key role of the filling ra-
tio in tailoring such an absorption, using a metamaterial constituted of space-coiled
cavities embedded in a polystyrene matrix. This paves the way for tremendous op-
portunities in soundproofing because of its low density, low volume, broadband and
tailorable capabilities.
INTRODUCTION
The arrival of metamaterials came up with new de-
signs allowing new wave manipulation functionalities,
that might have been inaccessible with conventional ma-
terials due to their inherent limitations [1]. Among them
is the ability of generating broadband and omnidirec-
tional absorption in a strong subwavelength regime which
remains, more than ever, an important challenge [2]. In
acoustics, the paths leading to absorption are diverse,
whether for ultrasound waves [3] or sound [4]. They are
mainly based on the idea of converting the energy carried
by an incident wave, whether through the conversion to
another mode of vibration/propagation, or through the
conversion of acoustic energy into heat. In this context,
local resonances have showed their potential for generat-
ing remarkable sound opacity and transparency phenom-
ena [5], and when combined with viscoelastic or porous
materials, astonishing sound absorption effects [6]. For
instance, a structure constituted of a membrane on which
are deposited pairs of asymetric and rigid platelets can ef-
ficiently generate absorption phenomena at frequencies of
resonance [7]. Porous lamella-crystals backwarded with
a reflector [8] have moreover been proposed. It was par-
ticularly demonstrated a quasi-omnidirectionnal absorp-
tion for a frequency range exceeding two octaves. Other
studies also highlighted that using one or two layers of
resonant inclusions in a foam matrix, the all backed up
by a rigid plate acting as a reflector, permits to reach
high absorption at resonance frequencies of the inclu-
sions [9]. However, more recently, acoustic metamaterials
based on quarter-wave-like resonances have received par-
ticular attention, for several reasons. One of them is the
fact that such metamaterials, unlike the above examples,
does not rely on the use of materials having intrinsic dis-
sipative properties with regard to the sound [10]. Indeed,
∗ Corresponding author: [email protected]
it was notably demonstrated that combining a slowdown
phenomenon of wave propagation with inherent dissipa-
tion can lead to efficient sound absorption effects [11–
13]. Furthermore, following on space-coiling technique
recently introduced in acoustic metamaterials [14–19],
it was demonstrated that low-frequency sound absorp-
tion can be achieved using coplanar spiral tubes acting
as quarter-wave resonators [20–22]. This permits to effi-
ciently generate high level of sound absorption at a deep
sub-wavelength regime. Indeed, when dealing with such
subwavelength structures,
it was notably showed that
boundary layer effects cannot be neglected, even if they
form only a tiny fraction of the cavities under considera-
tion [23]. From there, others structures consisting in deep
subwavelength channel have been proven to be very effi-
cient sound absorbing materials [24, 25]. While various
types of absorbers are presented with backward reflec-
tors, ignoring the transmission properties that can arise
from these acoustic structures, it could be very interest-
ing to understand more precisely to what extent an ab-
sorber based on local resonances can control the acoustic
properties.
In this paper, we experimentally and numerically study
the sound absorption capabilities of acoustic metama-
terials made of resonant cavities, namely by consider-
ing acoustic metamaterials that combine both quarter-
wave-like resonators and Fabry-Perot cavities. In doing
so, we measure acoustic properties including transmis-
sion, reflection and absorption coefficients. Thus, such
an acoustic absorber does not rely on any intrinsic dissi-
pative material, which is mainly due to the strong sub-
wavelength character of the geometries under consider-
ation. We particularly investigate the confinement of
acoustic energy in the cavities through the role of ge-
ometrical parameters, and its effect on the dissipation of
sound. Based on this concept, we furthermore present
an acoustic metamaterial that allows the generation of
broadband sound absorption, and show the interaction
that may be generated by such a combination, as well
as its implications on transmission properties. Finally,
we demonstrate through experimentation how sound ab-
sorption can be efficiently tailored using a deep subwave-
length metamaterial made of space-coiled cavities.
I. ENERGY CONFINEMENT AND
DISSIPATION ENHANCEMENT
In this context, we may recall that absorption phe-
nomena naturally exist during the propagation of sound
waves. If viscous effects can generally be neglected for
sound propagation in free space, the situation is different
when the dimensions of a structure become significantly
smaller than the wavelength at the operating frequency,
and the so-called shear viscosity can therefore no longer
be overlooked. Indeed, Tijeman [26] have highlighted the
role of thermo-viscous effects on energy dissipation for
the case of acoustic waves propagating in narrow pipes.
Later, Wegdam et al. studied wave propagation in a crys-
tal constituted of a fluid matrix whose viscosity directly
affects the band gap characteristics [27]. Thus, viscous
boundary layers δv =
ρw , with η the shear viscosity, ρ
the fluid density, w the angular frequency, and thermal
ρCpw near the walls, with κ the
boundary layers δt =
thermal conductivity, and Cp heat capacity at constant
pressure, are indicators which allow identifying whether
thermo-viscous effects are likely to be involved or not,
by comparing them to dimensions of the structure. For
example, in the case of resonant transmission through a
slit array, i.e. Fabry-Perot cavities, formed of aluminum
slats, Ward et al. highlighted a significant 5% reduction
of the effective speed of sound with a boundary layer
occupying only 5% of the total slit width, resulting in a
substantial damping of the resonance as well as a shifting
of the resonant frequency [23].
(cid:113) η
(cid:113) κ
In our work, we consider the combination of a quarter-
wave-like acoustic resonator, constructed as a hollow
cylindrical pipe, closed-ended at one side, surrounded by
a Fabry-Perot cavity as presented in Figure 1. Regarding
the quarter-wave-like resonator, the resonance frequency
of the fundamental mode depends on the length of the h
pipe, as f = w/2π = c/4h, with c the sound velocity in
air. The interior radius of the cavity and the width of the
slit, identified as the parameters ri and ws permit, among
others, to control the quality factor of the resonance (see
Figure 1b). We are interested in obtaining the acoustic
transmission properties of the metamaterial, at normal
incidence. The experimental measurements are realized
using a Kundt's tube, which is basically a standing wave
tube. The inner diameter of the tube section is 100 mm.
A loudspeaker, at one end of the tube, is used for gen-
erating a broadband random signal over the frequency
range 50–1500 Hz. Acoustic pressure measurements are
carried out for two different tube termination conditions,
open and approximately anechoic.
In the following, we first experimentally study the in-
fluence of the slit width ws on the variation of the ab-
2
FIG. 1. (a) Photograph of the acoustic metamaterial fabri-
cated by 3D printing. The sample is constituted by a quarter-
wave-like resonator taking the shape of a hollow cylindrical
pipe - circular slit -, closed-ended at one side. (b) Schemat-
ics of the acoustic metamaterial fabricated by 3D printing.
The object is cut using two imaginary cutting planes. The
unwanted portion is mentally discarded exposing the interior
structuration. The width of the slit equals ws. There is an
interior and exterior radius of ri = 25 mm and re = ri + ws.
The walls have a thickness of t = 5 mm. The metamaterial
height is equal to h = 100 mm.
FIG. 2. Amplitude of the transmission (blue), reflection
(green) and absorption (red) spectra obtained experimentally.
The results are related to the sample made of a hollow cylin-
drical pipe - circular slit -, closed-ended at one side, with the
following geometrical parameters: h = 100 mm, ri = 25, and
ws = 15 mm.
sorption. The dimensions of the acoustic metamaterial
are chosen to position the first resonance mode under
the frequency of 1 kHz. The proposed structures are
"fabricated" using the 3D printer Projet SD3500 (see
Figure 1a). They are held, at three connection points
located at the upper and lower sections of the pipe, by
a cylindrical support having an external radius equal to
the radius of the Kundt's tube and a thickness of 3 mm.
A three-dimensional representation of the metamaterial
is shown in Figure 1b. In the present case, the pipe have
a length of h = 100 mm, and a radius of ri = 25 mm,
and a slit width of ws = 15 mm. We obtain the fol-
lowing transmission, reflection and absorption spectra,
presented in Figure 2a. We clearly observe the typical
behavior of a quarter-wave acoustic resonator, that gen-
erates a near-total reflection at the resonance frequency.
The amplitude of transmission reaches −35dB, and a re-
flection coefficient of nearly 0 dB at the frequency of 810
Hz. Moreover, it can be seen that the coefficient of ab-
sorption does not exceed 5%. When we change the slit
width from ws = 15 mm to ws = 2 mm, we can see
that the transmission dip is greatly reduced from −35dB
to nearly −5dB (see Figure 2b), and the absorption co-
efficient increased, reaching almost 40%. This indicates
that much more energy is dissipated, which affects the
quality factor of the resonance. Besides, since the effec-
tive area of the Fabry-Perot cavity is increased, there is
globally more transmission all over the frequency range
under consideration. Indeed, the reflection coefficient is
between −15dB and −7dB for ws = 2 mm.
We can now compare, in Figure 3a, the absorption
spectrum obtained experimentally for samples having dif-
ferent values of slit width ws = 15, 10, 5 and 2 mm. A
first and obvious observation is the local rising of the ab-
sorption coefficient from 5, 8, 26 to 37%, as the slit width
parameter decreases. At this operating frequency of 810
Hz, the wavelength is 42, 3 cm, which is nearly two hun-
dred times larger than a slit width of ws = 2 mm. The
boundary layers represent δv
= 3.2% of
ws
the slit width. Besides, the filling ratio of the quarter-
wave-like resonator, i.e. effective area of the cavity, is
function of ws as (πws(ws + 50)). We reach an absorp-
tion coefficient of from 5% to almost 40%, with a filling
ratio roughly ten times reduced within a range from 40%
to 4%. It is worth highlighting that a similar observation
have been made for the case of porous lamella-crystals [8].
= 2.8% and δt
ws
To gain a better understanding of the mechanisms un-
derlying the results presented above, we carry out a nu-
merical study realized by performing finite elements sim-
ulations with Comsol, and take into account the dissipa-
tion phenomena previously mentioned. In this numerical
analysis, one may use Kirchhoff theory that deals with
total pressure P , total temperature T , total density ρ and
particle velocity (cid:126)v, through the linearized Navier-Stokes
equations, the continuity equation, the heat equation and
the ideal gas law:
3
FIG. 3. Comparison of the absorption spectra related to the
hollow cylindrical pipe - circular slit -, closed-ended at one
side, with the following geometrical parameters: h = 100
mm, ri = 25, but for different configurations of slit width
ws = 15, 10, 5 and 2 mm. (a) is obtained experimentally us-
ing a Kundt's tube and (b) represents the spectra obtained
numerically.
ρ0
∂(cid:126)v
∂t
= −∇P
1
3
η∇ (∇ · (cid:126)v) + η∆(cid:126)v
ρ0∇ · (cid:126)v +
∂ρ
∂t
= 0
ρ0Cp
∂T
∂t
= κ∆T +
∂P
∂t
P = ρR0T
(1)
(2)
(3)
(4)
with ρ0 is the background density of air and R0 spe-
cific gas constant of air. Then, it is a matter of linearizing
these equations, and considering small harmonic pertur-
bations around mean values. We model our structure, by
taking advantage of the axial symmetry of the structure.
We particularly consider rigid conditions at the bound-
aries of the solid domain, and we study the propagation
of acoustic waves in air. An acoustic source is positioned
on one side of the structure and we calculate the trans-
mitted and reflected pressure field at both sides, which
permits us to ultimately obtain the absorption spectrum
for frequencies of interest to us. Moreover, we use Per-
fectly Matched Layers (PML) at the ends of the waveg-
uide in order to avoid reflections at the limits, and thus
create the virtual conditions of an infinite domain.
4
FIG. 5. Density of energy as function of frequency, calcu-
lated with the following geometrical parameters, h = 100
mm, ri = 25, and ws = 15 mm, in the quarter-wave-like
cavity (red curve), and in the surrounding Fabry-Perot cavity
(green curve).
FIG. 4. (a) Pressure fields and (b) fields of particle veloc-
ity vectors, in the quarter-wave-like cavity and in the sur-
rounding Fabry-Perot cavity, at the resonance frequencies ob-
tained numerically for different configurations of slit width
ws = 15, 10, 5 and 2 mm.
Figure 3b, that represents the corresponding absorp-
tion spectra, confirms the trend experimentally observed.
The coefficient of absorption increases with the reduction
of the slit width, at the resonance frequency of the cavity.
In order to better visualize the reasons of this trend, we
represent in Figure 4 the pressure field at resonance, as
well as the field of particle velocity vectors, for different
values of ws. We note that the pressure field has a very
high amplitude in the narrow cavity, in comparison with
the others area of the metamaterial, as observed in Fig-
ure 4a. This comment applies equally to the amplitude of
the field of particle velocity vectors which drastically in-
creases in the narrow cavity, at the resonance frequency.
To illustrate the role played by the variables of acous-
tic pressure and particle velocities, we firstly represent in
Figure 5 the spectra of density of energy in the quarter-
wave-like cavity, and in the surrounding Fabry-Perot cav-
ity, for the configuration ws = 15 mm. This density of
2 ρv2 and potential
energy is calculated from the kinetic 1
2ρc2p2. We can clearly observe how the energy
energies
stored in the quarter-wave-like cavity is much greater
than in the surrounding Fabry-Perot cavity. We partic-
ularly reach a density of energy of 6.10−4J/m2, which is
60 times higher than the surrounding domain.
1
Moreover, we represent in Figure 6 the influence of
the slit width on the energy density reached at the res-
onance frequency. We compare here the variation of en-
FIG. 6.
(a) Maximum density of energy reached and (b) its
corresponding frequency, as a function of the slit width ws
from ws = 0.1 mm to ws = 10 mm. The results are obtained
numerically by finite element method, when considering the
losses (red curve) and without losses (black curve).
ergy density in loss-free and loss-inclusive models, in or-
der to see how viscosity can affect the confinement of
acoustic energy. In linear acoustics, i.e. loss-free model,
the density of energy exponentially increases when de-
creasing the slit width parameter, as observed in Fig-
ure 6a. However, when thermal and viscous losses are
introduced through the linearized Navier-Stokes equa-
tions, we observe that the density of energy confined in
the quarter-wave-like cavity substantially increases with
decreasing the slit width parameter until reaching a max-
imal value at ws = 2.5 mm. Thus, the slit width permits
to control the level of acoustic energy confinement in the
cavity. Such a confinement induces strong variations of
the acoustic pressure and particle velocity fields, which
are direcly related to visco-thermal effects and lead to
enhancement of dissipation. The result is a significant
sound absorption at the resonance frequencies of the cav-
ity involved.
5
we note that the first three frequencies of absorption are
slightly shifted from the the dips of transmission, which
does not correspond to what we observed in the case of
only one resonator. Indeed, this is likely due to the cou-
pling between neighbor resonators that generates a series
of asymmetrical profile of the transmission, and so-called
Fano interaction [28]. Thus, while the absorption phe-
nomena is directly related to the high level of energy
confinement in the cavity, the profile of the transmission
is rather modulated by such an interaction. Finally, we
can also remark that not only the fundamental modes,
but also the harmonics are the place of absorption gener-
ation. Indeed, for these frequencies, the wavelength are
far greater than the slits width, which consequently leads
to strong dissipation of the acoustic energy. However, the
harmonics are more-widely spaced, which diminishes the
Fano interaction and makes the transmission dips and
absorption peaks coincide, as clearly observed in Table I.
II. BROADENING AND TAILORING
ABSORPTION
In light of the above, we have concluded that a nar-
row quarter-wave-like cavity can generate a high level of
acoustic absorption at the resonance frequency. The key
question now is how to broaden the frequency range of
acoustic absorption. The answer to this issue may lie in
the possibility of using an acoustic metamaterial made of
a series of neighboring resonant cavities in order to cover
a large band of absorption. Such an acoustic metama-
terial can take the form of more than one shorter and
narrower hollow core tubes placed inside the upper most
tube. An example of such a structure is represented in
Figure 7, which consists of four end-capped pipes that
fit into each other. The smallest pipes are "suspended"
inside the closest wider one, using two connection points
located at the upper sections of the pipes. The dimen-
sions of the structure are: (h1, r1) = (193.5, 38.7) mm,
(h2, r2) = (177, 33) mm, (h3, r3) = (160.5, 27.3) mm,
(h4, r4) = (144, 21.6) mm, with hi and ri respectively
the height and the radius of each end-capped pipe. All
is held together by a cylindrical support having an exter-
nal radius equal to the radius of the Kundt's tube, and
a height of 196.5mm. The thickness of walls equals t = 3
mm.
FIG. 8. Amplitude of the transmission (blue), reflection
(green) and absorption (red) spectra obtained experimentally.
The results are related to the acoustic metamaterial consti-
tuted of multiple and neighboring resonant cavities, repre-
sented in the frequency range from 100 to 1600 Hz.
FIG. 7. (a) Photograph of the an acoustic metamaterial con-
stituted of multiple and neighboring resonant cavities, and
fabricated by 3D printing.
(b) Schematics of the acoustic
metamaterial constituted of multiple and neighboring reso-
nant cavities. The object is cut using an imaginary cutting
plane. The unwanted portion is mentally discarded exposing
the interior structuring. The metamaterial height is equal to
h = 100 mm.
We represent in Figure 8 the transmission, reflection
and absorption spectra obtained experimentally using
the Kundt's tube. We clearly observe three peaks of ab-
sorption at the frequencies indicated in Table I, with a
maximal absorption of 0.97 reached at the frequency of
303 Hz. These resonance frequencies, corresponding to
the contribution of every cavity, are close to each other,
which permits us to generate a wide frequency band of
absorption centered at the frequency of 350 Hz, that
reaches 0.86 on a relative bandwidth of 48.9%. Moreover,
TABLE I. Absorption and transmission results
Transmission dips
Absorption peaks
Frequency Reached value
Frequency Reached value
303 Hz
346 Hz
396 Hz
1031 Hz
1151 Hz
1291 Hz
17.2dB
16.9dB
16.2dB
13.3dB
15.1dB
14.4dB
315 Hz
353 Hz
394 Hz
1030 Hz
1150 Hz
1295 Hz
0.97
0.95
0.96
0.95
0.96
0.93
In what follows, we totally tailor the acoustic absorp-
tion using the filling ratio of the resonant cavities, which
corresponds to the surface distribution of the resonators
over the total section of the waveguide. To do this,
we consider a cylindrical metamaterial unit-cell consti-
tuted of a space-coiled quarte-wave-like resonator having
a length and a diameter of 30 mm, but designed to have
an effective length of around 130 mm. The slit width is
6
FIG. 9. Photograph of the sample constituted of a polystyrene
matrix (a) in which are embedded several and identical
metamaterial unit-cells (b), all fabricated by 3D printing.
(c)Schematics of a unit-cell of acoustic metamaterial involv-
ing the space-coiled technique. The object is cut using two
imaginary cutting planes. The unwanted portion is mentally
discarded exposing the interior structuring. The diameter
equals 30 mm, the slit width have a value of ws = 2 mm, and
the metamaterial height equals h = 30 mm.
fixed to ws = 2 mm. We fabricate 7 unit-cells as well as a
reception matrix made of polystyrene, as can be seen in
Figure 9a and b. We characterize various combinations
to see how absorption evolves depending on the number
of unit-cells used nj, and represent it in Figure 10. For
the configuration involving only one metamaterial unit-
cell nj = 1, we clearly observe a peak of absorption with
an amplitude of 0.1. From there, it is interesting to see
how the absorption increases, at the resonance frequency
aimed, when adding from 1 to 7 unit-cells of acoustic
metamatarial, until reaching 0.8. As an element of com-
parison, we trace the absorption profile of the polystyrene
matrix and see that taken alone, it does not generate
any particular acoustic absorption of sound under 1 kHz.
Thus, given a fixed slit width, we can see that it is pos-
sible to modulate the level of sound absorption only by
increasing the filling ratio of cross-sectional area of the
resonator. We finally obtain an absorption peak reach-
ing 0.83, at the frequency of 650 Hz, with a bandwidth of
30%. This is achieved with a filling ratio of 3.64 %, and a
metamaterial almost λ
h = 17 smaller that the wavelength.
The metamaterials presented in this paper thus pro-
vide an incredible amount of flexibility, both in terms of
materials and performance. First of all, their subwave-
length character is well suited to address miniaturization
challenges in many application domains involving noise
control. In addition, these metamaterials do not rely on
FIG. 10. Comparison of the absorption spectra related to the
polystyrene matrix in which are embedded from 1 unit-cell
to 7 unit-cells of acoustic metamatarial. As a reference, the
absorption spectra corresponding to the polystyrene matrix
is represented in yellow.
the use of materials having intrinsic dissipative proper-
ties with regard to the sound. They are based on con-
fining and raise the density of energy using resonances,
which leads to enhance the visco-thermal effects of air,
that would be neglected in free propagation. This gives
the ability of functionalizing materials while taking ad-
vantage of their mechanical, optical properties, and more
environmental friendly. Finally, the tailorability demon-
strated in the present article is a powerful tool for ap-
plications for which the suppression of acoustic waves is
not necessarily the challenge, but rather a finer control
of acoustic properties in both frequency and amplitude.
Added to this is the fact that our metamatarial allows the
circulation of air flows and consequently thermal fluxes,
societal impacts are certainly increased tenfold.
III. CONCLUSIONS
In conclusion, we have experimentally demonstrated
that controlling the confinement of the acoustic energy
in a resonant cavity permits to enhance the dissipations
due to visco-thermal effects, and therefore to tailor the
level of sound absorption, even with low value of filling ra-
tio. The experimental data are in good agreement with
numerical results when visco-thermal effects are taken
into account, which have been proved to be necessary
when dealing with strong subwavelength structures made
of channels and cavities. Moreover, we have presented an
acoustic metamaterial constituted of multiple and neigh-
boring resonant cavities and experimentally observed the
generation of broadband absorption. Finally, we inves-
tigated the role of the filling ratio in tailoring such an
absorption. To do this, we designed several and identi-
cal metamaterial unit-cells using space-coiled techniques,
and embedded them in a polystyrene matrix. By doing
so, we expect that such low density, low volume, flexi-
bility and wide tailorability provided by these acoustic
metamaterials make it suitable candidates for tremen-
dous opportunities in soundproofing, but also to design
more complex acoustic device for controlling wave prop-
agation.
research leading to these results has received funding
from the Region of Franche-Comte and financial support
from the Labex ACTION program (Contact No. ANR-
11-LABX-0001-01).
7
ACKNOWLEDGEMENTS
The authors gratefully acknowledge Youssef Tejda for
the fabrication of the device described in this work. The
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|
1803.01789 | 1 | 1803 | 2018-03-05T17:27:11 | Simulation study of ballistic spin-MOSFET devices with ferromagnetic channels based on some Heusler and oxide compounds | [
"physics.app-ph",
"cond-mat.mes-hall"
] | Newly emerged materials from the family of Heuslers and complex oxides exhibit finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than even room temperature. In this work, using the semiclassical top-of-the-barrier FET model, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts. Such a device could retain the spin polarization of injected electrons in the channel, the loss of which limits the operation of traditional spin transistors with non-ferromagnetic channels. We examine the operation of four material systems that are currently considered some of the most prominent known ferromagnetic semiconductors, three Heusler-type alloys (Mn2CoAl, CrVZrAl, CoVZrAl) and one from the oxide family (NiFe2O4). We describe their bandstructures by using data from DFT calculations. We investigate under which conditions high spin polarization and significant ION/IOFF ratio, two essential requirements for the spin-MOSFET operation, are both achieved. We show that these particular Heusler channels, in their bulk form, do not have adequate bandgap to provide high ION/IOFF ratios, and have small magnetoconductance compared to state-of-the-art devices. However, with confinement into ultra-narrow sizes down to a few nanometers, and by engineering their spin dependent contact resistances, they could prove promising channel materials for the realization of spin-MOSFET transistor devices that offer combined logic and memory functionalities. Although the main compounds of interest in this paper are Mn2CoAl, CrVZrAl, CoVZrAl, and NiFe2O4 alone, we expect that the insight we provide is relevant to other classes of such materials as well. | physics.app-ph | physics | Simulation study of ballistic spin-MOSFET devices with
ferromagnetic channels based on some Heusler and oxide
compounds
Patrizio Graziosi1* and Neophytos Neophytou2
1CNR – ISMN, via Gobetti 101, 40129, Bologna, Italy
2School of Engineering, University of Warwick, Coventry, CV4 7AL, UK
* [email protected]
Newly emerged materials from the family of Heuslers and complex oxides exhibit
finite bandgaps and ferromagnetic behavior with Curie temperatures much higher than
even room temperature. In this work, using the semiclassical top-of-the-barrier FET model,
we explore the operation of a spin-MOSFET that utilizes such ferromagnetic
semiconductors as channel materials, in addition to ferromagnetic source/drain contacts.
Such a device could retain the spin polarization of injected electrons in the channel, the
loss of which limits the operation of traditional spin transistors with non-ferromagnetic
channels. We examine the operation of four material systems that are currently considered
some of the most prominent known ferromagnetic semiconductors, three Heusler-type
alloys (Mn2CoAl, CrVZrAl, CoVZrAl) and one from the oxide family (NiFe2O4). We
describe their bandstructures by using data from DFT calculations. We investigate under
which conditions high spin polarization and significant ION/IOFF ratio, two essential
requirements for the spin-MOSFET operation, are both achieved. We show that these
particular Heusler channels, in their bulk form, do not have adequate bandgap to provide
high ION/IOFF ratios, and have small magnetoconductance compared to state-of-the-art
devices. However, with confinement into ultra-narrow sizes down to a few nanometers,
and by engineering their spin dependent contact resistances, they could prove promising
channel materials for the realization of spin-MOSFET transistor devices that offer
combined logic and memory functionalities. Although the main compounds of interest in
1
this paper are Mn2CoAl, CrVZrAl, CoVZrAl, and NiFe2O4 alone, we expect that the insight
we provide is relevant to other classes of such materials as well.
Keywords: spin transistor, ferromagnet, Heuslers, ferromagnetic oxides, top-of-
the-barrier ballistic transistor model, spintronics
2
I. Introduction
Low power operation, storage and computing functionalities embedded in the same
device, are among the advantages of the spin-MOSFET, the charge-based beyond-CMOS
prime transistor device candidate.1-4 Current spin-MOSFETs have ferromagnetic source
and drain contacts, but a non-magnetic channel (such as Silicon). The current-voltage
characteristics are controlled by the gate voltage and by the relative magnetization
orientations of the source and drain, which act as the spin injector and the spin detector,
respectively. Thus, spin-MOSFET devices can be used as both, a logic transistor and a
memory storage element since the parallel (P) and the antiparallel (AP) magnetization
directions of the source and drain result in different resistive behaviors. The state-of-the-
art spin-MOSFET proposed by Toshiba4-6 consists of ferromagnetic source and drain
contacts connected through tunnel barriers to heavily doped silicon regions to overcome
the "conductivity mismatch" issue.7 The 'write' operation is performed with a magnetic
tunnel junction (MTJ) that sets the magnetization of the drain via the spin transfer torque
(STT) effect,5, 6 while the magnetization direction of the source is kept unchanged.
Despite the large efforts over the last several years, a complete experimental
demonstration of the spin-MOSFET device has not yet been achieved, except at very low
temperatures (12 K)5, 6 however, reliable operation up to 400 K is required.8 One reason
for this failure is the loss of the current spin polarization due to spin scattering in the non-
ferromagnetic channel.9, 10
A channel composed of a ferromagnetic semiconductor (FS), which effectively
transfers the spin information from source to drain, could retain the spin polarization. FSs
can be achieved by magnetic doping (as in the case of "diluted magnetic semiconductors"
– DMS 11, 12), but usually TC is less than 200 K, which forbids their use in electronic
devices.8, 13 Very high TC (>700K) can be measured in bulk DMS (due to segregated
ferromagnetic clusters, for instance), but in that case there is no separation between
majority and minority spin bands,11, 13 while it is imperative that the ferromagnetism
originates from the material's bandstructure and is not a result of spurious effects.11, 13
Recent developments in materials science, however, have demonstrated semiconductor
compounds that are actually intrinsically ferromagnetic (not due to doping) with TC > 400
3
K. Such compounds can be traced in the Heusler 14-18 and the oxide families.19, 20 Thus, in
this work, we computationally explore a spin-MOSFET device in which the channel is
composed of recently demonstrated FSs from the Heusler families, more precisely the
Heusler alloys with Y-type or XA-type lattice (in particular alloys CrVZrAl, CoVZrAl and
Mn2CoAl) and oxide families (in particular NiFe2O4), and elaborate on the conditions that
will make such materials suitable for logic and memory spin-MOSFET applications. The
specific materials we consider are described using DFT bandstructure extracted band
offsets and effective masses. We explore bandstructure conditions to achieve the highest
spin polarization (SP) in the channel and the conditions for both high SP and ION/IOFF ratio,
as well as how quantum confinement and spin dependent contact resistances can be
engineered to improve the device performance.
II. Approach
We consider a symmetric device in which the source and drain are identical in order
to account for an easier fabrication process (although in principle the source can be non-
magnetic). The source and the ferromagnetic channel are always aligned in parallel, while
the ferromagnetic drain is switched via STT-MTJ, as in Toshiba's approach4-6 (see Fig. 1a).
This is somewhat similar to a Schottky barrier MOSFET previously proposed,21 but here
we consider Ohmic contacts and parameters from real material bandstructures.
The semiclassical top-of-the-barrier ballistic model (FETToy22), validated in the
past for various other materials,23, 24 is used to simulate the transistor behavior including
self-consistent electrostatics.24, 25 We assume a 1.1 nm SiO2 gate oxide. The model assumes
that the positive going states are filled according to the source Fermi level EFS, whereas the
negative going states according to the drain Fermi level, EFD. The current, within the
Landauer formalism, is the difference of the two fluxes.25
We describe the material using multiple majority and minority spin bands, both for
valence (VB) and conduction bands (CB) combined, contributing to positive and negative
charges. Thus, a charge neutrality level is set in the simulation to begin with, for the initial
position of the Fermi level EF. EF is set to -0.1 eV arbitrarily, which only affects the shift
4
in the threshold voltage of the channel. Room temperature T = 300 K is considered. To
keep the bandstructure features qualitatively simple, we assume 1D, parabolic, isotropic
bands, despite the fact that the bands can be non-parabolic and anisotropic. However, the
effective masses, band degeneracies, and band splittings for each compound we consider
are extracted from DFT data that are presented in various references in existing literature
and summarized in Table 1. 14, 17-19 We consider only the bands around the Fermi level,
which are more involved in transport (lower CBs and higher VBs), in the directions X
for Mn2CoAl and CoVZrAl and K for CrVZrAl. In the case of the oxide NiFe2O4, we
adopt an average conductivity effective mass
1
𝑚𝑎
=
1
2𝑚R
+
1
2𝑚T
, following the approach
commonly used in semiconductors,26 where mR and mT are the effective masses along R
and T respectively.27
Thus, our approach provides useful first order guidance into the effect of the
bandstructure features in electronic transport and spin-MOSFET device operation of such
materials. The spin-polarization (SP) of the current is defined as SP = (I↑ − I↓) (I↑ + I↓)
⁄
where I↑(↓) is the majority (minority) spin currents in the channel. The channel is assumed
to be coupled to spin dependent source/drain resistances as indicated later on in Fig. 3a,
and we then compute the device current in a post-processing step using a bi-dimensional
spin orientation separately is mapped as 𝐼(𝑉D, 𝑉G) ≔ 𝐼(𝑉D
linear interpolation scheme.28 In this scheme, the bi-dimensional current matrix for each
′ = 𝐼(𝑉D)𝑅S +
′ = 𝐼(𝑉G)𝑅S + 𝑉G, and RS is the total series resistance coming from the sum of the
′) two-dimensional current data
𝑉D, 𝑉G
source and drain contact resistances. Then, the 𝐼(𝑉D
′ , 𝑉G
′) where 𝑉D
′ , 𝑉G
matrix is linearly interpolated on the original (VD, VG) set.
III. Results and Discussion
Figure 1b shows a generic bandstructure used to investigate what parameters lead
to high SP necessary for memory functionality, and high ION/IOFF ratio necessary for
computation functionality. Majority (minority) spin bands are shown in blue (red). The
three basic parameters we consider are the energy gap of the majority spins EG
↑, the
splitting between the two spin bands , and the bands' effective masses m↑(↓).
5
For this first order evaluation of SP, in Fig. 1c we use near equilibrium conditions
with low drain bias VD = 0.1 mV and effective masses of m↑(↓) = m0, where m0 is the rest
mass of the electron. At this point, we neglect the series resistances. We choose band
energy values as noted in the figure, typical for Heuslers like CoVZrAl, CoVTiAl, and
Mn2CoAl (see also Table 1).14, 17, 18 Figure 1c summarizes the SP dependence of the
materials with different bandstructure parameters. Starting from the bandstructure we show
in Fig. 1b (blue line for SP in Fig. 1c) we observe that by increasing , the SP rises (to the
yellow line). SP is also retained for higher gate biases as well, since the bands of the
minority carriers reside at higher energies and so they have a smaller occupancy.
Decreasing EG
↑ until the majority CB and VB overlap (noted by negative bandgap values
in Fig. 1c) as in the case of Mn2CoAl, further improves slightly the SP for VG higher than
0.7 V, because this increases the majority DOS contribution (green dashed-dotted line).
Increasing the majority effective mass (by 3×), further improves the SP (red-dashed line).
A heavier majority band allows much less shift in the bands with VG, thus the EF remains
within the majority band. Thus, in order to have high SP in ballistic channels, we seek high
, large effective mass for the majority spins (in the case of scattering dominated channels
larger masses would of course induce more scattering and this condition needs to be re-
examined), and in general a small EG
↑.
On the other hand, a small EG
↑ reduces the ION/IOFF ratio. To have a ratio ION/IOFF ~
103 evaluated at VD = 0.75 V, the ITRS (International Technology Roadmap for
Semiconductors) specified voltage for the 2020 technology node,29 the gap should be at
least 1.1 eV (similar to the Si gap). To explore the effect of the EG
↑ on the SP at the specified
voltage VD = 0.75 V, we set the values of to 0.3 eV and of m↑(↓) to m0 and vary EG
↑ from
the overlap condition (EG
↑ = -0.1eV) that maximizes SP in the low bias regime, to 1.1 eV,
that is required for sufficient ION/IOFF ratio. Figure 1d reports the results for three bandgap
values at VD = 0.75 V: EG
↑ = -0.1 eV, typical also of spin gapless Heuslers like bulk
Mn2CoAl, EG
↑ = 0.3 eV, representative of Heuslers like bulk CoVZrAl, and EG
↑ = 1.1 eV.
We chose = 0.3 eV and m↑(↓) = m0 for all cases. In this high drain bias case, band overlap
results in reduced spin polarization. The relatively high drain bias sets EFD too low, closer
to the minority VB, which thus begins to contribute to transport. A higher EG
↑ value
6
prevents this and still allows a high SP at the required drain bias. The spin gapless
semiconductors with a zero, or negative, bandgap for majority spins and a finite bandgap
for the minority, have almost 100% SP only at very low drain biases. Thus, they can act as
very efficient spin injecting electrodes but not spin-polarized channels for spin-MOSFETs.
To consider both the ION/IOFF ratio and SP in device performance evaluation, we
introduce here a performance indicator Q, defined as the product of the highest SP(VG) and
the highest ION/IOFF(VG), both of them evaluated at VD = 0.75 V, and both being gate voltage
dependent. These parameters are evaluated at different VG because they correspond to
different functionalities (ION/IOFF for logic and SP for memory). Figure 1e plots the Q
values for the four illustrative bandstructure parameters. Q should be at least in the 103-104
range to ensure sufficient operation. By ignoring the majority/minority band separation in
(i), Q drops to zero because SP is zero. Increasing to 0.1eV in (ii) increases SP to ~0.5
but the ION/IOFF ratio is too low to gain a decent Q. In (iii) where EG
↑ is increased to 1.1 eV
(to obtain a good ION/IOFF ratio) and the split between the majority and minority spin bands
to 0.3 eV (typical of many Heuslers) we achieve an acceptable Q with SP~1. Further
improvement is observed by decreasing the electron effective mass to 0.1m0 for both the
spin orientations because of higher ION/IOFF ratio (iv) – i.e. when comparing at the same VG
the bands are shifted further towards the Fermi level when the effective mass is lower,
which raises ION.
Because common bulk ferromagnetic Heuslers do not usually possess the essential
bandgap to provide large ION/IOFF ratios, one way to increase the bandgap is to use ultra-
narrow Heusler channels where the bandgap is increased due to quantum confinement. A
simple estimate of the bandgap increase can be provided by the particle-in-a-box
quantization theory. The energy shift of the bands is calculated as 𝐸𝑛 =
𝜋2ħ2
2𝑚𝑡2 where t is the
material confinement size, and m is the effective mass, which is assumed to be isotropic
here. One needs to be aware that due to the complexities of the materials' bandstructures
this approach could only serve as a crude indication. In fact, there are no adequate
theoretical or experimental studies that investigate confinement effects of Heusler
compounds to-date from which we could have extracted more accurate information.30, 31
Nevertheless, to obtain a more realistic bandgap behavior with confinement, we estimate
7
the band edges using the approach described in Ref. [23, 24]. In this approach, the confined
band edges are approximated by the actual bulk DFT non-parabolic band values at an
equivalent quantized wavevector of value kL=/t where t is the confinement length. 24
The Heusler compound CrVZrAl, for example, is a ferromagnetic semiconductor
with EG
↑ ~ 0.66 eV (Fig. 2a) and can only allow a small ION/IOFF ratio. Figure 2b shows
the shift of the band edges with confinement dimension (thickness of a quantum well or
diameter of a quantum wire labelled here as t). Because of the relatively high masses (in
the 0.4 – 3.0 m0 range, see Table 1) it is necessary to reduce the confinement dimension
below t = 3 nm to achieve a sizeable bandgap increase. In this case, the Q factor is largely
improved for the ultra-narrow Heusler channel compared to bulk, whereas the SP is also
close to one at the considered biases (Fig. 2c). The dotted lines in Fig. 2b and Fig. 2c
indicate the band edges and Q factor for non-parabolic band considerations. Non-
parabolicity slows down the bandgap increase for thicknesses below t < 2.5 nm, similarly
to the case of Si,32 which reflects in smaller Q values.
Due to the large number and widely varying properties of Heusler compounds, each
alloy can have distinct behavior. Figure 2d shows indicatively the bulk Mn2CoAl
bandstructure, which is a widely studied spin gapless semiconductor with a finite band gap
of ~ 0.5 eV for the minority spin (red lines), but a zero band gap (a small overlap of 0.03
eV in fact) for the majority spin (blue lines). Due to the zero bandgap, transistor operation
is prohibited, but confinement in ultra-narrow dimensions would provide a finite bandgap.
Figure 2e shows how the band edges move with increasing confinement. For this Heusler,
the layer thickness has to be reduced below t < 1.5 nm to achieve sufficient Q values as
shown in Fig. 2f. Its somewhat lower conduction band effective mass compared to
CrVZrAl (see Table 1), results in larger shift of the band edge, but the smaller bulk
bandgap requires further thickness scaling. Considering non-parabolocity effects, as
depicted by the dotted lines in Fig. 2e and Fig. 2f, shows that this material needs to be
scaled to unrealistically small sizes to be a useful transistor channel material.
We note here that we assumed that the properties of these materials behave
according to the conventional particle-in-a-box confinement trend. In the case of the
another Heusler compound, the Co2MnSi, thin films down to 70 nm have been
8
demonstrated to maintain the half metallic bulk behavior.33 For smaller thicknesses, studies
indicate that the bulk magnetic properties are maintained until 10 nm (although the half
metallicity was not verified), but for lower thicknesses the magnetic properties gradually
deteriorate.34 Such results, however, should not prevent the employment of Heusler alloys
within the proposed device concept. Ferromagnetic semiconducting Heuslers, also named
'spin filters', have been studied only recently.14, 18 There is a large number of unexplored
Heusler compounds, which means
that
the search for ferromagnetic Heusler
semiconductors with larger EG
↑ and possibly lower masses (≤ 0.1m0) is required and timely.
New materials are likely to be identified, for which EG, Δ, confinement behaviour, strain
behaviour, etc., would be addressed for each material separately.15, 16, 35
We now describe the operation of the actual spin-MOSFET device. As a
↑
bandstructure example we adopt the one from Fig. 1d with mh = 1m0 and me = 0.1m0, EG
= 1.1 eV and = 0.3 eV (typical values that could provide proper operation). The spin-
MOSFET has spin dependent series resistances (different for majority and minority spins)
at the source/drain contacts. These contact resistances arise from the fact that even in an
ideal contact between two ferromagnetic materials, spin flip events occur at the interface
because of the different spin resolved density of states and group velocities in the junction
materials.36 Thus, even in the absence of any 'traditional' contact resistance, the interfacial
spin scattering introduces a junction resistance. Figure 3a shows the device model with
the resistances used for the simulations.
The contact resistances are estimated from a model for ideal contacts where an
interfacial voltage drop VI occurs for spin flip events. The model is detailed in Ref. [36]
and in the Appendix, and summarized as follows:36 Consider a junction between two
ferromagnetic materials A and B (in Ref. [36] the two materials A and B are considered to
be the same, while in our case they are different). The interfacial voltage drops for the
parallel (P) and antiparallel (AP) cases at the junction of these materials are
∆𝑉𝐼
P =
𝐽
2
(SPA∆SP𝜌A𝑙𝑠
A + SPB∆SP𝜌B𝑙𝑠
B) and ∆𝑉𝐼
AP = 𝐽(SPA
2𝜌A𝑙𝑠
A + SPB
2𝜌B𝑙𝑠
B) respectively,
where J is the current density, A(B) the resistivity of the material, ls the spin diffusion length
inside the ferromagnet, and SP = SPA – SPB > 0 (see Appendix). We assume A is a
Heusler alloy with SPA= 0.95, A = 1∙10-4 cm 16 and lsA = 3 nm,37 and B a Permalloy with
9
SPB = 0.45,38 B = 1.5∙10-5 cm and lsB = 5.5 nm.39 We then obtain ∆𝑉𝐼
to consider more detrimental events that could exist at a Heusler interface,40 we lower this
. In order
AP ∆𝑉𝐼
⁄
P~4
value by ~ 40% to 2.5, since the loss of SP due to defects could range from 20 to 45%.40
Thus, ∆𝑉𝐼 𝐽⁄ ~ 10-11 m2, so for a 100 nm2 area junction the resistance is R↑ ~105 . The
relative values for the cases we examine are denoted in Fig. 3a.
From a practical point of view, it is possible that a thin non-magnetic layer (~ 1 nm)
between the ferromagnetic drain and the ferromagnetic channel is necessary to decouple
their magnetizations.41 This could be metallic, for instance Al in the case of Mn2CoAl, or
insulating, and could even increase the contact resistances (thus increasing the
magnetoconductance MC if the spin dependent resistances dominate more), but does not
alter the basic concept, and therefore we neglect it here.
Figure 3b shows in black lines the ID versus VG for VD = 0.75 V for the P (solid)
and AP (dash-dot) configurations for the calculated resistances R↑ = 105 and
R↓ = 2.5×105 . The vertical blue solid lines represent the ON and OFF gate biases that
approximately provide the maximum achievable ION/IOFF ratio for a VG window of 0.75 V.29
The corresponding ratio is around ION/IOFF ~ 104. The vertical blue dotted line represents
the 'read' bias, which is the VG of the maximum magnetoconductance MC = (IP-IAP)/IAP.
Thus, a memory bit is 'written' by defining the magnetization orientation of the drain as in
Toshiba's concept,6 and 'read' as a MC. That is, if the drain spin polarization is parallel to
the current spin polarization, the current value is ~1.6 A and the bit is read as '1', whereas
in the antiparallel case the current value is ~1 A and the bit is read as '0'. Thus, the device
operation is characterized by three gate bias values: VG
on, VG
off and VG
read. The former two
are used for logic computation in both the P and AP states, while the latter is used to read
the stored bit.
Figure 3c shows by the black line the MC for the bandstructure of the Heusler
example we consider. The MC for this reference example has a maximum ~ 60%, which
is, however, lower compared to state-of-the-art devices, which is in the range of 150 –
300 %.42 A way to increase this to higher values is to use larger spin splitting , but more
importantly change the ratio between the majority and minority contact resistances. Indeed,
Fig. 3b shows in red lines the drain current for a case where the minority spin resistance
10
is larger by an order of magnitude at R↓ = 106 . This reduces the contact resistance ratio
by 4× to R↑/R↓ = 0.1. This ratio is different from what we have calculated in the model of
ideal contacts above,36 however, this is not unrealistic for tailored interfaces and contact
engineering, for instance, by introducing spin dependent tunnel barriers like MgO in iron
based contacts.43 In fact, Co2Cr0.6Fe0.4Al/MgO/CoFe junctions have shown a resistance-
area product of some km2, 44 in the same order as the contact resistances we use (we
assume a 100 nm2 contact area). In such case the ON conductance slightly decreases, the
ION/IOFF ratio does not suffer too much (retains the same order of magnitude), the 'read'
current drops to ~0.4 A, but the MC strongly improves to 300% as shown by the red line
in Fig. 3c. By the green-dashed line we show the change in MC as the spin splitting alone
is doubled from 0.3 eV to 0.6 eV. Doubling the spin splitting allows the MC to
reach only slightly higher value at higher gate biases, and therefore by itself is not enough
to improve the MC.
We note that although present memory devices for Magnetic Random Access
Memory (MRAM) demand MC at 150 – 300 %,42 the early spin valve devices that enabled
the impressive increase in storage density in the 90s had a MC well below 20% .45-47 Thus,
the MC we calculate for R↑/R↓ = 0.4 and = 0.3 eV (black lines) can still be applicable for
memory functionality, and this lower value could be compensated by the possibility of
having a non-volatile memory embedded in the CPU,48 or by the allowed reconfigurable
logic functionality.4 However, due to the large number of Heusler alloy possibilities, other
compounds could be identified in the future, or the contacts could be accordingly
engineered, to provide more favorable spin dependent contact resistances. For instance, the
use of ferromagnetic metallic Heusler alloys for source and drain instead of Permalloy,
could lead to a much more improved spin dependent resistances ratio because the
source/drain would have a higher SP.49
Finally, we examine the spin-MOSFET device operation in channels with realistic
material bandstructures for the Mn2CoAl, the CrVZrAl, the CoVZrAl, and the NiFe2O4
oxide (Fig. 4). As discussed above, to increase the bandgap of the Heuslers we consider
confined channels (t = 1.5 nm for Mn2CoAl, t = 2 nm for CrVZrAl, and t = 1.5 nm for
CoVZrAl), but still consider the bulk NiFe2O4. The approximate bandstructures are shown
11
in the insets of Fig. 4a, 4c, 4e, and 4g, respectively. The effective masses and band offsets
are as explained extracted from bulk DFT data as shown in Table 1.14, 17-19
Figure 4a shows the drain current versus VG for the P and AP states at VD = 0.75 V
for the t = 1.5 nm thick Mn2CoAl based device. In this case, quantum confinement strongly
moves the lowest majority CB, but less the heavier mass lowest minority band. Thus, this
ultra-confined material acquires a large bandgap (> 1 eV), and the ION/IOFF ratios in Fig. 4a
are as high as 103 in both the P and AP states, with VG
off = 0.2 V and VG
on = 0.95 V. The
MC, however, plotted in Figure 4b at VD = 0.75 V, features low values below 20%. On the
other hand, the introduction of the non-parabolicity correction, as shown by the dotted line
in Fig. 4b, increases the MC values to ~ 40% in most of the 'ON' bias region. Non-
parabolicity, as shown above in Fig. 2e, weakens the band shift so that the band gap is
smaller, but the separation between the lowest majority and minority CBs becomes
higher as a result of the different energy shift of the bands. This causes higher MC, but at
expense of lower ION/IOFF ratio (not shown).
The zero bandgap disadvantage of Mn2CoAl resulted in scaling at t = 1.5 nm, which
could be technologically challenging. We further consider two more Heusler compounds
as spin-MOSFET channels with finite bandgap in their bulk form, CrVZrAl (EG = 0.66 eV)
and CoVZrAl (EG = 0.25 eV). These channels still need to be confined to acquire useful
bandgap. Unfortunately, their higher masses (compared with Mn2CoAl) still require strong
scaling to t ≤ 2 nm channel thicknesses. The I-V characteristics and MC for CrVZrAl are
shown in Fig. 4c-d. The ION/IOFF ratios in Fig. 4c are as high as 103 in both the P and AP
states respectively, with VG
off = 0.7 V and VG
on = 1.45 V. The MC, plotted in Figure 4d at
VD = 0.75 V, features values of ~ 40% around VG
on. Similarly, for CoVZrAl in Fig. 4e-f
the ION/IOFF ratios (Fig. 4e) are as high as 104 in both the P and AP states respectively, with
VG
off = 0.2 V and VG
on = 0.95 V. The MC, in Figure 4f at VD = 0.75 V, features values of
~ 50% in the VG region between 0.3 V and 1.4 V. Thus, the main observation here is that
the bulk EG
↑ appears to be the limiting factor for these ferromagnetic semiconducting
Heuslers to be employed as spin-MOSFETs, although in the future other more suitable
compounds with larger bandgaps could be identified.
12
In Fig. 4g-h we show the current-voltage characteristics and MC, respectively, for
a spin-MOSFET device with bulk NiFe2O4 as channel material. The series resistances we
use are the same as the ones deduced for the magnetic Heusler compounds, as such values
are available for only a very few Heusler-type alloys. (To extract the actual resistances only
is known for NiFe2O4. To the best of our knowledge, there is no information about and
ls). In this case the ION/IOFF ratios are ~ 106 for both the P and AP states respectively (Fig.
4g), measured by scanning the ID-VG characteristics with a 0.75V VG window, with VG
off at
1.4 V and VG
on at 2.15 V. The AP current, however, is higher compared to the P current,
which leads to negative MC of ~ -70% (Fig. 4h). Such negative MC comes from the
crossing of the majority and minority bands that makes the AP current higher than the P
current. It is not rare to find spintronic devices that show negative MC – a ferromagnetic
material (metal or semiconductor), does not necessarily inject majority spin electrons. Most
of the occupied states below the Fermi level are aligned as the macroscopic material and
are named 'majority' (the others are named 'minority'), but only the electrons closest to
Fermi contribute to transport. Those could be of 'minority' spin configuration, i.e.
populated with electrons aligned antiparallel to the total spin polarization of the material,
as in Cobalt and Nickel.50 This would provide negative MC.51 Hence, when the drain and
the channel are aligned in the antiparallel configuration (compared to the source
magnetization), higher conductance is achieved, compared to parallel alignment.
Finally, we note that here we explored only four materials for the performance of
the spin-MOSFET, however, several other materials can be identified.52 For instance,
Ti2VSb Heusler family indicates promising properties,53 and Cr based alloys seem to have
higher bandgaps.18, 54 In addition, very recently ferromagnetic semiconductors have been
predicted in the 2D layered Iron hydroxide with bandgap of around 0.65 eV. 55 While
ferromagnetic metallic Heuslers (L21 lattice) have a long history 30 and the research on
"Inverse-Heuslers" (XA
lattice) compounds
is
taking off, 56, 57 ferromagnetic
semiconducting Heuslers that belong to the quaternary Heusler family too, are a rather
recent and perhaps underestimated subject of study.14, 18, 58 Thus, in this work we aim at
enlightening the relevance and timeliness of this materials research direction.
13
IV. Conclusions
In summary, we have explored the possibility of spin-MOSFET devices with
recently realized ferromagnetic semiconductor channels based on Heusler and oxide
compounds. This approach transfers the magnetic functionality from the source to the
channel and preserves the spin information more effectively compared to current spin-
MOSFET devices. Among the multiple parameters needed for a proper spin-MOSFET
device we have examined the ION/IOFF ratio, SP, and MC based on realistic bandstructure
features taken from actual materials as either bulk or confined channels. We show that
these materials could enable a new kind of spin-MOSFET with a spin-polarized channel
rather than only spin-polarized contacts once confinement is utilized to improve their
bandgap, and/or contact engineering provides significantly different resistances for each
spin channel, which increases magnetoconductance. Importantly, Heusler thin films can be
deposited in silicon compatible processes,15, 16 even in the most complex quaternary
alloys,35, 59 which increases their technological appeal. The proposed device could be a
promising candidate for the realization of spin-MOSFETs with room temperature operation
and large spin polarization robustness that combine logic and memory functionalities. It
could provide the advantage of having only one component for processing and data storing,
reducing the number of components, the time transfer between the processing unit and the
memory unit (RAM and HDD/SSD), and the parasitic capacitance related to the
interconnects, all of which are targets set by the ITRS for beyond-CMOS charge-based-
devices.1
Acknowledgements: PG has received funding from the Italian government (PRIN
project No. 2015HYFSRT). NN has received funding from the European Research Council
(ERC) under the European Union's Horizon 2020 Research and Innovation Programme
(Grant Agreement No. 678763). We thank Gerhard Fecher (Max-Planck-Institute, Institute
for Chemical Physics of Solids) for the information about the Mn2CoAl bandstructure,
Murat Tas (University of Patras, School of Natural Sciences) for the information about the
CrVZrAl bandstructure, Markus Meinert (Bielefeld University, Faculty of Physics) and
Francesco Mezzadri (University of Parma, Department of Chemistry) for the information
about the NiFe2O4 unit cell symmetry.
14
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17
Figure 1:
Figure 1 caption:
(a) Device schematic with the arrows indicating the magnetization direction. The drain
magnetization is switched (blue to red and reversely) by using an MTJ that exploits the
STT effect as in the 'Toshiba' device concept.4 The direction of the blue arrow in the drain
represents the parallel (P) configuration while the direction of the red arrow represents the
18
antiparallel (AP) configuration. (b) Generic bandstructure featuring majority (blue) and
minority (red) bands. (c) Spin polarization (SP) versus gate bias VG for VD = 0.1 mV (low-
bias conditions) for four different material bandstructures as the spin-MOSFET channels.
The parameters (bandgap, spin band splitting and effective mass) of the different
bandstructures are noted. (d) Spin polarization (SP) versus gate bias VG for VD = 0.75 V for
three different material bandstructures as the spin-MOSFET channels. The other
bandstructure parameters are kept constant at eVand m↑(↓) = m0 while the bandgap
is varied as noted. The bands overlap case (negative EG
↑ = -0.1 eV), that corresponds to a
spin gapless semiconductor, gives the best SP in the low bias regime but its performance
drops at practical VD. (e) Performance factor Q defined as the product between the Ion/Ioff
ratio and the highest SP for VD = 0.75 V for four bandstructures with parameters as
indicated.
19
Figure 2:
Figure 2 caption:
The influence of quantum confinement on the bandstructure and Q factor in the Heuslers
CrVZrAl (a,b,c) and Mn2CoAl (d,e,f) using parabolic band approximation and particle-in-
a-box quantization. In (b), (c), (e) and (f), the dotted lines represent the data calculated
considering numerical non-parabolic bands, as described in the main text. (a, d) Bulk
20
bandstructures, and (b, e) shift of the band edges with confinement for CrVZrAl and
Mn2CoAl, respectively, versus film thickness. EC1, EC2, EV1, EV2 are the majority and
minority conduction bands and valence bands edges, respectively. (c, f) The Q factor for
the CrVZrAl and Mn2CoAl cases, respectively, for small layer thicknesses.
21
Figure 3:
Figure 3 caption:
The spin-FET device operation. (a) The spin-FET model with spin dependent series
resistances introduced for the majority and minority carriers at the source/drain contacts.
The values for the ratio of the parallel (P) and antiparallel (AP) cases are indicated with the
R↑ value being 105 . The device is symmetric so that the resistances at source and drain
have the same values. (b) Drain current versus gate voltage characteristics at VD = 0.75 V
for = 0.3 eV (a typical value for Heusler alloys) for two spin dependent resistance
combinations. In black lines the case for R↑=105 and R↓=2.5∙105 is shown, which is
as calculated in the text. In red lines the case for R↑=105 and R↓=106 is shown. Parallel
(P) and antiparallel (AP) orientations are shown by the solid and dash-dot lines,
respectively. The vertical solid blue lines show VG
off and VG
on for which high Ion/Ioff ratio
is achived for a bias window VG = VD = 0.75 V for both orientations (Ion/Ioff is ~ 104 in all
22
the cases, and is only slightly affected by the increased minority spin contact resistance).
The vertical dotted blue line represents the 'read' gate bias VG
read for memory operation.
(c) The magnetoconductance (MC) percentage as a function of VG for VD = 0.75 V for three
device parameter combinations as indicated, which shows separately the effect of and
R↑/ R↓ on the MC.
23
Figure 4:
Figure 4 caption:
Drain current magnetoconductance (MC) percentage versus gate bias for real materials. (a)
The ID-VG for a t = 1.5 nm narrow Mn2CoAl Heusler alloy channel with parallel (P) and
anti-parallel (AP) current configurations shown by solid and dash-dot lines, respectively
and noted. The Ion/Ioff ratio is ~ 103 for both the P and AP cases. (b) MC versus gate bias
for (a). The dotted line represents the MC when taking into account non-parabolicity effects,
that increase the MC while the ID-VG is only slightly affected (not shown). (c)-(d) Same as
24
(a) and (b) for a t = 2 nm narrow CrVZrAl Heusler channel. The Ion/Ioff ratio is ~ 103. (e)-
(f) Same as (a)-(b) and (c)-(d) for a t = 1.5 nm narrow CoVZrAl channel. The Ion/Ioff ratio
is higher at ~ 104. (g) The ID-VG for the oxide NiFe2O4. (h) MC versus gate bias for (g).
The Ion/Ioff ratio is ~ 106 for both the P and AP cases, respectively. The corresponding
bandstructures of the materials are shown in the insets, labelling the majority (blue) and
minority (red) bands. In all cases VD = 0.75 V. In the NiFe2O4 case, the negative MC
originates from the fact that the minority bands have a lower bandgap.
25
Table 1
Mn2CoAl CB1
↑ CB2
↑ VB1
↑ VB2
↑ VB3
↑ CB1
↓ CB2
↓ VB1
↓ VB2
↓ VB3
↓
E
offset
m*
(eV)
-0.01
0.6
0.02
0.02
0.02
0.3
0.45
-0.14
-0.14
-0.14
0.5
2.0
0.2
0.2
0.2
10.0
0.1
0.2
0.2
0.1
CrVZrAl CB1
↑ CB2
↑ CB3
↑ VB1
↑ VB2
↑ VB3
↑ CB1
↓ CB2
↓ CB3
↓ VB1
↓ VB2
↓ VB3
↓
E
offset
m*
(eV) 0.66
1.15
1.4
0.0
-0.2
-0.4
0.95
1.4
1.5
-0.45
-0.5
-0.5
0.4
2.3
3.4
0.4
0.2
0.8
1.3
1.6
2.0
5.0
1.9
0.5
CoVZrAl CB1
↑ CB2
↑ VB1
↑ VB2
↑ VB3
↑ CB1
↓ CB2
↓ VB1
↓ VB2
↓ VB3
↓
E
offset
(eV)
0.0
0.1
-0.25
-0.25
-0.25
0.25
0.55
-1.0
-1.0
-1.0
m*
1.4
3.2
0.6
0.8
1.2
4.0
1.6
0.8
1.1
1.5
NiFe2O4 CB1
↑
CB2
↑
CB3
↑
CB4
↑
VB1
↑
VB2
↑
VB3
↑
VB4
↑
E
offset
(eV) 2.0
m* (m0)
2.0
2.0
1.6
2.0
1.1
2.5
0.3
-0.1
-0.1
-0.1
-0.6
0.3
0.4
1.6
0.8
CB1
↓
CB2
↓
CB3
↓
CB4
↓
VB1
↓
VB2
↓
VB3
↓
VB4
↓
E
(eV) 1.5
offset
m* (m0)
1.1
1.9
1.9
1.9
2.8
2.0
3.3
-0.1
-0.14
-0.25
-0.45
1.1
0.8
1.9
0.7
Table 1 caption:
Table 1 contains the bandstructure effective mass and band splitting data, extracted from
DFT calculations in literature, used here for the real material simulations, Mn2CoAl (10
bands),17 CrVZrAl (12 bands),18 CoVZrAl (10 bands),14 and Ni2FeO4 (16 bands).19 The
lattice parameters are 0.5798 nm, 0.641 nm, 0.626 nm and 0.833 nm for Mn2CoAl,
CrVZrAl, CoVZrAl and NiFe2O4, respectively. Energy gaps (EG) are -0.03 eV, 0.66 eV,
0.25 eV and 1.6 eV for Mn2CoAl, CrVZrAl, CoVZrAl and NiFe2O4, respectively. The
effective masses m* are extracted using a parabolic band approximation in units of electron
rest mass m0. Eoffset is the energy position of each band's minimum (in the case of CBs)
and of each band's maximum (in the case of VBs) with respect to the zero as denoted in
the DFT data. Each band is numbered in a progressive order starting from the one closest
to the EF = -0.1 eV that we set. These are the bands closer to EF, which are the ones involved
in transport at the considered biases. Upward (downward) arrows indicate the majority
(minority) spin direction.
26
Appendix
We show here the calculations of the interfacial voltage drop due to spin flip at the
interface between two ferromagnets A and B for the parallel (P) and antiparallel (AP)
situations. This voltage drop is responsible for the spin dependent contact resistance. These
calculations consider two ferromagnets in contact, but can be extended to describe the
interface between a ferromagnet and a non-ferromagnetic material which, however, carries
a spin polarized current. This can be the situation where a spin polarized current is injected
in a semiconductor in steady-state conditions.
We follow the approach proposed in Ref. [36] and in the Appendix C therein. We
place the interface at x = 0 so x < 0 for A and x > 0 for B. The 'up' arrows denote majority
spins and the 'down' arrows the minority ones. Note that we use the letter to indicate the
spin polarization SP for a more concise notation: SP ≡ 𝛽.
In general we have:
A = (1 + 𝛽A) 𝐽
𝐽↑
2
A = (1 − 𝛽A) 𝐽
𝐽↓
2
B = (1 + 𝛽B) 𝐽
𝐽↑
2
B = (1 − 𝛽B) 𝐽
𝐽↓
2
−
+
−
+
1
1
1
1
2𝑒𝜌A𝑙𝑠
2𝑒𝜌A𝑙𝑠
2𝑒𝜌B𝑙𝑠
2𝑒𝜌B𝑙𝑠
A 𝐾2
A𝑒𝑥 𝑙𝑠
A⁄
A 𝐾2
A𝑒𝑥 𝑙𝑠
A⁄
B 𝐾3
B𝑒−𝑥 𝑙𝑠
B⁄
B 𝐾3
B𝑒−𝑥 𝑙𝑠
B⁄
(A.1a)
(A.1b)
(A.1c)
(A.1d)
In the above equations the signs invert when magnetization switches.36 K2 and K3
are constants to be determined and the significance of the other symbols is reported in the
main text. Note that x < 0 for A and x > 0 for B.
Figure A1 sketches the current scheme at the interface for the case when the A and
B ferromagnets are oriented in parallel (top) and antiparallel (bottom). We always consider
A > B. x is the spatial coordinate of the unidirectional current flow, and the junction
interface is located at x = 0. J↑(↓)
A(B) indicates the current for the majority (↑) or minority
27
(↓) spin direction in materials A and B. The solid lines represent the current values so that
the overall flowing current J, given by the sum of the two components, is preserved in space.
The dotted line represents the value of half of the total current. Far from the interface, the
deviation from such a value of the majority/minority spin currents depends on the value of
. lS
A(B) is the spin diffusion length in A or B as noted and represents the characteristic
length of the exponential decay of the current.
In the parallel alignment case, because A > B, in A the two spin currents are
separated more than in B. Hence, at the interface the majority spin current has to decrease
and the minority spin current has to increase, thus, spin flip events are necessary. The
higher the difference in , the stronger the spin flip and the higher the voltage drop. If A
= B, the voltage drop would be zero and the current lines would be straight across the
junction.
In the antiparallel case, as B is oriented in the antiparallel configuration with respect
to A, the higher current component is for the minority spins (according to the notation in
A). Thus, the highest current component in A turns into the lowest current component in
B, the two spin components cross each other, and the current spin polarization inverts its
sign. This happens at the interface where the net spin polarization is zero. Because the
current value is always J, at the interface each component has J/2 value. In this case, the
spin flip events are stronger as they are responsible for the inversion of the spin polarization
of the current, and the related voltage drop is higher leading to a higher junction resistance.
28
Figure A1: The current scheme at the interface for the case when the A and B ferromagnets
are oriented in parallel (top) and antiparallel (bottom). x is the spatial coordinate of the
A(B) is the spin diffusion
unidirectional current flow, and the junction interface is located at x = 0. lS
A(B) indicates the current for the majority (↑) or minority (↓) spin direction in
length in A or B. J↑(↓)
A and B. The solid lines represent the current values, the dotted line represents the value of half of
the total current. Far from the interface, the deviation from such a value of the majority/minority
spin currents depends on the value of .
For the parallel case, we assume that each current component at the interface takes
a value that is the average of the value taken far from the interface:
A
𝐽↑(𝑥=0)
B
= 𝐽↓(𝑥=0)
=
lim
𝑥→−∞
A+ lim
𝐽↑
𝑥→∞
B
𝐽↑
2
(1+𝛽A)𝐽
2
=
+(1+𝛽B)𝐽
2
2
=
𝐽
2
2+𝛽A+𝛽B
2
≡
𝐽
2
𝑒𝑓𝑓
𝛽+
(A.2a)
A
𝐽↓(𝑥=0)
B
= 𝐽↓(𝑥=0)
=
lim
𝑥→−∞
A+ lim
𝐽↓
𝑥→∞
B
𝐽↓
2
(1−𝛽A)𝐽
2
=
+(1−𝛽B)𝐽
2
2
=
𝐽
2
2−(𝛽A+𝛽B)
2
≡
𝐽
2
𝑒𝑓𝑓
𝛽−
(A.2b)
Then, at the interface (x=0), for the A side:
(1 − 𝛽A) 𝐽
2
+
1
2𝑒𝜌A𝑙𝑠
A 𝐾2
A =
𝐽
2
𝑒𝑓𝑓 → 𝐾2
𝛽−
A =
𝐽
2
𝑒𝜌A𝑙𝑠
A(𝛽−
𝑒𝑓𝑓 − 1 + 𝛽A) =
𝐽
2
𝑒𝜌A𝑙𝑠
A∆𝛽 (A.3a)
29
and, for the B side:
(1 − 𝛽B) 𝐽
2
+ 1
2𝑒𝜌A𝑙𝑠
A 𝐾3
B = 𝐽
2
𝑒𝑓𝑓 → 𝐾3
𝛽−
B = 𝐽
2
𝑒𝜌B𝑙𝑠
B(𝛽−
𝑒𝑓𝑓 − 1 + 𝛽B) = − 𝐽
2
𝑒𝜌A𝑙𝑠
A∆𝛽
(A.3b)
where ∆𝛽 = 𝛽A − 𝛽B with ∆𝛽 > 0.
For the antiparallel case, at the interface, where the current components invert,
each of them takes the same value of J/2, in analogy with Ref. [36]:
𝐽↑(𝑥=0) = 𝐽↓(𝑥=0) =
𝐽
2
Then, at the interface (x=0), for the A side:
(1 − 𝛽A) 𝐽
2
+
1
A 𝐾2
A =
2𝑒𝜌A𝑙𝑠
and for the B side:
(1 + 𝛽B) 𝐽
2
+
1
A 𝐾3
B =
2𝑒𝜌A𝑙𝑠
𝐽
2
𝐽
2
→ 𝐾2
A = 𝐽𝑒𝜌A𝑙𝑠
A𝛽A
→ 𝐾3
B = −𝐽𝑒𝜌B𝑙𝑠
B𝛽B
(A.4)
(A.5a)
(A.5b)
In order to calculate the voltage drops at the interface we need to obtain the F(x)
functions, i.e. the spatial gradient of the spin dependent electrochemical potential divided
by the electron charge, which have the dimension of an electric field, expressed as in the
appendix C of Ref. [36]:
𝐹A(𝑥) = (1 − 𝛽A
2)𝜌A𝐽 +
𝛽A
A [𝐾2
𝑒𝑙𝑠
A𝑒𝑥𝑝 (
𝑥
A)]
𝑙𝑠
𝐹B(𝑥) = (1 − 𝛽B
2)𝜌B𝐽 −
𝛽B
B [𝐾3
𝑒𝑙𝑠
B𝑒𝑥𝑝 (−
𝑥
B)]
𝑙𝑠
30
(A.6a)
(A.6b)
We can now calculate F(x) – E0 that is the argument of the integrals that give the
interfacial voltage drop VIP/AP,36 where 𝐸0
A(B) = (1 − 𝛽A(B)
2
)𝜌A(B)𝐽 is the unperturbed
electric field (i.e., far from the interface).
∆𝑉𝐼 = ∫
+∞
−∞
[𝐹(𝑥) − 𝐸0]𝑑
𝑥
For the parallel case:
𝐹A(𝑥) − 𝐸0
A =
𝐹B(𝑥) − 𝐸0
B =
𝐽
2
𝐽
2
𝜌A𝛽A∆𝛽𝑒𝑥𝑝 (
𝑥
A)
𝑙𝑠
𝜌B𝛽B∆𝛽𝑒𝑥𝑝 (−
𝑥
B)
𝑙𝑠
For the antiparallel case:
𝐹A(𝑥) − 𝐸0
A = 𝐽𝜌A𝛽A
2 𝑒𝑥𝑝 (
𝑥
A)
𝑙𝑠
FB(𝑥) − E0
B = 𝐽𝜌B𝛽B
2 𝑒𝑥𝑝 (−
𝑥
B)
𝑙𝑠
Hence:
0
P = ∫
∆𝑉𝐼
−∞
𝐽
2
𝜌A𝛽A∆𝛽𝑒𝑥𝑝 (
𝑥
A) 𝑑
𝑙𝑠
(𝛽A∆𝛽𝜌A𝑙𝑠
A + 𝛽B∆𝛽𝜌B𝑙𝑠
B)
= 𝐽
2
and
+∞
𝑥 + ∫
0
(A.7)
(A.8a)
(A8.b)
(A.9a)
(A.9b)
𝐽
2
𝜌B𝛽B∆𝛽𝑒𝑥𝑝 (−
𝑥
B)
𝑙𝑠
𝑑𝑥 =
(A.10)
∆𝑉𝐼
AP = ∫ 𝜌A𝐽
0
−∞
𝛽A
+∞
𝑥
2exp (
A) 𝑑𝑥 + ∫
0
𝑙𝑠
2
𝜌B𝐽𝛽B
exp (− 𝑥
B) 𝑑𝑥 = 𝐽(𝛽A
𝑙𝑠
2𝜌A𝑙𝑠
A + 𝛽B
2𝜌B𝑙𝑠
B). (A.11)
Finally, the interface resistance per unit area can be estimated from VI/J.
31
|
1711.09531 | 1 | 1711 | 2017-11-27T04:43:28 | Arc Discharge Carbon Nanoonions Purification by Liquid-Liquid Extraction | [
"physics.app-ph"
] | Carbon nanoonions are novel carbon nanoestructures that have potential applications in fields like electronics and chemical catalysis. Here we report a very simple but effective method of purifying carbon nanoonions produced by submerged arc discharge in water based on the water-toluene liquid-liquid extraction. Purified and non-purified samples were characterized by atomic force microscopy, high resolution transmission electronic microscopy and Brunauer-Emmett-Teller gas adsorption isotherms method. Microscopy results showed a good purification and allowed the assessment of the particles diameter distribution. Specific surface area was measured showing a great increment from (14.7 +- 0.3) m2/g for the non-purified sample to (170 +- 3) m2/g for the purified sample. Average particles diameter was also assessed from the adsorption isotherms; the diameter values obtained by the three techniques were in good agreement being between 20 to 30 nm. | physics.app-ph | physics | Arc Discharge Carbon Nanoonions Purification by
Liquid-Liquid Extraction
F.J. Chao-Mujica1*, J.G. Darias-Gonzalez1, L. Garcia-Hernandez1, N. Torres-
Figueredo1,3, A. Paez-Rodriguez2, L. Hernandez-Tabares1, J.A.I. Díaz-Gongora3, L.F.
Desdin-Garcia1*
(1)-Centro de Aplicaciones Tecnológicas y Desarrollo Nuclear, Habana, Cuba, (2)- Centro de Estudios
Avanzados de Cuba, Valle Grande, La Lisa, Habana, Cuba (3)-Centro de Investigación en Ciencia
Aplicada y Tecnologia Avanzada. Instituto Politecnico Nacional, C. México, México.
*E-mail: [email protected], [email protected]
Key Word: Carbon Nanoonions, Submerged Arc Discharge, Purification, Liquid-
Liquid Extraction
Abstract
Carbon nanoonions are novel carbon nanoestructures
that have potential
applications in fields like electronics and chemical catalysis. Here we report a very
simple but effective method of purifying carbon nanoonions produced by submerged arc
discharge in water based on the water – toluene liquid-liquid extraction. Purified and
non-purified samples were characterized by atomic force microscopy, high resolution
transmission electronic microscopy and Brunauer-Emmett-Teller gas adsorption
isotherms method. Microscopy results showed a good purification and allowed the
assessment of the particles diameter distribution. Specific surface area was measured
showing a great increment from (14.7 0.3) m2g-1 for the non-purified sample to (170
3) m2g-1 for the purified sample. Average particles diameter was also assessed from
the adsorption isotherms; the diameter values obtained by the three techniques were in
good agreement being between 20 to 30 nm.
Introduction
Three decades has elapsed since the discovery of C60[1]. However, carbon
nanostructures remain a focal point of research. The versatility of carbon bonds allows
the existence of multiple nanostructures[2]. Among the new members of the family of
carbon allotropes are included the carbon nanoonions (CNO)[3] which are nanoparticles
formed by concentric closed layers of sp2 hybridized carbon atoms resembling the
structure of an onion. The nomenclature of these structures in the literature is very
variated, they are also named onion like carbon OLC, astralenes or multiwalled
fullerenes. These structures present great variations in their size, morphology and layers
structure though they can be easily classified into two great groups: polyhedral carbon
nanoonions (pCNO), which have faceted, polyhedral shapes and the spherical carbon
nanoonions (sCNO), which are almost spherical, well ordered and usually much
smaller[4].
CNOs are promising nanomaterials with unique properties that make them ideal
to a wide variety of applications[4] that's why many production methods have been
widely studied[5]. Nevertheless, the large scale production of CNOs still faces up big
technological and economic challenges. The methods which usually give the best results
in terms of purity and consistency of the properties are not an economically viable
alternative to produce large quantities of CNOs. The main expenses of these methods
are associated with the requirement of vacuum systems, inert atmospheres, complex
valve schemes and the use of catalysts which preparation is also a laborious task[6].
In addition to these methods, the submerged arc discharge (SAD) in water was
proposed[7] and is being investigated[8] for CNOs fabrication. This method is a simpler
and inexpensive alternative that bypasses the difficulties enumerated previously.
However, this method produces a wide variety of carbon nanoparticles consisting of
both sCNOs and pCNOs, wide-ranging multiwalled carbon nanotubes (MWCNT),
graphenes and large amorphous and graphitic impurities. Therefore, this production
method requires some sort of posterior purification/separation process to achieve the
degree of uniformity specifically required for any given application. In literature two
main approaches are followed; namely, the selective chemical destruction of unwanted
structures and the physical separation of the particles according to their properties.
The selective chemical destruction of impurities is based on the premise that the
amorphous carbon and other 'poorly ordered' or defective structures are more keen to
react with oxidant agents than the wanted, 'well ordered' nanostructures. Chemical
purification of CNOs have been reported by the annealing in air at temperatures over
400ºC[9] and using concentrated acids like nitric acid[9,10], nitric and sulphuric acid
mixtures[11] and phosphotungstic acid[8]. Other oxidant agents like the hydrogen
peroxide[12] have been also used in the purification of carbon nanotubes (CNT). These
methods are of limited effectiveness, usually going in detriment of the yield of the
desired particles and always introducing large amounts of oxygenated functionalities in
their surfaces.
The physical separation, on the other hand, uses the differences in size,
morphology and other physical properties of the particles in order to separate them.
There's little literature on the use of this approach with CNOs but there are plenty of
examples in the separation of other structures. Column chromatography it's being used
for the separation of fullerenes since their discovery[13,14]. Ultracentrifugation have
been used in the separation of CNTs[15–18]. Size exclusion chromatography have been
reported in the separation of SWCNTs[19–22], MWCNTs[23] and more recently carbon
quantum dots CQDs[24]. The selective dispersion in solvents or surfactants solutions of
SWCNTs[18,25–27] and MWCNTs have also been reported[27].
Here we report a very simple physical method to effectively separate SAD
produced CNOs from the other unwanted structures. This method is based on the water
– toluene liquid-liquid extraction and is thought to be readily scalable as part of any
inexpensive SAD CNOs large production scheme.
Experimental
A submerged arc discharge (SAD) synthesis station developed by our team was
used to synthesize the carbon nanoparticles. Our SAD system comprise three
fundamental elements: an electrode gap micro positioning system controlled by the arc
current measurement feedback, a ballast resistor for arc current stabilization and a data
acquisition system to record the magnitude of the relevant physical parameters in a
correlated way (see Figure 1). A detailed description of the experimental set up can be
found in[28]. Spectroscopic pure graphite rods, with an apparent density of = 1.69 ±
0.06 g·cm-3, were employed as electrodes (cathode: Φ = 12 mm, length = 20 mm;
anode: Φ = 6 mm, length = 100 mm). The electrodes are arced under 8 cm of 1.2MΩ
resistivity distilled water contained on a 5L double walled water-cooled stainless steel
synthesis chamber. The CNO production was performed with a constant current of I =
29.5 ± 0.6 A, a power of P = 662 ± 19 W and a gap between the electrodes of 1 mm
approximately.
Figure 1. SAD synthesis installation used to produce the carbon nanoparticles soot, power
source (1), reference amperimeter (2), ballast resistor (3), cooled stainless steel synthesis
chamber (4), cathode (5), anode (6), micro-positioning system (7), automated control unit (8)
and PC for data acquisition (9).
Synthesis products were allowed to rest for 24 hours. Then 50 ml of the water
loaded with dispersed particles and floating material from the synthesis chamber were
poured into a separation funnel. Then 50 ml of pure toluene, from Sigma-Aldrich, were
also added to the funnel. The funnel was vigorously agitated for 5 minutes and then it
was allowed to rest for other 10 minutes. After this process the funnel exhibits a
darkened toluene phase, a much clearer aqueous phase and the apparition of interfacial
black foam (see Figure 2). In this black foam is where the larger particles, like the
macro and microscopic graphite particles and MWCNT remain. These particles get
stuck in the middle being unable to disperse properly in the toluene phase due to their
large size, weight and/or aspect ratio, nor to precipitate to the bottom of the funnel
through the aqueous phase due to their high hydrophobicity.
Clean toluene
phase
Particle loaded
aqueous phase
a )
Toluene phase with
extracted particles
Larger particles in
interphase foam
Depleted aqueous phase
a
g
i
t
a
t
i
o
n
b )
Figure 2. Water-toluene extraction process, before (a) and after agitation (b).
Afterwards the loaded toluene phase is retrieved from the funnel. Some of the
as-obtained toluene loaded phase was separated to run the microscopy studies. The rest
was slowly heated to completely evaporate the toluene and to obtain a dry black
powder.
To make a comparison between the purified and the non-purified materials 50
ml of the as-synthesized water loaded with dispersed particles and floating material
were also slowly and completely dried to powder.
The TEM images of the as-synthesized products were acquired with a JEOL
JEM-2100 electron microscope and were processed with the software Gatan
Microscopy Suite version 2.3[29]. The Atomic Force Microscopy (AFM) was carried
out for the purified and the non-purified samples by the tapping method with a
SPECTRA microscope from NT-MDT, using NSG-10 tips, of monocrystalline Si doped
with Sb. The N2 adsorption isotherms were measured, also for the purified and the non-
purified samples, using ASAP 2050 equipment, Micromeritics technologies. Analysed
samples were subjected to a prior activation process in temperature regime in vacuum at
120°C for 1 hour. The pressure values were recorded with an instrumental error of 1
μTorr and amount adsorbed an instrumental error of 0.0001cm3/g.
Results and Discussion
Both purified and non-purified samples were analysed using AFM (see
Figure 3). In the non-purified sample, it can be observed large clusters of graphite
particles CNOs, MWCNT and other variated impurities. After the purification
procedure just well dispersed CNOs are observed. The good dispersion in the purified
sample allowed the analysis of individual particles giving that the CNOs average
diameter D from the AFM data was (30 9) nm.
Several HRTEM images were taken from the purified sample. From the TEM
images the shell shaped concentric layered structure of the CNOs can be easily
appreciated (see Figure 4). Processing of all of the TEM images taken gave an average
CNOs diameter of (20 8) nm. Despite that the results obtained by TEM and AFM are
informative they are not representative since their images depict less than 1 pg of
sample. Because of this, microscopy techniques alone are not capable of quantitatively
evaluating the properties and purity of the typical inhomogeneous mixtures obtained by
SAD.
a)
b)
Figure 3. AFM studies: a) Height diagram of the non-purified sample, b) Image of the purified
sample showing well dispersed CNOs
Figure 4. Representative HRTEM image of a small CNOs cluster in the purified sample
A bulk property like the specific surface area (SSA) is more suited to assess the
effectiveness of the proposed purification process. The Brunauer-Emmett-Teller (BET)
gas adsorption method with dinitrogen (N2) as the adsorbing gas was used for the
determination of the SSA of the samples. The SSA value for the as-produced materials
was only (14.7 0.3) m2g-1 while for the purified CNOs it reached (170 3) m2g-1. If it
is assumed that the sample consist of contacting nanoparticles close in size and with a
smooth surface, then average diameter D of the particles can be estimated as[30]:
𝐷 =
6
𝜌 ∙ 𝑆𝑆𝐴
(1)
Where is the density of the SSCNs. Using the value of (1.64 gcm-3) for the CNOs
reported elsewhere [13] it was calculated the average diameter D as 22 nm. The good
agreement between the values of diameter obtained from TEM (20 ± 8) nm and AFM
(30 ± 9) nm and the value estimated from the BET technique demonstrates that a high-
quality purification was achieved.
Figure 5Also the adsorption and desorption isotherms were analysed (see Figure 5).
The shape of the plot shows a typical type II behaviour[31]. This kind of isotherm is
characteristic of non-porous or macroporous adsorbents with unrestricted monolayer-
multilayer adsorption. This is in good agreement with the convex shape of CNOs and its
non-porous surface. The observed hysteresis loop can be associated with type H3 loops.
Type H3 loops are observed in aggregated particles forming slit like pores in the space
between them, which again describes very well the purified CNO sample.
Figure 5. The adsorption and desorption isotherms of N2 on the purified CNOs sample.
Conclusions
A method based on liquid-liquid extraction for the purification of CNOs
produced by SAD in water was presented. The main advantages of this method are its
simplicity, both logistically and procedurally, and its easy scalability. A large increment
in the SSA was achieved in the process from (14.7 0.3) m2g-1 to (170 3) m2g-1 for
the purified sample. The average diameter of the CNOs assessed from the SSA 22 nm
was similar to values measured by AFM (30 ± 9) nm and HRTEM (20 ± 8). The
adsorption and desorption isotherms show that most of the usable surface area is readily
accessible and that once adsorbed the gas can be quickly extracted. The relatively large
SSA and high extraction rates of CNOs make them a promising material for many
viable applications like the fabrication of electro-chemical double-layer capacitors
EDLC and its use as chemical catalyst.
Acknowledgements
The research was supported by AENTA-Cuba (PNUOLU-7-1, 2014) and by the
Program for Basic Research (N@NO-C, 2015), MES-Cuba. L.F. Desdin-Garcia wishes
to thank the SECITI (Edo. Mexico) and CLAF for generous support. N. Torres-
Figueredo and J.A. Apolinar-Galicia acknowledge support from the CONACYT-
Mexico. Authors
thanks Prof. E. Reguera (CICATA-IPN, Legaria, Mexico,
www.remilab.mx) for his support and encouragement.
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|
1803.05472 | 1 | 1803 | 2018-03-14T18:47:14 | NMR close to Mega-Bar Pressures | [
"physics.app-ph"
] | The past 15 years have seen an astonishing increase in Nuclear Magnetic Resonance (NMR) sensitivity and accessible pressure range in high-pressure NMR experiments, owing to a series of new developments of NMR spectroscopy applied to the diamond anvil cell (DAC). Recently, with the application of electro-magnetic lenses, so-called Lenz lenses, in toroidal diamond indenter cells, pressures of up to 72 GPa with NMR spin sensitivities of about 10^12 spins/(Hz^1/2) has been achieved. Here, we describe the implementation of a refined NMR resonator structure using a pair of double stage Lenz lenses driven by a Helmholtz coil within a standard DAC, allowing to measure sample volumes as small as 100 pl prior to compression. With this set-up, pressures close to the mega-bar regime (1 Mbar = 100 GPa) could be realised repeatedly, with enhanced spin sensitivities of about 5x10^11 spin/(Hz^1/2). The manufacturing and handling of these new NMR-DACs is relatively easy and straightforward, which will allow for further applications in physics, chemistry, or biochemistry. | physics.app-ph | physics | NMR close to Mega-Bar Pressures
Thomas Meier1*, Saiana Khandarkhaeva1, Sylvain Petitgirard1, Thomas Körber2, Alexander
Lauerer3, Ernst Rössler2, and Leonid Dubrovinsky1
1) Bayerisches Geoinstitut, Bayreuth University, Universitätsstrasse 30, 95447 Bayreuth, Germany
2) Fakultät für Mathematik, Physik und Informatik, Experimentalphysik II, Bayreuth University, Universitätsstrasse 30, 95447
3) Institut für Materialwissenschaften, Hochschule Hof, Alfons-Goppel-Platz 1, 95028 Hof
Bayreuth, Germany
*) [email protected]
Abstract
The past 15 years have seen an astonishing increase in Nuclear Magnetic Resonance (NMR) sensitivity
and accessible pressure range in high-pressure NMR experiments, owing to a series of new
developments of NMR spectroscopy applied to the diamond anvil cell (DAC). Recently, with the
application of electro-magnetic lenses, so-called Lenz lenses, in toroidal diamond indenter cells,
pressures of up to 72 GPa with NMR spin sensitivities of about 1012 spin/Hz1/2 has been achieved. Here,
we describe the implementation of a refined NMR resonator structure using a pair of double stage
Lenz lenses driven by a Helmholtz coil within a standard DAC, allowing to measure sample volumes as
small as 100 pl prior to compression. With this set-up, pressures close to the mega-bar regime (1 Mbar
= 100 GPa) could be realised repeatedly, with enhanced spin sensitivities of about 5x1011 spin/Hz1/2.
The manufacturing and handling of these new NMR-DACs is relatively easy and straightforward, which
will allow for further applications in physics, chemistry, or biochemistry.
thermodynamic conditions opens
Introduction
Varying
the
possibility of accessing low-energy configurations,
metastable or new states of matter, allowing the
investigation of electronic or structural instabilities in
solids. Thus, variation of pressure – that is directly
reducing atomic or molecular distances – turned out
to yield one of the most intriguing branches in
condensed matter sciences [1], [2].
One of the most popular devices to generate high
pressure is the diamond anvil cell (DAC) based on the
Bridgman concept of a piston-cylinder press type. It
was first introduced in the mid-fifties [3], and uses
two diamond anvils to push together and compress a
sample placed between their flattened faces. Since
these first pioneering works many developments
have been implemented such as the introduction of
gaskets to confine the sample, pressure scale,
pressure transmitting medium, laser heating. For the
past two decades, it has now become a near routine
to generate high pressure of 100 GPa
in the
laboratory, even reaching pressure found at the
centre of the Earth [4], [5] and beyond [6], [7]. The
success of the diamond anvil cells (DACs) resides in its
astonishing variability in both design and field of
application. To this end,
in-situ spectroscopic
methods in DACs are established, exploiting the
diamonds' transparency to a broad range of
wavelengths using lasers or X-Ray spectroscopy
techniques covering most of the available pressure
range. Other spectroscopic methods such as NMR or
EPR, however, appear to be almost impossible to
implement in DACs due to the following reasons: i)
Sample cavities
in DACs are typically tightly
surrounded by both diamonds and a hard, metallic
disc serving as a gasket. The gasket prevents the
sample from leaving the region of the highest
pressures, and provides so-called "massive support"
to the stressed diamond anvils [8]. ii) Due to the
necessarily small dimensions of the diamond anvils,
available sample space is often much less than 5 nl
before compression, which is further reduced when
pressures exceeding several GPa are targeted. An
application above 40 GPa, for example, requires an
initial sample cavity of about 100 µm diameter and
about 40 µm in height, amounting to about 350 pl. iii)
Finally, the sample cavity
is prone to plastic
deformation under compression, leading to a volume
reduction of the cavity of up to 50 % within a rather
Figure 1: Schematic design of the double stage Lenz lens (DSLL)
resonator. Only one half of the complete assembly is shown.
Both first and second stage LL are made from a 1 to 2 µm thick
layer of copper deposited using PVD and cut into the depicted
shape using a FIB. The driving coil, an 8-turn coil made from
100 µm copper wire is placed around the diamond anvil on the
metallic anvil support (not shown). For further details, see text.
to
field
in
toroidal diamond
indenter
losses of B1
small pressure range, depending on the choice of
gasket material and pressure medium [9].
Thus, a successful implementation of NMR - or pulsed
ESR for that matter – in diamond anvil cells, requires
the implementation of resonators with suitable sizes
and design. The first attempts have employed
complex coil arrangements, either placed on the
diamonds pavilion or over the whole diamond
assembly, but did not allow measurements for
pressures above 3 to 5 GPa [10]. A more promising
solution has been the implementation of RF micro-
coils directly into the high pressure sample chamber
with measurements reaching pressures of up to 8
GPa [11], [12] and maximal pressures as high as 20 to
30 GPa [13], [14]. However, these minuscule micro-
coils are extremely sensitive
the plastic
deformation of the sample cavity, often exhibiting
significant
strength and
subsequently NMR sensitivity by almost two orders of
magnitude within a single pressure run [15], [16].
Recently, the application of electro-magnetic Lenz
lenses
cells
demonstrated that NMR at significantly higher
pressures is not only feasible, but also comparatively
easy to implement [17]. The basic principle of these
magnetic flux tailoring devices is governed by Lenz's
law of induction, hence the name Lenz lens (LL).
Resonators using such LLs are typically driven by a
bigger excitation coil directly connected to the NMR
spectrometer. Following an RF pulse into the driving
coil, the LL picks up the RF field via mutual
inductance. The induced RF current is built up in the
outer winding of the LL resonator and deposited in an
inner region via a counter-winding, leading to a
significant amplification of B1
in a pre-defined
volume. This basic idea of course makes LL resonators
in DACs very attractive, as they can be used to focus
the RF B1 field where the high-pressure sample is
located.
However, the latest design introduced by Meier et al.
displayed some drawbacks. Its application in a DAC
requires two diamond anvils with different culet
diameter with, typically an 800 µm culet diamond on
the cylinder side facing a 250 µm culet diamond on
the piston side exerting the actual force. The main
advantage of this technique is that the metallic
rhenium gasket is buckled towards the much sharper
piston anvil, leaving the space close to the 800 µm
mostly untouched. This leaves enough room to place
the RF excitation coil on the pavilion of the base anvil
close to the culet, and thus to the 600 µm outer
diameter LL used in these experiments. However,
such anvil arrangements limit the accessible pressure
range [18], with anvils damaged at a much smaller
pressure range, often 60% below the standard
capabilities of DAC experiments. Here, we introduce
a new design and fabrication of RF resonators
allowing for a further increase in maximal pressures
and NMR sensitivity.
Structure and preparation of the DSLL-resonator
Figure 1 shows the principle design idea of the
double-stage LL (DSLL) resonator.
The pressure cells equipped with these resonators
were prepared as follows: After careful alignment of
two 250 µm culet diamond anvils, a 250 µm thick
rhenium disc was pre-indented to ~20 µm thickness.
Figure 2: Representative SEM images of the DSLL resonator
structure. The complete anvil can be seen on the left,
incorporating both 1st and 2nd stage Lenz lenses. The slit in the
1st stage LL on the anvils pavilion is about 15 µm at its smallest
point and increases a bit due to divergence of the gallium ion
beam during cutting. The close up (right) shows the 2nd stage LL
in detail. Bright spots on both photos are due to small dirt
particles.
A ~80 µm sample hole was cut in the centre of the
pre-indentation using an automated laser-drilling
system at BGI.
PVD coating of the diamonds has been performed
using a Dreva Arc 400
(manufacturer: VTD).
An ultrapure copper target from Chempur (99.999 %)
has been used. Argon (0.01 mbar) served as
processing gas for plasma sputtering. The power of
the Pinnacle magnetron power supply was set at 300
W. In order to achieve the required thickness of the
copper layer (~ 2 µm) the duration of the coating
process was set to 20 minutes. Using a focused ion
beam (Scios Dual beam from FEI), the shape of the
DSLL resonator was cut out from the almost
homogeneous copper layer, using a 30 kV beam
accelerator voltage and 65 nA gallium ion beam
current.
Figure 2 shows SEM
images during the DSLL
resonator preparation on one of the diamond anvils.
Additionally, the rhenium gaskets were covered with
a 1 µm layer of Al2O3 on both sides providing electrical
insulation between the lenses and the metallic
gasket.
Figure 3: RF magnetic field simulation of the resonator set-up. As
the assembly is symmetric, only the one half is shown.
excellent agreement with the found values from the
numerical simulation.
Estimating the sensitivity of this new resonator, the
common definition of the time-domain limit of
detection (LODt) as the minimal necessary number of
spins, resonating in a 1 Hz bandwidth and providing a
single-shot SNR of unity in the time domain, is used.
Figure 4 shows data from a solid echo train recorded
at 90 GPa of compressed H2O, well within the stability
field of ice X [22]. At pulse separations of 20 µs, a
single shot SNR of 39 recorded with a bandwidth of
2 MHz could be achieved. Considering a number of
approximately 3∙1016 1H nuclei present within the
100 pl cavity, a LODt of about 5x1011 spin/Hz1/2 was
found. Additional investigations of LODt over the
entire pressure range from 8 GPa to 90 GPa did not
display any deviations
in the spin sensitivities
exceeding 2% of this value. A thorough analysis the of
behaviour of high pressure ices VII and X will be
presented elsewhere [23].
Another important point for the characterisation of a
high pressure resonator is its ability to withstand high
mechanical stresses and deformation under load.
Figure 5 depicts both recorded Raman spectra at the
The excitation coils were prepared from 100 µm PTFE
insulated copper wire and consisted of 8 turns with a
diameter of 4 mm. Both coils were placed on the
backing plates of the diamonds, fully enclosing the
anvils. Subsequently, the prepared anvils were
aligned again in the DACs, and the cells were loaded
with distilled water and slightly closed to prevent
water leakage.
After the cells were closed, both coils were connected
in order to form a Helmholtz arrangement. The
loaded and pressurised cells were then mounted on a
home built NMR probe for standard wide-bore
magnets. Analysing the return-loss spectrum of the
resonator at 400 MHz, a quality factor of the
resonance circuit of about 40 was found.
All measurements were conducted at a magnetic field
of 9 T. The actual pressure in the sample cavity was
monitored using the first derivative of the pressure
dependent first order Raman vibron mode taken at
the centre of the diamonds' culets [19],[20].
Analysis of NMR performance and stability at
90 GPa
As a first step, numerical simulations of the RF B1 field
of the DSLL resonator have been conducted using the
FEMM software package[21]. Figure 3 shows the
simulation results for one half of the full assembly,
taking into account all parts of the high pressure
resonator, including both LLs placed on one anvil, one
half of the Helmholtz coil, and the electrically
insulated rhenium gasket. As can be seen, application
of the DSLL resonator leads to a focusing effect of the
B1 field strength due to significant reduction in the
final diameter of the resonator. In the 100 pl sample
cavity, the B1 field varies between 2.5 mT at the
centre up to 5 mT at the inner circumference of the
2nd stage LLs at 40 µm from the centre. A solitary
application of the Helmholtz coil would only amount
to magnetic fields of about 0.8 to 1.1 mT at the high
pressure centre (simulations are not shown).
Using RF nutation experiments at 90 GPa, an optimal
90° pulse length of tπ/2=2.5 µs at 10 W average pulse
power was found, leading to an actual B1 field
strength of B1 = π/(γntπ/2)= 2.3 mT, which is in
Figure 4: Recorded π/2-τ- π/2 solid echo train of high
pressure ice X at 90 GPa. The spectrometer was blanked off
for 4.6 µs after the second 90° pulse (grey area). The inset
shows a respective Fourier transform NMR spectrum
Figure 5: A) Raman spectra acquired at the diamond edge at the
center of the high pressure region in the DAC. Black arrows show
the position of the minima of the spectras' first derivative which
was used for pressure determination. B) X-ray absorption profile
along a fixed axis across the inner part of the DAC. Inset:
photograph of a 2nd stage LL from within a DAC pressurized to 90
GPa.
diamond edge, as well as X-ray transmission
measurements performed by scanning the X-ray
intensity along a fixed axis across the high pressure
region of the DAC. As can be seen, the diamond anvils
become highly stressed at increasing pressures,
leading to a significant line broadening of the Raman
vibron mode. The transmission X-ray profile shows
both diamond anvils clearly cupped at 90 GPa – as can
be seen by the increased X-ray absorption in the
region between the sample cavity and the culet,
which is at about 25-125 µm. In fact, the equality of
X-ray intensity at the culet edge and within the
sample cavity signifies the diamonds almost touching:
further increase of pressure would not be possible
without diamond breakage. Interestingly, both the
cavity diameter as well as the inner diameter of the
2nd stage LLs at the diamond culet did not decrease
significantly from their initial values.
Both 2nd stage LLs where found to be intact even at
90 GPa pressure at the centre of the DAC, as can be
seen in the photograph in figure 4B. This is in stark
contrast to the previously used LLs made from 5 µm
thick Au-foil, all of which displayed pressure
dependent deformation at pressures exceeding
about 19 GPa.
Discussion and Conclusions
The presented DSLL-resonator for high-pressure NMR
applications exhibits several significant advances
compared to previous set-ups. First, these novel
resonators allow for a stable and safe use in a
standard DAC equipped with two diamonds of
identical culet diameters. As electro-magnetic
coupling between excitation coils, 1st stage, and 2nd
stage LLs works sufficiently well, it may be applicable
for even smaller culet faces, opening the possibility
for NMR at even high pressures. This conjecture
might be confirmed, following some geometric
reasoning:
Preparation of the gasket typically follows some
empirical rules found to maximise the DAC's stability
under load, namely that the diameter of the sample
chamber should be around 1/3 x d, whereas the pre-
indentation is usually as flat as 1/6 x d, where d is the
culet diameter of the diamond anvils. This sets some
upper limits for the sample volume V0 prior to
compression, i.e. V0 ≈ 1.5 ∙ 10-2 ∙ d3.
Empirical maximal pressures in a standard DAC for
non-NMR applications was found to be proportional
to ~d-2 up to about 1.5 Mbar, with a flattening-out of
this behaviour to roughly a ~d-1/2 dependence above
this pressure. The inset in figure 6 illustrates these
dependencies.
Obviously, the use of smaller diamond anvil culets will
inevitably reduce both diameter and height of the
sample cavity. In contrast, the diameter of the
counter winding as well as the separation between
both 2nd stage LLs will also be reduced, leading to a
further increase in B1. Therefore, the inevitable loss in
SNR due to reduced amount of sample for smaller V0
and maximal pressures, will be compensated by an
increase in LODt due to this proximity boost.
The deduced spin sensitivities of about 1011 spin/Hz1/2
mark a major advancement in this application field,
which is illustrated in the main frame of figure 6.
Here, we summarized extracted data on LODt from
the majority of all known high-pressure NMR set-ups,
and compared it to their pressure stability.
Figure 6: Main frame: NMR limits of detection at increasing
pressures for several different high pressure NMR set-ups. For
more information, see text. Right inset: dependence of sample
volume V as well as the maximal achievable pressure for
different diamond culet diameters d.
with
from
sensitivities
One of the most widely used applications for high
pressure NMR is bio-chemistry, in particular protein-
folding dynamics [24]–[30], using clamp cells which
allow for a significantly lower pressure compared to
standard DACs. LODt values in these cases often range
between 1 - 3∙1019 spin/Hz1/2 with maximal pressures
of about 1 GPa. Within DACs, however, three distinct
groups can be identified from figure 6: external,
integral, and hybrid resonators.
External resonators encompass all set-ups introduced
from the end of the 1980s to 1998, that is resonators
which are either placed solely on the pavilion of the
anvils [31]–[35] or single turn cover inductors on top
of the rhenium gaskets[36], exhibiting LODt of about
8x1018 to 2x1017 spin/Hz1/2 at pressures as high as
13 GPa[37]. Internal resonators, on the other hand,
comprise micro-coils placed directly into the sample
chamber
about
1x1016 spin/Hz1/2 to 6∙1013 spin/Hz1/2 depending on
the degree of coil deformation within each pressure
run.
The group of hybrid resonators ("hybrid" because
both external and internal resonators are used
together), comprise the recently introduced single LL
in a toroidal diamond indenter cell as well as the
DSLL-resonator in a DAC, introduced here. From
figure 6 it is obvious that LODt is not only increased by
almost eight orders of magnitude compared to clamp
cell NMR sensitivities but they were also found to be
exceedingly stable over the entire pressure run,
originating in the flat, almost two-dimensional design
of the LLs used.
Finally, the preparation process of these novel
resonators could be simplified and developed further
up to a point enabling a larger number of NMR
laboratories to use high pressure NMR as an
convenient everyday investigative tool.
Acknowledgements
We thank Nobuyoshi Miyajima and Katharina
Marquardt for provision of the FIB, and help with the
ion milling (grant number: INST 90/315-1 FUGG). We
are also very thankful for the help of Sven Linhardt
and Stefan Übelhack for manufacturing the NMR
probe and pressure cell components. The authors,
T.M., S.P., and L.D., were funded by the Bavarian
Geoinstitute through the Free State of Bavaria. S.K.
was funded through the German Research Society
(DU-393/13-1). PVD has been performed at Hof
University of Applied Science: Prof. Dr. Jörg Krumeich,
Dipl.-Ing. Katrin Huget and M. Eng. Stephan Paulack
are gratefully acknowledged.
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|
2002.07086 | 1 | 2002 | 2019-12-19T14:01:45 | Electrostatic Near-Limits Kinetic Energy Harvesting from Arbitrary Input Vibrations | [
"physics.app-ph"
] | The full architecture of an electrostatic kinetic energy harvester (KEH) based on the concept of near-limits KEH is reported. This concept refers to the conversion of kinetic energy to electric energy, from environmental vibrations of arbitrary forms, and at rates that target the physical limits set by the device's size and the input excitation characteristics. This is achieved thanks to the synthesis of particular KEH's mass dynamics, that maximize the harvested energy. Synthesizing these dynamics requires little hypotheses on the exact form of the input vibrations. In the proposed architecture, these dynamics are implemented by an adequate mechanical control which is synthesized by the electrostatic transducer. An interface circuit is proposed to carry out the necessary energy transfers between the transducer and the system's energy tank. A computation and finite-state automaton unit controls the interface circuit, based on the external input and on the system's mechanical state. The operation of the reported near-limits KEH is illustrated in simulations that demonstrate proof of concept of the proposed architecture. A figure of $68\%$ of the absolute limit of the KEH's input energy for the considered excitation is attained. This can be further improved by complete system optimization that takes into account the application constraints, the control law, the mechanical design of the transducer, the electrical interface design, and the sensing and computation blocks. | physics.app-ph | physics | Electrostatic Near-Limits Kinetic Energy
Harvesting from Arbitrary Input Vibrations
Armine Karami, J´erome Juillard, Elena Blokhina, Philippe Basset and Dimitri Galayko
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Abstract -- The full architecture of an electrostatic kinetic
energy harvester (KEH) based on the concept of near-limits
KEH is reported. This concept refers to the conversion of
kinetic energy to electric energy, from environmental vibrations
of arbitrary forms, and at rates that target the physical limits
set by the device's size and the input excitation characteristics.
This is achieved thanks to the synthesis of particular KEH's mass
dynamics, that maximize the harvested energy. Synthesizing these
dynamics requires little hypotheses on the exact form of the
input vibrations. In the proposed architecture, these dynamics
are implemented by an adequate mechanical control which is
synthesized by the electrostatic transducer. An interface circuit
is proposed to carry out the necessary energy transfers between
the transducer and the system's energy tank. A computation
and finite-state automaton unit controls the interface circuit,
based on the external input and on the system's mechanical state.
The operation of the reported near-limits KEH is illustrated in
simulations which demonstrate proof of concept of the proposed
architecture. A figure of 68% of the absolute limit of the KEH's
input energy for the considered excitation is attained. This can
be further improved by complete system optimization that takes
law, the
into account the application constraints, the control
mechanical design of the transducer, the electrical
interface
design, and the sensing and computation blocks.
Index Terms -- Kinetic energy harvesting, capacitive transduc-
ers, control, power electronics, microelectromechanical systems
I. INTRODUCTION
K INETIC energy harvesting is increasingly investigated as
a candidate technique to replace or increase the lifespan
of batteries of miniaturized electronic systems. It consists
in converting part of the mechanical energy of the system's
surroundings vibrations to electrical energy, using a dedicated
subsystem called a kinetic energy harvester (KEH). The size
and mass of KEHs are small, so that the energy conversion
does not
impede with the system's surroundings, and yet
the amount of harvested energy is enough to supply a low-
power electronic system such as a wireless sensor. Typical
applications include healthcare or structure monitoring.
A KEH is composed of a mechanical subsystem whose
role is to capture kinetic energy from the vibrations that it
is submitted to, and of an electromechanical subsystem whose
role is to convert the captured mechanical energy into electrical
energy and to supply a load. The mechanical part is at least
composed of an inertial mass. The electromechanical part itself
can be seen as a combination of a physical transduction device
A. Karami
is with
chair
of
econophysics
systems,
(e-mail: [email protected]).
Polytechnique,
LadHyX,
the
Ecole
and
Palaiseau,
complex
France
D. Galayko is with Sorbonne Universit´e, LIP6, F-75005, Paris, France
J. Juillard is with GEEPS, CentraleSuplec, University of Paris-Sud, France.
E. Blokhina is with the School of Electrical, Electronic and Communica-
tions Engineering, University College Dublin, Ireland.
P. Basset is with Universit´e Paris-Est, ESYCOM, ESIEE Paris, France.
(e.g., a piezoelectric, electromagnetic or electrostatic trans-
ducer) associated with an electronic circuit that is responsible
for the electrical conditioning of the transducer. This interface
is also responsible for putting the energy in a form that can
be used by the load (e.g., suitable DC voltage supply).
The first works addressing inertial, one degree of freedom
(1-dof) KEHs were focused on maximizing the amplitude
of the motion of the mobile mass. Resonant mechanical
systems have often been considered, and that restricted the
applications of small-scale KEH to the cases where the source
of the kinetic energy is narrowband vibrations of rather high
frequencies (tens up to thousands hertz). The general effort
has then been to improve the performances of KEHs, both
in terms of converted energy and compatibility with low-
frequency or large-bandwidth vibrations. To this end, the pur-
poseful introduction of mechanical nonlinearities was studied.
These include, for example, bistable KEHs [1], or KEHs
using frequency-up conversion [2]. The optimization was often
done for vibration inputs of harmonic form, although some
works report their study under white-Gaussian noise inputs
[3]. In these approaches, little attention was given to further
optimization through the electrical
the
electromechanical nature of a KEH system makes it inevitable
to take it
into account for full analysis and optimization.
That is why for all types of transduction mechanisms, KEHs
with smart electrical interfaces were studied [4] -- [10]. These
interfaces were designed to optimize the energy conversion,
while at the same time providing the harvested energy to the
load in a suitable form. The KEHs using these interfaces are
often optimized for harmonic inputs, although some works
study their operation for other types of inputs [11] -- [16].
interface. However,
In addition,
theoretical works investigated the physical
limits of kinetic energy conversion. Some of these works
considered generic KEH architectures, yielding fundamental
limits [11], [17]. Others works analyzed specific transduction
mechanisms and interface electronics [12], [18] and yielded
more conservative limits. In between,
the important work
[19] encompasses a large range of transduction mechanisms
and conditioning electronics and proposed a categorization of
a large part of the KEH architectures that were previously
reported or reported since then. Most of these works studied
the limits for specific types of input vibrations, e.g., harmonic
[12], [17], bi-harmonic, frequency swept [11], or even white-
Gaussian excitations for the specific case of KEH architectures
using linear transduction mechanisms and resistive load [3].
The obtained limits depend on the device size as well as the
characteristic parameters of the input excitation.
All
these works noticed that
the converted energy can
be increased by appropriate choice of the dynamics of the
mobile mass. Moreover, there exist an absolute upper limit
of the power which can be harvested. This limit and the
corresponding optimal dynamics, which we describe in sec. II,
are independent of the transduction mechanism and are only
determined by the system size and the profile of the external
vibrations. The work [20] was among the first studies that
explicitly reported on an architecture attempting to implement
such dynamics, but the constrained form of the control was
not suited to maximize the converted energy from inputs of
irregular form. Later in [21], the same group mentioned that
a similar system that would dynamically adapt to the input
excitation is needed in order to approach the limits of energy
conversion from more general types of input excitations. Such
a system was sketched more recently in [22]. It uses a
dedicated control force created by magnetic transduction to
implement the needed dynamics for a piezoelectric KEH. This
latter work also shows how such controlled KEHs outperform
resonant-based and bistable nonlinearity-based KEHs in the
case of irregular input vibrations. Yet, the quantitative descrip-
tion of the control and of the needed electrical interface was
not reported in this study and is yet to be addressed.
In this paper, we address a quantitative description of a
system implementing the optimal dynamic for the mobile
mass, with the aim to approach the physical limit of the
conversion energy. We will refer to such a KEH as a "near-
limits KEH". We propose an its implementation based on
electrostatic transduction. Although other type of transduction
may also be suitable for such a system, we beleive that
electrostatic transduction is better compatible with low scale
devices (through the MEMS technologies) and offers more
precise control of the mechanical forces. The optimal dynam-
ics are synthesized directly by the transducer force used for
the electromechanical energy conversion, using an appropriate
control force associated with a suited interface circuit.
The plan of the paper is as follows. First,
in Sec. II,
we outline the principles of near-limits KEH. Then, in Sec.
III, we detail the electrostatic near-limits KEH architecture.
In Sec. IV, we report the results of the electromechanical
simulation of the proposed architecture. The results illustrate
its operation submitted to realistic vibrations recorded on a
running human.The proposed architecture is validated by a
simulation of a hybrid behavioural/Spice model.
II. PRINCIPLES OF NEAR-LIMITS KEH
This section is devoted to summarize the theoretical founda-
tions of the near-limits kinetic energy harvesting. The sec. II-A
derives the mobile mass dynamics maximizing the converted
energy in the context of an ideal lossless KEH model. This
derivation is essentially the same as what is reported in [23]:
we report it again for the sake of completeness. In sec. II-B
we complete the near-limit KEH model by discussing on the
maximization of the harvested energy in the presence of losses.
A. Statement of the principles for an idealized KEH model
A generic, lineic, inertial kinetic energy harvester (KEH)
system is depicted in Fig. 1. The KEH is composed of a
mass which is supposed to be free to move along the 0x axis
attached to the vibrating frame (the vibrating box), and xptq
denotes its position along this axis at time t, as depicted in the
2
Fig. 1. A generic model for a 1-dof kinetic energy harvester.
figure. The mass is attached to the frame's end-stops using a
suspension modeled as a linear spring of stiffness k. The spring
is added in the generic "mass in a box" model to account for
the suspension of the mass in the 1-dof system. The box in
which the mass lies has limited dimensions, and as a result,
the mass displacement inside the frame is constrained between
positions xM. The box has an acceleration of ´Aextptq:
hence, when the 2nd Newtonian law is written in the Ox frame,
the mass is submitted to an input force ξptq " mAextptq.
The mass is also submitted to a force uptq. In this generic
model, all that is assumed is that this force is of electrical
origin. It is hence responsible for the mechanical to electrical
energy conversion. The details of its implementation depend
on the electrical to mechanical transduction mechanism that
is used to generate it (e.g., electromagnetic, piezoelectric,
electrostatic), as well as on the actual mechanical and electrical
subsystems of the KEH (see Sec. II-B).
The ODE describing the dynamics of this system is:
m:xptq " ξptq ` uptq ´ kxptq.
(1)
ż
ż
where the overdot denotes differentiation with respect to time.
The system's energy balance reads:
upsq 9xpsqs.
ξpsq 9xpsqs. " ´
` 1{2 pmp 9x2ptq ´ 9x2pt0qq ` kpx2ptq ´ x2pt0qqq.
(2)
t0
t0
t
t
The LHS is the input energy in the system, and the first term
of the RHS is the converted energy from the mechanical to the
electrical domain by the force uptq, or converted energy. Let
us also suppose that xptq ď xM. In this context, choosing a
force uptq that maximizes the converted energy:
$''&''%max
u
ş
´
´
¯
upsq 9xpsqs.
t
t0
xptq ď xM
s.t. m:xptq " ξptq ` uptq ´ kxptq
(3)
ş
t
t0
ξpsq 9xpsqs., as (2)
is done by maximizing the input energy
suggests. This, in turn, is done by finding the mass trajectory
xξptq that maximizes this integral for any input excitation ξptq.
Let us first seek the trajectory xξptq maximizing the input
ż
energy within the set X of piecewise-differentiable, bounded
functions. Let us rewrite
ż
ξpsq 9xpsqs. " ´
9ξpsqxpsqs. ` ξptqxptq ´ ξpt0qxpt0q (4)
The input excitation and the mass position in the box being
bounded, the two last terms of the RHS are bounded. Hence,
t0
t0
t
t
end-stop(frame)end-stop(frame).springspringframeaccel. t
t0
ż
9ξpsqxpsqs. ď xM
t
max
xPX
t0
‚,
ξ2n`1
(5)
In the rest of the paper,
our goal being to optimize the mean converted power, we just
need to maximize the integral on the RHS.
the consecutive local extrema
of ξptq are represented by the sequence pξnq. The corre-
sponding times at which they happen are represented by
ş
the sequence ptnq. The maximums are of even indexes
pξ2nq, while the minimum have odd indexes pξ2n`1q. As
´
t
t0
ÿ
9ξptqt., it comes that:
ÿ
ş
#
ξpsq 9xpsqs.
" 2xM
ξ2n ´
xM, t P st2n ; t2n`1r,
´xM, t P st2n`1 ; t2pn`1qr
tt2nďtu
tt2n`1ďtu
attained at: xξptq "
The motion xξptq lacks regularity, but a smooth trajectory
pointwisely approaching it will result in the input/converted
energy approaching the maximum. Such a trajectory has to
switch from one end-stop xM to the other end-stop ¯xM as
soon as a maximum/minimum of the input force is detected.
This switching has to be done as fast as possible, to happen
while the external force is constant and equal to the detected
maximum/minimum value. In addition, the mobile mass must
arrive at the other end-stop with ideally zero velocity. If the
mass arrives at the other end with a non-zero velocity, the
outcome will depend on the physical implementation of the
end-stop (the model (1) supposes constrained motion with no
definition of the dynamics out of the displacement limits).
Bouncing against the end-stop can make the trajectory deviate
from the trajectory xξptq. Also, if the collisions with the end-
stops are inelastic, some energy will be wasted. Finally, in
between a maximum and a minimum (resp. a minimum and
a maximum) of ξptq, the mobile mass must be kept still at
´xM (resp xM). An example summarizing these requirements
is depicted in Fig. 2. From now on, xξptq will denote this
smoothened target trajectory.
Fig. 2. Example of a smooth energy-maximizing trajectory xξptq for an
example of input ξptq. Two position switching events are time-magnified.
In the setting of this simple model, maximizing the con-
verted energy from a given input excitation is done by im-
plementing the control force uptq that results in xξptq. The
description of an electrostatic KEH architecture implementing
this control, while recovering the converted energy, is the
objective of this paper. Before proceeding to the details of the
3
architecture in Sec. III, the following discussion highlights the
differences between the strategy just presented and the formal
problem of harvested energy maximization.
B. On the difference between near-limits KEH and the formal
problem of maximization of the harvested energy
In the hypothesis of (1), the input and converted energy
are equal. Thus, the dynamics maximizing the input energy
also maximize the converted energy. Yet, a realistic model has
to include mechanical friction phenomena, e.g., air damping
or inelastic collisions with the end-stops, due to possible
inaccuracy in the control
implementation. This makes the
converted energy smaller than the input energy.
Moreover, the ultimate goal of KEH is not the mere maxi-
mization of the converted energy, but rather of the harvested
energy. We define this quantity as the part of the converted
energy that ends up in the system's electrical energy tank,
in a form usable by an electrical load. The harvested energy
is smaller than the converted energy, because of the dissi-
pation phenomena that occur in the electrical domain. These
losses are the source of the control generation cost. Indeed,
to implement uptq, the system must invest energy from its
electrical energy tank into the transducer. This energy transfer
is done using an interface circuit. This circuit has sources
of energy dissipation that result in the loss of part of the
invested energy during the transfer. The same phenomenon
occurs when the interface circuit transfers the invested energy
from the transducer back to the energy tank with the overhead
of converted energy. Also, the interfacing circuit can be driven
by a control unit whose decisions are computed as a function
of the desired uptq, as well as, at least, the input ξptq. The
energy consumed by this computing and sensing is a part of
the dissipation of the system.
Given these considerations, the trajectory xξptq only results
in the maximum of harvested energy in the case of an
idealized system. If the energy dissipation sources are taken
into account, then not only the harvested energy is decreased
by the amount of dissipated energy, but also xξptq does not
correspond to the trajectory maximizing the harvested energy.
For the sake of completeness and to highlight the differences
with the strategy derived in Sec. II-A, let us give a general
formulation of the problem of harvested energy maximiza-
tion. A KEH system implements the force uptq through a
transduction mechanism that depends on the mechanical and
electrical states of the KEH. The electrical state refers to the
currents I, and voltages V, of the electrical circuit connected
to the transducer. This can be summarized by a relation
uptq " ΦpI, V, 9x, xq, where Φ describes a particular trans-
duction mechanism. A force uptq is then implemented by ad-
equately controlling the currents and voltages of the interface
circuit to achieve the energy transfers between the electrical
energy tank and the transducer. This interface circuit can be
described by an implicit relation Ψp9I, 9V, V, I, 9x, x, tq " 0.
Here, Ψ consists in a set of differential-algebraic relations that
describe the circuit's evolution, constrained by the electrical
network and components laws. The time dependence accounts
for the control of the interface resulting in uptq. The mechani-
cal suspension can be represented by a force ´kpxqx, possibly
b)a) upsq 9xpsqs. ´ CepΨq ´
t
t0
t
t0
Ψ
.
ş
pPq
$''&''%max
including nonlinear stiffness effects. Dissipative phenomena
in the mechanical domain can be represented by a force
´cp 9x, xq 9x. Both kpxq and cp 9x, xq are likely to be piecewise-
defined to model both the region where the mass is within
xM and the collision between the mass and the end-stops
[24]. Note that some works reported power-extracting end-
stops [25], which could possibly relax the requirements on the
control uptq. The control generation cost CepΨq arises from
the aforementioned dissipation phenomenon in the electrical
domain. It depends on the chosen control function and on
the electrical interface used to implement it, all of which are
described by Ψ.
Given the previous notations and an input ξptq, the generic
problem of harvested energy maximization is the selection,
through the electrical interface described by Ψ, of the adequate
control. The formal problem reads:
ş
t´
cp 9x, xq 9xs.u
m:xptq " ξptq ` uptq ´ kpxqxptq ´ cp 9x, xq
u " ΦpI, V, 9x, xq, Ψp9I, 9V, I, V, 9x, x, tq " 0
Solving the problem pPq, given a predetermined transduc-
tion mechanism, consists in choosing the optimal electrical
subsystem Ψ and "simultaneously", through it, the optimal
control policy uptq. Different special cases of the problem
pPq for various types of inputs were recently reported in
the literature. For example, in [26], the problem is solved
in the setting of a determined form of input excitation, with
a constrained electrical interface (resistive load) and a linear
transduction mechanism. The control is done through the load
value and the mechanical stiffness. The works in [23], [27] also
report on different optimization and optimal control problems
that are particular cases of the problem pPq.
Yet, designing a KEH maximizing the harvested energy --
in the sense that it implements a solution to the problem pPq
-- requires, in general, that ξptq is known is advance. A simple
example of this is reported in [17] where a linear mechanical
friction force is taken into account. In this case, the shortfall is
only in the converted energy relatively to the input energy, as
the electrical interface that could further decrease the harvested
energy is not considered. Even in this simple case, the paper
shows that the dynamics maximizing the converted energy can
only be implement if the form of the external input is known
(a harmonic excitation in the case of the cited study).
In contrast, the present work is concerned with implement-
ing an architecture achieving the control strategy described
in II-A. This can be done without a priori knowledge on the
exact form of ξptq. This is because it relies on the synthesis of
the motion xξptq, which merely requires a real-time detection
of the extrema of ξptq. This detection can be done by a causal
system, provided that (i) the detection is fast enough so that
the value of ξptq is still close enough to it (ii) the resolution of
the sensor used to measure ξptq is high enough. In practice, the
next sections will show that some limited information about
the input is necessary to correctly synthesize xξptq.
Although our strategy does not yield the upper limit of
harvested energy, we can suppose as a working hypothesis
ş
4
t
t0
that this limit can be approached by the strategy of imple-
cp 9x, xq 9xs. approach zero.
menting xξptq as the costs Ce `
This reasonable hypothesis is supported by [17], where the
trajectory maximizing the converted energy becomes closer to
xξptq (for a harmonic ξptq) as the damping parameter becomes
sufficiently small. Thus if we manage to make the control
generation cost to implement xξptq small, the harvested energy
will approach the upper limit yielded by the problem pPq.
III. ARCHITECTURE OF AN ELECTROSTATIC NEAR-LIMITS
KINETIC ENERGY HARVESTER
Fig. 3. Overview of the architecture for a near-limits electrostatic KEH.
In this section, the architecture of a near-limits KEH based
the
on electrostatic transduction is described. Specifically,
KEH implements a control synthesizing the trajectory xξptq
with limited hypotheses on the input excitation. The architec-
ture comprises an electrical interface that is suited to carry out
the necessary energy exchanges between the KEH's electrical
energy tank and the electrostatic transducer to synthesize the
control whilst recovering the converted energy. The electrical
interface is driven by a sensing and computation unit which
revolves around a finite-state automaton. A block-diagram of
the proposed architecture is depicted in Fig. 3.
A. Electrostatic transducer
An electrostatic electromechanical transducer is a variable
capacitor. In our case, we are interested in transducers whose
change of geometry make their capacitance vary. This change
of geometry happens thanks to the movement of one of
the mobile electrodes of the transducer. This movement is
constrained in amplitude between the end-stops, and on one
axis, as in the generic model of Sec. II-A.
In this context, the transduction is materialized by a mechan-
ical force between the transducer's electrodes that depends
on the voltage across them. It is supposed that one of the
electrodes is fixed to the frame, the other being attached to
the mobile mass of the KEH. The transducer force acting on
fixed fixedelectrode electrodeposition sensoraccelerometerend-stopelectricalenergy tanktransducercomputation unitinterface circuitspringspring 5
the mobile mass has the expression:
uptq " 1
2
V 2ptq BC
Bx
pxptqq
(6)
The term BC{Bx depends on the transducer's geometry, and
V ptq is the voltage across the transducer.
To generate forces of both signs on the axis pOxq, a dif-
ferential transducer composed of two electrostatic transducers
C` and C´ must be used. Each of these transducers has one
of its electrodes attached to the frame's ends, and the other
electrode attached to the KEH's mass. A schematic view of
this geometry is depicted in Fig. 3. The force u is then the
superposition of the two forces:
with
uptq " u`ptq ´ u´ptq
V`2ptq BC`
Bx
V´2ptq BC´
Bx
u`ptq " 1
2
u´ptq " 1
2
pxptqq
pxptqq
Let us define κ " 0S{d0
The geometry that we choose for our near-limits KEH
is a gap-closing geometry. This means that the capacitance
variation of the transducers results from their mobile electrode
sliding along the axis that is normal to their plane (also called
gap-closing or out-of-plane geometry).
2, a constant that depends on the
device's geometry: the gap d0 at x " 0,
the total surface
of the capacitance (transducer overlapping area) S, and the
dielectric constant 0. Also, from now on, let us substitute all
positions with their value normalized by dividing by d0, i.e.,
substitute xptq{d0 Ñ xptq, xM{d0 Ñ xM. The capacitance of
a gap-closing transducer is hence expressed as:
Cpxptqq "
κd0
p1 ¯ xptqq ,
and hence:
uptq " 1
2
V2ptq
κ
p1 ¯ xptqq2 ,
(9)
(10)
From (10), it comes that with gap-closing electrostatic trans-
ducers, when the charge of C is kept constant
through
the displacement of
the corre-
sponding transducer generates on it is constant. Specifically,
if at position xpt0q " x0,
the transducer is charged with
Qpt0q " Vpt0qCpx0q, then the transducer force is constant
across the displacement, as long as Qptq remains constant
the force that
the mass,
@t, t0 ď t ď t1 ùñ uptq " upt0q " κ
2
V2pt0q
p1 ¯ x0q2
t1 " inf t t ě t0 Qptq ‰ Qpt0qu
(11)
(12)
This is referred to as the "constant-charge operation". The
corresponding energy in Cpx0q when it is charged reads:
W0 " upt0qd0p1 ¯ x0q
B. Control strategy
the trajectory xξptq described in Sec. II-A.
Let us now describe the control force uptq that synthesizes
pQq
(7)
(8)
Fig. 4. Detailed waveforms illustrating the proposed control strategy, on two
examples of external force local maximum.
1) Description of the control: The chosen control scheme
can be explained as follows. Suppose that initially, the mass
is located at ´xM and ξptq is increasing. The control uptq
sustains a force value of ´umax so that the mass, on which
ξptq and ´kxptq act, is kept at ´xM (thanks to the reaction
force of the end-stop). Then, as soon as a maximum of ξptq
is sensed, two cases are possible: either the value of the
maximum of ξptq is positive, either it is negative. The first
case is depicted in Fig. 4.a. In this case, the force uptq is
removed (set to zero), and the mass travels towards `xM under
the action of ξptq, that is supposed varying slowly enough so
that its value is equal to the value of the local maximum ξ0.
When the mass reaches a given position ´xcom P s´xM ; xMr
(normalized by division by d0), the control force uptq takes a
constant value, working negatively on the mass. This value is
computed so that the mass arrives at `xM with zero velocity.
The other case is depicted in Fig. 4.b, where the value ξ2
of the maximum of ξptq is negative. In this case, the force
uptq first takes a constant value, and works positively on the
mass so that it travels towards `xM. When the mass reaches
xcom, the force uptq is removed. The value the positively
working force is chosen so that the mass reaches `xM with
zero velocity. In both cases, as soon as the mass reaches
´xM, the control force takes the value umax to keep the
mass at `xM. Then, when a minimum of ξptq is sensed, the
symmetrical sequence of actions happens, where we substitute
xcom Ñ ´xcom. Formally, the control reads:
if t P stn ; tn`1 ` tf
ξnr
if t P st2n ` tf
; t2n`1r
if t P st2n`1 ` tf
$''&''%unptq,
$''&''%md0:xptq " ξn ` uptq ´ kd0xptq
where unptq is a solution to the position switching problem:
nqq " pxM, 0q
pxp0q, 9xp0qq " p´xptf
xptq ď xM
umax,
´umax,
nq, 9xptf
; t2pn`1qr
ξ2n`1
uptq "
(13)
ξ2n
,
a)b) The converted energy between the mechanical and the elec-
´ for the case ξnxptnq ă 0 and
trical domain (denoted Wc,n
Wc,n
` for the case ξnxptnq ą 0) reads:
" ¯2d0xMξn.
Wc,n
6
(20)
A negative amount of converted energy means that the energy
is converted from the electrical to the mechanical domain.
Summing (20) over n, one obtains the expression (5).
For a practical implementation, an important parameter is
the maximum voltage across the transducer. It is reached when
the energy on the transducer C is equal to the sum of invested
and converted energy ((18) and (20)) for ξmax at position
¯xM. It reads
c
Vmax" 2 p1 ` xMq
1
κ
xM
xM ` xcom
ξmax
(21)
,
3) Comments:
In Sec. II-B, it was highlighted that the
optimal control in terms of harvested energy has to be im-
plemented by simultaneously determining the mathematical
control law and the interface that has to physically implement
it. The problem pQq can itself be enriched with such model
details and cost functionals, e.g., adding end-stops model or
mechanical friction phenomenon and/or minimizing the energy
dissipated in a determined interface circuit. This allows one to
take into account the coupling between the choice of both the
mathematical control law and the interface used to implement
it, that pPq already highlighted.
The choice of the simple open-loop, piecewise-constant
control (13) results from considering this entanglement on
a less formal level. A piecewise-constant control is easily
implemented thanks to property of the transducer to generate a
constant force at a constant charge (see Sec. III-A). To generate
such a control, it is enough to setup the transducer's charge at
discrete time instants, and to keep the charge constant during
the remaining time. This is easily achieved with switching
interfaces described in the literature, and architecture we
propose in this paper is based on these types of interfaces.
In addition, the chosen piecewise-constant force minimizes
the number of force updates (one update per position switch-
ing, which is the minimum number of commutations between
constant values of the force that are necessary to solve pQq).
This is because each update will require the interface to
perform an action with an associated energy cost. Moreover,
one of the constant force values is 0 in order to avoid additional
energy investment, at the cost of a slower position switching.
Increasing the invested energy to implement
the position
switchings results in greater losses in the interfacing circuit
for the same value of converted energy per extremum (20),
hence decreasing the harvested energy. To further decrease
the invested energy and hence the cost of control generation,
xcom can be increased as (18) and (19) show. Yet, increasing
xcom makes the position switching slower as (15) shows, thus
decreasing the control accuracy. The effect of xcom illustrated
in the simulations of Sec. IV-C2.
C. Interface circuit for the energy transfers
where α :" 2xM{pxM ` xcomq.
ξ is the duration of the position switching from xM
c
Here, tf
to ¯xM for an extremum of value ξ. It reads:
¸¸
ξ "
tf
`atan
$&%π if ´
a
δ ` acos
m
k
pxM`xcomq
ξpxM´xcomq´kd0xcompxM`xcomq
b
1` 4kd0xMξ
ξ ` kd0xcom
ξ ` kd0xM
kd0pxM´xcomqp2ξ`kd0pxM`xcomqq
b
1` 4kd0xMξ
kd0xM`ξă
pkd0xM`ξq2
pkd0xM`ξq2ă1` 2kd0xcom
δ :"
where
(15)
`
0 otherwise
(16)
and where umax ą ξmax ` kd0xM (ξmax :" maxt ξptq). The
value of tf
is needed to assess if the position switching is
fast enough such that it can be considered that ξptq « ξn.
ξn
Otherwise, the control will lack accuracy and the implemented
trajectory will deviate from xξptq, resulting in a shortfall in
the converted energy. Estimating tf
requires some information
ξn
about the input to which the system is going to be submitted.
After noticing that tf
ξ is a decreasing function of ξ, we may
conservatively require that
ξ ă K{fmax,
tf
lim
ξÑ0
(17)
for large enough K depending on the tolerated error, and
where fmax denotes the highest frequency component of ξptq
that has significant amplitude. Studies of specific application
contexts of KEH can provide such information. Also, note that
ξ decreases when k is increased.
tf
2) Energy considerations: The conversion between me-
chanical and electrical energy occurs during the position
switchings at the extrema of ξptq. In the case of a maximum
of positive value or of a minimum of negative value (in these
two cases, xptnqξn ă 0), the position switching results in the
conversion of energy from the mechanical to the electrical
domain. At each such extremum, from (18), it comes that the
energy to invest to implement uptq reads:
1 ´ xcom
xM ` xcom
´ " 2d0xM
ξn.
Wi,n
(18)
In the case of a maximum of negative value or of a minimum
of positive value (i.e., xptnqξn ą 0), the position switching
results in the conversion of energy from the electrical
to
the mechanical domain, and the next extremum ξn`1 will
necessarily verify ξn`1xptn`1q ă 0. From (19), the invested
energy reads:
and reads:
unptq "
#
#
$''''&''''%
xptq ă ´xcom
0
´αξn xptq ě ´xcom
´αξn xptq ă xcom
xptq ě xcom
0
if ξn ą 0,
if ξn ă 0
(14)
` " 2d0xM
Wi,n
1 ` xM
xM ` xcom
ξn.
(19)
We now propose an interface circuit to carry out the energy
transfers that are needed to implement the control described in
Sec. III-B, while allowing a recovery of the converted energy
in an electrical energy tank. This circuit has a bidirectional
DC-DC converter topology. Its schematic is depicted in Fig.
5. Let us describe its operation.
In the rest of this subsection, we suppose that the trans-
ducers have fixed capacitance value during the energy transfer
processes described hereafter. This implies that the processes
of updating the value of the force across the transducers are
fast compared to the timescale of the position switching (15),
so that the mass position can be considered equal to a constant
x0. This hypothesis will be assessed at the end of the section.
Interface circuit carrying out the energy exchanges to implement the
Fig. 5.
control strategy described in Sec. III-B.
Fig. 6. Waveforms for the interface circuit switches controls and associated
electrical variables for: (a) application of a force u0 across the transducer (b)
nullifying the force across the transducer.
Setting a force of value u0 requires to transfer an energy
Wu0 (see (12)) to the corresponding transducer (C` if u0 ą 0,
C´ if u0 ă 0). The transducer has then to be disconnected
from the interface circuit, so as to operate at constant charge.
The first step is to close switches S
1 and S
3 to transfer energy
from Cres to L. The switches have to be kept closed for a time
chpu0, x0q to charge the inductor with the energy in (12). If
t
a
we suppose that Cres is large so that the voltage across it Vres
chpu0, x0q reads:
can be considered constant, t
"
2Wu0 L
Vres
2Lu0d0p1 ¯ x0q
chpu0, x0q "
t
a
(22)
Vres
The discharge of the transducer sets the control force to
zero, while transferring the transducer energy to Cres. It can
be in the event of an extremum of the input ξptq, in which
case the invested energy ((18) or (19)) added to the converted
energy (20) have to be transferred from C to Cres. It can
also be the keeping force that is being removed prior to the
position switching, in which case the energy that was invested
7
to set the keeping force has to be recovered. To this end, the
4 have to be closed for a time tdispx0q
switches S
slightly above a quarter period of the LCpx0q cell:
2 and S
c
dispx0q " π
t
2
κd0L
1 ¯ x0
(23)
2
,
ξmax
After that, the switches are opened: L discharges through the
diodes anti-parallel with S
3 , and then the transducer
is kept at constant charge (if the leakage are negligible for the
amount of time specified), generating a constant force u0.
1 and S
The waveforms depicted in Fig. 6.a summarize the evolution
of the involved switches commands and of the electrical
variables during the process of updating the force from 0 to u0.
The waveforms depicted in Fig. 6.b summarize the evolution of
the involved switches commands and of the electrical variables
during the process of updating the force from u0 to 0.
The validity of
the hypothesis that
onpαξ,xcomq ` π{2
a
LCpxcomq. As tf
a
LCpxcomq ă K1tf
the position does
not change during the force update process is now as-
sessed. The longest force update during the mass motion
is when, at xcom, the transducer force is updated from 0
to u0. In this case, the total duration of the force update
is t
ξ decreases
chpαξ,xcomq increases with ξ, the hypothesis
with ξ and t
that should be assessed is
chpαξmax,xcomq ` π
t
(24)
for large enough K1 whose value is dictated by the tolerated
inaccuracy on the constant values of the control force.
D. Computing, position and acceleration measurement units
This section describes the sensing and computation parts
of the architecture. The constitute blocks of this subsystem
and their connections are depicted in Fig. 7. To save space,
and given that these blocks are present in a wide range of
applications, their detailed implementation is not discussed.
For simplicity, one can assume that all of the inputs and
outputs in Fig. 7 and that are mentioned below are digital.
Note that the control uptq as described in Sec. III-B does
not require a measurement of the velocity. However,
the
"computation and state-machine" of Fig. 7 needs a zero
velocity detector (the 9x " 0 input. This is done in order
to increase the robustness of the control. Indeed, because
of control inaccuracy, the mass velocity may vanish before
it reaches the targeted end-stop in the position commutation
and return to the end-stop that it has left when the extremum
was detected. This would result in losing track of the mass
position. To overcome this, when the velocity vanishes during
the position commutation, the keeping force is applied so as
to move the mass to the targeted end-stop (inducing end-stop
collision losses and/or deviation from the optimal trajectory).
The value of the input acceleration and the flags correspond-
ing to the position and velocity of interest, and to the maxi-
mum/minimum detection, are fed into the main computation
unit. This unit computes interface circuit's switches activation
signals needed to implement the control force. To this end,
it incorporates a finite-state automaton that sets the value of
the output according to the sensed events. The graph of this
finite-state automaton is depicted in Fig. 8 for the case of a
a)b)000000 8
Fig. 9.
(a) Pulse generator block. (b) Waveform describing its operation.
This circuit depends on the chosen technology for the switches
(e.g., gate level shifter for power MOSFET switches).
IV. SIZING AND SIMULATIONS OF THE NEAR-LIMITS
ELECTROSTATIC KEH ARCHITECTURE
In this section, the architecture described in Sec. III is tested
in simulation. The simulations are carried out using Cadence
AMS, which allows coupled simulation of the mechanical
part described in terms of ODEs, the electrical part using
a SPICE engine solver, and the computation/sensing part
using behavioral VHDL-AMS models [28]. The modeling and
parameters choice are the subject of Sec. IV-A. The results
of the simulations for the sized architecture are given in
Sec. IV-B. Then, the impact of some of the architecture's
parameters on the harvested energy is highlighted in Sec. IV-C.
The mechanical input excitation used for the simulations is
a 1 s sample extracted from a longer recording of the acceler-
ation on a running human using a smartphone accelerometer.
The sample is representative of the recorded signal in its full
duration, and corresponds roughly to two steps of running. The
acceleration is recorded following the person's height axis. The
smartphone was put in the trousers front pocket.
A. Modeling and sizing of the architecture
In this section,
the architecture is parametrized for the
simulation. Let us put the sole loose constraint that the total
volume of the KEH should be of the order of 1 cm3, and that
the mechanical device is made of silicon. The mechanical res-
onator and the associated differential electrostatic transducer
are modeled in VHDL-AMS, similarly to what is reported
in [28]. The interface circuit is described and simulated as a
SPICE netlist for the coupled simulation.
1) Mechanical part: For the imagined gap-closing electro-
static transducer, a geometry similar to the structure depicted
in Fig. 3 is chosen. It is a cuboid-shaped mass sliding in
between two electrodes, to which it is connected by spring
suspensions. We select a mass of m " 1 g, and a spring
stiffness of k " 400 N m´1, yielding a resonant frequency of
100 Hz for the subsequent resonator. The transducer surface
is of S " 10 cm2, and the gap at x " 0 is of d0 " 50 µm. A
device with such parameters can be obtained, e.g., by a differ-
ential and slightly upscaled version of the transducer structure
reported in [29] fabricated in silicon. With this geometry, the
active area is of 3.16 cm 3.16 cm for a depth of 450 µm. The
mechanical device's volume is then of 0.55 cm3. The stoppers
are placed so that XM " 0.95 (see Fig. 3). The maximum
and minimum values of the transducer's capacitances are re-
spectively CpxMq " 3.54 nF and Cp¯xMq " 90 pF. The
mass, seen as a beam of width 450 µm, length 3.16 cm and
height 3.16 cm, has a stiffness of 17.5 kN m´1 in the direction
Fig. 7. Architecture of the computation and sensors subsystem, that drives the
interface circuit's switches to implement the control strategy of Sec. III-B. The
regular arrows represent "flags", or 1-bit digital signals, whereas the crossed
arrows represent quantities (that can be analog or n-bit digital depending on
their exact implementation).
sensed maximum with ξnxptnq ă 0. The outputs of the finite-
state automaton are a time value and a pulsed command for
each switch of the electrical interfacing circuit. These outputs
are fed into a programmable pulse generator. This component
generates waveforms corresponding to the delays specified on
its input t, when it is activated by a rising edge signal on its
input st. By default, when the component is not generating
any waveform, the output is zero. The detail of the pulse
generation operation is depicted in Fig. 9.
Fig. 8. Schematic of the finite state automaton. The part of the automaton
that is depicted details the sequence for the position switching from ´xM to
`xM when a maximum of positive value is detected. The dotted arrow are
connected to states that are not involved in this position switching event.
A circuit that is not depicted in Fig. 7 is needed in order
to synthesize the suited driving signals for the switches of the
interfacing circuit, from the outputs of the pulse generators.
max. detectmin. detectspeed andposition sensoraccelerometerand max./min.detectioncomputation unitand state-machinepulse gen.pulse gen.pulse gen.pulse gen.pulse gen.pulse gen.pulse gen.pulse gen.xpxmxmxmxpxcxmxcvzmaxminxispc.stspc.tspd.stspd.tsmc.stsmc.tsmd.stsmd.tidleoron on smd.tsmc.stsmc.tonon on on on on xi > 0xi < 0xmxc = 1xpxm = 1vz = 1xiremove forceapply forceremove force and apply forceidlexixismd.stsmd.stspc.stspc.tsmd.tmin = 1max = 1pulse generatorsttouta)toutb)st in
Sec.
then
varied
normal
to the transducer's electrode plane (considering a
Young modulus of 192 GPa for silicon). Given the value of
ξmax, this value allows considering that the mass deflection
in the direction normal to the transducer's electrode plane
is negligible, so that the lumped mass model used to build
the harvester's architecture is accurate. A linear damping
effect is incorporated, to model an air friction phenomenon.
The corresponding damping coefficient is µ " 0.2 mN m´1 s,
corresponding to a quality factor of Q " 10 for the obtained
linear resonator. Note that non-linear air damping effects can
have significant impact on the dynamics of small-sized KEHs.
Yet, vacuum-packaging [30] or clever transducer geometry
design [31] have shown to greatly reduce its effect. The
mechanical end-stops were modeled inspired by [24]: a lin-
ear spring kst " 1 MN m´1 associated with a linear damper
µst " 10 N s m´1.
For the first simulations, xcom is selected as xcom " xM{2
IV-C2). Therefore,
(xcom is
Cpxcomq " 337 pF.
In order estimate the minimum
position switching time as well as to chose the keeping
force umax, an estimate for ξmax is needed. Let us suppose
that ξmax ď 60 mN. Therefore, tf
ξ ranges from 2.84 ms to
4.97 ms. The keeping force must be chosen greater than
ξmax ` kd0xM. We choose umax " 75 mN.
2) Electrical part: The electrical energy tank is modeled
as a large ideal capacitor Cres " 10 µF and with Vres " 10 V.
The switches S
2 block the transducer voltage, that
can go to up to 415 V as indicated by (21), for xcom " xM{2.
These four switches are modeled as power MOSFETs with
their anti-parallel body diodes. They have a major impact on
both the control generation cost and accuracy. We choose to
parametrize them such that their parasitic capacitance at zero
blocking voltage CJ0 " 10 pF. This value is selected as the
largest CJ0 in the range 5 pF to 50 pF (varied by steps of
2.5 pF) that yields less than 5% error on the transducer force
when all resistive losses are compensated, for forces values up
to 100 mN and for a transducer capacitance of Cpxcomq.
From the relations provided in [18] for power MOSFET
blocking up to 420 V, these switches are parametrized such
that their ON-state resistance is of RON ď 19 Ω.
1 and S
To fulfill the size requirement of the KEH, inductors of size
that do not exceed 0.25 cm3 are considered. Given the selected
value for RON, L " 1 mH (modeled as an ideal
inductor
element in series with its parasitic DC resistance of RL " 6 Ω
[32]) is nearly optimal regarding to the resistive energy losses.
The electrical timescale of the force update can be estimated:
tchpαξmax, xcomq ` π{2
LCpxcomq " 6.5 µs.
a
The parts that were described in Sec. III-D are modeled in
VHDL-AMS as behavioral blocks, as are the gate level shifters
driving circuit's MOSFETs.
B. Simulation illustrating the architecture's operation
Results illustrating the operation of the system submitted
to the 1 s input excitation are depicted in Fig. 10. The plot
in Fig. 10.a shows the mass trajectory and the input force. A
magnified plot of both, explicating the mass position switching
around two extrema of ξptq, is depicted in Fig. 10.b.
9
Fig. 10. Results of the simulation of the near-limits electrostatic KEH -- (a)
Mass position and input force. -- (b) Magnification around two extrema: the
minimum at a(cid:13) is detected and hence the control makes the mass move from
`xM to ´xM. The extrema at b(cid:13) and c(cid:13) are ignored as they happen during
the position switching. At d(cid:13), the control inaccuracy provokes a collision
with the end-stop at `xM, since the mass reaches this position with non-zero
velocity. At e(cid:13), the control inaccuracy makes the mass velocity vanish before
´xM, so the control unit applies ´umax and the mass collides with the
end-stop at ´xM. -- (c) Energies in the KEH. The harvested energy refers
to the difference of the energy in Cres between times t " 0 and t. -- (d)
Magnification of the harvested energy around an extremum that is such that
ξ0xpt0q ă 0. At 1(cid:13), energy is gathered back from removing ´umax, and
the mass starts travelling towards `xM as ξptq acts upon it. At 2(cid:13), energy
is invested to implement the control force working negatively on the mass.
At 3(cid:13), the sum (invested energy + converted energy - energy to implement
umax at `xM) is gathered back in Cres. (e) Magnification of the harvested
energy around an extremum that is such that ξ1xpt1q ą 0. At 4(cid:13), the energy
to implement the negatively working control force is invested, while some
energy is being recovered from removing umax at `xM. At 5(cid:13), part of the
invested energy is recovered and the mass continues to travel towards xM.
At 6(cid:13), some energy is invested from Cres to implement umax.
The evolution of the harvested energy is depicted in Fig.
10.c. At the end of the sample, it is equal to 7.2 µJ, whereas
the system input energy is of 15.6 µJ. The sample plot shows
the evolution of the total energy lost in the elements of the
interface circuit, which amounts to 7.3 µJ. The losses in the
stoppers, reflecting the control imprecision, amount to 0.8 µJ.
For the energy balance to be complete, one has to consider
the instantaneous energy stored in C, in the inductors, in
the spring and the energy dissipated by the linear damper
accounting for air friction. As these sum up to smaller amounts
Position -2.5u02.5u5u7.5u10u12.5u15u17.5u00.10.20.30.40.50.60.70.80.91Energy (J)Time (s)Input energyHarvestedenergyLosses inthe interfaceLosses inthe end-stops5u6u7u0.20.210.22Energy (J)Time (s)1235u6u7u8u0.630.640.65Energy (J)Time (s)456-20m020m40m60m00.20.40.60.81Input force (N)Time (s) 0abcde1.2 mN2 mN0.10.30.50.70.96 ms7 msa)b)c)d) than the other energies, they are not represented in the energy
balance in Fig. 10.c.
The results show that nearly as much energy is harvested as
is lost in the electrical interface. The losses in the end-stops
are relatively small, as accuracy in the force was privileged
over resistive losses when selecting the electrical components
in Sec. IV-A2. The good accuracy is further reinforced by the
relative values of the electrical and mechanical timescales. Let
us now discuss how some slight modifications in the control
law can help increase the harvested energy.
C. Control-related levers for optimization
1) Extremum selection: The results in Fig. 10.b show that
the consecutive extremum happening between 0.5 s and 0.7 s
lead to an overall decrease in the harvested energy. This
is because the cost of carrying out the position switchings
overcomes the converted energy for these pairs of extrema. In
such a case, it can be beneficial to skip some extrema.
10
select the next maximum at 0.67 s. Nonetheless, increasing the
threshold value so as to select the latter would in fact make the
extremum at 0.35 s to be skipped. The subsequent sequence of
selected extremum would then result in a decreased amount
of harvested energy.
To further maximise the net energy, one can use smarter
algorithm able to predict the next (future) extrema of the
´maext function. The prediction can be made thanks to
existence of internal correlations present in the vibrations. In-
deed, vibrations in real systems usually follow some repeating
patterns (contrarily to white model noise models widely used
in theoretical studies [3], [15], [16]), and an efficient prediction
may be achieved by standard tools of time series analysis.
Fig. 11. Results of the simulation of the near-limits electrostatic KEH, with
a threshold for extremum detection of 15 mN.
To this end, a primitive criterion of extremum selection for
the position switching can be used. It consists in carrying out
the position switching only if the difference with the previous
extremum exceeds a threshold value, that we select equal to
15 mN. This results in skipping the extrema that led to a
decrease of the harvested energy at the end of the sample.
The system is then simulated, and the results are depicted
in Fig. 11. The trajectory deviates from xξptq in that the
extremum happening between 0.4 s and 0.8 s are now skipped,
since they cost is higher then their contribution to the harvested
energy (see Fig. 10.b). Compared to the previous simulation
without a selection threshold, this results in a decreased input
energy (14.1 µJ) but increased harvested energy (9.4 µJ). Both
the losses in the electrical interface (4.2 µJ) and in the end-
stops (0.3 µJ) are decreased. This is an obvious example where
a different trajectory than xξptq yields higher harvested energy
than xξptq.
Note however that
the maximum at 0.62 s is selected,
whereas it would have been more beneficial to skip it and
Fig. 12. Simulation results for the near-limits KEH, varying xcom and k.
Each point corresponds to the energies at the end of the sample.
2) xcom parameter: The role of the control parameter xcom
was discussed in Sec. III-B2. In addition to the decreased
invested energy, increasing xcom allows choosing switches
with reduced resistance and capacitance, thanks to the reduced
maximum transducer voltage (see (21)). Another advantage in
increasing xcom is that, for extrema such that ξnxptnq ă 0, the
non-zero force is applied when the transducer's capacitance is
Cpxcomq which increases with xcom. Thus, the inaccuracy
on the force value is decreased, as the transducer capacitance
is larger compared to the switches capacitances.
The simulation results depicted in Fig. 12 show the energy
balance at the end of the 1 s input, for values of xcom ranging
from ´xM to xM (excluded), and for different k. The selection
threshold of 15 mN is used. For each point, new values of RON
and CJO are used, which yield the highest harvested energy
for the corresponding maximum transducer voltage.
The results are slightly improved compared to Sec. IV-C1
(k " 400 N m´1). The harvested energy is increased from
9.4 µJ with xcom " 0.5xM to 10.6 µJ with xcom " 0.9xM.
This is the highest value of harvested energy obtained from this
sample. It amounts to 68% of the absolute limit in input energy
-2.5u02.5u5u7.5u10u12.5u15u00.10.30.50.70.90.20.30.40.50.60.70.80.91Energy (J)Time (s) -20m020m40m60m00.20.40.60.81Input force (N)Time (s)0a)b)Input energyHarvestedenergyLosses inthe interfaceLosses inthe end-stops0.105u10u15u-0.200.20.40.60.81Energy (J)xcom/xM05u10u15u-0.200.20.40.60.81Energy (J)xcom/xM05u10u15u-0.200.20.40.60.81Energy (J)xcom/xM05u10u15u-0.200.20.40.60.81Energy (J)xcom/xMN.m-1N.m-1N.m-1N.m-1Losses in the end-stopsLosses in the interfaceInput energyHarvestedenergy that can be obtained with the considered mechanical device
and input excitation. This value of xcom yields a maximum
transducer voltage of 370 V, so that RON is reduced from 19 Ω
with xcom" xM{2, to RON " 15 Ω with xcom" xM{2 [18].
When k is large, increasing xcom is beneficial up to values
that are close to xM. This is because large k ensures that the
position switching remains fast enough, despite the increase
of xcom, so that the control effectively implements the ideal
trajectory xξptq. As k is decreased, the position switching
becomes slower. Hence,
the value of xcom for which the
control becomes inaccurate and the trajectory deviates from
xξptq is reduced. The decrease in the input energy for values
of xcom approaching xM is due to a significant deviation
of xptq from xξptq. For example, with k " 50 N m´1 and
xcom " 0.9xM, the switching time for the maximum at 0.17 s
(the largest extremum of the example) is of 6.8 ms, during
which ξptq decreases by 30% from its value at the extremum.
D. Discussion
The sizing of the near-limits KEH done above started
by considering a 1 cm3 size constraint was considered. A
mechanical device inspired by existing designs and compatible
with this constraint was chosen a priori (Sec. IV-A1). Only
then, the electrical part was optimized under a transducer
force accuracy constraint (Sec. IV-A2), hence predefining the
balance between the control accuracy and the energy losses
in the interface circuit. This determined value of the resistive
components of the circuit elements, which are the origin of
a major component of energy loss in the electrical interface.
Finally, after both the mechanical part and the electrical part
were fixed, the control was tuned in order to maximize the
harvested energy (Sec. IV-C).
In fact, allowing for customized sizing of the mechanical
device and for different balances between the control accuracy
and the losses in the electrical interface may improve the
figures of harvested energy, instead of the sequential design
choices described above. The subsequent optimization should
include parameters related to the control, to the mechanical
part, and to the circuit components, under constraints that are
dictated by the application (e.g., maximum size constraint) and
for known characteristics of the input (at least ξmax). This can
be done by enriching the problem pQq with cost functionals
related to the chosen mechanical and electrical parts.
Optimization levers in electrical interface include, e.g., the
value of Vres. It can be shown that increasing Vres decreases
the dissipated energy in the interface circuit's elements, but
can may necessitate a step-down conversion mechanism if
the voltage required by the supplied electronics is small.
Also, note that other technologies than power MOSFET may
offer reduced dissipation [33]. Detailed electrical interface
optimization for kinetic energy harvesters can be found in, e.g.,
[18], [34], which deal with electrical interfaces similar to that
of our architecture, albeit without the additional optimization
levers and requirements posed by the trajectory control of the
near-limits KEH architecture.
Finally, note that a limitation of the above simulations is
that they do not take into account the consumption of the
blocks of Sec. III-D, as they were described using behavioral
11
models. Some of these parts have to be taken into account in
the overall system optimization, as their energy consumption
depends on the system's parameters. For example, the temporal
resolution of the position detector should be low enough
compared to the position switching time, which goes with
increased power consumption. This may mitigate the results
of Fig. 12 which show the benefits of increasing k, because
larger k decreases the position switching time (see (15))
and hence puts more stringent requirements on the position
detector's temporal resolution. Likewise, the pulse generator
and computation speeds have be negligible with respect to
the position switching time. State-of-the-art realizations of
each of the blocks constituting the computing and sensing
part show micro-watt or sub-micro-watt energy consumption
figures [35] -- [39]. This is comparable to the harvested energy,
further reinforcing the need for a fine system optimization.
V. CONCLUSION
The architecture of an electrostatic KEH intended to max-
imize the harvested energy from arbitrary vibration sources
was described in detail. Simulation results support the proof
of concept of such a system and show the effect of some of
the architecture's parameters that can be used to optimize the
KEH's operation. A figure of harvested energy that amounts
to up to 10.6 µJ is attained, from a 1 s vibration sample
recorded on a running human. This amounts to 68% of the
absolute limit set by the device size and the input. Although
the consumption of the parts responsible for the computation
and sensing was not taken into account, the architecture still
has room for improvement by the mean of a full-system
optimization. Future works may focus on such an optimization,
as well as on a practical implementation of a near-limits KEH
based on the presented architecture.
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|
1808.06605 | 1 | 1808 | 2018-08-20T02:37:13 | Tomographic Reconstruction of Two-Dimensional Residual Strain Fields from Bragg-Edge Neutron Imaging | [
"physics.app-ph"
] | Bragg-edge strain imaging from energy-resolved neutron transmission measurements poses an interesting tomography problem. The solution to this problem will allow the reconstruction of detailed triaxial stress and strain distributions within polycrystalline solids from sets of Bragg-edge strain images. Work over the last decade has provided some solutions for a limited number of special cases. In this paper, we provide a general approach to reconstruction of an arbitrary system based on a least squares process constrained by equilibrium. This approach is developed in two- dimensions before being demonstrated experimentally on two samples using the RADEN instrument at the J-PARC spallation neutron source in Japan. Validation of the resulting reconstructions is provided through a comparison to conventional constant wavelength strain measurements carried out on the KOWARI engineering diffractometer within ANSTO in Australia. The paper concludes with a discussion on the range of problems to be addressed in a three-dimensional implementation. | physics.app-ph | physics |
Tomographic Reconstruction of Two-Dimensional Residual Strain Fields from
Bragg-Edge Neutron Imaging
A.W.T. Gregg,1, ∗ J.N. Hendriks,1 C.M. Wensrich,1 A. Wills,1 A.S. Tremsin,2
V. Luzin,3 T. Shinohara,4 O. Kirstein,1, 5 M.H. Meylan,6 and E.H. Kisi1
1School of Engineering, The University of Newcastle, Callaghan NSW 2308, Australia
2Space Sciences Laboratory, University of California, Berkeley CA 94720, USA
3ACNS, Australian Nuclear Science and Technology Organisation (ANSTO), Kirrawee NSW 2232, Australia
4Materials and Life Sciences Facility, Japan Proton Accelerator Research Complex, Tokai-mura, Ibaraki 319-1195, Japan
6School of Mathematical and Physical Sciences, The University of Newcastle, Callaghan NSW 2308, Australia
5European Spallation Source, Lund 223 63, Sweden
(Dated: June 7, 2021)
Bragg-edge strain imaging from energy-resolved neutron transmission measurements poses an
interesting tomography problem. The solution to this problem will allow the reconstruction of
detailed triaxial stress and strain distributions within polycrystalline solids from sets of Bragg-edge
strain images. Work over the last decade has provided some solutions for a limited number of
special cases. In this paper, we provide a general approach to reconstruction of an arbitrary system
based on a least squares process constrained by equilibrium. This approach is developed in two-
dimensions before being demonstrated experimentally on two samples using the RADEN instrument
at the J-PARC spallation neutron source in Japan. Validation of the resulting reconstructions is
provided through a comparison to conventional constant wavelength strain measurements carried
out on the KOWARI engineering diffractometer within ANSTO in Australia. The paper concludes
with a discussion on the range of problems to be addressed in a three-dimensional implementation.
I.
INTRODUCTION
Energy-resolved neutron transmission techniques now
provide a means for obtaining high-resolution images of
strain within polycrystalline solids [1 -- 4]. These tech-
niques rely upon the relative shifts of abrupt changes
in transmission rate as a function of wavelength -- known
as Bragg-edges -- the position of which are governed by
diffraction.
Detailed descriptions of this approach can be found
elsewhere (e.g.
[1, 5]). Briefly, the process involves
the measurement of transmission spectra, typically using
time-of-flight techniques at pulsed neutron sources (e.g.
J-PARC in Japan, ISIS in the UK, or SNS in the USA).
Current detector technology is now able to perform such
measurements simultaneously over arrays of individual
pixels as small as 55 µm. From this data, shifts in the
position of observed Bragg-edges relative to a reference
stress-free sample provide a measure of strain.
The salient points of such a measurement can be sum-
marised as follows;
1. As with all diffraction-based techniques, strain
measured in this way represents the elastic com-
ponent alone.
2. The measured strain is the normal component in
the transmission direction of the neutron beam.
3. Strain measured by each detector pixel represents
a through-thickness average along the path of the
corresponding ray.
The success of this approach and development of
instruments and associated detector technologies has
prompted activity focused on solving the associated to-
mographic reconstruction problem [6 -- 13]. The aim is to
provide a method analogous to conventional Computed
Tomography by which the full triaxial strain distribution
within a sample could be reconstructed from a sufficient
set of Bragg-edge strain images. Note that this involves
the reconstruction of a tensor field -- an inherently more
complex task.
Once developed, this approach has the potential to
make a significant impact in a number of areas within
experimental mechanics. A prominent example concerns
the assessment of residual stress fields in systems such
as additively manufactured, laser clad, peened, welded,
cast, forged and/or otherwise deformed components. In
each case, residual stress locked in by the manufacturing
process has a critical impact on the strength and perfor-
mance of the resulting parts. Bragg-edge strain tomog-
raphy promises a unique full-field approach to examining
these systems over practical length scales.
This task revolves around the inversion of the Longitu-
dinal Ray Transform (LRT) which represents an appro-
priate model of the measurement process [9]. While in
general this is a three-dimensional problem, for simplicity
we will consider only two dimensions in this paper.
With reference to the co-ordinate system and geometry
shown in Figure 1, the LRT can be written;
(cid:90) L
Γ(p, θ) =
1
L
ij(x(s, p), y(s, p))ni nj ds,
0
∗ [email protected]
where the rank-2 tensor strain field is mapped to the
average normal component of strain, Γ, along the ray
with direction n =(cid:2)cos(θ) sin(θ)(cid:3)T
p on the detector.
arriving at position
FIG. 1: A single ray passes through a sample and
provides a measurement of the through-thickness
average normal strain in the direction of the ray at a
detector pixel. For each projection angle, θ,
measurements across the detector form a profile Γ(p, θ).
From Lionheart and Withers [9], the LRT is known
to be a non-injective mapping (from (x, y) to Γ(p, θ)).
Strain fields producing any given set of projections are
not unique. As a consequence, general tomographic
reconstruction is not possible from the measurements
alone; additional information or constraints are required
to isolate the correct (i.e. physical) field from all the pos-
sibilities. To this end, a number of prior approaches have
been developed that rely upon assumptions of compati-
bility or equilibrium to further constrain the problem.
Compatible strain fields are those that can be writ-
ten as the gradient of a displacement field in a simply
connected body (i.e. conservative). In general, this is al-
ways the case. However, when the total strain has both
elastic and inelastic parts, only the compatibility of the
sum is guaranteed. If compatibility of the elastic com-
ponent can be assumed (e.g. in the absence of plasticity
or other forms of eigenstrain), a strong constraint on the
reconstruction problem exists. This constraint was cen-
tral to the success of a number of prior reconstruction
algorithms.
For example, the seminal work by Abbey et al. [6, 7]
on axisymmetric systems examined the reconstruction of
strain within quenched cylinders and a standard VAMAS
ring-and-plug sample using various basis functions along-
side assumptions of compatibility. Outside of axisymmet-
ric systems, reconstructions have been demonstrated for
a number of special cases; e.g. granular systems [10], and
strain fields resulting from in situ loads [11, 12] where
elastic strain compatibility can be assumed.
Unfortunately, in the vast majority of residual stress
problems (e.g. all of the examples mentioned earlier),
2
the elastic component of strain is inherently incompat-
ible. While compatibility cannot generally be assumed,
equilibrium must always be satisfied. Two separate al-
gorithms for axisymmetric systems have been presented
that rely on this assumption [8, 13].
In the case of Kirkwood et al.
[8], the assumption
of equilibrium was not apparent at the time; it was a
consequence of their approach to boundary conditions.
In contrast, equilibrium was explicit and central to the
method presented in [13]. Equilibrium is also central to
the method presented in [14] where the unknown strain is
reconstructed using a machine learning technique known
as a Gaussian process [15]. This probabilistic method
approaches the problem by considering strain as a dis-
tribution of Airy stress functions, which automatically
satisfy equilibrium.
In this paper we develop an approach for reconstruc-
tion of arbitrary two-dimensional systems using an equi-
librium constraint to provide unique solutions. The re-
sulting algorithm is demonstrated in both simulation and
on experimental data. We also provide a brief discussion
on the potential extension to three-dimensions.
II. APPROACH
The typical geometry for Bragg-edge strain imaging is
shown in Figure 1. In each orientation, θi, a profile of
the form Γ(p, θi) is measured across the width of the
detector -- each detector pixel contributes one point to
this profile. Inherent symmetry of the transform implies
projections over 180 degrees are sufficient, however in
practice measurements are usually taken over an entire
revolution. A complete set of profiles can be arranged
to form a transformed image that resembles a traditional
sinogram (e.g. Figure 3). Given this strain-sinogram, we
seek to recover from the infinite number of fields which
potentially map to it.
Our approach is as follows:
1. Define a basis for the set of possible strain fields,
E. Elements of E may not necessarily be physical
(that is, they may not satisfy equilibrium).
2. Compute the corresponding set of strain-sinograms,
S, by mapping each element of E through the LRT.
This forward projection involves numerical integra-
tion along ray paths.
3. Through constrained least-squares fitting, find a
linear combination from E such that;
-- The corresponding combination from S pro-
vides the measured strain-sinogram, and,
-- Equilibrium is satisfied at a sufficient number
of test points.
In a numerical implementation, E is composed of a
finite number of elements. Ideally this set should be or-
(cid:88)
a,b∈Z
ij(x, y) =
αa,b
ij sin
thogonal and ordered with increasing complexity to fa-
cilitate truncation. To this end, our approach employs a
two-dimensional Fourier basis to write each component
of strain in the form;
(cid:18) aπ
x
L
y
W
sin
(cid:19)
(cid:19)
(cid:18) bπ
(cid:18) aπ
(cid:19)
(cid:18) bπ
(cid:19)
(cid:18) aπ
(cid:18) bπ
(cid:19)
(cid:18) aπ
(cid:19)
cos
sin
W
W
L
L
x
x
y
+ ηa,b
ij cos
x
cos
L
+βa,b
ij sin
+γa,b
ij cos
(cid:19)
(cid:18) bπ
y
W
(cid:19)
y
ij . . . ηa,b
where a and b are wave numbers, L and W are charac-
teristic dimensions of the geometry, and αa,b
ij are
unknown coefficients to be determined by the algorithm.
Truncating this basis to n and m wave numbers in the
x and y directions respectively (i.e. a ∈ [0, n], b ∈ [0, m])
gives 12nm + 3 tensor functions -- 4 sinusoids for each
component of strain, 3 components for each permuta-
tion of wave numbers and 3 constant fields. While the
forward-mapping of these functions is potentially a large
task, it can be done offline and ahead of time. In other
words, a library of basis pairs can be calculated prior
to any experiment provided that the sample geometry is
known.
Through Hooke's law, the equations of equilibrium can
be written directly in terms of strain. In two-dimensions,
this relies upon either a plane-stress or plane-strain as-
sumption. For example, assuming plane-stress provides;
∂
∂x
∂
∂y
(xx + νyy) +
(yy + νxx) +
(1 − ν)xy = 0
(1 − ν)xy = 0
∂
∂y
∂
∂x
where ν is Poisson's ratio.
Our algorithm imposes these two equations at a set of
test points distributed over the interior of the sample.
At each point this provides a linear constraint on the
unknown coefficients.
The resulting constrained least-squares problem can
be solved using a variety of techniques. Our algorithm
utilises the lsqlin MATLAB intrinsic function.
Choice of n and m requires no a-priori knowledge of
the system; the size of the basis can be chosen as the
minimum required to capture the relevant features in
the observed strain-sinogram. This can be assessed by
examining the residual between the strain-sinogram and
the fitted version; ideally no structure should be visible
above random noise. In a sense, in terms of the resulting
reconstruction, n and m have some similarity to resolu-
tion, however they are certainly not the same.
III. DEMONSTRATION -- SIMULATION
3
We first demonstrate this algorithm on the classical
cantilevered beam as examined previously by Wensrich
et al.
[11] and shown in Figure 2. Under a plane-stress
assumption, the Saint-Venant approximation to the re-
sulting strain field is [16]:
P
(cid:16)(cid:0) w
EI ((cid:96) − x)y
(cid:1)2 − y2(cid:17)
2
− (1+ν)P
2EI
(cid:1)2 − y2(cid:17)
(cid:16)(cid:0) w
− (1+ν)P
− νP
EI ((cid:96) − x)y
2EI
2
,
(x, y) =
where I is the second moment of area, P is the applied
load, E is Young's modulus and ν is Poisson's ratio. (cid:96)
and w are the dimensions shown in Figure 2.
Note that this strain field is compatible; a fact that
In contrast, no
was central to the previous approach.
such assumption is made by the current algorithm.
FIG. 2: Cantilevered beam coordinate system and
geometry. (cid:96) = 20 mm, w = 10 mm, P = 2 kN, E = 200
GPa and ν = 0.3 [11].
50 Bragg-edge strain profiles over equally spaced an-
gles between 0 and 180◦ were numerically simulated
from this field assuming a state-of-the-art Micro-Channel
Plate (MCP) detector with 512 pixels over 28 mm [2].
Gaussian measurement noise with standard deviation
σ = 1.25 × 10−4 was introduced; a value within the ca-
pabilities of current neutron instruments [12].
The simulated strain-sinogram, resulting fit from S
and its residual based on n = m = 8 wave numbers and
a mesh of 1000 equally spaced equilibrium test points
is shown in Figure 3. Characteristic lengths were cho-
sen from the sample dimensions (L = (cid:96), W = w). It is
clear that the residual has no structure, implying that a
sufficient number of basis vectors have been used.
The resulting reconstruction in Figure 4 shows close
agreement with the physical solution. Overall, the abso-
lute error in strain is below 2.7×10−5; almost one order of
magnitude below the noise introduced into the measure-
ments. This would indicate that the mesh of equilibrium
test points were sufficiently dense to isolate the physical
solution. Note that increasing the number of equilibrium
points does not add significant computational burden, in
fact in most cases the additional constraints aid the con-
vergence.
Direct comparison with the algorithm described by
[11] shows significantly faster conver-
Wensrich et al.
gence for this system (see Figure 5). As expected, as
the order of the basis increases the convergence is slower,
however, even at n = m = 10 the convergence is at least
twice as fast. Note that, with n = m = 10, our problem
involves 1203 unknown coefficients; far in excess of the
242 unknown boundary displacements in Wensrich et al..
4
FIG. 3: (left) A simulated strain-sinogram from the cantilevered beam shown in Figure 2, (centre) the fitted
strain-sinogram using 8 wave numbers in the x and y directions, and (right) spatial residual in the fit.
FIG. 4: (left) The Saint-Venant solution from which measurements were simulated, (centre) the reconstructed strain
field, and (right) the error, scaled by a factor of 10.
IV. DEMONSTRATION -- EXPERIMENTAL
Following success in simulation, the algorithm was
demonstrated on real-world examples in an experiment
on the RADEN energy resolved neutron imaging instru-
ment at the Japan Proton Accelerator Research Com-
plex (J-PARC) [17, 18]. This experiment focused on re-
5
hardened steel platens in a mechanical testing machine.
The second sample contained a total interference of
40 ± 2 µm produced through cylindrical grinding. Fi-
nite element simulation suggested that this would provide
strains of significant magnitude below yield. After man-
ufacture, the sample was assembled through a shrink-fit
process (380◦ C versus -196◦ C).
Strain profiles were measured from both samples simul-
taneously using the RADEN instrument together with an
MCP detector (512×512 pixels, 55 µm per pixel) at a dis-
tance of 17.9 m from the source. The source power was
409 kW (January 2018). Counts were binned into half-
columns corresponding to the full height of each sample
(one pixel wide) to provide the measured profiles Γ(p, θ)
as shown in Figure 7. The resolution of the profiles was
estimated from the sharpness of the sample boundaries
and found to be approximately 100 µm. Note that this
does not correspond to the resolution of the final recon-
structions which, as mentioned earlier, is a more compli-
cated matter.
FIG. 5: Convergence of the algorithm for the
cantilevered beam as compared to the boundary
reconstruction method presented in Wensrich et al. [11].
constructing residual strain fields within two EN26 steel
samples (medium carbon, low-alloy) as follows;
1. A crushed ring formed through plastically deform-
ing a hollow cylinder, and,
2. An offset ring-and-plug system with residual strain
resulting from an interference (i.e. shrink) fit.
FIG. 7: Neutron counts were binned over half-columns
of pixels to provide a profile Γ(p, θ) from each sample.
Each individual strain measurement was of the form;
d − d0
d0
,
¯ =
FIG. 6: Sample geometries: (left) the crushed ring, and
(right) the offset ring-and-plug. All dimensions in mm.
These samples were specifically designed to test the
algorithm in the case of both continous (crushed ring)
and discontinuous (ring-and-plug) strain fields.
Each sample was manufactured from the same bar of
EN26 and was heat treated with an identical process to
relieve stress and provide a uniform tempered-martensite
structure (i.e. ferritic) prior to crushing/assembly. The
final hardness of each sample was 290 HV. Sample ge-
ometries are shown in Figure 6; both samples were 14
mm tall.
The first sample was plastically deformed by 1.5 mm
on the diameter using approximately 8.4 kN of load from
where the atomic lattice spacing d was found through
fitting the integral form of the Kropff model to the (110)
Bragg-edge, with d0 the undeformed reference spacing
(assumed constant). A typical edge fit is shown in Figure
8. A more detailed description of the fitting process is
outlined in [1] and [2].
Throughout the experiment it was apparent that the
fitted edge position was sensitive to sample thickness.
This effect has previously been described by Vogel [19],
however the exact mechanism is yet to be established.
Potentially, the effect is a consequence of a weighting to-
wards shorter wavelengths in the transmitted spectrum
with sample thickness due to energy dependent atten-
uation -- generally known as beam hardening [20].
In
our case, this may lead to a systematic bias in the ob-
served location of edges depending on the path length.
10231.52514.09±0.00114.05±0.001 6
There is also the potential to approach this problem
through full pattern fitting techniques as described by
[21 -- 25]. Developments in this area of research have the
potential to resolve many potential issues in the strain
measurement process such as texture and grain size ef-
fects as well as this current issue. At present this is not
practical in terms of the number of individual measure-
ments and the time required to fit a single pattern, how-
ever this will certainly improve in the future.
In total, 50 profiles were measured at golden angle
increments [26] in θ with a sampling time of 2 hours
per projection. This provided a statistical uncertainty
in strain of the order 1× 10−4 over most of the measure-
ments. Together with open-beam and d0 measurement,
4.5 days of beamtime were utilised.
Alignment of each sample was determined through
matching the projected sample outlines to the conven-
tional sinograms. This involved calculating positions rel-
ative to the centre of rotation, and, in the case of the
crushed ring, the initial angular offset.
Validation relied upon comparison to detailed con-
ventional strain scans [27 -- 29] from the KOWARI con-
stant wavelength strain-diffractometer at the Australian
Nuclear Science and Technology Organisation (ANSTO)
[30 -- 32]. These scans provided measurements of the three
in-plane components of strain over a mesh of points
within each sample (174 points in the crushed ring and
195 points in the offset ring-and-plug). These were based
upon the relative shift of the (211) diffraction peak mea-
sured using neutrons of wavelength λ = 1.67 A (90◦ ge-
ometry) and a 0.5 × 0.5 × 14 mm gauge volume. Note
that the {211} and {110} lattice planes effectively have
the same diffraction elastic constants [33].
Sampling times on KOWARI were based on provid-
ing uncertainty in strain around 7× 10−5 which required
around 30 hours of beamtime per component in the offset
ring-and-plug and 15 hours per component in the crushed
ring. Together with sample setup and alignment, a total
of 6 days of beamtime were required for the two samples.
V. RESULTS
A. Crushed Ring
The measured strain-sinogram from the crushed ring is
shown in the left-hand-side of Figure 10. Reconstruction
from this data was carried out using 10 wave numbers
in both the x and y directions and 1000 regularly spaced
equilibrium test points over a grid on the interior of the
sample. Characteristic lengths were chosen in-line with
the major and minor axes of the crushed ring. The re-
constructed strain field is shown on the left of Figure
11 compared to an interpolation of the KOWARI strain
scans. Figure 12 provides a direct comparison along a
number of key cross sections.
In general, the reconstruction shows close agreement to
the KOWARI measurement in terms of overall structure
FIG. 8: A typical measurement of the (110) Bragge-edge
together with a fitted profile based on the Kropff model.
Along with a decrease in the height, beam hardening can
slightly modify the shape of an edge and sensitivity be-
tween parameters in the curve fitting process can result
in a perceived pseudostrain.
To account for this effect, a correction was applied to
d0 as determined via a stress-relieved wedge-shaped sam-
ple. Bragg-edge positions were measured from this sam-
ple over 9 hours allowing a linear trend against thickness
to be determined as shown in Figure 9.
FIG. 9: Bias in the fitted d0 value as a function of the
irradiated path length.
This empirical model proved sufficient for our pur-
poses, however a more theoretical approach based
on known neutron cross-sections is being investigated.
7
FIG. 10: The measured strain-sinograms for the crushed ring (left) and ring-and-plug system (right).
FIG. 11: Strain maps interpolated from point-wise measurements on KOWARI compared to reconstructions from
transmission measurements on RADEN for (left) the crushed ring, and (right) the ring-and-plug system.
sections.
8
FIG. 12: Distribution of xx and yy strain components
over a number of cross sections within the crushed ring.
of the strain distribution. In particular, the symmetries
present within the sample can be observed within the
reconstruction despite the fact that no such assumption
was made. At a detailed level, there are some areas of dis-
crepancy. For example, the xx component shows more
pronounced banding across the width of the sample com-
pared to KOWARI, and does not capture the full extent
of the square-shaped tensile region in the yy component.
This behaviour was not observed in reconstructions
based on simulated measurements from the interpolated
KOWARI strain maps -- even with significant levels of
simulated Gaussian noise. This suggests that the issue is
not with the particular field or sample geometry, but sys-
tematic errors within the Bragg-edge fitting process. The
validity of the plane-stress assumption (or lack thereof)
may also play a role.
B. Offset Ring-and-Plug
The discontinuities in the ring-and-plug system neces-
sitated the use of higher-order basis functions. The re-
construction for this systems was based on 30 wave num-
bers in both the x and y directions (i.e. n = m = 30)
and characteristic lengths equal to the sample diame-
ter. Equilibrium was enforced at 1000 equally spaced
points. The right-hand-sides of Figures 10 and 11 show
the measured strain-sinogram and reconstruction respec-
tively. Figure 13 shows a comparison over 3 key cross-
FIG. 13: Distribution of xx and yy strain components
over a number of cross sections within the ring and plug.
As with the crushed ring, the reconstruction and
KOWARI measurements show good overall agreement.
The discontinuity in strain between the ring and plug
obviously presents an interesting challenge with ringing
artefacts clearly present in the reconstruction. This effect
is particularly evident in Figure 13, where overshoots and
oscillations can be seen in the region of the step. This
effect was lessened by including higher order terms, how-
ever arbitrarily increasing n and m is not practical; the
number of unknown coefficients grows with 12nm and can
rapidly approach the number of measurements. Prior to
this limit, the computational burden may become im-
practical.
One potential solution is to use a 'tailored' basis in
which strains within the ring and plug are constructed
from separate basis functions (e.g. [13]). While this can
eliminate the ringing, it is not a general approach since
it requires prior knowledge about the composition of the
system.
In effect, the KOWARI measurements we are
comparing to have been treated in this way; two sepa-
rate interpolants have been used to generate the strain
map shown in Figure 11. This is appropriate in this
case, given that it serves as a reference with which to
compare our reconstruction. It should also be noted that
this problem is a direct result of the discontinuity -- in
the vast majority of practical cases strain fields tend to
be smooth and this issue will not occur.
C. Error Assessment
From these results, a quantitative assessment of the
discrepancy between the diffraction measurements and
tomographic reconstructions was carried out.
In both
cases, the difference was mean zero and Gaussian. This
would imply that the d0 correction effectively removed
the bias associated with sample thickness.
Over the 174 points measured within the crushed ring,
the standard deviation of the difference was 370 µStrain.
Similarly, over the 195 points measured within the offset
ring-and-plug, the standard deviation was 290 µStrain.
These are slightly higher than expectations based on the
simulation results, however it should be pointed out that
we are comparing to measurements which potentially
have their own biases.
VI. EXTENSION TO THREE DIMENSIONS
The algorithm outlined in this paper does not rely on
the sample geometry being two-dimensional - in fact it
can be easily extended to three dimensions with a small
increase in complexity.
In three-dimensions there are six unknown components
of strain to reconstruct. This obviously increases the
computational burden associated with forward-mapping
and fitting basis functions. For example, a real-valued
three-dimensional Fourier series would entail 24n3 ba-
sis functions for n wave numbers in each direction (as
opposed to 12n2). However, there is also an additional
equation of equilibrium that provides a stronger con-
straint on any linear combination. The amount of in-
formation per projection is also significantly increased;
i.e. two-dimensional images versus one-dimensional pro-
files. From this perspective, the number of projections re-
quired is likely to remain roughly equivalent for the same
measurement resolution. Note that, in three-dimensions,
projections would need to be distributed over all direc-
tions in three-dimensional space.
Overall, the size of the problem would be larger, how-
ever the numerical approach would remain the same.
The true difficulty surrounds the implementation. In
three-dimensions, correspondingly larger sampling times
are required to provide equivalent measurement uncer-
tainty in two-dimensional images. At present this would
certainly require compromise in terms of the trade-off be-
tween measurement uncertainty and resolution through
grouping multiple detector pixels.
In the present work, columns of 256 pixels were
grouped to provide one-dimensional profiles; to achieve
the same uncertainty in a two-dimensional image, blocks
of 16 × 16 detector pixels (0.88 × 0.88 mm) would be
required. This situation may improve in the future as
sources improve; e.g. J-PARC is expected to reach 800
kW in the near future with additional increases over
1 MW scheduled. Once commissioned, the European
Spallation Source (ESS) in Sweden promises to be even
9
brighter. At 800 kW, image resolutions as low as 0.5×0.5
mm would be achievable with only a doubling of sam-
pling time. It should also be noted that, in the current
work, we have erred on the side of caution in terms of
the uncertainty-resolution compromise at the expense of
sampling time; comparable results may have been possi-
ble with less beamtime.
Given its importance, the effects of the uncertainty-
resolution compromise forms a central question that must
be investigated prior to three-dimensional implementa-
tion.
Associating each measurement with a defined path
through known three-dimensional sample geometry also
poses significant additional complexity. This is coupled
with the fact that more than one axis of rotation is re-
quired to view the sample from all directions with blind-
spots potentially created by the positioning stage.
If achieved, three-dimensional Bragg-edge tomography
has the potential to provide information that cannot
practically be measured any other way; full-field mapping
in three-dimensions using current neutron strain scanners
is a difficult process restricted by practical limitations in
gauge volume size (≈1 mm3) and count times.
In principle, the issues involved in three-dimensional
strain tomography are not insurmountable and they form
a natural focus for future work.
VII. CONCLUSION
An algorithm for the reconstruction of biaxial elastic
strain tensor fields from Bragg-edge neutron images has
been presented. In contrast to previous algorithms, our
method is capable of reconstructing residual strain since
no assumption of elastic strain compatibility is made.
This approach was demonstrated in simulation and us-
ing experimental data collected from two samples on the
RADEN energy-resolved neutron imaging instrument.
Results showed excellent agreement with strain maps
measured using the KOWARI constant wavelength en-
gineering diffractometer.
While Lionheart and Withers [9] clearly demonstrated
that Bragg-edge strain tomography is an ill-posed in-
verse problem, we have been able to achieve the task by
considering the physical constraint imposed by equilib-
rium. This experiment now represents the first ever to-
mographic reconstruction of residual strain fields outside
of simple axisymmetric systems from Bragg-edge data.
At least in two-dimensions, full field Bragg-edge strain
tomography can now provide a complementary approach
to established pointwise diffraction-based strain measure-
ment techniques.
The experiment has also highlighted a number of fu-
ture areas of investigation. These include the effects of
beam hardening and strain gradients on the perceived
elastic strain inferred from Bragg-edges and the exten-
sion of the tomographic approach to three-dimensional
strain fields.
VIII. ACKNOWLEDGMENTS
This work is
supported by the Australian Re-
search Council through a Discovery Project Grant
(DP170102324). Access to the RADEN and KOWARI
instruments was made possible through the respective
user access programs of J-PARC and ANSTO (J-PARC
Long Term Proposal 2017L0101 and ANSTO Program
Proposal PP6050). The authors would also like to
thank AINSE Limited for providing financial assistance
(PGRA) and support to enable work on this project.
10
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|
1806.02672 | 1 | 1806 | 2018-06-07T13:32:20 | Plasmonics in Argentene | [
"physics.app-ph",
"cond-mat.mtrl-sci",
"physics.optics"
] | Two-dimensional materials exhibit a fascinating range of electronic and photonic properties vital for nanophotonics, quantum optics and emerging quantum information technologies. Merging concepts from the fields of ab initio materials science and nanophotonics, there is now an opportunity to engineer new photonic materials whose optical, transport, and scattering properties are tailored to attain thermodynamic and quantum limits. Here, we present first-principles calculations predicting that Argentene, a single-crystalline hexagonal close-packed monolayer of Ag, can dramatically surpass the optical properties and electrical conductivity of conventional plasmonic materials. In the low-frequency limit, we show that the scattering rate and resistivity reduce by a factor of three compared to the bulk three-dimensional metal. Most importantly, the low scattering rate extends to optical frequencies in sharp contrast to e.g. graphene, whose scattering rate increase drastically in the near-infrared range due to optical-phonon scattering. Combined with an intrinsically high carrier density, this facilitates highly-confined surface plasmons extending to visible frequencies. We evaluate Argentene across three distinct figures of merit, spanning the spectrum of typical plasmonic applications; in each, Argentene outperforms the state-of-the-art. This unique combination of properties will make Argentene a valuable addition to the two-dimensional heterostructure toolkit for quantum electronic and photonic technologies. | physics.app-ph | physics | Plasmonics in Argentene
Ravishankar Sundararaman,1, ∗ Thomas Christensen,2 Yuan Ping,3 Nicholas
Rivera,2, 4 John D. Joannopoulos,2 Marin Soljačić,2 and Prineha Narang4, †
1Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
2Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
3Department of Chemistry, University of California, Davis, CA, USA
4John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA
(Dated: June 8, 2018)
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Two-dimensional materials exhibit a fascinating range of electronic and photonic properties vital for nanopho-
tonics, quantum optics and emerging quantum information technologies. Merging concepts from the fields
of ab initio materials science and nanophotonics, there is now an opportunity to engineer new photonic ma-
terials whose optical, transport, and scattering properties are tailored to attain thermodynamic and quantum
limits. Here, we present first-principles calculations predicting that Argentene, a single-crystalline hexagonal
close-packed monolayer of Ag, can dramatically surpass the optical properties and electrical conductivity of
conventional plasmonic materials. In the low-frequency limit, we show that the scattering rate and resistivity
reduce by a factor of three compared to the bulk three-dimensional metal. Most importantly, the low scattering
rate extends to optical frequencies in sharp contrast to e.g. graphene, whose scattering rate increase drastically
in the near-infrared range due to optical-phonon scattering. Combined with an intrinsically high carrier density,
this facilitates highly-confined surface plasmons extending to visible frequencies. We evaluate Argentene across
three distinct figures of merit, spanning the spectrum of typical plasmonic applications; in each, Argentene
outperforms the state-of-the-art. This unique combination of properties will make Argentene a valuable addition
to the two-dimensional heterostructure toolkit for quantum electronic and photonic technologies.
Two rapidly developing and converging fields from the
past decade make atomic-scale engineering of new materials
now within reach. First, a revolution in materials discovery
has yielded a diverse portfolio of new classical and quantum
photonic materials. These include a variety of nanostructures
and two-dimensional layered architectures that can be crafted
with structural precision approaching the atomic scale. Sec-
ondly, advances in nanophotonics, plasmonics, and metasur-
faces have enabled precise control of light-matter interactions
down to the nanoscale. Frontiers in the science of new materi-
als increasingly focus on novel phenomena and properties that
emerge in the limit of extreme quantum confinement and low
dimensionality. Reduction of three-dimensional (3D) materi-
als to their two-dimensional (2D) equivalents, a single atomic
layer, results in qualitatively different properties compared to
bulk or even few-layered materials. Well-known examples in-
clude graphite exhibiting Dirac points in its monolayer equiv-
alent, graphene, and the indirect to direct band-gap transition
in bulk vis-à-vis monolayer MoS2. Further, the range of pos-
sible optical and electronic phenomena is especially rich in
these materials due to interlayer coupling in 2D material het-
erostructures. For example, optical properties can be tailored
and exotic states of matter created by altering the layering
sequence1–3 or twist angle between layers.4,5
2D conductors like graphene are particularly interesting
for their unique optical properties.6–14 The surface plas-
mon resonance of 2D and ultra-thin conductors exhibits a
drastically different plasmon dispersion relation from bulk
3D conductors, with an order of magnitude higher mode
confinement.15 Consequently, 2D materials are expected to
introduce a paradigm shift in photonics and optoelectronics,
promise
of
Delivering
2D plasmonics
condensing optical phenomena to the few nanometer scale
and enabling strong interaction between quantum emitter and
plasmons.16,17 However, the low intrinsic carrier densities and
strong optical-phonon scattering in known 2D conductors so
far limit the regime of low-loss 2D plasmonics to mid-infrared
frequencies, approximately one order of magnitude below the
visible spectrum.18
the
and
nanophotonics19,20 to the visible region while retaining low
loss and long propagation lengths, requires true 2D met-
als with carrier densities two orders of magnitude higher
than present-day 2D conductors (which are doped semi-
metals) and semiconductors, and without optical-phonon
losses. Model calculations of single-layer Ag and Au, that
treat the hypothetical 2D metal as a 2D electron gas at the
jellium level,21 or simply as a conductive sheet with proper-
ties extrapolated from its bulk dielectric function,6,22 already
show tremendous potential for this class of materials. How-
ever, there are two fundamental limitations with such model
calculations. First, the all-important scattering time that de-
termines loss in the material is unknown and treated as an
empirical parameter, at best extrapolated from its the bulk
value, while scattering times in deposited thin films of metals
decrease with film thickness.23–25 Second, and more impor-
tantly, it is unclear from previous model calculations if the
material would remain stable in its monolayer form.
Our work overcomes these fundamental limitations in lit-
erature to calculate a new class of monolayer plasmonic met-
als. Here, we use ab initio calculations based on density-
functional theory to show that a monolayer of Ag atoms can
form a stable 2D hexagonal close-packed lattice, which we
henceforth refer to as Argentene. Furthermore, from first-
principles electron-phonon scattering calculations, we pre-
dict that the momentum relaxation time in single-crystalline
Argentene not only matches the value of perfect bulk Ag, but
that it in fact exceeds it by a factor of three! Correspondingly,
the conductivity of Argentene is three times larger than bulk
Ag and is comparable to the best-case optimally-doped val-
ues for graphene. Finally, we show that Argentene particularly
shines in its optical response, because the absence of optical-
phonon scattering allows the high relaxation time to persist to
high frequencies, unlike in graphene where it sharply drops
off past 0.2 – 0.5 eV photon energies. With these ab initio di-
electric functions, we show that Argentene exhibits low-loss
highly-confined plasmons extending to the visible regime.
The experimental verification of the properties predicted
here requires the identification of suitable synthesis and de-
position techniques and possibly stabilizing substrates for re-
liable, single-crystalline growth of noble-metal monolayers.
At least two points are encouraging in this regard: (1) we
predict that free-standing Argentene is thermodynamically
stable with a 0.16 eV barrier, and (2) previous work26–31 on
epitaxial growth and stabilization of noble-metal nanostruc-
tures already support the practical feasibility of fabrication.
Argentene, a single close-packed atomic layer of Ag atoms,
exhibits the band structure of a nearly-perfect 2D electron gas
for electrons near the Fermi level, as shown in our density-
functional theory (DFT) calculations in Fig. 1a. Its quadratic
dispersion relation is disrupted by d-bands that start 3.5 eV
below the Fermi level, remarkably similar to 3D bulk Ag.
Charge transport in Argentene is, however, markedly dif-
ferent from bulk Ag. We find the electron-phonon scattering
time, which critically determines electrical conductivity and
plasmonic quality factors, to be a factor of three larger in
Argentene as shown in Fig. 1b. Note that conventional expec-
tations from charge transport in thin imperfect films of no-
ble metals that scattering time decreases with film thickness
is due to surface and grain boundary scattering.23–25 These
non-ideal effects are highly sensitive to growth techniques,
substrates, and over-layers; here we focus on the potential of
the ideal material and consistently compare results for perfect
single crystals in both the 2D and 3D cases.
In fact, a more interesting comparison for Argentene is
the best-known 2D conductor, graphene. Note that through-
out the rest of the Article we compare and contrast Ar-
gentene and graphene for consistency, though we recognize
that graphene plasmonics has well-known limitations. Per-
fect undoped graphene exhibits scattering time exceeding pi-
coseconds (Fig. 1b), but a very low carrier density (Fig. 1c)
and hence only a modest 2D conductivity (Fig. 1d). Mak-
ing graphene into a useful conductor or plasmonic material
requires doping to increase the carrier density, but this also
increases the density of states at the Fermi level and the phase
space for electron-phonon scattering, resulting in a reduction
in scattering time with increasing carrier concentration. This
results in a peak 2D conductivity of 0.06 Ω−1 at an opti-
2
Fig. 1. Structure and DC carrier transport in Argentene: a, Argen-
tene is a single hexagonal-close packed atomic layer of Ag with a 2D
electron-gas-like band structure extending till the d-bands 3.5 eV be-
low the Fermi level. b, Electron-phonon momentum relaxation time
for DC transport, τD0 in Argentene is three times larger than bulk Ag,
and nominally independent of the Fermi level position, and is com-
parable to that of heavy ideally-doped graphene (no dopant scatter-
ing). c, Argentene's carrier density is an order of magnitude greater
than graphene at practical doping levels, resulting in d, a larger 2D
conductivity through most of the relevant range. (For comparison, re-
sults for bulk Ag in c and d are normalized to a thickness equal to its
(111)-layer separation t2D ≈ 2.36 Å.) Furthermore, Argentene and
bulk Ag do not require doping to conduct; the effect of Fermi level
modification in these materials is only shown for consistency.
mal doping level that corresponds to a Fermi level 0.3 eV
away from the Dirac point and a carrier density ∼ 0.1 nm−2
= 1013 cm−2. Note that for a fair comparison with single-
crystal Argentene, we consider ideal doping in graphene ne-
glecting dopant scattering in order to represent the best-case
scenario for graphene. Argentene matches this best-case 2D
conductivity of 0.06 Ω−1 without need for doping.
For comparison, we also show predictions for Argentene
– 6– 4– 2 0 2 4 6ΓMKΓε – εF (eV) 10 100 1000 0.1 1 10 0.01 0.1–1.5–1.0– 0.50.00.51.01.5aτD0 (fs)bn (nm–2)cσ2D (Ω–1)dDoping εF – εF0 (eV)GrapheneArgenteneBulk Ag "monolayer" 3
Fig. 3. Frequency-dependence of momentum-relaxation time:
The electron-phonon momentum (Drude) relaxation time τD(ω) of
graphene (Fermi levels εF = 0.3 and 0.5 eV) is initially substantially
than Ag and Argentene in the low-frequency limit, but drops dramat-
ically at frequencies above 0.2 eV, falling below that of Argentene
and Ag, due to strong optical-phonon scattering in graphene. Argen-
tene's relaxation time is consistently three times larger than bulk Ag;
both exhibit only minor reduction with increasing frequency due to
the absence of an analogous optical-phonon scattering mechanism
in these materials.
temperature) for free-standing Argentene; this can be doubled
when bound to a van der Waals substrate (eg. hexagonal boron
nitride) with a modest binding energy per atom ∼ 0.2 eV. Cal-
culations of Argentene's stability on specific substrates and
possible growth mechanisms are subjects of ongoing work,
and we focus here next on the remarkable plasmonic proper-
ties of Argentene.
Transitioning from DC and low-frequency transport prop-
erties to optical and plasmonic response of metals, the rele-
vant material response function is the frequency-dependent
complex conductivity (closely related to the dielectric func-
tion via σ(ω) = −iω((ω) − 0)), which can be written as
σ(ω) =
σ0τ−1
D0
D (ω) + iω
τ−1
+ σd(ω),
(1)
is
the
where σ0 and τD0 are the DC conductivity and Drude
momentum-relaxation time, τD(ω)
frequency-
dependent momentum relaxation time that encapsulates in-
traband phonon-assisted contributions to the optical response
and σd(ω) is the contribution due to direct optical transitions.
We emphasize all of these quantities are calculated from
a fully first-principles treatment of electrons and phonons,
explicitly including all bands, modes, and coupling matrix
elements, as discussed in the Methods section. For 2D mate-
rials, we consider the corresponding 2D conductivities (σ2D)
rather than the bulk conductivities (σ).
The frequency-dependent relaxation time τD(ω) directly
determines the intraband loss, which along with interband
losses in σd(ω), limit the plasmonic performance. Figure 3
shows that graphene's unparalleled DC relaxation time drops
Fig. 2. Stability of Argentene from first-principles: a, Phonon
bandstructure without imaginary frequencies indicate a mechanically
stable 2D layer, even when free-standing. b, Kinetic stability towards
island formation, evaluated using the barrier for an atom in-plane to
jump on top of the 2D layer; path is sketched in c. The 0.16 eV bar-
rier for free-standing Argentene increases as the binding energy per
atom Eb to a hypothetical van der Waals substrate increases, allow-
ing the single atomic layer to be further stabilized on an appropriately
chosen substrate.
and bulk Ag if its Fermi level were changed by doping and
find that its properties are virtually unchanged. The scattering
time is roughly constant with change of Fermi level, consis-
tent with the flat density of states, and hence phase space
for electron phonon scattering, of a 2D free-electron sys-
tem. (The reduction near 1 eV increase of Fermi level arises
from the unoccupied band that starts 1 eV above the Fermi
level in the band structure shown in Fig. 1a.) The scattering
g(ε) ∝ √
time decreases with increasing Fermi level in bulk Ag due to
ε for a 3D free-electron system, while in graphene,
it decreases as the Fermi level moves away from the Dirac
point (at energy ε0) due to increase in the density of states as
g(ε) ∝ ε − ε0. We re-iterate that Argentene does not require
doping since it is a true 2D metal, whereas graphene is a
semi-metal, and all subsequent results focus on undoped Ar-
gentene. Similarly, for comparison, we focus on undoped bulk
Ag and graphene at its best-case ideal doping of 0.3 – 0.5 eV
in the remainder of this work.
Next, ab initio DFT calculations show that Argentene is
mechanically stable as a free-standing 2D material, as in-
dicated by the absence of any imaginary frequencies in the
phonon band structure in Fig. 2a. Fig. 2b reinforces this sta-
bility by showing the barrier for an atom in the plane of
Argentene to hop onto the next layer, as sketched in Fig. 2c,
which would be the process by which a single monolayer
could transform to islands of multiple layers or nanoparti-
cles. We find a kinetic barrier of 0.16 eV (≈ 6kBT at room
0 10 20 30ΓMKΓεphonon (meV)a0.00.10.20.3 0 1E – E0 (eV)Reaction coordinatebFreeEb = 0.1 eVEb = 0.2 eV 0 1c 10 100 1000 0.01 0.1 1Energy -ω (eV) Drude lifetime τD(ω) (fs) ArgenteneBulk AgGraphene (εF = 0.5 eV)Graphene (εF = 0.3 eV) 4
disperses with frequency as q = [(2iε0ω/σ2D)2 + k2
0]1/2 (free-
space wave vector, k0 ≡ ω/c), reducing to q (cid:39) 2iε0ω/σ2D
in the quasistatic limit.7,32,33 Figure 4 depicts the plasmon
dispersion of of Argentene, doped graphene, and nanometric
slabs of bulk Ag of thickness t (spanning integer-multiples
of Ag's (111)-layer separation t2D ≈ 2.36 Å). The plasmon's
dispersion coincides with the peaks of the imaginary part of
the transverse-magnetic (TM) reflection coefficient (Fig. 4a);
the associated peak width relates directly with the plasmon
lifetime and propagation length.
At small excitation energies, the 2D layers exhibit the well-
known ω ∝∼ q1/2 dispersion. This furnishes them with sub-
stantially larger wave vectors (at fixed frequency)-and hence
stronger confinement-than their finite-thickness slab coun-
terparts (Fig. 4b). Given the manifold opportunities facilitated
by high confinement, the attraction of the monolayer limit is
manifest: confinement is more than an order of magnitude
larger in Argentene than the 16 layer Ag slab. The enhance-
ment is immediately appreciable from a small-thickness anal-
ysis of the slab's dispersion equation,34 which demonstrates
that, classically, q(ω) ∝∼ 1/t for t (cid:28) k0 (cid:28) q. Coincidentally,
the dispersion Re q(ω) of the Ag slab of thickness t = t2D, i.e.
the "monolayer" bulk Ag slab (henceforth, ML-Ag), exhibits
a perhaps counter-intuitively good agreement with Argen-
tene. This, however, is to be expected: for a 2D carrier den-
sity n, the plasmon dispersion is Re q ∝∼ ω2/ns in the Drude
regime (with s = 1 in metals and s = 1/2 in graphene, cf.
its Dirac dispersion).33 Accordingly, the observed agreement
merely reflects the approximate equality of n in Argentene
and n3Dt2D in ML-Ag. Argentene distinguishes itself from
graphene in two ways: (1) its plasmon frequencies exceed
graphene's significantly, extending into the near-infrared and
above, and (2) its confinement is smaller at equal frequen-
cies. Since Re q ∝∼ 1/ns, both differences are consequences
of Argentene's higher carrier density.
The ultimate merits of a given plasmonic material de-
pend on use-case. In Fig. 5a-c, we consider three distinct
figures of merit (FOMs), spanning the gamut of typical
plasmonic applications: confinement ratio Re q/k0, effec-
tive propagation length Re q/Im q, and a bound-related FOM
Ω ≡ Z0σ2D2/2 Re σ2D (Z0, impedance of free space).35
The latter FOM warrants further explication than the former
two, which are well-established plasmonic FOMs: Ω bounds
the optical response of arbitrarily shaped 2D resonators-
e.g., the extinction efficiency is ≤ 2Ω, the Purcell factor is
≤ 3
4(k0d)−4Ω, and the radiative heat flux (between identi-
cal bodies) relative to the black-body limit is ≤ 6(k0d)−4Ω2,
for emitter–body and body–body separations d. In the qua-
sistatic limit, the bound-related FOM is Ω (cid:39) k0/Im q, i.e.
a complementary effective propagation length, taken rela-
tive to its free-space wavelength. Interestingly, the two con-
ventional FOMs, confinement ratio and effective propaga-
tion length, are similarly simply related to the conductiv-
ity in the quasistatic limit: Re q/Im q (cid:39) Im σ2D/Re σ2D and
Re q/k0 (cid:39) 2 Im σ2D/Z0σ2D2. Thus, each FOM convey, ap-
Fig. 4. Plasmon dispersion of Argentene, doped graphene (εF =
0.3 and 0.5 eV), and thin slabs of bulk Ag: a, Imaginary part of
the TM reflectivity Im rtm (logarithmic, clamped colorscale) whose
peaks reflect the existence of plasmon modes. b, Corresponding
plasmon dispersion (solved for complex q and real ω) for Argen-
tene, graphene, and bulk Ag slabs (thicknesses range over t = 2nt2D
for n = 0, 1, . . . , 6 and ∞). The confinement of Argentene plasmons
compare well with that predicted from extrapolation of bulk Ag prop-
erties down to a monolayer's thickness. In thicker slabs, however,
confinement is order of magnitudes lower. Graphene hosts highly
confined plasmon in the mid-infrared spectrum; Argentene's plas-
mons extend into the near-infrared and above.
by two orders of magnitude over the ω ∼ 0.2 – 0.5 eV fre-
quency range, arising from scattering with optical phonons
with a maximum energy ∼ 0.2 eV. In contrast, both bulk Ag
and Argentene do not have optical phonons and show a much
more modest reduction in their relaxation times, around a
factor of two, from DC to optical frequencies. This leads to a
cross-over at ω ∼ 0.2 V, where Argentene takes over as the
lower-loss material. This low-loss regime persists well into
the visible region till the interband threshold ∼ 3.5 eV in both
Argentene and Ag, beyond which direct transitions generate
high losses.
The plasmon dispersion of a given 2D layer is directly
related to the layer's frequency-dependent 2D conductivity
σ2D(ω). Specifically, the in-plane plasmon wave vector q
10–310–210–1Wave vector Req (nm–1)10–1100101102103104Plasmon wavelength λp (nm)103104Free-space wavelength λ (nm)Energy -ω (eV) Light coneGrapheneBulk Ag (t = t2D)ArgenteneBulk Ag (t = ∞) 2t2D4t2D8t2D16t2D32t2D64t2DEnergy -ω (eV)Argentene00.20.4012Wave vector q (nm–1)Bulk Ag (t = t2D)00.20.4Graphene(εF = 0.5 eV)000.20.4Bulk Ag (t = 10t2D) 0.2ImrTM< min> maxabεF = 0.5 eV0.3 eV 5
tween ML-Ag and Argentene underscores the need for full,
microscopic accounts of the electron-phonon interaction in
the quantitative assessment of novel 2D plasmonic materials.
The preceding discussion also explains the differences
noted between graphene and Argentene: graphene's confine-
ment exceeds Argentene's due to its lower carrier density,
at the cost of lower operation frequencies. In contrast, the
operation range of graphene's plasmons is further restricted
in practice, however, due to the onset of strong electron-
phonon interaction with graphene's optical phonon branch at
0.2 eV.6,37 At room-temperature, this interaction significantly
broadens graphene's plasmons, near and above the threshold
(at cryogenic temperatures, strong relaxation is thresholded to
energies (cid:38)0.2 eV, with Im q decreased markedly below). Ar-
gentene, a single-atom Bravais lattice, doesn't support optical
phonons and consequently isn't similarly impacted. Jointly,
the three FOMs of Fig. 5a-c underscore the appeal of Argen-
tene for plasmonics, the importance of microscopic accounts
in theoretical assessments of novel plasmonic materials, and
the advances attainable by pursuing a still deeper pool of
plasmonic platforms.
In summary, our first-principles calculations reveal that
Argentene, a single hexagonal close-packed atomic-layer of
Ag, is mechanically stable in free-standing form. Perfect Ar-
gentene crystals will exhibit three times the momentum re-
laxation time and conductivity as bulk Ag, roughly compa-
rable to the best-case scenario for ideally-doped graphene.
While graphene's long scattering time and low loss regime
are limited to frequencies with ω (cid:46) 0.2 eV due to optical-
phonon scattering, Argentene's low loss regime extends well
into the visible spectrum till an interband threshold ∼ 3.5 eV.
Consequently, Argentene exhibits highly-confined plasmons
with long propagation lengths at much higher frequencies.
Realizing the promise of ultra-confined, long-lived, visible-
spectrum 2D plasmonics with Argentene, requires the identi-
fication of suitable substrates and techniques to reliably grow
single crystals of noble-metal monolayers, while simultane-
ously retaining its superior electron-phonon scattering prop-
erties.
ACKNOWLEDGMENTS
The authors thank Professors Efthimios Kaxiras (Harvard
University), John Pendry (Imperial College, London), Ling
Lu (Chinese Academy of Science), Toh-Ming Liu (RPI), and
Daniel Gall (RPI) for fruitful discussions on 2D plasmonic
materials, potential monolayer growth techniques, and car-
rier scattering properties. RS acknowledges start-up funding
from the Department of Materials Science and Engineering
at Rensselaer Polytechnic Institute. TC acknowledges support
from the Danish Council for Independent Research (Grant
No. DFF–6108-00667). NR was supported by Department
of Energy Fellowship DE-FG02-97ER2530 (DOE CSGF).
The research of JDJ and MS was supported as part of the
Fig. 5. Plasmonic figures of merit in Argentene, doped graphene
(εF = 0.3 and 0.5 eV), and "monolayer" bulk Ag: a, Confinement
ratio Re q/k0. b, Effective propagation length Re q/Im q. c, Bound-
related FOM Ω ≡ Z0σ2D2/2 Re σ2D. d, Real and imaginary parts
2D ≡ e2/). Argentene
of the 2D conductivity σ2D (in units of σ0
offers roughly an order of magnitude increase in maximal effec-
tive propagation length over graphene – whose response above
0.2 eV (below 6 µm) is dominated by electron-phonon interaction
with its optical phonon branch – similar confinement ratios, and supe-
rior bound-FOM. Argentene's plasmonic properties are optimal near
the 1.55 µm telecommunication band. Relative to bulk-extrapolated
monolayer properties, i.e. to bulk Ag slabs of thickness t = t2D, Ar-
gentene exhibits anomalously improved plasmonic attributes.
proximately, distinct ratios of the complex components of the
conductivity (Fig. 5d).
Despite these commonalities, the three FOMs individu-
ally present contrasting pictures. In terms of confinement
(Fig. 5a) doped graphene surpasses Argentene, while Argen-
tene and ML-Ag agree well. Conversely, graphene's prop-
agation ratios (Fig. 5b) fall short of Argentene's, except in
the low-frequency region ((cid:46) 0.2 eV). Similarly, the propa-
gation ratios of Argentene and ML-Ag exhibit significant
discrepancies. Analogous observations are evident for the
bound-related FOM (Fig. 5c). This FOM-dependent contrast
between Argentene and ML-Ag conclusions reflects a funda-
mental difference in the essential dependence of each FOM:
confinement, on one hand, is a comparatively simple theoret-
ical construct, depending mainly on macroscopic properties,
specifically the carrier density n, as discussed previously.
On the other hand, propagation ratios (and the bound-related
FOM) sensitively depend on relaxation mechanisms, which
are intrinsically of a microscopic nature. Specifically, relax-
ation can occur either through direct transitions36 or through
electron-phonon interaction. The latter is incorporated here
via a frequency-dependent relaxation time τ(ω), computed
from the Eliashberg spectral function. The discrepancy be-
020406080100204060800369ArgenteneGraphene (εF = 0.5 eV)Graphene (εF = 0.3 eV)Bulk Ag (t = t2D)012012Wavelength λ (m) Wavelength λ (m) abcdEnergy -ω (eV) Energy -ω (eV) Bound FOM Z0σ2D2/2Reσ2DReσ2D/σ2DImσ2D/σ2DPropagation Req/ImqCon(cid:30)nement Req/k00.75 0.5 1.5∞0.75 0.5 1.5∞0123012300 Army Research Office through the Institute for Soldier Nan-
otechnologies under contract no. W911NF-18-2-0048 (pho-
ton management for developing nuclear-TPV and fuel-TPV
mm-scale-systems), and also supported as part of the S3TEC,
an Energy Frontier Research Center funded by the US De-
partment of Energy under grant no. de-sc0001299 (for funda-
mental photon transport related to solar TPVs and solar-TEs).
PN acknowledges start-up funding from the Harvard John A.
Paulson School of Engineering and Applied Sciences.
This research used resources of the National Energy Re-
search Scientific Computing Center, a DOE Office of Sci-
ence User Facility supported by the Office of Science of the
U.S. Department of Energy under Contract No. DE-AC02-
05CH11231, the Research Computing Group at Harvard Uni-
versity as well as resources at the Center for Computing In-
novations (CCI) at Rensselaer Polytechnic Institute.
AUTHOR INFORMATION
The authors declare no competing financial interests.
METHODS
Computational details
We perform first-principles calculations of electrons,
phonons and their matrix elements in the open-source JDFTx
software,38 using norm-conserving pseudopotentials39 at a
kinetic energy cutoff of 30 Hartrees, the Perdew-Burke-
Ernzerhof generalized gradient approximation40
to the
exchange-correlation functional and truncated Coulomb in-
teractions to isolate periodic images for the 2D systems.41
We use the rotationally-invariant DFT+U formulation42 with
U = 2.45 eV for Ag to obtain the correct d-band positions.43
We use 24 k-points along each periodic direction for Bril-
louin zone integration, along with Fermi-Dirac smearing with
width 0.01 Hartrees for Fermi surface sampling in the DFT
calculations. Phonon calculations employ a 4 × 4 × 4 super-
cell for bulk Ag and 6 × 6 × 1 supercell for Argentene and
graphene. All electronic and phononic properties are con-
verted to a maximally-localized Wannier function basis,44 and
then interpolated to extremely fine k and q meshes (∼ 1000
points along each periodic direction) for all subsequent per-
turbation theory calculations outlined below for optical re-
sponse and carrier scattering properties. These subsequent
calculations employ electron and phonon occupation factors
at room temperature, 298 K (with kBT ∼ 0.00094 Hartrees).
Conductivity and DC transport
We evaluate the low-frequency conductivity using a full-
band relaxation time approximation to the linearized Boltz-
mann equation,45–47
Þ
σ =
e2gs dk
(2π)d
BZ
n
∂ fkn
∂εkn
(vkn ⊗ vkn)τ p
kn,
6
(2)
where ε, f and v are the energies, Fermi occupations, and
velocities of electrons with wave-vector k in band n, and
gs = 2 is the spin-degeneracy factor. The above expression
automatically evaluates to the 3D conductivity σ for bulk Ag
with d = 3, while it is the 2D conductivity σ2D for Argentene
and graphene with d = 2. (For the isotropic 3D or 2D materi-
als considered here, σ reduces to the scalar σ = Tr σ/d, for
which v ⊗ v above can be replaced by v2/d.) In turn, the mo-
mentum relaxation rate for each electronic state is evaluated
using Fermi's rule,
(τ p
kn
)−1 =
2π
Þ
BZ
(cid:18)
(cid:18)
n(cid:48)α±
Ω dk(cid:48)
(2π)d
×
×
(cid:19)(cid:19)(cid:12)(cid:12)(cid:12)g
(cid:12)(cid:12)(cid:12)2
δ(εk(cid:48)
n(cid:48) − εkn ∓ ωk(cid:48)−k,α)
1
∓
nk(cid:48)−k,α +
2
1 − vkn · vk(cid:48)
n(cid:48)
vknvk(cid:48)
n(cid:48)
− fk(cid:48)
n(cid:48)
k(cid:48)−k,α
k(cid:48)
n(cid:48),kn
,
(3)
(cid:18) 1
(cid:19)
2
where ωqα and nqα are energies and Bose occupation factors
of phonons with wave-vector q (= k(cid:48)−k above by momentum
conservation) and polarization index α, Ω is the unit cell
k(cid:48)−k,α
volume (or area when d = 2), g
n(cid:48),kn are the electron-phonon
k(cid:48)
matrix elements and the sum over ± accounts for phonon
absorption and emission. The final factor accounts for the
scattering angle in the momentum relaxation rate. We also
report the average momentum relaxation time,
vkn2τ p
kn
vkn2
τD0 =
Þ
Þ
(4)
n
BZ
gs dk
(2π)d
gs dk
(2π)d
BZ
,
∂ fkn
∂εkn
∂ fkn
∂εkn
n
where the weight factors reflect the relative contributions of
various electronic states to the conductivity.
Optical response
The optical response can be expressed in terms of the AC
conductivity
σ(ω) =
σ0τ−1
D0
D (ω) + iω
τ−1
+ σd(ω),
(5)
where the first term captures the Drude response including the
effect of phonon-assisted intraband transitions, while the sec-
ond term captures the effect of direct optical transitions. We
evaluate the second term directly using Fermi's golden rule
for the real part (imaginary part of corresponding (ω)),43
Þ
× δ(εkn(cid:48) − εkn − ω)(cid:16)vk∗
gs dk
(2π)d
( fkn − fkn(cid:48))
n(cid:48)n
BZ
(cid:17)
,
(6)
n(cid:48)n ⊗ vk
n(cid:48)n
Re σd(ω) =
πe2
0ω
where vk
n(cid:48)n are the matrix-elements of the velocity opera-
tor. We then evaluate the imaginary part from it using the
Kramers-Kronig relation. Above the energy-conserving δ-
function is broadened to a Lorentzian due to carrier linewidths
from electron-electron and electron-phonon scattering, which
we also calculate using the same first-principles framework.45
In the first term above, we capture the intraband re-
sponse including phonon-assisted transitions by evaluating
the frequency-dependent momentum relaxation rate from the
Eliashberg spectral function,48 generalized here to finite tem-
perature as
D (ω) =
−1
Above g(εF) is the density of electronic states at the Fermi
level, and we define bT(ε) ≡ ε/(1 − e−ε/kBT) and the dimen-
sionless
qαbT(ω − ωqα).
Gp
g(εF)bT(ω)
dq
(2π)d
Þ
2π
BZ
τ
α
(cid:19)
which represents the total coupling of each phonon mode to
electronic states near the Fermi level. (Gp
qα is the weight of a
phonon mode in the 'transport Eliashberg spectral function',
which accounts for momentum scattering angle compared
to the conventional Eliashberg spectral function.48) Finally,
the numerator in the first term of Eq. (5) is effectively the
Fermi-surface-integrated square velocity,
σ0
τD0
=
e2gs dk
(2π)d
BZ
δ(εkn − εF)(vkn ⊗ vkn),
(8)
Þ
essentially the full-bands generalization of
g(εF)v2
metals.
the term
F/d that appears in the Drude theory of d-dimensional
∗ [email protected]
† [email protected]
1 K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotke-
vich, S. V. Morozov, and A. K. Geim, Proc. Natl. Acad. Sci. U.
S. A. 102, 10451 (2005).
2 M. N. Gjerding, P. Mohnish, and K. S. Thygesen, Nature Comm.
8, 15133 (2016).
qα ≡
Gp
Þ
nn(cid:48)
BZ
(cid:12)(cid:12)(cid:12)2(cid:18)
gsΩ dk
(2π)d
1 − vkn · v(k+q)n(cid:48)
qα(k+q)n(cid:48),kn
vknv(k+q)n(cid:48)
× δ(εkn − εF)δ(ε(k+q)n(cid:48) − εF),
(7)
(cid:12)(cid:12)(cid:12)g
n
Plasmonic properties
7
2D layers The optical response of a 2D layer is dictated
by the frequency-dependent 2D conductivity σ2D(ω): it links
the induced surface current K linearly to the (total) in-plane
electric field E(cid:107). Paired with Maxwell's equations, this con-
stitutive relation is sufficient to analyze the properties of any
2D polaritons, 2D plasmons included. If a plasmon exists, it
manifests as a pole in the monolayer's TM reflection coeffi-
cient7,32,33
rtm(q, ω) =
q⊥σ2D(ω)
2ε0ω + q⊥σ2D(ω),
(9)
with in-plane, out-of-plane, and free-space wave vectors q,
0 − q2, and k0 ≡ ω/c, respectively. The poles dictate
q2⊥ ≡ k2
0]1/2.
the plasmon dispersion equation, q = [(2iε0ω/σ2D)2 + k2
Finite slabs Our considerations of finite Ag slabs (de-
fined as slab-like for thicknesses t > t2D), employ the bulk
dielectric function (ω) of Ag. The TM reflection coefficient
of the vacuum-clad slab is computed from standard formula,
see e.g. Ref. 49. For a metallic slab, the associated TM reflec-
tion coefficient exhibits two distinct pole species, reflecting
the existence of two plasmonic branches: one low-energy
branch (associated with a charge-even mode, or, equivalently
an odd H-field) and a high-energy branch (associated with a
charge-odd mode, equivalently an even H-field). In the limit
of vanishing thickness, t → 0, the charge-even mode asymp-
totically approaches the 2D layer's dispersion: thus, this is the
mode of interest for comparisons with 2D plasmonics (conse-
quently, the charge-odd mode is omitted here). Its dispersion
equation is:34
(cid:18)−iq(cid:48)⊥t
(cid:19)
2
coth
= − (ω)q⊥
q(cid:48)⊥
,
(10)
with out-of-plane wave vectors q2⊥ ≡ k2
0 − q2 and (q(cid:48)⊥)2 ≡
ε(ω)k2
0 − q2 associated with the vacuum-cladding and slab-
regions, respectively. Equation (10) is a transcendental equa-
tion; in practice, we solve it by numerical minimization.
(2015).
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|
1808.05723 | 1 | 1808 | 2018-08-17T01:22:49 | High responsivity, low dark current ultraviolet photodetector based on AlGaN/GaN interdigitated transducer | [
"physics.app-ph"
] | An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a record high normalized photocurrent-to-dark current ratio (NPDR, $6\times10^{14}$). In addition, we observe a high responsivity ($7,800$ A/W) and ultraviolet-visible rejection-ratio ($10^{6}$), among the highest reported values for any GaN photodetector architecture. We propose a gain mechanism to explain the high responsivity of this device architecture, which corresponds to an internal gain of $26,000$. We argue that the valence band offset in the AlGaN/GaN heterostructure is essential in achieving this high responsivity, allowing for large gains without necessitating the presence of trap states, in contrast to common metal-semiconductor-metal (MSM) photodetector architectures. Our proposed gain mechanism is consistent with measurements of the scaling of gain with device channel width and incident power. In addition to high performance, this photodetector architecture has a simple two-step fabrication flow that is monolithically compatible with AlGaN/GaN high electron mobility transistor (HEMT) processing. This unique combination of low dark current, high responsivity and compatibility with HEMT processing is attractive for a variety of UV sensing applications. | physics.app-ph | physics | High responsivity, low dark current ultraviolet photodetector based on
AlGaN/GaN interdigitated transducer
Peter F. Satterthwaite,1,a) Ananth Saran Yalamarthy,2,a), Noah A. Scandrette,3 A.
K. M. Newaz,3 and Debbie G. Senesky1,4,b)
1Department of Electrical Engineering, Stanford University, Stanford, California, 94305, USA
2Department of Mechanical Engineering, Stanford University, Stanford, California, 94305, USA
3Department of Physics and Astronomy, San Francisco State University, San Francisco, California, 94132, USA
4Department of Aeronautics and Astronautics, Stanford University, Stanford, California, 94305, USA
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface
as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a record
high normalized photocurrent-to-dark current ratio (NPDR, 6 x 1014). In addition, we observe a high responsivity (7,800 A/W)
and ultraviolet-visible rejection-ratio (106), among the highest reported values for any GaN photodetector architecture. We
propose a gain mechanism to explain the high responsivity of this device architecture, which corresponds to an internal gain of
26,000. We argue that the valence band offset in the AlGaN/GaN heterostructure is essential in achieving this high responsivity,
allowing for large gains without necessitating the presence of trap states, in contrast to common metal-semiconductor-metal
(MSM) photodetector architectures. Our proposed gain mechanism is consistent with measurements of the scaling of gain with
device channel width and incident power. In addition to high performance, this photodetector architecture has a simple two-
step fabrication flow that is monolithically compatible with AlGaN/GaN high electron mobility transistor (HEMT) processing.
This unique combination of low dark current, high responsivity and compatibility with HEMT processing is attractive for a
variety of UV sensing applications.
_____________________________
a) P. F. Satterthwaite and A. S. Yalamarthy contributed equally to this work
b) Author to whom correspondence should be addressed: [email protected]
UV photodetectors have applications in diverse fields, including combustion flame detection, UV
astronomy and satellite positioning.1,2 GaN is an appealing materials platform for manufacturing UV
photodetectors due to the maturity of GaN high electron mobility transistor (HEMT) fabrication
technology, in addition to its ability to operate in high-temperature and radiation-rich environments.3 In
most applications, the ideal photodetector would exhibit a high responsivity to maximize the signal, in
addition to a low dark current to minimize quiescent power. A performance metric which simultaneously
captures these two values is the normalized photocurrent-to-dark current ratio (NPDR), defined as the
ratio of responsivity to dark current, with units of 1/W.4,5 Numerous photodetector architectures2,6 -- 14 have
been demonstrated in GaN, with a broad range of reported responsivities and NPDRs, as summarized in
Table 1. Table I additionally reports the UV-visible rejection-ratio, another important performance metric
1
which determines the cross-sensitivity of the photodetector to visible light. A distinction can be drawn
between devices with a responsivity that corresponds to less than 100% quantum efficiency7,8 (0.29 A/W
for 365 nm illumination), and those with a responsivity that exceeds this value.6,9 -- 13 In the latter category
of photodetectors, which includes photoconductors,10 phototransistors9,15 and some metal-semiconductor-
metal (MSM) photodetectors,6,16 an internal gain mechanism must exist where each incident photon
induces more than one electron in the conduction band. The gain (𝐺) is defined as the ratio of charge
carriers to the photon flux:17
𝐺 =
ℎ𝑐
𝐼
𝑒𝜆
𝑃
(1)
where 𝐼 is the photocurrent, 𝜆 is the wavelength of incident radiation and 𝑃 is the incident power. One
particularly high gain photodetector architecture is the phototransistor; AlGaN/GaN phototransistors have
been shown to achieve gains as high as 170,000.9 Though these devices have a high gain, their fabrication
requires the use of both n-and p-doped GaN.9 Due to the high activation energies of all known acceptor-
type dopants in GaN,18 it is desirable to fabricate photodetectors which do not require doping. It is further
desirable to fabricate devices compatible with HEMT fabrication, in order to leverage mature GaN
technology and enable monolithic integration. Previous HEMT photodetectors,11,19 which leverage the
modulation of the AlGaN/GaN 2DEG sheet density under UV illumination, have been shown to have a
high gain, however such devices also have high dark current, leading to some of the lowest NPDRs among
reported devices (~106). Recent work12,13 has shown that by introducing an intrinsic GaN channel between
two 2DEG electrodes, a high NPDR can be achieved. Understanding the gain mechanism of such
photodetectors is important for maturing this promising class of devices.
In this work, we present such a device with a record high NPDR (6x1014). In addition, the device has
a responsivity (7,800 A/W), and UV-visible rejection-ratio (106) that are among the highest reported
values. We propose that our device has a similar gain mechanism to that of a phototransistor, in a device
architecture that is significantly simpler to fabricate, requiring two masks, and no doping. Evidence for
this gain mechanism is provided by investigating the scaling of gain with channel length and incident
power.
Devices were fabricated on an AlGaN/GaN-on-Si wafer (DOWA, Inc.) grown by metal-organic
chemical vapor deposition (MOCVD). The III-nitride stack, illustrated schematically in Fig. 1a, consists
of a 1.5-µm-thick strain management buffer structure and an active 1.2-µm-thick GaN layer grown on top
of Si (111). Subsequent to the growth of the GaN layer, formation of the 2DEG was accomplished by
growing an epitaxial stack consisting of a 1-nm-thick AlN spacer, 30-nm-thick Al0.25Ga0.75N barrier layer
and 1-nm-thick GaN capping layer. This wafer has a manufacturer specified 2DEG mobility of 1,400
2
cm2/V-s and sheet density of 1x1013 cm-2 at room temperature. As shown in Fig. 1b, an array of 2DEG
interdigitated transducers (2DEG-IDT) was fabricated by etching AlGaN 2DEG mesa electrodes. These
5-µm-wide 2DEG electrodes were separated by 5-µm-wide intrinsic (un-intentionally doped below 1016
cm-3) GaN buffer channels. Post mesa isolation, a standard Ti/Al/Pt/Au Ohmic metal stack was deposited,
and activated with a 35 second, 850ºC anneal.20 After this two-step process, the fabrication of the 2DEG
IDT photodetectors was completed, however it should be noted that the wafer received subsequent
processing for co-fabricated devices. In particular, standard MSM photodetectors were fabricated on the
GaN buffer, using the same geometry as the 2DEG-IDT photodetectors. These devices (Pd-MSM) had
Pd/Au (40 nm/10 nm) metal fingers in place of the AlGaN mesa electrodes for comparison studies.
Responsivity measurements were taken using a 365 nm UV lamp and semiconductor parameter
analyzer (henceforth Setup I). All presented measurements were taken at room temperature. The results
of these measurements for a characteristic 2DEG-IDT and Pd-MSM device under 1.5 mW/cm2 optical
power are shown in Fig. 2a. While both devices have a comparable, low dark current of ~10 pA, the
2DEG-IDT device has significantly higher photocurrent, corresponding to a responsivity of 2,500 A/W at
5 V, in contrast to the 0.78 A/W responsivity observed in the MSM photodetector at the same bias voltage.
Though the 2DEG-IDT device has significantly higher responsivity, both devices have a responsivity
which exceeds the 100% quantum efficiency limit (0.29 A/W for 365 nm illumination), indicating the
presence of a gain mechanism in both devices.
To further probe the gain mechanism in the 2DEG-IDT device, we measured responsivity while
varying the UV intensity across four orders of magnitude. These measurements are presented in Fig. 2b.
Measurements with incident power above 0.010 mW/cm2 were DC measurements performed with Setup I,
and those with power below 0.010 mW/cm2 were AC measurements, performed using a lock-in amplifier
and a monochromated optical beam chopped at 200 Hz (henceforth Setup II). These data show that as
power increases from 0.15 µW/cm2 to 110 µW/cm2, the responsivity increases dramatically by greater
than 4 orders of magnitude, peaking at 7,800 A/W. Above 110 µW/cm2, the responsivity decreases slightly
to 2,500 A/W at 1.5 mW/cm2 This increase in responsivity with increasing incident power, and subsequent
saturation is consistent with previous reports of high gain GaN MSM photodetectors,16 however opposite
of the trend seen in phototransistors.9
Measurements of the transient response of the 2DEG-IDT device were conducted using Setup I with
an optical chopper operating at 5 Hz. These measurements, presented in Fig. 2c, demonstrate rise and fall
times of 32 ms and 76 ms, respectively, here defined as the time it takes the photocurrent to go from 10%
to 90% of its final value. It is also observed that within a 200 ms window the photocurrent does not recover
3
to its ~10 pA dark state value, indicating the presence of persistent photoconductivity,21 common to
AlGaN/GaN 2DEG photodetector devices. These rise and fall times are long relative to MSM
photodetectors with no internal gain,2 however they present a significant improvement on the 20 s rise and
60 s fall time observed in a photoconductor with comparable gain to our 2DEG-IDT device.10
Measurements of responsivity as a function of wavelength were also performed using Setup II. These
data, shown in Fig. 2d, demonstrate a high UV-visible rejection ratio of 4 x 106, with a peak responsivity
at ~362 nm. The broadband light source used in this measurement had a roughly constant intensity
between 1 and 3 µW/cm2 below the peak responsivity at 362 nm, and an increasing intensity between 3
and 28 µW/cm2 as the wavelength increased from 362 to 430 nm. Because the responsivity of the 2DEG-
IDT photodetector increases with incident power (as seen in Fig. 2), this measurement underestimates the
true UV-visible rejection ratio. The band-pass nature of the spectral responsivity of this photodetector,
where the responsivity decreases at wavelengths both below and above the GaN band gap (~365 nm), is
consistent with previous reports of phototransistors,9,15 indicating a similar gain mechanism in both
devices.
We seek to explain the gain observed in both device architectures, in particular the extraordinarily
high gain of 26,000 observed in the 2DEG-IDT. In order to understand the scaling laws of the gain
mechanisms in MSM and 2DEG-IDT photodetectors, devices were fabricated where the intrinsic GaN
channel length between the Pd and 2DEG electrodes was varied from 4 to 20 µm. Optical microscope
images of the MSM and 2DEG-IDT structures are shown in the inserts of Fig. 3a and 3b respectively.
Figures 3a and 3b show the gain vs. 1/L2, where L is the spacing between the Pd and 2DEG electrodes
respectively. These data show that while there is a clear linear relation, with zero y-intercept, between
gain and 1/L2 for the 2DEG-IDT photodetectors (Fig. 3b), the same relation does not describe the gain vs.
1/L2 relation in the MSM photodetectors (Fig. 3a). This difference in length scaling, in addition to the
vastly different response magnitudes, implies that different gain mechanisms are present in these two types
of devices.
In the standard model of gain in photoconductors, which has been used by Kumar et al.13 to describe
the gain of an InAlN/GaN device with a similar architecture to this work, gain is due to carrier
accumulation that is limited by recombination, leading to the following scaling law: 𝐺 = 𝜇𝑒𝜏𝑟𝑉 𝐿2⁄ , where
𝜇𝑒 is the electron mobility, 𝜏𝑟 is the recombination time and 𝑉 is the applied voltage. Though this model
reproduces the appropriate 1 𝐿2⁄ dependency, using a bulk mobility of 900 cm2/V-s, which is appropriate
for our unintentional doping concentration,22 a recombination time of ~3 µs is required to fit our data. This
value is three orders of magnitude larger than the previously reported ~6 ns minority carrier lifetimes in
4
GaN.23 Because the ~3 µs recombination time required to fit the standard model is unreasonable, a
different gain mechanism is needed to describe the behavior of our 2DEG-IDT devices.
The proposed gain mechanism is schematically illustrated in the band diagram for a 2DEG-IDT
photodetector presented in Fig. 3d. In the 2DEG-IDT device, an AlGaN/GaN valence band offset creates
an energetic barrier which leads to hole accumulation at this interface. This hole accumulation leads to an
electrostatic lowering of the energetic barrier for electrons in the 2DEG to escape the quantum well and
enter the conduction band (dashed line in Fig. 3d). Using only the lowermost sub-band, the number of
carriers per unit volume with sufficient energy to escape the 2DEG quantum well can be approximately
written as:
𝑛𝑒(𝜙𝑏) ≈
𝑘𝑏𝑇𝑚∗
𝜋ℏ2 exp (−
𝑞(𝜙𝑏−∆𝜙𝑏)
)
𝑘𝑏𝑇
(2)
where 𝑚∗ is the effective mass, 𝜙𝑏 is the energy separation between the Fermi level in the 2DEG and the
top of the GaN conduction band in the dark state, and ∆𝜙𝑏 is the barrier lowering due to photon-induced
hole accumulation (Fig. 3d). Assuming that all electrons with sufficient energy enter the conduction band,
and that electron conduction between the 2DEG electrodes is due to drift, the gain is found to be:
𝐺 =
𝑛𝑒(𝜙𝑏)
𝑛𝑝ℎ,𝑡𝑜𝑡
𝜇𝑒𝑉
𝐿
(3)
where 𝑛𝑝ℎ,𝑡𝑜𝑡 is the total number of photons incident on the device. Evidence for a drift model comes from
the fact that the photocurrent shown in Fig. 2a is approximately linear with applied voltage. This drift
model can further explain the 1 𝐿2⁄ dependency of gain if 𝑛𝑒(𝜙𝑏) ∝ 𝐹𝑝ℎ, where 𝐹𝑝ℎ is photon flux per
unit area, because 𝑛𝑝ℎ,𝑡𝑜𝑡 = 𝐹𝑝ℎ𝐿. Using a mobility of 900 cm2/V-s, the barrier height required to explain
the observed photocurrents is ~150 meV. This order of magnitude is consistent with theoretical values for
𝜙𝑏, calculated to be ~100 meV using a commercial Schrödinger-Poisson solver.24 The exponential nature
of the model in Equation (2) further explains the observation in Fig. 2b, where increasing incident power
increases responsivity, up to a point of saturation. At low incident powers, when 𝜙𝑏 − ∆𝜙𝑏 ≈ 𝜙𝑏, small
changes in ∆𝜙𝑏 lead to small changes in the number of conduction electrons. However, when 𝜙𝑏 − ∆𝜙𝑏
is lowered at high incident powers, the same small change in ∆𝜙𝑏 will lead to an exponentially larger
change in the number of conduction electrons. This continues until reaching a point of saturation where
non-idealities, such as increased recombination in the channel and the AlGaN/GaN interface, lead to a
divergence from this model. This gain mechanism is similar to that of a phototransistor, where minority
carrier accumulation in the base lowers the base-emitter energetic barrier, allowing more majority carriers
to be injected from the emitter.17
5
The band structure of an MSM photodetector, schematically illustrated in Fig. 3c has no barrier to hole
conduction into the metal, in contrast to the 2DEG-IDT device. Thus, in order for spatial hole
accumulation to occur, which is necessary to achieve a gain greater than unity,25 a trap state must exist at
the metal contact. The gain due to such a trap state would be limited by the density of trap states and the
de-trapping time, thus the assumption 𝑛𝑒(𝜙𝑏) ∝ 𝐹𝑝ℎ is unlikely to hold. This explains the fact that gain
in the Pd-MSM photodetector is not linearly proportional to 1 𝐿2⁄ . Though trap states could exist at the
AlGaN/GaN interface, the difference in the scaling of the gain with length in these devices indicates that
trap states do not play the same role in determining the gain of the 2DEG-IDT device as they do in the
Pd-MSM device.
In conclusion, we demonstrated a 2DEG-IDT photodetector with a record high NPDR (6x1014), in
addition to a high responsivity (7,800 A/W) and UV-visible rejection-ratio (106). The observed 32/76 ms
rise/fall times present significant improvements on the 20/60 s rise/fall times seen in a photoconductor
with comparable gain. We argue that the gain mechanism in this device is similar to that of a
phototransistor, where spatial hole accumulation leads to a lowering of the energy barrier for electrons
entering the conduction band. This mechanism is consistent with the scaling of gain with incident power
and device channel length. The simple, two-mask fabrication process further allows for monolithic
integration of our device with AlGaN/GaN HEMTs, enabling on-chip integration of optical sensing
systems using this material platform.
This work was supported by the National Science Foundation (NSF) Engineering Research Center for
Power Optimization of Electro Thermal Systems (POETS) under Grant EEC-1449548. N.A.S and
A.K.M.N. acknowledge the support from the National Science foundation grant ECCS-1708907. The
devices were fabricated in the Stanford Nanofabrication Facility (SNF), which was partly supported by
the NSF as part of the National Nanotechnology Coordinated Infrastructure (NNCI) under award ECCS-
1542152.
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7
TABLE I. Performance of various photodetector architectures demonstrated in GaN
Detector type
(A/W)
Responsivity
MSM
p-i-n diode
Avalanche
Phototransistor
Photoconductor
HEMT
Meander
Sliced-HEMT
2DEG IDT
3.1
0.15
0.13
50,000
13,000
3,000
10,000
33
7,800
NPDR
(1/W)
3x1012
2x109
2x1010
5x1014
4x108
2x106
8x1012
1x1012
6x1014
UV/VIS
Bias Voltage
rejection-ratio
(V)
105
103
104
108
102
103
104
103
106
10
10
20
3
1
10
5
5
5
References
Chang et al.6
Xu et al.7
Tut et al.8
Yang et al.9
Liu et al.10
Khan et al.11
Martens et al.12
Kumar et al.13
This work
FIG. 1. (a) Schematic illustration of material stack.
(b) Optical microscope image of fabricated device.
8
FIG. 2. (a) UV photoresponse of characteristic 2DEG-IDT and MSM devices exposed to 1.5
mW/cm2 UV power. (b) Responsivity as a function of incident power, with the responsivity
corresponding to 100% Q.E. labelled. Measurements below 0.010 mW/cm2 were performed using
Setup II, those above 0.010 mW/cm2 were performed with Setup I. (c) Transient measurement of
2DEG-IDT response to 0.17 mW/cm2 365 nm illumination chopped at 5 Hz, measured in Setup I.
(d) Responsivity vs. wavelength, measured in Setup II. Measurements in (b,c,d) were at a bias
voltage of 5 V.
9
FIG. 3. Comparison of internal gain vs. length for (a) Pd-MSM and (b) 2DEG-IDT photodetectors.
Error bars represent response biasing photodetector at ±5 V. Inserts show microscope images of
fabricated devices with spacing of 4-20 µm, scale bars represent 100 µm. It is observed that there is a
linear proportionality between gain and 1/L2 for the 2DEG-IDT device (black dashed line), but not for
the Pd-MSM device. Band structures for the Pd-MSM and 2DEG-IDT photodetectors under applied
bias are found in (c) and (d) respectively. Dashed lines in GaN conduction band represent electrostatic
barrier lowering due to photon-induced hole accumulation.
10
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