Question: What was the first commercial uses of LEDs?

The first commercial LEDs were commonly used as replacements for incandescent and neon indicator lamps, and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, calculators, as well as watches (see list of signal uses). Until 1968, visible and infrared LEDs were extremely costly, in the order of US$200 per unit, and so had little practical use. The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide (GaAsP) in 1968 to produce red LEDs suitable for indicators. Hewlett Packard (HP) introduced LEDs in 1968, initially using GaAsP supplied by Monsanto. These red LEDs were bright enough only for use as indicators, as the light output was not enough to illuminate an area. Readouts in calculators were so small that plastic lenses were built over each digit to make them legible. Later, other colors became widely available and appeared in appliances and equipment. In the 1970s commercially successful LED devices at less than five cents each were produced by Fairchild Optoelectronics. These devices employed compound semiconductor chips fabricated with the planar process invented by Dr. Jean Hoerni at Fairchild Semiconductor. The combination of planar processing for chip fabrication and innovative packaging methods enabled the team at Fairchild led by optoelectronics pioneer Thomas Brandt to achieve the needed cost reductions. These methods continue to be used by LED producers.

Answer: replacements for incandescent and neon indicator lamps

<hl> The first commercial LEDs were commonly used as replacements for incandescent and neon indicator lamps , and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, calculators, as well as watches (see list of signal uses). <hl> Until 1968, visible and infrared LEDs were extremely costly, in the order of US$200 per unit, and so had little practical use. The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide (GaAsP) in 1968 to produce red LEDs suitable for indicators. Hewlett Packard (HP) introduced LEDs in 1968, initially using GaAsP supplied by Monsanto. These red LEDs were bright enough only for use as indicators, as the light output was not enough to illuminate an area. Readouts in calculators were so small that plastic lenses were built over each digit to make them legible. Later, other colors became widely available and appeared in appliances and equipment. In the 1970s commercially successful LED devices at less than five cents each were produced by Fairchild Optoelectronics. These devices employed compound semiconductor chips fabricated with the planar process invented by Dr. Jean Hoerni at Fairchild Semiconductor. The combination of planar processing for chip fabrication and innovative packaging methods enabled the team at Fairchild led by optoelectronics pioneer Thomas Brandt to achieve the needed cost reductions. These methods continue to be used by LED producers.

The first commercial LEDs were commonly used as <hl> replacements for incandescent and neon indicator lamps <hl>, and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, calculators, as well as watches (see list of signal uses). Until 1968, visible and infrared LEDs were extremely costly, in the order of US$200 per unit, and so had little practical use. The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide (GaAsP) in 1968 to produce red LEDs suitable for indicators. Hewlett Packard (HP) introduced LEDs in 1968, initially using GaAsP supplied by Monsanto. These red LEDs were bright enough only for use as indicators, as the light output was not enough to illuminate an area. Readouts in calculators were so small that plastic lenses were built over each digit to make them legible. Later, other colors became widely available and appeared in appliances and equipment. In the 1970s commercially successful LED devices at less than five cents each were produced by Fairchild Optoelectronics. These devices employed compound semiconductor chips fabricated with the planar process invented by Dr. Jean Hoerni at Fairchild Semiconductor. The combination of planar processing for chip fabrication and innovative packaging methods enabled the team at Fairchild led by optoelectronics pioneer Thomas Brandt to achieve the needed cost reductions. These methods continue to be used by LED producers.

The first commercial LEDs were commonly used as <hl> replacements for incandescent and neon indicator lamps <hl> , and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, calculators, as well as watches (see list of signal uses).


Question: How much did the early LEDs cost?

Answer: US$200 per unit

The first commercial LEDs were commonly used as replacements for incandescent and neon indicator lamps, and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, calculators, as well as watches (see list of signal uses). <hl> Until 1968, visible and infrared LEDs were extremely costly, in the order of US$200 per unit , and so had little practical use. <hl> The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide (GaAsP) in 1968 to produce red LEDs suitable for indicators. Hewlett Packard (HP) introduced LEDs in 1968, initially using GaAsP supplied by Monsanto. These red LEDs were bright enough only for use as indicators, as the light output was not enough to illuminate an area. Readouts in calculators were so small that plastic lenses were built over each digit to make them legible. Later, other colors became widely available and appeared in appliances and equipment. In the 1970s commercially successful LED devices at less than five cents each were produced by Fairchild Optoelectronics. These devices employed compound semiconductor chips fabricated with the planar process invented by Dr. Jean Hoerni at Fairchild Semiconductor. The combination of planar processing for chip fabrication and innovative packaging methods enabled the team at Fairchild led by optoelectronics pioneer Thomas Brandt to achieve the needed cost reductions. These methods continue to be used by LED producers.

The first commercial LEDs were commonly used as replacements for incandescent and neon indicator lamps, and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, calculators, as well as watches (see list of signal uses). Until 1968, visible and infrared LEDs were extremely costly, in the order of <hl> US$200 per unit <hl>, and so had little practical use. The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide (GaAsP) in 1968 to produce red LEDs suitable for indicators. Hewlett Packard (HP) introduced LEDs in 1968, initially using GaAsP supplied by Monsanto. These red LEDs were bright enough only for use as indicators, as the light output was not enough to illuminate an area. Readouts in calculators were so small that plastic lenses were built over each digit to make them legible. Later, other colors became widely available and appeared in appliances and equipment. In the 1970s commercially successful LED devices at less than five cents each were produced by Fairchild Optoelectronics. These devices employed compound semiconductor chips fabricated with the planar process invented by Dr. Jean Hoerni at Fairchild Semiconductor. The combination of planar processing for chip fabrication and innovative packaging methods enabled the team at Fairchild led by optoelectronics pioneer Thomas Brandt to achieve the needed cost reductions. These methods continue to be used by LED producers.

Until 1968, visible and infrared LEDs were extremely costly, in the order of <hl> US$200 per unit <hl> , and so had little practical use.


Question: What was one use of early LED light in products?

Answer: calculators

<hl> The first commercial LEDs were commonly used as replacements for incandescent and neon indicator lamps, and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, calculators , as well as watches (see list of signal uses). <hl> Until 1968, visible and infrared LEDs were extremely costly, in the order of US$200 per unit, and so had little practical use. The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide (GaAsP) in 1968 to produce red LEDs suitable for indicators. Hewlett Packard (HP) introduced LEDs in 1968, initially using GaAsP supplied by Monsanto. These red LEDs were bright enough only for use as indicators, as the light output was not enough to illuminate an area. Readouts in calculators were so small that plastic lenses were built over each digit to make them legible. Later, other colors became widely available and appeared in appliances and equipment. In the 1970s commercially successful LED devices at less than five cents each were produced by Fairchild Optoelectronics. These devices employed compound semiconductor chips fabricated with the planar process invented by Dr. Jean Hoerni at Fairchild Semiconductor. The combination of planar processing for chip fabrication and innovative packaging methods enabled the team at Fairchild led by optoelectronics pioneer Thomas Brandt to achieve the needed cost reductions. These methods continue to be used by LED producers.

The first commercial LEDs were commonly used as replacements for incandescent and neon indicator lamps, and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, <hl> calculators <hl>, as well as watches (see list of signal uses). Until 1968, visible and infrared LEDs were extremely costly, in the order of US$200 per unit, and so had little practical use. The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide (GaAsP) in 1968 to produce red LEDs suitable for indicators. Hewlett Packard (HP) introduced LEDs in 1968, initially using GaAsP supplied by Monsanto. These red LEDs were bright enough only for use as indicators, as the light output was not enough to illuminate an area. Readouts in calculators were so small that plastic lenses were built over each digit to make them legible. Later, other colors became widely available and appeared in appliances and equipment. In the 1970s commercially successful LED devices at less than five cents each were produced by Fairchild Optoelectronics. These devices employed compound semiconductor chips fabricated with the planar process invented by Dr. Jean Hoerni at Fairchild Semiconductor. The combination of planar processing for chip fabrication and innovative packaging methods enabled the team at Fairchild led by optoelectronics pioneer Thomas Brandt to achieve the needed cost reductions. These methods continue to be used by LED producers.

The first commercial LEDs were commonly used as replacements for incandescent and neon indicator lamps, and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, <hl> calculators <hl> , as well as watches (see list of signal uses).


Question: What modern company introduced LEDs in 1968?

Answer: Hewlett Packard (HP)

The first commercial LEDs were commonly used as replacements for incandescent and neon indicator lamps, and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, calculators, as well as watches (see list of signal uses). Until 1968, visible and infrared LEDs were extremely costly, in the order of US$200 per unit, and so had little practical use. The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide (GaAsP) in 1968 to produce red LEDs suitable for indicators. <hl> Hewlett Packard (HP) introduced LEDs in 1968, initially using GaAsP supplied by Monsanto. <hl> These red LEDs were bright enough only for use as indicators, as the light output was not enough to illuminate an area. Readouts in calculators were so small that plastic lenses were built over each digit to make them legible. Later, other colors became widely available and appeared in appliances and equipment. In the 1970s commercially successful LED devices at less than five cents each were produced by Fairchild Optoelectronics. These devices employed compound semiconductor chips fabricated with the planar process invented by Dr. Jean Hoerni at Fairchild Semiconductor. The combination of planar processing for chip fabrication and innovative packaging methods enabled the team at Fairchild led by optoelectronics pioneer Thomas Brandt to achieve the needed cost reductions. These methods continue to be used by LED producers.

The first commercial LEDs were commonly used as replacements for incandescent and neon indicator lamps, and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, calculators, as well as watches (see list of signal uses). Until 1968, visible and infrared LEDs were extremely costly, in the order of US$200 per unit, and so had little practical use. The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide (GaAsP) in 1968 to produce red LEDs suitable for indicators. <hl> Hewlett Packard (HP) <hl> introduced LEDs in 1968, initially using GaAsP supplied by Monsanto. These red LEDs were bright enough only for use as indicators, as the light output was not enough to illuminate an area. Readouts in calculators were so small that plastic lenses were built over each digit to make them legible. Later, other colors became widely available and appeared in appliances and equipment. In the 1970s commercially successful LED devices at less than five cents each were produced by Fairchild Optoelectronics. These devices employed compound semiconductor chips fabricated with the planar process invented by Dr. Jean Hoerni at Fairchild Semiconductor. The combination of planar processing for chip fabrication and innovative packaging methods enabled the team at Fairchild led by optoelectronics pioneer Thomas Brandt to achieve the needed cost reductions. These methods continue to be used by LED producers.


Question: In what decade were production costs greatly reduced for LEDs to enable successful commercial uses?

Answer: 1970s

The first commercial LEDs were commonly used as replacements for incandescent and neon indicator lamps, and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, calculators, as well as watches (see list of signal uses). Until 1968, visible and infrared LEDs were extremely costly, in the order of US$200 per unit, and so had little practical use. The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide (GaAsP) in 1968 to produce red LEDs suitable for indicators. Hewlett Packard (HP) introduced LEDs in 1968, initially using GaAsP supplied by Monsanto. These red LEDs were bright enough only for use as indicators, as the light output was not enough to illuminate an area. Readouts in calculators were so small that plastic lenses were built over each digit to make them legible. Later, other colors became widely available and appeared in appliances and equipment. <hl> In the 1970s commercially successful LED devices at less than five cents each were produced by Fairchild Optoelectronics. <hl> These devices employed compound semiconductor chips fabricated with the planar process invented by Dr. Jean Hoerni at Fairchild Semiconductor. The combination of planar processing for chip fabrication and innovative packaging methods enabled the team at Fairchild led by optoelectronics pioneer Thomas Brandt to achieve the needed cost reductions. These methods continue to be used by LED producers.

The first commercial LEDs were commonly used as replacements for incandescent and neon indicator lamps, and in seven-segment displays, first in expensive equipment such as laboratory and electronics test equipment, then later in such appliances as TVs, radios, telephones, calculators, as well as watches (see list of signal uses). Until 1968, visible and infrared LEDs were extremely costly, in the order of US$200 per unit, and so had little practical use. The Monsanto Company was the first organization to mass-produce visible LEDs, using gallium arsenide phosphide (GaAsP) in 1968 to produce red LEDs suitable for indicators. Hewlett Packard (HP) introduced LEDs in 1968, initially using GaAsP supplied by Monsanto. These red LEDs were bright enough only for use as indicators, as the light output was not enough to illuminate an area. Readouts in calculators were so small that plastic lenses were built over each digit to make them legible. Later, other colors became widely available and appeared in appliances and equipment. In the <hl> 1970s <hl> commercially successful LED devices at less than five cents each were produced by Fairchild Optoelectronics. These devices employed compound semiconductor chips fabricated with the planar process invented by Dr. Jean Hoerni at Fairchild Semiconductor. The combination of planar processing for chip fabrication and innovative packaging methods enabled the team at Fairchild led by optoelectronics pioneer Thomas Brandt to achieve the needed cost reductions. These methods continue to be used by LED producers.


Question: What color LED was demonstrated in 1994?

The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs).

Answer: blue

<hl> The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. <hl> In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs).

The first high-brightness <hl> blue <hl> LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs).


Question: Who demonstrated the first blue LED?

Answer: Shuji Nakamura

<hl> The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. <hl> In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs).

The first high-brightness blue LED was demonstrated by <hl> Shuji Nakamura <hl> of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs).


Question: What did Nakamura, Akasaki, and Amano receive for their work?

Answer: 2014 Nobel prize in physics

The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. <hl> In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. <hl> In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs).

The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the <hl> 2014 Nobel prize in physics <hl> for their work. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs).


Question: Who investigated the efficiency of high-brightness LED at Cardiff University in 1995?

Answer: Alberto Barbieri

The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. <hl> In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs). <hl>

The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. In 1995, <hl> Alberto Barbieri <hl> at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs).


Question: What substance did Barbieri use in his work with high-brightness LED?

Answer: indium tin oxide

The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. <hl> In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs). <hl>

The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using <hl> indium tin oxide <hl> (ITO) on (AlGaInP/GaAs).


Question: What LED quickly followed the blue LEDs?

The attainment of high efficiency in blue LEDs was quickly followed by the development of the first white LED. In this device a Y 3Al 5O 12:Ce (known as "YAG") phosphor coating on the emitter absorbs some of the blue emission and produces yellow light through fluorescence. The combination of that yellow with remaining blue light appears white to the eye. However using different phosphors (fluorescent materials) it also became possible to instead produce green and red light through fluorescence. The resulting mixture of red, green and blue is not only perceived by humans as white light but is superior for illumination in terms of color rendering, whereas one cannot appreciate the color of red or green objects illuminated only by the yellow (and remaining blue) wavelengths from the YAG phosphor.

Answer: white

<hl> The attainment of high efficiency in blue LEDs was quickly followed by the development of the first white LED. <hl> In this device a Y 3Al 5O 12:Ce (known as "YAG") phosphor coating on the emitter absorbs some of the blue emission and produces yellow light through fluorescence. The combination of that yellow with remaining blue light appears white to the eye. However using different phosphors (fluorescent materials) it also became possible to instead produce green and red light through fluorescence. The resulting mixture of red, green and blue is not only perceived by humans as white light but is superior for illumination in terms of color rendering, whereas one cannot appreciate the color of red or green objects illuminated only by the yellow (and remaining blue) wavelengths from the YAG phosphor.

The attainment of high efficiency in blue LEDs was quickly followed by the development of the first <hl> white <hl> LED. In this device a Y 3Al 5O 12:Ce (known as "YAG") phosphor coating on the emitter absorbs some of the blue emission and produces yellow light through fluorescence. The combination of that yellow with remaining blue light appears white to the eye. However using different phosphors (fluorescent materials) it also became possible to instead produce green and red light through fluorescence. The resulting mixture of red, green and blue is not only perceived by humans as white light but is superior for illumination in terms of color rendering, whereas one cannot appreciate the color of red or green objects illuminated only by the yellow (and remaining blue) wavelengths from the YAG phosphor.


Question: What does the YAG phosphor coating produce?

Answer: yellow light

The attainment of high efficiency in blue LEDs was quickly followed by the development of the first white LED. <hl> In this device a Y 3Al 5O 12:Ce (known as "YAG") phosphor coating on the emitter absorbs some of the blue emission and produces yellow light through fluorescence. <hl> The combination of that yellow with remaining blue light appears white to the eye. However using different phosphors (fluorescent materials) it also became possible to instead produce green and red light through fluorescence. The resulting mixture of red, green and blue is not only perceived by humans as white light but is superior for illumination in terms of color rendering, whereas one cannot appreciate the color of red or green objects illuminated only by the yellow (and remaining blue) wavelengths from the YAG phosphor.

The attainment of high efficiency in blue LEDs was quickly followed by the development of the first white LED. In this device a Y 3Al 5O 12:Ce (known as "YAG") phosphor coating on the emitter absorbs some of the blue emission and produces <hl> yellow light <hl> through fluorescence. The combination of that yellow with remaining blue light appears white to the eye. However using different phosphors (fluorescent materials) it also became possible to instead produce green and red light through fluorescence. The resulting mixture of red, green and blue is not only perceived by humans as white light but is superior for illumination in terms of color rendering, whereas one cannot appreciate the color of red or green objects illuminated only by the yellow (and remaining blue) wavelengths from the YAG phosphor.


Question: What converts absorbed light energy into an electric current?

A P-N junction can convert absorbed light energy into a proportional electric current. The same process is reversed here (i.e. the P-N junction emits light when electrical energy is applied to it). This phenomenon is generally called electroluminescence, which can be defined as the emission of light from a semi-conductor under the influence of an electric field. The charge carriers recombine in a forward-biased P-N junction as the electrons cross from the N-region and recombine with the holes existing in the P-region. Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes will be lesser than the energy levels of the electrons. Some portion of the energy must be dissipated in order to recombine the electrons and the holes. This energy is emitted in the form of heat and light.

Answer: P-N junction

<hl> A P-N junction can convert absorbed light energy into a proportional electric current. <hl> The same process is reversed here (i.e. the P-N junction emits light when electrical energy is applied to it). This phenomenon is generally called electroluminescence, which can be defined as the emission of light from a semi-conductor under the influence of an electric field. The charge carriers recombine in a forward-biased P-N junction as the electrons cross from the N-region and recombine with the holes existing in the P-region. Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes will be lesser than the energy levels of the electrons. Some portion of the energy must be dissipated in order to recombine the electrons and the holes. This energy is emitted in the form of heat and light.

A <hl> P-N junction <hl> can convert absorbed light energy into a proportional electric current. The same process is reversed here (i.e. the P-N junction emits light when electrical energy is applied to it). This phenomenon is generally called electroluminescence, which can be defined as the emission of light from a semi-conductor under the influence of an electric field. The charge carriers recombine in a forward-biased P-N junction as the electrons cross from the N-region and recombine with the holes existing in the P-region. Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes will be lesser than the energy levels of the electrons. Some portion of the energy must be dissipated in order to recombine the electrons and the holes. This energy is emitted in the form of heat and light.


Question: What is the phenomenon where a P-N junction emits light when an electrical current is applied to it?

Answer: electroluminescence

A P-N junction can convert absorbed light energy into a proportional electric current. The same process is reversed here (i.e. the P-N junction emits light when electrical energy is applied to it). <hl> This phenomenon is generally called electroluminescence , which can be defined as the emission of light from a semi-conductor under the influence of an electric field. <hl> The charge carriers recombine in a forward-biased P-N junction as the electrons cross from the N-region and recombine with the holes existing in the P-region. Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes will be lesser than the energy levels of the electrons. Some portion of the energy must be dissipated in order to recombine the electrons and the holes. This energy is emitted in the form of heat and light.

A P-N junction can convert absorbed light energy into a proportional electric current. The same process is reversed here (i.e. the P-N junction emits light when electrical energy is applied to it). This phenomenon is generally called <hl> electroluminescence <hl>, which can be defined as the emission of light from a semi-conductor under the influence of an electric field. The charge carriers recombine in a forward-biased P-N junction as the electrons cross from the N-region and recombine with the holes existing in the P-region. Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes will be lesser than the energy levels of the electrons. Some portion of the energy must be dissipated in order to recombine the electrons and the holes. This energy is emitted in the form of heat and light.

This phenomenon is generally called <hl> electroluminescence <hl> , which can be defined as the emission of light from a semi-conductor under the influence of an electric field.


Question: Where are the free electrons located in the production of electroluminescence?

Answer: the conduction band

A P-N junction can convert absorbed light energy into a proportional electric current. The same process is reversed here (i.e. the P-N junction emits light when electrical energy is applied to it). This phenomenon is generally called electroluminescence, which can be defined as the emission of light from a semi-conductor under the influence of an electric field. The charge carriers recombine in a forward-biased P-N junction as the electrons cross from the N-region and recombine with the holes existing in the P-region. <hl> Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. <hl> Thus the energy level of the holes will be lesser than the energy levels of the electrons. Some portion of the energy must be dissipated in order to recombine the electrons and the holes. This energy is emitted in the form of heat and light.

A P-N junction can convert absorbed light energy into a proportional electric current. The same process is reversed here (i.e. the P-N junction emits light when electrical energy is applied to it). This phenomenon is generally called electroluminescence, which can be defined as the emission of light from a semi-conductor under the influence of an electric field. The charge carriers recombine in a forward-biased P-N junction as the electrons cross from the N-region and recombine with the holes existing in the P-region. Free electrons are in <hl> the conduction band <hl> of energy levels, while holes are in the valence energy band. Thus the energy level of the holes will be lesser than the energy levels of the electrons. Some portion of the energy must be dissipated in order to recombine the electrons and the holes. This energy is emitted in the form of heat and light.


Question: Whose energy levels are lower than the electrons in the electroluminescence process?

Answer: holes existing in the P-region

A P-N junction can convert absorbed light energy into a proportional electric current. The same process is reversed here (i.e. the P-N junction emits light when electrical energy is applied to it). This phenomenon is generally called electroluminescence, which can be defined as the emission of light from a semi-conductor under the influence of an electric field. <hl> The charge carriers recombine in a forward-biased P-N junction as the electrons cross from the N-region and recombine with the holes existing in the P-region . <hl> Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes will be lesser than the energy levels of the electrons. Some portion of the energy must be dissipated in order to recombine the electrons and the holes. This energy is emitted in the form of heat and light.

A P-N junction can convert absorbed light energy into a proportional electric current. The same process is reversed here (i.e. the P-N junction emits light when electrical energy is applied to it). This phenomenon is generally called electroluminescence, which can be defined as the emission of light from a semi-conductor under the influence of an electric field. The charge carriers recombine in a forward-biased P-N junction as the electrons cross from the N-region and recombine with the <hl> holes existing in the P-region <hl>. Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes will be lesser than the energy levels of the electrons. Some portion of the energy must be dissipated in order to recombine the electrons and the holes. This energy is emitted in the form of heat and light.

The charge carriers recombine in a forward-biased P-N junction as the electrons cross from the N-region and recombine with the <hl> holes existing in the P-region <hl> .


Question: Why is some energy in the electroluminescence process emitted as heat and light?

Answer: to recombine the electrons and the holes

A P-N junction can convert absorbed light energy into a proportional electric current. The same process is reversed here (i.e. the P-N junction emits light when electrical energy is applied to it). This phenomenon is generally called electroluminescence, which can be defined as the emission of light from a semi-conductor under the influence of an electric field. The charge carriers recombine in a forward-biased P-N junction as the electrons cross from the N-region and recombine with the holes existing in the P-region. Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes will be lesser than the energy levels of the electrons. <hl> Some portion of the energy must be dissipated in order to recombine the electrons and the holes . <hl> This energy is emitted in the form of heat and light.

A P-N junction can convert absorbed light energy into a proportional electric current. The same process is reversed here (i.e. the P-N junction emits light when electrical energy is applied to it). This phenomenon is generally called electroluminescence, which can be defined as the emission of light from a semi-conductor under the influence of an electric field. The charge carriers recombine in a forward-biased P-N junction as the electrons cross from the N-region and recombine with the holes existing in the P-region. Free electrons are in the conduction band of energy levels, while holes are in the valence energy band. Thus the energy level of the holes will be lesser than the energy levels of the electrons. Some portion of the energy must be dissipated in order <hl> to recombine the electrons and the holes <hl>. This energy is emitted in the form of heat and light.

Some portion of the energy must be dissipated in order <hl> to recombine the electrons and the holes <hl> .


Question: In what year was a new type of blue LED produced?

In September 2003, a new type of blue LED was demonstrated by Cree that consumes 24 mW at 20 milliamperes (mA). This produced a commercially packaged white light giving 65 lm/W at 20 mA, becoming the brightest white LED commercially available at the time, and more than four times as efficient as standard incandescents. In 2006, they demonstrated a prototype with a record white LED luminous efficacy of 131 lm/W at 20 mA. Nichia Corporation has developed a white LED with luminous efficacy of 150 lm/W at a forward current of 20 mA. Cree's XLamp XM-L LEDs, commercially available in 2011, produce 100 lm/W at their full power of 10 W, and up to 160 lm/W at around 2 W input power. In 2012, Cree announced a white LED giving 254 lm/W, and 303 lm/W in March 2014. Practical general lighting needs high-power LEDs, of one watt or more. Typical operating currents for such devices begin at 350 mA.

Answer: 2003

<hl> In September 2003 , a new type of blue LED was demonstrated by Cree that consumes 24 mW at 20 milliamperes (mA). <hl> This produced a commercially packaged white light giving 65 lm/W at 20 mA, becoming the brightest white LED commercially available at the time, and more than four times as efficient as standard incandescents. In 2006, they demonstrated a prototype with a record white LED luminous efficacy of 131 lm/W at 20 mA. Nichia Corporation has developed a white LED with luminous efficacy of 150 lm/W at a forward current of 20 mA. Cree's XLamp XM-L LEDs, commercially available in 2011, produce 100 lm/W at their full power of 10 W, and up to 160 lm/W at around 2 W input power. In 2012, Cree announced a white LED giving 254 lm/W, and 303 lm/W in March 2014. Practical general lighting needs high-power LEDs, of one watt or more. Typical operating currents for such devices begin at 350 mA.

In September <hl> 2003 <hl>, a new type of blue LED was demonstrated by Cree that consumes 24 mW at 20 milliamperes (mA). This produced a commercially packaged white light giving 65 lm/W at 20 mA, becoming the brightest white LED commercially available at the time, and more than four times as efficient as standard incandescents. In 2006, they demonstrated a prototype with a record white LED luminous efficacy of 131 lm/W at 20 mA. Nichia Corporation has developed a white LED with luminous efficacy of 150 lm/W at a forward current of 20 mA. Cree's XLamp XM-L LEDs, commercially available in 2011, produce 100 lm/W at their full power of 10 W, and up to 160 lm/W at around 2 W input power. In 2012, Cree announced a white LED giving 254 lm/W, and 303 lm/W in March 2014. Practical general lighting needs high-power LEDs, of one watt or more. Typical operating currents for such devices begin at 350 mA.

In September <hl> 2003 <hl> , a new type of blue LED was demonstrated by Cree that consumes 24 mW at 20 milliamperes (mA).


Question: Who demonstrated in 2003 the new type of blue LED?

Answer: Cree

<hl> In September 2003, a new type of blue LED was demonstrated by Cree that consumes 24 mW at 20 milliamperes (mA). <hl> This produced a commercially packaged white light giving 65 lm/W at 20 mA, becoming the brightest white LED commercially available at the time, and more than four times as efficient as standard incandescents. In 2006, they demonstrated a prototype with a record white LED luminous efficacy of 131 lm/W at 20 mA. Nichia Corporation has developed a white LED with luminous efficacy of 150 lm/W at a forward current of 20 mA. Cree's XLamp XM-L LEDs, commercially available in 2011, produce 100 lm/W at their full power of 10 W, and up to 160 lm/W at around 2 W input power. In 2012, Cree announced a white LED giving 254 lm/W, and 303 lm/W in March 2014. Practical general lighting needs high-power LEDs, of one watt or more. Typical operating currents for such devices begin at 350 mA.

In September 2003, a new type of blue LED was demonstrated by <hl> Cree <hl> that consumes 24 mW at 20 milliamperes (mA). This produced a commercially packaged white light giving 65 lm/W at 20 mA, becoming the brightest white LED commercially available at the time, and more than four times as efficient as standard incandescents. In 2006, they demonstrated a prototype with a record white LED luminous efficacy of 131 lm/W at 20 mA. Nichia Corporation has developed a white LED with luminous efficacy of 150 lm/W at a forward current of 20 mA. Cree's XLamp XM-L LEDs, commercially available in 2011, produce 100 lm/W at their full power of 10 W, and up to 160 lm/W at around 2 W input power. In 2012, Cree announced a white LED giving 254 lm/W, and 303 lm/W in March 2014. Practical general lighting needs high-power LEDs, of one watt or more. Typical operating currents for such devices begin at 350 mA.


Question: How much more efficient as standard incandescents was the white LED commercially available in 2003?

Answer: four times

In September 2003, a new type of blue LED was demonstrated by Cree that consumes 24 mW at 20 milliamperes (mA). <hl> This produced a commercially packaged white light giving 65 lm/W at 20 mA, becoming the brightest white LED commercially available at the time, and more than four times as efficient as standard incandescents. <hl> In 2006, they demonstrated a prototype with a record white LED luminous efficacy of 131 lm/W at 20 mA. Nichia Corporation has developed a white LED with luminous efficacy of 150 lm/W at a forward current of 20 mA. Cree's XLamp XM-L LEDs, commercially available in 2011, produce 100 lm/W at their full power of 10 W, and up to 160 lm/W at around 2 W input power. In 2012, Cree announced a white LED giving 254 lm/W, and 303 lm/W in March 2014. Practical general lighting needs high-power LEDs, of one watt or more. Typical operating currents for such devices begin at 350 mA.

In September 2003, a new type of blue LED was demonstrated by Cree that consumes 24 mW at 20 milliamperes (mA). This produced a commercially packaged white light giving 65 lm/W at 20 mA, becoming the brightest white LED commercially available at the time, and more than <hl> four times <hl> as efficient as standard incandescents. In 2006, they demonstrated a prototype with a record white LED luminous efficacy of 131 lm/W at 20 mA. Nichia Corporation has developed a white LED with luminous efficacy of 150 lm/W at a forward current of 20 mA. Cree's XLamp XM-L LEDs, commercially available in 2011, produce 100 lm/W at their full power of 10 W, and up to 160 lm/W at around 2 W input power. In 2012, Cree announced a white LED giving 254 lm/W, and 303 lm/W in March 2014. Practical general lighting needs high-power LEDs, of one watt or more. Typical operating currents for such devices begin at 350 mA.


Question: What is the typical operating current for high-power LEDs?

Answer: 350 mA

In September 2003, a new type of blue LED was demonstrated by Cree that consumes 24 mW at 20 milliamperes (mA). This produced a commercially packaged white light giving 65 lm/W at 20 mA, becoming the brightest white LED commercially available at the time, and more than four times as efficient as standard incandescents. In 2006, they demonstrated a prototype with a record white LED luminous efficacy of 131 lm/W at 20 mA. Nichia Corporation has developed a white LED with luminous efficacy of 150 lm/W at a forward current of 20 mA. Cree's XLamp XM-L LEDs, commercially available in 2011, produce 100 lm/W at their full power of 10 W, and up to 160 lm/W at around 2 W input power. In 2012, Cree announced a white LED giving 254 lm/W, and 303 lm/W in March 2014. Practical general lighting needs high-power LEDs, of one watt or more. <hl> Typical operating currents for such devices begin at 350 mA . <hl>

In September 2003, a new type of blue LED was demonstrated by Cree that consumes 24 mW at 20 milliamperes (mA). This produced a commercially packaged white light giving 65 lm/W at 20 mA, becoming the brightest white LED commercially available at the time, and more than four times as efficient as standard incandescents. In 2006, they demonstrated a prototype with a record white LED luminous efficacy of 131 lm/W at 20 mA. Nichia Corporation has developed a white LED with luminous efficacy of 150 lm/W at a forward current of 20 mA. Cree's XLamp XM-L LEDs, commercially available in 2011, produce 100 lm/W at their full power of 10 W, and up to 160 lm/W at around 2 W input power. In 2012, Cree announced a white LED giving 254 lm/W, and 303 lm/W in March 2014. Practical general lighting needs high-power LEDs, of one watt or more. Typical operating currents for such devices begin at <hl> 350 mA <hl>.

Typical operating currents for such devices begin at <hl> 350 mA <hl> .


Question: What is a symptom of LED failure?

The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and loss of efficiency. Sudden failures, although rare, can also occur. Early red LEDs were notable for their short service life. With the development of high-power LEDs the devices are subjected to higher junction temperatures and higher current densities than traditional devices. This causes stress on the material and may cause early light-output degradation. To quantitatively classify useful lifetime in a standardized manner it has been suggested to use L70 or L50, which are the runtimes (typically given in thousands of hours) at which a given LED reaches 70% and 50% of initial light output, respectively.

Answer: loss of efficiency

<hl> The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and loss of efficiency . <hl> Sudden failures, although rare, can also occur. Early red LEDs were notable for their short service life. With the development of high-power LEDs the devices are subjected to higher junction temperatures and higher current densities than traditional devices. This causes stress on the material and may cause early light-output degradation. To quantitatively classify useful lifetime in a standardized manner it has been suggested to use L70 or L50, which are the runtimes (typically given in thousands of hours) at which a given LED reaches 70% and 50% of initial light output, respectively.

The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and <hl> loss of efficiency <hl>. Sudden failures, although rare, can also occur. Early red LEDs were notable for their short service life. With the development of high-power LEDs the devices are subjected to higher junction temperatures and higher current densities than traditional devices. This causes stress on the material and may cause early light-output degradation. To quantitatively classify useful lifetime in a standardized manner it has been suggested to use L70 or L50, which are the runtimes (typically given in thousands of hours) at which a given LED reaches 70% and 50% of initial light output, respectively.

The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and <hl> loss of efficiency <hl> .


Question: What is rare in LED lighting?

Answer: Sudden failures

The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and loss of efficiency. <hl> Sudden failures , although rare, can also occur. <hl> Early red LEDs were notable for their short service life. With the development of high-power LEDs the devices are subjected to higher junction temperatures and higher current densities than traditional devices. This causes stress on the material and may cause early light-output degradation. To quantitatively classify useful lifetime in a standardized manner it has been suggested to use L70 or L50, which are the runtimes (typically given in thousands of hours) at which a given LED reaches 70% and 50% of initial light output, respectively.

The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and loss of efficiency. <hl> Sudden failures <hl>, although rare, can also occur. Early red LEDs were notable for their short service life. With the development of high-power LEDs the devices are subjected to higher junction temperatures and higher current densities than traditional devices. This causes stress on the material and may cause early light-output degradation. To quantitatively classify useful lifetime in a standardized manner it has been suggested to use L70 or L50, which are the runtimes (typically given in thousands of hours) at which a given LED reaches 70% and 50% of initial light output, respectively.

<hl> Sudden failures <hl> , although rare, can also occur.


Question: What was notable in early red LEDs?

Answer: their short service life

The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and loss of efficiency. Sudden failures, although rare, can also occur. <hl> Early red LEDs were notable for their short service life . <hl> With the development of high-power LEDs the devices are subjected to higher junction temperatures and higher current densities than traditional devices. This causes stress on the material and may cause early light-output degradation. To quantitatively classify useful lifetime in a standardized manner it has been suggested to use L70 or L50, which are the runtimes (typically given in thousands of hours) at which a given LED reaches 70% and 50% of initial light output, respectively.

The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and loss of efficiency. Sudden failures, although rare, can also occur. Early red LEDs were notable for <hl> their short service life <hl>. With the development of high-power LEDs the devices are subjected to higher junction temperatures and higher current densities than traditional devices. This causes stress on the material and may cause early light-output degradation. To quantitatively classify useful lifetime in a standardized manner it has been suggested to use L70 or L50, which are the runtimes (typically given in thousands of hours) at which a given LED reaches 70% and 50% of initial light output, respectively.

Early red LEDs were notable for <hl> their short service life <hl> .


Question: What could cause early light-output degradation in LEDs?

Answer: higher junction temperatures

The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and loss of efficiency. Sudden failures, although rare, can also occur. Early red LEDs were notable for their short service life. <hl> With the development of high-power LEDs the devices are subjected to higher junction temperatures and higher current densities than traditional devices. <hl> This causes stress on the material and may cause early light-output degradation. To quantitatively classify useful lifetime in a standardized manner it has been suggested to use L70 or L50, which are the runtimes (typically given in thousands of hours) at which a given LED reaches 70% and 50% of initial light output, respectively.

The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and loss of efficiency. Sudden failures, although rare, can also occur. Early red LEDs were notable for their short service life. With the development of high-power LEDs the devices are subjected to <hl> higher junction temperatures <hl> and higher current densities than traditional devices. This causes stress on the material and may cause early light-output degradation. To quantitatively classify useful lifetime in a standardized manner it has been suggested to use L70 or L50, which are the runtimes (typically given in thousands of hours) at which a given LED reaches 70% and 50% of initial light output, respectively.


Question: What is a classification used in LED lighting to describe how much usefulness it will receive?

Answer: L70 or L50

The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and loss of efficiency. Sudden failures, although rare, can also occur. Early red LEDs were notable for their short service life. With the development of high-power LEDs the devices are subjected to higher junction temperatures and higher current densities than traditional devices. This causes stress on the material and may cause early light-output degradation. <hl> To quantitatively classify useful lifetime in a standardized manner it has been suggested to use L70 or L50 , which are the runtimes (typically given in thousands of hours) at which a given LED reaches 70% and 50% of initial light output, respectively. <hl>

The most common symptom of LED (and diode laser) failure is the gradual lowering of light output and loss of efficiency. Sudden failures, although rare, can also occur. Early red LEDs were notable for their short service life. With the development of high-power LEDs the devices are subjected to higher junction temperatures and higher current densities than traditional devices. This causes stress on the material and may cause early light-output degradation. To quantitatively classify useful lifetime in a standardized manner it has been suggested to use <hl> L70 or L50 <hl>, which are the runtimes (typically given in thousands of hours) at which a given LED reaches 70% and 50% of initial light output, respectively.

To quantitatively classify useful lifetime in a standardized manner it has been suggested to use <hl> L70 or L50 <hl> , which are the runtimes (typically given in thousands of hours) at which a given LED reaches 70% and 50% of initial light output, respectively.


Question: LED efficacy is inversely proportional to what?

Since LED efficacy is inversely proportional to operating temperature, LED technology is well suited for supermarket freezer lighting. Because LEDs produce less waste heat than incandescent lamps, their use in freezers can save on refrigeration costs as well. However, they may be more susceptible to frost and snow buildup than incandescent lamps, so some LED lighting systems have been designed with an added heating circuit. Additionally, research has developed heat sink technologies that will transfer heat produced within the junction to appropriate areas of the light fixture.

Answer: operating temperature

<hl> Since LED efficacy is inversely proportional to operating temperature , LED technology is well suited for supermarket freezer lighting. <hl> Because LEDs produce less waste heat than incandescent lamps, their use in freezers can save on refrigeration costs as well. However, they may be more susceptible to frost and snow buildup than incandescent lamps, so some LED lighting systems have been designed with an added heating circuit. Additionally, research has developed heat sink technologies that will transfer heat produced within the junction to appropriate areas of the light fixture.

Since LED efficacy is inversely proportional to <hl> operating temperature <hl>, LED technology is well suited for supermarket freezer lighting. Because LEDs produce less waste heat than incandescent lamps, their use in freezers can save on refrigeration costs as well. However, they may be more susceptible to frost and snow buildup than incandescent lamps, so some LED lighting systems have been designed with an added heating circuit. Additionally, research has developed heat sink technologies that will transfer heat produced within the junction to appropriate areas of the light fixture.

Since LED efficacy is inversely proportional to <hl> operating temperature <hl> , LED technology is well suited for supermarket freezer lighting.


Question: Where is LED lighting very well suited?

Answer: supermarket freezer

<hl> Since LED efficacy is inversely proportional to operating temperature, LED technology is well suited for supermarket freezer lighting. <hl> Because LEDs produce less waste heat than incandescent lamps, their use in freezers can save on refrigeration costs as well. However, they may be more susceptible to frost and snow buildup than incandescent lamps, so some LED lighting systems have been designed with an added heating circuit. Additionally, research has developed heat sink technologies that will transfer heat produced within the junction to appropriate areas of the light fixture.

Since LED efficacy is inversely proportional to operating temperature, LED technology is well suited for <hl> supermarket freezer <hl> lighting. Because LEDs produce less waste heat than incandescent lamps, their use in freezers can save on refrigeration costs as well. However, they may be more susceptible to frost and snow buildup than incandescent lamps, so some LED lighting systems have been designed with an added heating circuit. Additionally, research has developed heat sink technologies that will transfer heat produced within the junction to appropriate areas of the light fixture.


Question: LEDs produce less waste heat than what other device?

Answer: incandescent lamps

Since LED efficacy is inversely proportional to operating temperature, LED technology is well suited for supermarket freezer lighting. <hl> Because LEDs produce less waste heat than incandescent lamps , their use in freezers can save on refrigeration costs as well. <hl> However, they may be more susceptible to frost and snow buildup than incandescent lamps, so some LED lighting systems have been designed with an added heating circuit. Additionally, research has developed heat sink technologies that will transfer heat produced within the junction to appropriate areas of the light fixture.

Since LED efficacy is inversely proportional to operating temperature, LED technology is well suited for supermarket freezer lighting. Because LEDs produce less waste heat than <hl> incandescent lamps <hl>, their use in freezers can save on refrigeration costs as well. However, they may be more susceptible to frost and snow buildup than incandescent lamps, so some LED lighting systems have been designed with an added heating circuit. Additionally, research has developed heat sink technologies that will transfer heat produced within the junction to appropriate areas of the light fixture.

Because LEDs produce less waste heat than <hl> incandescent lamps <hl> , their use in freezers can save on refrigeration costs as well.


Question: What is LED lighting more susceptible to than incandescent light?

Answer: frost

Since LED efficacy is inversely proportional to operating temperature, LED technology is well suited for supermarket freezer lighting. Because LEDs produce less waste heat than incandescent lamps, their use in freezers can save on refrigeration costs as well. <hl> However, they may be more susceptible to frost and snow buildup than incandescent lamps, so some LED lighting systems have been designed with an added heating circuit. <hl> Additionally, research has developed heat sink technologies that will transfer heat produced within the junction to appropriate areas of the light fixture.

Since LED efficacy is inversely proportional to operating temperature, LED technology is well suited for supermarket freezer lighting. Because LEDs produce less waste heat than incandescent lamps, their use in freezers can save on refrigeration costs as well. However, they may be more susceptible to <hl> frost <hl> and snow buildup than incandescent lamps, so some LED lighting systems have been designed with an added heating circuit. Additionally, research has developed heat sink technologies that will transfer heat produced within the junction to appropriate areas of the light fixture.


Question: What students developed the first blue-violet LED?

The first blue-violet LED using magnesium-doped gallium nitride was made at Stanford University in 1972 by Herb Maruska and Wally Rhines, doctoral students in materials science and engineering. At the time Maruska was on leave from RCA Laboratories, where he collaborated with Jacques Pankove on related work. In 1971, the year after Maruska left for Stanford, his RCA colleagues Pankove and Ed Miller demonstrated the first blue electroluminescence from zinc-doped gallium nitride, though the subsequent device Pankove and Miller built, the first actual gallium nitride light-emitting diode, emitted green light. In 1974 the U.S. Patent Office awarded Maruska, Rhines and Stanford professor David Stevenson a patent for their work in 1972 (U.S. Patent US3819974 A) and today magnesium-doping of gallium nitride continues to be the basis for all commercial blue LEDs and laser diodes. These devices built in the early 1970s had too little light output to be of practical use and research into gallium nitride devices slowed. In August 1989, Cree introduced the first commercially available blue LED based on the indirect bandgap semiconductor, silicon carbide (SiC). SiC LEDs had very low efficiency, no more than about 0.03%, but did emit in the blue portion of the visible light spectrum.[citation needed]

Answer: Herb Maruska and Wally Rhines

<hl> The first blue-violet LED using magnesium-doped gallium nitride was made at Stanford University in 1972 by Herb Maruska and Wally Rhines , doctoral students in materials science and engineering. <hl> At the time Maruska was on leave from RCA Laboratories, where he collaborated with Jacques Pankove on related work. In 1971, the year after Maruska left for Stanford, his RCA colleagues Pankove and Ed Miller demonstrated the first blue electroluminescence from zinc-doped gallium nitride, though the subsequent device Pankove and Miller built, the first actual gallium nitride light-emitting diode, emitted green light. In 1974 the U.S. Patent Office awarded Maruska, Rhines and Stanford professor David Stevenson a patent for their work in 1972 (U.S. Patent US3819974 A) and today magnesium-doping of gallium nitride continues to be the basis for all commercial blue LEDs and laser diodes. These devices built in the early 1970s had too little light output to be of practical use and research into gallium nitride devices slowed. In August 1989, Cree introduced the first commercially available blue LED based on the indirect bandgap semiconductor, silicon carbide (SiC). SiC LEDs had very low efficiency, no more than about 0.03%, but did emit in the blue portion of the visible light spectrum.[citation needed]

The first blue-violet LED using magnesium-doped gallium nitride was made at Stanford University in 1972 by <hl> Herb Maruska and Wally Rhines <hl>, doctoral students in materials science and engineering. At the time Maruska was on leave from RCA Laboratories, where he collaborated with Jacques Pankove on related work. In 1971, the year after Maruska left for Stanford, his RCA colleagues Pankove and Ed Miller demonstrated the first blue electroluminescence from zinc-doped gallium nitride, though the subsequent device Pankove and Miller built, the first actual gallium nitride light-emitting diode, emitted green light. In 1974 the U.S. Patent Office awarded Maruska, Rhines and Stanford professor David Stevenson a patent for their work in 1972 (U.S. Patent US3819974 A) and today magnesium-doping of gallium nitride continues to be the basis for all commercial blue LEDs and laser diodes. These devices built in the early 1970s had too little light output to be of practical use and research into gallium nitride devices slowed. In August 1989, Cree introduced the first commercially available blue LED based on the indirect bandgap semiconductor, silicon carbide (SiC). SiC LEDs had very low efficiency, no more than about 0.03%, but did emit in the blue portion of the visible light spectrum.[citation needed]

The first blue-violet LED using magnesium-doped gallium nitride was made at Stanford University in 1972 by <hl> Herb Maruska and Wally Rhines <hl> , doctoral students in materials science and engineering.


Question: The first blue-violet LED was developed at what University?

Answer: Stanford

<hl> The first blue-violet LED using magnesium-doped gallium nitride was made at Stanford University in 1972 by Herb Maruska and Wally Rhines, doctoral students in materials science and engineering. <hl> At the time Maruska was on leave from RCA Laboratories, where he collaborated with Jacques Pankove on related work. In 1971, the year after Maruska left for Stanford, his RCA colleagues Pankove and Ed Miller demonstrated the first blue electroluminescence from zinc-doped gallium nitride, though the subsequent device Pankove and Miller built, the first actual gallium nitride light-emitting diode, emitted green light. In 1974 the U.S. Patent Office awarded Maruska, Rhines and Stanford professor David Stevenson a patent for their work in 1972 (U.S. Patent US3819974 A) and today magnesium-doping of gallium nitride continues to be the basis for all commercial blue LEDs and laser diodes. These devices built in the early 1970s had too little light output to be of practical use and research into gallium nitride devices slowed. In August 1989, Cree introduced the first commercially available blue LED based on the indirect bandgap semiconductor, silicon carbide (SiC). SiC LEDs had very low efficiency, no more than about 0.03%, but did emit in the blue portion of the visible light spectrum.[citation needed]

The first blue-violet LED using magnesium-doped gallium nitride was made at <hl> Stanford <hl> University in 1972 by Herb Maruska and Wally Rhines, doctoral students in materials science and engineering. At the time Maruska was on leave from RCA Laboratories, where he collaborated with Jacques Pankove on related work. In 1971, the year after Maruska left for Stanford, his RCA colleagues Pankove and Ed Miller demonstrated the first blue electroluminescence from zinc-doped gallium nitride, though the subsequent device Pankove and Miller built, the first actual gallium nitride light-emitting diode, emitted green light. In 1974 the U.S. Patent Office awarded Maruska, Rhines and Stanford professor David Stevenson a patent for their work in 1972 (U.S. Patent US3819974 A) and today magnesium-doping of gallium nitride continues to be the basis for all commercial blue LEDs and laser diodes. These devices built in the early 1970s had too little light output to be of practical use and research into gallium nitride devices slowed. In August 1989, Cree introduced the first commercially available blue LED based on the indirect bandgap semiconductor, silicon carbide (SiC). SiC LEDs had very low efficiency, no more than about 0.03%, but did emit in the blue portion of the visible light spectrum.[citation needed]


Question: When was the first blue-violet LED developed?

Answer: 1972

<hl> The first blue-violet LED using magnesium-doped gallium nitride was made at Stanford University in 1972 by Herb Maruska and Wally Rhines, doctoral students in materials science and engineering. <hl> At the time Maruska was on leave from RCA Laboratories, where he collaborated with Jacques Pankove on related work. In 1971, the year after Maruska left for Stanford, his RCA colleagues Pankove and Ed Miller demonstrated the first blue electroluminescence from zinc-doped gallium nitride, though the subsequent device Pankove and Miller built, the first actual gallium nitride light-emitting diode, emitted green light. In 1974 the U.S. Patent Office awarded Maruska, Rhines and Stanford professor David Stevenson a patent for their work in 1972 (U.S. Patent US3819974 A) and today magnesium-doping of gallium nitride continues to be the basis for all commercial blue LEDs and laser diodes. These devices built in the early 1970s had too little light output to be of practical use and research into gallium nitride devices slowed. In August 1989, Cree introduced the first commercially available blue LED based on the indirect bandgap semiconductor, silicon carbide (SiC). SiC LEDs had very low efficiency, no more than about 0.03%, but did emit in the blue portion of the visible light spectrum.[citation needed]

The first blue-violet LED using magnesium-doped gallium nitride was made at Stanford University in <hl> 1972 <hl> by Herb Maruska and Wally Rhines, doctoral students in materials science and engineering. At the time Maruska was on leave from RCA Laboratories, where he collaborated with Jacques Pankove on related work. In 1971, the year after Maruska left for Stanford, his RCA colleagues Pankove and Ed Miller demonstrated the first blue electroluminescence from zinc-doped gallium nitride, though the subsequent device Pankove and Miller built, the first actual gallium nitride light-emitting diode, emitted green light. In 1974 the U.S. Patent Office awarded Maruska, Rhines and Stanford professor David Stevenson a patent for their work in 1972 (U.S. Patent US3819974 A) and today magnesium-doping of gallium nitride continues to be the basis for all commercial blue LEDs and laser diodes. These devices built in the early 1970s had too little light output to be of practical use and research into gallium nitride devices slowed. In August 1989, Cree introduced the first commercially available blue LED based on the indirect bandgap semiconductor, silicon carbide (SiC). SiC LEDs had very low efficiency, no more than about 0.03%, but did emit in the blue portion of the visible light spectrum.[citation needed]


Question: What substance helped demonstrate the first blue electroluminescence?

Answer: zinc-doped gallium nitride

The first blue-violet LED using magnesium-doped gallium nitride was made at Stanford University in 1972 by Herb Maruska and Wally Rhines, doctoral students in materials science and engineering. At the time Maruska was on leave from RCA Laboratories, where he collaborated with Jacques Pankove on related work. <hl> In 1971, the year after Maruska left for Stanford, his RCA colleagues Pankove and Ed Miller demonstrated the first blue electroluminescence from zinc-doped gallium nitride , though the subsequent device Pankove and Miller built, the first actual gallium nitride light-emitting diode, emitted green light. <hl> In 1974 the U.S. Patent Office awarded Maruska, Rhines and Stanford professor David Stevenson a patent for their work in 1972 (U.S. Patent US3819974 A) and today magnesium-doping of gallium nitride continues to be the basis for all commercial blue LEDs and laser diodes. These devices built in the early 1970s had too little light output to be of practical use and research into gallium nitride devices slowed. In August 1989, Cree introduced the first commercially available blue LED based on the indirect bandgap semiconductor, silicon carbide (SiC). SiC LEDs had very low efficiency, no more than about 0.03%, but did emit in the blue portion of the visible light spectrum.[citation needed]

The first blue-violet LED using magnesium-doped gallium nitride was made at Stanford University in 1972 by Herb Maruska and Wally Rhines, doctoral students in materials science and engineering. At the time Maruska was on leave from RCA Laboratories, where he collaborated with Jacques Pankove on related work. In 1971, the year after Maruska left for Stanford, his RCA colleagues Pankove and Ed Miller demonstrated the first blue electroluminescence from <hl> zinc-doped gallium nitride <hl>, though the subsequent device Pankove and Miller built, the first actual gallium nitride light-emitting diode, emitted green light. In 1974 the U.S. Patent Office awarded Maruska, Rhines and Stanford professor David Stevenson a patent for their work in 1972 (U.S. Patent US3819974 A) and today magnesium-doping of gallium nitride continues to be the basis for all commercial blue LEDs and laser diodes. These devices built in the early 1970s had too little light output to be of practical use and research into gallium nitride devices slowed. In August 1989, Cree introduced the first commercially available blue LED based on the indirect bandgap semiconductor, silicon carbide (SiC). SiC LEDs had very low efficiency, no more than about 0.03%, but did emit in the blue portion of the visible light spectrum.[citation needed]

In 1971, the year after Maruska left for Stanford, his RCA colleagues Pankove and Ed Miller demonstrated the first blue electroluminescence from <hl> zinc-doped gallium nitride <hl> , though the subsequent device Pankove and Miller built, the first actual gallium nitride light-emitting diode, emitted green light.


Question: In what decade were breakthroughs made that brought in the modern era of GaN-based optoelectronic devices?

In the late 1980s, key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices. Building upon this foundation, Dr. Moustakas at Boston University patented a method for producing high-brightness blue LEDs using a new two-step process. Two years later, in 1993, high-brightness blue LEDs were demonstrated again by Shuji Nakamura of Nichia Corporation using a gallium nitride growth process similar to Dr. Moustakas's. Both Dr. Moustakas and Mr. Nakamura were issued separate patents, which confused the issue of who was the original inventor (partly because although Dr. Moustakas invented his first, Dr. Nakamura filed first).[citation needed] This new development revolutionized LED lighting, making high-power blue light sources practical, leading to the development of technologies like BlueRay, as well as allowing the bright high resolution screens of modern tablets and phones.[citation needed]

Answer: 1980s

<hl> In the late 1980s , key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices. <hl> Building upon this foundation, Dr. Moustakas at Boston University patented a method for producing high-brightness blue LEDs using a new two-step process. Two years later, in 1993, high-brightness blue LEDs were demonstrated again by Shuji Nakamura of Nichia Corporation using a gallium nitride growth process similar to Dr. Moustakas's. Both Dr. Moustakas and Mr. Nakamura were issued separate patents, which confused the issue of who was the original inventor (partly because although Dr. Moustakas invented his first, Dr. Nakamura filed first).[citation needed] This new development revolutionized LED lighting, making high-power blue light sources practical, leading to the development of technologies like BlueRay, as well as allowing the bright high resolution screens of modern tablets and phones.[citation needed]

In the late <hl> 1980s <hl>, key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices. Building upon this foundation, Dr. Moustakas at Boston University patented a method for producing high-brightness blue LEDs using a new two-step process. Two years later, in 1993, high-brightness blue LEDs were demonstrated again by Shuji Nakamura of Nichia Corporation using a gallium nitride growth process similar to Dr. Moustakas's. Both Dr. Moustakas and Mr. Nakamura were issued separate patents, which confused the issue of who was the original inventor (partly because although Dr. Moustakas invented his first, Dr. Nakamura filed first).[citation needed] This new development revolutionized LED lighting, making high-power blue light sources practical, leading to the development of technologies like BlueRay, as well as allowing the bright high resolution screens of modern tablets and phones.[citation needed]

In the late <hl> 1980s <hl> , key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices.


Question: Who first patented a method to produce high-brightness blue LEDs?

Answer: Shuji Nakamura

In the late 1980s, key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices. Building upon this foundation, Dr. Moustakas at Boston University patented a method for producing high-brightness blue LEDs using a new two-step process. <hl> Two years later, in 1993, high-brightness blue LEDs were demonstrated again by Shuji Nakamura of Nichia Corporation using a gallium nitride growth process similar to Dr. Moustakas's. <hl> Both Dr. Moustakas and Mr. Nakamura were issued separate patents, which confused the issue of who was the original inventor (partly because although Dr. Moustakas invented his first, Dr. Nakamura filed first).[citation needed] This new development revolutionized LED lighting, making high-power blue light sources practical, leading to the development of technologies like BlueRay, as well as allowing the bright high resolution screens of modern tablets and phones.[citation needed]

In the late 1980s, key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices. Building upon this foundation, Dr. Moustakas at Boston University patented a method for producing high-brightness blue LEDs using a new two-step process. Two years later, in 1993, high-brightness blue LEDs were demonstrated again by <hl> Shuji Nakamura <hl> of Nichia Corporation using a gallium nitride growth process similar to Dr. Moustakas's. Both Dr. Moustakas and Mr. Nakamura were issued separate patents, which confused the issue of who was the original inventor (partly because although Dr. Moustakas invented his first, Dr. Nakamura filed first).[citation needed] This new development revolutionized LED lighting, making high-power blue light sources practical, leading to the development of technologies like BlueRay, as well as allowing the bright high resolution screens of modern tablets and phones.[citation needed]


Question: Who first invented a method to produce high-brightness blue LEDs?

Answer: Dr. Moustakas

In the late 1980s, key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices. <hl> Building upon this foundation, Dr. Moustakas at Boston University patented a method for producing high-brightness blue LEDs using a new two-step process. <hl> Two years later, in 1993, high-brightness blue LEDs were demonstrated again by Shuji Nakamura of Nichia Corporation using a gallium nitride growth process similar to Dr. Moustakas's. Both Dr. Moustakas and Mr. Nakamura were issued separate patents, which confused the issue of who was the original inventor (partly because although Dr. Moustakas invented his first, Dr. Nakamura filed first).[citation needed] This new development revolutionized LED lighting, making high-power blue light sources practical, leading to the development of technologies like BlueRay, as well as allowing the bright high resolution screens of modern tablets and phones.[citation needed]

In the late 1980s, key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices. Building upon this foundation, <hl> Dr. Moustakas <hl> at Boston University patented a method for producing high-brightness blue LEDs using a new two-step process. Two years later, in 1993, high-brightness blue LEDs were demonstrated again by Shuji Nakamura of Nichia Corporation using a gallium nitride growth process similar to Dr. Moustakas's. Both Dr. Moustakas and Mr. Nakamura were issued separate patents, which confused the issue of who was the original inventor (partly because although Dr. Moustakas invented his first, Dr. Nakamura filed first).[citation needed] This new development revolutionized LED lighting, making high-power blue light sources practical, leading to the development of technologies like BlueRay, as well as allowing the bright high resolution screens of modern tablets and phones.[citation needed]


Question: What technology was made possible by high-power blue light sources?

Answer: BlueRay

In the late 1980s, key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices. Building upon this foundation, Dr. Moustakas at Boston University patented a method for producing high-brightness blue LEDs using a new two-step process. Two years later, in 1993, high-brightness blue LEDs were demonstrated again by Shuji Nakamura of Nichia Corporation using a gallium nitride growth process similar to Dr. Moustakas's. <hl> Both Dr. Moustakas and Mr. Nakamura were issued separate patents, which confused the issue of who was the original inventor (partly because although Dr. Moustakas invented his first, Dr. Nakamura filed first).[citation needed] This new development revolutionized LED lighting, making high-power blue light sources practical, leading to the development of technologies like BlueRay , as well as allowing the bright high resolution screens of modern tablets and phones.[citation needed] <hl>

In the late 1980s, key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices. Building upon this foundation, Dr. Moustakas at Boston University patented a method for producing high-brightness blue LEDs using a new two-step process. Two years later, in 1993, high-brightness blue LEDs were demonstrated again by Shuji Nakamura of Nichia Corporation using a gallium nitride growth process similar to Dr. Moustakas's. Both Dr. Moustakas and Mr. Nakamura were issued separate patents, which confused the issue of who was the original inventor (partly because although Dr. Moustakas invented his first, Dr. Nakamura filed first).[citation needed] This new development revolutionized LED lighting, making high-power blue light sources practical, leading to the development of technologies like <hl> BlueRay <hl>, as well as allowing the bright high resolution screens of modern tablets and phones.[citation needed]

Both Dr. Moustakas and Mr. Nakamura were issued separate patents, which confused the issue of who was the original inventor (partly because although Dr. Moustakas invented his first, Dr. Nakamura filed first).[citation needed] This new development revolutionized LED lighting, making high-power blue light sources practical, leading to the development of technologies like <hl> BlueRay <hl> , as well as allowing the bright high resolution screens of modern tablets and phones.[citation needed]


Question: What is one modern gadget that benefits from high-power blue LED lighting?

Answer: tablets

In the late 1980s, key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices. Building upon this foundation, Dr. Moustakas at Boston University patented a method for producing high-brightness blue LEDs using a new two-step process. Two years later, in 1993, high-brightness blue LEDs were demonstrated again by Shuji Nakamura of Nichia Corporation using a gallium nitride growth process similar to Dr. Moustakas's. <hl> Both Dr. Moustakas and Mr. Nakamura were issued separate patents, which confused the issue of who was the original inventor (partly because although Dr. Moustakas invented his first, Dr. Nakamura filed first).[citation needed] This new development revolutionized LED lighting, making high-power blue light sources practical, leading to the development of technologies like BlueRay, as well as allowing the bright high resolution screens of modern tablets and phones.[citation needed] <hl>

In the late 1980s, key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices. Building upon this foundation, Dr. Moustakas at Boston University patented a method for producing high-brightness blue LEDs using a new two-step process. Two years later, in 1993, high-brightness blue LEDs were demonstrated again by Shuji Nakamura of Nichia Corporation using a gallium nitride growth process similar to Dr. Moustakas's. Both Dr. Moustakas and Mr. Nakamura were issued separate patents, which confused the issue of who was the original inventor (partly because although Dr. Moustakas invented his first, Dr. Nakamura filed first).[citation needed] This new development revolutionized LED lighting, making high-power blue light sources practical, leading to the development of technologies like BlueRay, as well as allowing the bright high resolution screens of modern <hl> tablets <hl> and phones.[citation needed]


Question: What Nobel Prize did Nakamura, Amano, and Akasaki receive in 2014?

Nakamura was awarded the 2006 Millennium Technology Prize for his invention. Nakamura, Hiroshi Amano and Isamu Akasaki were awarded the Nobel Prize in Physics in 2014 for the invention of the blue LED. In 2015, a US court ruled that three companies (i.e. the litigants who had not previously settled out of court) that had licensed Mr. Nakamura's patents for production in the United States had infringed Dr. Moustakas's prior patent, and order them to pay licensing fees of not less than 13 million USD.

Answer: Physics

Nakamura was awarded the 2006 Millennium Technology Prize for his invention. <hl> Nakamura, Hiroshi Amano and Isamu Akasaki were awarded the Nobel Prize in Physics in 2014 for the invention of the blue LED. <hl> In 2015, a US court ruled that three companies (i.e. the litigants who had not previously settled out of court) that had licensed Mr. Nakamura's patents for production in the United States had infringed Dr. Moustakas's prior patent, and order them to pay licensing fees of not less than 13 million USD.

Nakamura was awarded the 2006 Millennium Technology Prize for his invention. Nakamura, Hiroshi Amano and Isamu Akasaki were awarded the Nobel Prize in <hl> Physics <hl> in 2014 for the invention of the blue LED. In 2015, a US court ruled that three companies (i.e. the litigants who had not previously settled out of court) that had licensed Mr. Nakamura's patents for production in the United States had infringed Dr. Moustakas's prior patent, and order them to pay licensing fees of not less than 13 million USD.


Question: What award did Nakamura receive in 2006 for his invention?

Answer: Millennium Technology Prize

<hl> Nakamura was awarded the 2006 Millennium Technology Prize for his invention. <hl> Nakamura, Hiroshi Amano and Isamu Akasaki were awarded the Nobel Prize in Physics in 2014 for the invention of the blue LED. In 2015, a US court ruled that three companies (i.e. the litigants who had not previously settled out of court) that had licensed Mr. Nakamura's patents for production in the United States had infringed Dr. Moustakas's prior patent, and order them to pay licensing fees of not less than 13 million USD.

Nakamura was awarded the 2006 <hl> Millennium Technology Prize <hl> for his invention. Nakamura, Hiroshi Amano and Isamu Akasaki were awarded the Nobel Prize in Physics in 2014 for the invention of the blue LED. In 2015, a US court ruled that three companies (i.e. the litigants who had not previously settled out of court) that had licensed Mr. Nakamura's patents for production in the United States had infringed Dr. Moustakas's prior patent, and order them to pay licensing fees of not less than 13 million USD.


Question: How many companies did a judge say infringed on Dr. Moustakas's prior blue light patent in 2015?

Answer: three

Nakamura was awarded the 2006 Millennium Technology Prize for his invention. Nakamura, Hiroshi Amano and Isamu Akasaki were awarded the Nobel Prize in Physics in 2014 for the invention of the blue LED. <hl> In 2015, a US court ruled that three companies (i.e. the litigants who had not previously settled out of court) that had licensed Mr. Nakamura's patents for production in the United States had infringed Dr. Moustakas's prior patent, and order them to pay licensing fees of not less than 13 million USD. <hl>

Nakamura was awarded the 2006 Millennium Technology Prize for his invention. Nakamura, Hiroshi Amano and Isamu Akasaki were awarded the Nobel Prize in Physics in 2014 for the invention of the blue LED. In 2015, a US court ruled that <hl> three <hl> companies (i.e. the litigants who had not previously settled out of court) that had licensed Mr. Nakamura's patents for production in the United States had infringed Dr. Moustakas's prior patent, and order them to pay licensing fees of not less than 13 million USD.


Question: What was the fine given to the three companies?

Answer: not less than 13 million USD

Nakamura was awarded the 2006 Millennium Technology Prize for his invention. Nakamura, Hiroshi Amano and Isamu Akasaki were awarded the Nobel Prize in Physics in 2014 for the invention of the blue LED. <hl> In 2015, a US court ruled that three companies (i.e. the litigants who had not previously settled out of court) that had licensed Mr. Nakamura's patents for production in the United States had infringed Dr. Moustakas's prior patent, and order them to pay licensing fees of not less than 13 million USD . <hl>

Nakamura was awarded the 2006 Millennium Technology Prize for his invention. Nakamura, Hiroshi Amano and Isamu Akasaki were awarded the Nobel Prize in Physics in 2014 for the invention of the blue LED. In 2015, a US court ruled that three companies (i.e. the litigants who had not previously settled out of court) that had licensed Mr. Nakamura's patents for production in the United States had infringed Dr. Moustakas's prior patent, and order them to pay licensing fees of <hl> not less than 13 million USD <hl>.

In 2015, a US court ruled that three companies (i.e. the litigants who had not previously settled out of court) that had licensed Mr. Nakamura's patents for production in the United States had infringed Dr. Moustakas's prior patent, and order them to pay licensing fees of <hl> not less than 13 million USD <hl> .


Question: What are cladding layers?

By the late 1990s, blue LEDs became widely available. They have an active region consisting of one or more InGaN quantum wells sandwiched between thicker layers of GaN, called cladding layers. By varying the relative In/Ga fraction in the InGaN quantum wells, the light emission can in theory be varied from violet to amber. Aluminium gallium nitride (AlGaN) of varying Al/Ga fraction can be used to manufacture the cladding and quantum well layers for ultraviolet LEDs, but these devices have not yet reached the level of efficiency and technological maturity of InGaN/GaN blue/green devices. If un-alloyed GaN is used in this case to form the active quantum well layers, the device will emit near-ultraviolet light with a peak wavelength centred around 365 nm. Green LEDs manufactured from the InGaN/GaN system are far more efficient and brighter than green LEDs produced with non-nitride material systems, but practical devices still exhibit efficiency too low for high-brightness applications.[citation needed]

Answer: active region consisting of one or more InGaN quantum wells sandwiched between thicker layers of GaN

By the late 1990s, blue LEDs became widely available. <hl> They have an active region consisting of one or more InGaN quantum wells sandwiched between thicker layers of GaN , called cladding layers. <hl> By varying the relative In/Ga fraction in the InGaN quantum wells, the light emission can in theory be varied from violet to amber. Aluminium gallium nitride (AlGaN) of varying Al/Ga fraction can be used to manufacture the cladding and quantum well layers for ultraviolet LEDs, but these devices have not yet reached the level of efficiency and technological maturity of InGaN/GaN blue/green devices. If un-alloyed GaN is used in this case to form the active quantum well layers, the device will emit near-ultraviolet light with a peak wavelength centred around 365 nm. Green LEDs manufactured from the InGaN/GaN system are far more efficient and brighter than green LEDs produced with non-nitride material systems, but practical devices still exhibit efficiency too low for high-brightness applications.[citation needed]

By the late 1990s, blue LEDs became widely available. They have an <hl> active region consisting of one or more InGaN quantum wells sandwiched between thicker layers of GaN <hl>, called cladding layers. By varying the relative In/Ga fraction in the InGaN quantum wells, the light emission can in theory be varied from violet to amber. Aluminium gallium nitride (AlGaN) of varying Al/Ga fraction can be used to manufacture the cladding and quantum well layers for ultraviolet LEDs, but these devices have not yet reached the level of efficiency and technological maturity of InGaN/GaN blue/green devices. If un-alloyed GaN is used in this case to form the active quantum well layers, the device will emit near-ultraviolet light with a peak wavelength centred around 365 nm. Green LEDs manufactured from the InGaN/GaN system are far more efficient and brighter than green LEDs produced with non-nitride material systems, but practical devices still exhibit efficiency too low for high-brightness applications.[citation needed]

They have an <hl> active region consisting of one or more InGaN quantum wells sandwiched between thicker layers of GaN <hl> , called cladding layers.