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paper_id stringlengths 9 16	version stringclasses 26 values	yymm stringclasses 311 values	created timestamp[s]	title stringlengths 6 335	secondary_subfield sequencelengths 1 8	abstract stringlengths 25 3.93k	primary_subfield stringclasses 124 values	field stringclasses 20 values	fulltext stringlengths 0 2.84M
1802.08315	1	1802	2018-02-12T08:44:11	Probing the loss origins of ultra-smooth $\mathrm{Si_3N_4}$ integrated photonic waveguides	[ "physics.app-ph", "physics.optics" ]	On-chip optical waveguides with low propagation losses and precisely engineered group velocity dispersion (GVD) are important to nonlinear photonic devices such as soliton microcombs. Yet, despite intensive research efforts, nonlinear integrated photonic platforms still feature propagation losses orders of magnitude higher than in standard optical fiber. The tight confinement and high index contrast of integrated waveguides make them highly susceptible to fabrication induced surface roughness. Therefore, microresonators with ultra-high Q factors are, to date, only attainable in polished bulk crystalline, or chemically etched silica based devices, that pose however challenges for full photonic integration. Here, we demonstrate the fabrication of silicon nitride ($\mathrm{Si_3N_4}$) waveguides with unprecedentedly smooth sidewalls and tight confinement with record low propagation losses. This is achieved by combining the photonic Damascene process with a novel reflow process, which reduces etching roughness, while sufficiently preserving dimensional accuracy. This leads to previously unattainable \emph{mean} microresonator Q factors larger than $5\times10^6$ for tightly confining waveguides with anomalous dispersion. Via systematic process step variation and two independent characterization techniques we differentiate the scattering and absorption loss contributions, and reveal metal impurity related absorption to be an important loss origin. Although such impurities are known to limit optical fibers, this is the first time they are identified, and play a tangible role, in absorption of integrated microresonators. Taken together, our work provides new insights in the origins of propagation losses in $\mathrm{Si_3N_4}$ waveguides and provides the technological basis for integrated nonlinear photonics in the ultra-high Q regime.	physics.app-ph	physics	Probing the loss origins of ultra-smooth Si3N4 integrated photonic waveguides Martin H. P. Pfeiffer, Junqiu Liu, Arslan S. Raja, Tiago Morais, Bahareh Ghadiani, and Tobias J. Kippenberg∗ Laboratory of Photonics and Quantum Measurements (LPQM), Lausanne, CH-1015, Switzerland École Polytechnique Fédérale de Lausanne (EPFL), (Dated: February 26, 2018) 8 1 0 2 b e F 2 1 ] h p - p p a . s c i s y h p [ 1 v 5 1 3 8 0 . 2 0 8 1 : v i X r a On-chip optical waveguides with low propaga- tion losses and precisely engineered group veloc- ity dispersion (GVD) are important to nonlinear photonic devices such as soliton microcombs, and likewise can be employed for on chip gyroscopes, delay lines or Brillouin lasers. Yet, despite in- tensive research efforts, nonlinear integrated pho- tonic platforms still feature propagation losses or- ders of magnitude higher than in standard optical fiber. The tight confinement and high index con- trast of integrated waveguides make them highly susceptible to fabrication induced surface rough- ness. Therefore, microresonators with ultra-high Q factors are, to date, only attainable in polished bulk crystalline, or chemically etched silica based devices, that pose however challenges for full pho- tonic integration. Here, we demonstrate the fab- rication of silicon nitride (Si3N4) waveguides with unprecedentedly smooth sidewalls and tight con- finement with record low propagation losses. This is achieved by combining the photonic Damascene process with a novel reflow process, which re- duces etching roughness, while sufficiently pre- serving dimensional accuracy. This leads to pre- viously unattainable mean microresonator Q fac- tors larger than 5×106 for tightly confining waveg- uides with anomalous dispersion. Via system- atic process step variation and two independent characterization techniques we differentiate the scattering and absorption loss contributions, and reveal metal impurity related absorption to be an important loss origin. Although such impuri- ties are known to limit optical fibers, this is the first time they are identified, and play a tangible role, in absorption of integrated microresonators. Taken together, our work provides new insights in the origins of propagation losses in Si3N4 waveg- uides and provides the technological basis for in- tegrated nonlinear photonics in the ultra-high Q regime. INTRODUCTION Low propagation losses are a central requirement for planar on-chip optical waveguides in diverse application areas such as narrow linewidth lasers [1], integrated de- lay lines [2], gyroscopes [3] and quantum photonic cir- cuits [4]. Recently, the ability to achieve low loss and tight confinement waveguides, with precisely engineered dispersion properties, has become central to nonlinear in- tegrated photonics, notably microresonator based optical frequency combs [5, 6] operating in the dissipative Kerr soliton regime [7, 8] (soliton microcombs). Such soliton microcombs have enabled synthesis of broadband and co- herent optical frequency combs with microwave line spac- ing in integrated devices, that have enabled counting of optical frequencies [9–11], dual comb spectroscopy [12], terabit coherent communication [13], ultrafast dual comb ranging [14, 15], low noise microwave generation [16], as- trophysical spectrometer calibration [17, 18], and an all- photonic integrated frequency synthesizer [19]. Yet, while optical fibers with propagation losses below 0.5 dB/km form the backbone of today's global communi- cation infrastructure, on-chip waveguides exhibit several orders of magnitude higher attenuation coefficients. The low losses of optical fibers were enabled by high-purity glasses developed in response to the seminal work of Kao that predicted low loss optical fibers when reducing im- purities [20]. So far, ultra-high Q microresonators could attain comparable values only when mitigating scattering losses via low confinement geometries or chemical polish- ing, in platforms such as silica wedges[21], or bulk crys- talline resonators [22]. These platform are relying from a materials perspective on high purity glass, as used in op- tical fibers, or ultra-pure crystalline materials, originally developed for deep UV lithography [23, 24]. However, such platforms are not easily compatible with photonic integration: the low refractive index of silica waveguides requires an air-cladding, complicating photonic integra- tion, while the fabrication of crystalline resonators is in- compatible with common CMOS technology [25]. As a consequence, materials that achieve similar levels of loss as silica, but with higher index for strong light confine- ment, could have significant benefit in the technologi- cal development of photonic integrated ultra-high Q mi- croresonator technology. Figure 1a) compares the attenuation and nonlinear coefficient, α and γ, of the diverse low-loss waveguide and (ultra-)high-Q microresonator platforms. High in- dex materials allow for tight confinement of light (small effective mode area Aeff) and, following Miller's rule, a higher nonlinear refractive index n2. Together, these features allow to attain effective nonlinear coefficients γ = (2πn2)/(λAeff ) significantly higher than for low-loss crystalline or silica based platforms. 2 FIG. 1. Nonlinear waveguide platforms and photonic Damascene process with reflow step. a) Overview of nonlinear coefficients γ and attenuation α for different nonlinear waveguide platforms. Dashed lines indicate similar nonlinear performance based on a constant ratio of γ/α. b) Schematic process flow of the photonic Damascene process highlighting the newly introduced preform reflow step, which consists in heating the substrate for sufficient time above its glass transition temperature. c,d) Final waveguide cross section from photonic Damascene process without and with reflow step. Rounding of the waveguide corners and an increased sidewall angle of 8◦ are observed after reflow. In this context, silicon nitride (Si3N4) waveguides [26] are an interesting compromise between nonlinearity, and propagation losses. First studied in the 1980'ies [27] - it has emerged as a material platform for efficient non- linear photonics, based on advances in processing that allowed overcoming the challenges of inherent film stress [28]. The material system's wide transparency range and large bandgap of ∼ 5 eV allows applications at visible wavelengths in the bio-medical context [29], telecom and mid-infrared wavelengths [30]. Together, these proper- ties allow the realization of tightly confining waveguides with high effective nonlinearity and precisely engineered, anomalous group velocity dispersion (GVD). The result- ing low power threshold for parametric processes, has enabled the generation of broadband Kerr soliton fre- quency combs including dispersive waves [8] and coher- ent supercontinuum generation from high-repetition rate pulse trains [31]. Recent studies have shown that the intrinsic material absorption is compatible with propagation losses below of 1 dB/m, and Q factors exceeding 2× 107, at wavelengths around 1550 nm [32–34]. However, the studies have not brought forward insights into where the residual losses are emanating from. Moreover, they were based on large waveguide geometries, chosen to limit scattering losses but incompatible with broadband dispersion engineering. To date, it remains an outstanding challenge to fabricate Si3N4 waveguides with reduced scattering losses, rivaling the nonlinear performance of silica wedge and polished crystalline microresonators. Here, building on recent advances of the photonic Damascene fabrication process [35], we demonstrate a methodology to create unprecedented smooth waveg- uides, that provide for the first time a platform in which (tightly confining) integrated photonics in the ultra-high Q regime can be made a reality. Importantly, our ap- proach does not sacrifice mode confinement as in previ- ous studies [32, 33, 56], and allows integrating resonators and bus waveguides within one material platform and layer. We perform an in-depth loss study for waveguides based on this novel process and are able to provide ev- idence that metal impurities are an important origin of propagation losses. Although such impurities have been known to limit optical fibers, this is the first time they are identified, and play a tangible role, in the absorption of integrated photonic waveguides and microresonators. The photonic Damascene reflow process, as shown here, provides already record mean Q-factors (> 5 × 106) for tightly confining (2 × 0.6 µm) waveguides, which when combined with materials without impurities can attain values well in excess of 107. PHOTONIC DAMASCENE PROCESS WITH PREFORM REFLOW The photonic Damascene process solves several fabri- cation challenges of high-confinement Si3N4 waveguides by inverting the common processing order, as schemat- ically illustrated in Figure 1b). Instead of etching the waveguide pattern into the highly stressed, micron thick Si3N4 film, the latter is deposited onto a preform struc- tured with recesses that form the waveguide pattern. A dense filler pattern surrounding the waveguide pat- 1. Waveguide patterning2. Filler patterning3. Preform etching5. Si3N4 deposition6. Planarisation7. Cladding & annealingResistSiliconSi3N4SiO2b)1250°C4. Preform reflowa) attentuation α (dB/m) nonlinear coefficient γ (1/Wm)10-210-110010110210310-410-2100102104109108107106105MgF2PCFSiO2 discSiO2 Fabry-PerotAlGaAsSOISi rich SiNSi3N4AlNDiamondon-chip waveguide platformsWGM and fiber platforms1 (dB W)-10.1 (dB W)-10.001 (dB W)-1this worknormal GVDSi3N4unloaded Q0NEWc)d)8°200nm200nmSi3N4SiO2Si3N4SiO2no preform reflowpreform reflowtern relaxes the high tensile Si3N4 film stress and pre- vents crack formation. Planar top surfaces, enabling heterogenous integration via bonding [36] and with 2D materials, are prepared by removing the excess Si3N4 using chemical mechanical polishing. The process en- ables the reliable fabrication of closely spaced high- confinement waveguides, which have successfully been applied in a growing number of nonlinear photonics ex- periments [13, 15, 37, 38]. As an addition to the above mentioned advantages, we incorporate a novel reflow step before the Si3N4 deposi- tion, aiming at smoothing the roughness of the waveguide preform. For this purpose, the wafer is heated slightly above the preform's glass transition temperature TG, in case of the wet thermally grown SiO2 preform about 1475 K [39]. The surface-tension driven smoothing re- duces especially the high spatial frequency components of the dry etch induced striations on the recess sidewalls. Here, we use a reflow process which consists of an 18h long anneal at 1523 K in oxygen atmosphere. As the tem- perature exceeds TG only slightly, long annealing times are required. This is beneficial to control the reflow pro- cess and limit the changes in waveguide cross section. Nevertheless, as shown in Figure 1c,d), an increased side- wall angle of 8◦ and rounding of the waveguide corners is observed after the reflow. The ultra-low roughness of the SiO2 preform surface after the reflow step can hardly be perceived in scan- ning electron micrographs (see e.g Figure 2 in the SI). Atomic force microscopy (AFM) provides a method to measure such roughness to sub-nm levels and has been previously employed to asses the sidewall roughness of optical waveguides [40, 41]. To this end the AFM's tip is scanned along the waveguide sidewall, or in the present case along the waveguide recess' sidewall, as explained in detail in the SI. Denoting the local deviations from the waveguide dimensions by the random variable f (z), the 1-D auto-correlation function R(uz) =(cid:80) f (z)f (z + uz) can be calculated. Common theoretical models estimate the scattering loss induced by the sidewall roughness based on the auto-correlation functions's RMS deviation σ and correlation length d [42]. By fitting with a model composed of an exponential and a periodic part, we ex- tract values of σ = 0.18 nm and d = 36 nm for the recess sidewall roughness after the reflow step. While the mea- sured correlation lengths of the recess sidewall roughness is similar to previous works on Si and InP waveguides [40, 43, 44], the estimated RMS deviation is significantly lower than previously reported values for Si3N4 waveg- uides [41]. SYSTEMATIC PROCESS COMPARISON Next, we systematically compare the influence of the reflow step and other process variations on the propa- 3 gation losses of high-confinement Si3N4 waveguides. We infer the propagation losses by analyzing microresonator resonances whose linewidth κ/2π is the sum of the cou- pling losses from the resonator to the bus waveguide κex/2π and the internal losses κ0/2π. The latter are related to the propagation coefficient α [m−1] as α = (neff κ0)/c. The waveguide's core dimensions have strong influence on the propagation losses and, in contrast to previous works [32, 33], the here presented analysis fo- cuses on dimensions allowing for broadband anomalous GVD at telecom wavelengths, an important property for nonlinear photonic applications. For our analysis we choose 100-GHz FSR microresonators with a radius of ∼ 230 µm, a core width of 1 µm, 1.5 µm or 2 µm and a core height of 0.6 − 0.85 µm. Frequency calibrated transmission traces of microres- onator devices are recorded for a wavelength range from 1500 nm to 1630 nm and processed using a setup and methods similar to the ones described in [38]. The reso- nances are automatically identified in the recorded trans- mission trace and the intrinsic loss rates κ0/2π are ex- tracted through fitting of their lineshape. For this pur- pose either a Lorentzian lineshape model or a resonance doublet model are used. The latter can accurately fit res- onance doublets with asymmetric lineshapes, as shown in Figure 2a), and is discussed in detail in a later sec- tion. Based on their mutual FSR the resonances are manually grouped into mode families, which are iden- tified through comparison with simulations. The res- onator coupling regime is identified by comparing the trend of resonance linewidth to power extinction on reso- nance for resonators with the same geometry but varying resonator-bus waveguide distance on the same chip. The further analysis is based only on resonators in the under- coupled regime for which the intrinsic loss rate κ0 dom- inates the overall cavity losses and coupling ideality re- lated excess losses are low [38]. As the intrinsic linewidths can vary significantly across different resonances of the same microresonator, a single resonance measurement is not representative for a given device. In order to faith- fully compare the performance of different fabrication processes, we therefore measure the statistical distribu- tion of κ0/2π extracted from up to 150 resonances. As shown in Figure 2b), the distribution can be well fitted using a Burr distribution [45] and its maximum is chosen as performance indicator, representing the most probable propagation loss value for the microresonator device. Figure 2c) summarizes the loss performance observed for samples from 6 wafers with different process param- eters. Per wafer the most probable loss value of the fun- damental quasi-TE and quasi-TM mode families for sev- eral under-coupled 100-GHz FSR microresonators with 1.5 µm or 2 µm width are plotted. The adjacent table highlights the mutual processing differences among the wafers and further processing details of each wafer can be found in the SI. The process parameters were varied 4 FIG. 2. Systematic process comparison and resonance doublet analysis for 100-GHz FSR microresonators. a) Resonance doublet with asymmetric linewidths fitted to extract the doublet asymmetry rate δκ/2π and the resonance splitting γ/2π, in addition to the intrinsic linewidth κ0/2π. b) Histogram showing the occurrence of κ0/2π values within 5 MHz bins for the quasi-TM mode of a 2 µm wide microresonator from wafer 3. The distribution is fitted using a Burr distribution (red) to extract the most probable linewidth value (red arrow). c) Comparison of microresonator loss performance upon systematic variation of process parameters. d) Comparison of intrinsic loss rates for quasi-TE and -TM modes for microresonators with different widths, fabricated with and without reflow process. Improvements through the reflow process are visible for tightly confining waveguides with widths of 1.5 µm and smaller. e-h) Resonance doublet characteristics for 1.5 µm wide microresonators from different wafers. The mean coupling rate (cid:104)γ/2π(cid:105) and mean doublet asymmetry rate (cid:104)δκ/2π(cid:105) are plotted for quasi-TM (e,g) and quasi-TE (f,h) polarized fundamental modes. Triangles indicate mean values based on less than 3 values. Linear correlations between the mean intrinsic loss rate and splitting or asymmetry rates are shown as dashed lines. The expected mean intrinsic loss rate for vanishing scattering is indicated. with the goal to observe trends originating from one of the usually suspected loss origins. Scattering losses due to sidewall roughness depend sensitively on the lithogra- phy and etching process used, and should be strongly re- duced by the reflow step. Absorption losses are often as- sociated with overtones of hydrogen impurities and high temperatue annealing steps of the Si3N4 core as well as the SiO2 cladding films are known to reduce their resid- ual hydrogen content. The results in Figure 2c) show no general trend for the loss relation between TE and TM polarized mode families, but the best values for both polarizations are achieved in the larger, 2 µm wide waveguides. The influ- ence of annealing time as well as of the lithography pro- cess seems to be non-trivial, hinting to the fact that nei- ther hydrogen related absorption nor sidewall roughness induced scattering losses have a clearly dominating role in the loss budget. Surprisingly, the comparison of wafers fabricated with and without reflow reveals little improve- ments. Similar observations are made when comparing different lithography processes and the best linewidths reached for most wafers is κ0/2π ≈ 50 MHz. This is dif- ferent for cladding free devices, and reveals the negative influence of the low temperature oxide (LTO) cladding. waveguide width (µm)κ0/2� (MHz)c)e)g)h)f)TM11TM11TE11TE11asymmetry rate <δκ/2�)><κ0/2�> (MHz)splitting rate <γ/2�>50100150050100150001020304002040608010010011.52200300806040d)Ebeam litho. - reflow - wafer 3 Stepper litho. - reflow - wafer 4Ebeam litho. - no reflow - wafer 1fundamental TM familyfundamental TE familyTM00 familyTE00 family2µm width1.5µm widthfew visibleresonancedoublets<κ0/2�> = 22.9 MHz<κ0/2�> = 23.2 MHz<κ0/2�> = 32.7 MHzδκ/2�γ/2�24h N2 1200°CyesnoEbeam13h N2 1200°C11h N2 1200°CyesyesEbeam23h N2 1200°C3h N2 1200°CyesyesEbeam33h N2 1200°C3h N2 1200°CyesyesDUV43h N2 1200°C3h N2 1200°CnoyesDUV53h N2 1200°CnoyesDUV6nononononoyeswafernoannealnoanneallithographyreflowBHF dipSi3N4annealcladdingcladdinganneal406080100κ0/2� (MHz)-5000500 frequency (MHz)11.11.2 transmission (a.u.)a)datafitb)406080100051015occuranceκ0/2� (MHz)datafitThe lowest mean linewidths, smaller than 35 MHz, are obtained when performing a short BHF dip directly after the reflow step. These values correspond to a resonator Q factors well above 5× 106 and propagation coefficients of ∼ 5 dB/m, record for waveguides with anomalous GVD. Although unclear before, beneficial effects of the reflow step are revealed when comparing the loss performance of resonators with different widths. In Figure 2d) the values for resonators with 1 µm, 1.5 µm and 2 µm width fabricated either with or without reflow as well as differ- ent lithography methods are compared. As noted before, for 2 µm wide waveguides no performance difference is visible but clear improvements through the reflow pro- cess are visible for samples with 1 µm and 1.5 µm width. Moreover, when applying a preform reflow the loss per- formance appears to be independent of the lithography technique for samples with widths of 1.5 µm or larger. A comparison of process step influence on loss perfor- mance is interesting, but unfortunately, the above pre- sented data allows only indirect and ambiguous guesses of the propagation loss origins. In fact, knowledge of the relative strength of scattering and absorption losses is de- sirable to guide fabrication efforts. In the following we determine their relative fraction using two independent methods. First, we analyze the relation of linewidth and resonance doublet splitting to derive a limiting loss value in the absence of scattering losses [43]. Second, the mea- surement of the resonances' thermal bistability allows us to infer a spectrally resolved absorption loss rate [46]. RESONANCE DOUBLET ANALYSIS Waveguide sidewall roughness couples the guided to ra- diation modes, causing scattering loss, and can moreover lead to a coherent build-up of the counter-propagating waveguide mode. A resonance doublet is observed if the coupling rate to the counter-propagating mode is simi- lar or larger than the total resonance decay rate κ. The relation between scattering induced loss and reflection is non-trivial, but strongly correlated, and the analysis of resonance doublets is a common means to estimate scat- tering losses [43, 47, 48]. Most previous works used a simple coupled mode equation (CME) system with a real coupling coefficient γ for the derivation of the splitted lineshape function [48, 49]. However, the resulting ex- pression does not provide accurate fitting for resonances doublets with unequal linewidths, as regularly observed in the context of high-confinement waveguide resonators [43, 50, 51]. In general the lineshape resulting from reflective scat- tering can vary strongly, and even resemble a Lorentzian with enlarged linewidth, depending on the relative posi- tion and amplitude of the participating scattering cen- ters [52]. Therefore, Li et al. have proposed an extended CME model which includes also second-order coupling 5 = −(cid:16) (cid:17) κ 2 am +i κc 2 processes via radiation modes [51]. The coherent (direct) and dissipative (indirect, via radiation bath) scattering processes are both loss-free but can interfere and thus yield a large variety of lineshapes including asymmet- ric resonance doublets. Here, we employ this extended model which practically entails a CME system with com- plex coupling coefficient κc = κc,R + iκc,I: √ i∆ω + a−m +δm,CW dam κexsin (1) dt with am and m,−m = {CW, CCW} being the modal amplitudes of clockwise and counter-clockwise circulat- ing modes, ∆ω the cavity detuning and sin the input laser driving the CW mode. As shown in Figure 2a), the resulting lineshape function accurately fits the asym- metric resonance doublet and allows for the extraction of both the real and imaginary part of κc. The re- sulting total coupling strength, summing coherent (di- rect) and dissipative (indirect) coupling processes, can then be expressed as γ = − (κc,R/2)2 + (κc,I/2)2. The doublet asymmetry rate, representing the competition between both coupling pathways and thus giving in- formation about their relative strength, is expressed as δκ = (κc,Rκc,I)/2. We are interested in the effect of different lithogra- phy techniques and the reflow process on the scatter- ing processes. To this end Figures 2e-h) compare the characteristics of doublet lineshapes for 1.5 µm wide mi- croresonators from the three wafers (1, 3 and 4) already analyzed for Figure 2d). For each resonator, consider- ing only their visibly splitted resonances, the mean value of the total coupling rate (cid:104)γ/2π(cid:105) and doublet asymme- try (cid:104)δκ/2π(cid:105) is plotted as function of the mean intrinsic loss rate (cid:104)κ0/2π(cid:105) for the fundamental quasi-TE and -TM modes. We note that the mean intrinsic loss rate is based only on the κ0/2π values extracted from fitting the res- onance doublets, values obtained from resonances with Lorentzian lineshape are omitted. The resulting values are indicated as triangles if less than three splitted reso- nances were found for the resonator. Both the total coupling rate as well as the doublet asymmetry of the quasi-TM modes exhibit a clear corre- lation with the mean intrinsic loss rate. Independently, for both correlations an intrinsic loss rate of κ0/2π ≈ 23 MHz for the case of vanishing scattering losses is ex- trapolated by fitting with a linear model. Moreover, the linewidth reduction through the preform reflow step can now be unambiguously related to a reduced waveguide surface roughness. This becomes evident through the ob- served simultaneous reduction of resonance splitting and linewidth asymmetry rates with intrinsic loss rate. While the quasi-TM mode displays clear trends, the situation is more complex for the values obtained for the quasi-TE polarization. For samples fabricated using electron beam lithography with or without reflow step, only few reso- 6 FIG. 3. Determination of the absorption loss rate κabs via thermal bistability spectroscopy of 100-GHz FSR microresonators with 1.5 µm wide waveguides. a) Measurement and fit of a skewed resonance lineshape due to the transient heating induced bistability. b) Linear correlation of extracted resonance drags for different dropped powers revealing the resonance's thermal susceptibility. c) Measured thermal susceptibilities of many resonances of a 100-GHz FSR microres- onator from wafer 3. A moving average of the obtained values is superimposed in yellow. The estimated limits of the thermal susceptiblity in the case of complete absorption of the dropped power are shown as dashed lines. The inset shows an example of the simulated heat distribution for a uniformly heated waveguide core. d) Measured intrinsic linewidths κ0/2π and their moving average in yellow, corresponding to the thermal susceptibilities shown in c). The estimated absorption rate limits are shown in red. The positions of modal crossings leading to local deviations of the resonance properties are indicated in gray. e, f) Intrinsic loss rates measured for uncladded devices fabricated with and without 15s BHF dip, as well as the estimated lower limited of their absorption loss rates. The expected spectral position of hydrogen related overtone absorptions are shown in gray. nances of each resonator show a visible splitting. This is different for resonators fabricated using stepper lithog- raphy for which most resonances of a given resonator exhibit visible splitting, with mean values about twice as large as found for the quasi-TM polarization. The latter is expected as the scattering for the quasi- TE polarization is dominated by the waveguide sidewall roughness which is higher than the waveguide's top and bottom surface roughness. In contrary, the little visibil- ity of resonance doublets for the electron beam lithogra- phy samples is puzzling. The loss performance of 2 µm wide samples, as presented in Figure 2c) and d), sug- gests that the losses other than scattering are similar for all three wafers. Moreover, for the non-reflown, 1.5 µm wide samples scattering rates higher than for reflown samples are expected and thus larger than the values of γ/2π ≈ 80 MHz obtained for wafer 4 (green) in Figure 2h). In a simple scattering model the microresonators from the non-reflown wafer 1 (blue) should thus support many visibly split resonance doublets, as their expected intrinsic linewidth κ0/2π ≈ 100 MHz (see Figure2c,d)) is on the same order. A similar reasoning can be made for wafer 3 (red), and overall we explain these observations by the non-trivial correlation between scattering losses and coherent reflection which depends on the statistical properties of the roughness, which are different for step- per or e-beam lithography. To extract a value for the intrinsic linewidth of the quasi-TE polarization in the absence of scattering losses, we base the correlation thus only on the values obtained for stepper lithography sam- ples. However, a reasonable value of κ0/2π = 32 MHz is only obtained via the values of the resonance asymmetry δκ. In conclusion, we estimate a scattering loss rate of ∼ 45 MHz for 1.5 µm wide waveguides when applying a preform reflow step, accounting for about two thirds of the total propagation losses. For larger waveguides lower values are expected and further experiments are needed to clarify the origin of the remaining losses. THERMAL BISTABILITY SPECTROSCOPY Next, we perform systematic measurements of the res- onance's thermal bistability to estimate the absorption loss rate [46, 53]. To this end the resonance frequency shift δω as function of dropped power Pd is measured, a quantity called thermal susceptibility χth in the follow- ing. δω and Pd are related via the local temperature in- crease ∆T in the mode volume, which originates from the modal crossings0.10.150.20.25 dropped power (mW)010203040 resonance drag (MHz)a)b)c)d)e)f)direction 1direction 2linear correlation1517nm Si-H 14801500152015401560 wavelength (nm)0200400600 susceptibility (MHz/mW)perfect cooling thermal isolationκabs/2�1460κabs, min/2�wafer 32040608010012014801500152015401560 wavelength (nm)1501nm N-H 1530nm Si-H κ0/2� (MHz)κ0/2� (MHz)146014801500152015401560 wavelength (nm)κabs, min/2�20406080100 frequency (MHz)0.811.21.4 transmission (a.u.)-5000500datafit146014801500152015401560 wavelength (nm)020406080100κ0/2� (MHz)wafer 5wafer 6SiSiO2SiO2heatedSi3N4 coreabsorbed fraction ζ of the dropped power: Pabs = ζPd. The thermo-refractive effect and the thermal expansion of the mode volume, both described by the frequency de- pendent coefficient β(ω), cause the resonance frequency shift upon heating as δω = β(ω)∆T . In practice, β(ω) can be easily measured by observing the resonance shift upon global heating of the sample, as described in de- tail in the SI. The structures thermal resistance Rth de- termines the local temperature increase upon heating with the absorbed power as ∆T = RthPabs and can be estimated via finite element simulations. Thus mea- suring χth allows to calculate the absorption fraction ζ = χth(Rthβ(ω))−1 which is alternatively expressed as absorption loss rate κabs = ζκ0. The thermal susceptibility is measured by recording the skewed, triangular lineshapes of resonance upon red detuning a sufficiently intense laser across them, as shown in Figure 3a). Such skewing originates from the ther- mal self-lock between driving laser and the resonance [54] and can be fitted with a steady-state model describing the bistability via a cubic equation to extract the associ- ated resonance frequency shift δω. In order to precisely measure the dropped power on resonance, the frequency shift is measured for both on-chip coupling directions. As shown in Figure 3b), a linear correlation of the measured resonance frequency shifts versus dropped powers allows then to determine the resonance's thermal susceptibility χth. Limiting values of the thermal resistance are simu- lated by considering a constant heating power in the core area and a fixed ambient temperature or perfect thermal isolation on the cladding top surface. This allows to cal- culate boundaries for χth, shown in Figure 3, for the case of complete absorption of the power. Based on the mea- sured and simulated values for the thermal susceptibility, as well as the measured intrinsic loss rates κ0/2π, an ab- sorption rate κabs/2π is then calculated. Details of the measurement setup, data processing and simulations can be found in the SI. We measure χth for quasi-TE polarized resonances of under-coupled 100-GHz FSR microresonators with 1.5 µm wide waveguides between 1460 nm and 1570 nm. As shown in Figure 3c) thermal susceptibilities around 80 MHz/mW are found for a fully cladded sample from wafer 3. With the estimated upper limits of χth these val- ues translate into a possible range for the absorption loss rate of up to κabs/2π ≈ 20 MHz±2 MHz between 1500 nm and 1540 nm and κabs/2π ≈ 9 MHz±2 MHz at the border of the measurement range. This result matches well with the residual, non-scattering losses found through the res- onance doublet analysis for the quasi-TM modes. Figure 3e,f) reveal similar absorption loss rates for uncladded samples from wafer 5 and 6, for which only a lower limit of κabs/2π (in the case of perfect top surface cooling) can be estimated. range The measurement regions (1500 nm to 1540 nm) where hydrogen impurity related spectral covers 7 FIG. 4. Concentration profile of common transition metal impurities in fully SiO2-cladded Si3N4 sample. Secondary ion mass spectroscopy (SIMS) allows to locally probed the metal concentration profile, as shown in the inset. The matrix raw ion counts of Si and N indicate the material layer composed of the top (LTO) and bottom (wet thermal oxide) cladding layers and the LPCVD Si3N4 in between (gray background). The profiling is performed for copper, iron and chromium impurities, out of which the detected signal levels of iron and chromium are below the detection limit. A cop- per concentration of ∼ 1018 atoms/cm3 is measured within the Si3N4 layer. absorption peaks are expected, as indicated in Figure 3e,f) [55, 56]. While in general the intrinsic loss rates κ0/2π (blue crosses) exhibit spectral variation, only in Figure 3e) a slight increase of κabs/2π commensurate with the central Si-H related overtone is observed. We conclude that the absorption losses in our samples, es- pecially in the best performing without top cladding, are dominated by a broadband absorbing species rather than the usually inculpated hydrogen impurities. Moreover, we find that the excess losses caused by the LTO cladding do not seem to be of absorptive nature, as the absorp- tion loss rates of cladded and uncladded samples are very similar. In summary, absorption loss rates of ∼ 20 MHz were found in the 1.5 µm wide waveguides, account for al- most half the propagation losses. For wider waveguides a further reduction of the scattering loss contribution, and consequently a higher fraction of absorption losses in the total loss budget, is expected. MATERIAL ANALYSIS Overtones of the optically active modes of Si-H and N-H bonds are the usual suspects for impurity related absorption losses in Si3N4 waveguides [55, 56]. The wave- length independent absorption loss rate that was found in the previous section brings this common knowledge into question for the here presented samples. Transition depth (µm) concentration (atoms/cm3) secondary ion intensity (counts/s)CuFeCrSi (raw ion counts)N (raw ion counts )01234510151016101710181019021010104profilingdirectionmetal ions are an important class of impurities in the con- text of optical fibers, causing broadband absorption even at ppm-level concentrations [57]. Due to their efficient electronic trapping such impurities are also well-known in CMOS fabrication technology [58], e.g. in the context of solar cells [59], but to be best of our knowledge have never been considered in integrated photonics. The precise measurement of ppm-level transition metal impurity concentrations is challenging and previously their concentration in LPCVD Si3N4 thin films has been measured using vapor phase decomposition and X-ray fluorescence [60]. Here, we use glow discharge mass spec- troscopy (GDMS) to analyze the concentration of com- mon transition metals in samples of unprocessed SiO2 and Si3N4 thin films. GDMS uses the rare gas ions cre- ated in a cathode discharge to sputter material of a sur- face. The sputter products are subsequently atomized in the glow discharge plasma, before entering a mass spec- trometer. The technique offers impurity detection limits in the ppb range and does not suffer from matrix effects [61]. Indeed, we measure concentrations between 0.1 − 2 ppmwt for transition metals, such as Cr, Fe and Cu, in all thin films that form the optical waveguide, even before processing. A detailed overview can be found in Table 2 in the SI. Typical processing steps such as dry etching and high temperature anneals can also in- troduce impurities into the device, as well as cause their diffusive redistribution. To test the impurity levels in a final device and corroborate our findings, secondary ion mass spectroscopy (SIMS) is performed on fabricated samples to obtain quantified concentration profiles of the most prominent transition metal and hydrogen impuri- ties. SIMS uses a localized ion beam to atomize material from the film stack which is subsequently analyzed in a mass spectrometer. A disadvantage of SIMS are so-called matrix effects which relate to the interaction between the ion beam and the matrix material, causing varying im- purity extraction efficiency for different materials. Figure 4 shows the results obtained for a fully-cladded sample from wafer 3. Measurement details and fur- ther data for other samples are found in the SI. Neither chromium nor iron could be detected in concentrations above the respective detection limits but a copper con- centration of ∼ 1018 atoms/cm3 (≈ 10 ppm wt) is found in the Si3N4 core area. Moreover, as shown in Figure 3 in the SI, hydrogen and chlorine impurities are found in concentrations of ∼ 5×1020 atoms/cm3 (≈ 5000 ppm wt), respectively ∼ ×1019 atoms/cm3 (≈ 100 ppm wt). Based on these values, an exact derivation of the ab- sorption losses induced by the impurities is difficult. Not only the values obtained by mass spectroscopy have sig- nificant error bars but also the absorbance of transition metal ions depends on their valence state which is gener- ally unknown. For copper only the Cu2+ state is highly absorptive and thus literature values on absorption per 8 ppm impurity concentration range from 0.1 dB/km/ppm to several hundreds dB/km/ppm [57, 62, 63]. We note that for an impurity concentration of 1 − 10 ppmwt, as found for several transition metals in our samples, a value of 100 dB/km/ppm would equal to a significant broad- band absorption loss rate of κabs/2π ≈ 10 − 100 MHz in the telecom C-band. CONCLUSION In summary we have presented a novel photonic Dam- ascene reflow process enabling the fabrication of ultra- smooth waveguides. Using two independent characteri- zation techniques we determined the scattering and ab- sorption loss rates for tightly confining waveguide geome- tries, relevant for nonlinear photonics experiments. Our systematic study revealed a significant reduction of the scattering losses by the reflow process, resulting in dom- inant absorption losses in the best samples. A process study identified the cladding oxide as one main limit- ing factor for the current devices and mean resonator Q- factors in excess of 5×106 in tightly confining waveguides are obtained. Moreover, for the first time, we were able to relate absorption losses in on-chip waveguides to the presence of transition metal ions. This is an important finding also relevant to the application of Si3N4 waveg- uides in the visible range [26] where the absorption of most transition metal ions reached peak values [57]. Our results provide important insights into the losses origins of the widely used Si3N4 waveguide platform. Based on this understanding future fabrication process improve- ments and new, advanced materials will enable on-chip microresonators for nonlinear applications with ultra- high Q-factors and propagation losses less than 1 dB/m. Data availability. The code and data used to produce the plots within this paper are available at DOI:10.5281/zenodo.1169648. All other data used in this study are available from the corresponding authors upon reasonable request. Acknowledgements Si3N4 microresonator samples were fabricated in the EPFL Center of MicroNanotechnology (CMi). This pub- lication was supported by Contract HR0011-15-C-0055 from the Defense Advanced Research Projects Agency (DARPA), Defense Sciences Office (DSO). This work was supported by funding from the Swiss National Science Foundation under grant agreement No. 161573. ∗ [email protected] [1] Michael Belt, Jock Bovington, Renan Moreira, Jared F Bauters, Martijn J R Heck, Jonathon S Barton, John E Bowers, and Daniel J Blumenthal. Sidewall gratings in ultra-low-loss Si3N4 planar waveguides. Optics express, 21(1):1181–8, 2013. [2] Hansuek Lee, Tong Chen, Jiang Li, Oskar Painter, and Kerry J. Vahala. Ultra-low-loss optical delay line on a silicon chip. Nature Communications, 3(867), 2012. [3] F. Dell'Olio, T. Tatoli, C. Ciminelli, and M. N. Ar- menise. 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1812.07784	1	1812	2018-12-19T07:18:15	Quick and repeatable shear modulus measurement based on torsional resonance and torsional wave propagation using a piezoelectric torsional transducer	[ "physics.app-ph" ]	Shear modulus is one of the fundamental mechanical properties of materials, while its quick and accurate measurement is still a challenge. Here we proposed two methods for shear modulus measurement based on torsional resonance and torsional wave propagation using a same piezoelectric torsional transducer. Firstly, the torsional transducer was introduced which consists of two thickness poled, thickness shear (d15) piezoelectric half-rings. Secondly, the equivalent circuit of the transducer-cylindrical specimen system is derived and the shear modulus can be explicitly obtained using the torsional resonance frequency. The internal friction can also be obtained, which is calculated by using an approximate formula. Then, the principle of shear modulus and internal friction measurement based on torsional wave propagation were presented. Finally, shear modulus and internal friction measurement on four materials including 1045 steel, aluminum, quartz glass and PMMA, were conducted. Results indicate that the measured shear moduli using these two methods are very close to each other, and consistent with the reference values in literatures. The resonance method is quite convenient and highly repeatable, but is typically not suitable for long specimens where the first torsional resonance may not be visible. The wave propagation method is especially suitable for long specimens and high frequency measurement is suggested. The internal frictions measured by these two methods were also close to each other, and the simple wave attenuation method is suggested. The two shear modulus measurement methods proposed in this work are quite reliable and can be widely used in near future.	physics.app-ph	physics	Quick and repeatable shear modulus measurement based on torsional resonance and torsional wave propagation using a piezoelectric torsional transducer Mingyu Xie1,2, Qiang Huan1,2, Faxin Li1,2,3,a) 1 LTCS and College of Engineering, Peking University, Beijing 100871, China 2 Center for Applied Physics and Technology, Peking University, Beijing, China 3Beijing Key Laboratory of Magnetoelectric Materials and Devices, Peking University, Beijing, China Abstract Shear modulus is one of the fundamental mechanical properties of materials, while its quick and accurate measurement is still a challenge. Here we proposed two methods for shear modulus measurement based on torsional resonance and torsional wave propagation using a same piezoelectric torsional transducer. Firstly, the torsional transducer was introduced which consists of two thickness poled, thickness shear (d15) piezoelectric half-rings. Secondly, the equivalent circuit of the transducer-cylindrical specimen system is derived and the shear modulus can be explicitly obtained using the torsional resonance frequency. The internal friction can also be obtained, which is calculated by using an approximate formula. Then, the principle of shear modulus and internal friction measurement based on torsional wave propagation were presented. Finally, shear modulus and internal friction measurement on four materials including 1045 steel, aluminum, quartz glass and PMMA, were conducted. Results indicate that the measured shear moduli using these two methods are very close to each other, and consistent with the reference values in literatures. The resonance method is quite convenient and highly repeatable, but is typically not suitable for long specimens where the first torsional resonance may not be visible. The wave propagation method is especially suitable for long specimens and high frequency measurement is suggested. The internal frictions measured by these two methods were also close to each other, and the simple wave attenuation method is suggested. The two shear modulus measurement methods proposed in this work are quite reliable and can be widely used in near a) Author to whom all correspondence should be addressed, Email: [email protected] 1 future. Keywords: Shear modulus, piezoelectric transducer, torsional resonance, equivalent circuit, torsional wave 1. Introduction Elastic moduli are the fundamental material properties and of great importance in engineering and science. For isotropic materials, there only exist two independent elastic moduli, i.e., the Young's modulus (E) and the shear modulus (G). Currently there are quite a few methods that can be used to measure the Young's modulus and shear modulus. It is well known that the static moduli can be measured by using the applied quasi-static tension (compression) and torsion. If not mandatory, the quasi-static methods are usually not suggested as the testing errors are typically large which can reach 5% or even larger. Dynamic testing methods are generally of good accuracy and most methods are valid for both Young's modulus and shear modulus measurement. In a famous interlaboratory testing program in 1980s,1 six dynamic testing methods were used, i.e., 1) free-free beam resonance;2 2) Impulse excitation technique;3 3) Ultrasonic wave velocity method;4 4) Piezoelectric ultrasonic composite oscillator technique (PUCOT);5 5) Ultrasonic pulse spectroscopy;6 6) Magnetically excited resonance method.7 The measured Young's moduli of two Inconel alloys using different methods agreed well with each other, with the maximum relative error of only 1.6%. However, in that program, measurement on the shear modulus were not reported or not conducted. Actually, shear modulus is of special importance in solid state matters. For example, gradual variations of shear modulus had been observed in polymers, glass, metal glass, etc., during phase transitions (or glass transitions).8-10 Thus, accurate measurement of shear modulus can be used to monitor these complicated physics process. Besides above-mentioned methods that can be used to measure both Young's modulus and shear modulus,2-7 there is also a special method only applicable to shear modulus measurement, i.e., the torsion pendulum.11 It should be noted that the existing methods for shear modulus measurement were either somewhat inaccurate or not easy to conduct. The free-free beam method,2 which measured the shear modulus based on the torsional 2 resonance of a rectangular bar-shaped specimen, is strongly dependent on the support location and support manner. Furthermore, to make the torsional resonance not very high (typically below 30kHz) to avoid the excitation difficulty, the length of the bar cannot be very short (typically larger than 80mm) and the thickness cannot be large (typically less than 3mm for metals), thus the fabrication errors on the thickness is difficult to control and this would introduce significant errors in shear modulus measurement. The impulse excitation technique,3 which excites the specimen by a light mechanical impulse and analyzes the resultant transient vibration, required a complicated circuit and algorithm to extract the fundamental frequency thus the modulus. For the ultrasonic wave velocity method,4 the shear modulus measurement were conducted on a bar or rectangular specimen. Typically a shear-mode transducer were bonded or coupled onto the lateral face of the specimen and the round-trip travelling time of high frequency pulses (typically above 5MHz) in the specimen were extracted to calculate the shear wave speed thus the shear modulus. Note that as the thickness of the specimen is on the same order with the wavelength, actually complicated guided wave propagates in the specimen. Thus, extraction of phase velocity instead of the ground velocity is not straightforward,12 typically based on the pulse echo superposition method13 or the pulse echo overlap method.14, 15 The PUCOT5, 16 is typically only used for measurement of Young's modulus and mechanical damping. Shear modulus measurement using PUCOT were never reported although torsional oscillation were also excited for damping measurement.17 The ultrasonic pulse spectroscopy6 and the magnetically excited resonance method7 were not commonly used due to their complicated testing components and/or algorithm. The torsion pendulum method is typically only applicable to thin wires (bars) or soft materials,11, 18, 19 thus it cannot act as a general method for shear modulus measurement and the testing error is relatively large, typically of several percent.19 As indicated in the ASTM standard,20 theoretically shear modulus measurement using a cylinder specimen is both simpler and more accurate than that using a rectangular bar. However, experimental difficulties in exciting torsional resonance usually preclude its use in determining the shear modulus. Johnson et al excited the resonant torsional modes in a cylindrical aluminum rod using electromagnetic acoustic transducers (EMAT) consisting of 24 rows of magnets and meander coils and measured the shear wave velocity with very good consistence.21 Note that the 3 EMAT method is only applicable to metals and the complicated structure of the EMAT makes this method not suitable for practical shear modulus measurement. In this work, we firstly proposed a piezoelectric torsional transducer based on two thickness-poled, thickness-shear (d15) PZT half-rings. Then, the torsional transducer was bonded on one end of a cylinder specimen to excite torsional vibration and torsional guided waves. Equivalent circuit model22 was used to analyze the transducer-specimen composite system and the shear modulus of the specimen can be explicitly obtained by measuring the electromechanical resonance of the transducer-specimen system using an impedance analyzer. The non-dispersive fundamental torsional wave T(0,1) can be excited by using this torsional transducer. Thus measurement of the shear wave velocity and then the shear modulus is straightforward. Formulas of the internal friction measurement using these two methods were also presented. Then, both the shear modulus and internal friction measurement were conducted on four types of materials including 1045 steel, aluminum, quartz glass and PMMA. The measurement results were compared with each other and consistent with the reference values. This work provides a quick and highly repeatable solution to the shear modulus measurement on cylinder samples, which can also be used to study the shear modulus variations during or after mechanical loading (tension/compression, torsion, etc.) where circular cross-section specimen are commonly employed. 2. Principle of shear modulus measurement based on a piezoelectric torsional transducer 2.1 The thickness-poled piezoelectric torsional transducer As mentioned above, more accurate shear modulus measurement can be realized by excitation of torsional resonance in a cylinder sample while the structure of the EMAT to excite torsional vibration is too complicated for practical testing.19 A piezoelectric torsional transducer should excite torsional vibration of a cylinder sample easily in the contact mode. However, the well-known shear mode quartz oscillator is not a good torsional transducer since its properties are not uniform along the circumferential direction.17 The currently available Langevin-type piezoelectric torsional transducer is rather difficult to fabricate since it is circumferentially poled 4 after many steps.23 Note that it is almost impossible to make the synthetic circumferential polarization uniform, especially when its diameter gets smaller. Here we proposed a novel piezoelectric torsional transducer consisting of two thickness-poled piezoelectric half-rings, which is very easy to fabricate. As shown in Fig.1, a PZT ring (with the outer diameter D, inner diameter d, and thickness h) is firstly poled along the thickness direction. After poling, the ring is evenly cut into two half-rings. Then, the top/bottom electrodes were removed and lateral electrodes were spread on the cutting faces of the two half-rings. Finally, the two half-rings were bonded together using conductive epoxy with the poling directions opposite to each other. Thin copper wires were inserted between the bonding faces for electrical excitation/reception. Fig.1 The piezoelectric torsional transducer consisting of two thickness-poled piezoelectric half-rings. 2.2 Equivalent-circuit model for the piezoelectric torsional transducer 2.2.1 Theory We firstly analyze the vibration mode of the thickness-poled piezoelectric half-ring. As shown in Fig.1b, when an electric field is circumferentially applied to the thickness-poled piezoelectric half-ring, there only exists the circumferential displacement in the half-ring, i.e., both the axial and radial displacements should be zero. Furthermore, the electric field should be uniform along the circumferential direction. Thus, we have 5 (1) Here 𝑢𝜃 is the circumferential displacement, Θ𝑃 is the angular displacement，𝑉𝜃 is the applied voltage and 𝐸𝜃 is the electric field. Then the only non-zero shear strain of the half-ring can be expressed as The piezoelectric constitutive equations can be written as where (2) (3) (4) Where 𝑠44 𝐸 is the elastic coefficient in short circuit, 𝑑15 is the piezoelectric coefficient, 𝐷𝜃 is the electric displacement along the circumferential direction, 𝑃11 𝜎 is the stress-free dielectric constant. 𝑄𝑚𝑃 is the mechanical quality factor of the PZT and 𝑄𝑒 is the electric quality factor of the PZT. The equilibrium equation is (5) where 𝜌𝑃 is the mass density of the piezoelectric half-ring. By substituting Eq.(3a) into Eq.(5) and bearing in mind that the circumferential electric field is constant along the thickness, we can get the vibration equation of the piezoelectric half-ring to be: (6) 6 ,,,PurztrztVEr,Pzztrz44151511EzzzsdEDdPE4444441111114444111111EEEEEmPessjsppjpsQspQp22zPuzt22222,,PPPztztctzwhere (7) The approximate solution of Eq.(6) is where (8) (9) Here 𝑐𝑃 is the shear wave velocity of the piezoelectric ceramics in short circuit，𝜔𝑃 is the angular frequency. 𝑘𝑃 is the wavenumber whose real part determines the speed of sound and the imaginary part determines the attenuation of the wave amplitude. For the general solution in Eq.(8), the boundary conditions of the velocity is Then we can get Based on the mechanical boundary conditions: (10) (11) (12) The transport equations for the vibrations of the piezoelectric torsional half-ring can be obtained to be: 7 44444411112PPPEPPEPPEmPPccjcscscQs11,cossinPjtPPPztAkzBkze12PPPPmPPkjcQc012PzpzhUU111211tansinPPjtPjtPPPUAejUUBejkhkh102zzzzhFrdAFrdA (13) Where 𝑍𝑃 ∗ is the impedance of the piezoelectric torsional half-ring, 𝑁∗ is the electromechanical conversion coefficient of the piezoelectric torsional half-ring, 𝐶0 ∗ is the static capacitance, 𝑃11 𝜀 is the constrained dielectric constant, and (14) Now let us analyze the vibration mode of the piezoelectric torsional ring consisting of two half-rings with the opposite polarization. It can be easily deduced that the transport equation will keep the same form as Eq.(13) but the related coefficients will be doubled, i.e., 𝑁=2𝑁∗；𝑍𝑃=2𝑍𝑃 ∗ ； 𝐶0=2𝐶0 ∗ will replace the coefficients 𝑁∗, 𝑍𝑃 ∗ and 𝐶0 ∗ respectively and 𝐹1 = 2𝐹1 ∗;. 𝐹2 = 2𝐹2 ∗; I = 2𝐼∗. Then, the general equivalent circuit of the torsional piezoelectric ring can be obtained, as plotted in Fig.2(a) where the mechanical boundary conditions for the up/bottom faces are not prescribed. For the usual case, both the up and bottom faces of the ring is stress-free and the corresponding equivalent circuit turns to be Fig.2(b). According to Fig.2(b), we can get the expression of the admittance to be: (15) 8 112212120tan2sinsintansin2sinPPPPPPPPPPPPPkhZZFZjUUNVjkhjkhZkhZFUZjUNVjkhjkhINUNUjCV4444221544011215111144648lnPPEPEEkDdZsdDdNshDCPddPPs20cot22PPPNYjCZjkh Fig.2 The equivalent circuit of the piezoelectric torsional transducer consisting of two thickness-poled half-ring. (a) General case; (b) The case with the up/bottom faces stress-free. 2.2.2 Experimental verification To verify the equivalent circuit model of the piezoelectric torsional transducer, we measured the frequency dependent admittance curve of the transducer and the results were shown in Fig.3 where the theoretical results calculate from Eq. (15) were also presented for comparison. The size of the piezoelectric torsional transducer was measured by using a micrometer caliper and the results are: outer diameter of 12.00mm±0.06mm, inner diameter of 5.40mm±0.04mm, and thickness of 1.92mm±0.02mm. The material constants of the piezoelectric ring were provided by 9 the manufacturer and listed as follows: the density 𝜌𝑃 = 7500kg/m3, elastic constant 𝑠44 ′𝐸 = 43.5 × 10−12m2/N , piezoelectric constant 𝑑15 = 741 × 10−12C/N , relative dielectric constant 𝑃11 ′𝜎/𝜀0 = 3130 and 𝜀0 is the vacuum permittivity. Note that the electrical quality factor has no effect on the sharpness of the resonance peak. It only affects the slope of the whole curve, so we use the parameters 𝑄𝑒=50 supplied by the manufacturer. By fitting the testing results, the mechanical quality factor is extracted to be 𝑄𝑚𝑃=18. This is not consistent with the manufacturer's value of 65, which may be due to the fact that the quality factor is not only related to the material, but also to the vibration mode. Fig.3 The measured and theoretical (with different mechanical quality factors) admittance curves of the piezoelectric torsional transducer It can be seen from Fig.3 that overall the theoretical curves with 𝑄𝑚𝑃=18 can fit quite well with the measured curves, which indicated the validity of the equivalent circuit model. 2.3 Shear modulus measurement based on electromechanical torsional resonance If the above-mentioned piezoelectric torsional transducer is perfectly bonded onto a cylindrical specimen with its diameter equal to the outer diameter of the transducer, as shown in Fig.4, it is expected that torsional vibration can be excited in the cylindrical specimen. Since the 10 torsional resonance frequency of the cylindrical specimen (typically ~several 10kHz for metals) is much lower than the corresponding torsional resonance frequency of the piezoelectric transducer (~460kHz), the resonance frequency of the transducer-specimen composite system should be very close to the specimen's resonance frequency as the specimen's mass is typically much larger than that of the transducer. Fig.4 Testing setup for shear modulus measurement based on electromechanical torsional resonance using a piezoelectric torsional transducer 2.3.1 Equivalent circuit model of the transducer-specimen composite system Considering the internal friction, the shear modulus of the specimen can be written as (16) For a single cylindrical specimen, the equilibrium equation for its torsional vibration can be expressed as The general solution for Eq.(17) is: where 11 (17) (18) 1mMGGjGGQG22222,,MMMztztctz22,cossinMjtMMMztAkzBkze (19) Here 𝑘𝑀 is the complex wavenumber whose real part determines the speed of sound, and the imaginary part determines the attenuation of the amplitude. 𝑐𝑀, 𝜌𝑀, G are the shear wave velocity, mass density and shear modulus of the testing specimen, respectively. 𝑄𝑚𝑀 is the quality factor of the specimen. Similar as the derivation process of the equivalent circuit mode for the piezoelectric torsional transducer, based on the boundary conditions of the cylindrical specimen's velocity: and the boundary conditions of the forces: (20) (21) The transport equations of the cylindrical specimen can be obtained as： where Taking into account the displacement continuity on the transducer-specimen interface, i.e., We can get 𝜔𝑀=𝜔𝑃。 12 (22) (23) (24) 1212MMMMMMMMmMMMMMMMmMMGccjcGcGcQkkjkjcQc023MzMzLUU203zzzzLFrdAFrdA223323tan2sinsintansin2sinMMMMMMMMMMMMkLZZFZjUUjkLjkLZkLZFUZjUjkLjkL432MMGDZc,00,0,,PzhtMztztztBased on Eq.(22) and the equivalent circuit model in Fig.2(a), the equivalent circuit model for the transducer-specimen composite system can be derived straightforwardly as shown in Fig.5(a). Taking into account the stress-free conditions on both ends, the equivalent circuit model can then be simplified to be Fig.5(b). Fig.5 The equivalent circuit of the transducer-specimen composite system. (a) General case; (b) The case with From Fig.5b, the admittance of the transducer-specimen system can be obtained as follows: the up/bottom faces stress-free. (25) (26) where 2.3.2 Experimental validation 13 20NYjCZ2tantan2tantan2MPPMPPPMMkLZZZkhZkhZjZjkL To verify the equivalent circuit model for the transducer-specimen composite system, the frequency-dependent admittance curves of the torsional transducer bonded on three different specimens (1045 steel bars with the length of 55mm and 100mm, PMMA bar with the length of 55mm) were measured using an impedance analyzer (Agilent 4294A) and compared with the theoretical results based on Eq.(25), as shown in Fig.6. In the theoretical calculations, the employed material parameters and specimen size were listed in Table I. It can be seen from Fig.6 that the for all the three testing specimens, the theoretical admittance curves can be very close to the measured admittance curves if using the suitable internal friction (𝑄𝑚𝑀 −1 ) for the specimen, which indicates the validity of the equivalent circuit model. From Fig.6, it can also be seen that for longer specimen (the 100mm-long 1045 steel bar), the first torsional resonance is almost invisible. This is because that for longer specimens, the first torsional resonance frequency is much lower than that of the piezoelectric torsional transducer, making the vibration amplitude of the composite system rather small thus the first resonance peak is not so significant. For longer specimens, the higher resonance modes can be used to derive the shear modulus. Table I. Material parameters and specimen sizes of the transducer-specimen system used in the equivalent circuit model verification. PZT torsional transducer 1045 steel bar ℎ d D 𝜌𝑃 ′𝐸 𝑠44 ′𝜎 𝑃11 𝑑15 ε0 𝑄𝑚𝑃 𝑄𝑒 1.92mm 5.40mm 12.00mm 7500kg/m3 43.5 × 10−12m2/N 3130ε0 741 × 10−12C/N 8.8542 × 10−12 18 50 L D 𝜌𝑀 𝐺 L D 𝜌𝑀 𝐺 55.00mm;100.00mm 12.00mm 7780kg/m3 82.90Gpa PMMA bar 55.00mm 12.00mm 1195kg/m3 2.07Gpa It can also be seen from Fig.6 that with the increasing internal friction, the resonance peak becomes less significant. For the PMMA specimen whose internal friction is very large (𝑄𝑚𝑀 −1 ~0.04), all the resonance peaks are almost invisible, as shown in Fig.6(c). 14 Fig.6 Experimental and theoretical admittance curves of the torsional transducer bonded on different cylindrical specimens with different prescribed internal friction. (a) 55mm-long 1045 steel bar; (b) 100mm-long 1045 steel bar; (c) 55mm-long PMMA bar. 15 2.3.3 Extraction of the shear modulus and internal friction a) Shear modulus From Fig.6, we see that the internal friction of the specimen has little effect on the resonance frequency. Thus, to determine the specimen's shear modulus using the resonance frequency, internal friction can be neglected and all parameters are real numbers at this time. Thus based on Eq.( 25), when the admittance gets its maxima, the impedance is zero, i.e., (27) By substituting the expressions for 𝑍𝑃 and 𝑍𝑀 into Eq.(27), the relationship between the first resonance frequency 𝑓𝑟1 and the specimen's shear modulus G can be obtained as: (28) Where 𝑓𝑃1 is the first resonance frequency of PZT transducer which can be measured by the impedance analyzer directly. Note that Eq.(28) is a transcendental equation. With the measured first resonance frequency 𝑓𝑟1 , the shear modulus G can be obtained with high accuracy by numerical methods. However, in practical applications, it is not convenient to solve Eq.(25) numerically and an explicit expression for the shear modulus is requested. Bearing in mind that usually 𝐿 ≫ ℎ, when the transducer-specimen system approaches its first resonance, for most specimens we have Then Eq.(28) can be simplified to be 16 (29) tan0tanMPMPkLZZkh4111411tan221tanMrrPPMPdffLhfGDGf111111tan22tanMMrrrrPPfLfLGGffff (30) In the case that the rotary inertia of the transducer is at least two orders smaller than that of the specimen (i.e., 𝜌𝑃ℎ(1− 𝑑4 𝐷4) 𝜌𝑀𝐿 < 0.01), Eq.(30) can be further reduced to be: (31) That is, the influence of the piezoelectric transducer on the resonance frequency of the composite system can be neglected in this case with the induced testing error less than 2%. b) Internal friction Since in Fig.6, the sharpness of the resonance peak of the admittance curves varied continuously with the varied internal friction ( 𝑄𝑚𝑀 −1 ), 𝑄𝑚𝑀 −1 can be extracted by fitting the theoretical admittance curve to the measured curve. When the internal friction of the testing sample is not very large, it can be approximately obtained by using the following formula which was derived following the early work by Zacharias:24 (32)Where 𝑓𝑟𝑛 is the resonance frequency, 𝑓𝑎𝑛 is the anti-resonance frequency. 𝑌𝑟𝑛 is the admittance value corresponding to the resonance frequency and 𝑌𝑎𝑛 is the admittance value corresponding to the anti-resonance frequency. 2.3.4 Repeatability of the torsional resonance method Now let us discuss the testing errors of the electromechanical resonance method for shear modulus measurement. As indicated above, Eq.(28) can be used to calculate the shear modulus accurately using the measured fundamental resonance frequency 𝑓𝑟1. The total testing errors can then be classified into three types here: i) system errors which are caused by the difference between the 17 2442114MprMdLhDGf2214MrGLf400400()()121(1)()rnnnanPmMMnannrnanrnrnanffffhdQLDfYffffYYequivalent circuit model and the real transducer-specimen system, such errors are inevitable and difficult to estimate, but they can be reduced by calibration; ii) Numerical errors in solving Eq.(28), these errors can be well controlled by using advanced numerical methods and thus regarded to be negligible; iii) transferred errors from the measurement of other quantities, including 𝜌𝑀, 𝜌𝑃, 𝑓𝑃1, 𝐷, 𝑑, 𝐿, ℎ, which can be well estimated and controlled. Therefore, the absolute testing errors on shear modulus measurement using this torsional resonance method can be estimated if a standard testing specimen with known shear modulus is used. However, in practice, it is difficult to get such a standard specimen with the exact size and thus the absolute testing errors were not examined in this work. On the other hand, the repeatable errors can be easily evaluated and good repeatability is especially useful for a practical testing method. Here the piezoelectric torsional transducer is bonded onto the specimen using the 502 epoxy cement, which can be easily removed by using acetone. To estimate the repeatable errors, for the first testing, the transducer was bonded onto the specimen and the specimen's shear modulus was measured, then the transducer was removed from the specimen. For the second testing, the transducer was bonded onto the same specimen again and the shear modulus measurement was repeated. Successive testing can be done similarly. So the difference between different testing on a same specimen is mainly due to the different bonding conditions. In this work, to reduce the repeatable errors, the thickness of the bonding epoxy in each testing is to be controlled as the same as possible. Fig.7 shows that typical fundamental torsional resonance curves of the transducer bonded on a 100mm-long steel bar and a 100mm-long aluminum bar for two measurements. It can be seen that for both specimens, the repeatability errors for the torsional resonance frequency measurement is typically less than 0.1%. According to Eq.(30), the repeatability errors for the shear modulus measurement can be within 0.2%, which is good enough to sense the modulus variations during phase transitions8-10 or material degradations.25 18 Fig.7 Typical testing repeatability for the fundamental torsional resonance of the transducer-specimen (100mm long) composite system. 2.4 Shear modulus and internal friction measurement based on torsional wave propagation 2.4.1 Shear modulus Since the two-half-ring based piezoelectric torsional transducer is bonded onto the cylindrical specimen, the shear modulus of the specimen can also be measured based on torsional wave propagation. The piezoelectric torsional transducer is expected to excite torsional guided waves in the cylindrical specimen among which the fundamental torsional mode T(0,1) should be dominant.26 This is because the deformation of the torsional transducer is uniform along the circumferential direction. Since T(0,1) mode is non-dispersive and its velocity always equals that of the bulk shear wave. The shear modulus can then be obtained via the following formula if the shear wave velocity is measured: (33) Where the density 𝜌 can be obtained by measuring the mass, the diameter and the length of the cylindrical specimen. 19 sGv Fig.8 Experimental setup for shear modulus and internal friction measurement based on torsional wave propagation In this work, the group velocity (or time of flight) of the T(0,1) wave mode is measured by using the conventional pulse-echo method. Fig.8 shows the experimental setup for the measurement of time of flight. A five-cycle or seven-cycle Hanning window-modulated sinusoid signal generated by a functional generator (Agilent 33220A) was used to drive the torsional transducer to generate torsional wave in the specimen. A circuit converter was used to make the torsional transducer both serve as wave actuator and sensor. Both the drive signal and the received signals were recorded and displayed by the oscilloscope. Note that the wave travel time inside the transducer was subtracted when measuring the time of flight in the specimen. It should be noted that the torsional transducer is usually excited around (or at least not far from) its own resonance frequency (about 460kHz in this work) to ensure that enough energy can be transferred to the testing specimen. Typically, the resonance frequency of the torsional transducer is well above the cutting off frequency of the second (or higher) order torsional wave T(0,2) in a cylindrical sample. For example, Fig.9 shows the phase velocity (up, solid line) and group velocity (bottom, dashed line) curves of different torsional wave modes in a 12-mm diameter 1045 steel specimen. It can be seen that the torsional transducer's resonance frequency of about 460kHz is even higher than the cutting off frequency of the third order torsional wave mode T(0,3) in the steel specimen. Thus, T(0,2) and T(0,3) modes may also be excited in this case and signal 20 processing should be used to extract the T(0,1) mode. Fig.9 The phase velocity (solid line) and group velocity (dashed line) versus frequency curves for a 12mm-diameter cylindrical steel sample of infinite length 2.4.2 Internal friction According to Eq.(19)，when the internal friction is taken into account, the wavenumber is a complex number, and the harmonic wave in the specimen can be written as: (34) Then the logarithmic attenuation of the torsional wave is calculated to be (35) The internal friction 𝑄𝑚𝑀 −1 is expressed as: (36) 21 ()()()00sssjkxvtkxvtjkxvtAeAee()00,0()00,2/ln2ssskxvtxtkxvtxtLvAeLkAe12smMvQLf 3. Measurement results and discussions In this work, the shear modulus and internal friction of four types of materials, i.e., 1045 steel, aluminum, quartz glass and PMMA, were measured using both the torsional resonance method and the torsional wave propagation method. The testing results were presented in Section 3.1 and 3.2, respectively. 3.1 Measurement results using the torsional resonance method Table II Shear modulus and internal friction measurement results of four types of materials using the torsional resonance method Testing density Length First Shear modulus (GPa) Reference measured Reference materials (𝐾𝑔/𝑚3) (mm) torsional based on resonance (kHz) Eq.(28) Eq.(30) Eq.(31) −1 𝑄𝑚𝑀 (10-3) −1 𝑄𝑚𝑀 (10-3) shear modulus (GPa) 1045 steel 7780 ± 7.8 100 16.03 82.93 82.83 79.96 78.8 2.34 0.5 ∼ 4.0 ± 0.05 ± 0.01 ± 0.19 ± 0.19 ± 0.19 ∼ 83.8 Aluminum 2773 ± 2.8 100 14.81 26.88 26.81 24.33 25.4 5.20 1.5 ∼ 7.0 ± 0.05 ± 0.01 ± 0.06 ± 0.06 ± 0.06 ∼ 27.1 Quartz glass 2193 ± 2.2 100 17.72 31.21 31.12 27.54 30.0 9.79 5.0 ∼ 20.0 ± 0.05 ± 0.01 ± 0.06 ± 0.06 ± 0.06 ∼ 33.2 PMMA 1195 ± 1.2 55 9.98 2.06 2.11 2.62 2.0 ∼ 2.3 12.4 20.0 ∼ 100.0 ± 0.05 ± 0.01 ± 0.005 ± 0.005 ± 0.005 The measured shear modulus and internal friction (𝑄𝑚𝑀 −1 ) of the four types of materials using the torsional resonance method were listed in Table II where the reference values from literatures were also presented for comparison. It can be seen from Table II that the calculated shear modulus G based on the exact solution in Eq.(28) is very close to that based on the approximate solution in Eq.(30), with the deviations of less than 0.3% for the first three lossless materials and of about 2% for the lossy PMMA. Furthermore, all the measured shear modulus based on Eq.(28) and Eq.(30) fit well with the reference values from literatures. Bearing in mind that Eq.(30) is an explicit expression for the shear modulus, it is more convenient for practical use than the implicit Eq.(28). In comparison, the calculated shear modulus based on Eq.(31), i.e., neglecting the transducer's effect, differs up to 10% from the value based on Eq.(30) for the three lossless materials and about 22 30% for the lossy PMMA. Thus, the transducer's effect cannot be neglected for an accurate measurement. Therefore, Eq.(30) is the best solution to calculate the shear modulus based on the measured torsional resonance frequency. From Table II, it can also be seen that the measured internal friction (𝑄𝑚𝑀 −1 ) using the approximate formula Eq.(32) are also close to the reference values for the three types of lossless materials. While for the lossy PMMA, the calculated internal friction is obviously smaller than the reference values. This may be due to the fact that the approximate Eq.(32), which is based on the small damping assumption, cannot be applicable to the lossy materials. Thus, the torsional resonance method is not suitable for internal friction measurement on lossy materials. In addition, since the internal friction measured in this work is for the torsional mode, and the reference values are based on the tension/compression mode or bending mode, it is normal that they differ from each other to some extent. 3.2 Measurement results using the torsional wave propagation method Shear modulus and internal friction measurement were also conducted on the four types of materials based on the torsional wave propagation method using 5-cycle or 7-cycle Hanning windowed sinusoidal signal with the central frequency of 150kHz. Fig.10 shows the original received wave signals and that after continuous wavelet transformation (CWT) in a 200mm-long 1045 steel bar and a 100mm-long PMMA bar, respectively. As shown in Fig.10(a) and 10(b), the torsional wave velocity can be determined by measuring the time of flight between the two successive received wave package. The wave traveling time inside the 2mm-thick transducer should be removed using the shear wave velocity of 1750 m/s. The internal friction can also be obtained by measuring the amplitude of the two successive wave package and using Eq.(36). However, it should be noted that this approach works very well for the lossless materials, such as the steel, aluminum, quartz glass measured in this work. For lossy materials, such as the PMMA bar measured in this work, the second echo is almost invisible, as shown in Fig.10(c) and 10(d). Therefore, to measure the internal friction of lossy materials using the wave propagation method, short specimens are preferred to and large testing signals are required. 23 Fig.10 Drive and received torsional wave signals for 200mm-long 1045 steel (up) and 100mm-long PMMA (bottom) at 150kHz. Left: original signals; right: signals after continuous wavelet transformation (CWT). Fig.11 Frequency dependent shear velocity measurement results for four types of materials using the torsional wave propagation method. It should be noted that the received wave signals in Fig.10 are frequency dependent. Fig.11 shows the measured frequency dependent velocities for the four types of materials. It can be seen that for the three lossless materials, i.e., 1045 steel, aluminum, and quartz glass, the measured torsional wave velocity slightly increased with the testing frequency below 200kHz. This is partially due to 24 the fact that at low frequencies, the time of flight between the reflected signals cannot be accurately determined because of the large wave length at low frequencies (about 22mm for the 1045 steel at 150kHz, more than 1/10 of the specimen length). When the testing frequency is above 200kHz, the measured torsional wave velocity turns to be stable for all the four types of materials. Therefore, when measuring the torsional wave velocity of the cylindrical specimen, typically high frequency signal is required. In our experiences, the testing wavelength should be smaller than 1/12 of the specimen length. The measured stabilized shear wave velocity, shear modulus and internal friction for the four types of materials are listed in Table III. It can be seen that for all the four types of materials, the measured shear modulus is very close to that measured by using the torsional resonance method, and also consistent with the reference values, which indicates the validity of both methods in shear modulus measurement. As to the internal friction measurement, for the three types of lossless materials, the measurement results using the wave propagation method are also very close to that by the torsional resonance method. The measured internal friction of PMMA, which is 30.7E-3, is also consistent with the reference values of (20~100)E-3. As mentioned before, the approximate Eq.(32) is not suitable for internal friction measurement on very lossy materials based on the resonance method. Thus, for shear mode internal friction measurement on lossy materials, the torsional wave propagation method seems to be the unique solution if the torsion pendulum method cannot be applicable. Table III. Shear modulus and internal friction measurement results of four types of materials using the torsional wave propagation method. Testing Density Length Shear wave velocity Shear Internal materials (𝐾𝑔/𝑚3) (mm) 𝑣𝑠(𝑚/𝑠) modulus(GPa) friction 1045 steel 7780 ± 7.8 200 ± 0.05 3242.54 ± 20.00 81.80 ± 1.15 Aluminum 2773 ± 2.8 100 ± 0.05 3107.04 ± 30.00 26.77 ± 0.50 Quartz 2193 ± 2.2 100 ± 0.05 3740.42 ± 23.00 30.68 ± 0.40 glass (10-3) 2.38 5.47 8.87 PMMA 1195 ± 1.2 100 ± 0.05 1341.92 ± 10.00 2.15 ± 0.03 30.7 25 3.3 Discussions From the measurement results in Table II and Table III and the measurement principles in Section 2, it can be seen that for shear modulus measurement, if the specimen is not very long (say less than 100mm), the torsional resonance method is better than the torsional wave propagation method for its easy use and very good repeatability. The torsional resonance method can also be applicable for shear modulus measurement on long specimens using high order resonances, while in that case, extra efforts should be taken to identify the resonance order and the shear modulus calculation formula would be more complicated. So for long specimens, the wave propagation method is suggested. With regard to the internal friction measurement, as discussed above, the resonance method cannot be applicable to lossy materials which can be measured using the wave propagation method. It should be noted that although both the resonance method and wave propagation method work well for the internal friction measurement on lossless materials, very accurate measurement on internal friction is not possible because the interface effect between the transducer and the specimen cannot be exactly modelled. For the lossless metallic materials, the internal friction can be accurately measured based on the contactless electromagnetic acoustic resonance method (EMAR).27 While the EMAR is not applicable to non-metallic materials whose internal friction can be accurately measured based on the wave propagation method using very long specimens. 4. Conclusions In summary, we proposed two shear modulus measurement methods based on torsional resonance and torsional wave propagation using a same piezoelectric torsional transducer. The shear modulus measurement principles for both methods were derived and that for internal friction measurement were also presented. Testing results show that the torsional resonance method is more suitable for shear modulus measurement on short or middle-length bars (below 100mm) with high repeatability better than 0.2%. For longer specimen, the torsional wave propagation method is more suitable. As to the internal friction measurement, both methods works well for the lossless materials while for the lossy materials, only the wave propagation method is applicable. The proposed two methods using only one torsional transducer provide a quick and reliable solution to 26 shear modulus and internal friction measurement, which can be widely used in near future. Acknowledgement This work is supported by the National Natural Science Foundation of China under Grant Nos.11672003. References 1A. Wolfenden, M. Harmouche, G. Blessing, Y. Chen, P. Terranova, V. Dayal, V. Kinra, J. Lemmens, R. Phillips, J. Smith, P. Mahmoodi and R. Wann, Journal of Testing and Evaluation. 17(1),2 (1989). 2R. L. Wegel and H. Walther, Physics. 6,141 (1935). 3J. W. Lemmens, ASTM STP 1045, Am. Soc. Testing and Materials (1990). 4ASTM E 494-15, Am. Soc. Testing and Materials (2015). 5J. Marx, Review of Scientific Instruments. 22,503 (1951). 6V. K. Kinra and V. Dayal, Experimental Mechanics. 28,288 (1988). 7K. R. Lyall and J. F. Cochran, Canadian Journal of Physics. 49,1075 (1971). 8N. B. Olsen, J. C. Dyre and T. Christensen, Physical Review Letters. 81,1031 (1998). 9V. A. Khonik, Y. P. Mitrofanov, S. A. Lyakhov, A. N. Vasiliev, S. V. Khonik and D. A. Khoviv, Physical Review B. 79,132204 (2009). 10S. V. Khonik, A. V. Granato, D. M. Joncich, A. Pompe and V. A. Khonik, Physical Review Letters. 100,065501 (2008). 11C. J. Nederveen and C. W. van der Wal, Rheologica Acta. 6,316 (1967). 12K. Negita and H. Takao, Review of Scientific Instruments. 60,3519 (1989). 13H. J. McSkimin, The Journal of the Acoustical Society of America. 33,12 (1961). 14J. E. May, Proceedings of 1958 IRE National Convention. 15E. P. Papadakis, The Journal of the Acoustical Society of America. 42,1045 (1967). 16W. H. Robinson and A. Edgar, IEEE Transactions on Sonics and Ultrasonics. 21,98 (1974). 17W. H. Robinson, S. H. Carpenter and J. L. Tallon, Journal of Applied Physics. 45,1975 (1974). 18M. Weller, J. Diehl and H. E. Schaefer, Philosophical Magazine A. 63,527 (1991). 19Y. Longteng, L. Dabiao, P. Kai and H. Yuming, Measurement Science and Technology. 27,075601 (2016). 20ASTM E1875-08, Am. Soc. Testing and Materials (2008). 21W. Johnson, B. A. Auld and G. A. Alers, The Journal of the Acoustical Society of America. 95,1413 (1994). 22W. P. Mason, Proceedings of the Institute of Radio Engineers. 23,1252 (1935). 23J. O. Kim and O. S. Kwon, Journal of Sound and Vibration. 264,453 (2003). 24J. Zacharias, Physical Review. 44,116 (1933). 25F. Hofmann, D. Nguyen-Manh, M. R. Gilbert, C. E. Beck, J. K. Eliason, A. A. Maznev, W. Liu, D. E. J. Armstrong, K. A. Nelson and S. L. Dudarev, Acta Materialia. 89,352 (2015). 26J. L. Rose, Ultrasonic guided waves in solid media (Cambridge University Press, 2014). 27T. Ohtani, H. Ogi, Y. Minami and M. Hirao, Journal of Alloys and Compounds. 310,440 (2000). 27
1811.03359	1	1811	2018-11-08T11:14:17	A Leaky-Wave Antenna With Controlled Radiation Using a Bianisotropic Huygens' Metasurface	[ "physics.app-ph" ]	In this paper, a novel concept of a leaky-wave antenna is proposed, based on the use of Huygens' metasurfaces. It consists of a parallel-plate waveguide in which the top plate is replaced by a bianisotropic metasurface of the Omega type. It is shown that there is an exact solution to transform the guided mode into a leaky-mode with arbitrary control of the constant leakage factor and the pointing direction. Although the solution turns out to be periodic, only one Floquet mode is excited and radiates, even for electrically long periods. Thanks to the intrinsic spurious Floquet mode suppression, broadside radiation can be achieved without any degradation. Simulations with idealized reactance sheets verify the concept. Moreover, physical structures compatible with PCB fabrication have been proposed and designed, considering aspects such as the effect of losses. Finally, experimental results of two prototypes are presented and discussed.	physics.app-ph	physics	IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 1 A Leaky-Wave Antenna With Controlled Radiation Using a Bianisotropic Huygens' Metasurface Elena Abdo-S´anchez, Member, IEEE, Michael Chen, Ariel Epstein, Member, IEEE, and George V. Eleftheriades, (DOI: 10.1109/TAP.2018.2878082), c(cid:13) 2018 IEEE* Fellow, IEEE 8 1 0 2 v o N 8 ] h p - p p a . s c i s y h p [ 1 v 9 5 3 3 0 . 1 1 8 1 : v i X r a Abstract -- In this paper, a novel concept of a leaky-wave antenna is proposed, based on the use of Huygens' metasurfaces. It consists of a parallel-plate waveguide in which the top plate is replaced by a bianisotropic metasurface of the Omega type. It is shown that there is an exact solution to transform the guided mode into a leaky-mode with arbitrary control of the constant leakage factor and the pointing direction. Although the solution turns out to be periodic, only one Floquet mode is excited and radiates, even for electrically long periods. Thanks to the intrinsic spurious Floquet mode suppression, broadside radiation can be achieved without any degradation. Simulations with idealized reactance sheets verify the concept. Moreover, physical structures compatible with PCB fabrication have been proposed and designed, considering aspects such as the effect of losses. Finally, experimental results of two prototypes are presented and discussed. Index Terms -- Bianisotropy, broadside radiation, Huygens' principle, field transformation, leaky-wave antenna, metasurface. I. INTRODUCTION Recently, there has been a significant interest in devel- oping low-profile high-directivity antennas that can be eas- ily mounted on platforms, oriented for applications such as satellite communications or automotive radar. Leaky-wave antennas (LWAs) are a promising solution for this purpose. They consist of a traveling-wave structure that leaks power gradually along its length [1]. Unlike corporate-fed arrays, LWAs have simple feeding and, in turn, reduced complexity. They are characterized by a phase constant (which determines the output angle) and a leakage factor (which controls the radiation rate). Many efforts have been made lately to achieve an independent control of these two parameters, such that Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works This project has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie grant agreement No 706334. E. Abdo-S´anchez is with the Departamento de Ingenier´ıa de Comu- nicaciones, E.T.S.I. Telecomunicaci´on, Universidad de M´alaga, Andaluc´ıa Tech, Bulevar Louis Pasteur 35, 29010 M´alaga, Spain (e-mail: ele- [email protected]). M. Chen and G.V. Eleftheriades are with the Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON M5S 2E4 Canada (e-mail: [email protected], [email protected]). A. Epstein is with the Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel (e-mail: [email protected]). versatile radiation patterns can be designed at will [2]. For example, by controlling the leakage factor, high aperture illumination efficiencies can be achieved and, thus, narrower beams for a given antenna length or area. Traditionally, periodic LWAs have suffered from the prob- lem of the open-stopband effect, which deteriorates the ra- diation characteristics when scanning through broadside. For broadside radiation, the phase shift in a period is a multiple of 2π, which causes all the reflections to add in phase at the source. As a consequence, strong frequency variations of the input impedance are observed around this singular frequency and some mismatch is obtained, which degrades the radiation performance (the amount of radiation drops substantially) [1]. In terms of Floquet mode analysis, this phenomenon at broadside is interpreted as coupling between Floquet modes [3]. In the past years, LWAs which overcome this problem have been proposed, starting with the metamaterial-inspired Composite Right-Left Handed (CRLH) LWA, which, unlike other periodic LWAs, radiates from the fundamental harmonic [4]. Recently, techniques based on circuit theory have been proposed to mitigate the open-stopband phenomenon at broad- side in periodic LWAs radiating from the m = −1 spatial harmonic as well [5] -- [8]. The appearance of metasurfaces has allowed advanced manipulation of the electromagnetic field, hence providing significant control over the radiation characteristics of planar surfaces [9]. Some examples are LWAs based on modulated metasurfaces (holographic antennas and modulated metasur- face antennas) in which a surface wave is transformed to a leaky mode by properly modulating an impedance surface [10] -- [13]. Although the modulation of the surface allows meticulous control of the leakage factor, achieving high aper- ture illumination could be challenging [14]. Moreover, some of these LWAs that are fed from an edge experience the open- stopband problem and cannot radiate at broadside [11]. In [15], a pattern synthesis procedure for LWAs was proposed for a structure consisting of a longitudinally-varying impedance sheet on a grounded dielectric whose permittivity also changes along the longitudinal dimension to get the desired propagation constant. In a subsequent work [16], the authors show that control of the amplitude, phase and polarization of leaky-wave modes can be achieved using full-tensor stacked electric sheet impedances. However, broadside radiation is not discussed and designs with physical structures are not provided. Recently, Huygens' metasurfaces have been proposed as a powerful tool for arbitrary wavefront manipulation [17] -- IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 2 [19]. They are based on the equivalence principle, which leads to the statement that, given an incident field, an ar- bitrary aperture field can be achieved by inducing the re- quired electric and (equivalent) magnetic surface currents [20]. These metasurfaces consist of sub-wavelength electrically- and magnetically-polarizable particles that allow the fulfillment of the required boundary conditions to achieve the desired field transformation. In [21], the authors demonstrated that directive radiation to a prescribed angle when excited by a given (arbitrary) source field can be achieved with lossless and passive particles by satisfying two physical conditions: local power conservation across the surface, and local impedance equalization of the fields on both sides of the metasurface. Although this formulation has allowed the design of enhanced antennas [22], its applicability is limited since it does not allow the control of the reflection coefficient, which is mandatory for the design of a LWA with arbitrary choice of the leakage factor. Nevertheless, it has been recently discovered that by in- troducing bianisotropy of the Omega type into the particles used for the metasurface implementation, the local impedance equalization condition is not required anymore to obtain pas- sive and lossless metasurfaces, and local power conservation along the metasurface alone suffices to achieve the desired field transformation [23]. This is possible due to the addi- tional (magnetoelectric) degree of freedom provided by the Bianisotropic Huygens' Metasurfaces (BHMSs) of the Omega type. The term 'Omega' refers here exclusively to the type of bianisotropy (not to the particle shape), which is given to reciprocal bianisotropic particles in which, unlike chiral particles, the induced electric and magnetic currents have the same polarization as the applied electric and magnetic fields, respectively [24]. The fact that only one condition for arbitrary field transformation is required entails more degrees of freedom for setting the desired output field. In this contribution, we propose the use of a BHMS as a top plate of a parallel-plate waveguide to build a LWA with arbitrary control of the radiation parameters and extend the preliminary work of [25]. We derive the complete theoretical formulation to obtain the required metasurface parameters to convert the guided mode into a leaky-mode with certain leakage factor and pointing direction. It is shown, for the first time to the authors' knowledge, that there is an exact solution for the boundary problem to convert the guided mode into a single spatial harmonic by means of a periodic lossless and passive metasurface, with no restriction in the period. Furthermore, we describe the design methodology to convert the theoretical metasurface parameters into a physical structure compatible with PCB fabrication and discuss implementation aspects. Different designs are shown with physical realizations to validate the theory. Finally, the design cycle is closed with the fabrication of two of the designs and the experimental verification of the concept. II. CONCEPT AND THEORY The proposed structure (Fig. 1) is a parallel-plate waveg- uide in which the top plate is replaced by a BHMS of the Fig. 1. waveguide with the top plate being a bianisotropic metasurface. Proposed LWA configuration, which consists of a parallel-plate Omega type. In this way, the BHMS will be the part of the guiding structure leaking power outside. We consider a 2D- configuration (∂/∂x = 0) with the BHMS located at z = 0 and a perfect electric conductor (PEC) plate located at z = −d. The BHMS has a length in the y-coordinate of L, and the excitation of the resulting parallel-plate waveguide is located at y = 0. A transverse electric (TE) polarized field is used as field excitation (Ey = Ez = Hx = 0). Analogously as done for anisotropic metasurfaces [26], the bianisotropic sheet transition conditions for scalar Omega-type bianisotropic metasurfaces [23], [24] relate the transverse field components above (E+ y ) the BHMS x and H + (z → ±0) following y ) and below (E− x and H− 1 1 y − H− x − E− x + E− y + H− x ) = −Zse(H + y ) = −Ysm(E+ 2 (E+ 2 (H + where Zse stands for the electric surface impedance, Ysm for the magnetic surface admittance and Kem for the magneto- electric coupling coefficient. y ) − Kem(E+ x ) + Kem(H + x − E− x ) y − H− y ) (1) z (y) = P + be obtained as a function of (cid:8)E+ According to [23], only one condition must be fulfilled if we want to achieve an arbitrary field transformation with passive and lossless particles, i.e. with Re[Zse] = Re[Ysm] = Im[Kem] = 0. This restriction is termed the local power conservation condition and implies the conservation of the real power along the perpendicular axis at each point of the meta- surface, namely P − From (1), the metasurface parameters Zse, Ysm and Kem can at z → ±0 as follows [23]: y −E− x H−∗ − x −E x )(H + Re[(E+ 2Im 2Im (cid:9). 2Re(cid:8)ExH∗ (cid:9) evaluated (cid:105)(cid:17) (cid:105)(cid:17) z (y), where Pz = 1 y , H− x H +∗ y ] − y −H y )∗] y +H− y − x −E E+ x x +E− x − y −H H + y (cid:105) − KemIm (cid:105) Kem = 1 2 Ysm = −j Zse = −j y −H− y − x −E E+ x x −E− x − y −H H + y (cid:104) H + (cid:104) E+ (cid:104) H + (cid:104) E+ (cid:16) 1 (cid:16) 1 x , E− x , H + y + KemIm . Re[E+ y (2) Therefore, the first step of the theoretical derivation of the problem is to stipulate the fields below and above the metasurface, such that the desirable transformation is achieved, the fields satisfy Maxwell's equations and the relevant bound- ary conditions, and the local power conservation condition is satisfied along the metasurface. Since the metasurface design will force the boundary conditions at z = 0, the only restriction for the field below the BHMS is to vanish at the PEC (z = −d) and meet the wave equation. Therefore, the following electromagnetic field below the metasurface has PECqoutE, H--E, H++zyxz=-dz=0LBHMSIEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 3 been stipulated [25], corresponding to a leaky guided-wave mode: x =Ein(ejk− E− z (z+d) − e−jk− z (z+d))e−jk− y y =2jEin sin(k− z (z + d))e−jk− y y H− y = j ∂E− x k−η− ∂z = −Ein k− = −2Ein k− z z k−η− (ejk− k−η− cos(k− z (z+d) + e−jk− z (z+d))e−jk− y y z (z + d))e−jk− y y . (3a) (3b) (4a) (4b) The desired field for the region above the metasurface is stipulated as a leaky mode, simply as [1] z ze−jk+ k+η+ e−jk+ x = Eoute−jk+ E+ ∂E+ = Eout k+ x ∂z k+η+ y = H + j z y yejξ z ze−jk+ y yejξ , where ξ is a constant phase shift that can be added to the wave as a degree of freedom. In order to allow the structure to radiate, the propagation constants are complex: y = β− − jα−; k− k− y = β+ − jα+; k+ k+ z = β− z = β+ z − jα− z − jα+ z ; k−2 z ; k+2 = k− y = k+ y 2 2 + k− z + k+ z 2 2 , (5) where we assume constant β and α along y. The power profiles just below and above the metasurface can be calculated from (3) and (4), yielding z (y) = −Ein2 z d) − α− P − η−k− Eout2 β+ (cid:0)β− z sinh(2α− η+k+ e−2α+y . z (y) = P + 1 2 z z d)(cid:1) e−2α−y z sin(2β− (6) Then, for the local power conservation condition to be met, the fields must have the same decay rate along y, i.e. α+ = α− = α, where α is defined as the leakage factor. Moreover, the amplitudes of the fields must fulfill the following condition: (cid:115) Eout = Ein 2 η+k+ η−k−β+ z (α− z sin(2β− z d) − β− z sinh(2α− z d)) , (7) which does not impose any additional restriction to the fields. In fact, (3)-(7) demonstrate that there is an exact solution to convert a guided more into a leaky wave in a given direction by means of a lossless and passive metasurface. If we substitute the fields into (2), we can obtain the metasurface parameters {Kem, Zse, Ysm} as a function of the propagation constants of the guided and radiated modes and the waveguide height d. It can be demonstrated that when α is constant, the resulting metasurface constituents {Kem, Zse, Ysm} are periodic, with a period given by p = 2π β+ − β− . (8) It is well known, according to Floquet's theorem [3], that the field scattered off a periodic structure can be expressed in terms of an infinite number of so-called spatial harmonics, whose phase constants are given by 2π p βm = β0 + (9) m , that where m is an integer number indicating the spatial harmonic, and β0 is the fundamental phase constant (β− in our case). One should notice the relation between expressions (8) and (9). In fact, it reveals that the radiation from the metasurface will occur through the first higher-order spatial harmonics, +1 or -1 depending on the chosen solution for the denominator in (8) (β±1 = β+ and β0 = β−). Therefore, it is worth pointing out the period obtained from the 'blind' theoretical derivation for the aimed field transformation coincides with the period provided by the Floquet's theorem. Nevertheless, according to Floquet's theorem, all the spatial harmonics that fulfill the condition βm < k0 would be able to radiate; however, as in our previous works on metasurfaces [21], [23], [27], our derivation guarantees that only one of these modes carries power. This is an interesting feature, since normally LWA designers choose short periods to make sure that there is only one spatial harmonic that fulfills the radiation condition [28]. In contrast, the methodology presented herein allows operation with long periods since the spurious spatial harmonics will not be excited (this can be interesting in terms of scan rates when making the antenna reconfigurable). Hence, it is hereby shown that there is an exact solution for the boundary problem to convert a guided mode into a single spatial harmonic by means of a periodic lossless and passive metasurface with no restriction in the period. A consequence of the fact of having a single spatial harmonic in the field above the metasurface is the intrinsic suppression of the open- stopband effect when radiating at broadside, since there cannot be any coupling between harmonics [3]. III. DESIGN AND IMPLEMENTATION METHODOLOGY The phase constants in the two regions of the space, described in Section II, β+ and β−, can be related to the pointing angle θout and the angle of incidence inside the LWA θin, respectively, by β+ ≈ k+ sin(θout) β− ≈ k− sin(θin) . (10) In order to have control of the radiation pattern of the LWA, the pointing angle, θout, and the leakage factor, α, must be chosen independently. As we have seen in the theoretical derivation, both parameters can indeed be set arbitrarily via the presented methodology. Moreover, the metasurface allows decoupling of the waveguiding and radiation problems (similar to [22]), such that either the period of the structure, p, or θin are degrees of freedom, together with the waveguide height d. Therefore, the desired field transformation can be achieved with practically all degrees of freedom possible. In fact, d can be chosen so that the equivalent parallel-plate waveguide (i.e., with both top and bottom metallic plates) would be under cut- off [25]. However, the leaky waveguide formed by the properly IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 4 designed BHMS will guarantee the propagation of the field as stipulated, as well as the desirable transformation. Once we have set all the parameters of the desired fields, we must calculate the metasurface constituents {Kem, Zse, Ysm}, that, according to the derivation, will be purely real (Kem) and purely imaginary (Zse and Ysm), corresponding to pas- sive and lossless particles [23]. Then, in order to obtain a physical implementation of the metasurface, sampling of these parameters is needed, due to the impossibility of building a continuously varying metasurface. This sampling rate will determine the length of the unit-cells (or meta-atoms) and the required number of unit-cells per period. We have chosen a 6 , a value that has been previously shown sampling rate of λ0 to allow the homogenization approximation (e.g., see [30]). At each point y = y0, a suitable equivalent circuit can be obtained for the corresponding meta-atom by assuming local periodicity (i.e., an infinite array of identical unit-cells). Then, the local properties of the BHMS at each point y = y0 can be approximated by the scattering properties of this infinite periodic array [22]. In this way, each unit-cell can be characterized by a 2x2 impedance matrix [Z] that relates the tangential fields below and above the metasurface [29]: (cid:33) (cid:32) (cid:32) E− x E+ x = Z11 Z12 Z21 Z22 (cid:33)(cid:32) (cid:33) H− y−H + y . (11) By using (1), we can express the impedance matrix in terms of the metasurface parameters [23]: Z11 = Zse + (1 + 2Kem)2 4Ysm Z12 = Z21 = Zse − (1 − 2Kem)(1 + 2Kem) (12) 4Ysm Z22 = Zse + (1 − 2Kem)2 4Ysm . It can be noted that, due to the magneto-electric coupling, the Z-Matrix is not symmetric, unlike for non-bianisotropic Huygens' metasurfaces (Kem = 0). However, in the same way, the equivalent circuit can be implemented by three cascaded impedance sheets and closed-form expressions can be straightforwardly derived [23]. The implementation of a general unit-cell with three cascaded impedance sheets can be observed in Fig. 2. The unit-cell can be seen as a two- port circuit consisting of three parallel reactances connected through transmission lines that represent the dielectrics in the vertical direction [30], [31]. IV. PHYSICAL REALIZATION There are several challenges regarding the physical realiza- tion of the metasurface. First, in the theoretical derivation, lossless particles are used to implement the desired field transformation. However, in practical realizations, losses are inevitable. Typically, the three-layered abstract structure pre- sented in Fig. 2 is implemented via three copper traces defined on a dielectric substrate [31]. The metal forming the trace to realize the desired impedance has losses and so has the substrate over which the trace is printed. Therefore, losses are an undesired effect that will make the theoretical design (a) (b) Fig. 2. (a) Implementation of a BHMS unit-cell with three cascaded reactance sheets. (b) Equivalent circuit of (a). diverge from the real implementation. Furthermore, unlike other structures (e.g., metasurface for anomalous refraction [31], [32]), the LWA application of bianisotropic Huygens' metasurfaces can require unit-cells with a very high reflec- tion coefficient. This means that the transmitted wave is not impinging on the metasurface just once, but there will be multiple reflections inside the waveguide to guide the mode thus increasing the losses. It can be understood that a small propagation angle θin would lead to much higher losses than a larger θin for the same field transformation and type of unit-cells. This is due to the higher number of reflections when the field inside the waveguide is impinging close to normal. Therefore, in order to reduce losses, a large propagation angle of the waveguided mode θin (close to the horizon) is desirable. However, as aforementioned, there is a dependence between θin, θout and the period, p. Fig. 3 shows this dependence for θout=0◦ and θout=30◦. The two solutions correspond to the two possible signs of β+−β− in the denominator of (8) (Sol. 1 corresponds to the harmonic m = −1 and Sol. 2 to m = +1). For instance, for θout=0◦ it is necessary to have a very short period to get large θin. In view of practical discretization constraints, this would correspond to a small number of unit cells per period, which might not be enough to model the required variation of the metasurface parameters within a period. Therefore, a trade-off is imposed between the two requirements (avoiding losses while allowing sufficient period size for discretized realization). Additionally, it is important to bear in mind that, in this work, and unlike other applications of Huygens' metasurfaces, both the phase and the magnitude of the S11, S12 and S22 of each unit-cell (obtained as the two-port represented in Fig. 2 when local periodicity is imposed) must be adjusted for a proper design. Although it was previously shown that any such passive and lossless scattering parameters can be imple- mented using three cascaded impedance sheets [18], [23], [30], these formulations assumed lossless structures; when realistic losses are considered, three degrees of freedom are no longer sufficient for achieving this goal. Therefore, similar to [30], we will employ four layers, so that we have more degrees of freedom to adjust the total scattering parameters of the unit- cells. Having four layers, however, complicates the design and the possible optimization. The three-layer solution shown in Fig. 2 utilizes a transmis- XtopXmidXbotPort 1Port 2esub,msubesub,msubttPort 1XbotZsub,qsubXmidZsub,qsubXtopPort 2tIEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 5 Fig. 5. Simulation to extract the behavior (ABCD matrix) of the middle layers. The walls in the zy-planes are simulated as PEC, while periodic boundary conditions (master and slave) are applied at the walls in the zx-planes. signs of(cid:0)β+ − β−(cid:1) in the denominator of (8) (Sol. 1 corresponds to the Fig. 3. Dependence between the period of the metasurface and the input and output angles, θin and θout. The two solutions correspond to the two possible harmonic m = −1 and Sol.2 to m = +1). Fig. 6. Equivalent model of the unit-cell used to calculate the cascaded response. Fig. 4. Implementation of the unit-cell using dog-bones and four layers. Three dielectric laminates of RO3010 with r=12.94 and thickness t = 50 mil are bonded with the bondply RO2929, with r = 2.94 and thickness tBP = 2 mil. The copper traces are 18 µm thick and 3 mil wide. Fig. 7. Resulting imaginary part of the sheet impedance of the bottom (or top) layer versus the length of the dogbone (Lbot or Ltop), when considering normal incidence and oblique incidence with θin = 48.6◦. sion line (TL) model, assuming negligible near-field interlayer coupling. Thus, to be able to use a similar analytical model with four layers, we should keep the substrate thick enough to avoid significant near-field coupling between the layers. The employed λ0/6 × λ0/9.8 × λ0/3.8 unit-cell geometry is shown in Fig. 4. It consists of three laminates of Rogers RO3010 (r = 12.94 at 20GHz) with thickness t = 50 mil bonded with the 2 mil-thick bondply Rogers RO2929. The bondply is used as a thin film adhesive in high performance, high reliability multi-layer structures, since it has low losses. The electromagnetic properties (including anisotropy) of the RO3010 laminates at 20 GHz (the chosen frequency of opera- tion, with λ0 ≈ 15 mm) have been used in the electromagnetic simulator ANSYS Electromagnetic Suite 16 (HFSS 2015). The copper traces are 18 µm thick and 3 mil wide, and the widths of the dog-bones (Wn) of each layer have been kept constant for all the unit-cells, thus tuning the lengths (Ln) to achieve the desired impedance values. Each layer has been simulated separately (in a similar way as explained in [30]) and the sheet impedance (complex value) as a function of the length of the dog-bone has been extracted. In the case of the middle layers, the presence of the bondply must be taken into account to extract the layer behavior. Then, a simulation of the metallic dogbone surrounded by RO3010 (and extracting the sheet impedance from it by de-embedding) is not appropriate. In order to consider the effect of the dogbone together with the bondply, both surrounded by RO3010 dielectric, we have worked with the ABCD matrix after de-embedding up to the bondply (as illustrated in Fig. 5). The walls in the zy-planes and in the zx- planes are simulated as PEC and periodic boundary conditions, respectively, to simulate an infinite periodic structure. For the bottom and top layer, the widths of the dog-bones were set to Wbot=Wtop=95.3 mil (≈ λ0/6 − 3 mil) and, for the middle layers, Wmid1 = Wmid2 = 40 mil. These values were chosen to allow a wider range of impedance sheets. Then, the cascaded response for all possible combinations is analytically calculated by using the corresponding TL model, shown in Fig. 6. It is customary to consider normal incidence in the design of the meta-atoms. However, when the impinging angle θin is 0246810−100−50050100Normalized Period []in (o) out=0o Sol. 1out=0o Sol. 2out=30o Sol. 1out=30o Sol. 200PECPeriodicBoundariesRO 3010RO 3010DeembeddingyxzPECPort 1ZbotZsub,qsubPort 2Zsub,qsubZtopZsub,qsubABCDmid1ABCDmid210152025303540455055Lbot (mil), Ltop (mil)-10-8-6-4-202Xbot (), Xtop ()Normal IncidenceOblique IncidenceIEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 6 (a) (b) (c) Fig. 8. S-parameter map of achievable values with 3 cascaded dog-bones when losses are limited up to 15%. (a) S11, (b) S12 and (c) S22. (a) (b) (c) Fig. 9. S-parameter map of achievable values with 4 cascaded dog-bones when losses are limited up to 15%. (a) S11, (b) S12 and (c) S22. far from 0◦, the scattering properties of the unit-cell can differ significantly from the case of normal incidence, especially for thicker stack ups. Therefore, if, as previously mentioned, high θin is utilized to decrease losses, then the local design of the unit-cell should consider this phenomenon. Specifically, the equivalent circuit of the dielectrics should consider oblique incidence, since the dielectric layers are significantly thick. For this reason, when calculating the cascaded response, we have used a TL model for the dielectrics considering oblique incidence. Since θout is different from θin, a question might arise about which angle to consider for the design of the unit- cells. As this design is related to the local behavior of the metasurface, we considered θin as the angle of incidence for the unit-cell design, since the resulting θout is a consequence of the entire period and cannot be related easily to a local phenomenon. So, we have applied refraction laws considering the incident angle θin and used this refracted angle in the substrate to calculate the TL parameters in the model of Fig. 6 as follows: Zsub(θr) = Zsub(0) cos(θr) Θsub(θr) = βsub(0) cos(θr)t , (13) where the Zsub(θr) and Θsubr (θr) are the characteristic impedance and electric length of the TL model for the sub- strate when considering oblique incidence, with θr given by the refraction law as asin( sin(θin)), βsub is the phase constant, and t is the substrate thickness. For instance, for 1√ sub θin = 48.6◦ and sub = 12.94 (Design 1 and 2 of Section V), the resulting θr is 12.03◦. Additionally, the simulation of each layer has been made taking into account θin instead of normal incidence in the periodic boundaries. However, insignificant angle dispersion has been found for the impedance values of the dog-bone of a single layer, as illustrated in Fig. 7. Once the cascaded response of all the geometrical combi- nations has been obtained incorporating the individual sheet impedances (complex values) available (Fig. 7) and the ABCD matrices for the middle layers into the TL model of Fig. 6, the choice of the geometrical parameters for the targeted design is done by searching for the minimum deviation between the required and available S-parameters of the unit-cell. A simple algorithm is used for this purpose, calculating separately the differences in magnitude and phase. We establish some maximum deviations for the magnitude and phase of each S- parameter and a maximum percentage of losses (calculated as 1 − S112 − S122) above which the unit-cell geometry is discarded. Since the phases determine the pointing direction, we have introduced the use of weights to give priority to the phase rather than the magnitude. Finally, we choose the geometrical configuration that has the minimum global difference calculated as previously explained to the targeted S-parameters. In order to illustrate the need for using four layers instead of three, Fig. 8 shows the achievable S-parameters of all possible combinations of three layers when the total losses are limited to 15%. Since the parametric sweep is done completely in IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 7 Matlab by using the TL model, after extracting the individual sheet impedances for the bottom and top layers and ABCD matrices for the middle layers in full-wave simulations, it allows exploration of a large number of combinations in a reasonable run time. It can be observed, that there is a significant number of phase/magnitude pairs that cannot be achieved. On the contrary, as illustrated in Fig. 9, if we use four layers, the range of values of magnitude and phase of the S-parameters for a limited amount of losses is much wider. V. DESIGNS AND SIMULATION RESULTS In order to prove the concept, we have carried out three different designs. To show that the leakage factor α and the pointing direction θout can be arbitrarily set, we have chosen two designs with the same pointing direction and different α values and another one with a different pointing direction. Since the broadside case is controversial in LWAs [1], [4], we have chosen this direction for two of the three designs to ad- ditionally prove that in the proposed concept there is no open- stopband effect at broadside. The three implementations are designed to radiate around 90 % of the power, so the lengths are set according to the leakage factors. The periods have been chosen so that the propagation angle of the waveguide mode, θin, is high to reduce the losses, as previously argued in Section IV. For the three cases, the waveguide height has been arbitrarily set to d = 0.75 λ0. Table I summarizes the design parameters of the three designs. It could be mentioned that the beam pointing angle of the non-broadside design has arbitrarily been chosen to be backwards; however, a design for a forward angle would not entail any additional challenges (a design example of an extreme forward angle can be found in [25]). As can be seen in Table I, the periods are rather large, so according to the Floquet's theorem, for each of the de- signs, there would be more spatial harmonics able to radiate. For instance, for Designs 1 and 2, the fundamental spatial harmonic (θ = 48.6◦) and the harmonic −2 (θ = −48.6◦) would be within the radiation cone. However, it is expected, as previously argued, that these modes will not be excited and, then, a single beam, corresponding to m = −1, will appear in the radiation pattern. As an example, Fig. 10 shows the comparison of the targeted S-parameters of the unit-cells of Design 1 (broadside, α = 0.013k0) derived from theory with those obtained from simulation of the physical (printed-circuit-board-compatible) realization of the dog-bones (assuming local periodicity) af- ter designing them following the aforementioned synthesis procedure. One should notice that this parameter specifica- tion indicates that bianisotropic meta-atoms are required to implement the desirable LWA, as the reflection phase from the bottom (S11) and top (S22) faces of the metasurface should be different. This is crucial to achieve the "perfect" performance with no spurious modes. Since the theoretical values correspond to a lossless two-port, it is not possible to obtain the exact values of the S-parameters (especially, the magnitudes). Fig. 11 shows the achieved losses for each unit- cell assuming local periodicity, which were limited to 15 % in the synthesis procedure. SUMMARY OF THE DESIGN PARAMETERS FOR THE THREE DESIGN TABLE I EXAMPLES. Parameter θout [◦] θin [◦] p [λ0] L [λ0] α [k0] d [λ0] Design 1 0 48.6 8/6 15 0.013 0.75 Design 2 0 48.6 8/6 10 0.02 0.75 Design 3 -20 41.1 1 10 0.02 0.75 Tables II, III and IV show the resulting lengths of the dog- bones for each unit-cell of each design, to be used in the final layout of the metasurfaces. GEOMETRICAL PARAMETERS OF DESIGN 1 TABLE II #Cell Lbot [mil] Lmid1 [mil] Lmid2 [mil] Ltop [mil] 1 25 9 40.5 9.5 2 18 16 54.5 55 3 54 5.5 54.5 34.5 4 24.5 15 54.5 31 5 14 54.5 46.5 31 6 7 19.5 25.5 54.5 16.5 49.5 41.5 13 28 GEOMETRICAL PARAMETERS OF DESIGN 2 TABLE III #Cell Lbot [mil] Lmid1 [mil] Lmid2 [mil] Ltop [mil] 1 55 5 32 10.5 2 50.5 54.5 30.5 11.5 3 26.5 52.5 9 12 4 27.5 5.5 51.5 31 5 33 54.5 49 31 6 20 36 38.5 18 7 17.5 30.5 40 15 8 9 5 9 40.5 10.5 40.5 8 5 9 GEOMETRICAL PARAMETERS OF DESIGN 3 TABLE IV #Cell Lbot [mil] Lmid1 [mil] Lmid2 [mil] Ltop [mil] 1 5 47 27.5 15.5 2 5 48 54.5 27.5 3 17 42 41 11.5 4 15.5 43 32.5 17 5 16.5 30 10.5 17.5 6 5 47.5 30.5 17.5 In order to prove the concept, two different types of simula- tions have been carried out to be compared with the theoretical performance (3)-(7), both with the electromagnetic simulator HFSS. In a first stage, we want to verify that the macroscopic design (2) is correct, independently of the geometry used later on for the physical implementation of the metasurface (microscopic design). For this purpose, impedance boundary conditions have been used in HFSS in order to mimic the reac- tance sheets needed to implement the metasurface according to the design synthesis shown in Fig. 2. The simulation schematic for this case can be observed in Fig. 12. We have used a small substrate thickness (2 mil) for this idealized simulation, and the impedance sheets used were completely lossless. The other type of simulation is the one in which the microscopic design for the metasurface is taken into account, so the unit-cells are physically implemented with the dog- bones as prescribed by Tables II, III and IV; copper and dielectric losses are considered in this realistic simulation. In both cases, PEC walls are used as periodic boundaries taking advantage of the TE configuration. IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 8 Fig. 10. S-parameters of each unit-cell inside the period for Design 1: targeted parameters from the theoretical derivation vs. obtained with the chosen geometry in simulations assuming local periodicity. Fig. 11. Simulated total losses of each unit-cell inside the period of Design 1 assuming local periodicity. Fig. 13 shows the plot of the magnitude of the electric field along the zy-plane, obtained from the analytical derivation and from the realistic simulation for the three design examples. Excellent agreement between both field distributions for the three examples can be observed. As designed, Designs 1 and 2 have the same input and output angles (in fact at broadside) but differ in the leakage factor, which is noticeable in the different rates of the field attenuation along the waveguide but the same mode. In contrast, Design 3 has different field patterns both inside and out of the waveguide, as expected from Table I. Unlike the analytical solution, the physical implementation of the metasurface has a non-negligible thickness which leads to field interactions between the different layers forming the metasurface, observable in the field snapshots. Fig. 14 plots the directivity radiation patterns of the three designs. Since the proposed antenna is only directive in the zy-plane, we represent the 2D directivity as Fig. 12. Schematic of simulation when using impedance sheets for the metasurface ('idealized simulation'). (cid:82) π 2πU (θ, φ = π/2) 0 U (θ, φ = π/2) dθ D2D = , (14) where U (θ, φ) stands for the radiation intensity. The excellent agreement between the idealized simulation and the theoretical prediction proves the concept and shows the discretization of the continuous metasurface parameters has a negligible effect. In addition, the good agreement with the realistic simulation demonstrates the viability to implement the proposed concept using (realistically lossy) dog-bones on a commercially available substrate. The differences between the ideal metasurface and the actual implementation lead to the appearance of small side lobes corresponding to the fundamental and the −2 spatial harmonics of the waveguide mode (which in the ideal case are completely suppressed) and 0510# Unit-cell00.51S11Simulation0510# Unit-cell00.51S120510# Unit-cell00.51S220510# Unit-cell-180-90090180phase(S11) (deg)GoalSimulation0510# Unit-cell-18090090180phase(S12) (deg)0510# Unit-cell-180-90090180phase(S22) (deg)Goal12345678# Unit-cell23456789101112Losses (%)PECdWAVEPORTLdpZYXIEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 9 (a) (d) (b) (e) (c) (f) Fig. 13. Field distributions Re(Ex(y, z) (V/m) for input power of 1W over a waveport area λ0/6 x λ0/9.5 x 0.75λ0: (a)-(c) theoretical prediction and (d)-(f) full-wave realistic simulation for Design 1 (a and d), Design 2 (b and e) and Design 3 (c and f). a small shift of the pointing direction. Since, in the idealized simulation, there is no noticeable deterioration with respect to the expected radiation pattern from theory, the effect of the discretization of the ideal continuous metasurface does not seem to be an issue. However, the ideal behavior is certainly affected by the discrepancies between the synthesized-unit- cell S-parameters and the targeted ones when using realistic unit-cells, since these make the theoretical boundary condition not to be perfectly fulfilled. To the extent that unit-cells with a response closer to the ideal one can be implemented (by using other substrates, geometries, etc.), these deviations can be reduced. Regardless, even with the found discrepancies, the overall antenna performance is well reproduced. In order to show that broadside radiation can be achieved avoiding the open-stopband effect, Fig. 15 shows the reflection coefficient from the full-wave simulations of the structure with the metasurface implemented with dog-bones for Design 1 and 2. It can be observed that there is neither mismatching nor strong frequency variations around 20 GHz (design frequency for broadside). The behavior is rather smooth. Therefore, the antenna is able to radiate at broadside without any degradation. Finally, Table V summarizes the performance obtained from theory and the two types of simulations for the three designs. VI. EXPERIMENTAL VALIDATION Designs 1 and 3 have been manufactured and measured for experimental validation. As in the realistic full-wave simula- tions, three 50 mil-thick laminates of RO3010 were used (four trace layers), bonded by Rogers 2 mil-thick 2929 bondply. The metasurface fabrication was carried out by Candor Industries SUMMARY OF THE PARAMETER PERFORMANCE OF THE THREE DESIGNS. TABLE V Design Design 1 (Theory) Design 1 (Ideal. Sim.) Design 1 (Real. Sim.) Design 2 (Theory) Design 2 (Ideal. Sim.) Design 2 (Real. Sim.) Design 3 (Theory) Design 3 (Ideal. Sim.) Design 3 (Real. Sim.) θout Dmax (◦) (dBi) 19.3 0 19.4 0.1 18.7 -0.7 17.6 0 17.3 -0.2 0.6 16.7 17.3 -20 18.1 -20 -18.6 16.8 ηap (%) 90.6 92.9 79.3 90.8 93.8 74.3 85.5 68.0 76.6 ηrad (%) 91.3 86.2 66.4 91.9 93.8 78.5 91.9 94.5 68.0 -15.7 - - - - - - SLL Losses (dBi) (%) - - 29.5 - - - - -14.3 18.3 -16.5 28.3 Inc. Several replicas of the same design were realized. The waveguide was fabricated on a 4 mm Aluminium block at the University of Toronto and was manufactured in two pieces (split along the longitudinal axis) to facilitate the fabrica- tion using computerized numerical control (CNC) technology. Then, the structure was assembled using metallic screws, as done in [22]. To feed the structure, a SMA connector with an exposed pin along the x-direction was used as a current source to excite the TE field. The whole structure with the connector was simulated in HFSS to choose the best distance to the back short in terms of matching at the design frequency (5.4 mm). Fig. 16 shows a photograph of the fabricated LWA corresponding to Design 1. The radiation patterns in the yz-plane were measured in the anechoic chamber of the University of Toronto in the frequency range from 18 to 22 GHz. Some absorbers were attached at the end of the metasurface to avoid radiation from IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 10 (a) (b) (c) Fig. 14. 2D directivity radiation patterns for the yz-plane obtained from the theoretical derivation, full-wave simulation with reactance sheets('idealized simulation') and full-wave simulation with the metasurface implemented with dog-bones. (a) Design 1, (b) Design 2 and (c) Design 3. Fig. 15. Magnitude of the S11 obtained from full-wave simulation with the metasurface implemented with dog-bones of Design 1 and 2. Fig. 17. Measured maximum 2D directivity of two replicas of Design 1 over frequency. Fig. 16. Photograph of the fabricated LWA (Design 1). the end. Fig. 17 shows the maximum 2D directivity as a function of frequency for two replicas of the metasurface of Design 1, implying reasonable repeatability. It can be observed that the maximum directivity (which corresponds to the best mitigation of spurious Floquet modes) is found around 21.5 GHz, while the design frequency, as recalled, was 20 GHz. Therefore, there is a frequency shift in the expected behavior of the metasurface, which is attributed to fabrication tolerances and uncertainties in the actual value of the permittivity, as well as in the anisotropy of the dielectric. In order to verify that the frequency deviation can be attributed to deviations of the substrate permittivity from the nominal value provided by the manufacturer, Fig. 18 shows the simulated 2D directivity vs. frequency when using the manufacturer provided value (solid blue line) and when considering a 15% decrease in this value (dashed red line). It can be seen that a decrease in the permittivity leads to a shift of the frequency at which the maximum directivity is achieved. In particular, Fig. 18 indicates that when considering 15% Fig. 18. Simulated 2D directivity of Design 1 over frequency with the permittivity value provided by the manufacturer and for a decrease in the permittivity by 15%. permittivity deviation, the maximum directivity is achieved at 21.5 GHz, coinciding with the peak performance point recorded in measurements (Fig. 17). Thus, it will be reasonable to conclude that the actual substrate permittivity is smaller by about 15% from the value used for the design; from now on, we would use simulations with this modified value as the theoretical reference for the LWA performance. Assuming that the mode inside the waveguide is not affected much by the deviation in the permittivity of the metasurface substrate (so, θin is the one we designed), the pointing angle will be determined by the periodicity of the structure, given by (8). Subsequently, the relation between the frequency with -1001020 dB90o60o30o0o-30o-60o-90oTheoryIdealized SimulationRealistic Simulation-1001020 dB90o60o30o0o-30o-60o-90oTheoryIdealized SimulationRealistic Simulation-1001020 dB90o60o30o0o-30o-60o-90oTheoryIdealized SimulationRealistic Simulation19.519.619.719.819.92020.120.220.320.420.5Frequency (GHz)-35-30-25-20-15-10-5S11 (dB)Design 1Design 2xyz1818.51919.52020.52121.522Frequency (GHz)910111213141516171819Dmax(dB)Design 1 (Prototype a)Design 1 (Prototype b)1919.52020.52121.522Frequency (GHz)101214161820Dmax(dB)Design 1 (Sim. Error)er=15%Design 1 (Sim.)IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 11 Fig. 19. Pointing angle over frequency obtained from full-wave electromag- netic simulations of Design 1 with the permittivity value provided by the manufacturer and for a decrease in the permittivity by 15%. the pointing angle is expected to be the same as in the design. Therefore, the frequency shift in the performance will lead to a pointing angle different from the designed one (broadside). Fig. 19 shows the pointing angle obtained from simulations of the designed case and the one with actual permittivity. It can be observed that the pointing angle practically does not change for the two cases, as assumed. The jumps at certain frequencies are due to the high level of the spurious Floquet harmonics (minimum values of directivities in Fig. 18) which makes the side lobe become the main one. With the assumed deviation in the permittivity, the boundary condition for the transformation of the guided field into the leaky-mode with mitigation of other Floquet modes is achieved at 21.5 GHz, which, according to simulations, corresponds to around 5◦. Fig. 20 shows the directivity pattern in the zy-plane for the prototype 'a' of Design 1 at 21.5 GHz for both the measurement and the simulated directivity with the actual permittivity. It is shown that the mitigation of spurious Floquet modes is achieved with a side lobe level (SLL) of more than 14 dB and 2D maximum directivity of 18.1 dBi at 7◦, with very good agreement with the simulation. Therefore, the initial discrepancies with the simulated design can be attributed to a deviation in the real permittivity with respect to the value provided by the manufacturer of the substrate. This can be expected since Rogers itself has proven that, besides the dielectric composition, there are other factors which influence the apparent permittivity of a substrate [33] and the value they provide is valid under certain construction (i.e., microstrip) and frequency range. In any case, since spurious Floquet mode suppression has been achieved, the experiment verifies the concept. Moreover, in terms of directivity (18.1 dBi, which corresponds to an aperture efficiency of 68.5%), the prototype results are in good agreement with the values shown in Table V. Fig. 21 shows the measured S11 for the prototype 'a' of Design 1 together with the value obtained from the full-wave simulation when considering again the permittivity deviation of 15% and the effect of the connector. Although the overall level of the S11 is several dB lower in the measurement than in the simulation, the behavior is rather similar over most of the analysed band. The discrepancies can be at- Fig. 20. Measured directivity pattern of Design 1 at 21.5 GHz and the simulated directivity at 21.5 GHz considering a permittivity deviation of 15%. Fig. 21. Measured and simulated magnitude of the S11 over frequency of Design 1. The simulation considers the connector and the permittivity deviation of 15%. tributed to fabrication tolerances, uncertainties in the actual connector dimensions and prototype assembly. Nevertheless, it is shown that the structure is well matched at the 'shifted' design frequency (21.5 GHz) both in the simulation and in the fabricated prototype. Additionally, the almost flat return loss behavior qualitatively agrees with the simulation of Fig. 15, corroborating the smooth performance around the design frequency due to the excitation of only the radiating (m = −1) spatial harmonic. In the same way as done for Design 1, it can be shown that for the manufactured Design 3 the frequency at which the Floquet mode suppression is achieved has been shifted to 22 GHz. In order to check again if this shift is due to a deviation in the permittivity value of the substrate, Fig. 22 shows the directivity pattern in the zy-plane for a prototype of Design 3 at 22 GHz for both the measurement and the simulation when considering the same deviation in the permittivity of 15%. It can be observed that there is good agreement between the measurement and the simulation, thus corroborating the hypothesis. The small pointing deviation can be due to some minor miscalibration when performing the measurements. Additionally, it can be noticed that at 22 GHz, 1919.52020.52121.522Frequency (GHz)-60-50-40-30-20-10010Dmax(dB)Design 1 (Sim.)Design 1 (Sim. Error=15%)er-10-1000101020 dB20 dB90o60o30o0o-30o-60o-90o-120o-150o180o150o120o21.5 GHz (Meas.)21.5 GHz (Sim. Errorer=15%)2121.221.421.621.822Frequency (GHz)-30-20-100S11 (dB)MeasurementSimulationIEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 12 attenuation constants can be achieved. Moreover, broadside radiation has been shown without any degradation due to the open-stopband effect. Since the suppression of the spurious Floquet modes has also been achieved, the concept has been corroborated. Finally, the design cycle has been closed with the exper- imental verification of two prototypes. Deviations have been found in the frequency at which the Floquet mode suppression is achieved with respect to the design. It has been shown that this discrepancy is likely due to a deviation in the permittivity value with respect to the nominal value provided by the dielectric manufacturer. Nevertheless, it has been proven that a single beam with directivity close to the one obtained from simulations is achieved, which proves the control on the leakage factor and the spurious Floquet mode suppression even with structures with electrically long periods. It should be highlighted that our design relies completely on an analytical formulation of the fields, without any approxima- tion. Therefore, it is expected that this work paves the way to implement LWAs with completely arbitrary radiation patterns. REFERENCES [1] A. A. Oliner and D. R. Jackson, "Leaky-wave antennas", in J. L. Volakis (ed.), Antenna Eng. Handbook, Fourth Edition, New York : McGraw- Hill, c2007, Ch. 11. [2] A. J. Martinez-Ros, J. L. Gomez-Tornero and G. Goussetis, "Planar leaky-wave antenna with flexible control of the complex propagation constant," in IEEE Trans. Antennas Propagat., vol. 60, no. 3, pp. 1625 -- 1630, March 2012. [3] A. Hessel, "Travelling-wave antennas," in Antenna Theory, R. E. Collin and F. J. Zucker, Eds. New York: McGraw-Hill, 1969, ch. 19. [4] L. Liu, C. Caloz, and T. Itoh, "Dominant mode leaky-wave antenna with backfire-to-endfire scanning capability", Electron. Lett., vol. 38, pp. 1414 -- 1416, Nov. 2002. [5] S. Paulotto, P. Baccarelli, F. Frezza, D.R. Jackson, "A novel technique for open-stopband suppression in 1-D periodic printed leaky-wave antennas," IEEE Trans. Antennas Propagat., vol. 57, no. 7, pp. 1894 -- 1906, Jul. 2009. [6] S. Otto, A. Rennings, K. Solbach, C. Caloz, "Transmission line modeling and asymptotic formulas for periodic leaky-wave antennas scanning through broadside," IEEE Trans. Antennas Propagat. , vol. 59, no. 10, pp. 3695 -- 3709, Oct. 2011. [7] S. Otto, A. Al-Bassam, A. Rennings, K. Solbach, C. Caloz, "Transver- sal asymmetry in periodic leaky-Wave antennas for bloch impedance and radiation efficiency equalization through broadside," IEEE Trans. Antennas Propagat. , vol. 62, no. 10, pp. 5037 -- 5054, Oct. 2014. [8] E. Abdo-S´anchez, T.M. Mart´ın-Guerrero, J. Esteban, and C. Camacho- Penalosa, "A short dual-band planar leaky-wave antenna with broadside effect mitigation," in IET Microwaves, Antennas & Propagation, vol. 10, no. 5, pp. 574 -- 578, Apr. 2016. [9] C. L. Holloway, E. F. Kuester, J. A. Gordon, J. O'Hara, J. Booth and D. R. Smith, "An overview of the theory and applications of metasurfaces: The two-dimensional equivalents of metamaterials," in IEEE Antennas and Propagation Magazine, vol. 54, no. 2, pp. 10 -- 35, Apr. 2012. [10] B. H. Fong, J. S. Colburn, J. J. Ottusch, J. L. Visher and D. F. Sieven- piper, "Scalar and tensor holographic artificial impedance surfaces," in IEEE Trans. Antennas Propagat., vol. 58, no. 10, pp. 3212 -- 3221, Oct. 2010. [11] A. M. Patel and A. Grbic, "A printed leaky-wave antenna based on a sinusoidally-modulated reactance surface," in IEEE Trans. Antennas Propagat., vol. 59, no. 6, pp. 2087 -- 2096, Jun. 2011. [12] G. Minatti, F. Caminita, M. Casaletti and S. Maci, "Spiral leaky- wave antennas based on modulated surface impedance," in IEEE Trans. Antennas Propagat., vol. 59, no. 12, pp. 4436 -- 4444, Dec. 2011. [13] G. Minatti et al., "Modulated metasurface antennas for space: synthesis, analysis and realizations," in IEEE Trans. Antennas Propagat., vol. 63, no. 4, pp. 1288 -- 1300, Apr. 2015. Fig. 22. Measured directivity pattern of Design 3 at 22 GHz and the simulated directivity at 22 GHz considering a permittivity deviation of 15%. the spurious Floquet modes are again mitigated (SLL lower than 10 dBi, with maximum 2D directivity of 17.1 dBi) and there is a single beam corresponding to the m = −1 harmonic. Due to frequency scanning, the pointing beam is not at -20◦ but the shift is in the expected direction, as for the prototype of Design 1. As expected, the pointing beam is backwards with respect to the one obtained for the prototype of Design 1, thus showing that other pointing directions can be achieved. Again, very good agreement in terms of directivity is obtained with the values shown in Table V. VII. CONCLUSION A novel concept of LWAs based on Omega-type bian- isotropic Huygens' metasurfaces has been presented. The theoretical derivation has shown that there is an exact solution to convert a guided mode into a single radiating leaky mode by means of a periodic metasurface with arbitrary control of the leakage factor and the pointing beam direction. Although the solution for the metasurface is periodic, there is only one Floquet mode excited and radiating, even if the period is electrically large. Then, the traditional problem of the open-stopband effect at broadside due to coupling of Floquet harmonics does not appear. The theory has been verified with three different designs, two of them radiating at broadside with different leakage factors and a third one with a different pointing angle. Two types of simulations have been performed. First, idealized impedance sheets have been used in the simulator to imple- ment the metasurface. In this way, the properties extracted from theory, independently of the microscopic design of the metasurface, have been checked. In a further stage, we have proposed physical structures for the three discussed designs, by following an implementation methodology in which several aspects of the physical realization have been discussed, such as the effect of the losses. Very good agreement has been verified between simulations and theoretical predictions. Furthermore, it has been illustrated that independent control of the phase and -10-1000101020 dB22 GHz (Meas.)22 GHz (Sim. Errorer=15%)20 dB90o60o30o0o-30o-60o-90o-120o-150o180o150o120oIEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 13 [14] M. Faenzi, F. Caminita, E. Martini, P. De Vita, G. Minatti, M. Sabbadini, and S. Maci, "Realization and measurement of broadside beam modulated metasurface antennas," in IEEE Antennas and Wireless Propagation Letters, vol. 15, no. , pp. 610 -- 613, 2016. [15] B. B. Tierney and A. Grbic, "Arbitrary beam shaping using 1-D impedance surfaces supporting leaky waves," in IEEE Trans. Antennas Propagat., vol. 63, no. 6, pp. 2439 -- 2448, Jun. 2015. [16] B. B. Tierney and A. Grbic, "Controlling leaky waves with 1-D cascaded metasurfaces," in IEEE Trans. Antennas Propagat., vol. 66, no. 4, pp. 2143-2146, April 2018. [17] C. Pfeiffer and A. Grbic, "Metamaterial Huygens surfaces: tailoring wave fronts with reflectionless sheets," Phys. Rev. Lett., vol. 110, no. 19, pp. 197401, May 2013. [18] F. Monticone, N. M. Estakhri, and A. Al`u, "Full control of nanoscale optical transmission with a composite metascreen," Phys. Rev. Lett., vol. 110, no. 20, p. 203903, May 2013. [19] M. Selvanayagam and G. V. Eleftheriades, "Discontinuous electromag- netic fields using orthogonal electric and magnetic currents for wavefront manipulation," Opt. Express, vol. 21, no. 12, pp. 14 409 -- 14 429, Jun. 2013. [20] C. Balanis, "Aperture Antennas", Antenna Theory: Analysis and Design, Ch. 12, John Wiley & Sons, Inc., 2005. [21] A. Epstein and G. V. Eleftheriades, "Passive lossless Huygens meta- surfaces for conversion of arbitrary source field to directive radiation," IEEE Trans. Antennas Propag., vol. 62, no. 11, pp. 5680 -- 5695, Nov. 2014. [22] A. Epstein, J. P. S. Wong, G. V. Eleftheriades, "Cavity-excited Huygens metasurface antennas for near-unity aperture illumination efficiency from arbitrarily large apertures," Nature Commun., vol. 7, Jan. 2016. [23] A. Epstein and G. V. Eleftheriades, "Arbitrary power-conserving field transformations with passive lossless Omega-type bianisotropic metasur- faces," IEEE Trans. Antennas Propag., vol. 64, no. 9, pp. 3880 -- 3895, Sept. 2016. [24] Y. Ra'di and S. A. Tretyakov, "Balanced and optimal bianisotropic particles: Maximizing power extracted from electromagnetic fields," New J. Phys., vol. 15, no. 5, p. 053008, 2013. [25] E. Abdo-S´anchez, A. Epstein and G. V. Eleftheriades, "Bianisotropic Huygens' metasurface leaky-wave antenna with flexible design pa- rameters," 11th European Conference on Antennas and Propagation (EUCAP), Paris, 2017, pp. 3315 -- 3318. [26] E. Kuester, M. Mohamed, M. Piket-May, and C. Holloway, "Averaged transition conditions for electromagnetic fields at a metafilm," IEEE Trans. Antennas Propag., vol. 51, no. 10, pp. 2641 -- 2651, Oct. 2003. [27] A. Epstein and G. V. Eleftheriades, "Synthesis of passive lossless metasurfaces using auxiliary fields for reflectionless beam splitting and perfect reflection," Phys. Rev. Lett. vol. 117, pp. 256103, Dec. 2016. [28] N. Yang, C. Caloz and K. Wu, "Full-space scanning periodic phase- leaky-wave antenna," in IEEE Transactions on Microwave reversal Theory and Techniques, vol. 58, no. 10, pp. 2619 -- 2632, Oct. 2010. [29] M. Selvanayagam and G. V. Eleftheriades, "Circuit modeling of Huygens surfaces," IEEE Antennas Wireless Propag. Lett., vol. 12, no. 12, pp. 1642 -- 1645, 2013. [30] C. Pfeiffer and A. Grbic, "Bianisotropic metasurfaces for optimal polarization control: analysis and synthesis," Physical Review Applied 2, vol. 2, no. 4, 04001, 2014. [31] M. Chen, E. Abdo-S´anchez, A. Epstein, and G. V. Eleftheriades, "The- ory, design, and experimental verification of a reflectionless bianisotropic Huygens' metasurface for wide-angle refraction," Physical Review B, vol. 97, 125433, 2018. [32] G. Lavigne, K. Achouri, V. Asadchy, S. Tretyakov, and C. Caloz, "Susceptibility derivation and experimental demonstration of refract- ing metasurfaces without spurious diffraction," IEEE Trans. Antennas Propag., vol. 66, no. 3, pp. 1321 -- 1330, 2018. [33] J. Coonrod, "Understanding the variables of dielectric constant for PCB materials used at microwave frequencies," 41st European Microwave Conference, Manchester, 2011, pp. 938 -- 944. Elena Abdo-S´anchez (M'17) received the M.Sc. and Ph.D. degrees in Telecommunication Engineer- ing in 2010 and 2015, respectively, from the Univer- sidad de M´alaga, Spain. In 2009, she was a granted student with the Institute of Communications and Navigation at the German Aerospace Center (DLR) in Munich, Germany. In 2010, she joined the Depart- ment of Communication Engineering at the Univer- sidad de M´alaga as a Research Assistant. From April to July 2013, she was a visiting Ph.D. student at the Antennas and Applied Electromagnetics Laboratory of the University of Birmingham, UK. From May 2016 to May 2017, she was a Marie Sklodowska-Curie postdoctoral fellow at the Electromagnetics Group of the University of Toronto, Canada. She is currently a postdoctoral fellow at the University of M´alaga. Her research interests focus on the electromagnetic analysis and design of planar antennas and the application of metasurfaces to the implementation of novel antennas. Dr. Abdo-S´anchez was recipient of both a Junta de Andaluc´ıa Scholarship (2012-2015) and a Marie Sklodowska-Curie fellowship (2016-2018). Michael Chen (S'14) received the B.A.Sc. degree and M.A.Sc. degree in electrical engineering from the University of Toronto, Toronto, ON, Canada, in 2012 and 2015, respectively, and is currently working towards the Ph.D. degree at the University of Toronto. His research interests include antenna design, frequency-selective surfaces, metasurfaces, periodic structures, and radar systems. Ariel Epstein (S'12-M'14) received the B.A. de- gree in computer science in 2000 from the Open University of Israel, Raanana, both the B.A. degree in physics and the B.Sc. degree in electrical engi- neering in 2003, and the Ph.D. degree in electrical engineering in 2013, all from the Technion - Israel Institute of Technology, Haifa, Israel. From 2013 to 2016, he was a Lyon Sachs Postdoctoral Fellow with the Department of Electrical and Computer Engineering, University of Toronto, Toronto, ON, Canada. He is currently an Assistant Professor with the Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion - Israel Institute of Technology, Haifa, Israel, where he is leading the Modern Electromagnetic Theory and Applications (META) research group. His current research interests include utilization of electromagnetic theory, with emphasis on analytical techniques, for the development of novel metasurface-based antennas and microwave devices, and investigation of new physical effects. Dr. Epstein was a recipient of the Young Scientist Best Paper Award in the URSI Commission B International Symposium on Electromagnetic Theory (EMTS2013), held in Hiroshima, Japan, in 2013, as well as the Best Poster Award at the 11th International Symposium on Functional π-electron Systems (Fπ-11), held in Arcachon, France, in June 2013. He is currently an Associate Editor for the IEEE Transactions on Antennas and Propagation. IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION 14 George V. Eleftheriades (S86M88SM02F06) earned the M.S.E.E. and Ph.D. degrees in electrical engineering from the University of Michigan, Ann Arbor, MI, USA, in 1989 and 1993, respectively. From 1994 to 1997, he was with the Swiss Federal Institute of Technology, Lausanne, Switzerland. Currently, he is a Professor in the Department of Electrical and Computer Engineering at the University of Toronto, ON, Canada, where he the Canada Research/Velma M. Rogers holds Graham Chair in Nano- and Micro-Structured Electromagnetic Materials. He is a recognized international authority and pioneer in the area of metamaterials. These are man-made materials which have electromagnetic properties not found in nature. He introduced a method for synthesizing metamaterials using loaded transmission lines. Together with his graduate students, he provided the first experimental evidence of imaging beyond the diffraction limit and pioneered several novel antennas and microwave components using these transmission-line based metamaterials. His research has impacted the field by demonstrating the unique electromagnetic properties of metamaterials; used in lenses, antennas, and other microwave and optical components to drive innovation in fields such as wireless and satellite communications, defence, medical imaging, microscopy, and automotive radar. Presently, he is leading a group of graduate students and researchers in the areas of electromagnetic and optical metamaterials, and metasurfaces, antennas and components for broadband wireless communications, novel antenna beam-steering techniques, far-field super-resolution imaging, radars, plasmonic and nanoscale optical components, and fundamental electromagnetic theory. served as an Associate Editor the IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION (AP). He also served as a member of the IEEE AP-Society administrative committee (AdCom) from 2007 to 2012 and was an IEEE AP-S Distinguished Lecturer from 2004 to 2009. He served as the General Chair of the 2010 IEEE International Symposium on Antennas and Propagation held in Toronto, ON, Canada. Papers that he co-authored have received numerous awards such as the 2009 Best Paper Award from the IEEE MICROWAVE AND WIRELESS PROPAGATION LETTERS, twice the R. W. P. King Best Paper Award from the IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION (2008 and 2012), and the 2014 Piergiorgio Uslenghi Best Paper Award from the IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS. He received the Ontario Premiers Research Excellence Award and the University of Torontos Gordon Slemon Award, both in 2001. In 2004 he received an E.W.R. Steacie Fellowship from the Natural Sciences and Engineering Research Council of Canada. In 2009, he was elected a Fellow of the Royal Society of Canada. He is the recipient of the 2008 IEEE Kiyo Tomiyasu Technical Field Award and the 2015 IEEE John Kraus Antenna Award. In 2018 he received the Research Leader Award from the Faculty of Applied Science and Engineering of the University of Toronto. Prof. Eleftheriades for
1710.08309	1	1710	2017-10-02T14:36:43	Characterization of damage mechanisms in CVI-SiC/SiC composite tubes by X-ray tomography	[ "physics.app-ph" ]	SiC/SiC composite tubes are studied as materials for nuclear fuel cladding. A thorough understanding on the mechanisms of damage to this material requires both an experimental and a numerical study. In situ tensile tests were performed under X-ray tomography at the SOLEIL synchrotron. Post processing methods have been developed to analyze the microstructure, measure the deformation and characterize qualitatively and quantitatively the damage mechanisms inside the material. The tomographic images provide 3D descriptions on the microstructure, which are direct input data for the numerical simulation based on FFT. The use of real microstructures makes it possible to combine the simulation results directly with the experimental observations.	physics.app-ph	physics	Comptes Rendus des JNC 20 – Ecole des Ponts ParisTech – 28-30 juin 2017 Caractérisation des mécanismes d'endommagement des tubes CVI-SiC/SiC par tomographie X Characterization of damage mechanisms in CVI-SiC/SiC composite tubes by X-ray tomography Yang Chen1,2, Lionel Gélébart1, Camille Chateau2, Michel Bornert2, Andrew King3, Patrick Aimediue2 et Cédric Sauder1 1 : DEN-Service de Recherches Métallurgiques Appliquées CEA, Université Paris-Saclay CEA Saclay, F- 91191 Gif-sur-Yvette e-mail : [email protected]; [email protected]; [email protected] 2 : Laboratoire Navier (UMR 8205) CNRS, ENPC, IFSTTAR, Université Paris-Est F- 77455 Marne-la-Vallée e-mail : [email protected]; [email protected]; [email protected] 3 : Synchrotron SOLEIL F- 91192, St-Aubin e-mail : [email protected] Résumé Les tubes composites SiC/SiC sont étudiés comme des matériaux pour le gainage du combustible nucléaire. La compréhension exhaustive des mécanismes d'endommagement de ce matériau nécessite une étude volumique à la fois expérimentale et numérique. Des essais de traction in situ ont été effectués sous la tomographie de rayon X au synchrotron SOLEIL. Des outils de dépouillement ont été mis en place afin d'analyser la microstructure, de mesurer la déformation et de caractériser les mécanismes d'endommagement à l'intérieur du matériau de façon qualitative et quantitative. Les images tomographiques fournissent des descriptions 3D sur la microstructure, qui sont les données d'entrées directes pour la simulation numérique basée sur la méthode FFT. L'utilisation des microstructures réelles permet de combiner directement les résultats de simulation avec les observations expérimentales. Abstract SiC/SiC composite tubes are studied as materials for nuclear fuel cladding. A thorough understanding on the mechanisms of damage to this material requires both an experimental and a numerical study. In situ tensile tests were performed under X-ray tomography at the SOLEIL synchrotron. Post processing methods have been developed to analyze the microstructure, measure the deformation and characterize qualitatively and quantitatively the damage mechanisms inside the material. The tomographic images provide 3D descriptions on the microstructure, which are direct input data for the numerical simulation based on FFT. The use of real microstructures makes it possible to combine the simulation results directly with the experimental observations. Mots Clés : Composite à matrice céramique, mécanismes d'endommagement, tomographie en rayon X, simulation FFT Keywords : Ceramic matrix composite, damage mechanisms, X-ray computed tomography, FFT simulation 1. Une solution de gainage innovante est actuellement développée au CEA/DMN pour le gainage du combustible des réacteurs de quatrième génération (Génération IV) comme le GFR, Gaz Fast Reactor. La solution proposée est un tube sandwich constitué d'une couche interne de composite SiC/SiC (enroulement filamentaire), d'un liner métallique permettant d'assurer l'étanchéité du gainage, et de deux couches externes de composites SiC/SiC (tressage 2D). Le comportement mécanique de ces tubes est déterminé par les couches de composites, qui sont anisotropes, faiblement déformables (~1%) et dont le comportement macroscopique dépend fortement du choix des architectures fibreuses. Les matériaux étudiés dans cette étude sont des tubes de composites Introduction 1 Comptes Rendus des JNC 20 – Ecole des Ponts ParisTech – 28-30 juin 2017 élaborés à partir d'un tressage 2D. Un des paramètres importants de ce type d'architectures fibreuses, est l'angle de tressage, qui influence à la fois la limite d'élasticité et la résistance à la rupture. Les mécanismes de déformation de ces composites SiC/SiC sont essentiellement associés au développement de la microfissuration au sein du matériau. Des travaux de caractérisation de ces mécanismes ont été effectués par observations surfaciques [1] en utilisant la corrélation d'image numérique. En revanche, la description volumique de ces mécanismes, complémentaire des observations de surface, demeure une question ouverte. L'objectif du travail actuel est donc de mettre en place une caractérisation 3D de l'endommagement se développant dans le volume du matériau. Dans ce but, on utilise la tomographie en rayon X comme l'outil essentiel de l'approche expérimentale, et la simulation numérique par la méthode FFT comme un outil complémentaire permettant d'analyser ces résultats expérimentaux. Les outils mis en place sont utilisés pour trois angles de tressage différents afin d'examiner les effets de l'angle de tressage sur les mécanismes d'endommagement. 2. Essais de traction in situ sous tomographie X 1.1 Post-traitement des images tomographiques Des essais de traction in situ ont été réalisés en tomographie par rayons X sur la ligne de faisceau PSICHE du synchrotron français SOLEIL. Les images tomographiques contiennent une grande richesse d'informations sur la microstructure et les mécanismes d'endommagements au sein du matériau. Toutefois, ces informations sont mêlées dans l'image 3D, dans laquelle sont également présents différents artefacts, et leur extraction nécessite la mise en place d'un post-traitement élaboré [3]. Celui-ci se compose des points suivants: (i). Dans l'image de référence (non chargée), les micro- et macro- pores sont identifiés et distingués en fonction de leurs caractéristiques géométriques (le volume et l'allongement des micropores permet de les distinguer des macropores). L1 L2 L3 L4 Figure 1. Profil radial de fraction volumique de macropores et de micropores Les profils dans la direction radiale de macropores et de micropores sont tracés dans Fig. 1 pour le tube tressé à 45°. Une corrélation négative est observée entre les évolutions de ces deux familles de porosités. Cette observation est cohérente avec leur description qualitative : les micropores se situent au sein d'un toron, de forme allongée dans la direction du toron ; tandis que les macropores se situent entre les torons, avec des géométries assez complexes sans orientation préférentielle. Selon ces profils radiaux, l'épaisseur du tube peut être découpée en quatre sous-couches 𝐿𝑖 (voir Fig. 1), correspondant aux demi-couches de chaque couche de tressage. 2 Comptes Rendus des JNC 20 – Ecole des Ponts ParisTech – 28-30 juin 2017 (ii). Les composantes de déformation moyennes sur des couronnes concentriques sont mesurées à l'aide d'un modèle cinématique optimisé sur les champs de déplacement mesurés par corrélation d'images numériques (DVC). Leurs évolutions sur l'épaisseur du tube sont données ci-dessous (Fig. 2). Figure 2. (a) Composantes de déformation mesurées par DVC sur les images tomographiques, comparées aux courbes macroscopiques mesurées par extensomètres sur la surface du tube lors d'un autre essai. (b) Profils radiaux des quatre composantes de déformation mesurée par DVC. La légère différence entre les deux courbes de référence pour la déformation circonférentielle peut être attribuée à la réponse instable de l'extensomètre transverse positionné sur la surface rugueuse d'un tube de faible diamètre. Les déformations axiales et circonférentielles mesurées par la méthode proposée sont en bon accord avec celles mesurées par extensomètres. Ceci valide la méthode de mesure de déformations, et aussi démontre la bonne reproductibilité du comportement macroscopique des tubes étudiés. Quatre composantes de déformation sont présentées dans la Fig. 2.b. La déformation axiale est uniforme à travers l'épaisseur. La déformation circonférentielle présente une tendance à décroitre de l'intérieur vers l'extérieur du tube. Un point surprenant est que la déformation radiale, plus oscillante, est en moyenne positive pour un chargement de traction uniaxiale. (iii). En utilisant une technique de soustraction d'images par DVC [2], les fissures 3D induites par le chargement de traction sont extraites de la microstructure hétérogène pour chaque niveau de chargement. Ils peuvent être classés en deux familles selon leurs orientations locales: les fissures circonférentielles, perpendiculaires à la direction de traction et les fissures dans le plan, qui s'ouvrent dans l'épaisseur du tube (voir Fig. 3). L'évolution avec le chargement des fissures détectées est d'abord étudiée qualitativement par une visualisation directe en 3D des fissures détectées au sein de la microstructure. Figure 3. Fissures classifiées superposées sur la microstructure de tressage à 45°: fissures circonférentielles (rouge) et fissures dans le plan (bleu). 3 Comptes Rendus des JNC 20 – Ecole des Ponts ParisTech – 28-30 juin 2017 Un exemple de résultat est donné dans la Fig. 3 pour le tube tressé à 45 °. Cette figure montre les fissures détectées, colorées selon l'orientation locale et superposées sur la microstructure de tressage. La fissure dans le plan (bleue) semble être issue de la déviation des fissures circonférentielles (rouge), et sa croissance est guidée par les fibres SiC adjacentes. (iv). Une procédure de quantification de la surface et de l'ouverture des fissures est mise en place en utilisant le niveau de gris et l'orientation locale des voxels « fissurés ». L'évolution de ces quantités est représentée en fonction du chargement appliqué à la Fig. 4. Il est notable que l'ouverture moyenne des fissures (~1.5 µm) est légèrement inférieure à la taille de voxel des images tomographiques (2.6µm), sa quantification nécessite donc une précision subvoxel. (c) (a) (b) Figure 4. (a) Evolutions de la densité surfacique des fissures circonférentielles et des fissures dans le plane, comparées à celle de l'énergie cumulée de l'émission acoustique. (b) Evolution de l'ouverture moyenne des fissures circonférentielles, comparée à celle de la déformation axiale. (c) Evolution de l'ouverture moyenne des fissures dans le plan, comparée à celle de la déformation radiale. La densité surfacique des fissures est définie comme le rapport entre la surface totale des fissures sur le volume de la phase solide considéré (Fig. 4.a). L'évolution de ce paramètre pour les fissures circonférentielles est quasi-linéaire jusqu'à la rupture du tube. Les fissures dans le plan commencent à apparaitre à partir de l'étape 3 (169 MPa), et leur densité surfacique augmente de plus et plus rapide jusqu'à la rupture. Contrairement à l'évolution d'énergie cumulée évaluée par Emission Acoustique, la tendance à la saturation n'est observée pour aucune de ces deux familles de fissures. Ceci implique que le développement des réseaux de fissures ne dissipe pas nécessairement beaucoup d'énergie une fois que le composite est déjà significativement endommagé. Les ouvertures moyennes sont mesurées séparément pour les deux familles de fissures (Fig. 4.b et c). Deux changement de pentes sont présents sur l'évolution des fissures circonférentielles, alors que les fissures dans le plan s'ouvrent de plus en plus vite jusqu'à la rupture. Ces ouvertures moyennes sont des données expérimentales inédites susceptibles d'alimenter directement les modèles à base micromécanique. Leurs évolutions sont comparées à celle des déformations moyennes (macroscopiques). Cette superposition est en accord avec l'idée selon laquelle l'ouverture des fissures circonférentielles serait majoritairement responsable de la déformation axiale et laisse penser que l'ouverture des fissures dans le plan serait à l'origine de la déformation radiale positive mesurée. 1.2 Effets de l'angle de tressage Les post-traitements sont implémentés dans un code MatLab, qui permet d'automatiser les dépouillements des images tomographiques du même type. Les tubes élaborés avec trois angles de tressage différents sont étudiés en utilisant les procédures présentées ci-dessus sur un tube avec un tressage à 45°. 4 Comptes Rendus des JNC 20 – Ecole des Ponts ParisTech – 28-30 juin 2017 La visualisation 3D combinée, des mécanismes d'endommagement et la microstructure complexe, envisagée pour établir les liens entre la position des fissures et la microstructure s'est avérée beaucoup trop délicate à interpréter. Ainsi, une procédure de déroulement a été mise en place, qui permet de transformer les informations (fissures et microstructure) du repère cylindrique au repère cartésien. Sur cette configuration déroulée, des projections sont effectuées au sein de chaque sous- couche (voir Fig. 1) permettant ainsi de positionner les fissures par rapport à la microstructure au sein de chaque sous-couche (Fig. 5 et 6). 𝑅𝜃 𝑧 30° 45° 60° (b) Bords des torons (c) (a) Figure 5. (a) Fissures détectées à la première étape d'endommagement pour les trois tubes tressés à différents angles, sous-couche extérieure L4; (b) Courbes contrainte-déformation des trois tubes, avec les points rouges indiquant les niveaux de chargement correspondant aux fissures détectées dans (a) ; (c) Illustration des bords des torons Afin d'étudier l'initiation de fissures, on superpose les fissures détectées à la première étape de chargement à la microstructure de tressage pour chaque tube (Fig. 5). Les fissures sont mises en évidence par des barres colorées selon leurs tailles : petites fissures en vert, grandes fissures en jaune. En regardant les positions des petites fissures (vertes), il semblerait que les fissures s'amorcent préférentiellement aux bords des torons (Fig. 5.c), quel que soit angle de tressage. Cette hypothèse sera discutée à partir des champs de contraintes évalués par simulation numérique au paragraphe 3. La propagation des fissures peut être observée par les grandes fissures dans la Fig. 6.a, qui met en évidence un effet clair de l'angle de tressage : les fissures dans le tube tressé à 60° propagent principalement entre les torons (inter-toron), alors que les fissures dans les deux tubes de faibles angles de tressage traversent les torons (intra-toron). Cette conclusion est confirmée par les fissures détectées à la dernière étape de chargement (Fig. 6.a). Dans la Fig. 6.a, les fissures dans le plan sont également tracées, leur population présente aussi un fort effet d'angle de tressage : elles sont plus nombreux dans le tube tressé à 45° que dans le 30°, et elles sont très peu propagées dans le tube tressé à 60°. Enfin, une observation plus détaillée de la fissuration dans le plan semble montrer qu'elles seraient engendrées par une déviation des fissures circonférentielles dans le « plan » du toron (Fig. 6.c). 5 Comptes Rendus des JNC 20 – Ecole des Ponts ParisTech – 28-30 juin 2017 B (b) 𝑟 B 𝑧 s B (a) (c) Simulation numérique par la méthode FFT Figure 6. (a) Fissures détectées à la dernière étape de chargement pour chaque tube testé sous-couche extérieure L4; (b) Courbes contrainte-déformation des trois tubes, avec les points rouges indiquant les niveaux de chargement correspondant aux fissures détectées dans (a) ; (c) Coupe dans le plan 𝑟𝑧 selon le segment B. 3. Les images tomographiques peuvent directement alimenter la simulation numérique basée sur l'algorithme de transformée de Fourrier rapide (FFT). Deux avantages principaux de cette méthode sont : (i) l'algorithme utilise une discrétisation de la microstructure sous forme d'une grille régulière permettant d'utiliser directement les images tomographiques 3D de la microstructures réelles, sans passer par une étape délicate de maillage; (ii) massivement parallélisée au sein du code AMITEX [4], la méthode peut s'appliquer à des volumes de très grande taille permettant ainsi de conserver la grande finesse de discrétisation spatiale obtenue en imagerie tomographique. La microstructure du composite étudié est très complexe et surtout multi-échelle. Donc sa description nécessite un niveau minimum de discrétisation spatiale, afin notamment de décrire les micropores, au moins les plus importants, à l'origine de l'anisotropie élastique du toron [5]. De plus, afin de limiter les effets de bords inhérents aux conditions aux limites imposées sur les sections extrémales du tube, la longueur du tronçon simulé doit être suffisamment importante. Ces exigences imposent l'utilisation d'un code massivement parallélisé. A titre d'exemple, des tailles de cellule de 1993x1993x1685, soit environ 7 milliards de voxels, ont pu être introduites au sein du code AMITEX [3] utilisé sur le supercalculateur cobalt du TGCC (Très Grand Centre de Calcul). 6 Comptes Rendus des JNC 20 – Ecole des Ponts ParisTech – 28-30 juin 2017 𝑅𝜃 𝑧 (a) (b) Figure 7. (a) Distribution de contrainte principale maximale calculée par la simulation FFT pour le tube de tressage à 45° ; (b) Contrainte principale maximale moyennée dans la demi-couche extérieure selon la direction radiale, projetée dans le plan 𝑅𝜃-𝑧, les fissures détectées par la tomographie X sont présentées en pixels rouges Le résultat d'un calcul sur une microstructure non-endommagée est donnée dans la Fig. 7 pour le tube tressé à 45°. Fig. 7.a met en évidence une forte hétérogénéité, induite par la géométrie du tressage, de la distribution des contraintes principales maximales. A nouveau, afin de faciliter l'interprétation de ces champs 3D, ces contraintes sont moyennées selon la direction radiale, dans la demi-couche extérieure de tressage. Cette projection dans le plan 𝑅𝜃-𝑧 est présentée à la Fig. 2.b, sur laquelle sont également superposées les fissures détectées par la tomographie X à la première étape d'endommagement. Ces fissures sont presque toutes reliées aux bords des torons où se situent d'importantes concentrations de contrainte. Ce dialogue direct entre la caractérisation expérimentale et la simulation numérique permet de conforter l'idée que les fissures matricielles s'initient aux bords des torons (Fig. 5.c). Cette analyse des concentrations de contrainte, en cours de finalisation, devrait également nous permettre d'expliquer l'augmentation de la limite d'élasticité avec la diminution de l'angle de tressage. 4. Conclusion Pour les essais in situ sous tomographie X, un post-traitement élaboré a été mise en place, qui a permis de caractériser l'initiation et la propagation des fissures au sein des composites tressés à différents angles. Les évolutions de l'ouverture moyenne et de la surface des fissures en fonction du chargement appliqué la modélisation micromécanique. Les simulations numériques sur des microstructures réelles ont mis en évidence de fortes localisations de contraintes susceptibles d'être à l'origine de l'initiation des fissures observées expérimentalement. Remerciements Ce travail a été soutenu par le programme du CNRS « Défi NEEDS Matériaux ». Références [1] F. Bernachy-Barbe, L. Gelebart, M. Bornert, J. Crepin, and C. Sauder. « Characterization of SiC/SiC composites damage mechanisms using digital image correlation at the tow scale ». Composites Part A: Applied Science and Manufacturing, 68(0):101 – 109, 2015. fournissent des arguments expérimentaux pour [2] Nguyen TT, Yvonnet J, Bornert M, Chateau C. « Initiation and propagation of complex 3D networks of cracks in heterogeneous quasi-brittle materials: Direct comparison between in situ testing-microCT experiments and phase field simulations ». J Mech Phys Solids 2016;95:320–50. doi:10.1016/j.jmps.2016.06.004. [3] Y. Chen, L. Gelebart, C. Chateau, M. Bornert, A. King, P. Aimedieu and C. Sauder. « Full 3D damage characterization of a 2D- braided CVI-SiC/SiC composite tube by in situ tensile test under X-ray tomography ». Composites PartA, submitted on 28 March 2017 [4] http://www.maisondelasimulation.fr/projects/amitex/html/index.html [5] C. Chateau, « Analyse expérimentale et modélisation micromécaniques du comportement élastique et de l'endommagement de composites SiC/SiC unidirectionnels », Thèse de doctorat, Ecole polytechnique, 2011 7
1704.06709	1	1704	2017-04-11T08:54:01	Tensile fracture behavior of short carbon nanotube reinforced polymer composites: A coarse-grained model	[ "physics.app-ph", "cond-mat.mtrl-sci", "cond-mat.soft", "physics.comp-ph" ]	Short-fiber-reinforced polymer composites are increasingly used in engineering applications and industrial products owing to their unique combination of superior mechanical properties, and relatively easy and low cost manufacturing process. The mechanical behavior of short carbon nanotube (CNT) polymer composites, however, remains poorly understood due to size and time limitations of experiments and atomistic simulations. To address this issue, the tensile fracture behavior of short CNT reinforced poly (methyl methacrylate) (PMMA) matrix composites is investigated using a coarse-grained (CG) model. The reliability of the CG model is demonstrated by reproducing experimental results on the stress-stain behavior of the polymer material. The effect of the nanotube weight fraction on the mechanical properties, i.e. the Young's modulus, yield strength,tensile strength and critical strain, of the CNT/polymer composites is studied in detail. The dependence of the mechanical properties of the composites on the orientation and length-to-diameter aspect ratio of nanotube reinforcements is also examined.	physics.app-ph	physics	Tensile fracture behavior of short carbon nanotube reinforced polymer composites: a coarse-grained model Behrouz Arash1,, Harold S. Park2, Timon Rabczuk1,3,† 1Institute of Structural Mechanics, Bauhaus Universität-Weimar, Marienstr 15, D-99423 2Department of Mechanical Engineering, Boston University, Boston, Massachsetts 02215, USA 3School of Civil, Environmental and Architectural Engineering, Korea University, Seoul, Weimar, Germany Abstract Republic of Korea Short-fiber-reinforced polymer composites are increasingly used in engineering applications and industrial products owing to their unique combination of superior mechanical properties, and relatively easy and low-cost manufacturing process. The mechanical behavior of short carbon nanotube (CNT) polymer composites, however, remains poorly understood due to size and time limitations of experiments and atomistic simulations. To address this issue, the tensile fracture behavior of short CNT reinforced poly (methyl methacrylate) (PMMA) matrix composites is investigated using a coarse-grained (CG) model. The reliability of the CG model is demonstrated by reproducing experimental results on the strain-stress behavior of the polymer material. The effect of the nanotube weight fraction on the mechanical properties, i.e. the Young's modulus, yield strength, tensile strength and critical strain, of the CNT/polymer composites is studied in detail. The dependence of the mechanical properties of the composites on the orientation and length-to-diameter aspect ratio of nanotube reinforcements is also examined. Keywords: polymer-matrix composites; carbon nanotube; tensile fracture; coarse-grained model Author to whom correspondence should be addressed. E-mail address: [email protected], Tel: +49 3643 584511. † Author to whom correspondence should be addressed. E-mail address: [email protected], Tel: +49 3643 584511. 1 1. Introduction Short-fiber-reinforced polymers (SFRPs) are a developing class of composite materials, which have attracted intense attention due to their outstanding mechanical, thermal and electrical properties [1, 2]. The mechanical properties of SFRP composites can reach stiffness levels attainable with continuous fibers, while the ability of unreinforced polymers to be formed into complex shapes is also preserved [3]. In addition, the production process for short fiber composites is more economical than continuous fiber composites [4]. This compromise between cost and performance makes short fiber polymer composites as excellent alternatives in electronic, automotive, oilfield and chemical industries [5]. Among different types of fibers used in the composites, the outstanding mechanical properties of carbon nanotubes (CNTs) promise ultra- high-strength reinforcements in high-performance polymer matrix composites [6]. In order to develop SFRPs, a quantitative understanding of their mechanical properties is of great significance since the mechanical performance of the materials strongly depends on controllable parameters such as fiber length and orientation [7]. Up to now, a number of experimental studies have been conducted in the literature on the mechanical behavior of reinforced polymer composites [8-12]. The experimental investigations, however, provide insufficient insight into molecular scale processes such as the interfacial interactions between nanotubes and matrix. The main reason for the drawback is rooted in the limited resolution of experimental techniques at the nanoscale. Furthermore, experimental efforts frequently encounter difficulties in fabricating SFRPs with uniformly distributed fibers with desired sizes. Molecular dynamics (MD) simulations, in contrast, provide detailed information of phenomena at the nanoscale such as stick–slip mechanisms and the interfacial interactions between matrix and reinforcements [13-16]. MD simulations also facilitate the interpretation of 2 experimental data, and additionally open a route to new designs of nanocomposites. Therefore, molecular simulations are necessary in the understanding of mechanical behavior of reinforced polymer nanocomposites. Zhu et al. [17] studied the elastic properties of an epoxy Epon 862 matrix with a size of 4.028×4.028×6.109 nm3 reinforced by short (10, 10) CNTs with length-to-diameter aspect ratios of 2.15 and 4.5. They reported that short CNT fibers increase the Young's modulus of the polymer matrix up to 20% compared to the pure Epon 862 matrix. Molecular simulation studies on the elastic properties of short single-walled CNT (SWCNT) reinforced Poly (vinylidene fluoride) (PVDF) matrix composites [18] showed that a (5, 5) SWCNT with a length of 2 nm can increase the Young's modulus of a CNT/PVDF unit cell by 1 GPa. The simulation unit cell consists of a (5, 5) SWCNT with a volume fraction of 1.6% embedded in 60 PVDF chains. Arash et al. [19] investigated the mechanical behavior of CNT/poly (methyl methacrylate) (PMMA) polymer composites under tension. They proposed a method for evaluating the elastic properties of the interfacial region of CNT/polymer composites. Their simulation results on the elastic properties of a PMMA polymer matrix with a size of 3.7×3.7×8 nm3 reinforced by a short (5, 5) SWCNT reveal that the Young's modulus of the composite increases from 3.9 to 6.85 GPa with an increase in the length-to-diameter aspect ratio of the nanotube from 7.23 to 22.05. Although molecular simulations have been broadly used in modeling reinforced polymer nanocomposites, the massive computational effort required by the simulations strictly limits their applicability to small molecular systems over a limited time scale. These drawbacks hinder MD simulations to study the effect of fiber sizes and orientations on the mechanical behavior of reinforced polymer nanocomposites. In order to overcome these limitations, coarse-grained (CG) models beyond the capacity of molecular simulations have been developed in the literature [20- 22]. The principle of CG models is to map a set of atoms to a CG bead, which reduces the atomistic 3 degrees of freedom, resulting in substantial increases in the accessible time and length-scales while partially retaining the molecular details of an atomistic system. Up to now, many CG models have been developed for polymer materials [21, 23, 24]. Recently, the reliability of these approaches in modeling graphenes and CNTs has been also examined [25-28]. Ruiz et al. [27] established a CG model for the elastic and fracture behavior of graphenes with a ~200 fold increase in computational speed compared to atomistic simulations. Zhao et al. [28] calibrated parameters of the CG stretching, bending and torsion potentials for SWCNTs to study their static and dynamic behaviors. They also derived parameters of non-bonded van der Waals (vdW) interactions between CNTs in a bundle. The CG model was shown to have great potential in the analysis of the mechanical properties of CNT bundles with low computational cost compared to atomistic simulations. Arash et al. [29] developed a comprehensive CG model of CNT reinforced polymer composites capturing the non-bonded interactions between polymer chains and nanotubes. They then employed the model to study the elastic properties of short and long CNT reinforced PMMA polymer composites. Despite the simulation studies on the elastic properties of short CNT reinforced polymer composites, there is still no simulation investigation on the fracture behavior of a polymer matrix reinforced by randomly distributed short CNTs. Furthermore, the effects of nanotubes length and orientation on the mechanical properties of short CNT/polymer composites at large deformations have not been quantified. Hence, a quantitative study on the mechanical properties of short CNT/polymer composites is essential to achieve a successful design, synthesis, and characterization of the nanocomposites. In this study, the mechanical behavior of short CNT/PMMA composites under tension is investigated in elastic and plastic regimes using a CG model. The applicability of the CG model in predicting the strain-stress behavior of PMMA polymer is examined using experimental results 4 reported in the literature. The effects of the weight fraction, orientation and length-to-diameter aspect ratio of unidirectional and randomly distributed CNT reinforcements on the mechanical properties of the nanocomposites are studied in detail. The mechanical behavior of the CNT/PMMA composites observed in the CG simulations is also interpreted using a micromechanical continuum model. 2. Methods In this study, we used a CG model that was previously developed and examined for modeling CNT/PMMA polymer composites [29]. In this model, each methyl methacrylate (C5O2H8) monomer is treated as a bead with an atomic mass of 100.12 amu as illustrated in Fig. 1 (a). The center of the bead is chosen to be the center of mass of the monomer. The pseudoatom is defined as P bead, which enables a 15 fold decrease in the number of degrees of freedom (DOF) of a polymer chain compared to its corresponding full atomistic system. The CG model was also developed for modeling (5, 5) CNTs, where each five atomic rings are mapped into a CG bead with an atomic mass of 600.55 amu (see Fig. 1(b)). The bead is defined as a C bead, which decreases the number of DOF of a nanotube 50 fold with respect to full atomistic simulations. (a) (b) Fig. 1. (a) Two monomers of a PMMA polymer chain and its CG model made of two P beads, and (b) a (5, 5) CNT with 10 rings of carbon atoms and its CG model made of two C beads. 5 The CG force field is decomposed into bonded and non-bonded potential functions. The total potential energy, 𝐸𝑡𝑜𝑡𝑎𝑙, of a system is therefore written as the sum of energy terms associated with the variation of the bond length, 𝐸𝑏, the bond angle, 𝐸𝑎, the dihedral angle, 𝐸𝑑, the vdW interactions, 𝐸𝑣𝑑𝑊, and the constant free energy of the system, 𝑈0, as 𝑈𝑡𝑜𝑡𝑎𝑙 = ∑ 𝐸𝑏𝑖 𝑖 + ∑ 𝐸𝑎𝑗 𝑗 + ∑ 𝐸𝑑𝑘 𝑘 + ∑ 𝐸𝑣𝑑𝑊𝑙𝑚 𝑙𝑚 + 𝑈0. The functional forms of the contributing terms for a single interaction are as follows: 𝐸𝑏(𝑑) = 𝐸𝑎(𝜃) = 𝑘𝑑 2 𝑘𝜃 2 (𝑑 − 𝑑0)2 for 𝑑 < 𝑑𝑐𝑢𝑡, (1a) (𝜃 − 𝜃0)2, (1b) 𝐸𝑑(𝜙) = 𝑘𝜙 2 [1 + cos 2𝜙], (1c) 𝐸𝑣𝑑𝑊(𝑟) = 𝐷0 [( 12 ) 𝑟0 𝑟 − 2 ( 6 𝑟0 𝑟 ) ], (1d) where 𝑘𝑑 and 𝑑0 are the spring constant of the bond length and the equilibrium bond distance, respectively; 𝑘𝜃 and 𝜃0 are respectively the spring constant of the bond angle and the equilibrium bond angle; 𝑘𝜙 and 𝜙 are the spring constant of the dihedral angle and the dihedral angle, respectively. 𝐷0 and 𝑟0 are the Lennard-Jones parameters associated with the equilibrium well depth and the equilibrium distance, respectively. A potential cutoff of 1.25 nm is used in calculation of vdW interactions. The parameters of the force field are listed in Table 1. The following simulations were performed using Accelrys Materials Studio 7.0. Table 1. Parameters of the CG force field for C and P beads. Type of interaction Bond Angle Dihedral vdW Parameters 𝐾0(𝑘𝑐𝑎𝑙/𝑚𝑜𝑙/Å2) 𝑑0(Å) 𝑑𝑐𝑢𝑡 (Å) C bead 1610.24 6.03 6.77 P bead 194.61 4.02 4.3 𝐾𝜃(𝑘𝑐𝑎𝑙/𝑚𝑜𝑙/Å2) 66148.01 794.89 𝜃0(°) 𝐾𝜙(𝑘𝑐𝑎𝑙/𝑚𝑜𝑙) ) 𝐷0(𝑘𝑐𝑎𝑙 𝑚𝑜𝑙 ⁄ 𝑟0 (Å) 6 180 14858.80 10.68 9.45 89.6 42.05 1.34 6.53 C-P beads - - - - - - 2.8 7.71 3. Results and discussion 3.1. Mechanical properties of polymer matrix To evaluate the applicability of the CG model in predicting the mechanical properties of CNT/PMMA composites, the strain-stress behavior of PMMA polymer is first investigated. Results obtained by the CG model are then justified by experimental data available in the literature. A simulation unit cell with a size of 12×12×12 nm3 and periodic boundary conditions that contains amorphous PMMA polymer with a mass density of 1.1 𝑔/𝑐𝑚3 is initially constructed. Each polymer chain is composed of 100 repeated monomer units. The CG representative volume element (RVE) consists of 11400 beads, which is equivalent to a full atomistic system with 171000 atoms. In order to find a global minimum energy configuration, a geometry optimization is first performed using the conjugate-gradient method [30]. The system is then allowed to equilibrate over the isothermal–isobaric ensemble (NPT) ensemble at room temperature of 298 K and atmospheric pressure of 101 kPa for 10 ns. In the NPT simulations, the time step is set to be 10 fs. The Andersen feedback thermostat [31] and the Berendsen barostat algorithm [32] are respectively used for the system temperature and pressure conversions. The NPT simulation is followed by a further energy minimization. The process removes internal stresses in the polymer system. After the preparation of the system, the constant-strain minimization method is applied to the equilibrated system to measure the material properties of the composite. A small tensile strain of 0.02% is applied to the periodic structure shown in Fig. 2 (a) in the x-direction. The application of the static strain is accomplished by uniformly expanding the dimensions of the simulation cell in the loading direction and re-scaling the new coordinates of the atoms to fit within the new dimensions. After each increment of the applied strain, the potential energy of the structure is re- 7 minimized keeping the lattice parameters (i.e. simulation box sizes and angles) fixed. The stress in the unit cell is then calculated based on the virial stress definition. During the static deformation, the pressure in y- and z-directions is kept at atmospheric pressure by controlling the lateral dimensions. This process is repeated for a series of strains from which the variation of stress versus applied strain is obtained. Fig. 2 (b) presents the true strain-true stress behavior of the polymer system subjected to the static tensile loading in the x-direction predicted by the CG model. The strain-stress response of the material is also compared to experimental results under quasi-static loading. The Young's modulus of the PMMA polymer predicted by the CG model is calculated to be 2.98 GPa, which is in fair agreement with the available experimental results varying from 2.24 to 3.27 GPa [33, 34]. From Table 2, the yield strength of the PMMA polymer obtained from the present CG model and experiments with strain rates of 2.42×10-4 and 9.87×10-5 [34] are respectively 52.30, 56.6 and 51.4 MPa, showing a percentage difference up to 7% with experimental data. The tensile strength of PMMA polymer predicted by the CG model is calculated to be 85.82 MPa, which is in good agreement with those measured in experiments [34], i.e. 86.9 MPa with the strain rate of 2.42×10- 4 and 79.6 MPa with the strain rate of 9.87×10-5. As listed in Table 1, the critical strain of the polymer is also measured to be 0.159, 0.165 and 0.178 using the CG model and experimental tests with the strain rates of 2.42×10-4 and 9.87×10-5 [34], respectively. The critical strain is defined as the strain at which the stress drops to zero as shown in Fig. 2 (b) for the CG model. Figs. 2 (c) and (d) illustrate the initiation and propagation of tensile fracture failure in the polymer system at the critical strain of 0.159 and strain of 0.198. The simulation results reveal that the CG model is able to effectively estimate the mechanical behavior of PMMA polymer. 8 (a) (b) (c) (d) Fig. 2. (a) Initial configuration of an RVE of pure PMMA polymer with a size of 12×12×12 nm3 (b) true stress-true strain behavior of the polymer system subjected to a uniaxial tensile loading, (c) snapshot at the critical strain of 0.159, and (d) snapshot at strain of 0.198. The RVE contains 11400 beads, which are equivalent to 171000 atoms. 9 Table 2. Mechanical properties of pure PMMA polymer matrix. (Strain rate=2.42e- (Strain rate=9.87e- Experiment Experiment Young's modulus (GPa) Yield strength (MPa) Tensile strength (MPa) Critical strain 4) 3.27 56.6 86.9 0.165 5) 3.12 51.4 79.6 0.178 Present CG model 2.98 52.30 85.82 0.159 3.2. Mechanical properties of unidirectional short nanotube polymer composites Following the successful application of the CG model in predicting the mechanical behavior of PMMA polymer, we extend the CG model for the failure prediction of unidirectional short CNT reinforced PMMA composites. A unit cell of PMMA polymer with the same size of 12×12×12 nm3 that contains four unidirectional (5, 5) CNTs is initially constructed as illustrated in Fig. 3 (a). The length of CNTs is 10 nm, and their weight fraction is set to be 0.03 (3 wt%). The unit cell contains 11164 beads, which is equivalent to a full atomistic system with 169700 atoms. In the following simulations, the mass density of CNT/PMMA polymer is set to be 1.1 𝑔/𝑐𝑐. The CG RVE consists of 11164 beads, which is equivalent to a full atomistic system with 169700 atoms. The true strain-true stress curve of the CNT(3 wt%)/PMMA polymer composite is presented in Fig. 3 (b) from which the Young's modulus and tensile strength are respectively obtained to be 3.34 GPa and 95.50 MPa, showing percentage increases of 16 and 11% compared to pure polymer. From Fig. 3 (b), the tensile fracture failure in the CNT/PMMA composite occurs at the critical strain of 0.142 as illustrated in Fig. 3 (c). The fracture further propagates through the material at the strain of 0.19 as shown in Fig. 3 (d). In comparison to the pure polymer, the critical strain decreases as much as 10% in the presence of CNTs. The observation can be interpreted as the debonded CNT reinforcements behaving like voids at large strains, which weaken the composite. 10 (a) (b) (d) (c) Fig. 3. Tensile fracture of a CNT (3 wt%)/PMMA composite with 10-nm long (5, 5) CNTs aligned in the load direction: (a) initial configuration of the composite (b) the true stress-true strain behavior, (c) snapshot at the critical strain of 0.142, and (d) snapshot at the strain of 0.19. The size of unit cell is 12×12×12 nm3 that contains 11164 beads. The number of beads is equivalent to 169700 atoms. 11 To further investigate the influence of short nanotube reinforcements on the material characteristics of the polymer composites, the effect of the weight fraction of CNTs on the mechanical behavior of CNT/PMMA composites is presented in Table 3. In the simulations, the RVE size, the size of nanotubes and the mass density of CNT/PMMA composite are the same as described in Fig. 3 (a). CNT fibers are unidirectional and their weight fraction varies from 3 to 10 wt%. To adjust the value of weight fraction, the number of (5, 5) CNTs in the polymer matrix differs from 4 to 12. From Table 3, the Young's modulus of CNT/PMMA composite increases from 3.34 to 3.63 GPa with an increase in the weight fraction of CNTs from 3 to 5 wt%, showing percentage increases of 16 and 26% compared to pure polymer, respectively. The Young's modulus is further raised to 4.22 and 4.52 GPa with increasing the weight fraction of CNTs to 8 and 10 wt%. It implies that short CNT fibers with the length-to-diameter (𝐿/𝐷) aspect ratio of 14.7 and weight fractions of 8 and 10 wt% significantly enhance the stiffness of a PMMA polymer matrix as high as 47 and 57%, respectively. The simulation results also show that the tensile strength of the CNT/PMMA composites increases from 95.50 to 100.72 MPa with increasing CNT weight fraction from 3 to 5 wt%, indicating percentage increases of 11 and 17% compared to pure polymer, respectively. The tensile strength of the CNT/PMMA composite with CNT weight fractions of 8 and 10 wt% respectively increases to 108.55 and 114.81 MPa. It implies that short CNTs with a weight fraction of 10 wt% aligned in the load direction noticeably strengthen the polymer matrix as much as 34%. 12 Table 3. Mechanical properties of CNT/PMMA polymer composites reinforced by 10-nm long (5, 5) CNTs aligned in the load direction. Weight fraction percentage (wt %) Present CG model Krenchel's rule of mixtures Young's Tensile Young's Tensile modulus (GPa) strength (MPa) modulus (GPa) strength (MPa) Pure polymer 3 5 8 10 2.88 3.34 3.63 4.22 4.52 85.83 95.50 100.72 108.55 114.81 - 3.38 3.70 4.44 4.85 - 94.08 98.17 106.35 110.44 As presented in Fig. 4, the critical strain of CNT/PMMA composites increases from 0.148 at the weight fraction of 5 wt% to 0.170 at the weight fractions of 8 wt%, respectively. The critical strain further increases to 0.183 at the weight fraction of 10 wt%, indicating a percentage increase of 15% in comparison to the pure PMMA polymer. The simulation results reveal that CNT reinforcements with the weight fractions less than 5 wt% behave as voids at large strains, which decrease the critical strain of composites compared to the pure polymer material leading to a more brittle behavior. In contrast, CNT fibers with the weight fractions greater than 8 wt% improve the tear strength of polymer composites subjected to tensile loading by controlling the growth of cracks in the polymer matrix, leading to a more ductile behavior compare to pure polymer. 13 Fig. 4. Effect of the CNT weight fraction on the tensile fracture behavior of CNT/PMMA composites. The size of unit cell is 12×12×12 nm3 and the 10-nm long (5, 5) CNTs are aligned in the load direction. The mechanical behaviors observed in the simulations can be interpreted by micromechanical continuum models. Micromechanics can be used to model the mechanical properties of composites. In this study, Krenchel's rule of mixtures for short fiber composites is used for estimating the Young's modulus of the polymer composites as [35] 𝐸𝑐 = 𝜂0𝜂𝑙𝐸𝑓𝑉𝑓 + 𝐸𝑚𝑉𝑚, (1) where superindices 𝑐, 𝑓 and 𝑚 refer to composite, fiber and matrix, respectively. 𝐸 and 𝑉 denote the Young's modulus and volume fraction of the material. The Young's modulus of a (5, 5) CNT reinforcement is measured to be 1.65 TPa using MD simulations [19]. It is noteworthy that in calculation of the Young's modulus of the CNT, the nanotube is supposed to be a solid bar with a cross sectional area of 𝐴𝐶𝑁𝑇 = 1 4 𝜋𝑑2. The terms 𝜂𝑙 and 𝜂0 represent the efficiency factors of fiber 14 length and orientation. 𝜂0 can be chosen to be equal to 1 for unidirectional fibers. The factor 𝜂𝑙 is given by [36] 𝜂𝑙 = 1 − 𝜁𝐿𝑓 2 tanh 𝜁𝐿𝑓 2 where , (2) 𝜁 = 1 𝑟 𝐸𝑚 𝐸𝑓(1−𝜈) ln( 𝜋 4𝑉𝑓) 1 2⁄ (3) Here, 𝐿𝑓 and 𝑟 are the length and radius of fibers, and 𝜈 is the Poisson's ratio of matrix. In addition, the composite tensile strength, 𝜎𝑐, is obtained as [37] 𝜎𝑐 = 𝜂0𝜂𝑙𝜎𝑓𝑉𝑓 + 𝜎𝑚𝑉𝑚, (4) in which 𝜎𝑓 and 𝜎𝑚 are the tensile strength of fiber and matrix, respectively. The Kelly-Tyson model [38] suggests that the maximum stress in fibers embedded in a matrix is proportional to the fiber aspect ratio (𝐿/𝐷) and the fiber/matrix interfacial shear stress (𝜏). Incorporating this model into the rule of mixture gives the composite tensile strength as 𝜎𝑐 = 𝜂0𝜂𝑙2𝜏(𝐿 𝐷⁄ )𝑉𝑓 + 𝜎𝑚𝑉𝑚. (5) The interfacial shear stress between PMMA matrix and CNT has been obtained to be 35.9 MPa through pullout simulations [39]. Based on the above description, the Young's modulus and tensile strength of the CNT/PMMA composites calculated from Eqs. (1) and (5) are compared to those obtained from the CG model in Table 2. From Table 3, the Young's modulus of a PMMA matrix composite reinforced by 10-nm long (5, 5) CNTs with weight fractions of 3 and 5 wt% are respectively calculated to be 3.38 and 3.70 GPa using Eq. (1). The results reveal percentage differences of 1.1 and 1.9% at the weight fractions of 3 and 5 wt%. The percentage difference increases to 7.3% at the weight fraction of 10 wt%, where the Young's modulus of the CNT/PMMA composite predicted by the CG model and 15 the micromechanical mode are 4.44 and 4.85 GPa, respectively. Furthermore, the tensile strength of the polymer composite calculated from Eq. (5) is 94.08 and 98.17 MPa at the weight fraction of 3 and 5 wt%, showing percentage differences of 1.5 and 2.5% compared to the CG simulation results. From Eq. (5), the tensile strength of the polymer composite is respectively obtained to be 106.35 and 110.44 MPa at the weight fraction of 8 and 10 wt%, revealing a percentage difference of up to 3.8% in comparison to the CG simulation results. It is concluded that there is a good agreement between results obtained from the rule of mixture and CG simulations for unidirectional short CNT fibers. However, the micromechanical model is unable to predict the strain-stress behavior and the critical strain of the composite materials. Furthermore, the development of an accurate micromechanical model for predicting the mechanical properties of randomly distributed short fiber composites is quite difficult because of the complicated interactions at the interface of the fibers and matrix as well as the complex fiber length and orientation effects. Therefore, the value of the CG model lies in modeling polymer matrix composites reinforced by unidirectional and randomly oriented short CNTs, while accounting for the key interactions between polymer chains and the CNTs. 3.3. Mechanical properties of randomly distributed short nanotube polymer composites The effective properties of a randomly distributed fiber composite material are obtained from a sufficiently large sample volume that is a statistical representative of the whole microstructure. Hill defined an RVE as a sample that (a) is structurally entirely typical of the whole mixture on average, and (b) contains a sufficient number of inclusions for the apparent overall moduli to be effectively independent of the surface values of traction and displacement [40]. In order to find an appropriate size for the RVE, we first fulfill a sample enlargement test. In simulations, cubic 16 polymer matrices with side lengths ranging from 20 to 50 nm reinforced by randomly distributed (5, 5) CNTs are considered as illustrated in Fig. 5. The length of CNTs is 10 nm and their weight fraction is set to be 10 wt%. The mass density of the CNT/PMMA composite is also set to be 1.1 g/cc. In order to obtain quasi-isotropic mechanical properties, a uniform probability distribution function is used to position the CNTs inside the RVE. We compute the Young's modulus and tensile strength of an RVE with a side length of 𝑙. The calculations are continued for a larger RVE with a side length of 𝑙′ > 𝑙. 𝑙′ is taken to be sufficiently large size of the RVE, if the following criteria are met [41]: 𝐸𝑙′−𝐸𝑙 ′ < 0.01, 𝐸𝑙 𝜎𝑐𝑙′−𝜎𝑐𝑙 𝜎𝑐𝑙′ < 0.01. (6) where 𝐸𝑙′ and 𝐸𝑙 are the Young's modulus of the RVE size of 𝑙 and 𝑙′, respectively, and 𝜎𝑐𝑙′ and 𝜎𝑐𝑙 are respectively the tensile strength of the RVE size of 𝑙 and 𝑙′. From simulation results presented in Table 4, the Young's modulus of the CNT/PMMA composite is 3.35 and 3.27 GPa at the side lengths of 20 and 30 nm, respectively, showing a percentage difference of 2.4%. The tensile strength of the composite is also calculated to be 104.51 and 102.15 MPa at the side lengths of 20 and 30 nm, respectively, indicating a percentage difference of 2.3%. The percentage differences respectively decreases to 0.6 and 0.1% for the Young's modulus and tensile strength at the RVE size of 50×50×50 nm3, which both meet the criteria defined in Eq. (6). At the RVE size, the Young's modulus and tensile strength of the CNT (10 wt%)/PMMA composite are obtained to be 3.24 GPa and 101.85 MPa, respectively. The number of beads in the RVE size is greater than 700,000, which is equivalent to a full atomistic system with more than 11 million atoms. 17 Fig. 5. A CNT (10 wt%)/PMMA composite with 10-nm long (5, 5) CNTs randomly distributed in three dimensional space. The size of unit cell is 20 × 20 × 20 𝑛𝑚3 that contains 50648 beads. The number of beads is equivalent to 775400 atoms. Table 4. Effect of RVE size on the mechanical properties of PMMA matrix reinforced by 10-nm long (5, 5) CNTs randomly distributed in plane. The weight ratio of CNTs is set to be 10 wt%. Number of beads (number of equivalent atoms) 48520 (734,780) 163750 (2,479,882) 388160 (5,878,240) 756912 (11,462,568) RVE size (nm3) 𝟐𝟎 × 𝟐𝟎 × 𝟐𝟎 𝟑𝟎 × 𝟑𝟎 × 𝟑𝟎 𝟒𝟎 × 𝟒𝟎 × 𝟒𝟎 𝟓𝟎 × 𝟓𝟎 × 𝟓𝟎 Young's modulus Tensile strength (GPa) 3.35 3.27 3.22 3.24 (MPa) 104.51 102.15 101.71 101.85 After determining the appropriate RVE size, the effect of CNT weight fraction on the mechanical properties of randomly distributed CNT/PMMA composites is investigated. In the simulations, the size of CNTs and the mass density of the composite are the same as described in Fig. 5. As presented in Table 5, the Young's modulus of CNT/PMMA composite increases from 3.05 to 3.11 GPa with an increase in the weight fraction of CNTs from 5 to 8 wt%, respectively, 18 revealing percentage increases of 6 and 8% in comparison to pure PMMA polymer. The Young's modulus further increases to 3.24 GPa at the CNT weight fraction of 10 wt%. It implies that randomly distributed short CNT fibers with the aspect ratio of 𝐿 𝐷⁄ = 14.7 and the weight fraction 10 wt% improve the stiffness of a PMMA polymer matrix as much as 12.5%. From the simulation results, the tensile strength of the composite increases from 94.22 to 96.80 MPa with increasing the CNT weight fraction from 5 to 8 wt%, showing percentage increases of 7.7 and 10% compared to pure polymer. The tensile strength of the CNT/PMMA composite increases to 99.63 MPa at the weight fraction of 10 wt%, which implies that randomly distributed short CNTs with a weight fraction of 10 wt% strengthen the polymer matrix as high as 16%. It can be seen that while unidirectional 10-nm long (5, 5) CNTs significantly improve the mechanical properties of PMMA polymer composites (up to 57% for the Young's modulus and 34% for the tensile strength at the weight fraction of 10 wt%), the properties experience slight increases in the presence of the randomly distributed nanotubes (up to 12.5% for the Young's modulus and 16% for the tensile strength at the weight fraction of 10 wt%). Table 5. Effect of CNT weight fraction on the mechanical properties of PMMA polymer matrix reinforced by randomly distributed (5, 5) 10-nm long CNTs. The RVE size is 50×50×50 nm3. wt (%) Young's modulus (GPa) Tensile strength (MPa) 5 8 10 3.05 3.11 3.24 92.44 94.80 99.63 To further study the mechanical behavior of CNT/PMMA composites, the effect of the aspect ratio of CNTs (𝐿/𝐷) on their mechanical properties is presented in Table 6. The size of RVE is assumed to be 50×50×50 nm3 with and periodic boundary conditions are imposed in all directions. The diameter of the (5, 5) CNTs is 0.68 nm and their aspect ratio varies from 14.7 to 44.1, while 19 their weight fraction is kept to be 8 wt%. The mass density of PMMA polymer matrix is set to be 1.1 g/cc. From Table 5, the Young's modulus of PMMA polymer matrix reinforced by (5, 5) CNTs increases from 3.11 GPa to 3.59 and 4.01 GPa with an increase in the aspect ratio of the nanotubes from 14.7 to 29.4 and 44.1. The simulation results demonstrate percentage increases of 15 and 29% in the stiffness of the CNT/PMMA composite with an increase in the aspect ratio of nanotubes from 14.7 to 29.4 and 44.1. The Young's moduli obtained for CNT/PMMA composites with CNTs aspect ratios of 29.4 and 44.1 are respectively 25 and 39% stiffer than a pure PMMA polymer material. Furthermore, the tensile strength of the CNT/PMMA composite is raised from 94.80 MPa to 101.82 and 111.61 MPa with increasing the aspect ratio of CNTs from 14.7 to 29.4 and 44.1. The results reveal that short CNT fibers with aspect ratios of 29.4 and 44.1 enhance the strength of PMMA polymer material as much as 19 and 30%, respectively. The higher composite stiffness and strength observed in simulations is rooted in the strengthening of CNT/polymer interfacial bonding with an increase in the aspect ratio of CNT fibers, which results in the increase of stress transfer between nanotubes and polymer chains. Table 6. Effect of CNTs length-to-diameter aspect ratio on the mechanical properties of PMMA polymer matrix reinforced by randomly distributed nanotubes with a weight fraction of 8 wt%. The RVE size is 50×50×50 nm3. 𝑳/𝑫 14.7 29.4 44.1 Young's Tensile strength modulus (GPa) 3.11 3.59 4.01 (MPa) 94.80 101.82 111.61 4. Conclusions The tensile fracture behavior of PMMA polymer matrix reinforced by short (5, 5) SWCNTs is investigated using a CG model. The strain-stress behavior of the polymer material predicted by 20 the CG model is verified with experimental results available in the literature, revealing an excellent agreement between results obtained from the CG model and experiments. The effect of the CNT weight fraction on the Young's modulus, yield strength, tensile strength and critical strain of the polymer composites is studied. The simulation results show that unidirectional CNTs can significantly enhance the mechanical properties of the nanocomposites. The CG results demonstrate that the Young's modulus and tensile strength of a PMMA matrix reinforced by 10- nm long (5, 5) CNTs respectively increase as much as 57% and 34% compared to the pure polymer at the CNT weight fraction of 10 wt%. CNT reinforcements with the weight fractions greater than 8 wt% increase the critical strain of CNT/PMMA composites compared to the pure polymer material, leading to a more ductile behavior. The mechanical properties of PMMA polymer matrix reinforced by randomly distributed CNTs are studied and the appropriate RVE size, representing the whole microstructure, is obtained. The effects of the weight fraction and the length-to-diameter aspect ratio of short CNTs randomly distributed in the polymer matrix on the mechanical properties of the CNT/PMMA composites are explored. The simulation results show that (5, 5) CNT reinforcements with aspect ratios of 29.4 and 44.1 and the same weight fraction of 8 wt% enhance the Young's modulus of PMMA composites by 25 and 39%, respectively. The strength of PMMA polymer matrix respectively increases as much as 19 and 30% by adding CNT fibers with aspect ratios of 29.4 and 44.1 and the same weight fraction of 8 wt%. Acknowledgments The authors thank the support of the European Research Council-Consolidator Grant (ERC-CoG) under grant "Computational Modeling and Design of Lithium-ion Batteries (COMBAT)". References 21 Kardos J. 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Elastic properties of reinforced solids: some theoretical principles. Journal of the Mechanics and Physics of Solids. 1963;11(5):357-72. [41] Silani M, Talebi H, Ziaei-Rad S, Kerfriden P, Bordas SP, Rabczuk T. Stochastic modelling of clay/epoxy nanocomposites. Composite Structures. 2014;118:241-9. 24 Figure captions Fig. 1. (a) Two monomers of a PMMA polymer chain and its CG model made of two P beads, and (b) a (5, 5) CNT with 10 rings of carbon atoms and its CG model made of two C beads. Fig. 2. (a) Initial configuration of an RVE of pure PMMA polymer with a size of 12×12×12 nm3 (b) true stress-true strain behavior of the polymer system subjected to a uniaxial tensile loading, (c) snapshot at the critical strain of 0.159, and (d) snapshot at strain of 0.198. The RVE contains 11400 beads, which are equivalent to 171000 atoms. Fig. 3. Tensile fracture of a CNT (3 wt%)/PMMA composite with 10-nm long (5, 5) CNTs aligned in the load direction: (a) initial configuration of the composite (b) the true stress-true strain behavior, (c) snapshot at the critical strain of 0.142, and (d) snapshot at the strain of 0.19. The size of unit cell is 12×12×12 nm3 that contains 11164 beads. The number of beads is equivalent to 169700 atoms. Fig. 4. Effect of the CNT weight fraction on the tensile fracture behavior of CNT/PMMA composites. The size of unit cell is 12×12×12 nm3 and the 10-nm long (5, 5) CNTs are aligned in the load direction. Fig. 5. A CNT (10 wt%)/PMMA composite with 10-nm long (5, 5) CNTs randomly distributed in three dimensional space. The size of unit cell is 20 × 20 × 20 𝑛𝑚3 that contains 50648 beads. The number of beads is equivalent to 775400 atoms. 25 Table captions Table 1. Parameters of the CG force field for C and P beads. Table 2. Mechanical properties of pure PMMA polymer matrix. Table 3. Mechanical properties of CNT/PMMA polymer composites reinforced by 10-nm long (5, 5) CNTs aligned in the load direction. Table 4. Effect of RVE size on the mechanical properties of PMMA matrix reinforced by 10-nm long (5, 5) CNTs randomly distributed in plane. The weight ratio of CNTs is set to be 10 wt%. Table 5. Effect of CNT weight fraction on the mechanical properties of PMMA polymer matrix reinforced by randomly distributed (5, 5) 10-nm long CNTs. The RVE size is 50×50×50 nm3. Table 6. Effect of CNTs length-to-diameter aspect ratio on the mechanical properties of PMMA polymer matrix reinforced by randomly distributed nanotubes with a weight fraction of 8 wt%. The RVE size is 50×50×50 nm3. 26
1803.03706	1	1803	2018-03-09T22:00:37	Electrode configuration and electrical dissipation of mechanical energy in quartz crystal resonators	[ "physics.app-ph", "cond-mat.mes-hall" ]	Mechanical resonators made with monolithic piezoelectric quartz crystals are promising for studying new physical phenomena. High mechanical quality factors ($Q$) exhibited by the mm-sized quartz resonators make them ideal for studying weak couplings or long timescales in the quantum regime. However, energy losses through mechanical supports pose a serious limiting factor for obtaining high quality factors. Here we investigate how the $Q$ of quartz resonators at deep cryogenic temperatures can be limited by several types of losses related to anchoring. We first introduce means to reduce the mechanical losses by more than an order of magnitude in a no-clamping scheme, obtaining $Q$-factors of $10^8$ of the lowest shear mode. We can exclude a wide coverage of aluminum metallization on the disk or bond wires as sources of dissipation. However, we find a dramatic reduction of the $Q$-factor accompanying an electrode configuration that involves strong focusing of the vibrations in the disk center. We propose a circuit model that accounts for the reduced mechanical $Q$-factor in terms of electrical losses. In particular, we show how the limiting factor for losses can be small ohmic dissipation in a grounding connection, which can be interpreted as electrical anchor losses of the mechanical device.	physics.app-ph	physics	Electrode configuration and electrical dissipation of mechanical energy in quartz crystal resonators A. J. Valimaa,1 J. T. Santos,1 C. F. Ockeloen-Korppi,1 and M. A. Sillanpaa1 1Department of Applied Physics, Aalto University, P.O. Box 15100, FI-00076 AALTO, Finland Mechanical resonators made with monolithic piezoelectric quartz crystals are promising for studying new physical phenomena. High mechanical quality factors (Q) exhibited by the mm-sized quartz resonators make them ideal for studying weak couplings or long timescales in the quantum regime. However, energy losses through mechanical supports pose a serious limiting factor for obtaining high quality factors. Here we investigate how the Q of quartz resonators at deep cryogenic temperatures can be limited by several types of losses related to anchoring. We first introduce means to reduce the mechanical losses by more than an order of magnitude in a no-clamping scheme, obtaining Q- factors of 108 of the lowest shear mode. We can exclude a wide coverage of aluminum metallization on the disk or bond wires as sources of dissipation. However, we find a dramatic reduction of the Q-factor accompanying an electrode configuration that involves strong focusing of the vibrations in the disk center. We propose a circuit model that accounts for the reduced mechanical Q-factor in terms of electrical losses. In particular, we show how the limiting factor for losses can be small ohmic dissipation in a grounding connection, which can be interpreted as electrical anchor losses of the mechanical device. I. INTRODUCTION Bulk Acoustic Wave (BAW) piezoelectric mechanical resonators are in use as the timebase in almost every dig- ital electronics device [1]. Besides oscillator use, the ap- plications of BAW range from scanning force microscopy [2, 3], filtering of analog circuits [4] and magnetic- resonance force microscopy [5, 6]; and prospects in me- chanical computation [7], mass sensors [8] and quantum limited position measurement [9, 10]. Some more exotic possible applications include gravitational wave detection [11], quantum information manipulation [12] and detec- tion of specific types of dark matter [13]. Thickness shear mode quartz resonators are a specific type of BAW where the piezoelectric crystal is usually an AT cut rectangular, square or disk plate with the dis- placement perpendicular to its thickness. The structure will resonate at frequencies for which the thickness is an odd multiple of half the acoustic wavelength. This type of resonator is extensively used as a sensor, for example for thin film deposition control, gas detection and liquid viscosity measurements. In these applications, it is often called the Quartz Crystal Microbalance (QCM), exten- sively studied after being proposed in Ref. [14]. An important challenge with most of the thickness shear mode sensors is the difficulty of obtaining spatial sensing homogeneity. Usually the mechanical mode is not homogeneous across the sensing surface, so the sensitivity varies depending on the location of the load. This is par- ticularly important in the CQM. For this reason there has been growing research interest in the optimization of the electrode geometry for uniform mass sensitivity. Some of the proposals include ring [15] or elliptical [16] electrodes, or variable thickness metallization [17]. Using plano-convex lens shaped quartz disks is a com- mon practice that enhances the sensitivity uniformity by confining the mechanical mode to the center of the res- onator plate, with the bonus of decreasing the clamping losses. In our earlier study [18] we introduced a design wit a set of large thin-film aluminum grounded spikes, extending from the edges to the center of the disk. The spikes were used to further focus the mechanical mode of a plano-convex crystal by enhancing the electrical field in the center. The focusing of the mode shape not only increases the spatial detection consistency but also the sensitivity in the smaller detection area, due to a bigger localized strain. The focusing can also be very useful for microfluidic / chemical / biological sensors, where reac- tive species are immobilized in a specific region of the substrate and the mode shape can be focused directly and exclusively below that active area. The motivation of the work in Ref. [18] was to operate a quartz disk resonator near the quantum regime of the mechanical vibrations of the lowest shear mode. In that design, a Cooper-pair transistor (SSET) [19, 20] is cou- pled in parallel to an LC tank circuit [21], forming an ef- fective cavity optomechanical setup. The strength of the interaction between microwave "light" and mechanical motion depends on the fraction of total piezoelectric sur- face charge that couples to the island of the SSET. The charge focusing scheme improves the overlap between the mechanical mode and the small SSET island area of a few square micrometers, and enhances the interaction by two orders of magnitude. In order to eliminate thermal noise in sensitive mea- surements, the quartz resonator needs to be cooled to the ground state of the mechanical vibrations. For the afore- mentioned resonator, the ground state corresponds to a very low temperature of about 0.2 mK, as a consequence of its low resonance frequency ≈ 7 MHz. This tempera- ture is well below the temperature achievable in a dilu- tion cryostat, however optomechanical sideband cooling [22] may be used to further reduce the mechanical mode temperature below that of the environment. The cool- ing power of such a technique is linked to several factors, in particular the coupling strength in the effective op- 2 (a) (b) (c) (d) (e) (f) FIG. 1: a) Photograph of the actuation and transmission measurement setup employed to acquire the resonance frequency and quality factor of the quartz resonator at temperatures ranging from 10 mK to 300 K. Two quartz disk devices are seen laying in lens-shaped supports. b) Top-view photograph of a quartz disk having an aluminium island (black circle) in the center. c) Side view of the measurement schemes for the three different device schemes studied in this work: bare quartz (bare), aluminum island (Al-i.) and charge focusing (CF). The schemes are differentiated by colour coding. d) Charge focusing electrode configuration. e) Mason's model equivalent circuit for a piezoelectric layer. f) Mason's model for top / bottom coating layer. The drawn impedances are acoustic impedances. tomechanical system, and the mechanical quality factor (Q). The focusing scheme with grounded spikes enhances the coupling, however, we found that Q ∼ 106, several orders of magnitude smaller than in principle possible in monolithic quartz resonators. One can thus suspect that the focusing scheme adds mechanical energy leak- ing pathways, thus strongly deteriorating the prospects of sideband cooling performance. In this work we investigate the mechanisms that cause the charge focusing setup to exhibit reduced Q, and how to minimize them. We present a model that in- cludes such mechanisms, which can also be extrapolated to other electrode configurations. Similar to [18], for the experimental work we will use 6 mm diameter, 200 µm to 250 µm thick plano-convex quartz disks with a funda- mental thickness shear mode around 7 MHz. We experi- mentally measure the dissipation due to charge focusing and thin film electrodes from room temperature down to mK temperatures. In contrast to Ref. [23], we find that dissipation due to uniform thin film electrodes on the quartz surface is negligible, and instead the Q fac- tor is limited by the electrical properties of the grounded charge focusing structures. II. MASON'S MODEL To study the dynamic behaviour of piezoelectric res- onators, it is practical to use simple models expressed in a circuit representation. There are a number of different models available, from which some of the most common are the Butterworth-Van Dyke (BVD) [24, 25], Mason's [26] and Krimholtz, Leedom and Matthae (KLM) [27]. We use Mason's model, which compared to BVD has the advantage of clearly separating the electrical and acoustic domains and relating the material's physical properties to distinct acoustic impedances. The Mason's model for a piezoelectric layer is shown in Fig. 1e for the thickness mode. The piezo resonator is modeled as an acoustic transmission line coupled to its electrical counterpart by an ideal transformer with the number of turns N proportional to the quartz elec- tromechanical coupling coefficient. Notice that N is a dimensional quantity, representing the transduction be- tween acoustic and electrical impedances. In the case of bare quartz, with no extra layers deposited on surfaces, the acoustic ports are shorted as depicted by the blue trace of Fig. 2. If another material is added on any of the surfaces, a module similar to the one shown in Fig. 1f Actuation pinCF & Al-i.~CFBare & Al-i. & CFBare & Al-i. SupportResonator~1 mm1NZT,QuartzZT,QuartzZS,Quartz-C0C0MeasureZT, AlZT, AlZS, Al33AP tP 33ASpikes tP C0h33 3 CSpikesh33 √ An ω ρnc33,n (cid:114) ρn (cid:18) Γtn c33,n (cid:19) iZ0,n tan 2 −iZ0,n csc (Γtn) Parameter C0 CSpikes N M Z0,n Γn ZT,n ZS,n TABLE I: Expressions for the parameters used in the FIG. 2: Schematic representation of the equivalent electrical circuits used to model the shear thickness mode response of a quartz disk resonator Mason's and Modified with different electrode configurations. The blue and red traces represent Mason's models. the classical Mason's model for the situation of a bare quartz and Al-island quartz, respectively. The green trace represents the modified Mason's model proposed in this work to model mechanical energy leakage due to ohmic losses in the charge focusing electrode layout. is added to the corresponding port on the Mason's piezo- electric representation. The red trace of Fig. 2 shows such representation for the quartz disk with the top sur- face coated. In our experiment, the coatings are the elec- trodes made out of aluminium. The relationships between the materials constants and the model parameters are shown in Table I [28], where 33 and h33 are the piezoelectric material's permittivity and deformation factor, c33,n and ρn the elastic stiffness and density of the n (quartz or Al)-layer material, AP and tP the piezoelectric disk surface area and thickness, An the n's layer surface area, and Z0,n represents the specific acoustic impedance of material n. It is important to notice that in order to take into account the different sources of intrinsic dissipation (dielectric, elastic, ...) 33, h33 and c33,n are defined as complex numbers, with the imaginary part being the corresponding loss tangent. The impedance ZS,n on the acoustic transmission line portrays the bulk elastic response of the n material to the acoustic wave, while ZT,n mimics the behavior of such wave at the interfaces with adjacent material layers. In the case under study, namely a quartz disk with Al met- allization on the top surface, the impedance matching between ZT of the quartz layer and the coating film to- tal equivalent impedance will define the effect of the film on the resonator. Impedance mismatch creates wave re- flections at the quartz / Al interface that can interfere constructively or destructively, depending on the phase shift and attenuation suffered by the acoustic wave while traveling through the different materials. The analysis of the standard Mason's representation of Fig. 2 for a quartz disk coated with aluminium shows that the total acoustic impedance in such case is ZA = ZS,Quartz + ZT,Quartz (cid:107) (ZT,Quartz + ZAl), where ZAl is the total acoustic impedance of the alu- minium layer given by ZAl = ZT,Al + ZT,Al (cid:107) ZS,Al = iρAlAAlνAl tan (ωtAl/νAl) and νAl is the complex acous- tic velocity in the aluminium. Depending on the thick- ness of the Al film, its effect on the piezoelectric reso- nance can be described either as mass damping in the regime with tP (cid:29) tAl, or as radiation damping in the regime tP (cid:28) tAl. In the mass damping regime with a thin film coating, tan (ωtAl/νAl) ≈ ωtAl/νAl, which yields ZAl = imAlω. In this case the aluminium mass acts as an inductance on the total acoustic impedance of quartz, so the reso- nance peak is shifted but the effect on the mechanical quality factor is negligible. This means loading of the mechanical resonator by ideal mass, with the film mov- ing synchronously with the quartz. In our experiment the quartz thickness tP ≈ 200 µm ... 250 µm and the alu- minium thin film thickness tAl ≈ 30 nm, and hence we expect to be deep in the mass damping regime. III. EXPERIMENTAL TECHNIQUES The lowest shear mode at ω0/2π ≈ 7 MHz is char- acterised in the transmission scheme of Fig. 1c. The transmission setup allows fast and accurate determina- tion of the resonance peak even when the mode frequency is changing with temperature, and the system is only weakly loaded by the measurement ports. The quartz disk resonator lies unanchored on top of a concave quartz lens with the convex part on the bottom, maintaining the central region of the disk suspended. In 1NZT,QuartzZT,QuartzZS,Quartz-C0C0ZT,AlZT,AlZS,Al1MZEleQUARTZALUMINIUMMason's Modelfor Bare QuartzMason's Model for Al-island QuartzModified Mason'sModelMeasure4 (a) (b) FIG. 3: a) The magnitude characteristics of the transmission coefficient of the mechanical mode is illustrated at the base temperature (left column) and above 5 K (right column) for: bare quartz (top row), Al coated quartz (center row) and one of the avoided crossing measured for the charge focusing electrode configuration (bottom row). The measurement data (blue dots) is fitted in the complex plane, but projected on the magnitude plot (solid red line). The strong attenuation in the lines is compensated by a LNA that provides an amplification of 56 dB. b) Thermal drift of the mechanical resonance peak for the CF electrode configuration caused by the change of the quartz material coefficients as a function of temperature. It is possible to observe several other weakly coupled modes to cross (in fact, exhibiting small avoided crossings) the main peak at temperatures above 40 K, which, as observed in Fig 4 and 5, impact negatively the quality of the acquired data above such temperature. the Al-coated quartz electrode configuration of Fig. 1b, there is an Al-island of 2 mm diameter and 30 nm thick- ness evaporated on the top surface of the piezo disk. In this configuration there are no bonding wires connected to the resonator, but it is actuated and measured through a top port (SMA pin of 1 mm radius at roughly 200 µm distance) and bottom electrode, as seen in Fig. 1c. The bottom electrode lies on the concave support chip, that is not fully metal-covered to control the external cou- pling through the measurement port. The same method of actuation is used for the the bare quartz sample. The charge focusing (CF) design requires grounding of the focusing spikes (Figs. 1c and 1d) and below the res- onator for proper functioning. Hence, the supporting lens structure is fully metalized, grounded, and wire-bonded to the quartz disk. In separate measurements, we have verified that the bond wires near the disk edges do not affect the quality factor of the resonator. The transmission measurement setup involves the ports on top of the resonator and on-chip (charge fo- cusing scheme) or in the bottom chip (for bare and Al- coated quartz), as depicted in Fig. 1c. The resonance peak is tracked from room temperature to base tempera- ture of the refrigerator. The tracking algorithm needs to account for a drift of 10 kHz in the resonance frequency, that is roughly 105 times the linewidth. The resonance line profiles are fitted in the complex plane by a model that is derived from a 2-port RLC-circuit. The model is also used to evaluate the external couplings of the ports from the reflection parameters, allowing to separate the total quality factor (QT ot) into internal (Qint), and the external quality factor (Qext) set by the measurement ports. We note that apart from the losses due to the measurement ports, Qint includes all losses, also the elec- trical losses in the charge focusing scheme as discussed below. Our model also allows us to consider several over- lapping modes. The characteristics of the transmission peak data and the fitting are illustrated in Fig. 3a for the three configurations at the base temperature (≈ 10 mK) and at high temperatures above 5 K. Figure 4 shows the measured quality factor of the three aluminium metallization configurations under study. One can see that, as expected from the minimal effect of the thin Al layer, the quality factors for bare quartz and the Al-island quartz exhibit similar temperature depen- dence. However, the charge focusing design has a much lower Q than the other two configurations at tempera- tures below ∼ 10 K, while at higher temperatures all the configurations show roughly similar Q values. The sharp dips in Q above ∼ 40 K result from crossing of the main mode with other weakly coupled modes that have an opposite temperature dependence (Fig. 3b) of the resonance frequency. The fact that the crossing spu- rious modes possess lower Q factors, is reflected in the broader linewidths of the hybridised modes. Examples of split peaks are shown in Fig. 3a with a coupling in the order of 200 Hz. The charge focusing case will be discussed below, and now we focus on the bare quartz disk and Al-island quartz disk configurations. The measured internal quality fac- tors of the bare and Al-island coated quartz at the base temperature are approximately 80 million and 100 mil- lion, respectively. The Al-island quartz, somewhat sur- prisingly, exhibits the best Q. We believe this is due to small variations from chip to chip in some dissipa- tion channels, which becomes more evident at lower tem- peratures when other dissipation decreases. Below 100 mK the Q factor saturates, which can be either due to insufficient thermalisation of the driven resonator, or a temperature-independent dissipation source. We use the material parameters of Table II and apply them to the calculation of the Mason's equivalent circuit parameters of Table I. The literature usually provides the material coefficients only for room temperature. To check the model at low temperature we fit the measurements of the bare quartz at base temperature to the circuit repre- sented by a blue trace in Fig. 2 to find the loss tangents. Then we use the fitted quartz complex coefficients to cal- culate the quality factor expected for the mass-loaded Al-island quartz disk (circuit of Fig. 2, red trace). The quartz coefficients fitted at the base temperature show the loss tangents for the complex permittivity and stiff- ness approximately two orders of magnitude lower than the literature values at room temperature. This is qual- itatively reasonable, because at lower temperatures the dielectric and elastic losses are expected to be smaller. We thus find that the 30 nm thick aluminium layer is thin enough to keep the loading of the quartz res- onator close to the ideal mass damping region, where the surface coating losses are small or negligible. Since the charge focusing design of Fig. 1d has roughly simi- lar amount of metalization, the lower quality factors ob- 5 Literature Value [29] (Room Temperature) 5.3 · (1 − 2 × 10−3i) Fitted Value (Base Temperature) 5.3 · (1 − 4.0 × 10−5i) 2.94 · (1 + 4.5 × 10−6i) 2.94 · (1 + 8.0 × 10−8i) 1.67 · (1 + 2.9 × 10−5i) 1.67 · (1 + 2.9 × 10−5i) 2650 2650 8 · (1 + 1 × 10−2i) 8 · (1 + 1 × 10−2i) 2700 2700 33 (10−11 F/m) c33,Quartz (1010 N/m2) h33 (109 V/m) ρQuartz (Kg/m3) cAl (1010 N/m2) ρAl (Kg/m3) TABLE II: Complex material coefficients of AT cut quartz and aluminium at room temperature and the values obtained from the fit of the Mason's equivalent circuit (Fig. 2, blue trace) to the experimental results shown on Fig. 4 for bare quartz at base temperature (T ≈ 10 mK). served with charge focusing cannot result from coating losses in the electrode metalization, in contrast to the findings in Ref. [23]. IV. MODIFIED MASON'S MODEL We continue the discussion on the mechanical Q values of the charge focusing electrode configuration (Fig. 1d). As shown in Fig. 4, the internal Q for the focusing con- figuration below ∼ 100 mK is more than an order of magnitude smaller than in the other two setups and con- stant below T ≈ 1 K. At T ∼ 1.2 K, we observe a sharp step down, followed by a plateau and then fast drop up to T ≈ 20 K. At higher temperatures Q increases again and settles down to values similar to the other two configura- tions. The sharp step down of Q at T ∼ 1.2 K matches the superconducting critical temperature of aluminium, best seen in Fig. 5, an indication that the low Q of the focusing design may be connected to the conductivity of the aluminium thin-film coating. Next we discuss in detail the hypothesis that the re- sistance in the Al coating, or generally in the electrical part of the circuit, can be the source of low mechani- cal Q factors. The strain-induced piezoelectric surface charge density in the vicinity of the Al coating capaci- tively couples to it, creating a charge distribution on the aluminium layer. If such layer is connected to the ground, for instance with wire bonds as in our case, the presence of any electrical resistance between the coupled charges and the ground creates a potential difference across the aluminium thin-film. The potential difference will drive the charges to the ground electrode, dissipating energy in the process. If the resistance to ground is too big (eg: coating layer not connected to ground; non-conductive 6 FIG. 4: Dependence of the internal mechanical quality factor on temperature for the three metallization configurations studied in this work: bare quartz disk (blue dots), quartz disk coated with an aluminium thin film island (red diamonds), and quartz disk coated with an aluminium thin film in a charge focusing configuration (green triangles). (cid:40) (cid:40) coating material) the charge current is hindered and no dissipation occurs. Similarly, zero resistance implies no losses, and in between, there is expected to be a regime of rough impedance match and maximum losses. The leakage of mechanical energy to the electrical do- main through the coating layer is not accounted for by the classical Mason's model. We propose a modification to the model in order to be able to describe the low Q factors measured in the charge focusing configuration. In a way similar to the Mason's representation of a coupling between the quartz vibrations and the external measure- ment circuitry (Fig 1e), we include an ideal transformer to represent the coupling to the electric domain in the aluminium layer. As with the measurement circuit, the transformer winding ratio is proportional to the quartz electromechanical coupling and, in the present case, the area of the grounded spikes. The modified Mason's model is shown by the green trace of Fig. 2 and the winding ra- tio M can be calculated with the expression from Table I. A. Temperature dependence of the electrical resistivity of aluminium We turn the discussion to estimation of the electrical impedance ZEle (see Fig. 2) of the circuit including the charge focusing spikes and ground connection. We start by assuming there is a temperature-independent resis- tance R0 in the ground connection. We also assume that the Al is pure enough to have a sharp superconducting transition. For temperatures above the aluminium su- perconducting critical temperature, TC,Al = 1.2 K, there is also a contribution from the aluminium film resistivity ρele,Al. Hence, ZEle(T ) is given by: ZEle(T ) = R0 R0 + Gρele,Al(T ) , T < TC,Al , T > TC,Al (1) where G is a geometric factor converting the resistivity of the aluminium coating to the average resistance expe- rienced by the charges traveling through the spikes. To calculate the aluminium film resistivity above its superconducting critical temperature we use Matthiessen rule: ρele,Al(T ) = 0 ρR + ρP h(T ) , T < TC,Al , T > TC,Al (2) where ρR is a temperature-independent term arising from the electron scattering on the material's defects and im- purities, and ρP h is a temperature-dependent term due to electron-phonon interactions. Some studies have found that the main electron- phonon scattering mechanisms in nanostructured poly- crystalline thin films are the scattering from intragran- ular atoms or atoms at grain boundaries, or at surfaces [30–32]. Both mechanisms are inversely proportional to the grain size of the material, which in thin films is ap- proximately equal to the film thickness. As a conse- quence, our Al layer has a much higher resistivity than expected from bulk Al. According to Ref. [33] the con- tribution of the electron-phonon interaction to the resis- Value 6.69 × 10−8 Ω m 2.97 × 10−18 4 6.39 × 10−15 3 ρR a m b n TABLE III: Aluminium parameters for the calculation of the resistivity at different temperatures, see Eq. (3). Values from [33]. tivity of the thin film of Al can be calculated from ρP h(T ) = aT m + bT n , (3) where the values for the parameters a, b, n and m are given in Table III. Here, aT m denotes the resistivity con- tributed by intragranular atoms and bT n represents the resistivity related to grain boundaries or surfaces. B. Mechanical quality factor of the charge focusing electrode configuration The electrical impedance ZEle to ground experienced by the charges can be estimated for the case of the Al thin-film using Eqs. (1), (2), (3) and the values given in Table III. Two of the parameters are used to fit the model to the experimental data: The 0 K residual resistance R0, and the geometric conversion factor G in Eq. (3). Figure 4 shows that the temperature dependence of the mechan- ical Q in the charge focusing electrode configuration has a plateau when the aluminium is in the superconductive state, immediately followed by a sharp drop at T > 1.2 K. Those two features are used to fit the two free parameters R0 and G. When aluminium is in the superconducting state ZEle(T < 1.2 K) ≈ R0, and R0 can be estimated by finding how large ZEle is needed in the modified Ma- son's model to obtain the plateau at T < 1.2 K. We obtain that R0 ≈ 1 Ω and, as previously mentioned, it likely arises from resistance sources like the small con- tact points in wire bonding, oxide formation at the alu- minium - wire bond interface. The parameter G can be estimated from the step height observed at 1.2 K. At this temperature ρP h ≈ 0; hence from Eqs. (1) and (2) we obtain ρele,Al = ρR and G = (ZEle(1.2 K) − R0) /ρR. To find ZEle(1.2 K) we calculate the impedance needed in the modified Mason's model to reproduce the Q factor measured in the plateau above T > 1.2 K. The value of G obtained from the fitting is ≈ 6 × 106 m−1. In the focusing configuration (see Fig. 1d) the mechan- ical mode is mainly focused in the center of the disk, thus most of the piezo charges that couple to the aluminium will arise at the tip of the spikes, and travel LSpikes ≈ 7 3 mm to the grounded bond wires. The average cross sec- tion area of the metallization experienced by the charges traveling along the spikes is We × tAL ≈ 1 mm × tAl. We can hence roughly estimate the expected value of G ∼ Le/(tAlWe) = 108 m−1. The difference to the value obtained above indicates that a considerable number of electrons still couple to other regions of the spikes other than the tips and travel shorter distances to ground. Figure 5 shows a detailed view of the data in 4 for the charge focusing electrode configuration. The data is overlaid with three different theoretical curves: in the dashed curve the variation of the quartz intrinsic losses is neglected and the ohmic losses of aluminium are taken into account with the modified Mason's model; in the dotted curve the intrinsic quartz losses are taken into account and the ohmic losses are neglected by considering ZEle = ∞ ; in the dash-dotted curve both intrinsic quartz losses and ohmic losses are taken into account using the modified Mason's model. We will next discuss in detail the three theoretical curves. For the computation of the dashed curve the quartz material coefficients were considered constant in tem- perature, so the only source of temperature-dependence on the resonator dissipation comes from the aluminium spikes' ohmic losses. The drop of Q with the increase of temperature for the bare quartz design, seen in Fig. 4, however, demonstrates that the intrinsic dissipation of quartz is not constant in temperature, explaining the dis- crepancy between the dashed line and the experimental data of Fig. 5. The temperature dependence of the quartz material coefficients needs to be taken into account for properly modeling the system. For that purpose, we assume that the only coefficient changing with temperature is c33 (specifically the imaginary part of c33, the correspond- ing loss tangent) and calculate it for each temperature through the fit of the classic Mason's model to the ex- perimental data for bare quartz and Al coated quartz dis- played in Fig. 4. To minimize the aforementioned prob- lems with variability of c33 from chip to chip, the value used for subsequent data analysis is the average for each temperature of the values calculated from the two fits. The bare quartz measurement data is difficult to inter- pret above T ≈ 100 K because of several avoided cross- ings, clearly seen in Fig. 3b. The c33 for those temper- atures was extrapolated from the fit of a curve to the temperature range between 20 K and 80 K. The dotted line of Fig. 5 represents the modified Mason's model cal- culated using the fitted values of c33 and disregarding the ohmic losses by considering ZEle = ∞, effectively reduc- ing the modified Mason's model to the Al coated classic Mason's model. The dash-dotted line takes into account the tempera- ture dependence of both the ohmic and quartz intrinsic losses as discussed. This model provides the best match to the experimental data for the charge focusing setup, showing that in such electrode configuration both dis- sipation mechanisms (quartz's intrinsic mechanical dis- 8 FIG. 5: Measurement of the temperature dependence of the total mechanical quality factor for the bare quartz and charge focusing electrode configurations. The lines display the theoretical curves obtained by using the modified Mason's model of Fig. 2 while considering: (dashed) c33 of quartz constant in temperature and equal to the value fitted for the base temperature shown in Table II; (dotted) c33 of quartz temperature-dependent, estimated for each T from the fitting of the classic Mason's model to the bare quartz data of Fig. 4, and ZEle = ∞, what reduces the modified model to the classic Mason's model; (dash-dot) c33 of quartz temperature-dependent and estimated for each T from the fitting of the classic Mason's model to the bare quartz data of Fig. 4. sipation and electrical ohmic dissipation) play a role in determining the total dissipation of the mechanical res- onator. The slight difference between the dash-dotted curve and the experimental results at ≈ 10 K is likely as- sociated to uncertainty in the definition of the material coefficients for each individual chip. At very low temper- atures, below 6 K, the quartz intrinsic loss is negligible and the total dissipation is dominated by ohmic losses. The impedance of the spikes at room temperature is ZEle(300 K) ≈ 3 Ω. If instead of aluminium we would use a more resistive coating material, the model predicts that when ZEle ≈ 20 Ω there is impedance matching between N 2ZEle and ZT,Al. For impedances above 20 Ω the cur- rent will flow preferentially through the ZT,Al branch of the circuit of Fig. 2 and the impact of the spikes electrical impedance on the Q factor will decrease. For ZEle much larger than the matching value, the ideal transformer that couples the electrical domain of the aluminium layer to the quartz acoustic mode will act almost as an open line, making our circuit similar to the standard Mason's scheme. Materials with higher resistivity than aluminium may mitigate the effect of mechanical energy leakage to the electric domain. V. CONCLUSIONS In this work we studied the quality factor of monolithic quartz disk piezoelectric resonators with different elec- trode configurations, and at temperatures ranging from deep cryogenics (10 mK) up to room temperature. We found that even with substantial electrode coverage, it is possible to achieve quality factors up to ∼ 108. The extra dissipation introduced by mechanical losses in thin- film of aluminium coating is negligible, a fact that can be explained by the small thickness of the aluminium layer (30 nm) compared to the quartz disk (200 µm to 250 µm). The use of a charge focusing design for the electrodes, where sharp grounded aluminium spikes extend from the edges of the disk to its center, has an effect to drastically decrease the mechanical quality factor down to around 106. We suggest a model where the surface piezoelec- Bare quartzAl-islandCharge focusing Modified Mason's Model, c33(T)=c33 fit(T) (Theory)Modified Mason's Model, no ohmic loss c33(T)=c33 fit(T) , ZEle= (Theory) Modified Mason's Model, c33(T)=c33(0K) (Theory)tric charge density can couple capacitively to the spikes. The charges arising at the spikes will create a current to ground, dissipating energy in the non-negligible re- sistances at the aluminium thin-film. This dissipation mechanism represents a leakage of mechanical energy to the electrical domain. We suggest a modification to the Mason's model that takes into account the aforementioned dissipation mech- anism, which is not accounted for by the standard Ma- son's model. In our model we add an ideal transformer to the equivalent circuit of the aluminium metallization to represent the coupling between the mechanical mode and the spikes. The winding ratio of the transformer depends on the geometry of the spikes and on the electromechan- ical coupling factor of the quartz disk. The behavior predicted by our modified model agrees very reasonably with the experimental results obtained for the mechani- cal quality factor of the charge focusing design. The model indicates that even when the Al film is in the superconducting state, there is a small ohmic loss between the metalization and the ground, corresponding to a resistance around 1 Ω. We associate such losses to resistance in the contact between the bond wires and alu- minium layer, or oxidation of the materials. Minimiza- tion of the aforementioned residual loss would be highly beneficial for cryogenic experiments that use focusing of the mechanical mode to achieve high electromechani- cal coupling, while the same time need large mechanical quality factors. For low temperatures the ohmic losses dominate the dissipation of the mechanical resonator. 9 The increase in temperature increases the quartz intrin- sic loss, evening its contribution to the total dissipation with the ohmic losses. We can conclude that the importance of the electrical dissipation channel is mostly relevant when high-Q piezo- electric resonators are coated with low-resistivity materi- als and/or patterns that create the opportunity for non- zero low impedance to ground. Metals that at room tem- perature have enough resistivity to suppress the charge current from the spikes to ground may become a source of losses at cryogenic temperatures, where resistivities are usually lower. The energy leak can be lessened by minimizing the impedance to ground from the coating layer, or eliminated by using coating films having a high electrical resistivity. 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1707.03677	1	1707	2017-07-12T12:40:46	A wireless triboelectric nanogenerator	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	We demonstrate a new paradigm for the wireless harvesting of mechanical energy via a 3D-printed triboelectric nanogenerator (TENG) which comprises a graphene polylactic acid (gPLA) nanocomposite and Teflon. The synergistic combination of eco-friendly PLA with graphene in our TENG exhibited an output voltage > 2 kV with an instantaneous peak power of 70 mW, which in turn generated a strong electric field to enable the wireless transmission of harvested energy over a distance of 3 m. Specifically, we demonstrate wireless and secure actuatation of smart-home applications such as smart tint windows, temperature sensors, liquid crystal displays, and security alarms either with a single or a specific user-defined passcode of mechanical pulses (e.g., Fibonacci sequence). Notably, such high electric output of a gPLA-based TENG enabled unprecedented wireless transmission of harvested mechanical energy into a capacitor, thus obviating the need for additional electronics or energy sources. The scalable additive manufacturing approach for gPLA-based TENGs, along with their high electrical output can revolutionize the present method of harnessing the mechanical energy available in our environment.	physics.app-ph	physics	A wireless triboelectric nanogenerator Sai Sunil Kumar Mallinenia, Yongchang Donga, Herbert Behlowa, Apparao M. Raoa,, Ramakrishna Podilaa,b,, a Clemson Nanomaterials Institute, Department of Physics and Astronomy, Clemson University, Clemson, SC 29634, USA. b Laboratory of Nano-biophysics and COMSET, Clemson University, Clemson, SC 29634, USA. *Corresponding author: [email protected], [email protected], Phone: 864-656-4447, Fax: 864-656-0805. Keywords: Triboelectric nanogenerator; Wireless charging; Smart home applications; Security applications Abstract: We demonstrate a new paradigm for the wireless harvesting of mechanical energy via a 3D-printed triboelectric nanogenerator (TENG) which comprises a graphene polylactic acid (gPLA) nanocomposite and Teflon. The synergistic combination of eco-friendly PLA with graphene in our TENG exhibited an output voltage > 2 kV with an instantaneous peak power of 70 mW, which in turn generated a strong electric field to enable the wireless transmission of harvested energy over a distance of 3 m. Specifically, we demonstrate wireless and secure actuatation of smart-home applications such as smart tint windows, temperature sensors, liquid crystal displays, and security alarms either with a single or a specific user-defined passcode of mechanical pulses (e.g., Fibonacci sequence). Notably, such high electric output of a gPLA-based TENG enabled unprecedented wireless transmission of harvested mechanical energy into a capacitor, thus obviating the need for 1 additional electronics or energy sources. The scalable additive manufacturing approach for gPLA-based TENGs, along with their high electrical output can revolutionize the present method of harnessing the mechanical energy available in our environment. 1. Introduction Triboelectricity is emerging as a possible power source for portable electronics [1-6], sensors [7–18], and other wearable devices [19–24]. Triboelectric nanogenerators (TENGs) harness the contact induced electrostatic potential generated across the surfaces of two dissimilar materials to convert waste mechanical energy into usable electrical energy. Given that many materials such as metals, silk, wool exhibit triboelectrification, the choice of electrode materials in TENGs is virtually unlimited [25,26]. The materials pair in a TENG is often chosen so as to maximize the potential drop while allowing easy flow of charges (i.e., less electrical resistance) to harvest usable power. In the last five years, a series of proof-of- concept studies has demonstrated TENGs using pairs of different patterned nanomaterials and polymers. Notwithstanding this progress, an important question remains unaddressed in TENGs. How to realize eco-friendly and high-performance TENGs without the need for the devices to be hardwired to the TENG? It is thus imperative to identify earth-abundant, biodegradable, and recyclable materials (e.g., biopolymers) that are suitable for realizing sustainable and eco-friendly TENGs with high output electric fields for wireless transmission of harvested energy. The crystallographic symmetry is critical in determining the tribo- and piezo-electrical properties of materials [27]. For example, the piezoelectric tensor vanishes for any material or crystal with a centre of symmetry, implying that tribo- and piezo-electrification is inadequate for effectively polarizing centrosymmetric crystals. Using crystal symmetry, Fukada et al. established that effective polarization could be achieved in biopolymers when polar groups 2 are linked to one of their asymmetric carbon atoms [28,29]. Polylactic acid (PLA) [30], which is a plant-derived biodegradable linear aliphatic thermoplastic polyester, contains two asymmetric carbon atoms that facilitate a high degree of polarization upon tribo-electrification (see supplementary Fig. S1) [31]. Unfortunately, the high electrical resistance makes PLA unsuitable as a TENG electrode. Here, we resolve this challenge by using electrically conducting graphene-PLA (gPLA) nanocomposites to additively manufacture sustainable TENG electrodes with high output voltages (>2 kV) and high output powers (> 70 mW). Graphene is an ideal filler for improving the electrical conducting properties of PLA because it: 1) can store injected electrical charges with a decay time ~40 mins,[30] which is an order of magnitude higher than decay times in oxides, 2) leads to high electrical conductivity (volume resistivity ~0.6 ohm-cm) at low filler content ~15 wt.%, and 3) improves the mechanical robustness of PLA [32]. In this article, we describe novel additively manufactured gPLA nanocomposite-based high- performance TENGs that not only convert mechanical energy into electricity but also wirelessly (W-TENG) transmit the generated energy without the need for either additional circuitry or external electrical power. A 3D-printed gPLA nanocomposite on a polyimide (or Kapton) film was used with a complementary polytetrafluoroethylene (PTFE or Teflon) sheet to fabricate a gPLA-based TENG. When actuated by simple mechanical motions such as hand tapping, the W-TENG generated high output voltage (> 2 kV) and peak power (> 70 mW at 10 MΩ). An estimated force from hand tapping was ~ 120 N (see supplementary information) and was applied at an average frequency of ~ 3 Hz to activate W-TENG. Furthermore, the high output voltage, which resulted in a high electric field at the end of the copper ribbon (attached to the gPLA electrode, Fig. S2) was effective in enabling wireless transmission of the electric field over a distance of 3 m. Unlike conventional earlier studies in which a TENG was hardwired to power a commercial wireless transmitter [33,34], a W-TENG can wirelessly control a variety of electronic gadgets (e.g., electrochromic windows, temperature sensors, 3 liquid crystal displays, and security alarms for smart-home applications) in real time, obviating the need for additional either amplification or commercial wireless transmitters. Unlike state-of-the-art wireless transmitters with external power systems (e.g., through batteries), W-TENGs represent a renewable self-powered alternative that can activate an electronic circuit by simple mechanical motion such as hand tapping. Lastly, we also demonstrate that the electrical energy generated from mechanical energy imparted to a W- TENG can be wirelessly transmitted and stored in a capacitor. All the above attributes make W-TENG a viable green alternative for wirelessly powering the internet of things (IoT). 2. Materials and methods 2.1 Construction of a W-TENG A Prusa i3 3D printer was used for additively manufacturing TENGs using gPLA filaments purchased from Graphene Supermarket. For comparison, a similar TENG was manufactured using PLA filaments. A borosilicate heat-print-bed glass maintained at 70 °C was used as the bottom supporting substrate (Fig. 1). A thin polyimide film was first attached to the top surface of the bed glass, followed by extrusion of the PLA or gPLA filament at 220 °C and layer-by-layer printing on the polyimide film through the fused deposition model. Due to the characteristic that PLA and gPLA have poor affinity for glass, a buffer sheet of polyimide was intentionally used in the 3D printing process, otherwise the printed features would warp and peel off the bottom bed glass substrate. A copper ribbon was attached to the gPLA electrode to serve as a wireless transmitter, and a Teflon sheet (purchased from ePlastics) having a thickness of 0.25 mm was used as the top electrode (Fig. S2). 2.2 Characterization of a W-TENG Micro-Raman spectroscopy was performed on the gPLA electrodes using a Renishaw micro- inVia spectrometer (514.5 nm Ar+ ion laser excitation, 50× objective and Peltier-cooled 4 CCD). Scanning electron microscopy (SEM, Hitachi S4800) and thermogravimetric analysis (TGA, Q500 system from TA instruments, in flowing nitrogen) were also performed, and the output TENG voltages were measured using a Yokogawa DL 9710L digital oscilloscope. 2.3 Wireless signal processing circuit (WSPC) A WSPC was designed in-house, a description of which is provided later in Fig. 6, was used for the wireless detection of TENG output signals. Our WSPC consists of a preamplifier (LMC6001), an intermediate amplifier (TL062), and a pulse-shaping integrated chip or IC (NE555). A high pass filter with a 150pF series capacitor (needed to mitigate the interference from the surrounding electric fields) and a 100 MΩ resistor (characteristic roll-off frequency of ~5 Hz) was used as the high impedance input to the preamplifier. The preamp was configured with a gain of ~2.2. Although TENGs produce both negative and positive pulses upon pressing and releasing, the amplitude of the positive voltage pulse in our case was ~4- fold larger than the negative pulse. Thus, only the positive pulse was retained from the preamp output, which was passed through a Si-diode for signal rectification. The intermediate amplifier was configured as an inverting amplifier with unity gain to make the rectified signal compatible with the pulse shaping IC's trigger input. Finally, 555 timer the pulse shaping IC (see Fig. S3) was configured to operate in a one-shot monostable mode, which upon being triggered produces a 12 V square pulse of ~0.2 s duration (a signal compatible with the toggling relay trigger input). The 0.2 s duration of this one-shot output eliminates any input pulse "bounce" (from the oscillation of TENG electrode after mechanical activation) that might be present in the time window of 0.2 s. The output duration of the pulse from the 555 timer can be adjusted by modifying the values of the capacitor and resistor connected in series between pins 1 and 8. When the negative trigger pulse from the inverting amplifier is applied to pin 2 of the 555 timer, the voltage across the capacitor (4.7 µF attached to 39 KΩ; RC ~0.2 s) increases exponentially for a period of ~0.2 s. Subsequently, the output 5 drops to a "low" as depicted in Fig. S3. Thus, the TENGs in this study were designed to transmit wireless signals with a minimum spacing of ~0.2 s. 3. Results and discussion In this study, gPLA feedstock was heated above its glass transition temperature (Tg= 55 °C) and extruded through the 3D printer nozzle (Fig. 1a) to rapidly print multiple gPLA layers (~16 x 18 cm2) on a thin polyimide (or Kapton) film (thickness ~60 µm) attached to a borosilicate heat-print-bed glass. This assembly constitutes the bottom electrode for the TENG. Narrow strips of Kapton tape were then used to attach a Cu ribbon to the printed gPLA, and a Teflon sheet to the bottom electrode to yield a W-TENG (Fig. 1c). The high electronegativity was the rationale for using Teflon, which can readily accept electrons when rubbed against other surfaces [25]. In the W-TENG depicted in Fig. 1c, the buckling of the top Teflon sheet resulted in a natural air gap (~1 mm) between the top and bottom electrodes obviating the need for additional spacers that are often used in vertical TENGs. As shown in Fig. 2a, the Raman spectrum of the gPLA electrode showed the characteristic graphitic, or G-band (~1585 cm-1), along with the disorder, or D-band (~1350 cm-1), and its overtone 2D band (~2700 cm-1).[35,36] Note the evidence of the CH3 symmetric stretching modes of PLA ~2900 cm-1 in addition to the Raman features of graphene [37]. A Thermogravimetric analysis (TGA) of the PLA and gPLA electrodes showed a clear decrease in weight at temperatures ~270 °C and ~340 °C respectively, due to the decomposition of PLA (Fig. 2b). The presence of graphene in the PLA matrix clearly increased the structural stability of the gPLA electrode. Similar enhancements in the structural composition were observed with the addition of carbon nanotubes (CNTs) into the PLA polymer matrix [32]. Unlike PLA electrodes, gPLA electrodes showed ~15-17 % weight retention above 400 °C due to the presence of graphene, which was confirmed by the Raman spectrum of gPLA electrode subjected to 800 °C during TGA (Fig. S4). 6 The W-TENG is initially in a neutral state with no potential difference across the electrodes. The top electrode is negatively charged when it is "pressed" against the bottom electrode by a mechanical force, such as hand tapping (see Fig. 3a-b). The top surface of gPLA is oxidized leading to a surface polarization [38,39]. Upon releasing the mechanical force, the negatively charged Teflon sheet relaxes to its initial configuration, and further polarizes the bottom gPLA electrode leading to a measurable mean potential difference > 1.5 kV (Fig. 3c-e). Such enhanced output voltages were not observed when the bottom electrode was printed using a PLA filament (Fig. S5). While the surface dipoles on PLA become oriented under the influence of negatively charged Teflon, the dipoles within its bulk remain randomly oriented due to the lack of charge flow and hindered mobility of polymer macromolecules (Fig. 4a) [38]. The voltage increase in gPLA electrode based TENG is due to the presence of graphene, which extends the PLA polarization deeper into the bulk by facilitating charge flow (see Fig. 4b). Similar enhancement in TENG performance was observed upon addition of reduced graphene oxide (rGO) in polyimide composite. Such enhancement has been attributed to additional charge trapping sites created by graphene in the dielectric matrix [40]. To further confirm this assertion, we etched the gPLA electrode surface using dicholorethane to remove the top layer of PLA on the surface of the electrode. The CH3 stretching modes ~2900 cm-1 which were present in the as-printed gPLA electrode, were absent in the Raman spectrum of dichloroethane-treated gPLA electrode (Fig. S6), thus confirming the removal of the PLA from the surface and exposure of the graphene. The W-TENGs with dichloroethane-treated gPLA electrodes, however, showed ~1.8 kV that is ~33 % lower than the voltage exhibited by as-printed gPLA electrode (2.7 kV, Fig. S7 and S11). A detailed electrical characterization of the W-TENGs hardwired to varying loads is presented in the supplementary information (Fig. S8a). More importantly, although no significant current was drawn from the PLA electrodes, the improved electrical conductivity 7 of gPLA electrodes facilitated a current flow with a peak power ~70 mW (Fig. S8b). The high electrical output of the W-TENG readily powered ~300 commercial green LEDs (Figs. 5a and 5c) and also rapidly charged a 10 µF capacitor to ~30 V within 2 minutes (Figs. 5b and 5d). Note that the focus of this study is to demonstrate the use of W-TENGs in self-powered wireless applications. One notable by-product here was a determination that the output characteristics depicted in Fig. S8 are superior to the characteristics of TENGs reported in the literature [6]. Clearly, the high electric field generated by the W-TENG supplants the old wireless transmission model that requires an external signal transmitter. Any mechanical action or pulse placing the top Teflon sheet in contact with the bottom gPLA electrode generated a large potential difference (> 2 kV at the device) with an associated electric field instantaneously sensed over a distance of ~3 m. The gentle hand tapping of the W-TENG was detected in real-time as a single voltage pulse by an oscilloscope equipped with a custom-built WSPC (Figs. 6a and 6b) situated ~3 m from the W-TENG. Unlike previous TENG demonstrations in which the TENG was merely used to charge batteries or capacitors to power commercial wireless signal transmitters our W-TENG is unique in that it acts both as the electrical energy generator and the signal transmitter [33,34]. When the W-TENG was hand tapped in a Fibonacci sequence (i.e., 1, 1, 2, 3, 5, and 8 taps) with a ~1 s gap between each cycle, the mechanical pulses were wirelessly detected by the WSPC as an instantaneous voltage spike with the same periodicity as the input pulses (Fig. 6c and supplementary video S1). Such a real-time response allows the self-powered W-TENGs to wirelessly transmit signals (akin to Morse coding) for detection via simple and inexpensive electronic receivers. Thus, the W-TENGs, which function as self-powered wireless controllers are useful in smart- home applications (e.g. lights, temperature sensors, burglar alarms, smart-windows, and garage doors). As shown in Fig. 7, we hand tap W-TENGs to wirelessly activate alarms/calling bells, lights, sensor displays, smart-windows, and photo frames (see 8 supplementary videos S2-S6). Lastly, W-TENGs can be used to activate security systems with either a single, or a specific user-defined passcode via mechanical pulses (e.g., Fibonacci sequence). Given that the most abundant energy associated with humans is mechanical energy resulting from body motion, W-TENGs can be used to harvest this otherwise wasted mechanical energy (e.g., walking) to wirelessly charge energy storage devices (e.g. capacitors). As a proof-of-concept, a 1 µF capacitor was wirelessly charged to 5.0 V within a minute (corresponding to a power of ~0.2 µW) using a W-TENG that was triggered by hand tapping (Fig. 8). Though the harvested power may seem low, this charging is 100% wireless and requires no batteries. Thus, one could envision a large arrays of W-TENGs integrated into walkways, roads and other public spaces to wirelessly charge energy storage devices that can harvest this wasted mechanical energy. Given that mechanically robust W-TENGs can be scalably 3D printed and virtually last forever, such large installations are physically feasible and economically viable. We note that the already high output of a W-TENG can be further enhanced to 3 kV via Ar plasma treatment of the top Teflon electrode [40], or by patterning or texturing the bottom gPLA electrodes via 3D printing (Fig. S9 and S10). This enhanced friction will convert mechanical energy into electricity, and wirelessly transmit energy into storage devices (e.g., capacitor). 4. Conclusion Fused deposition modelling was used for the additively manufacturing or 3D printing of PLA- based TENGs on a polyimide film. The addition of graphene filler to PLA improved the electrical conductivity of the printed gPLA electrode, which improved the W-TENG performance with output voltages > 2 kV and output powers of ~70 mW. The high electrical output of W-TENGs readily powered ~300 commercial green LEDs and also rapidly charged 9 a 10 µF capacitor to ~30 V within 2 minutes. The high voltage output of W-TENGs generated strong electric fields enabling wireless transmission without any external signal transmitters. In this regard, W-TENGs represent ideal self-powered transmitters for securely actuating smart-home applications (e.g. lights, temperature sensors, burglar alarms, smart- windows, and garage doors) upon receiving a specific sequence of mechanical pulses (i.e., a secure passcode). W-TENGs also permit the unprecedented wireless harvesting of mechanical energy, viz., a 1 µF capacitor wirelessly charged to 5.0 V within a minute using a W-TENG triggered by hand tapping. Acknowledgements R.P. and A.M.R are thankful to Watt Family Innovation Center (2301812) for the financial support. R. P. also thanks Clemson University for the start-up funds. Appendix A. Supplementary information References [1] F.R. 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1912.10351	1	1912	2019-12-21T22:36:57	Plug&play fibre-coupled 73 kHz single-photon source operating in the telecom O-band	[ "physics.app-ph", "cond-mat.mes-hall" ]	A user-friendly fibre-coupled single-photon source operating at telecom wavelengths is a key component of photonic quantum networks providing long-haul ultra-secure data exchange. To take full advantage of quantum-mechanical data protection and to maximize the transmission rate and distance, a true quantum source providing single-photons on demand is highly desirable. We tackle this great challenge by developing a ready to use semiconductor quantum dot (QD)-based device that launches single photons at a wavelength of 1.3 um directly into a single-mode optical fibre. In our approach the QD is deterministically integrated into a nanophotonic structure to ensure efficient on-chip coupling into a fibre. The whole arrangement is integrated into a 19" compatible housing to enable stand-alone operation by cooling via a compact Stirling cryocooler. The realized source delivers single photons with multiphoton events probability as low as 0.15 and single-photon emission rate up to 73 kHz into a standard telecom single-mode fibre.	physics.app-ph	physics	Plug&play fibre-coupled 73 kHz single-photon source operating in the telecom O-band Anna Musiał1,, Kinga Żołnacz2, Nicole Srocka3, Oleh Kravets1, Jan Groe3, Jacek Olszewski2, Krzysztof Poturaj4, Grzegorz Wójcik4, Paweł Mergo4, Kamil Dybka5, Mariusz Dyrkacz5, Michał Dłubek5, Kristian Lauritsen6, Andreas Bülter6, Philipp-Immanuel Schneider7, Lin Zschiedrich7, Sven Burger7,8, Sven Rodt3, Wacław Urbańczyk2, Grzegorz Sęk1, and Stephan Reitzenstein3, 1Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland 2Department of Optics and Photonics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroclaw, Poland 3Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany 4Laboratory of Optical Fibers Technology, Institute of Chemical Sciences, Faculty of Chemistry, Maria Curie Sklodowska University, Maria Curie Sklodowska Sq 3, 20-031 Lublin, Poland 5Fibrain Sp. z o.o., Zaczernie 190F 36-062 Zaczernie, Poland 6PicoQuant GmbH, Rudower Chaussee 29, 12489 Berlin, Germany 7JCMwave GmbH, Bolivarallee 22, 14050 Berlin, Germany 8Zuse-Institute Berlin, Takustrasse 7, 14195 Berlin, Germany * Corresponding authors: [email protected]; [email protected] ABSTRACT A user-friendly fibre-coupled single-photon source operating at telecom wavelengths is a key component of photonic quantum networks providing long-haul ultra-secure data exchange. To take full advantage of quantum- mechanical data protection and to maximize the transmission rate and distance, a true quantum source providing single-photons on demand is highly desirable. We tackle this great challenge by developing a ready to use semiconductor quantum dot (QD)-based device that launches single photons at a wavelength of 1.3 µm directly into a single-mode optical fibre. In our approach the QD is deterministically integrated into a nanophotonic structure to ensure efficient on-chip coupling into a fibre. The whole arrangement is integrated into a 19" 1 compatible housing to enable stand-alone operation by cooling via a compact Stirling cryocooler. The realized source delivers single photons with multiphoton events probability as low as 0.15 and single-photon emission rate up to 73 kHz into a standard telecom single-mode fibre. INTRODUCTION Sources of single photons (SPSs) are fundamental building blocks for photonic quantum technology, e.g., secure quantum communication1,2, quantum internet3, and linear quantum computation4,5. Recent world-wide activities on the implementation of quantum networks6 -- 11, including a satellite node12, reflect the importance of the field. Among different SPS concepts, to date the purest single-photon emission is provided by semiconductor quantum dots (QDs) featuring probabilities of multiphoton events as low as 10-5 for emission wavelengths below 1 μm13 (excluding their use for long-haul transmission14 -- 16), and 10-4 at telecom wavelengths under non-resonant excitation17. Thus QDs constitute superb quantum emitters in terms of scalability, integration and compatibility with advanced semiconductor technology18 -- 25. A general drawback hindering real-world applications of In(Ga)As QDs is the cryogenic operation temperature. In fact, this is the main reason why commercially available QKD systems and experimental quantum networks are almost exclusively based on sources utilizing spontaneous parametric down conversion or attenuated lasers7 -- 12,26 -- 28. This is despite the drawbacks that the former is probabilistic with low efficiency, whereas the latter does not inherently provide single photons making transmission susceptible to the photon number splitting attack29. In this work, we focus on developing a user-friendly SPS for quantum communication in the telecom O- band. This spectral window features a local minimum of loss in silica fibres, zero dispersion and is suitable for multiplexing with C-band classical signals, without the need for expensive dark fibres for the quantum channel, due to good spectral isolation reducing Raman scattering. Interestingly, fibre-based quantum links have already been implemented using QDs at the telecom O-band by KTH Stockholm and by Toshiba-Cambridge30. However, in all these reports the source was operated in complex and bulky experimental setups with QD emission coupled externally to a fibre. In order to take the application of QDs in quantum technologies to the next level we developed a user-friendly "plug&play" QD SPS which is fibre-coupled, compact and portable, includes a cooling system and provides a stable train of spectrally filtered single photons in the O-band via a standard telecommunication single- mode fibre. Importantly, this source is very convenient for the end user as it does not require any adjustment and is fully operational after a 15-minute cooldown cycle. In contrast, commercially available QD-based sources31 utilize a standard bulky and expensive experimental cryostat and proof-of-principle realizations of compact 2 designs32 are multimode fibre-coupled. Moreover, both approaches operate at shorter wavelengths below 1 µm and require external spectral filtering of the single quantum transition. A previous work reporting on a plug&play- like SPS operating in the telecom O-band14 is based on the random positioning of a single-mode fibre bundle with respect to the regular non-deterministic micropillar array featuring 30% multiphoton events. Whereas in our case, the QD-mesa fabrication technology and the positioning of the fibre with respect to the mesa are fully deterministic, which allows for the utilization of a single-mode fibre and the integration with a spectral filtering system. Overall, this is far beyond what has been reported so far in the field. RESULTS Approach and design Our concept for realization of a compact fibre-coupled single-photon source is presented in Fig. 1a). The overall scheme aims at providing the end user with a stable source of internally or externally triggered 1.3 µm single photons directly in a standard single-mode fibre. The source is easy to handle and operates at stable photon flux Fig. 1. a) Scheme of the fully fibre-coupled single-photon source - the frame marks the device with a standard telecom single-mode FC/PC fibre connector as output. b) Image of the actual device with Stirling cryocooler on the left, pulsed excitation laser on the bottom-right and the fibre components secured on the back wall. The ventilation openings in the housing and extra fans provide air flow for cooling of the Stirling cryocooler, which is operated in vertical position and mounted to the metal frame. c) Active region and sample patterning: spatial low-temperature (15 K) cathodoluminescence map in the spectral range corresponding to the target wavelength (1293-1295) nm with the emission intensity color-coded and the target QD marked by a black circle. Inset: scanning electron microscopy image of the patterned sample with mesa etched at the position of the target QD marked by a black circle. 3 without the need of any alignment or additional spectral filtering, and can be further used, e.g., for implementing quantum communication or computation schemes. The frame in the scheme marks elements which are placed in a 19" compatible housing shown in the image in Fig. 1b). The desired functionality is realized in the following way: Emission of the pulsed (80 MHz, pulse length <50 ps) non-resonant (805 nm) fibre-coupled electrically-triggered semiconductor diode laser is first spectrally filtered to transmit only the laser line itself into the fibre arrangement. The laser filter avoids unwanted broadband emission background, e.g., spontaneous emission from the laser cavity at the fibre output of our quantum device. In fact, while broad background emission (typically in the range of 600 -- 1600 nm) from the laser is too low to efficiently excite QDs, it is comparable to the single QD signal. Therefore, it is crucial to filter this background out directly after the excitation laser. Once background emission passes the pumping filter in the all fibre-configuration it would not be filtered out by any other component and it would be spectrally integrated by the single-photon detectors into the photon flux. In that case, even the low spectrally-broad laser background could result in a total number of photons exceeding the number of photons from a single optical QD transition and therefore would make the whole system completely unusable. The spectrally filtered single-mode laser signal is delivered to the sample via a reflection channel (see Fig. 1a)) of a specially designed three-port filter for pumping. The aforementioned fibre components are based on standard telecom fibres and they are spliced to a high numerical aperture fibre (NA = 0.42), which is precisely positioned with respect to the single-photon emitter via a recently developed interferometric method33 with an alignment accuracy of 50 nm and fixed to the sample surface by low temperature compatible epoxy glue (see Methods for details). It is important for a potential commercialisation of our concept to perform not only the fibre alignment in a deterministic way, but also the device fabrication itself. For that we apply in-situ electron beam lithography to pre-select suitable QDs via cathodoluminescence mapping before integrating them into microstructures with a process yield >90% and a positioning accuracy of about 40 nm34. This way, cylindrical mesas were deterministically fabricated around pre-selected QDs in approx. 20 µm x 20 µm writing fields (see inset to Fig. 1c)). In addition, the writing fields act as apertures and facilitate the orientation on the sample surface by mapping of its topography via a fibre in the alignment step. An exemplary CL map is shown in Fig. 1c) with the CL emission intensity color-coded for a narrow spectral range corresponding to the target wavelength of 1293-1295 nm at 40 K34. The position of the selected QD for device processing is marked by a black circle in Fig. 1c). It is characterized by emission in the spectral range of interest, high intensity and good spatial separation, which indicates that it originates from a single QD. This pre-selected QD is deterministically integrated into a cylindrical mesa with a diameter of (1090 ± 50) nm. Emission from this QD-micromesa is 4 collected via the high-NA fibre and enters a transmission channel of the pumping filter which at the same time filters out the excitation signal. Finally, the target excitonic line of the QD is spectrally selected from emission of other QD transitions such as the biexciton via a narrow (0.6 nm) fibre-integrated bandpass filter. The exit port of this filter is connected to the FC/PC fibre connector at the optical output of our stand-alone single photon source. The sample design, the microstructure and fibre geometry, as well as the placement of the fibre follow the results of numerical optimization of the design parameters. To this end, the propagation of the light emitted by the QD was simulated using a finite-element method35. The system parameters with optimal fibre-coupling efficiency were determined using Bayesian optimization as global optimization method36. One of many technological challenges in implementing our device concept is the filtering of all spurious spectral contributions besides the single photons originating from the target QD transition from the all-fibre coupled system. This is realized by customized fibre components described in detail below. These optical elements have to provide high spectral isolation of the target QD transition with minimum insertion loss. Fig. 2. Spectral characteristics of the fibre components measured with the supercontinuum and optical spectrum analyser (OSA): a) Broadband bandpass filter for the excitation laser. b) Single-mode (SM) pumping filter -- reflection channel through which the optical excitation is delivered to the sample after cleaning up its spectrum with the filter presented in a). c) SM pumping filter -- transmission channel through which the QD signal is delivered to the detection system. The laser radiation is blocked by -40 dB; d) SM narrow bandpass flat-top filter (0.6 nm full width at half maximum) with a central wavelength of 1294.65 nm; inset: set of fiber- based narrow bandpass differing in the adjustable central wavelength covering 2 nm spectral range of 1293 to 1295 nm. The orange curves show the transmission of the investigated component with respect to the reference signal level and the blue one depicts the OSA noise level. 5 Specialty fibre components Customized fibre components were designed and fabricated to fulfil the requirements of the stand-alone SPS device concept. Their optical characteristics (see Fig. 2) were evaluated using a supercontinuum light source and an optical spectrum analyser (OSA). The laser filter responsible for cleaning preliminarily the laser spectrum (see Fig. 2a) has high transmission at the laser line wavelength (805 nm) of -2.5 dB and high attenuation in the spectral range of the QD emission (-62 dB). For the flexibility of the optical excitation, this filter is a broad bandpass to allow for application of different laser wavelengths in the range of (700 -- 1000) nm. Laser light in this range is spectrally removed in the transmission channel (Fig. 2c) of the fibre pumping filter with an optical isolation better than -35 dB in the broad range and better than -40 dB at the actual laser line position. In the final device, the laser attenuation was increased to >80 dB by combining two filters of this type. The results of the measurements are shown for a single filter due to limited dynamic range of the OSA. This channel exhibits high transmission for the optical signal from the QD with -0.7 dB loss above 1150 nm up to at least 1700 nm (OSA detection limit) covering both the telecom O-band and C-band. In the reflection channel, the transmission is high in the range above 750 nm (loss lower than -4.2 dB) so that the optical excitation can be delivered efficiently to the sample. The relatively high loss at the wavelength of the laser line is not an issue in the case of single QDs as for the investigated structures the emission is typically saturated at average excitation powers in the single W range (cf. Fig. 3b). The next step is to isolate a single optical transition from the other emission signals related to the wetting layer, strain reducing layer, possible defects or other excitonic complexes confined in the same QD. This functionality is realized by an ultra-narrow top-flat fibre-integrated bandpass filter (0.6 nm) (see Fig. 2d)). To provide some spectral, a set of 7 exchangeable filters covering a wavelength of 1293 to1295 nm in the O-band with isolation better than -45 dB was fabricated. Device performance The optical properties of the stand-alone telecom single-photon source are evaluated using a fibre based Hanbury Brown and Twiss configuration equipped with superconducting nanowire single-photon counting modules (SNSPDs). Figure 3a) depicts the corresponding coincidences' histogram (black curve) obtained under pulsed excitation at 80 MHz with an average excitation power of 0.75 W recorded at the input of the customized fibre arrangement (T = 40 K), which corresponds to 0.65 W incident on the sample. The measured histogram was fitted by the sum of double-sided exponential decays for each maximum17 including the background level in between the emission pulses. The peak height for the non-zero delay peaks determined from the fitting procedure 6 was further used to normalize the coincidence events histogram to obtain the time delay-dependent second order correlation function g(2)(). The probability of multiphoton emission events g(2)(0) was determined from the fitting procedure as the ratio of the height of the central (zero delay) peak and the peaks at the long time delays and yields background-corrected g(2)(0) = 0.15±0.05 proving single-photon emission from the target optical transition. Here, the level of uncorrelated background determined in between the emission pulses is subtracted from the as measured g(2)(0) (see Methods for details). Here, the uncorrelated background signal is mainly attributed to non-ideal laser suppression in the full-fiber configuration. This issue can most probably be resolved by further increasing the attenuation of the laser blocking filter in the future. The associated PL spectrum of the QD at the output of the SPS is shown in the inset of Fig. 3a). The emission is centred at 1294.7 nm, and the linewidth equals 0.43 nm which is a typical value for 1.3 µm QDs18,37, where the quite significant inhomogeneous broadening is related mainly to spectral diffusion effects in the case of non-resonant excitation. At this excitation strength, the total photon flux yields 31 kHz at the device output which, taking into account the 15% probability of multiphoton events, corresponds to true single photon rate of 27 kHz -- Fig. 3b), where the latter rate considers the number of multiphoton events according to Ref.38. These emission rates are calculated at the output of the demonstrator (after the narrow bandpass filter), so the actual count rates on the SNSPDs are divided by the measured setup efficiency. Therefore, this is the actual single-photon rate that the end user will be provided with. Fig 3. Optical properties of the stand-alone SPS: a) Normalized coincidences histogram measured under pulsed non-resonant excitation (0.75 µW average power at 80 MHz) in all-fibre configuration at T = 40 K (black curve) together with a fitting curve (red); inset: corresponding spectrum measured in all-fibre configuration including the fibre-based narrow bandpass filter (its bandwidth is marked with the dashed vertical lines); b) g(2)(0) (left scale, blue symbols) and single photon flux rate at the output of the demonstrator (right scale, red symbols), measured under pulsed non-resonant excitation at T = 40 K as a function of average excitation power; the red dashed line marks the g(2)(0) = 0.5 defining the limiting value for single-photon operation; the error bars were obtained as the sum of the errors of fitting parameters; c) Stability test of the SPS: histogram of the count rates (averaged over 10 min) on one of the SNSPDs measured for 18 hours. A statistical analysis yields a mean value of 1151 counts per second (cps) and a standard deviation of 16 cps which corresponds to a 0.014 relative standard deviation. 7 To investigate the upper limit of the achievable single photon flux in the present device, coincidences histograms were measured as a function of the average excitation power in the range of 0.75 W up to 10 W. The corresponding power dependences of g(2)(0) -- blue symbols and single-photon flux -- red symbols, are presented in Fig. 3b). The limit of single-photon emission (g(2)(0) = 0.5) is observed at 10 W excitation power suggesting that at this excitation strength emission from the QD is already saturated, and that a further increase of the excitation power results in increased uncorrelated emission background overlapping spectrally with the QD line. The associated maximal true single photon flux corresponding to the saturation of QD emission equals 73 kHz. Its excitation power-dependence follows the emission intensity dependence of the single QD transition. During collection of the histogram at a given excitation power the photon count rate at the SNSPDs was monitored over 18 h to get an insight into the long-term stability of the output of the source. The SNSPD detector count rates were averaged over 10 min and combined to generate the histogram presented in Fig. 3c). In comparison to emission rates in Fig. 3b this rate is decreased by the transmission of the experimental setup, including fibre beam splitter, fibre connectors and quantum efficiency of the detectors themselves. The statistical evaluation of these data yields a mean value of 1151 cps with a standard deviation of 16 cps, which corresponds to the relative standard deviation of 0.014. This shows that the long-term stability of the demonstrator output is better than 1.5%. DISCUSSION The realized plug&play SPS operates in the telecom O-band at a temperature of 40 K and provides a train of triggered single photons at a rate as high as 73 kHz into a single-mode fibre. Noteworthy, the rate of generation of single photons is by two orders of magnitude larger than the ~ 0.7 kHz reported in Ref.32 for a multi-mode fibre- coupled stand-alone SPS based on a standard InGaAs QD emitting in 900-950 nm wavelength range. The lowest achieved probability of multiphoton events yields 15%. This highlights the significant advances achieved in the present work, which not only provides a fully fibre-based solution, but also demonstrates single-mode operation in the O-band -- all of which are crucial prerequisites for real-world device applications, e.g., in the field of quantum communication. For optimized performance InGaAs QDs need to be cooled down. To take advantage of the compact and cheap cooling method provided by Stirling cryocoolers a direct, rigid and thermally as well as mechanically stable fibre coupling of the QD emission to a single-mode fibre was developed33. This overcomes the drawback of low frequency vibrations with the amplitude in the range of m exceeding the size of the quantum emitter (at most tens of nanometers) inherent to the operation of the Stirling cryocooler. The proposed solution with superior performance is obtained by the interplay of various developed components, pump laser, growth of 8 high-quality self-assembled QDs and design of mesa-DBR-fibre-setup based on numerical modelling, deterministic fabrication of QD-mesas, cooling method, specialty high-NA fibre, high-precision fibre positioning and customized fibre components for spectral filtering. An important challenge of our device concept is to deliver the excitation efficiently and filter out the unwanted photons both from the pump laser and emitted from other parts of the structure. High isolation of the single transition is needed both in broad range as well as in a narrow range. Due to relatively small binding energies (in the range of 1 meV) of various excitonic complexes confined in the same QD37, a very sharp edge bandpass filter is required. Even more important is the loss for the actual single-photon signal. Commercially available elements can offer arbitrary good isolation, but the insertion loss, especially if one has to stack several of such elements with different functionalities, is typically unacceptable with values in the range of 1.5 dB per element for a signal from a single QD. Therefore, minimizing the insertion loss of the fibre components was crucial for the realization of the reported source. This can be further optimized by using low loss splices instead of standard mating sleeves. Besides that, the single-photon flux can be increased by using more efficient approaches for extraction efficiency enhancement39. Applying a tuneable narrow bandpass filter might further increase the flexibility of the device concept in the future. Noteworthy, our approach is independent of the material used and can be adopted to different spectral ranges. The limiting factors are the structural quality of the QD material and the spatial QD density. Also, in view of the fibre components, the excitation wavelength has to be significantly different (by at least 100 nm for the current fibre components) for a good isolation of the single-photon transition from the scattered laser light. Therefore, the strictly resonant or even quasi-resonant excitation is at this stage not possible. It would also be less practical as a very specific different wavelength of the pump would be required for each QD and only one laser source could be used for each device, which would decrease the universal character of this design, and would also increase substantially the cost of the whole system, which is now mostly dictated by the Stirling cryocooler and the excitation source. One has to keep in mind that the coherence properties in the case of the investigated structures will be in any case limited by the operation temperature (40 K) and not by the non-resonant excitation scheme. On the other hand, it is straightforward to use our concept, which can easily be transferred to other wavelengths such as the telecom C- band at 1.55 µm, with optical above-bandgap and wetting-layer excitation as well as electrically triggered structures where the pump rejection is not required at all, so it depends only on the availability of suitable QD emitters. The purity of the single photons is determined by the QD material itself. Thus, it is a matter of choosing a properly isolated transition with low emission background, which is not a limitation of the implemented concept itself, but relies more on the development of high-quality QD material at telecom wavelengths25. 9 CONCLUSIONS We demonstrated a user-friendly fully fibre-coupled triggered source of single-photons in the telecom O-band suitable for applications in long-range quantum communication schemes. The single photons are emitted by a semiconductor QD, deterministically integrated into a micromesa and on-chip coupled to a high NA customized single-mode fibre. The QD sample is cooled by a compact Stirling cryocooler at 40 K. The main ingredient of the proposed solution are: specially designed fibre components, the deterministic in-situ fabrication of mesa structures following the numerically obtained structure design (100% yield and spatial accuracy better than 40 nm) around the target QD and ultra-precise interferometric method for fibre alignment (accuracy below 50 nm) with respect to the mesa centre. Combining these developments resulted in a device performance with a probability of multiphoton events as low as 15% and the maximal single-photon generation rate at the single-mode fibre output of 73 kHz. The long-term stability of the optical output of the stand-alone SPS is better than 1.5% (standard deviation). Our user-friendly device concept does not require a supply of cryogenic liquids, is robust and provides a hardware solution being compact, mechanically stable and portable. It does not require any additional adjustments or post selection of the single photons by the user as the filtering fibre systems are already integrated. Therefore, the end user can operate the source in a plug&play fashion, as at the output it has a standard telecommunication single mode fibre which delivers the train of triggered single photons at 1294.7 nm for the used QD. It is worth mentioning in the context of the obtained results that similar probability of multiphoton events has been proven to be sufficient for the realization of QKD over 35 km and it outperforms the laser-based approach40. Additionally, the possibility of tuning the QD-based SPSs with external strain and static electric field41,42 as well as electrical excitation43 could be easily integrated in our source, rendering its application potential even larger. Therefore, these results pave the way to real-word application of QD-based fibre quantum networks. METHODS Sample growth The QDs were formed by self-organization during metalorganic chemical vapour deposition (MOCVD) in the Stranski-Krastanow growth mode. Starting with a GaAs wafer, first the bottom DBR with 15 pairs of GaAs/Al0.9Ga0.1As layers with 98.3/113.8 nm thickness on a 300 nm GaAs buffer was grown at 700 °C followed by a 505.4 nm thick additional GaAs layer. For the growth of the QD layer the temperature was decreased down 10 to 500 °C. The active region is constituted of InGaAs QDs (formed from 2.5 monolayers (ML) of InGaAs with 66% In content and flushed with 1 ML of GaAs) and is followed by a 5.5 nm thick InGaAs strain reducing layer (SRL) with an In gradient from 30% at the bottom down to 10% at the top. After initial capping with 2 nm of GaAs the capping layer consists of 612.7 nm of GaAs grown at 615 °C. In-situ electron-beam lithography The applied fibre positioning method33,44 requires that a single QD is located with high accuracy in the centre of a micrometer-sized nanophotonic structure. For that purpose, in-situ electron-beam lithography45 optimized for 1.3 μm emission wavelength and with an overall positioning accuracy below 50 nm34 was utilized. In this procedure (310 ± 2) nm of CSAR e-beam resist (measured by ellipsometry) diluted to a solid content of 6.5% was spin coated on the sample surface. Next, the sample is mounted in the in-situ EBL system and cooled down to cryogenic temperatures (15 K). At first the cathodoluminescence mapping was performed with 40 ms integration time for each pixel to identify the most suitable QDs for further processing. The criteria at this step are the spatial isolation of the QD, the emission intensity and the spectral range of emission. In this context it is important to note that QD emission needs to fit within the bandwidth of the fibre bandpass filters which span the range of 1293 - 1295 nm. The mapping dose must be below the onset dose for inverting the resist and in this particular processing 8 mC/cm2 was used. After identifying a suitable QD the lithography step is performed still at cryogenic temperatures within the same in-situ EBL system. The resist is exposed using 25 mC/cm2 electron dose and single cylindrical mesa structures are patterned in each writing field. The nominal diameters of the mesas on this sample are: 1050, 1075 and 1090 nm, and a mesa height (corresponding to etching depth) equals to (620 ± 5) nm. Further processing was performed at room temperature in the cleanroom. It includes resist development and dry etching (reactive ion etching) of the patterned structures. Afterwards, scanning electron microscopy (SEM) in top view configuration (no tilt angle) was performed to determine the actual mesa diameters and the etching depth was verified via profilometer measurements. Positioning of the fibre with respect to the mesa For positioning of the optimized high-NA single mode fibre with respect to the mesa centre prior to gluing a zirconia ferrule with the fibre to the sample surface, an interferometric method detailed in33,44 was used. The alignment procedure is performed at room temperature which, importantly, does not rely on the actual QD signal (which is not detectable at room temperature), but takes advantage of the deterministic character of the mesa structure fabrication with a single QD in the centre. The position of the fibre is adjusted for the centre of the mesa 11 based on measurements of the topography of the sample utilizing the interference between the spectrally broad signal form the supercontinuum reflected from the fibre facet and the surface of the sample dependent on the distance between the fibre and the sample surface. Both the fibre and the sample surface are first positioned horizontally using piezo actuators and the fibre is further moved across the sample surface at constant distance. The analysis of the spectral interference fringes allows us to position the fibre with respect to the mesa centre with 50 nm accuracy (for microlenses with diameter smaller than 2 μm), i.e., with a deviation much smaller than the diameter (2.5 µm) of the single mode fibre core. After having aligned the fibre with respect to the mesa centre leaving an air gap between mesa and fibre end facet of about 0.5 μm, the fibre is set in physical contact with the sample surface which is crucial for long-term mechanical and thermal stability. Then the fibre ferrule is glued to the sample surface with ceramic UV-cured glue exhibiting a low thermal expansion coefficient of only 14 ppm/°C (compare to the GaAs coefficient of 5.73·ppm/°C). It is important to note that this glue is not transparent in the spectral range of interest, so it is only applied outside the ferrule leaving the fibre end facet and the mesa top surface free of any glue. Fibre-components The fibre components specially designed for the presented single-photon source include: a single-mode fibre with high (0.42) numerical aperture, broad bandpass filter to remove/suppress unwanted spontaneous emission background of the pulsed laser source, a fibre filter responsible for delivering the optical excitation to the sample (reflection channel) as well as spectrally suppressing it out from the detection path to provide high transmission for the actual QD signal (transmission channel), and finally a narrow bandpass filter (0.6 nm) for selecting the target emission line of the fibre-coupled QD. Additionally, the customized fibre coupled to the QD has to be spliced with a standard telecom fibre to provide an easy to integrate output of the device. The transmission of each component was evaluated with respect to the reference measurement in which a tested component was exchanged with a simple patch cord to account for spectral characteristics of the source and the detection system. Additionally, the noise level of the OSA itself was measured each time for illustrating the dynamic range of the detector to verify whether it is large enough or the result of the measurements constitute only a lower limit of the isolation provided by the respective fibre element. The customized fibre was optimized in terms of numerical aperture and residual thermal stress for safe operation at cryogenic temperatures. The high numerical aperture (NA = 0.42) is achieved by using highly Ge doped core with 40% mol of GeO2. Such a high level of doping results in a huge difference of thermal expansion coefficients between the core and the cladding of the fibre which might lead to fibre breaking either during fabrication of the 12 fibre or cooling it down for low-temperature measurements of the QD signal. To reduce the stress level, a fibre with a three-step doping profile (40, 13 and 5% mol), resulting in the similar refractive index profile (1:2:3 diameter ratios), was fabricated following the design obtained via the finite-element method simulations. This approach resulted in a numerical aperture of 0.42 with a cut-off wavelength of 1050 nm for a fibre with 2.5 μm core diameter. The customized fibre is terminated with a zirconia ferrule polished into the spherical end-face. It is glued directly to the QD-micromesa and further sealed by an epoxy glue in a specially designed vacuum feedthrough to a portable Stirling cryocooler. The customized fibre has to be further spliced to a standard telecom single mode fibre (core diameter of 9 μm) and the main challenge here is to overcome the 3.6 factor between the fibre core diameters. A low-loss splice (0.2 dB in both directions) has been achieved using glass processing station with CO2 laser splicer via the thermal core expansion technique which relies on equalizing the fibre core diameters by controlled heating of the splice area causing the GeO2 dopant from the core to diffuse to the cladding, eventually creating a gradual low loss splice. All filters were fabricated in the thin film filter (TFF) technology. The bandpass filters have a bandwidth of 0.6 nm with a flat-top characteristic which is important to maximize the emission line transmission through the filter. It is also possible to fabricate filters with a different bandwidth down to 0.3 nm (at the expense of higher loss of 1.2 dB). For their fabrication, a commercially available TFF CHIP was used and the central wavelength of the actual filter can be tuned by 2 nm via the angle of incidence on the chip which can be tuned on the fabrication stage of the filter. The tuning range of the central wavelength is limited by the change in the shape of the bandwidth and polarization selectivity appearing for high angles of incidence to 2 nm at maximum and 1 nm in practice. The parameters of the fibre filters are summed up in Table 1. Table 1. Parameters of the specialty fibre filters. Parameter Narrow bandpass filter Transmission channel Reflection channel Pumping filter Maximal insertion loss [dB] 0.70 4.20 (SM) 1.80 (MM) 0.50 Bandwidth [nm] 1150 ÷ 1600 785 ÷ 1000 central wavelength +/- 0.3 Laser attenuation [dB] > 40 (per chip) > 2.50 13 The characteristics of the fibre filters (see Fig. 2) were measured using fibre-coupled supercontinuum light source (NKT Photonics SuperK Versa) and an optical spectrum analyser OSA (Yokogawa AQ6370B) covering the spectral range of 600 nm to 1700 nm. The transmission of the filters was determined as a difference between the transmission of setup with the filter and a reference measurement in which the filter was replaced by a fibre patch cord. Additionally, the noise level of the OSA was measured showing in which cases the measurement results (in particular signal attenuation by the filter) are limited by the sensitivity of the detection system itself. In this case only the lower limit for the attenuation can be determined due to limited dynamic range of the detector. Experimental setup -- spectroscopy measurements In general, two experimental configurations were used for the spectroscopy study of the SPS. The common part of the two configurations was the fibre-glued sample mounted in the Stirling cryocooler (base temperature 38 K) with optical excitation (laser output filtered with the broad bandpass filter) delivered via the customized fibre pumping filter. The non-resonant excitation of the investigated QD structures was realized using an electrically- triggered fibre-coupled semiconductor diode laser custom-designed by PicoQuant. The laser is built around a pre- selected laser diode emitting at 805 nm. Special driving electronics permit freely selectable repetition rates up to 100 MHz using internal or even external triggering. The laser emits pulses with a pulse width <50 ps (FWHM) with average power of a few milliwatt, which can be further reduced by a built-in computer-controlled attenuator allowing to adjust the excitation power to the requirements of the QD structures. The difference in the two experimental configurations appears in the way the signal from the sample was filtered spectrally. For the pre- characterisation of emission from the sample, the optical signal was out-coupled from the output port of the fibre filter for pumping to free-space and filtered spectrally via a 0.32 m focal length spectrometer with 600 groves/mm grating blazed at 1000 nm providing 0.4 nm bandwidth at its output. The PL signal was further coupled to the single-mode fibre connected to a single-photon counting module (superconducting NbN nanowire detector with 20% quantum efficiency - SNSPD). This configuration was used to measure photoluminescence (PL) spectra of the QD in a broad spectral range to identify proper excitation conditions for autocorrelation measurements and in particular to select a proper bandpass filter for the second, all-fibre configuration. For the measurements on the actual fully fibre-coupled device, the output of the pumping filter was connected to the narrow bandpass filter and further via the output connector of our stand-alone SPS to a 50:50 beam splitter based on SM fibres. Each output of the beam splitter was then connected to a SNSPD for autocorrelation measurements which were carried out using a multichannel picosecond event timer (PicoHarp300) with 256 ps time-bin width. The measured histograms were fitted with the following function17: 14 (2)(𝜏) = 𝑔𝑏𝑔 + 𝑔𝑎𝑢𝑡𝑜𝑓(𝜏) + ∑ 𝑔𝑓𝑖𝑡 𝑛≠0 𝑓(𝜏 − 𝑛𝑇0) , where 𝑔𝑏𝑔 corresponds to the background counts, 𝑔𝑎𝑢𝑡𝑜 indicates our figure of merit -- g(2)(0) and f() is the normalized bi-exponential function with T0 is the distance between the consecutive pulses (corresponding to the repetition rate of the excitation laser) which describe the auto-correlation between the photons emitted within different pulses. The peak height for the non-zero delay peaks determined from the fitting procedure was further used to normalize the coincidence events histogram to obtain the time delay-dependent second order correlation function g(2)(). ACKNOWLEDGEMENTS This work was funded by the FI-SEQUR project jointly financed by the European Regional Development Fund (EFRE) of the European Union in the framework of the programme to promote research, innovation and technologies (Pro FIT) in Germany, and the National Centre for Research and Development in Poland within the 2nd Poland-Berlin Photonics Programme, grant No. 2/POLBER-2/2016 (project value 2 089 498 PLN). Support from the German Science Foundation via CRC 787 and the Polish National Agency for Academic Exchange is also acknowledged. AUTHOR CONTRIBUTIONS AM, GS and SR initiated the research. AM wrote the manuscript with input from all the co-authors and supervised the optical measurements of the device; KŻ performed the measurements of the characteristics of the fibre components as well as customized fibre positioning and gluing to the semiconductor structure under supervision of WU who designed the fibre feedthrough for the Stirling cryocooler and coordinated the work related with fibre transmission system for the device; NS performed the CL measurements, the patterning of the sample as well as its structural characterization under supervision of SRo; OK prepared the figures, performed the correlation measurements and the stability tests of the device; JG grew the QD sample under supervision of SR; JO performed the finite element method simulation for the customized fibre design; KP and GW fabricated the customized fibre under the supervision of PM; KD and MD fabricated and characterized the fibre components under supervision of MDł; SR and GS co-coordinated the entire project, and were directly responsible for coordinating of the work regarding the QD fabrication and spectroscopy, respectively, as well as interpretation of obtained results and proposing the idea and approach for realization of the device; KL and AB developed and optimized the laser source 15 for optical excitation of the single-photon source; P-IS, LZ and SB performed numerical modelling of the QD- mesa structure design. 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FIGURE LEGENDS Fig. 1. a) Scheme of the fully fibre-coupled single-photon source - the frame marks the device with a standard telecom single-mode FC/PC fibre connector as output. b) Image of the actual device with Stirling cryocooler on the left, pulsed excitation laser on the bottom-right and the fibre components secured on the back wall. The ventilation openings in the housing and extra fans provide air flow for cooling of the Stirling cryocooler, which is operated in vertical position and mounted to the metal frame. c) Active region and sample patterning: spatial low- temperature (15 K) cathodoluminescence map in the spectral range corresponding to the target wavelength (1293- 1295) nm with the emission intensity color-coded and the target QD marked by a black circle. Inset: scanning electron microscopy image of the patterned sample with mesa etched at the position of the target QD marked by a black circle. Fig. 2. Spectral characteristics of the fibre components measured with the supercontinuum and optical spectrum analyser (OSA): a) Broadband bandpass filter for the excitation laser. b) Single-mode (SM) pumping filter -- reflection channel through which the optical excitation is delivered to the sample after cleaning up its spectrum with the filter presented in a). c) SM pumping filter -- transmission channel through which the QD signal is delivered to the detection system. The laser radiation is blocked by -40 dB; d) SM narrow bandpass flat-top filter (0.6 nm full width at half maximum) with a central wavelength of 1294.65 nm; inset: set of fiber-based narrow bandpass differing in the adjustable central wavelength covering 2 nm spectral range of 1293 to 1295 nm. The orange curves show the transmission of the investigated component with respect to the reference signal level and the blue one depicts the OSA noise level. Fig 3. Optical properties of the stand-alone SPS: a) Normalized coincidences histogram measured under pulsed non-resonant excitation (0.75 µW average power at 80 MHz) in all-fibre configuration at T = 40 K (black curve) together with a fitting curve (red); inset: corresponding spectrum measured in all-fibre configuration including the fibre-based narrow bandpass filter (its bandwidth is marked with the dashed vertical lines); b) g(2)(0) (left scale, blue symbols) and single photon flux rate at the output of the demonstrator (right scale, red symbols), measured under pulsed non-resonant excitation at T = 40 K as a function of average excitation power; the red dashed line marks the g(2)(0) = 0.5 defining the limiting value for single-photon operation; the error bars were obtained as the 19 sum of the errors of fitting parameters; c) Stability test of the SPS: histogram of the count rates (averaged over 10 min) on one of the SNSPDs measured for 18 hours. A statistical analysis yields a mean value of 1151 counts per second (cps) and a standard deviation of 16 cps which corresponds to a 0.014 relative standard deviation. 20
1912.07149	1	1912	2019-12-16T01:13:57	Continuously Tunable Acoustic Metasurface with Rotatable Anisotropic Three-component Resonators	[ "physics.app-ph" ]	We propose a tunable acoustic metasurface consisting of identical units. And units are rotatable anisotropic three-component resonators, which can induce the non-degenerate dipolar resonance, causing an evident phase change in low frequencies. Compared with the monopole resonance widely used in Helmholtz resonators, the polarization direction of the dipole resonance is a new degree of freedom for phase manipulation. The proposed metasurface is constructed by identical units that made with real (not rigid) materials. And the phase profile can continuously change by rotating the anisotropic resonators. We present a wide-angle and broad-band acoustic focusing by the metasurface under a water background.	physics.app-ph	physics	Continuously Tunable Acoustic Metasurface with Rotatable Anisotropic Three-component Resonators Pan Li, Yunfan Chang, Qiujiao Du, Zhihong Xu, Meiyu Liu and Pai Peng School of Mathematics and Physics, China University of Geosciences, Wuhan 430074, China *Corresponding author. [email protected] Abstract We propose a tunable acoustic metasurface consisting of identical units. And units are rotatable anisotropic three-component resonators, which can induce the non-degenerate dipolar resonance, causing an evident phase change in low frequencies. Compared with the monopole resonance widely used in Helmholtz resonators, the polarization direction of the dipole resonance is a new degree of freedom for phase manipulation. The proposed metasurface is constructed by identical units that made with real (not rigid) materials. And the phase profile can continuously change by rotating the anisotropic resonators. We present a wide-angle and broad-band acoustic focusing by the metasurface under a water background. 1. Introduction Acoustic metasurfaces (AMs) can freely manipulate wavefront have received extensive attention in recent years1-4). Most of the classical acoustic metasurfaces (CAMs) have two ways to modulate the phase change inside the unit cells. One way is to change the effective spatial path of waves by the space-coiling structures2, 5, 6), and the other is to obtain phase delay from resonances7, 8). These CAMs have realized many interesting functions, including abnormal reflection5) or refraction9), acoustic focusing6), asymmetric transmission10, 11), acoustic accelerating beam8, 12), acoustic holography13), acoustic illusion14) and cloaking15). Although CAMs hold great potentials for wavefront manipulation, they are limited to meet the requirements of broadband and alterable functionalities due to fixed microstructures. To overcome this limitation, researchers propose the tunable acoustic metasurfaces (TAMs)16-27), whose acoustic response can be modulated by tunable units, like actively controlled transducer arrays, independently adjustable units or reconfigurable microstructures. Currently, there are two main types of TAMs: active and passive. And most of the TAMs still rely on actively controlled units, like transducer arrays16, 17) and active membrane metamaterials19, 20), which are complex and expensive. Recently, researchers have paid more attention to passive TAMs consisting of reconfigurable microstructures22-27). Based on the matched screw-and-nut physical mechanism, Zhao et al. designed a class of the tunable space-coiling metasurface with individual unit components of a helix screwed inside a plate for transmitted24) and reflected wavefront modulation25). With the nested Helmholtz resonant structure, Zhai et al. designed a TAM for filtering and imaging22). And Wang et al. proposed a TAM consisting of annular resonators to modulate the transmitted wavefront27). Besides, a TAM composed of tunable Helmholtz resonators has been reported by Tian et al.23). So far, the research works about TAM are still limited. In this paper, we design a tunable acoustic metasurface (TAM) based on identical anisotropic resonant units28-30), each of which is a modified three-component composite. The anisotropic resonant unit is proven to be a dipolar resonator with two non-degenerate eigenmodes, which could be controlled by the rotation angle of the elliptical rotor. And the reflected phase shift of the unit will have a span of just by changing its rotation angle. In a wide frequency range, this TAM can focus the reflected waves of different incident angles on a fixed focal length. With the same TAM, we also can control the position of the focus point arbitrarily. 2. Design of the Tunable Unit Cell We consider a tunable unit cell, which consists of a square epoxy frame with a circle cavity and an elliptical resonator in the center of the cavity, as shown in Fig. 1(a). The length of the frame and the radius of the cavity are and , respectively. The cavity is filled up with water, so the resonator is rotatable. The resonator is particular designed with three components31) to provide the dipolar resonance28). The resonator is composed of an elliptical epoxy shell (with semi-minor axis and semi-major axis ), an elliptical rubber layer (with semi-minor axis and semi-major axis ), and a circle steel core 2p30.4rp=10.3Rp=20.35Rp=10.25rp=20.3rp=(with radius ). The rotational angle of resonator is , which is the only variable parameter in our system and can continuously change from 0 to 90 degree. The used material parameters are: , , and for epoxy; and for water, , , , and for rubber; , and for steel. Here is the mass density, and are the Lamé constants, and is the speed of sound. An elastic metamaterial is constructed by the tunable unit cells (with ) periodically arranged in a square lattice. We calculate the band structure with the finite element method (using COMSOL Multiphysics software) and plot the lowest seven bands in Fig. 1(b). By carefully check the patterns of eigenstates, we find three flat bands induced by rotational resonances (denoted by blue hollow circles around , and ), and the other four bands (highlighted by red solid lines) are induced by a non-degenerate dipolar resonance28). The eigenstates of the eigenmodes A and B on the fifth and third bands (with normalized wavelengths and ) on the Brillouin zone boundary along the direction are plotted in Fig. 1(c) and (d), respectively. The movements of modes A and B are mainly along the semi-major and semi-minor axis of the ellipse, respectively. These two modes with movement perpendicular to each other are a pair eigenmodes of a non-degenerate dipolar resonance. The corresponding wavelengths of mode A and B are and , respectively. The modes A and B present the longitudinal and transversal modes of a dipolar resonance, 00.18rp=3e1180kg/m=92e4.410N/m=92e1.610N/m=3w1000kg/m=w1490 m/sc=3r980kg/m=92r1.9610N/m=52r5.510N/m=3s7900kg/m=112s110N/m=102s8.110N/m=c0=/0.026p=/0.047p=/0.059p=A/0.071p=B/0.052p=ΓYA14.1p=B19.2p=respectively, due to their wavelengths. FIG. 1 (a) The schematic diagram of the tunable unit cell. (b) The band structure of the elastic metamaterial, which is composed of the tunable unit cells (with ) periodically arranged in a square lattice. (c) and (d) respectively are the excited velocity fields of points A (with ) and B (with ) denoted in (b). 0=A/0.071p=B/0.052p= FIG. 2 (a) The calculation region of the TAM. Plane pressure waves are normally incident from water. (b) The reflected phase change of the tunable unit cell as a function of rotational angle and wavelength. (c) and (d) are the excited velocity fields of points C (with ) and D (with ) denoted in (b), respectively. We let one layer of the elastic metamaterial lied at the bottom of water and study the phase properties for reflected waves. The calculation region is shown in Fig. 2(a). In particular, to reduce the interaction between the neighboring units, two air voids (with length and the thickness ) are added on the left and right sides of the unit. The distance between the air void and the side boundary is . The used material parameters are and for air. We let plane pressure waves normally incident from water and calculate the A/0.071p=B/0.052p=0.02dp=0.96hp=0.01wp=3a1.29kg/m=a340m/sc=reflected phase. The results are plotted in Fig. 2(b), where the phase change is as a function of the rotational angle and incident wave length . In general, the phase change is trivially very small and insensitive to the rotated angle because of long wavelengths, which are more than 10 times the unit size. However, large phase changes are found in a range between and . We choose a point C, which has an incident wavelength of the same as that of mode A, and plot the excited velocity field in Fig. 2(c). The vibration is mainly along the semi-major axis, and the pattern of point C is almost the same as that of mode A. We can see that the longitudinal mode of the dipolar resonance is excited by the incident acoustic wave, and the large phase change around the point C is induced by the longitudinal mode. Here the elliptical resonator is vertically placed and the rotational angle is . If the elliptical resonator is horizontally placed (corresponding to ), the longitudinal mode cannot be excited due to symmetry, and thus the phase change will reduce to trivially small. As a result, the phase change is controlled by the rotational angle . When gradually increases from to , the phase change can roughly cover a range of . Base on this phase properties, we can design an AM consisting of identical until cells, and the rotational angle is a new degree of freedom to control the phase change. A continuously tunable rotational angle brings a flexible phase regulation, resulting in a continuously TAM. Similar phase properties can be found at the incident wavelength of . When the elliptical resonator is horizontally placed (with ), the transverse mode of /0.045p=/0.08p=A0=90=0=90=2B90=the dipolar resonant can be excited. The point D marked in Fig. 2(b) has an incident wavelength of the same as that of mode B. The excited velocity field of point D is plotted in Fig. 2(d). The vibrations are mainly along the semi-minor axis, where the pattern is the same as that of mode B. In contrast to the longitudinal mode, the transverse mode can induce large phase change at but trivially small phase change at . The two (longitudinal and transverse) resonant modes of a non-degenerate dipolar resonance have different resonant wavelengths, which make the dependent relationship between phase change and rotational angle exist at a broad wavelength range. In a range roughly between and , the phase changes are controlled by the rotational angle. Not all the wavelength, the phase change can cover a full span. The refined wavelengths are in a region between and (corresponding to wavelengths and ) as denoted in Fig. 2(b) by two white dashed lines. In this region, the phase change can cover a full span, and thus we can build a continuously broad-band TAM. 3. The Continuously Tunable Acoustic Metasurface As shown in Fig. 3(a), a TAM is composed of 120 identical tunable unit cells as studied in Fig. 2(a). We let pressure waves incline incident (with incident angle ) from the water and manipulate the reflected wavefront by using the TAM. In this work, we demonstrate that the TAM can focus (as an example) the reflected waves and manipulate the focus position by adjusting the rotational angle in every unit cell B90=0=/0.045p=/0.08p=21/0.049p=2/0.059p=120.4p=216.9p=2when the incident wave come from different directions and with different wavelengths. FIG. 3 The TAM with a fixed focal length of . (a) The schematic diagram of the TAM composed of 120 tunable unit cells. (b) The phase change is as a function of the rotational angles . (c) The required phase profile obtained from Eq. (1) (d-g) The reflected amplitude fields (up) and the rotational angles of the unit cells (down) for different incident angles and wavelengths. (h-k) The reflected amplitude fields obtained by a TAM with fix geometry. Base on the Generalized Snell's Law (GSL)32), the reflected pressure field is determined by the phase profile provided by the TAM. A focusing effect 30fp=()xrequires a hyperbolic function of . The expression is . (1) Here we fix the focal length of at , and the phase profile can be calculated with given parameters of incident angle and wavelength . Following the relationship between phase change and rotational angle , which has been calculated in Fig. 2(b), the rotational angle distributions of the unit cells can be achieved to satisfy the required phase profile . For example, in case of and , the functions of and can be obtained from Fig. 2(b) (the lower white dashed line) and Eq. (1), and the results are plotted in Fig. 3(b) and (c) by the red thick lines, respectively. Then the rotational angle distributions is obtained from and , and the result is plotted at the bottom of Fig. 3(d). The corresponding reflected pressure field is shown in Fig. 3(d). The pressure pattern exhibits a focal point at about , which agrees well with the prediction ( ). When the incident angle changes to , the acoustic focusing should fail, as shown in Fig. 3(f) as a reference, if the geometry of TAM is fixed as CAMs. Here we show that the TAM can adapt to the change of incident direction by adjusting the rotational angle distributions. In case of and , the functions of and are recalculated and plotted in Fig. 3(b) and (c) by the blue thin lines, respectively. Accordingly, the obtained as well as the pressure field are shown in Figs. 3(e). The focal point is kept at , which is slightly different to the designed position. Good focusing effects can be achieved by the TAM when the incident angle changes within a range . When the ()x2202()(()sin)xxxffx=−+−−30fp=00x=()x()()x()x0=1=()()x()x()()x30.6yp=30fp=60=60=1=()()x()x27.4yp=6060−incident wavelength changes to , the TAM can also keep the focus position within a range . Figures 3(f) and (g) show results corresponding to the cases of normal ( ) and incline ( ) incidences at the wavelength of , respectively. The rotational angle distribution is obtained in a similar way, and the pressure field also shows good focusing effects. Figures 3(j) and (k) are the results obtained from the AM with fixed geometry. FIG. 4 The TAM with an adjustable focus position. The reflected amplitude fields (up) and the rotational angles of the unit cells (down) at the wavelength of and the incident angle of . The black arrow denotes the phase shift. Next, we show the manipulation of focus position. Without loss of generality, we 2=6060−0=60=2=()x120.4p=060=set the incident angle and wavelength of as constants. The manipulation of vertical and horizontal position can be achieved by changed the focal length and shift the rotational angle distributions, respectively. Different focal length lead to different phase profile . The rotational angle distributions can be obtain form the studied in Fig. 3(b) and a new function of from Eq. (1). Figures 4(a), (b) and (c) show the pressure fields with focal points at , and , which are roughly agree with the designed focal lengths of , and , respectively. Figures 4(d)~(f) show that the focus position shift to the left side when we shift the rotational angle distribution. The focusing effect becomes weaker because of the edge effect. In principle, an infinite long TAM can smoothly move the whole pressure field along the horizontal direction. If we simultaneously change the focal length and shift the rotational angle distribution, we can manipulate the focus position in a wide range. 4. Conclusion In summary, we propose a TAM composed of identical anisotropic resonant units, which can induce the non-degenerate dipolar resonance, causing an evident phase change. With anisotropic resonant units, we can control phase changes with a new degree of freedom, the polarization of the dipole resonance. As results show, the TAM can focus acoustic waves at a fixed length when they incident from different directions with different wavelengths, and can manipulate the focus position. Besides, the TAM is made of actual materials and without any rigid material. Here, the 60=1=f()x()x()()x8.38yp=24.9yp=55.6yp=10fp=30fp=60fp=acoustic focusing effect is presented under a water background. The proposed wide-angle and broad-band TAM may have good potential in the application. Acknowledgement This work was supported by the National Natural Science Foundation of China (Grant No: 11604307). References 1) 2) J. J. Zhao, H. P. Ye, K. Huang, Z. N. Chen, B. W. Li and C. W. Qiu, Sci. Rep. 4, 6 (2014). R. Ghaffarivardavagh, J. Nikolajczyk, R. G. Holt, S. Anderson and X. Zhang, Nat. Commun. 9, 8 (2018). 3) H. C. Tang, Z. S. Chen, N. Tang, S. F. Li, Y. X. Shen, Y. 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1809.09708	1	1809	2018-08-20T08:38:10	Ice-templated poly(vinylidene fluoride) ferroelectrets	[ "physics.app-ph" ]	Ferroelectrets are piezoelectrically-active polymer foams that can convert externally applied loads into electric charge. Existing processing routes used to create pores of the desired geometry and degree of alignment appropriate for ferroelectrets are based on complex mechanical stretching and chemical dissolution steps. As a simple, cost effective and environmentally friendly approach, freeze casting is able to produce aligned pores with almost all types of the materials, including polymers. In this work, we present the first demonstration of freeze casting to create polymeric ferroelectrets. The pore morphology, phase analysis, relative permittivity and direct piezoelectric charge coefficient (d33) of porous poly(vinylidene fluoride (PVDF) ferroelectrets with porosity volume fractions ranging from 24% to 78% were analysed. The long-range alignment of pore channels produced during directional freezing was shown to be beneficial in forming a highly polarised structure after breakdown of air in the pore channels via corona poling. This new method opens a way to create tailored pores and voids in ferroelectret materials for transducer applications related to sensors and vibration energy harvesting.	physics.app-ph	physics	Ice-templated poly(vinylidene fluoride) ferroelectrets Yan Zhang1, Chris R. Bowen1, Sylvain Deville2 1 Department of Mechanical Engineering, University of Bath, Bath, UK 2 Laboratoire de Synthèse et Fonctionnalisation des Céramiques, UMR 3080 CNRS/Saint-Gobain CREE, Cavaillon, France Abstract Ferroelectrets are piezoelectrically-active polymer foams that can convert externally applied loads into electric charge. Existing processing routes used to create pores of the desired geometry and degree of alignment appropriate for ferroelectrets are based on complex mechanical stretching and chemical dissolution steps. As a simple, cost effective and environmentally friendly approach, freeze casting is able to produce aligned pores with almost all types of the materials, including polymers. In this work, we present the first demonstration of freeze casting to create polymeric ferroelectrets. The pore morphology, phase analysis, relative permittivity and direct piezoelectric charge coefficient (d33) of porous poly(vinylidene fluoride (PVDF) ferroelectrets with porosity volume fractions ranging from 24% to 78% were analysed. The long-range alignment of pore channels produced during directional freezing was shown to be beneficial in forming a highly polarised structure after breakdown of air in the pore channels via corona poling. This new method opens a way to create tailored pores and voids in ferroelectret materials for transducer applications related to sensors and vibration energy harvesting. Keywords: porous polymer, ferroelectret, aligned porosity, piezoelectric coefficient, ice templating Introduction Piezoelectric materials manifest themselves by the generation of a charge when subjected to mechanical loads. The direct piezoelectric effect can be used to sense dynamic pressure, acceleration, or change in force and there is also potential for scavenging energy from motion in the surrounding environment [1]. Ferroelectric materials are a sub-class of piezoelectric materials and exhibit piezoelectric properties as a result of a remnant 1 polarisation due to the presence of aligned domains, which have been of interest in sensor and energy harvesting applications [2]. In order to evaluate the performance of such materials, relevant figures of merit such as 𝑑𝑖𝑗 2 /𝜀33 𝜎 for piezoelectric energy harvesting, while the piezoelectric voltage coefficient, such as g33=d33/𝜀33 𝜎 for sensor applications have been widely used, where dij is the piezoelectric charge coefficient, and 𝜎 is the permittivity of the material at constant stress. These figures of merit indicate that a low permittivity, 𝜀33 and high piezoelectric activity are beneficial for sensor and energy during harvesting applications. Ferroelectric ceramics often exhibit high figures of merit for high sensor sensitivity or high energy capability, but they are relatively high density and exhibit poor mechanical flexibility. Ferroelectric polymers exhibit a relatively low piezoelectric activity, but they have a low permittivity, are lightweight and exhibit flexibility which is important for flexible electronics, wearables and stretchable electronics [3]. As an alternative to ferroelectric materials, ferroelectrets are a class of piezoelectrically-active foam manufactured from a non-polar porous polymer whereby gas, such as air, within the pore space can be subjected to electrical breakdown when subjected to a high electric field during a poling process. This process results in opposing electric charges being deposited on the upper and lower surfaces of the pores [4]. As a result of a poling process, a dipole-like structure is formed where the dipole moment can be changed by applying a mechanical stress, thereby leading to a piezoelectric response. The piezoelectric d33 charge coefficient, a measure of the charge generated per unit force, can be an order of magnitude greater than those found in conventional ferroelectric polymers, such as polyvinylidene fluoride (PVDF) and can be comparable or even greater than ferroelectric ceramics [5, 6] while maintaining a high compliance due to their polymeric nature. For example, for sensing applications a ferroelectret polymer exhibited a g33, a measure of the electric field per unit stress, that was 10-150 times higher than ferroelectric PVDF and over a thousand times higher than that of lead zirconate titanate (PZT), due to their high d33 values (e.g. 25-700 pC/N for porous polypropylene) and low permittivity (e.g. 𝜀33 𝜎 =1.12-1.23 for porous polypropylene).[7, 8] Ferroelectret polymers with an average pore diameter of 0.9 µm or a pore height of 4.5 µm and pore width of 1.55 µm were also demonstrated to produce 44.9 nW [9] and 4.35 mW [10] for energy harvesting applications. Therefore, ferroelectrets have gained much interest in low-level mechanical energy harvesting [11] and sensing [4] based on their relatively high piezoelectric coefficient and low permittivity. 2 To create ferroelectret materials with a high electro-mechanical response, a cellular geometry or lens-shaped pore structure is desirable with pores that are elongated in the lateral extension; this can be typically > 10 μm long and only a few μm in height [12, 13]. Such a morphology is beneficial due to the relatively low elastic stiffness of such an anisotropic pore structure in the polarisation direction [14, 15]. Micron-size pores are desirable to achieve micro-discharges within pores, which are interpreted in terms of Paschen breakdown [16]; and large electric fields are required in very small pores. As a result, the majority of existing processing routes have focused on creating cellular or lens-shaped microstructures for ferroelectrets. Current processing routes include biaxial stretching of polymers with embedded foreign particles followed by chemically dissolution of the embedded foreign particles [9, 10], or the injection of the polymer by high-pressure gas to further modify the pore size and shape [17, 18]. Freeze casting, also termed the ice-templating method [19], is an effective and facile technique to prepare materials with tailored pore morphology and anisotropic porosity. This approach involves freezing a colloidal suspension under a unidirectional gradient temperature, followed by sublimation of the solvent. The aligned pore channels formed parallel to the freezing direction are direct replica of the solvent after solidification. Freeze casting has potential to be a cost effective and environmentally friendly approach, and it is feasible to tailor pore characteristics and form aligned pores in almost all types of materials: ceramics, polymers, metals and their composites [19]. To date, more than 30 different types of polymers with straight, aligned and elongated pore channels have been formed by freeze casting for catalysis, separation, biomedical and thermal insulation applications. [19] However, there has been no report to date on the freeze casting of polymers to create polymeric ferroelectrets. In this work we used freeze casting of PVDF to produce a porous ferroelectret material. PVDF is a classical ferroelectric polymer which is partially crystalline and has the dipole moment perpendicular to the polymer chain, especially when the polar all-trans β-phase is dominant [20]. Copolymers of the materials have been employed to achieve a higher crystallinity for improved ferroelectric properties; these include poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) and poly(vinylidene fluoride-hexafluoropropylene) (PVDF-HFP) [21, 22]. PVDF has been selected since freeze casting has been previously employed to form a PVDF microporous membrane with pore sizes 10 µm whose Young's modulus and water flux ability were explored [23], but no 3 piezoelectric properties were reported. Here we have examined the fabrication of the optimised pore structure in PVDF formed by freeze casting, with proof of its ferroelectret nature and corresponding piezoelectric response. A range of polymer solutions at different polymer loading levels were assessed for freeze casting and the microstructure, phase identity, direct d33 piezoelectric charge coefficients and permittivity of the polymers were examined in detail. Experimental Poly(vinylidene fluoride) (PVDF, 6010) powders were used from Solef® (Belgium) and used in the as-received condition. A schematic of the freeze casting process applied to PVDF is shown in Fig. 1. PVDF powders with different weight fractions of 0.2, 0.4, 0.6, 0.8, 1 and 1.2 g were dissolved in 10 g solvent of dimethyl sulfoxide (DMSO, anhydrous≥99.9%, freezing point of 19°C, Sigma-Aldrich) and stirred at 60C for overnight to achieve homogenous solutions; see Fig. 1(A). Other widely used polar solvents (e.g. N-methyl-2-pyrrolidone/NMP, dimethylformamide/DMF, dimethylacetamide/DMAc) with lower melting points of -20 to -61C were not suitable for the demoulding step at room temperature. The prepared PVDF/DMSO solutions were then poured into polydimethylsiloxane (PDMS) mould with a diameter of 20 mm and height of 10 mm. The bottom face of the mould was held on the surface of liquid N2 and the top face of the mould held at an ambient temperature of ~20C to unidirectionally freeze the solution. In a conventional freeze casting process [24], freeze drying is undertaken at low temperature and pressure in order to sublimate the solvent from a solid to a gas. In this work, freeze drying of the frozen PVDF/DMSO was not chosen since DMSO has the potential to contaminate not only the vacuum pump [25], but has an unpleasant sulfur smell [26] with potential health risks during sublimation of the solvent [27]. After freezing, the samples were therefore demoulded and immediately immersed into water to dissolve and remove the solidified DMSO, which was repeated 7-8 times to ensure fully remove the DMSO. The samples were then dried in an oven at 40C for 24hrs to eliminate the remaining water (Fig. 1B). The dried samples were then frozen in liquid N2, followed by cutting to a thickness of ~1.5 mm parallel to the freeze-cast direction using a sharp blade (Fig. 1C). Materials were cut parallel to the freezing direction to pole the pores that were aligned and elongated in the direction normal to the polarisation direction. Corona poling was conducted by applying a DC voltage of 26.8 kV for 30 min at ambient temperature 4 (Fig. 1D). All samples were silver electroded (RS Components, Product No 186-3600, UK) on both sides normal to the freeze-cast direction for piezoelectric and dielectric characterisation. The microstructure of the samples was examined by scanning electron microscopy (SEM, JSM6480LV, Tokyo, Japan). The bulk density of the sintered specimens was measured using Archimedes' principle. The piezoelectric strain coefficient (d33) was measured using a Berlincourt Piezometer (PM25, Take Control, UK) 0.5-6 days after corona poling. To confirm that the measured d33 values originate from the piezoelectric effect, the sample orientation was reversed to ensure the piezoelectric coefficient changes from a positive to negative polarity. The relative permittivity (ε) and dielectric loss (tan δ) were measured in the frequency rage of 1 to 106 Hz with an oscillating voltage of 1 Vrms using an Agilent Technology 4192A impedance analyzer. Fourier transform infrared spectra (FT-IR) of the materials were recorded using a Perkin Elmer Spectrum 100 with a diamond universal ATR attachment. The phase structure of the ceramics was examined by X-ray diffraction (BRUKER D8-Advance, USA) with Cu radiation with 2θ ranging from 10 to 60. Figure 1: Schematic of porous polymer obtained from freeze casting. (A) formation of PVDF/DMSO solution, (B) the freeze casting process, (C) sample sectioning parallel to freezing direction after solvent removal, (D) corona poling of sectioned PVDF. 5 Results Microstructural observations of the freeze cast porous PVDF materials, phase analysis, dielectric spectroscopy and piezoelectric properties of the poled freeze-cast materials are now described. Microstructure Figure 2 A -- F show the porous structure of PVDF prepared from the solutions with weight ratios of PVDF/DMSO from 0.2/10 to 1.2/10. At a ratio of 0.2/10 with the minimum PVDF content, adjacent pore channels with a pore size less than 5 µm were formed that were overlapped, see Fig. 2A. A further increase in the weight ratios from 0.4/10 (Fig. 2B) to 0.8/10 (Fig. 2D) led to the formation of more aligned pore channels along the freeze- cast direction, and the pore size normal to the freeze-cast direction decreased from 25 ± 3 µm in the 0.4/10 sample to 20 ± 2 µm in the 0.8/10 sample (Fig. 2D). At low magnification aligned pores can be observed on the upper sample surface, where in Fig. 3A mm-scale length pores can be seen in the freeze-cast PVDF with a ratio of 0.4/10. A similar low magnification side view, see inset of Fig. 3B, reveals the lens-shaped pore morphology. Compared to commercially available ferroelectrets [17], the freeze-cast polymers had a larger pore length with similar pore shape and pore size which might facilitate the generation and deposition of plasma charges on the inner pore surface under the action of a high electric field during the poling process. A further increase in the amount of PVDF to a ratio of 1.0/10 (Fig. 2E) and 1.0/10 (Fig. 2F) resulted in an overlapped pore morphology (Fig. 2E) with the formation of more rounded pores, as in Fig. 2F, rather than an aligned structure; this is similar to the structure of ice-templated ceramics when the solid loading is too high [28]. In general, larger pores are formed from the PVDF/DMSO solution at low PVDF concentrations during directional freezing, since the porous structure is a replica of DMSO crystals. However, for a low PVDF content of 0.2/10, the capillary force [29] formed by water during evaporation during drying leads to shrinkage of the pore channels, thereby making the adjacent pore channels overlap, as shown in Fig. 2A. With an increase of PVDF concentration, there is a reduced effect of the capillary force on pore deformation (Fig. 2B-D) for the 0.4/10 to 0.8/10 samples, due to the lower amount of water left in the samples. However, if PVDF 6 concentration is too high there is a loss of directionality and smaller equi-axed pores were formed; this is possibly due to the high viscosity of the solution during freeze casting [30], (Fig 2E -- F). 7 Figure 2: Scanning electron micrographs of porous freeze cast PVDF with increasing weight ratios of PVDF/DMSO. (A) 0.2/10, (B) 0.4/10, (C) 0.6/10, (D) 0.8/10, (E) 1.0/10, (F) 1.2/10. Figure 3: Scanning electron micrographs of (A) the mm-scale pore length and (B) the prism/lens pore morphology of the freeze-cast PVDF with the weight ratio of 0.4/10. Phase analysis Figure 4 shows the FT-IR and XRD spectra of the freeze cast porous PVDF with different weight ratios of PVDF/DMSO. The FT-IR transmittance spectra are shown in the 550-1500 cm-1 (Fig. 4A), and 800-900 cm-1 (Fig. 3B) ranges. No characteristic peak for either the α- or β- phase was found in all freeze cast samples. Some peaks could be attributed to both β- and γ-phases, namely 1176 cm-1 (Fig. 4A) and 840 cm-1 (Fig. 4B) [31, 32]. 8 However, the representative peak at 1234 cm-1 can be exclusively used to identify the γ-phase characteristic band [33, 34], which is uniquely assigned to the γ-crystalline form [35, 36]. A small peak at 811 cm-1 was also observed, and is also a peak exclusively attributed to the γ-phase [31]. Fig. 4C and Fig. 4D show the X-ray diffraction of the polymers with different weight ratios of PVDF/DMSO. A typical semi-crystalline peak appeared in the XRD curves indicating the semi-crystalline nature of the materials for all weight ratios of PVDF/DMSO. All PVDF samples exhibited peaks centred at a diffraction angle of 20.04 (110) [33] which further confirmed the γ-phase crystal polymorph was dominant in the final materials. Therefore both infrared spectroscopy and XRD spectra in Fig. 4 indicate that the γ-phase was the predominant crystalline presence in the porous PVDF for all PVDF/DMSO weight ratios, which is in agreement with previous conclusions that γ- phase usually was normally obtained from the DMSO solvent [37, 38], regardless of the preparation temperature [39, 40]. Figure 4: (A) FTIR and (B) XRD spectra of porous PVDF with different weight ratios of PVDF/DMSO, (C) and (D) are FTIR and XRD spectra in the range of 800-900 cm-1 and 16-25, respectively. 9 Piezoelectric and frequency dependent dielectric properties Figure 5 A -- D shows the porosity variation and piezoelectric performance of the poled porous PVDF with weight ratios of PVDF/DMSO ranging from 0.2/10 to 1.2/10. The apparent porosity increased from 35 vol.% for 0.2/10 sample to reach the maximum value of 78 vol.% for 0.4/10, followed by a decrease to 24 vol.% for 1.2/10 (Fig. 5A). The higher porosity level of the aligned porous structure may provide more space to retain the plasma charges for piezoelectric activity. As the PVDF/DMSO weight ratio increased from 0.2/10 to 0.8/10, the d33 values increased from 41 ± 1 pC/N for 0.2/10 to 264 ± 2 pC/N for 0.4/10; this was followed by a decrease in d33 for ratios higher than 0.6/10; see Fig. 5B. The d33 values obtained for these materials were comparable with ferroelectrets prepared from stretching and gas injection methods [5, 6, 41], and a commercial ferroelectret with a reported values of 25 pC/N to 200 pC/N [42]. In addition, Fig. 5B clearly shows the almost equal in magnitude and opposite charge accumulations at the two-opposing poled-sides in terms of negatively-poled and positively-poled in all the porous PVDF samples, indicating the piezoelectric origin of measured electrical charge from the applied force. It is known that among the five crystalline polymorphs in PVDF, namely α, β, γ, δ and ε, the α and ε phases are non-polar with no electroactive response [43], while the ferroelectric properties are related to the polar phases of β, γ, and δ. β-PVDF is the most desired phase for ferroelectric applications since it exhibits the highest piezoelectric properties of the available PVDF polymorphs, with β-rich PVDF exhibiting a d33 ~ -30 pC/N [44], compared to a lower d33 ~ -7 pC/N [45] in γ-rich PVDF due to the smaller dipole moment. Therefore, the ferroelectric γ-phase in the freeze cast materials in this work (Fig. 4), is unlikely to be the main contributor to the high piezoelectric response of the freeze cast porous PVDF since the d33 values are typically well in excess of 7 pC/N. This indicates that the porous semi-crystallized PVDF fabricated by ice-templating were piezoelectric, due to the formation of the dipole-like structure via applying a high electric field normal to the freezing direction and pore direction. This is in contrast to electret materials where charge flow is produced by either the change in a dielectric gap or the variation of the overlapping area [46]. Therefore, it can be concluded that the freeze-cast PVDF for all the weight ratios were ferroelectret in nature and, as shown in Fig. 5C. After applying a high poling electric field normal to the freezing direction, the air inside the aligned pore channel were subject to electrical breakdown, thereby depositing the opposite charges on the surface of the 10 pore channel to form the dipole-like structure. Due to the high compliance of the porous polymer material, the polarisation and dipole moment is changed on application of a mechanical stress, thereby leading to an electro-mechanical response. Since the piezoelectric properties of the ferroelectret originate from charged pores, it is of interest to evaluate their surface potential decay with time. The piezoelectric coefficient (d33) of all samples decreased rapidly from 0.5 to 6 days followed by a slow reduction in d33 values from 5 to 6 days measured after corona poling, as shown in Fig. 5D. Normally the surface potential, or d33 values, fall rapidly in the first week for ferroelectrets based on polydimethylsiloxane (PDMS) [47], PDMS/Polyvinyl alcohol (PVA) [48], ethylene vinyl acetate copolymer (EVA) / biaxially oriented polypropylene (BOPP) [13], and fluorinated ethylene propylene (FEP)/polytetrafluoroethylene (PTFE) [49], then reach a more stable value, which can last for at least six weeks using porous polyethylene terephthalate (PET)/ethylene vinyl acetate copolymer (EVA) [50]. High charge capturing ability and low elastic modulus of the porous polymer have been considered as the main reasons for the stabilisation of the piezoelectric response in the ambient atmosphere with time [50]. In addition, the polymer nature and electrical properties, the ratio between the width and length of the elongated pore channel, and the thickness of the sample also play a crucial role in the change in piezoelectric performances of ferroelectrets with time. 11 Figure 5: (A) porosity, (B) piezoelectric coefficient (d33), (C) schematic of the plasma discharges on the surface and (D) aging performance of the porous PVDF with different weight ratios of PVDF/DMSO. Figure 6 shows the dielectric properties of the porous PVDF measured from 1 Hz to 1MHz with different weight ratios ranging from 0.2/10 to 1.2/10, respectively. The relative permittivity of all the porous PVDF samples exhibited a frequency dependence at low frequency (~30 Hz) and a more frequency independent behaviour at higher frequencies (> 1 kHz, Fig. 6A), which is a common behaviour for disordered materials and which obeys the universal law of dielectric response [51]. The low frequency dispersion in permittivity is likely to be due to a small amount of conductivity in the sample [52] and this observation agrees with the higher dielectric loss (loss tangent) in the materials at low frequency (Fig. 6B). If the permittivity at the same frequency of 1 kHz is examined for all the samples (inset of Fig. 6A), the relative permittivity initially decreased from 3.0 at 0.2/10 until it reached a minimum of 1.5 at a weight ratio of 0.4/10, it then increased to 3.5, as the ratio increased to 1.2/10. Based on the microstructural observations, Fig. 2, and porosity results in Tab.1, the increase in porosity of PVDF from 35% to 78% as the weight ratios increased from 0.2/10 to 0.4/10 led to a reduction in permittivity of the porous PVDF and the subsequent increase relative permittivity was a result of the porosity decrease from 64% to 24% as the weight ratios increased from 0.6/10 to 1.2/10 (Fig. 6A). The dielectric loss (Fig. 6B) also revealed that at the same frequency the change of the dielectric loss varied in accordance with the change of the relative permittivity and porosity; see inset of Fig. 6A at 1 kHz. The combination of low permittivity and high piezoelectric activity can lead to high sensor sensitivity due to high 12 g33 (=d33/𝜀33 𝜎 ) coefficients, e.g. 19.9 Vm/N of 0.4/10 porous PVDF at 1 kHz compared with that of 0.067 Vm/N in the piezoelectric porous lead zirconate titanate (PZT) ceramic [53]. Figure 6: (A) Relative permittivity and (B) dielectric loss of the porous PVDF with different weight ratios of PVDF/DMSO. Conclusions In contrast to conventional processing methods to prepare ferroelectret materials with a cellular pore morphology, we have developed a new strategy to fabricate PVDF ferroelectret materials using an ice- templating method. The ferroelectret polymers are foams with charged pores and have the potential to be used in flexible wearable electronics, sensors and energy harvesters. The generated internal quasi-permanent macro-dipoles in the pore void can be induced by Paschen breakdown by application of a high electric field, where leads to piezoelectric properties. The ice-templated porous PVDF polymers formed by this new processing route exhibited elongated pore channels which were beneficial to achieve a high ferroelectret response. A maximum piezoelectric d33 coefficient of ~264 pC/N was obtained for a porous ferroelectret PVDF with a pore size of 25 µm, which is significantly higher than a d33 of 30 pC/N for dense -phase ferroelectric PVDF films. In conclusion, this is the first demonstration of freeze casting in terms of its reliability and stability in the formation of ferroelectret polymers with highly aligned pore structures. 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1809.09765	1	1809	2018-09-26T00:19:36	Tunable RF and microwave photonic sideband generator based on cascaded 49GHz and 200GHz integrated ring resonators	[ "physics.app-ph", "physics.optics" ]	We demonstrate a continuously RF tunable orthogonally polarized optical single sideband (OP-OSSB) generator based on dual cascaded micro-ring resonators. By splitting the input double sideband signal into an orthogonally polarized carrier and lower sideband via TE- and TM-polarized MRRs, an OP-OSSB signal is generated. A large tuning range of the optical carrier to sideband ratio of up to 57.3 dB is achieved by adjusting the polarization angle of the input light. The operation RF frequency of the OP-OSSB generator can be continuously tuned with a 21.4 GHz range via independent thermal control of the two MRRs. Our device represents a competitive approach towards OP-OSSB generation with wideband tunable RF operation, and is promising for photonic RF signal transmission and processing in radar and communication systems.	physics.app-ph	physics	Tunable RF and microwave photonic sideband generator based on cascaded 49GHz and 200GHz integrated ring resonators Xingyuan Xu,1,8 Jiayang Wu,1,8 Linnan Jia,1 Mengxi Tan,1 Thach G. Nguyen,2 Sai T. Chu,3 Brent E. Little,4 Roberto Morandotti,5,6,7 Arnan Mitchell,2 and David J. Moss1 1Centre for Micro-Photonics, Swinburne University of Technology, Hawthorn, VIC 3122, Australia 2ARC Centre of Excellence for Ultrahigh-bandwidth Devices for Optical Systems (CUDOS), RMIT University, Melbourne, VIC 3001, Australia 3Department of Physics and Material Science, City University of Hong Kong, Hong Kong, China. 4 State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Science, Xi'an, China. 5INRS-Énergie, Matériaux et Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X 1S2, Canada. 6National Research Uni of Information Technologies, Mechanics and Optics, St. Petersburg, Russia. 7Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China. 8These authors contribute equally to this paper. E-mail: [email protected] Abstract We demonstrate a continuously RF tunable orthogonally polarized optical single sideband (OP-OSSB) generator based on dual cascaded micro-ring resonators. By splitting the input double sideband signal into an orthogonally polarized carrier and lower sideband via TE- and TM-polarized MRRs, an OP-OSSB signal is generated. A large tuning range of the optical carrier to sideband ratio of up to 57.3 dB is achieved by adjusting the polarization angle of the input light. The operation RF frequency of the OP-OSSB generator can be continuously tuned with a 21.4 GHz range via independent thermal control of the two MRRs. Our device represents a competitive approach towards OP-OSSB generation with wideband tunable RF operation, and is promising for photonic RF signal transmission and processing in radar and communication systems. Keywords: Micro-ring resonator, radio frequency, single sideband modulation 1. Introduction Microwave photonics has attracted great interest in a wide range of applications in radar and communications systems [1 -- 4] due to its numerous intrinsic advantages such as broad RF operation bandwidth, low loss, and strong immunity to electromagnetic interference [5-8]. As one of the key technologies of microwave photonic systems, modulation formats have a significant impact on the overall system performance [9-11]. Offering advantages such as overcoming dispersion-induced distortion, enhanced spectral efficiency, and the ability to separately manipulate the optical carrier and sidebands via polarization-sensitive optical components, orthogonally polarized optical single sideband (OP-OSSB) modulation has been widely exploited in applications ranging from antenna beamforming to microwave photonic signal processing [12-16]. Many approaches have been demonstrated to realize OP- OSSB generation, including using specially designed modulators such as acoustic optical modulators [17], Sagnac- loop-based modulators [18], dual-polarization quadrature phase shift keying modulators [19], and polarization modulators [20]. In other approaches, differential group delay elements were used to cross-polarize the optical carrier and the sideband by exploiting birefringence [15,16]. In addition, fiber-based stimulated Brillouin scattering has been used to control the polarization of optical signals to achieve OP-OSSB generation [21,22]. However, the above approaches face limitations of one form or another. On the one hand, RF couplers can introduce an electrical bandwidth bottleneck for the entire system, while fiber-based methods face limitations Fig. 1. Schematic of the proposed orthogonally polarized optical single sideband (OP-OSSB) generator. LD: laser diode. EOM: electro-optical modulator. PC: polarization controller. DSB: double sideband. OSA: optical spectrum analyzer. OPM: optical power meter. 45º POL: optical polarizer with the polarization direction having an angle of 45º to the TM axis. PD: photodetector. VNA: vector network analyzer. RFG: RF generator. in terms of footprint and stability, important for moving the technology beyond the laboratory. polarization) MRR to the add-port of the first (49GHz, TM) MRR (Fig. 1(iii)), thus achieving OP-OSSB modulation. Integrated microwave photonics is a competitive solution to address these challenges [23], offering a reduced footprint and higher reliability [24]. Recently, we reported an OP- OSSB generator that operated at fixed RF frequencies based on a micro-ring resonator (MRR) that supported both TE- and TM-polarizations [25]. Here, we report a continuously tunable (in RF frequency) OP-OSSB generator based on dual cascaded integrated MRRs. The operation RF frequency of the OP- OSSB generator, determined by the spectral interval between the TE and TM resonances, can be dynamically tuned via separate thermo-optical control of the two MRRs, resulting in operation over a wide RF tuning range. Moreover, by controlling the polarization angle of the input light, a large dynamic tuning range in the optical carrier-to-sideband ratio (OCSR) of up to 57.3 dB is demonstrated. 2. Operation principle Figure 1 shows a schematic of the wideband tunable OP- OSSB generator. Continuous-wave light from a tunable laser source is intensity-modulated by an RF signal to generate a double sideband signal with a polarization angle θ to the TE- axis (Fig. 1(i)), and then fed into the two cascaded MRRs that support TE- and TM-polarization modes. When the wavelength of the optical carrier and the input RF frequency match with the orthogonally polarized resonances of the two MRRs, the optical carrier and one sideband of the double sideband signal can be dropped (Fig. 1(ii)). After that, the dropped optical carrier and sideband are combined together by connecting the drop-port of the second (200GHz, TE To analyze the polarization states of our device, we use the Jones matrix formalism. While other methods exist, such as the Poincaré sphere and Stokes parameters [26], we use the Jones matrix for simplicity since the polarization eigenmodes of the MRRs serve as a natural basis. The transmission of the dual MRRs can be written as (0.1) where DTE and DTM are the drop-port transfer functions of the 49GHz (TE) MRR and 200GHz (TM) MRR given by (0.2) (0.3) where tTE, tTM, kTE and kTM are the field transmission and cross- coupling coefficients between the bus waveguide and the ring (t 2 + k 2 = 1 for lossless coupling), aTE and aTM represent the round-trip transmission factors, ϕTE = 2πLTE×neff_TE/λ and ϕTM=2πLTM×neff_TM/λ are the single-pass phase shifts of the TE-MRR and TM-MRR, respectively, with LTE and LTM denoting the round-trip length, neff_TE and neff_TM denoting the effective indices, and λ denoting the wavelength. 2 00TETMDRD2221TETETETETETETEiikaeDtae2221TMTMTMTMTMTMTMiikaeDtae Fig. 2. (a) Schematic illustration of the 200GHz FSR MRR, (b) TE and (c) TM mode profiles of the 200GHz MRR. (d) Schematic illustration of the 49GHz FSR MRR, (e) TE and (f) TM mode profiles of the 49GHz FSR MRR. For a general optical field input E0 [cosθ sinθ ], the output field of the dual MRRs is (0.4) As reflected by the above equation, the optical power of the spectral components dropped by the 49GHz (TE) MRR and 200GHz (TM) MRR are proportional to cos2θ and sin2θ, respectively. Thus, the OCSR (with the 49GHz MRR for the carrier and the 200GHz MRR for the sideband) is given by (0.5) which can be continuously tuned by adjusting θ. Since cot2θ can infinitely approach 1 or 0 as θ approaches 0 or π/2, a large Fig. 3. Measured transmission spectra of the (49GHz FSR MRR) and 200GHz FSR MRR. tuning range of the OCSR can be produced. Moreover, the generated OP-OSSB signal can be converted back into the RF domain by passing it through an optical polarizer (Fig. 1(iv)). The operation RF frequency of the proposed OP-OSSB generator is determined by the spectral interval between adjacent resonances of the 49GHz and 200GHz MRR. Thus, with separate thermal controls of the MRRs, tunable OP- OSSB generation over a wide RF tuning range can be realized. 3. Experimental results We fabricated 49GHz FSR and 200GHz FSR integrated MRRs that each support both TE- and TM- polarization modes, utilizing the TM-polarized resonances of the first MRR (49GHz), and the TE-polarized resonances of the second (200GHz) MRR. Figures 2(a, d) show a schematic of the two MRRs used in our experiment, which were both fabricated on a high-index doped silica glass platform using CMOS compatible fabrication processes [27-29]. First, high- index (n = ~1.70 at 1550 nm) doped silica glass films were deposited using standard plasma enhanced chemical vapour deposition, then patterned using deep UV photo- lithographically and etched via reactive ion etching to form waveguides with exceptionally low surface roughness [30- 32]. Finally, silica glass (n = ~1.44 at 1550 nm) was deposited as an upper cladding. The waveguides were designed to feature a nearly symmetric cross-section (1.5 μm × 2 μm for the 49GHz ring resonator [33] and 1.45 μm × 1.5 μm for the 200GHz ring resonator [29]), enabling both MRRs to support both TE and TM modes. The calculated TE and TM mode 3 00coscossinsinTETMoutDEREED2OCSR()cot Fig. 4. Measured (a) transmission spectra of the 49GHz (TM) MRR, 200GHz FSR (TE) MRR, and the combined OP-OSSB generator. (b) Zoom-in spectra of (a) with one TE polarized resonance and one TM polarized resonance. (c) Transmission spectra around one TM-polarized resonance of the 49GHz FSR MRR. nm [34, 35] with a Q factor of 1.5×106, while the 200GHz MRR had a radius of ~135 μm, corresponding to an FSR of ~1.6 nm [36-39] and a Q factor of 1.2×106, which reduced leakage of the undesired sideband from the 200GHz MRR's unused resonances. The through-port insertion loss was ~1.5 dB after being packaged with fiber pigtails via butt coupling and employing on-chip mode converters. The devices have been shown to exhibit negligible nonlinear loss (two photon absorption) up [40]. The measured transmission spectra of the two MRRs are shown in Fig. 3, in which the FSRs and operation RF frequency are clearly reflected. to 25GW/cm2 (TM) MRR. Figure 4 shows The two MRRs were then connected via polarization maintaining fiber pigtails with the 49GHz MRR's through- port being connected to the 200GHz MRR's input. Both of the MRRs' drop-ports were then combined by connecting the drop-port of the 200GHz (TE) MRR to the add-port of the 49GHz the measured transmission spectra of the dual MRRs. As reflected by the dual resonances, both of the MRRs supported dual polarization modes. The first (49 GHz FSR) and second MRR (200GHz FSR) served as TM- and TE-MRRs for the OP- OSSB generation, respectively. The operation RF frequency was determined by the spectral interval between adjacent orthogonally polarized resonances (Fig. 4(b)). The 49GHz MRR featured a high Q factor, corresponding to a 20dB- Fig. 5. Optical spectra of the generated orthogonally polarized OSSB signal. profiles of the MRRs are shown in Figs. 2(b -- c, e -- f). The difference between the effective indices of the TE and TM modes (49GHz MRR: 1.627 for the TE mode and 1.624 for the TM mode, 200GHz: 1.643 for the TE mode and 1.642 for the TM mode) resulted in slightly different free spectral ranges (FSRs) for the TE and TM resonances and a wide spectral interval between them in the optical communications band (TE/TM separations of ~16.8 GHz and ~41.2 GHz for the 49GHz and 200GHz MRRs, respectively). The radius of the 49GHz MRR was ~592 μm, corresponding to an FSR of ~0.4 Fig. 6. Measured (a) transmission spectra of the dual MRRs and (b -- c) optical spectra of the generated orthogonally polarized OSSB signal with continuously tunable OCSR. 4 Fig. 7. Measured (a) optical transmission spectra, and (b) RF transmission response of the OP-OSSB generator with thermo-optical control. bandwidth of ~1.04 GHz (Fig. 4(b)), indicating a high rejection ratio of the optical carrier and lower accessible RF frequency down to the sub-GHz level for the OP-OSSB generator. During the experiment, we tuned the carrier wavelength to one of the TE resonances of the 200GHz MRR centered at ~1549.78 nm, and drove an intensity modulator (ixBlue) with an RF signal such that the lower sideband could be dropped by the adjacent TM resonance of the 49GHz MRR. The orthogonally polarized carrier and lower sideband were obtained at the output of the dual MRRs, where the optical power of the upper sideband was suppressed by over 35 dB as compared with that of the lower sideband, as shown in Fig. 5. As mentioned, the ratio between the orthogonally polarized optical carrier and lower sideband could be tuned via the input polarization angle (θ the corresponding transmission of the dual MRRs (Fig. 6(a)) as θ was varied. The extinction ratio between TE and TM resonances varied from 20.5 dB to -- 31.1 dB, corresponding to a dynamic tuning range of up to 51.1 dB for the OSCR. Figures 6(b) -- (c) show the optical spectra of the generated OP- OSSB signal with input RF frequencies at 19.7 GHz and 26.6 GHz. Continuously variable OCSRs ranging from −21.1 to 36.2 dB and from −18.1 to 38.9 dB were achieved for the 19.7 in Fig. 1). We measured GHz- and 26.6 GHz- RF input, respectively, yielding a large OCSR tuning range of up to 57.3 dB for our OP-OSSB generator. We note that the orthogonal polarization modes of the cascaded MRRs could also potentially provide an additional control dimension for optical logic gates, thus serving as a promising candidate for optical computing functions [41,42]. To achieve wide RF tunability, we varied the spectral interval between the TE resonances of the 200GHz MRR and the TM resonances of the 49GHz MRR by applying separate thermal controls to two devices [43]. The temperature of the 49GHz (TM) MRR was varied from 20 ºC to 36 ºC while the temperature of the 200GHz (TE) MRR was maintained at 25 ºC. Figure 7(a) shows the measured transmission spectra of the dual MRRs as a function of temperature, where the 49GHz MRR TM polarized resonance was thermally tuned over a range of 0.2 nm while the 200GHz MRR TE-polarized resonance was fixed, thus leading to over 20 GHz RF tuning range for our OP-OSSB generator. To reflect the wide RF operation of our approach, the OP-OSSB signal was converted into single polarization via a polarizer and detected by a photodetector. The RF transmission response of the system was measured by a vector network analyzer. As shown in Fig. 7(b), wideband RF operation up to 23.14 GHz was Fig. 8. (a) Optical spectra and (b) extracted operation RF frequency of the generated OP-OSSB signals with thermal tuning. 5 demonstrated. The optical spectra of the OP-OSSB signals with tunable RF operation were measured and shown in Fig. 8(a). As the chip temperature of the 49GHz (TM) MRR was varied from 22 ºC to 35 ºC, the RF operation frequency of the OP-OSSB generator changed from 1.81 GHz to 23.27 GHz with a fit slope of −1.66 GHz / ºC (Fig. 8(b)), thus confirming the wide tuning range of our approach. The RF operational bandwidth of our OP-OSSB generator was limited by the thermal controller (~15 ºC tuning range). Covering the entire FSR of the TM-MRR (49 GHz) would only require a thermal tuning range of 29.5 ºC which is readily achievable [43]. We note that the small change in FSR with temperature can easily be compensated for by the calibration of the device. Furthermore, by using multiply FSR spaced TM resonances, the RF tuning range can be increased arbitrarily, reaching even the THz region -- well beyond that of electrical approaches [44]. Since the cascaded micro-ring resonators are passive filtering devices, they did not contribute to the performance of the generated orthogonally polarized optical single sideband signals in terms of coherence/dephasing time. The dephasing time of the generated signals in our case was mainly determined by the coherence length Lcoh of our laser, given by [45] where λ is the central wavelength of the source (~1550 nm), n is the refractive index of fiber (~1.45), and Δλ is the full width at half maximum (FWHM) spectral width of the source. Our laser (TUNICS T100S-HP) had a 400 kHz FWHM spectral width, yielding a coherence length of ~414 m. (3.1) Here, we employed high-Q MRRs for the OP-OSSB generation, which support a narrow instantaneous RF bandwidth. For RF applications requiring a broad instantaneous bandwidth, either a lower Q MRR [46] or a higher order filter [47-50] can be employed to replace the high-Q TM-MRR in our experiment. The former can yield a 3dB bandwidth from 2 to 12 GHz corresponding to a Q factor ranging from 60,000 to 10,000, while the latter can achieve a 3dB bandwidth of 100 GHz or even higher. It should also be noted that the two MRRs can be further integrated on the same chip, with the spectral interval tuned by employing separate thermo-optical micro-heaters [51]. Finally, in this paper the micro-ring resonators based on this CMOS compatible platform are used as passive linear devices and so the issue of two photon absorption, important for nonlinear functions [52,53], is not relevant and so in principle any integrated optical platform with the appropriate linear optical properties could be used. 4. Conclusion We propose and experimentally demonstrate an orthogonally polarized optical single sideband (OP-OSSB) generator based on dual integrated MRRs. By splitting the input double sideband signal into an orthogonally polarized carrier and lower sideband via TE- and TM-polarized MRRs, an OP-OSSB signal can be generated. A large tuning range for the optical carrier to sideband ratio of up to 57.3 dB was achieved by adjusting the polarization angle of the input light. The operational radio frequency of the OP-OSSB generator could be widely varied via separate thermo-optical control of the two MRRs, resulting in a broad RF tuning range of over 21.4 GHz. This approach provides a new way to realize OP- OSSB generation with wideband tunable RF operation, which is promising for RF photonic signal processing in radar and communication systems. Acknowledgments This work was supported by the Australian Research Council Discovery Projects Program (No. DP150104327). 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1806.01446	1	1806	2018-06-05T00:37:21	Two-photon absorption coefficient determination with a differential F-scan technique	[ "physics.app-ph" ]	In this paper we present a modification to the recently proposed transmission F-scan technique, the differential F-scan technique. In differential F-scan technique the programmed focal distance in the electronic-tunable lens oscillates, allowing the light detector of the setup to record a signal proportional to the derivative of the signal recorded with an F-scan. As for the differential Z-scan a background-free signal is obtained, but also the optical setup is simplified and the available laser power is double. We also present and validate a new fitting-procedure protocol that increments the accuracy of the technique. Finally, we show that fitting a signal from differential F-scan or the derivate of the signal of transmission F-scan is more accurate than simply fitting the signal from F-scan directly. Results from two-photon absorption at 790 nm of CdS, ZeSe and CdSe are presented.	physics.app-ph	physics	Two-photon absorption coefficient determination with a differential F-scan technique E RUEDA,1 J H SERNA,2 A HAMAD AND H GARCIA3,* 1Grupo de Óptica y Fotónica, Instituto de Física, U de A, Calle 70 No. 52-21, Medellín, Colombia 2Grupo de Óptica y Espectroscopía, Centro de Ciencia Básica, Universidad Pontificia Bolivariana, Ca. 1 No. 70-01, Campus Laureles, Medellín, Colombia 3Department of Physics, Southern Illinois University, Edwardsville, Illinois, 60026, USA [email protected] Abstract: In this paper we present a modification to the recently proposed transmission F-scan technique, the differential F-scan technique. In differential F-scan technique the programmed focal distance in the electronic-tunable lens oscillates, allowing the light detector of the setup to record a signal proportional to the derivative of the signal recorded with an F-scan. As for the differential Z-scan a background-free signal is obtained, but also the optical setup is simplified and the available laser power is double. We also present and validate a new fitting- procedure protocol that increments the accuracy of the technique. Finally, we show that fitting a signal from differential F-scan or the derivate of the signal of transmission F-scan is more accurate than simply fitting the signal from F-scan directly. Results from two-photon absorption at 790 nm of CdS, ZeSe and CdSe are presented. © 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement OCIS codes: (190.0190) Nonlinear optics; (120.0120) Instrumentation, measurement, and metrology; (190.4180) Multiphoton processes. References and links 1. J. H. Bechtel and W. L. Smith, "Two-photon absorption in semiconductors with picosecond laser pulses," Phys. Rev. B 13(8), 3515–3522 (1976). 2. E. W. Van Stryland, M. a. Woodall, H. Vanherzeele, and M. J. Soileau, "Energy band-gap dependence of two- 3. photon absorption," Opt. Lett. 10(10), 490 (1985). 1M. Sheik-Bahae, A. a. Said, T.-H. Wei, D. J. Hagan, and E. W. Van Stryland, "Sensitive measurement of optical nonlinearities using a single beam," IEEE J. Quantum Electron. 26(4), 760–769 (1990). 4. T. Xia, D. J. Hagan, M. Sheik-Bahae, and E. W. Van Stryland, "Eclipsing Z-scan measurement of lambda/10^4 wave-front distortion," Opt. Lett. 19(5), 317–319 (1994). 5. W. Zhao and P. Palffy-Muhoray, "Z-scan technique using top-hat beams," Appl. Phys. Lett. 63(12), 1613 (1993). 6. M. Martinelli, S. Bian, J. R. Leite, and R. J. Horowicz, "Sensitivity-enhanced reflection Z-scan by oblique incidence of a polarized beam," Appl. Phys. Lett. 72(12), 1427–1429 (1998). 7. M. Martinelli, S. Bian, J. R. Leite, and R. J. Horowicz, "Sensitivity-enhanced reflection Z-scan by oblique 8. 9. incidence of a polarized beam," Appl. Phys. Lett. 72(12), 1427–1429 (1998). J. Serna, E. Rueda, and H. García, "Nonlinear optical properties of bulk cuprous oxide using single beam Z- scan at 790 nm," Appl. Phys. Lett. 105(19), 191902 (2014). J.-M. Ménard, M. Betz, I. Sigal, and H. M. van Driel, "Single-beam differential z-scan technique," Appl. Opt. 46(11), 2119 (2007). 10. R. Kolkowski and M. Samoc, "Modified Z -scan technique using focus-tunable lens," J. Opt. 16(12), 125202 (2014). 11. J. Serna, A. Hamad, H. Garcia, and E. Rueda, "Measurement of nonlinear optical absorption and nonlinear optical refraction in CdS and ZnSe using an electrically focus-tunable lens," in International Conference on Fibre Optics and Photonics, 2014 (2014). 12. R. L. Sutherland, Handbook of Nonlinear Optics (CRC Press, 2003). 13. T. Krauss and F. Wise, "Femtosecond measurement of nonlinear absorption and refraction in CdS, ZnSe, and ZnS," Appl. Phys. Lett. 65(March 1994), 1739–1741 (1994). 14. B. S. Wherrett, "Scaling rules for multiphoton interband absorption in semiconductors," J. Opt. Soc. Am. B 1(1), 67 (1984). 1. Introduction In the past decades, several optical techniques have been proposed to measure nonlinear optical properties such as two-photon absorption (TPA) coefficient for different types of materials, especially metals, organic and inorganic semiconductors [1,2]. Among them, Z-scan is a particularly widely used technique due to its relatively simple optical setup and data treatment [3]. It is based on the scanning of spatial beam modifications suffered by a laser beam after interacting with a sample, while it is focused and defocused in time: when the sample is near the focal point of the beam the high intensities generated produce nonlinear phenomena such variations in the refractive index and multi-photon absorption. However, some problems, related to laser fluctuations, beam alignment and mechanical vibrations can influence the results obtained, compromising the sensitivity of the technique. To overcome these limitations, modifications to the basic Z-scan setup were proposed in the following years. To enhance the sensitivity of the technique Xia et al. [4] replaced the far-field aperture in the standard Z-scan by an obscuration disk that blocks most of the beam, while Zhao et al. [5] used a top-hat beam instead of a Gaussian beam, and Martinelli et al. [6] measure the reflected beam from the sample in a Brewster angle configuration. To improve the signal to noise ratio some authors have used balance-detection systems [7,8], while Ménard et al. [9] introduce the differential Z-scan where a piezo-transducer device generates an oscillatory motion to induces a periodic modulation of the beam intensity at the sample, which in turn produces a modulation of the transmitted light proportional to the spatial derivative of the transmitted light, and therefore provides a background-free measurement. More recently, a new technique, that is a variation of Z-scan, was proposed. This method, which is called F-scan [10,11], use an electrically focus-tunable lens (EFTL) instead of a fixed lens to generate different focal points, allowing to replace the translation stage and leaving the sample fixed in space, i.e. eliminating mechanical movements from the setup. The focal distance in the EFTL is a function of the applied current to the lens. Analogously to Ménard et al. for the case of Z-scan, we present in this paper an open aperture differential F-scan technique (DF-scan) to determine the nonlinear absorption optical properties of materials. The setup has been oversimplified by using an EFTL and at the same time modulating the focal length of the EFTL with a rectangular low frequency signal that can be detected with a PSD (phase sensitive detector), in our case a lock-in amplifier, increasing the sensitivity of the system and reducing or eliminating laser fluctuations. 2. Transmission F-scan (TF-scan) The F-scan experimental setup depicted in Fig. 1. is used for the determination of the two- photon absorption (TPA) coefficient (open aperture architecture). Fig. 1. TF-scan experimental optical setup for determination of TPA coefficients (open-aperture architecture). A laser Gaussian beam modulated with a chopper impinges on an EFTL which is a lens over a specific range when an electric current that has the capability to vary its focal distance is applied to it (see Fig. 2), focusing the Gaussian beam at different positions. The sample is placed at a fixed position inside the range of the EFTL. The light transmitted through the sample is collected by a photodetector PD1. The output signal is then filtered with a Lock-in amplifier and processed with an acquisition data system. Fig. 2. OPTOTUNE-10-30-C electrically focus-tunable lens. This type of lens changes its shape (curvature) due to an optical fluid sealed off by a polymer membrane, when a current is applied. To determine the TPA coefficient β we measured the transmittance of the nonlinear medium as a function of the focal length, f, (see Fig. 1), collecting all light transmitted through the sample. When the distance 𝑑𝑠 − 𝑓 is large the normalized transmittance has a value close to unity because linear optical effects are produced in the sample. In contrast, small values of 𝑑𝑠 − 𝑓 imply that the laser beam is focused near the sample, thus increasing the optical intensity and generating nonlinear optical phenomena such as TPA. The TPA coefficient is obtained by fitting a theoretical curve (Eq. (9)) to the experimental data, using β as the fitting parameter, and under the assumption that all the experimental parameters are known. A typical experimental curve is shown in Fig. 10(left). EFTL characterization Fig. 3 shows the dependence of the EFTL optical power on the applied current and expose the disagreement between the experimental data and the data reported by the manufacturer. In the T-Fscan technique it is crucial to know the focal length with high accuracy in order to obtain . Therefore, the characterization of the EFTL optical power on the applied correct values of current has to be done with high-precision. fsdFig. 3. The optical power, , of the EFTL as a function of the applied current. (circles) Experimental data; (continuous line) fit of the experimental data using Eq. (1); (dashed line) data provided by Optotune Inc. Different techniques can be used to obtain the correct dependence of the EFTL optical as a function power on the applied current (circles in Fig. 3) by measuring the focal length of current. We used a laser beam profiler to measure as a function of the applied current. Another way is to use the TPA phenomena: by placing a sample with a nonzero TPA coefficient at two different distances from the EFTL and finding the values of the applied current that produce the lowest intensity for each of the locations. The sample distance from the EFTL will correspond to the EFTL focal length that produced a minimum transmission. Then, using the relation , the EFTL optical power is obtained as a function of current. In our case the experimental data was fitted obtaining the following expression (continuous line in Fig. 3): where (1) is the applied current measured in mA. Another important experimental parameter for the correct determination of the nonlinear optical parameters is the beam-waist radius . Typically, for spherical lenses and assuming that the beam has a spatial Gaussian profile, the radius of the beam at the beam waist is determined as a function of the focal length with the equation: (2) where . But being aware of the existence of optical aberrations on the optical system that distort the wavefront of the is the wavelength of the incident beam with spot diameter beam, a correction factor is needed in order to correctly calculate the beam waist. Thus, Eq. (2) is replaced by (3) ff1/f0.0451.522JJ0w02()wDffDfC02()fDwffCTo determine the correction factor we used a laser beam profiler to measure the beam waist at each focal plane. Then, by using as the fitting parameter between the experimental data and Eq. (3), a correction factor was obtained for the special case of our EFTL. Fig. 4 shows the difference between the corrected and non-corrected beam-waist diameter value as a function of the EFTL focallength. Fig. 4. Beam-waist diameter as a function of EFTL focal length. (circles) Experimental data measured with a laser beam profiler; (dashed line) beam waist diameter calculated with Eq. (2); (continuous line) beam waist diameter calculated with Eq. (3) and . Once the beam-waist radius is correctly determined, it is possible to calculate with precision (Eq. (4)) at the sample surface for every programed EFTL focal length, the beam radius , (4) where is the Rayleigh range. Fig. 5 shows the dependence of the beam radius at the sample location as a function of the EFTL focal length. Notice the difference between the results obtained with and without the corrected beam-waist radius. Also notice the asymmetry relative to the sample location. For values smaller than the radius at the sample increases faster than those for values larger than . This will cause the shape of the TF-scan to be asymmetric around . Therefore, experimentally, we must normalize the transmitted intensity relative to the intensity corresponding to the shortest focal lengths used in the experiment. fC1.36fC1.36fC()wf20()1()sdfzfwf200()()/wzfffsdfsdsdFig. 5. Beam radius at the sample as a function of the EFTL focal length. The continuous and dashed lines are the corrected (Eq. (3)) and not corrected (Eq. (2)) beam waist radius respectively. For this plot we used and . Theoretical background The laser beam in our experimental setup has a Gaussian spatial profile and a hyperbolic secant temporal profile. Therefore, at the front surface of the sample, the incident beam intensity as a function of the EFTL focal length is given by: (5) In the above equation is the radial position with respect to the optical axis, is time, is the peak intensity of the beam at sample position as a function of the EFTL focal length: , where is the full width at half-maximum pulse duration and . (6) Here is the average power of the incident laser beam at the sample, and is the laser pulse repetition rate. The intensity at the exit surface of the sample can be written as: , (7) where is the thickness of the sample, the linear absorption coefficient, is the reflection coefficient of the sample, is is the two-photon absorption coefficient (TPA), and is the effective sample thickness. Thus, the transmittance at the detector plane can be express as: , (8) 0wmm2.0 D10. cm7sdf2200,,(exp2sc)eh()inrtwIrftIffrt0/(2ln(12))0()If022ln(12)()()avgwPIffavgP2(1)(,,)(1)(,,,,())1LinoutineffIrRIrfteRIrfLfttLR1/LeffLe201ln1()sech()()d()BfTfBfwhere can be simplified when and [12]: . The transmittance given by Eq. (8) . (9) As gets closer to one, more terms of the sum are need it. Thus, one must use at least in order to guarantee that the obtained value of is not underestimated. Otherwise, the obtained value of will be smaller than its actual value. 3. Differential F-scan (DF-scan) To reduce noise in TF-scan, or in any intensity scanning technique, due to laser fluctuations where the change in the transmission is small compared to these fluctuations, Ménard et al. [9] proposed a method where the sample was mount on an oscillating-actuator in a Z-scan setup, thus, for an amplitude the transmission signal around (and near) position and frequency will be , (10) where is time. Eq. (10) is valid as far as the oscillating amplitude is comparable to the Rayleigh range of the beam. If a lock-in amplifier is used with a reference signal coming from the piezoelectric actuator, then only the amplitude of the signal given by Eq. (11) is detected by the lock-in amplifier: . (11) This background-free technique reduces the laser fluctuation noise and improves the sensitivity of the technique. One feature of the EFTL is that its focal length can be modulated with different types of signal profiles (rectangular, triangular or sinusoidal) with a frequency range in its modulation between 0.2 up to 2000 Hz. This allowed us to modify the TF-scan into a DF-scan without using piezoelectric actuators, and also using the modulated signal as the reference for a lock-in amplifier; being the signal proportional to the derivative of the transmitted signal. Thus, for the case of the DF-scan technique, is replaced by the focal distance , and using Eq. (9) the derivative in Eq. (11) becomes , (12) where , and . "Normalized" DF-scan For the case of TF-scan, normalization of the experimental data in order to fit it by using the analytical model is simply done by dividing the data with respect to the lock-in amplifier signal 0(1)()()effRIBffL2ln(12)/t()1Bf00()(2()2)()11mmmnNmnmBfTfnmnm()Bf11NSF0z00(sin(2))zzTTzFTSzttSF0zzTSzzf012203102()12()2()1smsmNmnffmndffmBffdmnkTkmnfm2124fCkD21(1)ln(12)2effavgRLPkk for the shortest focal length. In a DF-scan setup this is not so direct because the signal detected by the lock-in amplifier at this same focal length is null. Knowing that for any focal length, programmed in a EFTL, the signal detected is , (13) and and in order to obtain the "normalized" DF-scan signal of Eq. (12), which is independent of the modulation parameters , the signal represented by Eq. (13) has to be divided by the , which is known in advance. To show this, in our experiment we programed the factor and 50% duty EFTL to vary its focal length using a square signal of frequency cycle, and for (see Fig. 6(left)). The voltage detected by the lock-in amplifier for the shortest focal length, when it is not being modulated, was 46.23 mV, corresponding to A = 46.23/2 mV. Division by two is because of the 50% duty cycle of the square signal. Fig. 6(right) shows the corresponding normalized DF-scan signals for both used amplitudes and for the corresponding derivative of the normalized TF-scan; they are in excellent agreement. These normalized DF-scan signals can know be fitted using Eq. (12). amplitudes corresponding to driven currents of Fig. 6. (left) Un-normalized DF-scan signals for two oscillating amplitudes S, 0.5 mA and 1.0 mA. (right) Normalized DF-scan signals after dividing by amplitude S, voltage A and 2 due to the 50% duty cycle. The corresponding Normalized TF-scan signal derivative is also shown. 4. Experimental data fitting protocol A correct experimental data fitting is crucial in order to obtain a reliable value of the parameter of interest; in this case: the two-photon absorption coefficient. Is then desirable to know the values of all the experimental parameters with the highest precision possible in order to use only the parameter of interest as the fitting variable, especially if the technique requires the knowledge of a great number of parameters (for our case 10 experimental parameters have to be known). But in occasions this is not possible, and the experimental parameters are only known with a considerable uncertainty. As a first approach, one can use only the central values of the experimental parameters, ignoring the uncertainties, but this must probably will end in an inaccurate fitting and thus a wrong value of the parameter of interest (see for example Fig. 7(left) and set 1 in table 2). One naive approach will be to use more than one parameter as fitting variables, but because the model used does not have a unique solution, as is the case for TF-scan and DF-scan, one can end with a wrong value of the parameter of interest, although with a perfect curve fitting, as it is shown for example in Fig. 7(center). Based on the assumption that the uncertainties of the experimental parameters correspond to random fluctuations that can be model with a Gaussian distribution, we implemented a protocol with the goal to obtain an interval that contains the real value of the parameter of interest, under a statistical approach. The protocol is the following: A0ffTASfASASHz739 FS0.51.0 mA1. For each experimental parameter pick a random value from the Gaussian distribution of the possible values. 2. Fit the experimental data an obtain the corresponding value for the parameter of interest. 3. Calculate a metric to evaluate the quality of the fit. If the metric satisfies a criteria keep the value of the parameter of interest. If not, discard it. 4. Repeat steps 1-3 until a distribution with a good sample size of acceptable values is obtained. 5. With the parameters of interest that were accepted calculate the average-weighted value, using each corresponding metric value as weights. Calculate the corresponding standard error. The average-weighted value corresponds to the parameter of interest. To show the effectiveness of this approach a simulated experimental data "Real" from a sample with nonlinear TPA is presented. In table 1 the parameters used for the simulated data are presented. Table 1. Simulation: experimental parameters. (mm) 0.8 (mW) 145 (mm) 116.0 (fs) 71 (nm) 790 (MHz) 90.9 (mm) 2.0 (1/m) 1.36 R 0.1567 To retrieve we supposed that the experimental parameters are known with a 10% uncertainty. Then, three sets of experimental parameters are pick from their normal distributions: set 1 and 2 correspond to a focal distance range from 8 to 16 cm with a total of 300 sample points, and set 3 correspond to the same range but 50 sample points. Finally, the is obtained using the central values "Direct" approach, our approach data is fitted and "Protocol", and the multiple fitting-parameters "Multiple" approach. For "Multiple" approach , , , and are also use as fitting parameters. In table 2 the results are presented. Table 2. Comparison of the values, in cm/GW, retrieved from the different data-fitting techniques. Real Direct Multiple Protocol Set 1 3.4 2.2 33.9 3.3 Set 2 3.4 3.8 14.5 3.0 Error % 36 874 2 Set 3 3.4 5.3 46.4 3.5 Error % 13 325 11 Error % 53 1265 2 It is clear that the "Multiple" approach is not desirable because it most probably return a wrong value while giving an almost perfect data fitting curve, see Fig. 7(center), Fig. 8(center) and Fig. 9(center). The "Direct" approach depends directly on the experimental parameters chosen, and due to the uncertainty, this can mean that the value retrieved is close to the correct one (Fig. 8(left)) or far (Fig. 7(left) and Fig. 9(left)). Finally, our proposal, "Protocol", gives the certainty that it will always retrieve the value with the greatest possible accuracy (see Fig. 7(right), Fig. 8(right) and Fig. 9(right)). LsdDfCavgP112.6410DavgPsdFig. 7. Fitting results of the simulated data for Set 1 in table 2. (Left) "Direct" approach, (center) "Multiple" approach, (right) "Protocol" approach. Fig. 8. Fitting results of the simulated data for Set 2 in table 2. (Left) "Direct" approach, (center) "Multiple" approach, (right) "Protocol" approach. Fig. 9. Fitting results of the simulated data for Set 3 in table 2. (Left) "Direct" approach, (center) "Multiple" approach, (right) "Protocol" approach. 5. Experimental results For the experimental implementation of the TF-scan and DF-scan we used a Ti:Sapphire oscillator laser with repetition rate of 90.9 MHz, pulse width of 71 fs, and laser emission centered at 790 nm. The average power at the entrance surface of the sample was 145 mW. The beam diameter at the EFTL was D = 2.0 mm, and was measured by a laser beam profiler. The EFTL is an OPTOTUNE-1030, controlled by an OPTOTUNE lens-driver that gives a maximum current of 300 mA with a resolution of 0.1 mA, delivering a focal length resolution of 0.017 mm. The laser Gaussian beam is focused at quasi-normal incidence in order to eliminate Fabry-Perot effects and multiple reflections. We used an integrating sphere with a large area Si-photodiode (PDA 50 THORLABS) to measure the transmitted laser light. This modification to the common setup compensates any lens-divergence and eliminates signal losses due to scattering from the sample-surface roughness. The current generated by the photodiode is sent to a STANFORD RESEARCH 830 dual channel Lock-in amplifier, controlled through a GPIB interface. We have measured the TPA coefficient at 790 nm for ZnSe, CdS and CdSe. The experimental parameters for both techniques and all materials are listed in table 3, and the obtained TPA coefficients are listed in table 4. In Fig. 10 the experimental curves and curve fitting is presented for the case of CdSe. Table 3. Experimental parameters for TF-scan and DF-scan, for CdS, ZnSe and CdSe. (MHz) 90.9 (mW) (mm) 116.0 ± 0.5 (fs) (nm) 790 ± 1 (mm) 145 ± 5 71.0 ± 0.3 0.80 ± 0.01 (mm) (1/m) (mm) 2.0 ± 0.8 1.36 ± 0.01 (1/m) (mm) (1/m) 0.85 ± 0.01 0.79 ± 0.01 Table 4. Comparison of values, in cm/GW at 790 nm, for ZnSe, CdS and CdSe. DF-scan TF-scan Krauss [13] at 780 nm. ZnSe 5.1 3.2 3.5 Relative error % 23 16 >35 CdS 2.4 1.5 6.4* Relative error % 22 13 >35 CdSe 4.6 1.8 Relative error % 12 15 From table 4 it is evident that there exists a discrepancy between TF-scan and DF-scan results, in particular, DF-scan always gives a bigger value. This discrepancy will be analyzed and explained in the fallowing subsection. For the value reported by Krauss et al. [13] for ZnSe, and from a statistical point of view, there is a probability of 82% and 35% that the difference is due to a random fluctuation with respect to TF-scan and DF-scan, respectively. For the case of CdS the probabilities are 3% and 8%, respectevely. A random deviation of this magnitude in the values is not consider rare. For CdSe we were not able to find a value for wavelengths close to 790 nm. Fig. 10. Fitting result for CdSe. (Left) TF-scan, (right) DF-scan. sdDfCavgPZnSeLZnSeZnSeR4.7720.1820.005CdSLCdSCdSRCdSeLCdSe112.64100.1570.00536937CdSeR0.1850.005To compare our results with the values that have been reported, in a broader way, for the three materials, we used the expression derived by Wherrett [14] for TPA, where is the energy of the bandgap, c is the speed of light in vacuum, and h is the Planck's constant. In particular, the ratio between the TPA at 790 nm with respect to the TPA value for the other wavelengths is given by , (14) In Fig. 11 the ratio is plot for the three materials. Except for the case of CdSe, there is a probability of 5% or more that the differences are due to random fluctuations. (15) Fig. 11.Wherrett ratio. The values for the other wavelengths are taken from Krauss et al. [13] and V. Stryland et al. [13]. Difference between TF-scan and DF-scan results We believe the discrepancy between the values obtained with DF-scan and TF-scan is due to fitting robustness directly related to curve shape. In our fitting criteria the metric minimizes the value of the sum of the distance between the calculated and experimental peaks of the curves. The existence of two peaks in DF-scan signals reduce the spectrum of possible fitting values, making the process more robust and accurate than with TF-scan signals. Then, the same result must be obtained for both, the derivative of TF-scan signal and the DF-scan signal. To validate this idea, first we perform a simulation with the values of table 1, and secondly we perform the fitting for the derivative of the TF-scan signal of CdSe and compare it with the results of table 4. Results are presented in table 5 and Fig. 12, showing, without doubt, that fitting the derivative of the signal of TF-scan or the signal of DF-scan outcomes a more accurate value. Table 5. Comparison of the values, in cm/GW, retrieved from the simulated data of table 1. TF-scan DF-scan TF-scan derivative Simulated 2.6 3.8 3.6 Error % 24 12 6 3/25(2/()1)~(2/())gghcEhcEgE790,r790797/23/27900,22()()gghcErhcE3.4Fig. 11. Fitting curves of table 5 simulated-experimental data results. (Left) TF-scan, (right) DF- scan and TF-scan derivative. 6. Conclusions DF-scan is a modification to the F-scan technique where the scanning is done over the rate of change of the transmission signal with respect of the focal distance of the EFTL, reducing drastically the sensibility to laser fluctuations, increasing the available laser power and simplifying the optical setup by eliminating the need of a chopper to modulate the signal. For the curve fitting step, where the experimental signal is fitted to an analytical model in order to obtain the TPA coefficient, a new protocol is proposed in order to secure the correct determination of the TPA parameter. The effectiveness of the proposal has been validated with respect to other curve fitting procedures. Finally, it was shown that it is more reliable to fit the derivatives of the experimental signals than the signal itself, either of the DF-scan signal or the derivative of the TF-scan signal. Acknowlegments E. Rueda thanks Universidad de Antioquia for financial support. J. Serna acknowledges the support from Universidad Pontificia Bolivariana. H. Garcia and A. Hamad thanks Southern Illinois University, Edwardsville, for financial support.
1906.11512	1	1906	2019-06-27T09:11:23	The Essential Work of Fracture Parameters for 3D printed polymer sheets	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	Additive manufacturing is becoming increasingly popular in academia and industry. Accordingly, there has been a growing interest in characterizing 3D printed samples to determine their structural integrity behaviour. We employ the Essential Work of Fracture (EWF) to investigate the mechanical response of polymer sheets obtained through additive manufacturing. Our goal is twofold; first, we aim at gaining insight into the role of fibre reinforcement on the fracture resistance of additively manufactured polymer sheets. Deeply double-edge notched tensile (DDEN-T) tests are conducted on four different polymers: Onyx, a crystalline, nylon-reinforced polymer, and three standard polymers used in additive manufacturing - PLA, PP and ABS. Results show that fibre-reinforcement translates into a notable increase in fracture resistance, with the fracture energy of Onyx being an order of magnitude higher than that reported for non-reinforced polymers. On the other hand, we propose the use of a miniature test specimen, the deeply double-edge notched small punch specimens (DDEN-SP), to characterize the mechanical response using a limited amount of material. The results obtained exhibit good alignment with the DDEN-T data, suggesting the suitability of the DDEN-SP test for measuring fracture properties of additively manufactured polymers in a cost-effective manner.	physics.app-ph	physics	The Essential Work of Fracture Parameters for 3D printed polymer sheets I.I. Cuesta (1), E. Martinez-Pañeda (2), A. Díaz (1), J.M. Alegre (1) (1) Structural Integrity Group, Universidad de Burgos, Avda. Cantabria s/n, 09006 Burgos. SPAIN (2) University of Cambridge, Department of Engineering, Trumpington Street, Cambridge CB2 1PZ, UNITED KINGDOM Telephone: +34 947 258922; e-mail: [email protected] Abstract. Additive manufacturing is becoming increasingly popular in academia and industry. Accordingly, there has been a growing interest in characterizing 3D printed samples to determine their structural integrity behaviour. We employ the Essential Work of Fracture (EWF) to investigate the mechanical response of polymer sheets obtained through additive manufacturing. Our goal is twofold; first, we aim at gaining insight into the role of fibre reinforcement on the fracture resistance of additively manufactured polymer sheets. Deeply double-edge notched tensile (DDEN-T) tests are conducted on four different polymers: Onyx, a crystalline, nylon-reinforced polymer, and three standard polymers used in additive manufacturing -- PLA, PP and ABS. Results show that fibre- reinforcement translates into a notable increase in fracture resistance, with the fracture energy of Onyx being an order of magnitude higher than that reported for non-reinforced polymers. On the other hand, we propose the use of a miniature test specimen, the deeply double-edge notched small punch specimens (DDEN-SP), to characterize the mechanical response using a limited amount of material. The results obtained exhibit good alignment with the DDEN-T data, suggesting the suitability of the DDEN-SP test for measuring fracture properties of additively manufactured polymers in a cost-effective manner. Keywords: Essential work of fracture; Deeply double-edge notched tensile specimen; Small punch test; Fused deposition modelling; 3D printed polymer sheet 1 1. Introduction Additive manufacturing is an emerging technology that is becoming an alternative method for the manufacture of components in a wide range of industries. One of the main advantages of additive manufacturing is the reduced time elapsed from the conception of the component to its final manufacture, as it does not require the design and production of special tools through other production processes. The freedom allowed in the design stage is maximal, to the extent that development engineers can create geometries that cannot be obtained by other methods in a cost- effective manner. Consequently, one of the advantages of additive manufacturing is the high profitability in the production of short series or prototypes, especially when dealing with complex geometries. Numerous 3D printing technologies have been proposed to date, each of them with their advantages and disadvantages. Five techniques appear to enjoy greater popularity: fused deposition modelling (FDM), laser deposition modelling (LDM), selective laser sintering (SLS), stereolithography (SLA) and multi-jet printing (MJP). Due to its low upfront cost, fused deposition modelling (FDM) is one of the techniques with greater future prospects. This technology is based on heating a polymer above its glass transition temperature, and depositing it layer by layer with a nozzle. The main drawbacks of FDM are the notable surface roughness levels and, common to other additive manufacturing techniques, the poorer mechanical performance of the samples (relative to traditional manufacturing methods). Not surprisingly, a vast amount of literature has been devoted to the characterization of the mechanical properties of specimens manufactured by FDM. Most works aim at assessing the role of printing process parameters on the mechanical properties (see, [1-10], and references therein) but there are also studies related to fracture and fatigue properties [11-13], and high temperature performance [14-15]. The present work has a twofold objective. First, we aim at gaining quantitative insight into the role of fibre-reinforcement on the enhancement of the fracture resistance of additively manufactured polymer sheets. To this end, we make use of the Essential Work of Fracture (EWF), see Section 2.2, to obtain the fracture and plastic properties of different types of polymers. Specifically, we take as benchmark material a nylon-based crystalline polymer reinforced with short carbon fibres named Onyx. The mechanical and fracture properties of Onyx are compared to those obtained for other typical 3D printing polymers, both crystalline and amorphous. These are polylactic acid (PLA), polypropylene (PP), and acrylonitrile butadiene styrene (ABS). The second objective of the paper aims at assessing the suitability of the so-called Small Punch Test (SPT) to characterize the 2 mechanical behaviour of additively manufactured polymers. The SPT has proven to be a reliable experiment for characterizing the mechanical and fracture properties of metallic materials (see, e.g., [16-17]), and its use has been recently extended to polymer testing [18]. The test employs very small specimens, making it very cost-effective and particularly suitable for situations where a limited amount of material is available. We investigate the viability of the method by comparing with the results obtained from the standardised deeply double-edge notched tensile (DDEN-T) experiment. The aim is to elucidate the role of two potential obstacles. The first one involves the specimen-to- specimen variability, an effect that is already present in additively manufactured samples (more defects and heterogeneities) and that can be magnified further with the use of miniature specimens. The second issue in extrapolating to standardised experiments lies in the different stress triaxiality conditions and loading configuration, which can bring changes in the damage mechanisms at play. We aim at gaining insight into these effects, and discuss their influence on the viability of the approach proposed. 2. Methodology We subsequently proceed to describe the materials employed in the study (Section 2.1), the Essential Work of Fracture method employed (Section 2.2) and the different experimental tests adopted (Section 2.3). 2.1 Materials and analysis of porosity The influence of fibre-reinforcement will be assessed by conducting experiments on a chopped carbon fibre reinforced nylon with commercial name Onyx. With a flexural strength of 81 MPa, this material is roughly 1.4 times stronger and stiffer than ABS, and can be reinforced with any continuous fibre. Onyx is supplied as a continuous filament ready to be printed using FDM. Figure 1 shows the aspect of the short fibres embedded in the polymer matrix, having an approximate length of 61.7 microns and a diameter of approximately 8.2 microns. The fibres provide an additional stiffening, which makes Onyx 3.5 stiffer than regular nylon. Onyx has a density of 1.2 g/𝑐𝑚3, a Young's modulus of 1.4 GPa, and an elongation at failure of 58%. 3 Figure 1. Aspect of the short fibres embedded in the nylon matrix: (a) general view, and (b) detailed view. 4 We use computerized axial tomography to determine the degree of initial porosity of the FDM 3D printed samples. The details of the fracture process zone in a deeply double-edge notched tensile (DDEN-T) specimen are shown in Figure 2. The deposition of the material during the printing process can be clearly observed. As expected, the different passes of the extruder leave small empty gaps, reducing the density of the final specimen. Figure 2. Deeply double edge notched tensile specimen. The outer process dissipation zone (OPDZ) and the inner fracture process zone (IFPZ) are marked. We repeat the same procedure for the experimental setup proposed to characterize additively manufactured polymers, the deeply double-edge notched small punch (DDEN-SP) test. As described in Section 2.3, the DDEN-SP experiment is an extension of the standard Small Punch Test (SPT) for metals, with two deep side notches and a shape that resembles the standardised DDEN-T specimen. The computerized axial tomography image of the DDENT-SP is shown in Figure 3. The pattern of deposition of the material (45º in two directions) and the final porosity obtained are similar to those found for conventional test specimens (DDEN-T). Accordingly, the porosity levels are expected to be similar in both DDEN-T and DDEN-SP specimens. This is confirmed by detailed 5 OPDZIFPZWLW=30mmporosity measurements. From 10 porosity measurements, a porosity mean value of 2.2 ± 0.1% has been estimated, wherein the value of 100% corresponds to completely dense material. Figure 3. Small punch test device and DDEN-SP specimen. The performance of this nylon-matrix carbon fibre reinforced polymer is compared to three polymeric materials that are commonly used in FDM additive manufacturing: polylactic acid (PLA), polypropylene (PP), and acrylonitrile butadiene styrene (ABS). PLA and PP are crystalline while ABS is amorphous. PLA is a thermoplastic with a density of 1.25 g/𝑐𝑚3, Young's modulus of 3.5 GPa, and elongation at failure of 6%. On the other hand, ABS exhibits a greater variability, with a density that goes between 1.03 and 1.38 g/𝑐𝑚3, a Young's modulus ranging between 1.7 to 2.8 GPa, and an elongation at failure between 3% and 75%. And PP has a density of approximately 0.9 g/𝑐𝑚3, a Young's modulus in the range of 1.1 to 1.6 GPa and an elongation at failure that can go from 100% to 600%. All the materials considered in this study were produced with the same technique. 2.2 Essential Work of Fracture Broberg [19,20] proposed, for the first time, the Essential Work of Fracture (EWF) method to characterize metals and alloys. This technique was later extended to the characterization of polymers by Mai and Cotterell [21,22]. By using DDEN-T specimens, the EWF has been successfully used to quantitatively measure fracture properties in thin polymer sheets; see, e.g., [23,24] and references therein. The EWF method is particularly suited to characterize the fracture behaviour of polymer sheets with thicknesses lower than 2 mm. 6 pddDrpunchspecimenlowerdieupperdiecrackplaneligament2dDr+×()10x3x0.5mmThe foundation of the EWF method is the division of the energy consumed during the ductile fracture of pre-cracked specimens ( ) into two terms: the essential work ( ) and the plastic work ( ). The former, , represents the energy required to create the new fracture surfaces, which can be related to the inner fracture process zone (IFPZ). The latter, , is non-essential work, as it comprises the energy employed in general plastic deformation and the dissipation process, depending on the geometry of the deformed region. This plastic work is thus related to the outer process dissipation zone (OPDZ). Both terms are a function of the specimen ligament as expressed in equation (1). Hence, they are usually divided by the ligament section ( ) to use the specific work terms, ( , and ), as shown in equation (2), (1) (2) where is the specimen thickness, is the ligament length and is the shape factor corresponding to the geometry of the outer plastic dissipation zone [25]. The term can be seen as roughly equivalent to the fracture toughness. For a correct use of the EWF method, self-similarity between load-displacement curves must be achieved [25,26]. For polymer films, the advantage of the EWF method using DDEN-T specimens compared to the J-Integral procedure is, in many cases, its experimental simplicity. An inconvenience arises when there is not enough material available to extract the conventional DDEN-T specimens. We shall explore the viability of extending the success of the Small Punch Test (SPT) to the analysis of additively manufactured polymers. In addition, the EWF and conventional DDEN-T samples will be used to quantify the improvement in fracture properties gained by the use of fibre reinforcement. 2.3 Experimental tests The standard testing example to measure the EWF parameters in polymers is the deeply double- edge notched tensile (DDEN-T) specimen shown in Figure 2. The test is conducted in agreement with the usual procedures (see, e.g., [26] for details) and no special measures are taken. The 7 fWeWpWeWpWLtfwewpw2fepepWWWwLtwLtfepwwwLtLewexperiments are performed using a MTS Criterion 43 electromechanical Universal Test System machine, with 10 kN of load capacity. All samples are printed with a width (𝑊) of 30 mm. We propose, as an alternative to the DDEN-T specimen, the use of the deeply double-edge notched small punch (DDEN-SP) samples -- see Figure 3. The ability of the Small Punch Test (SPT) in measuring the EWF parameters is examined by modifying the standard SPT specimen so as to mimic the conditions of the DDEN-T experiment [27]. The main enhancement is the introduction of two side notches. Although the small punch test has been used in numerous studies with the objective of mechanically characterizing a material sample of small dimensions [28-30], few of these studies have considered pre-notched SPT specimens [31,32]. The tests are conducted in the configuration outlined in the left side of Figure 3, involving a high-strength punch of diameter and a lower die with a hole with diameter and fillet radius . Unlike the DDEN-T samples, the DDEN-SP specimens are manufactured with a width of 3 mm. In both DDEN-T and DDEN-SP cases, the samples were additively manufactured directly on their final form. A thickness of 0.5 mm was achieved directly from the FDM manufacturing for all the DDEN-SP specimens, avoiding the need for any polishing or machining process. The remainder details of the testing configuration follow those described in the CEN code of practice for small punch testing of metallic materials [33]. It is noted that reproducibility of the DDEN-SP tests requires a good degree of precision in the FDM process. Common to both DDEN-T and DDEN-SP specimens, the notches are sharpened by means of a razor blade. As elaborated in Section 3.1, different notch lengths are considered. Given that the specimen width is reduced by different notch sizes, the length of the ligament must vary in such a way that plane stress conditions are still verified. Thus, the range employed in the EWF method is limited by a maximum ligament of and a minimum of [25]. All DDEN-T and DDEN-SP tests were performed at room temperature with a test rate of 0.5 mm/min. 3. Results and discussion We shall first address the results related to the analysis of the influence of the fibre reinforcement on the EWF parameters of additively manufactured polymers (Section 3.1). Afterwards, we assess the capabilities of the DDEN-SP testing procedure in evaluating the mechanical and fracture properties of polymeric materials obtained by additive manufacturing (Section 3.2). 8 2.5pdmm4dDmm0.5rmm3Lt/3LW3.1 Analysis of the fibre-reinforcement effect Consider first the standardised DDEN-T experiment. We compare the fracture performance of Onyx with the non-reinforced materials: ABS, PP and PLA. Figure 4 shows the results obtained for different notch lengths. As evident from Figure 4, the self-similarity condition is fulfilled; in other words, a similar shape of the force-displacement curve is measured for the different notch lengths. Regarding the magnitude of the maximum load, Onyx and PLA exhibit similar values, which are roughly 1.5 times higher than those that are attained with PP and PLA. On the other hand, the displacement at final failure is of the same order for Onyx, ABS and PLA, but is one order of magnitude higher for PP. The higher ductility of PP is significant and consistent with its higher elongation at break (see Section 2.1). We follow Ref. [34] and quantify the ductility by defining a ductility level 𝐷𝐿 as a function of the displacement at rupture 𝑑𝑟 and the ligament length 𝐿 as (3) The ductility level is used to characterize the different fracture behaviours observed in polymer fracture. Thus, 𝐷𝐿 < 0.1 indicates brittle fracture, 0.1 < 𝐷𝐿 < 0.15 is the regime of ductile instability, the range 0.15 < 𝐷𝐿 < 1 is known as post-yielding, blunting is characteristic of 1 < 𝐷𝐿 < 1.5, and necking is the main dominant failure mechanism when 𝐷𝐿 > 1.5. The value of 𝐷𝐿 is obtained for each test, and found to be within 0.1-0.15 (i.e., ductile instability) for ABS, PLA and Onyx. However, in the case of PP, the ductility level was found to lie between 1 and 1.5, indicative of failure accompanied by extensive plastic deformation at the crack tip, without steady crack propagation. 9 /LrDdLFigure 4. Load-displacement curves obtained from the DDEN-T specimens for, respectively, ABS, Onyx, PLA and PP. We proceed to conduct the EWF analysis for each material. Figure 5 shows the results of the specific work of fracture for the four materials analysed. The figure includes the linear regression of the data, as well as the 95% confidence and prediction bands, according to equation (2). The values obtained for 𝛽𝑤𝑝, 𝑤𝑒 and 𝑅2 are listed in Table 1. 10 Displacement (mm)0.00.20.40.60.8Load (N)020406080100L=3.51mmL=4.54mmMaterial: ABSL=5.51mmDisplacement (mm)0.00.20.40.60.81.0Load (N)050100150200250L=7.93mmL=3.05mmL=6.85mmMaterial: ONYXDisplacement (mm)0.00.20.40.60.81.0Load (N)050100150200250L=5.15mmMaterial: PLAL=7.47mmL=10.55mmDisplacement (mm)024681012Load (N)020406080100L=9.04mmL=6.72mmL=4.54mmL=2.05mmMaterial: PPFigure 5. Specific work of fracture obtained from the DDEN-T specimens for, respectively, ABS, Onyx, PLA and PP. The linear regression of the data, along with the 95% confidence and prediction bands are also shown. First, note that, consistent with the ductility analysis above, the plastic term 𝛽𝑤𝑝 is substantially larger for PP than for the other materials. Very little differences between materials are observed in the term 𝑅2, which is in all cases close to 1. The degree of reproducibility is therefore satisfactory. More interestingly, the term 𝑤𝑒 , which can be assimilated as the initiation toughness, shows important differences between the fibre-reinforced material, Onyx, and the rest. Specifically, the toughness of Onyx is 24.14 kJ/ m2, about an order of magnitude higher than ABS. Thus, the present analysis not only provides with the estimation of the mechanical and fracture properties of Onyx but also quantifies the fracture resistance enhancement provided by fibre-reinforcement, relative to other widely used additively manufactured polymers. 11 L (mm)024681012wf (kJ/m2)01020304050wf-L exp. data DDEN-TLinear regression95% Confidence Band 95% Prediction Band ABSL (mm)024681012wf (kJ/m2)01020304050wf-L exp. data DDEN-TLinear regression95% Confidence Band 95% Prediction Band ONYXL (mm)024681012wf (kJ/m2)01020304050wf-L exp. data DDEN-TLinear regression95% Confidence Band 95% Prediction Band PLAL (mm)024681012wf (kJ/m2)020406080100120140wf-L exp. data DDEN-TLinera regression95% Confidence Band 95% Prediction Band PP Table 1. Essential Work of Fracture Parameters. Material [kJ/m3] [kJ/m2] ABS ONYX PLA PP 1.49 1.14 1.96 14.71 2.66 24.14 7.84 9.23 0.81 0.87 0.87 0.91 3.2 Assessment of the suitability of DDEN-SP testing Let us address now the suitability of the miniature DDEN-SP experiment for the characterization of additively manufactured polymer sheets. This proof-of-concept exercise will be conducted with the fibre-reinforced Onyx material. The force versus displacement curves obtained with different notch lengths are shown in Figure 6. It can be clearly seen that the similarity condition between curves for different ligament sizes is fulfilled, as in the standardised DDEN-T experiments. In agreement with expectations, and with the DDEN-T results, the maximum load level increases with the ligament size. Comparing the shape of the force-displacement curves for small punch specimens to those for DDEN-T, a different evolution is found. This finding is attributed to the fracture process at the ligament, as the DDEN-SP specimens do not have the same behaviour as the DDEN-T specimens when the ligament length approaches zero. In a DDEN-T sample, if 𝐿 → 0, the load-displacement curve approaches zero (𝑊𝑓 → 0), because the specimen is separated into two halves, and the force during the test is zero. However, in a DDEN-SP specimen, if 𝐿 → 0, the load-displacement curve does not approach zero, because the punch must plastically deform the two halves of the sample to pass through them to complete the test. We make use of the ductility index defined in Equation (3) to assess the role of the stress triaxiality and loading conditions inherent to the DDEN-SP experiments. An average ductility level 𝐷 can be estimated from the results shown in Figure 6, and compared with the one obtained from the Onyx measurements with DDEN-T samples. As listed in Table 2, the ductility level attained in DDEN-SP is more than four times higher than that attained with DDEN-T. According to the classification outlined in above, the DDEN-SP specimens fail in the post-yielding regime, while the standardised DDEN-T samples lie at the border between the ductile instability and the post-yielding regimes. Thus, differences exist in the ductility levels, which do not compromise the use of the EWF methodology, but will hinder a quantitative correlation between the values of plastic work measured in the two tests, as discussed below. 12 ·pwew2RTable 2. Average ductility level in the DDEN-T and DDEN-SP tests as measured for Onyx. Onyx DDEN-T DDEN-SP Ductility level, 𝐷 0.14 0.65 Figure 6. Load-displacement curves obtained from DDEN-SP specimens for Onyx. Figure 7 shows the final features of the DDEN-SP broken specimens, and the zone corresponding to the fracture process can be identified at a glance. A fracture behaviour similar to that of the DDEN-T specimens was found (crack propagation in mode I), and thus, the upper and lower limits of the values can be established, as well as the essential and plastic work. Thus, the DDEN- SP experiment appears to be suited to extract the EWF parameters, enabling the assessment of the mechanical behaviour of Onyx. A comparison with the results from the standardised DDEN-T tests is shown below. 13 fwLDisplacement (mm)0.00.20.40.60.81.01.2Load (N)020406080L=2.2mmL=1.31mmL=0.66mmMaterial: ONYX Figure 7. Detail images of the fracture process in deeply double edge notched small punch specimens for Onyx. Figure 8 shows the specific work of fracture, 𝑤𝑓, obtained from both DDEN-T and DDEN-SP experiments on Onyx, as a function of the ligament length, 𝐿. As with Figure 5, the 𝑤𝑓 versus 𝐿 results are accompanied by the linear regression of the data, as well as the 95% confidence and prediction bands. In addition, a table is included with the values inferred for the plastic work 𝛽𝑤𝑝, the initiation toughness 𝑤𝑒 and the parameter 𝑅 . We note in passing that, for the DDEN-SP specimens, it is not possible to apply the conventional criteria to establish the upper ( ) and lower ( ) limits for the values; the DDEN-SP specimens used have a width , so the limits overlap. To overcome this problem, we choose to make limits consistent with the miniature specimen dimensions. Thus, the upper limit takes a value of , and the lower limit takes a limit of . 14 /3LW3LtfwL3Wmm2/3LWLtFigure 8. Specific work of fracture, 𝑤𝑓, versus ligament length 𝐿. Comparison of the EWF results obtained for DDEN-T and DDEN-SP experiments on a fibre-reinforced polymer (Onyx). Regarding the analysis of the results. First, note that the specific work of fracture lines up very well in both cases. Also, note that a larger plastic work is predicted by the DDEN-SP experiment. This is intrinsically related to the test configuration, which exhibits a mainly biaxial stress state that favours ductility and plastic deformation. In addition, the punch also induces plastic deformation in the contact region. More importantly, Figure 8 reveals a very similar value of the fracture toughness, as given by 𝑤𝑒. This can be readily seen graphically, as both fitting lines intersect at the same point on the vertical axis. Thus, an initiation toughness of 24.67 kJ/m2 is attained with the standardised DDEN-T experiment, while an initiation toughness of 26.73 kJ/m2 is predicted by the proposed DDEN-SP test -- less than 10% difference. Thus, the results suggest that the DDEN-SP experiment, in combination with the EWF method, is suitable to characterize the fracture properties of a fibre- reinforced additively manufactured polymer, with results being quantitatively comparable to those of standard tests. On the other hand, the DDEN-SP test overpredicts the plastic work measured in the DDEN-T experiment and can, therefore, only be used in a qualitative manner. Regarding the 𝑅2 15 L (mm)024681012wf (kJ/m2)020406080100wf-L exp. data DDEN-Twf-L exp. data DDEN-SPLinear regression95% Confidence Band 95% Prediction Band we [kJ/m2]R2·wp [kJ/m3]1.1623.4324.6726.730.870.89DDEN-TDDEN-SPSpecimenterm, almost and identical value is obtained for DDEN-SP and DDEN-T experiments. In both cases, the value is close to 1, emphasizing the good reproducibility of the DDEN-SP experiments on Onyx. Slightly higher values are typically obtained, in both DDEN-SP and DDEN-T tests, for conventionally manufactured samples. This is in agreement with expectations, as additive manufacturing introduces more defects into the material than thermoforming and other conventional techniques. However, this appears not to be aggravated by the use of miniature specimens in the case of the fibre-reinforced polymer under consideration. 4. Conclusions We use the Essential Work of Fracture (EWF) method to characterize the mechanical and fracture properties of polymeric materials that have been obtained by fused deposition modelling (FDM)- based additive manufacturing. On the one hand, we investigate the role of fibre-reinforcement on enhancing the structural integrity behaviour of additively manufactured polymers. To this end, we work with four different materials by combining standard deeply double-edge notched tensile (DDEN-T) tests and the EWF methodology. Thus, we compare the EWF parameters obtained for Onyx, a nylon-matrix, carbon-fibre reinforced crystalline polymer, with the results obtained for three well-characterized additively manufactured polymers without fibre reinforcement: polylactic acid (PLA), polypropylene (PP), and acrylonitrile butadiene styrene (ABS). On the other hand, we assess the suitability of the Small Punch Test (SPT), a mechanical test designed for testing miniature metallic specimens, to characterize the mechanical behaviour of fibre-reinforced, additively manufactured polymers. Deeply double-edge notched small punch (DDEN-SP) tests on Onyx are conducted, and compared with the results obtained from DDEN-T experiments. Our main findings are: ▪ 3D printed samples of Onyx, a new fibre-reinforced polymer, exhibit a notable enhancement in fracture toughness relative to non-reinforced polymers used widely in additive manufacturing. This finding suggests that Onyx, and other fibre-reinforced polymers, are promising candidates for additively manufactured components that demand a higher fracture resistance. ▪ DDEN-SP experiments on additively manufactured samples reveal their suitability to employ the EWF methodology. The essential requirements for the application of the method, self-similar load- displacement curves and crack propagation in mode I, are met. Additionally, upper and lower limits for the ligament length of miniature specimens have been established. These results suggest that the 16 DDEN-SP test has the potential to enable a cost-effective assessment of the structural integrity response of polymer-based, additively manufactured components. ▪ The use of the DDEN-SP test on Onyx reveals that the EWF-based fracture toughness measurements obtained can be directly compared to those obtained with standard DDEN-T. This finding, to be examined with other polymer types, suggests that DDEN-SP fracture measurements can be directly correlated with standardised measurements, enabling a quantitative assessment. 5. Acknowledgements The authors wish to thank the funding received from the Ministry of Education of the Regional Government of Castile and Leon, which started in 2018 under the support of the Recognized Research Groups of the Public Universities of Castile and Leon (project: BU033G18). E. Martínez- Pañeda additionally acknowledges financial support from Wolfson College Cambridge through their Junior Research Fellowship programme. I.I. Cuesta wishes to thank the Department of Engineering of Cambridge University for providing hospitality during his research stay. References [1] Z. Quan et al. Printing direction dependence of mechanical behavior of additively manufactured 3D preforms and composites. Composite Structures 184 (2018) 917-923. [2] G. Zhao et al. Mechanical properties of Sn63Pb37 components by fused coating technology. Additive Manufacturing 22 (2018) 388 -- 393. [3] H. Al Abadi et al. Elastic properties of 3D printed fibre-reinforced structures. 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1812.06117	3	1812	2019-09-10T20:18:40	Mid-IR non-volatile silicon photonic switches using nanoscale Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} embedded in SOI waveguide	[ "physics.app-ph", "physics.optics" ]	We propose and numerically analyze the hybrid Si-Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} strip waveguide switches for Mid-IR wavelength of 2.1 $\mu$m. The switches investigated are one input-one output (on-off) type and one input-two outputs (directional coupler) type. The reversible transition between the switch states is achieved by inducing the phase transition from crystalline to amorphous and vice-versa by application of voltage pulses. The approach of embedding the nanoscale active material Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} within the Si waveguide is taken to enhance the interaction of light with the active region of the switches. The dimensions of the active regions of the switches are optimized to achieve low insertion loss, low switching energy, and high extinction ratio. In case of one input-one output switch, an extinction ratio of 33.79 dB along with an extremely low insertion loss of 0.52 dB is achieved using optimum Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} length of only 0.92 $\mu$m. For one input-two outputs switch, an extinction ratio of 10.33 dB and 5.23 dB is obtained in cross and bar state respectively using an active length of 52 $\mu$m. These values of extinction ratio, which are otherwise 18.59 dB and 8.33 dB respectively, are due to the necessity of doping the Si beneath the Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} to facilitate the electrical conduction needed for Joule heating. A suitable gap of 100 nm is kept between the active and passive arm of the directional coupler switch. The electro-thermal co-simulations confirm that phase change occurs in whole of the Ge\textsubscript{2}Sb\textsubscript{2}Te\textsubscript{5} region in both types of switches.	physics.app-ph	physics	MID-IR NON-VOLATILE SILICON PHOTONIC SWITCHES USING NANOSCALE GE2SB2TE5 EMBEDDED IN SOI WAVEGUIDE A PREPRINT Nadir Ali Department of Physics Rajesh Kumar Department of Physics Indian Institute of Technology Roorkee Indian Institute of Technology Roorkee Roorkee, India 247667 [email protected] Roorkee, India 247667 [email protected] September 12, 2019 ABSTRACT We propose and numerically analyze the hybrid Si-Ge2Sb2Te5 strip waveguide switches for Mid-IR wavelength of 2.1 µm. The switches investigated are one input-one output (on-off) type and one input-two outputs (directional coupler) type. The reversible transition between the switch states is achieved by inducing the phase transition from crystalline to amorphous and vice-versa by applica- tion of voltage pulses. The approach of embedding the nanoscale active material Ge2Sb2Te5 within the Si waveguide is taken to enhance the interaction of light with the active region of the switches. The dimensions of the active regions of the switches are optimized to achieve low insertion loss, low switching energy and high extinction ratio. In case of one input-one output switch, an extinction ratio of 33.79 dB along with an extremely low insertion loss of 0.52 dB is achieved using optimum Ge2Sb2Te5 length of only 0.92 µm. For one input-two outputs switch, an extinction ratio of 10.33 dB and 5.23 dB is obtained in cross and bar state respectively using an active length of 52 µm. These values of extinction ratio, which are otherwise 18.59 dB and 8.33 dB respectively, are due to the necessity of doping the Si beneath the Ge2Sb2Te5 to facilitate the electrical conduction needed for Joule heating. A suitable gap of 100 nm is kept between the active and passive arm of the directional coupler switch. The electro-thermal co-simulations confirm that phase change occurs in whole of the Ge2Sb2Te5 region in both types of switches. Keywords Optical switching devices · electro-optical switches · directional coupler switches · integrated optics devices · phase change materials 1 Introduction The internet data traffic over the fiber optic network has been increasing at an exponential rate and rapidly approaching the projected ultimate data transmission capacity limits, raising concerns over a future capacity crunch. Thus, a new non-conventional physical technology will soon be indispensable [1]. A viable solution is to open a new optical communication wavelengths window around 2 µm region [2]. The main motivation behind this is to exploit the recently developed hollow core photonic band gap fiber (HC-PBGF) and Thulium doped fiber amplifier. The HC-PBGFs guides light in the air core, which minimize the Rayleigh scattering loss by having high wavelength of operation as Rayleigh scattering has λ−4 dependence, and in fact for such fibers minimum loss window falls around 2 µm region. In addition, HC-PBGFs exhibit low nonlinearity and low latency as compared to the conventional fibers [3, 4]. Combining HC-PBGF with Thulium doped amplifier, which has exceptionally high band width in this region [5], projects an attractive future for the optical communication around 2 µm wavelength. However, a fully functional next-generation photonic system will require a full range of suitable components with higher integration, miniaturization and complex functionalities. The advantages of silicon (Si) over other materials for conventional optical communication wavelengths have been studied and stated in the literature, and this can be further extended to the 2 µm region. Si is transparent for the wavelength range of 1-7 µm [6], and Si A PREPRINT - SEPTEMBER 12, 2019 (a) (b) ITO a-GST (c) 50 nm hGST c-GST 1 0.8 0.6 0.4 0.2 0 w ITO GST SiO2 Figure 1: One input-one output switch design using fully etched Si waveguide. (a) Schematic of hybrid Si-GST 1 × 1 waveguide switch. (b) Cross-section of the active region of switch; phase change material GST substituted in fully etched silicon waveguide. (c) Mode profile in the ON (a-GST) and the OFF (c-GST) state of switch. photonic components can be fabricated using mature complementary metal oxide semiconductor (CMOS) technology employed in manufacturing of the electronic components [7]. However, Si active photonic devices such as switches and modulators are bulky and consumes large power because of the modest tunability of Si and requirement of a continuous power source to maintain the bias [8]. Therefore, non-volatile switches that consume lesser power and have ultra-compact footprint are required to unleash the full potential of optical transmission around 2 µm wavelength. Recently, a well-known phase change material Ge2Sb2Te5 (GST) has been utilized as an active material in non- volatile on-chip active devices on different photonic platforms [9]. The active operation in these devices is enabled because GST exhibits good phase change behavior among its amorphous (a-GST) and crystalline (c-GST) phases. The transition between two phases of GST is rapid, repeatable and results in a huge difference in optical and electronic properties. Because of high refractive index difference between the two phases of GST, active devices exhibit high (a) (b) h a-GST (c) 50 nm hGST hSi c-GST 1 0.8 0.6 0.4 0.2 0 w ITO GST Si SiO2 Figure 2: One input-one output switch design using partially etched Si waveguide. (a) Schematic of hybrid Si-GST 1 × 1 waveguide switch. (b) Cross-section of active region of switch; phase change material GST substituted in partially etched silicon waveguide. (c) Mode profile in the ON (a-GST) and the OFF (c-GST) state of switch. 2 A PREPRINT - SEPTEMBER 12, 2019 (a) (b) h w Si l GST g SiO2 w Si 50 nm 20 nm 380 nm ITO GST Si Figure 3: (a) Schematic of hybrid Si-GST 1 × 2 directional coupler switch: only the coupling waveguides of directional coulper are shown. (b) Cross-section of the coupling waveguides where a 20 nm thick GST substituted in the partially etched silicon waveguide. on-off ratio and can have broad band operation with ultra-compact footprint [10]. Another interesting property of GST-based devices is the self-holding bistability i.e. no continuous power is required to maintain the device state [11]. The switching of GST from the a-GST to the c-GST and vice-versa is achieved by Joule heating GST material through the application of optical and electrical pulses [12, 13]. These transitions occurs with transition time of sub-nanoseconds [14]. Moreover, the fabrication of GST based devices is CMOS compatible. Previous studies reported chip-based GST experiments on switching and modulation for the optical communication 1.55 µm wavelength [15, 16, 17]. In most cases, the GST material was deposited on top surface of the waveguide and acts as a variable refractive index cladding. Here, we take another approach by embedding GST inside the etched silicon-on-insulator (SOI) waveguides. Such an approach improves the light-matter interaction and provide a high extinction ratio with small active volume [18]. In this article, we report switches aimed for operation at 2.1 µm wavelength, using GST embedded within the SOI waveguide. The wavelength selection is inspired from the fact that the GST has lowest attenuation coefficient kam = 0.006 at 2.1 µm wavelength around 2 µm window [19]. The GST material is embedded within the etched Si waveguide to provide high overlap between the optical mode in the waveguide and the GST. Taking into consideration both insertion loss and extinction ratio, we find the optimized value of GST dimensions. For the phase transition of GST, we consider voltage triggered phase change for switching applications. Hence, electro-thermal co-simulations are performed for the optimized structure of switches. The rest of the paper is organized as follows. In the second section, we presents the design of Si waveguide, geometries of switches, and the parameters used to analyze switches. In the third section, results obtained by perform- ing electromagnetic and thermal simulations are described. Finally, the conclusions are presented in the fourth section. 2 Designs and simulations The switches designed here are hybrid Si-GST one input-one output (1 × 1) waveguide switch and one input-two outputs (1 × 2) directional coupler switch. The Si strip waveguide is designed in SOI platform with a 400 nm height Si layer and a 2 µm thick buried silicon dioxide substrate. For the single mode operation at 2.1 µm the cross section of waveguide is 800 nm × 400 nm (width × height). The approaches taken to design hybrid Si-GST switches are described below. 2.1 1 × 1 waveguide switch In 1 × 1 waveguide switch, the output optical power through the Si waveguide is altered by changing the phase of GST (from a-GST to c-GST and vice-versa) embedded inside the Si waveguide. The optical mode is launched from the left side and output is measured from the right side of the waveguide shown in figure 1. To achieve high overlap between the optical mode and the GST, first, we fully etched the Si waveguide in the middle and embedded GST in the trench as shown in figure 1(a). The indium-tin-oxide (ITO) electrodes are used to inject voltage pulses into GST to induce GST phase transition as shown in figure 1(a). The ITO is chosen as electrode material as its deposition temperature 3 (a) 400 350 300 ) m n ( T S G h 250 200 150 IL(dB) 15 (b) 400 350 300 250 200 ) m n ( T S G h 150 13 12 10 8 6 4 2 0 A PREPRINT - SEPTEMBER 12, 2019 ER (dB) 14 12 10 8 6 4 2 -0 -3 100 50 0 0 200 400 600 lGST (nm) 800 1000 100 50 0 0 200 400 600 lGST (nm) 800 1000 Figure 4: Contour plots of (a) IL and (b) ER as a function of hGST and lGST for 1 × 1 waveguide switch with GST substituted in fully etched silicon waveguide. (a) (b) a-GST lGST=1020 nm c-GST lGST=1020 nm Figure 5: Three-dimensional simulations of the designed hybrid Si-GST 1 × 1 waveguide switch with optimized values of GST dimensions substituted in fully etched silicon waveguide for the (a) ON state (a-GST) and the (b) OFF state (c-GST). is around 300 ◦C. This temperature is CMOS compatible and ITO as electrode material can be introduced in CMOS process [20]. As figure 1(b) shows, the height of embedded GST is denoted as hGST and the length of active region as lGST (not shown in figure 1). The same figure also shows the electrode material ITO layers for top and bottom electrical contacts. Each of the ITO layer has height of 50 nm. To achieve high extinction ratio and low insertion loss, we varied GST dimensions hGST and lGST . Because of different values of GST extinction coefficient, the optical mode suffers variable attenuation in two phases. In the amorphous phase, the mode experience smaller attenuation. While light is highly absorbed when GST is in the crystalline phase because it has higher value of extinction coefficient than amorphous phase. This can be seen from the mode profile inside the active region of hybrid Si-GST waveguide switch shown in figure 1(c). Thus, the a-GST and the c-GST phases exhibits the ON and the OFF states of switch, respectively. In the second design of 1 × 1 waveguide switch, the GST is embedded in partially etched Si waveguide as shown in figure 2(a). This approach is taken to minimize the interface scattering and reflection losses between the active waveguide region and the adjacent passive waveguide regions. This approach drastically reduce insertion loss of the device. For optimization, we varied the lGST , hGST and hSi, where hSi is the height of the partially etched Si as shown in figure 2(b). Both hGST and hSi are varied in such a way that the total height of the waveguide (hGST + hSi = 400 nm) remains the same. The mode profile of switch active region for the ON and OFF states is shown in figure 2(c). For both of the switch designs, we calculated switch parameters insertion loss (IL) and extinction ratio (ER). Both IL and ER are calculated from the switch transmission data. These are defined as IL = 10log(TON ), and ER = 4 400(a) 350 300 0 50 100 IL (dB) 0.63 (b) 400 350 300 ) m n ( i S h 250 200 150 150 ) m n ( T S G h 200 250 100 50 0 0 300 350 200 600 400 lGST (nm) 800 400 1000 ) m n ( i S h 250 200 150 0.56 0.50 0.44 0.38 0.32 0.25 0.19 0.13 A PREPRINT - SEPTEMBER 12, 2019 ER (dB) 34 0 50 100 150 ) m n ( T S G h 200 250 30 26 21 17 13 9 4 0 100 50 0 0 300 350 200 600 400 lGST (nm) 800 400 1000 Figure 6: Contour plots of (a) IL and (b) ER as a function of hGST , hSi and lGST for 1 × 1 waveguide switch with GST substituted in the partially etched silicon waveguide. 10log(TON/TOF F ), where TON and TOF F denotes transmission for the amorphous and crystalline phase respectively. Based on the best value of ER and IL, we selected the dimensions for the electro-thermal simulations. 2.2 1 × 2 directional coupler switch Figure 3 depicts the parallel waveguides region of the proposed 1 × 2 directional coupler switch. For simplicity only the parallel waveguides are shown in figure 3(a). To achieve controlled coupling of optical mode from one waveguide to other, a 20 nm thick layer of GST is embedded in partially etched Si waveguide as shown in the cross section view of active waveguide region in figure 3(b). This GST thickness is selected to minimize the phase mismatch between the Si and the hybrid Si-GST waveguides. The gap between the coupling waveguides is denoted as g, and the length of the active region of the coupler is denoted as lGST . As in the previous case, the ITO electrodes are used to voltage trigger phase change of GST. We calculated the various parameters of directional coupler switch such as coupling ratio (CR) = Pcross/(Pcross+Pbar); excess loss (EL) = 10logPi/(Pcross + Pbar); and insertion losses IL, ILcross = 10log(Pi/Pcross) and ILbar = 10log(Pi/Pbar), where Pi denotes the input power, Pbar and Pcross denotes the output power for the bar and the cross state of switch, respectively. By taking into consideration the value of CR and IL, we selected the optimized value of g and performed the electro-thermal simulations of switches. All the simulations are performed using CST-Microwave Studio. The electromagnetic investigations are done using three dimensional finite integration technique with open boundary conditions. The thermal investigations are per- formed by electro-thermal co-simulations using Mphysics module of this software. For the simulations performed, we define the refractive index of GST as n + ik, where n and k are the real and imaginary refractive index of GST. The refractive indices used are 4.05 + i0.006 (a-GST) and 6.80 + i0.40 (c-GST) at 2.1 µm wavelength. The ITO, SiO2, Si and N-Si refractive indices are set to 1.84 + i0.019, 1.45, 3.45, 3.45 + i0.0003 respectively [19, 21]. 3 Analysis and results 3.1 Electromagnetic analysis For 1 × 1 waveguide switch depicted in figure 1, the contour plots of IL and ER as a function of lGST and hGST are shown in figure 4. With the increase in lGST , both IL and ER increase for lGST <1 µm. For any fixed value of lGST , the decrease in hGST results in increased IL due to low confinement of optical mode in thinner guiding layer. Most part of the optical mode sees the air as it reaches the etched region of the waveguide and hence the increased scattering and reflection losses. As can be seen from figure 4(a); for hGST <80 nm and lGST >320 nm, switch exhibits high IL in the range of 6 -- 15 dB. As shown in figure 4(b), the negative ER is observed in this region since the loss in a-GST is larger than c-GST. This happens due to lower confinement of optical mode in a-GST as compared to that in c-GST owing to higher real part of refractive index of c-GST in comparison to that of a-GST. With the increase in hGST 5 A PREPRINT - SEPTEMBER 12, 2019 (a) (b) a-GST lGST=920 nm c-GST lGST=920 nm Figure 7: Three-dimensional simulations of the designed hybrid 1 × 1 Si-GST waveguide switch with optimized values of GST dimensions substituted in partially etched silicon waveguide for the (a) ON state (a-GST) and the (b) OFF state (c-GST). 1.0 0.8 0.6 r e w o P l a c i t p O t u p t u O d e z i l a m r o N 0.4 0.2 0.0 (a) a-GST c-GST bar cross bar cross 0 10 20 30 lGST ( m) 40 (b) (c) a-GST c-GST Figure 8: (a) Normalized output optical power as a function of device length lGST for the cross and the bar state. The power distribution in (b) cross state and (c) bar state. beyond 80 nm, the ER continues to increase, but saturates to around ∼ 14 dB. Figure 5 shows the electric field profile along the length of the waveguide. In this figure the value of hGST and lGST is 240 nm and 1020 nm respectively. For these dimensions the IL and the ER are found to be 1.36 dB and 14 dB respectively. The back reflection in this case is -11.98 dB and -26.73 dB for ON and OFF state respectively. For obtaining the improved performance, we investigated the waveguide switch as shown in figure 2. This design gives drastic improvement in switch performance in terms of IL and ER and at the same time provides reduced scattering and back reflections. For this switch, the contour plots of IL and ER are shown in figure 6. The maximum ER obtained is 34.04 dB with an IL of 0.49 dB. These values of ER and IL are obtained for the GST volume of 800 nm × 260 nm × 920 nm (w × h × l). The back reflection for this design is -16.71 dB and -28.73 dB for ON and OFF state respectively. When compared with previous design there is an improvement of 14 dB in IL and 20 dB in ER. The optical field profiles for the optimized switch in the ON and OFF states are shown in figure 7. In 1 × 2 directional coupler switch, we plotted output optical power emerging from the bar and the cross port as a function of device length lGST . Using these plots, coupling length lc are obtained for different values of coupler gap 'g'. To give a particular example, the normalized optical power with the value of g = 100 nm for both phases of the GST is plotted in figure 8(a). In case of a-GST, the light launched from the Si waveguide couples to the hybrid waveguide after traveling a distance equal to the coupling length lc = 52 µm with a coupling ratio of 85.56 %. However, in case of c-GST, the coupling is weaker due to large difference in refractive index between Si and hybrid waveguide, therefore almost all the light remains in the Si waveguide even after travelling a distance equal to lc and the coupling ratio is just 1%. The high output can be obtained in cross or bar state by selection of proper value of lGST . The calculated performance parameters of the switch are listed in Table 1. As can be seen from the table that in both phases of GST, the CR decreases with increase in the value of g. This is due to the dependence of power transmission along the device 6 A PREPRINT - SEPTEMBER 12, 2019 Table 1: Calculated Parameters of 1 × 2 Directional Coupler Switch With Amorphous and Crystalline Phases of GST. Gap Coupling length Amorphous Crystalline g (nm) 50 75 100 125 150 175 200 lc (µm) 36 42 52 56 65 73 82 CR % 92.00 91.64 85.56 79.78 73.88 57.14 47.05 EL (dB) 1.07 1.08 1.1 1.22 1.41 1.54 1.66 ILcross ILbar (dB) 1.77 1.52 1.90 2.24 2.72 3.95 4.76 (dB) 9.83 11.92 9.66 8.18 7.22 5.10 4.42 CR % 1.04 1.60 1.10 0.83 0.57 0.27 0.19 EL (dB) 1.13 1.23 1.13 1.18 1.39 1.41 1.53 ILcross ILbar (dB) 20.02 18.95 20.49 22.06 23.91 26.75 28.43 (dB) 1.18 1.33 1.33 1.28 1.37 1.39 1.48 (a) Crystallization (b) Figure 9: (a) The temperature profile of optimized 1 × 1 waveguide switch and (b) zoom in view of GST region for the process of crystallization. length on the optical phase matching. The switch corresponding to the value of g = 100 nm can provide ER of 18.59 dB and 8.33 dB in cross and bar state respectively. For such an extinction ratio the active length required is 52 µm. The cross and bar states of this switch for g value of 100 nm are illustrated in figure 8(b) and (c) respectively. 3.2 Thermal analysis In this section, we present the investigations of electrically induced phase transition in GST using voltage pulses. The phase transition of GST from a-GST to c-GST and vice-versa is induced by heating the GST through Joule heating. For this purpose, we implemented an electro-thermal co-simulation model using the CST Microwave Studio. In this co- simulation model, the electrical simulations predict the current and voltage distributions in the device, while thermal simulations are used to obtain temperature distribution in the device. The governing equations for the electrical and thermal simulations are the following: ∇ · [σ(x, y, z, t)∇V ] = 0 ∇ · [k(x, y, z)∇T ] + Q = Cv( dT dt ) Q = σE 2 7 (1) (2) (3) A PREPRINT - SEPTEMBER 12, 2019 (a) Amorphization (b) Figure 10: (a) The temperature profile of optimized 1 × 1 waveguide switch and (b) zoom in view of GST region for the process of amorphization. In (1), σ and V represents the electrical conductivity of the material and applied voltage respectively. In (2), k, T and Cv denotes the thermal conductivity, temperature and volumetric heat capacity respectively while Q is the Joule heat generation associated with electric field (E) and is represented by (3). For GST, the electrical conductivity depends upon temperature and its phase, and exhibit a sharp increase in conductivity on transformation from a-GST (σa−GST = 3Ω−1m−1) to c-GST (σc−GST = 2770 Ω−1m−1) [22]. Material properties used for the thermal simulations are presented in Table 2 [23, 24, 25]. In order to find the voltage and energy required for complete phase transformation of the GST, we recorded the rise in temperature for a different set of applied voltages. The duration of voltage pulses is chosen as 100 ns and 10 ns for amorphous to crystalline and crystalline to amorphous phase transformation respectively [26, 27]. For crystallization, the GST layer should be heated above 140 ◦C but below 546 ◦C (melting temperature) to induce complete phase transition. For 1 × 1 waveguide switch, results are presented for the optimized dimensions of switch design, in which an 0.92 µm length GST layer having a cross section of 800 × 260 nm2 is embedded in partially etched Si waveguide, as shown in figure 7. The Si layer beneath the GST is N-type doped with doping density of 10−17 cm−3 to provide adequate electrical conductivity (σ = 103Ω−1m−1). The doping of Si layer leads to the slight modification in IL and ER. The new values of IL and ER are 0.52 dB and 33.79 dB respectively. Our simulation results show that switching to the crystalline phase can be achieved by applying a 5 V rectangular voltage pulse of 100 ns duration, which increase the maximum temperature of the GST to 255 ◦C. Figure 9(a) shows the spatial distribution of temperature in the device for the process of crystallization. To confirm whether the whole GST volume temperature is raised above the 140 ◦C, we analyzed three dimensional thermal profile of the GST region illustrated in Fig 9(b). The zoom-in view of GST indicates that the crystallization is induced in the whole GST layer. The energy consumed during the process is estimated to 0.9 nJ. To induce amorphization, the GST material should be heated above the melting temperature for a short amount of time, and cools down to the disordered amorphous phase. Our simulation results demonstrate that a voltage pulse of 7.5 V applied for 10 ns duration increased the device temperature to a maximum of 1120 ◦C. The energy consumed Table 2: Coefficients Used for the Thermal Simulations Coefficients SiO2 Si ITO a-GST c-GST Density (Kg/m3) 2202 2329 Specific heat (J/Kg K) Thermal cond. (W/mK) 746 1.38 713 140 6800 1340 5 6150 212 0.19 6150 212 1.58 8 A PREPRINT - SEPTEMBER 12, 2019 (a) Crystallization (b) Figure 11: (a) The temperature profile of optimized 1 × 2 directional coupler switch and (b) zoom in view of center of GST loaded arm for the process of crystallization. (a) Amorphization (b) Figure 12: (a) The temperature profile of optimized 1 × 2 directional coupler switch and (b) zoom in view of center of GST loaded arm for the process of amorphization. corresponding to the applied voltage is 22.8 nJ. Spatial distribution of temperature for the process of amorphization is shown is figure 10(a). The zoom-in view of GST layer shown in Fig 10(b) confirms that the amorphization is induced in the whole GST layer for the considered voltage. The above mentioned procedure is also used for the thermal analysis of 1 × 2 directional coupler switch with a gap of 100 nm and coupling length of 52 µm. Like the case of 1 × 1 switch, the Si layer beneath the GST is doped with N-type impurity. Such doping of silicon layer results in an ER of 10.33 dB and 5.23 dB for the cross and bar state respectively. For crystalline to amorphous phase transition, we applied a 6 V voltage pulse for a duration 100 ns. This pulse raised the temperature of GST region to a maximum of 213 ◦C as can be seen from the temperature profile of switch. The top view of the same is shown in figure 11(a) while inset shows the cross-section view. The zoom in view from the center of GST loaded arm is shown in figure 11(b). As can be seen from figure 11(b) the temperature rise is sufficient for crystallization of whole GST region. The energy consumed in this process is 5.77 nJ. For the reverse process, a voltage pulse of 7.5 V of duration 10 ns raised the maximum temperature of the GST to 814 ◦C as can be seen from the temperature profile of the switch. The top view of the same is shown in figure 12(a) while inset shows the cross-section view. The zoom in view from the center of the GST loaded arm is shown in figure 12(b). As can be seen from the figure 12(a) the temperature rise is sufficient for amorphization of whole GST region. The energy consumption for the process of amorphization is 38.9 nJ. 9 A PREPRINT - SEPTEMBER 12, 2019 4 Conclusion We have designed and theoretically analyzed ultra-compact hybrid Si-GST switches for the emerging wavelengths window of Mid-IR around 2 µm. In a 1 × 1 waveguide switch, we obtained 33.79 dB extinction ratio with 0.52 dB insertion loss at 2.1 µm for an optimized GST length of only 0.92 µm. Reversible on-off switching is achieved by electrical actuation of GST through ITO electrodes. The amorphous to crystalline transition in GST is induced by a 5 V voltage pulse corresponding to the energy consumption of 0.9 nJ. While in case of crystalline to amorphous transition a 7.5 V voltage pulse is sufficient to increase the GST temperature to 1120 ◦C, and the energy consumed during this process in 22.8 nJ. Moreover in both cases, the phase change happens in the complete GST region. In a 1 × 2 directional coupler switch, we showed that reversible switching between the cross-bar state can be achieved with an extinction ratio of 10.33 dB and 5.23 dB in the cross and bar state respectively with an optimized active length of only 52 µm. The voltages required for amorphization and crystallization of GST are 6 V and 7.5 V respectively. The energy consumed for a complete cycle of phase transition is 44.67 nJ. 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1801.10569	1	1801	2018-01-31T17:38:15	A polymer based phononic crystal	[ "physics.app-ph" ]	A versatile system to construct polymeric phononic crystals by using ultrasound is described. In order to fabricate this material a customised cavity device fitted with a 2 MHz acoustic transducer and an acoustic reflector is employed for standing wave creation in the device chamber. The polymer crystal is formed when the standing waves are created during the polymerisation process. The resulting crystals are reproduced in the shape of the tunable cavity device, and add unique periodic features. Their separation is related to the applied acoustic wave frequency during the fabrication process and their composition was found to be made up to two material phases. To assess the acoustic properties of the polymer crystals their average acoustic velocity is measured relative to monomer solutions of different concentrations. It is demonstrated that one of the signature characteristics of phononic crystal, the slow wave effect, was expressed by the polymer. Furthermore the thickness of a unit cell is analysed from images obtained from an optical microscope. By knowing the thickness the average acoustic velocity is calculated to be 1538 m/s when the monomer/cross-linker concentration is 1.5 M. This numerical calculation closely agrees with the predicted value for this monomer/crosslinker concentration of 1536 m/s. This work provides a methodology for accessing a new type of adaptable phononic crystal based on flexible polymers.	physics.app-ph	physics	A polymer based phononic crystal Nan Lia,∗, Christopher R. Loweb, Adrian C. Stevensona aDepartment of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge, CB3 0AS, UK bCambridge Academy of Therapeutic Sciences, University of Cambridge, 17 Mill Lane, Cambridge, CB2 1RX, UK 8 1 0 2 n a J 1 3 ] h p - p p a . s c i s y h p [ 1 v 9 6 5 0 1 . 1 0 8 1 : v i X r a Abstract A versatile system to construct polymeric phononic crystals by using ultrasound is described. In order to fabricate this material a customised cavity device fitted with a ∼2 MHz acoustic transducer and an acoustic reflector is employed for standing wave creation in the device chamber. The polymer crystal is formed when the standing waves are created during the polymerisation process. The resulting crystals are reproduced in the shape of the tunable cavity device, and add unique periodic features. Their separation is related to the applied acoustic wave frequency during the fabrication process and their composition was found to be made up to two material phases. To assess the acoustic properties of the polymer crystals their average acoustic velocity is measured relative to monomer solutions of different concentrations. It is demonstrated that one of the signature characteristics of phononic crystal, the slow wave effect, was expressed by the polymer. Furthermore the thickness of a unit cell is analysed from images obtained from an optical microscope. By knowing the thickness the average acoustic velocity is calculated to be 1538 m/s when the monomer/cross-linker concentration is 1.5 M. This numerical calculation closely agrees with the predicted value for this monomer/cross- linker concentration of 1536 m/s. This work provides a methodology for accessing a new type of adaptable phononic crystal based on flexible polymers. Keywords: phononic crystal, polymer crystal, slow wave effect, acoustic standing wave, polyacrylamide 1. Introduction Phononic crystals occur naturally as the result of the periodic nature of atomic crystals. The concept of artifi- cial phononic crystals was proposed decades ago [5, 12] and significant interest has followed since but not lim- ited [29, 30, 24, 23, 8, 9, 7]. The attraction is that these materials can potentially address enduring engi- neering challenges in acoustics as they introduce physi- cal effects that change the very nature of acoustic wave excitation and propagation. They can be commonly achieved by periodically altering the density or bulk modulus, so that the acoustic waves propagation de- pends on wavelength, which in turn alters the group ve- locity, phase velocity and the non-linear properties of the material. Alternatively for subwavelength period- icity evanescent acoustic surface waves have also been employed [28]. Together the breadth of phononic crys- tal applications is considerable with band gap and band edge states able to disperse the group velocity and bend ∗Corresponding author Email address: [email protected] (Nan Li) Preprint submitted to Elsevier acoustic waves [27, 22], leading to applications includ- ing signal processing [1, 20] and opportunities to reduce thermal conductivity [10, 11]. This rapidly growing field of study originated in bulk materials, however it was difficult to produce the peri- odic properties. Initially this was achieved by combin- ing bulk acoustic wave devices to make filters. This ac- tivity became easier with surface acoustic wave devices and their metallic grating [28, 13]. These have provided excellent acoustic propagation control, and so these de- vices control acoustic waves to provide signal process- ing for mobile phones. A key development is the inter- digitated electrode structure. A periodic metal pattern is formed on a substrate, and interacts with a surface wave, typically a Rayleigh wave. Unfortunately this method cannot be used for bulk materials, so it cannot be used to modulate sound transmission in the larger environment. Nevertheless some attempts have been made to create bulk phononic crystals as a first step to creating acous- tic metamaterials. As a newly emerging field metama- terials display counter-intuitive physical effects. Due to the Bragg scattering caused by impedance contrast of the mass density or the elastic moduli, useful acoustic February 1, 2018 dispersion, band gap and slow wave effect emerge. Al- though the theoretical research of phononic crystals is rich in numerical models, fabrications methods are rare. These broadly consist of solid sphere arrays embedded in soft matrix [15, 25, 6, 14]. Or more recently, 3D printing technology is used for phononic crystal fabri- cation [17]. Because of these limited options, most of these crystals are built slowly, layer by layer. We report a versatile method to add multiple peri- odic features using a monomer/cross-linker solution as a starting point. This method applies acoustic standing waves to an acrylamide system undergoing a polymeri- sation process. In the following sections we consider the theory of phononic crystals alongside bulk grating approaches. We describe the standing wave imprint- ing device, formulation of monomer/cross-linker mix and go on to analyse polymer images, imprinting mech- anism and acoustic transmission properties associated with these polymeric phononic crystals. 2. Theory The applications of acoustics often involve the inter- action of waves at the acoustic boundaries. Acoustic reflection occurs along a path associated with the inci- dent wave. Only part of the incident wave energy trans- mits from the first medium, referred as medium m here, into the second medium, referred as reflector r here. The most basic acoustic properties that determine this include the medium elasticity and density. The elas- ticity and density of a medium determine the acoustic impedance Z, which in turn governs the transmission coefficient T and the reflection coefficient R. Both T and R are independent from the energy flow direction. Under the condition of normal incidence, (cid:12)(cid:12)(cid:12)(cid:12)(cid:12)(cid:12) Zr − Zm Zr + Zm (cid:12)(cid:12)(cid:12)(cid:12)(cid:12)(cid:12) R = 1 − T = (1) A typical acoustic phononic crystal is a collective cluster of a number of unit cells made up of two layers with an acoustic boundary in between. To comprehend the waves propagation in a periodic structure, it is es- sential to understand the nature of the wave eigenmode in it. Bloch indicated that a wave propagating in a pe- riodic structure is a superposition of a series of plane wave [3]. The Bloch theorem is expressed as: ψk(r) = uk(r)eikr (2) Where k is the wave vector, r is the position, e is Eu- ler's number, i is the imaginary unit. uk(r) is the peri- odic function of the crystal lattice with uk(r) = uk(r+R) 2 in which R is the periodicity of the crystal lattice. Being different from the velocity definition of a particle, waves have three types of velocities, including phase velocity vph , group velocity vg and energy velocity ve, amongst which the phase velocity refers to the propagation of an equiphase surface; the group velocity to the propagation of a wave pocket; and the energy velocity to the prop- agation of energy. The group velocity is proved to be equivalent to the energy velocity of a Bloch wave [26], i.e.: vg = ∂ω(kr) ∂kr = sk wk = ve (3) Where ωr(k) holds dispersion relation with kr, sk = (cid:104)s(cid:105)ω(kr) and wk = (cid:104)w(cid:105)ω(kr) are the average wave en- ergy flow density and wave energy density respectively. While the phase velocity applies to a wave at single fre- quency, i.e.vph = ω/k. A key feature is when the length scale of the periodic structure is comparable to the wavelength of the wave, the excitation of the unit cells leads to a strong resonant scattering. Thus the action of the phononic crystal can be evidenced by this strong resonant scattering and a "slow wave effect" [27, 22]. 3. Experimental setup In order to fabricate the polymer crystal, a bespoke ultrasonic cavity chamber is employed for holding the monomer/cross-linker solution within the field of de- fined acoustic standing waves. To assess the subsequent interaction of developed polymer crystals with acoustic waves, a series of average acoustic velocity measure- ments have been obtained at room temperature. The following subsections present the design concept of this adjustable cavity device, the procedure for fabricating the polymeric phononic crystal and the acoustic veloc- ity measurements needed to characterise the material. 3.1. Adjustable polymeric phononic crystal fabrication tube The basic design concept allows flexible creation of polymer crystals. It functions by projecting wave en- ergy into the device cavity chamber which in turn con- tain trapped standing waves. Here the pressure waves interact with the liquid phase monomer/cross-linker. The resulting acoustic field depends on constructive and destructive interference of the acoustic waves which de- pend on sample properties and separation of the trans- ducer and reflector. The distance is tuned to be a multi- ple of half wavelength to form the standing wave. Hence this design allows pathlength phase adjustment between the transducer and the reflector, which is essential for fabricating high quality polymer crystals. Figure 1: Phononic crystal fabrication tube. The acous- tic waves arise from the acoustic transducer and reflect at the boundary between the medium and the acoustic reflector. The incident wave interacts with the reflected wave constructing an acoustic standing wave. The dis- tance between the acoustic transducer and reflector can be adjusted by turning the translation screw attached to the left PTFE disc. The chemicals are fed into the glass tube through the chemical inlet on top of the tube. The main device body consists of a glass tube (Soham Scientific, Ely, UK) with an inner diameter of 30 mm. The space available for the monomer solution is con- fined within the glass tube by two circular discs made from polytetrafluoroethylene (PTFE). One incorporates a 2 MHz acoustic transducer of 25mm in diameter (No- liac, Denmark) whilst the other supports an acoustic re- flector made from stainless steel. The distance between the transducer and the steel reflector can be regulated by a translation screw that converts rotary motion into the linear disc motion inside the glass tube (Figure 1). Table 1: Acoustic properties of selected solid materials [19] This table is sorted according to the reflection coefficient R in descending order. vl is the longitudinal acoustic wave travelling speed; ρ is the density; Z is the acoustic impedance. material platinum gold stainless steel copper silver brass titanium iron cast lead aluminium glass silica polystyrene vl(mm/µs) 3.26 3.24 5.79 5.01 3.60 4.70 8.27 5.90 2.20 6.42 5.90 2.34 ρ(g/cm3) 21.40 19.70 7.69 8.93 1.60 8.64 5.15 7.69 11.20 2.70 2.20 1.04 Z (MRayl) R 84.74 62.60 45.63 41.46 37.76 37.30 27.69 25.00 24.49 17.33 13.00 2.47 0.966 0.954 0.937 0.931 0.925 0.924 0.899 0.888 0.886 0.840 0.796 0.251 To maximise the reflected acoustic waves so that en- 3 ergy is largely trapped in the tube, the acoustic reflec- tor is selected to maximise the acoustic impedance mis- match between medium and reflector. The acoustic impedance of the monomer solution is assumed to equal water at 1.48 MRayl at 20◦C [4]. The properties of po- tential materials are listed in Table 1. They are sorted in descending order according to their reflection coeffi- cient R. Platinum or gold produces the best reflection performance, however for this application the stainless steel disc is more accessible and practical. 3.2. Polymeric phononic crystal fabrication The periodic structure that emerges is associated with the acoustic standing wave field in the fabrication tube chamber. An HP 33120A signal generator in-line with an ENI 310L power amplifier is arranged to excite the piezo disc at its natural resonant frequency. Figure 2 il- lustrates the fabrication setup. A 4 mL monomer/cross- linker solution containing 98.5 mol% acrylamide and 1.5 mol% N,N'-methylenebisacrylamide(MBA) is used to fill the fabrication tube. The chemical initiators, in- cluding 48 µL 10%(w/v) freshly prepared ammonium persulfate (APS) and 4 µL tetramethylethylenediamine (TEMED) are loaded and the chemical inlet sealed. The tube is shaken gently to achieve thorough mixing of the reagents. The device is left on the table in a secure hori- zontal position. The signal generator energises the piezo disc (Noliac Ceramics NCE51) at Vpp 90 mV at its res- onant frequency. The translation screw knob is adjusted and a periodic structure forms in the tube that is clearly visible to the naked eye. The distance between the piezo disc and the stainless steel reflector is approximately ∼6 mm. The polymerisation process takes less than 1 min. The signal generator and the amplifier are switched off at a predetermined time corresponding to the onset of polymer rigidification. 3.3. Acoustic velocity measurement of the polymer To investigate any slowing effect on acoustic waves we measured their average acoustic velocities and com- pared to their counterparts using a pulsed based setup. Figure 3 illustrates how the acoustic velocity through a polymer block is measured. An acoustic signal burst generated by the transducer A travels through the tank media to reach transducer B. If a polymer block is placed in path A-B a time difference ∆t results. Re- arranging the time difference calculation Equation 4, Equation 5 gives the average acoustic velocity through the polymer alone, cp. − thp cw thp cp ∆t = (4) Table 2: Coefficients for acoustic velocity calculation in water i 0 1 2 ki 1404.30 4.70 -0.04 4. Results and discussion 4.1. The polymeric crystal The nature of the polymer crystal is related to the acoustic standing wave field and the shape of the fab- rication tube. The process employed for making the polymer cyrstal is described in section 3.2. The result- ing crystal after stabilisation is a 6mm thick polymer disc with a diameter of 30 mm. Importantly, the disc contains distinct layers that can be seen by the naked eye. To help interpret the nature of layers we consider a simplified approach here. Figure 4: Phononic structures made with 4 MHz (b) PC I and 2 MHz (b) PC II acoustic transducers. The la- bels h1 and h2 (a) are of the same length. While h1covers about two spacial periodicities of the phononic crystal shown on PC I, h2 covers only one of PC II. The mechanism determining the formation of the polymer crystal is still unconfirmed. Nevertheless the resulting patterns definitely emerge from pressure wave action on the monomer mix during the cross-linking process. If we move forward with a simple interpre- tative models, it is reasonable to conclude the rate of poylmer cross linking is proportional to the amplitude of the acoustic standing wave. Thus subject to the nodal or antinodal conditions the resulting material is likely to be biphasic, ie containing two different mechanical phases. Here the antinodes should produce a stiffer ma- terial and conversely at the nodes a less stiff material. Thus light passing through the polymer may experience 4 Figure 2: The polymeric phononic crystal fabrication setup. The acoustic transducer in the fabrication tube is actuated by a signal generator, which passes through a power amplifier before the electric signal reaches the transducer. Figure 3: Experimental method to determine the aver- age acoustic velocity across the polymer. The acoustic bursts travelling time difference ∆t=t1 − t2 is recorded, where t1 is the time that an acoustic burst travels from acoustic transducer A to B without a polymer block in between, while t2 is the travelling time when a polymer is placed between A and B. cp = thp ∆t + thp/cw (5) Where thp is the polymer thickness measured with a digital calliper. To minimise measurement error due to the polymer creep, hard plastic discs of known thickness are placed on either side of the polymer crystal during measurement. cw is the acoustic velocity in water and depends on temperature. cw used in this study is calcu- kiT i. This sim- lated from a quadratic equation cw= plified equation is reasonably accurate over the 15-35◦C temperature range [16]. The coefficient ki are given in Table 2 and T is the temperature of water in Celsius. The water temperature used for the velocity measure- ments is controlled at 23± 0.2◦C and corresponds to 1491 m/s. 2(cid:80) i=0 a difference in propagation path leading to a visible con- trast, which matches our experimental observations. Optical microscopy was used to evaluate the quality of the crystals formed. A 1 mm thick piece of polymer crystal was used to assess line definition and spacing. This was sliced perpendicular to the radial plane with the cross-section facing the lens of a 4 times magnifica- tion microscope. The grey values of the selected cross- section area is plotted as a 3D surface shown in Fig- ure 5 (a). To assist with periodicity analysis, a profile analysis was performed and shown in Figure 5 (b). The pixel grey values along a line are presented in Figure 5 (c) z-axis. Two light and shaded striations stand out signifying a biphasic material form. Based on an aver- age wavelength of 0.712±0.0077 mm (8 measurements) and a 2.16 MHz standing wave frequency the average acoustic velocity was found to be 1538 m/s, which is consistent with interpolated values for acoustic velocity vs. acrylamide concentration in Section 4.3. Here the patterns were coherent and consistently well-formed. The transducer frequency determines the spacing in the crystal structure. The data shown in Figure 4 reveals the patterns can be formed with the periodicity decreas- ing proportionally with frequency. This is evidenced by the factor 2 increase in frequency yielding the expected factor 2 reduction in periodicity. Thus the microscopy data reveals contrast that is linked to material changes, so alternating bright and dark regions are a record of the acoustic field during crosslinking. However it is un- proven whether the fluctuations in brightness are due to a mechanical periodicity. 4.2. The structurised polymer under scanning electron microscope (SEM) SEM data was used to confirm mechanical periodic- ity in the polymer crystal. Here the SEM data in Figure 6 shows the cross-section topology is periodic indicat- ing an underlying variation of hills and valleys across the sample cross-section. Furthermore these regions in- clude elongated voids and circular voids, confirming the recording of entrenched periodic mechanical properties by the standing wave. Thus it would imply the inherent potential to scatter an acoustic wave. Freeze drying of the acrylamide polymers was found to reduce structural coherence by imposing unequal forces on the structure. Thus the SEM images which were useful in identifying the mechanical periodicity of polymer, also confirms that drying of the polymer will distort the structure. Thus water content does influence the coherence of these polymer crystals. As crystallisa- tion patterns have been successfully recorded and con- firmed the optical and SEM data it is useful to study 5 Figure 5: Optical images of a high quality polymer crys- tal: (a) is a simulated 3D profile via the 3D spectrum plot. Here the z-axis shows the grey value where 0 rep- resents black and 255 is white, and the x-axis is per- pendicular to the direction of the periodic structure and y-axis is parallel. (b) shows the original selected region that formed the presented in (c) acoustic wave transmission through them. In particular based on the theory of "the slow wave effect" we inves- tigate the important scattering and velocity relationship. 4.3. Average acoustic velocity across the polymer We investigated the relation between the acoustic ve- locities of polymer crystals according to different poly- acrylamide concentrations. As a reference point the sig- nal from the counterpart material was also measured. These counterparts are fabricated in the same cavity de- vice and corresponding acrylamide solutions, but dur- ing polymerisation the acoustic standing wave field is absent. Therefore no periodic structure emerges. The polymer explore acrylamide concentrations between 5 %(w/v) and 40 %(w/v) in 5 %(w/v) intervals. The corresponding polymer acoustic velocities are presented in Figure 7. A positive linear correlation be- tween the acrylamide concentration and average acous- tic velocity is observed. The general linear model func- tion in SPSS reveals a correlation between the concen- tration of acrylamide and acoustic velocity across the Figure 7: Acoustic velocities across the polyacrylamide based phononic crystals and their counterparts made from a series of concentration monomer solutions. is 0 %(w/v), the acoustic velocity cm tends to pure water lim%(w/v)→0 cm = cw. The intercepts for both cw, i.e. fitting lines thus should have been set at the acoustic velocity of water at ambient temperature. However, it must be noted for pure water, the acoustic standing wave still induces a periodic structure as shown in Figure 8. Thus the surprising result is that a temporary periodic field can also lead to a velocity shift. Figure 8: The periodicity introduced in pure water by acoustic standing waves. λw is the wavelength of acous- tic wave in water and λw/2 labels one unit of the period- icity. The partitioning mechanism leading to the formation of a unique periodic structure in polyacrylamide is com- plex. Copolymerisation of acrylamide and MBA is al- ready more involved than the standard free radical poly- merisation [18]. One perspective is that when poly- merisation is taking place a sequence of events occur in the micro-environment varying pressure and energy and physico-chemical conditions over time and space. This exacerbates polymerisation complexity. Thus a working 6 Figure 6: The SEM images taken of the polymer at two different magnifications confirm that the acoustic stand- ing wave records periodic mechanical variations in the monomer mix. polymer crystal. The p-value of interest is 0.001. The fact that it is smaller than the predetermined significance level 0.05 suggests these two fitting lines are indepen- dent. A key finding is the average acoustic velocity (at 1 MHz) of the polymer crystals is lower than their bulk polymer conterparts. This agrees with the slow wave effect. Here the periodic structure of a phononic crys- tal interacts with the waves. Although the temporal co- herence is maintained with the incident acoustic wave, the scattering has a noticeable impact on the group ve- locity [21]. In Section 4.1 the optical evaluation of a slice of the polymer crystal indicates the average acous- tic velocity through it is 1538 m/s. The monomer/cross- linker solution used in that experiment is 1.5 M equiv- alent to 10.85 %(w/v). Substitute the acrylamide factor with 10.85%(w/v) in the orange fitting line in Figure 7, it gives an average acoustic velocity 1536 m/s as a result in accordance with the optical evaluation value. One may argue that when the monomer concentration hypothesis which is one of several yet to be confirmed, is that the acoustic standing waves promote a density differential over space. As the polymer chains elongate, they become insoluble and precipitate. These precip- itates have a different density from the solution. As an acoustic pressure gradient from standing wave pre- vails, the partially polymerised matter moves towards the nodes. Meanwhile, the monomer concentration and cross-linker also affect the polymer elasticity modulus and density [2]. Overall more investigation of the event sequence is needed to isolate the mechanism. phononic crystals at both large and small scales within the time scale of one minute. 6. Acknowledgement The authors are grateful to Dr Jeremy Skepper for as- sistance with SEM imaging of the sample and to Dr Ke Xu Zhou for helpful discussions on the mechanism. For part of this work, Dr Nan Li was funded by the Cam- bridge Overseas Trust. 5. Conclusion A novel approach for fabricating polymeric phononic crystals with acoustic standing waves has been demon- strated. The cavity device follows a well established approach to create a standing wave field suitable for the polymer transformation. The starting form prior to cross-linking, comprises a 4 ml monomer/cross-linker solution plus polymerisation chemical initiators. The resulting form of the polymer crystal mirrors the cylin- drical shape of the fabrication tube producing 30 dis- tinctive layers. These have alternating refractive indices that are visible to naked eye. The resultant polymeric phononic crystals were in- vestigated by observing under an optical microscope and in transmission via an SEM. The latter provides detailed information on the periodic structure, the pore sizes in the polymer and the scale of the change. Vi- sualising the periodic structure and determining its pe- riodicity, provides an approximate calculation of the average acoustic velocity across the phononic crystal. The value 1538 m/s closely agrees with the interpo- lated value from the direct acoustic velocity measure- ments 1536 m/s. The refractive index differences can be attributed to variable monomer concentration affecting the elasticity. The acoustic velocity of pulses travelling through these phononic crystals and their counterparts are evaluated. The group velocity of the phononic crys- tals shows a lower acoustic velocity relative to counter- parts of the same shape that omit periodic structures. These measurements match with theoretical studies of the behaviour of the slow wave effect in phononic crys- tals. Contrasting with existing work this rapid fabrication approach does not necessitate the inclusion of parti- cles, reducing complexity and saving fabrication time and costs. In its native form it is capable of creating unit cells from the standing wave planes adding impor- tant local resonance behaviour to the polymer. Thus it provides a significant shortcut for fabricating polymeric 7 7. References References [1] Sarah Benchabane, Abdelkrim Khelif, J-Y Rauch, Laurent Robert, and Vincent Laude. 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1910.12135	1	1910	2019-10-26T20:31:19	Effect of carbon-based nanoparticles on the ignition, combustion and flame characteristics of crude oil droplets	[ "physics.app-ph" ]	The use of in-situ burning (ISB) as a clean-up response in the event of an oil spill has generated controversy because of unburned hydrocarbons and products of incomplete combustion left behind on an ISB site. These substances threaten marine life, both in the ocean and on the ocean floor. Treating crude oil as a multicomponent liquid fuel, this manuscript investigates the effect of carbon-based nanomaterials, acetylene black (AB) and multi-walled carbon nanotube (MWNT), on the combustion and flame characteristics of crude sourced from the Bakken formation (ND, USA). Sub-millimeter droplets of colloidal suspensions of Bakken crude and nanomaterials at various particle loadings were burned, and the process was captured with CMOS and CCD cameras. The resulting images were post-processed to generate burning rate, ignition delay, total combustion time, and flame stand-off (FSR) ratio data for the various crude suspensions. A maximum combustion rate enhancement of 39.5% and 31.1% was observed at a particle loading of 0.5% w/w acetylene black nanoparticles and 0.5% w/w multi-walled carbon nanotubes, respectively. Generally, FSR for pure Bakken was noted as larger than for Bakken with nanoparticle additives. These results are expected to spur further investigations into the use of nanomaterials for ISB crude oil clean-ups.	physics.app-ph	physics	Effect of carbon-based nanoparticles on the ignition, combustion and flame characteristics of crude oil droplets Gurjap Singha, Mehdi Esmaeilpourb, Albert Ratnera a Department of Mechanical Engineering, The University of Iowa, Iowa City, IA 52242, USA b College of Information Technology and Engineering, Marshall University, Huntington, WV 25755, Corresponding author: [email protected] USA Abstract The use of in-situ burning (ISB) as a clean-up response in the event of an oil spill has generated controversy because of unburned hydrocarbons and products of incomplete combustion left behind on an ISB site. These substances threaten marine life, both in the ocean and on the ocean floor. Treating crude oil as a multicomponent liquid fuel, this manuscript investigates the effect of carbon-based nanomaterials, acetylene black (AB) and multi-walled carbon nanotube (MWNT), on the combustion and flame characteristics of crude sourced from the Bakken formation (ND, USA). Sub-millimeter droplets of colloidal suspensions of Bakken crude and nanomaterials at various particle loadings were burned, and the process was captured with CMOS and CCD cameras. The resulting images were post-processed to generate burning rate, ignition delay, total combustion time, and flame stand-off (FSR) ratio data for the various crude suspensions. A maximum combustion rate enhancement of 39.5% and 31.1% was observed at a particle loading of 0.5% w/w acetylene black nanoparticles and 0.5% w/w multi-walled carbon nanotubes, respectively. Generally, FSR for pure Bakken was noted as larger than for Bakken with nanoparticle additives. These results are expected to spur further investigations into the use of nanomaterials for ISB crude oil clean-ups. Keywords: Crude oil; Bakken; acetylene black; carbon nanotube; droplet combustion; colloidal suspension; carbon nanoparticle; in situ burning. Abbreviations: AB: acetylene black CCD: charge-coupled device CMOS: complementary metal-oxide semiconductor FSR: flame stand-off ratio GC-MS: gas chromatography-mass spectrometry ISB: in situ burning MWNT: multi-walled carbon nanotube 1 Highlights: • Carbon-based nanomaterials mixed into Bakken crude oil at various particle loadings • Spherical sub-millimeter droplets burned using well-validated experimental setup • Burning rate, ignition delay, total combustion time, flame standoff ratio compared • Large increase in burning rate observed at small nanomaterial particle loadings • Results expected to increase in-situ burning effectiveness as oil spill response 1. Introduction Crude oil production has steadily increased since the 1940s due to worldwide population growth and increases in standards of living, and it is projected to keep increasing [1-2]. The shipping of crude oil has increased the risk of oil spills, which are defined as the release of liquid petroleum or crude oil (and their derivatives such as diesel) into the environment, especially the oceans and other marine environments. Many notorious oil spills on the high seas (such as the Deepwater Horizon incident) in the past have increased regulatory pressures on oil companies to take measures such as requiring double hulls on oil tankers [3] to decrease the number of these incidents. In addition to spills from oil tankers (which account for only 5% of total oil pollution), there are many other sources of oil spills, such as refinery terminals and oil wells [4]. Asia was the largest source of major oil spills from 1960 to 2010, with almost 3.4 million tons of oil released into the environment [5]. In the US, there are almost 25 spills per day into navigable waters [4]. Crude oil spill control and clean-up is a challenging topic with major implications for marine pollution management and environmental conservation. Large oil spills and the subsequent large-scale spill responses attract much public attention: the 1969 Santa Barbara oil spill that released 14,300 tons of crude oil is credited for providing the impetus for establishment of the US Environmental Protection Agency [3,6]. The aforementioned Deepwater Horizon incident released over 700,000 tons of crude oil into the oceans [7], which caused health issues for 40% of Gulf Coast residents, caused 5.5 billion dollars in damage to fishing and tourism industry, and polluted 692 km of marsh shoreline [5]. Because of the severe economic, human health, and environmental impacts of marine oil spills, many methods have been explored to develop spill response strategies. Their effectiveness depends on the size of the spill and crude oil composition. For a small oil spill, sorbents such as polyurethane pads can be used to soak up the crude oil on the surface [8], or solidifying agents can be used to constrain the spilled oil and recover it as a solid [9]. For larger oil spills, the oil is constrained using booms and can then be skimmed off using mechanical devices [10]. Chemical dispersants can be added to the oil spill to promote its emulsification into the ocean before it travels to the shore, which also promotes its biodegradation [11]. Bioremediation by using nitrogen-based fertilizers can also be used to promote biodegradation of the crude oil by microbes [12]. In situ burning (ISB) of crude oils, one of the oldest countermeasures for oil spills, remains in use today as well. All these methods have their drawbacks. For example, concerns have been raised over the aquatic toxicity of solidifiers and chemical dispersants. In situ burning, although desirable because of its ease of use in remote offshore areas, can leave significant amounts of unburned hydrocarbons in the water and releases a large amount of particulate matter into the air, contributing to marine and air pollution. Its effectiveness also depends on the type of crude being used, with heavy, emulsified crudes and weathered crudes having medium to low ISB burnability [5]. Systematic studies of crude oil combustion are rare in scientific literature and mostly related to pool fires. Previously, crude oil droplet combustion has been explored in the work of Singh et al. [13], where a comparison of the combustion and sooting properties of different US crudes (Bakken, Colorado, Pennsylvania, and Texas) was presented. It was found that crudes from Bakken, Colorado, and Pennsylvania burned at comparable rates, but Texas crude oil burned predominantly with violent microexplosions. Similarly treating crude oil as a multicomponent liquid fuel, this work develops a 2 method to improve the combustion efficiency of ISB by using carbon-based nanoparticles to increase the heat conductivity and radiation absorption of the crude oil. Note that ISB effectiveness has been reported to be positively dependent on radiation absorption [14]. Combustion properties of single spherical fuel droplets have been presented, which are expected to aid eventual mathematical modeling of the combustion process. The results also support the development of a mechanical device that will burn the crude skimmed off the spill surface in a droplet spray regime after mixing it with nanoparticles, which will lead to better burnability for heavy, emulsified, and weathered crudes, better combustion efficiency, and less particulate emissions than pool fires. The well-established experimental method used for this work has previously been used to characterize various combustion properties for liquid fuels, such as burning or combustion rate [13, 15-19], ignition delay [13, 18], and total combustion time [13, 18]. This benchtop method uses only a small amount of sample, which is important because of the high cost of the nanomaterials involved, especially multi- walled carbon nanotubes (MWNT). There are many challenges associated with the characterization of a multicomponent liquid fuel such as Bakken crude oil. It is a light and sweet variety of crude oil, composed mainly of low-to-medium boiling hydrocarbon fractions (see Appendix A). The presence of components that boil at different temperatures causes the burning droplet to shatter into fragments during the combustion process in an event called a microexplosion. Despite microexplosions, a significant part of the combustion regime follows the "𝑑2-law". This part of the combustion regime across different fuels was used to calculate and compare combustion rates. 2. Methods and materials The method used for this work has previously been detailed by Singh et al. [13, 18] and is based on the original work of Avedisian and Callahan [20] and Bae and Avedisian [21]. A brief explanation is as follows: three 16 µm SiC fibers are fixed on six poles arranged in a circle such that the fibers cross at the center (see Figure 1). A sub-millimeter fuel droplet is placed using a micro-syringe and ignited symmetrically using two hot wire loops on either side. As the droplet heats up and burns, the process is recorded using two high-speed cameras. One of the cameras is a black and white charge-coupled device (CCD) IDT X-StreamVision XS-3 (IDT Vision, Pasadena, CA, USA) operated at 1000 frames/second and fitted with a 105 mm lens (Nikon AF Micro-Nikkor-F/2.8, Tokyo, Japan), with backlighting provided by a single bright white LED at 3.3V. The other high-speed camera is a complementary metal-oxide semiconductor (CMOS) Casio EXILIM Pro EX-F1 (Casio, Tokyo, Japan) operating at 600 frames/second and recording the droplet combustion scene through a magnifying concave mirror (4.0" diameter, 9.0" focal length). 3 Figure 1. Experimental setup schematic showing the location of the fuel droplet and various components [13]. The CCD camera generates 8-bit grayscale image data with a resolution of 948 x 592 pixels. It is post- processed using ImageJ, an open-source digital image processing software [22-24] to generate a time series for the droplet area as it shrinks because of combustion. This data is used to find combustion rate and flame stand-off ratio. The CMOS camera generates color video footage that is post-processed using MATLAB ® (MathWorks, Natick, MA, USA) to generate time-series 8-bit/channel RGB frames with a resolution of 432 x 192 pixels. This data is used to determine the ignition delay and total combustion time. The initial droplet size 𝑑0 is sub-millimeter because larger droplets cannot be supported by the SiC ⁄ support fibers, but must exceed the criteria described by Avedisian and Jackson [25] to keep 𝑑0 𝑑𝑓𝑖𝑏𝑒𝑟 > 13 fibers, the droplet remains almost perfectly spherical during initial set-up and during most of the combustion process, other than the violent microexplosion regime. to match burning rates to unsupported droplets. Due to the small size of the supporting The base liquid fuel used in this work is Bakken crude oil acquired from the United States Northern Great Plains oil production region (North Dakota Bakken formation). Although crude oil properties (even from the same oilfield) may vary significantly, the typical specific gravity of Bakken crude is 0.815, and its initial boiling point is 21 ⁰C [26]. Appendix A contains gas chromatography-mass spectrometry (GC- MS) data for the sample used in this work, showing a multicomponent liquid that has a significant amount of low and medium boiling constituents. Two types of carbon-based nanomaterials including acetylene black (AB) and multi-walled carbon nanotube (MWNT) are used in this work. Acetylene black (AB) is a well-characterized electrically conductive material that is used as a charge collector in chemical batteries [27-29]. The AB used for this experimental work was obtained from Alfa Aesar (Ward Hill, MA, USA). It is a 100% compressed, 99.9% purity dark black solid powder with specific surface area 75 m2/g, bulk density 170-230 g/L, and mean particle size 25-45 nm. The MWNT used for this experimental work were obtained from Nanostructures & Amorphous Materials (Katy, TX, USA). These are short variety nanotubes with >95% 4 purity, outside diameter 8-15 nm, inside diameter 3-5 nm, length 0.5-2 µm, specific surface area 233 m2/g, and bulk density 360-420 g/L. Colloidal suspensions of 0.5%, 1%, 2%, and 3% w/w were prepared from the nanomaterials by mixing them with Bakken crude oil in 20 mL disposable scintillation glass vials (Fisher Scientific, Hampton, NH, USA). An ultrasonic disruptor (Biologics 3000 MP) with a 3/16" probe was used to mix the sample for 5 minutes. To minimize heat generation, the ultrasonicator was programmed to operate on pulses that were 4 s long with 4 s between them. Note that both the AB and MWNT colloidal suspensions prepared using this method have previously been found to form very stable suspensions in hydrocarbon-based liquid fuels [30]. 3. Results and discussion Many physical phenomena play a role in determining properties such as ignition delay, combustion rate, total combustion time, and flame standoff ratio of crude oil droplets. Addition of a solid dispersed phase (nanomaterials) leads to the decrease in vapor pressure of the continuous (liquid) phase, but in this case the solid dispersed phase forms a highly interconnected latticework of individual nanoparticles. Through radiometric temperature measurements, addition of these nanomaterials has been observed to raise the droplet temperature for multicomponent fuels during combustion, due to radiation absorption and increase in bulk heat conductivity [18]. Furthermore, no significant differentiation has been observed between the droplet temperature at different particle loadings, so long as nanomaterials are present. This points to an upper limit to the increase in radiation absorption and heat conductivity through addition of nanomaterials. In addition, many long-chain hydrocarbon-based crude oil constituents are expected to thermally decompose into lighter, smaller components at high temperatures as the combustion process progresses. As temperatures are higher in droplets with nanomaterials, more decomposition and lighter component evolution can be expected compared to pure crude droplets, leading to more flame speeds. However, the presence of nanomaterials on droplet surface hinders liquid evaporation, which leads to very non-linear and complex results at different particle loadings for different nanomaterials. As reported previously by Singh et al. [13], most of the combustion process of the pure Bakken crude oil is marked by the presence of microexplosions because of its highly multicomponent nature (see Figure 2 a-e). For Bakken crude, four distinct zones are present. Zone I is ignition delay, for the duration of which the droplet expands volumetrically from initial diameter 𝑑0 as it is heated. The end of Zone I is marked by a decrease in normalized droplet area, when the fuel in the droplet starts to evaporate and burn. This is the beginning of Zone II, which is marked by steady combustion. Because of high heat in the droplet, the various medium-to-high boiling fractions present in the fuel start to bubble and cause microexplosions, in a mechanism that has been detailed in the previous work of Singh et al. [13]. The zone with violent microexplosions is Zone III. Eventually, high-intensity microexplosions give way to low-intensity microexplosions with steady combustion, which is Zone IV. When AB or MWNT nanomaterials are added to the crude oil, another combustion zone is added after Zone IV, where the nanomaterial residue itself is observed to burn as a char. This is termed Zone V (see Figure 2 b-e). The more nanomaterial added, the more char residue left and the longer Zone V lasts. As nanomaterials are added, visual inspection shows that the microexplosions in Zone III decrease in duration and intensity. Acetylene black is more effective at decreasing microexplosions than MWNT, as shown in Figure 2 d (compare with Figure 2 a) and as previously reported by Singh et al. [18]. It is also observed that more AB leads to lesser microexplosions. The following sections discuss combustion properties such as combustion or burning rate, ignition delay, total combustion time, and flame stand-off ratio. 5 6 (a) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 2 ) 0 d / d ( 0 0 ZONE I ZONE II ZONE III ZONE IV Ignition Delay Steady Combustion Regime Violent Steady Combustion + Microexplosion Combustion Regime Low-intensity Microexplosion Combustion Regime Bakken pure 0.5 1 1.5 2 2 t/d0 7 (b) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 2 ) 0 d / d ( 0 0 ZONE I Ignition Delay ZONE II Steady Combus tion Regime ZONE III ZONE IV Violent Steady Combustion Microexplosion Combustion Regime + Low-intensity Microexplosion Combustion Regime ZONE V Char Combustion Regime Bakken 0.5% AB 0.5 1 1.5 2 2 t/d0 8 (c) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 2 ) 0 d / d ( 0 0 ZONE I ZONE II ZONE III ZONE IV Ignition Delay Steady Violent Steady Combustion + Combustion Microexplosion Regime Combustion Regime Low-intensity Microexplosion Combustion Regime ZONE V Char Combustion Regime Bakken 0.5% MWNT 0.5 1 1.5 2 2 t/d0 9 ZONE I ZONE II ZONE III ZONE IV Ignition Delay Steady Violent Steady Combustion Microexplosion Regime Combustion Regime Combustion + Low-intensity Microexplosion Combustion Regime ZONE V Char Combustion Regime (d) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 2 ) 0 d / d ( Bakken 2% AB 0 0 0.5 1 2 t/d0 1.5 2 10 ZONE I Ignition Delay ZONE II Steady Combust ion Regime ZONE III ZONE IV ZONE V Violent Steady Char Microexplosion Combustion Regime Combustion Regime Combustion + Low-intensity Microexplosion Combustion Regime (e) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 2 ) 0 d / d ( Bakken 2% MWNT 0 0 0.5 1 2 t/d0 1.5 2 11 2⁄ for (a) pure Bakken Figure 2. Evolution of normalized diameter (d d0⁄ )2 with normalized time t d0 crude oil, (db) Bakken crude oil with 0.5% AB w/w particle loading, (dc) Bakken crude oil with 0.5% MWNT w/w particle loading, (d) Bakken crude oil with 2% AB w/w particle loading, (e) Bakken crude oil with 2% w/w MWNT particle loading. Snapshots taken from CCD camera representing various zones are included. 3.1 Burning rate of fuel droplets As mentioned earlier, the fuel droplets being investigated went through many distinct combustion zones. Zone III (the violent microexplosion combustion regime) does not show a meaningful combustion trend, whereas Zone IV (the steady combustion + low intensity microexplosion regime) shows a much clearer and more meaningful trend. It also comprises a significant portion of the total combustion regime 12 in all experiments conducted. Zone IV was therefore selected for burning rate comparison across the board. Zone V, or char combustion, is not present for pure Bakken droplets; therefore, it was not considered for this analysis. Figure 3a-d and Figure 4a-d show normalized droplet area comparison for Zone IV between Bakken crude and Bakken crude at various particle loadings for single droplets of comparable sizes. The fuel droplet shrinks as it burns. The data from post-processing yields the change in droplet diameter 𝑑(𝑡) with time 𝑡 at 1000 frames/second. This data is reduced using the moving averages method to plot the combustion trend. The combustion trend in Zone IV follows the well-known 𝑑2 law [31-32] : 𝑑(𝑡)2 2 = 1 − 𝑘( 𝑑0 𝑡 2) 𝑑0 (1) where 𝑑0 is the initial droplet diameter and 𝑘 is the combustion or burning rate. The higher the 𝑘, the faster the duel droplet burns. (a) 1.86 1 0.9 0.8 0.7 2 ) 0 d / d ( 0.6 0.5 0.4 0.3 0.2 0.1 (t/d0 2) 1.96 2.06 Bakken pure, d0=0.904 mm Bakken pure, d0=0.904 mm regression Bakken 0.5% AB, d0=0.922 mm Bakken 0.5% AB, d0=0.922 mm regression 2.16 1 2 ) 0 d / d ( 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 2.1 2.2 2.3 2.4 (t/d0 2) 13 1.77 (t/d0 2) 1.87 Bakken pure, d0=0.904 mm Bakken pure, d0=0.904 mm regression Bakken 1% AB, d0=0.928 mm Bakken 1% AB, d0=0.928 mm regression 2.2 1.5 (t/d0 2) (t/d0 2) 2.3 1.6 Bakken pure, d0=0.904 mm Bakken pure, d0=0.904 mm regression Bakken 2% AB, d0=0.914 mm Bakken 2% AB, d0=0.914 mm regression 2.1 2.2 2.3 2.4 (t/d0 2) (b) 1.67 1 2 ) 0 d / d ( 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 (c) 2.1 1.4 1 2 ) 0 d / d ( 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.97 1 2 ) 0 d / d ( 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 2.4 1.7 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 2 ) 0 d / d ( 14 1.32 (t/d0 2) 1.42 Bakken pure, d0=0.904 mm Bakken pure, d0=0.904 mm regression Bakken 3% AB, d0=0.930 mm Bakken 3% AB, d0=0.930 mm regression (d) 1.22 1 2 ) 0 d / d ( 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1.52 1 2 ) 0 d / d ( 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 2.1 2.2 2.3 2.4 Figure 3. Zone IV comparison between Bakken crude and Bakken crude at different AB particle loadings. For single droplets of comparable sizes, moving average data comparison for normalized droplet area and trendlines are shown. (t/d0 2) 15 (a) 1.89 1.99 (t/d0 2) 2.09 2.19 0.8 0.7 0.6 2 ) 0 d / d ( 0.5 0.4 0.3 0.2 0.1 (b) 2.1 1.45 Bakken pure, d0=0.904 mm Bakken pure, d0=0.904 mm regression Bakken 0.5% MWNT, d0=0.910 mm Bakken 0.5% MWNT, d0=0.910 mm regression 0.8 0.7 0.6 0.5 0.4 2 ) 0 d / d ( 0.3 0.2 0.1 2.2 1.55 (t/d0 2) (t/d0 2) 2.3 1.65 2.4 1.75 Bakken pure, d0=0.904 mm Bakken pure, d0=0.904 mm regression Bakken 1% MWNT, d0=0.909 mm Bakken 1% MWNT, d0=0.909 mm regression 2.1 2.2 2.3 2.4 (t/d0 2) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 2 ) 0 d / d ( 16 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 2 ) 0 d / d ( (c) 1.53 1.63 (t/d0 2) 1.73 1.83 0.8 0.7 0.6 0.5 0.4 2 ) 0 d / d ( 2.4 1.7 0.3 0.2 0.1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 2 ) 0 d / d ( 17 0.8 0.7 0.6 2 ) 0 d / d ( 0.5 0.4 0.3 0.2 0.1 (d) 2.1 1.4 2 ) 0 d / d ( 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Bakken pure, d0=0.904 mm Bakken pure, d0=0.904 mm regression Bakken 2% MWNT, d0=0.914 mm Bakken 2% MWNT, d0=0.914 mm regression 2.2 1.5 (t/d0 2) (t/d0 2) 2.3 1.6 Bakken pure, d0=0.904 mm Bakken pure, d0=0.904 mm regression Bakken 3% MWNT, d0=0.894 mm Bakken 3% MWNT, d0=0.894 mm regression 2.1 2.2 2.3 2.4 (t/d0 2) Figure 4. Zone IV comparison between Bakken crude and Bakken crude at different MWNT particle loadings. For single droplets of comparable sizes, moving average data comparison for normalized droplet area and trendlines are shown. Figure 5 shows the average burning rate comparison of Bakken crude at different nanomaterial loadings. Five experiments were conducted to determine the average ignition delay for all fuels. The error bars show the standard deviations of each set of experiments. As shown in this figure, a general increase in combustion rates is observed as both AB and MWNT are added. (a) (b) 1.050 0.950 0.850 0.750 0.650 0.550 0.450 0.350 0.250 0.95 0.85 0.75 0.65 0.55 0.45 0.35 0.25 ) 1 - s 2 m m ( e t a r g n i n r u B ) 1 - s 2 m m ( e t a r g n i n r u B -0.5 0 0.5 1 1.5 2 2.5 3 3.5 Acetylene Black Concentration (% w/w) -0.5 0 0.5 1 1.5 2 2.5 3 3.5 MWNT Concentration (% w/w) Figure 5. Comparison of the burning rates of Bakken crude with different mass concentrations of (a) AB and (b) MWNT. 18 Many physical and chemical properties determine the combustion rate of a burning liquid droplet, such as heat conductivity, radiation absorption, vapor pressure, and chemical composition. The greater the heat conductivity and radiation absorption of the droplet, the faster the combustion rate. The higher the vapor pressure, greater the vapor release rate and the higher the combustion rate. The addition of nanoparticles decreases vapor pressure but increases heat conductivity and radiation absorption, so complex results are possible from varying the particle loading in the liquid fuel. Figure 6 shows the change in average burning rate for Bakken crude at different particle loadings of AB and MWNT. The most significant change is seen at 0.5% w/w particle loading for both AB and MWNT, where 39.5% and 31.1% combustion rate enhancements were observed for these nanomaterials, respectively. Acetylene black shows an almost 20% combustion rate enhancement at 2% and 3% particle loading, which is also significant, and MWNT shows an enhancement of 19.6% at 1% particle loading and 26.6% at 2% particle loading. (a) (b) e g n a h c e t a r g n i n r u b e g a r e v A % e g n a h c e t a r g n i n r u b e g a r e v A % 45.0 40.0 35.0 30.0 25.0 20.0 15.0 10.0 5.0 0.0 44.0 39.0 34.0 29.0 24.0 19.0 14.0 9.0 4.0 -1.0 0.5 1 2 3 Acetylene Black Concentration (% w/w) 0.5 1 2 3 MWNT Concentration (% w/w) Figure 6. Change in average combustion rate of Bakken crude oil at different particle loadings of (a) AB and (b) MWNT. 19 3.2 Ignition delay time Ignition delay is a parameter governed by many physical processes. In this experiment, the droplet is surrounded by hot coils and continuously heated until it starts to release enough vapor from its surface to catch fire and release heat in a flame. The flame in turn heats the droplet as the hot coils withdraw and keeps the combustion process going. The delay between the coils starting to heat the droplet and the droplet showing a visible flame is termed ignition delay. It depends mainly on how fast the droplet heats up (heat conductivity) and how fast it releases vapor (vapor pressure). The lesser the heat conductivity, the more the ignition delay, and the lesser the vapor pressure, the more the ignition delay. (a) (b) ) s m ( y a l e d n o i t i n g I ) s m ( y a l e d n o i t i n g I 500 450 400 350 300 250 500 450 400 350 300 250 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 Acetylene Black Concentration (% w/w) -0.5 0 0.5 1 1.5 2 2.5 3 3.5 MWNT Concentration (% w/w) Figure 7. Comparison of the ignition delay times of Bakken crude with different mass concentrations of (a) AB and (b) MWNT. Each data point represents an average of six repetitions, and the error bars show the corresponding standard deviation. Both AB [18] and MWNT [15] show an increased heat conductivity in hydrocarbon-based liquid fuels. Section 3.4 shows that they also decrease vapor pressure. Figure 7 presents a comparison of the average ignition delay of pure Bakken crude with Bakken crude at different nanomaterial loadings. Six 20 experiments were conducted to determine the average ignition delay for all fuels. The error bars show the standard deviations. In all cases, there is an increase in the ignition delay time for Bakken crude as AB and MWNT are added. Note that the error bar for pure Bakken crude is larger than any of its colloidal suspensions. This can be attributed to the presence of nanomaterials in the liquid bulk, which forms a highly porous and interconnected aggregate inside the burning droplet and causes regularization for the diffusion and evaporation processes at the droplet surface. (a) 16.0 e g n a h c y a l e d n o i t i n g i e g a r e v A % 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 e g n a h c y a l e d n o i t i n g i e g a r e v A % 14.0 13.5 13.0 12.5 12.0 11.5 11.0 10.5 10.0 (b) 0.5 1 2 3 Acetylene Black Concentration (% w/w) 0.5 1 2 3 MWNT Concentration (% w/w) Figure 8. Change in average ignition delay time for Bakken crude oil at different particle loadings of (a) AB and (b) MWNT. The largest changes are seen at 0.5% w/w particle loadings for both types of nanoparticles. Figure 8 shows the change in average ignition delay for Bakken crude at different particle loadings of AB and MWNT. The largest increase in ignition delay occurs at 0.5% w/w particle loading for AB and 1% w/w particle loading for MWNT. This points to a substantial decrease in vapor pressure without much corresponding increase in heat conductivity at these particle loadings. For AB, the ignition delay increase is smaller at 1% particle loading, meaning the decrease in vapor pressure is counteracted by the increase in heat conductivity. The increase in heat conductivity is more pronounced at 2% AB particle loading 21 with an increase in ignition delay than at 1% AB. However, for both AB an MWNT, the ignition delay is lower at 3% particle loading than at 2%, which points to a greater decrease in vapor pressure than can be counteracted by an increase in heat conductivity. 3.3 Total combustion time Figure 9 shows the average total combustion time comparison of Bakken crude at different nanomaterial loadings. Six experiments were conducted to determine the average ignition delay for all fuels. The error bars show the standard deviations. It is observed that acetylene black has a significant effect on the total combustion time of Bakken crude, but MWNT does not produce any significant effect of the same magnitude. (a) (b) ) s m ( e m i t n o i t s u b m o c l a t o t e g a r e v A ) s m ( e m i t n o i t s u b m o c l a t o t e g a r e v A 1600 1500 1400 1300 1200 1100 1000 1600 1500 1400 1300 1200 1100 1000 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 Acetylene Black Concentration (% w/w) -0.5 0 0.5 1 1.5 2 2.5 3 3.5 MWNT Concentration (% w/w) Figure 9. Comparison of the total combustion times of Bakken crude with different mass concentrations of (a) AB and (b) MWNT. Each data point represents an average of five repetitions, and the error bars show the corresponding standard deviation. 22 Figure 10 shows the change in average total combustion time for Bakken crude at different particle loadings of AB and MWNT. The general trend is an increase in the average total combustion time for Bakken crude as AB particle loading is increased. This is counterintuitive, as there is an increase in combustion rate for Bakken crude as AB is added (Section 3.1). The explanation lies in the decrease in microexplosion intensity for liquid fuels as AB is added, which has previously been reported in the literature [18]. This leads to less liquid fuel being lost during the droplet fragmentation that occurs during a microexplosion event, which results in a greater total combustion time. The maximum increase is 7.9% at 3% AB particle loading. Since MWNT does not have the same effect as AB on controlling microexplosions, the change in total combustion time is marginal for Bakken crude loaded with MWNT: the maximum increase is 1.8% at 3% particle loading, and the maximum decrease is 2% at 1% particle loading. e g n a h c e m i t n o i t s u b m o c l a t o t e g a r e v A % 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 (a) 0.5 1 2 3 Acetylene Black Concentration (% w/w) 23 (b) e g n a h c e m i t n o i t s u b m o c l a t o t e g a r e v A % 5.0 4.0 3.0 2.0 1.0 0.0 -1.0 -2.0 -3.0 0.5 1 2 3 MWNT Concentration (% w/w) Figure 10. Change in average total combustion time for Bakken crude oil at different particle loadings of (a) AB and (b) MWNT. 3.4 Flame stand-off ratio Flame stand-off ratio (FSR), defined as the ratio of flame diameter 𝑑𝑓 to droplet diameter 𝑑𝑑, is an important parameter when comparing the combustion processes of different fuels. The regular experimentation process requires a bright backlight to obtain a sharp image of the droplet, which drowns out the flame. Therefore, this experiment was performed in low-light conditions with high exposure settings and the backlight at low power. This allowed a sharp capture of both the droplet and the flame with the CCD camera. Figure 11 shows a low-light image of a burning Bakken + 0.5% AB fuel droplet, where the flame structure is visible. 24 Figure 11. Low-light image of Bakken crude oil with 0.5% w/w AB particle loading showing the burning fuel droplet and its flame structure. The FSR allows for a better understanding of the surface phenomena. There are two competing phenomena that dictate the size of flame diameter 𝑑𝑓 compared to droplet diameter 𝑑𝑑: thermophoretic flux, which pushes the flame towards the droplet due to the temperature gradient, and the Stefan flux, which pushes the flame away from the droplet because of fuel evaporation from the droplet. Therefore, a fuel with a lower evaporation rate (and lower vapor pressure) will have a lower Stefan flux and, consequently, a lower 𝑑𝑓, leading to a higher FSR. Figure 12 shows the FSR comparison between pure Bakken crude and its colloidal suspensions at different particle loadings. Note that the FSR for the crude with nanomaterial loading is generally lower than for pure crude, meaning that the nanomaterial present at the droplet surface hinders liquid fuel evaporation, which leads to a lower Stefan flux. Therefore, the addition of nanomaterials to a liquid fuel causes its vapor pressure to drop. This also explains the general increase in ignition delay of Bakken crude as it is loaded with nanomaterials: it takes longer for the critical amount of vapor to accumulate around the droplet to start a self-sustaining combustion regime. This behavior may seem at odds with the higher observed combustion rate with nanomaterial addition. It can be explained by the thermal decomposition of fuel constituents due to disproportionately increased droplet temperature when nanomaterials are added. Thermal decomposition leads to long-chain components breaking down into lighter components, which counter the effect of decreased vapor pressure by increasing flame speed and increasing combustion rates, but not enough to overcome the decreased Stefan flux, which leads to a lower FSR for droplets with added nanomaterials. Bakken pure Bakken 0.5% AB Bakken pure Bakken 0.5% MWNT 4.5 4 3.5 3 2.5 ) - ( o i t a r f f o - d n a t s e m a l F 0.5 Time (s) 1 0 0.5 Time (s) Bakken pure Bakken 1% AB Bakken pure Bakken 1% MWNT (II a) 4.5 4 3.5 3 2.5 ) - ( o i t a r f f o - d n a t s e m a l F 0.5 Time (s) 1 0 (II b) 0.5 Time (s) 4.5 4 3.5 3 2.5 ) - ( o i t a r f f o - d n a t s e m a l F (I a) 4.5 4 3.5 3 2.5 ) - ( o i t a r f f o - d n a t s e m a l F (I b) 0 0 1 1 25 4.5 4 3.5 3 2.5 ) - ( o i t a r f f o - d n a t s e m a l F (I c) ) - ( o i t a r f f o - d n a t s e m a l F 4.5 4 3.5 3 2.5 0 0 Bakken pure Bakken 2% AB Bakken pure Bakken 2% MWNT 4.5 4 3.5 3 2.5 ) - ( o i t a r f f o - d n a t s e m a l F 0.5 Time (s) 1 0 0.5 Time (s) Bakken pure Bakken 3% AB Bakken pure Bakken 3% MWNT (II c) 4.5 4 3.5 3 2.5 ) - ( o i t a r f f o - d n a t s e m a l F 0.5 Time (s) 1 0 0.5 Time (s) 1 1 (I d) Figure 12. Comparison of flame stand-off ratios (FSR) for Bakken crude oil at (a) 0.5%, (b) 1%, (c) 2%, and (d) 3% w/w particle loadings of AB (I) and MNWT (II). (II d) 4. Conclusions An experimental investigation of the combustion and flame properties of Bakken crude and its colloidal suspensions with acetylene black (AB) and multi-walled carbon nanotubes (MWNT) at 0.5%, 1%, 2%, and 3% w/w particle loadings was carried out. Sub-millimeter spherical droplets of the fuel of interest were burned to completion, with the process being recorded by CCD and CMOS cameras. The resulting images were post-processed with ImageJ and MATLAB to obtain various parameters such as burning rate, ignition delay, total combustion time, and flame stand-off ratio. Significant changes in all Bakken crude combustion parameters were observed when nanomaterials were added to the crude. • It was found that the addition of AB and MWNT caused an increase in the bulk heat conductivity and radiation absorption of Bakken crude, but a decrease in its vapor pressure. • Very low amounts of nanomaterials (0.5% w/w) are required to achieve a significant increase in combustion rates for crude. • Due to increased heat conductivity and radiation absorption, a maximum of 39.5% and 31.1% combustion rate enhancement was observed at particle loading of 0.5% w/w AB nanoparticles and 0.5% w/w MWNT, respectively. • Due to decreased vapor pressure, a maximum of 14.5% and 13.8% average ignition delay increase was noted at particle loadings of 0.5% w/w AB and 1.0% w/w MWNT, respectively. 26 • Furthermore, a maximum of 9.2% and 1.8% average total combustion time increase was noted at particle loadings of 3% w/w AB and 3% w/w MWNT, respectively. Various combustion properties, such as combustion rate, are expected to be used in future work to validate the numerical modeling for multi-component, multi-phase fuels with nano-additives. It is expected that this work will stimulate more interest in the addition of AB and MWNT nanoparticles to oil spills to increase ISB effectiveness. Acknowledgements This research is funded, in part, by the Mid-America Transportation Center via a grant from the U.S. Department of Transportation's University Transportation Centers Program, and this support is gratefully acknowledged. The USDOT UTC grant number for MATC is 69A3551747107. The authors would also like to acknowledge use of the University of Iowa High Resolution Mass Spectrometry Facility (HRMSF). We would especially like to thank Prof. Lynn M. Teesch and Mr. Vic R. Parcell for their help and support with the GC-MS data. 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Gas Chromatography -- Mass Spectrometry (GC-MS) data for Bakken crude oil GC-MS data was generated at the High Resolution Mass Spectrometry Facility (HRMSF) located at the University of Iowa Department of Chemistry (Figure ). The column used was a 30 m DB-5MS, 0.25mm diameter and 0.25 micrometer film thickness. The temperature ramp started at 50 ⁰C and held for 1 min. It was then increased at 10 ⁰C/min until 320 ⁰C and then held for 5 min. The numbers on top of the peaks in the chromatogram are retention time, area, and response height. The results reveal a liquid rich in low- and medium-boiling components. 29 Figure A1. Gas Chromatography -- Mass Spectrometry (GC-MS) data for Bakken crude oil. 30
1705.01994	1	1705	2017-05-02T16:38:44	Medical applications of diamond magnetometry: commercial viability	[ "physics.app-ph", "cond-mat.mtrl-sci", "physics.ins-det", "physics.med-ph", "quant-ph" ]	The sensing of magnetic fields has important applications in medicine, particularly to the sensing of signals in the heart and brain. The fields associated with biomagnetism are exceptionally weak, being many orders of magnitude smaller than the Earth's magnetic field. To measure them requires that we use the most sensitive detection techniques, however, to be commercially viable this must be done at an affordable cost. The current state of the art uses costly SQUID magnetometers, although they will likely be superseded by less costly, but otherwise limited, alkali vapour magnetometers. Here, we discuss the application of diamond magnetometers to medical applications. Diamond magnetometers are robust, solid state devices that work in a broad range of environments, with the potential for sensitivity comparable to the leading technologies.	physics.app-ph	physics	Medical applications of diamond magnetometry: commercial viability Matthew W. Dale and Gavin W. Morley Department of Physics, University of Warwick May 8, 2017 The sensing of magnetic fields has important applications in medicine, par- ticularly to the sensing of signals in the heart and brain. The fields associated with biomagnetism are exceptionally weak, being many orders of magnitude smaller than the Earth's magnetic field. To measure them requires that we use the most sensitive detection techniques, however, to be commercially vi- able this must be done at an affordable cost. The current state of the art uses costly SQUID magnetometers, although they will likely be superseded by less costly, but otherwise limited, alkali vapour magnetometers. Here, we discuss the application of diamond magnetometers to medical applications. Diamond magnetometers are robust, solid state devices that work in a broad range of environments, with the potential for sensitivity comparable to the leading technologies. 1 Introduction A magnetometer is a device that senses a magnetic field, measuring its strength and sometimes direction too. There are many different applications of magnetometry such as navigation and geo-surveying, but the one we focus on here is the measurement of medical biomagnetism, and specifically the magnetic fields produced by the heart. 1.1 Magnetocardiography The cardiac cycle is initiated by an electrical impulse from the sinoatrial node, which then propagates through the heart. The electrical activity passes through specialised pathways, controlling the timing of the contraction of the tissue. The measurement of magnetic fields created by the heart is called magnetocardiography (MCG), and provides 1 7 1 0 2 y a M 2 ] h p - p p a . s c i s y h p [ 1 v 4 9 9 1 0 . 5 0 7 1 : v i X r a similar information to electrocardiography (ECG) which is widely used in hospitals. Sev- eral reviews of MCG are available, demonstrating that this technique provides diagnos- tic information additional to ECG for coronary artery disease and cardiac arrhythmias [1, 2, 3]. The MCG that has been carried out to date has used SQUID (superconducting quantum interference device) sensors at cryogenic temperatures. For this it is necessary to record magnetic fields with a sensitivity of 50 fT Hz−1/2 or better with a temporal resolution of around 10 ms. The frequency range from DC to 50 Hz is the most useful di- agnostically, and frequencies from 50 Hz to 250 Hz are also useful. Existing SQUID-based MCG achieves sensitivity of better than 10 fT Hz−1/2 in a shielded room, or 40 fT Hz−1/2 in an unshielded room [2]. The installation of magnetically shielded rooms is expensive (up to $1M with multiple shielding layers) and inconvenient for hospitals and the need for this would hamper attempts to bring MCG into common use. Existing SQUID-based shielded MCG systems cost around $1M, but the next generation using diamond or al- kali vapour cells should sell for significantly less due to the partial or total elimination of shielding and the costs related to cryogenics. Currently the non-industrialised cost for making SQUID sensors is about $1k. The cost of new magnetic sensors will have to be competitive with SQUID sensors following industrialisation of the manufacturing processes. Detecting the smaller magnetic fields from human brains is also of interest, and this is called magnetoencephalography (MEG). 1.2 Underlying physics of the negative nitrogen-vacancy centre in diamond Diamond is a remarkable material being best in class for many properties; it has excellent thermal conductivity, hardness and wide transparency to electromagnetic radiation to name a few. In recent years another application of diamond has emerged and that is as a sensor, owing to some unique properties of impurities that can be incorporated into the carbon lattice. The band-gap of diamond is 5.5 eV, making it transparent to all visible light and into the UV, however impurities, or colour centres as they are called, introduce energy levels into the band-gap. Transitions involving these energy levels allow absorption and emission of visible light giving a diamond its colour. The most common colour centre in diamond is substitutional nitrogen, as it is abundant in the atmosphere and easily fits into the diamond lattice. Another is the vacancy, which may be incorporated during crystal growth as an imperfection, or introduced post growth by irradiation with high energy particles. If a vacancy becomes trapped adjacent to a substitutional nitrogen the nitrogen vacancy centre (NV) is formed, a model of which is shown in Figure 1. A substitutional nitrogen centre can donate an electron to NV to make it negatively charged (NV−). It is the NV− centre which has some special properties and as such has been the subject of a considerable body of research. It is photostable and exhibits red photoluminescence that can be detected from a single centre [4]. The ground state has an unpaired electron spin that can be polarised optically with very high efficiency [5]. The same mechanism that is responsible for the polarization also reduces the luminescence intensity of the unpolarised states by up to 30 %. These properties allow the optical detection of the 2 Figure 1: The nitrogen vacancy centre in diamond in its four orientations in the crystal lattice. The nitrogen atom is blue and the three carbon atoms surrounding the vacancy have been highlighted. 3 spin of a single NV− centre and consequently optically detected magnetic resonance (ODMR). An excellent review is given by Doherty et al. of the physics of the NV− centre [6]. A magnetic field splits the electron spin states, moving the position of the electron spin resonances, which can be read by ODMR. The accuracy of the field measurement is partly determined by the width of the resonance, which is primarily determined by the spin coherence lifetime. Diamond exhibits the longest coherence at room temperature of any solid state system [7, 8]. The long coherence times stem from several properties of diamond. Firstly, the spin- lattice relaxation is small because of the weak spin-orbit interaction and strong covalent bonding of diamond. Secondly, decoherence due to interaction with other spins is mini- mal. At natural isotopic abundance diamond is 98.9 % nuclear-spin free 12C. In addition, there are few electron spins other than the NV− centres we are interested in. The co- herence times can be improved by engineering the diamond to remove parasitic defects [9], and enrichment with 12C [8]. The NV− centre has trigonal symmetry meaning that there are four possible orienta- tions in which the N-V axis can sit in the diamond lattice; these are shown relative to each other in Figure 1. The resonance frequency depends not only on the magnitude of the magnetic field, but also on the angle between the field and the N-V axis. Measuring the resonances from three or four sites of the NV− centre allows vector measurements of the magnetic field. 1.3 Nitrogen-vacancy sensitivity A review of NV− magnetometry in the period up 2014 is available [10]. We should focus on demonstrated sensitivities rather than projected values. For bulk experiments, the best broadband sensitivity is 15 pT Hz−1/2, from a diamond at room temperature with volume 13 × 200 × 2000 µm3 for magnetic fields at frequencies from 80 Hz to 2000 Hz [11]. In a different experiment, using AC measurements instead of broadband (pulsed magnetic resonance instead of continuous-wave), the sensitivity to magnetic field at a particular frequency is higher, reaching 0.9 pT Hz−1/2 for a 20 kHz magnetic field with a bulk diamond [12]. It has been proposed that using NV− centres as a laser medium could provide sig- nificant further gains in sensitivity. By using the field dependence of the fluorescence to push the laser above threshold, contrast would be greatly increased. A so-called laser threshold magnetometer (LTM) based on NV− is predicted to achieve a shot-noise limited DC sensitivity of 2 fT Hz−1/2 [13]. 1.4 Current intellectual property holders There are a number of patents relating to diamond magnetometry, and in particular recently published by Lockheed Martin. Lockheed Martin patents cover vector magne- tometry using ensembles of NV− centres and a CW frequency swept experiment using a bias field to separate the spectrum [14]; a magnetometer using ensembles of NV− cen- 4 tres with magnetic field detection by pulsed ODMR using an optimised Ramsey pulse sequence [15]; a method for determining the orientations of NV centres to calibrate the NV magnetometer [16]; using parabolic or ellipsoidal reflectors to improve collec- tion efficiency of luminescence and increasing sensitivity by resolving nitrogen hyperfine resonances [17]; and mico sized NV magnetometers [18]. Sensitivity to magnetic field can be increased by making improvements to the diamond material. Element Six have a number of relevant patents in this area, in particular a patent targeted at producing diamond for spintronic applications [19]. The patent de- scribes techniques for the growth of diamond by CVD with a low number of paramagnetic centres and 12C isotopic enrichment. A patent from Harvard describes improving the sensitivity of pulsed magnetometers by dynamical decoupling of electron spins from spin-spin interactions and interactions with the lattice [20]. 2 Existing technologies There is a large array of technologies for magnetic field detection. Presently the most sen- sitive and applicable to MCG or MEG are the well-established superconducting quantum interference devices (SQUIDs) and atomic vapour cells made with alkali metals. Each of these technologies will be discussed in more detail here along with their strengths and weaknesses. 2.1 SQUIDs Since the first reports of the Josephson effect [21] and SQUID magnetometry over 50 years ago [22] they have been the subject of extensive research, driven in part by their potential application to MEG [23]. SQUIDs are one of the most sensitive magnetometers with typical sensitivities near 1 fT Hz−1/2 and a sensitivity of 0.5 fT Hz−1/2 at 1 kHz reported [24]. Current commercial MEG systems use arrays of SQUID magnetometers. SQUIDs consist of a superconducting ring with one (RF SQUID) or more (DC SQUID) Josephson junctions. A small current less than a critical current can flow across the junction without creating a voltage. Because of flux quantisation, as the flux passing through the superconducting ring increases or decreases, the current flowing around it oscillates. When a bias current is applied this creates an oscillating voltage which can be read with conventional semiconductor electronics. The number of oscillations corresponds to the change in magnetic field. The greatest limitation of SQUIDs is the requirement of cryogenic temperatures for operation. This increases cost and complexity and also reduces the sensitivity of a device since it must be some distance from the source of the fields being measured. In MEG the typical minimum distance between the SQUID sensor and brain is 30 mm [23]. The distance can be decreased to increase SNR at the expense of helium boil- off. Furthermore, in current designs the sensors and Dewar are fixed meaning it is not optimised to head size, reducing sensor proximity. 5 SQUIDs have been demonstrated using high TC superconductors, with a sensitivity of 4 fT Hz−1/2, allowing the use of nitrogen as a cryogen and closer sensor proximity [25], however there are significant challenges in their fabrication. 2.2 Alkali metal magnetometer In the last decade the sensitivity of SQUID magnetometers has been challenged by atomic magnetometers (AM) using alkali metal vapours, which have the potential to replace SQUIDs in biomedical applications [26]. Such AMs detect the Faraday rotation [27] or absorption [28] of light through a spin polarised vapour of potassium, rubidium or caesium. Their operation does not require the cryogenic cooling with helium required by SQUIDs, significantly reducing the complexity and cost of a device. The sensitivity of an alkali-metal magnetometer is limited by spin relaxation time, to which the dominant contribution is spin-exchange collisions. For high density vapours and very low magnetic fields, the atoms can exchange spin much faster than the magnetic precession frequency. This is known as the spin-exchange relaxation free (SERF) regime [29], and allows sub ft Hz−1/2 sensitivities. Sensitivities such as 160 aT Hz−1/2 with a measurement volume of 0.45 cm3 have been reported [30]. 3 Market There are around 100 SQUID MEG systems installed worldwide, at a cost of over $1M each. The MCG market should be much larger if the instrumentation was affordable and portable, because MCG has been shown to be superior to ECG and hence other non-invasive approaches for the diagnosis of coronary artery disease (CAD) [1, 2, 3]. CAD is the most common type of heart disease and is the leading cause of death in the United States in both men and women. Several companies have tried and failed to commercialize SQUID-based MCG, held back by the cost of a cryogen-based system. We estimate that 100,000 MCG systems could be sold if the functionality were the same as existing SQUID systems and the price was below $150k. This is based on there being over 100,000 hospitals in China, India, the EU, Japan and the USA. Diamond magnetometers are at technology readiness level (TRL) 7: the technology has been demonstrated and is moving towards being put on sale. However, this has not yet reached the sensitivity needed for MCG, so an MCG system based on diamond is at TRL 4-5 (technology development). 4 Outlook Although established SQUID sensors have the necessary sensitivity for MCG and MEG, the requirement for cryogenic cooling with helium makes them ultimately too expensive for widespread commercial applications. In addition, the need for the sensors to be in a Dewar limits how close they can be positioned to the subject. 6 Alkali metal vapour magnetometers offer the significant advantage over SQUID mag- netometers of removing the need for cryogenic cooling. They do require heating, but this is much less challenging and restrictive. The most sensitive alkali metal vapour cells, operating in the SERF regime, however require being in very low field environments ne- cessitating the use of magnetically shielded rooms. The background magnetic noise must be significantly reduced for all highly sensitive magnetometers, and this can be achieved to a reasonable degree by subtracting the signal from additional sensors slightly removed from the subject, however a magnetically shielded environment is still a requirement for SERF magnetometers. Whilst it is true that the sensitivity of diamond NV− magnetometers is presently several orders of magnitude worse than the state of the art SQUID or alkali metal mag- netometers, the aforementioned technologies have been in development for significantly longer. As such it is very likely that through optimising diamond material, sensor config- uration, and detection methodology (for example a pulsed microwave experiment rather than frequency swept), orders of magnitude improvements can be made. Even if NV− magnetometers do not ultimately exceed others in sensitivity they might offer significant advantages in ruggedness, cost, and proximity to the subject. A large part of the cost for both alkali metal and NV− magnetometers is the laser ex- citation. For alkali metal magnetometers, atomic transitions are excited, requiring finely tuned and stabilised lasers. The NV− transition which is excited is significantly broad- ened by coupling to phonons in the lattice, effectively allowing broadband illumination. With LED technology constantly improving, single colour LEDs are now available with powers of hundreds of milliwatts. The use of LED illumination rather than laser has the potential to dramatically reduce the cost of a device. A challenge with NV− magnetometers is that the signal is contained in luminescence from the diamond. Luminescence radiates in all directions making its collection difficult (this is not a problem with alkali metal magnetometers since they detect laser light transmitted though the vapour cell). However the use of ellipsoidal reflectors is discussed in a Lockheed Martin patent [17], where it is stated that with correct implementation, near 100 % collection should be possible. A nice design would be the use of an ellipsoidal reflector coupled to a fibre, such that all light transmitted through the fibre is focussed on the diamond, and all luminescence from the diamond is coupled in to the fibre. 5 Acknowledgements We have benefited from useful discussions with Peter Hofer (Bruker), Paul Mawson (Texas Instruments), Riccardo Fenici (BACPIC), Donatella Brisinda (BACPIC), Ian Fisher and Tim LeClair. References [1] Joey S W Kwong, Boris Leithauser, Jai-Wun Park, and Cheuk-Man Yu. Diagnostic value of magnetocardiography in coronary artery disease and cardiac arrhythmias: 7 a review of clinical data. International Journal of Cardiology, 167(5):1835–42, 2013. [2] R. Fenici, D. Brisinda, A. Venuti, and A.R. Sorbo. Thirty years of clinical mag- netocardiography at the Catholic University of Rome: Diagnostic value and new perspectives for the treatment of cardiac arrhythmias. International Journal of Cardiology, 168(5):5113–5115, 2013. 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1911.12191	1	1911	2019-11-27T14:48:06	Study of RF Sputtered Antimony Alloyed Bismuth Vanadium Oxide (Sb:BiVO4) Thin Films for Enhanced Photoelectrochemical (PEC) performance from Bandgap Modulation to Thickness Optimization	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	Monoclinic scheelite bismuth vanadate (BiVO4) is a promising photoanode for water splitting yet the PEC performance is limited due to its relatively higher (2.4 eV) band gap. Here, we successfully decreased its the band gap to 1.72 eV by controlled antimony alloying. Low bandgap antimony alloyed bismuth vanadium oxide (Sb:BiVO4) thin film was prepared by RF sputtering of high purity homemade target, fabricated by solid-state reaction using a mixture of Sb2O3, Bi2O3, and V2O5 powders with desired stoichiometric ratios. Several growth parameters, powder crystallography, post-deposition effects, and surface treatments, thickness dependence, effect of electrolytes on photocorrosion were studied along with its optical and electrochemical characterization. We discovered that Sb:BiVO4 is a direct band gap material in the visible light range (1.72 eV) and a valence band position suitable for driving water oxidation reaction under illumination. Furthermore, hole diffusion length is increased with antimony alloying and achieved optimum thickness of 400 nm for higher photocurrent. The controllably prepared Sb:BiVO4 particles are having the sizes of 10-15 nm in room temperature deposition and can be grown up to 0.5 microns under air annealing.	physics.app-ph	physics	Study of RF Sputtered Antimony Alloyed Bismuth Vanadium Oxide (Sb:BiVO4) Thin Films for Enhanced Photoelectrochemical (PEC) performance from Bandgap Modulation to Thickness Optimization. Tilak Poudel, Yanfa Yan, Xunming Deng Abstract Monoclinic scheelite bismuth vanadate (BiVO4) is a promising photoanode for water splitting yet the PEC performance is limited due to its relatively higher (2.4 eV) band gap. Here, we successfully decreased its the band gap to 1.72 eV by controlled antimony alloying. Low bandgap antimony alloyed bismuth vanadium oxide (Sb:BiVO4) thin film was prepared by RF sputtering of high purity homemade target, fabricated by solid-state reaction using a mixture of Sb2O3, Bi2O3, and V2O5 powders with desired stoichiometric ratios. Several growth parameters, powder crystallography, post-deposition effects, and surface treatments, thickness dependence, effect of electrolytes on photocorrosion were studied along with its optical and electrochemical characterization. We discovered that Sb:BiVO4 is a direct band gap material in the visible light range (1.72 eV) and a valence band position suitable for driving water oxidation reaction under illumination. Furthermore, hole diffusion length is increased with antimony alloying and achieved optimum thickness of 400 nm for higher photocurrent. The controllably prepared Sb:BiVO4 particles are having the sizes of 10-15 nm in room temperature deposition and can be grown up to 0.5 microns under air annealing. Introduction The increasing global awareness concerning carbon emissions and the exploitation of fossil fuel reserves motivates the development of technology based on alternative energy sources [1]. With 173,000 TW of solar energy striking the surface of the earth at any given moment, the challenge is to convert sunlight into useable form of energy. Solar Photovoltaic (PV) cells normally generate electricity using sunlight but due to the variability of daily solar irradiance, harvesting sunlight into a storable chemical energy has been considered an essentially sustainable pathway to mitigate world's energy crisis [2] [3] [4]. This chemical energy could be in the form of hydrogen, which has highest energy density per mass of 142 MJ/Kg [5]. Hydrogen has the potential to be a sustainable carbon-free fuel, but it is not available as a primary source in nature [6]. Nevertheless, it can be produced from renewable sources (water and sunlight) and converted into electricity at relatively high efficiency with environment friendly end products. The direct photoelectrolysis of water was first achieved by Fujishima and Honda in 1972 with TiO2, a large band gap semiconductor photoelectrode [7]. However, owing to its larger band gap only a limited portion of solar spectrum can be used. Most of the binary oxide semiconductors (e.g. Fe2O3, WO3, TiO2, SnO2, ZnO, CoOx) available for water splitting have a large energy band gap or not too many ternary oxides have the band edge potentials suitable for oxygen and hydrogen evolution [8] [9]. Bismuth vanadate (BiVO4) semiconductor materials have been extensively studied as a promising photoanodes for photoelectrochemical water splitting due to its relatively narrow band gap of 2.4 eV, favorable band structure, earth abundance, low toxicity, chemical stability, long hole diffusion length, and substantial visible light absorption [10] [11]. Many synthesis strategies including precipitation reactions [12] [13], hydrothermal synthesis [14] [15] [16], sol-gel methods [17] [18] have been reported for the preparation of BiVO4 powders. As a drawback, bismuth vanadate semiconductor has a conduction band edge positioned at an energy level inferior of the reversible hydrogen potential. The major performance bottleneck is poor separation of the photoexcited electron -- hole pairs due to the extremely low carrier mobility (∼10−2 cm2 V−1 s−1), which results in significant carrier recombination losses [19] [20] [21]. Consequently, bismuth-based devices need an external bias voltage to promote water photoreduction. For the efficient charge transport in the system, the optimized thickness of the BiVO4 photoanodes should match its charge carrier diffusion length (Ld = 70-100 nm) [22] [23] [11]. Nevertheless, the carrier diffusion length also changes with antimony incorporation. Bulk and surface recombination losses of photogenerated charged carriers play a vital role in determining the efficiency of oxide photoanodes such as BiVO4. Low mobility and short minority charge carrier lifetime lead to poor collection of holes from the bulk of the material to the surface of the material [21]. The short diffusion length has been addressed by fabricating nanocrystalline films in which the characteristic dimensions are comparable with diffusion length, so that holes from the n-type photoanodes gain significant chances of reaching to the surface. Recent optimization on surface morphology [24] and elemental doping (such as W, Mo, Ni, Nb etc.) into BiVO4 bulk have resulted in substantial improvements in the photocurrent response in concentrated photo illumination [25] [26] [20] [1] [27] [28] [29] thereby obtaining higher charge separation efficiency and reducing surface recombination. In this report, we synthesized reduced bandgap BiVO4 thin film by alloying with antimony in Sb:V = 1:10 ratio. Experimental Methods 1) Target synthesis: Preparation of Sb:BiVO4 precursor powder Precursor powder was synthesized by a high-temperature solid-state reaction method by mixing bismuth oxide (Bi2O3), Vanadium oxide (V2O5) keeping the metals ration Bi:V = 1:1 and added Sb2O3 such that ratio of Vanadium and Antimony becomes Sb:V =1:10. The mixture was homogenized using a rolling mixer and as-obtained yellowish precursor powder was transferred to a fused-silica crucible which was placed into an air- ambient electric muffle furnace at 840 oC for 140 hrs. A fused-silica plate was placed over the crucible to mitigate the loss of any volatile components (particularly Bi vapor) without creating a gas-tight seal, thus allowing excess oxygen to be present during the annealing process. The assembly was brought up to approximately 840 oC over a period of 4 hours and then held at this temperature for another 140 hours. The furnace was then deactivated and allowed to cool naturally in the closed state. The resulting powder was strong solid chunk and was mild yellow in appearance. This solid material was then crushed and grinded thoroughly using agate mortar and pestle until it became a fine microparticle. Approximately 20 g of the annealed powder was used to fabricate a target which could be used for RF sputtering depositions. The powder was loaded into a stainless-steel target cup with a 2ʺ diameter cavity and pressed at room temperature using hydraulic press with an applied force of 12 tons for 20 minutes to get the high purity target ready for installation. 2) Thin Film Deposition: Radio Frequency (RF) Magnetron Sputtering The high-purity homemade target was loaded into a custom-built sputtering chamber. Depositions were performed on Fluorine-doped tin oxide coated glass substrates (FTO-Tec 15 Pilkington). Substrates were cleaned ultrasonically with DI water, acetone, isopropanol, and ethanol before loading into the RF sputtering chamber. The substrate was covered by a strip on one side to prevent film deposition underneath so that electrical contacts could be made for the electrical and photoelectrochemical measurements. The Sb:BiVO4 thin films were prepared by Radio Frequency sputtering in Argon/Oxygen plasma environment. RF sputtering powers typically ranging from 40 -- 70 W, and chamber pressures of 10 mTorr sustained by supplying argon gases with the flow rate of 30 sccm. The thickness of the obtained film was varied from 80 nm to 1 micron. 3) Characterization and measurement The atomic ratios of metals in the precursor powder were determined using energy dispersive x- ray spectroscopy with Rigaku Cu Kα radiation. The surface morphology and bulk elemental composition of the thin films were characterized using a Hitachi scanning electron microscope (SEM) with in-built energy dispersive spectroscopy (EDS) attachment. EDS measurements for elemental analysis were taken of regions approximately 500 μm x 500 μm in area. Film thicknesses were measured using a DEKTAK profilometer to determine the step height at two locations namely at a tape-masked center and holder frame-masked edges to observe the thickness variation across the film. Bulk crystalline structure of the thin films was characterized using a Rigaku X-ray diffractometer using coupled 2θ Bragg-Brentano mode and a copper X-ray source (Kα Cu =1.54 Å). Phase assignments were made based on the Joint Committee on Power Diffraction Standards (JCPDS) database. The optical absorbance spectrum was measured by a PerkinElmer lambda 1050 UV-vis-NIR spectrophotometer. The transmittance and reflectance of the samples were measured by optical spectrometer using 300 nm -- 1500 nm wavelength and the band gaps were calculated using the following relation. 𝛼 = 1 𝑡 ln [ (1 − 𝑅)2 𝑇 ] (1) Where α is the absorption coefficient, t is thickness, and R and T are reflection and transmission respectively. Now, if we plot (αhν) n vs. hν, the we can get a straight line, the intercept of which gives us the band-gap value. n= 2 for direct; n=1/2 for indirect transition. 4) Photoelectrochemical (PEC) measurements Photoelectrochemical measurements of this oxide photoanodes were conducted using a three- electrode cell configuration in various electrolytes with Ag/AgCl reference electrode and a platinum coil as a counter electrode. The major advantage of integrated PEC is that solar energy capture, conversion, and storage are combined in a single integrated system. Films were tested in various electrolyte solutions such as 1M KOH, 1 M NaOH, NaSO3 + KH2PO4, and H2SO4 to observe the photocatalytic performance and resulted chemical corrosion. H2O2 was also added as a sacrificial agent to improve oxygen evolution reactions in certain cases. Voltammetry experiments were performed using a computer-controlled potentiostat. For PEC measurements, the electrode was illuminated from the front side (through the electrode) and back-side (from the glass side) as well using 15 W xenon lamp with AM 1.5. The light intensity was calibrated using a silicon diode. The illumination area was typically around 1 cm2 or less. The photoelectrochemical properties were investigated in three electrode configurations using Sb:BiVO4 films as working electrode. Sb:BiVO4 electrodes were prepared by cutting large 3ʺ×3ʺ thin films deposited on Tec-15 substrates into smaller 0.75ʺ×1.5ʺ rectangular shapes. Thin film was then covered by a non-conducting epoxy resin leaving behind a smaller area (typically less than 1 cm2) for light exposure. The film on one side of these electrodes was then etched away by gentle mechanical scratch exposing underlying conducting layer of the substrate and coated with thin indium metal layer for better electrical contact. The PEC characterization was carried out using Voltalab potentiostat, in a three-electrode configuration in a quartz-windowed cell partially filled with electrolyte solution. The recorded potential versus Ag/AgCl (EAg/AgCl) in this work was converted into potential against reversible hydrogen electrode (RHE) using the Nernst equation (2) given below: 𝐸𝑅𝐻𝐸 = 𝐸𝐴𝑔/𝐴𝑔𝐶𝑙 + 0.059 × 𝑝𝐻 + 0.1976 𝑉 (2) The system was purged with nitrogen for 30 mins in order to remove possible oxygen dissolved in the electrolyte. Photoelectrochemical response was recorded on both the forward bias and reverse bias potential under illumination. The illumination source was 300 W Xe lamp calibrated and equipped with AM 1.5 filter. The light intensity of 100 mW/cm2 was adjusted and calibrated using silicon photodiode. Results and discussion A) Crystal Structure and Surface Morphology The XRD patterns of annealed BiVO4 films with different elemental doping concentrations have been studied. X-ray diffraction patterns in Figure 1 shows that upon 10% antimony alloying Bragg peaks of BiVO4 (011) disappeared and intensity of peak (112) at 270 increases. The increase in intensity suggests a preferential growth of 112 orientation, which may be arisen from Sb affecting film nucleation during sputtering process. This was not expected in case of substitutional doping or replacement of V5+ ions with Sb3+ ions since Sb3+ ions (0.76 Å) are bigger than V5+ ions (0.54 Å). If Sb3+ is present in the interstitials as a dopant or replaces Bi3+ (ionic radius of 1.17 Å), there would have been decrease in lattice parameter, this trend can be seen in XRD pattern for SbVO4 comparing with BiVO4 (supplementary information), where the peak has shifted to higher 2theta value [21]. When doping concentration is more into alloying label, the crystal structure is not retained, and thence the presence of secondary phases is revealed. We suspect the presence of both the V3+ and V5+ ions in the BiVO4 crystal lattice and a fraction of Sb5+ ions (0.60 Å) replaces V3+ ions (0.64 Å) during alloy sintering process. Figure 1: XRD patterns of undoped BiVO4 samples (red curve) and 10% antimony alloyed BiVO4 samples. The peaks indicated by "" originated from underlying FTO substrate. The uniform film of thickness ranging from 80 nm to 1 µm was obtained by sputtering antimony alloyed BiVO4 target in Argon plasma (a total flow of 30 sccm) using RF power of 50 - 70 W. The synthesized target and as deposited sputtered film are shown in Figure 2. The deposition rate was 1.5 -- 2.0 nm per minute. Figure 2: Photographs of Sb alloyed BiVO4 homemade target and RF sputtered thin film sample of thickness of 800 nm. The surface morphology of the Sb:BiVO4 films is illustrated by the SEM pictures in Figure 3. The room temperature deposited film shows evidence of evidence of uniform crystal growth with average grain sizes of 50 nm. EDX studies confirmed the concentration level of antimony into the bulk. The films appear to be non-porous, and crystal size considerably grows bigger upon subsequent annealing. It can be seen that the surface of the films consists of well-formed 1020304050607080Intensity (a.u.)2Q BiVO4 10% Sb:BiVO4***011112220crystallites with lateral dimensions of the order of 0.1-0.5 microns after annealing at 200 oC for 60 minutes. The relatively smooth morphology and compactness compared with nanostructured films is convenient for this study since it avoids the complications associated with three-dimensional development of the space charge region. Figure 3: SEM micrographs a) as deposited Sb alloyed BVO at room temperature; b) annealed at 100 oC; c) and d) annealed at 200 oC for 60 minutes. B) Optical Properties The tauc plot for direct band gap estimation of 10% antimony alloyed BiVO4 (Sb:BiVO4) thin films is shown in Figure 4 below. As in literature [1] [30] [31], undoped BiVO4 has a direct band gap of 2.4 eV. Researchers suggest that substitutional doping is unique method to reduce its intrinsic band gap [32] [33]. Our research indicates that with the incorporation of antimony in the bulk of the film, the band gap can be easily manipulated. Unlike the doping, antimony alloying does not provide linear relationship between alloying concentration level and band gap of the material. We found that with higher alloying level of Sb to V as 1:1 and more lowers the band gap by 0.13 eV but it also produces secondary phases. For instance, band gap of 2.27 eV for BiSb0.5V0.5O4 as shown in supplementary information. But with lower percentage of antimony alloying into the film, we obtained different results with significant reduction in band gap. 10% antimony alloyed (Sb:V = 0.1:1) BiVO4 exhibits significantly lower band gap of 1.72 eV and corresponding enhanced photo absorption as shown in Figure 4 and Figure 5. Figure 4: Tauc Plots for direct band gap estimation a) 0.1 Sb alloyed BiVO4 annealed at 200 oC Figure 5: UV-visible absorption spectra of 400 nm thick Sb:BiVO4 thin film. (Inset: direct band gap estimation after annealing at 200 oC for 60 minutes) C) Photoelectrochemical testing of sputtered Sb:BiVO4 photoanodes The photocurrent-voltage characteristic of a photoelectrochemical cell for solar hydrogen production via water splitting, using 10 % antimony alloyed BiVO4 as photoanode, was obtained. Photoelectrochemical characteristics of the cell were investigated by three electrode system. Radio Frequency sputtered Sb:BiVO4 thin films displayed significantly improve on its photochemical activities under forward bias compared to RF sputtered pristine BiVO4 (not shown here). The photocurrent obtained for rf sputtered Sb:BiVO4 electrodes mostly depends on its thickness. In general, photo absorption increases with thickness of the absorber layer up to an optimized limiting thickness. Thinner films suffer from large dark current at higher bias region, thicker films show smaller photocurrent at higher bias. Roughly 400 nm thick Sb:BiVO4 exhibits higher photocurrent, which is evident that hole transport length increases with antimony alloying compared to 200 nm thick pristine bismuth vanadate [34]. Optimum thickness is 400 nm where film displays significantly higher photocurrent at lower bias region as shown in Figure 6b. However, further increases in thickness does not necessary improve photocurrent as Figure 6a showed that hole transfer length should be in the order of film thickness to gain maximum photocurrent. Figure 6: JV curve for 80-600 nm thick sputtered Sb:BiVO4 on FTO in pH 13.7 KOH solution a) under dark and illumination. b) chopped light The dark current increases in higher bias region and it is more pronounced in thinner films than the thicker films as shown in Figure 6, dotted red lines for 80 nm thin film increases sharply after 0.9 V against Ag/AgCl but the steepness decreases as we go to thicker films and there is not significant dark current for 600 nm thick film as in dotted sky-blue lines. Clearly this means that accumulation of positive surface charge (i.e. holes) associated with Fermi level pinning resulted from crystallographic defects and an indication of uncompensated series resistance losses at the surface [35]. Furthermore, the spikes and transient current overshoot on the photocurrent plots (as in Figure 6b) is due to the build-up of positive charges that are queuing to take part in the OER. These trapped holes at the surface appears to be associated with sluggish hole transfer kinetics, which in theory can be overcome by using suitable catalyst for OER or by adding hole scavenger into the electrolyte as shown in Figure 7. In addition, electrodes tested in pH 13.7 electrolyte solution suffer from severe chemical corrosion. The reason for chemical corrosion is unknown at this point. So, we performed other tests on lower pH electrolyte (pH 7.0 buffer) to conform that the corrosion is typically chemical in nature but not due to photocorrosion. Surface treatments or extra layer deposition on the top would open the pathways for applications of Sb:BiVO4 in stacked multijunction electrodes. At the same time, recombination losses in the bulk of the semiconductor electrode can be minimized by growing nanostructured thin films or incorporated nanoporosity [36] [20]. It can be seen form Error! Reference source not found.(supplementary information) that the cathodic shift of photocurrent onset potential to -0.35 V for 10% antimony alloyed bismuth vanadate. There are several possible reasons for this behavior, including widening of the space charge and/or reduction in surface recombination as well as the kinetics of the multi-electron transfer process. The PEC performance of antimony alloyed bismuth vanadate was tested under lower pH buffer solution to study surface kinetics without suffering from electrode corrosion. Even though the overall photocurrent is low in neutral electrolyte as compared to higher pH solution, we found that with the addition of H2O2 hole scavenger, the photocurrent increases significantly as shown in Figure 7 below. Figure 7: Photocurrent response of Sb:BiVO4 electrode with and without hole scavenger (3% H2O2) in pH 7 buffer solution. In addition to the relationship between doping concentration, thickness dependency, and PEC performance from sputtered Sb:BiVO4 films, we also explored differences between front illumination and back illumination as shown in Figure 8. A variety of reports on solution-based BiVO4 thin films have found superior photocurrent under back-side illumination because of significantly lower charge separation efficiency [37] but can be increased by extra treatment or intentional doping [38]. But in contrast, we observed the net photocurrent under front-side and back-side illumination is almost uniform for 400 nm thick film in pH 7.0 buffer electrolyte. Our study finds that the maximum photocurrent obtained with 400 nm thick samples may result from the space-charge region widening with antimony alloying in BiVO4 lattice. Literature suggests the highest photovoltage is obtained for 100 nm thick pristine BiVO4 because of its matching hole diffusion length [39]. When the film thickness exceeds the hole diffusion length, holes generated deeper in the bulk could not transfer to the surface to involve in oxidation reaction and gets trapped or recombine with majority electron. However, when hole acceptors like H2O2 with fast oxidation kinetics were present in electrolyte, the higher photocurrent generates suggesting the presence of considerable surface states causing rapid surface recombination [40]. For the thickest film of 1 micron, neither front nor back-side illumination is effective since obtained photocurrents were next to negligible. Figure 8: J -- V (current density vs voltage) curves of 400 nm thick Sb:BiVO4 photoandoe. The samples were tested in a three- electrode configuration under front and back-side chopped illumination with an AM 1.5, 100 W/cm2 light source and in pH 7 buffer solution D) Effect of Electrolytes More recently, the effects of the electrolyte and its pH on the PEC performance and photocatalytic activities of pristine BiVO4 have been investigated [41] [42]. Researchers found that increasing the pH of the electrolyte solution from acidic to alkaline increased the band bending and hence electron-hole separation [43] [44], our observation aligns towards the same but highly alkaline electrolyte solution appears to etch away the material in longer exposure as shown in photographs below. Figure 9: Sb:BiVO4 electrodes before and after multiple testing in 1.0 M NaOH solution. A bright white spot on the center of the film appears to be chemical erosion of materials. We considered the visual degradation of thin film in 1.0 M NaOH solution as a form of chemical corrosion as dark current goes high under testing as FTO exposes directly to the electrolyte. Surface treatments and overlayers at the surface are generally implemented to reduce surface recombination [45] [46] and inhibits the chemical degradation of thin films. In our study, 2 nm gold underlayer deposited on FTO before thin film deposition helped to separate generated charged carriers and reduce the dark current and a very thin nickel overlayer (2-10 nm) deposited on top of Sb:BiVO4 increases resistance against chemical corrosion but reduced photo absorption significantly in both cases as shown in supplementary information. Conclusions We synthesized high quality Sb:BiVO4 thin films by reactive RF sputtering for the first time and explored the influence of the V/Sb ratio on structure, morphology, and PEC performances. Antimony alloying resulted in significant band gap reduction especially for 0.1:1 Sb:V ratio. Controlled antimony alloying changes valence band position thereby narrowing down the fundamental band gap of the material. 10% Sb alloyed BiVO4 thin film showed significantly smaller band gap of 1.72 eV and relatively higher photocurrent density without any surface modification. Nonetheless, Sb:BiVO4 displayed its applicability in commercial water splitting materials by modifying its surface to resist chemical corrosion. We also discussed the influence of front illumination versus back illumination, finding that the influence of illumination side was film thickness dependent and might be limited by hole transport. In addition, we improved the resistance against photocorrosion by depositing thin layer of Nickel on the top of Sb:BiVO4 thin film but at the expense of photocurrent. 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1705.07717	1	1705	2017-05-07T19:02:56	A Highly Efficient Polarization-Independent Metamaterial-Based RF Energy-Harvesting Rectenna for Low-Power Applications	[ "physics.app-ph" ]	A highly-efficient multi-resonant RF energy-harvesting rectenna based on a metamaterial perfect absorber featuring closely-spaced polarization-independent absorption modes is presented. Its effective area is larger than its physical area, and so efficiencies of 230% and 130% are measured at power densities of 10 uW/cm2 and 1 uW/cm2 respectively, for a linear absorption mode at 0.75 GHz. The rectenna exhibits a broad polarization-independent region between 1.4 GHz and 1.7 GHz with maximum efficiencies of 167% and 36% for those same power densities. Additionally, by adjustment of the distance between the rectenna and a reflecting ground plane, the absorption frequency can be adjusted to a limited extent within the polarization-independent region. Lastly, the rectenna should be capable of delivering 100 uW of power to a device located within 50 m of a cell-phone tower under ideal conditions.	physics.app-ph	physics	A Highly Efficient Polarization-Independent Metamaterial-Based RF Energy-Harvesting Rectenna for Low-Power Applications Department of Physics, University of South Florida, 4202 E. Fowler Avenue, Tampa, FL 33620 Department of Physics, University of South Florida, 4202 E. Fowler Avenue, Tampa, FL 33620 C. Fowler ([email protected]) J. Zhou ([email protected]) Abstract A highly-efficient multi-resonant RF energy-harvesting rectenna based on a metamaterial perfect absorber featuring closely-spaced polarization-independent absorption modes is presented. Its effective area is larger than its physical area, and so efficiencies of 230% and 130% are measured at power densities of 10 µW/cm2 and 1 µW/cm2 respectively, for a linear absorption mode at 0.75 GHz. The rectenna exhibits a broad polarization-independent region between 1.4 GHz and 1.7 GHz with maximum efficiencies of 167% and 36% for those same power densities. Additionally, by adjustment of the distance between the rectenna and a reflecting ground plane, the absorption frequency can be adjusted to a limited extent within the polarization-independent region. Lastly, the rectenna should be capable of delivering 100 µW of power to a device located within 50 m of a cell-phone tower under ideal conditions. Introduction Although batteries have facilitated the wide-spread adoption of numerous portable electronic devices, they are not an ideal solution for implementation when costs, recharging, and/or large numbers of devices make their use prohibitive, as is often the case for various types of sensor networks2. An alternative approach with the potential to be more economical and convenient is by means of capturing ambient RF signals with an antenna and converting the induced electrical currents to DC power with a rectification system. To be practical, such an energy harvesting device should be highly efficient, compact in size, possess large bandwidth, and be polarization-independent. With antennas there is a tradeoff between the maximum power captured and directionality4 that will also need to be taken into consideration with any design. Historically, this approach has yet to be commercially successful due to the low amounts of ambient energy available5-9, and the reduced efficiency of rectification systems when operating under low-power conditions10. Indeed, there is reason to believe that this approach will never be successful since there is simply not enough power available to be harvested for operating devices with even minimal power requirements (≈100 µW)11. Nonetheless, there are at least three reasons for the continued pursuit of ambient RF energy harvesting technology: 1. The increasing use of Wi-Fi networks, Cell-phones, Blue Tooth Devices, and so forth, may increase the amount of ambient power available to a level large enough for wireless RF energy harvesting to be practical. 2. The technology can potentially be scaled to regions of the electromagnetic spectrum where ambient power is more plentiful, such as infrared and optical. 3. The technology can easily be adopted for wireless power transport, where the power is collected from a dedicated source rather than from ambient sources. While conventional antennas have never been adequate to capture enough RF power from ambient sources alone to be effective, the invention of metamaterial perfect absorbers (MPA)12,13, has re-opened the possibility of practical ambient RF energy harvesting14-25. Metamaterials are composed of a 2-D or 3-D array of resonating structures. The arrangement and design of the structures allows the optical properties of the bulk material, such as the electric permittivity and magnetic permeability26, to be tuned to a desired value. This effect primarily occurs at the resonance frequency of the structure. A metamaterial perfect absorber is a material where the imaginary components of the permittivity and permeability are maximized, while the real components are tuned to be impedance-matched to free space so that reflection is eliminated and electromagnetic waves at the resonance frequency are completely absorbed in the material. A perfect absorber is composed of a 2-D array of resonating structures along with an electrically conducting ground plane placed parallel to the array and separated by a substrate of appropriate thickness. Figure 1: Design of polarization‐independent energy harvesting rectenna with polarization angles indicated along with the equivalent circuit model for Schottky diodes used for simulations. The direction and placement of Schottky diodes is indicated by red triangles. The parameters for the diodes were pulled from the specifications sheet. The red lines at the corners indicate where the connections to the load are made. L1 =10 mm, L2 = 16 mm, g1 = 1 mm, w = 1 mm, g2 = 2 mm. The total area is about 54 cm2. If a rectification system is built into a perfect absorber, the power absorbed by the material can be harvested and used or stored instead of lost. Such an RF energy harvesting device can potentially be constructed to be highly efficient, polarization-independent, electrically small27,28, and omnidirectional. In this work, we present a design built from a network or split ring resonators that exhibits high efficiency at low power, good polarization-independence, limited tunability, and a relatively small physical area. Method The design was made in CST Microwave Studio and simulated using a plane wave and the transient solver. The efficacy of the design was determined by using far field monitors to calculate the broadband absorption cross section (ACS) and by monitoring the power delivered to an impedance-matched load. The ACS, defined as the power absorbed by the sample divided by the incident power density, helps identify the presence and location of resonance peaks that result in optimal absorption, while the power measurement indicates how strongly the captured RF power is converted to DC power. The diodes were modelled using an equivalent circuit (figure 1) based from some found in the literature29,30. Various angles and ground plane distances were scanned to characterize the performance of the devices. After adjusting parameters and optimizing the design, a physical sample was constructed by the use of conventional photolithography techniques and then afterwards soldering diodes onto the surface in the arrangement indicated in figure 1. The samples are tested using a typical system for transmitting a sinusoidal signal composed of a horn antenna, signal generator, amplifier, signal analyzer, and digital multimeter. Ideally, the measurements would take place in an anechoic chamber to reduce multipath interference. That has been forgone here for simplicity, but it introduced some fluctuations in measurements. A decade resistor box is used as a proxy for a device, and is connected across the terminals of the rectenna. The optimum value of the load resistance for maximum power transfer can be found by adjusting the resistor box. The efficiency (η) is defined as the power delivered to the load divided by the power density, S, and the geometric area of the sample (equations (1) and (2))2 (cid:2015)(cid:3404) (cid:1842)(cid:3013)(cid:3042)(cid:3028)(cid:3031),(cid:3005)(cid:3004)(cid:1845) (cid:3400)100%(cid:3404) (cid:1848)(cid:3013)(cid:3042)(cid:3028)(cid:3031),(cid:3005)(cid:3004) (cid:2870)(cid:1844)(cid:3013)(cid:3042)(cid:3028)(cid:3031)(cid:3400)(cid:1845)(cid:3400)100% (cid:1845)(cid:3404)(cid:1833)(cid:1842)(cid:3042)(cid:3048)(cid:3047) 4(cid:2024)(cid:1856)(cid:2870) (1) (2) PLoad,DC is the DC power delivered to the load, G is the gain of the horn antenna, Pout is the power delivered to the horn antenna, and d is the distance between the horn antenna and the energy harvester. This definition can lead to efficiency measurements greater than 100% as also noted by Alavikia, Almoneef, and Ramahi31, which does not mean that the rectenna delivers more power to the load than it receives. Rather, it means that the effective area of the rectenna is larger than its physical area, which is possible for non-aperture antennas (a dipole antenna is an example). The first step in testing the samples was to find the optimum resistance of the load for delivering power. Due to the nonlinear nature of the diodes, the optimum load value is a function of the input power and the frequency. However, experiments with the sample indicate that the deviations only seem to affect the efficiency by around 3 or 4 percentage points provided that there is enough input power to activate the diodes, and so finding the optimum load at a single frequency with a reasonable power level (~10 (cid:2020)(cid:1849)/(cid:1855)(cid:1865)(cid:2870)) will work satisfactorily. Then the efficiency is measured while varying the angle of incidence in 15 degree steps over a 180 degree arc (only 180 degrees is necessary, because the oscillatory nature of the sinusoidal electromagnetic fields results in 180 degree rotational symmetry) and sweeping the frequency over the full range of our system (0.7-2.0 GHz) in 10 MHz steps, while keeping the transmitted power density constant at 10 µW/cm2. This allowed the resonance peaks to be identified and the polarization dependence to be determined. A conducting metal plate with identical area to the sample is then placed behind the samples to create a Fabry-Perot cavity. Adjusting the distance between the plate and the sample allows for selectively enhancing specific peaks by matching them up with the resonance modes of the cavity. After placing the ground plane at the optimal distance for a specified resonance peak, the sample is again measured through another 180 degree arc to determine the enhancement. As an additional means of characterizing the design, the minimal power density required to deliver 100 µW to a load is indicated for each polarization angle. Results After making a quick sweep to find resonance peaks, the optimum load was found to be 4000 Ω at an absorption peak found near 0.75 GHz with a 10 µW/cm2 power density. Before the ground plane is introduced, the efficiency of the sample behaves as shown in figures 2a and 2b. Both the experimental and simulation results show a strong absorption peak near 0.75 GHz that, although highly efficient (≈230%), does not exhibit polarization-independence but instead exhibits dipole-like behavior. Additional resonances are more readily apparent in the simulation results, than in the experimental results. When a Fabry-Perot cavity is created by introducing the ground plane, these additional resonances manifest much more strongly, particularly when the cavity resonance frequency matches the absorption resonance frequency. When the cavity length is 2-4 cm, a broad polarization-independent region emerges with efficiency up to 167% as shown in figures 2c and 2d. The presence of the ground plane actually decreases the efficiency of the absorption peak at 0.75 GHz, which would otherwise be superior, but the efficiency is still fairly large (≈140%) when the ground plane is placed at the optimal distance for the polarization-independent region (30 mm). Figure 2: Polarization dependence of energy harvesting efficiency. Experimental measurements (a) and ACS simulations (b) without the ground plane. Experimental measurements (c) and ACS simulations (d) with the ground plane spaced 30 mm behind the rectenna. Figure 3 shows the effect that the ground plane distance has on absorption and efficiency at 45 and 135 degree polarization angles. Of particular note is that the location of the polarization-independent region shifts as the ground plane is adjusted, demonstrating tunability in addition to its relatively broad range of absorption frequencies. Unfortunately, the quality of polarization-independence breaks down when the ground plane distance becomes larger than about 4 cm. The broadband behavior is caused by the presence of multiple overlapping absorption peaks in the region rather than by a single broad peak, which also explains the shift in peak absorption frequency as the ground plane is adjusted. Lastly, at 45 degrees, an additional dipole-like absorption peak emerges near 1.1 GHz. This peak reaches its maximum efficiency (≈99%) at a 45 degree polarization angle with a cavity length of 8 cm. It is the weakest absorption peak and is not polarization-independent. Comparison of the experimental results with the simulations indicate some of the weaknesses of the simulations. While the ACS does a fairly good job of predicting where resonance peaks occur, it is not very accurate at determining their relative efficiencies for energy-harvesting. A big reason for this is that the ACS includes power losses in the substrate, rings, and diodes, whereas the experimental efficiency measures only power delivered to the load. Furthermore, for peaks that emerge at higher frequencies, the simulations tend to overestimate the frequency at which they occur. This is probably because the diode Figure 3: Ground plane distance dependence. The two polarization angles were chosen to correspond to the minimum and maximum efficiencies for the absorption peak near 0.75 GHz. Efficiency (a) and ACS (b) for a 45 degree polarization. Efficiency (c) and ACS (d) for a 135 degree polarization. model used for the simulation assumes a constant junction capacitance instead of a frequency-dependent one, like found in actual diodes. Since the resonance frequency depends on the capacitance, the observed peaks are shifted. Figure 4: Minimum power density required to deliver 100 µW to a load as a function of polarization angle. Left: No ground plane. Right: 30 mm ground plane. As an additional way of characterizing the performance of the rectenna, particularly for low-power applications, the minimum incident power density required to deliver 100 µW to the load was measured as a function of polarization angle (figure 4). Without the ground plane, the polarization-independence is not very good, but the 0.75 GHz peak is at its most efficient value, being capable of powering a device with only about 1 µW/cm2 of ambient power density available at a 135 degree polarization angle. With the ground plane at 30 mm, the polarization-independent region exhibits excellent uniformity, and is capable of powering a device with only 2.5 µW/cm2 for all polarization angles. The 0.75 GHz peak, while not as efficient with the ground plane present, can still power a device with only 2 µW/cm2 at a 135 degree polarization angle. The weaker peak near 1.1 GHz requires at least 5.0 µW/cm2 and performs slightly better without the ground plane than it does with a cavity length of 3 cm. Discussion The four-ring unit cell was expected to yield polarization-independence due to its rotational symmetry and because the cross-shaped intersection of the four rings interacts with both components of the electric field for arbitrary polarization angles of a normally-incident wave. While the "frame" around the rectenna was intended to simply act as a means for combining the DC for each of the current-paths through the sample, it turned out to be a beneficial component of the design in other ways. First, the frame adds additional effective area for the antenna to capture energy. Second, both the 0.75 GHz and 1.12 GHz resonances would not occur from the 4-ring unit cell alone. Simulations of the surface currents using CST Microwave Studio (figure 5) indicate that those resonances are caused by current flowing into and out of the ring structure from the frame. Experimental measurements and simulations using only a single cell enclosed by a frame do not produce a polarization-independent peak, only a dipole-like one. Lastly, when enough unit cells are included to produce the polarization-independent region, the frame is partly responsible for the broad bandwidth because it enables closely-spaced overlapping resonances due to multiple current-paths of similar optical length. Hypothetically, the inclusion of more unit cells should enhance the performance of the polarization-independent modes relative to the dipole-like modes as additional cells should reduce the overall influence of the frame. Figure 5: Simulated current modes for absorption peaks with corresponding experimental frequency reported in parenthesis: (a) 1.13 GHz (1.11) and 45 degree polarization angle (ccw from right horizontal) (b) 1.68 GHz (1.49) and 45 degrees (c) 0.78 GHz (0.75) and 135 degrees (d)1.62 GHz (1.49) and 135 degrees. Note the slight shift in the absorption frequency of the 1.6 GHz (1.49) peak due to the difference in path lengths. There is difficulty in comparison of previous results between groups because there are a variety of definitions for efficiency found in the literature, and often times the efficiency being characterized is that of individual components of the energy-harvesting system (antenna efficiency, rectification efficiency, power management circuit efficiency, etc.) instead of the overall efficiency of the system. The antenna efficiency, in particular, is the major source of disagreement as some groups base their definition of efficiency off of the effective area of the antenna instead of the physical area20,22. This results in a more traditional definition of efficiency that will not exceed 100%, but we prefer to define efficiency in terms of the geometric area instead for a couple of reasons. The first reason is that theoretically determining the effective area of an antenna containing nonlinear elements is difficult to do and will likely not be very accurate. Measuring the geometric area for planar antennas is usually straightforward. Second, in order to fully characterize the performance of the antenna, a comparison between the effective area and the geometric area would still need to be made. This information is essentially already included when the geometric area is used to define efficiency. Although we are not alone in using the geometric area to define efficiency1,2,31, we appear to be the first group to report efficiencies over 100%. There are a large number of designs presented in the literature for MPAs and antennas that exhibit polarization-independence, but very few of these have been adapted with rectification systems which are also supported by experimental energy-harvesting data (some designs have been tested using resistors or else only simulation results using equivalent circuit models are presented). Fewer still have been tested at power densities that are low enough that could be considered ambient (< 50 µW/cm2). Popović et al.1 and Popović (2) Popović (3) Kuhn3 Popović (1)1 Yagi‐Uda Frequency 0.915, 2.45 1.96 2.0‐18.0 0.9,1.8,2.1,2.4 Patch Array Spiral Array Multi‐Band Dipole This Work (Dipole) MPA This Work (PI) MPA 0.75 1.49 54 130% at 1 µW/cm2, 230% at 10 µW/cm2 54 36% at 1 µW/cm2, 167% at 10 µW/cm2 Antenna Type (GHz) Size (cm2) Efficiency Benchmarkc Smin (µW/cm2)d Polarization Ground Plane 45‐80?a 40.7%, 56.2% at 1 µW/cm2 616 43% at 15 µW/cm2 100+b 30% at 0.1 µW/cm2 340 20% at 6.2 µW/cm2, 2.3% at 0.62 µW/cm2 < 2 Linear No < 5 3 < 2 1 2.5 Dual‐Linear Circular Dual‐Linear?e Yes Yes No Table I Linear No Dual‐Linear Yes a The specific dimensions were not reported and so this is an estimate derived from the efficiency and the amount of power harvested b The area of the antenna is 100 cm2, but a larger ground plane of unreported area is also included in the design c These results are not always the highest efficiencies reported for each design, because values for power densities >50 µW/cm2 are omitted from this table. Popović uses the same definition for efficiency as this work, so a more direct comparison can be made. It is more difficult to compare with Kuhn, because it is unclear how they determined their antenna size for purposes of measuring efficiency. Additionally, Kuhn's antenna is designed to harvest from up to four frequencies simultaneously and so the performance will be better out in the field than is suggested by its efficiency value d Minimum amount of power density needed to deliver 100 µW/cm2 to a load. In most cases, these values were not directly reported for each design. Instead this has been estimated from the efficiency reported and the antenna size e The authors did not make any comments as to the polarization‐dependence, but judging from its appearance it is probably dual‐linear Kuhn, Lahuec, Seguin, and Person3 have produced results that appear to be the most comparable to those presented in this work and so are compared with our design in terms of efficiency, polarization-dependence, and ability to deliver power to a load at low power densities (table1). It is important to note that the designs of Popović and Kuhn feature power-management circuits, so in that sense they may be more "field-ready" than the design presented here. Based on reported efficiencies and comparisons with other designs (some designs exhibiting polarization independence, others not), the design presented in this paper appears to be the most efficient low-power energy-harvesting device to date (for the 0.75 GHz peak) while also being the most efficient polarization-independent design. Additionally, the polarization-independent region is fairly broad and exhibits limited tunability. Furthermore, this design is relatively compact in size (54 cm2) compared to others which harvest similar amounts of power. Power density measurements reported by Visser, Reniers and Theeuwes8 indicate that in some cases there is enough power available for harvesting within 50 m of a cell-phone tower that this device could potentially continuously power a 100 µW device, although it may need to be rescaled to match frequencies. In practice, a closer distance would likely be required due to fluctuations in output from the tower and also because the design does not yet have a power management circuit to compensate for the non-sinusoidal signals. There are a few simple ways the design could readily be improved. Work by Kuhn, Seguin, Lahuec, and Person32 indicates that a MSS20-141 Schottky diodes are superior to SMS-7630 diodes for low power. Additionally, a Rogers TMM10i dielectric substrate20 could be used. It has a lower loss tangent and higher index of refraction than the FR4 substrate used in this design. This could improve efficiency by reducing losses and the device could be made more compact by filling the cavity with the substrate, which would reduce the ground plane spacing needed for optimal efficiency (although this would introduce some power loss). Additionally, there may be alternate ways to orient the diodes that would improve the efficiency or the uniformity of the polarization-independence. An idea for further exploration would be testing a design with more unit cells contained within the frame to see if the polarization-independent modes would be enhanced and if the bandwidth would increase as more current paths became available. Lastly, although the 4-ring unit-cell was created with energy-harvesting in mind, the electrical connections created by the overlapping cells might result in useful properties that would be desired for other applications. Conclusion A multi-resonant RF energy-harvesting rectenna based on a metamaterial perfect absorber with efficiencies exceeding 100% has been presented. It possesses an absorption peak for linear polarizations at 0.75 GHz featuring efficiencies around 230% at 10 µW/cm2 and 130% at 1 µW/cm2, and also features a broader polarization-independent region at 1.4-1.7 GHz (with 167% and 36% maximum efficiencies at those same respective power densities) for which the absorption frequency can be modestly tuned by adjusting the distance between the ground plane and the rectenna. Under ideal conditions, 100 µW of harvested power could be delivered to a device with only 1 µW/cm2 of available power density for the linear mode, and 2.5 µW/cm2 for the polarization-independent mode. These power densities can be found within 50 m of some cell-phone towers. References 1 Popovic, Z. et al. Scalable RF Energy Harvesting. Ieee Transactions on Microwave Theory and Techniques 62, 1046-1056, doi:10.1109/tmtt.2014.2300840 (2014). Falkenstein, E., Roberg, M. & Popovic, Z. Low-power wireless power delivery. IEEE Transactions on Microwave Theory and Techniques 60, 2277-2286 (2012). 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Kuhn, V., Lahuec, C., Seguin, F. & Person, C. A Multi-Band Stacked RF Energy Harvester With RF-to-DC Efficiency Up to 84%. IEEE Transactions on Microwave Theory and Techniques 63, 1768-1778 (2015). Balanis, C. A. Antenna Theory: Analysis and Design. 3rd edn, pp. 89, 92, and 1031 (Wiley- Interscience, 2005). Bouchouicha, D., Dupont, F., Latrach, M. & Ventura, L. Ambient RF energy harvesting. International Conference on Renewable Energy and Power Quality (2010). Andrenko, A. S., Xianyang, L. & Miaowang, Z. in TENCON 2015 IEEE Region 10 Conference (Macau, 2015). Piñuela, M., Mitcheson, P. D. & Lucyszyn, S. Ambient RF energy harvesting in urban and semi- urban environments. IEEE Transactions on Microwave Theory and Techniques 61, 2715-2726 (2013). Visser, H. J., Reniers, A. C. F. & Theeuwes, J. A. C. in EuMC 2008 Vol. 38 721-724 (IEEE, 2008). Mimis, K., Gibbins, D., Dumanli, S. & Watkins, G. T. Ambient RF energy harvesting trial in domestic settings. IET Microwaves, Antennas, and Propagation 9, 454-462 (2014). Hemour, S. et al. Towards low-power high-efficiency RF and microwave energy harvesting. IEEE Transactions on Microwave Theory and Techniques 62, 965-976 (2014). Visser, H. J. & Vullers, R. J. M. RF energy harvesting and transport for wireless sensor network applications: principles and requirements. Proceedings of the IEEE 101, 1410-1423 (2013). Landy, N. I., Sajuyigbe, S., Mock, J. J., Smith, D. R. & Padilla, W. J. Perfect metamaterial absorber. Physical Review Letters 100 (2008). Watts, C. M., Liu, X. & Padilla, W. J. Metamaterial Electromagnetic Wave Absorbers. Advanced Materials 24 (2012). Zhu, N., Ziolkowski, R. W. & Xin, H. A metamaterial-inspired, electrically small rectenna for high- efficiency, low power harvesting and scavenging at the global positioning system L1 frequency. Applied Physics Letters 99 (2011). Chen, Z., Guo, B., Yang, Y. & Cheng, C. Metamaterials-based enhanced energy harvesting: A review. Physica B: Condensed Matter 438, 1-8, doi:http://dx.doi.org/10.1016/j.physb.2013.12.040 (2014). Dincer, F. Electromagnetic energy harvesting application based on tunable perfect metamaterial absorber. 2444-2453, doi:http://dx.doi.org/10.1080/09205071.2015.1027794 (2015). Gunduz, O. T. & Sabah, C. Polarization angle independent perfect multiband metamaterial absorber and energy harvesting application. Journal of Computational Electronics 15, 228-238 (2016). Unal, E. et al. Tunable perfect metamaterial absorber design using the golden ratio and energy harvesting and sensor applications. Journal of Materials Science: Materials in Electronics 26, 9735-9740 (2015). Shang, S., Yang, S., Liu, J., Shan, M. & Cao, H. Metamaterial electromagnetic energy harvester with high selective harvesting for left- and right-handed circularly polarized waves. 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AIP Advances 6, 125020, doi:http://dx.doi.org/10.1063/1.4972121 (2016). Karaaslan, M., Bağmancı, M., Ünal, E., Akgol, O. & Sabah, C. Microwave energy harvesting based on metamaterial absorbers with multi-layered square split rings for wireless communications. Optics Communications 392, 31-38, doi:http://dx.doi.org/10.1016/j.optcom.2017.01.043 (2017). Smith, D. R., Padilla, W. J., Vier, D. C., Nemat-Nasser, S. C. & Schultz, S. Composite medium with simultaneously negative permeability and permittivity. Physical Review Letters 84, 4184-4187 (2000). Erentok, A. & Ziolkowski, R. W. Metamaterial-inspired efficient electrically small antennas. IEEE Transactions on Antennas and Propagation 56, 691-707, doi:10.1109/tap.2008.916949 (2008). Ziolkowski, R. W. & Erentok, A. Metamaterial-based efficient electrically small antennas. IEEE Transactions on Antennas and Propagation 54, 2113-2130 (2006). Keyrouz, S., Visser, H. J. & Tijhuis, A. G. in 42nd European Microwave Conference. 428-431. 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1905.00619	1	1905	2019-05-02T08:50:39	Analysis, optimization, and characterization of magnetic photonic crystal structures and thin-film material layers	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	MPC (Magneto-Photonic Crystal) Optimisation is a feature-rich Windows software application designed to enable researchers to analyze the optical and magneto-optical spectral properties of multilayers containing gyrotropic constituents. A set of computational algorithms aimed at enabling the design optimization and optical or magneto-optical (MO) spectral analysis of 1D magnetic photonic crystals (MPC) is reported, together with its Windows software implementation. Relevant material property datasets (e.g., the optical spectra of refractive index, absorption, and gyration) of several important optical and MO materials are included, enabling easy reproduction of the previously published results from the field of MPC-based Faraday rotator development, and an effective demonstration-quality introduction of future users to the multiple features of this package. We also report on the methods and algorithms used to obtain the absorption coefficient spectral dispersion datasets for new materials, for which the film thickness, transmission spectrum, and refractive index dispersion function are known.	physics.app-ph	physics	Analysis, optimization, and characterization of magnetic photonic crystal structures and thin-film material layers M. Vasiliev, K. Alameh, and M. Nur-E-Alam Electron Science Research Institute, School of Science, Edith Cowan University, 270 Joondalup Dr, 6027, WA, Australia. Corresponding author: Mikhail Vasiliev ([email protected]) Abstract: MPC (Magneto-Photonic Crystal) Optimisation is a feature-rich Windows software application designed to enable researchers to analyze the optical and magneto-optical spectral properties of multilayers containing gyrotropic constituents. A set of computational algorithms aimed at enabling the design optimization and optical or magneto- optical (MO) spectral analysis of 1D magnetic photonic crystals (MPC) is reported, together with its Windows software implementation. Relevant material property datasets (e.g., the optical spectra of refractive index, absorption, and gyration) of several important optical and MO materials are included, enabling easy reproduction of the previously published results from the field of MPC-based Faraday rotator development, and an effective demonstration-quality introduction of future users to the multiple features of this package. We also report on the methods and algorithms used to obtain the absorption coefficient spectral dispersion datasets for new materials, for which the film thickness, transmission spectrum, and refractive index dispersion function are known. Keywords: 1D magnetic photonic crystals; multilayer film modelling; modelling of Faraday rotation spectra; MPC optimization; exhaustive computation; materials characterization Program summary Program Title: Optimisation of 1D Magnetic Photonic Crystals (alternatively, MPC Optimisation) Program Installation Files: available from https://drive.google.com/open?id=1P3UgIu6nbfbmqXexrbppeiSIffplE-uv Licensing provisions: Creative Commons Attribution-NonCommercial-3.0 Unported (CC BY-NC-3.0) Programming language: Visual C#, compiled using Microsoft Visual Studio .NET 2003 Nature of problem: Calculation of the optical transmission, reflection, and Faraday rotation spectra in multilayer thin films containing gyrotropic constituents (magnetized material layers possessing magneto-optic properties); optimization of magnetic photonic crystal (MPC) designs aimed at achieving maximized transmission or reflection coincident with maximized Faraday rotation, according to sets of defined criteria; fitting of the experimentally measured transmission or reflection spectra to theory models; fitting of the absorption coefficient spectra of single-layer thin film materials using the data for optical transmission, film thickness, and refractive index spectra. Solution method: The developed programme exhaustively calculates multiple possible multilayer structure designs, based on the design structure type(s) defined prior to running optimisation. Complex-valued 4×4 transfer matrix method (accounting for all dielectric tensor components, including the non-diagonal terms responsible for gyrotropic effects) is implemented to compute the complex field amplitudes and optical intensities in either the transmitted or reflected left-hand and right-hand circularly-polarized eigenwaves propagated through the thin- film-substrate structure. Restrictions: The program is designed for use in conjunction with reliable optical constant datasets for up to 3 component dielectric materials, one of which can be modeled as magnetic dielectric possessing Faraday rotation; metallic layers are not implemented. Embedded active-X controls enabling graphical data output accept only up to 1000 data points per graphing control, whether plotting a single curve or several. 1. Introduction and background In recent years, there has been some resurgence in the research interest dedicated to engineering and characterization of magneto-optic iron-garnet materials [1-4]. Thin-film magnetic garnets are semi-transparent magnetic dielectrics possessing record specific Faraday rotations of up to several thousand °/cm, in the near- infrared spectral range, if containing bismuth substitution [5]. Generically, the chemical composition of garnet materials of this type can be described by the formula (BixRe3-x)FeyM5-yO12, where Re is rare-earth metal (e.g. Dy, Sm, Lu, Nd, or Ce), and M is transition metal such as Ga or Al [5]. The exploration of this important subclass of functional materials has decades-long history, starting from the days of bubble-domain magnetic memory development, and more recently, continued with renewed research activities, in application areas ranging from on-chip nonreciprocal components (waveguide isolators, [2, 6]), to magnetic recording [7]. Magnetic garnet materials synthesized by a range of thin-film deposition techniques and crystal-growth methods have also attracted a significant research and development momentum since 1990's, and throughout the last two decades, in areas ranging from photonic crystals to spintronics [8-14, 15]. Various approaches to the design and manufacture of magnetic photonic crystals (MPC) with tunable properties, and potentially suitable for the fabrication of non-reciprocal optical components have been reported [8-18]. Many research groups have focused on optimizing the thickness of one-dimensional (1D) MPC structures to simultaneously achieve 45° of Faraday rotation angle and maximum possible transmission at optical telecommunication wavelengths. MPCs based on quarter-wavelength thin-film stacks, which are sequences of magnetic and nonmagnetic layers with multiple embedded phase shifts (termed defects, or missing layers), have been shown to possess a significant potential for practical implementation of integrated optical isolators. This is due to the necessity of approaching Faraday rotations as large as 45°, which has been shown to be attainable, due to the resonant enhancement of Faraday rotation observed in such structures. Complex 1D MPC designs featuring "flat-top" spectral response, with almost 100% transmission within a large bandwidth (several nanometers), and close to 45° of Faraday rotation at 1550 nm can contain in excess of 200 layers [10,11], limiting their applications to the near-infrared range, where the magnetic garnets possess very low (negligible) optical absorption. Since the original development of this present MPC Optimisation program in 2005 [18], multiple garnet materials development efforts have been undertaken within our group [19-21], all of which have relied substantially on material characterisation options featured within the same software package. In particular, the option of deriving the data for the spectral dispersion of the absorption coefficient using the measured transmission spectrum and refractive index dispersion data has been very useful in characterisation of new nanocomposite-type garnet materials synthesized by co-sputtering using an extra oxide material source [19]. The present-day performance limits of 1D MPC in the visible spectral range have been evaluated using the same software [22] and using the available spectral data on the optical properties of the best-performing magnetic garnet compositions. Optical constants data of multiple recently-synthesized magnetic garnet compositions have been evaluated using the measured transmission spectra in conjunction with MPC Optimisation software and Swanepoel envelope method [23]. Our group's preferred method for calibrating the quartz microbalance sensor's tooling factors of various deposition sources also involves fitting the actual film layer thickness using MPC Optimisation software in conjunction with measured transmission spectra. A graphical snapshot of the controls and features implemented within MPC Optimisation software is shown in Figure 1, which also presents a sample optimisation result. The computation time to obtain this result is typically around 1 minute (after analyzing almost 5000 MPC designs out of possible 10000 defined by the pre-set film structure features; some of calculated designs exceed the maximum limits set for thickness or layer number, and thus are not fully evaluated). The default spectral range of calculations is extremely broad, slowing down the optimisation algorithm significantly, since the default wavelength settings and resolution have been entered to assist in fitting film layer thicknesses conveniently, which is one of the most common everyday applications of this software. Running actual MPC optimisation algorithm is best performed by zooming onto the spectral range of interest, which is usually represented by a wavelength region surrounding a narrow peak of transmission or reflection, where it is possible to engineer the enhancement of Faraday rotation. Figure 1. Front-panel controls of MPC Optimisation software and a sample optimised MPC design obtained by clicking the "Optimise" button without changing default-entered data. The result is MPC structure designed to operate at 630 nm, reliant on a magnetic garnet material of specific Faraday rotation near 2°/m at that wavelength, however, the structure enhances the Faraday rotation to 4.98°/m within the spectral transmission peak. The default-entered materials-related data used to optimise MPC designs (within the parameter space and constraints also entered as default values not relevant to any particular application) relate to a MPC design based on magnetic garnet composition Bi2Dy1Fe4Ga1O12 and SiO2 L-type layers, deposited onto a glass substrate. The optical constants and gyration data for wavelengths near 630 nm have been obtained from thick garnet layers of this composition, and the corresponding index dispersion dataset is also pre-loaded into the menu item "Extra Data Account for refractive index dispersion". The contents of the compiled html (.chm) Help file accessible from Help menu are sufficient to enable most beginner-level MPC (or thin-film) designers to quickly learn the main features of program and its data representation formats. The following sections of present article describe these main features in detail, with examples provided to enable the productive and convenient use of this feature-rich software package. 2. Overview of package operation and key examples Since the structure of 1D MPCs is essentially represented by a sequence of magnetic and non-magnetic material layers on a substrate, most of the core terminology, design structure description conventions, and analysis techniques are derived from the field of multilayer thin-film design. The input datasets necessary to define the layer sequence and the optical properties of each material type and individual layer are entered into the relevant textboxes, starting from the top-left corner of the Windows Form. The Design formula field defines the layer sequence, starting necessarily from the capital letter S defining the substrate. The layer sequence must be entered in an alphanumeric string format containing special symbols such as round, square, or curled brackets, corresponding to one of the three main design-string representation types. These types are: (i) quarter 4 wave- stack based notation, e.g. SLH(ML)2 which is perhaps the most common in thin-film design; (ii) physical thickness-based e.g. S{1.0}(L/2HL/2)1{1.06}(L/2HL/2)3 further described within help documentation. The optical properties of the substrate material (which is presumed to be dielectric, semi-infinite, and non-absorbing) are defined by only the real part of refractive index. Up to three different optical materials are allowed, denoted by letters H, L, and M, however, H-type layers are not restricted to mean "high refractive index"; the layer naming conventions are SM[1000]L[50], advanced and (iii) designs notation, notation, e.g. derived from thin-film terminology for convenience only. M layers can optionally be modelled as magnetic dielectrics, in which case gyration value at the design wavelength (the imaginary part of the non-diagonal dielectric tensor component, or Im(xy)) needs to be entered into its relevant textbox. This imaginary component of the off- diagonal dielectric tensor element describes magnetic circular birefringence, manifesting as Faraday rotation of the polarisation plane in the transmitted or reflected light waves. The real part of this tensor component can be treated as zero, in most applications, unless the experimentally-measured value is known, which is related to characterising magnetic circular dichroism and polarisation state ellipticity effects. For applications requiring good numerical accuracy over broad spectral ranges, the spectral dispersion of both the gyration and the refractive indices of all relevant materials need to be loaded from .txt formatted data files, using the options within Extra Data menu. Optionally, H-type layers can be selected to also represent a magnetic dielectric, with the same off- diagonal dielectric tensor components as in M-type material (but optionally with different refractive index and absorption), in order to model a special physical situation in which an MPC has layer-specific magnetization reversal possibilities in some individual magnetic layers within structure. If M layers are modeled as non-magnetic (e.g. just implying medium-index dielectric layers), then both the real and imaginary parts of xy can be entered as zero values; however if a small gyration is still entered by error, it will not measurably distort the transmission or reflection spectral calculations; the results regarding the Faraday rotation spectra should in this case be ignored. The details of the physical situation being modeled, in terms of incidence geometry, and the ways in which the transmitted (or reflected) light intensity is normalized with respect to the incident wave intensity, are defined using sets of checkboxes within a Menu entry "Incidence Geometry", where the relevant descriptions are given. The incidence geometry settings defined as default are the ones used most often and generic in general, since these enable the convenient and accurate fitting of lab-measured transmission spectra in deposited film-substrate systems, to the corresponding theoretically-modeled spectra, where the effects of each interface (including the back surface of substrate) are correctly accounted for in the model. The only parameter not accounted for is the physical thickness of substrate, which is modeled as non-absorbing. Alternative settings for the incidence geometry are useful for considering more theoretical situations, such as calculations of the optical intensity transmitted into a semi-infinite substrate medium, or in reflection-mode calculations, where it is often necessary to compare reflected-wave intensities, which vary with the direction of incidence. One of the most important material parameters in all layer types is the optical absorption coefficient at the design wavelength (entered in cm-1 into relevant textboxes; the corresponding extinction coefficients will then be displayed after the film design is characterised by pressing the Compute formula button), especially for materials possessing significant spectral dependency in their optical absorption. For accurate characterisation of thin films or MPCs, ideally, every material should have its optical constants dataset available for loading from the Extra Data menu option "Account for refractive index dispersion" and loaded into the specialised Form (shown in Fig. 2) prior to calculations. Material-specific optical constants data files can be prepared using zeros entered in place of an unknown absorption coefficient, for the purposes of physical layer thickness fitting, based on the accurately measured transmission spectrum data (as discussed more in detail in the subsequent sections). The end-of-file (EOF) marker in these .txt material data files prepared using editor applications such as Notepad must be placed immediately after the last figure in the last column, by way of making sure to delete any possible symbols or empty rows space below. Figure 2. Form dedicated to loading the optical constants data from text files prepared as shown, using the software-specific 27-row wavelength grid and containing the columns data for the refractive index and optical absorption coefficient (in cm-1) at each wavelength point within the spectral grid. Once the refractive index dispersion information is loaded from data file(s), the data in textboxes corresponding to the index and absorption at the design wavelength are no longer used in main spectral calculations, but used only for calculating the quarter-wave stack physical thickness in nm. For all wavelength points in-between the 27-point data grid, the values of refractive index and absorption are linearly interpolated from the nearest grid- located points. This can erroneously cause small spectral shifts appearing in the spectral locations of the transmission, reflection, or Faraday rotation peaks, seen away from the precise design wavelength, if the interpolated refractive index at that wavelength does not coincide with the value entered into front-panel textbox. This is not a significant issue for the experienced designers of MPC, once the origin of these possible small data errors is known or eliminated by entering precise (same as interpolated from the index dataset for the design wavelength) index data into front-panel textboxes. It is known apriori that the actual spectral response peak locations in quarter-wave stack-type designs will appear precisely at the design wavelengths, due to the nature of optical interference-related phenomena. In situations when the refractive index dispersion data are only available within a limited spectral interval of interest, rather than for all wavelengths in the 350 -- 1600 nm range, it is recommended to enter the available refractive index data into the newly-generated data file. The refractive index and absorption coefficient values at other wavelengths still need to be entered. The recommended practice is as follows: if, for example, the available data starts from 500 nm, enter the same values as are known at 500 nm into the wavelength grid positions for all shorter wavelengths; alternatively use any available models to predict the unknown values (e.g. Cauchy dispersion model). If the refractive indices or absorption are only available up to 800 nm, it is best to enter (for all larger wavelengths), the same (n, A) data as at the last data point (800 nm). The refractive index of the exit medium surrounding the substrate-film system is defined only by its real part (typical value is 1.0 for air), and the same exit medium is presumed to precede the (thickness-undefined) substrate, and to exist beyond the last deposited film layer, regardless of the direction of light incidence. The checkbox "Reflection Mode" sets up the calculations of the reflection spectra, and also the Faraday rotation spectrum for the reflected light, if checked. Optionally, the Show Absorption Spectrum checkbox can be checked, after which the Compute formula button will initiate new calculations, resulting in the display of the calculated absorption spectrum. 2.1. Multi-defect multilayer MPC characterisation and optimisation examples suitable for validating calculations To illustrate the suitability of software to correctly calculate the spectral responses of complex, multi-defect MPC designs, it is easiest to use the design or optimisation examples described in the published literature, e.g. [11] and [22]. One of the common goals of optimising the MPC structures has been to achieve strong spectral peaks in either the transmission or reflection (ideally approaching 100%), coincident spectrally with peaks of enhanced Faraday rotation, in either the transmission or reflection-mode operation, and ideally approaching 45° - if efficient modulation of light intensity is required. It is important to note that Faraday rotation in the reflected wave is different in its physical nature from Kerr rotation [5] (even though there may exist some terminological misinterpretations, even in the published literature); this program calculates only the angles of polarisation-plane rotation due to Faraday effect, in either geometry, and does not account for Kerr effect. Figure 3 presents a graphical summary of the input parameters needed to be entered into relevant textboxes to evaluate one remarkable MPC design from published literature [11], as well as the results of calculations. The practical implementation of this MPC design can be expected to be difficult, due to factors such as extremely high number of layers, large total thickness, the expected non-zero (but possibly well below about 0.1 cm -1) optical absorption coefficient in garnets at 1550 nm, as well as scattering effects expected to occur at multiple layer boundaries. From the theoretical insight perspective, this high-performance MPC design is still an outstanding example of MPC application potential, especially in systems using optimised surrounding media, index-matched to the mean refractive index of structure. A .mpc file (MPC Design from JLT Vol. 19 No. 12 p. 1964.mpc) is included in the subfolder "Optimisation results files" of the program installation directory, and can be loaded from the File menu, enabling easy re-calculation of the contents of Fig. 3, using pre-loaded design data. The way this MPC has been modelled also involves the customised Incidence Geometry settings, where film-side incidence is modeled, without normalising the transmitted intensity after the substrate. Rather, transmission into the substrate material is modelled, and this is why the modeled transmission within 1550 nm peak closely approaches 100%. Running MPC Optimisation algorithm, on the other hand, requires using substrate-side incidence geometry settings only. Fig. 3. MPC optimisation software used to reproduce the flat-top MPC transmission and Faraday rotation spectral properties for a 4defect design reported in [11]. The calculated graphs (obtained after entering the design data and pressing the Compute formula button) reproduce the data originally presented graphically in Fig. 3(b) of Ref. 11. All materials-related data values were used as per description in Ref. 11, and the data in the calculated graphs reproduce the results presented in Fig. 3(b) in Ref. 11 with precision. Due to materials-related constraints, such as the spectral dependencies of the absorption coefficient and gyration, achieving strong enhancements in Faraday rotation simultaneously with low optical losses becomes progressively more difficult with the reducing design wavelength. Across the visible spectral range, the optical absorption in bismuth-substituted iron garnet materials becomes the limiting factor, placing stringent limits on the achievable MPC performance characteristics, regardless of their intended application area or the design type. Therefore, the ability to generate and compare multiple and differently-structured optimised MPC designs is crucial for achieving the best possible performance characteristics, limited only by the fundamental, materials-related constraints. In order to directly reproduce the optimisation result reported in [11], by way of running constrained optimisation algorithm using the MPC Optimisation software, the materials-related datasets and a set of optimisation constraints as shown in Figure 4 must be used prior to clicking "Optimise" button. It is also necessary to set the substrate-side incidence geometry, and uncheck the second checkbox related to the way the transmitted intensity is normalised. The "flat-top" optimised MPC design will be retrieved from the database of calculated MPC designs within the set of defined criteria (60 different designs will be found to fit these overall criteria and constraints, as set per data of Fig. 4), by selecting the design with maximised spectral response bandwidth. This is done by pressing MAX (B) button. Importantly, all design substrings must be entered as per Fig. 4 to reproduce this optimisation result, with precisely 5 substrings and maximum 30 entered for the substring-repetition index. Another constraint which needs to be entered relates to the maximum allowed layer number being 203; checkbox "Calculate symmetric designs only" needs to be checked, and it is best to set the spectral resolution to 1 nm during optimisation, followed by changing it to 0.1 nm for calculating the spectral properties more accurately. The optimised design equivalent to the design of Fig. 3 (and Ref. 11) is retrieved from 60 possible designs found within criteria, by pressing the MAX (B) button. This retrieves the design with maximised full width at half maximum (FWHM) bandwidth, according to the data entered into the TMAX(%) textbox. Fig. 4. Optimised "Flat-top" high-performance MPC design reproduced by running MPC Optimisation algorithm, using checkbox "Calculate symmetric designs only" for speeding up calculations. The exact 4-defect MPC design reported in [11] (Fig. 3(b) of Ref. 11) is shown after selecting the design with maximum spectral response bandwidth from the 60 possible MPC designs found to be within optimisation criteria and constrains, as shown. The settings applied to the normalisation of the transmitted intensity within Incidence Geometry menu corresponded to the physical situation equivalent to that applied during the calculation of MPC properties in Ref. 11, stipulating the transmitted intensity normalisation procedure involving transmission "from within" the substrate material, into the index-matched exit medium. Figure 5 shows a graphic summary of MPC optimisation results first reported in [22], which illustrate the current performance limits of MPC designs aimed at developing transmission-mode magneto-optic light intensity modulators working at near 650 nm. The optical and MO material parameters relevant to Bi2Dy1Fe4Ga1O12 and similar highly bismuth-substituted nanocrystalline garnet materials (synthesized by techniques such as RF sputtering) were used in the calculations. The graphical information is reproduced from Ref. 22. Fig. 5. Calculated spectral performance parameters for multi-defect (4-defect structures, having up to 40 total layers) MPCs optimized by exhaustive computation to achieve a maximum light intensity modulation capability (maximized value of parameter (T·sin2(2ФMPC))), for n(M) = 2.376, n(L) = 1.458, and using two different optical absorption coefficients for magnetic material at 650 nm (a) = 1000 cm−1; (b)  = 2000 cm−1. These refractive index and absorption coefficients were considered constant within the design-specific wavelength region, as well as gyration (-0.02), corresponding to approximately 2 °/m near 650 nm. The data of Fig. 5 can be reproduced by running optimisation of 4-defect structures with up to 40 layers and thickness up to 5 m, composed of five sequenced (LM) and (ML) substrings, as shown, using default entered n(L) value and n(M) = 2.376. The gyration value corresponding to 2 °/m needs to be entered as -0.02 for wavelengths near 650 nm, accounting for the composition-specific sign of Faraday rotation, which is defined by convention reported in [5] and other sources. Maximum repetition index value can be set to either 10 or e.g. 12, prior to running the optimisation with either absorption coefficient. The results shown in Fig. 5 illustrate clearly that the optical absorption is the limiting factor in visible-range MPC design, even at long-wavelength red wavelengths, where the absorption is still moderate, and the thin constituent garnet layers used within MPC would have been almost visually clear. This can be demonstrated by entering a design string such as SM[68.39] into design formula textbox, and running absorption-mode calculation, (e.g. using  = 2000 cm −1), to reveal by zooming the graph area with mouse, that individual MO layers absorb only about 1.2% of the incident power on each single-pass transmission). 2.2. Generating optimised antireflector film designs using spectral target points It is possible to apply additional optimisation constraints at up to three selected wavelength points, to force the algorithm to output the designs with specific spectral features, in either the transmission or reflection mode. An example of obtaining the optimised 5-layer thin-film broadband antireflector coating designs is stored in file Try_optimise_5-layer antireflector.mpc which is placed into the subdirectory of "Optimisation results files" in the installation directory. Menu item "Extra Data Multi-wavelength spectral targets" is used to enter the additional optimisation constraints, regardless of whether the Faraday rotation features are being optimised or not. Figure 6 shows the required inputs within the two submenus related to the multi-wavelength spectral targets and the Incidence Geometry options, which will result in reproducing the 5-layer antireflector design shown also in Fig. 6. Selecting the design with maximum transmission at the design wavelength (either after running the optimisation, or simply after loading the relevant example file) will reveal the reflection spectrum as shown. Fig. 6. Example of menu and algorithm settings required to generate a number of optimised 5-layer antireflector film designs on a glass substrate. The optical materials (ZnS and MgF2) are presumed to possess constant refractive indices and zero absorption across the entire visible spectrum in this example. This example also demonstrates the use of scaled QWOT layers for use in thin substrings, the thickness of which is then being optimised by the algorithm by adjusting the repetition indices. The calculation of more than 750000 designs should still take only a few minutes. A number of antireflector-type designs can be revealed by using the button "display design N=" with any corresponding number not exceeding the number of designs found within criteria. Since the optimisation algorithm presumes the substrate-side incidence, it is convenient to define air as subtrate, and set the exit medium to glass. The obtained design S(LL)10(HH)14(LL)4(HH)1(LL)14 needs to have its deposition sequence reversed; and be re-evaluated for the film-side incidence case from air; using the physical thickness notation is preferable into S(LL)14(HH)1(LL)4(HH)14(LL)10. the design needs to be changed in this case, i.e. In physical thickness notation, for a practical deposition-ready design description, this is equivalent to SL[139.49]H[8.19]L[39.85]H[114.68]L[99.64]. It is important to not forget to set n(S) to 1.5 and n(exit) to 1.0 (air) in this case. The incidence geometry settings can now be checked to correspond to the film-side incidence. Note the way the reflectivity of the back side of the substrate is accounted for in the detailed incidence geometry settings. 2.3. Fitting of the measured thin-film transmission spectra to theoretical models One of the most frequently used applications of MPC Optimisation software, apart from optimising the MPC structures, is expected to be the fitting of actual deposited layer thickness, for thin-film materials with known refractive index dispersion function. The option of loading the measured transmission spectrum for immediate comparison with the modelled transmission spectrum of the same substrate-film system is available from menu item Inverse problem Load T spectrum for fitting. To enable accurate modeling, both of the two checkboxes corresponding to the substrate-side incidence within menu Incidence Geometry Define geometry must be checked, which is done by default. A measured reflection spectrum (if available for the normal incidence reflection, which is rare with most instruments) can also be fitted in the same way as transmission, by running the calculations in reflection mode, with the corresponding checkbox checked. During the calibration of in-situ thickness control systems e.g. quartz crystal microbalances, or reflectometer-type systems, the task of determining the actual physical thickness of deposited thin-film layers is very common, and that is where MPC Optimisation software can be used effectively, in conjunction with other methods such as SEM or profilometry characterisation. Figure 6 illustrates graphically the results of fitting the loaded (measured) transmission spectra of two thin films of composition type Bi0.9Lu1.85Y0.25Fe4.0Ga1O12 (the refractive index dispersion data file for this composition is supplied within the appropriate sub-folder in the program installation directory of the target machines). A thinner (684 nm) film modeled as deposited on a glass substrate (n(S) = 1.5) was fitted using the refractive index and absorption coefficient data file related to the as-deposited (amorphous-phase) garnet films of this composition. Since the transmission of an annealed (garnet-phase) film was actually loaded, its transmission at shorter wavelengths was in excess of that modeled; the absorption of garnet-phase films is practically always less in the crystallized state, compared to amorphous garnet-precursor films. A thicker film of fitted thickness (transmission shown in Fig. 7(b)) was measured in the amorphous phase -- and therefore the quality of fit is better. Some systematic transmission discrepancies across a wide spectral range can be attributed to a combination of possible light scattering on film surface features and film layer refractive-index non-uniformity. Fig. 7. Magneto-photonic crystal (MPC) software fitted transmission spectra of different thin film garnet layers; (a) annealed garnet sample of composition type Bi0.9Lu1.85Y0.25Fe4.0Ga1O12 and thickness 684 nm, (b) as-deposited garnet sample of the same composition but from another batch, of thickness 1310 nm. If the spectral dependency of the film material absorption coefficient is completely unknown (or the data are not reliable), but the dispersion of its refractive index is well-known (e.g. from variable-angle spectroscopic ellipsometry data), then the index dispersion data files need to be prepared with zero values entered for all absorption coefficients. These data file still enable, in many cases, very reliable fitting of the physical thickness. It is highly recommended to then back up these thickness fitting results by also applying Swanepoel method-based techniques e.g. methods reported in [23]. 2.4. Fitting of the absorption coefficient spectra in single-layer films of known refractive index dispersion function, transmission spectrum, and thickness In situations when only the refractive index spectral distribution and the measured transmission spectrum of a semitransparent material layer are available, it is possible to use the custom-prepared "zero absorption" refractive index dispersion data file, and then first fit the physical thickness (typical results are shown in Fig. 8(a)), followed by a derivation of fitted absorption coefficient spectrum using a dedicated algorithm from program menu item Inverse problem Derive absorption spectrum. In order to minimize errors, this combination of fitting procedures is only recommended, if several deposited films of the same material are available, having a significantly different physical thickness, and the fitting procedures applied to more than one film consistently lead to obtaining well- correlated datasets as a result of absorption fitting. It is also recommended to apply Swaneopol method-based fitting procedures [23], to re-confirm the validity and accuracy of the physical thickness data. Figure 8 illustrates the results of physical thickness and absorption fitting procedures obtained using a transmission file of a 481 nm thick Bi0.9Lu1.85Y0.25Fe4.0Ga1O12 as-deposited film on a glass substrate, and the corresponding material's "zero-absorption" refractive index data file, both of which are included with program distribution into the corresponding subdirectories of the installation folder. The data file named 701 nm Bi0.9Lu1.85Y0.25Fe4Ga1O12 garnet layer_n (SWEM) at A=0.txt must be loaded using "load M data" button and the subfolder corresponding to this material type (we previously characterised the refractive index of a 701 nm thick film of this material). After the best fitted thickness value (481 nm) is obtained by comparing different models of design string, such as SM[450], ….etc. SM[481], the same design string must be re-entered using a quarterwave thickness notation, e.g. S(MM)3, where the QWOT multiplier for M thickness is set to 1.125 (for n(M) = 2.21, corresponding to the nearest index data point to the default 630 nm), to match the physical thickness of 481 nm in this notation. The textbox "structure thickness (microns)" must be used to check the physical thickness changes in response to changing either the (MM)N repetition index, or the QWOT multiplier for M layers. The index n(M) = 2.21 should be entered into its corresponding textbox, after looking up the 630 nm (default design wavelength) data for the actual refractive index, to avoid possible misrepresentations of QWOT data. This notation conversion is required for running the absorption coefficient fitting algorithm, as well as using M-type layers only -- regardless of whether the material possesses any magnetic properties or not. Once within the "derive absorption spectrum" submenu, the same measured transmission file should again be re- loaded onto the graph from file, followed by a relatively self-explanatory procedure for deriving the graph of absorption spectrum. No changes are usually required in any other textboxes. The result of fitting procedure with the above-described data files is shown in Fig 8(b). Fig. 8. Iterative (bisection algorithm-assisted) fitting of the absorption coefficient spectral dependency and the required pre-fitting of film thickness through matching transmission peak features. (a) Peak-aligned transmission spectrum pre-fitting result, from which the physical film thickness information and the measured dataset on the refractive index dispersion are then used, within the option available in the "Inverse Problem" menu, to derive the absorption coefficient data; (b) the algorithm-derived (fitted) absorption coefficient spectrum (, cm-1) for 481nm-thick as-deposited Bi0.9Lu1.85Y0.25Fe4.0Ga1O12 garnet-precursor film sample on a glass substrate (its measured transmission spectrum is shown as blue curve in part (a)). In the cases when the fitting algorithm produces exceptions such as described within a dialog box text, e.g. " At some or all wavelengths, even at zero absorption in M layers, the transmission of this structure should be less than specified", adjustments can be made to either check that the incidence geometry settings are correct, or the refractive index of the substrate can be increased in the model, removing these fitting procedure errors. In cases when these issues persist in the low-absorption wavelength ranges, the wavelength range of the model can be reduced to include only the regions where the fit results can be obtained. Non-uniformities in real thin films can lead to reduced refractive index values, leading then to reductions in the modeled reflection, thus showing increased transmission at some wavelengths compared to theory models. After the absorption spectrum fitting procedure has been completed, the plotted data points can be exported into other formats, or saved in the data files using the options provided. 3. Installation Installation of MPC Optimisation software is easy, and enabled by running the installer (.msi) file supplied within the .zip archived folder used for program redistribution. A necessary pre-requisite to program installation is Microsoft .NET Framework 1.1, which must be installed onto any Windows machine prior to running the MPC Optimisation installer. The .NET 1.1 Framework installation file (dotnetfx.exe) is supplied within the archived folder file used to redistribute MPC Optimisation. No known problems have so far been identified to exist in relation to installing this older version of .NET Framework onto modern computer systems. A number of example data files containing the samples of measured garnet thin film transmission spectra and files containing the data on the refractive index and absorption coefficient spectra of various garnets and other optical materials are placed into the selected program installation folder on installation. These data enable the users to re-create the example calculations presented within this article, and therefore are useful in mastering the software operation. 4. Code-related information The program has been written as Microsoft Visual Studio .NET 2003 Solution, composed of three Projects: (i) Class Library project written using Managed C++ code, and built as .dll class library providing matrix-related computation functions; (ii) main program project, written using Visual C# and implemented as Windows Forms project; and (iii) deployment project, used for including the necessary reference assemblies, class libraries, license files, organising the file system structure within the installation directory, and generating the Installer files for program distribution. Installed MPC Optimisation program can run on any Windows system architecture, whether 32-bit or 64-bit, regardless of processor type. Two main third-party software components have been embedded into the program structure, for which the necessary developer licenses have been purchased commercially. Bluebit Matrix Library 2.2 has been used to provide classes that enable efficient complex-valued 4x4 matrix operations functionality. The Class Library .dll assembly referencing the Bluebit Matrix Library assembly has been required, through the terms of developer grade matrix software license, to be compiled as signed assembly, using a strong-name assembly key file, which is not allowed for re-distribution by the developers. The second embedded component was GigaSoft ProEssentials 5 .NET package, which has been installed on the developer's computer to provide ActiveX controls that enable scientific-type graphing output functions. The assemblies GigaSoft.ProEssentials.dll and Pegrpcl.dll are referenced by the C# project, embedding the scientific graphing controls as Microsoft Component Object Model (COM) objects into the structure of Windows Forms project-related software assemblies. The use of licensed third-party software components, with the associated restrictions, is the primary reason why MPC Optimisation program code is not intended for open-source distribution. Additionally, newer versions of Bluebit Matrix Library designed to work with present-day versions of .NET Framework, as well as significant code syntax changes applied throughout the projects, would have been required to successfully port the Solution into current versions of Visual Studio, e.g. VS2015 or VS2017. 5. Conclusions In summary, a software package has been described, designed to enable the design and optimization of 1D magnetic photonic crystals in terms of the achievable combinations of Faraday rotation, transmission and reflection spectra. The same package allows computational modelling of the optical spectral properties of various dielectrics-based generic single- and multilayer thin films. Additional program features include the tools for fitting of the experimentally-measured transmission or reflection spectra to theoretical models, allowing the film physical thickness data recovery, if detailed refractive index information is available. Fitting of the absorption coefficient spectra in absorbing material layers is possible, using an automated algorithm reliant on the data for the measured transmission spectrum, refractive index spectrum, and physical thickness. Notes The authors declare no competing financial interest. Acknowledgments This work was supported by Edith Cowan University. References [1] S. Kharratian, H. Urey, and M. C. Onbaşlı, RGB magnetophotonic crystals for high-contrast magnetooptical spatial light modulators, Sci.Rep. 9:644, DOI:10.1038/s41598-018-37317-9, 2019. [2] Q. Du, T. Fakhrul, Y. Zhang, J. Hu, and C. A. Ross, Monolithic magneto-optical oxide thin films for on-chip optical isolation, MRS Bulletin, vol. 43, 413-418, 2018. [3] Y. Shoji, and T. 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Magn., vol. 38, no. 5, pp. 3246 -- 3248, 2002. [13] H. Kato et al., "Effect of optical losses on optical and magneto-optical properties of one-dimensional magnetophotonic crystals for use in optical isolator devices," Opt. Commun., vol. 219, no. 1 -- 6, pp. 271 -- 276, 2003. [14] A. K. Zvezdin and V. I. Belotelov, "Magnetooptical properties of photonic crystals," Eur. Phys. J. B, vol. 37, no. 4, pp. 479 -- 487, 2004. [15] A. Brataas, A. D. Kent, and H. Ohno, Current-induced torques in magnetic materials, Nature Materials, vol. 11, no. 5, pp. 372 -- 381, 2012. [16] S. Kahl,"Bismuth iron garnet films for magneto-optical photonic crystals," Ph.D. dissertation, Dept. Condensed Matter Physics/KTH, Royal Inst. Technol., Stockholm, Sweden, 2004, Ch. 6. [17] V. I. Belotelov and A. K. Zvezdin, "Magneto-optical properties of photonic crystals," J. Opt. Soc. Amer. B, Opt. Phys., vol. 22, no. 1, p. 286, 2005. [18] M. Vasiliev, K.E. Alameh, V.I. Belotelov, V.A. Kotov and A.K. Zvezdin, Magnetic photonic crystals: 1-D optimization and applications for the integrated optics devices, IEEE J. Lightwave Technol. 24 (2006), 2156-2162. [19] M. Vasiliev, M. Nur-E-Alam, V.A. Kotov, K. Alameh, V. I. Belotelov, V. I. Burkov and A. K. Zvezdin, RF magnetron sputtered (BiDy)3(FeGa)5O12:Bi2O3 composite materials possessing record magneto-optic quality in the visible spectral region, Optics Express, 17(2009), 19519-19535. [20] M. Nur-E-Alam, M. Vasiliev and K. Alameh, Nano-structured magnetic photonic crystals for magneto-optic polarization controllers at the communication-band wavelengths, Opt. Quant. Electron. 41(2009), 661-669. [21] M. Nur-E-Alam, M. Vasiliev and K. Alameh, High-performance RF-sputtered Bi-substituted iron garnet thin films with almost in-plane magnetization, Optical Materials Express 7(2017), 67. [22] V.A. Kotov, V.G. Shavrov, M. Vasiliev, K. Alameh, M. Nur-E-Alam, D.E. 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1802.01645	1	1802	2017-12-03T09:00:53	Semi-Transparent Solar Cell enabled by Frequency Selective Light Trapping	[ "physics.app-ph", "physics.optics" ]	We propose a frequency selective light trapping scheme that enables the creation of more visually-transparent and yet simultaneously more efficient semitransparent solar cells. A nanoparticle scattering layer and photonic stack back reflector create a selective trapping effect by total internal reflection within a medium, increasing absorption of IR light. We propose a strong frequency selective scattering layer using spherical TiO2 nanoparticles with radius of 255 nm and area density of 1.1% in a medium with index of refraction of 1.5. Using detailed numerical simulations for this configuration, we find that it is possible to create a semitransparent silicon solar cell that has a Shockley Queisser efficiency of 12.0%\pm0.4% with a visible transparency of 60.2%\pm1.3%, 13.3%\pm1.3 more visibly-transparent than a bare silicon cell at the same efficiency.	physics.app-ph	physics	Semi-Transparent Solar Cell enabled by Frequency Selective Light Trapping Duncan C. Wheeler1, Yichen Shen∗1, Yi Yang12, Svetlana V. Boriskina3, Yi Huang3, Ognjen Ilic4, Gang Chen3, Marin Soljaci´c 1 We propose a frequency selective light trapping scheme that enables the creation of more visually- transparent and yet simultaneously more efficient semitransparent solar cells. A nanoparticle scat- tering layer and photonic stack back reflector create a selective trapping effect by total internal reflection within a medium, increasing absorption of IR light. We propose a strong frequency selec- tive scattering layer using spherical TiO2 nanoparticles with radius of 255 nm and area density of 1.1% in a medium with index of refraction of 1.5. Using detailed numerical simulations for this con- figuration, we find that it is possible to create a semitransparent silicon solar cell that has a Shockley Queisser efficiency of 12.0%± 0.4% with a visible transparency of 60.2%± 1.3%, 13.3%± 1.3% more visibly-transparent than a bare silicon cell at the same efficiency. As the world experiences growing demand for en- ergy, the cost of non-renewable energy, both financially and environmentally, becomes increasingly apparent [1]. Consequently, new techniques in renewables have gar- nered increased attention. Recent studies have examined building-integrated photovoltaics as one way to increase renewable energy generation in urban environments [2]. Semitransparent solar cells are essential to the success of building-integrated photovoltaics, as they can be in- stalled in window locations to generate energy while pre- serving room lighting on building sides. However, semi- transparent solar cells typically have low efficiency; they must become more efficient and transparent before they can become widely adopted. In this paper, we propose a frequency selective light trapping scheme that enables improved performance of semitransparent solar cells [3]. I. BACKGROUND Designing semitransparent solar cells leads to an in- herent trade-off between transparency and efficiency, as transmitted light cannot be converted to energy. How- ever, human eyes are only sensitive to a small range of the electromagnetic spectrum. Acknowledging this, we work around the efficiency-transparency trade-off. As Figure 1a shows, over half of the incoming photons with energies above the silicon bandgap lie outside the visi- ble spectrum, and mostly in the IR region. While pho- tons in the visible spectrum are more energetic, stan- dard semiconductor solar cells generate one carrier for each absorbed photon above the bandgap, regardless of frequency. Therefore, by tailoring the absorption spec- trum of a standard semiconductor solar cell, such that it absorbs all incoming IR light above the bandgap energy 1 Department of Physics, MIT, USA; E-mail: [email protected], [email protected] 2 Department of Electrical Engineering and Computer Science, MIT, USA 3 Department of Mechanical Engineering, MIT, USA 4 Department of Applied Physics, Caltech, USA while transmitting all visible light, we can theoretically achieve a 100% visibly transparent solar cell with high efficiencies. A more detailed calculation of this theoreti- cal limit shows that the Shockley Queisser efficiency limit for such a transparent solar cell is 21%, almost two thirds that of normal single junction semiconductor solar cells [4]. While semitransparent solar cells could, in principle, reach reasonably high efficiencies, existing technologies are limited by multiple constraints. The most efficient current strategy, seen in Figure 1b, reaches up to 10% effi- ciency, but remains relatively opaque. These cells consist of traditional semiconductor solar cells with gaps etched into their surfaces. Such a layout produces a screen-porch like effect where enough light passes through that human eyes can see an image, but the resulting image is blurred and darkened, making the presence of a solar cell obvi- ous. Because these cells fail to distinguish between visible and non-visible light, they truly are limited by a trade-off between transparency and efficiency. Other semitransparent solar cells include organic so- lar cells, quantum dot solar cells, and transparent lumi- nescent solar concentrators (TLSC). Figure 1c shows a cell where the active material itself is designed to absorb non-visible light only, such as a semitransparent organic cell or quantum dot cell. Figure 1d illustrates a TLSC where molecular dyes absorb incoming non-visible light and re-emit the energy at a shifted frequency, which is then directed by total internal reflection in a waveguide to a standard solar cell. Because these strategies use materials that intrinsically absorb non-visible light, they achieve very high transparencies, as high as 84% in the case of TLSC's [5]. However, each of these strategies face important limitations that reduce their efficiencies to less than 4% [5–10]. Organic cells suffer from limited carrier mobility, reducing their overall efficiency [11]. Quantum Dot cells suffer from incomplete absorption of desired light in addition to poor carrier mobility [12].TLSC's can in principle reach high efficiencies; however, surface losses in the waveguide and re-absorption losses in the dyes lead to efficiency losses that are difficult to avoid [13]. 2 FIG. 1: Existing transparent solar cell technology. (a) Incoming photon flux from the sun divided into UV, Visible, and IR light above the silicon bandgap. (b) A semitransparent cell made from an etched standard cell. (c) A semitransparent cell with a frequency selective active layer. (d) A semitransparent luminescent solar concentrator which guides down-converted light to standard solar cells II. CONCEPT In this paper, we propose an approach to improve semi- transparent solar cells through frequency selective light trapping. The basic design consists of a semitransparent active layer placed between a frequency selective scat- tering layer on top and a frequency selective reflective layer on bottom. The scattering and reflective layers trap the IR light, leading to an increased path length through the active layer of the solar cell between them. At the same time, visible light passes through the fre- quency selective layers and semitransparent active layer largely unaffected. Such a system increases the efficiency of semitransparent solar cells without decreasing their transparencies. Conversely, we can use more transparent solar cells without loss of efficiency, allowing us to explore ultra-thin semiconductors as semitransparent active lay- ers with strong carrier properties. In principle, our light trapping scheme works similar to those used for current ultra-thin photovoltaics. While many different light trapping techniques exist, one com- mon method relies on randomly textured surfaces that scatter light isotropically [14, 15]. When light isotropi- cally scatters inside a medium, internal reflection traps most photons inside the medium, increasing light con- centration. This is the basis for the Yablonovitch limit on light trapping and for our method of frequency selec- tive light trapping [16]. Using a layer of nanoparticles designed to isotropically scatter IR light, we trap such light through total internal reflection. By using a fre- quency selective mirror on the back surface of our system, we reduce escape cone losses to only the top surface. II.1. Active Layer To evaluate our design, we first consider the active layer. This layer generates the energy in our setup and can be any semitransparent solar cell. We consider two main options for the active layer, first of which are ultra- thin semiconductors. Using the absorption coefficient of silicon along with the Beer-Lambert law, we find that a silicon layer with a thickness on the order of 800nm or less is needed for a visible transparency of 60% or more [17]. Similarly, a Gallium Arsenide (GaAs) layer of 75nm thickness or less gives a visible transparency of 60% or more [18]. By comparing these two materials along with other semiconductors, we find that silicon's low absorp- tion allows it to more easily be made visibly transparent than the other active layer materials we consider. In ad- dition, silicon's absorption coefficient remains relatively high well into the IR spectrum, enabling more effective 3 near ideal frequency selective reflectors using more com- plicated structures. Therefore, we assume a perfect fre- quency selective reflector in the calculations that follow.5 Using a perfect reflector, we then consider the scattering layer, which creates the IR light trapping effect. III. SCATTERING LAYER OPTIMIZATION To determine the best design of the scattering nanopar- ticles, we perform a global optimization using the Multi-Level Single-Linkage (MLSL) algorithm running a BOBYQA local optimization algorithm, both imple- mented by NLopt, a free nonlinear optimization library [21–23]. We consider four main parameters that charac- terize the layer. As shown in Figure 3b, these parameters are nanoparticle material index, radius (r), and area den- sity (n) in addition to medium index. The material and radius determine how each nanoparticle scatters light, and are primarily responsible for creating the resonance we aim for. The area density (n = cell area / [π ∗ r2 ∗ # of particles]) determines nanoparticle separation and how the scattering layer acts overall given the behavior of individual particles. We assume that the nanoparticles are deposited in a single layer, and will therefore only scatter a light ray once each time the ray passes through the scattering layer. Finally, the medium index controls the escape angle as well as the index contrast between the medium and the nanoparticles, affecting both light scat- tering and light trapping. To account for all parameters, we perform our optimization several times over nanopar- ticle radius and area density while manually varying the nanoparticle material and medium index between each run. For nanoparticle material, we consider Ta2O5, sil- ver, gold, and TiO2. We then choose the material and medium index that give the best optimized figure of merit (FOM). III.1. Defining a Figure of Merit To quantify the performance of our light trapping scheme, we use a figure of merit that characterizes the system as one which allows us to use a more transparent cell without losing efficiency. Our optimization figure of merit can be written as below: FOM = 60% − Tbare. (1) Tbare represents the transparency of a bare active layer when it achieves the same efficiency that our frequency selective light trapping system achieves with a trans- parency of 60%. Because we define our figure of merit this 5 Possible behavior of a non-ideal reflector can be found in Ap- pendix A FIG. 2: Model for semitransparent solar cell using frequency selective light trapping. A very thin active layer absorbs little light. Nanoparticles and a 1-D photonic crystal create a frequency light trapping effect, increasing IR path lengths through the active layer and resulting in stronger absorption. absorption of non-visible light. The second active layer option we consider are quan- tum dots. While quantum dot solar cells face low effi- ciencies regardless of their transparency, they are rela- tively easy to make initially transparent and are there- fore useful to consider for future experiments to verify the effectiveness of frequency selective light trapping. Specifically, we use data for tetrabutylammonium iodide (TBAI)-exchanged PbS films to model the active layer [19]. While quantum dots solar cells do not form a flat sheet like semiconductor solar cells, we model the active layer as a sheet of PbS-TBAI with a set thickness to de- termine the amount of active layer material that would result in a high transparency. Again, by using active layer absorption coefficients with the Beer-Lambert Law, we find that a PbS-TBAI thickness of around 45nm pro- vides a visible transparency of 60%. II.2. Frequency Selective Reflector After selecting active layer compositions, we consider the reflecting layer. For our design, we aim for a per- fect frequency selective mirror that transmits all visible light while reflecting all IR light. Ilic et al. designed and fabricated a thin-film multilayer stack with 2 materials to reflect IR light while transmitting visible light for the purpose of improving the efficiency of incandescent light sources. This structure reached 92% reflectance over a wide range of angles and frequencies in the IR spectrum [20]. Ilic et al. also showed the possibility for making 4 FIG. 3: Results of single layer nanoparticle optimization. (a) The scattering and absorption cross sections of a single TiO2 nanoparticle of 255 nm radius, with a broad IR resonance peak. (b) Diagram of optimized scattering layer with each optimization parameter labeled. way, we must calculate the efficiency and transparency of our system at different active layer thicknesses. To find these efficiencies and transparencies, we first find the scattering and absorption cross section of in- dividual nanoparticles. Using Mie Scattering Theory, we calculate the scattering of a plane wave expressed in terms of the spherical harmonics with angular momen- tum number up to 15th order to account for all dominant terms and determine the nanoparticle cross section [24]. We then use the Beer-Lambert law to convert the scat- tering and absorbtion cross sections (σs and σa), along with particle area density (n), into normalized scattering and absorption probabilities (Ps and Pa) for the whole scattering layer as follows: Ps = 1 − e−n(σs+σa) 1 + 1−e−nσa 1−e−nσs and Pa = 1 − e−n(σs+σa) 1 + 1−e−nσs 1−e−nσa . (2) This equation assumes a single layer of nanoparticles and therefore only considers a single possible scattering or absorption event each time a light ray passes through the scattering layer. By limiting the area density to less than 30%, we increase the likelihood of having indepen- dent scattering events. After our optimization, we then double check to ensure that the cross section areas of the optimized nanoparticles do not overlap, ensuring that the scattering events are independent. III.2. Ray Trace to Find Absorbed Photon Flux Having characterized the scattering layer, we perform a Monte Carlo ray tracing calculation to determine our final FOM. We consider a set of photons entering the top of our solar cell at normal incidence. When a pho- ton passes through the scattering layer, it scatters or is absorbed with probabilities obtained from our Mie scat- tering calculations above. If the photon scatters, we as- sume isotropic scattering, becuase the light will scatter off a single nanoparticle without interacting with other nanoparticles in the scattering layer. As a reult, we as- sign a random direction to the scattered photon. While our ray tracing is 3 dimensional, only the angle of the ray from normal incidence effects our result. Therefore, we convert the isotropic solid angle distribution to a sin- gle angle, defined from vertical, using a sine distribution, making our ray tracing 2 dimensional. We generate a sine distribution by using equation (3) to convert a random number between 0 and 1, R, to the scattering angle, θ. θ = arccos(1 − 2 ∗ R) (3) When a photon passes through the active layer, we de- termine the path length of the light through the active by dividing the active layer thickness, T, by the sine of the angle from horizontal, as in equation (4). Path Length = T sin(θ − π 2 ) (4) We sum these path lengths for individual photons to track the total path length of each photon through the active layer for later calculations. When a photon en- counters the reflective layer at the bottom of the cell, we check for total internal reflection for visible wavelengths and assume perfect reflection for all other wavelengths. Similarly, when a photon hits the top of the cell, we check for total internal reflection for all wavelengths. If a pho- ton is reflected, we flip the direction by setting the new angle to π minus the old angle. The ray trace contin- ues for each photon with an additional scattering every time the photon interacts with the scattering layer until that photon is absorbed by the scattering layer or escapes from either surface. To evaluate our FOM, we perform the ray trace de- scribed above for 1000 photons each over vacuum wave- lengths spaced by 10nm starting at 280nm and continuing to 1450nm, which is above the silicon bandgap. From the total path lengths calculated, we determine the average path length of each wavelength through the active layer. By using the Beer-Lambert law we then determine the absorption of our system for each wavelength. Integrat- ing the absorption over the solar spectrum, we calculate the total absorbed incoming photon flux [25]. Similarly, by tracking the fraction of visible photons that escape through the back surface, we multiply this fraction by the non-absorbed photon flux in the visible spectrum to obtain the visible transparency of our system. Some of the light accounted for in this transparency was scat- tered by the scattering layer and might lead to a blurred image, resulting in the solar cell being just translucent rather than transparent [26, 27]. When we only consider non-scattered light and calculate in-line transparency, we find a decrease of roughly 3 percentage points, from 60% transparency to 57% in-line transparency, leading to a roughly 5% haze. This is similar to the effects observed in some attempts to create tunable windows [27]. To simplify our calculations we make two approxima- tions. First, the parameters that effect our ray trace are the scattering and absorption probabilities of the scatter- ing layer along with the refraction index of the medium. Therefore, rather than performing the ray trace over each wavelength for each nanoparticle radius and area density, we perform the ray trace for a set of absorption and scat- tering probabilities in two cases: visible and non-visible wavelengths. We then interpolate the results to quickly access the behavior of our system given the absorption and scattering probability determined by our Mie scat- tering calculations. Second, the path length of a photon through the active layer scales linearly with the active layer thickness. Therefore, rather than repeating a ray tracing calculation for new active layer thicknesses, we multiply the average path lengths of our original ray trac- ing calculation by the ratio of active layer thicknesses to obtain new average path lengths and quickly determine new absorptions and transparencies. 5 III.3. Efficiency Calculation and Final FOM We calculate two different efficiencies from our ab- sorbed photon flux, ultimate efficiency and Shockley Queisser efficiency. Ultimate efficiency assumes that every absorbed photon is converted perfectly into the bandgap energy. To calculate ultimate efficiency, we mul- tiply the absorbed photon flux by the bandgap energy of silicon and divide by the total integrated power of the AM 1.5 solar spectrum [25]. Shockley Queisser efficiency provides an efficiency limit accounting for radiative re- combination, more accurately reflecting real world behav- ior [28]. We base our Shockley Queisser calculations off those performed by Ruhle, which perform a discrete cal- culation and can use interpolated absorption data from our Monte Carlo simulation [29]. The original Shockley Queisser calculation assumed an absorption of 1 for fre- quencies above the band gap and 0 for frequencies below the bandgap. We also assume an absorption of 0 be- low the silicon bandgap, but we interpolate absorptions calculated through the ray tracing above to obtain non- unity absorptions at frequencies above the bandgap. With the efficiency and transparency of our system as a function of thickness, we then evaluate our FOM, as in equation (1). Figure 4 visualizes this FOM by plot- ting the calculated transparencies and efficiencies of our system against active layer thickness along with those values for a bare active layer, which gives the base effi- ciencies. We determine the thickness at which our system reaches a transparency of 60%, find the corresponding ef- ficiency, determine the thickness at which a bare active layer has the same efficiency, and compare the resulting transparency with our system's 60% transparency. As seen in Figure 4, different efficiency calculations give different FOM results. Figure 4a shows a trans- parency improvement of 18.2 ± 1.3 percentage points, from 42.0% to 60.2%, when using ultimate efficiency, while Figure 4b shows a transparency improvement of 13.3 ± 1.3 percentage point, from 46.9% to 60.2%, when using Shockley Queisser efficiency. This reduction re- flects the higher absorption of our system when com- pared to a bare cell, which leads to higher radiative losses. However, while our improvement decreases with more re- alistic efficiency estimates, our frequency selective light trapping scheme still shows the potential to substantially improve the performance of existing semi-transparent so- lar cell systems. IV. RESULTS Our optimization results, shown in Figure 3, find that spherical TiO2 nanoparticles with a radius of 255 nm and an area density of 0.11 in a medium with index of refrac- tion of 1.5 establish strong frequency selective light trap- ping. The scattering and absorption cross sections, seen in Figure 3a, show desired characteristics. A broad peak in the IR spectrum provides necessary scattering for in- 6 FIG. 4: Improvement in transparency at same efficiency due to frequency selective light trapping, (a) using ultimate efficiency and (b) using Shockley Queisser efficiency creased efficiency, while a dip in the scattering cross sec- tion around the visible spectrum maintains transparency. In addition, TiO2 gives low absorption across all frequen- cies, which prevents unnecessary loss of light that would impact both efficiency and transparency. Other mate- rials we considered (silver, gold, and Ta2O5) have high absorptions that reduce both transparency and efficiency, resulting a low FOM. In addition to our calculations for a medium with index of 1.5, we find that increasing indices of refraction leads to increased performance due to increased light trapping. We present in Table I our results for an index of 1.5 to represent more realistic material properties as well as an index of 1.8 to demonstrate this increased improvement. TABLE I: Figure of Merit Results at 60% Transparency Medium Index Crystalline Silicon Quantum Dot 2.0% ± 1.1% 5.6% ± 1.2% 13.3% ± 1.3% 16.1% ± 1.5% 1.5 1.8 Table I shows the result of performing our FOM cal- culation using Shockley Queisser efficiency for each com- bination of active layer and medium index. From our re- sults we can make a couple important observations. First, increasing the index medium from 1.5 to 1.8 increases the FOM. For a medium index of 1.8, our optimization re- sults find that spherical TiO2 nanoparticles with a radius of 309nm and area density of 0.149 work best. With a higher index, the index difference between the medium and nanoparticles decreases, leading to decreased scatter- ing. At the same time, light that is scattered will be more easily trapped, which offsets the decreased scattering and leads to increased absorption. Overall, this increased ab- sorption increases efficiency more than it decreases trans- parency, leading to an improved FOM. In addition, we observe that a quantum dot active layer shows a lower FOM than silicon.6 Using our results for crystalline silicon in a medium of index 1.5 as the best performing, most realistic re- sults, we determine the potential of our frequency selec- tive light trapping model. Such a cell gives a Shockley Queisser efficiency of 12.0% ± 0.4% with a transparency of 60.2% ± 1.3% and a 5% haze. This is substantially more transparent than etched solar cells and shows the potential of being more efficient than the 4% efficiency of organic cells. Furthermore, we only considered single material spherical nanoparticles for our optimization. By considering multi-material, layered nanoparticles, we be- lieve that it will be possible to obtain more effective res- onances, opening up the possibility of creating far more effective semitransparent solar cells in the future. V. CONCLUSION We demonstrated the effectiveness of a frequency selec- tive light trapping scheme using a nanoparticle scattering layer and photonic stack reflective layer. We performed an optimization to determine the best scattering layer design while using a ray tracing calculation to determine a useful figure of merit. Our results show that we can use 6 A discussion of additional results obtained when considering the effects of graphene contacts can be found in Appendix B 7 silicon to create effective semiconductor based semitrans- parent solar cells with both high efficiencies and high transparencies. Creating a 420nm thick crystalline silicon solar cells was not in the scope of this research, but some relevant experimental researches have been carried out previously [30, 31]. For this paper, we only optimized for spherical, single material nanoparticles. By performing further optimizations that account for layered nanopar- ticles, we believe that the performance of our light trap- ping scheme will improve. In addition, with the ability to create thin enough crystalline silicon solar cells, our light trapping scheme can create semitransparent solar cells with high efficiency and visible transparency. This frequency light trapping scheme can be used to increase the efficiency of any semitransparent solar cell, including those that use the methods described in Section I. This can be accomplished by replacing the active layer with an existing semi-transparent solar cell technique, such as an organic cell. ACKNOWLEDGMENTS FIG. 5: Reflectance of Simple Frequency Selective Filter Research supported as part of the Army Research Of- fice through the Institute for Soldier Nanotechnologies under contract no. W911NF-13-D-0001 (photon man- agement for developing nuclear-TPV and fuel-TPV mm- scale-systems). Also supported as part of the S3TEC, an Energy Frontier Research Center funded by the US Department of Energy under grant no. DE-SC0001299 (for fundamental photon transport related to solar TPVs and solar-TEs). This work was also supported in part by the MRSEC Program of the National Science Founda- tion under award number DMR - 1419807. This work was also funded in part by the MIT Undergraduate Re- search Opportunity Program (UROP) and through a summer UROP sponsored by MIT Energy Initiative Af- filiate Member Alfred Thomas Guertin PhD '60. did not go so far as to incorporate the reflector into our Monte Carlo simulation, these numbers show very promising behavior for a simple two material design. In addition, by separating the reflector from the rest of the solar cell by an air gap, we can use total internal re- flection to trap any light outside of the escape cone of the medium material surrounding the active layer. To improve upon this further, more materials can be used along with a figure of merit that prioritizes relevant an- gles. With such factors, the behavior of a filter can be expected to improve dramatically and impact the behav- ior of the transparent cell minimally. Appendix B: Transparent Graphene Contacts Appendix A: Frequency Selective Reflector To better understand how close to ideal a frequency selective filter might be, we performed a quick optimiza- tion. Using two materials, TiO2 and SiO2, in air, we found a multilayer structure to maximize reflection in the IR spectrum (800 - 1100nm) while minimizing re- flection in the Visible spectrum (400 - 700nm), leaving the 700 - 800nm range for a transition between low and high reflectance. In addition, the design maintains these properties for a wide range of angles. Figure 5 shows the reflectance of the reflector design for 0, 15, 30, 45, and 60 degrees of incidence. When averaging the reflectance for 400 - 700nm at each of the angles mentioned above, we find 5.9%, 5.3%, 4.3%, 5.4%, and 13.9% respectively. When averaging the re- flectance for 800 - 1100nm at each angle, we find 97.8%, 98.4%, 98.9%, 98.5%, and 96.9% respectively. While we For our main calculations we assume ideal transpar- ent contacts. For a more realistic result, we briefly con- sider possible contact materials. ITO, a standard trans- parent conductor does not work well for our design as ITO has high absorption in the IR spectrum, and would dramatically decrease efficiency. Rather, we must find a conductor with low absorption across a broad range of the electromagnetic spectrum. Therefore, as a promising transparent contact, we consider using graphene which has a nearly consistent 2.3% absorption coefficient over the frequencies we consider [8, 32]. To determine the effect of a graphene contact, we include an extra 2.3% chance of absorption in our ray trace calculation every time a photon enters or exits the active layer. We also add a 2.3% chance of absorption to all light entering and leaving the bare cell configuration to establish an effec- tive comparison for the FOM. Our ray tracing calculations, including graphene loss, TABLE II: Figure of Merit Results At 60% transparency With Graphene Active Layer Material Crystalline Silicon Quantum Dot 7.77% ± 1.44% 0.03% ± 0.57% Medium index of 1.5 with contact loss Medium index of 1.8 with contact loss 7.03% ± 1.65% 0.42% ± 0.68% give results, shown in Table II, reveal a dramatic decrease in our FOM. While the graphene also decreases the ef- ficiency and transparency of the bare cell, it creates a larger effect in the light trapping scheme as individual rays pass through the graphene many times. Addition- ally, the lower medium index now gives a higher FOM than the larger medium index. This reflects the effects of a smaller escape cone. With a higher index, light that is scattered at all will be more easily trapped, leading to 8 a higher efficiency with low contact losses. However, this also means that more IR light will be absorbed through contact loss with a higher medium than a lower medium. 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1909.10671	1	1909	2019-09-24T01:14:06	Core-Shell Nanofiber Containing Large Amount of Flame Retardants via Coaxial Dual-Nozzle Electrospinning as Battery Separators	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	Lithium-ion batteries have attracted enormous interests recently as promising power sources. However, the safety issue associated with the employment of highly flammable liquid electrolyte impedes the further development of next-generation lithium-ion batteries. Recently, researchers reported the use of electrospun core-shell fiber as the battery separator consisting of polymer layer as protective shell and flame retardants loaded inside as core. In case of a typical battery shorting, the protective polymer shell melts during thermal-runaway and the flame retardants inside would be released to suppress the combustion of the electrolyte. Due to the use of a single precursor solution for electrospinning containing both polymer and flame retardants, the weight ratio of flame retardants is limited and dependent. Herein, we developed a dual-nozzle, coaxial electrospinning approach to fabricate the core-shell nanofiber with a greatly enhanced flame retardants weight percentage in the final fibers. The weight ratio of flame retardants of triphenyl phosphate in the final composite reaches over 60 wt.%. The LiFePO4-based cell using this composite nanofiber as battery separator exhibits excellent flame-retardant property without compromising the cycling stability or rate performances. In addition, this functional nanofiber can also be coated onto commercial separators instead of being used directly as separators.	physics.app-ph	physics	Core-Shell Nanofiber Containing Large Amount of Flame Retardants via Coaxial Dual-Nozzle Electrospinning as Battery Separators Yun Zhao 1,, Yuqing Chen 1, Yuqiong Kang 1, Li Wang 1, Shaobin Yang 2, Zheng Liang 3, and Yanxi Li 3,* 1 Institute of Nuclear & New Energy Technology, Tsinghua University, Beijing 100084, China; [email protected] 2 College of Materials Science and Engineering, Liaoning Technical University, Fuxin 123000, China 3 Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA; [email protected] * Correspondence: [email protected] (Y.Z.); [email protected] (Z.L.); [email protected] (Y.L.) Abstract: Lithium-ion batteries have attracted enormous interests recently as promising power sources. However, the safety issue associated with the employment of highly flammable liquid electrolyte impedes the further development of next-generation lithium-ion batteries. Recently, researchers reported the use of electrospun core-shell fiber as the battery separator consisting of polymer layer as protective shell and flame retardants loaded inside as core. In case of a typical battery shorting, the protective polymer shell melts during thermal-runaway and the flame retardants inside would be released to suppress the combustion of the electrolyte. Due to the use of a single precursor solution for electrospinning containing both polymer and flame retardants, the weight ratio of flame retardants is limited and dependent. Herein, we developed a dual-nozzle, coaxial electrospinning approach to fabricate the core-shell nanofiber with a greatly enhanced flame retardants weight percentage in the final fibers. The weight ratio of flame retardants of triphenyl phosphate in the final composite reaches over 60 wt.%. The LiFePO4-based cell using this composite nanofiber as battery separator exhibits excellent flame-retardant property without compromising the cycling stability or rate performances. In addition, this functional nanofiber can also be coated onto commercial separators instead of being used directly as separators. Keywords: lithium ion battery; safety; flame retardant; separator; electrospun fibers; dual-nozzle coaxial electrospinning 1. Introduction Lithium-ion battery (LIBs) has been considered as one of the most promising energy-storage devices recently [1]. Although its energy density keeps increasing, battery safety is the prerequisite for the further development and commercial realization [2-8]. The conventional LIBs use flammable organic liquid electrolytes such as ethylene carbonate (EC), diethyl carbonate (DEC), and dimethyl carbonate (DMC), leading to severe safety hazards (for example, fires and explosions). In the case of short circuits, undesirable exothermic reactions from electrolyte decomposition will cause a rapid increase in battery temperature as well as thermal runaway. The high temperature will cause the ignition of the flammable electrolyte, eventually leading to fires or explosions. And this problem will be even magnified with the use of next-generation high energy density LIBs [9-11]. Considerable efforts have been devoted to tackle the aforementioned issues, including the utilization of: (1) non-flammable organic electrolytes or co-solvent [12-18]; (2) high concentration electrolytes [19-21]; (3) electrolytes additives [22-25]. Generally, the non-flammable electrolytes and co-solvents are based on fluorinated, phosphate and ionized liquids, which have high viscosities, low solubility of salts, and are incompatible with common anode materials [19-20], resulting in the poor electrochemical performances when used as LIB electrolytes. Moreover, high concentration electrolytes always suffer from much higher viscosity, lower ionic conductivity and high costs, hindering its practical applications [19]. So far, the most efficient and economical strategy is to add flame-retardant electrolyte additives to lower the risk of fires or explosions [26-28]. However, this improvement of battery safety is on the cost of battery performances since the presence of large amount of flame retardants in the electrolyte would significantly lower the ionic conductivity [29]. Therefore, developing a method to eliminate the trade-off between the safety and the electrochemical performance of the battery is of great importance for further development and practical applications of next-generation LIBs. as the is the [30]. The polymer core shell which Encapsulating flame retardants into separator provides a novel strategy. Recently, Cui et al. has developed a novel electrospun core-shell microfiber structure with protective polymer layer as the shell and triphenyl phosphate (TPP), a popular organophosphorus-based flame retardant confined inside poly(vinylidene fluoride -- hexafluoropropylene) (PVDF-HFP), blocks the direct contact of TPP to electrolyte thus preventing any negative effects of TPP on the electrochemical properties of the electrolyte. While the TPP confined inside would be released to the electrolyte in case of a battery thermal-runaway since PVDF-HFP shell would melt as the temperature increases. The released TPP in the electrolyte further suppress the combustion of flammable organic electrolyte. It is worth noting that the amount of TPP plays a key role on the flame-retardant effects [30]. As shown by Cui et al., the flammability of the electrolyte is dramatically reduced with the increasing concentration of TPP. In addition, for a commercial pouch cell, separator only accounts for around 5 wt.% of the total weight, therefore higher TPP percentage in this composite needs to be achieved [30]. However, due to use of a single-nozzle electrospinning from a single precursor solution in Cui's work, the concentration of TPP is limited [30]. Cui et al. demonstrated the fibrous composite with up to 40 wt.% of TPP [30]. Herein, by using a dual-nozzle, coaxial electrospinning method, we developed a flexible fabrication method of core-shell nanofiber with large quantity of TPP up to more than 60 wt.% encapsulated inside as separators for safe LIBs. In addition, the as-prepared fibrous material displays a very uniform flame retardants distribution, with almost no noticeable agglomeration observed. We further tested and confirmed the flame-retardant capability of the electrospun fiber compared with commercial separator. Finally, the constructed half-cell using lithium iron phosphate (LiFePO4) as cathodes, lithium metal as anode, and this electrospun fiber as separator delivered good cycling and rate performance, with a stable specific capacity of 130 mAh g-1 at 1 C. And this indicates the improvement of battery safety is achieved without compromising the battery performances too much. 2. Materials and Methods 2.1. Materials: Poly(vinylidene fluoride-hexafluoropropylene) (PVDF-HFP, average Mw ≈ 455,000, average Mn ≈ 110,000, pellets), dimethylacetamide (DMAc, 99.8%), N-methyl-2-pyrrolidone (NMP, 99.5%) and acetone (99.9%) were purchased from Sigma-Aldrich. TPP was purchased from Energy Chemical. All of these reagents were used without further purification. Electrolyte (1M lithium hexafluorophosphate (LiPF6) dissolved in a mixture of ethylene carbonate (EC) and dimethyl carbonate (DMC) (v/v = 1:1), moisture ≤ 10 ppm), poly(vinylidene fluoride) (PVDF, 99.5%), lithium metal foil (99.9%), copper foil (12 µm, 99.8%), aluminum foil (16 ± 2 µm, 99.54%), carbon black C45 and coin-type cell CR2032 was purchased from MTI Shenzhen Kejing Star Technology. Two types of commercial separators were used in this work. The commercial separator type I is a Celgard 2320 separator with polypropylene (PP)/polyethylene (PE)/PP trilayer and 20-µm thickness. The commercial separator type II is a Celgard 2500 separator with PP layer and 25-µm thickness. 2.2. Methods: Dual nozzle coaxial electrospinning facility was purchased from Changsha Nanoapparatus China, with inner radius 0.18 mm and outer radius 0.59 mm. In order to fabricate desired fibrous materials with high content of flame retardant, the electrospinning precursor solution for polymer shell was prepared by adding 18 wt.% PVDF-HFP in the mixture of DMAc/acetone (w/w = 3:7), then the solution was stirred at room temperature for 6 h, followed by ultrasonic treatment for 30 minutes. Meanwhile, the precursor solution for the core was prepared by dissolving TPP (the mass percentage can be up to more than 60 wt.%) in the mixture of DMAc/acetone (w/w = 3:7). During dual-nozzle coaxial electrospinning, the flow rates of the core and shell solutions were 1.08 mL h-1 and 0.54 mL h-1, respectively, and the needle-to-collector distance was about 15 cm. A high voltage of 15 kV was applied to the nozzle to start the spinning process and the electrospun fibers were collected on a copper foil coated rotating drum (rotational speed was about 150 r/min). The obtained membrane was washed by ethanol and dried at room temperature. 2.3. Characterization: The thermal gravimetric analysis (TGA, Netzsch, STA 409 PC) measurement was carried out in air flow at a heating rate of 10 oC min-1. The morphology and elemental analysis of the fibrous material were characterized by transmission electron microscopy (TEM, Hitachi, HT7700), scanning electron microscopy (SEM, Hitachi, SU-8010) and its energy dispersive spectrometer (EDS, Hitachi, SU-8010). X-ray photoelectron spectroscopy (XPS, ULVAC-PHI, PHI Quantro SXM) was used to characterize the as-prepared samples. 2.4. Electrochemical Characterization: The electrochemical performance was examined using CR2032 coin-type half-cells assembled in an argon-filled glove box with LiFePO4 as the working electrode and lithium foil as the counter electrode. To prepare the LiFePO4 electrode, LiFePO4, Carbon black C45 and PVDF with a mass ratio of 8:1:1 were dissolved in NMP to form a homogeneous slurry. The slurry was coated onto current collector via a common doctor-blade coating method, which was dried in a vacuum oven at 120 oC for 2h. The electrolyte is 1M LiPF6 in a mixture of ethylene carbonate (EC) and dimethyl carbonate (DMC) (v/v = 1:1). The galvanostatic discharge-charge cycling was performed in land system (CT2001A) over a range of applied voltage of 2.5-4.2 V at a constant C-rate of 0.25 C in the first 3 cycles for activation and at 1 C in the following cycles. 2.5. Ignition Experiments: For the ignition experiments, firstly, all the separators/fiber networks were folded four times and clamped with glass plates. Then the electrospun fibers were heated in air from room temperature to 180 oC to release the flame retardants inside. After cooling to room temperature, these fiber networks were wetted by a flammable electrolyte (1 M LiPF6 in a mixture of EC and DMC (v/v = 1:1)). 3. Results Figure 1. Schematic illustration of the coaxial electrospinning process using a dual nozzle. (a) The TPP and PVDF-HFP solutions were injected by syringes into the core and shell channels of the nozzle, respectively. The Taylor cone region was magnified as shown in the box. (b) The as-prepared electrospun fiber consists of TPP as the core and PVDF-HFP as the shell. The confined flame retardants inside the core will be released to dissolve in the electrolyte and suppress the combustion. The fabrication process for our proposed core-shell nanofiber with high content of flame retardants was vividly presented in Figure 1. The dual-nozzle coaxial electrospinning technique was chosen to prepare the core-shell structure. PVDF-HFP as the protective layer was dissolved in a mixture of dimethylacetamide (DMAc)/acetone (w/w = 3:7) while another mixture solution containing TPP was injected into the core channel of the dual nozzle. During electrospinning, TPP solution, as the central part, can be extruded through the inner capillary while the spinnable PVDF-HFP polymer solution is extruded through the outer capillary. The protective polymer is firstly precipitated from the outer solution such that the TPP can be uniformly dispersed and encapsulated in the inner region (Figure 1a). It was worth noting that allowing the shell solution to be extruded firstly was very important to establish a stable Taylor cone for the desired core-shell structure. With a stable Taylor cone, the inner TPP solution could not leak easily to form agglomeration or lead to non-homogeneous distribution in fibers (Figure S1). After the solutions sprayed out from the nozzle tip, as the core and shell solution in contact, PVDF-HFP would be precipitated immediately as a protection layer at the interface, thus preventing the TPP to diffuse from inner to outer solution. Morphology of the as-prepared electrospun fibers with high content of flame retardants was examined by scanning electron microscope (SEM) as shown in Figure 2a-b. Though the diameter of the electrospun fibers ranges from 200 nm to 500 nm, these fibers are very smooth and show almost no agglomeration (Figure 2a-b). In addition, the as-prepared fiber network exhibits excellent flexibility, which was demonstrated by rolling up on a pen and folding several times without any cracks or structural damages (Figure S2). In order to confirm the core-shell structure of our electrospun fibers (noted as TPP@PVDF-HFP), transmission electron microscope (TEM), energy-dispersive X-ray spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) were utilized. As illustrated in Figure 2d, the boundary of the core region and shell region can be clearly observed, indicating the successful encapsulation of TPP core in PVDF-HFP shell. According to our calculation (Figure S3), the polymer shell thickness differs not too much with our observations from the TEM image (Figure 2d). To examine the distribution of flame retardants inside the fiber, EDX and XPS were utilized. The EDX elemental mapping shows the homogeneous distribution of C, F and P, implying uniform distribution of TPP inside PVDF-HFP (Figure 2e). Furthermore, the coexistence of C and F elements from the XPS spectra (Figure 2f) in the composite fiber indicated the existence of PVDF-HFP as the shell, while no peaks of P element was detected, suggesting the successful encapsulation of TPP inside as the core (Figure 2f). In addition, in case of a battery thermal runaway, the outer layer of the fiber network (PVDF-HFP) melts and the inner TPP released into the electrolyte (Figure 2c), and this can be confirmed from the appearance of characteristic peaks of elemental P in the XPS spectrum after thermal runaway (Figure S4), which further proves the core-shell structure of the as-prepared TPP@PVDF-HFP composite fiber. Figure 2. The morphology and compositional characterization of the coaxial electrospun nanofibers. (a) Magnified and (b) low-magnification SEM images of the TPP@PVDF-HFP nanofibers. (c) The morphology of TPP@PVDF-HFP fibers after thermal-runaway. (d) TEM image of the TPP@PVDF-HFP electrospun core-shell fiber. (e) The EDS mapping results of the TPP@PVDF-HFP fibers. (f) The XPS data of the TPP@PVDF-HFP nanofibers before thermal-runaway. (g) TGA results of TPP@PVDF-HFP nanofibers with different amount of flame retardants confined inside. in the electrospun fibers were flame retardant The contents of investigated by thermogravimetric analysis (TGA). Herein, we prepared electrospun core-shell fibers with different amount of flame retardants contained inside by adjusting the concentration of core TPP solution. Theoretically, the concentration of TPP in the core solution can be related to the overall concentration of TPP in the entire composite fiber according to our calculations. Specifically, the TPP concentration in the core solution of 33.3 wt.%, 50.0 wt.% and 66.6 wt.% can be correlated to the final composite fibers with 48 wt.%, 58 wt.% and 65 wt.% weight percentage of TPP (Figure S5). And this calculation matches perfectly with the experimental observation as showed in Figure 2g from the TGA analysis. The TPP showed an obvious weight loss in the range of 250 oC to 330 oC while the decomposition of PVDF-HFP occurred at around 425 oC. For our coaxial electrospun fibers with TPP confined in the PVDF-HFP shell, there are two stages for the weight loss in relevant to TPP and PVDF-HFP decomposition, respectively, demonstrating the successful encapsulation of TPP inside. Figure 3. Digital images showing the examination of flame-retardant properties of various separators/fiber networks by ignition experiment. Images of (a1-a4) display the status just as the ignition starts for TPP@PVDF-HFP fiber network, TPP@PVDF-HFP@commercial separator, commercial Celgard 2320 separator and commercial Celgard 2500 separator, respectively. While images of (b1-b4) represent the corresponding status after ignition. In order to prove the flame-retardant property of the as-prepared core-shell composite fibers, ignition experiments were carried out on our TPP@PVDF-HFP composite fibers compared with two types of commercial separators (Celgard 2320 and Celgard 2500) (Figure 3a-b). In addition, commercial separator (Celgard 2320) was also coated (Figure S6) by TPP@PVDF-HFP composite fibers (denoted TPP@PVDF-HFP@commercial separator) and subjected to the ignition experiments (Figure 3a-b). These separators/fiber networks were wetted by liquid electrolyte of 1 M lithium hexafluorophosphate (LiPF6) in the mixture of EC and DMC (v/v = 1:1), which is the real LIB electrolyte for a pouch cell and then subjected to an ignition. When heated to 180 oC, the PVDF-HFP fibers was broken and TPP would be released. Therefore, when wetted by EC/DMC electrolyte, the flame retardant (TPP) immediately dissolved into electrolyte, converting the flammable electrolyte into a nonflammable liquid. As can be seen from Figure 3b, both TPP@PVDF-HFP and TPP@PVDF-HFP@commercial separator could not be ignited by a lighter, even for several times (Figure 3b1-b2). However, a direct flame could be observed for the commercial separators (two types) with the same electrolyte (Figure 3b3-b4). The full process of ignition experiments for the above four types of fibrous materials can be found in movie S1-S4, respectively. Apparently, coaxial electrospun core-shell fibers with flame retardants contained inside could greatly improve the battery safety and suppress the combustion. The effects of the TPP@PVDF-HFP (30 µm) and TPP@PVDF-HFP@commercial separator (35 µm) on the electrochemical performances of LIBs when used as battery separators were examined in the following section. Figure 4a displays the specific discharge capacity as a function of the cycle number in LiFePO4 cells at 0.5 C. While the cell with TPP@PVDF-HFP as separator exhibited higher specific capacity than that of TPP@PVDF-HFP@commercial separator, both the cells showed good electrochemical cycling stability during the repeating charge and discharge. In addition, both cells could deliver a stable capacity of more than 120 mAh/g on average for over 100 cycles, which is comparable to LiFePO4 cells with normal separators [35]. This good cycling behavior further confirmed that the flame retardants (TPP) was encapsulated inside the PVDF-HFP shell, otherwise the cycling performance would be greatly negatively affected. Cells with these two separators were further subjected to a C-rate test to investigate the rate capability (Figure 4b). Both cells exhibited good rate capabilities, indicating the introduction of the encapsulated TPP has little negative effects on the rate capability. Moreover, with the increase of discharge rate, the Coloumbic efficiency of each cycle gradually declined when using TPP@PVDF-HFP as separator (Figure 4c). Figure 4. Electrochemical performances of the LiFePO4 cells using the as-prepared coaxial electrospun fibers as separators. (a) Cycling of the LiFePO4 half cells over 2.5-4.2 V at a constant C-rate of 0.25 C in the first 3 cycles for activation and at 1 C in the following cycles. (b) Rate performances under the same conditions. (c) The discharge voltage profiles at 0.2 C to 2.0 C. 4. Conclusions In conclusion, we have fabricated an electrospun fibrous material which could either be directly adopted as flame-retardant separator or be coated on a commercial separator for LIBs. This electrospun nanofiber network has a thermal-triggered flame-retardant property for LIBs such that in case of a battery thermal-runaway, it will release its flame-retardant core component out and suppress the combustion of the organic electrolyte. Unlike the previous methods to fabricate the flame retardants containing fibers based on single-nozzle electrospinning from a single precursor solution, our proposed approach involves dual-nozzle coaxial electrospinning out of two different precursor solutions, with one for polymer shell and the other for flame retardants. As a result, the concentration of the flame retardants in the precursor solution is independent of the polymer solution and can be tuned to a relatively high level. The as-prepared core-shell fibers contain a large quantity, more than 60 wt.% of flame retardants out of the entire composite fiber, which is a significant improvement compared with previous versions. Since the nonflammability of the electrolyte would increase drastically with the increasing flame retardants weight ratio, our developed electrospun fibers with more than 60 wt.% enable excellent flame-retarding property. In addition, during normal battery cycling, the outer protective shell confined flame retardants inside and prevent the exposure and dissolution of flame retardants into liquid electrolyte, which otherwise would have negative influence on battery performances. Therefore, when used as battery separators, our developed coaxial electrospun core-shell fibers reduce risks of safety hazards without compromising the battery performance. Supplementary Materials: The following are available online. Figure S1. The morphology of the as-prepared TPP@PVDF-HFP when the Taylor cone was unstable. Figure S2. The test of the flexibility of TPP@PVDF-HFP fiber network by (a) rolling up on a pen or (b) after folding several times. Figure S3. The calculation of dimensions for a single fiber of TPP@PVDF-HFP fiber network. Figure S4. The XPS data of the TPP@PVDF-HFP fiber network after thermal stimuli. Figure S5. The theoretical calculation of overall TPP mass fraction in the TPP@PVDF-HFP fiber network. Figure S6. The SEM image of electrospun nanofibers on the commercial Celgard 2320 separator denoted as TPP@PVDF-HFP@commercial separator. Movie. S1 Full process of ignition experiments on TPP@PVDF-HFP ignition experiments on TPP@PVDF-HFP@commercial separators fibers. Movie. S3 Full process of ignition experiments on commercial separator type I (Celgard 2320). Movie. S4 Full process of ignition experiments on commercial separator type II (Celgard 2500). Author Contributions: conceptualization, Y.Z., L.W. and Z.L.; investigation, Y.L.; data curation, Y.C. and Y.K.; writing -- original draft preparation, Y.Z. and Z.L.; writing -- review and editing, Z.L. and S.Y.; supervision, Y.Z.; Funding: The work was supported by the National Natural Science Foundation of China (No. U1564205), Ministry of Science and Technology of China (No. 2013CB934000, 2016YFE0102200). fibers. Movie. S2 Full process of Acknowledgments: The authors acknowledge the support from ChemDraw software online free version for completing the Figure 1. Conflicts of Interest: The authors declare no conflict of interest. References [1] Miao, Y.; Hynan, P.; Jouanne, A.; Yokochi, A. Current Li-Ion Battery Technologies in Electric Vehicles and Opportunities for Advancements. Energies 2019, 12, 1074. [2] Chen, Z.; Ren, Y.; Lee, E.; Johnson, C.; Qin, Y.; Amine, K. Adv. Energy Mater. 2013, 3, 729-736. [3] Chen, J. Recent Progress in Advanced Materials for Lithium Ion Batteries. Materials 2013, 6, 156 -- 183. [4] Chen, Z.; Hsu, P. C.; Lopez J.; Li, Y. Z.; To, J. W. F.; Liu, N.; Wang, C.; Andrews, S. C.; Liu, J.; Cui, Y.; Bao, Z. N. Nature Energy 2016, 1, 15009. [5] Zhang, S.; Cao, J.; Shang, Y. M.; Wang, L.; He, X. M.; Li, J. J.; Zhao, P.; Wang, Y. W. J. Mater. Chem. A 2015, 3, 17697-17703. [6] Zhao, P.; Yang, J. P.; Shang, Y. M.; Wang, L.; Fang, M.; Wang, J. L.; He, X. M. 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H.; Schroeder, M.; Cresce, A. V.; Russell, S. M.; Armand, M.; Angell, A.; Xu, K.; Wang, C. S. Angew. Chem. Int. Ed. 2016,55,7136-7141. [17] Kalhoff, J.; Eshetu, G. G.; Bresser, D.; Passerini, S. ChemSusChem 2015, 8, 2154-2175. [18] Armand, M.; Endres, F.; MacFarlane, D. R.; Ohno, H.; Scrosati, B. Nature Materials 2009, 8, 621-629. [19] Zhang, H.; Zhou, M. Y.; Lin, C. E.; Zhu, B. K. RSC Adv. 2015, 5, 89848-89860. [20] Dai, J. H.; Shi, C.; Li, C.; Shen, X.; Peng, L. Q.; Wu, D. Z.; Sun, D. H.; Zhang P.; Zhao, J. B. Energy Environ. Sci. 2016, 9, 3252-3261. [21] Sh, C.; Zhang, P.; Huang, S. H.; He, X. Y.; Yang, P. T.; Wu, D. Z.; Sun, D. H.; Zhao, J. B. J. Power Sources 2015, 298, 158-165. [22] Liu, W.; Lee, S. W.; Lin, D. C.; Shi, F. F.; Wang, S.; Sendek, A. D.; Cui, Y. Nature Energy 2017, 2, 17035. [23] Lin, D. C.; Liu, W.; Liu, Y. Y.; Lee, H. R.; Hsu, P. C.; Liu, K.; Cui, Y. Nano Lett. 2016, 16, 459-465. [24] Yue, L. P.; Ma, J.; Zhang, J. J.; Zhao, J. W.; Dong, S. M.; Liu, Z. H.; Cui, G. L.; Chen, L. Q. Energy Storage Materials 2016, 5, 139-164. [25] Wang, L.; Li, N.; He, X. M.; Wan, C. R.; Jiang, C. Y. J. Electrochem. Soc. 2012, 159, A915-A919. [26] Rectenwald, M. F.; Gaffen, J. R.; Rheingold, A. L.;Morgan, A. B.; Protasiewicz, J. D. Angew. Chem. Int. Ed. 2014, 53, 4173-4176. [27] Xiang, H. F.; Xu, H.Y.; Wang, Z. Z.; Chen, C. H. J. Power Sources 2007, 173, 562-564. [28] Zhou, D. Y.; Li, W. S.; Tan, C. L.; Zuo, X. X.; Huang, Y. J. J. Power Sources 2008, 184, 589-592. [29] Zeng, Z. Q,; Jiang, X. Y.; Wu, B. B.; Xiao, L. F.; Ai, X. P.; Yang, H. X.; Cao, Y. L. Electrochimica Acta 2014, 129, 300-304. [30] Liu, K.; Liu, W.; Qiu, Y. C.; Kong, B.; Sun, Y. M.; Chen, Z.; Zhuo, D.; Lin, D. C.; Cui, Y. Sci. Adv. 2017, 3, e1601978. [31] Cho, T. H.; Tanaka, M.; Onishi, H.; Kondo, Y.; Nakamura, T.; Yamazaki, H.; Tanase, S.; Sakai, T. J. Power Sources 2008, 181, 155-160. [32] Xiao, K.; Zhai, Y. Y.; Yu, J. Y.; Ding, B. RSC Adv. 2015, 5, 55478-55485. [33] Teo, W. E.; Ramakrishna, S. Nanotechnology, 2006, 17, R89. [34] Wang, M.; Fang, D. W.; Wang, N. N.; Jiang, S.; Nie, J.; Yu, Q.; Ma, G. P. Polymer 2014, 55, 2188-2196. [35] Satyavani, T.V.S.L.; Kumar, A.S.; Rao, P.S.V.S. Engineering Science and Technology, an International Journal 2016, 19, 178-188. Supplementary Materials Core-Shell Nanofiber Containing Large Amount of Flame Retardants via Coaxial Dual-Nozzle Electrospinning as Battery Separators Figure S1. The morphology of the as-prepared TPP@PVDF-HFP when the Taylor cone was unstable. Figure S2. The test of the flexibility of TPP@PVDF-HFP fiber network by (a) rolling up on a pen or (b) after folding several times. Figure S3. The calculation of dimensions for a single fiber of TPP@PVDF-HFP fiber network. Figure S4. The XPS data of the TPP@PVDF-HFP fiber network after thermal stimuli. Figure S5. The theoretical calculation of overall TPP mass fraction in the TPP@PVDF-HFP fiber network. Figure S6. The SEM image of electrospun nanofibers on the commercial Celgard 2320 separator denoted as TPP@PVDF-HFP@commercial separator. Movies showing the ignition process of various fibrous materials can be found at the link: https://www.dropbox.com/sh/r4zkt962c6ftasq/AABjOpTvhXmiCptYW6feMeAja?dl=0 Movie. S1 Full process of ignition experiments on TPP@PVDF-HFP fibers. Movie. S2 Full process of ignition experiments on TPP@PVDF-HFP@commercial separators fibers. Movie. S3 Full process of ignition experiments on commercial separator type I (Celgard 2320). Movie. S4 Full process of ignition experiments on commercial separator type II (Celgard 2500).
1801.00715	1	1801	2018-01-02T16:38:37	Charge-based superconducting digital logic family using quantum phase-slip junctions	[ "physics.app-ph", "cond-mat.supr-con", "cs.ET" ]	Superconducting digital computing systems, primarily involving Josephson junctions are actively being pursued as high performance and low energy dissipating alternatives to CMOS-based technologies for petascale and exascale computers, although several challenges still exist in overcoming barriers to practically implement these technologies. In this paper, we present an alternative superconducting logic structure: quantized charge-based logic circuits using quantum phase-slip junctions, which have been identified as dual devices to Josephson junctions. Basic principles of logic implementation using quantum phase-slips are presented in simulations with the help of a SPICE model that has been developed for the quantum phase-slip structures. Circuit elements that form the building blocks for complex logic circuit design are introduced. Two different logic gate designs: OR gate and XOR gate are presented to demonstrate the usage of the building blocks introduced.	physics.app-ph	physics	Charge-based superconducting digital logic family using quantum phase-slip junctions Uday S. Goteti and Michael C. Hamilton 1 8 1 0 2 n a J 2 ] h p - p p a . s c i s y h p [ 1 v 5 1 7 0 0 . 1 0 8 1 : v i X r a Abstract-Superconducting digital computing systems, primar- ily involving Josephson junctions are actively being pursued as high performance and low energy dissipating alternatives to CMOS-based technologies for petascale and exascale computers, although several challenges still exist in overcoming barriers to practically implement these technologies. In this paper, we present an alternative superconducting logic structure: quantized charge-based logic circuits using quantum phase-slip junctions, which have been identified as dual devices to Josephson junctions. Basic principles of logic implementation using quantum phase- slips are presented in simulations with the help of a SPICE model that has been developed for the quantum phase-slip structures. Circuit elements that form the building blocks for complex logic circuit design are introduced. Two different logic gate designs: OR gate and XOR gate are presented to demonstrate the usage of the building blocks introduced. Index Terms-Charge-based logic, Josephson junctions, Quan- tum phase-slips, Single-flux-quantum logic, Superconducting nanowires. I. INTRODUCTION E NERGY efficiency for high-performance computing is a growing concern, especially in realizing peta-scale and exa-scale computers [1]. Single-flux quantum logic families based on Josephson junctions are actively being pursued as an alternative to CMOS technologies to overcome these problems [2], although several challenges are yet to be overcome [3]. In this paper, we introduce a quantized charge-based super- conducting logic family using quantum phase-slip junctions (QPSJs), as an alternative to JJ-based SFQ circuits, which may overcome these challenges by having advantages such as voltage biasing and simpler design while including all the benefits of SFQ circuits. Quantum phase-slip is a superconducting phenomenon where the phase difference across a one dimensional nanowire changes by 2π with the suppression of the superconducting order parameter to zero. This has been observed as a resistance tail below superconducting transition in experiments [4], [5], [6]. This phenomenon has been identified as dual to Josephson tunneling based on charge-flux duality [7]. A charge tunnels between two superconducting regions, across an insulating barrier, in a Josephson junction, inducing a flux quantum in the corresponding loop. A QPSJ can be viewed as flux tunneling across a superconducting nano-wire (barrier for flux) creating a voltage drop at the ends of the wire [8]. Therefore, under the appropriate operating conditions, QPSJs can be configured to Uday S. Goteti and Michael C. Hamilton are with the Department of Electrical and Computer Engineering, Auburn University, Auburn, AL, 36830 USA e-mail: [email protected] Manuscript received December 29, 2017. generate quantized-area current pulses analogous to constant- area voltage pulses in SFQ circuits [9]. We have developed a SPICE model for QPSJs based on a dual model to JJs [10] and demonstrated in simulations, the constant-area pulses that demonstrate quantized charge transport, corresponding to a Cooper pair in QPSJs. In order to implement logic circuits with these devices, a charge-island circuit element, analogous to an SFQ loop [9], [11], [12], [13], [14], has been implemented, based on single-charge transistor circuits [15], [16]. In the next section, the basic circuit elements for charge- based superconducting logic are presented along with design and operation requirements that can be expected to produce and manipulate the quantized-charge pulses. These circuits represent the building blocks, that, when used together in dif- ferent combinations, can form various logic gates that can be used to scale-up the logic operations to perform more complex computations. Finally, the design examples and simulation results of some of the logic gates using the basic components is presented. II. LOGIC CIRCUIT ELEMENTS The current pulses representing Cooper pair transport across the phase-slip center in the superconducting nanowire form the logic bits, with the presence of the pulse representing logic "1" and absence of the pulse representing logic "0". When a QPSJ is operated below its critical voltage VC, the current through the device is zero, and the phase-slip center acts as an insulating barrier between the two electrodes of the device. As an input voltage pulse above the critical voltage is applied to an over-damped QPSJ, an electron pair tunnels across the phase- slip center generating a current pulse with a constant area equal to the charge of two electrons. Therefore, this operation corresponds to a switching from "0" to "1" in charge-based logic. All the other logic operations can be performed by using one or a combination of several logic circuits discussed below. A. Charge island The charge-island is comprised of two QPSJs and a capaci- tor. The two junctions can be identical or different depending on the application in the logic circuit. A circuit schematic of the island is shown in Fig. 1. When phase-slip occurs in both the junctions, the node 1 between both the QPSJs is isolated from the rest of the circuit acting as an island that can hold a charge of C.VC, where C is the capacitance of the capacitor. This circuit is a superconductor analog to a single- electron transistor [17]. In this logic operation, the charge on the island will be restricted to a single Cooper pair, i.e. 2e. 2 Fig. 1. Charge island circuit schematic to generate and/or latch charge on node 1. Note that the capacitance C can be a parasitic capacitance associated with the particular circuit design and layout. Fig. 3. Two input control/buffer circuit with input Vin2 acting as en- able/control signal. This circuit can be used as a direction control buffer circuit when Vin2 is DC bias. VC(Q2) > VC(Q3) > VC(Q1). Fig. 2. Simulation result of an island circuit shown in Fig. 1, illustrating constant-area current pulse of area = 2e. The critical voltage of both junctions given by VC = 0.7 V. Capacitance C = 1 2 2e/VC, voltage bias Vb = 1 mV, and magnitude of the pulse input voltage Vin = 2 mV. Fig. 4. Simulation result of a control circuit shown in Fig. 3, illustrating current pulse at the output only when the control signal is low. The critical voltage of junction Q1 is 0.7 mV, Q2 is 1 mV and Q3 is 1.5 mV. Capacitance C = 0.23 fF, Voltage bias Vb = 1.1 mV, magnitude of the pulse input voltage Vin1 = 1.5 mV and magnitude of the control input voltage is Vin2 = 1 mV. (a) Input current pulses. (b) Control voltage signal. (c) Output current pulses. Both the junctions Q1 and Q2 are biased by DC voltage Vb such that the voltage across each junction does not exceed the critical voltage VC of either junction. The input voltage Vin is a pulse signal that can drive the junction Q1 above its critical voltage VC and generate a current pulse. The circuit shown in Fig. 1 can be designed to accommodate either no charge on the island at an instant, or one Cooper pair depending on the application by appropriately designing the capacitor. If the capacitance C < 2e/VC, the capacitor cannot hold the charge generated by exciting Q1 above its critical voltage, and therefore immediately switches the junction Q2. But if the capacitance C > 2e/VC, then the island traps the charge until another pulse signal drives it to the output. Note that this circuit can be connected to another circuit instead of Vin to use the incoming current pulse to Q1 to drive the connected circuit. The circuit operation is illustrated using WRSPICE simula- tion, through demonstration of a constant-area current pulse as shown in Fig. 2. Different configurations of this circuit can be used in conjunction with other circuits to design several logic gates, some of which are shown in the following sections. B. Control/Buffer circuit The control/buffer circuit configuration is unique to charge- based logic, while the charge island is analogous to a flux loop in SFQ circuits [9]. In the simplest version of this circuit, three QPSJs of different device parameters are used along with two capacitors. It has two input terminals for DC/pulse voltage sources and a DC voltage source for biasing the junctions. This circuit is shown in Fig. 3. The junctions are designed such that the critical voltage of Q2 is higher than the critical voltage of Q3. The input voltage Vin2 has magnitude of 0.7VC where critical voltage of Q3 is VC. The input voltage Vin1 is significantly higher than the critical voltage of Q1 to be able to generate the current pulse. Therefore, when the current pulse is generated at Q1, it switches Q3 before Q2 when the input Vin2 is high and produces the output "0" at node 4. But when the input Vin2 is low, the output is the same as the input Vin1, as the junction Q2 is biased by Vb. Hence, the input Vin2 acts as the enable/control input. Furthermore, if the critical voltage of Q1 is lower than critical voltages of Q2 and Q3, then the circuit becomes unidirectional, only allowing the current from node 1 to node 4. The input Vin2 can be a DC bias to use this circuit as a buffer. The simulation result of an example operation of this circuit is illustrated in Fig. 4, with circuit parameters chosen to satisfy the conditions mentioned above. III. LOGIC GATES The charge island and the control/buffer circuit, in their different configurations, can be used in various possible con- figurations to design several logic gates or memory circuits. In some cases, it is possible to realize the same logic operations in different circuits. Some examples of logic gates designed using combinations of logic elements discussed in the previous section are presented below. A. OR gate The OR gate design discussed here predominantly uses charge islands with different parameters in its operation. However, the buffer circuit is added in the circuit to prevent data flow in directions other than that which is intended. Therefore, this circuit is a good example to illustrate different combinations of logic elements to achieve desired operation. The circuit schematic for a two-input OR gate is shown in Fig. 5. The two inputs terminals are connected to pulse voltage sources Vin1 and Vin2, but they can also be incoming current pulses from another circuit. The input branches have QPSJs that generate or simply transmit the current pulses with the capacitors at nodes 3 and 6 acting as the islands. The capacitance of capacitors at these nodes are designed to have values C < 2e/VC. The current from either of the inputs immediately switch Q4 and transmit the data further. Junction Q3 acts as the buffer circuit preventing the current pulse from one input in to the other. This is possible by designing Q3 to have lower critical voltage than Q1 and Q2, but higher than Q4. The island at node 8 functions similarly as islands at nodes 3 and 6. The charge island formed by devices Q5, Q6 and C(cid:48) are designed such that the charge 2e can be trapped at node 9, and an external force from clock Vclk is necessary to drive the trapped charge to output terminal. Therefore, with either input high, the charge 2e appears at node 9, with high output synchronized to the clock signal. When both the inputs are high, the result is the same, with the additional charge 2e following the path through Q3 to the ground. The output is low, only when both the inputs are low, since the clock signal alone will not be able to switch any of the junctions. This design is similar to an OR gate in SFQ circuits [9], with island formed at Q5, Q6 and C(cid:48) analogous to a two junction JJ interferometer and both the individual branches up to this island forming a circuit analogous to Josephson transmission line, with some differences in the operation of buffer circuit. An example simulation result of this circuit with selected parameters is shown in Fig. 6. AND and XOR logic operations can be achieved using similar circuits. In an AND gate, the charge trapping island is replaced by additional buffer circuit. While, in an XOR gate, the charge trapping island is completely removed. 3 Fig. 5. Two-input OR gate design with multiple charge islands in series. Critical voltages of junctions satisfy the conditions VC (Q4, Q5, Q6) < VC (Q3) < VC (Q1, Q2), and 4e/VC (Q5, Q6) > C(cid:48) > 2e/VC (Q5, Q6). Magnitudes of inputs Vin1 and Vin2 are 1.5VC (Q1, Q2), and that of clock Vclk is 1.5VC (Q4, Q5, Q6). DC voltage biases have values of 0.7VC (Q1, Q2). capacitance C < 2e/VC (Q1) Fig. 6. Simulation result of a two-input OR gate shown in Fig. 5. The critical voltages of junctions Q1, Q2 is 1.5 mV, Q3 is 0.7 mV and Q4, Q5, Q6 is 1 mV. Capacitance C = 0.23 fF and C(cid:48) = 0.6 fF, Voltage bias Vb = 0.7 mV, magnitude of the pulse input voltages Vin1, Vin2 = 1.5 mV and magnitude of the clock is Vclk = 0.7 mV. (a) Input current pulses from Q1. (b) Input current pulses from Q2. (c) Output current pulses. Fig. 7. Two input XOR gate with both inputs Vin1 and Vin2 connected to two different terminals of the circuit each. VC(Q2, Q5) > VC(Q3, Q6) > VC(Q1, Q4). Vin1, Vin2 have magnitudes of 1.5VC(Q1, Q4). C < 2e/VC 4 logic circuits have been demonstrated in simulations, along with examples of the developed logic gates using previously developed models to support these conclusions. However, there are several challenges to overcome, particularly in building and testing these junctions. These include understanding the details of required materials and design principles required to control junction parameters to suit charge-based logic operation. REFERENCES [1] R. Service, "What itll take to go to exascale," Science, vol. 335, no. 6067, pp. 394–396, 2012. [2] D. S. Holmes, A. L. Ripple, and M. A. Manheimer, "Energy-efficient su- perconducting computingpower budgets and requirements," IEEE Trans- actions on Applied Superconductivity, vol. 23, no. 3, pp. 1 701 610– 1 701 610, 2013. [3] S. K. Tolpygo, "Superconductor digital electronics: Scalability and energy efficiency issues," Low Temperature Physics, vol. 42, no. 5, pp. 361–379, 2016. [4] N. Giordano, "Evidence for macroscopic quantum tunneling in one- dimensional superconductors," Physical review letters, vol. 61, no. 18, p. 2137, 1988. [5] A. Bezryadin, C. Lau, and M. Tinkham, "Quantum suppression of superconductivity in ultrathin nanowires," Nature, vol. 404, no. 6781, pp. 971–974, 2000. [6] K. Y. Arutyunov, T. T. Hongisto, J. S. Lehtinen, L. I. Leino, and A. L. Vasiliev, "Quantum phase slip phenomenon in ultra-narrow superconduct- ing nanorings," Scientific reports, vol. 2, 2012. [7] J. Mooij and Y. V. Nazarov, "Superconducting nanowires as quantum phase-slip junctions," Nature Physics, vol. 2, no. 3, pp. 169–172, 2006. [8] A. J. Kerman, "Flux–charge duality and topological quantum phase fluctuations in quasi-one-dimensional superconductors," New Journal of Physics, vol. 15, no. 10, p. 105017, 2013. [9] K. K. Likharev and V. K. Semenov, "Rsfq logic/memory family: A new josephson-junction technology for sub-terahertz-clock-frequency digital systems," Applied Superconductivity, IEEE Transactions on, vol. 1, no. 1, pp. 3–28, 1991. [10] U. S. Goteti and M. C. Hamilton, "Spice model implementation of quantum phase-slip junctions," Electronics Letters, vol. 51, no. 13, pp. 979–981, 2015. [11] K. Likharev, O. Mukhanov, and V. Semenov, "Resistive single flux quantum logic for the josephson-junction digital technology," SQUID'85, pp. 1103–1108, 1985. [12] V. Koshelets, K. Likharev, V. Migulin, O. Mukhanov, G. Ovsyannikov, V. Semenov, I. Serpuchenko, and A. Vystavkin, "Experimental realization of a resistive single flux quantum logic circuit," IEEE Transactions on Magnetics, vol. 23, no. 2, pp. 755–758, 1987. [13] O. Mukhanov, V. Semenov, and K. Likharev, "Ultimate performance of the rsfq logic circuits," IEEE Transactions on Magnetics, vol. 23, no. 2, pp. 759–762, 1987. [14] V. Kaplunenko, M. Khabipov, V. Koshelets, K. Likharev, O. Mukhanov, V. Semenov, I. Serpuchenko, and A. Vystavkin, "Experimental study of the rsfq logic elements," IEEE Transactions on Magnetics, vol. 25, no. 2, pp. 861–864, 1989. [15] A. Hriscu and Y. V. Nazarov, "Coulomb blockade due to quantum phase slips illustrated with devices," Physical Review B, vol. 83, no. 17, p. 174511, 2011. [16] T. Hongisto and A. Zorin, "Single-charge transistor based on the charge- phase duality of a superconducting nanowire circuit," Physical review letters, vol. 108, no. 9, p. 097001, 2012. [17] K. K. Likharev, "Single-electron devices and their applications," Pro- ceedings of the IEEE, vol. 87, no. 4, pp. 606–632, 1999. Fig. 8. Simulation result of a two-input XOR gate shown in Fig. 7. The critical voltages of junctions Q1, Q4 is 0.7 mV, Q3, Q6 is 1 mV and Q2, Q5 is 1.5 mV. Capacitance C = 0.23 fF, Voltage bias Vb = 0.7 mV and magnitude of the pulse input voltages Vin1, Vin2 = 1.5 mV. (a) Input current pulses from Q1. (b) Input current pulses from Q4. (c) Output current pulses at node 4. B. XOR gate The XOR operation can be achieved by using the control gate circuit discussed in section IIB. Two identical control gates are used in parallel, with both having the data inputs at both input terminals but their posi- tions swapped from one circuit to another. A simple version of the circuit schematic is shown in Fig. 7, though additional buffer circuits may be added at the input or output terminals depending on the application of this circuit. As shown in Fig. 7, the circuit has two nominally identical control circuits with Q1 and Q4 identical, Q2 and Q5 identical and Q3 and Q6 identical, along with all identical capacitors. The input voltage signal Vin1is connected to the junctions Q1 and Q6, and Vin2 is connected to Q2 and Q4. When both the inputs are low, no charge transport occurs through the junctions generating output "0". When both the inputs are high, the charge 2e is generated at Q1 and Q4, but the corresponding current pulse signals take the paths through Q3 and Q6, respectively, enabled by the input signals at these junctions, thereby generating output "0". When one of the inputs is high, the current pulse travels to the output node 4 corresponding to output "1". The simulation results of this circuit with parameters chosen to satisfy the conditions stated is shown in Fig. 8. Note that this circuit can also be used as an inverter with one of the inputs set as clock, or a DC voltage bias. Furthermore, the input signals can be tied together in different configurations to achieve NAND and NOR gates with more than two inputs. IV. CONCLUSION Quantum phase-slip junctions provide an alternative way to implement logic circuits using superconductors that may have some advantages such as significant reduction in circuit complexity, supported by multiple ways to design logic cir- cuits, and implementing voltage bias as opposed to current bias in JJ-based circuits. The building blocks of charge-based
1911.09184	1	1911	2019-11-20T21:39:33	Mid-infrared polarized emission from black phosphorus light-emitting diodes	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	The mid-infrared (MIR) spectral range is of immense use for civilian and military applications. The large number of vibrational absorption bands in this range can be used for gas sensing, process control and spectroscopy. In addition, there exists transparency windows in the atmosphere such as that between 3.6-3.8 $\mu$m, which are ideal for free-space optical communication, range finding and thermal imaging. A number of different semiconductor platforms have been used for MIR light-emission. This includes InAsSb/InAs quantum wells, InSb/AlInSb, GaInAsSbP pentanary alloys, and intersubband transitions in group III-V compounds. These approaches, however, are costly and lack the potential for integration on silicon and silicon-on-insulator platforms. In this respect, two-dimensional (2D) materials are particularly attractive due to the ease with which they can be heterointegrated. Weak interactions between neighbouring atomic layers in these materials allows for deposition on arbitrary substrates and van der Waals heterostructures enable the design of devices with targeted optoelectronic properties. In this Letter, we demonstrate a light-emitting diode (LED) based on the 2D semiconductor black phosphorus (BP). The device, which is composed of a BP/molybdenum disulfide (MoS$_2$) heterojunction emits polarized light at $\lambda$ = 3.68 $\mu$m with room-temperature internal and external quantum efficiencies (IQE and EQE) of ~1$\%$ and $\sim3\times10^{-2}\%$, respectively. The ability to tune the bandgap, and consequently emission wavelength of BP, with layer number, strain and electric field make it a particularly attractive platform for MIR emission.	physics.app-ph	physics	Mid-infrared polarized emission from black phosphorus light-emitting diodes Junjia Wang1, Adrien Rousseau1, Mei Yang1, Tony Low2, Sébastien Francoeur1, and Stéphane Kéna-Cohen1 1Department of Engineering Physics, Polytechnique Montréal, Montréal, Québec, H3C 3A7, Canada 2Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA KEYWORDS: Black phosphorus, light-emitting diodes, mid-infrared emitters, 2D materials, heterostructures 1 The mid-infrared (MIR) spectral range is of immense use for civilian and military applications. The large number of vibrational absorption bands in this range can be used for gas sensing, process control and spectroscopy. In addition, there exists transparency windows in the atmosphere such as that between 3.6 -- 3.8 µm, which are ideal for free-space optical communication, range finding and thermal imaging. A number of different semiconductor platforms have been used for MIR light-emission. This includes InAsSb/InAs quantum wells1, InSb/AlInSb2, GaInAsSbP pentanary alloys3, and intersubband transitions in group III-V compounds4. These approaches, however, are costly and lack the potential for integration on silicon and silicon-on-insulator platforms. In this respect, two-dimensional (2D) materials are particularly attractive due to the ease with which they can be heterointegrated. Weak interactions between neighbouring atomic layers in these materials allows for deposition on arbitrary substrates and van der Waals heterostructures enable the design of devices with targeted optoelectronic properties. In this Letter, we demonstrate a light-emitting diode (LED) based on the 2D semiconductor black phosphorus (BP). The device, which is composed of a BP/molybdenum disulfide (MoS2) heterojunction emits polarized light at l = 3.68 μm with room-temperature internal and external quantum efficiencies (IQE and EQE) of ~1% and ~3×10-2 %, respectively. The ability to tune the bandgap, and consequently emission wavelength of BP, with layer number, strain and electric field make it a particularly attractive platform for MIR emission. Electroluminescence (EL) from 2D transition metal dichalcogenides (TMDs) was observed shortly after monolayers from this class of materials were first isolated5, 6, 7, 8, 9. In monolayer TMD crystals, the formation of a direct bandgap allows for reasonable light-emission efficiencies to be achieved. The high degree of confinement in monolayers also ensures a large exciton binding 2 energy and consequently efficient excitonic emission from the fabricated devices. Monolayer LEDs have been fabricated using a broad range of geometries: Schottky junctions,5 p-n junctions defined using local gates7, 8, 10 and ionic-liquid gating11. However, electroluminescence from planar devices typically leads to low EQEs of <0.1%. Vertical p-n junctions based on atomically flat heterojunctions can be fabricated using van der Waals stacking techniques.6 This leads to simpler device geometries and higher efficiencies. It also allows for unique architectures to be fabricated such as those based on hBN tunnel barriers12. In the latter, single monolayer devices have led to EQEs of ~1%, where as multiple quantum well geometries can achieve EQEs of up to ~8.4%.12 Black phosphorus has recently attracted significant attention as an anisotropic material for optoelectronic and electronic applications13. This semiconducting material shows relatively high carrier mobilities and a direct bandgap regardless of film thickness13, 14, 15, 16, 17. The atomic crystal structure of BP consists of layered sp3-hybridized phosphorus atoms with distinct configurations along two orientations termed the armchair (AC) and zigzag (ZZ) directions. This gives rise to strong in-plane anisotropy for thermal conduction18, 19, carrier transport and optical absorption20, 21, 22, 23, 24. In the context of optoelectronics, one of the most interesting properties of BP is its widely tunable bandgap and the fact that it is a direct bandgap material from the bulk down to bilayers. Thick multilayer BP flakes have a direct band gap ~0.3 eV15, 25 and when reducing the number of layers, this gap increases to nearly ~2 eV.26 In addition, electrostatic doping or electric fields can be used to further reduce the bandgap from its bulk value.27, 28, 29 Until now, much of the focus on BP optoelectronics has focused on its use as a material for MIR photodetection. In this work, we demonstrate that BP also holds great promise for electrically-driven MIR light emission. 3 Our device architecture is shown schematically in Figure 1a and b. It consists of 70 nm-thick p- type BP layer on a 10 nm-thick n-type MoS2 layer fabricated using the hot pick-up and stamping technique30 (see Methods). Both layers are contacted with Cr/Au electrodes. The device was fabricated on a highly p-doped Si substrate with 90 nm SiO2 oxide layer, which can be used as a back gate. An optical micrograph of the fabricated LED is shown in Fig. 1c with both layer outlined. Fig. 2a shows the equilibrium band diagram of the BP/MoS2 heterostructure assuming Anderson's rule for band alignment and an electron affinity for BP of c~3.6 eV.31 The p and n- doping of BP and MoS2, respectively, leads to a band alignment favoring the interface accumulation of holes in BP and electrons in MoS2. As previously observed for thick BP flakes, two distinct regimes of operation are possible.32 For negative VDS, band-to-band tunneling can occur, as shown in Fig. 2b. When VDS is made more negative, the BP valence band minimum shifts above the MoS2 conduction band minimum. An energy window emerges where electrons from the BP valence band can transit directly to the MoS2 conduction band. As shown in Fig. 2c, for positive VDS, the current is mostly due to thermionic crossing of the barrier by electrons from MoS2 to BP. Figures 2d and 2e show the resulting I-V characteristic of the device measured under ambient conditions. Note that the forward bias behavior can be strongly modulated by applying a back gate voltage, which varies the doping density. Figure 2d highlights that the on-off ratio can be as high as 105. The photoluminescence spectrum of BP, shown in Fig. 3a (top), was measured using above gap excitation at l = 808 nm with an irradiance 100 μW/μm2. The emission intensity maximum is at 3.68 µm, which agrees well with reported measurements on thick BP flakes33. To measure EL against the thermal background, a VGS = 10 Vpk-pk sinusoidal signal is applied to modulate IDS and consequently the EL intensity. The EL is measured using FTIR with a HgCdTe detector and 4 standard lock-in techniques. Figure 3a (bottom) shows the EL spectrum measured at a forward bias VDS = 7V. The EL spectrum is centered at the same wavelength as the PL. The spectral linewidth appears narrower that that in PL, but this is most-likely related to the periodic noise minima at the EL spectrum edges, which are due to the interferometer scan length. Figure 3b (top) shows the IV characteristic of the device measured when the gate is modulated. As in Fig. 2d, the forward bias current saturates at large VDS. Figure 3b (bottom) shows the LED radiance, which increases concomitantly with the increasing current for positive VDS. By measuring the absolute emitted power and correcting for losses through the reflective measurement objective, we find an external quantum efficiency (EQE) of 0.03% at VDS = 7 V (see Supplementary for details). Figure S7 shows the EQE as a function of the forward bias current. A small increase in EQE is observed when the carrier density is increased, which is consistent with competition between monomolecular and bimolecular recombination. In addition, selection rules near the bandgap of BP lead to a much larger oscillator strength for polarization along the AC direction. In EL, we similarly find that the luminescence is indeed polarized mostly along the AC direction. Figure 3d shows the measured intensity as a function of polarization. We find a polarization ratio of ~3 for the AC to ZZ intensity. A large fraction of the photon loss can be ascribed to the optical environment of the LED. When materials with different dielectric constants are in the near field of an emitting dipole, emission will be directed into each material in proportion to its optical density of states, which scales as n3. For our structure, emission will preferentially be radiated in the bottom direction, due to the higher refractive index of silicon compared to air. Figure 3c shows the calculated radiation pattern for a horizontal BP dipole in our structure (along the AC direction).34 We calculate an outcoupling efficiency of only 3.6%, which corresponds to an IQE of ~1%. 5 In summary, we have demonstrated a room-temperature BP/MoS2 LED emitting at 3.68 μm, which corresponds to a strategically important MIR spectral region. The device shows strongly polarized emission along the AC crystal direction. Several strategies can be used to increase the efficiency of this structure. Notably, the outcoupling efficiency would be significant improved via the use of a low-index (e.g. glass) or metallic substrate and the IQE could be further improved via the use of a double heterostructure or carrier-selective contacts. The ability to heterointegrate BP on various platforms, and to tune the bandgap of BP, e.g. via the BP thickness, a vertical electrical bias or chemical doping, make it an extremely attractive option for use as a versatile MIR light source. 6 METHODS Device fabrication BP (Black Phosphorus, Smart Element) was mechanically exfoliated onto a substrate using a PVC tape (SPV 224PR-M, Nitto Denko) inside a glovebox, and the flake is picked up by a stamp consisting of a layer of polycarbonate (PC) mounted on a block of polydimethylsiloxane (PDMS) at a temperature of 60 degrees. The MoS2 was then picked up using the BP flake at a temperature of 80 degerees. The heterostructure is released onto a commercial p-type silicon substrate (Silicon/Silicon dioxide (90 nm) wafers from Graphene Supermarket) at a temperature of 180 degrees followed by removal of the PC using cholorform. Then the electrodes patterns are defined by electron beam lithography (EBL, Raith eLine) using PMMA A4 495 resist. 10 nm of chromium and 60 nm of gold were thermally evaporated to form the contacts (EvoVac, Angstrom Engineering). Following lift-off, 1 nm of aluminium was deposited on top of the structure to form a Al2O3 oxide oxidation barrier. The thickness of the flakes were measured by atomic force microscopy (AFM, Bruker Dimension FastScan). An optical microscope image of the completed device is shown in Fig. 1c. The BP is on top of MoS2 and the thickness are 70 nm and 10 nm, respectively. The active area is ~285.2 um2. Raman spectroscopy was used to determine the axis of the flake (see Supplementary for details). 7 Device characterization A schematic of the experimental setup is shown in Fig. S1. Completed devices were mounted onto a translation stage and contacted by electrical probes. Current -- voltage measurements were taken in a two-probe configuration using a source meter (2614B, Keithley). For the PL measurements, the sample was excited by focusing light beam from a 808 nm semiconductor laser. A microscope objective lens was used to focus the beam and a chopper is placed before to modulate the light at a frequency of 500 Hz. The PL was then reflected by a CaF2 beam splitter and collected by the MCT detector. The AC output signal from the MCT detector was connected to a lock-in amplifier (MFLI, Zurich Instruments) and the DC output form the lock-in amplifier was connected back to the MCT detector and the FTIR. The lock-in amplifier used a time constant of 3 seconds with an amplification factor of 1000 and the FTIR step-scan used a delay of 24 seconds and averaged 20 times. For the EL measurements, the two electrodes were contacted by the two probes and the back of the chip was connected by a sinusoidal AC signal (10 Vpk-pk) sychronised to the lock-in amplifer with a frequency of 500 Hz. The EL is collected by the microscope objective lens and reflected by the CaF2 beam splitter to the MCT detector. The lock-in amplifier and FTIR step-scan used same settings as the PL measurements except the amplification factor was 2000. AUTHOR INFORMATION Corresponding Author *[email protected] 8 Notes The authors declare no competing financial interest. ACKNOWLEDGMENT The authors would like to acknowledge M.Z.U Khan for providing the marked substrates. S.K.C. acknowledges support from the Canada Research Chairs program. 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Adv Chem Phys 1978: 1-65. 12 FIGURES a Au Au BP MoS2 Vds Al2O3 BP D S MoS2 SiO2 p-Si b Vgs c diode. (b) A schematic illustration the cross-sectional view of the BP/MoS2 heterojunction Figure 1. BP/MoS2 p-n junctions. (a) Aschematic illustration of BP/MoS2 heterojunction p-n device. (c) Optical image of the BP/MoS2 heterojunction. BP: flake with blue outline. MoS2 flake with orange outline. Scale bar: 10 μm. 13 Figure 2. Electrical characterization. (a) Equilibrium band diagram of the BP/MoS2 heterojunction assuming the electron affinity rule. (b) Band diagram under negative VDS showing the possibility of band-to-band tunneling. (c) Band diagram at positive VDS showing the light-emission process. (d) Transistor transfer characteristic for positive and negative drain- source voltage. (e) Transistor output characteristic for varying gate voltage. 14 a ) . u . a ( y t i s n e t n I 8 6 4 2 0 3 2 1 0 2.0 2.5 b PL ) A μ ( s d I EL ) 2 - m c 1 - r s W m ( e c n a i d a R 5.0 5.5 3.5 3.0 4.5 Wavelength (μm) 4.0 9 8 7 6 5 4 3 2 1 0 0.12 0.10 0.08 0.06 0.04 0.02 c ) . u . a ( y t i s n e t n I 2E-03 1E-03 150° 0 180° 0.02 0.04 210° 0.06 90° 120° 60° 30° Air Silicon 0° 330° d ) . u . a ( y t i s n e t n I Current Radiance 0 1 2 4 3 5 VDS (V) 90 6 7 8 500 400 300 200 100 100 200 300 400 500 150 180 210 120 60 30 0 330 240 300 240° 300° 270° Figure 3. (a) Photoluminiscience (red) and electroluminiscience (blue) of the BP/MoS2 diode. (b) Upper: forward bias current Lower: current under different forward bias voltages measured with lock-in detection at the gate modulation frequency. (c) Simulated outcoupling efficiency for a horizontal dipole emitting in the top (air) and bottom (silicon) directions. (d) Polarization- resolved measurements of the EL intensity. 270 15
1801.02195	1	1801	2018-01-07T14:43:27	X-ray studies: Phase transformations and microstructure changes	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	The goal of this chapter is to illustrate the potential of high energy synchrotron radiation experiments for in situ studies of the processing of superconductors. We present case studies describing the Nb3Sn wire diffusion HT, the transformation HT of Nb3Al precursor wires, and the melt processing HT of Bi 2212 wires.	physics.app-ph	physics	1 X-ray studies: Phase transformations and microstructure changes C. Scheuerlein, M. Di Michiel G1.1.2.1 Introduction Conventional materials characterisation of superconducting wires or tapes implies the destructive preparation of the samples by cutting, grinding and polishing, for instance for microscopic studies. A destructive sample preparation is also required for X-ray diffraction (XRD) experiments with laboratory diffractometers, which commonly use Cu Kα radiation (ECu-Kα~8.03 keV) with a penetration depth of some tens of µm in metallic samples. In contrast, both neutrons and high energy photons can penetrate mm-thick strongly absorbing superconductors, which enables non-destructive diffraction experiments, for instance with Bi-2223 tapes [i,ii]. The X-ray transmission through typical Ta alloyed Nb3Sn wires as a function of the X-ray energy is presented in Figure G1.1.2.1. X-ray energies above 50 keV enable non-destructive experiments in transmission geometry with Nb3Sn wires [iii]. Figure G1.1.2.1. X-ray transmission through Ta alloyed Nb3Sn wires of equal composition with different diameters. Typical acquisition times of neutron diffraction pattern of individual superconducting wires are in the order of hours [iv]. State-of-the-art high energy synchrotron sources can provide very high monochromatic photon flux densities, and diffraction measurements can be performed within seconds when using fast read-out area detectors in Debye-Scherrer transmission geometry. This chapter focuses on high energy synchrotron radiation in situ studies of entire processes, which can be much faster than conventional materials studies that require a series of samples to be prepared after different processing steps. The non-destructive in situ studies 2 also avoid experimental uncertainties caused by sample quenching, sample inhomogeneities and preparation artefacts. The relatively small scattering angles of high energy X-rays, facilitate to add auxiliary equipment, for instance a furnace for heat treatment (HT) studies. For the experiments presented here two furnaces of the ESRF ID15 beamline have been used. For in situ studies in inert gas or air at ambient pressure the ID15 diffraction and tomography furnace was used (Figure G1.1.2.2.a). After alignment with respect to the X-ray beam, the position of this furnace remains fixed during the experiment. The sample is mounted onto a ceramic stick that enters the furnace from a bottom hole. For sample alignment and rotation the ceramic stick is mounted onto a goniometer and the rotation and translation stages. The thin Al foil windows at both sides of the furnace are nearly transparent for high energy photons. The furnace temperature can be regulated using the temperature reading of a thermocouple that can be inserted into the furnace through the bottom hole. Large sample temperature uncertainties can be avoided when the thermocouple is spot welded onto the sample. For overpressure in situ studies a set-up consisting of a capillary furnace around a high pressure cell made of a single crystal sapphire tube has been used (Figure G1.1.2.2.b). This furnace was developed for combined in situ high energy X-ray diffraction and mass spectrometry investigations during catalysed gas/solid or liquid/solid reactions [v]. The connection of the high pressure cell to the pressure controller is done with a flexible stainless steel line that allows rotating the high pressure cell up to 360° during the acquisition of diffraction patterns. For the study of superconducting wires the high pressure cell was modified such that a thermocouple can be spot welded onto the superconductor sample [vi]. Figure G1.1.2.2. (a) ID15 furnace for in situ XRD and tomography at ambient pressure. (b) Furnace for in situ XRD at pressures up to 200 bar in measurement position and (c) capillary furnace withdrawn from the high pressure cell. Other sample environments are possible too, for instance a cryostat and a tensile rig can be added. This makes it possible to study the superconductor electromechanical behaviour and the damage development by XRD measurements at well-defined uniaxial tensile stress or strain at cryogenic temperatures, for instance in liquid Helium [iii,vii,viii] or in liquid Nitrogen [ix]. Lattice distortions, superconducting properties and mechanical properties of high temperature superconductors can be measured simultaneously [ix]. 3 X-ray absorption micro-tomography (µ-CT) can provide three dimensional images of the superconductor bulk. A spatial resolution of µ-CT in the order of 1 µm is today routinely obtainable with both laboratory and synchrotron sources. Fast µ-CT [x,xi], where the acquisition of the about 1000 radiographs needed for the reconstruction of one tomogram lasts not more than 1 minute, is required for in situ studies of microstructural changes and porosity formation during the processing of superconductors with temperature ramp rates in the order of 100 °C/h. Different synchrotron techniques, for instance high energy XRD and µ-CT, can be combined in one experiment. This combination has been pioneered at the ESRF ID15A beamline for an in situ study of the void growth mechanisms in Nb3Sn wires [xii]. This was achieved using two X-ray beams, a high intensity filtered white X-ray beam for µ-CT and a monochromatic X-ray beam (energy 88 keV, energy bandwidth 0.1 keV) for the XRD measurements [xiii]. The sample and the furnace needed to be aligned in both X-ray beams, and during the entire HT cycle, they were continuously moved from the white beam to the monochromatic beam for the alternating XRD and µ-CT measurements. After the installation of the new ID15 insertion device in 2008 the flux density of high energy monochromatic photons has been further increased such that XRD and fast µ-CT can now be performed both with the same monochromatic photon beam. The goal of this chapter is to illustrate the potential of high energy synchrotron radiation experiments for in situ studies of the processing of superconductors. We present case studies describing the Nb3Sn wire diffusion HT, the transformation HT of Nb3Al precursor wires, and the melt processing HT of Bi-2212 wires. G1.1.2.2 Nb3Sn diffusion HT G1.1.2.2.1 Phase transformations during the diffusion HT of Nb3Sn superconductors The Nb3Sn phase in multifilament wires is produced during a diffusion HT where the precursor elements Nb and Sn interdiffuse with the Cu matrix, forming various intermetallic phases and finally the superconducting Nb3Sn [xiv]. The intermediate phase transformations can degrade the microstructural and microchemical homogeneity of the fully reacted superconductor. This is most easily observed in the tubular strand types (Powder-in-Tube (PIT) [xv] and Tube Type [xvi]), where typically 25% of the Nb3Sn volume consists of coarse grains that are not well connected and cannot conduct significant supercurrents. High energy synchrotron X-ray diffraction is an excellent tool to monitor the phase changes in superconducting wires in situ during the processing HT [xvii,xviii]. As an example, Sn, Cu6Sn5, NbSn2, Nb6Sn5, Nb3Sn, and a CuNbSn ternary phase can be identified in the diffraction pattern that have been acquired during Nb3Sn PIT wire HT (Figure G1.1.2.3). The respective temperature intervals where these phases are present are easily revealed in the sequence of diffractograms. 4 Figure G1.1.2.3. Summary of the diffraction patterns acquired in situ during the Nb3Sn PIT wire reaction HT. © IOP Publishing. Reproduced with permission. All rights reserved. In situ XRD measurements during the reaction HT of Restacked Rod Process (RRP) type [xix] and Tube Type [xx] Nb3Sn wires revealed a similar phase sequence. In particular CuNbSn, NbSn2 and Nb6Sn5 are detected in the high Jc strands. In the RRP type wire the amount of these phases is comparatively small, which presumably explains the relatively small volume fraction of Nb3Sn coarse grains in the fully processed RRP wire. During the processing HT of a low Sn content Internal Tin wire [xxi] a markedly different phase sequence is observed, and in particular the phases CuNbSn, NbSn2 and Nb6Sn5 are not formed [xii] (see G1.1.2.5). G1.1.2.2.2 Nb3Sn nucleation and growth Nb3Sn nucleation and growth in multifilament wires is accompanied by changes of the Sn content distribution, and the Nb3Sn grain size distribution. These microstructure and composition changes, which have a strong influence on Jc [xxii,xxiii], can be followed in situ by high energy synchrotron XRD measurements. By monitoring the Nb3Sn diffraction peak area evolution the Nb3Sn formation kinetics in different wires can be compared. In an Internal Tin wire with low Sn content the Nb3Sn phase growth follows a parabolic law [xvii], indicating that in this wire Nb3Sn growth is diffusion controlled. This is in contrast to the Nb3Sn phase growth in state-of-the-art high Sn content RRP and PIT type wires, where Nb3Sn growth is not purely diffusion controlled [xvii,xix]. Figure G1.1.2.4 compares the Nb3Sn growth in a RRP wire with 80 µm subelement size with that in PIT wires with 30 µm and 50 µm subelement size. All wires followed the same HT cycle with 100 °C/h heating rate and three isothermal steps (4 h-700 °C, 1 h-800 °C and 1 h-900 °C). Usually the processing peak temperature of Nb3Sn superconductors does not exceed 700 °C. Here the 800 °C and 900 °C plateaus were added to explore the full reaction within a duration that allows to perform in situ synchrotron experiments. It is assumed that in 5 the three wires the maximum possible amount of Nb3Sn was formed during the HT. Therefore, the maximum Nb3Sn peak areas measured during the HT cycles can be normalised, and the Nb3Sn growth kinetics in the wires with different elemental composition and architecture can be compared. In the RRP wire with 80 µm subelement size Nb3Sn is already detected at about 540 °C and about 80% of the maximum possible Nb3Sn volume is formed after the 4 h-700 °C plateau. In the PIT wires Nb3Sn is first detected during the 700 °C plateau, and the Nb3Sn formation kinetics and the duration needed to transform Nb6Sn5 entirely into Nb3Sn are significantly influenced by the subelement size. Figure G1.1.2.4. Evolution of the integrated intensity of prominent Nb3Sn peaks in the PIT Ø=0.8 mm, PIT Ø=1.25 mm and RRP Ø=0.8 mm wires during identical HT. Courtesy J. Kadar. Keeping a small grain size for flux pinning and at the same time have maximum Nb3Sn volume and Sn content are conflicting needs of the HT. In ideally homogeneous wires, the Nb3Sn grain size and Sn content evolution can be monitored simultaneously with the Nb3Sn volume by XRD measurements. The Sn content can be determined from Nb3Sn lattice parameter measurements [xxiv]. Assuming that the Nb3Sn grains nucleate and grow in a nearly stress- free state, the decrease of diffraction peak width after deconvolution of the instrument function is associated to the increase of grain size, and the use of the Scherrer formula allows for a rough calculation of the mean crystallite size [xxv]. In order to monitor crystallite sizes up to 200 nm the diffraction experiment needs to be optimised for minimising instrumental peak broadening. Since the RRP wire has a comparatively homogeneous Nb3Sn microstructure it has been selected for the Nb3Sn nucleation and growth in situ study [xxvi]. Figure G1.1.2.5 compares the changes of the Nb3Sn volume with the average crystallite size evolution (a) and the average Sn content (b) during 100 °C/h HT with the three isothermal steps at 700 °C, 800 °C and 900 °C. 5006007008009000%20%40%60%80%100%56789101112131415Temperature (°C)Integrated intensityHT duration (h)Nb3Sn(200) + (210) + (320)+ (321) 6 Figure G1.1.2.5. Average Nb3Sn crystallite size and volume from Nb3Sn (200) reflection and (b) Nb3Sn lattice parameter as a function of temperature. The relative lattice parameter variation induced solely by thermal expansion in the temperature interval 540-900 °C is shown for comparison. Reproduced with permission from Appl. Phys. Lett. 99, 122508. Copyright 2011, AIP Publishing LLC. At the onset of detectability (at 540 °C), the mean Nb3Sn crystallite size estimated from the Nb3Sn (200) peak width is about 60 nm. During the 700 °C plateau the average crystallite size increases from 110 nm to about 180 nm. At the same time the Nb3Sn volume increases by about 35% and the Nb3Sn lattice parameter increases from 5.3140 to 5.3156 A. This indicates that the average Sn content increases by more than 1%, which in turn corresponds to a strong critical field Bc20 increase of 5 T [xxii]. At high magnetic field such a strong Bc2 increase outweighs the reduction of flux pinning force due to the simultaneous Nb3Sn grains growth. Further increase in temperature and HT duration only slightly increases the Nb3Sn volume but has a detrimental influence on the Nb3Sn crystallite size, which results in limited Jc when flux pinning has a dominating influence. G1.1.2.2.3 Nb3Sn texture formation Static texture analysis of bulk materials can be performed best by neutron diffraction measurements because of the relatively low neutron absorption. Synchrotron XRD in transmission geometry using an area detector can be very fast and is therefore better suited for monitoring texture formation in situ during processing HT [xxvii]. Diffraction images of different Nb3Sn wires acquired with a Trixell Pixium 4700 twodimensional flatpanel digital detector are compared in Figure G1.1.2.6. Preferential crystallite orientation is revealed by intensity fluctuations along the Nb and Nb3Sn diffraction rings [viii]. 7 Figure G1.1.2.6. Diffraction pattern of a Bronze Route, PIT and RRP Nb3Sn wire. The dashed arrows indicate the positions of intensity maxima in the Nb3Sn (200) Debye rings. © IOP Publishing. Reproduced with permission. All rights reserved. The homogeneous intensity along the Nb3Sn rings of the BR wire shows that the BR process produces randomly oriented Nb3Sn crystallites. In contrast, intensity maxima are seen in the Nb3Sn (200) rings of the RRP and PIT type wires, but the intensity maxima are in different positions. Further texture analysis by Electron Backscatter Diffraction (EBSD) revealed a Nb3Sn <110> texture in the PIT type wire, while in the RRP type wire Nb3Sn grows with a <100> texture in the wire axis direction [xxviii]. EBSD also confirmed a strong <110> Nb texture parallel to the wire axis, as it is commonly observed in cold drawn body centered cubic (bcc) Nb. G1.1.2.2.4 Void growth mechanisms in Nb3Sn superconductors The presence of porosity in superconductors is often unavoidable, and the fabrication route can have a strong influence on the porosity volume and the distribution of voids that remains in the fully processed superconductor. Porosity generally reduces the useful superconductor volume in the composite, and in some cases it may degrade the irreversible strain limit of brittle superconductors. If the porosity is distributed inside the superconducting phase it can block the supercurrent. The visualisation and quantitative description of the distribution of voids in the superconductor can help to better understand the porosity formation and redistribution mechanisms, and how porosity influences the superconducting properties. When the void shape and distribution are irregular, two-dimensional metallographic observations of void formation can be erratic and misleading. In contrast, X-ray micro-tomography (µ-CT) can provide non-destructively three- dimensional (3D) quantitative information about the porosity and particle size distribution. At modern synchrotrons tomograms can be acquired in less than one minute, which enables time resolved in situ µ-CT studies of entire processes. Figure G1.1.2.7 shows a sequence of tomograms that were acquired in situ during the processing HT of a low Sn content Internal Tin Nb3Sn wire [xxi] with a ramp rate of 60 °C/h, using the tomography furnace shown in Figure G1.1.2.2.(a). In order to obtain a 3D view of the porosity inside the wire, the strand materials have been transparently depictured in the image reconstructions. 8 Figure G1.1.2.7. 3D view of the porosity inside an Internal Tin Nb3Sn wire acquired in situ by synchrotron µ-CT at different temperatures. Reproduced with permission from Appl. Phys. Lett. 90, 132510. Copyright 2007, AIP Publishing LLC. In Figure G1.1.2.8 the phase evolution during the HT, based on diffraction peak area measurements, is compared with the porosity volume evolution, which is determined from the simultaneously acquired tomograms (Figure G1.1.2.7). Figure G1.1.2.8. Evolution of prominent diffraction peak areas of all Sn containing phases, apart from α-bronze, that exist in the IT Nb3Sn strand during the reaction HT up to 540 °C. Diffraction peak areas have been scaled such that the values correspond with the relative phase volume in the wire. The liquid Sn evolution is estimated from the amount of the detected phases. The total void volume is shown for comparison. Reproduced with permission from Appl. Phys. Lett. 90, 132510. Copyright 2007, AIP Publishing LLC. 9 The phase evolution during the HT of the low Sn content Internal Tin wire differs strongly from that of high Sn content PIT and RRP type wires (Figure G1.1.2.3). In particular the Nb containing phases NbSn2, CuNbSn and Nb6Sn5 are not formed in the low Sn content wire. The analysis of the simultaneously acquired µ-CT and XRD results allows to distinguish between different void formation mechanisms. The growth of the globular voids up to a temperature of about 200 °C is driven by a gain in free energy through a reduction of the total void surface area when smaller voids present in the as-drawn wire agglomerate to larger globular voids. At 200 °C the maximum ratio of void volume to void surface area is obtained. At this temperature the total void volume corresponds to 2.5% of the pure Sn volume in the as-drawn wire. The correlation between void volume and Cu3Sn content, which is obvious in Figure G1.1.2.8, is due to the 4% higher density of Cu3Sn with respect to the Cu and Sn in their stoichiometric quantities. G1.1.2.3 Transformation HT of rapidly quenched Nb3Al precursor The Nb3Al phase in superconducting wires is produced during a Rapid Heating Quenching and Transformation (RHQT) process [xxix]. During a HT at roughly 1900 °C a Nb(Al)SS solid solution is obtained, which can be retained during rapid quenching to ambient temperature. The Rapid Heating and Quenching (RHQ) stages are followed by a transformation HT with a peak temperature of typically 800 °C, during which fine grained Nb3Al with high Al content is formed from the Nb(Al)SS solid solution. The phase evolution during this transformation HT can be studied in situ by high energy synchrotron X-ray diffraction [xxx]. The two-dimensional diffraction pattern acquired in transmission geometry with an area detector can be caked into sectors, in order to distinguish between reflections from the crystalline planes oriented both perpendicular and parallel to the wire drawing axis, which are in the following referred to as the axial and transverse directions, respectively. The pattern presented in [xxx] have been caked into 128 sectors. The 222 filament Nb3Al precursor wire without Cu stabiliser that was studied has a partial interfilamentary Ta matrix. Since the strain free Ta and Nb lattice parameters at RT differ by about 0.03 % only, these phases could not be distinguished by their lattice spacing. Therefore, in the following Nb diffraction peak refers to both overlapping peaks of Nb and Ta. The axial and transverse Nb (110) diffraction peaks of the RHQ wire are presented in Figure G1.1.2.9. The axial Nb (110) peak is about 8 times more intense than the transverse peak, which shows that the Nb (and/or Ta) texture, which is developed during the cold drawing of bcc metals, is partially retained during the RHQ process. The axial and transverse Nb peaks exhibit two maxima, which are characteristic for pure Nb and Ta (larger d-spacing) and Nb(Al)ss supersaturated solid solution (with roughly 1% smaller d-spacing). The evolution of the Nb (110), Nb3Al (200) and Nb3Al (211) diffraction peak shape and intensity during the RHQ Nb3Al precursor wire transformation HT with a ramp rate of 800 °C/h and a final 800 °C plateau lasting 30 minutes can be seen in Figure 5 of reference [xxx]. The Nb (110) peak shape change is caused by the vanishing of the Nb(Al)SS peak component, upon formation of Nb3Al. When heating with a ramp rate of 800 °C/h Nb3Al (200) and Nb3Al (211) peaks are detected at about 780 °C. When heating with a ramp rate of 160 °C/h the transformation from a Nb(Al)SS supersaturated solid solution into Nb3Al occurs at roughly 60 °C lower temperature than during the 800 °C/h HT [xxx]. 10 Figure G1.1.2.9. Axial and transverse Nb(110) diffraction peak, consisting of two components characteristic for pure Nb and for Nb(Al)SS. G1.1.2.4 Bi-2212 wire melt processing G1.1.2.4.1 Phase evolution during Bi-2212 wire melt processing In order to form well connected and textured Bi-2212 filaments, the Bi-2212 precursor particles in the as-drawn Bi-2212 PIT wire need to be melted when the wire is at its final size and shape [xxxi]. During the melt processing HT an external oxygen supply through the oxygen permeable Ag wire matrix is needed in order to re-form Bi-2212 out of the melt. The phase evolution during the melt processing HT can be studied in situ by high energy synchrotron XRD measurements. Oxygen can be supplied conveniently in a flow of air at ambient pressure, using the X-ray transparent furnace shown in Figure G1.1.2.2(a). The sequence of diffraction pattern acquired during the melt processing of a state-of-the-art Bi-2212 PIT wire in air (oxygen partial pressure pO2=0.21 bar) is presented in Figure G1.1.2.10 [xxxii]. An initial Bi-2212 diffraction peak growth with increasing temperature is observed, which is attributed to crystallization of Bi-2212 that was amorphized during the wire drawing process. The main impurity phase Bi-2201 is first detected when the temperature exceeds approximately 200 °C and a maximum amount of Bi-2201 is detected at about 500 °C. Bi-2201 decomposes completely at 850 °C, and reforms again upon cooling at approximately 850 °C. The diffraction peaks that occur upon Bi-2212 melting around 880 °C in a pO2=0.21 bar process gas have been tentatively identified as Cu-free phase Bi2(Sr4-yCay)O7. 2.252.272.292.312.332.352.37Intensity (a.u.)d-spacing (Å)axialtransverseNb(110)Nb(Al)SS(110) 11 Figure G1.1.2.10. Sequence of XRD patterns acquired during Bi-2212 wire HT in ambient air. The diffraction peaks which are labelled with arrows have been tentatively identified as the Cu-free phase Bi2(Sr4-yCay)O7). © IOP Publishing. Reproduced with permission. All rights reserved. Overpressure (OP) processing at pressures of up to 100 bar is a key for achieving homogeneous high critical currents in long lengths of Bi-2212 wires [xxxiii]. OP processing also enables varying the oxygen partial pressure in a wide range and it is of interest to verify how pO2 influences the phase sequence and the Bi-2212 precursor melting and recrystallization behaviours. In order to study the influence of pO2 on the Bi-2212 phase stability inside the Bi-2212/Ag wire by in situ high energy synchrotron XRD measurements, the high pressure cell and capillary furnace shown in Figure G1.1.2.2.(b,c) have been used. This furnace allows to explore pO2 above ambient pressure, with total process gas pressures up to 200 bar. Another advantage of this furnace is that 5 cm-long wire samples with closed ends identical to the samples typically used for Bi-2212 critical current measurements can be studied. The diffraction pattern acquired in situ during HTs at different pO2 show that increasing pO2 reduces the Bi-2212 stability [vi]. At pO2=1.5 bar Bi-2212 decomposes partly prior to melting, and the precursor decomposition temperature is about 20 °C lower than it is at pO2=1.05 bar. At pO2=5 bar the Bi-2212 precursor particles in the state-of-the art Bi-2212 multifilament wire decomposes completely in the solid state. G1.1.2.4.2 Void formation and redistribution during Bi-2212 wire melt processing Porosity and second phase particles formed during melt processing are considered to be the main current limiting defects in Bi-2212 wires. It is therefore of great interest to visualise and to quantify the porosity and second phase distribution during the different processing steps. 12 The potential of µ-CT to visualise these features inside a superconducting wire depends equally on the spatial and density resolution of the µ-CT experiment. The calculated linear absorption coefficients of 70 keV photons in the main wire constituents Ag and Bi-2212, and the main impurity phase Bi-2201, are µAg=40 cm-1, μBi−2212=15 cm-1 and µBi−2201=18 cm-1, respectively. Because of the different X-ray attenuation in Ag, Bi-2212 and porosity, high energy synchrotron µ-CT is particularly well suited to monitor Bi-2212 microstructure changes and the porosity formation and redistribution inside Bi-2212/Ag wires [xxxii]. On the other hand, because of the relatively small difference of the X-ray attenuation in Bi-2212 and Bi-2201, these phases cannot be distinguished in the X-ray absorption tomograms. The void redistribution during the melt processing of a 37x17 filament Bi-2212 wire at ambient pressure can be followed in the longitudinal µ-CT cross sections shown in Figure G1.1.2.11, which have been acquired in situ at different temperatures. In order to show a more detailed view of the voids the images have been cropped from the longitudinal cross sections showing the entire wire cross section. The black areas represent voids, the bright grey areas the strongly absorbing Ag matrix, and the dark-grey areas are Bi-2212 with a small amount of Bi-2201. Figure G1.1.2.11. Detailed view of Bi-2212 wire longitudinal tomographic cross sections acquired in situ at different temperatures during HT to Tmax=915 °C in air. A time lapse movie 13 showing the changes occurring over the whole heating and cooling cycle is available ( https://edms.cern.ch/document/1153082/1 ). © IOP Publishing. Reproduced with permission. All rights reserved. Filament microstructure changes can be first observed at about 850 °C when the Bi-2201 impurity phase decomposes (as seen in the simultaneously acquired XRD pattern). At this temperature the finely divided porosity, which is in the as-drawn wire uniformly distributed between the precursor particles, coalesces into lens-shaped defects. On Bi-2212 melting the lens-shaped voids grow to bubbles of a filament diameter. Upon cooling nucleation of Bi-2212 is first observed in the tomogram acquired at 877 °C at the filament periphery. The Bi-2212 formed upon cooling partly bridges the void space, but bubbles remain and cause an obstacle to the current flow in the Bi-2212 wires that are melt processed at ambient pressure [xxxiv]. The importance of complete Bi-2212 precursor melting is obvious when comparing the longitudinal µ-CT cross section acquired at the end of a processing HT to Tmax=915 °C, during which Bi-2212 was completely melted (G.1.1.2.12(a)), and to Tmax=875 °C, in which only a fraction of the Bi-2212 powder was melted (G.1.1.2.12(b)). The tomograms show clearly that after the Tmax=875 °C HT the filaments remain interrupted by a regular array of lens shaped voids, and that filament connectivity is only achieved after the porosity rearrangement that occurs during complete Bi-2212 melting and recrystallization. Figure G1.1.2.12. Tomographic cross sections of the Bi-2212wire acquired after in situ HT to (a) Tmax=875 °C and (b) Tmax=915 °C. 3D reconstructed images of selected filaments are shown in the insets. © IOP Publishing. Reproduced with permission. All rights reserved. The overall porosity volume in Bi-2212 wires that are short enough to allow relief of internal pressure through the open ends does not strongly change, because the Bi-2212 processing does not involve phase transformations associated with important density variations, as it is for instance the case in Nb3Sn conductors [xii]. In long Bi-2212 wires and in wires with closed ends, additional porosity is formed during processing at ambient pressure when internal gas 14 pressure leads to creep of the Ag matrix [xxxv]. OP pressing strongly reduces the porosity volume that is present in the as-drawn wire [xxxiii]. G1.1.2.5 Outlook Today the time resolved combined XRD and µ-CT experiments for in situ studies of superconductors that are described above can be routinely performed at advanced high energy synchrotron beamlines. The continuously improving brilliance of synchrotron sources and new efficient X-ray focusing optics make it possible to use nanometer scale X-ray beams, enabling new non-destructive in situ experiments on length scales that so far were only accessible to destructive techniques [xxxvi]. Grain size and grain orientation have a dominant influence on the performance of most superconductors, and studies of the thermal growth of grains and the grain orientation evolution are examples were future superconductor research can profit from new synchrotron experiments with X-ray nanobeams. Such studies can be performed in two dimensions, averaging over the sample depth that is penetrated by the X-ray beam. When applying tomographic methods (e.g. XRD-tomography [xxxvii]) spatially resolved in situ studies of phase composition, crystallite size distribution and texture become possible. Acknowledgments All XRD and µ-CT experiments presented here have been performed at the ESRF ID15 beamline. 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1806.01690	1	1806	2018-06-05T13:46:01	Study of Electromagnetic Properties of Pencil Drawn graphite composite Films on Paper	[ "physics.app-ph" ]	Graphite has been one of the promising materials in diverse application domains owing to its high conductivity, tunability into different structures and mechanical strength its. The effectiveness of graphite and its derivatives has been studied for electromagnetic domains as well. Pencil strokes on paper create a film of graphite composites which is reported to be useful for fabrication of electronic components. In our study, we extend use of pencil traces on paper for studying its electromagnetic properties. The pencil traces on paper is facile method of coating graphite composite films with relatively lower cost and ease of processing. The interaction of electromagnetic wave with graphite composites produces in modulation of the incident RF power. The RF power was observed to get attenuated with pencil coating on paper as compared to plain paper. The attenuation increased with increasing the signal frequency. Further, stacking more pencil coated papers onto each other results in increasing attenuation factor. Additionally, these pencil coated paper roll was able to attenuate the incoming noise signals in the radio signal reception. This demonstrates potential ability of pencil coated papers to be used for small RF power attenuation applications.	physics.app-ph	physics	Films on Paper. Amit R. Morarka, Aditee C. Joshi Study of Electromagnetic Properties of Pencil Drawn graphite composite Department of Electronic Science, Savitribai Phule Pune University. Pune-411 007. India E-mail: [email protected] , [email protected] Abstract Graphite has been one of the promising materials in diverse application domains owing to its high conductivity, tunability into different structures and mechanical strength its. The effectiveness of graphite and its derivatives has been studied for electromagnetic domains as well. Pencil strokes on paper create a film of graphite composites which is reported to be useful for fabrication of electronic components. In our study, we extend use of pencil traces on paper for studying its electromagnetic properties. The pencil traces on paper is facile method of coating graphite composite films with relatively lower cost and ease of processing. The interaction of electromagnetic wave with graphite composites produces in modulation of the incident RF power. The RF power was observed to get attenuated with pencil coating on paper as compared to plain paper. The attenuation increased with increasing the signal frequency. Further, stacking more pencil coated papers onto each other results in increasing attenuation factor. Additionally, these pencil coated paper roll was able to attenuate the incoming noise signals in the radio signal reception. This demonstrates potential ability of pencil coated papers to be used for small RF power attenuation applications. Keywords: Graphite, Pencil traces, RF power attenuation, 1.0 Introduction Graphite is one of the most potential materials due to its versatile properties in electrical, thermal and mechanical domains. Additionally graphite can be tailored into various forms like exfoliated graphite, colloidal graphite, flexible graphite, that has been explored in many applications [1-4]. It possesses good electrical conductivity, thermal conductivity; the higher conductivity in graphite can be attributed to availability of delocalized electrons for conduction. The conductivity values are comparable to that of metals. This electrical characteristic of graphite makes it useful candidate in applications for electromagnetism studies. As a result, much of research has been carried out to explore various applications of graphite and its different forms. Flexible graphite sheets have been reported to attenuate the electromagnetic radiation with a power attenuation value of 125-130 dB [4-7]. Furthermore graphite composites prepared with epoxy and polymers have proved to be useful in EMI shielding and microwave absorption properties [2-3].Amongst all the sources and structures of graphite, pencil lead happens to be one of the simplest and low cost source of graphite. Pencil, a routinely used writing tool contains graphite composites in its lead. It consists of graphite added together with intercalated clay and small amount of wax [8-10]. Pencil strokes on surface like paper yield a film of graphite composites. Such kind of Pencil drawn films on paper have yielded many applications including fabrication of passive components like resistor, capacitor and field effect transistors [11].However to the best of our knowledge electromagnetic properties of pencil drawn films on paper have not been explored. 1 In our study we have used pencil traces to make a film of graphite composites on paper sheets. For this purpose we have coated normal printing papers by putting pencil strokes. The pencil coated papers were characterized for structural characteristics of graphite composites and further investigated for RF power transmission and reception characteristics between the frequencies range 500 MHz-2.5 GHz. The RF power modulation was significant with the addition of pencil coated paper. Further, RF power variation got remarkably improved as number of layers of pencil coated papers was added. Through this study we report pencil traces as very facile and novel technique for modulating incident RF power. 2.0 Material and Methods 2.1 Instrument Details All the monopole antenna characteristic spectrum was recorded on vector network analyzer by Agilent Technologies E5062A with range of 300 KHz-3GHz. RF generator from Agilent Technologies, N9310A having range of 9kHz-3GHz was used to generate signal of a specific frequency and power. The transmitted power was measured by using a power meter 437B using 8481A power sensor from Hewlett-Packard. Raman spectrum was recorded using Renishaw Raman spectrometer and laser source with excitation wavelength 532 nm was used. Micro balance from Citizen (CX-165) has been used for weighing the plain papers and pencil coated papers. 2. 2 Experimental Procedure The substrate materials used were readily available printing paper (average of 10 samples , thickness measured using micrometer screw gauge-99.2 µm). The pencils used are 9B grade. The paper sheet is cut into a size of dimensions 21 cm x 7 cm. The complete area of paper was covered with pencil strokes to lead a conductive surface. The effective thickness of the coated graphite was measured by using gravimetric method. For this purpose the weight of the blank paper was recorded before coating and again after coating with pencil. By using the weight difference and other constants thickness of the coated graphite was calculated. Monopole antennae were fabricated for five different frequencies in range of 500 MHz- 2.5 GHz. For each frequency two antennae were fabricated; one is for transmitting the RF power and other as a receiver. Antenna responses were measured by using vector network analyzer. The characteristic spectrum for each antenna is given in supplementary information. For measuring the RF power attenuation characteristics a setup consisting of two monopole antennae, a mount for holding the pencil coated paper along with RF generator and power meter was used. Monopole antenna was used as a transmitter and a receiver as well. Each antenna was mounted on wooden stand and pencil coated paper was inserted in a mount made up 2 oard on a foa n-conducting ived power w the mount. T l setup is als cted power ced on same am base. In g in nature. was measure The schemat so given in from graphi e side of grap all set up ca For each fre ed using pow tic of the set Fig.1b. Add ite coated su phite coated are was taken equency RF wer meter us tup is given ditionally, se urface. In th d paper. The n to ensure t power is tra sing another in the follow etup was slig his, transmi photograph that all the m ansmitted th r monopole a wing Fig.1a ghtly change itting and re h of the setup mounts and s hrough the s antenna plac . The photog ed for meas eceiving ante p is shown i stands creen ced in graph uring ennae n fig. of cardbo were non and recei front of t of actual the reflec were plac 1c. Fig g.1a Schema atic of the set tup used for r RF power a attenuation. 3 Fig.1b Actual phot tograph of th he setup used d for RF pow wer attenuati ion. Fig.1c A Actual photog graph of the setup used f for measurin ng reflected p power from graphite surrface. 4 The obs Antenna deviation power w pencil co coatings. measurem and read other and erved value dimensions n in frequenc as received oated paper, Further sin ments were dings were r d RF power v e of antenn were slight cy. The actu on the powe initially the ngle pencil performed. repeated. In variation cha na frequency tly different ual frequency er meter dur e measurem coated pap Subsequentl this way to aracteristics htly differen y was sligh designed w than actual set on RF g y value was ement. In or ring measure made on blan ments were m was inserted per sheet w per sheet wa ly, other pap otal ten penc cil coated p d. was studied nt than the wavelength h generator suc rder to study nk paper wi into the m as added ove apers were designed v hence there w ch that maxi y the effect o ithout any p mount and p er previous p added onto value. was a imum of the pencil power paper each RF powe power. it er attenuation t is given as n was measu follows: ured by takin ng logarithm mic ratio of th he received p power to inc cident Atten nuation = 10 0 log (Preceive ed/ P transmitted d) 3.0 Res ults and D Discussion T The Raman s d spectra sho observed nd to the D, correspon m obtained fo spectrum the sp2 b bonded carbo d grain boun edges and spectrum re owed three p G and 2D b or pencil trac on lattice an ndaries ecorded on g prominent p bands, respe ce in previou d D band or graphite com eaks at 1346 ectively. This us report [1 riginates from mposite pow 6 cm-1, 158 s result is in 1]. The G b m the presen wder is show 1 cm-1 and 2 n accordance and arises fr nce of defec wn in Fig.2. 2720 cm-1 w e with the R from stretchi cts in the for . The which aman ng of rm of Fig.2 Ram man Spectra o of graphite c composite po owder. The aver for the gr such as 457.67 S rage thicknes raphite comp length and /m. ss of graphit posite was c area of pap te composite calculated us er on which e for all ten sing value of h coatings w papers was f resistance were made. ≈ 1.8 µm. of film and The conduc The conduc other dimen ctivity value ctivity nsions e was 5 R RF power res Then for each power. T rage value o and aver frequenc ies in the ran n average tra based on s given in th papers is 533 MHz z. It can be nt amount o significan response shows that to previo ous reports [4 F or all the ot 3,it can b be noted that sponse was h added pap of power w nge 500 MH ansmitted po he following observed fr f RF power RF power de 4-5]. her frequenc t as we incre monitored f er power wa was calculate Hz-2.5 GHz. ower. The av g Fig.3. The rom the grap that results ecays as we for blank pap as recorded a ed. This exp RF power a verage attenu graph show ph that addi in attenuati add number per and it w and readings xperiment w attenuation w uation value ws attenuatio ition of first on of RF po r of pencil co was consider s were repea was repeated was calculate e with additi on character t pencil coat ower at the r oated papers ed as a refer ated for ten t d for all the ed for each p ion of numb istic measur ted sheet ab receiver end s which is si rence times e five paper ber of red at bsorbs d. The imilar cies similar ease the frequ trend of pow uency the ch wer decay w haracteristic was observed attenuation d. As seen in also increase n Fig. ed. Fig.3 RF pow wer attenuatio on at different t frequencies with total num mber of pape rs added. The RF p can be d that out due to pe power attenu epicted that of the amou encil coated p uation throug as frequenc unt of power paper. gh all ten pap cy increases r transmitted pers at diffe RF power a d, substantia erent frequen attenuation a al amount of ncies is plott also increase f power is g ed in the Fig es. This indi getting dissip g.4. It icates pated 6 Fig.4 R RF power atten nuation at diff fferent frequen ncies for all te en papers add ded. T The RF powe th at certain skin dep papers on n the screen increasin ng amount of W We have obs apers. Furth coated p coated pape graphite same sid de of graphit was varied a surface w ng with incr decreasin wave it w will interfere m and maxim minimum d power vari observed with dist ance but afte each pen ncil coated p observed tha can be o decreasin ng indicativ acts like a m surface a ite and witho of graphi coated p papers and ies the diffe frequenc indicativ e of reduced well, this s shows decr er attenuatio n frequency n effectively f attenuation served that hermore, we ers. As show te coated pa and RF pow reasing dista e with incide mum power ation for 1.5 er that powe paper and m at as we de e of decrea metallic reflec out any grap without an erence in po d reflected po rease in refle on through a and conduc increasing t n for incident RF signal g e have studi wn in fig.1c apers. The d er was meas ance. Now ent wave. As r at differen 5 GHz frequ er was increa measured pow ecrease num ase in reflec cting surface phite coated p ny graphite ower with g ower. The sa ection power a specific ma ctivity. In ou the thicknes t RF power. gets attenua ied the refle we have ke distance betw sured. If the during dista s per the stan nt points. Th uency. Up to ased (inset fi wer for rema mber of grap cted compo e. We have o paper. Fig.5 coated pap graphite and ame trend is r with increa aterial depen ur study we ss of graphit nds on thick e keep incre te composite kness of mat easing numb es which hel terial, ber of lps in ated while p ection chara ept transmitt ween the rec ere is no refl ance variati nding wave t he followin o 40 cm dist ig. 5a). At th aining paper phite coated onent. This observed the 5c shows diff pers at the d without g observed fo asing frequen propagating acteristics of ting and rece ceiver antenn flection the p ions if there theory [12], ng graph in tance the po his distance w rs as indicat d papers the shows that e reflected p fference in po same dista graphite surf or different d ncy values. through gra f RF signal eiving anten na and refle power will g e is any refl this will res figure 5a s wer gets red we have rem ted by Fig. 5 e power goe graphite c power in pres ower for gra ance. For h face gets sm distance valu aphite from nna at ecting go on lected sult in shows duced moved 5b. It es on oated sence aphite higher maller ues as 7 (a) (b) Fig.5 a)R distance. RF power atte b) Attenuatio enuation 1.5 G on in reflected GHz for all te d power at 40 en papers add 0 cm distance ded. Inset show with decreas ws increase in e in number o n power at 40 of graphite co 0 cm oated papers. (c) Fig g.5 c) Change e in observed at same distan nce for graph hite coated pap pers and with hout papers . 3.1 Mech hanism of R RF signal att tenuation thr rough penci il coated pap pers A An electroma nteracting wi While in transmitt ted. For our apers. We h coated p agnetic wave ith medium p system we have observ e propagatin part of wave have studied ved the trans ng through a e is reflected d interaction smitted pow medium un d, absorbed n of electrom wer and refle ndergoes cha and remaini magnetic wa ected power ange in its po ing compone ave with gra r for variatio ower. ent is aphite on of 8 characteristic ansmitted c uency range. ver the frequ duced. The m loss gets red . e composite. when an elec that [13] w urface charge es. The elec ges, this res ne on charg lectromagne tic wave pro in the graph rges present ges present within the e the energy ve. Therefore ndicated by attenuation coated layer. cs the atten . This charac mechanism f nuation inc cteristic is s for this may reases with similar like m y be envisage h frequency metal where ed on the ba y and e high sis of ctromagnetic ctric field in sult in reduc opagates thr hite composit volume. T y of electrom in RF powe c wave prop nteraction wi ction in ene rough the pe te. Electric f This results magnetic wav er at the rece pagates throu ith charges ergy of wav encil coated field in elect in utilizatio ve decreases eiver output ugh a mediu results in ce ve. Applying paper it inte tromagnetic on of energ s as work is after propag um it ertain g this eracts wave gy of done gating ation depict ting probabl e signal tran nsmission th hrough a sta ack of ten p pencil in our syste her. The exp netic signal howed only cident signal we consider em we have panded view l propagatin two papers b enters throu signal atten e sequentiall w of the syst ng through but system e ugh the first nuation 'A' ly added num tem is illust a stack of extends for s pencil coate at each stag mber of pen trated in the f pencil coa stack of total ed paper the ge. The inci layers ncil coated l shows e Fig.6. It s . For ated papers. l ten papers. signal ampl litude ident signal from ies. For tra frequenc n reduces ov reflection y reflection frequency es of graphite propertie It is known I interacts with the su of work don amount o concept, when the el surface char with the does wo ork on charg agnetic wav electrom es. This is in on charg through f first pencil c ig. 6 Illustr F coated pa apers. urthermore, F to each oth adjacent electromagn incident simplicity y we have sh W When the inc ated. Here w is attenu 9 source can be considered as reference signal 100%. The output signal after passing through first pencil coated paper will be 100-A. It must be noted that the expressions used in the illustration are only for illustrative purpose. Now this attenuated signal acts as incident signal for second pencil coated paper which gets decreased to a value of 100-2A. This means that for the adjacent paper incident signal is attenuated signal from previous stage as depicted in figure. Therefore, as we stack number of papers signal strength is decreased as compared to original signal. The attenuation is more or less similar at each stage. But due to reduction in incident signal amplitude over cascaded stages it appears like attenuated signal amplitude is less than that of first paper. But it is noteworthy that the signal strength itself is less than the original signal so for the same attenuation factor the change may not seem cognizable for a single paper. However in case of stack of ten papers the total attenuation is an integral effect of attenuation at each stage. The attenuation effect was observed for higher frequencies as well. When the incident electromagnetic wave passes through the first pencil coated paper, the signal attenuation value for lower frequency was 10-15% while as we go for highest frequency attenuation is almost equal to 45%. It is known phenomena that at high frequencies inductive and capacitive reactances govern over resistive elements. Moreover characteristic impedance of graphite increases with increasing frequency [12]. This results in increased resistances leading to increased power dissipation within the material itself. Therefore attenuation increases significantly as compared to the lower frequencies. 3.2 Application of pencil coated papers in RF noise attenuation. In order to demonstrate the signal attenuation capacity of graphite coated papers, a small radio receiver and a control circuit was used as shown in the following Fig.7. The basic principle underlying the whole unit is whenever radio receives a particular signal the LED connected at the output will be switched on depending on the strength of received signal. The details of the control circuit are added in the supplementary information. 10 Fig. 7 Radi io receiver u nit connecte ed to control circuit. In this ci intensity applicatio supply u switches ircuit whene will be mo on we have using a relay on the LED ever there is odulated or L created the y kept adjac D as seen in F interference LED will k e interfering cent to the c Fig.8. e in radio sig eep blinking g noise sourc circuit. The gnal due to g with inter ce by contin continuous any periphe rfering radio nuously swi RF interfer eral sources, o signals. In itching a 9V rence from LED n our V DC relay Fig. 8 R Radio receive er unit receivin ng RF interfe erence from a a relay oscillat tor. 11 T This interfere vered the ent have cov six A4 si ize papers an lling of pap These ro nking disapp LED blin arising fr rom relay. ence from th tire relay an nd coated all ers added to peared as sh he surroundin nd battery wi l with pencil otal of 12 lay own in Fig. ng sources n ith our penc l strokes. Th yers. As we 9, which ind needs to be m cil coated pa hese papers w e kept the re dicates effec masked. For apers. We ar were rolled a elay unit insi ctive maskin r this purpos rbitrarily sel around relay ide paper ro ng of interfer se we lected y unit. oll the rence Fi ig.9. Masking g the relay osc cillator with p pencil coated paper roll. demonstrate t evice. This in aterial for RF the capability ndicates the p power attenu y of pencil possibility of uating applica coated pape employing g ations. ers to mask graphite comp the noise si posites from p ignals pencil ating paper raphite comp dent RF powe ed papers on wer attenuat ble to attenu pability of p with penci posites. The er. The atten nto each oth tion capacity uate the inco encil coated il strokes w e graphite co nuation chara her. The incr y for the in oming noise d papers to b was propos omposites in acteristic go reasing thick ncident signa e signals in be used for s sed for stud n the pencil ot improved a kness of gra al. Further, the radio s small RF p dying trace as we aphite these signal power bservations d ng any RF de a potential ma clusion novel meth agnetic prop modulation dding more p elps to enha oated paper n. This demo on applicatio These ob surroundi traces as a 4.0 Conc A very electrom provides go on ad layers he pencil co reception attenuatio hod of coa perties of gr of the incid pencil coate ance the pow roll was ab onstrates cap ons. 12 References 1. R. Song, Q. Wang , B. Mao , Z. Wang, D. Tang, B. Zhang , J. Zhang , C. Liu , D. He , Z. Wu, S. Mu, Flexible graphite films with high conductivity for radio-frequency antennas, Carbon 130 (2018) 164-169. 2. I V Senyk, V Z Barsukov, B M Savchenko, K L Shevchenko, V P Plavan, Yu V Shpak and O A Kruykova, Composite materials for protection against electromagnetic microwave radiation, IOP Conf. Ser.: Mater. Sci. Eng. 111 (2016) 012026:1-6. 3. S. Bellucci, F. Micciulla, V. M. Levin, Yu. S. Petronyuk,L. A. Chernozatonskii, P. P. Kuzhir, A. G. Paddubskaya, J. Macutkevic, M. A. Pletnev, V. Fierro, and A. Celzard, Microstructure, elastic and electromagnetic properties of epoxy-graphite composites, AIP Advances 5 (2015) 067137:1-10. 4. X. Luo , D. D. L. Chung, Electromagnetic Interference shielding reaching 130 dB using flexible graphite. Carbon 34 (1996) 1293-1303. 5. X. Luo, R. Chugh, B. C. Biller, Y. Meng Hoi, and D.D.L. Chung, Electronic applications of flexible graphite, J. of Electronic Materials. 31 (2002) 535-544. 6. X. Luo, D.D.L. Chung. Electromagnetic Interference shielding reaching 130 dB using flexible graphite. Mat. Res. Soc. Symp. Proc. 445 (1997) 235-238. 7. D.D.L. Chung, Electromagnetic interference shielding effectiveness of carbon Materials. Carbon 39 (2001) 279–285. 8. S. Cain, A. A. Cantu, R. Brunnelle and A. Lyter, A scientific study of pencil lead components. J. Forensic Sci. 23 (1978) 643–661. 9. J. A. Zoro and R. N. Totty, The Application of Mass Spectrometry to the Study of Pencil Marks, J. Forensic Sci. 25 (1980) 675–678. 10. J. A. Denman, I. M. Kempson, W. M. Skinner and K.P. Kirkbride, Discrimination of pencil markings on paper using elemental analysis: an initial investigation, Forensic Sci. Int. 175 (2008) 123–129. 11. N. Kurra, D. Dutta and G. U. Kulkarni, Field effect transistors and RC filters from pencil- trace on paper, Phys. Chem. Chem. Phys., 15 (2013) 8367-8372. 12. John D. Kraus, Keith R. Carver. Electromagnetics, second edition. Mc Graw Hill Kogakusha,1973. 13. David J. Griffiths. Introduction to Electrodynamics, Third Edition. Pearson Education(Singapore) pte ltd, Delhi, India,2003. 13 Supplemen ntary Inform mation Monopo Monopol Antenna for each antenna p le Antenna le antennae w responses w antenna is pair, the obs Response were fabrica was measured given in fo erved freque ated for five d by using v following fig ency compon different fre vector netwo gures. S11 m nent and its h equencies in ork analyzer measurement harmonics is range of 50 r. The charac ts were per s shown in f 00 MHz-2.5 cteristic spec rformed for following fig GHz. ctrum each gures. Fig g. S1 Antenn nae spectrum m for design f frequency of f 500 MHz. F Fig. S2 Anten nnae spectru um for design n frequency of 1GHz. 14 Fi g. S3 Antenn nae spectrum m for design n frequency o of 1.5GHz. Fi ig. S4 Anten nnae spectrum m for design n frequency of 2 GHz. Fig g. S5 Antenn nae spectrum m for design frequency o of 2.5 GHz. 15 Details o The circu remote s senses th audio sig used in o of Radio con uit shown in tart a tape r he audio sig gnal is receiv order to act a ntrol circuit t is a radio co n figure S6 recorder, sw witch on a ca which is furt gnal input w the output w ved LED at t as control sw witch for the ontrol circui amera or an her processe will be switch connected d it. That is fr ny other app ed, amplifie hed ON. In p devices. requently us pliance. This ed and drive place of LED sed to contro s circuit basi es a LED. D relay is m ol the ically Once mostly Fig. S ation we ha to work AM cy so there is emains swit terference R witched ON. circuit. Whe layers radio S6 Schemati ave connecte M mode of o s no signal r ched OFF. T RF signal cre . Now the re en relay osc o control circ ic of Radio c ed a radio re operation. Th received at th The momen eated from o elay oscillato illator was s cuit was not control circu eceiver at au he receiver i he input of o nt we place a oscillator is s or is covered switched ON t receiving R uit udio input o is not tuned our control c a relay oscil sensed by co d by pencil c N it generat RF signal an f the circuit to any parti circuit. Ther llator adjace ontrol circui coated paper ted RF signa d hence LED t. The icular refore ent to it and rs and al but D did In n our applic radio rec ceiver is set ion frequenc AM stati LED at t the output re circuit the in control c subseque ently LED sw ear control c placed ne encil coated due to pe not switc ch ON. 16
1905.08024	1	1905	2019-03-23T16:41:02	Novel high efficiency quadruple junction solar cell with current matching and quantum efficiency simulations	[ "physics.app-ph", "physics.optics", "physics.space-ph" ]	A high theoretical efficiency of 47.2% was achieved by a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in a simulated quadruple junction solar cell under 1 sun concentration. The electronic bandgap of these materials are 1.9 eV, 1.42 eV, 1.08 eV and 0.55 eV respectively. This unique arrangement enables the cell absorb photons from ultraviolet to deep infrared wavelengths of the sunlight. Emitter and base thicknesses of the subcells and doping levels of the materials were optimized to maintain the same current in all the four junctions and to obtain the highest conversion efficiency. The short-circuit current density, open circuit voltage and fill factor of the solar cell are 14.7 mA/cm2, 3.38 V and 0.96 respectively. In our design, we considered 1 sun, AM 1.5 global solar spectrum.	physics.app-ph	physics	Article published in Solar Energy, v.139, 1 December 2016, p.100-107 https://doi.org/10.1016/j.solener.2016.09.031 Novel High Efficiency Quadruple Junction Solar Cell with Current Matching and Quantum Efficiency Simulations Mohammad Jobayer Hossaina, Bibek Tiwaria, Indranil Bhattacharyaa a ECE Department, Tennessee Technological University, Cookeville, Tennessee, 38501, USA Abstract: A high theoretical efficiency of 47.2% was achieved by a novel combination of In0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers in a quadruple junction solar cell simulation model. The electronic bandgap of these materials are 1.9eV, 1.42 eV, 1.08 eV and 0.55 eV respectively. This unique arrangement enables the cell absorb photons from ultraviolet to deep infrared wavelengths of the sunlight. Emitter and base thicknesses of the subcells and doping levels of the materials were optimized to maintain the same current in all the four junctions and to obtain the highest conversion efficiency. The short-circuit current density, open circuit voltage and fill factor of the solar cell are 14.7 mA/cm2, 3.3731 V and 0.9553 respectively. In our design, we considered 1 sun, AM 1.5 global solar spectrum. Keywords: Novel solar cell, multijunction, quantum efficiency, high efficiency solar cell, current matching, optimization. Introduction 1. The inability of single junction solar cells in absorbing the whole solar spectrum efficiently and the losses occurred in their operation led the researchers to multijunction approach ( Razykov et al., 2011; Xiong et al., 2 010). A multijunction solar cell consists of several subcell layers (or junctions), each of which is channeled to absorb and convert a certain portion of the sunlight into electricity. Each subcell layer works as a filter, capturing photons of certain energy and channel the lower energy photons to the next layers in the tandem. The subcell layers are connected in series providing a higher voltage than single junction solar cells. Thus, utilizing the best photon to electricity conversion capability of each subcell, the overall efficiency of the cell is increased (Leite et al., 2013). There are two methods of light distribution to the subcells in a multijunction cell. The first method uses a beam splitting filter to distribute sunlight to the series connected subcells and in the second method the subcell s are mechanically stacked together (Imenes et al., 2004; Leite et al., 2013). The portion of the solar spectrum a subcell will absorb depends on the bandgap of the material used. Higher bandgap materials absorb higher energy photons and give relatively higher amount of voltage. Since number of higher energy photons is limited, number of excitons (electron-hole pair) generated and current is limited. On the contrary, materials with lower bandgap absorb lower to higher energy photons and give lower voltage but higher current. Therefore, choosing an appropriate set of high to low bandgap materials is important in multijunction solar cell design. This job can be challenging because the adjacent subcells should also be lattice matched to minimize threading dislocations (Patel, 2012).The presence of dislocation reduces the open circuit voltage (Voc) and hence the overall conversion efficiency of the solar cell (Yamaguchi et al., 2005). Fortunately, there are some technologies that allow lattice mismatch up to certain limits. Metamorphic design uses buffers to limit formation of dislocations (King et al., 2007). Inverted metamorphic technology is a modified version of metamorphic technique where some cells are at first grown on a temporary parent substrate. The cells are then placed on the final substrate upside down and the temporary parent substrate is removed (Wanlass et al., 2015). Direct wafer bonding is another way which forms atomic bonds between two lattice mismatched materials at their interface and thus eliminates the dislocations (Moriceau et al., 2011). Some authors utilized this method successfully to address relatively higher mismatch value like 3.7% and 4.1% (Dimroth et al., 2014; Kopperschmidt et al. 1998). After choosing the appropriate materials, current matching becomes the most important task in the d esign procedure. Since the subcells are connected in series, the lowest current density determines the overall current density of the cell. If current values are not matched, the excess current in the subcells other than the subcell with lowest current density gets lost as heat. The impact is twofold: firstly, some energy is lost; secondly, the heat generated deteriorates the cell performance further. Solar cell is an excellent renewable power source. However, higher conversion efficiency and cost-effectiveness have been the major issues (Hossain et al., 2016). Theoretically a multijunction solar cell can provide 86.4% conversion efficiency with infinite number of junctions (Yamaguchi, Luque, 1999). Of course, manufacturing cost increases if higher numbers of junctions are used. When cost is an important factor in determining the market share of solar modules in the current power sector, we want to design a solar cell which has lesser number of junctions but gives relatively higher efficiency. The calculations using detailed balance method shows that, the highest efficiency achievable from a quadruple junction solar cell is 47.5% for single sun condition and 53% for maximum concentration of sunlight (Yamaguchi et al., 2004; King et al., 2009). This theoretical approach assumes ideal cases i.e. no reflection loss, zero series resistance of subcells and tunnel junctions, 300K temperature and no re-absorption of emitted photons (Leite et al., 2013). However, the highest practical efficiency achieved till now is only 46.0% which assembled four subcells with concentrators (http://www.nrel.gov). For 1-sun condition the efficiency is noticeably lower; 38.8% using five subcells (http://www.nrel.gov). Solar energy ranges from ultraviolet to infrared region. Previously InGaP/GaAs/InGaAs (Wojtczuk et al., 2013) based triple junction solar cell was proposed which cannot capture much in the infrared region. To utilize infrared portions too, Ge was used as a bottom subcell layer (Yamaguchi et al. 2004; King et al., 2012; Green et al., 2015). Bhattacharya et al. proposed another material, InGaSb which is good at capturing infrared photons (Bhattacharya, Foo, 2013). It was used in GaP/InGaAs/InGaSb based triple junction solar cell later on (Bhattacharya, Foo, 2010; Tiwari et al., 2015; Tiwari et. al., 2016). In this paper, we propose an In0.51Ga0.49P/GaAs/In0.24Ga0.76As/In0.19Ga0.81Sb based quadruple junction solar cell for the first time. The electronic bandgap of these materials are 1.9 eV, 1.42eV, 1.08 eV and 0.55 eV respectively which help proper distribution of light to all the junctions. The first two junctions are lattice matched. Lattice mismatch between GaAs and InGaAs is 2.78% when it is 5.59% between In0.24Ga0.76As and In0.19Ga0.81Sb. Appropriate fabrication technique like metamorphic, inverted metamorphic or wafer bonding needs to be used to make the structure defect free. The simulation result shows that current density is same in all the junctions. This reduces the possibility of energy loss and performance deterioration. The theoretical efficiency of the cell is 47.2%. This value is higher than the present record efficiency quadruple junction solar cell with concentrators (46.0%) (http://www.nrel.gov). 2. Proposed Quadruple Junction Solar Cell Material selection with proper bandgap is an important factor in designing high efficiency multijunction solar cell. III-V compound semiconductors are generally chosen because of their bandgap tunability through elemental composition. These compound semiconductor alloys have band gaps ranging from 0.3 to 2.3 eV which cover most of the solar spectrum (Leite et al., 2013). The proposed novel quadruple junction cell is also designed from III-V compounds, comprising InGaP, GaAs, InGaAs and InGaSb subcell layers respectively. AR TiO2 + MgF2 n - InAlP Window n -- InGaP Emitter p -- InGaP Base p -- InGaP BSF p++ - TJ n++ - TJ n -- GaAS Emitter p -- GaAs Base p -- GaAs BSF p++ - TJ n++ - TJ n -InGaAs Emitter p -InGaAs Base p -InGaAs BSF n - InGaAs Step-graded buffer p++ - TJ n++ - TJ n+ - InGaSb Emitter p - InGaSb Base and Substrate Contact Fig.1.Structure of the novel quadruple junction solar cell A. Structure The quadruple junction solar cell consists of four subcells connected in series, as shown in Fig. 1. Each subcell has three parts: n type emitter, p type base and a back surface field (BSF) layer. Base is made thicker than emitter because of the work function of p type base being higher than n type emitter layer. The electron-hole pairs (excitons) are generated in the p-n junction formed in the interface between emitter and base which contributes to the photocurrent. The back surface field is made of the same material. It fixes dangling bonds and thus reduces surface recombination. Two adjacent subcells are connected together by tunnel diodes. Higher level of doping is used to design these tunnel diodes which help them not absorb light and exhibit tunneling effect. Antireflection (AR) coating is a special type of layer used to reduce reflection of light fallen on the solar cell (Saylan et al., 2015). With double layer TiO2+MgF2 antireflection coating, reflection loss can be reduced to 1%. The window layer acts as a means of light passage to the p-n junction. It protects the cell from outside hazards too. Step graded buffers are used to eliminate the threading dislocations formed between In0.24Ga0.76As and In0.19Ga0.81Sb lattice mismatched subcells. The front and back contacts are used to collect photocurrent from the solar cell. B. Material Properties The material properties considered for the design are summarized in Table I. Most of the properties are temperature dependent. All through the design process we considered 300K temperature. The top subcell is made of a high bandgap material, In0.51Ga0.49P with bandgap of 1.9 eV (Schubert et al., 1995). This enables it to absorb photons in the ultraviolet region efficiently. GaAs has bandgap of 1.42 eV which empowers it to absorb most of the sunlight in visible range. The bandgap of In1-xGaxAs is (0.36+0.63x+0.43x2) eV (http://www.ioffe.rssi.ru). With x=0.76, it becomes 1.08 eV. The bottom subcell is made of low bandgap material, In0.19Ga0.81Sb whose bandgap may be expressed as, Eg= (0.7137-0.9445x+0.3974x2) eV (Zierak et al., 1997), where x is the indium composition. With x=0.19, bandgap becomes 0.55 eV. Due to this lower bandgap value it can absorb in infrared region. The doping level of emitter is higher than base. Window layer is normally made of higher bandgap and highly doped n type material. Due to the high doping used and very little thickness, it does not absorb any photon and passes light to the subcells next in the tandem. The doping level of tunnel junction is even higher. The lattice constant of a material also depends on the composition. GaAs has a lattice constant of 5.65325 Å (http://www.ioffe.rssi.ru). The general expressions of lattice constants for In1-xGaxP, In1-xGaxAs and In1-xGaxSb are (5.8687-0.4182x) Å, (6.0583-0.405x) Å and (6.479-0.383x) Å respectively (http://www.ioffe.rssi.ru). The values become 5.653 Å, 5.8153 Å and 6.16 Å for In0.51Ga0.49P, In0.24Ga0.76As and In0.19Ga0.81Sb respectively. Since all these four materials have the same zinc blende crystal structure, defects occurred from the lattice mismatch can be easily eliminated by adopting appropriate technology i.e. metamorphic, inverted metamorphic, wafer bonding etc. Step graded buffers used in this structure solves the dislocation problem further. Minority carrier lifetime is another important parameter. If it is very low then some of the photocurrents are lost before they can be collected. It is in the order of 10-3 s for In0.51Ga0.49P and 10-8 s for GaAs (Sun et al., 2015). For In0.24Ga0.76As, carrier lifetime depends on doping level through the relation, τ= (2.11104 +1.4310-10N+8.110-29N2)-1 s (Ahrenkiel et al., 1998), where N is the doping density and τ is the carrier lifetime. Front and back contacts are made of metals having very low resistances so that they can collect the generated photocurrent without any loss. The doping concentration for emitter of each subcell was designed to be in the order of 1018/cm3. The highest value of doping concentration for base is in the order of 1017/cm3. Surface recombination velocities of the materials used are in the order of 105 cm/s (Thiagarajan et al., 1991; Boroditsky et al., 2000; Tanzid, Mohammedy, 2010). Therefore recombination losses were considered in the design. MATERIAL PROPERTIES ASSUMED FOR THE DESIGN TABLE I Material Properties Bandgap (eV) Lattice Constant (Å) Intrinsic Carrier Concentration (/cm3) Surface Recombination velocity (cm/s) Dielectric Constant 3. Design Approach Diffusion Coefficients Minority Carrier Lifetime (s) Doping Electron Hole Electron Hole Emitter Base Top subcell (In0.51Ga0.49P) 1.9 5.653 1103 4105 11.8 26.8 3.8 0.110-3 0.110-3 8.51018 3.51017 Subcell-2 (GaAs) 1.42 5.65325 1.79105 5105 12.9 200 0.5 10-8 10-8 3.51018 1.11015 Subcell-3 (In0.24Ga0.76As) 1.08 5.8153 1.31109 1104 13.3058 220 0.09 1.356210-7 1.4149x10-10 8.51018 51016 Bottom Subcell (In0.19Ga0.81Sb) 0.55 6.16 2.51013 0.5105 16 297.7030 0.5170 910-9 910-9 8.51018 3.51017 l e ) (4) ( ) ) ) ( To design the quadruple junction solar cell we made some assumptions that are generally done for simplification in solar cell modeling. These assumptions are (Kurtz et al., 1990): transparent tunnel junction interconnects with no resistance, no reflection loss and no series resistance loss in the junctions and p-n junctions formed are ideal (diode ideality factor, n is equal to 1).According to these assumptions, if a photon is absorbed by a subcell, one exciton (electron-hole pair) is generated. The fraction of the total number of photons absorbed in a subcell is determined by We considered global AM 1.5 solar spectrum for photon flux incident on the solar cell. The top subcell absorbs a portion of this incident photon flux. The rest is transmitted to the next subcells. Thus, the photons incident on a collected the absorption data of In.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb from Schubert et al.,1995, Adachi, 2009, http://www.ioffe.rssi.ru and Zierak et al., 1997 respectively. the thickness (𝑥𝑥𝑖𝑖) of that subcell and the absorption coefficient (𝛼𝛼) of the constituent material.For our design, we subcell depends on the properties of the other subcells stacked above it in the tandem. If ∅𝑠𝑠 is the photon flux falling on the top subcell, the amount incident on any mth subcell lying below, ∅𝑚𝑚(𝜆𝜆)can be expressed as equation (1). The (QE) of that subcell. It depends on absorption coefficient𝛼𝛼(𝜆𝜆), base thickness𝑥𝑥𝑏𝑏, emitter thickness𝑥𝑥𝑒𝑒, depletion width 𝑊𝑊,base diffusion length 𝐿𝐿𝑏𝑏, emitter diffusion length 𝐿𝐿𝑒𝑒, surface recombination velocity in base 𝑆𝑆𝑏𝑏, surface recombination velocity in emitter 𝑆𝑆𝑒𝑒, base diffusion constant 𝐷𝐷𝑏𝑏 and emitter diffusion constant 𝐷𝐷𝑒𝑒, as given in percentage of absorbed photons converted into electron-hole pair in a subcell is called internal quantum efficiency equation (2) through (8). ∅𝑚𝑚(𝜆𝜆)= ∅𝑠𝑠(𝜆𝜆)𝑒𝑒𝑥𝑥𝑒𝑒 [−∑ 𝑚𝑚−1 𝑖𝑖=1 𝛼𝛼𝑖𝑖(𝜆𝜆)𝑥𝑥𝑖𝑖 ] ( e = base QE emitter =    x b L b             x e L e    x e L e x − α e ) ( x − α e ) × − exp l b cosh l e cosh l e sin h exp ( + sinh + L α e + sinh + cosh − L α e QE ( f L e α ( L α b             ( f L b α (2) (3) emitter exp x e L e x e L e        x Wα − + (1) = QE QE QE =    L α  b   QE + depl 1 exp −   QE + ( x α − e        exp × base ) W α −         From equation (2), it is evident that the quantum efficiency of emitter, base and depletion region, all contribute to the overall quantum efficiency of the cell. Among the deciding factors of quantum efficiency, absorption coefficient, surface recombination velocity, diffusion length etc. are material properties which cannot be tuned once a particular material is chosen. However thickness can be easily varied in design process to obtain the highest possible quantum efficiency. The two quantities xe/Le and xb/Lb are significant in the expression for emitter and base quantum efficiency. This gives an idea that the capability of tuning quantum efficiency by changing thickness is limited by the diffusion length of the material used. The value of fα(Le) and fα(Lb) in equation 4 and 5 can be found from equation 7 by placing L= Le and L= Le respectively. Since we assumed no reflection loss due to the usage of double layer antireflection coating, internal quantum efficiency equals the external quantum efficiency. Changes in the quantum efficiency values with the change in thickness was investigated and illustrated in Fig. 2(a) through 2(d). We noticed that quantum efficiency increases with increase in base thickness up to a certain limit. After that, an increase in base thickness has no or little impact on quantum efficiency. Increase in emitter thickness on the contrary decreases quantum efficiency in most cases. The reason behind this is, work function for hole is greater than the       S L e e D e   x b   L   b   x b   L   b (6) ( L α )2 1 − S L b b D b l = e fα ( ) L + cosh x α − b l = b l b sin h L α = ) exp (    x b L b − l b (5) (8) ) − + depl )    (7) electron. If emitter (n type) thickness increases, it absorbs some extra energy that would otherwise be absorbed in base (p type). Thus hole generation being impeded, quantum efficiency decreases. 2(a) Top subcell (InGaP) 2(b) Second subcell (GaAs) 2(c) Third subcell (InGaAs) 2(d) Bottom subcell (InGaSb) Fig. 2. Change of quantum efficiency with change in thickness The short circuit photocurrent density 𝐽𝐽𝑠𝑠𝑠𝑠, obtained in a subcell depends on the quantum efficiency and the photon flux ∅𝑖𝑖𝑖𝑖𝑠𝑠incident on that subcell as follows, Here e is the charge of an electron (1.6×10-19 C). The incident photon flux ∅𝑖𝑖𝑖𝑖𝑠𝑠 dependson the order of the subcell and geometry of the subcells above, as given in equation (1). In a solar cell, photocurrent is generated due to the ) ( )d λ λ ( ) QE λ Φ (9) = J inc ∞ e ∫ 0 ( SC photogenerated open circuit voltage can be written as, minority electrons in the base and the minority holes in the emitter. Little amount of reverse current is also generated due to the majority carriers, which is a loss for solar cell. This current density is called dark current density (𝐽𝐽0).The Where K is the Boltzmann constant and 𝑘𝑘 is the temperature in degree kelvin. Using the diode characteristic equation, we determine the effective photocurrent of a subcell as, 𝑉𝑉𝑂𝑂𝑂𝑂≈(𝑘𝑘𝑘𝑘/𝑒𝑒)ln (𝐽𝐽𝑆𝑆𝑂𝑂/𝐽𝐽𝑜𝑜) 𝐽𝐽=𝐽𝐽𝑜𝑜�exp�𝑒𝑒𝑉𝑉𝑛𝑛𝑛𝑛𝐵𝐵𝑘𝑘 �−1�−𝐽𝐽𝑆𝑆𝑂𝑂 � (10) (11) 3(a) Top subcell (InGaP) 3(b) Second subcell (GaAs) 3(c) Third subcell (InGaAs) 3(d) Bottom subcell (InGaSb) Fig. 3. Change of J-V curve with change in doping In our design approach, we have assumed each subcell as an ideal diode. Therefore diode ideality factor, n=1. Now, J-V characteristics of the subcells can be presented as change in current density (J) with respect to corresponding change in voltage obtained (V). These characteristics depend on material properties as well as design parameters like thicknesses and doping levels of the subcells. The impact of thickness variation on cell was discussed earlier in fig 2. The impact of doping variation on current density and voltage produced is demonstrated in Fig. 3(a) through 3(d). All through this analysis, thicknesses of emitter for top, second, third and bottom subcells were kept unchanged at 30 nm, 40 nm, 70 nm and 130 nm respectively. The base thicknesses were 500 nm, 1000 nm, 1500 nm and 2200 nm respectively. As in Fig. 3(a), 3(b), 3(c) and 3(d), decrease in base doping decreases photovoltage and increases photocurrent. When emitter doping is decreased, it caused no or little decrease in voltage, the current being unchanged for the first three cases. For the bottom subcell, decrease in emitter doping decreases both voltage and current. In a multijunction solar cell all the subcells are connected in series. Therefore, current matching is very important. If current density in all the subcells are not matched, the excess current in a subcell, being unable to flow, will be lost as heat. This thermalization will also give rise to deteriorated cell performance. In a current matched cell, the current density of the overall cell is the current density of any particular subcell, 𝐽𝐽. Also, the total open circuit voltage is the sum of the voltages in the subcells. Fill factor for a solar cell can be empirically expressed as (Green, 1981), 𝑉𝑉𝑡𝑡𝑜𝑜𝑡𝑡𝑡𝑡𝑡𝑡= ∑ 𝑉𝑉𝑖𝑖𝑚𝑚𝑖𝑖=1 (12) FF = V − OCnormalised V OCnormalised ln( V OCnormalised 1 + + 0.72) Where, OCnormalised V = e nkT V OC (13) Fill Factor (FF) Efficiency (%) × J sc η = (14) ) 3 m c / ( × FF 100% V oc P in TABLE II Parameters y t i s n e D g n i p o D DESIGN OPTIMIZATION FOR HIGHEST EFFICIENCY Finally, the conversion efficiency of a solar cell is, × Here Pin is the input power (sunlight) to the solar cell. In standard test case it is 1000 W/m2 for global AM 1.5 solar spectrum. The numerator expresses the power generated (electricity) from the solar cell per square meter. Doping and thickness value of the subcells were tuned to achieve the highest efficiency possible. The optimization trial is given in table 2. Emitter 1 Base 1 Emitter 2 Base 2 Emitter 3 Base 3 Emitter 4 Base 4 Emitter 1 Base 1 Emitter 2 Base 2 Emitter 3 Base 3 Emitter 4 Base 4 Subcell 1 Subcell 2 Subcell 3 Subcell 4 Design 2 8.5×1018 7.5×1016 3.5×1018 0.3×1015 8.5×1018 0.7×1015 9.0×1018 8.5×1016 Design 3 8.5×1018 7.5×1016 3.5×1018 0.4×1015 8.5×1018 0.7×1015 9.0×1018 8.5×1016 Design 1 6.5×1017 3.5×1016 3.5×1017 0.1×1015 8.5×1017 0.2×1015 9.0×1017 8.5×1015 8.5×1018 3.5×1017 3.5×1018 1.1×1015 8.5×1018 1.5×1016 8.5×1018 3.5×1017 Matched Current, Jsc (mA/cm2) Open Circuit Voltage, Voc (V) Optimized Design m n ( s s e n k c i h T e g a t l o V ) V ( ) 45 220 65 700 95 1540 150 2820 1.3313 0.9892 0.6152 0.1627 15.0 3.0984 0.9521 44.1 30 270 55 700 70 1460 120 2200 1.3579 1.0251 0.6413 0.2130 14.9 3.2419 0.9538 46.0 45 300 65 900 90 1540 150 2220 1.3596 1.0236 0.6415 0.2173 14.7 3.2420 0.9538 45.3 30 400 40 1310 70 1870 140 2200 1.4012 1.0663 0.6635 0.2422 14.7 3.3731 0.9553 47.2 In the first design all the base (p type) doping were kept in the order of 1017/cm3 and emitter in the order of 1015 and 1016 /cm3. Emitter thickness values were set to 45, 65, 95 and 150 nm for first, second, third and fourth subcell respectively. Base thicknesses were set to 220, 700, 1540 and 2820 nm respectively. With this arrangement, 44.1% conversion efficiency was found. Doping level was increased in the second design. Thickness values were also changed accordingly to match the short circuit current density at 14.7 mA/cm2. This led to the increase of efficiency value to 45.3%. Thickness values were changed in design 3 keeping the doping level unchanged, except in base of subcell 2. With this trial open circuit voltage decreased little bit. However, the considerable increase in 2mA/cm2 current contributed to the increased efficiency of 46.0 %. Finally, both doping and thickness values were tuned to different values. This step resulted in 47.2% efficiency with short circuit current density of 14.7 mA/cm2, open circuit voltage of 3.3731 V and fill factor of 0.9553. 4. Analysis of the Optimized Design A. Quantum Efficiency The cell was simulated to inspect its quantum efficiency and current density in each of the subcells. We considered global AM 1.5 solar spectrum for the simulation purpose. The internal quantum efficiency (IQE) plot in figure 4 clearly illustrates the absorption properties of the subcells as a function of wavelength. The top subcell, constructed from In.51Ga0.49P showed good exciton (electron-hole pair) generation behavior in the higher frequency visible range. As in figure 4, its IQE was more than 90% for green light. GaAs subcell started absorbing when the top subcell was absorbing lesser number of photons. Its IQE was more than 90% in between 500 nm and 828 nm wavelength. It was placed below the top subcell in the stack so that the unabsorbed light can be absorbed by the second subcell. In0.24Ga0.76As showed excellent IQE characteristics in a broad range. Note that, its IQE vale is comparable with GaAs in 500 nm - 828 nm range. If GaAs were not used in the second subcell, the generated current density through In0.24Ga0.76As would be so high that current matching would be very difficult, resulting in lower cell efficiency. The bottom subcell, In0.19Ga0.81Sb absorbed well in the infrared region unlike other subcells. The design ensured the right proportion of light distribution among all the subcells so that generated currents can be easily matched. Fig.2. Internal quantum efficiency plot of the individual junctions Fig. 4. Quantum efficiency plot of the individual junctions in the optimized design B. J-V Curve Figure 5 gives an idea about the yield of the corresponding subcells. The top subcell generates the highest voltage 1.4 V with the lowest current of 14.7 mA per 1 cm2 area. The bottom subcell on the contrary gives the lowest voltage (V) of 0.23 V with the highest current density (J) of 50 mA/cm2. Second and third subcell followed this trend. Thicknesses of the subcells were tuned to attain current matching. In multijunction arrangement, the subcells are connected in series. Therefore, if current is not matched, the excessive current in a subcell, being unable to flow, would be lost as heat and the high temperature could harm the cell further. The J-V curve after current matching is shown in Fig 5(b). (a) (b) Fig. 5. J-V curve of the cell, (a) before current matching, (b) after current matching C. Non Ideal Diode Previously we considered ideal diode with diode ideality factor if n=1. But in practical case this value is always greater than unity. Change in efficiency of the optimized design was inspected with variation in diode ideality factor value. As illustrated in Fig. 6, both the fill factor and efficiency decreases linearly with increase in ideality factor, n. Fig. 6. Variation of fill factor and efficiency with diode ideality factor In case of the best diode ideality factor, efficiency of the proposed optimized design is 47.2%. For a very bad junction diode with n=2, efficiency drops to 45.5%. This value is higher than the present record efficiency quadruple junction solar cell in single sun concentration (http://www.nrel.gov/). 5. Conclusion A quadruple junction solar cell comprising In0.51Ga0.49P, GaAs, In0.24Ga0.76As and In0.19Ga0.81Sb subcell layers is proposed in this paper. This novel III-V combination gives high conversion efficiency of 47.2% for AM 1.5 global solar spectrum under 1 sun concentration. After careful consideration of important semiconductor parameters such as thicknesses of emitter and base layers, doping concentrations, minority carrier lifetimes and surface recombination velocities, an optimized quadruple junction design has been suggested. 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1704.06565	3	1704	2018-06-27T14:01:54	An efficient method to estimate sorption isotherm curve coefficients	[ "physics.app-ph", "math.NA", "physics.class-ph" ]	This paper deals with an inverse problem applied to the field of building physics to experimentally estimate three sorption isotherm coefficients of a wood fiber material. First, the mathematical model, based on convective transport of moisture, the Optimal Experiment Design (OED) and the experimental set-up are presented. Then measurements of relative humidity within the material are carried out, after searching the OED, which is based on the computation of the sensitivity functions and a priori values of the unknown parameters employed in the mathematical model. The OED enables to plan the experimental conditions in terms of sensor positioning and boundary conditions out of 20 possible designs, ensuring the best accuracy for the identification method and, thus, for the estimated parameter. Two experimental procedures were identified: i) single step of relative humidity from 10% to 75% and ii) multiple steps of relative humidity 10-75-33-75% with an 8-day duration period for each step. For both experiment designs, it has been shown that the sensor has to be placed near the impermeable boundary. After the measurements, the parameter estimation problem is solved using an interior point algorithm to minimize the cost function. Several tests are performed for the definition of the cost function, by using the L^2 or L^\infty norm and considering the experiments separately or at the same time. It has been found out that the residual between the experimental data and the numerical model is minimized when considering the discrete Euclidean norm and both experiments separately. It means that two parameters are estimated using one experiment while the third parameter is determined with the other experiment. Two cost functions are defined and minimized for this approach. Moreover, the algorithm requires less than 100 computations of the direct model to obtain the solution. In addition, the OED sensitivity functions enable to capture an approximation of the probability distribution function of the estimated parameters. The determined sorption isotherm coefficients calibrate the numerical model to fit better the experimental data. However, some discrepancies still appear since the model does not take into account the hysteresis effects on the sorption capacity. Therefore, the model is improved proposing a second differential equation for the sorption capacity to take into account the hysteresis between the main adsorption and desorption curves. The OED approach is also illustrated for the estimation of five of the coefficients involved in the hysteresis model. To conclude, the prediction of the model with hysteresis are compared with the experimental observations to illustrate the improvement of the prediction.	physics.app-ph	physics	Julien Berger Polytech Annecy -- Chambéry, LOCIE, France Thomas Busser Polytech Annecy -- Chambéry, LOCIE, France Denys Dutykh CNRS -- LAMA, Université Savoie Mont Blanc, France Nathan Mendes Pontifical Catholic University of Paraná, Brazil An efficient method to estimate sorption isotherm curve coefficients 8 1 0 2 n u J 7 2 ] h p - p p a . s c i s y h p [ 3 v 5 6 5 6 0 . 4 0 7 1 : v i X r a arXiv.org / hal Last modified: February 18, 2019 An efficient method to estimate sorption isotherm curve coefficients Julien Berger∗, Thomas Busser, Denys Dutykh, and Nathan Mendes Key words and phrases. Optimal Experiment Design (OED); parameter estimation problem; convec- tive moisture transfer; sensitivity functions; sorption moisture coefficients; hysteresis. ∗ Corresponding author. Estimation of sorption coefficients using the OED 3 / 50 Abstract. This paper deals with an inverse problem applied to the field of building physics to experimentally estimate three sorption isotherm coefficients of a wood fiber material. First, the mathematical model, based on convective transport of moisture, the Optimal Experiment Design (OED) and the experimental set-up are presented. Then measurements of relative humidity within the material are carried out, after searching the OED, which is based on the computation of the sensitivity functions and a priori values of the unknown parameters employed in the mathematical model. The OED enables to plan the experimental conditions in terms of sensor positioning and boundary conditions out of 20 possible designs, ensuring the best accuracy for the identification method and, thus, for the estimated parameter. Two experimental procedures were identified: i) single step of relative humidity from 10 % to 75 % and ii) multiple steps of relative humidity 10 − 75 − 33 − 75 % with an 8-day duration period for each step. For both experiment designs, it has been shown that the sensor has to be placed near the impermeable bound- ary. After the measurements, the parameter estimation problem is solved using an interior point algorithm to minimize the cost function. Several tests are performed for the defini- tion of the cost function, by using the L 2 or L ∞ norm and considering the experiments separately or at the same time. It has been found out that the residual between the experimental data and the numerical model is minimized when considering the discrete Euclidean norm and both experiments separately. It means that two parameters are es- timated using one experiment while the third parameter is determined with the other experiment. Two cost functions are defined and minimized for this approach. Moreover, the algorithm requires less than 100 computations of the direct model to obtain the solu- tion. In addition, the OED sensitivity functions enable to capture an approximation of the probability distribution function of the estimated parameters. The determined sorption isotherm coefficients calibrate the numerical model to fit better the experimental data. However, some discrepancies still appear since the model does not take into account the hysteresis effects on the sorption capacity. Therefore, the model is improved proposing a second differential equation for the sorption capacity to take into account the hysteresis between the main adsorption and desorption curves. The OED approach is also illus- trated for the estimation of five of the coefficients involved in the hysteresis model. To conclude, the prediction of the model with hysteresis are compared with the experimental observations to illustrate the improvement of the prediction. Key words and phrases: Optimal Experiment Design (OED); parameter estimation problem; convective moisture transfer; sensitivity functions; sorption moisture coefficients; hysteresis MSC: [2010] 35R30 (primary), 35K05, 80A20, 65M32 (secondary) PACS: [2010] 44.05.+e (primary), 44.10.+i, 02.60.Cb, 02.70.Bf (secondary) J. Berger, T. Busser, D. Dutykh & N. Mendes 4 / 50 Contents 1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.1 Moisture transport in constructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1.2 Inverse problems in building physics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 1.3 Problem statement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2 Methodology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.1 Physical problem . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Moisture transport . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Material properties . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Boundary conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.2 Dimensionless formulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2.3 The Optimal Experiment Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 3 4 Experimental facility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Searching the OED . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 4.1 Estimation of one parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Single step . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Multiple steps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4.2 Estimation of several parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Single step . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Multiple steps . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 5 Estimation of the unknown parameters . . . . . . . . . . . . . . . . . . . . . 21 5.1 Methodology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 5.2 Results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 6 Accounting for hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 6.1 Model for hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 6.2 Searching the OED . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 6.3 Comparing the numerical results with the experimental observations . . . . . . . . . . . . . 33 7 Final remarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 7.1 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37 7.2 Outlooks and open-problems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 Acknowledgments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38 A Equations for the computation of the sensitivity coefficients . . . . . . . . 40 A.1 Model without hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 A.2 Model with hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 B Proving the structural identifiability of the parameters . . . . . . . . . . . . 43 B.1 Model without hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 B.2 Model with hysteresis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 C Numerical validation of the regularized hysteresis model . . . . . . . . . . . 44 D Implicit-Explicit numerical scheme for the hysteresis model . . . . . . . . . 45 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 J. Berger, T. Busser, D. Dutykh & N. Mendes 6 / 50 1. Introduction Moisture in buildings has been a subject of major concern since the eighties. It may affect energy consumption and demand so we can mention at least four International Energy Agency projects conducted in the last 30 years to promote global research on this subject (Annexes 14 , 24 , 41 and 55) [1]. Furthermore, moisture can also have a dramatic impact on occupants' health and on material deterioration. Several tools have been developed to simulate the moisture transport in constructions as described in [55], which can be used to predict conduction loads associated to porous elements and mold growth risk in building enclosures. Nevertheless, those tools require input parameters containing temperature- and moisture-dependent hygrothermal properties. 1.1. Moisture transport in constructions The following system of differential equations established by Luikov [36] represents the physical phenomenon of heat and mass transfer through capillary porous materials: (1.1a) (1.1b) ∂U ∂t ∂T ∂t c b ρ 0 = ∇ ·(cid:0) a m ∇U + δ a m∇T (cid:1) , = ∇ ·(cid:0) λ∇T (cid:1) + r 12 ∇ ·(cid:18) a m1 ρ 0(cid:0) ∇U + δ 1∇T (cid:1)(cid:19) , where U is the relative concentration of moisture in the porous body, T the temperature, a m the mass transfer coefficient for vapor (denoted with the subscript 1) and liquid inside the body, δ the thermal-gradient coefficient, ρ 0 the specific mass of the dry body, c b the specific heat of the body and, r 12 the latent heat of vaporization. In building physics, those equations represent the physics that occurs in the building porous envelope and indoor porous elements such as furniture, textiles, etc.. Regarding the envelope, the phenomenon is investigated to analyze the influence of moisture transfer on the total heat flux passing through the wall, with the objective of estimating the heat losses. They are also studied to analyze the durability of walls and to avoid disorders due to the presence of moisture as, for instance, mold growth, shrinking or interstitial condensation. This aspect is of major importance for wall configurations involving several materials with different properties, where moisture can be accumulated at the interface between two materials. Durability problems may also appear when considering important moisture sources as wind driven rain or rising damp problems. These analyses are performed by computing solutions to the partial differential equations. For this, numerical methods are used due to the nonlinearity of the material properties, depending on moisture content and temperature, and the non-stationary boundary conditions, defined as Robin-type and varying according to climatic data. Most of the numerical approaches consider standard discretization techniques. For the time discretisation, the Euler implicit [24, 39, 40] or explicit [32] schemes are adopted. Regarding the spatial discretisation, works in [37] Estimation of sorption coefficients using the OED 7 / 50 are based on finite-differences methods, in [5, 24, 38, 39] on finite-volume methods and in [28, 47] on finite-element methods. It is important to note that the solution of the equations requires the calculation of large systems of nonlinear equations (an order of 10 6 for 3-D problems). Furthermore, the problem deals with different time scales. The diffusive phenomena and the boundary conditions evolve on the time scale of seconds or minutes while the building performance usual analysis is done for a time interval of one year or even longer when dealing with durability or mold growth issues. Thus, the computation of heat and moisture transfer in porous material in building physics has a non-negligible computational cost. Recently, innovative and efficient methods of numerical simulation have been proposed. Some improved explicit schemes, enabling to overcome the stability restrictions of standard Euler explicit schemes, have been proposed in [25, 26]. An accurate and fast numerical scheme based on the Scharfetter -- Gummel idea has been proposed in [10] to solve the advection-diffusion moisture differential equation. Some attempts based on model reduction methods have been also proposed with an overview in [37]. 1.2. Inverse problems in building physics While some research focuses on numerical methods to compute the solution of the so- called direct problem to analyze the physical phenomena, some studies aim at solving inverse problems of heat and mass transfer in porous materials. In this case, the focus is m , δ ◦(cid:1) using experimental data denoted , 0 , c ◦ , a ◦ the estimation of material properties (cid:0) γ ◦ as (cid:0) T exp , U exp(cid:1) by minimizing a thoroughly chosen cost function J : m , δ ◦(cid:1) = arg min J , (cid:0) γ ◦ (cid:12)(cid:12)(cid:12)(cid:12) T exp − T , U exp − U(cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) with J = (cid:12)(cid:12)(cid:12)(cid:12) is certain vector-norm in time. 0 , c ◦ , a ◦ (cid:12)(cid:12)(cid:12)(cid:12) where (cid:12)(cid:12)(cid:12)(cid:12) . . .(cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) Here, the inverse problem is an inverse medium problem, as it aims at estimating the coefficient of the main equation [29, 30].Two contexts can be distinguished. First, when dealing with existing buildings to be retrofitted, samples cannot be extracted from the walls to determine their material properties. Therefore, some in-situ measurements are carried out according to a non-destructive design. The experimental data can be gathered by temperature, relative humidity, flux sensors and infrared thermography, among others. In most of the case, measurements are made at the boundary of the domain. From the obtained data, parameter estimation enables to determine the material thermo-physical properties. As mentioned before, the properties are moisture and temperature dependent. Therefore, the parameter identification problem needs to estimate functions that can be parameterized. Moreover, in such investigations, there is generally a few a priori informa- tion on the material properties. In [12], the thermal conductivity of an old historic building wall composed of different materials is presented. In [48], the thermo-physical properties J. Berger, T. Busser, D. Dutykh & N. Mendes 8 / 50 of materials composing a wall are estimated. In [42], the heat capacity and the thermal conductivity of a heterogeneous wall are determined. Once this parameter estimated, effi- cient simulations using the direct model can be performed to predict the wall conduction loads and at the end choose adequate retrofitting options. Another issue arises when comparing the numerical model results and experimental data. Some discrepancies were observed as reported in several studies [10, 27] and illustrated in Figure 1. A material, with an initial moisture content U 0 , is submitted to an adsorption and desorption cycles. The moisture content raises up to U max at the end of the adsorp- tion phase. Then, during the desorption phase, the moisture content decreases until a value U 1 > U 0 due to the hysteresis effects. When comparing the simulation results to the experimental data, it is observed that predictions of moisture content commonly underestimate the experimental observations of moisture adsorption processes. In other words, the numerical predictions are lower than the experimental values obtained during the adsorption phase. On the other hand, in the course of the desorption phase, the nu- merical predictions often overestimate the experimental observations, i.e. the simulation values are greater than the experimental ones. At the end of the desorption process, the experimental values are greater again, when compared to both the prediced values and the initial moisture content since thehysteresis phenomenon significantly affects the material moisture sorption capacity. It means the experimental moisture front rushes faster than the numerical predictions. To answer this issue, models can be calibrated using in-situ measurements for adapting the material properties to reduce the discrepancies between model predictions and real observations. In [33], moisture- and temperature-dependent diffusivity and thermophysical properties are estimated using only temperature measure- ments under a drying process. In [8], the moisture permeability and advective coefficients are estimated using relative humidity measurements in a wood fiber material. In these cases, a priori information on the material properties is known thanks to complementary measurements based on well-established standards. In terms of methodology for the estimation of parameters, several approaches can be distinguished in literature. Descent algorithms, based on the Levenberg -- Marquardt nonlinear least-square method, are used in [42]. Stochastic approaches, using Bayesian inferences and the Markov chain Monte-Carlo algorithms, are applied in [12, 13, 20, 46]. Approaches based on genetic algorithms based approaches are adopted to minimize the cost function in [16, 56]. Model reduction techniques, based on Proper Orthogonal Decomposition (POD), are employed in [17]. 1.3. Problem statement This article presents an efficient ethod for the estimation of moisture sorption isotherm coefficients of a wood fiber material, represented by three parameters, using an experi- mental facility, aiming at reducing the discrepancies between model predictions and real performance. The estimation of the unknown parameters, based on observed data and identification methods, strongly depends on the experimental protocol. In particular, the Estimation of sorption coefficients using the OED 9 / 50 adsorption phase desorption phase experiments simulation Figure 1. Illustration of the discrepancies observed when comparing experimental data to results from numerical models of moisture transfer in porous material. boundary conditions imposed to the material and the location of sensors play a major role. In [9], the concept of searching the Optimal Experiment Design (OED) was used to determine the best experimental conditions in terms of imposed flux, quantity and loca- tion of sensors, aiming at estimating the thermophysical and hygrothermal properties of a material. The OED provides the best accuracy of the identification method and, thus, the estimated parameters. Therefore, the main issue in this paper is to use the method to determine the OED considering the experimental set-up before starting the data acquisition process. First, the optimal boundary conditions and location of sensors are defined. Then, the experimental campaign is carried out, respecting the OED. From the experimental data, the parameters are estimated using an interior-point algorithm with constraints on the unknowns. To improve the fidelity of the physical phenomenon, the OED approach is extended to a model that takes into account the hysteresis effects on the sorption curves. Lastly, a comparison between the numerical predictions and the experimental observations reveals smaller discrepancies and a satisfactory representation of the physical phenomena. This article is organized as follows. Section 2 presents the physical problem with its mathematical formulation and the OED methodology. In Section 3, the existing experi- mental set-up is described. The OED search providing the different possibilities for the J. Berger, T. Busser, D. Dutykh & N. Mendes 10 / 50 estimation of one or several parameters with the experimental set-up is presented in Sec- tion 4. The parameters are estimated in Section 5 and then the main conclusions are finally outlined. 2. Methodology 2.1. Physical problem In this section, the physical problem of moisture transport in porous material is described. The system of Eq. (1.1) proposed by Luikov has been established for non-isothermal con- ditions. In our study, the temperature variations in the material are assumed negligible. Therefore, in section 2.1.1, the derivation of the unidimensional advective -- diffusive mois- ture transport equation is detailed. Then, the assumption on the material properties are defined. In the last section 2.1.3, the boundary conditions of the problem are specified. 2.1.1 Moisture transport The term moisture includes the water vapor, denoted by index 1 and the liquid water, denoted by index 2 , both migrating through the porous matrix of the material. The differential equation describing the mass conservation for each species can be formulated as [36]: ∂w i ∂t = − ∇ · j i + I i , i ∈ (cid:8) 1 , 2(cid:9) , (2.1) (2.2) where w i is the volumetric concentration of species i , j i , the total flux of the species i and, I i , the volumetric source. It is assumed that solid water is not present in the porous structure and I 1 + I 2 = 0 . Thus, by summing Eq. (2.1) for i ∈ (cid:8) 1 , 2(cid:9) , we obtain: ∂ The total volumetric concentration of moisture is denoted by ∂t(cid:0) w 1 + w 2(cid:1) = − ∇ ·(cid:0) j 1 + j 2(cid:1) w def := w 1 + w 2 . It can be noted that we have the following relation w = ρ 0 U between the potentials w and U from Eq. (1.1a) derived by Luikov. Since the temperature variations in the material are assumed negligible, we can write: ∂φ ∂P v where φ is the relative humidity. By its definition P v P s ∂w ∂φ ∂w ∂t = φ = , · · ∂P v ∂t , Estimation of sorption coefficients using the OED 11 / 50 thus, we have: ∂ φ ∂ P v = 1 P s , with P s the saturation pressure. Considering the moisture sorption curve describing the material property between the moisture content w and the relative humidity φ , denoted as w = f ( φ ), it can be written: ∂φ We define the moisture storage coefficient as ∂w ∂t = ∂ f (φ) 1 P s ∂P v ∂t . def := c ∂ f (φ) ∂φ 1 P s . (2.3) (2.4) Moreover, the moisture transfer occurs due to capillary migration, moisture diffusion and advection of the vapor phase. Here, advective transfer represents the movement of species under the presence of airflow through the porous matrix. The convection process designates both diffusion and advection transfer. Thus, the fluxes can be expressed as [7, 10, 18]: j 1 + j 2 = − d ∇ P v + a P v , (2.5) where P v is the vapor pressure, d is the global moisture transport coefficient and a the global advection coefficient defined as: def := a v R v T , where T is the fixed temperature, v the constant mass average velocity and, R v the water vapor gas constant. Therefore, using Eq. (2.2) and the results from Eqs. (2.3) and (2.5), the physical problem of unidimensional advective -- diffusive moisture transport through a porous material can be mathematically described as: c ∂P v ∂t = ∂ ∂x" d ∂P v ∂x # − a ∂P v ∂x . (2.6) 2.1.2 Material properties The moisture capacity c is assumed to be a second-degree polynomial of the relative humidity, while the moisture permeability d is considered as a first-degree polynomial of the relative humidity: c = c 0 + c 1 φ + c 2 φ 2 , d = d 0 + d 1 φ . (2.7a) (2.7b) These assumptions correspond to a third-order polynomial function of the relative hu- midity for the moisture sorption curve. It should be noted that other functions can be used J. Berger, T. Busser, D. Dutykh & N. Mendes 12 / 50 to describe the moisture sorption curve c and/or the moisture permeability d . However, for the material under investigation, these properties have been determined using the tradi- tional cup method and the gravimetric approach, presented in preliminary studies [45, 52] and expressed using these functions. These properties will be used as a priori ones in the algorithm when searching the OED in Section 4. It is important to stress out that the hysteresis of the sorption curve is not considered in the physical model. 2.1.3 Boundary conditions At x = 0 , the surface is in contact with the ambient air at temperature T ∞ and relative humidity φ ∞ . Thus, the boundary condition is expressed as: d ∂P v ∂x − a P v = h(cid:18) P v − P s(cid:0) T ∞(cid:1) · φ ∞ ( t )(cid:19) , (2.8) where h is the convective vapor transfer coefficient, considered as constant. At x = L , the surface is impermeable. Thus, the total moisture flow vanishes at this boundary where the velocity v and the diffusion flow d ∂P v ∂x are null: d ∂P v ∂x − a P v = 0 . At t = 0, the vapor pressure is supposed to be uniform within the material P v = P i v . (2.9) (2.10) It is of great concern in the construction of the numerical model that the boundary condi- tions satisfies the initial condition. 2.2. Dimensionless formulation For building porous materials such as concrete, insulation and brick, the coefficients scales as 10 2 kg/(m 3.Pa) for the sorption curve c and 10 −11 s for the moisture perme- ability d and the advection coefficients a . Therefore, while performing a mathematical and numerical analysis of a given practical problem, it is of capital importance to obtain a unitless formulation of governing equations. For this, the vapor pressure is transformed to a dimensionless quantity: u = P v P ref v , u i = P i v P ref v , u ∞ = The time and space domains are also modified: P s(cid:0) T ∞(cid:1) φ ∞ P ref v . x ⋆ = x L , t ⋆ = t t ref , Estimation of sorption coefficients using the OED 13 / 50 where L is the thickness of the material and t ref a characteristic time. The material properties are changed considering a reference value for each parameter: c ⋆ = c c 0 , d ⋆ = d d 0 . In this way, dimensionless numbers are highlighted: Pé = a · L d 0 , Bi = h · L d 0 , Fo = t ref · d 0 L 2 · c 0 . The dimensionless moisture Biot number Bi quantifies the importance of the moisture transfer at the bounding surface of the material. The transient transfer mechanism is characterised by the Fourier number Fo whereas the Péclet number Pé measures only the importance of moisture advection. The quantities c ⋆ ( u ) and d ⋆ ( u ) give the variation of storage and permeability coefficients from the reference state of the material. The dimensionless governing equations are finally written as: c ⋆( u ) ∂u ∂t ⋆ = Fo ∂ ∂x ⋆ d ⋆( u ) ∂u ∂x ⋆ − Pé u! , t ⋆ > 0 , x ⋆ ∈ (cid:2) 0, 1(cid:3) , (2.11a) − a ⋆ u = Bi · ( u − u ∞ ) , t ⋆ > 0 , x ⋆ = 0 , (2.11b) d ⋆( u ) d ⋆( u ) ∂u ∂x ⋆ ∂u ∂x ⋆ − a ⋆ u = 0 , t ⋆ > 0 , x ⋆ = 1 , u = u i , where functions c ⋆( u ) and d ⋆( u ) are given by: t ⋆ = 0 , x ⋆ ∈ (cid:2) 0, 1(cid:3) . c ⋆( u ) = 1 + c ⋆ d ⋆( u ) = 1 + d ⋆ 1 u + c ⋆ 1 u . 2 u 2 , (2.11c) (2.11d) In this study, the reference parameters correspond to the conditions at T = 23 ◦C and φ = 0.5 , which gives a vapor pressure of P ref v = 1404 Pa . Since the temperature is assumed as constant, a dimensionless value u = 2 corresponds to φ = 1 . The field varies within the interval u ∈ (cid:2) 0 , 2(cid:3) . The direct problem, defined by Eq. (2.11), is solved using a finite-difference standard discretisation method. An embedded adaptive in time Runge -- Kutta scheme combined with a Scharfetter -- Gummel spatial discretisation approach, is used [10]. It is adaptive and embedded to estimate local error in time with low extra cost. The algorithm was implemented in the MatlabTM environment. For the sake of notation compactness, the upper-script ⋆ standing for dimensionless parameters, is no longer used. 2.3. The Optimal Experiment Design Efficient computational algorithms for recovering parameters P given an observation u exp of the field u (x, t) have already been proposed. Readers may refer to [44] for a primary J. Berger, T. Busser, D. Dutykh & N. Mendes 14 / 50 ∀ m ∈ (cid:8)1, . . . , M(cid:9) , overview of different methods. They are based on the minimization of the cost function J [ P ] . For this purpose, it is required to equate to zero the derivatives of J [ P ] , with respect to each of the unknown parameters p m to find critical points. Associated to this necessary condition for the minimization of J [ P ], the scaled dimensionless local sensitivity function [23, 54] is introduced: σ p σ u Θ m (x, t) = ∂u ∂p m (2.12) , where σ u is the variance of the error measuring u exp . The parameter scaling factor σ p equals to 1 as we consider that prior information on parameter p m has low accuracy. It is important to note that all algorithms have been developed considering the dimensionless problem in order to compare only the order of variation of parameters and observation, avoiding the effects of units and scales. The function Θ m measures the sensitivity of the estimated field u with respect to changes in the parameter p m [4, 43, 44]. A small magnitude of Θ m indicates that large changes in p m induce small changes in u . The estimation of parameter p m is therefore difficult, in this case. When the sensitivity coefficient Θ m is small, the inverse problem is necessarily ill- conditioned. If the sensitivity coefficients are linearly dependent, the inverse problem is also ill-posed. Therefore, to get an optimal evaluation of parameters P , it is desirable to have linearly-independent sensitivity functions Θ m with large magnitudes for all parameters p m . These requirements ensure the best conditioning of the computational algorithm to solve the inverse problem and thus the better accuracy of the estimated parameter. It is possible to define the experimental design in order to meet these requirements. The issue is to find the optimal sensor location X ◦ and the optimal amplitude φ ∞, ◦ of the relative humidity of the ambient air at the material bounding surface, x = 0 . To search this optimal experiment design, we introduce the following measurement plan: π def := (cid:8) X , φ ∞(cid:9) . In the analysis of optimal experiments for estimating the unknown parameter(s) P , a quality index describing the recovering accuracy is the D−optimum criterion [2, 3, 6, 21, 22, 51]: where F ( π ) is the normalized Fisher information matrix [34, 50] defined as: Ψ = det(cid:2) F ( π )(cid:3) , (2.13) (2.14) (2.15a) (2.15b) F ( π ) = (cid:2) Φ i j(cid:3) , τ Xn = 1 Φ i j = N 0 Θ i (x n , t) Θ j (x n , t) dt . ∀(i, j) ∈ (cid:8)1, . . . , M(cid:9) 2 , The matrix F ( π ) characterizes the total sensitivity of the system as a function of the measurement plan π (Eq. (2.13)). The OED search aims at finding a measurement plan π ⋆ for which the objective function (Eq. (2.14)) reaches the maximum value: π ◦ = (cid:8) X ◦ , φ ∞, ◦(cid:9) = arg max π Ψ . (2.16) Estimation of sorption coefficients using the OED 15 / 50 To solve Eq. (2.16), a domain of variation Ω π is considered for the sensor position X and the amplitude φ ∞ of the boundary conditions. Then, the following steps are carried out for each value of the measurement plan π = (cid:8) X , φ ∞(cid:9) in the domain Ω π . First, the direct problem, defined by Eqs. (2.6) -- (2.10), is solved. Then, given the solution P v for a fixed value of the measurement plan, the next step consists of computing the ∂u ∂p m sensitivity coefficients Θ m = , using also an embedded adaptive time Runge -- Kutta scheme combined with central spatial discretisation. Then, with the sensitivity coefficients, the Fisher matrix (2.15)(a,b) and the D−optimum criterion (2.14) are computed. The solution of the direct and sensitivity problems are obtained for a given a priori parameter P and, in this case, the validity of the OED depends on this knowledge. If there is no prior information, the methodology of the OED can be done using an outer loop on the parameter P sampled using, for instance, Latin hypercube or Halton or Sobol quasi- random samplings. Interested readers may refer to [9] for further details on the computation of sensitivity coefficients. An interesting remark with this approach is that the probability distribution of the unknown parameter p m can be estimated from the distribution of the measurements of the field u and from the sensitivity Θ m . The probability P of u is given by: F ( ¯u ) = P(cid:26) u( x , t , p m ) 6 ¯u(cid:27) . Using the sensitivity function Θ m, the probability can be approximated by: F ( ¯u ) ≃ P(cid:26) u( x , t , p ◦ m ) + Θ m ·(cid:0) p m − p ◦ Assuming Θ m > 0 , we get: F ( ¯u ) = P(cid:26) p m 6 p ◦ m + ¯u − u( x , t , p ◦ Θ m m(cid:1) 6 ¯u(cid:27) , (cid:27) . m ) Therefore, using a change of variable, the cumulative derivative function of the probability of the unknown parameter p m is estimated by: When Θ m < 0 , the cumulative derivative function of the probability is given by: F ( ¯p m ) = P(cid:26) p m 6 ¯p m(cid:27) m(cid:1)(cid:19) . = F (cid:18) u + Θ m ·(cid:0) ¯p m − p ◦ m(cid:1)(cid:19) . F ( ¯p m ) = 1 − F (cid:18) u + Θ m ·(cid:0) ¯p m − p ◦ It gives a local approximation of the probability distribution of the unknown parameter p m , at a reduced computational cost. Moreover, the approximation is reversible. Thus, if one has the distribution of the unknown parameter, it is possible to get the one of field u . J. Berger, T. Busser, D. Dutykh & N. Mendes 16 / 50 3. Experimental facility The test facility used to carry out the experiment is illustrated in Figure 2. It is com- posed of two connected climatic chambers. The temperature of each chamber is controlled independently with a thermostatically-controlled water bath allowing water to recirculate in a heat exchanger. The relative humidity is kept fixed using saturated salt solutions of MgCl 2 and NaCl. Relative humidity values in chambers 1 and 2 are fixed to φ 1 = 33 % and φ 2 = 75 % , respectively. Two door locks, at each side, allow the operator to insert or remove samples to minimize system disturbances. They enable easy and instantaneous change in humidity boundary conditions for the samples while passing from one chamber to another. Another climatic chamber is also available used to initially condition materials at φ 0 = 10 % . The temperature and relative humidity fields are measured within the samples with wireless sensors from the HygroPuce range (Waranet industry). The accuracy is ± 2 % for the relative humidity and ± 0.5 ◦C for the temperature and the dimensions are 0.6 cm thickness and 1.6 cm diameter, as illustrated in Figure 3(a). The sensors are placed within the material by cutting the samples. The total uncertainty on the measurement of relative humidity can be evaluated considering the propagation of the uncertainty due to sensor measurement and due to their location. In [8] the total uncertainty on the measurement has been evaluated to ∆φ = 2 % . The material investigated is the wood fibre, which properties have been determined in [8, 45] and are shown in its dimensionless form in Table 1. The reference parameter used to compute the unitless parameters are t ref = 3600 s , d 0 = 5.17 s , c 0 = 2.85 kg/(m 3.Pa) and L = 0.08 m . It constitutes a priori information on the unknown parameters Fo , c 1 and c 2 . The samples are cylindrical, with a 10 cm diameter and 8 cm thickness in order to avoid border effects and to minimize perturbations by sensors placed within the sample. Moreover, to ensure unidimensional moisture transfer and a null flux condition at x = 1, the samples are covered with aluminium tape and glued on a white acrylic seal, as illustrated in Figure 3(b). The convective moisture transport coefficient at x = 0 has been estimated experimentally in [8, 14]. The corresponding Biot number is reported in Table 1. Finally, the experimental facility is used to submit the samples to a single or multiple steps of relative humidity. For a single step, the boundary conditions are defined as: u ∞ ( t ) =   u i , u c , t = 0 , t > 0 . Estimation of sorption coefficients using the OED 17 / 50 Figure 2. Illustration of the RH-box experimental facility. (a) (b) Figure 3. Sensors of relative humidity and temperature (a) and wood fibre samples (b) with white acrylic seal and with aluminium tape. For the case of multiple steps, we set: t = 0 u i , u 1 c , u 2 c , u 3 c , u ∞ ( t ) =   where the initial condition belongs to u i ∈ (cid:8) 0.2 , 0.6 , 1.5(cid:9) , the climatic chamber boundary condition (cid:0) u c , u 1 c(cid:1) ∈ (cid:8) 0.6 , 1.5(cid:9) and the duration of the step τ ∈ (cid:8) 24 , 48 , 72 , 96 , 120 , 144 , 168 , 192(cid:9). A total of 20 designs are possible for providing measurements to estimate the unknown parameters Fo , c 1 and c 2 . A synthesis of the possible designs is provided in Table 2. It should be noted that, according to the reference parameters, unitless values u = 0.2 , u = 0.66 , u = 1.5 correspond to φ = 0.1 , φ = 0.33 and φ = 0.75 , respectively. t ∈ (cid:0) 0 , τ(cid:3) , t ∈ (cid:0) τ , 2 τ(cid:3) , t ∈ (cid:0) 2 τ , 3 τ(cid:3) , c , u 2 c , u 3 J. Berger, T. Busser, D. Dutykh & N. Mendes 18 / 50 Table 1. A priori dimensionless material properties of wood fiber from [8, 45]. Storage coefficient c c( u ) = c 0 + c 1 u + c 2 u 2 c 0 = 1 , c 1 = −9.79 · 10 −1 , c 2 = 1.06 Diffusion coefficient d Péclet number Fourier number Biot number d( u ) = d 0 + d 1 u d 0 = 1 , d 1 = 0.29 Pé = 1.1 · 10 −2 Fo = 4 · 10 −3 Bi = 13.7 Table 2. Possible designs according to the experimental facility. Single step Multiple step Case 1 Case 2 u i 0.2 0.2 0.66 Design 1 2 3 4 1.5 1.5 1.5 0.66 u c Design τ Design τ Design τ Design 0.66 17 13 5 1 1 9 5 6 7 8 2 3 4 10 11 12 6 7 8 14 15 16 2 3 4 18 19 20 τ 5 6 7 8 Case 1: u i = 0.2 , u 1 Case 2: u i = 0.2 , u 1 c = 0.66 , u 2 c = 1.5 , u 2 c = 1.5 , u 3 c = 0.66 , u 3 c = 0.66 c = 1.5 4. Searching the OED 4.1. Estimation of one parameter This Section focuses on the estimation of one parameter within Fo , c 1 or c 2 with experi- ments coming from single- or multiple-step designs. It should be noted that by estimating parameter Fo , the complete sorption isotherm curve is defined, according to the dimension- less quantities defined in Section 2.2. The equations to compute the sensitivity functions are given in Appendix A. In addition, the demonstration of structural identifiability of the three parameters is provided in Appendix B. Estimation of sorption coefficients using the OED 19 / 50 1 0.8 0.6 0.4 0.2 0 1 2 3 4 1.2 1 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 (a) (b) Figure 4. Variation of the criterion Ψ for the four possible single step designs (a) and as a function of the sensor position X for the OED (b), in the case of estimating one parameter. 4.1.1 Single step Figure 4(a) gives the variation of the criterion Ψ for the four single-step designs. For the estimation of parameters Fo or c 1 , the criterion reaches its maximal value for design 2 , corresponding to a step from u i = 0.1 to u c = 1.5 . For parameter c 2 , the design 4 is the optimal one. It can be noted that, for parameter c 1, the relative criterion Ψ attains 80% for the design 4 . It could be an interesting alternative to estimate this parameter. The variation of the criterion is related to the sensitivity function of each parameter. As noticed in Figures 5(a) and 5(b), functions Θ have higher magnitudes of variation for the OED. The variation of Ψ as a function of the sensor location X is shown in Figure 4(b) for the OED. The optimal sensor location is at the boundary of the material opposite from the perturbations. If required for practical purpose, the sensor can be placed in the interval X ∈ (cid:2) 0.9 , 1(cid:3), ensuring to reach 95% of the criterion Ψ . Results have similar tendencies for the three parameters. 4.1.2 Multiple steps Figure 6(a) shows the variation of the relative criterion Ψ for the designs considering multiple steps of relative humidity. It increases with the duration τ of the steps. Thus, for the group of designs 5 to 12 and the group 13 to 20 , the criteria reach their maximum for designs 12 and 20 , respectively, corresponding to the step duration τ = 8 . The group 5 to 12 corresponds to a multiple step u 1 c = 0.66 . For them, the criterion does not attain 80% of the maximal criteria. Therefore, it is preferable to choose c = 0.66 , u 2 c = 1.5 , u 3 J. Berger, T. Busser, D. Dutykh & N. Mendes ) - ( Θ 1 0.5 0 -0.5 -1 -1.5 0 0.05 0 ) - ( Θ -0.05 -0.1 -0.15 -0.2 0 Fo, design 2 c 1, design 2 c 2, design 4 50 100 150 t (-) (a) 20 / 50 Fo c 1 c 2 50 100 150 t (-) (b) Figure 5. Sensitivity coefficients Θ for parameters Fo , c 1 and c 2 for the OED (a) and for design 1 (b) (X = X ◦). among designs 18 to 20 , with a multiple step u 1 c = 1.5 , and a duration τ > 6 to estimate the parameters. Figures 7(a), 7(b), 7(c) and 7(d) compare the sensitivity function of each parameter for three different designs. The quantity Θ has higher magnitude of variation for the OED than for the others. Moreover, for the design 5 , the duration of the step is so short that there is almost no variation on the sensitivity c = 0.66 , u 3 c = 1.5 , u 2 when occurring the first step for t ∈ (cid:2) 0 , 24(cid:3) . As for the previous case, the optimal sensor position is X ∈(cid:2) 0.9 , 1(cid:3) . 4.2. Estimation of several parameters The issue is now to estimate two or three parameters defining the moisture capacity Fo , c 1 and c 2. First of all, it is important to notice in Figures 5 and 7, that the sensitivity function Θ of the parameters have a strong correlation. The interval of variation of the correlation coefficients for all the designs are: Cor(cid:0) Fo , c 1(cid:1) ∈ (cid:2) 0.94 , 0.99(cid:3) , Cor(cid:0) c 1 , c 2(cid:1) ∈ (cid:2) 0.92 , 0.99(cid:3) , Cor(cid:0) Fo , c 2(cid:1) ∈ (cid:2) 0.71 , 0.95(cid:3) . Therefore, the estimation of the three parameters at the same time using only one exper- iment might be a difficult task. In addition, over all the possible designs, the couple of parameters(cid:0) Fo , c 2(cid:1) is the one with the lower correlation. Therefore, the OED search will only consider their estimation. Estimation of sorption coefficients using the OED 21 / 50 1 0.8 0.6 0.4 0.2 0 5 7 9 11 13 15 17 19 1 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 (a) (b) Figure 6. Variation of the criterion Ψ for the sixteen possible designs (a) and as a function of the sensor position X for the OED (b), in the case of estimating one parameter. 4.2.1 Single step Figure 8(a) gives the variation of the criterion Ψ for the four possible designs, considering a single step of relative humidity. The OED is reached for design 4 . However, the design 2 represents an interesting alternative as more than 95% of the maximum criterion is reached. The sensor should be placed between X ∈(cid:2) 0.9 , 1(cid:3) . 4.2.2 Multiple steps The variation of the criterion Ψ for the sixteen designs is shown in Figure 9. It increases with the duration of the steps τ . The OED is reached for the design considering a multiple step u i = 0.2 , u 1 c = 1.5 , with a duration τ = 8 . As for the previous case, the OED is defined for a sensor placed near the boundary of the material x = 1 . c = 0.66 and u 3 c = 1.5 , u 2 5. Estimation of the unknown parameters 5.1. Methodology As mentioned before, the sensitivity functions of parameters Fo , c 1 and c 2 are strongly correlated and the estimation of the three parameters using one single experiment might be a laborious task. To answer this issue, a single step, referenced as experiment A , will be J. Berger, T. Busser, D. Dutykh & N. Mendes 22 / 50 Fo c 1 c 2 ) - ( Θ 0.5 0 -0.5 -1 Fo c 1 c 2 0 100 200 300 t (-) (a) 400 500 0 100 200 300 t (-) 400 500 (b) ) - ( Θ 0.5 0 -0.5 -1 0.2 0 -0.2 ) - ( Θ -0.4 -0.6 -0.8 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 80 100 120 0 20 40 60 80 100 120 (d) Fo c 1 c 2 -1 0 20 40 60 t (-) (c) Figure 7. Sensitivity coefficients Θ for parameters Fo , c 1 and c 2 for the OED (design 20) (a), design 12 (b), design 5 (c) and design 13 (d) (X = X ◦). used for the estimation of the parameter c 1 and a multiple step, referenced as experiment B , for the parameters(cid:0) Fo , c 2(cid:1), which sensitivity functions are less correlated. According to the results of the OED, the sensor is placed near the border x = 1. For the boundary conditions, the single step will be operated from u i = 0.2 to u c = 1.5 (design 2 from Table 2). The OED multiple step is defined as u i = 0.2 , u 1 c = 0.66 , u 3 c = 1.5 and a duration of each step τ = 8 (design 20 from Table 2). To estimate the unknown parameters, the following cost function is defined by mini- mizing the residual between the experimental data and the numerical results of the direct c = 1.5 , u 2 Estimation of sorption coefficients using the OED 23 / 50 1 0.8 0.6 0.4 0.2 0 1 0.8 0.6 0.4 0.2 0 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 0.2 0.4 0.6 0.8 1 (a) (b) Figure 8. Variation of the criterion Ψ for the four possible designs of single step of relative humidity (a) and as a function of the sensor position X for the OED (b), in the case of estimating the couple of parameters (cid:0) Fo , c 2(cid:1). 1 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 5 7 9 11 13 15 17 19 (a) (b) Figure 9. Variation of the criterion Ψ for the sixteen possible designs of multiple steps of relative humidity (a) and as a function of the sensor position X for the OED (b), in the case of estimating the couple of parameters (cid:0) Fo , c 2(cid:1). model: J n i = (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) L i u − u exp , n (cid:12)(cid:12)(cid:12)(cid:12) , n ∈ (cid:8) 1 , 2 , 3(cid:9) , i ∈ (cid:8) 2 , ∞(cid:9) . J. Berger, T. Busser, D. Dutykh & N. Mendes 24 / 50 Several expressions of the cost function are tested. The subscript i denotes the norm used for the cost function J : i = 2 stands for the standard discrete L 2 norm while i = ∞ for the L ∞ (uniform) norm. The upper-script n = 1 implies that both experiments are considered separately. The single step is used for estimating parameter c 1 and the multiple step experiment for the parameters(cid:0) Fo , c 2(cid:1). In such case, there is a cost function according to each experiment: J 1 A i (cid:0) Fo , c 2(cid:1) = (cid:12)(cid:12)(cid:12)(cid:12) (cid:0) c 1(cid:1) = (cid:12)(cid:12)(cid:12)(cid:12) J 1 B i (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) L i u − u exp , A (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) L i u − u exp , B (cid:12)(cid:12)(cid:12)(cid:12) , , for the single step experiment, for the multiple step experiment . The estimation of the unknown parameters proceeds in an iterative approach as described in the Algorithm 1. In this case, a tolerance η = 10 −6 has been chosen. = (cid:0) Fo , c 1 , c 2(cid:1) apr = arg min J 1 A 3 1 (cid:0) Fo , c 1 , c 2(cid:1) k 2 while (cid:12)(cid:12)(cid:12)(cid:12)(cid:0) Fo , c 1 , c 2(cid:1) k (cid:0) Fo , c 2(cid:1) k (cid:0) c 1(cid:1) k k = k + 1 = arg min J 1 B 4 5 i 6 end − (cid:0) Fo , c 1 , c 2(cid:1) k−1(cid:12)(cid:12)(cid:12)(cid:12) > η do i experiments separately with an iterative process. Algorithm 1: Estimation of the unknown parameters (cid:0) Fo , c 1 , c 2(cid:1) considering both When n ∈ (cid:8) 2 , 3(cid:9), both experiments of single and multiple steps are considered at the same time, without any distinction. For n = 2 , parameters(cid:0) Fo , c 1 , c 2(cid:1) are estimated at all the material properties parameters(cid:0) Fo , c 1 , c 2 , d 1 , Pé(cid:1). Thus, in these cases, the cost once. An additional test, for n = 3 is carried by considering both experiments to estimate functions are defined as: J 2 J 2 (cid:12)(cid:12)(cid:12)(cid:12) 2 (cid:0) Fo , c 1 , c 2(cid:1) = (cid:12)(cid:12)(cid:12)(cid:12) ∞ , max (cid:0) Fo , c 1 , c 2(cid:1) = max((cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) ∞ , + (cid:0) Fo , c 1 , c 2(cid:1) = (cid:12)(cid:12)(cid:12)(cid:12) u − u exp , A (cid:12)(cid:12)(cid:12)(cid:12) u − u exp , A (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) L 2 (cid:12)(cid:12)(cid:12)(cid:12) L 2 (cid:12)(cid:12)(cid:12)(cid:12) u − u exp , B (cid:12)(cid:12)(cid:12)(cid:12) + (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) L ∞ u − u exp , A (cid:12)(cid:12)(cid:12)(cid:12) u − u exp , B (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) , (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) L ∞ (cid:12)(cid:12)(cid:12)(cid:12) L ∞ u − u exp , B (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) + (cid:12)(cid:12)(cid:12)(cid:12) J 2 , (cid:12)(cid:12)(cid:12)(cid:12) L ∞) , , Estimation of sorption coefficients using the OED 25 / 50 for n = 2 , and for n = 3 : , (cid:12)(cid:12)(cid:12)(cid:12) L ∞) , . J 3 2 (cid:0) Fo , c 1 , c 2 , d 1 , Pé(cid:1) = (cid:12)(cid:12)(cid:12)(cid:12) ∞ , max (cid:0) Fo , c 1 , c 2 , d 1 , Pé(cid:1) = max((cid:12)(cid:12)(cid:12)(cid:12) ∞ , + (cid:0) Fo , c 1 , c 2 , d 1 , Pé(cid:1) = (cid:12)(cid:12)(cid:12)(cid:12) + (cid:12)(cid:12)(cid:12)(cid:12) u − u exp , B (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) L 2 u − u exp , A (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) L 2 u − u exp , B (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) L ∞ (cid:12)(cid:12)(cid:12)(cid:12) u − u exp , A (cid:12)(cid:12)(cid:12)(cid:12) , (cid:12)(cid:12)(cid:12)(cid:12) u − u exp , A (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) L ∞ + (cid:12)(cid:12)(cid:12)(cid:12) u − u exp , B (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) L ∞ (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) (cid:12)(cid:12)(cid:12)(cid:12) J 3 J 3 Table 3 synthesizes all tests performed according to the definition of the cost function J. The cost function J is minimized using function fmincon in the MatlabTM environment, providing an efficient interior-point algorithm with constraint on the unknown parameters [15]. Here, the box-type constraints are defined with upper and lower bound for the parameters: where the upper-scripts ◦ and apr denote the estimated and a priori values of the pa- rameters, respectively. The bounds have been defined by performing previous tests and analyzing the parameter impact on the calibration. p ◦ ∈ (cid:2) 0.8 , 1.5(cid:3)·p apr , In order to quantify the quality of measured data, we estimate the noise inherent to any real physical measurement. By assuming that the noise ξ (ω) is centered Gaussian (i.e. ξ (ω) ∼ N (0, σ 2)), linear and additive, its variance σ 2 can be thus estimated. Moreover, we assume that the underlying signal is smooth. In order to extract the noise component, the signal is approximated locally by a low-order polynomial representing the trend. Then, the trend is removed by using a special filter, leaving us with the pure noise content, which can be further analyzed using the standard statistical techniques. For the considered data, the variance equals: σ ≃ 0.01 , σ ≃ 0.008 , for the single-step experiments , for the multiple-step experiments . The noise variance does not necessarily correspond to the measurement accuracy. This measure provides a lower bound of this error, i.e. the accuracy cannot be lower than the noise present in the measurement. 5.2. Results Figure 10(a) shows the variation of the residual between the measured data and the numerical results for different tests performed. The residual is minimized for tests 1, 4 and 7, corresponding to the involving considering the Euclidean norm for the compu- tation of the cost functions. The tendencies are similar for both experiments. It can be noted that the residual is lower when estimating only three parameters (cid:0) Fo , c 1 , c 2(cid:1) and J. Berger, T. Busser, D. Dutykh & N. Mendes 26 / 50 Table 3. Synthesis of the tests carried out with the expression of the cost function. Definition of the cost function J Tests 1 2 3 4 5 6 7 8 9 Experiments considered separately x x x Experiments at the same time (3 parameters to estimate) x x x Experiments at the same time (5 parameters to estimate) x x x Euclidean norm Infinite norm Sum of the infinite norms x x x x x x x x x not all the parameters of the material properties. Figure 10(b) provides the number of computations of the direct problem. As expected, the tests 1 to 3, considering both ex- periments separately, require a few more computations of the direct problem, due to the iterative procedure. Globally, the algorithm requires less than 100 computations, which is extremely low compared to stochastic approaches. For instance in [12], 10 4 computations are necessary to estimate the thermal conductivity of two materials by solving an inverse heat transfer problem. The comparison of the measured data and numerical results is illustrated in Figure 11(a) for the one-step experiment. Figure 11(b) shows it for the multiple-step procedure, for the case 20 . Results of the numerical model are provided for the a priori and estimated three parameters. As mentioned in the Introduction, the numerical model with a priori parameters predicts values lower than those obtained from experiments during the mois- ture adsorption and greater than them along the desorption processes. With the calibrated model, i.e. with the estimated parameters, there is a better agreement between the nu- merical results and the experimental data. Figures 11(c) and 11(d) show the residual. It is uncorrelated, highlighting a satisfactory estimation of the parameters. Nevertheless, it can be noted that some discrepancies remain between the experimental data and the numerical results. This can be specifically observed at t = 200 , in Figures 11(b) and 11(d), for which some explanations are possible. First, the mathematical model may fail in representing the physical phenomenon. Some assumptions such as isothermal conditions, unidimensional transport and constant velocity might contribute to the differences observed between experimental and numerical results. Although the experiment has been conceived to be isothermal, slight variations in the temperature field occurs due to mechanisms of phase change that may affect the profile of vapor pressure, which is highly temperature dependent. An important assumption, very often considered in literature, is the disregard of the hysteresis phenomenon, which may considerably affect the results. This issue can be noted in Figure 11(b) for t ∈ (cid:2) 0 , 300(cid:3). A good agreement is noted during the adsorption process t ∈ (cid:2) 0 , 200(cid:3) , since the coefficients have been estimated for a similar experiment. Estimation of sorption coefficients using the OED 27 / 50 However, during the desorption process, the field u is underestimated by the numerical predictions. On the other hand, despite the low relative humidity uncertainty, other un- certainties appear such as the interference of sensors on the moisture transfer through the sample, contact resistances and no perfect impermeabilization. Another possible explana- tion is associated to the parametrization of the material properties that can be improved. An interesting alternative could be to search for time varying parameters by adding a reg- ularization term in the cost function J. The convergence of the parameter estimation is shown in Figure 12(a). On the contrary to parameters Fo and c 1 , the a priori values of c 2 is not far from the estimated one. After one iteration, the algorithm almost estimates the parameters. The number of computations of the direct model for Test 1 is given in Figure 12(b). Only two global iterations are required to compute the solution of the inverse problem. More computations are required at the first iteration as the unknown parameters are more distant from the estimated optimal ones. The computation of the sensitivity functions of the parameters to be estimated enables to approximate their probability density functions. The error is assumed as a normal distribution N( 0 , σ 2 eff ) with its standard deviation σ eff computed by adding the ones due to uncertainty and to the noise: σ eff = σ noise + σ error . Thus, the probability distribution is computed for different times as illustrated in Figure 13. As reported in Figure 7(a), the sensitivity function of parameters Fo and c 1 is maximum and minimum at t = 207 and t = 4 , respectively. It explains why the probability function is maximum at t = 207 for these parameters. Similar results can be observed when comparing the sensitivity function of parameter c 2 in Figure 5(a) and the probability function in Figure 13(c). 6. Accounting for hysteresis As mentioned in the description of the physical model, the hysteresis effects are not con- sidered in the sorption capacity of the material. This assumption impacts the comparison between numerical and experimental observations, particularly for the cases of multiple steps of relative humidity (Figure 11(b)). In this section, the physical model is changed to revise this assumption, which is commonly considered. 6.1. Model for hysteresis The hysteresis impacts the sorption curve f ( φ ) and consequently on the moisture capac- ity coefficient c defined in Eq. (2.4). To account for hysteresis, several model are available in literature as proposed in [41] or in [19]. Recently, in [11], a new model of hysteresis has been proposed and validated using experimental data. This model is referred as a smoothed bang -- bang model in control literature. It enables intermediary sorption states J. Berger, T. Busser, D. Dutykh & N. Mendes 28 / 50 2 10 1 10 0 10 3 10 2 10 1 10 1 2 3 4 5 6 7 8 9 1 2 3 4 5 6 7 8 9 (a) (b) Figure 10. Residual between the measured data and numerical results for both experiments (a) and number of computations of the direct problem (b) for the different definition of the cost function J . between the main adsorption c ⋆ The coefficient c is computed using the following dimensionless differential equation: des curves illustrated in Figure 18(b). ads and desorption c ⋆ ∂c ⋆ ∂t ⋆ = β sign (cid:18) ∂u ∂t ⋆ (cid:19)(cid:18) c ⋆ − c ⋆ ads(cid:19) (cid:18) c ⋆ − c ⋆ des(cid:19) . (6.1) As for the previous case, these two properties are assumed to be second-degree polynomials of the relative humidity: c ⋆ ads = 1 + c ⋆ des = c ⋆ c ⋆ d ,0 + c ⋆ d ,1 u + c ⋆ d ,2 u 2 . a ,1 u + c ⋆ a ,2 u 2 , It should be noted that here, the dimensionless coefficient c ⋆ is defined as c ⋆ = c c ⋆ a ,0 . The coefficient β is a numerical parameter, controlling the transition velocity between the two curves. The function sign : R −→ (cid:8) −1 , 0 , 1(cid:9) is defined as: sign(cid:0) x(cid:1) =   1 , 0 , x > 0 , x = 0 , −1 , x < 0 . Estimation of sorption coefficients using the OED 29 / 50 1.5 1 0.5 ) - ( u u c u exp p ◦ p APR u c u exp p ◦ p APR 50 100 t (-) (a) 150 200 0 0 200 400 600 t (-) (b) 0.3 0.2 0.1 0 ) - ( p x e u − u -0.1 -0.2 0 200 400 600 t (-) (d) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 ) - ( u 0 0 0.1 ) - ( p x e u − u 0.05 0 -0.05 -0.1 -0.15 0 50 150 200 100 t (-) (c) Figure 11. Comparison of the numerical results with the experimental data (a-b) and their 98% confidence interval for the single-step (a) and the multiple-step (b) experiments (test 1). Comparison of the residual for the single-step (c) and multiple-step (d) experiments. The mathematical model of moisture transfer is now defined by a system of one partial differential equation coupled with an ordinary differential equation: ∂ ∂x ⋆ d ⋆( u ) c ⋆ ∂u ∂t ⋆ = Fo ∂c ⋆ ∂t ⋆ = β sign (cid:18) ∂u ∂u ∂x ⋆ − Pé u! , ∂t ⋆ (cid:19) ·(cid:18) c ⋆ − c ⋆ ads(cid:19) ·(cid:18) c ⋆ − c ⋆ des(cid:19) , (6.2a) (6.2b) associated with initial and boundary conditions. J. Berger, T. Busser, D. Dutykh & N. Mendes 30 / 50 1.05 1 0.95 0.9 0.85 0.8 0.75 0.7 0.65 0 45 40 35 30 25 20 15 10 5 0 1 2 1 2 (a) (b) Figure 12. Convergence of the parameter estimation, for the test 1 as a function of the number of iterations (a) and number of computations of the direct model (b). a, 2 , c ⋆ d, 0 , c ⋆ d, 1 , c ⋆ (cid:0) c ⋆ The issue is now to estimate the five coefficients of the adsorption and desorption curves a, 1 , c ⋆ It should be noted that the demonstration of structural identifiability of the five parameters is provided in Appendix B. When searching the OED, one need to compute the partial derivative of u according to each coefficient c ⋆ a, d, m. Since the model is now composed of two differential equations, for each coefficients, two sensitivity functions have to be computed. For instance, for the coefficient c ⋆ d, 0, it is required to compute: d, 2(cid:1) . Θ u = ∂u ∂c ⋆ d, 0 and Θ c = ∂c ∂c ⋆ d, 0 . From a mathematical point of view, the computation of Θ c is not possible since the function sign( x ) is not differentiable in the classical sense for x = 0 . It is differentiable in the sense of distributions. Therefore, a regularized version of the hysteresis model (6.1): ∂c ⋆ ∂t ⋆ = β Rsign (cid:18) ∂u ∂t ⋆ (cid:19) ·(cid:18) c ⋆ − c ⋆ ads(cid:19) ·(cid:18) c ⋆ − c ⋆ des(cid:19) , where the function Rsign : R → R is defined as: Rsign ( x ) = tanh(cid:0) δ x(cid:1) , with δ a sufficiently large real parameter. In this study, the following value is taken δ = 10 8 . A numerical validation of the regularized hysteresis model is provided in Appendix C. Estimation of sorption coefficients using the OED 31 / 50 14 12 10 8 6 4 2 0 14 12 10 8 6 4 2 6 6.1 6.2 0 0.95 1.003 1.05 (a) (b) 14 12 10 8 6 4 2 0 -1.04 -0.99 -0.93 (c) Figure 13. Probability density function approximated for the estimated parameters, computed using the sensitivity of single-step (c) and a multiple-step (a-b) experiments. 6.2. Searching the OED The OED is now searched among the experimental designs described in Section 3 for both single and multiple steps. The issue is to estimate one or several parameters among the five a, 1 , c ⋆ a, 2 , c ⋆ coefficients (cid:0) c ⋆ ∂u d, 0 , c ⋆ d, 1 , c ⋆ ∂c ∂c ⋆ difference and a Runge -- Kutta approach provided by ode45 solver in MatlabTM [49]. The equations to compute the sensitivity functions are given in Appendix A. d, 2(cid:1) . For this, the sensitivity functions Θ u, a , d , m = , m ∈ (cid:8) 0 , 1 , 2(cid:9) are computed using central finite- and Θ c, a, d, m = a, d, m ∂c ⋆ a, d, m J. Berger, T. Busser, D. Dutykh & N. Mendes 32 / 50 First, the OED is searched using the adsorption coefficients estimated in Section 5 and the desorption coefficients obtained from literature [45]: c ⋆ a, 1 = −0.99 , c ⋆ a, 2 = 1.003 , c ⋆ d, 0 = 0.75 , c ⋆ d, 1 = −1.24 , c ⋆ d, 2 = 0.89 . The Fourier number corresponds to the estimated one in Section 5 and equals Fo = 6.1× 10 −3 . The investigations are performed for both the single and multiple steps of relative humidity, identified in Table 2. For the sake of compactness, the results are illustrated only for the multiple steps experiments. By improving the model with hysteresis effects, one has to compute the sensitivity coefficients for both equations (6.2a) and (6.2b). The sensitivity coefficients Θ c and Θ u are shown in Figures 15(a) and 15(c) for the adsorption coefficients c ⋆ a, 2 . The variation of the sensitivity coefficients follows the changes in the boundary conditions u ∞ . The design 12 corresponds to the OED for each parameter to be estimated, as shown in Figure 14. On the contrary to the results obtained in Section 4, the design 20 does not allow to estimate the unknown parameters with accuracy. The influence of including the hysteresis effects in the mathematical model can be remarked in the determination of the OED. Indeed, by comparing Figures 15 and 16, it can be noticed that the sensitivity coefficients Θ c and Θ u have larger magnitudes for the OED than for the design 20 . For multiple-step experiments, a strong correlation is observed between the a, 1 and c ⋆ five coefficients (cid:0) c ⋆ a, 1 , c ⋆ a, 2 , c ⋆ d, 0 , c ⋆ d, 1 , c ⋆ d, 2(cid:1) : c ⋆ d, 0 c ⋆ a, 1 c ⋆ a, 2 c ⋆ d, 1 c ⋆ d, 2 c ⋆ a, 1 c ⋆ a, 2 c ⋆ d, 0 c ⋆ d, 1 c ⋆ d, 2 1 0.99669 0.99974 0.99473 0.97735 1 0.99663 1 0.99 0.999 0.99567 0.97941 0.99388 1 1 indicating that it is not possible to estimate more than two parameters of the model for such experiments. For single case experiments, the correlation is lower: c ⋆ a, 1 1 c ⋆ a, 1 c ⋆ a, 2 c ⋆ d, 0 c ⋆ d, 1 c ⋆ d, 2 c ⋆ a, 2 c ⋆ d, 0 c ⋆ d, 1 c ⋆ d, 2 1 0.98981 0.97193 0.89302 0.78741 0.98349 0.93466 0.85096 0.90551 0.98031 0.9713 1 1 1 a, 2 , c ⋆ Thus, for this case, it is possible to estimate a couple of two parameters among(cid:0) c ⋆ or (cid:0) c ⋆ d, 2(cid:1) d, 2(cid:1) . The OED results are synthesized in Table 4. For all experiments, the a, 1 , c ⋆ sensor should be located at the bottom of the material, near the impermeable face. The designs 2 (u i = 0.2 to u c = 1.5 ) and 12 (u i = 0.2 , u 1 c = 1.5 , u 3 c = 0.66 and a duration of each step τ = 8 ) provide the highest accuracy to estimate the parameters. Due to high correlation between the coefficients, it is important to note c = 0.66 , u 2 Estimation of sorption coefficients using the OED 33 / 50 Table 4. Synthesis of OED for the estimation of one or several parameters when the model account for hysteresis. Parameter(s) to be estimated Optimal Experimental Design Single-step Multiple-step Sensor position One parameter Multiple parameter 1 0.8 0.6 0.4 0.2 0 c ⋆ a, 1 , c ⋆ a, 1 , c ⋆ (cid:0) c ⋆ a, 2 , c ⋆ d, 0 , c ⋆ d, 2(cid:1) or (cid:0) c ⋆ d, 1 or c ⋆ a, 2 , c ⋆ d, 2 d, 2(cid:1) design 2 design 2 design 12 - X ◦ ∈ (cid:2) 0.85 , 1(cid:3) X ◦ ∈ (cid:2) 0.85 , 1(cid:3) 1 0.8 0.6 0.4 0.2 0 5 7 9 11 13 15 17 19 5 7 9 11 13 15 17 19 (a) (b) Figure 14. Variation of the criterion Ψ for the sixteen possible designs for the adsorption coefficients (a) and the desorption coefficients (b). that it is not possible to estimate all five coefficients considering the possible designs described in Table 2. If one aims at estimating the five coefficients, additional designs have to be planned with the experimental facility, including for instance other levels of relative humidity. 6.3. Comparing the numerical results with the experimental observa- tions Previous section aimed at illustrating the possibility of searching the OED with an improved model that includes the hysteresis effects. Since it is rather difficult to estimate the five coefficients due to strong correlations of the sensitivity functions, the purpose is now to show the influence of taking into account the hysteresis effects in the model. It should be noted that the regularized model is not needed so that the normal hysteresis J. Berger, T. Busser, D. Dutykh & N. Mendes 34 / 50 6 4 2 0 -2 -4 100 200 300 400 500 0 100 200 300 400 500 (a) (b) 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 3 2 1 0 -1 -2 -3 0 -0.05 -0.1 -0.15 -0.2 -0.25 -0.3 -0.35 -0.4 -0.45 0 100 200 300 400 500 0 100 200 300 400 500 (c) (d) Figure 15. Sensitivity coefficients Θ u (a,b) and Θ c (c,d) for the OED (design 12 , X = X ◦ = 1). model given by Equation (6.2b) is used for the present case study. To avoid stability restrictions, an implicit -- explicit numerical scheme, detailed in Appendix D, is employed to compute numerically the solution. The numerical predictions are compared with the experimental observations for the multiple-step experiment (design 20). The adsorption coefficients, estimated in Section 5, are used together with the desorption coefficients obtained from literature [45]. The Fourier number equals Fo = 6.1 × 10 −3 and the other parameters have the same numerical value as the ones mentioned in Section 5. Figure 17(a) shows the comparison be- tween the numerical predictions and the experimental data. The results from the physical model including the hysteresis effects are more satisfactory. Indeed, the residual is lower for Estimation of sorption coefficients using the OED 35 / 50 1.5 1 0.5 0 -0.5 -1 0 0.05 0 -0.05 -0.1 -0.15 -0.2 2.5 2 1.5 1 0.5 0 -0.5 -1 -1.5 -2 100 200 300 400 500 0 100 200 300 400 500 (a) (b) 0 -0.05 -0.1 -0.15 -0.2 -0.25 -0.3 -0.35 0 100 200 300 400 500 0 100 200 300 400 500 (c) (d) Figure 16. Sensitivity coefficients Θ u (a,b) and Θ c (c,d) for the design 20 , (X = X ◦ = 1). this model than for the model without hysteresis, as shown in Figure 17(b). Particularly, the importance of the hysteresis can be noted for the desorption phase t ∈ (cid:2) 200 , 300(cid:3) and the second adsorption phase t ∈ (cid:2) 400 , 600(cid:3) . The solution of Equation (6.2b) enables to compute the time evolution of the sorption coefficient c as illustrated in Figure 18(a). It is compared with the function ( c ◦ u ) ( t ) where u is computed using the model without hysteresis given by Eq. (2.11). The time variation of the coefficients are similar for the first adsorption part corresponding to t ∈ (cid:2) 0 , 200(cid:3) . Indeed, for this period, the computed sorption coefficient equals the adsorption curve as noticed in Figure 18(b). After this pe- riod, the coefficient computed with the hysteresis model decreases comparing to the one J. Berger, T. Busser, D. Dutykh & N. Mendes 36 / 50 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 0.3 0.2 0.1 0 -0.1 -0.2 0 200 400 600 200 400 600 (a) (b) Figure 17. Comparison of the numerical results with the experimental data (a) and their residual (b). 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 200 400 600 0.5 1 1.5 (a) (b) Figure 18. Variation of the sorption coefficient c according to time (a) and according to the computed field u (b). without hysteresis and oscillates between the adsorption and desorption curves as shown in Figure 18(b). 7. Final remarks Estimation of sorption coefficients using the OED 37 / 50 7.1. Conclusion In the context of building physics, inverse problems are encountered to estimate moisture dependent hygrothermal properties of porous materials, using measurements associated to heat and moisture transport. Two applications are distinguished. In the first case, concerning the diagnosis of existing building walls, there is a few a priori estimation of material properties. Moreover, measurements must be non-intrusive and non-destructive. In the second case, measurements are performed in the laboratory to calibrate the numerical model with the experimental data. This article is encompassed in these conditions, focused on the estimation of moisture sorption isotherm coefficients of a wood fiber material. First, the OED methodology has been described and used for searching the optimal ex- periment design, ensuring to provide the best accuracy of the identification method for the parameter estimation. The approach is based on the sensitivity functions of the unknown parameters, enabling to determine sensor location within the material and boundary con- ditions, according to an existing facility among 20 possible designs. It has been carried out considering a priori values of the unknown parameters. The facility allows to submit material to relative humidity steps on one surface, being all others moisture impermeable. Results have enhanced two designs: i) single step of relative humidity from 10 % to 75 % and ii) multiple steps of relative humidity 10 − 75 − 33 − 75 % , with a duration period of 8 days for each step. For each design, the sensor has to be placed as close as possible to the impermeable boundary. Then, experimental data has been provided according to the OED results for the two selected designs. The parameter estimation has been conducted by minimizing a cost function between the experimental data and the numerical results. The estimation has been accomplished using an interior point algorithm. Nine tests have been performed for the definition of the cost function J . The L 2 and L ∞ have been evaluated. Two series of tests aimed at estimating the three parameters using both experiments at the same time or separately with an iterative algorithm. The third series intended to estimate all five parameters of the material properties. Results have shown that the L 2 norm provided better results of the parameter estimation problem. Moreover, it was better to consider both experiments separately to estimate only three parameters of the problem. Within this approach, the algorithm requires only two iterations to compute the solution with less than 100 computations of the direct model. This approach has a really low computational cost compared to stochastic approaches, needing an order of 10 4 computations for similar problems. Another advantage of this approach is to use the sensitivity functions, computed during the search of the OED, to provide an approximation of the probability distribution function of the estimated parameters at a lower computational cost. As highlighted in Section 5, with the estimated parameters, a better agreement between the numerical model and the experimental data is observed. However, the importance of hysteresis effects were highlighted. Particularly, when cycles of desorption-adsorption processes take place, some discrepancies remain between experimental data and numerical predictions. Therefore, a new mathematical model has been proposed to take into account J. Berger, T. Busser, D. Dutykh & N. Mendes 38 / 50 the hysteresis effects on the sorption coefficients. A second differential equation has been added and increased to five the number of coefficients to be estimated. Two coefficients correspond to the adsorption curve and three to the desorption one. A regularized ver- sion of the hysteresis model was proposed to have continuous differentiable functions and, therefore, to be able to compute the sensitivity coefficients. Then, the OED was explored by computing the sensitivity coefficients of the five parameters of a family of scanning curves of adsorption and desorption processes. This clearly highlighted the possibility of including the hysteresis effects in the OED approach. The results draw attention to two designs: i) a single step of relative humidity from 10 % to 75 % and ii) multiple steps of relative humidity 10 − 33 − 75 − 33 % , with a 8-day time period for each step. The sensors have to be placed near the impermeable boundary. Finally, the numerical predictions, considering the hysteresis phenomenon, have been compared with the experimental observations of a multiple-step design. An efficient implicit -- explicit numerical scheme was proposed to compute the solution of the hysteretic model. The parameters of this model correspond to the estimated ones in Section 5 for the ad- sorption curve and to the a priori ones provided in the literature. The comparison has shown that the discrepancies are reduced, fitting better experimental data. During the simulation, the computed sorption coefficients oscillated between the ones from the main adsorption and desorption curves. 7.2. Outlooks and open-problems An interesting perspective of improvement concerns the assumptions related to the moisture sorption isotherm coefficients c ( u ). A parametrization was previously defined c ( u ) = 1 + c 1 u + c 2 u 2 and the parameter estimation problem aimed at identifying coefficients c 1 , c 2 (and Fo). An ambitious outlook could aim at estimating directly the function c ( u ), with inspiration from the following studies [31, 35]. Acknowledgments This work was partly funded by the French Environment and Energy Management Agency (ADEME), the "Assemblée des Pays de Savoie" (APS) and the French National Research Agency (ANR) through its Sustainable Cities and Buildings program (MOBAIR project ANR-12-VBDU-0009). The authors acknowledge the Junior Chair Research pro- gram "Building performance assessment, evaluation and enhancement" from the University of Savoie Mont Blanc in collaboration with The French Atomic and Alternative Energy Center (CEA) and Scientific and Technical Center for Buildings (CSTB) and the support of CNRS/INSIS (Cellule énergie) under the program "Projets Exploratoires -- 2017". The au- thors also acknowledge the Brazilian Agency CNPQ of the Ministry of Science, Technology and Innovation, for the financial support. Estimation of sorption coefficients using the OED 39 / 50 Nomenclature a a m c c b d h L P s P v r 12 R v T t U x v w λ δ φ ρ Latin letters moisture advection coefficient mass transfer coefficient moisture storage capacity specific heat moisture permeability convective vapour transfer coefficient length saturation pressure vapor pressure latent heat of evaporation water gas constant temperature time coordinate relative moisture concentration space coordinate mass average velocity specific moisture content Greek letters thermal conductivity thermal gradient coefficient relative humidity specific mass [s/m] [m 2/s] [kg/(m3.Pa)] J [ (kg.K) ] [s] [s/m] [m] [Pa] [Pa] [J/kg] [J/(kg.K)] [K] [s] [%] [m] [m/s] [kg/m3] [W/(m.K)] [K −1] [−] [kg/m3] J. Berger, T. Busser, D. Dutykh & N. Mendes 40 / 50 A. Equations for the computation of the sensitivity coeffi- cients This section provides the equations derived analytically from the mathematical model (Eq. (2.11)), to compute the sensitivity coefficients. A.1. Model without hysteresis The sensitivity coefficients are denoted as follows: Θ 0 def := ∂u ∂Fo , Θ 1 def := ∂u ∂c 1 , Θ 2 def := ∂u ∂c 2 . For the sake of clarity, the superscript ⋆ is omitted. The sensitivity coefficients verified the following equations. For Θ 0 : c ( u ) ∂Θ 0 ∂t For Θ 1 : = Fo d ( u ) ∂ 2Θ 0 ∂x 2 + Fo(cid:16) 2 d 1 ∂x(cid:19) 2 + d 1(cid:18) ∂u + d ( u ) ∂ 2u ∂x 2 ∂u ∂x − Pé(cid:17) ∂Θ 0 ∂x + Fo d 1 Θ 0 ∂ 2u ∂x 2 − Pé ∂u ∂x − (cid:16) c 1 Θ 0 + 2 c 2 u Θ 0(cid:17) ∂u ∂t . c ( u ) ∂Θ 1 ∂t = Fo d( u ) ∂ 2Θ 1 ∂x 2 + 2 Fo d 1 ∂Θ 1 ∂x − Fo Pé ∂Θ 1 ∂x ∂u ∂x + Fo d 1 Θ 1 ∂ 2u ∂x 2 − (cid:16) u + c 1 Θ 1 + 2 c 2 u Θ 1(cid:17) ∂u ∂t . and for Θ 2 : c ( u ) ∂Θ 2 ∂t = Fo d ( u ) ∂ 2Θ 2 ∂x 2 + 2 Fo d 1 ∂Θ 2 ∂x − Fo Pé ∂Θ 2 ∂x ∂u ∂x + Fo d 1 Θ 2 ∂ 2u ∂x 2 − (cid:16) c 1 Θ 2 + 2 c 2 u Θ 2 + u 2(cid:17) ∂u ∂t , A.2. Model with hysteresis The model with hysteresis includes two differential equations, recalled here: ∂u ∂x − Pé u! , c ∂u ∂t ∂c ∂t ∂ = Fo ∂x d( u ) = β Rsign (cid:18) ∂u ∂t (cid:19) ·(cid:18) c − c ads ( u )(cid:19) ·(cid:18) c − c des ( u )(cid:19) . Estimation of sorption coefficients using the OED 41 / 50 Therefore, two sensitivity coefficients have to be computed. The differential equations for Θ u, a, 1 = and Θ c, a, 1 = ∂u ∂c a, 1 ∂c ∂c a, 1 are: ∂Θ u, a, 1 ∂t = Fo d( u ) ∂ 2Θ u, a, 1 + Fo(cid:18) 2 d 1 ∂u ∂x − Pé(cid:19) ∂Θ u, a, 1 ∂x + Fo d 1 ∂ 2u ∂x 2 Θ u, a, 1 ∂x 2 ∂u ∂t , − Θ c, a, 1 ∂Θ c, a, 1 ∂t = β Rsign ′ (cid:18) ∂u ∂t (cid:18) c − c ads(cid:19) ·(cid:18) c − c des(cid:19) ∂t (cid:19) ∂Θ u, a, 1 ∂t (cid:19) ·(cid:18) Θ c, a, 1 − (cid:0) c 1, a Θ u, a, 1 + u + 2 c 2, a u Θ u, a, 1(cid:1)(cid:19) ·(cid:18) c − c des(cid:19) ∂t (cid:19) ·(cid:18) c − c ads(cid:19) ·(cid:18) Θ c, a, 1 − (cid:0) c 1, d Θ u, a, 1 + 2 c 2, d u Θ u, a, 1(cid:1)(cid:19) . + β Rsign (cid:18) ∂u + β Rsign (cid:18) ∂u For Θ u, a, 2 = ∂u ∂c a, 2 and Θ c, a, 2 = ∂c ∂c a, 2 : ∂Θ u, a, 2 ∂t = Fo d( u ) ∂ 2Θ u, a, 2 + Fo(cid:18) 2 d 1 ∂u ∂x − Pé(cid:19) ∂Θ u, a, 2 ∂x + Fo d 1 ∂ 2u ∂x 2 Θ u, a, 2 ∂x 2 ∂u ∂t , − Θ c, a, 2 ∂Θ c, a, 2 ∂t = β Rsign ′ (cid:18) ∂u ∂t (cid:18) c − c ads(cid:19) ·(cid:18) c − c des(cid:19) ∂t (cid:19) ∂Θ u, a, 2 ∂t (cid:19) ·(cid:18) Θ c, a, 2 − (cid:0) c 1, a Θ u, a, 2 + u 2 + 2 c 2, a u Θ u, a, 2(cid:1)(cid:19) ·(cid:18) c − c des(cid:19) ∂t (cid:19) ·(cid:18) c − c ads(cid:19) ·(cid:18) Θ c, a, 2 − (cid:0) c 1, d Θ u, a, 2 + 2 c 2, d u Θ u, a, 2(cid:1)(cid:19) . + β Rsign (cid:18) ∂u + β Rsign (cid:18) ∂u J. Berger, T. Busser, D. Dutykh & N. Mendes 42 / 50 For Θ u, d, 0 = ∂u ∂c d, 0 and Θ c, d, 0 = ∂c ∂c d, 0 : ∂Θ u, d, 0 ∂t = Fo d( u ) ∂ 2Θ u, d, 0 + Fo(cid:18) 2 d 1 ∂u ∂x − Pé(cid:19) ∂Θ u, d, 0 ∂x + Fo d 1 ∂ 2u ∂x 2 Θ u, d, 0 ∂x 2 ∂u ∂t , − Θ c, d, 0 ∂Θ c, d, 0 ∂t = β Rsign ′ (cid:18) ∂u ∂t (cid:18) c − c ads(cid:19) ·(cid:18) c − c des(cid:19) ∂t (cid:19) ∂Θ u, d, 0 ∂t (cid:19) ·(cid:18) Θ c, d, 0 − (cid:0) c 1, a Θ u, d, 0 + 2 c 2, a u Θ u, d, 0(cid:1)(cid:19) ·(cid:18) c − c des(cid:19) ∂t (cid:19) ·(cid:18) c − c ads(cid:19) ·(cid:18) Θ c, d, 0 − (cid:0) 1 + c 1, d Θ u, d, 0 + 2 c 2, d u Θ u, d, 0(cid:1)(cid:19) . + β Rsign (cid:18) ∂u + β Rsign (cid:18) ∂u For Θ u, d, 1 = and Θ c, d, 1 = ∂u ∂c d, 1 ∂c ∂c d, 1 : ∂Θ u, d, 1 ∂t = Fo d( u ) ∂ 2Θ u, d, 1 + Fo(cid:18) 2 d 1 ∂u ∂x − Pé(cid:19) ∂Θ u, d, 1 ∂x + Fo d 1 ∂ 2u ∂x 2 Θ u, d, 1 ∂x 2 ∂u ∂t , − Θ c, d, 1 ∂Θ c, d, 1 ∂t = β Rsign ′ (cid:18) ∂u ∂t (cid:18) c − c ads(cid:19) ·(cid:18) c − c des(cid:19) ∂t (cid:19) ∂Θ u, d, 1 ∂t (cid:19) ·(cid:18) Θ c, d, 1 − (cid:0) c 1, a Θ u, d, 1 + 2 c 2, a u Θ u, d, 1(cid:1)(cid:19) ·(cid:18) c − c des(cid:19) ∂t (cid:19) ·(cid:18) c − c ads(cid:19) ·(cid:18) Θ c, d, 1 − (cid:0) c 1, d Θ u, d, 1 + u + 2 c 2, d u Θ u, d, 1(cid:1)(cid:19) . + β Rsign (cid:18) ∂u + β Rsign (cid:18) ∂u For Θ u, d, 2 = and Θ c, d, 2 = ∂u ∂c d, 2 ∂c ∂c d, 2 : ∂Θ u, d, 2 ∂t = Fo d( u ) ∂ 2Θ u, d, 2 + Fo(cid:18) 2 d 1 ∂u ∂x − Pé(cid:19) ∂Θ u, d, 2 ∂x + Fo d 1 ∂ 2u ∂x 2 Θ u, d, 2 ∂x 2 ∂u ∂t , − Θ c, d, 2 ∂Θ c, d, 2 ∂t = β Rsign ′ (cid:18) ∂u ∂t (cid:18) c − c ads(cid:19) (cid:18) c − c des(cid:19) ∂t (cid:19) ∂Θ u, d, 2 ∂t (cid:19) ·(cid:18) Θ c, d, 2 − (cid:0) c 1, a Θ u, d, 2 + 2 c 2, a u Θ u, d, 2(cid:1)(cid:19) ·(cid:18) c − c des(cid:19) ∂t (cid:19) ·(cid:18) c − c ads(cid:19) ·(cid:18) Θ c, d, 2 − (cid:0) c 1, d Θ u, d, 2 + u 2 + 2 c 2, d u Θ u, d, 2(cid:1)(cid:19) . + β Rsign (cid:18) ∂u + β Rsign (cid:18) ∂u Estimation of sorption coefficients using the OED 43 / 50 The function Rsign ′ : R −→ (cid:8) 0 , 1(cid:9) is the regularized Dirac function: Rsign ′( x ) =   1 , x = 0 , 0 , x 6= 0 . B. Proving the structural identifiability of the parameters This section aims at justifying the identifiability of the unknown parameters for both model with and without hysteresis. We recall that a parameter P is Structurally Globally Identifiable (SGI) if the following condition is satisfied [53]: y ( P ) ≡ y ( P ′ ) =⇒ P ≡ P ′ , where y is the response of the model depending on parameter P . B.1. Model without hysteresis model (2.11), recalled here without the superscript ⋆ : First, the SGI is demonstrated for the estimation of parameters (cid:0) Fo , c 1 , c 2(cid:1) in the (cid:0) 1 + c 1 u + c 2 u 2(cid:1) ∂x (cid:0) 1 + d 1 u(cid:1) − Pé u! = 0 , It is assumed that u is observable. So as to prove identifiability, it is assumed that another set of parameters, denoted with a superscript ′ , holds: ∂u ∂x ∂u ∂t − Fo (B.1) ∂ 1 u ′ + c ′ (cid:0) 1 + c ′ 2 ( u ′ ) 2(cid:1) ∂u ′ ∂t − Fo ′ ∂ ∂x (cid:0) 1 + d 1 u ′(cid:1) ∂u ∂x − Pé u ′! = 0 , (B.2) . Thus, from Equations (B.1) and (B.2) we If u ≡ u ′ then have: ∂u ∂t ≡ ∂u ′ ∂t and ∂u ∂x ≡ ∂u ′ ∂x and Fo (cid:0) 1 + c 1 u + c 2 u 2(cid:1) ≡ (cid:0) 1 + c ′ − Pé u! ≡ Fo ′ ∂ ∂u ∂x 1 u ′ + c ′ 2 ( u ′ ) 2(cid:1) , ∂x (cid:0) 1 + d 1 u ′(cid:1) ∂u ∂x ∂ ∂x (cid:0) 1 + d 1 u(cid:1) Since u ≡ u ′ and u 2 ≡ ( u ′ ) 2 , it follows that − Pé u ′! . c 1 ≡ c ′ 1 , c 2 ≡ c ′ 2 , Fo ′ ≡ Fo ′ . Therefore, parameters (cid:0) Fo , c 1 , c 2(cid:1) are SGI for the model without hysteresis. J. Berger, T. Busser, D. Dutykh & N. Mendes 44 / 50 B.2. Model with hysteresis the model with hysteresis. For this, Eq. (6.1) is recalled omitting the superscript ⋆ : Now, the SGI for the five parameters (cid:0) c ⋆ = β sign (cid:18) ∂u ∂c ∂t ∂t (cid:19)(cid:18) c − (cid:0) 1 + c a, 1 u + c a, 2 u 2(cid:1)(cid:19) (cid:18) c − (cid:0) c d, 0 + c d, 1 u + c d, 2 u 2(cid:1)(cid:19) . Similarly, to prove the identifiability, another set of parameters is assumed: d, 2(cid:1) is demonstrated for a, 1 , c ⋆ a, 2 , c ⋆ d, 0 , c ⋆ d, 1 , c ⋆ ∂c ′ ∂t = β sign (cid:18) ∂u ′ ∂t (cid:19)(cid:18) c ′ − (cid:0) 1 + c ′ a, 1 u ′ + c ′ a, 2 ( u ′ ) 2(cid:1)(cid:19) d, 0 + c ′ d, 1 u ′ + c ′ (cid:18) c ′ − (cid:0) c ′ d, 2 ( u ′ ) 2(cid:1)(cid:19) . It is assumed that c ≡ c ′ , u ≡ u ′ and then ∂c ∂t MapleTM, by expansion it can be demonstrated that: ≡ ∂c ′ ∂t . Using the symbolic code c a, 1 ≡ c ′ a, 1 , c a, 2 ≡ c ′ a, 2 , c d, 0 ≡ c ′ d, 0 , c d, 1 ≡ c ′ d, 1 , c d, ,2 ≡ c ′ d, 2 , and that the parameters are SGI. C. Numerical validation of the regularized hysteresis model A computation using the regularized hysteresis model is carried out: c ⋆ ∂u ∂ ∂t ⋆ = Fo ∂c ⋆ ∂t ∂x ⋆ d ⋆( u ) = β Rsign (cid:18) ∂u ∂u ∂x ⋆ − Pé u! , ∂t (cid:19) ·(cid:18) c ⋆ − c ⋆ ads ( u )(cid:19) ·(cid:18) c ⋆ − c ⋆ des ( u )(cid:19) , where the numerical values of the coefficients are: Pé = 1 · 10 −2 , Fo = 2 · 10 −2 , c ⋆ des( u ) = 2.54 − 4.17 u + 3.02 u 2 , d ⋆( u ) = 0.86 + 0.25 u , c ⋆ ads( u ) = 3.36 − 6.11 u + 3.37 u 2 . β = 10 −3 , The initial and boundary conditions are defined in Eq. (2.11) with the following numerical values: Bi = 13.7 , u i = 0.2 , u ∞ = t ≥ 0 , t < 100 , t ≥ 100 , t < 200 , t ≥ 200 , t < 300 , t ≥ 300 , t < 400 , t ≥ 400 , t < 500 . 1.5 , 0.5 , 1.0 , 0.2 , 1.8 ,   Estimation of sorption coefficients using the OED 45 / 50 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 2.4 2.35 2.3 2.25 0 200 400 600 2.2 0 200 400 600 (a) (b) Figure 19. Time variation of the field u (a) and of the sorption capacity c (b) for the model with hysteresis and the regularised one. The case study is similar to the experimental designs investigated in this work. The simu- lation time horizon is t = 700 . The time variations of the field u is given in Figure 19(a). The results of the regularized and non-regularized model are compared to the model with no-hysteresis, considering only the adsorption curve. The importance of the hysteresis in the time variations of u can be noted. Figure 19(b) shows the time variation of c by com- putation of its differential equation. The variations of the sorption coefficient c with the computed values of u are shown in Figure 20(a). In both Figures 19(b) and 20(a), a perfect agreement is observed between the regularized and non-regularized models. Moreover, as noticed in Figure 20(b), the L 2 error of the fields u and c , computed between the regular- ized and non-regularized models, scales with 10 −5 and 10 −3 , respectively. The agreement between the results of the two models is very satisfactory, validating the implementation of the regularized hysteretic model. D. Implicit-Explicit numerical scheme for the hysteresis model To relax stability restriction, an implicit -- explicit numerical scheme is used to compute the solution of the hysteresis model: ∂c ∂t = β sign (cid:18) ∂u ∂t (cid:19) ·(cid:18) c − c ads ( u )(cid:19) ·(cid:18) c − c des ( u )(cid:19) . For the sake of clarity, the ⋆ superscript have been omitted. A uniform discretisation is considered for time intervals. The discretisation parameter is denoted using ∆t for the time. The discrete values of function c ( t ) are denoted by c n def := c ( t n ) with n ∈ (cid:8) 1 , . . . , N t(cid:9) . (D.1) J. Berger, T. Busser, D. Dutykh & N. Mendes 46 / 50 2.4 2.35 2.3 2.25 2.2 -3 10 -4 10 -5 10 -6 10 -7 10 -8 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 100 200 300 400 500 600 700 (a) (b) Figure 20. Variation of the sorption capacity c with the field u (a) according to the case study. Time variation of the L 2 error (b) for the fields u and c between the model with hysteresis and the regularised one. ∂u ∂t 1 When < 0 , Equation (D.1) is discretised according to: ∆t(cid:0) c n+1 − c n(cid:1) = β sign (cid:18) ∂u ∂t (cid:19) ·(cid:0) c n+1 − c ads(cid:1) ·(cid:0) c n − c des(cid:1) , which gives the explicit expression of c n+1 : c n+1 = c n − ∆t β sign (cid:18) ∂u 1 − ∆t β sign (cid:18) ∂u ∂t (cid:19) (cid:0) c n − c des(cid:1) c ads ∂t (cid:19) (cid:0) c n − c des(cid:1) . > 0 , Equation (D.1) is discretised according to: Similarly, when ∂u ∂t to obtain the explicit expression of c n+1 : 1 ∆t(cid:0) c n+1 − c n(cid:1) = β sign (cid:18) ∂u c n − ∆t β sign (cid:18) ∂u 1 − ∆t β sign (cid:18) ∂u ∂t (cid:19)(cid:0) c n − c ads(cid:1)(cid:0) c n+1 − c des(cid:1) , ∂t (cid:19) (cid:0) c n − c ads(cid:1) c des ∂t (cid:19) (cid:0) c n − c ads(cid:1) c n+1 = . This numerical scheme provides robust and stable results as already shown in Figures 17 and 18. 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1905.01580	3	1905	2019-06-13T17:34:15	Hot Electron Dynamics in Plasmonic Thermionic Emitters	[ "physics.app-ph", "cond-mat.mes-hall" ]	Thermionic converters generate electricity from thermal energy in a power cycle based on vacuum emission of electrons. While thermodynamically efficient, practical implementations are limited by the extreme temperatures required for electron emission (> 1500 K). Here, we show how metal nanostructures that support resonant plasmonic absorption enable an alternative strategy. High electronic temperatures required for efficient vacuum emission can be maintained during steady-state optical absorption while the lattice temperature remains within the range of thermal stability, below 600 K. We have also developed an optical thermometry technique based on anti-Stokes Raman spectroscopy that confirms these unique electron dynamics. Thermionic devices constructed from plasmonic absorbers show performance that can out-compete other strategies of concentrated solar power conversion in terms of efficiency and thermal stability.	physics.app-ph	physics	Hot Electron Dynamics in Plasmonic Thermionic Emitters Nicki Hogan1, Shengxiang Wu1, Matthew Sheldon1,2 1Department of Chemistry, Texas A&M University, College Station, TX, 77843-3255, USA. 2Department of Material Science and Engineering, Texas A&M University, College Station, TX, 77843-3255, USA. [email protected] Abstract: Thermionic converters generate electricity from thermal energy in a power cycle based on vacuum emission of electrons. While thermodynamically efficient, practical implementations are limited by the extreme temperatures required for electron emission (> 1500 K). Here, we show how metal nanostructures that support resonant plasmonic absorption enable an alternative strategy. The high temperatures required for efficient vacuum emission can be maintained in a sub-population of photoexcited "hot" electrons during steady-state optical illumination, while the lattice temperature of the metal remains within the range of thermal stability, below 600 K. We have also developed an optical thermometry technique based on anti-Stokes Raman spectroscopy that confirms these unique electron dynamics. Thermionic devices constructed from optimized plasmonic absorbers show performance that can out-compete other strategies of concentrated solar power conversion in terms of efficiency and thermal stability. Main Text: Metals that support surface plasmons, the coherent oscillation of free electrons, provide efficient coupling of electromagnetic radiation into extremely confined sub-wavelength "hot 1 spots" at nanoscale edges and corners. Strong resonant optical absorption via Landau damping generates a large transient population of photo-excited electron-hole pairs at these hot spots in the metal1. The photo-excited carriers relax quickly, first through electron-electron scattering (~fs) to form a thermal distribution of "hot" electrons at a significantly elevated temperature compared to the lattice. On a slower timescale (~ps) electrons relax by scattering with phonons, resulting in local photo-thermal heating of the lattice1. There has recently been significant interest to take advantage of the high kinetic energy of these hot electrons, before they thermalize with the lattice, for applications in photodetection2, optical energy conversion3,4, and catalysis5,6. In addition to the short lifetime, one major challenge is the limited escape cone of hot electron trajectories with suitable momentum to exit the metal. Notably, nanoscopic confinement increases the probability that a hot electron will reach a surface with appropriate momentum for collection in an external device or chemical reaction7,8. In this article, we show how the extraordinary photophysics of plasmonic hot electrons are particularly well suited for optoelectronic power conversion based on thermionic power cycles. In a thermionic convertor, a metal cathode emitter is brought to high temperature so that a large fraction of the electrons has kinetic energy greater than the metal's work function. Electrons are vacuum emitted and collected at a lower temperature anode to generate electrical power. In principle, thermionic convertors have theoretical efficiencies far exceeding thermoelectric or mechanical energy converters9. In practice, the large energy barrier of the work function impedes electron emission unless temperatures exceed ~1500 K. This high temperature requirement has hindered practical application of the technology, which was explored historically for concentrated solar-thermal power generation9,10, and more recently in conjunction with hybrid photovoltaic schemes 11,12. However, the approximately 100-fold smaller heat 2 capacity of the electron gas in metals13, compared with the lattice, entails that nanostructured plasmonic absorbers can maintain a sub-population of hot electrons at a temperature greatly in excess of the lattice during steady-state illumination. Thus, optimized nanostructures can be used to effectively decouple the high kinetic energy electrons require for efficient thermionic emission while maintaining lattice temperatures compatible with the thermal tolerance of the metal. In efforts to quantitatively understand photo-excited electron dynamics during thermionic power conversion, we have developed an optical thermometry technique based on anti-Stokes Raman spectroscopy that simultaneously determines lattice temperature, the hot electron temperature, and the size of the sub-population of hot electrons during steady-state illumination. Under optical powers spanning 106-1010 Wm-2 on nanostructured gold we observe lattice temperatures between 300-600 K, while up to 8% of the electron gas is maintained at temperatures well above 1500 K. When these illuminated plasmonic absorbers are used as cathodes in thermionic power converters we indeed observe optical-to-electrical power conversion consistent with the electronic temperature and no evidence of thermal degradation. Moreover, we confirm this unique mechanism for decoupling electronic and lattice temperature overcomes challenges that have impeded other thermionic strategies for concentrated solar thermal power conversion. Further, our analysis outlines nanoscale design features that impart prolonged hot electron lifetimes, up to ~1 μs observed here, and other favorable electron dynamics that benefit broad classes of emerging hot electron technologies. 3 a b c l p 500 nm h d 60 μm Fig. 1. (a) SEM and (b) optical image of the fabricated nanostructure. (c) Schematic of the unit cell with l =225 nm, p = 500 nm, and h = 100 nm on a 150 nm thick gold film. (d) The absorbance of the nanostructure (black) compared to a smooth gold thin film with thickness of 150 nm (red). Top-down lithographic techniques were used to fabricate a 90 μm square array of 225 nm × 225 nm × 100 nm gold nanocubes at a pitch of 500 nm on a 150 nm thick gold film. The structure provides strong field concentration at hot spots on the nanocubes where there is greater surface area intersecting escape cones for hot electron emission14 (See SI). Optical and SEM images are displayed in Fig. 1a, b. At the excitation wavelength (532 nm) there is an approximate 2-fold increase in absorption compared with a gold thin film (Fig. 1d), leading to increased photothermalization localized in the nanocubes. 4 Fig. 2. Measured anti-Stokes Raman signal from the nanostructure (solid black) and gold thin film (solid grey), both collected under 7.3 × 109 Wm-2 532 nm laser excitation. The fit to a one- temperature model (eq. 1, red dotted) and two-temperature model (eq. 2, blue dash) are shown. The one-temperature fit gives Tl = 459 K, while the two-temperature fit gives Tl = 430 K, Te = 10,040 K, and χ= 0.34%. Temperature measurements during photothermalization were achieved by collecting anti- Stokes Raman spectra under 532 nm continuous wave (CW) laser illumination. A representative anti-Stokes spectrum is shown in Fig. 2. The signal from the nanostructure is ~10x larger than a gold thin film, comparable with enhancements observed in surface enhanced Raman studies15. Direct scattering from phonons does not contribute to the Raman signal from noble metals16, therefore the broad frequency response is due to an anti-Stokes interaction directly with the electron gas. The physical origin of this anti-Stokes signal is still under some debate, with recent studies providing evidence that the signal may be due to photoluminescence rather than coherent scattering as in conventional Raman spectroscopy17. Regardless of the microscopic mechanism, the spectral-dependent intensity of the anti-Stokes spectrum has been established as an accurate 5 indicator of the lattice temperature of a noble metal18 -- 21. The anti-Stokes signal intensity therefore follows the Bose-Einstein thermal distribution of lattice excitations, as in eq. 1. I(Δω) = C ∗ D(Δω) ∗ ( e 1 hcΔω kTl − 1 ) (1) Here, I is the anti-Stokes signal intensity normalized by power and integration time as a function of the energy difference, Δω, from the Rayleigh line in m-1, and Tl is the lattice temperature in K. This expression includes a constant scaling factor, C, to account for experimental collection efficiency that is re-calibrated for each measurement. In addition, the signal intensity is proportional to the density of optical states, D(Δω), obtained from the reflection spectrum. Fitting our data to eq. 1 (Fig. 2, red dotted) proves inadequate as there is a large signal at high energy Raman shifts greater than -2000 cm-1 that is not well described by the Bose-Einstein distribution. However, by adapting the method of Szczerbiński et al. our data is readily described if additional terms are included to account for a sub-population of hot electrons, χ, with an energy distribution at an elevated temperature, Te 20. I(Δω) = C ∗ D(Δω) ∗ ( e 1 − χ hcΔω kTl − 1 + χ hcΔω kTe + 1 ) e (2) The magnitude of χ in the steady state depends on both the generation rate of hot electrons due to optical excitation, and the relaxation rate as electrons equilibrate to Tl via phonon scattering. Those carriers in thermal equilibrium with the lattice follow Bose-Einstein statistics, while the high-energy tail of the Raman signal is described by Fermi-Dirac statistics22. The fit to this two- temperature model (TTM) (Fig. 2, blue dash) is excellent for all samples and optical powers probed, spanning 107 to 1011 Wm-2. (See the SI for more details.) 6 a b c Fig. 3. The TTM fit for (a) lattice temperature, (b) electronic temperature, and (c) the percentage of hot electrons. These data are for the nanostructure under vacuum (blue diamonds), nanostructure in atmosphere (green circles), a gold thin film under vacuum (purple stars), and a gold thin film in atmosphere (red squares). The dependence of Te, Tl, and χ on optical power for the optimized nanostructure and for a 150 nm thick gold thin film control was determined by analyzing the Raman spectra using eq. 2. Samples were measured at atmosphere and under vacuum (0.010 mbar). The fitted data is summarized in Fig. 3. Melting and degradation of the samples occurred when the fitted Tl significantly exceeded ~600 K in vacuum. In addition, the formation of a surface coating of gold oxide was apparent when Tl exceeded ~450 K for samples in atmosphere (see SI Fig. S3), so data above those temperatures is omitted from this analysis23. In all experiments we observed a monotonic increase in Te and Tl as the optical power increased, with Te in excess of Tl by at least an order of magnitude. This trend is expected due to the lower heat capacity of the electron gas13,24, and the values we measure for Te and Tl are similar to those reported in transient absorption (TA) experiments19. To date, TA experiments have been the primary method for probing electron dynamics, however our experiments also access lower optical powers than can 7 be achieved in pulsed time-resolved studies. Due to the decrease in convection, there is both a higher fitted Te and Tl for samples under vacuum compared to samples in atmosphere. In all studies the nanostructure reaches significantly higher Te and Tl than gold thin films at equivalent optical powers, due to the greater absorption and photothermalization. A unique capability of our experiments that cannot be achieved readily in pulsed TA studies is quantification of the size of the hot electron population, χ. An analysis of χ from our fitted spectra therefore provides important new information about how the availability of hot electrons depends on optical power and temperature under CW illumination that is more directly comparable to operating conditions for emerging hot-electron-based technologies. Interestingly in all experiments we observe a clear inverse correlation between Te and χ as optical power increases. One may initially expect that increases in optical power would lead to a greater rate of electronic excitation and thus a larger steady-state population of hot electrons. We hypothesize the opposite behavior is due to the increase in electron-phonon coupling as temperature increases, providing faster relaxation of the hot electrons that overwhelms the increase of the excitation rate. Our hypothesis is supported below by an analysis of the hot electron lifetime, τ, and electron-phonon coupling constant, G , both calculated from χ , also allowing for direct comparison of our findings with established TA measurements and computational studies22,25. 8 a b Fig. 4. (a) Calculated lifetime and (b) coupling constant for the nanostructure under vacuum (blue diamonds), nanostructure in atmosphere (green circles), gold thin film under vacuum (purple stars), and a gold thin film in atmosphere (red squares). The lifetime of hot electrons within the elevated temperature distribution can be determined by comparing the size of the steady-state sub-population of hot electrons with the rate of hot electron generation. If it is assumed that every absorbed photon produces a transiently excited electron, then τ = χρV Nσ (3) where ρ is the electron density of gold26, V is the volume of the metal interacting with the light, N is the incident number of photons per second, and σ is the experimentally measured absorbance. See the SI for more details. As can be seen in Fig. 4, for all four data sets there is a monotonic decrease in τ as the incident optical power is increased. At the highest optical powers τ approaches picosecond timescales, in agreement with TA measurements at similar powers27. Further, samples under vacuum show significantly longer τ than those at atmospheric pressure. We hypothesize that this difference may be due to surface collisions with gas molecules such as 9 oxygen23,28. The observation of gold oxide formation at higher optical power provides further evidence that hot electrons interact with oxygen during illumination. Further analysis of χ allows us to determine the electron-phonon coupling constant, G, independently from the lifetime. In the TTM well-established in TA studies, the time response of Te is related to volumetric electronic heat capacity, Ce, by the following relation22: χ ∂(CeTe) ∂t = χG(Te − Tl) + Q (4) Where G is the coupling constant in Wm-3K-1 and Q is the incident power in Wm-3 coupled into the absorbing volume of the metal. We solve for G, as the time derivative goes to zero in the steady state. We have shown above that in atmosphere there are significant environmental contributions to the hot electron lifetime, implying that G accounts for coupling to all relaxation pathways. However in vacuum it is expected that electron-phonon coupling will dominate relaxation. For all samples there is an increase in G as a function of temperature, in agreement with ab initio calculations and experimental studies25. In vacuum the environmental influences are minimized, and within the spread of the data, the nanostructure and thin film show an equivalent coupling constant that agrees with calculated values for nanoscale gold22. Notably, in atmosphere the gold thin film exhibits a larger G than the nanostructure at the same optical power. We hypothesize this trend in G is due to a decrease in the active surface area with hot electrons, likely near electromagnetic hot spots, and that only gas molecule collisions in these locations contribute to relaxation. The net result is that the nanostructure achieves much greater Te under equivalent optical power, and further, hot electrons have longer lifetimes compared with thin films at the same Te in atmosphere. Both behaviors are desirable in devices that take advantage 10 of hot electrons, and our results suggest optical designs that decrease the relative volume in which hot electrons are generated could further optimize this response. 532 nm ITO Au l Z o a d a c b d Fig. 5. (a) Schematic of thermionic emission measurement. (b) J-V curve measured at different optical powers. (c) Measured JSC (square) and VOC (circle) versus the calculated temperature according to a one-temperature model. The vertical dashed lines indicate the discrepancies in calculated temperature based on JSC (red) or VOC (blue). (d) Fitted electronic temperature (circle) and percentage of hot electrons χ (square) according to the two-temperature model of eq. 5. In order to demonstrate that the hot electrons can perform work, we constructed a thermionic power convertor using the same nanostructure from Fig. 1 as an emitter with an ITO counter-electrode as a collector (Fig. 5a). The current density, J, was measured via a lock-in amplification scheme from parallel electrodes separated by 200 μm during 532 nm CW illumination under vacuum (0.010 mbar), see SI for further details. The power generation region of the current-voltage (J-V) response is depicted in Fig. 5b. The open-circuit voltage (VOC ) 11 reported here represents the retarding bias at which the current density reaches the noise level for the lock-in amplifier (see SI). The downward curvature of the J-V response indicates the presence of space charge effects during the measurement9. Thermionic emission current density is conventionally described using Richardson's equation, which we adapted to accommodate a TTM. Because only the fraction of hot electrons, χ, at temperature Te provide a non-negligible contribution to the thermionic current, J = χATe 2e −(W+ϕbias+ϕsc) kTe (5) where A = 1.2017 × 107 Am-2K-2 is the Richardson's constant, W = 5.1 eV is the work function of gold29, ϕbias is the external potential with the positive sign indicating a retarding bias, and ϕSC is the additional potential due to the electrostatic field of the space charge, calculated using Langmuir's space charge theory30. If we analyze our data assuming a one temperature model, then the short circuit current at zero bias, JSC,and the VOC measured from the J-V response are inconsistent with a unique fitted temperature. However, for each optical power probed there is a unique combination of Te and χ that can be input into eq. 5 to accurately reproduce both the experimentally measured JSC and VOC, as summarized in Fig. 5d. We find that Te monotonically increased with optical power, with the same inverse relationship between χ and Te measured in the Raman studies above. Further, the magnitude of χ is consistent with the Raman fitting under the same optical powers, though the fitted Te based on the device response is somewhat lower. Several factors could give rise to this discrepancy, and we hypothesize that the largest source of error may be due to the more complex geometry of the space charge for electrons emitted by the nanostructure surface in comparison with the parallel plate geometry assumed in Langmuir's space charge theory30. (See SI for more discussion.) We 12 note that the inverse correlation between Te and χ is manifest independent of what analysis is used to model the space charge effect or other non-idealities not accounted for in eq. 5. As an important point of comparison, we observed no measurable current under any optical power when a gold thin film was used as the emitter, even though both the thin film and nanostructure reached comparable Te according to the Raman fitting. This difference is likely due to a 3-fold increase, at minimum, in suitable escape cones for hot electrons in the nanocubes, and highlights how momentum constraints are relaxed in the plasmonic nanostructure. a c 10 μm b d Fig. 6. (a) SEM image of a thermally isolated gold nanostructure (b) Fitted electronic temperature (circles) and percentage of hot electrons (squares) according to the two-temperature model of eq. 5 (c) Measured optical power conversion efficiency and (d) projected optical power conversion as a function of solar concentration factor, assuming a decreased work function, W = 1.6 eV. The blue crosses correspond to the optical powers probed experimentally. 13 To demonstrate the potential of this strategy for solar power conversion, an additional sample was prepared that minimized losses due to conduction. The nanostructure was fabricated on a 50 nm thick Si3N4 membrane. Focused ion beam etching was used to perforate the membrane and thermally isolate a 6 x 6 μm section of the array (Fig. 6). In vacuum, the device achieved optical power conversion efficiency between 10-8 -- 10-7 %, under 4 × 106 -- 2.1 × 107 Wm-2. This optical power range is comparable to that employed in solar-thermal conversion schemes, where solar concentration factors are commonly between 1500 -- 4000x. While the sample showed no evidence of thermal degradation, the seemingly low efficiency is due to the large work function of gold, W = 5.1 eV. It is common practice during thermionic device operation to include rarified Cs metal vapor to both decrease W via surface adsorption and minimize space charge effects. Gold surfaces with sub-monolayer cesium have a reported work function of W = 1.6 eV31. Assuming the same photo-thermal response measured here but with W = 1.6 eV, a maximum conversion efficiency of 74.9% is predicted to occur at 190x solar concentration, based on the trade-off between Te and 𝜒. If practically achievable, such high efficiency for collecting hot electrons would significantly decrease the optical energy that is available to promote heating of the lattice through electron-phonon coupling, further promoting stability of the emitter. See the SI for more details on this calculation. For comparison, state-of- the-art solar-thermal conversion strategies achieve ~30% efficiency commonly at temperatures greater than 1000 K 32. In conclusion, we have demonstrated a new opto-electronic power conversion mechanism that uses plasmonic nanostructures to decouple electronic temperature and lattice temperature during steady-state optical illumination of a thermionic emitter. We have also developed an optical thermometry technique based on anti-Stokes Raman spectroscopy to quantify these 14 separate temperatures, as well as the size of the sub-population of hot electrons. Our results show an inverse relationship between the temperature and the population of the hot electron gas, and analysis of the lifetime and electron-phonon coupling show how designs that decrease the volume of the metal can further optimize the hot electron dynamics. When integrated into thermionic devices the plasmonic cathodes provide optical power conversion efficiency consistent with the electronic temperature, while maintaining significantly lower lattice temperatures. Thus, we demonstrated how this mechanism can overcome challenges related to thermal stability that have historically limited the use of thermionic devices for solar-thermal energy conversion. We believe the remarkable tailorability of plasmonic nanostructures may allow further opportunities for very efficient solar energy conversion based on this strategy. Methods FABRICATION: To prepare the nanostructures, a 5 nm Cr sticking layer followed by a 150 nm Au thin film were deposited using thermal deposition (Lesker PVD e-beam evaporator) on a commercially available silicon TEM grid with a 50 nm Si3N4 membrane windows (Ted Pella). A layer of PMMA/MMA 9% in ethyl lactate (MicroChem) followed by a layer of 2% PMMA in anisole (MicroChem) were spin coated to form a bilayer resist. Electron beam lithography was performed using a Tescan FE-SEM instrument. A top Au layer was deposited followed by removal of the polymer mask in acetone. For thermally isolated samples, focused ion beam (FIB) etching was performed using a Xe source. (Tescan FERA-3 FIB-SEM). SPECTROSCOPY: Anti-Stokes Raman spectra were collected using a confocal Raman microscope (Witec RA300) with samples in a vacuum heating microscope stage attached to a vacuum pump (Linkam TS1500VE). Vacuum experiments were performed at a pressure of 0.011 mbar. Samples were illuminated by a Nd:Yag laser at 532 nm and focused on the sample using a 15 20x objective with a 0.4 NA. Reflection spectra were taken by using the same stage setup with a white light source. The measured reflection signal was normalized to the source spectrum to give the reflectance of the surfaces. DEVICE: For the measurement of the hot electron thermionic emission current density, a pair of parallel electrodes composed of nanostructured gold patterns and an ITO glass slide was constructed. A 200 μm spacer separating the two electrodes was made of Kapton tape (attached to ITO glass) and copper tape (attached to the substrate of gold nanostructures) to ensure good electrical contact. The assembled electrodes were placed in the same microscope stage as above (Linkam TS1500VE) to measure the thermionic emission current under vacuum (<10-5 Torr). The electrodes were connected to a source-measure unit (Keithley 2450) in order to measure the current at varying bias voltage. The light from a CW diode laser emitting at 532 nm was used for the photoexcitation, which was focused on the gold nanostructures through a 50× objective to a focus spot on the sample with a beam diameter of ~5.6 μm. The thermionic emission current was measured with a lock-in amplifier (Stanford Research Systems, SR830) by chopping the excitation light at 47 Hz. For each power density used, the bias voltage was swept from -0.2 V (accelerating bias) to 1 V (retarding bias). Acknowledgements This work is funded by the Air Force Office of Scientific Research under award number FA9550-16-1-0154. M.S. also acknowledges support from the Welch Foundation (A-1886). Author Contributions N.H. fabricated devices and performed spectroscopy. S.W performed electronic device measurements. M.S. supervised the project. All authors participated in data analysis. 16 Competing Interests Authors declare no competing interests. References 1. Brongersma, M. L., Halas, N. J. & Nordlander, P. Plasmon-induced hot carrier science and technology. Nat. Nanotechnol. 10, 25 -- 34 (2015). 2. Knight, M. W., Sobhani, H., Nordlander, P. & Halas, N. J. Photodetection with Active Optical Antennas. Science (80-. ). 332, 702 -- 704 (2011). 3. Wu, S. & Sheldon, M. T. Optical power conversion via tunneling of plasmonic hot carriers. ACS Photonics 5, 2516 -- 2523 (2018). 4. Linic, S., Christopher, P. & Ingram, D. B. Plasmonic-metal nanostructures for efficient conversion of solar to chemical energy. Nat. Mater. 10, 911 -- 921 (2011). 5. Nordlander, P. et al. Quantifying hot carrier and thermal contributions in plasmonic photocatalysis. Science (80-. ). 362, 69 -- 72 (2018). 6. Mukherjee, S. et al. Hot electrons do the impossible: Plasmon-induced dissociation of H2 on Au. Nano Lett. 13, 240 -- 247 (2013). 7. Leenheer, A. J., Narang, P., Lewis, N. S. & Atwater, H. A. Solar energy conversion via hot electron internal photoemission in metallic nanostructures: Efficiency estimates. J. Appl. Phys. 115, 134301 (2014). 8. Prineha, N., Ravishankar, S. & A., A. H. Plasmonic hot carrier dynamics in solid-state and chemical systems for energy conversion. Nanophotonics 5, 96 (2016). 9. Hatsopoulos, G. N. & Gyftopoulos, E. P. Thermionic Energy Conversion, Volume 1: 17 Processes and Devices. (MIT Press, 1973). 10. Xiao, G. et al. Thermionic energy conversion for concentrating solar power. Appl. 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(John Wiley & Sons, Inc., 1999). 17. Cai, Y. Y. et al. Anti-stokes emission from hot carriers in gold nanorods. Nano Lett. 19, 1067 -- 1073 (2019). 18. Xie, X. & Cahill, D. G. Thermometry of plasmonic nanostructures by anti-Stokes electronic Raman scattering. Appl. Phys. Lett. 109, 183104 (2016). 18 19. Huang, J., Wang, W., Murphy, C. J. & Cahill, D. G. Resonant secondary light emission from plasmonic Au nanostructures at high electron temperatures created by pulsed-laser excitation. Proc. Natl. Acad. Sci. 111, 906 -- 911 (2014). 20. Szczerbiński, J., Gyr, L., Kaeslin, J. & Zenobi, R. Plasmon-driven photocatalysis leads to products known from E-beam and X-ray-induced surface chemistry. Nano Lett. 18, 6740 -- 6749 (2018). 21. Carattino, A., Caldarola, M. & Orrit, M. Gold nanoparticles as absolute nanothermometers. Nano Lett. 18, 874 -- 880 (2018). 22. Singh, N. Two-temperature model of non-equilibrium electron relaxation: A review. Int. J. Mod. Phys. B 24, 1141 -- 1158 (2010). 23. Wang, X., Evans, C. I. & Natelson, D. Photothermoelectric Detection of Gold Oxide Nonthermal Decomposition. Nano Lett. 18, 6557 -- 6562 (2018). 24. Lin, Z. & Zhigilei, L. V. Thermal excitation of d band electrons in Au: Implications for laser-induced phase transformations. Proc. SPIE 6261, 62610U (2006). 25. Brown, A. M., Sundararaman, R., Narang, P., Goddard, W. A. & Atwater, H. A. Ab initio phonon coupling and optical response of hot electrons in plasmonic metals. Phys. Rev. B 94, 1 -- 10 (2016). 26. Hanke, F. & Björk, J. Structure and local reactivity of the Au(111) surface reconstruction. Phys. Rev. B 87, 235422 (2013). 27. Bauer, C., Abid, J. P. & Girault, H. H. Size dependence investigations of hot electron cooling dynamics in metal/adsorbates nanoparticles. Chem. Phys. 319, 409 -- 421 (2005). 19 28. Foerster, B. et al. Chemical interface damping depends on electrons reaching the surface. ACS Nano 11, 2886 -- 2893 (2017). 29. Ford, R. R. & Pritchard, J. Work functions of gold and silver films. Trans. Faraday Soc. 67, 216 (1971). 30. Hatsopoulos, G. N. & Gyftopoulos, E. P. Thermionic Energy Conversion, Volume 2 :Theory, Technology, and Application. (MIT Press, 1979). 31. LaRue, J. L. et al. The work function of submonolayer cesium-covered gold: A photoelectron spectroscopy study. J. Chem. Phys. 129, 024709 (2008). 32. Siva Reddy, V., Kaushik, S. C., Ranjan, K. R. & Tyagi, S. K. State-of-the-art of solar thermal power plants -- A review. Renew. Sustain. Energy Rev. 27, 258 -- 273 (2013). 20 Hot Electron Dynamics in Plasmonic Thermionic Emitters Nicki Hogan1, Shengxiang Wu1, Matthew Sheldon1,2 1Department of Chemistry, Texas A&M University, College Station, TX, 77843-3255, USA. 2Department of Material Science and Engineering, Texas A&M University, College Station, TX, 77843-3255, USA. [email protected] Supplemental Information Field Enhancement Map of Nanocubes with 532 nm Excitation To demonstrate the location of electromagnetic 'hot spots' in the gold nanostructure, we calculated the electromagnetic field enhancement using full wave optical simulations (FDTD method, Lumerical Inc.). The nanostructure simulated was a 225 x 225 x100 nm gold cube on a 150 nm gold film, with the Au refractive index from Johnson and Christy33. Light was injected using a planewave source and monitored at 532 nm. Periodic boundary conditions were used to simulate an infinite array with periodicity equivalent to the fabricated samples analyzed in the study. Maximum field enhancement is localized to edges and corners of the nanocubes with a maximum field enhancement of approximately 185x at the corners. 21 a b c Fig. S1. (a) Schematic of the locations monitored on the surface of the nanostructure with the corresponding field enhancement along (b) the top face of the nanocube and (c) an edge of one nanocube. 22 Representative Full Raman Spectrum a b Fig. S2. (a) A representative anti-Stokes spectrum across the entire spectral range collected during the measurement. Data in the spectral range between -3500 -- -500 cm-1 was fitted according eq. 2 in the main text. This spectrum corresponds to a gold nanostructure in atmosphere under an optical power of 4.6 x 109 W/m2. The peak at 0 cm-1 is due to the Rayleigh line from laser excitation not blocked by the filter. The width of the laser line can be seen in (b) which is the spectra of a silicon substrate at the same incident power. The laser line tails off at around -500 cm-1 so that spectral range was omitted during fitting. 23 Evidence of Gold Oxide Fig. S3. A representative spectra from a gold film at 1 x 1010 W/m2 which shows the formation of Raman peaks at 1350 and 1580 cm-1 and their corresponding anti-Stokes peaks. We attribute these peaks to the formation of surface gold oxide under high optical power. Fitting the Anti-Stokes Raman Signal to the Two-Temperature Model The Anti-stokes emission data is fit to eq. 2 using a linear least squares analysis with four free fit parameters: Tl,Te, χ, and C. The quality of fit was determined by minimizing the squares of the residuals. In order to prevent finding local minima in the residual space we fit the data by systematically varying all combinations of starting conditions for the fitting routine across 5 orders of magnitude, and then found the solution that gave the global minimum of the residual. In addition, due to the relatively smaller magnitude of the signal at higher energies, where the electronic temperature is the dominant contribution to the signal, we instead fit to the log2 of the data, in order to put greater weight on the component of the signal arising from the hot electron temperature. 24 Using a Boltzmann Distribution Instead of a Fermi-Dirac Distribution In addition to using Fermi-Dirac statistics to model the hot electron distribution, we also fitted for temperature assuming the contribution from the hot electron temperature could be modeled as a Boltzmann distribution. Then, eq. 2 can be rewritten as the following: I(Δ𝜔) = C ∗ D(Δ𝜔) ∗ ( 1−χ hcΔω kTl −1 e + χ hcΔω kTe e ) (S1) The Raman spectra fit to this expression with equal fidelity as the data reported in the main manuscript, however the fitted electronic temperatures are significantly higher than what is reported in other literature at equivalent optical power17,19,20. Fig. S4. (a) The lattice and (b) electronic temperature as well as (c) the fraction of hot electrons when using Boltzmann statistics to fit the high-energy region of the spectrum. These data are for the nanostructure under vacuum (blue diamonds), nanostructure in atmosphere (green circles), a gold thin film in atmosphere (red squares), and a gold thin film under vacuum (purple stars). 25 Calculating Interaction Volume The interaction volume of the excitation source at the sample surface for the calculation of the lifetime in eq. 3 is determined using the spot size of the laser on the surface and the penetration depth of the light into the material. The spot size was determined using an optical image to have a radius of 0.8 μm. The penetration depth was calculated from the absorption coefficient34. The absorption coefficient, α, is a function of the imaginary component of the refractive index, n, at the wavelength used for excitation this study (532 nm). Based on the dielectric function of Au reported by Johnson and Christy33. α = 4π λ Im(n) = 5.26 × 105 cm−1 (S2) The penetration depth is defined as the distance at which light has decayed to 1/e intensity compared to the incident intensity34. d = 1 α = 19 nm (S3) 26 Determination of VOC During Device Measurements As shown in Fig S5, we define open circuit voltage, VOC, as the bias voltage at which the lock-in amplifier can no longer lock onto the signal. The ITO does not contribute a reverse current during the experiment. Fig. S5. a) J-V curve measured at different power densities and (b) Corresponding lock-in phase vs applying bias voltage recorded at each power density. Determination of Te Using the Modified Richardson's Equation J = χATe 2e −(W+ϕbias+ϕSC) kTe (S4) Assuming the hot carriers at an elevated electronic temperature comprise a small fraction of the total electron gas during steady state illumination, we determined a unique combination of Te and χ graphically, by plotting the iso-lines of JSC and VOC at each incident optical power, as shown in panels b-f in Fig. S6. Each iso-line corresponds to any combination of Te and χ that 27 gives the measured value of JSC (blue) or VOC (red) at that optical power. We see that there is only one combination of Te and χ that is consistent with both measured quantities. a d b e c f Fig. S6. (a) Experimentally determined JSC and VOC vs. optical power, (b)-(f) Determination of electronic temperature and hot electron fraction using the modified Richardson's equation (blue lines and red lines are iso-lines of JSC and VOC respectively). Space Charge Potential The space charge potential is calculated using Child-Langmuir theory across a vacuum junction with a gap distance, d, in which the saturation thermionic emission current JES is first calculated using Richardson's equation at a given Te and χ. The critical current JR is then calculated using eq. S5(30). JR = 9.664 × 10−6 ∗ ( 3/2 ) kT e d2 (S5) 28 The experimentally determined currents reside in the range between JR and JES indicating that space charge limited the current collected during experiments. Therefore, the additional space charge potential is calculated using eq. S630. ϕsc = ekTeln JES J (S6) Where e is electron charge, k is Boltzmann constant. 29 Summary of Measurements from an Isolated Nanostructure a c e l p h 400 nm b d f 10 μm Fig. S7. (a) Schematic of gold nanostructure, (l = 160 nm, p = 380 nm, h = 100 nm)(b), (c) SEM images of thermally-isolated gold nanostructure, (d) Absorption of gold nanostructures (black) and gold thin film (red), (e) J-V response of thermally-isolated gold nanostructures and (f) Corresponding phase dependence during lock-in measurement. Projected Efficiency for Thermally Isolated Gold Nanostructure with Cs Due to the high work function of Au (W = 5.1 eV), there is a low thermionic current at the electronic temperatures induced during our experiments. At low current density, the emitted 30 electrons do not remove enough energy from the system to significantly perturb the electronic and lattice temperature, similar to a theoretical scenario in which no current is emitted and all optical power goes to photo-thermalization. Thus, the J-V response we measured provides a calibration that relates both the electronic temperature and the population of hot electrons at a given incident optical power (SI Fig. S8, blue data), when the temperature of the system is not lowered by the collection of thermionic current. We extrapolate this relationship to zero incident optical power to ensure 100% of the electrons are at room temperature (SI Fig. S8, red trace). a b Fig. S8. (a) Experimentally determined Te vs optical power and the fitted relationship (red trace), ensuring zero incident power gives Te = 300 K (b) Experimentally determined χ vs optical power and fitted relationship (red trace) ensuring that zero incident optical power gives χ = 100%. However, if the work function of the cathode is lowered by the addition of Cs, the increase in emission current can draw enough electrical power, Pelectrical, from the system to significantly lower the steady-state electronic and lattice temperature. Therefore, the fraction of the absorbed power Pheating that can contribute to heating is decreased compared with the incident optical power, Poptical: 31 Pheating = Poptical − Pelectrical Te, χ By these relations, Pelectrical can be calculated assuming a given Te and χ, which is further constrained by the power Pheating available to heat the electron gas. Thus, this imposes a self- consistent condition that results in a unique combination of Te and χ at any incident optical power, as well as the corresponding Pelectrical, based on the calibration above. The summary of this result is the data in Fig. 6 in the main manuscript, reproduced in SI Fig. S9 below. Fig. S9. The projected efficiency of an isolated gold nanostructure thermionic emitter as a function of solar concentration factor, assuming the device is in an atmosphere of rarified Cs vapor with the gold work function W = 1.6 eV. The blue crosses correspond to the optical powers measured experimentally. Additional References 33. Johnson, P. B. & Christy, R. W. Optical constants of the noble metals. Phys. Rev. B 6, 4370 -- 4379 (1972). 34. Gersten, J. & Smith, F. The Physics and Chemistry of Materials. (2001). 32
1706.08677	1	1706	2017-06-27T05:49:53	Helical and skyrmion lattice phases in three-dimensional chiral magnets: Effect of anisotropic interactions	[ "physics.app-ph" ]	In this work, we study the magnetic orders of the classical spin model with the anisotropic exchange and Dzyaloshinskii-Moriya interactions in order to understand the uniaxial stress effect in chiral magnets such as MnSi. Variational zero temperature (T) calculated results demonstrate that various helical orders can be developed depending on the magnitude of the interaction anisotropy, consistent with the experimental observations at low T. Furthermore, the creation and annihilation of the skyrmions by the uniaxial pressure can be also qualitatively reproduced in our Monte Carlo simulations. Thus, our work suggests that the interaction anisotropy tuned by applied uniaxial stress may play an essential role in modulating the magnetic orders in strained chiral magnets.	physics.app-ph	physics	Revised manuscript submitted to Scientific Reports (SREP-17-15789) SUBJECT AREAS: Magnetic Properties and Materials; Phase transitions and critical phenomena Correspondence and requests for materials should be addressed to M.Q. (email: [email protected]) or J.-M.L. (email: [email protected]) Helical and skyrmion lattice phases in three-dimensional chiral magnets: Effect of anisotropic interactions J. Chen1, W. P. Cai1, M. H. Qin1 , S. Dong2, X. B. Lu1, X. S. Gao1, and J. -M. Liu3 1Institute for Advanced Materials, South China Academy of Advanced Optoelectronics and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou 510006, China 2Department of Physics, Southeast University, Nanjing 211189, China 3Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China In this work, we study the magnetic orders of the classical spin model with the anisotropic exchange and Dzyaloshinskii-Moriya interactions in order to understand the uniaxial stress effect in chiral magnets such as MnSi. Variational zero temperature (T) calculated results demonstrate that various helical orders can be developed depending on the magnitude of the interaction anisotropy, consistent with the experimental observations at low T. Furthermore, the creation and annihilation of the skyrmions by the uniaxial pressure can be also qualitatively reproduced in our Monte Carlo simulations. Thus, our work suggests that the interaction anisotropy tuned by applied uniaxial stress may play an essential role in modulating the magnetic orders in strained chiral magnets. Keywords: chiral magnets, strain effect, magnetic order In the past a few years, the nontrivial magnetic orders observed in chiral magnets such as MnSi [1-3], Fe1xCoxSi [4] and FeGe [5, 6] have been attracting continuous attentions due to their interesting physics and potential applications for future memory technology. Specifically, a helical order with a single ordering wave vector k (point along the [111] axis in MnSi, for example) is developed at low temperatures (T) under zero magnetic field (h), resulting from the competition between the ferromagnetic (FM) exchange interaction and the Dzyaloshinskii-Moriya (DM) interaction [7, 8]. When a finite h is applied, the helical order is replaced by the conical phase to save the Zeeman energy. More interestingly, a skyrmion lattice phase [9] (with a vortex-like spin configuration where the spins point in all directions forming a sphere) is stabilized in a certain (T, h) region, and is proposed to be potentially used for data encoding because of its efficient modulation by ultralow current density [10, 11] (~105 106 A m-2, orders of magnitude smaller than that for domain-wall manipulation) and its topological stability. Theoretically, the cooperation of the energy competition (among the FM, DM, and Zeeman couplings) and thermal fluctuations is suggested to contribute to the stabilization of the skyrmion lattice phase [12] in bulk chiral magnets, and Rashba spin-orbit coupling in two-dimensional materials is believed to further enhance the stability of skyrmions [13]. Subsequently, a number of theoretical simulations searching for effective manipulation methods of skyrmions have been performed in order to develop related spintronic devices. It is suggested that skyrmions in bulk and/or thin film systems could be controlled by external stimuli such as electric currents [14], magnetic fields [15] and thermal gradients [16, 17]. As a matter of fact, some of these manipulations have been confirmed in experiments [18], although it is very hard to create and annihilate skyrmions using these methods [19]. Most recently, the dependence of the magnetic orders on uniaxial pressure in MnSi has been investigated experimentally in detail [20, 21]. The wave vector of the helical order at zero h is reoriented from the [111] axis to the stress axis when the uniaxial pressure is applied. More importantly, the T-region of the skyrmion lattice phase can be extensively modulated by the pressure, demonstrating a new manipulation method in this system. Specifically, the extent of the skyrmion lattice phase is strongly enhanced for pressures applied perpendicular to the magnetic field, while is slowly decreased under pressures parallel to the field. So far, the microscopic mechanism for the strain effect is not clear, and urgently deserves to be uncovered in order to understand the physics and even speed up the application process [22]. Fortunately, the earlier spin model has successfully reproduced the ordered phases found in the experiments on bulk MnSi, allowing one to explore the strain effect based on a modified model [12]. Usually, uniaxial pressures may enhance lattice distortion, and in turn modulate exchange anisotropies in a magnetic system [23, 24]. For example, exchange anisotropy has been proven to be very important in the strained manganite thin films [25, 26] and in strained iron pnictides [27, 28]. Furthermore, the DM interaction in chiral magnets along the compressive axis is found to be largely enhanced when a pressure is applied, as revealed in earlier experiments (on FeGe thin films) [24] and first-principles calculations (on Mn1xFexGe) [29]. Thus, it is essential to make clear the role of the interaction anisotropy in modulating the magnetic orders in order to understand the strain effect in chiral magnets. More importantly, such study may provide useful information about the magnetic orders in similar magnets with anisotropic interactions. In this work, we study a classical Heisenberg spin model including anisotropic FM exchange and DM interactions on a three-dimensional lattice by combining variational zero T calculations with Monte Carlo (MC) simulations to understand the strain effect on magnetic orders in bulk MnSi. The experimentally reported reorientation of the wave vector of the helical order and the variation of the extent of skyrmion lattice phase in experimental phase diagrams under uniaxial stress are qualitatively reproduced when the interaction anisotropies are taken into account. Model and methods In this work, the modified spin model is used to describe strained MnSi, and its Hamiltonian is given by: , (1) where Si represents the Heisenberg spin with unit length on site i, , , are the basis vectors of the cubic lattice. The first term is the anisotropic FM exchange interaction between the nearest neighbors with the interaction constant Jμ (μ = x, y, z). The second term is the anisotropic DM interaction with Dμ (μ = x, y, z). The last term is the Zeeman coupling with h applied along the [001] direction. For simplicity, Jx, Jy, the lattice constant, and the Boltzmann constant are set to unity. In this work, the ground states are obtained with an analytical approach, and the finite-T phase diagrams are estimated by MC simulations. It is noted that the system size studied in this work is much larger than that of the skyrmion, and the demagnetization energies which are important in nanostructures [30, 31] can be safely ignored comparing with the DM and FM couplings [32]. In isotropic bulk system under zero h, the ground state is the helical order with the wave vector [8] k = arctan(D/ J) (1, 1, 1) of which the orientation is usually attributed to weak magneto-crystalline anisotropy [33, 34]. Furthermore, uniaxial anisotropy also can efficiently modulate the magnetic states in chiral magnets [35, 36] and other magnetic materials [37, 38], as revealed in earlier works. However, exact solution of the model further considering magneto-crystalline anisotropy is hard to be calculated using the variational method. Thus, such anisotropy is not considered here in order to help one to understand the effect of interaction anisotropy clearly, and our physical conclusions are not affected by this ignorance. Interestingly, when an interaction anisotropy is considered, the ground-state of the system is still a single-k helical order with k = (kx, ky, kz), as will be explained latter. Without loss of generality, we set the rotation axis vector R and initial spin S0, respectively, to be: . (2) Then, the spin vector Si, the energy per site E and effective field fi, respectively, can be calculated by: iiiiiiiiiiiiiiiiSSSSSSSSSSSSSzzzyyxxzzyyxxhzDyDxDJJJH)()(xyz3)sin,sincos,cos(cos)cos,sinsin,cossin(0SR (3) and , (4) . (5) By optimizing for k and (, ), we obtain the following equation set: (6) Here, the last two equations ensure Si  fi = 0, confirming that the single-k helical order is the ground state. Then, we can uncover the ground-state of the system at zero h for determined Dμ and Jμ through energy analysis. In addition, the finite-T phase diagram under various h is also calculated by MC simulations. Following the earlier work [12], a compensation term is considered in the model Hamiltonian to minimize the discretization errors in the simulations, which can be given by: . (7) The simulation is performed on an N = 243 cubic lattice with period boundary conditions using the standard Metropolis algorithm [39] and the parallel tempering algorithm [40]. We take an exchange sampling after every 10 standard MC steps. Typically, the initial 6105 steps 00iSikSRikS)cos()sin()sincossinsinsinsincossin()coscoscos(zzyyxxzzyyxxkDkDkDkJkJkJEiiiiSSSDJHfyyxxyyxxzzzzzyyyxxxkDkDkDkDkDDkJDkJDkJsincossinsinsinsinsinsinsincostansincostansinsintancossintaniiiiiiiiiiiiiiSSSSSSSSSSSS)(81)(161222222zDyDxDJJJHzzyyxxzzyyxxC are discarded for equilibrium consideration and another 6105 steps are retained for statistic averaging of the simulation. Occasional checks were made on a larger lattice of up to 40 to ensure that finite-size effect never affect our conclusion. We analyze the spin structures by making the Fourier transform , (8) and calculating the intensity profile Sk2. Furthermore, we also calculate the longitudinal susceptibility χz, and the uniform chirality χ (9) to estimate the phase transition points [8]. Results and discussion Reorientation of the wave vector of the helix. First, we study the case of the exchange and DM interaction anisotropies with the same magnitude at zero h. Generally, the anisotropy magnitude  and the ratio of the DM interaction to the exchange interaction  are defined by: . (10) Here, Eq. (4) is updated to: . (11) Once the energy expression is minimized, we obtain (the modulus of k and energies E): iikikSSieN1iiiiiiiSSSSSS.)()(81yxyxJDJJzyx,,)sincos)sinsinsin(cossin()cos1cos(coszyxzyxxkkkkkkJE(1) the helical spin state with k = k(0, 0, 1) (12) (2) the helical spin state with k = k(1, 1, 0) (13) (3) the helical spin state with k = (kx, ky, kz) (14) Furthermore, the [xxz] helical state is limited by 0 < φ < π/2 and . (15) It is expected that  increases ( > 1) when a compressive strain is applied along the [110] axis. Interestingly, the [110] helical order will win out over the [111] helical phase for  > , as clearly shown in Fig. 1(a) which gives the calculated energies for a fixed  = 1. Thus, the stress-induced reorientation of the wave vector of the helix reported in experiments ).12(,0for )arctan(2]001[xzJEk).124(,2 ,4for )2arctan(2]110[,xyxJEk).3123(,4 , )12(2)1(2for 322arcsin , )3(1)1(arcsin222][22222222222,xxxzzyxJEkk2211221.5 can be qualitatively reproduced in our anisotropic model. Similarly, the [111] helical order will be reproduced by the [001] one for small  < , related to the case of compressive (tensile) stress applied along the [001] ([110]) axis, in some extent [41, 42]. The calculated ground-state phase diagram in the (, ) parameter plane is shown in Fig. 1(b) which can be divided into three parameter regions with different helical orders. It is noted that the helical propagation direction gradually moves towards the pressure axis ( gradually changes) when the magnitude of the anisotropy is increased, well consistent with experimental observation. Furthermore, the -region with the [xxz] helical order is extensively suppressed as  decreases, demonstrating that the helical order in chiral magnet with a weak DM interaction can be easily modulated by the uniaxial stress [43]. As a matter of fact, these helical spin orders are also confirmed in our MC simulations. For example, the [001] helical order is stabilized at low T for (, ) = (0.866, 0.577), and its spin configuration and the Bragg intensity are shown in Fig. 2(a). In one in-plane (xy) lattice layer, all the spins are parallel with each other. In addition, the spins of the chain along the [001] direction form a spiral structure, clearly demonstrating the helical order with the wave vector k = (0, 0, k). For  < 1 (pressure applied along the [001] axis), the exchange interaction Jz and DM interaction Dz play an essential role in determining the ground-state of the system, and their competition results in the development of the [001] helical order. Thus, the compressive strain will tune the wave vector from the [111] axis to the stress axis, as reported in experiments. Similarly, the [110] helical order (Fig. 2(b)) and the [111] helical order (Fig. 2(c)) can be developed for (, ) = (1.155, 0.816) and (, ) = (1, 1), respectively. Furthermore, these spin orders can be also reflected in the calculated Bragg intensities, as given in the bottom of Fig. 2. On the other hand, it is noted that the magnitude of the exchange anisotropy probably is not the same as that of the DM interaction anisotropy, especially when the spin-orbit coupling of the system is anisotropic [23]. Thus, this case is also investigated for integrity in this work. We define the following two parameters: . (16) 22zzyxyxJDJD ,,, Following the earlier work [23], a constraint is applied, and Eq. (4) is updated to: . (17) Similarly, the phase boundaries can be exactly obtained by comparing these energies of the helical orders, and the calculated ground-state phase diagram in the (γ, γ/ξ) parameter plane is shown in Fig. 3. It is clearly demonstrated that these helical orders can be effectively modulated by these parameters, further strengthening the conclusion that the interaction anisotropy may be important in understanding the uniaxial pressure dependence of ground-state in chiral magnets such as MnSi. Variation of the T-region with the skyrmion lattice phase. With a magnetic field applied along the [001] direction, the skyrmion lattice phase exists in a small h-T region. A transverse (longitudinal) pressure further stabilizes (destabilizes) the skyrmion lattice phase, resulting in the extension (suppression) of the T-region with this phase, as reported in earlier experiments on bulk MnSi [20, 21]. This behavior is also captured in this anisotropic spin model. Fig. 4(a) shows the simulated phase diagram for (α, β) = (1.155, 0.816). Even with the compensation term, the skyrmion lattice phase remains stable at low T, demonstrating the prominent role of the interaction anisotropies in modulating the skyrmion lattice phase. This phenomenon can be understood by analyzing the spin structures. For one spin chain along the z direction in the [110] helical order, all the spins are parallel with each other, and Jz interaction is completely satisfied. Thus, there is no energy loss from the Jz interaction due to the transition from the helical order to the tube skyrmion phase, resulting in the extension of the T-region with the skyrmion lattice phase. In some extent, this behavior is similar to that of the two-dimensional system in which a rather large T-region with the skyrmion lattice phase ）（）（22,11yxzJJ)sincos)1()1(sinsinsincossin()cos)1()1(cos(cos2222zyxzyxxkkkkkkJE has been reported both experimentally [4, 5] and theoretically [44] as a result of the suppression of the competing conical phase. In Fig. 4(b), we show a snapshot (one in-plane lattice layer) of the skyrmion lattice phase and the Bragg intensity at T = 0.07 and h = 0.46. The skyrmion phase of hexagonal symmetry is clearly confirmed. It is noted that the magnitude of the anisotropy may be not so large in real materials, and the skyrmion lattice phase at T  0 predicted here has not been reported experimentally. However, this work indeed manifests the important role of the interaction anisotropy in modulating the skyrmions. On the contrary, the extent of the skyrmion lattice phase is significantly suppressed for α < 1, as shown in Fig. 5 which gives the phase diagram for (α, β) = (0.866, 0.5735). With the increase of Jz (α decreases), the energy loss from the Jz interaction due to the transition to the skyrmion lattice phase increases, resulting in the destabilization of the skyrmion lattice phase. As a matter of fact, earlier experiment revealed that an in-plane tensile strain destabilizes the skyrmion lattice phase [36], consistent with our simulations. Furthermore, it is clearly shown that the helical order is only stabilized at zero h, which can be explained analytically. The spins in an in-plane layer are parallel with each other in the [001] helical order, exhibiting a quasi-one-dimensional property. In this case, the energy of the conical phase under small h can be written by , (18) where ϕ is the cone half-angle (for the [001] helical order, ϕ = /2). Once the energy express is minimized, we obtain . (19) Thus, it is clearly indicated that the [001] helical order can only be develop at zero h. In fact, earlier experiments have revealed that both the helical order and skyrmion lattice phase can be destabilized by the longitudinal pressure [20]. Here, our work suggests that the conical phase coscoscos1cos21sin2conhkJkkDEzzzzzcossin2cos1cos21)cos1(2zzzzkDkkhwill completely replace the helical one under finite h in the system with strong interaction anisotropies. Conclusion In conclusion, we have studied the uniaxial stress effects on the magnetic orders of bulk MnSi based on the spatially anisotropic spin model. Several experimental observations are qualitatively reproduced by the analytical calculation and Monte Carlo simulations of the model. 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Symmetry breaking, slow relaxation dynamics, and topological defects at the field-induced helix reorientation in MnSi. Phys. Rev. B 95, 024429 (2017). 44. Lin, S. Z. & Saxena, A. Noncircular skyrmion and its anisotropic response in thin films of chiral magnets under a tilted magnetic field. Phys. Rev. B 92, 180401(R) (2015). Acknowledgements: This work is supported by the National Key Projects for Basic Research of China (Grant No. 2015CB921202), and the National Key Research Programme of China (Grant No. 2016YFA0300101), and the Natural Science Foundation of China (Grant No. 51332007), and the Science and Technology Planning Project of Guangdong Province (Grant No. 2015B090927006), and Special Funds for Cultivation of Guangdong College Students' Scientific and Technological Innovation (Grant No. pdjh2017b0138). X. Lu also thanks for the support from the project for Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme (2016). Author contributions J.C. and M.H.Q. conceived the research project and J.C. performed the computations. S.D. and J.M.L. discussed the physical mechanism and extension. X.B.L. and X.S.G. provided the technical support. All the authors discussed the results and commented on the manuscript. J.C. and M.H.Q. wrote the paper. Additional information Competing financial interests The authors declare no competing financial interests. FIGURE CAPTIONS Fig.1. (a) The local energies as a function of α. (b) The ground-state phase diagram in the space of (α, β). Fig.2. A plot of the spin configurations projected on the xy plane (up) and projected on the yz plane (middle). At the bottom of each figure are the plots of the Bragg intensity from Fourier transition which shows the sets of helix vectors. The parameters are (a) (α, β) = (0.866, 0.577), (b) (α, β) = (1.155, 0.816), and (c) (α, β) = (1, 1) at T = 0.01. Fig.3. The ground-state phase diagram in the space of (γ, γ/ξ). Fig.4. (a) The estimated phase diagram in the (T, h) plane for (α, β) = (1.155, 0.816), and (b) A plot of the in-plane layer spin configuration for the tube skyrmion phase. The intensity profile is also given in the bottom of (b). Fig.5. The estimated phase diagram in the (T, h) plane for (α, β) = (0.866, 0.577). Fig.1. (a) The local energies as a function of α. (b) The ground-state phase diagram in the space of (α, β). Fig.2. A plot of the spin configurations projected on the xy plane (up) and projected on the yz plane (middle). At the bottom of each figure are the plots of the Bragg intensity from Fourier transition which shows the sets of helix vectors. The parameters are (a) (α, β) = (0.866, 0.577), (b) (α, β) = (1.155, 0.816), and (c) (α, β) = (1, 1) at T = 0.01. Fig.3. The ground-state phase diagram in the space of (γ, γ/ξ). Fig.4. (a) The estimated phase diagram in the (T, h) plane for (α, β) = (1.155, 0.816), and (b) A plot of the in-plane layer spin configuration for the tube skyrmion phase. The intensity profile is also given in the bottom of (b). Fig.5. The estimated phase diagram in the (T, h) plane for (α, β) = (0.866, 0.577).
1904.11057	1	1904	2019-04-24T20:33:26	Valley Anisotropy in Elastic Metamaterials	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	Valley, as a new degree of freedom, raises the valleytronics in fundamental and applied science. The elastic analogs of valley states have been proposed by mimicking the symmetrical structure of either two-dimensional materials or photonic valley crystals. However, the asymmetrical valley construction remains unfulfilled. Here, we present the valley anisotropy by introducing asymmetrical design into elastic metamaterials. The elastic valley metamaterials are composed of bio-inspired hard spirals and soft materials. The anisotropic topological nature of valley is verified by asymmetrical distribution of the Berry curvature. We show the high tunability of the Berry curvature both in magnitude and sign enabled by our anisotropic valley metamaterials. Finally, we demonstrate the creation of valley topological insulators and show topologically protected propagation of transverse elastic waves relying on operating frequency. The proposed topological properties of elastic valley metamaterials pave the way to better understanding the valley topology and to creating a new type of topological insulators enabled by an additional valley degree of freedom.	physics.app-ph	physics	Valley Anisotropy in Elastic Metamaterials Shuaifeng Li1,2, Ingi Kim3, Satoshi Iwamoto3, Jianfeng Zang2, Jinkyu Yang1 1Department of Aeronautics and Astronautics, University of Washington, Seattle, Washington, 98195-2400, USA 2School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China 3Institute of Industrial Science, University of Tokyo, Meguro, Tokyo, 153-8505, Japan Abstract Valley, as a new degree of freedom, raises the valleytronics in fundamental and applied science. The elastic analogs of valley states have been proposed by mimicking the symmetrical structure of either two-dimensional materials or photonic valley crystals. However, the asymmetrical valley construction remains unfulfilled. Here, we present the valley anisotropy by introducing asymmetrical design into elastic metamaterials. The elastic valley metamaterials are composed of bio-inspired hard spirals and soft materials. The anisotropic topological nature of valley is verified by asymmetrical distribution of the Berry curvature. We show the high tunability of the Berry curvature both in magnitude and sign enabled by our anisotropic valley metamaterials. Finally, we demonstrate the creation of valley topological insulators and show topologically protected propagation of transverse elastic waves relying on operating frequency. The proposed topological properties of elastic valley metamaterials pave the way to better understanding the valley topology and to creating a new type of topological insulators enabled by an additional valley degree of freedom. Introduction Elastic waves, possessing plenty of degree of freedoms (DOFs) including frequency, phase and polarization, have demonstrated tremendous promise in a variety of applications including target detection, information processing and biomedical imaging1 -- 4. Recently, topology has been proposed as a new DOF in manipulating waves in both photonic and phononic systems, exhibiting remarkable impact not only on fundamental science such as condensed matter physics, but also on engineering applications such as low loss devices and waveguides5 -- 9. In photonics, the photonic spin Hall effect has been achieved by taking advantage of spin DOF, which opens up an avenue of spin-dependent light transport and one-way spin transport10 -- 13. In phononics, mechanical patterns and deformation have been employed as a new DOF to enable the elastic topological states8,9,14 -- 19. Recently, valley, the degenerate yet inequivalent energy extrema in momentum space, has emerged as a new dimension in manipulating waves in electronics, photonics and phononics5,6,20 -- 24. In graphene and transition metal dichalcogenides, valley-selective circular dichroism and valley Hall effect due to the long lifetime of valley polarization and non-zero Berry curvature have been studied for the promising applications in information carrier and storage20,21,23,24. As the concept of valley is introduced into the classic system, the photonic and phononic valley crystals are proposed, showing potential applications such as information processing via valley-dependent transportation5,6,22. However, existing designs of valley metamaterials are limited to the inherent spatial inversion symmetry of the physical system, where the typical Berry curvature distribution in the Brillouin zone follows Ω−# =Ω# . The valley metamaterials without spatial inversion symmetry have not yet been explored. The introduction of asymmetrical design into valley crystals may add an additional degree of freedom in manipulating waves for waveguiding and information carrying purposes. Here, we propose a new concept of valley anisotropy by introducing asymmetrical architecture into elastic metamaterials. The elastic valley metamaterials are composed of bio-inspired hard spiral scatterers and soft material matrix. The spiral structure ensures the system without spatial inversion symmetry. The valley anisotropy is revealed by the exceptional Berry curvature of this chiral anisotropic system. We show that the Berry curvature can be tuned by adjusting the parameters of spiral scatterers. By leveraging this enhanced design freedom, we demonstrate that our asymmetrical structure design with the integration of both soft and hard materials enables unprecedented topological manipulation of transverse elastic waves, allowing bending and stoppage of energy flow. Such manipulation of transverse waves can be useful in high-resolution imaging, such as trans-skull measurement and treatment in biomedical systems because of their high penetration and high contrast characteristics in human body1,3,25. The elastic valley states, carrying notable features of vortices, may also inspire new appealing applications in engineering. Results Design of elastic valley metamaterials. As illustrated in Fig. 1a, the elastic valley metamaterials are designed in a triangular lattice using the hard spirals as scatterers and the soft hydrogel as a matrix. Hydrogels are chosen as the soft matrix because they are acoustically similar to water and are ideally biocompatible materials26. The hard-spiral structure is inspired by the pattern on seashells. The spiral element is in the low order of symmetry falling into the point group Cs that only contains identity and σxy symmetries, which ensures the asymmetrical elastic valley metamaterial27. As a typical example in the monofilar spiral, Archimedean spiral structure is employed in our design of the unit cell. The key parameters are marked in Fig. 1a and detailed in Methods. Fig. 1b and 1c present the band structure of the first Brillouin zone with the second and the third transverse wave bands separated by an omnidirectional band gap. Different from the Dirac dispersion in lattices with C3v symmetry, the band gap in our spiral system is a result of breaking the symmetry between the lattice and the scatterers, which is guaranteed by the asymmetric spiral structure in our design. The phononic band structure is a typical valley structure, which is similar to the band structure of transition metal dichalcogenides. Because of the chiral structure, we use six symbols from K1 to K6 to present the corners of the Brillouin zone. We illustrate the two bands along the edge of the first Brillouin zone (i.e., from K1 to K6) in Fig. 1c. We find that the both bands between K1 and K2 valleys are different from those between K2 and K3 valleys, and also between K3 and K4. This indicates that there exist three inequivalent valleys in our spiral structure. These three inequivalent valleys suggest the anisotropic band structure of the elastic valleys. We further investigate the elastic valley states of the spiral structure in the eigen displacement field and valley polarizations. We choose p and q of the second and third bands at K1 valley as two representing elastic valley states, as marked in Fig. 1c. Similar with electronic valley states, as well as the photonic and acoustic valley states, elastic valley states also exhibit a notable chirality, as shown in the eigen displacement field of p and q states in Fig. 1d. Fig. 1e illustrates the normalized pseudospin angular momentum density of phonons in p and q states, which is defined as %= &'( )%) 28, where * is the mass density, + is the angular frequency and % is the spin-1 operator. It can be simplified as %= ,-./0(2∗×2), which indicates the rotation of velocity field. The local particle velocity rotates clockwise or counterclockwise driven by the phase difference. For convenience, we define the clockwise and the counterclockwise as pseudospin down and pseudospin up based on the right-hand rule. The pseudospin angular momentum characterizes the polarizations of phonons, e.g., linear, elliptical and circular polarizations. In the analysis of valley polarization, we find p and q state exhibit different polarizations. From Figs. 1d and e, both the amplitudes of displacement and the normalized pseudospin angular momentum reach maximum at the corner of the hexagon, indicating the circular polarizations at the corners. For example, when we investigate the p state, we find that the maximum of displacement field is located at three corners of hexagon. At the same time, the pseudospin angular momentum density mainly concentrates on the same places of the hexagon. Moreover, the negative value suggests that p state is in the pseudospin down state and the local particle velocity rotates clockwise. In stark contrast, q state is in the pseudospin-up state and local particle velocity rotates counterclockwise. It is interesting to note that when the p state exhibits circular (linear or elliptical) polarization at the three corners of hexagon where the q state exhibits linear or elliptical (circular) polarization. The field distribution and normalized pseudospin angular momentum are completely different from the existing valley states in classic systems, where the normalized pseudospin angular momentum reaches maximum at the position where the amplitude of field becomes zero. The comparison of traditional acoustic valley vortex state is shown in supplementary figure 1 and supplementary note 1. The observed anomalous valley states have never been reported in the classic systems, which enrich the intrinsic physics of valley states and inspire the pseudospin source for communication. Deviated Berry curvature of the elastic valley metamaterials. In existing valley physics, opposite Berry curvatures are located at different valleys, resulting in appealing phenomena, such as valley-polarized transport. Whereas, in our elastic valley metamaterials, the observed anisotropic band structure may result in the exceptional topology of valley, which has never been explored. We study the topology of valley by calculating the Berry curvature Ω# = 6∇#×8(#)∇#8(#) and integrate it using the discrete integration method (see Supplementary Note 2)29. For an elastic system with time reversal symmetry, the integration of the Berry curvature of the whole Brillouin zone is expected to be zero. Nevertheless, the Berry curvature is highly localized at the valleys and the local integration of the Berry curvature converges quickly to a nonzero quantized value. The global integration is referred to as the Chern number C, and the local one is called valley Chern number Cv. The valley Chern number is defined as 9:= ;-< Ω(#)=-#, where the integral bounds extend to a local area around the valley. In existing valley physics, the valley Chern numbers were calculated to be ±1/2 in electronic, photonic and phononic systems. Usually, the extrema of the Berry curvature are located at the corners of Brillouin zone. However, the maximum and the minimum values of the Berry curvature in our system are not technically at the corners of Brillouin zone. This discrepancy may be caused by mismatch between the asymmetrical spiral and the triangular lattice. Fig. 2a shows the regular Brillouin zone (Black solid lines) and the area formed by connecting the extrema of the Berry curvature (Red dashed lines). The area is clearly distorted but still has the symmetry around an oblique line (Blue dotted lines). The detailed Berry curvatures around each K valley are presented in Fig. 2b. The Berry curvature of the second band and the third band are enclosed by the cyan and magenta dotted lines, respectively. However, numerical integration of the Berry curvature of our system shows that the anomalous integration numbers are about ±0.34 that are not limited to ±0.5. This may be caused by the strong spatial inversion symmetry breaking9,30. The strong spatial inversion symmetry breaking reflects the distribution of slowness curves and group velocity, which is related to the -(>B:ABC@B)DB, where >=#−#E is the wave vector deviation from @:AB Berry curvature by Ω> =± the corresponding K point24. We also characterize the anisotropy of metamaterials by calculating the slowness curves and group velocity seen in the Supplementary Note 3 and Supplementary Figure 2. The distorted area and three different distributions of the Berry curvature around K1, K2, and K3 valleys clearly show the anisotropic characteristic in the elastic valleys. The observed deviated distribution of the Berry curvature in elastic system may inspire the similar anomalous physics in other systems, such as electronic and photonic systems. The tunability of Berry curvature. The Berry curvature plays an important role in wave motion in metamaterials and other fields in modern condensed matter physics. Thus, it is desirable to have more choices of the Berry curvature. We investigate the tunability of the Berry curvature, as a function of the key parameters of the Archimedean spiral structure, such as the number of turns (n) and the thickness of the spiral (d) as shown in Fig. 1a. For simplicity, we mainly investigate the Berry curvature along K6K1 line. The situation of the second band is shown in Fig. 3a. At n = 1.5 and 2 considered in this study, with the increase of the thickness of the Archimedean spiral, the absolution value of the Berry curvature decreases. It is quite understandable that since the Archimedean spiral approaches a circle with the increase of the thickness, the Berry curvature tends to disappear due to the spatial inversion symmetry. As the thickness of the Archimedean spiral is fixed, the sign of the Berry curvature changes when the number of turns changes from n = 1.5 to n = 2.0, where the peak sign flips, and thus the topological transition happens. The same phenomenon can be observed from Fig. 3b which shows the distributions of the Berry curvature of the third band. Elastic topological valley Hall edge states. We have demonstrated the valley of the anisotropic elastic metamaterials in band structures, the deviated distributions of the Berry curvature, and its tunability. Naturally, the next step is to investigate the elastic topological valley Hall edge states, which is regarded as one of the most significant manifestations of valley-polarized behaviors. According to the result in the previous section, we can tune the value of the Berry curvature around valleys by adjusting number of turns (n) and thickness (d). We use the symbol (n1, d1 n2, d2) for convenience to discuss the combination of different configurations of elastic valley metamaterials. We choose the combination of (1.5, 3) and (2, 2) for the investigation of elastic topological valley Hall edge states due to their overlapped frequency range and opposite Berry curvatures. As shown in Fig. 4a, the projected band along the kx direction is calculated using the sandwich supercell (2, 2 1.5, 3 2, 2). It is evident that there are three bands independent of the bulk shown in gray. The red line represents the edge states located at the interface between (2, 2) and (1.5, 3), while the blue line represents the edge states located at the interface between (1.5, 3) and (2, 2). The projected band structure along the ky direction is displayed in Fig. 4b. Red and blue lines have the same meanings as those in Fig. 4a. However, when checking the eigenmodes of edge bands along the kx and ky directions, we find that as k approaches the origin point from the intersection point, the edge states fade gradually in the first band along the kx direction and in the both bands along the ky direction. Although the displacement field of the first band in Fig. 4a mainly concentrates at the interface, its intensity concentrates on the spiral which looks more like bulk states of spirals, which is nearly non-dispersive. The detailed eigenmodes are shown in supplementary figure 3. This phenomenon of the branch fading is distinct from the common sense of valley topological bands where the robustness of the edge modes remains basically the same as k varies. This can result in several intriguing phenomena of valley edge transport of electrons, photons and phonons. Therefore, the unique transport of elastic waves would be expected in our system when the direction of transport changes from x direction to y direction. Here, we demonstrate a frequency selector using this novel property in our system. Fig. 4c and 4d show the schematics and the simulation models. When the vibration source with 157.6 Hz marked in cyan line in Fig. 4a and 4b, is set at the beginning of the interface between (2, 2) and (1.5, 3), the elastic waves will transport along the interface. However, when the elastic waves arrive at the intersection, they will not go forward but go downward into another interface. The reason is evident: edge modes in different interfaces belong to different valleys and they cannot couple with each other, so the excited edge mode cannot propagate forward. But the downward edge mode and the excited mode are projected by the same valley. Therefore, the elastic waves go downward when they arrive at the intersection17. However, when the excitation frequency is low, the transport of the elastic waves is distinct from the existing cases. Here, we choose 156.7 Hz marked in magenta in Fig. 4a and 4b as the excitation frequency. When the elastic waves arrive at the intersection, they will neither go forward nor bisecting into another interface. From the projected band structure along the kx and ky directions, we know that the edge modes shown in red line in Fig. 4a can be excited. However, when the direction is changed to the ky direction, the edge mode cannot support the energy along the vertical interface (see the eigen displacement field in supplementary figure 3). Therefore, the elastic waves will not travel along the bent interface. The topological state attenuation with wave vector displays the unique wave dynamics, which has never been realized in other systems yet. It may have potential applications in signal processing and frequency selector. Discussion As a conclusion, the valley anisotropy is introduced by asymmetrical elastic metamaterials made of bio-inspired structure and soft material. The observed anomalous valley vortex states enrich the intrinsic physics of the valley states. The deviated Berry curvature in elastic system may inspire similar explorations in other systems, such as electronic and photonic systems. Note that the discussed elastic waves with valley anisotropic characteristics are transverse waves, which opens a new DOF to manipulate the transversal polarized waves. The hydrogel-based transverse wave manipulator can be glued to a variety of media including hard and soft materials due to its strong chemical anchorage effect31. Given its biocompatibility, it would be beneficial to use hydrogel-based devices in contacting with the skin. The novel manipulation of transverse wave has potential applications in biomedical field for elastography and in nondestructive flaw detection such as detecting the defect in metals and composites. Methods Simulations. Numerical simulations are performed by using COMSOL Multiphysics, finite- element analysis and solver software. The simulations are implemented in the 2D solid mechanics module. The system consists of the rigid spiral resonator made of polylactic acid (PLA) and soft hydrogels. The mechanical properties used for spiral PLA are: mass density 1250 kg·m−3, Young's modulus 2.1 GPa and Poisson's ratio 0.36. The geometric parameters of the spiral are defined in Fig. 1a, in which initial spiral radius ai = 1.5 mm, gap distance g = 2.25 mm, thickness of the spiral d = 2 mm and the number of turns n = 2. The mechanical properties of soft hydrogels are mass density 1000 kg·m−3, Young's modulus 18 kPa and Poisson ratio 0.5. The lattice constant is c = 14 3 mm. For calculating the Berry curvature, the first-principle discrete method is used (see Supplementary information). For the calculation of wave propagation in a finite sample, a vibration source is set at the beginning of the interface and the absorption boundary conditions are set around the sample. References: 1. Grasland-Mongrain, P. et al. Imaging of shear waves induced by lorentz force in soft tissues. Phys. Rev. Lett. 113, 038101 (2014). Kochmann, D. M. et al. Stable propagation of mechanical signals in soft media using stored elastic energy. Proc. Natl. Acad. Sci. 113, 9722 -- 9727 (2016). Garra, B. S. Elastography: history, principles, and technique comparison. Abdom. Imaging 40, 680 -- 697 (2015). 2. 3. 4. Mariappan, Y. K., Glaser, K. J. & Ehman, R. L. Magnetic resonance elastography: a review. 5. 6. 7. 8. Clin. Anat. 23, 497 -- 511 (2010). Dong, J.-W., Chen, X.-D., Zhu, H., Wang, Y. & Zhang, X. Valley photonic crystals for control of spin and topology. Nat. Mater. 16, 298 (2016). Chen, X.-D., Deng, W.-M., Lu, J.-C. & Dong, J.-W. Valley-controlled propagation of pseudospin states in bulk metacrystal waveguides. Phys. Rev. B 97, 184201 (2018). He, C. et al. Acoustic topological insulator and robust one-way sound transport. Nat. Phys. 12, 1124 (2016). Liu, T.-W. & Semperlotti, F. Tunable Acoustic Valley-Hall Edge States in Reconfigurable Phononic Elastic Waveguides. Phys. Rev. Appl. 9, 14001 (2018). 9. 10. Zhu, H., Liu, T.-W. & Semperlotti, F. Design and experimental observation of valley-Hall edge states in diatomic-graphene-like elastic waveguides. Phys. Rev. B 97, 174301 (2018). Petersen, J., Volz, J. & Rauschenbeutel, A. Chiral nanophotonic waveguide interface based on spin-orbit interaction of light. Science. 346, 67 -- 71 (2014). 11. Bliokh, K. Y., Smirnova, D. & Nori, F. Quantum spin hall effect of light. Science. 348, 1448 -- 1451 (2015). 12. Lin, J. et al. Polarization-controlled tunable directional coupling of surface plasmon polaritons. Science. 340, 331 -- 334 (2013). 13. Young, A. B. et al. 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Mater. 17, 323 -- 328 (2018). 20. Xu, X., Yao, W., Xiao, D. & Heinz, T. F. Spin and pseudospins in layered transition metal dichalcogenides. Nat. Phys. 10, 343 -- 350 (2014). 21. Rycerz, A., Tworzydło, J. & Beenakker, C. W. J. Valley filter and valley valve in graphene. Nat. Phys. 3, 172 (2007). 22. Lu, J., Qiu, C., Ke, M. & Liu, Z. Valley Vortex States in Sonic Crystals. Phys. Rev. Lett. 116, 093901 (2016). 23. Mak, K. F., McGill, K. L., Park, J. & McEuen, P. L. The valley Hall effect in MoS2 transistors. Science. 344, 1489 -- 1492 (2014). 24. Xiao, D., Yao, W. & Niu, Q. Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport. Phys. Rev. Lett. 99, 236809 (2007). 25. Kweun, J. M., Lee, H. J., Oh, J. H., Seung, H. M. & Kim, Y. Y. Transmodal Fabry-Pérot Resonance: Theory and Realization with Elastic Metamaterials. Phys. Rev. Lett. 118, 205901 (2017). Sun, J.-Y. et al. Highly stretchable and tough hydrogels. Nature 489, 133 -- 136 (2012). Isik, O. & Esselle, K. P. Analysis of spiral metamaterials by use of group theory. Metamaterials 3, 33 -- 43 (2009). 26. 27. 28. Long, Y., Ren, J. & Chen, H. Intrinsic spin of elastic waves. Proc. Natl. Acad. Sci. 115, 29. 9951 -- 9955 (2018). Fukui, T., Hatsugai, Y. & Suzuki, H. Chern Numbers in Discretized Brillouin Zone: Efficient Method of Computing (Spin) Hall Conductances. J. Phys. Soc. Japan 74, 1674 -- 1677 (2005). 30. Kim, I., Arakawa, Y. & Iwamoto, S. Design of GaAs-based valley phononic crystals with multiple complete phononic bandgaps at ultra-high frequency. Appl. Phys. Express 12, 047001 (2019). 31. Yuk, H., Zhang, T., Lin, S., Parada, G. A. & Zhao, X. Tough bonding of hydrogels to diverse non-porous surfaces. Nat. Mater. 15, 190 (2015). Data availability The data sets generated and analyzed during the current study are available from the corresponding authors on reasonable request. Acknowledgements We gratefully thank Prof. Meng Xiao from Wuhan University, Prof. Feng Li from South China University of Technology and Dr. Rajesh Chaunsali from Laboratoire d'Acoustique de I'Universite du Maine for fruitful discussions. S.L. and J.Y. are grateful for the support from NSF (CAREER1553202 and EFRI-1741685). J.Z. are grateful for the support from the National Key Research and Development Program of China (2018YFB1105100) and the National Natural Science Foundation of China (51572096 and 51820105008). I. K. and S. I. are grateful for the support of MEXT KAKENHI Grant Number JP17J09077, JP15H05700, JP17H06138, JP15H05868. Author contributions S.L. did the simulations and wrote the manuscript. I.K. assisted with the calculation of the Berry curvature. S.I., J.Z., and J.Y. supervised this project. All authors were involved in analysis and discussion of the results and the improvement of the manuscript. Additional information Competing financial interests: The authors declare no competing financial interests. Corresponding author: correspondence to Jianfeng Zang and Jinkyu Yang Fig. 1 The design of elastic valley metamaterials. a. Schematics of the elastic valley metamaterial in triangle lattice. The Archimedean spiral-like structure inspired by seashells is employed as the rigid scatterer shown in purple. The soft hydrogel matrix is shown in beige. b. The band structure of the first Brillouin zone with the second band and the third band showing the valley characteristic. The purple lines indicate the first Brillouin zone and the six corners are marked by K1, K2, K3, K4, K5 and K6. c. The band structure along the edge of the first Brillouin zone. The blue (red) curve represents the second (third) band. The two states in the K1 valley denoted as p and q states. d. The displacement field distributions of p and q valley states. e. The normalized pseudospin angular momentum density distributions of p and q valley states. Fig. 2 The Berry curvature near K points of the second band and the third band. a. The black solid lines represent the Brillouin zone and the red dashed lines connect the extrema of the Berry curvature. The blue dotted line represents the symmetrical plane. b. The detailed Berry curvature distribution near the six valleys enclosed by the cyan dotted line (The second band) and magenta dotted line (The third band). The black lines represent the boundaries of Brillouin zone. Fig. 3 The tunability of the Berry curvature. a. The Berry curvature of the second band along K6 K1 line as a function of the thickness of the Archimedean spiral, d = 1, 2, 3 and 4, when the number of turns of the spiral n = 1.5, 2. b. The Berry curvature of the third band along K6 K1 line as a function of the thickness of the Archimedean spiral, d = 1, 2, 3 and 4, when the number of turns of the spiral n = 1.5, 2. Note that there is a broken x axis in each figure to emphasize the change of the Berry curvature in the K points. Fig. 4 The elastic topological valley Hall edge states a. The projected band structure along kx direction with two distinct modes shown in red and blue solid line. The bulk modes are shaded in gray. b. The projected band structure along ky direction with two distinct modes shown in red and blue solid line. The bulk modes are shaded in gray. c. The transport of elastic wave along the interface. At the frequency of 157.6 Hz, which is shown in cyan line in Fig. a and b, the elastic wave can travel along the path and through the bend. d. The transport of elastic wave along the interface. At the frequency of 156.7 Hz, which is shown in magenta line in Fig. a and b, the elastic wave can travel along the x direction but cannot travel through the bend. In schematics of both c and d, the cyan blocks represent (1.5, 3) metamaterials and the magenta blocks represent (2, 2) metamaterials, which indicate the simulation setup below. Supplementary Information Valley Anisotropy in Elastic Metamaterials Shuaifeng Li1,2, Ingi Kim3, Satoshi Iwamoto3, Jianfeng Zang2, Jinkyu Yang1 1Aeronautics and Astronautics, University of Washington, Seattle, Washington, 98195-2400, USA 2School of Optical and Electronic Information and Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China 3Institute of Industrial Science, University of Tokyo, Meguro, Tokyo, 153-8505, Japan Supplementary note 1 Comparison between traditional acoustic valley metamaterials and our metamaterials Here, we use the one of the most widely studied structures that achieve acoustic valley vortex states to make a comparison with our system1 -- 3. We construct the acoustic metamaterial consisting of an equilateral triangular rod in the water with triangular lattice. The equilateral triangular rod is made of steel with !=7670 '(/+, ,-=6010 //, ,0=3230 // and the acoustic parameters for water are !=1000 '(/+ , ,-= 1490 //. The lattice constant is 14 3 * and the side of equilateral triangular rod is 20 **. When the symmetries between the lattice and scatterer match, the Dirac cone is expected to appear at K point. In order to open the Dirac cone, we need to break the spatial inversion symmetry by rotating the steel rod. Here the rotation angle is 10° as shown in the inset of supplementary figure 1. Supplementary figure 1a shows the band structure of this acoustic metamaterial. The Brillouin zone and the high symmetrical points are shown in the inset. Clearly, there is a band gap around 30 kHz, and the band structure shows two extrema at K point, which are denoted as p and q states respectively. To show the valley features, we investigate the eigen pressure field and pseudospin angular momentum density distribution similar to what we have done in our main text. As displayed in supplementary figure 1b, when the eigen pressure fields reach maximum in the corners of hexagon in both p state and q state, the pseudospin angular momentum densities tend to be zero. We also notice that the p state is in the pseudospin up state and the local particle velocity rotates counterclockwise while q state is the opposite. In sharp contrast, in our system, when the eigen fields reach maximum in the corners of the hexagon in both p and q states, the amplitudes of pseudospin angular momentum densities also tend to be maximum. Supplementary note 2 Calculation of Berry curvature After obtaining the dispersion relation ω = ω(k) and displacement vector field U(k) through finite element method (FEM), we calculate the Berry curvature by numerical method4. For our two-dimensional system, we consider a clockwise path around a certain point A (kx, ky) consisting of A1 (kx-δkx/2, ky-δky /2), A2 (kx-δkx/2, ky+δky /2), A3 (kx+δkx/2, ky+δky /2) and A4 (kx+δkx/2, ky-δky/2). According to the definition and Stokes' theorem, we obtain Ω678=− :⋅68 , where B is the Berry potential of a state defined by <=>∇>=> . ΩA =Im DEF DE7 + DE7 DE+ + DE+ DEH + DEH DEF valley Chern number Cv of the nth band and it is defined as MN= F7O Ω(8)678. where the inner product can be calculated in Comsol. Then, we can map the Berry curvature of the Brillion zone shown in Fig. 2. Further, the local integral is often referred to as the Since we consider the continuous Brillouin zone as numerous small patches, for each patch δkx×δky, we estimate the Berry curvature as below: δ'J×δ'L Supplementary note 3 The anisotropy of elastic valley metamaterials To better understand the anisotropic nature of the elastic valley metamaterials, we further calculate the slowness curves and group velocity distribution. The slowness curves and group velocities are evaluated as a function of the wave vectors. Supplementary Figure. 2a and 2b present the polar plots of the slowness curves of the second band and the third band, showing the distribution of slowness magnitude for different directions in the first Brillouin zone. The slowness curves corresponding to the second and third band are approximately circular at small wave vectors. Interestingly, the slowness curves exhibit the evident anisotropy as wave vectors increase. As wave vectors increase, the values of the slowness of the second band and the third band rise, which is consistent with the corresponding band structures in Fig. 1b. As the wave vector approaches the edges of the first Brillouin zone, the slopes of the corresponding bands decrease. It is noted that the slowness curves are symmetrical around the central point, which agrees with the band structures in Fig. 1c. The calculated group velocity distribution of the second and the third band are presented in Supplementary Figure. 2c and 2d, respectively. It can be found that the group velocity patterns of both bands are quite complex, especially at the corners of the Brillouin zone. There is a single point with nearly zero group velocity around each K point. The group velocity distribution of both bands as a function of wave vectors is symmetrical around the center of the Brillouin zone, suggesting the chiral anisotropic structure of the elastic valley metamaterials, which is correspondence of the slowness curves Supplementary Figure 1 The comparison of traditional acoustic valley metamaterials. a. The band structure along Γ-M-K-Γ of the acoustic valley metamaterial for comparison. The blue, red and gray curves represent the first, second and third band, respectively. b. The amplitude distributions of pressure fields of p and q states. c. The normalized pseudospin angular momentum density of p and q states. Supplementary Figure 2 The chiral anisotropy characteristics of the elastic valley metamaterials. a. The slowness curves of the second band. From the small wave vectors to large wave vectors, the slowness rises from 0.12 to 0.28. b. The slowness curves of the third band. From the small wave vectors to large wave vectors, the slowness rises from 0.02 to 0.18. c. The group velocity distribution of the second band. The black solid line indicates the Brillouin zone. d. The group velocity distribution of the third band. The black solid line indicates the Brillouin zone. Supplementary Figure 3 The projected band structures and eigenmodes. a. The projected band structures along the kx (left panel) and ky (right panel) directions. Several markers with different colors are shown in the topological band. For the projected band structure along the kx direction, markers are placed on each topological band at kx = 0.26 and kx = 0.6. For the projected band structure along the ky direction, markers are placed on each topological band at ky = 0.3 and ky = 0.6. b. The eigen displacement fields corresponding to the markers indicated. The setup of sandwich supercell is shown by the notation we mention in the main text and the arrows indicate the positions of interfaces. References: 1. 2. 3. 4. Lu, J., Qiu, C., Ke, M. & Liu, Z. Valley Vortex States in Sonic Crystals. Phys. Rev. Lett. 116, 093901 (2016). Ye, L. et al. Observation of acoustic valley vortex states and valley-chirality locked beam splitting. Phys. Rev. B 95, 174106 (2017). Lu, J. et al. Observation of topological valley transport of sound in sonic crystals. Nat. Phys. 13, 369 -- 374 (2017). Fukui, T., Hatsugai, Y. & Suzuki, H. Chern Numbers in Discretized Brillouin Zone: Efficient Method of Computing (Spin) Hall Conductances. J. Phys. Soc. Japan 74, 1674 -- 1677 (2005).
1812.04028	1	1812	2018-12-10T19:04:51	Tight-binding terahertz plasmons in chemical vapor deposited graphene	[ "physics.app-ph", "cond-mat.mes-hall" ]	Transistor structures comprising graphene and sub-wavelength metal gratings hold a great promise for plasmon-enhanced terahertz detection. Despite considerable theoretical effort, little experimental evidence for terahertz plasmons in such structures was found so far. Here, we report an experimental study of plasmons in graphene-insulator-grating structures using Fourier transform spectroscopy in 5-10 THz range. The plasmon resonance is clearly visible above the Drude absorption background even in chemical vapor deposited (CVD) graphene with low carrier mobility $\sim 10^3$ cm$^2$/(V s). We argue that plasmon lifetime is weakly sensistive to scattering by grain boundaries and macoscopic defects which limits the mobility of CVD samples. Upon placing the grating in close proximity to graphene, the plasmon field becomes tightly bound below the metal stripes, while the resonant frequency is determined by the stripe width but not by grating period. Our results open the prospects of large-area commercially available graphene for resonant terahertz detectors.	physics.app-ph	physics	Tight-binding terahertz plasmons in chemical vapor deposited graphene Andrey Bylinkin,1 Elena Titova,1 Vitaly Mikheev,1 Elena Zhukova,1 Sergey Zhukov,1 Mikhail Belyanchikov,1 Mikhail Kashchenko,1 Andrey Miakonkikh,2 and Dmitry Svintsov1 1)Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia 2)Valiev Institute of Physics and Technology of Russian Academy of Sciences, Moscow 117218, Russia Transistor structures comprising graphene and sub-wavelength metal gratings hold a great promise for plasmon-enhanced terahertz detection. Despite considerable theoretical effort, little experimental evidence for terahertz plasmons in such structures was found so far. Here, we report an experimental study of plasmons in graphene-insulator-grating structures using Fourier transform spectroscopy in 5-10 THz range. The plasmon resonance is clearly visible above the Drude absorption background even in chemical vapor deposited (CVD) graphene with low carrier mobility ∼ 103 cm2/(V s). We argue that plasmon lifetime is weakly sensistive to scattering by grain boundaries and macoscopic defects which limits the mobility of CVD samples. Upon placing the grating in close proximity to graphene, the plasmon field becomes tightly bound below the metal stripes, while the resonant frequency is determined by the stripe width but not by grating period. Our results open the prospects of large-area commercially available graphene for resonant terahertz detectors. Graphene-based optoelectronic devices benefit from high-speed operation1,2, broadband response3, and com- patibility with on-chip optical interconnects4. Their ma- jor drawback is low electromagnetic wave absorbance by a single sheet of graphene. This problem is readily re- solved via coupling of incident light to plasmons bound either to adjacent metal nanoparticles5,6 or to graphene itself7. Unlike plasmons in metals, intrinsic graphene plasmons offer ultra-strong field confinement8 and tun- ing of resonant frequency with gate voltage9,10. Resonant excitation of plasmons in graphene-based photodetectors becomes increasingly difficult when go- ing from infrared to terahertz (THz) range11 as the plas- mon quality factor scales linearly with frequency. Despite considerable effort12 -- 14 evidence of plasmon-assisted THz detection in graphene are scarce and were reported only for high-quality encapsulated graphene15 or epitaxial graphene on SiC16. Experimental demonstrations of ter- ahertz plasmons in absorbance spectra of graphene, in- cluding scalable chemical vapor deposited (CVD) sam- ples, are more numerous17 -- 19. At the same time, most such experiments dealt with ribbon-patterned where col- lection of photocurrent is hindered and boundary scat- tering is enhanced. In this paper, we study the plasmonic properties of a basic building block of graphene-based terahertz detec- tor13,20, the CVD graphene-channel field-effect transistor with a grating gate. We find that plasmonic contribution to absorption spectra is pronounced at 5 − 10 THz fre- quencies despite moderate carrier mobility ∼ 103 cm2/V s and short momentum relaxation time τp ∼ 50 fs. We further argue that plasmon lifetime in CVD-graphene (as it enters the quality factor) exceeds the relaxation time as extracted from mobility, in contrast to reports for en- capsulated graphene. We find that metal grating placed in immediate vicinity to graphene modifies the resonant plasmon frequencies. In particular, the reciprocal wave vector of the grating no more determines the discrete frequencies of plasmons (contrary to the pioneering stud- ies21 -- 24). Instead, the length of metal fingers plays the 1 m FIG. 1. Schematic view of graphene-based transistor with sub-wavelength grating for launching of THz plasmons. Gate voltage applied between source and Si substrate controls the carrier density. Inset: SEM image of metal grating of device #3 role of plasmon "quantization length", and the plasmon field is tightly bound below the metal gratings. Our devices schematically shown in Fig. 1 were made of commercially available CVD graphene (Graphene Su- permarket). Large-area (∼ 5 × 5 mm) graphene films were wet-transferred on oxidized silicon substrates using the established techniques25. The resistivity of Si sub- strate, ∼ 10 − 20 Ohm·cm, was low enough to achieve efficient gating of graphene, but still large enough to en- sure transparency to the incident THz radiation, ∼ 40 % in the frequency range 50 -- 650 cm−1. The top di- electric layers were made from CVD hexagonal boron nitride (hBN) or atomic layer-deposited Al2O3. Use of dielectrics with different permittivity and thickness en- abled us to demonstrate plasmon resonance across the whole 5 − 10 THz range. Atop the dielectric layer, we . ) . u a ( y t i s n e n t I i i n o s s m s n a r T 322 320 318 316 314 312 310 308 306 700 600 500 400 300 200 p-type CNP n-type -30 -20 -10 0 10 20 30 Gate Voltage, Vg (V) ) S m ( , y t i v i t c u d n o C FIG. 2. Spectrally-integrated transmission intensity and two- terminal graphene conductivity vs gate voltage for device # 1. Anti-correlation between transmission and conductivity confirms that gate-dependent part of absorption is due to graphene fabricated deep-subwavelength metal gratings [shown in 1, inset] with fixed period l = 500 nm and different fill- ing factors. The grating generates evanescent fields with large in-plane wave vectors and launches of graphene plasmons. The structural parameters of devices are sum- marized in Table I. The gate-controlled THz transmission spectra were measured using Fourier spectrometer Bruker Vertex 80v with mercury lamp as a source and silicon bolometer as a detector. Simultaneously with THz measurements, we controlled the two-terminal dc conductivity of the devices using with Keithley 2612B source-meter. The spectrally- averaged intensity of transmitted radiation [shown with grey dots in Fig. 2] demonstrates a pronounced anti- correlation with channel conductivity. This proves that gate-dependent part of spectra is governed by graphene channel but not by, e.g., inversion layer of Si substrate. conductivity shown in Fig. 2 enable the estimate of field-effect mobil- ity µ. To exclude the contribution of contact resistance Rcont, we have fitted the R(Vg) dependence as Measurements of gate-controlled dc R(Vg) = Rcont + L/W µCVg − Vcnp , (1) where is the resistance of graphene channel of length L and width W , C is the gate-to-channel capacitance, Vg is the gate voltage and Vcnp is the voltage correspond- ing to charge neutrality point. The extracted mobility was in the range (1.0 − 1.5) × 103 cm2/ V s, typical for wet-transferred CVD graphene26. This value translates into carrier momentum relaxation time τdc = εF µ/ev2 0 in the range 20 − 50 fs (εF is the gate-controlled Fermi energy and v0 = 106 m/s is the Fermi velocity). Such short relaxation time precludes the emergence of tera- 2 TABLE I. Grating parameters of studied devices. w is the metal stripe width, l is the grating period, d is the insulator thickness Sample # 1 2 3 w, nm 170 170 300 l, nm 500 500 500 d, nm Insulator 11 6 14 Al2O3 Al2O3 hBN hertz plasmon resonance which we nonetheless attempted to observe. Extraction of plasmonic contribution to the terahertz absorption is a non-trivial task due to residual free-carrier (Drude) absorption in Si substrate and graphene itself. The substrate contribution is eliminated by dividing the transmitted spectrum T (Vg) by the one recorded at the charge neutrality point, T (Vcnp). The normalized spec- tra, T (Vg)/T (Vcnp), carry essentially different informa- tion depending on the polarization of probe light16. Light with E-field parallel to metal gratings cannot ef- ficiently generate evanescent waves, and the normalized transmittance is almost the same as of uniform graphene film with conductivity σ(Vg) on a substrate with refrac- tive index nSi: (cid:20) T (Vg) T (Vcnp)(cid:21)k ≈ 1 − 8π/c 1 + nSi [σ(Vg) − σ(Vcnp)]. (2) The absorption spectra measured in such polarization, [T (Vg)/T (Vcnp)]k are shown in Figs. 3(a) and 3(b) for hole and electron doping, respectively. In accordance with the above, they possess no resonant features and fol- low the smooth trend of frequency-dependent graphene conductivity (see the discussion below). Light with E-field transverse to metal gratings is strongly converted to near field with large in-plane wave vector and couples to plasmons. As a result, the spectra recorded in transverse polarization [shown in 3(c-d)] pos- sess an additional feature with maximum shifting toward higher frequencies with increasing carrier density. Fur- ther quantitative analysis confirms its plasmonic origin. Already the quantitative analysis of absorption in "parallel" polarization provides valuable information about high-frequency transport properties of graphene, complementary to the information from dc measure- ments. In particular, fitting of these spectra with Drude model enables simultaneous determination of carrier den- sity and scattering rates. With account of both electrons and holes in graphene, the Drude conductivity takes on the form σ(Vg) = e2 π iεF (Vg)/ ω + iγ , (3) where γ is the carrier scattering rate. The outcome of the fitting procedure is shown in Figure 4. Its most remarkable feature is that scatter- ing rate extracted from optical measurements, γopt, is (a) (b) 8 6 4 2 0 10 8 6 4 2 0 6 4 2 0 ) % ( P N C T / T (c) ) % ( P N C T / T (e) % ) ( ) P N C T / T ( / P N C T / T polarization V=Vg-VCNP step 10 V -160 V -10 V p-type 50 100 150 200 250 Frequency, 300 ( m-1) 350 400 450 polarization ) % ( P N C T / T (d) ) % ( p-type P N C T / T 50 100 150 200 250 Frequency, 300 ( m-1) 350 400 450 / p-type 50 100 150 200 250 Frequency, 300 ( m-1) 350 400 450 (f) % ) ( ) P N C T / T ( / P N C T / T 3 polarization V=Vg-VCNP step 10 V Absorption in beamsplitter 10 V 140 V n-type 50 100 150 200 250 Frequency, 300 ( m-1) 350 400 450 polarization n-type 50 100 150 200 250 Frequency, 300 ( m-1) 350 400 450 / n-type 3 2 1 0 3 2 1 0 2 1 0 50 100 150 200 250 Frequency, 300 ( m-1) 350 400 450 FIG. 3. Transmission spectra of graphene-based transistor with metal grating measured at two mutually orthogonal polariza- tions and different gate voltages. Left column corresponds to hole doping, right column -- to electron doping. Top line: E-field polarized along the gratings; middle line: E-field polarized transverse to the gratings. Bottom line: plasmonic contribution to absorbance obtained by dividing the 'transverse spectra' by 'parallel' ones. well below the scattering rate estimated from mobility, γdc = ev2 0/(µεF). While being unexpected for uni- form samples, the difference between these quantities can be explained with account of the poly-crystaline struc- ture of CVD-grown samples that represent a network of randomly-oriented grains with average size lgrain ∼ 5 µm. In dc measurements, one determines the net resistance of poly-crystaline network, and the value of resistance is limited by worst conducting elements. In optical mea- surements, the conductivities of individual parts of sam- ple are summed up, and the poorly conducting parts do not contribute much to the net absorbance27. We can further argue that Q-factor of plasmons is determined by optical scattering rate, as both the plasmon wavelength (λpl ∼ 500 nm) and free path are below the size of the grain. The spectra recorded in transverse polarization, [T (Vg)/T (Vcnp)]⊥, possess extra absorption peaks above the smooth Drude background. Their quantitative analy- sis is most conveniently performed after division of 'trans- verse' and 'parallel' transmittances. After such proce- dure, the Drude contribution is largely removed. Fitting the normalized spectra with damped oscillator model Im(cid:2)−ω/(cid:0)ω(ω + iγ) − Ω2(cid:1)(cid:3), we determined the resonant frequency Ω17. The density dependence Ω ∝ n1/4 (inset in Fig. 5) completes the proof that the feature is associ- ated with graphene plasmon9. The values of scattering rate from damped oscillator model fit closely matched the scattering rate from Drude absorption, which fur- ther confirms that plasmon damping is weakly sensitive to grain boundaries and macroscopic defects. The density dependence of plasmon resonance in graphene Ω ∝ n1/4 is universal and independent of struc- ture geometry9. Practical design of plasmonic THz de- tectors requires, however, the knowledge of relation be- tween resonant frequency and structural parameters of It has been long assumed21 -- 24 that reso- the devices. nant frequencies Ωn of grating-coupled plasmons in 2d electron systems (2DES) are the frequencies of ungated plasmons ωu(q) evaluated at reciprocal grating wave vec- tors q = Gn = 2πn/l. It implies that grating does not perturb the plasmon spectra of continuous 2DES, it only provides extra in-plane wave vector Gn to the diffracted light. For massless carriers in graphene, these frequencies ) V e m ( F , y g r e n E i m r e F 300 280 260 240 220 200 180 160 140 120 opt -30 -20 dc CNP -10 10 Gate Voltage, Vg (V) 0 20 30 60 50 40 30 20 10 ) 1 - s 2 1 0 1 ( , t e a R g n i r e t t a c S ) 1 - m c ( , y c n e u q e r F e c n a n o s e R 400 350 300 250 200 150 100 50 0 Experiment & Theory Device 1 Device 2 Device 3 & & & ) 1 - 4 Ungated plasmons 250 200 m c ( 1.8 2.0 2.2 2.4 50 100 200 150 250 Fermi Energy, F (meV) Vg 1/4 (V1/4) 300 350 FIG. 4. Transport properties of graphene samples deduced from optical absorption data: Fermi energy vs gate voltage (black) and scattering rate (blue) for device # 2. Non-zero εF at the charge neutrality point is due to impurity-induced fluc- tuations; its magnitude was estimated with theory of Ref. 28 FIG. 5. Extracted resonant frequencies of plasmons (dots) compared with tight-binding theory [Eq. 6] for three samples. The lower and upper groups of points for sample # 3 corre- spond to electron and hole doping, respectively. The black dashed line is the spectrum of ungated plasmons evaluated at reciprocal grating wave vector Gn=1 = 2π/l. Inset: gate voltage dependence of resonant frequency Ω ∝ Vg − Vcnp1/4 would be given by9 Ωn = ωu(Gn) = v0p2αcGnkF , currents30 (4) where αc = e2/ǫv0 is the Coulomb coupling constant, and kF = εF /v0 is the Fermi wave vector. The inconsistency of the "canonical" picture with our data is apparent from Fig. 5. The measured resonant frequencies for all samples lie below the frequency of un- gated plasmon ωu(Gn=1). Moreover, samples with differ- ent metal filling factor f = w/l and equal grating period have essentially different resonant frequencies, the sam- ple with smallest f having the highest frequency. This fact is not captured by the existing theory (4). The main assumption of the previously accepted the- ories is weak coupling between grating and 2d plasmons. The coupling strength of the n-th mode is characterized by the quantity e−Gnd which is nothing but attenuation of n-th evanescent diffracted field at distance d from the grating. In our devices, the coupling strength is order of unity, and assumptions of weak-coupling approach are not fulfilled. More generally, they would not be fulfilled in any sensitive plasmonic THz detector, because efficient conversion of light into plasmons requires weak attenua- tion of near-field harmonics. We now present a simple quantitative model to esti- mate the resonant frequencies that is justified by electro- magnetic modelling29 and common sense, but its strict derivation is still missing. We model grating-coupled graphene as a sequence of ungated and gated regions with plasmon dispersions ωu(q) and ωg(q). The reflec- tion coefficient from gated/ungated line boundary rg/u can be estimated be matching the electric potentials and rg/u = 1 − 2qgd 1 + 2qgd ≈ 1 − 4π d w . (5) The latter equation implies that reflection of plasmon from gated/ungated boundary is almost perfect, up to the small corrections ∼ d/w31. Nearly perfect reflection can be also interpreted with Fresnel's relation between reflection and phase velocities in adjacent media. The considered situation is analogous to the tight- binding model of solids where band electrons are localized near individual atoms and hopping amplitudes are small. Here, the electric field of plasmon is concentrated below each individual metal stripe, and the probability of hop- ping to the neighbouring stripes is order of d/w. The length of metal therefore determines the discrete wave vectors of observed plasmons qn = πn/w, while their dispersion is that of gated plasmon. As a result, the res- onant frequencies should obey Ωn = ωg(qn) = v0 πn w p4αckF d. (6) Without any fitting parameters, the predicted 'tight- binding' frequencies are close to those observed exper- imentally, as shown in Fig. 5. In accordance with our model, reduction of filling factor while keeping the full pe- riod constant raises the resonant frequency, as observed for devices #2 and #3. Reduction in dielectric thickness leads to enhanced screening of Coulomb interaction and softening of plasmon modes, as seen from comparison of curves #1 and #2. Full test of the plasmon tight-binding model in grating- coupled graphene would require the observation of highest-order modes (n > 1) in the transmission spec- tra. In the current setup, these effects are masked by plasmon hybridization with polar phonons in SiO2 and hBN. Reduction of resonant frequency may resolve the situation, but would require samples of higher electronic quality. The tight-binding character of plasmons in 2d systems placed in close proximity to gratings may have strong im- plications on design of resonant detectors. The fact that electric fields are concentrated below individual metal fingers implies the secondary role of grating periodicity for excitation of plasmons. They may be resonantly ex- cited in aperiodic and even disordered gratings with fixed quantization length without appreciable broadening of resonant line. In conclusion, we have studied the properties of plas- mons in large-scale chemical vapor deposited graphene with sub-wavelength metal grating. Possibility of THz plasmon excitation despite moderate carrier mobility shows the prospect of this structure as a voltage-tunable radiation detector. We have shown that the quality factor of plasmons is determined by single-grain optical mobil- ity but not by dc mobility that is reduced due to macro- scopic cracks and grain boundaries. For the practically important device design with grating in a close proximity to graphene, the resonant frequencies of plasmons are de- termined by the length of metal grating elements, while the electric fields are tightly bound to individual metal gratings. The work was supported by the grant # 16-19-10557 of the Russian Science Foundation. Samples were fab- ricated using the equipment of MIPT Shared Facilities Center with financial support from the Ministry of Edu- cation and Science of the Russian Federation (Grant No. RFMEFI59417X0014). The authors are grateful to V. Kaydashev, E. Korostylev, M. Zhuk and G. Fedorov for assistance. 1F. Koppens, T. Mueller, P. Avouris, A. Ferrari, M. Vitiello, and M. Polini, Nat. Nanotechnol. 9, 780 (2014). 2F. Xia, T. Mueller, Y. Lin, A. Valdes-Garcia, and P. Avouris, Nat. Nanotechnol. 4, 839 (2009). 3Y. Zhang, T. Liu, B. Meng, X. Li, G. Liang, X. Hu, and Q. J. Wang, Nat. Commun. 4, 1811 (2013). 4X. Gan, R.-J. Shiue, Y. Gao, I. Meric, T. F. 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1812.09831	1	1812	2018-12-24T04:59:34	Characterization of X-ray charge neutralizer using carbon-nanotube field emitter	[ "physics.app-ph", "physics.ins-det" ]	An X-ray charge neutralizer using a screen-printed carbon-nanotube field emitter is demonstrated to show the possibility of a large-area flat-panel charge neutralizer, although the device dimensions in the present work are not very large. The X-ray yields and spectra are characterized to estimate the ion generation rate as one of the figures of merit of neutralizers. Charge neutralization characteristics are measured and show good performance.	physics.app-ph	physics	Characterization of X-ray charge neutralizer using carbon-nanotube field emitter Shuhei Okawaki, Satoshi Abo, Fujio Wakaya,a) Hayato Yamashita, Masayuki Abe, and Mikio Takai Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 Japan (Dated: Dec. 9, 2015 submitted to Jpn. J. Appl. Phys; revised on March 31, 2016) An X-ray charge neutralizer using a screen-printed carbon-nanotube field emitter is demonstrated to show the possibility of a large-area flat-panel charge neutralizer, although the device dimensions in the present work are not very large. The X-ray yields and spectra are characterized to estimate the ion generation rate as one of the figures of merit of neutralizers. Charge neutralization characteristics are measured and show good performance. Journal reference: Jpn. J. Appl. Phys. 55, 06GF10 (2016) DOI: 10.7567/JJAP.55.06GF10 I. INTRODUCTION It is widely known that static electricity causes troubles not only in high-tech industries but also in many fields in- cluding the manufacture of plastic, rubber, powder, and pa- per, and industries of textile, spinning, and printing, meaning that the management of static electricity has been important in many industries for a long time.1,2 In the ULSI industry, the device dimensions become continuously small3, leading to a more fragile device against static electricity. In the indus- try of flat-panel displays, the screen size and pixel dimension become continuously large and small, respectively, meaning that the product becomes more sensitive to particle contami- nations caused by static electricity. These outstanding trends in high-tech industries suggest that the management of static electricity becomes more critical presently. Although material modification by antistatic additive dop- ing or surface coating is effective for overcoming static elec- tricity problems1, such a technique cannot always be adopted because, especially for electronic devices, an insulating mate- rial is necessary in many cases for realizing device functions. Charge neutralizers using air molecules ionized by corona dis- charge or soft X-ray irradiation are, therefore, often used for solving static electricity problems.1,2,4 -- 8 Corona-discharge-type charge neutralizers have the follow- ing disadvantages, although they are widely used:2 (1) the charge balance of ionized air is not good, (2) the discharge process generates particles and causes contamination prob- lems, (3) the density of ionized air is low on the target material surface, although it is high around the discharge electrodes, (4) the discharge process generates electromagnetic noise that may cause troubles in the target devices to be neutralized. The X-ray charge neutralizer has advantages concerning all the above problems. Particularly when the X-ray source is shaped to a large-area flat panel, it should be useful for present large- area flat-panel devices because of the uniform ion density over a large area. A carbon nanotube (CNT) is one of the promising materials for electron field emitters owing to its high aspect ratio, high a)Corresponding author: [email protected] current tolerance, high mechanical strength, and high chemi- cal stability.9 -- 11. Many applications using CNTs as field emit- ters, such as a field emission display,12,13 a backlight unit for a liquid crystal display,14,15 and an X-ray source,16 -- 18 are re- ported. A screen-printed CNT mat with appropriate post sur- face treatments is one of the best candidates for realizing a large-area field emitter19 -- 29 and can be applied to a large-area X-ray source18,30. Although the X-ray generated at the large- area source may not be very suitable for high-resolution X-ray imaging, it should be useful for realizing a large-area X-ray charge neutralizer for large-area flat-panel devices. In this study, an X-ray charge neutralizer using a screen- printed CNT cathode is demonstrated. Characterization re- sults show good performance for a charge neutralizer. II. EXPERIMENTAL METHODS To apply electron field emitters to an X-ray source, a three- terminal configuration with emitters, gate electrodes, and an anode is necessary; such a configuration enables us to control separately the anode current from the anode voltage, leading to the separate control of the X-ray intensity and X-ray en- ergy. An in-plane side-gate structure is adopted in the present work because it is easily applied to a large-area flat-panel emitter. The fabrication process for the emitter, which was al- ready reported,28 -- 30 is summarized as below. Indium-tin-oxide (ITO) electrodes of 30 × 1 mm2, some of which were used as side-gate electrodes and others as back electrodes for CNT cathodes, were deposited on a glass substrate. A CNT paste was screen-printed on a part of the ITO electrodes with an area of 10×1 mm2. The gap between the edges of the CNT cathode and side-gate electrode is 100 µm. The schematic top view of the cathode is shown in Fig. 1. The effective area of the cath- ode, which is ∼4 × 10 mm2, is not very large but it can easily be enlarged because screen printing can easily be applied to a large-area process. The tape-peeling surface treatment was performed to improve the electron emission property.26,27 The experimental setup used to generate and detect X-rays is schematically shown in Fig. 2. In a vacuum of ∼ 10−5 Pa, a 10-µm-thick Cu thin film, placed 8 cm away from the emitter, was irradiated by field-emitted electrons from the CNT cath- ode typically at 10 keV to generate X-rays. To characterize 8 1 0 2 c e D 4 2 ] h p - p p a . s c i s y h p [ 1 v 1 3 8 9 0 . 2 1 8 1 : v i X r a 2 FIG. 1. (Color online) Schematic top view of screen-printed CNT cathode with side-gate electrodes. The bias setup for extracting elec- trons is also shown. the X-ray spectrum and yield in vacuum, the X-ray detector was set 4 cm away from the Cu film as shown in Fig. 2(a). To characterize X-rays in air, a 250-µm-thick Be window was used and the X-ray detector was set in air 5 cm away from the Be window shown in Fig. 2(b). The X-ray detection system used is Amptek XR-100CR/PX4 with a detector area of 13 mm2. Ion current was measured in air by a metal plate of 40 × 40 mm2, placed 5 cm away from the Be window instead of the X- ray detector shown in Fig. 2(b). The bias voltage of the plate was kept constant at −1 kV during the measurement. This is not exactly the same as the real neutralization situation, be- cause the voltage of the object material decreases during the real neutralization process. Such a technique, however, is of- ten used for characterizing charge neutralizers.2 Charge neu- tralization performance as a function of time was character- ized by using the charged plate monitor shown schematically in Fig. 3 placed in air 5 cm away from the Be window. The area and capacitance of the charged plate monitor are 25 × 25 mm2 and 25 pF, respectively. The current Igr defined in Fig. 3 was measured as a function of time t, since the high-voltage source was disconnected from the circuit. The electric poten- tial of the charged plate, Vcp, can be estimated as (cid:90) t 0 Vcp(t) = Vcp(0) − 1 C Igr dt , (1) with Vcp(0) = 5 kV and C = 25 pF. The direct measurement of Vcp is difficult because the ion current and Igr are typically 10−9 A at the electric potential of 103 V as discussed in the fol- lowing section, which means that a voltmeter input impedance of more than 1012 Ω is necessary. This is the reason why the estimation using Eq. (1) is adopted in this work. III. RESULTS AND DISCUSSION The anode current of the CNT cathode with side-gate elec- trodes was controlled by the side-gate voltage and reached the FIG. 2. (Color online) Experimental setup for generating and detect- ing X-rays. The X-ray detector is placed in vacuum (a) or in air (b). highest value of 300 µA. The detailed field-emission proper- ties were similar to those observed in the previous work30. Figure 4 shows the X-ray spectra obtained in vacuum, the setup for which is shown in Fig. 2(a). The anode current dur- ing the measurement was reduced and kept at 1 nA, although it can be increased up to 300 µA as described previously, be- cause the X-ray spectrum cannot be measured if it is very strong. The characteristic X-ray peaks of Cu were observed when the anode voltage was 10 kV. For all anode voltages, the maximum energy of the bremsstrahlung X-ray corresponded to the anode voltage as expected. The X-ray spectra obtained in air are shown in Fig. 5. When the spectrum was measured in air, the X-ray was absorbed by air and its intensity decreased. The anode current was, there- fore, increased to 400 nA, while the other parameters were maintained the same as in the in-vacuum measurement shown in Fig. 4. The maximum energies of the bremsstrahlung X- glass substrateITO electrodescreen-printed CNTside-gate voltage10 mm1 mmanode voltageelectronX-ray10-5 PaCu4 cm8 cmX-ray detector(a)anode voltageelectronX-ray10-5 PaCu13 cm8 cmX-ray detectorBeairX-ray(b)5 cm3 FIG. 3. (Color online) Schematic of charged plate monitor with mea- surement setup. FIG. 5. (Color online) Energy spectra of X-ray measured in air as in Fig. 2(b). The channel width ∆E of the multichannel analyzer is 89.9 eV. The anode current is fixed to 400 nA during the measurement. The measurement time for each spectrum is 60 s. FIG. 4. (Color online) Energy spectra of X-rays measured in vacuum as in Fig. 2(a). The channel width ∆E of the multichannel analyzer is 89.9 eV. The anode current is fixed to 1 nA during the measurement. The measurement time for each spectrum is 60 s. rays with anode voltages of 8 and 10 kV exceed the corre- sponding anode voltages not as expected. This is due to the double or multiple counting of photons during the time con- stant of the detection system. For the charge neutralizer, the ion generation rate G is one of the important figures of merit, which can be estimated as (cid:34) (cid:35) (cid:88) i G(T, P) = 1 S ∆t Ei W Y(Ei) µen(Ei) ρ ρ(T, P) , (2) where T and P are the air temperature and pressure, respec- tively, S is the area of the X-ray detector, ∆t is the measure- ment time for obtaining the spectrum, Ei is the X-ray energy of the ith channel of the detector, W is the average ioniza- tion energy of air, Y(Ei) is the X-ray yield, µen(Ei) is the X- ray absorption coefficient of air, ρ is the mass density of air. Figure 6 shows the ion generation rate estimated from the spectrum shown in Fig. 5 using Eq. (2) with S = 13 mm2, ∆t = 60 s, W = 34 eV,31,32 µen/ρ from the database,33 and ρ = 1.205×10−3 g/cm3 at 760 Torr and 20 ◦C.34 The maximum ion generation rate in Fig. 6 is 1.6 × 105 cm−3s−1, corresponding FIG. 6. (Color online) Estimated ion generation rate at 760 Torr and 20 ◦C as a function of anode voltage. to the ion concentration Cion of 5.0×105 cm−3.7 It is reported7 that Cion = 107 cm−3 or G = 6.3× 107 cm−3s−1 is enough for a charge neutralizer. The maximum G estimated in the present work is two orders of magnitude lower than this value. The ion generation rate can, however, be increased by increasing the anode current, which was intendedly reduced from 300 µA to 400 nA in order to obtain the X-ray spectrum shown in Fig. 5. Assuming that G is proportional to the anode current, we can expect G to be 750 times larger than those in the present work with an anode current of 300 µA, the upper limit of the emitter used in the present work. This means that the charge neutral- ization performance of the present device is fairly good. The ion currents observed in air by using the metal plate biased at −1 kV are shown in Fig. 7 as a function of the an- ode current. The ion current was roughly proportional to the anode current as expected. The absolute value of ion current with positive bias should be similar because it is considered that the ion balance of the X-ray charge neutralizer is better A5 kVX-rayaircharged plate ( )ground plateinsulator0510100101102103Energy (keV)Yield (count / E )051015100101102103104Energy (keV)Yield (count / E )0510103104105106Anode Voltage (kV)Ion Generation Rate (cm-3s-1)4 FIG. 7. (Color online) Ion current measured in the air as a function of anode current. FIG. 9. (Color online) Voltage at the charged plate as a function of time estimated from the observed current shown in Fig. 8. The decay observed without X-ray irradiation should be due to the natural neutralization of the charged plate interacting with the surrounding air. If the decay time is defined as the time at which the voltage becomes 1/10 of the initial value, it is esti- mated to be 17.5 and 215 s with and without X-ray irradiation, respectively. The decay time of 17.5 s with X-ray irradiation is not very good compared with the reference7, but can be im- proved by increasing the X-ray intensity. The X-ray intensity can be increased by decreasing the distances between the Cu target and the Be window and between the Be window and the object material to be neutralized, which are 13 and 5 cm, respectively, in the present work for the preliminary demon- stration. IV. CONCLUSIONS An X-ray charge neutralizer was demonstrated by using a screen-printed CNT field emitter. The effective area of the emitter is ∼ 4 × 10 mm2. This is not very large and is almost a point source because the distances in the present work be- tween the emitter and the Cu target, between the Cu target and the Be window, and between the Be window and the ob- ject material to be neutralized are 8, 13, and 5 cm, respec- tively. To realize a large-area flat-panel source is not diffi- cult because screen printing can be easily applied to a large- area process. Charge neutralization characteristics were mea- sured and showed good performance even under such an al- most point-source condition, suggesting that the performance is much improved when a vacuum-sealed large-area flat-panel charge neutralizer is realized using the screen-printed CNT field emitter. FIG. 8. (Color online) Current measured by the charged plate mon- itor shown in Fig. 3. The distance between the Be window and the charged plate is 5 cm. The anode voltage and anode current were 10 kV and 300 µA, respectively, during the measurement. than that of the corona-discharge-type neutralizer2, although the measurement with positive bias was not performed owing to the voltage source restriction. The measured current to the ground plate Igr, defined in Fig. 3, is shown in Fig. 8. For this measurement, the anode current was increased and fixed to 300 µA to obtain the high- est neutralization performance. When the current Igr shown in this figure is used with Eq. (1), Vcp (cid:44) 0 after a sufficiently long time. This is probably due to the unreliable value of the capacitance C. If C is assumed to be ∼ 10% larger than 25 pF, Vcp = 0 after a sufficiently long time. The following nor- malization was, therefore, used instead of Eq. (1) to avoid the problem: 1 − (cid:82) t (cid:82) ∞ 0  . 0 Igr dt Igr dt Vcp(t) = Vcp(0) (3) ACKNOWLEDGMENTS The resulting estimated electronic potentials at the charged plate with and without X-ray irradiation are shown in Fig. 9. This work was partially supported by JSPS KAKENHI Grant Number 23360022. 0102030400246Anode Current (A)Ion Current (nA) 10 kV 8 kV 5 kVAnode Voltage01002000246810Time (s)Current (nA) with X-ray irradiation without X-ray irradiation0100200012345Time (s)Estimated Voltage (kV) with X-ray irradiation without X-ray irradiation1C. G. Noll, in Handbook of Electrostatic Processes, ed. J.-S. Chang, A. J. Kelly, and J. M. 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Kanazawa, T. Oyama, K. Murakami, and M. Takai, J. Vac. Sci. Technol. 1315 (2004). Technol. B 21, 362 (2003). B 22, 1342 (2004). 24W. Rochanachirapar, K. Murakami, N. Yamasaki, S. Abo, F. Wakaya, M. Takai, A. Hosono, and S. Okuda, J. Vac. Sci. Technol. B 23, 765 (2005). 25K. Ohsumi, T. Honda, W. S. Kim, C. B. Oh, K. Murakami, S. Abo, F. Wakaya, M. Takai, S. Nakata, A. Hosono, and S. Okuda, J. Vac. Sci. Technol. B 25, 557 (2007). 26H. Oki, A. Kinoshita, T. Takikawa, W. S. Kim, K. Murakami, S. Abo, F. Wakaya, and M. Takai, J. Vac. Sci. Technol. B 27, 761 (2009). 27T. Takikawa, H. Oki, Y. Matsuura, K. Murakami, S. Abo, F. Wakaya, and M. Takai, J. Vac. Sci. Technol. B 28, C2C41 (2010). 28T. Manabe, S. Nitta, S. Abo, F. Wakaya, and M. Takai, Tech. Dig. 25th Int. Vacuum Nanoelectronics Conf. (IVNC 2012), p. 122. 29S. Nitta, S. Abo, F. Wakaya, and M. Takai, Proc. Int. Display Workshop 2012, Vol. 19, p. 1765. 54, 06FF10 (2015). 30S. Okawaki, S. Abo, F. Wakaya, M. Abe, and M. Takai, Jpn. J. Appl. Phys. 31Houshasen Gairon (Introduction to Radiation), ed. H. Iida (Tsusho Sangyo Kenkyusha, Tokyo, 2005) 6 ed. [in Japanese]. 32S. Macheret, M. Shneider, and R. Miles, IEEE Trans. Plasma Sci. 30, 1301 33J. H. Hubbell and S. M. Seltzer, "Tables of X-Ray Mass Attenuation Coeffi- cients and Mass Energy-Absorption Coefficients from 1 keV to 20 MeV for Elements Z = 1 to 92 and 48 Additional Substances of Dosimetric Interest" (2004) [http://www.nist.gov/pml/data/xraycoef/index.cfm]. 34Rika Nenpyo (Chronological Scientific Tables), ed. National Astronomical Observatory of Japan, (Maruzen, Tokyo, 1990) [in Japanese].
1808.04177	1	1808	2018-08-13T12:39:23	Optical Properties of an IR-Transparent Prismatic Plate in Exposure to the Thermal Radiation and its Application as a Radiation Rectifier	[ "physics.app-ph" ]	Optical properties of a prismatic transparent plate and its effects on thermal radiation heat transfer are studied. A 3D ray-tracing numerical method is used to prove the bi-transmittance property of the prismatic sheet when it is exposed to thermal radiation in two opposite directions. It is shown that in the present of a prismatic window a thermal equilibrium with a temperature gradient between two sources is possible.	physics.app-ph	physics	Optical Properties of an IR-Transparent Prismatic Plate in Exposure to the Thermal Radiation and its Application as a Radiation Rectifier A. Raghavi Department of Physics, Payame Noor University, Tehran 19395-4697, Iran Abstract Optical properties of a prismatic transparent plate and its effects on thermal radiation heat transfer are studied. A 3D ray-tracing numerical method is used to prove the bi-transmittance property of the prismatic sheet when it is exposed to thermal radiation in two opposite directions. It is shown that in the present of a prismatic window a thermal equilibrium with a temperature gradient between two sources is possible. I. Introduction Metamaterials are artificial structures (products of human ingenuity), designed to obtain controllable electromagnetic or optical properties. It includes designing and constructing artificial media with properties not found naturally [1]. The main index of this kind of materials is their abnormal behavior which is governed by their structure rather than their composition. According to this generalized definition, the new optical components known as prismatic structures can also be classified as a type of metamaterials, designed artificially for specified applications in light control. A prismatic sheet is an array of prismatic elements that are positioned next to each other in a 2D or 3D pattern [2]. Prismatic sheets can be categorized in two distinct subgroups as microprismatic and macroprismatic structures, referring to the size of individual prisms relative to the wavelength of the applied radiation. Microprismatic sheets differ from the other one in both the application domain and the method which is applicable for their studies. The methods which are useable in microprismatic structure analyzes usually are based on electromagnetic theory and wave optics [3], while for analyzing the properties of macroprismatic devices the methods of geometric optics are sufficiently accurate and acceptable [4]. In the present work a different potential application for the transparent macroprismatic sheets is introduced and analyzed which can work as a thermal radiation rectifier. It is shown by means of an extended numerical simulation approach that a prismatic transparent sheet has an abnormal bi-transmittance 1 property, i.e. different transmittance coefficients in two opposite directions, against the natural thermal radiation of bodies. The paper is organized as follows. In section II bi-transmittance sheets and their effects on thermal equilibrium state between two radiation sources is explained. Section III is devoted to introducing and analyzing the transmission properties of a prismatic sheet, using a 3-D ray-tracing matrix method. More realistic conditions for radiation and energy exchange between two thermal sources are studied in section IV, where the parameters such as emissivity of the surfaces, spectral content of radiation and the material of prismatic plate are bring into account. A complementary argument about the time scale of equilibrium process and effects of other competitor phenomena in heat transfer mechanism is accessible in section V. Finally, a summary and conclusion is presented in section VI. II. Thermal equilibrium in presence of a bi-transmittance medium Before starting the main work which is the abnormal optical properties of the prismatic sheets, let us drop some lines about the feature of such an abnormal medium in accordance with the radiation heat transfer process. This preliminary argument is worthwhile because the foremost use of the under-study metamaterial is realized to be placed in this field of applications. Two infinitely long and directly opposed parallel surfaces at temperatures are in thermal energy exchange with a hemispherical total radiant obeying the Stefan -- Boltzmann law, . Here, is the Stefan -- Boltzmann constant and is the total hemispherical emissivity for i'th surface. If two sources initially be in different temperatures then different energy flux between two surfaces bring the total system to a final equilibrium state with both surfaces in the same equilibrium temperature. This is the ordinary thermal radiation equilibrium process which occurs in a normal thermal radiation transfer mechanism. If an ordinary transparent sheet is placed between two sources, as it is shown schematically in Fig. (1), then still the state of the equilibrium will be the same as before, unless the relaxation time which will increase because of the decreasing the transferring energy. (1) 2 Figure 1: General arrangement of a radiation heat transfer system in the present of a semitransparent medium. Surfaces (1) and (2) are radiating sources and the sheet (m) is the semitransparent medium. From the other hand, if the transparent sheet in the previous structure supposed to be an unusual medium with two different total hemispherical transmittances and for two opposite directions then the process of energy transfer between two surfaces will be altered with a quite different consequence. To find the equilibrium temperature for new arrangement of the system a net-radiation method [5] is employed to analyze the radiant heat transfer between two sources. The surfaces (1) and (2) in Fig. 1 are supposed to have the same emissivity and reflection index and are in thermal exchange only through their thermal radiation. The medium (m) is a bi-transmittance window with the absorption coefficient and the reflectivity indexes and . Introducing the total emerging radiation power per unit area for surfaces (1) and (2) as and and for two faces of (m) as and then from the conservation of energy the following equations hold, Here, , and are the thermal radiant of surfaces (1), (2) and (m), respectively. The temperature of both sides of (m) is taken to be the same. Because both diffusive and specular reflection and transmission are present, the view factors for the faces are too difficult to be included. To avoid this difficulty we set all view factors equal to unity by extending all surfaces infinitely. It is equivalent in practice to place whole of the system inside an enclosure with fully reflective walls which resembles the problem to the same situation as the case of infinitely (2) (3) (4) (5) 3 extended surfaces. The net thermal radiation flux, entering the surfaces (1), (2) and (m) then are , where from the Kirchhoff's law, and . When whole of the system is in thermal equilibrium the net energy exchange between surfaces are zero i.e. (8) (9) . (10) Solving the recent set of equations together with equations (2-5) we get to the following relation between the radiant of two sources, or by substituting from Eq. (1), (6) (7) (8) (11) ) . ( Here and are the equilibrium temperatures of surfaces (1) and (2), respectively. For the case of an ordinary medium with , this leads to the expected result, . But the interesting result achieves when the medium is taken to be a bi-transmittance medium with . In this situation Eq. (12) says that the thermal equilibrium occurs for even though two sources are in different temperatures. In what follows it is tried to prove that a transparent prismatic sheet can be a practically available exemplar for a real bi-transmittance medium. (12) III. Optical properties of a prismatic sheet In this section we are going to prove the bi-transmittance property of transparent prismatic planes. An adhoc 3D ray-tracing matrix code is developed for this purpose along the lines of the formulation that is introduced in [4]. The code is used to investigate the behavior of transmittance of a prismatic transparent sheet when it is exposed to a flux of thermal radiation with a Lambertian angular distribution. An illustrative picture of what we mean from a prismatic sheet is depicted in Fig. (2). The corrugations on surface of plate are pyramidal prisms with the same apex angles. The apex angle of the prisms is an important parameter that governs its optical properties. A prismatic sheet with apex angles of is a flat parallelepiped window with the same transmittance for two oposite directions. 4 Nevertheless, for other apex angles the equality or inequality of two transmittances remains as a question to be answered by more investigations. FIG. 2. A prismatic plate. It is important to be mentioned here that the parameter that is calculated in this manner as transmittance of a medium is not exactly the same as the transmittance of radiation energy. Strictly speaking, what the ray-tracing method gives is just the transmittance of rays which can be regarded as a representation for the transmittance of photonic flux. Relation of two kinds of transmittances is discussed in more details in section III. The real sample that is used in the present study is an infinitely extended plate which can be achieved in simulation by placing a unit prismatic cell inside a waveguide with totally reflecting walls, as it is illustrated in Fig. 3. In practice, the effects of boundaries should be avoided by either increasing the reflectivity of walls or increasing the total dimensions of the sample prismatic sheet compared to the dimensions of a unit cell. The arrangement of different components in the system which is employed to evaluate the transmittance of the prismatic plate is sketched in Fig. (3).The radiation sources (a) and (b) are two plane surfaces with the same physical properties and parallel to the base of the prism. The images of sources and unit prism in the enclosure walls simulate the situation of two un-bounded radiating surfaces and an infinitely extended prismatic plate. 5 FIG. 3. Schematic arrangement of the under study system. Surfaces (a) and (b) are radiating sources and prismatic plate is the transparent medium. Radiation is simulated in the form of emerging rays originating form randomly chosen points in the surface of radiation source toward the other surface. In this stage we do not include the spectral content of the radiation, since it is discussed in details in the next section. However, the angular distribution of radiation is an important parameter that must bring into account carefully. The angular distribution of the thermal radiation is known to be Lambertian, with an angular radiation intensity obeying the Lambert cosine law [5] where is the polar angle and is the intensity in normal direction. To achieve the desired angular distribution for generated rays first both polar and azimuthal angles are generated randomly and uniformly in the ranges of and , respectively. Then the distribution of polar angles is reformed to the cosine distribution (13) using the corresponding transformation function, [6]. The resultant will be a randomly uniform distribution of rays which are emerging from the surface in random directions with cosine distribution in polar angles and uniform distribution in azimuthal angles. Since the thermal radiation in the room temperature occurs in the range of IR spectrum, the constituting material of prism are chosen from an IR transparent material for a room temperature application. More in vogue materials for this purpose are IR transparent crystals with a refraction index about , (e.g. NaCl and KBr) and (e.g. ZnSe and KRS5) or IR transmitting glasses such as arsenic glasses ( ). Accordingly we choose to work with two sample values, the method of inverse-transform with (13) 6 and for the refraction indexes to show the effect of material on desired properties. The reflectivity for an un-polarized directional wave from each interface obtains from the Fresnel's relations [( √ √ ) ( √ √ ) ] (14) where, is the relative refraction index of the interface [5]. The Fresnel's reflection from the interfaces of two mediums is included in the code by assigning a reflection probability amplitude to each ray, equal to the reflectivity which obtains from (14). The absorption inside the prism is neglected for the sake of simplicity ( ). Of course it wouldn't have a significant effect on our results because practically it is negligible for a good transparent medium. Moreover, the contribution of both sides of plate to the net radiation received by two sources are the same, regardless the shape of its surfaces. In the numerical 3D ray-tracing method each ray is specified with three components of its unit vector (direction cosines) together with the start and end points on the surfaces that constitute the physical structure of the system. Since all surfaces are flat, they are totally determined from the surface equation in Cartesian coordinate as where the component of the normal unit vector, i.e. , , together with D specify both the orientation and the position of each surface, exactly. The line path of the ray should be also presented with the general line equation ⃗ ⃗ where ⃗ is the start point, is a unit vector indicating the direction of ray propagation and t is the line parameter. The start point for each ray is a randomly chosen point on one of the sources and its direction is a randomly direction with a cosine distribution in polar angle, as it was discussed previously. To find the end point we let the line equation of ray (Eq. 16) to intersect with the plane equations of all surfaces (Eq. 15) and then choose the nearest intersection point as the end point of the ray. In the next step we set the end point of the old ray as the start point of a new ray and try to find the new direction according to the fact that it is whether reflected from the interface or refracted into the new medium. The new direction obtains simply by using the laws of reflection and refraction (Snell's law) respectively. In practice, for a set of incident, reflected and refracted rays which can be indicated by unit vectors (15) (16) 7 , and , respectively, we can use the matrix equations ( and ) ( ) ( ) (17) ( ) ( ) ( ) (18) (19) where , , and [4]. The square matrix in Eqs. (17) and (18) is composed of characteristics of the normal incident ray, plane of incidence, and incident ray. Referring to this as the incident matrix then the reflection and the refraction vectors M can be derived from the formal solution to the matrix equations (17) and (18) as where, is either of angle vectors to the right of Eqs. (17) and (18). When the new direction is determined through Eq. (19), we can repeat the previous steps, until either the ray passes through the prism and hit the next source in the opposite side or reflects to the first side and return back to the source. In the former case we count the ray as a transmitted ray while in the latter case it will reckoned as a reflected ray. Sometimes, but very seldom, it happens for a ray to fall in an endless or very long loop of reflections and refractions without ending to any one of source plates. To avoid this situation we set a finite number (e.g. nt=100) as the allowed number of distinct propagation of rays. The above mentioned algorithm which is the base of our code is exploited to solve the problem of radiation transmission through a prismatic plate in a geometry as shown schematically in Fig. (3). Before starting the main simulation study lets to check the degree of accuracy of the code result by comparing it with a known theoretical value, namely the reflectance of a plane transparent parallelepiped window. For a non-absorbing transparent plane window with directional reflectivity , the total directional transmittance reads [5] For example when n=2.4 and the incident radiation is equation (14) gives . Substituting this into (20) one find T=0.7079 for the total transmittance. (20) 8 Now we choose the same refraction index and incident angle as the input parameters of our code and then execute it for an apex angle of (flat sheet). The result is T=0.7107 with a good agreement with the corresponding theoretical value. Repeating the test for other samples give the same convincible results. After getting assurance about the reliability of the code now we can start our main study. The number of rays for each execution is chosen to be , for which a stable result obtains that do not varies notably by increasing the ray number N. Simulation is executed for different apex angles from up to with a length step of . The simulation is repeated for two sample refraction indices n=1.5 and n=2.4 separately. The results are graphed in Figs. (4a&b), where total transmittance is plotted versus the apex angle of prisms for both 'apex to base' (dot-dashed line) and 'base to apex' (dashed line) directions. The difference between two transmittance values is also plotted in a solid line. Error, which is the number of truncated rays because of lengthening their paths, is indicated by dots for each apex angle. FIG. 4. Ray transmittance of a prismatic sheet in two opposite directions for two different refraction indices. As it is evident from these illustrations, a transparent prismatic plate is really a bi- transmittance medium. Solid lines in two figures show that the transmittance difference is a function of both the refraction index and the apex angle of prisms. Maximum difference occurs in different apex angles for different constituting materials. For n=1.5 the prism with maximum difference in two transmittances is a 9 right angle prism with apex angle of , while for n=2.4 the maximum difference occurs for . Although the maximum of curves are in a definite apex angle but the curves are approximately flat to some extend around this specified angles. As a result, there are many different choices available for constituting the plate by adopting different apex angles. Increasing the apex angle behind the angle of maximum difference decreases the transmittance difference, until it totally vanishes for , as expected for a simple parallelepiped plate. IV. Energy transmittance and more realistic conditions As mentioned previously, there is a different between the transmittance calculated by means of ray tracing method and the transmittance as the ratio of the transmitted energy to the incident energy. It will be more realistic to consider the former as the transmittance of incident photonic flux, regarding each ray as a pseudo-photon propagating along the ray path. Each photon carries a definite energy corresponding to its specified frequency whereas the frequencies are distributed amongst the photons in the form of the Plank's spectral distribution function. The spectral photonic flux density can be derived from the well-known spectral Plank emissive power as ( ) . (22) (21) . , a constant corresponding to the Stefan-Boltzman . Equation (22) is counterpart of the Stefan- The total photonic flux density then reads ∫ with constant, i.e. Boltzman law for the total emissive power of a black-body, i.e. ∫ As already mentioned, each ray may be regarded as a representation for a photon in the radiation field. From this point of view the total energy corresponding to n photons, each having a specified frequency of , equals the sum of individual photon's energies, ∑ demanded that the frequencies are distributed according to the spectral distribution function (21). For a non-dispersive medium the transmitted portion of photons also would have the same frequency distribution. Therefore, the remaining problem is the method for giving the desired frequency distribution to the bunch of rays that are transmitted through the prismatic sheet. To this end, we employ the acceptance -- (23) (24) 10 rejection method [6] to distribute the number of n randomly generated frequencies amongst n photons (rays) in the form of distribution function (21). Because of infinitely extended domain of the frequencies we have to truncate the frequencies at a suitable cutoff frequency, which is where the value of photonic fluxes becomes negligible. In the range of common room temperatures we choose , for which the numerical evaluation of the integral in (22) up to this cutoff frequency gives the same result as one obtains from the Stefan-Boltzman law. The next step is to test the accuracy of the results from Eq. (24) for the given frequency distribution obtained from numerical acceptance-rejection method. Supposing that the number of N(T) thermally radiated photons is equivalent to an amount of E(T) radiated energy then from Eqs. (22) and (23) one find for energy of n photons (25) A comparison between the energy from the theoretical formula (24) and the corresponding numerical results from Eq. (25) shows the degree of accuracy for our numerical method. With an amount of of photons at , Eq. (25) gives the theoretical value (in arbitrary units) while for the same parameters equation (24) gives the numerical value , which is in an acceptable agreement with the theoretical value. Now we are in a position that we can use our numerical method to estimate the amount of energy transmittance when the ray transmittance is given along the lines of previous section. To get to more realistic conditions it is better to include another important parameter, i.e. the transmitting window for a given material. The transparency range of a material is limited to the frequencies between two thresholds, usually designated by their corresponding wavelengths. For example, the transparency of KBr crystal is in the range of wavelengths from to whereas for ZnSe crystal they range from to . To bring these considerations into account we modify eq. (24) in a new form as ∑ where is the ray transmittance an is a window function defined as, (26) { . (27) Keeping these considerations in mind we calculate the energy transmittance from the ray transmittance values evaluated in previous section. For n=1.5 and choosing the material to be KBr crystal the energy transmittance difference as a result of Eq. (26) is plotted versus the apex angle of prism in Fig. 5. The corresponding quantity for ray transmittance is also plotted for comparison. 11 Fig. 5. Graphs of energy and ray transmittance difference vs. apex angle. As it is inferred from this illustration, the values of transmittance difference for energy exchange are lowered in comparison with the one of ray transferring. Of course the different between the transmittance for two directions still exist and consequently now we can assert certainly that a prismatic sheet is still a worthy sample for the real world bi-transmittance medium in accordance with the thermal radiation energy transfer. V. Equilibrium temperature and relaxation time estimation Another interesting problem is the efficiency of the device when it is used as a radiation rectifier and estimating the temperatures of two sources in thermal equilibrium. A rough estimation for the equilibrium temperature obtains directly , when from Eq. (12). For the case of KBr crystal with one of source (e.g. the source next to the base) is in contact with a reservoir at room temperature, , the other source (in the absence of the medium emissivity) will achieves an equilibrium temperature of and ( ) . (28) This is the equilibrium temperature when other heat transfer mechanisms i.e. conduction and convection are neglected. In practice it is not possible to completely isolate one of the sources such that the radiation heat transfer being the only heat transfer mechanism. Consequently, in a realistic situation there is a competition between the radiation heat transfer, to bring the system into the equilibrium state of Eq. (28) and other mechanism to return back it to the ordinary equilibrium state of . To find the dominant mechanism it is necessary to have an estimation for the time scale of each mechanism. Here we try to find an analytical equation for time evolution of the 12 system. In this perpose, we start with Eq. (6) for the net radiant flux of a source surface. Solving the set of equations (2)-(5) for and and inserting the results in (6) result to the following relation for the rate of net thermal energy intering the surface (1), A being the surface area and . The absorption of the prismatic sheet is neglected for the sake of simplicity. Taking the source (1) to be a blackened sheet, with , d and its mass density, thickness and specific heat of constituting material, respectively, one can set and then solve the differential equation (29) to get , (29) [ ( ) ( ) ( ) ( )] (30) This is the required time for the source (1) to reach to the temperature , starting from the initial temperature , while other source is kept at fixed temperature . As an illustrative example, the elapsed time t versus is plotted in Fig. 6 for the case in which the source is taken to be a thickness ceramic plate with , and and the medium being a KBr prismatic plate. The initial temperature of the surface (1) and the fixed temperature of surface (2) is chosen to be . Fig. 5. Variations of an isolated ceramic surface temperature versus time when it is in heat transfer with a reservoir at fixed temperature . The dashed line indicates the final equilibrium temperature ( ). This illustration shows precisely that such a system never achieves an equilibrium state in a finite time domain, because of the exponential nature of the variation of temperature versus time. Nonetheless, the rate of variation in the beginning of process is considerably fast, such that the half of total temperature difference 13 achieves in almost 20 minutes for the given structure. It shows precisely that the conductive heat transfer is not a serious obstacle and can be overcome by choosing appropriate selection for the restrains that hold the isolated source. The convection heat transfer can also avoided by placing whole of the system in an evacuated chamber. VI. Summary and discussion In spite of the lengthy list of different proposals and plans that have been presented during the last century as the possibility of violation for the second law of thermodynamics in macroscopic scales, still no one has reported an experimental and a real world confirmation for this challenge. Nonetheless, the attraction of the subject, especially because of its relation to the possibility of extracting the internal energy of the world as an endless source of energy, has maintained it as an interesting and alive field for serious scientific investigations and arguments. In this paper a new challenge with the second law is presented and discussed numerically by means of the bi-transmittance mediums. The theoretical analyzes of the problem in section II confirmed the idea and ended with a relation for the equilibrium temperatures as a function of the medium properties. In section III the prismatic transparent sheet introduced as a medium that has the desired bi- transmittance and its optical properties derived and discussed by means of a numerical simulation method. It showed there that a prismatic transparent sheet has different transmittances for two opposite directions with the values that are dependent on the material and the geometry of the prismatic corrugations on surface of the sheet. Imposing more realistic parameters, such as real energy flow and transmittance window of material, also confirmed again the predicted properties as it discussed in section IV. Finally in section V the applicability of the device proved from the point of view of the relaxation time and the contribution of other competitor phenomena in heat transfer. In summary, the results of our numerical investigations in the context of geometrical optics proved that a prismatic transparent sheet when placed as the medium between two thermally radiating sources works as a radiation rectifier that can establish a temperature gradient across two sources. This is very important and interesting property for a prismatic sheet because its operation is in evident contradiction with the second law of thermodynamics and so deserves to be regarded as a new type of metamaterials. Meanwhile, it is notable that the results are valid only where the geometric optics is valid i.e. where prismatic corrugations are very larger in size than the wavelength of the thermal radiation in use. In contrast, for what are known as microprismatic structures a fully electromagnetic approach is needed to explain their optical properties correctly. 14 References [1] R. Marque´s, F. Marti´n and M Sorolla, Metamaterials with Negative Parameters, (John Wiley & Sons, Inc., Hoboken, New Jersey, 2008) [2] D. F. Wanderwerf , Applied Prismatic and Reflective Optics, (SPIE press, Bellingham, Washington USA, 2010). [3] A. Deinega, I. Valuev, B. Potapkin and Y. Lozovik Y., "Minimizing light reflection from dielectric textured surfaces", Journal of Optical Society of America A, 28, 5, 2011. [4] S. C. Yeh et al, "Distribution of Emerged Energy for Daylight Illuminate on Prismatic Elements", Journal of Solar Energy Engineering, 133, pp 021007-1-9, 2011. [5] R. Siegel and J. R. Howell, thermal radiation heat transfer (hemisphere publishing corporation, Washington, third edition, 1992) [6] R. Y. Rubinstein and D. P. Kroese, simulation and the monte carlo method (John Wiley & Sons, Inc., Hoboken, New Jersey, 2017) 15
1807.09978	1	1807	2018-07-26T07:05:37	The Potential of Singlet Fission Photon Multipliers as an Alternative to Silicon-based Tandem Solar Cells	[ "physics.app-ph" ]	Singlet fission, an exciton multiplication process in organic semiconductors which converts one singlet exciton into two triplet excitons is a promising way to reduce thermalization losses in conventional solar cells. One way to harvest triplet excitons is to transfer their energy into quantum dots, which then emit photons into an underlying solar cell. We simulate the performance potential of such a singlet fission photon multiplier combined with a silicon base cell and compare it to a silicon-based tandem solar cell. We calculate the influence of various loss-mechanisms on the performance potential under real-world operation conditions using a variety of silicon base cells with different efficiencies. We find that the photon multiplier is more stable against changes in the solar spectrum than two-terminal tandem solar cells. We furthermore find that, as the efficiency of the silicon solar cell increases, the efficiency of the photon multiplier increases at a higher rate than the tandem solar cell. For current record silicon solar cells, the photon multiplier has the potential to increase the efficiency by up to 4.2% absolute.	physics.app-ph	physics	Traceback (most recent call last): File "/usr/bin/pdf2txt.py", line 115, in <module> if __name__ == '__main__': sys.exit(main(sys.argv)) File "/usr/bin/pdf2txt.py", line 107, in main caching=caching, check_extractable=True): File "/usr/lib/python2.6/site-packages/pdfminer/pdfpage.py", line 121, in get_pages doc = PDFDocument(parser, password=password, caching=caching) File "/usr/lib/python2.6/site-packages/pdfminer/pdfdocument.py", line 326, in __init__ self._initialize_password(password) File "/usr/lib/python2.6/site-packages/pdfminer/pdfdocument.py", line 348, in _initialize_password raise PDFEncryptionError('Unknown algorithm: param=%r' % param) pdfminer.pdfdocument.PDFEncryptionError: Unknown algorithm: param={'CF': {'StdCF': {'Length': 16, 'CFM': /AESV2, 'AuthEvent': /DocOpen}}, 'O': '6E\x1b\xd3\x9du;\|\x1d\x10\x92,(\xe6fZ\xa4\xf35?\xb04\x8bSh\x93\xe3\xb1\xdb\\W\x9b', 'Filter': /Standard, 'P': -4, 'Length': 128, 'R': 4, 'U': ';;p\xda\xd2W(\xb9\xe0`-\xed]R\xe4~\x00\x00\x00\x00\x00\x00\x00\x00\x00\x00\x00\x00\x00\x00\x00\x00', 'V': 4, 'StmF': /StdCF, 'StrF': /StdCF}
1708.00372	2	1708	2018-03-15T12:27:45	Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches	[ "physics.app-ph" ]	Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory (MRAM) and resistive random access memory (RRAM) suffer from limitations of low tunnel magnetoresistance (TMR), low access speed or finite endurance. NVMs with synergetic advantages are still highly desired for future computer architectures. Here, we report a heterogeneous memristive device composed of a magnetic tunnel junction (MTJ) nanopillar surrounded by resistive silicon switches, named resistively enhanced MTJ (Re-MTJ), that may be utilized for novel memristive memories, enabling new functionalities that are inaccessible for conventional NVMs. The Re-MTJ device features a high ON/OFF ratio of >1000% and multilevel resistance behaviour by combining magnetic switching together with resistive switching mechanisms. The magnetic switching originates from the MTJ, while the resistive switching is induced by a point-switching filament process that is related to the mobile oxygen ions. Microscopic evidence of silicon aggregated as nanocrystals along the edges of the nanopillars verifies the synergetic mechanism of the heterogeneous memristive device. This device may provide new possibilities for advanced memristive memory and computing architectures, e.g., in-memory computing and neuromorphics.	physics.app-ph	physics	Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches Yu Zhang, Xiaoyang Lin, Jean-Paul Adam, Guillaume Agnus, Wang Kang, Wenlong Cai, Jean-Rene Coudevylle, Nathalie Isac, Jianlei Yang, Huaiwen Yang, Kaihua Cao, Hushan Cui, Deming Zhang, Youguang Zhang, Chao Zhao, Weisheng Zhao, and Dafine Ravelosona Mr. Y. Zhang, Dr. X. Lin, Dr. W. Kang, Mr. W. Cai, Dr. J. Yang, Dr. H. Yang, Mr. K. Cao, Mr. H. Cui, Mr. D. Zhang, Prof. YG. Zhang, Prof. C. Zhao, Prof. W. Zhao Fert Beijing Institute, BDBC Beihang University, Beijing 100191, China E-mail: [email protected] Mr. Y. Zhang, Dr. J. P. Adam, Dr. G. Agnus, Dr. J. R. Coudevylle, Mrs. N. Isac, Dr. D. Ravelosona Centre de Nanosciences et de Nanotechnologies, University of Paris-Sud, Université Paris- Saclay, Orsay 91405, France Mr. K. Cao, Mr. H. Cui, Prof. C. Zhao Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China Keywords: heterogeneous device, resistive switching, magnetic tunnel junction, silicon filaments, spintronics Emerging non-volatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low-power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory (MRAM) and resistive random access memory (RRAM) suffer from limitations of low tunnel magnetoresistance (TMR), low access speed or finite endurance. NVMs with synergetic advantages are still highly desired for future computer architectures. Here, we report a heterogeneous memristive device composed of a magnetic tunnel junction (MTJ) nanopillar surrounded by resistive silicon switches, named resistively enhanced MTJ (Re-MTJ), that may be utilized for novel memristive memories, enabling new functionalities that are inaccessible for conventional NVMs. The Re-MTJ device features a high ON/OFF ratio of >1000% and multilevel resistance behaviour by combining magnetic switching together with resistive switching mechanisms. The magnetic switching originates from the MTJ, while the resistive switching is induced by a point-switching filament process that is related to the mobile oxygen ions. Microscopic evidence of silicon aggregated as nanocrystals along the 1 edges of the nanopillars verifies the synergetic mechanism of the heterogeneous memristive device. This device may provide new possibilities for advanced memristive memory and computing architectures, e.g., in-memory computing and neuromorphics. 1. Introduction Non-volatile memories (NVMs) combined with novel computing architectures have recently been considered as the most promising solution to overcome the "memory wall" of von- Neumann computing systems[1-3]. For instance, in-memory computing architectures based on closely integrating fast NVMs with logic functions have been proposed to minimize the power consumption and pave the way towards normally-off/instant-on computing[4,5]. Meanwhile, neuromorphic computing inspired by the human brain exploits the resistive features of NVMs as artificial synapses and neurons and has already triggered a revolution for non-von- Neumann architectures[6-8]. Along this direction, two of the most promising NVMs, i.e., magnetic random access memory (MRAM)[3,9-11] and resistive random access memory (RRAM)[3,12-14], have attracted increasing interest. Tremendous efforts have been involved and amazing advances have been achieved in this field. Nevertheless, a few issues still exist and should be addressed before popular applications can be achieved. For example, multilevel resistance states can be achieved in either magnetic tunnel junctions (MTJs, the core device of MRAM) or RRAM devices. For MTJ devices, there are two main methods to obtain the multilevel resistance states, either by taking advantage of the stochastic behaviour of the magnetic switching[15], or by using vertical stacked MTJs as multilevel cell[16]. However, both of methods suffer from a challenge of a relative low tunnel magnetoresistance (TMR) ratio (<250% to date), which is a key limitation for high density and high reliability applications[17- 19]. Regarding RRAM devices with high ON/OFF ratios, they can provide the perfect multilevel resistances required for applications, but its relative low access speed and 2 endurance issues are limited by its intrinsic mechanism as electrochemical reduction and Joule heating process, which have become an intrinsic drawback for computing tasks. Therefore, an NVM that eliminates these shortcomings, for example, by integrating MRAM and RRAM into a single device, is still highly desired. Several recent studies based on an MgO-based MTJ have exhibited both magnetic switching (MS) and resistive switching (RS), enabling such possibilities[20-22]. However, those devices suffer from a trade-off between MS and RS as the MgO layer acts as both a tunnel barrier for MS and an insulator for RS. In this work, we report a novel heterogeneous memristive device composed of an MTJ nanopillar surrounded by resistive silicon switches, named a resistively enhanced MTJ (Re- MTJ), that can combine the advantages of both RRAM and MRAM for realizing advanced memristive memories. Different from previous studies, the RS in our proposed Re-MTJ originates from a point-switching filament process related to the mobile oxygen ions [23-26], while the MS from the MTJ. The MS and RS in the Re-MTJ can be individually optimized. Furthermore, our tests show that the Re-MTJ device can achieve a rather high ON/OFF ratio of >1000% and multilevel resistance behaviour; both of these characteristics are urgently required in advanced NVMs. In addition, the Re-MTJ may provide new functionalities that are inaccessible to conventional NVMs, e.g., for in-memory computing and neuromorphic computing as non-von Neumann computing architectures. 2. Results and Discussion Figure 1a shows a schematic view of the Re-MTJ device made of an in-plane magnetized CoFe(B)-MgO MTJ nanopillar and a SiOx-based polymer encapsulation layer. In the MTJ structure, the MgO tunnel barrier is sandwiched by two CoFe(B)-based magnetic thin films corresponding to the free and reference layers. Driven by either an in-plane magnetic field or a spin-polarized current, the MTJ can be switched between parallel (P) and anti-parallel (AP) 3 states, leading to two resistance states, namely, Rp and RAP, respectively. Figure 1b shows a cross-sectional transmission electron microscope (TEM) image of the device. The Re-MTJ devices were fabricated in a method similar to the conventional MTJs. The magnetic films were patterned into submicron-sized ellipses with dimension ranging from 80 160 nm 2  to 100 240 nm 2  using electron beam lithography (EBL) and an angle-optimized ion beam etching (IBE) process. Then, the MTJ nanopillars were encapsulated by a Si-O-based insulator fabricated by baking a polymer (Accuflo)[27] at a reduced temperature. As shown in Figure 1c, the cross-sectional TEM image of MTJ stacks after annealing indicates the presence of the crystallized MgO tunnel barrier and CoFe(B) layers, which has been reported as NaCl-structure and body-centred cubic (bcc) structures respectively[9,28]. Figure 2 indicates the very peculiar resistive behaviour of the device under an applied voltage resulting from the combination of current-induced magnetization switching (CIMS) and voltage-induced resistive switching (VIRS). Indeed, as shown in the typical I-V curves of Figure 2a, bipolar (in which positive and negative voltages have opposite effects) VIRS was observed in the absence of external magnetic fields, with a maximum voltage of 0.8 V. For this measurement, the MTJ was set to either the P or AP state using the external magnetic field before the measurement. Clear resistive switching behaviour was observed from which the SET and RESET voltages could be identified. Figure 2b shows the corresponding R-V curve for the P and AP configurations, in which the low-resistance state (LRS) and high- resistance state (HRS) can be observed. Here, the LRS is approximately 600  , irrespective of the magnetic configurations, and the HRS is approximately 1100  and 1300  for the P and AP states, respectively. We note that the low TMR (around 20%) presented here is related to a degraded crystalline structure of MgO layer with only 0.8 nm, for the facts that MgO(001) acts as a template to crystallize CoFe(B) and a bcc structure of CoFeB is crucial for gaining high TMR[9]. Since the MgO layer grown on an amorphous CoFeB is only 4 expected to have highly oriented polycrystalline MgO(001) structure when tMgO < 5ML (1.05 nm)[29], an optimization for TMR is possible for increasing the thickness of MgO layer. In this example, the typical ON/OFF ratio for the AP state was approximately 120%, but ratios reaching 1000% were observed (see Figure S2 in the Supporting Information). Notably, magnetization switching between the P and AP states was not observed during the voltage sweep. Additionally, we observed that the SET and RESET voltages were independent of the magnetic configuration. Figure 2c shows the R-V curve under the in-plane magnetic fields[30] that were used to assist CIMS. Pure CIMS was not obtained here at low voltages due to the thickness of the free layer. The maximum voltage applied was below 0.2 V in order to avoid VIRS and maintain the HRS. We observed CIMS assisted by the magnetic fields of AP P extH    110 Oe and P AP extH    104 Oe with typical current densities of cJ  AP P  1.7 10 A cm  5  2 and cJ  P AP  0.8 10 A cm  5  2 , respectively. These results show that CIMS and VIRS could be controlled independently. To observe both effects, a voltage was applied between ±0.8 V under a magnetic field (Figure 2d). In this case, we clearly observed that the VIRS and CIMS effects could act simultaneously. The results shown in Figure 2 are different from those of previous findings involving RS due to the filamentary current path in the MgO barrier. First, in our experiment, we observed bipolar switching instead of unipolar switching (SET and RESET were caused by applying voltages with the same polarity). In addition, we observed both MS and RS in the same R-V loop; this result suggests two independent origins for the CIMS and RS processes. To gain more insight, we carefully investigated the microstructures of the elements. The nanofabrication process of the device consisted of encapsulating the CoFe(B)-MgO nanopillars with a SiOx insulator in contact with the edges of the nanostructure (see Figure 1b and 3a). In the following, we provide evidence that the VIRS behaviour was induced by the presence of the resistive Si filaments at the edges of the nanopillars. Microscopic structure 5 characterizations were performed using energy-dispersive X-ray spectroscopy (EDS). Figure 3b and 3c indicates the presence of the Ta and Si elements detected by measuring the characteristic peaks of the -Ta L (8.145 KeV) and -Si K series lines, respectively. Note that since -Ta M (1.709 KeV) and -Si K (1.739 KeV) were separated by only 30 eV, the detector could not resolve these lines[31,32]. The detection results of both the Si and Ta elements overlapped, as seen in Figure 3c. Thus, the comparison between Figure 3b and 3c clearly evidenced that Si aggregation occurred along the sidewall of the nanopillars with a typical width of 5-10 nm. In addition, the high-resolution TEM (HRTEM) images of the nanodevice indicate the presence of nanocrystals with a typical size of 5-10 nm embedded in the amorphous SiOx along the edges of the nanopillars (see Figure 3d). The microstructural analysis and the electrical results of Figure 2 are consistent with the results from recent studies, which indicated that RS in a SiOx matrix can be induced in the presence of embedded Si nanocrystals[23,33-35]. More precisely, when an SET voltage is applied, the Si nanocrystals can grow locally by favouring an electrochemical reduction process from xSiO Si . This process induces a Si pathway (Si filaments) along the current flow direction, whereas a RESET voltage can favour the Si SiO x inverse process. This mechanism corresponds to a point-switching filament process involving local breakage and bridge evolution. One important question is related to the presence of Si nanocrystals in our devices. It has been shown that the forming process of Si nanocrystals can be induced within pure SiOx matrixes at low temperatures by etching the SiOx[23,36]. In this case, the Si filaments can germinate at the edges of the SiOx elements due to the presence of defects. In our case, the SiOx matrix surrounding the nanopillars was obtained by spinning a polymer (Accuflo) and transforming it into an insulator using an annealing process at approximately 300 °C. During the annealing process, the edges of the nanopillars involving damage induced by the etching process (see Experimental Section and Supporting Information Note 6) could serve as seed 6 interfaces to nucleate the Si nanocrystals. In addition, the crystalline character of the MTJ may have also favoured the germination of the Si nanocrystals. Indeed, an EDS linescan measured from the SiOx matrix into the MgO barrier (see Figure 3e and 3f) indicated that both Si and O aggregated at the edges of the nanopillars on a scale of 10 nm with a ratio of silicon to oxygen elements that was much higher at the edges than in the SiOx matrix. The fact that bipolar behaviour was observed here for the SET and RESET processes may have been related to the presence of mobile oxygen ions. Based on the analyses described above, a proposed schematic of the Re-MTJ device is presented in Figure 4a that consists of an MTJ-based element connected in parallel with a Si filament element. Such a device structure indicates that four distinct configurations with different resistance states can be achieved (see Figure 4b); this result is in agreement with the experimental results (see Figure 2d). When the Si filaments are not conductive (RESET process), the current mainly goes through the MTJ, resulting in an HRS, and when the Si filaments becomes conductive (SET process), the current mainly flows through the Si filaments, resulting in an LRS. To further verify the proposed device model, simulations were performed using a compact model that integrated a physical-based STT-MTJ[37] and a bipolar metal-insulator-metal (MIM) resistive junction[38] connected in parallel (see Figure 4c). Using the parameters of APR  1390  , PR  1160 , HRSR  64500 , and LRSR  660  , the R- V curve of Figure 2d that combines the features of CIMS and VIRS could be well reproduced. Furthermore, another interesting feature related to the microstructural properties of the devices is the strong correlation between the ON/OFF ratio of the RS and the TMR value of the MS (see Figure 4d). In particular, the ON/OFF ratio increased when the TMR value was reduced. This result suggests that when the TMR ratio was low, a point-switching filament process could occur, whereas when the TMR was higher, the conduction through the Si filaments was not active. Notably, the ON/OFF ratio and TMR behaviour in these devices 7 originated from the formation of an Si pathway in the SiOx matrix[23] and the 1 Bloch states filtering at the CoFe(B)/MgO interface[39], respectively. The oxygen ion movement from the SiOx matrix towards the MTJ nanopillars promoted the nucleation of the Si nanocrystals and affected the Fe-O bonds at the CoFe(B)/MgO interface[28,39-41]; these processes resulted in a high ON/OFF ratio but a low TMR. As a result, the mobile oxygen ions near the edges of the nanopillars (see Figure 4a) played a joint role in both the ON/OFF ratio and the TMR value. The multilevel states of the Re-MTJ device were investigated and are presented in Figure 5. Figure 5a shows seven consecutive R-V curves indicating that different resistance states could be reached using a single device. Each R-V curve corresponds to a different degree of the Si oxidation pathway, and the pathways were randomly induced by the combination of a local strong electric field and heating during the point-switching filament process. Figure 5b presents a Re-MTJ device that exhibited eight different states by combining two magnetic states (P and AP) with four different resistance states of the Si filaments. A larger TMR ratio was achieved for higher resistance states; this result reflects that the lower resistance of the MTJ dominated the current pathway. Furthermore, the data retention of the Re-MTJ device was tested for four different resistance states (see Figure 5c). All the configurations exhibited robust non-volatile properties. Although the resistances between LRS with P and LRS with AP are close (see Figure S5 in the Supporting Information), it can be improved by enhancing the TMR ratio with the further optimization of fabrication process. 3. Conclusion In conclusion, we fabricated a heterogeneous memristive device, Re-MTJ, an advanced NVM device that combines the merits of MRAM and RRAM. The Re-MTJ device integrates an MTJ nanopillar encapsulated by a SiOx-based polymer with surrounding resistive silicon filaments. We observed both MS and RS in the Re-MTJ; these behaviours originated from the 8 MTJ and silicon filaments, respectively. We reported a rather high ON/OFF ratio and multilevel resistance behaviour owing to the point-switching silicon filament process. These properties are rather preferable for high-reliability and high-density memory applications. The presence of nanocrystals within the silicon aggregates was confirmed by the microscopic structure characterizations. The proof-of-concept demonstration here involved low TMR values, but in principle, our approach can enable one to independently optimize the properties of the MTJ and silicon elements. The Re-MTJ device, with the merits of a high ON/OFF ratio, long endurance and multilevel resistance behaviour, can certainly benefit the advancement of memristive memory and computing architectures, such as in-memory computing and neuromorphics. 4. Experimental Section Sample preparation: The magnetic multilayers were deposited onto SiO2-coated Si wafers using a combination of RF and DC sputtering in a Canon-Anelva system. From the substrate side, the MTJ structure consisted of the following layers: Ta(5)/Ru(15)/Ta(5)/Ru(15)/Ta(5)/Ru(5)/PtMn(20)/CoFeB(1.5)/CoFe(2.0)/Ru(0.85)/CoFeB(1. 5)/CoFe(1.5)/MgO(0.8)/CoFe(1.5)/CoFeB(1.5)/Ru(2)/Ta(5)/Ru(10) (the numbers are the nominal thicknesses in nanometers). The bottom and top layers, Ta(5 nm)/Ru(15 nm)/Ta(5 nm)/Ru(15 nm)/Ta(5 nm)/Ru(5 nm) and Ru(2 nm)/Ta(5 nm)/Ru(10 nm), respectively, were designed for the CIPT measurements using a CAPRES microprobe tool. The typical TMR ratio and the resistive-area product of the unpatterned films were ~ 144% and ~ 19 μm 2 , respectively. Then, the annealing was performed at 350 °C for 1 h with an in-plane applied magnetic field of 1 T under a vacuum of 10-6 Torr. After the deposition, the multilayers were patterned into submicron-sized ellipses by electron beam lithography and ion beam etching. A 9 low-temperature curing process of Accuflo was utilized for encapsulating the patterned structure. Transport measurements: The fabricated devices were characterized using dc-transport measurements under in-plane magnetic fields (with a precision below 1 10 Oe  -3 ) with a two- probe geometry at room temperature. A bias voltage (or current) was applied to the top electrode, while the bottom electrode was grounded. The voltage-pulse (or current-pulse) durations were p  200 ms , and the remanent resistance of the Re-MTJ device was measured under a low bias between each voltage (or current) change. Model simulation: The compact model of the device was written using Verilog-A language and evaluated in a Cadence Spectre environment. The compact model integrated a physical- based STT-MTJ and a bipolar MIM resistive junction connected in parallel. Magnetic fields were not considered in the simulation. Acknowledgements The authors thank Mr. Li Huang, Prof. Xiufeng Han, Mr. Sylvain Eimer and Dr. Fabien Bayle for their technical support as well as Dr. Qunwen Leng for fruitful discussions. The authors acknowledge the financial support by the Chinese Scholarship Council (CSC), the projects from the National Natural Science Foundation of China (No. 61571023, 61501013, 51602013 and 61627813), Beijing Municipal of Science and Technology (No. D15110300320000) and the International Collaboration Projects (No. 2015DFE12880 and No. B16001). 10 [1] E. Linn, R. Rosezin, S. Tappertzhofen, U. Böttger, R. Waser, Nanotechnology 2012, 23, 305205. [2] J. J. Yang, D. B. Strukov, D. R. Stewart, Nat. Nanotechnol. 2013, 8, 13. [3] H. S. P. Wong, S. Salahuddin, Nat. Nanotechnol. 2015, 10, 191. [4] J. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart, R. S. Williams, Nature 2010, 464, 873. [5] M. M. Shulaker, G. Hills, R. S. Park, R. T. Howe, K. Saraswat, H.-S. P. Wong, S. Mitra, Nature 2017, 547, 74. [6] N. Locatelli, V. Cros, J. Grollier, Nat. Mater. 2013, 13, 11. [7] J. Grollier, D. Querlioz, M. D. Stiles, Proc. IEEE 2016, 104, 2024. [8] M. Prezioso, F. Merrikh-Bayat, B. D. 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A two-terminal MTJ nanopillar is encapsulated within a SiOx-based matrix. (b) TEM image of the Re-MTJ device. The top electrode, hard mask, MTJ stack (indicated with a red rectangular) and bottom electrode are indicated. (c) HRTEM image of a CoFe(B)-MgO-based MTJ nanopillar. The free layer (CoFe(B)), tunnel barrier (MgO), synthetic ferri-magnetic (SyF) reference layer (CoFe(B)/Ru/CoFe(B)) and anti-ferromagnetic layer PtMn are indicated. A crystalline structure can be observed for both CoFe(B) and MgO. 13 Figure 2. Transport properties of the Re-MTJ device. The direction of the external magnetic field is along the easy axis of the ellipse. The arrows and numbers (① ~ ⑥) indicate the voltage sweep direction. States 1 to 4 correspond to the resistance states described in Figure 4b. (a) I-V curves without an applied magnetic field up to 1 V . The MTJ was set to either the P or AP configuration before the measurement. The SET and RESET voltages are indicated. (b) Corresponding R-V curves of (a). (c) R-V curves under external positive and negative magnetic fields for voltages below 0.2 V R-V curves under external positive and negative magnetic fields up to 1 V process is observed near +0.5 V (SET) and -0.7 V (RESET). For the CIMS process, P to AP switching is observed near -0.5 V for a magnetic field of -104 Oe and near +0.4 V for a magnetic field of +110 Oe. , indicating pure CIMS without VIRS. (d) . The VIRS 14 Figure 3. Microstructural characterization of the Re-MTJ device. (a) STEM image near the vertical edge of the MTJ nanopillar. The regions of the hard Ta mask, top electrode and bottom electrode are indicated by the red dashed rectangles. (b) EDS mapping of Ta using the -Ta L line characteristic peaks. (c) EDS mapping of Si using the -Ta M(1.709 KeV) and characteristic peaks. Note that since the overlap, Ta is also detected. (d) HRTEM image of the edges of the nanopillars. Nanocrystalline structures embedded in the SiOx matrix are indicated by the red dashed rectangles. (e) STEM image obtained using an HAADF detector. The EDS linescan is marked in red and was measured from the SiOx matrix into the MTJ nanopillar. (f) EDS linescans for O, Si, Fe and Mg corresponding to the red line indicated in (e). Three different regions can be delimited: a pure SiOx region, an intermixed layer with aggregates of Si and O (10 nm) and an MTJ region. -Si K series line -Si K(1.739 KeV) peaks 15 Figure 4. Resistance switching model of the Re-MTJ device. (a) Schematic of the MTJ nanopillar surrounded by Si filaments. The blue and red balls represent the Si atoms and O atoms, respectively. (b) Physical model corresponding to an RRAM element in parallel with an MRAM element. Depending on the configuration of the RRAM and MRAM elements, four different states can be obtained in the Re-MTJ device. The blue balls represent the conductive filaments that form the Si pathway. States 1 - 4 correspond to those in Figure 2d. (c) Simulation of the R-V behaviour using a compact model of STT-MTJ and an MIM resistive junction connected in parallel. A magnetic field was not included in the simulation. (d) Relationship between the ON/OFF ratio and the TMR ratio measured from the different devices. The TMR was obtained through R-H measurements under a low voltage of 10 mV. The ON/OFF ratio was obtained after conducting a voltage (current) sweep. The blue squares are the experimental data, and the red line is a guide for the eyes. 16 Figure 5. Multilevel resistance states in the Re-MTJ device. (a) Seven different R-V curves under external magnetic fields in the same device. (b) R-H hysteresis loops with different initial resistance states for the same device. The measurements were conducted from an LRS (approximately 600 ) to an HRS (approximately 1300 ). (c) Time-independent resistance curves showing the non-volatile features of the Re-MTJ for four different resistance states (LRS+AP, LRS+P, HRS+AP and HRS+P). 17 A nanoscale heterogeneous memristive device combining the advantages of MRAM and RRAM is demonstrated. The device is based on a resistively enhanced MRAM element integrated with an MTJ nanopillar surrounded by silicon filaments that behave as resistive switches. The device features magnetic switching together with a high ON/OFF ratio of > 1000% and multilevel resistance behaviour. Keywords: heterogeneous device, resistive switching, magnetic tunnel junction, silicon filaments, spintronics Yu Zhang, Xiaoyang Lin, Jean-Paul Adam, Guillaume Agnus, Wang Kang, Wenlong Cai, Jean-Rene Coudevylle, Nathalie Isac, Jianlei Yang, Huaiwen Yang, Kaihua Cao, Hushan Cui, Deming Zhang, Youguang Zhang, Chao Zhao, Weisheng Zhao, and Dafine Ravelosona Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches 18 Supporting Information Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches Yu Zhang, Xiaoyang Lin, Jean-Paul Adam, Guillaume Agnus, Wang Kang, Wenlong Cai, Jean-Rene Coudevylle, Nathalie Isac, Jianlei Yang, Huaiwen Yang, Kaihua Cao, Hushan Cui, Deming Zhang, Youguang Zhang, Chao Zhao, Weisheng Zhao*, and Dafine Ravelosona Supporting Note 1: Crystalline structure analysis of the MgO and CoFeB layers of MTJ Figure S1. The crystalline structure analysis of the MgO and CoFe(B) layers of MTJ. The region in Figure 1c is marked by the blue dash rectangle. The original image (a) were firstly processed by a Gaussian filter (not showed), and then the Fast Fourier transformation (FFT) diffraction patterns (b, d, f) were obtained and finally, the crystalline lattice patterns (c, e, g) after the inversed Fast Fourier transformation. Supporting Note 2: ON/OFF ratios in the Re-MTJ devices 19 Figure S2.Resistance vs current in the Re-MTJ devices. High ON/OFF ratios were obtained, such as the two examples shown here that were measured on the same wafer: (a) 1000% and (b) 766%. The ratio most likely depends on the oxidation state of the Si filaments for each device. The arrows indicate the current sweep direction. Supporting Note 3: Magnetic properties of the unpatterned magnetic tunnel junction films The magnetization curves were measured using a MicroSense vibrating sample magnetometer system at room temperature. Figure S3. In-plane magnetization curves of the unpatterned films. (a) Hysteresis loop for the MTJ structure. The magnetic configurations of the free (F), reference (R) and pinned (P) layers are indicated by arrows. The switching of the free layer is indicated in red. (b) Minor loop corresponding to the switching of the free layer. Supporting Note 4: Characterization of O element on the edge of Re-MTJ device 20 Figure S4. (a) HAADF STEM image near the vertical edge of the MTJ nanopillar. The regions of the hard mask, top electrode and bottom electrode are indicated by the red dashed rectangles. (b) EDS mapping of O element according to the same region indicated in (a). Supporting Note 5: The resistance gaps between LRS+AP and LRS+P Figure S5. Time-independent resistance curves showing the non-volatile features of the Re- MTJ for two resistance states (LRS+AP and LRS+P) when the Si filaments are conductive. The curves are plotted with the same data as Figure 5c. Supporting Note 6: Device nanofabrication and sample preparation for TEM The Re-MTJ devices were patterned using a self-aligned lift-off and back-end-of-line (BEOL) process. Submicron-sized ellipses were obtained using EBL with a ZEP520A positive resist deposited on top of a 150 nm Ta layer, followed by Pt deposition and a lift-off process. The Pt 21 patterns were used as a protective mask to etch down the 150 nm Ta layer using inductively coupled plasma (ICP). Then, the Ta patterns were used as a hard mask to etch down the MTJs using an optimized IBE process to avoid sidewall redisposition. A VM652 promoter and Accuflo T-25 Spin-on Polymer (produced by Honeywell) were sequentially spin coated, followed by a low-temperature curing process (below 300 °C) for encapsulating the patterned structure in the SiOx. The encapsulation layer was patterned into 40 60 μm  2 elements using ICP. Finally, Cr/Au top electrodes were fabricated utilizing a lift-off approach. The cross-sectional samples were prepared by using a focused ion beam in the plane of the long axis of the ellipse. The HRTEM, scanning TEM (STEM) and EDS mapping/line scanning were performed using a JEM-ARM-200F transmission electron microscope operating at 200 KeV. 22
1711.01778	1	1711	2017-11-06T08:23:35	Optical wireless link between a nanoscale antenna and a transducing rectenna	[ "physics.app-ph" ]	Initiated as a cable-replacement solution, short-range wireless power transfer has rapidly become ubiquitous in the development of modern high-data throughput networking in centimeter to meter accessibility range. Wireless technology is now penetrating a higher level of system integration for chip-to-chip and on-chip radiofrequency interconnects. However, standard CMOS integrated millimeter-wave antennas have typical size commensurable with the operating wavelength, and are thus an unrealistic solution for downsizing transmitters and receivers to the micrometer and nanometer scale. In this letter, we demonstrate a light-in and electrical-signal-out, on-chip wireless near infrared link between a 200 nm optical antenna and a sub-nanometer rectifying antenna converting the transmitted optical energy into direct current (d.c.). The co-integration of subwavelength optical functional devices with an electronic transduction offers a disruptive solution to interface photons and electrons at the nanoscale for on-chip wireless optical interconnects.	physics.app-ph	physics	Optical wireless link between a nanoscale antenna and a transducing rectenna Arindam Dasgupta, Marie-Maxime Mennemanteuil, Mickaël Buret, Nicolas Cazier, Gérard Colas-des-Francs and Alexandre Bouhelier* Laboratoire Interdisciplinaire Carnot de Bourgogne, CNRS UMR 6303, Université de Bourgogne Franche-Comté, 9 Avenue A. Savary, 21000 Dijon, France e-mail : [email protected] Initiated as a cable-replacement solution, short-range wireless power transfer has rapidly become ubiquitous in the development of modern high-data throughput networking in centimeter to meter accessibility range1. Wireless technology is now penetrating a higher level of system integration for chip-to-chip and on-chip radiofrequency interconnects2. However, standard CMOS integrated millimeter-wave antennas have typical size commensurable with the operating wavelength, and are thus an unrealistic solution for downsizing transmitters and receivers to the micrometer and nanometer scale. In this letter, we demonstrate a light-in and electrical-signal-out, on-chip wireless near infrared link between a 200 nm optical antenna and a sub-nanometer rectifying antenna converting the transmitted optical energy into direct current (d.c.). The co-integration of subwavelength optical functional devices with an electronic transduction offers a disruptive solution to interface photons and electrons at the nanoscale for on-chip wireless optical interconnects. Conventional radiowave and microwave antennas operate a bilateral energy conversion between electrical signals and electromagnetic radiations. Integration of these antennas to modern consumer electronics is thus widely adopted for long-range and short-range data transfer. Vivid examples are communication between mobile devices and remote biosensors for healthcare providers3,4. Similar sub-wavelength interfacing of optics and electronics is envisioned as an archetype to reduce the size of communication devices while maintaining their necessary speed and bandwidth5,6. This is a daunting task as state-of-the-art electronics is unable to respond to the fast alternating fields associated to optical frequencies and the size of photonic components remains orders of magnitude larger than their electronic counterparts. Until now, optical antennas have been mainly limited to interfacing near-field and far-field radiation by tailoring the momentum of light7. In 2010, A. Alù and N. Engheta theoretically proposed an optical wireless channel between two nano- scale antennas8. The idea was partially demonstrated by beaming either an excitation signal towards a distant luminescent receiver9 or by the mediation of surface plasmons10. Despite an optimization with highly directive antennas11,12, the link operates on the basis of a light-in and light-out configuration without transduction of the transferred optical energy to an electronic signal. Recent progresses show that tunneling nonlinearity in the conduction of an atomic scale tunnel junction can rectify the plasmonic response at optical frequencies to d.c. current13-17. Immediately, these rectifying antennas or rectennas, appear as essential ultrafast devices for merging optics and electronics at the nanoscale. Here, we exploit these functionalities on a single platform to realize an optical wireless power transmission between an illuminated nanoscale dipolar antenna and a rectenna. Figure 1a illustrates the line-of-sight optical channel presented here. The transmitter is a laser- illuminated gold nanodisk acting as an optical dipole antenna. The radiation broadcasted by the antenna is detected and converted to a d.c. current by an electrically biased rectenna. An optical image of the units is shown in Fig. 1b. The Au electrodes powering the rectenna feed-gap and a series of optical antennas (black dashed box) are readily seen with a dark contrast. The tunneling feedgap of the rectenna is formed by electromigration18. Figure 1c is a scanning electron microscopy (SEM) image of the white dotted box in Fig. 1b showing the in-plane tunneling junction together with an adjacent optical antenna. The electrical characterization confirms the presence of a tunneling transport (see methods section). The optical antennas have a fixed diameter of 230±10 nm and are resonant with the excitation wavelength19. The devices are immersed in a refractive index matching oil to operate the link in a homogenous environment. Figure 1 Concept and the device characterization. a, Schematic illustration of the optical wireless transducing link: an optical antenna is excited by a focused laser beam. The energy radiated by the transmitter antenna is detected and converted to an electrical signal by a distant electrically biased receiving rectenna. b, Optical transmission image of the functional units. The white dotted box highlights the feed-gap of the rectenna and the black dotted frame contains a series of transmitter optical antennas placed at different distances to the rectifying gap. c, SEM image of the region highlighted by the white dotted rectangle in b featuring a rectifying nanoscale feed-gap between two gold electrodes. d, Plot of the variation of the amplitude of the rectified photocurrent Iphot 2) (line (data points) and of the current proportional to the nonlinearity of junction's conductance I''=1/4(Vac plots) as a function of applied bias Vdc and for three direct excitation intensities of the rectenna illuminated by a focused 785 nm laser. The shared trends between Iphoto and I'' confirm an optical rectification mechanism. The upper graph shows the evolution of the differential conductance dG of the tunnel feed-gap with Vdc. 2 ∂ I/ ∂V 2 Let us assume a tunnel junction where the conduction mechanism remains the same over a pulsation range 2ac The junction produces a d.c. current I(Vdc) when a bias of V=Vdc is applied between the two metal leads. If a small a.c. bias Vac of frequencyac is superposed to Vdc, the total current through the junction can be expressed by a Taylor's expansion20 The time-independent term in Eq. 1 indicates the presence of an additional rectified current I'', which is proportional to the nonlinearity of the conductance ∂2I/ ∂V2 and V2 ac, I''=1/4Vac 2 (∂2I/ ∂V2). To describe optical rectification, a quantum mechanical treatment is generally used21. When the rectenna is illuminated with light of energy , the response builds up an a.c. voltage Vopt of pulsation across the junction. This optical potential triggers a photon-assisted tunneling of electrons to produce a d.c. photocurrent in addition to the I(Vdc). If eVopt<< , the rectified d.c. photocurrent is given by22,23 )1(2cos41cos41)(cos2/1cos)(2222222222tVVItVVIVVIVItVVItVVIVIIacacVacacVacVdcacacVacqcVdcdcdcdcdcdc For gold and for an excitation energy < 2 eV, the tunneling transmission remains smooth within the range EF  , where EF is the Fermi energy13. Therefore, Eq. 2 reduces to its classical form Iphot=1/4Vopt 2(∂2I/ ∂V2) with Vopt = Vac and Iphot=I''.13,24 We use a low frequency a.c. voltage and lock-in detection to record the differential conductance dG=∂I/∂V, the current proportional to the nonlinearity ∂2I/∂V2 and the laser-induced current Iphot 13,14,20. The description of the complete measurement system is included in the methods section. The plot of differential conductance of the junction dG (Vdc) in the inset of Fig.1d features a zero bias conductance of about 10 µS (≈0.13 G0) where G0 is the quantum of conductance (77.5 S). Using Simmons' model25, we qualitatively estimate the gap width to be < 0.5 nm (see supplementary info). In Fig. 1d, we plot the bias dependence of I'' (line) and Iphot (points) for three laser intensities directly focused on the rectenna feed-gap. For each excitation intensity, Vac is adjusted to obtain Iphot=I'' , indicating that the optical voltage generated across the feed-gap equals the low frequency voltage applied between the electrodes13. From the graph it is evident that Iphot follows I'' suggesting the photocurrent generated at the rectenna results from optical rectification. Additional experiments to rule out any thermal contributions are presented in supplementary information. In the following section, we assess the operation of a wireless link when a remote optical antenna is broadcasting a signal towards this transducing rectenna. Figure 2a shows a pixel-by-pixel reconstructed photocurrent map generated by the rectenna. The laser excitation is polarized along Y axis (0°) and the sample is scanned through the focal area (step size 70 nm). Vdc is fixed at 50 mV and the laser intensity at 353 kWcm-2. The important conclusion drawn from the current map is the presence of a rectenna response whenever the laser excites a remote optical antenna with a range exceeding several micrometers. When the polarization is turned by 90° (X-axis), the photocurrent generated at the rectenna vanishes nearly completely (Fig. 2b). To confirm the transduction of the signal radiated by the optical antennas, we station the laser on an optical antenna 4 µm away from the  Figure 2 Polarization response of the optical rectenna receiving an electromagnetic signal emitted from individually excited optical antennas. a, Photocurrent map generated by the rectenna reconstructed pixel-by-pixel by scanning the optical antennas through the laser focus. The scanned region is indicated by the black dotted rectangle in Fig. 1b. The incident polarization is along the vertical direction (0) for excitation intensity of 353 kWcm-2. b,The same region for an incident polarization along the horizontal direction (90). Vdc is constant at 50 mV. c, Plot of Iphot and Vopt as a function of incident polarization for individual excitation of a nanodisk which is 4m away for an excitation laser intensity 540 kWcm-2. rectenna (2nd antenna from the right in Fig. 1b) and simultaneously monitor Iphot and I'' as a function of Vdc while varying the polarization. The intensity of the laser is here 540 kWcm-2. For all the incident polarizations, Iphot follows I'' proving thus the Iphot signal is optically rectified (see supplementary info.). The value of Vac for conditioning Iphot=I'' is recorded as a measure of the optically induced a.c. voltage Vopt at the feed-gap. The evolution of Iphot and Vopt as a function of the incident laser polarization is plotted in figure 2c for a bias Vdc=50 mV. It is clear that rectification process is suppressed as the polarization is turned by 90o. To verify that Iphot does not originate through any optically-induced changes of the conductance19, we map dI/dV at the frequency of the optical chopper (see supporting info). No measurable contrast can be related to the photocurrent maps presented in Fig 2a. Numerical simulations based on a three-dimensional finite element method (3D-FEM) bring an understanding of the polarization dependence of the rectified signal. The rectenna is modeled by two Au triangles separated by a distance of 10 nm except at the middle where a small protrusion on the bottom electrode reduces the gap size to 0.5 nm. A 220 nm diameter Au nanodisk is placed 4 m away from the feed-gap. The entire geometry is placed inside a homogeneous medium of refractive index 1.52. When excited by a linear polarization at 785 nm, the disk behaves as a dipolar resonant Figure 3 Numerical simulations of the polarization dependence of the wireless power transfer. a, Schematic of the operation principle of the wireless link when a transmitting antenna is illuminated with a laser polarized along y-axis. For this incident polarization, the dipolar radiation from the nanodisk is directed towards the receiving antenna. b, Calculated distribution of the electric field, plotted in log scale, for an incident polarization along y- direction. The white circle indicates the size of the excitation spot, here considered as 1 µm in diameter. c, Zoomed image of the electric field distribution present at the feed-gap of the rectenna. d, Same configuration with an incident polarization along x-axis. The disk radiates in the orthogonal direction and hence the rectenna receives minimum amount of the transmitted energy. e, and f, are the electric field maps for an incident polarization along the x-axis. For clarity, the electric field in f is multiplied by a factor 5. The optical electric field created at the gap decreases drastically when the signal emitted by the antenna is not directed toward the rectifying feed-gap. antenna radiating its characteristic two-lobe pattern perpendicularly to the incident electric field. Figures 3a and d are schematic representations picturing the dipolar radiation for two orthogonal in- plane polarizations. Figure 3b is the calculated electric field distribution plotted in logarithmic scale when the antenna is illuminated (the white circle indicates the excitation area) with a polarization along the y-axis. Clearly, the optical antenna redirects the far-field radiation towards the rectenna feed-gap. The interaction of this radiation with the tunneling gap results in a very high electric field at the junction, enhanced by a factor of approximately 18 compared to the excitation field, which is illustrated in the zoomed-in electric field map in Fig. 3c. When the dipolar radiation is broadcasted perpendicularly to the receiver (Fig. 3d), the electric field at the junction is minimal (Fig. 3e and 3f), explaining the vanishing photo-response of Fig. 2d. When a transmitter and a receiver constituting a wireless link are separated by a distance d, the received power is given by Friis equation26, Pfed is the power fed to the transmitter, ex is the operational wavelength, r and t are the radiation efficiencies, Dr and Dt are the directivities, r andtare the reflection coefficients, ar and at represent the polarizabilities of the receiving and the transmitting antennas, respectively. We first analyze the distance dependence of the optical wireless link. The evolution of the amplitude of the rectified current is plotted in Fig. 4a as a function of the distance d separating the antenna to the receiving rectenna. Iphot (data points) is fitted with a generic power law function adb+c where a represents the coupling strength between the two units and c is the dark photocurrent of the device (≈0.32nA). The best fit gives an exponent b=-1.8, which is close to the expected inverse square law dependence (Eq. 3). The slight mismatch may be due to the inevitable deviations in the antenna geometry, misalignment and interferences due to the presence of other antennas in the line-of-sight (see suppl. info). We also record the evolution of Vopt as a function of d, which is shown as the red plot in Fig. 4a. This is done by focusing the laser individually on each antenna and varying Vac to equalize Iphot and I'' for a sweep of Vdc across -0.1 V to 0.1 V(see the supplementary info.). The data are also fitted with a power law with a similar expression. Here c again indicates the noise level, which comes around 6.5 mV. The best fit gives b= -0.85 (red solid plot), which is close to -1. This is expected, as Iphot is proportional Vopt 2 (Eq. 2). In the supplementary information, we corroborate the experimental distance dependence with FEM based numerical simulations by calculating the junction's electric field as a function of d. As indicated in Eq.3, the amount of power transferred not only depends on the distance, but also on parameters that are influenced by the geometry of the antenna7,27. We thus explore the )3(4112222fedextrtrtrtrrPdaaDDP Figure 4 Characteristics of the optical wireless power transfer. a, Dependence of Iphot and Vopt on the distance between the illuminated optical antenna and the rectenna for an excitation intensity of 352 kW .cm-2. The solid black and red plot indicates the best fit obtained by using a generic power law function (db+c). For comparison, d-2 and d-1 dependences for Iphot and Vopt are also shown as black and red dashed plots, respectively. b, Plot of Iphot as a function of excitation laser intensity for all the antennas. The data are recorded for Vdc=50 mV. influence of the gap size g, and the effect of an off-resonant antenna. These results together with an estimate of the transduction yield of the interconnect are also presented in the supplementary. Finally, we plot in Fig. 4b the dependence of measured rectified photocurrent on the excitation laser intensity for each remote transmitting antenna for Vdc= 50 mV. Regardless of the distance, the photocurrent scales linearly with the power fed to the optical antennas in agreement with Eq. 3. In conclusion, we demonstrate an on-chip nanoscale optical wireless link between an laser-illuminated optical antenna and a transducing rectenna. In our experiments, gold nanodisks act as a polarization- sensitive transmitting antenna broadcasting the laser radiation towards the rectifying gap antenna. The amount of power transferred maintains an inverse square relation with the distance between the transmitting antenna and the rectenna. In addition to this, the geometrical properties of the participating units contribute to the yield of power transfer. Further improvement in the efficiency of transmission can be achieved by integration of highly directional optical antennas and a resonant feed. An integrated wireless transmission enables a new communication strategy between nanoscale devices where physical links cannot be implemented. The wireless link can immediately be applied to develop ultrafast optical switches. The plasmonic response of the rectenna results in a large enhancement of the optical field at its atomic scale feed-gap, which makes it an excellent candidate for realizing transistor operations. Transmission rates in excess of 1012 Mbs-1 are achievable as the plasmonic response of the gap is defined by the polarizability response of the metal and not by carrier life time as in semiconductors28. Recent progresses show that the electrically driven tunneling junctions can act as ultrafast broadband self-emitting devices29-31. Therefore, integration of wireless link between an electrically driven optical antenna with a transducing rectenna may enable ultrafast information broadcasting. Such devices will represent a paradigm for on-chip interfacing of electrons and photons at the nanoscale. References 1 Tse, D. & Viswanath, P. Fundamentals of wireless communication. (Cambridge university press, 2005). 2 Chang, M. F. et al. CMP Network-on-Chip Overlaid With Multi-Band RF-Interconnect. IEEE 14th International Symposium on High Performance Computer Architecture 191-202 (2008) 3 Ruiz-Garcia, L., Lunadei, L., Barreiro, P. & Robla, I. A review of wireless sensor technologies and applications in agriculture and food industry: state of the art and current trends. Sensors 9, 4728-4750 (2009). 4 Varshney, U. Pervasive healthcare and wireless health monitoring. Mobile Networks and Applications 12, 113-127 (2007). 5 Ozbay, E. Plasmonics: merging photonics and electronics at nanoscale dimensions. Science 311, 189-193 (2006). 6 Alduino, A. & Paniccia, M. Interconnects: Wiring electronics with light. Nature Photonics 1, 153 (2007). 7 8 Novotny, L. & Van Hulst, N. Antennas for light. Nature photonics 5, 83-90 (2011). Alù, A. & Engheta, N. Wireless at the nanoscale: optical interconnects using matched nanoantennas. Physical ReviewLetters 104, 213902 (2010). 9 Dregely, D. et al. Imaging and steering an optical wireless nanoantenna link. Nature Communications 5 (2014). 10 Merlo, J. M. et al. Wireless communication system via nanoscale plasmonic antennas. Scientific Reports 6, 31710 (2016). 11 Yang, Y., Li, Q. & Qiu, M. Broadband nanophotonic wireless links and networks using on- chip integrated plasmonic antennas. Scientific Reports 6 (2016). 12 Solís, D. M., Taboada, J. M., Obelleiro, F. & Landesa, L. Optimization of an optical wireless nanolink using directive nanoantennas. Optics Express 21, 2369-2377 (2013). 13 Ward, D. R., Hüser, F., Pauly, F., Cuevas, J. C. & Natelson, D. Optical rectification and field enhancement in a plasmonic nanogap. Nature Nanotechnology 5, 732-736 (2010). 14 Stolz, A. et al. Nonlinear photon-assisted tunneling transport in optical gap antennas. Nano Letters 14, 2330-2338 (2014). 15 Miskovsky, N. M. et al. Nanoscale devices for rectification of high frequency radiation from the infrared through the visible: a new approach. Journal of Nanotechnology 2012 (2012). 16 Mayer, A., Chung, M., Weiss, B., Miskovsky, N. & Cutler, P. Simulations of infrared and optical rectification by geometrically asymmetric metal–vacuum–metal junctions for applications in energy conversion devices. Nanotechnology 21, 145204 (2010). 17 Du, W., Wang, T., Chu, H.-S. & Nijhuis, C. A. Highly efficient on-chip direct electronic– plasmonic transducers. Nature Photonics 11, 623-627 (2017). 18 Park, H., Lim, A. K., Alivisatos, A. P., Park, J. & McEuen, P. L. Fabrication of metallic electrodes with nanometer separation by electromigration. Applied Physics Letters 75, 301- 303 (1999). 19 Mennemanteuil, M.-M. et al. Remote plasmon-induced heat transfer probed by the electronic transport of a gold nanowire. Physical Review B 94, 035413 (2016). 20 Tu, X. W., Lee, J. H. & Ho, W. Atomic-scale rectification at microwave frequency. The Journal of Chemical Physics 124, 021105 (2006). 21 Tucker, J. Quantum limited detection in tunnel junction mixers. IEEE Journal of Quantum Electronics 15, 1234-1258 (1979). 22 Tien, P. & Gordon, J. Multiphoton process observed in the interaction of microwave fields with the tunneling between superconductor films. Physical Review 129, 647 (1963). 23 Arielly, R., Ofarim, A., Noy, G. & Selzer, Y. Accurate determination of plasmonic fields in molecular junctions by current rectification at optical frequencies. Nano Letters 11, 2968- 2972 (2011). 24 Viljas, J. & Cuevas, J. Role of electronic structure in photoassisted transport through atomic- sized contacts. Physical Review B 75, 075406 (2007). 25 Simmons, J. G. Generalized formula for the electric tunnel effect between similar electrodes 26 27 separated by a thin insulating film. Journal of AppliedPphysics 34, 1793-1803 (1963). Collin, R. E. Antennas and radiowave propagation. (McGraw-Hill, 1985). Bigourdan, F., Hugonin, J.-P., Marquier, F., Sauvan, C. & Greffet, J.-J. Nanoantenna for electrical generation of surface plasmon polaritons. Physical Review Letters 116, 106803 (2016). 28 Sun, C. et al. Single-chip microprocessor that communicates directly using light. Nature 528, 534-538 (2015). 29 Kern, J. et al. Electrically driven optical antennas. Nature Photonics 9, 582-586 (2015). 30 Buret, M. et al. Spontaneous hot-electron light emission from electron-fed optical antennas. Nano Letters 15, 5811-5818 (2015). 31 ParzefallM et al. Antenna-coupled photon emission from hexagonal boron nitride tunnel junctions. Nature Nanotechnology 10, 1058-1063 (2015). Acknowledgements This work has been supported by the European Research Council under the European Community's Seventh Framework Program FP7/ 2007-2013 Grant Agreement No. 306772. Device fabrication was performed in the technological platform ARCEN Carnot with the support of the Région de Bourgogne. We thank I. Smetanin, O. Demichel for discussions, J. Dellinger for its initial implication in the setup, S. Pernot and B. Sinardet for developping part of the electronic unit. Author Contributions A.D. conducted the experiment, analyzed the data, and performed the simulations. M.M.M. developed the experimental and fitting procedures, N. C. and M. B. constructed the measurement apparatus to control the electromigration process, G.C.D.F. supervised the simulations. A.B. conceived the experiment and supervised the research. A. D. and A. B. wrote the manuscript, with revisions by all. Additional Informations Correspondence and requests for materials should be addressed to A.B. Competing financial interests The authors declare no competing financial interests. Methods Sample preparation The samples are prepared on a glass coverslip by double step lithography involving electron beam lithography (EBL) and photolithography. First the Au nanodiscs of diameter (220±10 nm), nanoscale constrictions of length 400nm and width 100nm between large triangular Au structures and alignment marks are fabricated by EBL. For this, we spin coat a 250 nm thick double layer PMMA (50kDa and 200kDa) and then sputter a sacrificial gold conductive layer on it to avoid charging during electron beam exposure. Once the PMMA is exposed and developed, a 2nm thick Ti as adhesion layer and 45nm thick Au are subsequently deposited through thermal evaporation. The excess metal is then lifted off to obtain the final nanostructures. Then the macroscopic gold electrodes are designed via standard optical lithography. During this step, alignment marks are used to align the samples coordinate with the coordinate system of the photolithography mask. Once the nanostructrures and electrical connections are fabricated, we produce the nanoscale gap-antenna by controlling the electromigration of the constriction. The electromigration is stopped once the zero bias d.c. conductance reaches to a value lower than quantum conductance (G0=77µS). The presence of a tunnelling gap is confirmed by its nonlinear I-V characteristics. Electrical and Optical measurements The schematic of the experimental setup we use for the optical and electrical characterizations, presented in the paper is illustrated in the supporting information. We focus the 785nm wavelength laser on the sample through an oil immersion objective lens of numerical aperture (NA) 1.49. During the whole experiment, nanostructures are immersed in refractive index (RI) matching oil of RI=1.52. For electrical measurements, the sample is biased with an applied d.c. bias Vdc added with a small modulation a.c. voltage Vaccos1t at Vac=20mV where f1=1/2π = 12.37 kHz is the modulation frequency. A first lock in amplifier referenced at f1 and 2f1 is used to simultaneously record the first harmonic (I/V) and second harmonic (1/4 Vac 2 2I/V2), of the current tunneling through the gap. The first harmonic is proportional to the differential conductance and second harmonic signifies nonlinearity in the junction's conductance. To extract the laser-induced current Iphot the laser beam is chopped by a chopper at frequency fchop= 831 Hz and the tunnelling current is demodulated at fchop using a second lock-in amplifier. Therefore with this arrangement, I(Vdc), ∂I/∂V, ∂2 I/∂V2 and Iphot can be measured simultaneously as a function of Vdc. For mapping, the sample is scanned through the laser spot by the moving the sample with a linearized piezoelectric stage. Supplementary Information Optical wireless link between a nanoscale antenna and a transducing rectenna Arindam Dasgupta, Marie-Maxime Mennemanteuil, Mickaël Buret, Nicolas Cazier, Gérard Colas-des-Francs and Alexandre Bouhelier* Laboratoire Interdisciplinaire Carnot de Bourgogne, CNRS UMR 6303, Université de Bourgogne Franche-Comté, 9 Avenue A. Savary, 21000 Dijon, France. *e-mail : [email protected] S1. Description of the experimental setup The experimental setup is built on an inverted microscope (Nikon). A 785nm wavelength laser is focused on the sample through an oil immersion objective lens with a 1.49 numerical aperture (NA). During the whole experiment, the nanostructures are immersed in refractive index (RI) matching oil of RI=1.52. For electrical measurements, the sample is biased with an applied dc bias Vdc added with a small modulation ac voltage Vaccosact at Vac=20mV where fac=ac/2π = 12.37 kHz is the modulation frequency. A first lock in amplifier referenced at fac and 2fac is used to simultaneously record the 1st harmonic (I/V) and 2nd harmonic (1/4 Vac 2 2I/V2), of the current through the gap. The 1st harmonic is proportional to the differential conductance and 2nd harmonic signifies nonlinearity in the junction's conductance. To extract the laser-induced current Iphot the laser beam is chopped by a chopper at frequency fchop= 831 Hz and the tunnelling current is demodulated at fchop using a second lock-in amplifier. Therefore with this arrangement, I(Vdc), ∂I/∂V, ∂2I/∂V2 and Iphot can be measured simultaneously as a function of Vdc. Also in relevant cases, for monitoring the laser induced change in the differential conductance, we demodulate the I/V signal at the frequency of the chopper fchop. For mapping, the sample is scanned through the laser spot by the moving the sample with a linearized piezoelectric stage. Figure S1 schematically represents the experimental arrangement. Figure S1 Schematic representation of the experimental arrangement for optical and electrical characterization S2. Gap size estimation using Simmons' model We estimate the gap width of the electromigrated tunnel junction by analyzing the experimentally recorded nonlinear I-V characteristics using the general expression to calculate the tunneling current through metal-insultor-metal (MIM) system provided by John G. Simmons.1,2 Figure S2a is an energy diagram illustrating the electron tunneling through a MIM junction polarized by a bias Vdc. Here, , are the Schottky barrier heights of the metal on the left side and the right side of the MIM interface and EF represents the Fermi energy. Following the interpretation provided by Brinkman et al, the simplified expression for the tunneling current (I) through such a junction is given by,3 Where, and in eV represent the average barrier height and the asymmetry in the barrier height on the both side of the MIM junction. In the equation S1, A in nm2 is the cross- section of the junction and g in Å is the gap width. In our experiment, we expect a very minimal asymmetry in the barrier height over the gap since the material on both sides is similar. However, a residual asymmetry is generally observed4,5, which probably results from a geometry-dependent modification of the barrier height6. In general, for bulk Au-SiO2 interface the height of the Schottky barrier is around 4.5eV as SiO2 has an electron affinity of 0.75eV7. However, in case of atomic scale MIM gaps, formation of image charges at the metal- insulator interfaces result in significant lowering of the height of the barrier8-10. Likewise, the Ti adhesion layer evaporated between the glass substrate and the Au may form an oxide, which would also reduce the effective barrier height. Based upon a representation of the I-V characteristics in the form of a Fowler-Nordheim plot, Frimmer et al. suggested a tunneling transport through the TiO2 11. However, interpretation of transition voltage spectroscopy as a measure of the barrier height is debated12. 1025.1exp1064.1109.51014.334254SgVgVgVAIdcdcdc22121We include all these aspects into our calculation to estimate all the parameters (g,and) by fitting the experimentally recorded I-V characteristics curve with equation S1 upon fixing the cross section area A to a constant value. It is experimentally difficult to infer A as electron microscopy provides a general configuration of the junction but failed to indicate where tunneling is really occurring. Figure S2b shows the fitting (red plot) of the experimentally recorded I-V plot (black data points) assuming a cross-section of 100 nm2 (an active area which is 10 nm thick and 10 nm wide) which results in an estimation of the gap width g=3.99Å with and -0.59eV. In Fig. S2c, we plot the evolution of all the parameters as a function of various cross section areas. From these calculations, we conclude that the tunneling gap has a width lower than 5 Å. Figure S2 Estimation of the electromigrated junction gap width. a Energy diagram illustrating the electron tunneling through an atomic scale MIM junction under applied bias Vdc. b nonlinear I-V characteristics of the electromigrated junction used in our experiment. The black data points represent the experimentally measured I- V characteristics of the junction. The red plot is the Simmons' formula fit of the experimental data with fitting parameters A=100 nm2,  eV, =-0.59eV and g=3.99Å. c Evolution of all the fitting parameters (and g) as a function of cross section area A. The points highlighted by yellow color indicate the set of parameters obtained from the fit represented in Fig. S2b. S3. Characterization of thermal contributions in optically rectified current As discussed in the main manuscript, optical rectification process takes place when the feed-gap receives a radiation, either by a direct illumination or via the mediation of a distant antenna. When the junction is directly illuminated, the photocurrent can be largely dominated by laser-induced thermal effects i.e., thermal expansion of the metallic electrical leads forming the gap and building up of thermo-voltage13,14 as well as tunneling from photo-excited carriers crossing the barrier height 15. Laser-induced thermal contributions are expected when the metallic electrodes absorb part of the incoming energy flux and may be observed in Iphot map4,13 even if the feed-gap is outside the excitation area. Let us consider first a laser-induced expansion of the Au electrodes resulting in a reduction of the gap width. The rise in the electrical conductance of the device leads to an increased current flowing through the circuit whenever the laser is positioned on the metallic electrodes. The exact contribution depends on the absorption cross-section of the electrode receiving the incoming light. Furthermore, the absorption of the laser by either of the electrodes creates a temperature gradient across the feed gap leading to a built-up thermo-voltage. However, when the gap is symmetrically illuminated with a centered laser beam, the temperature on both sides is approximately the same and the thermoelectric response is mitigated. Therefore, the effect of a thermo-voltage should be predominant in the Iphoto map when the laser is positioned on the metal electrode away from the junction. Direct illumination of the feed-gap To confirm that the measured photocurrent is created through an optical rectification process, we perform a series of experiments to characterize and rule out these thermal effects. First, we record a photocurrent map by scanning the feed-gap through the focused spot at an applied bias Vdc=0V. As can be seen from the map in Fig. S3a, we observe approximately zero photocurrent when the laser is exactly focused on the gap. This is expected as at Vdc=0 V, the nonlinearity of the conductance is small and the rectification is thus minimal (Iphot=1/4Vopt 2(∂2I/ ∂V2) as discussed in main manuscript). Also absence of a response in Iphoto at the gap suggests that any thermal expansion of the electrodes can be ruled out. Because the metal electrodes are physically strongly bound to the glass surface, thermal expansion is consequently negligible. Furthermore, the tapered geometry of the electrodes acts as a heat sink and is thus more efficient at dissipating the absorbed energy. In the light of the small but measurable asymmetry of the I-V characteristics, the absence of photocurrent when the feed-gap is illuminated also suggests that tunneling of photo-excited carriers above the energy barrier is an unlikely process contributing to the photocurrent. Figure S2a shows an inversion of the sign of Iphoto when the top or bottom electrode is irradiated by the focused laser. This inversion of the contrast is a clear signature of a thermo-voltage developing across the gap4,13,16. These signatures are also present in the Iphoto maps shown in Fig. S3b and c where applied biases are -50 mV and +50 mV. For nonzero applied biases, we observe an enhancement in Iphot response when the laser is positioned on the gap. The fact that the sign of the photocurrent at the gap follows the sign of the applied bias further proves that this is originated through optical rectification. Therefore, we can conclude from this experiment that when the metal-insulator metal junction is illuminated symmetrically with a centered laser beam, only optical rectification is predominant and recorded photocurrent is devoid of any thermal contributions from the laser. Figure S3 Photocurrent map for direct exposure of the electromigrated junction. a, Iphot map for a zero applied dc bias (Vdc=0 V). There is no sign of rectification when the laser is focused on the junction but thermally induced current is visible when laser is focused on one of the electrodes away from the junction. b, and c, are Iphoto map of the same area for an applied dc bias of Vdc=-50 mV and +50 mV respectively. For these, optical rectification is apparent when the laser is focused exactly on the gap. The rectified current follows the sign of the applied d.c. bias. Illumination of the transmitter antennas To complement the above experiment we monitor the change in I/V at fchop when adjacent nanoantennas are illuminated. Laser-induced thermal variation of the conductance should modulate the recorded photocurrent13. We simultaneously map the Iphot signal and I/V, both at fchop by scanning the laser through the area comprising the optical antennas as presented in Fig. S4a and b, respectively. The incident polarization of the laser is kept along the vertical axis for the entire experiment (maximized rectenna's detection). It is evident from these maps that we could not measure a change even down to 10-5 level in the conductance map which can be correlated to the recorded Iphot signal. Therefore, we can infer from this experiment that the recorded photocurrent when the nanodisks are illuminated is produced through the optical rectification of the transmitted radiation and not due to any laser-induced modulation of the junction conductance. Figure S4 : a Iphot map presented in Fig. 2a of the main manuscript. b Simultaneously acquired map of dI/dV demodulated at the frequency of the optical chopper. No measureable contrast in this image can be related to the Iphot map. This indicates that the photocurrent are devoided of any laser induced conductance change of the Au feed-gap. S4. Vopt vs incident polarization measurement. To measure the optically induced a.c. voltage drop Vac at the gap, we focus the laser on an individual optical antenna located 4m away from the junction and simultaneously monitor I'' and Iphot as a function of applied bias Vdc while varying the incident polarization from 0° to 90°. The laser intensity is kept at 540 kW cm-2 for the whole experiment. For each incident polarization, Vac is adjusted in such a way so that Iphot follows I'' for the entire Vdc sweep. This is only possible when the optical rectification is the main mechanism behind Iphot. The results are plotted in Fig. S5. Here data points represent the amplitude of Iphot and the lines are I'' for the corresponding cases. The value of Vac for which we obtain Iphot=I'' is recorded as the Vopt in the main manuscript. Figure S5 Vopt measurement. Evolution of Iphot and I'' for a Vdc sweep for different incident polarizations and a laser intensity of 540 kWcm-2. The data points represent Iphot and the lines represent I'' in each plot. For each polarization, Vac is tuned so that Iphot and I'' are of same amplitude. The value of Vac for conditioning Iphot=I'' is recorded as Vopt in the main manuscript. S5. Vopt vs distance measurement and transduction yield of wireless link. We record the Vopt as a function of distance as shown in Fig 4a. of main manuscript by individually focusing the laser on each of the antenna and varying Vac to obtain the situation when Iphot=I'' for the entire range of the sweep of Vdc across -0.1V to +0.1V. The experimental data for three nanodisks are shown in Fig S6. The transduction yield increases as we increase the applied d.c. bias to the junction. This is expected as the nonlinearity of the conductance of the rectenna increases as we raise Vdc. We also estimate the transduction yield, which is a measure of what fraction of the incident laser power is converted to electrical power through rectification. The transduction yield indBmcan be given by the following equation,  1)powerincident of 1(log10dBm)(in 2SmWGIphot where G is the conductance of the MIM junction. Figure S6 Variation of Iphot and I'' as a function of Vdc for three distant optical antennas We estimate -91 dBm for a radiation transmitted by the antenna situated 2 µm away and Vdc= 50mV. Raising Vdc to 100mV improves the transduction yield to -87 dBm. Here is the overall efficiency of the link including signal propagation and transduction. In radio-frequency wireless communication, the quality of the transmitted signal is evaluated by the received signal strength indicator (RSSI) measured at the reception node before transduction. RSSI comprised between -70 dBm to -100 dBm benchmark the transmission channel as good to fair. S6. Numerical simulations of distance and geometrical parameter dependence of the junction electric field at the rectenna feed-gap. Figure S7 Numerical simulation of the distance and geometrical parameter dependence of the junction electric field at the rectenna feed gap. Simulated results of the electric field amplitude at the feed-gap vs d for different combinations of gap widths and antenna diameters. The power law fits (line plots) always converge to an exponent close to -1. The field amplitude decreases as we increase the gap width and an off-resonant antenna (D=120nm) instead of the resonant one (D=220nm). We corroborate our experimental distance dependence of the rectified current and optically induced voltage drop at the junction (Fig. 4a of main manuscript) with 3 dimension- finite element method (3D-FEM) based calculation of the electric field created at the rectenna's feed-gap for varying distance d between the rectenna and the nanodisk. The normalized electric field produced at a gap size of 0.5 nm and a 220 nm transmitter antenna is presented in Fig. S7 (black data points). The power law fit to the distance dependence (black line) converges to an exponent close -1, which supports the experimental dependence of Vopt. As indicated in Eq. 3 in the main manuscript, the amount of power transferred not only depends on the distance, but also on parameters that are influenced by the geometry of the antenna17,18. We thus explore the influence of the gap size g, and the effect of an off-resonant antenna. Fig. S7 indicates that the electric field at the feed-gap is larger for sub-nm separation. However, our calculations do not take into account quantum-size effect19, which may limit the amplitude of the electrical field. Broadcasting the optical signal with a non-resonant antenna of diameter D=120 nm also leads to a reduced electrical field at the transducing feed-gap. The presence of other nanodisks in the path transmission is minimal and discussed in the following section. S7. Effect of the presence of other antennas in the line-of-sight. Figure S8 Effect of the presence of adjacent antennas in the path of transmission. a The electric field distribution around the nanostructures when a nanodisk at a distance of 6m is excited in presence of other nanodisks in the transmission path. b The red plot represents the electric field values derived when the calculation does not include any antennas placed in line-of-sight. The black data points represents the calculated electric field values when 5 nanodisks are always present in the simulation geometry and each of them is excited individually. In this section, we numerically estimate the effect of the presence of other nanodisks in the path of transmission towards the rectenna on the field localization at the rectenna feed-gap. For that, we place five antennas at incremental distances from the rectenna with a step size of 2 m. We calculate the normalized electric field at the junction by illuminating one of these antennas at a time with the vertical incident polarization. In Fig. S8a, we plot the calculated field distribution around the structures in logarithmic scale when an optical antenna located 6 m away from the feed-gap is excited. It is clear that the presence of the nanoparticles induces additional scattering of the field radiated from the excited element. In the plot of Fig. S8b, we compare the calculated electric field values (black data points) with the values (red plot) determined when the calculations do not include other disks in the line of sight (Fig. S7). The electric field decreases slightly and at maximum 17% reduction is observed for the disc which is 10m away from the junction. The transmitted radiation is thus shadowed due to the presence of scattering elements in the path to the rectenna, but the effect is minimal in this scenario. References 1 Simmons, J. G. Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film. Journal of Applied Physics 34, 1793-1803 (1963). 2 Simmons, J. G. Electric tunnel effect between dissimilar electrodes separated by a thin insulating film. Journal of Applied Physics 34, 2581-2590 (1963). 3 Brinkman, W., Dynes, R. & Rowell, J. Tunneling conductance of asymmetrical barriers. Journal of Applied Physics 41, 1915-1921 (1970). 4 Stolz, A. et al. Nonlinear photon-assisted tunneling transport in optical gap antennas. Nano Letters 14, 2330-2338 (2014). 5 Buret, M. et al. Spontaneous hot-electron light emission from electron-fed optical antennas. Nano Letters 15, 5811-5818 (2015). 6 Mayer, A. et al. Analysis of the efficiency with which geometrically asymmetric metal– vacuum–metal junctions can be used for the rectification of infrared and optical radiations. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 30, 031802 (2012). 7 Nobuyuki, F., Akio, O., Katsunori, M. & Seiichi, M. Evaluation of valence band top and electron affinity of SiO 2 and Si-based semiconductors using X-ray photoelectron spectroscopy. Japanese Journal of Applied Physics 55, 08PC06 (2016). 8 Binnig, G., Garcia, N., Rohrer, H., Soler, J. & Flores, F. Electron-metal-surface interaction potential with vacuum tunneling: Observation of the image force. Physical Review B 30, 4816 (1984). 9 Ma, X., Shu, Q., Meng, S. & Ma, W. Image force effects on trapezoidal barrier parameters in metal–insulator–metal tunnel junctions. Thin Solid Films 436, 292-297 (2003). 10 Nguyen, H., Q., Feuchtwang, T., E. & Cutler, P., H. Do tunneling electrons probe the image interaction? Journal de Physique Colloques 47, C2-37-C32-44 (1986). 11 Frimmer, M., Puebla-Hellmann, G., Wallraff, A. & Novotny, L. The role of titanium in electromigrated tunnel junctions. Applied Physics Letters 105, 221118 (2014). 12 Vilan, A., Cahen, D. & Kraisler, E. Rethinking transition voltage spectroscopy within a generic Taylor expansion view. ACS Nano 7, 695-706 (2012). 13 Ward, D. R., Hüser, F., Pauly, F., Cuevas, J. C. & Natelson, D. Optical rectification and field enhancement in a plasmonic nanogap. 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Bridging quantum and classical plasmonics with a quantum-corrected model. Nature Communications 3, 825 (2012).
1709.07927	2	1709	2017-09-26T06:19:36	Scaling Invariance and Characteristics of the Fragments Cloud of Spherical Projectile Fragmentation upon High-Velocity Impact on a Thin Mesh Shield	[ "physics.app-ph", "cond-mat.mtrl-sci", "cond-mat.soft" ]	In the present paper we consider the problem of the fragmentation of an aluminum projectile on a thin steel mesh shield at high-velocity impact in a three-dimensional (3D) setting. The numerical simulations are carried out by smoothed particle hydrodynamics method applied to the equations of mechanics of deformable solids. Quantitative characteristics of the projectile fragmentation are obtained by studying statistics of the cloud of fragments. The considerable attention is given to scaling laws accompanying the fragmentation of the projectile. Scaling is carried out using the parameter K which defines the number of the mesh cells falling within the projectile diameter. It is found that the dependence of the critical velocity Vc of fragmentation on the parameter K consists of two branches that correspond to two modes of the projectile fragmentation associated with the "small" and "large" aperture of the mesh cell. We obtain the dependences of the critical velocity Vc on the projectile diameter and the mesh parameters for the both modes of the fragmentation. It is shown that the average cumulative mass distributions constructed at Vc exhibit the property of scale invariance, splitting into two groups of distributions exactly corresponding to the modes of the projectile fragmentation. In each group, the average cumulative distributions show good coincidence in the entire mass region, moreover in the intermediate mass region the each group of distributions has a power-law distribution with an exponent tau different from that in the other group. The conclusion about the dependence of the exponent of the power-law distribution tau on the fragmentation mode is made.	physics.app-ph	physics	Scaling Invariance and Characteristics of the Fragments Cloud of Spherical Projectile Fragmentation upon High-Velocity Impact on a Thin Mesh Shield N.N. Myagkov Russia Institute of Applied Mechanics, Russian Academy of Sciences, Leningradsky Prospect 7, Moscow 125040, Abstract In the present paper we consider the problem of the fragmentation of an aluminum projectile on a thin steel mesh shield at high-velocity impact in a three-dimensional (3D) setting. The numerical simulations are carried out by smoothed particle hydrodynamics method applied to the equations of mechanics of deformable solids. Quantitative characteristics of the projectile fragmentation are obtained by studying statistics of the cloud of fragments. The considerable attention is given to scaling laws accompanying the fragmentation of the projectile. Scaling is carried out using the parameter K which defines the number of the mesh cells falling within the projectile diameter. It is found that the dependence of the critical velocity Vc of fragmentation on the parameter K consists of two branches that correspond to two modes of the projectile fragmentation associated with the "small" and "large" aperture of the mesh cell. We obtain the dependences of the critical velocity Vc on the projectile diameter and the mesh parameters for the both modes of the fragmentation. It is shown that the average cumulative mass distributions constructed at Vc exhibit the property of scale invariance, splitting into two groups of distributions exactly corresponding to the modes of the projectile fragmentation. In each group, the average cumulative distributions show good coincidence in the entire mass region, moreover in the intermediate mass region the each group of distributions has a power-law distribution with an exponent  different from that in the other group. The conclusion about the dependence of the exponent of the power-law distribution  on the fragmentation mode is made. Keywords: Projectile fragmentation, High-velocity impact, Modes of fragmentation, Scaling, SPH 1. Introduction Dynamic fragmentation of solids caused by impact or explosion has been studied for years [1–25]. Typical experimental situations in which these phenomena take place correspond to collisions of heavy nuclei in atomic physics [3, 4, 19, 20], collision of macroscopic bodies [1, 12, 16] (including projectile impact on a massive target [1, 17, 18, 23, 25]), shell fragmentation upon explosion [13], and projectile fragmentation upon high-velocity perforation of a thin shield [2, 5, 6, 8-11, 21, 22]. A possible critical behavior during fragmentation was originally analyzed in the framework of a problem of nuclear collisions at moderate energies [3, 4, 19, 20] using an approach based on the similarity of the observed distribution of fragments and that predicted by well-known theories of critical phenomena such as liquid–vapor transition and percolation. Later, these methods were applied to studying fragmentation in mechanical systems [8-10, 12-18, 24]. The existence of a critical transition from damage to fragmentation was confirmed for mechanical systems of various types both experimentally [14, 15] and numerically [8-10, 11-13, 16–18]. The transition from damage to fragmentation (or the degree of fracture) can be characterized in different ways, including the average fragment mass, mass of maximum fragment, fluctuations of the mass of largest fragment, etc. [3, 4, 12, 13, 19, 20]. In systems with impact interaction, a control parameter is usually selected to be the impact velocity or energy [8-10, 12–13] or the total number of fragments [3, 4, 14]. Experiments [1,3, 13-16,19, 23,25] and numerical simulations [7, 10, 12, 13, 16, 24] showed that the mass distribution of the fragments can be represented by a power function mmn ( ~) (1) in some non-negligible range of fragments mass variation. It is known that the relation (1) is a necessary but not sufficient condition for the critical behavior in fragmentation. In case of percolation the exponent happens to be τ > 2.0 in three dimensions [26]. Experiments on nuclear fragmentation yield values of τ consistent with this inequality [3,4], while experiments on fragmentation of brittle and plastic materials give values of τ both larger and smaller than 2.0 [7, 9, 10, 12-18, 23-25]. Experiments and numerical simulations have shown that there is a relationship between τ and effective dimension of the fragmented object, i.e. the exponent τ grows as the effective dimension increases [23]. Dependence of the exponent τ on the initial energy imparted to a fragmented object was obtained in experiments and numerical simulations (e.g., [11, 12, 15, 24]); it was found that the exponent τ increases with the initial energy. The authors of several papers (see, e.g., [24]) interpreted this behavior as an example that the fragmentation is not a self-organizing phenomenon, in contrast to the assumption made in a number of papers beginning with the well-known paper [25]. Generally speaking, it casts doubt on the critical nature of fragmentation, which was discussed in Refs. [7, 12, 13, 15-17]. Independence of the exponent τ on imported energy has been found in the studies [9, 13,16, 17, 25]. At the same time the dependence of τ on fracture criterion [9] or on constitutive equation of the material [17] was shown. Moreover, it was stated in Refs. [16, 18] that the apparent dependence of τ on the imported energy found in a number of works was related to misinterpretation of the results of measurements or numerical simulations. A distinctive feature of the present work is that the fragmentation has been numerically simulated using the complete system of equations of deformed solid mechanics (DSM) by the method of smoothed particle hydrodynamics (SPH) [27–29] in a three-dimensional (3D) setting. This approach, which has been previously used in Refs. [8, 9], allows one to verify conclusions based on molecular dynamics and discrete-element modeling widely used for solving the problems of fragmentation [12, 13, 16-18, 24]. When the projectile is fragmented on a thin continuous plate, a high degree of similarity of the simulation results is observed [8]. It is of interest to investigate an analogous problem for mesh shields. However, unlike the plate, an additional length parameter appears here, since the mesh cell is characterized by two parameters-the diameter of the wire and the aperture (the distance between the wires that is visible at the gap). The appearance of an additional parameter substantially complicates the problem; in particular, it requires more calculations. In the present work we consider the problem of the fragmentation of aluminum projectile on a thin steel mesh shield at high-velocity impact. Quantitative characteristics of the projectile fragmentation are obtained by studying statistics of the cloud of fragments. The considerable attention is given to scaling laws accompanying the fragmentation of the projectile. 2. Numerical simulation method and material model 2.1. Numerical simulation method. Numerical simulations in 3D geometry were based on the complete system of equations of DSM and performed using the SPH method implemented in LS-DYNA Version 971 program package [30]. Developed at the Livermore National Laboratory (United States), this software provides solution of 3D dynamic nonlinear problems of deformed solid mechanics. The LS- DYNA Version 971 program package includes SPH algorithm. An exhaustive review of SPH theory and application can be found in [27-29]. The simulations were performed for the spherical aluminum-alloy projectiles with the diameters of 6.35, 7.92 and 9.5 mm and the steel meshes with wire diameter dw = 0.6 mm and mesh cell apertures la from 0.6 mm to 2.2 mm. In all calculations the projectile motion line was perpendicular to the shield plane and was aimed at the node (intersection of wires) located in the center of the mesh shield. The number of SPH particles used by us in calculations for different projectile–shield pairs are presented in Table 1. The number of SPH particles in the shield depends on the geometric parameters of the mesh. To estimate the total number of particles, we showed in Table 1 the number of SPH particles for the shield that correspond to the mesh with parameters la x dw = 2.0 mm x 0.6 mm. Table 1. The number of SPH particles used in calculations. The projectile diameters Dprj (mm) The number of SPH particles in the projectile Total number of SPH 6.35 7.92 9.50 17269 35825 59757 particles in the projectile 27979 54455 78387 and shield In this paper, results of simulations are only presented for fragments of the projectile. This is related not only to the general pattern of fragmentation, which shows that the characteristic fracture times of projectile and shield are significantly different [8]. The problem of projectile fragmentation at high impact velocity on a shield is also related to the task of spacecraft protection from meteoroids and space debris. As is known [11, 21], this protection is usually based on a scheme, whereby a thin shield is placed in front of a wall to be protected. Fragmentation of a projectile (modeling a meteoroid or space debris) on the shield at high- impact velocities typical of space conditions leads to redistribution of the impact momentum over a larger area, thus reducing the probability of wall perforation. Therefore, the issue of projectile fragmentation is traditionally topical of spacecraft engineering. In all simulations, the calculations were performed up to the point in time when the distribution of fragments by mass could be treated as stationary. Depending on the size of the projectile, this time was stt = 50  70 μs after the impact. The initial data for the program of fragments search were the 3D coordinates of all SPH particles at the time stt . Another important characteristic in the search for fragments is the radius of influence infr that has the meaning of a maximum distance at which two particles can occur so as to belong to the same fragment. It should be recalled that, in SPH calculations, the initial conditions are usually set so that the SPH particles are located at vertices of a cubic lattice [27-30]. Following [9], the radius of influence in the present simulations was selected to be r  inf a 3 , where a is the cubic lattice constant. The results of the simulations were averaged over an ensemble (i.e., no less than 10) of simulations corresponding to the same value of the impact velocity. Average values of fragment masses, cumulative distributions, etc. were calculated. The average cumulative distribution was constructed from the averaged differential distribution. Calculations corresponding to the same impact velocity V differed from each other by perturbations introduced into the initial conditions through angular displacement of the projectile relative to its axis of rotation. 2.2. Material models The material models are similar to those used in Ref. [8]. Plastic flow regime is governed by the Prandtl-Reuss flow rule with the von Mises yield condition [30]. Mie-Gruneisen equation of state [31] and Johnson-Cook model [32] for the yield strength were taken as the constitutive equations. Data for the aluminum alloy and steel that we used in the calculations are shown in 0 - initial density of the material, K- bulk modulus, G - Table. 2, where they are specified with: p - tensile strength, k- factor in the shock adiabat D=c0+k*U, - Gruneisen coefficient, which was assumed to be constant, mT - melting temperature. In Table 2 the values p were taken from the spall strength measurements for the aluminum alloy AMG6 and the steel St.3 from Ref. [33]. Parameters for the Johnson-Cook model were taken from Ref. [32]. shear modulus, Table 2. Material parameters 0 ,g/c m3 7.85 2.71 Material Steel Aluminum alloy Ks, GPa G, GPa p , GPa k 166.7 72.8 76.9 27.3 1.66 1.15 1.49 1.34 Г 1.93 2.0 Heat capacity kJ/(kgK) 0.477 0.875 mT , 0K 1793 875 The fragmentation of the projectile in the range of impact velocities from 2 to 4 km / sec is considered in the present work. At impact velocities of more than 4.5 km/s [8], the melting of the projectile begins and other, more complicated equations of state to simulate the collision process of the projectile and the shield are required. 3. NUMERICAL SIMULATION RESULTS 3.1 Patterns of spherical projectile fragmentation on thin mesh shield Simulations (e.g., see Fig. 3 in [9]) and experiments [2, 5, 11] show that the character of projectile fragmentation upon impact on thin shield depends on the impact velocity. It is well known from ballistics data that a projectile perforates a thin shield at much lower velocities than those necessary for the projectile fragmentation. At somewhat lower impact velocities, the shield is perforated and the projectile is partly fractured, but the mass of minor spalled fragments of the projectile is much smaller than the mass of the main (dominating) fragment. This regime is conventionally referred to as damage of the projectile. At higher impact velocities, the projectile exhibits total disintegration and the mass of largest fragment becomes significantly smaller than the initial projectile mass, which is referred to as the regime of fragmentation. Thus, it can be suggested that a critical impact velocity Vc exists, above which (V > Vc) the fragmentation takes place. (b) t = 2 мкс (c) t = 6 мкс (a) t= 0.0 Fig.1 (a-d). Typical pattern upon the impact of aluminum projectile (6.35 mm diameter) at 3 km/s velocity on steel mesh (la x dw =2.0 mm x 0.6 mm). All figures are given on the same scale, for this (d) t = 50 мкс reason Fig. 2 (d) shows only the central part of the fragments cloud. (1) (a) (2) (a) (b) (b) (c) (c) Fig. 2. Numerical modelling in 2D geometry for fragmentation of polyethylene projectile on the steel string shield. Aperture of the string shield: (1) 3 mm; (2) 0.5 mm. Strings diameter is 0.5 mm. Impact velocity is 3 km/s. Time: (a) t = 0; (b) t = 2 ms; (c) t = 10 ms. The figure is taken from Ref. [11]. The simulation of the interaction of an aluminum projectile with a steel mesh at a velocity exceeding the critical one shows (Fig. 1) three main properties of the fragments cloud. Firstly, particles are ejected in the direction opposite to the direction of impact. This is so-called ejecta (Fig. 1b), whose mass is much less than the mass of the ejecta in the case of an impact on continuous shield. This observation, made on the basis of calculations, is confirmed experimentally [22]. Secondly, the projectile fragmentation is characterized by forming jets ejected from the front part of the projectile along and across its movement direction (Fig. 1c). Thirdly, the rear part of the projectile at long evolution times of the fragments cloud breaks up into several fragments, which are the largest fragments in the cloud (Fig. 1d). The last two properties are completely different from those observed in the interaction of the projectile with the continuous shield (see Fig. 1 of Ref. [8] or experimental works [5, 6]). However, as is shown by experiments and simulations [11] with meshes of different apertures, the fragmentation of the projectile on the mesh shields is characterized by both forming frontal jets and shock-wave fracture of the projectile rear part. The latter is inherent to projectile fragmentation on the continuous shield. After the contact of the projectile with the mesh wires the shock waves propagate from each wire deep into the projectile. After a while the shock waves merge together forming a joint shock wave. This shock wave is similar to that formed at projectile interaction with the continuous shield; however its intensity strongly depends on the mesh aperture: the intensity of the shock wave grows with decreasing aperture (the limiting case of zero apertures corresponds to the continuous shield). The joint shock wave is reflected from the free rear surface of the projectile that generates fracture of its rear part. That is visually demonstrated in Fig. 2 (1c) and (2c). The fragmentation of the projectile rear part in Fig. 2(2c) with aperture of 0.5 mm is similar to the fragmentation observed on the continuous shield. Therefore, the frontal fragmentation dominates at larger mesh apertures. But when the aperture lessens the part of projectile mass fragmented due to jets forming diminishes significantly and the shock-wave fragmentation of the projectile dominates. Which mode (mechanism) of the fragmentation dominates depends on ratio of the projectile diameter to the mesh period K= Dprj/( al + wd ), (2) and, generally speaking, depends on the ratio of the mesh cell aperture to the wire diameter  l a d / w . (3) The first parameter K defines the number of the mesh cells ( al + wd ) falling within the projectile diameter, the second parameter  characterizes the shield discreteness (for example, there is no spacing between the wires when  = 0, and the discrete shield may be regarded as a continuous one). Thus, in the case of the projectile fragmentation on the mesh shield, the solution depends on two dimensionless geometric parameters (2) and (3). In the present work, the results of simulations are presented for a fixed wire diameter of 0.6 mm. Therefore, we consider the solution depending on one dimensionless geometric parameter (2). Experiments on the interaction of the projectile with a continuous plate [5,6] with analogous h/Dprj ratios (h is the thickness of the plate) and close impact velocities showed that the morphology and internal structure of the clouds of fragments remain similar. This property is used in testing the shield protections intended for installation on the spacecraft (see, for example, [34]). For mesh shields, such a generally recognized similarity parameter, analogous to h/Dprj for continuous shields, has not yet been revealed. In fact, the work presented, following our experiments [11], tests the parameter (2) for this role. 3.2 Average fragment mass as function of impact velocity for various mesh shields. As was noted above, the fragmentation of a projectile requires that the impact velocity V would exceed the critical value (Vc). For quantitative characterization of the degree of fracture, it jM1 is a common practice to calculate the average fragment mass as jM 2 are the first and second moments of fragment mass distribution (4) in the jth simulation, where angle brackets 〈…〉 denote averaging over the ensemble (i.e., no less than 10) simulations , where j MM avrM = and   j 1 2 for the same value of impact velocity V. As was noted above, simulations with the same value of impact velocity V differed from each other by the angular perturbation introduced into initial conditions through angular displacement of the projectile relative to its axis of rotation. The kth kM of fragment mass distribution in the jth simulation is defined in a single moments j fragmentation event as [3, 12, 19, 20] VM ( j k ) ^  m k Vmnm , j   , (4) Vmn j  , is the number of fragments with mass m in the jth simulation at velocity V. Here, where the cap over sum in Eq. (3) denotes that the sum runs over all fragments, excluding the largest one produced in the event. ( M / avr m tot Fig. 3 shows the dependence totm is the projectile mass) on the impact velocity V for the projectile diameter Dprj = 6.35 mm and different mesh shields with the aperture la of 0.0 to 2.0 mm and the wire diameter dw = 0.6 mm (aperture la = 0.0 corresponds to the continuous shield). The peaks of the dependences correspond to the critical impact velocities Vc, at which fragmentation occurs [8]. ( ) avr max M m tot Fig. 4 shows the envelope of the peak values of the average fragment mass presented in Fig. 3 for projectile diameter Dprj = 6.35 mm, and for two other projectile diameters depending on the parameter K, which defines the number of the mesh periods falling within the projectile diameter (2). It is seen that everywhere decreases non-monotonically with increasing parameter K (by decreasing the aperture of the mesh cell), passing through the local minimum. The presence of a local minimum appears to be due to the two fragmentation modes that occur with "small" and "large" aperture values (see Section 3.1). m tot M max avr / / ( ) 50-55mks type 31 pr 6.35mm net 2.0x0.6mm S3 2.0x0.6 1.6x0.6 1.8x0.6 1.4x0.6 1.2x0.6 1.0x0.6 0.8x0.6 0.0x0.6 0.14 0.12 0.1 0.08 0.06 0.04 0.02 t o t m / r v a M t o t m / x a m r v a ) M ( 0 1.5 2 2.5 V, km/s 3 3.5 maxavr mass vs aperture Dprj=6.35 mm Dprj=7.92 mm Dprj=9.5 mm 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 5 10 K 15 20 4 avr m tot M / Fig. 3. Normalized average fragment mass ( ) vs. impact velocity V for the 6.35 mm diameter projectile and the mesh shields having different parameters al x wd (shown in the figure in mm). In figure totm is the projectile mass. Fig. 4. Envelope of the peak values of the average fragment mass ( for different diameters of the projectile (shown in the figure). ) vs. parameter K (2) m tot M max avr ) ( / In order to obtain a criterion separating "small" and "large" apertures, we proceed as follows. Let us change the scale of the curves in Fig. 4 along the abscissa axis by using the substitution Dprj/( al + wd )  (Dprj)/( al + wd ), where  is the fitting parameter. The best coincidence of the local minima of the curves is obtained for the value  = 1/4, thus we obtain (Dprj)1/4/( al + wd ) = 0.8 (mm-3/4). Hence the critical value of the mesh aperture is l ( ) ca  (25.1 D 4/1)  d w prj , (5) where the projectile diameter Dprj and the wire diameter dw must be taken in mm. Thus, we will assume that the values 0 < al < ( al )с correspond to "small" apertures, and al >( al )с - "large" apertures. For the projectile diameters of 6.35, 7.92 and 9.5 mm, we have from (5) ( al )с  1.4, 1.5 and 1.6 mm, respectively. 3.3 Critical impact velocity as function of mesh aperture and projectile diameter. In the general case, the dependences of the normalized average fragment mass avr m tot on the impact velocity V shown in Fig. 3, do not have scale invariance. However, for two groups of curves corresponding to "small" and "large" apertures, scaling still takes place. M / Fig. 5 shows that a collapse of the three curves taken from Fig. 3 (corresponding to the "large" apertures al = 1.6, 1.8 and 2.0 mm) can be obtained. The data presented in Fig. 5 is scaled with respect to coordinate axes by means of the transformation and M / K . The best result is obtained for the exponents  = 0.4 and  = M / V  VK ( ) avr m tot avr m tot 1.70. The collapse implies that ( M / avr m tot ) K is only the function of VK . From Fig. 5 we 4.0KVc obtain the relation = 3.70 km/sec for the critical impact velocity. From this, taking into account (2), we have the dependence of the critical velocity Vc on the aperture in the region of "large" apertures: Vc  7.3 K 4.0  or V c  k a1 l ( a  d w 4.0 ) , (6) where k1a = 1.8 km/sec(mm)-0.4. It can be seen that the critical velocity increases with increasing mesh aperture. For the curves in Fig. 3, corresponding to the apertures al = 1.2, 1.0, 0.8 and 0.0 mm, scale transformations allow one to match the maxima of the curves only on the abscissa axis as shown in Fig. 6. The best coincidence is obtained for the exponent  = 0.095. As a result we have the relation = 2.5 km/sec and the dependence of the critical velocity on the parameter K for "small" apertures in the form .0KVc 095 Vc  5.2 K .0  095 или V c  k l ( a  d ) w a2 095.0 , (7) where k2a = 2.1 km/sec(mm)-0.095. It is seen that in the case of "small" apertures, the critical velocity grows very slowly with increasing mesh aperture. collaps 0.8,1.0,1.2x0.6 mm D=6.35;  =  = 0.095, 0 50 mks 1.6;1.8x;2.0x0.6mm;  = 1 = 0.4, 1.7 1.0x0.6 1.2x0.6 0.0x0.6 0.8x0.6 0.7  K ) t o t m / r v a M ( 0.6 0.5 0.4 0.3 0.2 0.1 2.0x0.6 1.8x0.6 1.6x0.6  K ) t o t m / r v a M ( 0.06 0.05 0.04 0.03 0.02 0.01 0 1.5 0 2 3 4 VK 5 6 2 2.5 3 3.5 4 Fig. 5. Collapse of the three curves taken from Fig. 3 (the "large" apertures al = 1.6, 1.8 and 2.0 mm) obtained by rescaling the two axes with scaling exponents  = 0.4 and  = 1.70. VK Fig. 6. Rescaling the abscissa axis with appropriate power of parameter K for the four curves taken from Fig. 3 (the "small" apertures al = 1.2, 1.0, 0.8 and 0.0 mm) with scaling exponent α=0.095 (β=0). 2.8 2.6 2.4 s / m k , c V 2.2 2 1.8 2 4 6 K 8 10 12 Fig. 7. Comparison of the critical impact velocities obtained by the numerical simulation (o) and with the help of formulas (6) () and (7) (- - -) for the 6.35 mm diameter projectile. Fig. 7 shows the dependence of the critical velocity Vc on the dimensionless parameter K (2) obtained by numerical simulation with the 6.35 mm diameter projectile. In the figure, the curves of functions (6) () and (7) (- - -) are also drawn for comparison. On the upper branch () corresponding to the "large" apertures, besides the points corresponding to the mesh apertures al = 1.6, 1.8 and 2.0 mm (by which the dependence (6) was constructed), the points corresponding to the apertures al = 1.2, 1.4 and 2.2 mm are also plotted. On the lower branch (- - -) corresponding to small apertures, the points with apertures al = 1.2, 1.0, 0.8, 0.6 and 0.0 mm are located. The extreme right point on the lower branch ( al = 0.0 mm) corresponds to a continuous plate. The presence of a sharp bend (Fig. 7) in the dependence of the critical velocity on the parameter K (2) is associated with two fragmentation modes (see Section 3.1), which take place for "small" and "large" values of the mesh apertures. 1.0x0.6 all D s3; 1 = 2 = 1 = 2 = 0,0,0,0 Dprj=6.35 mm Dprj=7.92 mm Dprj=9.5 mm 0.12 0.1 0.08 0.06 0.04 0.02 ) t o t m / r v a M ( 1.0x0.6 all D s3; 1 = 2 = 1 = 2 = 0,0.166,0,1.54 x 10-3 Dprj=6.35 mm Dprj=7.92 mm Dprj=9.5 mm 8 7 6 5 4 3 2 1  K / ) t o t m / r v a M ( 0 1.5 2 2.5 V 3 3.5 0 1 Fig. 8. (a) Dependences of the normalized average mass of the fragments on the impact velocity V for the mesh shield with al x wd = 1.0 mm x 0.6 mm and the projectiles of different diameters (shown in the figure). (b) Rescaling the two axes with appropriate powers of the parameter K for the data taken from Fig. 8(a) with scaling exponents  = 0.166 and  = 1.54. avr m tot M / V/K 1.5 2 2.5 Let us consider the dependence of the critical velocity on the projectile diameter with the invariable mesh shield for the cases of "small" and "large" apertures. Fig. 8 (a) shows the dependence of the normalized average mass M / avr m tot of the fragments on the impact velocity V for the mesh shield with parameters al x wd = 1.0 mm x 0.6 mm and the projectiles with diameters of 6.35, 7.92 and 9.5 mm. The next Fig. 8 (b) shows the collapse of these dependencies, which is obtained by rescaling the two axes by means of the transformations K . The best result is obtained for KV M / M / / and ( V )/ avr m tot avr m tot the exponents  = 0.166 and  = 1.54. From Fig. 8(b) we obtain the relation =1.75 km/sec for the critical impact velocity. From this, taking into account (2), we have the dependence of the critical velocity Vc on the projectile diameter in the region of "small" apertures: / KVc 6/1 V  c Dk d2 ( prj ) 6/1 (8) where k2d = 1.6 km/sec(mm)-1/6. It is seen that in the case of "small" apertures, the critical velocity grows with increasing the projectile diameter. Combining (7) and (8), we obtain the dependence of the critical velocity on the projectile diameter and the mesh parameters for "small" apertures in the form V c (~ D 6/1)  l  ( a d w prj 095.0) (9) 2.0x0.6 all D s3; 1 = 2 = 1 = 2 = 0,0,0,0 Dprj=6.35 mm Dprj=7.92 mm Dprj=9.5 mm 0.2 0.15 0.1 0.05 t o t m / r v a M 2.0x0.6 all D s3; 1 = 2 = 1 = 2 = 0.75,0.7,0,0.8 0.07 0.06 0.05 0.04 2  K 1  H / ) t o t m / r v a M ( 0.03 0.02 0.01 0 1.5 2 2.5 V, km/s 3 3.5 4 0 0.4 0.6 0.8 VH1K2 1 1.2 1.4 Fig. 9 (a) Dependences of the normalized average mass of the fragments on the impact velocity V for the mesh shield with al x wd = 2.0 mm x 0.6 mm and the projectiles of different diameters (shown in the figure). (b) Rescaling the two axes with appropriate powers of the parameters K and H for the data taken from Fig. 9(a) with scaling exponents M / avr m tot 1 = 0.75, 2 =0.70, 1 = 0.0 and 2 = 0.8. Fig. 9 (a) shows the dependence of the normalized average mass M / avr m tot of the fragments on the impact velocity V for the mesh shield with parameters al x wd = 2.0 mm x 0.6 mm and the projectiles with diameters of 6.35, 7.92 and 9.5 mm. The scale transformations allow one to coincide only the peaks of the curves as shown in Fig. 9 (b). The scale transformations found , where the parameter K is have the form M / M /  KH V  and  K 1 VH )/ (  2  2 1 avr m tot prj , where taken from (2), the parameter H = effm is the effective mass of the shield al x wd = 2.0 mm x 0.6 mm the shadowed by the incident projectile [25]. For mesh shield calculations yield H = 0.090, 0.078 and 0.063 for the projectile diameters of 6.35, 7.92 and 9.5 mm, respectively. The best coincidence shown in Fig. 9(b) is obtained for the exponents 1 = 2 =0.8. Therefore, from Fig. 9(b) we obtain the relation = 0.8 km/sec and the dependence of the critical velocity on the parameters K and H 1 =0.0 and 2 =0.70, 0.75, 70.0 tot avr m eff Mm / 75.0 KHVc for "large" apertures in the form: cV Hk d 1 75.0  ( D prj ) 70.0  (10) where k1d = 1.56 km/sec(mm)0.7. It is seen that in the case of "large" apertures, the critical velocity increases with increasing diameter of the projectile as ~ and decreases with 55.1) ( prjD increasing effective mass of the mesh shadowed by the incident projectile as ~ ( effm 75.0)  . From (7) and (10) we obtain the dependence of the critical velocity on the projectile diameter and the mesh parameters for "large" apertures in the form cV ~ ( effm 75.0)  ( prjD 55.1) l  ( a d w 4.0) (11) 3.4. Weight-average fragment mass as function of impact velocity. Let us again turn to calculation of the average fragment mass, but this time with allowance for the largest fragment, and define the weight-average fragment mass as follows: m avr  j 2 VM ( VM ( 1 ) ) , (12) Here, the first (M1) and second (M2) moments are defied as VM ( j k )  m k Vmnm , j   . (13) where notation in the right-hand part is the same as in Eq. (4). The difference between Eqs. (4) and (13) is that in (13) the sum is taken over all fragments including the largest one. In this case, the first moment represents the total mass of fragments, which remains unchanged; M1 equals the initial projectile mass mtot and can be removed from averaging operator in Eq. (12). 50mks type 31 pr 6.35mm net 2.0x0.6mm S3 2.0x0.6 1.8x0.6 1.6x0.6 1.2x0.6 1.0x0.6 1.4x0.6 0.8x0.6 0 -0.5 -1 -1.5 -2 ) t o t m / r v a m ( 0 1 g o l )  K ) t o t 6.35 mm 1.6,1.8,2.0x0.6 mm;  =  = 0.6, 0 2.0x0.6 1.8x0.6 1.6x0.6 0 -0.5 -1 -1.5 -2 -2.5 0.4 0.5 0.6 0.7 log10(KV/V0) (б) 0.8 0.9 m / r v a m ( ( 0 1 g o l -2.5 0.1 0.2 0.3 0.5 0.6 0.7 0.4 log10(V/V0) (a) Fig. 10. The normalized weight-average fragment mass ( m / avr m tot ) vs. impact velocity V for the projectile diameter projD = 6.35 mm and the mesh shield with different parameter al x wd (shown in the figure in mm). V0 = 1 km/sec. Fig. 11. Rescaling the two axes with appropriate powers of the parameter K for the three meshes (shown in figure in mm) taken from Fig. 10 with scaling exponents  = 0.6 and  =0.0. velocity for the projectile diameter Fig. 10 shows the normalized weight-average fragment masses, depending on the impact projD = 6.35 mm and the various mesh shields. For the dependences in Fig. 10 only simulation results for meshes with the "large" aperture of 2.0 mm, 1.8 mm, 1.6 mm can be match by means of scale transformations. The result of rescaling is shown in Fig. 11. It can be seen that the rescaling the two axes with appropriate powers of the parameter K gives collapse of the curves with scaling exponents  = 0.6 and  =0.0. Thus, here the scale invariance occurs only for the normalized weight-average fragment masses of the meshes with "large" apertures. In the supercritical region (V > cV ), the data in Fig. 11 is approximated (with the of least square method) by a straight line. As a result, we have obtained that for V> Vc in the region of "large" apertures, the weighted average mass is m avr   6.0         +dl a D ( prj w 0)     V V 0      , (14) were  = -9.40.2, V0 = 1 km/s and ( prjD 0) = 6.35 mm. ) t o t m / r v a m ( 0 1 g o l type 31 net 2.0x0.6mm S3 Dproj = 7.92 mm Dproj = 9.50 mm Dproj = 6.35 mm 0 -0.5 -1 -1.5 -2 -2.5 0 0.1 0.2 0.4 0.3 log10(V/V0) 0.5 0.6 -2.5 0.1 0.2 0.3 log10((V/V0)/K) 0.4 0.5 avr m tot Fig. 12. The normalized average fragment mass ( ) vs. impact velocity V for the mesh shield with al x wd = 2.0 mm x 0.6 mm and the projectiles of different diameters (shown in the figure). V0=1 км/сек. Fig. 13. The normalized average fragment mass ( ) vs. impact velocity V for the mesh shield with al x wd = 1.0 mm x 0.6 mm after rescaling of the two axes with appropriate powers of the parameter K. The figure shows the best coincidence of the curves, which is observed with scaling exponents  =0.25 and  = 0.8. avr m tot M / 1.0x0.6 all D s3; 1 = 2 = 1 = 2 = 0,0.25,0,0.8 Dproj = 6.35 mm Dproj = 7.92 mm Dproj = 9.5 mm Slope -7.2 -0.5 -1 -1.5 )  K / ) t o t m / r v a m ( ( 0 1 g o l -2 M / Fig. 12 shows the normalized weight-average fragment masses, depending on the impact velocity for the projectile of various diameters and mesh with al x wd = 2.0 mm x 0.6 mm. It can be seen that in the supercritical region (V> Vc) the data corresponding to different sizes of the projectiles do not have a universal asymptotic behavior in the form . The power V mavr  exponent  depends on the projectile diameter, varying from -8.2 to -9.4. In contrast, in the region of "small" apertures for mesh with al x wd = 1.0 mm x 0.6 mm, it is possible to obtain good coincidence of the curves by rescaling the two axis with help of the parameter K (2). Fig. 13 shows the collapse of the curves, which is observed for the exponents  = 0.25 and  = 0.8. It can be seen that in the supercritical region (V> Vc), the data corresponding to different diameters of the projectile have approximately the same asymptotic form mavr  D 2.08.0   VV ( 0 / )  (15) with χ = -7.2. 3.5. Average cumulative fragment mass distributions. The mass distribution of the fragments is described by cumulative distribution mN ( )    m mdmn ( )   , (16) )  (mn is the number of the fragments with mass m. For a given impact velocity V, the was constructed using the differential distribution where average cumulative distribution obtained by averaging over a series of no less than ten simulations with the same V value. (mn ),( VmN As shown in experiments and numerical simulations, [1, 3, 7, 10, 12-16, 19, 23-25] has the form of the power function (1) at the critical and above the critical point Vc in some non- negligible range of fragments mass variation. In this range the cumulative distribution is  ) mmN 1~) ( . In many studies, the universality of the exponent  was noted. For example, the independence of  on the imported energy or the impact velocity was found in Refs. [9, 13, 16, 17, 25]. At the same time, experiments and numerical simulation have shown the dependence of  on the effective dimension of the fragmented object [23]. Also, the dependence of the exponent  on the failure criterion [9] or on the constitutive equation of the material [17] was shown. 6.35 mm 1.4-0.8mm;  =  = 0.25, 0.2; 1.6-2.0mm  =  = 0.8, -0.9 0.6x0.6 0.8x0.6 1.0x0.6 1.2x0.6 1.4x0.6 1.6x0.6 1.8x0.6 2.0x0.6 2.2x0.6 Slope -0.67 Slope -1.06 4 3 2 1 0 )  K > c V , ( m N < ( 0 1 g o l )  K > c V , ( m N < ( g o l 0 1 -1 -5 -4 -2 -1 -3 log10((m/mtot)/K) 0 1 9.5 mm aper 1.8,2.0,2.2mm  =  = -0.0, 0.0;aper 1.6,1.4,1.2,1.0,0.8mm s3;  =  = -0.8, 0.85 5 4 3 2 1 0 -1 -2 -5 0.8x0.6 1.0x0.6 1.2x0.6 1.4x0.6 1.6x0.6 1.8x0.6 2.0x0.6 2.2x0.6 Slope -1.06 Slope -0.94 -4 -2 -1 -3 log10((m/mtot)/K) 0 1 Fig. 14. Average cumulative fragment mass distributions at critical impact velocities for the projectile al x wd shown in the figure in mm after diameter Dprj = 6.35 mm and the meshes with parameters rescaling the two axes with help of the parameter K (2). The figure shows the best coincidence of the curves, which is observed with scaling exponents  =0.25 and  =0.16 ("small" apertures) and  = 0.8,  = 0.9 ("large" apertures). Fig. 15. The same as in Fig. 14, but for the projectile diameter Dprj = 9.5 mm. The figure shows the best coincidence of the curves, which is observed with scaling exponents  = - 0.8 and  = - 0.85 ("small" apertures) and  = 0.0,  = 0.0 ("large" apertures). Fig. 14 shows the average cumulative fragment mass distributions at the critical impact velocities for the projectile diameter Dprj = 6.35 mm and the meshes with apertures al from 0.6 to 2.0 mm. It can be seen that after rescaling the two axes with help of the parameter K (2) the data in Fig. 14 are assembled into two groups corresponding to the "small" ( al = 0.6, 0.8, 1.0, 1.2, 1.4 mm) and "large" ( al = 1.6, 1.8, 2.0, 2.2 mm) apertures. The figure shows the best coincidence of the curves, which is observed with scaling exponents  =0.25 and  =0.16 (group of "small" apertures) and  = 0.8,  = 0.9 (group of "large" apertures). Thus, the average cumulative fragment mass distributions at the critical points must obey the scaling rule of  lmN (, ( c  d w /() D prj )) 0  i l [(( a  d w /() D prj ]) 0 i a  i  ( mm tot / l )[( a  d w /() D prj ]) 0 i , (17) where (Dprj)0 = 6.35 mm, i (i = 1, 2) denotes the scaling function for two group of the distributions. In Eq. (17) we took into account that at the scale transformation in Fig. 14 only the mesh period incoming in the parameter K (2) changes. VmN , c mN and    ) ( ( c ) It can also be seen (Fig. 14 and 15) that each group of distributions in the intermediate mass region has a power-law distribution with an exponent  different from that in the other group:  = 2.060.02 (group of "large apertures") and  = 1.670.02 (group of "small apertures"). Recall that the separation of mesh shields into groups of "small" and "large" apertures is associated with various modes of the fragmentation (see Section 3.1), and the critical value of the mesh aperture separating the modes of fragmentation from each other is given by formula (5): for the 6.35 mm diameter projectile ( al )с  1.4. Therefore, we can state the dependence of the exponent  on the fragmentation mode. Fig. 15 shows the same as in Fig. 14, but for the projectile diameter Dprj = 9.5 mm. It is also seen that the distributions are assembled into two groups corresponding to "small" ( al = 0.8, 1.0, 1.2, 1.4, 1.6 mm) and "large" ( al = 1.8, 2.0, 2.2 mm) apertures (for a 9.5 mm diameter projectile ( al )с  1.6). The difference in the exponents of power-law distributions is less appreciable here:  = 2.060.02 (group of "small apertures") and  = 1.940.02 (group of "large apertures"). For this case, the scaling in the form (17) also takes place. We note that in Fig. 15 the distributions in the group of "large apertures" initially show good coincidence and do not require scale transformations. 50 microsec, 2.48 km/s, 1.6x06mm avr CMD s3 V(km/s) = 2.48 2.6 2.7 2.8 3.0 3.1 2.42 ) ) V , m N ( ( 0 1 Slope -1.06 g o l 60 mks, 2.5km/s, 2.0x0.6x7.92 mm avr CMD s3 V(km/s)= 2.47 2.5 2.6 2.7 2.8 2.9 3.0 Slope -0.81 4 3 2 1 0 4 3 2 1 0 > ) , V m N < ( 0 1 g o l -1 -5 -4 -3 -2 log10(m/mtot) (a) -1 0 -1 -5 -4 -3 -2 log10(m/Mtot) (b) -1 0 Fig. 16. Average cumulative fragment mass distributions at the impact velocities V  Vc: a) Dprj = 6.35 mm, mesh al x wd = 1.6 mm x 0.6 mm, Vc = 2.42 km/s; b) Dprj = 7.92 mm, mesh al x wd = 2.0 mm x 0.6 mm, Vc = 2.47 km/s. Fig. 16 presents the simulation results of the average cumulative fragment mass distributions at the impact velocities exceeding the critical velocity, V  Vc, for the projectile diameters Dprj = 6.35 and 7.92 mm, and the meshes al x wd = 1.6 mm x 0.6 mm and 2.0 mm x 0.6 mm, respectively. It can be seen that the exponent of the power-law distribution in the intermediate mass range does not depend on the impact velocity in a wide range of the velocity variations and remains approximately equal to the value of  at the critical impact velocity. For the projectile diameter Dprj = 6.35 mm,  = 2.060.02, and for the projectile diameter Dprj = 7.92 mm,  = 1.810.02. 4. Summary and conclusions In the present work we have considered the problem of the fragmentation of aluminum projectile on a thin steel mesh shield at high-velocity impact in a three-dimensional (3D) setting. Quantitative characteristics of the projectile fragmentation were obtained by studying statistics of the cloud of fragments. The considerable attention was given to scaling laws accompanying the fragmentation of the projectile. In well-known numerical simulations of fragmentation in mechanical systems, the object under consideration was described as a set of either identical particles coupled by a pairwise potential (by analogy with molecular dynamics) or pieces of various shapes linked by weightless coupling elements of various types. The dynamics of fragments (elements), including both translational and rotational motions, was described by a system of Newton's equations. Simulations were most frequently performed by the method of molecular dynamics or discrete element models [12, 13, 16-18]. A distinctive feature of the present work is that here, following our works [8, 9], the fragmentation has been numerically simulated using the complete system of equations of deformed solid mechanics by the method of smoothed particle hydrodynamics in a 3D setting. The behavior of materials was described using the Mie–Gruneisen equation [31] of state and the Johnson–Cook plasticity model [32]. Simulations were performed for a spherical aluminum-alloy projectiles with the diameters of 6.35, 7.92 and 9.5 mm and a steel meshes with wire diameter dw = 0.6 and cell apertures la from 0.6 mm to 2.2 mm. In all simulations the projectile motion line was perpendicular to the shield plane and was aimed at the node (intersection of wires) located in the center of the mesh shield. The number of SPH particles used by us in calculations for different projectile–shield pairs are presented in Table 1. The main feature of the projectile fragmentation on the mesh shield is the formation of jets of fragments ejected from the front part of the projectile along and across its movement direction. Experiments and simulations [11] showed that the fragmentation of the projectile on the mesh shields is characterized by both forming frontal jets and shock-wave fragmentation of the l a d / projectile rear part. The latter is inherent to fragmentation on a continuous shield. Which mode of the fragmentation dominates depends on the geometrical parameters K= Dprj /( al + wd ) and , where Dprj is the projectile diameter, la is the mesh aperture, dw is the wire  diameter. The frontal fragmentation dominates at larger cell apertures, but when the aperture lessens the part of projectile mass fragmented due to the jets diminishes significantly and the shock-wave fragmentation of the projectile prevails. w In the present work, the results of simulations are presented for a fixed wire diameter dw = 0.6 mm. Therefore, we consider the solution depending on one dimensionless geometric parameter K defining the number of the mesh periods falling within the projectile diameter. Experiments on the interaction of the projectile with a continuous plate [5,6] with analogous h/Dprj ratios (h is the thickness of the plate) and close impact velocities showed that the morphology and internal structure of the clouds of fragments remain similar. This property is used in testing the shield protections intended for installation on the spacecraft (see, for example, [34]). For mesh shields, such a generally recognized similarity parameter, analogous to h/Dprj for continuous shields, has not yet been revealed. In fact, the work presented, following our experiments [11], tests the parameter (2) for this role. The main conclusions of this work can be formulated as follows. - The results of modeling show that the process of projectile facture depending on the impact velocity can be separated into two stages: damage and fragmentation, with a sharp transition from one to another at a critical impact velocity Vc. This conclusion is consistent with the results of modeling performed by methods of molecular dynamics and discrete element models [10, 12, 13, 16-18], and by means of the numerical simulation by SPH method [8, 9]. ( ) max avrM - The largest value of the average fragment mass observed at the critical impact velocity Vc depends nonmonotonically on the parameter K, having a local minimum at some value of Kc or aperture ( al )с (Fig. 4). It is reasonable to assume that this is due to the presence of two modes of the projectile fragmentation on the mesh shield [11]. For K <Kc ( al >( al )с - the "large" mesh apertures), the frontal mechanism of the projectile fragmentation inherent to the mesh shield dominates. For K > Kc ( al < ( al )с - "small" mesh apertures), shock-wave fragmentation of the back part of the projectile inherent to on the continuous shield dominates. - It is shown that the dependences of the normalized average mass of the fragments on the impact velocity V exhibit the property of scale invariance, when the parameter K varies, in the entire considered range of the mesh apertures. As a result, we obtained the dependences of the critical velocity Vc on the projectile diameter and the mesh parameters for both "small" (9) and "large" apertures (11). The dependence of the critical velocity Vc of avr m tot M / fragmentation on the parameter K consists of two branches (Fig. 7), experiencing a sharp bend at the point corresponding to the critical aperture of the mesh, again confirming the existence of two modes of the projectile fragmentation on the mesh shield, which are mentioned above. m / avr m tot - Dependences of the normalized weighted average mass of fragments on the impact velocity exhibit the property of scale invariance when the parameter K varies in the region of "large" apertures only for a fixed diameter of the projectile and in the region of "small" avrm on apertures only for a fixed mesh aperture. As a result, in the first case, the dependence of the impact velocity and mesh parameters (14) was extracted, in the second case - the dependence of avrm on the impact velocity and the projectile diameter (15). - It is shown that the average cumulative mass distributions, constructed at critical impact , exhibit the property of scale invariance, splitting into two groups of velocities,  cVmN ( , )  distributions exactly corresponding to the "small" and "large" apertures of the mesh shield (Fig. 14 and 15). In each group, the average cumulative distributions show good coincidence in the entire mass region. It can also be seen (Fig. 14 and 15) that each group of distributions in the intermediate mass region has a power-law distribution with an exponent  different from that in the other group. As noted above, the separation of the meshes into groups of "small" and "large" apertures is associated with various modes of fragmentation that are observed when the projectile is disintegrated. Therefore, we can state the dependence of the exponent  on the fragmentation mode. Acknowledgments This research was supported by the Russian Foundation for Basic Research (grant 15-01-00565- a). References. 1. W.K. Hartmann. Terrestrial, lunar, and interplanetary rock fragmentation. Icarus. 1969. Vol.10. P.201-213. 2. D.E. Grady and M.E. Kipp, Fragmentation properties of metals. Int. J. Impact Engng. 1997. Vol. 20. P. 293-308, 3. X. Campi, Multifragmentation: nuclei break up like percolation clusters. J. Phys. A. 1986. Vol.19, L917-L921, 4. J. Richert, P. Wagner. Microscopic Model Approaches to Fragmentation of Nuclei and Phase Transitions in Nuclear Matter. Physics Reports – 2001. -Vol. 350. - P.1-9 5. A. J. Piekutowski. Fragmentation of a sphere initiated by hypervelocity impact with a thin sheet. Int. J. Impact Engng. -1995. Vol. 17. P. 627-638, 6. A.J. Piekutowski. Effect of scale on debris cloud properties. Int. J. Impact Engng. v. 20, pp. 639-650, 1997. 7. J.A. Åström, B.L. Holian, J. Timonen, Universality in fragmentation, Phys. Rev. Lett. 84 (2000) 3061–3064. 8. N.N. Myagkov, Scaling Invariance of Spherical Projectile Fragmentation upon High-Velocity Impact on a Thin Continuous Shield. Journal of Experimental and Theoretical Physics, 2017, Vol. 124, No. 1, pp. 57–69. 9. N.N. Myagkov, V.V. Stepanov. On projectile fragmentation at high-velocity perforation of a thin bumper. Physica A: Statistical Mechanics and its Applications. 2014. Vol. 410, P. 120- 130. 10. N.N. Myagkov and T.A. Shumikhin, Critical behavior and energy dependence of mass distributions in impact fragmentation. Physica A: Statistical Mechanics and its Applications 2005. Vol.358. P.423-436. 11. N.N. Myagkov, T.A. 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Scaling laws for impact fragmentation of spherical solids, Phys. Rev. E – 2012, Vol. 86,- P. 016113. 17. G. Timar, J. Blömer, F. Kun, and H. J. Herrmann. New Universality Class for the Fragmentation of Plastic Materials, Phys. Rev. Lett.  2010.  Vol.104. P.09550 18. G. Pal, I. Varga, and F. Kun. Emergence of energy dependence in the fragmentation of heterogeneous materials. Phys. Rev. E – 2014, Vol. 90,- P. 062811. 19. X. Campi, Signals of a phase transition in nuclear multifragmentation. Phys. Lett. B, v.208, 351, 1988. 20. X. Campi, H. Krivine, N. Sator, E. Plagnol, Analyzing fragmentation of simple fluids with percolation theory, Eur. Phys. J. D, v.11, 233–238, 2000. 21. Grady, D.E., Winfree, N.A. Impact fragmentation of high-velocity compact projectiles on thin plates: a physical and statistical characterization of fragment debris. Int. J. Impact Engng., 2001, v. 26, pp. 249-262. 22. T. A. Shumikhin, N. N. Myagkov, L. N. Bezrukov, Properties of ejecta generated at high- velocity perforation of thin bumpers made from different constructional materials. Int. J. Impact Engn., 2012, V. 50, pp. 90-98. 23. A. Meibom and I. Balslev. Composite power laws in shock fragmentation, Phys. Rev. Lett. v.76, 2492, 1996. 24. N. Sator, S. Mechkov and F. Sausset, Generic behaviours in impact fragmentation, Europ. Phys. Lett. 81, 44002, 2008. 25. L. Oddeshede, P. Dimon and J. Bohr, Self-organized criticality in fragmenting.// Phys. Rev. Lett. 1993. Vol. 71. P.3107, 26. D. Stauffer, A. Aharony. Introduction to Percolation Theory, London 1994. 27. J. Monaghan, Smoothed particle hydrodynamics, Rep. Prog. Phys.v.68, 1703–1759, 2005. 28. D. Libersky, A.G. Petscheck, et al. High strain Lagrangian hydrodynamics, J. Comput. Phys., v.109, 67-75, 1993. 29. F. Stellingwerf, Wingate C.A. Impact modeling with smooth particle hydrodynamics, Int. J. Impact Engng., v. 14, 707-718, 1993. 30. O. Hallquist. LS-DYNA Theory Manual. Livermore Software Technology Corporation, 2005. 31. Zel'dovich Y. B., Raizer, Y. P.: Physics of Shock Waves and High-Temperature Hydrodynamic Phenomena. New York : Academic, 1966. 32. G.R. Johnson, W.H. Cook. A constitutive model and data for metals subjected to large strains, high strain rates and high temperatures./ Proc. 7th Intern. Symp. Ballistics. 1983.  P. 541-547. 33. G. I. Kanel, S.V. Razorenov, V.E. Fortov. Shock-Wave Phenomena and the Properties of Condensed Matter. New York: Springer, 2004. 34. E. L. Christiansen, J. L. Crews, J. E. Williamsen, J. H. Robinson, A.M. Nolen. Enhanced meteoroid and orbital debris shielding // Int. J. Impact Engng. - 1995. - V. 17. - P. 217-228.
1911.09462	1	1911	2019-11-21T13:39:19	ADMET polymerization of $\alpha$,$\omega$-unsaturated glycolipids: synthesis and physico-chemical properties of the resulting polymers	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	Trehalose diesters exhibiting $\alpha$,$\omega$-unsaturation are glycolipids which can be easily polymerized by ADMET (acyclic diene metathesis) polymerization. In this paper, enzymatic esterification was performed to selectively esterify primary hydroxyl groups of trehalose (6 and 6'-positions) with vinyl undecenoate. The vinyl ester was beforehand obtained by palladium-catalyzed transesterification of undecenoic acid with vinyl acetate. The resulting trehalose diundecenoate was homopolymerized and copolymerized with undecenyl undecenoate in order to obtain random copolymers with different compositions. The synthesis of such copolymers was confirmed by 1 H NMR spectroscopy and size exclusion chromatography (SEC). Their solid-state phase separation were investigated by DSC and X-ray scattering as function of temperature and their solution self-assembly was investigated by dynamic light scattering (DLS) in water.	physics.app-ph	physics	ADMET polymerization of α,ω-unsaturated glycolipids: synthesis and physico-chemical properties of the resulting polymers† G. Hibert,a,b E. Grau,a,b D. Pintori,c S. Lecommandouxa,b and H. Cramaila,b Trehalose diesters exhibiting α,ω-unsaturation are glycolipids which can be easily polymerized by ADMET (acyclic diene metathesis) polymerization. In this paper, enzymatic esterification was performed to selectively esterify primary hydroxyl groups of trehalose (6 and 6'-positions) with vinyl undecenoate. The vinyl ester was beforehand obtained by palladium- catalyzed transesterification of undecenoic acid with vinyl acetate. The resulting trehalose diundecenoate was homopolymerized and copolymerized with undecenyl undecenoate in order to obtain random copolymers with different compositions. The synthesis of such copolymers was confirmed by 1H NMR spectroscopy and size exclusion chromatography (SEC). Their solid-state phase separation were investigated by DSC and X-ray scattering as function of temperature and their solution self-assembly was investigated by dynamic light scattering (DLS) in water. Introduction for to be good candidates Glycopolymers have been the subject of a large number of studies over the last decades.1 -- 5 Most of them are obtained from the polymerization of petroleum-based monomers bounded to a sugar moiety, probably excepted recent examples of glycoplypeptides.6,7 However, other sugar- containing molecules, such as glycolipids, are fully bio-based and could be used for the synthesis of glycopolymers. Glycolipids are amphiphilic molecules containing a sugar part, which is hydrophilic, linked to a fatty acid moiety, which is hydrophobic.4,8 -- 11 Among these glycolipids, sugar esters are a large family showing a huge diversity, due to the possible combination of different sugar moieties (mono-, di-, oligo- and polysaccharides) with a wide variety of fatty acid derivatives.12 In addition, these molecules are biodegradable and exhibit surfactant and bio-active properties.13 -- 19 Even if glycolipids appear the synthesis of glycopolymers, only few studies describe the polymerization of sugar esters. Our group has recently reported the synthesis of thermoplastic polymers from methyl α-D-glucoside monoester and sucrose monoester.20 These sugar esters with hydroxyl groups on the fatty acid chains were polymerized with fatty acid-based 9-hydroxy-10- ethoxyoctadecanoate) and isophorone diisocyanate. Both cross-linked polyurethanes were obtained linear and depending on the solvent of polymerization. Park et al. described the synthesis of polyesters from trehalose and sucrose diesters. The sugar ester was prepared by esterification of these carbohydrates with divinyl adipate in acetone in the presence of Novozyme 435 as catalyst. 21 The lipase enabled the selective esterification of the primary hydroxyls of the saccharide. Using an excess of divinyl adipate, the diester could be selectively obtained. Polycondensation reaction was then performed in acetone with different diols to get various degradable glycopolyesters with trehalose and sucrose moieties within the polymer chains. Gross and coll. have also described the synthesis of novel lactonic sophorolipid.22,23 Lactonic glycopolyesters sophorolipid was synthesized from the fermentation of (4-hydroxybutyl from diols Candida bombicola and polymerized by ring-opening metathesis polymerization (ROMP) using Grubbs catalysts. In another study, the same group reported the ROMP of chemo- enzymatically modified lactonic sophorolipids. Copolymers of these acetylated and modified sophorolipids were obtained using a similar synthetic methodology. Polymers were then post-modified using so-called "click chemistry" reactions on acrylated groups. Functionalization of methacrylate was performed via a thiol -- ene reaction with mercaptoethanol and functionalization of the azide was performed via azide -- alkyne Huisgen cyclo-addition reaction. The synthesized polymers from sophorolipids were shown to be compatible with human mesenchymal stem cells. Moreover, their biodegradation has been evidenced and can be controlled depending on the functions linked to the sophorose moiety. This study revealed that polymers from sophorolipids could be used as bioresorbable polymers in biomedical applications.24 Among the natural glycolipids available, trehalose lipids are a family of glycolipids with trehalose as saccharide moiety. These molecules are 6,6'-trehalose diesters and they are basic components or Corynebacteria and Caenorhabditis elegans dauer larvae).25 -- 27 These glycolipids show anti-tumour and antibacterial activities which have been the subject of many studies to understand their biological potential. Several routes have been developed for the synthesis of trehalose esters. To target precise morphologies (trehalose esterified only on the primary hydroxyl groups in 6 and 6' position), routes using protection and deprotection steps of the secondary alcohol of the trehalose were developed. These procedures allow a selective esterification of the primary alcohols but need several reaction steps to get the sugar diesters.25,28 -- 30 To reduce the number of reaction the esterification reaction, protecting group-free strategies were also developed. Some authors used peptide-coupling agent like TBTU or the couple triphenyl phosphine (PPH3)/ diethyl azodicarboxylate (DIEAD).31,32 According to the stoichiometry between trehalose and fatty acids, diesters or monoesters of trehalose can be obtained. These routes are however showing some drawbacks, a main one being the solvents used (DMF, steps while keeping of microorganism selectivity of (Mycobacteria the pyridine) which are toxic and even classified as CMR substances. Finally, many studies have reported the enzymatic esterification of trehalose. Generally, lipase B from Candida antarctica is usually employed. The use of enzymes allows a one step and selective esterification on primary alcohol in mild conditions with low toxic reagent and solvents.33 -- 35 In this contribution, the preparation of α,ω-unsaturated trehalose diester from an enzymatic esterification of the trehalose with vinyl undecenoate is reported. The vinyl undecenoate was beforehand synthesized by transvinylation of undecenoic acid with vinyl acetate. Then, this new trehalose diester was homopolymerized and copolymerized with undecenyl undecenoate by acyclic diene metathesis (ADMET) to produce polymers with original features. Finally, the thermal and self-assembly properties of the so-formed amphiphilic investigated respectively in bulk and solution. To our knowledge this is the first time that ADMET was used to polymerize glycolipids. copolymers were random Experimental Materials Potassium hydroxide (KOH, pellet), 2-methyltetrahydrofuran (99%), vinyl acetate (99%), Hoveyda-Grubbs 2nd generation metathesis catalyst, 1,5,7-triazabicyclodec-5-ene (TBD, 98%), 2-methyl-tetrahydrofuran (mTHF, 99%), Lipase B from Candida antarctica (CALB) were purchased from Sigma-Aldrich. 10- undecen-1-ol (99%), 10-undecenoic acid were supplied from Alfa Aeser. Methyl 10-undecenoate (99%), palladium acetate (98%), were purchased from TCI. Anhydrous trehalose (99%) was purchased from Fisher. Instrumentation Flash chromatography was performed on a Grace Reveleris apparatus, employing cartridges from Grace equipped with ELSD and UV detectors at 254 and 280 nm. Elution solvents are dependent on the sample and are mentioned in the experimental parts. All NMR spectra were recorded at 298 K on a Bruker Avance 400 spectrometer operating at 400MHz. Size exclusion chromatography (SEC) measurements were conducted on a PL GPC50 integrated system with RI detectors with a series of three columns from Polymer Laboratories. DMF with LiBr (1 g.L-1) was used as eluent at 25°C at an elution rate of 1mL/min. Polystyrene was used as the standard. Differential Scanning Calorimetry (DSC) measurements were performed on DSC Q100 (TA Instruments). The sample was heated from −150°C to 170°C at a rate of 10°C.min−1. Consecutive cooling and second heating runs were also performed at 10°C.min−1. Thermogravimetric analyses (TGA) were performed on TA Instruments Q50 from room temperature to 600°C at a heating rate of 10°C.min-1. The analyses were investigated under nitrogen atmosphere with platinum pans. ESI-MS was performed on a QStar Elite mass spectrometer (Applied Biosystems) and MALDI-TOF spectra were performed on a Voyager mass spectrometer (Applied Biosystems) both by the Centre d'Etude Stucturale et d'Analyse des Molécules Organiques (CESAMO). The ESI-MS instrument is equipped with an ESI source and spectra were recorded in the negative/positive mode. The electrospray needle was maintained at 4500 V and operated at room temperature. Samples were introduced by injection through a 20 μL sample loop into a 400 μL/min flow of methanol from the LC pump. Samples were dissolved in THF at 1 mg/ml, and then 10 μl of this solution was diluted in 1 ml of methanol. The MALDI-TOF instrument is equipped with a pulsed N2 laser (337 nm) and a time-delayed extracted ion source. Spectra were recorded in the positive-ion mode using the reflectron and with an accelerating voltage of 20 kV. Samples were dissolved in DMF at 10 mg/mL. DHB (2,5-dihydroxybenzoic acid) was employed as the matrix for ionization. Transmission Electron Microscopy images were recorded at the Bordeaux Imaging Center (BIC) on a Hitachi H7650 microscope working at 80 kV in high resolution mode. Samples were prepared by spraying a 0.5 mg/mL aqueous solution of polymer nanoparticles onto a copper grid (200 mesh coated with carbon) using a homemade spray tool. No stained were applied in this case. Dynamic light scattering measurements were performed at 25°C with a Malvern Instrument Nano-ZS equipped with a He-Ne laser (l ¼ 632.8 nm). Samples were introduced into cells (pathway: 10 mm) after filtration through 0.45 μm cellulose micro-filters. The measurements were performed at a scattering angle of 90°. Synthesis of monomers Vinyl undecenoate (1) (transvinylation of undecenoic acid): Undecenoic acid (1 eq.) and a 15 eq. excess of vinyl acetate (VAc) was poured in a CEM Discover SP microwave reactor vial. Then, the palladium acetate (0.05 eq.), and the potassium hydroxide (0.10 eq.) were added and the resulting reaction mixture was stirred under microwave at 60 °C for 2 h. The reaction mixture was diluted in DCM and then filtrated over celite to remove the palladium acetate, before removing the solvent with a rotary evaporator. The resulting residue was purified by silica gel flash chromatography using an elution gradient of 2-5% MeOH in DCM to give the vinyl undecenoate. Yield: 95 %. 1H NMR (DMSO-d6, 400MHz, δ (ppm)): 7.29 (m, 1H, =CH-OCO-), 5.81 (m, 1H, -CH=CH2), 4.97 (m, 2H, CH2=CH-), 4.88 (d, 1H, CH2=CH-OCO-), 4.56 (d, 1H, CH2=CH-OCO-), 2.37 (t, 4H, -CH2-COO-), 2.04 (m, 4H, -CH2-CH=CH-), 1.67 (m, 4H, -CH2- CH2-COO-), 1.30 (m, 20H, aliphatic -CH2-). Trehalose diundecenoate (2) (enzymatic esterification of trehalose): The lipase (2.8 g) was added to a mixture of trehalose (3 g, 9 mmol), vinyl ester (6.8 g, 22 mmol, 2.5 eq) in dry mTHF (40 mL). The reaction mixture was stirred at 45 °C for 72 hr. After the reaction time, mTHF was added to well dissolve the diesters of trehalose, then the reaction mixture was filtered and solvent was removed in rotary evaporator. The obtained crude product was purified by silica gel flash chromatography using an elution gradient of 5-25% methanol in EtOAc-DCM (1:1) to give pure trehalose diesters as white solids. Yield: 50 %. 1H NMR (DMSO-d6, 400MHz, δ (ppm)): 5.78 (m, 2H, -CH=CH2), 5.04 (d, 2H, -OH, H4), 4.94 (m, 4H, CH2=CH-), 4.89 (d, 2H, -OH, H3), 4.82 (d, 2H, -CH-, H1), 4.76 (d, 2H, -OH, H2), 4.21 (d, 2H, -CH-, H6), 4.04 (m, 2H, -CH-, H6), 3.89 (m, 2H, -CH-, H5), 3.55 (m, 2H, -CH-, H3), 3.26 (m, 2H, -CH-, H2), 3.13 (m, 2H, -CH-, H4), 2.27 (t, 4H, -CH2-COO-), 2.01 (m, 4H, -CH2- CH=CH-), 1.51 (m, 4H, -CH2-CH2-COO-), 1.33-1.25 (m, 20H, aliphatic -CH2-). (Fig S1-S2) Undecenyl undecenoate (3) (transesterification): Undecenol (12.8 g, 0.08 mol.) was blended with 10-methylundecenoate (15 g, 0.08 mol.). TBD (5% mol.) was added as a catalyst. The reaction was performed under a nitrogen flow at 120°C for 2h, then the temperature was increased to 160 °C for 2h more under dynamic vacuum. Purification over silica gel flash chromatography was performed using cyclohexane/ethyl acetate 94/6 eluent. Yield: 76%. 1H NMR (400MHz, CDCl3, δ (ppm)): 5.8 (m, 1H, -CH=CH2), 4.9 (m, 2H, CH2=CH-), 4.0 (t, 2H, - CH2COO-), 2.2 (t, 2H, -COOCH2-), 2.0 (m, 4H, -CH2-CH=CH-), 1.5- 1.2 (m, 26H, aliphatic -CH2-) (Fig S3). Synthesis of polymers by ADMET polymerization Homopolymers (P0 and P100): Into a flame-dried Schlenk flask equipped with bubbler, undecenyl undecenoate (P0) (0.1 g, 0.3 mmol.) or trehalose diundecenoate (P100) (0.2 g, 0.3 mmol.) dried over-night under vacuum was dissolved in 2 mL of dry THF. Hoveyda-Grubbs 2nd generation metathesis catalyst (4 mol.%) was added and the reaction mixture was stirred under nitrogen atmosphere for 24 h at 45 °C. Then, 3 ml of ethyl vinyl ether were introduced into the flask to quench the reaction. The final glycopolyester (P100) or fatty acid-based polyester (P0) was purified by precipitation in cold methanol. Copolymers (P33, P50 and P67): Into a flame-dried round Schlenk flask, trehalose diundecenoate (0.2 g, 0.3 mmol.) and the corresponding amount of undecenyl undecenoate (see Table 1) were mixed and dried over-night under vacuum. Then, the diene monomers were dissolved in 2 mL of dry THF and Hoveyda-Grubbs 2nd generation (4 mol.%) was added. The reaction mixture was stirred at 45 °C under nitrogen atmosphere for 24 h. Then, 3 mL of ethyl vinyl ether and 4 mL of THF were introduced to the flask. The final copolymers were purified by precipitation in cold methanol. Polymer self-assemblies in water The high selectivity of enzymes and their high activity in mild conditions have raised interest from lot of research groups. In this context, the enzymatic esterification of sugar esters and particularly trehalose esters have been already reported.34,36 -- 39 Fatty acids or fatty acid methyl (or vinyl) esters can be employed for this esterification.34 Vinyl esters are especially interested as, acetaldehyde, -a gas at room temperature- that is produced during their transesterification can be readily removed from the reaction medium, thus allowing the displacement of the reaction towards the ester formation. Herein, the enzymatic transesterification of trehalose with vinyl ester has been developed to design new trehalose diesters. Different catalysts are used in the literature to synthesize vinyl esters from vinyl acetate and fatty acids. The synthesis of vinyl undecenoate (1)) was carried out by a transvinylation reaction between undecenoic acid and vinyl acetate under Pd(II) catalysis with KOH at 60°C under microwave. (Scheme 1, Scheme 1 Synthesis of vinyl undecenoate (1) and trehalose diundecenoate (2). The 1H NMR spectrum confirms the formation of the vinyl undecenoate (Fig 1) with the appearance of the peaks corresponding to the protons of the vinyl ester function at 4.56, 4.88 and 7.29 ppm, respectively. then introduced Nanoparticles were prepared using solvent displacement method by dialysis. (Co)polymers were solubilized in DMF and polymer solutions were into dialysis membranes with molecular weight cutoff of 1 kD. The membranes were beforehand soaked for 15 min and rinsed with deionized water. The membranes were then submerged in 2 L of deionized water and dialyzed under gentle magnetic stirring for 12 h. After 2 h and 4 h, the dialysis solution was replaced by fresh deionized water. At the end of the dialysis, milky solutions present inside the dialysis membranes were recovered. Results and discussion Synthesis of trehalose diester Fig. 1 1H NMR spectra of undecenoic acid (top) and vinyl undecenoate (bottom). abcdefabcdbcaffedCH2CDCl3CDCl3bcadCH2 The transesterification reaction of the trehalose was then performed using Candida antarctica Lipase B immobilized on acrylic resin (CALB) also referred as Novozyme 435. This enzyme is the most used in the literature due to its stability in organic solvents and its high efficiency.12,40 The reaction was conducted in dry methyl-tetrahydrofurane at 45°C. The formation and purity of trehalose diester was proved by means of NMR techniques (see Fig.2 and Fig. S1) as well as ESI- MS analysis (see Fig S2). The 1H NMR analysis in DMSO-d6 (Fig 2) confirmed that the ester functions were only localized on the primary position. Indeed, peaks corresponding to protons located nearby the primary alcohols were shifted from 3.48 and 3.53 ppm to 4.24 and 4.03 for protons in 6-position and from 3.64 to 3.88 ppm for protons in 5-position, respectively. No shifts of the protons nearby the secondary alcohols were observed. Fig. 2 1H NMR spectra of trehalose (top) and trehalose diundecenoate before purification (bottom). Synthesis of polymers by ADMET polymerization It ADMET polymerization is performed on α,ω-diene monomers to produce unsaturated polymers. is a step-growth polymerization driven by the release of ethylene. When the melting points of the monomers are not too high (<100°C), the polymerization can be conducted in bulk and under vacuum to remove the ethylene from the reaction medium. Thus, the equilibrium of the reaction is driven towards the polymer formation. In our case, the melting point of the trehalose diundecenoate is around 145°C, value incompatible with the catalyst stability to perform the polymerization in bulk. ADMET homopolymerization of trehalose diundecenoate and its copolymerization with undecenyl undecenoate (see 1NMR spectrum, Fig S3), were thus conducted in THF for 24 hours at 45°C (Scheme 2). Scheme 2 Synthesis of polymers by ADMET (co)polymerization of trehalose diundecenoate. Except all for HG1, First, the reactivity of trehalose diundecenoate toward ruthenium-based metathesis catalysts was investigated. Indeed, the efficiency of the catalyst depends on several factors, like the solubility of the monomer or the tolerance of the catalyst toward chemical functions present on the monomers. In order to select the best catalyst, trehalose diundecenoate was homopolymerized in THF with 4 mol.% of Grubbs 1st (G1), Grubbs 2nd (G2), Hoveyda-Grubbs 1st (HG1) and Hoveyda-Grubbs 2nd (HG2) generation metathesis catalysts, respectively (see Fig. S4). The completion of the reaction was determined by 1H NMR; for each polymer the disappearance of the terminal double bond peaks at 5.00 and 5.8 ppm and the appearance of the internal double bond peak at 5.35 ppm confirmed the polymer formation (see Fig. S5). After precipitation in cold methanol, the poly(trehalose undeceneoate)s were analyzed by SEC, in DMF; data are given in Table S6 and Fig. S6. It is worth noting that molar masses and dispersity provided by SEC should not be taken as absolute values as the SEC calibration was carried out using polystyrene standards catalysts produced poly(trehalose undeceneoate)s with reasonable molar masses and expected dispersities around 2. However, the higher reactivity of HG2 and its tolerance to moisture led us to retain this catalyst for the copolymerization series. In this last case, undecenyl undecenoate was added in different proportions from 33 mol.% to 67 mol.% to prepare random copolymers. The completion of the polymerization reactions and the composition of each copolymer were evaluated by 1H NMR. The completion of the reaction was confirmed with the disappearance of the terminal double bond signal (5.00 and 5.8 ppm) and the appearance of the internal double bond signal (5.35 ppm). The copolymer composition was evaluated using the 4.2 ppm chemical shift of protons in 6-position on the trehalose (Fig. S7). The experimental polymer composition was in good agreement with the theoretical one (Fig. S7 and Table 1). MALDI-TOF also supported the formation of the copolymers (Fig. S8 to S11). The molar masses of the (co)polymers obtained by ADMET polymerization were determined by SEC in DMF. The polymers were found insoluble in THF at room temperature when the proportion of glycolipid in the polymer was higher than 33 mol.%; however the latter were all soluble in DMF. Data are summarized in Table 1. The SEC traces, in DMF, of the copolymers obtained by ADMET polymerization are shown in Fig. 3. 123456123456123456123456aabcbcbca25663DMSOCH214dffdDMSO2563-64WaterOH6OH2OH3OH41CH2of undecenoic acidb Fig. 3 SEC traces of the copolymers synthesized by ADMET from trehalose diundecenoate and undecenyl undecenoate with different proportions of trehalose diundecenoate (33 -- 100%). SEC performed in DMF with LiBr Polystyrene calibration. It can be noticed that the molar masses of the copolymers increase with the glycolipid content. The low molar masses obtained, notably in the case of low content of trehalose diundeconate (P33), is explained by the formation of a fraction of cyclic oligomers during ADMET polymerization, as evidenced by MALDI-TOF analysis (Fig S11). However, in the frame of this study, polymers with high content in glycolipid moiety were mostly targeted. Thermal properties and bulk phase separation morphology of copolymers The thermal stability of the homopolymers and copolymers was evaluated by thermogravimetry (TGA) under nitrogen at a heating rate of 10 °C.min-1. Two thermal decompositions can be observed, the first one corresponding to the saccharide segment around 330°C and the second one corresponding to the lipid part around 420°C (Fig. S12). The thermal behavior of the (co)polymers was determined by DSC. All analyses were carried out under a nitrogen atmosphere with a 10 °C.min-1 heating rate. The DSC traces are shown in Fig. 4. All the polymers evidenced a semi-crystalline behavior. No glass transition temperature (Tg) could be detected by DSC even after quenching the melted samples in liquid nitrogen. P0 and P100 present a melting temperature (Tm) of 145 °C for undecenyl trehalose diundecenoate, respectively. undecenoate and for 35 °C (P50), two melting incorporated glycolipid Fig. 4 DSC curves of the polymers synthesized by ADMET from trehalose diundecenoate and undecenyl undecenoate with different proportions of trehalose diundecenoate (0 -- 100%). When 33 mol.% of glycolipid is incorporated in the copolymer (P33), temperatures are observed, one corresponding to the "lipidic part" around 25°C and one at 110°C corresponding to the "saccharide part". At a ratio of 50 mol.% of the melting temperature of the "saccharide part" increases to 145°C and the melting temperature of the fatty counterpart stays around 20°C. Above 50 mol.% (P67), only one melting temperature could be detected at 130°C. The observation of the two melting transitions from the copolymer segments is clear evidence that a phase separation occurred in the bulk material. More insight about the resulting structure was obtained by X-ray scattering. Small-angle X-ray scattering experiments were thus performed at different temperatures, below and after the previously observed phase transitions, on the (co)polymers to elucidate their solid-state self-assembled structure. Fig. 5 (a) shows X- ray spectra of the series of (co)polymers measured at 30 °C. It can be noticed the "fatty" homopolymer (P0) only shows scattering peaks in the wide- angle region (q = 15.20 and 16.6 nm-1) corresponding to characteristic distance around 0.40 nm (d=2π/q), which could be attributed to the lateral distance between aliphatic chains, reported data.41 The in agreement with previously diffractogram of the homopolymer synthesized from trehalose undecenoate (P100) shows characteristic peaks in the low- angle is characteristic to a lamellar packing (q = 2.45, 4.9, 7.35, 9.8 and 12.5 nm-1). The first intense low-angle reflection observed at q = 2.45 nm-1 is assigned to a long period of 2.56 nm. This long period could be attributed to the distance between two trehalose units in the polymer backbone, in agreement with earlier work22 schematic representation of the packing model is represented in Fig. 6. region, with a wave-vector periodicity that X-ray spectrum of polysophorolipids. that on A Table 1 Summary of characteristics of the polymers synthesized by ADMET from trehalose diundecenoate and undecenyl undecenoate with different proportions of trehalose diundecenoate (0 -- 100%). -100-50050100150-2024681012Heat flow (W/g)Temperature (°C) P100 P67 P50 P33 P0Exo 16182022242628300,00,20,40,60,81,0Normalized responseRetention time (min) P100 P67 P50 P33 Polymers Trehalose diundecenoate feed (mol.%) Trehalose diundecenoate incorporated (mol.%)a 𝑴n b (g.mol-1) Ðb Tm (°C) ΔH (J/g) Td5% (°C) P100 P67 P50 P33 P0 100 67 50 33 0 156 130 12 - 145 24 - 110 19.57 13.60 9.2 -- 9.9 32.67 -- 5.43 100 61 45 27 0 13200 6000 9600 5500 2500c 2.1 1.7 1.6 1.5d 1.2c 83 a Determined by 1H NMR spectroscopy. b Estimated by SEC in DMF with LiBr, PS calibration. c Determined by SEC in THF, PS calibration. 35 275 280 278 275 380 Fig. 5 X-ray spectra recorded at 30°C (a), 100°C (b) and 160°C (c) of the polymers synthesized by ADMET from trehalose diundecenoate and undecenyl undecenoate with different proportions of trehalose diundecenoate (0 -- 100%). However, no characteristic peak corresponding to short distance that may reflect the lipid phase crystallization is observed on the diffractogram. This feature could be explained by the presence of the trehalose units in the polymer backbone that can create inter-chain spacing, which may prevent the crystallization of the lipid domains. When 33 % of glycolipid is incorporated in the copolymer (P33), only the crystallization of the lipidic phase at short distance is observed. However, a double melting point was observed on the DSC curves. The too small amount of trehalose units incorporated in the polymer backbone cannot induce a lamellar organization allowing its observation by X-ray scattering. With 50 % of glycolipid in the copolymer (P50), the two types of organizations are observed. There are enough saccharide and lipid segments to allow the observation of the two crystallizations. 23456789101112131415161718100100010000 Intensity (a.u.)q (nm-1)7.354.99.812.252.452.454.97.359.812.252.454.97.359.812.2515.2016.615.2016.615.2016.6P100P67P50P33P0(a)23456789101112131415161718100100010000 Intensity (a.u.)(b)q (nm-1)7.354.99.812.252.452.454.97.359.812.252.454.97.359.812.25P0P33P50P67P10023456789101112131415161718100100010000 Intensity (a.u.)(c)q (nm-1)P0P33P50P67P100 When 67 % of glycolipid is incorporated in the copolymer structure (P67), the lamellar organization of trehalose is only observed. The large amount of saccharide present in the backbone probably prevents the crystallization of the lipidic phase, as it is the case for the homopolymer synthesis with 100% of glycolipid (P100). Fig. 5 (b) and Fig. 5 (c) show X-ray spectra of the (co)polymers in bulk respectively at 100 °C and 160 °C. At 100 °C (Fig. 5 (b)), the short distance reflections (d = 0.40 nm) disappeared in the cases of homopolymer P0 and of the copolymers P33 and P50 containing 33 % and 50 % of glycolipid respectively, showing the disappearance of the in agreement with DSC data. At 160 °C (Fig. 5 (c)), above the melting temperatures of both segments, (d=2.56 nm), corresponding to the lamellar packing between saccharide units along the chains, disappears. That corresponds to the second melting observed by DSC. lipidic crystalline domains, the long period reflections Fig. 6 Packing model showing lipid crystallization of the homopolymer P0 synthesized with 0 % of glycolipid (a) and lamellar packing of the homopolymer P100 synthesized with 100 % of glycolipid (b). Self-assembly in water: nanoparticles formation and characterization lipidic part, thus The self-assembly behavior in water of the (co)polymers were studied using a solvent-displacement (or nanoprecipitation) method. To induce self-assembly, solutions of polymers in DMF (a good solvent for both the lipid and saccharide moieties) were dialyzed against water, which is a non-solvent for the inducing spontaneously their assembly. Milky solutions were obtained after dialysis. The concentration of the polymer dispersion in water was adjusted to 0.5 mg.mL-1 by dilution. The resulting assemblies were characterized by transmission electron microscopy (TEM) and dynamic light scattering (DLS). The hydrodynamic diameters and polydispersity indices (PDIs) of the polymer assemblies were determined and are summarized in Table 2. As shown in Fig. 7, TEM images showed micellar self- assemblies. DLS analysis (see Fig S13) showed that all the polymers containing the glycolipid (glycopolyesters) unit in the polymer chains exhibit only one relaxation time in agreement with a monomodal distribution, proving these unsaturated glycopolyesters are able to nicely self-assemble in water by nanoprecipitation. The homopolymer P0, which was synthesized without glycolipid, precipitated after dialysis and, as expected, no colloïdally stable assembly was observed. that Table 2 Hydrodynamic diameters and polydispersity indices (PDIs) measured by DLS of the assemblies formed from the polymers synthesized by ADMET from trehalose diundecenoate and undecenyl undecenoate with different proportions of trehalose diundecenoate (0 -- 100%). Polymers dH (nm) P100 P67 P50 P33 P0 200 160 160 160 - PDI 0.01 0.22 0.07 0.11 - Fig. 7 TEM images of the (co)polymers (a) P100 and (5) P50 after self- assembly. DLS measurements showed that the resulting self-assemblies have hydrodynamic diameters (dH) of 200 nm for the homopolymer obtained from the trehalose diundecenoate (P100) and dH of about 160 nm for all the copolymers (P67, P50 and P33) and with relatively low PDI (below 0.25). The nanoparticles size appears to be mostly independent of the polymer composition and thus dominated by the self-assembly process. In addition, the nanoparticle dispersions appeared to be stable for at least several days. Conclusions A series of random copolymers were synthesized from ADMET polymerization of trehalose diundecenoate and undecenyl undecenoate. These novel glycolipid-polyesters exhibit unique structural organization due to the lipidic and carbohydrate part that induce crystallization and ordered packing within the materials of the saccharide and the lipid moieties. In bulk, the resulting polymers exhibit two distinct melting points around 30°C and 130°C. Moreover, these amphiphilic copolymers could self-assemble in nano-scale particles in water. It was observed that the morphology and the size of the particles were independent on the glyco-to-lipid percentage in the their average copolymers, thus allowing modulating 2.56 nm0.40 nm(a)(b)(a)(b) hydrophobicity (hydrophilicity) without changing their size and colloidal stability. Acknowledgements The authors thank University of Bordeaux, Bordeaux INP, CNRS, Aquitaine Regional Council and ITERG for the financial support of this research. They would also thank Centre de Recherche Paul Pascal (CRPP) for X-ray analyses, Centre d'Etude Stucturale et d'Analyse des Molécules Organiques (CESAMO) for MALDI-TOF, Equipex Xyloforest ANR-10-EQPX-16 XYLOFOREST for flash chromatography and Bordeaux Imaging Center (BIC) for TEM. Notes and references 26 A. Franzetti, I. Gandolfi, G. Bestetti, T. J. P. Smyth and I. M. Banat, Eur. J. Lipid Sci. Technol., 2010, 112, 617 -- 627. 27 D. K. F. Santos, R. D. Rufino, J. M. Luna, V. a Santos and L. a Sarubbo, Int. J. Mol. Sci., 2016, 17, 401. 28 C. W. Harland, Z. Botyanszki, D. Rabuka, C. R. Bertozzi and R. Parthasarathy, Langmuir, 2009, 25, 5193 -- 5198. 29 A. a Khan, S. H. Chee, R. J. McLaughlin, J. L. Harper, F. Kamena, M. S. M. Timmer and B. L. Stocker, ChemBioChem, 2011, 12, 2572 -- 2576. 30 V. A. Sarpe and S. S. Kulkarni, J. Org. 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Decatur, M. a. R. Meier and R. a. Gross, Macromolecules, 2013, 46, 3293 -- 3300. 24 Y. Peng, D. J. Munoz-Pinto, M. Chen, J. Decatur, M. Hahn and R. a Gross, Biomacromolecules, 2014, 15, 4214 -- 4227. 25 A. A. Khan, B. L. Stocker and M. S. M. Timmer, Carbohydr. Res., 2012, 356, 25 -- 36. ADMET polymerization of glycolipids: solid-state and self-assembly properties of unsaturated glyco- polyesters G. Hibert,a,b E. Grau,a,b D. Pintori,c S. Lecommandoux,a,b and H. Cramaila,b a.University of Bordeaux, Laboratoire de Chimie des Polymères Organiques, UMR 5629, IPB/ENSCBP, 16 avenue Pey-Berland, F-33607 Pessac Cedex, France. b.Centre National de la Recherche Scientifique, Laboratoire de Chimie des Polymères Organiques UMR 5629 F-33607 Pessac Cedex, France. c.ITERG, 11 rue Gaspard Monge, F-33600 Pessac, France. Experimental and Supporting Information Experimental Methods Synthesis Vinyl undecenoate (1) (transvinylation of undecenoic acid): Undecenoic acid (1 eq) and a 15 eq. excess of vinyl acetate (VAc) was poured in a vial for the microwave reactor. Then, the palladium acetate (0.05 eq.), and the potassium hydroxide (0.10 eq.) were added and the resulting reaction mixture was stirred under microwave at 60 °C for 2 h. The reaction mixture was diluted in DCM and then filtrated over celite to remove the palladium acetate, before removing the solvent with a rotary evaporator. The resulting residue was purified by silica gel flash chromatography using an elution gradient of 2-5% MeOH in DCM to give the vinyl undecenoate. Yield: 95 %. 1H NMR (DMSO-d6, 400MHz, δ (ppm)): 7.29 (m, 1H, =CH-OCO-), 5.81 (m, 1H, -CH=CH2), 4.97 (m, 2H, CH2=CH-), 4.88 (d, 1H, CH2=CH-OCO-), 4.56 (d, 1H, CH2=CH-OCO- 1 ), 2.37 (t, 4H, -CH2-COO-), 2.04 (m, 4H, -CH2-CH=CH-), 1.67 (m, 4H, -CH2-CH2-COO-), 1.30 (m, 20H, aliphatic -CH2-). Trehalose diundecenoate (2) (enzymatic esterification of trehalose): The lipase (2.8 g) was added to a mixture of trehalose (3 g, 9 mmol), vinyl ester (6.8 g, 22 mmol, 2.5 eq) in dry acetone (40 mL). The reaction mixture was stirred at 45 °C for 72 hr. After the reaction time, THF was added to well dissolve the diesters of trehalose, then the reaction mixture was filtered and solvent was removed in rotary evaporator. The obtained crude product was purified by silica gel flash chromatography using an elution gradient of 5-25% methanol in EtOAc-DCM (1:1) to give pure trehalose diesters as white solids. Yield: 50 %. 1H NMR (DMSO-d6, 400MHz, δ (ppm)): 5.78 (m, 2H, -CH=CH2), 5.04 (d, 2H, -OH, H4), 4.94 (m, 4H, CH2=CH-), 4.89 (d, 2H, -OH, H3), 4.82 (d, 2H, -CH-, H1), 4.76 (d, 2H, -OH, H2), 4.21 (d, 2H, -CH-, H6), 4.04 (m, 2H, -CH-, H6), 3.89 (m, 2H, - CH-, H5), 3.55 (m, 2H, -CH-, H3), 3.26 (m, 2H, -CH-, H2), 3.13 (m, 2H, -CH-, H4), 2.27 (t, 4H, -CH2- COO-), 2.01 (m, 4H, -CH2-CH=CH-), 1.51 (m, 4H, -CH2-CH2-COO-), 1.33-1.25 (m, 20H, aliphatic - CH2-) ). Undecenyl undecenoate (3) (transesterification): Undecenol (12.8 g, 0.08 mol.) was blended with 10-methylundecenoate (15 g, 0.08 mol.). TBD (5% mol.) was added as a catalyst. The reaction was performed under a nitrogen flow at 120°C for 2h, then the temperature was increased to 160 °C for 2h more under dynamic vacuum. Purification over silica gel flash chromatography was performed using cyclohexane/ethyl acetate 94/6 eluent. Yield: 76%. 1H NMR (400MHz, CDCl3, δ (ppm)): 5.8 (m, 1H, -CH=CH2), 4.9 (m, 2H, CH2=CH-), 4.0 (t, 2H, -CH2COO- ), 2.2 (t, 2H, -COOCH2-), 2.0 (m, 4H, -CH2-CH=CH-), 1.5-1.2 (m, 26H, aliphatic -CH2-). Synthesis of polymers ADMET polymerization Homopolymers (P0 and P100): Into a flame-dried Schlenk flask equipped with bubbler, undecenyl undecenoate (P0) (0.1 g, 0.3 mmol.) or trehalose diundecenoate (P100) (0.2 g, 0.3 2 mmol.) dried over-night under vacuum was dissolved in 2 mL of dry THF. Hoveyda-Grubbs 2nd generation metathesis catalyst (4 mol.%) was added and the reaction mixture was stirred under nitrogen atmosphere for 24 h at 45 °C. Then, 3 ml of ethyl vinyl ether were introduced into the flask to quench the reaction. The final glyco-polyester or was purified by precipitation in cold methanol. Copolymers (P33, P50 and P67): Into a flame-dried round Schlenk flask, trehalose diundecenoate (0.2 g, 0.3 mmol.) and the corresponding amount of undecenyl undecenoate (see Erreur ! Source du renvoi introuvable.) were mixed and dried over-night under vacuum. Then, the diene monomers were dissolved in 2 mL of dry THF and Hoveyda-Grubbs 2nd generation (4 mol.%) was added. The reaction mixture was stirred at 45 °C under nitrogen atmosphere for 24 h. Then, 3 mL of ethyl vinyl ether and 4 mL of THF were introduced to the flask. The final copolymers were purified by precipitation in cold methanol. Preparation of polymer self-assemblies in water The nano-particles were prepared using solvent displacement method by dialysis. (Co)polymers were solubilized in DMF and polymer solutions were then poured into dialysis membranes with molecular weight cutoff of 1kD. The membranes were beforehand soaked for 15 min and rinsed with deionized water. The membranes were then submerged in 2 L of deionized water and dialyzed under gentle magnetic stirring for 12 h. After 2 h and 4 h, the dialysis solution was replaced by fresh deionized water. At the end of the dialysis, milky solutions present inside the dialysis membranes were recover. Supporting Information 3 Fig. S1 1H NMR spectrum of undecenyl undecenoate performed in CDCL3. Fig. S2 1H NMR spectrum of vinyl undecenoate performed in CDCL3. 4 cbadbabaecdeCH2abbccadeddeffCH2CDCl3 Fig. S3 1H NMR spectrum of pure trehalose diundecenoate performed in DMSO-d6. 5 123456123456aabcbc25663aDMSOCH21OH3OH24Waterdbcdd 6 Fig. S4 NMR spectra of trehalose diundecenoate performed in DMSO-d6. A) 1H NMR, B) 13C NMR, C) 1H-1H COSY NMR, D) 1H-13C HSQC NMR, E) 1H-13C HMBC NMR. * corresponded to isomerize double bonds of trehalode diundecenoate 7 Fig. S5 ESI-MS of trehalose diundecenoate Fig. S6 Stacked 1H NMR spectra of trehalose diundecenoate (top) and the homopolymer P100 synthesized by ADMET from trehalose diundecenoate (bottom) performed in DMSO-d6. 8 3125663aDMSOCH214Waterbdc25663aDMSOCH214Waterbecdaabbcdeebbaa1245623456311245623456 Fig. S7 1H NMR spectra in DMSO of the copolymers obtained by ADMET, with ratio of trehalose undecenoate incorporated (100 % = 100 % trehalose diundecenoate). Fig. S8 MALDI-TOF analysis of P100 (Matrix 2,5-dihydroxybenzoic acid (DHB)) 9 P100P67P50P33P0111110.990.610.450.270Double bondH6'trehalose100 %61 %45 %27 %0 %Glycolipid feedGlycolipid incorporatedMunit (trehalose diundecenoate) = 646.36 g.mol-11 unit (trehalose diundecenoate) + H+2 unit (trehalose diundecenoate) + Na+Munit (trehalose diundecenoate) Munit (trehalose diundecenoate) Fig. S 9 MALDI-TOF analysis of P67 (Matrix 2,5-dihydroxybenzoic acid (DHB)) Fig. S10 MALDI-TOF analysis of P50 (Matrix 2,5-dihydroxybenzoic acid (DHB)) 10 647 = 1 unit (trehalose diundecenoate) + H+1285 =2 unit (undecenyl undecenoate) +1 unit (trehalose diundecenoate) + Na+Munit (trehalose diundecenoate) = 646.36 g.mol-1Munit (undecenyl undecenoate) = 308.27 g.mol-12 x Munit (undecenyl undecenoate) 647 = 1 unit (trehalose diundecenoate) + H+963 = 1 unit (undecenyl undecenoate) +1 unit (trehalose diundecenoate) + Na+-CH2Munit (undecenyl undecenoate) Munit (trehalose diundecenoate) = 646.36 g.mol-1Munit (undecenyl undecenoate) = 308.27 g.mol-1 Fig. S11 MALDI-TOF analysis of P33 (Matrix 2,5-dihydroxybenzoic acid (DHB)) Fig. S12 TGA curves of (co)polymers obtained by ADMET polymerization. 11 100200300400500020406080100Weight (%)Temperature (°C) P100 P67 P50 P33 P01581 = 3 units(undecenyl undecenoate) +1 unit (trehalose diundecenoate) + Na+-CH21255 = 4 units(undecenyl undecenoate) + Na+647 = 1 unit (trehalose diundecenoate) + H+975 = 1 unit (undecenyl undecenoate) +1 unit (trehalose diundecenoate) + Na+Munit (trehalose diundecenoate) = 646.36 g.mol-1Munit (undecenyl undecenoate) = 308.27 g.mol-1947 = 3 cyclicunits(undecenyl undecenoate) + Na+ Fig. S13 Auto-correlation functions (red) and relaxation time distribution (blue) (determined at 90°) scattering obtained from DLS for assemblies in water: (a) P100, (b) P67, (c) P50, (d) P33 12 11010010000102030IntensityD (nm)0,111010010001000010000010000000,00,20,40,60,81,0Correlation coefficientTime (s)1101001000051015202530IntensityD (nm)0,111010010001000010000010000000,00,20,40,60,81,0Correlation coefficientTime (s)1101001000051015202530IntensityD (nm)0,111010010001000010000010000000,00,20,40,60,81,0Correlation coefficientTime (s)1101001000051015202530IntensityD (nm)0,111010010001000010000010000000,00,20,40,60,81,0Correlation coefficientTime (s)(a)(b)(c)(d)
1912.09735	1	1912	2019-12-20T10:15:19	Slow-wave based magnonic diode	[ "physics.app-ph", "cond-mat.mes-hall" ]	Spin waves, the collective excitations of the magnetic order parameter, and magnons, the associated quasiparticles, are envisioned as possible data carriers in future wave-based computing architectures. On the road towards spin-wave computing, the development of a diode-like device capable of transmitting spin waves in only one direction, thus allowing controlled signal routing, is an essential step. Here, we report on the design and experimental realization of a microstructured magnonic diode in a ferromagnetic bilayer system. Effective unidirectional propagation of spin waves is achieved by taking advantage of nonreciprocities produced by dynamic dipolar interactions in transversally magnetized media, which lack symmetry about their horizontal midplane. More specifically, dipolar-induced nonreciprocities are used to engineer the spin-wave dispersion relation of the bilayer system so that the group velocity is reduced to very low values for one direction of propagation, and not for the other, thus producing unidirectional slow spin waves. Brillouin light scattering and propagating spin-wave spectroscopy are used to demonstrate the diode-like behavior of the device, the composition of which was previously optimized through micromagnetic simulations. simulations.	physics.app-ph	physics	Slow-wave based magnonic diode Mat´ıas Grassi,1 Moritz Geilen,2 Damien Louis,1 Morteza Mohseni,2 Thomas Bracher,2 Michel Hehn,3 Daniel Stoeffler,1 Matthieu Bailleul,1 Philipp Pirro,2 and Yves Henry1 1Universit´e de Strasbourg, CNRS, Institut de Physique et Chimie des Mat´eriaux de Strasbourg, UMR 7504, France 2Fachbereich Physik and Landesforschungszentrum OPTIMAS, Technische Universitat Kaiserslautern, Germany 3Institut Jean Lamour, Universit´e de Lorraine, UMR 7198 CNRS, Nancy, France (Dated: December 23, 2019) Spin waves, the collective excitations of the magnetic order parameter, and magnons, the as- sociated quasiparticles, are envisioned as possible data carriers in future wave-based computing architectures. On the road towards spin-wave computing, the development of a diode-like device capable of transmitting spin waves in only one direction, thus allowing controlled signal routing, is an essential step. Here, we report on the design and experimental realization of a microstruc- tured magnonic diode in a ferromagnetic bilayer system. Effective unidirectional propagation of spin waves is achieved by taking advantage of nonreciprocities produced by dynamic dipolar interactions in transversally magnetized media, which lack symmetry about their horizontal midplane. More specifically, dipolar-induced nonreciprocities are used to engineer the spin-wave dispersion relation of the bilayer system so that the group velocity is reduced to very low values for one direction of propagation, and not for the other, thus producing unidirectional slow spin waves. Brillouin light scattering and propagating spin-wave spectroscopy are used to demonstrate the diode-like be- havior of the device, the composition of which was previously optimized through micromagnetic simulations. I. INTRODUCTION The isolator, or wave diode, is an essential building block in wave computing architectures, which is neces- sary to mitigate unwanted reflections and prevent sig- nal backflow [1]. To act as a diode, that is, to transmit waves in only one direction, and, more generally, to ex- hibit nonreciprocity, a wave device operated in the linear regime must break time-reversal (T ) symmetry [2]. While breaking of T symmetry in photonic and electronic sys- tems requires complex time-dependent externally driven modulations, like propagating refractive index perturba- tion [3] or staggered commutation [4], it happens read- ily in gyrotropic systems, such as magnetically biased two-dimensional electron gases [5] or plasmas [6], and it exists intrinsically in ferro- and ferrimagnetic materials, which, in a bulk form, constitute the heart of standard microwave isolators [7]. Magnetic materials host spin waves with typical fre- quencies and wavelengths in the giga-terahertz and nano- micrometer ranges, respectively, which are considered as possible carriers for wave computing or fast information processing in so-called magnonic circuits [8]. In order to avoid power losses upon signal conversion to the electri- cal domain, an all-magnon approach [9], where full data processing would be performed within the spin-wave do- main, would be highly desirable. In recent years, im- portant steps have been taken in this direction, which include the experimental demonstration of a magnonic majority gate [10] and the design of a magnonic half- adder [11]. Designs of magnonic diodes [12] and uni- directional spin-wave emitters [13] relying on the chiral Dzyaloshinskii-Moriya interaction for producing nonre- ciprocity have been proposed theoretically, but have not been realized yet. Very recently, however, a unidirec- tional spin-wave emitter whose working principle is based on chiral magneto-dipolar interactions has been demon- strated experimentally [14]. In the present paper, we study both theoretically and experimentally a new kind of magnonic diode based on the concept of slow spin waves and relying on dipolar- induced nonreciprocity. Key to the operation of the de- vice is the Damon-Eshbach (DE) or magnetostatic sur- face wave (MSSW) configuration, where the equilibrium magnetization of a thin film lies in-plane and at right angle from the direction of spin-wave propagation [15]. This configuration is specific in that a dipolar coupling exists between the two (in-plane and out-of-plane) com- ponents of the dynamic magnetization [16], which hap- pens to be nonreciprocal. In the presence of top/bottom magnetic asymmetry, this coupling does not average out to zero and translates into counterpropagating surface waves with a given wave number having different fre- quencies [17 -- 21]. Here, we engineer the spin-wave dispersion of a thin film system consisting of two exchange-coupled ferromag- netic layers with different magnetic parameters so as to bring the group velocity of spin waves travelling in a par- ticular direction to very low values, while keeping those of counterpropagating waves large enough to ensure that they travel over long distances. We use Brillouin light scattering and propagating spin-wave spectroscopy [22] to demonstrate that these nonreciprocal slow spin waves allows one to build an efficient spin-wave diode out of a Co40Fe40B20/Ni80Fe20 bilayer waveguide. Two types of numerical simulations are used to support our exper- imental work. An in-house developed finite difference method, which performs a plane spin-wave normal mode analysis [23], is employed to compute dispersion relations and to optimize the composition of the investigated bi- layer system prior to its fabrication. The MuMax3 pro- gram [24], on the other hand, is used to produce mag- netization maps, mostly for illustration purposes. Im- portantly, an analytical model is first presented for ex- plaining in some depth the functioning of the proposed magnonic diode and shed light on the specific chiral dipo- lar couplings on which it relies. II. DESIGN PRINCIPLE AND THEORY A. Design principle The bilayer system that we consider has a total thick- ness l of several tens of nanometers. For such a thickness, the two lowest frequency MSSW branches are close to each other and hybridize, as revealed by the appearance of mode anticrossings in their dispersion [Fig. 1(a)]. This hybridization plays a crucial role in obtaining plateaus in the dispersion, which are synonymous of spin waves with vanishing group velocity. For a magnetically sym- metric film, the hybridization effect is similar for both positive and negative values of the in-plane wave vec- tor k [Fig. 1(a)]. In a bilayer film made of two magnetic materials with different saturation magnetization MS, on the contrary, mode coupling is nonreciprocal [Fig. 1(b)]: For one sign of k (positive here), modes repel each other (much) more strongly than for the other sign [25]. This asymmetry leads quite systematically to the existence of a rather wide k-range where the first MSSW mode is only weakly dispersive and group velocity is low [gray shaded regions in Fig. 1(b-d)], while it remains large for counterpropagating waves with the same frequency. For large thicknesses, mode repulsion can even lead to surface waves exhibiting an unusual backward character (phase velocity vp = ω/k and group velocity vg = ∂w/∂k with opposite signs), see arrow in Fig. 1(d). We note that a similar backward inflexion associated with the existence of a nonreciprocal magnetostatic interface mode [26, 27] was also predicted for magnetic bilayers in the hypothet- ical pure dipolar regime [28]. The nonreciprocal flattening of the dispersion relation of MSSW modes in bilayers is quite generic. A priori, it can be obtained using any two magnetic materials with sufficiently different MS values [29]. Once these are cho- sen, designing an optimal diode device amounts to ad- justing the composition of the bilayer (total thickness l and/or individual thicknesses of the two layers lj, with j = 1, 2) so as to obtain a frequency plateau as flat as possible [Fig. 1(b-d)]. Numerical simulations show that this can usually be achieved in many ways (not shown). With the ferromagnetic alloys chosen for the present study, namely Co40Fe40B20 (MS,CoFeB = 1270 kA/m, ACoFeB = 17 pJ/m) and Permalloy (MS,Py = 845 kA/m, APy = 12.8 pJ/m), lCoFeB = lPy = 19 nm is a good choice [Fig. 1(b)]. In the forthcoming experimental sec- tion (Sec. III), we shall use a different composition of the bilayer, namely {lCoFeB = 20 nm, lPy = 26 nm}, which 2 FIG. 1. (a) Computed dispersion relations for the two lowest frequency MSSW modes in a 38 nm thick single layer with an exchange constant of 15 pJ/m and a saturation magnetization of 1060 kA/m submitted to a transverse applied magnetic field µ0H0 = 30 mT. The gray circles indicate mode anticrossings. (b-d) Same as in (a) for CoFeB/Py bilayers with (b) lCoFeB = lPy = 19 nm, (c) lCoFeB = lPy = 17 nm, and (d) lCoFeB = lPy = 25 nm. The gray ellipses highlight regions where the group velocity of MSSW mode 0 is small. yields a slightly broader plateau. B. Theoretical model To describe the peculiar magnetization dynamics in a bilayer film and to account for the occurrence of nonre- ciprocal mode hybridization, we may resort to the the- ory of dipole-exchange spin waves [30] and use a simi- lar analytical approach as previously developed to ac- count for frequency nonreciprocities of surface waves in- duced by asymmetric surface anisotropies [20]. Here, for the sake of simplicity, we make two strong assump- tions: i) First, we take l1 = l2, which allows us to decompose the profile of the saturation magnetization through the film thickness MS(x) into the sum of a mean (cid:104)MS(cid:105) = (MS,1 + MS,2)/2 and an antisymmetric deviation (cid:104)MS(cid:105) a(x), where a(x) = β sgn(x) and β = MS,1−MS,2 de- notes the contrast of saturation magnetization between the two materials; ii) Second, we assume that the ratio of the exchange constant to the saturation magnetization takes a constant value A1/MS,1 = A2/MS,2 = (cid:104)A(cid:105)/(cid:104)MS(cid:105) throughout the film. In these conditions, the linearized Landau-Lifshitz equation for plane spin waves of the form m(x, z, t) = MS(x) n(x, z, t) = MS(x) η(x) ei(ωt−kz) can MS,1+MS,2 vg~0vg< 0vg> 0MSSW 1MSSW 0510152025-40-2002040510152025-40-2002040/2 (GHz)(a)(b)/2 (GHz)k (rad/µm)(c)k (rad/µm)(d)be written as 3 (cid:18) ∂2 iωη(x) = − γµ0H0 η(x) × y ∂x2 − k2 + γµ0(cid:104)MS(cid:105) 2(cid:104)A(cid:105) (cid:104)MS(cid:105) + γ l/2 −l/2 (cid:19) η(x) × y (1) ¯¯Gk(x−x(cid:48))[1+a(x(cid:48))](η(x(cid:48))× y) dx(cid:48) where γ is the gyromagnetic ratio [31], µ0 is the per- mittivity of vacuum, y is a unit vector along the ap- plied magnetic field H0 [Fig. 2], and ¯¯Gk is the magne- tostatic Green's function. Using as a vector basis the x and z components of the first two unpinned exchange modes with homogeneous (n = 0) and fully antisymmet- ric (n = 1) profiles of the magnetization precession an- gle across the film thickness [32], that is, the four vector set {S0 x, S0 z, S1 x, S1 z} with S0(x) = 1√ and S1(x) = l l sin( πx l ), Eq. 1 can be rewritten in the form of an eigenvalue equation iΩ ¯η = ¯¯C ¯η, where Ω = ω/(γµ0(cid:104)MS(cid:105)) is a dimensionless frequency, ¯η = (η0,x, η0,z, η1,x, η1,z)T, and ¯¯C is a dynamic matrix [20]. (cid:113) 2 As an opportunity to introduce useful notations, we first discuss the case of a single layer with exchange con- stant (cid:104)A(cid:105) and saturation magnetization (cid:104)MS(cid:105) (β = 0). For such "unperturbed" system, the ¯¯C matrix writes (cid:18) ¯¯C00 ¯¯C10 (cid:19) ¯¯C01 ¯¯C11 =  0 −Ω0,x iQ 0  , Ω0,z −iQ 0 0 0 0 −iQ −Ω1,x 0 iQ Ω1,z 0 ¯¯C = with (2) (3) Ω0,x= 1 − P00 + h + Λ2k2, Ω0,z = P00 + h + Λ2k2, Ω1,x= 1 − P11 + h + Λ2k2 + Λ2π2 Ω1,z = P11 + h + Λ2k2 + Λ2π2 , l2 , l2 where 1−P00 = 1−e−kl kl , P00, 1−P11, and P11 = k2l2 π2+k2l2 (1− 2 k2l2 1+e−kl kl ) are k-dependent self-demagnetizing fac- π2+k2l2 tors for the S0 x, S0z, S1 x, and S1z basis components, re- spectively, h = H0/(cid:104)MS(cid:105) is a dimensionless applied mag- netic field and Λ2 = 2(cid:104)A(cid:105)/(µ0(cid:104)MS(cid:105)2). The coupling be- tween the uniform and antisymmetric sets of basis func- tions is described through the off-diagonal ¯¯C01 = ¯¯C∗ 10 blocks, which involve the nonreciprocal mutual demag- netizing factor Q = Solving for det( ¯¯C−iΩ¯¯1) = 0, where ¯¯1 is the identity matrix, yields the eigenfrequencies of the first two hybrid MSSW modes √ π2+k2l2 (1 + e−kl). 2kl FIG. 2. Schematic representation of the bilayer system con- sidered in the analytical model of Sec. II B. in a single layer (cid:115) 2 Ω2 Ω2 0,1 = 00 + Ω2 11 − Q2 (cid:21) where Ωnn = (cid:112)Ωn,xΩn,z (n = 0, 1) are the dimen- (P00−P11)2− Λ4π4 l4 00)2 + 4Q2 11− Ω2 ∓ 1 2 (cid:20) (Ω2 (4) , sionless frequencies of the uncoupled uniform and anti- symmetric precession modes, ¯η0 = (η0,x, η0,z, 0, 0)T and ¯η1 = (0, 0, η1,x, η1,z)T, respectively. Noticeably, the fre- quencies of the hybrid modes, Ω0 and Ω1, depend on Q2, meaning that, although Q obeys Q(−k) = −Q(k), hybridization does not effectively produce nonreciprocity [Fig.1(a)]. The basic reason for this is that hybridization implies an action of mode ¯ηm on mode ¯ηn (for instance, under the influence of mode ¯η1, mode ¯η0 acquires an anti- symmetric component) as well as a back-action of mode ¯ηn on mode ¯ηm, both of which are proportional to the coupling factor Q. With these considerations in mind, we are now ready to consider the case of a magnetic bilayer. When β (cid:54)= 0, the diagonal elements in the ¯¯Cnn blocks and the off- diagonal elements in the ¯¯Cn(cid:54)=m's are no longer zero and the dynamic matrix becomes (see Appendix) Q(cid:48) 0 0 iP (cid:48) 0 0 00 Q(cid:48)−I(cid:48) iP (cid:48) Q(cid:48) −iP (cid:48) 0 0 −iP (cid:48) ¯¯C(β) = ¯¯C(0) +  , Q(cid:48)−I(cid:48) (5) 0 0 11 00 11 where ¯¯C(0) is given by Eq. 2 and (cid:20) 1 kl P (cid:48) 00= P (cid:48) 11= I(cid:48) = Q(cid:48) = 2kl (π2 +k2l2)2 √ 2 2 β, √ π 2 2 (cid:20) π π2 +k2l2 2 (cid:18)kl (cid:19)(cid:21) π−kl e−kl/2(cid:17)2 (cid:16) (cid:16) 1−e−kl/2(cid:17) + k2l2 β (cid:18) 1 π − 1−e−kl 2kl (cid:19)(cid:21) β. sinh(kl) − 2 sinh β, (6) Not surprisingly, all newly non-zero matrix elements are proportional to the contrast in saturation magnetization vg~0vg< 0vg> 0MSSW 1MSSW 0510152025-40-2002040510152025-40-2002040/2 (GHz)(a)(b)/2 (GHz)k (rad/µm)(c)k (rad/µm)(d)(e)4 β. The coefficients P (cid:48) nn describe the additional self- demagnetizing effects produced by the magnetic asym- metry on uncoupled modes ¯ηn (n = 0, 1). As revealed by the imaginary character of the corresponding matrix elements in the ¯¯Cnn blocks, these take the form of trans- verse dipole fields, which oscillate with a phase differ- ence of π/2 with respect to the dynamic magnetization components creating them. The coefficients Q(cid:48) and I(cid:48), on the other hand, account for the additional mutual- demagnetizing effects produced in the presence of mag- netic asymmetry. They describe how hybridization be- tween the uniform and fully antisymmetric modes is af- fected in a bilayer. The coefficient I(cid:48), in particular, cor- responds to the local part of the dipole interaction, that is, the usual perpendicular-to-plane demagnetizing effect (see Appendix). It does not depend on k and plays a similar role as a difference in magnetic anisotropies in the top and bottom parts of the film [20]. Therefore, by analogy, we expect it to be responsible for frequency non- reciprocity. Solving for det[ ¯¯C(β)−iΩ¯¯1] = 0 and keeping only terms up to first order in β yields the following dispersion rela- tion for the two lowest MSSW modes in a bilayer [33] 0 − Ω2)(Ω2 1 − Ω2) (Ω2 (7) − 2QΩ [(Q(cid:48)−I(cid:48))(Ω1,z − Ω0,z) + Q(cid:48)(Ω1,x − Ω0,x)] = 0. Treating further QQ(cid:48) and QI(cid:48) as small parameters, in a perturbative manner, the eigenfrequencies of these modes can be obtained as Ω0,1(β) = Ω0,1(0) ± ∆Ω(β) where Ω0(0) and Ω1(0) are given by Eq. 4 and ∆Ω(β) = Q 1(0)−Ω2 Ω2 0(0) [(I(cid:48)− Q(cid:48))(Ω1,z−Ω0,z) −Q(cid:48)(Ω1,x−Ω0,x)]. (8) (9) The expression of ∆Ω involves two products of dipolar matrix elements, QQ(cid:48) and QI(cid:48). In both of them, one term (Q(cid:48) or I(cid:48)) is even in k and the other (Q) is odd. Then ∆Ω is odd in k and, since Ω0(0) and Ω1(0) are fully recipro- cal, 2∆Ω is a measure of the frequency nonreciprocities for the two hybrid MSSW modes. Noticeably, the nonre- ciprocities of these hybrid modes have the same magni- tude but opposite signs. In both QQ(cid:48) and QI(cid:48) products, also, one term (Q(cid:48) or I(cid:48)) connects the same components (either x or z) for the two uncoupled modes ¯ηn (n = 0, 1), while the other term (Q) connects two different compo- nents (x and z). These peculiar combinations allow for indirect chiral couplings (of dipolar origin) to develop between the two components of each mode ¯ηn, through hybridization with mode ¯ηm(cid:54)=n. In Fig. 3(a-c), we illus- trate this crucial point in the simplest case of the ¯η0 mode and of the QI(cid:48) product, which plays by far the most im- portant role among the two products, as one may easily verify numerically. Figure 3(d) compares predictions of the above analytical model (Eqs. 8 and 9) with results FIG. 3. (a) Indirect QI(cid:48) coupling between the in-plane and out-of-plane components of uniform mode ¯η0, through hy- bridization with antisymmetric mode ¯η1. Schematic represen- tation of ¯η0 for positive k (solid arrows) and negative k (open arrows). (b) Illustration of the I(cid:48) coupling (β > 0). For a bi- layer, the homogeneous precession angle in ¯η0 translates into an asymmetric distribution of dynamic magnetization. The out-of-plane component of its antisymmetric part (thin green arrows) generates additional magnetic charges and, in turn, an antisymmetric dipole field (thick green arrows), which cou- ples to the out-of-plane component of ¯η1. (c) Illustration of the Q coupling. The out-of-plane component of ¯η1 (thin yel- low arrows) produces a symmetric in-plane dipole field (thick yellow arrows), which couples to the in-plane component of ¯η0, in opposite ways depending on the sign of k [compare the rel- ative orientation of the thick horizontal arrows in panels (a) and (c)]. (d) Dispersion relations of the two lowest MSSW modes in a bilayer with l1 + l2 = 34 nm, (cid:104)MS(cid:105) = 1000 kA/m, (cid:104)A(cid:105) = 15 pJ/m, and β = 0.1. Predictions of the analytical model (Eqs. 8 and 9) and results of numerical simulations are shown as solid and dotted lines, respectively. from numerical simulations in the case of a bilayer with l1 + l2 = 34 nm, (cid:104)MS(cid:105) = 1000 kA/m, (cid:104)A(cid:105) = 15 pJ/m, and β = 0.1. A rather good agreement is observed, which confirms the essential role played by the QQ(cid:48) and QI(cid:48) chiral couplings identified through the analytical mod- elling in producing nonreciprocal mode repulsion. We note that these chiral couplings bear some resemblance -40-2002040510152025/2 (GHz)k(rad/µm)(d)(b)0++‐‐‐‐++++‐‐I'++++‐‐0,x(a)0,zMS,2MS,1xzy++‐‐(c)1Q‐‐++‐‐++5 FIG. 4. (a-c) BLS spectra recorded in the DE configuration (µ0H0 = +30 mT) on a Co40Fe40B20(20nm)/Ni80Fe20(26nm) bilayer film (symbols), for three different values of the in-plane wave vector: (a) k = 8.1 rad/µm, (b) k = 11.8 rad/µm, and (c) k = 15.2 rad/µm. Lines are guides to the eye. (d) Dispersion relations of the two lowest MSSW modes deduced from BLS data (open symbols) and comparison with predictions from numerical simulations (lines). Solid symbols correspond to data from a complementary ferromagnetic resonance experiment. (e) Frequency nonreciprocities ∆fn(k) = fn(−k) − fn(+k) of MSSW modes 0 and 1. As in (d), symbols and lines correspond to experimental and numerical data, respectively. with those at play in the unidirectional emission of spin waves by nanoscale magnetic transducers [14, 34]. Here, however, they are not introduced through transduction (excitation/detection) but they are an intrinsic property of the medium, which supports spin wave propagation. III. EXPERIMENTAL RESULTS A. Sample fabrication The bilayer films used in the present work have been deposited on natively oxidized intrinsic (100)Si substrates by DC magnetron sputtering from mate- rial targets with nominal compositions Co40Fe40B20 and Ni80Fe20. Deposition of the magnetic stack was preceded by that of a 3 nm thick Ta seed layer, for ensuring low layer roughness, and followed by that of a 3 nm thick Au overlayer, for protecting the magnetic alloys against oxydation. For propagating spin-wave spectroscopy and micro-focussed Brillouin light scattering experiments, de- vices have been fabricated out of these films by means of standard cleanroom processes, involving laser and elec- tron beam lithographies, as well as ion milling [19, 35]. These consist of 10 µm wide magnonic waveguides cov- ered with a 120 nm thick insulating layer of silicon ox- ide and two pairs of emitting/receiving microwave an- tennas, made from a Ti(10nm)/Al(90nm) stack, placed above (see Sec. III C). B. Nonreciprocal dispersion relations The dispersion relations of thermally excited spin waves in the Co40Fe40B20(20nm)/Ni80Fe20(26nm) bilayer system have been determined using wave-vector resolved Brillouin light scattering experiments [36, 37] carried out on a plain film. To evidence the nonreciprocal char- acter of these dispersions, both Stokes and anti-Stokes peaks have been recorded for the two possible polarities of the applied magnetic field, in the MSSW configuration (H0 ⊥ k). Figure 4(a-c) shows BLS spectra obtained with µ0H0 = +30 mT, at different values of the in-plane wave vector k. Four different peaks, two Stokes and two anti-Stokes, 05101520-4-2024f0,1 (GHz)k (rad/µm)(e)103104101102103-20-15-1010152010210310411.8 rad/µm(b)BLS intensity (counts)8.1 rad/µm(a)(c)Frequency shift (GHz)15.2 rad/µmMSSW 0MSSW 1MSSW 0MSSW 1-20-10010205101520f (GHz)k (rad/µm)(d)can be identified, which are related to the first (red) and second (blue) MSSW branches. These peaks have been fitted to Lorentzian lines in order to extract their cen- tral frequencies and thereby reconstruct the f (k) curves. The obtained dispersion relations are found in very good agreement with theoretical predictions [Fig. 4(d)]. As re- quired to fulfill our ambition to build a magnonic diode, a well defined frequency plateau is present at about 12.5 GHz in the dispersion of MSSW mode 0, which cor- responds to the anti-Stokes peak with k-independent po- sition in Fig. 4(a-c). Clear experimental evidence is then provided for the occurrence of nonreciprocal slow spin waves in our system. We note that the anti-Stokes peak with highest fre- quency has a small amplitude, whatever k [Fig. 4(a-c)]. The peak even becomes undetectable for wave-vector val- ues exceeding 17 rad/µm, hence the lack of some (blue) data points in Fig. 4(d,e). This is attributed to the fact that, as verified in numerical simulations (not shown), MSSW mode 1 has very small amplitude in the up- most part of the bilayer film, whose magneto-optic con- tribution dominates the BLS signal. We also note that the frequency nonreciprocities of the two MSSW modes, ∆fn(k) = fn(−k) − fn(+k) (n = 0, 1) show very spe- cific behaviors [Fig. 4(e)]. First, ∆f0(k) and ∆f1(k) are almost equal in absolute value and opposite in sign, which comes naturally in our analytical theory of the nonrecip- rocal hybridization (Sec. II B). Second, these quantities do not vary monotonously as a function of k. Instead, they exhibit a local extremum followed by a change of sign at about 5 rad/µm. Following the same line of thought as used to explain the nonintuitive localization of dipole-exchange MSSW modes [16, 19], this change of sign can be ascribed to a transition between a regime dominated by exchange across the film thickness, in the k→ 0 limit, to a regime where in-plane dipole fields gain importance, at larger k. Upon hybridization, indeed, out-of-plane exchange interactions and dipole interactions produce additional torques which compete with each other and yield terms with opposite signs in the expression of ∆Ω (Eq. 9). To better see this, we may expand the elements of the dy- namic matrix ¯¯C (Eqs. 3 and 6) in Taylor series around kl = 0. Keeping only terms up to second order in kl, we obtain ∆Ω(β) = 8kl 1(0)−Ω2 0(0)] π3[Ω2 (10) where we identify the first term between the square brackets, i.e. Λ2π2/l2, as being of pure exchange ori- gin and the second one, proportional to the k-dependent self-demagnetizing factor P00(k) (cid:39) kl 2 , as arising from dipole-dipole interactions. According to this expression, a change of sign of ∆Ω is expected at the particular value k∗ = [ l Λ2π2 )]−1, which indeed amounts to a few radians per micrometer for magnetic materials with Λ ∼ 4 nm and thickness l in the 40−50 nm range. Inter- 2 (3 + l2 (cid:20) Λ2π2 l2 − kl 2 (cid:18) 1+3 Λ2π2 l2 (cid:19)(cid:21) β, 6 FIG. 5. Propagating spin-wave spectroscopy. (a) False color scanning electron micrograph of a PSWS device with a dis- tance D = 5 µm between the emitting and receiving antennas. (b) Real part of the spin-wave induced change in mutual in- ductance ∆Lij as a function of the excitation frequency f (µ0H0 = +30 mT), for spin waves propagating from antennas 1 to antennas 2 (k > 0, red squares) and vice versa (k < 0, black circles), in the device of panel (a). (c) Upper limit (fmax, blue circles) and lower limit (fmin, red squares) of the frequency gap for rightward propagating spin waves as a function of the applied magnetic field, as deduced from PSWS data such as shown in panel (b). estingly, such a change of sign has also been predicted for films where breaking of the top/bottom magnetic symme- try is not obtained through a blockwise variation of MS, like here, but rather by a grading of saturation magne- tization across the thickness [21]. In contrast, it has not been observed for bilayers where the two magnetic mate- rials, being separated by a non-magnetic spacer, are only coupled through long range dipole interactions [38, 39]. This further demonstrates the essential role played by short range out-of-plane exchange-coupling in this phe- nomenon. C. Magnonic diode behavior 1. Propagating spin-wave spectroscopy In order to clearly demonstrate the diode-like behav- ior of the studied bilayer system, propagating spin-wave S20 µmH0S(a)SGGGG12(b)fminfmax1020304050121416fmin,max (GHz)µ0H0 (mT)(c)12131415-0.20.00.2Re(Lij) (pH)f (GHz)spectroscopy (PSWS) experiments have been carried out on specially designed devices [Fig. 5(a)], each one con- taining a pair of 50 µm-long, 10 µm-wide bilayer waveg- uides and two pairs of single-wire antennas connected in parallel. This device layout, in which spin-waves are travelling simultaneously along two magnetic buses, was chosen to ensure a good symmetry match with Ground- Signal-Ground (GSG) microwave probes. Importantly, the 200 nm wide single-wire antennas used here can cou- ple inductively to spin waves with a broad range of wave vectors, 0 ≤ k ≤ kmax, where kmax (cid:39) 12 rad/µm. The distance between the emitting and receiving antennas (D = 2 µm or 5 µm) is adapted to the typical attenu- ation length expected for surface spin waves with such k values in a Co40Fe40B20(20nm)/Ni80Fe20(26nm) bilayer. A typical PSWS experiment, as reported below, is per- formed in the following way. A vector network analyzer (VNA) is connected to the antennas through GSG probes to serve both as a generator and as a detector for deter- mining the complex mutual inductance Lij of the two an- tennas pairs. Upon injection of a current with adequate frequency f in the emitting antennas (index j), these couple inductively to the magnetization of the waveg- uides and spin waves are excited. If those waves travel far enough and reach the receiving antennas (index i) be- fore being fully damped, a microwave magnetic flux with frequency f is picked up. The ratio of the measured flux to the injected current defines the mutual inductance Lij of interest [40]. In practice, in order to extract spin-wave related signals more accurately, relative measurements are systematically taken, wherein a background signal, which is acquired at much larger applied magnetic field so that no spin wave resonance occurs, is subtracted from the raw data. Figure 5(b) shows the real part of the spin-wave in- duced change in mutual inductance ∆Lij as a function of frequency for a device with a relatively large distance between the emitting and receiving antennas [D = 5 µm, see Fig. 5(a)], submitted to a transverse in-plane mag- netic field µ0H0 = +30 mT. The two data sets presented correspond to opposite directions of spin-wave propaga- tion. Comparing them, one immediately sees that the spin-wave signal at 12.5 GHz ≤ f ≤ 14.5 GHz is vanish- ingly small for k > 0 (red symbols), meaning that no spin wave travel from the left antennas to the right anten- nas, whereas it is comparatively large for k < 0 (black symbols) as spin waves do propagate effectively from the right antennas to the left ones. This nonreciprocal behav- ior is of course related to the presence of a plateau in the positive-k part of the dispersion relation of MSSW mode 0 [Fig. 4(d)], which has two main consequences. First, rightward propagating spin waves with f ∼ 12.5 GHz and 0 ≤ k ≤ kmax are excited by the left antennas but, due to their very low group velocity, they die out un- der the effect of magnetic damping before reaching the receiving antennas. Second, due to the large extension of the plateau, the group velocity of MSSW mode 0 be- comes sizable again only for k values, which lie far beyond 7 FIG. 6. Spin-wave propagation in a device with D = 2 µm. (a,c) Real and imaginary parts of ∆Lij as a function of fre- quency for k < 0 (a) and k > 0 (c). (b) Dispersion relations of the lowest (open symbols) and second lowest (solid symbols) MSSW branches deduced from the experimental spin-wave signals shown in (a) and (c), and spin-wave spectral weight (color map) as obtained from MuMax3 micromagnetic sim- ulations. See text for details. (d) Simulated cross-sectional map of the in-plane component of the normalized dynamic magnetization, nz = mz/MS, for an excitation frequency of 12.5 GHz. The lateral extension of the single-wire antenna is indicated by the brown horizontal bar and the insulating layer of silicon oxide is sketched as a yellow layer (not to scale vertically). The AC current assumed in the antenna is 3 mA, which yields an in-plane magnetic field of about 3 mT at the top surface of the bilayer, right beneath the source. the k range accessible with the used antennas, meaning that rightward propagating MSSW 0 spin waves with fre- quency well above 12.5 GHz are simply not produced. For f ≥ 14.5 GHz, MSSW mode 1 eventually gets excited so that a clear spin-wave signal is transmitted again for both directions of propagation. An effective forbidden gap with a width of about 2 GHz is thus formed for right- ward propagating spin waves [shaded zone in Fig. 5(b)]. In view of the possible application of this phenomenon, it is worth mentioning that the gap can naturally be shifted up and down in frequency by adjusting the amplitude of the applied magnetic field. A tunability of the order of 50 MHz/mT could be measured experimentally over the 10-50 mT range [Fig. 5(c)]. Because the wave vector k is constrained to change ac- cording to the dispersion relation k(f ), the phase delay kD acquired by spin waves after propagation over the dis- tance D varies continuously as the frequency f is swept. This variation in phase delay translates into pronounced oscillations of the recorded spin-wave signal [Fig. 5(b)]. As we shall describe below, this provides us with a way to extract the wave vector value corresponding to each driv- ing frequency f . For that, one needs to record both the -12-606126810121416-202-101k (rad/µm)f (GHz)L12 (pH)L21 (pH)ReReImIm(a)(c)k>0k<0(b)zxPyCoFeB1 µm10 nm0.0050-0.005nz(d)real and imaginary parts of the spin-wave induced change in mutual inductance over a large range of frequencies [Fig. 6(a,c)] encompassing the ferromagnetic resonance frequency (FMR), fFMR = f0(k = 0), which corresponds to the onset of the oscillations [41]. From such data, the spin-wave wave vector can be determined as k(f ) = ± φij(f ) − φ0 . D (11) In this expression, the ± sign accounts for the change of sign of k upon reversing the direction of spin-wave propagation [+ corresponding to spin waves travelling from the left antennas (j = 1) to the right ones (i = 2)], φ0 = π 2 is the reference phase at fFMR, where ∆Lij is purely imaginary (pure absorption), and, more impor- tant, φij(f ) = arg[∆Lij(f )] + 2nπ (with n integer) is the spin-wave phase, which must be unwrapped in a contin- uous manner, starting from fFMR. The open symbols in Fig. 6(b) show the dispersion relation of MSSW mode 0 reconstructed by applying the above method (Eq. 11) to ∆Lij data recorded be- tween 5.8 and 14.5 GHz [42]. As expected, for k > 0, the dispersion can only be followed up to approx- imately +7 rad/µm, which corresponds to the lower edge of the frequency plateau. In contrast, for k < 0, it can be followed down to -12 rad/µm, thus confirm- ing the ability of our PSWS device to probe the ex- pected wave-vector range [−kmax, +kmax]. As a sup- port to our conclusions, Figure 6(b) also displays in the background the "weighted" dispersion relation computed for a CoFeB(20nm)/Py(26nm) bilayer with the MuMax3 software using space and time Fourier transforms of in- plane magnetization traces obtained under square pulse excitation of 10 ps duration. The simulations, which use periodic boundary conditions in both longitudinal (z) and transverse (y) in-plane directions and cell sizes hx = 0.5 nm, hy = 10 nm, hz = 4 nm, include a realis- tic spatial distribution for the excitation field produced by the antenna and account for magnetic losses through Gilbert damping factors of 0.008 and 0.012 for CoFeB and Py, respectively (see Sec. III C 2). A very good agreement between the two kinds of data may be observed, particu- larly regarding the asymmetric way in which the ampli- tude of the transmitted spin-wave vanishes upon increas- ing f . Figure 6(d) shows a cross-sectional map of the dynamic magnetization as generated under continuous- wave excitation at f = 12.5 GHz, which illustrates how this nonreciprocity translates in real space: Once the excitation frequency enters the gap, the dynamic mag- netization profile becomes essentially evanescent on the right side of the source as the far-field coupling of the antenna to the magnetic precession vanishes. Notice- ably, micromagnetic simulations reveal a similar behav- ior in the "overshoot" regime, where the dispersion of MSSW mode 0 contains a region with backward charac- ter [Fig. 1(d)]: The lower frequency limit of the gap then corresponds to the local maximum in the ω(k) curve of MSSW mode 0. 8 2. Micro-focussed Brillouin Light scattering To visualize directly the spatial decay of spin waves, we have performed micro-focussed BLS imaging [37] on a similar device as used for PSWS [Fig. 5(a)]. In those experiments, the spin-wave intensity has been mapped next to an antenna while microwave power (-5 dBm) was continuously injected into it. In the DE configura- tion, switching the direction of the equilibrium magneti- zation is equivalent to reversing the wave vector k [19, 43]. Then, instead of looking on both sides of the source for imaging counterpropagating waves, we have concentrated ourselves on one side and recorded spin-wave intensity maps for the two polarities of the transversally applied magnetic field. Accordingly, the data obtained for H0 < 0 are mirrored horizontally in Fig. 7(a,c). The benefit of this experimental strategy is that it allows us probing counterpropagating spin-waves in the very same optical conditions, thus avoiding artifacts related, for instance, to differences in the surface state of the waveguide. To support these observations, MuMax3 simulations have also been performed for a finite, 50 µm-long, 10 µm- wide bilayer strip. The expected BLS signal has been calculated by assuming that it is mostly related to the out-of-plane component of the dynamic magnetization (mx) at the top surface of the magnetic medium. As in the experiments, spin waves were excited by an al- ternating magnetic field with frequency f produced by a 100 nm thick, 200 nm wide antenna, located 120 nm above the spin-wave conduit. For each magnetic cell (with size hx = 4 nm, hy = 40 nm, hz = 8 nm), the time dependence of mx was recorded over a full period 1/f , in the steady excitation regime, and analyzed to extract its maximum value m0,x. Finally, normalized intensity maps were constructed, which show m0,x/max(m0,x)2, either with the full resolution of the simulations [top pan- els in Fig. 7(e,f)] or with a degraded resolution mimick- ing that of micro-focussed BLS images [bottom panels in Fig. 7(e,f)]. Overall, a good agreement is obtained between experimental and computed images, assuming damping values of 0.008 and 0.012 for CoFeB and Py, respectively [44]. Quite naturally, upon pixelation, sharp features, like those related to localized edge modes, tend to be washed out. Yet, we note that for f = 11 GHz, a long oblique contrast arising from the interference be- tween the fundamental and higher-order width modes of the waveguide remain discernible [Fig. 7(a,e)]. Expectedly, for frequencies in the range 6-12 GHz (i.e. below the frequency plateau), significant spin-wave inten- sity is systematically detected up to distances of several micrometers from the antenna [Fig. 7(a,b,e)]. We note that although plateau-related spin-wave filtering is not yet active, a difference in intensity may be observed be- tween the two directions of propagation. This is nothing but the usual amplitude nonreciprocity of magnetostatic surface waves, which follows from the fact that a trans- ducer placed on one side of a waveguide couples differ- ently to counterpropagating surface waves [45]. When the 9 FIG. 7. (a-d) Experimental BLS intensity maps for excitation frequencies of 11 GHz (a,b) and 13 GHz (c,d) and applied magnetic fields µ0H0 = −30 mT (a,c) and µ0H0 = +30 mT (b,d) (logarithmic scale). The dashed lines indicate the position of the waveguide edges. (e,f) Computed BLS intensity maps for f = 11 GHz (e) and f = 13 GHz (f), µ0H0 = +30 mT. The current assumed in the antenna is 0.1 mA (linear regime). In each panel, the upper part shows raw data whereas the lower part shows pixelated data obtained by averaging raw data over rectangular areas. See text for further details. (g,h) z-profiles of the BLS intensity integrated over the width of the waveguide as deduced from the maps shown in panels (a-d). Open and solid symbols correspond to f = 11 GHz and f = 13 GHz, respectively. The lines are fits of the experimental data to the expression I(z) = I0 exp(−z/LD) + INoise. (i) Variation of the decay length of the spin-wave intensity, LD, with the excitation frequency f for spin waves propagating to the right (H0 > 0, red) and to the left (H0 < 0, black). The symbols and the solid lines are data derived from experiments and simulations, respectively. The horizontal dashed line indicates the smallest spin-wave wavelength compatible with the chosen antenna design. frequency reaches 13 GHz (above the frequency plateau), on the other hand, the spin-wave intensity remains rela- tively large for one direction of propagation [Fig. 7(c,f)] but drops abruptly for the opposite one [Fig. 7(d,f)]. Based on the discussion above, we naturally attribute this fast drop in intensity to the phenomenon of spin- wave slow-down associated with the presence of a plateau in the positive-k part of the dispersion relation of MSSW mode 0. This phenomenon is best illustrated by extracting the spin-wave decay length LD from the BLS data. For this, one may simply average the spin-wave intensity over the width of the waveguide (i.e. along y) so as to mitigate finite-width effects [46], plot the integrated intensity as a function of the space coordinate along the direction of propagation, z, and fit this dependence to an expo- nential decay of the form I(z) = I0 exp(−z/LD) + INoise [see Fig. 7(g,h)]. Figure 7(i) shows the variation of LD with f obtained treating both experimental and numer- ical data in this manner. A clear difference in behavior may be observed depending on the sign of k. For spin waves travelling to the left (k < 0, black circles and line), LD decreases steadily with increasing f . For spin waves travelling to the right (k > 0, red squares and line), in contrast, this steady decay is interrupted by a sudden drop in LD as f reaches the frequency of the plateau, fp. Beyond fp, LD becomes smaller than the minimum spin- wave wavelength 2π/kmax (cid:39) 0.5 µm attainable with our single-wire antenna. This reveals the evanescent char- acter of the magnetization dynamics induced when the frequency falls into the effective gap, also evidenced in the micromagnetic simulation of Fig. 6(d). IV. CONCLUSION In the present work, a new concept of spin-wave diode is proposed, which makes use of the particular dynamic dipolar interactions in transversally magnetized media. The device is made from a thin film consisting of two exchange-coupled layers with different saturation mag- netization values. Our theoretical analysis reveals that, in such a film, chiral dipolar couplings develop, which re- sults in nonreciprocal hybridization between close-lying spin-wave branches. Using this phenomenon, we engi- neer carefully the dispersion of surface waves so as to reduce the group velocity of waves travelling in a par- ticular direction to a very low value (slow waves) while 1112131410.26LD (µm)f (GHz)(f)05101550-5y (m)15105050-5y (m)0510152050-5y (m)2015105050-5y (m)(a)(b)0510152020151050103104z (µm)Integrated BLS intensity (arb.unit)z (µm)(g)(h)(c)(d)z (m)z (m)(i)BLS intensity(arb. unit)1001000m0,x/max(m0,x)210.1(e)5 µm5 µmmaintaining a large value for those propagating the other way. A comprehensive experimental picture of the diode functioning is obtained by combining propagating spin- wave spectroscopy with Brillouin light scattering, in both reciprocal-space thermal mode and real-space imaging mode: The magnetization dynamics excited by a source of finite size take the form of genuinely propagating waves in the forward direction of the diode and reduce to evanescent waves in the reverse one. By design, our spin- wave diode is quite versatile as its operational frequency window can be adjusted by tuning the amplitude of the applied magnetic field and its forward and reverse direc- tions can be interchanged by switching the polarity of the field. Since our concept of spin-wave diode relies on fully built-in rather than transduction-related nonreciprocity, it could contribute decisively to the advance towards the all-magnon approach for computing [9]. As a concluding remark, we wish to point out that engineering of uni- directionally slow spin waves could also prove useful in more general situations where long interaction times are needed within a limited space, for instance, for promot- ing nonreciprocal nonlinear coupling in the channel of a magnonic transistor [47]. ACKNOWLEDGMENTS This work was funded by the French National through the Programme Research's Agency (ANR) d'Investissement d'Avenir under contract ANR-11- LABX-0058 NIE within the Investissement d'Avenir pro- gram ANR-10-IDEX-0002-02. The authors acknowledge the STnano cleanroom facility for technical support and the High Performance Computing center of the Univer- sity of Strasbourg for access to computing resources, part of which were funded by the EquipEx Equip@Meso project of Programme Investissements d'Avenir. M.Gr. and M.Ge. contributed equally to this work. Y.H. and D.S. performed the micromagnetic simulations. M.B. and D.L. developed the analytical model. M.H. grew the films. M.Gr. and D.L. fabricated the devices and carried out the inductive measurements. M.Ge. per- formed the BLS experiments. M.B., P.P. and Y.H. su- pervised the project. Y.H., M.Gr., M.Ge., M.B. and P.P. wrote the manuscript. All authors discussed the results. 10 Appendix In this appendix, we derive analytical expressions for the additional elements, which appear in the dynamical matrix for magnetostatic surface waves upon top-bottom disymmetrization of the magnetic film through blockwise variations of the saturation magnetization and exchange constant values (see Sec. II B). In the linearized Landau- Lifshitz equation (Eq. 1), the perturbation thus intro- duced is described by the term ¯¯Gk(x−x(cid:48)) a(x(cid:48)) [η(x(cid:48)) × y] dx(cid:48). (A.1) γµ0(cid:104)MS(cid:105) l/2 −l/2 Therefore, the corrections to be added to the ¯¯C matrix are four 2×2 blocks, each of which has the form (cid:18)−Azx nm −Azz nm Axz nm nm Axx (cid:19) ¯¯Anm = , (A.2) with l/2 l/2 dx Aij −l/2 −l/2 nm = dx(cid:48)Sn(x) Gij k (x − x(cid:48)) a(x(cid:48))Sm(x(cid:48)). (A.3) Here, indices n, m = 0, 1 refer to the uniform and anti- symmetric basis functions introduced in Sec. II B and the Gij k 's (i, j = x, z) are the four components of the tensorial magnetostatic Green's function, which read [30] k (s) = −k e−ks Gzz k (s) = −δ(s) − Gzz Gxx Gxz k (s) = Gzx 2 k (s) = −i sgn(ks) Gzz k (s) k (s), (A.4) k (s), Gzx k (s), and S1(x) are odd and Gxx with δ(s) the Dirac's function. Since the functions a(x), Gxz k (s), and S0(x) are even, half of these matrix elements are strictly nil: Aii n(cid:54)=m = 0. Moreover, from Eqs. A.3 and A.4, it is easy to see that one necessarily has Aij nn = Aji nn. Then, overall, only four independent quantities must be calculated: Axz nn = Ai(cid:54)=j k (s), Gzz 01 , and Azz 01. 11 , Axx 00 , Axz Let us start with Axz 00 and Axz 11 , which both involve Gxz k . According to Eqs. A.3 and A.4, Axz 00 writes Axz 00 = = i −l/2 βk 2l l/2 l/2 dx −l/2 l/2 dx(cid:48)S0(x) Gxz l/2 dx −l/2 −l/2 k (x − x(cid:48)) a(x(cid:48))S0(x(cid:48)) dx(cid:48)sgn[k(x − x(cid:48))]e−k(x−x(cid:48))sgn(x(cid:48)). After some long but straightforward algebra for dealing with the absolute value and sign functions, we obtain 00 = iP (cid:48) Axz 00 = i β kl [sinh(kl) − 2 sinh(kl/2)] . (A.5) (A.6) Similarly, for Axz 11 , we have l/2 Axz 11 = = i −l/2 βk l from which it comes l/2 dx −l/2 l/2 dx(cid:48)S1(x) Gxz (cid:16) πx k (x − x(cid:48)) a(x(cid:48))S1(x(cid:48)) (cid:17) l/2 dx sin −l/2 l −l/2 dx(cid:48)sgn[k(x − x(cid:48))]e−k(x−x(cid:48))sgn(x(cid:48)) sin 11 = iP (cid:48) Axz 11 = i 2βkl π2 + k2l2 π − kl e−kl/2(cid:17) (cid:16) . (cid:18) πx(cid:48) (cid:19) l , 11 (A.7) (A.8) As made explicite in Eq. A.4, the xx component of the tensorial Green's function is composed of two terms, a local term (δ function) corresponding to the usual, k-independent out-of-plane demagnetizing field and a nonlocal, k-dependent correction involving Gzz k . Accordingly, the matrix element Axx 01 may be decomposed as with and 01 =−I(cid:48) + Q(cid:48), Axx dx(cid:48)S0(x) δ(x − x(cid:48)) a(x(cid:48))S1(x(cid:48)) dx(cid:48) δ(x − x(cid:48)) sgn(x(cid:48)) sin (cid:18) πx(cid:48) (cid:19) l l/2 −l/2 dx l/2 −l/2 √ β 2 l I(cid:48) = = l/2 l/2 dx −l/2 −l/2 l/2 −l/2 βk√ 2 l Q(cid:48) = = l/2 −l/2 dx l/2 dx(cid:48)S0(x) Gzz l/2 dx −l/2 −l/2 As before, the double integrations in Eqs. A.10 and A.11 require only basic algebra and we obtain I(cid:48) = 2 √ 2β π and Q(cid:48) = k (x − x(cid:48)) a(x(cid:48))S1(x(cid:48)) . 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1902.08066	2	1902	2019-05-30T17:30:23	Near-Field Scanning Microwave Microscopy in the Single Photon Regime	[ "physics.app-ph", "cond-mat.mes-hall", "physics.optics" ]	The microwave properties of nano-scale structures are important in a wide variety of applications in quantum technology. Here we describe a low-power cryogenic near-field scanning microwave microscope (NSMM) which maintains nano-scale dielectric contrast down to the single microwave photon regime, up to $10^{9}$ times lower power than in typical NSMMs. We discuss the remaining challenges towards developing nano-scale NSMM for quantum coherent interaction with two-level systems as an enabling tool for the development of quantum technologies in the microwave regime.	physics.app-ph	physics	Near-Field Scanning Microwave Microscopy in the Single Photon Regime S. Geaney1,2†, D. Cox3, T. Honigl-Decrinis1, R. Shaikhaidarov2, S. E. Kubatkin4, T. Lindstrom1, A. V. Danilov4 and, S. E. de Graaf1‡ 1National Physical Laboratory, Hampton Road, Teddington, TW11 0LW, UK 2Royal Holloway, University of London, Egham, TW20 0EX, UK 3Advanced Technology Institute, The University of Surrey, Guildford, GU2 7XH, UK 4Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Goteborg, Sweden †[email protected] & ‡[email protected] The microwave properties of nano-scale structures are important in a wide variety of applications in quantum technology. Here we describe a low-power cryogenic near-field scanning microwave microscope (NSMM) which maintains nano-scale dielectric contrast down to the single microwave photon regime, up to 109 times lower power than in typical NSMMs. We discuss the remaining challenges towards developing nano-scale NSMM for quantum coherent interaction with two-level systems as an enabling tool for the development of quantum technologies in the microwave regime. May 31, 2019 INTRODUCTION Since the advent of scanning tunnelling microscopy (STM) [1] and atomic force microscopy (AFM) [2] a wide range of derived scanning probe microscopy (SPM) char- acterisation techniques have been developed, capable of nanoscale spatial mapping of a broad range of physical quantities (see e.g. [3] for a review). The rapid devel- opment of nanotechnology, materials and surface science underpinned by these techniques drives the demand for ever more versatile and non-invasive nanoscale analysis tools. In particular, for the rapidly growing field of quan- tum device technologies there is a need to develop sup- porting SPM techniques operating in the same regime as these devices themselves i.e. in the quantum coherent regime. However, the number of nanoscale characterisa- tion tools capable of quantum coherent interaction with samples are so far very limited [3 -- 7]. In particular, at microwave frequencies where photon energies are orders of magnitude smaller than for optical wavelengths this poses a tremendous challenge due to the lack of single photon detectors and strict requirement for millikelvin temperatures. However, tools operating in this regime are urgently needed to drive further developments in solid state quantum technologies. Near-field scanning microwave microscopy (NSMM) combines microwave characterisation with either STM [8] or AFM [9] using either a broadband [10] or resonant [11] probe. In the near-field mode the spatial resolution is limited by the size of the SPM tip which can be many orders of magnitude below the diffraction limit. Various implementations of NSMM has been used extensively in the classical regime to non-invasively obtain surface and subsurface information on semiconductor devices [12], de- fects in 2D materials [11], biological samples [13] and for investigating high-Tc superconductivity [14], to name a few applications (for an overview see e.g. [15]). Here we present the first NSMM that operates in the single microwave photon regime and at 30 mK. We show that our NSMM is capable of obtaining nano-scale dielec- tric information in this regime of ultra-low power. This is an important step towards developing the fu- ture tool kit for characterisation of solid state quantum circuits and truly non-invasive nanoscale microwave in- terrogation of quantum materials and devices. Operat- ing the NSMM in the quantum limit enables a range of applications when the microwave signals of the NSMM can coherently couple quantum two-level systems (TLS). This includes nanoscale quantum materials characteri- sation in the microwave domain, understanding the na- ture of individual microscopic two-level system defects in quantum devices [16, 17] (those responsible for qubit pa- rameter fluctuations [18 -- 20]), interrogation of engineered TLS (such as quantum dots and superconducting qubits), individually or in large-scale quantum circuits, probing valley physics in silicon, and probing the physics in quan- FIG. 1. (a) Diagram of the set-up of the NSMM microscope. A superconducting fractal resonator, with average photon oc- cupancy (cid:104)n(cid:105) ∼ 1, is adhered to a quartz tuning fork. A mov- able CPW is used to inductively couple to the resonator for excitation and readout. (b) Illustration of the NSMM sus- pended by springs and kevlar wire inside a dilution refrigera- tor. Feed-throughs at the 800 mK plate are designed to reduce the amount of thermal photons from hotter stages reaching the NSMM. tum metamaterials [21 -- 23]. We discuss the limitations of our NSMM and the current limitations towards enabling it for these applications. We not that this technique could also be used to study local field distributions [24], quasi- particle dynamics and loss [25] and noise [26 -- 28] mecha- nisms in e.g. superconductors and dielectrics in the ultra- low power regime. For coherent nanoscale measurements with NSMM there are four main requirements to satisfy: (i) The mi- croscope must operate at low temperatures to ensure that the thermal energy is much less than the probe frequency (and any TLS energy level splitting ETLS, of interest), kBT (cid:28) ETLS ∼ ωr, where ωr is the NSMM probe an- gular resonance frequency. For ωr/2π = 6 GHz this re- quires T (cid:28) 300 mK. (ii) The NSMM needs to operate at low microwave powers to be able to coherently couple to TLS and without saturating them [29]. The critical photon number for saturation in the dispersive regime is given by ηc = (ωr−ETLS/)2/4g2, where g is the coupling strength [30], which implies that the average number of photons in the resonator (cid:104)n(cid:105) (cid:28) ηc, must be close to one i.e. the NSMM should operate in the near single pho- ton regime. (iii) The resonator loss rate Q−1 should be smaller than the coupling strength g, requiring a high-Q resonator. (iv) Nanometer scale distance control between the tip and the sample surface is needed for a well defined coupling between the probe and a TLS, prompting the integration with AFM in a system that is well isolated from vibrations. Here we demonstrate the first NSMM making significant advances towards reaching all these stringent requirements while still maintaining the capa- bility of nanoscale dielectric imaging. i EXPERIMENT To achieve precise distance control between the tip and the sample and to enable scanning the tip across the sam- ple surface we use tuning-fork based AFM. This tech- nique is compatible with a cryogenic environment due to its low dissipation electrical readout [31]. The use of quartz tuning forks for AFM is a well established tech- nique [9, 32] which can be used to perform non-contact SPM on both conducting and dielectric surfaces. The tuning fork response is read out electrically using a ca- pacitance compensating circuit [33] and a low noise pre- amplifier. A phase-locked loop (PLL) in our SPM con- troller measures the tuning fork resonance frequency shift and provides the AFM feedback. The bare tuning fork has a resonance frequency of fr,TF = 32.7 kHz. The experimental set-up of the NSMM is shown in FIG. 1(a). To integrate microwave interrogation with the AFM we use a thin-film Nb microwave resonator (fr = ωr/2π ≈ 6 GHz) patterned onto a silicon sub- strate and micromachined into a small resonator that is adhered to a single prong of a tuning fork [17]. The res- 2 onator is designed to be small and compact so that it can fit onto the end of a tuning fork whilst maintain- ing the properties of a distributed resonator [34]. The resonator is terminated with the AFM tip placed at a microwave voltage anti-node. Typically we find fr,TF ∼ 29 -- 30 kHz with a Q-factor of ∼ 104 at 30 mK due to the added mass of the microwave resonator on one of the prongs. To make a well-defined tip we use xenon focused ion beam (FIB) etching from the backside of the resonator (to prevent damage to the resonator pat- terned on the front side) to mill the tip to the desired size. Milling with the Xe-FIB from the backside (non- metalised side) of the probe has no observed impact on the quality factor of the microwave resonator. The FIB step is required for high resolution and high sensitivity NSMM imaging, ensuring the NSMM tip is well defined and that the AFM and metallic NSMM tips are one and the same. The resonator is excited and read-out through a co-planar waveguide (CPW) made from a printed cir- cuit board (PCB) which inductively couples to the res- onator. The coupling strength (distance between res- onator and coupling PCB) can be tuned with the use of an Attocube ANPz30 piezo-stepper that is placed behind the CPW, allowing for optimisation of the coupling of the resonator. Coarse positioning of the probe above the sample is achieved with Attocube ANC150 piezo-steppers whereas fine-movements and scanning is done with a set of in-house built piezo-tube scanners with a scan range of 18 µm at 30 mK. The whole set-up is housed within custom casing and is suspended in a BlueFors LD-400 dilution refrigerator (See FIG. 1(b)) from three copper-beryllium (CuBe) springs and kevlar thread that feeds through from the 50 K plate to the mixing chamber plate. This aims to minimise the effects of external mechanical vibration by acting as a mechanical low-pass filter, in particular to reduce the vi- brations caused by the pulse tube operating at 1.4 Hz. The total suspended mass is 5 kg and with a combined spring constant of k = 295 N/m this results in a reso- nant frequency of the suspension of 1.2 Hz. This is cru- cial as vibrations will significantly impact the distance control and the performance of the coherent NSMM. At the 800 mK (still) plate we designed a feed-through for each kevlar thread to reduce the amount of thermal pho- tons reaching the NSMM, while maintaining the mechan- ical properties of the suspension. The suspension feed- through are thin hollow tubes with inner walls painted in stycast with a suspended baffle over the top that block a direct line-of-sight from the top to the bottom of the fridge. To measure the real-time frequency shift of the su- perconducting resonator with high-sensitivity we employ the Pound-Drever-Hall (PDH) technique. This method is commonly used in optics for laser frequency stabilisa- tion [35]. Here this method gives us the ability to accu- rately monitor the microwave resonance frequency while 3 FIG. 2. (a). The intrinsic quality factor of the resonator probe as a function of average photon number (cid:104)n(cid:105), for three different temperatures. The data (•) is fitted ( -- ) to Qi((cid:104)n(cid:105)) (see text). (b) The frequency shift of the resonator probe as a function of tip-to-sample distance. Inset: The frequency shift at small distances with a linear approximation. The gradient of 0.84 kHz/nm from this data is what we use to convert from frequency noise to tip-to-sample displacement noise. (c). The intrinsic (left axis) and coupling (right axis) quality factors as a function of the number of steps made by the coupling piezo-stepper (coupling distance). scanning the tip over the sample surface. Another advan- tage of the PDH loop is that it is immune to variations in the electrical length caused by thermal drift, moving parts and other noise processes, making it an ideal tech- nique for NSMM, as opposed to an interferometric tech- nique such as homodyne detection. In brief, the PDH method uses a carrier tone near the resonant frequency fc, that is phase modulated with a frequency fm. The side-bands at fc ± fm are far detuned from resonance and therefore do not interact with the resonator, while fc acquires a phase shift proportional to the detuning δf = fc − fr from the instantaneous resonance frequency fr. Passing this spectrum through the resonance and to a non-linear detector produces a beating signal at fm with an amplitude proportional to the detuning δf . A PID controller aims to null this beating signal, thus tracking the resonance frequency. A detailed discussion on the PDH technique can be found in Ref. [36]. The use of the PDH technique for NSMM was origi- nally outlined in [34]. Here we use the same general set- up but with significantly improved cryogenic microwave circuitry to facilitate measurements in the single photon regime. A lock-in amplifier provides the phase modula- tion reference signal at fm which is combined with the carrier in a phase modulator to produce the phase mod- ulated spectrum sent to the cryostat. The amplified and filtered output signal from the cryostat is measured with a diode detector and the detector output is lock-in de- modulated with fm as a reference. The lock-in output is fed to a PID controller which in turn controls the carrier frequency fc through the frequency modulation input of the microwave generator. RESULTS & DISCUSSION One of the requirements for coherent NSMM is to op- erate at low power to reach the single photon regime [17]. To evaluate the average photon number we measure the intrinsic quality factor Qi, of the resonator probe as a function of applied microwave power using a Vector Net- work Analyser (VNA). This data is shown in FIG. 2(a) for three different temperatures. For a resonator with impedance close to 50 Ω we get the corresponding av- erage photon number (cid:104)n(cid:105), for a given input power Pin, using the equation (cid:104)n(cid:105) = (cid:104)Eint(cid:105) ωr = 2 π Q2 Qc Pin ω2 r , (1) where Qc is the coupling quality factor and Q is the total quality factor. The data for Qi((cid:104)n(cid:105)) shown in FIG. 2(a) has been fitted to a power law dependence adapted from the standard tunnelling model that states i = F tan(δi)/(1 + (cid:104)n(cid:105)/nc)α + Q−1 Q−1 [37] where Q−1 i,0 accounts for losses that are independent of power, F is the filling factor of the TLS hosting medium in the res- onator, nc is a critical number of photons for satura- tion, tan(δi) is the loss tangent; the fit returns α = 0.07 and F tan(δi) = 1.8 × 10−5 at 30 mK, to our knowledge the highest NSMM Q reported. FIG. 2(a) shows that at lower photon numbers Qi saturates in the single photon regime at a power-independent value as expected for TLS related dissipation. i,0 Next, we investigate the resonator behaviour as it is moved in close proximity to the sample surface. In FIG. 2(b) we show measured data of the resonant fre- quency shift of the NSMM probe as a function of tip-to- sample distance. This shift is due to the changing ca- pacitance ∆C between the metallic probe tip and the sample. We fit the data using the equation ∆ωr = 100102104567805001000150005100510051005101520-0.6-0.4-0.200.20510-10-50LC, where L and C are the in- ductance and capacitance of the resonator respectively. We calculate ∆C by assuming the tip is a metallic sphere of radius R at a distance z above an infinite conducting plane [38] (cid:18) (cid:19) R z + ∆z 1/(cid:112)L(C + ∆C) − 1/ √ ∆C = 2πε0R ln 1 + . (2) We add an offset distance ∆z, to account for the fact that the data in FIG. 2(b) starts at an unknown dis- tance away from the surface. From this analysis we find the microwave tip radius R = 2 µm. To convert be- tween frequency and distance in NSMM scans, we mea- sure the shift in the resonant frequency as a function of tip-to-sample distance close to the sample surface (inset of FIG. 2(b)). We find a linearised frequency-to-distance conversion coefficient of 0.84 kHz/nm. We then measure the effect of adjusting the coupling distance between the resonator and the CPW. We do this find the optimal coupling to the resonator, which may vary between probe assemblies. FIG. 2(c) shows the change in Qi (left axis) and Qc (right axis) as the distance between the CPW and the resonator probe is changed. As expected, Qc increases with increased coupling dis- tance. The response in Qi follows from the change in (cid:104)n(cid:105) induced by the change in Qc: combining Eq. 1 with Qi((cid:104)n(cid:105)) we have in the limit Qi (cid:29) Qc that Qi ∝ Qc and in the limit Qi (cid:28) Qc that Qi ∝ Q for α = 0.07, in good agreement with the measured change in Qi. −α/(1−2α) c = Q−0.08 c Next, to determine the mechanical stability of the NSMM we measure the power spectral density (PSD) of the fluctuation in centre frequency of the resonator ∆fr for three different parameter combinations of tip- to-sample distance and average photon number, speci- fied in FIG. 3. There are peaks at 1.4 Hz and harmon- ics thereof due to the dilution refrigerator pulse tube on two of the PSD traces. In the high power regime ((cid:104)n(cid:105) ∼ 103) the frequency fluctuations of the microwave resonator are limited by the mechanical noise of the sys- tem, which translates to frequency noise through the fluc- tuations in tip-sample capacitance. When the NSMM probe is in contact with the sample, the peak amplitude Hz at 1.4 Hz corresponds to 1.8 nm. We of 1.5 kHz/ note that despite the relative simplicity of the suspen- sion inside our dry dilution refrigerator these noise levels are very much comparable to other similar state of the art scanning probe microscopes [39, 40]. Lifting the tip by 5 nm reduces the sensitivity of the resonator to mechani- cal noise, indicating that the mechanical noise limits the frequency read-out accuracy of the microwave resonator at high powers. However, in the single photon limit the noise level is much higher and the peaks due to the pulse tube are washed out. Here the dominating noise process at the time-scales shown in FIG. 3 is the white noise of the measurement set-up. The 1/f intrinsic noise level of √ 4 the resonator due to TLS defects [26] was independently found to be ∼ 380 Hz/ Hz (at f = 1 Hz) for (cid:104)n(cid:105) ∼ 1 and is comparable to the mechanical noise. √ Finally, we demonstrate scanning with nanoscale res- olution in the single photon regime, shown in FIG. 4. The scans are of the same area of a sample consisting of Al patterned on a Si substrate. The scan shows three metallic squares (2×2 µm2) placed adjacent to two larger structures that form an interdigitated capacitor. Each metal finger of the interdigitated capacitor has a width and separation of 1 µm, although in FIG. 4 these dis- tances appear different due to the shape of the tip. FIG. 4(a), shows the AFM topography, and the mi- crowave resonator response, taken in the single photon regime, is shown in FIG. 4(b). Remarkably, even at these ultra-low power levels, up to 109 times lower than in con- ventional NSMMs (reported power levels in the literature are down to about −20 dBm [9]), we can resolve a clear contrast in the NSMM image. A similar scan taken at higher powers ((cid:104)n(cid:105) ∼ 270) is shown in FIG. 4(c). As expected, the scan taken in the single photon regime is noisier than the equivalent high power scan, see signal- to-noise ratio (SNR) plot in FIG. 4(e). As the tip-to-sample distance is kept constant by the AFM feedback, the contrast shown in the microwave scans is therefore mainly due to changes in capacitance between the tip and the sample. The smaller metallic squares in the scan are brighter than the larger metallic structures since a smaller structure has a weaker capaci- tive coupling to ground compared to larger ones. This is further supported by FIG. 4(d) that shows the response of the resonator at (cid:104)n(cid:105) ∼ 270, demodulated at the tuning fork frequency of 30 kHz. The contrast origi- FIG. 3. PSD of the microwave frequency shift ∆fr, from the superconducting resonator. The peak at 1.4 Hz is the pulse tube. Red line: When the tip is in contact at low power ((cid:104)n(cid:105) ∼ 1). Purple line: When the tip is in contact at high power. Blue line: When the tip is retracted 5 nm from the surface at high power. The kink in the data from ∼ 101 Hz is the roll-off of the PID bandwidth in the PDH loop. 5 FIG. 4. Scans of an interdigitated capacitor with adjacent metallic pads taken at 30 mK. (a) AFM Topography scan. (b) Single photon regime microwave scan ((cid:104)n(cid:105) ∼ 1) showing the frequency shift of the microwave resonator. The images were acquired using a scan speed of 0.67 µm/s. (c) Microwave scan at high power ((cid:104)n(cid:105) ∼ 270). (d) The PDH error signal demodulated at the tuning fork frequency (30 kHz), proportional to dfr/dz ((cid:104)n(cid:105) ∼ 270). (e) The signal-to-noise ratio (SNR) obtained from scans as a function of the average photon number (cid:104)n(cid:105). nates from the change in microwave resonance frequency as the tip oscillates at the tuning-fork frequency in close proximity to the sample surface. The same scan was done at (cid:104)n(cid:105) ∼ 1 but found to have a SNR less than 1. The de- modulated signal is the PDH loop 'error' signal which is not tracked by the PID (which only has a bandwidth up to ∼10 kHz). For variations smaller than the resonance linewidth the 'error' signal becomes directly proportional to the linearised phase response around fr and thus the demodulated signal is proportional to dfr/dz. FIG. 4(d) highlights the contrast formation mecha- nism in FIG. 4(b) and FIG. 4(c) originating from the capacitive network formed between tip, sample features and ground plane which is on the backside of the silicon substrate. The reduced contrast for the smaller metallic squares implies that the size of the tip and its own capaci- tance to ground dominates the total capacitance, whereas the larger metallic structures have a much larger self- capacitance, resulting in the response being dominated by the smaller time-dependent tip-sample capacitance. This cross-over occuring at length-scales of ∼ 1 µm is in good agreement with the size of the near-field tip esti- mated from the approach curve in FIG. 2(b). Microwave scans like the ones shown in FIG. 4 were performed at several different average photon numbers. From these we calculated a signal-to-noise ratio (SNR) as a function of the average photon number, shown in FIG. 4(d). The difference between the average response on a metallic area and on an area of dielectric substrate is used to evaluate the signal. We divide this signal by the noise, estimated as the root mean square variation over the same areas. As expected, the SNR is lower for scans close to the single photon limit than for higher power scans. This is in agreement with the previous conclusion that, except for the scans taken at very low average pho- ton numbers, the noise is dominated by mechanical noise which is independent of the applied microwave power. In the single photon regime we would expect to be capable of coupling to coherent quantum devices in the microwave domain [17]. For example, even on the sur- face of naturally oxidised Al one would expect to observe ∼ 1 TLS defect per µm3 within a 100 kHz bandwidth around the resonance frequency [20, 41]. Currently our NSMM requires some further improvements to be able to coherently detect TLS. As stated before, mechanical stability is currently not a limiting factor in the single photon regime. The main limiting factor is instead re- vealed in the temperature dependence of the single pho- ton Q-factor (FIG. 2(a)). (This was separately confirmed through the temperature dependence of the resonance frequency (data not shown)). The change in Qi(T ) is much smaller than expected indicating that the TLS de- fect bath and the resonator are not entirely thermalised. From the thermal saturation of two-level system defects in the resonator we expect Qi(T ) ∝ tanh(ω/kBT ) [42]. For our measured temperature range this translates into the ratio Qi(T = 30 mK)/Qi(T = 650 mK) ∼ 4.5. How- ever, we observe a ratio of ∼ 1.5, indicating that the TLS bath is much warmer than the mixing chamber temper- ature. This was confirmed in a well-shielded separate cool-down of the same probe, which showed the expected temperature dependence. Additional engineering of the NSMM enclosure, suspension feed-throughs, and thermal anchoring is needed to ensure increased thermalisation. CONCLUSIONS We have designed and evaluated a resonant near-field microwave microscope operating at 6 GHz and 30 mK. The microscope for the first time demonstrates nano- scale dielectric contrast in the single microwave photon regime. Our results shows promise for the development of microwave SPM instrumentation capable of coher- ently interacting with quantum systems. We discussed the main engineering challenges to our current set-up in achieving this significant milestone. A milestone that would enable an entirely new tool to characterise and drive the development of quantum devices and technolo- gies in the microwave domain. ACKNOWLEDGEMENTS We thank A. Ya. Tzalenchuk for careful reading of the manuscript as well as P. J. Meeson and J. Burnett for their helpful discussions during this work. 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1906.02543	1	1906	2019-06-06T12:17:28	Organic Light-Emitting Diode Beam Shaping: Pixel Design for Variable Angular Emission Profile Control	[ "physics.app-ph" ]	Organic light-emitting diodes (OLEDs) are the leading self-emitting pixel technology in current and future small and large area displays. Once integrated with a certain layer architecture into the backplane layout, their emission colour and angular distribution is set by the optical properties of the layered system. In this paper, we demonstrate a pixel design that allows for actively controlled variation of the angular emission profile of the individual vertical pixel. For this, a tandem device is developed that comprises two units optimized for different angular emission pattern. We constrained the system to operate in a narrow emission band to maintain monochromaticity of the individual pixel. We discuss this concept for a red phosphorescence-based OLED stack and give an outlook based on simulations for the other primary display colours green and blue. The tandem unit can be operated with only two electrodes making use of the AC/DC driving concept, where the outer electrodes are in direct connection. In this paper, we will discuss the potential, status, and technology challenges for this concept.	physics.app-ph	physics	Organic Light-Emitting Diode Beam Shaping: Pixel Design for Variable Angular Emission Profile Control Felix Fries, Markus Fröbel, Pen Yiao Ang, Simone Lenk, and Sebastian Reineke* *Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP), Technische Universität Dresden, 01187 Dresden, Germany Abstract Organic light-emitting diodes (OLEDs) are the leading self- emitting pixel technology in current and future small and large area displays. Once integrated with a certain layer architecture into the backplane layout, their emission colour and angular distribution is set by the optical properties of the layered system. In this paper, we demonstrate a pixel design that allows for actively controlled variation of the angular emission profile of the individual vertical pixel. For this, a tandem device is developed that comprises two units optimized for different angular emission pattern. We constrained the system to operate in a narrow emission band to maintain monochromaticity of the individual pixel. We discuss this concept for a red phosphorescence-based OLED stack and give an outlook based on simulations for the other primary display colours green and blue. The tandem unit can be operated with only two electrodes making use of the AC/DC driving concept, where the outer electrodes are in direct connection. In this paper, we will discuss the potential, status, and technology challenges for this concept. Author Keywords Organic light-emitting diode, beam-shaping, tuneable light source, stacked OLED. Introduction 1. Nowadays, organic light-emitting diodes (OLEDs) can be found in various fields of lighting applications, be it illumination, large area displays like televisions or even in micro displays. The inherent properties of OLEDs make them the unique possibility for many purposes. Devices are able to provide features like ultra- thin and flexible design, transparency, and spectrally broad white- light emission with a high colour-rendering index. Very often the emission intensity of such light sources follows a Lambertian like behaviour, which refers to a cosine-like drop of intensity with increasing viewing angle. However, this doesn't meet many application needs, which is why it often gets reshaped using secondary optical elements. The use of so-called beam-shaping methods spreads over many fields from laser physics, LED illumination, to rear lights of cars. Within the OLED community, however, broad beam-shaping concepts have been missing for long. Some ideas were presented in the past, using either microlens-arrays [1], diffractive gratings [2], or abandoning the planar geometry of the light source [3]. Especially the first two approaches don't make any use of the fundamental attributes of OLEDs, and thus will always be in strong competition with other light sources like LEDs. More important still, they all loose the great advantages of OLED light sources as mentioned at the beginning of this section. Having applications like micro displays in mind, particularly bulky beam-shaping structures should be avoided. Only recently we presented an active beam-shaping method, which can exclusively be applied to OLEDs, using their inherent properties, and hence adding nicely to their long list of advantages over alternative light-sources [4]. At that time, we showed a proof-of-concept, discussed upcoming challenges and geometrical influences of such a concept. Importantly, we focused our work mainly on red OLEDs. Here, we transfer this promising concept to other primary colours. Especially when talking about display applications, all three colours of the CIE tristimulus need to be realised. Therefore, we first want to revise the most important theoretical features which are key for understanding. On the basis of experimental data of a green beam-shaping device, we discuss in the second part effects, which are not that prominent in red devices. Subsequent simulations, however, prove that those issues can be addressed choosing adequate emitter materials. In the language of device design, a blue emission colour can be seen as the extrapolation of the change from red to green and will be considered only briefly at the end of this text. 2. Theoretical Basics and Device Architecture In Fig. 1 the device architecture is shown. The basic structure is shown on the right hand side and represents an AC/DC OLED [4, 5]. Figure 1: Left hand side: Each side unit is made up of a pin-OLED, comprising hole-transporting, electron-blocking, emission, hole-blocking, and electron intermediate electrode is an ultra-thin wetting layer electrode. Right hand side: Two units are stacked on each other to build an AC/DC device. layers. The transporting This concept is characterised by two independent subunits (OLED 1 and OLED 2) which are stacked on top of each other. As the top electrode is connected to the bottom electrode, they remain as a common electrical counter pole to the transparent middle electrode. The latter is made of a thin gold wetting layer and a subsequent silver layer [6]. Depending on the polarity of the applied voltage only one of the subunits is in forward bias and thus, emitting light. Besides easy switching between the two devices, mixed emission can be achieved when applying an alternating voltage, providing a frequency higher than humans' perception. The flicker-fusion frequency can be assumed to be around 60 Hz [7]. Despite the fact that our samples were driven at 50 Hz, which corresponds to the main frequency in central Europe, we could not detect any flickering in the emission of the devices. Using pulse-width modulation, simple and continuous tuning between the pure emissions of each subunit is easily possible. This basic working principle is completely independent Figure 2: The experimentally measured normalized spectral radiant intensity of the two subunits of a green beam- shaping OLED. The subunit OLED 1 shows mainly forward emission, whereas OLED 2 has a clear intensity maximum at 56°. The spectra were individually normalized to their maximum intensity. of the main emission direction of the final sample. It can either be bottom emitting, in which case electrode 1 would be indium tin oxide (ITO) and the emission happens through the glass substrate, or top emitting with the electrode 1 being a transparent Au/Ag layer with an additional organic capping layer for increased out- coupling of the light [8]. In the latter case, electrode 3 is directly located on the glass substrate. It is important to note that all our experiments and simulations show that independent of the emission direction, the sideward emitting unit should always be the one close to the thick opaque electrode 3. As hinted on the left hand side of Fig. 1, each of the two subunits is made up of a pin- OLED, referring to the electrical properties of the respective layers: a p-doped hole conducting layer, an n-doped electron conducting layer, and non-doped intrinsic layers for charge carrier confinement and light emission. The latter is also referred to as EML (emission layer). The material of choice depends on various parameter and will be discussed later in this work. The pin-layout is one of the key attributes to realize active beam- shaping, as layers comprise both very high transparency and conductivity. Hence, varying their thickness can be used for flexible adjustments of the resonances in the micro- cavity [9]. the doped As shown in our previous work, the angular distribution of the emitted intensity depends strongly on the influence of the micro- cavity of the device, which are mainly the three following points: First, the overall thickness of the layers between the framing electrodes of the respective subunit determines the peak resonance wavelength. Second, the position of the EML within the cavity and its interaction with the electric field within the device influences both the efficiency and the angular behaviour of the emission. Third, following a Fabry-Pérot resonator behaviour, thicker electrodes lead to a spectrally more confined emission [4, 10]. Those influences can be summarized as the cavity mode (CM). By multiplication with the electroluminescence (EL) spectrum of the emitter, the shape of the totally out-coupled spectral radiant intensity (SRI) is obtained. The EL spectrum is normally assumed to resemble the photoluminescence (PL) spectrum, which is experimentally accessible. In total this gives the very simplified version of the SRI 𝐼(𝜆, 𝜃), as given by Furno et al. [9]: 𝐼(𝜆, 𝜃) ∼ 𝑠EL(𝜆) ⋅ 𝐶𝑀(𝜆, 𝜃) Having this in mind, the strategy for the design of a beam-shaping OLED is optimizing the interplay of the CM with the emitter emission profile. 3. Experimental Findings In our previous work, we demonstrate that due to the bending of the cavity modes towards shorter wavelengths with higher viewing angles, it is useful to use two different emitter materials in the subunits. OLED 1 which is the side emitting one, tends to be blue shifted compared to the emitter's peak PL intensity. To counteract to this effect an emitter is chosen for this subunit, which provides a red shifted PL spectrum as compared to the emitter in OLED 2. Experimental tests were done with the two well-known green emitters Ir(ppy)2(acac) and Ir(ppy)3. The shape of their PL spectra resemble each other quite well, whereas the peak wavelength is 523 nm and 507 nm, respectively. For detailed information on the materials please refer to the Materials and Methods section. The whole stack is built in top-emitting architecture, as here the cavity-mode is expected to be more confined and thus leads to a stronger side-emission. The resulting SRI of each of the subunit is presented in Fig. 2. As expected, OLED 1 emits mainly into forward direction, which refers to low viewing angles. Its maximum is at 0° and 545 nm dropping to half intensity around 45°. On the other hand, OLED 2 shows its maximum of intensity at 56° and 516 nm. The two branches of the SRI at 0° arise from two contributions of the cavity mode. Integration of the SRI over the wavelength prove that the maximum intensity for OLED 2 is not at 0°, and thus results to be side emitting. Even the projection of this radial symmetrical measurements onto a planar surface (see photo in Fig. 3a)) shows an intensity distribution with a maximum at angles larger than 0°. However, one big upcoming challenge becomes clear at this stage: as the contributions of different colours/wavelength vary differently as a function of the angle, a strong colour shift from the centre of the light spot towards the edges is visible. The brightness in each pixel is proportional to the grayvalue, which is the sum of the contributions of each primary colours (R, G, B). Figure 3b) shows the distribution of each colour channel and of the normalized grayvalue for a cross-section of the photo above. Even though the total brightness peaks around +/- 30°, the three colours differ in their behaviour. As the red channels peaks closer to 0°, than the green one, the conceived colour changes from reddish over strongly yellow to green. Of course, this is inacceptable for possible applications. A photo of the forward emission is not shown here, but as expected from the spectrum (Fig. 2), the intensity shows a point like behaviour with quite stable colour distribution. flat screen is show in Figure 4. The shown angular range is +/- 70° viewing angle. Two points are notable here. First, the two emission colours resemble each other quite well. Second, the colour drift in side emission could be reduced drastically, compared to the devices shown in the section before. Still there is a slight change from the centre to the maximum of intensity, but it is way less pronounced. This simulation proves that narrow band emitter, which are already present in the community and for sure can expect further evaluation, can overcome the challenges which occur when transferring our beam-shaping concept to non-red devices. 5. Discussion In this paper we took up the topic of active beam-shaping, we only presented recently for red OLEDs. It was shown that moving onto other emission colours like green, issues appear, which were not decisive before. Having a red emitter embedded in the device, dark red contributions are barely perceived by the human eye. Aiming for colours in the blue or green wavelength regime, long wavelength contributions, however, are easily visible. In the present case the green side emission was superimposed by a yellow central spot, which arises by red contributions in the Figure 3: a) A photo taken of an illuminated screen shows a strong colour drift from a central yellow to green towards the edges. b) Even though the total emission shows maximum intensity at a non-zero viewing angle (black line), a separation into the primary colours shows their different angular behavior. 4. Simulation with Alternate Emitter Material As this device is built in top-emission design, a quite strong cavity effect is already present in the sample. This means, to overcome the observed colour-shift, the best remaining possibility is to include emitting materials providing spectrally more narrow PL- spectra, as they are for example presented by G. Li et al. [11]. As those emitter materials were not at hand, we performed simulations assuming its emitting properties at this stage. The PL spectrum of the emitter PtN1N is shown in the inlet of Figure 4. It peaks around 500 nm and has a very narrow peak shape. This emitter was used in the side emitting OLED 2. As no anisotropy value is given in the publication, we assumed isotropic orientation (orientation factor a=0.33). As the forward emission is less critical, remains Ir(ppy)2(acac). the emitter was not exchanged and To make the results more comparable to the red beam-shaping OLEDs we've shown in our earlier work, and as it is the more common geometry, the following samples were simulated in bottom-emission architecture. Except for the emitting molecule, the used materials are unchanged to the stack shown above. The thickness of each transport layer was adjusted to obtain best spectra. The resulting emission as simulated when illuminating a Figure 4: The simulated emission pattern using a narrow band emitter as can be found in the literature [10] (the PL spectrum is shown in the inset), allows for quite colour stable beam- shaping OLEDs. spectrum at low viewing angles. Nevertheless, subsequent simulations show that narrow emission band emitter are able to reduce the parasitic contributions in the spectrum. Hence, the perceived image on a flat screen shows drastically reduced colour drift. Both the forward emission and the side emission shows nearly exactly the same green colour. The last missing piece towards white beam-shaping devices is a blue stack. However, we are confident, that the transfer from green to blue bares no more scientific difficulties. Still, from the production point of view the shorter the emission wavelength, the more precise the absolute thickness of each layer has to be realized. Regarding display applications, not only the existence of all three primary colours is essential, but also the arrangement within the display's pixel. As one beam-shaping device already consists of two stacked units, which are having a cross correlation of their cavity modes, stacking three various beam-shaping devices would result in six stratified OLEDs. It is hard to see a way to realize this in a stable, reproducible, and cost-effective way. However, in small displays like smart-phone applications, the state of the art colour-mixing is achieved be placing the primary colours in different subpixels side by side. From the device point of view there is no reason why this should not be possible with beam- shaping devices. Having this in mind we are confident that the concept of active beam-shaping has high potential to be realised in future display applications. 6. Materials and Methods The presented OLEDs were fabricated in a UHV chamber at a pressure around 10⁻⁶ to 10⁻⁷ mbar. The evaporation rates varied between 0.2 and 2 Å/s. Protection against water, oxygen and mechanical stress was achieved to glass encapsulation. through glass The materials used are: N,N'-Di(naphthalen-1-yl)-N,N'-diphenyl- benzidine (NPB), silver (Ag), gold (Au), aluminium (Al), 4,7- diphenyl-1,10-phenanthroline (Bphen), caesium (Cs), 2,2',2''- (TPBi), (1,3,5-phenylen)tris(1-phenyl-1H-benzimida-zol) 4,4',4''-tris-(N-carbazolyl)triphenylamine Bis(2- phenylpyridine)iridium(III)acetylacetonate (Ir(ppy)2(acac)), Tris(2-phenylpyridine)iridium(III) (Ir(ppy)3), 2,2',7,7'-tetrakis- (N,N-diphenyl-amino)-9,9'-spirobifluorene (Spiro-TAD), 2,2',7,7'-Tetrakis-(N,N-dimethylphenylamino)-9,9'- spirobifluoren diylidene)di-malononitrile (F6-TCNNQ). (Spiro-TTB), 2,2'-(perfluoronaphthalene-2,6- (TCTA), The green top OLED follows the structure (from bottom to top, values in bracket refer to the thickness): glass-substrate / Al (40 nm) / Ag (40 nm) / Spiro-TTB doped with 4wt% of F6-TCNNQ (105 nm) / Spiro-TAD (10 nm) / TCTA doped with 8wt% of Ir(ppy)3 (8 nm) / TPBi doped with 8wt% of Ir(ppy)3 (12 nm) / Bphen (10 nm) / Bphen doped with Cs (130 nm) [the doping is determined by a conductivity test to achieve a conductivity of 10⁻⁵ S/cm] / Au (2 nm) / Ag (7 nm) / Spiro-TTB doped with 4wt% of F6-TCNNQ (40 nm) / Spiro-TAD (10 nm) / TCTA doped with 8wt% of Ir(ppy)2(acac) (8 nm) / TPBi doped with 8wt% of Ir(ppy)2(acac) (12 nm) / Bphen (10 nm) / Bphen doped with Cs (210 nm) / Au (2 nm) / Ag (7 nm) / NPB (60 nm). The simulated bottom OLEDs show a very similar structure (again from bottom to top): glass-substrate / ITO (90 nm) / Spiro-TTB doped with 4wt% of F6-TCNNQ (50 nm) / Spiro- TAD (10 nm) / TCTA doped with 8wt% of Ir(ppy)3 (8 nm) / TPBi doped with 8wt% of Ir(ppy)3 (12 nm) / Bphen (10 nm) / Bphen doped with Cs (170 nm) / Au (2 nm) / Ag (12 nm) / Spiro- TTB doped with 4wt% of F6-TCNNQ (30 nm) / Spiro-TAD (10 nm) / TCTA doped with PtN1N (8 nm) / TPBi doped with PtN1N (12 nm) / Bphen (10 nm) / Bphen doped with Cs (250 nm) / Al (100 nm). Spectral measurements were carried out in an in-house built spectro-goniometer sporting an USB-spectrometer (USB4000, Ocean Optics Inc.), pictures were taken using a Canon EOS D30 camera. 7. Acknowledgements This project has received funding from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme (grant agreement No 679213). 8. References [1] Melpignano, P. et al. Efficient light extraction and beam shaping from flexible, optically integrated organic light- emitting diodes Appl. Phys. Lett. 88, 153514 (2006). [2] Zhang, S., Turnbull, G. A. & Samuel, I. D. W. Highly Directional Emission and Beam Steering from Organic Light-Emitting Diodes with a Substrate Diffractive Optical Element Adv. Opt. Mater. 2, 343-347 (2014). [3] Lee, J., Slootsky, M., Lee, K., Zhang, Y. & Forrest, S. R. An electrophosphorescent organic light emitting concentrator Light Sci. Appl. 3, e181 (2014). [4] Fries, F., Fröbel, M., Yang, P. Y., Lenk, S. & Reineke, S. Real-time beam-shaping without additional optical elements, accepted at Light Sci. Appl., preprint at arXiv:1703.02266 (2017). [5] Fröbel, M. et al. Color on Demand -- Color-Tunable OLEDs for Lighting and Displays SID Int. Symp. Dig. Tec. 48, 2168-0159 (2017). [6] Schubert, S., Meiss, J., Müller-Meskamp, L. & Leo, K. Improvement of Transparent Metal Top Electrodes for Organic Solar Cells by Introducing a High Surface Energy Seed Layer Adv. Energy Mat. 3, 438-443 (2013). [7] Hoffman, D. M., Karasev, V. I., Banks, M. S. Temporal presentation protocols in stereoscopic displays: Flicker visibility, perceived motion, and perceived depth J. Soc. Inf. Display 19, 3 (2011). [8] Lee, J. et al. Influence of organic capping layers on the performance of transparent organic light-emitting diodes Opt. Lett. 36, 8 (2011). [9] Furno, M., Meerheim, R., Hofmann, S., Lüssem, B., Leo K. Efficiency and rate of spontaneous emission in organic electroluminescent devices Phys. Rev. B, 85, 115205 (2012). [10] Becker, H., Burns, S. E., Tessler, N. & Friend, R. H. Role of optical properties of metallic mirrors in microcavity structures J. Appl. Phys. 81, 2825 (1997). [11] Li, G., Fleetham, T., Turner, E., Hang, X.-C., & Li, J. Highly Efficient and Stable Narrow-Band Phosphorescent Emitters for OLED Applications Adv. Opt. 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1811.08344	4	1811	2019-01-15T20:49:02	Towards integrated metatronics: a holistic approach on precise optical and electrical properties of Indium Tin Oxide	[ "physics.app-ph" ]	The class of transparent conductive oxides includes the material indium tin oxide (ITO) and has become a widely used material of modern every-day life such as in touch screens of smart phones and watches, but also used as an optically transparent low electrically-resistive contract in the photovoltaics industry. More recently ITO has shown epsilon-near-zero (ENZ) behavior in the telecommunication frequency band enabling both strong index modulation and other optically-exotic applications such as metatronics. However the ability to precisely obtain targeted electrical and optical material properties in ITO is still challenging due to complex intrinsic effects in ITO and as such no integrated metatronic platform has been demonstrated to-date. Here we deliver an extensive and accurate description process parameters of RF-sputtering, showing a holistic control of the quality of ITO thin films in the visible and particularly near-infrared spectral region. We further are able to custom-engineer the ENZ point across the telecommunication band by explicitly controlling the sputtering process conditions. Exploiting this control we design a functional sub-wavelength-scale filter based on lumped circuit-elements, towards the realization of integrated metatronic devices and circuits.	physics.app-ph	physics	Towards integrated metatronics: a holistic approach on precise optical and electrical properties of Indium Tin Oxide Yaliang Gui1, Mario Miscuglio1, Zhizhen Ma1, Mohammad T. Tahersima1, Shuai Sun1, Rubab Amin1, Hamed Dalir2, and Volker J. Sorger1,* 1Department of Electrical and Computer Engineering, George Washington University, Washington, DC 20052, USA 2Omega Optics, Inc. 8500 Shoal Creek Blvd., Bldg. 4, Suite 200, Austin, Texas 78757, USA *[email protected] ABSTRACT The class of transparent conductive oxides includes the material indium tin oxide (ITO) and has become a widely used material of modern every-day life such as in touch screens of smart phones and watches, but also used as an optically transparent low electrically-resistive contract in the photovoltaics industry. More recently ITO has shown epsilon-near-zero (ENZ) behavior in the telecommunication frequency band enabling both strong index modulation and other optically-exotic applications such as metatronics. However the ability to precisely obtain targeted electrical and optical material properties in ITO is still challenging due to complex intrinsic effects in ITO and as such no integrated metatronic platform has been demonstrated to-date. Here we deliver an extensive and accurate description process parameters of RF-sputtering, showing a holistic control of the quality of ITO thin films in the visible and particularly near-infrared spectral region. We further are able to custom-engineer the ENZ point across the telecommunication band by explicitly controlling the sputtering process conditions. Exploiting this control we design a functional sub-wavelength-scale filter based on lumped circuit-elements, towards the realization of integrated metatronic devices and circuits. Introduction Indium Tin Oxide films have been extensively employed for diverse applications in the fields of optics and electronics in both research and industry [1]. Multiple uses of ITO ranges from photovoltaics [2 -- 5] to conductive displays [6], integrated photonics [7, 8] and solid-state [9]. ITO's versatility can be attributed to its concurrent optical transparency (T) and sheet resistance (Rsheet) (Figure of merit = T/ Rsheet)[10], as well as compatibility with the established technology [11]. Moreover, ITO's carrier density can be electrostatically tuned similarly to metal-oxide- semiconductor (MOS) capacitors, simply by applying a bias voltage. This carrier modulation translates into either a refractive index or absorption change [12]. For this reason, ITO has been largely employed as an active material in electro-optics modulator [13 -- 20] in integrated photonics devices and plasmonic metasurfaces [21 -- 24], specifically displaying high performance optical electro-refractive modulation [25]. In this regard, recently, new possibilities are emerging to use ITO as an active material in sub-wavelength waveguide integrated electro-optics modulators, which showed high performances regarding extinction ratio dB/µm [7, 26 -- 28]. Nevertheless, according to the application, the fundamental challenge in processing ITO is concurrently obtaining thin films with favorable electrical and optical conditions. For instance, in order to design efficient, transparent conductors for photovoltaic and conductive display applications, relatively low resistivity and optical transparency have to be achieved. For electro-optics application, the wavelength of the epsilon-near-zero (ENZ), the carrier concentration and absorption losses, which define the modulation strength, need to be accounted. Moreover, ITO films could enable an ENZ circuit board and nanoscale structured ITO RCL-equivalent circuit elements, thus creating a viable means to realize metatronic circuits [29]. Recently [30], ITO films have exhibited an extremely large ultrafast third-order nonlinearity at ENZ wavelengths, which could be exploited in nonlinear nano-optics application. Therefore, control over ENZ wavelength could constitute a fundamental building block towards the realization of metatronic devices [31] as well as nonlinear optical components. However, ITO's material parameters such as resistivity and permittivity are complex depending on a multitude of process conditions. For this reason, obtaining a thorough understanding of the effects of specific process parameters to the electro-optical properties of the ITO films is highly desirable and still represents an open challenge. Recently system parameters on different deposition techniques such as PEMOCVD [32], IBAD [33] and DC sputtering [34, 35] have been developed in an ad-hoc manner, however a significantly cross-validation process for the RF sputtering process and subsequent thermal treatment is still lacking. While previous work investigated selected material properties, a holistic understanding of a) the inter relationship among these material parameters and b) the precise process control thereof is far from being completely understood. In addition a viable path to realize metatronic circuits offering the best of both photonic signal communication and nanoscale component density is yet outstanding. Here we show the holistic control of the quality of ITO thin films in the visible and particularly near-infrared spectral region. We alter key material-film property factors during a RF-sputtering processing parameters such as the oxygen concentration and thermal annealing. Using this approach, we thence develop an interdependently-complete set of metrology processes for determining the conductivity, carrier density, and mobility of these ITO films and bring them in congruence with values obtained from spectroscopic ellipsometry. We discover a cross-sectional film thickness-dependent carrier distribution as a function of thermal carrier activation, and demonstrate ability to tune the resistivity gradient by restoring the film crystalline structure upon thermal treatment. We further demonstrate the precise control over ENZ film properties across the telecommunication band, which enables engineering a variety of optoelectronic devices with exotic properties. Using this process control in ITO, we analyze a functional sub-wavelength-scale filter based on lumped circuit-elements in a metatronic approach. Such self-consistent process and precise control of ITO's properties electrical, spectral, and optical parameters serves a wide application space such as in optoelectronics, metamaterials, metatronics, quantum technologies, energy-harvesting, and sensing. Figure 1. Flow chart of the ITO film process and holistic characterization. Different films are sputtered at different Oxygen flow- rate conditions (0, 5, 10, 20, 30 sccm). Post annealing process in a sealed chamber in inert atmosphere (H2 and N2). Thickness is directly measured through profilometer. Validation of the electro-optical properties of ITO films through complimentary set-ups which includes Hall, 4-Probe and Transmission line measurements. The black arrows illustrate the cross-validation mechanisms opted in this study. ITO deposition and characterization: Validation process We initially focus on defining a consistent and tunable ITO deposition process using RF sputtering, which allow to finely adjust the electrical and optical properties of the film. The purpose of our study is ultimately to engineer ITO film properties in order to deliver well-defined control over critical parameters for obtaining films that could enhance fabricated device properties. In our experiments, films are deposited on 1x1 cm2 Si/SiO2 substrates, utilizing reactive RF sputtering (Denton Vacuum Discovery 550 Sputtering System). ITO sputtering targets consist of 10% SnO2 to 90% In2O3 by weight (refer to the method section for details). Several replicated samples are produced for each oxygen flow-rate condition (0, 5, 10, 20, 30 sccm) and sputtering time (500,1000,1500,2000 s), for 40 sccm Argon flow-rate (50 sccm Ar flow rate study is presented in SI). For each condition, represented by a single data-point, the study is repeated four times for statistical purpose and repeatability. Conducive to promote crystallinity and study the charge carrier activation mechanisms, a sub-group of deposited films is subjected to a thermal treatment at 350oC in the inert atmosphere (a mixture of H2 and N2) for 15 minutes. Contrary to atmosphere annealing treatment [46], which aims to promote optical transmittance by filling vacancies, an annealing treatment in inert conditions improves both the film conductivity [47,48]. Differently from other studies [32-35], hereby we map the overall conductivity and optical absorption variation for different oxygen flow rates and deposition time. After deposition, the step height of ITO films is measured in multiple areas for estimating the uniformity of the deposition and determining the initial fitting parameters in our spectroscopic ellipsometry. For assessing the quality of our process and determining its reliability, direct and indirect measurements are used as rigorous cross validation tools. The resistivity of the thin film is indirectly obtained via ellipsomety and, directly, through 4-probe station (Four Dimensions 280DI) and Hall effect measurement system (HMS-5500). Hall measurement also gives information on the carrier type (n-doped) and concentration as well as the mobility. A straightforward Drude model, as well as the material model provided by Genosc library, is reductive and inaccurate, leaving aside a complete optical description of the film in the wide spectral window considered, under these process conditions. Relating to this, we use a fitting sequence which comprehends Cauchy, B-spline, Drude and Lorentz models, [36] allowing inter alia, an accurate description of the electrooptical features of the film as function of its depth (see supplementary information). This rigorous model for fitting the optical spectra enables the description of the refractive index and optical conductivity, as well as mobility and carrier concentration, which is cross validated by hall bar and 4-probe direct in-situ measurements (Fig. 1). The epsilon near-zero position is evaluated from the complex permittivity by ellipsometry. Figure 2. Oxygen flow-rate and post deposition heating treatment effects: ITO film Thickness as function of the Oxygen flow-rate (0,5,10,20,30) for different deposition time (500s, 1000s, 1500s, 2000s). Image of the 1x1 cm2 ITO films on SiO2/Si substrate for different oxygen flow-rate, before and after annealing. Spectral behavior of the real (black) and imaginary (red) part of the refractive index of films sputtered using different oxygen flow-rate and effects of the post-deposition heat treatment process (dashed lines). Effects of the Oxygen flow rate and thermal treatment on dispersion and absorption In order to establish baselines control over ITO films, we aim to understand the thickness-related influence on material parameters. We find that thinner films are obtained for higher oxygen concentration as a result of reduced sputter material deposition rate (Fig. 2a). Quantitatively we find that for a fixed deposition time (e.g. 1500s shown in S1 in Supplementary information) the ITO film thickness decreases by: t=aebx being t the thickness, a=509nm the y-intercept and b=0.047sccm 1 the decay constant (RMS 97%). The deposition conditions, summarized in the method section, enable a precise control of the thickness, with a repeatability within 10 nm (see SI) for the thickest film deposition (0 sccm, 2000 s). The films show a maximum roughness of around 3 nm. Taking all measured thicknesses measured using ellipsometry and profilometer, we find a consistent level within a 95% agreement. No substantial variation of the thickness is observed for thermally treated and untreated samples (SI Fig S1). In the interest of simplicity, we focus our discussion for the remainder of this paper on films evaporated for 1500 s, nevertheless, our findings are equally valid for other deposition times, which are summarized in the supplementary information, where an overall summary is provided. The stark contrast in obtainable ITO material properties discussed further below can even be seen visually (Fig.2b) and hints towards a strong ability to engineer the material properties. Four replicated samples are deposited for each experimental condition (i.e. Oxygen flow-rate, deposition time). The repeatability of the process is ensured by the concurrent low variability of the thickness and optical constants (well below 5%). A qualitative analysis on the film colorizations actually provides first insights on the doping type of the material [50]; a tendency to a brown color (Fig2b i,ii) indicates a higher Sn-In doping while a green-yellow colorization corresponds to the presence of oxygen vacancies (Fig2b iv,v). However, in order to quantitative analyze the optical constants, spectroscopic ellipsometry studies are reported in Fig 2c i-v for 1500 s deposition time. Beside 0 sccm, it appears that ITO films not subjected to an annealing process, films are predominantly not absorptive above 500 nm. In the wavelength range from 500 nm to 1680 nm, values of extinction coefficient are, in fact, below hundredths. A major effect attributed to thermal annealing is in fact the activation of the carrier [35], which is responsible of the optical absorption. As a consequence of that, films with 0 sccm (Fig 2c i) appear to be strongly absorptive in this region, due to the higher oxygen vacancies and consequent higher carrier concentration. Films deposited with this oxygen flow-rate could be embedded in NIR metamaterial perfect absorbers [51] or as a building block in meatasurface [52]. Consistently, for all the different oxygen flow-rates tested, after annealing, ITO thin films appear to be more absorptive. The value of 𝜅, the plasma frequency and an overall variation of the refractive index, being n(𝜔) and 𝜅(𝜔) in Kramer- imaginary part of the refractive index, of annealed samples substantially increases as a function of the wavelength in the IR region, compared to not annealed samples, thus producing a shift in the Kronig relation. The filling of the oxygen vacancies at 5 and 10 sccm (Fig 2 c iii-iv) induces the sputtered ITO films to show the lowest κ among the other groups and they might be a viable option for low-loss conductive transport layer in optoelectronic devices or as a sensing platform [49]. For higher oxygen flow rate (20, 30 sccm) the films become more absorptive in the IR. Figure 3. Complex refractive index and resisitivity depth profile a-c) Real (left y-axis) and imaginary part (right y-axis) of the refractive index spectral response investigated by ellipsometry. Different curves (red to green) represent different depth profile distribution within the film thickness (red/top layer, green/bottom layer) for 0 (a) , 10 (b), 30 (c) sccm after annealing. Bottom row represents the resistivity depth profile along the film thickness. Post-deposition annealing profoundly changes the structural and optical properties of ITO thin films, as previously discussed in the optical characterization. This process, in fact, represents an effective way to promote crystallinity and modify the physical features of ITO films, such as roughness, but also it contributes in drastically altering the carrier distribution. Our ellipsometry studies uses a fitting approach which contemporary minimize the error (RMS) computed in the fitting and takes into account a graded variation of optical/electrical parameters. This approach is essential for quantitatively pointing out that the resistivity, for annealed samples, is a function of the film depth as discussed below, which confirms that the thermal processes can favor the redistribution of carriers, homogenizing them throughout the sample, as illustrated by Buchanan et al [37]. Another effect, which can be ascribed to thermal heating, is related to optical absorption. Moreover, for oxygen flow-rates above 0 sccm, the absorption significantly increases in the IR region. As an obvious influence on the resistivity, this type of films displays an exponential decaying resistivity within the film depth (Fig. 3 b-c). Interestingly, the absorption and resistivity trend for film sputtered with a null Oxygen flow-rate (Fig. 3 a) have the highest value confined in the film core and it is significantly smaller (1 order of magnitude) than highest resistivity recorded for the ITO film sputtered at 10 sccm oxygen flow-rate [44]. We can speculate that being the thickest (approx. 600 nm) among the studied groups, the annealing time is not sufficient to completely redistribute the carriers throughout its depth. Figure 4. Resistivity measured with different techniques (Ellipsometer, 4-Probe and Hall Measurement) as function of the Oxygen flow-rate thermally untreated (a) and treated (b) samples. Mobility and carrier concentration for treated and untreated samples validated through direct (Hall Effect) and indirect (Ellipsometer) measurement Effects of the Oxygen flow rate and thermal treatment on the electrical properties Electrical properties, carrier concentration and mobility of ITO have been found previously to vary for different deposition techniques, but also for different process conditions for the deposition such as power, oxygen flow, and annealing temperature [3, 35, 38, 39]. In this section we focus on the impact of the oxygen flow-rate and thermal post deposition treatment on the electrical properties of ITO. Figure 4 summarizes the electrical properties of the ITO films sputtered with different oxygen flow rate (1500s), for thermally untreated (a) and treated samples (b), measured using three different methods, i.e. Hall measurement, 4-probe and spectroscopic ellipsometry. It is worth noticing that the measurements (direct and indirect) are in quasi-perfect agreement (>90% correlation). Only in case of the 4-probe measurement of non-annealed samples, the resistivity has a different trend. This has to be attributed to the instability of the contacts-film junction, due to the rather soft upper layer of the samples, which are not thermally treated. It is evident that not annealed thin films are less conductive, displaying one order of magnitude higher resistivity (a-b), an overall slightly higher mobility (c), lower carrier concentration (d) compared to the annealed samples. Therefore annealed films are generally more suitable for the implementation of capacitive sensors, and promotes the absorption in the optical telecom wavelength, enabling the fabrication of efficient electro-absorption modulators based on ITO films. As previously mentioned, for ITO, electrons are the majority carriers and they are originating mainly from the doping donor Sn and oxygen vacancies. For our sputtering conditions we show that increasing oxygen flow-rate produces an initial increase of the resistivity, induced by a lower carrier concentration. The lower carrier concentration is reached for Oxygen flow rate within 5-20 sccm. Therefore, increasing the oxygen flow rate replenishes the oxygen vacancies up to 10 sccm. For higher oxygen flow-rates the sputtered particles from the target cannot oxidize sufficiently, hence the ITO films are anoxic and sub-oxides such as InOx and SnOx are present in the films [40]. For annealed sample both the carrier concentrations and mobility overall decrease by increasing oxygen flow rates [41]. This can be attributed to the concurrent filling of the oxygen vacancies and the deactivation of the Sn donor by the overflowing oxygen. It can be said that 10 sccm of oxygen flow rate can be an optimum flow rate for obtaining high resistivity (low carrier concentration) and as previously shown low absorption. The mobility on the effect of annealing is within the same order of magnitude, although the trend is rather different. The mobility in non-annealed films is higher for lower carrier concentrations, while opposite trend is visible for annealed films. Measured ENZ wavelength as function of the deposition time and oxygen flow-rate b) Measured damping (𝜀′′) function of the wavelength (black solid line, left-axis) as function of the Oxygen flow-rate and corresponding damping (𝜀′′)) (red solid line, right- Figure 5. Experimental (interpolated) data of ITO film loss and ENZ-position as a function of oxygen process flow-rate. a) deposition time and oxygen flow-rate c) Scattering Time t as function of the deposition time and oxygen flow-rate. d) ENZ axis) for ITO film deposited for 1500 s Afterwards, for annealed samples, we investigate the variation of spectral response of the real part of the permittivity (e') for different oxygen flow-rate and deposition time. The x-intercept of the curve reveals the wavelength where ε' = 0, i.e. ENZ (see supplementary information). The trend of ENZ position as function of the oxygen flow-rate is strongly inherited from the resistivity response (Fig. 5 b), displaying a 96% cross correlation. This is further illustrated by the difference scattering time t which has complementary trend with respect to the 𝜀′′ as a function of deposition time and oxygen flow-rate. Our ability, to methodically tune ENZ position for a broad range of wavelength spacing from the E- to L-bands (1400 to 2500 nm) offers to engineer precise ENZ-based devices at targeted wavelengths (Fig.5 d). Considering 1500s deposition time, the longest wavelength reached is for 10 sccm, which corresponds to lower absorption, as well as higher resistivity. As a matter of fact, this further degree of freedom in setting the ENZ position could for instance enable the realization of sub-wavelength electooptic modulators based on ITO films embedded in integrated photonics circuit [27]. Through this study, RF-sputtered ITO films with crafty ENZ positioning in the optical telecom range can be deposited, thus lowering the energy required to switch from ENZ (high absorption) and epsilon-far-from-zero (low absorption) [45]. An intriguing field that could greatly benefit of this study is metatronics, allowing the implementation of nano-optical circuit entirely based on ITO film, wisely doped, using suitable process parameters [42]. For illustrating the potentiality of this study, we hereby demonstrate the possibility to finely tune RF sputtering parameters to achieve a metatronics circuits based on ITO with opportunity tailored permittivity using the previously discussed process parameters. Therefore, we combine experimental data related to ENZ position with numerical approaches. For a homogeneous thickness of ITO with tailored values of real and imaginary part of the dielectric constant one can design optical lumped- circuit elements in an integrated system. For instance, using a similar approach proposed by Engheta et al in [43], we design and analyze a nanophotonic circuit based on our ITO films, whose permittivity is function of the oxygen flow-rate used for deposition. It is possible to use sub- wavelength photonic circuit based on different ITO film, sputtered at different oxygen flow-rate, for interacting with a propagating mode. A λ = 1550 nm TE10 mode is launched in a Silicon waveguide with a permittivity of 12. Our proof-of-principle metatronic circuit is comprised of two ITO-based nanostructures positioned in the center of the waveguide, in two possible configurations (parallel/series). The thickness, 𝑡, of the ITO films is 50 nm, thus a lumped circuit model can be applied, being 𝑡≪𝜆 . In the equivalent circuit, the film with real part of the permittivity (𝜀′) larger also characterized by a damping (𝜀′′ > 0), which induces losses, modeled in the lumped model as a than zero acts as a capacitor, whereas the film with negative real part as an inductor. The films are resistances. A capacitor-like ITO film can be sputtered adopting a null oxygen flow-rate, obtaining an ENZ position shifted towards red with respect to the considered wavelength (1550 nm), while an inductor can be obtained using 20 sccm oxygen flow-rate, resulting into a blue shift of the ENZ position. When the films with 𝜀′ with opposite signs are placed in parallel configuration, there is a pronounced impedance mismatch, leading to a high reflection coefficient, which translates to a -12 dB transmission of the signal. Contrarily, for films placed in series the imaginary part of the permittivity becomes negligible and only insertion losses are present, achieving a transmission of -4 dB. Based on our previous work on ITO-based electrooptic modulators [13, 53] our future work includes actively reconfigured metatronic circuit building blocks on-chip using our ITO film control. Figure 6. 3D view of the numerical simulation of a metatronics parallel and series setup. A TE10 incident mode is propagating in a waveguide (ε = 12). Two ITO film in parallel a and series b configuration are placed in between of the waveguide. Color map of the simulation results for the normalized electric field intensity distributions for the series (a) and parallel (b). The transmission coefficients (S21) along with the equivalent circuit model and the process parameters used for obtaining specific permittivity values are reported on the right side. Discussion Understanding the effect of process parameters for tailoring ITO films electro-optical properties is crucial for both optimizing device performances such as in optics, electronics, or plasmonics, but also enables new material-platforms to realize metatronic circuits. In this study, we mapped the dependency of oxygen flow-rate and thermal annealing on the structural, optical and electrical properties of the ITO thin films deposited by RF sputtering. By tuning the oxygen flow rate we show control, after thermal treatment, of the absorption and the carrier concentration of the film. For thermally treated samples, we observed an overall increased absorption coefficient (𝜅), a 6- folds lower resistivity and significantly higher carrier concentration. Corroborated with modeling of the spectral response of the ITO films, we were able to precisely derive the resistivity and complex optical constant of annealed samples as function of the film depth, using a multi-layered fitting approach. For 10 sccm oxygen flow rate ITO film, we found the higher resistivity which was 10 times larger than the one obtained in null oxygen flow rate conditions, and the largest sweep throughout its depth. Ultimately, in annealed samples we found that the epsilon-near-zero reaches a maximum wavelength which red-shifts from 1.4 to 2.1 µm for 10 sccm oxygen flow-rate, only to blue-shift for higher oxygen concentration in the chamber, maintaining a similar trend with respect to the resistivity. We extend our study for different deposition time conditions aiming for mapping the ENZ position, damping and scattering time as function of oxygen flow-rate with deposition time. We simulate a sub-wavelength metatronic circuit based on ITO films, placed in the center of a waveguide, which exhibit tailored permittivity according to specific oxygen flow-rate. We demonstrated the possibility to use a lumped circuit entirely based on ITO as sub-wavelength filter at 1550 nm in an integrated photonic circuit. In conclusion, in this novel study, we demonstrated the ability to accurately tune the electrical and optical properties of ITO films in a wide range of frequency ranging from VIS to IR. We thence show a precise control over conductivity, carrier density, and mobility of the ITO films enabled by tailoring of process parameters, such as oxygen flow rate, deposition time and post-deposition thermal treatment, assessed thorough cross-validation procedure. By controlling the oxygen flow ratio during sputtering, oxygen vacancies could be filled, making it possible to prepare optimal ITO films that exhibited high electrical performance, while still preserving optical transparency in a wide range of frequency. Following this approach, we demonstrate a fabricatability and repeatability of epsilon-near-zero (ENZ) on-chip platform. We anticipate these findings to enable a enables a plurality of functional devices for fields to include opto-electronic, plasmonic, metasurfaces, and possibly most novel, to metatronics. Using this rigorous material control, we finally give an example showing the ability to engineer a metatronic-based sub-wavelength building block demonstrating an optical switch. Methods RF Deposition: ITO ultra-thin films were deposited on a cleaned Si substrate with a nominal 300 nm SiO2 on it (1cm 1cm) at 313K by reactive RF sputtering using Denton Vacuum Discovery 550 Sputtering System. They were prepared with the same time which is 1500 seconds. The target is consisting of 10% SnO2 and 90% In2O3 by weight. The ITO films were prepared with the same Argon flow-rate which is 40 sccm and different oxygen flow-rates which are 0 sccm, 5 sccm, 10 sccm, 20 sccm, and 30 sccm respectively. All the deposition time is 1500s. There are four chips for each group. Two of them are tapped for later profilometer measurement. The vacuum setpoint is 5 Torr before deposition and the target will be pre-sputtered with the same deposition condition for 120s to remove the surface oxide layer of the target to avoid the contamination of the films. RF voltages were 300 voltage and RF bias were 25 voltage. After all parameters reached their set- points, deposition began. Annealing Process: After deposition, few samples were annealed in a sealed chamber filled with H2 and N2 in order to avoid the influence of oxygen in the air during the annealing process at 350oC for 15 min. Ellipsometry: We carried out spectroscopic ellipsometry measurement using J.A. Woollam M- 2000 DI, which covered wavelength from 200 nm to 1680 nm. Analysis of the data used the corresponding CompleteEASE to extract thickness, complex optical constants, and other electrical parameters. Silicon substrate and a nominal 300 nm silicon dioxide layer were also considered in ITO fitting model since, being commercial products, the related information were not exhaustive for analysis. We first fit the transparent region using Cauchy model to find out the closest thickness value for ITO thin film and fix it. Then we fitted the data using B-spline model and subsequently we expanded the fitting region from transparent region to the entire wavelength region. After that Chityuttakan, C., Chinvetkitvanich, P., Chatraphorn, S. & Chatraphorn, S. Influence of Qin, F. et al. Indium tin oxide (ITO)-free, top-illuminated, flexible perovskite solar cells. J. we re-parameterized the data using different oscillators in GenOsc, i.e. Drude, Cauchy-Lorentz and Lorentz oscillators. More details on the fitting model are provided in the SI. 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Acknowledgements VS is funded by AFOSR (FA9550-17-1-0377) and ARO (W911NF-16-2-0194) and HD by NASA STTR, Phase I (80NSSC18P2146).
1906.00458	1	1906	2019-06-02T17:54:24	Molecular monolayer stabilizer for multilayer 2D materials	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	2D van der Waals materials have rich and unique functional properties, but many are susceptible to corrosion under ambient conditions. Here we show that linear alkylamines are highly effective in protecting the optoelectronic properties of these materials such as black phosphorous (BP) and transitional metal dichalcogenides. As a representative example, n-hexylamine can be applied in the form of thin molecular monolayers on BP flakes with less-than-2nm thickness and can prolong BP's lifetime from a few hours to several weeks and even months in ambient environments. Characterizations combined with our theoretical analysis show that the thin monolayers selectively sift out water molecules, forming a drying layer to achieve the passivation of the protected 2D materials. The monolayer coating is also stable in air, hydrogen annealing, and organic solvents, but can be removed by certain organic acids.	physics.app-ph	physics	Molecular monolayer stabilizer for multilayer 2D materials Cong Su1,2,‡, Zongyou Yin3,‡,, Qing-Bo Yan1,4,‡, Zegao Wang5, Hongtao Lin6, Lei Sun7, Wenshuo Xu8, Tetsuya Yamada9, Xiang Ji3, Nobuyuki Zettsu9, Katsuya Teshima9, Jamie H. Warner8, Mircea Dincă7, Juejun Hu6, Mingdong Dong5, Gang Su11, Jing Kong2,10, & Ju Li1, 1 Department of Nuclear and Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 2 Research Lab of Electronics (RLE), Massachusetts Institutes of Technology, Cambridge MA 02139 3 Research School of Chemistry, The Australian National University, Canberra, Australian Capital Territory 2601, Australia 4 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China 100049 5 Interdisciplinary Nanoscience Center (iNano), Aarhus University, Aarhus 8000, Denmark 6 Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge MA 02139 7 Department of Chemistry, Massachusetts Institutes of Technology, Cambridge MA 02139 8 Department of Materials, University of Oxford, OX1 3PH, UK 9 Center for Energy and Environmental Science, Shinshu University, 4-17-1 Wakasato, Nagano, Japan 380-8553 10 Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge MA 02139 11 School of Physical Science, University of Chinese Academy of Sciences, Beijing, China 100049 ‡These authors contributed equally. Corresponding authors: Ju Li ([email protected]), Zongyou Yin ([email protected]) 1 Abstract 2D van der Waals materials have rich and unique functional properties, but many are susceptible to corrosion under ambient conditions. Here we show that linear alkylamines n-CmH2m+1NH2, with m = 4 to 11, are highly effective in protecting the optoelectronic properties of these materials such as black phosphorous (BP) and transition metal dichalcogenides (TMDs: WS2, 1T'-MoTe2, WTe2, WSe2, TaS2, and NbSe2). As a representative example, n-hexylamine (m = 6) can be applied in the form of thin molecular monolayers on BP flakes with less-than-2nm thickness and can prolong BP's lifetime from a few hours to several weeks and even months in ambient environments. Characterizations combined with our theoretical analysis show that the thin monolayers selectively sift out water molecules, forming a drying layer to achieve the passivation of the protected 2D materials. The monolayer coating is also stable in air, H2 annealing, and organic solvents, but can be removed by certain organic acids. KEYWORDS: molecular monolayer stabilizer, multilayer 2D materials, linear alkylamine 2 Introduction Passivation of materials in air and water is foundational to our civilization (1). When we consider the robust ultrathin passivation of 2D materials (2 -- 7), it should be even more essential because (a) the thickness of passivation layer on 3D materials like Si, Al, Cr etc. stays 2-5 nm over very long time, which is an insignificant fraction of the remaining unreacted bulk material. However, one cannot say this for thin 2D materials with their total thickness likely comparable to the native oxide passivation layers. Thus, the atomistic details of passivation matter even more here. (b) An ultrathin, electronically insulating layer provide opportunity to engineer extremely thin vertical heterostructures, akin to the SiO2/Si gate in metal-oxide-semiconductor field-effect transistors (MOSFET). For these reasons, it is becoming increasingly critical to facilely passivate layered materials such as transition metal dichalcogenides (TMDs), black phosphorous (BP), silicene, stanine (8 -- 11) etc., which are susceptible to corrosion under ambient conditions with air, water, or even small amounts of acidic or basic contaminants (9, 10, 12 -- 18). Several passivation strategies have been developed for these layered materials including covering by more robust 2D materials such as graphene (19) and hexagonal boron nitride (hBN) (20). However, many previous strategies suffer from processability issues and other drawbacks: Metal oxide coatings are prone to cracking (13, 21); polymers (e.g. poly(methyl methacrylate) (PMMA), polystyrene (PS), Parylene, and perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA)) are readily attacked by organic solvents and offer limited durability (18, 22 -- 25); self- assembled monolayers with silane-terminated octadecyltrichlorosilane (OTS) are highly toxic (26). Here, we discovered a one-pot scalable process for passivating a large variety of 2D van der Waals materials. It involves coating a nanometer-thick monolayer of linear alkylamines onto the surface of 2D materials which greatly increases the lifetime of these materials in ambient 3 environments with moisture and can sustain even harsh aqueous and thermal conditions. First- principles simulations suggest that the alkylamine coating significantly slows down the permeation of O2, which reacts with the 2D layered material to form an ultra-thin oxide passivation layer, and completely blocks H2O molecules and shuts down the cycles of oxidation- dissolution, leading to the extended lifetime for many different classes of 2D crystals. Since BP is the most vulnerable to corrosion among the 2D van der Waals materials studied in this work and creates the most challenges for processing, it is used here as an illustrative example of the alkylamine coating. As a representative example of linear alkylamines n-CmH2m+1NH2, n-hexylamine (m=6) coating onto BP is systematically investigated both theoretically and experimentally in its corrosion inhibition mechanism and behaviors. Results As presented in Figs. 1A-C, the coating process is divided into two steps: i) The sample together with silicon substrate is put in the liquid n-hexylamine for 20 minutes under 130 oC. This step creates coating on sample, but minor cracks might exist. ii) To fix the cracks, the sample is then immersed in hexylamine vapor for another 20 minutes at 130 oC and then annealed in argon for 30 minutes under 200 oC after the surface cleaned by hexane. The hexane cannot remove the hexylamine coating but only the surface contamination, as shown in the later section. More detailed coating procedures are presented in the Supplementary Materials (SM) (27, 28, 37 -- 39, 29 -- 36). The optimization of coating parameters of n-hexylamine onto BP is shown in Table S1. Once mechanically exfoliated, the bare BP flakes are highly reactive and chemically unstable. After keeping a 3-nanometer-thick BP flake (Fig. 1D) in ambient air (humidity ~35%) 4 for 2 days (the thickness is estimated using method from ref. (9)), only vague traces remain (Fig. 1E), even when care is taken to prevent light exposure, known to accelerate the damage. As shown in Fig. 1F, the three characteristic Raman peaks of BP at 361 cm-1 (Ag1), 438 cm-1 (B2g), and 466 cm-1 (Ag2) completely disappear after 2 days. The degradation of BP was further expedited when exposed to light, in line with previous reports (9) which showed that the lifetime of BP (defined as the time needed for the Raman intensity to drop to e-1 of its original) is τ ≈ 1 hour when a 2.8 nm-thick sample is exposed to a photon flux of 1.8 × 103 W/cm2, and τ ≈ 10 minutes when exposed to a photon flux of 1.7 × 104 W/cm2. In contrast, n-hexylamine protected BP (HA-BP hereafter), which is kept side-by-side with the unprotected one, exhibits robust BP characteristics for a much-extended period. The difference in optical contrast for HA-BP between 0 day and 111 days is essentially indiscernible (Figs. 1G and H); 31% of the intensity of Ag2 was retained after 111 days (Fig. 1I). The photon fluence seen by HA-BP during Raman measurements in 111 days is equivalent to light exposure of 1.0 × 105 W/cm2 for ~2 hours in total. Since such photon exposure is already known to be substantial to cause the degradation of bare BP (ref. (9)), we conclude that the lifetime of HA-BP can be extended even further if the sample was not exposed to the laser beam of the Raman characterization. The coating process involves the proton transfer of the hydroxylated BP to the -NH2 group of n-hexylamine based on the evidences below. First-principles simulations suggest that n- hexylamine forms a molecular monolayer as shown in Fig. 2A. The top layer of the BP surface is rapidly oxidized from the oxygen dissolved in liquid hexylamine, forming P -- OH, P -- O-, or P=O surface groups. Experimental evidences supports a model where the acidic P -- OH groups on the BP surface and the terminal -- NH2 groups of alkylamines undergo a Brønsted-Lowry acid-base reaction to form a layer of alkylammonium salts that coat the BP surface through a strong 5 electrostatic interaction with the deprotonated P -- O- surface sites. Confirmation that the neutral -- NH2 group in n-hexylamine becomes charged (i.e. -- NH3+) came from X-ray photoelectron spectroscopy (XPS): comparing the N 1s peaks between HA-BP, dodecylamine (C12H25NH2, R-NH2), and methylammonium chloride (CH3NH3Cl, R -- NH3+) reveals that HA-BP and R -- NH3+ have the same binding energy, which is blue-shifted by 2.4 eV from that of R-NH2 (Fig. 2B). Contact angle measurements also show that the surface of BP becomes more hydrophobic after HA coating (fig. S1), confirming that the HA coating is indeed terminated by alkyl chains, not by amine/ammonium groups. Inspection by atomic force microscopy (AFM) of the height profile of the same 2D flake before and after coating revealed that the n-hexylamine coating is around 1.5 nm thick (Fig. 2C), which is consistent with the theoretical chain length of n-hexylamine.(40) This demonstrates that the deposition of n-hexylamine molecules is self-limiting. Polar organic solvents including acetone, ethanol, or isopropanol, as well as non-polar solvents like hexane, cannot remove the n- hexylamine coating, indicating that the interaction between n-hexylamine and BP is strong enough to sustain solvent attack. We also note that n-hexane does not impart any corrosion protection, attesting that the amine group is key for this function and that the alkyl chain itself cannot bind strongly on BP. We employed first-principles calculations to investigate the transfer of protons when n- hexylamine approaches P -- OH (Fig. 2D), formed by reacting with the water from the n- hexylamine coating solution. Among various structural possibilities after systematic study with results shown in figs. S2-S5, the most likely reaction pathway agrees with the scenario (P-O- -- NH3+-C6H13) proposed above and yields a bonding energy of 0.97 eV, which is 3-4 times stronger than the pure vdW interaction (~0.33 eV between n-hexylamine and pure BP, ~0.22 eV 6 between amines and graphene (41)). The electronic density distribution shows that the H atom shares its orbital much more with N atom than with O atom (inset of Fig. 2D), and a Bader's charge analysis indicates that n-hexylammonium (C6H13NH3+) carries a net charge of +0.89e, and to compensate, the rest has -0.89e. In Fig. 2E, the migration energy barrier of H2O penetrating through n-hexylamine is calculated to be 1.4 eV and O2 1.0 eV, when n-hexylamine covers BP in the densest possible packing structure (hereafter defined as 100% coverage, shown in figs. S6 and S7); when the coverage drops to 66.7%, the migration energy barrier reduces to 0.2 eV for H2O permeation and no barrier (0 eV) for O2. When the HA coverage further decreases to 50% or 25%, the migration of both H2O and O2 through the HA layer towards the surface of BP is barrierless. Combining this theoretical analysis with the time-evolution XPS data on phosphorous oxide concentration (Figs. 2F and G), where the oxidization speed of phosphorous after n-hexylamine coating is significantly reduced by 32 times at the beginning of oxidation (fitting method and definition of time constant can be found in SM), we deduce the coverage density of n-hexylamine on BP must be more than the defined 66.7% coverage on the surface of BP. With these conclusions, a schematic illustration of the molecular monolayer can be shown in Fig. 2H. The top oxidized BP layer of POx together with the coated n-hexylamine monolayer forms a dense protection layer for the BP underneath. It lowers down the penetration speed of O2 molecule significantly and blocks the H2O molecule almost completely under room temperature, thus stabilizes the surface passivation layer (the oxidized BP at the top). The anti-corrosion effect conferred by organic monolayer is not limited to n-hexylamine. Indeed, other linear alkylamines n-CmH2m+1NH2 with m = 4 to 11, including n-butylamine (n- C4H9NH2), n-pentylamine (n-C5H11NH2), n-octylamine (n-C8H17NH2), n-decylamine (n- 7 C10H21NH2), and n-undecylamine (n-C11H23NH2), all consistently displayed similar anti- corrosion effects in ambient air. Their coatings onto BP for anti-corrosion demonstration are presented in Table S2 in SM, and the growth parameters for coating all these alkylamines with different carbon chain lengths are summarized in Table S3. To demonstrate the passivation efficacy for actual optoelectronic devices in ambient and aggressive environments, we fabricated two BP-flakes-based photodetectors. As a direct bandgap semiconductor, with its Egap continuously tunable from ~2 eV (single layer) to 0.3 eV (bulk) (42) by varying the number of layers, BP stands out as a promising material for photonic devices from near-infrared to mid-infrared. The layout of the uncoated BP detector with a channel length and width of ~3 μm and ~5 μm, respectively, between the Ti/Au electrodes is shown in Fig. 3A. The thickness of the BP here is 74 nm (fig. S8). The n-hexylamine-coated BP photodetector is shown in Fig. 3D, with comparable channel dimension and a BP thickness of 55 nm (fig. S8). The photocurrent as a function of input optical power under zero voltage bias (Figs. 3C and F, uncoated and coated respectively) was measured in ambient air with a 1550-nm laser. Both devices exhibited increased photocurrent with input power before etching (black lines labeled with pre-etching in these plots). After dipping the devices in H2O2 for 5 seconds and drying them subsequently, obvious degradation was observed under optical microscope on the uncoated BP device (Fig. 3B), while little change was found on the coated one (Fig. 3E). As evidenced by the photoelectric signal, corrosion caused severe damage to the uncoated optoelectronic device, with the photocurrent dropping to zero. In contrast, the n-hexylamine coated photodetector device maintained 78.6% of its original photocurrent based on the photocurrent values of 28.7 µA@post-etching and 36.5 µA@pre-etching under photoexcitation with the same input power of 3 mW. The slight drop of performance likely originates from defects in the coating layer within 8 the boundaries between the electrode metal and the BP flake, and also likely originates from the residue of PMMA during the deposition of electrodes that blocks the growth of hexylamine. Such monolayer protection is effective not only for BP, and also for other layered 2D materials. Here to accelerate corrosion tests for n-hexylamine-coated 2D materials, we used harsh aqueous H2O2 or KMnO4 solutions as etchants. In Table 1, we take the optical microscopy images during the corrosion exposure for each 2D material, including BP, WS2, WSe2, 1T'- MoTe2, WTe2, TaS2, and NbSe2. It should be noted that exfoliated BP, 1T'-MoTe2, WTe2, NbSe2 and chemical vapor deposition (CVD)-grown single-layer WS2 are known to be particularly susceptible to ambient corrosion and are readily attacked by solutions of H2O2. WSe2 and TaS2 are less vulnerable and require stronger oxidants for corrosion. n-hexylamine is proved to be effective in protecting these layered materials based on the comparison in optical image between uncoated and coated 2D materials after their exposure to the same etchants. A video of the corrosion retardation for BP is presented as Supplementary Movie. Despite the fact that n-hexylamine is sturdy under various environments, it is still removable by certain organic acids. Presumably, the organic-media-supported protons can penetrate the hydrophobic alkyl layer, protonate the ionized surface P-O- groups, disrupting their electrostatic interaction with the alkylammonium cations. This removing protocol is effective both for the amine coating on BP and TMDs, without affecting the passivation oxidized layer and the materials underneath (Section 5 of SM). Discussion Amines with low water solubility have long been known as efficient and reliable corrosion inhibitors for steels (40, 43). It is found here that it also serves as an effective coating for 2D layered materials, by blocking water for the native thin oxide layer growing at the 9 interface between the 2D material and the alkylamine coating. The photooxidation of bare BP starts with the synergetic effect of oxygen, water and light, where phosphorous transformed to a layer of acidic phosphorus species. The thin layer of acid then coarsens into a droplet, leaving a fresh phosphorous surface in contact with ambient air, and the oxidation process starts once again (44). n-hexylamine monolayer lowers the permeability of oxygen and strongly blocks the water molecules from directly contacting the oxide passivation layer and phosphorous. Although the first BP layer is still oxidized by O2, it is isolated from ambient humidity by the hydrophobic alkyl monolayer, which prevents the water from dissolving this top native oxide that would have perpetuated the corrosion. Our experimental finding of the passivation effect on BP is consistent with the theoretical prediction that mere BP + O2 reaction forming BP-POx should be fully stable and self-limiting at ~1-2 nm if no moisture exists (30). In summary, we have developed a strategy to effectively slow down the corrosion of BP by coating of alkylamine monolayer onto its surface. General applicability on a variety of other layered materials is also demonstrated. The alkylamine monolayer is robust in a range of chemical and thermal environments, including ambient air. The facile coating method can be implemented with many different substrates and is compatible with all linear alkylamines no shorter than n-butylamine, thus offering a platform for controlling the surface physics and chemistry of a rich tableau of 2D materials. Because of its simplicity, eco-friendliness and low cost, we envision it to be scalable and adaptable in various industrial configurations. 10 Acknowledgements: C. Su and Z. Yin would like to thank Philip Kim for granting lab access for the glove box enclosed AFM. C. Su would like to thank Greg Lin and Frank Zhao for helpful discussions. Z. Yin thanks Pablo Jarillo-Herrero for providing glove box. J.L., C.S., M.D., and L.S. acknowledge support by the Center for Excitonics, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Basic Energy Sciences under award No. DE-SC0001088. J.L., C.S. and Z.Y. acknowledge support by NSF ECCS-1610806 and ANU Futures Scheme (Grant No. Q4601024). Q.B.Y. and G.S. acknowledge support in part by the MOST of China (Grant No. 2013CB933401), the NSFC (Grant No. 11474279), and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB07010100). H.L. and J.H. acknowledge funding support provided by NSF under award No. 1453218. J.H.W. thanks the support from the Royal Society. J.K. and C.S. acknowledge support from the U.S. Army Research Office through the MIT Institute for Soldier Nanotechnologies, under Award No. 023674. T.Y., N.Z., and K.T. acknowledge support by Inter-University Cooperative Research Program of for Materials Research, Tohoku University(15G0031). 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A, The layered materials on SiO2/Si wafer are immersed in the liquid n-hexylamine contained in a glass vial, which is then capped and placed inside the silicone oil. B, In the first step, the oil bath is heated up to 130 °C and maintained for 20 minutes. Hexylamine is coated on the layered material with minor defects. C, In the second step, the sample is steamed in the amine vapor under 130 °C for 20 min, followed by an annealing in 200 °C for 30 min. This step is aimed for fixing the defects in n-hexylamine overlayer. D, E, Optical images of an exfoliated BP flake on SiO2/Si wafer before aging (on 0 14 day), and after 2-day aging in ambient conditions where only the blurry marks of original flake could be identified. F, The corresponding Raman spectra at λ = 532 nm of the sample shown in D and E. G, H, Optical images of n-hexylamine-coated BP flakes on SiO2/Si before aging (on 0 day), and after 111-day aging under the same ambient conditions. I, The corresponding Raman spectra of the n-hexylamine-coated sample on the 0, 13, 41, 111, and 186 days. The green dots in D, E, G, and H are laser spot positions for repeated spectra acquisition. All samples are dried for 30 min at 120 oC in air right after prepared. All Raman spectra shown above have been renormalized and calibrated to Si (reference) peak intensity. The scale bars are 5 μm. 15 Fig. 2. The mechanism of n-hexylamine coating on BP. A, Proton transfer takes place during the coating process (upper figure) and the n-hexylamine monolayer is formed on BP after the coating process is done (lower figure). R- in the diagram refers to C4H9- when representing 16 hexylamine. B, XPS spectra of nitrogen 1s peaks on HA-BP, dodecylamine (C-NH2), and CH3NH3Cl (C-NH3+), proving that the amino group of n-hexylamine coated on BP is in ionic state -- NH3+. C, The AFM data revealing the thickness of a BP flake with 24 nm before coating (pink line) and the thickness increment after hexylamine coating (violet line). D, The schematic structure of n-hexylamine adsorbed on BP, where red-, blue-, gray-, purple-, and white-colored balls represent oxygen, nitrogen, carbon, phosphorous, and hydrogen, respectively. Inset: the contour map of valence electron density on the plane containing O, N atoms and the H atom between them, which corresponds to the part marked by rectangle dashed line. E, The energy profile of H2O and O2 molecules when penetrating through the hexylamine molecule layer. The y-axis is the distance between the bottom atom of H2O or O2 and the surface of BP, denoted as d. Blue and red curves represent H2O and O2 penetration processes, respectively. The four groups of curves represent different coverages of 25%, 50%, 66.7%, and 100% (detailed coverage definition illustrated in fig. S6 in SI), as marked. The horizontal grey lines are the locations of the top and the bottom of hexylamine molecules. F, The P 2p peaks and oxidized phosphorous species (R-P-O) of XPS curves on HA-BP measured as coated, after 2 days, and after 46 days. G, The phosphorous oxide concentration as a function of time between n-hexylamine-coated (violet triangles) and un-coated BP samples (pink squares). Inset: a blow-up of the un-coated sample data between 0-15 hours. Both data sets are fitted with exponential curves. The pink and violet solid lines are fittings of the scattered data pointing to the un-coated and HA-coated samples, respectively. Note that the oxidation of HA-BP is significantly slow down starting from 100 hours, so a second curve fitting is marked (dashed violet line). H, Schematic illustration of the structure of BP after coated by n-hexylamine. The first layer of BP is oxydized and forms a part of protective layer together with the n-hexylamine coating. The surface protective layer (hexylammonium + first layer oxidized BP) protects the rest of BP underneath. 17 Fig. 3. Photodetectors and etching test. A, B, The uncoated BP devices before and after etching by an aqueous solution of 30 wt% H2O2. The optical images of the devices are shown in the upper row and the corresponding schematic layouts are shown in the lower row. The Ti/Au electrode in (a) is marked by yellow stripes after the picture is taken. C, Photocurrent as a function of input optical power under zero bias voltage. D-F, n-hexylamine-coated-device counterparts of sub-figures (a-c). The scale bars are 10 μm. 18 Table 1. Protection of various 2D materials with n-hexylamine coatings. BP, WS2, 1T'- MoTe2, WTe2, WSe2, TaS2, and NbSe2 were coated with n-hexylamine and dipped inside etchants of H2O2 or KMnO4 solution (depending on the respective material reactivity) as an accelerated lifetime test. The uncoated counterparts were processed in parallel with the coated parts under identical etching conditions. Scale bars represent 10 μm. bare coated before exposure after exposure before exposure after exposure material / etchant with etching time BP (exfoliated) / 20sec in H2O2 (30 wt. % in H2O) WS2 (CVD, monolayer) / 5sec in H2O2 (30 wt. % in H2O) 1T'-MoTe2 (exfoliated) / 10sec in H2O2 (30 wt. % in H2O) WTe2 (exfoliated) / 30sec in H2O2 (30 wt. % in H2O) (exfoliated) / 1min in KMnO4 (0.02mol/L in WSe2 H2O) TaS2 (exfoliated) / 1min in KMnO4 (0.01mol/L in H2O) NbSe2 (exfoliated) / 20sec in H2O2 (30 wt. % in H2O) 19 Supplementary Materials Molecular monolayer stabilizer for multilayer 2D materials Table of contents 1. Coating methods and protection testing I. Coating of n-hexylamine (C6H13NH2) onto unstable 2D flakes of black phosphorous (BP), MoTe2, WTe2, WSe2, TaS2, and NbSe2 II. Coating of n-hexylamine onto relatively stable WS2 III. Coating other alkylamines and control molecules onto BP IV. Protection testing results for alkylamines coated BP 2. Characterization methods I. Contact angle measurement II. Optical microscopy and Raman III. X-ray photoelectron spectroscopy (XPS) and surface coverage estimation IV. Atomic force microscopy (AFM) 3. First-principles calculation I. Calculation method details II. Adsorption energies of different configurations for hexylamine-BP system III. IV. Surface coverage for hexylamine-BP system Energy barrier calculations during kinetic transport for hexylamine-BP system 4. Photodetector device I. BP photodetector fabrication II. Channel BP characterization with AFM III. Measurement setup for characterizing BP photodetectors IV. Photothermoelectric photocurrent generation in BP photodetectors 5. Removability testing I. II. n-octylamine/BP n-hexylamine/WSe2 6. Protection techniques comparison 1. Coating methods and protection testing I. Coating of n-hexylamine (C6H13NH2) onto unstable 2D flakes of black phosphorous (BP), MoTe2, WTe2, WSe2, TaS2, and NbSe2 In our experiment, n-alkylamine (Sigma-Aldrich, 99%) was used as purchased. The two dimensional (2D) crystals are mechanically exfoliated and transferred or directly chemical vapor deposition (CVD) onto a piece of silicon wafer (with a 190 nm SiO2 surface layer), denoted as 2D/SiO2/Si, after SiO2/Si substrates were washed in water, isopropyl alcohol (IPA) and acetone, respectively, by sonication for 10 mins, followed by the annealing in air for 30 min at 200 °C to remove the absorbed water on surface. The exfoliation was done with Scotch Tape in a glove box for BP, but in the air for other four 2D materials: MoTe2, WTe2, WSe2, TaS2, and NbSe2. In the following, coating of n-hexylamine onto BP is taken as the example to introduce the whole coating procedure. The whole coating process can be divided into two steps, which is performed in the Acrylic glove box, as schematically explained in the Fig. 1. Such glove box can maintain a certain level (~30 ppm) O2 and H2O, which is necessary for uniform oxidation and hydroxylation of BP surface layer during amine growth. In brief, 2D/SiO2/Si samples were completely immersed in excess amount (2 - 10 mL, depending on the size of reactor vial or petri dish) of n-hexylamine contained in a glass vial or petri dish, covered with a cap. Such vial or petri-dish based reactor was immersed into a silicone oil bath or sitting on a hotplate which will be heated up for the first step growth. This step growth was maintained about 20 min at 130 oC and then cooled down to room temperature (RT) and kept for half an hour to complete the first step growth. After this, samples were taken out and rinsed with hexane to remove the attached amine residues. For the second step growth, the samples under heating at 130oC will be steamed in the amine vapor for about 20 min, with the subsequent cooling down to RT for another half an hour. After gently rinsed with hexane and dried, the samples were transferred to another glove box with low O2 and H2O levels (<0.1ppm) to be sealed in a glass vial for the final simple post-growth annealing at 200 °C for 30 min. After cooling down, the sample was then ready for characterization and testing. n-hexylamine coating parameters were optimized step by step based on BP (Table S1). The similar parameters are applied for n-hexylamine coating onto other 2D materials (Table 1 in main 2 text), and the parameters are optimized for other amine molecules with different carbon chain lengths onto BP (Table S2 and S3). II. Coating of n-hexylamine onto relatively stable WS2 The coating protocols are slightly different from above. As-purchased n-hexylamine was directly used for the coating without further purification. WS2 samples were grown onto SiO2 (300 nm)/Si substrates by CVD method.[1] Subsequent deposition of n-hexylamine was realized by one- step growth. In order to drive oxygen out of n-hexylamine before the growth, n-hexylamine was boiled at ~130 °C for 30 min in air. Then, the WS2/SiO2/Si samples were immediately immersed into boiling n-hexylamine carefully and covered with the cap (note: the cap should not be fully tightened to avoid high pressure building-up in the bottle that can lead to explosion). After growth and subsequent cooling down to room temperature, the samples were collected and gently rinsed with hexane followed by immediate drying with N2 gas blowing. Similarly, as the two-step growth for other 2D material, a simple post-growth annealing was also applied for amine coated WS2/SiO2/Si at 200 oC for 30 min in the argon and then the samples are ready for testing and characterization. III. Coating other alkylamines and control molecules onto BP Besides n-hexylamine (n-C6H13NH2), BP crystals were also coated with other linear alkylamines with different carbon chain lengths, including n-butylamine (n-C4H9NH2), n- pentylamine (n-C5H11NH2), n-octylamine (n-C8H17NH2), n-decylamine (n-C10H21NH2), n- undecylamine (n-C11H23NH2). The main difference in coating process for these amine molecules lies in the coating temperatures, which are normally set to be below or close to the boiling point of each amine molecule for safety considerations. The coating parameters are summarized in the table S2 below. After the coating, all these amine-coated BP samples were tested using H2O2 as etchant, where the protection effect is evaluated by comparing the optical microscope images before and after the H2O2 etching (table S3). Furthermore, two control experiments were performed in terms of the molecule types used for coating. First, we tested benzylamine (C6H5CH2NH2), which is a non-linear alkylamine. Non- 3 linear benzylamine is expected to be challenging to form a high-coverage dense monolayer on the surface of 2D material as there exists un-coverable gap between the benzene ring structures, thus affecting the protection as demonstrated below. Second, amino-group-free alkane molecule, i.e. n- hexane (n-C6H14), was tested on BP. As presented in table S3, n-hexane coating does not have any protection capability. This further consolidates our proposed monolayer link model between alkylamine and BP as discussed detailed in the main text. IV. Protection testing results for alkylamines coated BP Table S1. Optimization of coating parameters of n-hexylamine on BP. The etching method with H2O2 (30% wt. in H2O) etchant/oxidant is as follows: dip BP into H2O2 for 20 sec, remove BP from H2O2, and leave dipped BP for 2 mins in air. Scale bars are 20 μm. Before applying oxidant After applying oxidant Pure fresh BP (not protected) n-hexylamine-BP: Immersed in n- hexylamine for 6 days at RT (not protected) n-hexylamine-BP: 70 oC & 20 mins (not protected) 4 n-hexylamine-BP: 90 oC & 20 mins (not protected) n-hexylamine-BP: 110 oC & 20 mins (not protected) n-hexylamine-BP: 130 oC & 20 mins (partially protected) n-hexylamine-BP: two-step coating aforementioned (protected) 5 Table S2. Protection testing for different alkylamines and hexane. The optical microscope images were taken before and after etching/oxidation of BP flakes with the same etching method as described above. Coating temperature Before applying oxidant After applying oxidant (oC) No treatment Pure fresh BP (not protected, the same as Table S1) n-butylamine- BP 90 n-pentylamine- BP 110 n-hexylamine- BP 130 6 7 n-octylamine- BP 140 160 120 (partially protected) 150 180 180 n-decylamine- BP n- undecylamine hexane-BP (not protected) benzylamine- BP (not protected) 90 120 150 180 8 Table S3. Coating parameters used for coating amines and hexane on 2D materials. n-C4H9NH2 n-C5H11NH2 n-C6H13NH2 n-C8H17NH2 n-C10H21NH2 n-C11H23NH2 C6H5CH2NH2 n-C6H14 Boiling point Coating temperature (oC) 90 110 130 140-160 150-180 180 180 (not protected) 80 (not protected) (oC) ~ 78 105 131.5 ~176 ~217 ~240 185 68.7 Coating time Post-coating annealing Two steps (1st step: 20 min heated in liquid; 2nd step: 20 min 200 oC for 30 min in argon steamed in vapor) 9 2. Characterization methods I. Contact angle measurement The contact angle measurement was done using a home-made zoom-in microscope.[2,3] The analysis is processed with the "contact angle" plug-in software developed by Marco Brugnara in ImageJ software. The measurement results on SiO2 (figs. S1A and B) indicate no n-hexylamine was deposited onto SiO2/Si wafer. This test also verifies the eligibility of AFM measurement on height change of 2D flakes before and after amine coating, as the flake thickness can be consistently referenced to the surface of SiO2/Si wafer. On the contrary, for WS2 (figs. S1C and D) and BP (figs. S1E and F), there is an increase in the contact angle after coating of n-hexylamine, indicating the successful coating of amine molecules on WS2 and BP. It should be noted that the contact angle only qualitatively reveals the surface wettability for these two materials, as the surface of Si wafer is not totally covered by WS2 or BP flakes. Fig. S1. Contact angles of water droplet on different substances. The images of a water droplet on (A, B) SiO2, (C, D) WS2 flakes on SiO2, and (E, F) BP flakes on SiO2 before and after n- hexylamine-coating process, respectively. The contact angles are marked within the images. Note that since the flakes are scattered on wafer and cover about 10% of the surface area, the angle in these image is a qualitative revelation of the hydrophobicity of the n-hexylamine-coated layer. The angles are averaged from ten sites on each sample. 10 II. Optical microscopy and Raman spectroscopy All the 2D samples in this work were imaged using an optical microscope (Axio Imager (Carl Zeiss)). The Raman spectra of all the 2D materials were measured using a Horiba Jobin-Yvon HR800 Raman Spectrometer. The laser spot size is 1 μm in diameter and a 100× objective with an NA of 0.90 was used. The 532 nm frequency-doubled Nd:YAG excitation laser was used with the laser power on the sample set about 1 mW. 1800 lines/mm grating was used for Raman measurement. All the Raman spectra are original data with only background subtraction, and we performed the measurement under the same alignment/orientation each time. III. X-ray photoelectron spectroscopy (XPS) and surface coverage estimation The surface chemical analysis was carried out via a Thermo Scientific K-Alpha X-ray XPS using a monochromated Al-Kα X-ray source (hν = 1486.6 eV). Each data point in the time-evolved oxidation measurement was done by opening the pump lid and letting the sample be exposed to ambient air for a certain amount of time, and then re-pumping the chamber and doing the measurement. XPS spectra of a HA-BP as coated, after 2 days, and after 46 days are shown in Fig. 2F, and the spectrum is deconvoluted by two P 2p main peaks (centered at 129.68 eV and 130.68 eV), and three oxidized phosphorous peaks (centered at 131.48 eV, 132.46 eV, and 134.08 eV).[4] The phosphorous percentage is calculated by analyzing the composition of these peaks, and fitted by an exponential growth curve in Fig. 2G. The curve has the form 𝜂=𝐴−𝐵(1−𝑒)+), where η According to the fitting curves of BP and HA-BP in Fig. 2G, we find that 𝜏./)01~32𝜏01. From is the percentage of oxidized phosphorous, A and B are fitting parameters, and τ is the time constant. the diagram, the whole curve of HA-BP clearly cannot be fitted by a single exponential function. A second curve starting at the ~100 hours with a much larger time constant is shown, and this could be ascribed to the saturation of the passivation layer, where the passivation layer itself could drastically slow down the further oxidation process. However, it is seen that after 48 hours, the oxidation of HA-BP clearly slows down, which is fitted by the dashed curve. This slow-down may be due to the saturation of surface oxidation of phosphorous and the phosphorous oxide forms a passivation layer that further protects the phosphorous beneath. According the fitting curves of BP and HA-BP, we find that 𝜏./)01~32𝜏01(<50ℎ) at the starting period and 𝜏./)01~238𝜏01 (> 11 50ℎ) . The change of tunneling rate of oxygen should follow an Arrhenius relation as exp (−∆𝐸/𝑘0𝑇)<1/32, thus ΔE > 0.09 eV, which indicates that the coverage should be above 66.7% (whose tunneling barrier is 0 eV for O2) by combining the calculated results in the work. IV. Atomic force microscopy (AFM) For BP measurement, tapping mode atomic force microscopy is done using a Nanosurf Flex- Axiom AFM enclosed in a glove box with an inert environment containing <0.1 ppm O2 and <0.1 ppm H2O to avoid corrosion. For WSe2 measurement, the measurements were performed on Dimensional Icon system (Bruker, USA) in tapping mode with ultrasharp probes (OMCL- AC160TS, Olympus, Japan). The resonance frequency and spring constant for the probes are about 285 kHz and 26N/m, respectively. The thickness and roughness were obtained by analyzing the AFM height image with Scanning Probe Image Processor software (Image Metrology Aps, Denmark). 12 3. First-principles calculation I. Calculation method details Calculations are performed using Vienna ab initio simulation package (VASP)[5] with the generalized gradient approximation of Perdew-Burke-Ernzerhof (PBE)[6] for the exchange- correlation potential and a projector augmented wave (PAW) method.[7] The DFT-D3 method[8] was adopted to account for the van der Waals interactions. Supercells containing a vacuum spacing larger than 15 Å were used to model the BP and WS2 surfaces. The kinetic energy cutoff for plane wave functions is set to 500 eV and the energy convergence threshold is set as 10-4 eV. The Monkhorst-Pack k-mesh[9] of 5×5×1 is employed to sample the irreducible Brillouin zone. The atoms were fully optimized and the maximum force on each atom is less than 0.01 eV/Å. Bader's charge analysis is done for analyzing the charge distribution after proton transfer.[10,11] For hexylamine-BP system, two BP bilayers were used for the model with the bottom bilayer was fixed during optimization (not shown in following figures); while for hexylamine-WS2 system, only a single layer of WS2 was included in the model. II. Adsorption energies of different configurations for hexylamine-BP system Fig. S2. Seven different configurations for direct adsorption of n- hexylamine on BP. For each configuration, the front view and side view are shown, and the adsorption energy is marked under each configuration. The largest adsorption energy is only 0.33 eV. 13 two special Fig. S3. (A and C) For direct adsorption of n- hexylamine on BP, initial configurations have been tested, in which n- hexylamines are chemically bonded with BP. (B and D) After optimization, n-hexylamines in these two configurations have been repelled by BP, indicating that direct chemical bonding between n-hexylamines and BP is not possible. Fig. S4. Four different configurations for adsorption of n-hexylamine on oxidized BP. The largest adsorption energy is 0.419 eV, indicating that oxidization of BP can enhance adsorption between BP and n-hexylamine. Fig. S5. (A) The lowest energy configuration for adsorption of H2O on oxidized BP. (B) The lowest energy configuration for adsorption between n-hexylamine and H2O. (C) The lowest energy configuration for H2O-mediated adsorption, where the adsorption energy consists of the two binding energies between H2O molecule and oxidized BP and between H2O and n-hexylamine. 14 III. Surface coverage for hexylamine-BP system Fig. S6. The models of (A) 25% coverage (binding energy 1.07 eV/n-hexylamine), (B) 50% coverage (binding energy 1.2 eV/n-hexylamine), (C) 66.7% coverage (binding energy 1.18 eV/n- hexylamine), and (D) 100% coverage (binding energy 0.58 eV/n-hexylamine), used for calculating the penetration energy barrier of H2O molecules and O2 molecules. Note that in 100% coverage, the footprint of n-hexylamine molecules completely covers the BP, so that no denser coverage could be further achieved. The first row are top views and the bottom row are side views of corresponding configurations. 15 IV. Energy barrier calculations during kinetic transport for hexylamine-BP system Fig. S7. The structures of HA-BP used for calculating H2O and O2 molecules penetrating through the n-hexylamine coating. For each coverage and penetrating molecule type, three different locations are shown (far, middle, and close to the BP surface respectively), and each location is shown in two perspectives which are top view and side view. The distance d is defined in the first two figures of H2O and O2 in 25% coverage. 16 4. Photodetector device I. BP photodetector fabrication First, the pattern with Ti(15 nm)/Au(150 nm) for marking was fabricated onto SiO2(190 nm)/Si substrate by photolithography. These Ti/Au patterns help to locate the BP flakes that will be exfoliated onto the SiO2/Si substrate subsequently. Before BP exfoliation, the SiO2/Si substrate was annealed/dried in air for 30 minutes at > 200oC to remove humidity from air and then transferred into a glove box. Exfoliation of BP flakes onto SiO2/Si was performed in the glove box. After exfoliation, the metallic electrode pads of Ti(15 nm)/Au(200 nm), fabricated onto BP flakes sitting on SiO2/Si substrate were defined by electron-beam lithography (EBL) using PMMA as the resist mask, where the active channel width and length are kept comparable for both n-hexylamine- protected and the control BP detectors. After liftoff of PMMA, the BP photodetector fabrication was completed for the BP control sample. To prepare the n-hexylamine-protected BP detector, the amine molecules were coated onto BP devices with the aforementioned method prior to characterization. II. Channel BP thickness measurement with AFM Fig. S8. Height profile for the channel of BP flakes in pure BP control device with a thickness of 74 nm (upper panel) and HA-BP device with a thickness of 55 nm (lower panel). The particles on the HA-BP device are residues from H2O2 solution after treatment of the device with H2O2 etchant. The dimension of two AFM topographic images is 5µm´5µm. the 17 Fig. S9. Schematic of the photodetector measurement setup. III. Measurement setup for characterizing black phosphorus photodetectors Figure S9 shows a schematic diagram of the system setup. An all-fiber system was used to deliver probing light to the photodetector. Light from a 1550 nm tunable external cavity laser was coupled into an optical fiber and amplified by an Erbium Doped Fiber Amplifier (EDFA, Amonics). The EDFA output was split into two beams: 30% of the light was monitored by an optical power meter (Newport 1918A) to record the light intensity in real-time during the experiment. 70% of the light passed through a fiber with a cleaved facet and incident upon the black phosphorus photodetector at a fixed incident angle of 15 degrees. Due to the highly anisotropic optical and electrical properties of black phosphorus, an inline polarization controller was used to adjust the polarization of light to maximize the photocurrent. A source meter (Keithley SMU2450) was used to measure the photocurrent generated by the photodetector at zero bias while laser was working on continuous wave mode. To assess the photoresponsivity under bias condition, the laser light was modulated at 30 kHz and a trans-impedance amplifier (SRS SR570) was used to apply the bias. The amplified photocurrent was recorded using a lock-in amplifier (SRS SR844). We use finite-difference time-domain (FDTD) simulations to quantify the optical power absorbed by the photodetector, shown in Figure S19. The laser light from the fiber facet is modeled as a Gaussian beam with a beam waist of about 5.5 µm according to our simulations. A power monitor was used 18 to evaluate the power flux passing though the photodetector. The model indicates that 23% of light exiting from the fiber was captured within the active area of the photodetector. Detector responsivity was calculated by normalizing the measured photocurrent by the incident optical power on the photodetector. Fig. S10. (A) yellow rectangle showed the relative position between the active region of a 5 µm by 3 µm size photodetector and the center of incident laser light at optimized coupling condition. (B) electromagnetic field distribution on the photodetector. IV. Photothermoelectric photocurrent generation in BP photodetectors We experimentally investigated the photocurrent generation mechanism in the BP detectors by mapping the photocurrent as a function of the incident beam location. As shown in Figure S14A, the fiber light source, mounted on a linear translational motion stage, was traversed across the detector active area while the photocurrent was monitored. Figure S11B and 11C plot the measurement results obtained on black phosphorus detectors with and without inhibitor protection, respectively. In both types of devices, photocurrent reaches maximum when the illumination spot is close to the metal junctions and passes through zero close to the center of the device. This behavior is an unequivocal signature of photothermoelectric response.[12,13] 19 Fig. S11. (A) Illustration of photocurrent scanning set-up and photocurrent generation cross- section along the BP photodetector (B) with and (C) without n-hexylamine coating at zero bias condition. 20 5. Removability testing I. n-alkylamine/BP Fig. S12. Removability of n-hexylamine coating on BP by organic acid. First row, the fresh BP as a starting point, is etched by H2O2 solution (30 wt% in H2O). After coating n-hexylamine on fresh BP, HA-BP is resistant to H2O2 etching, as shown in the second row. In the third row, the HA-BP sample is treated with acetone for 20 mins, but still resistant to H2O2 etching; while by applying glacial acetic acid or acetone/HCl (acetone : HCl (37 wt% in H2O) = 1:1 in volume ratio) solution on the HA-BP for 20 mins at room temperature, the n-hexylamine coating is removed, and the BP can be again etched by H2O2 solution, as shown in the last row. Red arrow indicates the coating process, and blue arrow the uncoating process. The scale bars are 10 μm. 21 Fig. S13. Removable n-octylamine coating on BP. First row, the BP has been coated with octylamine and dipping inside hydrogen peroxide without etching demonstrates its successful coating. Bottom row, the coating is removed in glacial acetic acid to refresh BP surface, and then the BP is easily etched by hydrogen peroxide. The scale bars are 20 µm. 22 II. n-hexylamine/WSe2 Fig. S14. Removable n-hexylamine coating on WSe2. A, The AFM images of the same WSe2 flake at three stages: as- exfoliated (marked as "fresh", blue color- coded), after coating (marked as "coated", scarlet color-coded), and after removing the coating (marked as "uncoated", golden color-coded). B, The AFM characterization of the thickness of the same WSe2 flake during three stages, with the locations of height profile marked by solid lines in A (Note: the same color-coding scheme was used in a-c for convenient comparison). C, The one-dimensional surface roughness from this WSe2 flake during the three stages. The roughness is measured at the same location marked by white dashed line in the inset. The scale bars are 2 μm in B and C. As the example for transition metal dichalcogenides (TMDs), WSe2 was used to carry out a thorough removability testing by monitoring the same WSe2 flake's height, roughness and Raman characteristics during the three steps in treating the flake -- fresh uncoated, n-hexylamine coated, and coating removed (fig. S14). WSe2 flakes were exfoliated on SiO2/Si substrate by mechanically exfoliation. The thickness of WSe2 flakes were measured by AFM at different states (before coating hexylamine, after coating hexylamine and after removing hexylamine). To coat hexylamine, the samples were immersed in hexylamine solvent, and heat to 130 oC for 20 min. Then the sample was washed in hexane, and dry by nitrogen. To remove the hexylamine, the samples were immersed in warm acetic acid (about 50 oC) for one hour. 23 As shown in fig. S14c, the surface roughness of the flake is totally restored after removing the coating, and the coated n-hexylamine layer is 1.5 nm thick. Raman signal does not change before coating and after coating removed fig. S15. Note here, the contribution in Raman from the ultra- thin coated n-hexylamine layer is not observable, and hence no obvious change in Raman before and after coating for flake. However, the more significant information from Raman is that the flake property was retained from coating till coating removed, thus further consistently demonstrating our developed alkylamine monolayer coating is strong but removable. Fig. S15. Raman properties from WSe2 during removable testing. Raman spectra taken at the same location during the three steps of removability test on n-hexylamine coating on the same WSe2. 24 6. Protection techniques comparison Table S4. Comparison between existing protection techniques. Factors such as coating layer thickness, resistive property, and techniques used are compared. Thickness Passivation against: Susceptible to: Fabrication method Limitations n- hexylamine (linear alkylamine family) ~1.5 nm Ambient air, H2O2, organic solvent, bases, H2 annealing (³250 oC) Organic acids Solvothermal treatment Size of container AlOx 2-30 nm Ambient air, organic solvent Acids, bases, H2 annealing Atomic layer deposition PMMA ~100 nm Ambient air Organic solvent, H2 annealing Spin coating Graphene/h BN ~4 Å Ambient air, organic solvent, acids, bases, H2 annealing Parylene 30-300 nm Ambient air Aryl diazonium Molecular scale (non specific) Ambient air Octadecyltr ichlorosilan e Monolayer Ambient air - - - - 25 2D materials transfer method Thermal evaporation Wet chemistry Wet chemistry Scaling limited by vacuum, chamber size and processing throughput Limited spatial resolution in patterning, too thick for spacer in 2D vertical heterostructures Scaling limited by graphene/hBN area and transfer technique, non- removable Scale limited by vacuum, chamber size; processing throughput, non- removable Non-removable Limited processing throughput due to its toxicity, non- removable References 1. 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A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu. J. Chem. Phys. 132, (2010). Pack, J. D. & Monkhorst, H. J. 'special points for Brillouin-zone integrations'-a reply. Phys. Rev. B 16, 1748 -- 1749 (1977). 10. Tang, W., Sanville, E. & Henkelman, G. A grid-based Bader analysis algorithm without lattice bias. J. Phys. Condens. Matter 21, 84204 (2009). 11. Yu, M. & Trinkle, D. R. Accurate and efficient algorithm for Bader charge integration. J. Chem. Phys. 134, 0 -- 8 (2011). 12. Low, T., Engel, M., Steiner, M. & Avouris, P. Origin of photoresponse in black phosphorus phototransistors. Phys. Rev. B - Condens. Matter Mater. Phys. 90, 1 -- 5 (2014). 13. Yuan, H. et al. Polarization-sensitive broadband photodetector using a black phosphorus vertical p-n junction. Nat. Nanotechnol. 10, 1 -- 8 (2015). 26
1810.06426	1	1810	2018-09-23T21:45:38	Reliability Study of Power Harvesting System from Sea Waves with Piezoelectric Patches	[ "physics.app-ph", "physics.data-an" ]	Conversion of sea waves mechanical energies into the electrical form of energy by means of piezoelectric materials is considered as one of the most recent methods for powering low-power electronic devices at sea. In this paper, power harvesting from sea waves by consideration of JONSWAP wave theory is investigated and the uncertainties of sea waves are studied for the first time. For this purpose, a vertical beam fixed to the seabed which the piezoelectric patches are attached to it, is considered as energy harvester and is modeled and simulated by MATLAB software. The generated power is computed by calculating the beam vibration response and the effect of piezoelectric patches on the generated power is studied by statistical analysis. Furthermore, reliability of the energy harvesting system is investigated as the possibility of failure based on violation criteria. It is resulted that the probability of failure increases by increasing the power.	physics.app-ph	physics	Reliability Study of Power Harvesting System from Sea Waves with Piezoelectric Patches Hadi Mirab1, Vahid Jahangiri2*, Mir Mohammad Ettefagh1, Reza Fathi1 1 Dept. of Mechanical Engineering, University of Tabriz, Tabriz, Iran. 2 Dept. of Civil Engineering, Louisiana State University, Baton Rouge, USA. [email protected] Abstract Conversion of sea waves mechanical energies into electrical form of energy by means of piezoelectric materials is considered as one of the most recent methods for powering low-power electronic devices at sea. In this paper, power harvesting from sea waves by consideration of JONSWAP wave theory is investigated and the uncertainties of sea waves are studied for the first time. For this purpose, a vertical beam fixed to the seabed which the piezoelectric patches are attached to it, is considered as energy harvester and is modeled and simulated by MATLAB software. The generated power is computed by calculating the beam vibration response and the effect of piezoelectric patches on the generated power is studied by statistical analysis. Furthermore, reliability of the energy harvesting system is investigated as the possibility of failure based on violation criteria. It is resulted that the probability of failure increases by increasing the power. Keywords: Reliability Study; Energy Harvesting; Piezoelectric Materials 1. Introduction Implementation of wireless communication and low-power electricity sensors provide rich information for different industries such as alarming devices, structural health monitoring and marine industry. The low power electric devices can be used as energy supplies for wireless sensors, instead of batteries which have disadvantages in comparison with the low power electric devices. The increasing demand of wireless communication devices in various industries has led researchers to investigate on converting ambient vibration into electrical energy by implementing piezoelectric, electromagnetic and electrostatic material. However, utilizing piezoelectric material has been taken into consideration more than the other materials due to the benefits of these kinds of materials . Harvesting energy by using piezoelectric converters has been a subject of many types of researches. Anton and Sodano [1] -- [3] reviewed recent literature in the field of energy harvesting. Smits et al. [4], [5] derived the constituent equations of a heterogeneous piezoelectric bender under different boundary conditions, where these boundary conditions consists a mechanical moment at the end, a force which is applied to the tip, and a uniform load which is applied over the entire length of the bender. They also discussed the electromechanical characteristics of the mentioned bender. Zhang and Lin [6] summarized and illustrated the behavior of several types of ocean wave energy converters using piezoelectric materials. They also designed a novel wave energy converter by implementation of piezoelectric material. Tanaka et al. [7] discussed forced vibration experiments on flexible piezoelectric devices which operates in both air and water environments. They also manufactured and tested several devices in different operating conditions. Finally, they compared the experimental and simulation results. Viet et al. [8] developed a floating kind of energy harvester system using the piezoelectric materials to scavenge the energy from the motion of waves. They concluded that the harvested power increases by an increase in the ocean wave amplitude and a decrease in the ocean wave period. Taylor et al. [9] designed a device made of a flexible polyvinylidene fluoride, which converts the mechanical flow energy, available in rivers to electrical power. Wu et al. [10] developed a more efficient energy harvesting method by piezoelectric materials. They also proposed a numerical model to compute the generated electrical power. It was resulted that higher electrical power can be achieved when the harvester has a thinner and longer floater. Zurkinden et al. [11] designed some similar wave energy converter devices from piezoelectric material, which are subjected to the wave force at a characteristic wave frequency to scavenge energy from the ocean surface waves. Xie et al. [12] designed a piezoelectric coupled plate structures fixed on the seabed and a base structure in the case of harvesting the ocean wave energy. It was shown that the produced electrical energy increases by increasing the length of cantilevers and the wave height and by decreasing the distance of the ocean surface to the cantilevers. One of the most recent researches on energy harvesting from sea waves is done by Wang et al. [13]. They studied the effect of energy harvester system and wave parameters on generated electrical power produced from piezoelectric energy harvester system according to the Airy linear wave theory. Mirab et al. [14] studied energy harvesting system with considering both JONSWAP and Airy wave theory. Moreover, annealing algorithm was used to optimize the parameters of energy harvesting system. In this paper, an energy harvesting system is subjected to sea wave which is modeled by accurate JONSWAP random wave theory. Unlike the Airy wave theory, JONSWAP wave model contains random features of sea waves. For this purpose, an energy harvester which is jointed to the seabed according to irregular JONSWAP wave model is considered. The random phenomenon is made because of irregularities which can be created due to uncertainties in characteristics of the system or force excitations. It should be noted that the present study focuses on both randomnesses of the system excitations and uncertainties in generated electrical power. After modeling and simulating the system in MATLAB, the exact vibration response of the beam is derived by numerical methods. By knowing the displacements of the beam, the generated power is calculated and the effects of uncertainties related to the piezoelectric patches on the generated power are investigated. In addition, statistical analysis and probability of failure are studied. Finally, it was shown that the probability of failure increases by increasing the power. 2. Modeling of energy harvester system by considering JONSWAP wave theory In this section, the energy harvesting system is modeled and its equations of motion are derived. In addition, JONSWAP wave theory is explained and defined. Finally, the generated electrical power is calculated. 2.1. Vibration equation of beam under excitation of sea waves A cantilever beam with length of , and piezoelectric patches that are attached to the beam, is the most current device in scavenging energy from vibration energy which is shown in Fig. 1. The beam is fixed to the seabed in depth of , and the beam starts to vibrate when it is subjected to sea waves and this causes dynamical strain in piezoelectric layers which produces electrical power. Transverse motion of beam can be expressed as Eq. (1): (1) Where is the mass per unit length of the beam at each position of , and are the bending rigidity and cross section area of the beam respectively, is the density, is the longitudinal displacement of the beam at position and is the force resulted from sea waves. ld422422(,)(,)(,)(,)HwztwztwztEImgAftzzztmzEIA(,)wztz(,)HftzFig.1 Set up of the piezoelectric energy harvester (11) The horizontal wave force is determined from Morison equation as follows [15]: (2) where , and are the coefficient of the drag and inertia forces of the beam and the added mass respectively, is the material density of the beam, and are the thickness and width of beam respectively. Also, and are the longitudinal velocity and acceleration of the water particles in the sea respectively. In this paper, in order to determine velocity and acceleration presented in Morrison equation, JONSWAP irregular wave model is considered where it can be defined in [16]. 2.2. Derivation of vibrational response By having the value of the energy harvester force, result of Eq. (1) can be calculated by applying mode summation and variable separation method as follows: 221(,)2HDwxxMwxmwwwwftzcbuucbhacbhtttDcMcmcwhbxuxa (3) where , is the shape mode function and is the response in the time domain. Mode function for transverse vibration of the beam is expressed as: (4) where are determined from Eq. (5). The boundary conditions are introduced as: displacement and rotation are zero at the fixed point. Also, bending moment of the beam is zero at the free point. In addition, the shear force of the beam is equal to inertial force of the point mass. According to these boundary conditions coefficients are calculated. (5) 2.3. Response in time domain In the case of deriving responses in time domain, response of the beam is expanded according to Eq. (3) and also mode shape orthogonality is used. Response in the time domain and vibration response of energy harvester are calculated by solving these equations numerically. By substituting Eq .(3) in Eq. (1), the new equation will be as follows: (6) By multiplying two sides of Eq. (6) in or by integrating over the length of the beam from -- d to 0, Eq. (7) is derived as follows: (7) By expanding the latest equation, Eq .(8) is determined: (8) where is mass matrix, is the stiffness matrix, is generalized force, is generalized coordinate and is second derivative of generalized coordinate whereas the elements of these matrices are shown in Eq. (9) to Eq. (11) respectively. 31(,)()q(t)iiiwztWz()iWz()iqt11213242()coshsinhcossiniWzcszcszcszcsz1,2s1,2,3,4c2231,22()24()mgkAmgsEIEIEI413111()()()()()()(,)NNNiiiiiiHiiiEIWzqtMgWzqtkAWzqtftz()jWz000(4)''111110031()()()()()()()()()()()(,)()NNNiiiiijiiiidddNijiHjiddEIWzdzqtMgWzdzqtMgWzWzdzqtkAWzWzdzqtftzWzdz[]{()}[]{()}{}MqtKqtQ[]M[]K{}Q{()}qt{()}qt (9) (10) (11) In order to solve Eq. (8), by using state space, Eq. (12) will be as follows: (12) By substituting Eq. (12) in Eq. (8) and by converting the equations to matrix form, Eq. (13) is calculated as follows: (13) After some algebraic operations, Eq. (13) is changed to a standard form as follows: (14) It can be seen that, the latest equation is in the form of and it is suitable for solving the equations numerically by Runge-Kutta method. 2.4. Calculation of general electrical power By knowing the displacement function of the beam which is affected by the wave force, the electrical voltage and charge which are generated by piezoelectric patches in time t, is described as Eqs. (24) and (25) [17]: (15) (16) where , , , and are piezoelectric coefficient, thickness, electrical capacity per unit weight, length and number of the peizoelectric patches respectively. The generated output power in time , can be defined as: 03()()()ijijdMkAWzWzdz00(4)''1()()()()ijjijiddKEIWzWzdzMgWzWzdz0(,)()iHidQftzWzdz1212{}{}{}{}{}{}yqyyyq1122{}{}[][0][0][]{}{}{}[0][]-[][0]{0}yyMKQyyII11122{}{}[][0][0][]{}{}{}[0][]-[][0]{0}yyMKQyyII(,)yfty(.)((1131).)(,)(,)()2zdppazdppappghhwztwztQzzteb131(.)((1).)()(,)(,)()2zdppazdppappgppgvvzzQthhwztwztVtecc31e1hvca1'NppNt (17) In addition, the average value of output power is calculated from Eq. (18), where T is the total time. (18) 3. Statistical analysis In this section, the confidence interval which is used to calculate the error boundaries of intervals and the reliability and violation criteria are studied. 3.1. Confidence interval In order to estimate the error boundaries of intervals including the actual values of the population parameter, the confidence interval is used [16]. For this purpose, it is considered that X1, X2, ..., Xn are the random samples and is assumed to be an unknown parameter. Interval (L,U) is the confidence interval for and is calculated by considering X1, X2, ..., Xn before sampling. The mentioned interval includes an unknown actual value of with a certain probability. This probability is shown as "1 -- α" which is equal to 0.9. 0.95 or 0.99 most of the time. In other words, "1 -- α" is considered as a certain probability. Additionally, L and U are assumed as functions of X1, X2, ..., Xn, value of 1- α is obtained as follows: (19) (L, U) is the confidence interval of the coefficient 100% (1 -- α), whereas (1 -- α) is the confidence level of the population parameter. In order to clarify these concepts, confidence interval for the mean of data is considered when the sample size is large and the standard derivation is known. In next part, is assumed to be unknown and this will result a more realistic formulation of the problem. Basis for description and expansion of confidence intervals is provided by possible form for the mean value of the sample (X) which is based on the normal distribution. According to the central limit theorem, the distribution of the can be considered as ,in which, has a defined value. This distribution is a good approximation for a large sampling of the non-normal populations. But, whenever the population distribution is normal, the mentioned distribution holds for all values of q. Therefore, possible forms for the 1()()()ppNgppgppdQtPetVtdt201()TrmsPePetdtT1PLUX(,)Nqqnon-normal and normal populations are confirmed approximately and precisely, respectively. Generally, when q has large value and the parameter is defined, interval confidence of 100% (1- α) for is obtained as: (20) where is the area of the right side of the standard normal distribution which is equal to . The mentioned quantities can be obtained from statistical table in [16]. 3.2. The confidence interval based on large sample of µ and unknown value of σ In the latest section, the basic concepts of confidence interval were defined and now, more realistic condition is considered in this section. In which, the standard deviation of the population is considered to be unknown. When the sample size of is large, the Eq. (20) is still correct. But, the interval cannot be acquired from the sample data since is an unknown parameter in this section. Thus, it cannot be used as a confidence interval. Replacing by its estimator (S) will not have a significant effect on the possible form of the Eq. (20), since q is assumed to be large. Totally, when q is large and standard deviation of the population is unknown, confidence interval of 100% (1- α) for can be acquired as: (21) where, S is the standard deviation of the sample. The main assumption for population distribution is that the σ has a predefined value. 3.3. Reliability and violation criteria In this section, reliability of the system is studied. Reliability investigates the probability of failure based on the limit state function. It should be noted that, reliability is not limited to calculation of failure probability. Investigating properties of various statistical data such as: probability distribution functions and interval confidence are important in studying reliability. When a structure operates more than the expected limitation, the structure will lose the desirable function. The expected limitation is limit-state function. Therefore, system is considered in non- reliable condition, whenever there is probability of failure and violation from the limit-state. In other words, violation from a limitation for the system is considered as failure of the system. Limit-state is divided to two types [18]: 1- Failure of the structure /2/2(,)XZXZqq/2Z/2/2/2(,)SSXZXZqq2- Disorder in normal operation Generally, limit state reveals safety margin between load and strength. Equation related to limit state function and probability of failure are obtained as follows: (22) (23) where R is the strength of the structure and S is the load which is applied to the system. For a specific case, in which, R and S are normally distributed and are uncorrelated, limit state function will have normal distribution. Probability of failure is obtained by Eq. (24) as follows: where M is distributed normally and the mean value for this parameter is (24) and standard deviation is . Probability of failure is acquired by normal distribution function as follows: (25) where is the safety index and is standard cumulative distribution function. Geometric description of the safety index is demonstrated in Fig.2. Shaded area of this figure shows the probability failure. Fig. 2 probability density for limit state 4. Simulation and results Properties of the beam and characteristics of the waves which are used in simulation are summarized in Tables 1 and 2 respectively. By considering these properties, equations of the energy harvester system are solved by programming in Matlab and so, vibration response is determined. Subsequently, the output power produced from energy harvester is calculated. MRS()fPPRS(0)(0)PRSPMMRS22MRS()()MfMPMMTable.1 properties of the beam Parameter name Symbol Value beam length inertial coefficient of beam drag coefficient of beam Inertial coefficient of added mass Density of beam Young module of beam Electrical capacity of patches Piezoelectric constant 3 1.7 0.8 1 7500 78 0.75 -2.8 Table.2 properties of sea Parameter name Symbol Value Sea depth Significant wave height Spectral peak period 3 2 15 Sea water density 1025 By considering which is assumed to derive the maximum frequency of the system according to Nyquist theory . Number of discrete time data, , and significant wave height , the JONSWAP wave shape is illustrated in Fig.3. (m)LMcDcmc2kgm()(GPa)E(nF)vc2c31m()e(m)d(m)H(s)T2(kgm)wmax63.52fHzmax12tfTNt2sHmFig. 3 Irregular JONSWAP wave elevation JONSWAP wave shape spectrum is compared with the one, which is obtained by Fourier transform of the signal, and is illustrated in Fig.4. It can be seen that, dominant frequency ( ) is visible in both situations. Fig. 4 Comparison of JONSWAP wave spectrum with Fourier transform of JONSWAP wave elevation Generated electrical power of the energy scavenging system by consideration of JONSWAP wave theory has not been studied yet. Therefore, in order to evaluate the system, dominant frequency of the system can be obtained by substituting N=3812 and Hs=2m in . So the dominant frequency will be equal to 0.14Hz and it is compared to the one which is obtained by vibrational frequency response. Additionally, vibrational response of the beam in time domain is determined and subsequently by Fourier transformation of the response in time 1.25682peaksfH1.25682peaksfHdomain, the vibrational response in frequency domain is obtained. The responses in time and frequency domains are shown in Figs 5 and 6 respectively. Fig. 5 Free end displacement of energy scavenging system Fig. 6 Fourier transform of free end displacement of energy scavenging system As it can be seen from Fig.6, the appeared frequencies are equal to wave frequency and natural frequencies of the energy scavenging system. It should be noted that, natural frequencies of the system which are the roots of the character equation, is equal to 2.03, 20.35 and 63.52 Hz. It can be seen from Fig.6, natural frequencies of the beam and JONSWAP wave frequency is near to these values and this proves that the simulation of the system by consideration of JONSWAP wave theory is evaluated. Now, uncertainties in length and thickness of piezoelectric patches with a nominal value of 0.1 and 0.001 meters are considered. Upper and lower limit of these parameters are assumed to be of the nominal value. Moreover, uncertainties are applied to the system by uniform distribution. Then, the RMS generated power as a function of beam and wave properties with consideration of JONSWAP wave theory is illustrated in Figs. 7 to 15. Furthermore, the average value of upper and lower limit of each figure is represented in Table 3. Fig. 7 Generated electrical power versus significant wave height by consideration of uncertainty in length and thickness of patches Fig. 8 Generated electrical power versus significant wave height by consideration of uncertainty only in length of patches 5%Fig. 9 Generated electrical power versus significant wave height by consideration of uncertainty only in thickness of patches Fig. 10 Generated electrical power versus width to thickness of the beam by consideration of uncertainty in length and thickness of patches Fig. 11 Generated electrical power versus width to thickness of the beam by consideration of uncertainty only in length Fig. 12 Generated electrical power versus width to thickness of the beam by consideration of uncertainty only in thickness of patches Fig. 13 Generated electrical power versus sea depth by consideration of uncertainty in length and thickness of patches Fig. 14 Generated electrical power versus sea depth by consideration of uncertainty only in length of patches Fig. 15 Generated electrical power versus sea depth by consideration of uncertainty only in thickness of patches Table.3 the average value of upper and lower limit Figure Uncertainty in length and Uncertainty only in thickness of patches length of patches Uncertainty only in thickness of patches Generated power vs. significant wave height Generated power vs. width to thickness of the beam Generated power vs. sea depth 1.6358 0.7143 0.6052 1.7082 0.0190 0.7313 0.0072 0.5967 0.0062 Generated electrical power versus significant wave height for upper limit, lower limit and for mean value is illustrated in Figs. 7 to 9. As it can be seen from these figures, by increasing the significant wave height, the generated electrical power increases as expected. Moreover, Figs 10 to 12 demonstrates the generated electrical power versus width to thickness of the beam for upper limit, lower limit and mean value. As it can be realized from these figures, increasing the width of the beam results growth in generated electrical power. Also, the mentioned electrical power versus sea depth which is considered equal to length of beam, for upper limit, lower limit and for mean value is illustrated in Figs. 13 to 15. It can be noticed that, by increasing the length of the beam, bending moment resulted from sea waves increases and consequently the generated electrical power increases. According to Table.3, generated electrical power is less sensitive to thickness of the patches in comparison with the patches length. When there is uncertainty only in thickness of the patches, upper limit, lower limit and mean value are more coincident. Though, whenever there is uncertainty in length and thickness of the patches simultaneously or only in length of the patches, the distances between the mentioned values are more. In other words, the generated electrical power is more sensitive to length of the patches. It can also be seen from these figures, augmentation of generated electrical power, and results incensement in uncertainties. According to the direct relationship between generated electrical power and generated voltage from piezoelectric patches, the violation criteria is considered such that, if the average value of generated electrical power is more than half of the maximum power in each run, failure is occurred. In addition, the percentage of probability of failure which is resulted by illegal voltage, versus significant wave height, width to thickness of the beam and sea depth is studied and illustrated in Figs. 16 to 18. It can be noticed that, whenever the generated power increases, the probability of failure increases. Fig.16 Probability of failure versus significant wave height Fig. 17 Probability of failure versus width to thickness of the beam Fig. 18 Probability of failure versus sea depth 5. Conclusion Conversion of mechanical energies of sea waves into electrical energy by means of piezoelectric materials is considered as one of the most recent methods for powering low-power electronic devices at sea. The implemented energy harvesters are vibrated due to sea waves and as a result of vibration, dynamical strain is produced in the system and subsequently electrical power is generated. In this paper, simulation of energy harvesting system which is subjected to JONSWAP wave theory is investigated and the generated power is studied. Numerical methods are used for deriving the vibrational response. In the case of evaluating the modeling of the system, Fourier transform method is used and the resulted frequencies are compared with the natural frequencies which are determined by roots of the character equation and also with the wave frequency. After modeling the system and determining the equations, generated electrical power value for various parameters of the beam and sea is studied and also by consideration of uncertainties in length and thickness of piezoelectric patches, the mentioned value is investigated. In addition, lower limit, upper limit and mean value of the generated electrical power is defined. It is concluded that, increasing the significant wave height, width and length of the beam results an increase in the generated electrical power. Also, it is shown that, the generated electrical power is less sensitive to thickness of the patches. Furthermore, probability of failure is studied and it is noticed that, by increasing the power, the probability of failure increases. References [1] B. S. Joyce, J. Farmer, and D. J. Inman, "Electromagnetic energy harvester for monitoring wind turbine blades," Wind Energy, vol. 17, no. 6, pp. 869 -- 876, Jun. 2014. [2] V. Jahangiri, H. Mirab, R. Fathi, and M. M. Ettefagh, "TLP structural health monitoring based on vibration signal of energy harvesting system," Lat. Am. J. Solids Struct., vol. 13, no. 5, 2016. [3] D.-W. Lim, S. C. Mantell, and P. J. Seiler, "Wireless Structural Health Monitoring of Wind Turbine Blades Using an Energy Harvester as a Sensor." [4] M. C. Hamilton, "Recent advances in energy harvesting technology and techniques," in IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society, 2012, pp. 6297 -- 6304. [5] H. S. Kim, J.-H. Kim, and J. 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Wang, "Energy harvesting from ocean waves by a floating energy harvester," Energy, vol. 112, pp. 1219 -- 1226, 2016. [11] G. W. Taylor, J. R. Burns, S. A. Kammann, W. B. Powers, and T. R. Welsh, "The Energy Harvesting Eel: a small subsurface ocean/river power generator," IEEE J. Ocean. Eng., vol. 26, no. 4, pp. 539 -- 547, 2001. [12] N. Wu, Q. Wang, and X. Xie, "Ocean wave energy harvesting with a piezoelectric coupled buoy structure," Appl. Ocean Res., vol. 50, pp. 110 -- 118, 2015. [13] A. S. Zurkinden, F. Campanile, and L. Martinelli, "Wave Energy Converter through Piezoelectric Polymers." [14] X. D. Xie, Q. Wang, and N. Wu, "Energy harvesting from transverse ocean waves by a piezoelectric plate," Int. J. Eng. Sci., vol. 81, pp. 41 -- 48, 2014. [15] X. D. Xie, Q. Wang, and N. Wu, "Potential of a piezoelectric energy harvester from sea waves," J. Sound Vib., vol. 333, no. 5, pp. 1421 -- 1429, 2014. [16] H. Mirab, R. Fathi, V. Jahangiri, and M. Ettefagh, "Energy harvesting from sea waves with consideration of airy and JONSWAP theory and optimization of energy harvester parameters," J. Mar., 2015. [17] J. R. Morison, J. W. Johnson, and S. A. Schaaf, "The Force Exerted by Surface Waves on Piles," J. Pet. Technol., vol. 2, no. 5, pp. 149 -- 154, May 1950. [18] C.-K. Lee and F. C. Moon, "Modal Sensors/Actuators," J. Appl. Mech., vol. 57, no. 2, p. 434, 1990.
1812.05230	1	1812	2018-12-13T02:14:41	Three-dimensional nanoprinting via charged aerosol focusing	[ "physics.app-ph" ]	A powerful and flexible method of 3D nano-printing, based on focusing charged aerosol, has been developed. The self-consistent electric field configuration, created with a holey floating mask and used as the scaffold for printing structures, has no restriction as to sizes down to nano-scale. The electric field line is used as a writing tool. Broad material independence opens the way for producing hybrid structures that are essential for electronic devices. The method contains three modes which are complementary: controlled tip-directed 3D-growth printing, the writing mode (that can also produce 3D structures in repeating passages), and the stencil mode that produces wall-like structures of various shapes. Manipulating them gives freedom to manufacture complex 3D designs that we report. The desired morphology of the grown structures is controlled according to a simple phenomenological theory that helps organize the 2D stage motion and the 3D printing process to compete with the 3D printing provided by laser techniques in polymer based material.	physics.app-ph	physics	Three-dimensional nanoprinting via charged aerosol focusing Wooik Jung1,2†, Yoon-ho Jung1,2†, Peter V. Pikhitsa1, Jooyeon Shin1,2, Kijoon Bang1, Jicheng Feng1 and Mansoo Choi1,2* 1Global Frontier Center for Multiscale Energy Systems, Seoul National University, Seoul 08826, Korea 2Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul 08826, Korea †These authors contributed equally on this work *To whom correspondence should be addressed. E-mail: [email protected] 1 Three-dimensional (3D) printing has attracted great attention due to the flexibility and practicality on 3D structuring for various applications. Many researches attempt to further scale down the 3D printing technique to take advantage of the unique optical, physical and chemical properties arising from 3D nanostructures for diverse applications including electronics (1, 2), energy device (3, 4), bioengineering (5-9) and sensing (10). Although various approaches have been developed such as DNA scaffold (11, 12), photo lithography (13, 14), electron-beam lithography (15, 16) and electrohydrodynamic (17-20) approaches, ensuring nanoscale resolution with high degree of freedom that is essential for further development towards the 3D nano-printing has been a challenge. Previously, we developed a 3D nanoparticle assembly technique named Ion- Assisted Aerosol Lithography (IAAL) (21-24). IAAL is an aerosol-based manufacturing process, which guides charged nanoparticles following a distorted electric field induced by aerodynamic focusing lenses generated from accumulated ions on an insulating patterned layer. IAAL has great advantages of fabricating versatile 3D nanostructures for different applications (25-27). Herein, we propose a novel 3D nano-printing concept for fabricating versatile 3D nanostructures that cannot be easily realized from existing methods. We apply a floating dielectric mask concept combined with 3D translation of piezoelectric nanostage to focus charged aerosols through convergent electrostatic field through apertures in the floating mask. Fine-tuning of the 3D translation speed and direction of the nanostage can determine the shape of the 3D nanostructures. Fundamental methodology and some of the results are presented in several conferences (28-30). Interestingly, we found two different regimes (3D growth mode and 3D writing mode) exist depending on the 2 translation velocity of the stage. In the 3D growth mode, the shape of structure is determined by adjusting the stage translation speed according to the growth rate of the structure. Adding the horizontal movement of the stage enables the manufacturing of slanted structures in various angles. Precise 3-axis stage controlling can lead to complex 3D nanostructures. Relatively faster movement of stage would lead to 3D writing mode, in which nanoparticles cannot be accumulated upon the existing cluster and the movement of the stage makes a line of particles. This means that the multiple sweeping with a same orbit makes the writing of 3D nanostructures. The general approach to produce a scaffold for the parallel structure growth in 3D is based on the floating dielectric mask with the array of holes (Fig. 1, A and B). The positively charged ions and aerosol nanoparticles created in a spark discharge (Fig. S2) are directed towards the mask and substrate by the electric field that controls the deposition process with the potential on the substrate. (Fig. S1 shows the experimental set-up.) The role of the electric field is very complex: positive ions trapped by the mask out of the flow create a positively charged cushion on the mask. The cushion is shaped by the electric field from the ion distribution on the mask hole array so that the resulting electric field is repelling for the aerosol nanoparticles everywhere over the mask except the hole regions where it produces narrow funnels (Fig. 1A and Fig. S3). The nanoparticle stream focused within the funnels is directed to a given position on the substrate, controlled by the nanostage position. When the stage does not move, the pillars are growing in the direction of their tip (normal to the substrate) with the equal height controlled by the deposition time (Fig. 1, C to E). The mask hole array controls the resulting pillar array (Fig. 1F and Fig. S5). By alternating the type of nanoparticles during 3 the deposition the pillars could be grown of complex material composition (see Fig. 1, G and H, for the pillar with upper half copper and lower half palladium.) The full capacity of the 3D printing method is revealed when the stage moves controllably during the deposition process. The complete control over the structure growth shape becomes possible due to the further focusing of the electric field lines in the funnel onto exclusively the tip of the growing structure. The tip follows the electric field line and thus the latter plays the role of a drawing tool. One may recall Faraday's first drawings of the electric field lines with a pensile. Here we are drawing a 3D pensile with the electric field line. Thus, a considerable simplification for designing various growing nanostructures in a 3D printing mode (see the simplest ones in Fig. 2B and Fig. S6) comes from the fact (supported by our numerical simulations (31) given in Fig. 2C) that the charged nanoparticles on average follow the electric field lines that pass through the mask hole (Fig. 2A) and end up on the tip of the growing structure. The tip, being the protruding element of the conductive surface of the agglomerate, collects coming nanoparticles because geometrically the concentration of electric field lines (normal to the agglomerate surface) increases near the tip (Fig. 2C). The guiding line is the one that passes through the central area of the mask hole, where nanoparticles are funneled by the local charge distribution of the focusing lens, and ends up on the tip (Fig. 2A). Here lies an important conceptual difference between our approach and Diffusion Limited Aggregation (DLA) or Laplacian growth. In our approach the nanoparticles are forced to strictly follow the approximately vertical electric field lines due to focusing electrostatic lenses of the mask holes above the growing conductive surface of agglomerates. These lenses are controlled by the fixed charge distribution of ions trapped 4 on the mask surface. Without these lenses the nanoparticles would perform the Brownian motion and stick to the growing agglomerate in the DLA manner, thus forming fractals. We indeed observe fractal-like growth when the focusing from the mask is not sufficient due to low concentration of deposited ions. It is because the only size restriction for stabilizing the DLA fractal growth is the size of the nanoparticles, while as we show, sufficient electrostatic focusing results in novel "persistence" length (cid:1838)(cid:3043). It is in the essence of our approach to put each electric field line (and thus the nanoparticle trajectory) to its place, determined by both the charge distribution on the silicon-nitride mask and the tip position. It is that lucky combination that turns the electric field line into a 3D writing tool. The above-said leads to a simple growth description, in which the growth pattern in 3D printing can be completely controlled by a 2D stage motion protocol. As one can see from the schematic in Fig. 2, A and C, it is a fair approximation to select as the guiding streamline the one of the electric field lines that starts at the center of the hole in the mask (the center is chosen due to the symmetry, provided the mask hole is far enough from the growing structure and the substrate) and ends on the tip of the growing structure. However, it is difficult to calculate general electric field configuration in 3D. Unlike 2D space where conformal properties of the complex plane give the possibility to use analytical methods and harmonic functions to calculate the potential and electric field lines (32), in 3D it is not generally possible. Still, for 3D printing one needs a sure control over the mask position and motion to draw a desired 3D structure with the electric field line. Below we show that phenomenology leads to a simple description of the field lines which is sufficient to control the 3D printing mode in creating rather complicated and counterintuitive structures (like the one in Fig. 2B). We believe that the stage being 5 equipped with such a control can compete with the methods that use laser beam 3D writing, yet without the restriction on nonconductive materials and by moving the stage in 2D only, while the structure grows in 3D. The geometry of the guiding electric field line in 3D can be calculated as follows. It is assumed that all electric field lines issue nearly normally from the mask surface (including the mask hole regions as far as the mask is sufficiently far from the growing structure) and bunch all together while focusing at the tip of the equipotential growing structure (Fig. 2C). The simplest phenomenological picture is obtained when solely the tip is considered as the point in 3D while neglecting the already growth structure and the substrate. Then it is easy to notice that the line bunching/focusing is governed by the electric field flux conservation equation (cid:2024)(cid:1844)(cid:2870)(cid:2026)(cid:3404) (cid:3044)(cid:2872)(cid:3095)(cid:1516) 2(cid:2024)sin(cid:2016)(cid:1856)(cid:2016) , where (cid:1844) is the distance from the tip to the mask hole center along (cid:1876) axis (Fig.2A); (cid:2016) is the angle between the normal/vertical (cid:1878) direction and the guiding line; (cid:2026) is the surface charge density on the mask, and (cid:1869) is the effective "charge" on the equipotential tip surface that (cid:3404)(cid:1869)(cid:2869)(cid:2879)(cid:2913)(cid:2925)(cid:2929)(cid:3087)(cid:2870) (cid:3087)(cid:2868) gives the phenomenological description of the line focusing on the tip. This leads to the (cid:1844)(cid:3404)(cid:1838)(cid:3043)sin(cid:2016)2 equation where (cid:1838)(cid:3043)(cid:3404)(cid:3495)(cid:3044)(cid:3095)(cid:3097) is (1) the phenomenological "persistence" length which determines how strong the focusing is. We picked out the term "persistence" length because of the close analogy with the elastic behavior while we are using the guiding electric field line as a flexible writing rod. In cases when the growth rate is nearly constant, one may also define the "response" time (cid:3404)(cid:3013)(cid:3291)(cid:3049)(cid:3282) , where (cid:1874)(cid:3034) is the growth velocity of the structure. 6 Although looking quite innocent, Eq. (1) leads to surprisingly rich formulation. For application it is also important that the vertical distance between the mask and the stage plays little role provided the field lines issue nearly normally to the mask in the relevant region around each growing structure. That gives the possibility to make 3D structures by 2D motion of the stage. Let us illustrate the phenomenology with two cases: a sudden 1D motion of the theoretical shape). The former leads to a steady-state growing structure inclined at some stage in (cid:1876) direction with a constant stage velocity (cid:1874)(cid:3046) (different cases are given in Fig. 2B) and the sudden rotational 2D motion of the mask hole around (cid:1878) axis at a constant angular frequency (cid:2033) (a characteristic helix structure is shown in Fig. 3 along with its angle (cid:2016)(cid:3046), while the latter gives a steady-state helix which parameters (pitch angle (cid:2016)(cid:3047) and radius (cid:1844)(cid:3047) ) are tightly bound to the phenomenological persistence length (cid:1838)(cid:3043) and response time (cid:2028). For the stage motion along (cid:1876) axis with velocity (cid:1874)(cid:3046)(cid:3404)(cid:1874)(cid:3034)sin(cid:2016)(cid:3046), where (cid:2016)(cid:3046) is a given angle, the equations of tip growth motion in (cid:1876) and (cid:1878) directions are Eq. (2) along with Eq. (1) describes typical relaxation behavior when angle (cid:2016)(cid:3404) 0 relaxes to its steady state value (cid:2016)(cid:3046) (Fig. 2, A and B) and the distance along the (cid:1876) axis from the tip to the center of the mask hole approaches (cid:1838)(cid:3043)sin(cid:3087)(cid:3294)(cid:2870) (so-called delay distance). One can estimate the persistence length (cid:1838)(cid:3043)(cid:3406)1 (cid:2020)(cid:1865) by simply measuring the length of the "knee" region in Fig. 2B that manifests the transition from (cid:2016)(cid:3404)0 to (cid:2016)(cid:3046). With the growth velocity (cid:1874)(cid:3034)(cid:3406)50 (cid:2020)(cid:1865)/(cid:1860) one gets the estimate of (cid:2028)(cid:3406)1.2 (cid:1865)(cid:1861)(cid:1866). (cid:3031)(cid:3019)(cid:3031)(cid:3047)(cid:3404)(cid:1874)(cid:3034)sin(cid:2016)(cid:3046)(cid:3398)(cid:1874)(cid:3034)sin(cid:2016); (cid:3031)(cid:3053)(cid:3031)(cid:3047)(cid:3404)(cid:1874)(cid:3034)cos(cid:2016). (2) 7 It is interesting to note that counterintuitive downward growth (Fig. 2B) (when Eq. (2) can be rewritten for the tip position (cid:1876)(cid:3047) in the general case of arbitrary stage position (cid:1876)(cid:3046). (cid:2016)(cid:3046)(cid:3408)(cid:3095)(cid:2870) ) is always possible due to electric field line configurations at the initial condition when the mask hole is placed at the delay distance (cid:1838)(cid:3043)sin(cid:3087)(cid:3294)(cid:2870) from the tip of the vertical from Fig. 2A. At this steady-state, the stage velocity is (cid:1874)(cid:3046)(cid:3404)(cid:1874)(cid:3034)sin(cid:2016)(cid:3046), being the same as for the upward growth steady-state value at angle (cid:2024)(cid:3398)(cid:2016)(cid:3046)(cid:3407)(cid:2024)/2 because sin(cid:2016)(cid:3046)≡ sin(cid:4666)(cid:2024)(cid:3398)(cid:2016)(cid:3046)(cid:4667). However, now the delay distance at the steady-state downward growth (cid:1838)(cid:3043)sin(cid:3087)(cid:3294)(cid:2870) is larger than the one for the upward growth (cid:1838)(cid:3043)sin(cid:3095)(cid:2879)(cid:3087)(cid:3294)(cid:2870) . As far as we verified pillar. In such situation the electric field line directs the tip growth downwards as is seen this theoretical prediction experimentally (see Fig. 2B), this simple case of 3D printing brings confident in the theory in application to more sophisticated case of a helix. Furthermore, using movement of the stage, we can fabricate various structures. (Fig. S7 and S8) A uniform field of the parallel helices is shown in Fig. 3, A and B (and Fig. S9). The case of a helix structure reveals the possibilities of our phenomenological theory to describe and predict the growth morphology in full 3D, given the stage motion in (cid:1876),(cid:1877) hole with a constant angular frequency (cid:2033)(cid:3406)4(cid:2024) (cid:1860)(cid:2879)(cid:2869) leads to the helix given in Fig. 3E directions. Direct generalization on arbitrary stage motion is given in Supplemental Materials. The solution of general equations for a sudden steady state rotation of the mask (right panel) which shows a good correspondence to the experimental helix in Fig. 3E (left panel). 8 Now we only discuss a steady state helix which allows elementary treatment. (cid:1844)(cid:3047)(cid:1844)(cid:3046)(cid:3404) 1(cid:1986)(cid:1875)sin(cid:2016)(cid:3047) From the simple geometry of the right-angle triangle in Fig. 3C (inset) three relations follow: (cid:1844)(cid:3404)(cid:1844)(cid:3046)sin(cid:2030)(cid:3404)(cid:1838)(cid:3043)sin(cid:3087)(cid:3295)(cid:2870) , (cid:1844)(cid:3047)(cid:3404)(cid:1844)(cid:3046)cos(cid:2030), (cid:1844)(cid:3047)(cid:2033)(cid:3404)(cid:1874)(cid:3034)sin(cid:2016)(cid:3047), where (cid:1844)(cid:3046) is the radius of the rotation of the hole in the mask, (cid:2030) is the delay angle between the tip and the hole, (cid:1844) as in Eq. (1) is the distance between the tip and the center of the mask hole. After some simple algebra the relations give the solution for the helix radius (cid:1844)(cid:3047), pitch angle (cid:2016)(cid:3047), and the delay angle (cid:2030): where (cid:2016)(cid:3047)(cid:3404)2asin(cid:3493)(cid:1859)(cid:2869),(cid:2870); (cid:1859)(cid:2869),(cid:2870)(cid:3404)(cid:2869)(cid:2870)(cid:4678)1(cid:3397)(cid:3050)(cid:3118)(cid:2872)∓(cid:3495)(cid:4672)1(cid:3397)(cid:3050)(cid:3118)(cid:2872)(cid:4673)(cid:2870)(cid:3398)(cid:1986)(cid:2870)(cid:1875)(cid:2870)(cid:4679); (cid:1875)(cid:3404)(cid:2033)(cid:2028); (cid:1986)(cid:3404)(cid:1844)(cid:3046)/(cid:1838)(cid:3043), and the sign is chosen to be minus for (cid:1859)(cid:2869) if (cid:1986)(cid:3407)1 and plus for (cid:1859)(cid:2870) if (cid:1986)(cid:3408) 1, so that the solution in Eq. (3) has two types of branches displayed in Fig. 3, C and D. (cid:1844)(cid:3046)(cid:3404)1 (cid:2020)(cid:1865), gives the ratio (cid:3019)(cid:3295)(cid:3019)(cid:3294)(cid:3404)0.9 from which, by using Eq. (3), the experimental growth velocity (cid:1874)(cid:3034)(cid:3404)15.5 (cid:2020)(cid:1865)/(cid:1860), and the experimental angular velocity (cid:2033)(cid:3406)4(cid:2024) (cid:1860)(cid:2879)(cid:2869), one obtains (cid:2028)(cid:3404)0.072 (cid:1860)(cid:3404)4.3 (cid:1865)(cid:1861)(cid:1866) , persistence length (cid:1838)(cid:3043)(cid:3404)1.12 (cid:2020)(cid:1865) , (cid:1986)(cid:3404)0.8 , pitch angle (cid:2016)(cid:3047)(cid:3404)41° (close to the pitch angle of 45° seen in Fig. 3E, tilt view), and the delay angle (cid:2030)(cid:3404)25° (see Fig. 3E, top view, where the circle is incomplete up to the The top view of the structure in Fig. 3E treated as a steady state structure obtained for (3) delay angle). From Fig. 3C one can see that increase in dimensionless angular velocity decreases the helix radius and increases the pitch angle making the helix more compact. It is interesting to note that Eq. (3) at certain parameters contain the solutions that describe a stable steady state growth downwards (see Fig. 3D), similar to the downward growth from Fig.2B. For both types of branches in Fig. 3D there is the angular velocity above 9 which the pitch angle overcomes the right angle and the helix may go downwards. Yet, there is a principal difference between the branches: the ones with (cid:1986)(cid:3408)1 stop existing above some angular frequency, which is frequently observed in experiment. However, even for this branch there always exists a narrow "window" when downward steady state growth is still possible (Fig. 3D). As a universal drawing tool the electric field line is capable of switching to writing on a substrate. It happens when the horizontal stage velocity exceeds the growth rate in the vertical direction, normal to the substrate. (Fig. 4A and Fig. S10) Then it works as a brush tool to produce virtually any desirable shapes as any other brush including multiple passages over the same places to grow 3D structures in a different way (Fig. 4B). The material can be changed at any moment to produce composite structures (see Fig. 4, C, D and Fig. S11) of copper and palladium. We used different slit-shaped holes of the mask to produce wall-like growth for the motionless mask instead of the tip-directed pillar growth. For the wall-like growth, considered as generalization of the tip-like growth, one can imagine that the point-like tip is spread along the line and instead of one leading electric field line we have a sheet. The various structures obtained (Fig. 5, A and B) basically follow the stenсil hole shape, however, the strongly nonlinear nature of the growth stimulates wave-like structures along the wall line top especially pronounced for symmetrical stencil slit shapes (Fig. 5C). The phenomenological theory that we developed can be used to describe such shaped, yet it is out of the scope of the current paper. The powerful and flexible method of 3D printing has been developed. The scaffold that it uses is the electric field configuration that has no restriction as to sizes, so one can imagine that it be scaled down to atomic sizes or up to mesoscopic ones. Broad 10 material independence open the way for producing hybrid structures that are essential for electronic devices. The method contains three modes which are complementary: controlled tip-directed 3D growth, the writing mode that can also produce 3D structures in the repeating passages including walls, and the stencil mode that produces wall-like structures of various shapes. Manipulating all of them gives sufficient freedom to realize complex 3D designs. The phenomenological theory that we presented is robust and simple to help organize the 3D growth process to compete with the controlled 3D "drawing" usually provided by laser techniques in polymer based material. General equations for arbitrary tip growth direction are quite simple to be able to solve the reverse problem of finding the appropriate stage motion while being given the desired morphology of the grown structure. Last but not least is that the vertical position of the mask is not important which greatly simplifies the movement protocol of the stage: 2D stage movement in its own plane might be enough for full 3D printing however complex. Acknowledgements This work was supported by the Global Frontier R&D Program of the Center for Multiscale Energy System (2011-0031561 and 2012M3A6A7054855) by the National Research Foundation (NRF) under the Ministry of Science, ICT and Future Planning, Korea 11 References 1. J. J. 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Fudouzi et al., Site‐controlled deposition of microsized particles using an F. Stellacci et al., Laser and electron‐beam induced growth of nanoparticles for electrostatic assembly. Adv Mater 14, 1649-1652 (2002). 2D and 3D metal patterning. Adv Mater 14, 194-198 (2002). 12 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23. 24. 25. 26. 27. J. U. Park et al., High-resolution electrohydrodynamic jet printing. Nat Mater 6, 782-789 (2007). B. Y. Ahn et al., Omnidirectional printing of flexible, stretchable, and spanning silver microelectrodes. Science 323, 1590-1593 (2009). S. Mishra et al., High-speed and drop-on-demand printing with a pulsed electrohydrodynamic jet. J Micromech Microeng 20, 095026 (2010). P. Galliker et al., Direct printing of nanostructures by electrostatic autofocussing of ink nanodroplets. Nat Commun 3, 890 (2012). H. Kim et al., Parallel patterning of nanoparticles via electrodynamic focusing of charged aerosols. Nat Nanotechnol 1, 117-121 (2006). H. Lee et al., Focused patterning of nanoparticles by controlling electric field induced particle motion. Applied Physics Letters 94, 053104 (2009). S. You et al., High-resolution, parallel patterning of nanoparticles via an ion- induced focusing mask. Small 6, 2146-2152 (2010). H. Lee et al., Three-dimensional assembly of nanoparticles from charged aerosols. Nano Lett 11, 119-124 (2011). K. Ha et al., Large-area assembly of three-dimensional nanoparticle structures via ion assisted aerosol lithography with a multi-pin spark discharge generator. Nanotechnology 25, 225302 (2014). K. Jung et al., Hotspot-engineered 3D multipetal flower assemblies for surface- enhanced Raman spectroscopy. Adv Mater 26, 5924-5929 (2014). Y. Bae et al., Multifurcation Assembly of Charged Aerosols and Its Application to 3D Structured Gas Sensors. Adv Mater 29, 1604159 (2017). 28. M. Choi, Three dimensional nanoprinting via aerosol technology. in Aerosol Technology 2018. (Bilbao, Spain, 2018). 29. W. Jung et al., 3D Nano-Printing via Electric-Field Assisted Aerosol Lithography. in International Aerosol Conference 2018. (Saint Louis, Missouri, USA, 2018). 30. W. Jung et al., 3D Nano-Printing Technique Based on Ion-Assisted Aerosol Lithography. in 2018 Materials Research Society. (Boston, Massachusetts, USA, 2018). S. You et al., Numerical simulation of microscopic motion and deposition of nanoparticles via electrodynamic focusing. Journal of Aerosol Science 38, 1140- 1149 (2007). O. Devauchelle et al., Laplacian networks: Growth, local symmetry, and shape optimization. Phys Rev E 95, 033113 (2017). 32. 31. 13 Fig. 1. Assembling charged aerosols for 3D nanoprinting and nanocolumn structures. (A) The aerosol based 3D nanoprinting method thorugh floating mask and piezoelectric nanostage. Negative potential applied substrate attracts positive ions and nanoparticles simultaneously injected from spark discharge generator. Ions with high mobility reach the substrate first and form distorted local electric field. After that, nanotarticles follow nanoscale focusing field lines and are printed on the substrate. (B) FE-SEM image of the floating mask. The diameter of mask holes is 4μm. (C to E) 3D nanocolumn structures with the flow of time. In the case of high aspect ratio nanocolumn (E), the stage translates vertically to z-axis (500nm min-1) during the particle deposition after 15min staying. (F) Increasing of array density is possible by 14 moving the stage horizontally. The stage moves in 7 steps and stays 10min for each step. (G and H) Different charged aerosols can be used in single fabrication process. (G) FE-SEM and (H) EDS image confirms successful fabrication. 15 Fig. 2. FE-SEM images and simulation result of 3D slanted structures having various slanted angles. (A) Schematic of the growing process where nanoparticles come from the hole in the mask, following the guiding electric field line. (B) Experimental structures (left panel) against the ones, calculated by our theory (right panel), grown a different stage motion protocols that give different angles (cid:2016)(cid:3046) between the tip growth direction and the vertical direction. Lowest images show a counterintuitive downward growth direction predicted by our theory. (C) MATLAB numerical simulation of nanoparticle trajectories. The 3D slanted structure growth showing the nanoparticle trajectories in the focusing electric field. Ion accumulated surface charge density measured by KFM. (Fig. S4) 16 17 Fig. 3. FE-SEM images and calculations from phenomenological theory of 3D helix structures. (A) Helices 3D printed with a rotating stage in tilt view and (B) top view. (C) Normalized helix radius vs dimensionless angular velocity as a series of branches of the solutions of Eq. (3) for (cid:1986)(cid:3407)1 and (cid:1986)(cid:3408)1 (where (cid:1986)(cid:3404)(cid:1844)(cid:3046)/(cid:1838)(cid:3043) is the ratio of the stage rotation radius and the persistence length), which cases are separated by the thick black line. Inset gives the geometry of the steady state stage rotation and the relative tip position. The red line shows the parameter line in which the experimental helix parameters (numbers in red) lie (red dot); (D) helix pitch angle in degrees vs angular velocity. Horizontal lines present the saturation value 2asin∆ of the pitch angle at large angular velocity (recalculated into degrees) that follows from Eq. (3). The red line, red dot, and red numbers correspond to the experimental helix parameters. (E) Tilt and top view of theoretical (right panel) and experimental (left panel) helix structures presented en mass in (A) and (B). 18 Fig. 4. 3D structures created by 3D writing mode. (A) Scattered nanoparticles represent that nanoparticles cannot follow existing nanocolumn when the stage translation velocity increases over certain value. The stage translate to x-axis (25nm s-1) after 10min deposition in first position. (B) Circular movement of the stage can manufacturing 3D cylinder structures of 4μm diameter. (C- D) 3D writing mode can write letters on the substrate through a programmed stage movement. (C) represents FE- SEM image of '3' and 'D' letters and EDS data (D) confirms they are written with different materials. 19 Fig. 5. Various 3D structures depending on floating mask design. (A) SNU (abbreviation of Seoul National University), (B) Korean alphabet, and (C) cross pattern. 20 Supplementary Materials Fig. S1. Experimental set-up for fabrication of multiscale 3D structures using an ion-induced focusing floating mask. It is composed of a spark discharge generator for charged nanoparticles generation, SMPS, and 3D nano-printing system. The 3D nano- printing system consists of the floating mask, a substrate, an electrode, and a piezoelectric nanostage which is controlled by a computer. 21 Fig. S2. Size distribution of nanoparticles measured by SMPS. (A) Pd and (B) Cu nanoparticles size distributions showing geometric mean diameter, geometric standard deviation, and total number concentration. 22 Fig. S3. FE-SEM images of the floating mask. (A) Before and (B) after use. 23 Fig. S4. AFM topography images and KFM images of surface potential distribution on the floating mask. (A) Before and (B) after use. 24 Fig. S5. Top view of high array density created by moving the piezoelectric nanostage in 7 steps. White circles are the first structures before moving the stage. Deposition time of each step is 10min. 25 Fig. S6. Tilt view with FE-SEM low magnification for each slanted angle of 3D structures. (A) 25°, (B) 45°, (C) 90°, and (D) over 90°. 26 Fig. S7. 3D zig-zag shape structures. After 15min deposition in place, the piezoelectric nanostage jumped -1μm on the x-axis and stayed for 4min. Then it jumped to 1μm on the x-axis, stayed for 4min, and repeated one more time. After that, it jumped -1μm on the x-axis again and stayed for 4min. (A) Tilt view with low magnification and (B) one structure in the array. 27 Fig. S8. 3D stair shape structures. After 20min deposition in place, the piezoelectric nanostage jumped 1μm on the x-axis, stayed for 7.5min and repeated this process one more time. (A) Tilt view with low magnification and (B) one structure in the array. 28 Fig. S9. 180° 3D helix structures. Piezoelectric nanostage rotation radius with 1μm, constant angular frequency with 4π h-1, rotation angle with 180°, and persistence length with 1.12μm. (A), (B) Tilt view. (C), (D) Top view. 29 Fig. S10. Tilt view with FE-SEM low magnification of 3D structures created by writing mode. After 10min deposition, the charged nanoparticles are deposited on the surface of substrate instead of the tip of the structures because of movement speed of the piezoelectric nanostage, 25nm s-1, on the x-axis. 30 Fig. S11. AFM topography image and height graph of '3D' structure in writing mode. (A) AFM image of '3D' structure topography. (B) Height graph of '3D' structure following a white line at (A). 31
1903.00898	1	1903	2019-03-03T13:14:46	Database-driven high-throughput study for hybrid perovskite coating materials	[ "physics.app-ph" ]	We developed a high-throughput screening scheme to acquire candidate coating materials for hybrid perovskites. From more than 1.8 million entries of an inorganic compound database, we collected 93 binary and ternary materials with promising properties for protectively coating halide-perovskite photoabsorbers in perovskite solar cells. These candidates fulfill a series of criteria, including wide band gaps, abundant and non-toxic elements, water-insoluble, and small lattice mismatch with surface models of halide perovskites.	physics.app-ph	physics	Database-driven high-throughput study for hybrid perovskite coating materials Azimatu Seidu, Lauri Himanen, Jingrui Li, and Patrick Rinke Department of Applied Physics, Aalto University, P.O.Box 11100, FI-00076 AALTO, Finland We developed a high-throughput screening scheme to acquire candidate coating materials for hybrid perovskites. From more than 1.8 million entries of an inorganic compound database, we collected 93 binary and ternary materials with promising properties for protectively coating halide- perovskite photoabsorbers in perovskite solar cells. These candidates fulfill a series of criteria, including wide band gaps, abundant and non-toxic elements, water-insoluble, and small lattice mismatch with surface models of halide perovskites. dates to find inorganic materials that have the po- tential to protectively coat perovskites in PSCs. We take the inorganic materials from the "Automatic Flow for Materials Discovery" (aflow) database29. aflow contains nearly 2 million material entries that were computed with density-functional-theory (DFT) using the Perdew-Burke-Ernzerhof (PBE) exchange-correlation functional30. FIG. 1. High-throughput screening scheme to extract possi- ble coating materials from aflow. The six filtering criteria are listed in the middle and the corresponding number of re- maining compounds is given by the numbers in yellow. In the following, we will describe our filtering scheme with which we reduced the large number of database entries to only those material candidates with promising coating properties. The workflow is illustrated in Fig. 1. Since PBE generally underestimates band gaps by ∼ 50%31, we set our first criterion (C1) to screen materials with "PBE band gap >1.5 eV". Considering the technical dif- ficulties of coating with quaternary or even more compli- cated compounds32,33, we limited our target materials to binary and ternary compounds in this work (C2). In C3 we excluded all compounds that contain toxic or rare el- ements, and in C4 we discarded the compounds that are unstable in contact with water. Details of how we imple- mented C3 and C4 are available in the Supplementary Material (SM). In C5, we selected candidates with ap- propriate lattices, meaning candidates with at least two perpendicular lattice vectors in the conventional cell. In the final step (C6), we calculated the lattice mismatch between selected perovskite substrates and the coating Perovskite solar cells (PSCs)1 -- 3 have recently reached a power-conversion efficiency (PCE) of >23% only six years after the invention of the state-of-the-art PSC architec- ture in 2012 (PCE∼10%)4,5. This has revived the hope for direct conversion of sustainable, affordable and en- vironmentally friendly solar energy into electricity. The photoabsorbers in PSCs are hybrid (organic-inorganic) perovskites (denoted ABX3 hereafter) especially methy- lammonium (MA) lead iodide (CH3NH3PbI3≡MAPbI3). The salient properties of these materials in optoelectronic applications are optimal band gaps, excellent absorption in the visible range of the solar spectrum, good trans- port properties for both electrons and holes, flexibility of composition engineering, as well as low costs in both raw materials and fabrication1,2,6 -- 9. Despite the excellent PSC-performance in the labora- tory, stability problems limit the development and com- mercialization of this promising materials class. Hy- brid perovskites degrade quickly in heat, oxygen and moisture10 -- 14. With increasing exposure to any of these destabilizing factors, the structure of the hybrid per- ovskite degrades and the PCE reduces concomitantly after several days or even hours15,16. Among the solu- tions that have been proposed to solve this stability and longevity problem are protective coating17 -- 19, the use of two-dimensional perovskites20 -- 23, and doping with small ions14,24 -- 27. Protective coating is particularly promis- ing, as it can passivate the surface dangling bonds of the perovskite photoabsorber and insulate the perovskite from heat and small molecules from the environment. A good coating should have the following properties: (i) a wide band gap (>3 eV), (ii) little impact on the structure of the coated perovskite, (iii) good transport properties, and (iv) high stability in heat, air and water. It would be particularly attractive, if the coating material could also be used as a semiconducting interlayer, a key component in the modern perovskite-based device architectures. In this context, we are especially interested in cheap and efficient hole-transporting coatings, as Spiro-OMeTAD, the most common hole-transporting material (HTM) in PSCs since the birth of this technology4,5, is expensive, has low charge-carrier mobilities and a negative impact on PSC stability28. We here present a database-driven high-throughput study that explores a wide range of possible candi- arXiv:1903.00898v1 [physics.app-ph] 3 Mar 2019 AFLOW C1: Band gap >> 1.5 eV C2: Binary or ternary materials C3: Abundant and non-toxic C4: Not reacting with water C5: Appropriate lattice C6: Lattice mismatch<< 5% Coating candidates 1,859,011 20,178 12,321 5,106 304 201 93 93 1 materials that survived from C5. This last step pro- duced some coating materials with several phases. In such cases, we prioritized the phase with the least lat- tice mismatch to MAPbI3. The other crystal phases are presented in the SM. As substrates, we chose 12 ABX3 perovskites (A = Cs/MA, B = Sn/Pb, and X = Cl/Br/I) that are com- monly used in halide-perovskite-based devices. We op- timized the structure of the tetragonal P4/mbm phase of CsBX3 and the tetragonal (quasi) I4/mcm phase of MABX3 using PBE30 (to stay consistent with aflow data34) and the analytic stress tensor35 implemented in the all-electron numeric-atom-centered orbital code fhi- aims36 -- 38. Details of the DFT calculations are given in the SM. Upon a test calculation, we selected the (001) crystal planes of the perovskites (Figs. 2a and b) since they are the most stable surface of these materials. We determined the lattice mismatch based on the lattice con- stants alone and did not carry out any interface calcula- tions with DFT. Figure 2c shows the two "virtual sur- face models" considered in this work. We did not con- sider larger surface models, since they would make fur- ther computational modeling intractable. FIG. 2. (001) plane of tetragonal CsBX3 (a) and MABX3 (b). The red square in (c) depicts the 2 × 2 and the blue the 2√2 × 2√2 unit cell in the (001) plane of of ABX3. The green square denotes the square primitive cell. Empty circles indicate the lattice points (e.g., B-sites) at the (001) plane. From the PBE-optimized lattice constants, we calculated the lattice mismatch at each coating-perovskite inter- face. To avoid large strain, we required that the coatings should have rectangular lattice planes with small miller indices, e.g., the (100) plane of the cubic lattice or the (11¯20) plane of the hexagonal lattice. More details of this selection is given in the SM. If the lattice constant of the coating and the perovskite are ac and ap along one direction, then the lattice mismatch is, γ , mac − ap mac × 100%, m ∈ N. (1) m is the integer that minimizes γ. We set the criterion γ ∈ (−5, +5)% as shown in Fig. 1. 2 With the high-throughput screening scheme in Fig. 1, we extracted 93 inorganic semiconductor coating candidates (39 binaries and 54 ternaries) from Aflow. In addition, there are ∼1000 suitable ternary compounds, for which we could not find any data on their solubility in water. These remaining compounds will be investigated further in the future. Figure 3 shows the calculated lattice mismatch between the candidates and the 12 ABX3 perovskite substrates. Panels 3a and b reveal that several materials with cubic or tetragonal lattices can be used to coat most of the in- vestigated perovskites: ZnS, BN, some fluorides (BiF3, MoF3 and AgSbF6), some binary oxides (Bi2O3 in both cubic and tetragonal phases, Ce2O3, BeO, PbO, TiO2- anatase, NiO and tetragonal SiO2) and a large range of ternary oxides. In contrast, Figures. 3c and d show that most of the materials that are in neither the cubic nor the tetragonal phase can only cover a small range of per- ovskite substrates. This is because the γ < 5% criterion must be satisfied by two lattice constants, which makes the coating less "versatile" in these phases. From Figs. 3a and b, one can immediately deduce that the lattice mismatch increases from −5 to 5 % as the lattice constant of the substrates increases. The yellow spots show the most promising candidates with mismatch < 1%. Only a few coating candidates with "non-square" planes survived our screening criteria. This is because in such materials, at least two lattice constants must have lattice mismatch within −5 and 5%. For instance, the γ values for the interface between the hexagonal phase of Bi2O3 at MAPbBr3 interface are −6.5% and 0.73% along the a- and c-axis, respectively. Thus Bi2O3 would not be a suitable candidate to coat MAPbBr3. As a first consistency check, we compared the material candidates in Figs. 3a and b to materials that have al- ready been used as transport or mesoporous scaffold lay- ers in PSCs. We found that our search is consistent with common materials such as: NiO as HTM in PSCs39, as well as ZnO39 and TiO2 40 as electron-transporting materials (ETMs). Similarly, our candidate materials 42 which are used as meso- included ZrO2 porous scaffolds in PSCs. Aside from the commonly known metal oxides used in PSCs, we discovered some surprising binary candidates (MoF3, GaN, BiF3, Si3N4 and BN) that have proper- ties suitable to coat the photovoltaic-active halide per- ovskites (Fig. 3a). for ternaries we found BaAl2S4, AgSbF6, BaSiF6 and BaGeF6. These mate- rials came as surprise since they are usually not consid- ered in PSCs due to their high melting temperatures. However, with new coating techniques such as radio- frequency sputtering43, pulsed laser deposition44, vapor- deposition45 and modified hybrid methods such as spin- coating/vapor-deposition46, these materials become con- tenders as effective coating materials for future PSC de- vices. 41 and Al2O3 Similarly, 2×2 √ 2 ×2√ 2 2 (a) CsBX3 (b) MABX3 (c) Substrate models 1 3 FIG. 3. Calculated lattice mismatch (γ) between the considered perovskites (horizontal axes) and suitable coating materials (vertical axes). c, t, o, m, h and r are short for cubic, tetragonal, orthorhombic, monoclinic, hexagonal and rhombohedral crystal structures, respectively. s denotes 2√2 × 2√2 perovskite substrates, all others are 2 × 2. Panel shows (a) binary c (unlabeled) and t coatings, (b) ternary c and t coatings, (c) and (d) "non-square" (i.e., o, m, h and r) for binary and ternary coatings. Of particular interest are the potential coating materials for MAPbI3, the most common photoabsorber in PSCs. Interestingly, our screening procedure reveals that Al2O3 (Fig. 3c), which is the most common mesoporous material in today's PSC architectures5, does not have the mini- mum lattice mismatch for coating MAPbI3. ZnO, NiO, CaSiO3, SiO2, SrZrO3, BaAl2S4, GaN, MoF3, BN, Si3N4 and ZrO2 lead to better lattice match. The actual strain values for MAPbI3 can be found in the far right column of each panel in Fig. 3 Next we briefly address the charge carrier properties of the potential candidates. Table I lists the PBE band gaps of the found candidate coatings for MAPbI3 provided by Aflow29, together with the dominant charge carrier type (n- or p-type). Here, we observe that intrinsic p- type semiconductors such as NiO and PbO, will not only protect PSCs against ambient conditions, but could also serve as efficient HTMs to replace the inefficient Spiro- OMeTAD. We also found insulators such as ZrO2, Si3N4, and BeO (Table I). Due to the large band gap of these materi- als and their insolubility in water, they can be used as efficient mesoporous scaffolds to passivate PSCs against degradation. Additionally, BN could be used as a p -- or n -- type semiconductor with different doping mecha- nisms (Table I). It was recently reported that BiF3 has a high-lying valence band47,48 thus potentially being a good HTM. Also HfO2 could be engineered into a p-type material by controlling the oxygen vacancy content49. Lastly, we briefly comment on realistic coating interfaces. The actual phase of the coating material and the struc- ture of the interface depend on many factors such as the perovskite surface structure and properties, the de- position method, the deposition conditions, as well as the coating thickness. These factors are not included in our database study. An atomistic description of coating- perovskite interfaces requires further computational (e.g., DFT) and experimental work. Results from such future work, such as the stability of the coating materials, could then be incorporated as additional criteria in our screen- ing procedure. In summary, we have developed a systematic and effi- cient screening scheme for perovskite coating materials. Our scheme reduces the ∼1.8 million materials entries in Aflow to 93 possible coating candidates for a series of perovskite photoabsorbers in PSCs. We have identified inexpensive HTMs (NiO and PbO) that can replace the inefficient and expensive Spiro-OMeTAD, as well as sev- eral efficient ETMs (e.g., ZnO) for PSCs. Our results feature new materials beyond metal oxides that will not only enhance the stability of PSCs but also serve as a starting point in the search of novel device materials for emergent PSC technologies. We gratefully thank M. Todorović and G.-X. Zhang for insightful discussions. We acknowledge the computing resources by the CSC-IT Center for Science and the Aalto Science-IT project. An award of computer time was provided by the Innovative and Novel Computa- tional Impact on Theory and Experiment (INCITE) pro- gram. This research used resources of the Argonne Lead- Lattice mismatch % (a) (b) (c) (d) Binary Coating C and T 5 0 -5 MAPbI 3 MASnI 3 CsPbI 3 CsSnI 3 MAPbBr 3 MASnBr 3 CsPbBr 3 CsSnBr 3 MASnCl 3 MAPbCl 3 CsPbCl 3 CsSnCl 3 TiO 2 (rut.(s)) BeO(Ts) Si 3 N 4 ZrO 2 (Ts) BN(s) GaN(s) ZnO(s) SiO 2 (s) SiO 2 (T) NiO MoF 3 BiF 3 (s) PbO SiO 2 (Ts) NiO(s) MoF 3 (s) Bi 2 O3 BiF 3 TiO 2 (anat.) PbO(s) BeO ZnS(s) Ce 2 O3 Bi 2 O3 (Ts) CeO 2 (Ts) ZrO 2 (T) ZrO 2 (s) TiO 2 (anat.(s)) BN BeO(s) HfO 2 (s) ZnS Ternary Coating C and T 5 0 -5 MAPbI 3 MASnI 3 CsPbI 3 CsSnI 3 MAPbBr 3 MASnBr 3 CsPbBr 3 CsSnBr 3 MASnCl 3 MAPbCl 3 CsPbCl 3 CsSnCl 3 CaTiO 3 ZnCr 2 O4 (T) ZnCr 2 O4 BaAl 2 S4 CaSiO 3 SrZrO 3 ZrW 2 O8 Mg 2 SiO 4 ZrP 2 O7 AgSbF 6 SrTiO 3 (T) PbZrO 3 Fe 2 SiO 4 Mg 2 GeO 4 CaTiO 3 (T) CaZrO 3 SrZrO 3 PbMoO 4 (T) Fe 2 SiO 4 SrMoO 4 (T) MgAl 2 O4 BaClF(T) Mg 2 SiO 4 (T) BaTiO 3 Zn 2 SiO 4 BiIO(T) KNbO 3 (T) PbTiO 3 HfSiO 4 (T) SrTiO 3 BiBrO(T) NiC 4 O4 ZnCr 2 O4 (T) ZnCr 2 O4 BiClO(T) BiAsO 4 (T) MgTiO 3 (T) Binary Coating O, M, R and H 5 0 -5 MAPbI 3 MASnI 3 CsPbI 3 CsSnI 3 MAPbBr 3 MASnBr 3 CsPbBr 3 CsSnBr 3 MASnCl 3 MAPbCl 3 CsPbCl 3 CsSnCl 3 SiO 2 (O) SnO(O) BN(M) SiO 2 (M) PbO(O) Bi 2 O3 (O) BN(O) Al 2 O3 (O) BeO(H) B4 C(R) SiO 2 (O) TiO 2 (O) SiO 2 (H) GaN(R) ZrO 2 (O) ZnO(H) HfO 2 (O) SiC(H) Ternary Coating O, M, R and H 5 0 -5 ZnMoO 4 (M) MgAl 2 O4 (O) BaSiO 3 (O) BaGeF 6 (H) BaSiF 6 (H) BeAl 2 O4 (O) KNbO 3 (O) BaTiO 3 (O) ZrP 2 O7 (O) MoOF 4 (M) CaZrO 3 (O) AlPO 4 (M) PbCO 3 (M) SrZO 3 (O) CaTiO 3 (O) Al 2 SiO 5 (O) AlPO 4 (O) CaSiO 3 (O) MAPbI 3 MASnI 3 CsPbI 3 CsSnI 3 MAPbBr 3 MASnBr 3 CsPbBr 3 CsSnBr 3 MASnCl 3 MAPbCl 3 CsPbCl 3 CsSnCl 3 TABLE I. Selected candidate coating materials for MAPbI3. Listed are their band gaps (in eV, data from Aflow29), space groups, and dominant charge carriers (n- or p-type conductivity) with corresponding references. Intrinsic n- and p-type materials, and n- and p-type dopable materials, are labeled by N, P, n and p, respectively. 4 Coating Space group Gap Cond. Refs. Coating Space group Gap Cond. Refs. 50 CaSiO3 BaAl2S4 51 PbO ZnO P4¯3m Pa¯3 Fm¯3m Pm¯3m Fm¯3m Fm¯3m Pm¯3m P63mc I41/amd Fm¯3m P 3.67 3.65 1.73 1.74 1.79 3.95 2.13 5.21 n,p 5.31 8.18 SiO2 MoF3 NiO BiF3 BaTiO3 BN HfSiO4 BeO P4/nmm 1.66 F¯43m Pm¯3m F¯43m P 1.69 N 3.21 1.75 3.86 p 4.01 4.46 n,p 2.28 2.36 3.33 51 48 CaZrO3 GaN ZrO2 HfO2 BN PbZrO3 CaTiO3 Si3N4 P42/nmc P42/nmc F¯43m Pm¯3m Pm¯3m Fm¯3m 49 ership Computing Facility, which is a DOE Office of Sci- ence User Facility supported under Contract DE-AC02- 06CH11357. 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Schroeder, H.-J. Kleebe, and L. Alff, Appl. Phys. Lett. 99, 112902 (2014). 50 L. M. Droessler, Ph.D. thesis, University of Oxford (2014). 51 V. Stevanović, S. Lany, D. S. Ginley, W. Tumas, and A. Zunger, Phys. Chem. Chem. Phys. 16, 3706 (2014). Database-driven high-throughput study for hybrid perovskite coating materials Supplementary Material for Azimatu Seidu,1 Lauri Himanen,1 Jingrui Li,1 and Patrick Rinke1 1Department of Applied Physics, Aalto University, P.O.Box 11100, FI-00076 AALTO, Finland S1. DETAIL OF C3 AND C4 IN THE DATA SCREENING SCHEME In C3, we excluded compounds that contain: • radioactive elements, • toxic elements (Cd, Hg, Tl), • noble metals as well as Re, Au and Te due to their very low abundance in earth's crust. We also discarded all compounds containing H due to their high possibility of hydrolysis. In this work we only consider Ce to represent the whole rare-earth (lanthanides, scandium and yttrium) family as it is the most abundant member. With the help of the CRC handbook for physics and chemistry? and other resources, we generated the data in C4 by manually discarding all compounds that are unstable in water, i.e., water soluble, reacting with water, or decomposing in water. However, the CRC handbook did not have solubility data on all our selected structures, leaving a huge set of data (∼ 4000) mainly from the ternary class of compounds. We therefore need a more reliable reference to classify such compounds. In addition, compounds that have a very low melting point, are explosive, or easy to release poisonous gases were not included. S2. DENSITY-FUNCTIONAL-THEORY CALCULATIONS OF HALIDE PEROVSKITES DFT calculations were performed with the all-electron numeric-atom-centered orbital code fhi-aims? ? ? . For all calculations, we used tight basis set and stress-tensor? implemented in fhi-aims. Scalar relativistic effect by means of the zero-order regular approximations (ZORA)? were included. The computational details were slightly different for the two perovskite classes considered in this work. We used the tetragonal P4/mbm phase to construct 2 × 2 × 2 supercell models for CsBX3, and relaxed the structures with a Γ-centered 4 × 4 × 4 k-point mesh. While for MABX3, we used the tetragonal (quasi) I4/mcm phase and optimized √2 × √2 × 2 supercells with a 6 × 4 × 4 k-point mesh. From the optimized tetragonal structures (with lattice constants a, b = a, c), we chose the (001) planes to construct our virtual surface models for the lattice-mismatch calculations. The corresponding lattice constants are listed in Table S1. TABLE S1. PBE-optimized lattice constants (in Å) of (001) surfaces of the investigated perovskites: single cells (a0), 2 × 2 surface cells (a2×2 = 2a0) and 2√2 × 2√2 surface cells (a2√2×2√2 = 2√2a0). MA- -SnCl3 -PbCl3 -SnBr3 -PbBr3 -SnI3 -PbI3 a √2×2√2 2 15.85 15.90 16.49 16.61 17.49 17.63 Cs- -SnCl3 -PbCl3 -SnBr3 -PbBr3 -SnI3 -PbI3 a2×2 11.52 11.64 11.98 12.01 12.61 12.72 a √2×2√2 2 16.29 16.46 16.95 17.00 17.83 17.99 a0 5.60 5.62 5.83 5.87 6.18 6.23 a2×2 11.21 11.24 11.66 11.75 12.37 12.46 a0 5.76 5.82 5.99 6.01 6.30 6.36 arXiv:1903.00898v1 [physics.app-ph] 3 Mar 2019 S3. SUGGESTED COATING PATTERNS FOR COATINGS OF DIFFERENT LATTICE SYSTEMS We only considered rectangular surfaces of coating materials therewith excluding the triclinic phases. Table S2 lists the lattice constants considered in the coating design (i.e., lattice-mismatch calculations). For hexagonal lattices (including trigonal lattices represented in hexagonal), we considered both (10¯10) and (11¯20) planes. TABLE S2. Lattice constants of cubic (c), tetragonal (t), orthorhombic (o), hexagonal (h), and monoclinic (m) coating materials considered in lattice-mismatch calculations. 2 Lattice constants Considered lattice constants c ac t ac = bc, cc o ac, bc, cc h ac = bc, cc m ac, bc, cc, β 6= 90◦ ac ac (ac, bc), (ac, cc) or (bc, cc) (ac, cc), (√3ac, cc) (ac,√3ac) or (√3ac,√3cc) (ac, bc) or (bc, cc) S4. COATING PARAMETERS FOR MAPbI3 We have listed the most suitable coating materials for MAPI3 with their lattice constants, lattice mismatch and their appropriate perovskite substrates in Tab. S3. Here, we only listed the candidates with lattice mismatch < 2 %. Binary and ternary coating materials with square planes are listed in (Tab. S3a and (Tab. S3b). We have also listed the lattice mismatch (along 2 -- axis) at the coating-MAPI3 interface for binary and ternary coatings with "non-square" planes (Tab. S3c and d). S5. COATING MATERIALS WITH MULTIPLE PHASES Suitable coating materials for PSCs with multiple phases are shown in S1. Here, we show all the remaining coating candidates that were not shown in the main text. We also show the possible coating candidates for both 2 × 2 and 2√2 × 2√2 perovskite substrates used in this work. Here, we use "s" to denote coating materials for the 2√2 × 2√2 surfaces. Cubic phases are not labelled, "t", "o", "r" and "h" denote tetragonal, monoclinic, rhombohedral and hexagonal structures respectively. We used the numbers, 1, 2, 3, ... to differentiate between coating materials of the same structures but different phases. TABLE S3. Most suitable coating for MAPbI3 with γ < 5%: (a) c and t binary coatings, (b) c and t ternary coatings, and (c) h, o and m coatings. Shown are the lattice constants ac (in Å) of each coating considered in the γ calculations, the lattice mismatch γ (in %) and the integer m defined in Eqs. (1) and (2) of the main text, and the size (2 × 2 and 2√2 × 2√2, denoted by I and II, respectively) of perovskite (P) substrate. 3 MoF3 SiO2 GaN ZrO2 ZnO SiO2 PbZrO3 ZrW2O8 CaSiO3 SrZrO3 Structure Pm¯3m I¯43m F¯43m P42/nmc Fm¯3m F¯3m Structure Pm¯3m P213 Pm¯3m P4/mbm ac 4.17 8.98 4.53 3.59 4.21 4.58 ac 4.21 3.54 3.61 3.17 (a) c/t binary coatings / MAPbI3 γ −1.58 −0.144 0.65 1.30 −0.75 1.88 m P I 4 I 1 II 3 3 II II 4 3 I NiO ZnO BN Si3N4 BeO BN (b) c/t ternary coatings / MAPbI3 m P II 4 1 I I 4 II 4 γ −0.75 −1.66 0.27 −0.42 (c) h/o/m/r binary coatings / MAPbI3 CaZrO3 SrZrO3 BaAl2S4 PbTiO3 Structure Fm¯3m F¯43m F¯43m I43d Fm¯3m P42/mmc ac 4.23 4.50 3.62 6.49 3.65 9.13 Structure Pm¯3m P213 Pa¯3 I4/m ac 4.16 3.55 3.65 12.71 γ −0.33 −0.01 0.73 1.93 1.39 1.46 γ −1.89 −1.41 1.40 −0.10 m P I 3 II 3 II 4 3 II I 3 1 I m P II 4 5 I I 3 II 1 Structure ac γ m P Structure ac γ m P BN SiO2 SiC R3m P6522 P3m1 2.51 12.16 7.36 7.06 3.09 12.66 BN 5 −1.27 1 ∗ − 4.59 √3 0.20 ∗ − 4.07 √3 −2.79 −0.52 (d) h/o/m/r ternary coatings / MAPbI3 I I I I I I SiO2 4 1 P63mc Cmca 2.56 4.23 9.09 9.36 0.42 −0.36 1.01 3.90 5 3 2 2 I I I II Structure ac γ m P Structure ac Al2SiO5 Cmcm MgSiO3 Pbcn MgSiO3 Pbca ∗: =√3 · 3.62 3.56 9.29 8.86 9.36 8.86 18.45 −0.96 1.96 −1.59 3.90 −0.61 2.46 5 2 2 2 2 1 II II II II II II BaSiF6 R¯3m MgAl2O4 Cmcm BaGeF6 R¯3m 7.33 7.12 2.81 9.27 7.48 7.24 γ m P √3 −0.23 ∗ − 3.20 √3 2.99 ∗4.94 1.82 −1.45 6 2 √3 √3 I I II II I I 4 FIG. S1. Calculated lattice mismatch (γ) between considered perovskites (horizontal axes) and all coating materials (vertical axes) outcome from the screening scheme: c, t, o, m, h and r represent, cubic, tetragonal, orthorhombic, monoclinic, hexagonal (a) binary c and rhombohedral crystal structures, respectively. (unlabeled) and t coatings, (b) ternary c and t coatings, (c) and (d) "non-square" (i.e., o, m, h and r) for binary and ternary coatings. Numbers 1, 2 ... denote materials of the same crystal structures having different phases 's' denotes the 2√2 × 2√2 × 2√2 perovskite substrates. Lattice mismatch % (a) (b) (c) (d) Binary Coating C and T 5 0 -5 MAPbI 3 MASnI 3 CsPbI 3 CsSnI 3 MAPbBr 3 MASnBr 3 CsPbBr 3 CsSnBr 3 MASnCl 3 MAPbCl 3 CsPbCl 3 CsSnCl 3 SiO 2 (Ts4) SiO 2 (T5) SiO 2 (s5) SiO2(4) BN(T) BeO SiO 2 (3) SiO 2 (Ts7) ZnO(s) SiO 2 (1) SiO 2 (T3) BiF 3 SiO 2 (2) SiO 2 (T7) ZnO SiO 2 (Ts1) SiO 2 (Ts3) BiF 3 (s) Bi 2 O3 (s1) Bi 2 O3 (s3) Bi 2 O3 (s2) SiO 2 (Ts6) BeO(s) SiO 2 (5) SiO 2 (Ts2) Ternary Coating C and T 5 0 -5 MAPbI 3 MASnI 3 CsPbI 3 CsSnI 3 MAPbBr 3 MASnBr 3 CsPbBr 3 CsSnBr 3 MASnCl 3 MAPbCl 3 CsPbCl 3 CsSnCl 3 SrZrO 3 (s) Fe 2 SiO 4 (s) PbTiO 3 (Ts) SrZrO 3 (Ts) PbZrO 3 (s) CaZrO 3 (s) BaTiO 3 (Ts) BaTiO 3 (s) BiIO(Ts) KNbO 3 (Ts) PbTiO 3 (s) Fe 2 SiO 4 (s) PbTiO 3 (s) SrTiO 3 (s) PbTiO 3 (Ts) BiBrO(Ts) NiC 4 O4 (s) CaTiO 3 (s) BiClO(Ts) CaSiO 3 (T1) BaTiO 3 (T) PbTiO 3 SrTiO 3 (Ts) PbTiO 3 (T) SrZrO 3 (T) CaTiO 3 (Ts) PbMoO4(Ts) SrMoO 4 (Ts) BaAl 2 S4 (s) BaClF(Ts) CaSiO 3 (s) CaSiO 3 (T2) CaSiO 3 Binary Coating O, M, R and H 5 0 PbO(O) SiO 2 (O4) BN(H2) SiO 2 (H) SiC(H) BN(Hs2) -5 BN(H1) Bi 2 O3 (O) SiO 2 (O3) SiO 2 (O2) ZrO 2 (O) Si 3 N 4 (H) HfO 2 (O) SiO 2 (O1) Bi 2 O3 (R) SiO 2 (R) MAPbI 3 MASnI 3 CsPbI 3 CsSnI 3 MAPbBr 3 MASnBr 3 CsPbBr 3 CsSnBr 3 MASnCl 3 MAPbCl 3 CsPbCl 3 CsSnCl 3 Ternary Coating O, M, R and H 5 0 -5 MgSiO 3 (O-s1) MgAl 2 O4 (O-s) BaSiO 3 (O-s) MgSiO 3 (O-s2) Al 2 SiO 5 (O-s) BaP 2 O6 (O-s) Mg 2 SiO 4 (O-s2) Co 2 SiO 4 (O-s) Mg 2 SiO 4 (O-s1) KNbO 3 (O-s) Zn 2 SiO 4 (O-s) SrZrO 3 (O-s) Mg 2 SiO 4 (O1) KNbO 3 (O) MgSiO 3 (O-s1) Co 2 SiO 4 (O) Zn 2 SiO 4 (O) InPO 4 (O-s) CaSiO 3 (O-s) MAPbI 3 MASnI 3 CsPbI 3 CsSnI 3 MAPbBr 3 MASnBr 3 CsPbBr 3 CsSnBr 3 MASnCl 3 MAPbCl 3 CsPbCl 3
1906.05561	1	1906	2019-06-13T09:23:15	Setup for simultaneous electrochemical and color impedance measurements of electrochromic films: theory, assessment, and test measurement	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	Combined frequency-resolved techniques are suitable to study electrochromic (EC) materials. We present an experimental setup for simultaneous electrochemical and color impedance studies of EC systems in transmission mode and estimate its frequency-dependent uncertainty by measuring the background noise. We define the frequency-dependent variables that are relevant to the combined measurement scheme, and a special emphasis is given to the complex optical capacitance and the complex differential coloration efficiency, which provide the relation between the electrical and optical responses. Results of a test measurement on amorphous $\mathrm{WO}_3$ with LED light sources of peak wavelengths of $470$, $530$, and $810~\mathrm{nm}$ are shown and discussed. In this case, the amplitude of the complex differential coloration efficiency presented a monotonous increase down to about $0.3~\mathrm{Hz}$ and was close to a constant value for lower frequencies. We study the effect of the excitation voltage amplitude on the linearity of the electrical and optical responses for the case of amorphous $\mathrm{WO}_3$ at $2.6~\mathrm{V}~\mathrm{vs.}~\mathrm{Li/Li}^+$, where a trade-off should be made between the signal-to-noise ratio (SNR) of the optical signal and the linearity of the system. For the studied case, it was possible to increase the upper accessible frequency of the combined techniques (defined in this work as the upper threshold of the frequency region for which the SNR of the optical signal is greater than $5$) from $11.2~\mathrm{Hz}$ to $125.9~\mathrm{Hz}$ while remaining in the linear regime with a tolerance of less than $5\%$.	physics.app-ph	physics	Setup for simultaneous electrochemical and color impedance measurements of electrochromic films: theory, assessment, and test measurement Edgar A. Rojas-González1, a) and Gunnar A. Niklasson1 Department of Engineering Sciences, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala, Sweden (Dated: 14 June 2019) Combined frequency-resolved techniques are suitable to study electrochromic (EC) materials. We present an experimental setup for simultaneous electrochemical and color impedance studies of EC systems in transmission mode and estimate its frequency-dependent uncertainty by measuring the background noise. We define the frequency-dependent variables that are relevant to the combined measurement scheme, and a special emphasis is given to the complex optical capacitance and the complex differential coloration efficiency, which provide the relation between the electrical and op- tical responses. Results of a test measurement on amorphous WO3 with LED light sources of peak wavelengths of 470, 530, and 810 nm are shown and discussed. In this case, the amplitude of the complex differential coloration efficiency presented a monotonous increase down to about 0.3 Hz and was close to a constant value for lower frequencies. We study the effect of the excitation voltage amplitude on the linearity of the electrical and optical responses for the case of amorphous WO3 at 2.6 V vs. Li/Li+, where a trade-off should be made between the signal-to-noise ratio (SNR) of the optical signal and the linearity of the system. For the studied case, it was possible to increase the upper accessible frequency of the combined techniques (defined in this work as the upper threshold of the frequency region for which the SNR of the optical signal is greater than 5) from 11.2 Hz to 125.9 Hz while remaining in the linear regime with a tolerance of less than 5%. I. INTRODUCTION Around 40% of the global energy use occurs in residential and commercial buildings, and approximately 65% of this is generated by fossil fuel sources.1 Electrochromic (EC) smart windows can vary their optical transmission upon the appli- cation of an electrical voltage, which leads to an increase of comfort and a reduction of the need of active indoor cli- mate regulation in a building.2 The optical absorption of EC materials is modified by the intercalation of ions from an electrolyte together with charge-balancing electrons from the outer circuit.3 It is actually the electrons that are responsi- ble for the optical modulation since they populate previously empty states close to the Fermi level. Hence, the dynamics of the EC process involves the transport of both ions and elec- trons, being usually the ions the rate-limiting factor. Frequency-resolved techniques such as electrochemical impedance spectroscopy (EIS) are able to probe the kinetic effects responsible for the electrical properties of EC materi- als and devices.4 The EIS uses a small voltage oscillation as an excitation, and measures the resulting oscillating current response. EIS allows to determine the kinetics of ion diffu- sion in EC materials by fitting the spectra to equivalent circuit models. It has been found that the diffusion process has fractal properties, so called anomalous diffusion,5 and effective dif- fusion coefficients can be determined from experimental data. It has been hypothesized that the optical absorption pro- cess entails an additional step whereby a charge-compensating electron is trapped at an atomic color center.6,7 Another spec- troscopic technique, namely color impedance spectroscopy (CIS) is appropriate to study such effects in EC systems. The a)Electronic mail: [email protected]. CIS technique is analogous to EIS with the difference that it measures the resulting oscillating optical response instead of the current. Simultaneous EIS and CIS measurements give a direct comparison between the optical variation of an EC ma- terial and the dynamics of the charges that induce the optical absorption. However, the realization of a combined EIS and CIS setup presents several experimental challenges in addition to the ones that are specifically related to EIS.8 The relevant sig- nals have to be synchronized and fed into the same frequency response analyzer (FRA). The light source needs to be sta- ble throughout the duration of the experiment and the optical system conformed by the light source and the detector must present a good signal-to-noise ratio (SNR). The latter is nec- essary since the optical modulations associated with CIS are usually small because the linearity requirement restricts the magnitude of the excitation. The previous points, together with the inherent response of the sample of interest, deter- mine the upper and lower bounds of the frequencies that are accessible in combined EIS and CIS measurements. The CIS technique was first used to study adsorption- desorption processes by frequency-modulated reflectance.9 The technique was not used in optical transmittance mode, as far as we are aware, until around 1990.10 Previous works in which EC systems have been studied with a combination of EIS and CIS can be divided in two main categories. The first consists of consecutive (non-simultaneous) EIS and CIS in optical transmission mode.7,10 -- 16 The second involves si- multaneous EIS and CIS in optical reflectance mode,17 and in a few cases also including mass impedance spectroscopy.18,19 The non-simultaneous case entails a risk of having varia- tions in the studied sample between measurements and does not compare responses that come from a simultaneous exci- tation. The optical reflectance mode requires the EC material to be coated onto opaque metallic electrodes. Thus, it is not suitable for studying the combination of an EC material with a transparent conductive electrode, which is the case of many relevant applications -- such as EC smart windows. Although some works have already used combined EIS and CIS mea- surements for obtaining relevant physical insights into EC sys- tems, a thorough analysis of the performance and limitations of this approach is still lacking. In this paper, we present an experimental setup for simul- taneous EIS and CIS studies of EC systems in transmission mode at different optical wavelengths as well as its uncertainty estimation as a function of frequency. We focus our analysis on intercalation electrochromic systems, such as WO3, and we address the issue of improving the SNR at high frequencies by increasing the excitation voltage amplitude. The structure of the paper is described as follows. First, we define the relevant frequency-dependent quantities and elaborate the theoretical framework and concepts used in the analysis. Secondly, we describe the experimental setup and procedures. Thirdly, we present and discuss the performance assessment of the CIS setup and the results of a test measurement on amorphous WO3. Finally, we include some conclusions and remarks. II. THEORY 2 Then, using Euler's formula exp(iφ) = cosφ + i sinφ, it is possible to define the complex frequency-dependent current I(ω) and transmittance T (ω) as follows I(ω) = IA(ω)eiφI (ω), T (ω) = TA(ω)eiφop(ω). (6) (7) The relevant transfer functions can be obtained from differ- ent combinations of VA and Eqs. (6) and (7). Those are: the complex impedance Z(ω) ≡ VA/ I(ω) = Z(ω)eiφZ (ω), (8) with φZ(ω) ≡ −φI(ω); the complex capacitance C(ω) ≡ 1/[iω Z(ω)] = Q(ω)/VA = C(ω)eiφC(ω), (9) with φC(ω) ≡ −π/2 − φZ(ω) and Q(ω) ≡ (iω)−1 I(ω) the complex frequency-dependent charge; a complex optical ca- pacitance Gop(ω) ≡ hT i−1[ T (ω)/VA] = Gop(ω)eiφop(ω); (10) During the frequency-resolved experiments, the time- dependent oscillatory excitation voltage V (t) takes the form and a complex differential coloration efficiency V (t) = hV i +VA sin(ωt + φV ), (1) K(ω) ≡ Gop(ω)/ C(ω) = hT i−1[ T (ω)/ Q(ω)] with ω = 2πf the circular frequency associated with the linear frequency f , hV i the stationary equilibrium bias, VA the amplitude of the oscillation, and φV the reference phase -- from now on, for simplicity, we set φV = 0. Similarly, assuming a linear system, the resulting time-dependent cur- rent I(t), and transmittance T (t) responses -- with frequency- dependent amplitude and phase -- can be expressed as I(t) = hIi + IA(ω) sin[ωt + φI(ω)], T (t) = hT i + TA(ω) sin[ωt + φop(ω)]. (2) (3) The amplitude VA in Eq. (1) is set by the conditions of the experiment, and the amplitudes and phases in Eqs. (2) and (3) can be obtained experimentally by means of a FRA. A detailed theoretical description of the EIS technique and the work- ing principles of frequency response analyzers can be found elsewhere.8,20 In general, for each frequency, the FRA corre- lates each input with a reference signal of the form sin(ωt) and its quadrature cos(ωt). In the case of I(t), this is done by performing the integrations (ω/Nπ)Z δ+2πN/ω (ω/Nπ)Z δ+2πN/ω δ dtI(t) sin(ωt) = IA(ω) cosφI(ω), (4) dtI(t) cos(ωt) = IA(ω) sinφI(ω), (5) δ with N the integer number of cycles during which the in- tegration takes place, and δ a time delay that is conveniently chosen for the stabilization of the responses upon the applica- tion of the sinusoidal excitation. The same applies to T (t). = K(ω)eiφK (ω), (11) with φK(ω) ≡ φop(ω) − φI(ω) + π/2. In the following, we comment about the relation between the amplitude of the excitation voltage and the linearity of intercalation systems, like WO3. A simplified equiva- lent circuit21 that describes the qualitative features of the impedance response of a WO3 thin film deposited onto a transparent conductive electrode and immersed in a lithium containing electrolyte is depicted in Fig. 1(a). Here, a high- frequency series resistance Rhf -- due to the electrolyte and the transparent conductive electrode -- is put in series with a com- bination consisting of a double layer capacitance Cdl -- that develops at the interface between the electrode surface and the electrolyte -- in parallel with an intercalation branch. The intercalation branch comprises a charge transfer resistance Rct in series with a finite-space Warburg element defined as ZD(ω) = RD coth [(iωL2/D)1/2]/(iωL2/D)1/2, with RD the diffusion resistance, L the film thickness, and D the chemi- cal diffusion coefficient. The amplitude of the total applied oscillating voltage VA is measured between the working (WE) and the reference (RE) electrodes, whereas the complex voltage drops across the high-frequency resistance, and between the terminals of the intercalation branch are denoted by Vhf(ω), and Vint(ω), re- spectively. For descriptive purposes, the qualitative frequency dependence of Vhf(ω) and Vint(ω) is depicted in Fig. 1(b) us- ing illustrative values of the circuit elements of Fig. 1(a). Figure 1(b) outlines a phenomenon explained in detail by Darowicki in Ref. 22 where the author studies an electrode presenting parallel Faradaic and non-Faradaic processes in se- ries with a resistance assigned to an ohmic drop. That is, (a) (b) 3 FIG. 1. (a) Equivalent circuit used to represent the qualitative features of the impedance spectra of a WO3 thin film electrode immersed in an electrolyte. The different elements are described in detail in the main text. (b) Simulation of the frequency dependence of the amplitudes of Vhf(ω) and Vint(ω) normalized with respect to VA. In (b), the vertical line depicts the transition frequency fV and the curves were calculated using the equivalent circuit in (a) with parameters Rhf = 100 Ω, Cdl = 50 µF, Rct = 10 Ω, RD = 50 Ω, L = 300 nm, and D = 5 × 10−10 cm2 s−1. the effective amplitude of the sinusoidal potential at the elec- trode interface Vint(ω) differs from the total applied one VA and this discrepancy varies with frequency. In fact, at high frequencies most of the applied potential is dropped at Rhf, whereas Vint(ω) becomes similar to VA at low frequencies, and the transition between these two regions occurs around a certain threshold -- denoted by fV in Fig. 1(b). The coloration in an electrochromic electrode is assigned to the intercalation branch. Thus, in principle, we can aim for high values of Vint(ω) to increase the SNR of the optical sig- nal. Note that, for example, a constant target value of Vint(ω) throughout the whole frequency range would require consid- erable higher values of the total applied voltage at the high frequencies with respect to those at low frequencies. The up- per bound of VA is determined by the linearity condition of the electrochemical system, which is only regulated by the paral- lel combination in Fig. 1(a) because Rhf is intrinsically linear. In addition, the strong voltage dependence of Rct, ZD(ω), and Cdl -- that leads to a non-linear behavior -- is mentioned by Ho, Raistrick, and Huggins in Ref. 21 and shown experimentally elsewhere23,24 (note that in the latter works the double layer capacitance is modeled by a constant phase element instead of using a pure capacitor). As a result, for a constant value of VA, the non-linear effects are expected to be more relevant at low frequencies. In the context of this work, the previous arguments justify the employment of a variable-amplitude method25 for improv- ing the SNR of the optical signal while staying in the linear regime. Indeed, we can apply high, and low excitation voltage amplitudes at high, and low frequencies, respectively. A theo- retical determination of the appropriate voltage amplitudes for the different frequency ranges of interest would require prior knowledge of the characteristics of the system and is out of the scope of this work. Instead, an experimental approach can be used. For example, an EIS spectrum employing a small excitation voltage amplitude can be measured. Then, subse- quent spectra can be taken with increasing voltage amplitudes until a good SNR is obtained in the CIS spectrum. This can be done while the EIS spectra remain similar to that of the low- amplitude case up to a certain chosen tolerance -- at least for a given portion of the high frequency region of the spectrum, which is the one that usually requires a larger improvement in terms of the SNR of the optical signal. III. EXPERIMENTAL SETUP AND PROCEDURES A. Electrode preparation and electrochemical cell The amorphous tungsten oxide (WO3) films used in this work were prepared by reactive DC magnetron sputtering in a Balzers UTT 400 unit. A 99.95% pure metallic W target was used in a 99.995% pure O2/Ar atmosphere at 30 mTorr. The deposition was performed at a discharge power of 240 W, Ar flow of 50 ml/min, and O2 flow of 22 ml/min. The films (∼ 300 nm thick) were deposited onto an unheated glass substrate pre-coated with conducting In2O3:Sn (ITO) having a sheet resistance of 15 Ω/sq. The film thicknesses were de- termined by stylus profilometry using a Bruker DektakXT in- strument. The amorphous structure of the WO3 was confirmed by X-ray diffraction (XRD) patterns collected with a Siemens D5000 diffractometer using Cu Kα radiation. A standard three-electrode setup was used for the electrochemical mea- surements in an argon-filled glove box (H2O level < 0.6 ppm). A quartz cuvette was filled with the electrolyte, which con- sisted of 1M LiClO4 dissolved in propylene carbonate. Unless specified, a WO3 film acted as the WE, and lithium foils were used both as the counter electrode (CE) and the RE. Through- out this work, the active area of the WE was ∼ 1 cm2. B. Electrochemical techniques, and combined EIS and CIS experimental setup The combined EIS and CIS experimental setup is depicted in Fig. 2. The Cyclic voltammetry (CV) and potentiostatic polarization techniques were performed by an electrochemi- cal interface (SI-1286, Solartron), which was connected to the electrodes in the electrochemical cell. It measured the relative potential between the WE and the RE, and the current flow- Computer (display and analysis) Electrochem. Pol interface SI-1286 I V Optical Fiber light source DC4100 LED driver FRA SI-1260 I input Generator V1 input V2 input Electrochemical cell V I HP 34401A multimeter CE RE WE electrolyte PDA-100A-EC Photodetector collimating system with achromatic lenses FIG. 2. Schematics of the combined EIS and CIS experimental setup. ing between the WE and the CE. The SI-1286 also controlled the relative potential of the WE when it was required. A fre- quency response analyzer (SI-1260, Solartron) was used in combination with the electrochemical interface during the si- multaneous EIS and CIS measurements. In this case, the FRA supplied a sinusoidal excitation signal to the SI-1286, and the values measured by the SI-1286 were feed to the FRA inputs. The light source consisted of a fiber-coupled LED con- trolled in constant current mode by a LED driver (DC4100, Thorlabs). We used LEDs of three different peak wave- lengths in the present work -- namely, 810 nm (M810F2, Thor- labs), 530 nm (M530F2, Thorlabs), and 470 nm (M470F3, Thorlabs). An optical fiber (400 µm in diameter, 0.39 NA; M28L01, Thorlabs) was connected to a collimating system (74-ACH, Ocean Optics) with achromatic lenses (74-ACR, Ocean Optics). Unless specified, the collimated beam of light passed through the quartz cuvette, the electrolyte, and the WE before being collected by a photodetector (PDA-100A-EC, Thorlabs). During the frequency-resolved measurements the output signal of the photodetector V pd(t) takes the form V pd(t) = hV pdi +V pd A (ω) sin[ωt + φop(ω)], (12) with hV pdi its stationary equilibrium bias, V pd A (ω) its frequency-dependent amplitude response, and φop(ω) the same phase as in Eq. (3). Then, we can define a com- plex frequency-dependent photodetector voltage as V pd(ω) ≡ V pd A (ω) exp[iφop(ω)]. It is important to remark that the FRA does not give information about the total value of V pd(t) be- cause it only measures the optical signal at the exciting fre- quency. Thus, V pd(t) was simultaneously monitored by a dig- ital multimeter (34401A, HP/Agilent) and recorded by a com- puter during the whole experimental sequence in order to ob- tain the value of hV pdi. Following a similar approach to the one presented by Singh and Richert in Ref. 26, the V pd(t) was fed into the current input of the frequency response analyzer via a 150 Ω resistor. Previously, we had performed a calibration of the FRA output data related to the FRA current input for retrieving the proper values of V pd(ω). We defined the transmittance in Eq. (3) as T (t) = V pd(t)/V pd B , (13) 4 where the output value of the photodetector at the bleached state V pd B (that is, for WO3 at 4.0 V vs. Li/Li+) was chosen as the 100% transmittance reference. Then, hT i = hV pdi/V pd B , and T (ω) = V pd(ω)/V pd B presented typical values between 6 and 8 V. B . In this work, V pd Finally, the real and complex components of the frequency- dependent variables measured by the FRA were recorded by the computer and the transfer functions defined in Eqs. (8)- (11) were calculated and stored for further analysis. Also, a preliminary CV measurement was done on a WO3 WE at 10 mV/s using a BioLogic SP-200 potentiostat. Here, the current density and the transmittance (for the 530 nm LED) were simultaneously measured by feeding the photode- tector output signal into an analog input of the SP-200 poten- tiostat. C. Simultaneous EIS and CIS measurements In the following, we explain the experimental procedure for the background noise assessment, the test measurement on amorphous WO3, and the variable-amplitude method aimed to increase the SNR of the optical signal -- defined here as the ratio between the experimental value of Gop(ω) and its re- spective standard deviation. It is important to mention that, before each experimental sequence, the selected LED was let to stabilize for at least 30 min at the desired intensity. We assessed the background noise level of the CIS using an uncoated ITO electrode (with sheet resistance of 15 Ω/sq) as the WE. In this case, the WE was placed outside the op- tical path -- that is, the beam of light passed only through the quartz cuvette and the electrolyte. The WE presented an open circuit potential of around 3.3 V vs. Li/Li+ when it was first immersed in the electrolyte. For each optical wavelength, the experimental sequence comprised an initial CV during three cycles in the voltage range of 2.7 − 3.7 V vs. Li/Li+ at 50 mV/s, followed by a potentiostatic polarization treat- ment at 3.2 V vs. Li/Li+ for 30 minutes, and 10 sequential simultaneous EIS and CIS measurements at 3.2 V vs. Li/Li+ in the frequency range between 10 mHz and 30 kHz for an ex- citation voltage of 20 mV root-mean-square (rms). The mean and the unbiased estimation of the standard deviation of the real and imaginary components of V pd(ω) were calculated for each set of 10 measurements. The standard deviations calcu- lated here were used as the uncertainty estimation for further measurements related to the optical signal. When it was re- quired, the propagation of the uncertainty was performed as- suming a gaussian distribution of the errors. In this work, we assumed that the uncertainties assigned to the electrochemi- cal measurements were negligible with respect to those of the optical signal. For each optical wavelength, the test measurement on a WO3 electrode consisted of the experimental sequence de- scribed as follows. Initially, a CV was performed in the volt- age range of 2.0 − 4.0 V vs. Li/Li+ at a rate of 5 mV/s during three cycles. Next, a potentiostatic polarization treat- ment was carried out at the equilibrium potential of interest during 20 min, (2.6 V vs. Li/Li+ in this work), which let the WE reach its electrochemical steady-state condition. Fi- nally, the frequency-resolved measurements -- with an integra- tion during 4 cycles after a delay of 1 cycle for each mea- 5 sured frequency -- were done in the frequency range between 10 mHz and 30 kHz using an excitation voltage amplitude of 20 mV rms. The variable-amplitude method was carried out using the 810 nm LED and performing simultaneous EIS and CIS mea- surements on a WO3 WE at a bias of 2.6 V vs. Li/Li+. In this case, we first measured a CV during three cycles in the voltage range of 2.0 − 4.0 V vs. Li/Li+ at 5 mV/s. Then, a potentiostatic polarization treatment was done at 2.6 V vs. Li/Li+ for 20 minutes. Finally, we performed con- secutive simultaneous EIS and CIS measurements at a bias of 2.6 V vs. Li/Li+ in the frequency range between 10 mHz and 30 kHz for excitation voltage amplitude values ranging from 10 to 500 mV rms -- with transitions consisting of potentio- static polarization treatments at 2.6 V vs. Li/Li+ during 10 minutes. (a) (b) IV. RESULTS AND DISCUSSION The cyclic voltammogram of an amorphous WO3 WE and its simultaneously measured transmittance suggest linear re- gions around 2.6 V vs. Li/Li+, see Fig. 3 -- especially if we look at the intercalation branches (the ones denoted by the ar- rows pointing toward the left-hand side). It is also observed that the transmittance exhibits a more extended linear region than the corresponding current response. Thus, we chose this bias potential for the test measurement and the variable- amplitude study. FIG. 4. Background noise of the real (a) and complex (b) compo- nents of V pd(ω) as a function of frequency for the 810 nm LED. The symbols represent the mean values of 10 measurements and the shaded regions show one standard deviation around the mean values. that V pd B ∼ 7 V under typical conditions. Then, a change of ∼ 1 mV in the photodetector output signal would correspond to a transmittance variation of ∼ 0.01%. A close look to the frequency dependence of the standard deviations in Fig. 4 shows three characteristics sections. The first region corresponds to the high frequency part of the spectrum and presents a relatively high noise level that may originate from electrical interferences -- it extends down to ∼ 100 Hz, and ∼ 10 Hz in Figs. 4(a), and 4(b), respectively. This is the most problematic in terms of CIS because, in this frequency range, the optical response is often of the order or smaller than the noise level. The second region exhibits a nearly negligible noise level down to ∼ 0.1 Hz and is well- suited for CIS measurements. The third region is located be- low ∼ 0.1 Hz and shows a relatively high noise level that may arise from very small drifts in the optical stationary equilib- rium bias hV pdi. Generally, this should not represent an issue because the SNR is usually high within this frequency range. FIG. 3. Cyclic voltammogram for an amorphous WO3 film on ITO (15 Ω/sq) coated glass at 10 mV/s. The current density (solid black curve) and the simultaneously measured transmittance using the 530 nm LED (red dashed curve) are shown. The arrows indicate the sweeping direction. The vertical dashed line depicts the position of the 2.6 V vs. Li/Li+ WE potential. A. Background noise determination The background noise levels for the real and imaginary components of V pd(ω) for the 810 nm LED are depicted in Fig. 4. The results for the other light sources, not shown here, are almost identical. As expected from random noise, the mean values are close to zero. The order of magnitude of the vertical axes in Fig. 4 is better understood by considering B. Test measurement on amorphous WO3 The measured complex capacitance and the complex opti- cal capacitance of amorphous WO3 at 2.6 V vs. Li/Li+ are depicted in Fig. 5. 6 (a) (b) (c) (d) FIG. 5. Measured amplitude (a), and phase (c) of C(ω), and amplitude (b) and phase (d) of Gop(ω) for the 470 nm (blue circles), 530 nm (green squares), and 810 nm (red triangles) LEDs. The excitation voltage amplitude was 20 mV rms. The shaded regions in (b) and (d) -- small compared to the scale of the symbols -- show one standard deviation around the experimental values. In (b) and (d), each data set is truncated so that the high-frequency region with SNR of Gop(ω) smaller than 5 is not shown. As expected, there is a resemblance between their re- spective absolute values and phases. Besides, the value of Gop(ω) is higher at a wavelength of 810 nm, and lower at 470 nm, see Fig. 5(b). This is in accordance with the well- known increase of the coloration efficiency of amorphous WO3 toward the infrared.27,28 On the other hand, there are no noticeable discrepancies in φop(ω) for the different op- tical wavelengths, see Fig. 5(d). In addition, the measured complex capacitance is almost identical for the given optical wavelengths, see Figs. 5(a) and 5(c), which shows that the electrochemical system did not vary appreciably between ex- periments. Three sections can be observed in Fig. 5. The first region, for frequencies higher than ∼ 1 Hz, presents phases close to −90◦, which is characteristic of a system with a predomi- nant resistive response. The second region, for frequencies between ∼ 0.1 Hz and ∼ 1 Hz, outlines a transition toward a dominant capacitive response. The latter is shown in the third region for frequencies below ∼ 0.1 Hz. The complex differential coloration efficiency obtained from the data presented in Fig. 5 was calculated using Eq. (11) and the results are depicted in Fig. 6. K(ω) is arguably the most interesting quantity that can be (a) (b) FIG. 6. Amplitude (a) and phase (b) of K(ω) calculated from the data in Fig. 5. Light source wavelengths of 470 nm (blue circles), 530 nm (green squares), and 810 nm (red triangles) are depicted. The shaded regions show one standard deviation around the experimental values. Each data set is truncated so that the high-frequency region with SNR of Gop(ω) smaller than 5 is not shown. 7 obtained from a combined EIS and CIS setup. Its absolute value, see Fig. 6(a), gives the frequency-dependent ampli- tude of the optical modulations per unit charge. Similar to Gop(ω), K(ω) is larger for a wavelength of 810 nm and smaller for 470 nm. Moreover, it increases steadily down to ∼ 0.3 Hz and reaches a plateau-like region for smaller fre- quencies. A delay between the optical variations and the charges can be clearly seen in Fig. 6(b) -- that is, a departure from 0◦. Its maximum occurs at ∼ 1 Hz, while it tends to decrease to- ward the low and high frequencies. Furthermore, no signifi- cant differences between the studied optical wavelengths can be observed in Fig. 6(b). The simultaneity of the EIS and CIS measurements allows to obtain φK(ω) in a reliable and accu- rate way because it does not depend on a calculation that uses results from independent measurements. C. Variable-amplitude method Here, we explore the possibility of improving the SNR of the optical signal at high frequencies. This can be read- ily achieved by increasing the excitation voltage amplitude. However, the effect of such procedure on the departure from the linearity condition must be studied and quantified. In the linear regime, neither the complex capacitance nor the com- plex optical capacitance should depend on the excitation volt- age amplitude, the contrary is an indication that the system is in a non-linear regime. The effect of the variation of the exci- tation voltage amplitude on the complex capacitance and the complex optical capacitance is depicted in Fig. 7. We chose 20 mV rms as the reference excitation voltage amplitude and defined the linear regime by setting a tolerance of 5% with respect to the experimental values at the given reference excitation voltage amplitude. In Fig. 7, the linear regime ranges are portrayed by shaded regions. Figure 7 shows that the lower frequencies deviate rapidly from the linear regime, whereas the higher the frequency the less is the perturbation upon the increase of the excitation volt- age amplitude. These results are in accordance with the quali- tative analysis that we elaborated around the simplified model presented in Fig. 1. An important consequence from the re- sults depicted in Fig. 7 is that, provided that we accept the 5% tolerance criterion, we could choose to use an excitation voltage amplitude up to 100, and 500 mV rms for frequen- cies higher than 1, and 10 Hz, respectively -- these limits were set by Gop(ω) because it is the quantity that departs from the linear regime at a lower excitation voltage amplitude, this can be seen by comparing for example the curve correspond- ing to 1 Hz in Fig. 7(b) to those in Figs. 7(a), 7(c), and 7(d). By doing so, the uncertainties at high frequencies could be drastically diminished -- which is precisely the region of the spectrum that is problematic for the WO3 case, see Fig. 6. Indeed, Fig. 8 shows that for the WO3 WE case the up- per accessible frequencies corresponding to excitation voltage amplitudes of 20, 100 and 500 mV rms are 11.2, 35.5, and 125.9 Hz, respectively. In this work, the upper accessible frequency was defined as the upper threshold of the frequency region for which the of SNR of Gop(ω) is greater than 5. The data on the right-hand side of the vertical dashed lines in Fig. 8 are located beyond (a) (b) 8 (c) (d) FIG. 7. Absolute value (a) and phase (c) of C(ω), and absolute value (b) and phase (d) of Gop(ω) as a function of excitation voltage amplitude for 10 Hz (black up-pointing triangles), 1 Hz (red diamonds), 0.1 Hz (green squares), and 10 mHz (blue circles). An additional data set for 112.2 Hz (magenta right-pointing triangles) is depicted in (a) and (c). Each quantity is normalized with respect to its value at 20 mV rms, and the error bars in (b) and (d) -- smaller than the symbols for some data points -- show one standard deviation around the experimental values. The shadowed regions depict a 5% tolerance with respect to the values at 20 mV rms. The symbols, connected by straight lines, denote the experimental data. (a) (b) FIG. 8. Measured amplitude (a), and phase (b) of Gop(ω) for excitation voltage amplitudes of 20 mV rms (cyan circles), 100 mV rms (yellow squares), and 500 mV rms (magenta triangles). The shaded regions show one standard deviation around the experimental values. On the left-hand side of the vertical dashed line, only the frequency region with SNR of Gop(ω) greater than 5 is shown for each data set. The data for 500 mV rms located on the right-hand side of the vertical dashed line present SNR of Gop(ω) smaller than 5. the upper accessible frequency for the 500 mV rms case and were included in the plots to depict the transition toward a noisy region with high uncertainty values. Moreover, the ex- pected discrepancies at low frequencies due to non-linearities can be observed in Fig. 8, and they are more predominant for the 500 mV rms amplitude. V. CONCLUSIONS A robust experimental setup for performing combined and simultaneous electrochemical and color impedance measure- ments (EIS and CIS) has been developed. We present results of detailed tests of the technique concerning the signal-to- noise ratio and non-linear effects. To our knowledge, this is the first time that an estimation of the frequency-dependent uncertainties of the CIS measurements has been reported, which is essential for judging the validity of the experimen- tal data in different frequency regions and for comparing the experimental results to theoretical models. Test measurements on an electrochromic WO3 film demonstrate the versatility of our measurement setup. Further studies using combined EIS and CIS techniques can give relevant insights for developing and testing models for the coloration mechanism of EC sys- tems. Moreover, the technique and theoretical framework pre- sented here can be extended for studying other materials with voltage-modulated optical properties -- for example, conduct- ing polymers or other systems for which the coloration mech- anism is attributed to interfacial effects. ACKNOWLEDGMENTS 9 M. C. H. McKubre, D. D. Macdonald, G. R. Engelhardt, E. Barsoukov, B. E. Conway, W. G. Pell, N. Wagner, C. M. Roland, and R. S. Eisenberg, "Applications of impedance spectroscopy," in Impedance Spectroscopy: Theory, Experiment, and Applications (John Wiley & Sons, Ltd, Hoboken, 2018) Chap. 4, pp. 175 -- 478. 5S. Malmgren, S. V. Green, and G. A. Niklasson, Electrochim. Acta 247, 252 (2017). 6J. Bisquert, Electrochim. Acta 47, 2435 (2002). 7P. R. Bueno, C. Gabrielli, and H. Perrot, Electrochim. Acta 53, 5533 (2008). 8E. Barsoukov and J. R. Macdonald, Impedance Spectroscopy: Theory, Experiment, and Applications (John Wiley & Sons, Inc., Hoboken, 2018). 9R. Adzic, B. Cahan, and E. Yeager, J. Chem. Phys. 58, 1780 (1973). 10M. Kalaji and L. M. Peter, J. Chem. Soc., Faraday Trans. 87, 853 (1991). 11G. Garcia-Belmonte, P. R. Bueno, F. Fabregat-Santiago, and J. Bisquert, J. Appl. Phys. 96, 853 (2004). 12T. Amemiya, K. Hashimoto, and A. Fujishima, J. Phys. Chem. 97, 4187 (1993). 13T. Amemiya, K. Hashimoto, and A. Fujishima, J. Phys. Chem. 97, 9736 (1993). 14T. Amemiya, K. Hashimoto, and A. Fujishima, J. Electroanal. Chem. 377, 143 (1994). 15J. Kim, D. Tryk, T. Amemiya, K. Hashimoto, and A. Fujishima, J. Electroanal. Chem. 433, 9 (1997). 16J. Kim, D. Tryk, T. Amemiya, K. Hashimoto, and A. Fujishima, J. Electroanal. Chem. 435, 31 (1997). 17S. I. Cordoba-Torresi and H. Takenouti, Proc. SPIE 1272, 152 (1990). 18C. Gabrielli, M. Keddam, H. Perrot, and R. Torresi, J. Electroanal. Chem. 378, 85 (1994). 19J. Agrisuelas, J. J. García-Jareño, D. Gimenez-Romero, and F. Vicente, J. Phys. Chem. C 113, 8430 (2009). 20A. K. Jonscher, Universal Relaxation Law (Chelsea Dielectrics Press, London, 1996). 21C. Ho, I. D. Raistrick, and R. A. Huggins, J. Electrochem. Soc. 127, 343 (1980). 22K. Darowicki, Electrochim. Acta 42, 1781 (1997). 23M. S. Mattsson, Solid State Ionics 131, 261 (2000). 24M. Strømme, A. Gutarra, G. A. Niklasson, and C. G. Granqvist, J. Appl. Phys. 79, 3749 (1996). E. A. Rojas-González is grateful for the support from the 25B. Hirschorn, I. Ibrahim, M. E. Orazem, H. Takenouti, and B. Tribollet, University of Costa Rica. 1I. E. Agency, Energy Technology Perspectives 2017 (2017). 2C. G. Granqvist, Thin Solid Films 564, 1 (2014). 3C. G. Granqvist, Handbook of Inorganic Electrochromic Materials (Elsevier, Amsterdam, 1995). 4N. Bonanos, B. C. H. Steele, E. P. Butler, J. R. Macdonald, W. B. Johnson, W. L. Worrell, G. A. Niklasson, S. Malmgren, M. Strømme, S. K. Sundaram, ECS Trans. 13, 81 (2008). 26L. P. Singh and R. Richert, Rev. Sci. Instrum. 83, 033903 (2012). 27L. Berggren, A. Azens, and G. 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1901.11062	1	1901	2019-01-30T19:31:54	Rigorous Analytical Model for Metasurface Microscopic Design with Interlayer Coupling	[ "physics.app-ph", "physics.optics" ]	We present a semianalytical method for designing meta-atoms in multilayered metasurfaces (MSs), relying on a rigorous model developed for multielement metagratings. Notably, this model properly accounts for near-field coupling effects, allowing reliable design even for extremely small interlayer spacings, verified via commercial solvers. This technique forms an appealing alternative to the common full-wave optimization employed for MS microscopic design to date.	physics.app-ph	physics	Rigorous Analytical Model for Metasurface Microscopic Design with Interlayer Coupling Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 3200003, Israel Email: ∗[email protected] Shahar Levy, Yaniv Kerzhner and Ariel Epstein∗, 9 1 0 2 n a J 0 3 ] h p - p p a . s c i s y h p [ 1 v 2 6 0 1 1 . 1 0 9 1 : v i X r a Abstract -- We present a semianalytical method for designing meta-atoms in multilayered metasurfaces (MSs), relying on a rigorous model developed for multielement metagratings. No- tably, this model properly accounts for near-field coupling effects, allowing reliable design even for extremely small interlayer spacings, verified via commercial solvers. This technique forms an appealing alternative to the common full-wave optimization employed for MS microscopic design to date. I. INTRODUCTION In recent years, numerous reports have demonstrated the ability of Huygens' and bianisotropic metasurfaces (MS) to perform complex wavefront manipulation at microwave fre- quencies [1], [2]. These planar structures are composed of subwavelength polarizable elements (meta-atoms) featuring electric, magnetic, and (possibly) magnetoelectric responses. Synthesis of such MSs usually includes a macroscopic de- sign stage, where the necessary homogenized MS constituent distribution is derived from the desired field transformation; and a microscopic design stage, where this abstract distri- bution is discretized, and physical structures for the meta- atoms implementing the required local response are devised [3]. The latter typically relies on time-consuming full-wave optimization; although alternative semianalytical transmission- line-model approaches have been proposed for the common cascaded impedance sheet formation [4], these techniques neglect interlayer near-field coupling effects, thus require a final optimization step in full-wave solvers [5]. In this paper, we present a rigorous reliable microscopic design method to synthesize a multilayer MS, composed of N cascaded capacitively-loaded wires (Fig. 1). The method relies on the analytical model presented in [6] and adjusted for metagratings [7], allowing characterization of the meta- atom response in a way that properly accounts for the near- field phenomena. We utilize this method to semianalytically compose a look-up table (LUT) for 5-layer Huygens' meta- atoms, used to design a Huygens' MS (HMS) for anomalous refraction. Simulations in a commercial solver verify that, even for extremely close interlayer separation, highly-efficient refraction is obtained, without any full-wave optimization. II. THEORY We consider multilayered meta-atoms composed of N cas- caded wires, loaded with printed capacitors of width Wn, posi- tioned at the planes z = nh (0 ≤ n < N), and designated to be excited with transverse electric fields (Ez = Ey = Hx = 0). Fig. 1. Multilayered meta-atom characterization configuration (N = 5). When excited by Einc x ((cid:126)r) = Eine−jkz is evaluated (Fig. 1) [3]. To associate a given physical structure with effective po- larizabilities (thus compiling the aforementioned LUT), the Lx× Ly meta-atoms are repeated periodically along the x and y axes (Lx, Ly (cid:28) λ), and their response to a normally incident plane wave Einc x , currents will be induced on the wires at the nth layer; as Lx (cid:28) λ, these can be effectively treated as electric line sources carrying current In parallel to the x axis, uniformly loaded by an impedance density of Zn (associated with the printed capacitor of width Wn) [6] -- [8]. Consequently, the fields produced by the excited wires at z = nh read (y − pLy)2 + (z − nh)2 ∞(cid:88) (cid:113) H (2) (cid:20) (cid:21) (1) k x,n((cid:126)r) =− kη Els 4 In p=−∞ 0 where the induced currents In need to be computed to assess the scattered fields. This can be achieved by invoking Ohm's law on the wires; using the Poisson formula, one gets [6], [7] ZnIn = Eine−jknh + j In log (cid:19) (cid:18) πw (cid:33) 2Ly kη 2π (cid:32)N−1(cid:88) (cid:32)(cid:80)N−1 ∞(cid:88) l=0 − η 2Ly − jkη (cid:33) where w is the wire width and αm =(cid:112)(2πm/Ly)2 − k2. Ile−jkn−lh l=0 Ile−αmn−lh − In 2πm Lyαm m=1 (2) For given meta-atom geometry, i.e. given load impedances Zn, (2) forms a set of linear equations, from which the currents In can be resolved. Using these, the total scattered fields can be evaluated by summing the contributions (1) of the N cascaded layers and the incident field. Finally, with the Poisson xyzW1W2W3W2W1LyhwLxEincR⋅EincT⋅EincW1W1W2W2W3W3W2W2W1W1formula, the total fields can be expressed as a sum of Floquet- Bloch (FB) modes, from which the homogenized (zeroth-order mode) transmission and reflection coefficients associated with the given meta-atom can be readily retrieved as [3], [6] T = 1− η e−jknh (cid:80)N−1 (cid:80)N−1 (3) 2Ly In Ein ejknh, R = η 2Ly In n=0 Ein III. RESULTS AND DISCUSSION n=0 To verify and demonstrate the prescribed formalism, we utilize it to design a HMS for anomalous refraction, redirecting a normally incident plane wave towards θout = 56◦. The MS is composed of a symmetric cascade of N = 5 layers, featuring 3 degrees of freedom, W1, W2, W3, with Lx = Ly = λ/5 and h = λ/20 (Fig. 1); the macro-periodicity required to obtain the desired refraction is Λ = 1.2λ (6 unit cells). Our first goal is to compile the suitable LUT, associating all feasible triplets (W1, W2, W3) with their corresponding unit- cell transmission and reflection coefficients. To use (1)-(3) to this end, we first need to establish a relation between the capacitor width W and the effective load impedance-per-unit- length Z. This is done by simulating a single-layer structure in ANSYS HFSS for a range of W values, and extracting via (2)-(3) with N = 1 the complex Z (W ) leading to the recorded scattering parameters. Equipped with the interpolated relation Z (W ), we sweep the design space (W1, W2, W3) and use MATLAB to calculate for each triplet the predicted R and T following the scheme in Section II, forming the desired LUT. For refraction involving a normally incident plane wave, 0◦- Huygens' meta-atoms can be used [3], corresponding to unit cells exhibiting unity transmission magnitude and linear phase across the period. Hence, we use the LUT to identify those combinations (W1, W2, W3) yielding the maximal transmis- sion magnitude for every possible phase shift. The best unit cell geometries as a function of (cid:54) T , obtained without any full- wave optimization, are presented in Fig. 2 (* markers), along with the predicted (orange circles) transmission magnitude and phase. The blue triangles denote the simulated values extracted for each of these meta-atoms from HFSS match these predictions well, indicating the fidelity of our analytical model, clearly capable of incorporating realistic copper losses. Lastly, to form the desired MS, we sample Fig. 2 in 60 deg intervals, choosing these 6 unit cells with the highest average T. This macro period, comprised of 30 copper capacitively- loaded wires with the Wn prescribed by the LUT, was simulated in HFSS under periodic boundary conditions. The recorded electric field distribution and the coupling efficiencies to the various FB modes are presented in Fig. 3. These results clearly indicate that although no full-wave optimization was performed, our semianalytical design scheme yielded a highly efficient refracting HMS. In fact, if one excludes the inevitable conductor losses, it is found that about 90% of the scattered power is coupled to the desired −1 mode in transmission, very close to the optimal coupling efficiency of 92% [3]. IV. CONCLUSION To conclude, we presented a rigorous semianalytical scheme for microscopic design of multilayered MSs. In contrast to Fig. 2. Comparison between analytically predicted and full-wave simu- lated transmission (a) magnitude and (b) phase, for the capacitor widths (W1, W2, W3) denoted by * markers (Fig. 1). Fig. 3. Full-wave simulation results for the anomalous refraction HMS (θin = 0◦, θout = 56◦) semianlytically designed in Section III. previous techniques, the model properly accounts for interlayer near-field coupling, thus exhibiting high fidelity. Verified via commercial solvers, we expect this efficient methodology, avoiding full-wave optimization, to accelerate practical real- izations of MSs for a variety of functionalities. REFERENCES [1] C. Pfeiffer and A. Grbic, "Metamaterial Huygens' surfaces: tailoring wave fronts with reflectionless sheets," Phys. Rev. Lett., vol. 110, no. 19, p. 197401, 2013. [2] V. S. Asadchy, Y. Ra'di, J. Vehmas, and S. A. Tretyakov, "Functional metamirrors using bianisotropic elements," Phys. Rev. Lett., vol. 114, no. 9, p. 095503, 2015. [3] A. Epstein and G. V. Eleftheriades, "Huygens' metasurfaces via the equivalence principle: design and applications," J. Opt. Soc. Am. B, vol. 33, pp. A31 -- A50, Feb 2016. [4] C. Pfeiffer and A. Grbic, "Bianisotropic metasurfaces for optimal po- larization control: Analysis and synthesis," Phys. Rev. Appl., vol. 2, p. 044011, Oct 2014. [5] M. A. Cole, A. Lamprianidis, I. V. Shadrivov, and D. A. Powell, "Re- fraction efficiency of huygens' and bianisotropic terahertz metasurfaces," arXiv preprint arXiv:1812.04725, 2018. [6] P. M. T. Ikonen, E. Saenz, R. Gonzalo, and S. A. Tretyakov, "Modeling and analysis of composite antenna superstrates consisting on grids of loaded wires," IEEE Trans. Antennas Propag., vol. 55, no. 10, pp. 2692 -- 2700, 2007. [7] A. Epstein and O. Rabinovich, "Perfect Anomalous Refraction with Meta- gratings," in 12th European Conference on Antennas and Propagation (EUCAP2018), arXiv: 1804.02362, 2018. [8] Y. Ra'di, D. L. Sounas, and A. Al`u, "Metagratings: Beyond the limits of graded metasurfaces for wave front control," Phys. Rev. Lett., vol. 119, no. 6, p. 067404, 2017. 0510152025303540-200-150-100-50050100150200T0510152025303540Configuration00.20.40.60.81T2020406080100120W [mil]Full-WaveSemianalyticalW1W2W30510152025303540-200-150-100-50050100150200T0510152025303540Configuration00.20.40.60.81T2020406080100120W [mil]Full-WaveSemianalyticalW1W2W30510152025303540-200-150-100-50050100150200T0510152025303540Configuration00.20.40.60.81T2020406080100120W [mil]Full-WaveSemianalyticalW1W2W30510152025303540-200-150-100-50050100150200T0510152025303540Configuration00.20.40.60.81T2020406080100120W [mil]Full-WaveSemianalyticalW1W2W3 Transmission Mode 1: 4.16% Mode 0: 2.1% Mode -1: 80.14% Reflection Mode 1: 2.62% Mode 0: 0.23% Mode -1: 0.16% Absorption:10.59%
1908.03453	1	1908	2019-08-09T13:32:25	Ultrasensitive torque detection with an optically levitated nanorotor	[ "physics.app-ph", "physics.optics", "quant-ph" ]	Torque sensors such as the torsion balance enabled the first determination of the gravitational constant by Cavendish and the discovery of Coulomb's law. Torque sensors are also widely used in studying small-scale magnetism, the Casimir effect, and other applications. Great effort has been made to improve the torque detection sensitivity by nanofabrication and cryogenic cooling. The most sensitive nanofabricated torque sensor has achieved a remarkable sensitivity of $10^{-24} \rm{Nm}/\sqrt{\rm{Hz}}$ at millikelvin temperatures in a dilution refrigerator. Here we dramatically improve the torque detection sensitivity by developing an ultrasensitive torque sensor with an optically levitated nanorotor in vacuum. We measure a torque as small as $(1.2 \pm 0.5) \times 10^{-27} \rm{Nm}$ in 100 seconds at room temperature. Our system does not require complex nanofabrication or cryogenic cooling. Moreover, we drive a nanoparticle to rotate at a record high speed beyond 5 GHz (300 billion rpm). Our calculations show that this system will be able to detect the long-sought vacuum friction near a surface under realistic conditions. The optically levitated nanorotor will also have applications in studying nanoscale magnetism and quantum geometric phase.	physics.app-ph	physics	Ultrasensitive torque detection with an optically levitated nanorotor Jonghoon Ahn,1 Zhujing Xu,2 Jaehoon Bang,1 Peng Ju,2 Xingyu Gao,2 and Tongcang Li1, 2, 3, 4, * 1School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA 2Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA 3Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, Indiana 47907, USA 4Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA (Dated: August 12, 2019) 9 1 0 2 g u A 9 ] h p - p p a . s c i s y h p [ 1 v 3 5 4 3 0 . 8 0 9 1 : v i X r a Torque sensors such as the torsion balance enabled the first determination of the gravitational constant by Cavendish [1] and the discovery of Coulomb's law. Torque sensors are also widely used in studying small-scale magnetism [2, 3], the Casimir effect [4], and other applications [5]. Great effort has been made to improve the √ torque detection sensitivity by nanofabrication and cryogenic cooling. The most sensitive nanofabricated torque sensor has achieved a remarkable sensitivity of 10−24Nm/ Hz at millikelvin temperatures in a dilution refrig- erator [6]. Here we dramatically improve the torque detection sensitivity by developing an ultrasensitive torque sensor with an optically levitated nanorotor in vacuum. We measure a torque as small as (1.2±0.5)×10−27Nm in 100 seconds at room temperature. Our system does not require complex nanofabrication or cryogenic cool- ing. Moreover, we drive a nanoparticle to rotate at a record high speed beyond 5 GHz (300 billion rpm). Our calculations show that this system will be able to detect the long-sought vacuum friction [7 -- 10] near a surface under realistic conditions. The optically levitated nanorotor will also have applications in studying nanoscale magnetism [2, 3] and quantum geometric phase [11]. Recent developments in levitated optomechanics provide a new paradigm for sensing and precision measurements [12 -- 14]. Recently, the center-of-mass (COM) motion of an op- tically levitated nanoparticle in vacuum was cooled to mi- crokelvin temperatures [15]. Experimental control of the ro- tation [16 -- 21], torsional vibration [18, 22], and precession [23] of a levitated nanoparticle in vacuum have also been demonstrated. A levitated nanoparticle has been used to study nonequilibrium thermodynamics at small scales [24 -- 27] and demonstrate force sensing at the zeptonewton scale [13]. It was proposed that an optically levitated nonspherical nanopar- ticle in vacuum would be an ultrasensitive torque sensor [22] and could study anisotropic surface interactions [28]. While optically levitated torque sensors have attracted many interests [17, 18, 23], an experimental demonstration of a torque sen- √ sitivity better than that of the state-of-the-art nanofabricated torque sensor (10−24Nm/ Hz) [6] has not been reported. Here we report an optically levitated nanorotor torque sen- sor that is several orders of magnitudes more sensitive than the state-of-the-art nanofabricated torque sensor [6]. We measure an external torque as small as (1.2 ± 0.5) × 10−27Nm in just 100 seconds at room temperature. We also investigate differ- ent dynamic behaviors of a nanosphere and a nanodumbbell. This nanorotor torque sensor will be particularly suitable to detect the long-sought vacuum friction [7 -- 10]. A fast rotating neutral nanoparticle can convert quantum and thermal vacuum fluctuations to radiation emission. Because of this, the elec- tromagnetic vacuum behaves like a complex fluid and will ex- ert a frictional torque on a nanorotor [7, 8]. While there have been many theoretical investigations on vacuum friction, it has not been observed experimentally yet. To observe the vacuum friction, the nanorotor needs to spin at a very high speed. In this work, we optically drive a silica nanoparticle to rotate be- yond 5 GHz, which is about 5 times faster than the former record of the fastest nanorotor [18, 19]. We calculate the vac- uum friction acting on a rotating silica nanosphere near a flat surface that has a large local density of electromagnetic states to enhance the vacuum friction [9, 10]. Our calculations show that the vacuum friction acting on a silica nanosphere rotating at 1 GHz near a flat silica surface will be large enough to be observed under realistic conditions. In this experiment, we optically trap a silica nanoparticle (a nanosphere or a nanodumbbell) in a vacuum chamber using a tightly focused 1550 nm laser (Fig. 1). The polarization of the trapping laser is controlled with a quarter waveplate. An ad- ditional 1020 nm laser is used to apply an external torque that will be measured. The trapping laser passes a collimation lens and is guided to balanced photo detectors that monitor the ro- tational, torsional, and the center-of-mass motions of the lev- itated nanoparticle. When the nanoparticle rotates, it changes the polarization of the trapping laser slightly, which is moni- tored with a balanced photo detector after a polarizing beam splitter (Fig. 1(a)). The signal of the balanced detector is sent to a spectrum analyzer to measure the rotation frequency. Once a nanoparticle is trapped in a linearly-polarized 1550 nm laser, we collect the power spectral density (PSD) signals of its motion at 10 torr to verify its geometry [18]. Fig. 2(a) shows the PSD's of the motion of a nanosphere. The ratio of the damping rates in directions perpendicular and parallel to the electric field of the laser is measured to be 1.02 ± 0.01, which agrees well with the expected value of 1 for a sphere. There is no observable torsional peak for the nanosphere. On the other hand, the PSD of a nanodumbbell has a clear tor- sional peak as shown in Fig. 2(b). The measured damping ratio is 1.23 ± 0.02 for this nanodumbbell, which agrees with the expected value of 1.27 [18]. After the geometry of a levitated nanoparticle is confirmed, we change the polarization of the trapping laser from linear to circular. The angular momentum of the circularly polar- ized laser induces a torque on the levitated nanoparticle and 2 √ m+γ2] Mac I 2[ω2 where Mdc is the dc component of the optical torque which mainly comes from the trapping beam, Mac is the external ac torque drive from the 1020 nm laser, ωm is the frequency of the modulation, Mth is the thermal fluctuation torque, I is the moment of inertia of the nanorotor, ωr is the angular rotation velocity of the nanoparticle, γ is the rotational damping rate because of residual air molecules. If we ignore the thermal noise Mth, we have ωr(t) = ωdc + sin(ωmt + φ) after the modulated external torque is turned on for a long time. Here ωdc = Mdc/(Iγ) is the average rotation frequency and φ = tan−1(−ωm/γ). The rotational damping rate γ can be measured experimentally. We can suddenly turn on the 1020 nm laser and measure the rotation frequency as a func- tion of time (Fig. 3(a)). The collected data is fit with an ex- ponential curve ω = ω1 + (ω2 − ω1)(1 − e− t−t1 τ ). Here, ω1 is the initial rotation frequency, ω2 is the terminal rotation fre- quency, t1 is the time when the 1020 nm laser is turned on, and τ = 1/γ is the damping time. From the fitting, we determine the damping time. The measured damping time at different pressures are plotted in Fig.3(b). Then the external AC torque Mac can be measured by observing the change of the rotation frequency ωr(t) as a function of time. The sensitivity of mea- suring an external torque will be limited by the thermal noise torque Mth. Including the effects of the thermal noise, the single-sided power spectrum density of the time-dependent angular veloc- ity (ωr − ωdc) for a measurement time of ∆t is Sf (ω) = 4kBT γ I[ω2 + γ2] + ac∆t sinc2[(ω − ωm)∆t/2] M 2 2I 2[ω2 + γ2] . (2) ∆t kB is the Boltzmann constant, and T is the temperature. Note that Sf (ω) can be calculated from the time-dependent rotation frequency ωr/2π (Fig. 3(c)) measured by a spectrum analyzer directly. This is very different from the case of the center-of- mass motion, where a calibration factor is required to convert a measured voltage signal to the real position [29]. From the Sf (ω) at the modulation frequency, we can measure the exter- nal AC torque applied to the nanorotor. Because of the ther- mal noise, the minimum external torque that can be measured is Mmin = (cid:113) 4kB T Iγ [28, 30]. We now measure the external torque exerted by the cir- cularly polarized 1020 nm laser according to Eq. 2. We modulate the laser power with a sinusoidal signal at 200 mHz while we measure the rotational PSD of the nanoro- tor in real time (bottom subfigure in Fig.3(c)). For refer- ence, we simultaneously monitor a RF signal generated by a voltage-controlled oscillator modulated sinusoidally at the same time (top subfigure in Fig.3(c)). We repeat the mea- surement for different modulation amplitudes. Each measure- ment takes 100 seconds. The resulting PSD of the angular velocity (ωr − ω0) are shown in Fig.3(d). We can then cal- culate the amplitude of the external torque using the PSD and the measured damping time. The minimum resolvable torque corresponds to the value obtained with no modula- tion. This is about 6 × 10−28 Nm for a measurement time FIG. 1. Experimental schematic and rotation spectra of an opti- cally levitated nanoparticle. (a) A silica nanoparticle (NP) is levi- tated in vacuum with a 500 mW, 1550 nm laser tightly focused by an objective lens (OBJ) with NA = 0.85. An additional 1020 nm laser is used to apply an external torque on the nanoparticle. The polarization of each laser is controlled with a quarter waveplate (λ/4). After the collimation lens, the trapping laser is directed to detectors for moni- toring the motion of the trapped nanoparticle. DM: dichroic mirror; λ/2: half waveplate; PBS : polarizing beam splitter; DET: balanced photo detector. Inset: SEM images of a silica nanosphere (left) and a silica nanodumbbell (right). The scale bar is 200 nm for both im- ages. (b) A measured power spectral density (PSD) of the rotation of an optically levitated nanoparticle at 10−4 torr. The frequency of the PSD peak is twice the rotation frequency of the nanoparticle. (c) A spectrogram (time trace) of the rotation PSD of an optically lev- itated nanoparticle recorded for 100 seconds. The first vertical line corresponds to the PSD shown in (b). a.u.: arbitrary units. drives it to rotate [18, 19]. The rotation speed is determined by the balance between the optical torque and the drag torque from the surrounding air. Thus the rotation speed is inversely proportional to the air pressure, as shown in Fig. 2(c). The rotation speed of a nanodumbbell is much faster than that of a nanosphere with the same diameter in the same trap at the same pressure. This is because the optical torque on the nan- odummbell is much larger than that on the nanosphere due to their different shapes. Fig.2(d) shows the fastest rotation fre- quency observed in our experiment so far. The rotation rate reaches 5.2 GHz at 1.23 × 10−5 torr before the nanoparticle is lost from the optical trap. This is the fastest nanorotor re- ported to date. Besides observing the fastest rotation, we employ the nanorotor as an ultrasensitive torque sensor. To test its per- formance, we use an additional 1020 nm laser to apply an ex- ternal torque. If we modulate the 1020 nm laser sinusoidally, the net torque applied on the nanorotor is Mdc + Mac sin(ωmt) + Mth − Iγωr = I ωr (1) 𝜆/4 𝜆/4 𝜆/2 PBS DM OBJ DET 1550 nm 1020 nm NP a b Frequency (MHz) 40 20 PSD (a.u.) 40 20 0 100 Time (s) PSD (a.u.) c Frequency (MHz) Lens 3 FIG. 2. Vibration and fast rotation of optically levitated silica nanospheres and nanodumbbells. PSD's of the motions of a silica nanosphere (a) and a nanodumbbell (b) trapped by a linearly polarized laser at 10 torr. The ratios of the damping rates in directions perpen- dicular (y) and parallel (x) to the electric field of the laser are 1.02 ± 0.01 and 1.23 ± 0.02 for the nanosphere (a) and nanodumbbell (b), respectively. Also, an additional torsional peak appears for the nanodumbbell which does not show for the nanosphere. z axis is parallel to the propagating direction of the laser. (c) The rotation frequencies of a nanodumbbell (blue squares) and a silica nanosphere (green circles) in a circularly polarized optical tweezer as a function of the air pressure. The solid lines show the 1/p dependence of the rotation frequencies, where p is the air pressure. The diameters of the nanosphere and the nanodumbbell are about 150 nm. (d) Rotation frequency as a function of pressure for a nanoparticle with a large ultimate rotation frequency. The solid line shows the 1/p dependence of the rotation frequency. Inset: A measured PSD of the rotational motion. The PSD peak at 10.4 GHz corresponds to a mechanical rotation frequency of 5.2 GHz. √ of 100 seconds at 10−5 torr. This corresponds to a mea- √ sured sensitivity of 6 × 10−27Nm/ Hz, which is compa- rable to the theoretical thermal-noise limited sensitivity of 3×10−27Nm/ Hz at 10−5 torr at 300K. The measured sensi- tivity is several orders improved compared to the state-of-the- art nanofabricated torque sensor in a cryogenic environment [6]. As shown in Fig.3(e), we measured an external torque as small as (1.2± 0.5)× 10−27Nm when the modulation ampli- tude is 0.15 V. One important application of our ultrasensitive torque sen- sor with an optically levitated nanorotor will be to detect the long-sought vacuum friction [7 -- 10]. Quantum and thermal vacuum fluctuations will create instantaneous charges on the surface of an otherwise neutral nanosphere. If the nanosphere rotates at a high speed, these instantaneous charges will gener- ate radiation, which causes a noncontact friction. The vacuum friction is extremely weak in free space [8], but can be en- hanced by a nearby surface with a large local density of elec- tromagnetic states [9, 10]. We perform numerical calculations to find the suitable conditions to detect the vacuum friction. Assuming that a nanosphere is located at a distance d from the surface and rotates at an angular velocity of Ω around an axis parallel to the substrate, the vacuum frictional torque is [9, 10]: (cid:90) ∞ π −∞ Mvac = − 2 [n1(ω − Ω) − n0(ω)] × Im[α(ω − Ω)] Im[ ¯G(ω)]dω (3) where nj(ω) = [exp(ω/kBTj) − 1]−1 is the Bose-Einstein distribution function at temperature Tj. For simplicity, we assume the temperatures of the nanosphere (T1) and the sub- strate (T0) are the same in our calculation. α(ω) is the elec- trical polarizability of the nanosphere. ¯G(ω) = [Gxx(ω) + 10-610-510-410-310-310-210-11001011x10-52x10-55x10-51x10-40.5251Frequency (GHz)Pressure (Torr)1011Frequency (GHz)PSD (a.u.)Frequency (GHz)Pressure (Torr)Frequency (Hz)Frequency (Hz)cdabPSD (a.u.)PSD (a.u.)NanodumbbellNanosphere4 FIG. 3. Ultrasensitive detection of an external torque. (a) A spectrogram of the rotation of a trapped silica nanosphere at 9.4 × 10−6 torr. After the 1020 nm laser is turned on at 8 s, the rotation frequency increases until its maximum is reached. The frequency trace is fit to an exponential curve to obtain the rotational damping time. (b) The damping time of the rotation as a function of air pressure. The solid line shows 1/p dependence. (c) The bottom subfigure shows a rotation spectromgram of the levitated nanosphere under a sinusoidally-modulated external torque. Data was collected at 1.5 × 10−5 torr. The frequency and amplitude of the modulation signal that controls the power of the laser is 200 mHz and 2V. 1V corresponds to approximately 75 mW of laser power. For comparison, a RF signal generated by a voltage-controlled oscillator controlled by the same modulation signal is shown in the top subfigure. (d) PSD of the time trace of the rotation frequency. Peaks are due to the modulated external torque. The red dashed line and the blue solid line correspond to a modulation amplitude of 2 V and 250 mV, respectively. (e) Measured torque for different modulation amplitudes. When the modulation amplitude is 150 mV, the external torque is measured to be (1.2 ± 0.5) × 10−27 Nm. Gyy(ω)]/2, where Gxx and Gyy are electromagnetic Green tensor components [9]. z is the axis of rotation. From Eq. 3, we can find that the imaginary part of the polarizability con- tributes to the vacuum friction. We calculate the vacuum frictional torque on a 75 nm- radius silica nanosphere near three different substrates (sil- ica (SiO2), Si3N4, and SiC) at different separations and tem- peratures (Fig. 4). These materials support phonon polari- tons. Their dielectric functions can be descibed by the Drude- Lorentz model [9, 10, 31]. For rotation frequencies much smaller than kBTj/, Mvac is proportional to the rotation fre- quency. Inspired by our experimental results, we assume the rotation frequency to be 1 GHz in the calculation. As shown in Fig. 4(a), a silica surface will give the largest vacuum friction for a rotating silica nanosphere because their phonon polariton modes match. The vacuum frictional torque can be close to 10−27 Nm at small separations, which is comparable to what we have measured in this experiment. Smaller torques can be measured at lower pressures and for longer times. We also cal- culated the air damping torque on a rotating nanosphere due to residual air molecules in the vacuum chamber at different pressures. The vacuum friction increases when the tempera- ture increases, while the air damping torque decreases when the temperature increases if the air presure is constant (Fig. 4(b)). At 10−9 torr, the vacuum frictional torque is larger than the air damping torque when the temperature of the subrate and the nanosphere is larger than 350K at 200 nm separation, or larger than 590 K at 300 nm separation. These tempera- tures should be easy to achieve. Similar pressures have also been achieved in levitation experiments [15, 32]. Therefore, the detection of the vacuum friction with an optically levitated nanorotor torque sensor is feasible under realistic conditions. In conclusion, we have demonstrated an ultrasensitive torque sensor with an optically levitated nanorotor in vacuum. We measure a record small torque of (1.2 ± 0.5) × 10−27Nm and achieve a record high rotational speed exceeding 5 GHz for a nanorotor. The measured torque sensitivity of our system at room temperature is several orders better than that of the state-of-the-art nanofabricated torque sensor at mK tempera- tures [6]. Our system will be suitable to detect the quantum vacuum friction [7 -- 10]. If the rotating nanoparticle contains an electron spin (e.g. a diamond nitrogen-vacancy center), it can study the quantum geometric phase [11]. It can also study nanoscale magnetism, especially the Einstein-de Haas effect and the Barnett effect [3]. ACKNOWLEDGMENTS We thank helpful discussions with F. Robicheaux, T. Se- berson, R. Zhao, Z. Jacob, Q. Han, and R. M. Ma. 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1807.07491	1	1807	2018-07-19T15:26:05	A First Look at the Performance of Nano-Grooved Heat Pipes	[ "physics.app-ph" ]	Passive thermal spreaders utilizing liquid/vapor phase-change mechanism such as heat pipes, have been widely used in the macro-scale thermal management of electronic devices for many years. Micro-fabrication techniques enabled the fabrication micro-scale grooved heat pipes on semiconductors. Recent advances in fabrication techniques, on the other hand, enabled producing nano- and {\AA}ngstr\"om-scale capillaries and cavities, which renders the manufacturing of nanoscale heat pipes possible. In the present study, we have simulated nanoscale heat pipes composed of nano-grooves using molecular dynamics and evaluated their performance based on different operating parameters such as the filling ratio and heat load. Moreover, evaluation of size effect on the thermal performance is made by comparing proportionally scaled heat pipes. Simulation results reveal that efficient operation of nano-grooved heat pipes depend not only on the proper selections of filling ratio and heat load, but also on the geometrical parameters such as cross sectional dimensions and aspect ratio of the groove. The modeling strategy used in this study opens an opportunity for computational experimentation of nanoscale heat pipes.	physics.app-ph	physics	Nano-Grooved Heat Pipes Akkus et al. A First Look at the Performance of Nano-Grooved Heat Pipes Yigit Akkusa,b, Chinh Thanh Nguyena, Alper Tunga Celebia, Ali Beskoka∗ aLyle School of Engineering, Southern Methodist University, Dallas, Texas 75205, USA bASELSAN Inc., 06172 Yenimahalle, Ankara, Turkey Abstract Passive thermal spreaders utilizing liquid/vapor phase-change mechanism such as heat pipes, have been widely used in the macro-scale thermal management of electronic de- vices for many years. Micro-fabrication techniques enabled the fabrication micro-scale grooved heat pipes on semiconductors. Recent advances in fabrication techniques, on the other hand, enabled producing nano- and angstrom-scale capillaries and cavities, which renders the manufacturing of nanoscale heat pipes possible. In the present study, we have simulated nanoscale heat pipes composed of nano-grooves using molecular dynamics and evaluated their performance based on different operating parameters such as the filling ratio and heat load. Moreover, evaluation of size effect on the thermal performance is made by comparing proportionally scaled heat pipes. Simulation results reveal that effi- cient operation of nano-grooved heat pipes depend not only on the proper selections of filling ratio and heat load, but also on the geometrical parameters such as cross sectional dimensions and aspect ratio of the groove. The modeling strategy used in this study opens an opportunity for computational experimentation of nanoscale heat pipes. Keywords: Nano heat pipe, Nanoscale two-phase heat spreader, Molecular dynamics, Scale effect, Thermal performance, Filling ratio 1 Introduction Transistor density on an integrated circuit (IC) has been steadily increasing as suggested by Gordon Moore more than half a century ago [1]. Reduction in the size and increase in the com- ponent density lead to enormous heat flux values for today's electronic and photonic devices. For instance, radiofrequency monolithic microwave ICs using GaN high-electron-mobility tran- sistors can generate a heat flux of 1000 kW/cm2 at the gate area [2, 3]. Thermal management of high heat flux (HHF) devices is vital to realize the proper functioning without deterioration of performance and longevity. It should be stated that, system-level thermal management is not the critical issue due to the availability of capable conventional cooling methods [4]. Chip-level ∗e-mail: [email protected] 1 8 1 0 2 l u J 9 1 ] h p - p p a . s c i s y h p [ 1 v 1 9 4 7 0 . 7 0 8 1 : v i X r a Nano-Grooved Heat Pipes Akkus et al. cooling, on the other hand, is the major bottleneck for proper functioning of devices due to the formation of local hot spots with large on-chip temperature gradients [5, 6]. Thermal scientists have long been seeking efficient techniques to cool HHF devices. Single- phase cooling methods are impractical due to the high temperature difference and pumping needs [7]. Phase-change methods are desirable addressing their advantage in high latent heat of evaporation, which enables removal of high amount of heat with small temperature differ- ence. Passive thermal spreaders utilizing liquid/vapor phase-change mechanism such as vapor chambers and heat pipes, are widely used in electronic cooling. Closed loop circulation of the working fluid is provided by the capillary pumping in liquid phase and density gradient in the vapor phase. While the vapor chambers have excellent hot spot removal ability by transport- ing the localized heat from a source to a large heat rejection surface, heat pipes function as superconductors to remove the waste heat away from the source. The first heat pipe was using wire mesh wick structure to pump the condensate to the evaporator section [8]. Then a single sealed non-circular micro-channel, whose sharp-angled corners work as liquid arteries, was proposed as micro heat pipes [9]. To increase the heat carrying capacity of a heat pipe, the number of liquid arteries should be maximized. Conse- quently, grooved heat pipes, which utilize multiple grooves machined on the inner wall of the base metal as the wick structures, have emerged and been widely studied in the literature due to the relative ease of their precise manufacturing and developing numerical solutions to estimate their performance [10, 11, 12, 13, 14, 15, 16, 17]. Moreover, micro-electro-mechanical systems (MEMS) based micro-fabrication techniques enabled the fabrication of micro scale grooves on semiconductors, which opened an opportunity for direct integration of heat pipes onto elec- tronic/optoelectronic chips [18, 19, 20]. Furthermore, extreme miniaturization in semiconduc- tor devices may require thermal management solutions in the nanoscale. While the potential benefits of nano- and atomic-scale fluid flow (e.g. large slip lengths, ballistic gas transport) [21, 22, 23, 24] and nanoscale ultra fast evaporation [25, 26] promote the possible applications of nanoscale phase-change thermal management devices, the main hurdle seems to be the fabri- cation and integration of nanoscale capillaries. For example, carbon nanotubes (CNTs) provide exceptional structural, electrical, and thermal properties at nanoscale, but it is still difficult to integrate these superior properties in macroscopic devices [25]. On the other hand, recent fabrication techniques enabled production of nano- and angstrom-scale capillaries and cavities using top-down approach, which made the integration of nanoscale details onto larger scale devices possible [24, 25, 26]. At the nanoscale, liquids exhibit density fluctuations due to the wall-force-field effect. Ap- parent viscosity [27] and density [28] deviate from their bulk fluid properties. Vapor flow in nano-confinements require kinetic theory based modeling either in the transition or free molecu- lar flow regimes. Influence of interfacial thermal resistance becomes important [29], liquid-solid 2 Nano-Grooved Heat Pipes Akkus et al. contact angle exhibits considerable variations [30], and capillary pumping mechanism result- ing from the meniscus deformation may extinguish due to the annihilation of liquid meniscus structures [31] at the nanoscale. Therefore, performance prediction of a nano-grooved heat pipe is not straightforward. Combined effect of the afore-mentioned nanoscale factors can be only addressed using atomistic level simulations. Motivated by the recent advances in nano-fabrication techniques, extreme miniaturization trends in semiconductor industry, chip-level thermal management needs and potential benefits of nanoscale mass and energy transport, we investigate transport in nanoscale heat pipes with nano-grooves. Our ultimate objective is to develop a computational setup for performance characterization of a nano-grooved heat pipe. Using this setup, the effects of filling ratio and heat loads on the working performance are evaluated. Moreover, assessment of size effects on the working performance is performed by comparing proportionally scaled heat pipes. To the best knowledge of authors, current study presents the first computational work on nano-grooved heat pipes. Previous attempts were using surfaces of a post wall [32] and sharp-angled corners [29] as liquid arteries between two reservoirs. Moreover, assessment of design and operating parameters on the thermal performance of nanoscale heat pipes are investigated for the first time in the literature. 2 Performance prediction in continuum scale The current study evaluates the performance of proportionally scaled heat pipes in order to assess the size effect on the working characteristics. To perform such an analysis, geomet- ric similarity between different sized heat pipes should be secured. Therefore, before starting computational experiments on different sized systems, we estimate the continuum scale perfor- mance of a grooved heat pipe by conducting a flow and evaporative mass analysis on a single half groove shown in Fig. 1. The mass flow rate of a pressure induced laminar liquid flow in an open channel is propor- tional to the height, h, width, w, and the pressure gradient along the channel: If the flow is driven by a capillary pressure gradient resulting from the asymmetric menisci at m ∼ h2w2 dp dy . (2.1) both ends of the groove, pressure gradient can be approximated using Young-Laplace equation: (cid:16) 1 dp dy (cid:39) σ L (cid:17) − 1 Rev Rco , (2.2) where σ and L are the surface tension coefficient and the effective length of the groove, respec- tively. Radius of curvature, R, can be written as the functions of apparent contact angle, θ, 3 Nano-Grooved Heat Pipes Akkus et al. Figure 1: Single (half) heat pipe groove with geometrical and thermal parameters. and groove width, w, Combination of Eqn. (2.1), Eqn. (2.2) and Eqn. (2.3) yields the mass flow rate, m, as the R = w/2 cos (θ) . (2.3) functions of apparent contact angles formed at the condenser and evaporator regions: (cid:104) (cid:105) m ∼ h2w L cos (θev) − cos (θco) . (2.4) Heat pipes use the phase-change mechanism to remove heat from the source. Liquid turns into vapor by absorbing heat from the source at the evaporator section. Then vapor travels along the heat pipe and condenses back into liquid phase by releasing its energy in the form of latent heat at the condenser section. However, heat conduction through the base material, liquid, and vapor also takes place simultaneously. The efficacy of a heat pipe is preserved as long as the phase-change is the dominant heat transfer mode. Therefore, the ratio of energy transferred by phase-change, qp.c., to the energy input at the evaporator, q, reflects the efficiency of a heat pipe: η ≡ qp.c. q . (2.5) The evaporating mass flow rate is equal to the liquid mass flow rate along the groove during the steady operation of the heat pipe. Therefore, the amount of energy removed from the liquid/vapor interface by phase-change mechanism can be written in terms of the liquid flow rate and heat of vaporization, hfg, as follows: qp.c. = mhfg . 4 (2.6) Nano-Grooved Heat Pipes Akkus et al. When Eqn. (2.4) and Eqn. (2.6) are inserted to Eqn. (2.5), efficiency of the heat pipe can be demonstrated as the functions of both heat inputs and system geometry. After some algebraic manipulations, the efficiency can be shown as follows: η ∼ (cid:16) q (cid:17)−1(cid:16) e (cid:17)−1(cid:16) L (cid:17)−1(cid:104) ew h h (cid:105) cos (θev) − cos (θco) (2.7) where e is the length of the region, where heat is added. The first term at the right hand side is simply the heat flux applied to the liquid at the evaporator, q(cid:48)(cid:48). The second and third terms are scaled heat addition length, e∗, and aspect ratio of the groove, L∗, respectively. Therefore, Eqn. (2.7) can be written in terms of these parameters as follows: η ∼ ( q(cid:48)(cid:48))−1(cid:104)cos (θev) − cos (θco) (cid:105) e∗L∗ . (2.8) Eqn. (2.8) implies that if the heat flux applied and geometric similarity of the system are pre- served, the heat pipe should exhibit similar performance. Therefore, while we are proportionally scaling down the system, we also keep the heat flux same by decreasing the heat input to the system during simulations. In other words, while we are decreasing the groove dimensions and heat input (L, h, e and q), we preserve the geometric and thermal similarity terms (L∗, e∗ and q(cid:48)(cid:48)). 3 Simulations Two proportionally scaled nano-grooved flat plate heat pipes are investigated. Heat pipes are modeled using molecular dynamics (MD) simulations. Schematic of the heat pipes is shown in Fig. 2. The values of the dimensions in the schematic are specified in Table 1. In general, a grooved flat plate heat pipe uses multiple axial grooves as liquid arteries to deliver the condensate to the evaporator. To create a nano-grooved heat pipe in MD environment, firstly, we construct a cell structure (the simulation domain) composed of two symmetric grooves with closed ends. Lateral and longitudinal cross sections of the cell structure are shown in Fig. 2b and Fig. 2c, respectively. Then, periodic boundary condition is applied in x-direction, which replicates the simulation domain throughout x-direction to form an infinite array of grooves, i.e. the nano-grooved heat pipe, as shown in Fig. 2a. Therefore, the cell structure is used as the simulation domain and computational experiments are carried out on this domain to evaluate the working characteristics and performance of the heat pipe. The number of solid (Pt) atoms are 45,456 and 12,620 for Heat Pipe-1 (HP-1) and Heat Pipe-2 (HP-2), respectively. To assess the effect of filling ratio, different amounts of fluid (Ar) are added to the heat pipes. While HP-1 is filled with Ar within the range of 11,000–35,000 atoms, HP-2 is tested with 1,600–4,800 Ar atoms. In each system, walls of the simulation domain are composed 5 Nano-Grooved Heat Pipes Akkus et al. Figure 2: Schematic of the nano-grooved flat plate heat pipe composed of Platinum walls (gray spheres) and filled with Argon (blue spheres) as the working fluid. (a) A portion of the lateral cross-section of nano-grooved heat pipe. Purple lines indicate the computational domain. Heat pipe geometry is formed by the periodic images of the computational domain in x-direction. (b) Lateral cross-section of the computational domain. (c) Longitudinal cross-section of the computational domain. Red and turquoise spheres show the Platinum atoms subjected to energy injection and extraction at the evaporator and condenser sections, respectively. of 3 solid layers and (1,0,0) crystal planes face the fluid. The outermost layers of the walls are always fixed at their lattice positions. Time step is 5 fs and each collected data is averaged for 1 ns. The interactions between Ar-Ar and Ar-Pt atoms are modeled using Lennard-Jones (L-J) (cid:34)(cid:16) σ rij (cid:35) (cid:17)6 (cid:17)12 −(cid:16) σ rij 6-12 potential: φ(rij) = 4ε . (3.1) Molecular diameters and depth of the potential wells for the interactions are: σAr = 0.34 nm, σAr−P t = 0.3085 nm and εAr = 0.01042 eV, εAr−P t = 0.00558 eV [33]. L-J potential is truncated with a cut-off distance of 2.6σAr. Pt-Pt atomic interactions are modeled using embedded atom model [34]. Simulations are started from the Maxwell-Boltzmann velocity distribution for all atoms at 110 K. First, Nos´e-Hoover thermostat (NVT ensemble) is applied to all atoms (except the out- ermost atoms covering the surface of the walls) for 20 ns to stabilize the system temperature at 6 (cid:1)(cid:2)(cid:3)/(cid:5)(cid:3)/(cid:5)(cid:6)(cid:7)(cid:8)(cid:3)AAA-A(b)(c)(a).+(cid:10)(cid:5).−(cid:10)(cid:5).−(cid:10)(cid:5)BBB-B(cid:12)(cid:3)/(cid:5)(cid:13)(cid:14)(cid:15)(cid:14).+(cid:10)(cid:5)Nano-Grooved Heat Pipes Akkus et al. Table 1: Dimensions of the heat pipes w [nm] h [nm] e [nm] t [nm] P [nm] H [nm] L [nm] Heat Pipe-1 Heat Pipe-2 3.920 1.960 3.136 1.568 7.840 3.920 0.784 0.784 4.704 2.744 10.976 5.880 51.744 26.264 110 K. Then, microcanonical (NVE) ensemble is applied to Ar atoms for 20 ns to equilibrate the system, while wall atoms are still subjected to the thermostat. At the end of the equilibration period, stable liquid/vapor Ar mixture is obtained at 110 K. While saturated Argon condenses within grooves due to the interaction of fluid atoms with solid wall atoms, vapor phase of Argon occupies rest of the simulation domain. Operation of the heat pipe is initiated with application of equal energy injection and extrac- tion to the solid atoms located at the evaporator and condenser sections, respectively. During heating/cooling, Ar atoms are subjected to NVE ensemble. Heat transfer to/from the heat pipe is performed by energy injection/extraction from solid atoms instead of thermostat application. This method eliminates the non-physical temperature jump caused by thermostats [35]. More- over, zero net heat transfer to the heat pipe is secured by this approach. Before the collection of the data, heat pipe is allowed to operate for 60 ns, which is substantially longer than the diffusion time scales of momentum, L2/ν, and heat, L2/α, where ν and α are the kinematic viscosity and thermal diffusivity, respectively. Simulations are ceased at the end of 500 ns heat operation. Statistically stable liquid/vapor interface profile ensures steady state fluid circula- tion within the heat pipe. All simulations are carried out using Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) [36]. 3.1 Selection of working fluid Selection of working fluid is critical for proper functioning of a heat pipe. In order to create a capillary pumping mechanism, working fluid should be compatible with the wall material, i.e. liquid phase must wet the solid surface [37, 38]. Wettability of liquid Ar on Pt surface was confirmed in previous studies [39, 40] for LJ potential parameters utilized in the current work. Another reason of the selection of Ar is its high vapor pressure. The number of vapor atoms in the gas phase should be large enough for accurate statistical averaging. Due to the computational cost of MD simulations, only a limited number of atoms/molecules can be simulated within restricted time spans. Therefore, selection of a fluid with high vapor pressure is inevitable. For instance, water, which is generally utilized in thermal engineering applications, is not a good choice for MD simulations due to its relatively low volatility. Saturated water mixture in equilibrium at room temperature has the ratio of ∼ 1/50, 000 vapor to total water 7 Nano-Grooved Heat Pipes Akkus et al. Figure 3: Density distribution and interface profiles in HP-1 under 1.0 nW heat load with the filling ratio of 0.43. (a) Density distribution along the groove axis on the central y-z plane. Density distributions on x-z plane near (b) evaporator and (c) condenser. Planes are L/6 distance away from heat pipe ends. (d) Liquid/vapor interface profiles near evaporator (circular marks) and condenser (triangular marks). Data points are connected with smooth lines to guide the eye. Starting from the outer gas phase region, density of each bin is checked in z-direction and the first bins, where the bin density exceeds the cut-off density (375 kg/m3), are marked as the liquid/vapor interface. Cutoff density is selected to be slightly higher than the density of the bin at groove-fin top corner. molecules, which is unfavorable for MD simulations conducted in nanoscale volumes. Saturated Ar, on the other hand, has the ratio of ∼ 1/40 vapor to total Ar atoms at 110 K temperature. 4 Results and Discussions Initial simulations are performed on HP-1 for different filling ratios. When all the inner space of the heat pipe is filled with the liquid phase, i.e. fully flooded operation, the filling ratio is taken as unity. For the other cases, saturated liquid and vapor phases coexist, and the ratio of total mass of the two phases to the liquid mass during fully flooded operation defines the filling ratio of the heat pipe. Time-averaged density distribution in the heat pipe during a steady operation with filling ratio of 0.43 under 1.0 nW heat load is given in Fig. 3a-c at different cross-sections. Variation of the liquid/vapor interface profile along the groove axis is demonstrated by the density distribution on the central y-z plane (Fig. 3a). Relative equilibrium amount of liquid is higher at the condenser due to mass accumulation. Near the side wall of the condenser, the 8 NNMMM-M(a)(b)N-N(c)(d)ρ(kg.m-3)(nm)(cid:1)(nm)(cid:2)0.00.51.01.52.02.53.03.54.0-2.0-1.5-1.0-0.50.00.51.01.52.0Nano-Grooved Heat Pipes Akkus et al. liquid phase occupies the space between the grooves and makes a liquid bridge. This bridge has a circular interface with the vapor phase due to surface tension. At the evaporator region, the amount of liquid is not enough to form a continuous bridge, instead, two separate menisci form between the side wall and both grooves. The menisci are connected by an adsorbed liquid layer on the side wall surface. Liquid height at the center of the groove decreases gradually towards the evaporator. Distributions of the two phases between groove walls near the condenser and evaporator regions are shown in Fig. 3b and Fig.3c, respectively. Argon condenses within the grooves and vapor phase occupies the rest. Molecular layering of liquid is apparent near the side and outer walls with two distinct layers. The interface profile between liquid and vapor is determined based on a cutoff density and plotted for the both cases in Fig. 3d. Both interfaces are attached to the edges of the sidewalls eliminating the possibility of a dryout or corner flow [41]. Near the side walls, strong molecular layering of liquid affects the interface profile especially near the evaporator. Away from the walls, cohesion forces (surface tension) bend the interface and lead to the formation of meniscus structures. Meniscus is less apparent at the interface near condenser due to the thicker liquid film. Although curvature of each meniscus cannot be determined by a constant value due to the strong liquid-solid interaction, effective radius of curvatures of two menisci is appreciably different suggesting the presence of a capillary pumping mechanism between evaporator and condenser. Moreover, there exists a density difference between the liquid phases (especially visible in near-wall layers [42]), which indicates the presence of molecular diffusion together with the capillary pumping to convey the liquid from condenser to evaporator [31]. Heat pipes use the advantage of phase-change to transfer thermal energy, which enables them to operate with small temperature differentials. Therefore, the ratio of energy transferred by the phase-change mechanism should be as high as possible. In other words, axial conduction should be minimized to realize an efficient operation with a small temperature gradient. Heat is conducted through both fluid and solid media within the heat pipe, but the latter dominates the former one due to the difference of thermal conductivity. The conduction heat transfer rate through solid walls between evaporator and condenser is calculated during simulations in order to make a performance assessment and its variation with the filling ratio is shown in Fig. 4a under a heat load of 1.0 nW . Similar its macro-scale experimental counterparts [12, 13, 14, 16, 17], our computational results reveal that the nano-grooved heat pipe exhibits an optimum performance at a certain filling ratio. While the lesser amount of fluid causes an increase in conduction heat transfer due to the deficit of phase-changing fluid, which eventually leads to the occurrence of dryout (dry regions in evaporator), higher amount of fluid leads to the decrease in the rates of phase-change because of the higher thermal resistance of thicker liquid films at the evaporator and condenser [43, 44, 45, 46, 47]. The effect of heat load on the thermal performance is investigated and the heat pipe efficiencies (η), calculated based on the 9 Nano-Grooved Heat Pipes Akkus et al. Figure 4: Performance evaluation of HP-1. (a) Conduction heat transfer rate through walls vs. filling ratio under 1.0 nW heat load. (b) Heat pipe efficiency vs. heat input (load) for the filling ratio of 0.43. ratio of heat transfered by the phase-change mechanism to the total heat load (Eqn. (2.5)), are presented in Fig. 4b. Performance of the heat pipes (and the the associated uncertainties) increase with smaller heat inputs in accordance with [12, 16]. However, efficiency of HP-1 is appreciably low for all heat inputs, indicating a conduction heat transfer dominant operation. The reason of this behavior lies in the fact that aspect ratio of the grooves (L/h=16.5) is extremely small in the simulations with respect to that in conventional heat pipes (∼ 102–104). Thus, thermal resistance of conduction heat transfer is relatively low in HP-1. Simulation of a heat pipe with the groove aspect ratio similar to ones in conventional heat pipes is not possible due to the limits of the current computational power. However, conduction heat transfer through the walls can be prevented by manipulating the solid atoms. Therefore, instead of constructing a long heat pipe, we halted thermal vibrations of Pt atoms between the evaporator and condenser sections to mimic a sufficiently large conduction resistance such that all heat is transferred by phase-change mechanism and the conduction through fluid media. HP-1 with adiabatic mid section is simulated for different filling ratios under various heat inputs. We utilize the thermal resistance between evaporator and condenser sections (Rth) for 10 0.850.900.951.000.30.40.50.60.70.80.91.0(a)(b)Filling ratioConduction heat transfer (nW)Efficiency (%)Heat input (nW)036912151.0 2.0 3.0 4.0Nano-Grooved Heat Pipes Akkus et al. Figure 5: Performance evaluation of HP-1 with adiabatic walls between evaporator and con- denser. (a) Thermal resistance vs. filling ratio for various heat inputs. (b) Effectiveness of the heat pipe operation vs. heat input. the assessment of thermal performance [10, 11, 12, 13, 14, 15]. Temperatures of the evaporator (Tev) and condenser (Tco) sections are calculated based on the average temperature of Pt atoms subjected to energy injection and extraction, respectively. Temperature difference (∆T = Tev − Tco) is divided by heat input to calculate the thermal resistance, i.e., Rth = ∆T / q. Thermal resistance variations of the heat pipe with filling ratios under different heat inputs are shown in Fig. 5a. All the curves intersect at the fully flooded case, where the heat is transfered only via conduction through the liquid phase, and the effective conductivity of the heat pipe is almost same regardless of the heat load applied. For the dry case, thermal resistance would be infinite due to the absence of any mechanism to convey the heat. Therefore, every curve extends between the same limits in Fig. 5a. However, these curves fall into two different groups in terms of their variation trends. For smaller heat inputs (0.10 nW, 0.15 nW, 0.30 nW), each simulation reveals an optimum operating point similar to the operation of HP-1 with conductive mid section. The optimum filling ratio was the same for HP-1, 0.43, regardless of 11 (a)(b)Filling ratioThermal resistance (K/nW)EffectivenessHeat input (nW)481216202428323640440.30.40.50.60.70.80.91.00.10 nW0.15 nW0.30 nW0.50 nW0.75 nW1.00 nW0.00.51.01.52.02.53.00.000.250.500.751.00Nano-Grooved Heat Pipes Akkus et al. Figure 6: Thermal resistance vs. filling ratio for HP-2 for different heat inputs. Inset shows the thermal resistance variation HP-1 for the heat input of 0.1000 nW. Operation of HP-2 shown by orange dashed line has the same heat flux input with the operation of HP-1 shown by the inset. the heat input [14, 16]. For higher heat inputs (0.50 nW, 0.75 nW, 1.00 nW), on the other hand, minimum thermal resistance is achieved at the filling ratio of 1.0 without exhibiting any dip between dry and fully flooded operations. This behavior shows that majority of the heat is transferred by axial conduction through the fluid media for higher heat loads. Therefore, heat pipe does not function properly, and the benefit gained by phase-change becomes restricted at elevated heat inputs, i.e., heat pipe is overloaded. In order to draw a clearer picture on the efficacy of heat pipe operations, we utilize an effectiveness parameter (ε) based on the ratio of thermal resistance during fully flooded operation (Rf.f. th ) to that of heat pipe during optimum phase-change operation (Ropt. th . The effectiveness is a function of the heat input and filling ratio for a given design [16]. The effectiveness values for HP-1 th ), i.e., ε = Rf.f. th /Ropt. with adiabatic mid section are shown in Fig. 5b, and an effectiveness value smaller than unity implies that heat transfer in the device is not dominated by phase-change. On the other hand, effectiveness of the heat pipe operation increases with diminishing heat loads. However, operational effectiveness should not be interpreted as the sole factor determining the general efficacy of the heat pipe. Further reduction in heat input may improve the effectiveness value by decreasing the temperature difference between evaporator and condenser, but the amount of heat removal would be less in that case. Therefore, general efficacy of the heat pipe is actually determined by the compromise between the amount of waste heat desired to be removed and the allowable temperature difference between heat source and external coolant. 12 Filling ratioThermal resistance (K/nW)-1001020304050607080901000.30.40.50.60.70.80.91.0HP-2; 0.0250 nWHP-2; 0.0125 nW-606121824300.200.601.00HP-1; 0.1000 nWNano-Grooved Heat Pipes Akkus et al. Figure 7: Density distribution and interface profile in HP-2 with adiabatic mid section under 0.0250 nW heat load with the filling ratio of 0.396. (a) Density distribution along the groove axis on the central y-z plane. (b) Density distribution on x-z plane near evaporator/condenser. Density distribution is almost same within the mid section between evaporator and condenser. Therefore, single plot is provided. (c) Liquid/vapor interface profiles near evaporator (diamond) and condenser (triangle). Interface profiles are exactly same. Data points are connected with smooth lines to guide the eye. Starting from the outer gas phase region, density of each bin is checked in z-direction and the first bins, where the bin density exceeds the cut-off density (365 kg/m3), are marked as the liquid/vapor interface. Cutoff density is selected to be slightly higher than the density of the bin at groove-fin top corner. HP-1 is scaled down by a factor of 2 (HP-2) to assess the size effect on the working per- formance. The most effective operation of HP-1 (with adiabatic mid section), which occurs under the heat load of 0.1000 nW, is compared with the operation of HP-2 (with adiabatic mid section) for the same heat flux input, which corresponds to the heat load of 0.0250 nW for HP-2. Variations of thermal resistances with the filling ratio are given in Fig. 6 (dashed line) and its inset for the operations of HP-2 and HP-1, respectively. In the absence of nanoscale effects, continuum theory would yield a similar thermal performance for both heat pipes in accordance with Eqn. (2.8). However, HP-2 does not work effectively at the same heat flux as shown in Fig. 6. We also halved the heat input of HP-2 to observe its response to the reduction of heat load, and HP-2 operates effectively under the reduced heat load (solid line in Fig. 6). These results demonstrate that size reduction severely reduces the thermal performance of HP-2. In order to determine the reason of performance loss due to scale reduction, time-averaged 13 (nm)࢞(nm)ࢠρρρρ(kg.m-3)(b)(c)(a)MMM-M/ N-NNN0.00.51.01.52.0-1.0-0.50.00.51.0Nano-Grooved Heat Pipes Akkus et al. density distribution within HP-2 is investigated. Variation of the liquid/vapor interface profile along the groove axis is demonstrated by the density distribution on the central y-z plane (Fig. 7a). Unlike HP-1, where height of the liquid phase decreases gradually towards the evaporator, liquid height is constant between the evaporator and condenser in HP-2. Moreover, density distribution of the two phases between groove walls (Fig. 7b) is almost same along the mid region, i.e. the region between evaporator and condenser sections. Furthermore, the interface profile between the liquid and vapor phases is exactly same at any x-z plane lying within the mid region as shown in Fig. 7c, where the strong liquid-solid interaction severely affects the liquid film profile. The free surface between liquid and vapor is not able to form meniscus shaped interfaces with different curvatures along the groove axis. Therefore, capillary pumping mechanism between the evaporator and condenser vanishes, and molecular diffusion resulting from the different densities of the liquid at the evaporator and condenser sections provide the liquid transport [31]. However, molecular diffusion is unable to maintain the thermal performance of the heat pipe in absence of capillary pumping assistance. 5 Conclusions Utilizing molecular dynamics, we constructed a computational setup for the assessment of thermal performance of a nano-grooved Platinum heat pipe filled with Argon as the working fluid. The main conclusions of the current study can be summarized as follows: • Similar to their macro-scale counterparts, nano-grooved heat pipes exhibit an optimum thermal performance at a certain filling ratio. • When nano-grooved heat pipes are thermally overloaded, heat is mainly transferred by axial conduction, which makes them ineffective for thermal management. • As long as the effective operation of the nano-grooved heat pipe is realized, the optimum filling ratio is the same for different heat inputs. • When the size of nano-groove is 3.920 nm× 3.136 nm, both capillary pumping and molec- ular diffusion exist to transport the condensate from condenser to evaporator. • Scaling down the system (a nano-groove size of 1.960 nm × 1.568 nm) leads to thermal performance loss resulting from the vanishing of capillary pumping due to the strong liquid/solid interaction forces that dominate the free surface. This prevents the formation of meniscus shaped interface under the effect of cohesion forces. As the final remark, simulations of the current study demonstrate that a nano-grooved heat pipe (e.g. HP-1 with adiabatic mid section) can operate under tremendous heat flux values, 14 Nano-Grooved Heat Pipes Akkus et al. q(cid:48)(cid:48) = q/(ew), as high as ∼ 980 W/cm2. However, aspect ratio of the heat pipe grooves was kept restricted during simulations due to the limitation of the computational power. On the other hand, recent fabrication techniques enabled production of nano- and angstrom-scale capillaries and cavities with higher aspect ratios [24, 25, 26], which motivates researchers to elucidate the thermal performance of nanoscale heat pipes with higher aspect ratios. If the length of the heat pipe is increased, viscous losses associated with liquid and vapor flows will rise. This, in turn, will result in decreased heat removal capacity of the heat pipe. Our future research will focus on the investigation of heat removal capacity of the nanoscale systems with simpler geometries but higher aspect ratios. Acknowledgments Y.A. acknowledges the financial support of ASELSAN Inc. under scholarship program for post- graduate studies. Computations were carried out using high performance computing facilities of Center for Scientific Computation at Southern Methodist University. Author contributions Y.A. and C.T.N. performed molecular dynamics simulations. Y.A. and A.T.C. wrote the manuscript. All authors contributed most of the ideas and discussed the results. A.B. re- viewed and edited the manuscript. Competing interests The authors declare no competing financial interests. Appendix A. Uncertainty analysis During the study, heat pipe efficiency, thermal resistance, and effectiveness are utilized for the assessment of thermal performance. While efficiency is calculated based on the measured con- duction heat transfer rate ( qcond) through the mid section, thermal resistance and effectiveness require the measurements of temperature at the evaporator and condenser sections. Conduc- tion rate and temperature are sampled at every 1 ns and all the data collected between two measurements is averaged, which yields a certain measurement uncertainty, u, for each time averaged data, (cid:104)..(cid:105). qcond = (cid:104) qcond(cid:105) ± u qcond , 15 (A.1a) Nano-Grooved Heat Pipes T = (cid:104)T(cid:105) ± uT . Akkus et al. (A.1b) Uncertainties associated with conduction rate (u qcond) and temperature (uT ) are estimated by calculating the standard error of measurements, which is evaluated by dividing the standard deviation of measurements to the number of samples. In the calculation of efficiency, uncer- tainty is only associated with u qcond. However, during the calculation of thermal resistance and effectiveness, uncertainties of the temperature difference between the evaporator and condenser should be considered. Uncertainty of the temperature difference (u∆T ) is expressed in terms of the uncertainties of the evaporator (uTev ) and condenser (uTco) temperatures: ∆T = (cid:104)∆T(cid:105) ± u∆T , u∆T =(cid:112)(uTev )2 + (uTco)2 . (A.2a) (A.2b) While the uncertainty of thermal resistance is determined only by u∆T , effectiveness has the uncertainty (uε) resulting from the uncertainties of the temperature differences evaluated at both optimum (u∆T f.f. ) and fully flooded (u∆T opt.) conditions: (cid:118)(cid:117)(cid:117)(cid:116)(cid:32) uε = (cid:104)ε(cid:105) ε = (cid:104)ε(cid:105) ± uε , u∆T f.f. (cid:104)∆T f.f.(cid:105) + (cid:33)2 (cid:32) (cid:33)2 . u∆T opt. (cid:104)∆T opt.(cid:105) (A.3a) (A.3b) References [1] G.E. Moore. Cramming more components onto integrated circuits. Electronics, 38(8):114, 1965. 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1710.10492	1	1710	2017-10-28T16:45:41	Optical evaluation of the wave filtering properties of graded undulated lattices	[ "physics.app-ph" ]	We investigate and experimentally demonstrate the elastic wave filtering properties of graded undulated lattices. Square reticulates composed of curved beams are characterized by graded mechanical properties which result from the spatial modulation of the curvature parameter. Among such properties, the progressive formation of frequency bandgaps leads to strong wave attenuation over a broad frequency range. The experimental investigation of wave transmission, and the detection of full wavefields effectively illustrate this behavior. Transmission measurements are conducted using a scanning Laser vibrometer, while a dedicated digital image correlation procedure is implemented to capture in-plane wave motion at selected frequencies. The presented results illustrate the broadband attenuation characteristics resulting from spatial grading of the lattice curvature, whose in-depth investigation is enabled by the presented experimental procedures.	physics.app-ph	physics	Optical evaluation of the wave filtering properties of graded undulated lattices G. Trainiti1, a) and M. Ruzzene1, 2 1)Georgia Institute of Technology, Daniel Guggenheim School of Aerospace Engineering, Atlanta, 30332, USA 2)Georgia Institute of Technology, George W. Woodruff School of Mechanical Engineering, Atlanta, 30332, USA (Dated: 5 August 2021) We investigate and experimentally demonstrate the elastic wave filtering prop- erties of graded undulated lattices. Square reticulates composed of curved beams are characterized by graded mechanical properties which result from the spatial modulation of the curvature parameter. Among such properties, the progressive formation of frequency bandgaps leads to strong wave at- tenuation over a broad frequency range. The experimental investigation of wave transmission, and the detection of full wavefields effectively illustrate this behavior. Transmission measurements are conducted using a scanning Laser vibrometer, while a dedicated digital image correlation procedure is implemented to capture in-plane wave motion at selected frequencies. The presented results illustrate the broadband attenuation characteristics result- ing from spatial grading of the lattice curvature, whose in-depth investigation is enabled by the presented experimental procedures. Keywords: Graded structural lattices, elastic wave insulation, digital image correlation, optical wavefield measurement I. INTRODUCTION Structural lattices, obtained tessellating 2D and 3D space with slender beam elements, can be regarded as a special class of mechanical metamaterials, whose properties have been copiously investigated in recent years1 -- 3. Demand of lightweight and high strength materi- als, driven by automotive and aerospace industries, has motivated the effort of populating previously forbidden regions of the material properties charts4. In lattice materials stiffness, strength and fracture response have been shown to depend upon geometry and nodal con- nectivity, with behaviors ranging from bending-dominated in foams to stretching-dominated in highly connected cellular solids such as octet-truss lattices4 -- 6. Recent advancements in fabrication capabilities have further spurred on the interested in fully exploiting architected materials' potential, exploring nanometer-scale lattices7 as well as hierarchical geometries8. Structural metamaterials are perhaps even more appealing for their dynamic properties. Frequency-dependent forbidden elastic wave propagation and strongly directional behav- ior have been investigated in several lattice topologies and geometries9 -- 11, with possible applications in noise reduction, vibration control and stress wave mitigation2. Recently, en- hanced functionality in lattices has been explored through nonlinearity to achieve amplitude- dependent response12, tunable directivity with piezoelectric patches and shunted negative capacitance circuits13, and large deformations effects14. Another rather unexplored research direction in structural metamaterials is given by graded configurations, in which the periodic repetition of the same unit cell is replaced by a smooth grading of material properties or geometrical features. In this regard, gradient-index phononic crystals (GRIN PCs) can be designed to provide a refractive index profile able to focus elastic energy, realizing acoustic lenses15, with recent promising extensions to piezoelectric energy harvesting16,17. In struc- tural lattices, grading the curvature of the beam elements has been numerically explored in a)Electronic mail: [email protected]. 2 a) b) c) FIG. 1. Different lattice configurations: straight (a), periodic undulated (b), graded undulated (c). undulated configurations18. Although it was theoretically shown that structural metamate- rials provide a disparate landscape of wave propagation properties, experimental validation is scarcely documented, with most of tests performed to obtain transmissibility measures through a small number of sensors19,20. When full wavefield measurement is required, 3D scanning laser Doppler vibrometry is commonly used to measure the wave velocity field in predefined lattice locations21,22. This approach presents a number of shortcomings, mainly related to the cost of the experimental apparatus and the challenge of focusing three laser beams onto the same measurement location, especially for small lattice beams. We re- cently proposed a different non-contact optical technique to achieve high-spatially resolved wavefield measurements, which is based on optical measurement of the motion through high speed cameras and digital image correlation23. We previously observed that non- periodic, graded configurations display enhanced filtering properties compared to the ones of their periodic counterparts18. In this work, we discuss the experimental investigation of such filtering properties, obtained with and improved version of our optical, digital image correlation-based technique. II. METHODS The design of the graded structure relies on a numerical study of equivalent periodic un- dulated lattices, achieved by analyzing the band gaps locations of infinite periodic structures through a numerical implementation of Bloch's analysis24. For the experimental validation, we first use scanning laser Doppler vibrometry (SLDV) to obtain transmissibility maps. Such maps illustrate the cumulative effect of the increasing undulation along the structure, informing the design of graded structures. Furthermore, a deeper understanding of the wave propagation phenomenon and the role of undulation gradation in filtering elastic waves is achieved with a second approach, based on the measurement of the in-plane wavefield in both lattices with a high speed camera. In this second experiment, we record the motion of the structure and assume that, at each recorded frame, such motion induces a small perturbation in the pixel intensities of the recorder digital images. Then, we correlate the digital images to indirectly infer conclusions on the structure's motion. Fig.1 illustrates the structural lattices considered in this study. Undulated structures are obtained by imposing 3 an initial curvature to the linking elements of a square, periodic straight reticulate. The un- dulation produces a periodic lattice if the imposed curvature varies periodically throughout the structure, while a graded, non-periodic structure is the result of a modulated curvature profile. Among all the possible undulated configurations, we focus our attention on the one inspired by the instability-induced pattern transformation in porous soft materials, due to its interesting wave propagation properties18,25. We start considering an infinite undulated periodic lattice, whose unit cell is represented in Fig. 2. The geometry of the unit cell is defined by a, which is twice the distance between two neighboring lattice interactions, h the thickness of the lattice's beams and c the undulation amplitude. In this work, we assume a = 20.5 mm and we target lattices with slender beams, therefore we consider h = 1 mm. Also, intending to 3D print and test the lattice structures, we consider the lattice's material to be ABSplus-P430 with tensile modulus E = 2.2 GPa and density ρ = 1040 kg/m3. We perform a dispersion analysis of the structure by implementing a FE-based Bloch analysis24 and modeling the unit cell with Abaqus C3D6 6-node linear triangular prism elements26. By sweeping the undulation amplitude c from zero (straight lattice) to cmax ≈ 2 mm, we construct the band gap map of in-plane wave propagation in Fig. 2, obtained by identify- ing the width of the main band gap for each value of the considered c. The main band gap appears for c > ccr, with ccr a certain critical value which in general depends on the slenderness of the beam, thus on the ratio h/a. The widest band gap within the considered range of c is obtained approximately for c ≈ 1.6 mm and it is about 5.5 kHz wide. In contrast, due the shape of the band gap region in Fig. 2, band gaps range from 15.7 kHz to 22.7 kHz, thus covering a wider 7 kHz frequency range. Therefore, one can speculate that a non-periodic structure with smooth graded undulation would benefit from the cumulative contributions of the local value of undulation, leading to an augmented elastic wave filtering capability compared to its periodic counterpart. Experimental validation of graded lattices performance is discussed in the second part of the present work, where tests are performed on two different lattices, a straight and a graded one. We fabricate the lattices with a total of NU = 12 unit cells each using a Stratasys Fortus 250mc 3D printer. The value NU is chosen in order to guarantee a smooth linear grading of the undulation in the range c ∈ [0, 2] mm, given the manufacturing constraints in terms of available printing area (254 × 254 mm). During the fabrication process, the lattices were lying flat on the 3D printer building surface, so to minimize induced anisotropy due to uneven material deposition, which would bias the lattice's in-plane dynamics. For the same reason, the highest degree of fill-to-void ratio was imposed. III. RESULTS AND DISCUSSION A. Transmissibility maps We use the experimental apparatus shown in Fig. 3 to measure the effect of the undulation gradation in the wave propagation attenuation. The lattice is hanging from a frame hold by thin cables to approximate a free boundary conditions. The excitation is provided by a piezoelectric disk glued to lattices' edges. The piezoelectric disk generates a broadband signal, then the scanning head of the SLDV measures the transient response of the structure at different locations x along its edge, where x is a reference frame whose origin corresponds to the edge of the graded lattice with zero undulation. Due to the undulated edge's surface, a retroreflective tape is applied to improve the laser's signal quality. The response is recorded in the form of velocity, with sampling rate of 256 kHz for 8 ms at each of 400 equally spaced locations from x = 0 to x = L = 246 mm. We define the transmissibility map T (x, f ), function of the frequency f and the space variable x, as the ratio: T (x, f ) = 20 log10(cid:20) s(x, f ) s(0, f )(cid:21) (1) where s(x, f ) is the Fourier transform of the signal recorded at the location x, and s(0, f ) is the Fourier transform of the reference signal recorded at x = 0. A comparison between 4 ] z H k [ y c n e u q e r F 25 20 15 10 5 0 30 25 ] z H k [ y c n e u q e r F 20 15 10 5 0 0 X M h c Band gap region a 0.5 1 1.5 2 c [mm] FIG. 2. Band gap map of periodic undulated lattices for increasing c with h = 1 mm. The inset on the bottom left shows the unit cell and its dimensions. The inset on the top left shows the band diagram corresponding to c = 1.75 mm and how the band gap (in red) is identified. The dispersion branches within the band gap are associated to out-of-plane modes which are not meaningful in an in-plane study. the transmissibility maps of the straight and graded lattices is shown in Fig 4. The maps show that the graded lattice achieves a dramatic drop of transmissibility (between ∼ 40dB and ∼ 60dB) in the range between 20 kHz and 27.5 kHz at x = L, thus providing a 7.5 kHz wide wave attenuation range. Moreover, such drop in transmissibility is particularly visible at 20 kHz for x > 150 mm, frequency at which the graded lattice is most effective in filtering elastic waves. In comparing the experimental and theoretical results, we remark that analysis of the band gap map predicts wave attenuation in a 7 kHz wide range of frequencies, which is in excellent agreement with experimental validation. On the other hand, such range is shifted upwards in frequency, which might be explained partly by the uncertainty in material properties of the 3D printed material, especially the effective elastic modulus. B. DIC-based wavefield measurement Based on the information given by the transmissibility map for the graded lattice, we design a second experiment to measure the in-plane wavefield. We target the response of the system at 20 kHz, frequency at which the drop of transmissibility is the largest. The experimental setup, shown in Fig. 5, employs a single high-speed camera (Photron Fastcam SA1.1) to record the motion of the structure. Adequate light is provided by two high intensity lights (Lowel Pro-light). Elastic waves are excited by actuating an ultrasonic piezo-transducer (APC 90-4060) tuned to resonate at f = 20 kHz. A 2.5 kg preload is applied to the structure to improve its coupling with the actuator. For each measurement, a manual switch triggers the recording, then the high-speed camera sends a signal to a data acquisition unit (DAQ, NI USB-6356). Upon receiving the signal from the high-speed 5 FIG. 3. Experimental setup for the measurement of transmissibility maps T (x, f ). a) b) c) ] z H k [ y c n e u q e r F 30 28 26 24 22 20 18 16 14 12 10 -80 -60 -40 -20 0 20 Transmissibility [dB] FIG. 4. Transmissibility maps T (x, f ) for the straight (a) and graded (b) lattices. The graded configuration guarantees a wide transmissibility drop from 20 to 27.5 kHz. The difference in transmissibility between the straight (solid red line) and graded (dotted blue line) lattices is shown in detail in (c) for x = 23.5 mm. FIG. 5. Experimental setup for in-plane wavefield optical measurement with high-speed camera. 6 camera, the DAQ generates the excitation signal, which is then sent to the amplifier and finally to the actuator. Concurrently, the DAQ records the voltage output from a laser Doppler vibrometer (LDV, Polytec PDV 100), which monitors the structure's response at one point on the lattice's side. In choosing the size of the measurement area, we have to consider the high-speed camera's limitations in reading and storing the information while recording. Higher sampling rates force us to reduce the frame size, thus the number of the recorded pixels within the same image, while choosing larger frame sizes implies reducing the frame rate. This inverse relationship between frame rate and frame size would prevent us from measuring large enough wavefields with a sufficient temporal resolution. Nevertheless, such limitations are overcome by effectively increasing both spatial and temporal sampling, as discussed in our previous works23,27. The measurement domain is divided into 23 tiles, each corresponding to an array of 2 × 14 lattice intersections. For each tile, the experiment is performed separately, then the data is stitched together to retrieve the full wavefield. We choose to track 20 evenly spaced points between each intersection, which sums up to roughly 8600 measurement points for the total considered measurement area. The experiments are performed at sampling rate fs = 75 kHz. An effective sampling rate fs,ef f = 2fs = 150 kHz is realized by properly interleaving two different sets of measurements, which differ by a certain delay td = 1/(2fs) between the beginning of the camera measurement and onset of the excitation. The delay time td is imposed by conveniently programming the DAQ. For each set of measurement, we consider 5 averages which help improving the signal-to- noise ratio by reducing the uncorrelated noise. We target the behavior of the system to a narrowband excitation, thus we excite the system with a 11−cycle tone-burst at 20 kHz. In order to obtain a sufficiently large excitation signal, the ultrasonic piezo transducer is coupled to a resonator to amplify its response. The piezo-resonator assembly is tuned to have its first resonant frequency at 20 kHz by properly selecting the resonator's length and conveniently preloading the assembly. The raw data, in the form of pixel intensity variations over the different frames, is collected and pre-processed by correlating the frame set, averaging and interleaving the two measurement sets23. The pre-processed data is then post-processed by filtering the data in the frequency domain around the excitation frequency to improve the signal-to-noise ratio. Owing to the highly discontinuous nature of lattice structure, the results visualization is considerably improved by interpolating the data onto a rectangular 121 × 461 grid of points, as shown in Fig. 6(a). Finally, a moving average filter is applied to the interpolated data to produce the plots shown in Fig. 6(b), which shows the wavefields in both straight and graded configurations, together with the original measurement points at different time instants. We can successfully track the wavefront from the excitation location to the opposite side of the structure. We also remark on the strong directional nature of the wavefront, as expected for straight lattices. The wavefield of the graded lattice, on the other hand, starts differing quite remarkably from the one in the straight lattice already few intersections away from the excitation location, as the effect of the undulation gets strong enough. This effect becomes remarkable halfway through the lattice, preventing the energy carried by the elastic waves from propagating any further, effectively confining it to the first half of the structure. IV. CONCLUSION In conclusion, we experimentally validated the in-plane filtering properties of undulated lattices, showing that single-phase structural metamaterials can be conveniently designed in graded configurations by slowly varying the curvature of the lattice elements along one direction. We showed that the design of the graded lattice is informed by the dispersion analysis of infinite periodic undulated lattice, thorough inspection of the band gap map representing the relation between the band gap width and the beam element's curvature. Then, we compute transmissibility maps by measuring the velocity field at one edge of a graded and an equivalent straight lattice with an SLDV system, identifying a frequency range with transmission attenuation in the graded configuration. Finally, we employ a high speed camera and digital image correlation to measure the full wavefield for a narrowband 7 a) Measurement Grid Interpolation Grid b) FIG. 6. Measurement grid and interpolation grid (a). Interpolated wavefield in the straight and graded lattices show how waves are filtered by the increasing local curvature (b). Black lines represent the measurement locations. Elastic waves are attenuated by the undulation gradation. excitation with frequency spectrum falling within the large attenuation frequency range in both lattices, tracking how in-plane elastic waves are attenuated in the graded one only due to the gradual change in geometry. Future research directions include extending the full wavefield measurement herein discussed for the study of the directional properties of graded lattices, with applications in superior energy guiding, energy focusing and energy harvesting. 8 ACKNOWLEDGMENTS The work is supported by the National Science Foundation - CMMI/ENG Division, through grant 1719728. 1L. Brillouin, Wave propagation in periodic structures: electric filters and crystal lattices, Dover books and science (Dover Publications, 1953). 2M. I. Hussein, M. J. Leamy, and M. Ruzzene, "Dynamics of phononic materials and structures: Historical origins, recent progress, and future outlook," Appl. Mech. Rev. 66, 040802 (2014). 3J. Christensen, M. 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1906.10251	1	1906	2019-06-24T22:12:48	Artificial Neural Network with Physical Dynamic Metasurface Layer for Optimal Sensing	[ "physics.app-ph", "cond-mat.dis-nn", "physics.comp-ph", "physics.optics" ]	We address the fundamental question of how to optimally probe a scene with electromagnetic (EM) radiation to yield a maximum amount of information relevant to a particular task. Machine learning (ML) techniques have emerged as powerful tools to extract task-relevant information from a wide variety of EM measurements, ranging from optics to the microwave domain. However, given the ability to actively illuminate a particular scene with a programmable EM wavefront, it is often not clear what wavefronts optimally encode information for the task at hand (e.g., object detection, classification). Here, we show that by integrating a physical model of scene illumination and detection into a ML pipeline, we can jointly learn optimal sampling and measurement processing strategies for a given task. We consider in simulation the example of classifying objects using microwave radiation produced by dynamic metasurfaces. By integrating an analytical forward model describing the metamaterial elements as coupled dipoles into the ML pipeline, we jointly train analog model weights with digital neural network weights. The learned non-intuitive illumination settings yield a higher classification accuracy using fewer measurements. On the practical level, these results are highly relevant to emerging context-aware systems such as autonomous vehicles, touchless human-interactive devices or within smart health care, where strict time constraints place severe limits on measurement strategies. On the conceptual level, our work serves as a bridge between wavefront shaping and tunable metasurface design on the physical layer and ML techniques on the processing layer.	physics.app-ph	physics	Artificial Neural Network with Physical Dynamic Metasurface Layer for Optimal Sensing Philipp del Hougne,1, ∗ Mohammadreza F. Imani,2 Aaron V. Diebold,2 Roarke Horstmeyer,3 and David R. Smith2 1Institut de Physique de Nice, CNRS UMR 7010, Universit´e Cote d'Azur, Nice, France 2Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina, USA 3Biomedical Engineering Department, Duke University, Durham, North Carolina, USA (Dated: June 26, 2019) We address the fundamental question of how to optimally probe a scene with electromagnetic (EM) radiation to yield a maximum amount of information relevant to a particular task. Machine learning (ML) techniques have emerged as powerful tools to extract task-relevant information from a wide variety of EM measurements, ranging from optics to the microwave domain. However, given the ability to actively illuminate a particular scene with a programmable EM wavefront, it is often not clear what wavefronts optimally encode information for the task at hand (e.g., object detection, classification). Here, we show that by integrating a physical model of scene illumination and detection into a ML pipeline, we can jointly learn optimal sampling and measurement processing strategies for a given task. We consider in simulation the example of classifying objects using microwave radiation produced by dynamic metasurfaces. By integrating an analytical forward model describing the metamaterial elements as coupled dipoles into the ML pipeline, we jointly train analog model weights with digital neural network weights. The learned non-intuitive illumination settings yield a higher classification accuracy using fewer measurements. On the practical level, these results are highly relevant to emerging context-aware systems such as autonomous vehicles, touchless human-interactive devices or within smart health care, where strict time constraints place severe limits on measurement strategies. On the conceptual level, our work serves as a bridge between wavefront shaping and tunable metasurface design on the physical layer and ML techniques on the processing layer. I. INTRODUCTION Wave-based sensing is of fundamental importance in countless applications, ranging from medical imaging to non-destructive testing [1]. Currently, it is emerging as key enabling technology for futuristic "context-aware" concepts like autonomous vehicles [2, 3], ambient-assisted living facilities [4, 5] and touchless human-computer in- teraction (HCI) devices [6, 7]. In these context-aware settings, an important goal is often to achieve the high- est possible accuracy for a given task, such as recogniz- ing a hand gesture, with as few measurements as possi- ble. Minimizing the number of measurements can help improve a wide number of metrics - for example, speed, power consumption, and device complexity. It is also cru- cial in a variety of specific contexts - for instance, to limit radiation exposure (e.g., x-ray imaging [8]), to adhere to strict timing constraints caused by radiation coherence or unknown movements in a biological context [9 -- 11], or to make real-time decisions in automotive security [3, 12]. In all of the above applications, "active" illumination is sent out from the device to interact with the scene of interest before the reflected waves are captured by the sensor. The resulting measurements are then pro- cessed to achieve a particular goal. Usually, acquisition and processing are treated and optimized separately. For instance, the spatial resolution of a LIDAR system on ∗ [email protected] an autonomous vehicle is often optimized to be as high as possible, while its resulting measurements are subse- quently processed to detect pedestrians with as high an accuracy as possible. Recently, machine learning (ML) techniques have dramatically improved the accuracy of measurements post-processing for complex tasks (like ob- ject recognition) without requiring explicit analytical in- structions [13 -- 18]. However, to date, the physical acquisition layers of context-aware systems have yet to reap the benefits of new ML techniques. At the same time, by separately op- timizing acquisition hardware and post-processing soft- ware, most sensing setups are not tailored to their specific sensing task. Instead, as with the LIDAR example noted above, hardware is typically optimized to obtain a high- fidelity visual image for human consumption, thereby of- ten ignoring available knowledge that could help to high- light information that is critical for ML-based analysis. Here, we address both of the above shortcomings with a new "learned sensing" paradigm for context-aware sys- tems that allows for joint optimization of acquisition hardware and post-processing software. The result is a device that acquires non-imaging data that is optimized for a particular ML task. We consider the challenge of identifying settings of a reconfigurable metamaterial- based device emitting microwave patterns that can en- code as much relevant information about a scene for subsequent ML-based classification with as few measure- ments as possible. However, as we will detail, this frame- work is general, flexible, and can impact a number of 9 1 0 2 n u J 4 2 ] h p - p p a . s c i s y h p [ 1 v 1 5 2 0 1 . 6 0 9 1 : v i X r a future measurement scenarios. II. ILLUMINATION STRATEGIES IN WAVE-BASED SENSING A number of prior works have attempted to optimize active illumination in the microwave, terahertz, and opti- cal regimes to improve the performance of certain sensing tasks. The simplest approach in terms of the transceiver hardware is often to use random illumination, for in- stance, by leveraging the natural mode diversity available in wave-chaotic or multiply-scattering systems [19 -- 22]. Random illuminations have a finite overlap that reduces the amount of information that can be extracted per ad- ditional measurement. A truly orthogonal illumination basis, such as the Hadamard basis [23 -- 26], has also been frequently used to overcome this (minor) issue, often at the cost of more complicated hardware. These forms of "generic" illumination often fail to ef- ficiently highlight salient features for task-specific sens- ing, which is desirable to reduce the number of required measurements. In other words, they do not discriminate between relevant and irrelevant information for the task at hand. Task-specific optimal illumination can be chal- lenging to determine, due to hardware constraints (e.g., few-bit wavefront modulation), possible coupling effects between different transceivers, and in particular a lack of insight into the inner workings of the ML network (i.e., the artificial neural network, ANN) used to process the acquired data for each task. So far, most attempts at task-specific tailored illuminations seek to synthesize il- lumination wavefronts matching the expected principal components of a scene [27 -- 30]. To outperform generic il- lumination, such an approach requires a sufficiently large aperture with a sufficient amount of tunable elements to synthesize wavefronts in reasonable agreement with the expected principal components. Moreover, a sufficient number of measurements has to be taken to cover the most important principal scene components. Approaches based on a principal component analysis (PCA) of the scene can thus be interpreted as a step towards optimal wave-based sensing (see Fig. S3 in the Supplemental Material); they work well under favorable conditions (large aperture, many tunable elements, un- restricted number of measurements). However, the fun- damental challenge of extracting as much task-relevant information as possible using a general wave-based sen- sor thus remains open. Besides its fundamental interest, the question is also of high relevance to many practical applications: for instance, in automotive RADAR and LIDAR, the aperture size, the number of tunable illu- mination elements, and the measurement sampling rate over space and time are all highly restricted. In these constrained scenarios, we hypothesize that wave-based sensing can benefit from joint optimization of data ac- quisition and processing. Inspired by recent works in the optical domain [12, 32], 2 this work interprets data acquisition as a trainable physi- cal layer that we integrate directly into an ANN pipeline. By training the ANN with a standard supervised learn- ing procedure, we can simultaneously determine opti- mal illumination settings to encode relevant scene in- formation, along with a matched post-processing algo- rithm to extract this information from each measurement -- automatically taking into account any constraints on transceiver tuning, coupling and the number of allowed measurements. As noted above, we apply our concept to classification tasks with microwave sensors. These tasks are a crucial stepping stone towards numerous context-aware systems e.g. in smart homes, for hand gesture recognition with HCI devices, for concealed-threat identification in secu- rity screening, and in autonomous vehicles [2 -- 7]. Mi- crowave frequencies can operate through optically opaque materials such as clothing, are not impacted by external visible lighting and scene color, minimally infringe upon privacy (unlike visual cameras) and may eventually help sense through fog, smoke and "around-the-corner" [7]. We focus on optimally configuring dynamic metasur- face hardware, a promising alternative to more tradi- tional antenna arrays for beam-forming and wavefront shaping [23]. Dynamic metasurfaces are electrically large structures patterned with metamaterial elements that couple the modes of an attached waveguide or cavity to the far field [24, 25]. Reconfigurability is achieved by indi- vidually shifting each metamaterial element's resonance frequency, for instance, with a PIN diode [5]. Compared to a traditional antenna array that uses amplifiers and phase shifters, the inherent analog multiplexing makes dynamic metasurface hardware much simpler, less costly and easier to integrate in many applications. To demonstrate our proposed Learned Integrated Sens- ing Pipeline (LISP), we jointly optimize the illumina- tion and detection properties of dynamic metasurface transceivers, along with a simple neural network classi- fier, for the task of scene classification. In this work, we consider the dummy task of classifying "handwritten" metallic digits in simulation. Replacing this dummy task with a more realistic scenario, such as concealed-threat detection, hand-gesture recognition or fall detection, is conceptually straight-forward. To construct the LISP, we first formulate an analytical forward model which is possible due to the intrinsic sub-wavelength nature of the metamaterial elements. Second, we allow certain key pa- rameters within the "physical" forward model to act as unknown weights (here the reconfigurable resonance fre- quency of each metamaterial element), that we aim to optimize over. Third, we then merge this weighted phys- ical model into an ANN classifier, and use supervised learning to jointly train the unknown weights in both to maximize the system's classification accuracy. Despite coupling between metamaterial elements and a binary tuning constraint, which would otherwise be challenging to account for in a standard inverse model, our ANN im- plicitly accounts for this during training and identifies si- multaneously optimal illumination settings and process- ing structures to extract as much task-relevant informa- tion as possible. We are also easily able to use this model to compare the performance of our scheme with the afor- mentioned benchmarks of orthogonal and PCA-based il- lumination. Interestingly, our LISP can also be interpreted in light of recent efforts to meet the exploding computational demands of ANNs with wave-based analog computing, which seeks to perform desired operations with waves as they interact with carefully tailored systems [36 -- 43]. Our wave-based sensing scheme is essentially a hybrid analog- digital ANN in which the interaction of learned optimal wavefronts with the scene acts as a first processing layer. As we will show, data acquisition fulfills two processing tasks in our pipeline, being (i) trainable and (ii) highly compressive. III. OPERATION PRINCIPLE This section is outlined as follows: first, we introduce the hardware of our reconfigurable metasurface aper- tures. Second, we establish an analytical forward model of our sensor's physical layer built upon a compact de- scription of the metamaterial elements as dipoles. It consists of three steps: (i) extracting each metamaterial element's dipole moment while taking tuning state and inter-element coupling into account; (ii) propagating the radiated field to the scene; (iii) evaluating the scattered field. Third, we outline the sensing protocol. Finally, fourth, we integrate analog (physical) and digital (pro- cessing) layers into a unique ANN pipeline and discuss how it can be trained and account for binary reconfig- urability constraints. Note that this section seeks to give a clear and thor- ough overview of the physical layer and its integration into the ANN pipeline by only providing key equations; details, derivations and equations defining all variables are included in Section A of the Supplemental Material for completeness, following Refs. [1, 2]. A. Dynamic Metasurface Aperture The reconfigurable metasurface that we consider for the generation of shaped wavefronts is depicted in Fig. 1(a). It consists of a planar metallic waveguide that is excited by a line source (a coaxial connector in a practical implementation). N metamaterial elements are patterned into one of the waveguide surfaces to couple the energy to free space. An example of a metamaterial element that could be used is the tunable complimen- tary electric-LC (cELC) element [5] shown in the inset of Fig. 1(a). A possible tuning mechanism to individually configure each metamaterial element's radiation proper- ties involves diodes. Then, the cELC element is resonant or not (equivalently, radiating or not radiating) at the 3 FIG. 1. Schematic overview of operation principle. (a) Dy- namic metasurface. N = 64 tunable metamaterial ele- ments are patterned into the upper surface of a planar waveg- uide. The inset shows the geometry of an example cELC metamaterial element that could be used in combination with PIN diodes (location and orientation indicated in yellow) to reconfigure the element. The waveguide is excited by the in- dicated line source. (b) Sensing setup. The scene consists of a metallic digit in free space that is illuminated by a TX metasurface and the reflected waves are captured by a second RX metasurface. (c) Sensing protocol. The scene is illu- minated with M distinct TX-RX metasurface configurations, yielding a 1 × M complex-valued measurement vector that is processed by an artificial neural network consisting of fully connected layers. The output is a classification of the scene. working frequency of f0 = 10 GHz depending on the bias voltage of two PIN diodes connected across its capacitive gaps. The N metamaterial elements are randomly dis- tributed within a chosen aperture size (30 cm × 30 cm) but a minimum distance between elements of one free- space wavelength is imposed [6]. Similar dynamic metasurfaces have previously been used to generate random scene illuminations for com- putational imaging [24, 25]. Here, we will take full ad- vantage of the ability to individually control each radi- ating element to purposefully shape the scene illumina- tions. The individual addressablility of each metama- terial element distinguishes these dynamic metasurfaces from other designs in the literature that simultaneously reconfigure all elements to redirect a beam [47 -- 49]. Our LISP could of course also be implemented with other wavefront shaping setups such as arrays of reconfigurable antennas [23], reflect-arrays illuminated by a separate feed (e.g. a horn antenna) [50 -- 52] or leaky-wave antennas with individually controllable radiating elements [53, 54]. Indeed, if our concept was transposed to the acoustic or optical regime, one would probably use an array of acous- tic transceivers or a spatial light modulator, respectively. In the microwave domain, however, antenna arrays are costly and the use of reflect-arrays yields bulky setups. In contrast, dynamic metasurface hardware as the one in Fig. 1(a) benefits from its inherent analog multiplex- ing and is moreover compact, planar and can be fabri- cated using standard PCB processes. Note that although we focus for concreteness on an implementation that we consider advantageous, our ideas are not limited to this specific hardware. B. Compact Analytical Forward Model The formulation of a compact analytical forward model is enabled by the intrinsic sub-wavelength nature of the radiating metamaterial elements which enables a conve- nient description in terms of (coupled) dipole moments [55 -- 58]. Ultimately, we will directly link a given meta- surface configuration (specifying which elements are ra- diating) to the radiated field. Note that the possibility to analytically do so is a key advantage of this metasurface hardware over alternative devices with reconfigurable ra- diation pattern such as leaky reconfigurable wave-chaotic three-dimensional cavities [59 -- 61]. For the latter, one could learn forward models based on near-field scans of radiated fields [22, 23]; yet the number of required equiva- lent source dipoles [2] (even with a coarse half-wavelength sampling of the aperture) is much higher than in our case where it is simply N . 1. Dipole Moments Generally speaking, a point-like scatterer's magnetic dipole moment m is related to the incident magnetic field Hloc via the scatterer's polarizability tensor α: m(r) = α Hloc(r), (1) 4 the waveguide structure can be extracted [3]. For the metamaterial element we consider, only the αyy com- ponent is significant. In the following, we use αyy = (1.5 − 3.5i) × 10−7 m3 which is a typical polarizability value for a tunable cELC element [3] [9]. The tuning state of a given metamaterial element can be encoded in its polarizability: if the element is "off", its polariz- ability (at the working frequency) is zero and hence it does not radiate any energy. We thus use tj,iαyy as effec- tive polarizability, where tj,i ∈ {0, 1} is the tuning state of the jth metamaterial element in the ith metasurface configuration. The local magnetic field Hloc that excites the meta- material element is a superposition of the feed wave and the fields scattered off the other metamaterial elements. Hloc in Eq. S1 is thus itself a function of the metama- terial elements' magnetic dipole moments, yielding the following system of coupled equations [1]: y (rj) = (tj,iαyy)−1 my(rj), H loc (2a) (cid:88) j(cid:54)=k H loc y (rj) = H f eed y (rj) + Gyy(rj, rk) my(rk), (2b) y where Eq. 2a is a rearranged version of Eq. S1 and the in- dex i identifies the ith metasurface configuration. Equa- tion 2b expresses the local field at location rj as sum of the feed wave H f eed at rj and the individual contribu- tions from each of the other metamaterial elements at rk (cid:54)= rj via the Green's functions Gyy(rj, rk). Explicit expressions for H f eed (rj) and Gyy(rj, rk) are provided in the Supplemental Material. To solve Eq. S6 for the mag- netic dipole moments we rewrite it in matrix form and perform a matrix inversion, as shown in Step 1A in the top line of Fig. 2: y y y y Mi = {Ai − G}−1F, where Mi = [my,i(r1), my,i(r2), . . . , my,i(rN)], Ai = diag(cid:0)(cid:2)t1,iαyy)−1, (t2,iαyy)−1, . . . , (tN,iαyy)−1(cid:3)(cid:1) and F = (cid:2)H f eed (rN)(cid:3). The off-diagonal (r2), . . . , H f eed (r1), H f eed (3) entry (j, k) of G is Gyy(rj, rk), and the diagonal of G is zero since the self-interaction terms are incorporated into the effective polarizabilities in Ai [66]. Due to the metamaterial element interactions via the Gyy(rj, rk) term, the mapping from tuning state to dipole moments is not linear. This is visualised with an ex- ample in Fig. S1. Thus, ultimately the mapping from tuning state to radiated field cannot be linear, which is a substantial complication for most beam synthesis ap- proaches; as we will see in Section III D, this does not pose any additional complication in our LISP. where r denotes the scatterer's location. In our case, using surface equivalent principles, an effective polariz- ability tensor of the metamaterial element embedded in Having found a description of the metamaterial ele- ments in terms of dipole moments, we can now go on 2. Propagation to Scene to identify the wavefront impacting the scene for a given metasurface configuration. The sensing setup we con- sider is depicted in Fig. 1(b). A transmit (TX) metasur- face like the one discussed above illuminates the scene. The scene, in our case, consists of a planar metallic digit of size 40 cm×40 cm in free space that is to be recognized at a distance of 1 m. To compute the ith incident TX wavefront (corre- sponding to the ith metasurface configuration) at a lo- cation ζ in the scene, we superimpose the fields radiated by each of the N metamaterial element dipoles [2, 29]: (cid:32) N(cid:88) j=1 −iωµ0 4π ETX i (ζ) = (cid:33) (cid:32)−ik Γj (mi(rj) × ρj) − 1 Γ2 j e−ikΓj (4) where ω = 2πf0, Γj = ζ − rj, ρj is a unit vector paral- lel to ζ − rj and mi(rj) is the magnetic dipole moment of the jth metamaterial element in the ith metasurface configuration. Equation S13 is the second step of our analytical forward model, as shown in Step 1B in Fig. 2. Since the magnetic dipole moments only have a signifi- cant y-component, the radiated electric field's dominant component is along z. 3. Measurement To complete the physical layer description, we need to identify the portion of TX fields that is reflected off the scene and collected by the second receiving (RX) meta- surface, as shown in Fig. 1(b). Since our scene is flat and reflections are primarily specular, the first Born ap- proximation is a suitable description: the field reflected at location ζ in the scene is ETX (ζ) σ(ζ), where σ is the scene reflectivity. The RX metasurface captures specific wave forms depending on its configuration; their shape is essentially defined via a time-reversed version of Eq. S13. The complex-valued signal measured for the ith pair of TX-RX configurations is thus [2] i (cid:90) scene gi ∝ ETX i (ζ) · ERX i (ζ) σ(ζ) dζ. (5) i (ζ) · ERX This is the third and final step of our analytical forward model, shown as Step 1C in Fig. 2. Note that the scene σ(ζ) is ultimately sampled by Ii(ζ) = ETX (ζ); when loosely referring to "scene illumination" in this work, we mean this product of ETX (ζ). [68] In practice, to compute the integral, we discretize the scene at the Rayleigh limit, that is the scene consists of a 28 × 28 grid of points with half-wavelength spac- ing. Each point's reflectivity value σ(ζ) is a gray-scale real value determined by the corresponding handwritten digit's reflectivity map. (ζ) and ERX i i i C. Sensing Protocol 5 (cid:33) , Having outlined the physical layer of our sensing setup, we next consider the sensing protocol. A single measure- ment, depending on various factors such as the sensing task's complexity, the type of scene illumination but also the signal-to-noise ratio, may not carry enough informa- tion to successfully complete the desired sensing task [69]. Hence, in general, we illuminate the scene with M dis- tinct patterns. Each pattern corresponds to a specific pair of TX and RX metasurface configurations. Since our scheme is monochromatic, each measurement yields a single complex value gi. As shown in Fig. 1(c), our 1× M complex-valued mea- surement vector is fed into a processing ANN. The latter consists of two fully connected layers. Real and imagi- nary parts of the measurement vector are stacked and the resultant real-valued vector is the input to the first layer consisting of 256 neurons with ReLu activation. This is followed by a second fully connected layer made up of 10 neurons with SoftMax activation, yielding a nor- malized probability distribution as output. (See Supple- mental Material for details.) The highest value therein corresponds to the classification result (one digit between "0" and "9"). These are the two digital layers shown in Fig. 2. This architecture was chosen without much op- timization and still performs quite well; its performance was observed to not significantly depend on the chosen parameters, such as the number of neurons. D. Hybrid Analog-Digital ANN Pipeline We are now in a position to assemble our pipeline consisting of an analog and two digital layers as out- lined above (Fig. 2). The input, a scene, is injected into the analog layer which contains trainable weights and is moreover highly compressive. The output from the analog layer, the measurement vector, continues to be processed by the digital layers which contain train- able weights as well. The final digital layer's output is the classification of the scene. By jointly training the analog and the digital weights, we identify illumination settings that optimally match the constraints and pro- cessing layer. Importantly, this means that the ANN will find an optimal compromise also in cases where the aper- ture size is small and few tunable elements are available, meaning that PCA modes cannot be synthesized accu- rately, and when the number of measurements is very limited, meaning that not all significant PCA modes can be probed. c p , w(1) and w(2) p,i , b(2) While the digital weights (b(1) c,p in Fig. 2) are real-valued variables drawn from a continu- ous distribution, our metasurface hardware requires the physical weights tj,i to be binary. At first sight, this constraint is incompatible with variable training by back- propagating errors through the ANN which relies on com- puting gradients [11]. An elegant solution consists in 6 FIG. 2. Overview of our Learned Integrated Sensing Pipeline (LISP). The analog (physical) layer corresponds to the sensing setup introduced in Fig. 1(b). A scene is illuminated with a dynamic metasurface, and the reflected waves are captured with a second metasurface. The analytical forward model for the analog layer consists of three steps. First, each metamaterial element's magnetic dipole moment is calculated for a given metasurface configuration. The inset shows an example of calculated dipole moments which are represented as phasors, with the radius of the circle being proportional to their amplitude, and the line segment showing their phase. The circles are centered on the physical location of each metamaterial element. Second, the field radiated by these dipoles to the scene is computed. The inset shows amplitude (left) and phase (right) of a sample field illuminating the scene. Third, the measurement is evaluated. Note that the figure contains the equations for Steps 1A and 1B only for the TX metasurface, for the sake of clarity; the RX equations are analogous. The measurement vector, consisting of complex-valued entries corresponding to different configurations of the TX-RX metasurfaces, is then processed by two fully connected layers consisting of 256 and 10 neurons, respectively. Finally, a classification of the scene is obtained as output. Trainable weights in our hybrid analog-digital ANN pipeline are both in the analog and the digital layers and highlighted in green. During training, these are jointly optimized via error back-propagation. the use of a temperature parameter that supervises the training, gradually driving the physical weights from a continuous to a discrete binary distribution [12]. The de- tailed implementation thereof is outlined in Section B.2 of the Supplemental Material. Note that we ultimately only have to formulate an analytical forward model; the fact that this model contains coupling effects and binary weight constraints does not bring about any further com- plications in our scheme. The weights are trained using 60, 000 sample scenes from the reference MNIST dataset, as detailed in Section B.1 of the Supplemental Material. In order to compare our LISP with the benchmarks of orthogonal and PCA-based illuminations, we solve the corresponding inverse design problems by only taking the analog layer of our pipeline and defining a cost function based on the scene illuminations (rather than the classi- fication accuracy). The procedure is detailed in Section B.3 of the Supplemental Material. IV. RESULTS In this section, we analyze the sensing performance of our LISP and compare it to the three discussed bench- marks based on random, orthogonal and PCA-based il- luminations. We consider dynamic metasurfaces with N = 64 or N = 16 metamaterial elements and analyze whether the obtained optimal illuminations can be re- lated to orthogonality or PCA-based arguments. Finally, we investigate the robustness to fabrication inaccuracies. A. Sensing Performance We begin by considering a single realization with M = 4 measurements and N = 64 metamaterial elements per metasurface. The dipole moments and scene illumina- tions corresponding to the four learned metasurface con- figurations are displayed in Fig. 3(a). The performance metric to evaluate the sensing ability is the average clas- sification accuracy on a set of 10, 000 unseen samples. The confusion matrix in Fig. 3(b) specifically shows how often a given digit is classified by the ANN as one of the ten options. The strong diagonal (corresponding to correctly identified digits) reflects the achieved average accuracy of 92.5%. Note that the diagonal entries are not expected to be equally strong (e.g. the (1, 1) entry is a bit stronger), since the test dataset does not include the exact same number of samples from each class. The off-diagonal entries of the confusion matrix are uniformly weak, so the ANN does not get particularly confused by any two classes. We now study the sensing performance more system- atically for different values of M and N . Since the ANN weights are initialized randomly before training, we con- duct 40 realizations for each considered parameter com- bination. Averaging over realizations allows us to focus on the role of M and N without being sensitive to a given realization. Moreover, we can see the extent to which different realizations converge to similar results. In Fig. 4(a) we contrast the sensing performance that we achieve by integrating a dynamic metasurface (con- sisting of 64 or 16 metamaterial elements) as physical layer into the ANN pipeline with the attainable perfor- mance if acquisition and processing are treated separately in schemes employing random, orthogonal or PCA-based scene illuminations. Random illuminations yield the worst performance out of the four considered paradigms. Orthogonal illumi- nations yield a marginal improvement over random il- luminations as the number of measurements M gets larger, since the non-overlapping illuminations can ex- tract marginally more information about the scene. Yet the information that random and orthogonal illumina- tions encode in the measurements is not necessarily task- relevant. The PCA-based approach presents a notice- able performance improvement over generic illuminations but remains well below the attainable performance with learned optimal illumination settings obtained by inte- grating the analog layer into the ANN. Our LISP clearly outperforms the other three benchmarks. The PCA- based approach is quite sensitive to the number of tun- able elements in the dynamic metasurface (keeping the same aperture size), since beam synthesis works better 7 with more degrees of freedom. In contrast, using only 16 instead of 64 metamaterial elements yields almost iden- tical sensing performance if the dynamic metasurface is integrated into the ANN pipeline. This suggests that us- ing very few elements, and thus a very light hardware layer, our LISP can successfully perform sensing tasks. For M ≤ 5, our scheme yields gains in accuracy of the order of 10% which is a substantial improvement in the context of classification tasks [71]; for instance, automo- tive security, where the number of scene illuminations is very limited, would be enhanced significantly if the recog- nition of, say, a pedestrian on the road could be improved by 10%. The performance using our learned illumination settings saturates around M = 5 at 95%, meaning that we manage to extract all task-relevant information from a 28× 28 scene with only 5 measurements. The compres- sion is enabled by the sparsity of task-relevant features in the scene. Yet our scene is not sparse in the canonical basis: our region of interest corresponds to the size of the metallic digits. Unlike traditional computational imag- ing schemes, the compression here comes from the dis- crimination between relevant and irrelevant information in a dense scene. Our LISP thus achieves a significant dimensionality reduction by optimally multiplexing task- relevant information from different parts of the scene in the analog layer. The dimensionality reduction brings about a double advantage with respect to timing con- straints: taking fewer measurements takes less time, and moreover less data has to be processed by the digital lay- ers. In our (not heavily optimized) ANN architecture, the computational burden of the first digital ANN layer is directly proportional to the number of measurements M . We thus believe that our scheme is very attractive in particular when real-time decisions based on wave-based sensing are necessary, notably in automotive security and touchless human-computer interaction. Moreover, a re- duced processing burden can potentially avoid the need to outsource computations from the sensor edge to cloud servers via wireless links, mitigating associated latency and security issues [72]. A natural question that arises (albeit irrelevant for practical applications) is whether the other benchmark illumination schemes (random, orthogonal, PCA-based) will eventually, using more measurements, be able to per- form as well as our LISP. For the N = 16 case, we thus evaluated the average classification accuracy also for M = N and M = 2N . Only the LISP curve had saturated; the other benchmarks accurracies were still slightly improving between M = N and M = 2N and were still somewhat below the LISP performance. Since the "scene illumination" Ii(ζ) = ETX (ζ) de- pends on the configuration of two metasurfaces with N tunable elements each, we expect that all schemes per- form equally well only once M ≥ N 2. (ζ) · ERX i i A striking difference in the performance fluctuations, evidenced by the error bars in Fig. 4(a), is also visible. While the performance of our LISP does not present any appreciable fluctuations for M ≥ 4, all other benchmark 8 FIG. 3. Analysis of LISP illumination patterns for a single realization with M = 4. (a) For each of the four masks, the corresponding TX and RX dipole moments, and the magnitude and phase of the corresponding scene illuminations ET X z,i ERX z,i , i ∈ {1, 2, 3, 4}, are shown. The dipole moment representations are as in the inset of Fig. 2. The magnitude maps are normalized individually, the phase maps have a colorscale from −π to π. (b) Confusion matrix evaluated on an unseen test dataset of 10, 000 samples. This realization achieved 92.5% classification accuracy. (c) Mutual overlap of the four scene illuminations. The average over the off-diagonal entries of the overlap matrix is 0.45. (d) Overlap of the four scene illuminations with the first 25 PCA modes. Note that the colorscale's maximum is 0.34 here (i.e. well below unity). The inset shows magnitude and phase of the first five PCA modes. FIG. 4. (a) Comparison of the sensing performance with the LISP illumination settings with three benchmarks: random, orthogonal and PCA-based scene illuminations. (b) Analysis of the mutual overlap between distinct scene illumination. (c) Analysis of the maximum overlap of the scene illuminations with a PCA mode. All data points are averaged over 40 realizations. Errorbars indicate the standard deviation. illumination schemes continue to fluctuate by several per- cent of classification accuracy. Our scheme's performance is thus reliable whereas any of the other benchmarks in any given realization may (taking the worst-case sce- nario) yield a classification accuracy several percent be- low its average performance. Performance reliability of a sensor is important for deployment in real-life decision making processes. B. Analysis of learned scene illuminations that suggests The inferior performance of orthogonal and PCA- based illuminations the task-specific learned LISP illuminations do not trivially correspond neither to a set of optimally diverse illuminations nor to the principal components of the scene. To substantiate this observation, we go on to analyze the scene illumina- tions in more detail. First, within a given series of M illuminations, we compute the mutual overlap between different illuminations. In the following, we define the overlap O of two scene illuminations A(ζ) and B(ζ) as (cid:12)(cid:12)(cid:12)(cid:12)(cid:12)(cid:12) O(A, B) = (cid:82) (cid:113)(cid:82) scene A†B dζ scene A†A dζ (cid:82) scene B†B dζ (6) (cid:12)(cid:12)(cid:12)(cid:12)(cid:12)(cid:12) , where † denotes the conjugate transpose operation. An example overlap matrix for M = 4 is shown in Fig. 3(c). We define the illumination pattern overlap as the mean of the off-diagonal elements (the diagonal entries are unity by definition). In Fig. 4(b) we present the average illumination pat- tern overlap for all four considered paradigms. For the case of orthogonal illuminations, the overlap is very close to zero, indicating that our inverse metasurface config- uration design worked well. The inverse design works considerably better with N = 64 as opposed to N = 16, and of course the more illuminations we want to be mu- tually orthogonal the harder the task becomes. While radiating orthogonal wavefronts with the dynamic meta- surface is not the best choice for sensing, it may well find applications in wireless communication [73]. For the case of random illuminations, the mutual overlap is constant at 28.5% and independent of N . This is indeed the aver- age overlap of two random complex vectors of length 10, 10 corresponding roughly to the number of independent speckle grains in the scene -- see Fig. 3(a). The mutual overlap of PCA-based illuminations, ex- cept for very low M , saturates around 21.5% and 24.5% for N = 64 and N = 16, respectively, and is hence lower than that of random illuminations. In principle, if beam synthesis worked perfectly, the PCA-based pat- terns should not overlap at all since PCA modes are or- thogonal by definition. The more degrees of freedom N we have, the better the beam synthesis works, and con- sequently the lower the mutual overlap of PCA-modes 9 is. For the LISP scene illuminations, the average mutual overlap is comparable to that of random scene illumina- tions. We hence conclude that the diversity of the scene illuminations is not a key factor for the extraction of task- relevant information. Next, we investigate to what extent the scene illumina- tions overlap with PCA modes. An example of the over- lap with the first 25 PCA modes is provided in Fig. 3(d). In Fig. 4(c), we present the average of the maximum overlap that a given illumination pattern has with any of the PCA modes. For random and orthogonal illumi- nations, irrespective of N and M , this overlap is around 20% and thus insignificant, as expected. For PCA-based illuminations we have performed beam synthesis to pre- cisely maximize this overlap. We achieve (65.0 ± 1.9)% with N = 64 and (44.1 ± 1.4)% with N = 16. The abil- ity to synthesize the PCA modes is thus very dependent on the number of metamaterial elements, and these re- sults demonstrate that the PCA-based approach is suit- able only for scenarios where N is large. This observa- tion is a further argument for the attractiveness of our approach in applications with very limited aperture size and tunability like automotive RADAR. In fact, since the PCA-based approach also requires an analytical forward model, one may as well choose the superior performance of our LISP proposal in any scenario where the PCA- based approach could be employed. Moreover, training with our approach is faster since all weights are optimized simultaneously, as opposed to first solving M inverse de- sign problems and then training the digital weights. The overlap of the LISP illuminations with PCA modes is around 30% and thus notably larger than for random or orthogonal illuminations but also notably lower than what can be achieved if one seeks PCA modes. Interest- ingly, the maximum overlap with a PCA mode is lower for M = 1 and M = 2. We conclude that the opti- mal illumination patterns identified by our ANN cannot simply be explained as corresponding to PCA modes, or to be a good approximation thereof. Notably for small M this is not the case. During training, the ANN finds an optimal compromise taking the inner workings of the nonlinear digital layers as well as the physical layer con- straints into account. The joint optimization of analog and digital layers provides substantially better perfor- mance than considering them separately and trying to anticipate useful illumination patterns. We observe no significant difference in the performance across different metasurface realizations (i.e. different random locations of the metamaterial elements). The LISP scene illuminations overlap around 65% across dif- ferent realizations with the same metasurface, indicating that the optimization space contains numerous almost equivalent local minima. Remarkably, we never seem to get stuck in inferior local minima. C. Robustness Finally, we investigate how robust the sensing perfor- mance is outside the nominal conditions, i.e. over a given set of parameter variations. Here, we consider variations of the metamaterial elements' polarizability; due to fab- rication tolerances of electronic components such as the PIN diodes the experimental polarizability is expected to differ across metamaterial elements by a few percent from the value extracted via full-wave simulation based on the element's design [3]. With M = 5 and N = 64, we first train our LISP as before. Then, for each metamaterial element, we replace the true polarizability value αyy by a different α(cid:48) yy = αyy (1 + ), where is white noise; real and imaginary parts of are identically distributed with zero mean and standard deviation δ, so the standard de- viation of (the size of the cloud in the complex plane) is √ 2δ. FIG. 5. Robustness of sensing performance to fluctuations in the metamaterial elements' experimental polarizability. For a single realization with N = 64 and M = 5, the LISP is trained with the expected polarizability value. Then, its per- formance is evaluated after adding different amounts of white noise to the metamaterial elements' polarizabilities. The pur- ple curve and shaded area indicate average and standard de- viation over 250 realizations of the polarizability fluctuations. For reference, the blue curve and shaded area indicate the av- erage performance with random metasurface configurations, see Fig. 4(a), which is independent of polarizability fluctua- tions since it does not rely on optimized wavefronts. In Fig. 5 we display the dependence of the sensing per- formance of our LISP scheme as a function of the polar- izability fluctuations around the expected value. Mean and standard deviation over 250 realizations of fluctu- ations are shown in purple. Up to 5% of fluctuations, the performance does not display any notable changes; around 10% a very slight degradation of the performance is observed. The benchmark for comparison here is the 10 case of using random illuminations since these do not rely on carefully shaped wavefronts and are thus not affected by experimental polarizability values different from the expected ones. Compared to the performance with ran- dom illuminations, our scheme is still clearly superior even for unrealistically high fluctuations on the order of 15%. These results suggest that realistic deviations from the expected polarizability values of the metamaterial el- ements, due to fabrication tolerances or other neglected effects, are by no means detrimental for our scheme. V. OUTLOOK In spite of the encouraging robustness results shown in the previous section IV C, it is worth considering how one would deal with significant fabrication inaccuracies in ex- perimental metasurfaces. Should one or several param- eters of the metasurface design, such as polarizabilities or locations of the metamaterial elements, turn out to significantly vary due to fabrication issues, an additional calibration step could easily learn the actual parameter values of a given fabricated metasurface. The spirit of this procedure is similar to the way in which we achieved beam synthesis (see Section B.3 of the Supplemental Ma- terial) using only the analog part of our pipeline. The parameters to be determined are declared as weight vari- ables to be learned during training and initialized with their expected values. Then experimentally the radiated fields for a few different metasurface configurations are measured and a cost function is defined to minimize dur- ing training the difference between the measured and ex- pected radiated fields. By the end of the optimization, a set of parameter values will have been learned that opti- mally matches the experiment. Furthermore, for practical applications it may be of in- terest to achieve a certain robustness to fluctuations in the calibration parameters such as geometrical details of the experimental setup [14, 74, 75]. By including ran- dom realizations of major calibration parameters within the expected range of fluctuation during the training, the network can learn to be invariant to these variations [14]. Ultimately, this enables the transfer of knowledge learned on synthesized data to real-life setups without additional training measurements. For a specific task such as hand gesture recognition, synthetic scenes can easily be gener- ated with appropriate 3D modelling tools. In future implementations, it may be worthwhile to in- clude additional measurement and processing constraints in the LISP, such as phaseless measurements and few-bit processing [76], to lower the hardware requirements fur- ther. With more advanced forward models beyond the first Born approximation, quantitative imaging may be- come possible, for instance of the dielectric constant in contexts ranging from the detection of breast cancer to the inspection of wood [77, 78]. In practice, incremental learning techniques [79, 80] may enable one to adapt the LISP efficiently to new circumstances without retraining from scratch, for instance if an additional class is to be recognized. Finally, a conceptually exciting question for future re- search is how we can conceive a LISP that is capable of taking real-time on-the-fly decisions about the next opti- mal scene illumination, taking into account the available knowledge from previous measurements [81]. VI. CONCLUSION In summary, we have shown that integrating the phys- ical layer of a wave-based sensor into its artificial-neural- network (ANN) pipeline substantially enhances the abil- ity to efficiently obtain task-relevant information about the scene. The jointly optimized analog and digital layers optimally encode relevant information in the measure- ments, converting data acquisition simultaneously into a first layer of data processing. A thorough analysis of the learned optimal illumination patterns revealed that they cannot be anticipated from outside the ANN pipeline, for instance by considerations to maximize the mutual in- formation or based on principal scene components, high- lighting the importance of optimizing a unique analog- digital pipeline. As concrete example, we considered the use of dynamic metasurfaces for classification tasks which are highly rel- evant to emerging concepts of "context-awareness", rang- ing from real-time decision making in automotive secu- rity via gesture recognition for touchless human-device interactions to fall detection for smart health care of el- derly. The dynamic metasurfaces, thanks to their inher- ent analog multiplexing and structural compactness, are poised to play an important role in these applications. 11 Moreover, the sub-wavelength nature of the embedded metamaterial elements enabled us to formulate a very compact analytical forward model based on a coupled- dipole description that we then combined with the ma- chine learning framework of our Learned Integrated Sens- ing Pipeline. Several traditional inverse-design hurdles like binary constraints on the analog weights and cou- pling between metamaterial elements were cleared with ease in our scheme. In addition to a substantially higher classification accuracy, we observed that our scheme is more reliable (very low performance fluctuations across realizations) and very robust (against fabrication inaccu- racies). The ability to very efficiently extract task-relevant in- formation greatly reduces the number of necessary mea- surements as well as the amount of the data to be pro- cessed by the digital layer, which is very valuable in the presence of strict timing constraints as found in most ap- plications. We expect our work to also trigger interesting developments in other areas of wave physics, notably op- tical and acoustic wavefront shaping [82, 83]. ACKNOWLEDGMENTS M.F.I., A.V.D. and D.R.S. are supported by the Air Force Office of Scientific Research under award number FA9550-18-1-0187. The project was initiated and conceptualized by P.d.H. with input from M.F.I. and R.H. The project was con- ducted and written up by P.d.H. All authors contributed with thorough discussions. [1] P. Sebbah, Waves and Imaging through Complex Media Vol. 1 (IEEE, 2015) pp. 1 -- 8. (Springer Science & Business Media, 2001). [2] J. Hasch, E. Topak, R. Schnabel, T. Zwick, R. Weigel, and C. 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Detailed Description of the Physical Layer In this section we provide, for completeness, the equa- tions used (i) to compute the dipole moments and (ii) to describe the propagation to the scene. We refer the inter- ested reader to Ref. [1] and Ref. [2], respectively, where these expression are derived in a more general form. 1. Dipole Moments for Array of Interacting Dipoles The goal of this section is to compute the dipole mo- ments of each radiating element for a given configuration to then use them to compute the radiated field in the scene as detailed in Section VI A 4. The metamaterial elements can be described as mag- netic dipoles due to their small size compared to the wavelength. Using surface equivalent principles [3], an equivalent polarizability tensor α for a given metamate- rial element can be extracted. The metamaterial's dipole moment m is then determined as m(r) = α Hloc(r), (S1) where Hloc is the local field at the metamaterial's posi- tion r. For the example metamaterial element shown in the inset of Fig. 1(a) in the main text (a tunable cELC- resonator [4, 5]), at the working frequency of f0 = 10 GHz (wavelength λ0 = 0.03 m), only the αyy component of the polarizability tensor is significant [1]. This simplifies Eq. S1 to my(r) = αyy H loc y (r) (S2) The crux now lies in computing the local field H loc y (r) exciting a given metamaterial element. H loc y (r) is a su- perposition of the cylindrical wave feeding the waveguide, H f eed (r) radiated from the y other metamaterial elements: (r), and the fields H interact y H loc y (r) = H f eed y (r) + H interact y (r). (S3) The analytical expression for H f eed y (r) reads H f eed y (r) = iIek 4 1 (kr − r0) sin(θ), H(2) (S4) where i is the imaginary unit, Ie is the amplitude of the electric line source generating the feed wave (taken to be 1 A in the following), k = 2πf0/c is the propagation constant of the fundamental mode inside the waveguide, H(2) is a first order Hankel function of the second kind, r0 1 is the position of the source, and θ is the circumferential angle around the source measured from the y-axis. The space inside the waveguide we consider is empty (not filled with a substrate). y The field H interact (ri) exciting the ith dipole due to the presence of other dipoles can be related to the Green's function Gyy(ri, rj) between the element under consider- ation at position ri and the jth element at position rj as H interact y (ri) = Gyy(ri, rj) my(rj). (S5) The self-interaction term, i.e. i = j, is included in the definition of effective polarizability, as detailed in Sec- tion II of Ref. [3]. Note that Eq. S2 and Eq. S5 are coupled via the my(rj) term. To compute the dipole mo- ments my(rj), we thus have to solve a system of coupled equations. First, rearranging both to yield an expression for H loc y (ri) yields (cid:88) i(cid:54)=j y (ri) = α−1 H loc (cid:88) i(cid:54)=j yy my(ri), (S6a) (S6b) H loc y (ri) = H f eed y (ri) + Gyy(ri, rj) my(rj). Next, we rewrite Eq. S6 in matrix form: AM = F + GM, (S7) where A is a diagonal matrix whose diagonal entries are α−1 yy (all metamaterial elements are identical), M is a vector containing the sought-after dipole moments, G is a matrix whose entry (i, j) corresponds to the Green's function between elements at positions ri and rj (the diagonal entries are set to zero since the self-interaction terms are incorporated into the effective polarizabilities in A), and F is a vector containing the fields due to the feeding wave at the element positions. Solving Eq. S7 for M then yields M = {A − G}−1F. (S8) Now, the remaining step is to identify an expression for the inter-element Green's function Gyy(ri, rj). The inter-element coupling consists of two components -- in- teractions via the waveguide (WG) and interactions via free space (FS): Gyy(ri, rj) = GW G yy (ri, rj) + GF S yy (ri, rj). (S9) The waveguide interaction component reads (cid:17) (cid:16) (cid:32) yy (ri, rj) = − ik2 GW G 8h 0 (kR) − cos(2φ) H(2) H(2) 2 (kR) , (S10) where R = ri − rj and φ is the angle of the vector from ri to rj. The free space interaction [? ] is given by ik R y R2 GF S k2 + yy (ri, rj) = g(R) − 1 + k2∆2 3∆2 y R4 (S11) where ∆y = yi − yj and g(R) = 2 e−ikR 4πR . The factor 2 in the expression for g(R) originates from self-images of the elements due to the waveguide's metallic upper plate. R3 + − 3ik∆2 y 2. Visualization of Dipole Interaction In this section we provide a visualization of the impor- tance of accounting for the coupling between different metamaterial elements. To that end, we first compute for a random configuration of the metasurface shown in Fig. 1(a) of the main text the corresponding dipole mo- ments for each metamaterial element. We compare this with a linear superposition of the individual elements, i.e. omitting the presence of other dipoles in calculating each element's dipole moment. The comparison in Fig. S1 clearly shows the non- negligible difference between the two results, highlighting the importance of accounting for the coupling between metamaterial elements. 16 FIG. S1. Comparison of the dipole moments my computed for each metamaterial element, without (black) and with (pur- ple/cyan) accounting for the coupling between elements. The dipole moments are represented as phasors, with the radius of the circle being proportional to their amplitude, and the line segment showing their phase. The circles are centered on the physical location of each metamaterial element. (cid:33) mechanism. Any phase or amplitude tuning is relative to the element's polarizability αyy; for instance, the tuning states "on" and "off" that are accessible with a metama- terial element tuned via PIN-diodes connected across the , cELC's capacitive gaps [5] correspond to multiplying the polarizability by 1 or 0. If the polarizability is zero, the element is not radiating any energy and is hence essen- tially non-existant. This simple picture neglects ohmic losses associated with the PIN diodes when they are in conducting mode (i.e. the metamaterial element is not radiating); these losses are usually small but could be accounted for in any given practical implementation. Consider a general tuning state described via a vector T whose jth entry tj corresponds to the tuning of the jth element. The element's polarizability is then tjαyy. Correspondingly, the jth diagonal entry of A becomes {tjαyy}−1. In practice, to avoid issues related to division by zero, we use {tjαyy + δ}−1 with δ being four orders of magnitude smaller than αyy. A simple sanity check to confirm the above procedure consists in computing the magnetic dipole moments cor- responding to a binary (random) configuration T and comparing the result to that obtained if elements in the "off" state are simply omitted. Ideally the same magnetic dipole moments are computed for the "on" elements in both cases. This is indeed the case, as shown in Fig. S2. 3. Tuning Mechanism 4. Propagation to Scene So far, the above calculations are for a device that is not reconfigurable, i.e. all included dipoles are radi- ating energy. For our scheme based on reconfigurabil- ity it is hence crucial to add a description of the tuning Having found a description of the transceiver ports in terms of dipole clusters, we can now proceed with com- puting the fields illuminating the scene for a given choice of physical layer weights. The considered setup is shown 17 (cid:90) scene We can thus compute the ith measurement (a complex- valued scalar), obtained with the ith pair of TX/RX physical weights, as gi ∝ ETX i (ζ) · ERX i (ζ) σ(ζ) dζ, (S14) where σ is the scene reflectivity. Here, we choose to work with a reflectivity corresponding to the gray-scale pixel values of an image from the MNIST dataset of handwrit- ten digits [7]. In general, Eq. S15 relies on a first Born approximation which is appropriate for our flat scene (no variation in the x-direction). B. Details of Artificial Neural Network Algorithm and Parameters In this section, we detail the implementation of our method using a low-level API of the open source machine learning library TensorFlow [8]. The ANN architecture has been described in the main text. We use the float32 and complex64 data types for real and complex valued variables, respectively. Since the metamaterial elements are separated by at least a wavelength, the arguments of the Hankel functions in Eq. S4 and Eq. S10 are always above unity (kR ≥ 2π). We thus evaluate these Hankel functions with the following large-argument approximation: FIG. S2. Sanity check of the tuning mechanism considering metasurfaces with 64 metamaterial elements. The top figure shows the spatial layout of the considered metasurfaces, as well as the chosen (random) configurations: filled elements are "on", unfilled elements are "off". The bottom row contrasts the computed dipole moments for the two metasurfaces, once using {tjαyy + δ}−1 as entries of the diagonal of A (black) and once omitting the "off" elements and using {αyy}−1 as entries of the diagonal of A (green). Excellent agreement is seen. (cid:32) (cid:88) j (cid:32)−ik Γj in Fig. 1(b) in the main text. To that end, we compute the superposition of the radiated fields from all dipoles in the scene as ETX(ζ) = −iωµ0 4π (m(rj) × ρj) − 1 Γ2 j e−ikΓj (S12) where ζ is a position in the scene, ω = 2πf0, Γj = ζ−rj, ρj is a unit vector parallel to ζ − rj and m(rj) is the dipole moment of the jth transmit (TX) dipole located at position rj. in our case, we can evaluate m(rj) × ρj as follows: Given that only the y-component of m(rj) is significant  0 0 my(rj)  × (xζ − xrj )/Γj (yζ − yrj)/Γj (zζ − zrj)/Γj  =  zζ − zrj xrj − xζ 0  , my(rj) Γj (S13) where xζ denotes the x-component of ζ etc. Hence ETX has non-zero components along z and x, with z being the dominant one. These fields are then reflected by the scene and the receive (RX) port captures the reflected fields. The en- tering fields at the RX port are simply the time-reversed version of an expression analogous to that given for the exiting fields at the TX port in Eq. S13. Note that the physical layer weights are implicitly ac- counted for in Eq. S13 via the dipole moments as dis- cussed in Section VI A 3. (cid:33) (cid:33) , η (ξ) −−→ H(2) ξ>1 (cid:114) 2 πξ e−i(ξ− ηπ 2 − π 4 ). (S15) c and b(2) We initialize the bias variables (b(1) p in Fig. 2 of the main text) as zero. Weight variables are initial- ized with a truncated normal distribution [? ]; mean and standard deviation of the latter are zero and 0.12, respec- tively, for the digital weight variables (w(1) c,p in Fig. 2 of the main text) and zero and 0.2, respectively, for the physical weight variables tj,i. p,i and w(2) 1. Training Algorithm and Parameters We use the MNIST dataset of handwritten digits [7] which consists of 60000 samples of 28× 28 gray-scale im- ages of handwritten digits from 0 to 9 and 10000 further such samples to test the learned network. For training, we split the training dataset and use 15 % for valida- tion purposes. Using a batch size of nbatch = 100 and the Adam method for stochastic optimization [10] with a step size of 10−3, we train the weight variables of the network based on the training dataset, using the cross entropy between the known and predicted labels as error metric to be minimized. Every 50 epochs we compute the accuracy achieved on the validation dataset. We define a patience parameter to avoid overlearning on the training dataset: if the validation accuracy has not improved for seven consecutive times, we stop training. Finally, we evaluate the achieved accuracy on the completely unseen test dataset. This is the accuracy we report in the main text. Since our measurements are complex-valued, we stack real and imaginary parts of the M measurements in a 1 × 2M real-valued vector M; then we feed M into the first fully connected layer. A subtle but crucial detail is the need to normalize M. If its standard deviation is sev- eral orders of magnitude above or below unity, training the weights of the fully connected layers may take much longer or be unfeasible, in particular in combination with the temperature parameter (see below). Hence, we first identify a normalization constant as the average of the standard deviation of M obtained for ten different ran- dom TX and RX masks (obeying the chosen constraint such as amplitude-binary) using the training dataset. We then always divide M by that fixed normalization con- stant in the subsequent training, validation and testing. In other words, the normalization constant is fixed once and for all based on the training dataset. The employed activation functions are defined for real- valued inputs as follows. A "rectified linear unit" (ReLu) activation function returns 0 if its argument x is negative: fReLu(x) = max(x, 0). (S16) A SoftMax activation normalizes a p-element vector Y = [Y1, Y2, . . . , Yp] into a probability distribution consisting of p probabilities whose sum yields unity: fSof tM ax(Yp) = eYp(cid:80) p eYp . (S17) 2. Imposing a Discrete Distribution of Weights In this section, we provide the technical details of how we restrict the physical layer weights to be chosen from a list S of s predefined discrete values. For instance, the reconfiguration mechanism of the metamaterial elements may leverage PIN-diodes such that a given element is either resonant or not at the working frequency f0, which corresponds to a binary on/off amplitude modulation: S = {0, 1}. Our procedure can also be directly applied to gray-scale tuning, for instance in the case of a phased- array with 2-bit phase modulation we would use S = {1, i,−1,−i}. (Preliminary tests showed little gains in the sensing performance with gray-scale tuning compared to amplitude-binary tuning.) The ANN weight variables are, however, trained via back-propagating errors [11] which relies on computing gradients. This approach is thus, at first sight, incom- patible with variables that can only take a few discrete values. An elegant solution to this apparent problem con- sists in using a temperature parameter [12]. The general 18 idea is to start with a continuously-distributed weight variable and to gradually force its distribution to become more and more discrete over the course of the iterations. By the end of the training, the weights are then effec- tively discrete and chosen from S. We define a scale factor β that increases according to a quadratic schedule with the number of iterations T : β(T ) = 1 + (γT )2, (S18) i): ti =(cid:80) where we use γ = 0.0005. For every variable ti to be trained, we introduce an s-element vector Vi = [ti,1, ti,2, . . . , ti,s]. We then multiply the absolute value of Vi with the scale factor β and apply a SoftMax oper- i = fSof tM ax(βVi). We go on to ation (see Eq. S17): V(cid:48) define ti as a sum of its possible values Sj ∈ S weighted by t(cid:48) i,j (the entries of V(cid:48) i,jSj. The entries of Vi are declared as weight variables and are trained via error back-propagation. The SoftMax function in combi- nation with the gradually increasing scale factor ensures that eventually V(cid:48) i ends up having one unity entry and the remaining entries become zero. We thus gradually transition from a continuous to a discrete distribution. To ensure that the ti variables are indeed binary after training, we defer checking the patience parameter until min(ti,j, 1 − ti,j)i,j is below 0.0001. j t(cid:48) 3. Constrained Beam Synthesis / Wavefront Shaping This section is motivated by the wish to compare the performance of our Learned Integrated Sensing Pipeline (LISP) not only with random illuminations but also with orthogonal and PCA-based illuminations. For PCA- based illuminations, M inverse design problems of beam synthesis have to be solved to identify metasurface con- figurations whose scene illuminations approximate as closely as possible the first M PCA modes. For orthogo- nal scene illuminations, a set of M configurations has to be identified such that their scene illuminations' overlap as little as possible. Note that we do not impose a spe- cific orthogonal basis (such as the Hadamard basis); the obtained illuminations with minimal mutual overlap will thus still look speckle-like. Both of these inverse design problems are notoriously difficult due to (i) the binary constraint and (ii) the inter-element coupling [13]. Tradi- tional approaches to tackle such NP-hard combinatorial optimization problems (even without the coupling con- straint) include Gerchberg-Saxton (GS) algorithms [14] and semidefinite programming tools. Here, we choose a much simpler approach resembling "adjoint"-based methods [15, 16]. We take the analog part of our pipeline in Fig. 2 of the main text and define a new cost-function based upon Iz,i = ETX z,i (ζ) (since z is the dominant component). More specifically, we either maximize for a single mask the overlap with a principal scene component or minimize for a series of z,i (ζ) · ERX masks the average mutual overlap of the scene illumina- tions. In order to identify M illuminations with minimal mu- tual overlap, we first compute the M × M overlap matrix Ω whose (i, j)th entry is Ωi,j = O(Iz,i(ζ),Iz,j(ζ)), where O is the overlap function as defined in Eq. 6 of the main text. Next, we compute the average mutual overlap as the average of the off-diagonal entries of Ω and use that as cost function to be minimized: (cid:104)Ωi,j(cid:105)i(cid:54)=j. In order to identify an illumination pattern that matches a given PCA mode P as closely as possible, we compute the overlap of the scene illumination Iz with P and use its inverse as cost function to be minimized: 1/O(Iz,P). Minimizing this cost function will maximize the resemblance of Iz to P. Using the temperature parameter as before ensures that during training the weights are carefully driven to- wards a binary distribution. This simple approach to deal with constraints and even coupling effects, only requiring the formulation of an analytical forward model, may also prove useful in other constrained physical inverse design problems, from nano-photonic inverse design [17] and op- tical wavefront shaping with digital micromirror devices [18] via beam synthesis with phased-arrays in the mi- crowave domain [19, 20] to infrared metamaterial phase holograms [21]. 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1809.06356	1	1809	2018-09-04T16:19:11	Plasmonic sensor based on the Ebbesen effect	[ "physics.app-ph", "physics.optics" ]	We present a new method for measuring low concentrations and simultaneously small volumes of fluorescent molecules based on the use of the Ebbesen effect of the extraordinary transmission (EOT) of light through an array of nano-holes. In the method the EOT effect is realized at the fluorescence wavelength of the detected molecules with a low transmission of light at the absorption wavelength. The approach allows realizing high level of the sensor sensitivity due to suppression of the inevitable parasitic luminescence of the sensor substrate. The method was demonstrated by detecting an ultra low concentration (at a level of 20 pg/ml (3 p.p.t.)) and an ultra-small volume (about 5 {\mu}l) of Cy-5 fluorescent markers in a dimethyl sulfoxide solution.	physics.app-ph	physics	Plasmonic sensor based on the Ebbesen effect P.N. MELENTIEV,1,2,* A.S. GRITCHENKO,1,2 A.S. BABURIN,3,4 N.A. ORLIKOVSKY,3,4 A.A. DOBRONOSOVA,3,4 I.A. RODIONOV,3,4 V.I. BALYKIN1,2 1 Institute of Spectroscopy RAS, Troitsk, Moscow 108840, Russia 2National Research University, Higher School of Economics, Moscow 101000, Russia 3Bauman Moscow State Technical University, Moscow 105005, Russia 3 Dukhov Research Institute of Automatics, Moscow 127055, Russia *Corresponding author: [email protected] for measuring counting (SMC) sensors (a small volume reduces parasitic luminescence helping realization a single molecule detection) [6]. Received XX Month XXXX; revised XX Month, XXXX; accepted XX Month XXXX; posted XX Month XXXX (Doc. ID XXXXX); published XX Month XXXX We present a new method low concentrations and simultaneously small volumes of fluorescent molecules based on the use of the Ebbesen effect of the extraordinary transmission (EOT) of light through an array of nano-holes. In the method the EOT effect is realized at the fluorescence wavelength of the detected molecules with a low transmission of light at the absorption wavelength. The approach allows realizing high level of the sensor sensitivity due to suppression of the inevitable parasitic luminescence of the sensor substrate. The method was demonstrated by detecting an ultra low concentration (at a level of 20 pg/ml (3 p.p.t.)) and an ultra-small volume (about 5 μl) of Cy-5 fluorescent markers in a dimethyl sulfoxide solution. In this work we present a method based on the use of the EOT light transmission through an array of nano-holes perforated in a metal film (plasmonic crystal, PC) that allows suppressing the various types of parasitic luminescence and having sensitivity approaching sensitivity of the SMC sensors. We develop a new type of sensor based on (1) optical excitation of molecules, (2) their subsequent fluorescence detection and (3) the use of the Ebbesen effect of the extraordinary transmission of light (EOT). OCIS codes: (310.6845) Thin film devices and applications; (300.2140) Emission; (300.2530) Fluorescence, laser-induced; (250.5403) Plasmonics; (240.6680) Surface plasmons. http://dx.doi.org/10.1364/OL.99.099999 Small concentration detection is extremely important both in fundamental research and in various applications. The ability to detect a single atom or molecule is a key aspect of studying the single quantum object properties and QED effects [1-5]. The practical importance of ultra low concentration detection at a level of single molecules is the clinically relevant biomarkers detection in blood serum [6-8]. The most developed methods of single molecule detection are based on their fluorescent measurements [3,4,6-9]. However, the practical implementation of single-molecule sensitivity, as a rule, is limited by the background parasitic signal [3,4]. Such background signal has different origins: (1) scattering of laser light, (2) luminescence of various materials (substrates, solvents). As a result it is hard to eliminate the luminescence of media surrounding the detected molecule from a molecule fluorescence leading to the known trade-off between a volume of molecules excitation (a fast measurements) and sensitivity of corresponding single molecules large volume to perform is needed The EOT effect is already used in sensorics [10]. It was shown that small variations in the refractive index (RI) of media adjacent to nanoholes array (plasmonic crystal) lead to changes in the dispersion of excited plasmonic waves, which in turn results in shifting of the resonant wavelength of the EOT effect measured through an optical transmission of the nanoholes array [11-16]. Note that the sensors based on such a use of the EOT are characterized by a moderate sensitivity and in principle can't reach the SMC sensors sensitivity, since the RI change due to a single molecule presence is negligible compared to the RI changes caused by the temperature or the pressure instabilities. The minimal detecting RI change corresponds to 108 molecules introduced in the sensor detection region [17]. In this work, we utilize the EOT effect in a completely new way to perform effective fluorescence measurements: to create an optical filter, which allows a significant increase in the signal-to- noise ratio, due to a significant decrease in parasitic substrate luminescence. The spectral transmission of the PC (nanoholes array) is chosen in such a way: (1) to achieve high transmission of light (the EOT effect) at the wavelength of the molecule fluorescence and, (2) to achieve low light transmission at the laser wavelength. In such approach one can significantly suppress parasitic luminescence of the substrate caused by the exciting laser light, which is usually the main limitation factor of sensor sensitivity based on the fluorescence measurements of arbitrary large volumes of analyte, namely more than 1 nl. Note that the sensitive fluorescence measurements of such arbitrary large volumes are a key factor in reaching fast measurements of SMC sensors [6]. reduce to substantially We note as well that such sensor allows further increasing the sensitivity through another effect. Fabrication of high quality PC helps large background signal accompanying sensing through a transparent dielectric substrate. The large background signal is formed by a laser scattering on the quartz surface and the particles luminescence on the surface. These surface imperfections have different origins: surface polishing defects, adsorption of particles from air, etc. The detection of molecules fluorescence through a high quality PC has two main advantages. First, luminescence from such particles does not enter the detection zone of fluorescence, since the microparticles block the passage of light through the nanohole. Second, most of the particles are located between nano-holes, and their luminescence does not reach the detection zone. Fig. 1. The plasmonic sensor based on the Ebbesen effect: (a) a schematic diagram of the sensor, (b) an electron microscope image of a PC formed by a matrix of nano-holes perforated in a 100 nm thick silver film. The EOT transmission through a PC formed by nanoholes perforated in metal film consists in the energy transfer of the incident light wave through the PC to its other side via surface plasmons [11,18,19]. The light transmission through the PC can be much higher than, so-called, geometric transmission, determined by the total area of all the holes of the PC. At normal illumination of a PC, the wave vector of the excited plasmon wave is determined by the following expression [18]: 𝑘⃗ 𝑆𝑃𝑃 = ( 2𝑛𝑥𝜋 Λ ) 𝑖 + ( ) 𝑗 2𝑛𝑦𝜋 Λ Here  is the pitch of nano-holes array, nx and ny are integers. Thus, spectral regions of the EOT effect and low light transmittance of a PC are realized at the wavelengths determined by the period of the nano-hole array [18,19]. Fig. 1a illustrates the design of a plasmonic sensor. The senosor is built in such a way to effectively measure fluorescence of a single drop of Cy-5 molecules in a solution. The sensor is based on the use of ultra-high quality PC [20-22], formed by the nanoholes of 175 nm diameter perforated in 100 nm thick large grains silver film [23,24] on a quartz substrate (Fig. 1b). The size of the nano-holes array is 1 × 1 mm. In the sensor, we used an analyte solution (Cy-5 dye molecule in dimethyl sulfoxide, DMSO) placed between two surfaces: (1) a PC surface and (2) a surface of a YAG substrate with a low surface roughness (Shinkosha Ltd.). In the YAG substrate the two 2 mm diameter holes were formed for input and output of the analyte. Between these surfaces the quartz stripes were arranged to create a 100 m thick gap. The listed components of the plasmonic sensor are glued together, which gives the sensor a mechanical stability, tightness and ease of use. The volume of the plasmonic sensor which is filled by analyte is equal to 5 μL. A drop of analyte solution is introduced into the sensor using a pipetator through one of the holes made in the YAG substrate. Further, by the forces of surface tension, this drop itself is dragged into the sensor, and it is spread evenly without bubbles over the entire surface of the PC. Fig. 2. Spectral selectivity of a plasmonic sensor based on the Ebbesen effect: (a) excitation spectra of Cy-5, (b) transmission spectra of nanoholes arrays having different pitch . The dashed line indicates the laser wavelength  = 628 nm. We note that a detailed theoretical analysis of the plasmonic sensor under investigation is a rather difficult problem, requiring consideration of a number of effects: (1) the excited spatial hybrid "photon + plasmon" modes [20], (2) changes in the refractive index of DMSO when Cy-5 molecules are introduced into it [25], (3) the adsorption of Cy-5 molecules on the surface [26], (4) the change in the transmission of light through the nanoholes when the Cy-5 molecules are close to the nanohole [27], (5) the QED effects in the fluorescence of molecules near the nanohole [28]. The plasmonic sensor was located in the object plane of the Nikon Eclipse/Ti-U microscope. The sensor is illuminated by laser radiation at wavelength  = 628 nm and a power of 10 mW from a diode laser. The laser radiation illuminates the surface of the PC normally to the Ag film. The size of the laser spot on the sample equals to 20 μm. The fluorescence of Cy-5 molecules excited by laser radiation is passed through the nanohole array and collected with a ×10 microscope objective on the EM CCD camera (Princeton Instruments). The CCD camera is installed next to a bandpass filter with a bandwidth of 100 nm, corresponding to the center of the fluorescence wavelength of the Cy-5 dye (see Fig. 2a). Fig. 2b presents the measured transmittance spectra of various sensors formed by PCs with different pitches of nanoholes arrays : 545 nm, 555 nm, 565 nm, 575 nm and 585 nm. This figure clearly shows spectral windows of high and low transmission of light due to the EOT effect. During these measurements, the sensors were filled with a pure DMSO solution without Cy-5 molecules. As it can be seen from the figure, the transmission spectra are characterized by a region of high and low transmittance. The spectral position of these regions depends on the nanoholes arrays pitch . The smallest transmission at the wavelength  = 628 nm is realized through a PC with a nanoholes array pitch  = 565 nm. The measured transmittance equals to Texc = 0.03% (PC transmittance at the wavelength of laser light). Such a strong attenuation of laser radiation by a PC makes it possible to significantly weaken the luminescence of the quartz substrate excited by laser radiation. The highest transmission of a PC with  = 565 nm is realized at wavelength of the Cy-5 molecules and is equal to TCy-5 = 5% (PC transmittance at the wavelength of Cy-5 molecules luminescence). Thereby, the sensitivity increase realized by the PC is characterized by the figure of merit FOM = TCy-5 / Texc  166. Note that such a high FOM value is a consequence of the high quality of the PC formed by: (i) silver film having minimal losses for plasmon waves, (ii) identical size and shape of nanoholes, (iii) identity of the distance between nanoholes on the entire area of the PC. Fig. 3. Detection of Cy-5 molecules in the DMSO solution with the plasmonic sensor: (a) measured by 2D CCD camera luminescence of a pure DMSO solution without Cy-5 molecules in the plasmonic sensor; (b) the measured luminescence of a Cy-5 molecules solution having concentration n = 40 pg/ml in the plasmonic sensor; (c) measured by 2D CCD camera amplitudes of luminescence of different concentrations of a Cy-5 molecules solution introduced in the plasmonic sensor. The light-green curves in Figures (a) and (b) show sections of optical images. Fig. 3 presents the results of measurements of the fluorescence of Cy-5 molecules dissolved in DMSO at different concentrations and clearly shows that fluorescence measurements with the use of the EOT effect can realize detection of ultra low concentrations of Cy-5 molecules.. Fig. 3a shows an optical image of the PC surface on a CCD camera in the case of a pure DMSO solution (without Cy- 5 molecules) in the sensor. As can be seen in the figure, the optical image shows a white spot corresponding to the luminescence of the quartz substrate used to build the sensor. The green curve in the graph corresponds to the image cut of the spot along the horizontal axis. The amplitude of this parasitic luminescence determines the minimum detectable concentration of dye molecules by the sensor. When a solution of Cy-5 dye molecules with a concentration of 40 pg/ml is introduced into the sensor, a noticeable increase in the recorded signal occurs in the image on the CCD camera (Fig. 3b). Comparison of the images in Fig. 3a,b shows a three-fold increase of the signal when a solution of the dye molecules is introduced. Fig. 3c presents detection of various concentrations of Cy-5 molecules in a DMSO solution. From this figure it can be seen that the measured fluorescence signal directly depends on the concentration of the Cy-5 molecules in the solution and the plasmonic sensor allows one to confidently register the dye molecules in the range from 20 pg/ml to 400 pg/ml. The minimum recorded concentration of dye molecules is 20 pg/ml (3 p.p.t.). This is the concentration at which the detected fluorescence signal from the molecules is twice as high as the level of parasitic luminescence. At such a low concentration of Cy-5 the distance between molecules is about 3.5 μm. With the chosen laser beam sizes, this concentration corresponds to detection of only about 103 Cy-5 molecules in the entire volume of the plasmonic sensor (compared to about 108 molecules for RI sensors), which corresponds to detection of the total dye molecules mass less than 1 atto gram which is a new record in plasmonic sensor sensitivity [17,29]. Note that the sensitivity is approaching the detection limit of SMC sensors, since for the SMC sensors it is needed to detect more than 103 molecules to exceed a shot noise due to the Poisson molecule sampling [6]. The SMC sensors demands hours to detect statistically reliable data [6], while our approach helps to detect the same number of molecules during a single short of laser light. In the investigated range of concentrations of dye molecules, the detected fluorescence signal should be proportional to the number of molecules. However, as can be seen from Fig. 3c, the measured fluorescence dependence of Cy-5 molecules has a much more complex dependence. We explain the distinction by the quenching of the molecules fluorescence when they form agglomerates, since the number of agglomerated molecules directly depends on their concentration [30]. The Cy-5 dye molecules used in the plasmonic sensor are known as fluorescent biomarkers [31]. These molecules can be attached through appropriate antibodies to various biomolecules which are serving as markers of various processes in the human body [32]. Thus, the demonstrated plasmonic sensor has a potential to become a hardware platform for the medical applications using small volume of blood plasma which has to be analyzed at the highest sensitivity level competitive with SMC sensors. Summarizing, we have developed plasmonic sensor of fluorescent biomarkers Cy-5, based on the use of Cy-5 fluorescence measurements through a PC having high level of spectral selectivity realized by the EOT effect. A record level of sensitivity is shown with the use of plasmonic structures pawing a way to new types of ultrasensitive plasmonic sensors. Funding. Russian Foundation for Basic Research (17-02- 01093); Advanced Research Foundation (contract number 7/004/2013-2018 on 23.12.2013). Acknowledgment. We for helpful discussions. Samples were made at the BMSTU Nanofabrication Facility (Functional Micro/Nanosystems, FMNS REC, ID 74300). thank V.V. Klimov References 1. K. Kneipp, Y. Wang, H. Kneipp , L. T. Perelman, I. Itzkan, R. R. Dasari, and M. S. Feld, Phys. Rev. Lett. 78, 1667 (1997). 2. С. Zander , J. Enderlein, and R. A. Keller, in Single Molecule Detection in Solution: Methods and Applications, C. Zander, J. Enderlein, R. A. Keller, eds. (Wiley-VCH, 2002), pp. 386. 3. K. P. 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1805.00263	1	1805	2018-05-01T10:20:06	Can we use time-resolved measurements to get Steady-State Transport data for Halide perovskites?	[ "physics.app-ph" ]	Time-resolved, pulsed excitation methods are widely used to deduce optoelectronic properties of semiconductors, including now also Halide Perovskites (HaPs), especially transport properties. Howev-er, as yet no evaluation of their amenability and justification for the use of the results for the above-noted purposes has been reported. To check if we can learn from pulsed measurement results about steady-state phototransport properties, we show here that, although pulsed measurements can be useful to extract information on the recombination kinetics of HaPs, great care should be taken. One issue is that no changes in the material are induced during or as a result of the excitation, and another one concerns in how far pulsed excitation-derived data can be used to find relevant steady-state pa-rameters. To answer the latter question, we revisited pulsed excitation, and propose a novel way to compare between pulsed and steady state measurements at different excitation intensities. We per-formed steady-state photoconductivity and ambipolar diffusion length measurements, as well as pulsed TR-MC and TR-PL measurements as function of excitation intensity on the same samples of dif-ferent MAPbI3 thin films, and find good quasi-quantitative agreement between the results, explaining them with a generalized single level recombination model that describes the basic physics of photo-transport of HaP absorbers. Moreover, we find the first experimental manifestation of the boundaries between several effective recombination regimes that exist in HaPs, by analyzing their phototransport behavior as a function of excitation intensity.	physics.app-ph	physics	Can we use time-resolved measurements to get Steady-State Transport data for Halide perovskites? Igal Levine, Satyajit Gupta, Achintya Bera, Davide Ceratti, Gary Hodes, David Cahen Dept. of Materials & Interfaces, Weizmann Institute of Science, Rehovot, Israel Department of chemical engineering, Technical University Delft, Delft, the Netherlands Dengyang Guo, Tom J. Savenije* Instituto de Ciencia Molecular, Universidad de Valencia, Valencia), Spain Jorge Ávila, Henk J. Bolink* Oded Millo, Doron Azulay, Isaac Balberg* Racah Institute of Physics, Hebrew University of Jerusalem, Jerusalem, Israel authors for correspondence Abstract Time-resolved, pulsed excitation methods are widely used to deduce optoelectronic properties of semi- conductors, including now also Halide Perovskites (HaPs), especially transport properties. However, as yet no evaluation of their amenability and justification for the use of the results for the above-noted purposes has been reported. To check if we can learn from pulsed measurement results about steady- state phototransport properties, we show here that, although pulsed measurements can be useful to extract information on the recombination kinetics of HaPs, great care should be taken. One issue is that no changes in the material are induced during or as a result of the excitation, and another one concerns in how far pulsed excitation-derived data can be used to find relevant steady-state parameters. To an- swer the latter question, we revisited pulsed excitation, and propose a novel way to compare between pulsed and steady state measurements at different excitation intensities. We performed steady-state photoconductivity and ambipolar diffusion length measurements, as well as pulsed TR-MC and TR-PL measurements as function of excitation intensity on the same samples of different MAPbI3 thin films, and find good quasi-quantitative agreement between the results, explaining them with a generalized single level recombination model that describes the basic physics of phototransport of HaP absorbers. Moreover, we find the first experimental manifestation of the boundaries between several effective re- combination regimes that exist in HaPs, by analyzing their phototransport behavior as a function of exci- tation intensity. Keywords: Halide perovskite, diffusion length, steady-state, pulsed, charge transport, lifetime, mobility 1 I. Introduction Analysis of experimental results, obtained using transient excitation methods, is often consid- ered as equivalent to those obtained under steady-state conditions. Also in the very active field of halide perovskites, HaPs, it is assumed that the same recombination (and carrier transport) processes dominate in both types of excitations1–7. However, it remains unclear if the materials' electronic transport properties, deduced from the transient measurements, are indeed relevant for describing PV and LED behavior under steady-state conditions. Moreover, many studies have shown that strong light pulses can induce structural, morphological and electronic changes to an HaP, in some cases reversible8, but in others irreversible, which calls into question the validity and relevance of the conclusions drawn from non steady-state measurements9–15. To examine the problem, we first survey the literature for the various electronic mobilities and carrier diffusion lengths, reported for HaPs. We distinguish between two types of measurement methods: • Transient, using a pulsed light source, such as time-resolved photoluminescence (TRPL)16, Time-Resolved THz Spectroscopy17, Time of Flight (TOF)18 and Time-Resolved Microwave Conductivity (TRMC)19, and Steady-state, such as Electron Beam-Induced Current (EBIC)20, Steady-State photoconduc- tivity and Photocarrier Grating (SSPG)21,22, Scanning Photocurrent Microscopy (SPCM)23, Space Charge-Limited Current (SCLC)24 and (DC)Hall effect measurements6. • The most common, useful parameter that can be measured by, or extracted from one or more of the above-mentioned methods is the diffusion length of one or both of the electronic charge carrier types, electrons and holes. The principal parameter, extracted from transient measure- ments such as TRPL, is the radiative lifetime of the photoexcited carriers, τrad, which is assumed to be the shortest one, i.e., the lifetime of the minority carriers16. For HaPs a wide variety of τrad values can be found in the literature, ranging from several ns to a few μs. Moreover, although ideally τrad should be measured under 1-sun equivalent excitation, as we will show later, such pulsed measurement is nearly impossible experimentally, and therefore usually τrad is measured under different pulse energies (much higher than 1-sun equivalent intensities) and is often pulse intensity- and material-dependent, making it hard to compare results from different laborato- ries. 2 fusion equation and the Einstein relation as: (1) 𝐿= �𝑘𝑇𝑒𝜇𝜏 Although combining the two methodologies (transient and steady-state) is not trivial, due to the very different nature of the excitation involved, it has become common practice to use a com- bination of both type of methods to extract the experimentally unknown charge transport pa- rameter (diffusion length, L, or mobility, 𝜇) for the HaPs. L and 𝜇 can be related via the 1-D dif- where 𝑘 is Boltzmann constant, T is the temperature and 𝑒 is the elementary charge. Figures 1 and 2 illustrate the differences in 𝐿 values between a direct measurement, to a derived 𝐿 using Eq.1 and a combination of two different methods (steady-state for the mobility + pulsed for the life- time, or even pulsed measurements for both properties). They provide a summary of reported charge carrier diffusion lengths and mobilities (minority and/or majority carriers) for MAPbI3 (MAPI) and MAPbBr3, respectively (for the complete list of references for these data, see the SI). Figure 1: Summary of MAPI transport and phototransport parameters. Each point corresponds to a reported value. The cited numbers are the total number of samples on which the results shown were derived; the outlier on the 3 steady-state single crystals mobility plot (top right) corresponds to the value obtained with the SCLC method (Shi et al.25). The outlier on the thin films pulsed mobility plot (bottom right) was obtained using the PhotoCELIV method (Namyoung et al.26) LEFT: charge carrier diffusion lengths that were directly measured, and those that were derived using the Einstein relation, for single crystals (top, left) and thin films (bottom, left). RIGHT: Mobilities reported for single crystals (top, right) and thin films (bottom right). Figure 2: Summary of MAPbBr3 transport parameters. Each point corresponds to a reported value. The cited num- bers are the total number of samples on which the results shown were derived. LEFT: Directly measured charge car- rier diffusion lengths, compared to those, derived using the Einstein relation, for single crystals (top, left) and thin films (bottom, left); RIGHT: Mobilities reported for single crystals (top, right) and thin films (bottom, right). While for MAPbBr3 there are currently insufficient published data regarding directly-measured single crystal diffusion length and thin film mobility (steady-state or pulsed) to draw conclu- sions, it can be seen that for MAPI, the spread of values for the derived carrier diffusion lengths (1-100 µm for single crystals and 0.1-20 µm for thin films) is always larger (by 1-3 orders of magnitude) than the spread of directly measured values (10-100 µm for single crystals and 0.3-3 µm for thin films). Similarly, for MAPbBr3 thin films, it can be seen that the spread of values of the derived diffusion lengths (0.1-1.5 µm) is larger than the measured one (0.1-0.4 µm). The rel- 4 atively good agreement between the measured L values on different samples in different labor- atories for MAPI and MAPbBr3, already hints that steady-state methods which measure L, might reflect more closely the actual carrier diffusion length than the wide variety of derived L values found in the literature. A trivial reason for the large spread in values could be of course the quality of the measured MAPI samples, which might differ between laboratories. However, while there surely is a varia- tion between different samples in different laboratories, we rule out this reason on the ground that if that were indeed the main cause for the observed discrepancies, a similar spread (2-3 or- ders of magnitude) should be seen also in the measured, steady-state values, which is not the case. To further rule out that reason, we report below on results obtained with one set of sam- ples for different types of measurements. Another important parameter that is often extracted from transient measurements such as THz conductivity and time-of-flight, TOF, (electrical) measurements, is the electronic carrier mobility, μ. Here, again, a wide spread of values exists in the transient measurement literature data, ranging from 10-3 to 30 cm2/Vs for MAPI thin films, and 2-200 [cm2/Vsec] for MAPbBr3 single crystals, compared to only 1 order of magnitude variation using steady-state methods for MAPI thin films [2-10 cm2/Vsec] and MAPbBr3 single crystals [10-100 cm2/Vsec], as shown in Figure 1. Often these two parameters, μ and τ, deduced from transient measurements, are combined us- ing the Einstein relation (Eq. 1) to calculate the steady-state diffusion lengths of the charge car- riers in the studied HaP, without justifying this transition from the pulsed to the steady-state time regime. Even if the mobility-lifetime product values are obtained using steady-state meth- ods (such as EBIC, or steady-state photocarrier grating, SSPG) it is tempting to extract the steady-state mobility or lifetime from the experimentally derived mobility-lifetime product, us- ing the lifetime, which can be measured directly only by a pulsed / transient method. However, as we will demonstrate here, one would need to measure independently and under the same excitation conditions as those used in the steady-state method, the mobility or the lifetime, to properly extract the other parameter using Eq. 1. To tackle this problem in a systematic manner we use two methodologies – (1) measure different samples from different laboratories with the same methods; and (2) measure the same samples using different (pulsed and steady-state) methods. 5 By performing light intensity-dependent measurements we find that the supposedly contradict- ing results on the carrier recombination mechanism in MAPI can be reconciled by adopting an effective single level recombination center model, and more particularly, that under the right experimental conditions, results from pulsed TRMC measurements can agree with steady-state measurements. II. Experimental and theoretical background To try and understand the reasons leading to the large spreads of values, shown in Figures 1 and 2, we choose to examine these results by adopting the following approach: we compare results from pulsed and steady-state experiments by expressing the incident photon irradiation in tran- sient experiments in terms of the equivalent carrier generation rate, Geq, as if the pulsed inci- dent photon flux would impinge on the sample continuously, as in steady-state, i.e., in units of [1/cm3 sec]. To do so, the incident photon flux (usually expressed in photons/cm2) is divided by the sample` thickness (thus assuming a uniform spatial absorption profile, which is often justi- fied for sub-μm HaP films) and further divided by the lifetime of the charge carrier, electron or hole, as measured in the specific experiment (assuming that the pulse duration is much smaller than the probed lifetime, a condition that is met in all pulsed lifetime measurements). In experiments where pulsed excitation is used, the measured carrier decay kinetics can vary from 1-100s of ps in THz measurements4,7 to several or tens of µs in TRMC measurements1,19. These large differences in the charge carrier dynamics can be due to the very different pulse du- rations used for the excitation, ranging from fractions of ps in THz measurements4,7 to several ns in TRMC measurements.1,19 (An alternative, quick initial way to calculate Geq, prior to conduct- ing the actual experiment, is to divide the incident photon flux by the pulse duration, used for each pulsed method, rather than the measured carrier lifetime; this will result in ~ 2-3 orders of magnitudes higher Geq values, but we find that the general trends remain similar). While each laboratory, specialized in pulsed pump-probe measurements, has its own pump-probe setup with specific power outputs and pulse durations, the qualitative order-of-magnitude differences between the methods, applied to various HaP samples, prepared in different laboratories, can be deduced by using a range of typical laser intensities and measured lifetimes. Figure 3 shows 6 such a comparison for 3 different types of transient methods: THz measurements (blue), TRPL (green) and TRMC (orange), illustrating the resulting equivalent steady-state generation rate, Geq. All these ranges are compared to 1 sun for MAPI/MAPbBr3 (~1021-1022 [photons/cm3sec], shown by the horizontal black line). One of the major drawbacks of the pulsed methods is that usually strong light pulses are re- quired to obtain good signal-to-noise ratios4,9. As a result, as can be seen from Figure 3, Geq can change up to 3-4 orders magnitudes within the same method, depending on the experimental parameters, and reach values up to 7 (!) orders of magnitude larger than 1 sun steady-state equivalent, depending on the transient method. Thus, it is quite likely that different laborato- ries, using the same measurement technique, will perform measurements under different exci- tation conditions. Hence, this can result in large differences in the obtained values (usually of carrier lifetime), as seen in Figures 1 and 2. As a result, the quantitative, extracted values for physical parameters from such pulsed measurements can be a result of high injection, which will clearly alter the recombination kinetics of the charge carriers under study (favoring for ex- ample band-to-band bi-molecular recombination). Furthermore, due to the resulting very high values of Geq in the case of THz measurements, compared to 1 sun, 3rd order recombination pathways such as Auger recombination may become important, as was experimentally observed by Milot et al27. Obviously, this need not be the recombination scenario that is relevant (domi- nates) under steady-state, 1 sun equivalent, illumination conditions, as discussed further in the next section. In addition, or alternatively, (different) chemical changes can be induced. Howev- er, for TRMC, the resulting Geq can be in the regime of 1 sun – equivalent intensities (cf. Figure 3), and when studying different types of HaP samples, we expect to see a better agreement of TRMC results with those of steady-state measurements (vide infra) compared to those of PL or THz measurements. 7 Figure 3: Steady-state equivalent generation rate, Geq, as a function of the typical measured lifetime of the charge carriers in MAPI, depending on the experimental method, and the pulse energy. The horizontal black line corre- sponds to 1 sun equivalent of ~1021 1/cm3sec, the grey shadow area corresponds to the experimentally accessible steady-state excitation range in our study for MAPI. One of the simplest ways to describe the complex behavior of the different dominant recombi- nation scenarios under different G regimes in steady-state uses a single recombination center model, as suggested by Bube28. We define p, n >> p0, n0 total, net hole and electron densities, in units of cm-3 (for the calculations we consider the HaP to be p-type, where holes are the majority carriers, in accord- ance with what we found earlier29). Here, p0, n0, are the carrier concentrations in the dark. density of trapped holes (electrons); density of trapped electrons (holes) in the recombination level under equilibrium (dark) conditions, as indicated by the extra subscript " 0 "; because the material is considered as p-type, pr0 >> nr0. 𝑝𝑟 (𝑛𝑟) 𝑛𝑟0, 𝑝𝑟0 8 𝑁𝑟 total number of recombination centers, 𝑁𝑟=𝑝𝑟+𝑛𝑟; hole (electron) capture coefficient in the recombination centers; bi-molecular, band to band recombination coefficient; generation rate, in units of [photons/cm3 sec]. Cp (Cn) Cbi G Note that the capture coefficient of the holes, Cp, essentially describes the physical process of de-trapping of an electron, i.e., release of the trapped electron to the VB, leaving a hole in the recombination center and likewise for Cn. The model can be described by the following 3 equations: 𝑝=𝑛+�𝑛𝑟−𝑛𝑟,0�= 𝑛−𝑛𝑟,0+(𝑁𝑟−𝑝𝑟) 𝑝𝑟𝑁𝑟= 𝐶𝑝𝑝 𝐶𝑝𝑝+𝐶𝑒𝑛 𝐺=𝑛𝐶𝑛𝑝𝑟+𝐶𝑏𝑖𝑛𝑝 (II1) (charge neutrality) (II2) (detailed mass balance) (II3) (e-h recombination) We further recall that the common definition of the corresponding carrier lifetime is given by (see chapter 2 and 3 in Ref. 30): τp = 1/Cpnr = p/G (II4) and τn = 1/Cnpr = n/G (II5) We numerically solve the above equations simultaneously to obtain n, p and nr, using the fol- lowing parameters: Cn = 10-6 [cm3/sec], Cp = 10-8 [cm3/sec], Cbi = 5x10-10 [cm3/sec], nr,0 = 1012 [1/cm3] and Nr = 1016 [1/cm3] (the different capture coefficients were obtained from TRMC measurements, and are in good agreement with reported values7; for more details see section 3 of the SI). Because direct determination of n or p under photoexcitation is experimentally not practical, often only the mobility-lifetime products, 𝜇𝜏, of the majority carriers, holes in our case22, is measured via PC, and more rarely the 𝜇𝜏 product of the minority carriers (electrons in our case) is measured by SSPG, or by EBIC. By using the definitions of the lifetimes (Eqs., II4, II5, and Eq. II1), we also calculate the diffusion lengths. For simplicity, we assume that the mobilities are equal, µn = µp = 10 cm2/Vsec and independent of G-independent, as was found by Chen et al. 9 using photo-Hall measurements6, and plot the calculated carrier densities (p, n) and diffusion lengths (Lp , Ln) as function of the generation rate, G, in Figure 4. (We note that differences in the actual mobility values will only change the absolute values of L, so that the observed trends in Figures 4 will remain the same, and the only difference will be a shift up (lower mobility) or down (higher mobility) of the L-G curves in Figure 4b). Figure 4 : (a) Calculated steady-state concentrations of holes (p) and electrons (n) as function of the generation rate. (b) Hole and electron diffusion lengths, Lp and Ln, derived from the calculated hole and electron lifetimes using Eq. 1 for each generation rate by using the concentrations, given in the text (after eq. II5) and Eqs. II1 II4 and II5, at room temperature with an estimated carrier mobility of µn= µp = 10 cm2/(Vsec). The green vertical lines represent transitions between different recombination regimes, as described in the main text. We divide the calculated results in Figure 4 into five regimes, each with a different power law dependence of the carrier concentration on the generation rate. We define these power law 10 fusion lengths with G is different. We note that this model can be generalized to any (HaP) sam- dependences as follows: 𝑝∝𝐺𝛾𝑝 and 𝑛∝𝐺𝛾𝑛. For each regime, the variation of the carrier dif- ple, with varying recombination center density, 𝑁𝑟, so that different capture coefficients, 𝐶𝑝 and 𝐶𝑛 , can be used to describe differences between the samples; also, while the regimes dis- cussed below will be present, the boundaries between them will shift, depending on the 𝑁𝑟 used. Thus, Figure 4 can explain the different experimental results in the literature for HaP transport properties as function of G, as long as the translation of G from pulsed to steady-state measurements (Geq) is done in the manner, detailed in the introduction. How can we distinguish qualitatively between the five regimes, from low to high G val- ues? To that end we use the relative densities of the charge carriers, n and p, with respect to the carrier densities in the recombination level, nr and pr (for details see section S2 of the SI). Regime 1: At low G values, the photogenerated hole and electron concentrations are lower than the initial (dark) concentration of the electrons and holes that occupy the recombination level and, there- fore, 𝑛𝑟≈𝑛𝑟0, and 𝑝𝑟≈𝑝𝑟0 , (where the subscript "0" denotes the concentration of trapped G < 1016 [1/cm3sec], n, p << nr0, pr0 1016 < G < 1022 [1/cm3sec], n, p << pr0, p→nr carriers in the dark); thus, the lifetimes (or diffusion lengths) of both electrons and holes remain relatively constant as G changes in this regime. Regime 2: At intermediate G values, the concentration of photogenerated holes and electrons exceeds that in the dark, but still pr >> nr and, therefore, in practice, all the photoexcited electrons get captured immediately in the recombination centers, so that 𝑛𝑟 increases with increasing G. As a and because pr >> nr), we find that 𝑝𝑟≈𝑝𝑟0 and τn (or Ln) remains constant with respect to G, similar to regime 1. However, due to the charge neutrality, p ≈ nr (see Eq. II1) and thus we find that p ∝ G1/2 i.e., τp ∝ G-1/2 and Lp ∝G-1/4. Based on this analysis we suggest that this transition from regime 1 to 2 is the one that was observed by Chen et al.6 for solution-grown MAPI films and by Yi et al. for Br-based HaP single crystals31. result, τp (or Lp) decreases with increasing G. However, since still n << p (following Eqs. II4 & II5 11 Regime 3: 1022 < G < 1024 [1/cm3sec], p >> nr, n → pr, nr, →pr In this regime, the concentration of trapped electrons, 𝑛𝑟 increases so that it is not small com- pared to pr, but rather becomes comparable to 𝑝𝑟. Since 𝑁𝑟=𝑝𝑟+𝑛𝑟 is constant, 𝑝𝑟 will start decreasing as G (and nr) increase, and therefore τn will increase with increasing G. We note that only in this "special" regime, the minority carrier diffusion length, Ln in our case, will increase with increasing G. Based on this analysis we suggest that such a phenomenon was observed ex- perimentally by Kedem et al.32 for Br-based HaP solar cells, using the EBIC method. Regime 4: At specific G values, in our case 1024 < G < 1025, the concentration of the minority carriers (elec- trons) approaches that of the majority carriers (holes), and n ≈ p. Under these conditions, the 1024 < G < 1025 [1/cm3sec], n≈p G > 1025 [1/cm3sec], n=p >> nr, pr concentrations of 𝑝𝑟 and 𝑛𝑟 will remain constant (for the mathematical derivation, see section S2 of the SI), and the final outcome will be trap-assisted bi-molecular recombination (non- radiative). Regime 5: At high G values, in our case G > 1025, the concentrations of photoexcited holes and electrons exceed that of the recombination centers, Nr; when p and n are large enough (see green dashed line that distinguishes between regime 4 and 5, that is for p, n > 1017 cm-3 in our case) the band- to-band recombination (electron from the CB recombines directly with a hole in the VB) be- comes dominant over recombination via gap state levels. The interplay between the two pro- cesses when n = p (radiative, band to band recombination vs. non-radiative recombination via gap state levels) will be determined by the different capture coefficients, Cn, Cp and Cbi. Since Cbi is relatively small for the HaP, similar to GaAs33,34, we expect that it will be dominating for G > 1025 [1/cm3sec]. In this regime, since the dominant recombination path is the bi-molecular radi- ative one, the lifetimes of the holes and electrons will be equal and will decrease as G increases (due to higher probability for recombination events as more e-h pairs are formed), and the PL intensity should increase substantially. We note here, however, that in the lower G regimes (here regimes 1-3), which are relevant for steady-state illumination conditions close to, or be- low 1 sun (the practical operating conditions for PV without concentration), radiative recombi- 12 nation of electrons and holes in MAPI is a very low fraction of the total recombination events,22,35,36 < 5% (although this fraction can be increased by certain surface treatments, as was recently reported37 ). Therefore, if any conclusions are to be drawn from TRPL for steady-state measurements in regimes 1-3, one should keep in mind that these conclusions apply to this very small fraction of electron-hole pairs, and not to the majority of the charge carriers undergoing recombination in these ranges of G values (Geq > 1024 [1/cm3sec]). Table 1: Summary of the predicted majority (p) and minority (n) carrier concentrations power law exponents and diffusion lengths` behavior, as a function of the studied excitation range, for the single level recombina- tion center model G regime 1 1 0.5 3 0.5 > 1 5 0.5 0.5 4 1 1 ~constant ~constant, 2 ↓ 1 ~constant, ↓ ↑ ~constant, 1 𝐿𝑝≫𝐿𝑛 𝐿𝑛≪𝐿𝑝 ~constant ↓ ↓ Table 1 summarizes the power law exponents and changes in the carrier diffusion lengths in each regime with increasing generation rate (for the derivations of the quantitative determina- 𝜸𝒑 𝑳𝒑 (or 𝝉𝒑) 𝐿𝑝≈𝐿𝑛 𝜸𝒏 𝑳𝒏(or 𝝉𝒏) 𝐿𝑝≈𝐿𝑛 we note that all up/down arrows apply to both 𝐿𝑝 and 𝜏𝑝, and the carrier mobility is presumed to be G-independent. tion of 𝛾𝑝and 𝛾𝑛, see section S2 in the SI). As can be seen from the table, several combinations of 𝛾𝑝and 𝛾𝑛 exponents are possible, depending on the G regime. tion of the majority carrier power law dependence, 𝛾𝑝, alone, from simple photoconductivity measurements for example, i.e., 𝜎𝑝ℎ∝𝐺𝜇𝑝𝜏𝑝∝𝐺𝛾𝑝 , as is commonly done for the HaP`s6,38,39 , tion path cannot be determined, because for 𝛾𝑝=0.5 for example, regimes 2, 3 and 5 are pos- sible, and without experimentally determining also 𝛾𝑛, in the same G range in which the 𝛾𝑝 was determined (by SSPG or EBIC under illumination for example), the relevant G regime cannot be does not allow unique determination of the relevant G regime. Hence, the dominant recombina- A very important conclusion can be drawn immediately from Table 1 - experimental determina- 13 jority and minority carrier power density on the generation rate are the same for these two re- gimes. However, in regime 1 most recombination centers would be empty of minority carriers determined uniquely. Regimes 1 and 4 are exceptions, as exponents 𝛾𝑝 and 𝛾𝑛 of both the ma- (electrons in the case we consider here) and therefore 𝐿𝑝≫𝐿𝑛, while in regime 4 the carrier to the fact that in this regime, 𝜏𝑝≅𝜏𝑛, as explained above. In reality the transitions between the different regimes are not abrupt, but continuous, leading to experimental values of 𝛾𝑝and 𝛾𝑛 (except in regime 3) that can be anywhere between 0.5 to 1. We note in passing that in prac- diffusion lengths should be roughly similar (up to the root-squared ratio of the mobilities), due tice, values lower than 0.5 are found for cases that cannot be described by the simplified single level model, considered here, as in cases where two or more types of recombination centers are active in the recombination process. III. Experimental results and discussion Having clarified the different recombination scenarios in our simple model, we turn now to our experimental results. We compare, in light of the trends shown in Figure 4 and Table I, our steady-state results with results that we obtained by pulse measurements on the same MAPI samples. In particular, we follow the observed dependences on the different G or Geq regimes in which each method is performed. We start by measuring the phototransport properties by means of SSPG and PC of two different types of MAPI samples (3 of each type) from two differ- ent laboratories, one being solution-processed MAPI22 (hereinafter termed simply as "MAPI"), and the other evaporated MAPI (e-MAPI), which is known to yield high-efficiency (vacuum- deposited) MAPI solar cells40. As can be seen from Figure 5a, for the solution-processed MAPI at generation rates in the range of 1020-1022 [1/cm3sec], the hole diffusion length decreases from ~1.5 to ~0.4 µm with increasing G, while the electron diffusion length remains fairly constant or slightly increases around 0.3-0.4 µm. Thus, comparing the results with the predictions of Figure 4, we conclude that these phototransport measurements were performed in regime 2, probably approaching regime 3 close to G~1022 [1/cm3sec]. In contrast, the dependence on G for the steady-state phototransport-derived diffusion lengths of the holes and electrons in the e-MAPI films (Figure 5a, red) behave the same way: both decrease with increasing G. This suggests that for the e-MAPI, the phototransport measurements were carried out in regime 5. If so, according 14 the diffusion in the two cases is due to the higher mobility of the holes (note that in Figure 4, we to Figure 4 and table 1, we may conclude that for the e-MAPI, 𝜏𝑝≅𝜏𝑛. The difference between assumed that µn= µp = 10 cm2/Vsec). The 𝐿ℎ≈3𝐿𝑒 result in Figure 5a suggests that for the e- MAPI case, µp = 9µn. Support for our conjecture that in the e-MAPI samples we probe the charge carrier dynamics in regime 5, comes from our TRPL measurements. As shown in Figure 5b, the TRPL response is ~10 times larger in the e-MAPI samples than in the MAPI samples and supports the conclusion, derived from the steady-state phototransport measurements (Figure 5a), that band-to-band radiative recombination is much more dominant for the e-MAPI sample than for the MAPI sample. Another interesting observation from the TRPL result is that the e-MAPI TRPL lifetime (~10 ns) is lower by a factor of about ~50 than that of the solution-processed MAPI film (~500 ns). In spite of the significant differences between the TRPL lifetimes of the two samples, from the photo- transport measurements we found that both types of films exhibit similar μτ products ([4-11]X 10-7 cm2/V), in agreement with what we already reported for the solution-processed MAPI films22. Thus, although in the literature there is an often implicit, common assumption that longer radiative lifetimes result in higher PV quality films and better PV conversion efficiencies 15,41–44, we do not find such direct correlation between measured radiative lifetimes and photo- transport properties. In view of these results we suggest that the reason is the very different nature of the two methods, phototransport vs. TRPL. First, photoluminescence efficiencies are generally low; therefore, they are representative of only a small fraction of the excited carriers. Second, while in transient TRPL measurement only the charge carriers, which undergo radiative band-to-band recombination, are probed, in phototransport measurements, these carriers are exactly the relatively fewer ones that do not contribute to the phototransport signal (or to the photocurrent in an operating solar cell under illumination)36. Therefore, the carrier lifetimes ex- tracted from a single TRPL measurement are less, if at all relevant, to the standard operating conditions of MAPI as a light absorber in a solar cell device. Moreover, if we assume that the decay time is indeed the relevant time scale for charge carriers in the bands, we will also have to assume that the mobilities of the evaporated e-MAPI films is significantly higher than those of the MAPI. We ruled out this possibility by performing TRMC measurements, as shown in Fig- ure S1 in the SI. 15 The differences in the Geq values for the TRPL measurements shown in Figure 5b for the MAPI (Geq = (1.6 X 1015 1/cm3) / 500 ns = 3.3 X 1021 1/cm3sec) and the e-MAPI sample (Geq = (1.6 X 1015 1/cm3) / 10ns = 1.7 X 1023 1/cm3sec) demonstrate also that the charge carrier dynamics for the e-MAPI is probed at excitation intensities that are very different for the steady-state measure- ments, such as SSPG and PC, and for TRPL, as suggested in Figure 2. Thus, if the probed quantity (lifetime/diffusion length) is not measured under 1-sun equivalent excitation intensity and where the measured quantities are extracted from results obtained by methods that do not de- pend on phototransport of the charge carriers, (e.g., by radiative decay), then combining two of the three measured quantities (lifetime/ mobility/ diffusion length), to derive the third, un- known parameter from it, can easily result in incorrect results. In such a case the burden of proof is on those that choose to use such a procedure. This problem may explain (some of) the large spread of derived 𝐿 values, that is shown in Figure 1. 16 Figure 5: typical (a) holes (filled squares) and electrons (hollow circles) diffusion lengths from SSPG and PC, as function of the generation rate, G, for solution-processed MAPI (black) and e-MAPI (red); (b) TRPL results, under 640 nm excitation and 770 nm detection, for MAPI (black) and e-MAPI (red); (c) holes (filled squares) and electrons (hollow circles) diffusion lengths for solution-processed MAPI (black) and e-MAPI (red) derived from TRMC measurements, as a function of Geq; (d) TRPL response under different pulse en- ergies for solution-processed MAPI. It is now clear that the charge carrier dynamics, i.e. the lifetime of the minority carriers, probed using TRPL, is not necessarily the one that should be used to properly derive the value of L that is relevant for a device working in steady-state; thus, it need not be an indicator for the photoe- lectronic quality of HaP films. At the same time, according to our expectation from Figure 2, the TRMC measurements can yield results under conditions closer to those of solar cell operation and, thus, should yield results that are similar to those from steady-state methods. Further- more, as Figure 5a suggests that for solution-processed MAPI at G~1022 1/cm3sec we approach regime 3, we set out to try and measure the carrier diffusion lengths beyond G~1022 1/cm3sec by TRMC to look for the transition to regimes 4 or 5, predicted in Figure 4. It is obvious that these regimes cannot be obtained by steady-state methods since the material will be structural- ly damaged or evaporate in the worst case8,11 and its electronic properties will drastically change12,13. TRMC results for MAPI and e-MAPI are shown in Figure 5c (for details regarding the ex- traction of the hole and electron diffusion lengths from the raw data, see section S3 in the SI and Refs.1,37). Under conditions equivalent to generation rates of 1020-1022 1/cm3sec, the trends arising from the TRMC results are in good agreement with the steady-state results (Figure 5a) for both types of samples. For both film types, the hole diffusion length decreases with increas- ing G, while, similar to the steady-state results, for the MAPI the electron diffusion length re- mains rather constant; for the e-MAPI, although the electron diffusion length decreases with light intensity. Thus, the TRMC results suggest that in this G range, we are in regime 2 for the MAPI, and regime 5 for the e-MAPI. This serves as a good demonstration to how TRMC meas- urements can agree well with steady-state measurements. Indeed, Semonin et al.23 have re- cently shown such an agreement for MAPI single crystals by comparing TRMC and SPCM results (although in that case the agreement was for a single value, rather than a trend with light inten- sity as we show here). However, although the trends in the phototransport measurements and the TRMC are similar, it can be seen that in our case, the diffusion length values obtained from 17 the TRMC measurements are roughly 5-10 times higher than those measured in steady-state. This discrepancy could arise from several factors such as: (1) the exact value of the mobility of electrons and the holes is not known. As a first or- der approximation they were assumed to be equal and the values, used for plotting Figure 5c, were taken as half the sum of the mobilities (see Figure S1 and section S3 of the SI). This approx- imation is questionable, as the phototransport results suggests that for the e-MAPI, µp = 9µn; (2) several inherent differences between the two methods. While SSPG measures photo- transport on a large length scale, i.e., across grain boundaries, TRMC is a local, non-contact method, operated under open circuit (compared to the short circuit conditions in the SSPG and PC measurements), and hence larger carrier lifetimes are expected where no charge extraction occurs. Furthermore, the TRMC the signal might be dominated by charge carrier dynamics with- in the bulk of small single crystallites, which resemble more the transport properties of single crystals rather than those of thin polycrystalline films. Hence, in view of reports on grain bound- ary effects in HaPs45–47, larger mobilities and diffusion lengths are obtained. If this interpretation is correct the TRMC measurements can reveal what is the "potential" quality of the film, e.g., if by a different film processing route less or more electronically benign grain boundaries were formed or eliminated. More importantly, in the TRMC results of the MAPI, when approaching Geq = 1022 1/cm3sec, the electron diffusion length increases from 1 μm to ~5 μm, becoming equal to the hole diffusion length, where n=p, and they then decrease together as Geq approaches 1023 1/cm3sec, due to the crossover to regime 5. Thus, in the TRMC measurements, thanks to the larger range of ac- cessible G values (4 orders of magnitudes compared to 2 in the phototransport measurements), not only regimes 2-3 are observed and agree well with the results obtained from the phototran- sport measurements, but all the regimes from regime 2 to regime 5, as shown in Figure 5c. are experimentally observed. (We further note here that in our analysis we neglect Auger recombi- nation, since it is not relevant in the Geq range studied here, as explained earlier in the text). For the e-MAPI, the TRMC results suggest that the crossover to regime 5 is roughly at Geq = 1020 1/cm3sec, 2 orders of magnitudes lower than that observed for the MAPI. The TRMC results are then in very good agreement with the model presented in Figure 4 in the previous section, sug- 18 gesting that the simple model, comprising a single level recombination center and bimolecular recombination, can describe well the recombination kinetics in MAPI and e-MAPI films. To fur- ther verify that for the solution-processed MAPI sample there is crossover from regime 3 to 4 at the Geq range of 1021-1022 1/cm3sec as the TRMC results suggest, we measured the TRPL re- sponse of the MAPI film for several excitation intensities within this Geq range. The results are shown in Figure 5d and the dependence on the TRPL decays, as a function of excitation intensi- ty, suggests that there is a change in the decay mechanism as the intensity is increased, switch- ing from monomolecular recombination at low intensities, to bi-molecular recombination, at higher intensities (1/t to e-1/t t-dependence). This suggests that the TRPL measurements probe a transition from regime 3 to regime 4 in our MAPI sample, which is in agreement with the TRMC results (we could not repeat the same exercise for the e-MAPI films, since reaching G values in the range of 1019-1020 1/cm3sec would require excitation pulses with extremely low photon dose, yielding TRPL signals well below the sensitivity of our experimental setup). Combining our steady-state and pulsed experimental results, we learn that the major dif- ference between the solution-processed MAPI and the e-MAPI samples is the range of G values in which the crossover between regimes 3 to 4 occurs, where 𝑛≈𝑝 (which we term hereinafter as Gco). This transition occurs at Gco ≈ 1022 1/cm3sec for the solution-processed MAPI sample, but for the e-MAPI sample this transition is observed at G ≈ 1020 1/cm3sec, suggesting that for e-MAPI, the concentration of recombination centers is much smaller than in the solution- processed MAPI samples. To illustrate the difference in Gco for the two types of samples, we performed simulations using the same parameters as in Figure 4, but changed the concentration of the recombination cen- ters, Nr in the range of 1011-1018 cm-3, and extracted Gco for each Nr. As expected, Gco increases with increasing Nr, as shown in Figure 6. 19 defects that serve as recombination centers in e-MAPI than in solution-processed MAPI. The ored circles correspond to the experimentally found GCO for the MAPI (black) and the e-MAPI (red). Figure 6: Calculated GCO values for different Nr values, GCO corresponds to the G in which 𝑛≅𝑝. The col- Therefore, we conclude that for solution-processed MAPI, Nr ≈ 1015 cm-3 (shown in black in Fig- ure 6), but for e-MAPI (red), Nr ≈ 1013 cm-3. This result implies a significantly lower density of question that arises next is, if indeed this is the case, why are the diffusion lengths (i.e., the 𝜇𝜏 reason for that the 𝜇𝜏 products of both films are similar, is a combination of: products) of both films similar, as shown in Figure 5a, because, from Figure 6 we would expect the diffusion lengths in the e-MAPI to be higher than those in the MAPI. We suggest that the On the one hand, a lower Nr should yield a larger 𝜇𝜏; -a- On the other hand, stronger PL yield under 1-sun conditions will result in more e-h pairs -b- undergoing radiative recombination, for the e-MAPI film (and, thus, will not contribute to pho- totransport, which is what is measured in the SSPG and PC) than in MAPI films. The reason is, as explained above, that band-to-band radiative recombination dominates in the e-MAPI, because, as shown in Figure 5a, and simulated in Figure 4, regime 5 is the relevant one for the e-MAPI films under 1 sun conditions, and in that regime >50% of the e-h pairs undergo radiative recom- bination, compared to < 5% for MAPI films36. 20 IV. Conclusions While there is a large spread of reported values of mobilities and diffusion lengths, using pulsed methods, especially for the MAPI, we find that this spread is not only due to the variability in sample quality and preparation conditions, but also to the interpretation of results that were obtained by different techniques that are used in the measurements. This is in particular due to the different excitation conditions, which vary between the various pulsed methods and can dif- fer greatly in terms of equivalent intensity (and generation rate) from the steady-state ones. The latter realization of the wide differences calls for an attempt to evaluate the information that is derived by the various techniques, which is frequently contradictory and thus not ame- nable for the determination of the phototransport parameters. A conspicuous example is the attempt to use information, obtained with high-power short-time excitation pulses to derive parameters relevant to steady-state operation that occurs at much lower excitation power. We therefore revisited pulsed excitations, taking into account the lifetime of the charge carriers and the generation rate equivalents of those to the steady-state excitation conditions. To do that we suggested a simple calibration for the comparison of the two types of excitations. To see then the benefits of this calibration we applied a simple model with a single recombination cen- ter, which is found to explain well the photophysical properties related to electronic charge transport in different HaP absorber materials. Using that model and mapping the pulse excita- tion intensity on the steady-state power scale, we compared between our experimental results, obtained by pulsed and steady-state excitation measurements on polycrystalline films, prepared in different laboratories via different preparation routes. We found a relatively good agreement between TRMC and steady-state measurements. However, we also found that depending on the studied HaP sample, 2nd order processes, such as bi-molecular radiative recombination, may be the dominant processes contributing to the observed signal in TRPL measurements, yet they are not necessarily relevant for the standard operating conditions of the HaP as absorbers in solar cell devices. We further suggest that experimental determination of the exact dominant recombination mechanism in HaP materials should include measurements of both the majority and minority carrier` phototransport properties and that these should be carried out under il- lumination conditions that are as close as possible to 1 sun, preferably with some intensity vari- 21 ation to allow the determination of the carrier generation regime at which the data were ob- tained. Acknowledgements We thank Dan Oron from the WIS for fruitful discussions. GH and DC thank the SolarERAnet program HESTPV, via the Israel ministry of Infrastructure, for partial support. At the Hebrew University this work was supported in part by the Harry de Jur Chair in Applied Science (O.M.) and the Enrique Berman Chair in Solar energy research (I.B.). 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1803.07831	1	1803	2018-03-21T10:16:14	3D-printed rotating spinnerets create membranes with a twist	[ "physics.app-ph" ]	Round hollow fiber membranes are long-established in applications such as gas separation, ultrafiltration and blood dialysis. Yet, it is well known that geometrical topologies can introduce secondary ow patterns counteracting mass transport limitations, stemming from diffusion resistances and fouling. We present a new systematic method- ology to fabricate novel membrane architectures. We use the freedom of design by 3D-printing spinnerets, having multiple bore channels of any geometry. First, such spinnerets are stationary to fabricate straight bore channels inside a monolithic membrane. Second, in an even more complex design, a new mechanical system enables rotating the spinneret. Such rotating multibore spinnerets enable (A) the preparation of twisted channels inside a porous monolithic membrane as well as (B) a helical twist of the outside geometry. The spun material systems comprise classical polymer solutions as well as metal-polymer slurries resulting in solid porous metallic monolithic membrane after thermal post-processing. It is known that twisted spiral-type bore channel geometries are potentially superior over straight channels with respect to mass and heat polarization phenomena, however their fabrication was cumber- some in the past. Now, the described methodology enables membrane fabrication to tailor the membrane geometry to the needs of the membrane process.	physics.app-ph	physics	Journal of Membrane Science 00 (2018) 1–32 Memb. Sci.logo J. Memb. Sci. 3D-printed rotating spinnerets create membranes with a twist Tobias Luelf1,2, Deniz Rall1,2, Tim Femmer1, Christian Bremer1, Matthias Wessling1,2 1 RWTH Aachen University, Chemical Process Engineering, Forckenbeckstrasse 51, 52074 Aachen, Germany 2 DWI - Interactive Materials Research, Forckenbeckstrasse 50, 52074 Aachen, Germany Abstract Round hollow fiber membranes are long-established in applications such as gas separation, ultrafiltration and blood dialysis. Yet, it is well known that geometrical topologies can introduce secondary flow patterns counteracting mass transport limitations, stemming from diffusion resistances and fouling. We present a new systematic method- ology to fabricate novel membrane architectures. We use the freedom of design by 3D-printing spinnerets, having multiple bore channels of any geometry. First, such spinnerets are stationary to fabricate straight bore channels inside a monolithic membrane. Second, in an even more complex design, a new mechanical system enables rotating the spinneret. Such rotating multibore spinnerets enable (A) the preparation of twisted channels inside a porous monolithic membrane as well as (B) a helical twist of the outside geometry. The spun material systems comprise classical polymer solutions as well as metal-polymer slurries resulting in solid porous metallic monolithic membrane after thermal post-processing. It is known that twisted spiral-type bore channel geometries are potentially superior over straight channels with respect to mass and heat polarization phenomena, however their fabrication was cumber- some in the past. Now, the described methodology enables membrane fabrication to tailor the membrane geometry to the needs of the membrane process. Keywords: Additive manufacturing, Spinneret design, Twisted hollow fiber membrane, Helical membrane, Multibore 1. Introduction In membrane filtration processes, round membranes in the shape of hollow fibers as well as flat sheets are well-established. Yet, the challenge remains to improve mass transfer at the membrane surface. In membrane processes with high permeation rates, the retained component accumulates at the membrane surface. If back diffusion or mixing is limited, the retained component builds up and an additional mass transfer resistance emerges and the 1 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 2 effective driving potential across the membrane is lowered. Additionally, in case of ultrafil- tration, retained components increase the viscosity. This also acts as an additional transport resistance and hence lowers the mass transfer. Finally the overall performance of the process decreases. Measures to counteract these concentration polarization and fouling phenomena are manyfold. One of them being the induction of secondary flows normal to the membrane surface back into the feed channel preventing the establishment of a concentration polariza- tion or fouling layer. These secondary flows emerge when the surface of a membrane causes the flowing feed to absorb a momentum, different then the main flow direction. It is highly desirable to have at hand a freedom of design for membrane extrusion processes through the tailored design of a spinneret. This would then result in the desired membrane geometry. In the scope of our publication we aim to overcome the previously described issues concern- ing mass transport resistance by varying the geometry of the hollow fiber membrane. This paper describes a methodology to freeform fabricate spinnerets with any channel geometry by additive manufacturing, or 3D printing, combined with a superimposed rotation of the spinneret and the fabrication of polymeric and sintered hollow fiber membranes. 2. Background 2.1. Membrane geometries Two membrane geometries are used in general: flat sheet and hollow fiber membranes. To enable membrane operation, the membrane needs to be implemented into a module to define flow conditions. For flat sheet membranes spiral-wound and stagged flat modules are most widely used. Both the feed and permeate channel are equipped with spacers. These spacers define the channel height and additionally act as mixing devices by periodical redirection of the flow field [1, 2]. Investigation and optimization of spacer geometry and orientation in spiral wound modules has been subject to many scientific publications, as reviewed by Schwinge et al. [3–12]. For hollow fiber or extruded orifice membrane geometries, only the membrane itself and its arrangements in a module without any spacer define the flow configuration. The hollow 2 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 3 fiber geometry simply has a round cross-section and a linear axial orientation. The small dimension of the fibers and the absence of spacers results in high specific surface areas as compared to flat membrane module types. The mixing of feed flow, showing concentration polarization, and the reduction of this in hollow fiber and tubular membranes is subject of scientific research since almost 20 years [13–20]. Especially, concentration polarization or deposition layers are predominant on the membrane surface in inside-out micro- and ultra- filtration. In contrast to the virgin membrane's hydraulic resistance, better lumen mixing offers significant performance improvement [21]. While in flat sheet membrane modules the flow channels are formed by two different membranes with spacers inserted during module fabrication, the situation is different in hollow fiber membranes. Here, the flow channel is not accessible after membrane formation. Further, the placement of passive mixing elements such as turbulence promotors is possible [22] however not feasible in small size hollow fiber geometries. For the purpose of increasing surface area, non-circular structured hollow fiber mem- branes with cross-sectional geometries other then round are described in [23] for outside structures and in [24] for inside structures. Outside structures can also have beneficial transport properties when twisted and used in aerated submerged filtration processes [25]. However, integrated mixing functionalities on the inside are not established well due to diffi- culties in fabrication. To address this fabrication challenge, recent developments utilize the shape of the membrane itself to induce secondary flow, mixing up the diffusion boundary layer. The flow field is designed to transport retained components back to the bulk flow and thus decrease concentration polarization. A method to fabricate circular curled hollow fibers [26] via the liquid rope coil effect has been presented by Luelf et al., as well as fab- rication of hollow fibers with axially sine-shaped but radially circular lumen channels [27]. Such passive mixing in single bore hollow fiber applications has been subject to different studies on mass transfer. Especially, spiral shaped structures are of interest due to their specific flow field. Moulin et al. investigated its potential application in ultrafiltration and found curled orientation of hollow fibers to potentially offer increased fluxes [28]. Further- more, computational fluid dynamics have been applied to show the mixing potential in spiral 3 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 4 shaped membrane channels [15, 16]. Pentair recently developed tubular membranes with increased mixing performance, called X-Flow Helix technology. The X-Flow tubular mem- branes were evaluated by Wiese et al. using NMR and filtration measurements [29]. Here, a small spiralling ridge or corrugation is directly introduced into the bore channel during membrane fabrication, improving mass transport significantly at turbulent flow conditions. 2.2. Spinneret design Hollow fiber membranes are produced via co-extrusion of a bore fluid and a polymer dope solution through a spinneret. Multilayer co-extruded hollow fibers are also known for different applications [30, 31]. Traditional manufacturing techniques for spinnerets produce round geometries of the main polymer outlet and the bore channel only. As dimensions of the spinnerets are in the range of the produced membrane geometry, sophisticated design of spinnerets would lead to excessive manufacturing costs. If additional heating channels have to be provided, limitations in manufacturing become predominant. In general, manufactur- ing limitations nowadays dictate the design of spinnerets. It would be highly desirable to become independent of current spinneret manufacturing processes and move towards quick, cheap and flexible design methods enabled by 3D-printing. Membranes with multiple bore channels are well known for monolithic ceramic mem- branes. Also hollow fiber membranes with multiple bore channels are available from GE or BASF Inge GmbH or, known as Multibore® membranes for ultrafiltration [32]. Researchers also employ this geometry experimenting with different channel amounts in a single fiber [33–37]. There have been attempts to improve the membrane geometries with multiple bore channels with regard to wall thickness distribution [34–36]. All of these studies approach spinneret design from a mainly qualitative perspective. However, manufacturing of these multi-channel spinnerets with traditional manufacturing techniques is complex and expen- sive. Hence, iterative geometry optimization of spinneret design without rapid prototyping technique is currently not feasible. Bonyadi and Mackley fabricated flat membranes with multiple bore channels, named micro-capillary film membranes and reported the effect of spinning conditions, such as take 4 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 5 up speed and air gap distance on the macroscopic membrane formation [38]. 2.3. Spiralling flow channels Spiralling channels are known to enhance mixing and transport limited processes [39]. So-called Dean vortices promote the mass transport [13, 15–18, 21]. In a curved flow ar- rangement, a moving element is affected both by inertia and centrifugal forces. The latter scales with rotational speed and radius. Thus, an element in the bulk flow is dragged in radial direction of curvature. Elements near the channel wall are slower due to no slip con- dition at the wall. The interplay of both finally result in a double vortex, also known as dean vortices, enabling additional mixing [15, 16, 39, 40]. The formation of dean vortices is commonly described in a mathematical manner using the Dean number. This dimensionless parameter scales the Reynolds number Re with the radius of curvature. with De = Re ·r di Dc = D"1 +(cid:18) b πD(cid:19)2# Dc (1) (2) Here Dc represents the diameter of curvature, corrected by the helical pitch b. The helical pitch determines the length of a 2 π twist. The tube internal diameter is denoted by di. [41] Transfer phenomena are often described by dimensionless power-law equations. The correlations for heat and mass transfer are similar due to equal mathematical descriptions of their fundamental principles. There are multiple experimental and theoretical studies on the flow and heat transfer in curved pipes. While the reproduction of all studies is beyond the scope of this paper, Vashisth et al. gave a detailed summary on their findings and the conditions under which they were derived [39]. The flow field was applied to reverse osmosis in a curved membrane duct in an early study by Srinivasan and Tien [42] in 1970. Here, potential reduction of concentration polarization in binary salt solutions was proven by a mathematical approach. Nunge and Adams [43] critically evaluated the studies of Srinivasan and Tien and found concentration polarization reduction that is less intense, but still significant. 5 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 6 Winzeler and Belfort [44] have prooven the existance of secondary vortices in combination with a flat sheet membrane in a spiral channel. They visualized the vortices both optical and by NMR imaging and measured five times increased flux for dairy whey filtration by presence of spiral channels. Liu et al. [41] investigated the mass transfer in curved hollow fiber membrane with different wind angles (pitches) and compared the results to straight fibers. They found significantly increased mass transfer coefficients up to 3.5 fold. Finally beeing expressed by mass transfer coefficients and Sherwood numbers. Equation 3 represents the Leveque solution for straight tubes. Shs = 1.62(cid:18) di L(cid:19)0.33 · Re0.33 · Sc0.33 (3) Liu et. al found correlations for the Sherwood number as a function of Dean number as expressed in Equation 4. Their findings show dependencies of higher power employing values of α up to 0.55 and a of 2.64 regarding fibers with a wind angle of 45 degree. Shc = a · Deα · Sc0.33 (4) As can be seen by the Dean number exponent, the curved structure offers higher transfer rates as compared to the straight channel alignment. Also Moulin et al. [17] found increased mass, expressed by improvement factors of 2 to 4 in water oxygenation. In our previous work we developed a manufacturing technique to produce hollow fibers based on rope coil spinning without the need of additional manufacturing steps [26]. While the production itself does not demand changes to existing spinning setups, the fiber geom- etry intrinsically limits the membrane surface area per module volume in closed module operations. A methodology for the fabrication of integrally twisted multibores does not exist. Here we present a procedure for rapid iterative spinneret improvement, exemplary shown for tri- bore spinnerets based on rapid prototyping. The method of 3D-printing spinnerets offers freedom of design in the cross section design of hollow fibers. In the second part of the 6 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 7 manuscript we investigate the combination of printed spinnerets and a rotational spinneret movement. Thereby, we create fibers with potential passive mixing properties and no limita- tion in packing density as compared to conventional hollow fibers. The presented method is evaluated by spinning of polymeric fibers. Based on our preliminary experience on synthesis of porous metallic fibers [45], we also apply the method to produce porous electrodes with previously mentioned properties. 3. Experimental 3.1. Spinning setup For hollow fiber production by NIPS (non-solvent induced phase separation), a state-of- the-art hollow fiber spinning line was used. The designed spinnerets were connected to the polymer solution and bore fluid lines via a rotating construction for the production of fibers with twisted bore channels. Figure 1 visualizes the position of the rotating construction in the spinning line. The rotating construction, described in Section 3.3 is located above the coagulation bath, filled with tap water. The fiber is spun through the spinneret, passes the air gap and undergoes phase separation in the coagulation bath. The fiber is held in place around a small guiding wheel and finally taken out of the bath by a pulling wheel. It is placed in additional water baths for solvent exchange for at least 48 hours. Due to the rotation and the newly designed spinneret, two new production parameters are associated as follows: • Spinneret geometry • Rotational speed of spinneret 7 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 8 Figure 1. Spinning setup: A) Bore fluid inlet, B) Polymer solution inlet, C) Spinneret outlet. 8 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 9 Figure 2. Cut view of rotating spinneret assembly. The bore fluid line is coloured in blue while the polymer solution is guided through the yellow parts. The stirrer motor is located between the cut lines and is not displayed in this view. A) Marks the inlet of bore fluid. B) Marks the inlet of the polymer solution. C) Marks the position of the 3D printed spinneret connected to the bore fluid and polymer solution lines. 9 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 10 Figure 3. Comparison of spinneret CAD drawings with printed versions. The left images of each pair are CAD renderings, while the right photographs are taken after printing of the spinnerets. Each spinneret body has a diameter of 25mm. A) Oval polymer solution opening with clearly visible step size of 100 µm in z-direction shown in the magnification, B) round tri-bore spinneret, C) three edged star shaped bore opening, D) five edged star shaped bore opening. 3.2. Rapid prototyping of spinnerets All spinnerets, except the ones for the production of flat tribore fibers were 3D-printed by means of stereolithography with Envisiontec Perfactory® 3 mini multi lens. EnvisionTEC e-shell 600 was selected as photo resin. The printing resolution in z-direction on was set to 100 µm to allow for sufficient accuracy. The x- and y-resolution was set to 60 µm. The printed slices are cured out of the shallow resin vat with 180mW/dm2 UV emission. The printing process itself operates at a speed of approximately 10mm per hour in z-direction. For post processing of parts printed with e-shell 600 clear EnvisionTEC GmbH states a 10 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 11 suitable method [46]. The parts are cleaned in 2-propanol for a few minutes to remove not polymerized material and afterwards dried at 37 ◦ C for 30min. Then the part requires to be post cured by the light curing unit Otofash G171 by NK-Optik GmbH with 2000 to 4000 flashes. Figure 3 and 5 show the opening region of a printed spinneret. The step size in z-direction is clearly visible on the top of the spinnerets, while the inner needle is still round and without edges in the horizontal plane. For the flat tribore fiber production spinnerets were printed with an OBJET Eden260V 3-Dimensional Printing System by Stratasys Ltd., producing parts via the polyjet printing principle. As materials both VeroClear and RGD525 were processed. Closed volume parts that are printed with RGD525 show an infill that is partly filled with support material. Outer shells of the parts are always printed homogeneous from RGD525. For the flat tribore fibers Stratasys VeroClear was used. Employing VeroClear and RGD525, a print can either be performed with support on the entire outer surface of the printed part, leaving a matte surface, or without outer support to result in a glossy surface. As NMP was used as a solvent for the polymer, all printed parts have been tested for solvent resistance. A detailed study of the swelling behavior and the solvent resistance can be found in the supplementary material. 3.3. Rotating construction In order to enable a rotational movement of the hollow fiber spinneret, a rotation of two fluids is necessary while the supply of these has to be realized at static positions. A rotating system as proposed by Femmer et al. [47] has been used. Figure 2 shows the rotating assembly used in the here presented work. Since the bore fluid has a lower viscosity, it is guided through the inner capillary of the assembly. It is inserted into the setup from the top (Figure 2 A). Rotation starts directly behind the first rotary coupling. The polymer solution is fed from the side opening (Figure 2 B) through the metal tubing. The wider tube diameter accounts for potentially high viscosities of polymer solutions. The polymer solution inlet stands still while the tubing above and below the adjacent rotary couplings are turning. In order to be able to connect standard spinnerets with separated inlets for 11 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 12 polymer solution and bore fluids, the bore fluid is guided out of the shell tube directly before entering the spinneret from the side. 3.4. Spinning of round rotating PES fibers A rotating spinneret was assembled into to a spinning line as illustrated in Figure 1. Spinning parameters were set as listed in Table 3. Polymer and bore flow rates have been kept constant as well as the fiber draw speed by the pulling wheel and the air gap. The rotational speed of the spinneret has been varied from 0 RPM, over 30 RPM, to 65 RPM for the tri-bore hollow fibers. The helical tri-bore hollow fibers have been spun at 0 RPM and 30 RPM. The polymer solution consists of polyethersulfone (PES) (BASF Ultrason 6020 P), NMP (1-Methyl-2-pyrrolidinone, 99%, extra pure, ACROS OrganicsT M ), polyvinylpyrrolidone (PVP K90, extra pure, CarlRoth), glycerol (purity ≤ 98%, Ph.Eur., anhydrous., Carl Roth). The bore fluid is a mixture of water and glycerol. Polymer solution and bore fluid were used as listed in Table 1. PES PVP NMP Glycerol Water [wt. %] [wt. %] [wt. %] [wt. %] [wt. %] Polymer Bore 15 - 5.25 - 75 - 4.75 93 - 7 Table 1. Solution compositions for rotating spinning of polymeric round tri-bore hollow fibers 3.5. Spinning of helical fibers In the next step, both static mixing properties on the outside of the membrane as pro- posed by Fritzmann et al. [1] and an integrally twisted multibore monolithic membrane are combined. A rotating spinneret assembly described in Section 3.3 is combined with a flat tri-bore spinneret as depicted in Figure 9. In the 3D printed spinneret, the polymer solution or suspension is fed through a tapered hollow space up until exiting the spinneret in the desired dimension of the annular gap. The annular gap of the polymer channel is rounded concentric to the bore channels with spikes between the needles to enable a good 12 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 13 distribution of polymer solution around and between the needles. In case of the bore fluid, the total volume flow is divided and fed to three openings of the spinneret, each providing equal volume flow for each needle bore outlet. Table 2 shows the composition of the spinning solution applied for the production of helical polynmer fibers. The applies spinning parameters are listed in Table 3. PES PVP NMP Glycerol Water [wt. %] [wt. %] [wt. %] [wt. %] [wt. %] Polymer Bore 16 - 8 - 76 - - 5 - 95 Table 2. Solution compositions for rotating spinning of polymeric helical tri-bore hollow fibers VP olymer VBore vP ull hAirGap [mL/min] [mL/min] [mm/s] [mm] tri-bore helical tri-bore 5.2 7.7 2.0 24 29.7 3.46 15 5 Table 3. Spinning parameters for spinning of polymeric tri-bore and helical tri bore fibers hollow fibers 3.6. Spinning of rotating titanium fibers Analog to the spinning of rotating PES fibers the dope solution for the titanium fibers is polymer based and adapted from the method of our previous work concerning the production of tubular macro-porous titanium membranes by David et al. [45]. 3.6.1. Production of green-fibers The dope solution consist of 7.5 wt.% Polyethersulfone (BASF Ultrason 6020 P, dried prior to use) as polymer binder, 22.5 wt.% NMP (1-Methyl-2-pyrrolidinone, 99%, extra pure, ACROS OrganicsTM), and 70 wt.% titanium powder with an average particle size of 15 µm (ASTM, Grade 2, 99.7% purity, purchased from TLS Technik GmbH & Co. (Germany)). The aqueous bore fluid was modified by adding 5 wt.% Glycerol (purity ≤ 98%, Ph.Eur., anhydrous., Carl Roth) as viscosity enhancer to the de-ionized water. Spinning parameters 13 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 14 were set as listed in Table 5. Polymer solution and bore fluid flow rates have been kept constant as well as the fiber draw speed by the pulling wheel and the air gap. PES Ti Glycerol NMP Water [wt. %] [wt. %] [wt. %] [wt. %] [wt. %] Polymer 7.5 Bore - 70 - - 5 22.5 - - 95 Table 4. Slurry composition for spinning of PES/Titanium based green-fibers VP olymer VBore vP ull hAirGap [ml/min] [ml/min] [mm/s] [mm] 5.2 16 2.83 5 Table 5. Spinning parameters for PES/titanium based green-fibers 3.6.2. Thermal post-processing of green-fibers PES/titanium green-fibers were processed in an additional thermal treatment in order to obtain a solid porous metallic monolithic fiber. The spun PES/titanium green-fibers were sintered in a tubular furnace (Carbolite STF 16/610) under argon atmosphere. Figure 4 shows the applied temperature profile, proposed by David et al. [45]. The argon atmosphere was applied by a sweep flow of 7.5 mL/min, maintaining a steady supply of argon in order to not cause temperature gradients in the tubular furnace. During the first plateau the polymer binder (here PES) of the green-fiber is combusted. Reaching the second plateau the titanium powder forms sinter connections and builds a solid porous matrix. The heating rate during the heating process towards both plateaus is held constant at 5 ◦C/min. Higher heating rates cause production disruptions and lead to an inhomogeneous outcome in terms of shape conservation. Depletion of the polymer binder, and during the progression of the sintering process the fiber volume is subject to shrinkage. Depending on the temperature and sinter time, the porosity of the obtained fibers varies according to the research by David et al [45]. Here we have shown that higher sinter temperatures and longer sinter times lead 14 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 15 to depletion of free and hidden porosity [45]. Figure 4. Temperature profile of the thermal post-processing step for PES/Titanium based green-fibers. A two plateau method is applied with defined heating rates of 5◦C/min. The temperature is held constant for 60 min at 600 ◦C for the polymer binder combustion step and at 1100 ◦C for the sintering step. 3.7. Optical analysis Photographs have been taken with a Nikon D7100 Digital Single Lens Reflex (DSLR) camera equipped with a 17-105 mm lens. Makro images of fibers (Figure 6) have been taken 15 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 16 with a custom made microscope setup with a CMOS uEyeTM LE USB 2.0 camera from iDS and a Micro Nikkor 55 mm f/2.8 Nikon lens which is mounted in retro mode. FeSEM images have been taken with Field Immission Elektron Mikroscope Hitachi S- 4800. SEM images have been taken with Hitachi Table Top TM3030 plus. The acceleration voltage has been set to 15kV. µ − CT images have been taken with a Bruker, SkyScan 1272 device by Bruker. 4. Results 4.1. Prototyping spinnerets with 3D-printing As 3D-printing presents a higher degree of freedom as compared to traditional manufac- turing techniques during the design process, the shape of the spinnerets was varied from the standard, concentric round, shape. In conventional spinnerets the polymer solution enters the spinneret from the top and is distributed concentrically around the needle through mul- tiple drillings. Employing our prototype spinnerets, the bore fluid needle is connected to the outer body at one quarter, leaving three quarters of spinneret for distribution of the polymer solution. To ensure an equal distribution of polymer solution at the outlet, the polymer flow channel was narrowed directly at the opening (see Figure 5). Inner surfaces of 3D printed spinnerets comprise a higher roughness as compared to polished metal spinnerets. This is more pronounced for the spinnerets based on polyjet printing than for the stereolithogra- phy based spinnerets. On the outer surface on the other hand, this is not found for the stereolithography based parts and the glossy polyjet parts. A comparison of designed and printed spinnerets with different outlet geometries is dis- played in Figure 3. Rendering of the designed geometry is displayed for each pair on the left side in an isometric view, photographs of the printed versions are displayed on the right. No significant deviations from the intended geometry, especially at the outlet are visible. The choice of 3D-printing over conventional manufacturing techniques provides an increased freedom of design, especially concerning the spinneret outlet, where the fiber geometry is 16 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 17 defined during the spinning process. Variations in bore fluid channel geometry and channel numbers as well as polymer solution channel geometry are possible to be obtained without increase in fabrication effort. Figure 5. Close-up of the outlet region of a 3D-printed spinneret cut in half. Bore fluid and polymer solution channel maintained its structure during printing. The inner channels show a higher roughness than machined spinnerets. 4.2. Designing tri-bore spinnerets - Influence of needle size The potential for iterative spinneret improvement is exemplary shown for the influence of needle size using a tri-bore spinneret. The effect was evaluated by designing two spinnerets, one with a flat bore outlet surface, but slitted polymer paths towards the center of the spinneret and the other with extruded bore needles and (Figure 6 A). 17 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 18 Figure 6. Influence of the needle size on fiber channel integrity. A) CAD rendering of the spinneret without extruded needles; B) CAD rendering of the spinneret with extruded needles; C) Photograph of a fiber cross- section spun with a spinneret without extruded needles (A); D) Photograph of a fiber cross-section spun with a spinneret with extruded needles. We observed a more pronounced three-channel cross-section for the extruded needle geometry, as shown in Figure 6 D. Employing the flat bore opening the three bore channels are connected to form one channel inside the spun hollow fiber as depicted in Figure 6 C. The extruded bore needles (Figure 6 B provide a stable flow channel for the polymer dope solution in-between the bore channels of the spinneret. Therefore, this approach avoids blockage of the dope fluid's pathways to the center as occurring utilizing the flat openings 18 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 19 (Figure 6A, C). Thus extruded bore needles tend to be more robust against interconnection of bore streams as polymer solution is guided also between the needles. In contrast, utilizing the flat bore openings there is no pathway for the polymer solution to enter the space between the bore openings again, as reported also by Wang [35] for the distance of the channels. It was found that hollow geometries at the spinneret outer surface with thin wall thicknesses of below 0.8 mm are not feasible to be printed with support material that demands subsequent cleaning steps, as mechanical stress easily leads to material failure in this regions. 4.3. Influence of rotation on tri-bore fiber morphology Figure 7 depicts µ − CT imaging, of the fiber structure. Figure 7 A shows the fiber ma- terial of a short sample detected by µ − CT imaging. One can clearly see the cross-section In Figure 7 B and C the and the three channels, that are rotating around one another. lumen free volume is coloured in blue to visualize the flow channels. Figure7 C is taken from a long fiber sample, revealing more information of the whole fiber with potential produc- tion instabilities. This µ − CT measurements also reveal, that certain chaotic distortions lead to radial channel interconnection (C). We account the characterization of hollow fiber membranes via µ − CT superior over FeSEM imaging in terms of integral fiber properties. Utilizing this techniques in material studies could lead to a better understanding of hollow fiber properties in the future. Figure 8 shows the cross-section of three tri-bore fibers spun with variation in rotational speed. Figure 8 Ashows a fiber, that was spun with no rotation, whereas Figure 8 B and 8 C represent fibers spun with 30 RPM and 65 RPM respectively. 19 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 20 Figure 7. µ-CT imaging of rotating multibore hollow fibers spun with 30 RPM rotation of the spinneret. A) Cross-section of a short sample, B) Cross-section of a short sample with colored free volume, C) Colored free volume of a long sample. For all samples a clear tri-bore structure is visible without channel interconnections. Macrovoids are located between the lumen channels towards the outside of the fiber. Further, finger like macrovoids are located near the fiber outer region. The inner and outer separation layers are not penetrated by the voids. Fibers spun with 30 RPM (Figure8 B) show a 20 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 21 morphology, comparable with the fibers spun without rotation. Slight deformation of the lumen structure is visible for the sample spun with 65 RPM (Figure8 B), as one would expect for a rotating co-extrusion due to shear stress at the spinneret opening. The outside diameter of the rotating and non-rotating tri-bore fibers show no significant difference and in the final fibers rotational pitches were evaluated to be 23.3 mm for the fibers spun with 65 RPM, being in good agreement with the theoretical value of 27.5 mm. If one applies laminar flows to these fibers with Reynolds numbers of Re = 200, Dean numbers of De200,30RP M = 71 and De200,65RP M = 89 are calculated. Figure 8. Cross-sectional FeSEM images of tri-bore fibers spun under rotating conditions. Fibers are spun with 0 RPM, 30 RPM and 65 RPM, respectively. The background was adapted (blackened) for better visibility of the inner fiber channels. Original FeSEM Images of the fibers can be found in the supplementary material. 4.4. Helical tri-bore hollow fibers (PES- and titanum-based) The resulting helical tri-bore hollow fibers are displayed in Figure 10 and Figure 11 for classical polymer solution based PES fibers and metal-polymer slurries based fibers resulting in solid metallic monolithic membrane after thermal post-processing, respectively. 21 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 22 Figure 9. Multibore spinneret for helical and flat tri-bore fibers. Comparison of A) CAD rendering of the spinneret and B) Photograph taken after printing of the spinneret. 4.4.1. PES based helical multibore fibers The classical polymer solution based PES multibore fibers were spun with 0 RPM to form flat tri-bore fibers and with 30 RPM to form helical tri-bore hollow fibers. Figure 10 A shows a comparison of both geometries. Figure 10 B shows the cross-section (spun with 0 RPM), presenting a similar macro-void distribution as polymeric tri-bore hollow fibers (compare Figure 8). A dense skin formation can be observed on the lumen side and the outer surface. Gradual pore size increase from the skin towards the polymer matrix is due to different solvent exchange rates. When exposed to the non-solvent, the phase inversion process takes place rapidly but becomes more and more hindered due to diffusion boundaries. The inner bore channels evolve with equal size with slight deformation. The arrangement of bore needles in the spinneret promote the formation of stabilizing grooves on the outer side of the fiber. This effect is enhanced when rotation is applied. The formed grooves show resemblance to buckling effects of polymer layers on soft substrate [48]. The rotational 22 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 23 pitches were evaluated to be 6.50 mm with the spinning parameters applied (Table 3). Figure 10 C shows a uniform pitch along the whole fiber. The theoretical pitch was calculated to pitchth = 6.90 mm and shows good agreement with the actual value. Figure 10. Helical tri-bore fibers PES based: A) Comparison of sample spun with 30 RPM (left) and sample spun with 0 RPM (right) B) Cross-section of sample spun with 0 RPM. The picture is composed of two seperate images with the same magnification to capture the whole cross-section. C) Side view of the sample spun with 30 RPM showing a uniform pitch along the whole fiber length. 4.4.2. Metal based helical multibore fibers The metal-polymer slurries based fibers resulting in solid metallic monolithic membranes were spun with 0 RPM to form flat tri-bore fibers and with 30 RPM to form helical tri-bore 23 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 24 hollow fibers. Figure 11 A shows a comparison of both geometries in the green form and after thermal post processing. The stable helical and flat geometry maintained its shape after extrusion and after consecutive thermal post-processing. The green-fiber is subjected to shrinkage during the thermal post-processing step. Shrinkage occurs due to combustion of the binding polymer of the green-fiber as well as the progressing sinter stage. The difference in structure can be observed in the SEM image of Figure 11 B showing the cross-section of the green-fiber (bottom) and fiber after thermal post-processing (top). Corresponding larger magnification depicted in Figure 11 C shows the titanium particles embedded between the PES polymer binder and in Figure 11 D the fiber after thermal post-processing with clearly visible sintered particles without polymer binder which form a solid porous titanium matrix. The rotational pitches of the fibers were evaluated to be 6.50 mm for the green-fiber with the spinning parameters applied (Table 5). A uniform pitch along the whole fiber can be observed after extrusion as shown in Figure 11 A. The form of the pitch is maintained after the thermal post-processing step, and reduced due to shrinkage to 6.30 mm. The theoretical pitch was calculated to pitchth = 5.65 mm. Comparing the spinning parameters and the pitch developed, we experienced that the spinning system is very sensitive towards small changes in parameters and material systems. The curved geometry allow for the calculation of Dean numbers. If one applies flow inside the channels with Reynolds numbers of Re = 200, the Dean numbers were calculated to De200,30RP M = 105 and De200,30RP M = 199.9 for the PES based and sintered fibers respectively. 24 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 25 Figure 11. Helical tri-bore fibers titanium-based: A) Comparison of green-fibers and fibers after thermal post-processing spun at 0 RPM and 30 RPM, respectively. B) SEM image of the cross-section of the green- fiber (bottom) and fiber after thermal post-processing (top) C) Magnified image of the green-fiber showing the Titanium particles with polymer binder D) Magnified image of the fiber after thermal post-processing with clearly visible sintered particles without polymer binder. 25 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 26 4.5. Channel integrity Figure 12 shows the influences of spinning process parameters on the key geometric prop- erties of the helical multibore fiber. Typical machine parameters, such as volume flows, air gap distance and pulling speed act on the channel dimensions as in hollow fiber production with simple bore. The key differences are to be found in the channel integrity and being influenced by multiple parameters. In this regard a core aspect figured during the conduc- tion of the here presented experiments is the interplay of phase separation, viscosities, and spinneret design. All aspects are influencing the channel integrity, which is the stability of fiber design during fabrication. If, for instance, the flow of bore fluid is not constant in all channels of the spinneret, bore channels with different diameters evolve. Additionally, multiple bore channels tend to combine to one channel if the geometry is not stabilized. The stability can be generated by two means. First, fast phase separation already takes place in the air-gap region, which is also coupled to the risk of blocking of the spinneret causing fiber rupture. Secondly, an enhancement of the bore fluid's viscosity hinders mobility of the polymer solution - bore liquid interfaces. Furthermore, the spinneret design is a key aspect to stabilize multiple channel geometries, as explained in Section 4.2. Besides the amount of round channels, the spinneret design also enables the formation of structured channels, as investigated by C¸ ulfaz [24]. Nevertheless, our approach offers a more flexible route to geometry development compared to the form-defining spinneret parts being produced employing laser ablation. A combination with the rotational fiber production approach would finally offer a way to not only increase specific surface area of lumen channels but also go beyond an alignment that is parallel to the main direction of flow, thus offering flow disturbance. 26 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 27 Figure 12. Spinning related influences on the fiber structure during rotating spinning. 5. Conclusion In this manuscript we present a hands-on toolbox for spinneret and hollow fiber mem- brane development. We show 3D printing applications in spinneret design and construction for different available printing materials as well as a validation of stability against NMP as a typical solvent in phase inversion membrane formation. Examples of iterative spinneret 27 T. Luelf et al. / Journal of Membrane Science 00 (2018) 1–32 28 optimization with a variation of fiber geometry are presented for polymeric fibers. The produced multibore fibers have a stable 3D geometry with separated lumen channels. In addition we take the concept of spinneret design to another level by combining the typically implemented co-extrusion with the design of a rotation assembly. The resulting fibers com- bine a multibore approach with high packing density with a fiber lumen rotation enabling dean vortice formation during operation. Subsequently, we applied the rotating spinning method to titanium loaded polymer solutions. The phase separated green-fibers preserve the spiralling multibore structure during thermal post processing. This enables the develop- ment and production of complex 3D structured metal fibers for electrochemical membrane processes. With this approach we are able to fabricate fibers with rotating inner or outer geometries. 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1907.05329	1	1907	2019-07-11T16:05:48	Segmented ion-trap fabrication using high precision stacked wafers	[ "physics.app-ph", "physics.atom-ph", "quant-ph" ]	We describe the use of laser-enhanced etching of fused silica in order to build multi-layer ion traps. This technique offers high precision of both machining and alignment of adjacent wafers. As examples of designs taking advantage of this possibility, we describe traps for realizing two key elements of scaling trapped ion systems. The first is a trap for a cavity-QED interface between single ions and photons, in which the fabrication allows shapes that provide good electro-static shielding of the ion from charge build-up on the mirror surfaces. The second incorporates two X-junctions allowing two-dimensional shuttling of ions. Here we are able to investigate designs which explore a trade-off between pseudo-potential barriers and confinement at the junction center. In both cases we illustrate the design constraints arising from the fabrication.	physics.app-ph	physics	Segmented ion-trap fabrication using high precision stacked wafers Simon Ragg,∗ Chiara Decaroli,∗ Thomas Lutz, and Jonathan P. Home Trapped Ion Quantum Information Group, Institute for Quantum Electronic, ETH Zurich, 8093 Zurich, Switzerland (Dated: July 12, 2019) We describe the use of laser-enhanced etching of fused silica in order to build multi-layer ion traps. This technique offers high precision of both machining and alignment of adjacent wafers. As examples of designs taking advantage of this possibility, we describe traps for realizing two key elements of scaling trapped ion systems. The first is a trap for a cavity-QED interface between single ions and photons, in which the fabrication allows shapes that provide good electro-static shielding of the ion from charge build-up on the mirror surfaces. The second incorporates two X-junctions allowing two-dimensional shuttling of ions. Here we are able to investigate designs which explore a trade-off between pseudo-potential barriers and confinement at the junction center. In both cases we illustrate the design constraints arising from the fabrication. I. INTRODUCTION Atomic ions trapped in radio frequency traps cooled and controlled by laser light provide an experimental plat- form which is extremely well isolated from environmen- tal effects. As a result, this setting is among the lead- ing candidates for quantum computing [1 -- 5] as well as playing an important role in precision measurements and frequency standards [6 -- 8]. In both areas extending the current levels of control to larger numbers of ions is im- portant. This is obvious for a quantum computer, which will rely on manipulating a large number of qubits. For atomic clocks an increase in the number of ions under control would provide improved signal-to-noise ratio [9], while including techniques known from quantum com- puting could further enhance this through the use of en- tanglement [10]. One challenge of putting together systems with more ions is the realization of suitable trap structures which can be easily and repeatably fabricated. These must meet a number of requirements, including having pre- cise and uniform structures, allowing good optical ac- cess, and being able to withstand the high voltages and resulting electric fields (including radio-frequency fields) which are commonly used. As these systems become more extensive, the alignment of the electrode structures becomes increasingly important [11]. In quantum com- puting, particular challenges arise for trap development in the context of the "Quantum CCD" architecture, in which ions are dynamically shuttled through multiple connected zones of a trap array during the execution of algorithms [12, 13]. For scaling it may also be necessary to interface the ion with photonic connections between re- mote modules. Two elements which are integral to these approaches are junction regions which can guide ions in two dimensions, and single-ion/single-photon interfaces. ∗ Contributed equally. In the long term scaling may also require the integration of a variety of components into the trap structure, such as optics for light delivery and collection [14, 15]. A number of approaches have been taken previously in an attempt to realize suitable traps using techniques which can potentially be scaled to larger systems while main- taining precision. Common requirements are that elec- trode structures of a few 100 micron size can be realized, while retaining a precision of the electrode boundaries at close to 1 micron. One important area of research involves traps which are produced by lithography [16 -- 18], which allows the production of monolithic structures which are very precisely defined (at the level of a few 10s of nanometers). However it is difficult in many of these processes to fabricate multi-layer stacks to thick- nesses of more than a few tens of microns [19]. The heat- ing of ions near conducting surfaces decreases rapidly with distance, thus ion-electrode distances used for ex- periments have all been > 30 µm, which is greater than the lithographic thickness. Because of this most litho- graphic traps have been surface-electrode traps, in which the ions are trapped above a single plane of electrodes, providing a strong asymmetry in the out-of-plane poten- tial. This configuration results in a sacrifice of trap depth and curvature for fixed ion-electrode distance and volt- age compared to more symmetric electrode designs. This makes tasks such as shuttling through two-dimensional junctions more challenging [13, 20]. Micro-fabricated ion traps with heights of 100 micron or more have been produced using either stacks of wafers which are aligned manually [21, 22], or in a monolithic fashion using silicon fabrication techniques developed for Micro-Electrical-Mechanical-Systems (MEMS) [23, 24]. Wafer stacking techniques have generally relied on com- binations of optical monitoring and manual alignment, which is limited to tens of microns. Several experiments using stacked laser-machined alumina wafers have re- ported suspected misalignment as a cause of undesirable intrinsic micromotion [25, 26]. This reduces the interac- tion strength between an ion and a single-frequency laser 9 1 0 2 l u J 1 1 ] h p - p p a . s c i s y h p [ 1 v 9 2 3 5 0 . 7 0 9 1 : v i X r a beam, thus impeding control, and gives rise to an impor- tant systematic shift in frequency standards [27]. The monolithic approach potentially overcomes this problem [23, 24], but these traps have not become reliably avail- able to experimentalists and thus are relatively unex- plored. In this article, we describe the use of laser-enhanced etch- ing to construct precisely machined 3-dimensional ion traps based on stacked fused silica wafers. We use the precision and flexibility of this manufacturing method to design self aligning stackable structures, detail the capa- bilities and constraints of this approach, and give guid- ance in designing traps. We present two trap designs for quantum computing experiments which take advantage of these methods. The first is a segmented linear trap for which the electrode structures are designed to provide a high level of electro-static shielding of the ion from po- tential charge build up on an externally mounted optical cavity. The second is a segmented trap featuring two junctions, which should allow flexible re-configuration of arrays of ions. We give the results of testing the wafer alignment, as well as detailing the full fabrication chain that we have developed. II. FEMTOSECOND LASER-ENHANCED ETCHING Femtosecond laser-enhanced etching consists of exposing a glass substrate to femtosecond laser light followed by wet-etching with a dilute hydrofluoric acid solution [28]. It has been observed that silica exposed to femtosecond laser light has a significantly faster etching rate compared to not exposed silica [28, 29]. This is believed to be due to the creation of an internal stress field and a change in the chemical structure of the silica [30]. Due to the non- linear nature of femtosecond laser interaction with silica, enhancement of the etching rate occurs only in a small ellipsoidal volume in the focus of the beam referred to as the Laser Activated Zone (LAZ) [31], shown in Figure 1. Thus, the full volume to be etched needs to be written into the substrate by the laser. It has also been observed that in volumes with multiple laser exposures the etch- ing rate is even higher than in domains that have been exposed only once [30]. In recent years several experiments and applications have demonstrated the strength of this technology. Appli- cations include laser written optical waveguides [31 -- 35], creation of high aspect ratio micro-fluidic channels [30, 31, 36], flextures [36], MEMS [37] and ion traps [38 -- 40]. We are currently aware of two companies offer- ing a customizable femtosecond laser machining service: Translume [41] in the United States, and FEMTOprint [42, 43] in Switzerland. The work below has been carried out with devices fabricated by the latter. 2 FIG. 1: Shape and arrangement of the volume modified by single laser pulses [31], which is known as Laser Affected Zone (LAZ). A. Capabilities of the machining process In the following sections we will discuss the strengths and main limitations of femtosecond laser machining of silica with regard to ion trap fabrication. We focus on the achievable tolerances stated by FEMTOprint and give an overview of our own experiences with test devices designed while working with FEMTOprint's team. We focus on the machining precision, the achievable aspect- ratio of 3-dimensional structures such as grooves and cuts and the ability to create small yet precisely defined 3- dimensional geometries. As a result of the shape of the LAZ, the specified pro- cess precision of femtosecond laser-enhanced etching is ± 2 µm in the direction of propagation of the laser beam (hereafter these will be referred to as horizontal surfaces, with the laser beam assumed to propagate vertically) and ± 1 µm [42] orthogonal to it (these surfaces we refer to as vertical). On our test samples we have observed that these values represent a "best case scenario", which can be achieved in localized regions. In larger structures and over full wafers we observe machining tolerances on the 10 micron level. LAZxyzlaserbeamsilicasubstratea.) b.) 20 µm horizontal vertical 3 protrusion c.) before polishing after polishing d.) undesired grooves FIG. 2: a.) SEM image of a silica sample with segmented electrodes separated by tapered gaps. The horizontal surface features the characteristic surface structure of femtosecond laser machining while the vertical side walls have less roughness. The inset shows the surface profile along the horizontal surface. b.) Test junction trap with small free standing 3D structure as well as angled surfaces and small electrodes. The inset shows a common defect, a dent on a sharp corner, which may be due to high stress in these small areas during etching. c.) On the left: a sample of a machined surface. On the right: the same surface after laser polishing. Both SEM images have been taken with the same settings. The inset compares the surface profiles of machined surfaces before (blue) and after (red) polishing. d.) Defects (deep machining grooves) on a machined, horizontal surface. Large amount of material have been removed through intense laser exposure. The grooves are in the order of 10 µm wide and deep. The aspect ratio we tested for cuts and grooves was up to 1:50, which is sufficient for our applications, although the manufacturer quotes an achievable aspect ratio of up to 1:500 [42]. Our test samples have shown that cuts feature very regular and sharp edges (Figure 2 a.)). From SEM images we estimate the radii of curvature of the edges to be less than 100 nm. We also observe that the femtosecond laser enhanced etching is capable of forming 3D shapes with sizes as small as 10 µm including freely protruding structures such as those shown in 2 b.). The laser-enhanced etching process is automized [42], which in our experience results in short turnaround times on the order of a few weeks and thus provides the possibility for relatively fast prototyping. B. Limitations of the machining process While the versality of the laser-enhanced etching process is attractive, it is important to consider a number of fac- tors which lead to imperfections. The first is that due to the shape of the LAZ and the nature of volume sam- pling the surface quality differs on horizontal and verti- cal surfaces. Panel a.) of Figure 2 shows the top side of a sampled volume (surfaces perpendicular to the laser beam), for which the etching leads to a characteristic sur- face roughness on the order of hundreds of nanometers. Also shown are the sides where the surface roughness is only on the order of a few tens of nanometers. Surfaces 02040x[µm]−0.250.000.25z[µm]0255075100x[µm]−0.250.000.25z[µm]with high roughness can be smoothened using an addi- tional polishing step in which the femtosecond laser is re-used to melt the surface of the machined structure. Due to surface tension the surface becomes very smooth with micro roughness on the order 1 nm and a flatness that is still on the order of 10 - 100 nm. The result of polishing is shown in panel c.) of Figure 2. However, be- sides the desired smoothing of surfaces, structures such as edges and steps are also softened by this thermal pol- ishing step. A second challenge arises when large quantities of sub- strate material are removed. During intense laser irradia- tion local heating can occur in the silica, which can lead to a slight bending or expansion of the sample during laser writing. As a consequence the overall process qual- ity and precision is reduced. The removal of large quan- tities of material can also create stress in the sample. We have observed that this can result in small defects with sizes on the order of 10 to 20 µm. When working with 125 µm thick wafers we observed regular grooves on horizontal surfaces after etching, which did not oc- cur with thicker wafers of similar material. Defects as well as grooves are especially likely to occur at positions where a large fraction of the surrounding material has been removed. Examples thereof from our junction trap are shown in Figure 2 b.) and d.) and the inset of 2 b.). If these defects can not be tolerated, they limit the process yield since the occurrence is unpredictable. The removal of large quantities of material also requires a long laser irradiation step, which increases the process cost. III. MULTI-LAYER TRAP DESIGN CONCEPT We use the femtosecond laser-enhanced etching to de- velop ion trap wafers that offer simple and high preci- sion wafer-to-wafer alignment. Our alignment strategy utilizes the precision machining to realize a three point support mechanism with the relevant alignment features directly machined into the individual wafers. These then self-align when placed on top of each other. In the fol- lowing we describe this alignment scheme and establish general guidelines for the design of similar traps. 4 10 µm (cid:46) 2 µm mismatch a.) b.) c.) top wafer wafers parallel to less than 0.05 deg bottom wafer 200 µm FIG. 3: a.) Cross-section through a stack of three wafers with integrated alignment. b.) Measurement of the horizontal alignment precision of two electrode wafers in a wafer stack with integrated alignment. The stack is imaged from the top, the mismatch is found to be less than 2 µm, limited by the depth of view and precision of mechanical parts of the microscope. c.) Stacked trap wafers imaged from the side with a microscope. The distance between the two wafers is within 2 micron on all 4 corners of the stack. A. Alignment strategy Our alignment scheme is based on a three point sup- port mechanism, which mechanically defines the relative orientation of neighbouring wafers. In the two traps de- scribed below, we have used a stack of three wafers, with the middle wafer defining the three support points for the other two. Any of these wafers might be used for electrodes. In our assembly process the wafers are placed together with a small amount of clamping force, and then glued in place. The design of the alignment points is illustrated in the cross-section sketch in 3 a.). We found that the align- ment points on the middle wafer work well if they are half circles with 45◦ chamfer on the top and bottom side each half way through the wafer. A first approach with fully integrated alignment features failed due to poor precision and low surface quality (see appendix A). The respective counterpart for the alignment on the outer wafers is an indentation (see Figure 4 a.)). The walls of the indentation are vertical and make a right angle with the top surface of the wafer. The size (and shape) of the verticalalignmenthorizontalalignmentalignmentwaferelectrodewaferelectrodewaferinset is designed such that electrode and alignment wafers only touch each other at the alignment points. With the high precision attained by the machining, we achieve stable and precise alignment of the three wafers. Figure 3 b.) shows a measurement of the relative align- ment of two wafers which are separated by an interme- diate spacer in the manner described. The measurement is carried out using an optical microscope equipped with a CCD-camera. First the microscope is focused on an electrode of the bottom wafer of the wafer-stack and a picture is taken. Next, the microscope is focused on the same electrode on the top wafer and another picture is taken. Then the two pictures are overlapped pixel by pixel (both with increased contrast and one with inverted colors to obtain bright areas appearing dark). From the known pixel size and microscope magnification we can estimate the misalignment between the wafers. The measurement is limited by the depth of view and pre- cision of mechanical parts of the microscope that could shift the images during refocusing. Nevertheless it al- lows us to constrain the relative alignment imprecision to < 2 µm. The stated alignment precision is for wafers of dimension of 20×20 mm. Similar measurement results were obtained at different points distributed over the full trap. A measurement of the vertical alignment is shown in panel c.) of Figure 3. We have observed that verti- cally the angle between the wafers is less than 0.05 deg while the separation relies on the thickness tolerance of the substrates. This typically lies between ± 5 µm and ± 20 µm. By measuring the thickness of the alignment wafer prior to fabrication, the alignment feature on the electrode wafers could be adjusted to compensate for thickness deviation and thus the vertical alignment of the wafers could be improved if desired. Within individual wafers, we have measured a homogeneous flatness over the full area of 20 × 20 mm within uncertainty (±5 µm) of the instrument. Even when wafer flatness varies by a few microns over the whole area, placing the alignment points far from each other ensures only a small variance in the angle between electrodes on each wafer. B. Wafer and electrode design One possible wafer design is illustrated in Figure 4 a.) and b.). For this design the trap is positioned in the center of the wafers between the three alignment points. The middle wafer features a slot in the center where the trap is located. Furthermore, the shape of the middle wafer allows the electrodes defined on the top and bot- tom wafer to extend towards the trap center (see Figure 4 b.) and 5 a.)). In this way, the electrodes are defined on a non-machined surface and vertical cuts through the wafer define the trap area and segmentation of the elec- trodes. An example of machined electrodes is shown in Figure 4 c.). The silica electrodes show sharp regular edges and very little surface roughness on the vertical 5 a.) b.) c.) FIG. 4: a.) Illustration of the full trap design. Shape of the middle wafer is optimized for low surface area. b.) Cross-section through the electrode configuration in the trap center. The dashed lines indicate where material was removed during laser-machining. The red lines mark unmachined surfaces of high quality. These surfaces are close to the trap center. c.) SEM image of the electrodes of a sample trap. The surfaces shown are the ones indicated by red color in the sketch in panel b.). The surface roughness is in the tens of nm range or below which should ensure low anomalous heating rates. faces of the segments, which is beneficial for building a small trap with low ion-electrode distance. A judicious choice of initial wafer thickness is advanta- geous, since it prevents adverse effects associated with the removal of a large amount of material. IV. SPECIFIC TRAP DESIGNS In this section we present two trap designs which aim to investigate aspects of scaling trapped-ion control for quantum information processing. The first trap design is a linear segmented trap which was designed to be com- alignmentinsetalignmentinsettrapslotgoodsurfacequalityelectrodewaferpatible with a short-length optical cavity for enhanced ion-photon coupling [44]. One primary concern in design- ing a trap integrated with an optical cavity is that the dielectric coatings of the mirrors can accumulate stray charges which disturb the ions [45]. Thus, shielding of stray fields is highly desirable. The machining precision provided by the laser-assisted etching described above allows to build a small multi-layer trap, in which elec- trodes can be placed in-between the cavity mirrors while keeping the cavity length short - in this case we aim for a cavity of length 300 µm. A cross-section illustration of the proposed cavity region is shown in Figure 5 a.). The trap design is based on three layers; two layers with DC-electrodes and one with RF-electrodes which is sand- wiched between the other two, also serving as alignment wafer. In our trap prototype we aim for an ion to nearest elec- trode distance of around 90 µm. Access for laser beams and the cavity mode is provided through holes with 100 µm diameter in the electrodes, which otherwise block all optical access. This provides shielding against stray fields originating outside the electrode structure. A close up view of these holes is shown in Figure 5 b.). The trap features two regions suited for optical cavities or optical fibers for light collection and delivery. It also includes an open "loading" region so that an atomic beam can be introduced for loading ions. A view of the DC electrodes over the full length of the trap is shown in Figure 5 d.). The ions will be shuttled along the trap axis using the segmented electrodes. The second trap we have designed and fabricated is a 3- dimensional segmented double junction trap. The trap consists of a total stack of 5 wafers, as shown in Figure a.) fiber cavity b.) m µ 0 7 1 m µ 0 5 3 100 µm d.) 6 5c.): a middle wafer which serves as a spacer and align- ment piece, two outer wafers which carry the main DC and RF trapping electrodes, and two additional wafers carrying electrodes for stray field compensation. The three central wafers, which are the inner ones in the full stack, are shown in Figure 5 e.). All wafers are self aligned in a similar fashion as described in section III A, and subsequently glued to each other. This trap has 144 electrodes, and includes many independently ad- dressable experimental zones as well as splitting, junction and storage zones. The two X junctions are key ingredi- ents for ion transport into 2-dimensions, which is critical for scaling. Several features rely on the ability to form 3-dimensional structures in fused silica. One such fea- ture is the RF electrode shape at the junction. Other features which we have implemented are electrodes an- gled at 45 degrees and vias for electrode connectivity. In initial designs we also included deep grooves which could host integrated optical fibres. We will briefly describe each in the following. and b.)) At the corners of the electrodes at the junction, two op- posing protrusions (Figure 6 a.) are used to break the symmetry of electric fields, producing 3- dimensional confinement of an ion at the center of the junction, which is not present for a 4-fold symmetric de- sign [22]. A previous junction trap was built at NIST, but featured full bridges which crossed from one side of the junction to the other [22]. Both the protrusions and bridges give rise to pseudopotential energy barriers which the ion must traverse as it enters the junction. However these are much larger for a full bridge than for the pro- trusions. c.) e.) cavity detection loading FIG. 5: a.) Cross-section illustration of the cavity zone, cavity length 350 µm. b.) SEM image of the holes for laser access in one of the DC-wafers. d.) Shows a capture of one DC-wafer (constructed from four microscope images) over the full length of the trap with cavity zone on the left, detection zone and loading zone on the right. Segmented DC-electrode for shuttling the ions along the trap axis, width of one segment: 250 µm. c.) Side view of the full wafer stack of the double junction trap, main trapping wafers are shown in yellow, compensation wafers in dark red and middle wafer in bright red. e.) stack of the main 3 wafers, the outer wafers carry RF and DC electrodes, the inner wafer serves as an alignment piece and can be used to integrate optical fibres. 7 a.) b.) x-junction protrusion c.) d.) angled face through-wafer via polished mirror FIG. 6: Features of the junction trap which are made possible by the enhanced laser writing technology: a.) and b.) protruding 3D structures serving as partial RF bridges, c.) surfaces angled at 45 degrees for enhanced optical access and d.) through-wafer via for electrical connectivity. Gradients of the pseudopotential at the sides of the barri- ers can introduce undesirable heating mechanisms. With the flexibility available from the laser-enhanced etching, we are able to chose the length of the protrusions - the final design was chosen as a compromise between con- finement at the center and the magnitude of the energy barriers. The resulting protrusions are 100 µm wide and 50 µm thick. The front surface of all electrodes is angled at 45 degrees to provide high optical access for laser beams and a large solid angle for light collection. Since these faces are ma- chined they exhibit a roughness of hundreds of nm, as visible in Figure 6 c.). This roughness is not on the side of the trap that faces the ion, therefore any imperfec- tions on this face should be shielded at some level from the ion. The RF electrode is defined on the inner (ion- facing) side of the wafer, and then is connected through a via (Figure 6 d.)) to the top wafer surface where it is wire bonded. The via consists of a 0.3 mm diameter hole with vertical faces. The electrical connection is made by evaporating gold on it at an angle. We have inves- tigated the resistance of the electrode when evaporated with a thin layer of gold (700 nm) and have detected an increase of the resistance through the via on the order of 1 Ohm. Typically, evaporated tracks in the range of 10 mm in length (as are often used in electrode connections) exhibit a resistance between 1 and 5 Ohms. A subsequent electroplating step should allow to further reduce this re- sistance. Different via diameters are also possible. Tests on a 300 µm thick wafer have shown that holes can be machined reliably down to a 50 µm diameter. As we can fully coat gaps with width on the order of 20 µm and sim- groove a.) squared groove b.) FIG. 7: Integration of lensed optical fibres within the middle wafers. Close to the trap center, a facet angled at 45 degrees is polished and metal-coated to create a mirror to direct the light out of the trap, as shown in inset a.). Squared grooves to guide the fibers are machined in the middle wafer, as shown in inset b.). ilar vertical depth, we think that it should be possible to fully coat 50 µm vias. A further set of tests were performed to assess the viabil- ity of incorporating optical fibres for laser beam delivery. For this purpose, following the approach of [46], we fab- ricated squared grooves into the middle wafer which are shown in inset b.) of Figure 7. We found that these could be machined with horizontal widths which are un- certain to ± 5 µm. Our original aim in these tests was to insert photonic crystal optical fibres (PCF) in these low tolerance grooves, ensuring good vertical and hori- zontal alignment of the beams. PC fibres were stripped of their coating layer and their glass cladding, which has a 230 ± 5 µm diameter, and were inserted and glued in 237 µm wide grooves. For laser waist diameters be- tween 30 and 40 µm, this technique provides a relatively easy and robust alignment, with maximal theoretical dis- placements of 6.5 µm between the ion's location and the center of the beam waist. The PC fibres used had lenses melted onto the tip [47], with a working distance in the order of 500 µm at 729 nm. To allow light to exit the structure, we envisioned using polished mirror surfaces on the opposite side as the fibre grooves, directing inci- dent light out of the trap structure, as shown in inset a.) of Figure 7. We have used an SEM to image the mirror surfaces machined using laser-enhanced etching, which, when gold coated, seem suitable for our purpose. Their micro-roughness is in the order of a nanometer, as shown in Figure 2 c.). 8 surfaces where material had been removed. These un- desired grooves, which can reach 15 µm in depth, have been avoided by implementing a small radius of curvature at all intersecting surfaces and by applying a final pol- ishing step following the machining. We conclude that it is important to consider these effects in the design stage. V. FABRICATION PROCESS Once the substrates have been fabricated using laser en- hanced etching, we use five standard steps to pattern electrodes and wires. All these steps are carried out in a cleanroom environment. The first step is a thorough cleaning of the wafers in a Piranha acid solution. Next the wafers are coated using electron beam evaporation. We apply a titanium adhesion layer with thicknesses on the order of 100 nm, followed by 200 nm of gold. For each wafer, we perform several evaporation steps at different angles to ensure that all desired faces are covered and use laser-cut molybdenum shadow masks to define our elec- trode tracks. The evaporation is reliable and produces smooth surfaces. Photographs of single wafers from each of the two designs described above are shown in Figure 9. If desired, the evaporation step is followed by electro- plating, which thickens the gold layer from a few hundred nanometers to a few microns. Once all trap wafers are coated, we proceed to assemble and to glue them. For the gluing we have used the UV-cured Epotek OG198-55 for traps which we aim to use at room-temperature, and Stycast for traps designed for cryogenic set-ups. undesired grooves FIG. 8: Machining defects can appear in areas where a lot of material is removed, and where faces at different angles meet. Cuts up to 10 µm in depth can also be present, as indicated by the red arrows. These can be mitigated by introducing a small radius of curvature and by applying a polishing step at the end of the process. The complex geometries present in the double junction trap produce unexpected stress in the silica substrate. As a consequence we have noticed an increased number of defects, particularly at the junction, where lots of mate- rial has been exposed to the laser. We have also observed stray machining cuts on several samples at the interface between different zones of the wafer, such as along the 45 degree angled faces, as shown in Figure 8, and on planar a.) b.) FIG. 9: a.) Photograph of one electrode wafer from the cavity integrated trap after fabrication process with metal deposition of up to 5 µm thickness, 80 DC-lines (40 per wafer) and two large ground planes. b.) Photograph of a double junction trap wafer after evaporation of 200 nm of titanium and 700 nm of gold. The smallest electrode is 30 µm wide. VI. CONCLUSIONS We have described how laser-enhanced etching can be used to create precisely aligned multi-wafer stacks with novel features for 3-dimensional ion traps. We outlined a number of possibilities which we have investigated uti- lizing these techniques. 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[47] https://www.wttechnology.com/, (2018). 10 c.) 11 a.) b.) d.) 250 µm 750 µm FIG. 10: a.) Sketch of the initial alignment strategy (exploded assembly) with alignment features (cones) integrated into one of the wafers. The initial approach was already based on three point support and the trap would have been located in the center of the wafers. b.) Detailed drawing of one of the alignment features, all material around it has to be removed using femtosecond laser enhanced etching. c.) SEM image of one of the alignment cones and the surrounding surface. Due to the intense machining the surface quality is not very good, furthermore above mentioned defects like grooves already appear in this early sample. c.) Surface profile across the machining grooves. Appendix A: Previous alignment approach The initial alignment strategy was based on two wafers with alignment features integrated into one of the wafers as illustrated in Figure 10 a.). The alignment features were small cones rising from the wafers top plane, which means that the material around them and over the full surface (20 × 20 mm2) of the wafer has to be removed by femtosecond laser machining. Panel b.) in Figure 10 shows a detailed drawing of one of this cones. Due to the removal of a large quantity of material, the thickness of the wafer carrying the alignment features varies by more than 20 µm and the surface roughness exceeds the one described in the main text (section II B) by a factor of 10 (see Figure 10 d.)). Due to stress that appeared dur- ing laser engraving the machined surface also showed the characteristic grooves described in section II B as one can see in Figure 10 c.). Furthermore, we have observed a bending of the wafer which led to a variation of the dis- tance between stacked wafers of more than 20 µm. 0200400600800x[µm]−101z[µm]
1905.10181	1	1905	2019-05-24T12:20:51	Monolithic semiconductor hemispherical micro cavities for efficient single photon extraction	[ "physics.app-ph", "physics.optics" ]	We present a monolithic semiconductor microcavity design for enhanced light-matter interaction and photon extraction efficiency of an embedded quantum emitter such as a quantum dot or color center. The microcavity is a hemispherical Fabry-Perot design consisting of a planar back mirror and a top curved mirror. Higher order modes are suppressed in the structure by reducing the height of the curved mirror, leading to efficient photon extraction into a fundamental mode with a Gaussian far-field radiation pattern. The cavity finesse can be varied easily by changing the reflectivity of the mirrors and we consider two specific cases: a low-finesse structure for enhanced broad band photon extraction from self-assembled quantum dots and a moderate-finesse cavity for enhanced extraction of single photons from the zero-phonon line of color centers in diamond. We also consider the impact of structural imperfections on the cavity performance. Finally, we present the fabrication and optical characterisation of monolithic GaAs hemispherical microcavities.	physics.app-ph	physics	Monolithic semiconductor hemispherical microcavities for efficient single photon extraction G. C. Ballesteros,∗ C. Bonato,† and B. D. Gerardot‡ Institute of Photonics and Quantum Sciences (IPaQS), Heriot-Watt University, Edinburgh, EH14 4AS, UK§ (Dated: May 27, 2019) Abstract We present a monolithic semiconductor microcavity design for enhanced light-matter interaction and photon extraction efficiency of an embedded quantum emitter such as a quantum dot or color center. The microcavity is a hemispherical Fabry-Perot design consisting of a planar back mirror and a top curved mirror. Higher order modes are suppressed in the structure by reducing the height of the curved mirror, leading to efficient photon extraction into a fundamental mode with a Gaussian far-field radiation pattern. The cavity finesse can be varied easily by changing the reflectivity of the mirrors and we consider two specific cases: a low-finesse structure for enhanced broad band photon extraction from self-assembled quantum dots and a moderate-finesse cavity for enhanced extraction of single photons from the zero-phonon line of color centers in diamond. We also consider the impact of structural imperfections on the cavity performance. Finally, we present the fabrication and optical characterisation of monolithic GaAs hemispherical microcavities. 9 1 0 2 y a M 4 2 ] h p - p p a . s c i s y h p [ 1 v 1 8 1 0 1 . 5 0 9 1 : v i X r a ∗Electronic address: [email protected] †Electronic address: [email protected] ‡Electronic address: [email protected] §URL: http://qpl.eps.hw.ac.uk/ 1 I. INTRODUCTION Several applications of quantum technology rely on single photon emission [1 -- 3]. De- terministic sources of pure and indistinguishable single photons are a crucial prerequisite to linear optics quantum computing [4] and restricted models of non-universal quantum computation [5]. Long-distance quantum communication using quantum repeaters [6] relies on a coherent interface between photons and matter qubits [7], such as spins associated to quantum dots [8] or colour centres [9]. In both cases, efficient photon extraction from the emitter is crucial, either to reach the fidelity threshold for fault-tolerance or to achieve a significant communication speed. The efficiency of single photon extraction can be enhanced by a structure that re- distributes the emitter radiation into a highly-directional spatial profile which is easy to collect. For some applications, collection must be enhanced over a broad spectral band- width. A possible approach is to use non-resonant structures such as solid immersion lenses (SIL) or nanowires. A micro-scale solid immersion lens [10 -- 12] significantly reduces total internal reflection by the high-index host material, leading to increased, though far from unity, photon extraction over a very wide spectral region. Broadband extraction with effi- ciency close to unity can be achieved in a nanowire structure [13, 14]. This configuration can however be problematic when fabricating electrical contacts or exploiting the spin of the emitter, which is subject to dephasing induced by the nanometric proximity to the nanowire walls. A different approach involves coupling the emitter to a resonant structure, which exploits the Purcell effect to reduce the radiative lifetime of the source and increase the rate of excitation/emission events. Additionally, it favours coupling to a single mode that can be efficiently collected over guided modes within the plane of the sample. High-Q resonant microcavities, such as micropillar and photonic crystal structures, are particularly valuable when the emitter features strongly phonon-broadenend transitions, e.g. the nitrogen-vacancy colour centre in diamond. In this case, the coherent zero-phonon line can couple efficiently to the resonant mode, achieving a significant Purcell factor, which results in a strongly enhanced emission at the expense of the phonon-broadened transitions [16]. High-Q microcavities, however, present several technological challenges, since they require precise spectral tuning of the cavity resonance on the emitter frequency. While fully-tunable open microcavities have 2 been demonstrated [16 -- 20], tunability comes at the price of reduced mechanical stability and increased sensitivity to vibrations [21] Here, we propose a monolithic hemispherical cavity which addresses the mechanical sta- bility challenges outlined above. It is a flexible design which provides stable cavity modes with lifetimes that can be tailored by modifying the reflectivity of the enclosing mirrors. For narrowband emitters, such as InAs/GaAs quantum dots, a weakly-resonant structure with only a moderate Purcell factor is sufficient to achieve a very strong spatial directionality of the emitted photons. We discuss three design variations, adapting the quality factor to the properties of the specific emitter under consideration. We also fabricate and optically characterize a monolithic GaAs hemispherical microcavity to experimentally verify optical resonances in the structure. II. CONCEPT AND THEORY Our basic design consists of a hemisphere with radius of curvature R milled on the surface of a material slab of thickness L with embedded optical emitters (Fig. 1). In the lower- Q version (Fig. 1a), reflection from the top air-material interface provides the required longitudinal optical confinement. In this case, a gold mirror can be used at the bottom of the structure since losses are dominated by transmission through the upper interface. This design is suitable for narrowband emitters such InAs/GaAs quantum dots or silicon-vacancy centres in diamond and is appealing due to its simplicity and ease of fabrication. In order to reduce losses through slab guided modes, the quality factor can be increased by adding a 2.5- period conformal DBR on the top surface to increase confinement and Purcell enhancement ("medium-Q" configuration). Finesse can be further increased by adding additional DBR layers to the top surface and substituting the bottom gold mirror with a DBR to reduce non-radiative losses ("high-Q" design). The high-Q version is suitable to enhance radiation into the coherent zero-phonon line for solid-state emitters [15, 16]. All three versions are based on a monolithic design that minimizes mechanical instability issues associated with open cavities and is fully compatible with the integration of electrical contacts for charge-state control and electrical tuning of emitter transitions[22, 23]. The structure can be fabricated via Focused Ion Beam (FIB) milling [10, 11] or gray-scale lithography and dry etching [12, 24]. The proposed designs require minimal etch depths, 3 reducing fabrication errors and crystal damage. Our microcavity can be modeled based on standard hemispherical laser cavities [25], which we briefly summarize here to discuss the trade-offs associated with each parameter. A hemispherical cavity supports stable modes if the center of curvature of the spherical cap lies below the flat mirror, i.e. R > L, as shown in Fig. 1. The cavity features Laguerre-Gaussian modes, indexed by their axial (q), radial (n) and azimuthal (m) numbers as TEMq,n,m owing to their transverse electromagnetic nature. The resonance condition is given by: (cid:32)(cid:114) (cid:33) ∆φrt 2 − (n + m + 1) cos−1 1 − L R = qπ (1) where ∆φrt is the phase accumulated on a round-trip through the cavity. An emitter close to a field antinode experiences a reduction in radiative lifetime due to the Purcell effect. This increases the source efficiency since photons are preferentially emitted into the cavity modes rather than into modes guided in the sample. The Purcell factor increases with the (cid:0) λ (cid:1)3(cid:0) Q n V (cid:1). High directionality in optical emission stems from (cid:115) θ1/e = , (2) π(cid:112)L(R − L) λ cavity quality factor as Fp = 3 4π2 transverse mode TEMq 0 0 is: the modes supported by the cavity. Since the far-field divergence angle of a fundamental the beam divergence is minimized when R = 2L. To evaluate the overall performance of photon extraction we define the figure of merit (FOM): F OM = ηNA coll × ηext × Fp, (3) where ηNA coll is the fraction of power emitted into the far-field that can be collected with a lens with numerical aperture NA: ηNA coll = (cid:82) arcsin(NA) (cid:82) π/2 0 0 dθ P (θ) sin θ dθ P (θ) sin θ . (4) ηext is the extraction efficiency computed as the fraction of power emitted that does not couple to guided modes and Fp is the Purcell factor. The figure of merit is proportional to the power emitted by the micro-cavity for a given excitation power, providing a valuable performance estimator. As a reference, the emission of a dipole embedded in a homogeneous medium collected using index-matched lenses with N A = 1 would result in FOM = 0.5. 4 The depth of the hemispherical etch, L − h (Fig. 1), determines both the order of the highest transverse mode that can exist within the structure and the fabrication complexity. Shallower structures allow faster fabrication reducing cost and beam drift problems during FIB etching. Higher order modes are spatially larger and therefore require large hemispher- ical surfaces. The etch depth L− h must be as small as possible to strongly suppress higher order transverse modes and minimize fabrication time, while avoiding the apodization of the fundamental transverse modes. III. DESIGN AND PERFORMANCE ANALYSIS For ease of comparison, we consider designs based on a slab of GaAs (refractive index nc = 3.48); extension to other materials, such as diamond or silicon carbide, is straightforward. The cavity dimensions are listed in Table I. According to Eq. 2, a low beam divergence is achieved by a long cavity length. On the other hand, a short cavity increases Purcell enhancement. As a trade-off, we choose a 11th order cavity, designing L to set the resonance wavelength at 940 nm (Eq. 1). Efficient coupling to a resonant mode is achieved when the emitter is located at an antinode of the electric field. In hemispherical cavities, the strongest field antinode is located closest to the flat mirror at a distance of approximately half the resonant cavity wavelength. However, in the following discussion we locate the emitter at the position of the second anti-node to avoid surface-induced decoherence or coupling to surface plasmon polaritons in the case of a metallic mirror. The depth of the etch, i.e. L − h is no more than 190 nm, which greatly facilitates fabrication. The electromagnetic modes of the structures in Fig. 1a-c were simulated using a commer- cial finite-difference time-domain software (Lumerical). Eq. 1 predicts a resonant wavelength of 910 nm for the T EM11,0,0 mode. We attribute the small deviation in wavelength to re- flections at the interfaces and to the apodization of the mode at the top hemisphere. The simulated Purcell enhancement (Fig. 2a), exhibits several peaks corresponding to the fundamental transverse modes TEM11,0,0 (≈ 940 nm), TEM10,0,0 (≈ 1020 nm) and to higher order transverse modes TEM(10,11),n,m. These modes are weakly excited due to the presence of field antinodes along the axis of the cavity and the apodization of the mirror. As expected, higher mirror reflectivity leads to higher Purcell factor and FOM. Mirror reflectivity also 5 affects the extraction efficiency: as confinement increases, the relative density of photonic states between guided modes and the resonant cavity mode decreases. This leads to a better coupling into the mode of interest and increased extraction efficiency for the low and medium quality factor structures. The high quality factor structure has its extraction efficiency limited by light lost at large angles on the DBR. This effect is evidenced by the highly-directional far-field emission in Fig. 2d for the TEM11,0,0 resonance medium-Q case. The emitted Gaussian profile with an angular spread of ±25◦ (corresponding to NA = 0.42), leads to a a 20-fold enhancement of the figure of merit of the device when compared to the unetched case. On the other hand, increased mirror reflectivity decreases the operation bandwidth ∆λ: in our simulation ∆λ decreases from 14 nm to less than 1 nm from the low-Q to the high-Q case. The robustness of this design to source misplacement is an important technological con- sideration. As evidenced by the field profiles in Fig. 1 d, the beam waist is located at the top of the gold reflector with a mode radius of 238 nm. Any emitter within approximately half this distance from the center of the cavity couples sufficiently to the cavity mode. Figure 3 reports simulation results in the medium-Q case for a dipole source shifted from the cavity center by up to 100 nm. As expected, the pointing angle of the radiation pattern deviates from the optical axis. However, the resulting Purcell factor does not degrade significantly. The positioning imperfection investigated by our simulations is larger than what has been experimentally achieved with deterministic fabrication processes [26]. A second set of simu- lations addresses the effect of surface roughness on the device performance. A Monte Carlo analysis, comprising 2500 simulations for a root mean square roughness of 5 nm in the case of a medium Q cavity, is reported on the bottom of Fig. 3. To limit the computing time, 2D FDTD simulations were used since such an analysis with 3D simulations is not practical. Comparing the results of the two methods, the significant differences in Purcell factor are due to the cylindrical (∼ 1/r decay) nature of waves in 2D simulations versus spherical waves (∼ 1/r2 decay) in 3D simulations. Figure 3 shows that even for a high value of the roughness the device is expected to operate close to optimum performance with a high probability. 6 IV. FABRICATION AND CHARACTERIZATION Samples based on the low-Q design were fabricated and optically characterized. Unlike the design presented above the fabricated sample made use of a DBR as bottom reflector instead of a layer of Au. Due to the low quality factor of the device, modifying the bottom mirror only required a small re-optimization of the height of the cavity. The samples were fabricated using water assisted FIB. The FIB current was 50 pA in each case, providing a good compromise between milling speed and Ga redeposition. The depth of the etch was designed to be 180 nm. To facilitate calibration of the fabrication parameters, several other structures with etch depths of 150 nm, 160 nm, 170 nm were made. The milling time for each structure was 20 minutes approximately; the only differences were the number of passes taken by the FIB mill. Figure 4 show an SEM image of one of the devices. One can observe small droplets inside the milling area due to gallium redoposition. The milled structures were then characterized via AFM. The measured profiles were fitted to a hemisphere on a plane. The height (h) as a function of the (x, y) coordinates is given by: , zs + h(x, y) = √ R2 − r2 if (zs + zp if (zs + √ √ R2 − r2) > zp R2 − r2) ≤ zp , where r is the radial coordinate, zs is the position of the sphere center with respect to the coordinate origin, zp is the z position of the flat area and R is the radius of curvature of the spherical section. An example of such fit can be seen in Fig. 4. The small difference between the fit function and the measured AFM profile demonstrates how well the required structures can be fabricated. We optically characterized the cavity modes by measuring the reflectance of the structure using a confocal microscope setup. The samples were illuminated with a fibre coupled infrared LED lightsource with emission centered at 940 nm. Figure 5 shows the results of the differential reflectance measurements taken on eight of the hemispherical microcavities. The differential reflectance is defined as: ISIL(λ) − Iref(λ) Iref(λ) , 7 (5) where Iref(λ) is a measurement of the reflected spectra made on a flat area adjacent to the structure and ISIL(λ) is a measurement of the reflected spectra when focusing at the center of the structure. Each measurement shows two clear dips at around 920 nm and 960 nm. These correspond to the two broad resonances of the low-Q design (purple curves in Fig. 2). A shift of 20 nm with respect to the simulations can be observed which could be due to fabrication inaccuracies. The FWHM of the measured resonances is of 24 nm and 31 nm. V. CONCLUSION AND OUTLOOK These results demonstrate the potential of the micro-cavity design for a large range of applications. In the case of narrowband emitters, the low and medium Q configurations are preferable due to their ease of fabrication, broadband operation and resilience to im- perfections such as scattering losses. Additionally, a low-Q design is more favorable for the implementation of spin-photon interfacing protocols based on spin-selective circularly- polarized optical transitions [27], as for InAs/GaAs quantum dots. Typically, strain and fabrication imperfections break the degeneracy of the fundamental mode into a pair of linearly-polarized modes. In the case of narrow resonances, when the frequency splitting between the two linearly-polarized modes is larger than the linewidth, this system cannot support the required circularly-polarized modes [28]. On the other hand, the wider band- width associated with the low/medium-Q configurations significantly reduces this problem. The high-Q configuration is particularly suitable for emitters with incoherent broadband emission accompanying the coherent zero-phonon line, such as nitrogen-vacancy centres in diamond. Such emitters predominantly radiate into incoherent phonon sidebands, which hardly exhibit any Purcell enhancement when coupled to a cavity. Phonon-broadened emis- sion cannot be used in quantum interference experiments, providing a limit to the success rate for measurement-based spin entanglement protocols [29]. In this case, a high-Q micro- cavity approach as shown in Fig. 1c is desirable since it can drastically enhance the coherent zero-phonon emission at the expense of the phonon-broadened transitions [15, 16]. In the high-Q scenario, an additional challenge is the requirement for spectral tunability, due to the narrowband operation range. Compared to the open microcavity case, in our design transverse optical confinement is provided by the hemispherical surface milled on top of the emitter. Consequently, no in-plane scanning capability is required and the only 8 parameter that needs to be tuned is the cavity resonance frequency. This can be achieved by a single piezo-element that controls the distance between the sample and a (detached) bottom mirror. Requiring only one movable element, this configuration can be expected to be mechanically more stable than an open cavity featuring motion along three axes with a stack of piezoelectric elements. In summary, we have presented a novel microcavity design suitable for efficient photon extraction from optical emitters embedded in high index of refraction mediums such as III-V quantum dots and luminescent point defects in wide-bandgap semiconductors. One example of the proposed structure has been fabricated in a GaAs sample and optical and structural characterization reveals good agreement with the targeted design. VI. FUNDING INFORMATION This work has been supported by the Engineering and Physical Sciences Research Council (EPSRC) under the grants: EP/I023186/1, EP/L015110/1, EP/S000550/1, EP/P029892/1 and by the European Research Counil (ERC) under grant number 725920. B.D.G. thanks the Royal Society for a Wolfson Merit Award and the Royal Academy of Engineering for a Chair in Emergent Technologies. [1] N. Somaschi, V. Giesz, L. De Santis, J. C. Loredo, M. P. Almeida, G. Hornecker, S. L. Portalupi, T. Grange, C. Antn, J. Demory, C. Gmez, I. Sagnes, N. D. Lanzillotti-Kimura, A. Lematre, A. Auffeves, A. G. White, L. Lanco, and P. Senellart, Nat. Photon. 10, 340 (2016). [2] X. Ding, Y. He, Z.-C. Duan, N. Gregersen, M.-C. Chen, S. Unsleber, S. Maier, C. Schneider, M. Kamp, S. Hfling, C.-Y. Lu, and J.-W. Pan, Phys. Rev. Lett. 116 (2016). [3] A. C. Dada, T. S. Santana, R. N. E. Malein, A. Koutroumanis, Y. Ma, J. M. Zajac, J. Y. Lim, J. D. Song, and B. D. Gerardot, Optica 3, 493 (2016). [4] E. Knill, R. 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The medium-Q configuration features a top DBR with 5 layers and a bottom gold mirror. In the high-Q case, the top DBR consists of 9 layers and the bottom DBR of 20 layers. All DBRs are designed around a central wavelength of 914 nm. In all cases, R = 2L. FIG. 1: Three examples of hemispherical micro-cavity designs. The dipole moment of the emitter is contained in the XZ plane. The cavity with index of refraction nc, has length L. The height of the remaining slab is given by h. Case a) low-Q case: a hemispherical cap is etched onto a membrane embedding the emitters, coated with a bottom gold mirror. b) medium-Q case: a DBR comprising 5 layers is added on the top. c) high-Q case: including DBRs at the top and the bottom. d) Intensity profile for the fundamental cavity mode, in the medium-Q case (FDTD simulations). 12 FIG. 2: (color online). FDTD simulation results. All structures have been adjusted in order to have the T EM11,0,0 mode at an excitation wavelength of 940 nm. (a) Purcell factor. (b) FOM using Eq. 3. The blue line shows the FOM for an un-etched structure. The grey horizontal dotted line represents the figure of merit for a dipole embedded in a homogenous medium with NA=1 and perfect extraction efficiency. (c) Extraction efficiency. (d) k-space representation of the far-field emission for the medium-Q cavity. The inner white circle marks the wavevectors collected by a lens with NA=0.68 13 FIG. 3: Robustness against source displacement and surface roughness. a) Emission profile and b) Purcell factor for a source displaced from the center of the cavity by 0, 50 and 100 nm. Only a slight degradation is observed. c) and d) Monte Carlo study of the effect of surface roughness on the performance of the TM micro-cavity. The shaded are represents the 90% interval. The continuous line represents the most probable value and the dashed line the performance of the smooth device. 14 nmnmnmFIG. 4: (a) Close-up scanning electron microscope image of µSILs. The small droplets next to the the structure are caused by Ga redeposition. (b) Raw AFM data. (c) Fit to AFM data . (d) Difference between the best fit surface and the AFM data. The structure shown here has a radius of curvature of of 3.2 µm and the depth of the etch is a 151 nm. The root mean square value of the roughness of the µSIL based on the fit and the AFM values is of 4 nm which is much smaller than the operation wavelength. 15 FIG. 5: Room temperature differential reflectance spectroscopy on microSILs. The target depth etch on the FIB was 160 nm (a), 170 nm (b), : 180 nm (c) and 190 nm (d). Two structure were fabricated for each target depth. Orange and blue curves show the optical characterization for each pair. 16 8759009259509751000(nm)0.50.40.30.20.10.0Differential Reflectance170 nm8759009259509751000(nm)0.60.40.20.0Differential Reflectance160 nm8759009259509751000(nm)0.50.40.30.20.10.0Differential Reflectance180 nm8759009259509751000(nm)0.50.40.30.20.10.0Differential Reflectance190 nma)b)c)d)
1906.10862	1	1906	2019-06-26T06:22:25	Highly efficient acoustic refractive metasurfaces by harnessing near field coupling	[ "physics.app-ph" ]	Typical acoustic refractive metasurfaces governed by generalized Snell law require several types of subwavelength subunits to provide an extra phase gradient along the surface. This design strategy, however, has several kinds of drawback. For instance, the inevitable viscous loss brought out by the complex subwavelength subunits, and the negligence of the coupling between adjacent subunits which leads to low-efficiency in wavefront manipulation, especially for large angles. To overcome these limitations, we propose a new type of refractive metasurface composed of only one straight channel and several surface-etched grooves per period. By harnessing the nonlocal coupling between the channel/grooves, and the evanescent modes inside them, superiorly feasible acoustic transmission manipulations can be achieved. Nearly perfect acoustic bending with transmission efficiency up to 95% is demonstrated with theory and experiments for an extremely large angle of 81 degree. The reported results introduce a novel concept of acoustic metasurfaces and offer a real leap towards the development of high-efficient acoustic devices for wavefront manipulation.	physics.app-ph	physics	Highly efficient acoustic refractive metasurfaces by harnessing near field coupling Zhilin Hou,1† Xinsheng Fang,2† Yong Li,2* Badreddine Assouar3* 1School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China. 2Institute of Acoustics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China. 3Institut Jean Lamour, Université de Lorraine, CNRS, F-54000 Nancy, France. † These authors contributed equally to this work. * [email protected] * [email protected] Abstract Typical acoustic refractive metasurfaces governed by generalized Snell's law require several types of subwavelength subunits to provide an extra phase gradient along the surface. This design strategy, however, has several kinds of drawback. For instance, the inevitable viscous loss brought out by the complex subwavelength subunits, and the negligence of the coupling between adjacent subunits which leads to low- efficiency in wavefront manipulation, especially for large angles. To overcome these limitations, we propose a new type of refractive metasurface composed of only one straight channel and several surface-etched grooves per period. By harnessing the nonlocal coupling between the channel/grooves, and the evanescent modes inside them, superiorly feasible acoustic transmission manipulations can be achieved. Nearly perfect acoustic bending with transmission efficiency up to 95% is demonstrated with theory and experiments for an extremely large angle of 81°. The reported results introduce a novel concept of acoustic metasurfaces and offer a real leap towards the development of high-efficient acoustic devices for wavefront manipulation. Introduction Highly efficient wave manipulation via artificial structures is strongly desired in materials physics and engineering communities. As a thin compact structure, acoustic metasurfaces has attracted significant attention in recent years because of their unique functionalities and capabilities in controlling and transforming the wavefront [1]. Many fascinating and exotic functionalities, such as anomalous refraction and reflection [2-10], asymmetric transmission [11-13], retroreflection [14, 15], perfect absorption [16, 17], and other abnormal wave phenomena [18-20] have been realized by using such kind of inhomogeneous two-dimensional materials. It can be found however that, the devices to realize those functionalities and physical effects are mostly constructed based on the phase-gradient approach [21], which often provide very complicated building subunits. For example, to design a metasurface by which an incident wave can be steered into an anomalous direction, we first should predetermine a continuous surface with suitable lateral phase profile, and then discretize the phase profile into subwavelength unit-cell sizes and implement them by intentionally designed elements. To improve the lateral discretizing resolution and to meet at the same time the requirement of matching both the phase and amplitude profiles of the input and output fields, the subunits have to be designed as multi-folded tubes [8] or multi-connected Helmholtz resonators [5] with narrow channels and thin walls. Such a complex structure will increase the difficulty in fabrication process and practical implementation. More importantly, because the viscous effect in narrow channels and deformations of the thin walls become larger when their size becomes thinner, we hardly can design a metasurface for wave manipulation in small wavelength range. These important drawbacks will greatly limit their applications in innovative technologies. Recently, metasurfaces for anomalous refraction were revisited by several groups for both electromagnetic [22, 23] and acoustic waves [2, 3]. These works are originally raised to improve the efficiency of metasurfaces. It has been pointed out that, because the nonlocal effect caused by the surface evanescent mode has not been taken into account in the design procedure, devices based on phase-gradient approach have intrinsic problem of efficiency. To solve it, the nonlocal effect was suggested to be pre-included into an impedance matrix profile, upon which the meta-atoms can be designed [22]. With these efforts, the efficiency of metasurfaces has been improved. However, to realize the impedance matrix profile along a surface, one still need to discretize it into sub-units. This mean narrow channels and thin walls will still need to be used in the subunits structure. Furthermore, because the transmission and reflection coefficients of meta-atoms are required to be bi- anisotropic, the design of meta-atoms for such kind of structure becomes more complicated. In this paper, we show alternatively that a refractive metasurface can also be designed as simple as a periodic sound-hard planar layer with one straight-walled channel and several surface-etched grooves per period. We name it as single meta-atom metasurface because there is only one channel per period in the structure. In the latter, we do not need a discretizing and matching procedure in the design procedure, which means, structure with very narrow channel and very thin wall can be avoided. As demonstrations, we show that, a structure with one channel and several grooves can perfectly refract a normal incident plane wave into directions with angles as 63°, 72° and 81°. The obtained structures with transmission efficiency over 95% are checked by finite element simulation supplied by Comsol Multiphysics. The physics for those structures is also investigated. We find that the power flow can be strongly redistributed in the lateral direction by the surface evanescent mode. These results suggest that the local power conservation condition in the surface-normal direction, which is considered as the basic requirement in the bi-anisotropic metasurface designing, is in fact unnecessary to be satisfied. The sample with refractive angle as 72° is further evidenced by experiment. The measured data perfectly agreed with the simulation results. It is necessary to point out that, although perfect metasurfaces with simple structure for electromagnetic waves have been reported recently [24-26], the control of sound would however result in bulky device if we directly translate the same mechanism into acoustics. Currently, efforts have been made on reflective metasurfaces for acoustic waves, and devices with single subunit [27] or with simply structured subunits per period [9, 28] have been suggested, but a refractive one with simple structure is still a challenge. Results Structure of the metasurface and the Grating theory for diffraction property We consider the structure plotted schematically in Fig.1, which is a periodic planar sound-hard layer with thickness h and lateral pitch a. In each period, there are one straight-walled channel with width tc and L rectangular-shaped grooves on both the upper and lower surfaces (L=2 in the figure is show). To make the structure as compact as possible in thickness, and for sake of simplicity, in this research we set all the widths of these grooves to be t and all of intervals between to be w. The depth of the lth (l=1,⋯,L) grooves is denoted by , where the superscript u (d) means the upper (lower) surface. Notice that these depths should satisfy the ) ld u d ( , condition d u l + d d l <- h d w for the considered structure, where dw is the smallest thickness of the wall between the upper and lower grooves. As is shown by blue arrows in Fig. 1(A), the purpose of our designing is to refract the normally incident energy into an angle θt with 100% efficiency. It has been proven in Refs.[3] and [22] that this purpose cannot be fulfilled by the phase-gradient metasurfacce because one cannot design such a subunit series, with which the required phase gradient along the metasurfaces and the impedance matching between the incident and the desired scattered waves could be simultaneously satisfied. We argue that the main physics behind this difficult stems mainly from the effect of near field interaction. As we know, as the subunits are isolated with each other, we can indeed manage their transmission and phase delay simultaneously by the structure, but when they are closely gathered in one period in wavelength scale, they will interact strongly with each other. As a result, the physical properties of these subunits depend strongly on their neighbors, or say, their properties are nonlocal. Based on this understanding, we select the general grating theory to solve the problem. The advantage of this theory is that it can include explicitly the high-order evanescent modes, by which the interaction between the subunits can be fully taken into considered in the design procedure. as 0th, ±1st, ⋯, order diffractive components on both side of the structure. The design procedure can be started According to the general grating theory, an incident wave from the negative y-direction will be diffracted by adjusting the relative position, the width, and the depth of the grooves and channel, so that the structure can extinguish all the other propagation components except the one in the desired direction. However, the problem can hardly be solved in a direct way because there are too many parameters in the structure. In this paper, we employ the grating theory combined with an optimization algorithm to solve this problem. In addition, to guarantee a high compactness of the device and to simplify the design procedure, we restrict our research just on the configuration shown in the figure. To design such a metasurface, we develop a half-analytical method based on the general grating theory, by which the diffractive property of a structure with given channel and grooves can be rigorously calculated. With this method, the desired structure is searched by an optimization algorithm. The detail of the method and the description of the optimization procedure can be found in the supplemented material. Performance of the refractive metasurfaces As demonstration, metasurfaces with θt=63°, 72° and 81° under normal incident plane wave are searched, where θt is the angle between the direction of transmitted wave and surface normal. For these purposes, we first set the period of the structure as a=λ/sinθt , under which only the 0th and ±1st order diffractive components on both side of the structure are propagating modes, that means what we need to do is to find a suitable geometric substructure, by which the 1st order mode in transmitting end is enhanced and in the same time all the other propagating modes are extinguished. For sake of simplicity, we fix h=0.4λ, dw=0.05λ, tc=0.1a and w=0.05a for all the structures, and make the optimization only for the depth of grooves. The L value is chosen manually as small as possible to get the simplest structure. Under these setting, structures with L=6 for θt=63°, and L=5 for θt=72° and 81° are found. For example, to refract the normally incident plane into the direction with θt=72°, the depth of the grooves ) ( u d d 1 d- ) ( u d 5 need to be [0.178(0.123), 0.203(0.017), 0.180(0.000), 0.220(0.000), 0.032(0.288)]λ, respectively. Structural parameters of the structure for θt=63° and 81° are listed in Tab. S1 in the supplementary material. To verify the quality and efficiency of the obtained structures, full wave simulation based on the Comsol Multiphysics is performed. Here we evaluate the quality by the value I1y/Ity, and evaluate the efficiency by I1y/Iiy, where I1y, Ity and Iiy means respectively the intensity of the +1st diffraction, the total transmission and the incident wave. We show in Fig. 2 the real part of the scattering pressure field, where Fig 2(A), (B) and (C) are for the structures with θt=63°, 72° and 81°, respectively. For clear eyesight, the field of the normal incident wave is not shown. From the simulation, the efficiency for Fig.2(A)-(C) is obtained as 95.6%, 98.6% and 95.4%, respectively, which are closer to the ones obtained by the numerical calculation. To see the quality of the transmitted wave, we perform a Fast Fourier Transformation of the field along the cut line away from the lower surface 4a. The results show that there are only tiny kinks at kx/(k0 sinθt )=0 and -1, which means the power flow is almost completely in the desired direction for all three structures (see the details in the supplemented material). We have also checked the amplitudes of the pressure field in the grooves, and found that the maximum value in all grooves is less than 10 times of the incident one, which means there is no strong resonance in the structure. All these results show that the perfect metasurfaces with only a single meta-atom per period are obtained. Power flow redistribution along the surfaces caused by the evanescent mode Because there is only one channel per period in the structure, there should be strong evanescent modes along the surfaces, by which the power flow is squeezed into the channel in the input side and then is spread out with suitable phase delay along the surface in the output side. To see this effect, we choose to calculate the local intensity distribution of the field shown in Fig. 2(B), which is for the structure with θt=72°. From the field by the finite element simulation, we calculate the local intensity vector I=(Ix,Iy), where Ii (i=x, y) can be obtained by the formula I i =× 1 Re 2 é ë ( p v i )* ù û with p as the local pressure value and (vi )* as the conjugation of the local velocity component in i-direction. Result in one period in x-direction and in a/2 away from the surfaces in y-direction is shown in Fig. 3(A). We can observe that the amplitude of local intensity is shown by the length of the arrow, and the direction of arrow gives the direction of the local intensity. It can be found from this figure that, the directions of the arrows are strongly distorted in the area very close to surface, showing the manner of how the power flow is squeezed into and spread out from the channel. However, as the distance away from the surfaces becomes larger, the distortion becomes smaller and finally gives a regular pattern (about a/2 away from the interfaces). Notice the fact that the regular pattern of arrows gives the power flow distribution of the incident or the desired refractive plane waves in far field (y>a/2), while the distortion near the interfaces means exactly the lateral energy exchanging caused by the surface evanescent mode. The figure shows a new manner of how the power flow can pass through the structure, which is quite different from the one in the structures constructed by the discretizing and matching procedure. In the latter, the idea is to discretize and implement the surface with as many as possible meta-atoms (or say, channels) per period, because it is admitted that the power conservation condition should be locally satisfied along the whole surface. Here, we show that the power flow can pass through the metasurface by a completely different way. This means the local power conservation should be an over-requested condition in the previous metasurfaces designing (the phase-gradient and bi-anisotropic approaches), and should be one of the causes for the complexity of the structure. To show more details about the effect of the evanescent mode, we plot in Fig. 3(B) and (C) respectively the Iy value as the function of x in the upper and lower half-infinite mediums at different δy. Here δy means the distance away from the upper or lower interfaces. Results for δy=0, 0.05a, 0.1a, 0.5a and a are shown by different colors in the figures. To guide the eyesight, the position of the channel and grooves is also marked by green and blue rectangles, respectively. It can be seen from the figure that the effect of the evanescent mode is limited in the region around δy <0.5a. For all these curves in this region, the Iy value keeps negative in the position where the channel is connected, but keeps dropping from positive to negative in the positions where the grooves are connected. This is understandable because power flow can only pass through the structure from the channel, and the effect of the grooves is only to laterally transfer the power flow along the surface. From these two figures, we can confirm further that the local power conservation condition for is unnecessary. Experiment verification To verify the numerical result, we select the structure with θt =72° for the experimental demonstration. The schematic representation of the experimental setup is shown in Fig. 4(A). In experiment, we choose the air as working medium and the working frequency as f=8200Hz (λ=42.88mm and a=45.08mm). Under this frequency, the width of the channel is 4.5mm, and the width of the grooves and walls are 5.4mm and 2.3mm, respectively. This means that the additional effects of friction and wall deformation caused by the narrow channel and thin wall can be neglected. This frequency is much higher than the one (usually about 3000Hz) used for structures suggested in previous literature. We point out that, because narrow channels and thin walls (compared to the working wavelength) have to be used in the structures suggested in previous works, it is very difficult to push their working frequency into the region as high as 8200Hz. We show in Figure 4(B) the real part of the pressure field distribution of the structure. The upper panel presents the simulated results and the lower panel presents the corresponding experimental one measured in the areas marked by red boxes in the upper panel. A good agreement between the simulation and experimental results is obtained. Notice that only the field below the metasurface is shown. Discussion In conclusion, we have developed a half-analytic method to solve the diffraction problem for a periodic sound- hard planar layer with channel and surface-etched grooves. By combining this method with an optimization algorithm, acoustic refractive metasurface which can refract the incident wave into desired directions can be designed. As demonstration, refractive metasurfaces with refractive angles θt =63°, 72° and 81° for normally incident plane wave were designed. The predicted structures were investigated by the finite-element simulation and experiment, which provide a proof-of-concept of the designed transmitting metasurface. In contrast with the traditional refractive metasurface which are usually composed of many subwavelength meta-atoms, the structure designed by our method has only a single meta-atom per period. By this structure, we have found that the local power conservation condition along the surface-normal direction, which is considered as the basic requirement in the previous traditional designs, is in fact an over-requested condition which increases the complexity in metasurface design. Because the near field interaction between subunits exists in almost all of the subwavelength structure, the presented idea and developed method will be helpful for other metasurface designs and functionalities. Materials and Methods Numerical simulation The full wave simulations based on finite element analysis are performed using COMSOL Multiphysics Pressure Acoustics module. For Fig.2, plane wave along -- y direction is chosen as incident wave. The Perfectly Matched Layers (PML) with thickness 2a are added at the top regions (not shown in the figure) to reduce the reflection on the boundaries. Floquet periodic boundary condition is added on the left and right boundaries. For the upper panels of Fig. 4(B), the equal-amplitude beam with finite width in x direction is chosen as incident wave. The plane wave radiation boundary condition on the top, left and right boundaries are used. Experimental apparatus The samples with 20 periods are fabricated using the stereo lithography apparatus (SLA) with photosensitive resin. The molding thickness of each layer during printing is 0.1mm. Organic Glass plates are added on the top and bottom of the samples (height is 15mm) to form a two-dimensional wave guide for measurement. Foams are distributed on sides of the waveguide to absorb sound wave with frequency above 3000Hz. Transducer array includes 22 loudspeakers (1-inch, Hivi B1S) , which can produce continuous sound wave from 6.4kHz to 9.6kHz, is placed 150mm away from the sample as the beam source. The amplitude and phase shift, are measured with Brüel & Kjaer Data Acquisition Hardware (LAN-XI, type 3160-A-042) and 1/8-inch microphone controlled by the two-dimensional sweeping field platform with a step of 5mm (about λ/8) . References 1. B. Assouar, B. Liang, Y. Wu, Y. Li, J.-C. Cheng, Y. Jing, Acoustic metasurfaces. Nat.Rev. Mater. 3, 460-472 (2018)10.1038/s41578-018-0061-4). A. Díaz-Rubio, S. A. Tretyakov, Acoustic metasurfaces for scattering-free anomalous reflection and refraction. Phys. Rev. B 96, 125409 (2017)10.1103/PhysRevB.96.125409). J. Li, C. Shen, A. 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Epstein, in 2018 12th International Congress on Artificial Materials for Novel Wave Phenomena. (2018), pp. 113-115. L. Quan, Y. Ra'di, D. L. Sounas, A. Alu, Maximum Willis Coupling in Acoustic Scatterers. Phys. Rev. Lett. 120, 254301 (2018); published online EpubJun (10.1103/PhysRevLett.120.254301). Control. Phys. Front Rev. Lett. 119, Acknowledgments This work was supported by the National Natural Science Foundation of China (Grant Nos. 11274121, 11704284 and 11774265), the Young Elite Scientists Sponsorship by CAST (Grant No. 2018QNRC001), the Shanghai Science and Technology Committee (Grant No. 18JC1410900), the Shanghai Pujiang Program (Grant No. 17PJ1409000), and the Stable Supporting Fund of Acoustic Science and Technology Laboratory. Fig. 1. Schematic illustration of the investigated structure. Schematic illustration of the investigated structure. (A) three dimensional view and (B) detail structure of two periods in xy-cut plane. It is a planar period sound hard surface with one channel and L etched rectangular grooves (L=2 is shown in the figure) on both side of layer. The period along x-direction is a. The total thickness of the layer is h, the width of the channel is tc; the width of all of the grooves are set to be the same and denoted as t, the depth of the grooves on ) ( u d ld , (l=1,2,…, L), and the distance between nearest grooves is set to be equal and denoted as w. Because of the periodicity of the structure, an incident wave from the negative y-direction the upper (lower) surface are will be diffracted as 0th, 1st ,⋯, order diffractive components. Fig.2 Field distribution of the scattering wave. Real part of the pressure field distribution (within the area 0<x<a and y<4a) of the refractive and reflective wave from the structure. The normally incident plane wave is marked only by the white arrows, the field of them are not shown for clear eyesight. (A), (B) and (C) are for the structures with refractive angles as θt=63°, 72° and 81°, respectively. Fig. 3. Local intensity of the field. (A) Local intensity vector distribution for the total field of the structure with θt =72°. The incident plane wave is from -- y direction. (B) and (C) gives the power flow along the +y and -- y directions at different distances (δy) away from the upper or lower interfaces, respectively. Fig. 4 Experimental setup and the measured scattering field. (A) Schematic representation of the experimental setup. (B) Pressure wave distribution of the refractive wave from the structure for θt=72°. The structures contains totally 20 periods. The upper panel is the result simulated by finite element method, and the lower panel is the measured data in the areas marked by the red box in the corresponding upper panel. The white arrows show the directions of the transmitted wave.
1807.10368	1	1807	2018-07-26T21:14:24	Origami-inspired Cellular Metamaterial with Anisotropic Multi-stability	[ "physics.app-ph" ]	Origami designs offer extreme reconfigurability due to hinge rotation and facet deformation. This can be exploited to make lightweight metamaterials with controlled deployability and tunable properties. Here, we create a family of origami-inspired cellular metamaterials which can be programmed to have various stability characteristics and mechanical responses in three independent orthogonal directions. The cellular metamaterials were constructed from their origami unit cell that can have one or two admissible closed-loop configurations. The presence of the second closed-loop configuration leads to the emergence of bi-stability in the cellular metamaterial. We show that the stability and reconfigurability of the origami unit cell, and thus the constructed cellular metamaterials, can be programmed by manipulating the characteristic angles inherited from the origami pattern. Two examples of such programmable metamaterial with bi-stability in out-of-plane direction and anisotropic multi-stability in orthogonal directions are presented. Our study provides a platform to design programmable three-dimensional metamaterials significantly broadening the application envelope of origami.	physics.app-ph	physics	Origami-inspired Cellular Metamaterial with Anisotropic Multi-stability Soroush Kamrava,a Ranajay Ghosh,b Zhihao Wang, a and Ashkan Vaziri a,* a Department of Mechanical and Industrial Engineering, Northeastern University, Boston, MA 02115, USA b Department of Mechanical and Aerospace Engineering University of Central Florida, Orlando, FL 32816, USA Corresponding Author: [email protected] Abstract: Origami designs offer extreme reconfigurability due to hinge rotation and facet deformation. This can be exploited to make lightweight metamaterials with controlled deployability and tunable properties. Here, we create a family of origami-inspired cellular metamaterials which can be programmed to have various stability characteristics and mechanical responses in three independent orthogonal directions. The cellular metamaterials were constructed from their origami unit cell that can have one or two admissible closed-loop configurations. The presence of the second closed-loop configuration leads to the emergence of bi-stability in the cellular metamaterial. We show that the stability and reconfigurability of the origami unit cell, and thus the constructed cellular metamaterials, can be programmed by manipulating the characteristic angles inherited from the origami pattern. Two examples of such programmable metamaterial with bi-stability in out-of-plane direction and anisotropic multi-stability in orthogonal directions are presented. Our study provides a platform to design programmable three-dimensional metamaterials significantly broadening the application envelope of origami. Introduction: Geometry induced instabilities are ubiquitous in nature due to their importance in influencing large changes in mechanical response and adding extra functionality to the structure. Examples include the closure of Venus flytrap plant [1], trapping mechanism of the bladderworts [2], buckling of drying colloidal droplets [3], and osmotically shrinking polymeric capsules [4]. Including instability in a materials design can similarly lead to added functionality and rapid shape change. In this context, using origami structures to harness instability is an exciting new area of research. Twisted origami square [5], cylindrical origami with Kresling and Miura-ori pattern [6, 7], and rigid-foldable cellular structures with special hinge characteristics [8] are some examples of origami-inspired structures capable of exhibiting instability. More generally, over the past few decades, origami has truly evolved from an ancient Japanese art of paper folding into a rich scientific field bridging different disciplines [9]. However, in spite of the unlimited 1 origami configurations possible, at a very fundamental level origami can be classified into two broad categories - rigid-foldable and deformable origami [10]. In the rigid-foldable origami, facets remain flat and the only source of deformation is rotation about the creases [11-14]. The assumption of rigid facets with zero thickness in the rigid-foldable origami causes the kinematics of origami to solely depend on the fold pattern and be independent of material and hinge properties [12, 15, 16]. These simplifications lead to straightforward correlations between the fold pattern and kinematics of origami folding [9, 14]. This very simplification also results in an inherently limited envelope of performance since for many applications, more degrees of reconfigurability may be desirable. This limitation can be overcome if more flexible facets are used resulting in deformable origami structures [16] which opens up new possibilities to develop bi-stable origami structures [5, 17]. Here, we propose a family of origami-inspired load bearing cellular structures with anisotropic programmable multi-stability. The multi-stability of the cellular structure originates from the bi-stability of individual deformable origami unit cells. Each unit cell structure is built by folding a Miura-ori strin g [18], which is a sequence of 𝑛 individual Miura-ori as shown in Figure 1(A), to make a closed-loop configuration. Crease pattern of the Miura-ori string is defined by number of Miura-ori in the string (𝑛), two repeating characteristic angles of 𝛼1 and 𝛼2 (𝛼1 > 𝛼2) and the dimensions of 𝑎 and 𝐻, shown in Figure 1(A). Angle 𝜃 is the dihedral angle between plates in flat and folded configurations, which varies from 0° to 90° and represents the level of folding. The Miura-ori string shown in this figure has 𝛼1 = 77° and 𝛼2 = 42° and folds from the flat configuration at 𝜃 = 0° and goes through a rigid foldable regime until it makes a closed-loop configuration at 𝜃 = 16°. We investigate the formation of the closed-loop configuration for any arbitrary Miura-ori string with rigid facets based on two criteria. First, from the plane geometry of polygons, all closed-loop configurations should satisfy the internal angle condition 𝜂1 + 𝜂2 = 𝜋(2 − 2 𝑛⁄ ), where 𝜂1 and 𝜂2 are the internal angles formed between longitudinal creases and shown in Figure 1(B) and 𝑛 is number of Miura-ori in the string (See Supporting Information for more details). The 2 Figure 1. A) Folding an origami string consisted of five identical Miura-ori with characteristic angles of 𝛼1 and 𝛼2. The string folds from the flat configuration (𝜃 = 0°) to a closed-loop star-shaped configuration at 𝜃 = 16°. B) The longitudinal creases of the closed-loop configurations that form internal angles of 𝜂1 and 𝜂2. C) Design map for stability analysis of star-shaped structures with different 𝛼1 and 𝛼2 angles. Blue, yellow, and red areas correspond to single-stable, semi-bi-stable, and bi-stable units, respectively. D) Numerically determined elastic strain energy versus applied compressive out-of-plane displacement for three different star-shaped structures denoted by 𝐴 (𝛼1 = 77°, 𝛼2 = 42°), 𝐵 (𝛼1 = 77°, 𝛼2 = 40°), and 𝐶 (𝛼1 = 75°, 𝛼2 = 30°) showing the behavior of bi- stable, semi-bi-stable, and single-stable units, respectively. The distribution of strain energy density in each structure is shown at different compressive displacements. E) A 3D printed 𝑛 = 5 origami string with 𝛼1 = 77° and 𝛼2 = 42° in the flat configuration which folds in to a five-pointed star- shaped structure. The resulting star-shaped structure is bi-stable with two stable configurations as shown. The structure can reversibly transform from configuration to another by applying a compressive/tensile loading. (F) Experimentally obtained load-displacement response of 3D printed samples 𝐴, 𝐵, and 𝐶. 3 values of 𝜂1 and 𝜂2 at different folding levels are determined based on the governing equations of Miura- ori fold [8]: 𝜂1 = 𝜋 − 2𝑐𝑜𝑠−1( cos 𝛼1 √1 − 𝑐𝑜𝑠2𝜃𝑠𝑖𝑛2𝛼1 ) (1) 𝜂2 = 𝜋 + 2𝑐𝑜𝑠−1( cos 𝛼2 ) √1 − 𝑐𝑜𝑠2𝜃𝑠𝑖𝑛2𝛼2 Substituting Equation 1 into 𝜂1 + 𝜂2 = 𝜋(2 − 2 𝑛⁄ ) results in a trigonometric equation, which can be simplified to Equation 2. 𝐴𝑐𝑜𝑠4𝜃 + 𝐵𝑐𝑜𝑠2𝜃 + 𝐶 = 0 𝐴 = 𝑠𝑖𝑛2𝛼1𝑠𝑖𝑛2𝛼2 𝐵 = 𝑠𝑖𝑛2(𝛼1−𝛼2) 𝑠𝑖𝑛2(𝜋 𝑛⁄ ) − (𝑠𝑖𝑛2𝛼1 + 𝑠𝑖𝑛2𝛼2) 𝐶 = 1 − 𝑠𝑖𝑛2(𝛼1−𝛼2) 𝑠𝑖𝑛2(𝜋 𝑛⁄ ) (2) Solving Equation 2 gives us the values of 𝜃 in which a Miura-ori string described with 𝛼1, 𝛼2 and 𝑛 would make a closed-loop: 𝜃1 = 𝑐𝑜𝑠−1 (√−𝐵 + √𝐵2 − 4𝐴𝐶 2𝐴 ) , 𝜃2 = 𝑐𝑜𝑠−1 (√−𝐵 − √𝐵2 − 4𝐴𝐶 2𝐴 ) (3) Note that in general Equation 2 will have four roots. However, if we restrict our angles to 0° < 𝜃 < 900, the two negative possibilities are eliminated. This ensures that for all practical purposes, only two possible type of solutions can emerge from Equation 3. Thus, any arbitrary Miura-ori string could have either zero, one or two closed-loop configurations which correspond to 𝜃1 and 𝜃2 both imaginary, one imaginary and one real and both real numbers, respectively. The second criterion requires two ends of Miura-ori string to meet each other at the closed-loop configurations which can be mathematically written as the summation condition ∑ 𝑙𝑖⃗⃗ 𝑖=1 = 0 where 𝑙𝑖⃗⃗ is the 𝑖𝑡ℎ middle crease vector shown in Figure 1(B) [19, 20]. 2𝑛 4 Note that these possible configurations, which do not lead to facet bending, can be called zero energy configuration if hinge stiffness is neglected. These possible configurations can be plotted on a phase map. Such a phase map is shown in Figure 1(C) for Miura-ori strings with 𝑛 = 5 and 𝛼1 and 𝛼2 ranging from 0° to 90°. This phase map is symmetric with respect to the 𝛼1 = 𝛼2 line, which is expected from the geometry of the Miura-ori string. The white region is a forbidden zone where the given 𝛼1 and 𝛼2 would not lead to loop closure. The single solution configuration (i.e. unique loop configuration) is shown by the blue region and is called single-stability case. On the other hand, the red regions correspond to the folding pattern, which gives rise to two possible closed-loop solution and resulting in a bi-stable unit. However, although the single stable case is predicated on only one possible stable configuration there is a scenario that can yield another point of structural stability. We hypothesize that in this case, the second stable point will partially share the characteristic of the bi-stable case. In general, as soon as the origami is subjected to out-of-plane load, facet bending will make rigid origami conditions inapplicable. These would mean that both the internal angle and closed loop criteria will no longer be true. In other words, ∑𝑙𝑖⃗⃗ > 0 and 𝜂1 + 𝜂2 − 𝜋(2 − 2 𝑛⁄ ) > 0. For a single stable unit this constraint will never be satisfied again. However, for the bi-stable unit this will be satisfied again at the second zero energy state. In other words, after an initial increase in ∑𝑙𝑖⃗⃗ and 𝜂1 + 𝜂2 − 𝜋(2 − 2 𝑛⁄ ) they will begin to decrease. Hence, for another stable point to exist at a subsequent point, 𝑑∑𝑙𝑖⃗⃗ /𝑑𝜃 < 0 and 𝑑𝜂1 + 𝜂2 − 𝜋(2 − 2 𝑛⁄ )/𝑑𝜃 < 0. Whereas, for the bi-stable case, this will eventually lead to the zero strain energy minima, for the single stable case this manifests as the structure tries to return towards the zero-energy state. However, since it has only one possible stable configuration, the origami will stop in its track. Physically this would correspond to the configuration which leads to facet contact causing a sudden increase in stiffness of the structure after this point. We impose these restrictions on the single stable origami and find the emergence of another region called the semi-bistable region. This region is shown in yellow in Figure 1(C). 5 These arguments can be more readily seen through the strain energy landscape. We use finite element (FE) simulations on three origami samples 𝐴, 𝐵 and 𝐶 from the red, yellow, and blue regions using a commercially available FE code ABAQUS (Dassault Systemes). These origami units were modeled as a set of flat plates connecting to each other by ideal hinges with zero stiffness and zero friction to eliminate the effect of materials and merely investigate the geometry of units. Our simulations resulted in strain energy vs. out-of-plane displacement plots in Figure 1(D). For the single-stability case (sample 𝐶), the strain energy will continue to monotonically increase with load, as shown in Figure 1(D) using a blue line. For the bi-stable case (Sample 𝐴), an energy minimum is achieved once again with deformation at a later stage of folding level, as shown by the red line in Figure 1(D). The energy plot now reveals more clearly the nature of the second stability point for the semi-bi-stable case (sample 𝐵), shown using a yellow line. In this case a clear energy maximum is visible followed by a decline which would correspond to the negative derivative condition. But the decline is arrested by the face contact (the region after the face contact would be a very high energy state dictated by the contact configurations). Note that for this case, the deformation abruptly stops at the displacement of 24 𝑚𝑚 which corresponds to the contact between the facets. This strain energy configuration is not a global energy minimum (excluded from our mathematical relations) although it has lower energy than the neighboring configuration. The inset figures in Figure 1(D) show strain energy distribution in units 𝐴 and 𝐵 at the maximum and minimum levels of strain energy rather than initial configuration and also an arbitrary configuration of unit C. These curves can also be used to infer stiffness of the structures from the second derivative. Clearly, unit 𝐶 will not show any decrease in stiffness as its strain energy is monotonic with displacement. Unit 𝐴 and 𝐵 show clear inflections on their way between their stable configurations. Therefore, we can expect these structures to show an initial increase in stiffness, then decrease till they reach their second stable configuration. We can correlate these predictions using experiments. To this end we devise compression test on fabricated units corresponding to the geometry of 𝐴, 𝐵 and 𝐶 units described above. Fabrication of origami structure 6 has been done in many ways in literature such as traditional paper folding [21] and using laser-cutting [22]. However, the elasticity of creases in these fabrication methods causes the deviation of real origami structures from the expected theoretical behavior. For example, the fabricated origami bellows failed to exhibit bi-stability, although their bi-stability is confirmed theoretically [19]. Here, we used 3D printed revolute hinges with zero energy at any angle to closely align with the assumption of zero-energy hinges in the theoretical and numerical modeling. All facets were fabricated using PolyJet 3D printing technique and connected to each other with brass pins allowing them to rotate freely (revolute hinge). Figure 1(E) shows a 3D printed sample of unit A (𝛼1 = 77° and 𝛼2 = 42°). Revolute hinges at both ends enable it to make a permanent closed-loop star-shaped unit. Also, both stable closed-loop configurations of this sample at 𝜃1 = 16° and 𝜃2 = 70° are shown in the figure. See the Supporting Movie for the transition of the structure between two stable configurations. The force-displacement curve of all three 3D printed 𝐴, 𝐵, and 𝐶 units under the out-of-plane compression test is measured using a ADMET testing machine positioned horizontally to eliminate the effect of structure weight. A picture of unit 𝐴 during the out-of- plane compression test is shown in Figure 1(E). The force-displacement curve of units 𝐴, 𝐵, and 𝐶 are plotted in Figure 1(F). The force-displacement response of units 𝐴 and 𝐵 follow a positive, negative, and positive stiffness pattern and reaches the zero force at three distinct equilibrium configurations. These equilibria can be stable or unstable if they correspond to positive or negative force-displacement slope, respectively [23]. Hence, the first and third equilibriums are stable configurations which confirm the bi- stability of units 𝐴 and 𝐵. Also, force-displacement response of unit 𝐶 shows only one stable equilibrium configuration at the zero displacement. The results presented in Equations 2 and 3 were demonstrated for a string with five embedded Miura-ori which folds to a five-pointed star-shaped unit. However, these results can be used for all strings with 𝑛 Miura-ori which fold to make a 𝑛-pointed star-shaped unit. Figure 2(A) shows the prototypes of various 𝑛-pointed star-shaped units with 𝑛 ranging from 3 (minimum possible) to 10. The computational design 7 Figure 2. A) 𝑛-pointed (3 ≤ 𝑛 ≤ 10) star-shaped units formed by folding origami strings with 𝑛 number of identical Miura-ori. B) Stability of 𝑛-pointed star-shaped units. The colored regions correspond to units with bi-stable and semi-bi-stable behaviors. C) Numerically obtained elastic strain energy versus applied out-of-plane compressive displacement for star-shaped units. D) Numerically determined force- displacement response of star-shaped units discussed in part C under out-of-plane compression. E) Strain energy density distribution for three star units with 𝑛 = 3, 𝑛 = 6 and 𝑛 = 10 at two zero-energy (stable) and one maximum energy configurations. F) Poisson's ratio of the star-shaped units discussed in part C as a function of out-of-plane displacement. maps of these stars are shown in Figure 2(B) in which the colored areas indicate the 𝛼1 and 𝛼2 values of the strings which would give rise to either a bi-stable or semi-bi-stable unit. As 𝑛 increases, the colored area moves toward the 𝛼1 = 𝛼2 line decreasing the possible multiple stability configuration. On the other extreme, when 𝑛 gets closer to three, the bi-stable region is possible in an increasingly thin slice of angles which restrict 𝛼1 to be near 90°. This angular configuration is near to the so called singular design point 8 for the Miura-ori pattern and makes the unit dramatically sensitive to the fabrication errors [18]. To further study the characteristics of different star-shaped units, we modeled the eight units shown in Figure 2(A) and performed an out-of-plane compression simulation where all units were bi-stable and required the same amount of out-of-plane displacement (∆𝑑) to go from the first to the second stable configuration given by (See the Supporting Information for more details about the design of these eight units) ∆𝑑 = 2𝐻 × √𝐵2 − 4𝐴𝐶 𝐴 , (4) where 𝐻 is defined in Figure 1 (A) and 𝐴, 𝐵 and 𝐶 can be determined using Equation 2. The strain energy and out-of-plane load vs. out-of-plane displacement of these eight units are plotted in Figure 2(C) and (D). The overall shape of the energy curves in Figure 2(C) does not change for different values of 𝑛 and all eight units retain the zero-energy level at both zero and 10.2 𝑚𝑚 displacements. However, the point corresponding to maximum energy for these curves depend on the 𝑛 value. The three-pointed and six- pointed star-shaped units have the smallest and largest strain energies among the eight simulated units, respectively. This is confirmed in the load-displacement curve plotted in Figure 2(D). Furthermore, Figure 2(E) shows the distribution of strain energy density of three-pointed, six-pointed and ten-pointed star- shaped units at two stable and one maximum energy configurations. The dark blue color in two stable configurations confirms the zero amount of stored energy and bi-stability of these units. The distribution of strain energy is not uniform and it is higher near the creases which reveals the necessity of using brass pins in that area which has higher strength than the 3D printed material. Another interesting property in the bi-stable star-shaped units is the auxeticity (or negative Poisson's ratio) which can add a wide range of functionality to the structure such as tunable bandgap[24] and tunable shape[25]. The second stable configuration is attained through an in-plane contraction from the first stable configuration so that the resultant cross-sectional area is less than the initial area. The poison's 9 ratio for unit is defined as 𝑑𝐷 𝑑𝑇⁄ , where 𝐷 and 𝑇 are diameter of the circumcircle and height of the star- shaped unit, respectively, and shown in the schematic of Figure 2(F). The Poisson's ratios of eight units discussed earlier (3 ≤ 𝑛 ≤ 10) are calculated numerically using FE simulation as a function of displacement and results are presented in Figure 2(F). All units have negative Poisson's ratio with decreasing absolute value as they deform toward the second stable configuration. Also, greater values of 𝑛 result in a larger absolute value of Poisson's ratio with 𝑛 = 10 exhibiting the most intense auxetic behavior among the simulated units. The unique properties of the proposed star-shaped units such as programming instability by changing the 𝛼1 and 𝛼2 angles, auxeticity and rotationally symmetric geometry make them a promising candidate to be used as building blocks of a cellular metamaterial (synthetic materials with nontraditional and extreme properties). The lattice of this type of cellular metamaterial could be made by tilling star-shaped units in 2D or 3D spaces. Figures 3(A) and (B) show two examples of such metamaterials made from four-pointed and eight-pointed star-shaped units. The cellular metamaterial shown in Figure 3(A) is consisted of 27 units with 𝛼1 = 78.9°, 𝛼2 = 35.8°, 𝑎 = 20 𝑚𝑚 and 𝐻 = 12 𝑚𝑚. Individual unit cells have two stable configurations at 𝜃1 = 18° and 𝜃2 = 62°, determined from Equation 3, and switching between these two stable points causes reconfiguration of the unit cells. This reconfigurability gets transferred to the entire structure and creates two corresponding stable configurations at 𝜃1 = 18° and 𝜃2 = 62° in the lattice, see Figure 3(A) and the Supporting Movie for more details on this structure. This type of topologically dictated extreme behavior is hallmark of metamaterials [26-28]. Similarly, another metamaterial made by tiling four eight-pointed star-shaped units with 𝛼1 = 72°, 𝛼2 = 51°, 𝑎 = 20 𝑚𝑚 and 𝐻 = 15 𝑚𝑚 is shown in Figure 3(B). Both metamaterial and individual cells retain two stable configurations at 𝜃1 = 18° and 𝜃2 = 60°. The top views of metamaterial at two stable configurations are shown in Figure 3(B). To characterize the reconfigurability of these metamaterials, we study the variations of cross-sectional area and internal volume as factors indicating the intensity of reconfiguration in two-dimensions and three- 10 Figure 3. A) Isometric view of a 3 × 3 × 3 cellular structure with four-pointed star-shaped unit cells. Top view of two stable configurations are shown on the right. B) A 2 × 2 × 1 cellular structure with eight- pointed star unit cells. Top view of two zero-energy configurations (unfolded and folded) are shown on the right. C, D) Normalized cross-sectional area and normalized volume vs. out-of-plane displacement for two structures presented in part A and B. E, F) The shrinkage ratio of the lattices shown in parts A and B as a function of 𝛼1 and 𝛼2 angles. dimensions, respectively. The cross-sectional area is the area of the smallest rectangle which can cover the top or bottom surface of the metamaterial and the internal volume is the volume of the smallest cuboid which fits the metamaterial interior. Figure 3(C) and (D) show the variation of the cross-sectional area and the internal volume of metamaterials presented in Figure 3(A) and (B) as a function of out-of- plane displacement. The auxeticity of individual unit cells causes a decreasing rate in the area and volume 11 such that the second stable configuration occupies smaller cross-sectional area and internal volume than the first stable configuration. As shown in the schematics and curves of Figure 3(C) and (D), the cross- sectional area and internal volume of metamaterial with eight-pointed stars decrease at a higher rate than the metamaterial with four-pointed stars. This reveals the effect of unit cells type on the reconfigurability of the metamaterial. Another factor affecting the reconfigurability of the metamaterial is the 𝛼1 and 𝛼2 angles which define the properties of underlying star-shaped unit cells. The metamaterials are reconfigurable only in certain range of 𝛼1 and 𝛼2 as discussed earlier in the context of Figure 1(C). These ranges are shown in Figures 3(E) and (F) for two previously introduced metamaterials and quantified in terms of shrinkage ratio is defined as the positive ratio of change in dimension 𝐿 (shown in subfigure) to the out-of-plane displacement between the first and second stable configurations. The color contours of Figures 3(E) and (F) show the variation of shrinkage ratio with respect to 𝛼1 and 𝛼2 for the metamaterials shown in Figure 3(A) and (B), respectively. As 𝛼1 and 𝛼2 go toward 90°, shrinkage ratios go to zero and result in a structure which has two similar stable configurations but decreasing the values of 𝛼1 and 𝛼2, while they are still inside the colored area, causes more distinct stable configurations and maximize the reconfigurability of the structure. The introduced star-shaped units can also be positioned in other ways to tailor the behavior of the metamaterial by introducing anisotropy (different response along different loading axes) and multi- stability. Figure 4(A) shows this novel metamaterial which is constructed from six four-pointed star- shaped units arranged to form a cuboid. Figure 4(A) also shows three configurations of the metamaterial, achieved by harnessing bi-stability of star units in each direction. The resulting metamaterial has zero effective Poisson's ratio in three orthogonal directions and multiple stable configurations that enable controlled reconfiguration in each 𝑥, 𝑦, and 𝑧 directions independent of other two orthogonal directions. The proposed metamaterial can be scaled in three directions and to any desired size by adding extra unit cells. Increasing the size of metamaterials significantly increases the number of design parameters, 12 Figure 4. A) A cubic metamaterial which has multiple stable configurations as shown in the figure and constructed from six four-pointed star-shaped units positioned along three orthogonal directions. The metamaterial is anisotropic and can be programmed to have a desired response in each orthogonal direction by manipulating 𝛼1 and 𝛼2 angles of each star unit. B) Scaling the metamaterial by packing eight of them in a 2 × 2 × 2 network. The resultant structure is multi-stable, anisotropic and has 15 independent design parameters in each orthogonal direction. C) Compressive load vs. displacement obtained from horizontal testing in 𝑋, 𝑌, and 𝑍 directions. The 2 × 2 × 2 metamaterial is programmed to have stiffening multi-stability, monotonic multi-stability, and single-stability in compression along the 𝑋, 𝑌, and 𝑍 directions resulting in a wide range of properties. This terminology is congruent with the results presented for star units where their properties are function of 𝛼1 and 𝛼2 characteristics angles, and these angles can be changed to tune the properties of the 3D metamaterial. Scalability of the proposed 3D metamaterial improves the design possibilities and response tunability. Figure 4(B) shows a metamaterial with 12 star- shaped units in each direction (36 totally) connected to neighboring units using revolute hinges. This metamaterial has 15 independent design parameters in each orthogonal direction, which can be used for programming the mechanical behavior of metamaterial in that direction. In general, having 𝑛1, 𝑛2 𝑎𝑛𝑑 𝑛3 star-shaped units in series along the orthogonal directions provides 3(𝑛1𝑛2𝑛3) − 2(𝑛1𝑛2 + 𝑛2𝑛3 + 𝑛1𝑛3) + 2(𝑛1 + 𝑛2 + 𝑛3) independent design parameters. The metamaterial shown in Figure 4(B) is programmed to have three different behaviors of; 1) stiffening multi-stability in which the required force for transition between consecutive stable configurations increases gradually, 2) monotonic multi-stability 13 with constant required force for transition between consecutive stable configurations, and 3) single- stability with only one stable configuration in compression along the 𝑥, 𝑦, and 𝑧 directions. To do so, we have placed three different types of bi-stable star-shaped units along the 𝑋 axis, one type of bi-stable star- shaped unit along the 𝑌 axis, and one type of single-stable star-shaped unit along the 𝑍 axis. The horizontal compression test has been performed using an ADMET testing machine along all three orthogonal directions of the metamaterials and the obtained load-displacement results are shown in Figure 4(C). The metamaterial exhibits multiple local minima along the 𝑋 direction (markers on the curve) in which removing force will result in the stable configuration. Also, as expected, an increasing peak values can be observed (3.0, 4.1, 5.8 𝑁). A similar response can be obtained from the compression testing along the 𝑌 direction while the peak values are identical and equal to 11.8 𝑁 (9% tolerance due to the error in fabrication process). The compression test in the Z direction shows an almost linear response with no stable configuration other than the initial point. In conclusion, we introduced a novel family of origami-based structure fabricated by the folding a Miura- ori string. Our analytical investigation showed that by manipulating values of 𝛼1, 𝛼2 angles and number of Miura-ori (𝑛) in the string one can create three distinct stability regimes - single-stability, bi-stability and semi-bi-stability. The experimental out-of-plane compression test on 3D printed prototypes as well as the FE simulation for different unit geometries confirm the analytical results and reveal the potential of star-shaped units to serve as building blocks of a metamaterial with programmable stability, reconfigurability, and anisotropy. This type of inherently lightweight and readily manufactured structure can have potentially transformative impact on a number of modern high performance industrial, medical, military and aerospace systems. 14 Acknowledgement This work is supported by the United States National Science Foundation, Division of Civil, Mechanical, and Manufacturing Innovation, Grant No.1634560. References 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. Forterre, Y., et al., How the Venus flytrap snaps. Nature, 2005. 433(7024): p. 421-425. Vincent, O., et al., Ultra-fast underwater suction traps. Proceedings of the Royal Society B: Biological Sciences, 2011. 278(1720): p. 2909-2914. Tsapis, N., et al., Onset of Buckling in Drying Droplets of Colloidal Suspensions. Physical Review Letters, 2005. 94(1): p. 018302. Datta, S.S., et al., Delayed Buckling and Guided Folding of Inhomogeneous Capsules. Physical Review Letters, 2012. 109(13): p. 134302. 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Supplementary Information Origami-inspired Cellular Metamaterial with Anisotropic Multi-stability Soroush Kamrava,a Ranajay Ghosh,b Zhihao Wang, a and Ashkan Vaziri a, a Department of Mechanical and Industrial Engineering, Northeastern University, Boston, MA 02115, USA b Department of Mechanical and Aerospace Engineering University of Central Florida, Orlando, FL 32816, USA Corresponding Author: [email protected] The configurations for the three different stability behaviors: single-stability, bi-stability and semi-bi-stability has been found through two criteria in the manuscript. The first criterion is 𝜂1 + 𝜂2 = 𝜋(2 − 2 𝑛⁄ ) where 𝜂1 and 𝜂2 are interior angles of the star and shown in the Figure 1(B) as well as the Figure 1s. The second criterion is ∑ 𝑙𝑖⃗⃗ 𝑛 𝑖=1 = 0 representing the sum of middle crease vectors equating to zero. For deriving the equation for the first criterion, we sketch a 𝑛- pointed regular star (here 𝑛 = 5) and connect the sharp ends using Figure 1s. Connecting sharp ends in the 5-pointed stars to form a convex polygon. dashed lines, as shown in Figure 1S. These dashed lines form a convex five-sided polygon. The sum of its interior angles is given by (𝑛 − 2)𝜋. Using angles 𝜂1, 𝜂2 and 𝜂3 shown in the Figure 1s, we can rewrite the sum of interior angles in form of the following equation, 𝑛 × ( 𝜂1 + 2 𝜂3) = (𝑛 − 2) × 𝜋. Also, interior angles of 𝜂3, 𝜂3 and 2𝜋 − 𝜂2 form a triangles and add up to 𝜋, 2𝜂3 + 2𝜋 − 𝜂2 = 𝜋 (1s) (2s) Determining 𝜂3 from Equation 2s and plugging into the Equation 1s results in the following relationship between 𝜂1 and 𝜂2 (interior angles) for any 𝑛-pointed axisymmetric star 1 𝜂1 + 𝜂2 = 𝜋(2 − 2 𝑛⁄ ), which is the first criterion used in the paper. (S3) Eight different bi-stable samples in form of 𝑛-pointed star-shaped units (𝑛 = 3, 4 … , 10) has been shown and studied in the Figure 2. These bi-stable units should be designed to require identical out-of-plane displacement for the transition from the first stable configuration to the second one. This similarity between the units enables us to consistently compare the bi-stability and geometrical behavior of units under the out- of-plane compression. This similarity is guaranteed by having same 𝜃1 and 𝜃2 angles, which represent the folding level of the first and second stable configurations among all eight units. Table 1s shows the values of 𝛼1 and 𝛼2 and the resulting 𝜃1 and 𝜃2 stable angles for all eight units. Table 1s. Geometrical parameters and the stable configurations of eight samples shown in Figure 2. 𝑛 (number of end points in the star- shaped unit) 3 4 5 6 7 8 9 10 𝛼1 (degree) 𝛼2 (degree) 𝜃1 (degree) 𝜃2 (degree) 80 74.7 71.3 68.9 67.2 65.8 64.7 63.9 20.5 30.3 35.8 39.4 41.9 43.7 45.1 46.2 30.11 29.94 29.71 29.94 29.67 29.94 30.22 29.70 69.9 69.57 71.24 70.25 71.15 70.42 69.36 71.48 As shown in the Table 1s, values of 𝜃1 and 𝜃2 are approximately equal (2 % error) which enable us to fairly compare different aspects of these eight units. Supplementary movie is available upon request. 2
1810.13156	1	1810	2018-10-31T08:40:21	High aspect ratio silicon structures by Displacement Talbot lithography and Bosch etching	[ "physics.app-ph" ]	Despite the fact that the resolution of conventional contact/proximity lithography can reach feature sizes down to ~0.5-0.6 micrometers, the accurate control of the linewidth and uniformity becomes already very challenging for gratings with periods in the range of 1-2 {\mu}m. This is particularly relevant for the exposure of large areas and wafers thinner than 300{\mu}m. If the wafer or mask surface is not fully flat due to any kind of defects, such as bowing/warpage or remaining topography of the surface in case of overlay exposures, noticeable linewidth variations or complete failure of lithography step will occur. We utilized the newly developed Displacement Talbot lithography to pattern gratings with equal lines and spaces and periods in the range of 1.0 to 2.4 {\mu}m. The exposures in this lithography process do not require contact between the mask and the wafer, which makes it essentially insensitive to surface planarity and enables exposures with very high linewidth uniformity on thin and even slightly deformed wafers. We demonstrated pattern transfer of such exposures into Si substrates by reactive ion etching using the Bosch process. An etching depth of 30 {\mu}m or more for the whole range of periods was achieved, which corresponds to very high aspect ratios up to 60:1. The application of the fabricated gratings in phase contrast x-ray imaging is presented.	physics.app-ph	physics	High aspect ratio silicon structures by Displacement Talbot lithography and Bosch etching Konstantins Jefimovsa,b, Lucia Romanoa,b,c, Joan Vila-Comamalaa,b, Matias Kagiasa,b, Zhentian Wanga,b, Li Wangd, Christian Daisd, Harun Solakd, Marco Stampanonia,b aSwiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland; bInstitute for Biomedical Engineering, University and ETH Zürich, 8092 Zürich, Switzerland; cDepartment of Physics and CNR-IMM- University of Catania, 64 via S. Sofia, Catania, Italy; dEulitha AG, 5416 Kirchdorf, Switzerland [email protected] ABSTRACT Despite the fact that the resolution of conventional contact/proximity lithography can reach feature sizes down to ~0.5- 0.6 micrometers, the accurate control of the linewidth and uniformity becomes already very challenging for gratings with periods in the range of 1-2 µm. This is particularly relevant for the exposure of large areas and wafers thinner than 300 µm. If the wafer or mask surface is not fully flat due to any kind of defects, such as bowing/warpage or remaining topography of the surface in case of overlay exposures, noticeable linewidth variations or complete failure of lithography step will occur. We utilized the newly developed Displacement Talbot lithography to pattern gratings with equal lines and spaces and periods in the range of 1.0 to 2.4 µm. The exposures in this lithography process do not require contact between the mask and the wafer, which makes it essentially insensitive to surface planarity and enables exposures with very high linewidth uniformity on thin and even slightly deformed wafers. We demonstrated pattern transfer of such exposures into Si substrates by reactive ion etching using the Bosch process. An etching depth of 30 m or more for the whole range of periods was achieved, which corresponds to very high aspect ratios up to 60:1. The application of the fabricated gratings in phase contrast x-ray imaging is presented. Keywords: Displacement Talbot lithography, high aspect ratio, silicon etching, Bosch process, x-ray interferometry 1. INTRODUCTION Recent development of Displacement Talbot lithography (DTL) [1] proved that this method is very efficient for patterning periodic structures with features ranging from a few micrometers down to sub 100 nanometers. Periodic structures, such as linear gratings or two dimensional arrays of dots that have been printed with DTL, find their application as optical components for photonic crystals, anti-reflection structures, wire-grid polarizers, bio-sensor arrays, plasmonics, spectroscopy etc. While this technology excels in its capability to quickly and reliably print sub-micrometer arrays on a large scale below the resolution of a standard visible and UV lithography, it also shows clear advantages for some lower resolution applications (around one micrometer and above), for which conventional photolithography may also be used. Patterning in this range (1-2 micrometers) by photolithography requires a perfect contact between the mask and the substrate, which means bow and warp free substrates and absence of particles between the contacted surfaces. Yet, even in ideal conditions, the aspect ratio of the structures around one micrometer range becomes limited due to the light diffraction. In comparison, the DTL is essentially a contactless method with theoretically unlimited depth of focus, which solves all the issues mentioned above. Other techniques like steppers or interference lithography would also have such property. However, they would have difficulty with printing gratings without distortion or with exact pitch. An additional advantage of DTL is that it prints gratings with absolute control of pitch and grating phase, defined only by the mask like in case of contact photolithography. In this work, we demonstrate the potential of DTL technology for the fabrication of gratings for x-ray interferometry [2]. The challenge in x-ray gratings fabrication is twofold. On the one hand, the pitch of the gratings should be relatively small -- typically, a few micrometers or even in sub-micrometer range. On the other hand, the lines forming the gratings must have high aspect ratio to provide sufficient phase modulation or absorption of x-rays. We demonstrate the production of gratings with pitches from 1.0 to 2.4 µm exposed by DTL technology and etched into silicon by the Bosch process to depths of more than 30 m, which corresponds to aspect ratios up to 60:1. Phase gratings with a pitch of 1.3 m and a height of 24 m (providing -phase shift at 17 keV x-ray energy) were used to build a dual phase grating interferometer for x-ray imaging. Examples of the differential phase contrast and dark-field x-ray images are shown. 2. DISPLACEMENT TALBOT LITHOGRAPHY The Talbot effect is an interference based self-imaging phenomenon of a periodic structure (grating) illuminated by a monochromatic and collimated light beam. Self-images repeat at periodic intervals in the light propagation direction. For a linear grating and collimated light illumination, the Talbot self-images appear and repeat approximately with a Talbot period of 2p2/λ, where p is the grating period and λ is the light wavelength. In addition, Talbot sub-images (also called fractional Talbot images) are sometimes formed at distances corresponding to integer fractions of the Talbot period depending on the properties of the grating. An example of a simulated Talbot pattern is shown in Figure 1 (left). While with very accurate positioning between the mask and the substrate, such Talbot self-images have previously been used to print high resolution patterns [4, 5], the DTL method exploits the periodicity of the Talbot pattern along the light propagation direction. In DTL, the distance (or gap) between the mask and the substrate is changed by one or multiple Talbot periods during the exposure in such a way that average intensity is received by the photoresist, as depicted in Figure 1 (middle). As a result, a total dose profile as shown in the Figure 1 (right) is obtained. The displacement over a Talbot period leads to an exposed pattern independent of the absolute value of the gap between the mask and the substrate. Since no contact between the mask and the substrate is anymore required, the technique is compatible with the use of non-flat and thin substrates, as well as thick photoresists. Moreover, this method is much less sensitive to defects or contaminations on the surface of the resist. Depending on the grating specifications, different periodicities can be obtained in the resulting dose profile. The details of the principle of DTL have been published elsewhere [1, 6]. Figure 2 (top) shows the commercially available PhableR 100 system from Eulitha AG (Switzerland) capable of performing DTL exposures using phase-shifting and amplitude-type (Cr) masks with high uniformity over large areas. The standard system as used in this work can expose wafers up to 100 mm in diameter. Exposures typically take less than one minute depending on the resist sensitivity and mask type (i.e phase-shifting or amplitude). Cross-section and top-down images of various linear gratings with pitches ranging from 2.4 m down to 0.8 m are shown in Figure 2 (lower panels). The SEM images are taken after development of photoresist. Figure 1. A Talbot pattern formed in the vicinity of the mask (left), schematic presentation of the scanning of the substrate during the exposure (middle) and resulting dose profile obtained in the photoresist layer (right). Adapted with permission from Ref. [1]. Period 0.8 m Period 1.2 m Period 1.5 m Period 2.4 m Figure 2. A photograph of PhableR100 system from Eulitha AG (top) and SEM images of binary gratings with period ranging from 0.8 to 2.4 m exposed using PhableR100 system and after photoresist development. 3. GRATING FABRICATION In order to avoid loses due to absorption in the grating based x-rays interferometer setup, the substrates supporting the gratings should be as thin as possible. However, handling of very thin substrates is challenging due to their fragileness. As a compromise, we have chosen 4-inch double side polished silicon wafers with a thickness of 250 micrometers to fabricate the gratings in our case. After the DTL exposure step and the development of the photoresist layer, the gratings were etched into Si substrate as schematically shown in Figure 3. First, the pattern is transferred from photoresist into an underlying antireflective coating by reactive ion etching (RIE) in oxygen plasma. Then, the pattern is further transferred into a Cr hard etching mask by RIE in a Cl2 based process. After Cr etching the residuals of ARC and photoresist layers are removed by RIE in oxygen plasma. Finally, high aspect ratio structures are etched into the Si substrate using SF6/C4F8 based Bosch process [7]. The Bosch etching step was performed in a Plasmalab100 system from Oxford Plasma Technologies. A 2-4 mm wide region at the edges of the wafers was covered by a clamping ring, which improves the thermal contact between the wafer and the temperature controlled electrode during the etching process. As a result, we achieved uniform gratings over areas with a diameter of about 90 mm. Gratings with pitches from 1.0 µm to 2.4 µm were etched. The goal for the etching step was to demonstrate the Si structure heights above 30 µm. Achievement of this very high-aspect-ratio and high-resolution structures required careful tuning of all process parameters such as gas flow rates, pressure and RF power. Our results demonstrate the basic capability of the process to achieve this once all the parameters are optimized. Examples of cross-section images taken from the resulting structures are shown in Figure 3. Photoresist ARC ARC a b c d Cr Cr Si Si Cr Si Cr Si Figure 3. Schematics of the fabrication process: a) exposure and development of photoresist; b) dry etching into underlying antireflective coating; c) dry etching into Cr hard mask; d) Bosch etching of Si substrate. a b c d Figure 4. Examples of SEM cross-section view of the gratings in Si produced by a combination of displacement Talbot lithography and Bosch process. Grating period (p) and heights (h): a) p=1.0 µm, h=30 µm; b) p=1.5 µm, h=38 µm; c) p=2.0 µm, h=42 µm; d) p=2.4 µm, h=41 µm. Scale bar length in all images is 5 µm. 4. X-RAY IMAGING EXPERIMENTS The fabricated gratings have been successfully applied in a recently developed x-ray interferometer based on two phase shifting gratings that can be used for differential phase contrast as well as dark-field X-ray imaging. A thorough description of the interferometer can be found here [3]. The experimental setup is presented in Figure 5. The first phase grating G1 generates an intensity distribution due to the Talbot effect (which by coincidence is already discussed above in the context of the principle behind the DTL technique). This intensity distribution is then used as a structured illumination for the second phase grating G2. By appropriately choosing the distances between the gratings a large pitch fringe pattern can be generated at the detector plane. When a sample is introduced in the beam (just before the first grating G1) the recorded interference fringes will be affected in three distinct and measurable ways: 1) due to X-ray absorption their average intensity will be reduced; 2) due to refraction their phase will be shifted; and finally 3) due to small X-ray scattering their visibility (modulation) will be reduced as well. Those three signals can be retrieved through Fourier analysis [8]. In order to design a compact system with a large field of view, small grating periods (in the range of 1 μm) are necessary. This is due to the fact that large grating periods lead to large Talbot distances through the relation between the Talbot period and the grating period given above. The effect is quite strong since the distances vary quadratically with the pattern period. We performed imaging experiments to demonstrate the performance of the fabricated gratings. Two identical phase gratings G1 and G2 with a pitch of 1.3 μm and grating lines with a height of 24 μm in silicon corresponding to a π phase shift at 17 keV x-ray energy were fabricated. A photograph of the two 55×75 mm2 sized gratings is shown at the bottom right of Figure 5. An SEM image of the grating cross section is also shown in the same figure. As a source we used a microfocal x-ray tube from HAMATSU with a W source size of 9.5 μm (at 70 kVp and 100 mA). This small source size provided enough coherence to generate interference from the phase gratings. The generated interference fringes were recorded with the PI-SCX:4300 detector with a pixel size of 24 μm from Princeton Instruments. The design energy of the system was chosen to be 17 keV, and the distance l1 to 50 cm. Distances, d1 and l2 were chosen as the first fractional Talbot distance at the design energy. By setting d2 = d1 a symmetrical system design was achieved and d1 = d2 was approximately 5 mm. The fringe visibility at this configuration was measured to be 20% at the detector plane. Figure 6 shows one example of the acquired x-ray images of a fish. The sample was placed upstream from the gratings. The absorption, differential phase contrast and dark-field (scattering) images were taken during one acquisition. Sample Figure 5. Schematic presentation of the measurement setup (top); cross-section SEM image (left bottom) of one of the gratings and photograph (right bottom) of two gratings mounted in grating holder. Both gratings have period of 1.3 m, lines height of 24 m, and the size of 55x75 mm2. Scale bar length is 10 m. Figure 6. Absorption (left), differential phase (center) and dark-field (right) x-ray images of a fish. 5. CONCLUSIONS Our results demonstrate the fabrication of large-area, uniform silicon gratings with pitches in the range of 1.0-2.4 µm at an affordable cost with the use of the Displacement Talbot lithography technology for patterning and the Bosch process for silicon etching. The quality of the printed patterns in terms of uniformity and smoothness are enabling factors in achievement of the required high aspect ratio over large areas. Such gratings are key components that enable construction of compact systems for phase contrast X-ray imaging with a wide-ranging application potential in medicine, biology and material science. ACKNOWLEDGEMENTS Authors would like to thank the staff of TOMCAT group and Laboratory of Micro and Nanotechnology at Paul Scherrer Institut for discussions and technical support. The work was partially funded by the ERC-2012-STG 310005-PhaseX grant, ERC-PoC-2016 727246-MAGIC grant and the Fondazione Araldi Guinetti. We would like to thank M. Bednarzik, C. Wild, D. Marty, V. Guzenko and C. David from PSI-LMN, T. Steigmeier, G. Mikuljan, and C. Arboleda from PSI- TOMCAT for technical support and valuable discussions. REFERENCES [1] H. Solak, C. Dais, and F. Clube, Opt. Express 19, 10686 (2011). [2] F. Pfeiffer, T. Weitkamp, O. Bunk, and C. David, Nature Phys. 2, 258-261 (2006). [3] M. Kagias, Z. Wang, K. Jefimovs, and M. Stampanoni, "Dual phase grating interferometer for tunable dark- field sensitivity," Appl. Phys. Lett. 110, 014105 (2017). [4] D. J. Shir, S. Jeon, H. Liao, M. Highland, D. G. Cahill, M. F. Su, I. F. El-Kady, C. G. Christodoulou, G. R. Bogart, A. V. Hamza, and J. A. Rogers, "Three-dimensional nanofabrication with elastomeric phase masks," J. Phys. Chem. B 111(45), 12945 -- 12958 (2007). [5] D. C. Flanders, A. M. Hawryluk, and H. I. Smith, "Spatial period division -- a new technique for exposing sub- micrometer linewidth periodic and quasi periodic patterns," J. Vac. Sci. Technol. 16(6), 1949 -- 1952 (1979). [6] H. Solak, C. Dais, F. Clube and L. Wang, "Phase shifting masks in Displacement Talbot Lithography for printing nano-grids and periodic motifs," Microelectron. Eng. 143 (2015) 74 -- 80 [7] I.W. Rangelow, "Critical tasks in high aspect ratio silicon dry etching for microelectromechanical systems," J. Vac. Sci. Technol. A 21 (2003) 1550 -- 1562. [8] H. Wen, E.E. Bennet, M.M. Hegedus, and S. Rapacchi, "Fourier X-ray scattering radiography yields bone structural information," Radiology 251, 910-918, (2009).
1901.00457	1	1901	2018-12-29T22:07:17	Fluidic bypass structures for improving the robustness of liquid scanning probes	[ "physics.app-ph", "physics.flu-dyn" ]	Objective: We aim to improve operational robustness of liquid scanning probes. Two main failure modes to be addressed are an obstruction of the flow path of the processing liquid and a deviation from the desired gap distance between probe and sample. Methods: We introduce a multi-functional design element, a microfluidic bypass channel, which can be operated in dc and in ac mode, each preventing one of the two main failure modes. Results: In dc mode, the bypass channel is filled with liquid and exhibits resistive behavior, enabling the probe to passively react to an obstruction. In the case of an obstruction of the flow path, the processing liquid is passively diverted through the bypass to prevent its leakage and to limit the build-up of high pressure levels. In ac mode, the bypass is filled with gas and has capacitive characteristics, allowing the gap distance between the probe and the sample to be monitored by observing a phase shift in the motion of two gas-liquid interfaces. For a modulation of the input pressure at 4 Hz, significant changes of the phase shift were observed up to a gap distance of 25 {\mu}m. Conclusion: The presented passive design element counters both failure modes in a simple and highly compatible manner. Significance: Liquid scanning probes enabling targeted interfacing with biological surfaces are compatible with a wide range of workflows and bioanalytical applications. An improved operational robustness would facilitate rapid and widespread adoption of liquid scanning probes in research as well as in diagnostics.	physics.app-ph	physics	Taylor et al.: Fluidic bypass structures for improving the robustness of liquid scanning probes 1 Fluidic bypass structures for improving the robustness of liquid scanning probes David P. Taylor1,2, Govind V. Kaigala2*, Senior Member, IEEE Abstract -- Objective: We aim to improve operational robustness of liquid scanning probes. Two main failure modes to be addressed are an obstruction of the flow path of the processing liquid and a deviation from the desired gap distance between probe and sample. Methods: We introduce a multi-functional design element, a microfluidic bypass channel, which can be operated in dc and in ac mode, each preventing one of the two main failure modes. Results: In dc mode, the bypass channel is filled with liquid and exhibits resistive behavior, enabling the probe to passively react to an obstruction. In the case of an obstruction of the flow path, the processing liquid is passively diverted through the bypass to prevent its leakage and to limit the build-up of high pressure levels. In ac mode, the bypass is filled with gas and has capacitive characteristics, allowing the gap distance between the probe and the sample to be monitored by observing a phase shift in the motion of two gas-liquid interfaces. For a modulation of the input pressure at 4 Hz, significant changes of the phase shift were observed up to a gap distance of 25 µm. Conclusion: The presented passive design element counters both failure modes in a simple and highly compatible manner. Significance: Liquid scanning probes enabling targeted interfacing with biological surfaces are compatible with a wide range of workflows and bioanalytical applications. An improved operational robustness would facilitate rapid and widespread adoption of liquid scanning probes in research as well as in diagnostics. Index Terms -- Open-space microfluidics, liquid scanning probe, robustness, nodal analysis, fluidic bypass, modulated flow, surface processing. I. INTRODUCTION A KIN to scanning probes, such as atomic force microscopes (AFM), and scanning tunneling microscopes (STM) used for applications in e.g. metrology, liquid scanning probes enabling localization of liquids on biological samples, are poised to be increasingly used in biomedical research and medical diagnostics. [1], [2]. Liquid scanning probes enable local interaction with standard biological substrates, such as Petri dishes, microtiter plates and microscope glass slides. By scanning the probe across a substrate, distinct areas of interaction can be selectively chosen and interrogated. Different variants of liquid scanning probes have been developed to localize liquids on specific regions on surfaces without cross-contamination between neighboring areas of interaction. Demonstrated implementations e.g. are based on the delivery of reagents in a second, aqueous phase to reduce mixing [3], or the release of minute amounts of reagents [4], [5]. Another approach is to create flow patterns in the gap between the liquid scanning probe and the sample by injection and simultaneous re-aspiration, to confine the flow of a reagent within a so-called hydrodynamic flow confinement (HFC). Associated methods impose no specific constraints on the properties of the applied liquids and are commensurate with the length-scales of standard substrate formats, as they enable interaction with areas ranging from tens of µm2 to several cm2 [6]. This principle is applied in e.g. the microfluidic fountain pen, the multifunctional pipette and the microfluidic probe (MFP) [7] -- [11]. The MFP allows to establish a flow confinement of a liquid reagent (to as low as a few pLs) on a surface with a footprint at the scale of 100 µm × 100 µm (see Fig. 1B). During operation, a probe head with a flat apex is positioned at a distance of about 10-100 µm from a sample. From apertures at the center of the apex, a processing liquid can be injected and re-aspirated together with some surrounding immersion buffer, resulting in an HFC of the processing liquid on the sample surface. The use of the MFP and its capability for spatial and temporal multiplexing of liquids on surfaces has been demonstrated in the form of local multiplexed immunohistochemistry on tissue sections, local lysis of adherent cells and the creation of protein microarrays [1], [2], [12], [13], for example. A key aspect limiting the transition of these liquid scanning probes to the life-sciences, biology and medicine is their lack of operational robustness. This lack of robustness is mainly caused by the slow or delayed detection of the occurrence of a failure by the peripherical operating instrumentation and monitoring units (see Fig. 1A). This can result in significant damage to the applied probe and the sample being probed. In this paper, with the exemplary example of the MFP, we identify two main operational failure modes of liquid scanning probes that rely on simultaneous injection and aspiration of liquids. As re- aspiration of a processing liquid is required in several scenarios, such failure modes can occur in scanning electrochemical microscopy (SECM) push-pull probes [14] and AFM-based probes used with liquids [15]. The strategies outlined here are hence broadly applicable to a range of liquid scanning probes. We here propose a design element, a microfluidic bypass channel, which can be operated in two configurations to prevent these failures by either enabling a passive response of the probe, or by extending capabilities of the monitoring unit to allow for rapid feedback. Submitted for review on August 4, 2018. This work was supported, in part, by the European Research Council grant to G.V.K. (Project No. 311122, "BioProbe"). D. T. and G.V.K. are both at IBM Research -- Zurich, 8803 Rüschlikon, Switzerland (email: [email protected]). D. T. is additionally a doctoral student at École Polytechnique Fédérale de Lausanne (EPFL), Switzerland. Taylor et al.: Fluidic bypass structures for improving the robustness of liquid scanning probes 2 immersion buffer and a contamination of regions of the sample, which should not have been in contact with the processing liquid. Fig. 2A illustrates this for partial obstruction of either the injection or the aspiration aperture. This failure mode is especially problematic in using a device with several parallel flow confinements [6]. Further, the obstruction of an aperture may lead to the build-up of increased pressure levels within the fluidic system and result in damage to hardware components, typically capillary-chip-interfaces, as well in leakage of the processing liquid in affected parts of the instrument. In the case where the aspiration aperture is used for picking objects from a surface, such as cells, from a surface, the build-up of high differential pressure levels might result in damaging those objects [15]. To the best of our knowledge, no strategies have been demonstrated to alleviate problems related to obstruction of channels. Here we present a fully passive solution based on a liquid filled bypass channel between the injection and the aspiration channel in the probe head (Fig. 2B). An additional channel, the compensation channel, is connected to the bypass channel. Buffer is injected through the compensation channel at constant pressure to equalize the pressure on both sides of the flow-path element R4 when the probe is positioned at the desired gap distance. If an obstruction of one or both apertures occurs, the differential pressure across the bypass increases, the pressure across element R4 is not balanced and the flow of injected reagent is redirected through the bypass. Fig. 2. Failure mode resulting from sample topography, or particles contained in the processing or immersion liquid and the proposed solution based on a resistive bypass. A) A blockage of either the injection or the aspiration aperture might result in a leakage of the processing liquid into the immersion liquid. B) Equivalent electrical model of a probe head with resistive bypass to mitigate failure due to obstruction of apertures. Fig. 1. Liquid scanning probes enable interfacing with immersed biological samples. A) Liquid scanning probes functionally comprise five components. B) The probe head of a microfluidic probe has a flat apex with at least two apertures. The probe head operates in proximity (~20 µm) to the surface of an immersed sample. By injection of liquid from the first aperture and re- aspiration at a higher flow rate from the second aperture, a reagent can be confined hydrodynamically to a specific region of the sample. II. FAILURE MODES OF LIQUID SCANNING PROBES AND STRATEGIES TO AVOID THEM In liquid scanning probes, the fluidic structures and the instrumentation required to operate the probes are fairly simple, thus failures during operation largely result from the properties of the processing liquids and samples (e.g. agglomeration of solutes) and from improper handling (e.g. a misaligned placement of a sample). As biological samples and liquids can contain particles and bubbles and user-interactions are naturally prone to variation, addressing the problem of robustness is key to enable a wide-spread use of liquid scanning probes. We identified two main types of failure modes: a) the obstruction of one or more apertures resulting in a leakage of the processing liquid or damage to the components of the setup, and, b) a deviation from the desired gap distance resulting in an inhomogeneous interaction with the sample. As a means to mitigate the impact of these two main failure modes, we introduce the concept of a fluidic bypass structure between the injection and the aspiration channel. We make use of the analogies between fluidic and electrical circuits to illustrate and analyze the behavior of the introduced concepts. In the following designs and their analysis we assume that the flow of liquids is actuated by the setting of a controlled pressure level e.g. in a reservoir connected to a microfluidic channel. We emphasize that the presented concepts are equally applicable when imposing the flow rate with e.g. a syringe pump. A. Obstruction of apertures Partial or complete obstruction of one or several apertures can be caused by either local elevations in the sample topography, or by particles and bubbles contained in the processing or the immersion liquid. As particles and small bubbles tend to follow the flow towards the aspiration aperture, this aspiration is likely to be clogged. During operation of the MFP and other liquid scanning probes that rely on re-aspiration of a processing liquid, an obstruction of the flow path between the injection and the aspiration aperture reduces the effective re-aspiration of the injected processing liquid. This can easily result in a leakage of the processing liquid into the surrounding B. Variations of the gap distance between probe and sample The second failure mode is induced by a deviation from the desired gap distance between the probe and the sample. Such a deviation is caused by scanning of the probe across a sample with variable topography, or by a mechanical misalignment between the scanning-plane of the probe and the surface of the sample. For given injection and aspiration flow rates, the interaction with the sample surface is specific for a gap distance [7], [16]. For small gap distances (<5 µm for the MFP), the probe and the sample might crash, while for large gap distances (>30 µm for the MFP, depends on the design of the probe and the ratio of aspiration/injection flow), the injected processing Taylor et al.: Fluidic bypass structures for improving the robustness of liquid scanning probes 3 pressure inside this coupling cavity can be adjusted via the compensation channel. If the injection of reagent through the injection channel is now modulated at a certain frequency, the transduction of this modulation to the aspiration channel depends on the fluidic impedance of the fluidic network formed by the channels in the probe and the gap between the probe and the sample. A change in gap distance thus induces a change in phase shift of the transduced pressure signal. This phase shift is measurable with standard and simple imaging equipment, such as cell-phone cameras. III. THEORY We designed and analyzed the bypass structures by drawing analogies between electric and fluidic circuits and making use of principles of voltage distribution across networks of electrical elements and the superposition of linear responses [22], [23]. A. Resistive bypass -- dc mode To study behavior of a resistive bypass, we performed a steady state nodal voltage analysis of the corresponding fluidic network (see Fig. 4A). We assume that flow is driven by three ideal pressure sources connected to the injection, the aspiration and the compensation channel, respectively. Following the Norton-theorem [24], all three ideal pressure sources are converted to ideal flow sources. For the combination of flow- path elements characterized in Fig. 4D, representing a standard probe design with resistive bypass, we numerically solved the system of linear equations to find the relative pressures at the nodes φ1 − φ5. With knowledge of the pressure drop across each of the involved flow-path elements, the actual flow through each element can be computed (see supplementary information section I for details on the calculation of hydraulic resistances). As shown in Fig. 4C, during normal operation, there is no flow across the first section of the bypass (R4) and all the processing liquid flows through the injection aperture into the HFC and is then re-aspirated. There is a small inflow across R9, as immersion buffer is drawn into the gap from either side, ensuring confinement of all the injected flow of processing liquid. To assess the response to obstruction of either one of the two apertures, the resistance of the flow-path element linked to either the injection aperture (R6) or the aspiration aperture (R7) was increased across two orders of magnitude. In response to an obstruction of the injection aperture, the nodal potential φ1 increases and φ1 and φ2 are no longer equal. Consequently, a fraction of the injected processing liquid flows through the bypass, thereby reducing the effective injection flow of processing liquid into the gap. The effective injection flow of processing liquid further decreases due to the higher resistance of the obstructed injection flow path. The more severe the obstruction of the injection aperture, the more processing liquid passes through the bypass and the less flow enters the gap. In a scenario without a bypass channel, only the second effect, the reduction of the injection flow due to an increased resistance, occurs. In the case of an obstruction of the aspiration aperture, in a probe with a resistive bypass, the nodal potentials φ2 and φ3 drop and again a share of the injected processing liquid flows Fig. 3. Failure mode related to sample topography or a misaligned placement of a sample and proposed solution based on a capacitive bypass. A) In the case of a low gap distance, the probe might scratch and damage the sample. In the case of larger gap distances, the processed areas at the surface are not well defined or the processing liquid might not be in contact with the sample B) Equivalent electrical model of a probe head with capacitive bypass to mitigate failure due to obstruction of apertures. liquid might not be in contact with the sample surface (see Fig. 3A). In order for the HFC to interact with a sample in a repeatable manner, as required for e.g. assays with optical readout, working at a known and constant gap distance is crucial. AFM-based liquid scanning probe and probes related to scanning ion conductance microscopy (SICM) or scanning electrochemical microscopy (SECM) are readily suited for monitoring the gap distance by assessment of the deflection of a cantilever in the first case, or by measurement of a current between electrodes in the case of the latter ones. In contrast, for purely microfluidic liquid scanning probes, continuous monitoring of the gap distance poses a challenge, as many available approaches have limited compatibility with bioanalytical applications: optical measurement techniques, for instance, depend on the optical properties of the sample and are therefore not compatible with many assay. A measurement of electrical current between electrodes, as employed in SECM, imposes conditions on the applied buffer systems and requires the implementation of electrodes, which also limits the types of compatible applications [17] -- [19]. A measurement of the hydraulic resistance of the gap between the probe and the sample requires a relatively high flow rate (above 100 µl/min) to obtain a quantifiable signal [20]. The sample surface thus is exposed to significant shear stress, which is incompatible with e.g. assays on surface-adherent cells. Other approaches are not commensurate with the range of gap distances of 5 µm to 100 µm, at which purely microfluidic liquid scanning probes are typically operated: AFM-related probes usually are operated at gap distances smaller than 1 µm [4], while e.g. a measurement of distances in a liquid environment using ultrasound waves has a limit of resolution at the scale of 30 µm [21]. We here present a method of measuring the gap distance between a liquid scanning probe and a sample based on the above introduced bypass channel, which provides a suitable range of measurement up to 25 µm and is well compatible with a wide range of bioanalytical assays. For this, we introduce a bubble of compressible gas into the bypass channel (see Fig. 3B) to change its behavior from purely resistive to capacitive. To stably hold the bubble in place, the geometry of the bypass channel is adapted to form a so-called coupling cavity. The Taylor et al.: Fluidic bypass structures for improving the robustness of liquid scanning probes 4 through the bypass. As the negative relative pressure applied to the aspiration channel in absolute numbers is higher than the positive relative pressure applied to the injection channel, the pressure drop building up across the bypass channel in the case of an obstructed aspiration aperture can be higher, accordingly. If the value of R7 exceeds a certain threshold, all injected processing liquid flows through the bypass channel and flow across R6 is inverted, as immersion buffer is additionally drawn into the injection aperture (obstruction factor of 30 in the discussed design, see Fig. 4B). In Fig. 4B, the flow across R6 in the case of an obstruction of either the injection (faint colors) or the aspiration aperture (intense colors), normalized by the undisturbed flow across R6, is plotted versus a factor of obstruction by which either R6 or R7 are multiplied. If there is an obstruction of the injection channel, in a probe with a resistive bypass, the reduction of the flow across R6 is over 2-fold more pronounced than in a design without a bypass. The benefits of a resistive bypass becomes more apparent for the case of an obstructed aspiration aperture: for a design without a bypass, the injection flow into the gap remains unaffected and processing liquid leaks into the surrounding immersion liquid. In a probe with resistive bypass, in contrast, leakage of the processing liquid is completely avoided. B. Capacitive bypass -- ac mode For probes with capacitive bypass elements, the network analysis facilitates the design and operation by highlighting the correlations between the applied relative pressure levels, the modulation frequency, the internal volume of the coupling cavity, the gap distance, and the resulting phase shift between the input modulation and the modulation transferred to the aspiration channel. Analysis of dc (constant flow) and ac (time- dependent flow) characteristics is performed separately and the results are superimposed (see Fig. 4E). Further, as the complex impedance is required to describe the frequency dependent properties of e.g. a capacitor (see supplementary information section I), all calculations are performed in complex space. There are two pressure sources relevant for the dc analysis: the first one supplies a constant positive relative pressure to the injection channel, whereas the second provides a constant negative relative pressure to the aspiration channel. In analogy to the above analysis of the resistive bypass, those two ideal pressure sources are converted to ideal flow sources. As there is no net current across the bypass (Z3), this flow-path element is irrelevant for the dc analysis. Again, a system of linear equations is solved to find the dc components of the relative pressures at the nodes κ1 − κ4. For the ac analysis, the only source to be considered is a cos-type ac pressure source connected to the injection channel, the two dc sources are treated as short circuits. After conversion of this source to an ideal flow source and the solution of the corresponding system of linear equations, one obtains the relative amplitudes and phase shifts of the pressure modulation at the nodes κ1 − κ4. This data, superimposed with the dc distribution of pressure across the network, allows us to compute the flow across any of the flow path-elements (assuming the system has equilibrated). On the basis of the described ac model, we analyzed how strongly a change in gap distance between probe and sample would change the phase difference between κ1 and κ2 and how well this effect would be observable. The pressure amplitude of the modulation generated by the ac source linked to the injection channel is transferred to the node κ2 at a factor of about 10-2. Assuming input modulation amplitudes smaller than 100 Fig. 4. Analysis of microfluidic probe heads with resistive or capacitive bypass structures. A) Equivalent electrical model of a microfluidic probe head with a resistive bypass. B) Plot of normalized flow through the injection aperture plotted over the factor of aperture-blockage for a device with resistive bypass (green) and a device without bypass (blue). The dynamic response of a probe head with resistive bypass to the event of an obstruction significantly reduces the risk of leakage of processing liquid. C) Flow path of liquids in a probe head with resistive bypass during normal operation and blockage of either the injection or the aspiration channel. D) Conductance of the individual flow-path elements of an exemplary probe head with resistive bypass. E) Equivalent electrical model of a microfluidic probe head with a capacitive bypass. The ac and dc behavior of the system was characterized separately and superimposed. F) Transfer of a sinusoidal pressure modulation from κ1 to κ2 in two designs featuring coupling cavities of different volumes. Taylor et al.: Fluidic bypass structures for improving the robustness of liquid scanning probes 5 mbar, a direct measurement of the transferred pressure signals using standard pressure sensors (resolution of ~0.25 mbar) would result in noisy signals. We thus chose to monitor the movement of the gas-liquid interface between the gas in the coupling cavity and the liquid in the aspiration channel, to which we refer as the rear interface (see Fig. 6C), to track the modulation of the pressure in the aspiration channel. The gas- liquid interfaces between the gas in the coupling cavity and the liquid in the injection and the aspiration channel reside in tapered structures, so that the radius of curvature of each interface is free to adapt to the corresponding differential pressure. Consequently, the acceleration of the rear interface is proportional to the pressure difference between the inner volume of the coupling cavity and the pressure at κ2. We therefore assume that the movement of the rear interface exhibits the same relative phase shifts as the pressure at κ2 itself. Based on the computed, time-dependent pressure levels at κ1 and κ2, as well as the geometrical boundary conditions and the properties of the involved fluids, we estimate the movement amplitude of the rear interface for a given combination of gap distance and modulation frequency (see supplementary information, section V). The surface plots in Fig. 4F display the estimated movement amplitudes for a range of modulation frequencies and gap distances, assuming a reasonable input modulation amplitude of 40 mbar. It can be seen that the movement amplitudes of the rear interface drop from over 100 µm to less than 20 µm, as the gap distance becomes smaller than 5 µm. This is due to the decrease of the relative pressure at κ2 occurring when the probe is close to the surface of the sample, which results in an increased pressure drop across the rear interface. Under these conditions the rear interface adapts a relatively small radius of curvature and the changes induced by the modulation result in smaller relative changes of the interface position. Our model also predicts that the movement amplitudes get smaller for higher modulation frequencies. This occurs, because the analyzed network acts as a high-pass filter and more efficiently transfers the pressure modulation to the aspiration side at higher frequencies. A better transfer of the pressure modulation in turn results in a lower differential pressure across the coupling cavity and therefore in less movement of the gas- liquid interfaces. This effect shifts to higher frequencies as the volume of the coupling cavity is reduced. The color of the surface plots in Fig. 4F encodes the change in phase shift between the pressure levels at κ1 and κ2 for a change of the gap distance of 1 µm. Regions in which changes of the gap distance induce a high change of the phase shift are marked by more intense color. It is clearly observable that the changes in phase shift are more pronounced across a wider range of frequencies and gap distances for smaller coupling cavities. Movement amplitudes in the range of 100 µm can be resolved well with e.g. low-cost optical equipment (see subsequent section). Our model therefore suggests that a simple optical tracking of the rear interface should allow an observation of relative changes of the phase shift induced by changes of the gap distance for gap distances above 5 µm, with higher movement amplitudes to be expected for low frequencies. IV. EXPERIMENTAL DETAILS A. Probe heads and experimental platform [12]. Channel The MFP platform consists of five basic components: a sample holder with a sample covered by immersion liquid, a probe head, an XYZ positioning system to position the probe accurately relative to the sample, an imaging system, and a liquid flow actuation system. The probe can be made from various materials to be suited for a specific application. In the discussed case the probe is a silicon glass device structures were photo- lithographically defined and then etched into the silicon at a depth of 100 µm using deep reactive-ion etching (DRIE). Subsequently, the silicon wafer was anodically bonded to a BF33 glass wafer (1.3 kV, 475 °C), to seal the channel structures and single probes were then obtained by dicing. After dicing, the apex of the probe was lapped and polished on a wafer polishing tool (LP50, Logitech, UK) to obtain a well- defined and smooth surface. The positioning system consists of three linear stages (Zaber Technologies Inc., Canada) with a positioning resolution of 0.05 µm. The sample can be scanned in the XY-plane relative to the probe, while the probe itself moves only along the Z-axis, in order to stay aligned with the optical axis of the microscope. Imaging of the HFC is performed from underneath, through a transparent sample, using an inverted microscope (here: Lumascope LS620, Etaluma Inc., USA). A dye, e.g. fluorescein, can be added to the processing liquid to facilitate the visualization of the HFC. The tubing (1/16 FEP tubing, IDEX H&S, USA) is connected to the probe by a circular microfluidic connector (Dolomite Microfluidics, UK). Each fluidic channel is connected to a fluidic reservoir, in which the relative pressure is controlled using a pressure control system (EZ-Flow, Fluigent SA, France). Only DI water was used as liquid in the described experiments. For better contrast, food colorant and fluorescein were added, as needed. We used a microscope glass slide as a dummy- sample. The glass slide had 250 µm thick slabs of PDMS on it, which allowed us to selectively obstruct either the injection or the aspiration aperture. B. Experimental setup for evaluating the capacitive bypass In order to modulate the relative pressure in the reservoir connected to the injection channel in the experiments on the capacitive bypass, the reservoir was connected to a 2/3-way switch valve (24 V solenoid valve, Neptune Research & Development Inc., USA). The valve linked the reservoir to two gas-filled buffer containers with a volume of 0.5 liters each, one supplying positive relative pressure and the other one negative relative pressure (see supplementary information section IV for details). The pressure in the buffers was controlled by a pressure control system (EZ-Flow, Fluigent SA, France). The buffers were required to prevent an interference between the alternating relative pressure in the reservoir linked to the injection channel and the pressure control system, which is configured to maintain a constant pressure at its output ports. Taylor et al.: Fluidic bypass structures for improving the robustness of liquid scanning probes 6 The 2/3-way valve was supplied with power from a laboratory power supply and connected to ground across a bipolar transistor, which was switched by a square-wave signal generated with a waveform generator (33511B, Keysight Technologies, USA). To record videos of the coupling cavity at a frame rate of 240 fps during operation of the MFP, we used a Galaxy S7 cellphone (Samsung Electronics, South Korea) with a 20× clip- on lens. Interface movements could be reliably tracked down to movement amplitudes of about 80 µm. C. Analytical modelling The described systems of linear equations were solved using Matlab (MathWorks, Inc., USA). Also, the interior-point optimization routines used to find suitable input pressure levels, as described in supplementary information section III, were setup and run in Matlab. D. Image processing and measurement of the phase shift To assess the phase shift between κ1 and κ2 in probes with a capacitive bypass, we analyzed the recorded videos of the coupling cavity to track the movement of the front interface (same relative phase shift as κ1) and the rear interface (same relative phase shift as κ2). The optical flow between two subsequent frames of the video was computed using Matlab, which allowed us to extract relative velocity amplitudes in defined regions of the videos [25]. This was performed for both, the front and the rear interface, then the acquired data was transformed to spectral space and finally the phase information at the modulation frequency was extracted for each interface from the corresponding fast Fourier transform (FFT) bin. V. RESULTS AND DISCUSSION A. Resistive bypass for compensation of obstructions of apertures through the compensation channel, was To test and demonstrate the functionality of the resistive bypass structures, we added food colorant to the liquids used in the experiment. This allows the tracking of specific liquids within the fluidic network. The processing liquid was colored green, the immersion buffer blue and the bypass buffer, which is injected left transparent. Fig. 5A shows a photograph of a probe with a resistive bypass. The conductance of the individual flow-path elements of this design is displayed in Fig. 4D. The major share of the overall resistance of the bypass is attributed to the first section of the bypass (R4), in order to limit the flow of buffer from the compensation channel into the injection channel in situations when the distance between probe and sample is larger than the desired gap distance. During normal operation (see Fig. 5B), the processing liquid (green) flows through the injection channel (left hand side in Fig. 5B) and is re-aspirated together with some of the surrounding immersion liquid (blue) through the aspiration channel (right hand side in Fig. 5B). There is no flow across the first section of the bypass channel (R4) and only flow of buffer (transparent) in the second section of the bypass channel (R5). We obstructed the apertures one after another by approaching the probe head towards a slab of PDMS of 250 µm thickness, which we positioned on the microscope glass slide that served Fig. 5. Resistive bypass for dc configuration. A) Probe head with channels etched in silicon. B) Normal operation: no flow across first section of the bypass, only flow of bypass buffer through second half of bypass. C) Complete obstruction of the injection aperture: processing liquid (green) flows through the bypass. D) Complete obstruction of aspiration aperture: immersion liquid (blue) is pulled into the injection aperture and through the bypass together with the processing liquid. liquid into leaking as the sample surface in the described experiments. By centering the apex of the probe on the edge of the slab of PDMS, one aperture could be blocked selectively while leaving the other one unaffected. If there is an obstruction of the injection aperture, flow in the injection channel starts stagnating and the relative pressure in the injection channel increases. Consequently, the total pressure drop across the bypass channel increases and the injected processing liquid is partially redirected through the bypass channel (see Fig. 5C). The probe can be brought in a full contact with the slab of PDMS and then be retracted subsequently without processing the surrounding immersion liquid. In the case of a total obstruction, all injected processing liquid is redirected through the bypass. When bringing the aspiration aperture gradually closer to the surface of the slab of PDMS, the aspiration flow across R7 drops and the relative pressure in the aspiration channel gradually decreases. Again, this results in a higher total pressure drop across the bypass and a partial re-routing of the flow of injected processing liquid through the bypass channel. If the obstruction of the aspiration aperture is severe, all injected processing liquid is redirected through the bypass channel together with some immersion buffer, which enters the injection channel through the injection aperture (see Fig. 5C). Also the aspiration aperture can be brought into complete contact with the PDMS obstacle and then be retracted again without leakage of processing liquid into the immersion buffer. B. Capacitive bypass for continuous distance sensing Fig. 6A depicts the probe used for demonstrating the concept of measuring the gap distance by observing the phase shift between the modulation of pressure in the injection and the aspiration channel. The coupling cavity has two tapered regions in order to let the front and the rear interface freely adapt to the differential pressure that drops across them [26]. The tapered region hosting the front interface is designed with a larger angle of inclination, as the differential pressure across the front interface is lower and this interface therefore adapts to larger radii of curvature than the rear interface. The drain channel and Taylor et al.: Fluidic bypass structures for improving the robustness of liquid scanning probes 7 in the injection channel and the probing channel did not have any function in the described experiments. On the basis of the above considerations, we chose a probe design with a relatively small coupling cavity with a volume of 0.36 mm3 and a modulation frequency of 4 Hz. This modulation frequency was found to be a good trade-off between resulting signal amplitudes, observable changes of the phase shift and the detectability of the signal with respect to noise from the environment. For tracing the phase shift between the pressure modulation the pressure modulation in the aspiration channel, we decided to track the movement of the front and the rear interface using a video camera. By inferring the phase of the excitation signal and the transduced signal from the same video, we circumvent the problem of having to synchronize signals from multiple measurement devices. We set the relative pressures in the reservoirs such that the mean injection flow rate was 3 µl/min and the mean aspiration flow rate 9 µl/min. We then recorded the movement of the front and rear interface for 5 s at a given gap distance, to integrate over 20 modulation periods. For gap distances below 25 µm, we randomly chose the order of the measurement points, to exclude hysteresis effects. The measured relative phase shifts between the front and the rear interface show a clear correlation with the gap distance. A change in phase shift is traceable up to gap distances of about 25 µm under the described experimental conditions. This covers the typical operating range during MFP experiments. In Fig. 4F we highlighted the chosen experimental conditions and the observed measurement range with dashed lines in the corresponding surface plot of the modulation transfer function. The observed measurement range is in good agreement with the theoretical prediction. In order to fit the analytical model to the recorded experimental data, two modifications have to be made. The first modification is required, because the contact angle between the materials the probe is made of and water is smaller than 90°. As a consequence, liquid wets the inner walls of the coupling cavity, which gives rise to a bypass flow of liquid through the coupling cavity [27]. This has to be taken into account by adding a resistive element in parallel (see supplementary information, section VI). A second modification is required, as to Z3 Fig. 6. Capacitive bypass for continuous monitoring of the gap distance. A) Probe head with channels and capacitive bypass etched in silicon. B) Differential phase shift between the movement of the front and the rear interface recorded at 4 Hz (dots) and fitted theoretical model (line). C) Air- filled coupling cavity during the experiment. in the actual experiment there are parasitic capacitances spread across the fluidic network. We take these into account by adding a capacitive element in parallel to Z2. By treating the properties of those additional elements as free fit parameters, the model can be fitted to the experimental data (see Fig 6B). To fit the experimental data, the value of the resistive element acting in parallel to the coupling cavity is estimated to be 1.25∙Z4 and the sum of all parasitic capacitance in the network is estimated to be 1.23 times higher than the capacitance of the coupling cavity, corresponding to a volume of 0.44 µl. The values of these two fit parameters do not conflict with any aspect of the physical setup and are intuitively reasonable. For further refinement of the model, one might consider taking into account the dampening effects of viscous shear stress on the motion of the gas-liquid interfaces. VI. CONCLUSION AND OUTLOOK in We introduced a design element, a microfluidic bypass channel, which significantly improves the operational robustness of liquid scanning probes relying on re-aspiration of a processing liquid. The bypass channel can be operated two configurations, each addressing one of the two main operational failure modes: in the dc mode, the bypass channel enables the fluidic network to intrinsically react to an obstruction of apertures and prevents leakage of the processing liquid into the immersion liquid. In the ac mode, the bypass enables continuous monitoring of the gap distance without the need for sophisticated sensing equipment and without adding constraints on the performed experiments. Even though the ideal geometry of the bypass channel is different for each mode, a bypass designed to be used in ac mode can be used just as well in dc mode. While the performance of the bypass in dc mode fully meets the requirement of preventing leakage of processing liquid into the immersion liquid, if one or several apertures are obstructed, we envisage that monitoring of the gap distance in ac mode could be further improved. The resulting range of measurement from 5 µm to 25 µm could be enhanced by adding hydrophobic patches to the coupling cavity, to suppress its resistive behavior. Also, additional capacitive flow-path elements could be added to obtain e.g. local extrema of the phase transfer function at specific gap distances. Further, a higher resolution in tracking the interface positions by means of e.g. electrode arrays, or optical line sensors would increase the range of operation in terms of gap distance and modulation frequency. We further envisage that the dc and ac functionality can be combined to directly enable leakage free operation at a constantly monitored gap distance: the differential pressure building up due to an obstruction could be employed to displace the gas in the coupling cavity and open up a resistive flow-path for internal bypassing of the processing liquid. The action of such a design element would be fully reversible and repeatable, as the gas volume would move back to its original position and close the bypass flow path for the processing liquid upon normalization of the differential pressure levels. Bypass elements might also be used for rapid switching between different processing liquids [27]. In the context of more specific applications, the functionality of a fluidic bypass could be enhanced with additional functional elements, as e.g. spheres and Taylor et al.: Fluidic bypass structures for improving the robustness of liquid scanning probes 8 bi-stable membranes. Such functional elements could open or close specific flow paths depending on the differential pressure dropping across the bypass. This would enable the probe to react to certain events with specific actions, without the need for any sensing or control infrastructure. The presented concepts will help to improve the operational robustness, applicability and versatility of liquid scanning probes relying on the re-aspiration of liquid, while being compatible with a wide range of device concepts and bioanalytical applications. We hope the presented structures and methods help to pave the way for a reliable, long-term operation of such probes in diagnostic and analytical applications. APPENDIX • Supplementary information on analytical models, the experimental setups and corresponding methods. • Video "Cavity_4Hz.mp4": recording of the coupling cavity (bypass in ac mode) at a gap distance of 20 µm and a modulation frequency of 4 Hz. ACKNOWLEDGMENTS We acknowledge financial support by the European Research Council (ERC) Starting Grant, under the 7th Framework Program (Project No. 311122, "BioProbe"). We thank Federico Paratore, Xander F. van Kooten, Robert D. Lovchik, Ute Drechsler, Marcel Bürge and Yuksel Temiz for stimulating discussions and support. 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ESTIMATION OF PARAMETERS OF FLOW-PATH ELEMENTS To calculate the hydrodynamic resistance of individual flow path elements, we used the formulas listed as follows: • For elements with round cross-section (capillaries) [28]: 𝑅𝑟𝑜𝑢𝑛𝑑 = 8 ∙ 𝜇 ∙ 𝑙 𝜋 ∙ 𝑟4 Here, 𝜇 = 1.002 ∙ 10−3 Pa ∙ s is the dynamic viscosity of water at room temperature, 𝑟 is the cross- sectional radius of the flow-path element and 𝑙 is its length. • For elements with rectangular cross-section (channels) [29]: 𝑅𝑟𝑒𝑐𝑡 = 4 ∙ 𝜇 ∙ 𝑙 𝑤 ∙ ℎ3 ∙ 1 1 3 − 64 ∙ ℎ 𝜋5 ∙ 𝑤 ∙ tanh 𝜋 ∙ 𝑤 2 ∙ ℎ 𝑤 is the width and ℎ the height of the flow-path element under consideration, with 𝑤 > ℎ. • To estimate the hydrodynamic resistance of flow-path elements in the gap between probe and sample, we assumed purely radial flow and one central injection emitting liquid at the flow rate 𝑄 [28]. On the basis of continuity and assuming no-slip boundary conditions at the probe and the sample, it can be stated that ℎ 2𝜋 𝑄 = ∫ 𝑑𝑧 0 ∫ 𝑟𝑑𝜃𝐴(𝑟)𝑧(ℎ − 𝑧) 0 Here, the 𝑧-axis is oriented perpendicularly to the two parallel plates, 𝑧 = 0 is at the surface of the sample and 𝐴(𝑟) is the area of the bounding surface at radius 𝑟. Integration over the gap distance h yields: Inserting this expression into the creeping flow approximation of the Navier-Stokes equations gives 𝑢⃗ (𝑟, 𝑧) = 3𝑄 𝜋ℎ3 𝑧(ℎ − 𝑧)𝑒 𝑟 and integration results in an expression for the pressure 𝑝 at a given radius 𝑟 𝜕𝑝 𝜕𝑟 = −𝜇 𝜕2𝑢⃗ 𝜕𝑧2 𝑝(𝑟) = 6𝜇𝑄 𝜋ℎ3 ln ( 𝑟1 𝑟2 ) Therefore 𝑅𝑔𝑎𝑝 = 6𝜇 𝜋ℎ3 ln ( 𝑟1 𝑟2 ) S-10 We assumed 𝑟1 = 100 µm and 𝑟2 = 300 µm for the HFC (R8 and Z6) and 𝑟1 = 100 µm and 𝑟2 = 600 µm for the elements linking to the edge of the apex (R9, R10 and Z7, Z8). • To estimate the capacitance of the volume of air in the coupling cavity, we assume ideal gas laws and fully isothermal compression. The compressibility of the gas inside the cavity therefore is 𝑘 = 1 ∙ 10−5 Pa−1 . If the pressure applied through the liquid to the gas in the cavity − 1 𝑉⁄ ∙ 𝜕𝑉 𝜕𝑡 =⁄ changes, the volume of liquid inside the cavity changes: 𝑄 = 𝐶 ∙ 𝑑∆𝑝 𝑑𝑡 𝑄 denotes the flow of liquid and 𝐶 the capacitance of the cavity. Insertion of 𝑘 yields: 𝑄 = − 𝑑𝑉 𝑑𝑡 = −𝑉 ∙ (− 1 𝑉 𝜕𝑉 𝜕𝑝 ) ∙ 𝑑∆𝑝 𝑑𝑡 = −𝑘𝑉 ∙ 𝑑∆𝑝 𝑑𝑡 It thus follows that 𝐶 = −𝑘𝑉 The impedance 𝑍𝐶 of the capacitive element further depends on the modulation frequency 𝑓𝑚: 𝑍𝐶 = 1 𝑖 ∙ 2𝜋𝑓𝑚 ∙ 𝐶 II. SYSTEMS OF LINEAR EQUATIONS Conversion of the ideal voltage sources to current sources (connected in parallel with the first flow-path element) following the Norton theorem [24] A. Analysis of probes with resistive bypass 𝐼1 = 𝑉1 𝑅1 The system of linear equations for a probe with resistive bypass (𝑔𝑖 denotes the conductance 1 𝑅𝑖⁄ ): 𝑔1 + 𝑔4 + 𝑔6 −𝑔4 0 ( −𝑔4 0 −𝑔6 0 𝑔2 + 𝑔4 + 𝑔5 −𝑔5 −𝑔5 0 0 𝑔3 + 𝑔5 + 𝑔7 0 −𝑔7 B. Analysis of probes with capacitive bypass −𝑔6 0 0 0 0 −𝑔7 −𝑔8 ∙ 𝜑1 𝜑2 𝜑3 𝜑4 𝜑5) = 𝐼1 𝐼2 −𝐼3 0 0 ) ( 𝑔6 + 𝑔8 + 𝑔9 −𝑔8 𝑔7 + 𝑔8 + 𝑔10) ( The system of linear equations for the ac analysis of a probe with capacitive bypass (𝑦𝑖 denotes the admittance 1 𝑍𝑖⁄ ): 𝑦1 + 𝑦3 + 𝑦4 −𝑦3 ( −𝑦3 −𝑦4 0 𝑦2 + 𝑦3 + 𝑦5 0 −𝑦5 −𝑦4 0 𝑦4 + 𝑦6 + 𝑦7 0 −𝑦5 −𝑦6 −𝑦6 𝑦5 + 𝑦6 + 𝑦8 ) ∙ ( 𝜅1 𝜅2 𝜅3 𝜅4 ) = ( 𝐼1 0 0 0 ) The resulting values for the nodes 𝜅1 - 𝜅4 are phasors expressing the amplitude and phase of the respective node at the modulation frequency. The system of linear equations for the dc analysis of a probe with capacitive bypass: S-11 𝑦1 + 𝑦4 0 ( 0 −𝑦4 0 𝑦2 + 𝑦5 0 −𝑦5 −𝑦4 0 𝑦4 + 𝑦6 + 𝑦7 0 −𝑦5 −𝑦6 −𝑦6 𝑦5 + 𝑦6 + 𝑦8 ) ∙ ( 𝜅1 𝜅2 𝜅3 𝜅4 ) = ( 𝐼2 −𝐼3 0 0 ) III. OPTIMIZATION ROUTINES FOR DEFINITION OF ADEQUATE INPUT PARAMETERS A. Determination of input parameters for a probe with resistive bypass We iteratively solved the system of linear equations in Matlab within an interior-point constrained optimization routine (fmincon) to find a workable combination of settings for all three sources with respect to the following conditions: 1. The optimization target was defined to be the minimization of the ratio of aspirated flow to the sum of the flows through the injection and the compensations channel. This makes the optimization settle in a local minimum in vicinity to the defined starting points (𝑝1 = 𝑝2 = −𝑝3 = 100 mbar). 2. We postulate that the pressure 𝑝1 of the source connected to the injection channel to be positive, i.e. flow is injected into this channel. 3. The flux 𝑄7 across flow-path element 7 should be three times larger than the flux 𝑄6 across flow-path element 6. This corresponds to an aspiration-to-injection-ratio of three in a classical probe without bypass. By experience this ratio results in a well-shaped HFC for common gap distances. 4. Further, the potential 𝜑4 should be negative relative to the ambient, to make sure there is inward flow to the gap between probe and sample and no processing liquid leaks to the immersion buffer. 5. The potentials 𝜑1 and 𝜑2 should be equal to suppress flow of processing liquid through the bypass during normal operation at the desired working distance. At a working distance of 20 µm, for example, for the design characterized in Fig. 4D, suitable relative pressures would be 𝑝1 = 54 mbar, 𝑝2 = 120 mbar and 𝑝3 = −100 mbar, total injection/aspiration flow rates of 1.5 µl/min through the injection channel, 3.5 µl/min through the compensation channel and 8 µl/min through the aspiration channel during normal operation. resulting in B. Determination of input parameters for a probe with capacitive bypass The above model of a probe with capacitive bypass is solved within an optimization routine, to find a combination of settings for the sources with respect to following conditions: 1. The optimization target was defined to be the minimization of the ratio of aspirated flow to the dc offset injection flow. This makes the optimization settle in a local minimum in vicinity to the defined starting points (𝑝1 = −𝑝3 = 100 mbar). 2. We postulate that the pressure 𝑝1(𝑡) of the source connected to the injection channel to be greater or equal to zero at all times, i.e. flow is injected into this channel. 3. The flux 𝑄5 across flow-path element 5 should be three times larger than the time averaged flux 𝑄4 across flow-path element 4 to again reach an effective aspiration-to-injection-ratio of three. 4. Further, the time averaged potential 𝜅3(𝑡) should be negative relative to the ambient, to make sure there is an overall inward flow to the gap between probe and sample and no processing liquid leaks to the immersion buffer. For the proposed exemplary design (see Fig. Ap. 3C) for the admittance values of flow path elements of the specific design we analyzed) this analysis results in a constant offset pressure at the input of 40 mbar, which is superimposed by a sinusoidal modulation with an amplitude of 40 mbar, which results in a mean flow of 2.8 µl through the injection channel. At the aspiration a constant differential pressure of -99 mbar is applied, resulting in a mean flow of 9.8 µl/min. IV. MEASUREMENT OF RELATIVE PHASE SHIFTS The measurement setup used for the assessment of the phase shift between the movement of the front and the rear interface in the coupling cavity is depicted in detail in Fig. Ap. 1. As mentioned in the main paper, buffers were required to avoid counter-productive controlling actions of the pressure control system as it would detects unstable pressure levels at its outputs if there were no buffers. The flow sensors in each flow path are not needed in principle, but allowed to counter check the calculations of the resistance of the respective flow path and to monitor the system during the experiment more carefully. The actual relative pressure levels set with the pressure control system during the experiment presented in the main paper in Fig 6B, were: S-12 410 mbar -210 mbar • Buffer 1: • Buffer 2: • Aspiration reservoir: -100 mbar (measured flow rate: 9.1 µl/min) • Compensation reservoir: ambient pressure Fig. Ap. 1. Experimental setup for measuring the gap distance between probe and sample based on the movement of gas/liquid interfaces in the coupling cavity. In addition to the setup required for a probe with a resistive bypass, this setup includes instrumentation required to modulate the pressure in the reservoir connected to the injection channel and a video camera for recording a side view of the probe. S-13 The negative relative pressure in buffer 2 allows the modulation amplitude to be increased. The relative pressures applied in the buffers greatly exceed the modulation amplitude of about 40 mbar suggested by the model. Nevertheless, as the model is in good agreement with the measured aspiration flow and a well-defined HFC was observed through the microscope (see video 1), we assume the actual pressure modulation in the injection reservoir to be in the range of the amplitude suggested by the model. We assume that only small fractions of the relative pressure levels present in the buffers get transferred to the reservoir, considering the dead volume and resistance of the tubing, the valve and the reservoir and the short switching times (250 ms, as the pressure is modulated at 4 Hz). V. CALCULATION OF THE RELATIVE MOVEMENT AMPLITUDE OF THE REAR INTERFACE To estimate the movement amplitude of the rear interface we performed the following steps: • We first estimated the inner pressure of the coupling cavity in a situation with constant injection and aspiration (no modulation) at a gap distance of 20 µm, by comparing the resulting positions of the front and rear interface with our observations from the experiment (see Fig 6C). Each interface adapts a position along the respective taper which results in a curvature of the interface corresponding to the pressure that drops across it. The opening width 𝑑0 of the taper at the resting position of the interface is given by [26]: 𝑑0 = 2 ∙ cos(𝜃 − 𝜓) Δ𝑝 𝛾 2 ∙ cos(𝜃) + ℎ Here, 𝜃=45° is the estimated contact angle between the liquid and the walls of the coupling cavity, 𝜓 is the angle of inclination of the taper (15.5° for the front taper and 3.1° for the rear taper), h=100 µm is the etched depth of the coupling cavity and 𝛾 = 75.75 mN m⁄ is the surface tension of the liquid. As the reservoir connected to the compensation channel was mounted about 5cm above the surface of the immersion liquid surrounding the apex of the probe and no additional pressure was applied to this reservoir, we assume that a hydrostatic pressure of 𝑝𝑐 = 0.05 m ∙ 0.1 ∙ 105 Pa m⁄ = 500 Pa built up in the coupling cavity. With mean relative pressures of 128 Pa at 𝜅1 and of −414 Pa at 𝜅2, the front interface, according to the model, stabilizes at a width 𝑑0𝑓 = 340 µ𝑚 and the rear interface at a width 𝑑0𝑟 = 120 µ𝑚. These interface positions are in good accordance with our experimental observations. • The resting position of the rear interface is re-calculated for each examined gap distance by taking into consideration the calculated relative pressure at 𝜅2 and an internal pressure of the cavity of 𝑝𝑐 = 500 Pa. S-14 • We assume the response of the interface to be linear for small variations of pressure. To find the deviation of the interface from its resting position due to the modulation of the pressure, we evaluate the maximum change of pressure drop across the coupling cavity due to the modulation d𝑝 = max (𝑝𝜅1(𝑡) − 𝑝𝜅2(𝑡)). Then, using the above equation, the total change in position d𝑥 is: d𝑥 = 𝑑0 Δ𝑝 ∙ d𝑝 ∙ 1 tan 𝜓 Fig. Ap. 2. Movement of the front and rear interface in the coupling cavity due to the pressure modulation. A) The opening width of the taper is lower for the rear interface as the pressure drop across this interface is higher and the resulting curvature of the interface is smaller. B) The differential pressure drop across the interface decreases with increasing modulation frequency, as the transfer of the modulation is more efficient at higher frequencies. • Two effects impact d𝑥 across the space of frequencies and gap distances: for small gap distances 𝑑0 Δ𝑝 becomes very small (this derivative has a quadratic dependence of the pressure in the denominator) and thus the movement amplitudes get smaller, too. For higher frequencies, the modulation of the pressure is more efficiently transduced to the aspiration channel and the pressure difference across the cavity d𝑝 becomes smaller (see Fig. Ap. 2B), which also in a reduction of d𝑥. VI. MODIFICATION OF THE MODEL TO FIT THE EXPERIMENTAL DATA When comparing the recorded experimental data with the analytical model presented in the paper, we found that a capacitive element has to be introduced in parallel to Z1 or Z2, in order to account for parasitic capacitances across the fluidic network and, more importantly, a resistive element connected in parallel to the capacitor of the coupling cavity has to be taken into account. This resistive element was present as well in the described experiments: as the liquid has a contact angle to the walls of the coupling cavity lower than 90°, a liquid film covers the walls of the coupling cavity and enables a direct flow of liquid between 𝜅1 and 𝜅2. As demonstrated in Fig. Ap. 3B, this resistive element leads to a significant change in the behavior of the fluidic network: the blue curve represents the behavior of the model fitted to the experimental data (with an additional capacitive element added to Z2 and a resistive element added to Z3) and the brown curve displays the behavior of the same model, but without the resistive element added to Z3. The fitted model (blue curve) originally converges towards 0 for large gap distances and has to be shifted by an offset of 0.23 rad to fit the experimental data. The model without a bypass flow through the cavity (brown curve) approaches a constant value large gap distances. We therefore believe that the most accurate description of our experimental data would be a hybrid model, as the thickness of the liquid film at the walls of the cavity, and thus also the resistance of the bypass through the cavity, changes with the relative pressure that drops across the coupling cavity. We did not further investigate this, as the purpose of this study was to demonstrate the basic feasibility of assessing the probe-sample distance by observing relative phase shifts in the movement of the two interfaces. We expect that the total relative phase shift and thus the sensitivity and measurement range of the presented approach can be significantly improved by making regions of the coupling cavity hydrophobic to prevent a bypass flow of liquid. S-15 Fig. Ap. 3. Adjusted model for ac configuration. A) In order to fit the experimental data additional flow-path elements (red) were included in the model. B) Comparison of a model with parallel resistive element in the bypass (blue) and a model without parallel resistive element in the bypass (brown). The capacitor in parallel to Z2 was kept for both models. C) Admittances of the flow-path elements with capacitive bypass (volume of coupling cavity is 0.36 mm3). The admittance of elements with capacitive characteristics has an imaginary part (displayed in light grey color).
1902.09127	1	1902	2019-02-25T07:58:13	Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells	[ "physics.app-ph", "physics.chem-ph" ]	In this article, a novel hot wire oxidation-sublimation deposition (HWOSD) technique was developed to prepare molybdenum oxide (MoOx) thin films with high quality. Silicon heterojunction (SHJ) solar cells with the HWOSD MoOx as a hole selective transport layer (HSL) were fabricated. Thickness of the MoOx layer and annealing process of the solar cells were studied and optimized. A power conversion efficiency up to 21.10% was achieved on a SHJ solar cell using a 14nm MoOx layer as the HSL. Dark current density-voltage-temperature (J-V-T) characteristics of the SHJ solar cell were measured at the temperatures from 200K to 380K. Transport processes including thermionic emission of electrons over the potential barrier and quantum assisted tunneling of holes through the gap states in the MoOx layer were proposed for the MoOx/n c-Si heterojunction. The investigation of the transport mechanisms provides us a better understanding of the characteristics of the novel SHJ solar cells and it is helpful for us to fully demonstrate the potential of such kind of solar cells in the future.	physics.app-ph	physics	Molybdenum oxide hole selective transport layer by hot wire oxidation-sublimation deposition for silicon heterojunction solar cells Fengchao Li1,2, Yurong Zhou1, Ming Liu1,2, Gangqiang Dong1, Fengzhen Liu1,2, Wenjing Wang3, Donghong Yu4 1 . College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, 100049, Beijing, China 2. Sino-Danish College, University of Chinese Academy of Sciences, 100190, Beijing, China 3. Institute of Electrical Engineering, Chinese Academy of Sciences, 100190, Beijing, China 4. Department of Chemistry and Bioscience, Aalborg University, DK-9220, Aalborg, Denmark Abstract In this article, a novel hot wire oxidation-sublimation deposition (HWOSD) technique was developed to prepare molybdenum oxide (MoOx) thin films with high quality. Silicon heterojunction (SHJ) solar cells with the HWOSD MoOx as a hole selective transport layer (HSL) were fabricated. Thickness of the MoOx layer and annealing process of the solar cells were studied and optimized. A power conversion efficiency up to 21.10% was achieved on a SHJ solar cell using a 14nm MoOx layer as the HSL. Dark current density-voltage-temperature (J-V-T) characteristics of the SHJ solar cell were measured at the temperatures from 200K to 380K. Transport processes including thermionic emission of electrons over the potential barrier and quantum assisted tunneling of holes through the gap states in the MoOx layer were proposed for the MoOx/n c-Si heterojunction. The investigation of the transport mechanisms provides us a better understanding of the characteristics of the novel SHJ solar cells and it is helpful for us to fully demonstrate the potential of such kind of solar cells in the future. Keywords: Hot wire oxidation-sublimation deposition, Molybdenum oxide thin film, Hole selective transport layer, Silicon heterojunction solar cell, Transport mechanisms 1. Introduction More and more attention has been paid to the novel silicon heterojunction (SHJ) solar cells by making use of metal oxides to replace the conventional doped hydrogenated amorphous Si (a-Si:H) thin films as the carrier selective transport layers1-5. Due to the wide band-gap nature, optional work functions and relatively simple fabrication techniques related to the metal oxides, the novel SHJ solar cells show great potential to further improve the efficiency and reduce the cost of c-Si based solar cells3,6. Difference between work functions of the metal oxides and Fermi level of the c-Si leads to a large energy band bending of the c-Si near the interface, which allows only one type of carriers to pass through and inhibits carrier recombination at the interface7. Some metal oxides with high work functions, such as MoOx 3,4, VOx 8-10, WOx 11,12, NiOx 13,14 and CuOx 15,16, can provide a good hole selective transport when they form heterocontacts with c-Si. Similarly, some metal oxides with low work functions, e.g. TiOx 13,17,18，MgOx 19,20 and ZnO21,22, can be used as the electron selective transport layers instead of n-type a-Si:H in c-Si solar cells. In recent years, remarkable achievements have been made on the SHJ solar cells using molybdenum oxide (MoOx) with wide band-gap (3.0-3.3 eV) and high work function (>6 eV) as the HSL5,23-27. Various techniques, such as thermal evaporation3-5, electron beam evaporation20,28, atomic layer deposition29,30, sputtering31,32 and solution-processed method6, etc. , are available in preparation of MoOx thin films. By using thermal evaporated MoOx thin films as the HSL, silicon heterojunction solar cells with the power conversion efficiencies up to 22.5% were fabricated by Jonas Geissbuhler et al.3. Jing Yu et al.20 prepared the MoOx films using electron beam evaporation and achieved an efficiency of 14.2% on a plane SHJ solar cell with the structure of MoOx/n-type c-Si/MgO. A solution-processed method was reported by Jingnan Tong et al.6 to form the MoOx layers by spin-coating hydrogen molybdenum bronze solution on crystalline silicon wafer surfaces. However, properties of the MoOx thin films and performance of the devices need to be further improved. To promote the commercialization of the novel SHJ solar cells in the future, a simple and scalable production technique capable of fabricating high quality MoOx thin films is needed. In this work, a hot wire oxidation-sublimation deposition (HWOSD) technique was developed to fabricate amorphous molybdenum oxide thin films with good photoelectric properties. SHJ solar cells were fabricated making use of the HWOSD MoOx as the HSL. Investigations and optimizations of the device structure, interface passivation and annealing process were carried out. A power conversion efficiency up to 21.10% was achieved for a champion SHJ solar cell with the structure of Ag/ITO/n-type a-Si:H/ intrinsic a-Si:H/n-type textured c-Si/intrinsic a-Si:H/MoOx/Ag. Dark J-V-T characteristics were analysed to understand the transport mechanisms of the novel heterojunction solar cells. 2. The hot wire oxidation-sublimation deposition technique A schematic diagram of the hot wire oxidation-sublimation deposition (HWOSD) technique is presented in Fig. 1. In a deposition chamber with oxygen atmosphere, molybdenum wires is electrically heated to high temperature. MoOx molecules are generated on the surface of hot molybdenum wires and are sublimated directly into the chamber. The MoOx molecules adsorb, diffuse, coalescence and finally form the MoOx thin films on the substrate. Fig.1 Schematic diagram of hot wire oxidation-sublimation deposition technique. The HWOSD technique is novel and it has many advantages over thermal evaporation3-5 in the preparatin of MoOx films. For example, by designing the structure of hot wires, for example increasing the length of molybdenum wire and arranging the multiple molybdenum wires, MoOx films with large area can be deposited by HWOSD; The MoOx is generated while sublimating in HWOSD, the deposition rate can be increased by raising oxygen pressure and/or the temperature of molybdenum wire without the problem of the powder spattering in the thermal evaporation. Its characteristics of large area and high speed are beneficial to the industrialization. Moreover, the HWOSD technique is based on high melting point of molybdenum and low boiling point of Molybdenum oxide. Therefore, it is suitable to other materials with similar characteristics, such as WOx and VOx. 3. Results and discussion 3.1 Characteristics of the MoOx thin films prepared by HWOSD During the process of hot wire oxidation-sublimation deposition, hot wire temperature and oxygen pressure are two important parameters affecting the opto-electronic properties of the deposited MoOx thin films. Under the optimized hot wire temperature (1095±5℃) and oxygen pressure (0.2Pa), an average transmittance of 94.2% in the wavelength range of 400-1100 nm can be obtained on a 15nm MoOx thin film. (The effect of the oxygen pressure on the transmittance of the MoOx thin films is given in Figure S1). The dark conductivity of the optimized MoOx film is 1.6 ×10-6 S/cm. The XRD spectrum shows that the HWOSD MoOx thin film is in an amorphous structure (Figure S2). Fig. 2 The Mo 3d core level XPS spectrum for a MoOx film fitted with multiple Voigt peaks (shaded areas) to quantify the contribution of different oxidation states. Figure 2 shows the XPS spectrum of the Mo 3d core level in MoOx thin film. The two major peaks, with binding energies of 233.3 eV and 236.4 eV, correspond to the Mo6+ 3d5/2 and 3d3/2, respectively6,26. And the minor ones centered at 232.0 eV and 235.0 eV can be attributed to Mo5+. The estimated O/Mo atomic ratio of the MoOx thin film is about 2.94, which closes to the stoichiometric ratio of 3. The relatively high oxygen content in the MoOx thin films usually leads to a high work function25,26 . 3.2 Surface morphologies and passivation effect of MoOx on Si substrates SEM images of the MoOx thin films deposited on Si wafers are shown in Fig. 3. Figure 3 (a) and (b) exhibit the top-view and cross-sectional SEM images of MoOx films on polished Si substrate, respectively. It can be seem that compact MoOx films with high thickness uniformity were formed on the polished Si substrates by using HWOSD. The SEM images of pyramid-shaped silicon surfaces covered with HWOSD MoOx thin films are shown in Fig. 3 (c) and (d). Conformal coverage of the MoOx thin films on the random pyramids is realized. The nice coverage characteristics can be confirmed by the elemental EDS mappings of O and Mo (Figure S3). Fig. 3 (a) Top-view SEM image of MoOx (25nm) on polished Si substrate. (b) Cross-sectional SEM image of MoOx (70 nm) on polished Si substrate. (c, d) SEM images of MoOx (70 nm) on textured Si wafers. Figure 4 shows the measured effective lifetimes for n-type CZ Si wafers sandwiched between i a-Si:H thin film or i a-Si:H/MoOx combination layer as a function of excess carrier density. Compared with the effective lifetimes of the a-Si:H passivated c-Si wafer, the a-Si:H/MoOx combination layer passivated sample shows enhanced lifetimes in the whole carrier injection concentration range of 7×1014 cm-3~1×1016cm-3 and a maximum lifetime up to 1.3ms is achieved. The results demonstrate the effective field passivation effect of the molybdenum oxide film on the surface of c-Si. The high work function of the MoOx layer produces a large band bending of the n-type c-Si surface and thus reduces the surface recombination effectively. Fig. 4 Measured effective lifetimes for samples with the structures of a-Si:H/c-Si/a-Si:H and MoOx/a-Si:H/c-Si/a-Si:H/MoOx as a function of excess carrier density in the range of 7×1014 cm-3~1×1016cm-3. 3.3 Optimization of the SHJ solar cells with MoOx as HSL The structure of the heterojunction solar cells with MoOx HSL is shown as Fig. 5(a). The illuminated side (front side) structure of the devices is set to be Ag grid/ITO/n-type a-Si:H/ intrinsic a-Si:H. The rear side structure is Ag/MoOx/intrinsic a-Si:H. Fig. 5 (a) Cross-sectional schematic of the heterojunction solar cells with MoOx HSL. (b) Photovoltaic parameters of the SHJ solar cells varied with different thicknesses of MoOx HSL. Effective interface passivation plays critical role in increasing the performance of SHJ solar cells. We found that SHJ solar cells with MoOx HSL directly deposited on Si substrates usually show much worse performance than a traditional SHJ solar cell, implying a serious recombination of photo-generated carriers at the MoOx/c-Si interface. Different passivation layers, including intrinsic a-Si:H thin film, UV/O3 photo-oxidized SiOx, and the combination of a-Si:H and SiOx, were adopted to passivate the c-Si substrates before the deposition of MoOx (Table S1). Compared with the solar cell without any passivation layer, all the passivation methods we tried improved the performances of the solar cells to some extent. Among them, the intrinsic a-Si:H layer deposited using PECVD exhibits the best passivation effect. The UV/O3 treatment is quite simple compared with the a-Si:H deposition technique. However, the passivation effect of the UV/O3 photo-oxidized SiOx layer is less than satisfactory. Similar to reported in the literature3, we also noticed that the SiOx layer may lead to the deterioration of the annealing performance of a SHJ solar cell with MoOx HSL. Therefore, we eliminated the UV/O3 photo-oxidized SiOx and used the a-Si:H as the passivation layer at present stage. Using intrinsic a-Si:H as the interface passivation layer, influence of the MoOx HSL thickness on the photovoltaic parameters of the SHJ solar cells was investigated as shown in Fig. 5(b). Increasing the MoOx HSL thickness from 10 nm to 14 nm raises the Voc of the solar cells by 13.5 mV (from 683.6mV to 697.1mV). However, the Voc goes down instead of rising as we further increased the MoOx HSL thickness. And, it drops to 675.8mV at a MoOx thickness of 71 nm. In the case that the thickness of the MoOx HSL is too small, the space charge region near the c-Si surface may not be well formed, which is not favorable for the separation of the photo-generated carriers. However, as for the condition of excessive thickness, the consequentially enhanced recombination in the MoOx layer leads to the decline of the open circuit voltage. At the same time, the reduced carrier collection causes a rapid drop in the short circuit current density (Jsc) as Fig. 5(b) shows. Fill factor (FF) is affected simultaneously by energy band structure and series resistance. The small FF in the 10nm MoOx condition could also be a consequence of the insufficient build-up of the space charge region. When the thickness of MoOx is between 14nm and 55nm, the relatively large built-in voltage and the almost invariable series resistance keep the FF at a relatively high value. When the thickness of the MoOx reaches 70nm, the high series resistance results in a significant reduction in FF. Considering all the photovoltaic parameters of the series of SHJ solar cells, we determined an optimal MoOx thickness of 14nm. In this case, MoOx with high work function and sufficient thickness promotes the establishment of the space charge region near the c-Si surface, and extra carrier recombination related to excessive MoOx thickness can be avoided. A power conversion efficiency of 18.11% was achieved for the SHJ solar cell with a 14nm MoOx as the HSL. Fig.6 (a) Influence of annealing process on Voc and FF of the SHJ solar cells with MoOx HSL. (b) Light J-V characteristic of a champion SHJ solar cell with MoOx HSL. Post-annealing is a common process during the fabrication of conventional SHJ solar cells, which can improve the overall performance of the devices. However, post-annealing tends to show a bad effect on the SHJ solar cells with metal oxides (such as MoOx, WOx, VOx) as the hole selective transport layer3,7. Possible reasons are that the work functions of metal oxides and the characteristics of the interface between the metal oxides and the c-Si have been changed by post-annealing 33. In this paper, a preliminary investigation on the annealing process of the SHJ solar cells with MoOx HSL was carried out and the influences of different annealing processes on the Voc and FF of the SHJ solar cells are illustrated in Fig. 6 (a). As a reference, the Voc and FF of an as-prepared SHJ solar cell without undergoing any annealing process are also included as shown in red symbols. Similar to reported in the literature, annealing after the fabrication of the whole device (post-annealing, 190°C, 5min) leads to deterioration in device performance (green symbols). MoOx-annealing (blue symbols) in Fig. 6 (a) refers to an annealing process that was carried out just after the preparation of MoOx and before the deposition of silver electrode. Voc and FF of the solar cell are further reduced with MoOx-annealing compared with the post-annealing process, indicating serious damage to the exposed MoOx layer was caused by the MoOx-annealing process. In order to avoid the annealing damage to the MoOx layer, annealing process was carried out before the preparation of the MoOx layer, namely pre-annealing. The solar cell performance, disappointingly, is worse instead of getting better. The possible reason is that an a-Si:H/SiOx double-layer is formed during the pre-annealing process in the air atmosphere. Therefore, we removed the oxidation layer on the amorphous silicon by HF solution (2%) treatment after the pre-annealing process and immediately prepared the MoOx HSL and the metal back electrode to finish the device fabrication. Just as expected, the performance of the pre-annealing-HF sample shows a remarkable improvement as depicted in Fig. 6(a). Figure 6 (b) is the light J-V curve of an optimal solar cell fabricated with the pre-annealing-HF process. An efficiency of 21.10% with Voc of 713 mV, Jsc of 37.50 mA/cm2 and FF of 78.92% was achieved for the champion SHJ solar cell with a MoOx HSL. 3.4 Transport mechanisms of the SHJ solar cells with MoOx HSL To further improve the performance of the SHJ devices, it is essential to understand the mechanisms governing charge carrier transport of the novel heterojunction. It is well known that an analysis of the dark J-V-T characteristics can provide a deep understanding of the transport mechanisms. Figure 7 (a) shows the dark J-V curves of a SHJ solar cell with the structure of Ag/ITO /n+ a-Si:H /i a-Si:H/n c-Si/i a-Si:H/ MoOx/Ag measured at temperatures from 200K to 380K. The corresponding photovoltaic parameters of the device are Voc=710mV, FF=77.0%, Jsc=37.3mA/cm2 and Eff=20.4%. According to the universal rectification models, the relation between the current density and the applied voltage can be written as an empirical equation: (1) where J0 is the saturation current density and the exponential factor A depends on the transport mechanisms. Based on equation (1), the J-V curves were fitted in a lower voltage range (0.1 - 0.4V), in which the transport mechanisms can be better investigated. By studying the temperature dependences of the fitting parameters J0 and A in equation (1) (Figure S4), we found that an approximate linear relationship between ln(J0) and 1/kT can be determined. However, A does not change significantly in the whole temperature range and the A and 1/kT relationship seriously deviates from linearity in both high and low temperature regions. According to the empirical expression A=q/nkT, where q is the electron charge, n the diode ideality factor, k the Boltzmann's constant, T the absolute temperature, no unified ideality factor n can be determined in the entire temperature range. For a relatively narrower temperature region of 250K<T<330K (35.0<1/kT<46.2), fairly large diode ideality factor values (3.51~3.93) can be obtained. In the traditional SHJ solar cells, large n is usually considered to be a signal of serious interface recombination which certainly degrades the Voc 34. In this paper, the contradiction between the large n and quite high Voc (710mV) of the novel SHJ device implies different transport mechanisms from the traditional ones. Other transport channels, like tunnel, probably play important roles in the carrier transportation of the novel SHJ solar cells. ]1[0AVeJJ Figure 7 (a) Dark J-V curves of a novel SHJ solar cell measured at the temperatures from 200K to 380K. (b) Experimental (hollow symbols) and fitting (J=JTe+JTu, solid lines) dark J-V curves under forward bias for the novel SHJ solar cell under three temperatures of 200K, 300K and 360K. The green dashed and dotted lines respectively represent the fitting JTe (majority-carrier processes a and b) and JTu (minority-carrier process c) for the J-V curve measured under 300K. (c) Schematic energy band structures of the MoOx/i a-Si:H/n c-Si heterocontact under forward bias. Three transport processes, including thermionic emission of electrons, thermal assisted tunneling of electrons and tunneling of holes are denoted by a, b, and c, respectively. (d) Schematic energy band structures of the heterocontact under illumination. Considering the high work function (>6eV) and high density of gap states 5, it is more appropriate to think of the MoOx/i characteristics of amorphous MoOx a-Si:H/n c-Si heterocontact as a Schottky junction, whose energy band structures under forward bias and illumination are depicted in Fig. 7 (c and d). Three main transport processes, including thermionic emission of electrons, thermal assisted tunneling of electrons and quantum assisted tunneling of holes are denoted by a, b, and c, respectively. In both a and b processes, thermionic activation of majority carriers is involved. Therefore, we use a total majority-carrier (electron) thermionic current density JTe to represent the thermionic emission and thermal assisted tunneling processes. Considering the series resistance Rs at the same time, JTe can be expressed as (2) where Bn is the effective barrier height for electrons, C(T) is a temperature dependent pre-factor. The process c in Fig. 7(c) presents the tunneling process of holes. The current density JTu can be expressed as 35,36 (3) In this expression, E0 is named as tunneling barrier energy and it corresponds to the almost invariable slopes of the dark J-V curves at low bias as Fig. 7(a) shows. In the following fittings, E0 is simplified to be a constant. qA is the difference between the top of the valence band (TVB) of c-Si surface and the Fermi lever of Ag electrode, as shown in Fig. 7(c). Holes tunnel through the gap states of the MoOx layer into the TVB of c-Si and then recombine with electrons. It is actually a minority-carrier behavior. The total current density J is given by the sum of JTe and JTu. Three forward J-V curves measured at temperatures of 200K, 300K, and 360K were fitted according to J= JTe+JTu, as shown in Fig. 7(b). Except for the very low voltage region, basic agreement between the measured and the fitted curves in the wide voltage range can be obtained. At this time, a more reasonable ideality factor of n=1.2, which is matched with the high Voc, is obtained. And the fitting results for E0, qϕA, and qϕBn are 0.087eV, 0.31eV, and 0.79eV, respectively. The sum of the fitted qϕA and qϕBn is 1.1eV, which coordinates with the band gap of c-Si. The large qϕBn indicates a strong band bending at the n-type c-Si surface, which makes the surface inversion and promotes the collection of photo-generated electrons, as shown in Fig 7(d). The slight deviation between the fitting curves and the experimental ones in the very low voltage region is }1])({exp[1nkTJR-VqJJsSTe)exp()(1kTqTCJBnS}1])({exp[02EJRVqJJsSTu)exp()(2kTqTBJAS probably related to the contributions from shunt resistance and recombination processes34. To better understand the respective contributions of JTu and JTe on the total J-V curve, the fitted JTu and JTe for the J-V curve measured under 300K, as an example, are depicted in dashed and dotted lines in Fig. 7 (b) . It can be seem that JTe starts to play a major role as V>0.6V. In the case of lower forward bias (V<0.5V), the tunnel current density JTu dominates the J-V curve and causes a lower slope of the plot of Log(J) versus V. The high defect density in the band gap of amorphous MoOx makes the tunneling process easily and the minority current density JTu is larger than that of a typical metal/Si Schottky junction. This tunneling channel is critical important for the carriers collection under illumination. Photo-generated holes can be effectively collected through this tunneling channel as shown in Fig. 7 (d), which is beneficial to obtain high open-circuit voltage. 4. Conclusions The hot wire oxidation-sublimation deposition method is demonstrated to be a promising technique for preparation of high-quality MoOx films with uniform thickness, compact structure, nice photoelectric properties and conformal coverage on textured Si substrates. Novel silicon heterojunction solar cells with the HWOSD MoOx thin films as the HSL were successfully fabricated. Finally, an efficiency of 21.10% was achieved for the champion SHJ solar cell with a MoOx HSL fabricated by the scalable HWOSD technique. Analysis of the dark J-V-T characteristics shows that tunneling of holes through the gap states of the MoOx layer causes the low slope of the plot of Log (J) versus V at low voltage range (0.1V - 0.4V). Different from the traditional SHJ solar cells, the low Log(J)-V slope or high ideality factor n is no longer a sign of low Voc for the novel SHJ solar cell. Voc as high as 710 mV can be achieved for the novel SHJ solar cell. The tunneling channel in valence band plays an important role in holes collection under illumination. Besides the advantages of reducing light absorption loss and lowing HSL fabrication costs, the nature of large build-in voltage (represented by high Bn) and effective carrier collection makes the MoOx/c-Si heterojunction inherently possess high efficiency potential. More research work is needed to reveal the potential of the novel SHJ solar cells. 5. Experimental details 5.1 Preparation of MoOx thin films by HWOSD During the deposition, the substrate temperature was lower than 70℃. The molybdenum wires with a purity of 99.995% and a diameter of 1 mm were used. The hot wire temperature, oxygen flow rate and deposition pressure were optimized to be 1095±5℃, 4 sccm and 0.2 Pa, respectively. 5.2 Fabrication of silicon heterojunction solar cells N-type <100> float zone (FZ) silicon wafers with a thickness of 250 μm and a resistivity of 1 to 5 Ω·cm were used as the substrates. Alkaline texturing and isotropic etching were carried out in succession to form random pyramids with less sharp tops on both sides of the c-Si wafers. After texturing, the c-Si substrates were chemically cleaned according to the standard RCA procedure. Before proceeding to the next step, the textured silicon wafers were dipped in 2% hydrofluoric acid for 1 min to remove the surface oxide layer. The illuminated side (front side) structure of the devices is set to be Ag grid/ITO/n-type a-Si:H/ intrinsic a-Si:H. Intrinsic (~7 nm) and n-type (~10 nm) a-Si:H as the passivation and the electron selective transport layer were successively deposited on one side of the c-Si substrates by means of plasma enhanced chemical vapor deposition (PECVD) under a substrate temperature of about 200 °C. The front electrode consists of an indium tin oxide layer (ITO 80nm) by magnetron sputtering and a Ag grid by thermal evaporation. The rear side structure of the SHJ solar cells is Ag/MoOx/intrinsic a-Si:H. The intrinsic a-Si:H (i a-Si:H) thin film (~6nm) deposited by PECVD was also used for interface passivation. The MoOx thin film, as the HSL to replace the traditional p-type a-Si:H, was prepared by hot wire oxidation-sublimation deposition. Thermal evaporated Ag film was used as the rear electrode. The active area of the devices is 1 cm2. 5.3 Characterization of thin films and devices Thicknesses of MoOx and ITO thin films were measured using a surface profilometer (ERUKER-DektakXT). Surface morphologies and elemental analysis of the MoOx thin films deposited on c-Si wafers were characterized using scanning electron microscope (SEM, Hitachi SU8010) and energy dispersive spectrometer (EDS, Bruker 6-30). Elemental compositions of the MoOx films were characterized using X-ray photoelectron spectroscopy (XPS, Thermo Scientific ESCALAB250Xi) under ultra-high vacuum (<2×10-9 mbar). Minority carrier lifetimes of the passivated c-Si wafers were evaluated using the quasi-steady-state photo conductance (QSSPC Sinton WCT-120). Light current density-voltage (J-V) curves of the solar cells were obtained under AM1.5 (100 mW/cm2, 25℃) illumination. Dark J-V-T characteristics of the SHJ solar cells were measured at the temperatures from 200K to 380K. Acknowledgements This work was supported by the National Natural Science Foundation of China (No.61604153 and No.61674150). Support from the Sino-Danish Center for Education and Research (SDC) is fully acknowledged. References 1. Gao PQ, Yang ZH, He J, et al. Dopant-Free and Carrier-Selective Heterocontacts for Silicon Solar Cells: Recent Advances and Perspectives. Adv Sci. 2018;5(3):20. 2. Yang XB, Aydin E, Xu H, et al. Tantalum Nitride Electron-Selective Contact for Crystalline Silicon Solar Cells. Adv Energy Mater. 2018;8(20):7. 3. Geissbuhler J, Werner J, de Nicolas SM, et al. 22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector. Appl Phys Lett. 2015;107(8):5. 4. Bullock J, Hettick M, Geissbuhler J, et al. Efficient silicon solar cells with dopant-free asymmetric heterocontacts. Nat Energy. 2016;1:7. 5. Battaglia C, Yin XT, Zheng M, et al. Hole Selective MoOx Contact for Silicon Solar Cells. Nano Lett. 2014;14(2):967-971. 6. Tong JN, Wan YM, Cui J, Lim S, Song N, Lennon A. Solution-processed molybdenum oxide for hole-selective contacts on crystalline silicon solar cells. Appl Surf Sci. 2017;423:139-146. 7. Garcia-Hernansanz R, Garcia-Hemme E, Montero D, et al. Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer. Sol Energy Mater Sol Cells. 2018;185:61-65. 8. Almora O, Gerling LG, Voz C, Alcubilla R, Puigdollers J, Garcia-Belmonte G. Superior performance of V2O5 as hole selective contact over other transition metal oxides in silicon heterojunction solar cells. Sol Energy Mater Sol Cells. 2017;168:221-226. 9. Wu WL, Bao J, Jia XG, et al. Dopant-free back contact silicon heterojunction solar cells employing transition metal oxide emitters. Phys Status Solidi-Rapid Res Lett. 2016;10(9):662-667. 10. Masmitja G, Gerling LG, Ortega P, et al. V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells. J Mater Chem A. 2017;5(19):9182-9189. 11. Mews M, Korte L, Rech B. Oxygen vacancies in tungsten oxide and their influence on tungsten oxide/silicon heterojunction solar cells. Sol Energy Mater Sol Cells. 2016;158:77-83. 12. Mews M, Lemaire A, Korte L. Sputtered Tungsten Oxide as Hole Contact for Silicon Heterojunction Solar Cells. IEEE J Photovolt. 2017;7(5):1209-1215. 13. Xue MY, Islam R, Chen YS, et al. Carrier-selective interlayer materials for silicon solar cell contacts. 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Dual Functional Electron-Selective Contacts Based on Silicon Oxide/Magnesium: Tailoring Heterointerface Band Structures while Maintaining Surface Passivation. Adv Energy Mater. 2018;8(16):10. 20. Yu J, Fu YM, Zhu LQ, et al. Heterojunction solar cells with asymmetrically carrier-selective contact structure of molybdenum-oxide/silicon/magnesium-oxide. Sol Energy. 2018;159:704-709. 21. Boix PP, Ajuria J, Etxebarria I, Pacios R, Garcia-Belmonte G, Bisquert J. Role of ZnO Electron-Selective Layers in Regular and Inverted Bulk Heterojunction Solar Cells. J Phys Chem Lett. 2011;2(5):407-411. 22. Zhang WY, Meng QL, Lin BX, Fu ZX. Influence of growth conditions on photovoltaic effect of ZnO/Si heterojunction. Sol Energy Mater Sol Cells. 2008;92(8):949-952. 23. Meyer J, Hamwi S, Kroger M, Kowalsky W, Riedl T, Kahn A. Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications. Adv Mater. 2012;24(40):5408-5427. 24. Guo YZ, Robertson J. Origin of the high work function and high conductivity of MoO3. Appl Phys Lett. 2014;105(22):4. 25. Greiner MT, Chai L, Helander MG, Tang WM, Lu ZH. Transition Metal Oxide Work Functions: The Influence of Cation Oxidation State and Oxygen Vacancies. Adv Funct Mater. 2012;22(21):4557-4568. 26. Han BC, Gao M, Wan YZ, Li Y, Song WL, Ma ZQ. Effect of post-annealing on the properties of thermally evaporated molybdenum oxide films: Interdependence of work function and oxygen 2018;75:166-172. to molybdenum ratio. Mater Sci Semicond Process. 27. Battaglia C, de Nicolas SM, De Wolf S, et al. Silicon heterojunction solar cell with passivated hole selective MoOx contact. Appl Phys Lett. 2014;104(11):5. 28. Sivakumar R, Gopalakrishnan R, Jayachandran M, Sanjeeviraja C. Characterization on electron beam evaporated alpha-MoO3 thin films by the influence of substrate temperature. Curr Appl Phys. 2007;7(1):51-59. 29. Macco B, Vos MFJ, Thissen NFW, Bol AA, Kessels WMM. Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells. Phys Status Solidi-Rapid Res Lett. 2015;9(7):393-396. 30. Ziegler J, Mews M, Plasma-enhanced atomic-layer-deposited MoO (x) emitters for silicon heterojunction solar cells. Appl Phys A-Mater Sci Process. 2015;120(3):811-816. Kaufmann K, et al. 31. Mohamed SH, Venkataraj S. Thermal stability of amorphous molybdenum trioxide films prepared at different oxygen partial pressures by reactive DC magnetron sputtering. Vacuum. 2007;81(5):636-643. 32. Pachlhofer JM, Jachs C, Franz R, et al. Structure evolution in reactively sputtered molybdenum oxide thin films. Vacuum. 2016;131:246-251. 33. Zhang T, Lee CY, Wan YM, Lim S, Hoex B. Investigation of the thermal stability of MoOx as hole-selective contacts for Si solar cells. J Appl Phys. 2018;124(7):7. 34. Schulze TF, Korte L, Conrad E, Schmidt M, Rech B. Electrical transport mechanisms in a-Si:H/c-Si heterojunction solar cells. 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1912.07082	1	1912	2019-12-15T18:24:18	An Environmentally Stable and Lead-Free Chalcogenide Perovskite	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	Organic-inorganic halide perovskites are intrinsically unstable when exposed to moisture and/or light. Additionally, the presence of lead in many perovskites raises toxicity concerns. Herein is reported a thin film of BaZrS3, a lead-free chalcogenide perovskite. Photoluminescence and X-ray diffraction measurements show that BaZrS3 is far more stable than methylammonium lead iodide (MAPbI3) in moist environments. Moisture- and light-induced degradations in BaZrS3 and MAPbI3 are compared by using simulations and calculations based on density functional theory. The simulations reveal drastically slower degradation in BaZrS3 due to two factors - weak interaction with water, and very low rates of ion migration. BaZrS3 photo-detecting devices with photo-responsivity of ~46.5 mA W-1 are also reported. The devices retain ~60% of their initial photo-response after 4 weeks in ambient conditions. Similar MAPbI3 devices degrade rapidly and show ~95% decrease in photo-responsivity in just 4 days. The findings establish the superior stability of BaZrS3 and strengthen the case for its use in optoelectronics. New possibilities for thermoelectric energy conversion using these materials are also demonstrated.	physics.app-ph	physics	An Environmentally Stable and Lead-Free Chalcogenide Perovskite Tushar Gupta1, Debjit Ghoshal2, Anthony Yoshimura3, Swastik Basu1, Philippe K. Chow4, Aniruddha S. Lakhnot1, Juhi Pandey5, Jeffrey M. Warrender4, Harry Efstathiadis6, Ajay Soni5, Eric Osei-Agyemang7, Ganesh Balasubramanian7, Shengbai Zhang3, Su-Fei Shi2, Toh-Ming Lu3, Vincent Meunier3,8, and Nikhil Koratkar1,8* 1Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA 2Department of Chemical and Biological Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA 3Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA 4U.S. Army Combat Capabilities Development Command - Armament Center - Benet Laboratories, Watervliet NY 12189, USA 5School of Basic Sciences, Indian Institute of Technology Mandi, Mandi 175005, HP, India 6Colleges of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, NY 12203, USA 7Department of Mechanical Engineering & Mechanics, Lehigh University, Bethlehem, PA 18015, USA 8Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA *Corresponding author: Nikhil Koratkar Email: [email protected] 1 Abstract Organic-inorganic halide perovskites are intrinsically unstable when exposed to moisture and/or light. Additionally, the presence of lead in many perovskites raises toxicity concerns. Herein is reported a thin film of BaZrS3, a lead-free chalcogenide perovskite. Photoluminescence and X-ray diffraction measurements show that BaZrS3 is far more stable than methylammonium lead iodide (MAPbI3) in moist environments. Moisture- and light- induced degradations in BaZrS3 and MAPbI3 are compared by using simulations and calculations based on density functional theory. The simulations reveal drastically slower degradation in BaZrS3 due to two factors -- weak interaction with water, and very low rates of ion migration. BaZrS3 photo-detecting devices with photo-responsivity of ~46.5 mA W-1 are also reported. The devices retain ~60% of their initial photo-response after 4 weeks in ambient conditions. Similar MAPbI3 devices degrade rapidly and show ~95% decrease in photo- responsivity in just 4 days. The findings establish the superior stability of BaZrS3 and strengthen the case for its use in optoelectronics. New possibilities for thermoelectric energy conversion using these materials are also demonstrated. 2 Introduction Over the last decade, organic-inorganic halide perovskite (OIHP) materials have taken center stage in the lively arena of optoelectronics research.[1-4] These perovskite compounds have the general chemical formula ABX3 in their 3D form, where A is a small organic cation such as methylammonium (CH3NH3 +) or formamidinium (HC(NH2)2 +), B is a metal cation such as lead (Pb2+) or tin (Sn2+), and X is a halide ion such as iodide (I-) or bromide (Br-). In 2009, Kojima et al. introduced methylammonium lead halides (CH3NH3PbX3) for photovoltaics.[5] Since then, OIHP materials have been the subject of many studies that have led to a broad array of applications such as solar cells,[1] light-emitting diodes,[4] and photon detectors.[2,6,7] Despite their outstanding performance in optoelectronic applications, there are two major challenges that are inherent to these OIHP materials. The first challenge is their poor stability under common environmental conditions. Moisture is notorious for wreaking havoc on OIHP films. Methylammonium lead iodide (CH3NH3PbI3 or MAPbI3) is rapidly attacked by molecular H2O, which causes it to decompose into PbI2, CH3NH2 and HI.[8] Instability of OIHP materials under illumination is another significant limitation. Kim et al. have shown that illumination (i.e., light irradiation with energy higher than the bandgap) of MAPbI3 drives iodine out of the crystal while creating iodine vacancies in the lattice.[9] This exodus of iodine, if unimpeded, can lead to the breakdown of MAPbI3. Such ion migration in OIHP materials is considered an "intrinsic problem" that cannot be overcome simply by device encapsulation.[10] The second major challenge is that several members of the OIHP family contain lead (Pb), which is highly toxic and harms the environment. Specifically, PbI2, the decomposition product of MAPbI3, is carcinogenic. Efforts to replace Pb with Tin (Sn) in OIHP materials were initially promising but have had limited success in terms of stability.[11,12] This is primarily due to the instability of Sn in its 2+ oxidation state. In the face of these challenges, it is necessary to identify and develop lead-free perovskites that are intrinsically stable under light irradiation and when exposed to the environment. 3 First principles calculations have indicated that chalcogenide perovskites are promising candidates for optoelectronics.[13] These perovskites were first synthesized decades ago, but most of the previously published works focused on studying the crystal structure of these materials.[14-18] Chalcogenide perovskites are based on elements that are more environmentally friendly than Pb, but no optical nor electronic data were reported for these materials until relatively recently. Perera et al. reported that the bandgap of bulk barium zirconium oxysulfides could be tuned in the range of 1.75 -- 2.87 eV by varying the sulfur content in BaZr(OxS1-x)3.[19] Niu et al. demonstrated iodine-catalyzed solid-state reaction as a new synthesis route and characterized the optical behavior of bulk BaZrS3 and two SrZrS3 polymorphs.[20] They found that these materials exhibit photoluminescence quantum efficiency and quasi-Fermi level splitting that compare well with existing high-efficiency photovoltaic materials. Although chalcogenide perovskites have existed for decades and the basic optical properties of some of these materials are known, very little is known about chalcogenide perovskite thin films or optoelectronic devices. A detailed study of their environmental stability is also missing. Herein we report a thin-film of BaZrS3 -- a lead-free chalcogenide perovskite -- along with an optoelectronic device based on it. We also report a quantitative comparison of BaZrS3 and MAPbI3 in terms of environmental stability. When compared with MAPbI3, the thin film of BaZrS3 showed superior stability by retaining its optoelectronic and structural character after over a month of exposure to ambient conditions. Even an aggressive environment of steam that rapidly destroyed MAPbI3 was tolerated well by BaZrS3. Using calculations based on density functional theory (DFT), we show that weak interactions with water and low ion-migration rates are responsible for the superior resistance of BaZrS3 to water- and light-induced degradation, respectively. Our calculations provide a clear and unambiguous explanation as to why traditional perovskites (MAPbI3) are unstable and why chalcogenide perovskites (BaZrS3) are not. Finally, we fabricated and tested photo-detector devices using the BaZrS3 thin-film material. The devices exhibited an initial mean photo-responsivity of ~46.5 4 mA W-1, which decreased by ~40% after the devices were subjected to ambient conditions for 4 weeks. This is in stark contrast to similar MAPbI3 photo-sensing devices, which rapidly succumbed to the environment and exhibited ~95% loss in photo-responsivity in just 4 days. Our study highlights the opportunities for further exploration of chalcogenide perovskite materials in optoelectronics. Additionally, our simulations indicate an enhancement in Seebeck coefficient and decrease in thermal conductivity with increasing temperatures for BaZrS3, which could also open up exciting new applications for such materials in thermoelectric devices. Results and Discussion We used a two-step approach to deposit the chalcogenide perovskite film. In the first step, a thin film of barium zirconium oxide (BaZrO3) was made by chemical solution deposition. Briefly, a solution of barium acetate, zirconium (IV) acetylacetonate and polyvinyl butyral in propionic acid was spin-coated on a 1cm × 1cm quartz substrate followed by annealing (Materials and Methods) in air to obtain the BaZrO3 film. The oxide thin film appeared colorless and transparent to the eye under white light. In the second step, the oxide film was "sulfurized" by heating it under a flowing mixture of carbon disulfide and nitrogen in a tube furnace. A schematic illustration of the sulfurization process is shown in Figure 1a. Additional details of the process are provided in Materials and Methods. A brown film was obtained after the sulfurization step -- a photograph of an oxide film alongside a sulfurized film is shown in Figure 1b. An X-ray diffraction (XRD) measurement of the sulfurized film indicated that it was polycrystalline. The XRD pattern is shown in Figure 1c. Five significant peaks can be seen, and they align closely with the five strongest lines in the reference pattern for BaZrS3 (ICDD 00-015-0327). No significant peaks for other phases were found. This indicates that the sulfurized film was BaZrS3 with the orthorhombic distorted perovskite crystal structure and Pnma space group. The slight differences between peak and reference line positions can be 5 attributed to residual strain due to the dissimilar substrate. The background signal in Figure 1c originates from the amorphous quartz substrate. The XRD pattern of the precursor oxide (i.e., BaZrO3) film is provided in Figure S1 (Supporting Information). Figure 1. Synthesis and characterization of BaZrS3 thin film. a) Schematic illustration of the sulfurization process. b) Photograph of oxide film (left) and sulfurized film (right) on quartz substrates. c) XRD pattern of freshly prepared sulfurized film on quartz substrate. The dashed vertical lines represent lines from the XRD reference for BaZrS3 (ICDD 00-015-0327). d) Raman spectra of sulfurized film at 300 K, 140 K, and 10 K. e) SEM images of surface of BaZrS3 film. Scale bars are 1 µm. f) Cross-sectional SEM image of BaZrS3 thin film on quartz. Scale bar is 200 nm. Pt was deposited to protect the film from FIB damage. 6 We used Raman spectroscopy to examine the phonon modes of the sulfurized film at 300 K, 140 K and 10 K. The Raman spectra are provided in Figure 1d. The peaks sharpened with decrease in temperature due to the expected decrease in anharmonic thermal phonon decay. The observed Raman peaks at 10 K agree well with data for bulk BaZrS3: 𝐴𝑔 1 at ~58 cm-1, 𝐴𝑔 2 and 𝐵3𝑔 1 at ~78 cm-1, 𝐵1𝑔 1 at ~86 cm-1, 𝐴𝑔 3 at ~97 cm-1, 𝐴𝑔 4 at ~143 cm-1, 𝐴𝑔 6 at ~216 cm-1, and 6 at ~225 cm-1.[21] Through scanning electron microscopy (SEM) imaging (Figure 1e), we 𝐵2𝑔 found that the BaZrS3 thin film was continuous and had a rough surface. A focused ion beam (FIB) was used to create a cross-section and reveal the film's thickness. The cross-sectional SEM image is shown in Figure 1f. The mean film thickness was measured to be ~230 nm. Scanning transmission electron microscopy (STEM) provided further evidence that the synthesized film was BaZrS3. A high-resolution HAADF-STEM image overlaid with a crystal model of BaZrS3 is shown in Figure S2 (Supporting Information). Having confirmed that the deposited material is polycrystalline BaZrS3, we proceeded to investigate the optical characteristics of the BaZrS3 thin film. Its absorption coefficient values and room-temperature photoluminescence (PL) spectrum are provided in Figure 2a. A 532 nm laser excitation was used for the PL measurements. The BaZrS3 film exhibited the steepest increase in absorption at a wavelength of ~710 nm, which was also the wavelength of maximum PL intensity. The 710 nm wavelength corresponds to an optical bandgap of ~1.75 eV, which is in good agreement with previously calculated values.[13] Organic-inorganic halide perovskites (OIHP) lose their optoelectronic potency upon prolonged exposure to moist ambient conditions.[22] Periodically monitoring the PL spectrum has previously been employed to gauge the environmental stability of perovskite materials.[23- 24] We followed the same approach to compare the environmental stability of BaZrS3 to the prototypical OIHP -- methylammonium lead iodide (CH3NH3PbI3 or MAPbI3). MAPbI3 samples were synthesized by spin-coating a ~25 wt% solution of lead (II) iodide and 7 methylammonium iodide in N,N-Dimethylformamide on a 1 cm × 1 cm glass substrate followed by annealing at ~100°C for ~20 minutes. A BaZrS3 thin film and a MAPbI3 thin film were stored together under ambient conditions (~20°C, 40-71% RH) and their PL spectra were monitored. The PL excitation power was kept constant for all measurements. As shown in Figure 2b, the PL intensity of BaZrS3 decreased gradually with time but was still substantial after 5 weeks. On the other hand, Figure 2c shows that the PL of MAPbI3 vanished after just 2 weeks. Figure 2d shows the PL intensity ratios for the BaZrS3 and MAPbI3 samples over time under ambient conditions. BaZrS3 retained ~50% of its initial PL intensity after 5 weeks (the majority of the decay is in the first 1-2 weeks after which the BaZrS3 response tends to level out). By contrast, the PL intensity ratio of MAPbI3 drops precipitously to 0 in 2 weeks. Even more aggressive environmental conditions such as exposure to steam proved to be far less detrimental to BaZrS3 than to MAPbI3. The inset in Figure 2d shows the PL intensity ratios for the two film samples exposed to steam. PL emission from MAPbI3 was extinguished in just 1 minute, but BaZrS3 luminesced with ~82% of its initial PL intensity after 10 minutes of steam exposure. A schematic illustration of the steam exposure experiment and the relevant PL spectra are provided in Figure S3 (Supporting Information). The PL results demonstrate that the optical response of BaZrS3 is far more stable than that of MAPbI3 in the presence of moisture. We also established the chemical stability of BaZrS3 by conducting an XRD measurement on the film after extended exposure to atmospheric moisture. Figure S4a (Supporting Information) shows that the XRD pattern of the film did not change significantly after 10 weeks in ambient conditions. No new phases were formed and the original BaZrS3 phase persisted. Furthermore, the color of the BaZrS3 film did not change (Figure S4c, Supporting Information). A MAPbI3 film under the same conditions underwent rapid degradation. The original MAPbI3 XRD peaks almost vanished after 10 days and prominent peaks of PbI2 appeared (Figure S4b, Supporting Information). The formation of PbI2 also 8 explains the color change of the original MAPbI3 film from black to yellow over the 10 day period. Figure 2. Optical characteristics and environmental stability. a) Absorption coefficient and photoluminescence (PL) spectrum of BaZrS3 thin film at room temperature. b) PL spectra of BaZrS3 thin film kept under ambient conditions for 5 weeks. c) PL spectra of MAPbI3 thin film kept under ambient conditions for 2 weeks. d) PL intensity ratios of BaZrS3 and MAPbI3 thin films under ambient conditions. The inset shows PL intensity ratios for steam exposure. We carried out a set of ab initio molecular dynamics (AIMD) simulations on BaZrS3 to compare its rate of water-induced degradation with that of MAPbI3. Complementary to the work of Mosconi et al. on MAPbI3, the AIMD simulations were based on DFT.[25] Two pristine surfaces of BaZrS3 were relaxed, one with BaS termination and the other with ZrS2 termination. Both surfaces were exposed to a cluster of H2O molecules and the systems were allowed to 9 evolve through AIMD. Throughout the simulations, we tracked the distance between the oxygen atom in H2O and the surface atoms of BaZrS3. We also tracked the interatomic distances within BaZrS3. As shown in Figure 3a, no significant change in these distances was observed for either surface through almost 10 ps of simulation. This behavior is in stark contrast to that of MAPbI3. Data taken from the results of Mosconi et al. (Figure 3b) shows that the distance between H2O and Pb decreased as the water rapidly approached the perovskite.[25] H2O ultimately caused the release of an iodine (I) anion and a neighboring methylammonium (MA) cation. The increased I -- Pb and N -- Pb distances are reflective of MAI solvation. The unchanging distances in BaZrS3 suggest that its interaction with water is weak. Although the timescale is not fully representative of experimental conditions, our simulations suggest that the rate of water-induced deterioration is much lower for BaZrS3 when compared to MAPbI3. We also used DFT to examine light-induced degradation. In the case of MAPbI3, the work of Kim et al. suggests that photodecomposition involves creation of iodine vacancies in the bulk material.[9] They hypothesize that photoexcitation causes iodine (I) ions in the lattice to absorb holes, allowing them to unbind from the neighboring Pb to form neutral interstitial I atoms. These unbound I atoms have a smaller radius than those bound to Pb, making them highly mobile and likely to diffuse out of the crystal at an accelerated rate. However, our DFT calculations indicate that the interstitial I atoms would invariably bind to nearby Pb atoms when the system was allowed to relax. Considering this, we propose instead that I propagates via migrations between nearest neighbor (NN) I sites. This type of propagation hinges on two processes. First, an I vacancy is created at the MAPbI3 surface due to photoexcitation. This vacancy can then move into the bulk if a neighboring I ion migrates into the vacancy. Through successive migrations, each vacancy takes a random walk, hopping about adjacent I sites and ultimately moving away from the surface and into the bulk material. Over time, such vacancies will "accumulate" in the bulk and alter the material's electronic properties and contribute to the breakdown of MAPbI3. This picture is consistent with Kim et al.'s observation of increased I2 10 outflow under illumination, as I ions that migrate to the surface can detach and join to form I2 molecules. We used the Arrhenius equation to investigate the rates of the aforementioned two processes -- i.e., bulk vacancy migration and surface vacancy formation. The Arrhenius relationship can be expressed as: 𝑅 ∝ 𝑒−𝐸 𝑘𝐵𝑇 ⁄ (1) where 𝑅 is the rate of the given process, 𝐸 is the energy required to induce the given process, 𝑘𝐵 is the Boltzmann constant, and 𝑇 is the absolute temperature. For vacancy migration, the energy barrier 𝐸 was calculated using the climbing image nudged elastic band method (CINEB) by subtracting the energy of the initial equilibrium system from the maximum along the energy profile.[26] Four distinct sulfur vacancy (VS) NN migrations and eight distinct iodine vacancy (VI) NN migrations were examined in BaZrS3 and MAPbI3, respectively. The migration paths are shown in Figure 3c. For both materials, the migration barrier energies to second NN sites were ~1 eV higher than those of first NN sites, suggesting that second NN migrations occur at negligible rates at room temperature. The barrier energies for all first NN migrations are plotted in Figure 3d. All the barriers for VS migrations are much higher than those for VI. Quantitatively, the lowest barrier energy for VI migration was found to be 0.16 eV, which is dwarfed by the lowest VS migration barrier of 0.59 eV. The Arrhenius equation predicts that at room temperature, a difference in barrier energies of 0.43 eV corresponds to a difference in migration frequency on the order of 107. This is assuming that the vibrational frequencies for modes involving I in MAPbI3 are of the same order of magnitude as those involving S in BaZrS3.[21, 27] Therefore, we expect that the VI migration rates in MAPbI3 are about seven orders of magnitude higher than those of VS in BaZrS3. For this reason, surface vacancies in BaZrS3 are not expected to cause instability because the high energy barriers would drastically slow down vacancy migration into the bulk. 11 Figure 3. Simulations to elucidate BaZrS3's superior stability. a) Interatomic distances throughout the AIMD simulation of BaZrS3 in the presence of water molecules. The lower panel is for BaS surface termination and the upper panel is for ZrS2 surface termination. b) Interatomic distances of MAPbI3 in the presence of water molecules. Reproduced with permission.[25] c) Anion vacancy migration paths in BaZrS3 and MAPbI3. For BaZrS3, the orange spheres are S atoms, the magenta spheres are Ba atoms, and the blue spheres are Zr atoms. For MAPbI3, the blue spheres are I atoms and the green spheres are Pb atoms. d) Barrier energies for sulfur vacancy (orange bars) and iodine vacancy (blue bars) migrations. We also studied surface vacancy formation in the ground and photoexcited states of MAPbI3 and BaZrS3. Simulation of light-induced processes requires a description of photoexcited systems. For this, the ∆ self-consistent field method was used to constrain the occupations of the Kohn-Sham orbitals.[28] To simulate an excited state, the conduction band minimum (CBM) was populated with a single electron, leaving a hole in the valence band maximum (VBM). The energies of the systems of interest were then calculated under these constraints. The formation energy of an iodine vacancy in MAPbI3 is given by: 12 𝐸𝑓 = 𝐸𝑣𝑎𝑐 + 1 2 𝐸𝐼2 − 𝐸𝑝𝑟𝑖𝑠 (2) where 𝐸𝑣𝑎𝑐 is the energy of MAPbI3 with a surface vacancy, 𝐸𝐼2 is that of an I2 molecule, and 𝐸𝑝𝑟𝑖𝑠 is that of a pristine MAPbI3 surface. As continuous illumination increases the partial pressure of I2 gas at the MAPbI3 surface, equation 2 assumes that I atoms that leave MAPbI3 enter an iodine-rich environment. As indicated in Table S1 (Supporting Information), the surface vacancy formation energies are much smaller in the excited system than in the ground state system. The smaller energies would enable rapid VI creation when MAPbI3 is subjected to photoexcitation. Rapid VI migration coupled with accelerated surface VI creation explains the breakdown of MAPbI3 under photoexcitation. We found that photoexcitation also lowers surface sulfur vacancy formation energies for BaZrS3 (Table S1, Supporting Information). However, BaZrS3 is relatively immune to photodecomposition due to its much lower VS migration rates. To test the viability of BaZrS3 for optoelectronics, we fabricated and characterized photodetectors of the lateral photoconductor type. Square-shaped contact pads of gold were deposited on top of BaZrS3 thin films to make the devices. The pads were ~60 nm thick and ~425 µm long with a spacing of ~83 µm. Similar devices were fabricated with MAPbI3 thin films for comparison. Devices of both materials were stored together under ambient conditions (~20°C, 40-71% RH) and current-voltage (I-V) characteristics of these devices were measured periodically. Measurements were made in the dark and under illumination with a 405 nm laser. The illumination power density was ~55 mW cm-2 for all measurements. A schematic illustration of a device and its measurement is provided in Figure 4a. The I-V characteristics of a BaZrS3 photodetector are shown in Figure S5 (Supporting Information). The linear I-V relationship shows that the contact between BaZrS3 and gold was ohmic. The dark current of BaZrS3 photodetectors was substantial, which may be because of defects. The photocurrent was calculated by subtracting dark current from illuminated current. Responsivity (A W-1) was 13 calculated by dividing the photocurrent density (A cm-2) by the illumination power density (W cm-2). Figure 4. Photodetector characterization and performance. a) Schematic illustration of BaZrS3 photodetector. b) Responsivity of BaZrS3 photodetectors kept under ambient conditions for 4 weeks. c) Responsivity of MAPbI3 photodetectors kept under ambient conditions for 10 days. d) Normalized responsivity of BaZrS3 and MAPbI3 photodetectors kept under ambient conditions. All responsivity measurements were performed with 405 nm laser illumination at a power density of ~55 mW cm-2. Responsivity values of the BaZrS3 photodetectors are shown in Figure 4b. Fresh BaZrS3 devices exhibited a mean responsivity of ~46.5 mA W-1 at 5 V. This value is comparable to the reported responsivities for lateral polycrystalline OIHP photodetectors illuminated with similar wavelengths. Wang et al. reported ~17.5 mA W-1 with 400 nm at 10 V and Hu et al. reported ~110 mA W-1 with 470 nm at 3 V.[29,30] Responsivity values of the BaZrS3 devices after 2, 3, 14 and 4 weeks in the ambient are also shown in Figure 4b. For comparison, responsivity values of the MAPbI3 devices are shown in Figure 4c. A mean responsivity of ~6.4 mA W-1 was observed for fresh MAPbI3 devices at 5 V, but the responsivity slumped by two orders of magnitude in just 10 days. MAPbI3 also changed color from black to yellow in that time, indicating decomposition to PbI2. Photographs of a MAPbI3 device before and after degradation are shown in Figure S6 (Supporting Information). BaZrS3, as observed previously, did not change color in 4 weeks. Normalized responsivity values of the BaZrS3 and MAPbI3 devices are shown in Figure 4d. In just 4 days, the mean responsivity of the MAPbI3 devices at 5 V decreased to ~5% of the initial value. In 10 days, the photo-responsivity of MAPbI3 is nearly completely extinguished. On the other hand, the BaZrS3 devices exhibited a much more stable photo-response by retaining ~60% of the initial responsivity at 5 V after 4 weeks in the ambient. The majority of the aging occurs in the first 1-2 weeks after which the BaZrS3 film's photo- responsivity tends to level off. Responsivities at other voltages followed a similar trend. In addition to optoelectronics, we also show the potential of this material for energy conversion in thermoelectric devices by using first principles calculations (see Materials and Methods). The extremely low thermal conductivity of BaZrS3 contributes to an enhanced thermoelectric figure of merit (ZT) over a wide range of temperatures (Figure S7, Supporting Information). At higher temperatures (500 - 700 K), ZT remains constant (maximum  1) over a wide range of carrier concentrations. Here, ZT is dominated by the Seebeck coefficient until the peak carrier concentration of 1018 cm-3 is attained. Further increasing the carrier concentration causes a higher entropic contribution to the thermoelectric energy conversion process that leads to a decrease in ZT. At lower temperatures (< 500 K), ZT decreases with carrier concentration because combined effect of the Seebeck coefficient and electrical conductivity leads to higher carrier scattering. To summarize, we report a chalcogenide perovskite thin film and photodetector. This perovskite -- BaZrS3 -- was synthesized by sulfurizing a BaZrO3 thin film. The BaZrS3 thin film 15 was found to be polycrystalline with a bandgap of ~1.75 eV. The BaZrS3 film substantially outperformed MAPbI3 in terms of stability under moisture-rich conditions. Our simulations indicated that BaZrS3 interacts very weakly with water when compared to that of MAPbI3. Our calculations also showed the rate of anion vacancy migration in BaZrS3 to be seven orders of magnitude slower than that in MAPbI3, making BaZrS3 far less prone to photodecomposition. The advantage of environmental stability was seen clearly in photodetector performance. BaZrS3 photodetectors lost ~40% of their initial responsivity after 4 weeks in the ambient, whereas similar MAPbI3 photodetectors degraded by ~95% in only 4 days. Our results provide experimental evidence and theoretical explanations for the environmental stability of BaZrS3. Lack of toxic lead (Pb) and intrinsic stability under photoexcitation and when exposed to the environment makes this chalcogenide perovskite a viable candidate for optoelectronics. The material also shows promise as a high figure of merit material for thermoelectric energy conversion. Future efforts with BaZrS3 should focus on lowering the synthesis temperature and reducing the dark current in devices. Materials and Methods Synthesis of BaZrO3 thin film: 1.92 g of barium acetate (99%, Alfa Aesar), 3.66 g of zirconium(IV) acetylacetonate (97%, Sigma-Aldrich) and 0.90 g of polyvinyl butyral (Sigma- Aldrich) were stirred and dissolved in 25 mL of propionic acid (99.5%, Sigma-Aldrich) at 60°C. The resulting clear and transparent solution was spin-coated on a clean quartz substrate (1 cm × 1 cm × 2 mm) at 2000 rpm for 1 minute followed by 5000 rpm for 5 minutes. The spin-coated film was annealed in air in a Thermolyne FB1315M muffle furnace at 700°C for 15 minutes followed by 40 minutes at 870°C. Synthesis of BaZrS3 thin film: The BaZrO3 thin film on quartz was placed in a quartz boat in the middle zone of an MTI OTF-1200X three-zone tube furnace (quartz tube with 3″ diameter). The tube was evacuated down to a base pressure of ~30 mTorr and then purged with UHP 16 nitrogen (N2) while maintaining a pressure of ~150 mTorr. All three zones were then ramped up to 1050°C in 1 hour. When the temperature reached 600°C, carbon disulfide (CS2) was introduced into the tube through a bubbler filled with liquid CS2 (99.9%, Sigma-Aldrich). UHP N2 was used as the carrier gas and the bubbler was kept at ~20°C. A mass flow controller at the outlet of the bubbler was used to keep the flow rate of the CS2-N2 mixture at ~25 sccm while a pressure of ~2 Torr was maintained inside the tube. The furnace was held at 1050°C for 4 hours. Then the heating was stopped, and the furnace was allowed to cool down naturally without opening the lid. When the furnace had cooled down to 600°C, the CS2 supply was stopped and the tube was purged with UHP N2 till the furnace cooled down completely. The tube was then brought up to atmospheric pressure and the sulfurized film was extracted. Synthesis of MAPbI3 thin film: 461 mg of lead (II) iodide (99.999%, Sigma-Aldrich) and 159 mg of methylammonium iodide (99%, Sigma-Aldrich) were dissolved in 2 mL of N,N- Dimethylformamide (99.9%, EMD Millipore) to obtain a clear solution. This solution was spin- coated on a clean glass substrate (1 cm × 1 cm × 1 mm) at 2000 rpm for 30 seconds. Finally, the spin-coated film was annealed on a hot plate at 100°C for 20 minutes. All the steps in this synthesis were carried out in an argon-filled glovebox. Materials characterization: X-ray diffraction (XRD) measurements were conducted on a PANalytical X'Pert Pro diffractometer using CuKα (λ =1.5405 Å) radiation. The X-ray generator was set to 45 kV and 40 mA. Raman spectra were acquired with a Horiba Jobin-Yvon LabRAM HR evolution Raman spectrometer in back scattering geometry with 633 nm laser excitation and a Peltier-cooled CCD detector. A Carl Zeiss 1540EsB Crossbeam system was used for scanning electron microscopy (5 kV) and focused ion beam work (Ga ion, 30 kV). Photoluminescence spectra were acquired by using 532 nm laser excitation and an Andor spectrograph with a Peltier-cooled CCD detector. The laser power was measured by using a power meter. Transmission electron microscopy was carried out on a FEI Titan cubed STEM 17 equipped with a monochromator and probe corrector. The HAADF detector was used and imaging was performed in STEM mode at 300 kV with a 0.5 nA beam current. Device fabrication and characterization: 60 nm thick gold contacts were deposited on the BaZrS3 and MAPbI3 thin film samples by e-beam evaporation at a deposition rate of ~1 Å/s. A copper shadow mask was used to create the pattern. The current-voltage characteristics were measured by using a Keithley 4200-SCS semiconductor characterization system in a two-probe configuration. A 405 nm laser was used for photoexcitation. The laser power was measured by using a power meter. Computational methods: DFT calculations were carried out using the projector augmented wave (PAW) method of density functional theory (DFT) implemented in the Vienna ab initio simulation package (VASP).[31-35] The Perdew-Burke-Ernserhof (PBE) generalized gradient approximation (GGA) for the exchange-correlation functional was employed,[36] with a basis set including plane waves with energies up to 400 eV. The Brillouin zones of pristine MAPbI3 and BaZrS3 were respectively sampled with 4×4×3 and 3×3×2 Γ-centered Monkhorst-Pack grids.[37] Relaxation iterations continued until the Hellmann-Feynman forces on all atoms settled below 10 meV/Å, while electron field iterations persisted until changes in both the total energy and Kohn-Sham eigenvalues fell below 10-5 eV. For relaxations of surface structures, 12 Å of vacuum was inserted in the z-direction (out-of-plane direction) to ensure that interactions with the periodic images were negligible. AIMD and CINEB simulations obeyed the same convergence criteria. AIMD simulations were run in an NVT ensemble at a temperature of 300 K with a 1 fs time step. To simulate the perovskite surfaces, 2×2 slabs were cut from the BaZrS3 crystal, which exposed the BaS- and ZrS2-terminated (001) surfaces after relaxation. The vacuum regions above and below the perovskite slabs were populated with water molecules, whose density was kept consistent with the experimental density of liquid water. The CINEB calculations included eight image structures along each ionic path. Care was taken to remove metastable states from any ionic path before attempting to relax it. That is, any 18 path that contained a metastable state was split into two paths, each bounded on one end by that metastable state. Thermoelectric properties were calculated using the linearized Boltzmann transport equations in the relaxation time approximation using a Fourier expansion of the electronic energies as obtained from VASP for the optimized structures. The thermoelectric figure of merit 𝑍𝑇 = 𝑆2𝜎𝑇 𝜅𝑒+ 𝜅𝐿 , where S is Seebeck coefficient, 𝜎 the electrical conductivity, T the temperature, while 𝜅𝑒 and 𝜅𝐿 are the electronic and lattice thermal conductivities, respectively. A denser k-mesh of 120,000 points was employed to ensure higher accuracy of the calculated transport properties. Acknowledgements T.G. is grateful to Kent Way and Bryant Colwill for building and maintaining the sulfurization setup, to David Frey for helping with the FIB, and to Vidhya Chakrapani for helping with absorption spectroscopy. N.K. and V.M. acknowledge funding support from the USA National Science Foundation (Award 1608171). S.-F.S. acknowledges support from AFSOR through Grant FA9550-18-1-0312. G.B. thanks support from the P.C. Rossin Assistant Professorship at Lehigh. References 1. N.-G. Park, Perovskite solar cells: An emerging photovoltaic technology. Mater. Today 18, 65 -- 72 (2015). 2. M. Ahmadi, T. Wu, B. Hu, A Review on Organic -- Inorganic Halide Perovskite Photodetectors: Device Engineering and Fundamental Physics. Adv. Mater. 29, 1605242 (2017). 3. Y.-H. Kim, H. Cho, T.-W. Lee, Metal halide perovskite light emitters. Proc. Natl. Acad. Sci. U. S. 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Ernzerhof, Generalized gradient approximation made simple. Phys. Rev. Lett. 77, 3865 -- 3868 (1996). 37. H. J. Monkhorst, J. D. Pack, Special points for Brillouin-zone integrations. Phys. Rev. B 13, 5188 -- 5192 (1976). 21 Supporting Information Figure S1. XRD pattern of BaZrO3 oxide film on quartz substrate. The dashed vertical lines represent lines from the XRD reference for BaZrO3 (ICDD 00-006-0399). Figure S2. HAADF-STEM image of BaZrS3 thin film (left). The overlay is from the atomic model on the right and shows the position of Ba atoms. The inset shows the fast Fourier transform of the STEM image. On the right, the simulated BaZrS3 structure is shown, where magenta spheres are Ba atoms, orange spheres are S atoms, and blue spheres are Zr atoms. 22 Figure S3. (a) Schematic illustration of steam exposure. (b) PL spectra of BaZrS3 thin film exposed to steam. (c) PL spectra of MAPbI3 thin film exposed to steam. 23 Figure S4. (a) XRD pattern of BaZrS3 thin film after 10 weeks under ambient conditions. (b) XRD patterns of fresh (lower panel) and degraded (upper panel) MAPbI3 thin film. (c) Photographs of a BaZrS3 thin film on quartz substrate. Figure S5. (a) Current-voltage characteristics of a fresh BaZrS3 photodetector. (b) Current- voltage characteristics of the same BaZrS3 photodetector after 4 weeks in ambient conditions. 24 Figure S6. (a) Photograph of a fresh MAPbI3 photodetector. The deposited gold contact pads can be seen on top of the MAPbI3. (b) Photograph of the same MAPbI3 photodetector after 10 days in the ambient. Figure S7. Calculated thermoelectric figure of merit (ZT) against carrier concentration n for (a) p-type doping and (b) n-type doping across a temperature range for BaZrS3. Table S1. Surface iodine and sulfur vacancy formation energies for MAPbI3 (for PbI2 and MAI surface terminations) and BaZrS3 (for ZrS2 and BaS surface terminations). Ground (eV) Excited (eV) PbI2 1.5425 0.5624 MAI 2.2343 0.3872 ZrS2 0.2732 0.1005 BaS 0.4783 -0.5586 25
1807.08751	1	1807	2018-07-23T22:14:29	The Quantum Field Of A Magnet Shown By A Nanomagnetic Ferrolens	[ "physics.app-ph", "physics.ins-det", "quant-ph" ]	It has been more than two hundred years since the first iron filings experiment, showing us the 2D macroscopic magnetic imprint of the field of a permanent magnet. However, latest developments in modern nanomagnetic passive direct observation devices reveal in real-time and color a more intriguing 3D dynamic and detailed image of the field of a magnet, with surprising new findings, that can change our perspective for dipole magnetism forever and lead to new research. This research is a continuation of our previous work (DOI: 10.1016/j.jmmm.2017.12.023). The magnetostatic fields were under our scope and examined with the aid of the ferrolens. We are presenting experimental and photographical evidence, demonstrating the true complex 3D Euclidian geometry of the quantum field of permanent magnets that have never been seen before and the classic iron filings experiment, apart of its 2D limitations, fails to depict. An analysis of why and what these iron filings inherent limitations are, giving us an incomplete and also in some degree misguiding image of the magnetic field of a magnet is carried out, whereas, as we prove the ferrolens is free of these limitations and its far more advanced visualization capabilities is allowing it to show the quantum image with depth of field information, of the dipole field of a permanent magnet. For the first time the domain wall (i.e. Bloch or Neel wall) region of the field of a magnet is clearly made visible by the ferrolens along with what phenomenon is actually taking place there, leading to the inescapable conclusion, novel observation and experimental evidence that the field of any dipole magnet actually consists of two distinct and separate toroidal shaped 3D magnetic bubbles, each located at either side of the dipole around the exact spatial regions where the two poles of the magnet reside.	physics.app-ph	physics	MAGNETISM AND MAGNETIC MATERIALS JOURNAL 00 (2018) 000 -- 000 _____________________________________________________________________________________________________________________________________________ The Quantum Field Of A Magnet Shown By A Nanomagnetic Ferrolens Emmanouil Markoulakisa, Antonios Konstantarasa, Emmanuel Antonidakisa aTechnological Educational Institute of Crete, ComputerTechnology, Informatics & Electronic Devices Laboratory, Romanou 3, Chania, 73133, Greece A R T I C L E I N F O A B S T R A C T Article history: Received 12 April 2018 initial submission MAGMA_2018_1032. Invited Resubmission from 31 May 2018 MAGMA_2018_1032. Revised submission Accepted 06 July 2018 Keywords: Magnetostatic fields Visualization Quantum effects 3D Magnetic field geometry Ferrofluid thin film Superparamagnetism Highlights:  Direct Observation Nanomagnetic Visualization Method for Magnetostatic Fields  Quantum Field 3D Euclidian Geometry of Dipole Magnet Revealed (breakthrough discovery)  Experimental Results and Theoretical Analysis Graphical Abstract It has been more than two hundred years since the first iron filings experiment, showing us the 2D macroscopic magnetic imprint of the field of a permanent magnet. However, latest developments in modern nanomagnetic passive direct observation devices reveal in real-time and color a more intriguing 3D dynamic and detailed image of the field of a magnet, with surprising new findings, that can change our perspective for dipole magnetism forever and lead to new research. This research is a continuation of our previous work, "Markoulakis, E., Rigakis, I., Chatzakis, J., Konstantaras, A., Antonidakis, E. Real time visualization of dynamic magnetic fields with a nanomagnetic ferrolens(2018) Journal of Magnetism and Magnetic Materials, 451, pp. 741-748.DOI: 10.1016/j.jmmm.2017.12.023" that is using a ferrolens apparatus for showing the dynamic magnetic field on a transmitting radio antenna, while this time the magnetostatic fields were under our scope and examined with the aid of the ferrolens. We are presenting experimental and photographical evidence, demonstrating the true complex 3D Euclidian geometry of the quantum field of permanent magnets that have never been seen before and the classic iron filings experiment, apart of its 2D limitations, fails to depict. An analysis of why and what these iron filings inherent limitations are, giving us an incomplete and also in some degree misguiding image of the magnetic field of a magnet is carried out, whereas, as we prove the ferrolens is free of these limitations and its far more advanced visualization capabilities is allowing it to show the quantum image with depth of field information, of the dipole field of a permanent magnet. For the first time the domain wall (i.e. Bloch or Neel wall) region of the field of a magnet is clearly made visible by the ferrolens along with what phenomenon is actually taking place there, leading to the inescapable conclusion, novel observation and experimental evidence that the field of any dipole magnet actually consists of two distinct and separate toroidal shaped 3D magnetic bubbles, each located at either side of the dipole around the exact spatial regions where the two poles of the magnet reside. Corresponding author. Tel.:+30-28210-23035 E-mail address: [email protected] Peer review under responsibility of xxxxx. doi: Hyperlinks: 1.Video1 demonstration link: https://tinyurl.com/yctntnjc 2. Video2 demonstration link: https://tinyurl.com/y78mgd7a 3. Fluxscope photo: https://tinyurl.com/ycdyfher 4. Raw photo of fig.8: https://tinyurl.com/ycnrqgrw 5. Graph data of fig.11: https://tinyurl.com/y9dvxr9a 6. Three-axis magnetometer data: https://tinyurl.com/yapq8o8u 2 MAGNETISM AND MAGNETIC MATERIALS JOURNAL 00 (2018) 000 -- 000 1. Introduction We are using the same ferrolens device, introduced and described by us in our previous research [1] to show the actual 3D geometry of the dipole field of permanent magnets and as such for any other dipole static magnetic field, since the geometry of a magnet's dipole magnetic field does not depend or change with the shape of the magnet. Their field is uniform and remains geometrically the same for all dipole magnets. Very little research has been carried out so far about the topic of 3D field geometry of permanent magnets and they all rely and are based on the old, 2D iron filings macroscopic experiment [2] imprint of the field shown in fig.1 . Fig. 2. Bloch wall region of ferrite ring magnet (side view) as shown by a magnetic field viewer, at the middle of magnet as a light green (no magnetism) strip, dark areas (magnetism) left and right are the two poles of the axial magnetized magnet. On the other hand the ferrolens is a modern nanomagnetic photonic device that operates more at the quantum than the macroscopic level, has depth of field information and can therefore depict the quantum 3D image of the field of a magnet in real-time. As we will see in the next pages the actual quantum field [3] differentiates from the classic macroscopic iron filings image. We will analyze the experimental data, discuss and come to some surprisingly novel conclusions. Fig. 1. Classic iron filings experiment with N-S poles and Bloch domain wall indicated. 2. Materials and methods However this picture, of the iron filings, besides, their apparent 2D limitation for depicting the field, is due to their strong ferromagnetism, size, and their magnetic interference, lacking in the fine tuning, sensitivity and resolution required to depict the very important details of a static magnetic dipole field. Moreover, they are not suitable for use in the actual 3D visualization of the field. For example the very low near zero, magnetic reluctance [3] of iron filings will cause them to actually behave more like a compass needle. They always orient themselves relative to their position towards the highest potential regions of the dipole static field namely the two poles of the magnet. Therefore the totally miss to show what is actually happening to the magnetic flux tangent to the field force vectors, near the Bloch (or preferably Neel) domain wall [3] region at the middle of a permanent magnet fig.2, a region of diminishing magnetic field strength (important clarification, from here on when we referring to the Bloch region we are referring to the field area of a magnet which is near and around to its Bloch domain wall fig.1, which is a number of atoms thick about 100nm). fields in real-time As shown and described in our previous work [1], the ferrolens (i.e. commercially available under the registered trademark Ferrocell) was used as a direct observation nanomgnetic photonic device for the visualization of 3D magnetostatic (Video1 demonstration Link)1 . Two optical grade glass disks are put together and sealed with optical cement around their periphery in a vacuum environment and with an encapsulated thin film placed in between the two disks. That is a 50 microns thick film of ferrofluid Fe3O4 yielding to a 10nm average size magnetite nanoparticles solution in a hydrocarbon based carrier fluid (i.e. mineral oil). In addition the nanoparticles are coated with a surfactant (i.e. oleic acid). Normally, ferrofuid in its free bulk state is opaque and blocks light. However, ferrofluid in a thin film configuration as described above, becomes transparent. Different types of neodymium magnets, such as cube, bar, cylindrical and ring magnets were placed under or above the ferrolens for observation. No need this time for the ferrolens to be fitted in a microscopy apparatus to view the magnetic fields. Different lighting conditions were applied from various artificial light sources but primary from an infrared remote controlled RGB LED light strip around the periphery of the ferrolens as shown in fig.3. 1 Video1 demonstration link : https://tinyurl.com/yctntnjc 3 MAGNETISM AND MAGNETIC MATERIALS JOURNAL 00 (2018) 000 -- 000 Fig. 3. (a) The ferrocell (left) and the ferrocell fitted in a 3D printed frame (right) with the LED light strip inside on the periphery. Cube magnet placed on top. (b) Cube neodymium magnet placed and in contact under the activated ferrocell. Notice under magnetic viewing the body of the magnet becomes transparent (i.e. invisibility cloak) and only its magnetic flux is shown. (c) Cube magnet placed this time on top of activated ferrocell, pole of magnet facing down, with different lighting configurations from the IR programmable RGB LED lighting strip. Green light (left) and white light (right). Depth of field information is shown. A special geometry magnetic ring array prototype was also constructed for the purpose of our experiments. The plastic frame for fitting in the twelve, 1 mm thick, 10 mm square magnets used in this magnetic array design, was made using a 3D printer. This specific magnetic ring array, emulates the vortex-toroid geometry of the static magnetic field of a magnet shown by the ferrolens. A 3-axis xyz magnetometer was also used in the experiments for the measurement of the magnetic field strength in 3D space as shown in fig.4. Details about the design of the array as well as the 3-axis magnetometer will be described in our next publication. Fig. 4. (a) Magnetic ring array designed to emulate 3D geometry of magnetostatic fields observed by the ferrolens. (b) Pole of the magnetic ring array as shown by a magnetic viewer. (c) 3D field measuremets with a 3-axis xyz Mag-03MCESL70 magnetometer. (d)_Magnetic ring array frame, 3D printer blueprint. We see the 12 slots where the individual magnets of the ring are placed in. This particular ring geometry placement of the magnets with skew angles emulates the field geometry of a magnet as observed with the ferrolens. Various 2D&3D graphing, plotting and analysis software was used for some of the results of the research we present as well as other graphics packages, (x,y,z) position digitizer and 3D graphics illustration software. 3. Results A cube neodymium magnet in fig.5 is placed very close under the ferrolens. The cube magnet is placed on its side with its two magnetic poles facing left and right as shown by the ferrolens as two dark circles. The ferrolens is lit by a programmable remote controlled RGB LED lighting strip on the periphery of the lens, programmed to emit white light (i.e. the natural color of the ferrofluid thin film is orange-brown). The result is all surfaces of the ferrolens to be lighted uniformly by the omnidirectional artificial light source. The superparamagnetic single domain [4,5] nanoparticles inside the ferrolens align with the external magnetic field of the magnet induced in the ferrolens following its magnetic flux and at the same time reflect part of the light therefore allowing them to 'paint' the magnetic flux lines of the field and make them visible [1] (Video2 demonstration Link)2. 2 Video2 demonstration link: https://tinyurl.com/y78mgd7a 4 MAGNETISM AND MAGNETIC MATERIALS JOURNAL 00 (2018) 000 -- 000 the mirror image of the pole lines projected to the other pole due the fact that the ferrolens is totally transparent to the magnetic field. Fig.6(a) is the same photo of fig.5 without the text showing the side view of the quantum field of cube magnet. In figures 6 (b), (c) and (d) a very bright LED white light strip is used with a very strong bar magnet. These figures are very important and reveal the true geometry of the field at the poles of a magnet and the flux trajectories. As we said before, a ferrolens is totally transparent to the magnetic field induced therefore for a strong magnet in close proximity to the ferrolens and when oriented with its N-S pole magnetization axis perpendicular to the ferrolens surface, then, the field flux on its two poles, will appear on the ferrolens simultaneously and fully interlaced (i.e. criss-crossing lines) as a 2D compressed image representation of the actual 3D Euclidean magnetic field in space. This is exactly the case in photograph fig.6(d) where the bar magnet is placed on top of the ferrolens. Again, actual observation with the ferrolens will result to holographic images and not to flattened 2D information shown in these photographs. Fig. 5. Quantum field of a magnet shown by a ferrolens as two geometrical vortices, each at either pole of the magnet (black circles) , oriented back to back and touching at the middle of the magnet where the Bloch domain wall ground state of the magnet is located (blue line in the middle) . A strong cube magnet is placed under the ferrolens at a small distance (1-2 mm) therefore its body becomes effectively invisible and not shown by the ferrolens. Only its field image is projected. Superimposed text was used to indicate North and South Pole of the magnet and its Bloch domain wall. The photo is doing injustice in showing the real depth of field information actually displayed by the ferrolens. This information is difficult to fully capture in a 2-D photograph. In the above fig.5 photograph taken from the ferrolens of the magnet's field, we can clearly see a compressed view (i.e. at the X-axis) emerging, of two vortices located spatially back to back and joined at the Bloch domain wall (ground state) of the magnet's field. This is the quantum field of a magnet. What is happening here? Is this true? How can flux lines are going straight through the Bloch region (i.e. region around Bloch domain wall, middle of magnet) of a magnet and in parallel to the Bloch wall axis (i.e. blue line)? All these will be explained at the discussion section of this paper. Also notice in the above photograph taken of fig.5 of the field, trajectories of the flux lines imply a counter geometry observed in the two mentioned vortices. North Pole appears to have counter clockwise rotation geometry whereas the South pole a clockwise. We must stress here, that the first impression of interlacing (i.e. criss- crossing) flux lines appearing in photograph fig.5, of the magnetic field image on the ferrolens, are not actually crossing lines which would imply crossing of the force vectors tangent to the flux lines of the field. This would be of course an impossible and unacceptable condition, but actually are overlapping lines of the field in 3D space which are shown by this ferrolens photograph as a compressed 2D image representation of the actual Euclidean magnetic field in space. Nevertheless, although 2D compression effect is inherent and amplified by the photographic lens, at the same time the ferrolens can depict a decent amount of depth of field information. Thus, in the actual viewing with the ferrolens, the observer will see one set of lines above the other, overlapping, as a hologram. This information is of course is impossible to be recorded by normal photography of the field shown by the ferrolens. Additionally and important, almost half of the lines you see are actually Fig. 6. (a) Previous photo in fig.5 without the text. (b) Strong bar neodymium magnet hold at a distance with its pole facing down to the ferrolens. Toroid geometry of quantum field of pole revealed without interlacing with its other pole flux. (c) Same magnet hold at a distance under the ferrolens some interlacing, criss-crossing, occurs. (d) Bar magnet placed on top of ferrolens with its pole facing down. Toroid fields of both poles of magnet appear now fully interlaced on the ferrolens. Specially, as we see in fig.6(b) the pole of the bar magnet facing down to the ferrolens, is kept at a safe distance so that its field flux geometry can be clearly displayed by the ferrolens without the interlacing effect occurring this time (i.e. criss-crossing lines) with the flux of its opposite pole. Therefore, the actual quantum field geometry of a single pole of a magnet and its flux trajectories is best demonstrated in fig.6(b). Notice how it appears like a rolled-in slinky. 5 MAGNETISM AND MAGNETIC MATERIALS JOURNAL 00 (2018) 000 -- 000 In fig.7(a) a strong neodymium ring magnet is placed on top of the ferrolens with its pole facing down. Looking though its hole we see again the same quantum field appearing in the ferrolens proving the that field of all dipole magnets are the same and independent of their physical shape. Again because of the strong magnet used and due to its reduced height (i.e. 5 mm), the fields on both of its two poles appear together as a compressed 3D image with the flux lines of both of the poles interlaced and overlapping. Fig. 7. (a) Quantum field of the poles of a ring magnet as shown by the ferrolens through the hole of the ring. The ferrolens LED light strip is emitting orange colored light. The ring magnet is placed on top of ferrolens with its pole facing down. Once more we see the same familiar pattern of the toroid fields of the two poles shown as a compressed 3D image fully interlaced and overlapping. (b) B/W photo for increased contrast, of a single pole of the field of the ring magnet shown under the ferreolens as a solid 3D toroidal shaped object. A black ferromagnetic painted paper was inserted between the ferrolens and the ring magnet. We placed on top of the ring magnet in fig.7(b) a ferromagnetic paint black paper and then observed through a ferrolens from above (i.e. we kept the ferrolens a few cm away from the ring), so that the field of the pole of the ring magnet would emerge as a solid 3D shape this time. As we can see the field of the pole of the ring magnet is shown here by the ferrolens as a solid toroidal object. Nevertheless, what we consider the most important photographic evidence of the quantum field 3D geometry of any dipole magnet is what we see next. At fig.8 the total quantum field outline geometry of a dipole magnet is revealed here by the ferrolens. We can see clearly in the inner part of the photo, that the field consists of two separate and distinct magnetic flux bubbles or hemispheres, each at either pole of the magnet placed back to back and almost 'touching' at the middle of the magnet where the Bloch region of the field is located separating the two. The experiment was contacted as explained in the fig.8 legend. Fig. 8. The total quantum field outline geometry of a dipole magnet is revealed here by the ferrolens. We can see clearly in the inner part of the photo that the field consists of two separate and distinct magnetic flux bubbles hemispheres, each at either pole of the magnet placed back to back and almost tangent at the middle of the magnet where the Bloch region of the field is located separating the two. On top of the ferrolens a cylindrical magnet is placed as shown in the photo. A small incandescent lamp with a diameter smaller than the diameter of the magnet was placed directly under the ferrolens and almost in contact with it at the center. Light from the small lamp because its very close proximity to the cylindrical magnet, is mostly blocked by the magnet's mass and is strongly scattered sideways to the periphery of the lens revealing thereby the outline of the magnet's quantum dipole field. This photograph was taken with the aid of a custom- made mechanical servo apparatus fitted with a ferrolens, namely a fluxscope3 as we call it. Notice here that the light outer ring is the outer rim of the lens and has nothing to do with the magnetic field shown inside. Notice the resemblance of the field shown with the Greek letter, theta θ. This novel and groundbreaking observation concerning the geometry of magnetostatic dipole fields [6] and its importance, we will discuss later in this paper. The above photographic evidence also resembles the same image as when we look inside an apple cut-in half structure. We cannot dismiss the striking resemblance with the Greek letter theta, θ (a version of fig.8 without the overlaid text can be found is this link4 ). Of course the field depicted in the photo of fig.8 is just one shell of the actual quantum field of a dipole magnet. In reality there many overlaying repeating shells or layers, resembling an onion. This repeating pattern continues outwards all the way to the outer regions of influence a magnet 3 Fluxscope consists of two linear tracking mechanisms from CD players on a microscope stand with a motor control box. It can focus the ferrolens and light source distances between using switches and buttons. And control light brightness. It was designed for one light source (incandescent). Photo: https://tinyurl.com/ycdyfher 4 Raw photo of fig.8: https://tinyurl.com/ycnrqgrw 6 MAGNETISM AND MAGNETIC MATERIALS JOURNAL 00 (2018) 000 -- 000 exerts in 3D space. The magnetic flux density (i.e. magnetic dipole field strength) diminishes with distance using the inverse cube law. 4. Discussion As a result of fig.8 we can say that at the quantum level of operation of a magnet as shown by the nanomagnetic superparamagnetic (i.e. single domain particles) ferrolens in contrast with the macroscopic iron filings experiment, the magnetic flux of a dipole magnet does not consist of a single flux circuit, closed between North and South poles but has two distinct and separate flux circuits. Each circuit closing between each pole and the middle ground state of a magnet where the Bloch domain wall region of the magnet is located. Furthermore, due the opposite spatial orientation of the two poles of a dipole magnet, these two distinct magnetic flux circuits must exhibit counteractive behavior. Although this is evident almost in all so far photos, a better demonstration of this effect is shown in fig.9. We will discuss all these in depth at the next section of the paper. In this section our primary focus will be on the obtained data from the experiments, which we will be thoroughly analyze and examine, for their validity and reliability. Also further analysis and data of the operation parameters of the ferrolens is provided in order to draw our conclusions. Before the discussion turns into a debate whether the classical iron filings experiment or the ferrolens depicts the actual field of the magnet correctly or not, it is essential to say that both are correct in their display when their level of operation is considered. The iron filings technique operates more at the macroscopic level showing us a macroscopic 2D imprint of the magnetostatic field of a permanent magnet dictated by the very low magnetic reluctance of the ferromagnetic iron filings operating actually more like compass needles. Thus, aligning only to the highest potential flux lines [3] towards the two poles of the magnet and neglecting the lower potential magnetic flux of the field of a magnet. Specifically, at the middle region of a magnet (i.e. Bloch region), the region with diminishing magnetism. This effect is best demonstrated in fig.10 bellow, Fig. 9. Small cube magnet hold under a dimmed light ferrolens so that few as possible flux lines appear with its top pole facing the ferrolens from below . Flux lines from both poles top and bottom pole of magnet are projected into the ferrolens, with the top pole flux trajectories (red color) overlapping in 3D space the more fade bottom pole flux lines (blue color) in an interlaced pattern, evidently demonstrating the counter geometry of the flux trajectories on the two poles of a magnet. Top actual pole shown is the North Pole of the magnet and bottom pole the South Pole. CCW here indicates counter clockwise and CW clockwise. Fig. 9 (a) is the original photo taken without the overlaid text and graphics in fig. 9 (b). Suffice to say here that in the in fig.9 we don't try to analyze or describe any flow and direction of energy namely from North to South pole of a magnet's quantum field, but merely the geometry of the flux lines in 3D Euclidian space and demonstrate their actual counter geometry on the two poles of a magnet. The results of the measurements taken with the 3-axis magnetometer and their analysis will be discussed in the next section of our paper. Fig. 10. Magnetic attraction vs. ferromagnetic attraction difference demonstrated. (a) Small disk magnet is placed on top of a bar magnet side by side. Magnets get attracted and align themselves always when in this configuration, at their exact middle region where the Bloch domain wall axis is located and with both of the Bloch domain walls axes of the two magnets spatially coinciding and in parallel to each other. In contrast, iron disk and iron ring shown on the other sides of the block magnet get attracted by the magnet but always align and orient themselves to the path of minimum magnetic reluctance thus to the direction of the poles magnetization axis N-S of the magnet and perpendicular to the Bloch domain wall axis of the magnet. Notice also South Pole of small disk magnet on top is attracted by North Pole of bar magnet. (b) Bloch domain wall axis of the magnet indicated with a green line. (c) Same as in fig.10(a) but this time a ring magnet together with a disc magnet and a small sphere magnet was used. As before iron ring on top gets attracted and orients itself perpendicular to the Bloch domain wall axis of magnets. This inherent limitation of the ferromagnetic iron filings to align with the Bloch domain region of a magnet as demonstrated in fig.10, thus, they always align with strongest magnetic potential directions namely the two poles of a magnet, is the main reason why they fail to show any flux lines 7 MAGNETISM AND MAGNETIC MATERIALS JOURNAL 00 (2018) 000 -- 000 entering the Bloch domain region of a magnet. Therefore they fail to fully depict the quantum ground state field. On the other hand, the superparamagnetic single domain magnetite (Fe3O4) nanoplarticles inside the nanomagnetic ferrolens as demonstrated in the previous pages don't have these kinds of limitations iron filings have. Because they are single domain superparamagnetic [4,5] in nature and their high sensitivity, they can align with any flux line trajectory of the field of a magnet. Therefore, they're operating more on the quantum level thus able to depict accurately the quantum field of a magnet. The nanoparticles inside the ferrolens actually behave more like the small disk magnet on top of the bar magnet shown in fig.10(a) and not as the iron filings emulated by the iron ring in the same above figure. Moreover, as shown in our previous research [1], these nanomagnetic particles in a thin film ferrofluid configuration while encapsulated inside the ferrolens are not subject of Brownian motion. As shown in our pervious paper [1] strong Van der Waals forces [7] essentially nullify Brownian motion and the nanoparticles inside the ferrofluid carrier are hold in a state of equilibrium. The encapsulated thin film of ferrofluid inside the ferrolens in this state, does not flow, but exists in a balanced state of equilibrium no matter what position the cell is oriented. The nanoparticles inside the ferrolens do not settle with gravity. More in detail, the anionic surfactant coating [8] on the nanoparticles keeps the particles from touching each other (i.e. clumping or agglomeration) in the free state when there is no external magnetic field present. Notice here that the generated Van der Waals forces in the ferrofluid are not attractive but due to steric repulsion [9] results to stabilization. Therefore, the nanoparticles movement is essentially we can say is dictated only by their induced by an external magnetic field magnetic moment according to their Néel relaxation time calculated [1,9,10] from equation (1), (1) (2) for which fo , and K are the frequency constant of Néel relaxation (Larmor frequency), and the anisotropy constant of the particle, respectively and T the temperature in Kelvin units. Whereas VN is the Néel particle volume size and is given by (2) equation, where R = d/2 is the magnetic particle radius. Although Néel relaxation time is more important for the response time of the ferrolens for dynamic magnetic fields, it still plays a significant role when the ferrolens is used in magnetostatics research and applications where real-time response is always desirable. Such, as for example, experiments which involve moving magnets or magnetic dipole interaction between magnets. In general, a small value of Néel relaxation time is needed in order for the ferrolens to display the information in real- time. As we have proven in our previous work the ferrolens with the 10nm particles can respond in real-time for dynamic magnetic fields or fast transient states up to 5MHz [1]. Concerning the optical and photonic properties of the ferrolens, the multiple different colored lines shown in some ferrolens configurations such for example in fig.3(b) is because a multiple colored RGB LED light strip source was used and these lines are not product of interference of light reflecting on the ferrolens surfaces. Color of lines is most dependent from light source color and tint slightly changes depending magnetic polarization of nanoparticles. As we have shown when white LED light is used, the result is lines to have same uniform color all over the ferrolens surface. Optical light refraction index of the ferrolens is very small. Depending the carrier fluid (specially water based) used, can go up to 90% transparency as measured for all colors of light used in the ferrolens as demonstrated by the spectrograph in fig.11 below (all data measurements and excel graph can be found in this link5 for download,). Fig. 11. (a) Looking through an inactivated ferrolens (i.e. no external magnetic field is applied) to a pattern behind. (b)_Spectrograph of a water based carrier fluid ferrolens through visible light spectrum. Red line is the reference spectrum obtained without the 50 μm thin film of ferrofluid inside the lens (i.e. two 2mm thick optical grade glass disks put together). Blue line represents the compete ferrolens with the encapsulated thin film of ferrofluid. As shown in the graph measured transparency did not drop below 90% at any point of the visible light spectrum. Therefore, light refraction index is controlled almost exclusively by magnetic polarization of ferrolens [11,12] by the external magnetic field induced. Light dispersion effects [13] are also kept minimal due to the 50 microns or less transparent thin film and the two parallel optic-quality glasses used in the ferrolens which will mostly cancel out any small dispersion they may have. For the notion that the lines we see in the ferrolens could be perpendicular 90° to the actual magnetic flux lines at the xy 2D plane, the answer is that this is highly improbable to impossible to happen since we use uniform 360° omnidirectional lighting on the ferrolens and therefore if the above was the case that would totally mess up the display and no consistent geometrical pattern would be shown by the ferrolens. In addition, the magnetic flux lines we see in the ferrolens would not end up at the physical locations where the poles of the magnet are (i.e. the two black holes depicted by the ferrolens). The theoretical argument also of if gyromagnetic precession (i.e. Larmor frequency) [3,14] calculated by equation (3) on this new observed by the ferrolens quantum field geometry, is maintained, can be positively 5 Excel graph data of fig.11: https://tinyurl.com/y9dvxr9a 8 MAGNETISM AND MAGNETIC MATERIALS JOURNAL 00 (2018) 000 -- 000 answered since the new geometry observed by the ferrolens basically consists of two joined hemispheres making up a sphere (fig.8). (3) Where γ is the gyromagnetic ratio and Β an external magnetic field. Notice in equation (3) the 2π factor essentially describing the circle, remains unchanged in the new observed geometry by the ferrolens of the quantum field of a magnetic dipole. Changing page, the measurements taken with the 3-axis magnetometer on the prototype special magnetic ring array constructed, shown previously in fig.4, emulating the toroid-vortex geometry of the quantum field of a magnet shown by the ferrolens specially at fig.6, 7(a) and 9, confirmed the elliptical trajectory of the flux lines on the poles of a magnet closing circuit between each pole and the Bloch domain region as demonstrated previously in fig.8. Also the geometrical rotation direction created by the skew angles of the magnetic flux lines trajectories on the poles was also confirmed, namely counter clockwise (CCW) trajectories on the North pole and clockwise for the South pole. The results are presented below in fig.12 with surface maps measuring magnetic field strength around the poles 360° in a circle of the vortex geometry constructed magnetic ring array. Measurements were taken at 30° angular distance intervals around each pole. in mV with the resolution of the used 3D-axis magnetometer thus, 143 mV per 1 μTesla. The individual measurements values taken with the 3- axis magnetometer can be found in this link6. To illustrate more clearly both flux trajectories happening on the different poles of a dipole magnet North and South as we have observed with the ferrolens and confirmed with the magnetometer experiment, the following graphical two hyperboloids as shown. Two counter symmetrical flux trajectories are drawn sliding on the surfaces of the hyperboloids in fig.13(a), each for one pole on a magnet. Fig.13(b) also illustrates the counter geometrical rotation of the flux lines on the two different poles of the magnet North and South Pole. The joint area where the two hyperboloids meet in both illustrations fig.13(a)(b), represents the Bloch region of the quantum field of a magnet. illustrations are presented in fig.13(a)(b) using Fig. 12. Surface maps of magnetic field strength on the two poles of prototype special ring array emulating toroid-vortex structure of observed with the ferrolens quantum field of dipole magnets. Measurements were taken, with a 3-axis magnetometer at 30° angular intervals in a circle indicated with little humps or dips of the surface maps. Both maps have a slope evidently of the vortex geometry of the quantum field in the poles of a magnet. Also the counter behavior of the two poles is shown clearly by these surface maps. (a) North Pole surface map. A 2D projection of a single flux line ellipsoid trajectory (i.e. black ellipsoid) is drawn over the surface map by following the individual measurement points and the slope of the map, confirming therefore observations shown by the ferrolens previously of the flux lines geometry and trajectory on the poles of a magnet. Also the turned position of the map on X-axis indicates a CCW rotation geometry of the flux at the North Pole. (b) South Pole surface map. Same as before in fig. 12 (a) but this time the counter behavior of the two poles is evident. The position of the South Pole surface map indicates a CW rotational geometry of the flux lines trajectories on the South Pole of a magnet as shown by the ferrolens (see fig. 9b). We mapped the surface of the prototype ring magnet, shown on fig.12 on the xy plane using a position digitizer. The Z-axis on the above maps of fig.12 indicates magnetic field strength measured in μTesla units. The μTesla values are calculated by dividing each value shown on the Z-axis Fig. 13. (a) Graphical Illustration using two hyperboloids as shown, of the individual magnetic flux trajectories geometry on the two poles of a magnet, each hyperboloid representing one pole of the magnet. Bloch ground state region of the quantum field of a magnet is shown here as the joint area of the two hyperboloids. The counter directional behavior of the flux trajectories on the different poles of the magnet is apparent. (b) A second illustration indicating generally the counter geometrical rotation of the flux on the two poles of a magnet. Red arrow CCW rotation geometry for the North Pole and Blue arrow CW rotation for the South Pole of a magnet. By graphical extrapolation of all the data mining we collected during this research with the ferrolens and magnetometer experiment and using graphical interpolation methods, the final graphical synthesized image of 6 Three-axis magnetometer measurements: https://tinyurl.com/yapq8o8u 9 MAGNETISM AND MAGNETIC MATERIALS JOURNAL 00 (2018) 000 -- 000 the vortex-toroid geometry of the quantum field of a dipole permanent magnet in 3D Euclidian space is illustrated as below at fig.14. Fig. 14. Quantum field geometry in 3D Euclidian space of a dipole magnet as observed with the ferrolens. 5. Conclusions Modern nanomagnetic direct observation devices for magnetic fields in general like the ferrolens or else known as ferrocell, give us the opportunity to observe more closely the magnetic field. Including the depth of field information of a magnet, which is actually considered a quantum mechanics device itself. Since magnetism falls more into and is described best today by quantum mechanics as a quantum effect than by electromagnetism general theory, a nanomagnetic real-time observation device would be the best choice for depicting the actual of what we call the quantum field of a magnet. As such, the nanomagnetic ferrolens using single domain (i.e. superparamagnetism) particles described herein, follows more precisely and in detail the magnetic flux of a magnet operating more at the quantum level and has not the limitations as we described and proved of the classical iron filings experiment which shows only a macroscopic imprint of the magnetic field, failing to depict quantum effects in the field of a magnet such as its Bloch domain wall region. Novel observations of the field of magnet using the ferrolens were made, never seen before and with some surprising results. Although basically, the spherical geometry of the field of a magnet was confirmed, a closer examination at the Bloch region of the field of a magnet, made possible by the ferrolens, reveals that the actual geometry of the quantum field of a magnet consists of two separate magnetic bubbles toroid shaped, each around each pole of a dipole magnet placed back to back with both bubbles nearly tangent at the ground state Bloch region of the magnet (i.e. middle of magnet fig.8 & fig.14). Essentially the quantum magnetic field of a magnet consists of two hemispheres. Further observation of the individual flux lines trajectory inside these toroid fields we described, on the two poles of a dipole magnet North and South pole, revealed a skewed ellipsoid trajectory geometry [15] inside 3D Euclidian space for each magnetic flux line, closing circuit around each pole and the Bloch region. Additionally, this skewed flux creates elementary vortex geometry on the two distinct toroidal fields with counter rotational vectors (fig.13). The above observations were confirmed with a 3-axis magnetometer on a prototype magnetic ring array which emulates this above described and observed with the ferrolens, complementary counter rotational toroid- vortex geometry of the quantum field of a dipole magnet. Any argument of whether it is possible, the flux lines observed in the ferrolens to be products of light interference and other optical phenomena, were examined and proven invalid experimentally and theoretical and that light polarization in the ferrolens is exclusively controlled correspondingly, by the external magnetostatic field induced in the ferrolens. Furthermore, gyromagnetic precession (i.e. Larmor frequency) is maintained in this new observed field geometry by the ferrolens since it basically consists of two joined hemispheres (fig.8). We believe that our research presented on this paper here but also our previous work [1] with this new and exciting, modern version of the iron filings experiment, nanomagnetic direct observation device for magnetic fields in general called ferrolens, will be taken under serious consideration and study. That might propel research with the potential to lead to new breakthrough discoveries unveiling the true nature of magnetism. Acknowledgements We like to thank Mr. Iraklis Rigakis, academic staff, for his assistance in the construction of the prototype magnetic ring array used in the experiments of this research. Also we like to thank Dr. John Chatzakis, academic staff for his support. References [1] [2] [3] E. Markoulakis, I. Rigakis, J. Chatzakis, A. Konstantaras, E. Antonidakis, Real time visualization of dynamic magnetic fields with a nanomagnetic ferrolens, J. Magn. Magn. Mater. 451 (2018) 741 -- 748. doi:10.1016/j.jmmm.2017.12.023. A. 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Neumann, Applications of net repulsive van der Waals forces between different particles, macromolecules, or biological cells in liquids, Colloids and Surfaces. 1 (1980) 45 -- 56. doi:10.1016/0166-6622(80)80037-0. S.H. Ebaadi, Van der Waals interaction between surfactant-coated and bare colloidal particles, Colloids and Surfaces. 2 (1981) 155 -- 168. doi:10.1016/0166- 6622(81)80005-4. R.E. Rosensweig, Rosensweig, Ronald E. Ferrohydrodynamics. Courier Corporation, in: Courier Corporation, 2013: pp. 46 -- 50. https://tinyurl.com/yb5jux2x. [11] [12] R.E. Rosensweig, M. Zahn, R. Shumovich, Labyrinthine instability in magnetic and dielectric fluids, J. Magn. Magn. Mater. 39 (1983) 127 -- 132. doi:10.1016/0304- 8853(83)90416-X. Alberto Tufaile, Timm A. Vanderelli, and Adriana Pedrosa Biscaia Tufaile, "Light polarization using ferrofluids and magnetic fields." Advances in Condensed Matter Physics, Condens. Matter Phys. 2017. (2017). doi:10.1155/2017/2583717. S.S. Nair, S. Rajesh, V.S. Abraham, M.R. Anantharaman, Ferrofluid thin films as optical gaussmeters proposed for field and magnetic moment sensing, Bull. Mater. Sci. 34 (2011) 245 -- 249. doi:10.1007/s12034-011-0059-7. [13] M. Born, E. Wolf, Principles of optics: Electromagnetic Theory of Propagation, Interference and Diffraction of Light, 1994. doi:10.1016/S0030-3992(00)00061-X. [14] M.. Levitt, Spin Dynamics: Basics of Nuclear Magnetic Resonance, 2000. doi:10.1002/cmr.a.20130. [15] M.A. Berger, G.B. Field, The topological properties of magnetic helicity, J. Fluid Mech. 147 (2006) 133. doi:10.1017/S0022112084002019. Please cite this article as: E. Markoulakis, A. Konstantaras, E. Antonidakis, The Quantum Field Of A Magnet Shown By A Nanomagnetic Ferrolens, Journal of Magnetism and Magnetic Materials (2018), doi: https://doi.org/10.1016/j.jmmm.2018.07.012 10 [5] [6] [7] [8] [9]
1912.12865	1	1912	2019-12-30T09:47:59	Temperature dependent threshold for amplified emission from hybrid lead perovskite films	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	The optical amplification emission of hybrid lead perovskite attracted great research interests. We systematically examined and compared temperature dependent optical amplification behavior of a series of organic-inorganic hybrid perovskite films of (MA/FA)Pb(Br/I)3. The optical amplification threshold of the films showed considerable exponential increase towards the temperature increasing. We figured out that the critical temperature for the four films presented a sequence of FA+I < MA+I < FA+Br < MA+Br. Our systematical study is crucial for in depth understanding the fundamental mechanism of amplified emission of hybrid perovskite materials.	physics.app-ph	physics	Temperature dependent threshold for amplified emission from hybrid lead perovskite films Yang Liu(刘洋)1, Ju Wang(王雎)1, Ning Zhu(朱宁)1, Wei Liu(刘伟)1, Cuncun Wu(吴存存)1, Congyue Liu(刘聪越)1, Lixin Xiao(肖立新)1, Zhijian Chen(陈志坚)1, Shufeng Wang(王树峰)1,2* 1 State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871, China. 2 Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China. Abstract The optical amplification emission of hybrid lead perovskite attracted great research interests. We systematically examined and compared temperature dependent optical amplification behavior of a series of organic-inorganic hybrid perovskite films of (MA/FA)Pb(Br/I)3. The optical amplification threshold of the films showed considerable exponential increase towards the temperature increasing. We figured out that the critical temperature for the four films presented a sequence of FA+I < MA+I < FA+Br < MA+Br. Our systematical study is crucial for in depth understanding the fundamental mechanism of amplified emission of hybrid perovskite materials. PACS: Hybrid lead perovskites were recently found exhibiting extraordinary optical amplification properties, which was regarded as optically pumped amplified spontaneous emission (ASE). It has been demonstrated in a variety of sample morphologies such as polycrystalline thin films,[1-8] nanocrystals,[9- 12] nanowires,[13, 14] microcavity,[15, 16] microplates,[17-19] quantum dot,[20, 21] and distributed feedback cavity.[21, 22] The balanced charge transport and high gain characteristics of these hybrid perovskite materials make them the promising materials as optical gain media. These materials are also with many excellent properties like low-cost fabrication processes,[23, 24] strong light absorption, efficient photoluminescence,[25, 26] and long carrier lifetimes and diffusion lengths[27] have had numerous applications in optoelectronic devices beyond solar cells, including light-emitting diodes,[28] lasers,[29] and photodetectors.[30] The high applicative interest of optical amplification emission phenomena from the solution- processed perovskites thin films stimulated the need for a systematical and clear understanding. The researches on its fundamental mechanism is still limited.[5, 7, 31] E.g., multiple phases with distinct optoelectronic properties existed in hybrid perovskites make it complicated to understand.[31-33] To understand the critical factors of optical amplification emission phenomena, the investigation of the optical properties as a function of the temperature is a very powerful tool. The systematic study for a series of hybrid perovskite thin films with its temperature related behavior is missing and ask for investigation to understand their behaviors. In this paper, we report the systematic investigation of the temperature dependent ASE of the optical amplification from the films of four core hybrid lead perovskites, MAPbI3, FAPbI3, MAPbBr3, and MAPbBr3. Our study providing new view to the issue and fundamental support for application of amplified emission. The perovskite films were deposited with flash evaporation technology, which applied a vacuum chamber was utilized for vacuum-assisted annealing of the samples after spin coating the mixture of perovskite precursor solution onto a glass substrate.[34] The films were annealed on a hot plate at 100℃ for 20 min. The morphology and crystallinity of the perovskite films were inspected by SEM (Fig. 1a- d). The as-formed perovskite films has full surface coverage on the substrates, with a grain size of about 300 nm −10µm. Fig. 1 Scanning electron micrograph (SEM) of the top surfaces of (a)MAPbI3, (b)MAPbBr3, (c)FAPbI3 and (d)FAPbBr3 films. The samples were mounted in a cryostat and cooled by feeding with liquid nitrogen. Femtosecond excitation pulses at 400nm, with frequency doubled from a Ti:sapphire regenerative amplifier that operates at 800 nm with 30 fs pulses with a repetition rate of 1 kHz (Coherent), were employed to excite the fluorescence. Since the lifetime is dependent to the excitation pulse energy, we applied time-resolved photoluminescent spectra through a streak camera system (Hamamatsu, ~20 ps resolution). Only the initial spectra at time zero are collected for further analysis. The emission spectra at different temperature and excitation densities, were used to determine the temperature-dependent ASE in our samples. Fig. 2 shows the emission spectra from the four thin films at room temperatures (300 K). Taking Fig. 2(a) as example (MAPbI3), When Pexc was < 4.0 µJ/cm2, the emission spectra showed similar broad peaks centered at ~760 nm with FWHM ~30 nm. When Pexc was > 5.0 uJ/cm2, a sharp emission band at 799.5 nm emerged from the red wing of the broad fluorescent spectra. The intensity of the new peaks at 799.5 nm grew fast towards the increment of pump energy, while the broadband fluorescent emission at 760 nm remained almost identical, when Pexc increased from 5.0 to 7.9 uJ/cm2. Similar behavior can be observed from MAPbBr3, FAPbI3, and FAPbBr3 films. One noticeable difference for the FAPbBr3 film to other samples is that its narrow peaks has much less red shift towards the broadband fluorescent peaks at ~552nm. The optical amplification features obtained from MAPbI3, MAPbBr3, FAPbI3, and FAPbBr3. Such behavior had been observed in other studies without systematic analysis. [4, 5, 8, 12] The temperature and pump intensity dependent peak shift can be found in supporting information (SI) Fig. 2 The distinct excitation density dependent emission spectra from perovskite thin films based on (a)MAPbI3, (b)MAPbBr3, (c)FAPbI3, and (d)FAPbBr3 at room temperatures (300 K). The peak intensities increased towards the excitation density shows up a clear slope variation due to the appearance of ASE (see Fig. 3). The temperature dependent ASE threshold of the four films were estimated by fitting the ASE increment. The optical amplification threshold at room temperature (Fig. 4). As the temperature increases, we observe that the optical amplification threshold shows a curved continuous increase. Fig. 3 The total intensity dependence of (a)MAPbI3, (b)FAPbI3, (c)MAPbBr3 and (d)FAPbBr3 films on the excitation density. The exponential temperature dependence of the current threshold in semiconductor diode lasers is empirically well-known as the following formula: [35] 𝑃th = 𝑃0 ∙ exp ( 𝑇 𝑇0 ) Where 𝑇 is the temperature, 𝑇0 is the characteristic temperature, and 𝑃0 is the threshold when 𝑇 approaches zero. It is concluded in considering the exponential temperature dependent threshold resulting from the gain parameter and internal loss variations. The value of 𝑇0 empirically represent the temperature-dependent sensitivity of threshold taking into account various factors. As seen in Fig. 4a-d, there are good agreement between the measurements and the fit, yielding various characteristic temperatures of MAPbI3 (𝑇0 = 56K), FAPbI3 (𝑇0 = 42K), MAPbBr3 (𝑇0 = 97K), and FAPbBr3 (𝑇0 = 68K) films respectively. For traditional semiconductor diode lasers, the values of T0 are usually larger (~150-180K).[35] The measured values of 𝑇0 in the 40 -- 100 K range always mean significant change of the amplification threshold between 300 and 400K, the usual operating temperature range of lasers. By comparing these results, we could suggest that the perovskite with iodine has lower characteristic temperature to the ones with bromine, while the FA+ brings the lower characteristic temperature towards the ones with MA+. These difference indicate various sensitivities of the four perovskite to the temperature. 050100150200250Excitation Intensity (uJ/cm2)(d) FAPbBr3 80 100 120 140 160 180 200 220 240 260 280 300 3200510152025(b) MAPbBr3 80 100 120 140 160 180 200 220 240 260 280 300 320 340 360020406080100(c) FAPbI3 80 120 160 200 240 280 300 310 320 330 34005101520(a) MAPbI3PL Intensity (a.u.) 80 120 160 200 240 260 280 290 300 310 320 330 340 350Fig. 4 The temperature dependent amplification threshold of (a)MAPbI3, (b)MAPbBr3, (c)FAPbI3 and (d)FAPbBr3 films. In conclusion, we systematically investigate the temperature dependent ASE threshold of four core organic-inorganic lead perovskite. Our results suggest that the ASE thresholds of perovskite thin films show exponential increase as the temperature increases. The exponential temperature dependence of the threshold yield various characteristic temperatures of MAPbI3 ( 𝑇0 = 56K ), FAPbI3 ( 𝑇0 = 42K ), MAPbBr3 (𝑇0 = 97K) and FAPbBr3 (𝑇0 = 68K) films respectively. Our results provide useful insights into the optical properties of hybrid perovskites, promoting their future applications in optoelectronic devices. 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Fig. S1 The temperature and excitation density dependent emission peak of (a)MAPbI3, (b)FAPbI3, (c)MAPbBr3 and (d)FAPbBr3 films. 1101001000540545550555560565(d) FAPbBr3 80 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380Excitation Intensity (uJ/cm2)0.1110100530540550560(c) MAPbBr3 80 100 120 140 160 180 200 220 240 260 280 300 320 340 360110100780790800810820830840(b) FAPbI3 80 120 160 200 240 280 300 310 320 330 3400.1110100750760770780790800(a) MAPbI3 80 120 160 200 240 260 280 290 300 310 320 330 340 350Emission peak (nm)
1912.02219	2	1912	2019-12-22T21:52:35	Strain-Engineered High Responsivity MoTe2 Photodetector for Silicon Photonic Integrated Circuits	[ "physics.app-ph", "physics.optics" ]	In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically-relevant properties leading to strong light-matter-interaction devices due to effects such as reduced coulomb screening or excitonic states. However, no efficient photodetector in the telecommunication C-band using 2D materials has been realized yet. Here, we demonstrate a MoTe2-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W) operating at 1550nm on silicon photonic waveguide enabled by engineering the strain (4%) inside the photo-absorbing transition-metal-dichalcogenide film. We show that an induced tensile strain of ~4% reduces the bandgap of MoTe2 by about 0.2 eV by microscopically measuring the work-function across the device. Unlike Graphene-based photodetectors relying on a gapless band structure, this semiconductor-2D material detector shows a ~100X improved dark current enabling an efficient noise-equivalent power of just 90 pW/Hz^0.5. Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.	physics.app-ph	physics	Strain-Engineered High Responsivity MoTe2 Photodetector for Silicon Photonic Integrated Circuits R. Maiti1, C. Patil1, T. Xie1, J.G. Azadani2, M.A.S.R. Saadi3, R. Amin1, M. Miscuglio1, D. Van Thourhout4, S.D. Solares3, T. Low2, R. Agarwal 5, S. Bank 6, V. J. Sorger1* 1Department of Electrical and Computer Engineering, George Washington University, Washington, DC 20052, USA 2Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455, USA 3Department of Mechanical and Aerospace Engineering, George Washington University, Washington, DC 20052, USA 4Department of Information Technology, Ghent University - IMEC, Technologiepark Zwijnaarde 126, 9052 Gent, Belgium 5Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA 6Department of Electrical and Computer Engineering, University of Texas, Austin, TX 78758, USA Corresponding Author E-mail: [email protected] Abstract In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically- relevant properties such as electrostatic tunability and strong light-matter interactions. However, no efficient photodetector in the telecommunication C-band has been realized with 2D transition metal dichalcogenide (TMDCs) materials due to their large optical bandgap. Here, we demonstrate a MoTe2-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W) operating at 1550 nm on silicon micro ring resonator enabled by strain engineering of the transition-metal-dichalcogenide film. We show that an induced tensile strain of ~4% reduces the bandgap of MoTe2, resulting in large photo-response in the telecommunication wavelength, in otherwise photo-inactive medium when unstrained. Unlike Graphene-based photodetectors relying on a gapless band structure, this semiconductor-2D material detector shows a ~100X improved dark current enabling an efficient noise-equivalent power of just 90 pW/Hz0.5. Such strain-engineered integrated optoelectronic systems. integrated photodetector provides new opportunities for Keywords: Integrated Photonics, Tensile strain, KPFM, work function, TMDCs, photodetector, microring resonator 1 Introduction Strain engineering of traditional semiconductors like Si/Ge and III-V semiconductors can be utilized to enhance the performance of electronic and photonic devices [1-3]. By inducing strain, the electronic band structure can be modified by epitaxial growth techniques to control the lattice constant, which, for example, can enable a reduction of the effective mass and, thus, positively impacting mobility [4,5]. Lowering the dimensionality from bulk crystals to 2D layered films, can enable the material to sustain higher amounts of strain. A straightforward method to achieve strain in 2D nanocrystals is through mechanical bending, such as transferring them onto flexible substrates or wrapping them around a pre-patterned structure [6-9]. Under small (<2%) compressive (tensile) strain, the bandgap increases (decreases) and can even induce a semiconductor-to-metal phase transition (10% for monolayer) in MoS2 [10]. Furthermore, a strain-induced exciton redshift and exciton funnel effect are present in few-layer MoS2 crystals [11,12]. Recently, it was shown that strain can strongly modulate the bandgap energy (~70 meV) of monolayer MoTe2 and MoWTe2 for 2.3% of uniaxial strain [13]. Beyond such pioneering demonstrations, there is however a lack of experimental evidences of strain-induced bandgap engineered optoelectronic devices for the telecommunication wavelength, which is needed to assess the potential of this class of materials as building blocks for the future integrated photonic platform. An integral device for photonic circuitry supporting a plethora of applications, such as sensing, data communication, and general signal processing is a monolithically integrated photodetector operating at near-infrared (NIR) [14-17]. The wavelength of 1550 nm is a prominent spectral choice since it a) overlaps with the gain spectrum of erbium-doped-fiber-amplifiers, and b) is transparent for foundry-based silicon photonics. The current state-of-the-art NIR photodetectors utilize InGaAs, InP, and Ge due to their high absorption (>90%) at telecommunication wavelengths [18-20]. However, III-V materials are not compatible with Si CMOS technology due to the complexity of growth, wafer bonding issues, and thermal budget. On the other hand, Ge photodetectors typically show higher noise due to the presence of defects and a dislocation center at the Si-Ge interface during the epitaxial growth process [21]. In contrast, heterogeneous 2 integration of 2D materials with photonic platforms bears several advantages including strong exciton binding energy, unity-strong index tunability and CMOS compatibility due to lattice matching requirements (weakly bonded van der Waals forces) [22-27]. The prominent example of Graphene-based integrated photodetectors, while being functional has a fundamental challenge to achieve low dark current due to the gapless band structure when operated in the photoconductive mode [23]. On the other hand, black phosphorus (BP), a 2D nanocrystal of phosphorus, shows high responsivity and low dark current at 1550 nm [20]. However, the low stability under ambient conditions, limits its application [28]. In this work, we demonstrate a strain-engineered photodetector based on heterogeneously integrating a multi-layer (ML) 2H-MoTe2 crystal flake atop a silicon microring resonator (MRR). Straining the ML MoTe2 red-shifts the bandgap from 1.04 eV down to 0.8 eV, thus enabling absorption at the photonic integrated circuit (PIC)-relevant wavelength of 1550 nm. Intentionally wrapping a MoTe2 nanocrystal around a non-planarized waveguide induces local tensile strain overlapping with the waveguide's optical mode. We measure a photo responsivity of 10 mA/W (40nm thick) and 0.5 A/W (60 nm thick) at -2 V. The device shows a low dark current of just 13 nA, a noise equivalent power (NEP) of 90 pW/Hz0.5, and operates up to ~35 MHz. Such strain- engineered photodetectors using 2D-materials that are integrated with established photonic platforms could potentially open up a new class of optoelectronic components. Results & Discussions: Continuous tuning of physical properties by controlling the mechanical deformation, such as strain, offers possibilities for significantly modifying both the electronic and photonic properties of 2D materials [29, 30]. Here, our approach is to exploit strong local uniaxial strain towards reducing the optical bandgap of ML MoTe2 nanocrystals co-integrated onto Si photonic waveguide-based structures. As an example, we show that such setup enables photodetection at the technologically-relevant wavelength of 1550 nm (Fig. 1). Bulk MoTe2 is an indirect gap semiconductor with a bandgap of 1.04 eV, where the conduction band minimum lies along K- symmetry line and the valence band maximum is located at the K point. Naturally, pristine ML (non-strained) MoTe2 is associated with low absorption at 1550 nm resulting in low photo 3 Figure 1. Microring resonator integrated photodetector a) Schematic illustration of a microring resonator (MRR) integrated MoTe2 photodetector. b) Schematic diagram of bent 2D nanocrystal on top of non-planarized waveguide (bending width=w, height=h and thickness=), introducing strong localized tensile strain in region A (red marked), whereas, the unstrained region is marked as region B (dark blue marked). Simulated mode profile for MoTe2 integrated waveguide for transverse magnetic (TM) mode, where the cross-sectional structure is extracted from an AFM micrograph. c) Optical micrograph of the device (top view) where few layers of MoTe2 nanocrystal are integrated onto a non-planarized Si microring resonator (Radius=40 μm, height h=220 nm and width w=500 nm) with a spacing layer of ~10 nm thick Al2O3 by using a 2D printer technique [33]. Ti/Au was deposited as electrical contact pads on both sides of the ring resonator to facilitate efficient collection of photogenerated charge carriers. d) AFM topography of the active device area showing the thickness of the flakes ~40 nm (height profile in inset). responsivity of only a few mA/W due to a roll-off in the absorption edge, as demonstrated by a flat MoTe2 atop a planarized waveguide (Supplementary online information, section 6, Fig. S6). However, intentionally wrapping the 2D film around a non-planarized waveguide of height ~220 nm induces a localized tensile strain near the waveguide (Fig. 1a,b). Fundamentally, the performance of 2D material-based photonic devices is determined by the ability of the mode of optical waveguide to interact with the 2D nanocrystal. One typical approach to circumvent this limitation is to place the 2D film onto a planar waveguide and evanescently couple to the optical 4 mode so that optical interaction length is not only dictated by the 2D film thickness, but rather by its longitudinal length [31, 32]. Such brute-force device engineering, however, results in sizable device footprints, thus negatively impacting the electrical device performances, for example the energy-per-bit efficiency and RC response time, which are both adversely affected by increased electrical capacitance. To reduce the footprint and improve electrical performance, here, we integrate 2D nanocrystals with microring resonators (MRR), thus increasing the weak light-matter interaction (Fig. 1). Images of the device illustrate the precise placement capability of exfoliated MoTe2 flakes enabled by utilizing our in-house developed 2D material printer technique (Fig. 1c,d) and Supplementary online information Sections 1 & 2, and Figs. S1 & S2) [33], atop a thin (10 nm) Al2O3 layer acting as an electrical isolation layer between the silicon on insulator (SOI) photonic chip with the 2D nanocrystal. The optical mode at 1550 nm (Fig. 1b) couples with the MoTe2 layer through the evanescent field, leading to optical absorption and the generation of photo- generated carriers, which will be collected by the two metal electrodes made of Ti (5 nm)/Au (45 nm), contacted on opposite sides of the microring resonator (Fig. 1c). The channel length of this MoTe2 two-terminal photodetector is ~800 nm (waveguide width ~500 nm), where one of the electrical contacts is positioned ~100 nm away from the edge of the ring resonator to create a lateral metal semiconductor metal (M-S-M) junction that overlaps with the waveguide mode (Fig. 1b). Two exemplary devices with different dimensions of the 2D material (coverage length and thickness of the transferred flakes are 15 and 31 m and 40 and 60 nm, respectively), atop of ring resonator are discussed next (Fig. 1d). A representative current-voltage (I-V) curve shows efficient photodetection indicated by the 100:1 photo to dark current ratio at -1 V bias (Fig. 2a). The device is associated with low dark current ~13 nA at -1 V bias, which is about 2-3 orders and ~2 times lower compared to graphene and transition metal dichalcogenides (TMDCs)-graphene contacted photodetectors, respectively [26, 27] (Supplementary online information, section 11, Table S1). The symmetric nature of the I-V curve indicates the formation of two back-to-back (Ti/MoTe2) Schottky junctions. The working principle of this detector is photocarrier generation across the bandgap, where the applied 5 voltage bias across the 2-terminal contacts enables charge carrier separation (Fig. 2b); at equilibrium, the work function (4.3 eV) of titanium ensures Fermi level alignment with the p- doped MoTe2 [26] (Fig. 2 b,i). The formation of the Schottky barrier at the junction suppresses carrier transport, thus resulting in low dark current. With applied bias voltage, the potential drop across the junction reduces the Schottky barrier height (Fig. 2b, ii)). Upon illumination of the laser source, the generated photocarriers separate due to the formation of a built-in potential inside the junction, resulting in a photocurrent. In order to obtain the photo-responsivity, we test the detector's response as a function of waveguide input power and bias voltage (Fig. 2c,d). After calibrating for coupling losses (Supplementary online information, section 10, Fig. S10), we find an external responsivity (i.e. Iphoto/Pinput) of 10 and 468 mAW−1 at -2 V for device 1 (MoTe2 dimensions: thickness = 40 nm, MRR coverage length = 15 m) and device 2 (thickness = 60 nm, MRR coverage length = 31 m), respectively, which is 1.75 times higher compared to a waveguide integrated MoTe2 detector tested at 1310 nm [26] (Supplementary online information, section 11, Table S1). The high responsivity of these MoTe2 detectors operating at 1550 nm can be attributed to enhanced absorption from 1) the strain-engineered lowered bandgap, and 2) from the MRR photon lifetime enhancement proportional to the finesse of the cavity (Supplementary online information, section 3, Fig. S3). The responsivity varies linearly as a function of bias voltage, corresponding to a back-to-back (M-S-M) junction and shows that the device is not driven yet into saturable absorption at these power levels (Fig. 2c&d). The external quantum efficiency (EQE) can be determined by, EQE = Rhc/q, where, R, h, c, q, and  are the responsivity, Planck constant, speed of light in vacuum, elementary electron charge, and operating wavelength, respectively. The EQE's for these two devices are 1% (device 1) and 37% (device 2) at -2 V (Fig. 2d). The variation of responsivity as a function of optical input power shows a flat response until Pin=30 μW, where state-filling blockage sets- in as the generation of excess carriers increases the radiative recombination for higher power (Pin) in the waveguide (Fig. 2e). We first consider the impact of the microring resonator on the detector's performance; when operated at a fixed power of 20 μW at different bias voltages, we find a ~50% enhanced 6 Figure 2. Photoresponse of the Au/MoTe2/Au integrated on MRR a) Typical I-V characteristics (semi-log plot) of Au/MoTe2/Au diode showing ~2 orders of magnitude enhancement for light conditions (red) as compared to dark (black), b) Schematic energy band diagram explains the photodetection mechanism: i) under equilibrium state, and ii) under bias showing the flow of charge carriers upon excitation. c) Photocurrent vs incident optical power showing the responsivity of the device of ~10.3 mA/W at -2 V, d) Responsivity and external Quantum Efficiency (EQE) as a function of bias voltage for two devices (device 1 thickness-40 nm & coverage length-15 m and device 2-thickness- 60 nm & coverage length-30.7 m), showing symmetric linear variation due to M-S-M device configurations. Zoomed-in responsivity and EQE plot for device 1 (inset). e) Responsivity of the Au/MoTe2/Au detector as a function of illuminated optical power for -1 v and -2 v, respectively. f) Spectral response of MRR integrated photodetector showing maximum responsivity at resonance wavelength (1550.75 nm) for -1V (open squares) and -2V (closed spheres) when the optical transmission (closed red squares) is minimum. Photodetector showing ~50% photocurrent enhancement compared to off-resonant conditions (1549.65 nm). Spectral response of MoTe2 integrated non- planarized straight (not MRR) waveguide is shown in blue closed triangles as a reference. photocurrent ON (vs. OFF) resonance, which matches the MRR's finesse of ~1.6 (Fig. 2f and supplementary online information, section 4, Fig. S4). However, the MRR integrated MoTe2 photodetector exhibits a ~1.2 times enhancement of the photocurrent at 1550.75 nm (on resonance), as compared to the straight waveguide photodetector (non-planarized) (Fig. 2f). (Supplementary online information, Section 5, Fig. S5). We note that while a MRR with a higher finesse will improve responsivity, yet it can reduce the detector's 3dB response speed due to a longer photon cavity lifetime, if the latter is the limiting factor and not the carrier lifetimes (i.e., relating to the gain-bandwidth product figure of merit of photodetectors). 7 Figure 3. Mechanism of enhanced photocurrent. Measured photocurrent as a function of incident light power and electric bias at room temperature for a (a) planarized & (b) non-planarized (schematic shown in inset of Fig. 3a and 3b respectively) MoTe2 photodetector at 1550 nm. Bulk band structure of (c) pristine and (d) 4% strained MoTe2 calculated using DFT showing lowering of the bandgap. the valence band maximum is set to zero. e) An average of several KPFM scan lines across the waveguide. The change in work function is attributed to the strain imparted by the waveguide on the MoTe2 flakes. The non-uniformity in work function in region A is due to the asymmetric nature of the strain in the flakes around the waveguide. A map of work function of the strained flakes obtained by Kelvin probe force microscopy (KPFM) overlaid on topography shown in the inset of figure 3e. It is evident that the work function increases locally in regions where the flakes are strained by the waveguide geometry (on top and in close vicinity of the waveguide- region A in Fig. 1b), compared with the unstrained or flat region (located where the flakes come into contact with the substrate -- region B in Fig 1b). f) Variation of work function with different values of strain. Negative and positive strain values correspond to compressive and tensile strain, respectively. Side view of the crystal structure of bulk MoTe2 with its unit cell is shown by inset. Blue and maroon balls represent Te and Mo atoms, respectively. 8 Strain-induced modulation of the electronic bandgap in 2D semiconductors wrapped around a patterned substrate has previously been observed [34]. Our experimental observation of the enhanced photocurrent for the wrapped around detector versus the planarized control sample might have also benefitted from the induced-strains (Figure 3 a&b, (Supplementary online information, section 6, Fig. S6). Indeed, our calculated band structures by using first-principles density functional theory (DFT) for ML MoTe2 found the electronic gap to acquire a red-shift with tensile strains, potentially bridging the electronic gap with the telecom wavelength (Supplementary online information, section 7, Fig. S7). Subject to higher tensile strain, we note that the valence bands shift towards higher energies (at ). In addition, the conduction bands at the K and H points shift towards lower energies and become the conduction band minimum with equal energies (Fig. 3d). As a result, the bandgap reduces from 1.04 eV for pristine to 0.80 eV for strained MoTe2 (4%), yet the material remains an indirect band gap semiconductor (Fig. 3d). These DFT results suggest that tensile strain can open up interband optical transitions at the telecom frequency, with is otherwise forbidden in the unstrained case. These are consistent with our observed experimental findings of enhanced photoresponse at 1550 nm for strained (vs. pristine) photodetectors discussed above. To obtain a quantitative picture of strain-induced band structure modulation, we performed Kelvin probe force microscopy (KPFM), which measured local contact potential difference (CPD) between the 2D material and an AFM probe with nanometric spatial resolution [36]. The work function of the 2D materials can be derived from CPD, using the relation 𝑉𝐶𝑃𝐷 = 𝑡𝑖𝑝− 𝑠𝑎𝑚𝑝𝑙𝑒 −𝑒 , where φsample and φtip are the work functions of the sample and tip, respectively, and e is the electronic charge. This advanced AFM technique offers advantages over commonly used optical measurement techniques, including Raman and photoluminescence spectroscopy [34, 37, 11- 12], due to diffraction limited average spot size for collecting local information about the electronic structure of the material. The KPFM line scans of the device (Fig. 3e) shows a clear increase in work function atop the waveguide as compared to the flat unstrained region (corresponding region-B in Fig. 1b). The increment in the work function of MoTe2 (work function=0.08 eV) correspond to change of ~3% tensile strain as calculated by DFT (Fig. 3f). This mismatch in strain variation (with predicted 4% tensile strain) can be attributed to the nature of 9 DFT calculations where MoTe2 is in its isolated form, without considering the effects of substrates and environment [37, 38]. A similar work function change induced by strain and its detection by KPFM is reported for WS2 and graphene [37, 39]. The MoTe2 flakes deform across the waveguide and touch the substrate at different distances away from the waveguide, thus giving rise to asymmetric strain variation. For the detector performance, maximize the optical effective mode overlaps with the strained MoTe2 regions of reduced bandgap. Figure 4. Dynamic performance a) The device is operating in photoconductive mode showing low dark current due to strain-lowered bandgap (0.8 eV), which leads to low noise equivalent power of 90 pW/Hz0.5 at 2 V, b) AC photoresponse as a function of modulated frequency of light signal showing a 3dB cutoff frequency of 35 MHz, which is mainly limited by low transit time. Dynamic response measurement setup (inset). To understand the detection limit of the device, we determine the noise equivalent power (NEP) i.e., the amount of incident light power that generates a photocurrent equal to the noise current, NEP = in/R, where, in is noise current and R is the responsivity. Generally, at high signal speed, 10 there are mainly two sources of noise; i.e., shot noise ((2qId) and Johnson noise ((4kBT/Rsh), which contribute to the total noise current. However, for a photodetector operating at a photo conducting mode, shot noise always dominates over Johnson noise. Here, NEP is found to be ~ 90 pW/Hz0.5, lowest among the devices, although device 2 shows higher responsivity (high dark current) thus revealing the trade-off between sensitivity and noise current. However, our device shows ~2 orders higher sensitivity than graphene/Si photodetector [40] due to lower dark current when operating at photoconductive mode, and comparable sensitivity to NEP to BP photodetectors [41]. The variation of NEP shows a gradual decrease for higher bias voltage (Fig. 4a), enabling low light level sensing, which can be further improved by the formation of a p-n junction. We perform a dynamic response test of the detector using a modulated laser input (Fig. 4b). The modulated optical output is coupled into the device where the electrical output was measured through a radio frequency microwave (G-S) probe, and the normalized frequency response analyzed via the S21 parameter of the network analyzer (Fig. 4b). Our photodetector device displays a 3dB bandwidth of 35.6 MHz at 2 V. The response time of a cavity integrated photodetector is mainly governed by these three factors: i) carrier transit time (𝜏𝑡𝑟), ii) charge/discharge time of the junction capacitance (𝜏𝑅𝐶) and iii) photon lifetime (𝜏𝑐𝑎𝑣). Hence, the 2). Here, the temporal response of the detector is determined by, 𝜏𝑅 = √(𝜏𝑡𝑟 transit time is given by, 𝜏𝑡𝑟 = 𝑙2/2µ𝑉𝑏𝑖𝑎𝑠, where l is the channel length of the MoTe2 detector and 𝜇 is the carrier mobility. From top gated FET configuration, when the 2D nanocrystal is atop 2 + 𝜏𝑐𝑎𝑣 2 + 𝜏𝑅𝐶 the waveguide, the field-effect mobility is 1.2 cm2/Vs (Supplementary online information, section 9, Fig. S9). With a channel length of 0.8 μm, the transit time is found to be 3.2 ns. Conclusions In conclusion, we demonstrate a strain-induced absorption-enhanced 2D nanocrystal (MoTe2) silicon photonic microring-integrated photodetector featuring high responsivity of 0.01 A/W (device 1) and ~0.5 A/W (device 2) at 1550 nm, with a low NEP of 90 pW/Hz0.5. Subject to mechanical strain, the bandgap of MoTe2 shifts from 1.04 eV for unstrained to 0.80 eV for strained, when the 2D nanocrystal is wrapped around a non-planarized silicon waveguide. The 11 local enhancement of the work function mapped out by KPFM, confirms a local change of electronic structure of the material due to strain. The device responsivity can be further improved using a high-Q cavity resonator. We observe 3dB bandwidth of 35 MHz, where the response time is transit time-limited. This strain engineered bandgap enables optical absorption at 1550 nm, resulting in an integrated photonic detector that could potentially open up a new pathway for future on-chip photonic circuits. Methods Density Function Theory (DFT) study The first-principles density functional theory (DFT) calculations were performed as implemented in the Vienna ab initio simulation package (VASP) [42]. The exchange correlation energy is described by the generalized gradient approximation (GGA) using the Perdew-Burke-Ernzerhof (PBE) functionals [43]. Since DFT usually underestimates the bandgaps of semiconductors, we used the HSE06 hybrid functional [44] for the exchange-correlation term, which gives reliable results for bandgaps. The plane-wave cutoff energy was set to 300 eV. Spin-orbit coupling was taken into consideration. The bulk crystal structure was relaxed until the total energy converged to 10-6 eV and the Hellmann-Feynman force on each atom was less than 0.001 eV/Å. For relaxation, the Brillouin zone was sampled using a Monkhorst-pack 21 x 21 x 21 grid [45]. The optimized lattice parameters for the pristine bulk structure in 2H phase is a= 3.52Å and c=13.97Å. In order to calculate work functions, a large vacuum spacing of 30 Å was added along stacking (out-of-plane) direction. Then we tracked the plane-averaged electrostatic potential into the vacuum, which usually the vacuum energy is reached within a few Å from the surface. Therefore, work function is obtained by subtracting mid-gap energy from the vacuum energy. Here, we used mid-gap energy instead of Fermi energy, since Fermi energy is a quantity that varies with doping and also can be anywhere in the band gap for our cases. Device Fabrication Silicon photonic platform, which includes microring resonator, was fabricated using SOI substrate with a thin 220nm Si layer with 2 µm buried oxide. The devices were patterned using electron- beam lithography using a negative resist ARN 7520. The patterned features were further etched using an Inductively Coupled Plasma (ICP) etching tool. The photoresist mask was removed using acetone wash and short oxygen plasma cleaning. The sample was cleaned using acetone and then Iso-propanol (IPA) and dried using nitrogen gas. The sample was heated on a hot plate for 2-3 mins at 180oC for better adhesion of the flakes. The few-layered MoTe2 flakes were transferred onto the microring resonators(MRRs) using 2D printer tool [30]. After the transfer process a thin 12 layer of PMMA (~300 nm) was spin coated on the sample at 1500 rpm and followed by a post baked process at 180oC for two minutes. For electrical characterization, the metal contact pads (80x 80 m2) were patterned using an EBL process. The sample was then developed in MIBK: IPA (3:1) solution. After development, A mild oxygen plasma was applied to clean the PMMA residues on the exposed 2D layer. A thin layer titanium (5 nm) and gold (45 nm) was deposited using an electron beam evaporation process followed by lift-off in acetone. Details of the step by step fabrication process flow can be found in the supplementary online information (S1, Fig. S1). Device Measurement To measure the responsivity of the device, we coupled 1,550 nm c.w. input laser and detected the photocurrent through a source meter (Keithly 2600B). Here, Pinput is the power reaching the MRR-MoTe2 detector, estimated by considering the input grating coupler coupling loss and the silicon waveguide transmission loss (Supplementary online information, Section 10, Fig.S10). The spectral response of the MRR integrated device was measured using a broadband laser (AEDFA-PA-30-B-FA) injected into the grating coupler optimized for the TM mode propagation [46]. The light output from the MRR was coupled to the output fiber and detected by the optical spectral analyzer (OSA202) [47]. The experimental setup for measuring the photodetector devices is shown in Fig. S10 (Supplementary online information). KPFM Measurement An advanced scanning probe microscopy technique, commonly known as Kelvin Probe Force Microscopy (KPFM) was exploited to gather local electrical information from the sample. For this study, a commercial AFM, MFP-3D (Asylum Research), was used and the probe used was a Budget Sensor Cr/Pt conductive coated tip (Multi75E-G). In order to calculate the work function of the tip, the tip was calibrated by scanning a freshly cleaved highly ordered pyrolytic graphite (HOPG) (φ=4.6 eV), several times and then an average was performed for all the scans. The scanning was done in the attractive (noncontact) imaging regime to avoid any possible contamination of the AFM tip. The work function of the tip was calculated to be 4.1875 eV. In all measurements, the sample was grounded to avoid the possibility of surface charge modifying the CPD value. 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1809.04526	2	1809	2018-12-04T03:34:33	Measuring monopole and dipole polarizability of acoustic meta-atoms	[ "physics.app-ph", "physics.class-ph" ]	We present a method to extract monopole and dipole polarizability from experimental measurements of two-dimensional acoustic meta-atoms. In contrast to extraction from numerical results, this enables all second-order effects and uncertainties in material properties to be accounted for. We apply the technique to 3D-printed labyrinthine meta-atoms of a variety of geometries. We show that the polarizability of structures with shorter acoustic path length agrees well with numerical results. However, those with longer path lengths suffer strong additional damping, which we attribute to the strong viscous and thermal losses in narrow channels.	physics.app-ph	physics	Measuring monopole and dipole polarizability of acoustic meta-atoms Joshua Jordaan,1 Stefan Punzet,1, 2, 3 Anton Melnikov,4, 5, 6 Alexandre Sanches,1, 7 Sebastian Oberst,5 Steffen Marburg,4 and David A. Powell6, 1, a) 1)Nonlinear Physics Centre, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia. 2)Faculty of Electrical Engineering and Information Technology, Ostbayerische Technische Hochschule Regensburg, Seybothstrasse 2, 93053 Regensburg, Germany 3)Department of Electrical and Computer Engineering, Technical University of Munich, Theresienstr. 90, 80333 Munich, Germany 4)Chair of Vibroacoustics of Vehicles and Machines, Technical University of Munich, Boltzmann Str. 15, 85748 Garching, Germany 5)Centre for Audio, Acoustics and Vibration, University of Technology Sydney, NSW 2007, Australia 6)School of Engineering and Information Technology, University of New South Wales, Canberra, ACT 2610, Australia. 7)School of Engineering, University of Sao Paulo, Av. Prof. Luciano Gualberto, 380 - Butanta, CEP 05508-010, Sao Paulo, SP, Brazil We present a method to extract monopole and dipole polarizability from experimental measurements of two-dimensional acoustic meta-atoms. In contrast to extraction from numerical results, this enables all second-order effects and uncertainties in material properties to be accounted for. We apply the technique to 3D-printed labyrinthine meta-atoms of a variety of geometries. We show that the polarizability of structures with shorter acoustic path length agrees well with numerical results. However, those with longer path lengths suffer strong additional damping, which we attribute to the strong viscous and thermal losses in narrow channels. Acoustic metasurfaces are metamaterial structures with sub-wavelength thickness that can implement a rich variety of acoustic functions1,2. A promising approach for metasurfaces is the design of structures with inter- nal labyrinthine configuration to slow down the acoustic wave's velocity to create compact resonators3,4. Struc- tures of this kind exhibit excellent wavefront shaping potential1,5 -- 7. Such meta-atoms can generate phase shifts up to 2π by adjusting their geometry7. Thereby, a wave manipulation function can be realized with a cor- responding phase gradient, which is then discretized to enable implementation with an array of meta-atoms. Drawing inspiration from electromagnetism, the domi- nant design paradigm for acoustic metasurfaces has been the generalized Snell's law5,8, where structures are de- signed for high amplitude, with spatially varying phase, both for transmission or reflection problems. However, in electromagnetism, it has been shown that the general- ized Snell's law does not correctly account for impedance matching and energy conservation. Approaches based on surface impedance must be used instead9,10 and equiv- alent electric and magnetic surface impedances need to be defined. Recently these more accurate surface- impedance models have also been applied to acoustic metasurfaces11,12. The impedances can be derived from the multipole moments of a single meta-atom13. In the acoustics of fluids, the fundamental moments are the monopole and dipole, corresponding to the net compres- sion and displacement of a fluid volume respectively. The a)Electronic mail: [email protected] acoustic response of sub-wavelength meta-atoms is well- approximated by their monopole and dipole polarizabil- ity coefficients. These coefficients relate the strength of the monopole and dipole moments to the incident pres- sure and velocity fields respectively. Developing a model based on polarizability can lead to great simplifications in modelling, particularly for complex arrangements of meta-atoms. An alternative to a continuously connected metasur- face is the use of sparse arrays of disconnected reso- nant meta-atoms1,14, which can enable highly efficient beam refraction at large angles15. These elements may find their application in creating sound control struc- tures which also allow airflow. Here, the monopole and dipole polarizabilities of the meta-atoms are the most natural model to apply. To date these polarizabilities have not been directly measured; with most designs rely- ing on simulations or indirect observations of resonances attributed to the monopolar and dipolar modes14,16. In this work we present a technique for directly ex- tracting the acoustic monopole and dipole polarizability of two-dimensional meta-atoms from experimental mea- surements. In addition, the method can be applied to numerically extracted data. Obtaining polarizability in- formation from experimental measurements is necessary for good accuracy, since numerical simulation may ne- glect viscous and thermal boundary layers, the excita- tion of vibration modes in thin structures, and it may be difficult to obtain reliable material properties for rapid prototyping materials. In this work we consider the experimental configura- tion shown in Fig. 1, similar to that used in previous works5,17. Two plates separated by a 66 mm gap form a cretization by collocation method with an adaptive inte- gration scheme21. 2 The experimental apparatus shown in Fig. 1 essentially yields the scalar pressure field throughout a plane. The parallel plate waveguide is operated in a regime where it supports only the fundamental mode with uniform pressure along the z direction. The first higher order modewith inhomogeneous pressure distribution in the z direction22 becomes propagating at 2,598 Hz, setting the upper limit of measurement. The pressure field pinc of an arbitrary incident wave propagating within a 2D system can be expanded as pinc(r, θ) = βnJn(k0r)einθ, (1) ∞(cid:88) n=−∞ where Jn is the Bessel function of the first kind, k0 = ω/c is the propagation wavenumber, ω and c are the incident wave's natural frequency and the speed of sound in air, (r, θ) are the polar coordinates relative to the center of the sample, i is the imaginary unit and βn are the ex- pansion coefficients. These expansion coefficients can be found analytically only for specific incident field profiles such as a plane wave23. In our apparatus the incident field generated by the single speaker shows significant curvature of the wave- fronts, and a spatially inhomogeneous amplitude, thus it is not well approximated by a plane wave. Further- more the source amplitude varies strongly with frequency due to the speaker response, requiring that βn are fit- ted to the measured acoustic field. For the calculation of polarizability, both the incident pressure and the ve- locity at the center of the scatterer can be directly re- trieved from the expansion coefficients as pinc(0) = β0 and vinc,y(0) = − β1+β−1 , with ρ0 being the density of air. 2cρ0 The corresponding scattered pressure field pscat can be expanded as pscat(r, θ) = ∞(cid:88) n=−∞ γnH (1) n (k0r)einθ, (2) (cid:80) where H (1) is the Hankel function of the first kind. The n expansion coefficients γn can be related to the domi- nant monopole and dipole moments as M = 4i ω2 γ0 and Dy = 4c ω3 (γ1 + γ−1). For a scatterer of arbitrary shape, the scattering process is described by a full tensor γn = m Snmβn. However, for objects with approximate cir- cular symmetry, all terms n (cid:54)= m are zero, and the rela- tionship becomes scalar: γn = Snnβn with S−n−n = Snn. For sub-wavelength meta-atoms, the monopolar and dipolar terms are expected to dominate scattering. For analytical modelling of collections of meta-atoms it is more convenient to use monopole and dipole polarizabil- ity coefficients αpp and αvv satisfying M = αpppinc(0), D = αvvvinc(0), (3) FIG. 1. (a) Side-view of the parallel plate waveguide appa- ratus, where the lid has been raised to access the sample. (b) Schematic diagram of the apparatus and sample (not to scale), showing a top-down view of components within the waveguide. parallel-plate acoustic waveguide, with uniform pressure distribution in the vertical direction, making it effectively a two-dimensional (2D) system. A loudspeaker at one end acts as the acoustic source while foam wedges form an absorbing boundary. A microphone mounted on a belt system can be scanned to any position within the x − y plane of the 2D acoustic system. A micro-controller de- velopment board with audio peripheral (Teensy 3.2 with Audio Adapter Board18) digitally generates and coher- ently detects the sinusoidal waves. Using the internally generated source as a phase reference eliminates the need for a two microphone measurement. The amplitude and phase response of the speakers, microphone and amplifier are unknown, but are eliminated in the extraction proce- dure outlined below, by explicitly measuring the incident field as a reference. Details of the construction and initial characterization of this system can be found in Refs. 19 and 20. For the corresponding numerical analysis, we use a cus- tom 2D boundary element method (BEM) code. This treats all solids as acoustic hard boundaries, ignores losses in air, and solves for the scattered pressure on the surface of the object. The code uses continuous el- ements with quadratic interpolation functions and dis- MicrophoneMicrophone belt Anechoic foam boundaryLoudspeakerSampleIncident fieldInaccessible regionAccessible scan regionsxyScattered field(b)where αvv becomes a scalar for the rotationally symmet- ric structures considered here. However, by normalizing these polarizabilities, we find that they are trivially re- lated to the scattering coefficients: 3 αpp = S00 α(cid:48) pp = α(cid:48) vv = ω2 4i −ω3 8c2ρ0 αvv = S11 = S−1−1 (4) (5) We use this normalization since it gives a simple physical interpretation of the strength of different types of polar- izability in terms of contribution to scattering, with a maximum magnitude of unity. To experimentally measure the acoustic polarizability, we need to determine the incident field coefficients βn and the scattered field coefficients γn for n ∈ {0, 1,−1}. The incident field is measured on a circle of radius Rinc. Applying the orthogonality of exponential functions to Eq. (1), we find the incident field coefficients as: pinc(Rinc, θ)e−inθdθ. (cid:90) π βn = (6) 1 2πJn(k0Rinc) −π Note that the Bessel functions have zeros which make Eq. (6) singular, the first of which occurs at k0Rinc ≈ 2.4. Thus Rinc is chosen sufficiently small to remain well below this singular condition at the highest frequency of interest. For determination of the scattered field coefficients, we measure both the total field ptot and incident field pinc at the same radius Rscat, with the scattered field given by their difference pscat = ptot − pinc. Integrating Eq. (2) and applying orthogonality conditions, the scattered field coefficients are given by γn = 1 2πH (1) n (k0Rscat) −π pscat(Rscat, θ)e−inθdθ. (7) As the Hankel function has no real zeros, there is more freedom to choose Rscat. Referring to Fig. 1(b), we see that when the sample is placed within the waveguide, there is an inaccessible region of width w where the field cannot be measured, as the belt on which the microphone is mounted would collide with the sample. Therefore we must measure over a reduced angular range, and approx- imate the angular integral as (cid:90) π (cid:90) 2π 1 2π 0 (cid:32)(cid:90) π−θin (cid:90) 2π−θin ··· dθ ≈ 1 2π−4θin ··· dθ + ··· dθ θin π+θin 2Rscat (8) where θin = arcsin w is the angular half-width of the inaccessible region. Since the range of inaccessible angles reduces with increasing Rscat, larger values are preferred for increased accuracy. This reduced angular range of in- tegration means that we do not have exact orthogonality between different orders n. However, for sub-wavelength meta-atoms with dominant monopolar and dipolar radi- ation the scattered field will have relatively smooth an- gular variation, and we do not expect significant interfer- ence from higher order terms with n > 1. FIG. 2. Top row: Cross-section of each meta-atom design. Meta-atom I was taken from Ref. 14, IV from Ref. 24. The diagram of meta-atom IV defines the parameters wall thick- ness t, channel width w and meta-atom radius R. For I: R = 50 mm, w = 4 mm and t = 1 mm. II: R = 25 mm, w = 2 mm, t = 0.5 mm. III: R = 25 mm, w = 4 mm, t = 1 mm. IV: R = 40 mm, w = 6 mm, t = 2 mm. Bot- tom row: Photographs of the 3D printed meta-atoms, made from PLA with 0.1 mm layer thickness to a height of 66 mm. The ratio of the scattered field coefficients γn to the incident field coefficients βn gives the corresponding scat- tering coefficient Snn according to Eqs. (4) and (5). Since we have two equivalent expressions for the dipole polariz- ability α(cid:48) vv, their average is taken to reduce the influence of measurement uncertainties. The developed extraction procedure is applied to in- dividual 2D acoustic meta-atoms based on labyrinthine designs with eight-fold rotational symmetry. Four meta- atoms were fabricated and characterized, two of them having geometries previously reported in Refs. 14 and 24. Diagrams of the designs are shown in Fig. 2, with photographs of the fabricated meta-atoms shown below. All of the designs were fabricated by 3D printing using PLA filament with a 0.1 mm layer thickness, to a height of 66 mm. The top of each meta-atom was left open to simplify fabrication, and to allow verification of the fabri- cation quality. Initial experiments with this configuration showed poor agreement with the numerical results, due to imperfect contact between the meta-atom and the top waveguide plate. We attributed these poor initial results to sound leakage from a small gap between the meta-atom and top plate, and the excitation of vibrational modes in the meta-atoms. To suppress these effects we inserted a thin rubber sheet between the meta-atom and top plate, which greatly improved agreement, as detailed below. The experimentally measured (dashed curves) and nu- merically calculated (solid curves) polarizabilities are shown in Fig. 3. Note that we consider only frequencies above 500 Hz, since data at lower frequencies are inaccu- rate due to the poor performance of the absorbing bound- aries at long wavelengths, as well as high background noise levels in that frequency range. Overall the agree- ment is reasonable, but the experimental results contain small spurious peaks and ripples, and in certain cases resonant features predicted in the numerical results are (cid:33) , IIIRtwIIIIV4 to characterize this resonance, we designed meta-atom II, where all geometric parameters are downscaled by 1/2. The numerically predicted fundamental dipole and monopole resonances are now moved to double the fre- quency, and the fundamental monopole resonance is within the measurable range. Comparing the experimental results of meta-atoms I and II to their numerical results, indicates the presence of resonant peaks, which are suppressed to the level of the experimental uncertainties. This is most likely due to the viscous and thermal boundary layers, which are not included in our boundary element model. These lay- ers have been shown to dominate the acoustic response in channels25, lowering the quality factor of resonances. To reduce the influence of losses, we created meta-atom III. This had the same channel thickness w and wall thick- ness t as meta-atom I, but with the external radius being scaled by 1/2. Due to the greatly reduced acoustic path- length, the fundamental monopolar resonance is thereby increased to approximately 1,900 Hz, and the dipolar res- onance is outside the measurable frequency range. For this structure, it can be seen that the numerical results agree much better with the experiments. To further investigate the applicability of our extrac- tion method, we also fabricated meta-atom IV, which was originally presented in Ref. 24 with a predicted fun- damental monopole resonance at 1,360 Hz. Meta-atom IV has thicker walls and wider channels than the other meta-atoms; thus it is expected that this structure is less susceptible to boundary layer effects. It can be seen that the experimental and numerical results are in good agree- ment for this structure. The resonant frequency is lower than predicted in Ref. 24, being approximately 1,200 Hz in both numerics and experiment. The good agreement between numerical and experimental results for this sam- ple further validates our approach. To confirm that the viscous and thermal boundary lay- ers are responsible for suppressing the scattering peaks of meta-atoms I and II, we apply the theory of Stinson26 to calculate the complex wavenumber keff within the narrow channels. We consider one of the channels in each meta- atom, and approximate it as a straight rectangular pipe with length leff given by the acoustic path length from the center cavity to the exterior. The damping within the pipe yields its dissipative quality factor as22 Qdiss = Re{keff} 2Im{keff} . (9) We also take into account the leakage of energy through the external aperture by each channel. This can be cal- culated from the radiation resistance of an unflanged pipe22, to yield the radiative quality factor Qrad = 4πleff SRe{keff} , (10) where S is the cross-sectional area of the aperture. These quality factors were calculated for the lowest or- FIG. 3. Experimentally measured (dashed lines) and numeri- cally calculated (solid lines) normalized monopole and dipole polarizability. heavily suppressed. A possible explanation for the rip- ples are multiple reflections between the meta-atom and the speaker. These multiple reflections result in an effec- tive incident field that differs from that field, measured in the absence of the meta-atom. On the other hand, the suppression of certain resonances is a genuine physical effect, as discussed below. Consider first the numerical results for meta-atom I, corresponding to the geometry reported in Ref. 14. In that work, the authors performed a semi-analytical derivation of the multipole expansion coefficients of the field scattered by a plane-wave (comparable to Snn). They predicted a fundamental monopole resonance at 518 Hz and a dipole resonance at 1,080 Hz, as well as a second monopole resonance at 1,549 Hz. We see that our numerical results are fairly consistent with these semi- analytical predictions, however the numerically deter- mined resonant frequencies are somewhat lower. This has the effect of pushing the fundamental monopole res- onance below our measurement range. To enable us I43454054,7,-90pp54054,7,-90vv II III#03:223:2#005205 1 IV 1TABLE I. Estimated dissipative and radiative quality factors of the lowest frequency monople resonances shown in Fig. 3. Structure Qdiss Qrad I 36 146 II 12 142 III 43 37 IV 43 39 (cid:0)Q−1 (cid:1)−1 der monopole mode of each meta-atom within our exper- imental frequency range, and are listed in Table I. rad The dissipative and radiative quality factors can be combined to find the total quality factor Qtot = diss + Q−1 , which determines the total rate of en- ergy loss from the cavity. However, to interpret the scat- tering response, we need to consider the individual con- tribution from each of these terms. By reciprocity, the radiative quality factor Qrad also determines how long it takes an incident wave to couple into the structure. Qdiss determines the time scale over which energy is dissipated internally. If Qdiss (cid:28) Qrad, then internal dissipation will dominate over radiation of energy, and resonant scatter- ing will be suppressed. As can be seen in Table I, for meta-atoms I and II, internal dissipation dominates over radiation, which explains the strong suppression of the resonant scattering peaks. In contrast, for meta-atoms III and IV, radiative and dissipative losses are compara- ble, thus the experimentally observed scattering is only moderately suppressed compared to the simulated values. In conclusion, we presented a method for extracting the monopole and dipole polarizability from experimental measurements of two-dimensional acoustic meta-atoms. We applied this method to labyrinthine meta-atoms pre- viously reported in the literature. For structures with thin walls and long acoustic path length, the resonances predicted numerically were highly damped, and were es- sentially unobservable in the experiment. We attribute this to the viscous and thermal boundary layers, which have thickness comparable to the width of the narrow channels. 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1806.06669	1	1806	2018-05-30T22:14:23	Chemical Characterization of Aerosol Particles Using On-chip Photonic Cavity Enhanced Spectroscopy	[ "physics.app-ph", "physics.bio-ph", "physics.chem-ph" ]	We demonstrate the chemical characterization of aerosol particles with on-chip spectroscopy using a photonic cavity enhanced silicon nitride (Si3N4) racetrack resonator-based sensor. The sensor operates over a broad and continuous wavelength range, showing cavity enhanced sensitivity at specific resonant wavelengths. Analysis of the relative change in the quality factor of the cavity resonances successfully yields the absorption spectrum of the aerosol particles deposited on the resonators. Detection of N-methyl aniline-based aerosol detection in the Near InfraRed (NIR) range of 1500 nm to 1600 nm is demonstrated. Our aerosol sensor spectral data compares favorably with that from a commercial spectrometer, indicating good accuracy. The small size of the device is advantageous in remote, environmental, medical and body-wearable sensing applications.	physics.app-ph	physics	Chemical Characterization of Aerosol Particles Using On-chip Photonic Cavity Enhanced Spectroscopy Robin Singh, Brian W. Anthony Department of Mechanical Engineering Institute for Medical Engineering and Science MIT.nano Massachusetts Institute of Technology Massachusetts Ave, Cambridge MA 02139, USA Danhao Ma, Lionel Kimerling, Anu Agarwal Department of Materials Science & Engineering Microphotonics Center Materials Research Laboratory Massachusetts Institute of Technology Massachusetts Ave, Cambridge MA 02139, USA June 19, 2018 Abstract We demonstrate the chemical characterization of aerosol particles with on-chip spec- troscopy using a photonic cavity enhanced silicon nitride (Si3N4) racetrack resonator- based sensor. The sensor operates over a broad and continuous wavelength range, showing cavity enhanced sensitivity at specific resonant wavelengths. Analysis of the relative change in the quality factor of the cavity resonances successfully yields the absorption spectrum of the aerosol particles deposited on the resonators. Detection of N-methyl aniline based aerosol detection in the Near InfraRed (NIR) range of 1500 nm to 1600 nm is demonstrated. Our aerosol sensor spectral data compares favorably with that from a commercial spectrometer, indicating good accuracy. The small size of the device is advantageous in remote, environmental, medical and body-wearable sensing applications. 1 Introduction Aerosols consist of solid or liquid particles suspended in a gas medium. They play a significant role in the physio-chemistry of the environment, climate forcing, air quality, and the transport mechanism of accidental or industrial release of biological and chemical weapons [14] [3] [7] They play an essential role in pharmaceutical research, particularly for pulmonary drug de- livery applications. For instance, many pulmonary applications use nebulizers that generate 1 aerosols to deliver drugs within lung airways [19]. This requires tight control on aerosol properties such as particle size and count to control the fate of aerosol deposition location in the respiratory tract. Similarly, many transdermal applications use nanoparticle-based aerosols for drug delivery [19]. Many applications will benefit from a miniaturize and low cost techniques to characterize the microphysical properties of an aerosol. Both physical and chemical characterization of aerosols are beneficial. Physical refers to estimating the particle size and count in the test medium, and the latter relates to the chemistry of the particles. For decades, the physical characterization of aerosol particles has been performed using free space optical and electrical methods that involve evaluation of light scattering and electrical mobility properties of the medium [9] [13]. For chemical characterization, commonly used methods are based on Fourier Transform InfraRed (FTIR) spectroscopy [10], Raman spectroscopy [1], and fluorescent imaging [8]. These techniques for chemical characterization is that they are either too bulky for field testing [15] or have poor sensitivity when miniaturized to a hand-held form factor [22]. There is a need for a miniaturized technique to chemically characterize the aerosol par- ticles without compromising the sensitivity of the device, while also offering the advantages of low-cost and real-time monitoring [2, 6, 20]. Commercial portable sensors today can mea- sure physical properties of aerosols, such as their particle size distribution and count [5], and portable mid-IR spectrometers based on micro electro mechanical systems (MEMS) technologies can chemically characterize them, but would benefit from improved detection limits [11, 12] [4]. The present work develops an ultra-sensitive on-chip photonic spectroscopy platform to obtain chemical attributes of the aerosol particles. The proposed method uses a Si3N4 based micro ring resonator cavity as the sensor, to enhance light-particle interaction for improved detection limit [16, 18, 21, 23]. The wavelength range chosen in the study is dependent on the chemical composition of the aerosol particle to be detected, because every chemical ab- sorbs identifiably distinct bands of the infrared spectrum, called its chemical fingerprint. The current study chooses the near IR regime to detect N-methyl aniline aerosols. Such an approach can be used to develop a highly sensitive on-chip photonic aerosol spectrometer [21]. 2 Photonic Device Design and Fabrication 2.1 Photonic Device Design Our approach for cavity enhanced on-chip spectroscopy of aerosol particles is based on a micro racetrack resonator with waveguides designed as racetrack loops, as shown in Fig. 1. We couple in the light from the tunable light source to a bus waveguide through edge coupling [23]. Light in the bus waveguide interacts with the photonic cavity through the gap between bus waveguide and cavity loop. When the optical path length of the cavity waveg- uide is an integral multiple of the input light wavelength, the light circulates within the loop 2 Figure 1: (a) Depiction of conventional instrumentation set up for cavity enhanced aerosol spectroscopy. The method uses a tunable light source, collimator, a cavity to allow particle- light interaction, lens, and detector. The cavity increases the optical path of the light from the source to the detector. The cavity comprises two reflecting surfaces that allow light to bounce back and forth while interacting with the aerosol particles dispersed in the cavity (b) Depiction of on-chip photonic cavity for aerosol spectroscopy. The cavity consists of optical waveguides forming a resonator coupled with the linear (bus) waveguide. As the light couples into the bus waveguide from the tunable source, it circulates in the resonator loop multiple times. The circulation in the resonators depends on the quality factor of the cavity and enhances light- aerosol interaction. The transmittance spectrum of the cavity is obtained from the output of the detector multiple times and enhances the light particle interaction during spectroscopy. The coupling efficiency is determined by the gap 𝑔 between the bus waveguide and resonator waveguide and the coupling length 𝐿𝑐 [17] [20]. The annotated schematic of the racetrack resonator is shown in Fig. 5c. Compared to a micro ring structure, a racetrack structure enhances the coupling efficiency due to its larger coupling length. Since free spectral range (FSR) depends inversely on the coupling length of the resonant cavity, a racetrack structure decreases the FSR [17] [20]. Smaller FSR of the design results in greater number of input light wavelengths resonating within the cavity over a given wavelength swept range, improving the spectral resolution of the sensor. The resonant cavity is designed to support wavelengths between 1500 nm to 1600 nm (NIR). To design, optimize and evaluate the photonic cavity, we simulate the microstructures 3 using Lumerical MODE simulation software [Lumerical Incorporated, Canada]. Fig. 3 shows mode simulations and effective refractive index analysis that is used to optimize the width of the waveguide within the cavity for supporting a single mode. The simulation model consists of the silicon substrate with a buried oxide (BOX) which is a 3 𝜇m thick silicon dioxide layer. On top of the BOX layer are the silicon nitride (Si3N4) based waveguide structures of the sensor. Given a single-mode Si3N4 thickness of 400 nm, we calculate the waveguide width that continues to support this single mode. Effective refractive index analysis is done for different widths of the waveguides (Fig. 3e). Based on simulations, the optimized cross section of a single mode waveguide is 400 nm in thickness and 800 nm in width for 1.5 to 1.6 𝜇m wavelength. The first two (TE and TM) modes supported by the cavity waveguide are presented in Figs. 3c and 3d. The aerosol particles interact with the evanescent wave tail in the vicinity of the cavity waveguide. 2.2 Fabrication We fabricate the device with the process flow as shown in Fig. 2. A low pressure chemical vapor deposition (LPCVD) system is used to deposit 400 nm thick silicon nitride (Si3N4) layer on 6-inch silicon dioxide wafer (3-micron oxide on Si substrate). These thermal oxide wafers are procured from Wafer Pro LLC, CA. Micro-racetrack resonators and waveguides are designed and patterned on silicon nitride-on-insulator substrate via photolithography and followed by reactive ion etching to define the geometry of the on-chip sensing components. Fluorine chemistry with a gas mixture of CHF3 and CF4 is used in the dry etching step. Fig. 3 shows the SEM image of the fabricated resonators with its dimensions. Figure 2: Schematic showing the process flow to fabricate the Si3N4 based micro race track resonators used in the study. We deposit 400 nm thick Si3N4 on SiO2+Si wafer. We use photolithography to pattern the waveguide structures, followed by pattern transfer using reactive ion etching process. Once the device is patterned, we remove the photoresist by cleaning the wafer with plasma treatment. Fig. 4 shows the schematic of the setup to detect aerosol particles. N-methyl aniline based aerosols are generated with a TSI 3076 atomizer [TSI Incorporated, Shoreview, USA] 4 which uses a compressed air-based atomization technique to produce liquid aerosol particles, which are then passed through a TSI diffusion dryer [TSI Incorporated, Shoreview, USA] to dry the aerosol mixture. We use a handheld pump to maintain a constant flow rate of aerosol particles within the sensor channel. In addition, a differential mobility analyzer (TSI-3080) can be connected to the diffusion dryer to select a specific particle size at the output. Figure 3: Design and characterization of the sensor. (a) SEM image of the on-chip photonic cavity in the aerosol sensor. (b) Expanded SEM view of the race track resonator showing critical coupling dimensions of racetrack and bus waveguides in the aerosol sensor. (c, d) MODE analysis of the resonator waveguide, with c and d showing the TE and TM modes respectively. (e) Waveguide width design to obtain a single mode resonator, by performing a waveguide width sweep given a constant thickness of 400 nm. Our photonic sensor is edge coupled to the tunable laser and detector from Luna tech- nologies [PHOENIX 1200, Luna Innovations Incorporated, VA, USA]. The laser has tuning capability from 1520 nm to 1600 nm wavelength. Fig. 5a shows the sensor coupled with the system. Fig. 5d to 5g show the microscopic images of the sensors with and without the aerosols. The cavity highlighted with the red arrow in Fig. 5f to 5h is used as the sensor module. The absorption spectrum is determined from the transmittance spectrum measured by the resonant cavity. We present a theoretical model for the racetrack cavity resonance. Fig. 5c depicts different parameters of the racetrack cavity used in the mathematical model. The 5 It comprises of Figure 4: Schematic of the setup used in on-chip aerosol spectroscopy. three different subsystems: (a) aerosol delivery and transport system (b) on-chip photonic sensing system (c) output pattern and spectrum acquisition system. Aerosols from the test environment (here, a constant output atomizer) are channeled into the aerosol transport system comprising a constant pressure pump, which regulates flow rate in the delivery tube. Figure 5: Photonic Aerosol Sensor. (a) light is edge-coupled in and out of the sensor de- vice. (b) A picture of the fabricated aerosol sensor (c) Schematic of the racetrack resonator. Microscopic views of the aerosol sensor (d, e) without aerosols and (f, g) with aerosols.l 6 round-trip length, 𝐿𝑡𝑜𝑡𝑎𝑙 , in the racetrack cavity, is given as derived in [20], 𝐿𝑡𝑜𝑡𝑎𝑙 = 2𝐿𝑐 + 2𝜋𝑟 (1) Where 𝑟 and 𝐿𝑐 are the bend radius and the coupling length respectively. When the laser input is tuned over the given spectral range of interest, transmittance response of the all-pass racetrack resonant cavity is given by [20], 𝐸𝑡ℎ𝑟𝑢 𝐸𝑖𝑛 𝐴 + 𝑡𝑒−𝑖𝜑 𝐴𝑡* + 𝑒−𝑖𝜑 = −√ −√ (︂ 𝜋𝐿𝑡𝑜𝑡𝑎𝑙 2𝐿𝑐 )︂ where t is the straight-through coupling coefficient of the optical field, and t* is the complex conjugate of t. Here, t is mathematically defined as 𝑡 = cos 𝑒𝑖𝛽𝐿𝑡𝑜𝑡𝑎𝑙 (3) Where 𝐿𝑐 is the coupling length of the racetrack resonator, 𝜑 and A are the round-trip phase and the power attenuation, respectively. 𝜑 is defined as 𝜑 = 𝛽𝐿𝑡𝑜𝑡𝑎𝑙, 𝛽 being propaga- tion constant and A is the power attenuation given by 𝑒−𝛼𝑡𝑜𝑡𝑎𝑙𝐿𝑡𝑜𝑡𝑎𝑙. The power attenuation during the propagation is given by 𝛼𝑡𝑜𝑡𝑎𝑙 = 𝛼𝑎𝑒𝑟𝑜𝑠𝑜𝑙 + Γ𝛼𝑤𝑔 where, 𝛼𝑎𝑒𝑟𝑜𝑠𝑜𝑙 and 𝛼𝑤𝑔 are ab- sorption coefficients of the aerosol and of the Si3N4 waveguides and Γ is the confinement factor of the waveguide that determines the fraction of the guided tail (evanescent waves) that is available outside the waveguides to interact with the aerosol particles. One of the useful parameters that relates the absorption coefficient of the waveguides with the nature of the resonant peak is the quality factor, Q, of the resonant peak. Q is defined as [20] (2) (4) 𝑄 = 2𝜋𝑛𝑟 𝛼𝑡𝑜𝑡𝑎𝑙𝜆𝑚 From the above equation, it can be concluded that 𝑄 ∝ 1 . Given that 𝛼𝑇 = 𝛼𝑎𝑒𝑟𝑜𝑠𝑜𝑙 + Γ𝛼𝑤𝑔, Γ𝛼𝑤𝑔 remains constant for the sensor design, 𝑄 ∝ 1 . Hence, analyzing the quality factor of the resonance peaks can be used to retrieve the relative absorption of the aerosol particles at the resonant wavelengths. Here, we calculate the relative change in the quality factor (Q1-Q2)/Q2 for all resonant peaks, where Q1 and Q2 are the quality factor before and after aerosol exposure respectively. 𝛼𝑎𝑒𝑟𝑜𝑠𝑜𝑙 𝛼𝑡𝑜𝑡𝑎𝑙 3 Results and Discussions Fig. 6e shows the transmission spectrum of the resonant cavity with an exposure time of 20, 40, 80 and 120 seconds to the N-methyl aniline based aerosols. Once the aerosol distri- bution on the sensor reaches a steady state in the flow rate, we measure the transmission spectrum of the cavity over the wavelength range of 1520 nm-1600 nm. The micrographs at four different exposure times are shown in Fig. 6a-d. Fig. 6e shows that the resonant peak of the cavity experiences a red shift on exposure to the aerosol medium. Besides, when the individual resonant peak is analyzed, we found that the sharpness of the peaks (related to the quality factor, Q), also changes. To analyze the peaks quantitatively, we calculate the 7 Q of the resonant peaks after curve fitting them with an appropriate Lorentz function. The Fig. 6f, 6g, 6h shows the Lorentz fitting on the resonant peaks with 0, 20 and 120 second exposure to the aerosols. We calculate the quality factor of individual resonant peaks obtained from the transmis- sion spectrum of the resonant cavity at two different wavelengths, one absorbing wavelength (i.e. 1531 nm) where N-methyl aniline absorbs significantly and another non-absorbing wavelength (i.e. 1576 nm) where N-methyl aniline absorption is insignificant. Fig. 6i-j com- pares the change in quality factor at these wavelengths. A significant reduction in the quality factor at the absorbing wavelength (near 1530 nm) is observed. On the other hand, there is no change for the case of non-absorbing wavelength (near 1576 nm). The relative change in the quality factor provides us the spectral absorption spectrum of the aerosol medium. The intrinsic loss from the waveguides and noise from other ambient particles in the surrounding medium is characterized. This characterization is used to normalize the quality factor change obtained with the aerosols. Once we obtain the absorption spectrum from the sensor readings, we compare it with that obtained from a commercial spectrometer [15]. The commercial spectrometer data is adapted from the experiments performed in the [15]. N-methyl aniline has an overtone ab- sorption peak between 1460 nm to 1530 nm. Fig. 7 shows the super-imposed spectra from the sensor and commercial spectrometer. A comparison reveals that the spectrum obtained from our sensor matches closely with that of the commercial spectrometer. The error bars on the obtained values were about 10% of the measured readings. We believe that the spectral resolution of the spectrum can be further improved by using an array of the resonant cavities supporting different wavelengths and providing a number of spectral data points. 4 Conclusion The presented work demonstrates the ability to chemically characterize aerosol particles us- ing on-chip photonic cavity enhanced spectroscopy. The cavity is based on the Si3N4 based micro-racetrack resonators. The racetrack cavity improves light coupling efficiency and of- fers smaller FSR to increase the spectral resolution of the measurements. The photonic cavity increases the effective path length by the order of quality factor of the resonant cav- ity, making the sensor highly sensitive in sensing and characterizing the aerosol particles. The sensor performs a continuous wavelength sweep detection of the aerosol, from which the absorption spectrum is calculated based on the relative change in quality factor over the selected wavelength range. We illustrate the absorption spectrum retrieval of the N-methyl aniline based aerosols using the method. The results obtained from the proposed method shows a good agreement to the data collected from a commercial spectrometer. We present a sensing modality that is particularly advantageous as a lightweight and smaller footprint device for the accurate characterization of aerosols in remote, on-site, and body wearable sensing applications. Our method overcomes the existing challenge of pre-calibration and pre-knowledge about the aerosol medium in obtaining an absorption spectrum. 8 Figure 6: The microscopic images of the aerosol photonic sensor at different exposure times to the N-methyl aniline aerosol medium (20 sec, 40 sec, 80 sec and 120 seconds). (e) Insertion loss measured with the sensors over the range of the 1530 nm to 1600 nm. (f ) Lorentz curve fit plot of the resonant peak with no aerosol exposure (g, h) Lorentz curve fit plot of the resonant peak with aerosol exposure for 20 seconds and 120 seconds respectively (i) Comparison of the quality factor of the resonance peak at the absorbing wavelength. After exposure to the aerosol, the quality factor of the resonance decreases due to light absorption by the interacting particles. (j) Comparison of the quality factor of the resonant peak at a non-absorbing wavelength. The quality factor remains almost the same. While the current resonator design and experiments focus on the Near IR range, it is possible to extend the method to mid-IR which is particularly useful to perform chemical spectroscopy. In such cases other mid-IR transparent materials like chalcogenide glasses, etc. can be used to fabricate the device. The system can be miniaturized by using tunable portable on-chip light source and detector. 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1812.04908	1	1812	2018-12-12T11:46:26	Halide perovskites: Is it all about the interfaces?	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	Design and modification of the interfaces, always a critical issue for semiconductor devices, has become the primary tool to harness the full potential of halide perovskite (HaP)-based ones. In particular the outstanding improvements in HaP solar cell performance and stability can be primarily ascribed to a careful choice of the interfacial layout in the layer stack. In this review we describe the unique challenges and opportunities of these approaches (section A). For this purpose, we first elucidate the basic physical and chemical properties of the exposed HaP thin film and crystal surface (section B). We then lay out the energetic alignment processes to adjacent transport and buffer layers (section C) and finally elaborate on the impact of the interface formation on how well/poor a device functions. Based on those sections we then present a road map for the next steps in interfacial design principles for HaP semiconductors (section D).	physics.app-ph	physics	TITLE: Halide perovskites: Is it all about the interfaces? AUTHORS: Philip Schulz1,2 , David Cahen3, Antoine Kahn4 AFFILIATIONS: 1Institut Photovoltaïque d'Île-de-France (IPVF); 2National Center for Photovoltaics, National Renewable Energy Laboratory; 3Department of Materials and Interfaces, Weizmann Institute of Science; 4Department of Electrical Engineering, Princeton University; ABSTRACT: Design and modification of the interfaces, always a critical issue for semiconductor devices, has become the primary tool to harness the full potential of halide perovskite (HaP)-based ones. In particular the outstanding improvements in HaP solar cell performance and stability can be primarily ascribed to a careful choice of the interfacial layout in the layer stack. In this review we describe the unique challenges and opportunities of these approaches (section A). For this purpose, we first elucidate the basic physical and chemical properties of the exposed HaP thin film and crystal surface (section B). We then lay out the energetic alignment processes to adjacent transport and buffer layers (section C) and finally elaborate on the impact of the interface formation on how well/poor a device functions. Based on those sections we then present a road map for the next steps in interfacial design principles for HaP semiconductors (section D). 1 TABLE OF CONTENTS: A. Introduction: Unique surfaces and interfaces leading to technological challenges and opportunities A.1. Emergence of halide perovskite (HaP) semiconductor-based optoelectronics A.2. Rich chemistry and physics at the interface A.3. Relevant interface energetics A.4. Applications: The key role of interfaces in devices A.4.1 Electronic transport across interfaces in optoelectronic devices at the example of thin-film PV A.4.2 Charge transfer vs recombination current in HaP solar cells B. HaP thin-films and single crystals: The exposed surface B.1. Surface termination and likely chemistry B.1.1. Surface termination in non-stoichiometric thin-films B.1.2. "Extrinsic" species aggregation B.1.3. Typical surface defects, compensation and passivation B.2. Electronic structure and energetics of the HaP thin-film surface B.2.1. Band edge determination B.2.2. Compositional effects on Ionization energy B.2.3. Defect tolerance and the effects of radiation damage B.3. HaP single crystals B.3.1. Band dispersion by angle resolved photoemission spectroscopy in MAPbI3 B.3.2. MAPbBr3 and mixed HaP single crystals C. Interfaces to adjacent functional layers C.1. Substrate typology and interactions with HaP thin-films 2 C.1.1. Chemistry-dominated growth modes C.1.2. Substrate dependent HaP doping characteristics C.1.3. Buried interface analysis via Hard X-ray photoemission spectroscopy C.1.4. Examples for oxide substrate modifications and passivation C.2. Semiconducting charge transport layers on top of HaP films C.2.1. Energy level alignment to organic semiconductor films C.2.2. Inorganic semiconductor overlayers: Energy level alignment, reactivity, and band bending C.2.3. Conductive carbon transport layer C.3. The metal/HaP interface C.3.1. Chemical reactions between metal film and HaP C.3.2. Metal ion migration and diffusion barriers C.4. Passivation strategies at the HaP top interface C.4.1. Self-assembled monolayer deposition on top of HaP C.4.2. Inert oxide lamination D. Conclusion and Outlook D.1 Interface as a critical control parameter for HaP film properties D.2 Interfacial Design meets HaP technology: Future research roadmap 3 MANUSCRIPT: A. Introduction: Unique surfaces and interfaces leading to technological challenges and opportunities This review brings into focus the complex interfaces that lie at the core of halide perovskite (HaP)-based devices, which have been identified to play a crucial role for device functionality and even more so in terms of device performance limits and device stability. The intricacy of these interfaces arises from the composition of the HaP bulk material itself, which often include five to six different elemental and molecular components. As will be explained in the later part of this subsection, many HaP compounds employed in the current technological iterations are comprised of organic and inorganic building blocks; these materials hence exhibit true hybrid character, which leads to a variety of possible surface terminations and interface formation processes and related physico-chemical mechanisms. In section A, we lay out the fundamental definitions of the chosen material system, including challenges and applications (A.1), our approach to measure, assess, and quantify the interface phenomena (A.2, A.3), and the role of interfaces in devices (A.4). Section B centers on the exposed surface of HaP thin-films and single crystals. We first introduce the chemical landscape of the HaP surface (B.1) and subsequently describe the surface's electronic properties (B.2). The section concludes with the description of single crystals as an experimental platform, which enables the most fundamental measurements of the HaP electronic structure (B.3). In the device, the HaP surface transforms into an interface with the adjacent functional layer. The main objective of this review lies in section C in which we describe the chemical, physical and electronic aspects of interfaces in HaP-based devices. After a brief classification of relevant types of substrate-HaP film interfaces encountered in the device, we turn to a detailed description of the impact of the substrate-HaP interaction on the HaP film (C.1). Subsequently, we introduce the interface between the HaP layer and a semiconducting charge transport layer deposited on top (C.2), as well as the direct HaP/metal contact interface (C.3). Section C closes with the analysis of interfaces between HaP films 4 and passivation layers (C.4). In our discussion on interfaces we also touch on the effect of likely ion migration into/from the interfaces, on charge transfer as well as device functionality. We summarize the review in section D and sketch the road towards guidelines in interface engineering for optoelectronics that employ functional HaP layers. Eventhough there is a growing awareness that the interface in the HaP- based device is a major weak spot in terms of device performance and stability, we find that our fundamental understanding of the interface science of HaPs is limited, especially due to the large variety of potential chemical reactions at the interface. Dedicated interface studies remain scarce and often it is unclear to what extent the results can be used for the description of an operating cell. Hence, we conclude that before we can discuss targeted strategies to mitigate these interface-dictated problems in devices, we need to be able to better assess the interfaces to these semiconductor compounds, that are chemically complex and often metastable, and we suggest ways to achieve this (D.2). A.1. Emergence of halide perovskite (HaP) semiconductor-based optoelectronics Following their (re-)emergence as light absorber in a novel class of thin-film photovoltaic devices, HaP semiconductors have also found use in a wide range of other optoelectronic applications.1 -- 8 From high efficiency solar cells to bright light emitting diodes to radiation sensors, HaP thin films offer a unique set of tunable optical and electronic properties combined with facile processing routines.9 -- 11 We begin with a clear definition of the class of HaPs that recently attracted the most interest and is the focus of this review. HaPs have the perovskite crystal structure or closely related ones and the corresponding ABX3 stoichiometry (see Figure 1a). For HaPs the A-site is occupied by a monovalent cation, the B-site by a divalent cation and a monovalent halide anion on the X-site. The two times smaller formal charge on the X site than for the established oxide perovskites plays a large role in the properties of these materials, due to the much smaller Coulomb interactions, the decreased ionic character of the bonds and 5 the concomitant changes in the electronic structure. The choice of ions and their respective ionic radii critically determine the dimensionality of the resultant HaP system, which can range from isolated octahedra in 0D to corner-shared perovskite lattices in true 3D perovskites.12 Most of the technological surge of HaPs has been with the 3D variants. For these, the possible combinations of A and B site cations is governed by the so-called Goldschmidt tolerance factor,13 which essentially is derived from a close- packing of spherical hard ions. The variety of ions that can occupy the X, A and B sites in perovskites, and also in those where X=halide, enables tunability of the optoelectronic properties of the material while at the same time defines a complex material system.14 The focus of the research community and device makers has been on HaP materials with lead, and to a lesser extent tin, on the B-site. In the most common HaP compounds with Figure 1 -- (a) ABX3 crystal structure and most commonly employed elemental and molecular components of HaPs. (b) Schematic representation of layer stack as realized in a prototypical HaP-based solar cell with organic hole transport layer (HTL) and oxide electron transport layer (ETL). (c) Schematic energy level diagram for the device pictured in b. Characteristic energies, such as the ionization energy (IE) and electron affinity (EA), as well as the relative positions of the band edges (ECBM, EVBM) of the HaP absorber of a given band gap (BG) with respect to the energy levels of the adjacent transport levels determine charge carrier extraction at the interfaces. ∆EVB indicates the band offset between the valence band maxima of two adjacent layers (here, the HaP and HOMO level in the hole transporter), and ∆EVAC is the difference between the vacuum level positions of the HaP and HTL. Reproduced from Ref. 145 with permission from The Royal Society of Chemistry. 6 this lead halide basis, which are employed in the current generation of semiconductor devices, the A-site is typically occupied by either Cs+ or by a small organic molecule. Two organic molecules, methylammonium (MA, CH3NH2 +) and formamidinium (FA, CH(NH2)2 +), satisfy the Goldschmidt tolerance factor for most lead and tin halides; hence the corresponding HaPs crystallize in a 3D perovskite structure.15 This compositional complexity in the bulk leads to an equally convoluted chemical composition for the HaP surfaces and, thus, the respective interfaces to adjacent layers,16 with potentially drastic consequences for the system. First, a HaP organic/inorganic hybrid system could have the remarkable character of exhibiting surface termination of either the organic molecular moiety or the metal halide unit, with direct implications for surface potential, electronic structure and chemical reactivity. This scenario becomes even more prevalent when the simple molecular component, MA or FA, is replaced by a larger molecular ion such as butylammonium (BA, C4H9NH2 +) or other long-chain alkylamines (CnH(2n+1)NH2 +) as in the case of layered 2D perovskites or mixed 2D/3D Ruddlesden-Popper phases.17,18 There, the long-chain molecule acts as a spacer unit between the repeating 2D perovskite sheets and likely provides passivating surface termination. This scenario has been reported to be beneficial for both solar cell and LED applications.19,20 Second, the currently best performing perovskite solar cells (PSC) employ a perovskite active layer with complex stoichiometry, based on FAPbI3 including cesium and methylammonium substitutions on the A- site, bromine substitution on the X-site.21,22 Again, this complexity is mirrored at the interface to the adjacent transport layers, and likely affects device performance and stability due to interface energy alignment, trap state population and chemical reaction pathways. With these unique surface and interface characteristics in mind, we now turn to examples of specific chemical and physical mechanisms present in HaP semiconductor devices. 7 A.2. Rich chemistry and physics at the interface The influence of passivating effects at the interface was described qualitatively in the initial optical studies of HaPs.23,24 For instance, the long decay times of the photoluminescence signal, attributed to remarkably long charge carrier lifetimes for a semiconductor made by solution-processing near room temperature, were readily seen in MAPbI3 films. This behavior was observable since the suppression of surface recombination was comparably easy to achieve using a Poly(methyl methacrylate) (PMMA) capping layer.23 In addition to long-lived charge carriers, remarkable semiconductor properties in HaPs include unusual defect science,25 pronounced relativistic effects on the electronic structure26,27 along with lattice dynamics that are unusually "soft" for a high-performance semiconductor system.28,29 A more comprehensive collection of the unique set of traits shared by most HaPs has recently been assembled in papers by Egger et al. and Manser et al..30,31 In summary, this combination of characteristics puts HaPs in a special class of semiconductors, within a potential application space that ranges well beyond traditional photovoltaic devices. While the HaP (bulk) material themselves seem to exhibit optoelectronic properties that enable excellent device performance (esp. photovoltaic behavior in solar cells), the interfaces between HaPs and adjacent materials likely determine the quality of the devices and distinguish good from bad ones. This formulates a clear requirement to find ways to maintain the HaP bulk behavior at their surfaces in ways that such surfaces can be transformed into interfaces to adjacent functional layers. The case is well illustrated by the HaP's resilience to the formation of defects. First-principle calculations have been performed to unravel the nature and formation mechanisms of intrinsic point defects such as vacancies, interstitial and anti-site defects.32 Taking MAPbI3 as an example, Yin et al. initially calculated that formation enthalpies of defects that are energetically located in the middle of the band gap (BG) (e.g. Pb and I anti-sites and Pb interstitials) are rather high, while the more easily formed defects, such as I and MA vacancies, exhibit energies close to or immediately at the band edges.25 This is consistent with the experimental finding that the experimentally determined band gap is relatively clean, even though the 8 compound (i.e., it's A and X sub-lattices) is typically highly dynamically disordered (static disorder however occurs in mixed halides), in marked contrast to more traditional elemental or compound semiconductors (e.g., Si, III-Vs) for which device functionality relies on crystalline quality. In part, this apparent contradiction in properties (high optoelectronic quality and dynamic disorder, especially on the X sub- lattice), can be ascribed to the relatively benign nature of defects related to that sub-lattice. Steirer et al. found from X-ray photoemission spectroscopy (XPS) that some electronic properties of the HaP compounds, such as the position of the Fermi level in the electronic band gap, are resilient to marked structural and compositional changes in the film, such as loss of the volatile organic component, with the caveat that this result was obtained under vacuum conditions.33 We note that the various defect mechanisms can be part of self-healing capabilities, as recently evidenced in APbBr3 compounds.34 Still, such resilience can be compromised at interfaces with a different material in the device if further chemical reactions occur. In that case, defective interfaces (i.e., deviating from atomically clean ones as between two organic semiconductors) could lead to the formation of recombination centers and eventually disrupt charge carrier transport across the interface. Furthermore, it was proposed that a precise control of the defect composition by adjusting the growth conditions would be the key parameter to controlling the doping type of the resulting perovskite thin-film. Initially, Yin et al. report that Pb vacancies would lead to p-type films while methylammonium interstitials would lead to n-type MAPbI3 films,25,35 which was further explored experimentally, e.g. by post-treatment of a HaP film.36 However, photoemission spectroscopy measurements by Miller et al. and Schulz et al. indicated that the Fermi level position in the band gap of an MAPbI3 layer could also be changed by depositing the film on various types of substrates.37,38 A clear link between these interfacial effects, film formation and defect statistics remains yet to be uncovered. A.3. Relevant interface energetics In order to determine the key parameters that govern the behavior of HaP interfaces, we need to look back at the respective quantities in thin-film technologies from a more general point of view. In this 9 regard, the relative positions of key electronic energy levels of two solids in contact govern electronic charge transfer mechanisms, such as electron or hole injection, and consequently impact device characteristics.39,40 However, before we describe energy level alignment and interactions at an interface between two different compounds, we give a set of definitions for the surface, i.e. the solid-vacuum interface, which clearly is easier to assess experimentally. With respect to the electron energetics of a surface of a solid, two energy levels constitute important reference points for the position of the electronic levels. The Fermi level (EF) is defined as the energy at which the probability of occupation of an electronic state is ½. In a metal, EF cuts through the conduction band and marks the limit between occupied and unoccupied states. In an intrinsic or non-degenerately doped semiconductor, however, EF is located within the band gap. The vacuum level EVAC is defined as the energy above which an electron can escape from the solid into vacuum. EVAC does not refer to the absolute vacuum level but is defined as the local vacuum level, which deviates from the absolute one because of attractive and repulsive forces, due for example to electrostatic dipoles, that operate at the local level at the surface.41 Thus, the composition and resulting electrostatic energy landscape at the surface strongly influences the position of EVAC, which in turn can be changed by means of surface conditioning (e.g. through adsorption of molecules).41 The energy difference between EVAC and EF defines the work function Φ, i.e. 𝛷𝛷= 𝐸𝐸VAC− 𝐸𝐸F. To a first approximation, the work functions of two isolated surfaces are useful parameters to predict the charge carrier transfer direction and estimate the energy level alignment between the two materials, when the surfaces are brought into contact to form an interface. However, two important points need to be emphasized: (1) the work function, as usually measured and assessed in experiments, is always a convolution of a bulk part and a surface part. The bulk part corresponds to the electrochemical potential 10 relevant for the exchange of charge carriers; (2) the surface part takes into account various physical effects that are only present at the solid-vacuum interface, e.g. the evanescent electron density tailing into the vacuum, and the vacuum level shift due to surface dipoles, which is fulfilled in good approximation for solid-gas interfaces as well. Hence, the work function reported from experiments such as contact potential difference measurement with a Kelvin probe or photoemission spectroscopy measurements remains a well-defined parameter only at the exposed surface. A detailed discussion on the role and assessment of the vacuum level has been revisited recently by Kahn.42 In a broader picture, the classical semiconductor thin film device is comprised of multiple metal -- semiconductor, insulator-semiconductor, insulator-metal, and/or semiconductor-semiconductor interfaces, all of which require distinct model descriptions and routes for characterization. Considering interfaces with HaPs, electronic transport can primarily be attributed to electrons and holes at the conduction and valence band edges, respectively, if we neglect defect-level assisted transport. Hence, knowledge of the position of EF in the semiconductor gap and the relative positions of the band edges with respect to the Fermi level and vacuum level becomes of primary interest. We, thus, focus on the role of the band offsets (e.g. ∆EVB for the valence bands in figure 1) at the interface between a metal contact and a semiconductor, as well as between two semiconductors. In the latter case, the offset between the conduction band edges of the two constituent materials determines the electron transport across the interface, while the same holds true for the valence band edge offset and hole transport. In this context, we introduce two further energy quantities: the ionization energy (IE), defined as the energy difference between vacuum level and valence band maximum, and the electron affinity (EA), which is the equivalent quantity measured between vacuum level and conduction band minimum. Generally, these energies can be understood as the minimum energy required to remove a valence electron from the surface, or the minimum energy released by capturing a free electron from vacuum, respectively. 11 Mott and Schottky formulated an early model according to which transport across a metal-semiconductor interface is via thermionic emission through the interfacial barrier, estimated from the difference between the metal work function and IE (EA) of the p-type (n-type) semiconductor. This simple evaluation of the barrier energy corresponds to what is known as the Schottky-Mott limit. In the case of a doped semiconductor, the barrier height corresponds in principle to a mismatch between the metal and semiconductor work functions.43,44 The equivalent model for semiconductor-semiconductor heterojunctions is the so-called Anderson rule,45 whereby the electronic structure of the interface is defined by vacuum level alignment, and the interface energy barrier for electron (hole) transport is the difference between the electron affinities (ionization energies) of the two materials. Decades of research ensued to develop more realistic models of semiconductor heterojunctions, leading, for example, to the introduction of an interface dipole that self-consistently accounts for the difference between the semiconductor charge neutrality levels, which determine the flow of charge at a metal/semiconductor contacts.46 Within the last 20 years in particular, the approach was expanded to include hybrid interfaces between organic and inorganic layers.47 -- 50 A significant mile stone is the investigation of the induced density of interface states.51 Earlier inclusion of polaronic effects were challenged by the detailed dissection of the spatial profile of the electrostatic potential in the organic layer via the Poisson equation,50 which yields a more universal model to distinguish the Schottky-Mott limit from cases with pronounced charge transfer upon interface formation. It became possible to explore this description with the advent of powerful computational methods for the calculation of the electronic structure of semiconductor surfaces and interfaces, and more accurate direct and inverse photoemission spectroscopy (PES/IPES) experiments on in situ layer growth with atomic precision, to determine band onsets (i.e. the distance of the band extrema from EF) at the surface and band offsets at the interface of two semiconductor systems.52 12 Turning now towards HaP-based devices and the typical cell stack illustrated in Figure 1b, we see a variety of interfaces between transparent oxide and HaP semiconductors as well as between HaPs and organic semiconductors, which have been the topic of several reviews and perspective pieces.16,53 -- 57 In the latter case, the transport levels are the lowest unoccupied molecular orbital (ELUMO) and conduction band minimum (CBM) for electrons, and the highest occupied molecular orbital (EHOMO) and valence band maximum (VBM) for holes. In the following, we discuss the role of the alignment of these levels in the device (Figure 1c). We describe current progress on the determination of these properties in the later chapters of this review. A.4. Applications: The key role of interfaces in devices A.4.1 Electronic transport across interfaces in optoelectronic devices: the example of thin-film PV In order to understand the role of interfaces in HaP-based optoelectronics, we need to consider the overwhelming importance that interfaces have in all thin-film devices. Concepts of semiconductor physics, for which many descriptions rely on the perfect periodicity of the crystal lattice, are central to discussions on thin-film semiconductor technologies, including photovoltaic devices. Clearly there is no perfect periodicity at interfaces between various functional layers, such as absorber and charge carrier transport materials, in a solar cell. This case can be made for most relevant photovoltaic technologies, where the classical homojunction between p-doped and n-doped regions of the same material has been replaced by heterojunctions between different materials. Along this disadvantage, an advantage of such heterojunctions is that they offer a higher degree of freedom for the device layout and ultimately promise higher performance than many homojunctions. The degree of complexity within the device increases with the number of interfaces, which is particularly true for multijunction photovoltaic devices, seen as an important promise of HaP solar cells, as part of 13 tandem devices.58 -- 61 This imposes stringent requirements on the design of interfaces and on analysis of their properties.57 We note that most of the loss processes in thin-film photovoltaic devices are dominated by non-radiative electron-hole recombination via defect states that are primarily attributed to interruptions in crystal periodicity at interfaces. Within this context, we can consider the surface and interface as some of the largest 'defects' in the solid. This idea is readily demonstrated as a function of the crystalline quality of the absorber layer in thin-film silicon solar cells: for such devices, based on crystalline Si (c-Si), the lifetime of photogenerated charge carriers is on the order of milliseconds and thus vastly exceeds the carrier diffusion time to the interface with the charge transport layers, which is on the order of microseconds.62 We can thus assume that recombination in the bulk will be negligible, compared to recombination at the interface.63 The main physical loss mechanisms are depicted in Figure 2. We discuss here the example of the surface (interface) recombination current (or loss current) JS of electrons at a hole contact, which is given by: 𝐽𝐽S=𝑞𝑞𝑞𝑞𝑛𝑛0 𝑒𝑒∆EF 𝑘𝑘B𝑇𝑇 ⁄ where q is the unit (electron) charge, S the surface recombination velocity, n0 the electron density at the hole contact in thermal equilibrium, ∆EF the quasi Fermi level splitting and kBT the thermal energy. For any given ∆EF, JS scales proportionally with surface recombination velocities and charge carrier densities at the interface. S is mainly determined by the density of surface defects acting as recombination centers, whereas n0 is determined by the potential drop at the electrodes and is related to the built-in field. For a higher built-in field, n0 decreases at the hole contact and so does the equilibrium hole concentration p0 at the electron contact. With this expression of the recombination current, the path to minimizing the interfacial recombination current lies in designing defect-free interfaces with band alignment that retains the maximum built-in field. For c-Si solar cells, the use of passivating selective contacts, which conduct 14 one carrier type but block the other caused by an asymmetry in carrier concentration and energy level alignment, has been a key solution.64 While these surface recombination considerations apply to all solar cells, they appear to be even more important for HaP perovskite solar cells (and related optoelectronic devices). As described in the previous sections, HaP light absorbers present very particular challenges with respect to interface engineering efforts. Given the relatively recent emergence of HaP-based solar cells and other HaP-based optoelectronic devices, we are still lacking comprehensive models of interface band alignment, and Figure 2 -- Interface-related loss mechanisms in a simplified photovoltaic device. After photoexcitation (1) carrier transport to the contact interfaces occurs without significant losses. At the interface, carrier extraction can be impaired by (2) interfacial energy barriers due to inadequate band alignment, (3) defect- induced surface (interface) recombination velocity S and (4) back recombination of extracted carriers, which still reside in the interface region. ECBM, EVBM and EF are the conduction band minimum, valence band maximum, and Fermi level, respectively. Reprinted with the permission from 57. Copyright 2018 American Chemical Society. 15 information on the nature, density and origin of bulk and surface defect states, which take into account the full picture of the rich chemistry and challenging physics of this material class. In the spirit of Kroemer's dictum that the interface is the device65, we reiterate the question posed in the title: Halide perovskites -- Is it all about the interface? Here, the satisfactory answer would go beyond the drawing of a simple correlation between device performance and interface formation, and rather consider if the interface is the primary contributor to determine the mode of operation of devices, based on these materials. A.4.2 Charge transfer vs. recombination current in HaP solar cells Attempts have been made to better differentiate bulk from interface recombination in HaP solar cells by connecting the diode ideality factor to optical measurements, which suggest that recombination at interfaces is the main contributor to performance losses.66 The results of impedance spectroscopy measurements to probe surface recombination and photogenerated carrier collection in PSCs suggest that interfacial recombination is the main factor for photovoltage loss (on the order of 0.3 V), on top of the thermodynamically determined losses from the radiative limit and is due in part to charge accumulation at the interfaces of these cells.67,68 16 As described in the beginning of section A.2, the role of recombination and charge transfer at interfaces can be evaluated by transient optical experiments. In this regard, decay curves from time-resolved photoluminescence measurements demonstrate the need to understand and quantify charge transfer and interfacial recombination rates in HaP semiconductors. Krogmeier et al. performed a quantitative analysis via numerical simulation of the transient photoluminescence of MAPbI3/PC61BM heterojunctions, from which they conclude that charge accumulation at the interface is a dominating factor.69 Schematically, the implications of the band offsets, which are pictured in Figure 3a during a laser pulse and in Figure 3b after a delay, allow for an assessment of likely recombination pathways at the interface. The input parameters can then be used to simulate the PL decay signal (Figure 3c) and determine the differential lifetime (Figure 3d) for low and high laser fluences (EL). Depending on the fluence, two different time regimes were identified, with the first interval (up to 60 ns) being dominated by charge transfer to the quencher according to the description of the charge transfer current for electrons: Figure 3 -- Band diagram and PL transients of simulated perovskite (bulk) and PCBM (quencher) layers. (a) Band diagram during the laser pulse. (b) Band diagram for longer delay times. (c) TRPL signal for two laser fluences EL. (d) Differential lifetime showing two constant regions due to accumulation of charge carriers. (e-g) 2D error plots for the transfer and interface recombination velocities fit parameters. Reproduced from Ref. 69 with permission from The Royal Society of Chemistry. 17 𝐽𝐽T,n=𝑞𝑞𝑞𝑞𝑇𝑇 (𝑛𝑛𝑏𝑏,𝑖𝑖𝑖𝑖𝑖𝑖−𝑛𝑛𝑞𝑞,𝑖𝑖𝑖𝑖𝑖𝑖) 𝑒𝑒∆Wc 𝑘𝑘B𝑇𝑇 ⁄ with ST the charge transfer velocity, nb,int and nq,int the charge carrier densities at the interface in the HaP bulk and PCBM quencher, and ∆Wc the offset between the MAPbI3 conduction band and the PCBM LUMO, i.e. ∆Wc = ELUMO -- ECBM. Interface recombination dominates the second time regime and is determined by the carrier densities at the interfaces resulting from charge accumulation at the barriers. Subsequently, the numerical model served as a set of equations to fit charge transfer and interface recombination velocities for real PL spectra acquired at various laser fluences, for which the minima in the 2D error plots yield the optimal parameter set (Figure 3e-g). In this example, a quantitative understanding of the energy levels and hence ∆Wc would serve as an important check on validity of the model for this system. A.4.3 Implication for interfaces beyond electronic transport It is important to note that further interface factors, apart from electronic transport and charge carrier extraction, outlined above, affect HaP device functionality. As a result of the HaP compounds being relatively soft, ion migration can occur in these materials,70,71 an effect that has been proposed to be driven or suppressed, among other possible factors, also by the presence or absence of chemical passivation at the interfaces.72,73 More generally, the interface can serve as a nucleation site for intrinsic and extrinsic defects. While such defects clearly can impact electronic transport properties, and particularly the recombination current JS described in the previous sub-section, we want to highlight further technological implications concerning the stability of the HaP layer and hence the device stability and lifetime, which has emerged as a crucially important figure of merit for the further development of HaP-based solar cells.74 Recent studies demonstrate that the stability of perovskite solar cells (PSC) can be improved through deliberate tailoring of interface properties. Grancini et al. achieved a one-year stable PSC module by 18 employing a 2D/3D HaP heterojunction.75 The general claim in this approach is that it yields a built-in 2D/3D HaP, that forms a phase segregated thin-film. In this graded structure, the 2D layer acts as a protective buffer against moisture at the interface and hence preserves the 3D perovskite region of the film. Alternatively, other research groups have worked on adjusting the hole or electron transport layer side by either modifying the substrate onto which the HaP layer is deposited, or the overlayer on top of the HaP film to improve the device stability.53,76 As an example, a comprehensive approach led to the combination of a tailored SnO2 bottom electrode and a newly synthesized small molecule organic hole transport layer (EH44, 9-(2-ethylhexyl)-N,N,N,N-tetrakis(4-methoxyphenyl)-9H-carbazole-2,7-diamine) capped with a MoOx/Al anode. The resulting PSC could be operated under ambient conditions and without encapsulation for over a thousand hours without significant signs of degradation or decline in power conversion efficiency (Figure 4a).77 It was suggested that this result was achieved primarily by reducing interface chemistry at the oxide/HaP interface and by inhibiting migration through HTL and electrode. We note that especially for hybrid HaPs, the interface/surface is a weak link because of potential loss of the more volatile organic component. Hence, degradation is likely to occur at the surface/interface first. Naturally, this not special for HaPs, as for most materials the bulk is more stable than the surface. Finally, other means of tailoring and controlling HaP interfaces have been shown to be instrumental in the development of novel device classes. As an example, the development that led to the deployment of the next generation of HaP-based quantum dot solar cells was initially driven by the prospect of stabilizing CsPbI3 in its cubic phase through surface passivation of quantum dots.78 This approach was further refined by applying a surface treatment to the CsPbI3 quantum dot film. Exposing the film to a formamidinium iodide salt solution resulted in better interconnections (as the smaller FA replaces the long-chained oleylamine ligands around the dots) between the quantum dots, and hence in a higher charge carrier 19 mobility (Figure 4b).79,80 An additional explanation could be that replacing Cs at the surface of the quantum dot with an organic compound results in a closed shell capping, and therefore reduces the density of Figure 4 -- a) Device architecture of a perovskite solar cell with specifically tailored electron transport layer (SnO2), hole transport layer (EH44) as well as an MoOx/Al electrode for enhanced stability. The power conversion efficiency was recorded for a non-encapsulated device in constant operation under ambient conditions for 1000 hours. Reprinted with permission from Ref. 77. Copyright YEAR by Springer Nature Publishing AG. b) Fabrication scheme and device cross section for a CsPbI3 based quantum dot solar cell with FAI surface treatment leading to a better interconnected film. Reprinted figure with permission from Ref. 79. Copyright 2017 American Association for the Advancement of Science. 20 surface states. Overall, this surface treatment approach played a central role in the realization of a device that currently holds the record value in power conversion efficiency for a quantum dot solar cell.81 In summary, careful design and analysis of interfaces in HaP semiconductor devices is required to understand and improve charge transport phenomena as well as chemical processes that are critical to achieve and maintain high performance device operation. In that regard, a key question to be resolved concerns the persisting entanglement between interface and bulk effects. In the following section B, we will thus first discuss the plain exposed surface of the perovskite with a focus on the chemical surface termination and electronic structure. B. HaP thin-films and single crystals: The exposed surface The relative ease to produce HaP thin-films for photovoltaic applications has led to a wide range of HaP processing routines, with low temperature solution and vacuum deposition processes being the most prominent. Historically, spin-coating has been the method of choice, enriched with additional parameters such as solvent-annealing, hot-casting or vacuum drying, which not only affect bulk crystallization but also likely impact the final HaP film surface in terms of morphology, chemical composition and electronic properties.82 -- 84 We note that these methods produce HaP absorber films that exhibit different degrees of crystalline quality, culminating in record device performance. Despite these encouraging device results, little information is typically available on the surface condition of the HaP films, before deposition of the interface-forming layer onto them, with the exception of few morphological aspects, mostly gained from scanning electron and atomic force microscopy experiments. More detailed scrutiny of the surface formation process for spin-coated thin films should allow clearer assessment of the requirements in various upscaling efforts, e.g. doctor-blading or slot-die coating, which follow similar film growth processes.85,86 In addition to these solution- and sol-gel based deposition processes, evaporation-based 21 methods offer even more possibilities to tune the surface properties. While the vapor deposition of MAPbI3 in either co-evaporation, sequential evaporation or hybrid chemical vapor deposition (CVD) techniques has been well explored early on,87,88 it was not until recently that HaP films with multiple cations and anions were processed through this route in a reliable and reproducible fashion.89 As the surfaces of these various HaP films define one of the two parts of the interfaces to the adjacent functional layers, we begin by exploring their properties on an atomistic scale. B.1. Surface termination and probable chemistry B.1.1. Surface termination in non-stoichiometric thin-films The techniques developed for HaP thin film deposition all suffer to various degrees from offering only limited control and precision over the layer formation. Even in the case of vapor phase deposition, epitaxial layer growth, which has been perfected for nearly all elemental, III-V or II-VI semiconductors, has not yet been achieved for HaP compounds. Hence, surfaces of interest are rarely stoichiometric and usually defective. Nonetheless, before classifying the surface defects, we begin the discussion with a theoretical description of the stoichiometric HaP surface of HaP in the cubic, tetragonal and orthorhombic crystal structures, based on density functional theory (DFT) slab calculations.90 -- 92 Note that, to date, a large body of computational theory has been dedicated to investigations of the structural and optoelectronic properties of HaPs. The full exploration of the unique combination of materials' bulk properties is beyond the scope of this review and is covered extensively in other reviews.32,93,94 Here, we select some examples of slab calculations that are of primary relevance for the understanding of the surface/interface formation. For our discussion of the theoretical and experimental approaches, the underlying questions always remains: 22 • Can one derive a comprehensive picture of the surface of HaP compounds? • Which, if any aspects of the surface are strongly coupled to the unique combination of materials properties, observed in HaPs? • In how far do surface properties affect those of resulting interfaces with adjacent functional layers (e.g. for charge transfer or passivation) and how significantly are their electronic properties affected? Theoretical modeling of stoichiometric HaP surfaces: We begin by looking at the intrinsic surface properties for various structures of the same HaP compound, i.e., the tetragonal, orthorhombic and cubic phases of MAPbI3. Haruyama et al. investigated the structural stability of the (110), (001), (100) and (101) surfaces in the tetragonal phase using DFT calculations on a plane wave basis set and including van der Waals interactions. By sampling through various PbIx polyhedron coordinations, they found that for the energetically favorably (110) and (001) surfaces the formation enthalpies of the PbI2-rich flat and the "vacant", i.e. MA-rich, surface terminations are similar (see Figure 5a). Hence, they suggest that there is a small window under thermodynamic equilibrium growth conditions, within which both surface terminations coexist. However, generally the vacant, i.e. MAI terminated, surface is more stable and more likely to grow in thermodynamic equilibrium.91 Quarti et al. reach a similar conclusion in their DFT calculations of the (110) and (001) surfaces of MAPbI3 in the tetragonal phase and describe the MAI termination to be significantly more stable than the PbI2-rich one.95 For the stoichiometric orthorhombic phase of MAPbI3, Wang and coworkers optimized surface structures of the different spatial isomers and found minimum formation enthalpies for the (100) and (001) surfaces.92 They considered the various possible spatially and constitutionally isomeric structures by sampling through a set of orientations and connectivities of the surface Pb-I bonds. As a direct result, the stabilization mechanism was correlated to the coordination number of the Pb-centered octahedra, i.e. 23 the number of broken Pb-I bonds, and the number of surface iodine atoms. Wang expanded their investigation by molecular dynamics (MD) calculations to monitor structural reorganizations or isomerizations, which they eventually rule out in their study.92 Figure 5 -- DFT slab calculations of the tetragonal phase of MAPbI3 to assess surface termination. (a) Relaxed structures for the most stable (110) and (001) surfaces with "vacant" and PbI2-rich flat surface terminations. Reprinted with the permission from Ref. 91. Copyright 2014 American Chemical Society. (b) Top and side views for the classification of the PbI2 and MAI surface terminations for the (001) surface (c) Different orientations (black arrows with NH3 at arrow head) of the MA cations (apolar, topC, topN) with respect to the (001) surface. Reprinted with the permission from Ref 95. Copyright 2017 American Chemical Society. The color maps are: lead=gray, iodide=purple for (a) and lead=black, iodide=red, carbon=green, nitrogen=blue, hydrogen=white for (b) and (c). 24 In this regard, Torres et al. provided calculations for the cubic phase of MAPbI3,90 the results of which are ostensibly in conflict with the finding from the preceding study. They describe the relaxation of four different surfaces in their DFT calculation of 2D slabs using pseudo-cubic unit cells and MD methods. As they characterize the initial surface morphology by the termination of the cell, i.e., either MA- or flat PbI2 terminated, as well as by the orientation of the organic cation MA with respect to this PbI6 cage, they observed that mainly three competing effects drive a pronounced surface relaxation: (i) on the flat PbI2- rich surface, the inorganic cage can be subject to contraction; (ii) the MA group's tendency to maximize hydrogen bonds to the bridging iodine atoms; and (iii) the directional alignment of the dipole of the MA group.90 While generally the MA+ ion is believed to be free to rotate within the cage in the bulk MAPbI3, its orientation on the surface is subject to stabilization mechanisms that are on the order of 1-3 kBT per unit cell and thus to be reckoned with at room temperature. In a simple model, the orientation of the MA+ moiety can be classified as - a non-polar surface, - a surface with the carbon moiety sticking out (topC), or - a surface with a protruding nitrogen moiety (topN) as depicted in figure 5b. Slab calculations yield a minimum of the surface energy for the topC configuration.95 Non-stoichiometric HaP surfaces and surface reconstruction: In the context of searching for the lowest energy configurations, these theoretical computations are generally constrained to yield relaxed structural parameters based on a finite set of unit cells in the slab, usually limited to a few hundred atoms. Hence, important processes involving long-range structural relaxation phenomena could be missed. In this regard, surface reconstruction phenomena have been well explored for a broad set of materials in general, and for metal oxide perovskites in particular. For the latter, we find extensive phase diagrams for various surface structures, which are usually attributed to instabilities due to perpendicular macroscopic polarization of the surface layers. In those cases, a 25 reconstruction of the polar surfaces leads to a compensation and hence depolarization, which ultimately stabilizes the top layer. These structural alterations have a pronounced effect on the surface electronic structure and energetics.96 Generally, electron diffraction experiments (e.g. Low Energy Electron Diffraction, LEED) and scanning tunneling microscopy (STM) methods can be employed to determine changes to the surface structural parameters, and investigate the surface over sampling areas extending from a few to several 100s of nanometers. However, the typical requirements for these experiments, such as the preparation of atomically flat surfaces and measurements under ultra-high vacuum conditions, have considerably restricted their applications to HaP surfaces, with only very few studies published so far on this specific topic.97 Unfortunately, the generation of reliable LEED data remains difficult, as the impact of the flux of electrons required for this technique, causes severe damage to the MAPbI3 layer.98 Nonetheless, successful measurements of the surface crystal structure of a MAPbI3 single crystal has been reported recently and the results confirm the transition temperature from the tetragonal to cubic phase (see section B.3.1).99 She et al. succeeded in growing ultra-thin MAPbI3 films with a thickness of nominally 10.8 monolayers on top of atomically clean Au(111) surfaces by co-deposition of CH3NH3I and PbI2.100 Subsequent in situ STM experiments performed at 78 K revealed the formation of flat MAPbI3 terraces on the scale of 100 nm, with steps of a monolayer of half the HaP's unit cell, i.e. one PbX6 octahedron and one MA unit, could be identified (Figure 6a,b). The measurements did not reveal the presence of surface reconstruction of the MAPbI3 film over multiple unit cells, but instead pointed to two distinct rearrangement patterns of the surface atoms on the unit cell scale. In the high-resolution images in figures 6c,d the "zigzag" and "dimer" patterns of the bright protrusions with a periodicity of the perovskite lattice constant can be clearly distinguished. In certain areas of the terraces, both phases co-exist in close vicinity (see figure 6e), and each phase can be switched to the other reversibly by applying a tunneling current. Based on this behavior, one can exclude that the different phases represent different surface terminations. In the 26 chosen experimental configuration, the STM measurements probed the filled states of the surface, i.e. the valence band states, and hence the experiments were sensitive to the I 5p as well as the Pb 6s and 6p orbitals, which mark the largest contribution to the MAPbI3 valence band DOS.37,101 A flat PbI2 terminated surface would exhibit a Pb-I bond distance of approximately 3.2 Å, whereas the periodicity extracted from the STM images amounts to 8.5 -- 8.8 Å. Hence the bright spots are identified as iodine atoms on the top corner of the PbI6 octahedra for the MAI terminated (001) surface of MAPbI3; notably surface defects in terms of missing iodine appear as dark spots in the images. Complementary DFT calculations suggest that this rearrangement of surface iodine atoms originates from the orientation of the MA+ cation and corresponds to a slight depolarization and stabilization of the surface, in accordance to earlier reports.91 The implication of this effect on the surface electronic properties can be dramatic. Indeed, any ferroelectric order from the bulk material would be modulated by this surface depolarization, and the Figure 6 -- STM images of MAPbI3 thin-films. (a) Large-scale image of atomically flat terraces (300 × 300 nm2). (b) Height profile along the dashed line in (a), showing the step edges of a gold terrace (2.4 Å) and a MAPbI3 layer (6.3 Å). (c,d) High-resolution images of the MAPbI3 zigzag and dimer structures (4.3 × 4.3 nm2) on a MAPbI3 terrace. (e) High-resolution image of the two phases coexisting in the same region (5.6 × 5.6 nm2) with the inset showing the height profile along the dashed line. (f) Orthorhombic MAPbI3 unit cell. Reprinted with the permission from Ref 100. Copyright 2016 American Chemical Society. 27 disruption of the symmetry could also lead to the proposed Dresselhaus- and Rashba-splitting in HaP compounds, which would otherwise not occur in the cubic crystal phase without inversion center (e.g. MAPbBr3).102 Surfaces of mixed halide HaPs: The complexity of these surfaces rises with the number of components in the ABX3 compound, i.e. a more than one type of halide anion on the HaP's X-site and/or various cations such as MA, FA and Cs, on the A- site. Mixing halide compositions in HaP films is the most common approach to tune the band gap of the resulting compound but can lead to instabilities like a pronounced light-induced segregation of halide species.103 However, only few studies, theoretical or experimental, have investigated the specifics of surfaces of mixed halide HaP systems. The large number of combinations and local alloying phases often make clear correlations between results from different studies difficult. The case is illustrated best for chlorine incorporation and surface termination in MAPbI3-xClx present in the technologically relevant MAPbI3-xClx compound, for which the determination of the absolute chlorine content and traces remains elusive.104 Mosconi et al. calculated that the band gap for the surface of a Cl-terminated MAPbI3 film should not change since the chlorine atoms would only induce additional energy levels outside the MAPbI3 gap, that would only indirectly change the band gap.105 Thus, theoretically, no major change in the band gap would be expected for traces of Cl in MAPbI3 or on the MAPbI3 surface. Experimentally, small amounts of chlorine could be traced by angle resolved XPS measurements confined at the TiO2/HaP interface.104 In a different example Yost et al. performed STM measurements at the cross-section of a cleaved MAPbI3-xClx thin-film to probe the homogeneity of the electric properties and suggested a correlation to the chlorine content in the so-exposed cross-sectional surface.106 They found domains with differing tunnel resistances, yet similar band gaps (see Figure 7a), which led them to excluded that the domains were 28 ferroelectric features but instead correspond to variations in the surface I/Cl ratios. Indeed, aside from only changing the interface chemistry, a change in surface termination can play a significant role for charge carrier transfer rates to adjacent layers as will be discussed later in section C of this review. Surfaces of mixed A-site cation HaPs: The case for increased complexity and substantial changes in surface stabilization mechanisms becomes evident, when MA+ is replaced with the smaller Cs+ cation. The resultant CsPbI3 compound does not satisfy the Goldschmidt tolerance factor rule, and as a consequence the bulk material does not assume a stable cubic phase at room temperature.107 However, a phase stabilization for the cubic phase in CsPbI3 is achieved by the synthesis of the material in the form of nanocrystals and quantum dot films;78 the condensed film consists therefore of an array of quantum dots, which retain the cubic phase due to the large contribution of the surface energy linked to the increased surface-to-volume ratio. A good example of a rich surface phase diagram, studied by first principle calculations, is afforded by the tin perovskite-based cesium and rubidium mixed cation system, RbxCs1-xSnI3, which stands at the edge of the Goldschmidt tolerance factor range (t = 0.8 for RbSnI3 and 0.83 for CsSnI3) and hence exhibits limited phase stability in the cubic perovskite phase.108 In particular the small rubidium cation might be too small to sustain a stable perovskite structure (e.g. in the more widely studied Pb-based HaP systems no experimental evidence for Rb on the A-site has been found), while the conjecture is that cation mixing would lead to (increased) entropic stabilization. In their approach to capture the surface thermodynamics, Jung et al. calculated the surface slabs of CsSnI3 and RbSnI3 and assumed Vegard's linear relation to extrapolate the lattice parameters between those two end points.109 Similar to the case of the organic A- site cation, Cs+ and Rb+ , when placed on the A-site in the calculated DOS of RbxCs1-xSnI3, do not contribute directly to the band edge DOS, as the valence band is mainly comprised of I 5p, and Sn 5s orbitals, whereas 29 the Sn 5p dominates the conduction band DOS. However, the electronic properties, and particularly the band gap, could be changed locally by steric effects, as cations of different sizes alter the bond lengths Figure 7 -- (a) Scanning tunneling microscopy dI/dV mapping at -2.0 V of a MAPbI3-xClx thin-film cross- section (20 × 20 nm²) with representative dI/dV point spectra measured at low and high contrast regions in point A and point B in the image, respectively. Reprinted with the permission from Ref. 106. Copyright 2016 American Chemical Society. (b) Side view of the relaxed CsSnI3(RbSnI3) (001) surface slab with CsI(RbI) and flat SnI2 surface terminations, respectively (Cs=teal, Rb=red). (c) Calculated surface energy as a function of the change in ΔµSnI2 for the surface terminations from panel (b). (d) Calculated band diagram for the (001) surfaces of CsSnI3(RbSnI3) with respect to the vacuum level and with horizontal solid and dashed lines referring to the HSE06 calculated valence and conduction band edges with and without consideration of SOC effects. Comparison to experimental data referenced in Ref. 108. Reprinted with the permission from Ref. 108. Copyright 2017 American Chemical Society. 30 and angles of the SnI6 octahedron and hence its shape. The SnI2 chemical potential (ΔµSnI2) determines the likelihood of various surface terminations and defines the phase diagram depicted in figure 7c. Jung et al. found that both alkali iodide terminated (100) surfaces have distinctively lower surface energies (∆E > 3 meV/Å²) under CsI- and RbI-rich conditions than under SnI2-rich conditions, respectively. In contrast, the surface, which is terminated by truncated octahedra (SnI2-rich), has only a slightly lower surface energy (∆E < 0.5 meV/Å²) under SnI2-rich growth conditions than under CsI- and RbI-rich growth conditions. These findings suggest that the surface of HaPs with ABX3 structure generally tends to be capped by AX surface terminations, analogous to the specific case of MAPbI3. However, under excess BX2 growth conditions, the AX and BX2 surface terminations compete and the result depends on the immediate environment.108 To date no further data are available for the mixed cation surface system, but the first principle calculations of the electronic structure of the individual phase pure systems, as presented for RbxCs1-xSnI3, point to the existence of slight local fluctuations of band edge energies, which are strongly dependent on the surface termination and hence growth conditions. This also means that associated charge transfer rates across an interface with such a surface would be affected, which could complicate the selection of the ideal charge transport material. Having discussed the nature of the non-stoichiometric surfaces of HaP compounds, we now turn towards the issue of interface formation, namely the adsorption and aggregation on the HaP surface of species that are not constituents of the ABX3 material. B.1.2. Aggregation of "Extrinsic" Species In the context of fabrication and performance of HaP-based optoelectronic devices, it is of paramount importance to understand the nature and impact of interactions between a variety of extrinsic elemental or molecular species and HaP surfaces. Various scenarios and types of interfaces should be considered: 31 (i) Interfaces with passivating films and buffer layers, which suppress recombination losses, form barriers for migrating ions, shield the bulk from radiation and more generally, can act as encapsulating agents for the cell. (ii) Interaction with ions and dopants from other parts of the device (Metal, Li+); these constituents of contacts or charge transport layers can induce chemical reactions or act as optoelectronic active centers once they migrate to the interface with the HaP film. (iii) Interaction with environmental species; primarily O2 and H2O play a central role due to their natural abundance, particularly for outdoor operating conditions of PSCs. (iv) Interface formation with charge transport layers, often an organic semiconductor, a transparent conductive oxide or simply the metal electrode. We will touch upon species that comprise buffer layers at a later point in this review, when we discuss passivation effects, and we turn now to the interaction with metals and dopant molecules. First, the migration of metal atoms from the device electrodes into the perovskite absorber layer has been Figure 8 -- Likely Interaction scenarios with extrinsic species at the HaP surface, including (i) passivation layers, (ii) migrated dopant molecules and metal ions, (iii) atmospheric gases and liquids and (iv) charge transport materials. 32 identified as detrimental to the device functionality and stability. Using time of flight secondary ion mass spectrometry (ToF-SIMS) measurements, Domanski et al. found that the incorporation of Au atoms into FA1-x-yMAxCsyPbI3-zBrz occurs after operating and temperature cycling of a PSC layer stack. Au acts as a catalyst for irreversible decomposition of the HaP layer, leading to an irreversible loss in device performance.110 Understanding of this chemical process, which is still at an early stage, will be subject of a more detailed discussion in section C.3, when we discuss this interface in more detail and present mitigation strategies to suppress the degradation processes. Second, the interaction with dopant species from adjacent charge transport layers can be quite complex and only limited data are currently available to describe the implications of extrinsic dopant contributions to the HaP structural and optoelectronic properties. More in general, attempts to dope HaP semiconductors with extrinsic ions such as Bi3+ or Sr2+ showed limited success in increasing the density of free carriers in the film, and hence no strong electronic interactions in terms of donating or accepting free carriers from the HaP host have been proposed.111,112 In a recent approach, Li and coworkers showed that extrinsic ions, which are usually present in the doped organic hole transport layers (e.g., Li+, H+, Na+), can readily migrate to and through the HaP layer. In this context, it was the latter case and hence accumulation of Li+ ions at the TiO2 interface, that modulated carrier injection from the HaP into the TiO2 layer and thus PSC performance, including the degree of hysteretic behavior in the cells current-voltage characteristics.113 Organic molecular adsorbates on HaP surfaces: 33 Going back to the initial hypotheses, out of the four scenarios outlined at the beginning of this subsection, the interaction with species from the ambient and the interaction with molecular species in charge carrier transport layers have been subject to additional scrutiny and explored at the atomic level.90,95 We give here the example of CH₃OC₆H₅ (methoxybenzene or anisole) adsorbed on the tetragonal (001) surface of MAPbI3. Historically, the organic semiconductor N′,N′-octakis(4-methoxyphenyl)-9,9′-spirobi[9H- fluorene]-2,2′,7,7′-tetramine (Spiro-MeOTAD or Spiro-OMeTAD), depicted in Figure 9a, has been the most commonly employed charge transport material on the hole collection side of solid state HaP solar cells.8 Anisole is also the end group of the Spiro-MeOTAD molecule and other polytriarlyamine derivatives that Figure 9 -- (a) Chemical structure of Spiro-MeOTAD. The Methoxybenzene (anisole) unit is marked in red and shown in the inset (C=teal, H=white, O=red).(b),(c) Adsorption of anisole on top of a pseudocubic MAPbI3 slab. On top of the MAI-terminated (b) and PbI2 terminated (c) (001) surface. Calculated binding energy variation for the anisole molecule anchored with the methoxy pointing towards the MAPbI3 surface at a constant height of 2.5 Å along the path C→ A → B → C (top view of the cell in inset), and as a function of height in positions A, B and C. Reprinted with the permission from Ref. 91. Copyright 2014 American Chemical Society. 34 are commonly employed in organic hole transport layers. In their DFT-based calculations, Torres et al. describe that adsorption of anisole on the (001) surface of MAPbI3 occurs only for termination with exposed PbI6 octahedra, which corresponds to the MAI-terminated surface. In this case, the binding energy exhibits a stable minimum for the methoxy group in the interstice site of four corner-sharing octahedra. In contrast, the flat PbI2-terminated surface does not exhibit a stable anchoring site for the adsorption of the molecular compound. The calculations do not reveal any correlation between the binding energy and the orientation of the MA+ cations beneath the Pb-I coordinated surfaces. Hence the adsorption mechanism is described in terms of competing repulsive electrostatic interaction between the methoxy group and the protruding iodine atoms, and the attractive electrostatic interaction between the methoxy group and the Pb2+ ions.90 Oxygen species adsorbed on HaP surfaces: Calculations were also performed for the adsorption of water and other oxygen containing species on HaP surfaces. The issue is of high technological relevance, as water ingress into HaP thin-films occurs fast and already on a time scale of seconds, at a relative humidity as low as 10%.114 The HaP film incorporates water molecules by reversibly forming monohydrates or, in the case of MAPbI3 for instance, transitioning into a bihydrate phase of isolated [PbI6]4- octahedra.115 -- 117 However, the role of oxygen species in reducing the integrity of the HaP layer is even more pronounced since photocatalytic reactions are readily observed for perovskite films in the presence of oxygen; i.e. in dry air over the course of a couple of hours. For instance, when a MAPbI3 perovskite-based film is exposed to both light and dry air, it rapidly decomposes, yielding the products MA, PbI2, and I2.118,119 Deeper insight into the adsorption process and associated chemical reaction was gained from DFT calculations of adsorbed water molecules on HaPs. Koocher et al. probed water adsorbates on MAPbI3 35 (001) surfaces with a variety of surface terminations and polarities (P+ and P-) as depicted in figure 10a.120 On the MAI-terminated surface, adsorption was found to be energetically more favorable on the positive polarization (P+) than on the negative polarization (P-) surface (see figure 10a), while the opposite is true for the PbI2-terminated surfaces. This behavior was attributed to the competition between hydrogen bond interactions between the MA moieties, the Pb-I cage, and the water molecules. For the MAI-terminated P+ surface, the water molecule can form a hydrogen bond to the exposed NH3 + surface, while interaction Figure 10 -- Interaction of oxygen species on HaP surfaces (a) Water adsorption on MAI- and PbI2- terminated (001) surfaces of MAPbI3 with different polarities. Reprinted with the permission from Ref. 120. Copyright 2015 American Chemical Society. (b) Dissolution of the MAI termination and percolation of H2O through the PbI2-terminated surface of MAPbI3. Reprinted with the permission from Ref. 121. Copyright 2016 American Chemical Society. (c) Preferred superoxide binding sites in MAPbI3 and respective formation energies. (d) Calculated band structure and DOS for oxygen incorporation into MAPbI3 in defect-free (left) and at an iodine vacancy site (right) with MAPbI3 states in blue and oxygen states in red. Reprinted with permission from Ref. 123. Copyright 2017 by Springer Nature Publishing AG. 36 with the CH3 + group on the MAI-terminated P- surface is energetically less favorable. The case is reversed for the polarization of the PbI2-terminated surface, where the sub-surface methyl groups and the surface PbI2 lattice exhibit a weaker interaction for the P- polarization than for the P+ polarization. Hence, the interaction between H2O and the surface Pb atoms is then dominating the adsorption process. Adding MD simulation to first-principles DFT calculations, Mosconi et al. investigated the chemical structure and impact on electronic properties of water molecules adsorbed on MAPbI3 with various surface terminations.121 On MAI-terminated MAPbI3 surfaces, they found H2O molecules to interact with the Pb sites, leading to the nucleophilic substitution of I by H2O and a concomitant desorption of the MA unit. In contrast to this decomposition of the MAI-terminated surface, the PbI2-terminated surface allows for the percolation of H2O molecules into the layer and their subsequent incorporation into the hydrated phase (figure 10b). Mosconi et al. calculate that both hydration processes are exergonic with formation energies of -0.49 and -0.44 eV, respectively, and have only mild effects on the electronic structure of the surface; in the case of the PbI2-terminated surface, the valence band edge is claimed to be stabilized in the interfacial region with the water monolayer. The calculated band gap for a hydrated slab with a 4:1 ratio of MAPbI3 to H2O increased by 50 meV compared to the non-hydrated unit cell. This change in the electronic properties is rationalized by the minimum impact on the structural properties of the unit cell upon incorporation of one water molecule, as the volume expansion for the hydrated tetragonal slab amounted to only 1%.121 Similar results have been reproduced by Zhang et al. with the additional observation of photodegradation pathways.122 Upon attachment of H2O molecules, the usually more stable MAI-terminated surface undergoes a high degree of disorder, which is implied by a slightly broader radial distribution function and more pronounced fluctuations in the bond lengths (e.g. Pb-Pb) after a 40 ps MD simulation. Likewise, but to a much lesser degree, the defective PbI2-terminated surface exhibits the same dynamics, while the non- 37 defective PbI2-terminated surface appears more stable. Nonetheless, both PbI2-terminated surfaces, defective and non-defective, enable the incorporation of water molecules. In summary, under humid conditions the MAPbI3 surface reconstructs towards a PbI2-terminated phase, eventually leading to the formation of the monohydrate MAPbI3·H2O. The effects of adsorption of individual water molecules on the MAPbI3 surface on the MAPbI3 surface electronic structure are minor; with adsorption of the water molecule and the associated surface reconstruction, the band gap increases by roughly 50 meV while only shallow surface states localized around the valence band edge are formed. In a separate study, Zhang et al. took photoexcitation into account, and found that the change in Pb-I bond strength is especially pronounced at sites adjacent to the adsorbed water molecules. Eventually, the significantly weakened bond enables the formation of the hydrated crystal phases at the defective MAPbI3 surface.122 Further details on the role of surface defects for oxygen-related photodegradation processes have been investigated by Aristidou and coworkers .123 Beside the process of hydrate-induced decomposition, photodegradation also occurs in dry environment under light exposure. They found that molecular oxygen (O2) can be incorporated into the surface at iodine vacancy sites. Subsequently, photoexcited carriers that reach this site can lead to the formation of the reactive superoxide ions (O2 -). In their preceding work, Aristidou et al. describe that the superoxide species can then deprotonate the MA+ cation upon photoexcitation, resulting in the decomposition of an MAPbI3 layer into PbI2, water, MA and I2 according to the following reaction scheme:119 4 CH3NH3PbI3 * + O2 - -> 4 PbI2 + 2 I2 + 2 H2O + 4 CH3NH2 The rates of oxygen diffusion and oxygen-induced degradation are linked to the structure of crystallites and grain boundaries on the mesoscopic scale, and to the details of the surface defects on the atomic scale.123 Concerning the mesoscopic scale, HaP films with smaller grains and hence a higher surface to 38 volume ratio tend to allow for a faster diffusion of oxygen and thus superoxide formation with subsequent photodegradation of the HaP film. On the atomic scale, ab initio simulations indicate that superoxides form preferentially on defective surfaces, as depicted in figure 10c. However, forming an O2 - species on either an MA vacancy or a Pb vacancy site is energetically highly unfavorable. Even the formation of O2 - species on the face center of the cubic surface neighboring four iodine atoms is less likely compared to the low formation energy on the iodine vacancy site; a broader rationalization of which is the matching valence of O2 - and I-. The implications on the electronic structure are significant and mark the strong contrast between having O2 - on the face of the unit cell or in an iodine vacancy. If O2 - is introduced in a defect free unit cell, the oxygen valence level appears as a mid-gap defect state. In comparison, the top most oxygen valence level moves to the top of the valence band of MAPbI3 when the O2 - moiety is located on the energetically favorable iodine vacancy site (see Figure 10d). Interestingly, the latter case adds to the many defect scenarios for an HaP compound under ambient environmental conditions, which show only minor effects on the HaP's electronic properties. B.1.3. Typical surface defects, compensation and passivation Before giving a comprehensive account of the electronic structure of HaP surfaces and measurements thereof, we summarize this subsection by several remarks on surface defects along with compensation mechanisms and passivation strategies. In general, we learn from the atomic picture, mostly derived from DFT calculations and MD simulations on MAPbI3, that the majority of defect types induced at the surface of the HaP compound are electronically benign compared to similar defects at III-V semiconductor surfaces, which in organic/inorganic hybrid HaPs can be attributed to the previously described organic surface termination. 39 • For MAPbI3 both MAI- and PbI2-terminated surfaces exist and can form under growth conditions in thermodynamic equilibrium. However, the MAI-surface termination is more stable and hence easier to achieve.91,100,124 • Calculations show that, similar to bulk defects,25 surface defects do not generally introduce electronic states deep in the band gap. However, the PbI2-terminated surfaces exhibit a lower band gap than MAI-terminated surfaces.91,95,125 • Surfaces of ABX3 with > 1 halide on the X site or > 1 cation on the A -- site, do not exhibit intrinsic mid-gap defect states.106,108 • Extrinsic chemical species do not usually dope HaP compounds, i.e. do not function as good electron donors/acceptors, and do not usually introduce recombination centers. However, case- by-case investigations are required, and will be further developed for several examples in the later sections of this review. • Halide vacancies are common surface defects and can act as nucleation sites for extrinsic species, e.g. in the case of superoxide formation.119 • Neither water molecules in monohydrated perovskite films nor superoxides significantly distort the structural or electronic properties of the perovskite layer. However, in conjunction with light exposure, these can lead to a degradation of the HaP film.120,121,123 In summary, electronically active (mid-gap) states are generally not expected in HaP-based optoelectronic devices under realistic environmental conditions, and consequently defect surface states are not directly observed. Nevertheless, in spite of their apparent benign nature, the role of defect surface states is still being debated. In particular, surface defects and the energetic disorder they induce do matter when we look into the extraordinarily long carrier lifetimes, reported in HaP single crystals. Even though no clear- cut chemical picture exists on the atomic level, impedance spectroscopy measurements by Duan et al. suggest the existence of a defect level 0.16 eV above the valence band maximum.126 They ascribe this 40 finding to iodine interstitials, which however have been calculated and experimentally corroborated for the bulk only.25,127,128 Another hypothesis for the existence of trap states is based on local carrier transport properties in HaP thin films, probed by conductive atomic force microscopy measurements. Leblebici et al. suggest a pronounced intra-grain heterogeneity of the electrical properties, which they ascribe to different facets for different crystallites, and which could indicate a significant variation of surface defects.129 In this regard, multiple passivation strategies have been pursued to improve carrier lifetimes in HaP films, which then approach those of single crystals, and hence, could in principle, enhance performance parameters of devices if those could be made with ideal interfaces. Chen et al. propose a Type I interface alignment at the PbI2/MAPbI3 interface,130 which is notably different from the PbI2-termination and respective band gap shrinkage presented earlier. Another common approach is the use of surface modifications through supermolecular halogen bonding donor-acceptor complexation, e.g. iodopentafluorobenzene (IPFB), or ligands such as ethanedithiol (EDT) and tri-n-octylphosphine oxide (TOPO), which enhance photoluminescence to lifetimes on the order of multiple microseconds.131 -- 133 While detailed examples of passivating layers will be discussed in the later sections of this review, the reader is referred to the comprehensive work of Manser et al. for a more detailed account on the competing mechanism of bulk and surface recombination.31 Passivation to suppress the degradation reactions is another important avenue for improving HaP-based devices. HaP thin films with large grains, such as those grown from nanocrystalline nuclei, exhibit enhanced thermodynamic and phase stability compared to finely grained thin-films,134 while we note that in certain cases, e.g. CsPbI3, phase stabilization can be achieved by strain relaxation in nanocrystalline form.78 Alkali halides have been introduced in the fabrication scheme of HaP layers as additives to act as passivation agents in the resultant dry film.135 Their role on the superoxide degradation pathway has been explored and while oxygen diffusion is not hindered, the excitation-induced formation of O2 - is 41 suppressed.123 Furthermore, films that are part of the new generation of mixed cation and anion HaPs are particularly prone to ion migration and can exhibit phase segregation,103 a potential degradation pathway.77 In these cases, a specific route employing a significant load of potassium iodide in the precursor leads to an improvement of the optoelectronic properties of the HaP film.136 This effect is attributed to halide-vacancy management; i.e. a surplus of halide ions is immobilized through complexing with potassium into benign compounds at the grain boundaries and surfaces. B.2. Electronic structure and energetics of the HaP thin-film surface The electronic properties at the surface of HaP semiconductors are derived from the band structure, which in first approximation is not significantly distorted at the surface as discussed in the preceding section. While DFT calculations, based on the greatest gradient approach (GGA) capture the essence of the band structure, the correct computation of the band gap in the bulk and of the valence band dispersion requires an additional theoretical framework. Using quasi-particle, self-consistent GW (QSGW) with accounting for spin-orbit coupling (SOC), Brivio et al. computed band dispersion in various HaP compounds, including that of MAPbI3, pictured in Figure 11a.137 The formal electronic configuration of the components that make up the PbI6 cage is 5d106s26p0 for Pb2+ and 5p6 for I-. The figure provides the orbital character of the individual bands and their contribution to the DOS. The color code of the band structure in Figure 11a attributed the respective electronic states. The valence band maximum consists of a combination of approximately 70% I 5p and 25% Pb 6s orbital character, while the conduction band character is dominated by the Pb 6p orbital. In contrast to this, the molecular MA+ unit exhibits sp3 hybridized σ bonds deep in the valence band. Due to the absence of any strong interaction or hybridization with the inorganic PbI6 cage, they remain without major dispersion. 42 These QSGW calculation already reveal a trend in the band structure, which was further elaborated using additional relativistic corrections:26 valence band maximum and conduction band minimum are shifted slightly from the high symmetry point R as a consequence of the strong SOC. The corrections applied in this case already yield a band gap of 1.67 eV and of optical transitions, which is still a bit too large compared to spectroscopic measurements.138 Finally, the strong dispersion at the band edges indicates a low density of states, a topic that will be discussed in more detail below in section B.2.1. Figure 11 -- (a) Calculated electronic band structure of the cubic phase of MAPbI3 with the valence band maximum set to 0 eV from quasiparticle self-consistent GW computations (QSGW). Color code of the bands according to their orbital character: I 5p = green, Pb 6p = red, Pb 6s = blue. Light-gray dashed lines show corresponding bands in the local density approximation (LDA). VB (CB) are dominated by I 5p (Pb 6p) states in bright green (red), with the darker colors indicating orbital mixing. Reprinted figure with permission from Ref. 137. Copyright 2014 by the American Physical Society. (b,c) STM measurements and differential tunnel current spectra of MAPbI3 acquired from the zigzag (b) and dimer (c) surface reconstruction. Curve intensities are normalized with an identical value at a bias of −1.4 V. Reprinted with the permission from Ref. 100. Copyright 2016 American Chemical Society. 43 STM measurements of a MAPbI3 layer on top of gold reveal the zigzag and dimer structure on the MAI- terminated (001) face as discussed in section B1.1 (see figure 11b and c).100 The associated scanning tunneling measurements, i.e. the differential tunneling current dI/dV as a function of the bias voltage V, yield the onset of the valence and conduction bands, respectively, at the location of the tip and is thus a representation of the local density of states (LDOS). For each tip position, the conduction band minimum is at 0.7 eV above EF, while the valence band maximum is at 1.0 eV below EF. This results in a band gap of 1.7 eV, which is in good agreement with the value computed from QSGW calculations but a bit off from the measured optical gap. Optical gap and transport gap are supposed to coincide in the accuracy limits of these measurements as exciton binding energies in HaPs are low (EB,ex < 2-50 meV).139,140 The match between the band gap measured at the surface, and the values calculated and measured for the bulk, as well as the invariance of the STM-measured LDOS on the selected surface site corresponds well to the theoretical predictions; the surface electronic band structure and band gap are similar to those in the bulk and are not surface site-specific. We discuss below the experimental determination of these values on larger sample sets and areas, for HaP films used in optoelectronic devices. B.2.1. Band edge determination Direct and inverse photoemission spectroscopy (PES/IPES) are the methods of choice to measure the energy positions of valence band maximum (VBM) and conduction band minimum (CBM) and the densities of states (DOS) of frontier electronic states at the surface of semiconductors. In addition, with the extraction of the vacuum level (EVAC) from these measurements, ionization energy (IE) and electron affinity (EA) can be identified. These quantities are central to the determination of chemical and optoelectronic properties at, and carrier transfer rate across, the interface in a device as laid out in section A.3. 44 Initially, the determination of the band edge positions proved difficult for HaP films since a precise distinction between bulk, surface or defect states from photoemission spectra is very challenging. This is generally the case for all materials affected by structural disorder or an abundance of defects. Kraut et al. offered an approximation of the valence band maximum position by performing a linear regression to the leading edge of the valence band spectrum in X-ray photoemission spectroscopy (XPS) data of crystalline Ge(110) and GaAs(110) surfaces. This approach was found to lead to good agreement with onsets determined from theoretical calculations of the valence band DOS used as reference for these highly crystalline, ordered and pristine surfaces.141 This fitting procedure was subsequently applied with great success to a broad range of semiconductor systems, including conjugated organic semiconductors whose frontier molecular orbitals are often determined by the delocalized π electron system.142 In many cases however, this ad hoc approach can be erroneous for semiconductors that have "soft" energy level onsets, as in the case of non-abrupt band edges. This is the case for materials that exhibit a significant contribution of tail states (e.g. through disorder) or, in case of the HaPs, a particularly low DOS at the band edges.101 The latter is comparable to what is found for other lead-based compound semiconductors such as PbS.143 In these cases, extrapolating the perceived linear part of the band onset becomes somewhat subjective and can yield VBM positions that are too deep,143,144 leading to unphysical results such as the prediction of an excessively large band gap. In an initial attempt to circumvent this problem, the low DOS at the band edge at the valence band of MAPbI3, MAPbI3-xClx and MAPbBr3 was visualized and approximated in a semilogarithmic representation of the valence band region,145 similar to the analysis of defect and tail states in organic semiconductors.146 Together with the evaluation of the conduction band minimum from concomitant IPES measurements, these experiments led to a determination of a single particle gap of 1.7 eV for MAPbI3, and 2.3 eV for MAPbBr3, which are on the same order of the values of experimentally determined optical gaps and DFT- computed band gaps as presented earlier.137,145 Ionization energies and electron affinities were 45 determined to IE = 5.4 eV and EA = 3.7 eV for MAPbI3, and IE = 5.9 eV and EA = 3.6 eV for MAPbBr3. Similarly, ultraviolet photoemission spectroscopy was used to determine the IE = 5.2 eV of FAPbI3.147 We will discuss in section B.2.2 that the ionization energy can also depend on the HaP composition and surface termination, which could also cause the difference in IE between MAPbI3 and FAPbI3. Another strategy to determine the band edges involves the fit of the valence band leading edge by a parabolic model. From the case of PbS quantum dots, which exhibit a significant contribution of tail states to the DOS at the band edge, Miller et al. adopted and modified the method by Kraut and calculated the DOS of the PbS valence band (DOSVB) using GW calculations with SOC.143 Formally the DOSVB is then expressed by: with the density of states at the high-symmetry L and Σ points in k-space, A a global scaling factor, b a weighing factor to account for the DOS contribution at the L and Σ points, and g the convolution with a Gaussian function to account for linewidth broadening. The DOS in the respective k points is then approximated in a parabolic model, which can be expressed as DOSVB=𝐴𝐴 (DOSL+𝑏𝑏 DOSΣ)⊗𝑔𝑔, DOSL/Σ=2(𝑚𝑚𝑒𝑒∗)32�(𝐸𝐸−𝐸𝐸VBM)12�, where me * is the electron effective mass at the L or Σ point, E the electron binding energy, and EVBM the energy position of the valence band maximum. A similar parabolic approximation was used by Zhou et al. for a set of photovoltaic materials, i.e. Si, CdTe, and several typical HaPs, to corroborate the low density of states for hybrid organic-inorganic HaPs such as MAPbI3.148 A similar model was also used to fit the VBM from photoemission spectroscopy data of MAPbBr3 single crystals,149 which will be discussed in more detail in section B.3.2. In a combined theoretical and experimental study, Endres and coworkers performed direct and inverse photoemission measurements on a set of HaP thin-films (MAPbI3, MAPbBr3 and CsPbBr3) on top of 46 TiO2/FTO substrates.101 The measured UPS and IPES valence and conduction band spectra of the three compounds were used to fit DFT calculations including SOC, appropriately shifted and scaled to achieve a good alignment of the spectral features over a broad energy range, as depicted in Figure 12. A summary Figure 12 -- Comparison between measured UPS and IPES spectra for approximately 300 nm thick (a,b) MAPbI3, (c,d) MAPbBr3 and (e,f) CsPbBr3 films, grown on TiO2/FTO, and spectra, derived from DFT calculations. The energy scale is referenced to EF = 0 eV, while the intensity is plotted on a linear (a,c,e) and logarithmic (b,d,f) scale, respectively. Major atomic orbital contributions are indicated in the spectra and values for IE, EA and the energy gap were extracted from the measured and fitted band onsets in conjunction with the read-out of the work function φ from the secondary electron cut-off in the UPS measurements (not shown here). Reprinted with the permission from Ref. 101. Copyright 2016 American Chemical Society. 47 of the accurate determination of the band gaps along with the value of the work functions and respective ionization energies and electron affinities are indicated in the figure. The results clearly point out the fact that the valence band maximum is marked by a low DOS. The plot on the semi-logarithmic scale further assists in the visualization of the transport gap between valence and conduction band. This low DOS Figure 13 -- (a) Calculated band structure and DOS of MAPbI3 and the expanded unit cell of a PbI3 - ionic moiety. The MA unit leads to a different overlap in the Pb and I atomic orbitals resulting in a low DOS at the valence band maximum (blue circle in upper panel). The band gaps are underestimated in these LDA- based computations. Reprinted with the permission from Ref. 150. Copyright 2015 American Chemical Society.. (b) Reliable fitting of the low DOS at the VBM, measured in ultraviolet photoemission spectroscopy (UPS), as pictured here for MAPbBr3, requires further evaluation with accurate DFT calculations. Reprinted with the permission from Ref. 101. Copyright 2016 American Chemical Society. 48 hypothesis has been proposed explicitly for MAPbI3, where it is attributed to the strong coupling between the antibonding orbitals made up of Pb 6s and I 5p levels, with a small contribution to the DOS only at the R-point in reciprocal space.150 In contrast, the expanded unit cell of PbI3 - does not exhibit the same type of band dispersion (see figure 13a). The experiments indicate that similar effects prevail for compounds with other HaPs, with different A-site cations and (X) halides HaP. The universality of this finding agrees with further theoretical calculations, which suggest that substitutions of the various ions in the ABX3 structure could well be approximated by an orbital overlap rationalization scheme.151 The coupling of frontier atomic orbitals determines the band structure, thus the effective masses of electrons and holes, and hence charge carrier transport, charge carrier densities, and the limits for hot carrier dynamics in HaPs.148,150 Since the process of a dedicated combined theoretical and experimental assessment is very involved and computationally expensive, reliable approximations to cover the many stoichiometric variations in the HaP composition are highly sought-after. In their orbital overlap approach, Meloni et al. link the evolution of the band gap to the overlap of the atomic orbitals.151 Their approximation can be broken down to a linear correlation between the overlap of the B and X site valence band orbitals and the valence band maximum with respect to the vacuum level, i.e. the ionization energy is correlated to the overlap integral between the B and X atomic valence orbitals. The correlation is poorer for the less localized conduction band orbital overlap and electron affinity. Meloni et al. suggest these correlations to work well for pure Pb- and Sn-based HaP systems, while the usability of the scheme is more limited when dealing with more exotic effects.151 For instance, Hao et al. discuss an anomalous band gap opening in ABX3 structures with B = Pb1-xSnx deviating from Vegard's law.152 They suggest that such a trend in composition-dependent band gap could have similar origins as in Pb1-xSnxTe chalcogenides, for which band inversion and hence a systematic change in the atomic orbital composition of the conduction and valence band has been reported.153 49 Assessments of the band edge energies, ionization energies and electron affinities have been conducted for many HaP compositions relevant to the current technological interests, including further mixed halide systems,154 -- 156 and were summarized in previous review articles.54,157 The above-mentioned difficulty to determine the low-DOS band onsets by common practice fitting procedures has led to significant variations of reported values of the electronic energies, mentioned above. In addition, the composition of the surface is difficult to assess, and non-stoichiometry is expected to lead to variations in the characteristic energy levels and the vacuum level position. In MAPbI3 this could be through variations in the extent of MAI- or PbI2-terminated surfaces. B.2.2. Compositional effects on Ionization energy The most accessible experimental quantity is the ionization energy, and halide excess and deficiency in HaP thin-films has an immediate effect on it. Co-evaporation via a dual-source deposition, with one source for AX and the other for BX'2, enables the fabrication of mixed halide HaP films and affords reasonable control over the stoichiometry and halide content. For films deposited from MAI and PbX2 with X = I, Br, Cl, respectively, incorporation of a significant amount of Br into the mixed compound MAPb(I1-xBrx)3 must be contrasted to the negligible amount of Cl incorporated into MAPb(I1-xClx)3 in a co-evaporation process.154 Hence, in the case of MAPb(I1-xBrx)3 , both band gap and valence band position scale with the mixing ratio between the values for pure MAPbI3 and MAPbBr3, whereas the bandgap and VBM position in the nominal MAPb(I1-xClx)3 films correspond to those of a MAPbI3 film. This is in good agreement with the measured bandgap and IE of solution-processed MAPb(I1-xClx)3 films, for which, the de facto Cl content is negligible.145 The analysis of films processed by vacuum deposition reveals another important interdependence. As the ratio between MAI and PbX2 evaporation rates in a co-evaporation experiment tailors the resultant film 50 stoichiometry, one can sample the surface composition from an MAI-rich surface to a PbI2-rich one, which corresponds to the theoretical exploration of film formation as function of the chemical potentials of the individual components in the binary compounds.25 The trend in the characteristic energy levels is the same for all three compositional gradients, MAPbI3, MAPb(I1-xBrx)3 and MAPb(I1-xClx)3, i.e., IE and EA both decrease with excess MAI and hence an MA+ rich sample (see Figure 14a). In an expanded experimental series, Emara et al. demonstrated for a large set of samples and sample processing procedures that the value of IE in MAPbI3 is correlated to the experimentally determined elemental Pb to N ratio, which should Figure 14 -- a) Measured IE and projected EA (using the optical gap) as a function of MAI to PbX2 excess for MAPbI3, MAPb(I1-xBrx)3 and MAPb(I1-xClx)3 thin films. Reproduced from Ref. 154 with permission from the PCCP Owner Societies. b) Measured IE as a function of elemental Pb to N ratio for MAPbI3 films from various fabrication procedures. Reprinted wih the permission from Ref. 144. Copyright 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 51 reflect the PbI2 / MAI ratio.144 The plot in figure 14b confirms that the measured values for IE are maximal in the region of PbI2 excess and decrease proportionally with an increasing MAI component. Notably, no peak of PbI2 is found in X-ray diffraction (XRD) measurements even in the high PbI2 excess regime, which suggest that the excess PbI2 is poorly crystalline or does not segregate into large continuous crystallites. This finding leads to the assumption, that even in the high PbI2 excess regime, the films resemble defective MAPbI3. Hence, the measured stoichiometry and the correlation with IE could be confined to the surface region that is probed by PES. In addition to the changed IE, the valence band structure changes with changing MAI/PbI2 mixing ratio. Most prominently, the intensity of the VB leading edge is modulated, which is consistent with a different coordination of the valence electrons and hence average Pb-I bond properties. However, in the case discussed above, no linear correlation is observed between the MAI/PbI2 ratio and the corresponding valence band peak intensity; possibly dedicated DFT calculations, which would need to sample a large range of disorder, can help shed light on what is/are the physical causes for these behaviors. B.2.3. Defect tolerance and the effects of radiation damage At this point a question arises as to how to reconcile the proposed defect tolerance and experimentally detected self-healing capabilities of HaPs with the large variation in IE as a function of compositional parameters between mostly PbI2- or MAI-terminated MAPbI3 surfaces. While we see IE and EA as key parameters for estimating the electronic energy level alignment and formation/presence of an energetic barrier at the interfaces, the intrinsic electronic properties of the perovskite alone, i.e. charge carrier transport and recombination, depend more on the modulation of the bulk defect state density and associated shifts of EF in the gap. However, the surface defect state density and density of interface states 52 become important quantities for the estimation of recombination currents which constitute a main loss factor for photovoltaic performance. The evolution of defective MAPbI3 (surfaces) and threshold for substantive switching of its electronic properties can be tracked in an experiment, that exploits the limited radiation hardness of HaP compounds. Several early reports indicated that HaP films decompose under harsh radiation conditions: for instance, metallic lead species emerge in the form of nanocrystals in MAPbI3 films upon exposure of the film to X-ray radiation. The effect is due to radiolysis as evidenced for PbX2 compounds already, and limited thermal stability of hybrid HaPs, from which the organic unit A is readily evaporated either as AX or 2A + X2.158 -- 161 In an XPS experiment one can hence track the decomposition process of HaP as the material is exposed to X-ray radiation used as excitation for photoemission. In MAPbI3 the loss of MAI occurs at appreciable rates at a temperature of around 225°C under atmospheric pressure. Thus, evaporation of MAI happens at even lower temperatures under ultra-high vacuum conditions, under which the XPS experiment is usually conducted.162 Steirer et al. performed continuous XPS measurements on a solution-processed MAPbI3 film over the course of 42 h.33 An Avrami phase-change analysis163 of the decay in the nitrogen signal yielded a single exponent, indicating that the loss of MA follows first-order kinetics, i.e. a steady loss rate of MA species under X-ray exposure in vacuum. The evolution of the nitrogen signal also indicated that, while the MA contribution is decreasing, small amounts of at least two other nitrogen species emerged at slightly lower binding energies. No clear chemical attribution of the peaks was provided in the study, but a likely explanation for these nitrogen components is the formation of molecular fragments of a broken-down MA moiety, which is not further specified in the report but could for instance be adsorbed CH3NH2. During exposure, the iodine content was also shown to drop at the same rate as that of nitrogen, consistent with the loss of MAI and hence suggesting a continuous decomposition of MAPbI3 towards PbI2. Surprisingly, the position of the valence band with respect to EF was not found to change until an I/Pb ratio of 2.5 was 53 reached (see Figure 15). The origin of this effect lies in the depletion of MAI, which leads to the creation of MA and I vacancy pairs (Schottky defects in purely ionic crystals). This picture is in good agreement with the theoretical description by Yin et al., who locates these defect states close to the conduction and valence band edges, respectively.25 The defect pairs are self-compensating and hence do not affect the Figure 15 -- Decomposition of MAPbI3 film on a TiO2 substrate under continuous X-irradiation. (a) decrease of I / Pb ratio with X-ray exposure time. (b) Apparent shift of the leading edge to the valence band maximum as a function of I/Pb ratio. (c) Measured valence band spectra and fits, generated a superposition of the MAPbI3 and PbI2 valence band spectra. Reprinted with the permission from Ref. 33. Copyright 2016 American Chemical Society. 54 Fermi level position in the gap or the free carrier density in the material. Only after the I/Pb ratio drops below the threshold value of 2.5 does a PbI2 phase precipitate with significant effect on the electronic properties of the material. The upshift of the Fermi level in the gap can be explained by two concomitant processes. While MAPbI3 deposited on top of n-type TiO2 surfaces is n-type as usually reported for HaP films deposited on TiO2 (further discussion in section C1),145 EF is generally found near mid-gap in the PbI2 phase (BG = 2.3 eV). Thus, the steady formation of PbI2 over time will lead to a continuous shift of the leading edge and change in the shape, of the valence band spectrum, which can be reproduced by a superposition of spectra from the initial MAPbI3 valence band and from pure PbI2, as depicted in figure 15c. The process is consistent with an analogous evolution of isosbestic points in the Pb and I core level spectra.33 In contrast to earlier reports,161 no metallic lead (Pb0) species were formed, even after 42 h of continuous X-ray exposure in vacuum. Instead, the process culminated in the complete transformation of the MAPbI3 film into PbI2 under the the X-ray spot (see Figure 16a). In this case, the tendency of the MAPbI3 film to radiolyse with precipitation of Pb0 clusters was inhibited by empirical adjustments of the film preparation methods.33 In a different example (and for a different HaP sample composition), even in vacuo exposure to white light illumination of an MAPbI3-xClx thin-film fabricated at low temperature resulted in a considerable increase in Pb0 content with significant consequences for the optoelectronic properties of the material.164 The concentration of Pb0 species is largest at the surface, where Pb atoms could even form a metallic film giving rise to a clearly distinguishable Fermi edge from the Pb 6p electrons (see figure 16). The metallic species act as donor defects and thus effectively as trap states on the HaP surface. As a result, EF is pinned to the conduction band minimum in the case of high density of Pb0 defects. Similar results on this process have been acquired before in an accelerated degradation study, in which XPS measurements were taken on a laser irradiated spot (λ = 408 nm, 1000 W/m2) on a MAPbI3 thin-film.165 55 In conclusion, HaPs demonstrate what can be interpreted as remarkable defect tolerance, i.e. an invariance of key energetic parameters such as the position of EF in the gap, upon the creation of shallow defect pairs (methylamine and iodine vacancies). Nonetheless, metallic defects can pin the Fermi level, potentially act as recombination centers and ultimately affect the energy level alignment process at interfaces with adjacent functional layers. The formation of such defects can be provoked by irradiation and might be substantially accelerated in vacuum conditions. In the presence of oxygen, the zero-valent Pb will be oxidized and, apparently the resulting Pb-O has a surface passivating effect, the nature of which has not yet been elucidated. Further reading on the implications on measurement conditions can be found in literature reports.159,160 Figure 16 -- (a) XPS Pb 4f7/2 core level spectra of an MAPbI3 thin-film; initially and after 42 h of X-ray exposure in vacuum, which effectively led to the degradation of the layer to PbI2, with no significant formation of Pb0. Reprint from ref 33. (b,c) PES spectra of MAPbI3-xClx film after extended in vacuo illumination with white light bias. (b) XPS Pb 4f core level spectra showing a substantial amount of Pb0 forming a metallic overlayer (c) UPS spectra indicating a distinctive DOS contribution at EF. Reprinted wih the permission from Ref. 164. Copyright 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 56 B.3. HaP single crystals Further refinement of HaP surface characterization requires a closer look at the sample quality. In this regard, single crystalline specimens fulfill two important roles: first, they can provide high material purity; second, they offer structural order on a macroscopic scale, which allows to extract additional details for the electronic structure determination. Since structural order and defined orientation in real space translates into reciprocal space, PES experiments taken under varying emission angles (angle-resolved photoemission spectroscopy: ARPES) and excitation energies can be used to map out the band structure, and dispersion, E-k, relations, of the material. Vacuum-cleaved surfaces of HaP single crystals can serve as a prototypical system with minimal influence of extrinsic defects. Due to the ease of, and recent advances in HaP single crystal synthesis,166,167 high quality samples have become available as testing platforms to assess intrinsic optoelectronic properties of HaPs. The growth methods, used today, can be grouped into four different categories: solution temperature-lowering, inverse temperature crystallization, anti-solvent vapor-assisted crystallization, and melt crystallization.167 A potentially important difference between the first three, especially the second and third, and the last method is the ability to grow MAPI crystals below the tetragonal to cubic phase transition. For many HaP systems, such as MAPbI3 or MAPbBr3, millimeter-sized specimens of high purity and crystalline quality can be grown within a matter of days.168 This allows for a particularly fast route to perform surface characterization studies and has been exploited to study luminescence and electronic transport phenomena. For instance, MAPbX3 single crystals exhibit very low trap state densities on the order of 109 to 1010 cm−3 and long charge carrier diffusion lengths on the order of 10's of micrometers.169 In the case of a MAPbI3 single crystal, Dong and coworkers claimed electron and hole drift/diffusion lengths on the order of 100's of micrometers,170 but the interpretations of the data to arrive at such numbers has been criticized.171 57 However, the long carrier lifetimes compared to the already respectable ones in polycrystalline thin films suggest that surface recombination in single crystals can be effectively suppressed. With respect to surface characterization, we can hence assume the cleaved crystal as close to pristine, with a minimally perturbed surface, and gain insight into the surface termination that results in such. For the various surface planes, the electronic band dispersion is then determined by ARPES experiments. In the following section, we discuss this approach and procedure for MAPbI3 single crystals and demonstrate, that measurements can be used to explore some of the hallmark materials properties in HaPs such as the giant Rashba splitting in MAPbBr3.149,172 B.3.1. Band dispersion by angle-resolved photoemission spectroscopy in MAPbI3 The first hypothesis, i.e. to obtain a pristine surface by cleaving, is not necessarily easy to fulfill; Zu et al. took XPS and UPS measurements of a MAPbI3 single crystal, grown by seed-induced nucleation and cleaved in dry N2 prior to introduction in an ultra-high vacuum analysis chamber for PES.164 In contrast to MAPbI3 thin film, investigated in parallel, the crystal surface exhibited a significant density of Pb0 species, that pinned EF to the conduction band minimum, prior to any illumination (apart from the X-ray and UV for the PES analyses) was used. A possible explanation for this finding is rooted in the abrupt surface termination resulting from the cleaving process, which can lead to an iodine-deficient surface. Another explanation takes into consideration the fact that, depending on the preparation methods and conditions, HaP crystals can exhibit very different levels of material purity and crystalline quality, even though, based on visual inspection and basic X-ray diffraction experiments, they are indistinguishable from pure single crystals. Compared to MAPbBr3, the sample and surface preparation process is particularly challenging for MAPbI3 and can lead to specimens with defects and solvent remnants. Thus, the evaluation of single 58 crystal PES data must be done with caution, by keeping track of, and reporting potential variations in sample preparation methods and, hence, crystal quality. Lee and coworkers produced a MAPbI3 single crystal by solvent evaporation from a GBL solution with equivalent parts of PbI2 and MAI.172 The resultant crystal was mm-sized and its single crystal character was verified by synchrotron-based X-ray diffraction measurements. In the diffraction pattern the tetragonal phase of the crystal (held at 200 K) was identified by distinct diffraction spots in the (h0l) and (0kl) planes. Subsequently, the electronic structure and band dispersion was determined by ARPES measurements, also using synchrotron excitation. In Lee et al.'s measurements, a variation of the photon energy corresponds to a change in ky, perpendicular to the sample surface (see Figure 17a) and is chosen such that the high symmetry planes in the Brillouin zone (BZ) can be identified. The periodicity with large k values in the ky scans suggest a cubic structure instead of the tetragonal low temperature phase of MAPbI3, which could have persisted due to the fact that the crystal was grown at 100 °C, i.e. above the cubic-to-tetragonal phase transition temperature (∼ 56 °C at ambient pressure). Constant energy cuts in the ΓMX plane as depicted in figure 17c-f mark where the electronic bands intersect the high symmetry points of the cubic BZ. In the final step the dispersion relations are measured for a constant photon energy as plotted in figure 17g-i along the MΓM direction. As a first result, the ARPES measurements reveal little band dispersion in MAPbI3. While the general position of the band agrees with the theoretical calculations, the measured bands appear broader and are dominated by a non-dispersive background. These findings have a significant impact on the assumed optical transition and transport in MAPbI3 since the bandwidths experimentally determined by Lee et al. are smaller than commonly calculated, which implies a lower transfer integral between the atomic sites and point to higher effective masses than expected by them.172 At this point, the reader is reminded of the low DOS at the band edges in MAPbI3, which presumably originates from the R point in k-space.150 This contribution to the DOS is already hardly observable in angle-integrated PES experiments,101 and the ARPES experiment presented here would explicitly be 59 "blind" to this direction of the band progression due to the chosen crystal orientation and measurement geometry. Finally, the influence of defect states and disorder in the surface layer cannot be excluded, which could be associated to beam damage, impurities in the MAPbI3 crystal surface or a mixed tetragonal-cubic sample. Figure 17 -- (a,b) Cubic BZ and band structure assumed for the MAPbI3 single crystal with constant energy cuts of the electronic structure in the ΓXM plane at binding energies corresponding to (c) 0 meV, (d) 300 meV, (e) 2440 meV and (f) 2840 meV with respect to the VBM. Stars in each cut indicate the intersection of the bands with the cut planes. (g)Measured band dispersion along the MΓM direction (hv = 142 eV), and (h) second derivative of the data.(i) Superposition of data from (h) with calculated band dispersion. Reprinted figure with permission from Ref. 172. Copyright 2017 by the American Physical Society. 60 However, Yang et al. independently performed ARUPS measurements of a MAPbI3 single crystal. On the same sample, LEED measurements confirm the cubic phase and a small signal of diffraction spots from a presumably incomplete tetragonal phase, which becomes brighter when the crystal is cooled to lower temperatures.173 In contrast to the excitation energy in the study of Lee et al. (74 eV < ħω <200 eV)172 Yang et al. used a He I excitation source (21.22 eV), which yields higher photoionization cross-sections for the frontier molecular orbitals and revealed the expected pronounced dispersion relation. They reported effective masses of holes (mh / m0, with the free-electron mass m0) of 0.35 ± 0.15 and 0.24 ± 0.10 along the Γ-X and Γ-M directions in the Brillouin zone, which corresponds well to the theoretical calculations (mh / m0 = 0.2 -- 0.25, respectively).173 B.3.2. MAPbBr3 and mixed HaP single crystals We now turn to the investigations of other HaP single crystals than MAPbI3 to demonstrate, that such studies not only reveal atomistic quantities required to describe charge carrier transport, but could also assist in evaluating fundamental physical mechanisms such as Rashba-splitting. An initial attempt at visualizing the band dispersion in MAPbBr3 was reported from a laboratory source- based UPS measurement. The data were acquired at sample-to-analyzer take-off angles θ between 0 and 28.5° to map k‖ along the ΓX and ΓM directions in the BZ of the cubic lattice.174 The valence band features were coarsely fitted with Gaussian functions and attributed to individual bands, for which the shifts of the centroid peak positions serve as a measured approximation of the band dispersions along the respective k‖ values, with ℎ𝑘𝑘‖=[2𝑚𝑚(ℏ𝜔𝜔− Φ− 𝐸𝐸𝐵𝐵)]12� sin𝜃𝜃, where Φ is the work function, ℏ𝜔𝜔 the excitation energy, EB the binding energy; here we assume a lifetime- broadened free electron-like final state dispersion.175 From this measurement the lower limit of the 61 effective mass of holes is derived as the inverse of the curvature at the valence band maximum which yields a mobility of µh > 33.90 cm2V-1s-1 for the MAPbBr3 single crystal, compatible to values determined in optical and electrical measurements.169,176 Komesu et al. performed synchrotron-based ARPES measurements of MAPbBr3 single crystals and compared the results to those from electronic structure calculations at the DFT level, to yield a refined exploration of the band dispersion.177 ARPES measurements were performed of the (001) surface of a cm-sized MAPbBr3 crystal, as depicted in Figure 18a, and compared to the calculated band structure along the Γ−M direction of a MAPbBr3 surface Brillouin zone with either MABr or PbBr2 surface termination. Beside a strong non-dispersive contribution at 3 eV below EF, which is particularly intense at the Γ point, a dispersive band with a much lower intensity range, was seen up to 1.8 eV below EF at the M point. Komesu et al. attribute this band to a mixed bulk Br 4p and Pb 6s orbital in line with independent calculations, which also show minor contributions of the Pb 6p orbitals to the valence band.101 Two main observations are made for this set of experiments: First, the MABr surface termination leads to a better fit of the experimental data than the PbBr2 termination. This is in line with earlier reports of a preferential MABr (or more generally AX)-terminated surface for MAPbX3 compounds. Second, with the valence band located at 1.8 eV below EF, the crystal appears n-doped, in good agreement with combined PES/IPES measurements of MAPbBr3 thin-films on top of TiO2 substrates.145 Here, Komesu et al. suggest that the n-type doping behavior originates from a self-doping mechanism of the halide-deficient surface (in the ionic point defect model VI is a donor defect) and to metallic lead (Pb0) species, similar to the case of the cleaved MAPbI3 crystal. We note that Pb0 can charge balance charged VI defects. Notably, the inclusion of SOC in the DFT calculations led to changes for the band dispersion and positions, on the order of 10s of meV.177 62 In a separate study, Niesner et al. demonstrated that ARPES on a MAPbBr3 single crystal can aid in elucidating strong prevalent relativistic effects in cubic HaP compounds.149 First, they showed that the phase transition from the orthorhombic (low temperature) to the cubic phase (room temperature) directly impacts the surface electronic structure and is clearly visible in the symmetry Figure 18 -- Electronic band structure of the (001) surface of MAPbBr3. (a) ARPES data acquired at a photon energy of 34 eV. (b,c) Calculated band structure with MABr (b) and PbBr2 surface termination (c) along the Γ−M direction. Surface states are indicated in red and bulk states in light grey in (b) and (c). Reprinted with the permission from Ref. 177. Copyright 2016 American Chemical Society. (d-g) ARPES data from the low- temperature temperature orthorhombic (d,f) and the room-temperature cubic (e,g) phase. (d,e) VBM region of the ARPES spectra at the centers (Γ) and the corners Mo and Mc of the orthorhombic and the cubic surface BZ (shown in inset), respectively.(f,g) Constant energy cut through the VB as a function of parallel momentum. Reprinted figure with permission from Ref. 149. Copyright 2016 by the American Physical Society. 63 of the isoenergetic cuts through the BZ (see Figure 18). The VBM is fitted by a parabolic model to account for the low DOS.101,143 Second, the valence band scans revealed an absence of energy levels at mid-gap, suggesting low densities of surface trap and/or recombination states, which is consistent with the determination of (shallow) bulk defects in MAPbBr3 by Laplace deep level transient spectroscopy (DLTS).178 Furthermore, the symmetry observed from the isoenergetic cuts in both phases, room temperature cubic and low temperature orthorhombic, suggests that no long-range surface reconstruction occurs. This local surface structure has been confirmed in a dedicated STM experiment of an MAPbBr3 single crystal, where Ohmann et al. reported a non-centrosymmetric zigzag (ferroelectric) and centrosymmetric dimer (antiferroelectric) arrangement of the Br anions in the top-most MABr-terminated layer.179 The non-centrosymmetric pattern exhibits a smaller band gap and, hence, Niesner et al. suggest that this scenario matches best their measured band onset and assume it to be the predominant surface termination.149 In the next step, Niesner et al. used their laser-based ARPES experiment with circular polarized light (ħω = 6.2 eV) to reveal a pronounced dichroism map, i.e. the difference (σ+ - σ-) photoemission intensity from the VB under excitation by right- and left-handed circularly polarized light, respectively. The split bands resemble parabolas off-set in k-space by a Rashba parameter α, and can be expressed in a quasi- free electron picture with the energy dispersion relation 𝐸𝐸±=ℏ𝑘𝑘22𝑚𝑚ℎ∗± 𝛼𝛼𝑘𝑘. While the limited experimental resolution did not allow for the extraction of the effective mass mh, α was determined as 7 ± 1 eVÅ for the orthorhombic and 11 ± 4 eVÅ for the cubic phases, respectively. This is at the higher end of the range of predicted SOC effects in HaPs,124 and corresponds to an offset of the VBM by k‖ = 0.043 Å-1 giving rise to a substructure of the top of the valence band and a local minimum at the high symmetry points 0.16 and 0.24 eV below the VBM for the orthorhombic and cubic phases, 64 respectively. The exact origin of this surprisingly large effect is hard to pinpoint; in contrast, a separate study gives a detailed theoretical inspection of the effect of the 2 x 2 surface reconstruction (zigzag and dimer) in MAPbBr3 and predicts only a slight Rashba effect one order of magnitude smaller than the values measured in Niesner's experiment.102 Hence, point and step-edge defects or mesoscale polar reconstruction rather than the dimer surface reconstruction could be the root cause of the observed Rashba splitting. Irrespective of these uncertainties of the SOC-induced phenomena, the example demonstrates that the HaP surface can denote a complex energetic landscape. However, further corroborating measurements are needed to arrive at a comprehensive picture and quantify the impact of the measured effect on a device-relevant situation, i.e., at an interface instead of a surface under ultra- high vacuum conditions. We conclude the section on HaP single crystals by noting that the measurement of band dispersion yields an important data point for the determination of macroscopic transport properties, but is only a first step to determine charge carrier dynamics at the interface. It is in the nature of the experiments that the measurement conditions are quite unique and strictly picture only the exposed surface in UHV, while the formation of an interface -- as it is the case in a device -- would disrupt those conditions. In addition, the effect of alloying and phase segregation in multi-cation or mixed halide perovskites is very relevant to HaP-based semiconductor devices. Yet, aside from the examples presented for MAPbI3 and MAPbBr3 single crystals, to date no detailed experimental and theoretical studies exist for HaPs single crystals with mixed A, B and/or X species in the ABX3 compound. However, recent reports demonstrate a successful synthesis of mixed HaP single crystals,167 which bring the exploration of band dispersion for additional systems within reach. Particularly, the readily available fabrication route to mixed halide HaP single crystals has the potential to lay bare their dominant surface termination and preferential surface cell composition.180 65 C. Interfaces to adjacent functional layers After having discussed the electronic properties of the HaP surface and the interaction between the exposed surface and isolated adsorbates, e.g. prototypical organic molecules and oxygen species in section B.1.2., we turn to the fully assembled interfaces between HaP semiconductors and functional layers. As in the other sections of this review, the focus remains on energy level alignment and electronic properties at the interface. We recognize that the range of HaP compositions is large, in particular when considering the compositional variants that originate with different sample preparation methods and lead to different surface terminations. Still, mostly the family of methylammonium lead halide (MAPbX3) compounds has been explored in detail by surface science methods, and only few data points exist for the wide range of HaPs that are not based on methylammonium and lead. The compositional space of HaPs is then considerably multiplied for interfaces with transport/passivation layer. We give here a broad survey of the various potential HaP/layer combinations, but pick the most relevant ones to derive what we consider to be the most prevalent interaction phenomena. The main goal of this exercise is to present the many electronic level alignment processes and connect these to the role of the interface,16,54,157,181 as it is becoming increasingly clear that the interfaces dominate PV device performance of HaP-based cells.55 -- 57 Interfaces of HaPs can generally be categorized into two subdivisions, which differ from each other by their formation mechanisms as well as accessibility in surface science experiments: • The buried interface between substrate and HaP layer that is deposited on top of the substrate (often called "bottom" interface) • The interface between HaP layer and transport/passivation layer that is deposited on top of the HaP (often called "top" interface) 66 The formation processes of these two types of interfaces are fundamentally different and hence the resulting interfacial electronic alignment and prevalent defect structure are expected to be different as well. In the first case, i.e. the bottom substrate/HaP interface, a solid substrate sets the foundation for the HaP film formation. Hence, the substrate and the conditions under which it is held (e.g. temperature, -OH surface termination) template the growth, morphology and structure of the HaP layer,182,183 which can have wide-ranging implications for device operation.184 In terms of film morphology, the reader is referred to a review by Saparov and Mitzi for details on the adoption of various growth modes of HaP thin films and the correlation with the performance of photovoltaic and other HaP-based semiconductor devices.185 Importantly, the substrate surface interacts with the precursor solution and determines the chemical environment, thermodynamic driving force and formation kinetics for the HaP precursor phase.186,187 In the final product, the solid layer on the substrate, the structural properties and energetics of the film at the immediate interface could be significantly different from those of the bulk or the exposed surface. In the case of the top interface, i.e. the HaP layer with a coating deposited on top, the solid HaP layer is already formed and can be assumed to be in (at least thermal) equilibrium, which to a first approximation allows to discard any effects due to a precursor phase. However, depending on the deposition conditions of the coating, the HaP film can undergo structural and chemical, and resulting energetic rearrangement, e.g. due to non-orthogonal solvents or reactive overlayer materials. Again, in this scenario the electronic properties of the HaP film at the interface would differ from those of the bulk or of the originally exposed HaP surface. Thus, while understanding of the exposed surface is an important starting point to rationalize potential chemical reactions with the coating, for instance through excess MAI or Pb0 as effective reactants,188 -- 190 its energy levels may well differ from those, relevant for (top) interface energy level alignment. 67 We note that the resulting HaP film-interface systems are usually not in thermodynamic equilibrium. The non-negligible mobility of ions in the HaP film can lead to structural and compositional changes, which can be particularly pronounced at interfaces and strongly impact the energy level alignment at, and electronic transport properties across these boundary regions, especially if the material that contacts the HaP can accept halide ions (e.g., polymers). For example, many reports discuss interface halide depletion or enrichment as a result of light or electrical bias-induced ion migration in HaP.71,191,192 Even though these transient effects are difficult to capture and quantify in many of the surface science experiments presented here, they clearly affect the operation, and at times the degradation behavior, of HaP-based devices. The exact role of ion migration on the stability and I-V hysteresis in PSCs, and especially in top- performing ones, remains a challenging academic question and technological conundrum.70,73 C.1. Substrate typology and interactions with HaP thin-films Conventional PSC device architecture: A straightforward way for the determination of the most relevant substrate typologies is to look back at the application that led to the recent breakthrough and surge in HaP research: the perovskite solar cell. At first, PSCs were thought of as dye-sensitized solar cells (DSSC) with the halide perovskite as the dye, first in an electrolyte-based architecture6 and then in the more stable solid-state DSSC.8,193 In both cases the substrate configuration comprised a transparent conductive oxide (TCO)-covered glass slide, covered with a mesoporous titanium oxide film acting as an electron transport layer. The HaP/substrate interface was therefore between the n-doped TiO2 and the HaP. Interestingly, the mesoporous TiO2 films, which were infiltrated with the perovskite light absorber, could be substituted by insulating mesoporous oxides (e.g. Al2O3) or be omitted altogether to form a planar heterojunction without (much) decreasing the PV device performance.8,194 This finding demonstrated that the HaP film in the device configuration would 68 facilitate ambipolar transport, unlike the commonly applied dyes in DSSCs. However, in all these scenarios, the bottom electron transport layer (ETL) for charge extraction in contact with the light absorber film was still n-doped TiO2 (also in case of the mesoporous Al2O3). Eventually, the device would be completed by the deposition of a hole transport layer (HTL) -- usually an organic semiconductor -- on top of the HaP film, followed by the subsequent deposition of a metal top anode, which we will discuss in a later section. Much effort has been spent to substitute the bottom TiO2 oxide in this configuration using other oxides (ZnO, ZnO:Al, SnO2), other inorganic compound semiconductors like CdS or organic ETLs.54,195,196 The requirements for the ETL layer are stringent and can be summarized as follows: (i) compactness without pinholes, to prevent leakage currents between HaP layer and the TCO cathode; Figure 19 -- Substrate choices for various HaP -based PSC configurations. (a) Conventional cell stack with mesoporous oxide and ETL as substrate. (b) Planar configuration with oxide ETL. (c) "Inverted" device architecture with mesoporous p-type oxide HTL substrate. (d) Inverted planar structure with organic HTL substrate. Graphic, courtesy of C. Dindault. 69 (ii) good optical transmittance, i.e., wide band gap and minimal reflectivity over the solar spectrum range, to minimize optical losses of incoming light (also needed for light outcoupling in LED devices), (iii) high electrical conductivity to minimize electrical losses for charge carrier transport in the layer, (iv) energy level alignment, particularly vacuum level and conduction band minimum for minimal energy loss and efficient electronic coupling to, and hence charge transfer to the adjacent HaP film. This latter point, i.e. the energy level alignment between ETL and HaP, is difficult to assess as the suitability of the ETL/HaP pairing does not systematically derive from the equilibrium positions of the respective energy levels in the separate phases. While the absence of an ETL layer between HaP film and TCO cathode is detrimental to the solar cell device characteristics due to the aforementioned hole leakage currents and recombination losses, not every nominally charge-selective contact can be used for efficient electron extraction and hence improved device functionality. Comparing TiO2 and ZnO, both ETL materials generally enable reasonably high initial power conversion efficiencies, whereas CdS, which exhibits similar charge selectivity promoting electron extraction, leads to a significantly reduced device efficiency.195 The reason is its lower band gap (than TiO2 and ZnO) resulting in significant light absorption, which does not contribute to the generated photocurrent, as becomes apparent in incident photon-to-electron conversion efficiency (IPCE) measurements. In addition to the effects of energy level alignment, chemical reactions upon formation of the interface or under device operation play a major role in the integrity of the interface and their study requires dedicated analyses. With a ZnO ETL layer, the stability of the top HaP film is significantly reduced compared to that of an HaP film deposited on TiO2. This instability is generally ascribed to the higher acidity of the ZnO surface, but the stability of the ZnO/HaP system can be improved by annealing of the ZnO film in air prior to HaP deposition or even more rigorously by adding Al as a dopant in ZnO (ZnO:Al, AZO, also used in CIGS PSCs).197 70 Suppressing chemical reactions at the oxide/HaP interface has been attempted and enabled by either a hybrid typology, where the bottom oxide layer is capped with an organic self-assembled monolayer (e.g. PC60BM) on top of the TiO2 ETL,198 or by using a more inert organic ETL altogether.199 This latter approach features the additional advantage that an organic ETL on the bottom interface would more easily allow for integrating HaP layers into layer architectures for flexible devices. Moreover, the choice of the ETL has a direct effect on charge transfer from or to the HaP layer and consequently charge transport in the adjacent HaP film itself. Often the current-voltage measurements of HaP-based solar cells exhibit a transient behavior (or hysteresis effect).200 This effect has been attributed to various mechanisms, such as ion migration in the HaP film, (re-)polarization of ferroelectric domains in the HaP film, the build-up of space charge regions at the interfaces with charge transport layers (or trap- filling or emptying at these interfaces), or a combination of these cases. Due to the dominant time scale of this effect (in the range of few seconds) as well as its sensitivity to the contact materials, the most prevalent scenario is the formation of space charges at interfaces occurring with the photogeneration of charge carriers in the HaP bulk, both through purely capacitive effects and ion migration.68,201,202 While neither the thick PCBM-only ETL nor most TiO2 ETLs produce hysteresis-free PSCs, the thin PCBM modification of a compact TiO2 ETL succeeds in making the interface less prone to charge accumulation and hence polarization.203 Therefore, the correct choice of the ETL, its chemical inertness, and the respective energetic alignment to the HaP are prerequisites to minimize transient behavior and capacitive effects in HaP-based semiconductor devices.204 Inverted PSC device architecture: An alternative configuration to the conventional n-i-p layer stack for the PSC layout is derived from the most common cell p-n architecture in conventional organic photovoltaic devices.205 In an "inverted" p-i-n 71 structure, the perovskite film is deposited on top of a p-type hole conductor, which can be a planar oxide layer such as NiOx or V2O5, or a hole-conducting layer of small molecules or polymers (e.g. PEDOT:PSS). An organic electron transport layer based on fullerene compounds (C60, PCBM) or bathocuproine (BCP) deposited on top of the perovskite absorber followed by a metal cathode generally completes the device stack. Initial inverted PSC devices based on a PEDOT:PSS bottom electrode yielded respectable power conversion efficiencies on the order of 6%, while the analogous devices comprising planar metal oxide hole conductors as a bottom HTL fell short of achieving high PCEs despite all interface systems resulting in similar PL quenching efficiencies.205 A related approach is to combine the layer sequence (p-i-n) with film fabrication routines that are applied in the DSSC production scheme, one of the parent technologies for HaP-based PSCs. Mesoporous p-type metal oxide layer (e.g. mesoporous NiOx) then emulate the scaffolded morphology of the DSSC while maintaining the direction of hole extraction from the HaP absorber layer into a bottom HTL.206,207 The same requirements established for the ETL substrates in the conventional PSC apply to the development of improved or modified bottom hole transport layers: (i) improved structural integrity, (ii) optical properties that assist in- and out-coupling of photons in the device, (iii) chemical inertness and electronic properties that enable trap passivation and efficient charge transfer. In particular, the electronic properties of these bottom HTLs have been improved, based on surface treatments and variations in the doping level, which eventually led to inverted PSCs with PCEs around 20%.204,208 -- 210 Impact of substrate on charge carrier profile in the layer stack: In this context the most pressing question remaining for all the various substrate typologies is how the substrate/HaP interface impacts the profile of mobile charge carriers (electrons and ions) in equilibrium condition, but more importantly under device operation with either electrical bias in the dark, or under 72 illumination. Alternatively, the issue boils down to understanding to what degree the response of the carrier distribution in the HaP film is modulated by its interfaces with adjacent layers (here: the substrate), with an external perturbation such as photons or an electric field. A sensitive way to visualize and measure the charge carrier distribution in the layer stack is given by cross-sectional Kelvin probe force microscopy (KPFM) on a cross-section of the layer stack obtained by cleaving, ion milling, and/or polishing, bearing in mind the damage (changes from the pristine state) that forming the cross-section can cause. The cross section is then analyzed via scanning force microscopy. Aside from AFM-derived topographical images, KPFM provides a spatially-resolved measure of the contact potential difference (CPD), that is the difference between the work functions of the probe tip, Φtip(x), and the sample surface with electrostatic potential VE(x). The electrical field E(x) across the layer stack is then given by the spatial derivative of the CPD by −𝑑𝑑𝑑𝑑𝑑𝑑CPD(𝑑𝑑)= −𝑑𝑑𝑑𝑑𝑑𝑑�𝑉𝑉𝐸𝐸(𝑑𝑑)− 1𝑒𝑒 Φ𝑖𝑖𝑖𝑖𝑡𝑡(𝑑𝑑)�= −𝑑𝑑𝑑𝑑𝑑𝑑𝑉𝑉𝐸𝐸(𝑑𝑑)=𝐸𝐸(𝑑𝑑). Under the assumptions that, (a) the field in the bulk does not deviate strongly from the field at the surface of the exposed cross section and (b) sample preparation leads to negligible changes of the surface (where cleaving is the method with the highest probability for this) we can extract the progression of the electron electrochemical potential (=WF) and hence charge distribution, ρ(x), of resident and photogenerated charges in the device, according to Poisson's equation 𝜌𝜌(𝑑𝑑)= −𝜀𝜀𝑟𝑟𝜀𝜀0𝑑𝑑𝑑𝑑𝑑𝑑𝐸𝐸(𝑑𝑑)= −𝜀𝜀𝑟𝑟𝜀𝜀0𝑑𝑑2𝑑𝑑2𝑑𝑑𝑉𝑉𝐸𝐸(𝑑𝑑), where ε0 is the vacuum permittivity and εr the local dielectric constant of the probed material. While the latter 's value is not agreed on, this will not affect the spatial variation, but only the absolute value of ρ. 73 With this type of analysis, the cross-section of a standard glass/FTO/c-TiO2/mp-TiO2/MAPbI3/Spiro- MeOTAD/Au (n-i-p) device layer stack (figure 20a) reveals that, under illumination, the electrical field distribution points to unbalanced charge-carrier extraction under short-circuit conditions. In the case depicted in Figure 20, one can distinguish between two regions in the active HaP (MAPbI3) absorber layer: a region of HaP-infiltrated mp-TiO2 and a bulk HaP capping layer on top. However, the main issue arises from the HTL rather than the substrate layer: during illumination holes accumulate in the layer and lead to a potential barrier for charge carrier extraction.211 We note that KPFM measurements can be ambiguous when it comes to defining whether a junction is p-n or p-i-n, which depends on the density of dopants and free carriers in the layers. For instance the results from Jiang et al. suggest a scenario that slightly deviates from an immediate p-n junction at the TiO2/MAPbI3 interface.212 However, Bergmann et al.'s finding agrees with earlier electron beam-induced current (EBIC) measurements, which point to a higher electron extraction efficiency through the ETL than hole extraction through the HTL (Figure 20b).213 EBIC measurements also enable a more direct probe of the extraction of carriers injected locally into a specific spot at the layer cross section. Notably, Edri's EBIC measurements on device structures that feature mesoporous Al2O3 films at the ETL side demonstrate that the device operation is feasible even with an insulating scaffold. Hence, a PSC, based on this HaP absorber (MAPbI3) operates in n-i-p mode.213 C.1.1. Substrate/HaP Interface Chemistry The HaP/substrate interface under bias and illumination: Transient and reversible electrochemistry 74 The barrier formation at the interface between substrate and HaP film, proposed above, implies the movement (and trapping) of charge carriers -- electronic and ionic ones -- at the interface, which then results in an additional measurable component to the capacitance. This behavior can be observed to some extent in a broad range of HaP compounds (e.g. MAPbI3, FASnI3, etc.) and surfaces in the low frequency modulation of the capacitance under light bias, where the effect is in general more pronounced for the oxide/HaP interface compared to an organic semiconductor/HaP interface.214 These observations suggest that at the least the interface exhibits different degrees of trapping charge carriers. In a more quantitative picture, the order of magnitude of the capacitance cannot be explained any longer with only the accumulation of photogenerated electronic charge carriers (electrons and holes). The theoretical upper bound for a purely electronic capacitance without ion movement and chemical reaction at a planar Figure 20 -- (a) KPFM images of topography and CPD before, with, and after illumination of a PSC stack cross-section in short circuit conditions. The increase in potential in the perovskite capping layer upon illumination corresponds to hole accumulation. Post light exposure, the unbalanced charge extraction leads to holes trapped in the mesoporous layer (>h+<) and electrons in the HaP capping layer (>e-<). Reprinted with permission from Ref. 211. Copyright 2014 by Springer Nature Publishing AG. (b) EBIC measurement configuration, (c) secondary electron (SE), and electron beam current (EBC) image of a PSC stack cross-section. (d-e) SE and EBC line profiles for lines marked in (c) with numbers designating the layers: 1, glass; 2, FTO; 3, TiO2; 4, MAPbI3-xClx; 5, HTM; 6, Au. Reprinted with permission from Ref. 213. Copyright 2016 by Springer Nature Publishing AG. 75 interface is limited to around 0.05 mF/cm,215 which is almost two orders of magnitude below the capacitance (10 mF/cm) measured for MAPbI3-based PSCs with either mesoporous or planar TiO2 ETL substrates.214 A major hypothesis to describe the large capacitive effect in HaP-based devices is stoichiometric polarization, which is defined as ion accumulation and the resulting space charge created at the respective carrier selective electrodes, leaving the overall stoichiometry and defect density of the material unchanged.216 While this effect would be sufficient to describe the magnitude of hysteresis in a PSC, it would be independent on the type of contact. This stands in contrast to the varying degree of hysteresis as a function of the interface (formation) with the charge transport layer or electrode. Hence, in addition to the stochiometric polarization, Faradaic processes similar to the chemistry occurring at electrode interfaces in electrochemical cells, can contribute to the discrepancy between expected and observed capacitances in the case of planar oxide/HaP interfaces.216 One such transient and reversible chemical process occurs readily for the prototypical interface between MAPbI3 and TiO2, and can be inferred to from the reaction of iodine gas with the isolated surfaces (figure 21a): 𝑒𝑒TiO2− + Iads,MAPbI3 − ⇋Iads,TiO2 − +𝑒𝑒MAPbI3 − +trapMAPbI3 0 , where an iodine atom from MAPbI3 can move across the interface, leave a surface trap on the MAPbI3 side, adsorbs onto the TiO2 layer, and depletes the oxide of an electron.216 The corresponding reaction kinetics are subject to an extended set of parameters. While the structure at the interface defines the reaction front, the availability of reactants along with their replenishment, i.e. through field-driven ion migration from the bulk, play a major role in the quantification of this effect. Consequently, the timescale for the built-up of this (partially) reversible chemical capacitance can span tens of seconds and is hence compatible with reported hysteresis parameters. 76 The interfacial chemistry described above is not limited to the MAPbI3/TiO2 system, but manifest in similar reaction pathways at other interface to the HaP film. HaP compounds are prone to further dissociation under external stresses (light exposure, temperature),217 and one needs to consider that the degradation products of the HaP layer can serve as reaction partners. In the case of MAPbI3, exposure to light and elevated temperatures can lead to the formation of PbI2 and further NH3, MAI, HI, MA, I2 and Pb0 (figure 21b). In turn, this leads to compositional variations of the HaP film, which induce changes in the energetic landscape of the interface. The energy offset between the conduction band minimum of the TiO2 layer and that of MAPbI3 is calculated to be smaller for the PbI2-terminated surface than for the MAI-terminated one (see section B). An MA deficiency at the interface would therefore lead to an energetic landscape that is beneficial for charge transfer but would also increase quenching rates at the interface.218 Figure 21 -- (a) Reversible surface chemistry for TiO2 and MAPbI3 surfaces leading to solid state interfacial chemistry that dominates transient optoelectronic behavior. Reprinted with the permission from Ref. 2016. Copyright 2017 American Chemical Society. (b) Upon light exposure and with elevated temperatures MAPbI3 and PbI2 undergo various degradation mechanisms resulting in potential reaction partners for interfacial chemistry. Reproduced from Ref. 217 with permission from The Royal Society of Chemistry. 77 Chemistry-dominated HaP layer growth: In addition to the transient electrochemical processes taking place at an existing interface, reactions can change the formation process of the growing interface -- and eventually the bulk of the film -- during the formation of HaP compounds on top of reactive substrates. In a reverse example, a PbI2 film deposited on a TiO2 scaffold can be converted to MAPbI3 by post-deposition exposure to an MAI-containing solution (e.g. dip-coating), in which case the chemical activation of the reaction front is strongly modulated by additional illumination. Ummadisingu et al. performed electrochemical impedance spectroscopy of the PbI2/TiO2 system and suggest that their data show the presence of surface traps in the PbI2 film.219 They propose these traps to be populated with photo-generated holes under illumination, which increases the amount of surface charges. Iodide anions in the MAI solution migrate to the MAI/PbI2 interface to compensate the positive charges, which Ummadisingu et al. suggest to happen not only in this two-step deposition process but could also occur in a one-step HaP crystallization process.219 Generally, these formation processes are difficult to monitor, but tracking the fate of ultra-thin evaporated HaP films can be an important first step to deconstruct the interface and infer on the nature of the interfacial chemistry. Hence, we turn to the deposition via an evaporation process to closer examine the interface formation. Condensation and crystallization of high-quality HaP films from evaporation are primarily governed by the precursor materials in the sources, deposition rates and partial pressures during deposition.220 However, these processes are also strongly influenced by the substrate used for the layer growth. In the early stages of the HaP film formation, the evaporated precursors interact with the surface. The complexity of this process is substantially increased as the precursors can break up into volatile compounds that can induce further reaction schemes. As a result, different substrates can catalyze the formation of intermediate compounds that differ significantly from the stoichiometric ratio of the desired HaP compound. The effect is very clear for the evaporation of MAI and PbI2 precursors to grow MAPbI3 on top of a variety of oxide and organic substrates. XPS measurements performed at various stages of the 78 growth provide a chemical analysis of intermediate phases and confirm that the formation of MAPbI3 is preceded by the growth of non-stoichiometric compounds.187 The spectra in figure 22 give evidence for surfactant species that are specific to the respective HaP/substrate combination: formation of CH3-O, In- I and NH3-O bonds on indium-doped tin oxide (ITO); PbSO4 on (sulfur-containing) PEDOT:PSS; O-CH2-O and CH3-O on MoO3; and Pb-O on PEIE-covered ITO. In general, reactivity and break-down of the precursor phase into non-HaP components are more pronounced on top of oxide surfaces compared to organic semiconductor surfaces. In the case of evaporated MAPbI3 on MoO3 and ITO, the measured thickness of the film strongly deviates from the nominal evaporated thickness (below a nominal thickness of 10 nm) due to the formation and re-evaporation of volatile compounds. The effect is particularly clear with the Figure 22 -- XPS core level spectra of nominally (a) 3 nm and (b) 200 nm thick MAPbI3 films from co- evaporation of MAI and PbI2 precursor materials on top of various substrates. The table on top lists possible components of interfacial chemical reactions, divided into products (P), educts (E), decomposition products (D), and surfactants (S). Binding energies of the peaks were shifted in some cases to an overlay of the Pb 4f7/2 level of the Pb2+ component to enhance comparability. Reprinted with permission from Ref. 187. Copyright 2017 by Springer Nature Publishing AG. 79 observed deficiency in deposited lead, presumably due to the formation of volatile tetramethyl lead. In contrast to the decomposition of the precursor phases on top of the oxide surfaces, growth of stoichiometric HaP film sets in earlier on top of organic substrates after deposition of a nominal 3 nm HaP film.187 It is noteworthy that the decomposition can be both simply catalyzed by the substrate or resulting in a strong reaction of the substrate components themselves. Remarkably, even though the formation of stoichiometric HaP starts at an earlier stage in case of growth on MoO3 compared to ITO, the MoO3 substrate exhibits a more pronounced reaction by decomposition into sub-stoichiometric MoO3-x species (see figure 23). In general, however, the trend in compositional variations of the HaP film stoichiometric is confined to the interfacial region to the substrate, and the surface of a 200 nm thick evaporated MAPbI3 film shows the expected elemental ratios of the top-most layers far away from the interface. Nonetheless, the film formation and surface morphology can be severely affected by interface chemistry, as shown in the SEM micrographs of 200 nm thick MAPbI3 films (figure 23).187 Figure 23 -- XPS spectra of substrate specific core level peaks during incremental deposition of MAPbI3 on top, with the evolution of (a) N 1s originating from PEIE, (b) In 3d3/2 from ITO, (c) S 2p from PEDOT:PSS, and (d) Mo 3d peaks from MoO3. The morphology of the various 200 nm thick MAPbI3 layers is captured in the SEM top view and cross section images for MAPbI3 on top of (e) PEIE covered ITO, (f) ITO, (g) PEDOT:PSS, and (h) MoO3. Reprinted with permission from Ref. 187. Copyright 2017 by Springer Nature Publishing AG. 80 In the case of MAI and PbI2 precursor evaporation on a TiO2 surface, again with the intent to grow MAPbI3 thin-films, the initial nucleation and subsequent growth of the HaP are strongly impeded. The initial stage of growth yields island-like aggregates on the bare TiO2 surface and does not result in the nucleation of the pure HaP phase until approximately 15 nm of precursor material are deposited.221 Another report concludes that the initial stage of growth (∼ 5 nm) of this interface system mostly leads to the formation of PbI2,222 which stands in contrast to the substantial lead deficiency observed in the corresponding experiment of MAPbI3 deposited on MoO3, ITO, PEIE and PEDOT:PSS.187 However, the occurrence of a PbI2-rich interfacial layer was described for other HaP/oxide systems, such as MAPbI3/ZnO, where the PbI2 layer forms a barrier for electron extraction and could be the origin of a nucleation front for the degradation of MAPbI3 films in ZnO-containing MAPbI3 devices.197 In summary, we note that discrepancies in reported intermediate layer composition and evolution with increasing thickness can be attributed to: (i) Variations in the evaporation process and precursor integrity, which can sensitively fluctuate with minor alterations to the experimental setup,220 (ii) variations in the substrate preparation, cleaning and pre-conditioning (various chemical passivation strategies for oxide surfaces will be discussed in section C.1.4), (iii) transient changes in the composition and chemical constituents of the intermediate phase induced by the exposure of the interfacial layer to illumination and X-ray radiation in vacuum. We described documented changes in the film composition earlier in section B.2.3, but need to underline here that changes could occur quasi-instantaneously, in particular in the vicinity of a catalyzing oxide surface. Particularly, the radiolysis of nitrogen-containing fragments of the MAI precursor and reactive Pb0 in lead-based HaP materials has been well documented.33,158,160,164 In spite of these considerations, one should question the degree to which the observations made for ultra- thin evaporated HaP films are representative of the interface between any given substrate and thick HaP 81 films, grown on top without specific perturbation or stimulus. Accordingly, the evaluation of peak level position, valence band onsets, and work function changes for the determination of energetic alignment and band bending in both substrate and HaP film at the interface would be subject to significant disruption in incremental growth studies, particularly for the early stage of growth, for which we find intermediate phase formation. C.1.2. Substrate-dependent HaP doping characteristics The limited access to the HaP/substrate interface becomes a major shortcoming for the description and understanding of the electronic interactions at the buried interface. Beside assuming a central role in interfacial electrochemistry as well as in templating the initial stages of growth, the substrate also exerts immediate influence on the apparent doping characteristics of the HaP film. The effect is illustrated for MAPbI3 films, deposited by spin-coating on top of substrates with different doping characteristics. XPS measurements performed on these films give the position of the VBM (here approximated by a linear fit to the leading edge, see discussion in section B.2.1.) with respect to the Fermi level EF in the gap.37 If one coarsely groups the substrates into two different categories, i.e. n-type FTO, Al2O3/ TiO2, TiO2, ZnO, ZrO, and p-type PEDOT:PSS, NiO, Cu2O, one observes that the Fermi level position at the perovskite surface (and presumably in the bulk) follows the doping characteristics of the substrate: the Fermi level appears very close to the CBM for MAPbI3 on the former group, and much closer to mid-gap on the latter group (see Figure 24). Note that the reported values of the absolute position of EF depend sensitively on the determination of the valence band edge, which in turn should take the low density of states into account as described in section B.2.1. 82 The behavior was confirmed in an extensive combined UPS/IPES study that probed the surface of MAPbI3 films spin-coated on top of heavily n-doped TiO2 and p-doped NiO substrates.38 While the MAPbI3 films exhibited the same fundamental structural, morphological, and optical properties, as measured by XRD, AFM, and PL, the direct and inverse photoemission spectra point out clear changes in the electronic properties of the surface (figure 25): the work function increases by 0.7 eV, the valence band features and VBM shift by ∼0.6-0.7 eV to lower binding energy (toward EF), and the conduction band onset shifts by ∼0.7 eV away from EF, when changing from the TiO2 substrate to the NiO substrate. Overall, the direction and magnitude of the change in work function and shift in the frontier electronic energy levels is evidence of a true shift of EF in the gap of the HaP film, which is hence n-doped on TiO2 and slightly p-doped on NiO. The lack of any marked difference in the structural and optical properties of the HaP bulk film indicate that the change of the HaP's doping character must originate from the interface region to the underlying Figure 24 -- Band offset of MAPbI3 film on various substrates with values for the VBM (derived from linear fit to band onset) and vacuum level determined from XPS and values for the CBM projected from a calculated band gap of 1.7 eV. Reproduced from Ref. 37 with permission from the PCCP Owner Societies. 83 substrate rather than from any variation of the bulk. The remarkable aspect of this observation lies in the fact that the electronic properties were determined at the sample surface: given the MAPbI3 film thickness, the change in Fermi level position at the surface was propagated from the interface, located 250 -- 400 nm underneath. The origin of the effect can be threefold: • The different substrate surfaces could induce the formation of non-stoichiometric intermediate HaP phases. The reaction products and surfactants then act as "self-dopants" in the interfacial region, change the chemical potential for the growth conditions in the short window of the film growth, and tip the doping range depending on a de facto PbI2 or MAI rich precursor phase.25 • The work function of the substrate could dictate the alignment of the energy levels in the HaP semiconductor through vacuum level alignment, a mechanism that has been recognized for the majority of organic semiconductor interfaces. Figure 25 -- UPS and IPES spectra of MAPbI3 films spin-coated on top of TiO2 (orange curves) and NiO from a sol-gel process (sNiOx, black curves). Change in work function and a concomitant shift of all frontier energy levels indicate a shift of EF in the gap. Reprinted wih the permission from Ref 38. Copyright 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 84 • The highly doped substrate could pin the Fermi level of the adjacent HaP film. In this latter case of remote doping, no chemical species would be exchanged between the two material systems. The correlation between substrate work function, or doping type, and Fermi level position in the HaP film suggests that one of the latter two cases describes the scenario more consistently, while no such correlation has been found for the reactivity of the substrates, which ranges from inert (PEDOT:PSS, Al2O3) to rather reactive or photocatalytic (NiO, ZnO, TiO2).37 In contrast to bulk chemical doping, the observed remote doping at the interface lacks a clear origin or rationale for screening lengths. In this context, we remind the reader that the term remote doping (or modulation doping) was coined to describe the physical separation of the dopants, placed in one layer, from the carriers, released in an adjacent layer, thereby decreasing ionized impurity scattering and increasing mobility for these carriers.223 The effect of remote doping is important in intrinsic (low density of free charge carriers) and high purity (low density of deep or mid gap defect states) semiconductors, in particular in terms of the temperature dependence of carrier mobility. In a uniformly doped semiconductor, mobility generally scales with temperature according to µe,h(T) ∝ T3/2 at low temperature (ionized impurity scattering) and T-3/2 (or stronger, i.e. more negative) at higher temperature (phonon scattering). In a remotely doped semiconductor, the absence of ionized impurity scattering should result in a more metallic-like behavior at low temperature, i.e. a smooth increase of mobility with decreasing temperature.223 Yet, experimental verification of carrier mobility has proven to be a complicated task in HaPs, requiring careful navigation around measurement artifacts and extrinsic factors. As a result, it has been noted that for any given HaP stoichiometry, reported carrier mobility values encompass a considerable range depending on the probed time scale.224 While such conclusion (as others) is an interpretative one, there is some consensus that Fröhlich interactions (i.e. scattering with polar optical phonons, where the electron density polarizes in response to lattice fluctuations)225 can explain much of the carrier scattering.226 85 With respect to device fabrication, the exploitation of remote doping could give rise to substantial tailor- made adjustments in device functionality. In particular, HaP films on top of p-doped substrates do not exhibit a strong p-type character, as seen from mostly mid-gap EF positions. Various reports on improved solar cell device parameters due to additional doping of the underlying NiO HTL substrate (e.g. through Cu impurities or oxygen doping) could hence in part be related to better transport properties in the HaP films.208,227,228 However, it is generally not possible to test the above hypothesis alone, nor feasible to deconvolute the various contributions to the performance of the device. For instance, the fabrication of MAPbI3 films on top of heavily Li-doped NiO leads to an increase in HaP film crystallinity, reduced trap densities in the bulk, and potentially a more favorable interfacial energy level alignment compared to similar films produced on top of PEDOT:PSS substrates. For completed PSC devices, the interchange of the HTLs even led to the improvement of the device characteristics with a remarkable increase of VOC from 0.9 V to 1.1 V, in case of a PEDOT:PSS and a Li:NiO HTL, respectively, but the exact contribution of each abovementioned factor to the device functionality remains to be quantified.228 C.1.3. Buried interface analysis via Hard X-ray photoemission spectroscopy As seen above, the choice of the bottom transport layer affects the position of EF at the top of the HaP film. However, the exact evolution of the position of EF throughout the HaP film, including the possibility of band bending, has not been clearly established by surface sensitive measurements, which probe regions limited to the top most layers of the HaP film. Hard X-ray photoemission spectroscopy (HAXPES) studies offer the same electronic and chemical insight as conventional XPS measurements, but the higher photon energies result in higher kinetic energies Ekin of ejected electrons. Consequently, these photoemitted electrons escape from deeper inside the sample, according to a Lambert-Beer law with a mean free path λ of electrons in solids derived from the empirical relation:229 86 𝜆𝜆= 𝐴𝐴𝐸𝐸kin2 +𝐵𝐵�𝐸𝐸kin ≈ 𝐵𝐵�𝐸𝐸kin for 𝐸𝐸>150 eV, where A and B are material constants. At very high excitation energies (on the order of 10 keV), the technique can be used for direct assessment of the electronic properties and elemental composition hundreds of nm below the surface, and down to the interface with the substrate. The technique was thus successfully employed for a broad range of semiconductor heterostructures such as oxides and thin-film silicon for solar cell applications.230,231 HAXPES measurements have been performed on several HaP/substrate systems but often without capturing the buried interfacial region.232 -- 238 Nonetheless, spectra taken at various excitation energies enable us to derive a first assessment of chemical and electronic structure gradients in the material, even without reaching down to the substrate layer. In an approach to probe the effect of non-stoichiometric ionic distribution, Jacobsson et al. measured core level spectra of FA0.85MA0.15PbBr0.45I2.55 films on SnO2 substrates, made from precursors that were either in a stoichiometric ratio or had 10% excess or deficiency in PbI2.237 Spectra of the perovskite core levels (Br 3d, I 4d and Pb 5d) and valence band were taken at excitation energies of 758 eV, 2100 eV and 4000 eV, which correspond to probing depths of tp ∼5, ∼11, and ∼15 nm, respectively. The spectra for 758 eV and 4000 eV excitation energy are shown in figure 26. The measurements confirm that the I/Pb ratio (a) increases with PbI2 deficiency and (b) decreases at higher excitation energies, i.e. with the signal originating from further down in the bulk. With their compositional analysis, along with a generally lower I/Br ratio at the surface, Jacobsson et al. propose a model in which the HaP film is terminated with an overlayer of unreacted FAI, followed by a Br-rich perovskite phase modeled in figure 26c. In this picture, however, the FA/MA ratio should be different at the surface than in the sub-surface region, which can be evaluated from the N 1s core level spectra with clearly different signatures for MA (EB = 402.5 eV) and FA (EB = 400.9 eV).237 The absence of any trend in this metric as a function of probing depth is somewhat surprising and could be explained by a concomitant 87 FA deficiency in the top-most perovskite layer. Overall, the model remains coarse and points to the difficulty to derive exact layer models for these complex quintenary compounds from HAXPES measurements alone. In a complementary set of PES measurements, the evaluation of the valence band onsets suggested the absence of any measurable band bending in the top 15 nm of the HaP films, despite Figure 26 -- HAXPES measurements of FA0.85MA0.15PbBr0.45I2.55 at excitation energies of (a) 4000 eV and (b) 758 eV. The spectra show the regions of the Br 3d, I 4d and Pb 5d core level peaks for films that were prepared with either stoichiometric (0%), excess (+10%), or a deficiency (-10%) in PbI2. Reference spectra of a PbI2 film are plotted for the sake of comparison. (c) Species distribution in the surface and sub-surface region from the HAXPES measurements indicating PbI2-rich bulk (dark brown) and a surface FAI layer (light brown). Reprinted with the permission from Ref. 237. Copyright 2016 American Chemical Society. 88 the previously determined compositional gradient.235 We add as a further remark, that the PES analysis can be subject to beam-induced alterations, particularly for intense synchrotron radiation as excitation source (see section B.2.3.). Nonetheless, the method opens an avenue to qualitatively determine compositional heterogeneity in HaPs. Analogous HAXPES measurements of HaPs exhibiting even more components (quadruple cation: FA+, MA+, Cs+, Rb+) by Philippe et al. demonstrate not only that their incorporation could be inhomogeneous, but also that the degree of inhomogeneity can vary strongly with the type and combination of cations employed.234 For instance, very little Rb is found in the surface layers in RbFAMA based systems, which could be consistent with Rb segregation to the bulk/bottom of the sample. In contrast to that, Cs in CsFAMA seems to be more homogeneously dispersed and, in case of the CsRbFAMA, lead to a better dispersion of Rb in the film with an equally stoichiometric concentration of Rb in the surface region as well.234 We note that further verification of this compositional gradient could be envisioned by employing complementary experimental tools to investigate the sub-surface region. For instance, time of flight secondary ion mass spectrometry (ToF-SIMS) could be used to generate a chemical profile down to the substrate layer.239 The HAXPES approach can also be enriched if combined with other more bulk sensitive spectroscopic techniques that yield additional chemical information. Fluorescence yield X-ray absorption spectroscopy (FY-XAS) is a complementary technique that can be applied in tandem to the HAXPES investigation of HaP compounds, for instance, to better analyze phase segregation. In the case of MAPbI3-xClx, no stable compound with stoichiometric alloying could be achieved and a concomitant XPS analysis of the surface layer yields only negligible amounts of Cl even when the film is produced in a wet process from MAI and PbCl2 precursors, which should yield a I:Cl ratio of 1:2. In the HaP chlorine concentrations only as small 2% are reported.240,241 The actual amount of chlorine incorporation -- as measured by the concentration of surface Cl -- is strongly dependent on the preparation technique. For instance, post-annealing a film 89 composed from MAI and PbCl2 precursors to 140°C under UHV conditions leads to no detectable surface Cl in the accuracy limit of XPS (< 1%), and the in situ monitored decrease in Cl content measured at the surface sets in at temperatures around 50°C already.238 This experiment alone, however, does not reveal Figure 27 -- (a) HAXPES and (b) FY-XAS data of a MAPbI3-xClx thin film. (a) Cl 2p and I 4s region with no detectable trace of Cl in the first 26 nm. (b) The comparison of the Cl K edge for a plain substrate (compact TiO2) and substrate + HaP layer system gives a lower bound for the overall chlorine concentration in the sample. Reproduced from Ref. 238 with permission from The Royal Society of Chemistry. (c) Charge displacement analysis and simulated slab structure comparing TiO2/MAPbI3 and TiO2/MAPbI3-xClx interfaces. Reprinted with the permission from Ref. 105. Copyright 2014 American Chemical Society. 90 if the loss of Cl from the initial PbCl2 precursor, tracked via XPS and leading to substantially chlorine- deficient MAPbI3-xClx films, is homogenous. HAXPES data of a sample, depicted in figure 27a, do not show any detectable trace of chlorine for excitation at 2 keV nor 6 keV photon energy, which correspond to probing depths of 10 nm and 26 nm, respectively. Since the relative photoionization cross sections of the I and Cl core level orbitals change with photon energy, Starr et al. calculate the minimum amount of detectable Cl with respect to I as Cl:I < 0.024 for 2 keV and Cl:I < 0.15 for 6 keV. Thus, for the (3-x)/x concentration profile of Cl with respect to I in a MAPbI3-xClx sample, the upper limit for the Cl-deficient stoichiometry would be MAPbI2.93Cl0.07 for the top-most 10 nm and MAPbI2.6Cl0.4 for the top-most 26 nm of the film. However, the FY-XAS measurements performed in the same spot (Figure 27b) reveal an extra component at 2827.4 eV binding energy, tentatively attributed to chlorine in PbCl-coordination.238 Given the calculated detection limit in the FY-XAS measurement, which are averaged over the entire film thickness, the Cl concentration in the lower half of the ~60 nm thick sample would at least be MAPbI2.6Cl0.4. This suggests therefore that the layer is not completely depleted of chlorine but exhibits a non-negligible Cl content at the buried TiO2/HaP interface, which could potentially be linked to persistent PbCl2, i.e., the most insoluble of the precursors and thus the first to precipitate in a solution deposition process. This scenario has direct implications in terms of barrier formation and charge carrier transfer across the bottom interface: Introducing chlorine substitutions of iodine at a TiO2/MAPbI3 interface, DFT slab calculations, which are reminiscent of those presented in section B on the exposed surfaces, indicate a redistribution of charges (figure 27c). Mosconi et al. calculated that in this case the coupling between the Ti and Pb conduction band states is increased and project that the alignment between the energy levels of TiO2 and HaP is slightly more favorable than without Cl at the interface, due to an upshift of the CBM on the TiO2 side (besides further changed properties such as modified growth and film stability of the HaP layer).105 91 C.1.4. Examples for oxide substrate modifications and passivation In the previous sections we described that, while the electronic energy level alignment between oxide substrate and HaP layer has hardly been accessible, the interface chemical reactivity has been identified, e.g. through the incremental growth studies, as a major obstacle for the control of junction formation. In the conventional PSC device architecture, a set of strategies has emerged to either substitute the bottom oxide layer by a less reactive ETL (e.g. replacing TiO2 by SnO2),196,242 employ a surface modification such as an ultra-thin interlayer on the oxide ETL prior to HaP film deposition, or a combination of both. Various interlayer approaches have been tested, ranging from polymer films over organic self-assembled monolayers (SAMs) to alkali halide salts, which could undergo (partial) incorporation into the HaP film.56 It is important to keep in mind that the effect of these buffer layers may not only be to suppress interfacial chemistry, but also to passivate trap states in the oxide that could otherwise act as recombination centers, and improve the energy level alignment between oxide and HaP film to reduce barriers for carrier extraction. The case of ZnO ETL surfaces provides a good example of a particularly reactive substrate for the formation of a top HaP film. PSCs fabricated using ZnO ETLs generally suffer from a strong thermal instability and HaP film degradation which originates from the ZnO surface. The basic ZnO surface deprotonates the methylammonium cation, which leads to a loss of methylamine and the formation of PbI2.243 Like for the evaporation of MAPbI3 on top of other oxide surfaces, discussed in section C.1.2., XPS measurements reveal the formation of a PbI2 phase at the immediate interface with ZnO substrate for MAPbI3 films deposited on top by co-evaporation.244 Yang et al. compute that this decomposition process should be accelerated by the presence of surface hydroxyl groups and residual acetate ligands from the HaP precursors.243 Hence, they describe the removal of these moieties by calcination as a strategy to achieve a thermally more robust HaP film. This could be the mechanism that improves the stability of the HaP film when a ZnO substrate from a nanoparticle solution is substituted by Al-doped ZnO (ZnO:Al) from a 92 magnetron sputtering process as the amount of surface hydroxyls would be reduced substantially.197 Similar outcomes are partially reached in alternative fabrication methods of the ZnO layer by electrodeposition or sputter deposition, which is usually done to improve the morphology and optoelectronic properties of the ETL itself (e.g. conductivity, optical transmittivity, etc.).245,246 However, in both examples, neither hysteresis in the PSC device, which presumably stems from interfacial chemistry, nor ageing, i.e. the decline of the device performance parameters over days of testing, could be entirely averted. A different approach thus seeks out to mitigate the detrimental interface chemistry by introducing buffer layers between ETL and HaP film. The case was demonstrated for ZnO ETLs to a first order by employing a substantial amount of PbI2 presumably forming an interlayer,247 or in a more advanced approach using PCBM or PEI coatings.248,249 Organic molecular (mono)layers as buffer layers: The concept of employing thin organic interlayers or self-assembled monolayers (SAMs) to improve metal oxide transport layers was introduced well before their application in PSCs mentioned above. As the idea has been widely explored in the field of molecular electronics, a thorough review gives an in-depth account on the modification of chemistry and electronic properties of semiconductor surfaces,250 and more precisely oxide semiconductor surfaces.251 SAMs based on fullerene derivatives, e.g. PCBM, have found use early in the development of solid state PSCs to decorate the mesoporous TiO2 scaffold (Figure 28a).252 Interestingly, the initial conjecture by Abrusci et al. had been that while the PCBM acts as a very effective electron acceptor from the MAPbI3, it would inhibit further electron transfer into the nanocrystalline TiO2 due to unfavorable energy level alignment. This approach was hence thought to be beneficial for the mesoporous structure, for which Abrusci et al. suggest that electron transport could be maintained in the perovskite film via multiple trap-and-release events at the fullerene-based SAM, instead 93 of electron transport via the TiO2 nanocrystalline film. Nonetheless, the application of a fullerene SAM was eventually translated to planar PSC device structures as well, where significant improvement in the device characteristics and reduction of interfacial capacitance were observed (Figure 28b).198 In contrast to the earlier assumption that electron transfer to the metal oxide would be impeded, time-resolved photoluminescence measurements indicate a faster quenching rate of photo-excited charge carriers at the interface than without the fullerene surface modifier. Additional electroluminescence measurements and time-resolved microwave conductivity measurements show that the SAM surface modification does reduce non-radiative recombination and indeed promotes electron transfer at the interface. In this Figure 28 -- (a) Schematic of a PSC device with a fullerene-based SAM covering the mesoporous TiO2 ETL. Reprinted with the permission from Ref. 252. Copyright 2013 American Chemical Society. (b) fullerene- based (C-60) and benzoic acid SAMs on a compact TiO2 ETL in planar PSC cell geometry. The inset depicts PL decay transients of the MAPbI3 emission band. Reprinted with the permission from Ref. 198. Copyright 2014 American Chemical Society. (c-e) Benzoic acid SAM functionalization of NiO surfaces in inverted MAPbI3 based PSCs with (d) the work function determination of the modified NiO surfaces from the UPS spectra and (e) a correlation between substrate work function and device open circuit voltage. Reprinted wih the permission from Ref. 258. Copyright 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 94 scenario, the SAM would also passivate localized traps, i.e. under-coordinated surface Ti4+ ions. Furthermore, it was suggested that trap states in the perovskite film could be passivated by the fullerene,253 which in itself could aid to the reduction of recombination at the interface region. Such a passivation mechanism for the HaP film is still under intense debate; under-coordinated halogen such as I- as well as Pb2+ sites could form trap states (halogen anions as hole traps and lead cations as electron traps), which can act as recombination centers. We will discuss in a later section (C4.1), that Lewis acids can be employed to bond halogen anions and passivate the surface defects of a HaP film, while Lewis bases can be used to passivate under-coordinated Pb2+ sites,254 like in well-established molecular passivation routines for II-VI and III-V semiconductor surfaces.255,256 Here, in a similar fashion the interface modifier at the bottom substrate interface of the HaP film could take over an analogous role. Despite the rather preliminary explanations of interfacial properties between oxide, organic SAM and perovskite film, as well as only rudimentary stability data, many research groups reported that the power conversion efficiency, taken as a significant parameter of the PSC, was generally improved after surface modification. Qiao et al. summarized these cell enhancements for HaP-based semiconductor devices in their survey for many different substrate oxide layers, such as TiO2, ZnO and SnO2.257 In a similar fashion, SAMs can be employed in inverted perovskite solar cell structures where the molecular layer (e.g. based on para-substituted benzoic acids) functionalizes the HTL NiO substrate as shown in Figure 28c.258 The various substitutions on the para-position of the benzoic acid change the dipole moment of the molecule and thus the dipole of the resultant SAM, for which the average molecular orientation is well-defined and aligned to the substrate surface normal, as has been extensively reported before for a wide range of semiconductor surfaces.256 As a result, the work function of the NiO surface is either lowered (negative dipole) or increased (positive dipole), leading to a change in energy level alignment with the subsequently deposited MAPbI3 film. Wang et al. measured the work function change 95 (∆WF) by UPS (see figure 28d) and compared these values to the change in Voc for devices produced with the same SAM interlayers between NiO and HaP absorber (Figure 28e).258 We note that while the two values change parallel, the excursion of the work function is significantly larger than that of Voc (∆WFmax = 600 meV, ∆Voc,max = 100 meV). Hence, the work function affects the energy level alignment at the interface and could induce band bending in the HaP film but does not fully determine the attainable photovoltage. The mechanism is complex, as tr-PL measurements indicate that carrier extraction is enhanced with the application of a benzoic acid SAM on top of the NiO, which can also be attributed to a reduction in trap state densities as observed in the case of the fullerene-based SAM on top of TiO2. However, a clear assignment of these effects is further complicated by the concomitant changes in HaP film morphology, estimated from the apparent grain size in SEM images of the sample surface.258 More generally speaking, only a precise determination of the interfacial chemistry and subsequent HaP layer growth would allow to determine the specific effect of the energy level alignment on the transfer of charge carriers across the interface. Chemistry and HaP growth on passivated oxide surfaces: As laid out in section C.1.1. the growth modes of (vacuum evaporated) HaPs, particularly MAPbI3, is strongly affected by the chemical reactivity of the substrate, which leads to the formation of a PbI2-rich phase at a reactive oxide interface and a conformal MAPbI3 phase on top of an organic semiconductor substrate. These results translate well into HaP growth on a SAM-modified TiO2 substrate compared to a bare TiO2 surface. Shallcross et al. investigated the growth of MAPbI3 from co-evaporated MAI and PbI2 on top of both bare TiO2 and TiO2 coated with an amine buffer layer. Their XPS and UPS results reveal marked differences between the initial nucleation and subsequent growth of the MAPbI3 film on the two different surfaces. Film growth appears to follow a layer-by-layer mode on the amine-terminated TiO2, 96 promoting the formation of the stoichiometric MAPbI3 phase within the first 5 nm of HaP deposition, while an island-like growth of the PbI2-rich phase is observed on top of the unmodified TiO2. In the same study, control over the morphology and crystallinity of solution-processed HaP films was achieved by these modifications of the TiO2 surface.221 It is important to keep in mind that the exact nature of the interface chemistry is still being debated, and seems to depend on the details of the HaP processing. In a similar study, Will et al. investigated MAPbI3 films grown from solution of a 1:1 mixture of PbI2 and MAI in DMF and DMSO on top of TiO2 surfaces with and without modification with a C60-SAM.259 Their fit to X-ray reflectometry (XRR) data suggests a PbI2-rich phase (not excluding the possibility of forming PbOx as well) at the interface between HaP and SAM, and an MAI-rich phase at the TiO2/MAPbI3 interface (Figure 29), Figure 29 -- MAPbI3 based PSC with (a) bare TiO2 ETL and (b) C60-SAM modified TiO2 ETL forming thin interlayer phases at the immediate ETL/HaP interface. (c) Cross-sectional KPFM measurements and local CPD und (d) short circuit and (e) open circuit conditions. Reprinted with the permission from Ref. 29. Copyright 2018 American Chemical Society. 97 which appears to be in stark contrast to the expectation that the C60-SAM termination of the TiO2 should suppress decomposition. However, here the claim is made that the interfacial phases of the HaP material extend to only a few Å, well in the sensitivity regime of the XRR measurement. These changes have a pronounced impact on the carrier distribution in the layer stack under light bias. Cross-sectional KPFM measurements depicted in Figure 29c-e indicate that the difference in local CPD between dark and illuminated state in the MAPbI3 film is increased for the C60-SAM modified TiO2 substrate in comparison to the reference TiO2 substrate, which corresponds to a higher photoinduced voltage.259 Finally, we stress that the community is exploring numerous further routes to improve the oxide CTL / HaP interface, among which we find comprehensive approaches that seek to improve the electrical properties of the TiO2 while reducing surface trap state densities. Singh and co-workers investigated the incorporation of alkali metal dopants into mesoporous TiO2 scaffolds by applying various alkali bis- (trifluoromethanesulfonyl) imide (TFSI) salts in acetonitrile solutions.260 They suggest that in this configuration the electronic conductivity of the TiO2 is enhanced while oxygen vacancies are effectively being counterbalanced. In addition, the TFSI treatment grafts sulfate bridges on the TiO2 surface and could lead to the formation of PbSO4 anchors to the HaP film, which has been suggested before for the PEDOT:PSS/MAPbI3 interface from a XPS multi peak fit of the Pb 4f core level.187 The exploration of these design rules for the bottom CTL has important consequences for improving the functionality and reliability of HaP-based devices. Particularly, double-layer architectures, comprising an oxide CTL and an organic CTL, could mark an interesting strategy to mitigate photocurrent hysteresis rooted in the interfacial chemistry. Kegelmann et al. found that the magnitude of hysteresis could be reduced by applying a TiO2/PCBM double-layer ETL instead of only a single TiO2 or PCBM film. They attribute improved hole blocking by the additional wide band-gap metal oxide and decreased loss for charge transport, due to an energetically more favorable contact, to a reduction of shunt paths through the fullerene to the ITO layer.202 98 C.2. Semiconducting charge transport layers on top of HaP films We now turn to the other side of the HaP thin-film in the device, i.e. the top contact layer. In the conventional PSC geometry, this top contact layer is a semiconducting HTL, whereas in the inverted PSC geometry, a semiconducting ETL is deposited on top of the HaP. Here, we will differentiate between the use of (i) organic semiconductors, (ii) transparent conductive oxides, and (iii) conductive carbon contacts used in a range of HaP-based devices. These material classes vary widely in their expected energy level alignment, chemical reactivity with the constituents of the HaP film, and inherent optoelectronic properties that define key parameters, such as trap state densities, electrical resistivity and optical transparency. Historically, organic semiconductors have by far been the most commonly employed transport layer materials deposited on top of the HaP film. The true merit of using organic CTLs lies in the ease with which they are introduced in the device structure. This includes processing conditions compatible with maintaining the HaP film and surface integrity, and upscaling potential for large area devices. In this context, the processing conditions refer either to solution-based fabrication routes, in which the organic CTL is dissolved in a solvent orthogonal to the HaP precursors, or to low temperature evaporation-based deposition of the organic CTL. In both cases the perturbation of the HaP surface can be expected to be minimal (but not necessarily negligible as will be discussed later). The fabrication procedure has been so successful that numerous organic transport materials and dopants have been used to form high-efficiency devices.261,262 Eventually, the major promise of a HaP device employing all organic CTLs, as substrate and top layer, is that the fabrication scheme could rely on low temperature processes for cost reduction and integration in mechanically flexible device structures.263 99 In contrast to their organic counterparts, transparent conductive oxide (TCO) semiconductors are less commonly used as CTLs directly deposited on top of a HaP film. While TCOs generally promise better protection and encapsulation for the underlying perovskite,264 the reasons for the avoidance are twofold: First, the most relevant deposition methods for oxides (e.g. sputter deposition, pulsed laser deposition, etc.) are harsh; i.e. they involve the formation of highly energetic metal and oxygen species that impinge on the HaP film surface, thereby damaging it. Second, as discussed in the previous section, oxide/HaP interfaces are prone to chemical reactions that lead to many reaction products but generally comprise a partial reduction of the metal oxide layer. We will also discuss top layer conductive carbon contacts as an alternative configuration for HaP devices. This material class comprises carbon nanotubes (CNT), as well as graphene, reduced graphene oxide (rGO), or HTM-free micro-graphite carbon counter electrodes, which have been employed successfully in PSCs.265 -- 267 The integration of these nanomaterials and related carbon-based nanocomposites could mark a distinct technological advancement as they combine the facile applicability of organic semiconductors with the robustness of inorganic semiconductors. Yet, the approach remains the least tested, with only a limited number of study cases that explore the interaction between HaP films and conductive carbon overlayers. While the following sections focus on the energy level alignment and the chemical reactivity at the interface to the HaP, it is important to note that the inherent optical and electronic properties of the CTLs themselves bear requirements similar to those described in the previous section for the substrate films (e.g. high carrier mobility, good optical transmittance). Oftentimes these properties are not entirely disconnected from the interfacial chemistry and energy alignment processes. As an example, for Spiro- MeOTAD, the most ubiquitously used organic HTL,268 the addition of dopants (e.g. through ambient oxygen) leads to a change in conductivity and a concomitant change in energy level position with respect to EF, which affects carrier extraction from the adjacent HaP film.269 Additionally, the case demonstrates 100 that we now need to take additional chemical reaction pathways into account, such as the formation of superoxides at the (doped) Spiro-MeOTAD/HaP interface (see section B.1.2). It thus becomes virtually impossible to deconvolve the sum of these effects into specific contributions by only performing electrical and optical measurements. C.2.1. Energy level alignment to organic semiconductor films In the following section, we describe the electronic energy level alignment processes at the interface between the HaP film and organic semiconductors. Data from measurements and calculations then serve to substantiate whether an improved energy level alignment at the HaP / transport layer interface has a distinct impact on the transport characteristics across the interface and ultimately on the device performance. Such a correlation has been proposed early in the literature and follows well-known approaches in semiconductor physics in general,270 and injection/extraction into organic semiconductors in particular.271 For HaP semiconductors, we want to determine whether the energy level alignment with the many different doped and undoped organic transport materials that have found use in HaP-based devices,261,262,268 follow the established rules or exhibit unique character. Energy level alignment and IE matching between HaP and HTL in PSC: With the rise of the first solid state perovskite solar cell in 2012, the energy level alignment between MAPbI3 and the organic hole conductor, spiro-MeOTAD, was estimated by comparing the IE of the individual components. Those values were determined independently from each other (5.4 eV for MAPbI3 and 5.2 eV for spiro-MeOTAD) and served as a first guide for drawing the energy level diagram.193 The formation of the interface was subsequently tracked in a dedicated PES experiment, in which thin spiro- 101 MeOTAD films were evaporated on top of three different HaP layers, MAPbI3, MAPbI3-xClx, and MAPbBr3.145 A set of direct and inverse photoemission (UPS/IPES) measurements on an incrementally deposited (undoped) spiro-MeOTAD layer grown on top of a MAPbI3/TiO2/glass layer stack is presented in figure 30a. Several points can be noted in this plot. First, no work function change occurs when the first Figure 30 -- Energy level alignment between the HTM spiro-MeOTAD and HaP thin films. (a) UPS (left and middle panel) and IPES (right panel) of incrementally evaporated spiro-MeOTAD films on top of a MAPbI3/TiO2/glass layer stack. (b) Energy level diagram derived from UPS/IPES measurements of incrementally grown spiro-MeOTAD films on top of MAPbI3, MAPbI3-xClx, and MAPbBr3. Reproduced from Ref. 145 with permission from The Royal Society of Chemistry. 102 thin layer of spiro-MeOTAD is deposited, indicating that no interface dipole is formed between the two materials. Second, the offset between the VBM of the MAPbI3 film and the spiro-MeOTAD HOMO level amounts to 0.4 eV, with the spiro-MeOTAD HOMO being closer to EF. Hence, no barrier for hole extraction from the HaP onto the HTM is expected, although a barrier exists for hole injection in the other direction. Third, the HOMO level onset shifts toward higher binding energies (i.e. away from EF) with increasing spiro-MeOTAD thickness. The work function changes accordingly, as the IE of the organic layer remains equal to 5.0 eV. The absence of interface dipole, equivalent to vacuum alignment, between spiro-MeOTAD and the HaP is confirmed for MAPbI3-xClx and MAPbBr3, as depicted in figure 30b.145 It is important to note, that for all the different iterations (i.e. thickness of the spiro-MeOTAD overlayer) XPS measurements found the Pb and I core level positions to be constant, indicating that no band bending occurs in the HaP film as a result of the deposition of the spiro-MeOTAD layer. This finding is somewhat unexpected when recalling the variations in Fermi level position in a HaP film as a function of the underlying substrate (section C.1.2.). In the present case, the organic CTL on top of the HaP does not change the carrier density in the perovskite. In this picture, it was initially proposed that the energy level misalignment between the charge transport levels of the organic semiconductor and the HaP could limit the attainable solar cell device parameters. The most direct impact is expected to be on the achievable photovoltage (open-circuit voltage), as the quasi-Fermi level splitting (QFLS) in the HaP could be limited by pinning of the electron Fermi level (EF,n) close to the TiO2 CBM at the bottom interface and the pinning of the hole Fermi level (EF,p) close to the organic HTL HOMO on the other side of the cell. A straightforward solution to this problem would be to engineer the energy level alignment at the HaP / HTL interface by changing the IE of the HTM and make the HOMO onset resonant with the HaP VBM. Since indications are that vacuum level alignment exists between the two materials (i.e. no Fermi level pinning and no interface dipole, figure 30b), a change in the HTL IE would translate into a minimization of the energy offset between the HaP VBM and the HTM 103 HOMO. In MAPbBr3 based PSC in particular, a hole transport material with an IE ∼6.2 eV, N,N'-Dimethyl- 3,4,9,10-perylenedicarboximide (PTCDI-C1), exhibits a HOMO level about 0.3 eV deeper than the VBM of MAPbBr3.145 Edri et al. projected that, while this situation results in an extraction barrier for holes, generally higher Voc values would be achievable. This hypothesis, however, could not be decoupled from the need of heavily doping the HTL for achieving high photovoltages above 1.5 V.272 Figure 31 -- (a) Energy level diagram of a set of PSCs (all layers from evaporation) with various triphenylamine-based organic HTMs with IE ranging from 5.0 - 5.5 eV. (b) PV parameters (FF = fill factor, η = PCE) for PSCs fabricated with HTL layers. Numbers on the x-axis indicate the molecular compounds from panel a and are described in the text. Reprinted figure with permission from Ref. 273. Copyright 2014 by the American Physical Society. (c) SEM image and schematic of PSC device layout and (d) energy level diagram with different organic HTLs. (e) j-V curves of PSCs fabricated with the various HTLs, showing no apparent correlation of device characteristics with IE mismatch. Reprinted with the permission from Ref. 274. Copyright 2016 American Chemical Society. 104 Polander et al. investigated the effect of matching the IEs of the organic HTM and HaP on the open voltage.273 They find that for PSCs fabricated with various HTMs with IE ranging from 5.0 eV to 5.5. eV, the maximum Voc and PCE are achieved when the IE of the organic semiconductor (5.3 -- 5.4 eV) corresponds to that of the evaporated MAPbI3-xClx film (5.4 eV) used in this study (see Figure 31a,b). In this case the MAPbI3-xClx film is evaporated on top of the organic HTL (referred to as HTM in Fig. 31 a) in an inverted structure, but the example still illustrates the impact of mismatched IEs. The HTMs (referred to by number in figure 31a,b) used in this study are based on triphenylamine moieties and are spiranes with the exception of compound 2, methoxy-N,N′-diphenylbenzidine (MeO-TPD), and hence have a molecular structure related to spiro-OMeTAD. In a similar study, Belisle and coworkers investigated MAPbI3-based PSCs in the conventional structure with several HTMs with IEs varying from 5.1 to 5.4 eV.274 For each device configuration, a 15 nm thin HTL of the organic semiconductor was evaporated on top of the perovskite film. The device was then completed by applying a 5 nm thin MoOx film and a Au top electrode (see Figure 31c,d). In contrast to the previous results, the device parameters, represented by the respective j-V curves in Figure 31e, show no correlation with the IE mismatch between HTM and HaP. On the contrary, the Voc of the PSCs remains unaffected by the choice of the HTL and, hence, the adjustment of the IE. A similar lack of sensitivity of the device performance with respect to the IE of the organic HTL was further corroborated by Park et al. who employed a wide range of HTMs, looking into a new group of molecular compounds based on triarylamino-ethynylsilyl derivatives with IEs varying from 4.8 to 5.8 eV as prospective HTLs.275 Again, the device parameters remained unchanged within the margin of error for HTMs with IE between 4.8 and 5.4 eV. However, devices using HTLs with larger IEs were found to lead to a significant decline in Jsc and fill factor of the cells, which is consistent with the findings of Polander et al. and Belisle et al., for whom the HTMs at the upper end of the IE range (5.6 eV and 5.35 eV, respectively), produced cells with lower Jsc and in the latter case a pronounced S-shape of the j-V curve.273,274 The S- 105 shape diode characteristics indicate the presence of a barrier for hole extraction, as the HTL's IE is higher (lies deeper) than that of the HaP. While the results from the different groups regarding the energy level mismatch between HTL and HaP seem contradictory at first glance, i.e. in the one case impacting device efficiency but not doing so in the other case, we can derive a few seemingly general coarse rules: (i) If the IE of the (undoped) organic HTM (IEHTM) is smaller than the IE of the MAPb-based HaP (IEHaP), vacuum level alignment occurs.145 (ii) In a PSC, for the case that IEHTM < IEHaP, the quasi-Fermi level splitting, and hence attainable photovoltage, does not seem to be limited by pinning EF,p at the HTL HOMO level. (iii) If IEHTM > IEHaP, the formation of a hole extraction barrier can limit charge transport across the HTL / HaP interface, which ultimately leads to a decline in Jsc and fill factor of PSCs that constitute such an interface.273 -- 275 Generalized assessment of the energy level alignment between organic CTL and HaP: The general conclusions given above depend sensitively on the details of the experiments. First, one should note that the IE of the HaP film is not directly determined in each of the device studies presented above, but instead reproduced from the literature. Yet, as described earlier in section B.2.2., the HaP IE can vary substantially as a function of stoichiometry even for plain MAPbI3, i.e. the MAI to PbI2 ratio during film preparation.144 This case is further laid out by Hawash et al., who produced MAI-rich surfaces of MAPbI3 by evaporating a thin MAI layer on top of MAPbI3 films before the deposition of a spiro-OMeTAD HTL.276 In that study, the decrease of the IE of MAPbI3 by excess MAI was determined directly by PES and, assuming no changes upon spiro-OMeTAD deposition, could be linked to changes in device performance. 106 Hawash et al. suggest that the change of the IE through the ultrathin MAI layer would enhance hole extraction due to "staircase energy level alignment", reducing the offset between MAPbI3 VBM and the HOMO level of spiro-OMeTAD. In addition, they suspect that recombination at this interface could be reduced due to the decreased number of electrons at the interface because of slight band bending at the top of the MAPbI3/MAI layer.276 More generally, however, the energy level alignment at the HaP / HTL interface is not explicitly measured, mostly due to the inaccessibility of the buried interface. The energy level diagram instead relies on literature values of the isolated compounds, which could differ, depending on the actual interface formation. For instance, the close vicinity to a strong p-dopant (e.g. MoO3) or direct doping through additives in the HTM would lead to a different, unknown energy level alignment to the HaP film. Figure 32 -- Energy level alignment determined by UPS measurements of incrementally deposited HTLs on top of MAPbIBr2. (a) Interface dipole formation and HOMO level shift for spiro-OMeTAD, (b) vacuum level alignment for NPB, (c) vacuum level alignment with subsequent vacuum level shift for F16CuPC, and (d) interface dipole formation and vacuum level shift for HAT-CN. Reprinted wih the permission from Ref. 277. Copyright 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 107 Under this premise, it is worth examining cases of energy level alignment between HaPs and organic CTLs that deviate from the above-mentioned guidelines (i) -- (iii). In that regard, another set of PES measurements for sequentially grown organic semiconductor layers, which cover a large range of IE and EA values, on top of MAPbIBr2 conducted by Wang et al. extend the initial picture.277 In a first example, the energy level alignment (pictured in figure 32a) between evaporated spiro-OMeTAD and MAPbIBr2 exhibits a different trend compared to the results reported by Schulz et al. for MAPbI3.145 The first 0.2 nm of spiro-OMeTAD reduces the work function down to 3.7 eV from a value of 4.1 eV for plain MAPbIBr2, which Wang et al. assume to be related to charge transfer, chemical bonding, surface rearrangement, interface states, image effect, or permanent dipole orientation. The spiro-OMeTAD layer subsequently exhibits an upshift of the HOMO level as the thickness is increased.277 In a second example, Wang et al. investigated the interface between the HTM N,N′-di(naphthalene-1-yl)-N,N′-diphenylbenzidine (NPB) and MAPbIBr2 (Figure 32b), and observed the expected vacuum level alignment and absence of band bending in both layers. In Wang's third example, the growth of a copper-hexadecafluorophthalocyanine (F16CuPc) film on MAPbIBr2 was probed. Given the heavy fluorination of the molecule, its EA (∼4.6 eV) is about 0.5 eV larger than the work function of the HaP layer (deposited on TiO2). Hence, Wang et al. expect a net electron transfer from the perovskite to the organic layer and the LUMO level of the F16CuPc to be pinned to the CBM of the HaP. As the thickness of the F16CuPc film is increased, they observe no band bending on either side of the interface (Figure 32c). Instead they find a gradual change of the vacuum level position as the thickness of the F16CuPC layer increases until the equilibrium EA of F16CuPC is attained at a sufficient distance from the interface to the HaP film. This interface formation is similar to that between MAPbBr3 and PTCDI-C1, for which the EA of the organics (4.2 eV) is also larger than the work function of the perovskite deposited on a TiO2 substrate (4.0 eV).145 Finally, Wang et al. probed the interface between MAPbIBr2 and 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN). In this series of organic charge transport materials, HAT-CN marks the most extreme case with the largest EA (∼5.6 eV), a high 108 work function electron acceptor material, which is commonly used at the hole extraction (or hole injection for light emitting devices, respectively) contact in organic electronics.278 As a consequence, a significant vacuum level offset (1.2 eV) is measured at the MAPbIBr2 / HAT-CN interface, indicating the formation of a pronounced interface dipole (Figure 32d). As in the case of F16CuPC, Wang et al. observe signs of Fermi level pinning to the LUMO level of HAT-CN. Beyond the interface, the incremental deposition of HAT-CN shows no shift of either the HOMO level onset, which is now positioned at higher binding energies about 2 eV below the VBM of the HaP, or of the core levels, measured by XPS. However, the vacuum level is gradually shifted by an additional 0.4 eV for a HAT-CN layer thickness of 10 nm until thermodynamic equilibrium of the free HAT-CN surface is re-established. In summary Wang et al. conjecture that, if accompanied with a deep-lying HOMO level (e.g. for HAT-CN) the functionality for hole extraction would be impaired due to the formation of an interfacial barrier and hence a region with increased electron -- hole recombination.277 Overall, we note that the observed trends for the energy level alignment at the HaP/organic CTL interface is not conclusive and hence setting up general guidelines remains elusive. We note, that the differing accounts on the energy level alignment between various studies could be linked to differences in the interface reactivity and related chemical processes. For instance, in the study of Wang et al. the fact that band bending in the HaP layer is found upon interface formation with spiro-OMeTAD, but not with other CTLs, could be related to differences in the surface conditions of the MAPbIBr2 film.277 An indication of such variations is given by the slightly different shapes of the VB DOS, similar to deviations observed for MAI- or PbI2-rich MAPbI3,144 as well as by different contributions of metallic lead to the XPS Pb 4f core level signals. This Pb0 component could be related to faintly visible interface states at low binding energies when the first organic layers are deposited. But before we turn to a closer examination of possible interactions with surface states, we first look into additional examples of energy level alignment processes for fullerene-based ETL's as commonly used in inverted PSCs. 109 Energy level alignment to fullerene-based ETLs: As introduced in section C.1. the inverted PSC structure is often realized by depositing a fullerene-based ETL on the HaP absorber film,205 a configuration which has been suggested to assist in passivating trap states, and hence to reduce recombination.253 Fullerene-based organic semiconductors usually function as acceptor molecules. A first snapshot of the electronic structure at the interface was obtained for solution-processed PCBM layers on MAPbI3 films on an ITO/glass substrate. By diluting the PCBM solution, Lo and coworkers were able to realize PCBM films with approximate layer thickness of 5 Å and 100 Å (see Figure 33).279 The PES measurements of this interface reveal that, while no Fermi level pinning occurs (the EA of PCBM is smaller than the work function of MAPbI3 on ITO), the vacuum level is shifted from ∼4.9 eV to 4.6 eV upon deposition of the PCBM layer. In the same study, C60 films were evaporated on MAPbI3-xClx/ITO/glass samples, yielding a similar offset between the vacuum levels. We note that in both cases the VBM of the HaP film was derived from a linear extrapolation of the leading edge in the UPS valence band data, which means that the position of EF could be closer to a mid-gap position if the low DOS were to be accounted for.101 Figure 33 -- (a) UPS spectra with secondary electron cutoff region and valence band region, and (b) energy level diagram for the MAPbI3 / PCBM interface. VBM of MAPbI3 is estimated by a linear fit and unoccupied levels are projected by the band gap's found in literature. Reprinted wih the permission from Ref. 279. Copyright 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. 110 In a different set of experiments, Schulz et al. performed a thorough PES/IPES investigation of the interface of an incrementally evaporated C60 film on a MAPbI3/NiOx/ITO/glass sample (Figure 34).38 Again, a small vacuum level offset (0.1 eV) is observed between HaP and fullerenes, indicating the presence of a small interface dipole without significant charge transfer. The onset of the LUMO level of C60 is closely aligned with the MAPbI3 CBM and remains so for thicker C60 overlayers. With increasing C60 layer thickness, the work function increases gradually until the equilibrium values for EA (4.1 eV) and IE (6.4 eV) of the C60 surface are achieved. This could correspond to polarization effects as we move further from the interface to the MAPbI3 film with the higher dielectric constant or originate from changes in the C60 film morphology at different stages of growth. In line with all earlier examples of organic films grown on HaP specimens, the XPS measurements of the HaP-related core levels (Pb 4f and I 3d) show no shift in the peak centroid positions, which suggests that the HaP film does not undergo any band bending. Wang et al., who also used PES/IPES on C60 films evaporated on MAPbI3/PEDOT:PSS/ITO/glass samples, offer a differing account, in which they observe that the energy levels of the MAPbI3 layer undergo a drastic change when the first 2 Å of C60 are deposited, shifting by up to almost 1 eV to lower binding energies.280 At the same time a shift of the C60 HOMO level with respect to EF is observed with increasing C60 layer thickness. They suggest that a pronounced electron transfer occurs at the interface, and propose this process could originate from the passivation of a hypothetically high density of trap states at the MAPbI3 surface. Nonetheless, the discrepancy with other organic CTM/HaP interfaces, which did not show any band bending, remains and likely requires a re-evaluation considering the peculiarities and challenges of measuring the position of EF in HaP compounds, i.e. the sensitivity to X-ray radiation.160 Impact of HaP surface states and trap states on the energy level alignment to an organic CTL: 111 Before further conclusions on the energy level alignment at the organic CTL/HaP interface can be drawn, one should be reminded of numerous additional factors that could vary from experiment to experiment Figure 34 -- (a) UPS and IPES spectra and (b) energy level diagram of incrementally grown C60 films on a MAPbI3/NiOx/FTO/glass sample. Reprinted wih the permission from Ref. 38. Copyright 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. (c) Energy level diagram from PES/IPES measurements of C60 films that are incrementally evaporated on MAPbI3 films from different two-step solution processes. For each MAPbI3 sample, the concentration of MAI used in the second step to convert PbI2 into MAPbI3 was varied. Reprinted with the permission from Ref. 281. Copyright 2017 American Chemical Society. and between two nominally similar sample systems. One of the factors that pertains to all the studies 112 presented in this section is the actual surface termination of the HaP layer, which serves as the de facto substrate for the growth of the organic film. Presumably the HaP films presented earlier in this section comprise a MA+ moiety on the A-site and tend to be MAX-terminated, where X is the halogen species used for the HaP film fabrication (compare to section B.1.). Shin et al. shed more light on the energy level alignment between MAPbI3 and a C60 ETL by conducting a comprehensive PES/IPES investigation of the interface,281 similar to the studies of Lo et al., Schulz et al. and Wang et al..38,279,280 In their approach, however, Shin et al. systematically changed the surface electronic structure of the MAPbI3 film: the HaP film preparation from solution is based on a two-step process, in which a PbI2 film is deposited first, followed by a conversion step into MAPbI3 through a subsequent treatment with a MAI solution. Changing the concentration of MAI in the second step led to a variation of the vacuum level and Fermi level positions of the resulting MAPbI3 layers. Counter to common expectations, the N/Pb ratio was found to decrease for high MAI concentrations, yielding a Pb-rich surface, which is corroborated by the appearance of a small metallic lead component in the Pb 4f core level spectra,281 apart from the PbI2 precursor phase, which is observed in XRD patterns. While UV-Vis absorption measurements indicate the formation of MAPbI3 in the bulk (EG = 1.6 eV), the combined UPS/IPES measurements suggest an opening of the band gap at the surface. At the same time, the PbI2-rich films exhibit a shift of EF in the gap similar to earlier observations made by Steirer and coworkers.33 Despite the suggested correlation between IE and surface stoichiometry,144 the IE did not change for the different MAPbI3 films produced in this two-step process. We remind the reader that discrepancies between the studies, but also observed trends within one study, such as the band gap opening, could be affected by the challenging determination of band edges in the PES measurements and, even more so, in the IPES measurements (see section B.2.1.). Here, Shin et al. used the differently prepared MAPbI3 surfaces with different Fermi level position in the gap (VBM onset with respect to EF at 1.4, 1.3 and 1.0 eV, respectively) to grow C60 layers on top and investigate the interface electronic structure (summarized in Figure 34c).281 The data seem to indicate that only for the 113 sample with the intermediate concentration of MAI, i.e. VBM at 1.3 eV with respect to EF, the LUMO level of the C60 is well aligned to the CBM of the MAPbI3. In the other cases either a small energy level mismatch and/or interface dipole formation on the order of up to 0.2 eV is found, which is accompanied by band bending in the C60 layer to compensate the charge transfer at the interface. In the same study, PSC devices were fabricated in this inverted device architecture and with the various MAI concentrations used in the interface investigation. In fact, the device parameters, i.e. PCE and hysteresis index, were best when no mismatch of energy levels at the interface was observed in the concomitant PES analysis. Shin et al. attribute this finding to charge transfer due to the band offsets between HaP photoabsorber and the organic CTL,281 which we note, points to a variation in the interface state densities at the interface. This in turn would affect recombination and drive interfacial chemistry similarly to the case described for the interface between HaP layer and TCO substrate in section C.1. A targeted approach to evaluate the effect of surface states on the HaP semiconductor and trap state densities on the energy level alignment with adjacent organic CTLs has been pursued by Zu and coworkers.190 As noted earlier, the group had described the formation of high surface state densities and the formation of substantial amounts of Pb0 as they illuminated their MAPbI3-xClx samples in the vacuum chamber.164 In the next step, they used this treatment to precondition the surface as pristine, i.e. MAI- terminated, or highly defective after illumination, i.e. comprising a significant amount of metallic lead. The surfaces are hence denoted as low density of state surfaces (low DoSS) or high density of states surfaces (high DoSS), respectively. Subsequently, and analogous to the study by Wang et al.,277 the acceptor molecule HAT-CN was deposited in incremental steps to monitor the energy level alignment by PES.190 In contrast to the findings by Wang et al., Zu et al. report that the core levels of the HaP immediately shift to lower binding energy upon formation of a very thin (4 Å) overlayer of HAT-CN on top of the MAPbI3-xClx sample. This corresponds to a shift of EF from close to the CBM to a mid-gap position at the HaP surface. 114 The deviation from Wang's study, where the Fermi level in the perovskite layer remained close to the CBM even after deposition of the HAT-CN, can be explained by the different substrates used in the two cases and the respective position of the Fermi level in the HaP gap, as described in section C.1.2..38 Wang et al. produced their MAPbIBr2 film on top of ZnO, bringing the Fermi level close to the CBM throughout the HaP layer,277 while the MAPbI3-xClx film in Zu's study was produced on a PEDOT:PSS film, which presumably leads to a mid-gap position of EF. At the surface, however, the presence of Pb0-related donor states in the upper part of the gap pins the Fermi level close to the CBM, leading to a downward band Figure 35 -- (a) PES spectra of incrementally evaporated layers of HAT-CN on an illuminated MAPbI3 sample, showing the secondary electron cutoff region, the valence band region of the UPS spectra and the Pb 4f and I 3d core levels of the XPS spectra. (b) Interfacial energy level diagrams, derived from the PES data for HAT-CN films grown on pristine (low-DoSS) and defective (high-DoSS) MAPbI3-xClx samples. Reprinted with the permission from Ref. 190. Copyright 2017 American Chemical Society. (c) Proposed energy level alignment between undoped (left) and doped (right) PTAA on CsPbBr3 assuming either vacuum level alignment or the formation of an interface dipole. Reprinted figure with permission from Ref. 282. Copyright 2017 by the American Physical Society. 115 bending (Figure 35b).164 In the low DoSS case, the layer of HAT-CN acceptors compensates the donors, empty these states and unpins the Fermi level, restoring the flat-band condition.190 The case is slightly more complex for the illuminated high-DoSS surface, as tracked in the PES data in Figure 35a: while the amount of Pb0 compared to Pb2+ is decreased with increasing HAT-CN film thickness, i.e. the reduced Pb is re-oxidized, the shift of the Pb2+ core level is minimal. This means that the donor state density in the HaP section of the interface is too large and pins EF, hence not returning the layer back to flat band condition. The charge transfer mechanism between the Pb0 donor states and the HAT-CN molecule is further evidenced by the appearance of an additional state in the valence band spectra centered around 1 eV below EF and denoted L, which corresponds to the partially filled LUMO state. The two cases are summarized in the energy level diagrams in Figure 35b: For a low-DoSS HaP surface a strong organic acceptor molecule can induce upward band bending which results from the saturation of donor like defects, while a high-DoSS HaP surface maintains its n-type character as EF is pinned to the CBM.190 Finally, we need to highlight the fact that all interfaces discussed above were formed on MA-based compounds, which are supposedly more unreactive than those of inorganic semiconductors, due to the predominant organic surface termination of the HaP film, except for the high-DoSS cases pictured above. Hence, generalization of the findings for all-inorganic HaPs require some additional scrutiny. For instance, CsPbBr3 has been reported to exhibit a non-negligible density of states in the band gap tailing below the CBM, in contrast to its hybrid organic inorganic counterpart, MAPbBr3.101 In a follow-up investigation, Endres et al. produced CsPbBr3 films on ITO substrates on which they deposited a 15 nm HTL of undoped as well as p-doped poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA).282 A shift in the Br 3d and Cs 3d core level positions by approximately 0.1 eV after the deposition of either HTL on the CsPbBr3 film indicates a slight upshift of EF in the gap for the HaP. The VBM of the perovskite shifts from 0.7 eV to 0.6 eV below EF with the deposition of the undoped PTAA layer and to 0.5 eV below EF when brought into contact with the p-doped PTAA film. 116 The PTAA HOMO is found at 1.1 eV below EF for the undoped layer and 0.3 eV for the doped layer. However, in this experimental configuration, the buried HaP/polymer interface was not directly assessed as a sufficiently thin HTL layer could not be produced. Thus, the energy level alignment could only be proposed as either the formation of an interface dipole or vacuum level alignment as illustrated in Figure 35c. Most likely, it is a combination of band bending and interface dipole formation that leads to a barrier for hole extraction (0.5 eV) from the CsPbBr3 film in the case of the undoped PTAA, whereas doping of the PTAA film removes this barrier and raises the VBM in the HaP layer.282 In this example of a HaP/PTAA interface, it cannot be ruled out that the band bending observed in the perovskite film is related to the passivation of the CsPbBr3 surface states. In conclusion we can formulate two key rules concerning the energy level alignment at the interface between an HaP film and an organic CTL on top: • For a low-DoSS HaP layer and in the absence of surface band bending due to surface states, the interface formation to most organic layers (but not for strong electron acceptors) occurs under vacuum level alignment or by the formation of only a small interface dipole. If the EA of the organic film is larger than the WF of the HaP or the IE smaller than the WF of the HaP, Fermi level pinning can occur. Strong acceptor molecules however can cause a large interface dipole. • For an HaP layer with band bending due to surface states (observed here: downwards due to Pb0 donor states), the interface formation can be accompanied by a neutralization of these states, e.g. through the deposition of strong acceptor molecules in case of donor state defects. However, for a high-DoSS HaP layer, even the deposition of a strong acceptor molecule cannot alleviate the Fermi level pinning at the HaP/CTL interface. These broad rules leave a large window of potential organic CTL materials that do not need to fulfill narrow requirements for an exact matching of the HaP's IE or EA. Instead, the quality and surface termination of 117 the HaP layer itself predefines the regime of energy level alignment at the interface. The most important role for interfacial charge transfer lies in the saturation of interfacial defect states, which in many cases is either a minor issue due to the benign character of many HaP surfaces or could happen incidentally through the dopant molecules in the organic CTL. Hence, the success of alternative, specifically engineered organic hole transport materials,283,284 could be due to secondary properties (e.g., being dopant-free, improved conductivity, morphology, moisture resistance) as long as the bounds to avoid the formation of a charge extraction barrier through interfacial energy level alignment are preserved, i.e. IEHTL < IEHaP. C.2.2. Inorganic semiconductor overlayers: Energy level alignment, reactivity, and band bending Following the discussion of the energy level alignment between HaP and organic CTLs, we turn to inorganic charge transport materials deposited on HaP surfaces. According to the materials described in section C.1.1. regarding chemistry at the HaP/substrate interface, more pronounced chemical reactions would be expected for the growth of transparent conductive oxide CTLs than for organic ETLs and HTLs on the HaP film. Indeed, the increased reactivity makes it difficult to find examples of straightforward growth of a TCO CTL on a HaP semiconductor film that led to a functional device. Instead, a range of alternative inorganic hole transport materials was proposed and successfully tested for top layer CTLs in the conventional PSC device layout. These successes were primarily realized with the p-type inorganic salts copper iodide and copper thiocyanate (CuSCN).285,286 Both compounds had been employed previously in DSSC research and hence the approach was easily applied to the PSC research field. However, the energy level diagram of the device structures was estimated from the energy levels of the isolated compounds (see Figure 36), and to date reports on measuring the actual energy level alignment remain sparse.287,288 From the proposed energy 118 diagrams, however, hole extraction should be as efficient as for the organic HTLs discussed in the previous section, since the IEs of CuI (5.2 eV) and CuSCN (5.3 eV) are smaller than that of the MAPbI3 photoabsorber. However, this leaves open questions regarding the chemical reactivity of these interfaces. In the case of CuSCN, the claim was made that this p-type hole conductor could passivate trap states in the HaP. The claim was corroborated by optical (PL) and electrical (space charge limited current, SCLC) measurements for MAPbI3-xClx films with CuSCN as an additive in the HaP precursor solution, in an inverted cell architecture on top of ITO.289 Ye et al. further investigated the passivating capabilities of these Cu-salt HTMs and found that Cu(thiourea)I (Cu(Tu)I) could produce a PSC with high performance parameters, which they attribute to a trap passivating mechanism as depicted in Figure 36c.290 While the Cu(Tu)I was Figure 36 -- Inorganic HTL on HaP absorber films in PSCs. Schematic of the conventional device layouts and energy level diagrams for devices with (a) CuI and (b) CuSCN as HTM. (a) Reprinted with the permission from Ref. 285. Copyright 2014 American Chemical Society. (b) Reprinted with permission from Ref. 286. Copyright 2014 by Springer Nature Publishing AG. Proposed model for the passivation of trap states in MAPbI3 by CuI and Cu(thiourea)I (= Cu(Tu)I). Reprinted with the permission from Ref. 290. Copyright 2017 American Chemical Society. 119 used as an additive to the HaP precursors solution and is thus presumably incorporated at the grain boundaries in the HaP film, the mechanism could also be exploited to passivate trap states at HaP surfaces, and at interfaces with charge extraction layers and electrodes. Since neither of these inorganic HTMs would act as a strong electron acceptor on its own, a more detailed picture of the complexation chemistry at the interface would be required to better assess their role for surface passivation. The molybdenum oxide / HaP interface: Considering oxide-based HTMs, a natural first choice is molybdenum trioxide, which can be deposited on the HaP by evaporation. MoO3 has found widespread application in organic electronics, where it is used to p-dope the organic semiconductor or is introduced as a thin layer between organic semiconductor and electrode to improve the extraction of holes.291 These electronic mechanisms are rooted in the strong electron acceptor properties of MoO3 (EA = 6.7 eV, WF = 6.8 eV, IE = 9.7 eV), which could play out similarly in HaP semiconductors. However, we recall the chemistry at the interface formed upon evaporation of MAPbI3 on a MoO3 substrate, presented in section C.1.1.: during layer formation, the HaP precursors decomposed and volatile compounds were desorbed. This led to a PbI2-rich phase in the interface layers (<10 nm) close to the MoO3.187 Wang et al. monitored the growth of evaporated MoO3 on MAPbIBr2 by PES measurements.277 The UPS data are plotted in figure 37a. As the first MoOx layer (2 Å) is deposited on the HaP, gap states form, centered around ∼0.8 eV and ∼1.9 eV below EF (MoO3, Eg = 3 eV; while MoO2 is a metallic compound). These states are commonly observed in MoO3 layers and originate from an oxygen deficiency in sub- stoichiometric MoOx comprising Mo6+ and Mo5+ species as evidenced by XPS measurements. While Wang et al. were able to determine the formation of a strong interface dipole, no band bending occurred in the MoO3 layer with increasing thickness. Furthermore, no distinct trend in core level shifts could be found in 120 the MAPbIBr2 film as a function of MoO3 layer growth, and hence no clear assessment of band bending in the HaP could be made. However, in another instance, core level shifts in an MAPbI3 film were observed Figure 37 -- Incremental growth of MoO3 on HaP films. (a) UPS data and (b) energy level diagram for MoO3 on MAPbIBr2. Reprinted wih the permission from Ref. 277. Copyright 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. (c) UPS (SECO region, VB region and close-up of VB on semi-logarithmic scale) and (d) XPS core level measurements (Pb 4f, I 3d and Mo 3d with inset showing a magnification for the 1.5 Å MoO3 layer) for MoO3 on MAPbI3. Energy level diagrams for (e) MoO3/MAPbI3/TiO2 and (f) MoO3/spiro- OMeTAD(3nm)/MAPbI3/TiO2 samples. Reprinted with the permission from Ref. 188. Copyright 2016 American Chemical Society. 121 after the evaporation of a MoO3 layer, consistent with downward band bending in both layers, which is incompatible with a simple charge transfer process, but indicative of complex interface chemistry.292 A closer examination of the HaP/MoO3 interface chemistry and concomitant band bending in the perovskite was obtained by evaporating MoO3 either directly on a pristine MAPbI3-xClx surface or on the surface protected by an ultrathin (∼3 nm) evaporated spiro-OMeTAD buffer layer.188 The UPS measurements of the incrementally grown MoO3 on top of the pristine HaP film are presented in Figure 37c and confirm the key findings from Wang et al., i.e. an interface dipole is formed and interface states in the gap below the conduction band edge (onset at 0.2 eV below EF) in the MoO3 suggest a pronounced interfacial charge transfer and undercoordination of the molybdenum atoms. In contrast to previous findings, XPS measurements reveal a significant upward band bending in the HaP layer underneath the growing MoO3 overlayer. Examination of the Mo 3d core level for the 1.5 Å thin MoO3 film (Inset in the right panel of Figure 37d) yields more insight into the details of the chemical reaction at the HaP/MoO3 interface. The emergence of Mo4+ states are evidence for a reduction of the overlayer to MoO2 and can chemically be explained by a Pb2+ → Pb4+ oxidation and/or 2I− → I2 oxidation accompanying the Mo6+ → Mo4+ reduction. A summary over the energetics of the resulting interface is given in the energy diagram in Figure 37e. Note that the spatial extent of band bending in the HaP film, starting at the HaP/MoO3 interface, cannot be further quantified in this measurement. While the magnitude of the Fermi level shift towards a mid-gap position at the immediate contact is well determined (∆E = 0.5 eV), no further information is gathered with respect to the width and progression of the depletion zone into the bulk of the MAPbI3-xClx film. Since the HaP film on a TiO2 substrate is generally found to be n-type,37,38 the scenario presented here could differ from the case of HAT-CN grown on the MAPbI3/PEDOT:PSS samples discussed in section C.2.1..190 In the latter case, the strong electron acceptor HAT-CN neutralized Pb0 surface states of the HaP, returning the film to flat-band condition. In the MoO3/MAPbI3-xClx/TiO2 layer 122 stack presented here, however, the HaP film would undergo band bending, bringing the Fermi level closer to mid-gap at the interface with MoO3. The energy diagram for the MoO3/spiro-OMeTAD/MAPbI3-xClx/TiO2 system featuring a ∼3 nm thick evaporated spiro-OMeTAD buffer layer between MoO3 and HaP is captured in Figure 37f. Interestingly, one observes the same band bending as in the previous case, but the reduction to MoO2 at the interface is successfully inhibited, as evidenced by the XPS Mo 3d core level analysis.188 Hence, the shift of EF at the HaP interface appears mainly driven by the high work function of the MoO3 film. Note that the oxide is still sub-stoichiometric (Mo5+ alongside Mo6+ species) at the interface, as charge transfer to the adjacent organic/MoOx bi-layer takes place. However, when used in PSC devices, neither configuration improves the device parameters. Both interfaces lead to a significant deterioration of the performance, even though the ultrathin organic buffer helps mitigate interfacial charge carrier recombination. This situation underlines the point that, despite an energy level alignment that would nominally be favorable for carrier extraction at a PSC interface, the formation of interface defects plays a detrimental role in terms of device engineering. For comparison, in a more exotic device layout, the approach has been demonstrated to facilitate a narrow depletion region in a lateral perovskite heterostructure, i.e. via modulation doping on TiO2/MoO3 heterojunctions.293 The results further explain why no prominent example for a high- performance PSC can be found that comprises an intimate HaP/MoO3 contact. Nonetheless, MoO3 can be employed successfully if well separated from the HaP layer in the device layout, but then rather serves a role to improve injection at the organic CTL/electrode interface or as a moisture barrier to improve the device stability.77,294,295 Chemical reactivity in oxide overlayer growth processes: 123 More generally, the application of oxide CTLs, which additionally protect against external stresses (mostly moisture) on the HaP layer, found more wide spread application, but usually requires a physical barrier (i.e. an inert organic layer) to the underlying HaP layers.264,296 Aside from the reactivity of the oxide film, a major difficulty lies in finding deposition methods that are compatible with the HaP layer. Notable exceptions, including "soft" growth approaches such as low temperature evaporation, have been applied. Zardetto et al. give a comprehensive account on oxide thin film growth by atomic layer deposition (ALD) on HaP surfaces.297 The ALD process relies on self-limiting reactions between the substrate surface and an organometallic precursor in the first half-cycle, and a co-reactant, often referred to as oxidizer in the second half-cycle. The oxidation in this second half-cycle can be done by H2O in a thermal ALD process or induced by an oxygen plasma in case of plasma-enhanced ALD (peALD).298 The self-limitation of the growth and purging steps in each cycle enable a high level of control and accuracy for the thickness of the deposited layer. Key to this deposition method is the ability of the forming film to anchor to the substrate surface. While growth is usually well-behaved on an OH-terminated surface, such a scenario is seldomly found for most exposed HaP films (see section B.1.). Instead, the AX-terminated surface of the ABX3 HaP could be subject to reactions with the oxidizer. In their study, Zardetto and coworkers attempted the deposition of various transition metal oxide layers, grown by peALD on MAPbI3 and investigated the resulting chemistry by XPS (see Figure 38).297 In a first pass, they compared the growth of 60 ALD cycles (about 6 nm) of Al2O3 from a trimethyl aluminum (TMA) precursor, either reacted with H2O or reacted at low-temperature in an O2 plasma (i.e., in peALD). In both cases, an AlOx film was formed, but for the peALD-treated sample, no nitrogen signal of the underlying HaP was detected, indicating that the first layer of the MAPbI3 film had decomposed. Such reaction was limited to the HaP surface layers, presumably 124 during the growth of the first 2-3 cycles as the XRD patterns reveal only a small change in the intensity ratio of the observable crystalline fractions of PbI2 to MAPbI3. This reaction was expected given the known decomposition of MAPbI3 by reactive oxygen species (see section B.1.2.), and could be further proven for peALD growth of other metal oxide (TiO2, NiO and, MoO3) films on MAPbI3.297 The XPS analysis of these oxide / HaP interfaces is shown in Figure 38. The peALD film growth from titanium isopropoxide (TTIP), Bis(ethylcyclopentadienyl)nickel(II), Ni(C5H4C2H5)2, and bis(tert-butylimido)-bis(dimethylamido) molybdenum, (NtBu)2(NMe2)2 precursors, led to a similar finding as in the deposition of Al2O3. However, in addition to the disappearance of the volatile nitrogen species and reaction products from the MA moiety, a signature peak related to oxy-iodo species emerged in the high binding energy range of the I 3d core level scans. Another attempt was made to grow ZnO from a diethyl zinc precursor and water as co- reactant. However, no persistent layer growth was achieved until after 100 cycles, attributed to the high Figure 38 -- XPS analysis of transition metal oxide layers grown by peALD on MAPbI3. (a,d) Ni 2p, Mo 3d, Ti 2p, and Al 2p core level regions. (b,e) N 1s core level region showing the loss of nitrogen, and hence MA. (c,f) I 3d core level region with oxy-iodo (I-O) species forming for all oxide-coated MAPbI3 samples except for Al2O3. Color code for the curves remains the same throughout all figure panels: pink, MoO3; purple, NiO; blue, TiO2(TTIP), yellow, TiO2(TMA), black, MAPbI3 reference. Reproduced from Ref. 2017 with permission from The Royal Society of Chemistry. 125 reactivity between ZnO and MAPbI3, which was already reported for MAPbI3 growth on ZnO surfaces in terms of a thorough deprotonation of the MA+ anion.243 Separating the damage to the HaP surface resulting from the growth process itself and from the general reactivity between the two compounds, the oxide and HaP, becomes very difficult. In fact, the two processes remain entangled for most oxide layer growth on HaPs -- even for the gentle evaporation of MoO3 -- as the precursor phases of the respective oxides, and in particular the oxidizing agents, react with the HaP surface. In the case of MAPbI3, this can be seen by the deprotonation of MA, formation of PbOx (which is not straightforward to distinguish from other Pb2+ species within the resolution limit of most XPS experiments) and even to the extreme case of forming iodates and related metastable compounds under strongly oxidizing conditions. C.2.3. Conductive carbon transport layers As an alternative to semiconducting organic or oxide charge transport materials, conductive carbon-based CTLs, such as carbon nanotubes (CNT) or graphene, carry the promise to combine mechanical and chemical robustness, with tailor-made optoelectronic properties (high conductivity and optical transmittivity). Their successful implementation in HaP devices, first and foremost in PSCs, has been demonstrated and documented in mini-reviews for carbon nanotubes CTLs,265 as well as graphene layers.266 Aside from their use in these nanomaterial formats, conductive carbon electrodes have been produced directly from carbon ink on HaP photoabsorbers to engineer HTM-free PSC layouts.267 Yet, despite the successful use of a large swaths of carbon-based CTL materials and production routines for device fabrication, energy level alignment and chemical reactivity at HaP film interfaces was explored only for a few selected systems. 126 CNT / HaP interfaces: The first instances of implementation of CNTs in HaP devices were realized in conventional PSC device layouts, where the CNT layer was deposited on the HaP and served to form an HTL. Li et al. laminated a free-standing CNT film from a floating catalyst chemical vapor deposition method (Figure 39a).299 Habisreutinger et al., on the other hand, used single walled carbon nanotubes (SWCNT) functionalized (i.e., individually wrapped) by the hole conducting polymer poly(3-hexylthiophene-2,5-diyl) (P3HT) in a spin-coating process and sealed the HTL by infiltrating PMMA into the SWCNT network after deposition (Figure 39b).300 Interface formation and energy level alignment at the CNT/HaP interface were reported via PES measurements as part of an incremental growth study, in which semiconducting SWCNT films as thin as 2 nm (0.5 monolayer) were deposited by ultrasonic spray coating onto a MAPbI3/TiO2/FTO/glass sample.301 Prior to deposition, the SWCNTs were wrapped by a bis(pyridine)-functionalized polyfluorene- based conjugated polymer (PFO-BPy) and sorted to be exclusively of (6,5) chirality, leading to a unique identification of valence band features in the UPS measurements shown in Figure 39c. Similar results were eventually obtained for laser-vaporized purely semiconducting SWCNT of varying chirality. The energy level alignment, projected from these measurements and summarized in Figure 39d, deviates substantially from the cases observed for organic semiconductor CTLs grown on HaP films. A small interface dipole seems to form and the Fermi level in the SWCNT layer, which is nominally intrinsic (or even slightly p-type) as seen for the reference sample on Au, is shifted closer to the CBM (C1 in Figure 39d) at the direct MAPbI3/SWCNT interface. As the SWCNT layer thickness is increased, band bending is observed in the SWCNT film, which leads to a concomitant change in the vacuum level position. The effect can be explained by n-doping of the SWCNT at the immediate interface by (methyl)amine species from the HaP film. The XPS results in the study corroborate that no band bending occurs in the underlying MAPbI3 layer, i.e. the Pb and I core levels remain fixed while the C and N signature of the SWCNT and co- polymer follow the band bending deduced from the UPS measurements. However, the mechanism of the 127 interfacial doping of the SWCNT is not captured in the XPS data alone; a conjecture would be that excess methylamine on the surface could act as dopant, whereas the electronic structure of the MAPbI3 film Figure 39 -- (a) Schematic of a PSC with free-standing CNT film as top electrode. Reprinted with the permission from Ref. 299. Copyright 2014 American Chemical Society. (b) Schematic of a PSC with a spin- coated HTL of P3HT-coated SWCNT and subsequent PMMA sealing. Reprinted with the permission from Ref. 300. Copyright 2014 American Chemical Society. (c) UPS data showing secondary electron cut-off and valence band region (inset in semi-log scale) of SWCNT layers deposited on MAPbI3 by ultrasonic spray coating. V1-V4 denote valence band features (Van-Hove singularities) of the SWCNT with uniquely (6,5) chirality. (d) Energy level diagram of SWCNT on MAPbI3 and reference SWCNT layer on Au (right). (e,f) Transients of absorption spectra of MAPbI3 films with and without SWCNT layer of (e) the S11 transition in the SWCNT film and (f) ground state bleach in the MAPbI3 film. Reprinted with the permission from Ref. 301. Copyright 2016 American Chemical Society. 128 remains unperturbed.301 The interfacial energy level alignment and band bending in the SWCNT layer have direct implications on the charge carrier transfer across the SWCNT/MAPbI3 interface. Transient absorption spectroscopy data are presented in Figures 39e and 39f, for the singlet (S11) excitation on the SWCNT, which is accompanied by a trion state (X+, in Figure 39e) and the ground state bleach of the band gap absorption on the MAPbI3. The ground state bleach recovery of MAPbI3 occurs much faster with the SWCNT transport layer deposited on top than without, indicating that photoexcited carriers are efficiently extracted. On the other side of the interface, populating the S11 state occurs on the same timescale, which lets us assign the accelerated ground state bleach recovery to hole transfer onto the SWCNT film. The configuration was further tested in PSC devices, for which a thin SWCNT interlayer sandwiched between the MAPbI3 absorber layer and a conventional spiro-OMeTAD HTL led to enhanced device performances.302 The overall improvement is based on a combination of faster charge extraction through the SWCNT HTL, suppressed back- recombination due to the band bending in the HTL, and concerted enhanced electron extraction through the TiO2 interface at the backside, which was evidenced by time-resolved microwave conductivity measurements. With respect to a generalization of the conclusions regarding the energy level alignment at the CNT/HaP interface, many open topics remain to be addressed: (i) the interaction with other HaP surfaces, in particular with purely inorganic HaPs featuring a higher density of surface states, (ii) the energy level alignment for metallic and multi-walled CNTs, (iii) the impact of the deposition process (solvent, temperature), even though reference samples indicate only minor changes to the MAPbI3 surface,301 and (iv) the role of the co-polymer wrapping. In the case presented here, the energy levels of the PFO-BPy are thought to be well outside the gap of the SWCNT transport levels. Yet, we cannot rule out, that the polymer plays a role in the energy level alignment and interfacial chemistry between SWCNT layer and HaP film. 129 Graphene / HaP interfaces: To date the use of graphene as a top CTL on HaPs had been explored in only a few studies. Most notable examples are the realization of PSCs with graphene oxide (GO),303 or thiolated nanographene as top HTLs.304 Similar to the use of CNT HTLs, devices with graphene-based HTLs worked reasonably well, i.e., performance parameters were comparable to those of state-of-the-art devices using organic HTLs at the time. However, there are no detailed experimental studies that elucidate the electronic level alignment at HaP/graphene interface. Energy level diagrams, usually assuming vacuum level alignment, suggest the absence of any hole extraction barrier, as the IE of the graphene-based compounds, used in the studies, is expected to be on the order of 5.2 for reduced graphene oxide,303 and 5.3 eV for thiolated nanographene (perthiolated tri-sulfurannulated hexa-peri-hexabenzocoronene with twelve 4-t-butylphenyl groups).304 This is compatible with efficient hole extraction when compared to organic semiconductor HTMs (see section C.2.1.), but these numbers disregard the energy level alignment processes as evidenced, for instance, for interfaces between HaPs and CNT-based HTLs.301 Thus, the following example indicates that the chemistry at the HaP/graphene interface is complex and can easily dominate the electronic energy level alignment: Acik et al. grew MAPbX3 (X = I,Br,Cl) layers, by spin-coating, on a 3-5 layer thick GO film on quartz or on SiO2 on Si, and compared these samples to MAPbX3 films, directly grown on SiO2/Si substrates.305 They adjusted the MAPbX3 layer thickness to be a few 100 nm for a structure and morphology analysis (an example of a MAPbBr3/GO sample is shown in Figure 40a,b), and modified the spin-coating procedure to fabricate 10-20 nm thick MAPbX3 films to enable probing the interface region via FTIR and XPS. The most striking finding from the structural analysis -- in particular XRD measurements as shown in Figure 40 -- is that the MAPbX3 growth is strongly dependent on the choice of the X anion in the HaP: while nucleation of MAPbBr3 occurs readily, the yield for MAPbI3 is very poor and only happens in a very narrow temperature window. In the study, these differences are linked to the reactivity at the 130 GO/MAPbX3 interface, with H2O (here: adventitious) playing a dominant role as a mediator. FTIR and XPS data for MAPbI3 growth on GO (Figure 40e-k) were used to examine the interfacial reaction and compare Figure 40 -- (a) Photograph and (b) SEM image (magnification) of MAPbBr3 grown on GO. (c) Potential reaction schemes of the MAPbX3 precursors with GO. (d) XRD pattern showing inhibited MAPbI3 formation. (e) FTIR spectra. (f-k) XPS Pb 4f and I 3d core level spectra for MAPbI3 grown on (f,g) SiO/Si, (h,i) GO/SiO/Si at room temperature, and (j,k) GO/SiO/Si annealed to 130 °C. Reproduced from Ref. 305 with permission from The Royal Society of Chemistry. 131 the resulting films to pristine MAPbI3 films formed on SiO2/Si (Figure 40f,g). The IR spectra reveal the presence of (HCO3 -):(H2O)n clusters and Pb(CO3)2 up to temperatures as high as 150 °C, and are consistent with the XPS data of films annealed to 130 °C. Acik et al. suggest that the occurrence of Pb(CO3)2 species can be explained by the reduction of the GO substrate driven by the MAI and PbI2 precursors in an highly acidic environment, caused by HI by-products. Iodide anions are readily hydrated -- e.g. through traces of water and oxygen in the precursors -- and can subsequently react with the epoxides and hydroxyl groups on the GO surface in an exothermic reaction occurring at room temperature, according to their Gibbs free energy calculations.305 This mechanism prevents the growth of MAPbI3 on GO, while the lead carbonate by-products are formed. The proposition is summarized in the following reaction schemes: 2 Pb(s) + O2(aq) + 2 CO3 2- (aq) + 2 H2O ↔ 2 PbCO3(s) + 4 OH- (aq) Pb2+ (aq) + I3 - (aq) + 2 H2O ↔ PbO2(s) + 3 I- (aq) + 4 H+ (aq). In these equations, solid compounds and precipitates are denoted with an index (s), whereas species in aqueous solution are indexed by (aq). Acik et al. conclude that the combination of a GO surface with a hygroscopic environment would lead to poor HaP film formation, but found it to be less dominant, the faster perovskite film nucleation occurred (e.g. in the case of MAPbBr3). If we now translate these findings to graphene oxide layers deposited on top of HaP surfaces, we can project that chemical driving forces for HaP dissociation are not only detrimental for long term stability, but will also dominate any energy level alignment process. From an application perspective, a mitigation of this effect could be achieved if the reactivity was decreased, for instance by employing reduced graphene oxide (rGO) films as electrodes.266,305 C.3. The metal/HaP interface 132 Aside from selected rare examples, such as the conductive carbon electrodes in the previous section, metal contacts are ubiquitously employed in HaP-based devices at the cell terminals. The perovskite film is often sandwiched between semiconducting CTLs and is not in direct contact with the metal layer. However, various scenarios exist that make the metal/HaP interface an important subject for dedicated investigations: • Extrinsic species migration (e.g. from the metal electrode) can occur through the CTL towards the HaP film. This also includes migration and accumulation of dopants from the CTLs such as Li+ in spiro- OMeTAD to the CTL/HaP interface.113 • Pinholes can form in the semiconducting CTL, potentially leading to direct physical contact between adjacent metal and HaP films. • By design, device layouts might omit the CTL and directly implement the metal electrode on top of the HaP film, e.g. to reduce fabrication costs. One of the earlier examples for this geometry has been the "HTM-free PSC", for which a gold contact was directly evaporated on top of a MAPbI3 film (see Figure 41a).306,307 In the following, we will mostly focus on the latter case, the deliberately designed HaP/metal contact, which allows for the most straightforward attribution of the energy level alignment and potential chemical reactions. Not mentioned in the three cases presented above is a fourth category: migration of the individual components of the HaP film and its decomposition products to the metal electrode. This scenario does not well represent a true HaP/metal interface, since it is unlikely that intact HaP fragments would migrate through the CTL to the metal layer. However, gaining insight into the reactivity of the individual HaP constituents with the metal is helpful to understand the chemical process(es) at well- defined HaP/metal interfaces. From a technological perspective, however, this case of migrating halide anions could be even more relevant as it pertains to one of the most prevalent degradation mechanisms 133 that could lead to device failure. Especially iodine species can diffuse towards the electrode and corrode the metal film by oxidizing it, which is well documented for Ag and Al electrodes.189,295,308,309 The complexity of the HaP/metal contact can be estimated from capacitance voltage (C-V) measurements of the "HTM-free" device as demonstrated by Huang et al. for a TiO2/MAPbI3/Au layer stack (Figure 41b-d).310 They simulated a physical model to fit the C-V data and found good agreement between experimental data and a fit for which the HaP film in the model was assumed to be n-type and a strongly n-doped region was introduced in the MAPbI3 layer at the Au interface. The physical nature of the interfacial layer was not specified, but might be related to metallic-like surface states and charged species as discussed for the organic and oxide overlayers in sections C.2.1. and C.2.2. In equilibrium, the model suggests type inversion in the MAPbI3 film induced by charge transfer from the Au overlayer, as in an idealized Schottky-contact between a metal and a semiconductor. Furthermore, Huang et al. calculate that the highly doped interfacial layer would reduce the built-in field and hence Voc of a device. This leads them to project that the solar cell characteristics could be improved by minimizing the impact of the Figure 41 -- (a) Schematic of an "HTM-free" PSC configuration with Au top contact. Reprint from ref 307. (b) TiO2/MAPbI3/Au layer stack used in capacitance-voltage (C-V) measurements. (c) Experimental C-V data (black line) and model fits (dashed lines) for assumed n- or p-type hybrid organic-inorganic perovskite (HOIP) films, with and without the assumption of an interfacial depletion layer (IF). "Stage I" and "Stage II" indicate regimes of carrier depletion at high voltages above the transition "Point A". (d) Corresponding static band alignment (top panel) and potential profile (bottom panel). Reprinted figure with permission from Ref. 310. Copyright 2017 by EDP Science. 134 interfacial layer, while enhancing the inversion in the cell, i.e. by raising the work function of the metal layer.310 Interestingly, a related scenario was demonstrated in a different instance without a direct HaP/metal interface, but with a thin (< 20 nm) layer of the organic HTM 4,4′-Bis(N-carbazolyl)-1,1′-biphenyl (CPB) between a MAPbBr3 film and metal top contact in an FTO/TiO2/MAPbBr3/CBP/metal cell.311 In this study, Kedem et al. used metals with different work functions (Pb: 4.2 eV, Au: 5.1 eV, Pt: 5.6 eV) and found via SPV and EBIC measurements the work function to be strongly correlated to the device parameters, explaining this by charge transfer from the metal through the organic HTL to the HaP film to bring the layer stack in thermodynamic (electronic) equilibrium. As a result, the energy bands in the MAPbBr3 film remain flat for the Pb top contact, while the high work function metals Au and Pt invert the HaP layer, which becomes p-type except next to the TiO2 ETL, i.e., a p-n homojunction is formed.311 C.3.1. Chemical reactions between metal film and HaP Energy level alignment and chemical reactions at HaP/metal interfaces have been investigated via PES measurements for various combinations of HaP films and top metal layers. We begin with the Au/MAPbI3 interface, as gold contacts are among the most relevant study systems due to their ubiquitous use in HaP- based devices. No strong chemical reaction is expected, in view of the chemical inertness of Au, corroborated by earlier experiments, such as growth of several monolayer thin, intact MAPbI3 films on Au (see section B.2.),100 or through the formation of ohmic contacts in Au/MAPbBr3/Au devices.312 We will find later that this hypothesis is not valid under all circumstances. Liu et al. incrementally deposited Au layers on MAPbI3 films and monitored energy level positions in the HaP film and the Au overlayer with a combination of UPS/XPS experiments.313 The results are illustrated best with the Pb 4f and Au 4f binding energy positions, respectively, as shown in Figure 42a,b. As the first 135 Au sub-monolayer (0.5 Å) is deposited, the Pb core levels shift to higher binding energies, then gradually shift back towards lower binding energies with increasing Au film thickness. The Au core levels shift slightly to lower binding energies by about 0.4 eV over the first 3 Å. Liu et al. suggest that this shift can be interpreted as charging of the Au particles until an interconnected layer is formed, as the Fermi edge in the UPS data follows the same trend.313 Interestingly, this trend does not correspond well to Huang's Figure 42 -- XPS data for metal layers deposited on HaP films. (a) Pb 4f and (b) Au 4f core levels for incrementally grown Au layers on MAPbI3. Note that the color coding between the two plots is not matched for each gold overlayer thickness. Reproduced from Ref. 313 with permission from the PCCP Owner Societies. (c) Pb 4f and (d) Al 2p core levels for 5, and 50 nm thick Al layers on MAPbI3. (e) Pb 4f core level for a set of various metal films deposited on either, CsPbBr3, CsPbI3, MAPbI3. Reprinted with the permission from Ref. 189. Copyright 2016 American Chemical Society. 136 conjecture that for the n-type MAPbI3 layer with the strongly n-doped interface layer, the Fermi level is shifted towards a mid-gap position, while a strongly p-type region forms at the Au/MAPbI3 interface once the contact to the Au is established.310 Instead, the scenario that Liu et al. encountered could point to the initial formation of charged surface states, similar to those proposed by Zu et al. for HaPs with a high concentration of Pb0 at the surface,164 with subsequent formation of a Schottky contact, i.e. upwards band bending in the HaP film towards the interface with the Au layer, if the initially formed surface states were donor-like. No further evidence of an interfacial chemical reaction was apparent from the XPS data, except that the HaP film closer to the interface, i.e. at higher Au coverage, appears more lead-deficient than deeper in the volume, i.e. compared to the measurement without the top Au layer and hence less attenuation of the PES signal.313 We note, that a more direct experimental assessment and conditioning of the interface appears to be required to establish a conclusive picture. A different picture is envisioned for the Al/HaP interface, for instance for metallic Al evaporated on a TiO2/MAPbI3 sample. XPS data in Figure 42c,d reveal a redox reaction in which Pb2+ is reduced to Pb0 , while Al is oxidized.189 Notably, the reaction occurred spontaneously in vacuum without further external stresses such as light, moisture or oxygen. Zhao and coworkers further tested their hypothesis on redox chemistry between the metallic cation, Pb2+ and a neutral metal film for other HaP/metal interfaces and found reduced Pb for Al deposited on CsPbI3 and CsPbBr3, as well as for Yb and Cr layers deposited on MAPbI3 (Figure 42e). In case of Ag on MAPbI3, the Pb0 concentration was significantly smaller than in the case of the (Y,Cr,Al)/HaP interfaces and essentially disappeared for the Au/MAPbI3 interface. However, Zhao's spectra of the Au/MAPbI3 interface differ significantly from those by Liu et al., who did not find evidence for any redox reaction products.313 In contrast to that, Zhao et al. find shoulders at slightly lower binding energies in the Pb core levels and suggest that this finding could be attributed to partial charge transfer at the HaP/Au interface.189 Importantly, the reaction partners in the HaP for the redox chemistry 137 with the deposited metal species are the B-site metallic cation (here Pb2+) and the halide anion (X-) and not the A-site cations. The origin of the discrepancy between various studies remains unclear but could be linked to experimental details. First, the HaP layers could exhibit different stoichiometries and surface terminations, which would be more or less likely to undergo or promote a redox reaction, i.e. organic surface terminations (MA, FA, …) could act as a buffer layer. Second, as in the earlier section C.2.2. on the HaP/semiconductor interfaces, measurement conditions (i.e. light bias, X-ray intensity) might be substantially different and induce changes in the HaP film through desorption or drive the redox reaction via photovoltage. C.3.2. Metal ion migration and diffusion barriers The case of a (partial) redox reaction observed at the MAPbI3/Au interface presented above hints to the fact that an HTM-free contact in this configuration would be metastable and at least pose a challenge for the long-term stability of the HaP device. Hence, even with an organic HTL as buffer between Au electrode and HaP absorber, the scenario of Au migrating to the HaP film could lead to a degradation of the device functionality and thus chemically inert Au electrodes could prove problematic for devices. Domanski and coworkers investigated the migration of Au into an FA1-x-yMAxCsyPbI3-zBrz film through a spiro-OMeTAD HTL in a conventional PSC device configuration, by performing ToF-SIMS measurements of cells before and after operation.110 In their case, aging at elevated temperatures (75 °C) led to more pronounced performance degradation than aging at moderate temperature (20 °C). While no macroscopic structural or morphological changes were seen for the HaP film itself, the ToF-SIMS measurements done on the sample aged at high temperatures (here: 70 °C) revealed that gold had migrated to the bottom of the HaP layer down to the TiO2/HaP interface, which was not seen in a control sample or in another sample aged at 30 °C.110 138 In order to limit Au diffusion into the HaP film, Domanski et al. applied a thin chromium layer between the HTL and the Au electrode. They further suggested that the addition of a metal oxide diffusion barrier (e.g. Al2O3) could further inhibit metal migration and hence improve the cell stability. Similar strategies have been proposed to overcome ion migration in the other direction, i.e. mobile halide species that could first migrate into the HTL and then into the metal electrode. As laid out in the previous sub-section, this would lead to strong redox chemistry and finally to complete corrosion of the metal film. This can be prevented by introducing a thin protective layer between HTL and metal electrode. While highly reactive with an adjacent HaP film (see section C.2.2.), even MoO3 can fulfill this role, as demonstrated for thin MoO3 layers sandwiched between spiro-OMeTAD HTL and metal top electrodes.294 Sanehira et al. demonstrated that the MoO3 layer between the HTL and a Ag or Al electrode formed dense and stable AgOx or AlOx layers that inhibit the diffusion of reactive halide species into the electrode.295 Preventing metal migration through the HTL into the HaP, e.g. by reduced graphene oxide between HTL and Au electrode,76 proved to be a successful strategy to mitigate the interface formation. C.4. Passivation strategies at the HaP top interface The previous sections, which describe the growth of functional thin films on HaP layers, demonstrate that the energy band alignment depends on many subtle aspects of the interfacial chemistry and can lead to pronounced band bending in the perovskite layer, e.g., in case of HaP/oxide interfaces. Hence, similar to the earlier discussion on the substrate/HaP interface (section C.1.4), we need to consider strategies to passivate trap states and inhibit chemical reactions at the top HaP/CTL or HaP/electrode interface. As mentioned in the introduction, interfacial electronic states and recombination processes are major considerations when quantifying operational parameters of HaP-based devices,69 although this view does 139 not fit well with assessments that HaP surfaces are relatively inert, compared to those of inorganic semiconductors such as III-V compounds. One likely reason for the low carrier recombination at exposed HaP surfaces is the preferential termination with an organic compound (e.g. MA or FA), and hence a closed shell electronic system without dangling bonds, thus exhibiting low trap state density; a feature that is also prevalent in organic semiconductor technologies such as in organic photovoltaics (OPV). This characteristic should be absent for purely inorganic HaPs, as suggested by the non-negligible trap DOS tailing into the band gap.101 Interestingly, even with HaP compositions featuring mixed Cs and organic cations on the A-site, the tendency for an organic surface termination is maintained. This is also apparent for CsPbI3 quantum dot systems, which despite their nominal inorganic composition are usually capped with organic anionic ligands that can be exchanged in tailored ligand exchange reactions to achieve an FA surface termination, for instance.78 -- 80,314 At the same time, tailoring the organic surface termination can serve to make an organic-inorganic HaP film (surface) more robust and suppress surface recombination: by introducing a larger organic anion, such as butylamine or aminovaleric acid (HOOC(CH2)4NH2, on the A-site, similar to the example of sheet terminations in mixed 2D/3D compounds. Even for a system in which a long-chained or bulky A-site molecule is added in the precursor stage, phase segregation (e.g. of a 2D phase nucleating at the interface and a 3D bulk phase with the small-sized cation) can occur for the resultant film and lead to substantial enhancement of the passivation and long-term stability, presumably by suppressing chemical reactions.75 However, the structural analysis and microscopic identification of the molecules in the film is not straightforward. Hence, it remains unclear whether passivation effects can be attributed to passivation of the bottom interface with the substrate, the top surface, or grain boundaries in the film. It is particularly difficult to assess whether the additives result in better HaP crystallization and growth, or if residual additives in the film reduce non-radiative recombination. In the following, we choose a few selected examples, for which the passivation is thought to leave the film morphology and structure 140 unchanged, and which is thought to be localized mostly at the HaP surface or the top interface between HaP and CTL/electrode. We note that the nature of defect states in the HaP film and the mechanisms of defect passivation are complex and are treated in a separate review on the topic,31 which provides a comprehensive account of passivation and means to assess properties such as defect types and densities or recombination rates, determined experimentally with the support of theory. In the following we give only a few selected examples of passivated HaP interfaces. C.4.1. Self-assembled monolayer deposition on top of HaP Passivation of HaP surfaces can be achieved by coating the HaP layer with monolayers of organic molecules. A straightforward way to realize such a system is to first grow the pristine HaP film and subsequently apply the passivating layer on top. While procedures for self-assembling monolayer (SAM) growth on oxide surfaces (see section C.1.4.) have been well-established, grafting mechanisms for molecular layers on HaP surfaces had to be developed separately. One of the most promising ideas has been to form supramolecular compounds at the surface through a Lewis acid-base reaction as previously explored in many semiconductor fields.255,256 Abate et al. demonstrated this method for growing iodopentafluorobenzene (IPFB) on MAPbI3-xClx films as depicted in Figure 43a by immersing the HaP layers in a solution of IPFB.131 IPFB acts as a Lewis acid and binds to under-coordinated halide anions on the HaP surface. In this example, the IPFB treatment is applied immediately before the deposition of a spiro-OMeTAD HTL and completion of a PSC device. The effect is that hole recombination at that interface is reduced and the diode characteristic improved.131 141 This type of approach has been explored in several other instances -- and also for the passivation of other defect states. When describing the deposition of organic acceptor molecules (e.g. HAT-CN) on HaP in section C.2.1., we discussed the mechanism of passivating Pb surface defects on halide-deficient HaP surfaces, which act as donor states.190 Conceptually, the same goal can be achieved by applying an organic molecular layer, for example by spin-coating, on an HaP surface. Noel et al. used thiophene and pyridine molecules to passivate MAPbI3-xClx surfaces and performed TR-PL measurements on those samples (figure 43b).315 From the increase in PL decay time and quantum efficiency, they conclude that non-radiative recombination is decreased for the treated samples and propose that the molecules act as a Lewis base Figure 43 -- (a) Schematic of iodopentafluorobenzene (IPFB) anchored as a Lewis acid to a MAPbX3 surface with the undercoordinated X anion as Lewis base. Reprinted with the permission from Ref 131. Copyright 2014 American Chemical Society. (b) PL transients for MAPbI3-xClx films without surface treatment (top), thiophene surface treatment (middle) and pyridine surface treatment (bottom). The curves were fitted to a model described in Ref. 316 to derive the trap state densities NT. Reprinted with the permission from Ref. 315. Copyright 2014 American Chemical Society. (c) PL decay transients and (d) integrated PL intensity of MAPbI3 films treated with various surface modifications. Reprinted with the permission from Ref. 133. Copyright 2016 American Chemical Society. (e) Schematic of water adsorption on an MA-terminated (top) and a TEA-terminated (bottom) MAPbI3 surface. Reprinted with permission from Ref. 319. Copyright 2016 by Springer Nature Publishing AG. 142 and passivate under-coordinated Pb atoms. We note, that these optical measurements serve as a proxy to estimate trap state densities. In this case, the model fit, which considered dynamic interplay between free charges, excitons, and electronic sub-gap states for HaPs,316 led to the conclusion that trap state densities were reduced after the SAM treatment; thus, presumably these states are mostly at the surface of the HaP or at the interface with the subsequently deposited organic HTL.315 A more detailed and accurate identification of type, density, and spatial location of recombination centers in the sample can be refined by an adjustment of measurement conditions and model parameters.317 Further targeted experiments focused on the optical characterization of HaP films with and without surface treatment. 1,2-dithiol (EDT) was used by Stewart et al. to substantially reduce recombination in MAPbI3 nanocrystals, presumably by passivating lead-rich surfaces. Given that the occurrence of such lead-rich species at the perovskite surface is not necessarily common, it is suggested in the study that EDT might etch iodide-rich surfaces, thereby exposing lead-rich surfaces, onto which the molecules eventually bind.132 deQuilettes et al. expanded on similar experiments using trioctylphosphine oxide (TOPO), octadecanethiol (ODT), and triphenylphosphine (PPh3) as post-treatment modifiers for MAPbI3 films.133 The PL data are summarized in Figure 43c,d and follow the trend observed for the previously described surface treatments: PL decay time and integrated intensity increase, which points to a reduction in non- radiative recombination rates. For these samples, the character of a surface treatment without substantial percolation of the surfactant into the HaP film due to steric hinderance is evidenced by glow discharge optical emission spectroscopy, which probes the chemical depth profile. For instance, in case of the ODT surface treatment, sulfur was exclusively found at the sample surface. Additionally, chemical shifts in the solid-state NMR data (e.g. demonstrated for the phosphorous moiety for the samples treated with PPh3) revealed that the molecules donate an electron to the adjacent perovskite layer and hence would likely act as a ligand on the film surface.133 143 In the next iteration of this approach, molecules used as Lewis bases and serving as surface termination would not only improve the optoelectronic performance by passivating defect sites (in this case under- coordinated Pb atoms) in the HaP film, but also shield it from environmental stresses and mitigate chemical reactions that would otherwise cause decomposition and finally degradation. For this purpose, hydrophobic molecules can be employed, which reduce the uptake in moisture in the HaP film and inhibit the oxygen-induced degradation mechanisms. Generally, the atomistic molecular adsorption mechanism can be modeled in first-principle simulations of the HaP surface and the respective adsorbates. For instance, DFT calculations suggest that thiophene molecules preferentially anchor to the MAI-terminated MAPbI3 surface, while MD simulations with additional H2O molecules reveal the water-repellent properties of the so-modified HaP surface.318 The most obvious choice for this next iteration falls onto amine molecules with extended alkyl branches. Such decoration of MAPbI3 surfaces has been pursued with a range of large ammonium compounds, such as tetra-ethyl ammonium (TEA) and longer-chained tetra-alkyl ammonia,319 which preserve the valence with respect to the MA in the bulk HaP on the TEA adsorption site, while the long side chains prevent diffusion of extrinsic species. Aging studies then show that HaP films capped with TEA molecules withstand environmental impact, such as moisture ingress (see Figure 43e), while the unprotected films degrade into PbI2 due to a loss of MAI. This enhanced stability was predicted in DFT calculations and used to achieve higher and long-term stability in PSC devices.319 Adopted from the silicon solar cell playbook, where a thin insulating oxide or amorphous silicon layer is inserted between the intrinsic Si film and the highly doped Si or ITO contact, e.g. in the heterostructure with intrinsic layer (HIT) cell geometry, a thin buffer layer can also be incorporated between HaP film and CTL. Compared to earlier examples in which substitution of the surface MA moiety was explored, the absence of anchoring of this layer on the perovskite film promises to make it simpler than SAM growth, as lattice matching requirements between buffer layer and HaP are more relaxed. This approach has been 144 demonstrated in inverted devices with a thin insulating layer, e.g. polystyrene or fluoro-silane, between the perovskite and a C60/PCBM ETL.320 That study reports that insertion of this buffer layer between HaP and ETL increased the performance of PSCs, supposedly mainly by suppressing recombination, while at the same time serving as encapsulation to prevent moisture-related HaP film degradation. C.4.2. Inert oxide lamination We conclude this review by discussing other passivating materials than the ultra-thin organic surface modifiers presented in the previous section. More generally speaking, various encapsulation methods have been proposed to shield the completed PSC device from external factors, from basic early approaches using organic materials such as Surlyn,321 thermoplastic polymers with integrated adhesive,322,323 or ethylene vinyl acetate, which were shown to maintain higher PSC mechanical stability after thermal cycling than Surlyn encapsulation.324 As a promising alternative to these organic encapsulants, amorphous TiO2 or SnOx layers made by atomic layer deposition (ALD) have been used as barriers against moisture infiltration in PSCs.325,326 A similar use could be attributed to ALD-Al2O3 coatings, which have shown high versatility, being grown over both hydrophilic and hydrophobic substrates, and tuned to present either hydrophilic or hydrophobic surfaces themselves.327 ALD-Al2O3 films provide good optical transmittivity, which is a requirement for many PV device configurations and exhibit water vapor transmission rates on the order of 1x10-6 g m-2 day-1. However, those films are typically obtained from trimethylaluminum (TMA) and water as precursors, at high process temperatures (80 - 300 °C),328 i.e., close to or well above "safe" PSCs processing temperatures. Consequently, several of these protocols need to be modified and adapted to PSC encapsulation. One of the first examples was demonstrated by Kim and Martinson, who compared different precursors and 145 procedures for ALD- Al2O3 coatings directly on MAPbI3-xClx for deposition temperatures around 100 °C.329 Their results (Figure 44a) show that at these elevated temperatures any combination of TMA and ozone or water as oxidizer would result in a discoloration of the HaP layer and hence degradation. This situation was eventually corrected by using a non-hydrolytic low temperature process with aluminum Figure 44 -- Oxide lamination of HaP films by ALD. (a) Photograph of MAPbI3-xClx films with and without ALD overlayers: first row -- plain, second row -- with O3 treatment and AL2O3 from (O3/TMA); third row -- H2O treatment, Al2O3 from (H2O/TMA), and TiO2 from (H2O/TMA); fourth row -- Acetic acid (AA) treatment, AL2O3 from (AA/AIP), and TiO2 from (AA/TTIP). HaP film degradation is avoided for non-hydrolytic processes using isopropoxides and AA precursors. Reproduced from Ref. 329 with permission from The Royal Society of Chemistry. (b) Cross-section TEM image of a MAPbI3/ALD-Al2O3 (0.8 nm)/spiro-OMeTAD layer stack and (c) elemental profiles from the EDX analysis of the area, marked in (b). Reproduced from Ref. 331 with permission from The Royal Society of Chemistry. (d) Synchrotron-based surface sensitive and (e) lab-source-based XPS measurements of the Pb core level region for MAPbI3/ALD-Al2O3(∼2.8nm) interfaces. Reprinted wih the permission from Ref. 332. Copyright 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. (f-h) XPS core level analysis of MAPbI3/ALD-Al2O3(∼2nm) interfaces. Reproduced from Ref. 333 with permission from The Royal Society of Chemistry. 146 triisopropoxide (AIP) and acetic acid (AA) as the oxygen source. A similar preservation of the HaP film was obtained by an analogous process to grow ALD-TiO2 from titanium tetraisopropoxide (TTIP).329 Around the same time, Dong et al. explored the introduction of a thin ALD-Al2O3 layer between MAPbI3 and HTL using O3, but found it to act as a strong oxidizer that degraded the perovskite and converted it to PbI2.330 This set of results is in line with our earlier remarks on the deposition of oxide CTLs on HaP films (section C.2.2.) by peALD.297 Clearly, the growth of an inert passivating oxide layer on HaP requires milder conditions than those used normally, to preserve the HaP surface and suppress the generation of defects as a result of interfacial chemistry. In a later study, Koushik et al. used an ultrathin (0.8 nm) Al2O3 layer deposited from TMA/H2O at 100 °C directly on an HaP film to make a hydrophobic tunneling insulating layer and enhance the air stability of a PSC in planar architecture.331 They confirmed the formation of a dense Al2O3 film by high angle annular dark field (HAADF) scanning TEM of a sample cross-section and verified by XRD that the ALD-Al2O3 layer prevents decomposition of the underlying bulk MAPbI3-xClx into MAI and PbI2. To elucidate the interface chemistry for ALD-Al2O3 growth on HaP films, Kot et al. performed XPS measurements on an ALD-Al2O3 layer (20 cycles, ∼2.8 nm), grown at room temperature from TMA and H2O precursors on MAPbI3.332 Measurements were taken at low excitation energy (ħω= 640 eV) at a synchrotron light source under a 45° take-off angle, and with a higher excitation energy Al Kα X-ray source (ħω= 1486.6 eV) at normal emission to increase the probing depth. The comparison of the more surface-sensitive Pb 4f core level spectra (via synchrotron source) with the larger probing depth signal (laboratory X-ray source) led to several marked differences (figure 44d,e). The former revealed a metallic lead component for the bare MAPbI3 surface, and the signature of a Pb-O bond following the application of the ALD-Al2O3 layer. Since this signature is absent in the data generated in the more sub-surface sensitive experiment, the authors assigned this contribution to a thin layer of PbOx at the HaP/Al2O3 interface.332 We note at this point that a clear discrimination between this effect originating from the ALD processing or from transient changes 147 to the film during the measurement remains difficult.160 The high X-ray flux of the synchrotron light source can lead to the formation of metallic Pb, similar to the white light illumination experiment performed by Zu et al.,164 and could thus induce chemical reactions between these newly formed species and any oxide overlayer, in particular if partially converted ALD precursors are still present at the interface. In a different study, Ramos et al. employed low-temperature (60 °C) ALD deposition to encapsulate completed PSC devices in a glass/FTO/TiO2/MAPbI3/spiro-OMeTAD/Au geometry, increasing the long- term stability of the device.333 They also investigated the direct deposition of ultra-thin (∼2 nm) ALD-Al2O3 layers on the glass/FTO/TiO2/MAPbI3 layer stack from the same fabrication procedure to investigate the influence of the ALD process on the HaP film, as it could occur either due to thermal stress during the ALD layer fabrication or through intimate contact of the precursors with the MAPbI3, e.g. at the sample edges or through pin-holes in the organic HTL/electrode overlayer. The Pb, I and N core level spectra, presented in figure 44g-h, give no indication of any new interface chemical species. However, the elemental Pb/I and Pb/N ratios revealed that, at higher processing temperatures (90 °C) in the ALD layer production step, the film became more iodine deficient, whereas the Pb/I ratio remained unchanged in the low temperature (60 °C) process, suggesting that MAPbI3 decomposes and volatile MAI species evaporate at higher temperatures. In summary, the encapsulation of HaP films with inert oxide layers with the objective of passivating defect states on the surface and protecting the perovskite from extrinsic chemical species seems to be possible, if the processing conditions to grow the oxide overlayer are sufficiently mild: no excessive temperature, no reactive oxygen species (e.g. ozone, O2-plasma), and no exposure to energetic radiation such as UV light. The requirement to run a low-temperature process is directly linked to the evaporation of volatile components in the HaP composition (especially MA and MAI) and could potentially be relaxed for purely inorganic perovskites such as Cs-based HaPs. However, the growth of oxide films on these inorganic HaPs 148 could present a different set of challenges as the A-site cation presumably does not present a closed shell electronic system and is thus prone to undergo oxygenation itself. D. Conclusion and Outlook In this review we introduced the role of interfaces for HaP-based semiconductors, elucidated the surface chemistry, and finally investigated the energy level alignment and interface chemistry between HaP compounds and the most prevalent materials used for charge transport, cell termination or interface passivation. The field of HaP-based optoelectronics experienced a significant surge in the past six years, during which the community was able to reach a considerable understanding of fundamental materials properties of the HaPs. However, one must concede at this point that the best candidates for adjacent transport layers did not follow clear-cut guidelines and -- quite frankly -- their choice is currently based on rudimentary scientific insight. One of the reasons is that we still lack a good description of the exact function of each component in the HaP material itself, and of their interplay regarding macroscopic physical properties such as electronic transport characteristics. This applies in particular to the bulk and surface defects, which are central to the main questions and topics of this review. From a theoretical view point, many credible yet contradictory findings on defect types and energies were reported for these materials. And from the experimental side, the unambiguous identification of defect types and properties has been very difficult, as already shown over the past decades for simpler and more stable semiconductor materials. Thus, we are presently in a situation where we cannot be sure that old and trusted models and approaches for defects remain applicable. With respect to interfacing the HaP absorber to CTLs, the recent research activities focused on assessing the impact of the electronic energy level alignment on the device functionality. Yet, this could only be pursued for the most common layer combinations due to the extensive and time-consuming nature of 149 these studies. The derivation of a set of universal guidelines on electronic level alignment for any combination of HaP film and CTL material faces a major obstacle directly from the onset: the chemical composition of the HaP film and surface, which remains mostly unknown and undisclosed, but could vary substantially between studies. Finding a clear set of standard starting conditions remains a major challenge, since the HaP layer can comprise highly volatile species, such as methylammonium, which could desorb easily, and mobile reactive ions, such as iodine, which can migrate and reconstruct the surface. The preferential surface termination of an ABX3 compound presented in the majority of literature reports, i.e. an AX-terminated surface, could hence be easily disrupted and lead to the exposure of under- coordinated B-site and X-site atoms as reaction partners for any adjacent functional material. On top, the complexity and instability of the surface conditions could change during most experiments that involve high fluences of radiation or electric fields, which makes it particularly difficult to rely on theoretical calculations for the interpretation of each experiment. Looking at the basic question considered in this review, i.e. if key optoelectronic functionalities of the HaP semiconductor device are determined or limited by the HaP interface, we must admit at this point that the response can only be ambiguous at best: yes, controlling the interface is central to obtaining the maximum optoelectronic performance and stability of HaP thin films, which translates into the requirement of tailored interfaces in HaP-based devices. However, to gain control over this set of parameters further research to understand and condition the interfacial chemistry is required, a goal that remains elusive due to the high degree of chemical complexity of the HaP film itself, which is at present beyond the complexity of technologically established semiconductor surfaces. D.1 Interface as a critical control parameter for HaP film properties 150 In spite of these difficulties, several findings can be used to inform us about the qualitative importance of interfaces and guide us to the next targeted interface studies. One of the most striking results from the various interface studies presented here is the apparent motion of the Fermi level in the HaP film as a function of the electronic structure of adjacent layers. Beginning with a change of the substrate underneath, EF in the HaP film can be found either close to the CBM or at mid-gap. This property could be related to the interfacial chemistry and the subsequent creation or passivation of defect states in the HaP film. The general rule, however, seems to be that growth of HaP films on oxide substrate leads to the unintended formation of a defective interlayer, which dominates charge extraction and recombination. That interface is thus also the principal locus for charge accumulation, ion migration due to the compositional gradient and chemical pseudo-capacitances due to chemistry between the substrate and the constituents of the HaP film that migrate to this interface. The key to solving hysteresis effects in PSCs and other HaP devices probably rests in understanding the charge and species exchange at the interface to the active HaP film. A similar scenario is observed, when other materials such as semiconducting CTLs or metal electrodes are grown on top of the HaP film. One can certainly state that the surfaces of the most regularly employed HaP layers are relatively inert compared to those of inorganic semiconductors (Si or III-V compounds). This property originates from the fact that in an organic-inorganic HaP, the surface termination likely corresponds to organic A-site cations without unsaturated bonds. However, because of the volatility of some constituents described above, surface defects and associated electronic states can form readily, and the surface can exhibit undercoordinated species with unsaturated bonds. This transition could also be reached during the deposition process of the overlayer, if the overlayer material is too reactive or the process conditions are too harsh. 151 Looking at organic CTLs, either deposited on top of HaP films or used as a substrate, one of the issues discussed earlier in this review is the correlation, or lack thereof, between the expected electronic level alignment at the interface and the performance parameters of a PSC device. Theoretically, the attainable photovoltage should be limited by the band offsets between the photoabsorber and the adjacent CTLs. We have seen, however, that the photovoltage is by and large independent of the mismatch between the energy band positions as long as the offsets are not too extreme to cause a carrier extraction barrier, in which case the diode characteristics are skewed and the fill factor collapses. This holds only true in part, since the presence of defect states at the surface of the HaP can change the band alignment significantly. It is also clear at this point that no unified picture has been established for the band alignment mechanisms between HaP layers and more exotic CTLs and electrode configurations, interfacing the HaP film to conductive carbon CTLs, metal oxide CTLs and metal electrodes. Processes at these interfaces are dominated by interface chemistry, which can come in many combinations of Lewis acid-base and redox reactions and dramatically change the interface composition as the interface is formed, over time or under stress through extrinsic catalysts, electric fields or light. Overall, the full implications of the interface energetics on recombination and barrier formation are convoluted with changes in the interface chemistry. At the same time, high mobility of some ions in the HaP film could even lead to a change in bulk properties, and therefore attempts to assess the related device physics only as a function of interface formation -- or even more narrowly in terms of the electronic level alignment at the interface -- remain somewhat futile or at least, premature. Thus, the challenge to formulate the desired energy band alignment between these electronically dissimilar compounds limits us in deriving useful guidelines for prospective HaP/CTL combinations. D.2 Interfacial Design meets HaP technology: Future research roadmap 152 Ultimately, the main path to further technological advances in the field of HaP-based optoelectronics is robust and durable passivation of interfaces and, hence, suppression of interface chemistry. To overcome the limitations in assessing the interface materials properties, we propose to expand the current body of work by focusing first on the fundamental electronic processes at the HaP surface and across interfaces to adjacent transport materials while constantly monitoring the chemical composition. Conceptionally, this can be achieved in an experiment by establishing operando measurement protocols, that track chemical and electronic information at the same time. We need therefore to develop reliable experimental methods that capture the most relevant physical properties (work function, defect density, etc.) and chemical properties (stoichiometry, oxidation states, etc.) pertaining to charge transport across the interface and at time scales compatible with the chemical processes that are associated with ion migration or desorption. This can most likely be achieved by combining advanced optical and electron spectroscopies/microscopies, to correlate charge carrier dynamics with the interface energetics and species formation. The focus of this endeavor should be on a precise measurement of interface energetics, energy barriers, and associated charge carrier dynamics (transfer and recombination rates). While doing so, we need to keep in mind that, due to the metastability of HaP-related interfaces, the measurement probes and parameters (light, bias, etc.) can cause chemical and structural reorganization of the interface, which needs to be taken into consideration when interpreting the results: what are potential precursors at the interface that would lead to the observed products and could such precursors be tracked qualitatively under less invasive measurement conditions (lowered flux)? Once these tools are developed, we could begin to establish more comprehensive models for electronic processes at these interfaces and correlate them to the device physics. This step would involve a broad screening of potential CTL materials beyond the classical organic semiconductor and transparent conductive oxides, while evaluating their interaction with the HaP film. The connection between the 153 atomistic picture of interface chemistry and the device functionality would require concomitant electrical measurements of the full device or sub-devices to verify the estimated charge carrier dynamics (i.e. transfer barriers and recombination velocities). Ideally, this device fabrication and characterization effort would be coupled in situ to the spectroscopic tools to achieve a hand-shake routine to countercheck the results. The next challenge would then be to use this set of methods to differentiate between effects driven by the interface chemistry, from those that originate from the bulk properties of (hybrid) HaP compounds. Only then could the HaP film stoichiometry and CTL interlayer choices be fine-tuned to meet the needs of electronic heterostructures in novel devices. This effort will require further characterization and analysis routines with variable depth resolution (such as synchrotron-based XPS and XAS methods) as well as synthesis routes for dedicated layer-by-layer grown model systems, e.g. through CVD or PVD processes with improved precision and reproducibility. We project that this avenue would lead the research community to a more comprehensive picture, that encompasses the atomistic origin of the electronic interaction and chemistry between the material systems as well as the energy band alignment effects on the electrical properties of the device. From a technological point of view, this gain in insight would deliver a better assessment for the choice of materials and guide synthesis routines and film processing, with the immediate goal of achieving more efficient and stable devices. In the long run, a better understanding of the interface chemistry in HaPs can be leveraged for novel electronic applications, e.g. in the form of HaP heterostructures. We stress that the insight gained from better understanding defect chemistry and carrier dynamics in such HaP heterostructures could enable novel technologies, such as hot-carrier solar cells, tunable quantum-well lasers, and room-temperature qubits. At the moment, however, our main focus is on determining a reliable assessment route of the interface chemistry, which dominates any electronic process across the interface. 154 ACKNOWLEDGEMENTS: P. Schulz thanks the French Agence Nationale de la Recherche for funding under the contract number ANR-17-MPGA-0012. D. Cahen and A. 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Energy Fuels 2018. https://doi.org/10.1039/C8SE00282G. 177 GLOSSARY: AFM: Atomic Force Microscopy ALD: Atomic Layer Deposition ARPES: Angle Resolved PhotoEmission Spectroscopy BG: Band Gap BZ: Brillouin Zone CB: Conduction Band CBM: Conduction Band Minium CNT: Carbon NanoTubes CPD: Contact Potential Difference CTL: Charge Transport Layer CTM: Charge Transport Material CVD: Chemical Vapor Deposition DLTS: Deep Level Transient Spectroscopy DSSC: Dye Sensitized Solar Cell DOS: Density Of States DFT: Density Functional Theory EA: Electron Affinity EF: Fermi Level 178 EQE: External Qunatum Efficiency ETL: Electron Transport Layer ETM: Electron Transport Material FA: Formamidinium FTO: Fluorine doped Tin Oxide FY-XAS: Fluorescence Yield X-ray Absorption Spectroscopy Φ: Work Function GGA: Greatest Gradient Approach GO: Graphene Oxide HAXPES: HArd X-ray PhotoEmission Spectroscopy IE: Ionization Energy IQE: Internal Qunatum Efficiency IPCE: Incident Photon-to-electron Conversion Efficiency IPES: Inverse PhotoEmission Spectroscopy ITO: Indium doped Tin Oxide HOMO: Highest Occupied Molecular Orbital HTL: Hole Transport Layer HTM: Hole Transport Materials LEED: Low Energy Electron Diffraction 179 LUMO: Lowest Unoccupied Molecular Orbital MA: Methylammonium MD: Molecular Dynamics PES: PhotoEmission Spectroscopy PL : Photoluminescence PSC: Perovskite Solar Cell rGO: reduced Graphene Oxide HaP: Halide perovskite QFLS: Quasi-Fermi Level Splitting QSGW: Quasiparticle Self-consistent GW SAM: Self-Assembled Monolayer SOC: Spin-Orbit Coupling STM: Scanning Tunneling Microscopy SWCNT: Single-Walled Carbon NanoTube TFSI: bis-(TriFluoromethaneSulfonyl) Imide ToF-SIMS: Time-of-Flight Secondary Ion Mass Spectrometry UPS: Ultraviolet Photoemission Spectroscopy VB: Valence Band VBM: Valence Band Maximum 180 TCO: Transparent Conductive Oxide XPS: X-ray Photoemission Spectroscopy XRD: X-Ray Diffraction XRR: X-Ray Reflectrometry 181
1805.05437	2	1805	2018-06-13T09:43:04	Nanophotonic Pockels modulators on a silicon nitride platform	[ "physics.app-ph", "physics.optics" ]	Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O- and the C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses ($\alpha\approx 1$ dB/cm). A $V_\pi L\approx$ 3.2 Vcm is measured. Simulations indicate that values below 2 Vcm are achievable. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.	physics.app-ph	physics	Nanophotonic Pockels modulators on a silicon nitride platform Koen Alexander,1, 4, ∗ John P. George,1, 2, 4, ∗ Jochem Verbist,1, 3, 4 Kristiaan Neyts,2, 4 Bart Kuyken,1, 4 Dries Van Thourhout,1, 4, † and Jeroen Beeckman2, 4, ‡ 1Photonics Research Group, INTEC Department, Ghent University-imec, Ghent B-9000, Belgium 2Liquid Crystals and Photonics Group, ELIS Department, Ghent University, Ghent B-9000, Belgium 3IDLab, INTEC Department, Ghent University-imec, Ghent B-9000, Belgium 4Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Ghent B-9000, Belgium (Dated: June 14, 2018) Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated pho- tonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on fer- roelectric lead zirconate titanate (PZT) films on SiN, in both the O- and the C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propaga- tion losses (α ≈ 1 dB/cm). A VπL ≈ 3.2 Vcm is measured. Simulations indicate that values below 2 Vcm are achievable. This approach offers a much-anticipated route towards high-performance phase modulators on SiN. The exponential increase in data traffic requires high capacity optical links. A fast, compact, energy efficient, broadband optical modulator is a vital part of such a sys- tem. Modulators integrated with silicon (Si) or silicon nitride (SiN) platforms are especially promising, as they leverage CMOS fabrication techniques. This enables high yield, low-cost and scalable photonics, and a route to- wards co-integration with electronics [1]. SiN-based inte- grated platforms offer some added advantages compared to silicon-on-insulator (SOI), such as a broader trans- parency range [2], a lower propagation loss [3, 4], signif- icantly lower nonlinear losses [2, 5], and a much smaller thermo-optic coefficient [2]. Therefore, phase modulators on SiN in particular would open new doors in other fields as well, such as nonlinear and quantum optics [5–7], mi- crowave photonics [8], optical phased arrays for LIDAR or free-space communication [9], and more. State-of-the-art silicon modulators rely on phase mod- ulation through free carrier plasma dispersion in p-n [10], p-i-n [11] and MOS [12] junctions. Despite being rela- tively fast and efficient, these devices suffer from spuri- ous amplitude modulation and high insertion losses. Al- ternative approaches are based on heterogeneous integra- tion with materials such as III-V semiconductors [13, 14], graphene [15, 16], electro-optic organic layers [17], germa- nium [18] or epitaxial BaTiO3 (BTO) [19–21]. Most of these solutions are not viable using SiN. Due to its insulating nature, plasma dispersion effects and many approaches based on co-integration with III-V semicon- ductors, graphene, and organics, which rely on the con- ductivity of doped silicon waveguides, cannot be used. The inherent nature of deposited SiN further excludes solutions using epitaxial integration. Finally, SiN is cen- trosymmetric, hampering Pockels-based modulation in the waveguide core itself, in contrast to aluminum ni- tride [22], or lithium niobate [23]. Nonetheless, modu- lators on SiN exist. Using double-layer graphene, Phare et al. achieved high speed electro-absorption modula- tion [24] and using piezoelectric PZT thin films, phase modulators based on stress-optic effects [25] and geomet- ric deformation [26] have been demonstrated, albeit with sub-MHz electrical bandwidth. In this work, we use a novel approach for co-integration of thin-film PZT on SiN [27]. An intermediate low-loss lanthanide-based layer is used as a seed for the PZT de- position, as opposed to the highly absorbing Pt-based seed layers used conventionally [25, 26], enabling direct deposition of the layer on top of SiN waveguides. We demonstrate the first efficient high speed phase modulators on a SiN platform, with bias-free operation, modulation bandwidths exceeding 33 GHz in both the O- and C-band, and data rates up to 40 Gbps. We mea- sure propagation losses down to 1 dB/cm and half-wave voltage-length products VπL down to 3.2 Vcm for the PZT-on-SiN waveguides. Moreover, based on simulations we argue that the VπL can be considerably reduced by optimizing the waveguide cross-section, without signifi- cantly increasing the propagation loss. Pure phase mod- ulation also enables complex encoding schemes (such as QPSK), which are not easily achievable with absorption modulation. These results not only strongly improve upon what is currently possible in SiN, they are also on par with the state-of-the-art modulators in silicon- on-insulator [28]. RESULTS Device design and fabrication ∗ These authors contributed equally to this work † [email protected] ‡ [email protected] The waveguides are patterned using 193 nm deep UV lithography in a 330 nm thick layer of LPCVD SiN on a 3.3 m thick buried oxide layer, in a CMOS pi- 8 1 0 2 n u J 3 1 ] h p - p p a . s c i s y h p [ 2 v 7 3 4 5 0 . 5 0 8 1 : v i X r a 2 Figure 1: Design and static response of a C-band ring modulator. a, Top view of a PZT-on-SiN ring modulator. b, Cross-section of a PZT-covered SiN waveguide. c, Schematic of the PZT-covered SiN waveguide, the fundamental TE optical mode at is plotted in red. The quiver plot shows the applied electric field distribution between the electrodes. PZT thickness, waveguide width and gap between the electrodes are respectively 150 nm, 1200 nm and 4 m. d, Normalized transmission spectrum of a C-band ring modulator. e, Transmission spectra for different DC voltages. f, Resonance wavelength shift versus voltage applied across the PZT, including a linear fit. Mach-Zehnder), see Supplementary Information. Fig. 1c shows a schematic of the cross-section. An electric field is applied through in-plane electrodes, changing the re- fractive index in the PZT and hence the effective index of the waveguide mode. The PZT thin films exhibit a higher refractive index (n ≈ 2.3) than SiN (n ≈ 2), so a significant portion of the optical mode is confined in the PZT. A grating coupler is used for in- and outcoupling, into the fundamental quasi-TE optical mode. Figure 2: Poling stability of the electro-optic film. Tuning efficiency (C-band ring) as a function of time after poling. The axis on the right shows the estimated corresponding VπL. lot line. Subsequently, PECVD SiO2 (thickness ≈ 1 m) is deposited over the devices and planarized, ei- ther using a combination of dry and wet etching, or by chemical-mechanical polishing (CMP). The PZT films are deposited by chemical solution deposition (CSD), us- ing a lanthanide-based intermediate layer (see Methods and Ref. [27]). Finally, Ti/Au electrical contacts are patterned in the vicinity of the waveguides using pho- tolithography, thermal evaporation and lift-off. For the samples planarized through CMP, waveguide losses of around 1 dB/cm are measured (see Supplementary In- formation). Figs. 1a and 1b show the top view and waveguide cross-section of a C-band ring modulator, for images of the other fabricated modulators (O-band ring, C-band DC characterization and poling stability Fig. 1d shows the transmission spectrum of a C- band (1530 nm - 1565 nm) ring modulator. The ring has a loaded Q factor of 2230 and a free-spectral range ∆λFSR ≈ 1.7 nm. The ring radius, the length of the phase shifter L and the electrode spacing are respectively 100 m, 524 m and 4.4 m. The relatively low Q factor is caused by sub-optimal alignment of the electrodes. After deposition the PZT crystallites have one crystal plane parallel to the substrate, but no preferential orien- tation in the chip's plane. To obtain a significant electro- optic response for the quasi-TE optical mode, a poling step is performed by applying 60-80 V (≈ 150 kV/cm) for 1 hour at room temperature, followed by several hours of stabilization time. The transmission spectrum is measured for different DC-voltages applied across the PZT layer (Fig. 1e). The voltage-induced index change shifts the resonance. In Fig. 1f, the resonance wavelength shift is plotted PZTSiO2SiNAirTi/Au3 Figure 3: High-speed measurements. a, Sketch of the setup used for small signal measurements (solid path in the switches) and for the eye diagram measurements (dashed path). VNA: vector network analyzer, AWG: arbitrary waveform generator, OTF: optical tunable filter. b, Electro-optic small signal (S21 parameter) measurement of several modulators. c, Eye diagrams of a C-band ring modulator, measured with a non-return-to-zero scheme (29 − 1 pseudorandom binary sequence) and a peak-to-peak drive voltage of 4.2 V. as a function of voltage, the slope gives the tuning ef- ficiency ∆λ/∆V ≈ −13.4 pm/V. From this we esti- mate the half-wave voltage-length product to be VπL = LλFSR∆V /(2∆λ) ≈ 3.3 Vcm. Through simulation of the optical mode and DC electric field, the effective electro-optic coefficient reff of the PZT-layer is estimated to be 61 pm/V (see Methods), in good comparison with ellipsometry measurements on our thin films [27]. Mea- surements on other modulator structures yield consistent values for reff , the smallest VπL value (≈ 3.2 Vcm) was measured on an O-band ring (Supplementary Informa- tion). The PZT was poled prior to the measurements, after which no bias voltage was used. To demonstrate longer term stability of the poling, the DC tuning efficiency was periodically measured (sweeping the voltage over [-2,+2] V) on a C-band ring over a total time of almost three days. In Fig. 2, the resulting tuning efficiency ∆λ/∆V is plotted as a function of time, decaying towards a sta- ble value of about -13.5 pm/V over the course of several hours. The poling stabilized and there are no indications of decay over much longer periods of time, hence modu- lation is possible without a constant bias, as opposed to similar materials like BTO [19–21]. High-speed characterization For many applications, high-speed operation is essen- In Fig. 3a the setup used for high-speed charac- tial. terization is shown. On Fig. 3b, the S21 measurement for different modulators is plotted. The measured 3 dB bandwidths of both rings are around 33 GHz, the Mach- Zehnder has a bandwidth of 27 GHz. The bandwidths are not limited by the intrinsic material response of PZT, but by device design and/or characterization equipment. We furthermore demonstrate that our platform can be used for high-speed data transmission. In Fig. 3c, eye diagrams are plotted for different bitrates, a non-return- to-zero (NRZ) binary sequence (4.2 V peak-to-peak) is used. The eye remains open up until about 40 Gbps, limited by the arbitrary waveform generator (AWG) (25 GHz bandwidth), rather than by the modulator itself. At 10 Gbps, an extinction ratio of 3.1 dB is measured (see Supplementary Information). Device optimization The presented devices were not fully optimized in terms of electro-optic modulation parameters. Primar- ily the PZT thickness could be increased. Sub-optimal thicknesses were used to reduce bend losses and coupling losses into PZT covered waveguide sections. These lim- 4 Figure 4: Numerical optimization of a PZT-on-SiN phase modulator. Simulation of the waveguide loss α (a), the half-wave voltage-length product VπL (b) and their product VπLα (c) of a PZT-covered SiN waveguide modulator of the type shown in Fig. 1c, for a wavelength of 1550 nm. Waveguide height, width and intermediate layer thickness are respectively 300 nm, 1.2 m and 20 nm. The intrinsic waveguide loss (in the absence of electrodes) was taken to be 1 dB/cm, the effective electro-optic Pockels coefficient 67 pm/V. The circles show the approximate parameters used in this work, the diamonds show the optimal point with respect to VπLα. itations can be alleviated by device design. In Fig. 4, simulation results of the most important figures of merit are plotted as function of the PZT layer thickness, and the electrode spacing. Waveguide height, width and the wavelength are respectively 300 nm, 1.2 m and 1550 nm. The waveguide propagation loss α (Fig. 4a) is calculated as the sum of a contribution caused by the electrodes, and a constant intrinsic propagation loss of 1 dB/cm, a realistic value if the samples are planarized using CMP (see Supplementary Information). The half- wave voltage-length product VπL (see Methods) and the product VπLα are shown in Fig. 4b and 4c, respectively. VπL represents a trade-off between drive voltage and de- vice length, VπLα also takes into account loss, and is ar- guably more important for many applications [26]. The loss increases with decreasing electrode spacing, but also with increasing PZT thickness, since the mode expands laterally. Due to the increasing overlap between the op- tical mode and the PZT, VπL decreases with increasing thickness. VπL also increases with increasing electrode spacing. An optimization of the waveguide width is given in the Supplementary Information. From Fig. 4b it is clear that VπL can go well below 2 Vcm. The interplay between these different dependencies can be seen in the plot of VπLα (Fig. 4b), which shows an optimum with VπLα ≈ 2 VdB. DISCUSSION To conclude, we have demonstrated a novel plat- form for efficient, optically broadband, high-speed, nano- photonic electro-optic modulators. Using a relatively simple chemical solution deposition procedure we incor- porated a thin film of strongly electro-optic PZT onto a SiN-based photonic chip. We demonstrated stable poling of the electro-optic material, and efficient and high-speed modulation, in the absence of a bias voltage. O- and C- band operation was shown, however we expect the plat- form to be operational into the visible wavelength range (>450 nm) [2, 29, 30]. From simulations it is clear that the devices characterized in this paper do not yet repre- sent the limitations of the platform and VπLα ≈ 2 VdB is achievable. Moreover, our approach is unique in its versatility, as the PZT film can be deposited on any suf- ficiently flat surface, enabling the incorporation of the electro-optic films onto other guided-wave platforms. METHODS PZT deposition and patterning. The details of the lanthanide-assisted deposition pro- cedure have been published elsewhere [27], a short sum- mary is given here. Intermediate seed layers based on lanthanides are deposited prior to the PZT deposition. The intermediate layer acts as a barrier layer to prevent the inter-diffusion of elements and as a seed layer provid- ing the lattice match to grow highly oriented thin films. A critical thickness of the intermediate layer needs to be maintained (> 5 nm) to avoid diffusion and secondary phase formations. However, on samples with consider- able surface topology, thicker intermediate layers are nec- essary to provide good step coverage and to avoid any is- sues associated with the conformity in spin-coating. On our samples planarized through etching, step heights be- tween oxide and SiN waveguides varied. We typically used an intermediate layer of thickness ≈ 24 nm to avoid issues. Both the intermediate layer and the PZT thin films are deposited by repeating the spin-coating and an- nealing procedure, which allows easy control of the film thickness. The PZT layer is deposited and annealed at 620 ◦C for 15 min in tube furnace under an oxygen ambi- ent. This Chemical Solution Deposition (CSD) method, a4681002003004001.011.011.011.041.041.041.21.21.71.71.7333555101020204080Electrodegap(μm)PZTthickness(nm)α(dBcm−1)b46810020030040011.21.21.51.52222.42.42.433444669Electrodegap(m)PZTthickness(nm)VπL(Vcm)c4681002003004002.42.42.42.433333555558812122.12.12.12.12020303022508Electrodegap(μm)PZTthickness(nm)VπLα(VdB)also called sol-gel, provides a cheap and flexible alter- native to achieve high quality stoichiometric PZT thin films regardless the substrate material. A reactive ion etching (RIE) procedure based on SF6 chemistry is used to pattern the PZT layer. The PZT film was removed selectively over the grating couplers used for the optical measurements. High-speed measurements. The small-signal response measurements were per- formed using an Agilent PNA-X N5247A network an- alyzer and a high-speed photodiode (Discovery Semi- conductors DSC10H Optical Receiver). For the eye diagram measurements, an arbitrary waveform genera- tor (Keysight AWG M8195A) and RF amplifier (SHF S807) are used to apply a pseudorandom non-return- to-zero (NRZ) binary sequence, the modulator output is measured with a Keysight 86100D oscilloscope with 50 GHz bandwidth and Discovery Semiconductors DSC- R409 PIN-TIA Optical Receiver. Calculation of the electro-optic parameters. Using COMSOL Multiphysics R(cid:13), several parameters can be calculated that strongly influence the performance of the modulators. To obtain efficient phase modulation, it is essential to maximize the overlap between the opti- cal mode and the RF electrical signal, quantified by the electro-optic overlap integral [31], Γ = g V 0cnPZT(cid:115)PZT Ee (cid:115) Re(Eop × Hop∗ xEop x 2dxdy ) · ezdxdy 5 , (1) where g is the spacing between the electrodes, V the applied voltage, 0 the vacuum permittivity, c the speed of light in vacuum and nPZT the refractive index of PZT. Ee x is the in-plane (x-)component of the RF electric field, and Eop represents the in-plane transversal component x of the optical field. When used as a phase shifter, an important figure of merit is the half-wave voltage-length product VπL. This product relates to the electro-optic coefficient reff of the PZT films and to Γ [31], VπL = λg n3 PZTΓreff , (2) where λ is the wavelength. Another important pa- rameter is the propagation loss of the optical mode, consisting of an intrinsic contribution (scattering, ma- terial loss in the PZT, intermediate layer, nitride and oxide) and a contribution caused by the vicinity of the electrical contacts. The former can be estimated based on cut-back measurements on unmetalized waveguides (see Supplementary Information), the latter can be numerically calculated. ACKNOWLEDGEMENTS The authors thank St´ephane Clemmen for his over- seeing role in the SiN chip fabrication and Philippe F. Smet for help with processing. K. A. is funded by FWO Flanders. [1] Sun, C. et al. Single-chip microprocessor that communi- cates directly using light. Nature 528, 534-538 (2015). [2] Rahim, A. et al. Expanding the silicon photonics portfo- lio with silicon nitride photonic integrated circuits. Jour- nal of Lightwave Technology 35, 639–649 (2017). [3] Levy, J. S. et al. 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The nominal thickness of the intermediate lanthanide layer (below the PZT) is 24 nm in all devices. The paper mainly highlights the results on C-band ring resonator modulators. However, more device types have been fabricated and characterized. Apart from the C-band rings, this section provides more details on O-band (1260 nm - 1360 nm) ring modulators and a C-band Mach-Zehnder type modulator. Fig. S1 gives an overview: Figs. S1a-c show respectively the top-view, cross section and a detailed cross section of the C-band device described in the paper, whereas Figs. S1d-f and S1g-i do the same for an O-band ring and a C-band Mach-Zehnder Interferometer (MZI). The O-band ring has a Q-factor of 1820 and a free-spectral range ∆λFSR of 3.27 nm. The ring radius is 40 m, with a phase shifter length L of 195 m. The MZI modulator electrodes have a length of 1 mm. Note the differences between the cross-sections of the devices, the waveguides in Figs. S1c and S1i were planarized trough back-etching of the top (≈ 1 m thick) oxide using a combination of reactive ion etching (RIE) and wet etching (HF), variations in top oxide thickness, etch rates and exact etch times can lead to relatively large steps (Fig. S1c). Moreover, the etch rates of the deposited oxide depend on the exact nitride structures underneath, even in the case of a seemingly planar surface (Fig. S1i), trenches of several tens of nanometers arise next to the waveguide (see inset in Fig. S1i). On Fig. S1d-f however, a device planarized using chemical mechanical polishing (CMP) is shown. A buffer layer of 50-100 nm of oxide is left on top of the nitride waveguide, so the obtained surface is much smoother. This leads to much smaller propagation losses (see section S2). Figs. S2a-c respectively show the transmission spectrum of the O-band ring (pictures in Figs. S1d-f), its transmis- sion spectrum for different DC-voltages, and the resonance shift as a function of voltage. The linear fit on Fig. S2c shows a resonance tuning efficiency of ∆λ/∆V ≈ −10 pm/V. From this value the half-wave voltage-length product 330 nm (SiN)125 nm (PZT)1 μm100 nm (PZT)100 μm40 μm400 μm4.4 μm5.0 μm5.56 μmabcdefghi350 nm (SiN)100 nm (SiOx)150 nm (PZT)300 nm (SiN)100 nm (PZT)800 nm 1600 nm 1 μm8 Figure S2: Static response of O-band ring and C-band Mach-Zehnder modulators. a, Normalized transmission spectrum of the O-band ring. b, Transmission spectra for different DC voltages. c, Resonance wavelength shift versus voltage, including a linear fit. d, Normalized transmission spectrum of the C-band MZI. e, Transmission spectra for different DC voltages. f, Optical phase shift as a function of voltage, including linear fit. can be estimated: VπL = LλFSR∆V /(2∆λ) ≈ 3.19 Vcm. Through simulation of the optical mode and DC electric field, the effective electro-optic coefficient reff of the PZT-layer around 1310 nm is estimated to be about 67 pm/V (see Methods). Figs. S2d-f show the transmission spectrum of the MZI modulator (pictures in Figs. S1g-i), the transmission spectrum for different voltages applied across the PZT and the electro-optic phase shift (with respect to 0 V) as a function of voltage. The voltage is applied to only one of the MZI arms. From this, we can estimate the Vπ (voltage needed to induce a π phase shift, or a shift of the sinusoidal transmission pattern over half a period) to be 47.6 V, corresponding to a VπL of 4.76 Vcm. This corresponds to an reff of the PZT-layer of about 70 pm/V. Variations in the measured VπL values are mainly due to variations in the waveguide cross-sections, electrode spacings and the used wavelengths (C-band versus O-band), see Eq. (2). Extracted electro-optic coefficients reff also vary somewhat, differences can in part be due to variations in film quality on different samples, but mainly stem from small uncertainties on the exact cross-section dimensions. S2. Waveguide loss measurements 9 In Fig. S3 the loss measurements on different types of waveguides are summarized. For the C-band measurements, chips were planarized using a combination of reactive ion etching (RIE) and wet hydrogen fluoride (HF) etching. Typically resulting in steps and trenches of several tens of nanometers in the vicinity of the waveguide (see section S1 and Fig. S1c, i). Figs. S3a-c summarize loss measurements on such waveguides, for a set of rib waveguide spirals (blue line on Fig. S3a and Fig. S3b) and a set of wire waveguide spirals (green line on Fig. S3a and Fig. S3c). The PZT-covered wire waveguides, resembling the ones used in the C-band modulators, have an estimated loss of 5 to 6 dB/cm. The rib waveguides were defined using a partial etch of 220 nm next to the waveguide core, the influence of this on the propagation loss is only expected to be minor, as is demonstrated by the measurements. Note that before PZT deposition, the waveguide loss can be as low as 0.5 dB/cm. For the O-band measurements, the planarization of the waveguides was done by chemical-mechanical polishing (CMP), resulting in a waveguide cross-section as shown in Fig. S1f, with a residual oxide layer of 50 to 100 nm on top of the waveguide (see section S1). Figs. S3d-e show the loss measurements of such waveguides for 3 test samples. The smoother surface for the PZT deposition can result in losses below 1 dB/cm. The simulated confinement factor in the PZT layer for the C- and O-band waveguides used in the loss measurements are respectively ≈ 0.23 (for both rib and wire waveguides) and ≈ 0.3. Figure S3: Loss measurements. a, Transmission versus waveguide length for a PZT-covered rib and wire waveguide, with cross-section similar to Fig. S1c (width = 1400 nm, wavelength = 1550 nm, PZT thickness ≈ 125 nm). b, c, Propagation loss of the respective rib and wire waveguides versus wavelength, before and after PZT deposition. The shaded area shows the standard deviation on the fitted slope. d, Transmission versus waveguide length for a PZT-covered waveguide, with cross-section similar to Fig. S1f (width = 800 nm, wavelength = 1310 nm, PZT thickness = 150 nm). Measured on 3 different samples. e, Propagation loss versus wavelength for these waveguide sets, including a sample with no PZT. S3. Extinction ratio measurement 10 The eye diagram shown in Fig. S4 was obtained using a DC-coupled Tectronix 80 C02-CR optical receiver with a sampling oscilloscope (Tektronix CSA 8000), applying a peak-to-peak voltage of 4.2 V at 10 Gbps (same as for Fig. 2c). Since the measured voltage scales with the total optical power, we can estimate the extinction ratio to be about 10 · log10(Pmax/Pmin) dB ≈ log10(23.8/11.6) dB = 3.12 dB. This corresponds well with a simple ball-park estimate based on the observed transmission spectrum and static DC-shift (Figs. 1d, e), since the extinction ratio in DC can · dλ dV · Vpp ≈ 60 dB/nm · 13.5 pm/V · 4.2 V = 3.4 dB, where T is the transmission be estimated as ∆T ≈ (cid:2) dT (cid:3) expressed in dB. dλ max Figure S4: Extinction ratio measurement. Eye diagram of a C-band ring modulator, measured with a 10Gbps non-return-to-zero scheme and a peak-to-peak voltage of 4.2 V (same as in Fig. 2c). Obtained using a DC-coupled optical receiver. S4. Device optimization - influence of the waveguide width In the simulations in Fig. 4, a sweep of the electrode spacing and PZT thickness was performed, since these can be easily tailored in post-processing. This was done for a fixed waveguide width of 1.2 m. The waveguide width can however also be designed, an optimization is given here. At each width, a sweep of VπLα as a function of PZT thickness and electrode gap of the kind described in the main text and shown in Fig. 4 was performed. Fig. S5a shows the optimal (smallest) value min(VπLα) and the VπL at that optimum. Fig. S5b shows the PZT thickness and electrode spacing of this optimum. The light blue area shows the waveguide width/PZT thickness combinations for which the waveguide only supports a single TE mode. In the main text, a width of 1.2 m was chosen in order to minimize min(VπLα) whilst still having single-mode behavior at the optimal point. 11 Figure S5: Numerical optimization of the a PZT-on-SiN modulator as a function of waveguide width. Optimization of the waveguide loss times the half-wave voltage-length product VπLα of a PZT-covered SiN waveguide modulator as a function of waveguide width. a, For each waveguide width VπLα is minimized as function of both electrode spacing and PZT thickness (blue line). The red line plots the calculated VπL at this optimum. b, Electrode spacing (blue) and PZT thickness (red) at the optimum. The light blue area shows the waveguide width/PZT thickness combinations for which the waveguide only supports a single TE mode. Wavelength, waveguide height and intermediate layer thickness are respectively 1550 nm, 300 nm and 20 nm. The intrinsic waveguide loss (in the absence of electrodes) was taken to be 1 dB/cm, the effective electro-optic coefficient 67 pm/V.
1908.10441	1	1908	2019-07-30T20:03:03	Modeling and FEM-based Simulations of Composite Membrane based Circular Capacitive Pressure Sensor	[ "physics.app-ph", "eess.SP" ]	In Micro-electro-mechanical Systems (MEMS) based pressure sensors and acoustic devices, deflection of a membrane is utilized for pressure or sound measurements. Due to advantages of capacitive pressure sensor over piezoresistive pressure sensors (low power consumption, less sensitive to temperature drift, higher dynamic range, high sensitivity), capacitive pressure sensors are the 2nd largest useable MEMS-based sensor after piezoresistive pressure sensors. We present a normal capacitive pressure sensor, for continuous sensing of normal and abnormal Intraocular Pressure (IOP). The composite membrane of the sensor is made of three materials, i.e., Si, SiO2 and Si3N4. The membrane deflection, capacitance variation, mechanical sensitivity, capacitive sensitivity and non-linearity are discussed in this work. Mathematical modeling is performed for analytical simulation, which is also compared with Finite Element Method (FEM) simulations. MATLAB is used for analytical simulations and CoventorWare is used for FEM simulations. The variation in analytical result of deflection in membrane w.r.t. FEM result is about 7.19%, and for capacitance, the variation is about 2.7% at maximum pressure of 8 kPa. The non-linearity is about 4.2492% for the proposed sensor for fabrication using surface micro-machining process.	physics.app-ph	physics	Modeling and FEM-based Simulations of Composite Membrane based Circular Capacitive Pressure Sensor Rishabh Bhooshan Mishra, S Santosh Kumar, Ravindra Mukhiya Smart Sensor Area, CSIR-Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan, India -- 333031 [email protected] Abstract. In Micro-electro-mechanical Systems (MEMS) based pressure sen- sors and acoustic devices, deflection of a membrane is utilized for pressure or sound measurements. Due to advantages of capacitive pressure sensor over pie- zoresistive pressure sensors (low power consumption, less sensitive to tempera- ture drift, higher dynamic range, high sensitivity), capacitive pressure sensors are the 2nd largest useable MEMS-based sensor after piezoresistive pressure sensors. We present a normal capacitive pressure sensor, for continuous sensing of normal and abnormal Intraocular Pressure (IOP). The composite membrane of the sensor is made of three materials, i.e., Si, SiO2 and Si3N4. The membrane deflection, capacitance variation, mechanical sensitivity, capacitive sensitivity and non-linearity are discussed in this work. Mathematical modeling is per- formed for analytical simulation, which is also compared with Finite Element Method (FEM) simulations. MATLAB® is used for analytical simulations and CoventorWare® is used for FEM simulations. The variation in analytical result of deflection in membrane w.r.t. FEM result is about 7.19%, and for capacit- ance, the variation is about 2.7% at maximum pressure of 8 kPa. The non- linearity is about 4.2492% for the proposed sensor for fabrication using surface micro-machining process. Keywords: Circular composite membrane, capacitive pressure sensor, mathe- matical modeling, FEM simulations. 1 Introduction Micro-machined sensors are integrated with electrical interface to make elec- tromechanical systems. MEMS sensors are systems which interact with measurand (like displacement, acceleration, flow, pressure and temperature etc.) and then con- verts it to an electrical signal, which is used to analyze the measurand so that further controlling, minoring and/or alarming actions can take place. ICs are used to perform signal-conditioning so that obtained signal can be used for further decision mak- ing/transmission/communication [1]. The market of MEMS based devices is growing at a fast rate from several years. In sensors domain, MEMS based inertial sensors, pressure sensors and micro-actuators have large application not only for consumer electronics, defense systems and automobile application but also for bio-medical ap- 2 plication. In some biomedical applications, the devices can be implanted in living- being, and then bio-medical signal can be transmitted using wireless communication technology i.e. telemetry [2-4]. MEMS based pressure sensors have replaced conventionally available pressure mea- suring devices like bourdon tubes, bellows, diaphragms, capsules and various vacuum measuring devices (such as Pirani gauge, McLeod gauge etc.). In conventional pres- sure measuring devices, pressure causes mechanical movement that rotates the poin- ters/dial. However, MEMS devices directly convert input pressure into corresponding electrical signal. MEMS pressure sensors are fabricated on silicon wafers (SOI, double SOI or single crystal silicon wafers) using surface, bulk or a combination of these two micro-machining techniques. Utilizing the above-mentioned technologies, the diaphragms are released which acts as a sensing element [5]. Increase or fluctuation in IOP can be the cause of glaucoma. According to World Health Organization (WHO), glaucoma is one of the major cause of blindness. Glau- coma causes irreversible eye disease, which damages the optical nerves. The normal range of IOP is 1.6 kPa -- 2.8 kPa. Therefore, the accurate measurement in early stage can save the eye from permanent blindness [2-3]. The normal mode capacitive pressure sensors have a fixed plate and a movable (usually conductive) plate/membrane, which are separated by a medium, i.e., vacuum, air or dielectric materials. The capacitance variation can be obtained by following three techniques (usually first technique is utilized for designing MEMS capacitive pressure sensor):  Changing the separation gap between parallel plates.  Changing the overlapping area between parallel plates.  Movement changing in dielectric materials which is filled between plates. This paper presents mathematical/theoretical modeling and FEM simulation of com- posite membrane based normal mode capacitive pressure sensor for IOP measurement (0 -- 8 kPa). The obtained results are also compared with one of our previous works, in which the modeling and FEM simulation of normal mode capacitive pressure sen- sor is carried out for the same application. In that work, only the silicon material of Young modulus of elasticity 169 GPa and poisson ratio of 0.066 is used as diaphragm material. For different diaphragm thicknesses after optimization, comparison of theo- retical and simulation results is presented [3]. In this presented work, the composite membrane is made of silicon (with same material properties), silicon dioxide (Young's modulus of elasticity 70 GPa and poisson ratio 0.17) and silicon nitride (Young's modulus of elasticity 222 GPa and poisson ratio 0.27). 2 Mathematical Modeling of Sensor 2.1 Membrane deflection and Capacitance variation After application of pressure P on thin, clamped and flat circular diaphragm of ra- dius 𝑎, thickness 𝑡 which made of homogeneous, isotropic and elastic material with Young's modulus of rigidity E and Poisson ratio ѵ, the diaphragm deflection can be given by [3]: 3 w(r) = (cid:2900)(cid:2911)(cid:3120) (cid:2874)(cid:2872) (cid:2888) (cid:3428)1 − (cid:4672) (cid:2870) (cid:2928) (cid:2870) (cid:4673) (cid:2911) (cid:3432) Here, D (flexural rigidity) can be given by: D = (cid:2889)(cid:2930)(cid:3119) (cid:2869)(cid:2870)((cid:2869)(cid:2879)ѵ(cid:3118)) The base capacitance of sensor can be given by: 𝐶(cid:3029)(cid:3028)(cid:3046)(cid:3032) = (cid:3084)(cid:3002) (cid:3031) (1) (2) (3) Here, A, d and 𝜀 are overlapping area between plates, separation gap and permittiv- ity of medium, respectively. Y Clamped dr r X a dr 2𝜋𝑟 Fig. 1. Circular clamped diaphragm depicting an annulus is taken from composite membrane. To find the capacitance of parallel plate capacitor after pressure application, cut an annulus at radius r of width dr from deflected clamped circular diaphragm, as shown in Fig. 1. The capacitance due to this annulus (a small element) can be given by: 𝜕𝐶(cid:3031) = (cid:3084)((cid:2870)(cid:3095)(cid:3045) ) (cid:3031)(cid:2879)(cid:3050)((cid:3045)) (4) After performing the integration over whole area of sensor, the capacitance can be given by: (cid:3028) 𝐶(cid:3031) = ∫ (cid:2868) (cid:3031)(cid:2879) After solving the above equation [3]: (cid:3084)((cid:2870)(cid:3095)(cid:3045)(cid:3031)(cid:3045)) (cid:3148)(cid:3159)(cid:3120) (cid:3122)(cid:3120) (cid:3136) (cid:3428)(cid:2869)(cid:2879)(cid:4672) (cid:3176) (cid:3159) (cid:4673) (cid:3118) (cid:3118) (cid:3432) 𝐶(cid:3050) = 4𝜋𝜀(cid:3495) (cid:3005) (cid:3017)(cid:3031) ln (cid:4698)(cid:3028)(cid:3118)√(cid:3017)(cid:2878)(cid:2876)√(cid:3031)(cid:3005) (cid:3028)(cid:3118)√(cid:3017)(cid:2879)(cid:2876)√(cid:3031)(cid:3005) (cid:4698) (5) (6) 4 Silicon dioxide Silicon ℎ(cid:2870) h ℎ(cid:2871) Silicon Nitride ℎ(cid:2869) Fig. 2. Composite membrane made of three different materials. If the diaphragm material is made of three different materials silicon, silicon dio- xide and silicon nitride [Si3N4(E(cid:2869), ѵ(cid:2869), h(cid:2869))/SiO2( E(cid:2870), ѵ(cid:2870), h(cid:2870))/Si(E(cid:2871), ѵ(cid:2871), h(cid:2871))], as shown in Fig. 2, then flexural rigidity of composite membrane can be given by [5]: D(cid:2913) = (cid:2889)(cid:3117)(cid:3427)((cid:2918)(cid:2879)(cid:2915))(cid:3119)(cid:2879)((cid:2918)(cid:2879)(cid:2915)(cid:2879)(cid:2918)(cid:3117))(cid:3119)(cid:3431) (cid:2871)((cid:2869)(cid:2879)ѵ(cid:3117) (cid:3118)) + (cid:2889)(cid:3118)(cid:3427)((cid:2918)(cid:2879)(cid:2915)(cid:2879)(cid:2918)(cid:3117))(cid:3119)(cid:2879)((cid:2918)(cid:3119)(cid:2879)(cid:2915))(cid:3119)(cid:3431) (cid:2871)((cid:2869)(cid:2879)ѵ(cid:3118) (cid:3118)) + (cid:2889)(cid:3119)(cid:3427)((cid:2918)(cid:3119)(cid:2879)(cid:2915))(cid:3119)(cid:2878)(cid:2915)(cid:3119)(cid:3431) (cid:2871)((cid:2869)(cid:2879)ѵ(cid:3119) (cid:3118)) (7) here, e is the neutral plane (the plane within the composite plate/membrane which is not in tension, compression or stress when there is application of pressure on the plate/membrane), this can be given by [5]: (cid:3137)(cid:3117) (cid:3117)(cid:3127)ѵ(cid:3117) e = (cid:2918)(cid:3117)((cid:2918)(cid:3117)(cid:2878)(cid:2870)(cid:2918)(cid:3118)(cid:2878)(cid:2870)(cid:2918)(cid:3119))(cid:2878) (cid:2918)(cid:3118)((cid:2918)(cid:3118)(cid:2878)(cid:2870)(cid:2918)(cid:3119))(cid:2878) (cid:3137)(cid:3118) (cid:3117)(cid:3127)ѵ(cid:3119) (cid:3118) (cid:2918)(cid:3119) (8) (cid:3137)(cid:3118) (cid:3117)(cid:3127)ѵ(cid:3118) (cid:3137)(cid:3118) (cid:3117)(cid:3127)ѵ(cid:3118) (cid:2918)(cid:3118)(cid:2878) (cid:2870)(cid:4674) (cid:3137)(cid:3117) (cid:3117)(cid:3127)ѵ(cid:3117) (cid:2918)(cid:3117)(cid:2878) (cid:3137)(cid:3118) (cid:3117)(cid:3127)ѵ(cid:3119) (cid:2918)(cid:3119)(cid:4675) Then deflection in the composite membrane, of radius L and flexural rigidity and thickness can be given by: w(cid:2913)(cid:2925)(cid:2923)(cid:2926)(cid:2925)(cid:2929)(cid:2919)(cid:2930)(cid:2915)(r) = (cid:2900)(cid:2911)(cid:3120) (cid:2874)(cid:2872) (cid:2888)(cid:3278) (cid:2928) (cid:3428)1 − (cid:4672) (cid:4673) (cid:2911) (cid:2870) (cid:2870) (cid:3432) (9) The capacitance variation due to pressure application is obtained by modifying the Eq. (4) and can be given by: 𝐶(cid:2933)_(cid:2913)(cid:2925)(cid:2923)(cid:2926)(cid:2925)(cid:2929)(cid:2919)(cid:2930)(cid:2915) = 4𝜋𝜀(cid:3495) (cid:3005)(cid:3278) (cid:3017)(cid:3031) ln (cid:3628) (cid:3028)(cid:3118)√(cid:3017)(cid:2878)(cid:2876)(cid:3493)(cid:3031)(cid:3005)(cid:3278) (cid:3028)(cid:3118)√(cid:3017)(cid:2879)(cid:2876)(cid:3493)(cid:3031)(cid:3005)(cid:3278) (cid:3628) (10) 2.2 Sensitivity and Non-linearity The mechanical sensitivity is a useful parameter, if maximum membrane deflection varies in different designs. The mechanical sensitivity is slope of maximum deflection versus pressure range curve. The mechanical sensitivity of composite membrane can be given by [2-3]: S(cid:2923)(cid:2915)(cid:2913)(cid:2918),(cid:2913)(cid:2925)(cid:2923)(cid:2926)(cid:2925)(cid:2929)(cid:2919)(cid:2930)(cid:2915) = (cid:2911)(cid:3120) (cid:2874)(cid:2872) (cid:2888)(cid:3161) (11) The capacitive sensitivity of composite membrane based sensor is obtained by the ratio of change in capacitance and applied pressure range [2-4]: S(cid:2913)(cid:2911)(cid:2926),(cid:2913)(cid:2925)(cid:2923)(cid:2926)(cid:2925)(cid:2929)(cid:2919)(cid:2930)(cid:2915) = (cid:2887)(cid:3171)(cid:3159)(cid:3182)(cid:2879)(cid:2887)(cid:3171)(cid:3167)(cid:3172) (cid:2900)(cid:3171)(cid:3159)(cid:3182)(cid:2879)(cid:2900)(cid:3171)(cid:3167)(cid:3172) 5 (12) Mechanical and Capacitive sensitivity both are terms which define the performance and specifications of sensors. The non-linearity of the sensor, at particular point, can be defined by [6]: NL(cid:2919)(%) = (cid:2887)(cid:3162)_(cid:3161)(cid:3173)(cid:3171)(cid:3174)(cid:3173)(cid:3177)(cid:3167)(cid:3178)(cid:3163)(cid:2879)(cid:2887)(cid:3162)_(cid:3161)(cid:3173)(cid:3171)(cid:3174)(cid:3173)(cid:3177)(cid:3167)(cid:3178)(cid:3163)× (cid:2887)(cid:3162)_(cid:3161)(cid:3173)(cid:3171)(cid:3174)(cid:3173)(cid:3177)(cid:3167)(cid:3178)(cid:3163) (cid:3148)(cid:3167) (cid:3148)(cid:3171) × 100 (13) here, Pi is applied pressure at any point on the calibrated curve, Pm is maximum pressure,C(cid:2914)_(cid:2913)(cid:2925)(cid:2923)(cid:2926)(cid:2925)(cid:2929)(cid:2919)(cid:2930)(cid:2915)(Pi) is capacitance at particular point on calibrated curve and C(cid:2914)_(cid:2913)(cid:2925)(cid:2923)(cid:2926)(cid:2925)(cid:2929)(cid:2919)(cid:2930)(cid:2915)(Pm) is capacitance at maximum pressure. 3 Results and Discussion The sensor must have good sensitivity, minimum non-linearity, low power con- sumption, robustness and small size. Before fabrication of the pressure sensor several steps needs to be carried out like designing, mathematical formulation, verification of mathematical modeling, analytical simulations and comparison of analytical simula- tion with FEM simulation. According to the mathematical formulation and analytical simulation, the optimized design of sensor can be obtained. However, in modeling and analytical simulation, several assumptions need to be taken. Therefore, the FEM simulation is performed to analyze the behavior of the sensor in a practical situation. The optimization of device using fabrication runs is complex, costly, time taking and needs more effort. Hence, it is highly desirable to have accurate and precise design and modeling. Considering the practical scenario, in this work, we have modeled composite membrane and verified the modeling with FEM simulations. In a capacitive pressure sensor, base capacitance must be in pF range and change must be in fF range for the capacitance measurement to be performed, effectively and efficiently. Therefore, we should try to increase base capacitance and change in capa- citance by choosing appropriate and optimized design parameters for sensors. If over- lapping area is increased for a particular thickness of membrane then deflection of membrane increases, so that mechanical sensitivity as well as capacitive sensitivity increases. If thickness of membrane is increased by keeping over-lapping area be- tween plates constant/same then deflection in diaphragm decreases, so that both me- chanical and capacitive sensitivity decreases. 3.1 Analytical design for membrane deflection The comparison of diaphragm deflection in 6 μm thick silicon diaphragm and composite diaphragm of same thickness is performed. In all the designs, composite membranes have a thickness of 6 μm (t). Silicon thickness is kept 5.3 μm thick and thickness of SiO2 and Si3N4 are varied as shown in the Table 1. The deflection in vari- ous composite diaphragms and in Silicon diaphragm with same overall thickness is 6 shown in Fig 3. The radius of the diaphragm is 360 μm and applied pressure is 8 kPa. The flexural rigidity and maximum deflection in membrane of these four membranes are indicated in Table 1. Table 1. Flexural rigidity and maximum deflection for different models. Flexural Rigidity Maximum Deflection Model No. Composite Diaphragm Thick- nesses Specification (μm) 1. 2. 3. 4. t = 6 h(cid:2869) = 0.2, h(cid:2870) = 0.5, h(cid:2871) = 5.3 h(cid:2869) = 0.15, h(cid:2870) = 0.55, h(cid:2871) = 5.3 h(cid:2869) = 0.1, h(cid:2870) = 0.6, h(cid:2871) = 5.3 (Pa.cm3) 3.0553 2.7556 2.6948 2.6312 (μm) 0.68717 0.76192 0.77910 0.79793 0.2 0.0 t = 6 µm h1 = 0.2 µm, h2 = 0.5 µm, h3 = 5.3 µm h1 = 0.15 µm, h2 = 0.55 µm, h3 = 5.3 µm h1 = 0.1 µm, h2 = 0.6 µm, h3 = 5.3 µm ) m µ ( n o i t c e -0.2 -0.4 l f e D -0.6 -0.8 0 50 100 Radius = 354 m Applied Pressure = 8 kP 150 200 250 Radius (µm) 300 350 400 Fig. 3. Membrane deflection of different thicknesses. According to Table 1 and Fig. 3, if flexural rigidity of membrane is larger, de- flection is lesser; therefore, the mechanical sensitivity is less. Since the flexural rigidi- ty of Model No.4 is less and deflection is maximum, hence, Modal No.4 is chosen for FEM simulation. The radius is modified according to separation, so that sensor can be fabricated for IOP measurements using appropriate process flow. 3.2 FEM simulations and comparison with analytical results While performing FEM simulations using CoventorWare®, composite membranes are merged. Then membrane edges are clamped and bottom plate is fixed. The pres- sure is applied on the top of membrane. The 'Tetrahedron' meshing type of Parabolic element order is used to mesh the model of sensor with element size = 5. chanical analysis, i.e., for obtaining deflection in membrane. The MemMech module and 'Mechanical' type of physics is utilized for me- The FEM result of composite membrane deflection of thicknesses h(cid:2869) = 0.1 µm, h(cid:2870) = 0.6 µm, h(cid:2871) = 5.3 µm and radius 354 μm is shown in Fig. 4. 7 Composite Membrane (Top Plate) Bottom plate Fig. 4. FEM result of Deflection in Composite membrane based Circular shaped Capacitive Pressure Sensor at 8 kPa Pressure using CoventorWare®. The comparison of analytical and FEM results are close to each other which is shown in Fig. 5. The variation in analytical and FEM results for membrane deflection increases, as applied pressure increases. 0.8 Analytical Results FEM Results 0.6 ) Radius = 354 m m  ( n o i t c e l f e D 0.4 0.2 0.0 0 2 4 6 Pressure (kPa) 8 Fig. 5. Analytical and FEM results of maximum deflection w.r.t. pressure variation. The MemElectro module and 'Electrostatics' physics is utilized for obtaining base capacitance. The bottom plate is grounded and 1 volt voltage is applied on the top 8 conductor. To obtain the capacitance at a particular applied pressure, CoSolveEM module is utilized in which Surface_BCs and DC_ConductorBCs are used to define the boundary conditions. In CoSolveEM module, mechanical as well as electrical analysis can be performed at a time. The base capacitance of sensor according to analytical simulation is 1.1619 pF and 1.206062 pF according to FEM simulation. The analytical and FEM result of capaci- tance variation w.r.t. applied pressure for membrane with radius of 354 μm, is shown in Fig. 6. 1.30 Analytical Results FEM Results Radius = 354 m ) F p ( e c n a t i c a p a C 1.25 1.20 1.15 0 2 6 Pressure (kPa) 4 8 Fig. 6. Analytical and FEM results of Capacitance variation w.r.t. pressure variation. The mechanical sensitivity of sensor according to analytical and FEM simulation is 93.25625 nm/kPa and 86.999075 nm/kPa, respectively. The capacitive sensitivity according to analytical and FEM simulations is 14.2375 fF/kPa and 13.1535 fF/kPa, respectively. 4 Conclusion The deflection, capacitance variation and sensitivity (mechanical and capacitive both) of composite membrane based capacitive pressure sensor is discussed with ma- thematical modeling and simulations. The membrane of proposed design is made of three different materials namely Silicon, Silicon dioxide and Silicon Nitride with thicknesses of 5.3 μm, 0.6 μm and 0.1 μm, respectively. The deflection curve w.r.t. applied pressure is obtained linear which validates the Hook's Law. The analytical and FEM simulation result of capacitance variation w.r.t. applied pressure is also determined. The sensor has 4.2492% non-linearity. The variation in FEM results with analytical result in membrane deflation curve is due to Kirchhoff's assumptions which have been considered in mathematical modeling/formulation. In mathematical formu- lations and analytical simulations of base capacitance and capacitance variation, the 9 fringing field, parasitic effects plus dielectric constant of silicon oxide and silicon nitride (i.e. 3.9 and 8, respectively) are not considered which are leading to the varia- tion in analytical and FEM results of capacitance variation w.r.t. applied pressure. Acknowledgement The authors acknowledge the Director, CSIR-CEERI, Pilani, Rajasthan for his guidance and support. We are also thankful to valuable discussion with Dr. Ankush Jain (Scientist, Process Technologies Group) of CSIR-CEERI. References 1. Fischer, A. C., Forsberg, F., Lapisa, M., Bleiker, S. J., Stemme, G., Roxhed, N., Niklaus, F.: Integrating MEMS and ICs. Microsystem and Nanoengineering, Nature (2015). 2. Mishra, R. B., Kumar, S. S., Mukhiya R.: Design and Simulation of Capacitive Pressure Sensor for Blood Pressure Sensing Application, IC3E, Univ. of Allahabad, India (2018). 3. Mishra, R. B., Kumar, S. S., Mukhiya R.: Analytical Modelling and FEM Simulation of Capacitive Pressure Sensor for Intraocular Pressure Sensing. In: ICCRME, vol. 404, pp. 012026. IOP Conference Series: Material Science and Engineering, India (2018). doi:10.1088/1757-899X/404/1/012026 4. Mishra, R. B., Kumar, S. S.: Pre-stressed Diaphragm based Capacitive Pressure Sensor for Blood Pressure Sensing Application. IAC3T, Univ. of Allahabad, India (2018). 5. Nie, M., Bao, H. Q.: A theoretical model and analysis of composite membrane of a piezo- resistive pressure sensor. AIP Advances (2016). 6. Kumar, S. S., Pant, B. D.: Polysilicon thin film piezoresistive pressure microsensor: de- sign, fabrication and characterization. Microsystem Technologies. vol. 21, issue 9, pp. 1949-1958, Springer (2015). doi: 10.1007/s00542-014-2318-1
1801.01408	1	1801	2018-01-04T15:34:27	The surface-tension-driven Benard conventions and unique sub-grain cellular microstructures in 316L steel selective laser melting	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	The unique sub-grain patterns have been found in some particular alloys (316L, Al-Si, Co-Cr-Mo) selective laser melting (SLM), the submicron-scale cellular, elongated cellular or even band structures are always coexisting inside one single macro-solidified grain. Furthermore, the cellular structures are symmetrical with hexagonal, pentagonal and square cellular patterns where the cellular size is only around 1{\mu}m. Single-layer and bulk 316L SLM experiments are presented that reveals the forming mechanism of these sub-grain cellular microstructures. Complex cellular sub-micron patterns were formed by the local convection and B\'enard Instabilities in front of the solid/liquid (S/L) interface (so-called mushy zones) affected by intricate temperature and surface tension gradients. In other words, this nonlinear self-organization phenomenon (B\'enard Instability) occurring at the S/L interface is superimposed on the macro-grain solidification process to form the sub-grain patterns/structures and elemental microsegregations. This simple and unified explanation can be expanded to other eutectic alloys formed by SLM, like the Al-Si system.	physics.app-ph	physics	The surface-tension-driven Bénard conventions and unique sub-grain cellular microstructures in 316L steel selective laser melting Xin Zhoua,c,*, Yuan Zhongb, Zhijian Shena,b, Wei Liua a School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China b Department of Materials and Environmental Chemistry, Arrhenius Laboratory, Stockholm University, S-106 91, Stockholm, Sweden c Science and Technology on Plasma Dynamics Laboratory, 710038, Xi'an, China Corresponding authors: Xin Zhou, [email protected] Abstract The unique sub-grain patterns have been found in some particular alloys (316L, Al-Si, Co-Cr-Mo) selective laser melting (SLM), the submicron-scale cellular, elongated cellular or even band structures are always coexisting inside one single macro-solidified grain. Furthermore, the cellular structures are symmetrical with hexagonal, pentagonal and square cellular patterns where the cellular size is only around 1μm. Single-layer and bulk 316L SLM experiments are presented that reveals the forming mechanism of these sub-grain cellular microstructures. Complex cellular sub-micron patterns were formed by the local convection and Bénard Instabilities in front of the solid/liquid (S/L) interface (so-called mushy zones) affected by intricate temperature and surface tension gradients. In other words, this nonlinear self-organization phenomenon (Bénard Instability) occurring at the S/L interface is superimposed on the macro-grain solidification process to form the sub-grain patterns/structures and elemental microsegregations. This simple and unified explanation can be expanded to other eutectic alloys formed by SLM, like the Al-Si system. Key words: Selective laser melting; Thermocapillary convection; Bénard- Marangoni-instability; Sub-grain structures; 1. Introduction 1 / 32 Selective laser melting (SLM) is a member of the additive manufacturing family of technologies whereby a three-dimensional (3D) part is built layer by layer by laser scanning of a precursor powder bed [1-4]. The physical feature of SLM is very similar to the micro-beam laser welding; a high energy and fast scanning micro laser beam (~100 μm) induces small melt volumes or melt pools which then solidify rapidly. The non-equilibrium solidification and multiscale hierarchical SLM microstructures will respond differently than conventional processing technologies [5, 6]. Unique sub-grain cellular and/or band morphologies are observed as typical features achieved by SLM in a range of metals or alloys and this might provide new routes for tailoring metal properties and performances [2, 7, 8]. A sub-grain (0.5 μm) cellular structure found inside each individual large grain in 316L SLM where reported by Saeidi [9]. Molybdenum was found to be enriched at the sub-grain boundaries, see Fig. 1a. Similar austenitic cellular colonies with sub-micro scale primary cell spacing in 316L SLM was reported by Yadroitsev [10]. A Mo-rich area was found in the central region of the track, see Fig. 1b. The latter author also reported the formation of colonies of coherent cells in AISI 420 austenitic stainless steel by SLM, in Fig. 1c [11]. The microstructure of 1Cr18Ni9Ti steel by SLM was mainly composed of cellular dendrites and demonstrated that the dendrite spacing increased with increasing powder layer thickness by Ma [12], see Fig. 1d. The resulting cellular/dendritic morphologies in SLM of 18Ni300 maraging steel contains very fine solidification cellular grains, with intercellular spacing smaller than 1μm, as reported by Casalino [13]. Here the differences between larger solidified macro-grains and fine sub-grain cellular structures/patterns should be emphasized. Firstly, the sub-grain structures are found to be less or around 1μm while the coexisting macro-grains are around tenths of micrometers. Secondly, two adjacent macro-grains always have different crystallographic orientations or high-angle grain boundaries while the sub-grain structures (within one macro-grain) have the same orientations. Thirdly, and most important, the sub-grain structures in a single macro-grain could have variable patterns (cellular, elongated cellular and even bands/stripes), which indicate a unique forming 2 / 32 mechanism. Fig. 1. Fine sub-grain cellular structures are shown by SEM images of SLM steel; (a) 316L [9], (b) 316L [10], (c) AISI 420 [11], (d) 1Cr18Ni9Ti [12]. Only (c) is exposed at the as-melted surface, whereas other images are from mechanical polished and chemically etched surfaces. Besides austenitic stainless steel, Al-Si is another alloy system which can form the unique sub-grain cellular microstructures. Bartkowiak performed SLM on Al-Si, Al-Cu and Al-Zn powder systems [14]. Cellular structures within very fine Si precipitations were found in the Al-Si system, but in other systems (Al-Cu, Al-Zn) these were not found, see Al-Si in Fig.2a. Dinda also found equiaxed dendrites in an Al matrix with a network of Si particles and the dendrite arm spacing was 1.4~1.7 μm [15]. Kempen found very fine sub-grain microstructures and fine distributions of Si phase in AlSi10Mg SLM parts [16]. This contributed to a higher hardness and strengths of the alloy; the microstructure is seen in Fig.2b. Using the same alloy composition and SLM, a very fine cellular–dendritic solidification structure with a size smaller than 1μm was observed by Thijs [17]. The grey cellular features in the SEM images were primary Al metal with small, distributed fibrous Si particles (white), as seen in Fig. 2c. Other similar results of SLM of Al-Si alloys can be found in Refs. [18-21], which prove that fine supersaturated Al-rich cellular structures along with Si at the boundaries are very common, see Fig. 2d. 3 / 32 Fig. 2. SEM images of the SLM Al-Si alloy where the small cellular Al-matrix has very fine Si precipitations in (a) [14], (b) [16] and (c) [17]. SEM micrograph with an EDX composition map (enhancing Si) is seen in (d) [19]. Besides austenitic steel and the Al-Si system, the sub-grain cellular morphologies can also be found in some other alloys processed by SLM; they are characterized by FCC structures or eutectic structures. Thus, Carter reported fine cellular sub-grain structures in Ni625 (Ni-Cr21.5-Mo9-Nb3.6) by SLM [22]. Here large amounts of Nb and Mo concentrated at cellular boundaries. In addition, Hedberg and Qian reported the use of SLM for Co-Cr-Mo compositions that gave fine cellular and elongated cellular microstructural features with cell boundaries enriched in Mo (Co depleted) [23]. The same cellular structures were observed in a SLM Co-Cr-Mo sample, at the transverse cross section normal to the building direction, by Takaichi [24]. Song fabricated NiCr alloy parts by SLM and found unusual fine columnar microstructural architectures [25]. Similar results are also reported in a CoCrW alloy by Lu [26]. These sub-grain cellular patterns, that tend to appear in some eutectic and FCC alloys by SLM, were discussed by Song in [6]. Song concluded that molten pool boundaries with fine cellular dendritic structures had been observed in 316L, 304 and Ni625 alloys, but these typical microstructures were not present in Ti-6Al-4V (HCP), Fe (BCC) and ferrous alloy metal matrix composites. This statement was supported by Vrancken that reported a Ti-6Al- 4V(-ELI) SLM microstructure consisting of acicular martensitic α′ within prior columnar β grains (50-150 μm) changed solidification mechanism when mixed with 10 4 / 32 wt.% Mo powder [27]. The new metal-metal composite (Ti-6Al-4V+10Mo) changed from planar to cellular mode and the new cellular β grains (5-15 μm) were significant smaller than the earlier columnar grains. More important, within each β grain a cellular substructure with an intercellular spacing of less than 1μm was present and microsegregation of the elements Mo, Al and V took place. The forming mechanism of sub-grain cellular microstructural features in SLM (and other laser surface melting technologies) is still an open question, although some researchers have tried to explain it. The given explanations can be classified into three classes, where the first is involving compositional fluctuations and the constitutional supercooling theory. The ratio of temperature gradients and growth rates (G/R) decides the grain growth morphologies; heat accumulation may also provide the opportunity for a transition from columnar to equiaxed structure (CET) [9, 10, 13, 28- 36]. The second class of explanation is the interface stability theory; the formed microstructure is related to the changes in velocity of the solidification front, rapid acceleration, oscillatory morphological instability and nonequilibrium trapping of solute [37-43]. The third class of explanation is either about the surface tension driven convection or a diffusive transport of impurities or of one of the constituents of the material [44-46]. Qu systematically investigated the solid-liquid interfacial morphology evolutions of Al-1.5%Cu in rapid solidification [47]. Qu found that the dendrite tip shape was an important parameter affecting the dendrite to cell transition. The transition can be described by specific linked conditions of velocities, temperature gradients and alloy compositions. All these explanations seem logical, but none of them can be considered as a unified explanation for all observed cases. The SLM process itself raises some specific conditions; firstly, the size of a SLM melt pool is limited, width and depth are around 100~200 μm, and the process can be treated as a thin film flow in which the gravity effect can be ignored. Secondly, the melt pool has extreme temperature gradients (~10 000 K/mm); inevitable giving intense convection and turbulent heat- and mass- 5 / 32 transfers [48]. Based upon these realities, the focus of this study will be thermocapillary (Marangoni) or solutocapillary flow in the SLM melt pool. It is known to play an important role in hydrodynamics, heat/mass transfer and solidification microstructure formation in melt alloys systems [49]. In addition, the hexagonal cellular convective pattern (Bénard cell) caused by surface-tension-driven instability (Bénard-Marangoni- Instability, BMI) is also an important physical phenomenon, as shown in Fig. 3a [50, 51]. These cellular convections in a melt pool have very important impact on the crystal growth, because the growing (moving) crystal interface can react to flow oscillations and can incorporate them as solidification microstructures [36, 51-53]. Fig. 3. Hexagonal convection patterns of the Bénard-Marangoni-Instability (a) [51]; as-melted top surface morphologies of 316L steel by SLM (b), etched fine sub-grain cellular microstructures of 316L steel by SLM (c). Comparing the similar size of cellular microstructures in (b) and (c) On the basis of melt pool convection and Bénard-Marangoni-Instability theory, single- layer and bulk 316L by SLM experiments were conducted in this study to explain the mechanism of sub-grain cellular microstructures. The relations between surface- tension-driven Bénard conventions, SLM as-melted top surface morphologies and the fine sub-grain cellular microstructures are also considered as illustrated in Fig. 3a, 3b and 3c, respectively. There are reasons to believe that complex cellular sub-grain patterns are formed by the local convection and Bénard Instability in front of the solid/liquid (S/L) interface (so-called mushy zone) and these are affected by extreme and intricate temperature gradients. This scenario can also be considered as a nonlinear self-organization phenomenon, which is superimposed on macro-grain solidification to 6 / 32 form the sub-grain patterns and microsegregations. This explanation seems reasonable and is unifying as it can be expanded to other eutectic alloys prepared by SLM, e.g. the Al-Si systems. 2．Materials and methods 2.1 Material 316L stainless steel powder granules with an overall chemical composition of 17 wt.% Cr, 10.6 wt.% Ni, 2.3 wt.% Mo, 0.98 wt.% Mn, 0.4 wt.% Si, trace amounts of S, C, P, O, N and the balance being Fe is used as precursor, supplied by Sandvik Osprey Ltd., Neath, UK [9]. The powder granules are spherical with particle size of 22~53m determined by a laser diffraction analyzer (Mastersizer 2000, Malvern Instruments, Worcestershire, UK). Before the experiments, the powders granules are sieved (50m) under argon to reduce the agglomeration and to improve fluidity. 2.2 Experiment arrangement and procedures All SLM experiments were conducted on a Renishaw AM250 facility equipped with a SPI redPOWER 200W ytterbium fiber laser, operating at 1,071nm wave length and 75 μm beam diameter (Φ99%) (Renishaw AMPD, Stone, UK). The laser runs in modulated operation (pulsed with TTL trigger). Single-layer SLM tests were performed to study the as-melted top surface morphologies, where the substrate was a rolled 316L plate, size of 10cm×8cm×3cm, and polished with 1000# abrasive paper. The polished surface was then coated with a black paint layer to reduce the reflection of laser energy. The powder layer was deposited on the black painted surface with a thickness of 50 μm by using the wiper system on the SLM machine, Fig. 4a. The laser beam then scanned the single powder layer with power 190W, scan speed 700 mm/s, line spacing 0.05 mm, and "zigzag" scan strategy. Oxygen content in the chamber was set as 1000 ppm (recommended by 7 / 32 Renishaw). The single-layer powder appearance after an interrupted laser scan is shown in Fig. 4b. Fig. 4. An illustration of the single-layer powder SLM experiment (a). The top surface appearance after and before laser scanning is shown by a divided SEM image with left and right areas, respectively (b). The 316L SLM bulks were fabricated using the same laser parameters as in the single- layer SLM experiments, except line spacing was 0.125 mm. The scan strategy was "cross hatching" which had long bi-directional scanning vectors and performed 67◦ angle rotation of scanning direction between adjacent layers. 2.3 Microstructural characterization Samples were microscopically characterized using a TESCAN MIRA 3LMH scanning electron microscope (SEM) from TESCAN (Brno, Czech Republic). The SEM samples were ground using sand paper in a Buehler abrasive belt grinder and followed by polishing with a set of decreasing diamond size suspensions with a final 1μm size. Chemically etching occurred in an acidic water solution containing 2% HF - 8% HNO3 - deionized water for, 10 minutes at 25℃. Transmission electron microscope (TEM) tests were performed on a JEM-2100 (JEOL, Tokyo, Japan). The TEM samples were first ground down to 70 μm thickness and then twin-jet electropolished to electron transparency; electrolyte was 10% perchloric acid in methanol and the temperature was 8 / 32 maintained at -30℃. 3．Results 3.1 The top surface morphologies of single-layer laser melting Clear melt tracks and surface ripples can be observed at the single-layer laser melting surface, as seen in Fig. 5a. These features are induced by the melt pool dynamics/oscillations and are typical surface phenomena observed in both welding and SLM [54, 55]. Other solidification patterns can be found, as cell dendrites (elongated cells and strips) with different directions, but the main direction is always pointing to the melt pool center, see Fig. 5b. The solidification patterns in Fig. 5 c-d actually represent the melt flow direction during the laser melting process, from the laser melt pool edge to the center. Three particular patterns can be distinguished by SEM at 5000X magnification; the first mode shows the mixed stationary hexagonal, pentagonal and square cellular patterns where the cellular size is only around 1μm, see Fig. 6 a-b and Fig.7. The second mode displays a "drifting cell", which can be considered as an elongated hexagonal cell, see Fig. 6 c-d. Finally, the third mode shows the appearance of "long strips" that have a width of only 1 μm, but with a length over 50 μm, see Fig. 6 e-f. The forming mechanism of these three as-melted top surface patterns can be explained by the interaction between convection instabilities in front of the solidification front and solute transport behavior, which will be further discussed in Section 4 below. 9 / 32 Fig. 5. Top views of a single-layer powder surface after laser melting observed at SEM with 1000X (a, b) and 2000X (c, d) magnification. The red dashed lines demonstrate the laser melt pool boundaries; the red arrows demonstrate the complex melt flow directions. Fig. 6. Different solidification morphologies of the top surface of a single-layer powder after laser melting. Mixed hexagonal, pentagonal and square cellular patterns are shown in (a, b), 10 / 32 elongated drifting cellular patterns in (c, d) and strip flow patterns in (e, f). Fig. 7. SEM images showing the geometry patterns in detail, demonstrating the mixed hexagonal, pentagonal and square cellular pattern in the images (a) to (c), respectively. 3.2 The sub-grain cellular/bands microstructures The solidified macro-grain boundaries (classified by grain orientations) in SLM 316L stainless steel are shown in Fig. 8. The size distributions of these irregular macro-grains are not uniform; there are both some larger grains with size over 50 μm and some smaller grains, but the median macro-grain size according to the graphical analysis results is of the order 10 μm. Fig. 8. The high-angle grain boundaries were analyzed by EBSD and presented at lower 11 / 32 magnification. The macro-grains have very complex substructures and SEM images from polished and chemically etched surfaces are given as examples in Fig. 9. Distinct and complex fine band/cellular sub-grain microstructures are revealed. There exist cellular and elongated cellular sub-grain patterns illustrated in Fig. 9 a-c. These are analogous in sizes and shapes to the as-melted top surface hexagonal patterns shown in Fig. 6 and 7. At the same time, the band structures in Fig. 9 d-f are analogous to the as-melted top surface strip patterns shown in Fig. 6 e-f. Regular cellular and elongated cellular structures appear simultaneously, as highlighted in Fig. 9 b. This demonstrates that the transitions from regular cells to elongated cells are natural under some circumstances. Furthermore, transition from cellular to strip patterns can also be found in Fig. 9 e. The band structures are formed in the following sequence: regular cells → elongated cells → bands. These transitions are very confusing as they exist in one single macro-grain. Current theoretical explanations of constitutional supercooling, columnar to equiaxed transition (CET) and lateral instabilities beneficial to the growth of secondary arms are all not very convincing. Therefore we suggest that these observations are nonlinear self- organization phenomena under the strong marangoni convection in front of the S/L interface, as proved and discussed in detail below. Details of sub-grain cellular and band structures exposed by SEM upon the transverse cross section (normal to the building direction) are presented in Fig. 10. The two clusters of bands in Fig. 10a are not solely by an epitaxial growth mechanism. The sub- grain boundaries are obviously more resistant than the interior of sub-grains toward the etching acidic media. The EDS line scan analysis confirm micro-segregation and concentration of elements that are more corrosion resistant into the boundaries, see Fig. 10c. 12 / 32 Fig. 9. The SEM images of a variety of sub-grain microstructures; with mixed cellular and band morphologies (a-f). All the images were exposed upon a transverse cross-section normal to the building direction. Fig. 10. Fine band (a) and cellular (b) microstructures are seen with a size around 0.5~1μm. The EDS line scan analysis (c) shows element distribution along the line shown in (b). The variations of Fe, Cr, Ni contents are obvious between the boundary regions and the interior of the sub-grains, cf. text. 3.3 The TEM observation Sub-grain bands and cellular microstructures can be distinguished also by TEM images, as seen in Fig. 11. The black circular inclusion in Fig. 11a is an amorphous Cr-Si-O 13 / 32 particle which has been discussed in [9]. Clearly dislocation tangles and dislocation cell structures are found in the TEM images. Occurrence of dislocation structures are normally achieved for plastically deformed steels, but do happen in SLM samples. Another observation is that the dislocations are not homogeneously distributed in the material, as in some area the density is very high while in other areas it is absent. This may related to the asymmetry of temperature gradients, impurity segregations and possible solid-state phase change of ferrite to austenite during rapid cooling. Fig. 11. TEM images are shown from band (a, b) and cellular microstructures (c, d). The black circular inclusion in (a) is a Cr-Si-O particle. 4．Discussion 4.1 The complex thermocapillary and solutocapillary convections in the melt pool The SLM technique or micro beam laser welding comprises very complex physical processes. The liquid metal is affected by heat/solute transport and at the same time intense convective vortex movements driven by asymmetrical temperature gradients, surface tension gradients and laser recoil forces (keyhole). Results from finite element simulation of the SLM process used on 316L steel can be seen in Fig 12-14 [56]. A finger shaped melt pool forms at ultra-high heating/cooling rates when laser 14 / 32 irradiates the surface in a straight line. The node temperature increases rapidly to a maximum around 2400K in Fig. 12. After the laser moved away the node temperature drops rapidly and the cooling rate can be estimated to around 6×104 K/s (G·R, K/cm·cm/s), see Fig. 12b. The temperature gradients in different cross profiles are found in Fig. 13. The width of the elongated melt track is around 150 μm, but the length is near 1mm. A high temperature gradient exists at the melt track edge perpendicular to laser moving direction, in Fig. 13a. The value of Gx can be calculated as high as 1.3×104 K/cm, see Fig. 13b. A longitudinal-section view reveals that the melt has a maximum depth of 200 μm and a tail with gradual reduced depth, in Fig. 13c. The temperature gradient Gy along the tail (laser moving direction) is only 1.0×103 K/cm, see Fig. 13d. At a cross-section view, the temperature gradient Gz in the melt pool bottom (perpendicular to laser scan surface) is about 6.2×103 K/cm, in Fig.13 e-f. The mentioned non-uniform temperature gradients found in the melt pool can induce surface tension variations and generate thermocapillary flow [57]. The direction of a thermocapillary flow depends on the temperature coefficient of the surface tension, ∂σ/∂T. For a metallic melt having negative ∂σ/∂T; the higher surface tension of liquid metal near the edge (cooler) and the thermal-capillary force induced by the surface tension gradients pull the liquid metal away from the center. Therefore the melt will flow from the center to the edge (so-called Marangoni flow), as plotted in Fig. 14b. When the flow approaches the edge it sinks and reverses along the bottom to the center where it will rise to the surface again; a full circulation loop. A convective vortex movement is formed, as illustrated in Fig. 14. In addition, inhomogeneity of surface tensions may also result from temperature or concentration variations of other solutes altering the surface energies, e.g. dissolved surface-tension active components (S, O) and element enrichments of a multi-element alloy. Surface tension will be a function of temperature T and the contents of other elements [58]: (1) Where ∂σ/∂T is coefficient (temperature and surface-active elements) of surface tension; 15 / 32 0segisegisegiKa=Aln(1Ka)T1KassHRTR is the gas constant; Γs is the saturated surface excess; Kseq is the equilibrium absorption coefficient of surface-active elements; ai is the activity of surface-active elements (weight % ); and ΔH0 is the standard heat of adsorption. From Equ.1, all observed structural features can follow from changes of the local surface tension in front of the S/L interface and the thermocapillary flow mode. Two examples are the rejected elements of Si, Cr, Mo during austenitic solidification in 316L and the precipitation of Si phase in the Al-Si eutectic system, these elements can change the local surface tension gradients. In our experiments, although the SLM chamber environment is carefully controlled, it is still difficult remove all surface-active elements completely, e.g. oxygen. Some residual oxygen is present in the precursor powder and in the SLM machine chamber (＜1000 ppm). In the SLM process; the center of laser melt pool has the highest temperature and as ∂σ/∂T is a negative value the melt at the top surface flows outward (Equ.1). In the edge area, with significant lower temperature, the ∂σ/∂T changes to a positive value and the melt flow inverts inward from the edge to the center. The SEM images presented in Fig. 5 can be understood by this mechanism. Firstly, at the melt pool edge the largest temperature gradients exist with a dissolved surface-active element film, resulting in the described melt flow from edge to the center. Secondly, at an invariable cooling rate of 6×104 K/s (G·R) and the smallest temperature gradient being along the tail (1.0×103 K/cm), the growth rate R has a maximum value of 600 mm/s (laser speed 700 mm/s) from the tail to the center. Most important is that these ultra-high, nonlinear and asymmetrical temperature gradients can initiate intense melt jets and even turbulence instabilities, with surface flow rates higher than 1000 mm/s, which will then form complicated flow patterns and solidification microstructures [59]. 16 / 32 Fig. 12. FEM results of 316L by SLM; isometric view (a) and plot of node temperature vs. time relationship (b). The cooling rate (G·R, K/s) can be calculated. Fig. 13. FEM results of 316L by SLM. The melt pool by a top view (a), a longitudinal-section view (c) and a cross-section view (e), where a plot of node temperature vs. distance can be found in (b), (d) and (f), respectively. The involved nodes are also marked separately in (a), (c) and (e). Temperature gradients of the three different directions (Gx, Gy, Gz) can be calculated, where Gx represents the temperature gradient in the top surface melt pool edge, Gy represent the gradients in the melt pool tail and Gz represent the gradients in the melt pool bottom. 17 / 32 Fig. 14. Flow field computation results (with keyhole) of a melt pool formed by 316L by SLM; an isometric view (a), a top view (b), a cross-section view (c) and a longitudinal-section view (d). The corresponding temperature fields are also plotted. 4.2 Bénard instabilities and cellular microstructures in front of the S/L interface For small melt volumes, rapid heating/cooling rates and limited solute redistributions, the solidification by SLM can be considered as a process of "no solid diffusion and limited liquid diffusion" according to classical solidification theory. The solute rejected by the growing solid front forms a solute-rich boundary layer (mushy zone) ahead of the growing front. Convection induced mixing in the liquid has a very important effect on solute segregation and subsequently formed solid microstructures. The temperature gradients are asymmetrical and inclined to the free surface, see Fig. 13. Coexistences of both vertical and horizontal gradients can be considered [60]. The vertical Marangoni number and horizontal Marangoni number are defined: (2) 18 / 32 11MververaTdT (3) Where ΔTver is the vertical temperature gradient; gradxT is the horizontal temperature gradient; d is the layer thickness of the instability (1×10-6 m in vertical, 75×10-6 m in horizontal, as discussed below); η is the dynamic viscosity (6.44 mPa·s); χ is the thermal diffusivity (1.89·10-5 m2s-1); ∂σ/∂T= -0.39 mNm-1K-1. Thus, the vertical Marangoni number Maver (near the bottom and in front of a S/L interface) can be estimated roughly as 2000 and the horizontal Mahor (near the track edge) is roughly about 180. It is known that when a liquid layer has a vertical temperature gradient and the Maver becomes higher than the critical one (ΔT becomes higher than the critical ΔTc), the so- called Bénard-Marangoni-Instability occurs in the form of hexagonal cells driven by surface tension [51, 61-64]. The Maver and Mahor calculated above are remarkable large and an instability is inevitable. Flow pattern maps can be found in Fig. 15. When Maver is predominant and vertical melt flow has priority, the flow patterns have cellular structures (DC and SDC). When the Mahor is predominant and horizontal melt flow has the priority, the flow patterns have roll/strip structures (LR and SLR). The vertical cells (vertical instability) can be generated in a very thin layer (1×10-6 m) but the horizontal rolls (horizontal instability) need a longer surface convective region. As illustrated earlier the cell spacing was around 1μm, but the strips has a length over 50 μm, see the Figs. 6 and 7. Transitions between different convective patterns occurring by changing the governing parameter Ma have been proved [63]. Another similar case is the electron beam melting of high melting point metals; the beam heats the free surface of the melt and simultaneous radiative cooling is very significant, resulting in drifting cellular structures on the melt surface [60, 65]. 19 / 32 211MhorxagradTdT Fig. 15. Stability limits of thermocapillary flow and flow pattern transitions, as expressed by the relation between the vertical Marangoni number and horizontal Marangoni number [51, 60]. In the figure denotations are DC: Bénard-Marangoni drifting cells; SDC: surface drifting cells; LR: longitudinal roll; SLR: surface longitudinal roll; and SF: steady flow. The Ma of our experiments lies in the drawn red rectangle area, so all three patterns (SLR, DC, SDC) can be expected. Based on the stability limits analysis and flow pattern transitions, the cellular sub-grain microstructure shown in Fig. 9c can be attributed to the Bénard-Marangoni-Instability. In a very thin layer (1×10-6m) in front of the S/L interface and at the melt pool bottom, there exists a very strong temperature gradient shown in Fig. 16a [66]. Thereby Marangoni-Bénard convection with hexagonal structures can be generated in this thin layer and at the same time be superimposed on grain solidification, see Fig. 16b. In conclusion, the solidification mode and morphologies of macro-grains are controlled by G and R and the sub-grain patterns are controlled by flow instabilities and Ma; these 20 / 32 two mechanisms are combined. Moreover, by the variations of fluid flow condition and the weld pool oscillation, the ideal hexagonal structures lose its stability to other geometries. Individual hexagons undergo local changes in topology and transform first into pentagons and then into squares; so the patterns within the macro-grain can be a mixture of hexagons, pentagons and squares, see Fig. 16c [67]. In addition, this Marangoni-Bénard instability can always be generated in front of the S/L interface, and advances accompany with the S/L interface movements until the sub-grain patterns are created in each of the macro-grains in the bulk. In another situation, where a strong horizontal temperature gradient and horizontal fluid flow exists in the melt edge area, streak structures can be generated from melt pool edge to the center, as in Fig. 17a. These streak structures can also be superimposed on macro- grain solidification and the intragranular band patterns are generated, see Fig. 9f. Ideal conditions exist for structures seen in Fig.16 and Fig. 17a, but the actual temperature gradients in SLM pools are asymmetrical and complicated. These interactions can generate more complex sub-grain patterns, see Fig.17b. The cellular, elongated cellular and bands appear simultaneously and transitionally (Fig. 9). The as-melted top surface morphologies can also be explained by similar mechanisms and these morphologies are generated in the last stage of solidification, reflecting the complex surface Marangoni flows as plotted in Fig.18. Fig. 16. Illustrations are given of the forming mechanism of cellular convective structures in 21 / 32 front of a solid/liquid interface. (a) Flow structure of 2D steady thermocapillary flow, where all streamlines pass through a comparatively thin boundary layer [66]. (b) Marangoni-Bénard convection with honeycomb structures superimposed upon macro solidification. (c) With different Ma the transition from pure hexagonal pattern through the mixture of hexagons, pentagons to squares are also presented [67]. Fig. 17. The forming mechanism of the bands in (a) and mixed patterns with cellular, elongated cellular or band structures in (b). 22 / 32 Fig. 18. The forming mechanism of as-melted top surface morphologies; (a) mixture of cellular and elongated cellular, (b) elongated cellular, (c) strips and (d) cellular structures. 4.3 The micro-segregations of sub-grain cellular structures The thermocapillary flow and Bénard-Marangoni-Instabilities in front of the S/L interface can also be proved by the inclusions and micro-segregations in SLM sub-grain patterns of 316L and of a Al-Si alloy. The equivalents of Cr (Creq) and Ni (Nieq) of the precursor powders, of the SLM cellular microstructure and of the Cr-Si-O inclusions are calculated according to Schaeffler predictive phase diagram, in Fig. 19c. For the precursor powder; it achieves 19.9 for Creq and 15.89 for Nieq, with Creq= (Cr+Mo+1.5Si+0.5Nb) and Nieq= (Ni+30C+0.5Mn) [68]. For the SLM cellular microstructure; it attains 20.035 for Creq and 16.11 for Nieq. Finally, for Cr-Si-O inclusions it is 32.95 for Creq and is 15.84 for Nieq (referred in [9]). The elemental composition of SLM cellular substructure is similar to the precursor powders, Creq/Nieq is 1.25 for powders and 1.24 for SLM sub-grain cells, cf. Fig. 19b. Comparing the Cr- Si-O inclusions with the precursor powders, austenite promoting elements (Ni, Mo) are reduced but ferrite promoting elements (Si, Cr, Ti) are increased, Creq/Nieq is 2.08 for Cr-Si-O inclusions, Fig.19a. According to the Schaeffler diagram and the WRC-1992 23 / 32 diagram, a single phase austenite will be formed by lower Creq/Nieq (＜1.37) and "austenite + acicular ferrite" will be generated for higher Creq/Nieq (≈2) [68, 69]. That means 316L steel solidifies with a single phase austenitic microstructure, which consumes the austenite-promoting Ni, and rejects the ferrite-promoting elements Cr, Si and Mo in the solidification front; thus the ratio of Creq/Nieq is increased ahead the S/L interface. Another physical phenomenon named particle accumulation structures (PAS) will be introduced [66, 70-72]. PAS is the behavior of small particles of dilute concentration in a time-dependent (oscillatory) ring vortex thermocapillary flow. The evenly distributed particles will form clouds circulating in the vortex when affected by an oscillatory thermocapillary flow, see Fig.20a. Effect of PAS has an impact on the discussion of SLM, where the austenitic solidification of 316L steel will reject the ferrite-promoting elements Cr, Si and Mo. The two elements Cr and Mo increase the local surface tension (solutocapillary) and Si increases the melt liquidity. The enhanced capillary vortex will bring the rejected ferrite-promoting elements Cr, Si and Mo from the S/L interface to the instability layer. The elements Si and Cr have strong affinity to oxygen and will react with residual oxygen and form the mentioned Cr-Si-O inclusions. These will precipitate together with the Mo-enrichment at the cellular boundaries by Marangoni- Bénard convection and PAS mechanism. For the higher Creq/Nieq in the boundary, it changes the solidification mode from "full austenitic" to "austenite + acicular ferrite". The solid-state phase transformation from austenite to ferrite occurs during cooling and that is the main reason of high dislocation concentrations observed and it contribute to different resistances toward an acid etching agent at the sub-grain boundary. These explanations can also be used for structures found in an Al-Si eutectic formed by SLM. The microstructure is significantly different when compared with a casted Al-Si alloy. By casting a continuous eutectic structure of Al and Si is displayed along with dispersed primary α-Al, see Fig. 20b [19]. The Al-Si SLM microstructure consists of cellular morphologies and EDS analysis reveals that Si is preferentially located at the 24 / 32 cellular boundaries (thickness of about 200 nm) and consequently the cells of 500-1000 nm size is richer in Al, see in Fig. 20 c. Based on the Al-Si phase diagram, the solubility of Si in Al is 1.65 wt% at 850K but decreases to 0.06 wt% at 573K [18]. Thus, the solidifying front rejects Si ahead of the S/L interface. Under the mentioned Marangoni- Bénard convection and PAS mechanism, the rejected Si particles will be redistributed by the intense capillary flow. Similar patterns as seen for 316L SLM (cellular, elongated cellular, bands) are preferred and residual Si micro-segregations will be seen along such boundaries. This mechanism can also be tested by the results of different base plate heating's in Fig. 20 c-d [20]. The microstructures obtained with base plate heating and without base plate heating have some differences; the width of dendrites is increased and some laminar eutectic appear with base plate heating. That might be due to the reduced ΔT and driving force of convections giving a tendency to solidify more as an eutectic casting. Fig. 19. EDS elemental analysis were done on a SLM Cr-Si-O inclusion (a) and a sub-grain cellular microstructure (b), resulting in calculated equivalent amounts of Cr and Ni. The Schaeffler diagram is shown in (c). 25 / 32 Fig. 20. The particle accumulation structures (PAS) in the ring vortex of thermocapillary flows are seen in (a) [70-72]. The microstructure by SEM of a casted Al-12Si alloy is shown in (b) [19], the microstructure after SLM of an Al-12Si alloy without preheating (c) and with preheating (d) [20]. 5. Conclusions (1) Single-layer and bulk 316L SLM experiments were presented in this paper to reveal the forming mechanism of sub-grain cellular microstructures in SLM. The submicron- scale cellular, elongated cellular or even band structures are always coexisting inside one single macro-solidified grain. Furthermore, the cellular structures are symmetrical with hexagonal, pentagonal and square cellular patterns where the cellular size is only around 1μm. (2) The use of SLM creates ultra-high, nonlinear and asymmetrical temperature gradients and surface-tension gradients caused by non-uniform heating of free surface within the melt pool. Thermocapillary convection and intense convective vortex movements with high surface flow rates are all very important physical phenomena in SLM. These will form complicated flow patterns and influence the solidification microstructures observed. (3) The unique sub-grain patterns are created by the complex temperature and surface 26 / 32 tension gradients and by the local convection and Bénard Instabilities in front of the solid/liquid (S/L) interface (so-called mushy zones). This nonlinear self-organization phenomenon (Bénard Instability) is superimposed on the macro-grain solidification to form the sub-grain patterns and microsegregations. More specifically, the solidification mode and morphologies of macro-grains are controlled by G and R, but the sub-grains patterns are controlled by flow instabilities and Ma. These two mechanisms are interacting and instability can always be generated in front of the moving S/L interface during SLM. (4) The micro-segregations and distinct element distributions can be explained by the PAS mechanism; describing the behavior of small particles of a dilute concentration in a time-dependent (oscillatory) ring vortex thermocapillary flow. The austenitic solidification of 316L steel will reject the ferrite-promoting elements Cr, Si and Mo at the S/L interface and the enhanced capillary vortex will bring the rejected elements from to the instability layer. The two elements Si and Cr will react with residual oxygen and form the precipitated Cr-Si-O inclusions and the element Mo will enrich at the cellular boundaries by a Marangoni-Bénard convection and PAS mechanism. These explanations can also be used in Al-Si eutectic and CoCrMo prepared by SLM. Acknowledgement This work was supported by National Magnetic Confinement Fusion Science Program of China under Grant 2013GB109004 and 2014GB117000, and by National Natural Science Foundation of China under Grant 51361130032. The authors are grateful for the technical help and valuable discussions from Yuan Xue, Yi Zhai from Tsinghua University, and Dr. Thommy Ekström from Stockholm University. References: [1] D.D. Gu, W. Meiners, K. Wissenbach, R. Poprawe, Laser additive manufacturing of metallic components: materials, processes and mechanisms, INT MATER REV 57 (2012) 133-164. 27 / 32 [2] X. Zhou, K. Li, D. Zhang, X. Liu, J. Ma, W. Liu, Z. Shen, Textures formed in a CoCrMo alloy by selective laser melting, J ALLOY COMPD 631 (2015) 153-164. [3] J.P. Kruth, G. Levy, F. Klocke, T.H.C. Childs, Consolidation phenomena in laser and powder-bed based layered manufacturing, CIRP ANN-MANUF TECHN 56 (2007) 730-759. 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1910.12041	1	1910	2019-10-26T09:55:08	A Study of Electronic Transport Through a Nanoscale Air Film	[ "physics.app-ph" ]	This paper presents a simple model for predicting electrical conductivity of air with varying electrode separation and different moisture content present in air. Our system consists of a metallic thin film (Cu) coated sample and a needle tip in a box filled with air. A constant potential difference has been applied between the tip and the sample and electrical current is calculated for different air-gaps and for different humidity conditions using COMSOL Multiphysics software. The electric potential, electric field and current density in the region between the probe tip and sample have been presented. The numerical results showing the variation of terminal current as a function of gap separation and relative humidity are found to be analogous with theoretical prediction. This study will be useful for finding the optimal current in case of electric field induced scanning probe nanolithography techniques such as electrolithography.	physics.app-ph	physics	A study of electronic transport through a nanoscale air film Ramonika Sengupta Electrical Engineering Department Pandit Deendayal Petroleum University Gandhinagar 382421 INDIA [email protected] Anand Anil Department of Physics Santanu Talukder Electrical Engineering & Computer Indian Institute of Science Education Science Department and Research Bhopal 462066 INDIA [email protected] Indian Institute of Science Education and Research Bhopal 462066 INDIA [email protected] Abstract -- This paper presents a simple model for predicting electrical conductivity of air with varying electrode separation and different moisture content present in air. Our system consists of a metallic thin film (Cu) coated sample and a needle tip in a box filled with air. A constant potential difference has been applied between the tip and the sample and electrical current is calculated for different air-gaps and for different humidity conditions using COMSOL Multiphysics software. The electric potential, electric field and current density in the region between the probe tip and sample have been presented. The numerical results showing the variation of terminal current as a function of gap separation and relative humidity are found to be analogous with theoretical prediction. This study will be useful for finding the optimal current in case of electric field induced scanning probe nanolithography techniques such as electrolithography [1]. Keywords -- Scanning probe lithography, Electrolithography, conductivity of air, humidity, COMSOL, tunneling current. I. INTRODUCTION The past few decades have seen the electronic devices becoming smaller and smaller. Nanotechnology has played an important role in reduction of the size of semiconductor devices. Lithography [1-6] has been routinely used to produce nanopatterns on semiconductors to fabricate these devices. Scanning Probe Lithography (SPL) is one of the most popular techniques for nanopatterning. SPL uses a microscopic or nanoscopic scanning probe to physically or chemically modify the structures in immediate proximity of the probe. 'Electrolithography' (ELG) is a novel scanning probe based patterning technique, reported recently [1]. In case of ELG technique three dimensional structures are manufactured using a negatively biased probe that is mechanically moved over a surface to produce microscale or nanoscale patterns. The main advantage of this technique is high resolution (<10 nm) nanopatterning. Furthermore, unlike most of the other lithography techniques, ELG has low cost and ease of operation since it can be performed under atmospheric conditions. However, at present, it cannot be used for large scale patterning due to the production with low throughput. Therefore, it is mainly used for fabrication of nanostructures on individual samples. In case of ELG and many other electric field induced SPL techniques it is important to understand -- how the air film, present in between the tip and sample, behaves while applying an electric field. Furthermore, we need to understand the role of humidity or moisture content of air in deciding air film Corresponding author: Santanu Talukder , e-mail: [email protected] XXX-X-XXXX-XXXX-X/XX/$XX.00 ©20XX IEEE conductivity. This paper presents a simple 3D model consisting of a pin probe and a thin film sample enclosed in an air box to be used for various SPL techniques including ELG. Various SPL techniques use different kinds of probe and sample structure. For example, in case of ELG, a conductive tip is used for patterning and sample needs to be coated with a thin Cr film layer. However, in the context of this paper, for simplicity we have taken the tip to be metallic (Cu), and sample is a Si substrate coated with pure Cu film. This way we neglected any unwanted effect arising from electronic properties of the tip or sample material. In addition, we could also avoid the oxidation effect on the tip or the sample. The system has been modelled using COMSOL Multiphysics version 5.4. The terminal current of the probe, which is crucial for precise nanopatterning, has been estimated for various probe tip diameters and for different separation gap between the probe and the sample. Moreover as the atmospheric conditions play an important role in determining the magnitude of probe terminal current, the effect of humidity on the terminal current has been also investigated. II. PIN PROBE MODEL FOR SPL IN COMSOL Fig. 1 shows a 3D schematic diagram of the model used in COMSOL platform for simulating electrical conduction through air. The system consists of a conical probe and a thin film sample. Both the probe and sample are kept in an air filled box. The principles of electrostatic theory have been used for simulating the electrical conduction through the scanning probe model shown in Fig. 1. Under the AC/DC module of COMSOL software, different constants, variables and materials are defined for the model. Similar to ELG technique, a negative potential is applied to the conical probe and the sample plate is kept at ground potential. Both of the Fig 1: Schematic diagram of pin-probe and sample. conductors are enclosed within a hollow copper block to provide for the boundary conditions. To simulate atmospheric conditions the block enclosing the probe and plate is filled with air of specified conductivity. A. Geometry of pin probe model The model consists of a probe and a plate. The probe has a bottom radius of 0.01 mm, top radius of 0.5 mm and a height of 1 mm. The probe is given -- ve potential and is positioned in XY plane at z = 0.7 mm. The grounded plate, which serves as the sample for nanostructuring, is positioned in XY plane at z = 0 mm. The plate thickness has been taken as 0.2 mm. This entire set-up is enclosed inside a conductor box with dimensions of 10 mm x 10 mm x 10 mm to provide for the boundary conditions for the assembly. B. Materials used for set up The material used for the probe, plate and the block is copper. The block used is a hollow copper block, containing air. The electrodes are surrounded by air and the effect of humidity is included by varying the conductivity of the air as a function of relative humidity [9], which in turn is related to the permittivity. C. Physics used in model The electric current formulation of AC/DC module of COMSOL is used to estimate the potential distribution between two electrodes. The corresponding electric field in the gap is also determined. The electric current density is related to electric field through Ohm's law (i.e., J =  E), hence the current density distribution is similar to the electric field distribution and is also determined by the software. Finally, the terminal current is obtained using the software by integrating the current density over the area. Extra fine Physics Controlled mesh was chosen for all the cases. Stationary and parametric analyses were performed. III. RESULTS AND DISCUSSION Fig. 2 shows the plot of potential distribution in the region around pin probe. The corresponding 3D plot for electric field showing the field lines is given in Fig 3. The potential drop is very sharp in the vicinity the probe tip, hence the electric field should be very high around the tip. We have also obtained the electric potential distribution and electric field with varying probe tip diameters. As we decrease the diameter of the probe tip, the electric field becomes stronger. The electric potential Fig. 3: Streamline plot showing electric field lines in the region around probe also differs for different atmospheric conditions in the vicinity of the pin probe. At atmospheric pressure it has much sharper drop near the pin probe than that under vacuum. Consequently the electric field is sharper near the pin probe surrounded with air than under vacuum. The variation of current density is similar to the variation of electric field. This is as expected since the conductivity of air has taken to be 10-9 S/m for these plots. the relationship 𝐽 = 𝜎𝐸 should hold. Here, Fig 4: Terminal current vs gap separation (0.1nm <z< 1mm) for probe tip diameter d = 20 m, the dots show COMSOL simulation and continuous line is empirical fit. The terminal current or total current passing between the pin probe and the grounded sample is then obtained by integrating the current density over the collection area. The gap of separation between the pin probe and the grounded plate was varied and the corresponding terminal current was obtained. Fig. 4 shows the terminal current as a function of gap separation z in the range of (0.1nm <z< 1mm) for probe diameter of d = 20 m. An empirical formula is obtained for the terminal current I(z) as a function of the gap separation z for probe diameter of d = 20 m and compared with the data Fig 2: Potential distribution (in V) in the region around the probe obtained from COMSOL to obtain the coefficients. Current should exponentially decay with increasing the gap. Because, in this nanoscale gap it follows tunnelling phenomenon. So, we can fit the result according to the equation 𝐼(𝑧) = 𝑎 𝑒𝑏𝑧 (1). Here, a and b are the constants having values 1.76×10-12 and -4.62 respectively and z is normalized by the mean. Both the COMSOL simulation and the empirical fit are shown in Fig. 4. As shown in Fig. 4, simulation results and theoretical prediction have very good match (Rsq =0.996) with each other. performed under atmospheric conditions, i.e., the temperature and humidity of the air between the electrodes may vary. Precise knowledge of the terminal current is required for nano- or micro-patterning under these varying ambient conditions. However, since the conductivity of air changes with the relative humidity [9], as a result, the terminal current also changes correspondingly. Hence we have estimated the variation of terminal current with conductivity which translate to the variation of terminal current with relative humidity of the air. Fig. 6 shows the behaviour of terminal current as a function of saturation ratio s which is the measure of relative humidity of air (i.e., s = %RH/100). The fitted empirical relation is also shown in the figure. The behaviour of the terminal current with saturation ratio s is given by the following empirical formula 𝐼(𝑠) = 𝑐 𝑠13 (2) where c is the constant empirically determined from the terminal current curve as 1.62x10-15. This simulation result also matches with the theoretical prediction made in Ref. [9]. Fig 5: Terminal current as a function gap separation with probe tip diameter of 10 nm, the dots show COMSOL simulation and continuous line is empirical fit. Fig. 5 shows the similar plot of terminal current as a function of gap separation for much smaller probe diameters i.e., d = 10 nm. The empirical fit to the data is also shown in the figure. Here the values of the constants a and b are 5.14×10-21 and -0.80 respectively. We have further studied the effect of atmospheric conditions on the terminal current. Electrolithography is Fig 7: Current Density as function of gap distance, along line joining grounded plate and probe tip for different values of saturation ratio s Fig. 7 shows the variation of current density with gap separation for various values of saturation ratio s. The current density increases at all values or gap separation with increasing humidity in air. IV. CONCLUSIONS AND SUMMARY The modelling of pin probe system for ELG technique has been performed in this work. The current flowing between the probe tip and the substrate is very crucial for precise nano- patterning on a substrate. We have estimated the terminal current for different probe tip diameters and with varying gap separations between the tip and sample. Current through the air film has been seen to decrease exponentially with increasing gap separation between the tip and the sample. Furthermore, since the ELG technique is done at atmospheric conditions, in determining the terminal current. Hence we have estimated the effect of relative humidity of air on the magnitude of current density. It has been seen that the current density, hence the terminal current increases with increasing relative humidity. This study will be helpful to optimize the current for different scanning probe based patterning techniques, which are performed in ambient conditions. the humidity plays an important role Fig. 6: Terminal current as a function of saturation ratio s ACKNOWLEDGMENT Authors wish to thank MHRD, Govt. of India for financial support, and Mr. Aryan Chaudhary and Mr. Anirban Sardar for fruitful discussions. REFERENCES [1] Santanu Talukder, and Rudra Pratap, "Electrolithography -- A New and Versatile Process for Nano Patterning," Scientific Reports, vol. 5, 17753, 2015, pp 1-11. Praveen Kumar [2] Yana Krisvoshapkina, Marcus Kaestner and Ivo W. Rangelow, "Tip- based nanolithography methods,"Frontiers of Nanoscience, vol. 11, 2016, pp. 497-542. [3] Marcus Kaestner, Yana Krisvoshapkina, Kaestner and Ivo W. Rangelow, "Next generation Lithography,"Frontiers of Nanoscience, vol. 11, 2016, pp. 479-495. [4] Philip C. Paul, "Thermal scanning probe Lithography," Frontiers of Nanoscience, vol. 11, 2016, pp. 543-561. [5] Sergio O. Martinez-Chapa, Arnoldo Salazar, Marc J. Madou, "Two- Photon Polymerization as a Compoent of Desktop Integrated Manufacturing Platforms,"in Three Dimensional Microfabrication using Two-photon Polymerization-A volume in Micro and Nano Technologies, Tommaso Baldacchini, Wilian Andrew Applied Scince Publishers, 2016, pp. 374-416. [6] Santanu Talukder, Bedanata Gogoi, Praveen Kumar, Rudra Pratap, Rivka Maoz and Jcob Sagiv, "Advanced Nanopatterning Using Scanning Probe Technology," Materials Today: Proceedings, vol. 18, 2019, pp. 740-743. [7] Anastasia Pavlova, "Preparation and studies of properties of nanostructured magnetic films for applications in magnetoacoustic and spintronic devices, " Ph.D Thesis, Ecole Centrale de Lille, 2016 [8] Jamie H. Warner, Franziska Schäffel, alicja Bachmatiuk, and Mark H. Rümmeli, "Characterization Techniques,"Graphene-Fundamentals and emergent applications, Elsevier, 2013, pp. 229-332. [9] Hugh R. Carlon, "Electrical Properties of Atmospheric Moist Air: A Systematic, Experimental Study, "CRDEC-TR-88059, , Chemical Research, Development & Engineering Center, U.S. Armament Munitions Chemical Comand, 1988, pp. 1-31.
1801.05638	1	1801	2018-01-17T12:31:06	Consideration on new functionality based on photo-excitation of magnetization in ultra-short time region	[ "physics.app-ph" ]	New functionalities on the basis of photo-induced, non-equilibrium magnetism are discussed in the context of optical integrated circuit. Importance of studies in weak excitation regime is stated, referring experimental results obtained by ultrafast spectroscopy using Co/Pd mutilayers.	physics.app-ph	physics	This manuscript was presented at Ultrafast Magnetism Conference on Oct. 22nd, 2015 at Nijmegen. The manuscript was not published due to the unpublished proceeding. Consideration on new functionality based on photo-excitation of magnetization in ultra-short time region H. Munekata Tokyo Institute of technology, 4259-J3-15 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan e-mail address: [email protected] Abstract New functionalities on the basis of photo-induced, non-equilibrium magnetism are discussed in the context of optical integrated circuit. Importance of studies in weak excitation regime is stated, referring experimental results obtained by ultrafast spectroscopy using Co/Pd mutilayers. Introduction Optical integrated circuit on a chip has become a matter of serious target in research and development. On the chip, dielectric waveguides bear optical interconnects among semiconductor-based active devices. The turn of magnetic materials will be in a waveguide-type optical isolator, which is natural and reasonable extension in view of achievement realized by bulk-type optical isolators. In this paper, I wish to discuss new functionalities that would appear when externally-controllable magnetism is added on the waveguides. New functionalities based on photo-excitation of magnetization Approach to this interesting thought is open at present. I wish to mention two efforts taking place in my laboratory: firstly, magneto-optical (MO) polarization modulation of light in a waveguide, and secondly, magneto-optical phase delay of light in a waveguide. The first subject of a magneto-optical modulator aims at multiplexed transmission of polarization modulation signals which transmit in a multi-mode waveguide. The most intriguing idea underlying this device is that local modulation of magnetic state can give rise to modulation of polarization of selected modes of light in a waveguide. See ref.1 which reported the demonstration of this idea using a magnet-fiber hybrid structure. The idea of the second work is based on a MO isolator utilizing Mach-Zehnder interferometer 2 (MZI) [2,3], in which the light coupled into an input port X is guided into two branches, undergoes MO phase delay ∆φ for the light in one branch, interferes at the yielding point of the two branch Y, and comes out from an output port Z, as shown schematically in Fig.1. The light energy at the port Z can be tuned between 0 (destructive interference, ∆φ = π) and 1 (constructive interference, ∆φ = 0) depending on the value of ∆φ; namely, the direction of a magnetization vector M of a magnetic layer M. The MZI-MO isolator relies on a large imbalance in light energy between the light propagating from X to Z and vice versa with a fixed M due to the non-reciprocity. Suppose now that M can be tuned externally. In such a case, intensity of light from X to Z can be modulated as a function M(t). This gives rise to various new functionalities, such as optical version of MRAM if one utilizes non-volatility of magnetization, and optical version of a transistor if one utilizes ultrafast non-equilibrium magnetic states caused by optical excitations. Let us suppose an intense a seed light pulse train R of pulse width and interval, respectively, Γ and 1/Ω, entering a port X, and a relatively weak signal-carrier pulse train S of the same Γ and 1/Ω (8 bit, 10011001) impinging a magnetic layer M. When M responds synchronously with S, the interference condition at Y is also modulated accordingly, thus yielding an intense, pulse train R* (10011001) from an outport Z. With this protocol, a sort of transistor function can be achieved. In general, the data transmission rate r can be enhanced significantly by reducing Γ within the context of the digital baseband transmission [4]. This notion addresses new, long-term challenges concerning developments of fs-lasers and highly sensitive detectors on a chip. There are a few requirements in view of properly and efficiently copying information carrier signals S on M. Firstly, initial response of magnetization should be fast enough, within the pulse width Γ; secondly, recovery of magnetization should be faster than the pulse interval 1/Ω; and thirdly, energy per pulse of S should be less than that of R. With those criteria in mind, photo-excited precession of magnetization (PEPM) in the regime of weak excitation (< 10 µJ/cm2/pulse ) has been studied using (Ga,Mn)As and ultrathin Co/Pd multilayers (MLs). In the next section, recent progress in the study on PEPM with Co/Pd MLs is reviewed, through which a mechanism that enhances efficiency of photo- excitation is concisely addressed. Fig. 1. A schematic illustration of an active three-terminal, magnet- waveguide hybrid structure based on MZI. 3 2. PEPM in Co/Pd MLs around 1 ps time region It was found that PEPM in Co/Pd MLs could be triggered by fs-laser pulses of the fluence as low as around 1 µJ/cm2 [5]. This fact implies that the mechanism other than ultrafast demagnetization may have significant influence on PEPM. Shown in Fig. 2 are temporal profiles of PEPM in the [Co(0.78 nm) / Pd(0.81 nm)]5 sample with various pump fluences F. Amplitude of oscillation increases throughout the entire time region with increasing F. Sharp spikes, being attributed to the ultrafast demagnetization, also develops at t < 10 ps for relatively high F. Profiles in the region t > 20 ps are well fitted with the LLG equation, through which we find a temporal profile of the effective field, H(t) = {1 + D exp(-t /τ )}⋅Hani − Hdem, where Hani and Hdem are perpendicular anisotropy field and demagnetization field, respectively, and D the magnitude of a sudden change upon pulsed excitation and τ its lifetime. D varies linearly with F, whereas τ is nearly constant τ ≈ 400 ps. Note that not only Hdem but also Hani is influenced simultaneously by the pulsed laser excitation. Furthermore, discrepancy between experiment and LLG at t < 20 ps indicates that the tip-off angle of a magnetization vector at the re- magnetized state (τ ∼ 5 ps) is larger than that expected by precession dynamics, suggesting that the energy supplied by the photonic excitation is consumed in part for varying the tip-off angle of magnetization even in the process of re-magnetization [6]. Fig. 2. Experimental PEPM data (solid lines) and calculated values (dots). Acknowledgments We acknowledge partial supports from Advanced Photon Science Alliance Project from MEXT and Grant-in- Aid for Scientific Research (No. 22226002) from JSPS. References [1] K. Nishibayashi, et al., Appl. Phys. Lett. 106, 151110 (2015). [2] M. Levy, IEEE J. Sel. Top. Quantum Electron. 8, 1300 (2002). [3] Y. Shoji and T. Mizumoto, Sci. Technol. Adv. Mater. 15, 014602 (2014). [4] General definition of direct digital data transmission as exemplified by optical pulse trains. [5] K. Yamamoto et al., IEEE Trans. Magn. 49, 3155 (2013). 4 [6] T. Matsuda, et al., presented at Jpn. Soc. Appl. Phys. Spring Meeting, March 11, 2015, 11p- D11-2.
1909.09869	1	1909	2019-09-21T18:47:39	Tailoring the optical and physical properties of La doped ZnO nanostructured thin films	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	The modification and tailoring the characteristics of nanostructured materials are of great interest due to controllable and unusual inherent properties in such materials. A simple spray pyrolysis technique is used to prepare pure and La-doped ZnO films. The influence of La concentration (0, 0.33, 0.45, 0.66, 0.92 and 1.04 at. %) on the structural, optical, and magnetic properties of ZnO was investigated. The exact nominal compositions of the prepared films were determined from the field emission scanning electron microscope occupied with EDX. X-ray diffraction confirmed that the samples possessed single-phase hexagonal wurtzite structure. The main crystal size was decreased from 315.50 {\AA} to 229.04 {\AA} depending on La dopant concentration. This decrease is due to the small ionic radius of Zn ions in compared to La ions. The band gap values were found to be depend strongly on La3+ ion content. Introducing La into ZnO induces a clear magnetic moment without any distortion in the geometrical symmetry, it also reveals the ferromagnetic coupling. The saturation magnetic moment of 1.04 at% La-doped ZnO shows the highest value of 0.014 emu, which is ~23 times higher than pure ZnO sample. The obtained results were discussed and compared with other literature data and showed an acceptable agreement.	physics.app-ph	physics	Tailoring the optical and physical properties of La doped ZnO nanostructured thin films Mai M. A. Ahmed1, Wael Z. Tawfik1,2,, M. A. K. Elfayoumi1, M. Abdel-Hafiez3,4,5 and S. I. El-Dek6, 1Department of Physics, Faculty of Science, Beni-Suef University, Beni-Suef, 62511, Egypt 2Department of Materials Science and Engineering, Chonnam National University, Gwangju 61186, Republic of Korea 3Lyman Laboratory of Physics, Harvard University, Cambridge, MA 02138, USA 4Physics Dept., Faculty of Science, Fayoum University, Fayoum, Egypt 5National University of Science and Technology "MISiS", Moscow 119049, Russia 6Materials Science and Nanotechnology Department, Faculty of Postgraduate Studies for Advanced Sciences (PSAS), Beni-Suef University, Beni-Suef, 62511, Egypt Abstract The modification and tailoring the characteristics of nanostructured materials are of great interest due to controllable and unusual inherent properties in such materials. A simple spray pyrolysis technique is used to prepare pure and La-doped ZnO films. The influence of La concentration (0, 0.33, 0.45, 0.66, 0.92 and 1.04 at. %) on the structural, optical, and magnetic properties of ZnO was investigated. The exact nominal compositions of the prepared films were determined from the field emission scanning electron microscope occupied with EDX. X-ray diffraction confirmed that the samples possessed single-phase hexagonal wurtzite structure. The main crystal size was decreased from 315.50 Å to 229.04 Å depending on La dopant concentration. This decrease is due to the small ionic radius of Zn ions in compared to La ions. The band gap values were found to be depend strongly on La3+ ion content. Introducing La into ZnO induces a clear magnetic moment without any distortion in the geometrical symmetry, it 1 also reveals the ferromagnetic coupling. The saturation magnetic moment of 1.04 at% La-doped ZnO shows the highest value of 0.014 emu, which is ~23 times higher than pure ZnO sample. The obtained results were discussed and compared with other literature data and showed an acceptable agreement. Keywords: La doped ZnO; Spray pyrolysis technique; Magnetic moment; Band gap; Roughness. * Corresponding authors E-mail addresses: [email protected] (Wael Z. Tawfik), [email protected] (S. I. El-Dek). 1. Introduction The relation between semiconductors and magnetism has led to the next generation of magnetic semiconductors, where it is not the electron charge but the electron spin that carries information [1]. These diluted magnetic semiconductors (DMSs) are formed by the partial replacement of cations in a non-magnetic semiconductor by magnetic transition metal ions [2-5]. They are of keen potentials for various applications such as spintronics, spin-valve transistors, spin light-emitting diodes, and logic devices [6-7]. DMSs obtain their magnetic properties as a result of intrinsic defects or adding external impurities within semiconductors by doping process [6-8]. One of the most challenges facing DMS materials to be viable for commercial application is to get Curie temperatures (Tc) above room temperature or what so called the room temperature ferromagnetism (RTFM). Thus, recent studies are interested in increasing Tc experimentally by controlling the different preparation conditions and through different doping mechanisms [8,9]. 2 The state-of-the-art semiconductor materials those recorded as DMS materials are II-VI compounds including CdTe, HgTe, CdS, CdO, ZnS, and ZnO [10-14]. This is due to their ability to achieve many desirable properties such as morphological, optical and electronic. Earth-abundant metal oxide semiconductors with a large energy band gap have shown more efficient for DMS applications as it is easy in fabrication, availability and diversity in optical, chemical, electrical, magnetic and other characteristics. Furthermore, capability to adjust their properties by appropriate doping has made them very promising materials in a wide range of applications. Among all those earth-abundant metal oxide semiconductors, zinc oxide (ZnO) proved itself as a remarkable DMS material. ZnO presents strong solubility towards transition metals ions (3d) and rare earth ions (4f) which provides the needed to magnetic properties. DMS based on transition metals and rare earth doped ZnO are being studied as these impurity ions introduce ferromagnetic properties (intrinsic spin) of uncoupled electrons coming from unfilled 3d and 4f orbitals to be combined with free charge carriers in the same material [15,16]. Moreover, a non-toxic and inexpensive ZnO with a stable wurtzite structure doesn't only has a high transparency in the visible light region but it has also a direct wide band gap of 3.37 eV at room temperature which makes it one of the most encouraging materials for potential applications in various fields such as optoelectronic devices, transparent electrodes of solar cells, liquid crystal displays, memristors and gas sensing [15-19]. ZnO has been fabricated in different shapes and by different techniques. It was succeeded to be fabricated as platelets, clusters consisting of nano-crystals, nano wires and thin films as well [20-25]. Thin films are more practical and economical for different applications. ZnO thin film gives good adhesion towards different types of substrates. Previous studies have recorded variety of chemical and physical techniques for ZnO thin film deposition including chemical 3 bath deposition, RF-sputtering, metal-organic chemical vapor deposition, molecular beam epitaxy, spray pyrolysis technique, filtered vacuum arc, and sol -- gel [26-33]. Compared to other deposition techniques, spray pyrolysis is considered as a one of the most remarkable and promising thin film deposition techniques as it is distinguished in its ability to coat large-scale areas, simple, non-vacuumed technique and inexpensive [34,35]. Rare earth elements are also under focus as dopants in ZnO-based DMS materials because of their optical, electrical and magnetic properties [36,37]. Lanthanum (La)-doped ZnO nanoparticles prepared by sol-gel have given a room temperature ferromagnetism [38]. Recently, many researches are still working on showing the reasons of such behaviour. Some of those researches have interpreted such behaviour to oxygen vacancies in La-doped ZnO lattice [38]. Whereas other groups have backed this behaviour to Zn vacancies [15]. In addition, few theoretical studies showed that La-doped ZnO is diamagnetic material and impossible to be ferromagnetic [39]. That conflict is common to be noticed between the theoretical and experimental studies. Thus, in this work a detailed study on the preparation of pure ZnO and La-doped ZnO films with different contents by simple spray pyrolysis technique is reported. It was found that the magnetic properties of ZnO film strongly depend on La content in ZnO matrix. By controlling the La content, different and controversial magnetic properties were reported along with structural, morphological and optical properties. 2. Materials and Methods Chemicals used for growth pure ZnO and La-doped ZnO films were of analytical grade and used 4 without any further purification. Zinc acetate dihydrate [Zn(CH3COO)2.2H2O, 99%], deionized water (DIW), methanol, dihydrate lanthanum acetate [La(CH3COO)3.2H2O,99%] and glass were used as the precursor, solution, dopant and substrate respectively. The former aqueous solution for ZnO was dissolving 0.5 M dihydrated zinc acetate in 50 ml of mixed solvent DIW to absolute methanol of ratio 1:1. The pure ZnO sample was labeled as ZO-0. To obtain La-doped ZnO films, dihydrated lanthanum acetate is added to the precursor solution at different concentrations of 0.33, 0.45, 0.66, 0.92, and 1.04 at.% for samples LZO-1, LZO-2, LZO-3, LZO-4, and LZO-5, respectively. All aqueous solutions were stirred for 1 hr at room temperature for homogeneity. Prior to the deposition process, the glass substrates were firstly cleaned through immersing in diluted HCl solution with DIW followed by washing in 1:1 DIW to ethanol in order to remove any surface oxides. After that, the glass substrates were carefully cleaned in ultrasonic cleaner then dried properly using compressed air and transferred to the substrate holder (or heater). Throughout deposition of all the films, process parameters such as substrate temperature (450o ± 5 °C), air pressure (0.5 bar), solution flow rate (5 ml/min), distance between spray nozzle tip to the glass substrate (30 cm) and final solution concentration (0.5 M) were kept constant. In the interim, the spraying of the fine droplets of the prepared solution starts up to the heated substrate using compressed air as a carrying gas. The chemicals in the solution are vaporized react on the substrate surface after reaching it leading to the formation of La-doped ZnO (LZO) films on the glass substrates. The expected chemical reaction that could occur on the surface of the hot substrate is given by: Zn(CH3COO)2. 2H2O 450°C ZnO Film + CO2 + CH3COH3 + H2O X-ray diffraction (XRD) pattern were recorded using x-ray diffractometer (PANalytical 5 Empyr-ean) equipped with graphite monochromatized CuKα radiation (λ=1.54056 A , 40 kV, 35 mA) in the 2θ range = 20 -- 70° to investigate the phase purity and structural parameters of the as-prepared films. JEOL-5410 field emission scanning electron microscopy (FE-SEM) attached with energy-dispersive X-ray (EDX) unit was employed to study the surface morphology and the elemental compositions of the as-prepared films. After photographing the films using FESEM, the micrographs were processed by Gwyddion 2.45 software without further calibrations [13]. After that, a 3D graph was initiated for each sample. The roughness parameters were calculated using the same software in nm. Optical transmittance spectra of all as-prepared films were measured in the wavelength range of 200 -- 900 nm with double beam Perkin-Elmer UV-vis spectrophotometer at room temperature and the optical bandgaps were estimated from linear extrapolation of Tauc plots, assuming direct allowed transition (n = 2). The thicknesses of all films were determined from Parava software by counting the interference fringes formed on the samples. The magnetic moment measurements were performed using a superconducting quantum interference device magnetometer (MPMS-XL5) from Quantum Design. 3. Results and Discussion Figure 1 represents structure examination using XRD for pure and La-doped ZnO films as collected at room temperature. It is clear that all films are formed in a polycrystalline structure coincided with hexagonal wurtzite phase. All patterns are matched well with ICDD card No. 01-075-1526 of space group P63mc no.186. Furthermore, there is no secondary phase referring to the complete solubility and homogeneity of La+3 ion into ZnO lattice up to till ratio of 1.04 at.%. In addition, the main appeared peaks correspond to the planes (002), (101) and (103). It is obvious that peak of (002) has the largest intensity with respect to the others. This indicates that 6 all films are preferred oriented along c-axis, which is perpendicular to substrate surface, and this behavior could be explained via Van der drift model [40]. It is also attributed to the nature of sp3 hybrid orbitals of ZnO, which results in Zn+2 and O-2 ions tetrahedral coordination thereby lowering the inversing symmetry. It was found from previous studies that the lowest densities of the surface free energy were found to be 9.9, 12.3 and 20.9 eV/nm2 that belongs to (002), (110) and (100), respectively [31]. Therefore, the film growth textured along (002) plane is mainly due to its lowest surface free energy [38]. These results agree well with that reported in references [27,31,33,38]. A significant plunged was observed in the main peak intensity (002) directly with rising La+3 contents. This briefly is an indicator of lowering crystallinity as well as the ionic ordering in such orientation with increasing La+3 on the expense of Zn+2 cations in equivalent lattice sites. Such behaviour may be a reflection of micro-strain arises due to the significant difference in ionic radii and in charge imbalance between Zn+2 and La+3 [27,33]. This micro-strain is more pronounced with further replacing Zn+2 by La+3 and in our case without altering the solubility of the latter into the hexagonal matrix of ZnO. It is noticed that the values of micro-strain, as calculated from (002) plane, achieved around 1.8 times of its value at La content of 1.04 at.% when compared to the un-doped parent ZnO. On the other hand, Y. Babacan et al. and Y. Bouznit et al. [19,31] recorded an increase of (002) peak intensity regarding to La content. Broadening and shift in the main peak intensity demonstrated successful incorporation of La+3 ions into ZnO crystal lattice. When La+3 ion occupy Zn+2 interstitials sites, which this causes lattice distortion and expansion because of its larger ionic radii of La+3 (1.032 Å) as compared to that of Zn+2 (0.734 Å). Crystallite size was calculated using Debye-Scherrer equation [27]: 7 (1) Where k= 0.9 represent shape factor, = 1.54056 Å the wavelength of CuKα incident beam, β= corrected line broadening at half maximum in radians and θ is Bragg angle. According to the calculated values reported in table (1), there is a reduction in the crystallite size against La+3. Depending on similar results reported by S. Anandan et al. [41] using co-precipitation method, I. Stambolova et al. [42] using spray pyrolysis technique and W. Lan et al. [27] using R.F magnetron sputtering encountered the similar behavior as well. This behavior was mainly attributed to La+3 incorporation within ZnO lattice sites may obstruct the grain growth and limit the grain boundary movement. Moreover, it may due to formation of Zn-La-O on doped thin film surface. This will lurk the grain growth and reduces the crystallite size. Another interpretation introduced by Eyup et al. [33] using sol-gel technique is that when large amount of La+3 content of ionic radius 1.032 Å replaces Zn+2 of ionic radius 0.734 Å inside ZnO lattice; a lattice distortion could be induced where crystal defects occurred. As a result, an impediment in the film growth could be formed, which could diminish the lattice size. This reduction in the grain size is a common behaviour in rare earth doped ZnO [36,37]. This could be attributed to the similarity in their ionic radius. The unit cell dimensions a and c along c-axis were estimated according to hexagonal wurtzite structure and listed in table (1) by using the equation [38]: where d is the inter planar distance (hkl) are the Miller indices for the main peaks. Zn‒O bond length of was also calculated using the following relation [43]: 8 where parameter u is represented by: where a and c are the lattice parameter calculated above. The volume of the unit cell was estimated by using equation [27]: As listed in table (1) there is a slight increase in lattice constant, bond length and lattice volume reflecting size difference between cations, this may agree with the fact that, there is significant difference between La+3 to Zn+2 radii. As La+3 substitutions into lattice occur, expansion was expected. Therefore, the Zn -- O bond length is increased when some La+3 ions reside in the unit cell at Zn+2 ion positions. The theoretical density was computed using [12]: where Z is the number of molecular per unit cell (Z=2), as depicted from the ICDD card, M is the molecular weight of the investigated samples, N is the known Avogadro's number and V is the unit cell volume. This likely seen that the density depends on both molecular weight and volume of unit cell. As the difference between atomic weights of La+3 (138.91 amu) and Zn+2 (65.37 amu) is almost the double, then it will compensate the slight increase in the unit cell volume. This in turns explained the observed enlargement of Dx values from 5.23 g/cm3 for pure ZnO to 5.54 g/cm3 for the La rich sample (1.04 at.%). 9 Figure 2 (a:f) displays FE-SEM micrographs of the as-prepared thin films of La:ZnO at different contents of La. It is obvious that the pure sample was formed as a cracked surface. However, with rising La ions into the films, grains tend to be more spherical. In addition, surface is distinguished with inter-granular porosity. The ratio of this porosity increases with La content growing. In addition, in the high contents' samples of La doping, the grains tend to be denser and compact, the micro cracks disappear and the grains look to be more observed and defects are more pronounced. These defects are generally due to the difference between the thermal expansion of both ZnO thin film (α = 7 × 10-6/°c) and soda lime glass (α = 9 × 10-6 /°c), besides the lattice mismatch between glass substrate and perfectly order hexagonal ZnO [31]. Roughness investigation of thin films is illustrated in Fig. 3. The scan area was taken to be 91×59 μm2, 3-dimensional image. The obtained values of root mean square (RMS) roughness are listed in table (1). It is observed that, RMS roughness tends to rise with La content increasing which may refer to the great influence of La ions into ZnO grains. It started with 27 nm for pure ZnO sample, then it grew steadily to achieve around 59.5 nm, and then it deteriorated suddenly to be 47.3 nm at the highest content of La. This trend of RMS could be explained by supposing that La ions have been trapped successfully into ZnO lattice, therefore the former work as a source of lattice defects [13]. Consequently, rising of La content leads to growing of surface roughness. This rough of surface may induce interactions with host materials which may promote this type of thin film for gas sensing applications [18]. The energy-dispersive X-ray (EDS) analysis spectrum of pure and 1.04 at.% La-doped ZnO are shown in Fig. 4 a and b. EDS analysis unambiguously confirms the presence of La in the ZnO deposited films. The average atomic percent of La, Zn and O elements are reported and listed in table (1). Figure 4c shows the EDS 10 elemental mapping of the1.04 at.% La-doped ZnO sample. This analysis shows the distribution of La, Zn and O ions into the lattice surface. Optical transmittance spectra of pure ZnO and La-doped ZnO films with different La contents are displayed in Fig. 5a. It is observed that all films exhibited high transparency in the visible region of 400 -- 800 nm. Furthermore, the appearance of distinct Fabry -- Perot fringes in the transmittance spectra of all deposited films are solid evidence of the high quality and homogeneity of the films surface which in turn manifest that the films are uniform and smooth. The thicknesses of all sprayed films were calculated using the interference method through PARAV software and results are listed in table (1).The optical band gaps (Eg) of all films were estimated from the Tauc's relationship between the absorption coefficient (α)2 and the photon energy (hν) using the given equation [44, 45]: αhν = A(hν-Eg)n (6) where A is the slope of Tauc line which is knowing as a band tailing parameter and n values depending on the type of optical transition, for direct allowed optical band gap n = 2. Using the well-known relation between (αhν)2 vs. hν, the Eg values for all films were determined by the extrapolation method as illustrated in Fig. 5b. The obtained values of Eg are listed in table (1). As expected from the absorption edges, the Eg showed two different behaviors against La contents. The Eg values were increased from 3.214 eV to 3.245 eV as La content was increased from 0 at.% to 0.45 at%. Then it starts to descend upto 3.194 eV with a further increase in La content upto 1.04 at.%, respectively. Band-gap widening with increasing La content in ZnO matrix is believed to be due to the Burstein-Moss (B-M) shift [46] by the higher electron density in the films through replacing Zn2+ ions by La3+ ions. Pure ZnO sample has no free carrier charges due to the ionic bond between 11 Zn2+ and O2-. With replacing Zn2+ ions by La3+ ions in ZnO matrix there will be extra free electrons in the valence band. Since the lowest states in the conduction band is fulfilled by electrons so that an additional energy is required for electrons in valence band to jump into the empty states in the conduction band. Based on the above explanation, one can expected that the values of Eg will keep increasing with increasing La3+ content due to the higher electron density in the films. Nevertheless, it was observed that the Eg values were decreased at high La content (La ≥ 0.45 at.%) which is in slightly conflict with B-M effect. This could be attributed to the formation of crystal defects in ZnO matrix with increasing La content due to the large difference in the ionic radii between Zn2+ and La3+ ions. At high La content, the interstitials occupation of Zn2+ ions by La3+ ions lead to a lattice distortion and expansion which in turn gives a new level of localized states around the conduction band causing additional transitions of free electrons in valence band to the defects band rather than the conduction band itself. The results are consistent with the XRD data. Figure 6a presents the temperature dependence of the magnetic moment measured up to 300 K with the magnetic field of 1T. It is clear that for pure ZnO sample, the paramagnetic behavior predominates which is well known for the pure ZnO as shown in Fig. 6b. La-doped ZnO exhibits a clearly magnetic hysteresis loop. It can be seen that there is an enhancement of the magnetic moment by increasing La doping in contrast to pure ZnO sample as revealed through the moment values. Theoretically Chu et al. proof that ferromagnetism could be induced by the exchange interaction between La ions and Zn ion spin moments [47]. One can see that there is an enhancement of the magnetic moment by increasing doping in contrast to pure ZnO sample as revealed through the magnetization. It is apparent that there is a proper long-range ferromagnetic order in the rich doped sample which is sharper than the lower doping. The reason 12 can also be seen in the hysteresis curve shown in the Fig. 6b. The weak ferromagnetism in our investigated samples is clear from the lack of even at higher fields. La ions substituting into the ZnO induced weak ferromagnetism and illustrates a magnetic moment without any distortion in the geometrical symmetry. It is important to note that the reduced moment values might occur due to large disordered spins in the surface as well due to grain boundaries that constitute a considerable fraction of the nanosample. By increasing La3+ content in the samples, we expected that some vacancies are generated due to the difference in the valence state between Zn2+ and La3+. These vacancies will be ordered in the unique axis of magnetization (c-axis) in our case as the films exhibited hexagonal symmetry. The magnetic moment of 1.04 at% (14x10-3 emu) film revealed 23 times higher than that of the pure ZnO one (0.6x10-3 emu). Finally, the diamagnetic dilution in the hexagonal diamagnetic lattice films of wurtzite structutre resulted in improved values of magnetic moment and ferromagnetic character which needed further investigations in our future work [48-52]. 4. Conclusion Pure and La doped ZnO thin films were successfully synthesized in single phase hexagonal structure belonging to the space group P63mc. The unit cell volume decreased with poor values and then increased again. La doping enhanced the densification but impeded the grain growth. The microstrain values are more pronounced with La doping content. The band gap increased with La doping while for high La contents and then it decreased again. The pure ZnO revealed paramagnetic trend, whilst the La doping induced ferromagnetism at different levels. From our point of view, one could recommend these films for magnetic gas sensors and in spintronic applications. 13 Acknowledgment: This research was supported by the Academy of Scientific Research and Technology through the Scientists for Next Generation (SNG-2015) Program (Grant No. FRM-SGO-22). MA thanks the Ministry of Education and Science of Russia through NUST (MISiS) Grant No. K2-2017-084 and the Act 211 of the Government of Russia, contract 02.A03.21.0004 and 02.A03.21.0011. References [1] K. Sato, H. 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B 93, 224508 (2016) Tables Table 1. Values of XRD, Roughness, EDX, optical and magnetic parameters for all as-prepared films. Sample ZO-0 LZO-1 LZO-2 LZO-3 LZO-4 LZO-5 20 Lattice parameter, a ( Å) Lattice parameter, c ( Å) Unit cell volume, V (Å)3 Theoretical density, Dx (g/cm3) Crystal size (Å) Micro-strain (10-3 %) 2.9135 2.9133 2.9130 2.9123 2.9142 2.9159 4.3702 4.3699 4.3699 4.3685 4.3713 4.3739 36.999 36.974 36.959 36.938 37.032 37.086 12.676 12.684 12.683 12.698 12.706 12.659 315.50 251.57 229.04 229.77 263.12 274.44 5.5 6.45 6.28 6.77 6.65 9.8 Roughness average, Ra (nm) Root mean square roughness, Rq (nm) 20.9 31.5 40.8 44.5 46.6 37.2 27.0 39.3 51.1 57.0 59.5 47.3 Zn K 54.15 51.97 50.72 51.83 54.18 56.85 Atomic % O K 45.85 47.69 48.83 47.51 44.91 42.11 La L 0.00 0.33 0.45 0.66 0.92 1.04 Film thickness (m) 1.284 0.788 1.212 0.684 0.511 0.566 Energy Bandgap, Eg (eV) 3.214 3.222 3.245 3.236 3.205 3.194 Saturation magnetic moment, Ms (10-3.emu) 0.63 -- -- 9.69 12.34 14.38 Figure Captions Fig. 1. XRD pattern of La-doped ZnO at different atomic ratios ranging from 0 to 1.04%. Fig. 2. FE-SEM images of pure ZnO and La-doped ZnO films. Fig. 3. Surface roughness of La-doped ZnO films as a function of La content. 21 Fig. 4. EDS spectrum of (a) pure ZnO, (b) 1.04 at.% La-doped ZnO film and (c) EDS elemental mapping of 1.04 at.% La-doped ZnO sample (LZO-5). Fig. 5. (a) Optical transmittance spectra against wavelength for pure and La-doped ZnO films and (b) the plots of (αhν)2 vs. hν and optical band-gaps evaluated by extrapolation method. Fig. 6. (a) Magnetic moment vs. temperature of the two investigated samples under a magnetic field of 1T and (b) illustrates the magnetic hysteresis (M-H) curves of three La doped samples measured at 2K. Fig. 1 22 Fig. 2 23 Fig. 3 24 (a) (d) Fig. 4 (b) (c) (e) (f) 25 Fig. 5 26 Fig. 6 27 28
1803.04643	1	1803	2018-03-13T06:19:51	Journey to the Centre of the Earth: Jule Vernes' dream in the laboratory from an NMR perspective	[ "physics.app-ph" ]	High pressure nuclear magnetic resonance is among the most challenging fields of research for every NMR spectroscopist due to inherently low signal intensities, inaccessible and ultra-small samples, and overall extremely harsh conditions in the sample cavity of modern high pressure vessels. This review aims to provide a comprehensive overview of the topic of high pressure research and its fairly young and brief relationship with NMR.	physics.app-ph	physics	Journey to the Centre of the Earth: Jule Vernes' dream in the laboratory from an NMR perspective Thomas Meier Bayerisches Geoinstitut, Universitt Bayreuth,Universittsstrae 30, D-95447 Bayreuth, Germany Abstract High pressure nuclear magnetic resonance is among the most challenging fields of research for every NMR spectroscopist due to inherently low signal intensities, inaccessible and ultra-small samples, and overall extremely harsh conditions in the sample cavity of modern high pressure vessels. This review aims to provide a comprehensive overview of the topic of high pressure research and its fairly young and brief relationship with NMR. Keywords: NMR, High Pressure Research, Diamond Anvil Cells, Micro-resonators, Sensitivity enhancement branches today[1]. It is precisely because of this challenge and uniqueness of high pressure research that we need to take a closer look at the methods available today, which allow us to recreate extreme conditions in the tiniest of spaces inside a lab- oratory. Thus, in this review, we will metaphorically retrace the footsteps of Jules Vernes' Professor Lidenbrock as he de- scends beneath the surface of the Earth, towards a strange and unknown and yet utterly enticing world - which we now know to be under extreme pressure. But why investigate pressure with NMR? While this simple question is frequently raised in an NMR en- vironment, it is not that easy to answer. As far as NMR is Contents 1 An unexpected journey for an NMR spectroscopist, a motivation 2 From Psi over Torr to kbar. The Low pressure regime as the playground for bio-chemistry and life-sciences. 3 Within the Upper Mantle: First Endeavours with DACs 4 Reaching the Lower Mantle: where things become tricky 5 Think Mega-bars! 6 A Few Last Words 7 Acknowledgements 8 Bibliography 1 2 3 4 7 10 11 11 1. An unexpected journey for an NMR spectroscopist, a motivation "Pressure. To most people the word brings to mind the stress of our lives in a time of economic crisis. Yet to many scientists, pressure means something very different; it is an idea filled with wonder and power -- a phenomenon unlike anything else we know. Pressure shapes the stars and planets, forges the continents and oceans, and influences our lives every moment of every day." These are the opening lines of Robert Hazen's intriguing mono- graph "The New Alchemists", in which the author describes the early days of modern high pressure science, and its evolution towards one of the most challenging and fascinating research Figure 1: Even on our planet Earth, pressure ranges over about seven orders of magnitude from its surface, at one bar of atmospherical pressure, to the gravita- tional centre with about 360 GPa. The schematic picture shows the inner struc- ture of the Earth together with a pressure-temperature scale and corresponding depths. Up to now, NMR techniques are able to mimic the extreme conditions of the inner mantle -- disregarding elevated temperatures for now -- correspond- ing to a depth of about 2000 km. concerned, the most typical ways to alter a given system are Preprint submitted to Progress in Nuclear Magnetic Resonance Spectroscopy October 15, 2018 8 1 0 2 r a M 3 1 ] h p - p p a . s c i s y h p [ 1 v 3 4 6 4 0 . 3 0 8 1 : v i X r a Earthsurface6370km5150km2900km660km410km40km360GPa5150K330GPa4960K135GPa3750K23GPa1950Kambientconditions1GPa640K14GPa1790KNMRlaboratoryCnottoscalepHybridResonatorsInternalResonatorsExternalResonatorsClampcellsNMRlaboratoryCnottoscalepby altering its chemical composition, e.g. through doping, in- creasing or decreasing temperature, or using high or low mag- netic fields. Pressure modifying vessels, on the other hand, are only rarely employed in NMR research, owing to substantial technical difficulties associated with the design of such appara- tuses; their demand for radio-frequency (RF) resonators, which require most NMR spectroscopists to look over the rim of their tea cup; as well as their inherent inability to use modern high sensitivity and line narrowing methods like MAS or DNP. Nevertheless, in condensed matter systems, where the inter- atomic bond strength easily exceeds several eV, utilisation of immense pressures is needed to induce significant structural or electronic changes. Other ways of increasing energy den- sity would require tremendous resources, or else are simply ex- tremely impractical. For example, the application of an external magnetic field of 50 T would only correspond to the application of about 1 GPa (10.000 atmospheres)1; a pressure which is eas- ily reached in modern diamond anvil cells. If we would start to compare these pressures with the geother- mal gradient of our planet Earth, we would have started our hypothetical journey at the bottom of the Mariana's trench, cor- responding to about 1 kbar or 100 MPa of pressure exerted by the 11 km high water pillar above us. Reaching deeper into Earth's interior, say to a depth of about 200 km in the middle of the upper mantle, the experienced pressure would be similar to the contact pressure of the Eiffel tower turned up side down and balanced on its tip, which would only be 10 GPa (about 100.000 bar). At one mega-bar, or 100 GPa, we would already have "dived" down half way through the lower mantle, and at a crushing 350 GPa our journey would come to a violent end upon reaching Earths' gravitational centre, a solid ball primar- ily comprised of iron and nickel. Clearly, Professor Lidenbrock and his companions would have come to a literally crushing end as well, had they succeeded in their quest. In modern high pressure laboratories, of course, Jules Vernes' fictional journey takes a somewhat different path. Here, pres- sures are generated by the application of pressure sustaining vessels, which are often composed of a movable piston and an enclosed pressure chamber[2]. Especially with the inven- tion of the diamond anvil cell by Charles Weir[3] and Alvin van Valkenburg[4] in 1959, high pressure science took up mo- mentum and became an integral part of contemporary chem- istry, biochemistry, physics, and geophysics[5, 6, 7]. As the technique evolved with higher quality diamonds of increasingly complex geometries, and harder materials used for the pressure vessels, the range of applicable pressures rapidly increased well into the megabar regime (1 Mbar = 1 million atmospheres)[8, 1], mimicking the extreme conditions at the centre of the Earth. Recently, record pressures of up to 1 TPa were achieved in double-stage diamond anvil cells[9]. This review's aim is threefold. Firstly, readers not familiar with this rather exotic application of magnetic resonance2 should 1The energy density of a magnetic field is given by ρB = B2/2µ0, yield- ing 9.94 · 108Jm−3 for 50 T which is roughly 1 GPa (pressure has the same dimension as energy density) 2I am omitting the specification of "nuclear" here on purpose, because the 2 gain a general impression of the "nuts and bolts" approach asso- ciated with these experimental set-ups. Secondly, I will review NMR experiments obtained using micro-coil and magnetic flux tailoring techniques, which are capable of reaching pressures from between 1 GPa and close to 1 Mbar. Closely related to this is a critical overview of some methodological difficulties arising within certain experiments, which can complicate data analysis, or might even lead to false interpretations. 2. From Psi over Torr to kbar. The Low pressure regime as the playground for bio-chemistry and life-sciences. Let us begin our journey with a pressure regime ranging over almost four orders of magnitude from ambient conditions to about 1 GPa. This is the realm of high pressure Bio-NMR, were one of the more commonly used and better known high pressure NMR set-ups is used. This approach uses so-called clamp cells, which are basically comprised of a movable piston exerting the pressure on a sample volume often as big as 100 µl . As this pressure range is still below solidification transitions of most liquid buffer media, it has been proven to be an ideal tool investigating pressure driven protein folding and unfold- ing dynamics in liquids[10, 11] under increasing compressional stages. Figure 2 schematically demonstrates the famous protein volume theorem first proposed by Kitahara et al.[10] and Li et al.[11]. As this field of high pressure NMR research is extremely extensive and already very well studied, I would like to draw the attention of the reader to the comprehensive review articles from Jonas[12], Ballard[13], and Roche et al.[14]. Figure 2: Schematic representation of the protein-volume-theorem of an arbi- trary protein in an arbitrary energy landscape. The native folded molecules of- ten occupy the highest molar volume, whereas a decrease in the overall volume leads to a destabilisation of the protein structure. techniques presented are also applicable for pulsed ESR methods. EnergyVolume'pVterm''pVterm'NativefoldedstateFoldingIntermediatesUnfoldedstate3. Within the Upper Mantle: First Endeavours with DACs Up to this point in the pressure-temperature landscape, ex- perimental conditions mimicking the pressure at the bottom at the Marianas trench, and some kilometers deeper in the Earth's crust, could easily be achieved without the application of dia- mond anvil cells. However, conditions beyond 1 GPa demand a much more powerful device. In this sense, the DAC turned out to be one of the most versatile pressure generating vessels, as it enables the experimenter to not only reach very high static pressures, but also provides him with an astonishing variability of set-ups which can be adopted to a plethora of different experimental environments. Nevertheless, performing NMR experiments in a DAC can at best be considered problematic due to the following reasons. 1) The available sample volume in a DAC is often several orders of magnitude smaller than in a standard NMR experiment. The reason behind this is obvious: We can either generate high pres- sures by applying a huge force on a sample of some dozens of mm3, which becomes exceedingly unpractical as we reach pres- sures above, say, 2 or 3 GPa. Also, these such so-called "large volume" presses are typically fairly large [15] (several meters in height, for example), thus an application in a superconducting NMR magnet would be out of the question. The other possi- bility is, of course, to reduce the size of the pressurising area. In a DAC, typical culet sizes3 are between 1.2 and 1 mm. As the sample cavity should be a bit smaller than the diameter and rather flat, we have to work with a sample of roughly 500 µm in diameter and 120 µm in height, which some NMR spectro- scopists might already consider impossible to work with. 2) The cavity is tightly enclosed by diamond from two sides, and by a very hard and often metallic gasket which seals the cavity, and provides additional "massive support" of the dia- mond anvils[16]. Thus, any available free space is located far off the actual sample. 3) If we are talking about pressures exceeding 1 GPa, we have to start thinking about hydrostaticity, that is in NMR we need a more or less uniform pressure distribution in the sample cavity, as we are detecting NMR signals from the bulk of the sample. Thus, non-hydrostatic conditions which arise if pressure media turn solid, either at cryogenic temperatures or at high pressures, can lead to ambiguous and distorted NMR spectra. The first NMR experiments in DACs emerged in the late 1980s. The main idea of these pioneering groups was to place a small RF coil operating at predominantly hydrogen frequencies as close as possible to the sample cavity without distorting the dia- monds or the metallic gasket. These set-ups include resonators which comprised, for example, a pair of coils placed on the diamonds pavilion[17, 18], a gradient-field Maxwell coil[19], or a single loop cover inductor coupled with a split rhenium gasket[20]. A more detailed overview of the development of these high pressure NMR techniques is given elsewhere[21]. The hairpin and gasket resonator approaches shown in figure 3 demonstrate a certain amount of ingenuity needed to overcome Figure 3: Two possible arrangements of NMR resonators in a DAC. A) The "Hairpin" resonator could be placed on top and bottom of the rhenium gaskets, thus forming a gradient-field Maxwell coil. After Lee et al.[19] B) The "Key Hole" gasket resonator basically consists of a copper cover inductor, which is directly connected to the spectrometer and is in electrical contact to a split rhenium gasket, leading to a focusing effect of the RF B1 field at the sample cavity. After Pravica and Silvera [20] √ the obstacles described above. With these set-ups, pressures as high as 13 GPa could be reached[22]. Nonetheless, the set-ups are far from ideal. As the hairpin resonator is far off the actual samples, the fill- ing factors in this approach are in the order of a fraction of a percent, leading to a spin sensitivity of about 1019spin/ Hz, which is roughly a factor of 100 lower compared to the standard NMR sensitivity of a static non-DNP experiment. While this improvement sounds very promising, we have to keep in mind that the sample dimensions are already decreased by a factor of about 106 in a DAC such as was used in these experiments. Thus, very long data acquisition times hampered a further ap- plication of this technique beyond its use for hydrogen NMR in liquid samples, where NMR signals are typically sharp enough to be detected after a couple of thousand scans[23, 24, 25]. Experience has shown that the problem can only be solved if the RF resonator's filling factor could be significantly improved. At the end of the 1990s, Pravica and Silvera came up with one of the most interesting ideas so far: the electrically conductive rhenium metal gasket was cut open from the sample hole radi- ally outwards, resembling a key hole4. The slit was filled with a mixture of diamond powder and NaCl, which, after careful melting of the NaCl powder, formed a homogeneous filling of the slit. Afterwards, a copper cover inductor, connected directly to the NMR spectrometer, was placed in contact with the slit- ted gasket. Therewith, NMR experiments could be performed using the electric coupling of both gasket and cover inductor, leading to a locally enhanced B1 in the sample chamber, and an increase of spin sensitivity by one order of magnitude com- pared to hairpin resonators. However, the downfall of this approach is a bit more subtle. First, as the conductivity of rhenium is one order of magnitude less than that of copper, the quality factor of the key hole res- onator gasket is rather low. Coupling of both resonators also turns the copper cover inductor into a lossy resonator. Secondly, the slit in the gasket forms a capacitor with the NaCl grains due to its conductivitiy, breaking down the electric field into small steps of floating potential in the capacitor. Now, since this ca- 3We often refer to the culet as the flattened area on the tip of the diamond anvil. 4In fact, these resonators are often referred to as "key hole resonators". 3 T/R switchhairpin resonatorrhenium gasketdiamond anvils T/R switchdiamond anvils rhenium gasketsingle loop cover inductorABpacitor is rather inaccurate, the self resonance of the slit gasket will be far off the desired resonance frequency of the nuclei in the sample, and the slit gasket basically forms a lossy induc- tance. Furthermore, both sodium and chlorine ions show in- creasing mobility when under pressure or stress, thus they move due to applied magnetic fields, warming up the gasket through thermal dissipation, and reducing the Q even further. Therefore, all proximity advantages due to the geometry are negated. These developments mark the apex of the first evolution pe- riod in DAC-NMR research. Unfortunately, only a handful of groups tackled this demanding task. Also, as sensitivities were very low and actual acquisition times exceedingly long, it was widely believed that this method could only be applied for pro- ton NMR. Nonetheless, while being able to perform NMR experiments at pressures of around 5 GPa seems to be a great accomplishment indeed, we still need to dig deeper into our metaphorical hole in the ground. Far deeper. 4. Reaching the Lower Mantle: where things become tricky Up to this point, we were merely able to literally scratch the surface of our planet. The analogy of an apple seems fitting: We would have penetrated the apple to just below its peel. So, most of the interesting things are still deeper below, awaiting their discovery. This demand for higher pressures can easily be understood then we think about chemical bonding and crystal structures. To in- vestigate transitions in the electronic or atomic environment of a solid, we need to be able to increase its energy density, i.e. the pressure, up to a point where atomic distances in a system are below a certain threshold, triggering phase transitions. Here, we are typically not only talking about structural phase transitions but also about higher order phase transitions like electronic or magnetic transitions5. Of course, the pressure needed to trigger these transitions changes from system to system. For example, the cuprate high-temperature super-conductors exhibit a layered structure with copper-oxygen layers separating their charge reservoirs[26]. These systems are prone to react rather sensitively to the application of pressure. For example, it was reported that the super-conducting transi- tion temperature Tc in Hg1−xPbxBa2Ca2Cu3O8+δ rises signifi- cantly under an application of about 30 GPa with a maximum in Tc of 164 K [27]. Inducing structural phase changes in these systems can potentially occur at pressures far below 10 GPa6, as it was reported in YBa2Cu4O8[28], followed by a complete col- lapse of super-conductivity[29, 30]. More robust systems like atomic metals, e.g. sodium or lithium, require a much higher energy density before any electronic or structural changes can occur[31, 32]. At this point, DAC-NMR appeared to be stuck in a crisis until into the late 2000s. It was quickly realised that two major prob- lems should be solved, the first being to achieve stable pressures above 10 GPa with good sensitivities, allowing for realistic and time-saving experiments on nuclei other than 1H or 19F, with sample dimensions rapidly decreasing due to the demand for higher pressures. The second issue was a minimisation of the diamond anvils to a point below what was possible at that time in NMR spectroscopy. Apparently, the most promising solution was to use RF micro- coils as close as possible to the sample, even if that would mean to place them directly in the sample chamber. From an NMR perspective, the use of micro-coils is preferable to other meth- ods, as they were shown to exhibit excellent mass sensitivities and large bandwidths due to their small size.[33, 34]. Placing such minuscule coils in the pressure chamber of a DAC, how- ever, turned out to be a demanding task. To begin with, the micro-coils would have to be about a factor of 4 to 5 smaller, compared to micro-coils pioneered and characterised before [35, 36]. Furthermore, the issue of safely guiding the coil's leads out of the chamber requires either the use of gold liners, which are prone to rupture under stress, or the carving of channels into the metallic gaskets, which is greatly compromising the overall stability of the DAC under load. In 2009 Suzuki et al.[37] presented an intriguing study on the 51V-NMR of the one dimensional conductor β-Na0.33V2O5 up to 8.8 GPa at cryogenic temperatures. In their figure 1b, a mi- crocoil can be seen placed in the cavity of a Bridgman-type pressure cell7. Unfortunately, the authors did not celebrate this ground-breaking advancement of the field with a separate publi- cation, introducing this approach to a wider NMR community. That was done a short time later in the same year by another group using a strikingly similar set-up[38]. Both these set-ups were predominantly used by solid-state physi- cists investigating highly correlated electron systems at low tem- peratures. In 2011, about the time when I started to work in this field at the University of Leipzig, Meissner et al.[39] re- ported the pressure induced closing of the spin pseudo-gap in YBa2Cu4O8 at pressures up to 6 GPa and temperatures of about 100 K. The pressure cells were manufactured to be fairly small, Figure 4: Left: Miniature non-magnetic DAC made from Titanium-6%wt Aluminium-4%wt Vanadium Right: Schematic diagram of all parts of the DAC. Figure from [40] only 22 mm in length and 18 mm in diameter, and thus could be used in a small bore super-conducting NMR magnet, see figure 5which do not necessarily coincide with first order phase transitions. 6If the experiments were conducted carefully, and special care has been taken to ensure hydrostatic pressure conditions. 7which has the same working principle as a DAC, but uses metallic anvils often made from non-magnetic WC. 4 4. Similar to the work of Suzuki et al. an average pressure of about 4 to 7 GPa could be realised easily[41, 42]. Even more important than the achieved pressures, which were comparable to the set-ups discussed in the last chapter, was the finding that the microcoil set-up yielded very high signal-to- noise ratios, see figure 5, which could be translated to a spin sensitivity of about 1013spin/ Hz which is almost four orders of magnitude lower, and thus much more sensitive compared to the set-ups shown in chapter 3[43]. Working in an environment dominated by physicists, we fo- √ Figure 5: 1H-NMR spectrum after a single shot on water at ambient conditions at a magnetic field of 7 T. Left inset: proton background of the empty cell. Right inset: recorded proton nutation data. Figure from [40] cused our research not on structural determination, or more chemically motivated questions under pressure8. Our main fo- cus was the change of electronic properties of solids, i.e. pres- sure induced changes in a solids' band structure, or changes in the occupancy of energy levels of a metals' conduction elec- trons. If we think about a solid, be it a metal, semiconductor, or in- sulator, we realise immediately that reducing the inter-atomic distances will inevitably have a large effect on the solids band structure. The most pronounced of these effects is the transition from an insulator to a metal, i.e. a pressure triggered electron delocalisation. Decreasing the distances between atoms often leads to a broadening of valence and conduction bands, culmi- nating in an overlap of both bands triggering electronic conduc- tivity. Of course, such a drastic effect will also significantly influence observable NMR parameters, like spin relaxation, or resonance frequencies. Typically, we can define two distinctively different regimes in NMR. On the one hand, there are insulators, e.g. most organic material is insulating, where the shift of resonance frequency is mainly governed by the diamagnetic shielding of the nuclei by low energy paired-up electrons. Thus, the shift is often small, in the range of some ppm. Spin lattice relaxation is predominantly given by dipole-dipole coupling for I = 1 2 nuclei or quadrupolar interactions for I > 1 2 nuclei, and is often in the range from 1 ms up to hours[44]. 8Which will, without a doubt, yield an amazing amount of new phenomena even in the lower pressure range in the near future. 5 On the other hand, as was realised already in the early days in NMR, resonance frequencies in a metal are profoundly higher compared to a non-conducting salt containing the same nucleus[45]. This so-called Knight shift, named after Walter D. Knight in 1949, is a direct consequence of Pauli-paramagnetism, i.e. the hyperfine interaction of the s-like conduction electrons with the nucleus. This electron-nuclear coupling in fact proved to be so dominant that observable Knight shifts are often two to four orders of magnitude higher than the chemical shifts of the in- sulating compounds of a given metal. Furthermore, Korringa found[46], based on nuclear relaxation theory from Heitler and Teller[47], that the spin lattice relaxation times in a metal must also be directly correlated to the hyperfine interaction felt by the nucleus. The famous Korringa relation combines both Knight shift K and T1, and shows that the ratio of K2 and T1 at constant temperatures only depend on natural constants, and the gyro- magnetic ratios of the electron and the nuclei. As the Korringa relation should also be independent of volume, it is a perfect tool to probe and identify metallisation processes. Coincidentally, we were given a sample of nano-crystalline AgInTe2 powder at the time, synthesized by our chemistry department in Leipzig University [48, 49]. This compound, which is semi- conducting at ambient conditions, was believed to become fully conducting at the chalcopyrite to rocksalt structural transition[50], occurring in a pressure range between 4 and 6 GPa. First experiments on AgInTe2 powdered samples, which has not been characterised by NMR so far, showed that the 115In spectra displayed a first order quadrupole interaction -- indium is nuclear spin 9/2 -- with a quadrupole frequency νq of about 45 kHz, thus the 8 satellite transitions were found to be heav- ily broadened and merged into a broad symmetric background around the sharp central transition, see figure 6. The spectra were found to be relatively strong shielded, having chemical shifts of about -400 ppm relative to an aqueous solution of an indium salt. Furthermore, T1 relaxation times were found to be in the range of some 10 ms, indicating relaxtion mechanisms governed by quadrupole interaction. Up to about a pressure of 4 to 5 GPa, these parameters were not found to change significantly. Above 5 GPa, however, both the resonance shift as well as T1 changed rather drastically by about 9000 ppm higher in frequency, and two orders of magnitude faster relaxation times. Combining both effects, the Korringa relation was found to suddenly become volume independent, and not change in a pressure range from 8 to 20 GPa, indica- tiong electron delocalisation in AgInTe2. Up to this point, we had not payed much attention to the prob- lem of hydrostaticity for NMR experiments at pressures above 7 GPa. At these compressions, most of the commonly used pressure transmitting media, like glycerol or Daphne, are solid- ified. This leads to so-called dry contact of the diamond faces with the gasket and sample, and will result in pronounced pres- sure gradients. Unfortunately, the influence of non-hydrostatic pressure conditions on NMR spectra or relaxation mechanisms has not been investigated in detail so far. Nevertheless, there is mounting evidence of the importance of this issue for some systems. A good illustrative example is the behaviour of metallic alu- 5101500.51.0backgroundwaterPulse-length-[µs]Intensity0-1.01.001020-10-20[kHz]f---f0f---f0-[MHz]110-ppm1.6-ppmFigure 6: Top panel: Recorded 115In-NMR powder spectra recorded using a quadrupole echo sequence at ambient pressure (red) and at 20 GPa (blue). The vertical shift was introduced for better comparison. Inset: Obtained frequency shift values recorded over the full pressure range in these experiments. Bottom panel: Magnetisation recovery curves obtained during inversion recovery ex- periments as a function of the separation pulse ∆ between the 180◦ inversion pulse and the detection pulses. Inset: Korringa ratio as a function of pressure. The dotted line depicts the expected values from a free electron metal of Indium atoms. minium under pressures up to 10 GPa. In 2014, Meissner et al.[51] presented experiments on the 27Al-NMR spectra of metal- lic Al powder. There, the authors claimed that the observed de- viation of the Knight shift and the sudden increase in linewidth at about 4 GPa must be due to a so-called Lifshitz transition, which occurs if a van-Hove singularity of a given energy band in the solid's band structure crosses the Fermi energy EF, and becomes partly filled or unfilled. One might argue that such transitions should be ubiquitous in solids under pressure, as the band structure typically changes quite significantly under com- pression. However, direct experimental observation of such an effect has been scarce, because these effects are typically smeared out by thermal excitations close to EF. Thus, they should only be observable at low temperatures of about 10 K or below. Unfortunately, no low temperature experiments could be published confirming these findings at 300 K. Careful re-examination of the experimental conditions, how- ever, led to a slightly different, and much more simple, inter- pretation of these findings. In fact, the 'smoking-gun' evidence correlating the transitions found with the experiment itself was that 4 GPa, the pressure where both observed effects on the 27Al spectra became dominant, coincides with the reported crystalli- sation point of the glycerol pressure medium used. Thus, new sets of experiments using paraffin oil as a pressure medium, which solidifies at much higher pressures of about 12 to 13 GPa, showed that both the deviation of the Knight shift as well as the increase in linewidth strongly followed the onset of non- hydrostatic pressure conditions. A more detailed account for these effects are given in [21]. Thus, by now, every NMR spec- troscopist should be aware of the deceptional effects occuring when at sufficiently high pressures, their pressure media begin to cristallise. Within the five odd years of my working with micro-coils, Figure 7: Height of the sample cavity for different pressures for various gasket materials. Taken from [52] some serious limitations became obvious. Due to the limited space available in the sample chambers in a DAC, very thin in- sulated wires had to be used to prepare the coils. Of course, companies providing thin insulation wires made from copper or gold are sparse, and acquiring larger amounts often rather expensive. Furthermore, only organic insulating materials were possible to deposit on the wires, thus limiting their application to low γn NMR nuclei, because hydrogen backgrounds exces- sively overlapped with 1H-NMR spectra. Finally, copper wires sold by Polyfil could be acquired. With these 18 µm thick wires, insulated with Polyurethane, coils of 3 to 6 windings could be manufactured. Thus, the coils had approximate dimensions of 200 - 500 µm in diameter and 80 to 160 µm in height. To reach higher pressures, smaller culet faces must be applied, which re- duces the initial sample cavity quite significantly. This leads to certain boundaries of the applicability of micro-coils in DACs. To give one example, using a pair of two 500 µm culeted anvils, reaching about 40 GPa on average, requires a sample volume of 160 µm in diameter and 40 to - 50 µm in height for best stabil- ity; but this would require micro-coils to be made having only two turns, which is almost impossible to manufacture. Another serious problem originated in the use of the gasket ma- Figure 8: Photograph of the composite gasket assembly. The diamonds used in this photograph were culeted to 600 µm. Taken from [52] terial. Due to its low magnetic susceptibility, Cu-Be chips were used as gaskets blanks. Unfortunately, this alloy turned out to 6 Shift [1000 ppm]0369Pressure [GPa]05101520Pressure [GPa]05101520K5sTR12-1[µsK]0.110S115 = 5.42 µsKDelay Δ [ms]IntensityIntensity0-0.510.5Pressure [GPa]5.210-48.22.012.23.620.2a)b)10-310-210-1100101102Frequency [MHz]109.5110110.5111ambient20.2 GPa0.511.5CuBediamond / epoxyc-BN / epoxyPressure [GPa]Gasket thickness [µm]5010015020025051015202530α-Al2O3 / epoxy500 µmbe quite soft under compression, leading to sample height re- ductions of almost a factor of four within some GPa, see figure 7. Such a pronounced cavity collapse would lead to significant deformations of the RF micro-coils, leading to B1 field inhomo- geneities and, thus, reduced sensitivity within a single pressure run. Therewith, the quest for a method for gasket stabilisation was on. A possible solution was found by using so-called compos- ite gaskets, which are made by replacing the pre-indented part of the gasket with a rigid matrix of a nano-crystalline ultra hard material, like diamond or c-BN. A photograph of such a gasket design is shown in figure 8. Here, an amorphous mixture of α − Al2O3 and epoxy was used within a DAC, using a pair of 600 µm anvils. It could be shown that these gaskets allow for significantly sta- bilised cavities as illustrated by the much bigger recovered gas- ket heights in figure 7. Figure 9 shows time domain solid echoes, as well as their Fourier transform, at pressures up to 30 GPa. As Figure 9: Upper part: 27Al solid echoes of Cr:Al2O3 up to 40 GPa. The spec- trometer was blanked off for 5 µs. Lower panel: Corresponding NMR spectra after Fourier transform. Both spectra and time domain signals were offset in the y axis for better comparison. can be seen, even at 30 GPa, features in both time and frequency domain remain sharp, while at the same time allowing for rather high excitation bandwidths. These experiments mark the high point in micro-coil high pres- sure research. The difficulty in preparing the set-ups, however, greatly limited the applicability of this approach, since they seem to resemble an art form rather than a reliable and repro- ducible method of science. Also, the results shown in figure 6 and 9 can actually be considered singular events, and an average pressure limit of about 7 to 8 GPa using micro-coils in DACs would be reasonable. Unfortunately, most prominent questions 7 in contemporary physics, chemistry and the geosciences ap- pear to happen at considerably higher pressures. Thus, in order to reach even deeper into the Earth, completely new resonator structures needed to be developed. The Mega-Bar regime awaits! 5. Think Mega-bars! Our journey is almost at an end. Despite what the title of this chapter suggests, NMR experiments above 1 Mbar, or 100 GPa, have not been realised so far. But it is a close call. In the course of the last year, high pressure NMR gained mo- mentum, and routinely reaching pressures above 30 to 40 GPa could be feasible even for a broader NMR community. But let us start at the beginning. At the end of the last chapter I have summarised attempts to conduct magnetic resonance at pressures well above 10 GPa. This research also coincided with me obtaining my PhD, and moving on to a purely high pressure oriented institute. Here, it instantly became clear that pressures well above the state-of- the-art must be realised. Having gathered all the experience from implementing micro-coils in DACs, we began looking for a completely different approach. Experimenting with planar micro-coils or even micro-striplines, it quickly became apparent that something much more robust must be used, as both micro coils and striplines did not sus- tain the exceedingly high deviatoric stresses in a DAC made for Mbar measurements. The revelation came in form of magnetic flux tailoring Lenz lenses (LL), pioneered by the group of Prof. Korvink in the KIT[53, 54]. These passive electro-magnetic devices are governed by Lenz' law of induction, and could be shown to locally amplify the RF B1 field at the sample chamber. This very handy focussing ef- fect is predominantly given by the geometry of these lenses. In a two dimensional plane, an outer winding builds up current, which is induced within a small region along the rim of the lens by an excitation coil. The current is fed into the inner part of the lens, where an anti-winding deposits the magnetic field within the LL's inner diameter[55]. Any sample within this inner hole would consequently feel a much higher B1 than without a lens. In this sense, these LLs work as a flux transformer, and display an astonishing degree of flexibility in terms of their field of ap- plication. Of course, we immediately tried to implement these fascinating devices into one of our pressure cells. We used not a symmet- ric arrangement of diamond anvils at first, but two anvils of much different culet sizes. These so-called indenter cells are often used for feeding small wires into the sample cavities, as the gasket only deforms in the direction of the sharper anvil, leaving a lot of space under the gasket open for further manip- ulations. Thus, we decided to use a 800 µm base and a 250 µm primary anvil. The LLs were cut out of 5 µm thin gold foil -- 600 µm outer diameter and 100 µm inner diameter -- care- fully placed at the centre of the base anvil, and aligned with the 100 µm sample hole of a rhenium gasket. The gasket was covered with a thin layer of korundum in order to electrically insulate it from the LL. The excitation coil was placed directly 0123Pmax[GPa]30.527.221.812.410-4int. [a.u.]P[GPa]30.527.221.815.712.410-4f - f [kHz]0t [µs]0200400-200-40050100150on the pavilion of the base anvil to achieve sufficient inductive coupling into the LL. Figure 10 shows this set-up. This set-up Figure 10: Schematic explosion diagram of the resonator setup and the anvil/gasket arrangement. The blue and red arrows denote the directions of the external magnetic field B0 and the RF magnetic field B1, respectively, generated by the excitation coil and the lens, which is compressed between the rhenium gasket and the 800 µm culeted diamond anvil. The enlarged picture shows the RF arrangement of the excitation coil with the Lenz lens. Black arrows denote the directions of the high-frequency current. Taken from [56] √ proved not only to be exceedingly stable under compression, but also to yield much higher sensitivities compared to all other methods so far. Figure 11a shows one of the first test scans us- ing paraffin oil as a sample. As can be seen, in the case when no LL is used (i.e. NMR experiments only performed with the bigger excitation coil residing at the base anvils pavilion), SNR is very poor, in the order of 10−3 after a single scan. Using the LL, however, leads to a significant increase in SNR by almost four orders of magnitude, corresponding to detection limits of only 1012 spins/ Hz. The lenses were found to be mechani- cally stable under compression, see 11b. The overall shape of the LL was kept more or less intact up to a pressure of 72 GPa. Further increase in pressure led to the destruction of the anvils. In 11c, 1H-NMR spectra of paraffin at increasing pressures of up to 72 GPa are shown. These spectra are all acquired after a single scan and demonstrate impressively how the spin sensi- tivity basically remains constant under compression; this is in drastic contrast to what was observed with the micro-coil set- up. The attentive reader might have recognised that the spin sen- sitivities realised with the LL resonators are about 2 up to 4 orders of magnitude lower, thus more sensitive, compared to the micro-coil set-ups. The reason for this might strike some as trivial, but I would like to explain it nonetheless. Consider using a micro-coil of 150 -- 200 µm in height and about 300-400 µm in diameter in a DAC equipped with two 800 µm anvils. The sample cavity in such a DAC is most often much bigger than what is considered a 'safe' pressure cell9. Under compression, of course, such a DAC can be at best con- sidered rather unstable, and the sample cavity is prone to col- lapse due to significant flow of the Cu-Be metal. Thus, every micro-coil will be subject to immense deformations, leading to a decrease in the 'effective' sample cavity. To underline this thought, numerical simulations have been conducted of the RF B1 fields in a micro coil set-up as well as for a LL-resonator, see figure 12. In accordance with similar calculations from van Bentum et al.[57], the B1 field map in the x-z plane of a flat micro-coil, with a length-to-diameter ratio of less than unity, the magnetic field is fairly inhomogeneously distributed, with the highest magnetic fields close to the respective windings. The effec- tive observable sample volume, Ve f f , with a B1 homogeneity within 20% of the central field, is about 1.7 nl, which is about 14% of the total available sample space, and stores only 6% of the total magnetic field energy of the micro-coil. Moreover, as indicated by the deformed resonator, the B1 field homogene- ity greatly suffers from an irregular arrangement of the current- carrying wire segments of the micro-coil. This deformed state typically arises already at relatively low pressures. Depend- ing on the choice of gasket materials and the geometry of the sample cavity, a collapse can occur at relatively low pressures of some GPa, which will lead to significant deformations of the interior of the cavity, including the placed micro-coils. In this particular case, Ve f f drops to a 1/20th of a percent because of significant B1 field inhomogeneities, while at the same time storing only about 0.003% of the total magnetic field energy. In addition, at these compressions, the risk for coil gasket or inter turn short circuits increases rapidly[42], rendering the applica- tion of micro-coils in DACs increasingly unreliable above 10 GPa. In the case of the Lenz lenses, on the other hand, the RF B1 field appears to be homogeneous over more than at least 40 to 50% of the total sample cavity, storing about 30% of the magnetic field energy. Strikingly, under compression, the situation does not deteriorate significantly, and both the stored energy (35 %) and Ve f f ( 47 %) remain almost constant. The B1 field strengths of the LL resonators found in the simulations compare well with the actual field strengths found via nutation experiments, which is further evidence of the applicability of this approach. Application of LLs in DACs proved to be a real game changer. From now on, diamond anvil cells of standard design could be used, closely following well established preparation guide lines[58]. This opens, at least in principle, the door for NMR at 100 GPa! Let us proceed to the most recent technical advancement. Using a diamond indenter cell, as in the aforementioned case, poses some limitation on the maximal reachable pressure ranges (if two diamonds of different culets typically have a somewhat lower maximal pressure than two identical diamonds). For ex- ample, two diamonds of 500 µm culets might reach pressures of about 40 GPa. But if we were to substitute one anvil with a 9In fact, we often prepared DACs like this to use as much sample as possible due to limited sensitivity. 8 diamondanvil(800µmculet)diamondanvil(250µmculet)rheniumgasketexcitationcoilLenzlenssampleFigure 11: Sensitivity and stability tests of the Lenz lens resonator setup in a DAC. (A) Proton spectra of paraffin at ambient pressure with and without the use of a Lenz lens. (B) Photographs of different deformation states of the lens under pressure. Black contours are guide to the eye. (C) Recorded 1H NMR spectra. At ambient conditions, 100 scans were accumulated, whereas at higher pressures, only single-shot spectra after a single π/2 pulse were recorded. (D) Pressure dependence of the FWHM linewidths. The dotted line denotes the crystallisation pressure at ambient temperature, and the shaded areas denote the liquid and amorphous phases of paraffin. The glass transition pressure was obtained from other methods Taken from [56] 700 µm culeted anvil, the maximal pressure could drop to be- low 30 GPa. Thus, if we want to penetrate the Mbar regime, we need to develop a method for using the LLs in a symmetrical arrangement of anvils. With the introduction of the so-called Double Stage Lenz Lens (DSLL) resonator, this problem could be solved[59]. The set- up uses a thin layer of deposited copper on the complete surface of the anvils. A structure of two lenses was cut into this layer using a focused ion beam. The first stage LL is situated along the pavilion of the anvil, with its inner diameter slightly below the diamond's culet face. The second stage LL is the main driv- ing LL and lies directly on the culet. It has an outer diameter of 250 µm and an inner diameter of 80 µm, closely following the sample hole diameter. The DSLL resonator is driven by a multi-turn copper coil of 4 mm in diameter placed around the diamond anvil. This resonator structure was also realised on the other anvil. After loading and pressurising, both driving coils were connected to form a Helmholtz coil arrangement. Fig- ure 13 shows photographs into the pressure cell equipped with such a DSLL resonator, and a BX90 pressure cell on a wide- bore NMR probe. The working principle of these DSLL-resonators is similar to the single LL resonators with an additional LL to further focus the B1 field at the sample chamber. One could ask why an ap- plication of a single LL would not work as well; the reason is that a single LL running over the sharp edge of the culet would √ have been cut off under compressional strain. Furthermore, as this ripping off would most likely not occur in an evenly mat- ter, the complete resonator would inevitably turn into a lossy inductor. First experiments have been performed recently on an initial sample of 100 pl of water. Figure 14 shows an obtained solid echo train at 90 GPa. For these experiments, only 1000 scans were accumulated, resulting in a SNR per shot of about 39, and a time domain limit of detection of 5 · 1011spins/ Hz, which is about a factor of two lower than in the case of a single LL. This last development is particularly easy to prepare, as no time consuming alignment processes, or meddling with micro- coils, is necessary. Furthermore, these are the first experiments with a standard DAC allowing to access the complete available pressure range of the chosen diamond. In this case, 90 GPa is widely considered to be the limit for standard Drukker-type di- amonds of 250 µm without a bevel. In fact, X-ray absorption measurements on these cells at 90 GPa have shown the dia- monds to be heavily stressed, leading to a cupping of the culet faces to a degree that both diamond rims are almost touching one another. Thus, a further increase in pressure will certainly result in complete destruction of the anvils. As already stated at the beginning of this chapter, the border to the Mbar regime has not been passed yet, but the recent de- velopments leaves one to argue that this might only be a mat- ter of time. Of course, application of smaller culet sizes, and thus higher pressures, will inevitably reduce the available ini- 9 bd7GPaK9GPaM4GPaKGPaKbarinitialshape6==µmK==µmM=µm49GPa64GPa7WGPaABABexcitationcoilsamplelensH(Frequency[kHz]K=W5(W55=(5=75(75K==(K==adcdddFigure 12: Magnetic field maps of the B1 fields generated by a micro-coil of four turns (400 µm in diameter and 100 µm in height, left), and of a Lenz lens made from a solid sheet of gold foil (right). Above the initial configurations, the figure shows two deformed set-ups at a stage where the initial height and diameter of the sample cavity are reduced by 50%, occuring well below 10 GPa when bigger CuBe gaskets were used. Using flat rhenium gaskets, this state of deformation typically occurs at substantially higher pressures. Indicated as an overlay are the geometries of both RF resonators and the corresponding gaskets. The deformed state of the micro-coil was reproduced from a photograph of an opened pressure cell working up to 6 GPa. Different gasket materials were used in both set-ups, which were also included in the simulations. The dotted lines represent the effective observable sample volume. Taken from [56] Figure 13: Upper photo: completely prepared DSLL-resonator for a DAC equipped with two 250 µm culeted anvils. Lower photo: mounted pressure cell on a home-built NMR probe tial sample volume; but on the other hand, the sensitivity of the DSLL-resonator will benefit from the increased proximity due to smaller inner diameters of the second stage LL, as well as a reduced distance between both pairs of LL on the advancing diamonds. Figure 14: Recorded solid echo train of high pressure ice X at 90 GPa. The spectrometer was blanked off for 4.6 s after the second 90 pulse (grey area). Taken from [59]. 6. A Few Last Words Within this admittedly rather short overview about the tech- nical evolution of high pressure NMR devices, we came across an extraordinary degree of ingenuity. Every little step towards the final installments has certainly been difficult, riddled with mishap and frustration. Nonetheless, the pressure possible nowa- days surpasses what was thought possible some years ago al- most a hundred fold. It is often said that progress in diamond anvil cell research is by no means revolutionary but evolutionary, every advancement in the field comes together with a new problem longing for a so- lution. This thought seems to be particularly accurate for high pressure NMR. At this point, DAC-NMR advanced both in terms of NMR sen- sitivity and in achievable pressures to an amount which was widely believed impossible. In fact, over the course of my rel- atively short academic career, I was met with both disbelieve and ridicule about my vision to perform NMR above 100 GPa. But, as years went by and the field went forward, the voices of the skeptics became increasingly quieter. And as we face the world of real high pressure, both NMR and high pressure 10 100200-100-2000x[µm]1007550250z[µm]7.96.34.73.21.60.02B1[mT]4.84.13.52.82.11.4B1[mT]0102030z[µm]2550-25-500x[µm]covered diamond anvils (250 μm culet)Helmholtz pair excitation coils Rhenium gasketCu-Be backing platec-BN backing plateBX90 pressure cell cell holderhome-built wide-bore NMR probe 1.00.80.60.40.20-0.290 GPaτπ/2π/2ττ20 µs25 µs35 µs45 µs55µs75 µs95 µst [µs]Intensity [a.u.]20406080100120140communities slowly begin to show interest in each other. 7. Acknowledgements I am particularly thankful to Leonid Dubrovinsky, who of- fered me a safe haven to pursue my research. Without his en- couragement and enthusiasm, we would not stand were we are today. The same holds true for Jan Korvink, who showed me that it is always worthwhile to look beyond the own comfort zone and find solutions where you would not expect them. Also, I want to thank my wife who, despite endless proof readings, al- ways encouraged me, even in times of upmost discord. Finally, I want to thank the editorial board of PNMR for the chance to write about my story and my contribution to, what I think, is one of the most intriguing new research brands for the magnetic resonance community. 8. Bibliography References [1] R. M. Hazen. The New Alchemists - Breaking Through the Barriers of ISBN High-Pressure. Random House, New York, first edition, 1993. 978-0812922752. [2] P. W. Bridgman. Physics of high pressure. Dover Publications, New York, first edition, 1952. [3] C. E. Weir, E. R. Lippincott, A Van Valkenburg, and E. N. Bunting. In- frared studies in the 1- to 15-micron region to 30,000 atmospheres. 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A comparison of Lenz lenses and LC resonators for NMR signal enhancement. Concepts in Magnetic Resonance Part B: Magnetic Resonance Engineering, page e21357, nov 2017. doi: 10.1002/cmr.b.21357. [56] T. Meier, N. Wang, D. Mager, J. G. Korvink, S. Petigirard, and L. Dubrovinsky. Magnetic Flux Tailoring through Lenz Lenses in Toroidal Diamond Indenter Cells : A New Pathway to High Pressure Nu- clear Magnetic Resonance. axiv:1706.00073, pages 1 -- 10, 2017. [57] P. J. M. van Bentum, J. W. G. Janssen, A. P. M. Kentgens, J. Bart, and J. G. E. Gardeniers. Stripline probes for nuclear magnetic resonance. Journal of Magnetic Resonance, 189(1):104 -- 113, 2007. doi: 10.1016/j. jmr.2007.08.019. [58] M. I. Eremets. High Pressure Experimental Methods. Oxford University Press, Oxford New York, first edition, 1996. [59] Thomas Meier, Saiana Khandarkhaeva, Sylvain Petitgirard, Thomas Korber, Ernst Rossler, and Leonid Dubrovinsky. NMR close to Mega- Bar Pressures. in Preparation, 2018. 12
1902.01121	1	1902	2019-02-04T10:51:03	Metasurfaces with Interleaved Electric and Magnetic Resonances for Broadband Arbitrary Group Delay in Reflection	[ "physics.app-ph" ]	Metasurfaces impart phase discontinuities on impinging electromagnetic waves that are typically limited to 0-2$\pi$. Here, we show that they can break free from this limitation and supply arbitrarily-large phase modulation over ultra-wide bandwidths. This is achieved by implementing multiple, properly-arranged resonances in the electric and magnetic sheet admittivities. We demonstrate metasurfaces that can perfectly reflect a broadband pulse imparting a prescribed group delay without distorting the pulse shape, opening new possibilities for temporal control and dispersion engineering across deeply subwavelength physical scales.	physics.app-ph	physics	Metasurfaces with Interleaved Electric and Magnetic Resonances for Broadband Arbitrary Group Delay in Reflection O. Tsilipakos 1, Th. Koschny 2, C. M. Soukoulis 1,2 1 Institute of Electronic Structure and Laser, FORTH, 71110, Heraklion, Crete, Greece 2 Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa, 50011, USA [email protected] Abstract -- Metasurfaces impart phase discontinuities on impinging electromagnetic waves that are typically limited to 0−2π. Here, we show that they can break free from this limitation and supply arbitrarily-large phase modulation over ultra-wide bandwidths. This is achieved by implementing multiple, properly-arranged resonances in the electric and magnetic sheet admittivities. We demonstrate metasurfaces that can perfectly reflect a broadband pulse imparting a prescribed group delay without distorting the pulse shape, opening new possibilities for temporal control and dispersion engineering across deeply subwavelength physical scales. I. INTRODUCTION Metasurfaces, i.e., ultra-thin periodic configurations of subwavelength resonant meta-atoms, have attracted considerable interest in recent years for an abundance of applications. Providing both electric and magnetic response (i.e., combining electrically and magnetically polarizable meta-atoms) allows for unidirectional scattering -- a direct generalization of the Kerker conditions. In addition, the combination of electrically- and magnetically-resonant behavior can extend the underlying phase modulation to 2π. High transmission with an underlying 2π phase shift can be achieved with a pair of matched electric and magnetic resonances and allows -- by Huygens' principle -- for full control over the wavefront [1]. However, the delay-bandwidth product is still limited, restricted by the maximum 2π shift obtained over the narrow bandwidth of the matched resonance pair, thus limiting the potential of metasurfaces for dispersion engineering applications. In this work, we demonstrate that metasurfaces can overcome this longstanding limitation on the imparted phase discontinuity. This is achieved by abandoning the singly-resonant nature of conventional metasurfaces in favor of the collective response of multiple, properly-arranged electric and magnetic resonances in the effective sheet admittivities. We focus on operation in reflection and specify the required admittivities for achieving arbitrarily-broadband uniform response with an underlying phase modulation greatly exceeding 2π. As an example capturing the rich possibilities of the proposed approach, we construct tunable group delay metasurfaces by requiring an exactly linear reflection phase; this way broadband pulses can experience the desired group delay with zero pulse distortion. We provide realistic implementations with few Lorentzian resonances accommodating broadband signals and assess the performance by studying the available spectral and angular bandwidth. II. METASURFACES WITH INTERLEAVED RESONANCES FOR ACCUMULATIVE REFLECTION PHASE In three-dimensional structures, providing a monotonic reflection phase greatly exceeding 2π is straightforward. Consider for example the grounded dielectric slab (also known as Gires-Tournois etalon) depicted in Fig. 1(a), exhibiting multi-resonant behavior by relying on phase accumulation in the bulk. In metasurfaces, on the other hand, phase delay can only be provided by effective material resonances (i.e., those of the constituent meta-atoms). Our first goal is to determine the proper way of arranging multiple resonances so that the respective shifts combine constructively adding up to an accumulative monotonic reflection phase. Consider a metasurface described by macroscopic, homogenized electric and magnetic resonant surface sm . The equations relating the surface admittivities with reflection and transmission [2], ) (   with admittivities coefficients are  where we have defined effective sheet admittivities    m   or TΜ ( ) se and ( ) ,   and ) / ( 1 )       m e    ( / (2 ) , ( ,      sm sm se  depending on the polarization.    )  m     se  cos t  (1 , (    / 2 )  e m   and  e m      c se e m  )  ) / ( 1    e   ( )   /  k )  TE  e k   / ( r  1 Typically, metasurfaces feature a singly-resonant behavior in the electric admittivity, resulting in a narrow high-refection band with an underlying π phase shift. Increasing the reflection phase span and bandwidth by multiple single-nature resonances is not possible, as shown in Fig. 1(b). At the point where the respective susceptivity (imaginary part of admittivity) contributions compensate each other, the polarization shifts from anti-phase to in-phase and the reflection phase from 3π/2 to π/2. Reflection phase monotonicity can be achieved by interleaving electric and magnetic resonances, Fig. 1(b). In this case, the electric susceptivity zero-crossing is masked by the magnetic resonance and the reflection phase shows up monotonic. Notably, Fig. 1 illustrates that ultra-thin metasurfaces can emulate the scattering properties of thick bulk structures by replacing the phase accumulation in the bulk with a series of effective material resonances implemented on the surface itself. Note that the transmission phase in both cases of Fig. 1(b) is non-monotonic. Transmission phase spans greatly exceeding 2π can be achieved by concatenating multiple sets of matched resonances [3]. electr.-electr.-electr. electr.-magn.-electr. e e m (a) εr kinc Diel. Metal e s a h P n o i t c e fl e R 6π 4π 2π 0 (b) kinc -2π 0 0.5 Frequency 1 [ /(√ c r dε 1.5 ) ] d λ> λ<< d s e i t i v i t t i m d A . ff E 5 0 -5 3π 2π e s a h P . s n a r T / . fl e R π 0 r t Im Re r t 100 80 Frequency ( 1 02 ) a.u. 100 80 Frequency ( 1 02 a.u. ) Fig. 1. (a) Grounded dielectric slab: 3D resonant structure with monotonic accumulative reflection phase relying on phase accumulation in the bulk. (b) Multi-resonant 2D metasurface: Interleaving electric and magnetic resonances results in a monotonic accumulative phase profile. III. ARBITRARILY-BROADBAND FLAT REFLECTION WITH ZERO GROUP DELAY DISPERSION ) Gaining ample control over the reflection phase can be exploited for performing dispersion engineering across deeply subwavelength physical scales. As an example, we focus on metasurfaces that can delay arbitrarily-broadband signals without pulse distortion. Mathematically, we demand and t   , where 0 is the desired group delay and A allows for some absorption in the metasurface. The 0 ( these effective are 1   them with physically-realizable Lorentzian sm   resonances we end up with the recipe [2]:  A [2]. Approximating admittivities (1 ) / (1   that i  e ) 0 coefficients i exp( )  0 scattering strictly satisfy  A e A ( )  i  0   se r e    se  i  e i    2 ln ( m / 2 cor / 2 e 1/2 )] /  A 2 ln( i   2 i      k 1 e k ,  k  ), k ( 1,2, )   0 cor     A , and ) /  e e 0 A 0.9.  2 2 where m  e Eq. (1) is plotted in Fig. 2(a) for [(2   e k , , 4 /   0  ,  e  m k , [2(1   sm  2 m    k 1  2 k 1) ]   ln ) / ( i   2 i     m k , 2 ln ( )}  A )]  e ,  m 1/2 /    ), {[(2 A A A . The physical recipe of 0,1,2, k  (  0 (1) Im(σse)~ 10 (a) Re( ~ )σse Re( ~ )σsm Im(σsm) ~ +1 +1 -1 -1 5 0 −5 −10 96 97 s e i t i v i t t i m d A t e e h S . ff E Fig. 2. 98 99 100 101 102 103 104 Normalized Frequency ωτ π0/ 98 Normalized Frequency ωτ π0/ (a) Lorentzian recipe of Eq. (1) for 0.9A . (b) Metasurface response: Uniform reflection and linear phase. -π - /2π A = 0.9 +π/2 0 9π 8π 7π 6π 5π 4π 3π 2π π 0 99 100 101 102 103 104 R e fl e c t i o n P h a s e s t n e i c ffi e o C r e w o P 1 0.8 0.6 0.4 0.2 0 (b) R A T 96 97 2 The interleaved resonances guarantee the monotonicity of the reflection phase and the specific frequency spacing, strength, and damping are required for providing uniform reflection and an exactly linear phase [Fig. (corresponding to balanced, 2(b)]. Note that the linear phase relies on characteristic points with Arg( ) anti-phase electric and magnetic contributions) occurring at the midpoints between resonances. Then, the evolution from PEC- to PMC-style reflection happens symmetrically leading to an exactly linear phase profile. r   / 2 IV. PRACTICAL IMPLEMENTATION WITH FEW LORENTZIAN RESONANCES In practical implementations the Lorentzian sums of Eq. (1) will be truncated to a limited number of terms. In Fig. 3 we keep three electric and four magnetic resonances; their positions are marked with circles and crosses, respectively. Due to truncation, the reflection amplitude and group delay deviate slightly from the prescribed [Fig. 3(a) and (b)]. However, an incident pulse with a spectral bandwidth of 4 that is accommodated inside the reflection band (FWHM~6) experiences the prescribed group delay without broadening or distortion [Fig. 3(c)]. Figure 3(d) illustrates that the proposed metasurfaces are characterized by ample angular bandwidth. When act different than the prescribed pre , we get pulse replicas in the temporal impinging with an incidence angle domain [2]. However, their amplitude compared to the main pulse is low even for very large angle deviations. (b) 2 Uin 1 T (a) 2 Uin A2 A R s t n e i c ffi e o C r e w o P 5π 3π π -π e s a h P n o i t c e fl e R -3π 1 2 (c) 2 G r o u p D e l a y τ g 1 / τ 0 0 ) t ( t u o u e s l u P t u p t u O 0 Actual Ideal shifted (d) 90 60 ) g e d ( t c a θ 30 0 95 100 ωτ π0/ 105 95 Fig. 3. Response of metasurface with three electric () and four magnetic () resonances: (a) Scattering coefficients and (b) reflection phase and group delay. The input pulse spectrum, Uin(ω), is included. (c) Output pulse with negligible distortion. (d) Fractional amplitude of pulse replicas when the incidence angle θact deviates from the prescribed θpre. θpre (deg) 100 ωτ π0/ 105 −0.5 0 )/ - 0 τ t τ 0 ( 0.5 0.1 0.2 0.5 0 0 15 30 45 60 75 90 V. CONCLUSION We have demonstrated that multi-resonant metasurfaces with interleaved electric and magnetic resonances can act as ultra-thin, broadband, true time delay components in reflection, highlighting the potential of performing dispersion engineering across subwavelength scales. Regarding physical implementation, one choice for the meta-atoms is the cut-wire pair which supports closely spaced electric and magnetic resonances [4]. Arranging multiple cut-wire pairs inside the unit cell in an appropriate topology can offer a route to physically implementing the proposed concept. Work at FORTH was supported by the European Research Council under ERC Advanced Grant no. 320081 (PHOTOMETA) and the European Union's Horizon 2020 Future Emerging Technologies call (FETOPEN-RIA) under grant agreement no. 736876 (VISORSURF). Work at Ames Laboratory was supported by the Department of Energy (Division of Materials Sciences and Engineering) under contract no. DE-AC02-07CH11358. ACKNOWLEDGEMENT REFERENCES [1] C. Pfeiffer, A. Grbic, "Metamaterial Huygens' surfaces: Tailoring wave fronts with reflectionless sheets," Phys. Rev. Lett., vol. 110, p. 197401, 2013. [2] O. Tsilipakos, T. Koschny, and C. M. Soukoulis, "Antimatched electromagnetic metasurfaces for broadband arbitrary phase manipulation in reflection," ACS Photonics, vol. 5, pp. 1101−1107, 2018. [3] V. Ginis, P. Tassin, T. Koschny, and C. M. Soukoulis, "Broadband metasurfaces enabling arbitrarily large delay- bandwidth products," Appl. Phys. Lett., vol. 108, p. 031601, 2016. [4] J. Zhou, E. N. Economou, T. Koschny and C. M. Soukoulis, "Unifying approach to left-handed material design," Opt. Lett., vol. 31, pp. 3620−3622, 2006. 3
1803.03366	2	1803	2019-05-06T16:47:44	Morphological modification of the technical flax fibre bundles to improve the longitudinal tensile properties of flax fibre reinforced epoxy composites	[ "physics.app-ph" ]	As far as the tensile properties of natural fibres as reinforcements for composites are concerned, flax fibres will stay at the top-end. However, an efficient conversion of fibre properties into their corresponding composite properties has been a challenge, due to the fibre damages done through the conventional textile methods utilised to process flax. These techniques impart disadvantageous features onto fibres at both micro, and mesolevel, which degrade the mechanical performances of flax fibre reinforced composites, FFRC. Undulation of fibre is one of those detrimental features that occur during traditional fibre extraction and fabric manufacturing routes. The undulation or waviness causes micro compressive defects or kink bands in elementary flax fibres, which significantly undermines the performance of FFRC. Manufacturing flax fabric with minimal undulation could diminish the micro compressive defects up to a substantial extent. In this research, nonwoven flax tapes of highly aligned flax fibres, blended with a small proportion of PLA, Polylactic Acid have been manufactured deploying a novel technique. Composites reinforced from those nonwoven tapes have been compared with composites reinforced with woven Hopsack fabrics and warp knitted unidirectional,UD fabrics from flax that are comprised of undulating fibres. The composites reinforced with the highly aligned tape have shown 49 percent higher fibre bundle strength, and 100 percent higher fibre bundle stiffness in comparison with that of the Hopsack fabric reinforced composites. The results have been discussed in the light of fibre undulation, elementary fibre individualisation, homogeneity of fibre distribution, extent of resin rich areas, and impregnation of the fibre lumens.	physics.app-ph	physics	Fibre architecture modification to improve the tensile properties of flax- reinforced composites Rishad Rayyaana, William Richard Kennona, Prasad Potluria, Mahmudul Akondaa a School of Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL Abstract textile methods utilised techniques to process flax. These As far as the tensile properties of natural fibres as reinforcements for composites are concerned, flax fibres will stay at the top-end. However, an efficient conversion of fibre properties into their corresponding composite properties has been a challenge, due to the fibre damages done through the conventional impart disadvantageous features onto fibres at both micro-, and meso-level, which degrade the mechanical performances of flax fibre reinforced composites (FFRC). Undulation of fibre is one of those detrimental features that occur during traditional fibre extraction and fabric manufacturing routes. The undulation or waviness causes micro-compressive defects or 'kink bands' in elementary flax fibres, which significantly undermines the performance of FFRC. Manufacturing flax fabric with minimal undulation could diminish the micro-compressive defects up to a substantial extent. In this research, nonwoven flax tapes of highly aligned flax fibres, blended with a small proportion of PLA (Polylactic Acid) have been manufactured deploying a novel technique. Composites reinforced from those nonwoven tapes have been compared with composites reinforced with woven Hopsack fabrics and warp knitted unidirectional (UD) fabrics from flax that are comprised of undulating fibres. The composites reinforced with the highly aligned tape have shown 49% higher fibre bundle strength, and 100% higher fibre bundle stiffness in comparison with that of the Hopsack fabric reinforced composites. The results have been discussed in the light of fibre undulation, elementary fibre individualisation, homogeneity of fibre distribution, extent of resin rich areas, and impregnation of the fibre lumens. Keywords Waviness, Flax fibre composites, Longitudinal tensile strength, Elementary fibre individualisation, Lumen impregnation, Knee-point in the stress-strain curve 1 Introduction Among the natural fibres that are currently being used as composites' reinforcements, flax falls into the top-end of the list, in terms of tensile strength and modulus 1. However, composites reinforced with mineral fibres such as glass or carbon inevitably endow longitudinal tensile and compressive properties beyond the capability of composites reinforced with natural fibres, such as flax. In an effort to reduce this gap, several researchers have succeeded in improving the mechanical performance of flax fibre reinforced composites (FFRC) by modifying the flax fibre morphology through chemical treatment on fibres 2-6. Chemical treatments, however, involve additional manufacturing steps, which increase manufacturing costs. Modification of fibre geometry can be an effective substitute method to improve the mechanical performance of flax fibres inside composites. The geometry of the fibres in composites such as fibre undulation directly influences the mechanical performance of the composites 7-19. Currently, plain woven flax fabrics with undulating fibres are widely being used as composite reinforcements1, 20. The research discussed in this paper is focused on how to reduce fibre waviness for improvement of mechanical performances of FFRC. In pursuit to that, nonwoven flax tapes blended with a small proportion of PLA have been manufactured as reinforcements, using a custom-designed roller- drafting machine. There will also be discussion as to why reduction of waviness plays a vital role in performance enhancement of FFRC. A strand of flax sliver is an assembly of technical fibres and a technical fibre in turn comprises from single number up to tens of elementary fibres21. Lengthwise technical fibres can be as long as the flax stem, and are bonded together with hemicellulose and pectin 21. Inside technical fibres, these elementary fibres tend to overlap each other by a substantial length 21, 22. The cross- section of an elementary fibre can have a pentagonal to octagonal shape, depending upon the cell-growth within the plant. An elementary fibre consists of an outer primary cell wall, an inner secondary cell wall (S2), and a hollow channel called the 'lumen', which runs through the core of the fibre. The secondary cell wall comprises micro-fibrils and accounts for the major portion of the elementary fibre's cross-section. The cellulosic micro-fibrils are crystalline and are spirally wound in a polysaccharide matrix of amorphous hemicellulose and lignin. The helical angle of the fibrils with respect to the fibre axis is +10 23-25. The arrangement of the micro- fibrils resembles a unidirectional composite structure, which confers a good tensile property of the fibres 24, 26-28. Page et al. in 1977, showed that the elastic modulus of natural fibres decreases with the increase of the micro-fibrillar helix angle 29. Hence, a low helix angle confers good strain to failure properties whilst minimising the compromise of tensile strength and longitudinal compressive strength. When a flax fibre is bent by any mechanical mean, the cellulosic fibrils of the S2 wall become dislocated, and at the same point the hemicellulose that binds the micro-fibrils together fails. The lateral compressive force caused by bending does not result in failure of the micro-fibrils, rather they become slightly separated, and form cracks bridged by coarse fibrils. This structure looks like a crack and is termed a slip plane, or a node, or a kink band, as shown in Figure 8. Kink bands are micro-compressive defects of flax fibres 22, 27, 30, 31. Bos (1999) showed that the gradual compressive force on the elementary fibre increases the number of kink bands 24. Kink bands reduce the dry fibre's tensile strength as those defective areas potentially initiate failure under tensile loading. Inside the composites as well, the kinked areas are susceptible to damage initiation under tensile loading. For the case of dry flax fibres, if the fibre undergoes cyclic tensile loading, a reorientation in the micro-fibrils takes place (which are aligned at +10 to the fibre axis), and this results in strain-hardening by straightening out the kink bands. Eventually the non-linearity of the tensile curve of the dry fibres disappears and the modulus increases 25. This 'strain hardening' does not occur within flax reinforced composites as the fibres are locked in the matrix. Therefore, upon tensile loading, stress-concentration develops around the kinked areas, which in turn initiates fibre-matrix de-bonding as well as micro-cracks within the matrix 25, 32-34. Traditional textile processing for flax fibres such as breaking, scutching, hackling, drawing, spinning, and weaving involve a lot of fibre bending and fibre undulation, eventually resulting in developing kink bands. Also, fibre reinforcements inside a composite can withstand maximum load if aligned exactly with the loading direction. Therefore, a nonwoven flax tape with fibres parallel to each other is clearly a possible solution to nullify the effect of waviness up to a great extent. A number of researchers in recent times have conducted experiments on nonwoven tape 33, 35-39. UD fabric with twistless yarn is another method to optimise fibres alignment, which has been investigated by Miao and Shan (2011) 38. In this research, a highly aligned nonwoven tape, comingled with a small proportion of PLA has been manufactured with no noticeable out-of-plane waviness. A novel technique has been exploited here, and the compatibility of the newly made tape has been studied in comparison with plain woven fabric (Hopsack) and warp knitted unidirectional fabric (UD). 2 Materials and manufacturing 2.1 Fabrics Four types of fabric have been used in this research namely Hopsack (plain woven Hopsack fabric), UD (warp knitted UD fabric made from twistless wrap-spun yarn, as shown in Figure 3), T180 (nonwoven tape of 180 mm width), and GVT (nonwoven tape attached with a glass fibre veil). Hopsack and UD were procured from a local company named 'Composite Evolution'. The other two structures were manufactured as a part of this research, using a novel technique. Table 1 shows the dry fabric specifications. Figure 1 shows the topology of the fabric surfaces whereas Figure 2 shows the cross-sections of all four kinds of fabric. The undulation angle shown by the warp yarns in the Hopsack dry fabric is 171 and inside the composite, the undulation angle was found to be 141. Dry UD fabric shows an undulation angle averaging 6.1 whereas no discernible undulation can be found in the UD composites. The tapes also showed no noticeable undulation of the fibres, either in dry or in composite state. Table 1 Dry fabric specification Hopsack UD T180 GVT Yarn Linear density, in tex 250 250 Flax content, % Glass content, % 88 n/a 84.53 n/a Polyester content, % 12 15.47 PLA content, % n/a n/a n/a 90 n/a n/a 10 n/a 89.5 10.5 n/a n/a Fabric construction 4×4 Hopsack Warp knitted Nonwoven tape Nonwoven tape with surface veil Areal density, in g/cm2 0.0519 0.0264 0.0158 0.049 Fabric density, g/cc 1.4845 1.4802 1.467 1.564 Ends/inch Pics/inch 24 30 24 6 n/a n/a n/a n/a Figure 1 Optical images of flax fabrics (top view): (a) Nonwoven tape; (b) Warp knitted UD fabric; (c) Hopsack fabric; and (d) Nonwoven tape with surface veil. Figure 2 Cross-sectional images of flax fabrics captured by optical microscope: (a) Hopsack fabric; (b) UD; (c) T180; and (d) GVT. Figure 3 Twistless flax yarn. 2.2 Nonwoven tape manufacture A commingled form of flax fibres with 10% PLA binder fibres (90:10 w/w), was produced using a specially designed draw-frame, attached with a calendaring machine, as depicted in Figure 4. Sequentially, this consisted of, what is termed, a 3-over-3 roller-drafting unit, a heating unit and then a pair of pressurised calendars. To begin the process of conversion, the blends are fed to the roller-drafting unit. The combined action of the paired rollers aligns the flax fibres in the machine direction (which is ultimately the axis of the resulting tape). This action is known as drafting, and each successive pair of rollers operates with a surface speed slightly faster than the proceeding pair, thereby attenuating the fibre mass as it passes from one roller pair to another. During drafting, the frictional contact between fibres induces the localised shear forces required to orientate the flax fibres uni-directionally. Drafting therefore simultaneously, thins and separates the flax/PLA blends into a fine sheet of fibres in addition to effecting fibre alignment. On leaving the drafting stage the thin sheet of fibres is heated just above the melting point of the PLA and additionally, is drafted by the faster surface speed of the calendar rollers, for further alignment of the flax fibres. The calendar rollers simultaneously apply a pressure of 3 bars to the flax sheet, melting the PLA fibres to the flax to produce a semi-consolidated tape. Partially consolidated tapes of 170 mm width, were produced at 170ºC. GVT was produced with glass surface veils on both sides of nonwoven tape and no PLA was blended with flax. To add surface veils, rolls of glass veils were mounted between the drafting and heating zone on both planes. Glass veils that were used contained a small proportion of adhesive materials, subjected to be activated during heating. These adhesive materials provided the required adhesive strength for the glass veils to be attached with the surfaces of the tapes. Figure 4 Schematic diagram of drawing, heating and condensing zones of a nonwoven tape manufacturing using Autodesk©. 2.3 Composite manufacturing and sample preparation Cross-ply laminates were manufactured by the 'Vacuum Assisted Resin Injection Moulding' method using thermoset epoxy resin, LY564 as resin and Aradur 2954 (35% of the resin weight) as hardener from Huntsman. The curing was performed at 80 °C for 2 hours and the post-curing was completed at 120 °C for 6 hours, as shown in Figure 5. Figure 5 Curing cycle for LY564 and Aradur 2954. Specifications of the tensile specimens are given in Table 2 . The specimens were prepared according to ASTM D3039. The fibre volume fraction (FVF) was calculated according to the ISO 14127:2008 40, as described in Equation 1. 𝑚𝑓 ⁄ 𝜌𝑓 … … … … … … … … … … (1) 𝑣𝑓 = 𝑉𝑐 where, mf=mass of the flax fibre, Vc=Volume of composite, and ρf=Density of fibre. 050100150200250300350400450500550600650700020406080100120140X: 60Y: 80Time, in minutesTemperature in degreesX: 180Y: 80X: 240Y: 120X: 600Y: 120X: 700Y: 252 hours6 hours1 hoursTable 2 Cross-ply laminate specifications Weave structure Flax % Gauge Length (mm) No. of layers Width (mm) Thickness (mm) Fibre volume fraction, % Composite Density (g/cc) Hopsack Plain woven Hopsack 88 150 3 247 2.64 39.64 1.26 UD Plain woven unidirectional 84.53 150 T180 Nonwoven tape 90 150 GVT Nonwoven tape with glass veil 89.5 150 6 6 4 252.9 2.89 36.89 1.25 247.6 3.61 38.87 1.25 249.4 3.98 31.41 1.25 3 Results and discussion Tensile tests were carried out according to ASTM D3039, where test coupons were rectangular, using an Instron 5982 machine with a 100 kN load cell. Gripping pressure was 50 bar and data captured rate was 200 milliseconds. The test data is compiled in Table 3. Table 3 Mechanical properties of the cross-ply laminates Failure stress (MPa) Failure strain (%) Max load (kN) 1st strain segment (%) 1st modulus (GPa) 2nd strain segment (%) 2nd modulus (GPa) FVF (%) Hopsack 72.97±1.32 1.32±0.07 4.76±0.1 0-0.5% 7.91±0.26 0.5-1.31 4.21±0.24 39.64 UD 99.31±2.25 1.75±0.08 7.28±0.17 0-0.33% 8.87±0.33 0.33-1.75 4.8±0.13 36.89 T180 108.1±5.07 1.4±0.09 9.66±0.71 0-0.19% 12.5±1.16 0.19-1.4 6.67±0.16 38.87 GVT 89.95±4.65 1.16±0.05 8.95±0.48 0-0.13% 13.2±1.01 0.13-1.16 7.09±0.16 31.42 For comparative analysis of the composites of different fibre volume fractions, an extrapolation method using the rule-of-mixtures has been adopted here, which has been extensively used by previous researchers 28, 33, 36-38, 41. The modulus of fibres inside the composite has been termed as 'fibre bundle stiffness', and the strength of fibres has been termed as 'fibre bundle strength' to expresses the stiffness and strength performances of flax fibres in the impregnated state. Equation 2 and Equation 3 below express the fibre bundle stiffness and fibre bundle strength respectively. 𝐸𝑐 = 𝜂𝜃𝜂𝑙𝑉𝑓𝐸𝑓 + (1 − 𝑉𝑓)𝐸𝑚 … … … … … … … … … … (2) where, 𝐸𝑐 = 𝑚𝑜𝑑𝑢𝑙𝑢𝑠 𝑜𝑓 𝑐𝑜𝑚𝑝𝑜𝑠𝑖𝑡𝑒𝑠, 𝑖𝑛 𝐺𝑃𝑎 𝜂𝜃 = 𝐾𝑟𝑒𝑛𝑐ℎ𝑒𝑙 𝑓𝑖𝑏𝑟𝑒 𝑜𝑟𝑖𝑒𝑛𝑡𝑎𝑡𝑖𝑜𝑛 𝑓𝑎𝑐𝑡𝑜𝑟 𝑤ℎ𝑖𝑐ℎ 𝑖𝑠 1 𝜂𝜃 = ∑ 𝑎𝑛𝑐𝑜𝑠4𝜃𝑛 𝑛=0 𝑎𝑛 = 𝐹𝑟𝑎𝑐𝑡𝑖𝑜𝑛 𝑜𝑓 𝑡ℎ𝑒 𝑓𝑖𝑏𝑟𝑒𝑠 𝑤𝑖𝑡ℎ 𝑡ℎ𝑒 𝑜𝑟𝑖𝑒𝑛𝑡𝑎𝑡𝑖𝑜𝑛 𝑎𝑛𝑔𝑙𝑒 𝜃𝑛 𝜂𝑙 = 𝑓𝑖𝑏𝑟𝑒 𝑙𝑒𝑛𝑔𝑡ℎ 𝑑𝑖𝑠𝑡𝑟𝑖𝑏𝑢𝑡𝑖𝑜𝑛 𝑓𝑎𝑐𝑡𝑜𝑟 𝑉𝑓 = 𝑉𝑜𝑙𝑢𝑚𝑒 𝑓𝑟𝑎𝑐𝑡𝑖𝑜𝑛 𝑜𝑓 𝑓𝑖𝑏𝑟𝑒𝑠 𝐸𝑓 = 𝑚𝑜𝑑𝑢𝑙𝑢𝑠 𝑜𝑓 𝑓𝑖𝑏𝑟𝑒𝑠 𝑖𝑛𝑠𝑖𝑑𝑒 𝑐𝑜𝑚𝑝𝑜𝑠𝑖𝑡𝑒𝑠 𝐸𝑚 = 𝑚𝑜𝑑𝑢𝑙𝑢𝑠 𝑜𝑓 𝑚𝑎𝑡𝑟𝑖𝑥 𝜂𝑙is considered here as 1 because the gauge length of all the specimens was 150 mm and the average length of flax technical fibres is 150 mm to 700 mm 42-44. 𝜂𝜃 for the cross-ply structures (except Hopsack fabric) is 0.5 as exactly 50 percent of the total fibres in composites were laid up at an angle of 0° to the loading direction. For Hopsack, it was 0.4445 because the warp PPI (picks per inch) was 24 and weft PPI was 30. Therefore 44.45% of the total fibres were laid in the warp direction. Similar to the fibre bundle stiffness, fibre bundle strength has also been measured using the rule-of-mixtures that has been used by several researchers previously 28, 37, 45, as shown in Equation 2. The failure strain of the matrix, (4.5%) 46 is much higher than the failure strain of flax fibre (2%) 47. Therefore, in this case, upon tensile loading, the failure of the flax fibres precedes matrix failure. 𝜎𝑐 = (𝜂 × 𝑉𝑓 × 𝜎𝑓) + (𝑉𝑚 × 𝜎𝑚) … … … … … … … … … … (3) where, 𝜎𝑐 = 𝑠𝑡𝑟𝑒𝑛𝑔𝑡ℎ 𝑜𝑓 𝑐𝑜𝑚𝑝𝑜𝑠𝑖𝑡𝑒𝑠, 𝑀𝑃𝑎 𝜂 = 𝑓𝑖𝑏𝑟𝑒 𝑜𝑟𝑖𝑒𝑛𝑡𝑎𝑡𝑖𝑜𝑛 𝑓𝑎𝑐𝑡𝑜𝑟; 𝑓𝑜𝑟 𝑐𝑟𝑜𝑠𝑠 − 𝑝𝑙𝑦 = 0.5 𝑉𝑓 = 𝑣𝑜𝑙𝑢𝑚𝑒 𝑓𝑟𝑎𝑐𝑡𝑖𝑜𝑛 𝑜𝑓 𝑓𝑖𝑏𝑟𝑒 𝜎𝑓 = 𝑠𝑡𝑟𝑒𝑛𝑔𝑡ℎ 𝑜𝑓 𝑓𝑖𝑏𝑟𝑒, 𝑀𝑃𝑎 𝑉𝑚 = 𝑣𝑜𝑙𝑢𝑚𝑒 𝑓𝑟𝑎𝑐𝑡𝑖𝑜𝑛 𝑜𝑓 𝑚𝑎𝑡𝑟𝑖𝑥 𝜎𝑚 = 𝑠𝑡𝑟𝑒𝑛𝑔𝑡ℎ 𝑜𝑓 𝑚𝑎𝑡𝑟𝑖𝑥, 𝑀𝑃𝑎;(𝑤ℎ𝑒𝑟𝑒, 𝜎𝑚 = 𝐸𝑚 × 𝜀𝑐; 𝑤ℎ𝑒𝑟𝑒 𝑖𝑛 𝐸𝑚 = 𝑚𝑎𝑡𝑟𝑖𝑥 𝑚𝑜𝑑𝑢𝑙𝑢𝑠 𝑎𝑛𝑑 𝜀𝑐 𝑖𝑠 𝑐𝑜𝑚𝑝𝑜𝑠𝑖𝑡𝑒 𝑓𝑎𝑖𝑙𝑢𝑟𝑒 𝑠𝑡𝑟𝑎𝑖𝑛) 00.20.40.60.811.21.401020304050607080Hopsack tensile samples; Stress versus StrainStrain (%)Stress (MPa) Mean linematt 0/90 tensile Sample 1matt 0/90 tensile Sample 2matt 0/90 tensile Sample 3matt 0/90 tensile Sample 4matt 0/90 tensile Sample 5Knee of the curvea00.20.40.60.811.21.41.61.82020406080100120UD 0/90 tensile samples; Stress versus StrainStrain (%)Stress (MPa) Mean lineUD 0/90 tensile Sample 1UD 0/90 tensile Sample 2UD 0/90 tensile Sample 3UD 0/90 tensile Sample 4UD 0/90 tensile Sample 5UD 0/90 tensile Sample 6UD 0/90 tensile Sample 7Knee of the curveb Figure 6 Mean stress-strain curve for: (a) Hopsack laminates; (b) UD laminates; (c) T180 laminates; and (d) GVT laminates. Figure 6 shows the stress/strain curves for all the composites. On each plot, a distinct 'knee' point can be found, which indicates that each FFRC exhibited an initial higher modulus up to a certain strain limit, followed by a final degraded modulus. Previous researchers have also shown such stress-strain curves containing knee-points, wherein the tangent of the line below the knee- point was higher than the tangent of the line above the knee-point 33, 34, 41, 48. 00.20.40.60.811.21.41.6020406080100120T180 0/90 tensile samples; Stress versus StrainStrain (%)Stress (MPa) Mean linet180 0/90 tensile Sample 1t180 0/90 tensile Sample 2t180 0/90 tensile Sample 3t180 0/90 tensile Sample 4t180 0/90 tensile Sample 5cKnee of the curve00.20.40.60.811.21.40102030405060708090100GVT 0/90 tensile samples; Stress versus StrainStrain (%)Stress (MPa) Mean lineGVT 0/90 tensile Sample 1GVT 0/90 tensile Sample 2GVT 0/90 tensile Sample 3GVT 0/90 tensile Sample 4GVT 0/90 tensile Sample 5dKnee of the curveThe interpretation of the results, therefore, will focus primarily on the explanation of the onset of 'knee' in the stress-strain curves, followed by a comparative analysis of failure strain, failure strength, and initial modulus. Furthermore, the discussion will encapsulate the impact of fibre undulation on fibre morphology and how that undulation influences the corresponding composite's performances upon longitudinal tensile loading. The factors observed in this research that influence the composite's performances are: fibre undulation, individualisation of elementary fibres, homogeneity of fibre distribution, fibre pull-out, and impregnation of the lumens. 3.1 Onset of a 'knee' in the stress-strain curve Though the occurrence of the disruption of the stress-strain curve of FFRC upon longitudinal tensile loading is reported in previous research works, no specific explanation about the reason for this phenomenon can be found in previous research works 33, 41. Nevertheless, it is understandable that the incidence of this knee point is a factor dominated by the fibre morphology. In this research, some plausible reasons have been postulated based on the experimental observations. For the convenience of the discussion, the modulus of the line below the knee point of the stress-strain curve will be termed as 'modulus 1', and the modulus of the line above the knee-point of the stress-strain curve will be termed as 'modulus 2'. The values for moduli 2 have always been found to be lower than that for the moduli 1 for all the FFRC examined in this research. Figure 7 Fibres inside composite: (a) Elementary fibres are bonded with hemicellulose and pectin; and (b) Elementary fibres loose; without any natural matrix It has been discussed earlier that a flax fibre functions as a 'technical fibre' -- a bundle of elementary fibres, wherein, the elementary fibres are bonded together with naturally occurring hemicellulose and pectin matrices21, 34, 37. Technical fibres in fact resemble the structure and behaviour of a typical composite material. Hemicellulose and pectin work as matrix materials in this situation, and like other composite materials, the matrix of a technical fibre transfers stress upon tensile loading among the elementary fibres. When a FFRC is subjected to longitudinal tensile loading, the elementary fibres start to delaminate from pectin and hemicellulose, and at one point, the elementary fibres become completely separated and act like a dry fibre bundle (Figure 12). This is because, the reaction of a dry fibre in response to tensile loading is significantly different from that of an impregnated fibre. In a dry fibre bundle, inter-fibre friction and the strength of the weakest fibre dominate the failure41. But in a composite structure, the average strength of fibres is important as the matrix transfers stress from one stressed fibre to the adjacent fibres, or towards another part of a failed fibre. Stress transfer cannot occur for dry fibres, which implies that whenever the weakest fibre fails, a sudden drop in strength occurs, leading to a sudden failure. Figure 7 (a) shows elementary fibres bundled together, and Figure 7 (b) shows individualised elementary fibres without being cemented by hemicellulose and pectin. This failure of the matrix inside a technical fibre impedes the stress transfer amongst elementary fibres which probably reduces the modulus of a FFRC (modulus 2; above the knee-point) upon longitudinal tensile loading. Figure 8 SEM image showing kink bands on elementary fibre surface. Secondly, the kink bands of the flax fibres play a vital role in generating the reduced value of modulus 2 in comparison with the value of modulus 1. Figure 8 shows an elementary fibre with kink bands, taken from the damaged surface of a Hopsack laminate after tensile loading. The places, where kink bands exist act as stress accumulators. This stress concentration around the kink bands initiates crack propagation, which can lead to the commencement of modulus 2 (the reduction of the gradient in the line above the knee of the stress-strain curve of FFRC) upon longitudinal tensile loading. Furthermore, at the same time, kink bands are also susceptible for fibre failure within the technical fibre bundles upon tensile loading 27, 31. Occurrence of a knee point during tensile loading for dry flax fibre bundles has also been observed by several researchers 25, 31. A notable point is that, for a dry flax fibre bundle subjected to tensile loading, strain hardening (straightening out of the kinked regions by reorientation of the micro-fibrils towards the fibre axis) occurs; this in turn increases the gradient of the line above the knee-point, unlike the stress-strain curves of FFRC. Inside a composite, the kink bands are kept locked by the matrix, which is not the case for the dry fibres without impregnation. Therefore, the occurrence of strain hardening for flax fibre inside a composite is much less likely, as the process is hindered by the matrices. Figure 9 Detachment of the outer cell wall from the inner cell wall of a flax fibre. Thirdly, the outer cell wall of an elementary flax fibre acts as a 'segmented sleeve' that shows a certain degree of relative lengthwise movement25. During a gradual increment of load, the cell walls may slip over each other, which in turn may cause complete failure of the outer cell wall, leaving the inner part empty. At that point, the elementary fibre with the completely severed outer cell wall cannot bear as much load as it could with an intact structure. Kersani et al. (2014) have mooted this reason in their work for the modulus 2 of the stress-strain curve of FFRC upon longitudinal tensile loading, but they presented no supporting evidence. In this research, the failure of the outer cell wall has been supported by SEM micrographs, as shown in Figure 9. It may be seen from Figure 9 that the outer cell wall has been detached from the inner cell wall, which leaves the inner cell wall exposed, without any contact with the matrix of the composite. Thus, upon longitudinal tensile loading, the failure of the outer cell wall can result in a lower tangent value of the line above the knee point of the stress-strain curve of a FFRC. 3.2 Strain of different structures at which the knee point commences From Table 3, it may be observed that the woven structures, namely the Hopsack (modulus 1 region: 0 to 0.5% strain) and the UD fabrics (modulus 1 region: 0 to 0.33% strain) demonstrate a higher range of strain percentages for the modulus 1 region than that of the nonwoven structures (T180: 0 to 0.19% strain for modulus 1, and GVT: 0 to 0.13% strain for modulus 1). The Hopsack fabric consists of undulating warp yarn along its length. Therefore, upon tensile loading up to a certain strain percentage, the structure straightens up its crimped warp yarns. At the same time, delamination between elementary fibres and natural occurring matrices (pectin and hemicellulose that bundle the elementary fibres into technical fibres) begins. The constituent undulations of the Hopsack structure result in a higher strain percentage for the onset of the knee point than that in the UD, T180, and GVT. It should be noted that Hopsack warp yarn exhibits 17.7° crimp in dry fabric, whereas the unidirectional yarns of the UD fabric exhibit only 6.1 ° crimp in dry fabric. The reason for the nonwoven composites exhibiting a lower strain percentage at the onset of the knee point, in comparison with the woven structures, is the fibre undulation. Neither in the dry state nor in the composites, have the fibres of the nonwoven structure showed any discernible undulation. Therefore, upon tensile loading of the composites, the laminates do not show any extra extension before the fibres start to experience stretching. T180 laminates show slightly higher tensile strain values in comparison with GVT laminates. This happens because the GVT fabric contains a glass interleaf (with randomly oriented short glass fibres).In a four-layer GVT laminate, the glass-interleaf adds up to a significant proportion of the total laminate volume; 11.5% of the total weight of a sample, on average. This randomly orientated portion causes an early failure of the GVT structure and also an early onset of the knee-point (hence, an initiation of modulus2) in the stress-strain curve upon tensile loading, compared to that in the T180 structures. 3.3 Analysis of the failure strain Table 3 shows the failure strain values of all the cross-ply laminates. Between the two woven fabric laminates, UD shows a 32% higher extension than Hopsack. This occurs because of the intrinsic crimp of the Hopsack structures. A reinforcement yarn without any out-of-plane undulation can bear tensile loading more efficiently than the yarns with undulation 49, 50. During tensile loading, the undulated warp yarns of the Hopsack fabric first tend to stretch themselves out towards the loading direction. As the extent of the crimp is much higher in the Hopsack structures, before the warp yarns become fully straightened, the matrix cracking is initiated. Thus, it is the yarn waviness that reduces the load bearing efficiency of the Hopsack laminates. It can be seen from Table 3 that the UD laminates show failure strain (failure strain averaging 1.74%) as 32% higher than that of the Hopsack laminates (failure strain averaging 1.32%). In addition, it has been discussed earlier that the manufacture of Hopsack fabric involves more undulation of the constituent yarns than for component yarns of the UD fabric, hence generating more kink bands in the constituent fibres of the Hopsack fabric. As kink bands work as stress accumulators 26, 31, failure takes place earlier in the Hopsack structures than in the UD structures. Between the two nonwoven structures, T180 (failure strain averaging 1.4%) has shown to resist 21% more strain than that of the GVT (failure strain averaging 1.16%) before failure, because of the absence of glass veils (containing randomly oriented glass fibres) in the former structure. Fibre pull-out is another phenomenon that can be attributed to the differing failure strains of different structures. Fibre pull-outs occur when a discontinuous fibre is embedded in a relatively tougher matrix. Flax fibres contain kink bands along their length which implies that whilst embedded in matrix, a flax elementary fibre in effect exists as 'segments' of 'short fibres', 'joined together' 31. Thus, a kink band acts as a weak link in an elementary fibre and effectively mitigates the continuity of an elementary flax fibre. These weak links may not exist in the same plane as a composite fracture. When a fibre breaks, it introduces stress concentration into the matrix. This stress concentration may be relieved as matrix yielding also takes place. Therefore, along the embedded length of an elementary fibre, matrix cracking may not occur even though there are fibre breakages at the kink bands. In such a scenario, the broken fibre may be pulled out of the matrix rather than failing again at the plane of the composite fracture 49. Figure 10 Fibre pull-outs; T180 specimen damaged from tensile test. Figure 10 shows a typical example of an occurrence of fibre pull-out, wherein the pulled-out fibres have left the holes in the matrix at the plane of the composite failure. The specimen shown in the photomicrograph is a T180 specimen damaged during tensile failure. Figure 10 also illustrates an example, where fibre pull-out from matrix and fibre-breakage at the composite's fracture-plane have occurred simultaneously. If in a composite structure, fibre pull-outs occur at a greater extent, then the failure strain percentage of the composite will be higher 34. From Table 3, it can be found that the failure strain of the UD laminate (1.75%) is 25% higher than that of the T180 structure (1.4%). Neither the UD nor the T180 show any apparent waviness in their composite structures. Therefore, the difference in the failure strain percentage of these two structures can be directly linked with the fibre pull-out phenomenon. Comparing the T180 and the UD specimens, fibre individualisation has been found to be higher for the former. However, as the UD composites are composed of yarns, rather than the individualised elementary fibres (as found in the T180 structures), the strand of fibres in the former structure act as monolithic units. Generally, for two composite structures with different proportions of individualised fibres, fibre pull-out will occur to a greater extent in the structure with a higher proportion of individualised fibres. This is evident from a comparison of Figure 13 (a) and Figure 13 (b), wherein, the occurrences of fibre pull-out in the former are higher than in the latter. However, in this case, the structural differences between the UD and the T180 specimens are important. As the UD material is manufactured from yarn, the length of a yarn pulled-out from within the matrix surface (in UD structures) is greater than the average length of the elementary fibres in the T180 structures. Therefore, though the occurrence of fibre pull-out is higher in T180 (due to the greater number of individual elementary fibres in T180 specimens, in comparison with UD), the effect of fibre pull-out (which influences the failure strain) is higher in the UD structures. This usefully explains why the failure strain for UD composites is 25% higher than that of T180 structures. 3.4 Analysis of the composite strength Table 4 compiles the tensile strength results at a 95% confidence level, recorded from tensile tests executed on an Instron 5982 machine, and shows the extrapolated data created using Equation 3. It can be observed that the average fibre bundle strength of Hopsack (296.56±8.38 MPa) structures is 29% lower than that of the UD (382.73±6.02 MPa) structures. The main cause that can be attributed to this difference is the differing extent of the undulation of the fibres within the structures. Both the fabrics have been manufactured using same yarn. However, the yarns used in the Hopsack laminates have shown a 14° undulation inside the composites whereas the UD yarns did not demonstrate any waviness. It has been discussed earlier that the undulation increases the number of kink bands in the flax fibre, which in turn lowers the composite's strength. In addition, as a principle of mechanics, an undulating reinforcement is unable to bear load as much as a straight reinforcement can. Table 4 Strength of the laminates Failure stress (Mpa) Failure strain (%) FVF (%) Fibre bundle strength (Mpa) Normalised FVF (%) Failure stress at 40% FVF (Mpa) Hopsack 72.97 1.32 39.64 296.56±8.34 40 73.32±7.29 UD 99.31 1.75 36.89 382.73±6.02 40 103.85±2.25 T180 108.1 1.4 38.87 441.72±15.23 40 110.18±5.06 GVT 89.95 1.16 31.42 440.91±14.61 40 106.28±4.65 The main difference among the UD, T180, and GVT is the geometry of their reinforcement assemblies. UD is warp-knitted fabric made from twistless flax yarns, whereas T180 and GVT are nonwoven tapes, made from technical fibres. During manufacture, the fibres of tapes undergo additional drafting, which minimises the kink bands to some extent by strain hardening 25, 31, 34, 51. Figure 11 shows the images of fibres under polarising filter. It may be observed that the number of kink bands along a certain fibre length is higher in a fibre taken from the T180 tape, shown by Figure 11 (a) than in a fibre taken from the UD fabric, shown in Figure 11 (b). Figure 11 Optical microscopic image with polarisation filer; Kink bands on: (a) T180 fibre; and (b) UD fibre. Secondly, individualisation of the elementary fibres plays a key role in achieving higher strengths for the tape-reinforced composites in comparison with the UD laminates. Fibres in the UD fabric remain as strands of fibres clustered into yarns, whereas tapes are assemblies of loose fibres. During manufacturing, nonwoven tapes undergo an additional step of drawing and drafting to ensure better individualisation and parallelisation of the constituent fibres. During that drafting, a significant proportion of the pectin and hemicellulose bonding of the elementary fibres inside the technical fibres may suffer damage, and a delamination between elementary fibres and the naturally occurring hemicellulose and pectin matrices may take place. A study was conducted as part of this research wherein the average fibre length of the fibres from raw sliver and twistless yarn (drafted sliver) was captured. It was found that the median length of the fibres from the raw sliver was 119.37±4.69 mm, and from the drafted sliver, it was 98.94±4.02 mm. These values indicate that the drafting operation imparts axial force onto the fibre strand which in turn individualises elementary fibres from the technical fibre bundle. In contrary, the fibres of the UD structures remain clustered as yarn inside composites. Due to this additional drafting during tape manufacture and fibre arrangement of the tapes, the presence of individualised elementary fibres in the tape-reinforced composites is higher than that of the UD composites. This increased individualisation of the fibres in the tapes renders a better homogeneity of fibre distribution and a reduced incidence of resin rich areas. Bos et al. (2002)52 mentioned in their research that the technical fibre strength is 57% of the corresponding elementary fibre strength. So it can be inferred that if the fibres in the laminate are arranged in such a way that the technical flax fibres are broken into elementary fibres, the strength will be enhanced. If the elementary fibres remain as individual units instead of being bundled during composite manufacture (i.e. technical fibre), they can be fully encased by the matrix and can demonstrate superior mechanical properties. This happens primarily due to the bundle effect 53, and secondly, individual elementary fibres offer more surface area to the encapsulating matrix, which a technical fibre (i.e. a bundle of elementary fibres) cannot do up to the same extent if those were individualised. A greater surface area ensures better stress transfer between fibre and matrix. Inside a composite, the role of the resin is to transfer the stress from the reinforcement. This is why better interfacial bonding ensures better tensile properties and better stress transfer 49, 50. If dry fibres remain as technical fibre bundles inside a composite, then the internal elementary fibres within a technical fibre during tensile loading may separate and may remain as dry strands of fibres within the composite structure. Figure 12 Gaps between elementary fibres in: (a) UD laminate; and (b) Hopsack laminate. Figure 12 (a) shows a bundle of elementary fibre having empty spaces in between the fibres. Therefore, the separated elementary fibre will not be able to transfer its strength to the matrix. Figure 12 (b) shows empty spaces between two elementary fibres, which leave an elementary fibre partially dry along its length within a composite. On the contrary, Figure 14 (a) shows elementary fibres being surrounded with resin for a GVT laminate. Both Figure 12 (a) and Figure 14 (a) represent cross-sectional images of undamaged flat surfaces of a UD and a GVT composite respectively. If a significant number of technical fibres exist in a composites structure instead of that of individual elementary fibres, there will be significant numbers of fibres without any contact with resin, which will in turn lower the strength. As the presence of individual elementary fibres is higher in the tapes than in the UD fabric, the strength of UD composites is lower than that of the tape-reinforced composites. Figure 13 Top-view of composite sample, ruptured after tensile test: (a) UD; (b) T180; and (c) Hopsack. Thirdly, a greater extent of individualisation of elementary fibres ensures a more homogeneous distribution of the fibres inside the composites. Figure 13 shows a comparative scenario of the fibre homogeneity in flax composites and also the extent of resin rich areas. A homogenous distribution of the fibres across a composite structure results in fewer resin rich areas, which is beneficial for the mechanical performance of the composite. Figure 14 Flat surfaces of undamaged composite specimens: (a) GVT; and (b) UD. Finally, another phenomenon can be attributed to the superior strength properties of the T180 and GVT composites in comparison with the UD, and this is the impregnation of the lumens of the elementary fibres. Figure 14 (a) and Figure 14 (b) show examples of flat surfaces of undamaged composites. From both the figures, it can be seen that the presence of the impregnated lumens are greater in the GVT laminates in comparison with the UD laminates, consequently, the latter exhibits lower fibre bundle strength. If the lumens are infused too, that will add additional stiffness to the composites. This will happen because more of the fibre surface area will be exposed to the resin, which will improve the stress transfer between matrix and fibre. Moreover, during tensile loading, at the point when the pectin/hemicellulose matrices will start to suffer damage inside a technical fibre, the elementary fibres will be separated from each other and will remain as individual dry fibres, resulting in rendering negative influence for the strength of composites. This phenomenon has been demonstrated in Figure 12 (b) by a Hopsack laminate damaged during tensile testing. The impregnated and non-impregnated lumens can also be observed from Figure 15 (a) and Figure 15 (b). Figure 15 Damaged specimens with empty and impregnated lumens; (a) UD; and (b) GVT. It may be observed that the fibre bundle strength values for GVT and T180 are almost equal. In GVT, an extra 2D glass veil has been inserted and this imparts a hybridisation effect on the composites. Attaching the glass veil increases the modulus; however, it does not confer any significant improvement in respect of strength properties. 3.5 Analysis of modulus Table 5 Calculated fibre bundle stiffness of the cross-ply laminates 1st strain segment (%) 1st modulus (GPa) Fibre bundle stiffness (GPa) 2nd strain segment (%) 2nd modulus (GPa) Fibre bundle stiffness (GPa) Fibre Volume Fraction (%) Hopsack 0-0.5% 7.91±0.26 35.98±1.18 0.5-1.31 4.21±0.24 14.99±0.85 39.64 UD 0-0.33% 8.87±0.33 39.19±1.46 0.33-1.75 4.8±0.13 19.27±0.52 36.89 T180 0-0.19% 12.5±1.16 56.14±5.21 0.19-1.4 6.67±0.16 26.14±0.63 38.87 GVT 0-0.13% 13.2±1.01 72.67±5.56 0.13-1.16 7.09±0.16 33.78±0.76 31.42 Figure 16 demonstrates the average stress/strain response for up to 0.2% strain, for all four types of laminates used in this research, wherein the nonwoven tape reinforced composites show greater modulus value in comparison with the composites reinforced with UD or Hopsack fabric. As the fibre volume fractions of the laminates were different, Equation 2 has been applied to derive a normalised comparison. Table 5 contains a compilation of the full set of test results at the 95% confidence level, captured using an Instron 5982 machine. Figure 16 Stress-strain curve at initial stain%. 00.050.10.150.20.250510152025Tensile 0/90; Stress versus StrainStrain (%)Stress (MPa) GVTUDT180MattWoven-fabricreinforcedcompositesTapereinforcedcompositesThe stiffness of flax fibre reported by various researchers lies in the range between 12 and 85 GPa, and in terms of strength, it is between 600 and 2000MPa 25, 44, 54-57. GVT shows here the highest result wherein the initial fibre bundle stiffness calculated by Equation 1 is 72.67GPa, which is the highest among the currently published research papers that discuss unidirectional flax fibre reinforced epoxy composites 28, 33, 36, 38, 41. T180 shows 56.14 GPa which is also higher than the results reported by Bensadoun et al. (2017). Hopsack returns the lowest value of 35.98 GPa which is almost 51% of the highest performance shown by GVT. T180 and UD are respectively the second and third highest. The method of calculating fibre bundle stiffness used in this research has also been followed by previous researchers 28, 33, 41. The main focus during the production of nonwoven tape in this research was to maintain as good fibre alignment as possible. Baets et al. (2014) conducted similar research in which they used aligned flax fibres infused with epoxy resin51. In their research, stiffness of hackled flax reinforced composites were returned as of 62.9 GPa (using Equation 2), composites constructed using roving reached 51.4 GPa51, and those constructed from yarn attained 43.1 GPa. In this current research, the results for GVT were found to be 72.67GPa; for T180, the value was 56.14 GPa, and for UD laminate the stiffness is 39.19 GPa. All the values appear to be higher than the results reported by Baets et al. (2014). Moreover, in this research, cross-ply laminates have been used whereas previous literature describes unidirectional laminates. Therefore, it can be claimed that composites reinforced with nonwoven tapes produced in this research offer superior mechanical properties to existing similar products on the market. The variation of the moduli of different structures reflects changes in one major variable in the construction of the cross-ply laminates: fibre undulation. Out-of-plane undulation of the fabric reinforced composites has a negative impact on their longitudinal tensile and compressive properties 13, 15, 16, 19. Hopsack and UD fabrics contain 17º and 6º fibre undulation whereas nonwoven tapes contain no discernible crimp. In comparison with Hopsack and UD, UD shows 9% higher modulus values which can be attributed to the undulation of the fibres of the Hopsack. In composite, Hopsack shows 14 º undulations whereas UD exhibits no apparent crimp. The fibre bundle stiffness of T180 for modulus 1 region was found to be 56.14 GPa, which indicates a very good translation of fibre stiffness properties into composite stiffness. Neither UD nor T180 show any measurable crimp in their composite structures. However, T180 shows fibre bundle stiffness values 43% higher than that of the UD in the modulus 1 region. The reasons underlying the superior performance of T180 laminates are the reduced incidence of kink bands, improved homogeneity of fibre distribution, more successful individualisation of elementary fibres, and better impregnation of the lumens of the elementary fibres. It is notable that the GVT structures show the highest fibre bundle stiffness values in the modulus 1 region amongst all the structures, 29% higher than that of the T180 laminates. The interleaved glass webs inserted into the GVT fabric structure has provided the additional initial modulus measured in the GVT laminates. The Young's modulus values for the modulus 2 regions, as shown in Table 5, follow the same order as is in the modulus 1 region. For the modulus 2 region also, GVT composites exhibit the highest stiffness values and Hopsack composites demonstrate the lowest stiffness values. UD and T180 are third and second from the top respectively. Amongst recent publications, only Bensadoun et al. (2017) have shown that for unidirectional laminates, the modulus in modulus 2 region is 46.1 GPa, which is higher than the highest modulus found for the modulus 2 region (for GVT: 33.78 GPa) in this research. However, the laminates used in this work are cross-ply, which would be expected to show inferior tensile properties than unidirectionally laid specimens. It has been discussed earlier that due to the intrinsic morphological structure of the flax fibre, the Young's modulus drops after the application of a certain strain percentage. The decrease of modulus in percentages between modulus 1 and modulus 2 regions for each composite structure have been found to be almost similar, and listed as: Hopsack 58.33%, UD 50.8%, T180 53.43%, and GVT 53.52%. It can, therefore, be postulated that the degree of the drop of modulus is not a function of the structural crimp, rather it is a phenomenon related to the fibre's morphology. 4 Conclusion the delamination of A novel approach has been deployed in this research to manufacture flax nonwoven tape with minimal fibre waviness, in order to increase the longitudinal tensile performances of FFRC. Crimp also increases the incidence of kink bands to the elementary flax fibres, which reduces the translation efficiency of the fibre to the composite. To eliminate the fibre undulation, a nonwoven tape namely T180 (blended with 10% PLA) and a glass veiled tape (GVT; formed with a glass interleaf) were manufactured, wherein the fibres remained in a highly aligned position. These tape-reinforced composites (with no discernible waviness) were compared, in terms of longitudinal tensile properties, with plain woven Hopsack fabric (14º fibre waviness, and wave amplitude to wave length ratio 0.14) and warp-knitted UD fabric reinforced composites. Each stress-strain curve upon tensile loading showed a distinct knee point, which is an intrinsic feature of FFRC. Three reasons have been mooted in this research that might have influenced the onset of the 'knee- point' and the decrease in the modulus of the line above the knee-point. First reason was the naturally occurring hemicellulose/pectin matrices upon tensile loading. Hemicellulose and pectin act as matrices to bond elementary fibres in technical fibres. Second reason was the generation of cracks due to the presence of kink bands that initiated damages in the epoxy matrix. Thirdly, the failure of the outer layers of the elementary fibres during tensile loading that caused a decrease in resisting the tensile load. Kersani et al. (2014)48 also speculated that the failures of the outer layers of the elementary fibres under tensile loading was liable for the occurrence of the 'knee-points' in the stress-strain curve of their composites. However, in this research, this phenomenon was supported by SEM micrographs and analysed qualitatively. For the failure strains, UD has shown a 32% higher value in comparison with that of Hopsack. The reduced failure strain value of hopsack can be attributed to the higher crimp percentage of its constituent yarns. Due to this higher crimp in the constituent fibres in Hopsack structures, matrix yielding was initiated in the Hopsack structures at a lower strain percentage than that in the UD structures, resulting in lower failure strain value for the former. Between the two nonwoven structures namely GVT and T180, presence of the randomly oriented glass veils was liable for the GVT to exhibit a lower failure strain value than that of the T180 structures. Between T180and UD structures, the effect of fibre pull-out was liable for the UD to have a higher failure strain value. T180 contained more individualised elementary fibres, hence experienced higher the elementary fibres from fibre pull-outs, whereas UD is comprised of yarns with bundled fibres. Thus a yarn pulled-out from within the matrix of a UD structure was greater in length than the average length of the elementary fibres that were pulled out in a T180 structure. Pulling-out of these yarns resulted in UD structures having a higher failure strain percentage in comparison with that of the T180 structures upon tensile loading. In terms of composites' tensile moduli (fibre bundle stiffness calculated using the rule-of- mixtures) for the lines below the knee points in the stress-strain curves, the sequence in ascending order was: HopsackUDT180GVT. Out-of-plane undulation of the fibres was attributed as the main liable factor for the difference in modulus values. To analyse the results, micro-scale geometry was thoroughly studied in this research. Tapes contained more individualised elementary fibres; this ensured a better homogeneity of fibre distribution, consequently a reduced incidence of resin rich areas. The higher degree of individualised elementary fibres also ensured improved lumen impregnation. Also a greater number of elementary fibres being surrounded by matrix ensured a better stress transfer during tensile loading of the composites. Moreover, tapes contained reduced numbers of kink bands. During the drawing of the slivers, the fibres that were used to manufacture tape experienced strain hardening, which also improved the tensile properties of the fibres in comparison with the fibres in the Hopsack and UD structures. GVT showed enhanced stiffness properties compared with T180 due to the hybridisation effect induced by the glass veils. The sequence for the composites' moduli for the lines above the knee-points of the stress-strain curves was found to be the same as the moduli below the knee-points. Also the differences in percentage of the moduli values between the lines above and below the knee-points were found to be similar for all the structures. This inferred that the drop of a modulus upon tensile loading for FFRC above the knee-point was not a function of the fibre undulation, rather related to the fibre's morphology. The strength values of the composites also followed the same sequence as that of the moduli values. Between UD and Hopsack, the latter showed reduced strength due to having more fibre waviness and kink-bands. In between UD and T180, the latter showed higher strength values. The reasons for superior strength values of T180 were attributed to the lesser out-of-plain waviness, higher extent of fibre individualisation, more homogeneity in fibre distribution, and greater extent of lumen impregnation. Both GVT and T180 exhibited approximately equal strength values. It was due to the fact that the hybridisation effect of GVT (inclusion of glass- fibre veil should have aided to attain a higher strength value) was mitigated by the random orientation of the glass-fibres (random orientation of fibres is a detrimental factor for tensile strength) in the surface veils of GVT. As a further study, strain hardening of flax fibres during drawing should be thoroughly examined. Also, a detailed quantitative study to analyse the mutually dependant relationships among the elementary fibre individualisation, lumen impregnation, and their effects on the longitudinal tensile properties of the corresponding composites will be an important step to a better understanding of the load-bearing performances of FFRC. Acknowledgement The main author would like to acknowledge the kind support ICT Ministry of Bangladesh for funding this research, National Composites Certification and Evaluation Facility for granting the access to their research facilities, and the School of Materials of The University of Manchester to provide the necessary support to accomplish this research. Funding statement The PhD research was kindly funded by the Bangabandhu Fellowship project under the Ministry of Science and Information Technology of The People's Republic of Bangladesh. References John MJ and Anandjiwala RD. Recent developments in chemical modification and Whitney JM. 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1901.02699	1	1901	2019-01-09T12:41:46	Exploitation of Transparent Conductive Oxides in the Implementation of a Window-Integrated Wireless Sensor Node	[ "physics.app-ph" ]	Exploitation of transparent conductive oxides (TCO) to implement an energy-autonomous sensor node for a wireless sensor network (WSN) is studied and a practical solution presented. In the practical implementations, flexible and rigid substrates that is polyimide and glass, are coated with TCO, namely aluminum doped zinc oxide (AZO). AZO-coated flexible substrates are used to form thermoelectric generators (TEG) that produce electricity for the sensor electronics of the node from thermal gradients on a window. As the second solution to utilize AZO, its conductive properties are exploited to implement transparent antennas for the sensor node. Antennas for a UHF RFID transponder and the Bluetooth radio of the node are implemented. A prototype of a flexible transparent TEG, with the area of 67 cm2 when folded, was measured to produce power of 1.6 uW with a temperature difference of 43 K. A radiation efficiency of -9.1 dB was measured for the transparent RFID antenna prototype with the center frequency of 900 MHz. Radiation efficiencies between -3.8 dB and -0.4 dB, depending on the substrate, were obtained for the 2.45 GHz Bluetooth antenna.	physics.app-ph	physics	Exploitation of Transparent Conductive Oxides in the Implementation of a Window-Integrated Wireless Sensor Node Kaarle Jaakkola and Kirsi Tappura Abstract -- Exploitation of transparent conductive oxides (TCO) to implement an energy-autonomous sensor node for a wireless sensor network (WSN) is studied and a practical solution presented. In the practical implementations, flexible and rigid substrates that is polyimide and glass, are coated with TCO, namely aluminum doped zinc oxide (AZO). AZO-coated flexible substrates are used to form thermoelectric generators (TEG) that produce electricity for the sensor electronics of the node from thermal gradients on a window. As the second solution to utilize AZO, its conductive properties are exploited to implement transparent antennas for the sensor node. Antennas for a UHF RFID transponder and the Bluetooth radio of the node are implemented. A prototype of a flexible transparent TEG, with the area of 67 cm2 when folded, was measured to produce power of 1.6 µW with a temperature difference of 43 K. A radiation efficiency of -9.1 dB was measured for the transparent RFID antenna prototype with the center frequency of 900 MHz. Radiation efficiencies between -3.8 dB and -0.4 dB, depending on the substrate, were obtained for the 2.45 GHz Bluetooth antenna. Index Terms -- Aluminum doped zinc oxide (AZO), Bluetooth, energy harvesting, internet of things (IoT), thermal gradient, thermoelectric generator (TEG), thin-film, transparent antennas, transparent conductive oxide (TCO), UHF RFID, wireless sensor network (WSN) I. INTRODUCTION I MPLEMENTATION of internet of things (IoT) sets requirements as well as gives possibilities for new concepts of wireless sensing. Small and low-cost electronics components, such as energy harvesting circuits and systems-on-chip (SoC) combining microcontrollers with integrated radio transceivers, are increasingly available, which helps to implement various types of sensor nodes to form wireless sensor networks (WSN) [1]. However, one of the greatest challenges in the way of implementing wireless sensor nodes to new environments is still the power generation; most of the current small sensor nodes are operated with a battery. An ideal maintenance-free sensor node, instead, would work without the need of battery change. Therefore, different concepts of energy harvesting have been studied in order to develop an energy autonomous wireless sensor node [2]. In the following, a solution that generates its electricity from temperature gradients on a window is presented. The concept is based on utilizing flexible foils on which a thin layer of transparent conductive oxide (TCO) is implemented as thermoelectric generators (TEGs). Powering WSN nodes by TEGs has been studied formerly [3], [4], but the novelty of the proposed solution lies in utilizing light, flexible and transparent foils that have also other uses in the sensor concept. In this study, additionally to using the transparent foils as TEGs, their conductive properties are exploited by implementing antennas on them, resulting as transparent antennas to be integrated on a window. Different types of surfaces can be coated with TCO. Therefore, additionally to flexible foils, glass is also studied here as the substrate of a transparent antenna. Implementing antennas on a window instead of the printed circuit board (PCB) reduces the size of the electronics of the sensor node and using TCO makes them genuinely transparent, in contrast to e.g. wire mesh solutions that provide an option to implement partly transparent antennas [5]. The third way of using the foils coated with TCO in the WSN concept is using their thermoelectric properties for touch sensing. This paper, however, concentrates on the two parts first mentioned: the thermoelectric generators and the transparent antennas. The touch sensor utilizing thermoelectric elements on TCO is based on the same phenomenon as their use as TEGs and is presented in detail in [6]. Adaptation of the electronics components of the devices implemented on TCO is also addressed. Connecting the TEG elements processed on TCO with each other and to the electronics requires wiring with better electrical conductivity than what can be achieved with TCO materials. This wiring is implemented by screen-printing with silver nanoparticle ink. The practical low-energy sensor electronics is used here as a part of the system and as a reference for power consumption. However, the optimization of the power consumption of the electronics part is not in the scope of this paper. implementation of the node to operate with Manuscript submitted Jan 21, 2018, revised May 11, 2018. This work has been part of the TransFlexTeg project, which has received funding from the European Union's Horizon 2020 research and innovation program 2014-2018 under grant agreement No 645241. The partial funding from VTT Technical Research Centre of Finland Ltd is also gratefully acknowledged. The authors are with the VTT Technical Research Centre of Finland Ltd., FI-02044 Espoo, Finland (e-mail: [email protected]). II. MATERIALS AND METHODS A. Topology of the sensor node is The overall sensor concept can be divided into two main parts: the components implemented on TCO and the electronics module. The block diagram of the system is shown in Fig. 1. On the left hand side, surrounded by a solid line, are the components integrated on TCO: the thermoelectric generators or TEGs, the two antennas that is the RFID tag and the Bluetooth antenna, and the thermoelectric sensors. On the right hand side, surrounded by a dashed line, are the components of the electronics module. The concept comprises two types of transparent antennas: 2.45 GHz Bluetooth antenna for data transfer from the sensor node to an external gateway device and an RFID transponder antenna operating between 865 and 928 MHz for global operation according to ISO 18 000 - 6C (EPC Gen2) standard. The passive RFID tag integrated into the window provides the window and the sensor node with an individual identification code, but optionally also an alternative way of exciting the sensors when the thermoelectric generators or from the energy storage. The backscatter modulation of the RFID protocol also provides an energy efficient option for wireless communication [7]. is no power available from there The heart of the electronics module the Nordic Semiconductors nRF51422 system-on-chip with an integrated microcontroller and a Bluetooth radio transceiver unit [8]. As the power production of the TEGs, especially when installed on a window, varies over time, an energy harvesting circuit with a storage capacitor is assembled between the TEGs and the power consuming electronics. As the selected energy harvesting circuit, Analog Devices ADP5090, has a unipolar input and the polarity of TEGs assembled on a window can change depending on the time of the year and even within a day, there is a diode bridge consisting of four SD103 Schottky diodes to provide the energy harvesting circuit with a fixed polarity. In order to exploit the energy of the storage capacitor as efficiently as possible and to protect the components from overvoltage, a chopper regulator is assembled between the energy harvesting circuit and the power consuming electronics. the voltage produced by Three sensor units are connected to the nRF51422: HYT271 that measures the ambient temperature and relative humidity, GSS Cozir CO2 sensor unit and the thermoelectric touch sensors integrated on TCO. As the thermoelectric touch sensors is very low, only a few hundred microvolts, an instrumentation amplifier is needed between the sensors and the input channels of the nRF51422. As the touch sensor is a multichannel array, this amplifier unit also comprises a time-domain multiplexer (Mux). nRF51422 transmits the sensor data to the gateway device using Bluetooth 4.0 LE protocol. The gateway device connected to the Internet sends the measurement data further as http messages into a cloud service. The average power consumption of the electronics is controlled by adjusting the duty cycle of the power hungry operations that is transmission and measurements. The idle power consumption of the CPU is 2 µW and the highest peak 2 consumption during the 20 ms transmit burst is 60 mW. As an example of a use scenario, if temperature and humidity are measured and the data is transmitted every 15 minutes, the average power consumption of the electronics becomes 3.3 µW. Fig. 1. Topology of the sensor node. B. Transparent conductive oxides The figure of merit, ZT, for a thermoelectric material is defined [9]: (cid:1852)(cid:1846)=(cid:3097)(cid:3020)(cid:3118)(cid:3021)(cid:3089) , (1) where ρ is electrical conductivity, S the Seebeck coefficient, T absolute temperature and ϕ thermal conductivity. In terms of the critical parameters, the two applications of TCO studied in this paper, thermoelectric generators and antennas, have somewhat different requirements. For TEGs, the optimization of the material parameters is about finding the right combination or compromise between ρ, S and ϕ. For antennas, instead, the electrical conductivity ρ is the only critical parameter. Therefore, the TCOs need to be optimized primarily for their use as TEGs. There are some alternatives for the TCO material, such as impurity-doped SnO2, In2O3 and ZnO [10]. Tin doped indium oxide (In2O3:Sn or ITO) is one of the most commonly used TCOs due to its high electrical conductivity and high transparency, while aluminum doped zinc oxide (ZnO:Al or AZO) provides an environmentally friendly alternative that is more abundant and has lower cost. As AZO also has good electrical conductivity (for a TCO), high transparency (80 -- 90% transmittance reasonable thermoelectric properties [6], [12], [13], and very good RF properties considering the antenna solutions also at UHF [14], it is used in this work. Recently, some antennas have been implemented on ITO and AZO at the frequency of 2.45 GHz and above [15], [16]. However, lower frequencies such as 900 MHz studied in this paper are more challenging and require special measures to achieve an adequate radiation efficiency and to implement the electrical connection to the antenna. the visible region [11]), The AZO coating of the prototypes was made by Picosun in using an atomic layer deposition (ALD) process to enable sufficiently low process temperatures required by the flexible substrates [17]. Three materials were used as substrates for the AZO coating: regular polyimide or Kapton NH® film (yellow), Kapton CS film (colorless polyimide) and glass [18]. All the TEG and RFID transponder prototypes were made using Kapton NH film. Bluetooth antenna prototypes were made using Kapton CS film and glass. Regardless of the substrate, the AZO coating is ~ 400 nm thick, producing DC sheet resistance of about 40 to 55 ς /□, slightly varying over the surface. The selected thickness of AZO is a result of a compromise between the thickness limitations of the ALD process and the requirements of the antenna and TEG applications for a sufficiently low sheet resistance. C. Thermoelectric generators. The concept of harvesting energy from thermal gradients of a window was studied by measuring temperatures on the two inner glasses of a triple glazed window located in an office building in Espoo, Finland (60°11'8"N, 24°49'22"E), facing towards South-West. The air gap between these glasses is 12 mm. Fig. 2 a) shows the temperature difference between the glasses under winter conditions in January 2016, whereas Fig. 2 b) demonstrates the temperature differences available in summer (August 2015). The different curves in the figure stand for the different lateral positions of the pt-100 sensors on the glass. During the peak difference of winter, the temperature of the outer glass was -23.2 °C and during the peak of the opposite direction in summer it was +51.3 °C. These two cases of summer and winter also show how the polarity changes due to the change of the direction of the thermal gradient, justifying the need of the diode bridge between the TEGs and the unipolar energy harvester circuit. During summer time, the polarity changes also within a day. The temperature difference between the glasses is 23.8 K at its highest, but it can also be practically zero over rather long periods, based on which the energy storage needs to be sized. Fig. 2. Examples of temperature differences between the window glasses in (a) winter (January 2016) and (b) in summer (August 2015). A thin-film TEG design with a novel folding scheme has been proposed previously for large-area, low energy density applications and the performance analyzed computationally [9]. The proposed design suits well for energy harvesting from the thermal gradients available between window glasses. In the folded TEG module, the heat flux and current flow are parallel to film surface but the temperature gradient perpendicular to the plane of the TE module, as described in [9]. The basic three- 3 dimensional structure of the folded module designed to fit tightly in the 12 mm wide space between the glasses is shown in Fig. 3 (a). However, in order to avoid the possible risks of the folding process [19] and to enable easy control of thermal gradients, the present study concentrates on measuring the generated voltage and power of planar TEG foils but having the conductor and TEG patterns applicable to the folded structure (see Fig, 3 (b)). Fig. 3. (a) The principle of the proposed 3D structure of the folded TEG module. (b) The conductor and TEG patterns, for nine single-conduction-type TEGs connected electrically in series, applicable to the folded structure (yellow = AZO, grey = conductor lines, light blue lines = AZO removed, C = cold, H = hot). h = 12 mm, w = 8.05 mm, d = 5.1 mm, g = 1.4 mm, x = 1 mm. For predicting the performance of the planar TEGs and for extracting the material parameters (see Section IIIA) of the fabricated thin film TEGs, a simulation model mimicking the planar measurement setup of Figs. 4 and 5 was built. The computational model is based on the finite element method (FEM) implemented in COMSOL Multiphysics [20]. In addition, analytical methods are used for calculating the selected characteristic parameters of the TE device. In the FEM model, heat transfer equations are coupled with the electrical phenomena for modelling the thermoelectric effect (Peltier- Seebeck-Thomson) [20]. The FEM model includes the coupled phenomena of heat transfer by conduction in the substrate, thermoelectric materials and conductor lines, electrical conduction and Joule heating in the TE material and conductor lines, and thermoelectric effect in the TE material and conductor lines. Temperature gradients are applied over the TEGs mimicking the temperature gradient of the folded structure by setting a constant heat source or constant temperature on the hot and cold lines as shown in Fig. 3 (b). The TEG foil prototypes were fabricated by screen-printing the conductor pattern of Fig. 3 (b) with Inkron IPC-114 silver ink on the AZO-coated Kapton NH foils. AZO was removed from between the adjacent conductor lines at the same temperature, as shown in Fig. 3 (b), by grinding with fine sand paper. In order to measure the voltage and power generated by the TEG foils, a test rig with aluminum fingers acting as heat conductors was built. Side view of the structure is shown in Fig. 4. In the structure, two aluminum plates (1) are thermally connected to aluminum fingers (2) that are each pressed against the foil under test (3) by a finger of synthetic rubber foam (4) on the opposite side of the foil. Five of the fingers are equipped with pt-100 temperature sensors (5) to measure the temperature difference. The structure is placed on a hot plate and is cooled from above e.g. by using ice. Every second pair of the foil is then at high temperature and the ones between them are at low temperature. In order to measure each thermopair also individually, there are also galvanic contacts formed by strips of copper tape on the upper part of the device. Fig. 5 shows the opened structure with the TEG foil under test between the halves of the device. Fig. 4. Schematic side view of the thermoelectric test rig, showing the aluminum plates (1), aluminum fingers (2), foil under test (3), foam fingers (4) and temperature sensors (5). 4 physical connection interface to the electronics is very different for the two. The very low conductivity of the TCO material sets its limitations to the possible antenna structures; in order to minimize the conductivity losses, electric current should be distributed as evenly as possible on the antenna conductor. In practice, this means simple structures with wide conductors and no meandering [21]. If the electronics require a large enough printed circuit board, it can be used as a ground plane or the other half of an asymmetric dipole antenna. Fig. 6 shows the antenna structures that meet these criteria and therefore can be considered as potential TCO antennas. Type a) is a simple two- branch dipole fed from its middle. Type b) is a dipole antenna with an integrated parallel loop that is typically used in label type RFID transponders [22]. Type c) is a straight dipole fed inductively with an external loop on its side. Type d) uses the printed circuit board shown on the right as one half of the asymmetric dipole, as the second one is implemented on TCO. Implementing a galvanic contact to TCO is challenging and therefore it is preferred to use capacitive coupling with antenna types a), b) and d). The antennas were simulated with Ansys HFSS 15.0 electromagnetic simulation tool [23]. The material parameters used in the simulations are listed in Table I, including relative permittivity δr, dielectric loss tangent tan(χ) and conductivity ρ. Fig. 5. Thermoelectric test rig opened with the TEG foil under test in place. In the measurement of a TEG foil, the hot plate was heated up to 55 °C, while some ice was put on a bowl on the top of the test rig. Nine thermopairs of the twelve in total on the foil were connected to Agilent 34970A data acquisition unit via Agilent 34901A multiplexer board to measure the voltage and the electric power generated. The pt-100 temperature sensors were connected to the same data acquisition unit and the data was collected using a LabView software. The series resistance and thus also the electric power produced by the TEG foil was measured by loading the nine elements connected in series with changing resistance values. D. Antennas The two antenna types implemented on TCO, the RFID transponder and the Bluetooth antenna, have somewhat different specifications. Additionally to operating at different frequencies, the required input impedance as well as the Fig. 6. Alternative antenna types implemented on TCO. MATERIAL PARAMETERS USED IN THE ANTENNA TABLE I SIMULATIONS thickness of AZO Sheet resistance of AZO other materials ∂ ∂ ∂ ∂ ∂ Kapton NH/CS glass PET FR4 epoxy aluminum 400 nm 53 ς / □ tan(χ) 0.008 0.005 0.010 0.020 δr 3.4 5.5 2.8 4.4 ρ 3.8 * 107 S/m III. RESULTS AND DISCUSSION A. Thermoelectric generators The measured resistance of the TE module consisting of nine TEGs connected in series (100 ς) and the sheet resistance of AZO (53 ς/□) were used as the starting points (known values) for the simulations. The measured series resistance of the module includes the resistance of AZO and silver ink lines as well as all the unknown contact resistances between the silver ink contact lines and AZO. First, the contact resistance was adjusted to produce the measured resistance of the module in the simulations. Then the Seebeck coefficient was varied to obtain the maximum measured output power. A good match was found with S ≈ -73 λV/K that is in good accordance with the typical values of AZO reported in the literature [6], [12], [13]. The simulation results are shown in Fig. 7 where the output power is predicted for different temperature gradients as a function of load resistance. The parameters used in the simulations are listed in Table II. The thermal conductivity of AZO is also listed, although it has been shown that its influence on the device performance is negligible for such thin films [9]. TABLE II PARAMETERS USED IN THE SIMULATIONS OF FIG. 7 AND 9. Kapton AZO Conductors NH 25 0.12** 53 0.38 3.5 7.5≥10-4 Measured (or literature [24], [18]) values: ∂ Sheet resistance [ς/□] ∂ Thickness [λm] ∂ Thermal conductivity, ϕ [Wm-1K-1] ∂ Total resistance of 9 TEGs [ς] ∂ Contact resistance [ςcm2] Calculated from the measured values: ∂ Electrical conductivity, ρ [S/m] Obtained by fitting the simulations to the experimental data: 2.67≥107 100 30 5≥104 50 238 Seebeck coefficient, S [µV/K] -73 3.5 Power factor, PF [W/m/K2] 2.7≥10-4 5 Fig. 7. The simulated DC power generated by the nine elements of a TEG foil in series for different temperature gradients as a function of load resistance. Fig. 8 shows the temperatures and voltages as a function of time during the measurement with the test rig shown in Figs 4 and 5. The dashed lines represent the temperature differences I to IV; the temperature sensors shown in Fig. 4 are numbered by 1 to 5 from the left and the differences marked with roman numbers are between each neighboring pair (e.g. difference II is between sensors 2 and 3). The greatest temperature differences are in the middle of the rig (II and III) whereas differences I and IV on the sides are smaller. The solid lines represent voltages of each individual thermoelectric pair. The voltage level of these does not reflect the position of the pair, but seems to be "random", likely reflecting the quality of each pair. After first measuring the open-circuit voltage, when the TEGs are loaded only by the 10 Mς input resistance of the multimeter, resistive loads between 25 ς and 2 kς were connected between the ends of the series connection of the nine TEG elements. The effect of connecting the loads can be seen in Fig. 8, where the presence of the load resistances, numbered from 1 to 7, is marked on the voltage curves in the middle of the horizontal part of the curve, where the resistor is connected. The resistance values from 1 to 7 are respectively 2 kς, 955 ς, 512 ς, 196 ς, 100 ς, 47 ς and 25 ς− Finally, after the resistance of 25 ς ∋6−(, the TEGs are measured once more in the open-circuit mode, which can be seen on the voltages raising back to their high values. The decrease of the open- circuit voltage between the start and the end of the measurement is taken into account in the calculations. Fig. 9 shows the results of the loading measurement that is the produced DC power as a function of load resistance Rload, compared to the corresponding simulated values. The highest power of 1.6 µW is obtained at Rload ≈ RTEG ≈ 100 ς, where RTEG is the measured resistance of the TE module consisting of nine TEGs, as expected. 6 film, the electrical resistance of the proposed module gets high unless the aspect ratio of the legs is increased [9]. The Seebeck coefficient and electrical conductivity of AZO (Table II) are of the same order as those of many bulk TEGs, but inferior to those of the best materials. Generally, one potential risk of the AZO coating is its durability during the folding or handling of the flexible substrates, which may cause cracks on the coating [19]. In order to evaluate primarily the electrical performance of the TEG prototypes without additional fabrication related risks, the TEG foils were measured in a planar form with a special test rig. However, based on the literature [19] as well as the preliminary tests performed by the authors, the proposed folding scheme seems feasible as far as the cracking sensitivity is taken into account in the fabrication process and the sharpest bends positioned on the metal lines. Another option is to perform the deposition of AZO in a later phase, i.e. on the folded substrate and, thus, to avoid the need to handle the flexible substrate with AZO on it. For ALD this is a valid option, as it produces conformal thin films regardless of the direction of the targeted surface. Due to the limited availability of colorless Kapton CS, the TEG prototypes were made on yellow Kapton NH. This together with the wide silver conductors compromises the transparency of a window equipped with the TEG module. However, in these first prototypes the area of the silver conductor was not optimized and it is expected that, especially if the contact resistance between silver and AZO can be reduced, narrower conductors can be used in the future. B. RFID Transponder In a typical RFID transponder a small bare-die microchip is attached directly to an antenna inlay, which is also the case with the prototype studied here. Consequently, there is no ground area of a PCB available to be used as a part of the antenna, which means that the antenna type d) of Fig. 6 is not an option for an RFID transponder. In order to achieve conjugate impedance match with the microchip that has a capacitive input impedance, the input impedance of the antenna needs to be inductive. Therefore, antenna type b) of Fig. 6 is commonly used with commercial label type transponders [22]. However, the simulations showed that with the low conductivity of the AZO film, the parallel loop of any size does not produce inductive input impedance as it does with higher conductivities [21]. This leaves antenna type c) with an external loop made of high-conductivity material the only viable option. Further optimization of the antenna type c) showed that the highest radiation efficiency combined with the right input impedance can be achieved with the structure shown with its dimensions (in mm) in Fig. 10. The dimensions of the inductive coupling loop made of 17 µm thick aluminum on a PET substrate are shown in Fig. 11. Fig. 8. Temperature difference and voltage of the TEG elements on the foil as a function of time over the measurement sequence, during which the load resistance is also varied. Fig. 9. DC power generated by the nine elements of a TEG foil in series as a function of load resistance; measured and simulated values. When folded between glasses as shown in Fig. 3 (a), the area of the nine elements becomes 67 cm2. Thus, a regular window glass of 0.5 m2 can be equipped with 74 of these module elements, which produces about 118 µW with the 43 K temperature difference. However, using a more realistic long- time average temperature difference of 10 K (Fig. 2) and the simulation results of Fig. 7, the average power produced by such a window becomes 6.6 µW, which is still above the 3.3 µW power consumption of the use scenario given in Sec. II A. Although the produced power may seem small for the required area, the significant advantage of the proposed TEG design is that it minimizes the heat leakage through the module itself and, thus, maximizes the available temperature gradient under heatsink-limited conditions. Under similar conditions, the conventional TEGs can support only a fraction of the temperature gradient sustained by the proposed TEG, which in practice makes the former close to useless in the applications where efficient heat sinks cannot be used. This relates to the fact that the effective thermal conductivity of the folded TEG module is close to that of air, i.e. at least 30 - 150 times smaller than that of a conventional bulk TEG [25]. On the other hand, as the electrical current also flows in the plane of the thin AZO simulated and measured read ranges of the transponders as a function of frequency are shown in Fig. 13. 7 Fig. 10. Dimensions of the RFID transponder prototype in mm. Fig. 11. Dimensions of the inductive coupling loop in mm. The read range is a commonly used figure of merit for a passive UHF RFID transponder. The theoretical forward-link limited read range of the transponder can be calculated from the simulation results by: Fig. 12. Transponder prototype inside the measurement cabinet. (cid:3275)(cid:3295)(cid:3276)(cid:3282)(cid:3126)(cid:3275)(cid:3258)(cid:3252)(cid:4708)(cid:3118)(cid:3441) (cid:1844)(cid:3045)(cid:3032)(cid:3028)(cid:3031)= (cid:3030)(cid:2870)(cid:3104)(cid:3496)(cid:3017)(cid:3295)(cid:3299) (cid:3254)(cid:3258)(cid:3267)(cid:3265)(cid:3005)(cid:3295)(cid:3276)(cid:3282)(cid:3086)(cid:3295)(cid:3276)(cid:3282)(cid:3437)(cid:2869)(cid:2879)(cid:4708)(cid:3275)(cid:3295)(cid:3276)(cid:3282)(cid:3127)(cid:3275)(cid:3258)(cid:3252)∗ (cid:3017)(cid:3258)(cid:3252) (cid:3294)(cid:3280)(cid:3289)(cid:3294) , (2) where c is the speed of light, ϖ the angular frequency, Ptx EIRP the equivalent isotropically radiated power of the reader device, Dtag the directivity of the transponder antenna, γtag the radiation efficiency of the transponder antenna, ZIC the complex impedance of the microchip, Ztag the input impedance of the transponder antenna and PIC sens the read sensitivity of the microchip. '' denotes complex conjugate. Ptx EIRP = 3.28 W (2 W ERP), which is the maximum allowed radiated power of a UHF RFID reader as defined by ECC / ETSI [26]. The frequency-dependent impedance of the Monza R6 microchip ZIC is calculated, as specified by the manufacturer, by the parallel connection of chip resistance Rp (1200 ς), chip capacitance Cp (1.23 pF) and mounting capacitance Cmount (0.21 pF): ZIC = (Rp Cp Cmount) [27]. The chip sensitivity PIC sens = -20 dBm [27]. The other parameters of (2) are obtained as simulation results as a function of frequency. Four transponder prototypes were made using two sheets of AZO coated Kapton NH foils from different process batches. The prototypes are named 1A, 1B, 2A and 2B, with the number referring to the process batch. The prototypes were measured with Tagformance UHF RFID device using its own anechoic cabinet [28]. The transponder prototype inside the cabinet, supported by a piece of Styrofoam, is shown in Fig. 12. The evaluation is based on measuring the activation level of the transponder as a function of frequency in a fixed and known setup, which is normalized for each measurement series with a standard transponder, the frequency response of which is known [29]. As a result, the measurement gives the equivalent forward-link limited read range that is directly comparable with the values calculated by (2) from the simulation results. The Fig. 13. Simulated and measured theoretical read range of the transponder prototypes as a function of frequency. The graphs of Fig. 13 show that one of the prototypes, 1A, has a clearly lower read range than the rest three, which all have practically identical responses. Therefore, 1A can be excluded from the further analysis as a defective individual. The frequency band of the three is right for global operation, but their read range is shorter than that predicted by the simulation, namely 7.4 m vs. 9.6 m at 900 MHz. In terms of the power sensitivity of the transponder, the difference is 2.3 dB. The simulated radiation efficiency at 900 MHz is -6.8 dB (21 %). Consequently, if the difference in the sensitivity between the simulation and measurement results is explained by a difference in radiation efficiency, the measured radiation efficiency becomes -9.1 dB (12 %). A possible explanation for the difference is the transponder antenna being particularly sensitive to irregularities close to the coupling loop where the current density is at its highest [21]. The AZO coating on the edges of the antenna is likely to be somewhat irregular, compared to the smooth edges of the simulation model. When compared to commercial label transponders made by etching of aluminum, the radiation efficiency of which is about -0.5 dB (90 %) [22], the measured radiation efficiencies are quite low. However, the read range of 7.4 m is still adequate for many applications. By Eq. (2), the corresponding theoretical value for an antenna with -0.5 dB, the radiation efficiency is about 20 m [27]. C. Bluetooth antenna The electronics module is built around an nRF51422 microchip and has also several other components that are all assembled on a 26 mm 33 mm PCB. This PCB with its ground layers can be used as the second terminal of a dipole antenna, enabling the use of antenna type d) of Fig. 6 as the Bluetooth antenna. In order to combine the DC ground and the other terminal of the dipole antenna, BAL-NRF02D3 balun is connected between the nRF51422 microchip and the antenna. The required input impedance of the Bluetooth antenna is thus determined by the 50-Ohm output of the balun. Two types of transparent antennas were studied: AZO on glass and AZO on Kapton CS. In the antenna prototypes, the output of the balun was connected to the antenna using a 9 mm * 2 mm copper strip. The size of the antenna was optimized and its expected performance evaluated by simulations. Two antenna prototypes connected to the electronics module are shown in Fig. 14; the glass antenna on the left is attached to the PCB with a plastic clamp and the Kapton CS antenna is supported by a piece of Styrofoam and fixed to the PCB with a rubber band. Fig. 14. Two Bluetooth antenna prototypes: Glass antenna (a) and flexible Kapton CS antenna (b). In order to evaluate the antenna prototypes in terms of the radiation efficiency, they were measured in an anechoic cabinet. For the measurement, the Bluetooth module was programmed to continuously transmit carrier wave with 0 dBm power at the frequency of 2.45 GHz. The module was powered with a CR2032 Lithium battery to avoid any wires that would affect the antenna. The RF signal transmitted by the module was received with a Huber-Suhner 1324.19.0002 measurement 8 (3) antenna placed 0.45 m apart from the module in the cabinet. The received signal level was measured with Anritsu MS2830A spectrum analyzer. The radiation efficiency can then be calculated from the power budget of the measurement in decibel form: (cid:2015)((cid:1856)(cid:1828))=(cid:1842)(cid:3045)(cid:3051)−(cid:1838)(cid:3045)(cid:3051)−(cid:1833)(cid:3045)(cid:3051)−(cid:1827)(cid:3007)−(cid:1830)(cid:3047)(cid:3051)−(cid:1838)(cid:3029)−(cid:1838)(cid:3027)−(cid:1842)(cid:3047)(cid:3051), where Prx is the signal power measured by the spectrum analyzer, Lrx the attenuation of the cable between the spectrum analyzer and the receiver antenna, Grx the gain of the receiver antenna, AF the free-space attenuation, Dtx the directivity of the antenna prototype, Lb the insertion loss of the balun, LZ the attenuation due to impedance mismatch between the balun and the antenna prototype and Ptx the power transmitted by the Bluetooth module. Free-space attenuation can be calculated from the speed of light c, the frequency f and the distance between the antennas R:(cid:1827)(cid:3007)((cid:1856)(cid:1828))=20 (cid:1864)(cid:1867)(cid:1859)(cid:4672) (cid:3030)(cid:2872)(cid:3095)(cid:3033)(cid:3019)(cid:4673). (cid:1838)(cid:3027)=1−(cid:4672)(cid:3027)(cid:3250)(cid:2879)(cid:3027)(cid:3277)∗ (cid:3027)(cid:3250)(cid:2878)(cid:3027)(cid:3277)(cid:4673)(cid:2870). LZ can be calculated from the output impedance of the balun Zb (50 ς) and the complex input impedance of the antenna prototype ZA: The following values were used for (3): by measurement with a network analyzer Lrx = -2.6 dB, Grx = 8.5 dBi for Huber- Suhner 1324.19.0002 [30], by (4) AF = -33.3 dB (R = 0.45 m), Dtx is determined by simulation, Lb is -1.9 dB [31], LZ is calculated from the simulated input impedance of the antenna ZA using (5) and Ptx is 0 dBm. (5) Four antenna prototypes were measured; two with a 3 mm glass substrate ("A" and "B"), one with a 1 mm glass substrate ("D") and one with a 50 µm thick Kapton CS substrate. The substrates are coated with AZO on the both sides, so the three glass prototypes were measured with the both sides touching the coupling strip, leading to seven measurement cases in total. Simulated and measured parameter values of the antenna prototypes are listed in Table III; simulated input impedance, simulated directivity in the direction of the measurement antenna in the test setup, simulated radiation efficiency and the measured radiation efficiency calculated using (3). (4) SIMULATED AND MEASURED ANTENNA PARAMETERS @ 2.45 GHZ. TABLE III sample, substrate - side R 31 "A", Glass 3 mm - side 1 " "A", Glass 3 mm - side 2 " "B", Glass 3 mm - side 1 " "B", Glass 3 mm - side 2 30 "D", Glass 1 mm - side 1 " "D", Glass 1 mm - side 2 29 Kapton CS 50 µm simulated Dtx (dBi) 2.3 " " " 2.4 " 2.5 ZA (ς) X -12 " " " -15 " -17 meas. γ (dB) -0.4 -1.6 -1.0 -2.0 -2.7 -3.6 -3.8 γ (dB) -2.8 " " " -2.6 " -2.2 The results of Table III show that the measurements actually give higher radiation efficiencies than the simulations for the antenna prototypes implemented on the thick glass substrate; for thin glass the simulation and measurement results are quite close to each other and for Kapton CS substrate the measured value is 1.6 dB lower than that given by the simulation. As AZO coating is known to be somewhat brittle [19], one may assume that the rigid glass as a stable substrate ensures a more homogeneous coating. The achieved radiation efficiencies are comparable with or, as in the case of 3 mm glass substrate, better than the values of commercial chip antennas that are commonly used with Bluetooth modules. For such, -3 dB (50 %) is a typical value [32]. IV. CONCLUSION to The use of Al-doped Zinc oxide (AZO) to form thermoelectric generators and antenna conductors for an energy-autonomous wireless sensor node was studied and demonstrated. The operation of the both was first simulated and then verified by measurements on prototypes. The concept of harvesting energy from temperature differences on a window was first studied by measuring the temperature differences that occur between actual glasses of a window in Espoo, Finland. According the measurements, the fabricated TEG prototype with nine elements produced power of 1.6 µW with a temperature difference of 43 K. With a more realistic long-term temperature difference of 10 K, simulations predict the power of 90 nW for this device. When folded, the area of the device is about 67 cm2, which means that if a regular-sized window (0.5 m2) is filled with these thermoelectric modules, power of 6.6 µW is produced with the 10 K temperature difference. This is enough to power the sensor node used here as an example. However, as the power production varies a lot over time, an energy storage and an algorithm to control the power consumption of the electronics are needed. As is characteristic for TEGs, raising the temperature difference increases the power very rapidly. Therefore, environments with more extreme conditions may provide interesting use cases for this solution. The antennas, that is those for UHF RFID transponders and for Bluetooth radio, were also successfully demonstrated. UHF RFID transponder antennas implemented on a flexible Kapton NH substrate produced correct frequency response, but their sensitivity remained 2.3 dB below what was predicted by the simulations, the corresponding measured radiation efficiency being about -9.1 dB at 900 MHz. The Bluetooth antennas implemented on glass appeared to produce higher radiation efficiencies than the one with the flexible substrate. When compared to the simulation results, the ones made on 3 mm glass gave actually better efficiency values than what was predicted by the simulations. The radiation efficiency values of the Bluetooth antennas varied between -3.8 dB and -0.4 dB, depending on the substrate. Higher radiation efficiency and better correspondence with the simulations of the glass antennas may be due to the AZO coating being more stable on a rigid substrate. 9 ACKNOWLEDGMENT The authors would like to thank R. Ritasalo from Picosun for providing the AZO coating by ALD process for the prototypes. The authors would also like to thank their colleagues at VTT: M. Hillukkala, M. Korkalainen, I. Marttila and T. Pernu for the development of the electronics of the sensor node, and R. Grenman and M. Vilkman for screen printing the silver conductors on the TEG foils. DuPont is acknowledged for bringing the experimental CS Series of Kapton available. REFERENCES [1] C. Buratti, A. Conti, D. Dardari, and R. Verdone, "An overview on wireless sensor networks technology and evolution," Sensors (Basel), 2009, vol. 9, no. 9, pp. 6869 -- 96 [2] K. Z. Panatik, K. Kamardin, S. A. Shariff, S. S. Yuhaniz, N. A. Ahmad, O. M. Yusop and SA Ismail, "Energy harvesting in wireless sensor networks: A survey", 2016 IEEE 3rd International Symposium on Telecommunication Technologies (ISTT), 2016, pp. 53 - 58 [3] A. M. Abdal-Kadhim and K. S. 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Carvalho, "Design of high order modulation backscatter wireless sensor for passive IoT solutions", 2016 IEEE Wireless Power Transfer Conference (WPTC), 2016 [8] Datasheet of Nordic Semiconductors nRF51422 Multiprotocol ANT™/Bluetooth® low energy System on Chip, accessed on May 8, 2018. [Online]. Available: http://infocenter.nordicsemi.com/pdf/nRF51422_PS_v2.1.pdf [9] K. Tappura, "A numerical study on the design trade-offs of a thin-film thermoelectric generator for large-area applications". Renewable Energy vol. 120, pp. 78 -- 87, May 2018. DOI: 10.1016/j.renene.2017.12.063 [10] K. Ellmer, "Past achievements and future challenges in the development of optically transparent electrodes", Nature Photonics, Vol. 6, Dec. 2012, DOI: DOI: 10.1038/NPHOTON.2012.282 [11] T. Dhakal, A. S. Nandur, R. Christian, P. Vasekar, S. Desu C. Westgate, D.I. Koukis, D.J. Aren, D.B. Tanner, "Transmittance from visible to mid infra-red in AZO films grownby atomic layer deposition system". 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Daly, "Transparent Antennas for Wireless Systems Based on Patterned Indium Tin Oxide and Flexible Glass", 2017 IEEE 67th Electronic Components and Technology Conference (ECTC), 2017, pp. 1443 - 1448 [16] M. Awalludin, M. T. Ali, M. H. Mamat, "Transparent antenna using aluminum doped zinc oxide for wireless application", 2015 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE), [17] T. Tynell, R. Okazaki, I. Terasaki, H. Yamauchi and M. Karppinen, "Electron doping of ALD-grown ZnO thin films through Al and P substitutions", J. Mater. Sci. vol. 48, 2013, pp. 2806 -- 2811. DOI: 10.1007/s10853-012-6942-9 [18] Datasheet of Kapton® polymimide film by DuPont™, accessed on May 8, 2018. [Online]. http://www.dupont.com/content/dam/dupont/products-and- services/membranes-and-films/polyimde-films/documents/DEC-Kapton- general-specs.pdf and http://www.shagal- thermal.solutions/itemfiles/168940_kapton%20shagal.pdf [19] C.-Y. Peng, M. M. Hamasha, D. VanHart, S. Lu, and C. R. Westgate, "Electrical and Optical Degradation Studies on AZO Thin Films Under Cyclic Bending Conditions", IEEE Transactions on Device and Materials Reliability, vol. 13, no. 1, pp. 236 -- 244, Mar 2013. [20] Heat Transfer and AC/DC Module User's Guides. Multiphysics® v. 5.3. COMSOL AB, Stockholm, Sweden. COMSOL [21] K. Arapov, K. Jaakkola, V. Ermolov, G. Bex, E. Rubingh, S. Haque, H. Sandberg, R. Abbel, G. de With and H. Friedrich, "Graphene Screen- printed Radio-frequency Identification Devices on Flexible Substrates", Physica Status Solidi -- Rapid Research Letters, Volume 10, Issue 11; Nov 2016, pp. 812 -- 818 [22] P. Nikitin, K. V. S. Rao, and S. Lam, "Antenna design for UHF RFID tags: A review and a practical application," IEEE Trans. Antennas Propag., vol. 53, no. 12, Dec. 2005, pp. 3870 -- 3876 [23] Ansys HFSS High Frequency Electromagnetic Field Simulation, accessed on May 8, 2018. [Online]. 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Available: https://support.impinj.com/hc/article_attachments/115001963950/Monza %20R6%20Tag%20Chip%20Datasheet%20R5%2020170901.pdf [28] Tagformance by Voyantic, accessed on May 8, 2018. [Online]. Available: http://voyantic.com/tagformance [29] P. Nikitin, K. V. S. Rao, S. Lam. UHF RFID Tag Characterization: Overview and State-of-the-Art, accessed on May 8, 2018. [Online]. Available: https://pdfs.semanticscholar.org/4c92/ad48e34cf7ef6a11e7652819cb6cb 293d9e2.pdf [30] Datasheet of HUBER+SUHNER 1324.19.0002 antenna, accessed on May 8, 2018. [Online]. Available: http://www.firstsourceinc.com/DataSheets/HuberSuhner/22649580.pdf [31] Datasheet of ST Microelectronics balun BAL-NRF02D3, accessed on May 8, 2018. [Online]. Available: http://www.st.com/content/ccc/resource/technical/document/datasheet/8 a/a7/b0/f7/24/fc/44/9f/DM00087690.pdf/files/DM00087690.pdf/jcr:cont ent/translations/en.DM00087690.pdf [32] Application Note of Fractus Bluetooth, 802.11b/g WLAN Chip Antenna by Texas Instruments, accessed on May 8, 2018. [Online]. Available: http://www.ti.com/lit/an/swra092b/swra092b.pdf 10 Technology (Tech.) degree Kaarle Jaakkola received the Master of Science in electrical engineering from the Helsinki University of (currently Aalto University), Espoo, Finland, in 2003. Since 2000 he has been working at the VTT Technical Research Centre of Finland, currently as a Senior Scientist. interests and expertise His research include RFID systems, electronics, wireless and applied sensors, antennas, electromagnetic modelling and RF electronics. He has e.g. developed RF parts for RFID systems and designed antennas for both scientific use and commercial products. Antennas designed by him can be found in several commercial RFID transponders. Kirsi Tappura received the M.Sc. (Tech.) with distinction, Lic.Sc. (Tech.), and D.Sc. (Tech.) degrees in technical physics from the Tampere University of Technology (TUT), Tampere, Finland, in 1990, 1992, and 1993, respectively. research continued She her physics on semiconductor and optoelectronics at TUT as a Research Scientist, Project Manager and a Postdoctoral Research Fellow of the Academy of Finland until joined the Nokia Research Center as a Senior Research Scientist involved with novel electronic displays. Since late 1997, Dr. Tappura has been with the VTT Technical Research Centre of Finland, Espoo/Tampere, Finland, since 1999 as a Senior Scientist and, since 2011, as a Principal Scientist serving also as a Team Leader of modelling, sensors and energy materials related teams during 1999-2001 and 2006-2012. Since 1999, she has also been a Docent of Physics with TUT. Dr. Tappura is currently a Principal Scientist with VTT. Her research interests include the optical (including plasmonic), electronic and thermal properties of various sensing, detector/imaging and energy harvesting devices with an emphasis on computational physics.
1709.01361	2	1709	2017-09-17T18:37:17	Response to Comments in Exact and -exact- formulae in the theory of composites (arXiv:1708.02137v1 [math-ph], 7 August 2017)	[ "physics.app-ph" ]	In this paper we present our response to the comments by Andrianov and Mityushev regarding a recent publication of ours on the determination of the effective thermal conductivity of multiscale ordered arrays.	physics.app-ph	physics	Response to Comments in "Exact and "exact" formulae in the theory of composites" (arXiv:1708.02137v1 [math-ph], 7 August 2017) Manuel Ernani Cruza,∗, Juli´an Bravo-Castillerob aUFRJ-Federal University of Rio de Janeiro, PEM/COPPE, CP 68503, Rio de Janeiro, RJ, bFacultad de Matem´atica y Computaci´on, Universidad de La Habana, San Lazaro y L, Vedado, 21941-972, Brazil CP 10400, Cuba Abstract In this paper we present our response to the comments by Andrianov and Mityu- shev regarding a recent publication of ours on the determination of the effective thermal conductivity of multiscale ordered arrays. In their recent publication, Andrianov and Mityushev [1] discuss the proper utilization of the terms analytical formula, approximate solution, closed form so- lution, asymptotic formula and others in the context of methods devoted to the determination of effective properties of composite materials. Since the pioneering works by Lord Rayleigh [2] and Maxwell [3] it is verified that the determination of effective properties of heterogeneous materials [4] chal- lenges researchers active in diverse fields, spanning physics, mathematics, and engineering disciplines. As a consequence, a wide range of methods and tech- niques have been developed using different building blocks. It is, therefore, not unexpected that differences in notations and in the usage of some terms are bound to occur. In their publication, Andrianov and Mityushev [1] makes several comments on our recent paper [5] concerned with the calculation of the effective thermal conductivity of three-scale arrangements of circular cylinders and spheres orderly arranged, respectively, in the 2-D square and 3-D simple cubic arrays. For that ∗Corresponding author. Email addresses: [email protected] (Manuel Ernani Cruz), [email protected] (Juli´an Bravo-Castillero) matter, we would like to thank Andrianov and Mityushev for their interest in our paper. In Ref. [5], the inclusions (circular cylinders or spheres) are periodically dis- tributed throughout two microstructural levels of disparate length scales, such that the ratio of the radii of two inclusions in the small z-scale microstructural level and in the intermediate y-scale level is infinitesimally small for finite concentrations. To characterize the macroscopic behavior of such arrays through the calculation of their effective conductivities, the present authors combine the analytical results derived in [6] from application of the reiterated homogenization method [7, 8] to the multiscale heat conduction problem with known algebraic formulae [9, 10] for the effective conductivities of the respective individual two-scale (monodisperse) arrays. The first comment by Andrianov and Mityushev regards the sentences "The in- teraction of periodic multiscale heterogeneity arrangements is exactly accounted for by the reiterated homogenization method. The method relies on an asymptotic expansion solution of the first principles applied to all scales, leading to general rigorous expressions for the effective coefficients of periodic heterogeneous media with multiple spatial scales." used in Ref. [5] to indicate one of the strengths of the adopted approach. Andrianov and Mityushev [1] affirm that "This declaration is not true, because a large particle does not interact with another particle of vanish- ing size." It is remarked, that the present authors do not declare in Ref. [5] that a large particle interacts with another particle of vanishing size. Certainly, there are thermal interactions of particles in the intermediate y-scale microstructural level, and there are interactions of particles in the small z-scale microstructural level. In addition, there is a thermal interaction of the whole small-scale microstruc- tural level with the whole intermediate-scale microstructural level, such that the effective conductivity of the three-scale medium changes relative to that of the two-scale medium, as demonstrated in Ref. [5]. The reiterated homogenization method does exactly account for all these interactions, in the asymptotic limits required by the theory [7, 8]. In the light of this second interpretation, the original sentences in Ref. [5] are, indeed, true. The second comment by Andrianov and Mityushev regards the fact that, in their view, an effective medium approximation valid for dilute composites was ac- tually applied in Ref. [5] as the reiterated homogenization theory. Andrianov and Mityushev [1] then conclude that "As a consequence, formulae (18) and (19) from [5] can be valid to the second order of concentration and additional numerically calculated "terms" are out of the considered precision" (to avoid confusion here and elsewhere, we use the reference numbers in the reference list of this present 2 paper, rather than those used in Ref. [1]). In Ref. [5], the present authors do not apply effective medium approximations in lieu of reiterated homogenization theory. Instead, it is first observed in Ref. [5] that the expression for the effective thermal conductivity of a two-scale periodic medium obtained by conventional ho- mogenization [7, 8] is similar to the expressions for the effective conductivities of a three-scale periodic medium obtained by reiterated homogenization [6, 8]. This similarity allowed the present authors to derive equation (16) in Ref. [5], which, together with Eqs. (8) and (10) of the same reference, permit the physically mean- ingful comparison of the effective conductivity of a two-scale (monodisperse) het- erogeneous medium with that of a three-scale (bidisperse) heterogeneous medium with similar parameters. Specifically, to carry out the comparison with numerical values of effective conductivity, as pointed out in the beginning of Section 3 in [5], computations were performed using well-known algebraic formulae available in the literature [9, 10] for two-scale media, thus valid for each microstructural level of the considered three-scale media, in view of the mentioned similarity. Al- though the formulae (18) and (19), obtained from [9], and also formulae (20) and (21), obtained from [10], used in Ref. [5] have limited precision, as Andrianov and Mityushev [1] point out, they are not restricted to the dilute regime of con- centration for composites. In fact, terms up to the 7th order in concentration are included in formulae (18)-(19), and terms up to the 9th order in concentration are included in formulae (20)-(21). These attributes of the formulae were noted in Ref. [5], where the objective was to demonstrate the gains in effective conduc- tivity obtained with (bidisperse) three-scale arrays relative to the (monodisperse) two-scale counterparts. Lastly, the third comment by Andrianov and Mityushev [1] states that "The considered problem refers to the general polydispersity problem discussed in 2D statement in [11]. It is not surprisingly that the description of the polydispersity effects in [11] and [5] are different since the "exact" formula from [5] holds only in the dilute regime. This is the reason why the effective conductivity is less than the conductivity of matrix reinforced by higher conducting inclusions in Figs. 3 and 7 of [5] for high concentrations." Again, as remarked before, the formulae (18)-(19) and (20)-(21) used in Ref. [5] hold beyond the dilute regimes of the respective square and cubic arrays [9, 10]. Interestingly, it is possible to view the study in Ref. [5] as dealing with a polydispersity problem. However, the problem considered in Ref. [5] is a specific limiting case of polydispersity, namely, that due to periodic inclusions located in different microstructural levels of very disparate length scales. It is apparent that this particular polydispersity two-level problem does not fit into the description of the one-level media dealt with in Ref. [11]. In 3 particular, the three-scale periodic arrays obey the volume fraction formula (8) in Ref. [5]. It is not possible to apply formulae (5) and (6), and the microstructure depicted in Fig. 2 in Ref. [11] to geometrically describe the three-scale periodic arrays. Therefore, the study in Ref. [11] is not directly applicable to the study in Ref. [5]. Figs. 3 and 7 in Ref. [5] show the gains in the effective conductivities of the (bidisperse) three-scale arrays relative to the corresponding (monodisperse) two-scale arrays, not the gains relative to the matrix. As also obtained in [11], de- pending on the problem volume fractions, the bidisperse three-scale-array effec- tive conductivity can increase or decrease relative to the monodisperse two-scale- array effective conductivity, and thus can display the S-shape behavior pointed out by Andrianov and Mityushev [11]. However, beyond a certain bulk volume frac- tion, the three-scale-array effective conductivity is less than the two-scale-array effective conductivity for the whole range of the small z-scale volume fraction. As pointed out in Ref. [5], this behavior occurs when the path for heat transfer no longer improves, as one removes material and reduce the size of the inclusion at the intermediate y-scale, and distribute the material as inclusions at the small z-scale. This is physically plausible for the ordered two-level arrays considered in Ref. [5], for which the relations (63) for the bumping model in [11] are not verified due to the different laws of formation for the microstructures. Acknowledgments MEC thanks the support provided by CNPq-Brazilian National Council for Scientific and Technological Development. JB acknowledges the C´atedra Ex- traordinaria IIMAS and PREI-DGAPA, UNAM. References [1] I. Andrianov, V. Mityushev, Exact and "exact" formulae in the theory of composites, arXiv:1708.02137v1 [math-ph] (2017), 7 August 2017. [2] Lord Rayleigh, On the influence of obstacles arranged in rectangular order upon the properties of a medium, Phil. Mag., 34 (1892) 481-502. [3] J.C. Maxwell, A Treatise on Electricity and Magnetism, 2nd ed., vol. 1, Clarendon Press, Oxford, 1881. 4 [4] S. Torquato, Random heterogeneous materials, microstructure and macro- scopic properties, Springer-Verlag New York, Inc., New York, 2002. [5] E.S. Nascimento, M.E. Cruz, J. Bravo-Castillero, Calculation of the effec- tive thermal conductivity of multiscale ordered arrays based on reiterated homogenization theory and analytical formulae, Int. J. Eng. Sci., 119 (2017) 205-216. [6] E.I. Rodr´ıguez, M.E. Cruz, J. Bravo-Castillero, Reiterated homogenization applied to heat conduction in heterogeneous media with multiple spatial scales and perfect thermal contact between the phases, J. Braz. Soc. Mech. Sci. Eng., 38 (2016) 1333-1343. [7] N. Bakhvalov, G.P. Panasenko, Homogenisation: Averaging processes in pe- riodic media. Kluwer, Dordrecht, 1989. [8] A. Bensoussan, J.-L. Lions, G. Papanicolaou, Asymptotic analysis for pe- riodic structures, North-Holland Publishing Company, Amsterdam, The Netherlands, 1978. [9] R. Manteufel, N. Todreas, Analytic formulae for the effective conductivity of a square or hexagonal array of parallel tubes, Int. J. Heat Mass Tran., 37 (1994), 647-657. [10] A. Sangani, A. Acrivos, The effective conductivity of a periodic array of spheres, Proc. Roy. Soc. London A, 386 (1983), 263-275. [11] L. Berlyand, V. Mityushev, Increase and decrease of the effective conduc- tivity of a two phase composites due to polydispersity, J. Stat. Phys., 118 (2005) 481-509. 5
1911.11685	1	1911	2019-11-26T16:41:44	Inverted rear-heterojunction GaInP solar cells using Te memory effect	[ "physics.app-ph" ]	Tellurium allows attaining heavy n-type doping levels in GaAs, which is suited to achieve very low contact resistivities in solar cells. Besides, it modifies the energy bandgap of MOVPE-grown GaInP by reducing the group-III sublattice ordering and presents a strong memory effect which induces residual n-type doping in subsequent layers, potentially detrimental to the performance of the solar cell. In this work, we present an inverted rear-heterojunction GaInP solar cell that employs a thick Te-doped GaInP layer as absorber, with a doping profile obtained exclusively by controlling the memory effect of Te coming from the preceding growth of a heavily doped GaAs contact layer. In this way, GaInP is partially disordered with the use of no additional surfactant, leading to an increase in the solar cell bandgap of around 35 meV as compared to traditional samples doped with silicon. In the proof-of-concept experimental devices developed so far, the use of a rear-heterojunction configuration and the bandgap increase results in a global open-circuit voltage enhancement of 109 mV. The photocurrent decreases by 1.32 mA/cm2, mostly due to the bandgap blue-shift, with about 0.35 mA/cm2 attributable to lower carrier collection efficiencies. These preliminary results are discussed by analyzing the I-V curve parameters and quantum efficiencies of a Te-doped rear-heterojunction, a Si-doped rear-heterojunction and a Si-doped front-junction solar cell. An additional advantage is that the emitter sheet resistance is reduced from 551 to 147 ohms/sq, which offers potential for higher efficiencies through lower front grid shadowing factors, as demonstrated with the concentrator measurements presented.	physics.app-ph	physics	Inverted rear-heterojunction GaInP solar cells using Te memory effect Manuel Hinojosa, Iván García, Ignacio Rey-Stolle and Carlos Algora Instituto de Energía Solar - E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid, Madrid, Spain Corresponding author: [email protected] ABSTRACT Tellurium allows attaining heavy n-type doping levels in GaAs, which is suited to achieve very low contact resistivities in solar cells. Besides, it modifies the energy bandgap of MOVPE-grown GaInP by reducing the group- III sublattice ordering and presents a strong memory effect which induces residual n-type doping in subsequent layers, potentially detrimental to the performance of the solar cell. In this work, we present an inverted rear- heterojunction GaInP solar cell that employs a thick Te-doped GaInP layer as absorber, with a doping profile obtained exclusively by controlling the memory effect of Te coming from the preceding growth of a heavily doped GaAs contact layer. In this way, GaInP is partially disordered with the use of no additional surfactant, leading to an increase in the solar cell bandgap of around 35 meV as compared to traditional samples doped with silicon. In the proof-of-concept experimental devices developed so far, the use of a rear-heterojunction configuration and the bandgap increase results in a global open-circuit voltage enhancement of 109 mV. The photocurrent decreases by 1.32 mA/cm2, mostly due to the bandgap blue-shift, with about 0.35 mA/cm2 attributable to lower carrier collection efficiencies. These preliminary results are discussed by analyzing the I-V curve parameters and quantum efficiencies of a Te-doped rear-heterojunction, a Si-doped rear-heterojunction and a Si-doped front-junction solar cell. An additional advantage is that the emitter sheet resistance is reduced from 551 to 147 Ω/, which offers potential for higher efficiencies through lower front grid shadowing factors, as demonstrated with the concentrator measurements presented. 1. Introduction GaInP is a III-V semiconductor commonly used as the absorber material in the top subcell of most of high-efficiency multijunction solar cell (MJSC) architectures [1] [2] [3] [4]. The potential of this material has to do with (i) a suitable bandgap (Eg) for the top cell in a 3-or-4 junction solar cell when lattice-matched to GaAs or Ge and with (ii) a high electronic quality which allows to efficiently collect the minority carriers generated in the bulk by the absorption of photons. The design of the GaInP top subcell layers and its epitaxial growth process aims to achieve a subcell performance as high as possible -- high collection efficiencies and low recombination currents -- while making it 1 compatible with a high overall performance of the MJSC device. For instance: the use of surfactant elements to blue-shift its bandgap is normally desired to optimize the MJSC performance but can affect the performance of the top cell [5]; the reduction of the MJSC overall series resistance involves the GaInP top cell emitter sheet resistance (Rshe) design [6] or the use of very high doping levels in the front contact layer -- only separated by a few nm from the top subcell active layers -- to obtain low specific metal/semiconductor contact resistances (ρc) can interact with the GaInP subcell through diffusion [7], memory effect [8] or the injection of point defects [9]. When GaInP is grown in a metal-organic-vapour-phase-epitaxy (MOVPE) reactor, it typically presents some spontaneous ordering in the group-III sublattice, which lowers its Eg and, consequently, reduces the open-circuit-voltage (Voc), the transmitted light to subcells underneath and, in the end, the maximum theoretical efficiency attainable by the MJSC [10]. One common strategy to minimize such effect is based on the use of surfactant elements, such as Sb [11] [5], during the growth of the GaInP absorber, in order to promote disordering and get its bandgap as close to the ideal as possible. However, the use of Sb during the growth of a GaInP solar cell must be carefully evaluated as it has proven to reduce the lifetime of carriers [12] [13]. On another note, the lateral spreading of the current from the semiconductor towards the front metal contact occurs in the emitter and window layers of the topmost subcell. Therefore, the reduction of the top subcell Rshe is of particular interest in concentrator applications as it allows to obtain higher peak efficiencies in the trade-off between series resistance and shadowing factor that decides the front grid finger density. Although a common way to address this issue is based on highly-doped thin-emitters [6], recent works have demonstrated that rear-heterojunction designs (RHJ), with thick n-type emitters, can achieve enough minority carrier diffusion lengths to collect carriers generated far away from the junction, improve the external radiative efficiency (ηext) over traditional front-junction (FJ) structures and even decrease the Rshe, since the doping level is reduced by a lower factor than the emitter thickness increase, as shown by Geisz et al. with GaInP single-junction solar cell efficiencies exceeding 20% at 1 sun [14]. Another crucial parameter to take into account is the front metal-semiconductor specific contact resistance, which, in brief, determines the total metal area (i.e., the shadowing factor) that is necessary to ensure a lossless current transfer from the semiconductor to the metal. For the typical metal systems used, a high doping level in the semiconductor contact layer is required. 2 In an epitaxial growth process, the use of Te presents some benefits as compared to other typical n-type elements like silicon (Si), such as a non-amphoteric nature or the possibility to reach very high doping levels [15], but also involves some growth effects that have to be considered, namely: (i) Te tends to stay on the growth surface and acts as surfactant, reducing the CuPt sublattice ordering [16] or (ii) it presents a remarkable memory effect [17], which is the tendency of an element to continue incorporating into the epilayers after it has been shut-off, complicating the achievement of abrupt doping profiles. Figure 1. SIMS measurement of n-type dopants in a traditional inverted GaInP solar cell. Due to the memory effect, Te continues incorporating after the DETe flow is shut-off. Other elements not shown have been used to delineate the layers. To illustrate the relevance of Te-memory effect in a MOVPE epitaxial process, Fig. 1 presents a SIMS measurement of the concentration of the n-type dopant elements used in our traditional FJ inverted GaInP solar cell. This solar cell design, sketched in the inset of Fig. 1 and detailed in next section, employs a thin Si-doped GaInP layer as emitter and a heavily Te-doped GaAs layer as contact layer, which is grown at the beginning of the structure to ensure a low specific metal contact resistance. In order to minimize the residual Te incorporation in the cell absorber, an additional Si-doped GaAs layer is placed between the AlInP window layer and the GaAs contact layer. As expected, a gradual reduction in [Te] takes place in the mentioned GaAs layer after DETe is shut off. However, 3 [Te] increases as soon as the phosphide layers start, decreasing steadily as the growth proceeds. This appears to indicate that Te atoms staying on the growth surface are incorporated more efficiently in (Al)(Ga)InP than in GaAs leading to a residual concentration within a range of 4·1016 to 1·1017 atoms/cm3 in the phosphide absorber layers, including the p-type base layer. Therefore, a higher Zn flow is required to achieve the nominal p-type doping level with this background n-type doping giving rise to a high compensation factor in the final Zn-doped (1·1017 cm-3) base layer. In this work we consider tellurium (Te) both as n-type doping element and disordering surfactant in the thick emitter of a RHJ GaInP solar cell (Te-RHJ). The genesis of this study is in an effort to take advantage of the high doping levels and low diffusion coefficient of Te in GaAs to achieve a very good contact layer [18] while dealing with the memory effect explained above and illustrated in Fig. 1. Note that in these inverted designs the contact layer suffers a heavy thermal load during the growth of the rest of the multijunction structure. Using other dopants such as Se, which also allows to obtain very high doping levels, has been found to produce diffusion-related problems in these inverted structures [7]. We describe a method to grow an inverted RHJ solar cell formed by a thick n-GaInP absorber with doping obtained exclusively by modulating the memory effect of Te. This solution allows to use to our advantage the unavoidable memory effect of Te coming from a highly doped front contact layer by (i) increasing the bandgap and the Voc by the reduction of the spontaneous partial CuPt ordering without the use of any additional surfactant; (ii) reducing the emitter sheet resistance by the increase of the emitter thickness and average doping level and (iii) further increasing the Voc by using a RHJ architecture which has already demonstrated to enhance the radiative efficiency of a GaInP solar cell. The contributions to the experimental Voc gain corresponding to the bandgap increase and the solar cell configuration are assessed through the comparison of Te-doped RHJ samples with a Si-doped FJ and a Si-doped RHJ benchmark samples. In this work we present and analyze the first experimental results corresponding to prototype, proof-of-concept implementations of this solar cell design. Further optimizations of these devices are possible by tackling the effect of the slightly lower collection efficiency observed in the RHJ configuration, which is discussed in detail. 4 2. Experimental A set of solar cell samples were grown on GaAs substrates with a miscut of 2º towards the (111)B plane in a horizontal low-pressure MOVPE reactor (AIX 200/4). The precursors used were AsH3 and PH3 for group-V, TMGa and TMIn for group-III and DETe, DTBSi and DMZn for doping elements. The semiconductor structure of the inverted Te-RHJ solar cells, sketched in Fig. 2, is based on the RHJ design mentioned above [14]. It begins with a n++ GaAs front contact layer doped using a fixed DETe concentration and growth conditions for all the samples, at values determined to obtain Te doping levels around 1·1020 cm-3 that allow very good metal/semiconductor specific contact resistances [18]. Then, at a fixed temperature of 675ºC, 25 nm of Al0.53In0.47P (AlInP) and 25 nm of Ga0.51In 0.49P (GaInP) are grown while injecting DETe concentrations which vary from run to run, referred to as phosphide Te preload flows from now on. We test 4 different Te preloads: one where Te is flown only during the growth of the contact layer, without phosphide Te preload (Te-RHJ#1); and other three where Te is additionally injected during the first nanometers of the phosphide layers, with varying phosphide Te preloads flows (Te-RHJ#2 to #4). After the preload step, the DETe run valve is switched-off and the remainder of the GaInP absorber layer is grown being doped exclusively by the memory effect of Te. GaInP is grown using a V/III ratio of 120, a growth rate of 4.4 µm/h and molar flows of fTMIn = 9.5·10-5 mol/min and fTMGa = 4·10-5 mol/min. Finally, a p+ Al0.25Ga0.25In0.49P layer (AlGaInP), doped to around 1·1018 cm-3, forms the rear p-n junction, and a p++-GaAs layer, the back contact. 5 Figure 2. Structures of the GaInP solar cells compared in this work (a) Te-RHJ; (b) Si-FJ and (c) Si-RHJ. In (a), the n-type doping of a thick absorber is obtained through Te memory effect using four variants of Te preload in the contact layer and first nanometers of the phosphide layers. These mentioned Te-RHJ structures are compared to two benchmark GaInP solar cells: a traditional front-junction design consisting of a thin-emitter of 180 nm Si-doped GaInP and a 700 nm Zn-doped GaInP base (Si-FJ); and a RHJ based on a 850 nm Si-doped thick GaInP emitter (Si-RHJ). Further details of the structures are provided in Fig. 2. All solar cells were fabricated using the inverted metamorphic (IMM) solar cell fabrication process as described in [19] with an active area of 0.1 cm2 and an inverted square front grid. Both front and rear contacts are based on ~300 nm of gold deposited by electroplating. Concentrator solar cells are also fabricated in the same way, but using a Pd/Ge/Ti metal system for the front contact, leading to a specific semiconductor/metal resistance of 10-6 Ω·cm2 and a metal sheet resistance around 30 mΩ/ [18], minimizing the impact of the front grid on the performance at high concentrations. Electrical doping profiles of different samples were obtained by electrochemical capacitance voltage (ECV). Compositions were measured by conventional high-resolution X-Ray diffraction (XRD) scans, obtained with an X-Pert Panalytical diffractometer. Electroluminescence (EL) measurements were taken using a Keithley 2602A instrument for current bias and a Maya2000, fiber-based, calibrated spectrometer for light detection. Cross-sectional cathodoluminescence (CL) measurements were taken 6 using a XiCLOne (Gatan UK) CL system attached to a LEO 1530 (Carl-Zeiss) field-emission scanning electron microscope (FESEM), using e-beams of 5 kV. The excitation volume in the sample is simulated by a Monte Carlo simulator (CASINO) [20]. Solar cell characterization includes external quantum efficiency (EQE) and reflectance (R) carried out using a custom-made system based on a Xe lamp and grating monochromator. The internal quantum efficiency (IQE) was calculated from the EQE and the R as IQE=EQE/(1-R). Dark and one-sun I-V curves were taken using a Keithley 2602A instrument and the light source was a Xe-lamp based solar simulator. The bandgap offset (Woc) was calculated as Woc=Eg/q -- Voc. Eg is estimated as the wavelength corresponding to the maximum emission in the EL spectra. Emitter sheet resistances were obtained using the Van der Pauw method [21]. The solar cell devices used for EQE measurements have front contacts without grid to eliminate shadowing on the measurement. Finally, I-V curves under concentration were measured using a custom made, flash-lamp based, setup. 3. Results and Discussion 3.1. Material characterization All growth conditions (except the injection of Te during the preload) are kept constant in order to evaluate the effect of Te on the electrical and optical properties of GaInP independently of other parameters. By using the same substrate orientation, V/III ratio, phosphine partial pressure and growth rate -- all known to alter the degree of ordering in GaInP [22] [23] [24] -- , the surfactant activity of Te can be correlated with an energy bandgap variation, for a given composition. However, although all samples were grown nominally lattice-matched to the GaAs substrate, deviations in the order of ±200 arcsec were observed in XRD scans, revealing slight deviations in composition, strain and, therefore, in the bandgap. In order to obtain fair comparisons, fully relaxed and perfectly lattice-matched to GaAs bandgaps are also calculated by using the method proposed in [25] and assuming fully strained GaInP layers. Therefore, the characteristic parameters contemplated for each sample in this section, presented in Table I, include: (1) phosphide Te preload flow; (2) energy bandgap of the resulting sample; (3) angular 7 separation of the substrate and layer peaks in XRD; (4) composition and, finally, (5) corrected bandgap for an exactly lattice-matched composition. Table I. Bandgap obtained by EL; layer and substrate XRD peaks angular separation; Ga composition; and corrected bandgap of different solar cells grown by using different preload DETe molar flows (fDETe) Sample ID fDETe preload flow (mol/min) Te-RHJ#1 - Te-RHJ#2 Te-RHJ#3 Te-RHJ#4 5·10-9 4·10-8 3·10-7 Eg (eV) 1.835 1.873 1.871 1.874 XRD angular Ga separation composition (arcsec) 164 -65 -92 -205 0.522 0.511 0.510 0.504 Corrected Eg (eV) 1,831 1.876 1.875 1.883 Figure 3. ECV measurements taken from the AlGaInP (p-type) layer to the GaInP absorber (n-type) of the 4 different solar cells grown using different DETe molar flows (fDETe) at the initial 50 nm of the AlInP/GaInP layers. The memory effect of Te gives rise to a gradual free-electron concentration along the GaInP layer in all cases (Fig.3) as expected from previous works [8]. However, the doping level along the total thickness, as well as the bandgap, get higher with higher phosphide Te preloads. Bandgap values as high as ~1.88 eV were measured. Surprisingly, Te-RHJ#2 and Te-RHJ#3, with one order of magnitude different phosphide Te preload flows, present similar carrier 8 concentration profiles, whereas the doping profile is significantly altered when the DETe phosphine preload is increased an additional order of magnitude (Te-RHJ#4). This case results in a much higher electrical doping level at the beginning of the absorber which eventually converges to the same value of Te-RHJ#2 and Te-RHJ#3 by around the middle of the GaInP layer thickness. In Te-RHJ#1 there is no injection of Te during the phosphide layers, so the presence of Te in these layers is directly attributed to the memory effect of the Te injected during the growth of the GaAs contact layer. On the other hand, Te-RHJ#2, Te-RHJ#3 and Te-RHJ#4 sweep different Te preloads during the first nanometers of phosphides growth, apart from that already coming from de contact layer. The fact that the total amount of Te moles injected during the growth of the GaAs contact layer is always more than 10 times higher than the total Te injected in the AlInP/GaInP phase, but, at the same time, the doping profile changes abruptly when a phosphide Te preload flow is used (Te-RHJ#1, without Te phosphide preload, exhibits much lower average donor concentration than the others) suggests that the Te memory effect is much stronger in phosphide than arsenide layers. This is in accordance with the SIMS profile presented in Fig. 1, which shows a rapid decline in [Te] during the growth of the GaAs contact layer as soon as the Te injection is shut-off, but [Te] spikes back up and then slowly decreases during the phosphide layers growth. 9 Figure 4. EL and cross-sectional CL along the GaInP absorber depth for samples Te-RHJ#2 (top) and Te-RHJ#4 (bottom). The depths in the legend for CL scans are measured from the AlInP/GaInP interface. On another note, the Te memory effect is expected to give rise to gradual properties along the GaInP absorber layer depending on its initial injection, as it occurs in the doping profile. Since the concentration of Te on the growth surface presumably changes as it is removed from the growth chamber as well as it is being incorporated into the bulk, it might lead to a reduction on its surfactant activity, affecting the bandgap of the GaInP material grown. To further investigate a possible bandgap grading, normalized plan-view EL and cross-sectional spatially resolved CL emission spectra of Te-RHJ#2 and Te-RHJ#4 are compared in Fig. 4. The samples are chosen to represent the extreme cases of Te phosphide preload explored in this study. In EL and cross-sectional CL techniques, the samples are excited using two different approaches: in EL, current is injected through the electrical contacts of the fabricated solar cell devices, so the emitted light corresponds to the fraction of the total current injected into the device which 10 recombines radiatively across the whole volume of the absorber layer. On the contrary, in CL the sample is excited by a 5 kV e-beam and the spectra are obtained by the emission in a locally excited volume, with a lateral full-with at half-maximum (FWHM) less than 20 nm according to simulations. Therefore, these locally emitted spectra allow to spatially resolve the material bandgap across the GaInP absorber layer as a function of depth. A first inspection reveals that the maximum in the EL spectra is located around 660 nm (1.87 eV) in both samples, regardless of the initial Te injected. Differences are found on the shape of the EL spectra, though: Te-RHJ#4, with a two orders-of-magnitude higher Te preload presents a significantly narrower band emission than Te-RHJ#2. CL spectra along the GaInP layers provide insight on this point. The shape and position of the different peaks remains unaltered along the whole GaInP absorber layer in Te-RHJ#4, whereas a progressive redshift along the layer is produced from 1.87 eV to 1.84 eV in Te-RHJ#2. Note that, if variations as high as ~ 30 meV in layers thicker than 200 nm were induced by variations of the composition, high angular separations above 500 arcsec should be visible in the XRD scans. Therefore, the observed gradual bandgap may be explained by a progressive increase in the ordering degree as the concentration of tellurium on the growth surface fades away. In contrast, in Te-RHJ#4, the preload is high enough to cause a strong and lasting memory effect that does not fade away fast enough during the growth of the GaInP absorber layer; so the effect on the ordering of the material and on its bandgap remains constant. Overall, surfactant properties of Te are proven through a dependence between the phosphide Te preload flows, the doping profile and a GaInP bandgap increase caused by reduction of the ordering degree. Taking into account the corrections for the slight deviations from the lattice-matched compositions, the bandgap shift goes from 1.831 up to 1.883 eV (~52 meV), pointing out Te as an electrically active impurity and a surfactant capable of partially disordering the material, presenting a heavy memory behavior in both cases. 3.2. Solar cells characterization The IQE measured are shown in Fig. 5. Te-RHJ solar cells present lower cut-off wavelengths than the benchmark samples, which employ Si and Zn as doping elements (Fig.5 top), due to the bandgap increase. The IQE response in Te-doped samples is improved in the whole wavelength range as the phosphide Te preload is reduced from 3·10-7 to 4·10-8 mol/min (from Te-RHJ#4 to Te-RHJ#3), reaching collection efficiencies similar to those obtained in Si- 11 RHJ, but does not improve further when the flow is lowered below this level: responses of Te-RHJ#3 and Te-RHJ#2 are virtually identical. All RHJ devices present slightly lower collection efficiencies as compared with Si-FJ, regardless of employing Te or Si in the thick emitter. The reason lies on a more demanding minority carrier diffusion length required to obtain the same IQE in RHJ designs than in FJ architectures [26], owing to the absorption profile generated in a GaInP layer, with most light absorbed within the first nanometers. Specifically, more than half of the total photons of wavelengths lower than 600 nm are absorbed in the first 180 nm corresponding to the emitter thickness of the Si-FJ. Since photogenerated carriers must reach the junction before being collected, the average distance to cover is significantly shorter in this configuration than in RHJs. Figure 5. Measured internal quantum efficiencies (IQE) of tellurium-based rear-heterojunctions (Te-RHJ), traditional front- junction (Si-FJ) and silicon-based rear-heterojunctions (Si-RHJ). In order to provide further insight on the dependence between the junction position and the collection efficiency, Fig.6 presents the modelled IQE of both configurations -- FJ and RHJ -- using the Hovel method [27] and the optical data used corresponding to our measured disordered-GaInP material [28]. To strictly focus on the junction position, the total thickness of GaInP is always 850 nm and the minority carrier properties -- diffusion length (Lm) and lifetime (τm) -- are kept constant for both n and p-type GaInP. These parameters are extracted from the fit of Lm to the measured IQE of Te-RHJ#2, assuming uniform properties in the absorber layer (which is not exactly the case in our gradual emitter cells but does not affect the purpose and conclusions of this modeling) with a fixed τp = 1 ns [29][30] 12 and a front surface recombination in the AlInP/GaInP interface Sp = 100 cm/s [31]. Besides, since almost all photons have already been absorbed in the emitter, the absorption in the AlGaInP base is negligible and it does not contribute significantly to the IQE in the modeling. Finally, the rear recombination velocity (Sn) in the base of the FJ, accounting for recombination in the GaInP/AlGaInP interface, is set to 105 cm/s [31]. On the other hand, the GaInP/AlGaInP interface in the RHJ configuration is located inside the pn junction, where the action of the strong electric field sweeps the carriers across the interface, so this interface recombination is neglected. All parameters are summarized in Table II, where the suffix p refers to minority hole properties in the n-doped layer -- emitter -- and the suffix n refers to minority electron properties in the p-doped layer -- base. Table II. Parameters used in the Hovel modelling of both FJ and RHJ configuration. RHJ FJ Emitter/base GaInP/AlGaInP GaInP/GaInP xemitter/xbase (nm) 850/250 180/670 Lp/Ln (nm) τp/τn (ns) ND/ NA (cm-3) Sp/Sn(cm/s) 1500/0.1 1500/1500 1/1 1/1 5·1017/1·1018 Variable/107 1·1018/1·1017 Variable/105 Figure 6. Modeled IQE of both front-junction and rear-heterojunction configurations. Recombination parameters are taken from the fit to the experimental response of Te-RHJ#2. Situations corresponding to a low (100 cm/s) and a high (2.5·105 cm/s) front surface recombination velocity are compared. 13 Therefore, the modeling results shown in Fig. 6 compare the experimental IQE corresponding to a RHJ design and the modeled IQE of a FJ design with the same parameters. In line with previous modeling work by Lumb et al. [26], Fig. 6 reveals a more favorable carrier collection in FJ than in RHJ designs, in the low Sp case (100 cm/s), with peak values of 0.98 (instead of 0.88) and a 11% higher Jsc (15.29 mA/cm2 vs 13.73 mA/cm2). Additionally, differences between collection efficiencies in both configurations become more pronounced at high Sp (2.5·105 cm/s): in a thicker emitter the carriers have a higher probability of reaching and interacting with the front window-emitter interface before being collected at the junction. Therefore, a higher density of impurities, defects or lower local lifetimes due to high doping levels in the vicinity of this interface -- accounted for by a high Sp -- could explain the deterioration of IQE in Te-RHJ#4, where a high flow of Te is directly injected during the growth of the window and the immediate subsequent 25 nm of GaInP. Light and dark I-V curves measured on the solar cell devices under study are shown in Fig. 7. In Table III, the electrical parameters extracted from these curves, and Van der Pauw measurements for the emitter sheet resistance, are summarized. RHJ devices present lower Jsc, but at the same time, result in significantly better Voc and Woc in comparison with the traditional Si-FJ. Focusing first on the Jsc, two different contributions to the lower current can be differentiated in Te-RHJ samples, that can be understood with the discussing of the IQE presented above: the pn junction position, with a direct impact on the collection efficiency, and the bandgap increase, which reduces the total photons absorbed. On the one hand, differences of 0.35 mA/cm2 in the Jsc (14.98 mA/cm2 vs 14.63 mA/cm2) between Si-FJ and Si-RHJ, with very similar bandgaps, can be explained by the rear-junction position itself. On the other hand, the drop of 0.97 mA/cm2 in the best Te-RHJ with respect to Si-RHJ (14.63 mA/cm2 vs 13.66 mA/cm2), with similar collection efficiencies but different bandgaps, can be attributed to bandgap variations. In this case, the impact of the bandgap (6.6%) is clearly more important than the change in the junction position (2.3 %). Nonetheless, the total thickness of Te-RHJ devices is still not optimized in the proof-of-concept solar cells presented in this work and a tradeoff between the carrier collection and the absorption arises from the emitter thickness in RHJs. While a thickness reduction leads to a lower photoabsorption, it may result beneficial for the overall Jsc, since it reduces the effective distance required to collect photogenerated carriers, enhancing the collection efficiency. In 14 fact, preliminary modelling, not shown for brevity, reveals a Jsc increase up to 14.07 mA/cm2 in Te-RHJ#2 by simply thinning the emitter down to 650 nm. Figure 7. Light I-V (top) and dark I-V (bottom) curves of tellurium-based rear-heterojunctions (Te-RHJ), traditional front-junction thin- emitter (Si-FJ) and silicon-based rear-heterojunctions (Si-RHJ). In a similar approach, two additive contributions to the Voc gain observed for Te-RHJ samples can be distinguished: the junction configuration and the bandgap shift. On the one hand, the Voc in Si-RHJ is 91 mV higher than in Si-FJ (~6.9%), with similar bandgaps. On the other hand, among all the RHJ samples, Te-RHJ#3 exhibits the highest Voc, 1.422 V (followed very closely by Te-RHJ#2 with 1.418 mV), representing an additional 18 mV to the Si-RHJ voltage (~1.3%). This difference is exclusively attributed to the higher bandgap achieved by a higher disorder. Naturally, the aggregate Voc increase becomes more pronounced when comparing the best Te-RHJ to the traditional 15 Si-FJ (1.422 vs 1.313V). In contrast to the case of the Jsc, the junction configuration is more influential than the bandgap increase on the recombination current and Voc. In fact, the lower Woc in Si-RHJ than in Te-RHJ reflects this idea. Table III. Electrical parameters of the different GaInP solar cells studied. The short-circuit current has been calculated from the IQE curve using the AM1.5D G173 direct spectra. Structure Te-RHJ#2 Te-RHJ#3 Te-RHJ#4 Si-FJ Si-RHJ fDETe preload (mol/min) 5·10-9 4·10-8 3·10-7 - - Jsc (mA/cm2) Voc (V) Eg (eV) Woc (V) Rshe (Ω/) FF 13.66 1.418 1.873 0.460 147 0.87 13.47 1.422 1.871 0.464 152 0.87 8.63 1.085 1.874 0.858 127 0.76 14.98 1.313 1.838 0.539 551 0.85 14.63 1.404 1.841 0.448 320 0.87 Since many cross-related parameters are modified at the same time -- doping levels, type of minority carriers in the absorber, bandgap or the use of AlGaInP in the junction -- the use of the external luminescence efficiency, ηext, as a figure of merit to compare the different solar cells is highly convenient [32][33][34]. This parameter accounts for the portion of the total recombination current (equal to the injected current in the dark, Jinj) which is radiative (J0rad/Jinj) and determines how close the device is to the radiative limit [35]. In Fig.8, ηext is represented, extracted from EL measurements at different Jinj of Te-RHJ#2, Si-RHJ and Si-FJ samples. 16 Figure 8. Measured external radiative efficiency of three representative samples: tellurium-based rear-heterojunction (Te-RHJ#2), traditional front-junction (Si-FJ) and silicon-based rear-heterojunction (Si-RHJ). A similar tendency as in [14] is observed in our samples: all RHJs have an order-of-magnitude higher radiative efficiencies than the traditional Si-FJ at current density values equivalent to ~1 sun, which explains the lower recombination currents shown in the dark I-V curves, and the lower Woc. Such improvement may be originated by different factors. In [14] and [36] the authors coincide in pointing out a reduction of non-radiative Sah-Noyce-Shockley (SNS) recombination (J0m) in the depletion region [37], as the main reason of the recombination decrease and Voc increase in a RHJ device. Reduction of SNS recombination is achieved by thinning the depletion region through the introduction of a high bandgap material in the junction (AlGaInP). However, J0m should stop dominating at high current densities because of the higher ideality factor (n ~ 2) than the bulk recombination current (J01), with (n ~ 1). Therefore, the higher ηext of RHJ at high current densities suggests that other factors may be contributing to lowering non-radiative recombination, an issue which is still under investigation. In Fig. 8, it can also be observed that the Si-RHJ sample has a higher ηext than the Te-RHJ, which is in accordance with the Woc obtained and indicates that the overall electronic quality of the Te-RHJ cells under development has room for improvement. Anyway, this lower ηext is overcome by a higher bandgap, leading to a higher Voc in Te-RHJ devices, as shown above. 17 3.3. Concentration performance Achieving a very low front metal contact resistance, enabled by the use of Te as dopant, is of particular importance for concentrator applications. Additionally, in the Te-RHJ solar cells developed, a considerable decrease in the emitter sheet resistance was also obtained, from 551 Ω/ in Si-FJ to 147 Ω/ in Te-RHJ#2. This has important implications in the design and performance of the solar cell. On the one hand, it can be used to reduce the front grid shadowing factor and achieve a higher Jsc. On the other hand, it can be used to improve the performance at higher concentrations. To assess the impact of these improvements, combined with the lower Jsc and higher Voc obtained, on the performance of the GaInP cell developed, we have carried out concentration response measurements on the traditional cell with thin emitter (Si-FJ) and the gradual RHJ cell presented in this work (Te-RHJ#2). To aid in the analysis, we have modelled the concentration response as well. For this we have used our proven model based on distributed circuit units [38] [39] [40] with the measured short circuit currents, recombination currents, ideality factors and emitter sheet resistances as experimental input parameters (see Table III and Fig. 7). The solar cells simulated reproduce the size and geometry of the experimental cells developed: 0.1cm2 active area with an inverted square front grid geometry and 4 µm wide fingers, similar to our typical concentrator solar cell design [41][42]. The metal and contact parameters used correspond to our state-of-the-art metallization for inverted solar cells, which relies on a high doping level in the contact layer achieved using tellurium [18], and were confirmed using TLM and Hall van der Pauw measurements. The results of the simulations and measurements are shown in Fig. 9. Note that the concentration in the X-axis refers to times the 1-sun Jsc of each cell measured. 18 Figure 9. Symbols: concentration measurement results for Si-FJ and Te-RHJ#2 GaInP cells studied. The values shown are the average of a set of measurement, and the error bars represent the standard deviation in these (note that horizontal error bars are present too but difficult to distinguish). Solid lines: fit to these measured concentration responses. Dashed lines: modeled concentration response obtained using the same fitting parameters and a lower back contact resistance in the inverted solar cells. Distributed modeling based on electronic circuit units is used with the experimental parameters obtained (Table III and Fig. 7) and the front grid parameters of our state-of-the-art metallization process, as input data. The concentration response of the Voc shows the expected logarithmic behavior, with a slightly different slope for the two cells due to the different ideality factors observed also in the dark I-V curves (Fig. 7). The model agrees very well with the experimental data points, as can be seen, and shows that the Voc gain obtained with the gradual emitter design decreases only slightly with concentration, consistently with the small difference in ideality factors. The FF results are clearly better under concentration for the case of the RHJ design, as expected. In these cells, the 19 FF peaks at around 200 suns and then starts a fast decrease, despite the front grid is optimized for higher concentrations. This is caused by a high series resistance originated at the back of the prototype inverted solar cells implemented, which have a thin back contact metal layer and are glued to a silicon handle by means of a non- conductive epoxy (see Fig 2). The dashed lines in Fig. 9 correspond to simulations carried out using the same model parameters but a design of the cell where there is no epoxy at the back. This case shows a better FF response under concentration, peaking at higher concentrations. Finally, the output power measurement allows to assess the combined effect of Jsc, Voc and FF. Note that the active area of the solar cells measured are virtually identical, so the direct comparison of output power is appropriate. It can be seen that a significantly higher power is obtained with the RHJ design. The advantage is higher at higher concentrations. Therefore, we can conclude that the lower Jsc obtained in the Te-based RHJ design is compensated for by the higher Voc and FF, achieving higher efficiencies at 1-sun and under concentration. The results presented here are intended to be understood as proof of concept, with clear room for improvement, particularly in the case of the Jsc of the solar cells. The applicability of these GaInP top cells to enhance the efficiency of multijunction solar cells will require improving the carrier collection efficiency and Jsc, at least for series connected subcell devices. As standalone solar cells, they could already exhibit better performances than the traditional design in applications such as power harvesters for the Internet of Things (IoT) [43], multi-terminal mechanically stacked cells [44], or recently developed 3-terminal heterojunction bipolar transistor cells [45]. The growth simplicity brought about by the use of just one n-type dopant in the Te-RHJ design can be an interesting advantage too. Nevertheless, realizing the potential improvements in the carrier collection efficiency discussed will also be of benefit to all these applications. 4. Conclusions We have demonstrated a method to grow an inverted rear-heterojunction GaInP solar cell with an absorber doping profile which relies exclusively on the memory effect of Te coming from the heavily doped front contact layer. This way, a low front metal contact resistance can be achieved while using to our advantage the otherwise detrimental memory effect of Te. This strategy requires the understanding of the incorporation of Te in the different III-V layers 20 during the epitaxial growth and takes advantage of its properties as surfactant, which allows to reduce the GaInP CuPt ordering thus increasing its bandgap. This fact together with the use of a RHJ architecture results in an important Voc and Woc enhancement in comparison with the traditional thin-emitter Si-FJ design. The results have been analyzed through the comparison of the QE and I-V curves of a Te-RHJ, Si-RHJ and a thin-emitter Si-FJ. In addition, this approach also gives rise to a notable reduction in the emitter sheet resistance, which enables reducing the front grid shadowing factor for an increased Jsc and/or a better concentration response. The RHJ solar cells developed so far exhibit a slight decrease in the collection efficiency and Jsc, which can be improved by a redesign of the emitter thickness. We have shown that, overall, the RHJ solar cells developed can achieve an improved conversion efficiency and enhanced concentration response when processed as concentrator solar cells. Ongoing work pursues further improvements by redesigning the gradual doping profile. Acknowledgments This project has been funded by the Spanish MINECO with the project TEC2017-83447-P, by the Comunidad de Madrid with the project with reference Y2018/EMT-4892 (TEFLÓN-CM) and by Universidad Politécnica de Madrid by Programa Propio. M. Hinojosa is funded by the Spanish MECD through a FPU grant (FPU-15/03436) and I. García is funded by the Spanish Programa Estatal de Promoción del Talento y su Empleabilidad through a Ramón y Cajal grant (RYC-2014-15621). The authors want to thank Norman R. Jost for helping with the electroluminescence measurements and Shabnam Dadgostar and the Optronlab group for their technical support with the cathodoluminescence measurements. References [1] F. 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1809.03560	2	1809	2019-12-12T11:33:24	Surface Coil Winding Profile for Obtaining a Uniform Magnetic Field inside a Spheroidal Body	[ "physics.app-ph", "physics.class-ph" ]	Uniform magnetic field generation is one of the key issues in many physical applications; such as magnetic resonance imaging, magnetic probs etc. There are many ways to obtain highly homogeneous fields. For instance, ellipsoidal bodies - and in special, spheroids - naturally maintain uniform magnetic field inside their bodies, without any need for shimming. Thanks to their rotational symmetry in addition, spheroids are easier to produce and handle, and therefore deserve more emphasis. However, creating a uniform magnetic field inside a spheroid is only possible via maintaining certain current profiles on its surface. In this paper we have derived exact surface coil winding profiles for both prolate and oblate spheroids by reorganizing state of the art derivations in the literature and correcting them whenever necessary.	physics.app-ph	physics	Surface Coil Winding Profile for Obtaining a Uniform Magnetic Field inside a Spheroidal Body1 Yavuz Öztürka, Alican Aktaşb and Bekir Aktaşb a University of Cambridge, Department of Engineering, Electrical Engineering Division, 9 JJ Thomson Avenue, CB3 0FA, Cambridge, UK. b Magnomech Ltd., KOSGEB, Cayirova, 41420, Kocaeli, Türkiye. Corresponding Author: [email protected] Abstract Uniform magnetic field generation is one of the key issues in many physical applications; such as magnetic resonance imaging, magnetic probs etc. There are many ways to obtain highly homogeneous fields. For instance, ellipsoidal bodies - and in special, spheroids - naturally maintain uniform magnetic field inside their bodies, without any need for shimming. Thanks to their rotational symmetry in addition, spheroids are easier to produce and handle, and therefore deserve more emphasis. However, creating a uniform magnetic field inside a spheroid is only possible via maintaining certain current profiles on its surface. In this paper we have derived exact surface coil winding profiles for both prolate and oblate spheroids by reorganizing state of the art derivations in the literature and correcting them whenever necessary. 1. Introduction Ellipsoidal structures have been known to produce uniform magnetic fields inside, since the time of Maxwell. For instance, Marsh [1] and Blewett [2] showed that magnetic field uniformity can be attained by maintaining a constant ampere per turn ratio along the principal 1 Originally this article was meant to be a Comment to Ref [17]. However, the editor of the journal AEÜ is not convinced to publish it because of out of scope concerns. 1 axis, that is, by winding a coil of constant pitch along the major axis. For instance, in the case of z being the major axis, this corresponds to a constant z displacement in each complete turn. Thus, the winding function must be a linear function of z. This fact is well used in both theoretical and experimental studies in the literature for the case of spheroidal [1 -- 7] in general, as well as for spherical structures [8 -- 16]. Živaljevič and Aleksič [17] made a derivation based on Maxwell's equations to show that certain surface currents on a spheroidal structure can generate uniform internal magnetic fields. However, they concluded in an incorrect surface winding profile (surface coil) to produce that desired surface currents. Therefore, we have rederived the winding function by using Maxwell's equations following the similar derivation procedure throughout all steps they followed. And we have noticed that they misinterpreted the surface winding profile and claimed a direct proportionality between the winding profile and the surface current density. Here we show the correct winding profile. 2. Derivations The derivations of the surface current on spheroids (namely prolate or oblate ellipsoids) start with the assumption that electric and magnetic fields take the following forms in the low frequency regime [17]: 𝑬(𝑢, 𝑣) = 𝐸𝑤(𝑢, 𝑣)𝒘 𝑯(𝑢, 𝑣) = 𝐻𝑢(𝑢, 𝑣) 𝒖 + 𝐻𝑣(𝑢, 𝑣)𝒗 (1) (2) where 𝒖, 𝒗, 𝒘 are unit spheroidal coordinate vectors. Making use of the absence of charges inside and outside the spheroid, one can employ a scalar magnetic potential which obeys the Laplace equation in prolate (oblate) spheroidal coordinates. 2 2.1. Prolate Spheroidal Case Figure 1. Prolate Spheroidal Coordinates Solving the Laplace equation in prolate spheroidal coordinates (See Figure 1) one can obtain the following expression in Eq. (3) [17]. 𝑯(𝑢, 𝑣) = 𝑗𝑠 ( 𝑠𝑖𝑛ℎ2𝑢𝑜 2 𝑙𝑛 𝑐𝑜𝑠ℎ𝑢0 + 1 𝑐𝑜𝑠ℎ𝑢0 − 1 − 𝑐𝑜𝑠ℎ𝑢0) × (𝑐𝑜𝑡𝑣 𝑠𝑖𝑛ℎ𝑢 𝒖 − 𝑐𝑜𝑠ℎ𝑢 𝒗) (3) for the magnetic field inside. The relations between prolate spheroidal and Cartesian coordinates are given as follows [18]: 𝑥 = √𝑎2 − 𝑏2 𝑠𝑖𝑛ℎ𝑢 𝑠𝑖𝑛𝑣 𝑐𝑜𝑠𝑤 𝑦 = √𝑎2 − 𝑏2 𝑠𝑖𝑛ℎ𝑢 𝑠𝑖𝑛𝑣 𝑠𝑖𝑛𝑤 (4) 𝑧 = √𝑎2 − 𝑏2 𝑐𝑜𝑠ℎ𝑢 𝑐𝑜𝑠𝑣 3 where 𝑎 and 𝑏 represent the spheroidal dimensions (Figure 1). Here with the use of these relations in Eq. (4), prolate spheroidal unit vectors 𝒖, 𝒗, 𝒘 can be expressed in Cartesian unit vectors 𝒙, 𝒚, 𝒛 as follows: 𝒖 = 𝒗 = √𝑎2 − 𝑏2 ℎ √𝑎2 − 𝑏2 ℎ ( 𝑐𝑜𝑠ℎ𝑢 𝑠𝑖𝑛𝑣 𝑐𝑜𝑠𝑤 𝒙 + 𝑐𝑜𝑠ℎ𝑢 𝑠𝑖𝑛𝑣 𝑠𝑖𝑛𝑤 𝒚 + 𝑠𝑖𝑛ℎ𝑢 𝑐𝑜𝑠𝑣 𝒛 ) ( 𝑠𝑖𝑛ℎ𝑢 𝑐𝑜𝑠𝑣 𝑐𝑜𝑠𝑤 𝒙 + 𝑠𝑖𝑛ℎ𝑢 𝑐𝑜𝑠𝑣 𝑠𝑖𝑛𝑤 𝒚 + 𝑐𝑜𝑠ℎ𝑢 𝑠𝑖𝑛𝑣 𝒛 ) (5) 𝒘 = −𝑠𝑖𝑛𝑤 𝒙 + 𝑐𝑜𝑠𝑤 𝒚 We rewrite the result of Živaljevič and Aleksič [17] for the magnetic field: 𝑯 = − 𝐶1 √𝑎2 − 𝑏2 𝒛 for C1 being: 𝐶1 = −𝑗𝑠 ℎ 𝑠𝑖𝑛𝑣 ( 𝑠𝑖𝑛ℎ2𝑢𝑜 2 𝑙𝑛 𝑐𝑜𝑠ℎ𝑢0 + 1 𝑐𝑜𝑠ℎ𝑢0 − 1 − 𝑐𝑜𝑠ℎ𝑢0) where ℎ is the Lame coefficient for the prolate spheroidal coordinates defined as ℎ = √𝑎2 − 𝑏2(𝑠𝑖𝑛ℎ2𝑢 + 𝑠𝑖𝑛2𝑣)1 2⁄ (6) (7) (8) Obviously, in order to obtain a constant magnetic field in Eq. (6) aligned along the z axis, 𝐶1 has to be a constant. That is, in Eq. (7) 𝑗𝑠 must have the form: 𝑗𝑠 ∝ 𝑠𝑖𝑛𝑣/ℎ for this to happen since the terms under the bracket are constants on the spheroidal surface. Introducing a proportionality constant parameter (𝑗0) and using the definition of h, the surface current density can be more properly expressed as follows [17]: 𝑗𝑠 = 𝑗0𝑠𝑖𝑛𝑣 ℎ = 𝑗0𝑠𝑖𝑛𝑣 √𝑎2 − 𝑏2(𝑠𝑖𝑛ℎ2𝑢 + 𝑠𝑖𝑛2𝑣)1 2⁄ (9) 4 Using Eq. (9) Živaljevič and Aleksič supposed the winding function (𝑁′) for a prolate spheroidal surface to have the same behavior, namely they expected an incorrect expression for 𝑁′: 𝑁′ = 𝑁0𝑠𝑖𝑛𝑣 (𝑠𝑖𝑛ℎ2𝑢 + 𝑠𝑖𝑛2𝑣)1 2⁄ (10) where 𝑁0 is indicating total number of turns of the coil. In fact their assumption contradicts with the previous studies [1 -- 16] as well. All of these studies emphasized the constant ampere per turn ratio along the principal axis to be obeyed; in order a uniform magnetic field inside to be realized. This wrong conclusion in Eq. (10) can be corrected as follows. By referring to the time-invariant equation of continuity (𝛁 ∙ 𝐣 = 0) on a closed surface, 𝐣 can be represented by curl of a scalar quantity 𝜙 (a differentiable current function) [1], 𝐣 = 𝛁 × 𝜙𝒏 (11) here 𝜙𝒏 is a vector off the surface where 𝒏 is the unit normal. Since 𝐣 = 𝛁 × 𝜙𝒏 = 𝛁𝜙 × 𝒏 + 𝜙𝛁 × 𝒏 , in which the second term vanishes for a closed surface, the surface current can be written as: 𝐣 = 𝛁𝜙 × 𝒏 (12) Marsh showed that, adopting a linear current function (𝜙 = −𝐾𝑧, where K is the proportionality constant) with respect to an axis of an arbitrary ellipsoid can provide a uniform magnetic field aligned with the same axis. He consequently showed that for the case of a spheroid, this corresponds to a constant ampere per turn ratio and thus a constant pitch solenoidal coil winding [1]. If we restate Eq. (12) in spheroidal coordinates we obtain: 5 𝐣 = 𝒖 × 𝒏 ℎ𝑢 𝜕𝜙 𝜕𝑢 + 𝒗 × 𝒏 ℎ𝑣 𝜕𝜙 𝜕𝑣 + 𝒘 × 𝒏 ℎ𝑤 𝜕𝜙 𝜕𝑤 (13) where ℎ𝑢 = ℎ𝑣 = ℎ and ℎ𝑤 = √𝑎2 − 𝑏2𝑠𝑖𝑛ℎ𝑢 𝑠𝑖𝑛𝑣. Since 𝒖 is the surface normal on a spheroidal surface, 𝒏's can be replaced by 𝒖's. The first term cancels out directly. The last term will also be discarded since 𝜙 has rotational symmetry with respect to 𝑤. Thus, combining the Eqs. (9) and (13), with the help of the relations in Eqs. (5) the surface current density takes the form retaining only the 𝒘 components on both sides: 𝑗𝑠 = 𝑗0𝑠𝑖𝑛𝑣 ℎ = − 1 ℎ 𝜕𝜙 𝜕𝑣 where the fact that 𝒗 × 𝒖 = −𝒘 , is taken into account. Integrating both sides, we have: 𝑧 𝑧 𝑗0 ∫ 𝑠𝑖𝑛𝑣𝑑𝑣 = − ∫ 𝑑𝜙 𝑧=0 𝑧=0 𝑣 𝑗0 ∫ 𝑠𝑖𝑛𝑣𝑑𝑣 = 𝑗0𝑐𝑜𝑠𝑣 = −(𝜙(𝑧) − 𝜙(0)) = −𝜙(𝑧) 𝜋/2 (14) (15) (16) Here 𝜙(0) is assumed to be zero as a reference potential. Since we are on a spheroidal surface, 𝑢 is a constant (𝑢 = 𝑢0). Inserting 𝑐𝑜𝑠𝑣 from Eq. (4) into Eq.(16), we can write: 𝑗0 𝑧 √𝑎2 − 𝑏2 𝑐𝑜𝑠ℎ𝑢0 = 𝑗0 𝑧 𝑎 = −𝜙(𝑧) (17) Defining a new constant 𝐾 = 𝑗0/𝑎 (current density with respect to z axis), Eq. (17) can be rewritten as: 𝜙 = −𝐾𝑧 (18) which is actually Marsh's linear current function [1]. Thus, starting from Eq. (9) we have arrived at Eq. (18) which rigorously confirms the constant ampere per turn ratio along the 6 principal axis of a spheroid or a sphere. On the other hand, Eq. (17) tells us that 𝜙 is the z integral of the current density, thus is equal to the winding function scaled by the coil current: 𝜙(𝑧) = 𝐼𝑁′(𝑧) (19) Furthermore, it should be remembered that the parameter 𝑗0 is the maximum current density which flows at the equator and can be defined in terms of total number of windings 𝑁0 as well, by adopting the method used by Haus and Melcher [14]. One should notice that the density of turns along z-axis is constant and equal to 𝑁0/2𝑎. Thus, the number of turns in an incremental length is (𝑁0/2𝑎)𝑑𝑧. Since in the prolate spheroidal coordinates the differential may be written as 𝑑𝑧 = −𝑎 𝑠𝑖𝑛𝑣 𝑑𝑣, the number of turns in the differential length ℎ𝑑𝑣 along the periphery is (𝑁0/2)(𝑠𝑖𝑛𝑣/ℎ). 𝐼 being the coil current, the surface current density is then obtained to be 𝑗𝑠 = 𝑁0𝐼 2 𝑠𝑖𝑛𝑣 ℎ (20) Comparing Eqs. (14) and (20) we see that the total number of windings 𝑁0, coil current I and maximum (equatorial) surface current density 𝑗0 are related via: 𝑗0 = 𝑁0𝐼 2 (21) Combining Eqs. (15), (19) and (21) we arrived at the corrected winding function for the spheroidal coordinates which is: 𝑁′ = 𝑁0 2 𝑐𝑜𝑠𝑣 (22) 7 2.1. Oblate Spheroidal Case Figure 2. Oblate Spheroidal Coordinates For the oblate spheroidal surface (see Figure 2) current density Živaljević and Aleksić [17] derived: 𝑗𝑠 = 𝑗0𝑐𝑜𝑠𝑣 ℎ = 𝑗0𝑐𝑜𝑠𝑣 √𝑎2 − 𝑏2(𝑠𝑖𝑛ℎ2𝑢 + 𝑠𝑖𝑛2𝑣)1 2⁄ (23) Similar to Eq. (10) they concluded the winding function to be: 𝑁′ = 𝑁0𝑐𝑜𝑠𝑣 (𝑠𝑖𝑛ℎ2𝑢 + 𝑠𝑖𝑛2𝑣)1 2⁄ Similarly using Eqs. (12), (13) and (23) we arrive at: 𝑗𝑠 = 𝑗0𝑐𝑜𝑠𝑣 ℎ = − 1 ℎ 𝜕𝜙 𝜕𝑣 Integrating both sides again: 𝑣 𝑗0 ∫ 𝑐𝑜𝑠𝑣𝑑𝑣 = 𝑗0𝑠𝑖𝑛𝑣 = −𝜙 0 (24) (25) (26) Relations between oblate spheroidal and Cartesian coordinates are as follows [17,18]: 8 𝑥 = 𝑐 𝑐𝑜𝑠ℎ𝑢 𝑐𝑜𝑠𝑣 𝑐𝑜𝑠𝑤 𝑦 = 𝑐 𝑐𝑜𝑠ℎ𝑢 𝑐𝑜𝑠𝑣 𝑠𝑖𝑛𝑤 𝑧 = 𝑐 𝑠𝑖𝑛ℎ𝑢 𝑠𝑖𝑛𝑣 (27) where 𝑎 and 𝑏 represent the spheroidal dimensions (Figure 2). Oblate spheroidal unit vectors 𝒖, 𝒗, 𝒘 can be expressed in terms of Cartesian unit vectors 𝒙, 𝒚, 𝒛 as follows: 𝒖 = 𝒗 = √𝑎2 − 𝑏2 ℎ √𝑎2 − 𝑏2 ℎ ( 𝑠𝑖𝑛ℎ𝑢 𝑐𝑜𝑠𝑣 𝑐𝑜𝑠𝑤 𝒙 + 𝑠𝑖𝑛ℎ𝑢 𝑐𝑜𝑠𝑣 𝑠𝑖𝑛𝑤 𝒚 + 𝑐𝑜𝑠ℎ𝑢 𝑠𝑖𝑛𝑣 𝒛 ) ( 𝑐𝑜𝑠ℎ𝑢 𝑠𝑖𝑛𝑣 𝑐𝑜𝑠𝑤 𝒙 + 𝑐𝑜𝑠ℎ𝑢 𝑠𝑖𝑛𝑣 𝑠𝑖𝑛𝑤 𝒚 + 𝑠𝑖𝑛ℎ𝑢 𝑐𝑜𝑠𝑣 𝒛 ) Using these we arrive at: 𝒘 = −𝑠𝑖𝑛𝑤 𝒙 + 𝑐𝑜𝑠𝑤 𝒚 𝑗0 𝑧 𝑐 𝑠𝑖𝑛ℎ𝑢0 = −𝜙 Similar to Eq. (17) and Eq. (18) we have: 𝜙 = −𝐾𝑧 Thus, one can infer that the winding function for the oblate case is: 𝑁′ = 𝑁0 2 𝑠𝑖𝑛𝑣 (28) (29) (30) (31) Note that 𝑁′ is proportional to 𝑠𝑖𝑛𝑣 for oblate instead of 𝑐𝑜𝑠𝑣 for prolate case. Considering the definition of coordinates for prolate and oblate cases (Figure 1 and Figure 2 respectively), these two equations (Eqs. (22) and (31)) exactly matches each other for spherical structure. As a conclusion: Starting from the Maxwell's equations for low frequency regime, we have rigorously derived the correct surface winding functions for prolate and oblate spheroidal closed surfaces for producing uniform magnetic fields therein. 9 3. References [1] G.E. Marsh, Uniform magnetic fields in deflection coil design and the problem of the ellipsoid, J. Appl. Phys. 46 (1975) 3178 -- 3181. doi:10.1063/1.321968. [2] J.P. Blewett, Magnetic field configurations due to air core coils, J. Appl. Phys. 18 (1947) 968 -- 976. doi:10.1063/1.1697582. [3] T. Sugihara, H. Matsui, K. Oohira, M. Higuchi, A Spheroidal Coil Homogeneous Magnetic Field β-Ray Spectrometer for Coincidence and Precision Spectroscopy, Sci. Rep. Hyogy Univ. Agric. 6 (1964) 1 -- 6. [4] M.S. Antony, J.P. Zirnheld, Uniform Magnetic Field due to Currents Through Air-Cored Ellipsoidal Coils, Jpn. J. Appl. Phys. 22 (1983) 205 -- 205. doi:10.1143/JJAP.22.205. [5] R. Hernandez, Ellipsoidal Coil for Magnetic Resonance Spectroscopy, AIP Conf. Proc. 682 (2003) 205 -- 210. doi:10.1063/1.1615123. [6] Y. Öztürk, B. Aktaş, Generation of uniform magnetic field using a spheroidal helical coil structure, J. Phys. Conf. Ser. 667 (2016) 012009. doi:10.1088/1742-6596/667/1/012009. [7] Y. Öztürk, B. Aktaş, Note: 3D printed spheroid for uniform magnetic field generation, Rev. Sci. Instrum. 87 (2016) 17 -- 20. doi:10.1063/1.4965035. [8] J.W. Clark, A New Method for Obtaining a Uniform Magnetic Field, Rev. Sci. Instrum. 9 (1938) 320. doi:10.1063/1.1752353. [9] T.W.H. Caffey, Fabricating a Spherical Coil, Rev. Sci. Instrum. 36 (1965) 103. doi:10.1063/1.1719304. [10] J.E. Everett, J.E. Osemeikhian, Spherical coils for uniform magnetic fields, J. Sci. Instrum. 43 (2002) 470 -- 474. doi:10.1088/0950-7671/43/7/311. [11] L.J. Laslett, An equivalent distribution of surface currents for the generation of a prescribed 10 static magnetic field within the enclosed volume, J. Appl. Phys. 37 (1966) 2361 -- 2363. doi:10.1063/1.1708818. [12] K. Kanazawa, T. Arikawa, Uniform Magnetic Field for Perfectron by Means of Spherical Air- Coil, JMSSJ On-Line. 30 (1982) 281 -- 287. [13] F. Primdahl, P.A. Jensen, Compact spherical coil for fluxgate magnetometer vector feedback, J. Phys. E. 15 (1982) 221 -- 226. doi:10.1088/0022-3735/15/2/015. [14] H.A. Haus, J.R. Melcher, Magnetoquasistatic Fields: Superposition Integral And Boundary Value Points of View, in: Electromagn. Fields Energy, Prentice-Hall, Englewood Cliffs, NY, 1989: pp. 29 -- 34. [15] M. Zahn, Uniform Magnetic Field Spherical Coil for MRI, US 8,093,896 B2, 2012. [16] N. Nouri, B. Plaster, Comparison of magnetic field uniformities for discretized and finite-sized standard cos θ, solenoidal, and spherical coils, Nucl. Instruments Methods Phys. Res. Sect. A Accel. Spectrometers, Detect. Assoc. Equip. 723 (2013) 30 -- 35. doi:10.1016/j.nima.2013.05.013. [17] S.R.A. Živaljevic, Dragana U., Generating homogeneous magnetostatic field inside prolate and oblate ellipsoidal coil, Int. J. Electron. Commun. 61 (2007) 637 -- 644. doi:10.1016/j.aeue.2006.10.001. [18] G. Arfken, Coordinate Systems, in: Math. Methods Phys., Academic Press, New York, 1970: pp. 103 -- 108. http://books.google.com.hk/books/about/Solitons.html?id=WEYsAAAAYAAJ&pgis=1. 11
1912.10876	1	1912	2019-12-13T14:13:21	Graphyne and Borophene as Nanoscopic Materials for Electronics	[ "physics.app-ph", "cond-mat.mes-hall" ]	Discussions based upon rigorous derivations show the validity range of the analogy between solid state materials like graphene which possess K symmetry crystallographic points in k-space, and the relativistic solutions for massive and low mass particles associated with the Dirac equation. Both eigenenergies and eigenvectors are examined for the nonrelativistic solutions of the Schrodinger equation using the tight-binding method, and the relativistic solutions of the Dirac equation. Implications for exploring new materials are drawn from the results. It is concluded Dirac materials are unlikely to fulfill the needs of transistor action materials, but two prime candidates which may satisfy those needs for 2D future electronics are proposed, graphyne and borophene.	physics.app-ph	physics	Graphyne and Borophene as Nanoscopic Materials for Electronics Electromagnetics Technology Branch, Electronics Science & Technology Division, Naval Research Laboratory, Washington, DC 20375 C. M. Krowne Abstract Discussions based upon rigorous derivations show the validity range of the analogy between solid state materials like graphene which possess K symmetry crystallographic points in k-space, and the relativistic solutions for massive and low mass particles associated with the Dirac equation. Both eigenenergies and eigenvectors are examined for the nonrelativistic solutions of the Schrodinger equation using the tight- binding method, and the relativistic solutions of the Dirac equation. Implications for exploring new materials are drawn from the results. It is concluded Dirac materials are unlikely to fulfill the needs of transistor action materials, but two prime candidates which may satisfy those needs for 2D future electronics are proposed, graphyne and borophene. Keywords: Monoatomic materials; Graphene; Schrodinger and Dirac equations; Tight- binding method; Eigenenergies and Eigenvectors Introduction It is worthwhile to assess what can be understood from the present day association of graphene with relativistic attributes. Our interest here originally arose out of studying the metal-insulator transition properties of graphene [1] and a nm scale ruthenium system [2]. Most widely known is the labeling of its particular K-space graphene symmetry points with the terminology Dirac. Electrons carrying the current for a graphene monoatomic sheet have very high mobility, and under an applied electric field, attain a very high velocity compared to more conventional semiconductors, whether monoatomic like Si and Ge, or compounds like GaAs and GaN, and many present day variants having three or more atomic constituents. The analogy between graphene like materials and the Dirac equation carries over to basically massless Dirac Fermions in the relativistic sense. This is because the transport in graphene, based on π-electrons from the carbon atoms, are very low mass compared to the atoms themselves. These issues are examined in the following treatment. First is addressed a formulation for electronic bandstructure which yields analytical results for 2D hexagonal materials. Second, from this are examined the eigenenergies, the Fermi velocities, and the relevant overlap and hopping integrals. Next attention is turned toward the graphene and relativistic QED type particles eigenvectors, namely their spinors in 2-spinor (third section) and 4-spinor forms (fourth section). Lastly, conclusions are drawn, and what could be the implications for other 2D materials in the near future. It is discovered that most likely non-Dirac properties for 2D materials may be most desirable for many transport electronic devices if switching action is 1 desirable, leading to the suggestion that materials development occur for graphyne and borophene. Formulation of the Bandstructure Equations in a Tractable Tight-Binding Format ℓsub Because there are two atom types in 2D hexagonal materials, corresponding to the two atom types within the unit cell Bravais lattice, the total electronic wavefunction must A(r) and ψk be the superposition of wavefunctions ψk lsub(r) ak lsubψk ∑ B(r) [3]. That is, A(r) + bkψk = akψk ψk(r) = B(r) (1) Index lsub is the sublattice atom index type, and can equal generally any number of atom types contained within the Bravais unit cell lattice. with Hamiltonian H(r), Only way to convert the spatially varying Schrodinger equation, H(r)ψk(r) = εkψk(r) ∇2 + V(r) H(r) = − (2) (3) !2 2me [V(r) is the total scalar potential energy at a point r that the electron experiences in the periodic lattice consisting of the atoms, each atom made up of its electrons and its positive atomic core] into a form which can be numerically evaluated, is to eliminate the vector spatial variable r by integrating it out. By (1), total wavefunction consists as the sum over the sublattice atoms. For carbon, that is two types labeled A and B. Equation (1) in vector form appears as ψk(r) = ψk A(r) ψk B(r) ⎡ ⎣⎢ ⎡ ⎤ ⎢ ⎦⎥ ⎢ ⎣ ak bk ⎤ ⎥ ⎥ ⎦ (4) ]† = ψk A(r) ψk B(r) ⎧ ⎪ ⎡ ⎨ ⎣⎢ ⎩⎪ ak bk ⎡ ⎤ ⎢ ⎦⎥ ⎢ ⎣ † ⎫ ⎤ ⎪ ⎥ ⎬ ⎥ ⎭⎪ ⎦ = ak bk ⎡ ⎢ ⎢ ⎣ † ⎤ ⎥ ⎥ ⎦ ⎡ ⎣⎢ A(r) ψk ψk B(r) † (5a) ⎤ ⎦⎥ Its Hermitian conjugate is †(r) = ψk(r) ψk [ or †(r) = ψk(r) ψk [ ⎡ ]† = ⎣⎢ ak( )* bk( )* ⎡ ⎢ ⎤ ⎢ ⎦⎥ ⎢ ⎣ * A(r) } * B(r) } { ψk { ψk ⎤ ⎥ = ak * ⎥ ⎥ ⎦ ⎡ ⎣⎢ Multiplying the Schrodinger equation from the left by ψk Integrating over two dimensional space for our 2D crystalline system, †(r)ψk(r) ∫∫ †(r) and ψk(r) from (4) and (5b) into (7), Substitute in ψk A (r) H ψk ⎡ B (r) ⎣⎢ †(r)H(r)ψk(r) = εkψk ψk †(r)H(r)ψk(r) d2rψk †(r)ψk(r) d2rψk = εk A (r) B (r) A(r) ψk d2r ak * d2r ak * ∫∫ B(r) ak bk bk * bk * ∫∫ ⎡ ⎣⎢ ⎡ ⎣⎢ ψk ψk ψk ψk ⎤ = εk ⎥ ⎥ ⎦ ⎡ ⎤ ⎢ ⎦⎥ ⎢ ⎣ ⎡ ⎤ ⎢ ⎦⎥ ⎢ ⎣ ⎡ ⎤ ⎢ ⎦⎥ ⎢ ⎣ ⎤ ⎥ ⎥ ⎦ bk * ⎡ ⎤ ⎢ ⎦⎥ ⎢ ⎣ ψk ψk A (r) B (r) †(r) , (2) becomes ⎤ ⎥ ⎥ ⎦ (5b) (6) (7) A(r) ψk ψk B(r) (8) ak bk ⎡ ⎤ ⎢ ⎦⎥ ⎢ ⎣ ⎤ ⎥ ⎥ ⎦ ⎤ ⎡ ⎥ ⎣⎢ ⎥ ⎦ ∫∫ 2 Knowing that quantum mechanically the Hamiltonian H operator is scalar here, performing outer products, allows identification of two matrix operators, Hk(r) = ψk ψk A(r) ψk A(r) ψk ⎦⎥ = ψk A(r) ψk (9a) B(r) ⎤ ⎡ ⎢ ⎢ ⎣ A (r)H(r)ψk B (r)H(r)ψk ψk ⎦⎥ = ψk A (r)ψk B (r)ψk ψk ⎤ A (r)H(r)ψk B (r)H(r)ψk A (r)ψk B (r)ψk B(r) B(r) B(r) B(r) A(r) ψk A(r) ψk ⎡ ⎢ ⎢ ⎣ ⎤ ⎥ ⎥ ⎦ ⎤ ⎥ ⎥ ⎦ (9b) ⎡ ⎤ ⎢ ⎥ ⎢ ⎥ ⎣ ⎦ Sk(r) = ψk ψk A (r) B (r) ⎡ ⎢ ⎢ ⎣ H ψk ⎡ ⎣⎢ A (r) B (r) ⎤ ⎡ ⎥ ⎣⎢ ⎥ ⎦ A(r) ψk ψk B(r) Equations (9) represent the Hamiltonian tested by the A and B atom total wavefunctions Hk(r) , and the same and mixed products of the total A and B atom wavefunctions Sk(r) (self matrix of the sublattice wavefunctions). Notice that the second equation of (9) can be obtained from the first by formally letting H → 1. Now integral equation (8) can be written compactly as d2r ak * d2r ak * (10) bk * bk * ⎤ ⎦⎥Hk(r) ak bk ⎡ ⎢ ⎢ ⎣ ⎤ = εk ⎥ ⎥ ⎦ ∫∫ ⎡ ⎣⎢ ⎤ ⎦⎥Sk(r) ak bk ⎡ ⎢ ⎢ ⎣ ⎤ ⎥ ⎥ ⎦ ∫∫ ⎡ ⎣⎢ Matrix operations and integration order can be switched in (10), so the double integral can be pulled past the coefficient row or column vectors. ak * (11) ak * ak bk ⎤ = εk ⎥ ⎥ ⎦ ⎡ d2rHk(r) } ⎢ ⎢ ⎣ ⎡ ⎣⎢ ⎡ ⎣⎢ bk * bk * ⎤ ∫∫{ ⎦⎥ ⎤ ∫∫{ ⎦⎥ The integrated out Hamiltonian and self matrices, are identified as d2rSk(r) Hk = Inserting (9) into (12) gives d2rHk(r) d2rHk(r) ; Sk = A(r) ψk Hk = ∫∫ ∫∫ B(r) ∫∫ A (r) B (r) (12) ⎤ ⎦⎥ ⎡ d2rSk(r) } ⎢ ⎢ ⎣ ak bk ⎤ ⎥ ⎥ ⎦ Collecting terms on the left-hand-side, 3 d2rψk d2rψk ∫∫ ∫∫ ⎡ = ⎢ ⎢ ⎢ ⎣ d2rSk(r) Sk = ∫∫ = ⎡ = ⎢ ⎢ ⎢ ⎣ d2rψk d2rψk A (r)ψk B (r)ψk ∫∫ ∫∫ so that (11) can be rewritten as bk * ak * ⎡ ⎣⎢ ∫∫ = ⎡ d2r ψk ⎢ ⎢ ψk ⎣ A(r) A (r)H(r)ψk B (r)H(r)ψk A(r) A (r) B (r) d2r ψk ψk ∫∫ ⎡ ⎢ ⎢ ⎣ A(r) A(r) ⎤ ⎡ ⎥ ⎣⎢ ⎥ ⎦ d2rψk d2rψk ∫∫ ∫∫ H ψk ⎡ ⎣⎢ ⎤ ⎥ ⎥ ⎦ d2rψk ∫∫ d2rψk ∫∫ A (r)H(r)ψk B (r)H(r)ψk B(r) B(r) A(r) ψk ψk B(r) A (r)ψk B (r)ψk B(r) B(r) ⎤ ⎥ ⎥ ⎥ ⎦ ⎤ ⎦⎥ ⎤ ⎦⎥Hk ak bk ⎡ ⎢ ⎢ ⎣ ⎤ = εk ⎥ ⎥ ⎦ ak * ⎡ ⎣⎢ bk * ⎤ ⎦⎥Sk ak bk ⎡ ⎢ ⎢ ⎣ ⎤ ⎥ ⎥ ⎦ ⎤ ⎥ ⎥ ⎥ ⎦ (13a) (13b) (14) ak * ⎡ ⎣⎢ bk * ⎦⎥ Hk − εkSk ⎤ { Stripping off the left row matrix hitting the remaining double product, Hk − εkSk { } ak bk ⎡ ⎢ ⎢ ⎣ ⎤ = 0 ⎥ ⎥ ⎦ } ak bk ⎡ ⎢ ⎢ ⎣ ⎤ = 0 ⎥ ⎥ ⎦ (15) (16) what is present is recognizable from linear matrix theory, as our implicit determinantal equation. That is, in order for (16) to have a solution for any arbitrary column matrix Ssub of the sublattice coefficients weighting the two types of atoms available, A and B, (17) Ssub = ak bk ⎡ ⎢ ⎢ ⎣ ⎤ ⎥ ⎥ ⎦ { (18) } Ssub = 0 Hk − εkSk { det Hk − εkSk with (16) streamlined to the determinant of the matrix hitting Ssub must be zero, giving the secular equation This is the solution for a non-trivial Ssub when it is not null, when at least one of its elements are not zero. For a given k value, (19) will give two energy eigenvalue solutions λ, for λ = 1, 2 bands, associated with the fact that two sublattices of atoms exist, the A εk and B sublattices for graphene or some other two atom Bravais unit cell in real space. In general, the bands are labeled where Nac is the number of atoms inside the Bravais unit cell. Clearly, secular equation (19) is already general. However, (1) must be generalized to The problem may be generalized for any number of atoms in the Bravais unit cell. λ = 1, 2, 3, ⋅⋅⋅, Nac } = 0 (20) (19) ak 1 ak 2 ! ak lNac ⎡ ⎢ ⎢ ⎢ ⎢ ⎢ ⎢ ⎣ ⎤ ⎥ ⎥ ⎥ ⎥ ⎥ ⎥ ⎦ ψk(r) = Nac ∑ ℓsub=1 ak lsubψk lsub(r) = ψk [ 1 (r) ψk 2(r) ! ψk lNac (r) ] (21) which also requires the total sublattice row wavefunction vector be defined as while the sublattice coefficient column matrix of (17) generalize to sub(r) = ψk ψk 2(r) ! ψk 1 (r) ψk lNac (r) ] [ Matrix equivalent of (21) is ⎡ ⎢ ⎢ Ssub = ⎢ ⎢ ⎢ ⎢ ⎣ ak 1 ak 2 ! ak lNac ⎤ ⎥ ⎥ ⎥ ⎥ ⎥ ⎥ ⎦ ψk(r) = ψk sub(r)Ssub 4 (22) (23) (24) Continuing the generalization, the Hamiltonian tested by any number of atoms in the unit cell, by atom total wavefunctions, Hk(r) , and the same and mixed products of any number of atoms in the unit cell, by atom total wavefunctions, Sk(r) (self matrix of the sublattice wavefunctions), are now ⎡ ⎢ ⎢ Hk(r) = ⎢ ⎢ ⎢ ⎣ ⎡ ⎢ ⎢ Sk(r) = ⎢ ⎢ ⎢ ⎣ 1 (r) ψk 2 (r) ψk ! Nac (r) ψk 1 (r) ψk 2 (r) ψk ! Nac (r) ψk ⎤ ⎥ ⎥ ⎥ ⎥ ⎥ ⎦ [ ⎤ ⎥ ⎥ ⎥ ⎥ ⎥ ⎦ H ψk [ 1 (r) ψk 2(r) ! ψk Nac (r) ⎡ ⎢ ] = ⎢ ⎢ ⎢ ⎣ 1 (r)H(r)ψk ψk 1(r) ! Nac (r)H(r)ψk ψk 1(r) ⋅⋅⋅ ψk " ⋅⋅⋅ ψk 1 (r)H(r)ψk Nac(r) ! lNac (r)H(r)ψk Nac(r) 1 (r) ψk ψk 2(r) ! ψk Nac (r) ⎡ ⎢ ] = ⎢ ⎢ ⎢ ⎣ 1 (r)ψk ψk 1(r) ! Nac (r)ψk ψk 1(r) ⋅⋅⋅ ψk " ⋅⋅⋅ ψk Nac(r) 1 (r)ψk ! lNac (r)ψk Nac(r) Inserting (25) into (12) yields the integrated matrix versions, 1 (r) ψk 2 (r) ψk ! Nac (r) ∫∫ = d2r ⎡ ⎢ ⎢ ⎢ ⎢ ⎢ ψk ⎣ 1(r) 1 (r)H(r)ψk ⎤ ⎥ ⎥ ⎥ ⎥ ⎥ ⎦ ∫∫ d2rHk(r) d2rψk ∫∫ ! d2rψk Nac (r)H(r)ψk 1(r) ∫∫ Hk = ∫∫ ⎡ ⎢ = ⎢ ⎢ ⎢ ⎣ H(r) ψk [ 1 (r) ψk 2(r) ! ψk Nac (r) ] d2rψk 1 (r)H(r)ψk Nac(r) ! d2rψk lNac (r)H(r)ψk Nac(r) ∫∫ [ 1 (r) ψk ψk 2(r) ! ψk Nac (r) ] ⎤ ⎥ ⎥ ⎥ ⎥ ⎦ d2rψk Nac(r) 1 (r)ψk ! lNac (r)ψk ⎤ ⎥ ⎥ ⎥ ⎥ ⎦ ⋅⋅⋅ " ⋅⋅⋅ ⎤ ⎥ ⎥ ⎥ ⎥ ⎥ ⎦ ∫∫ 1 (r) ψk 2 (r) ψk ! Nac (r) ψk ⎡ ⎢ ⎢ ⎢ ⎢ ⎢ ⎣ 1(r) ⋅⋅⋅ " ⋅⋅⋅ Sk = ∫∫ d2rSk(r) = ∫∫ d2r ⎡ ⎢ = ⎢ ⎢ ⎢ ⎣ ∫∫ 1 (r)ψk d2rψk ! Nac (r)ψk d2rψk (25a) ⎤ ⎥ ⎥ ⎥ ⎥ ⎦ (25b) (26a) (26b) ⎤ ⎥ ⎥ ⎥ ⎥ ⎦ ij(r) , is obtained from (25a) by inspection, ∫∫ ∫∫ Nac(r) H k d2rψk ij(r) = ψk i (r)H(r)ψk 1(r) The ij matrix element of Hk(r) , H k j(r) Similarly by inspection, the ij matrix element of Sk(r) , Sk From (12), taking the ijth matrix element under the double spatial integration ; Sk = ij(r) = ψk d2rH k i (r)ψk d2rSk j(r) ij = ij(r) ij(r) H k Sk ∫∫ ∫∫ (27a) ij(r) , is obtained from (25b), (27b) (28) 5 high momentum p , Eigenenergies, Fermi Velocities, Overlap & Hopping Integrals Now we know from special relativity [4] that for the low mass case compared to a c2p2 + m2c4 = ± cp lim m→small E = ± lim m→small = ± cp 1 + m2c2 / 2p2 { ( } ) 1 + m2c2 / p2 (29) In the limit of vanishing mass m, Note the form of this last relationship, showing that the energy-momentum ratio is m→0 c2p2 + m2c4 = ± cplim m→0 1 + m2c2 / p2 ≈ ± cp (30) E = ± lim lim m→small E lim m→small p ≈ c (31) Now by an analytical tight-binding approach, outlined in the previous section, one can write the energy about a K-point in graphene as λ = vF εq where λ (λ = ± 1) determines whether one is in the upper or lower Dirac cone, ! is Planck's constant, q the momentum magnitude about the K-point, and vF ε the energy determined Fermi velocity. Here the energy-momentum ratio is ε!λq (32) λ εq !q = vF ε (33) obtained by looking at momentum values close to the K-point. In order to more directly compare the relativistic (31) and non-relativistic Schrodinger equation based result (33), one can rewrite (32) using momentum as Planck's constant times q, λ = vF ελpq εp Here energy derived Fermi velocity is given as ε = − 3taCC vF 2! and dependent on the nearest neighbor hopping integral t. Here aCC is the carbon- carbon closet atomic distance. For t < 0, vF ε will be positive, and the band index, with values λ = ± 1, will select the upper Dirac cone for λ = + 1, and the lower Dirac cone for λ = - 1. For materials with t > 0, the minus sign would be moved out to the λ ʹλ = − λ, so that the old -- 1 would give factor, giving - l, and it would be relabeled as ʹλ = − λ = − (− 1) = + 1. The result of this process is to generate two energies, a positive the positive "+" and the negative "-" , as stated herein (34) (35) 6 ) q = + vF ε+ εpq ; ε− q = − vF εpq ∫∫ (36) d2rφa A * r( )φa AB3 = ΔVsub a B r + rAB3 ( A r( ) and φa One immediately sees that the relativistic energies E+ = cp and E- = - cp are exactly q . q and ε− analogous to the graphene upper and lower Dirac cone energies ε+ The nearest neighbor hopping integral t is given by the expression where φa types A and B. ΔVsub electron in the sublattice system. given by t = tk B r( ) are the atomic wavefunctions of the sublattice atoms of the a is an averaged characteristic potential energy seen by the It is noted here that another type of Fermi velocity can be determined, and is H = − 3 t + sε0 vF 2! which utilizes both a normalized hopping integral t (replace t by t ) and a normalized self or overlap integral s (replace s by s ), given by (39a) (39b) = tζ2 )aCC (37) (38) ( ) = sζ2 A r − a j ( A * r( )φa B r + rAB3 ( B r + rAB3 ) ( A * r( )φa d2rφa d2rφa t = ΔVsub a ∫∫ A * r( )φa d2rφa s = ∫∫ AA = γk 2 − 3 sk ( ) ∫∫ 2 = γkγk * γk = 1 + eik⋅a2 + eik⋅a3 ) 1 + eik⋅a2 + eik⋅a3 ( cos(k ⋅a j) = 3 + 2 ( 3 ∑ j=1 −2 ) = ζ )* (40) (41) Here aj are direct space lattice shift vectors, with j = 1, 2, 3. Energy based Fermi velocity value for graphene approximation, is using (35), working in the cgs system of units, ε = 9.707 ×107 cm / sec vF in the tight binding (42) Because both the energy and Hamiltonian based Fermi velocities have the same format [see (35) and (38)], the energy based one was used to estimate a value since it is the simplest. Equation (42) is based upon the following values of constants and unit conversions: h = 6.626 ×10−27 erg ⋅sec , ! = h /(2π) , aCC = 1.42 Å , 1 Å = 10−8 cm , 1 eV = 1.602 ×1012 erg , t ≈ − 3 eV . Rounding off digits, the Fermi velocity in graphene is roughly To put this tight binding Fermi velocity value for graphene in context, refer back to earlier work on electron transport in GaAs material [5] -- [8], which give saturated drift and peak velocities at room temperature of GaAs : vsat drift ≈ 0.85×107 cm / sec ; vpeak(E = 3.2 kV / cm) ≈ 2.2 ×107 cm / sec (44a) For InAs material [5], [9], InP : vsat drift ≈ 0.95×107 cm / sec ; vpeak(E =10.5 kV / cm) ≈ 2.5×107cm / sec (44b) ε ≈ 108 cm / sec vF (43) 7 (45) Si : vsat drift ≈ 107 cm / sec There are other Fermi velocities which can be found. For example, again looking c ≈ 108 cm / sec vF 3×1010 cm / sec ≈ 3×10−3 For silicon, again at room temperature, the saturated drift velocity is about So the graphene Fermi velocity (15) is about an order of magnitude larger as seen in either silicon (17), GaAs or InP (16). Although it is a large value, and one of the main reasons for using graphene material in solid state devices today, it is nevertheless quite a finite value. To see this, just compare the Fermi velocity in graphene to that of the velocity of light in vacuum. (46) This ratio shows that the electron velocity in graphene is both small and not relativistic. at momentums about the Dirac point, the Hamiltonian can be expressed as ⎤ ⎦ where σx and σy are Pauli spin matrices. Here the vFnnn Fermi velocity is which is based upon the next nearest neighbor hopping integral tnnn AA is about an order of magnitude smaller than the nearest neighbor hopping integral t in (35), its associated Fermi velocity vFnnn will also be so reduced. The true Fermi velocity to examine is vF H , given above in (38), which hits the second term in the Hamiltonian in (47). Eigenenergy associated with Hamiltonian (47) is ε!λq 1 − ξ 4 ξ6qxqyσy − qx ( vFnnn = − 3tnnn AAaCC 2! (48) AA . Because tnnn Hq = − vFnnn 2 +3qy 2 )σx ⎞ ⎟q2I + vF ⎠ 3aCC! 2 ⎛ ⎜ ⎝ H aCC! λ = − 3 nnn!aCCq2 + vF 2 vF εq aCCq 4 cos3ϕq ⎤ ⎦⎥ (47) (49) ε ⎡ ⎣ ⎡ ⎣⎢ Notice that (49 ) has been written in a form where the momentum components qx qnd qy have been converted to angular representation. The trigonal warping effect is then seen explicitly, and results in a second order correction in q to the eigenenergy. However, since eigenenergy to first order in q is proportional to q, the actual correction is just the second term in square brackets, namely, aCCqcos 3ϕq ) / 4 . ( Eigenvectors Based Upon 2-Spinors One wonders, since the eigenenergy has been examined, what one obtains for the eigenvectors. At the outset, it must be stated that the nature of the relativistic solution to the Dirac equation requires construction of 4-spinors [10], and therein lies the richness of its physics. In contrast, the solution to the non-relativistic Schrodinger equation allows for use of 2-spinors in hexagonal planar 2D materials. However, it is possible to reduce the Dirac equation in an extreme limit to a 2-spinor form. That will be done here, to highlight the original thought process, and how it should be reassessed in view of today's search for more innovative materials. In the explicit constant form [11], the Dirac equation is written as 8 γ0 = ⎛ ⎜ ⎜ ⎝ and the σi the Pauli matrices ⎛ ⎜ ⎝ ic!γµ∂µ − mc2 ( )ψ x( ) = 0 ; ψ x( ) = ψL x( ) ψR x( ) ⎡ ⎢ ⎢ ⎣ ⎤ ⎥ ⎥ ⎦ (50) (repeated indices indicate summation) with partial derivative operator matrix coefficients in chiral or Weyl representation given by I2×2 ⎞ ⎟ 0 ⎟ ⎠ 0 σi 0 −σi ; γi = 0 I2×2 (51) ⎞ ⎟⎟ ⎠ ⎛ ⎜⎜ ⎝ σ1 = 0 1 1 0 ⎞ ⎟ ; σ2 = 0 −i 0 i ⎛ ⎜ ⎝ ⎠ ⎞ ⎟ ; σ3 = 1 ⎛ ⎜ ⎝ 0 0 −1 ⎞ ⎟ ⎠ ⎠ (52) Decomposition of ψ into the left-handed ψL and right-handed ψR Weyl 2-spinors is consistent with the 4-spinor form of (50). They have certain rotation and boost properties which will not be delved into here. Derivative 4-operator ∂µ has the following definitions in time and space, ∂x0 = ∂ ∂(ct) ; ∂i = ∇i with ∂i = ∂ ∂xi ∂0 = ∂ (53) From (50) -- (52), utilizing the Weyl 2-spinors, and explicitly writing out the 0 ⎛ ⎜ ⎜⎜ ⎝ ic! ∂0 0 0 ∂0 ⎧ ⎡ ⎪ ⎢ ⎨ ⎢ ⎩⎪ ⎣ terms for closer inspection, ⎤ ⎡ ⎤ + ⎥ ⎢ ⎥ ⎥ ⎢ ⎥ ⎦ ⎣ ⎦ " and noting that σi∇i = ! ∇ , (54) becomes, σ⋅ ⎡ ⎢ ⎢ ⎢ ⎣ −mc2 ic! ∂0 − " σ⋅ σi∇i 0 −σi∇i ! ∇ ( ) ⎫ ⎪ ⎬ ⎭⎪ − mc2 I2×2 0 ⎡ ⎢ ⎢ ⎣ 0 I2×2 ⎞ ⎤ ⎟ ⎥ ⎟⎟ ⎥ ⎦ ⎠ ⎛ ⎜ ⎜ ⎝ ψL(x) ψR(x) ⎞ ⎟ ⎟ ⎠ = 0 (54) ! ∇ ) ( ic! ∂0 + " σ⋅ −mc2 ⎤ ⎛ ⎥ ⎜ ⎥ ⎜ ⎝ ⎥ ⎦ ψL(x) ψR(x) ⎞ ⎟ ⎟ ⎠ = 0 (55) Equation (55) mixes the Lorentz group representations ψL and ψR . For completely massless particles, the diagonal matrix elements go perfectly to zero, and a decoupling of the two implicitly stored equations in (55) occurs. This might is acceptable for a perfectly massless particle such as a photon or graviton, or reasonable for a nearly massless particle such a neutrino of a particular flavor, now known to possess an extremely tiny but finite mass. However, for an electron, with a huge mass compared to a neutrino, this becomes a questionable assumption. However, in view of the nearly 2000:1 ratio between the proton and electron masses, and to obtain 2-spinor versions of the Dirac equation directly relatable to the non-relativistic Schrodinger equation, proceed on in this direction. Coupled equations in (55) are ( Decoupling occurs with m ≡ 0 . Then (56) become, )ψR(x) = 0 )ψL(x) −mc2ψR(x) = 0 −mc2ψL(x) + ic! ∂0 + " σ⋅ ic! ∂0 − " σ⋅ (56a) (56b) ! ∇ ! ∇ ( 9 ⎛ ⎜ ⎜⎜ ⎝ " ∇ ! ∇ ( ( (58) + c! " σ⋅ c! ∂0 + " σ⋅ c! ∂0 − " σ⋅ )ψR(x) = 0 )ψL(x) = 0 (57a) (57b) ψR(x) = ψR0ei( !k⋅ Since either equation is in 2-spinor form, one should be able to use either to form an analogy with graphene. For convenience, choose the ψR(x) equation, and using (53) to write it with explicit time derivative dependence: ! ∂ψR(x) ∂t For plane wave dependence of ψR(x) , Placing (59) into (58), Momentum !q about the two distinct and unique Dirac points (all others arise from these two σ⋅i!kψR(x) = 0 → HR!kψR0 = ERψR0 ; HR!k = c" " ! −i ER ! ⎞ ⎟ψR(x) + c! ⎠ " ∇ψR(x) = 0 ) x and !Kr = 4π/ 3 3 ! ʹKl = − Inserting (61) into (60) yields HR!k = c" so that the Hamiltonian about either Dirac point is given by the shifted value sh± = HR!k ∓ c# H R!k which noting that graphene viewed as strictly 2D planar has kz = 0, making the Pauli matrix -- vector product in (62b), !Kr ), relates to Dirac points by !k = ± !Kr + !q !Kr + !q) = ± c" ! σ⋅ !Kr = c" !Kr + c" ! σ⋅ !q ! σ⋅ !q !x−ERt/") ! σ⋅(± (62b) ! σ⋅ !k (62a) (59) (60) (61) ⎡ ⎣ ⎛ ⎜ ⎝ ( ! σ⋅ ⎤ ⎦ ! σ⋅ !q = 0 qx − iqy ⎡⎣ qx + iqy 0 with tan(θq) = qx / qy or θq = arctan qx / qy ⎡⎣ ⎤⎦ ( ) . ⎤⎦ ⎞ ⎟ ⎟⎟ ⎠ = q ⎛ ⎜ ⎜ ⎝ 0 eiθq e−iθq 0 ⎞ ⎟ ⎟ ⎠ (63) Shifted form of the governing equation for ψR is using (60) , (62) and (63), sh±ψR0 = ER HR!q ⎡ shψR0 → ⎢ ⎢ ⎣ −ER sh −c!qeiθq c!qe−iθq −ER sh ⎤ ⎛ ⎥ ⎜ ⎜ ⎥ ⎝ ⎦ ψR0u ψR0l ⎞ ⎟ ⎟ ⎠ = 0 (64) The determinant of this equation must be zero for a solution to exist, giving the eigenenergy solution det −ER sh −c!eiθq ⎡ ⎢ ⎢ ⎣ c!e−iθq −ER sh ⎤ = 0 ⇒ ER sh ⎥ ⎥ ⎦ ( )2 = (c!)2q2 ⇒ ER sh = ± c!q (65) a result found in (30). Letting c → vF reproduces in (65) the linear energy vs momentum ( p = !q ) graphene first order result for the upper π* (energy > 0) and lower π (energy < 10 c!q eiθqψR0u 0) bands [see (34)]. For the eigenvector, write out the two spinor component requirements from (64), −ER shψR0u+c!qe−iθqψR0l = 0 ⇒ ψR0l = ER (66a) sh Using the first of this pair of equations (as they must contain the same information), and (65), (66b) c!qeiθqψR0u − ER shψR0l = 0 ψRq0= ψRq0u ψRq0l ⎛ ⎜ ⎜ ⎝ ⎞ ⎟ ⎟ ⎠ = ψRq0u ± eiθqψRq0u ⎛ ⎜ ⎜ ⎝ ⎞ ⎟ ⎟ ⎠ = ⎛ ⎜⎜ ⎝ 1 ± eiθq ⎞ ⎟⎟ψRq0u = 1 2 ⎠ 1 ± eiθq ⎛ ⎜⎜ ⎝ ⎞ ⎟⎟ ⎠ (67) Last form is for the normalized case, with ± signs associated with the upper/lower bands of graphene. If one factors out eiθq/2 , rescales, and renormalizes, one obtains, ψRq0= 1 ± eiθq ⎛ ⎜⎜ ⎝ ⎞ ⎟⎟ψRq0u = ⎠ ⎛ ⎜ ⎜ ⎝ eiθq/2 ± eiθq/2 ⎞ ⎟ ⎟ ⎠ eiθq/2 ψRq0u ⎡ ⎣ ⎤ ⎦ = ⎛ ⎜ ⎜ ⎝ e−iθq/2 ± eiθq/2 ⎞ ⎟ ⎟ψRq0u = ⎠ 1 2 ⎛ ⎜ ⎜ ⎝ e−iθq/2 ± eiθq/2 ⎞ ⎟ ⎟ ⎠ (68) The last form is seen to be that of (20) of Section II. Elementary Electronic Properties of Graphene, B. Dirac Fermions, for the K point; and further it is noted that under Chiral Tunneling and Klein paradox, our form (67) appears as their (24) from a gauge transformation [12]; see also [13]. ! ʹKl point solution is easily found from the Kr point solution as follows. Examine the full ! σ⋅ The !k product appearing in (60), enlist (61), and inspect, 0 ⎞ ⎟ ⎟ ⎠ ±Kr+qe−iθq ±Kr+qeiθq kx − iky = ⎛ ⎜ ⎜ ⎝ kx + iky 0 0 ⎡⎣ ⎤⎦ ⎞ ⎟ ⎟⎟ ⎠ ⎡⎣ ⎛ ⎜ ⎜⎜ ⎝ σ⋅ !k = ! (69) ⎤⎦ 0 !k products Kr+qe−iθq ⎞ ⎟ ⎟ ⎠ 0 which gives the two ! σ⋅ σ⋅ !k !Kr ! = if !Kr → ⎛ ⎜ ⎜ ⎝ ! ʹKl = − Kr+qeiθq 0 σ⋅ !k ! ; ! ʹKl = ⎛ ⎜ ⎜ ⎝ −Kr+qe−iθq 0 −Kr+qeiθq ⎞ ⎟ ⎟ ⎠ 0 ) = −θq ). Then !Kr = −Kr x and if qx → −qx (θq → arctan −qx / qy ( ! ʹKl = ψRq0 1 2 ⎛ ⎜ ⎜ ⎝ eiθq/2 ± e−iθq/2 ⎞ ⎟ ⎟ ⎠ (70) (71) Eigenvectors Based Upon 4-Spinors If one tries to upgrade the graphene to a 4-spinor and directly compare with the fully coupled Dirac wavefunctions ψL and ψR , one finds that no direct association is possible for the spinors, as will be demonstrated below. This is not surprising, especially in light of what had to be assumed to craft the relativistic equation into a less rich form. These assumptions included some very drastic measures, such as dropping explicit mass 11 terms, and collapsing the dimensionality into one less dimension to get the idealized graphene sheet in 2D. In contrast, the solution to the non-relativistic Schrodinger equation allows for use of 2-spinors. It is possible to upgrade the 2-spinor solution for the hexagonal 2D crystal case, into a 4-spinor form, by employment of the attributes of the two types of Dirac crystallographic points in k-space. Details of that procedure are shown elsewhere [14], and here one merely utilizes the solutions found. First consider the upper Dirac cone for graphene, and the plane wave solution of the Dirac equation for z-directed forward wave ʹKl , points; propagation. The eigenvectors for positive energy graphene (Kr and normalized forms) and positive energy Dirac plane wave are (lower l, upper u, spinor parts; unnormalized forms) respectively, ⎤ ⎥ ⇔ ψl ⎥ ⎥ ⎥ ⎦ D+, tiny m = ⎛ ⎜ ⎜ ⎜ ⎜ ⎜ ⎝ 0 2cp z 0 0 ⎤ ⎥ ⇔ ψu ⎥ ⎥ ⎥ ⎦ D+, tiny m = ⎛ ⎜ ⎜ ⎜ ⎜ ⎜ ⎝ 0 0 2c p z 0 ⎞ ⎟ ⎟ ⎟ ⎟ ⎟ ⎠ Graph+ = 1 ΨKr, q 2 Graph+ = 1 Ψ ʹKl, q 2 ⎡ ⎢ ⎢ ⎢ ⎢ ⎣ ⎡ ⎢ ⎢ ⎢ ⎢ ⎣ 1 − eiϕq 0 0 0 0 1 eiϕq ⎞ ⎟ ⎟ ⎟ ⎟ ⎟ ⎠ (72a) (72b) ʹKl It is seen immediately in (72a) that our Kr graphene spinor has two upper elements, whereas the relativistic eigenvector, or 4-spinor, has a single 2nd element occupied. Here φq is angle measured by qx and qy components. So there is not an exact matchup. For the point [see (72b)], graphene spinor has two lower elements, whereas the relativistic eigenvector, or 4-spinor, has a single 3rd element occupied. So again there is not an exact matchup. the same K symmetry points for graphene as for the positive energy solution, and using a relativistic eigenvector solution employing a backward going plane wave, What about the lower or negative energy Dirac cone for graphene? Again using Graph− = 1 ΨKr, q 2 Graph− = 1 Ψ ʹKl, q 2 ⎡ ⎢ ⎢ ⎢ ⎢ ⎣ ⎡ ⎢ ⎢ ⎢ ⎢ ⎣ 1 eiϕq 0 0 ⎤ ⎥ ⇔ ψu, ⎥ ⎥ ⎥ ⎦ D−, tiny m, back = ⎛ ⎜ ⎜ ⎜ ⎜ ⎜ ⎝ 2cp z 0 0 0 0 0 1 − eiϕq ⎤ ⎥ ⇔ ψl ⎥ ⎥ ⎥ ⎦ D−, tiny m, back = ⎛ ⎜ ⎜ ⎜ ⎜ ⎜ ⎝ ( 12 ⎞ ⎟ ⎟ ⎟ ⎟ ⎟ ⎠ 0 0 0 2c p z (73a) ⎞ ⎟ ⎟ ⎟ ⎟ ⎟ ⎠ ) (73b) One sees that the mismatch in elements occupied occurs again between the non- relativistic graphene eigenvector solutions (Kr and K'l points) and the relativistic Dirac eigenvector solution (upper and lower). That is, the graphene eigenvector has two elements, whereas the relativistic eigenvector has a single element occupied. For forward plane wave solutions to the relativistic eigenvector, the comparisons made for non-relativistic graphene to relativistic Dirac eigenvectors are, Graph− = 1 ΨKr, q 2 Graph− = 1 Ψ ʹKl, q 2 ⎡ ⎢ ⎢ ⎢ ⎢ ⎣ ⎡ ⎢ ⎢ ⎢ ⎢ ⎣ 1 eiϕq 0 0 0 0 1 − eiϕq ⎤ ⎥ ⇔ ψl ⎥ ⎥ ⎥ ⎦ ⎛ ⎜ ⎜ ⎜ ⎜ ⎜ ⎝ D− = − 2cp z, new 0 0 0 ⎤ ⎥ ⇔ ψu ⎥ ⎥ ⎥ ⎦ D− = ⎛ ⎜ ⎜ ⎜ ⎜ ⎜ ⎝ 0 0 0 2cp z, new ⎞ ⎟ ⎟ ⎟ ⎟ ⎟ ⎠ ⎞ ⎟ ⎟ ⎟ ⎟ ⎟ ⎠ (74a) (74b) Extending the solution of the Dirac equation to include momentum transverse to the z-direction, for positive energy case, ⎤ ⎥ ⇔ ψu ⎥ ⎥ ⎥ ⎦ Graph+ = 1 ΨKr, q 2 1 − eiϕq 0 0 D⊥+ = ⎡ ⎢ ⎢ ⎢ ⎢ ⎣ 0 (75a) − p⊥ eiθp⊥ /(mc) ⎛ ⎜ ⎜ ⎜ ⎜ ⎜ ⎝ − p⊥ e−iθp⊥ /(mc) 1 0 2 p z /(mc) 0 1 ⎞ ⎟ ⎟ ⎟ ⎟ ⎟ ⎠ ⎞ ⎟ ⎟ ⎟ ⎟ ⎟ ⎠ (75b) Graph+ = 1 Ψ ʹKl, q 2 0 0 1 eiϕq ⎡ ⎢ ⎢ ⎢ ⎢ ⎣ ⎤ ⎥ ⇔ ψl ⎥ ⎥ ⎥ ⎦ D⊥+ = ⎛ ⎜ ⎜ ⎜ ⎜ ⎜ ⎝ It is seen that the graphene eigenvector and the relativistic upper eigenvector both have two elements. However, this is not the situation for the lower relativistic eigenvector, unless p⊥ / p << 1 or pz / p⊥ << 1, making the longitudinally z-directed momentum large compared to the transverse momentum, or the reverse. For the negative energy case, 1 eiϕq 0 0 Graph− = 1 ΨKr, q 2 ⎡ ⎢ ⎢ ⎢ ⎢ ⎣ ⎤ ⎥ ⇔ ψu ⎥ ⎥ ⎥ ⎦ D⊥− = − ⎛ ⎜ ⎜ ⎜ ⎜ ⎜ ⎝ 2 p z /(mc) p⊥ eiθp⊥ /(mc) 1 0 ⎞ ⎟ ⎟ ⎟ ⎟ ⎟ ⎠ (76a) 13 Graph− = 1 Ψ ʹKl, q 2 0 0 1 − eiϕq ⎡ ⎢ ⎢ ⎢ ⎢ ⎣ ⎤ ⎥ ⇔ ψl ⎥ ⎥ ⎥ ⎦ D⊥− = ⎛ ⎜ ⎜ ⎜ ⎜ ⎜ ⎝ − p⊥ e−iθp⊥ /(mc) 0 0 1 ⎞ ⎟ ⎟ ⎟ ⎟ ⎟ ⎠ (76b) Here the element mismatch occurs for the upper relativistic eigenvector and the graphene eigenvector. That element number mismatch goes away for either p⊥ / p << 1 or pz / p⊥ << 1. Conclusions and Future Outlook From the above analysis, one sees that graphene, and by analogy to it, similar 2D materials, are analogous to low mass relativistic particles in the eigenenergy sense. It is much harder to draw analogies between the eigenvectors arising from fundamentally different kinetic physics, namely, the Schrodinger nonrelativistic equation based 2D solid state materials, exemplified by monoatomic graphene, and the relativistic Dirac equation. The closest association arises for the decoupled relativistic equation and the graphene solutions. However, we know one of the main drawbacks of the simple so called condensed matter Dirac materials is that they seem to lack a band gap. A paper which thoroughly explored the behavior of graphene field effect transistors, provided hole p and electron n density profiles and dependence on Fermi energy εF , their respective drain partial current profiles JD, p and JD, n and dependence on VGS, drain current JD and transconductance gm vs VGS and VDS, gate capacitance Cg vs VGS, and the short circuit current-gain cut-off frequency fτ vs JD and gate length L [15]. It found that the ambipolar transport with no gap leads to limited channel pinch-off, and a lack of an off-state [15]. This does not bode well for semiconducting uses in active electronic devices such as transistors. One wonders if the linear energy vs momentum dispersion relation is retained while opening up a bandgap in some new materials? Or can one avoid completely the type of bandstructure associated with Dirac points and gapless behavior in other 2D materials? Despite these bandgap issues, there have been many uses found for graphene, too numerous to list comprehensively here, but noting two examples [16], [17]. role in future electronics? A 2D material related to graphene, just treated, is graphyne [18] - [21], which consists of a lattice of benzene rings connected by triple acetylene bonded C-C atoms. In comparison to graphene's pure sp2 hybridization and diamond's pure sp3 hybridization, graphyne can be considered a mixed hybridization, spn, where 1 < n < 2. depending on the content of the acetylene groups. Some of its graphyne's allotropes have finite bandgaps (predicted to be between 0. 5 and 2.5 eV), useful for semiconductor electronics and getting one away from the metallic state, which is essentially what graphene is viewed from an electronic transport perspective. Graphyne also has promise in thermoelectrics, energy storage and battery usage. Another monoatomic material, consisting only of boron atoms, with some allotropes displaying bandgaps (on the order of one to a few eV) and interesting for semiconductor electronics, So one wonders what are the possibilities in terms of which materials may play a 14 1 "2 ∂2ε( !k) ∂q2 = d[vF ( ε!qx]/ dqx 1 m* = 1 !2 1 = !2 dε/ dqx ( − dε/ dqx )−qx1 ( )qx1 qx1 − (−qx1) − d[−vF )qx1 ( qx1 − (−qx1) ε!qx]/ dqx It is informative to note the following results from classical quantum mechanics is borophene [22] -- [26]. Some of its hexagons are filled with boron atoms, modifying its 2D hexagonal honeycomb structure. for the effective mass of materials [27], = 1 !2 ∂2ε( !k) ∂ki∂kj 1 m* (77) ⎞ ⎟ ⎠ ij ⎛ ⎜ ⎝ Evaluate this at a Dirac point using the x-axis shifts of ± qx about 0, (32) for the energy and λ = +1 for the upper cone. One obtains for the isotropic case (78) )−qx1 = ε vF !qx1 ( ( 2D +c12 2D +c12 2D)]−1 2D)]}. Here r is the )SQRT{E0β2 exp[βr0a33P /(c11 Finally, although it has been suspected for some time graphene may not be which shows that in the limit qx1 → 0 (the Dirac point momentum approaches zero), the effective mass at a Dirac point is zero, since its inverse value approaches infinity. Although completely consistent with the reduction employed in obtaining (57), this highlights the problem with 2D Dirac materials. They are very unlikely to reproduce the desirable finite bandgap properties of more conventional, but highly effective semiconductors for electronics. perfectly thin, and this may play into its mechanical properties [28], [29], it has been definitively shown recently [30] where the in-plane phonon graphite mode frequency for both graphene and graphite follow a similar trend, expressed as ω(P) = 1/[πc m )exp[βr0a33P /(c11 separation of the nearest C-C atoms, r0 is the unstrained C-C bond length, E0 and β denote the depth and width of the potential, respectively, in a Morse potential description, and a33 is the interlayer spacing. a33 relates to each carbon atom having electronic orbitals (the 2pz orbitals) that extend some distance above and below the graphene sheet and resist compression. Elastic constants are denoted by the usual tensor constants c11 2D and c12 shift rates of 5.4 cm-1GPa-1 for graphene and 4.7 cm-1GPa-1 for graphite, implying that monolayer graphene has similar in-plane and out-of-plane stiffnesses, and anharmonicities to graphite. mixing of the pure sp2 hybridization of graphene and diamond's pure sp3 hybridization, the need for 4-spinor eigenvectors may be warranted and its energy spectrum more conducive to obtaining desirable ε(k) properties for electronics. 2D . The similarity of the trends was determined to a maximum of about 7 GPa, with Implications for alternatives to graphene, such as graphyne, are clear, that with its 15 Acknowledgments This work was supported by the US Office of Naval Research. References "Disordered RuO2 exhibits two dimensional, low-mobility transport [1] M. S. Osofsky, S. C. Hernández-Hangarter, A. Nath, V. D. Wheeler, S. G. Walton, C. M. Krowne, D. K. Gaskill, "Functionalized Graphene As a Model System for the Two- Dimensional Metal-Insulator Transition," Scientific Reports 6 -- a Nature Journal, 19939, Feb. 10, 2016. [2] M.S. Osofsky, C.M. Krowne, K.M. Charipar, K. Bussmann, C.N. Chervin, I.R. Pala, and D.R. Rolison, and a metal-insulator transition," Scientific Reports 6 - a Nature Journal, 21836, Feb. 26, 2016. [3] C. M. Krowne, Ch. 3., Tight-binding formulation of electronic band structure of 2D hexagonal materials, Adv. Imaging Electr. Phys. 210, 23 -- 45, 2019. [4] Kittel, C., Knight, W. D., Ruderman, M. A. (1965). Mechanics, Berkeley Physics Course, Vol. 1, McGraw-Hill, New York. [5] Sze, S. M. (1981). Physics of Semiconductor Devices, 2nd edition, Wiley, New York. [6] Butcher, P. N., Fawcett, W. (1966). Calculation of the Velocity-Field Characteristics for Gallium-Arsenide, Phys. Lett. 21, 489. [7] Ruch, J. G., Kino, G. S. (1967). Measurements of the Velocity-Field Characteristics for Gallium-Arsenide, Appl. Phys. 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"Self-assembly of electronically abrupt borophene/organic lateral heterostructures," Sci. Adv. 3, 1602356, 22 Feb. [26] Hongsheng Liu, Junfeng Gao, Jijun Zhao. 2013. "From Boron Cluster to Two- Dimensional Boron Sheet on Cu(111) Surface: Growth Mechanism and Hole Formation," Sci. Rep. 3, 3238, 18 Nov. [27] J. P. McKelvey, Solid State and Semiconductor Physics, Harper& Row, 1966. [28] J. E. Proctor, E. Gregoryanz, K. S. Novoselov, M. Lotya, J. N. Coleman, and M. P. Halsall, "High-pressure Raman spectroscopy of graphene," Phys. Rev. B 80, 073408 (2009). [29] J. E. Proctor, D. A. Melendrez Armada, and A. Vijayaragha-van, An Introduction to Graphene and Carbon Nanotubes (CRC Press, Boca Raton, 2017). [30] Y. W. Sun, W. Liu, I. Hernandez, J. Gonzalez, F. Rodriguez, D. J. Dunstan, and C. J. Humphreys, ``3D strain in 2D materials: To what extent is monolayer graphene graphite?'' Phys. Rev. Lett. 123, 135501 (2019). 17
1912.02221	2	1912	2019-12-22T21:03:31	Artificial Synapse with Mnemonic Functionality using GSST-based Photonic Integrated Memory	[ "physics.app-ph", "physics.optics" ]	Machine-learning tasks performed by neural networks demonstrated useful capabilities for producing reliable, and repeatable intelligent decisions. Integrated photonics, leveraging both component miniaturization and the wave-nature of the signals, can potentially outperform electronics architectures when performing inference tasks. However, the missing photon-photon force challenges non-volatile photonic device-functionality required for efficient neural networks. Here we present a novel concept and optimization of multi-level discrete-state non-volatile photonic memory based on an ultra-compact (<4um) hybrid phase change material GSST-silicon Mach Zehnder modulator, with low insertion losses (3dB), to serve as node in a photonic neural network. An optimized electro-thermal switching mechanism, induced by Joule heating through tungsten contacts, is engineered. This operation allows to change the phase of the GSST film thus providing weight updating functionality to the network. We show that a 5 V pulse-train (<1 us, 20 pulses) applied to a serpentine contact produces crystallization and a single pulse of longer duration (2 us) amorphization, used to set the analog synaptic weights of a neuron. Emulating an opportunely trained 100x100 fully connected multilayered perceptron neural network with this weighting functionality embedded as photonic memory, shows up to 93% inference accuracy and robustness towards noise when performing predictions of unseen data	physics.app-ph	physics	Artificial Synapse with Mnemonic Functionality using GSST-based Photonic Integrated Memory Mario Miscuglio1, Jiawei Meng1, Omer Yesiliurt2, Yifei Zhang3, Ludmila J. Prokopeva2, Armin Mehrabian1, Juejun Hu3, Alexander V. Kildishev2 and Volker J. Sorger1* 1 Department of Electrical and Computer Engineering George Washington University, 800 22nd Street NW, Washington, DC 20052, USA 2 Birck Nanotechnology Center, School of ECE, Purdue University, West Lafayette, IN 47907, USA 3 Department of Materials Science & Engineering Massachusetts Institute of Technology, Cambridge, MA, USA *Corresponding Author, [email protected] Abstract ─ Machine-learning tasks performed by neural networks demonstrated useful capabilities for producing reliable, and repeatable intelligent decisions. Integrated photonics, leveraging both component miniaturization and the wave-nature of the signals, can potentially outperform electronics architectures when performing inference tasks. However, the missing photon-photon force challenges non-volatile photonic device- functionality required for efficient neural networks. Here we present a novel concept and optimization of multi- level discrete-state non-volatile photonic memory based on an ultra-compact (<4µm) hybrid phase change material GSST-silicon Mach Zehnder modulator, with low insertion losses (3dB), to serve as node in a photonic neural network. An optimized electro-thermal switching mechanism, induced by Joule heating through tungsten contacts, is engineered. This operation allows to change the phase of the GSST film thus providing weight updating functionality to the network. We show that a 5 V pulse-train (<1 µs, 20 pulses) applied to a serpentine contact produces crystallization and a single pulse of longer duration (2 µs) amorphization, used to set the analog synaptic weights of a neuron. Emulating an connected opportunely multilayered perceptron neural network with this weighting functionality embedded as photonic memory, shows up to 93% inference accuracy and robustness towards noise when performing predictions of unseen data. Index Terms ─ Phase change materials, PCM, Photonic Memory, GSST, Neuromorphic, Integrated Photonics, Neural Network, non-volatile. 100×100 trained fully their respective INTRODUCTION I. The past decades have been marked by an exponential increase in demand for high-speed and energy-efficient computer architectures. Moore's law and Dennard- scaling have reached limits [1]; therefore, microelectronics faces fundamental trade-offs in terms of power efficiency when processing large data volumes and complex systems with short delay. Some of these computational or processing challenges could be addressed with neural networks (NN); these networks comprised of neurons, loosely modeled based on their biological counterparts, take up, processes, and transmit information through electrical signals. Their main operations are weighted additions of the input signals (multiply and accumulate, MAC) and a nonlinear activation function (NLAF), i.e. threshold. The training phase of a NN consists of a feeding large dataset to the network and by back-propagation recursively adjust the weights for modelling the data. After being trained a faster and more efficient version of a NN can infer and perform prediction tasks on new (unseen) data. Due to this large amount of recursive and iterative operations, NNs are usually implemented in Tensor Process Units (TPUs) and Graphic Process Units (GPUs), which are optimized architectures that parallelly and efficiently perform the dot-product multiplication, summation, and nonlinear (NL) thresholding on the input data, providing high efficiency and ultra-high throughput [2] for specific tasks. Thanks to dedicated modules, they perform inference tasks more efficient than general-purpose CPU equivalents, however, these approaches still rely on electronic transport and are bound by the speed and power limits of the interconnects inside the circuits hence affected by RC parasitic effects. In contrast, to electronics, integrated photonics can provide low delay interconnectivity which meets the requirements for node-distributed non-Von Neumann architectures that can implement NNs relying on dense node-to-node communication. Moreover, in trained networks the weights found during training are fixed and are only sporadically updated, therefore weighted addition (MAC) and vector matrix multiplication (VMM) can be effortlessly and passively performed in photonics, by means of phase modulation or wavelength division multiplexing (WDM) using networks of linear EO modulators, MZMs [3], [4] or micro-ring modulators [5], [6]. Thus, once the NNs weights are SET, after training, the delay in the network is given by the time-of-flight of the photon, which for large network is in the 10's ps range, plus the back-end O-E conversion by the photodetector (<100 ps). therefore However, the functionality of memory for storing the trained weights is not straightforwardly achieved in optics[7], [8], or at least in its non-volatile implementation, and requires additional circuitry and components (i.e. DAC, memory) and related consumption of static power, sinking the overall benefits (energy efficiency and speed) of photonics. Therefore, computing AI-systems and machine-learning (ML) transferring and storing data exclusively in the optical domain, is highly desirable because of the inherently large bandwidth, low residual crosstalk, and short-delay of optical information transfer.[9] The non-volatile retention of information in integrated photonics can be provided by the light-matter interaction in phase change memory (PCM)[10] -- [14]. tasks, while Germanium-antimony-tellurium (GST) is a PCM from the group of chalcogenide glasses and is characterized by a remarkable variation of the complex refractive index between its crystalline and amorphous states. In such a material, the variation of the phase can be induced by local heating, either thermally (heaters), electrostatically (contacts), or all-optically (laser). Recently, GST have been also employed in photonic NNs [15] -- [17]. However, even if these materials exhibit large contrast of both refractive index (Δn) and optical loss (Δk), simultaneously, they are characterized by relatively high insertion losses, high switching energy and poor number of cycles, which can potentially limit the number of neurons and the depth of the network, and concurrently the number of times that the network can be updated. Due to these limitations, new classes of specialized optical PCMs are investigated. Here, we leverage on a recently engineered class of optical PCMs, based on Ge -- Sb -- Se -- Te (GSST) alloy[18], whose amorphous state is not characterized by high absorption coefficient, and upon phase change, its alloy, Ge2Sb2Se4Te1, transparency (1 -- 18.5 μm), refractive index is still subjected to unitary modulation. The optimized combines broadband large optical contrast (Δn = 2.0), and significantly improved glass forming ability. Thence, we design a low loss non- volatile photonic memory, using a balanced GSST-based Mach Zehnder Modulator and develop a numerical framework for optimizing the heaters configuration and evaluating the temporal switching response of such GSST-based photonic memory. Exploiting the low delay interconnectivity of photonic integrated chips and the non-volatile transitions of PCM, an all-optical (AO) trained NN, that effortlessly performs dot-product functionality can be achieved, enabling intelligent computing functionality at the time-of-flight of the photon. II. A. Optical constants of phase change materials RESULTS Improvements in the field of non-volatile photonic memory pertains the engineering of processes aimed at synthetizing more effective and efficient films based on phase change alloys, in which a concurrent minimization of the losses and maximization of the modulation between amorphous and crystalline state allows to keep information longer in the optical-domain, i.e. avoids cumbersome O-to-E-to-O conversions[13], [19]. process, e.g. interfacial This, however, requires a wisely engineered material PCM (GeTe/Sb2Te3)[13] and optimized alloys[18]. Contrary to regularly used GST (Fig. 1a), GSS4T1 exhibits a 3 orders of magnitude lower absorption coefficient while preserving a large n of 2.1 to 1.7 across the near- to mid-IR bands, suggesting its use as photonic memory in an electro-refractive scheme, such as MZI or ring-based cavities. Additionally, the GSS4T1 film is characterized by a high index ratio, ∆𝑛/𝜅 = 5 (also often used as figure of merit for nonlinear materials), due to its low index contrast and relatively small 𝜅, even without any metal- insulator transition. Electro-refractive photonic memory based on hybrid GSS4T1-Silicon waveguide operating at 1550 nm would allow to fabricate photonic memory devices with remarkably large modulation dynamic and contained losses (Table. 1). for for modeling. However, In this paper, we use the tabulated ellipsometry data fully coupled multiphysics modeling including thermal processes and switching, it is possible to develop a time-domain multivariate model with temperature and crystallization level as parameters. Normally, data fitting for PCMs is done in the frequency domain with the Code-Lorentz, Tauc-Lorentz, and Gauss models for each dataset, that do not allow dependence on parameters and straightforward time-domain implementation. The full multivariate time-domain model however can be built using the generalized dispersive material model[20]. Figure 1. Experimentally obtained (ellipsometry) optical properties of phase change material (PCM) films: GST (a), and Ge2Sb2Se4Te1(b). Real (n, left y-axis) and imaginary (𝜅, right y-axis) parts of the refractive indices of the amorphous (solid line) and crystalline alloys. (dashed line). The GSST (right) shows a strong unity n, while simultaneously showing small induced loss,  = 0.4 making it a promising candidate for non-volatile phase-shifting photonic devices such as modulators, tunable structures, or directional-coupler-based 2x2 switches. Table 1: Complex refractive index (n+i𝜅) of different GST and GSST (Ge-Sb-Se-Te) materials at 1550 nm, characterized by ellipsometry. For our study, we consider GSS4T1 (values taken from [21])which displays a particularly high Figure of Merit, defined as ∆𝑛/𝜅, (5.02). AMORPHOUS CRYSTALLINE FOM Material n 𝛋 n 𝛋 GST225 4.690 0.192 8.027 1.882 1.774 GSS1T4 GSS2T3 GSS3T2 → GSS4T1 4.725 4.800 4.192 3.325 0.208 0.220 0.056 1.8x10-4 7.704 7.059 6.800 5.083 1.464 1.444 1.049 2.035 1.565 2.485 0.350 → 5.02 B. Mode analysis With photonic networks on chip in mind [22], when the network is trained offline using emulators, such as TensorFlow, which accounts for the physics of the devices and their functionalities[6], [4], the extracted weights are set by selectively 'writing' portions of the GSST deposited on the waveguides, by heat induced laser irradiation, or local electrostatic heating, which promotes crystallization, and consequently modifies the waveguide modal refractive index in a reversible process (Fig. 2). transversal electric Figure 2. Schematic of an electro-optic modulator based on a balanced Mach Zehnder interferometer (MZI), such as used to program weights (dot-products) of a photonic NN. b) Fundamental (TE) and Transverse magnetic mode profiles (normalized electric field) of the GSST-Silicon hybrid waveguide at 1550 nm for amorphous and crystalline GSST show a strong index (real-part) difference ~ 0.2, while incurring a relatively low loss  = 0.4. Black arrows represent the direction and intensity of the magnetic field (Hx,Hy). length of To derive the effective modal index and the propagation the hybrid GSST-silicon waveguide we use eigenmode analysis. A PCM film of 30 nm of Ge-Sb-Se-Te (GSST) [Ge2Sb2Se4Te1] is considered to be deposited atop of a planarized waveguide and a phase transition is induced by local heaters (described in Section II.C). and The model exploits the experimentally measured optical constants of GSST (Section II.A), which are obtained using coupled spectroscopic ellipsometry transmittance/reflectance measurements from the visible through long-wave infrared. The complex effective refractive index (neff) in the amorphous state enables rather low insertion losses for a strong real-part variation ∆𝒏𝒆𝒇𝒇 = 𝒏𝒆𝒇𝒇, 𝒂 − 𝒏𝒆𝒇𝒇, 𝒄 approximately equal to 0.2 -0.25 for TM and TE mode, respectively (Fig. 2b). Considering such favorably low insertion losses caused by the low absorption coefficient in the amorphous state and the stark variation of the refractive index in the crystalline state, we proceed to designing a balanced passive push-pull Mach Zehnder modulator (MZM) configuration (Fig. 2a), in which on both sides the GSST material are deposited in the amorphous condition (aGSST). To modulate the intensity of the signal at its output, the MZI is purposely unbalanced by thermally writing a portion of the GSST film deposited in the "programmable arm" of the MZI (Fig. 3b). For a TM mode, for instance, the length of the active part of the modulator is just 3.8 µm short for achieving a π phase shift, when the entire film on the 'recordable' branch has changed to its crystalline phase. To our knowledge, the device is one order of magnitude smaller than one of the most compact MZM ever reported[23], with positive effects on the electrical capacitance improving both response time and power consumption. The lateral section of the written part of the material corresponds to a "quantized weight", and assuming a stabile writing resolution of about 500 nm[14], same achieved by optical writing, the total amount of available discrete resolution is given by 8 distinct states (3-bit) which can be further improved or condition on the resolution relaxed by extending the device length by multiple of Lπ (Fig.3a-b). Additionally, this is a reversible process, which allows to update the 40090014001900Wavelength (nm)33.544.555.56n00.511.5namorphousncrystallineamorphouscrystalline∆∆~1.8x10-4~0.35(cid:9)~5.1(cid:9)~3.3nGe2Sb2Se4Te140090014001900Wavelength (nm)3456789n00.511.5namorphousncrystallineamorphousncrystalline∆∆~0.19~4.69~8.02~1.88GSTa)b)PCMBalanceLossesHeaterPlanarizedSi WGVTE ModeTM ModeΔnefffor TM Mode= 0.212 -- 0.045ineff= 2.154-0.045ineff= 1.942neff= 2.677-0.066ineff= 2.461a)b)weights after many execution times. Interestingly, this solution is not hindered by insertion losses, which are negligible due to the rather low absorption coefficient of GSST at 1550 nm, and the total losses (~3dB) are mainly caused by the balancing mechanism (in this first analysis straightforwardly obtained achieved by placing a gold contact on the balancing arm). As an interim conclusion, this novel PCM MZM features by a micrometer-compact footprint and low insertion losses (<3dB), enabling the implementation of a deep NN (3 layers) which comprises multiple nodes. and ratio, ER, 2. Extinction insertion Figure loss, IL, performance for the loss balanced MZI. (a) Schematic representation of the balanced GSST MZM. The loss is balanced by depositing additional cGSST on the balancing arm to maximize the ER compensating for the additional losses of the phase changed (cGSST) portion in the programmable arm (a) The normalized output power considering compensated losses, the weighting is quantized since the resolution of the phase changing process is 500nm for altering the active arm of the MZI. C. Electrothermal Switching As mentioned in the previous section, the GSST needs to be locally written according to the weights obtained during the training phase (Section II.D). For performing this function, we consider using electro-thermal local switching using heaters. 3D time-dependent multi- physics simulations, including model for heat transfer in solids coupled with the electric currents model, have been carried out. Preliminary thermal characterization conducted by our group shows that the conductivity of GSST is 0.17±0.02 W/m/K for amorphous phase and 0.43±0.04 W/m/K for crystalline phase, while in amorphous and crystalline phase for GSST film are and 1.85±0.05 MJ/m^3/K, 1.45±0.05 MJ/m3/K respectively. We primarily focus our efforts in optimizing the heaters position with respect to the waveguide to minimize the ohmic losses due to the presence of metal and concurrently lower the threshold voltage for delivering the right amount of heat for inducing a phase transition in the GSST. the heat capacity The heating elements (Fig. 5) considered are tungsten and ITO shaped in a circuitous serpentine (10 µm length, 20 folds), and properly biased they for (25V) voltage dissipate energy in the form of Joule heat in the surrounding media. In this view, we investigate three different heaters configuration: 1) vertical, using tungsten W (Fig. 6a) 2) vertical ITO/contact 3) lateral (Fig. 6b). Moreover, the temperature at which the GSST reaches the amorphous state is considered in our study around 900 K, whereas for inducing re-crystallization, the GSST needs to be heated above the crystallization temperature (∼523 K) but below the melting point, for a critical amount of time, therefore multiple pulses are needed [18]. 1) The vertical configuration consists in placing the tungsten (W) heating element 250 nm above the silicon waveguide, surrounded by an oxide layer, to minimize the mode-overlap with the metal and eventual scattering, while still be in proximity of the GSST layer on top of the waveguide. This configuration requires longer pulse period (6µs) for crystallization and higher threshold inducing amorphization/crystallization among the group. The losses introduced by this configuration are extremely low (0.06dB/µm for a propagating TM mode). 2) The lateral configuration consists of two W resistive heaters placed directly in contact with the GSST film, 50 nm away from the waveguide, thus providing more heat to the film locally (lowering the switching threshold), but also storing heat for successive pulses. This configuration even though is more electrothermally efficient is affected by higher insertion losses compared to the previous one (additional ~0.11dB/µm for a propagating TM mode). 3) Being ITO characterized by low optical losses (𝑛 = 1.4, 𝜅 =0.2) at 1550 nm, (electrical resistivity is 0.0016 Ω × cm, thermal conductivity is 1340 W/mK), a serpentine was alternatively placed directly on top of the waveguide. ITO heating element provides ~0.14 dB/µm of additional insertion losses and can provide enough heat for crystallization by applying 5-V train and around 20 V for producing amorphization. A main hurdle to the fabrication of this configuration is related to the ability of shaping ITO (lift-off). ITO can be properly engineered to have rather small values of 𝜅 [24], thus reducing the overall optical insertion losses. In the group of study, thanks to the superior W heating capacitance, we achieve the shortest crystallization (~ 1 µs, 20 pulses) and Maximum temperature in the O-PCM layer as a function of time for rectangular pulse heating. amorphization pulse (~ 1 µs) period as well as the lowest threshold voltage (Fig.7, Tab.2) This configuration has the drawback of introducing higher losses of ~0.1dB/µm due to the metal ohmic losses. Attention should be paid when implementing this electrothermal scheme when writing the memories with high bandwidth for avoiding carbonization of the GSST in proximity of the contact. A resistive heater optimized for efficient switching and contemporary not generating (12 V). 012 lMod/00.20.40.60.81PoutLπ= 3.48 µmGSS4-T1 basedElectro-opticmodulator in MZI configurationPCMBalanceLossesHeaterPlanarizedSi WGVaGSTcGSTTE ModeTM ModeΔnefffor TM Mode= 0.2017 -- 0.0433ineff= 2.162-0.0434ineff= 1.959 -- 1.02x10-4 ineff= 2.4589-7.7x10-5 ineff= 2.674-0.066i012345LAu(µm)010203040506070Extinction Ratio (dB)02468Insertion Losses (dB)Lπ= 3.84 µmLosses~ 3dBLC-GST100 %50 %50 %Laua)b)c)LaGSSTLcGSST100 %50 %50 %LweightLbalancea)b)insertion losses, can be made in doped silicon or in silicide, currently used in p-n modulator, positioned next to the waveguide. [25] Figure 3 3D rendering of a lateral thermoelectric switching configuration. A heating serpentine made tungsten (W) is deposited on the side of a Si waveguide on top of a GSST film. The electrical current running through the W circuit dissipates energy in form of heat inducing a local phase transition. Figure 6. Numerical study (COMSOL) of the electro-thermal switching at the equilibrium (top row) and normalized electric field mode profile (bottom row) of hybrid Si-GSST waveguide. Heat map produced by Joule heating of a tungsten (a,b) and ITO (c) heating element in Vertical (a, c) and lateral (b) configuration. In the electrothermal simulation represented in figure a-c) the GSST is amorphous. Lateral configuration (a) provides the highest local heat in a shorter time with limited additional losses to the propagating mode (TM). Table 2 Comparison of the different heating element configurations for inducing thermoelectric switching. The amorphization temperature is considered 900 K and the crystallization temperature is considered 547 K (for 60 µs, 10 pulses). Pulse duration (Crystallization) Voltage (Crystallization) Pulse duration (Amorphization) Voltage (Amorphization) Insertion Losses TM Mode [dB/µm] Configuration W, Lateral W, Vertical ITO, on top Multiple (20)pulses <1 µs Multiple (20)pulses < 3 µs Multiple (2 0)pulses < 3 µs 5 V ~ 1 µs 12 V ~2 µs < 2.5 µs 25 25 V 0.11 dB/µm 0.06 dB/µm 0.14 dB/µm Figure 7 Electro-thermal switching from crystalline to amorphous (a) and vice versa (b) through Joule heating in a lateral W configuration. Temperature average in the GSST layer as a function of time for rectangular pulse wave heating. The amorphization temperature is the melting temperature (>900K) while the temperature for crystallization (~523K but below amorphization temperature) is kept approximately constant for 20µs. D. Network In this section we trained g The NN architecture that exploits the proposed non- volatile weighed addition can be emulated on an open source ML framework, i.e. Tensorflow. As preliminary study, we estimated the functionality of the proposed perceptron as main unit of the NN, by emulating its behavior in a 3-layer fully connected NN implemented in the Google Tensorflow tool and, as an initial example, for the MNIST data set, which is a well-known machine- learning data set comprised of 60,000 grayscale images of handwritten digits. Figure 8 a) Schematic of the fully connected network composed by 2 layers of 100 neurons. b) Accuracy results for the inference on unseen data for NN trained with 2% of noise. The first layer does not perform any type of weighting to the inputs, while the second layer in our network also has 100 neurons, which receive inputs from the first layer with an all to all connection (100x100) and perform weighting (nonlinear quantized during inference). Nonlinear activation functions (here considered as electro-optic[26-30]) two consecutive layers on each input connection (Fig. 8a). between are placed ßGSST filmWheaterSiwgàà273 K1000Ka)b)GSSTSiSiO2SiO2200nmW HeaterW, LateralW HeaterGSSTSiSiO2SiO2W, Verticalc)200nmITOGSSTSiSiO2SiO2200nmITO, Vertical200nmSiO2200nmSiO2200nmGSSTSiSiO2W HeaterW HeaterGSSTSiSiO2ITOGSSTSiSiO2MINMAXTemperatureE(a)(b)(c)(a)(b)(c)a)b)Inference accuracyNetworkschemeWe note, that whole PCMs seem as an ideal material to provide the synaptic weights, other emerging materials for modulation co-integrated with silicon photonics could be used as well such as those based on ITO, Graphene, for example [28, 31,32]. In addition, novel modulation schemes could be explored as well that an modulation concepts such as attojoule efficient modulators [33-36]. For the training and inference tests here, we have 100x100 NLAFs operating between the first and the second layer. The third layer reduces the dimensionality of the network and comprises just 10 neurons. The network is trained both without and with noise of the weights and NLAF. Our hypothesis, confirmed in a recent publication[6] and from preliminary studies on the network is that, when we allow for a certain amount of noise during the training, the model during the inference stage, becomes more robust; the effect of adding a noise equivalent to 0.01% of the maximum signal swing at the output of neurons significantly improves inference, as shown in Fig. 8b. Note, the addition of this amount of noise during the training may result in small (~2%) accuracy loss for low level of noise during inference (Fig. 8b) . However, the model becomes more robust to higher levels of noise while performing inference. This shows that modeling noise by adding training noise can fine-tune the network for a physical noisy realization. Lastly adding further amount of noise beyond the initial 0.1% results in lower (<60%) inference accuracy. One important limitation of the proposed photonic NN based on PCM comes from the bit-resolution of the signal after weighting, which just 32 states (considering a GSST layer with a lateral footprint of just 16 µm). Specifically, the weights in a first iteration of the network are restricted to be having 5-bit resolution. Additionally, in future works we will further study the effect of quantization of the weights while performing inference, since limiting the number of bits will simplify the complexity of the network implementation and reduce the number of states and consequently the overall footprint. We will also investigate the effect of 'pruning', by limiting the number of node-to-node connections to only the meaningful ones, aiming for reducing the network complexity without losing inference accuracy. To compensate the quantization error the solutions are manifolds and include; 1) increase the NN scale which provides greater expressive power, 2) adopt advanced quantization algorithms the furthermore 3) information during gradually add the quantization constraints in a training- retraining flow which helps to converge to a better local optimum in the training. training, and is quantized to better represent in III. CONCLUSIONS AND OUTLOOK In summary, we have investigated a low losses programmable Mach Zehnder modulator, based on a tested thermal transient response of the quantized the extinction for maximizing hybrid GSST-silicon waveguide, which showed a coherent quantized response as function of the portion of the phase change material that has been written by means of electrothermal switching. Furthermore, we modeled the three distinct electrothermal heating configuration based on Joule heating. The photonic memory displays a quantized response of 3-bit in an extremely compact footprint of only 3.8µm, complemented by very small insertion losses, below 3dB, attributed primarily to the balancing mechanism ratio. Moreover, the studied platforms provide insights into the speed of a photonic tensor processor architecture based on integrated photonic memories which stores the weights of a trained neural network and can be updated in parallel at sub MHz speed. The proposed optical module responses were used as weighting for a fully connected neural networks, emulated in Tensor Flow. We transfer function on a standardized neural network training set, MNIST classifiers of handwritten digits. Our results show that the neural network reaches very high level of accuracy in the inference phase and sufficiently robust. The simple and yet powerful architecture is a promising solution for optical information processing and vector matrix multiplication when performing inference, given that light is just attenuated (e.g. filtered) in a completely passive fashion and the operating speed of the entire network is limited only by the time of flight of the photon in the integrated platform. Also, each bit of the node has the potential to be intrinsically reconfigured, thence altering the weights and updating the neural network after successive trainings. Therefore, the proposed engine has the potential to significantly outperform in terms of computing speed and energy efficiency the established electronics or electro-optics technology. We envision that frequency selective memories based on GSST can improve the integrated all optical writing and the parallelism and consequently opening new frontiers in optical computing and communication [37], but could also be used in photonic analog comput2 systems such as partial differential equation solvers [38]. ACKNOWLEDGMENT V.S. is supported by the Presidential Early Career (PECASE) for Scientist and Engineers Award nominated by the Department of Defense (AFOSR). REFERENCES [1] S. Sun, V. K. Narayana, T. El-Ghazawi, and V. J. Sorger, "Chasing Moore's Law with CLEAR," in Conference on Lasers and Electro-Optics (2017), paper JW2A.138, 2017, p. JW2A.138. [2] N. P. Jouppi et al., "In-Datacenter Performance Analysis of a Tensor Processing Unit," in Proceedings of the 44th Annual International Symposium on Computer Architecture, New York, NY, USA, 2017, pp. 1 -- 12. [3] Y. 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1802.07719	2	1802	2018-09-20T16:42:00	Unlimited Accumulation of Electromagnetic Energy Using Time-Varying Reactive Elements	[ "physics.app-ph" ]	Accumulation of energy by reactive elements is limited by the amplitude of time-harmonic external sources. In the steady-state regime, all incident power is fully reflected back to the source, and the stored energy does not increase in time, although the external source continuously supplies energy. Here, we show that this claim is not true if the reactive element is time-varying, and time-varying lossless loads of a transmission line or lossless metasurfaces can accumulate electromagnetic energy supplied by a time-harmonic source continuously in time without any theoretical limit. We analytically derive the required time dependence of the load reactance and show that it can be in principle realized as a series connection of mixers and filters. Furthermore, we prove that properly designing time-varying LC circuits one can arbitrarily engineer the time dependence of the current in the circuit fed by a given time-harmonic source. As an example, we theoretically demonstrate a circuit with a linearly increasing current through the inductor. Such LC circuits can accumulate huge energy from both the time-harmonic external source and the pump which works on varying the circuit elements in time. Finally, we discuss how this stored energy can be released in form of a time-compressed pulse.	physics.app-ph	physics	Unlimited Accumulation of Electromagnetic Energy Using Time-Varying Reactive Elements Department of Electronics and Nanoengineering, Aalto University, P.O. Box 15500, FI-00076 Aalto, Finland M. S. Mirmoosa, G. A. Ptitcyn, V. S. Asadchy and S. A. Tretyakov (Dated: September 21, 2018) Accumulation of energy by reactive elements is limited by the amplitude of time-harmonic external sources. In the steady-state regime, all incident power is fully reflected back to the source, and the stored energy does not increase in time, although the external source continuously supplies energy. Here, we show that this claim is not true if the reactive element is time-varying, and time- varying lossless loads of a transmission line or lossless metasurfaces can accumulate electromagnetic energy supplied by a time-harmonic source continuously in time without any theoretical limit. We analytically derive the required time dependence of the load reactance and show that it can be in principle realized as a series connection of mixers and filters. Furthermore, we prove that properly designing time-varying LC circuits one can arbitrarily engineer the time dependence of the current in the circuit fed by a given time-harmonic source. As an example, we theoretically demonstrate a circuit with a linearly increasing current through the inductor. Such LC circuits can accumulate huge energy from both the time-harmonic external source and the pump which works on varying the circuit elements in time. Finally, we discuss how this stored energy can be released in form of a time-compressed pulse. I. INTRODUCTION Recently, time-space modulated structures attracted significant interest especially in realizing magnetless non- reciprocal devices. However, most of the studies have been limited to time-harmonic modulations, extending the classical results on mixers and parametric ampli- fiers. In this paper we look at new possibilities which can open up if we allow arbitrary time modulations of structure parameters (circuit reactances, material per- mittivity, etc). We expect that this approach may allow overcoming a number of important limitations inherent to conventional, harmonically modulated elements. As an interesting for applications example we consider cap- turing, accumulating, and storing of electromagnetic en- ergy. The use of conventional lossless reactive elements for energy accumulation is not efficient. Based on the circuit theory, we know that two fundamental reactive elements, the inductance and capacitance, store electromagnetic energy. If a time-varying current source i(t) is connected to an inductor L, the stored magnetic energy equals Wm(t) = Li(t)2/2. Replacing the inductor by a capaci- tor C and employing a time-varying voltage source v(t), we can store electric-field energy We(t) = Cv(t)2/2 [1]. Obviously, the stored energy is indeed limited by the source. To accumulate larger energy we need to have sources with larger output current or voltage. Even more importantly, most practically available sources whose energy we can harvest provide time-periodical (in par- ticular, time-harmonic) output. In the case of time- harmonic sources (i(t), v(t) = A cos(ωt), where ω and A represent the angular frequency and the amplitude, respectively), the stored energy is fluctuating between zero and A2L/2 (inductor fed by a current source) or A2C/2 (voltage-source fed capacitor). Therefore, the maximum amount of energy we can exploit is at t = nT , where n = 1, 2, 3, . . . (T denotes the period), and it is completely determined by the amplitude of the external source. Now, the intriguing question which we consider here is if we can exceed this limitation for time-harmonic sources and continuously accumulate the energy supplied by the source in some reactive elements. The fundamental prob- lem here is to eliminate reflections from a reactive load, so that all the incident power will be accumulated in the load and made available at some desired moment of time. If it is possible to control the time dependence of the external source, this problem can be solved by mak- ing the external voltage or current exponentially growing in time [2]. Here, we are interested in more practical scenarios when the external source cannot be controlled (for instance, energy harvesting). Thus, we assume that the external source provides a given time-harmonic out- put and introduce solutions employing time-dependent reactive elements L(t) and/or C(t). Note that the dis- cussion here equally applies to circuits, waveguides, or waves incident on lossless boundaries, because in each of these cases the reflection and absorption phenomena can be modeled using an equivalent reactive load impedance. Generally speaking, the use of time-varying elements in electronic circuits [3 -- 11] as well as time-varying mate- rial properties [12 -- 22] (usually, time-varying permittiv- ity) for engineering wave propagation have been attract- ing the researchers' attention since approximately 1960s till today. These works are mainly focused on achieving nonreciprocity, amplification and frequency conversion. Here, we use time-varying reactive elements for energy accumulation. While in most of the earlier studies, peri- odical time variations of circuit elements have been used, for our goals we will need to consider arbitrary time vari- ations of parametric elements. The paper is organized as follows: In Section II, we apply the transmission-line theory and find the required condition to have zero reflection (unlimited accumula- tion of energy) in a line that is terminated by a single time-modulated reactive load. Subsequently, we eluci- date our result by drawing an analogy between our time- modulated load and two different scenarios explained in the parts A and B of Section II, respectively. In Sec- tion III, we go one step further and consider a load which comprises two time-varying reactive elements that are in parallel with each other. In contrast to the case studied in Section II, here we show that it is possible to engineer the electric currents flowing through the elements while we still obtain zero reflection. We explain how engineering the electric currents affects the amount of energy accumu- lated by the entire load. Finally, Section IV concludes the paper. This paper is our first step that hopefully opens a way for further work on systems with arbitrary time modulations of parameters and, in particular, for prac- tical investigations of efficient devices which accumulate energy from time-periodical, low-amplitude sources. We expect that the use of non-harmonic time modulations of system parameters will offer other, more general means to shape system response at will. II. ZERO-REFLECTION FROM TIME-MODULATED REACTIVE ELEMENTS For a linear and time-invariant transmission line fed by a time-harmonic voltage/current source, the supplied energy is fully transferred to the load if the characteristic impedance of the line is equal to the load impedance of that line [23]. Apparently, for the case of a lossless line terminated by a conventional inductance or capacitance, the energy is entirely reflected back as the incident wave arrives at the load, and therefore, there is no absorption nor accumulation of energy in the load. Mathematically, this property follows from the fact that the characteristic impedance of the line is real while the load impedance is purely imaginary (reactive). It is easy to see that making the load reactance vary in time, it is possible to emulate resistance, although there is no actual power dissipation or generation. Indeed, the voltage over a capacitor/inductor and the current flowing through the element are related to each other as vL(t) = L(t) iC(t) = C(t) diL(t) dt dvC(t) dt + + dL(t) dt dC(t) dt iL(t), (1) vC(t), where vL,C(t) and iL,C(t) denote the instantaneous volt- age and current in a time-varying inductor or capacitor, respectively. Conventionally, when the element is time- independent, the second term in the above equations ( dL(t) dt ) vanishes and therefore, the voltage and dt current are proportional by a factor which is purely imag- inary in the frequency domain. However, the scenario is completely different as the inductance/capacitance ele- ment varies with respect to time. The second term is or dC(t) 2 not zero any more and it has the form of the usual Ohm law, where the role of the resistance or conductance is played by the time derivatives of the circuit reactances. Clearly, this virtual resistance or conductance describes virtual absorption of energy, which can be actually ac- cumulated in the reactive element. Next, we will study how this possibility can be exploited for accepting and accumulating incident energy in reactive elements. Let us consider a lossless transmission line loaded by a time-varying inductance L(t) and denote the voltage of the wave propagating towards the load as v+(t). The reflected voltage wave is denoted by v−(t). The instan- taneous voltage over the load and the current flowing through the load are written as vL(t) = v+(t) + v−(t), v+(t) − v−(t) iL(t) = , R0 (2) where R0 represents the characteristic impedance of the line. On the other hand, the voltage and the current are related to each other by Eq. (1). Substituting Eq. (1) into Eq. (2), we derive a general formula for the incoming and reflected waves at the load position as (3) (cid:20) dL(t) (cid:20) dL(t) dt dt L(t) L(t) dv−(t) dt dv+(t) dt + + (cid:21) (cid:21) + R0 − R0 v−(t) = v+(t). In this equation, the left-hand side contains the terms measuring the reflected wave, while the right-hand side depends on the incident voltage v+(t) only. For a given incident voltage v+(t) and any time-dependent induc- tance L(t) we can find the reflected wave by solving the above first-order differential equation. Using Eq. (3) we can find ways to manipulate the reflected wave by choos- ing the proper function for L(t). Here, we are interested in accumulating all the incident energy, that is, we are interested in reactive loads which do not reflect. is Now, assume that the incoming signal time- harmonic, written as v+(t) = A cos(ωt). In the following, the amplitude and the initial phase of the incident wave are supposed to be unity and zero, respectively, just for simplicity of formulas. Requiring absence of reflection (v−(t) = 0), we find the corresponding time dependence of L(t) from Eq. (3). Here, it is worth noting that the time-harmonic current in the load is in phase with the incident voltage in case of zero reflection, as is obvious from Eq. (2). The result reads L(t) = R0 ω tan(ωt). (4) Such inductance as a load virtually absorbs all the input energy. Similar considerations can be made for loads in form of time-varying capacitance or other reactive loads. In the following, we explain the reason why the time- varying inductance described by Eq. (4) gives rise to the 3 FIG. 1. (a) -- Transmission line terminated by a time-dependent inductance which absorbs the incoming energy. The bottom illustration shows its conceptual realization by a short-circuited line whose length extends with a constant velocity. (b) -- Energy releasing by the same line but with different inductance modulation (inverse with respect to moment t0). This means that in its conceptual realization, the load is moving in the opposite direction. virtual absorption. To do this, we make an analogy be- tween the inductance and a short-circuited line whose length is linearly increasing versus time. In addition, we also draw another analogy between the inductance and a load consisting of an infinite number of sinusoidal induc- tances connected in series. A. Short circuited line To understand the physical meaning of the result ob- tained above, we can notice a similarity of this formula (Eq. (4)) with the classical formula for the input reac- tance of a short-circuited transmission line: Zin = jR0 tan(kl), (5) where k = ω/c (c denotes the phase velocity) is the phase constant and l represents the length of the line. Obvi- ously, the time-varying inductance L(t) given by (4) is the same as that seen at the input port of a lossless short- circuited transmission line if the length of the transmis- sion line is linearly increasing with the constant velocity equal to c, since in this case Zin = jR0 tan(kl) = jωL(t) (see Fig. 1(a)). We see that in this conceptual scenario the reason for having no reflection from a lossless load is that the incident wave never reaches the reflecting ter- mination, since the short is moving away from the input port with the same velocity as the phase front of the incident wave. Thus, varying the load inductance as pre- scribed by (4) for enough long time one can accumulate theoretically unlimited field energy in the reactive load. Let us now assume that we would like to release the stored energy. To do that, we would reverse the direction of the velocity of the short, i.e. moving towards the input port (see Fig. 1(b)). All the energy stored in the line volume will be compressed in time and released into the feeding line at the moment when the length of the short circuited line becomes zero. The reactance of the line would correspond to a time-varying inductance given by L(t) = R0 ω tan(2ωt0 − ωt), t0 < t < 2t0, (6) in which t0 is the moment when the velocity of the short changes the direction and consequently, the short moves backward. Based on our analogy between the time- varying inductance and the short-circuited line whose length changes versus time, we conclude that the time- modulated inductance is expressed as LA(t) = LR(t) = R0 ω R0 ω 0 < t < t0, tan(ωt), tan(2ωt0 − ωt), (7) t0 < t < 2t0. 𝑐𝑍in=𝑗𝑅0tan[𝑘𝑙𝑡]𝑙𝑡=𝑐𝑡𝑐𝑍in=𝑗𝑅0tan[𝑘𝑙𝑡]𝑙𝑡=𝑐𝑡0−𝑐(𝑡−𝑡0)(a)(b)𝐿𝑡+−𝑣L𝑡𝑖L𝑡𝑣−𝑡=0𝑣+𝑡𝑅0𝐿𝑡+−𝑣L𝑡𝑖L𝑡𝑣−𝑡𝑣+𝑡=0𝑅04 regime, we add a resistance (RL) to the load in order to see the effect of ohmic losses. This load resistance is con- nected in series with the time-varying inductance. We have simulated again the structure in Fig. 1(a) and ob- served that if the load resistance is smaller than about 2% of the characteristic impedance of the transmission line (1 Ohm for our example of a 50-Ohm line), the re- flected wave is still near zero and the system works quite well. For resistances larger than 1 Ohm (RL > 1Ω), some reflection appears and the efficiency decreases. Interestingly, it is in fact possible to eliminate any re- flections also for lossy terminations (with arbitrary val- ues of RL) by a simple modification of the modulation function of the time-varying inductance LA(t). This way we can compensate the resistive losses completely. In- deed, if we rewrite Eq. (3) by assuming that there is also the resistance RL at the termination, we see that the re- quired time-varying inductance to obtain zero reflection becomes (cid:18) (cid:19) LA(t) = R0 ω 1 − RL R0 tan(ωt), 0 < t < t0. (8) According to the above expression, if RL = 0, we will achieve the same result as given by Eqs. (4) or (7). Note that if RL = R0, then the modulated inductance needed to eliminate reflections is zero because in this limiting case the load is already perfectly matched to the trans- mission line (perfect absorption condition). Our simula- tions have confirmed that the modification of the mod- ulation function given by Eq. (8) indeed results in zero reflection in the accumulating regime for different values of loss resistance RL. Similar effects of energy accumulation and release can be achieved using a transmission line periodically loaded with switches which can be switched at the appropri- ate time moments, as required by Eq. (5). Figure 3 schematically shows realization of this concept. Let us consider an incident signal in form of periodic pulses of amplitudes i0 and durations ∆t. Prior to time moment t = M ∆t, the pulses enter the transmission line and propagate along the line without any reflections because all the switches are open. When the first (leading) pulse approaches switch S1 at time t = M ∆t, it closes and the pulse reflects and starts propagating in the opposite di- rection. Due to the properly adjusted distance between the switches, at moment t = (M + 1)∆t, the first pulse is summed up (constructive interference) with the second pulse which has been reflected by switch S2. The ampli- tude of the resulting pulse is doubled: 2i0. Likewise, at the position of each next switch the leading pulse ampli- tude is increased by i0, resulting in the output pulse with amplitude M i0. In this scenario, the total energy entered the transmission line, proportional to M i2 0, is compressed into a single pulse with energy (M i0)2. This is not a pas- sive design since, due to the energy conservation, extra work proportional to (M 2 − M )i2 0 is required for closing the switches. (a) (b) FIG. 2. (a) -- Time-modulated inductance, as the load of the transmission line, in the accumulation and releasing regimes. (b) -- The incident and reflected waves (simulated and theoret- ical) at the load position. Here, notice that R0 = 50 Ω and v+(t) = 50 cos(ωt) V where ω = 0.5 rad/sec. Here, LA(t) and LR(t) represent the time-modulated in- ductances in accumulation and releasing regimes, respec- tively. It is clear that the function describing LR(t) is the mirror of the function describing LA(t) with respect to the moment t = t0. We have simulated the system illustrated by Fig. 1(a) (top one) utilizing MathWorks Simulink software. We assume that our system accumulates the energy till the moment t0 = 2.5 s and subsequently, it releases the en- ergy till the moment t = 2t0 = 5 s. The modulation function for the reactive element expressed by Eq. (7) is shown in Fig. 2(a), and the simulated and theoreti- cal results for the reflected wave are shown in Fig. 2(b). Notice that the theoretical formula for the reflected wave can be obtained using Eq. (3). The blue color in Fig. 2(b) corresponds to the incident wave [v+(t) = 50 cos(ωt) V] while the red/yellow color represents the reflected wave. As it is seen, the reflection is zero till t0 = 2.5 s mean- ing that the reactive element stores the electromagnetic energy (virtual absorption). After t = t0, the reflection appears and we are in the releasing regime. The theo- retical and simulated results for the reflected wave are in good agreement. Let us next consider the effects of inevitable dissipation losses in the system. Concentrating on the accumulating 012345Time [Sec]0100200300L(t) [H]12345Time [Sec]-100-50050100v(t) [V]v+Theoretical v-Simulated v-5 Equation (11) shows that the nth time-dependent in- ductance operates as a mixer in which the input of this mixer is a time-harmonic current signal of the frequency ω having the amplitude equal to A/R0 producing as the output two time-harmonic voltage signals of frequencies (2n ± 1)ω and the amplitude of (2n ± 1)A. The output signal can be amplified or attenuated depending on the integer number of the inductance element (it is amplified if 2n ± 1 > 1 ). R0 not canceled in the series vL(t) =(cid:80) By substituting n = 1, 2, 3, ... in Eq. (11), we realize that only the first harmonic corresponding to n = 1 is n=1 vn(t) (which in the usual sense does not convergence). The second term of v1(t) = A[cos(ωt) + 3 cos(3ωt)] cancels out with the first term of v2(t) = A[−3 cos(3ωt)− 5 cos(5ωt)], and the second term of v2(t) is canceled by the first term of v3(t), and so on. Hence, only the first term A cos(ωt) of v1(t) survives. Since the amplitude of this term is equal to the amplitude of the total voltage vL(t), the reflection coeffi- cient equals zero. Here, it is worth mentioning that if we have a finite number of the time-dependent inductances shown in the figure, we can still emulate full absorption. From the above considerations we see that only the first harmonic ω and the harmonic (2n + 1)ω remain. The other harmonics automatically vanish. Thus, to emulate full absorption, we only need to remove the (2n + 1)ω harmonic by using a low-pass filter. If we do not filter this harmonic, certainly, the reflection is not zero. III. TIME-DEPENDENT PARALLEL LC CIRCUIT In the previous scenario with one reactive element, the electric current was limited by the characteristic impedance of the line and the amplitude of the incoming wave (i(t) = A cos(ωt)/R0). The intriguing question is if it is possible to realize any (growing) function for the electric current flowing through the time-varying reactive element. Next we will show that it is indeed possible if the time-varying reactive load contains at least two re- active elements, one inductive and one capacitive. Hav- ing two connected circuit elements we have an additional degree of freedom to shape the electric current flowing through these components since (assuming parallel con- nection) only the sum of the two currents should be equal to i(t) = A cos(ωt)/R0 in order to ensure zero reflection. In this section we discuss the design of such circuits and investigate the stored energy in the system. Let us consider a transmission line terminated by a parallel LC-circuit which is formed by time-dependent components L(t) and C(t). Schematic of the circuit is il- lustrated by Fig. 5(a). Suppose that the incident voltage wave is v+(t) = A cos(ωt) and the total electric current is i(t) = A cos(ωt)/R0 (no reflection). Here, iL(t) denotes the current through the inductance and iC(t) denotes the current through the capacitance. Based on Kirchhoff's current law, i(t) = iL(t) + iC(t). This condition is ful- FIG. 3. Space-time modulated transmission line with M switches. Each switch is closed at specific time moments shown in blue color. Amplitudes of the signal at different locations of the transmission line at different time moments are depicted in red color. B. Load consisting of sinusoidal inductances Another way to understand why the time-modulated inductance given by Eq. (4) ensures full virtual absorp- tion is applying the Fourier series analysis. Since the re- quired time-dependent load inductance given by Eq. (4) is a periodical function, we can expand it in the Fourier series. We know that tan(x) = 2 (−1)n−1 sin(2nx). (9) n=1 Using the above equation, we can consider the time- dependent inductance as an infinite collection of har- monically modulated inductances which are connected in series, as is illustrated in Fig. 4. Let us assume that the voltage over the whole load in the figure is vL(t) = A cos(ωt) and the current flowing through the load is iL(t) = A cos(ωt)/R0. Based on the Kirch- n=1 vn(t), where vn(t) is the voltage over each time-dependent inductance. Therefore, hoff voltage law, the voltage vL(t) =(cid:80) vn(t) = Ln(t) diL(t) dt + dLn(t) dt iL(t), (10) in which Ln(t) = 2(−1)n−1 R0 Eq. (10), we find that ω sin(2nωt). Simplifying vn(t) = A(−1)n−1 (2n − 1) cos((2n − 1)ωt)+ (cid:21) (11) (2n + 1) cos((2n + 1)ωt) . (cid:88) (cid:20) 𝑐Δ𝑡S1𝑡=𝑀Δ𝑡S2𝑡=(𝑀+1)Δ𝑡S𝑀𝑡=(2𝑀−1)Δ𝑡S3𝑡=(𝑀+2)Δ𝑡𝑐Δ𝑡𝑐Δ𝑡𝑡=(1,3,…,2𝑀−1)Δ𝑡𝑖0𝑡=(𝑀−2,𝑀,𝑀+2)Δ𝑡𝑡=(𝑀−1,𝑀+1)Δ𝑡𝑡=𝑀Δ𝑡𝑖0𝑖0𝑖0𝑖0𝑡=𝑀Δ𝑡2𝑖0𝑡=(𝑀+1)Δ𝑡3𝑖0𝑡=(𝑀+2)Δ𝑡𝑡=(2𝑀−1)Δ𝑡𝑀𝑖06 FIG. 4. Transmission line terminated by an infinite number of time-dependent inductances connected in series. filled by setting the currents as iL(t) = iC(t) = A cos(ωt) 2R0 A cos(ωt) 2R0 + f (t), − f (t), (12) (a) (b) FIG. 5. L(t)C(t)-circuit. realization of zero reflection regime. (a) Transmission line terminated by a parallel (b) Values of L(t) and C(t) required for in which f (t) can be an arbitrary function of time. As an example, we consider f (t) as a linearly growing function f (t) = I0t in which I0 > 0 (this is only due to the sim- plicity of the function, here any differentiable function can be assumed). Applying Kirchhoff's laws and using Eq. (12), we can find the required time dependences of the circuit elements. After some algebraic manipulations, we obtain the following expressions: (cid:18) (cid:19) , L(t) = 2R0 A sin(ωt) ω A cos(ωt) + 2R0I0t (13) C(t) = tan(ωt) 2R0ω − I0t2 2A cos(ωt) . As the above equation shows, the capacitance always pos- sess asymptotes due to the tangent function. However, depending on the ratio between R0I0 and the angular fre- quency ω (R0I0/ω), the inductance can be finite without having an asymptote. For example, Fig. 5(b) shows the functions of L(t) and C(t) for R0 = 1 Ω, ω = 1 rad/sec, A = 1 V and I0 = 1 A/sec. At the initial moment, both elements are positive and growing. However, later the in- ductance decreases and goes to zero fluctuating around it due to the term sin(ωt) in the numerator. Modulating the elements in time as expressed in Eq. (13), no energy is reflected back to the source and all the input energy is continuously accumulated in the LC circuit. However, the reactances exchange energy also with the device which modulates their values in time. Thus, we need to consider the power balance and find 𝐿1𝑡+−𝑣1𝑡𝑖L𝑡𝑣−𝑡=0𝑣+𝑡𝑣2𝑡𝑣𝑛𝑡𝑣L𝑡++−−𝐿2𝑡𝐿𝑛𝑡+−𝐿𝑛𝑡=−1𝑛−12𝑅0𝜔sin(2𝑛𝜔𝑡)𝐿𝑡+−𝑣𝑡𝑖𝑡𝑣+𝑡𝑣−𝑡=0𝑖𝐶𝑡𝑖𝐿𝑡𝐶𝑡0123Time [Sec]-1-0.8-0.6-0.4-0.200.20.40.60.81Inductance [H]-5-4-3-2-1012345Capacitance [F]L(t)C(t)7 moment when we stop modulation and energy accumula- tion. For the RLC circuit in Fig. 6(a), we can write the second-order differential equation in form LC d2iL(t) dt2 + L R diL(t) dt + iL(t) = 0. (14) Regarding the voltage over the elements, we know that v(t) = LdiL(t)/dt. Solving the characteristic equation of the RLC circuit, we obtain the electric current iL(t) as where iL(t) = A1eS1t + A2eS2t, (15) −L ± √ L2 − 4R2LC 2RLC S1,2 = . (16) In Eq. (15), A1 and A2 are unknown coefficients which can be found by imposing the initial conditions, i.e. the current flowing through the inductance and the voltage over the capacitance should be continuous. In other words, (cid:20) A cos(ωt0) 2R0 (cid:21) iL(t) = + I0t0 = α, (cid:12)(cid:12)(cid:12)(cid:12)t=t0 (cid:12)(cid:12)(cid:12)(cid:12)t=t0 diL(t) dt = A cos(ωt0) L = β. (17) According to Eqs. (15) and (17), the coefficients A1 and A2 can be written as A1 = A2 = β − αS2 β − αS1 S1et0S1 − S2et0S1 S2et0S2 − S1et0S2 , . (18) Knowing the electric current iL(t), we can calculate the resistance voltage and finally the instantaneous power as p(t) = v(t)2/R and the total released energy by inte- grating the instantaneous power from t0 to infinity. This energy is the one that we can extract and use after stop- ping the modulation. Note that since at t0 = π/(4ω) the values of L and C are such that S1 and S2 are real and not equal, the RLC circuit is over-damped. The time dependence of the instantaneous power is shown in Fig. 6(b). We find that the energy consumed by the re- sistance is about Wext ≈ 0.42 J. Let us compare this value with the energy delivered to the matched LC cir- cuit from the power source during the accumulation time from t = 0 till t = t0, which equals Wdel ≈ 0.64 J. Hence, the time-modulated load not only accumulated all the incident power but also accepted some power from the system which modulated the two reactances. The above example with t0 = π/(4ω) corresponds to a short energy-accumulation time. It is interesting to in- vestigate energy accumulations for longer times. Figure 7 shows that near t = 20.5 s, there is an asymptote for the capacitance function and the inductance is positive. Let (a) (b) FIG. 6. (a) -- The corresponding RLC-circuit after stopping temporal modulation. (b) -- The instantaneous voltage and the power consumed by the resistance R = 1 Ω. Notice that here, t0 = π/(4ω), ω = 1 rad/sec, R0 = 1 Ω, A = 1 V and I0 = 1 A/sec. how much energy is accumulated in the reactive circuit taking into account also the power exchange with the modulating system. To do this, we assume that the time modulation of the circuit elements stops at a certain time moment (t0) and the circuit inductance and capacitance do not depend on time at later times t > t0. This means that at t > t0 there is no power exchange with the sys- tem which modulates the reactances. At t = t0 we con- nect a parallel resistance to the LC circuit as shown in Fig. 6(a), to form a usual RLC circuit with time-invariant elements. We choose the moment t0 at which the induc- tance and capacitance are both positive and calculate the energy delivered to the resistor during the relaxation time. This energy is equal to the energy which has been accumulated in the time-modulated circuit during the time 0 < t < t0. The rate of releasing the stored en- ergy depends on the value of the resistance. If it is a small resistance, the accumulated energy is consumed in a short period of time. Let us choose t0 = π/(4ω) as the 𝐿+−𝑣𝑡𝑖𝑡𝑖𝐶𝑡𝐶𝑅𝑖𝐿𝑡1234Time [Sec]-1-0.8-0.6-0.4-0.200.20.40.60.81Voltage [V]-1-0.8-0.6-0.4-0.200.20.40.60.81Power [W]v(t)p(t)8 ered energy does not change much in these three cases (Wdel ≈ 10.2, 10.4 and 10.9 J), the energy which is ac- cumulated and then extracted changes dramatically. It is worth noting that the extracted energy can be much larger than the delivered energy, showing that the mod- ulated LC circuit accepts and accumulates energy also from the modulation source, in addition to the energy de- livered by the source feeding the transmission line. How- ever, stopping modulation and keeping L and C constant in time is only one way of extracting the energy. It is also possible to release the energy without stopping the mod- ulation. We must only change the modulation function. Hence, we can choose a proper modulation function such that all the energy accepted by the LC circuit from the modulation source will return to the modulation source. In other words, an equal exchange of energy happens between the LC circuit and the modulation source in the accumulating and releasing regimes. In this scenario, the delivered energy becomes equal to the released (ex- tracted) energy. IV. CONCLUSIONS In this paper, we have shown that properly time- variant reactive elements can continuously accumu- late energy from conventional external time-harmonic sources, without any reflections of the incident power. We have found the required time dependences of reac- tive elements and discussed possible realizations as time- space modulated transmission lines and mixer circuits. Interestingly, there is a conceptual analogy of energy- accumulating reactances and short-circuited transmis- sion lines where the short position is moving, which helps to understand the physical mechanism of energy accumu- lation and release. We have shown that properly modu- lating reactances of two connected elements it is in prin- ciple possible to engineer any arbitrary time variations of currents induced by time-harmonic sources. The study of the energy balance has revealed that such paramet- ric circuits accept and accumulate power not only from the main power source but also from the pump which modulates the reactances. This is seen from the fact that if we stop energy accumulation at some moment of time and release all the accumulated energy into a re- sistor, the released energy can be much larger than the energy delivered to the circuit from the primary source. These energy-accumulation properties become possible if the time variations of the reactive elements are not lim- ited to periodical (usually time-harmonic) functions, but other, appropriate for desired performance, time varia- tions are allowed. ACKNOWLEDGEMENT The authors would like to thank Dr. Anu Lehtovuori for useful discussions on circuits with varying parameters. (a) (b) FIG. 7. Time-dependent inductance and capacitance for R0 = 1 Ω, ω = 1 rad/sec, A = 1 V and I0 = 1 A/sec. us stop the reactance modulation at the following mo- ments: t01 = 20.7 s, t02 = 21.3 s, and t03 = 21.9 s, and connect a 0.01 Ω resistance to the time-invariant LC circuit at these moments. We choose such a small re- sistance value to release the accumulated energy quickly. Based on Eq. (16), because the value of the inductance is very small and the capacitance is very large, we ex- pect that S1,2 are complex and conjugate of one another: S1 = S∗ 2 . In other words, the circuit is under-damped. 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1803.01194	1	1803	2018-03-03T16:16:24	A Surface Impedance-Based Three-Channel Acoustic Metasurface Retroreflector	[ "physics.app-ph" ]	We propose the design and measurement of an acoustic metasurface retroreflector that works at three discrete incident angles. An impedance model is developed such that for acoustic waves impinging at -60 degrees, the reflected wave is defined by the surface impedance of the metasurface, which is realized by a periodic grating. At 0 and 60 degrees, the retroreflection condition can be fulfilled by the diffraction of the surface. The thickness of the metasurface is about half of the operating wavelength and the retroreflector functions without parasitic diffraction associated with conventional gradient-index metasurfaces. Such highly efficient and compact retroreflectors open up possibilities in metamaterial-based acoustic sensing and communications.	physics.app-ph	physics	A Surface Impedance-Based Three-Channel Acoustic Metasurface Retroreflector Chen Shen,1 Ana D´ıaz-Rubio,2 Junfei Li,1 and Steven A. Cummer1, a) 1)Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708, USA 2)Department of Electronics and Nanoengineering, Aalto University, P. O. Box 15500, FI-00076 Aalto, Finland (Dated: 5 November 2018) We propose the design and measurement of an acoustic metasurface retroreflector that works at three discrete incident angles. An impedance model is developed such that for acoustic waves impinging at -60 degrees, the reflected wave is defined by the surface impedance of the metasurface, which is realized by a periodic grating. At 0 and 60 degrees, the retroreflection condition can be fulfilled by the diffraction of the surface. The thickness of the metasurface is about half of the operating wavelength and the retroreflector functions without parasitic diffraction associated with conven- tional gradient-index metasurfaces. Such highly efficient and compact retroreflectors open up possibilities in metamaterial-based acoustic sensing and communications. PACS numbers: Valid PACS appear here Keywords: Retroreflector Metasurface Impedance model 8 1 0 2 r a M 3 ] h p - p p a . s c i s y h p [ 1 v 4 9 1 1 0 . 3 0 8 1 : v i X r a a)Electronic mail: [email protected] 1 Recent advances in acoustic metamaterials have revolutionized the manipulation of acous- tic waves1 -- 3. By carefully engineering the subwavelength scatterers embedded inside the metamaterials, one is able to control the acoustic waves in a fashion not attainable with natural materials. The two-dimensional equivalent of metamaterials, i.e., metasurfaces, have attracted significant attention recently due to their thin feature and extraordinary capability of redirecting incident waves. Numerous applications have been proposed based on the con- cept of acoustic metasurfaces, such as wavefront modulation4,5, sound absorption6 -- 8, asym- metric transmission9,10 and so on. In the scenario of reflection-based metasurfaces, the most extensively studied applications have been anomalous reflection11, negative reflection12,13, carpet cloaking14 and more. In most of these cases, metasurfaces are considered single- channel systems where the desired response is obtained for a single direction of illumination or within a narrow range around the designed direction. Recently, a new concept of metasurfaces has been proposed that treats them as multi- channel systems where different directions of illumination can be considered as channels15. One promising possibility offered by multichannel metasurfaces is to perform the retrore- flection functionality, i.e., incident waves from different directions can be reflected toward the impinging directions. By redirecting the incident energy into the original direction, such retroreflectors can find applications in free-space communications, remote sensing, and ob- ject detection and tracking. Literature on metasurface-based retroreflectors remains scarce in the field of acoustics16. In electromagnetics, retroreflectors have been proposed based on cat's eye geometries17 and Eaton lenses18. These reftroreflectors, however, are bulky with sizes much larger than the operating wavelength. Metasurface-based retroreflectors have been proposed that stack two layers of metasurfaces19. Their efficiency is limited, however, due to the dual-layer configuration. Despite the deep accumulated knowledge on single-channel retroreflectors (or isolating mirrors) such as blazed gratings at optical frequencies20, it was not until recently that a planar metasurface retroreflector was intro- duced in electromagnetics15. By tailoring the surface impedance profile, the metasurface can be designed to function as a retroreflector at multiple discrete angles. Such impedance-based flat retroreflectors avoid parasitic scattering and have high efficiency for multiple incident angles. In this paper, we investigate the possibilities of multichannel metasurface retroreflectors in acoustics. Based on the general surface impedance model21,22 and diffractive acoustics4,12, 2 we design a metasurface retroreflector that functions at three specific angles, namely -60, 0, and 60 degrees. By enforcing impedance matching and reciprocity, the design in princi- ple has 100% efficiency and no parasitic scattering occurs at the surface. The metasurface retroreflector can have potential applications in acoustic communications, sensing and de- tection. The schematic illustration of the metasurface retroreflector is shown in Fig. 1(a), where a flat metasurface extends in the x direction. The width of an individual unit cell and the periodicity of the metasurface are d and Γ, respectively. When the incident acoustic wave reaches the metasurface, it will be reflected toward the original incidence direction without any parasitic scattering. To ensure perfect efficiency, we require that all the incident energy is reflected with the pressure amplitude preserved. The incident and reflected acoustic pressure fields can therefore be written as: pi(x, z) = p0e−jkxxejkzz pr(x, z) = p0ejkxxe−jkzz (1) (2) where p0 is the amplitude of the incident wave, kx = k sin θi and kz = k cos θi are the x and z components of the wave number, with θi being the incident angle. k = ω/c is the free-space wave number, ω is the angular frequency and c is the sound speed in air. The surface impedance relating the incident and reflected waves can be found by: Zs = ptot(x, 0) −n · (cid:126)vtot(x, 0) (3) where n is the unit vector normal to the metasurface, ptot and (cid:126)vtot denote the total acoustic pressure and velocity. By recognizing that (cid:126)v = j∇p/ωρ, the surface impedance can be obtained as: Zs = j (4) Without loss of generality, we choose as an example θi = −60◦ as channel 1. The behavior of other channels (0◦ and 60◦) can be analyzed as following. From Eq. (4), the periodicity of the surface impedance is Γ = λ/(2 sin θi), and the wave vectors of the diffracted waves cot(ki sin θix) Z0 cos θi can therefore have the following tangential components: kxn = kx + 2πn/Γ, n ∈ Z (5) The corresponding reflection angles of different diffraction orders at a given angle of incidence can be found from θrn = sin−1 kxn/k. Figure 1(b) shows the reflection angle as a function of 3 (a) (b) FIG. 1. (a) Illustration of the operation principle of the three-channel metasurface retroreflector. All the incident energy is reflected back toward the original direction without parasitic scattering. The gray arrows represent the incident waves and the blue arrows represent the reflected waves. (b) Diffraction analysis of the metasurface. Blue, purple and green curves represent the -1st, 0th, and +1st diffraction orders. Dotted gray curve shows the requirement for an ideal retroreflector. The three channels are marked by red circles. the incident angle for different diffraction orders. It can be seen that since the periodicity Γ is small, the only allowed diffraction orders are n = −1, 0, 1. At channel 2, i.e., θi = 0◦, only one diffraction order of n = 0 represents a propagation mode and the channel is isolated from the other two diffraction orders. Therefore, at channel 2, the condition for retroreflection, i.e., θi = −θr is automatically satisfied. At channel 3, although n = 0 diffraction will result in a propagating mode with reflection angle θr = 60◦, it is prohibited by reciprocity. This is because for the reciprocal and passive system considered here, coupling from channel 3 to channel 1 is exactly the same as from channel 1 to channel 3. The acoustic waves at channel 3 will hence experience a n = −1 diffraction, with the reflected angle being θr = −60◦. The retroreflection condition is thus fulfilled at all three channels by engineering the surface impedance and diffraction of the metasurface properly. We now design the metasurface retroreflector using closed-end tubes23. For the selected incident angle of -60 degrees and operation frequency of 3000 Hz, it can be calculated from Eq. (4) that the periodicity of the metasurface is Γ = 6.6 cm. To implement the required surface impedance profile, each period is discretized into six unit cells, with the 4 FIG. 2. Requirement of the surface impedance profile for channel 1. The shadow region denotes a period and the red circles mark the discretized impedance by the unit cells of the metasurface. width being d = 1.1 cm. The height of each tube ln can be obtained through the relation Ztube = −jZ0 cot(kln), where n = 1 − 6 denotes the unit cell number. The first unit cell is positioned at x = 0.5d to avoid the extreme points, and the discretized impedance of the tubes is marked by circles in Fig. 2. The heights of the unit cells are 0.53 cm, 1.13 cm, 2.25 cm, 4.04 cm, 5.16 cm and 5.76 cm, respectively, all less than half of the operation wavelength at 3000 Hz. Since the closed-end tubes do not contain small channels or resonators, it is expected that the dissipation loss associated with this structure is low. In principle, other structures can also be used given that the impedance profile is satisfied. For example, space- coiling architectures4,24, helical structures25, shunted Helmholtz resonators26, etc. can also be adopted, and the overall thickness of the metasurface may be further reduced. Numerical simulations based on the finite element package COMSOL Multiphysics are then performed to validate the performance of the metasurface. The tubes are made of acrylonitrile butadiene styrene (ABS) plastic with density 1230 kg/m3 and sound speed 2230 m/s. The walls of the tubes are 1 mm thick and are assumed to be acoustically rigid since their impedance is much higher than that of the air. The corresponding acoustic fields are shown in Fig. 3, where a spatially modulated Gaussian beam illuminates the metasurface at the designed angles. The reflected waves interact with the incident beams and an interference pattern can be observed. By subtracting the incident waves from the 5 FIG. 3. Numerical simulations of the metasurface retroreflector. The top, middle and bottom panels show the incident, total and reflected acoustic fields. The blue and red arrows denote the incident and reflected beams, respectively. The inset shows the zoom-in field near the metasurface. total acoustic fields, the reflected fields can be obtained. It can be clearly seen that the incident energy is redirected into the original direction and the amplitude is preserved. The small imperfectness of the reflected fields (e.g., parasitic scatterings) can be caused by the discretization of the impedance profile and the non-negligible thickness of the tube walls. Interestingly, it can be observed that some additional evanescent components are excited near the metasurface at 60◦ and normal incidence. This is because at these angles, the reflected fields are formed by the diffraction on the metasurface, as shown in Fig. 1(b). However, the evanescent waves decay rapidly away from the metasurface and do not contribute to the far-field efficiency. In the −60◦ case the reflected field contains only one plane wave since it is defined by the surface impedance from Eq.(4). The excellent agreement between the theory and simulations indicates that the retroreflector can reach almost 100% efficiency by rerouting all the energy into the desired direction. The metasurface retroreflector is further validated with a 3D printing prototype. A portion of the fabricated sample is shown in the inset of Fig. 4. Each unit cell is connected to a back cavity so that the resulting metasurface has a flat surface. The back cavities are sealed with rigid printing material and are assumed to have no interaction with the incoming acoustic waves. The overall size of the sample is 80 cm by 6 cm, and the thickness is about half of the operation wavelength. The sample is situated in a 2D waveguide of 4 cm 6 FIG. 4. Experiment setup of the metasurface retroreflector. The starting line of the scan region is 1 cm away from the exiting surface (tube openings) of the metasurface. The inset shows a portion of the fabricated sample. FIG. 5. Measured acoustic pressure fields at 3000 Hz. Top panels show the incident acoustic fields, bottom panels show the reflected acoustic fields. height to ensure that only the fundamental mode can propagate inside. A loudspeaker array consisting of 28 individual transducers is placed in front of the sample for the generation of incident Gaussian beams with 20 cm width. Absorbing foams are used to reduce the reflections on the edges. The acoustic field distribution inside the scan region is captured by a moving microphone with the step of 2 cm. The size of the scan area is 100 cm by 24 cm. The loudspeaker array is moved so that the beam fully illuminates the sample at different incident angles. Figure 5 depicts the measured incident and reflected acoustic fields at different angles of incidence at 3000 Hz. Good agreement is observed between the numerical simulations and experiments, including the evanescent field pattern near the metasurface at normal incidence. The results confirm that the proposed metasurface can fully reflect the incident energy back toward its original direction without parasitic scatterings. To quantitatively study the performance of the metasurface retroreflector, the reflection 7 FIG. 6. Measured retroreflection efficiency of the metasurface at different angles of incidence. efficiency is analyzed as a function of frequency. The efficiency is computed by dividing the reflected energy toward the desired direction by the incident energy. Specifically, the incident and reflected energy are calculated by performing a spatial Fourier transform along the line exiting the metasurface. The overall measured efficiency is shown in Fig. 6, with the maximum efficiency close to 100%. The result well confirms the high efficiency and absence of parasitic scattering predicted by the theory. The peak frequency is slightly shifted from 3000 Hz to around 2900 Hz, which may be a result of fabrication errors. The efficiency is above 60% within a frequency band of about 500 Hz for the 60◦ and −60◦ cases and gradually decreases off the center frequency. This can be explained by the dispersive nature of the closed-end tubes, as the required impedance profile cannot be preserved when the frequency is far off the designed frequency. Remarkably, the efficiency for normal incidence is generally above 80% and is not dependent on the frequency of the incident waves. This is because the periodicity is small and channel 2 is isolated, as can be seen in Fig. 1(b). No other propagating modes are allowed for normal incidence as long as the periodicity remains small compared to wavelength, and only specular reflection occurs at the interface of the metasurface. The maximum efficiency is also slightly lower near peak frequency for the 0◦ case, which may be because the beam width is relatively small (Fig. 5) and the diffractions on the edges are more profound. To conclude, we have designed a high-efficiency three channel acoustic metasurface retroreflector that operates at three specific angles. The response of the metasurface is dic- 8 tated by the engineered surface impedance and diffraction. Such surface impedance-based design strategy can reduce unwanted scatterings and yield a high efficiency. The proposed retroreflector is verified both numerically and experimentally with a 3D printed prototype. Measurements show that the retroreflector reaches nearly 100% efficiency around the de- signed frequency. The device features a flat geometry and subwavelength thickness, and can be conveniently integrated into different scales or modified to work at other frequencies. The retroreflector can also in principle be extended for 3D wave propagation, or modified to have other functionalities such as anomalous reflection22. Such a compact, multi-channel and high efficient retroreflector is hoped to be useful in acoustic sensing and communications. ACKNOWLEDGMENTS This work was supported by the Multidisciplinary University Research Initiative grant from the Office of Naval Research (N00014-13-1-0631) and in part by the Academy of Finland (projects 13287894 and 13309421). REFERENCES 1S. A. Cummer, J. Christensen, and A. Al`u, Nat. Rev. Mater. 1, 16001 (2016). 2G. Ma and P. Sheng, Sci. Adv. 2, e1501595 (2016). 3H. Ge, M. Yang, C. Ma, M.-H. Lu, Y.-F. Chen, N. Fang, and P. Sheng, Natl. Sci. Rev. 4, nwx154 (2017). 4Y. Xie, W. Wang, H. Chen, A. Konneker, B.-I. Popa, and S. A. Cummer, Nat. Commun. 5, 5553 (2014). 5K. Tang, C. Qiu, M. Ke, J. Lu, Y. Ye, and Z. Liu, Sci. Rep. 4, 6517 (2014). 6G. Ma, M. Yang, S. Xiao, Z. Yang, and P. Sheng, Nat. Mater. 13, 873 (2014). 7X. Cai, Q. Guo, G. Hu, and J. Yang, Appl. Phys. Lett. 105, 121901 (2014). 8Y. Li and B. M. Assouar, Appl. Phys. Lett. 108, 063502 (2016). 9C. Shen, Y. Xie, J. Li, S. A. Cummer, and Y. Jing, Appl. Phys. Lett. 108, 223502 (2016). 10Y. Li, C. Shen, Y. Xie, J. Li, W. Wang, S. A. 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Opt. 45, 5795 (2006). 21V. S. Asadchy, M. Albooyeh, S. N. Tcvetkova, A. D´ıaz-Rubio, Y. Ra'di, and S. A. Tretyakov, Phys. Rev. B 94, 075142 (2016). 22A. D´ıaz-Rubio and S. A. Tretyakov, Phys. Rev. B 96, 125409 (2017). 23L. E. Kinsler, A. R. Frey, A. B. Coppens, and J. V. Sanders, Fundamentals of Acoustics, 4th ed. (Wiley-VCH, 1999). 24Y. Xie, A. Konneker, B.-I. Popa, and S. A. Cummer, Appl. Phys. Lett. 103, 201906 (2013). 25X. Zhu, K. Li, P. Zhang, J. Zhu, J. Zhang, C. Tian, and S. Liu, Nat. Commun. 7, 11731 (2016). 26Y. Li, X. Jiang, B. Liang, J. Cheng, and L. Zhang, Phys. Rev. Appl. 4, 024003 (2015). 10
1912.02321	1	1912	2019-12-05T00:31:01	Effect of Proton Irradiation Temperature on Zinc Oxide Metal-Semiconductor-Metal Ultraviolet Photodetectors	[ "physics.app-ph", "cond-mat.mtrl-sci", "physics.ins-det" ]	The electrical and structural characteristics of 50 nm zinc oxide (ZnO) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. We irradiated the devices with 200 keV protons to a fluence of 1016 cm-2. Examination of the X-ray diffraction (XRD) rocking curves indicates a strongly preferred (100) orientation for the grains of the as-deposited film, with decreases in crystal quality for all irradiated samples. In addition, peak shifts in XRD and Raman spectra of the control sample relative to well-known theoretical positions are indicative of tensile strain in the as-deposited ZnO films. We observed shifts of these peaks towards theoretical unstrained positions in the irradiated films relative to the as-deposited film indicate partial relaxation of this strain. Raman spectra also indicate increases of oxygen vacancies (V_O ) and zinc interstitials (Zn_i ) relative to the control sample. Additionally, photocurrent versus time measurements showed up to 2x increases in time constants for samples irradiated at lower temperatures months after irradiation, indicating that the defects introduced by suppression of thermally-activated dynamic annealing process has a long-term deleterious effect on device performance.	physics.app-ph	physics	Effect of Proton Irradiation Temperature on Zinc Oxide Metal- Semiconductor-Metal Ultraviolet Photodetectors Thomas A. Heuser,1 Caitlin Chapin,2 Max Holliday,1,2 Yongqiang Wong,3 and Debbie G. Senesky2,4 1Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA 2Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305, USA 3Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA 4Material Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA The electrical and structural characteristics of 50 nm zinc oxide (ZnO) metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors subjected to proton irradiation at different temperatures are reported and compared. We irradiated the devices with 200 keV protons to a fluence of 1016 cm-2. Examination of the X-ray diffraction (XRD) rocking curves indicates a strongly preferred (100) orientation for the grains of the as-deposited film, with decreases in crystal quality for all irradiated samples. In addition, peak shifts in XRD and Raman spectra of the control sample relative to well- known theoretical positions are indicative of tensile strain in the as-deposited ZnO films. We observed shifts of these peaks towards theoretical unstrained positions in the irradiated films relative to the as-deposited film indicate partial relaxation of this strain. Raman spectra also indicate increases of oxygen vacancies (𝑉𝑂) and zinc interstitials (𝑍𝑛𝑖) relative to the control sample. Additionally, photocurrent versus time measurements showed up to 2x increases in time constants for samples irradiated at lower temperatures months after irradiation, indicating that the defects introduced by suppression of thermally-activated dynamic annealing process has a long-term deleterious effect on device performance. Electronics intended for use in space environments are subjected to high levels of radiation from a variety of sources over their operational lifetimes, including protons and electrons trapped inside planetary magnetic fields, ultraviolet (UV) radiation, and x-rays emitted from the sun during solar flares and coronal mass ejections, as well as a wide range of light and heavy ions from galactic cosmic rays (GCRs).1 High-energy radiation can damage exposed devices on a material level, introducing crystalline defects by displacing atoms from lattice sites, thereby degrading device microstructure and electrical characteristics. Devices made using wide-bandgap semiconductor materials such as zinc oxide (ZnO), gallium nitride (GaN), and silicon carbide (SiC), which have large atomic displacement energies (ZnO: 57 eV, GaN: 19.5 eV, 4H-SiC: 21.3 eV) are much more resistant to radiation-induced degradation than those made with conventional semiconductors like silicon (12.9 eV) or gallium arsenide (9.5 eV).2,3,4 In particular, ZnO-based devices have demonstrated extreme resilience against a variety of types of radiation, including proton,5,6 electron,7 gamma.8,9 This resistance to radiation damage comes not only from large displacement energies, but also from high rates of dynamic annealing (self-healing of irradiation damage while the irradiation is still occurring), which are enhanced by the high mobility of radiation-induced point defects and the more ionic nature of its interatomic bonds, and grant ZnO self-healing capabilities significantly beyond even other wide-bandgap materials like GaN.10,11 As dynamic annealing depends on thermally-activated diffusion processes, device temperature 1 during irradiation has a significant impact on self-healing ability.7,10 Light-induced conductivity enhancement that persists long after light exposure has ended, also known as persistent photoconductivity (PPC), has long been known to be a problem in ZnO-based ultraviolet photodetectors.12 Historically, PPC in ZnO has largely been attributed to a metastable conductive 2+) induced by photoexcitation oxygen vacancy state (𝑉𝑂 → 𝑉𝑂 of trapped electrons at the surface of the material.13 Recent investigations have suggested that, in addition to surface oxygen vacancies, PPC can also be partly attributed to charged 2+) and interstitial defects, as well as stable zinc vacancies (𝑉𝑍𝑛 and metastable defect complexes involving zinc vacancies and hydrogen impurities within the material bulk.14 In this letter, we report on the electrical and structural characterization of thin- film ZnO MSM UV photodetectors subjected to a high fluence of 200 keV temperature-dependent proton irradiation. To fabricate the ZnO MSM UV photodetector, we began with deposition of 1 µm of amorphous SiO2 on a 525 μm (100) p-type 4-inch silicon wafer substrate using plasma- enhanced chemical vapor deposition (PECVD) system (PlasmaTherm Shuttlelock SLR 730) to electrically isolate the ZnO film from the effects of the Si substrate. Next, ~40 nm of ZnO was deposited via atomic layer deposition (ALD) at 150°C (Cambridge NanoTech Savannah S200). Thicknesses of both films were verified with ellipsometry. Next, contacts were formed using a standard lift-off procedure with 40 nm of evaporated Au. The exposed ZnO surface area is 0.151 mm2 and the contact area is 0.386 mm2, with interdigitated electrodes that are 500 µm long, 10 µm wide, and have an interelectrode spacing of 10 µm. Finally, a rectangular trench was etched around each device for electrical isolation. Figure 1 shows scanning-electron microscopy (SEM) images and cross- sectional schematics of the fabricated devices. Devices were irradiated with 200 keV protons up to a fluence of 1016 protons/cm2 on an ion implanter (Danfysik, Inc.) at the Ion Beam Materials Laboratory (IBML) in Los Alamos National Laboratory (LANL). Ion implantation profiles were generated using Stopping Range of Ion in Matter (SRIM). The substrate was angled 7° off from the proton beam to prevent channeling effects. During irradiation, devices were held either at low temperature (-25°C), room temperature (25°C), or high temperature (70°C) by heating or cooling the target stage (See Supplemental Information). To better simulate the effects of space-borne radiation on active devices, the detectors were biased with 1 V several times per minute during irradiation, as the presence of an electric field during irradiation is known to have a significant effect on the resulting damage profile.1 Devices were annealed at room temperature for 6 months before electrical and microstructural characterization. FIG. 2. Measured XRD rocking curve spectra and full-width half- maximums of the ZnO (100) peak for irradiation temperatures. TABLE I. XRD Rocking Curve FWHMs for all irradiation temperatures Irradiation Temp. FWHM (°) -25°C 25°C 70°C Control 0.0067 0.0059 0.0040 0.0040 XRD (Philips X'Pert, copper Kα X-Ray source) rocking curves were used to investigate the crystal structure of the ZnO before irradiation and after irradiation at all temperatures. Figure 2 and Table 1 show the rocking curves and associated full-width half-maximums (FWHMs) for sample at various irradiation temperatures. XRD analysis of the films indicates a (100) preferred orientation, in line with previous reports of low-temperature ALD ZnO on glass.15,16,17,18,19 This is in contrast to typical ZnO film growth, in which the (002) orientation is preferred. Surface migration is believed to be an important factor in c-axis-oriented growth, and so is inhibited during lower-temperature growths.20 The control sample (100) peak is shifted ~0.5° to the right of its theoretical position indicating tensile strain in the as-deposited film. All irradiated devices show shifts of the ZnO (100) peak to the left relative to the control, which is indicative of strain relaxation with devices irradiated at lower temperatures exhibiting slightly larger shifts. FIG. 1. (a) Top-view SEM of the ZnO MSM UV photodetector and cross-sectional schematics showing (b) proton irradiation and UV illumination of the device 2 FIG. 3. Measured Raman spectra for irradiation temperatures. Raman Spectroscopy (HORIBA Scientific LabRAM HR Evolution spectrometer, 532 nm laser) was also used to investigate the changes induced by proton irradiation. Figure 3 shows the Raman spectra for samples irradiated at all three temperatures, as well as the control sample. The peaks at 302 cm-1, 528 cm-1, 620 cm-1, and 670 cm-1 correspond to the silicon substrate,21 and the peaks at 433 cm-1 and ~573 cm-1 are attributed to the ZnO E2 (high) and A1 longitudinal optical (LO) modes, respectively.21,22 The E2 (high) peak is shifted to the left for all samples relative to its theoretical position at 437 cm-1, which is indicative of tensile strain in the as-deposited ZnO film.21 For the irradiated samples, the E2 peak is shifted towards its bulk position (~435 cm-1 for the -25°C sample, ~434 cm-1 for the 25°C and 70°C samples), which indicates a radiation- induced partial relaxation of as-deposited tensile strain, which is in good agreement with the results from XRD.21,23 The 573 cm-1 peak, which is associated with the presence of (𝑉𝑂) and (𝑍𝑛𝑖) is not distinct, likely for three reasons: because it is partially buried by the strong peak from the silicon substrate at 528 cm-1, because the ZnO film is only 40 nm thick, and because the appearance of this peak in Raman spectra is suppressed by the presence of hydrogen, and, as indicated by the SRIM simulation, significant amounts of hydrogen were introduced by the proton irradiation.21,24 FIG. 4. Measured photocurrent transients and fits for (a) control, (b) low temperature, (c) room temperature, and (d) high temperature samples. Table II. Photocurrent Rise Time Constants Irradiation Temp. τ1 (s) τ2 (s) -25°C 25°C 70°C Control 3391 2855 2596 2034 270.9 245.5 230.9 234.2 Table III. Photocurrent Decay Time Constants Irradiation Temp. τ1 (s) τ2 (s) -25°C 25°C 70°C Control 4154 3852 2112 1509 350 321.2 102.8 211.9 In addition to structural characterization, photocurrent vs. time measurements were taken to study the effects of radiation on device performance. Each device was biased at 1 V for 30 seconds, then illuminated with a 365 nm UV LED for one hour, after which the light was turned off and the photocurrent decay was observed. It was found that both the photocurrent rise and decay were best modeled by a sum of exponentials, in agreement with results from literature.25,26,27 Equation 1 was used to fit photocurrent rise data and equation 2 was used to fit photocurrent decay data, where i is current, t is time, a, b, and c are fit constants, and τ1 and τ2 are time constants which correlate to activated defect relaxation phenomena. It was found that decreasing the temperature during irradiation substantially increased the value of both time constants during both photocurrent rise and fall, with some values for the -25°C samples being more than twice those of the control samples. Figure 4 displays the data and fits for all four sample conditions, and tables 2 and 3 display the time constants, respectively. 𝑖 = 𝑎 ∗ (1 − 𝑒 (− 𝑡 𝜏1 ) ) + 𝑏 ∗ (1 − 𝑒 (− 𝑡 𝜏2 ) ) + 𝑐 (1) 𝑖 = 𝑎 ∗ (𝑒 (− 𝑡 𝜏1 ) ) + 𝑏 ∗ (𝑒 (− 𝑡 𝜏2 ) ) + 𝑐 (2) 3 electrically, temperatures experiencing structurally, In summary, 50 nm ZnO MSM UV photodetectors were characterized and spectroscopically before and after being subjected to 200 keV proton irradiation up to a fluence of 1016 cm-2 while held at different temperatures. XRD rocking curves and Raman spectra indicate significant increases in defect densities and partial relaxation of as-deposited tensile strain for all irradiated samples relative to the control, with the devices irradiated at lower the most damage. Photocurrent vs time measurements under 365 nm UV illumination showed significant increases in time constants as irradiation temperature was decreased, indicating that the temperature of ZnO devices during irradiation has a profound effect on dynamic annealing capability and therefore defect accumulation, long-term device performance. See Supplemental Information for the proton irradiation test setup and SRIM simulation. significantly affecting This work was performed, in part, at the Center for Integrated Nanotechnologies, an Office of Science User Facility operated for the U.S. Department of Energy (DOE), Office of Science. Los Alamos National Laboratory, an affirmative action equal opportunity employer, is operated by Los Alamos National Security, LLC, for the National Nuclear Security administration of the U.S. Department of Energy under Contract No. DE-AC52-6NA25396. Fabrication and material characterization work were performed in part at the Stanford Nanofabrication Facility (SNF) and Stanford Nano Shared Facilities (SNSF). This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Workforce Development for Teachers and Scientists, Office of Science Graduate Student Research (SCGSR) program. The SCGSR program is administered by the Oak Ridge Institute for Science and Education for the DOE under contract number DE‐ SC0014664. References: 1D. M. Fleetwood, IEEE Transactions on Nuclear Science 65, 1465 (2017). 2H. Y. Xiao, F. Gao, X. T. Zu, and W. J. Weber, Journal of Applied Physics 105, 123527 (2009). 3A. H. Johnston, Reliability and Radiation Effects In Compound Semiconductors, 241 (2010). 4D. R. Locker, and J. M. Meese, IEEE Transactions on Nuclear Science 19, 237 (1972). 5F. D. Auret, S. A. Goodman, M. Hayes, M. J. Legodi, H. A. Van Laarhoven, and D. C. Look, Applied Physics Letters 79, 3074 (2001). 6K. Yapabandara, V. Mirkhani, S. Wang, M. Khanal, S. Uprety, T. Isaacs-Smith, M. Hamilton, and M. Park, APS Meeting Abstracts 2018. 7C. Coskun, D. C. Look, G. C. Farlow, and J. R. Sizelove, Semiconductor Science and Technology 19, 752 (2004). 4 8S. Ranwa, S. S. Barala, M. Fanetti, and M. Kumar, Nanotechnology 27, 345502 (2016). 9R. G. Sonkawade, Proceedings of the twentieth national conference on solid state nuclear track detectors and their applications, (2017). 10K. Lorenz, M. Peres, N. Franco, J. G. Marques, S. M. C. Miranda, S. Magalhães, T. Monteiro, W. Wesch, E. Alves, and E. Wendler, Oxide-Based Materials and Devices Ii, 7940, 79400O (2011). 11W. Wesch, E. Wendler, and C. S. Schnohr, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 277, 58 (2012). 12D. A. Melnick, The Journal of Chemical Physics 26, 1136 (1957). 13J. Moore, and C. Thompson, Sensors 13, 9921 (2013). 14Y. Kang, H. H. Nahm, and S. Han, Scientific reports 6 35148 (2016). 15H. Makino, A. Miyake, T. Yamada, N. Yamamoto, and T. Yamamoto, Thin Solid Films 517, 3138 (2009). 16Y. Kajikawa, Journal of Crystal Growth 289, 387 (2006). 17A. Yamada, B. Sang, and M. Konagai, Applied Surface Science 112, 216 (1997). 18E. B. Yousfi, J. Fouache, and D. Lincot, Applied Surface Science 153, 223 (2000). 19C. R Kim., C. M. Shin, J. Y. Lee, J. H. Heo, T. M. Lee, J. H. Park, H. Ryu, C. S. Son, and J. H. Chang, Current Applied Physics 10, S294 (2010). 20N. Ashkenov, B. N. Mbenkum, C. Bundesmann, V. Riede, M. Lorenz, D. Spemann, E. M. Kaidashev et al, Journal of Applied Physics 93, 126 (2003). 21A. Ismail, and M. J. Abdullah, Journal of King Saud University-Science 25, 209 (2013). 22W. Cao, and W. Du, Journal of Luminescence 124, 260 (2007). 23R. Cuscó, E. Alarcón-Lladó, J. Ibanez, L. Artús, J. Jiménez, B. Wang, and M. J. Callahan, Physical Review B 75, 165202 (2007). 24Windisch Jr, C. F., G. J. Exarhos, C. Yao, and L. Q. Wang, Journal of Applied Physics 101, 123711 (2007). 25K. Liu, M. Sakurai, and M. Aono, Sensors 10, 8604 (2010). 26K. W. Liu, J. G. Ma, J. Y. Zhang, Y. M. Lu, D. Y. Jiang, B. H. Li, D. X. Zhao, Z. Z. Zhang, B. Yao, and D. Z. Shen, Solid- State Electronics 51, 757 (2007). 27J. Reemts, and A. Kittel, Journal of Applied Physics 101, 013709 (2007). 5
1803.07905	3	1803	2019-02-18T20:05:09	Importance of Amplifier Physics in Maximizing the Capacity of Submarine Links	[ "physics.app-ph", "eess.SP", "physics.optics" ]	The throughput of submarine transport cables is approaching fundamental limits imposed by amplifier noise and Kerr nonlinearity. Energy constraints in ultra-long submarine links exacerbate this problem, as the throughput per fiber is further limited by the electrical power available to the undersea optical amplifiers. Recent works have studied how employing more spatial dimensions can mitigate these limitations. In this paper, we address the fundamental question of how to optimally use each spatial dimension. Specifically, we discuss how to optimize the channel power allocation in order to maximize the information-theoretic capacity under an electrical power constraint. Our formulation accounts for amplifier physics, Kerr nonlinearity, and power feed constraints. Whereas recent works assume the optical amplifiers operate in deep saturation, where power-conversion efficiency (PCE) is high, we show that given a power constraint, operating in a less saturated regime, where PCE is lower, supports a wider bandwidth and a larger number of spatial dimensions, thereby maximizing capacity. This design strategy increases the capacity of submarine links by about 70% compared to the theoretical capacity of a recently proposed high-capacity system.	physics.app-ph	physics	Importance of Amplifier Physics in Maximizing the Capacity of Submarine Links Jose Krause Perin1, Joseph M. Kahn1, John D. Downie2, Jason Hurley2, and Kevin Bennett2 1E. L. Ginzton Laboratory, Stanford University, Stanford, CA, 94305 USA 2Corning, Sullivan Park, SP-AR-02-1, Corning, NY, 14870 USA February 20, 2019 Abstract The throughput of submarine transport cables is approaching fundamental limits imposed by am- plifier noise and Kerr nonlinearity. Energy constraints in ultra-long submarine links exacerbate this problem, as the throughput per fiber is further limited by the electrical power available to the un- dersea optical amplifiers. Recent works have studied how employing more spatial dimensions can mitigate these limitations. In this paper, we address the fundamental question of how to optimally use each spatial dimension. Specifically, we discuss how to optimize the channel power allocation in order to maximize the information-theoretic capacity under an electrical power constraint. Our formulation accounts for amplifier physics, Kerr nonlinearity, and power feed constraints. Whereas recent works assume the optical amplifiers operate in deep saturation, where power-conversion effi- ciency (PCE) is high, we show that given a power constraint, operating in a less saturated regime, where PCE is lower, supports a wider bandwidth and a larger number of spatial dimensions, thereby maximizing capacity. This design strategy increases the capacity of submarine links by about 70% compared to the theoretical capacity of a recently proposed high-capacity system. 1 Introduction Submarine transport cables interconnect countries and continents, forming the backbone of the Internet. Over the past three decades, pivotal technologies such as erbium-doped fiber amplifiers (EDFAs), wavelength- division multiplexing (WDM), and coherent detection employing digital compensation of fiber impairments have enabled the throughput per cable to jump from a few gi- gabits per second to tens of terabits per second, fueling the explosive growth of the information age. Scaling the throughput of submarine links is a chal- lenging technical problem that has repeatedly demanded innovative and exceptional solutions. This intense tech- nical effort has exploited a recurring strategy: to force ever-larger amounts of information over a small number of single-mode fibers [1]. This strategy is reaching its limits, however, as the amount of information that can be practi- cally transmitted per fiber approaches fundamental limits imposed by amplifier noise and Kerr nonlinearity [2,3]. In submarine cables longer than about 5,000 km, this strat- egy faces another fundamental limit imposed by energy constraints, as the electrical power available to the under- sea amplifiers ultimately restricts the optical power and throughput per fiber. Insights from Shannon's capacity offers a different strategy. Capacity scales linearly with the number of di- mensions and only logarithmically with the power per di- mension, so a power-limited system should employ more spatial dimensions (fibers or modes), while transmitting less data in each. This principle was understood as early as 1973 (see [4] and references therein) and recently em- braced by the optical communications community [5 -- 7]. In fact, numerous recent works have studied how this new strategy improves the capacity and power efficiency of ultra-long submarine links [8 -- 11]. But a fundamental question remained unanswered: what is the optimal way of utilizing each spatial dimension? Formally, what is the channel power allocation that maximizes the information- theoretic capacity per spatial dimension given a con- straint in the total electrical power? In this paper, we formulate this problem mathematically and demonstrate how to solve it. In contrast to the existing literature [8 -- 11], we model the optical amplifier using amplifier rate equations rather than models assuming a constant power-conversion effi- ciency (PCE). We argue that modeling amplifier physics is critical for translating energy constraints into param- eters that govern the system capacity, such as amplifica- tion bandwidth, noise, and optical power. This is partic- ularly critical when the number of spatial dimensions is large, and the amplifier must operate with reduced pump power. Under these unusual operational conditions, sim- ple constant-PCE models may not be accurate. 1 Our formulation results in a non-convex optimization problem, but its solutions are robust, i.e., they do not seem to depend on initial conditions. This suggests that the optimization reaches the global minimum or is con- sistently trapped in an inescapable local minimum. In either case, the solutions are very promising. The opti- mized power allocation increases the theoretical capacity per fiber by 70% compared to recently published results that employ spatial-division multiplexing (SDM) and flat power allocation. Our optimization yields insights into power-limited submarine link design and operation. In agreement with prior work [11], we find that overall cable capacity is max- imized by employing tens of spatial dimensions per di- rection. Prior work, however, modeled EDFAs using a constant PCE value consistent with operation in a highly saturated regime, which maximizes PCE. Our work shows that operation in a less saturated regime, where PCE is lower, increases the useful amplification bandwidth, i.e., the number of wavelength channels for which the gain ex- ceeds the span attenuation, and makes more power avail- able for additional spatial dimensions. Thus, our opti- mization increases capacity by better utilization of both wavelength and spatial domains. Moreover, our optimiza- tion, by including Kerr nonlinearity and not neglecting it a priori, clarifies the conditions under which nonlinearity is important, and is applicable to systems in which the number of spatial dimensions is constrained. The remainder of this paper is organized as follows. In Section II we formulate the optimization problem and describe how to solve it. In Section III we present sim- ulation results comparing the optimized channel power profile with conventional flat allocation designs. We con- clude the paper in Section IV. We provide an Appendix on modeling EDFA physics and Kerr nonlinearity, and on the optimization algorithm. 2 Problem formulation A submarine transport cable employs S spatial dimen- sions in each direction, which could be modes in a multi- mode fiber, cores of a multi-core fiber, or simply multiple single-mode fibers. Throughout this paper, we assume that each spatial dimension is a single-mode fiber, since this is the prevailing scenario in today's submarine sys- tems. Each of those fibers can be represented by the equivalent diagram shown in Fig. 1. The link has a total length L, and it is divided into M spans, each of length l = L/M . An optical amplifier with gain G(λ) compensates for the fiber attenuation A(λ) = eαSMF(λ)l of each span, and a gain-flattening filter (GFF) with transfer function 0 < F (λ) < 1 ensures that the amplifier gain matches the span attenuation, so that at each span we have G(λ)F (λ)A−1(λ) ≈ 1. In practice, this condition has to be satisfied almost perfectly, as a mismatch of just a tenth of a dB would accumulate to Figure 1: Equivalent block diagram of each spatial di- mension of a submarine optical link including amplifier noise and nonlinear noise. tens of dBs after a chain of hundreds of amplifiers. As a result, in addition to GFF per span, periodic power rebalancing after every five or six spans corrects for any residual mismatches. The input signal consists of N potential WDM channels spaced in frequency by ∆f , so that the channel at wave- length λn has power Pn. Our goal is to find the power allocation P1, . . . , PN that maximizes the information- theoretic capacity per spatial dimension. We do not make any prior assumptions about the amplifier bandwidth, hence the optimization may result in some channels not being used i.e., Pn = 0 for some n. Due to GFFs and periodic power rebalancing, the out- put signal power of each channel remains approximately constant along the link. But the signal at each WDM channel is corrupted by amplifier noise PASE,n and non- linear noise NLn. Thus, the SNRn of the nth channel is given by Pn SNRn = PASE,n + NLn 0, , G(λn) > A(λn) . (1) otherwise  Note that only channels for which the amplifier gain is greater than the span attenuation can be used to transmit information, i.e., Pn (cid:54)= 0 only if G(λn) > A(λn). The optical amplifiers for submarine links generally consist of single-stage EDFAs with redundant forward- propagating pump lasers operating near 980 nm. In ultra- long links, the pump power is limited by feed voltage con- straints at the shores. From the maximum power transfer theorem, the total electrical power available to all under- sea amplifiers is at most P = V2/(4Lρ), where V is the feed voltage, and ρ is the cable resistance. To translate this constraint on the total electrical power into a con- straint on the optical pump power Pp per amplifier, we use an affine model similar to the one used in [8, 10]: (cid:16) P (cid:17) Pp = η 2SM − Po , (2) where η is an efficiency constant that translates electri- cal power into optical pump power, and Po is a power overhead term that accounts for electrical power spent in operations not directly related to optical amplification such as pump laser lasing threshold, monitoring, and con- trol. The factor of 2S appears because there are S spatial dimensions in each direction. 2 GFFG(λ)e−αSMF(λ)lF(λ)×M=LlPn≈Pn+PASE,n+NLnThis constraint on the pump power limits the EDFA output optical power and bandwidth, thus imposing a hard constraint on the fiber throughput. As an exam- ple, increasing Pn may improve the SNR and spectral efficiency of some WDM channels, but increasing Pn also depletes the EDF and reduces the amplifier overall gain. As a result, the gain of some channels may drop below the span attenuation, thus reducing the amplifier bandwidth and the number of WDM channels that can be transmit- ted. Further increasing Pn may reduce the SNR, as the nonlinear noise power becomes significant. These consid- erations illustrate how forcing more power per fiber is an ineffective strategy in improving the capacity per fiber of power-limited submarine cables. To compute the amplifier noise PASE,n in a bandwidth ∆f after a chain of M amplifiers, we use the analytical noise model discussed in Appendix A: PASE,n = M NFnhνn∆f, (3) where h is Planck's constant, νn is the channel frequency, and NFn is the amplifier noise figure at wavelength λn. For amplifiers pumped at 980 nm, the noise figure is ap- proximately gain-and-wavelength independent, and it can be computed from theory or measured experimentally. Although we focus on end-pumped single-mode EDFAs, similar models exist for multicore EDFAs [12]. Note that the accumulated ASE power in (3) does not depend on the amplifier gain, as in Fig. 1 we defined Pn as the in- put power to the amplifier, as opposed to the launched power. This convention conveniently makes the accumu- lated ASE independent of power gain. To compute the amplifier gain, we use the semi- analytical model given in Appendix A. In this calculation, we assume that the input power to the amplifier is equal to Pn + (M − 1)NFnhνn∆f . That is, the signal power plus the accumulated ASE noise power at the input of the last amplifier in the chain. As a result, all ampli- fiers are designed to operate under the same conditions as the last amplifier. This pessimistic assumption is not critical in systems that operate with high optical signal- to-noise ratio (OSNR), and accounts for signal droop in low-OSNR systems, where the accumulated ASE power may be larger than the signal power, and thus reduce the amplifier useful bandwidth. To account for Kerr nonlinearity, we use the Gaussian noise (GN) model, which establishes that the Kerr nonlin- earity in dispersion-uncompensated fiber systems is well modeled as an additive zero-mean Gaussian noise whose power at the nth channel is given by [13] N(cid:88) N(cid:88) 1(cid:88) NLn =A−1(λn) n1=1 n2=1 q=−1 Pn1 Pn2 Pn1+n2−n+qD(M spans) q (n1, n2, n), (4) for 1 ≤ n1+n2−n+q ≤ N . Here, Pn denotes the launched power of the nth channel, which is related to the input 3 q power to the amplifier by Pn = A(λn)Pn. The nonlinear noise power is scaled by the span attenuation A−1(λn) due to the convention in Fig. 1 that Pn refers to the input power to the amplifier, rather than the launched power. D(M spans) (n1, n2, n) is the set of fiber-specific nonlinear coefficients that determine the strength of the four-wave mixing component that falls on channel n, generated by channels n1, n2, and n1 +n2−n+q. Here, q = 0 describes the dominant nonlinear terms, while the coefficients q = ±1 describe corner contributions. These coefficients were computed in [13] and are detailed in Appendix B. As discussed in Section 3, for systems that operate with pump power below about 100 mW, Kerr nonlinearity is negligible and may be disregarded from the modeling. We do not include stimulated Raman scattering (SRS) in our modeling for two reasons. First, long-haul sub- marine cables employ large-effective-area fibers, which reduces SRS intensity. Second, the optimized amplifier bandwidth is not larger than 45 nm, while the Raman efficiency peaks when the wavelength difference is ∼ 100 nm. Using equations (1) -- (4), we can compute Shannon's ca- pacity per fiber by adding the capacities of the individual WDM channels: N(cid:88) n=1 C = 2∆f 1{G(λn) ≥ A(λn)} log2(1 + ΓSNRn), (5) where 0 < Γ < 1 is the coding gap to capacity and G(λn),A(λn) denote, respectively, the amplifier gain and span attenuation in dB units. The indicator function 1{·} is one when the condition in its argument is true, and zero otherwise. As we do not know a priori which channels contribute to capacity (Pn (cid:54)= 0), we sum over all chan- nels and let the indicator function indicate which channels have gain above the span attenuation. Since the indicator function is non-differentiable, it is convenient to approximate it by a differentiable sigmoid function such as 1{x ≥ 0} ≈ 0.5(tanh(Dx) + 1), (6) where D > 0 controls the sharpness of the sigmoid ap- proximation. Although making D large better approxi- mates the indicator function, it results in vanishing gra- dients, which retards the optimization process. Hence, the optimization problem of maximizing the ca- pacity per fiber given an energy constraint that limits the amplifier pump power Pp can be stated as maximize LEDF,P1,...,PN C given Pp (7) In addition to the power allocation P1, . . . ,PN in dBm units, we optimize over the EDF length LEDF, resulting in a (N + 1)-dimensional non-convex optimization prob- lem. LEDF may be removed from the optimization if its Table 1: Simulation parameters. 3 Results and Discussion Parameter Link length (L) Span length (l) Number of amplifiers per fiber (M ) First channel (λ1) Last channel (λN ) Channel spacing (∆f ) Max. number of WDM channels (N ) Fiber attenuation coefficient (αSMF(λ)) Fiber dispersion coefficient (D(λ)) Fiber nonlinear coefficient (γ) Fiber additional loss (margin) Overall span attenuation (A(λ)) Nonlinear noise power scaling () Coding gap (Γ) Sigmoid sharpness (D) Excess noise factor (nsp) Excess loss (lk) Value 14,350 50 287 1522 1582 50 150 0.165 20 0.8 1.5 8.25 + 1.5 = 9.75 0.07 −1 2 1.4 0 Units km km nm nm GHz dB km−1 ps nm−1 km−1 W−1 km−1 dB dB dB dB/m value is predefined. It is convenient to optimize over the signal power in dBm units, as the logarithmic scale en- hances the range of signal power that can be covered by taking small adaptation steps. Even if we assumed bi- nary power allocation, i.e., Pn ∈ {0, ¯P}, it is not easy to determine the value of ¯P that will maximize the ampli- fication bandwidth for which the gain is larger than the span attenuation. Note that if we did not have the pump power constraint and the amplifier gain did not change with the power allo- cation P1, . . . ,PN , the optimization problem in (7) would reduce to the convex problem solved in [13]. Therefore, we can argue that to within a small ∆Pn that does not change the conditions in the argument of the indicator function, the objective (5) is locally concave. Nevertheless the optimization problem in (7) is not convex, and therefore we must employ global optimiza- tion techniques. In this paper, we use the particle swarm optimization (PSO) algorithm [14]. The PSO randomly initializes R particles X = [LEDF,P1, . . . ,PN ]T . As the optimization progresses, the direction and velocity of each particle is influenced by its best known position and also by the best known position found by other particles in the swarm. The PSO algorithm was shown to outper- form other global optimization algorithms such as the ge- netic algorithm in a broad class of problems [15]. Further details of the PSO are given in Appendix C. When nonlinear noise is negligible, the solutions found through PSO are robust. That is, they do not depend on the initial conditions. When nonlinear noise is significant, different particle initializations lead to the same overall solution, but these solutions differ by small random varia- tions. To overcome this problem, once the PSO algorithm stops, we continue the optimization using the saddle-free Newton's (SFN) method [16]. This variant of Newton's method is suited to non-convex problems, as it is not at- tracted to saddle points. It requires knowledge of the Hessian matrix, which can be computed analytically or through finite differences of the gradient. Further details of the SFN method are given in Appendix C. 4 We now apply our proposed optimization procedure to the reference system with parameters listed in Table 1. These parameters are consistent with recently published experimental demonstration of high-capacity systems em- ploying SDM [9]. We consider M = 287 spans of l = 50 km of low-loss large-effective area single-mode fiber, re- sulting in a total link length of L = 14, 350 km. The span attenuation is A(λ) = 9.75 dB, where 8.25 dB is due to fiber loss, and the additional 1.5 dB is added as margin. For the capacity calculations we assume a coding gap of Γ = 0.79 (−1 dB). 3.1 Optimized channel power We first study how the optimized power allocation and the resulting spectral efficiency is affected by the ampli- fier pump power. We also investigate how Kerr nonlin- earity affects the optimized power allocation and when it can be neglected. This discussion does not assume any particular electrical power budget or number of spatial dimensions. In Section 3.5, we consider how employing multiple spatial dimensions can lead to higher overall ca- ble capacity. For a given pump power Pp, we solve the optimiza- tion problem in (7) for the system parameters listed in Table 1. The resulting power allocation Pn is plotted in Fig. 2 when Kerr nonlinearity is (a) disregarded and (b) included. The corresponding achievable spectral effi- ciency of each WDM channel is shown in Fig. 2cd. For small pump powers, the optimized power profile is limited by amplifier properties, and thus there is only a very small difference between the two scenarios shown in Fig. 2. As the pump power increases and the amplifier delivers more output power, Kerr nonlinearity becomes a factor limiting the channel power. Interestingly, the op- timized power allocation in the nonlinear regime exhibits large variations at the extremities because the nonlinear noise is smaller at those channels. Although the opti- mization is performed for 150 possible WDM channels from 1522 nm to 1582 nm, Fig. 2a and (b) show that not all of these WDM channels can be utilized. The useful bandwidth is restricted between roughly 1528 nm and 1565 nm. Note that, as expected, the useful band- width does not increase significantly even when the pump power Pp is tripled from 60 mW to 180 mW, since the amplification bandwidth is fundamentally limited by the EDF's gain and absorption coefficients. However, for very small pump powers the useful amplification bandwidth decreases, as the gain for some channels becomes insuf- ficient to compensate for the span attenuation. For in- stance, note that for Pp = 30 mW, part of the amplifier bandwidth cannot be used, as the resulting amplifier gain is below attenuation. The optimized EDF length does not vary significantly, and it is generally in the range of 6 to 8 m. Figure 2: Optimized power allocation Pn for several values of pump power Pp. Kerr nonlinearity is disregarded in (a) and included in (b). Their corresponding achievable spectral efficiency is shown in (c) and (d). Note that Pn corresponds to the input power to the amplifier. The launched power is Pn = G(λn)F (λn)Pn = A(λn)Pn. Thus, the launch power is 9.75 dB above the values shown in these graphs. The solid lines in Fig. 2c and (d) are obtained from (5) by using exact models (8) for the amplifier gain and noise, while the dashed lines are computed by making approximations to allow (semi-)analytical calculation of amplifier gain (10) and noise (3) (see Appendix A), and speed up the optimization process. Although the approx- imations lead to fairly small errors in estimating the spec- tral efficiency, we emphasize that after the optimizations conclude, the exact models are used to definitively quan- tify the spectral efficiency and overall system capacity obtained. 3.2 Signal and ASE evolution slightly. Note that the ideal GFF profiles have ripples of less than 3 dB. The variations in amplifier gain along the 287 spans are also small, resulting in GFF shape difference of less than 2 dB between the first and last GFFs. In practice, the ideal GFF shape can be achieved by fixed GFF after each amplifier and periodic power rebalancing at intervals of five or so spans. As a test of how critically important ideal per-span gain flattening is, we considered a scenario in which all GFFs are identical to the last GFF (labeled 287 in Fig. 3b), and ideal power rebalancing is realized only after every 10 spans. The difference in ca- pacity in this scenario is less than 3% with respect to the ideal case. For the optimized power profile for Pp = 60 mW shown in Fig. 2b, we compute the evolution of amplifier gain, accu- mulated ASE, and the required GFF gain along the 287 spans, as shown in Fig. 3. The amplifier gain and ASE power are computed using the exact amplifier model given in (8). The accumulated ASE power (Fig. 3c) increases after every span, causing the amplifier gain (Fig. 3a) and consequently the ideal GFF gain (Fig. 3b) to change At the last span of the signal and ASE evolution sim- ulation, we compute the spectral efficiency per channel and compare it to the approximated results obtained us- ing (1) -- (5). As in the discussion of Fig. 2(c) and (d), although the approximations lead to fairly small errors in estimating the spectral efficiency, we use the exact cal- culations to definitively quantify spectral efficiency and overall capacity. 5 1,5201,5301,5401,5501,5601,570−20−18−16−14−12−10Wavelength(nm)PowerallocationPn(dBm)1,5201,5301,5401,5501,5601,570−20−18−16−14−12−10Wavelength(nm)PowerallocationPn(dBm)Pumppower(Pp)180mW120mW60mW30mW1,5201,5301,5401,5501,5601,5702468Wavelength(nm)Spectralefficiency(bit/s/Hz)1,5201,5301,5401,5501,5601,5702468Wavelength(nm)Spectralefficiency(bit/s/Hz)ExactApproximatedIgnoringKerrnonlinearityIncludingKerrnonlinearity(a)(b)(c)(d)Figure 3: Theoretical (a) amplifier gain, (b) ideal GFF gain, and (c) accumulated ASE power in 50 GHz after 1, 100, 200, and 287 spans of 50 km. The pump power of each amplifier is 60 mW, resulting in the optimized power profile shown in Fig. 2b for Pp = 60 mW and EDF length of 6.27 m. 3.3 Capacity per spatial dimension Fig. 4a shows the total capacity per fiber as a function of the pump power. Once again, for each value of pump power Pp, we solve the optimization problem in (7) for the system parameters listed in Table 1. The capacity per spatial dimension plotted in Fig. 4a is computed by summing the capacities of the individual WDM channels. Below about 100 mW of pump power, the system operates in the linear regime. At higher pump powers, the ampli- fier can deliver higher optical power, but Kerr nonlinear- ity becomes significant and limits the capacity. Fig. 4b details the ratio between ASE power and nonlinear noise power. At high pump powers, ASE is only about 4 dB higher than nonlinear noise. This illustrates the dimin- ishing returns of forcing more power over a single spatial dimension. optical pump power Fig. 4c shows the total launched optical power and amplifier power conversion efficiency (PCE) defined as PCE ≡ total output optical power−total input optical power [17]. From energy conservation arguments, it can be shown that PCE is upper bounded by the ratio between pump and signal wavelengths, which for 980 nm pump results in PCE < 63% [17]. Fig. 4c also shows the diminishing returns of forcing more power over a single spatial di- mension, since the amplifier efficiency does not increase linearly with pump power. In fact, doubling the pump power from 50 mW to 100 mW increases PCE by only 7.43%. Clearly, this additional pump power could be better employed in doubling the number of spatial di- mensions, which would nearly double the overall cable capacity. We have also computed the capacity for different span lengths assuming a total pump power per fiber of Pp,total = 287 × 50 = 14350 mW. In agreement to prior work [18], the optimal span length is achieved for 40 -- 50 km, resulting in an optimal span attenuation of 8.1 -- 9.75 dB. 3.4 Comparison to experimental system To gauge the benefits of our proposed optimization pro- cedure, we compare the results of our approach to those of a recently published work [9], which experimentally demonstrated high-capacity SDM systems. In their ex- perimental setup, Sinkin et al used 82 channels spaced by 33 GHz from 1539 nm to 1561 nm. Each of the 12 cores of the multicore fiber was amplified individually by an end-pumped EDFA with forward-propagating pump. Each amplifier was pumped near 980 nm with 60 mW re- sulting in an output power of 12 dBm [9], thus −7.1 dBm per channel. The span attenuation was 9.7 dB, leading 6 1,5201,5301,5401,5501,5601,5709101112131100200287spanattenuationWavelength(nm)Amplifiergain(dB)1,5201,5301,5401,5501,5601,570−3−2−101100200287Wavelength(nm)IdealGFFgain(dB)1,5201,5301,5401,5501,5601,570−50−40−30−201100200287Wavelength(nm)Acc.ASEpower(dBm)1,5201,5301,5401,5501,5601,5703456Wavelength(nm)Spectralefficiency(bit/s/Hz)Approx.usingEqs.1 -- 5Signal&ASEevolutionsimulation(a)(b)(c)(d)Figure 4: (a) Total capacity per single-mode fiber as a function of pump power. The power allocation and EDF length are optimized for each point. The red dot corresponds to the capacity according to (5) for a system with parameters consistent with [9]. (b) Corresponding ratio between ASE and nonlinear noise power, and (c) corresponding power conversion efficiency and total launched optical power. to the input power to the first amplifier of Pn = −16.7 dBm per channel. We compute the capacity of this sys- tem according to (5) using the same methods and models for amplifier and Kerr nonlinearity discussed in Section 2. Fiber parameters and amplifier noise figure are given in Table 1. The EDF length is assumed 7 m, which is the value resulting from our optimization for EDFAs pumped with 60 mW. The resulting achievable spectral efficiency per channel is, on average, 4.8 bit/s/Hz, yielding a maxi- mum rate of about 13 Tb/s per core. This is indicated by the red dot in Fig. 4. Naturally, this calculation is over- simplified, but it is consistent with the rate achieved in [9]. Their experimental spectral efficiency is 3.2 bit/s/Hz in 32.6 Gbaud, leading to 106.8 Gb/s per channel, 8.2 Tb s−1 per core, and 105 Tb s−1 over the 12 cores. The ca- pacity using the optimized power profile is about 22 Tb s−1 per core for the same pump power and overall system (ASE + Kerr nonlinearity curve in Fig. 4), thus offering 70% higher capacity when compared to the theoretical estimate for a system consistent with [9]. The optimized power profile for Pp = 60 mW is plotted in Fig. 2b. The main benefit of the channel power optimization is to allow the system to operate over a wider amplifica- tion bandwidth with more spatial dimensions. Capacity scales linearly with the number of dimensions (frequency or spatial) and only logarithmically with power. The opti- mization tends to favor lower signal powers, inducing less gain saturation and allowing higher gain for a given pump power. This increases the usable bandwidth, over which the gain exceeds the span attenuation, and frees pump power for additional spatial dimensions. The optimiza- tion does not necessarily optimize the amplifiers for high PCE. Highly saturated optical amplifiers achieve higher PCE, but that does not necessarily translate to higher power-limited information capacity. 3.5 Optimal number of spatial dimen- sions The optimal strategy is therefore to employ more spa- tial dimensions while transmitting less power in each one. The optimal number of spatial dimensions depends on the available electrical power budget. As an example, Fig. 5 shows the capacity of a cable employing S spatial dimensions in each direction. We consider the feed volt- age V = 12 kV, cable resistivity ρ = 1 Ω km−1, and the reference link of Table 1. Thus, the total electrical power available for all amplifiers is 2.5 kW. From this and as- suming efficiency η = 0.4 and overhead power Po, we can compute the pump power per amplifier Pp according to (2), and obtain the capacity per fiber from Fig. 4a. The optimal number of spatial dimensions in each direction S decreases as the overhead power increases, reaching 20, 12, and 8 for the power overhead Po = 0.1, 0.2, and 0.3 W, respectively. This corresponds to amplifiers with pump powers of 43.7, 47.4, and 65.7 mW, respectively. Hence, at the optimal number of spatial dimensions the system operates in the linear regime, as can be seen by inspecting Fig. 4. For small values of Po → 0, the optimal number of spatial dimensions is very large, illustrating the benefits of massive SDM, as reported in [11]. Fig. 5 also illustrates the diminishing returns of oper- ating at a very large number of spatial dimensions. Con- sider, for instance, the curve for power overhead Po = 0.1 W. The optimal number of spatial dimensions is S = 20, 7 501001502002503001020304050[9]×1.7Pumppower(mW)Capacityperspatialdimension(Tb/s)ASEonlyASE+Kerrnonlinearity501001502002503000246810Pumppower(mW)ASE/NLnoise(dB)5010015020025030030405060Pumppower(mW)PCE(%)101214161820Totallaunchedpower(dBm)(a)(b)(c)module fails. The failure occurs at the span indexed by zero. The amplifier operates with redundant pumps re- sulting in Pp = 50 mW, and in the event of a single-pump failure the power drops to Pp = 25 mW. The signal power in the channels at the extremities of the spectrum are re- stored with just two spans. Capacity is not significantly affected by a single-pump failure, since the amplifier noise increases by less than 0.5 dB in all channels. Although the power levels could still be restored in the event that the two pump lasers in the module fail, the total ampli- fier noise power would be about 10 dB higher in some channels. 4 Conclusion We have demonstrated how to maximize the information- theoretic capacity of ultra-long submarine systems by op- timizing the channel power allocation in each spatial di- mension. Our models account for EDFA physics, Kerr nonlinearity, and power feed limitations. Modeling EDFA physics is paramount to understanding the effects of en- ergy limitations on amplification bandwidth, noise, and optical power, which intimately govern the system ca- pacity. We show that this optimization results in 70% higher capacity when compared to the theoretical capac- ity of a recently proposed high-capacity system. Our op- timization also provides insights on the optimal number of spatial dimensions, optimal amplifier operation, and the impact of Kerr nonlinearity. Our proposed technique could be used in optimizing existing systems, and also to design future systems leveraging SDM. A Amplifier physics The steady-state pump and signal power evolution along an EDF of length LEDF is well modeled by the standard confined-doping (SCD) model [19], which for a two-level system is described by a set of coupled first-order nonlin- ear differential equations: d dz Pk(z) = uk(αk + g∗k) ¯n2 ¯nt Pk(z) − uk(αk + lk)Pk(z) + 2ukg∗k ¯n2 ¯nt hνk∆f (8) (cid:80) 1 +(cid:80) ¯n2 ¯nt = Pk(z)αk Pk(z)(αk+g∗ k) hνkζ hνkζ (9) k k where the subindex k indexes both signal and pump i.e., k ∈ {p, 1, . . . , N}, z is the position along the EDF, lk is the excess loss, and uk = 1 for beams that move in the forward direction i.e., increasing z, and uk = −1 oth- erwise. αk is the absorption coefficient, g∗k is the gain coefficient, and ¯n2/¯nt denotes the population of the sec- ond metastable level normalized by the Er ion density ¯nt. 8 Figure 5: Capacity as a function of the number of spatial dimensions for the system of Table 1 assuming a power budget of P = 2.5 kW for all amplifiers. Figure 6: Difference in signal power with respect to cor- rect power allocation in the event of a single pump failure at the span indexed by zero. After about two spans the power levels are restored to their correct values. resulting in a total capacity per cable of about 383 Tb s−1. However, with half of this number of spatial dimen- sions S = 10 (and Pp = 135 mW), we can achieve about 80% of that capacity. Thus, systems subject to practi- cal constraints such as cost and size may operate with a number of spatial dimensions that is not very large. 3.6 Recovery from pump failure An important practical consideration for submarine sys- tems is their ability to recover when the input power drops significantly due to faulty components or pump laser fail- ure. Thus, submarine amplifiers are designed to operate in high gain compression, so that the power level can re- cover from these events after a few spans. We show that the optimized input power profile and amplifier operation can still recover from such events. Fig 6 illustrates the power variation with respect to the optimized power pro- file when one of the two pump lasers in an amplification 510152025300200400600NumberofspatialdimensionsSOverallcablecapacity(Tb/s)Po=0W0.1W0.2W0.3W−3−2−10123456−6−4−2021527.6nm1567.3nmSpanindexPowerdifference(dB)output photon flux Qout is given by the implicit equation: (cid:16) αk + g∗k (cid:88) k Qout = Qin k exp (Qin − Qout) − αkLEDF ζ (cid:17) (11) Therefore, to compute the amplifier gain using the semi-analytical model, we must first solve (11) numer- ically for Qout, and then compute the gain using (10). This procedure is much faster than solving (8). The semi-analytical model is useful to compute the gain, but it does not give us any information about the noise power. Thus, we must use a further simplification. By assuming that the amplifier is inverted uniformly, equation (8) can be solved analytically resulting in the well-known expression for ASE power in a bandwidth ∆f for a single amplifier: PASE,n = 2nsp,n(Gn − 1)hνn∆f (12) Gn−1 Gn where nsp is the excess noise factor [19, equation (32)]. The excess noise factor is related to the noise figure , where the commonly used high-gain N Fn = 2nsp,n approximation G(λn)−1 G(λn) ≈ 1 may be replaced by the more accurate approximation G(λn)−1 G(λn) ≈ 1 − e−αSM F l, since in submarine systems the amplifier gain is approximately equal to the span attenuation, which is on the order of 10 dB. This approximation conveniently makes the amplifier noise figure independent of the amplifier gain. Fig. 8 compares the gain and ASE power predicted us- ing the theoretical model in (8) with experimental mea- surements for several values of pump power Pp. The am- plifier consists of a single 8-m-long EDF pumped by a forward-propagating laser near 980 nm with power Pp. The incoming signal to the amplifier consists of 40 un- modulated signals from 1531 to 1562. The power of each signal is −13 dBm, resulting in a total of 3 dBm. The theoretical results use (8) with experimentally measured values of the absorption and gain coefficients α and g∗. The nominal experimentally measured values have been scaled up by 8% to achieve the best fit between theory and experiment. The experimental error in these values was estimated independently to be about 5%. B Discrete Gaussian noise model Figure 7: Absorption and gain coefficients for the EDF used in this paper. C band is highlighted. For the pump at 980 nm, αp = 0.96 m−1, and g∗p = 0 m−1. Other relevant parameters are NA = 0.28, rEr = 0.73µm, and ¯nt = 9.96 × 1018 cm3. ζ = πr2 Er ¯nt/τ is the saturation parameter, where rEr is the Er-doping radius, and τ ≈ 10 ms is the metastable lifetime. According to this model, the amplifier charac- teristics are fully described by three macroscopic param- eters, namely αk, g∗k, and ζ. Fig 7 shows αk and g∗k for the EDF used in our simulations for this paper. The first term of (8) corresponds to the medium gain, the second term accounts for absorption, and the third term accounts for amplified spontaneous emission (ASE) noise. To compute the amplifier gain and noise using (8), we must solve the boundary value problem (BVP) of N + 1 + 2N coupled equations, where we have N equations for the signals, one for the pump, and the noise at the signals' wavelengths is broken into 2N equations: N for the forward ASE, and N for the backward ASE. Although (8) is very accurate, the optimizations require evaluation of the objective function hundreds of thou- sands of times, which would require solving the BVP in (8) that many times. Hence, approximations for the gain and noise are necessary. By assuming that the amplifier is not saturated by ASE, equation (8) reduces to a single-variable implicit equation [20], which can be easily solved numerically. Ac- cording to this model, the amplifier gain is given by (cid:16) αk + g∗k (cid:17) The nonlinear coefficients D(1span) (n1, n2, n) for one span of single-mode fiber of length l, nonlinear coefficient γ, power attenuation αSMF, and propagation constant β2 are given by the triple integral q Gk = exp (Qin − Qout) − αkLEDF ζ (10) D(1 span) q (n1, n2, n) = 16 27 γ2 and Qin = (cid:80) where Qin k = Pk hνk k Qin is the photon flux in the kth channel, k is the total input photon flux. The ρ((x + n1)∆f, (y + n2)∆f, (z + n)∆f ) · rect(x + y − z + q)∂x∂y∂z, (13) 9 (cid:90)(cid:90)(cid:90) 1/2 −1/2 1,4801,5001,5201,5401,56000.511.52Wavelength(nm)Coefficient(m−1)AbsorptionαkGaing∗kFigure 8: Comparison between experiment and theory for (a) gain and (b) ASE power in 0.1 nm for different values of pump power. Theoretical gain and ASE curves are computed using (8). (cid:12)(cid:12)(cid:12)(cid:12)(cid:12) 1 − exp(−αl + j4π2β2l(f1 − f )(f2 − f )) α − j4π2β2(f1 − f )(f2 − f ) (cid:12)(cid:12)(cid:12)(cid:12)(cid:12)2 , ρ(f1, f2, f ) = (14) where rect(ω) = 1, for ω ≤ 1/2, and rect(ω) = 0 oth- erwise. Equation (13) assumes that all channels have a rectangular spectral shape. q q Computing D(1 span) (n1, n2, n) is computationally less intensive than D(M spans) (n1, n2, n), since the highly os- cillatory term χ(f1, f2, f ) in D(M spans) (n1, n2, n) [13] is constant and equal to one in D(1 span) (n1, n2, n). The nonlinear coefficients for M spans can be computed by following the nonlinear power scaling given in [21]: q q D(M spans) q (n1, n2, n) = M 1+D(1 span) q (n1, n2, n), (15) where the parameter controls the nonlinear noise scaling over multiple spans, and for bandwidth of ∼ 40 nm (e.g., 100 channels spaced by 50 GHz), it is approximately equal to 0.06 [21]. The parameter may also be computed from the approximation [21, eq. (23)]. C Optimization algorithms The particle swarm algorithm (PSO) randomly initializes R particles X = [LEDF,P1, . . . ,PN ]T . As the optimiza- tion progresses, the direction and velocity of the ith par- ticle is influenced by its best known position and also by the best known position found by other particles in the swarm: vi ← wvi + µ1ai(pi,best − Xi) + µ2bi(sbest − Xi) (velocity) Xi ← Xi + vi (location) where w is an inertial constant chosen uniformly at ran- dom in the interval [0.1, 1.1], µ1 = µ2 = 1.49 are the adap- tation constants, ai, bi ∼ U[0, 1] are uniformly distributed random variables, pi,best is the best position visited by the ith particle, and sbest is the best position visited by the swarm. To speed up convergence and avoid local minima, it is critical to initialize the particles X = [LEDF, P1, . . . , PN ] to within close range of the optimal solution. From the nature of the problem, we can limit the particles to a very narrow range. The EDF length is limited from 0 to 20 m. Since the amplifier gain will be relatively close to the span attenuation A(λ) = eαSM F l, we can compute the maximum input power to the amplifier that will allow this gain for a given pump power Pp. This follows from conservation of energy [17, eq. 5.3]: Pn < 1 ¯N λpPp λnA(λ) , (16) where λp is the pump wavelength, λn is the signal wave- length, and ¯N is the expected number of WDM channels that will be transmitted. The minimum power is assumed to be 10 dB below this maximum value. When nonlinear noise power is small, the solution found by the PSO does not change for different particle ini- tializations. However, the solutions found by PSO when 10 1,5301,5351,5401,5451,5501,5551,5600246810121416Wavelength(nm)Gain(dB)Pumppower(Pp)18.1mW31.9mW45.8mW59.6mW87.2mW114.9mW1,5301,5351,5401,5451,5501,5551,560−50−48−46−44−42−40−38TheoryExperimentWavelength(nm)ASEpowerin0.1nm(dBm)(a)(b)nonlinear noise is not negligible exhibit some small and undesired variability. To overcome this problem, after the PSO converges, we continue the optimization using the saddle-free Newton's method [16]. According to this algorithm, the adaptation step X ← X + ∆X is given by (17) ∆X = −µH−1∇C, where µ is the adaptation constant, ∇C is the gradient of the capacity in (5) with respect to X, and H is the Hessian matrix, i.e., the matrix of second derivatives of C with respect to X. The absolute value notation in (17) means that H is obtained by replacing the eigenvalues of H with their absolute values. Both the gradient and the Hessian can be derived ana- lytically by using the semi-analytical model given in equa- tions (10) and (11). However, we compute the gradient analytically and compute the Hessian numerically using finite differences of the gradient. Acknowledgments The authors are grateful for the valuable discussions with Marcio Freitas and Ian Roberts. References [1] J. M. Kahn and D. A. B. Miller, "Communications expands its space," Nature Photonics, vol. 11, no. 1, pp. 5 -- 8, 2017. [2] P. P. Mitra and J. B. Stark, "Nonlinear limits to the information capacity of optical fibre communica- tions," Nature, vol. 411, no. 6841, p. 1027, 2001. [3] R.-J. Essiambre, G. Kramer, P. J. Winzer, G. J. Fos- chini, and B. Goebel, "Capacity limits of optical fiber networks," Journal of Lightwave Technology, vol. 28, no. 4, pp. 662 -- 701, 2010. [4] C. M. Caves and P. D. Drummond, "Quantum limits on bosonic communication rates," Rev. Mod. Phys., vol. 66, pp. 481 -- 537, Apr 1994. [5] P. 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1809.07150	1	1809	2018-08-25T00:38:00	Mid-infrared GeSn Electro-Absorption Optical Modulators on Silicon	[ "physics.app-ph", "physics.optics" ]	Mid-infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio-sensing. One key component enabling this technology is the mid-infrared optical modulator used for encoding optical signals. Here, we present a GeSn electro-absorption modulator that can operate in the mid-infrared range. Importantly, this device is monolithically integrated on a silicon substrate, which provides compatibility with standard complementary metal-oxide-semiconductor technology for scalable manufacturing. By alloying Ge with Sn to engineer the bandgap, we observed a clear Franz-Keldysh effect and achieved optimal modulation in the mid-infrared range of 2067-2208 nm with a maximum absorption ratio of 1.8. The results on the Si-based mid-infrared optical modulator open a new avenue for next-generation mid-infrared silicon photonics.	physics.app-ph	physics	Mid‐infrared GeSn electro‐absorption optical modulators on silicon Jun‐Han Lin,1 Bo‐Jung Huang,1 H. H. Cheng,2 and Guo‐En Chang1,* 1Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High‐ tech Innovations, National Chung Cheng University, Chiayi County 62102, Taiwan 2Center for Condensed Matter Sciences, and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan Abstract Mid‐infrared silicon photonics has recently emerged as a new technology for a wide range of applications such as optical communication, lidar, and bio‐sensing. One key component enabling this technology is the mid‐infrared optical modulator used for encoding optical signals. Here, we present a GeSn electro‐absorption modulator that can operate in the mid‐infrared range. Importantly, this device is monolithically integrated on a silicon substrate, which provides compatibility with standard complementary metal‐oxide‐semiconductor technology for scalable manufacturing. By alloying Ge with Sn to engineer the bandgap, we observed a clear Franz -- Keldysh effect and achieved optimal modulation in the mid‐infrared range of 2067 -- 2208 nm with a maximum absorption ratio of 1.8. The results on the Si‐based mid‐infrared optical modulator open a new avenue for next‐generation mid‐infrared silicon photonics. * correspondence and material requests should be addressed to G.E.C. (email:[email protected]) 1 Introduction The operation wavelength of silicon photonics has been recently extended from the near‐ infrared (NIR) to the mid‐infrared (MIR) spectral region (typically defined as a wavelength range of 1.8 -- 5 µm [1]) for many emerging applications such as ultra high‐speed optical communications, remote sensing, infrared version, and lidar [1 -- 5]. With the unique advantages of complementary metal‐oxide‐semiconductor (CMOS) compatibility, various electronic and photonic devices can be monolithically integrated on the same chip to realize an on‐chip MIR photonic system. However, on‐chip MIR photonic systems rely on both active and passive fundamental devices that can operate in the MIR spectral region, and consequently, extensive efforts have been made to develop MIR photonic devices on Si. Recently, passive MIR devices such as low‐loss waveguides, couplers, and splitters have been demonstrated [6]. In addition, active group‐IV MIR devices lasers [7,8] and photodetectors [9] have been demonstrated recently, bringing MIR silicon photonics closer to widespread applications. including An optical modulator is a crucial component used for encoding optical signals in any photonic system. However, efficient MIR optical modulators based on group‐IV semiconductors pose fundamental and scientific challenges. First, the symmetry of crystalline Si and Ge leads to vanishing linear electro‐optic (Pockels) effects for optical modulators. Free‐carrier plasma dispersion effects have been employed to fabricate high‐speed Si optical modulators [10 -- 12]. However, relatively weak plasma dispersion effects require a long device length (typically several hundred micrometers or longer) to achieve efficient optical modulation, which pose challenges to high‐density integration in Si photonics. Alternatively, introducing resonators with high quality factors can soften the device footprint requirements, but at the price of a significantly narrowed optical bandwidth of only a few nanometers. There is, fortunately, a third option that could potentially be developed into a competitive solution for efficient group‐ IV optical modulators based on electro‐absorption (EA) effect in which the optical absorption coefficient in semiconductors can be modified via applications of electric fields. Although Ge is an indirect bandgap semiconductor, it surprisingly exhibits efficient electro‐absorption effects associated with direct‐gap transitions at strengths comparable to III‐V direct bandgap 2 semiconductors, including the Franz -- Keldysh (FK) effect in bulk Ge and GeSi [13] and the quantum‐confined Stark effect (QCSE) in Ge quantum wells [14]. With efficient, ultrafast EA effects, high‐performance Ge‐based electro‐absorption modulators (EAMs) have been demonstrated [15 -- 17]. Unfortunately, the relatively large direct bandgap in Ge dictates that Ge‐based EAMs can only operate near 1500‐nm wavelength range, not in the MIR range. As a result, efficient MIR optical modulators based on group‐IV materials remain elusive for completing MIR photonic systems on Si. Recently, GeSn alloys have emerged as a new class of group‐IV semiconductors for MIR Si photonics because of the tunability of their band structure, which can be tuned from indirect to direct, their bandgap energy, which can be reduced from that of Ge, and their CMOS compatibility. These advantages have led to the development of GeSn‐based active photonic devices including light emitters [7,8] and photodetectors [18‐22] capable of operating in the MIR region. While there have been some reports studying the electro‐absorption FK effects in GeSn [23,24], to date, GeSn‐based optical modulators have not been experimentally realized. In this study, we demonstrate, to the best of our knowledge, the first GeSn EAM on silicon based on the FK effect. By introducing Sn into the active layer to engineer the direct bandgap energy, the absorption edge is extended to the MIR region. Upon the application of an electric field, we observe a clear FK effect and achieve optimal optical modulation in the MIR range, confirming the feasibility of GeSn alloys for efficient MIR optical modulators on Si. 3 Results Figure 1. Schematic of our designed normal‐incident GeSn optical modulator. The mid‐infrared light beam is incident from the top and transmitted through the GeSn active layer. Bias voltage is applied to the p‐i‐n junction to modulate the MIR light based on the FK effect. Design of GeSn electro‐absorption modulators. Figure 1 shows a schematic diagram of the designed and fabricated normal‐incident GeSn EAM grown using low‐temperature molecular beam epitaxy (MBE). The device consists of a pseudomorphic Ge/GeSn/Ge p‐i‐n junction with a thickness of 140/360/390 nm on a double‐side polished Si(001) substrate via a fully strain‐ relaxed Ge virtual substrate (thickness 120 nm). The GeSn active layer has a Sn composition of 5.2% and a compressive strain of 0.74%, which were confirmed by x‐ray and calibrated secondary ion mass spectrometry measurements. The samples were fabricated into a normal incident EAM using CMOS‐compatible processing technology [21] with a circular mesa (D) of 500 μm, a SiO2 passivation layer with a thickness of 400 nm, and Cr/Au metal pads with a thickness of 20/200 nm. As light is normally incident on the surface of the GeSn EAM, the EA effect takes place when an electric field is applied to the GeSn active layer under the revised bias condition, thereby modifying the absorption coefficient near the direct bandgap. As a result, the intensity of the transmitted light can be modulated. 4 )  T 0   as ( T V T  0 ) / s  ( T V s Figure 2. (a) Modulation level spectra of the GeSn EAM measured at different swing voltages. Clear variation of transmittance is observed, showing the FK effect. The inset shows the schematic band structure of the GeSn active layer. The direct‐gap transition energies are indicated by arrows. (b) Transmittance spectrum of the device under zero‐bias condition. (c) Shifts of the direct‐gap transition energies as a function of the applied electric field. (d) AC optical modulation at selected wavelengths with a swing voltage of 0 to ‐4V at 1 kHz. (e) Calculated EAM bandwidth as a function of device diameter. Optical modulation characteristics. Figure 2(a) shows the measured modulation level, defined ( )sT V are the transmittance measured at zero 0T and sV starting from 0 V, respectively. The spectra clearly show significant oscillation characteristics in the range of 1500 -- 2200 nm, and the variation of the transmittance increases with increasing swing voltage. In addition, the transmittance spectra exhibit redshift as the swing voltage increases because of the electric‐field‐induced tilting of the energy bands. These observations clearly demonstrate the FK effect in the GeSn active layer and electrically controlled optical modulation in the MIR region for the GeSn EAM. From the spectra, two main oscillation characteristics were observed around 1730 nm and 2000 nm, which are associated with direct optical transitions from the light‐hole band to the bias (Fig. 2(b)) and at a swing voltage of , where / T 0 5 conduction band ( LH cΓ ) and from the heavy‐hole band to the conduction band (LH) 0.715 eV ( HH cΓ ), respectively. The transition energies were determined to be  gE  and gE (HH) 0.624 eV  from ( ) / sT V T  0  . The splitting of the HH and LH bands is caused by 0 the compressive strain in the GeSn active layer (discussed later). Figure 2(b) shows the transmittance spectrum of the GeSn EAM under the zero‐bias condition. Figure 2(c) reveals the direct transition energy shift as a function of the applied electric field extracted from Fig. 2(a). The result indicates that the transition energy shift for both the LH cΓ and HH cΓ transitions increases with the applied electric field. The FK shift for the LH cΓ transition is greater than that of the HH cΓ transition, which can be primarily attributed to the smaller effective mass of LH than that of HH. From the modulation level spectra in Fig 2(a), high modulation levels of 1.05% at 1918 nm and 0.57% at 2066 nm were obtained, corresponding to extinction ratios of 0.127 dB / μm and 0.688 dB / μm , respectively. To demonstrate the modulation capacity in the MIR region, the AC modulation signal was , as shown in Fig. obtained from the GeSn EAM at 1 kHz acquired by an oscillator with 4 V sV 2(d), where clear dynamical modulation is observed. For EAMs, the modulation speed is limited by the RC time delay and can be improved by reducing the device footprint [22], thus achieving high‐speed MIR optical modulation. We then estimated the bandwidth of the GeSn EAM as a function of the device diameter using f RC  1 2 RC   1 2  t R A (1) where C is the intrinsic depletion capacitance,  is the permittivity, R is the resistance, and A and t are the area and the thickness of the GeSn active layer, respectively. By choosing a standard load resistance of R=50 Ω, which is widely used in microwave measured systems, the bandwidth of the GeSn EAM as a function of the device diameter was calculated, and the results are depicted in Fig. 2(e). The results show that the modulation speed can be significantly enhanced by decreasing the device diameter, and a high modulation speed of fRC>10 GHz is achievable for D<30 µm. 6 Figure 3. (a) Change in the absorption coefficient of the GeSn EAM at different swing voltages. (b) Absorption ratio of the GeSn active layer at different swing voltages. The inset shows the absorption coefficient spectrum under the zero‐bias condition. Franz‐Keldysh effect in GeSn. To analyze the FK effect, the absorption coefficient change (  ) with different swing voltages for the GeSn active layer was extracted from the modulation level spectra using [25]     1ln 1   t  ) ( sT V  T 0    (2) where t is the thickness of the GeSn active layer, and the result is depicted in Fig. 3(a). The  spectra clearly show that the magnitude increases with the swing voltage, but the magnitude tends to saturate for with significant changes in the absorption coefficient occurring at sV  those obtained from Ge [13], mainly because of the strain‐induced HH‐LH splitting that weakens the oscillator strength in the FK effect near the absorption edge. , e.g., 254 cm‐1 at 1923 nm and 140.61 cm‐1 at 2068 nm. These values are smaller than 6 V 10V sV essential. Thus, the absorption ratio, While a high extinction ratio is favorable for all EAMs, a low insertion loss is equally 0 being the absorption coefficient at zero bias, is usually used as the figure‐of‐merit for characterizing EAMs and for determining the optimal working region. Figure 3(b) depicts the absorption ratio spectra with different swing /  0 , with 7 voltages for the GeSn active layer, where the inset shows the 0 spectrum experimentally obtained from the responsivity measurement (Supporting Information). The result shows that /  increases with higher swing voltages. The maximum absorption ratio of 1.8 was 0 , which is equivalent to a scaling performance of a 3.01‐dB obtained at 2160 nm with 10 V  sV extinction ratio with a 1.67‐dB insertion loss for a 100‐μm‐long device. Despite the smaller  , value is comparable with, or even better than, Ge‐based EAMs [17, 26]. the obtained /  0 This behavior can be explained by the contribution of the indirect transition to the absorption coefficient. In pure Ge, the L‐conduction band lies below the Γ‐conduction band by a significant energy separation of LE  136 meV . As a result, there is usually a long indirect L )L gE , where (    permanent high absorption coefficient ( absorption tail extending below the direct transition band edge, which contributes to a gE is the indirect bandgap L [27]) near the direct‐gap absorption edge. Consequently, Ge EAMs usually suffer from relatively high insertion loss and a limited absorption ratio. In our GeSn EAM, however, the energy LE between the two valleys is considerably reduced to 85 meV, leading to a difference L near the direct‐gap absorption edge. As a result, the insertion loss is reduced, and the absorption ratio is increased. Across the wavelength range of 2067 -- 2208 nm in Fig. 3(b), the absorption ratio is always greater than 1 for . This result implies that significantly reduced 2 sV  10 V the extinction ratio can indeed be greater than the insertion loss, which is beneficial for achieving high‐performance optical modulation. We thus define this 141‐nm‐wide range as the operating regime of this device. Moreover, the optimal working regime of this GeSn EAM perfectly matches the emerging 2‐μm MIR optical communication band [1, 28] and 2‐μm lidar systems [29], making it ideally suitable for MIR optical communication applications. 8 Figure 4. Calculated direct and indirect interband transition energies for pseudomorphic Ge1‐ xSnx on Ge. Theoretical modeling for modulation range. The FK effect observed in GeSn in this study enables further development of MIR EAMs on Si. First, because the direct bandgap of Ge1‐xSnx can be controlled by adjusting the Sn concentration, the working region of GeSn‐based EAMs is expected to be "tunable" in the MIR region for a wide range of applications. To investigate the effects of Sn alloying, we calculated the direct bandgap energy of pseudomorphic Ge1‐xSnx on Ge considering the strain effects using the model solid theory and deformation potential theory [25, 30] (Supporting Information), and the results are depicted in Fig. 4. Despite the compressive strain ( ), the direct bandgap energy can be considerably reduced with increasing Sn content. In addition, the compressive strain splits the valence band, pushing the HH band above the LH band. As a result, the HH→cΓ transition is the lowest transition that defines the direct‐gap absorption edge of the GeSn active layer, which is the working region of the GeSn EAM. The calculation indicates that an Sn content of 2.8% is required to redshift the direct absorption edge to the MIR range for optical modulation. Up to now, GeSn alloys with Sn compositions >15% have been experimentally demonstrated [8]. Therefore, with a Sn composition range of 2.8 -- 15%, optical modulation in the broad spectral range of 1.8 -- 4.26 μm can be achieved for a wide range of applications. 0.143x   9 Discussion. In summary, we have experimentally demonstrated the first GeSn MIR optical modulator on Si. The Franz -- Keldysh effect in MIR region was clearly observed. The spectral response can be tuned through bandgap engineering the GeSn alloy by incorporating various amounts of Sn into the active layer. At an Sn composition of 5.2%, optimal optical modulation in the MIR region of 2067 -- 2208 nm was achieved with an absorption ratio up to 1.8. In addition, the ability to turn the modulation range by adjusting the Sn composition should enable efficient GeSn electro‐absorption modulators operating at different mid‐infrared spectral ranges for a wide range of applications. We also anticipate that the GeSn/Ge heterostructures can be used to develop waveguide optical modulators for MIR silicon photonic integrated circuits. Our demonstration of GeSn mid‐infrared electro‐absorption optical modulators represent a remarkable step in the development of efficient Si‐based optical modulators, opening up new avenues for large‐scale MIR Si photonics based on CMOS compatible technology. Methods Sample growth. The samples used in this study were grown on p‐type double‐side polished 2 10 10 Si(001) substrates using molecular beam epitaxy at a base pressure of less than torr. The first step of the epitaxy process was the growth of a fully strain‐relaxed Ge virtual substrate (VS) using a two‐step growth technique, including a 100‐nm‐thick Si layer grown at 650°C, a 100‐nm‐thick Si layer grown at 350°C, a 60‐nm‐thick seed Ge layer grown at 350°C, followed by in‐situ annealing at 800°C for 5 min, and a 60‐nm‐thick Ge buffer layer grown at 550°C. Then, a 390‐nm‐thick B‐doped p‐type Ge layer was grown at 550°C. The growth temperature was subsequently decreased to 150°C for the growth of the 360‐nm‐thick GeSn layer, followed by the growth of a 190‐nm‐thick Sb‐doped n‐type Ge layer. The epitaxy growth was completed with the growth of a 3‐nm‐thick Si cap layer. Transmission experiments. The transmission experiments were carried out at room temperature using a broad‐band quartz‐tungsten‐halogen (QTH) lamp as the light source, which was filtered using a 1200‐nm high‐pass filter, and dispersed using a monochromator equipped with a 600‐line/mm grating blazed at 1600 nm. The dispersed light was then reshaped using an 10 adjustable aperture and focused onto the top surface of the device through a 20X objective; this process ensured that the beam size was smaller than the window of the device. A square‐ wave AC bias with a frequency of 1 KHz was applied on the device using a wavefunction generator. The light transmitted through the device was then focused on a LN2‐cooled InSb photodetector (1 -- 5 μm detection range) and converted to an electrical signal, which was read out using a lock‐in amplifier to determine the transmittance. Data availability. The data that support the finding of this work are available from the corresponding author upon request. REFERENCES 1. 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Electron. 2016, 22, 425‐433. 13 29. Refaat, T. F.; Ismail, S.; Koch, G. J.; Rubio, M.; Mack, T. L.; Notari, A.; Collins, J. E.; Lewis, J.; Young, R. D.; Choi, Y.; Abedin, M. N.; Singh, U. N. Backscatter 2‐µm Lidar validation for atmospheric CO2 differential absorption Lidar applications. IEEE Trans. Geosci. Remote Sens. 2011, 49, 572‐580. 30. Chang, G. E.; Chang, S. W.; Chuang, S. L. Strain‐balanced GezSn1−z -- SixGeySn1−x−y multiple‐ quantum‐well lasers. IEEE J. Quantum Electron. 2010, 46, 1813 -- 1820. ACKNOWLEDGMENTS This work at CCU was supported by the Ministry of Science and Technology, Taiwan (MOST) under project Nos. MOST 104‐2923‐E‐194‐003‐MY3 and MOST 106‐2628‐E‐194‐003‐MY2. The authors are grateful for Prof. Greg Sun at University of Massachusetts Boston for many insightful discussions. We also thank Dr. Hui Li at NTU and Yun‐Da Hsieh at CCU for assistance in the experiments. Author contributions G.E.C. conceived the initial idea of this work and designed the devices. H.H.C designed and prepared the materials used in this study and carried out material characterizations. J.H.L. and B.J.H. fabricated the devices and performed electrical and optical measurements. G.E.C. performed the band structure calculations. J.H.L. and G.E.C. performed the data analysis. G.E.C. and H.H.C. wrote the manuscript. G.E.C. supervised the entire project. Additional Information Supporting Information accompaning this paper is available. Competing interests: The authors declare no completing financial interests. 14 Supporting information for Mid-infrared GeSn Electro-Absorption Optical Modulators on Silicon Jun-Han Lin,1 Bo-Jun Huang,1 H. H. Cheng,2 and Guo-En Chang*,1 1Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High- tech Innovations, National Chung Cheng University, Chiayi County 62102, Taiwan 2Center for Condensed Matter Sciences, and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan Responsivity experiments and absorption coefficient 0.8 0.75 Photon energy (eV) 0.7 0.6 0.65 0.55 0.20 0.15 0.10 0.05 y t i v i t c e l f e R 0.00 1500 1650 1800 1950 2100 2250 Wavelength (nm) 0.3 0.2 0.1 ) W A / i ( y t i v s n o p s e R 0.0 1500 1650 1800 Wavelength (nm) 1950 2100 2250 Figure S1. Room-temperature responsivity spectrum of the GeSn p-i-n diode measured at zero- bias conditions. The inset shows the measured reflectivity spectrum of the device. Responsivity experiments were performed to obtain the zero-bias absorption coefficient ( 0a ) of the GeSn active layer. A QTH lamp was used as the light source, which was chopped at 200 Hz, filtered using a 1200-nm high-pass filter, dispersed using a monochromator equipped with a 600-line/mm grating blazed at 1600 nm, and then focused on the device in normally incident direction via a microscope. The generated photocurrent from the GeSn p-i-n diode under unbiased conditions was read out using a lock-in amplifier to enhance the signal-to-noise ratio for determining the responsivity ( R ). The reflected light from the device was collected using an reflR ). Figure S1 shows the extended-InGaAs photodetector for determining the reflectivity ( measured zero-bias responsivity spectrum of the device, and the inset shows the measured reflectivity spectrum. From the responsivity and reflectivity spectra, the absorption coefficient of the GeSn active layer could be related to the responsivity by [1] R  1   R refl  q  hc exp    t n n  1 exp     t   i i    (S1) where q is the elementary charge,  is the free-space wavelength, h is Planck's constant, n and nt are the absorption coefficient and thickness of the top n-type Ge layer, respectively, and i and it are the absorption coefficient and thickness of the GeSn active layer, respectively. Taking the absorption coefficient of Ge from Ref. [2], the absorption coefficient of the GeSn layer was extracted using Eq. (S1). Band Structure Calculation The band structures were calculated using model-solid theory and deformation potential theory [3, 4]. The parameters for GeSn were obtained by linear interpolation between those of Ge and α-Sn, as listed in Table S1. The average valence band energy (in units of eV) for bulk Ge1-xSnx related to Ge can be written as E vav (Ge Sn ) 0.69  x 1  x x Then, the spin-orbital splitting energy can be expressed as  (Ge Sn ) 0.29 0.51 x   1  x x (S2) (S3) The heavy-hole (HH), light-hole (LH), and direct conduction band edges ( E ) under strain can  then be determined as follows: E HH  E LH        vavE   3     P Q   E vav   3     P    1 2 Q  2       2 Q   9 Q 2   E      E vav   3     E  g  P  , c where P, Q, and ,cP  are strain-induced energy shifts expressed as P    a v P a  ,c c     xx zz   yy     xx zz   yy   Q   b v 2     zz 2   xx yy  (S4) (S5) (S6) (S7) (S8) (S9) In addition, gE  is the direct bandgap energy for unstrained Ge1-xSnx, and it can be expressed as E  g (Ge Sn ) x 1  x (1   ) x E (Ge)   g xE  g (Sn)  b x  (1  x ) (S10) where gE  (Ge) and gE (Sn) b  2.42 eV is the bowing energy [5]. In addition, are the direct bandgap energy of Ge and α-Sn, respectively, and xx , yy , and zz are the strains in the Ge1- xSnx layer. For pseudomorphic GeSn on Ge, the strain values can be calculated by   yy  xx a  (Ge) a a (Ge Sn ) x  1 x  (Ge Sn ) x 1  x  zz 2   C 12 C 11  xx (S11) (S12) where Here, (Ge) a 11C and and a (Ge Sn ) x 1  x are the bulk lattice constant of Ge and Ge1-xSnx, respectively. 12C are the stiffness matrix elements of Ge1-xSnx, and their ratio is [6] C 12 C 11  0.3738 + 0.1676 x  0.0296 x 2 (S13) Table S1: Parameters of Ge and α-Sn [4] Parameters Average valence band energy vavE (eV) Spin-orbital splitting energy  (eV) Direct bandgap energy gE (eV) Deformation potential energy Deformation potential energy Deformation potential energy Lattice constant a (Å) ca (eV) va (eV) vb (eV) References: Ge 0 0.29 0.8 -8.24 1.24 -2.9 5.6573 α-Sn 0.69 0.8 -0.413 -6.00 1.58 -2.7 6.4892 1. Oehme, M.; Widmann, D.; Kostecki, K.; Zaumseil, P.; Schwartz, B.; Gollhofer, M.; Koerner, R.; Bechler, S.; Kittler, M.; Kasper, E.; Schulze, J. GeSn/Ge multiquantum well photodetectors on Si substrates. Opt. Lett. 2014, 39, 4711-4714. 2. Palik, E. D. Handbook of Optical Constants of Solids; Academic: London, 1985. 3. Chuang, S. L. Physics of Photonic Devices; Wiley: New York, 2009. 4. Chang, G. E.; Chang, S. W.; Chuang, S. L. Strain-balanced GezSn1−z -- SixGeySn1−x−y multiple-quantum-well lasers. IEEE J. Quantum Electron. 2010, 46, 1813-1820. 5. Lin, H.; Chen, R.; Lu, W; Huo, Y.; Kamins, T. I.; Harris, J. S. Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy. Appl. Phys. Lett. 2012, 100, 102109. 6. Beeler, R; Roucka, R.; Chizmeshya, A. V. G.; Kouvetakis, J.; Menendez, J. Nonlinear structure-composition relationships in the Ge1−y Sny /Si(100) (y < 0.15) system. Phys. Rev. B 2011, 84, 035204.
1804.08707	1	1804	2018-04-08T20:52:12	Pseudospin-valley coupled edge states in a photonic topological insulator	[ "physics.app-ph", "cond-mat.mes-hall", "physics.optics" ]	Pseudo-spin and valley degrees of freedom (DOFs) engineered in photonic analogues of topological insulators (TI) provide potential approaches to optical encoding and robust signal transport. Here we observe a ballistic edge state whose spin-valley indices are locked to the direction of propagation along the interface between a valley photonic crystal and a metacrystal emulating the quantum spin Hall effect. We demonstrate the inhibition of inter-valley scattering at a Y-junction formed at the interfaces between photonic TIs carrying different spin-valley Chern numbers. These results open up the possibility of using the valley DOF to control the flow of optical signals in 2D structures.	physics.app-ph	physics	Pseudospin-valley coupled edge states in a photonic topological insulator Yuhao Kang1,3, Xiaojun Cheng1,3, Xiang Ni2,3, Alexander B. Khanikaev2,3, Azriel Z. Genack1,3 1Department of Physics, Queens College and Graduate Center of the City University of New York, 65-30 Kissena Blvd, Flushing, NY 11367, USA 2Department of Electrical Engineering, Grove School of Engineering, The City College of the City University of New York, 140th Street and Convent Avenue, New York, NY 10031, USA 3Graduate Center of the City University of New York, New York, NY 10016, USA Email: [email protected]; [email protected] Pseudo-spin and valley degrees of freedom (DOFs) engineered in photonic analogues of topological insulators (TI) provide potential approaches to optical encoding and robust signal transport. Here we observe a ballistic edge state whose spin-valley indices are locked to the direction of propagation along the interface between a valley photonic crystal and a metacrystal emulating the quantum spin Hall effect. We demonstrate the inhibition of inter- valley scattering at a Y-junction formed at the interfaces between photonic TIs carrying different spin-valley Chern numbers. These results open up the possibility of using the valley DOF to control the flow of optical signals in 2D structures. Topological concepts have recently entered the realms of photonics. Topological states of light engineered in a variety of systems, from magnetic photonic crystals to silicon ring resonators and waveguide arrays, and across the electromagnetic spectrum, from the microwave to the optical domains, have been shown to exhibit fascinating phenomena such as robust guiding and quantum entanglement of photons1–8. These demonstrations and the great potential for 1 photonics applications are spurring research in the optical domain. However, one significant problem in scaling down topological designs is the complexity of their geometries, which make them hardly feasible with present-day nano-fabrication techniques. Aiming at simpler designs, interest has shifted recently to alternative approaches to topology which would emulate topological states in photonics by using lattice symmetries and associated synthetic DOF that could be achieved in structures whose fabrication is less challenging. One of the approaches that is attracting significant attention is based on the use of the valley DOF. Valley is an additional discrete synthetic degree of freedom in crystals with triangular and hexagonal point symmetry. Valley refers to one of the two high-symmetry points of the Brillouin zone, K and K' points and their immediate neighborhoods, and can be viewed as a pseudo-spin DOF. Conservation of the valley DOF under a broad class of perturbations9 makes it suitable for emulating photonic topological states and facilitates the design of valley Hall photonic topological insulators (VHTIs)9–15. The valley DOF has recently gained prominence in condensed matter physics in the context of valleytronics (i.e. valley-locked electronic propagation) in a wide variety of materials16–20. In VHTIs, one considers a restricted topological phase of photons that is defined at only one of the two valleys and is characterized by a valley projected half-integer Chern numbers associated with the valley: 𝐶𝐾/𝐾′ = ±1/2. Such a restricted topology is often sufficient and leads to edge states at the domain walls between parity conjugate VHTIs with opposite valley Chern number10. To distinguish such edge states from states of conventional electronic and photonic TIs, such edge states are also referred to as valley-Hall kink states21–25. 2 The control of currents by manipulating the valley DOF has been successfully realized in novel electronic devices such as the valley splitter and the valley valve26–28. These developments have further stimulated the exploration of the valley DOF of photons. The interest in generating fully valley-polarized electromagnetic waves stems from potential applications in valley-based information encoding and processing29,30. However, in order to manipulate the valley DOF, it is necessary to properly break the valley degeneracy. For instance, a photonic valley splitter was achieved by utilizing the valley-dependent trigonal warping distortion in graphene bands27,31. Previous publications have suggested that a valley photonic crystal (VPC) could be created by lifting inversion symmetry9,32. These results show that valleytronics may provide a practical approach for realizing a full control of photonic states in valley Hall systems. The development of photonic TIs opens up the possibility of extending valleytronics to optics where the valley DOF is combined with the pseudo-spin DOF responsible for the topological order. Although interest in the valley DOF in the context of topological photonics is increasing rapidly, the properties of such hybrid topological states combining valley-polarized waves with other synthetic degrees of freedoms in photonic TIs have not been realized experimentally. Here we demonstrate that the combination of valley and pseudo-spin degrees of freedom in one system enables unidirectional states along the interface of VPC and photonic TI33,34 with entangled valley and pseudo-spin degrees of freedom. Based on this property, we construct a spin-valley polarized splitter for the edge states, which can be used to rout signals in optical networks and interconnects. 3 To create valley-polarized edge states confined to an interface, we juxtapose a VPC and a topological photonic crystal (upper region in Figs. 1a, b) possessing a complete topological band gap. The elements of the topological crystal represent copper rods with concentric collars, as shown in Fig. 1c. The rods can be pushed to touch one or the other of the bounding copper plates or to lie between the plates. When the collar deviates from the midpoint between the plates, ơh symmetry is broken and a bandgap opens at Dirac points. Reducing ơh symmetry leads to coupling between transverse-electric-like (TE) and transverse-magnetic-like (TM) modes, in which the Ez and Hz components vanish, respectively. The eigenstates of the structure are then a mixture of TE and TM modes whose in- and out-of-phase combinations define pseudo-spin up and down states35,36. This rod-collar-lattice emulates the quantum spin Hall (QSH) effect37,38, with the bulk bands (with collars at the bottom, Fig. 1c) acquiring spin-Chern numbers 𝐶↑↓ = ±0.5 in both the K and K' sectors35. The structure9 emulating the QVH effect is shown in the lower region of Fig. 1b. Copper triangular prism pairs with a gap in the center (Fig. 1d) are arranged in a triangular lattice. A bandgap appears for this orientation of the triangles39, as shown in the bulk photonic band structure (Fig. S1 in Ref [33]). The dimensions of the triangular prisms are selected so that there is an appreciable overlap of the bandgap of the rod-collar-lattice and the triangle-lattice. As a result, electromagnetic waves propagating in the metawaveguide within this frequency range are confined to the interface and decay exponentially into the surrounding domains. A novel feature of this interface is that the edge states are spin-valley-polarized, providing an additional tool for guiding transport as compared to a trivial 1D channel. 4 The TE and TM modes in the triangular structure are decoupled owing to the ơh and C3 symmetry of the triangular prism10. The TE and TM modes are designed to be degenerate near the K/K' valleys (Fig. S1 in Ref [33]). The triangular unit cell differs from a trivial photonic crystal in that it breaks inversion symmetry. This gives rise to different local Chern numbers in the two valley sectors. The Berry curvature40,41 for the TE mode around the two valleys is shown in Figs. 1e-f. The local valley Chern numbers in the K/K' sectors are ±0.5, while the global Chern number vanishes due to TR symmetry. Similar results are obtained for the TM mode as a result of the degeneracy of the TE and TM modes. These numerical results agree with the theoretical value obtained using the effective Hamiltonian method9. We note that rotating the triangular prisms by 180 deg. reverses the valley Chern number for the TE/TM modes from CK/K'=±0.5 to CK/K'=∓0.510. The bulk-interface correspondence principle ensures the presence of edge states when there is a difference in the topological invariant across the interface42–44. As a result, the Chern number difference is (-0.5)-0.5=-1 for the super-cell shown in Fig. 2a in the spin-down sector of the K valley. This corresponds to a backwards propagating spin-down state at the K valley. Similarly, a forward spin-up state exists at the K' valley. These counter-propagating edge states are protected by TR symmetry and are immune to backscattering45,46 in the absence of a magnetic field and magnetic materials. Edge states and disorder effects As a first step, we demonstrate the existence of edge states by measuring the transmission spectrum. Measurements are performed for a zigzag cut of the crystal, as shown in Fig. 1b, because reflection of the edge state at the interface between the metawaveguides and air is inhibited in this case9. The source and detector dipoles are inserted vertically through small 5 holes in the copper plate. A comparison of transmission spectra for a straight line and a path with a 60-deg turn (Fig. 3c) is shown in Fig. 2c. Although the intensity near the left edge of the bandgap (~20.3 GHz) decreases by 5 dB in the case of the bent path relative to the intensity for the straight path, the signal at the middle of the bandgap is the same for both paths. The high- transmission plateau inside the bandgap (shaded part in Fig. 2c) reflects the confinement of the edge state. This contrasts with a drop in transmission of ~15 dB in the pass band. In addition, the strong suppression of transmission in the bulk of the TI lattice and the lattice of triangles, which is seen in Fig. 2d, confirms that the observed transmission is due to the excitation of the edge state. This proves the robustness of the edge state encountering a bent path. Strong suppression of backscattering at a corner is a signature of topologically protected edge states and makes it possible to realize unidirectional electromagnetic transport along a complex path. Structural defects are inevitable in fabricated materials. Considering that the spin and valley indices of the states are locked to the transport direction, the edge state reflected at a turning point or at defects will experience both inter-valley mixing and spin flipping. Because of the large separation in momentum space between K and K', it is reasonable to suppose that the valley index is conserved to a high degree. We will further verify whether the edge states are robust in the face of disorder that breaks spin conservation and so is analogue to applying an external magnetic field for electrons. Such disorder could be introduced by displacing the collar from one of the two plates in the rod-collar-lattice (Fig. 3a). The eigenmodes then become hybrids of spin-up and spin-down states35. The strength of backscattering and the conservation of valley in the presence of disorder can be determined from measurements of the delay time. The band structure (Fig. 2a) gives a 6 nearly constant value of the group velocity across the band gap, 𝑣𝑔 = 𝜕𝜔 𝜕𝑘 of 1.06 × 108 m/s. The group velocity can be extracted from the linear increase of the delay time with position along the domain wall. The delay time is equal to the spectral derivative of the phase47, 𝜏(𝜔, 𝑥) = 𝑑𝜑(𝜔,𝑥) 𝑑𝜔 , where 𝜑 is the phase shift of the electric field between the source and detector, ω is the angular frequency, and x is the distance from the source. The average delay time 〈𝜏〉 is obtained from an average over seven configurations. The inverse of the slopes determined from the data in Fig. 3d for straight or bent paths are in agreement with the calculated group velocity. This demonstrates that the wave propagates ballistically along the bent paths. When some of the collars are positioned between the two plates, the measured velocity is found to be 9.86 × 107 m/s, which is close to the value of 1.04 × 108 m/s in the ordered sample. This shows that valley and spin are conserved on the scale of the metawaveguide used in the experiment. However, when disorder is introduced by having the rods touch the opposite plate, the mean dwell time increases (green line in Fig. 3d) compared to the dwell time for the edge state of the ordered crystal. This indicates that the wave follows longer trajectories because of scattering (Fig. 3b) and the spin-valley indices are not conserved. These measurements reveal the limits of robustness of the edge states. Valley-dependent waveguiding For photonic communications, the valley DOF can be used to encode a binary logic, 0 and 1. A valley splitter will then play an important role in filtering signals by their binary state. To achieve such functionality, we incorporate three different domains in a single platform: lattices with collars up or down (collars in contact with the upper or lower plate) and a triangle-lattice. 7 The resultant Y-junction provides a basis for realizing the valley splitter10,15. The wave is injected into port 1, as shown in Fig. 4a. Two spin-down states at both valleys (Ψ𝐾/𝐾′ ↓ ) are supported along the transport direction in the channel between collars-up and collars-down lattices33, while each output channel of the Y-junction only supports a spin-down state in single valley ↓ (𝜑𝐾/𝐾′ ). According to the edge band diagram (Figs. 2a,b), edge state 𝜑↓ is exactly at the K/K' valley at 21 GHz. For the Ψ↓ state, this frequency should be 21.5 GHz (Fig. 2 in Ref.[33]). Since the pseudo-spin DOF does not determine the path here, the edge state will follow a path based on the valley polarization, provided that inter-valley scattering can be neglected at the Y- junction. To test this, we control the valley index of the source and compare the transmission spectra at the two outputs. In order to generate a single-valley signal at port 1, the wave first goes through a filter (a path segment between a rods-down lattice and a triangle-lattice), so that all incoming modes are evanescent except for the edge mode. The valley of the input edge state can be changed by rotating the triangles by 60 deg. (from Fig. 4b to 4d). In the case of Fig. 4b, the input mode carries K' valley. The edge states from intersection to port 2/3 support K'/K valley states. If the valley is conserved at the intersection point, the wave should only follow the path to port 2. As expected, the transmission drops by ~10 dB around 21-21.5 GHz at port 3 (red line in Fig. 4c). As the frequency is shifted away from the 21-21.5 GHz range, the signal in port 3 remains small compared to the high transmission plateau of port 2 (blue line in Fig. 4c). This shows that the inhibition of inter-valley scattering is strongest for the edge states exactly at K/K', i.e. the waves largely maintain their original valley indices. To further demonstrate this, we conduct a contrast experiment. When the valley of the input signal is changed to K (Fig. 4d), we see a similar phenomenon with port 2 and 3 exchanging roles (Fig. 4e). The dip of the signal 8 in port 2 at around 21.2GHz is ~30 dB below the signal in port 3, shows the prohibition of propagation along the path to port 2. Simulations carried out with COMSOL Multiphysics are in agreement with measurement. In this experiment, the selection of the path followed by the wave is decided purely on the basis of the valley DOF. Distinct valley signals are guided to different outputs with a contrast of 20-30 dB. This indicates that the valley DOF of electromagnetic waves is robust at the Y-junction. The experimental results presented demonstrate the robustness of the edge states along the interface between QSH-like and QVH-like photonic crystals. Energy entering the system can move along the bent path without appreciable scattering or additional delay. The Y- junction integrated into such system can then serve as a fault-tolerant valley splitter. While previous bulk valley splitters27,32 could only steer valley-polarized waves in fixed directions (such as the Γ𝐾 or Γ𝐾′ directions), the Y-junction demonstrated here is reconfigurable and the shape of the edge can be laid out in forms that are not restricted by the orientation of the unit cell of the 2D platform. This provides a potential powerful platform for optical communications in which light can be steered to any point based upon the valley degree of freedom. Acknowledgments The work of Y.K., XC and A.Z.G. is supported by the National Science Foundation (NSF/DMR/- BSF: 1609218). X.N. and A.B.K. are supported by the National Science Foundation (grants CMMI-1537294 and EFRI-1641069). Author contributions 9 All authors contributed extensively to the work presented in this paper. Competing Financial Interests The authors declare no competing financial interests. 10 Methods The Berry curvature is calculated using the numerical eigenstates obtained with use of the COMSOL RF module. We apply the Floquet periodic boundary condition on the unit cell and sweep k-space using COMSOL eigenfrequency sector. The Berry curvature is given by Ω𝑣 = ∇𝑘 × 𝐴𝑣 , where 𝐴𝑣 = −𝑖⟨𝐄𝑣(𝑘)∇𝑘𝐄𝑣(𝑘)⟩, with subscript 𝑣 representing either valleys K or K', and 𝐄𝑣(𝑘) represents the 𝑣-th eigenstate of the TE/TM band. To obtain the edge bands between the QSH and QVH domains, we consider a 40×1 supercell with Floquet periodic boundary conditions. The upper half involves rod/collars and lower half is triangular prisms. Kx is scanned from –π/a to π/a in 121 steps. Twenty eigenfrequency points around 21 GHz are calculated. Frequency points corresponding to edge states at the upper/lower edge of the supercell are removed. The simulated transmission profiles in Figs. 3,4 are obtained using COMSOL frequency sector at 21 GHz. Perfectly-matched-layer boundary conditions are used in Figs. 3a-c and second-order scattering boundary in Figs. 4b,d. Spectra of the field transmission coefficient were taken using an Agilent PNA-X vector network analyzer. The output of the vector network analyzer is amplified before being launched into the sample. Two types of holes are drilled into the copper plates. The antenna is inserted into holes with diameter of 1.1 mm. A second set of holes with diameter of 3.3mm is used to fix the rod and triangular prisms,. The triangular prisms are fixed by screws and can be rotated. Both source and detector antennas are inserted ~ 8 mm into the small holes in the copper plate. Since the wave intensity oscillates along the interface, we average measurements of intensity 11 over 20 points in a small region near the source and the output (5 successive points on 4 parallel lines near the boundary). We apply a moving average to the transmission spectra to smooth fluctuations. Each frequency point is replaced by the average value of the 15 nearest data points corresponding to a frequency interval of 3.75 𝑀𝐻𝑧. The phase of the electric field is calibrated by subtracting from the measured phase the phase measured with the source and detector antennas in close proximity in air. The spectral derivative of the phase, 𝑑𝜑 𝑑𝜔 , is obtained from the average value of Δ𝜑 Δ𝜔 over the bandgap (20.3~21.3 GHz), with ∆𝜔 = 7.5 𝑀𝐻𝑧. 12 Figures Fig. 1. Schematic of the sample configuration. (a) Side view of the structure. (b) Arrangement of two crystals with the two copper plates on top and bottom removed. Lattice constant 𝑎 =1.0890 cm (c,d) Unit cells of two crystals emulating the QSH and QVH effects. Dimensions of unit cells: 𝐻 =1.0890 cm, ℎ𝑐 =0.3580 cm, 𝑑𝑐=0.6215 cm, 𝑑0=0.3175 cm, ℎ=0.5040 cm, 𝑔=0.0810 cm, 𝑙=0.5020 cm. (e,f) Berry curvatures of triangular lattice (valley Hall crystal) for TE mode in the valence band near the K and K' points. 13 Fig. 2. Edge states between valley-Hall and quantum spin-Hall domains. (a,b) Edge band diagram of a 40×1 supercell, with an interface between the rod-collar-lattice (collars contact the lower plate) and triangle-lattice. There are two gapless edge states which correspond to pseudospin-up (↑, red line) and down (↓, blue line) states at the K' and K points, respectively. A bandgap spans the frequency range from ~20.3 GHz to ~21.3 GHz. (c) Transmission spectra along the straight and bent paths. The shaded region indicates the bandgap. (d) Transmission through the bulk of the rod and triangle lattices. 14 Fig. 3. Propagation in the presence of disorder. Ten randomly selected rods in a small region (red box) near the boundary in each random configuration. (a) The collars on the pushed rods are not in contact with either copper plate, which breaks spin conservation. Waves passing through the disordered region continue to propagate in the forward direction. (b) The rods are moved so that the collars touch the opposite plate. The wave experiences strong backscattering so that a speckle pattern develops due to interference. (c) Simulated transmission profile in the bent path. (d) Comparison of dwell time along the domain wall in four cases. vg, the inverse of the slope, is the group velocity when propagation is ballistic. Negative values of 〈𝜏(𝜔, 𝑥)〉 indicate that the pulse shape in the limit of zero bandwidth is reshaped. 15 Fig. 4. Topological Y-junction operating as valley filter with valley-splitting wave transport. (a) Schematic of Y junction formed by three domains. 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1811.02343	1	1811	2018-11-06T13:35:29	Low-Power (1T1N) Skyrmionic Synapses for Spiking Neuromorphic Systems	[ "physics.app-ph", "physics.comp-ph" ]	In this work, we propose a `1-transistor 1-nanotrack' (1T1N) synapse based on movement of magnetic skyrmions using spin polarised current pulses. The proposed synaptic bit-cell has 4 terminals and fully decoupled spike transmission- and programming- paths. With careful tuning of programming parameters we ensure multi-level non-volatile conductance evolution in the proposed skyrmionic synapse. Through micromagnetic simulations, we studied in detail the impact of programming conditions (current density, pulse width) on synaptic performance parameters such as number of conductance levels and energy per transition. The programming parameters chosen used all further analysis gave rise to a synapse with 7 distinct conductance states and 1.2 fJ per conductance state transition event. Exploiting bidirectional conductance modulation the 1T1N synapse is able to undergo long-term potentiation (LTP) & depression (LTD) according to a simplified variant of biological spike timing dependent plasticity (STDP) rule. We present subthreshold CMOS spike generator circuit which when coupled with well known subthreshold integrator circuit, produces custom pre and post-neuronal spike shapes, responsible for implementing unsupervised learning with the proposed 1T1N synaptic bit-cell and consuming ~ 0.25 pJ/event. A spiking neural network (SNN) incorporating the characteristics of the 1T1N synapse was simulated for two seperate applications: pattern extraction from noisy video streams and MNIST classification.	physics.app-ph	physics	Low-Power (1T1N) Skyrmionic Synapses for Spiking Neuromorphic Systems Tinish Bhattacharya, Sai Li, Yangqi Huang, Wang Kang, Weisheng Zhao and Manan Suri 1 Abstract -- In this work, we propose a '1-transistor 1- nanotrack' (1T1N) synapse based on movement of magnetic skyrmions using spin polarised current pulses. The proposed synaptic bit-cell has 4 terminals and fully decoupled spike transmission- and programming- paths. With careful tuning of programming parameters we ensure multi-level non-volatile con- ductance evolution in the proposed skyrmionic synapse. Through micromagnetic simulations, we studied in detail the impact of programming conditions (current density, pulse width) on synaptic performance parameters such as number of conductance levels and energy per transition. The programming parameters chosen used all further analysis gave rise to a synapse with 7 distinct conductance states and 1.2 fJ per conductance state transition event. Exploiting bidirectional conductance modulation the 1T1N synapse is able to undergo long-term potentiation (LTP) & depression (LTD) according to a simplified variant of biological spike timing dependent plasticity (STDP) rule. We present subthreshold CMOS spike generator circuit which when coupled with well known subthreshold integrator circuit, produces custom pre and post-neuronal spike shapes, responsible for implementing unsupervised learning with the proposed 1T1N synaptic bit-cell and consuming ∼ 0.25 pJ/event. A spiking neural network (SNN) incorporating the characteristics of the 1T1N synapse was simulated for two seperate applications: pattern extraction from noisy video streams and MNIST classification. Index Terms -- Skyrmion, SNN, STDP, Neuromorphic Hard- ware, Synapse. I. INTRODUCTION neuromorphic systems has gained a lot of H ARDWARE implementation of biologically inspired interest in the past few years [1], [2]. Neuromorphic engineering aims to achieve intelligent computing by taking inspiration from complex neural/synaptic circuits and their biophysical mechanisms, using nano-electronic/magnetic devices [3], [4]. The nanodevices when made to follow certain conductance (weight) modulation rules within a connected network lead to equivalent trained neural networks that may be used for 8 1 0 2 v o N 6 ] h p - p p a . s c i s y h p [ 1 v 3 4 3 2 0 . 1 1 8 1 : v i X r a Manuscript received 30 March 2018. This research was supported in part by the Department of Science and Technology, Science and Engineering Research Board - Extramural Research Grant, Government of India Grant and Faculty Interdisciplinary Research Project - IIT-D grant and in part by the National Natural Science Foundation of China (Grant 61627813 and 61571023), and the International Collaboration Project (Grant 2015DFE12880 and B16001). T. Bhattacharya and S. Li contributed equally to this work. (Corresponding Author: Manan Suri and Weisheng Zhao). T. Bhattacharya and M. Suri are with the Department of Electrical En- gineering, Indian Institute of Technology - Delhi, 110016 India (e-mail: [email protected]). S. Li is with Shenyuan Honors College and BDBC, Fert Beijing Research Institute of Beihang University, Beijing, 100191 China. Y. Huang, W. Kang and W. Zhao are with BDBC, Fert Beijing Research Institute, Beihang University, Beijing, 100191 China (e-mail: [email protected]). different training and inference tasks [5], [6]. Various emerging non-volatile nanodevices are currently being investigated for synaptic applications; Conductive-Bridge Memory (CBRAM) [5], Phase Change Memory (PCM) [7], Magnetic-Tunnel Junction (MTJ) [8], domain walls [9] and oxide based resistive switching memory (OxRAM) [6], [10]. Among emerging spin- tronic nanodevices, magnetic skyrmions have gained a signif- icant amount of interest owing to their small size, topological stability and ultralow current densities [11], [12]. Skyrmions are topologically stable spin textures which have been experi- mentally observed in Heavy metal (HM)-Ferromagnetic Metal (FM) heterostructure and bulk ferromagnets [13], [14]. They have been proposed as possible post-Moore candidates for logic [15], [16] and storage [17] applications. They have also been proposed for emulating the properties of leaky-integrate and fire neurons in [18], [19]. However for a device to behave as analog (multilevel) synapse, it should have multiple pro- grammable non-volatile conductance states [10]. Controlled conductance variation using skyrmions on nanotracks was first reported in [20]. However in [20] the conductance states reported were a strong function of the inter programming-pulse delay, thus making the intermediate synaptic weights transient or not truly non-volatile. Also to the best of our knowledge no work has yet shown a pathway for implementing online unsupervised learning with multilevel skyrmion on nanotrack synapses. In this work we present a modified nanotrack structure which makes the overall synapse a 4-terminal device and completely decouples the spike transmission and programming paths. This simplifies the synaptic circuit and results in a 1T1N like configuration. We then study in detail the impact of two different programming parameters: pulse width and pulse amplitude, on the number of distinct conductance levels and energy per transition of the proposed Skyrmion on Nanotrack (Sk-N) synapse. Using this optimized nanotrack and pro- gramming parameters we propose a 1 Transistor/1 nanotrack (1T1N) Skyrmion on Nanotrack (Sk-N) based synaptic bit-cell that changes the conductance of the synapse according to a modified version of the biological unsupervised STDP learning rule [21]. We also design peripheral subthreshold CMOS neuron circuit comprising of following blocks: current scaling circuit, Differential Pair Integrator adopted from [22], [23], comparator and a custom spike generator unit. The current scaling circuit used for this work is based on the Gilbert normalizer circuit [24] and was recently shown to work with two-terminal differential memristive synapses [25]. In [25], the circuit was included inside each synapse bit-cell. In this work, we show how the same circuit can be used effectively for 4- Terminal non-differential Sk-N based synapses by coupling it with each post-neuron rather than the synaptic bit-cells, thus saving silicon footprint. The spike generator unit is able to generate custom pre and post-neuronal spikes that lead to the modified STDP learning rule. On combining all the circuits we demonstrate spike transmission, neuronal integration and simplified STDP based conductance modulation in a single synaptic bit-cell through circuit simulations. The circuit sim- ulations were done in CADENCE Spectre, using TSMC 65 nm technology node PDK. The characteristics of our 1T1N synaptic bit-cell and programming circuit were used in system- level simulations to demonstrate online unsupervised learning in a Spiking Neural Network (SNN) in the MATLAB based neuromorphic hardware simulator, MASTISK [26]. The task involved pattern recognition in noisy video streams and multi- class classification of handwritten digits (MNIST). II. SKYRMION ON NANOTRACK A. Skyrmion Physics The creation of a skyrmion can be attributed to the competition between ferromagnetic exchange coupling and DzyaloshinskiiMoriya interaction (DMI) in magnetic systems. These systems have breaking or lacking inversion symmetry in bulk lattices [14] or at the interface of thin films [13] respectively. The DMI interaction between two neighbouring atomic spins in a lattice having large Spin - Orbit Coupling (SOC) is give by: H = − D.(Si × Sj), (1) where D denotes the DMI vector, and Si and Sj are , respectively. In this work we the spins on site i and j are mainly concerned with skyrmions created in interface of ultrathin films (also known as nanotracks) comprising of a Ferromagnetic-Metal (FM) layer deposited on a Heavy-Metal (HM) layer. In such systems spin polarised current is used to disturb the magnetization equilibrium of the metal layer and induce topological transition of the magnetic textures. This when facilitated by DMI leads to creation of skyrmions. Skyrmions on nanotracks can be moved by either Current- In-Plane (CIP) or Current-Perpendicular-to-Plane (CPP). In this work the latter case is implemented due to its energy efficiency [27]. According to this method a charge current flowing through the HM layer induces a vertical spin current due to Spin-Hall Effect (SHE) which is responsible for moving the skyrmions in the FM layer by exerting spin torque. Due to the non-linear spin texture of skyrmions, there will be definite change in the site-dependent spin mixing of magnetic states in the ferromagnetic environment. This can be detected using Tunneling Magneto Resistance (TMR) measurements [28]. 2 Fig. 1: Schematic of proposed skyrmion on nanotrack based synaptic device with completely decoupled read and program paths. stronger PMA than the FM layer is used as an energy barrier for the skyrmions, thus seperating the nanotrack into two parts: pre-synapse and post-synapse. Please note that the terminolo- gies pre-synapse and post-synapse have been adopted from [20]. They just refer to the two sides of the synapse separated by the PMA barrier and have no relation with pre-neuron and post-neuron. MTJ like structures are used at either ends of the nanotrack for nucleating (write-MTJ) and reading (read- MTJ) skyrmions respectively. The write-MTJ (pinned layer is the portion of FM layer below it) is used to introduce spin- polarised current into the pre-synapse region in order to create skyrmions. The read-MTJ has its free layer separated from the FM layer with an insulating magnetic material that allows magnetic coupling but prevents current flowing across it. The pinned and free layers of the Read-MTJ are separated by non- magnetic spacer. This decouples the read and write/program paths of the nanotrack completely. The benefit obtained by doing so is discussed in Section IV. The read current (ISyn) flowing through the write-MTJ (shown in Fig. 1) will be proportional to the conductance that is determined by the spin configurations of the post-synaptic FM layer and the free and pinned layers of the read-MTJ. Since the spin direction of the FM layer is opposite to that of the pinned layer of read-MTJ, it is in Anti-parallel (AP) state in the absence of skyrmions. As the net spin of a skyrmion in the y direction is zero, its presence in the post-synaptic region is equivalent to removal of a portion of the FM layer along with its spin. This leads to a less AP nature of the read-MTJ and therefore an increase in conductance. Therefore higher the number of skyrmions in the post-synapse, higher is the conductance of the post-synapse and the corresponding read current flowing through it. Programming current IP (charge current) when passed through the HM layer, the spin current caused by it as a consequence of Spin Hall Effect (SHE) is responsible for moving the skyrmions from one end of the nanotrack to the other. B. Skyrmion on Nanotrack Synapse The concept of skyrmion on nanotrack synapse used for this work is shown in Fig. 1. It has ultrathin metallic films comprising of a Ferromagnetic Metal (FM) layer deposited on top of a Heavy Metal (HM) layer. The FM layer has Perpendicular Magnetic Anisotropy (PMA) in the direction specified by y (Fig. 1). A metallic capping layer with a C. Micro-Magnetic Simulation Framework The skyrmion-based artificial synaptic device was numeri- cally simulated by 3D magnetization dynamics in the Object Oriented MicroMagnetic Framework (OOMMF) software [29] which used the extended Landau-Lifshitz-Gilbert equation including spin transfer torques as follows [30]: 3 ) (2) dm dt = − γ0 m × heff + α(m × dm dt m × (p × m), + u t where γ is the gyromagnetic ratio, m = M MS is the reduced magnetization, hef f = H ef f is the reduced effective field, α MS is the Gilbert Damping Factor, u = γ0 , is the reduced Planck constant, j is the applied current density, P = 0.6 is the spin polarization, µ0 is the permeability of free space, e is the electron charge, p is the unit spin polarization direction and p = −y was set for driving the skyrmions. The parameters were extracted from experiments [30] for a 0.4 nm thick Co layer on a Pt substrate. µ0e jP 2MS In order to calculate the conductance of the post-synaptic region Tunneling Magneto Resistance (TMR) has been em- ployed. This is done by dividing the read - MTJ into multiple 2 nm × 2 nm cells in the x-y plane and calculating the conductance of each cell by Julliere's model [31]: G = G0( 1 + p2 cos θ 1 + p2 ) putting θ ⇒ π − θ 1 − p2 cos θ = G0( ), 1 + p2 (3) (4) where G0 is the conductance when the magnetization is per- fectly parallel to the reference layer, p is the spin polarization and θ is the magnetization of each cell with respect to the reference layer. However since in this work the spins of the reference layer of MTJ and FM layer are oppositely oriented, θ is replaced by π − θ leading to the form shown in Eq. 4. As a result the introduction of skyrmions in the post-synapse leads to θ being less than π which gives a higher value of G according to Eq. 4. TABLE I: Device parameters for the HM-FM heterostructure Parameter Ms A D α K P tf l × w ρ Description Saturation Magnetization Exchange Constant DMI Factor Gilbert Damping Factor Magnetic anisotropy Spin Polarization Thin Film Thickness Nanotrack Length and Width Resistivity of HM layer Value 580 kA/m 15 pJ/m 3 mJ/m2 0.3 0.8 MJ/m3 0.6 1 nm 820 nm × 280 nm 100 µΩcm [32] III. NANOTRACK PROGRAMMING PARAMETERS In the nanotrack simulations it was found that when skyrmions try to flow across the PMA barrier, there exists a competition between; driving force due to current, repulsive force due to nanotrack edge, PMA barrier and inter-skyrmion (Sk-Sk) interactions. If repulsive and driving forces are not optimized it leads to leaky movement of skyrmions across the barrier after the programming pulses are removed. This makes the conductance levels dependent on the inter-pulse delay as was the case in [20] and thus cannot be used for (a) (b) Fig. 2: Variation of number of conductance states and energy per conductance state transition with (a) current density and (b) pulse width of programming pulse. The red circle represents the programming parameter value chosen for other analysis in this work. stable temporal long-term (LTP/LTD) non-volatile synaptic emulation. Each skyrmion crossing over to the post-synapse region increases the conductance of the read path. Thus, maximum number of conductance levels that can be achieved is the total number of skyrmions nucleated in pre-synapse. If multiple skyrmions enter the post-synapse under the influence of a single pulse then the effective number of distinct con- ductance states is reduced. The maximum number of stable skyrmions that are created during nucleation depends on the width of nanotrack [20]. Therefore the number of conductance levels is proportional to the width of the nanotrack. Increasing the length, allows more room for sequential movement of skyrmions in response to driving currents. However a large width and length would also incur synaptic area overheads. Therefore dimension of the nanotrack was fixed at: 820 nm × 280 nm × 1 nm. It allowed nucleation of 17 skyrmions in the pre-synapse during initiation. The spin polarisation value was set to 0.6 so as to improve the control of driving current on the movement of skyrmions across the PMA barrier. The micromagnetic simulation parameters are listed in Table I. The variation of conductance levels and programming en- ergy per pulse with current density is shown in Fig. 2 (a). As the current density increases, the number of conductance states decrease. This is because with higher values of current, the events when multiple skyrmions cross the barrier increases. However if the current density is lower than a certain threshold (Jth) then it fails to move the skyrmions across the barrier. The current pulse width was kept at a constant value of 2 ns. The energy values are calculated using Equation 5: ESpike = ρ × t × l × w × J 2 × TW , (5) where ρ is the resistivity of Pt thin film [32], t and w are the thickness and width of HM layer and J and TW are the current density amplitude and width of the pulses used for programming. The variation of conductance levels and energy for different programming pulse widths is shown in Fig. 2 (b). Current density of the pulses used was 5 MA/cm2. As the pulse width was decreased, the time window allowed for multiple skyrmions to cross the barrier decreased and therefore the number of distinct conductance levels increased. It was also found that just after a pulse ended, there was some transient component in the skyrmions' velocity. The maximum inter pulse delay required for the skyrmion movement across the barrier to stabilise was found to be 5 ns. This puts a maximum limit on the operating frequency of neuromorphic systems built with this nanotrack. In all the simulations only those conductance states are reported which were non-volatile and did not involve any skyrmion crossing barrier after removal of programming pulse. The programming parameters used in this work are: current density = 5 MA/cm2 and pulse width = 2 ns and has been circled in red in Fig. 2. Using these parameters, consecutive potentiating (depressing) pulses which moved skyrmions from pre to post-synaptic (post to pre- synaptic) region were applied. The position of skyrmions in the nanotrack after different pulses are shown in Fig. 3 (a) whereas the conductance and post-synaptic skyrmion population vari- ation with pulses is shown in Fig. 3 (b). The conductance modulation curve is nearly linear and symmetrical in both LTP and LTD phases, which is a desirable property in electronic synapses [33]. IV. 1T1N SYNAPSE AND SIMPLIFIED STDP The proposed 1T1N synaptic circuit along with the pre and post-neurons are shown in Fig. 4 (a). The proposed pre/post- neuronal spikes (programming methodology) are shown in Fig. 5. In our proposed synaptic design there are four possible Fig. 3: (a) Micromagnetic simulations showing non-volatile conductance modulation of our skyrmionic synapse. First 7 pulses (5 MA/cm2, 2 ns width) move the skyrmions from pre to post-synapse region (LTP) and the next 7 vice-versa (LTD). (b) Evolution of post-synapse conductance. 4 modes of operation; (1) idle, (2) spike transmission, (3) potentiation and (4) depression. The different components of a neuron used in this work are: Current scaling circuit, integrator, comparator and a spike generator. The circuit and functioning of each of these components are discussed in detail in Section V. Spike transmission occurs when there is a pre-spike i.e. VP re is HIGH. The pre-spike voltage applied S1 across the terminals B and C result in a current proportional to the conductance of the synapse (ISyn), flowing out of C and entering the post neuron through the current scaling circuit. Consequently a current ISpike enters the integrator and keeps getting integrated in the form of voltage (Vmem) across a capacitor. When Vmem crosses a threshold, two different spikes are generated: VP - VN which is the post-neuronal spike for the synapse under consideration and VP ost S1 which is the pre-neuronal spike for the next layer of synapses. Although during spike transmission the gate of T1 receives a HIGH voltage, if there is no post-neuronal spike it will be in cutoff and no significant current will flow between A and D. In the case when only post spike occurs, the synaptic circuit remains in idle mode. This is because there is no current flow through the synapse as the transistor T1 is off. Plasticity (LTP or LTD) occurs when both the pre and post-spikes have temporal coin- cidence. When the positive part of post-spike coincides with the pre-spike as shown in Fig. 5 (a), LTP occurs (conductance of read-MTJ increases). At the onset of the pre-spike, T1 is in cutoff and spike transmission takes place from B to C. As soon as the post-spike arrives, T1 starts conducting and a current (whose magnitude depends on HM layer resistance and VP - VN ) flows from A to D, moving the skyrmions to the right. Its worth noting that spike transmission takes place between B and C even when the post-neuronal spike is driving skyrmions across the barrier in the HM layer. This is the unique advantage provided by our 4 Terminal decoupled read- program nanotrack. In case of a 3-terminal nanotrack [9], [20] separate transistors would be required for switching off spike transmission during programming mode, since both operations take place through a common node. LTD occurs when the negative part of the post-spike coincides with the pre-spike (Fig. 5 (b)). This results in current flowing from D to A, thus moving the skyrmions from post to pre-synaptic region and thus reducing the conductance of read-MTJ. For certain range of temporal spacing between pre and post-neuronal spikes, portions of both the positive and negative parts of the post- neuronal spike coincides with the pre-neuronal spike (shown in Fig. 5 (c)). In such a case both LTP and LTD would take place in degrees proportional to their extent of their overlap. Based on the micromagnetic simulations and nanotrack parameters described in the previous section, the characteristics of pre/post neuron spikes used are; tS2 = 2 ns, tS1 = 22 ns and tw = 17 ns. Therefore the temporal conditions for which LTP, LTD and both occur are: 3 (cid:54) ∆t <22, -21 <∆t (cid:54) -2 and -2 <∆t <3 respectively, where ∆t = tpost-tpre. The resultant STDP characteristic curve showing the percentage change in conductance for different values of ∆t is shown in Fig. 6. The chosen spike scheme leads to synaptic programming energy consumption of ∼ 1.2 fJ/ per spike, (Equation 5). The arrangement of our proposed 1T1N synaptic bit-cell in 5 Fig. 4: (a) Proposed 1T1N skyrmionic synapse and different components of post-neuron, (b) 1T1N synaptic bit-cells in crossbar arrangement. (a) (b) Fig. 5: Proposed pre and post-spike pulse shapes and their different orientation in time leading to (a) LTP, (b) LTD and (c) combination of LTP and LTD. crossbar arrangement is shown in Fig. 4 (b). All bit-cells in a column share the same post-neuron whereas all those in a row share the same pre-neuron. Therefore currents from all the synaptic bit-cells in a single column that receive pre-neuronal spike contribute to ISyn that enters the post-neuron below. All the bit-cells in a column receive post-neuronal spike across VP and VN , but only those are programmed whose transistor is ON due to simultaneous presence of pre-spike. Also note that due to the decoupled write and read paths in our proposed synaptic structure, conductance modulation and spike trans- mission can both occur simultaneously, thus leading to faster unsupervised learning. Whereas in the structure proposed in [20] due to a shared node between the two paths only one function (spike transmission or conductance modulation) could occur at a time. Considering that the same learning rule is being implemented, an extra transistor would be required to switch off the spike transmission path when the programming pulses are being applied in that case. V. SUBTHRESHOLD CMOS NEURON CIRCUIT In this section we present the schematics, functioning and outputs of different building blocks of the CMOS based neuron circuit. All simulations were done in CADENCE Spectre, using TSMC 65 nm technology node PDK. The various circuit parameters used for simulation has been detailed in Table II. A. Current Scaling Circuit The CMOS circuit involved in scaling and normalizing the current entering the post-neuron during spike transmission Fig. 6: Simplified STDP characteristics used in our proposed design. The percentage change in conductance is shown with respect to an initial state where 5 skyrmions are present in post-synaptic region. Fig. 7: Subthreshold current scaling and normalizing block used in our neuron circuit. The sum of current from synapses in previous layer (I1, I2 .. etc) enter the circuit block as ISyn and the resultant output current ISpike is passed to the integrator stage of the neuron. is shown in Fig. 7. The total current from synapses ISyn, in the previous layer enter the post-neuron via this current scaling circuit block as ISpike. The transistors N2-N6 operate in their subthreshold regime. This is ensured by making the bias current (IB) controlled by VB and is very small, of the order of a few hundreds of nano-amperes. In that case the currents ISpike1, Iref and IB are given by equation 6. The currents ISyn and ISpike are determined by equation 6: ISpike1 = I0e kVx−VC VT , Iref = I0e kVref −VC VT , Ib = I0e kVB VT (6) On applying Kirchoff's law at node C, one can eliminate VC to get the relation between ISpike1 and node voltage Vx, as shown in equation 7. ISpike1 = Ib kVx VT e kVx VT + e e kVref VT , (7) Voltage Vx is a function of the current ISyn and the exact relation between them depends on whether the transistor N1 operates in subthreshold or superthreshold regime. The PMOS transistors N5 and N6 are used as to make a current mirror that converts the sinking current flowing through N2 into a sourc- ing current flowing through N6 and therefore ISpike1 ≈ ISpike. As ISpike gets integrated in the neuron's integrator block, it's input impedance keeps increasing. Therefore in order to prevent the transistor N6 from going into cutoff region while trying to source the same amount of current into a larger impedance load, it's supply voltage (Vdd2) was kept at a slightly higher level (650 mV) as compared to Vdd1 (600 mV). Fig. 8: Current response of the scaling and normalizing block for different values of cumulative resistance of the synapses connecting it to neurons in previous layer. Variation of ISyn and ISpike with resistance of synapse is shown in Fig. 8. As more number of synapses (attached to different pre-neurons) are connected in parallel, the effective resistance of the path terminating in N1 decreases. Thus Fig. 8 shows how values of ISyn and ISpike are affected when the number of synapses connecting a post-neuron to the previous neuron layer increases. The maximum resistance for which a current value has been plotted is 22 kΩ, since that is the maximum resistance of a single nanotrack synapse when there are zero skyrmions in post-synaptic region. B. Integrator, Comparator and Spike Generator The CMOS circuit that constitutes the remaining of our post-neuron is shown in Fig. 9 (a). It starts with a Differential Pair Integrator filter for integrating incoming current signal (M1-M3). It forms the integrator block of our post-neuron. The voltage accumulated across the capacitance (Cmem) acts as the neuron's membrane potential. The inverters constituted by M5-M6 and M7-M8 play the role of comparator and spike event generating block. The circuit beyond it comprising of 6 the Flip-Flop, AND gates, M9-M10 and R1-R2 is responsible for generating the spikes as specified in Fig. 5, whenever a spike event is encountered. The expression governing the dynamics of a generic non- linear integrate and fire system is given by equation 8 [34]. τ du dt = F (u) + G(u)I (8) Assuming all transistors to be in subthreshold saturation and applying translinear principle, one gets the expression for Iout as shown in equation 10, where the currents Iout, It, Iτ are given by equation 9 and τ = CmemVT /kIτ . Iout = I0e kVmem VT , It = I0e kVthr VT , Iτ = I0e kVtau VT (9) τ dIout dt = ItIoutISpike Iτ (Iout + It) − Iout (10) On replacing Iout with I0e the temporal dynamics of Vmem shown in equation 11. (see equation 9), one obtains VT kVmem τ dVmem dt = ItISpike Iτ (Iout + It) − VT k (11) It is worth noting here that ISpike is the input current to the DPI integrator block and Iout is a function of Vmem. Therefore both equation 10 and 11 represent non-linear integrate and fire dynamics (see equation 8) in variables Iout and Vmem respectively. The threshold voltage of the neuron is determined by the switching voltage of the inverter (M5-M6). This can be controlled by changing the dimensions (W/L ratio) of M5 and M6. Therefore as Vmem approaches the threshold, the output of the first inverter changes drastically to 0. In order to invert this output and provide spike events such that a high voltage corresponds to Vmem reaching its threshold, a second inverter M7-M8 has been used. The second inverter also sharpens the response of the first inverter, thus resulting in positive spike events only when Vmem crosses the threshold. In order to generate spikes of fixed pulse widths and desired shapes we make use of synchronous circuits, following the inverters. Three different clock signals have been used for this purpose: CLK, POS and NEG with widths as indicated in Fig. 9 (b). The Flip-Flop (FF) is used to generate the spike (VS1) which acts as the pre-neuronal spike for the next layer of synapses. It's pulse width is same as that of CLK i.e. 22 ns. This spike is also connected to gate of M4 so as to discharge Cmem, thus reseting the accumulated membrane potential. Cref determines the time taken by Cmem to discharge. Following this AND gates are used to make the outputs: VAN D HIGH only when HIGH of POS and NEG overlap with HIGH of VS1 respectively. The outputs from the AND gates are then connected to source follower circuits, so as to be able to drive larger loads. The final outputs of the circuit VP and VN are connected to the pre and VAN D N P 7 (a) (b) Fig. 9: (a) Subthreshold CMOS circuit of neuron used for this work, (b) Timing diagram showing the global signals (CLK, POS, NEG) and output spikes of the neuron (VS1, VP -VN ) for different temporal placements of spiking event. and post-synaptic regions of our nanotrack synapse. Therefore the differential voltage VP - VN represent the post-neuronal spike, used to drive skyrmions in the synapses in the previous layer. As we saw in Section III, different current amplitudes and pulse widths may lead to different conductance levels and energy dissipation in the synapse, one can control the amplitude of VP - VN by varying the values of R1, R2 and W/L ratios of M9 and M10, whereas the temporal parameters of the spikes (tS1, tw, tS2 discussed in Section IV) can be controlled by the pulse widths and duty ratios of CLK, POS, NEG. The time evolution of global clock signals, spike events and output spikes (VS1 and VP - VN ) are shown in Fig. 9 (b). The temporal parameters of CLK, POS and NEG (shown in Fig. 9 (b)) were chosen so as to generate spikes with parameters as discussed in Section IV. S1 In order to demonstrate the working of the proposed 1T- 1N STDP powered skyrmionic synapse with neuron circuit, we considered a single synaptic bit-cell between a pre and post-neuron. The pre-neuron was modeled as a pulse source, ) with pulse width 23 ns and a frequency generating (VP RE ∼ 27 MHz. The post-neuron was simulated with the circuit discussed in this section. The HM layer was modeled by a resistance of 3 kΩ. The time evolution of VP OST , Vmem (membrane potential), programming current flowing through HM layer and resistance of read MTJ is shown in Fig. 10. It is worth noting here that the sign of the programming current shown in Fig. 10 depends on the time (∆t) with which the pre and post-neuronal spikes are separated (exact dependence has been discussed in Section IV). Accordingly current which is positive, negative or both might flow through the synapse, resulting in LTP, LTD or a combination of LTP and LTD respectively. The energy consumed in the neuron circuit (in- cluding the current scaling block, integrator, comparator and spike generation blocks) was found to be 0.25 pJ/spike for a supply voltage (Vdd) of 600 mV and neuron firing rate of ∼ 2.3 MHz. S1 VI. UNSUPERVISED LEARNING WITH SKYRMION SYNAPSE In order to validate the working of our proposed skyrmion on nanotrack synaptic bit-cell for unsupervised learning we TABLE II: Circuit parameters for CMOS Neuron Circuit Parameter Description VB Vref Vdd Vdd2 Vthr Vtau Cmem Cref W/L ratio of N2-N6, M1-M3, M8 Value 450 mV 450 mV 600 mV 650 mV 350 mV 270 mV 25 fF 5 fF 10 µm / 65 nm 200 nm / 65 nm 240 nm / 65 nm 400 nm / 65 nm 400 nm / 65 nm 16 µm / 65 nm 2.7 µm / 65 nm W/L ratio of N1 W/L ratio of M5 W/L ratio of M6 W/L ratio of M7 W/L ratio of M9-M10 W/L ratio of T1 Fig. 10: Circuit simulation result showing pre-neuronal spikes, output spike and membrane potential of post-neuron, programming current flowing through synapse and its resistance when a single 1T1N synaptic bit-cell is connected between a pre-neuron and post-neuron. simulated two applications. In the first, we simulated a fully connected feed forward two-layer Spiking Neural Network (SNN) (see Fig. 11) powered by Spike-Timing Dependent Plasticity (STDP). All simulations were done on the MATLAB based neuromorphic simulator named MASTISK [26]. The network has 90,000 spiking pixels in the first layer and 2 LIF neurons in the output layer. The two layers are connected by excitatory synapses in an all-to-all fashion. The output neurons are connected to each other through inhibitory synapses. This is done to implement Winner-Take-All mechanism [35]. Video stream comprising of binary 300 × 300 frames were used for training the SNN as shown in Fig. 11 (b)-(d). The video stream comprises of mostly gaussian noise frames (see Fig. 11 (b)) with two complex patterns (IIT-D logo and BUAA logo) embedded at different timestamps (Fig. 11 (c)-(d)). The input layer encodes the frames into spikes using poisson spike encoding [36] with the mean firing rate proportional to the intensities of the pixels. Fig. 12 (a) shows the rastor plot of input neurons during the entire training period. Spiking activity of the neurons are denoted by dots in Fig. 12 (a) and the color denotes the kind of frame that was presented. Black dots represent noisy frame whereas the red and blue dots represent the frames containing the IIT-D logo and BUAA logo respectively. The input video frames at specific timestamps are illustrated in Fig. 12 (b). Fig. 12 (c) and (d) show the evolution of conductance of the synapses connecting the output neurons 1 and 2 to the input layer respectively, thus depicting the representations learned by each of the output neurons. Neuron 1 became selective to BUAA logo, while neuron 2 got selective to IIT-D logo. Initially the output neurons fire randomly, however from 1000 ns onwards as the occurrence of patterns increases the spiking becomes more specific to occurrence of a particular input pattern (Fig. 12 (e)). In order to study the degree of selectiveness of the neurons to different patterns, we separately noted the conductance of the synapses connecting the output neurons to different types of input pixels. The input pixels could either be pattern pixels and carry information for the two different patterns or be background pixel that do not carry information regarding any pattern. The averaged conductance of the synapses between the input pixels of the three types and two output neurons are shown in Fig. 13. The logo with maximum averaged conductance is the one for which a particular neuron gets selective. The difference between the conductances of the two patterns for a particular neuron depicts how well it can differentiate between the two patterns. The low conductance of the background synapses (noise) shows that the network is able to get selective to patterns and not background noise. The system achieves a low false positive spike rate of 6.5×10−4 (inset of Fig. 13). Since output neuron firing activity starts around 350 ns there is a transient in the false positive spike rate of either neuron. Ultra-low on-line unsupervised learning synaptic programming power consumption of ∼ 1 nW / synapse and neuron firing power consumption of ∼ 1.64 µW / neuron was achieved (Total programming events: ∼ 4.6×105; Total post-neuron firing events: 40; synaptic programming energy: 1.2 fJ; CMOS neuron energy per firing event: 0.25 pJ; duration: 3050 ns; total synapses: 1.8×105). The power takes in account both: energy 8 Fig. 11: (a) SNN topology simulated for this work (90 K neurons, 180 K synapses).(b-d) Frames of video dataset used for unsupervized learning application. spent in moving skyrmions in the nanotrack, and integration of ISpike in DPI integrator, comparator and the spike generation circuit over the entire duration of learning. TABLE III: MNIST Classification Accuracy for different synapses Synapse Type Redundancy = 2 Redundancy = 4 Redundancy = 6 Ideal Synapse Accuracy 73.8 % 82.17 % 84.97 % 85.5 % For the second application, we simulated a 3-layer SNN comprising of input, output (excitatory) and inhibitory neurons respectively inspired from [37]. The network was trained on 60,000 training images of the MNIST database. In the infer- ence mode, the skyrmion on nanotrack characterized by its properties depicted in Fig. 3, was used as synapse. We varied the number of nanotracks connected in parallel to constitute a single synapse in order to see how performance varied with the redundancy. The different levels of redundancy and their corresponding classification accuracies have been shown in Table III. The synapse with redundancy = 6 almost reaches the performance level of ideal synapse (infinite dynamic range and conductance levels). VII. DISCUSSION Table IV compares our proposed skyrmion synapse with other nanodevice based synapses. It clearly highlights the ultra-low energy (1.2 fJ/event) and sub-nanosecond time (2 ns) consumed in changing conductance states in our synapse. Since synapses based on nanotrack type structure (domain wall or skyrmion based) usually have 3 or more terminals, it becomes difficult to use nanotrack based synapses in 1R configuration (synaptic bit-cell containing only nanotrack and no transistor). For instance domain wall on nanotrack based synapse proposed in [9] had 3 transistors apart from the nanotrack in their synaptic bit-cell. However we show that using our proposed skyrmion on nanotrack configuration and neuron circuit one can implement a modified version of STDP learning rule with only 1 transistor along with the nanotrack in a bit-cell. A limitation of our synapse is the large dimensions of the nanotrack (1.5 % larger than [9]). The length of the nanotracks determines the degree with which the skyrmions can freely move in the nanotrack without interacting with each other. It also has an impact on number of distinct conductance TABLE IV: Comparison with other synapses Terminals Type 9 Programming Neuron Spikes Identical Experimental Experimental Non-Identical Experimental Identical Simulation Simulation Complex Pres-Spikes = exponential Post-Spikes = identical pulses Identical Device Dimension Ag-Si memristor [38] PCM [39] AlOx/HfO2 Bilayer RRAM [40] Domain Wall synapse [9] 1T1N Skyrmion Synapse [This Work] 100 nm X 100 length: 500 nm, BE diameter: 75 nm nm 21 nm thick 320 nm X 20 nm 820 nm X 280 nm Programming Energy 25.2 pJ-403.2 pJ LTD (avg) = 13.5 pJ LTP (avg) = 50 pJ LTP (avg) = 3.24 nJ LTD (avg) = 4 nJ 48 fJ/event Programming Time 300 us Synapse Configuration 1R LTD transition: 75 ns LTP transition: 5 us 100 us 1 ns 1R 1T1R 3T1R 1.2 fJ/event 2 ns 1T1R 2 2 3 5 4 with diameter ∼ 15 nm. Recently studies have shown that size of skyrmions can even be reduced to 1-3 nm [30], [41]. This opens possibilities of reducing the nanotrack length further without losing number of conductance levels. This work is based on simulations done holistically at level with parameters the device, circuit and architectural calibrated to experimental results [30]. It clearly highlights the benefits of neuromorphic systems built with hybrid CMOS- skyrmion circuits. VIII. CONCLUSION We illustrate an approach for practical realization of multi- level synapse using hybrid skyrmion-CMOS based spiking neuromorphic systems based on simulations done at device, circuit and system level. Firstly through micromagnetic simu- lations we study in detail the impact of different programming parameters of a HM/FM nanotrack on various synaptic per- formance parameters and demonstrate true non-volatile multi- level conductance states, independent of inter-spike delay or frequency. We use a read-MTJ on top of the post-synaptic region of the nanotrack separated by insulating magnetic material from the FM layer beneath it. This makes our synapse 4-terminal with completely decoupled read and program paths. Leveraging the conductance modulation, we propose a 1T1N synaptic architecture and programming methodology to im- plement a modified version of the biological STDP rule, while consuming ∼ 1.2 fJ energy per programing event. We design a custom subthreshold synchronous spike generator circuit which when coupled with a current scaling circuit, Differential Pair Integrator and inverter based thresholding circuit, can perform the desired functionalities of a Leaky- Integrate and Fire neuron at extremely low energy (0.25 pJ/output spike). Unsupervised learning is demonstrated by simulating feed-forward SNN for pattern extraction and multi- class classification application. Fig. 12: (a) Input Rastor plot showing spiking activity of layer-1 neurons. 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1804.06570	1	1804	2018-04-18T06:31:31	Optically Levitated Nanodumbbell Torsion Balance and GHz Nanomechanical Rotor	[ "physics.app-ph", "physics.optics", "quant-ph" ]	Levitated optomechanics has great potentials in precision measurements, thermodynamics, macroscopic quantum mechanics and quantum sensing. Here we synthesize and optically levitate silica nanodumbbells in high vacuum. With a linearly polarized laser, we observe the torsional vibration of an optically levitated nanodumbbell in vacuum. The linearly-polarized optical tweezer provides a restoring torque to confine the orientation of the nanodumbbell, in analog to the torsion wire which provides restoring torque for suspended lead spheres in the Cavendish torsion balance. Our calculation shows its torque detection sensitivity can exceed that of the current state-of-the-art torsion balance by several orders. The levitated nanodumbbell torsion balance provides rare opportunities to observe the Casimir torque and probe the quantum nature of gravity as proposed recently. With a circularly-polarized laser, we drive a 170-nm-diameter nanodumbbell to rotate beyond 1~GHz, which is the fastest nanomechanical rotor realized to date. Our calculations show that smaller silica nanodumbbells can sustain rotation frequency beyond 10 GHz. Such ultrafast rotation may be used to study material properties and probe vacuum friction.	physics.app-ph	physics	Optically Levitated Nanodumbbell Torsion Balance and GHz Nanomechanical Rotor Jonghoon Ahn,1 Zhujing Xu,2 Jaehoon Bang,1 Yu-Hao Deng,3 Thai M. Hoang,2, ∗ Qinkai Han,4, † Ren-Min Ma,3, 5, ‡ and Tongcang Li1, 2, 6, 7, § 1School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA 2Department of Physics and Astronomy, Purdue University, West Lafayette, IN 47907, USA 3State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, China 4The State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China 5Collaborative Innovation Center of Quantum Matter, Beijing 100871, China 6Purdue Quantum Center, Purdue University, West Lafayette, IN 47907, USA 7Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA (Dated: April 23, 2018) Levitated optomechanics has great potentials in precision measurements, thermodynamics, macro- scopic quantum mechanics and quantum sensing. Here we synthesize and optically levitate silica nanodumbbells in high vacuum. With a linearly polarized laser, we observe the torsional vibration of an optically levitated nanodumbbell in vacuum. The linearly-polarized optical tweezer provides a restoring torque to confine the orientation of the nanodumbbell, in analog to the torsion wire which provides restoring torque for suspended lead spheres in the Cavendish torsion balance. Our calcu- lation shows its torque detection sensitivity can exceed that of the current state-of-the-art torsion balance by several orders. The levitated nanodumbbell torsion balance provides rare opportunities to observe the Casimir torque and probe the quantum nature of gravity as proposed recently. With a circularly-polarized laser, we drive a 170-nm-diameter nanodumbbell to rotate beyond 1 GHz, which is the fastest nanomechanical rotor realized to date. Our calculations show that smaller silica nanodumbbells can sustain rotation frequency beyond 10 GHz. Such ultrafast rotation may be used to study material properties and probe vacuum friction. Levitated optomechanical systems provide a powerful platform for precision measurements with great isolation from the thermal environment [1–6]. Optically levitated nano- and microspheres have been used to demonstrate force sensing at the level of 10−21 N [7] and to search for interactions associated with dark energy [8]. Opti- cally trapped nanoparticles can also be driven to rotate at high speed. Previously, a rotation frequency of about 10 MHz has been achieved [9–11]. It is desirable to in- crease the rotation frequency further for studying ma- terial properties under extreme conditions [12, 13] and probing vacuum friction [14, 15]. Recently, a novel ultrasensitive torsion balance with an optically levitated nonspherical nanoparticle was pro- posed [16], utilizing the coupling between the spin an- gular momentum of photons and the mechanical mo- tion of the nanoparticle [16–19]. Torsion balances have enabled many breakthroughs in the history of modern physics [20–23]. For example, the Cavendish torsion bal- ance (Fig. 1(a)) determined the gravitational constant and the density of the Earth [20]. An optically levitated nanoscale torsion balance can provide a rare opportu- nity to detect the Casimir torque [24–27], and test the quantum nature of gravity [28–30]. An essential step to- wards these goals is to optically trap a well-defined non- spherical nanoparticle in high vacuum. However, opti- cally trapped nonspherical nanoparticles such as nanodi- amonds and silicon nanorods in former experiments were lost at about 1 torr due to laser heating [10, 16, 31–33]. Additionally, several years ago, levitated nanodumbbells were theoretically proposed to study many-body phase transitions [18]. To our best knowledge, however, there was no report on optical levitation of a nanodumbbell in vacuum prior to this work. In this letter, we synthesize silica nanodumbbells with two different methods and optically trap them in high vacuum. With a linearly polarized laser (Fig. 1(b)), we observe the torsional vibration of a levitated nan- odumbbell in high vacuum, which is an important step towards probing the Casimir torque [24–27] and the quantum nature of gravity [28–30]. With a circularly polarized laser, we drive the nanodumbbell to rotate be- yond 1 GHz, which is the highest mechanical rotation frequency reported to date. In a linearly polarized optical tweezer, the long axis of a nanodumbbell will tend to align with the polariza- tion direction of the trapping laser (Fig. 1(b)). This is because the polarizability of the nanodumbbell along its long axis is larger than the polarizability perpendicular to its long axis. If the nanodumbbell is not aligned with the polarization direction of the optical tweezer, it will twist the polarization of the optical tweezer (Fig. 1(b)), as an analog of twisting the torsion wire by the lead spheres in the original Cavendish torsion balance (Fig. 1(a)). If the optical tweezer is circularly polarized, the nanodumbbell will be driven to rotate at high speed. The torsional vi- bration or rotation of the nanodumbbell can be detected by monitoring the change of the polarization of the trap- ping laser (Fig. 1(c)). We have synthesized pure silica nanodumbbells us- 2 FIG. 1. (a) A simplified diagram of the original Cavendish torsion balance that has two lead spheres suspended by a cop- per silvered torsion wire. (b) A nanodumbbell levitated by a linearly polarized optical tweezer in vacuum. The linearly polarized optical tweezer provides the restoring torque that confines the orientation of the nanodumbbell. xT , yT , zT are Cartesian coordinates of the trapping laser. xT is parallel to the electric field E of the incoming linearly polarized laser, and zT is parallel to the wave vector k of the laser. xN is par- allel to the long axis of the nanodumbbell. The angle between xT and xN is θ. (c) A simplified diagram for detecting the center-of-mass (COM) motion, the torsional (TOR) vibration, and the rotation (ROT) of a levitated nanodumbbell. The nanodumbbell is trapped at the focus of the lenses. The laser beam is initially linearly polarized. A quarter-wave (λ/4) plate is used to control its polarization. BS: non-polarizing beam splitter; PBS: polarizing beam splitter; λ/2: half-wave plate. Inset: A nanodumbbell with diameter D and length L created by attaching two identical nanospheres. ing chemical and physical methods. To synthesize nan- odumbbells with diameter D and length L (inset of Fig. 1(c)), we first synthesize silica cores with a diameter of d = L−D. For example, we add 1 mL tetraethyl orthosil- icate (TEOS) to a mixture of ammonia (4.86 mL), pure water (2.98 mL) and ethanol (100 mL) under stirring for 48 h to synthesize d = 80 nm nanospheres. Then 10 mL acetone is added into the solution and stirred for 24 h to induce aggregation. Next, a small amount of TEOS is added under stirring for another 24 h to grow the sil- ica shells [34]. The precipitate of silica dumbbells was purified by washing with ethanol in an autoclave at 90 ◦C and centrifugation. This chemical method can syn- thesize a large quantity of silica nanodumbbells [34], but is demanding. So we also develop a physical method to assemble nanodumbbells. In this method, we first pre- pare a colloidal suspension of silica nanospheres in water. We then generate water microdroplets in air with an ul- trasonic nebulizer [32]. By controlling the concentration FIG. 2. (a), (b): SEM images of silica nanodumbbells with two different sizes. The scale bar is 200 nm in (a), and 100 nm in (b). (c) Measured power spectrum densities (PSD) of the torsional vibration (labeled by 'Tor') and the translational vi- brations (labeled by 'X', 'Y', 'Z') of a 170 nm-diameter nan- odumbbell optically levitated at 5 × 10−4 torr. (d) Measured PSD of the translational vibrations of the nanodumbbell lev- itated at 10 torr. The black curves are Lorentz fits. of silica nanospheres, a fraction of water microdroplets (∼ 5µm in diameter) contain 2 silica nanospheres in them. Two nanospheres in the same microdroplet will form a nanodumbbell as the water evaporates. Fig. 2(a), 2(b) show SEM images of our nanodumbbells with two different sizes. Their aspect ratio (L/D) is between 1.9 and 2. To optically levitate a silica nanodumbbell in vacuum, a 500 mW, 1550 nm laser is tightly focused with an NA = 0.85 objective lens in a vacuum chamber. The laser is initially linearly-polarized , and its polarization can be controlled with a quarter wave plate (Fig. 1(c)). Sil- ica nanodumbbells are delivered into the optical trap at atmospheric pressure with an ultrasonic nebulizer [32]. Once a nanoparticle is trapped, we evacuate the vacuum chamber to below 0.01 torr, and then increase the pres- sure back to desired levels for measurements. This pro- cedure removes extra nanoparticles in the chamber. To monitor the trapping process, a 532 nm laser is applied on the nanoparticle and the scattered light is viewed us- ing a camera. We verify the trapped nanoparticle is a nanodumbbell by checking the ratios of damping coeffi- cients for translational motions along different directions. The motion of the levitated nanoparticle changes the di- rection and polarization of the laser beam, which allows us to monitor the motion of a nanodumbbell with the same 1550 nm trapping laser (Fig. 1(c)) [16]. Fig. 2(c) shows the power spectrum density (PSD) of both tor- sional (TOR) vibration and center-of-mass (COM) vibra- 1550 nm (c) (a) Torsion wire Cavendish torsion balance 𝜃 (b) 𝑦𝑇 𝑥𝑇 𝑧𝑇 Lenses BS PBS COM detector TOR detector ROT detector 𝜆/2 𝜆/4 PBS BS 𝐿 𝐷 𝑥𝑁 (a) (b) 200 nm 100 nm (c) (d) Z X Y X Z Tor Y 3 tain the drag torque Tz on a nanodumbbell rotating at speed Ω. We then calculate the ratio Tz/Tsphere, where Tsphere = πµD4Ω/(11.976λM ) is the drag torque on a single sphere with diameter D rotating at the same speed Ω [37]. Here µ is the viscosity of air, and λM is the mean free path of air molecules which is inversely proportional to air pressure pair. The calculated results are shown in Fig. 3(b). The damping rate of the rotation or torsional vibration around the z axis is Γθ = Tz/(IzΩ), where Iz is its moment of inertia. When the size of a silica nanodumbbell is much smaller than the wavelength of the trapping laser, the dipole approximation can be applied. The complex ampli- tude of the induced dipole of the nanodumbbell is p = αxEx xN + αyEy yN + αzEz zN , where the complex am- plitude of the electric field of the laser beam E is decom- posed into components along the principle axes of the nanodumbbell. xN is in the direction along the long axis of the nanodumbbell. The components of the optical force Fj and the optical torque Mj acting on the nan- 2 Re{p∗ · ∂jE} odumbbell can be expressed as [38]: Fj = 1 2 Re{p∗ × E}j. The quasi-static polarizability and Mj = 1 α0 j (j = x, y, z) of a nanodumbbell can be calculated as- suming the electric field is static [39]. Fig. 3(c) shows the effective susceptibilities χx = α0 y/(0V ) of the nanodumbbell as a function of the aspect ratio. Here 0 is the permittivity of vacuum, and V is the vol- ume of the nanodumbbell. (χx − χy)/χy = 0.14 when L/D = 1.9. The dipole approximation can be improved by including the effects of radiation reaction due to the oscillation of the electric field in a laser beam. Then the polarizability is [38, 40, 41]: αj = α0 j /(6π0)], where k0 is the wave number. The real part of the polar- izability Re[αj] ≈ α0 j is responsible for optical confine- ment and alignment, while the imaginary part Im[αj] is important for optically rotating a nanodumbbell. x/(0V ), χy = α0 j /[1− ik3 0α0 With calculated damping rates and polarizabilities, we can calculate the torque detection sensitivity of a levitated nanodumbbell. The minimum torque that it can measure limited by thermal noise is [42]: Mth = (cid:112)4kBTenvIzΓθ/∆t, where Tenv is the environmental 0V (cid:112)Jp/(3π∆t). Here, Jp = Ilaser/(ωL) is the temperature. In ultrahigh vacuum, the thermal noise from the residual air molecules becomes negligible and the minimum torque it can detect will be limited by the shot noise of the laser beam [24]: Mrad = (χx − χy)k2 photon flux. Ilaser is the laser intensity, and ωL is the angular frequency of the laser. As shown in Fig. 3(d), a nanodumbbell with D = 170 nm and D = 50 nm trapped √ in a 500 mW laser will have a torque detection sensi- tivity about 10−27Nm/ Hz, respec- tively. Remarkably, a levitated nanodumbbell at 10−4 torr is already much more sensitive than the state-of-the- √ art nanofabricated torsion balance, which has achieved a torque sensitivity of 10−22Nm/ √ Hz at room tempera- ture, and 10−24Nm/ Hz at 25 mK in a dilution refrig- √ Hz and 10−29Nm/ FIG. 3. (a) The ratio of air damping coefficients for trans- lational motions perpendicular or parallel to its long axis (xN -axis) as a function of the aspect ratio (L/D) of a nan- odumbbell. (b) Calculated normalized drag torque of the ro- tation of a levitated nanodumbbell around zN axis as a func- tion of the aspect ratio. (c) Effective susceptibilities of a silica nanodumbbell parallel (χx) or perpendicular (χy) to its long axis. (d) Calculated torque detection sensitivity of a levitated nanodumbbell with D = 170 nm or D = 50 nm as a function of air pressure. We assume L/D = 1.9 in the calculations. The optical tweezer is assumed to be a focused 500 mW, 1550 nm laser with a waist of 820 nm. tion of a levitated 170-nm-diameter nanodumbbell in vac- uum at 5× 10−4 torr. This is an important step towards quantum ground state cooling of the torsional vibration and testing recent theoretical proposals [24, 28–30]. A levitated nanodumbbell will have anisotropic damp- ing rates for translational motions in air if its orienta- tion is fixed. We use the direct simulation Monte Carlo (DSMC) method to obtain the damping force and damp- ing torque of a nanodumbbell in the free molecular flow regime [35–37]. In the simulation, molecules with uni- form spatial distribution are launched from a spheri- cal surface enclosing the nanodumbbell. The speeds of these molecules satisfy a shifted Maxwell distribution to include the effect of the motion of the nanodumbbell [37]. Fig. 3(a) shows the calculated ratio of damping rates of a nanodumbbell moving along (Γx) and perpen- dicular (Γy) to its axial direction. The calculated ra- tio is Γy/Γx = Γz/Γx = 1.276 when L/D = 1.9, and Γy/Γx = Γz/Γx = 1.258 when L/D = 2. The measured ratios for the data of a 170 nm nanodumbbell shown in Fig. 2(d) are Γy/Γx = 1.25 ± 0.01 and Γz/Γx = 1.27 ± 0.02, which agree excellently with our theoretical predictions. The DSMC method is also utilized to ob- (c) (d) 𝑧𝑁 (a) (b) 𝑥𝑁 𝑦𝑁 4 FIG. 4. (a) A nanodumbbell levitated by a circularly polarized laser will rotate. (b) Measured PSD of the rotation signal of a nanodumbbell. It has a sharp peak near 2.2 GHz. (c) Measured rotation frequency of the nanodumbbell as a function of pressure. (d) Calculated stress distribution of a nanodumbbell (D = 170 nm, L/D = 1.9) rotating at 1.2 GHz. (e) Calculated ultimate rotation frequency as a function of the diameter of the nanodumbbell when L/D = 1.9. (f) Calculated ultimate rotation frequency as a function of the aspect ratio of the nanodumbbell when D = 100 nm. The ultimate tensile strength is assumed be 20 GPa (red solid line) or 10 GPa (blue dashed line). erator [43]. While a nanodumbbell levitated by a linearly-polarized optical tweezer can be an ultrasensitive nanoscale torsion balance, it will become an ultrafast nanomechanical rotor in a circularly-polarized optical tweezer (Fig. 4(a)). The frequency of the detected signal will be twice the rotation frequency of the nanodumbbell due to the symmetry of its shape. Fig. 4(b) shows a PSD of the rotation of a 170 nm-diameter nanodumbbell at 7.9 × 10−5 torr. The de- tected signal has a sharp peak near 2.2 GHz. This shows the nanodumbbell rotates at 1.1 GHz, which is much faster than that from former experiments [9–11]. Re- markably, the rotation is also very stable. The measured linewidth of the signal is less than 20 kHz, limited by the resolution of our spectrum analyzer, which leads to a ro- tating quality factor of larger than 105. The steady-state rotation speed is determined by the balance between the optical torque Mz exerted on the nanodumbbell and the drag torque Tz from air molecules. Since drag torque is proportional to the air pressure, the steady state rotation speed Ωrot is inversely proportional to the air pressure pair. Fig. 4(c) shows the rotation speed as a function of the air pressure. The experimental data agrees with A/pair, where A is a fitting parameter. As the air pres- sure decreases, the rotation speed increases. The maxi- mum rotation frequency that we can measure is limited by the bandwidth of our photodetector. ultimate tensile strength (UTS) of the material. Thus this experiment provides an opportunity to study mate- rial properties under extreme conditions. The stress dis- tribution of a nanodumbbell rotating at high speed can be calculated by the finite element method. Figure 4(d) shows the stress distribution of a D = 170 nm, L/D = 1.9 silica nanodumbbell rotating at 1.2 GHz. We assume the contacting point has a curvature radius of 5 nm. Re- markably, the maximum stress of the nanodumbbell un- der these conditions is about 13 GPa, which is 2 orders larger than the UTS of a bulk glass. This shows that our silica nanodumbbells is as strong as state-of-the-art silica nanowires [44]. The finite element method can be used to calculate the ultimate rotating frequency of sil- ica nanodumbbells with different diameters and aspect ratios. The range of ultimate rotating frequency is cal- culated by setting the UTS to be in the range of 10-20 GPa, which agrees with our observation and the results for silica nanowires[44]. Figure 4(e) shows the calculated ultimate frequency is in the range of 1.1 − 1.6 GHz for D = 170 nm, L/D = 1.9 nanodumbbells. The ultimate frequency increases as the size of the nanodumbbell de- creases. Figure 4(f) shows that for a given diameter D = 100 nm, the ultimate rotation frequency increases when the aspect ratio decreases. Thus nanodumbbells with smaller diameters and smaller aspect ratios can sus- tain rotation frequencies beyond 10 GHz. As the rotation speed increases, eventually the nan- odumbbell will fall apart due to the centrifugal force. The ultimate rotating frequency is determined by the In conclusion, we have synthesized and optically trapped nanodumbbells at pressures below 10−4 torr without feedback cooling. With a circularly polarized Rotation (a) (b) (c) (d) (e) (f) 0.1 13.2 GPa 6.7 laser, 170 nm-diameter nanodumbbells were driven to ro- tate beyond 1 GHz, which is the highest reported rotation frequency for a nanoparticle. Such high speed rotation may be used to study material properties and vacuum friction [12–15]. The torsional vibration of the levitated nanodumbbells in high vacuum is observed when the laser is linearly polarized, an important step towards detect- ing the Casimir torque [24] and developing a quantum Cavendish torsion balance for studying the quantum na- ture of gravity [28–30]. Multiple nanodumbbells can be levitated together to study nonequilibrium phases and self-assembly [18]. Note added. 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1903.10539	1	1903	2019-03-25T18:20:08	Effect of the Thickness on the Fracturing Behavior of Discontinuous Fiber Composite Structures	[ "physics.app-ph" ]	In this study, we investigate experimentally and numerically the mode I intra-laminar fracture and size effect of Discontinuous Fiber Composites (DFCs) as a function of the structure thicknesses. By testing geometrically-scaled Single Edge Notch Tension (SENT) specimens a notable structure size effect on the nominal strength of DFCs is identified. As the specimen size increases, the nominal strength decreases. For small specimens, we find a limited size effect with enhanced pseudo-ductility and a strong divergence from Linear Elastic Fracture Mechanics (LEFM). For sufficiently large specimen sizes, the scaling of the nominal strength follows closely LEFM with a strong brittle failure. As the thickness increases, the size effect decreases. We identify the fracture energy and the effective size of the fracture process zone as a function of the thickness of the structure. To do so, we integrate equivalent fracture mechanics and stochastic finite element modeling. Experimentally, we collect the nominal strength of geometrically-scaled Single Edge Notch Tension (SENT) specimens. The numerical stochastic model captures the complex, inhomogeneous mesostructure of DFCs by explicitly generating the platelets. From the integrated analysis, it is found that the fracture energy depends significantly on the structure thickness. It is shown to increase gradually up to 2 mm and saturates after 3 mm to a value of 57.77 N/mm, which is 4.81 times larger than a typical aluminum alloy.	physics.app-ph	physics	A&A Program in Structures William E. Boeing Department of Aeronautics and Astronautics University of Washington Seattle, Washington 98195, USA Effect of the Thickness on the Fracturing Behavior of Discontinuous Fiber Composite Structures Seunghyun Ko, James Davey, Sam Douglass, Jinkyu Yang, Mark E. Tuttle, Marco Salviato INTERNAL REPORT No. 19-03/02E Submitted to Composite Part A: Manufacturing March 2019 Effect of the Thickness on the Fracturing Behavior of Discontinuous Fiber Composite Structures Seunghyun Koa, James Daveya, Sam Douglassa, Jinkyu Yanga, Mark E. Tuttleb, Marco Salviatoa,∗ aWilliam E. Boeing Department of Aeronautics and Astronautics, University of Washington, Seattle, bDepartment of Mechanical Engineering, University of Washington, Seattle, WA 98195, USA WA 98195, USA Abstract In this study, we investigate experimentally and numerically the mode I intra-laminar fracture and size effect of Discontinuous Fiber Composites (DFCs) as a function of the structure thicknesses. By testing geometrically-scaled Single Edge Notch Tension (SENT) specimens a notable structure size effect on the nominal strength of DFCs is identified. As the specimen size increases, the nominal strength decreases. For small specimens, we find a limited size effect with enhanced pseudo-ductility and a strong divergence from Linear Elastic Fracture Mechanics (LEFM). For sufficiently large specimen sizes, the scaling of the nominal strength follows closely LEFM with a strong brittle failure. As the thickness increases, the size effect decreases. We identify the fracture energy and the effective size of the fracture process zone as a function of the thickness of the structure. To do so, we integrate equivalent fracture mechanics and stochastic finite element modeling. Experimentally, we collect the nom- inal strength of geometrically-scaled Single Edge Notch Tension (SENT) specimens. The numerical stochastic model captures the complex, inhomogeneous mesostructure of DFCs by explicitly generating the platelets. From the integrated analysis, it is found that the fracture energy depends significantly on the structure thickness. It is shown to increase gradually up to 2 mm and saturates after 3 mm to a value of 57.77 N/mm, which is 4.81 times larger than a typical aluminum alloy. Keywords: Discontinuous Fiber Composites, Fracture, Non-Linear Behavior, Damage Mechanics, Size Effect ∗Corresponding Author, Email address: [email protected] (Marco Salviato ) Preprint submitted to Composite Part A: Manufacturing March 27, 2019 1. Introduction Discontinuous Fiber Composites (DFCs) made of chopped fiber platelets offer unique advantages over traditional unidirectional composites. The possibility of manufacturing DFC components by compression molding thanks to the outstanding formability, makes DFCs a highly viable option even for very complex geometries [1 -- 3]. These characteris- tics have attracted significant interest from the scientific and industrial communities for the use of DFCs in applications that have been typical of light alloys, such as secondary structural components for aerospace [1, 3, 4], body frames of terrestrial vehicles [2, 4 -- 6], composite brackets, suspension arms and interiors [2] and crash absorbers [2, 4, 6]. Another interesting feature of DFCs is their mechanical behavior compared to more traditional composites. Recent studies have shown that DFCs tend to exhibit a more pseudo-ductile behavior [7 -- 12] and a significantly lower notch sensitivity [13 -- 15] com- pared to laminated composites. At the same time, the fracture energy dissipated by DFCs has been shown to be noticeably larger than aluminum alloys and typical quasi- isotropic laminates, the main competing materials in the aerospace industry [13]. The foregoing interesting mechanical properties, however, have been shown to be significantly dependent on the material mesostructure and the structure size and ge- ometry. In [8], Feraboli et al. conducted an extensive experimental campaign which showed that, for the range of plate thickness and platelet sizes investigated, the tensile and compressive strength increase with the platelet length whereas the effective elastic moduli seem to be almost unaffected. Combining experiments and two-dimensional Finite Element modeling, Selezneva et al. [12, 16] found that the measured strengths and their Coefficient of Variation (CoV) are strongly related to the platelet size and the thickness of the plates. The longer platelets provide higher strength with increased CoV whereas the thicker plates increase the average strength and feature a lower variability. Similar tests were conducted by Wan and Takahashi [10] who investigated the effects of the molding pressure. They concluded that a higher molding pressure increases the strength in both tension and compression whereas no significant differences were 2 found on the effective elastic moduli. Nilakantan and Nutt [17] further extended the study on the effects of the processing conditions on the mechanical properties of DFCs. They investigated different manufacturing methods such as open, closed mold, and vacuum-bag-only. They found that the manufacturing conditions affect the mechani- cal performance of DFCs in a substantially different manner compared to continuous fiber composites. For instance, they found that DFCs show little correlation between the void contents and the tensile strength. Leveraging a three-dimensional mesoscale model and experimental tests, Kravchenko et al. [18, 19] investigated notch-free DFC structures with aligned and staggered platelets. Using controlled platelets orientations, they found that DFCs with longer and thinner platelets have higher strengths. They also showed that the mechanisms of failure transition from delamination-dominated fracture to the fracture by platelet failure as its length increases. This phenomenon, similar to the one reported in other staggered materials systems such as nacre [20, 21], causes the strength to increase almost linearly with the platelet size until reaching an asymptotic value. This asymptotic value depends on the strength of the platelet and its morphology and the mechanical properties of the polymer matrix. Ko et al. [13] showed that not only the platelet morphology but also the structure size and geometry affect the fracturing behavior. Through a size effect test campaign on geometrically-scaled Single Edge Notch Tension (SENT) specimens made with platelets of different sizes, they were able to show that the fracturing behavior changes from pseudo-ductile to brittle with increasing specimen sizes. They also proposed a frame- work combining equivalent fracture mechanics and stochastic finite elements to estimate the fracture energy of the material. They found that this energy increases almost lin- early with increasing platelet sizes. An aspect that was not investigated, however, was the effect of the thickness of the structure on the overall fracturing behavior and its scaling. In order to shed more light on this critical aspect, this study presents an investiga- tion of the intra-laminar fracture and the size effect in DFCs for four distinct structure thicknesses. The size effect on the structural strength of geometrically-scaled SENT 3 specimens is characterized for each thickness. To capture the size effect and character- ize the fracture energy, Gf , and the effective length of the fracture process zone, cf , for each thickness, the approach combining equivalent fracture mechanics and stochastic finite element modeling proposed by Ko et al. [13] is used in this study. The model ac- counts for the complex random mesostructure of the material by modeling the platelets explicitly. Thanks to this theoretical framework, the mode I fracture energy of DFCs is estimated and it is shown to depend linearly on the thickness until it reaches an asymptotic value of about 58 N/mm. For all the thicknesses investigated in this work, the fracture energy was much larger than aluminum alloy and quasi-isotropic laminate composites made from the same constituents. This aspect is significantly interesting considering the possible use of DFCs in applications demanding crashworthiness (see e.g. [22]). 2. Material preparation and test description 2.1. Material preparation In previous studies [13, 23 -- 26], size effect testing of geometrically-scaled SENT specimens led to an accurate measure of mode I intra-laminar fracture properties of unidirectional laminates, textiles, and DFCs. Therefore, in this study, we followed the experimental procedures proposed by Ko et al. [13]. As a first step, we manufactured the specimens using a Toray T700G-12K prepreg system and leveraging the in-house manufacturing process reported in [15]. We control the weight of the plate to manufac- ture consistent plate thickness. To investigate the effect of the thickness, four different plate thicknesses were in- vestigated: 4.1, 3.3, 2.2, and 1.1 mm. These values are chosen considering typical applications of DFCs. For each thickness, four different geometrically-scaled specimen sizes were investigated with all the dimensions being scaled (Fig. 1), while keeping the platelet size constant (50 × 8 mm). As summarized in Table 1, the ratio between the largest (size-1) and the smallest (size-4) specimen was 12.3 to 1, a ratio considered to 4 be sufficiently large to enable a thorough investigation of the size effect on the nominal strength. To create a notch, a diamond-coated razor saw of width 0.2 mm was used. We choose to saw the specimens because it prevents the development of the Fracture Process Zone (FPZ) before the tests [24]. For all the tests, the size of the initial notch a0 was geometrically-scaled and equal to D/5. After manufacturing the notch, a layer of white paint followed by the black speckles was sprayed to perform the Digital Image Correlation (DIC) measurements. 2.2. Testing We tested the specimens using a servo-hydraulic, closed-loop Instron 5585H with 200 kN capacity. To prevent strain rate effects, a 0.2 %/min nominal strain rate calculated as N om = δ/L where δ = displacement from the Instron machine and L = gauge length was used for all the specimens. The load was recorded with a sampling frequency of 10 Hz. In addition, we captured the digital images with a sample rate of 1 Hz using a Nikon D5600 DSLR camera with two lenses: A Nikon AF micro 200 mm and a Sigma 135 mm DG HSM. All the digital images were analyzed using GOM Correlate software [27]. We calculated the nominal displacement, u, by taking the relative average displacement between two horizontal lines across the width placed symmetrically with respect to the notch. To scale this nominal displacement with the specimen size, the distance from the notch was chosen to be 1.2 times D. 3. Experimental results 3.1. Load-displacement curves The load and the nominal displacement curves were analyzed after the fracture tests (Fig. 2a-d). Similar to other quasibrittle materials [28 -- 34], a strong size effect can be observed in the load-displacement curves reported in Figs. 2a-d for all the thicknesses. For instance, in Fig. 2a, the size-1 (largest) shows an evidently linear behavior up to the peak load followed by sudden failure and snap-back instability [35], a typical 5 phenomenon of a brittle structure. However, as the specimen size decreases, the load- displacement curve becomes increasingly non-linear before the peak load (see size-4 curves in insets). This is because, as the structure size decreases, the relative size of the FPZ increases and the effects of the sub-critical damage induced in the FPZ becomes more significant. Another aspect to notice is the increased scatter of the strength as the structure thickness decreases. For DFCs with 1.1 mm thickness (see Fig. 2d), it is difficult to distinguish the failure loads between sizes 2 and 3 due to significant scatter in the exper- imental curves. In contrast, for higher thicknesses, the CoV of the data is significantly lower (see Fig. 2a). This can be qualitatively explained by considering the mesoscale morphology of DFCs as a function of the structure thickness. We will address this point in section 5.1. 3.2. Fracture surfaces Representative intra-laminar fracture surfaces of the tested specimens are plotted in Figs. 3a-l. Multiple damage mechanisms can be observed including platelet delam- inations, matrix microcracking, fiber pull-outs, and platelet splitting and breakages. Further, the fracture paths and the location of the fracture initiation depend on the structure size and thickness relative to the platelet size. For size-1 (see Figs. 3a-d), the fracture paths are almost perpendicular to the loading direction. As the structure size decrease (see Figs. 3e-l), the paths become more tortuous and random. The location of fracture initiation also depends highly on the size of the structure. A higher probability of fracture away from the notch can be observed for the smaller sizes (see Figs. 3k,l) due to the larger size of the FPZ compared to the structure dimensions. In fact, the stress redistribution in the FPZ can mitigate the severity of the notch, thus promoting frac- ture initiation from other weak spots such as resin rich areas, air pockets, and locations where the platelets are unfavourably oriented with respect to the loading direction. In addition to the structure size, the structure thickness also influences the process of fracture initiation and propagation. This is clearly shown in Figs. 3d,h,l where the 6 DFC specimens featuring the lowest thickness exhibit pronounced fiber breakages and a relatively "clean" fracture path. Moreover, as shown in Fig. 3d, the fracture happens away from the notch even for size-1. For larger thicknesses, the notch size featured by size-1 specimens is large enough to make it trigger the fracturing process. Yet, for the specimens with the lowest thickness, the fracture was still substantiated by other weak spots. 3.3. Structural size effect on the nominal strength We define the nominal strength as the failure load, Pc, over the gross cross-section: σN c = Pc/Dt where D and t are the specimen width and thickness. The experimental results of the average nominal strength are summarized in Table 2. As can be noted, the average strength clearly shows a decreasing trend as the structure size increases for all the thickness investigated in this work. To analyze such scaling effect, the following sections introduce a theoretical framework combining equivalent linear elastic fracture mechanics and stochastic finite element analysis. 4. Theoretical Framework To capture the scaling of the structural strength in DFC structures weakened by stress-free notches, we combine an equivalent fracture mechanics approach featuring a characteristic length-scale accounting for the finite size of the FPZ and stochastic finite element analysis to account for the random distributions of the platelets [13, 28]. 4.1. Analysis of size effect tests by Size Effect Law (SEL) for DFCs To consider the FPZ, an equivalent crack length, a, is defined as the sum of the initial crack length, a0 (see Fig. 1) and an effective FPZ size, cf , which is assumed to be a material property: a = a0 + cf (1) 7 Based on Linear Elastic Fracture Mechanics (LEFM), the energy release rate, G can be written as a function of the dimensionless crack length, α = a/D: G(α) = σ2 N D E∗ g(α) (2) Here, the nominal stress is σN = P/Dt where P is the load, D is the specimen width, and t is the specimen thickness, E∗ is an effective elastic constant, and g is the di- mensionless energy release rate which typically accounts for the effects of the geometry on the energy release rate. If the structure is homogeneous, g depends only on the geometry of the structure and takes the same value for geometrically-scaled specimens regardless of the structure size [23, 24]. However, DFCs are highly inhomogeneous ma- terials, the inhomogeneity dimensions being comparable with the size of typical DFC structures. Accordingly, different structure sizes may lead to a significantly different material morphology, thus affecting the energy release and making g dependent on the structure size, D and the thickness t. We can rewrite the Eq. (2) to account for the inhomogeneity of DFCs as follow [23, 24]: G(α, D) = σ2 N D E∗ g(α, D) (3) where the effect of the size D on the dimensionless energy release rate is explicitly introduced. In contrast, t is not introduced in the equation since Eq. (3) is used here to analyze geometrically-scaled specimens of the same thickness. Accordingly, a different set of dimensionless energy release rate functions, g (α, D) needs to be calculated for every thickness investigated in this work. At incipient failure, G must be equal to the fracture energy, Gf , which is assumed to be a material property. Substituting Eq. (1) into Eq. (3), we get: Gf = G(α0 + cf /D, D) = σ2 N cD E∗ g(α0 + cf /D, D) (4) where σN c is the nominal strength at failure. We further expand Eq. (4) using a Taylor series expansion at α0 with a constant D. The following equation is derived: (5) (cid:104) Gf = σ2 N cD E∗ (cid:105) g(α0, D) + cf D ∂g ∂α (α0, D) 8 Eq. (5) can be rearranged into the following form: (cid:115) σN c = E∗Gf Dg (α0, D) + cf gD (α0, D) (6) where gD(α0, D) = ∂g ∂α(α0, D). The subscript D corresponds to the partial differentia- tion with respect to α for a constant structure size D. It is noteworthy that Eq. (6) contains all the necessary components to capture the scaling of the nominal strength of DFC structures. The characteristic FPZ size, cf , enables to capture the transition from quasi-ductile to brittle fracturing behavior with increasing the structure size. Further, the dimensionless energy release rate parameters, g and gD combine the geometrical effect as well as the inhomogeneous material characteristics. These parameters can be calculated using the stochastic finite element method described in the following section. 5. Stochastic finite element model In order to characterize the fracture energy, Gf and the effective FPZ length, cf , we need to calculate the dimensionless energy release rate parameters, g(α0, D) and gD(α0, D). These two parameters are related to a release of elastic energy caused by the creation of new crack surfaces. Due to the inhomogeneous mesostructure, the release of energy is strongly related to two elements in addition to the geometry of the structure: the platelet constitutive properties, and the orientation distribution of the platelets. Therefore, modeling explicitly the distribution of the platelets is key. More details on the algorithm and its implementation can be found in [13] and Appendix A. Using the mesostructure generation algorithm, we first investigate the mesoscale morphology of DFCs with respect to the structure thickness. The distributions of the average platelet orientations through the thickness are considered. We generate a size 1 specimen (L = 178, D = 80 mm) for 4 different thicknesses using the same Cumulative Distribution Function (CDF) of in-plane platelet orientations. The range of the platelet orientation is −90◦ ≤ θ ≤ 90◦. We calculate the average absolute platelet orientations through thickness, θA, in each partition. Figure 4 presents the Probability Density 9 Function (PDF) of θA for each thickness. The bar graphs represent the frequency of θA from the mesostructure generation algorithm whereas the solid line represents a Gaussian probability fitting. As can be noted, the mean θA stays near ≈ 45◦ regardless of the structure thickness. However, the standard deviation changes dramatically with respect to the thickness, from 4.01◦ for t = 4.1 mm to 8.59◦ for t = 1.1 mm. To visualize the differences, we calculate the probability of θA ≥ 55◦, represented as shaded areas in Fig. 4. For t = 4.1 mm, the probability is 0.56% which is tremendously small comparing to 16.42% for t = 1.1 mm. This study quantitatively confirms that the probability of having unfavorable platelet orientations increases as the structure thickness decreases if the CDF of in-plane platelet orientations remains consistent. As a result, the average strength of DFCs deviates significantly in lower thickness as we observed from the experiments. It is worth mentioning that the results of this qualitative investigation are related to DFC plates where the distribution mechanism of platelets is not affected by the thickness. A different scenario can be expected in structures featuring complex geometrical features in which high platelet flow can occur. In such a case, the effect of the thickness of the structure must be investigated via an accurate morphological study. The completed mesostructure is now transferred to Abaqus/Standard [41] to find the dimensionless energy release rate functions. See Appendix B for the detailed im- plementation. Due to the stochastic nature of the problem, a total of 10 different DFC structures for each specimen sizes are generated to find the average g and gD. The pro- cess is repeated for all 4 different thicknesses. It is worth mentioning that additional 10 structures were generated for the thickness of 1.1 mm due to its high variations found in g and gD. A summary of all the results is provided in Fig. 5 whereas the mean and standard deviation for each thickness is given in Table 3. As can be noted, for thicknesses higher than 2.2 mm, the effect of the structure size in g and gD is negligible. Especially, for the thickness of 4.1 mm, there is hardly no dependency in g and gD with the size of the structure. This is because for sufficiently large thicknesses spatial distribution of platelets becomes almost uniform, and the in-plane behavior becomes 10 closer and closer to the one of an homogeneous medium. As a result, g and gD do not change for the geometrically-scaled structures. However, the effect of the material inhomogeneity remains strong for the t = 1.1 mm. As can be noted from Fig. 5d, the g and gD change with respect to the structure size with large deviations. This is consistent with the observations made in section 3.1 and Fig. 2. Consequently, we need to take an account of the change in g and gD for the different structure sizes. For the following calculations, we use the average value of g and gD for each structure sizes. 5.1. Fitting of the experimental data using the SEL To find the fracture properties Gf and cf , we combine the experimental results and the stochastic finite element model using Eq. (6). To do so, we introduce the following variables: Using theses variables, Eq. (6) can be transformed into the following linear expression: X = g gD D, Y = 1 gDσ2 N c (7) with: Y = C + AX C = cf E∗Gf , A = 1 E∗Gf Finally, the fracture energy, Gf , and the effective size of FPZ, cf , are: Gf = 1 E∗A , cf = C A (8) (9) (10) Figures 6a-d plot the linear regression analysis introduced in Eqs. (7) and (8) for the tests conducted in this work from which Gf and cf can be calculated leveraging Eqs. (10). The standard deviations are calculated following [31]. The measured Gf and cf for various thicknesses are reported in Table 3. Also, they are plotted in Fig. 7 along with a typical Al5083 [42] and T700G Quasi-Isotropic (QI) laminate composite [13] with a thickness of 3.1 mm. As can be noticed, the intra-laminar mode I fracture energy of DFCs are outstanding compared to Al5083, GAl f = 12.0 N/mm and even to the QI laminate composite, GQI f = 11 41.01 N/mm. In fact, the measured Gf for the DFC plates investigated in this work are 49.54, 63.47, 40.32, and 34.55 N/mm for thickness of 4.1, 3.3, 2.2, and 1.1 mm respectively. It is worth noting that these measured Gf are 2.9−5.3 times larger than the typical values of an aluminum alloy which is the main competing material of DFCs in the current aerospace industry. If ones consider the weight saved by using fiber composite structures, having such a high Gf opens new avenues for DFC structures especially for crashworthiness applications. Even comparing with the QI laminate composite made of the identical prepreg system, DFCs with equal thickness provide as much as 1.5 times higher Gf in the case of t =3.3 mm, thanks to the additional energy absorption mechanisms provided by complex mesostructure. From Fig. 7, we also observe that Gf depends strongly on the thickness of DFC plates. According to Fig. 7, Gf increases gradually up to about 45.03 N/mm for a thickness of ∼ 2 mm. Then, it slowly approaches an asymptotic value of about 57.77 N/mm for larger thicknesses. As can be noted, the fracture energy seems to follow an exponential trend, Y = A(1− eBX) with A = 57.77 and B = −0.76 although more data points for larger thicknesses are needed to completely clarify this aspect. When DFCs contain a sufficient number of platelets, the mesoscale morphology be- comes more uniform and the amount of fracture area created in the FPZ tends asymp- totically to a limit value, leading to no further changes of Gf with increasing plate thickness. This result provides an important index for the engineers who want to opti- mize the thickness of DFCs. Increasing the thickness of DFCs will not provide a further benefit in terms of the Gf after t ∼ 3 mm. For decreasing the thickness, we recommend paying extra attention because the fracture energy starts to drop significantly below t ∼ 2 mm. The effective FPZ size, cf also follows the similar trend. The cf for the thickness of 4.1, 3.3, 2.2, and 1.1 mm are 3.69, 8.67, 3.63, and 1.78 mm respectively. This is an agreement with noticeable quasi-ductile fracturing behavior of thicker DFCs. 12 5.2. Size Effect Curves We can also plot the size effect curves using the experimental values and the finite element modeling results. To do so, the Eq. (6) is rearranged as follow [23]: σ0(cid:112)1 + D/D0 where σ0 = (cid:112)E∗Gf /cf gD and D0 = cf gD/g. The normalized size effect curves are σN c = (11) plotted using the following axes: Y (cid:48) = σN c σ0 , X(cid:48) = D D0 (12) In Fig. 8, the size effect curves are plotted in a double-logarithmic scale. There are two asymptotes in the plots: the horizontal asymptote represents the strength predicted by the strength-based failure criterion, on which the size effect is negligible. The oblique asymptote with a slope of −1/2 represents the nominal strength according to LEFM. As can be noticed, regardless of all the explored thicknesses, DFCs show a strong size effect. Additionally, the experimental data clearly show a transition from stress-driven to energy-driven failure. This transition can be explained by considering the relative size of the FPZ compared with the structure size. The relative size of the FPZ, which is a material property, increases as the structure size decreases. Therefore, the nonlinear effect induced by the micro-damage in front of the crack-tip becomes non-negligible. For sufficiently small structures, the effect is so significant to cause a strong deviation from the LEFM. On the other hand, the effect of the FPZ is reduced as the structure size increases and the size effect is well captured by the LEFM. The characteristic size of the FPZ, cf , increases with the range of thickness tested in this study (see Table 3). The thinnest DFCs are showing the most brittle failure with the smallest effective FPZ size, cf , and fracture energy, Gf (see Fig. 8d). As the thickness increases, DFCs show pronounced pseudo-ductile response (see Fig. 8a). Based on the foregoing observations, we can conclude that the strong quasibrittle- ness must be taken carefully when we design the DFC structures with sharp notches or defects. Neither traditional LEFM nor strength-criteria has the capability to precisely 13 extrapolate the structural strength from the tested specimens, most of which belong to the transitional zone. When estimating the strength of larger structures, LEFM significantly underestimates the strength whereas strength-criteria overestimates it. If we continuously adapt LEFM in designing of DFC structures, the underestimations of strength capability may hinder the possible applications of DFCs in engineering appli- cations. Therefore, a proper model equipped with a characteristic length scale such as SEL or other equivalent models must be utilized to capture the quasibrittleness of DFCs. 5.3. Brittleness number of DFCs vs traditional laminated composites Another useful parameter to compare the fracturing behavior of a structure is called a brittleness number, β [31]. The β is defined as the ratio between the structure size D and transition size D0. When the β is less than 0.1, the structure can be considered as perfectly plastic or quasi-ductile. When the β is larger than 10, the structure fractures in a very brittle fashion. If the structure is in-between 0.1 and 10, the size of the FPZ is non-negligible, and the quasibrittleness should be considered. The results are plotted in Fig. 9. Regardless of the specimen sizes, all the experimented thicknesses are well within the quasibrittle zone. As the thickness increases, DFCs quickly deviate from the brittle boundary. The decreasing trend is stronger for the larger specimen sizes. However, after reaching the thickness of 3.3 mm, we observe a slight increase in the β. This is in fact the β is a function of cf which estimates the size of the fracture process zone. Irwin [43] estimated the size of the inelastic zone in front of the crack tip as lch = EGf /πσ2 N c. Since the both cf and lch estimate the size of plastic zone, we can assume that the cf has a similar function with the lch. As a result, the β can be a function of σ2 N c/EGf . Assuming change in E is negligible with respect to the thickness, both Gf and σN c increase, then saturate at a certain thickness. However, Gf could reach the saturation point earlier than σN c. Such unbalance in saturation thickness can cause the change in slope of β with respect to the thickness. After Gf and σN c both reach the saturation point, the β will remain constant. Further investigation is in 14 progress using the computational model to confirm the trend. 6. Conclusions Combining experiments and stochastic finite element modeling, this work studied the fracturing behavior and scaling effect of Discontinuous Fiber Composite (DFC) structures with different thicknesses. The following conclusions are drawn based on the results of this study: 1. The experimental results on geometrically-scaled Single Edge Notch Tension spec- imens of four distinct thicknesses showed a significant size effect on the nominal strength of DFC structures. For a given thickness, smaller specimens exhibited a pronounced pseudo-ductile fracture behavior with minimum scaling effect. In contrast, when the size of the specimen was sufficiently large, the scaling of the nominal strength approached Linear Elastic Fracture Mechanics (LEFM) asymp- totically and fracture occurred in a very brittle manner; 2. The transition from pseudo-ductile to brittle fracture with an increasing specimen size is related to the development of a significant Fracture Process Zone (FPZ) whose dimensions were found to be comparable to the platelet size. In the FPZ, signicant non-linear deformations due to sub-critical damage mechanisms, such as platelet delamination, matrix microcracking, and platelet splitting/fracture, promote strain redistribution and mitigate the intensity of the stress field induced by the crack/notch. This phenomenon is more pronounced for small structures since the size of a fully-developed FPZ is typically a material property and thus its influence on the structural behavior becomes increasingly significant as the structure size is reduced. For sufficiently large structures, the size of the FPZ becomes negligible compared to the structure's characteristic size in agreement with the inherent assumption of the LEFM that non-linear effects are negligible during the fracturing process; 3. A significant effect of the thickness was also found on the nominal strength of 15 DFC structures and its Coefficient of Variation (CoV). For a given specimen size, thinner specimens tended to fracture in a relatively brittle way with the nominal strength being closer to LEFM compared to thicker specimens. At the same time, the scatter of the experimental data increased with decreasing thickness from values in the order of 9.31% for a thickness of 4.1 mm to 21.26% for a thickness of 1.1 mm for the size 1 specimens; 4. The highest scatter of the tests on thinner specimens was confirmed by the analysis of the fracture morphology. For a given specimen size, the fracture process in thick DFCs was mostly driven by the FPZ developing at the notch tip. In contrast, the fracture of thin specimens was often initiated far from the notch, showing that failure was driven by random weak spots in the material rather than the notch. This phenomenon is related to the average number of platelets through the thickness: when this number is low, the probability of having weak spots with platelets that are not favorably oriented with respect to the load increases if one assumes the distribution mechanism of platelets is not affected by the thickness. This was clearly showed in this work by numerical simulations that reported a shift of the PDF of average platelet orientation through the thickness towards larger angles compared to the load axis with decreasing thickness; 5. To investigate the effect of the plate thickness on the fracture energy, Gf , and the effective length of the fracture process zone, cf , the approach combining equivalent fracture mechanics and stochastic finite element modeling proposed in [13] was used. This model accounts for the effects of the complex random mesostructure of the material by modeling the platelets explicitly. This theoretical framework was able to describe the scaling of structural strength and enabled the characterization of the mode I fracture energy of DFCs; 6. Gf and cf were estimated for a platelet size of 50×8 mm, and a structure thickness of 4.1, 3.3 2.2, and 1.1 mm respectively. It was found that Gf = 49.54 ± 9.57 N/mm, 63.47± 14.16 N/mm, 40.32± 14.98 N/mm, and 34.55± 9.50 N/mm while 16 cf = 3.69± 0.51 mm, 8.67± 1.37 mm, 3.63± 0.97 mm, and 1.78± 0.30 mm. These results clearly indicate a strong effect of the thickness on the fracture properties of the material. In particular, the fracture energy was found to increase gradually with the plate thickness up to an asymptotic value of about 58 N/mm when the thickness becomes larger than 3 mm. Further computational studies are ongoing to confirm this trend and to extend the study to other platelet sizes and plate thicknesses; 7. For all the thicknesses investigated in this work, the analysis of the fracture tests highlighted outstanding fracture energy of DFCs, from 2.9 to 5.3 times larger than the one of a typical Al5083 or a Quasi-Isotropic laminate made from the same prepregs for the platelet size investigated in this work. This result is particularly interesting in view of a possible use of DFCs for crashworthiness applications; The critical investigation of the foregoing results can pave the way for the develop- ment of novel strategies for the tuning of the fracturing behavior leveraging the DFC mesostructural morphology. Acknowledgments This study is financially supported by the FAA-funded Center of Excellence for Advanced Materials in Transport Aircraft Structures (AMTAS) and the Boeing Com- pany. Partial support is also provided by the Joint Center for Aerospace Technology Innovation (JCATI). We thank Ahmet Oztekin, Cindy Ashforth, and Larry Ilcewicz from the FAA, and William Avery from the Boeing Company for their guidance and support. We also thank the technical support provided by Bruno Boursier from the Hexcel Corporation. Appendix A DFC mesostructure generation algorithm The present algorithm is an extension of the stochastic laminate analogy proposed in [16, 36, 37]. The structure of interest is first divided into about 1 mm by 1 mm 17 partitions. This partition size is chosen based on a balance between accuracy and com- putational cost for the given platelet size [13]. For a different platelet size, the partition size should be recalculated. A single platelet with predefined length and width is gen- erated over the structure (see Fig. A1a). The platelet center point and the orientation are assigned following the uniform probability [13]. For more complex structures, the manufacturing process should be simulated explicitly to find the platelet orientation dis- tribution accurately [38]. Alternatively, the platelet morphology can be characterized by nondestructive evaluation techniques such as micro-computed tomography [39, 40]. The platelet information (e.g. platelet orientation) is then saved for each partition within the boundary of the platelet. Besides simulating the random in-plane distributions of the platelets, it is also im- portant to capture the local thickness variations. For DFCs, the local thickness is a spatial random variable. We found that the CoV for the average platelets through the thickness (∼ 24) was 0.22 [13]. This CoV is applied for all the other thickness plates because it corresponds to the identical manufacturing process, platelet size, and prepreg material. To match the foregoing morphological information, we control the platelet genera- tion following specific rules. First, a platelet-limit zone is created to limit the deposition of the platelets at certain partitions. If the number of platelets in the partitions reaches µ (1 + CoV) with µ = desired average number of platelets, the limit zone is assigned to reject further depositions. Second, the platelet generation process is subdivided into multiple stages called saturation steps. At each saturation step, the CoV is enforced on the current system of platelets. An example of a completed mesostructure with the target average platelets through thickness equals to 24 is shown in Fig. A1b whereas Fig. A2 outlines the logic of the platelet generation algorithm. After the mesostructure generation is completed, the thickness of the individual par- titions is adjusted to have a uniform total thickness. A uniform thickness is considered since the CoV on the thickness of the specimens is between 4− 7%. The reason for such a low CoV in measured thickness is the resin flow. Since the present model does not 18 explicitly model the flow, the thickness adjustment of individual partitions is necessary. Two scenarios are considered: (1) if the partition thickness is larger than the mean value, the thickness of the individual platelets is reduced linearly to match the mean thickness. (2) if the partition thickness is lower than the mean value, the thickness of individual platelets does not change. Instead, layers of resin having the matrix elastic constituents are introduced in-between the platelets. Appendix B Computation of g(α) and gD(α) and the fracture energy In this work the definition of G is used directly to calculated the energy release rate functions [31]: G(δ, a) = −1 t ∂a δ (cid:20)∂Π(δ, a) (cid:21) (B.1) where δ is the equilibrium displacement, t is the thickness, and Π is the potential energy of the structure. In the Abaqus/Standard [41] model, the platelets and the resins are assumed to be linear elastic with the material properties listed in Table A1. A mesh of 8-node, quadrilateral Belytschko-Tsay shell elements with reduced integration (S8R) is used with the maximum size of the element equal to the size of the partitions. A uni-axial uniform displacement is applied at the end where the other end is fixed in all directions. The reaction force, P as well as the Π are recorded. 10 different lengths of cracks are simulated for each structure. The size of a crack increment is equal to the size of the partition divided by 20. This results in ∆α ≈ 0.008 for D = 6.5 mm. In a previous study [24], ∆α = 0.0025 was used. Then, g and gD are calculated from Eq. (2). Figure B1 shows a typical plot of g against the normalized crack length, α. The linear regression analysis is performed to find the slope, gD at α = α0. 19 References References [1] Boeing 787 features composite window frames. Reinf Plast 2007;51(3):4. [2] Feraboli P, Gasco F, Wade B, Maier S, Kwan R, Masini A, DeOto L, Reggiani M. Lamborghini "Forged Composite" technology for the suspension arms of the sesto elemento. ASC 26rd Annual technical conference. Montreal, 2011. [3] Black S. Military OEM makes the switch from sandwich construction to com- pression molding to optimize composite aerospace part. High Perf Compos 2012, Cincinnati, OH. [4] Boursier B. New possibilities with HexMC, a high performance moulding com- pound, SAMPE Conference. Paris, 2001 [5] Moore S. 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Simulation of prepreg platelet compression molding: Method and orientation validation. J Rheology 2018:62(2):1443-1455 [39] Wan Y, Straumit I, Takahashi J, Lomov SV. Micro-CT analysis of the orientation unevenness in randomly chopped strand composites in relation to the strand length. Compos Struct 2018;206:865-875 [40] Denos BR, Sommer DE, Favaloro AJ, Pipes RB, Avery WB. Fiber orientation measurement from mesoscale CT scans of prepreg platelet molded composites. Compos Part A 2018:114:241-249 [41] Dassault Systemes ABAQUS (2018) 'ABAQUS Documentation', Providence, RI. [42] Tsangarakis N. All modes fracture toughness of two aluminium alloys. Eng Frac Mech 1987;26:3:313-321 [43] Irwin, G. R. Fracture, Vol. VI of Encyclopedia of Physics. Springer, 1958. 22 Figure 1: Geometry details of the Single Edge Notch Tension specimens. Figure 2: Load-displacement curves of DFCs with the thickness of a) 4.1 mm, b) 3.3 mm, c) 2.2 mm, and d) 1.1 mm. 23 Figure 3: Representative fracture surfaces of Single Edge Notch Tension specimens for all experimental cases. An arrow indicates an initial notch position. Figure 4: Probability density distributions of the average platelet orientations through the thickness, θA, obtained by simulation. Plate thickness: (a) 4.1 mm, (b) 3.3 mm, (c) 2.2 mm, and (d) 1.1 mm. 24 Figure 5: Dimensionless energy release rate parameters, g and gD for the thickness of (a) 4.1 mm, (b) 3.3 mm, (c) 2.2 mm, and (d) 1.1 mm. Figure 6: Linear regression analysis to find the fracture properties of DFCs with thickness of (a) 4.1 mm, (b) 3.3 mm, (c) 2.2 mm, and (d) 1.1 mm. 25 Figure 7: Measured fracture energy of DFCs with the exponential least square fitting. Figure 8: Measured size effects for DFCs with thickness of (a) 4.1 mm, (b) 3.3 mm, (c) 2.2 mm, and (d) 1.1 mm. 26 Figure 9: Change of the brittleness number, β, as a function of the thickness for all the experimented sizes. Figure A1: (a) A platelet geometry in partitions. The platelet's length and width (Lp, Dp) are 50× 8 mm. The mesostructure algorithm chooses the center point (xp, yp) and orientation (θ) based on the uniform distribution. (b) A sample 50 × 50 mm plate with an average of 24 platelets through the thickness. 27 Figure A2: The DFC mesostructure generation algorithm flow chart. Figure B1: A sample calculation of dimensionless energy release rate parameters, g and gD. 28 Input parameters:Platelet size, Plate thickness, etcPartitions the geometry Create a platelet with random center point and orientationSave platelet into the partitionsDecrease platelet thicknessInsert resin layers in between plateletsImport data to ABAQUSIncrease the saturation pointCheck the platelet-limit zoneCheck the saturation pointPassFailCheck the plate thicknessHighLowPassFailPassFailCheck each partition thicknessTable 1: Geometry information of the Single Edge Notch Tension (SENT) specimens. Size Width, D Gauge length, L Total length, LT otal Notch length, a0 (mm) (mm) 1 2 3 80 40 20 178 89 44.5 (mm) 254 165 120.5 (mm) 16 8 4 6.5 4 * Tested thicknesses are 4.1, 3.3, 2.2, 1.1 mm with the platelet size of 50 × 8 mm. 14.5 90.5 1.3 Table 2: The average failure strength with standard deviation of tested SENT specimens. Thickness (mm) Size1 4.1 3.3 2.2 1.1 166.7 ± 15.53 153.8 ± 27.61 158.2 ± 45.90 128.5 ± 27.32 Failure strength, σN c (MPa) Size2 216.0 ± 20.31 198.2 ± 15.54 200.5 ± 44.11 180.0 ± 33.82 Size3 285.8 ± 32.32 214.2 ± 14.58 248.0 ± 71.04 239.0 ± 80.28 Size4 297.7 ± 35.27 242.2 ± 20.14 284.3 ± 55.82 354.8 ± 78.27 29 Table 3: The fracture properties and dimensionless energy release rate parameters calculated from the experiments and the stochastic FEM. Thickness Fracture energy, Gf Effective FPZ length, cf (mm) 4.1 3.3 (mm) (N/mm) 49.54 ± 9.57 63.47 ± 14.16 40.32 ± 14.98 34.55 ± 9.50 3.69 ± 0.51 8.67 ± 1.37 3.63 ± 0.97 1.78 ± 0.30 * Averaged FE simulation results of each thicknesses. 2.2 1.1 g(α0)∗ - gD(α0)∗ - 0.92 ± 0.08 0.98 ± 0.12 1.00 ± 0.12 1.21 ± 0.33 5.54 ± 1.43 6.23 ± 2.01 6.21 ± 2.64 7.78 ± 4.36 Table A1: Elastic material properties for the T700G and matrix layers. Properties T700G Matrix Platelet initial thickness, tp [mm] 0.139 Varies Longitudinal modulus, E1 [GPa] 135 Transverse modulus, E2 [GPa] Shear modulus, G12 [GPa] Poisson ratio, ν12 10 5 0.3 3 3 1.1 0.35 30
1802.05270	2	1802	2018-03-16T00:52:20	Digital Fourier transform spectroscopy: a high-performance, scalable technology for on-chip spectrum analysis	[ "physics.app-ph", "physics.optics" ]	Optical spectrum analysis is the cornerstone of spectroscopic sensing, optical network performance monitoring, and hyperspectral imaging. While conventional high-performance spectrometers used to perform such analysis are often large benchtop instruments, on-chip spectrometers have recently emerged as a promising alternative with apparent Size, Weight, and Power (SWaP) advantages. Existing on-chip spectrometer designs, however, are limited in spectral channel count and signal-to-noise ratio (SNR). Here we demonstrate a transformative on-chip digital Fourier transform (dFT) spectrometer that can acquire high-resolution spectra via time- domain modulation of a reconfigurable Mach-Zehnder interferometer. The device, fabricated and packaged using industry-standard silicon photonics technology, claims the multiplex advantage to dramatically boost SNR and unprecedented scalability capable of addressing exponentially increasing numbers of spectral channels. We further implemented machine learning regularization techniques to spectrum reconstruction and achieved significant noise suppression and spectral resolution enhancement beyond the classical Rayleigh criterion.	physics.app-ph	physics	Digital Fourier transform spectroscopy: a high-performance, scalable technology for on-chip spectrum analysis Derek M. Kita1,, Brando Miranda2, David Favela3, David Bono1, Jérôme Michon1, Hongtao Lin1, Tian Gu1 and Juejun Hu1, 1Department of Materials Science & Engineering, Massachusetts Institute of Technology, 2Center for Brains, Minds & Machines, Massachusetts Institute of Technology, Cambridge, Cambridge, Massachusetts, USA 3Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA Massachusetts, USA [email protected], [email protected] Introductory paragraph Optical spectrum analysis is the cornerstone of spectroscopic sensing, optical network performance monitoring, and hyperspectral imaging. While conventional high-performance spectrometers used to perform such analysis are often large benchtop instruments, on-chip spectrometers have recently emerged as a promising alternative with apparent Size, Weight, and Power (SWaP) advantages. Existing on-chip spectrometer designs, however, are limited in spectral channel count and signal-to-noise ratio (SNR). Here we demonstrate a transformative on-chip digital Fourier transform (dFT) spectrometer that can acquire high-resolution spectra via time- domain modulation of a reconfigurable Mach-Zehnder interferometer. The device, fabricated and packaged using industry-standard silicon photonics technology, claims the multiplex advantage to dramatically boost SNR and unprecedented scalability capable of addressing exponentially increasing numbers of spectral channels. We further implemented machine learning regularization techniques to spectrum reconstruction and achieved significant noise suppression and spectral resolution enhancement beyond the classical Rayleigh criterion. Optical spectrometers are extensively applied to sensing, materials analysis, and optical network monitoring. Conventional spectrometers are bulky instruments often involving mechanical moving parts, which severely compromises their deployment versatility and increases cost. Photonic integration offers a solution to miniaturize spectrometers into a chip-scale platform, albeit often at the cost of performance and scalability. Existing on-chip spectrometers mostly rely on dispersive elements such as gratings1-6, holograms7,8, and microresonators9-11. These devices suffer serious SNR penalties when designed for high spectral resolution, as a result of spreading input light over many spectral channels. Moreover, the device footprint and complexity scale linearly with the spectral channel number N, as each channel requires an individually addressed receiver (photodetector) and the spectral resolution is inversely proportional to the optical path length (OPL). The SNR degradation and linear scaling behavior preclude high-performance on-chip spectrometers with channel counts rivaling their benchtop counterparts, which typically have hundreds to thousands of spectral channels. We note that the constraints also apply to spectrometers based on the wavelength multiplexing principle, where each receiver captures an ensemble of monochromatic light rather than one single wavelength12-18. Unlike dispersive spectrometers, Fourier transform infrared (FTIR) spectrometers overcome the trade-off between SNR and spectral resolution benefiting from the multiplex advantage, also known as the Fellgett's advantage19. Traditional benchtop FTIR spectrometers use moving mirrors to generate a tunable OPL, a design not readily amenable to planar photonic integration. On-chip FTIR spectrometers instead rely on thermo-optic or electro-optic modulation to change the OPL in a waveguide20-23. The miniscule refractive index modifications produced by these effects, however, result in large device size and constrain the practically attainable spectral resolution to tens of cm-1 in wave number, far inferior compared to their benchtop counterparts. In this letter, we propose and experimentally demonstrate a novel spectrometer architecture that resolves the performance and scalability challenges. The centerpiece of the spectrometer is a reconfigurable Mach-Zehnder interferometer (MZI) illustrated in Fig. 1a. Each arm consists of j/2 cascaded sets of optical switches connected by waveguides of varying lengths, where j is an even integer. When light propagates through the reference paths (marked with black color) in both MZI arms, the MZI is balanced with zero OPL difference between the two arms. Lengths of the waveguide paths in red differ from the reference paths by a power of two times ΔL. Each permutation of the switches thus corresponds to a unique OPL difference between the arms, covering 0 to (2j - 1)·ng·ΔL with a step size of ng·ΔL, where ng represents the waveguide group index. Unlike traditional FTIR spectrometers where the OPL is continuously tuned, resembling an analog signal, our digital Fourier transform (dFT) spectrometer derives its name from the set of "digitized" binary optical switches, with the state of each corresponding to a unique permutation of the spectrometer and a unique OPL difference. The number of spectral channels, defined by the distinctive optical states the device furnishes, is: and the spectral resolution is given following the Rayleigh criterion24-26: , , (1) (2) where  denotes the center wavelength. The equations reveal three key advantages of the dFT spectrometer technology over state-of-the-art. First, both the spectral channel count and resolution scale exponentially with the number of cascaded switch stages. This unique exponential scaling * For multiple-scattering-based spectrometers, the device dimension scales with spectral resolution quadratically. 2jN221221jjggnLnLbehavior allows high-resolution spectroscopy with a radically simplified device architecture. Second, direct modification of the waveguide path offers over 100 times larger OPL tuning compared to thermo-optic or electro-optic-based index modulation, enabling superior spectral resolution within a compact device. An additional benefit is that the device is far less sensitive to temperature variations than existing on-chip FTIR spectrometers, as the temperature-induced OPL fluctuation scales linearly with the physical length of the interferometer arms. Third, the device benefits from the multiplex advantage to ensure significantly enhanced SNR over the dispersive devices. Moreover, the spectrometer only requires a single-element photodetector rather than a linear array, which further reduces system complexity and cost. We experimentally validated the dFT spectrometer concept by demonstrating a 64-channel device (j = 6) operating at the telecommunication C-band. The device was fabricated leveraging a commercial silicon photonics foundry process, where the optical switches employ a custom compact thermo-optic phase shifter design27. Figure 1b presents a micrograph of the spectrometer after front-end-of-line silicon fabrication. The chip was subsequently packaged with bonded fiber arrays and electrical connectors. Details of the fabrication and packaging processes are elaborated in the Methods section. The spectrometer also integrates an on-chip germanium photodetector and a standard FC/PC fiber connector interface, making it a standalone "plug-and-play" device for optical spectrum analysis (Fig. 1c). The spectrometer was characterized using a setup depicted in Fig. 2a. High-resolution transmittance spectra of the device were first recorded by wavelength sweeping a tunable laser between 1550 and 1570 nm, for all 64 permutations of the switch on/off combinations. The 64 spectra are plotted in Fig. 2c, each associated with a unique OPL difference between the MZI arms. Fig. 1. (a) Block diagram illustrating the generic structure of a dFT spectrometer with 𝒋 switches and 𝑲 = 𝒋/𝟐 − 𝟏 repeated stages indexed by 𝒌 ∈ [𝟏, 𝑲]; (b) top-view optical micrograph of the 64-channel dFT spectrometer after front-end-of-line silicon fabrication, showing the interferometer layout, the thermo-optic switches and waveguide-integrated germanium photodetector; (c) photo of the fully-packaged, "plug-and-play" dFT spectrometer with standard FC/PC fiber interface and a ribbon cable for control and signal read-out. The ensemble of spectra forms an m × n calibration matrix A. Each row of A represents a transmittance spectrum and contains n = 801 elements, the number of wavelength points in the scan. Each column corresponds to a discretely sampled interferogram of the narrow-band laser and contains m = 64 elements. The intensity measured by the detector for an arbitrary input polychromatic signal (represented by a column vector x with 801 elements) is: , (3) where the interferogram y is a column vector with 64 elements, each gives the detector output at a particular switch permutation. The vector y was measured by recording the detector output at all 64 permutation states. Since we measured y with size 64 to infer x with size 801, the system is underconstrained and therefore regularization techniques are required to specify a unique solution. To do this, we applied a non-negative elastic net method28 with a smoothing prior on the first derivative. This method, that we call "elastic-D1" from here on, solves the regularization problem: . (4) where α1, α2, and α3 are hyperparameters that weight the corresponding L1- and L2-norms on 𝒙, and the L2-norm on the first derivative specified by the matrix D1. The combination of bounds on the L1-norm (that induces sparsity on the spectrum), L2-norm (that bounds magnitude of the spectrum), and first derivative of the spectrum (that sets the desired smoothing) produce exceptional reconstructions on both broad and narrow spectral features without requiring knowledge of the true input spectrum. Since Eq. 4 is a non-negative quadratic program, it is readily solvable with standard convex optimization tools29. Lastly, we determine optimal values of the hyperparameters through leave-one-out cross-validation30, through which we take two consecutive measurements of the interferogram (y1 and y2) and choose hyperparameters that maximize the coefficient of determination R2(A2x, y2), where A1 and A2 are two separate measurements of the Fig. 2. (a) Schematic diagram of the dFT spectrometer characterization setup; (b) an exemplary transmission spectrum of the dFT device corresponding to an arm length difference of 0.7 mm; (c) transmission spectra of the device for all 64 permutations of the switch on/off combinations: the ensemble of 64 spectra constitute the basis set for spectrum reconstruction. Ayx2221232122,0min1xxyAxxxDxbasis, and x is the computed spectrum from y1 and A1. Details of the algorithm are presented in the Supplementary Information. sparse laser To demonstrate the versatility of the dFT spectrometer, we applied the elastic-D1 reconstruction technique to experimentally measured interferograms for two types of inputs, polychromatic signals consisting of discrete lines and broadband signals with complex spectral features (see Methods). Figure 3 plots the reconstructed spectra comprising two laser lines with slightly different amplitudes and varying wavelength spacing. The elastic-D1 technique precisely reproduces the laser wavelengths with ± 0.025 nm accuracy, only limited by the finite wavelength step size of the calibration matrix (0.025 nm). The spectral resolution of our device, determined here by the minimum resolvable wavelength detuning two lines, significantly outperforms the Rayleigh criterion of 0.4 nm with an experimentally determined value of 0.2 nm. The enhanced reconstruction quality is a result of the elastic- D1 method's automatic consideration of the sparsity, tradeoffs magnitude, and smoothness (Supplementary Information). Figure 4 compares the spectra of three unique broadband inputs recorded using a benchtop optical spectrum analyzer as a reference and reconstructed spectra using the same 64-channel dFT device and elastic-D1 algorithm. The high reconstruction quality on arbitrary input spectra with characteristic spectral features ranging from Fig. 3. Spectra consisting of two laser lines with varying spacing measured using the 64-channel dFT spectrometer and reconstructed by applying the elastic-D1 algorithm. Inset shows zoomed-in images of the narrow spectral features for input laser lines with 100 pm and 200 pm spacing. between spectral between laser Fig. 4. Examples of broadband, arbitrary signal reconstruction showing spectra measured by a benchtop optical spectrum analyzer (black curves) and the dFT spectrometer (red curves). several nanometers to well below the Rayleigh limit validates dFT spectroscopy as a generic, powerful tool for quantitative spectroscopy. In conclusion, this work pioneers dFT spectroscopy as a high-performance, scalable solution for on-chip optical spectrum analysis. Its unique exponential scalability in performance, superior SNR leveraging the multiplex advantage, reduced thermal sensitivity, as well as compact and remarkably simplified device design are among the key advantages of the technology. Moreover, its proven compatibility with industry-standard foundry processes enables scalable manufacturing and drastic cost reduction. We further implemented machine learning regularization techniques to achieve significant noise suppression and resolution enhancement. The powerful combination of dFT spectroscopy and machine learning techniques will empower future applications of spectroscopy such as chem/bio sensors-on-a-chip, space-borne spectroscopy, and optical network monitoring. Methods Device fabrication. Device layout and mask generation was done using Luceda's IPKISS design framework and tools. The dFT spectrometer chips were fabricated on the imec-ePIXfab active silicon photonics platform (ISIPP25G) multi-project wafer service. Standard passive and active components (excluding the custom compact thermo-optic phase modulator) from the imec-ePIXfab process design kit (PDK) library were used to construct the dFT spectrometer. The devices were subsequently packaged at Tyndall National Institute with fiber grating coupler arrays and electrical connections on a thermoelectric cooler for temperature control. Device characterization. Packaged devices were characterized at MIT with a swept single-frequency external cavity laser to determine the wavelength response of the device for each switch state, using the integrated germanium detector for signal readout. The thermo-optic switches were initially calibrated by tuning the heater powers until the frequency response of the top arm or bottom arm was flat, as measured from one of two "tap" ports, as indicated in Fig. 1. Heater preamplifiers, programmable digital control logic, and photodetector transimpedance amplifiers with variable gain are all implemented with custom electronics and automation software. The elastic-D1 technique was implemented in Python with free software for convex optimization29. Testing on two input-lasers with different wavelength spacing was performed by combining two separate tunable continuous-wave external cavity lasers through a 2 × 2 beam splitter with one output port to an optical spectrum analyzer and the second to the dFT spectrometer. To generate the broadband input signal shown in Figs. 4a and 4b, we couple the amplified spontaneous emission from an erbium-doped fiber amplifier (EDFA) to on-chip imbalanced MZI structures with arm length differences of 100 μm and 200 μm, respectively. The spectrum in Fig. 4c is obtained by passing light through both MZI structures connected in series. The complex spectral features are attributed to both interference in the imbalanced MZI as well as Fabry-Perot fringes due to multiple reflections at connectors and couplers. The reference spectra were recorded using a Yokogawa AQ6375B optical spectrum analyzer. Raw data from the basis measurements and all interferogram measurements are available from the corresponding author upon request. Code availability. Custom code written in Python to perform spectral reconstruction via the elastic-D1 regularized regression technique is available upon request. Acknowledgments The authors gratefully thank Lionel C. Kimerling, Anu Agarwal, and Rajeev Ram for providing access to device measurement facilities. Funding support is provided by the National Science Foundation under award number 1709212, MIT SENSE.nano Seed Grant, and the Department of Energy under Grant DE- NA0002509. D.K. acknowledges the Kavanagh Fellowship for Technology Commercialization provided by the Saks Kavanaugh Foundation for financial support. Author contributions D.K. designed and characterized the spectrometer device. B.M. and D.K. developed the machine learning algorithms for spectrum reconstruction. D.F., D.B., and D.K. designed and assembled the electronics for device testing. J.M. and H.L. assisted in device characterization. J.H. conceived the spectrometer concept and supervised the research. T.G. and D.K. contributed to the concept formulation. All authors contributed to technical discussions and writing the paper. Competing financial interests The authors declare no competing financial interests. References 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Subramanian, A. Z. et al. Silicon and silicon nitride photonic circuits for spectroscopic sensing on- a-chip. Photonics Research 3, B47-B59 (2015). Cheben, P. et al. A high-resolution silicon-on-insulator arrayed waveguide grating microspectrometer with sub-micrometer aperture waveguides. Opt. Express 15, 2299-2306 (2007). Kyotoku, B. B., Chen, L. & Lipson, M. Sub-nm resolution cavity enhanced micro-spectrometer. Opt. Express 18, 102-107 (2010). Ma, X., Li, M. & He, J.-J. CMOS-compatible integrated spectrometer based on echelle diffraction grating and MSM photodetector array. 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1902.05368	1	1902	2018-11-22T13:12:05	$\pi$/2 Mode Converters and Vortex Generators for Electrons	[ "physics.app-ph", "physics.optics" ]	In optics, mode conversion is an elegant way to switch between Hermite Gaussian and Laguerre Gaussian beam profiles and thereby impart orbital angular momentum onto the beam and to create vortices. In optics such vortex beams can be produced in a setup consisting of two identical cylinder lenses. In electron optics, quadrupole lenses can be used for the same purpose. Here we investigate generalized asymmetric designs of a quadrupole mode converter that may be realized within the constraints of existing electron microscopes and can steer the development of dedicated vortex generators for high brilliance electron vortex probes of atomic scale.	physics.app-ph	physics	π/2 Mode Converters and Vortex Generators for Electrons C. Krambergera, S. Lofflera,b, T. Schachingerb, P. Hartelc, J. Zachc, P. Schattschneidera,b,∗ bUniversity Service Center for Transmission Electron Microscopy, TU Wien, Wiedner Hauptstrasse 8-10/E057-02, 1040 Wien, Austria aInstitute of Solid State Physics, TU Wien, Wiedner Hauptstrasse 8-10/E138, 1040 Wien, Austria cCEOS Corrected Electron Optical Systems GmbH, Englerstrasse 28, 69126 Heidelberg, Germany Abstract In optics, mode conversion is an elegant way to switch between Hermite Gaussian and Laguerre Gaussian beam profiles and thereby impart orbital angular momentum onto the beam and to create vortices. In optics such vortex beams can be produced in a setup consisting of two identical cylinder lenses. In electron optics, quadrupole lenses can be used for the same purpose. Here we investigate generalized asymmetric designs of a quadrupole mode converter that may be realized within the constraints of existing electron microscopes and can steer the development of dedicated vortex generators for high brilliance electron vortex probes of atomic scale. Keywords: electron microscopy, vortex beams, mode conversion, orbital angular momentum two-way LG to HG beam conversion was demonstrated in a proof of principle experiment for electron beams [17], mode matching could not be achieved. Therefore the donut pro- file was only transient and could not be projected to an- other plane. To picture how mode conversion occurs we can replace an incident beam with a straight central phase jump of π (a Hilbert beam) by two sub-waves that possess the same mirror symmetry as vertical and horizontal HG modes. Figure 1 demonstrates quite generally the essence of mode 1. Introduction A vortex beam can be characterized by a discontinuity in the phase that dictates a central void in the intensity profile. Further it features a quantized orbital angular momentum (OAM) in units of ¯h. The associated mag- netic moment and chirality make electron vortex probes sensitive to magnetic excitations and even give them the ability to discriminate chiral crystals [1, 2, 3]. The de- velopment in the field was propelled by the close analogy to the established methods for optical vortex generation [4, 5, 6] as well as their application in helical spectroscopy [7, 8, 9]. While light optics has stimulated several methods of electron vortex generation [10, 11, 12], electron vortices can also be formed by multipoles [13] or magnetic fields [14, 15]. Each of these methods has its own merits and challenges, but none of them offers a pure singular OAM state without the need to block out unwanted portions of the intensity. Yet one particular optical setup holds the promise to work on the entire beam in high purity, so that there would not be any need to filter out other diffraction orders or spu- rious unwanted angular states: the π/2 mode converter (MC) [16] converts Hermite Gaussian (HG) beams to cor- responding Laguerre Gaussians (LG) ones and vice versa. The first order cases are: HG(x, y) ∝ 2x · e LG(r, φ) ∝ 2r · e − x2+y2 , w2 w2 · eiφ. − r2 (1) (2) (x, y) and (r, φ) are the Cartesian and polar coordinates, respectively. w is the width defining parameter. While ∗Corresponding author URL: [email protected] (P. Schattschneider) Preprint submitted to Ultramicroscopy Figure 1: principle of π/2 mode conversion. The output beam of a Hilbert device can be split into a sum of two HG-like components. Acquiring a Guoy shift of π/2 in one of the components produces a stepwise azimuthal phase ramp. conversion: The two subwaves propagate independently from the entrance to the exit, where they will have accu- mulated a relative phase (i.e. Guoy shift) of π/2. Thus their coherent superposition creates an azimuthal 'stair case' phase ramp and a corresponding ring current. The beam has now non-zero OAM. We propose that the quadrupole lenses in existing aber- ration correctors can be re-purposed to realize a fully func- tional π/2 MC. When an incoming beam is prepared with a suitable wavefront pattern, it would be completely trans- July 12, 2021 8 1 0 2 v o N 2 2 ] h p - p p a . s c i s y h p [ 1 v 8 6 3 5 0 . 2 0 9 1 : v i X r a formed into a vortex beam without sacrificing intensity. Switching between left and right handed helical operation would be as stable and reproducible as setting electron lenses. The ability to perform mode conversion on elec- tron beams will doubtlessly also open new avenues in mode sorting [18], especially in conjunction with programmable phase masks [19]. We present an analytical treatment of general asym- metric setups and also run simulations for entire electron optical setups of different π/2 MCs. 2. Gaussian Mode Converters 2.1. The optical π/2 mode converter We reproduce shortly the principle of the symmetric π/2 MC given in Ref. [16]. The schematic of the setup is illustrated in Fig. 2. There is an astigmatic beam waist lo- cated at z = 0 and two cylinder lenses at positions z = −a and z = a with a distance of d = 2a. In light optics with static lenses this distance is the only adjustable degree of freedom in the setup. Apart from the incident Gaussian beam, there are 3 conditions to be fulfilled. The conditions are: wx wy lens cylinder cylinder • the radii of curvature (cid:18) R(z) = z 1 + (cid:16) zr (cid:17)2(cid:19) z (6) in the xz and in the yz cuts after the second cylinder lens must fulfill Rx,z(a) = Ry,z(a) = −R(−a). Equations 4 and 5 give immediately (cid:16)√ (cid:17) zrx = a , zry = a 2 − 1 (cid:16)√ (cid:17) . 2 + 1 (7) (8) With this result, the widths at the entrance and exit planes follow as: w(−a) = w(a) = With Newton's equations, (cid:115)√ 2 · d k . (9) 1 Ri = 1 Rx(−a) + 1 f = 1 Ry(−a) , (10) and the previous results for the width Eqn. 9 and the Rayleigh ranges Eqn. 8, this gives 2 · f (11) d = √ −a wi =(cid:112)2f /k 0 d = f √ 2 a wo =(cid:112)2f /k Figure 2: Symmetric optical π/2 mode converter. The blue shaded yz component is a quasi-collimated beam. The identical cylinder lenses only act on the red shaded xz component. • the widths of Gaussian profile evolve as (cid:115) (cid:114) 2zr (cid:19)2 · (cid:18) z zr w(z) = 1 + z for a symmetric optical π/2 MC. 2.2. The quadrupole π/2 mode converter The key differences between electron and light optics are that the distances and positions are fixed but the fo- cal lengths can be controlled via lens excitations. Also, quadrupoles (QPs) are widely available. For electrons we thus propose to replace the cylinder lenses with QPs. This has no effect on Eqns. 4&5 and hence on the Rayleigh ranges zR. If the QPs are always focusing the xz com- ponent and defocusing the yz component, then Newton's equations read as: . (3) 1 Ri = 1 Rx(−a) + 1 f = 1 Ry(−a) − 1 f . k Here zr is the Rayleigh range. The wavenumber k and wavelength λ follow kλ = 2π. The widths in the xz and yz cuts must be equal at the exit plane z = +a: This modifies the relation from Eqn. 11 to √ 2 · d f = wx(a) = wy(a). (4) • the Gouy phase difference of the xz and yz compo- nents accumulated at the second cylinder lens must be π/2. Due to center symmetry this is equivalent to: (cid:18) a (cid:19) zrx tan−1 − tan−1 (cid:18) a (cid:19) zry = π 4 and the widths at the entrance and exit plane scale ac- cordingly: w(−a) = w(a) = 2 · √ 2 · d k . (14) (cid:115) Notably, the curvatures of the incident and outgoing beam simplifies to Ri = −Ro = −d. (15) . (5) 2 (12) (13) Replacing cylinder lenses with QPs simplifies the solutions of the mode matching conditions considerably. The incom- ing and outgoing curvatures and the quadrupole focusing (or defocusing) are functions of the distance d only, and not of the wavenumber k. Only the beam widths scale with (cid:112)d/k. The actions of round lenses and QPs correspond to two orthogonal Zernike polynomials (Z 0 2 , respec- tively), while a cylinder lens is a superposition of the two. QPs are therefore better suited for aligning a π/2 MC. 2 and Z 2 2.3. The asymmetric π/2 mode converter If the constraint of equal focal lengths of the two QPs is relaxed, then the beam waists will be at different positions for the xz and yz component. In addition, the incoming and outgoing widths will differ, but the radii of curvature in Eqn. 15 are not affected. wy wx lens QP1 QP2 z0y z0x d z Figure 3: Schematics of an asymmetric π/2 MC for electrons with wo/wi = 2.12 as in the simulations in Figs. 6&9. The preceding round lens provides the correct curvature. The quadrupoles (QP1 & QP2) focus the xz component (red shading) and defocus the yz component (blue shading). If Eqns. 4&7 are met, (i.e. the astigmatism is canceled) then the the relative Guoy shift Ψ is given by the distance d as well as the QPs focal lengths fi and fo. tan Ψ = 2u 1 − u2 , u2 = fifo d2 − 1. (16) that would be required in a symmetric π/2 MC (Eqn. 14), zr << d will also hold, and the required lens excitations can be found by minimizing the effects of wobbling QP2. Then a smaller condenser aperture can be used with the same lens settings, to provide a smaller wi with the cor- rect curvature. If the reduced wi is comparable to the w of the symmetric π/2 MC, the required fi and fo will also be comparable. Since the outgoing radius of curvature does not depend on the Guoyshift, pairs of fi and fo can be realized by choosing any one and adjusting the other one, until u from Eqn. 16 becomes 1. There is no need to match the width of the symmetric π/2 MC exactly. 3. Spherical Mode Converters 3.1. Guoy phase Sculpting a Gaussian intensity profile is impractical if not impossible in electron microscopy. Instead we consider standard spherical waves as an input. The Guoy phase of an astigmatic higher order HGnm beam follows a tan−1 function. Ψ = (n + ) tan−1( 1 2 z − zx zrx ) + (m + ) tan−1( 1 2 z − zy zry ) (19) where zx and zy are the positions of the line foci and zrx and zry are the respective Rayleigh lengths. A spherical wave has a different Guoy phase. A typical example of an incoming electron beam in the geometric optic regime is shown in Fig. 4. In a properly aligned π/2 MC, Ψ is π/2 and the dimen- sionless parameter u becomes 1. The conditions read (see supplementary information): (cid:114) wi = 2 · fi k , (cid:114) fi · fo = 2 · d2, 2 · fo k wo = . (17) (18) The proper choice of quadrupole focal lengths Eqn. 17 for an incoming beam width wi according to Eqn. 18 allows to achieve u = 1 with a magnification of wo/wi. A schematic example is sketched in Fig. 3. 2.4. Practical considerations When it comes to electron optical alignment, the very appealing benefit of the asymmetric π/2 MC design is, that there is only one prior requirement on the non-astigmatic incoming beam. Its curvature has to be centered onto the principal plane of QP2. This can be readily achieved by focusing a wide enough beam onto QP2. If the in- coming width wi is several times larger than the width w Figure 4: Guoy phase of a spherical wave (full lines) and an HG00 beam (dashed) at different radii. A lens with a focal length of 120 mm is positioned at z = −119.4 mm. The aperture radius and Gaussian width at the lens are w = r/ 2 = 1250 nm. Acceleration voltage Ua = 200 kV. The inset shows the Gaussian waist and Airy disk formed at z = 0, the dots correspond to the different radii. Horizontal gridlines are at π/4, π/2 and 3π/4, vertical gridlines count Rayleigh ranges zr = 7.3 mm of the Gaussian beam. √ It is linear around zero defocus [20], and for small de- focus values up to one Rayleigh range it approximates well that of a HG00 beam with the same focus under the con- 2 times as large as the dition that the aperture radius is width w of the incoming Gaussian. The traces for the √ 3 Guoy phase at roughly 1/3 and 2/3 of the radius of the Airy disk are also very linear up to z = zR. This compar- ison illustrates that a Gaussian input for the π/2 MC can be replaced by a spherical wave with a scaled diameter. 3.2. Hilbert beams A feasible approach to produce an electron beam simi- lar to a HG is a Hilbert plate that induces a phase shift of π between the two halfs of a round aperture. One may also use a magnetic bar to this aim [21, 22]. In the following, we shall refer to such a phase shifter as a Hilbert device, inde- pendent of the principle used. Beams produced with such a device are henceforth called spherical Hilbert beams. The Guoy shift of HG beams in the mode converter can be calculated analytically with Eqn. 19. For spherical Hilbert beams we have to resort to wave optical simula- tions. To this aim we performed two independent simu- lations of an asymmetric QP π/2 setup for the horizontal and vertical components as suggested in Fig. 1. The mag- nification is the same as in Figs. 6&9 with ri = 357 nm, d = 120 mm and quadrupole focal lengths of fi = 80 mm and fo = 360 mm. The acceleration voltage is Ua = 200 kV. Figure 5: Solid: numerical Gouy shift for a split Hilbert beam (see Fig. 1) after a π/2 MC. The horizontal grid line marks the targeted phase shift of π/2. The shared dashed radial intensity profile is taken along the mirror axis. The propagated components were rotated so that their symmetry axis coincide. The difference in Guoy phase is traced in the direction of the aligned symmetry axis. The Guoy shift obtained in that way oscillates around the ideal value of π/2 that would be the outcome for an ideal HG in- put. The radial intensity profile shows that an acceptable average Guoy shift can be achieved at the most relevant radius. 3.3. Orbital angular momentum When expanding the wave function of the propagating beam ψ in a given plane into Lz eigenfunctions (cid:88) ψ(r, φ) = cm(r)eimφ, (20) m 4 the expectation value of the OAM can be calculated as (cid:104) Lz(cid:105) = (cid:104)ψ Lz ψ(cid:105) (cid:104)ψψ(cid:105) = ¯h m m(cid:82) cm(r)2 r dr (cid:80) (cid:82) cm(r)2 r dr (cid:80) m . (21) Figure 6 shows the phase structure before and after the sec- ond quadrupole for a HG0,1 and a Hilbert beam. The pa- rameters for the π/2 MC are identical to those in Figs. 5&9. Note that the phase structure has been compensated for Figure 6: Vortex beams produced by a π/2 MC. Isophasal lines are superimposed on the intensities and angular spectra immediately before (left) and after (right) QP2 in the same setup as in Fig. 5. Upper row: HG beam with width wo = 537 nm, Lower row: spherical Hilbert beam with radius ro = 759 nm. Scale bar: 500 nm. The dashed circle (r = 650 nm) marks the area selected for decomposition into azimuthal eigenmodes. the diverging curvature Eqn. 15. The remaining purely az- imuthal phase structure at the entrance to QP2 is visibly astigmatic for both beam profiles. Indeed, the decomposi- tion according to Eqn. 20 reveals a broadened distribution. After QP2 the astigmatism is corrected, and the m = 1 contribution increases. The HG0,1 beam is transformed into a clean m = 1 LG state. QP1 did already exert the full torque of (cid:104)m(cid:105) = 1, while QP2 establishes mode pu- rity. The Hilbert beam picks up angular momentum on QP1 and QP2 and does also acquire a total of (cid:104)m(cid:105) = 1, albeit with a slightly lower m = 1 mode purity. The mode purity may be further increased by another aperture, as the central region shows an ideal linear azimuthal phase spiral. 4. Numerical Simulations So far the setups for π/2 MCs were very much sim- plified. They were modeled by a composite input of an aperture, a Hilbert device, a lens and a QP followed by one single propagation step and a composite output of a lens and a QP. The analytic treatment of Gaussian beams passing through such stylized π/2 MCs as well as the very similar behavior of HG and Hilbert beams in test scenar- ios suggest that vortex generation is possible in an actual aberration corrected TEM. Numerical simulations on more realistic and complete setups are indispensable to confirm and possibly retune the parameters for real world electron optical designs. The obvious challenge of simulating an entire electron optical setup, is keeping track of multiple optical devices and propagation steps in between them. 4.1. Rescaled propagation In an extended optical system, like an entire TEM col- umn, different sections of the beam have very different lateral extend or magnification. One very efficient way to adapt the lateral scale to a propagating beam can be to re- place the combined action of a lens with focal length f and further propagation over a distance d with the combined action of a propagation over a distance d(cid:48), a lateral rescal- ing and a lens with focal length f(cid:48). So instead of propagat- ing forward to the imaging plane, the incident wavefront is propagated backwards to the object plane. Then the mag- nification of the imaging and a new lens with focal length f(cid:48) are applied. The transformed distance d does not need to be the full distance to the next lens or aperture. In fact it can be chosen freely, and the signs of the rescaled and remaining distance are arbitrary. With the introduction of s and s(cid:48) for the original and the re-scaled grid resolution, the transformations can be written as: 1 d − 1 1 d(cid:48) = f s(cid:48) = 1 − d s f f(cid:48) = f − d. (22) (23) (24) Sign changes in d are equivalent to propagating backwards. Sign changes in f and s trigger a mirror inversion and a phase shift of π. 4.2. Virtual microscope In this section, we present a detailed numerical study of the propagation behavior of HG and Hilbert beams through an ensemble of lenses and QPs. To this aim, we have developed a JAVA plugin for ImageJ. The graphi- cal user interface represents a fully editable virtual micro- scope. Different setups can be stored in human readable 5 and editable xml files which define among other parame- ters a unique order in which lenses, apertures and propaga- tion distances are applied to an initial plane wave. Wave- fronts of the propagated beam can be viewed as stacks of images. Numerically, lenses L, apertures, quadrupoles QP and other devices are represented as a complex map for the real and the imaginary part of their action, respectively. L(f, x, y) = exp QP(f, x, y) = exp (cid:20) i ·(cid:0)x2 + y2(cid:1) · k (cid:20) i ·(cid:0)x2 − y2(cid:1) · k 2 · f (cid:21) (cid:21) 2 · f The simulation starts with a plane wave with phase 0 at z = 0. At every plane, the current cross section ψz is multiplied with the complex sheets at this plane. This step can account for arbitrary apertures, gratings, Hilbert devices, wavefront deformations by lenses and multipoles. It can also define for instance a Hermite Gaussian. Then the wavefront is propagated through free space to the next plane. The propagation over a distance d from ψz to ψz+d can be individually configured to be carried out in cus- tomizable steps. We always employ the par-axial approxi- mation, since lateral dimensions are µm and relevant dis- tances are at least mm. Each step can be propagated in frequency or spatial domain. (25) (26) (27) ψz+d = FT −1 (P(d) · FT (ψz)) ψz(x(cid:48), y(cid:48)) · ψz+d(x, y) = −i · x(cid:48),y(cid:48) (x − x(cid:48))2 + (y − y(cid:48))2 (cid:21) (cid:20) · exp dx(cid:48)dy(cid:48) (cid:90) (cid:20) i 2 · d (28) FT denotes Fourier transformation and the propagator P in Eqn. 27 is defined in frequency range x, y P(d, x, y) = exp i · (x2 + y2) · d 2 · k (29) (cid:21) Propagation steps in spatial domain (Eqn. 28) may also contain a custom zoom between the planes at z and z + d. The custom splitting and scaling and per step choice between spatial and frequency domain are found to be ver- satile in circumventing the need for excessive oversizing or oversampling of the complex sheets and wavefronts. All simulations could be carried out on a grid of 512x512 pixels with dynamic resolution. The phase information is consis- tent with the Guoy shift, but there is an arbitrary global phase factor for different planes. The first test case for the virtual microscope is the symmetric cylinder lens setup. Figure 7 illustrates the propagation of the phase colored wavefronts through a ba- sic symmetric π/2 MC setup. The incoming rotated HG1,0 (Ua = 200kV) has a width wi = 367 nm. The round lenses with fL = 409.7 mm are on the inside but share the same plane with the cylinder lenses with fc = 84.9 mm which are 120 mm apart. In this ordering the effects of the first and Hilbert beam demag QP1 QP2 mag condenser objective focus (cid:31)10 µm (cid:31)0.7 µm (cid:31)2.4 µm (cid:31)1.5 µm (cid:31)2.6 µm Figure 8: Complete optical setup for vortex generation. This setup is used in Fig. 9. Lenses (purple) and quadrupoles (red/blue) focus an incoming Hilbert beam. Black and gray dots mark real images, the red/blue dot mark the real/virtual astigmatic line focus of the first quadrupole. The given diameters (cid:31) are according to geometric optics. Figure 7: Propagation of an incident rotated HG0,1 with width w = 367 nm and Ua = 200 kV through cylinder lenses with f = 84.9 mm and round lenses with f = 409.7 mm. The last frame is a Laguerre Gaussian (LG) with the same w. The scalebar is 500 nm. The wavefront is shown for every 10 mm. second cylinder lens are not obscured by the isotropic cur- vature. The first cylinder lens introduces horizontal bands and a vertical phase curvature. The following intermedi- ate wave fronts visualize the continuous mode conversion. And finally the second cylinder transforms the asymmet- ric phase pattern after the second lens into the exact LG pattern for m = 1. 4.3. Spherical waves and multi-scale simulation Moving towards a more realistic virtual setup neces- sitates to include round apertures and spherical waves as well as the condenser and the objective lens systems. The full asymmetric π/2 MC setup is sketched in Fig. 8. The Hilbert device is assumed to be mounted in the con- denser system and has a diameter of 10 µm. The black dots mark actual images. The lens labeled "demag" would form another image (gray dot) at the principal plane of the second QP (QP2). The first QP (QP1) introduces astig- matism and forms one real line focus (red dot). The cor- responding perpendicular line focus is virtual (blue dot). After the second QP (QP2) the beam is mode matched and appears as if emanating from an image (gray dot) in the principal plane of QP1. It is refocused in another real image in front of the condenser/objective system. The last black dot is in the focus of the objective. The full wave optical simulation for the extended asym- metric π/2 MC setup in Fig. 8 is shown in Fig. 9. The sim- ulation takes advantage of variable resolution on a fixed size grid. It starts from a Hilbert device in an aperture with a diameter of 10 µm. A 1 µm wide magnetic bar induces a phaseshift of π between the two sides. Similar devices have been demonstrated [21, 22]. At the exit of the lens "demag" the wavefront is demagnified and rather reminiscent of a HG beam. The demagnification at QP1 is 14.0 fold and the center of the converging curvature Figure 9: Propagation from a Hilbert device in the condenser to a STEM probe with orbital angular momentum ±¯h. Captions are explained in the text. The hue coloring is identical to Fig. 7 is at QP2 (Eqn. 15). The distance d between the QPs is 120 mm. The quadrupoles are excited asymmetrically with fi = 80 mm and fo = 360 mm to match the incom- ing width (Eqn. 18) and to provide the correct Guoy shift (Eqn. 16). The output of the π/2 MC is clearly a vor- tex beam and the spiraling phase pattern has a diverging curvature centered at QP1. The magnification inside the π/2 MC is wo/wi = 2.12. The next frames are before the "mag" lens and after the condenser. The magnified beam is focused by the objective lens to form a donut shaped STEM probe. Changing the helicity of the STEM probe is as straight forward and reproducible as rotating the QPs by 90◦, which is an crucial aspect for measuring dichroism [23]. Notably the central bar in the Hilbert device and its diffractive blurring upon propagation to the first QP con- tribute to the resemblance of a HG1,0 beam. Except for the magnification the cross sections from the interior of the π/2 MC closely resemble the internal cross sections shown in Fig. 7. The differences in the spiraling phase pattern before (120 mm) and after QP2 might seem subtle in direct phase coloring, but they are the same as in the isophasal representation shown in Fig. 6. The second QP 6 Significantly smaller probe diameters could be envisaged in dedicated setups with intermediate magnification stages and additional apertures. Acknowledgements CK & PS acknowledge financial support of the Aus- trian Science Fund (FWF): P29687-N36. TS acknowledges financial support of the Austrian Academy of Sciences: DOC-scholarship. References [1] R. Juchtmans, A. B´ech´e, A. Abakumov, M. Batuk, J. Verbeeck, Using electron vortex beams to determine chirality of crystals in transmission electron microscopy, Physical Review B 91 (2015) 094112. doi:10.1103/PhysRevB.91.094112. [2] R. Juchtmans, J. Verbeeck, Orbital angular momentum in elec- tron diffraction and its use to determine chiral crystal sym- metries, Physical Review B 92 (2015) 134108. doi:10.1103/ PhysRevB.92.134108. [3] J. C. Idrobo, J. Rusz, J. Spiegelberg, M. A. McGuire, C. T. Symons, R. R. Vatsavai, C. Cantoni, A. R. Lupini, Detecting magnetic ordering with atomic size electron probes, Advanced Structural and Chemical Imaging 2 (1) (2016) 5. doi:10.1186/ s40679-016-0019-9. [4] K. Y. Bliokh, I. P. Ivanov, G. Guzzinati, L. Clark, R. Van Boxem, A. Beche, R. Juchtmans, M. A. Alonso, P. Schattschneider, F. Nori, J. 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Van Boxem, J. Verbeeck, Exploiting lens aberrations to create electron-vortex beams, Physical Review Letters 111 (6) (2013) 064801. doi:10.1103/PhysRevLett.111.064801. 7 Figure 10: Isophasal contours and angular mode distribution of the same STEM probe as in Fig. 9. The scalebar is 1 nm. The upper spectrum is for the beam inside the smaller circle (r = 0.55 nm) and the lower spectrum is for the beam inside the bigger circle (r = 0.85 nm) is crucial for canceling the astigmatism introduced by QP1 and hence stabilizing the vortex state. The donut profile is then magnified and focused by the objective lens. This is very well demonstrated by the collection of vortex profiles at various magnifications in Fig. 9. The resulting STEM probe is shown in more detail in Fig. 10. Its azimuthal spectra show a very similar mode distribution for the two selected different radii. More im- portantly, both spectra clearly show that the vortex beam is stable and can be projected all the way from the second QP to the focus of the objective lens. We assumed realistic distances and respected minimum focal lengths for the simulation in Fig. 9. So the predicted donut diameter of ∼ 1 nm at ∼2 mrad should be achiev- able in existing electron microscopes. We confirmed nu- merically that the effects of spherical aberrations Cs with a typical value of a few mm and a finite source size of 50 nm are not detrimental to the predicted donut probe. 5. Conclusion We have explored the realm of possible designs for π/2 MCs in electron optics based on reconfiguring well estab- lished and relatively wide spread probe correctors. Us- ing already existing quadrupoles is an appealing aspect, because there is no need for mechanical modifications of the TEM column and helicity switching would be straight forward. The most relevant parameters are the distance between the two quadrupoles d, the possible excitations of the quadrupoles or minimal fi and fo, as well as the incident virtual aperture size. Allowing for asymmetry in the quadrupole excitations introduces a magnification or de-magnification and leads to an effective decoupling of the constraints on achieving isotropic width and curvature as well as π/2 mode conversion at the exit plane. We propose that a π/2 MC can be used to generate a very pure, and switchable m = ±1 vortex beam. The design of the Hilbert device we have considered here numerically is minimalistic, and there are conceivable aperture designs that could mimic a HG0,1 input beam even more closely. [14] A. Beche, R. Van Boxem, G. Van Tendeloo, J. Verbeeck, Mag- netic monopole field exposed by electrons, Nature Physics 10 (1) (2014) 26 -- 29. doi:10.1038/NPHYS2816. [15] A. H. Tavabi, M. Beleggia, V. Migunov, A. Savenko, O. Ok- tem, R. E. Dunin-Borkowski, G. Pozzi, Tunable ampere phase plate for low dose imaging of biomolecular complexes, Scientific Reports 8 (2018) 5592. doi:10.1038/s41598-018-23100-3. [16] M. Beijersbergen, l. Allen, H. Vanderveen, J. Woerdman, Astig- matic Laser Mode Converters and Transfer of Orbital Angular- momentum, Optics Communications 96 (1-3) (1993) 123 -- 132. doi:10.1016/0030-4018(93)90535-D. [17] P. Schattschneider, M. Stoeger-Pollach, J. Verbeeck, Novel Vor- tex Generator and Mode Converter for Electron Beams, Phys- ical Review Letters 109 (8) (2012) 084801. doi:10.1103/ PhysRevLett.109.084801. [18] V. Grillo, A. H. Tavabi, F. Venturi, H. Larocque, R. Bal- boni, G. C. Gazzadi, S. Frabboni, P. H. Lu, E. Mafakheri, F. Bouchard, R. E. Dunin-Borkowski, R. W. Boyd, M. P. J. Lavery, M. J. Padgett, E. Karimi, Measuring the orbital angu- lar momentum spectrum of an electron beam, Nature Commu- nications 8 (2017) 15536. doi:10.1038/ncomms15536. [19] J. Verbeeck, A. Beche, K. Muller-Caspary, G. Guzzinati, M. A. Luong, M. Den Hertog, Demonstration of a 2 x 2 programmable phase plate for electrons, Ultramicroscopy 190 (2018) 58 -- 65. doi:10.1016/j.ultramic.2018.03.017. [20] M. Born, E. Wolf, A. B. Bhatia, P. C. Clemmow, D. Gabor, A. R. Stokes, A. M. Taylor, P. A. Wayman, W. L. Wilcock, Principles of Optics: Electromagnetic Theory of Propagation, Interference and Diffraction of Light, 7th Edition, Cambridge University Press, 1999. doi:10.1017/CBO9781139644181. [21] T. Tanji, H. Niimi, J. Usukura, Y. Yamamoto, S. Ohta, Electron differential phase microscopy with an a-b effect phase plate, Microscopy and Microanalysis 21 (S3) (2015) 1945 -- 1946. doi: 10.1017/S1431927615010508. [22] G. Guzzinati, A. Beche, H. Lourenco-Martins, J. Martin, M. Kociak, J. Verbeeck, Probing the symmetry of the poten- tial of localized surface plasmon resonances with phase-shaped electron beams, Nature Communications 8 (2017) 14999. doi: 10.1038/ncomms14999. [23] P. 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1911.11340	1	1911	2019-11-26T05:02:53	One-directional thermal transport in densely aligned single-wall carbon nanotube films	[ "physics.app-ph" ]	Individual carbon nanotubes (CNTs) possess extremely high thermal conductivities. However, the thermal conductivities and their anisotropy of macroscopic assemblies of CNTs have so far remained small. Here, we report results of directional thermal transport measurements on a nearly-perfectly aligned CNT film fabricated via controlled vacuum filtration. We found the thermal conductivity to be 43 +- 2.2 W m^-1 K^-1 with a record-high thermal anisotropy of 500. From the temperature dependence of the thermal conductivity and its agreement with the atomistic phonon transport calculation, we conclude that the effect of intertube thermal resistance on heat conduction in the alignment direction is negligible because of the large contact area between CNTs. These observations thus represent ideal unidirectional thermal transport, i.e., the thermal conductivity of the film is determined solely by that of individual CNTs.	physics.app-ph	physics	One-directional thermal transport in densely aligned single-wall carbon nanotube films Shingi Yamaguchi1, Issei Tsunekawa1, Natsumi Komatsu2, Weilu Gao2, Takuma Shiga1, Takashi Kodama1, Junichiro Kono2,3,4,#, Junichiro Shiomi1* 1. Department of Mechanical Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 2. Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, U.S.A. 3. Department of Physics and Astronomy, Rice University, Houston, Texas 77005, U.S.A. 4. Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, U.S.A. #[email protected], [email protected] 1 ABSTRACT: Individual carbon nanotubes (CNTs) possess extremely high thermal conductivities. However, the thermal conductivities and their anisotropy of macroscopic assemblies of CNTs have so far remained small. Here, we report results of directional thermal transport measurements on a nearly-perfectly aligned CNT film fabricated via controlled vacuum filtration. We found the thermal conductivity to be 43 ± 2.2 W m-1 K-1 with a record-high thermal anisotropy of 500. From the temperature dependence of the thermal conductivity and its agreement with the atomistic phonon transport calculation, we conclude that the effect of intertube thermal resistance on heat conduction in the alignment direction is negligible because of the large contact area between CNTs. These observations thus represent ideal unidirectional thermal transport, i.e., the thermal conductivity of the film is determined solely by that of individual CNTs. Thermal management in electronics is becoming more and more important as the degree of device miniaturization has reached a truly nanometer scale where the level of power dissipation is also extreme. Therefore, thermally conducting electronic nanomaterials are strongly required for more efficient heat dissipation. Carbon nanotubes (CNTs) are one of the most promising candidates, since individual CNTs have exhibited thermal conductivities ( ) over 103 W m-1 K-1 1 -- 5. There have also been many thermal conductivity studies of CNT assemblies. In particular, has been measured for aligned CNT samples prepared either by direct chemical vapor deposition growth6-16 or post-processing of synthesized CNTs, such as mechanical processing17 -- 22, direct spinning23, and magnetic alignment24 -- 26. However, the values reported for aligned CNT materials have so far been limited to tens to hundreds of W m-1 K-1, significantly lower than those for individual CNTs. This drastic difference has been attributed to structural issues such as low 2 volume fractions (0.5 ~ 50 %), high defect densities, and low degrees of alignment, which make the intertube thermal resistance limit the film thermal conductivity. Therefore, it is essential to eliminate these structural deficiencies to utilize the high of individual CNTs in aligned CNT assemblies. In addition to the general need for materials with high thermal conductivity, there is also a specific demand for materials with anisotropic thermal conductivity that can direct heat flow only in a certain direction. For example, when spreading the heat from a chip on a circuit board, such directional heat flow can prevent heat-sensitive components from being damaged by excess heat conducted from heat-generating parts27. CNTs are clearly a good candidate because of their uniquely one-dimensional structure. However, unexpectedly, the thermal anisotropy of aligned CNT assemblies has not exceeded 100 in previous reports6-9,16 -- 20,24,25. Here, we demonstrate a record-high value of thermal conductivity anisotropy in macroscopic films of aligned and packed CNTs prepared by the recently developed controlled vacuum filtration (CVF) method28,29. Using the T-type and time-domain thermoreflectance (TDTR) methods, we obtained a thermal anisotropy of 500 at room temperature (R.T.), which is the largest value obtained among all previously studied macroscopic CNT assemblies6-9,16 -- 20,24,25. Although the in the alignment direction ( ) is lower than the highest reported values6 -- 26, further theoretical analysis reveals that the is determined only by the of the constituent CNTs and is not limited by intertube thermal resistance. The CNT used in this study was unsorted arc-discharge CNT purchased from Carbon Solutions, Inc., and the highly aligned CNT films (Film 1) were prepared by the CVF method28. In addition, a poorly aligned CNT film (Film 2) and a randomly aligned CNT film (Film 3) were 3 also prepared for comparison. Film 2 was prepared by filtrating the CNT dispersion with additional 6 mM of NaCl at a filtration speed four times higher than that in the case of Film 1. These changes alter the interaction between the CNTs and the filter membrane28 and reduce the degree of alignment. Film 3 was prepared by filtration of a CNT dispersion without any additives or filtration control. for each sample was measured by the T-type method1,30 (Figure S1). The ~200-nm- thick Films 1 and 2 were supported by the polyethylene terephthalate (PET) substrates, and their were calculated by subtracting the thermal conductance of the PET substrate from the thermal conductance of the CNT/PET (CNT and PET). Film 3 was ~30 µm thick and measured as a self- standing film. The cross-plane ( ) of Film 1 was measured using TDTR31,32 after coating the surface with a ~100-nm-thick Al transducer film. The details of our TDTR setup are described elsewhere33. Top-view Scanning Electron Microscope (SEM) images of each sample are shown in Figure 1. Film 1 (Figure 1a) had uniformly aligned CNTs, as in previous reports28,29,34 -- 39. The alignment of Film 2 (Figure 1b and 1c) is much weaker. The focused SEM image in Figure 1b shows that the CNTs are oriented rather randomly but there are parts with higher density due to the local moderate alignment that gives rise to the different color contrast. This is more evident in the broad view (Figure 1c) where white lines indicate partial ordering in Film 2. The morphology of Film 3 (Figure 1d) was clearly different from that of the other two aligned samples; most CNTs existed as large bundles with a diameter of ~100 nm, and they formed a sparse network structure. The alignment degrees of Films 1 and 2 were evaluated by measuring the reduced linear dichroism (LDr) with a 660 nm laser beam38. LDr was 0.68 for Film 1 and 0.040 for Film 2, so the alignment degree of Film 2 was less than one tenth of that of Film 1 (Table 1). The non-zero LDr value of Film 2 is also consistent with the ordering of CNTs seen in Figure 1c. 4 ⊥ Figure 1. Scanning electron microscopy (SEM) images: (a) Film 1 (highly aligned film prepared by CVF method), (b) Film 2 (poorly aligned film prepared by CVF method with NaCl addition), (c) Film 2 with lower magnification than (b) and (d) Film 3 (randomly aligned film prepared by filtration of a CNT dispersion without any additives or filtration control.). Table 1. LDr and at R.T. of the three films studied. Film 1 (Highly aligned) Film 2 (Poorly aligned) Film 3 (Randomly aligned) LDr 0.68 0.040 0 43 ± 2.2 W m-1 K-1 28 ± 1.2 W m-1 K-1 14 ± 2.8 W m-1 K-1 0.085 ± 0.017 W m-1 K-1 - - 5 ⊥The measurements of the three films were conducted over a temperature range from 50 to 300 K. First, values of different samples at R.T. were compared to see any thermal property differences caused by the morphological differences, and are summarized in Table 1. The of Film 1 in the alignment direction ( = 43 ± 2.2 W m-1 K-1) at R.T. was higher than those of Film 2 ( = 28 ± 1.2 W m-1 K-1) and Film 3 ( = 14 ± 2.8 W m-1 K-1). On the other hand, the of Film 1 in the perpendicular direction ( ) was as low as 0.085 ± 0.017 W m-1 K-1, which is three orders of magnitude smaller than . This reveals that Film 1 had an extremely large thermal anisotropy ( ) of 500, which is the largest reported value among aligned CNT films6-9,16 -- 20,24,25. The highest and second-highest value of and show the improvement of the film by the constituent CNT alignment, and the details of which will be discussed later. While the randamly aligned Film 3 showed lowest , its structure seen in Fig.1d contains seemingly aggregated CNT chunks. Therefore, it is difficult to separate the effect of aggregation from that of alignment. Therefore, the case of Film 3 is shown only to compare the absolute thermal conductivity value of conventional CNT mat with those of the aligned ones, and thus, the detailed heat conduction mechanism in Film 3 will not be discussed in this paper. It is known that the of CNT bundles are lower than those of individual CNTs due to the quenching of low-frequency phonon modes and small thermal conductance between CNTs5,19,41,42. However, despite the nearly perfect CNT alignment in Film 1, its value at R.T. is still one order of magnitude smaller than the reported of a single CNT bundle ( )41 -- 43. To understand the reason, the temperature dependence of was examined in detail. First, the temperature dependence of was compared with that of measured in Ref. 43. As shown 6 ,1,2,3,1⊥,1,1,1/⊥,1,2,1,bundle,1,1,bundlein Figure 2, the profiles normalized by the R.T. value show good agreement. In Ref. 43, CNT- CNT contact thermal resistance had negligible effects on because both the bundle itself and the constituent CNTs were 1 µm long; namely, all the CNTs seamlessly connected the two thermostats that suspended the bundle. Therefore, considering that the internal thermal conductance grows linearly with temperature4 and the intertube thermal conductance depends weakly on temperature40,43 in the range from 150 to 300 K, the agreement in temperature dependence between and suggests that the intertube thermal resistance has a limited effect on . Figure 2. Temperature dependence of thermal conductivity. : Film 1 (alignment direction), : single CNT bundle43, : Film 2 (alignment direction), solid line: simulated effective thermal conductivity of highly aligned CNT film. The values of thermal conductivity are normalized by the R.T. value for each material. 7 ,bundle,1,bundle,1•Table 2. List of the variables used in the calculation and their details. Variable Explanation G Internal thermal conductance of a CNT in the axial direction Source AGF calculation G⊥ Internal thermal conductance of a CNT in the perpendicular direction - g Intertube thermal conductance at an aligned CNT-CNT contact Actual value of the intertube thermal conductance at R.T. AGF calculation Model in Fig.4b Intertube thermal conductance at a CNT-CNT cross contact Ref. 40,56 The effective value of The effective value of of each CNT constituting the Film 1 of CNT bundle Model in Fig.4a Model in Fig.4c - Ref. 43 gexp g' To further verify this suggestion, the internal thermal conductance of a CNT in the axial direction (G) and intertube thermal conductance at an aligned CNT-CNT contact (g) were calculated using the atomistic Green's function (AGF) method45. The variables used for the models and calculations below are summarized in Table 2. Note that since the CNT length is shorter than the average phonon mean free path46 -- 48, the phonon transport can be considered ballistic. As the average diameter (d) of consisting CNT of Film 1 is ~1.4 nm, a hexagonal unit cell consisting of (10,10) single-wall CNTs (d=1.36 nm) was used as a representative atomic scale model for the calculations. While Film 1 contains both metallic and semiconducting CNTs, the calculation result with metallic (10,10) CNTs is valid for the comparison because heat transport in CNTs is dominated by phonons than by electrons49,50. As shown in Figure S2a and S2b, the prepared cells for the alignment and perpendicular directions, respectively, were repeated twice in the section 8 ,1,eff,1,2,eff,2kind,bundlebetween the two leads. Periodic boundary conditions were applied in the directions of the cross section (Figure S3c and S3d). The interatomic interactions within and between CNTs were modeled by the Tersoff51 and Lennard-Jones potentials52, respectively; the potential parameters are described in the references. The effective value of ( ) was estimated by the following equation based on a model shown in Figure 4a: Here, L, A, and S represent the length, bottom area, and side area of a constituent CNT when CNTs are viewed as a honeycomb structure. The intertube term ( ) includes the area ratio as G and g both correspond to the thermal conductance per unit area while the cross-sectional areas of heat conduction through CNTs and between CNTs are different. The temperature dependence of the calculated is plotted in Figure 2, which agrees well with the experimental results. Here, the intertube term is around three orders of magnitude smaller than the internal term ( ), indicating that the temperature dependence of reflects only that of internal thermal conductance. Therefore, from Eq. (1), can be approximated as . This equation can be further transformed to 9 ,1,1,eff,1,eff11(1)LAGgS=+1AgSAS,1,eff1G,1,eff,1,eff,1,eff(2)LG=where represents of each CNT constituting the Film 1. This shows that, when phonon transport is ballistic (i.e., G is constant), is determined only by the length of the constituent CNTs, or in other words, only by . This explains the small observed (=43 W m-1 K-1); it is merely because the of constituent CNTs are small due to their shorter length (around 200 nm) than those in the bundle in Ref. 43 (around 1 µm, giving = 200.2 W m-1 K-1), not because of the intertube thermal resistance. Note that it makes sense that the five-fold difference in the length results in the five-fold difference in as thermal conductivity increases linearly with the length when heat conduction is ballistic53. Figure 3. : Normalized thermal conductivity of Film 1 in the perpendicular direction in the temperature range of 77 to 300 K, solid line: normalized simulated thermal conductance of highly aligned CNT in the perpendicular direction. 10 kind,1,effkind,1kind,bundle Figure 4. (a) Simulation models to estimate the effective thermal conductivity of Film 1 in the alignment direction. L, A and S represent length, bottom area and side area of a constituent CNTs. G represents thermal conductance of internal CNT and g and g' represent intertube thermal conductance at parallel/cross contact, respectively. (b) Simulation model for the calculation of intertube thermal resistance at CNT-CNT contact. (c) Simulation models to estimate the effective thermal conductivity of Film 2. On the other hand, the intertube thermal resistance dominates the thermal conductivity of Film 1 in the cross-plane direction ( ). This can be confirmed by the good agreement in the temperature dependences of experimentally measured and calculated g (Figure 3). Here, a quadratic increase at low temperatures and weak dependence at higher temperatures are observed, which is consistent with the temperature dependence of experimentally observed intertube thermal conductance between two CNTs44. Furthermore, the actual value of the intertube thermal conductance (gexp) at R.T. was estimated from the experimental result ( ) using a simple model 11 ,1⊥,1⊥,1⊥shown in Figure 4b. In the calculation, the internal thermal conductance of a CNT in the perpendicular direction (G⊥) was assumed to be much greater than gexp. Based on the model, gexp was calculated to be 1.5×10-8 m2 K W-1, which is close to g (1.1×10-8 m2 K W-1) and the other reported values calculated by molecular dynamics (MD) simulations54 -- 56. This confirms that is mainly determined by the intertube thermal resistance. It is also worth noting that the temperature dependence of is different from that of (Figure 2). increases sharply in the low temperature regime, while it becomes almost constant above 180 K. It is tempting here to discuss the result in terms of the peak temperature shift as the peak temperature of CNT materials is known to appear between 300 to 400 K, resulting from the competition between the increase in heat capacity and decrease in the phonon mean free paths due to Umklapp scattering with increasing temperature. However, as the constituent CNT material of Film 2 is exactly the same as that of Film 1, it is unlikely that their Umklapp scattering rates or the heat capacities significantly differ. Instead, this temperature dependence of can be explained by the stronger role of intertube thermal resistance at CNT-CNT cross contacts in Film 2 as shown in the simple model (Figure 4c). With this model, the effective of Film 2 ( ) can be estimated by the following equation: . Here, g' represents intertube thermal conductance at a CNT-CNT cross contact. Since the contact area is as small as the bottom area of CNT, the area ratio is not included in Eq. (4). According 12 ,1⊥,2,1,2,2,2,effASto the several reports clarifying the actual value of g' from simulations, it generally ranges from 108 to 109 W K-1 m-2 40,56, which is one to two orders of magnitude smaller than G (1010 W K-1 m- 2 @ R.T.). Therefore, in contrast to the case of , the intertube term is dominant in Eq. (4), and the temperature dependence of is expected to follow that of g'. The temperature dependence of g' has been investigated by both simulations57 and experiments44, where g' showed a quadratic increase at low temperatures while the temperature dependence became very weak above 150 K, which is consistent with the behavior of shown in Figure 2. This indicates that the difference in temperature dependence between and arises from the difference in leading mechanism of thermal resistance. In conclusion, the of a highly aligned CNT film synthesized by the CVF method was measured both in the alignment direction and perpendicular direction. The value at R.T. was 43 ± 2.2 W m-1 K-1 and 0.085 ± 0.017 W m-1 K-1 in the alignment and perpendicular directions, respectively, yielding a thermal anisotropy of 500, the highest ever reported. Further analysis of the temperature dependence of revealed that the effect of intertube thermal resistance, which is known to be large in pervious CNT films with weaker alignment, has a negligible influence on the owing to the large intertube contact area realized by the nearly-perfect alignment, and is determined only by of the constituent CNT length. This also suggests that the can be even greater with longer constituent CNTs. SUPPLEMENTARY MATERIAL 13 ,1,eff1'g,2,eff,2,1,2See supplementary material for additional information regarding the synthesis method for CNT films, experimental setup, theoretical equation for thermal measurement, details for AGF calculation and absolute values of experiment/simulation data. ACKNOWLEDGMENT This research was supported by JSPS KAKENHI Grant Numbers 19H00744. N.K., W.G., and J.K. acknowledge support by the Basic Energy Science (BES) program of the U.S. Department of Energy through Grant No. DE-FG02-06ER46308 (for preparation of aligned carbon nanotube films), the U.S. National Science Foundation through Grant No. ECCS- 1708315 (for optical measurements), and the Robert A. Welch Foundation through Grant No. C- 1509 (for structural characterization measurements). We thank M. Ouchi (Iwase Group, Waseda University) for providing technical support with the processing of measurement sample with laser plotter and G. Timothy Noe II and Kevin Tian (Rice University) for proofreading the manuscript. REFERENCES 1 M. Fujii, X. Zhang, H. Xie, H. Ago, K. Takahashi, T. Ikuta, H. Abe, and T. Shimizu, Phys. Rev. Lett. 95, 065502 (2005). 2 E. Pop, D. Mann, Q. Wang, K. Goodson, and H. Dai, Nano Lett. 6, 96 (2006). 3 K. Yoshino, T. Kato, Y. Saito, J. Shitaba, T. Hanashima, K. Nagano, S. Chiashi, and Y. Homma, ACS Omega 3, 4352 (2018). 4 C. Yu, L. Shi, Z. 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Department of Physics and Astronomy, Rice University, Houston, Texas 77005, U.S.A. 4. Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, U.S.A. 20 Methods Materials: The highly aligned CNT films (Film 1) used in this study were prepared by the CVF method1. Arc-discharge CNTs purchased from Carbon Solutions, Inc. (P2-SWNT), were dispersed in surfactant solution. The dispersion was then vacuum filtered while the filtration speed was carefully controlled. In addition, a poorly aligned CNT film (Film 2) and a randomly aligned CNT film (Film 3) were also prepared for comparison. Film 2 was prepared by filtrating the CNT dispersion with additional 6 mM of NaCl at a filtration speed four times higher than that in the case of Film 1. Film 3 was prepared by filtration of a P2-SWNT dispersion without any additives or filtration control. Films 1 and 2 were transferred to either polyethylene terephthalate (PET) or Si substrates for thermal measurements by the T-type method or TDTR, respectively. The sample thickness was controlled to be ~200 nm on PET substrates and ~40 nm on Si substrates. Film 3 was ~30 µm thick and measured as a self-standing film. The alignment degrees of Films 1 and 2 were evaluated by measuring the reduced linear dichroism 2, where and are the parallel and perpendicular absorbance, respectively. The average length of the P2-SWNT was statistically calculated based on the AFM images of the dispersed CNTs1. Its standard deviation was calculated to be 184 nm. Thermal measurements: In-plane for each sample was measured by the T-type method3,4. Figure S1 shows our experimental setup. A platinum wire with a diameter of 10 µm was suspended between two electrodes (copper blocks), and the electrical potential between them was measured while a constant current was applied. The sample was suspended between the center of the wire and the heat sink (another copper block), and the measured values of potential with and without the 21 2()/()rLDAAAA⊥⊥=−+AA⊥sample were fitted with an analytical expression derived from our theoretical model to extract the in-plane of the sample. The analytical expression was obtained by solving the heat conduction equation where are the thermal conductivity, cross-sectional area, half length, and temperature coefficient of resistance (TCR) of the Pt wire, and are the electrical current, surrounding temperature and temperature of the wire at position x (the signs corresponding to the coordinate when the origin is at the center of the wire), and is the electrical resistance of the wire when . The boundary conditions we impose are where are the thermal conductivity, cross-sectional area, length, and half width of the sample, and is the temperature of sample at the contact with the wire. From the solution of Eq. (S1), we can obtain the average temperature of the wire . Then the average electrical resistance can be calculated using the TCR value  as 22 2mm0220m()'1(())0(S1)(')2dTxApTxTdxIRpL++−==mmm,,,AL0,,()lTTx0R0()TxT=sm0sss0mm0s()()()(S2)()()(S3)()()()'1(())(S4)dxdxddiTxTdxdiiTLTAdTdTiiiTTApTxTdxLdxdx+−+==−−=−=−=−++−sss,,,ALdsT()TxR The thermal measurements were conducted over the temperature range from 50 to 300 K. While there was a temperature distribution along the wire, the positional dependence of was ignored since had little temperature dependence in the measured temperature range (i.e., 50 -- 300 K, see Figure S3). The measurement of Film 3 was conducted by suspending the film directly. Films 1 and 2 needed to be supported by a substrate, for which we chose PET because of its low thermal conductivity. For Films 1 and 2, after measuring the in-plane of the CNT/PET (CNT and PET) sample, the thermal conductance of the CNT film (KCNT) was obtained by subtracting the thermal conductance of the PET substrate from the thermal conductance of the CNT/PET , and the in-plane was calculated from KCNT ( ). A thin PET film with a thickness of 12 µm was used to ensure a sufficiently large KCNT/KCNT/PET ratio and to maximize the measurement sensitivity. The dimensions of the samples such as the length and width were determined using an optical microscope, while the thicknesses of Films 1 and 2, which were on the order of 100 nm, were measured by atomic force microscopy. 23 ()()00ss0smssssmmmmmss(1(()))(1)21cos()sin(sin)22(S5)sin()cos()2'2'(,,1,,).RRTxTnqndmLLnRmLnqmLmLpAdLpmnqmLmdAAA=+−+−−+−+−+=−+−===−==mmPETCNTCNT/PETPETPETPET()AKKKl=−=PETCNTCNTPETlKA=The cross-plane of Film 1 was measured using the time domain thermoreflectance (TDTR)5,6, which is a well-established method that operates with pulsed laser and pump-and- probe techniques to characterize thermal transport of thin films and interfaces. The film was coated with a ~100-nm-thick Al transducer film. The details of our TDTR setup are described elsewhere7. The environment temperature was strictly controlled by Mercury iTC (Oxford Instruments) and the temperature fluctuation for each measurement was kept below 0.1 K to suppress deviation of the signal. Simulations: We used the atomic Green's function (AGF) method to calculate the thermal properties of a perfectly aligned CNT bundle both in the alignment direction and in the cross-sectional direction. Details of the AGF method are described in Reference 8. As the average diameter of consisting CNT is 1.4 nm, a hexagonal unit cell consisting of (10,10) single-wall CNTs (diameter=1.36 nm) was used as a representative atomic scale model for the calculations. As shown in Figure S3a and S3b, the prepared cells for the alignment and perpendicular directions, respectively, were repeated twice between the lead sections. Periodic boundary conditions were applied in the directions of the cross section (Figure S3c and S3d). The interatomic interactions within and between CNTs were modeled by the Tersoff9 and Lennard-Jones potentials10, respectively; the potential parameters are described in the references. The transport calculations by the AGF method assumed fully ballistic phonon transport. 24 Figure S1. Experimental setup of T-type method. Figure S2. Atomic scale model of bundled (10, 10) single-walled CNTs for the atomic Green's function (AGF) method calculation in the (a) aligned and (b) perpendicular direction. The unit cells are sandwiched by colored lead section. (c,d) The boundary condition applied in the directions of the cross section. 25 Figure S3. Temperature dependence of Pt measured by joule heating. Figure S4. Measured temperature dependence of thermal conductivity. : Film 1 (alignment direction), : Film 2 (alignment direction). 26 Figure S5. Temperature dependence of simulated effective thermal conductivity of Film 1. Figure S6. Measured thermal conductivity of Film 1 in the perpendicular direction in the temperature range of 77 to 300 K. 27 Figure S7. Simulated thermal conductance of Film 1 in the perpendicular direction in the temperature range of 10 to 300 K. References 1 X. He, W. Gao, L. Xie, B. Li, Q. Zhang, S. Lei, J.M. Robinson, E.H. Hroz, S.K. Doorn, W. Wang, R. Vajtai, P.M. Ajayan, W.W. Adams, R.H. Hauge, and J. Kono, Nat. Nanotechnol. 11, 633 (2016). 2 F. Katsutani, W. Gao, X. Li, Y. Ichinose, Y. Yomogida, K. Yanagi, and J. Kono, Phys. Rev. B 99, 1 (2019). 3 M. Fujii, X. Zhang, H. Xie, H. Ago, K. Takahashi, T. Ikuta, H. Abe, and T. Shimizu, Phys. Rev. Lett. 95, 065502 (2005). 28 4 C. Dames, S. Chen, C.T. Harris, J.Y. Huang, Z.F. Ren, M.S. Dresselhaus, and G. Chen, Rev. Sci. Instrum. 78, 104903 (2007). 5 A.J. Schmidt, X. Chen, and G. Chen, Rev. Sci. Instrum. 79, 114902 (2008). 6 J.P. Feser and D.G. Cahill, Rev. Sci. Instrum. 83, 104901 (2012). 7 T. Oyake, L. Feng, T. Shiga, M. Isogawa, Y. Nakamura, and J. Shiomi, Phys. Rev. Lett. 120, 45901 (2018). 8 T. Markussen, A.P. Jauho, and M. Brandbyge, Phys. Rev. B - Condens. Matter Mater. Phys. 79, 1 (2009). 9 L. Lindsay and D.A. Broido, Phys. Rev. B - Condens. Matter Mater. Phys. 81, 1 (2010). 10 O.N. Kalugin, V. V. Chaban, and O. V. Prezhdo, Carbon Nanotub. - Synth. Charact. Appl. 325 (2011). 29
1812.02063	1	1812	2018-12-05T15:55:15	Influence of symmetry breaking on Fano-like resonances in high Figure of Merit planar terahertz metafilms	[ "physics.app-ph" ]	It is well established that nearly all high-quality (Q) Fano-like resonances in terahertz (THz) metasurfaces broaden as asymmetry increases, resulting in a decline of Q-factor and an increase in the resonance intensity. Therefore, in order to determine the optimal design for applications in THz sensing, a Figure of Merit (FoM) is required. Previous studies have identified the asymmetry regimes at which the peak FoM occurs for various, specific unit cell geometries. However to date, there is no systematic comparison of the resulting FoMs for common and novel geometries. Here, a THz planar metafilm featuring split ring resonators with four distributed capacitive gaps is investigated to compare three unique methods of implementing asymmetry: (1) adjacent L-bracket translation, (2) capacitive gap translation and (3) increasing gap width. The results obtained find that by translating two gaps and increasing the bottom gap width of the unit cell, the high-Q Fano-like resonances are $6 \times$ higher than the FoM for the fundamental dipole mode. This work further informs the design process for THz metasurfaces and as such will help to define their applications in photonics and sensing.	physics.app-ph	physics	Influence of symmetry breaking on Fano-like resonances in high Figure of Merit planar terahertz metafilms Joshua A. Burrow,1, a) Riad Yahiaoui,2 Wesley Sims,3 Zizwe Chase,2 Viet Tran,2 Andrew Sarangan,1 Jay Mathews,4 Willie S. Rockward,5 Imad Agha,1, 4 and Thomas A. Searles2, b) 1)Electro-Optics Department, University of Dayton, 300 College Park Ave., Dayton, OH, 45469, USA 2)Department of Physics & Astronomy, Howard University, 2355 6th St. NW, Washington, DC, 20059, USA 3)Department of Physics, Morehouse College, 830 Westview Dr. SW, Atlanta, GA 30314, USA 4)Physics Department, University of Dayton, 300 College Park Ave., Dayton, OH, 45469, USA 5)Department of Physics, Morgan State University, 1700 E. Cold Spring Ln., Baltimore, MD 21251, USA (Dated: 6 December 2018) It is well established that nearly all high-quality (Q) Fano-like resonances in terahertz (THz) metasurfaces broaden as asymmetry increases, resulting in a decline of Q-factor and an increase in the resonance intensity. Therefore, in order to determine the optimal design for applications in THz sensing, a Figure of Merit (FoM) is required. Previous studies have identified the asymmetry regimes at which the peak FoM occurs for various, specific unit cell geometries. However to date, there is no systematic comparison of the resulting FoMs for common and novel geometries. Here, a THz planar metafilm featuring split ring resonators with four distributed capacitive gaps is investigated to compare three unique methods of implementing asymmetry: (1) adjacent L-bracket translation, (2) capacitive gap translation and (3) increasing gap width. The results obtained find that by translating two gaps and increasing the bottom gap width of the unit cell, the high-Q Fano-like resonances are 6× higher than the FoM for the fundamental dipole mode. This work further informs the design process for THz metasurfaces and as such will help to define their applications in photonics and sensing. PACS numbers: 81.05.Xj, 78.67.Pt I. INTRODUCTION Metamaterials are sub-wavelength periodic unit cells engineered to exhibit effective macroscopic optical prop- erties that can be exploited for the alteration of elec- tromagnetic (EM) waves. The key attributes of meta- materials are (1) their properties are governed by their constituent material characteristics and geometry - not by chemical composition, and (2) their scalable EM re- sponse governed by the size of the sub-wavelength struc- tures. The seminal unit cell to be demonstrated as a suitable geometry for metamaterials is the split ring res- onator (SRR), introduced at the turn of the century to exhibit extraordinary spectral features unachievable by natural materials1 -- 3. Since the experimental verification of the SSR as a "building block" for metamaterials, many unit cell designs have been explored by implementing sub- tle structural variations into the SRR such as weak asymmetry4, relative super-cell adjustments5,6, and nested resonators7,8. One such variation, the symmet- ric 4-gap square SSR geometries, exhibits polarization insensitive unit cells ideal for sensing applications with a)Electronic mail: [email protected] b)Electronic mail: [email protected] previous reports in the optical9, infrared10, microwave11 and THz12,13 regimes. Breaking the symmetry in the unit cells of pla- nar metamaterials enables access to different resonant modes, which cannot be excited in the symmetric configuration14. These resonant modes have been termed as dark, sub-radiant or trapped because they couple weakly to free space and require an external perturba- tion, such as symmetry-breaking of the resonator geom- etry, in order to be excited15 -- 19. Similarly, structural symmetry breaking also allows for the emergence of Fano- like resonances20 -- 22. The Fano spectral feature is usu- ally defined as a resonant scattering phenomenon that gives rise to an asymmetric lineshape due to the inter- ference between a broad spectral line and a narrow dis- crete resonance23 -- 25. Such a sharp resonance has been exploited for ultra-sensitive sensing and could lead to the design of narrow band THz emitters/detectors and highly selective filters. However, the high quality (Q)-factor of the Fano-like resonance is obtained at the expense of its intensity, which makes the Fano signature very challeng- ing to be measured with low resolution and low signal-to- noise ratio systems. Therefore, it is extremely important to excite high Q resonances with strong intensities and a Figure of Merit (FoM) can be studied to determine the optimal asymmetric parameter26. In this paper, we report a systematic comparison of the FoM for asymmetric line shaped resonances in asym- metric planar THz metamaterials designed from a parent 4-gap SSR exhibiting four fold symmetry. First, we intro- duce asymmetry through shifting pairs of metallic arms (Technique 1) such that we achieve near-neighboring in- teractions between meta-atoms similar to our recent in- vestigation of the 4-gap circle SSR27. Second, we incor- porate structural asymmetry by shifting the capacitive gaps (Technique 2) generating Fano-like resonances28. Last, we adapt a new method of asymmetry (gap widen- ing) to Technique 2 which doubles the FoM and increases the number of modes within a 300 GHz window. Nu- merical investigations and semi-analytical models are ap- plied to provide further insights on each asymmetric case which are in good agreement with the experimental ob- servations. The results of this work demonstrate an ef- fective process for the design of THz metasurfaces for sensing and modulation applications where multi-mode, high FoM characteristics are desirable. II. DESIGN, FABRICATION AND EXPERIMENTAL CHARACTERIZATION OF SYMMETRICAL METAFILM We begin by describing the geometric parameters, nu- merical simulations and experimental techniques for the symmetric metafilm [Fig. 1(k)]. The relevant geomet- ric parameters for the symmetric unit cell are the pe- riodicities Px = Py = 300 µm, total length and width of the metallic ring a = 250 µm and width of the ring w = 35 µm. Numerical calculations were carried out using the finite element method (FEM). In these calcula- tions, the metafilm was illuminated at normal incidence, under TE-polarization (E // y-axis) or TM-polarized ra- diation (E // x-axis). Periodic boundary conditions were applied in the numerical model in order to mimic a 2D in- finite structure. In simulations, the polyimide substrate was treated as a dielectric with ε = 3.3 + i0.0529,30 and the silver (Ag) was modeled as a lossy metal with a con- ductivity of 3.1 × 107 S/m to account for lower conduc- tivities commonly observed in actuality. Each metafilm was fabricated using standard optical lithography to deposit 100 nm of Ag with a 10 nm adhe- sive layer of chromium on commercially available 50.8 µm polyimide substrates. Transmission measurements were performed using linearly polarized collimated radiation from a continuous-wave (CW) THz spectrometer (Ter- aview CW Spectra 400). The high spectral resolution (100 MHz) is maintained by the precision of the temper- ature tuning of two near-IR diode lasers and not by a me- chanical delay stage as found in a conventional THz time- domain spectroscopy. The transmission spectrum from each sample was determined as T (ω) = PM (ω)/Psub(ω), where PM (ω) and Psub(ω) are the filtered THz power spectra of the planar metafilm and flexible substrate re- spectively. The simulated (solid black line) and measured (dashed black line) transmission spectra for the symmetric 4-gap metafilm are plotted in Fig. 1(a) and are in good agree- ment with each other. A fundamental resonant feature f0 ∼ 0.56 THz and a weakly pronounced higher order transmission dip f1 ∼ 0.75 THz are observed with simu- lated Q-factors Q0 = 5.94 and Q1 = 15.52, respectively. 2 FIG. 1. Evolution of the simulated (solid lines) and measured (dashed lines) transmission spectra for an y-polarized (a)-(e) and x-polarized incident THz wave (f)-(j). (k)-(o) Schematics of the SRR unit cells with various degrees of asymmetry. Here, the Q-factor is defined as Q = f0/∆f where f0 is the resonant frequency and ∆f is the full width at half maximum (FWHM) of each transmission dip. The pa- rameters were extracted from a least-squares fit to an asymmetric lineshape profile of the transmission spec- trum defined as T (f ) = A [Λ + (f − f0)/∆f ]2 1 + (f − f0)2 (1) where A is the amplitude, f0 is the resonant frequency, Λ yields the lineshape asymmetry parameter and ∆f is the full width half maximum (FWHM) of the mode4. Quality factor and resonance intensity (referred to as modulation depth (MD) herein and defined as the differ- ence between the maximum and minimum transmission amplitude of the resonance) are two important parame- ters used to characterize modes for photonics and sensing applications; therefore, we consider FoM calculations of each transmission dip as F oM = Q× M D26. Due to the four-fold rotational symmetry imposed by the geometry of the design, the metafilm has identical response for an incident TM-polarized radiation (i.e., E //x -axis) [see Fig. 1(f)]. III. TECHNIQUE 1: L-BRACKET SHIFTING ASYMMETRY The first methodology introduces asymmetry into the design by offsetting the right and left arms of the SRR a distance δy ranging between 0 µm - 80 µm along the y-axis, as shown in Figs. 1(l)-1(o), similar to our previ- ous work27. Wang et. al. disassociated a single arm of a circle SSR via translation which resulted in an ultra- high Fano-like mode31. In the case where E // y-axis, as δy increases, f0 and f1 red shift and the modulation depth of f0 remains relatively constant as f1 increases, depicted in Fig. 2(a). When E // x-axis, we observe the excitation a similar broad fundamental resonance and a weakly coupled higher order mode that both blue shift as a function of asymmetry as depicted in Figs. 1(f)-1(j). Both modes in this polarization case exhibit low FoMs and are in turn neglected in mode analysis. FIG. 2. (a) Modulation depth, (b) Q-factor and (c) Figure of merit (FoM) of f0, f1, and f2 as a function of asymmet- ric shift. (d)-(f) Surface current distributions of asymmetric structure (δy = 60 µm) at 0.55 THz, 0.71 THz and 0.85 THz, respectively With respect to the case where E // y-axis, the red- shifts of the two transmission dips, f0 and f1, to lower frequencies can be understood within an equivalent cir- cuit scheme. For example, SRRs at THz frequencies are analogous to micro-scale LC resonators where effective inductance arises from the loop formed by the SRR and the effective capacitance is built up within the gap region between the SRR arms. Altering the structural geometry of the resonators results in a change in the effective induc- tance (L) and effective capacitance (C). Therefore, the frequency of the transmission dip will also be changed. Offsetting the right and left arms of the SRRs results in an increase of the equivalent length of the resonators, which suggests an increase in the equivalent inductance involved in the LC resonance. Since the resonance fre- quency fLC is inversely proportional to the square root of the inductance (L) given by the following relation: fLC = 1/(2π LC), the spectral feature shifts to lower frequencies with increasing the equivalent inductance. √ Additionally, with increasing asymmetry, a high Q mode f2 emerges that increases in modulation depth. Interestingly, the excitation of f2 creates a transmission window similar to the results reported in the 4-gap circle SRR with the exception of the spectrally trapped mode f1 between the fundamental and higher order mode27. To better understand the origin of the resonances, we have plotted the surface current distributions at the fre- quency resonances f0, f1 and f2 for δ = 60 µm), as 3 shown in Figs. 2(d)-2(f). For the fundamental mode f0 = 0.55 THz, the surface currents mainly flow in the right and left arms of the SRR, where the currents ver- tically converge to the bottom gap and diverge from the top gap, thus suggesting a dipole-like resonant behavior [Fig. 3(a)]. For the higher order resonance frequencies f1 = 0.71 THz and f2 = 0.85 THz, the surface current flows are all with chaotic directions and with distinctive nodes, as shown in Figs. 2(b)-2(c). In this case, the top and bottom horizontal arms of the SRR show antiparallel surface current distributions, as well as the vertical right and left arms. As previously mentioned, since the MD is enhanced at the cost of Q factor, it is useful to explore the trade-off of the Q-factor [see Fig. 2(b)] and monotonically increas- ing modulation depth [see Fig. 2(a)]32. The FoMs for Method 1 is calculated and plotted in Fig. 2(c) for each transmission feature. Although the higher order reso- nance f2 exhibits a high Q-factor of 36.91 for δy = 40 µm the incident THz field is weakly coupled resulting in a MD = 12%, and further exhibiting a relatively low FoM when compared to other resonances. The maximal FoM value of 17.47 for δ = 60 µm is observed for δy = 60 µm where the SSR begins to couple to the neighboring unit cell of the metasurface. IV. TECHNIQUE 2: DUAL GAP TRANSLATION ASYMMETRY Beginning with a fully symmetric 4-gap SRR array, the second asymmetry can be generated by simultaneously right-shifting the top and bottom capacitive air gaps a distance δx in the range 14.5 - 72.5 µm, as shown in Fig. 3(a). This method of asymmetry has been extensively studied to exhibit an effective route to excite Fano-like resulting from the interference between a sharp resonance and a smooth continuum-like spectrum33. The simulated (solid lines) and measured (dashed lines) transmission spectra for increasing values of δx are shown in Figs. 3(d)-3(h). Despite of some deviation between the simula- tion and experimental results, which may be mainly due to imperfections in sample preparation, they are overall in quite good agreement with one another. One can clearly observe the excitation of two asym- metric line shaped modes at f1 = 0.43 THz and f2 = 0.65 THz, which represent Fano-like resonances with Q- factors of about 29.71 and 39.18, respectively. To under- stand the nature of the double Fano excitations, we have simulated in Figs. 3(b) and (c) the surface current dis- tributions when δx = 14.5 µm at f1 and f2, respectively. For the first sharp resonance at 0.43 THz, we observe anti-parallel currents in the right and left arms of the SRR. Anti-symmetric currents create fields that interfere destructively resulting in radiation suppression and low- loss light propagation. This particular resonance is sim- ilar in nature to the inductive capacitive (LC) resonance in a single-gap SSR, as the resonance results in current configuration that forms a closed loop, which gives rise to a magnetic dipole moment perpendicular to the MM plane. The surface currents at f2 = 0.65 THz flow in such a way that the unit cell of the structure can be ge- 4 FIG. 3. (a) Unit cell of the designed asymmetric SRR MM. (b)-(c) distributions of surface current at two corresponding resonance frequencies f1 = 0.43 THz and f2 = 0.65 THz when δx = 14.5 µm. (d)-(h) Evolution of the simulated (solid lines) and measured (doted lines) transmission spectra for different values of δx. (i) Measured FoM curves for f1 = 0.43 THz and f2 = 0.65 THz, respectively. ometrically regarded as the combination of an U-shaped resonator (USR) and a cut wire resonator (CWR). In this case, the resonance is due to a dipole-like parallel current distribution as seen in Fig. 3(c). Additionally, it can be seen that the intensity of f1 increases with increasing the degree of asymmetry (i.e. increasing δx) with a modula- tion depth of about 40% for δx = 14.5 µm and around 75% for δx = 72.5 µm. Similarly, for f2 the modulation depth increases as δx increases. The degree of asymmetry is an important parameter controlling the electromagnetic resonant frequency and transmitted intensity34. According to Figs. 3(d)-3(h), one can observe that the degree of asymmetry also af- fects the line-width and thus the Q-factor of the Fano resonances. In the case of lowest degree of asymmetry (i.e. δx= 72.5 µm), the high Q-factor asymmetric Fano resonance f2 in the SRR arises from the structural asym- metry which leads to interference between sharp discrete resonance and a much broader continuum-like spectrum of dipole resonance f0. This narrow resonance arises from a sub-radiant dark mode for which the radiation losses are attenuated due to the weak coupling of the structure to free space4. Such dark modes are exploited to demon- strate EIT-like effects in MMs, which could opens up avenues for designing slow light devices with large group index35. The resulting close proximity between the fun- damental and high frequency resonances creates a strong coupling effect that reshapes the transmission curves as shown in Figs. 3(d)-(h). The Fano-like resonance mode located at f1, however, is far ahead from the broad dipole mode, therefore, coupling with f0 will not take place. Upon increasing the asymmetry, the dipole resonance f2 broadens and increases in intensity (decreases in trans- mission amplitude), since the SRR metafilm couples more efficiently to the free space and becomes highly radiative. Interestingly, the fundamental broad dipole-like resonant mode that initially appears at f0 gradually decreases in intensity and is completely suppressed in the highest de- gree of asymmetry (i.e., δx = 72.5 µm), thus completing a switching between single-mode f0 and dual-mode op- erations f1 and f2. This may paves the way towards the development of reconfigurable photonics devices based on symmetry-breaking planar THz MMs. For an intermedi- ate value of δx = 29 µm, one can observe a narrow trans- parency window at 0.62 THz, with an amplitude as high as 72% between two quasi-symmetric resonance dips at around f0 = 0.58 THz and f2 = 0.66 THz, respectively, which is very similar to an electromagnetically induced transparency (EIT) signature [see Fig. 3(e)]. Here again, since the Fano resonance intensity is en- hanced at the expense of the Q-factor, it is crucial to ex- plore the trade-off between the resonance intensity and the Q-factor by calculating the FoM. Figure 3(i) shows the calculated FoM for both Fano-like modes f1, and f2. As we can see, the best numerical FoM of 10.17 with Fano resonance intensity (modulation depth MD) of 0.49 and Q-factor of 20.59 is obtained for f1, at which the asymmetry parameter δx = 29 µm. V. TECHNIQUE 3: INCREASING CAPACITIVE GAP VOLUME In order to increase the number of resonances and FoMs stemming from the optimal design in the previous case, let us consider the asymmetric structure investi- gated in Fig. 3(a) with an intermediate value of δx = 29 µm, where multiple modes with high intensity are ob- tained [see Fig. 3(e)]. By modifying the width of the bottom capacitive gap w2 (w1 is kept unchanged as well as the other geometrical parameters), another asymme- try will be created, as shown in Fig. 4(a). Figure 4(d) show the simulated, analytically modeled and measured transmission spectra through the metasurface for differ- 5 FIG. 4. (a) Schematic view of the designed wide gap asymmetric metasurface with δx = 29 µm, w1 = 35 µm and w2 varying in the range 70 µm - 122 µm. (b) Surface current distribution in a single MM unit cell at f3 = 0.7 THz, when δx = 29 µm, w1 = 35 µm and w2 = 100 µm. (c) Circuit model for metafilm samples. (d) Simulated, analytical and measured transmission spectra for δx = 29 µm, w1 = 35 µm and w2 varying in the range 70 µm - 122 µm. (e) Simulated FoM curves for f0, f1, f2 and f3, respectively. ent values of w2 with fairly good agreement. As can be seen, an additional Fano resonance emerges at f3 = 0.7 THz. The surface current flows at 0.7 THz are all with chaotic directions and with distinctive nodes, as shown in Fig. 4(b). √ By gradually increasing the width of the bottom ca- pacitive gap w2, one can observe a blueshift of the trans- mission spectrum in both simulations and measurements. This noticeable blueshift of the spectral features can be interpreted in the context of an equivalent circuit model. In general, the fundamental resonance frequency of SRRs-based metasurfaces is approximately given by f0 = 1/(2π LC), where L is the loop inductance and C is the gap capacitance. At resonance, the incident elec- tric field induces a large accumulation of surface charges in the metal strips forming the gaps, causing a strong electric field confinement in the capacitive gaps. When the structural geometry of the SRR MM is altered by increasing the width of w2, there is a decrease in the effective capacitance. As the resonance frequency is in- versely proportional to the capacitance, the resonance frequency shifts to higher frequencies with increasing the gap width. In order to confirm the resonant behavior of the 4-gap asymmetric SRR metasurface, we employ a semi-analytic transmission line (TL)-RLC model36. The circuit model of our design under the TL theory is shown in Fig. 4(c), which is represented by three RLC circuits in parallel combination and inductively coupled through mutual in- ductances M12 and M23, respectively. We assumed SRR as an equivalent RLC circuit where it is typically con- sidered that split gap corresponds to the capacitive part, the SRR loop corresponds to the inductive part and the internal reactance of SRR is represented by the resistance part. From the circuit model shown in Fig. 3(c), one can calculate the circuit impedance Zct(ω) as, Zct(ω) = Z1,2Z3 + ω2M 2 [Z1,2 + Z3 − 2jωM ] (2) where ω and M represent the angular frequency and the mutual inductance respectively. Z1,2 is the equiv- alent impedance due to the parallel combination of cir- cuits R1L1C1 and R2L2C2, respectively. Z3 corresponds to the impedance of circuit R3L3C3. These complex impedances can be written as Zi(ω) = Ri + j(ωLi − 1/ωCi), where i = 1, 2 and 3, respectively. The equiva- lent impedance Z1,2 is given by Z1,2(ω) = Z1Z2 + ω2M 2 1,2 [Z1 + Z2 − 2jωM1,2] . (3) One can note that the circuit impedance Zct does not include the impedance due to the dielectric substrate. In Fig. 4(c), Z0 and Zsub represent impedances of free √ space and polyimide substrate, respectively. The values of Z0 and Zsub are 377 Ω and 219.5 Ω (Z0/ r), where r is the relative dielectric constant of the polyimide film), respectively. The overall impedance Z(ω) of our design including the effect of Zct and Zsub in parallel combina- tion can be written as Zsub(Z1,2Z3 + ω2M 2) . Z(ω) = Zsub(Z1,2 + Z3 − 2jωM ) + (Z1,2Z3) + ω2M 2) (4) The normalized transmission amplitude, T (ω) of this transmission line-RLC circuit model is given by T (ω) = 2Z(ω) Z0 + Z(ω) . (5) g2 R1 L1 C1 R2 L2 C2 R3 L3 C3 R4 L4 C4 M1,2 M1,2,3 M1,2,3,4 6 (µm) (Ω) (pH) (fF) (Ω) (pH) (fF) (Ω) (pH) (fF) (Ω) (pH) (fF) (pH) -40 222 0.265 0.5 180 221 0.26 0.5 180 0.275 -40 221 0.255 0.5 180 0.267 -40 0.25 0.5 180 0.265 -45 221 221 0.25 0.5 180 -45 5 180 70 180 0.65 5 90 180 0.65 5 100 110 180 5 120 120 180 0.61 5 30 50 70 95 0.34 0.34 5 235 235 5 235 0.335 5 236 0.335 10 236 0.318 10 0.7 0.6 0.28 0.26 (pH) -10.5 -10.5 -10.5 -3 -2 (pH) -3 -3 -6 -8 -6 TABLE I. Circuit parameters for matching TL-RLC model to simulated data. Resistor values are given in Ohms, capacitor values in femtofarads, and inductor values and coupling coefficients in picohenries. We used equation (5) to calculate the transmission spectra and predict the resonant frequencies for specific values of R1, L1, C1, R2, L2, C2, R3, L3, C3, M1,2 and M , respectively, which are defined in Table 1. These values are obtained by fitting the transmission amplitude from the simulation using equation 4. One can notice that the calculated transmittance is in good agreement with the numerical simulations and experimental measurements. The overall performance of the proposed series of de- vices shows a superior behavior to earlier designs. This proposed method allows for the excitation of four dis- tinct modes over a 300 GHz window, which increases the potential for multi-spectral sensing applications. More importantly, the higher order modes exhibit high FoMs when compared to other methodologies, while exhibiting the Fano-like modes f1 and f2. VI. CONCLUSION To conclude, we have performed a resonance engi- neering investigation of uniquely designed asymmetric metafilm devices, both numerically and experimentally, that exhibit multiple sharp Fano-like resonances in the THz frequency regime. The double asymmetric case out performs cases 1 and 2 in terms on number of excited modes and largest observed FoM when δx = 29 µm and w2 = 122 µm. Additionally, the FoM for modes f2 and f3 exhibited a proportional relationship with asymmetry. A semi-theoretical circuit model was employed to explain the coupling between the incident THz field to the plas- monic modes of the structure. Numerical simulations al- low further interpretation of the experimental results ob- tained from a linearly polarized CW THz measurement system used to measure the transmission spectra of the proposed metadevices, which agree reasonably well. Our results are very promising suggesting optimized designs for THz driven switches, multi-spectral filters, and highly sensitive sensors. ACKNOWLEDGMENTS We would like to acknowledge support the NASA Ohio Space Grant (NNX15AL50H) and the Air Force Office of Scientific Research (FA9550-16-1-0346). This work was performed in part at the Center for Nanoscale Systems (CNS), a member of the National Nanotechnology Co- ordinated Infrastructure Network (NNCI), which is sup- ported by the National Science Foundation under NSF award no. 1541959. J. A. B. acknowledges support from the Air Force Research Laboratory. T. A. S. acknowl- edges support from the CNS Scholars Program and R. Y. acknowledges support from the W. M. Keck Founda- tion. 1J. B. Pendry, A. J. Holden, D. J. Robbins, and W. J. Stewart, IEEE Trans. Microw. Theory Techn. 47, 2075 (1999). 2D. R. Smith and N. Kroll, Phys. Rev. Lett. 85, 2933 (2000). 3R. Shelby, D. Smith, and S. Schultz, Science 292, 77 (2001). 4R. Singh, I. Al-Naib, M. Koch, and W. Zhang, Opt. Express 19, 6312 (2011). 5I. Al-Naib, Y. Yang, M. M. Dignam, W. Zhang, and R. Singh, Appl. Phys. Lett. 106 (2015). 6X. Zhang, Q. Li, W. Cao, R. S. Jianqiang Gu, Z. Tian, J. Han, and W. Zhang, IEEE J. Sel. Top. Quantum Electron. 19, 8400707 (2012). 7S. Hussain, J. 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1910.01003	1	1910	2019-10-02T15:07:18	Quantum efficiency enhancement of bialkali photocathodes by an atomically thin layer on substrates	[ "physics.app-ph", "cond-mat.mtrl-sci" ]	We report quantum efficiency (QE) enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers. The enhancement occurs in a reflection mode, when a 2D crystal is placed in between the photocathodes and optically reflective substrates. Specifically, the peak QE at 405 nm (3.1 eV) increases by a relative 10 percent, while the long wavelength response at 633 nm (2.0 eV) increases by a relative 36 percent on average and up to 80 percent at localized hot spot regions when photocathodes are deposited onto graphene coated stainless steel. There is a similar effect for photocathodes deposited on hexagonal boron nitride monolayer coatings using nickel substrates. The enhancement does not occur when reflective substrates are replaced with optically transparent sapphire. Optical transmission, X-ray diffraction (XRD) and X-ray fluorescence (XRF) revealed that thickness, crystal orientation, quality and elemental stoichiometry of photocathodes do not appreciably change due to 2D crystal coatings. These results suggest optical interactions are responsible for the QE enhancements when 2D crystal sublayers are present on reflective substrates, and provide a pathway toward a simple method of QE enhancement in semiconductor photocathodes by an atomically thin 2D crystal on substrates.	physics.app-ph	physics	Quantum efficiency enhancement of bialkali photocathodes by an atomically thin layer on substrates Hisato Yamaguchi*, Fangze Liu, Jeffrey DeFazio, Mengjia Gaowei, Lei Guo, Anna Alexander, Seong In Yoon, Chohee Hyun, Matthew Critchley, John Sinsheimer, Vitaly Pavlenko, Derek Strom, Kevin L. Jensen, Daniel Finkenstadt, Hyeon Suk Shin, Masahiro Yamamoto, John Smedley, Nathan A. Moody Dr. H.Y., Dr. F.L., Dr. A.A., Dr. V.P., Dr. J.Smedley, Dr. N.A.M. Los Alamos National Laboratory, P.O. Box 1663, Los Alamos, New Mexico 87545, U.S.A. E-mail: [email protected] Dr. J.D. Photonis Defense Inc., 1000 New Holland Ave., Lancaster, PA 17601, U.S.A. Dr. M.G., Dr. J.S. Brookhaven National Laboratory, P.O. Box 5000, Upton, New York 11973, U.S.A. Dr. L.G. Nagoya University, Furo, Chikusa, Nagoya, 464-8601, Japan Mr. S.I.Y., Ms. C.H., Prof. Dr. H.S.S. Department of Chemistry and Department of Energy Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea Mr. M.C., Prof. Dr. D.F. U.S. Naval Academy, Stop 9c, 572c Holloway Rd., Annapolis, MD 21402, U.S.A. Dr. D.S. Max Planck Institute for Physics, Föhringer Ring 6, D-80805 Munich, Germany Dr. K.L.J. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington DC 20375, U.S.A. Dr. M.Y. High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba, Ibaraki 305-0801, Japan Keywords: graphene, antimonide photocathode, bialkali, quantum efficiency enhancement, accelerator technology 1 Abstract We report quantum efficiency (QE) enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers. The enhancement occurs in a reflection mode, when a 2D crystal is placed in between the photocathodes and optically reflective substrates. Specifically, the peak QE at 405 nm (3.1 eV) increases by a relative 10 %, while the long wavelength response at 633 nm (2.0 eV) increases by a relative 36 % on average and up to 80 % at localized "hot spot" regions when photocathodes are deposited onto graphene coated stainless steel. There is a similar effect for photocathodes deposited on hexagonal boron nitride monolayer coatings using nickel substrates. The enhancement does not occur when reflective substrates are replaced with optically transparent sapphire. Optical transmission, X-ray diffraction (XRD) and X-ray fluorescence (XRF) revealed that thickness, crystal orientation, quality and elemental stoichiometry of photocathodes do not appreciably change due to 2D crystal coatings. These results suggest optical interactions are responsible for the QE enhancements when 2D crystal sublayers are present on reflective substrates, and provide a pathway toward a simple method of QE enhancement in semiconductor photocathodes by an atomically thin 2D crystal on substrates. 2 1. Introduction Besides the well-known application of imaging bones in human bodies, X-rays enable powerful and pervasive tools with countless uses throughout science and technology. They are used to answer many important materials related problems in our society, ranging from development of new medicines for curing cancers to development of high performance batteries for automobile industries, and the development of lightweight and high mechanical strength materials for space missions. Their sub-nanometer wavelengths allow structural information of materials to be probed at atomistic precisions, providing unique capabilities inaccessible to other regions of the electromagnetic spectrum. The only instruments that are currently capable of generating the high brightness and coherent X-ray beams required for atomic scale material investigations are electron accelerator facilities. An emergent problem however is that the performance requirements on the scientific frontier of these investigations dramatically outstrip the capabilities of present state-of-the-art electron sources and cathode technologies1-3. The high demand for increasingly high performance electron beams is such that U.S. department of energy (DOE) commissioned studies have repeatedly identified electron sources as a critical risk area, forming one of the highest accelerator R&D priorities for the next decade1-4. There are multiple approaches to this problem. One challenging avenue is to shield high quantum efficiency (QE) bialkali antimonide photocathodes with graphene to meet the required transformational advances in lifetime and efficiency simultaneously5, 6. This type of approach is important in meeting an ultimate goal, however, the process could take many years and the outcome is not necessarily guaranteed. Therefore, pursuing alternate approaches in parallel is beneficial in mitigating the development risks. One such focus is surface passivation and/or the engineering of substrates for semiconductor photocathodes. For example, it is known that surface treatments for metallic substrates play an important role in securing maximum QE of deposited photocathodes. Only limited literature is available on this topic7-9, but the consensus indicates benefits from electrochemically etching the surfaces to smoothen morphology (i.e. electropolishing) and further chemical passivation by exposing them to gases at elevated temperatures, etc. More recent approaches in this direction include use of semiconductor single 3 crystals such as silicon and gallium arsenide for clean and atomically controlled surfaces10-12, the use of different metal surfaces for reflectivity enhancement13, and implementation of nanostructures14, 15. Here, we demonstrate that atomically thin two-dimensional (2D) crystals such as graphene and hexagonal boron nitride monolayers can play both roles of surface passivation and engineering of metal substrates. The generalized hypothesis driving this approach was as follows. 1) The atomic thinness of a graphene or hexagonal boron nitride monolayer is suited to coat any type of substrate surfaces due to its mechanical flexibility16-20, 2) they can withstand the typical substrate cleaning processes of ~500 oC due to its thermal stability21-24, 3) they provide chemically inert surfaces for possible highly-crystalline photocathode growth based on their dangling bond-free atomic structures25-29, and 4) they are optically transparent in visible region (only 2.3 % absorption per monolayer for graphene) thus any QE decrease due to their light absorption should be minimal. A particular photocathode material of interest is potassium cesium antimonide (K2CsSb) because it possesses one of the highest visible QEs with a peak that can exceed 20 % at 3 eV, yet does not require the extremely deep operating vacuum of ~10-11 Torr as that of activated gallium arsenide (GaAs: Cs-O)30. Specific results that we achieved include an unexpected QE enhancement compared to a non-coated case when 2D crystals are coated on metallic substrates. The enhancement was a relative 10 % on average at 405 nm (3.1 eV) and a relative 36 % at 633 nm (2.0 eV), with up to 80 % at localized "hot" spots. Our proposed structure of coating vanishingly thin layers on reflective substrates serves as a milestone towards a novel method to enhance the QE of accelerator-relevant semiconductor photocathodes. 2. Results and Discussion 2.1 Quantum efficiency maps of bialkali antimonide photocathodes on atomically thin 2D crystal coated substrates 2.1.1 Graphene synthesis, hexagonal boron nitride monolayer and phototube fabrications The graphene and hexagonal boron nitride monolayer used in this study was grown by chemical vapor deposition (CVD). We synthesized graphene and confirmed its thickness to be 4 monolayer with minimal structural defects (Figure 1 (a)). Specifically, Raman spectroscopy showed a 2D/G peak ratio of ~3, where a 2D/G value of higher than ~2 is accepted as an indication of a monolayer27. There was no observable D peak at ~1350 cm-1 indicating the structural defect induced vibration mode in graphitic materials. The graphene was further characterized by atomic force microscopy (AFM), which showed continuous films with monolayer thickness of ~0.5 nm. We purchased hexagonal boron nitride monolayer (see Experimental Section for details). For one of the phototubes, graphene film was transferred onto stainless steel and hexagonal boron nitride film were transferred onto nickel mesh grids (Figure 1 (b)). For another phototube, both graphene and hexagonal boron nitride monolayer films were transferred onto sapphire substrate (Figure 1 (c)). All of the transfers were performed using an established polymer-supported wet-based method. After removal of the polymer-support in acetone baths and drying, each set of 2D crystal-coated substrate was installed into vacuum tube assemblies. Potassium cesium antimonide (K2CsSb) photocathodes were then deposited on the films and permanently sealed (Figure 1 (b), (c)). Sapphire windows with patterned metal grids were used as anodes to collect photoelectrons. The QE of the photocathodes was measured in reflection mode; i.e. illuminating from photocathode side and collecting emitted electrons from the same side (Figure 1 (d)). The vacuum phototube allows a unique opportunity for long-term stability that is inaccessible in dynamic pumping environments. The design used here also allows for routine and repeatable QE and optical measurements of the photocathodes of interest. Figure 1. (a) Photograph of graphene transferred onto SiO2/Si substrate. Red arrow indicates an edge of graphene film. (b) Photograph of K2CsSb photocathode deposited on graphene coated stainless steel substrate and hexagonal boron nitride coated nickel mesh grid. Red and white arrows indicate regions of graphene and hexagonal boron nitride coating, respectively. (c) Photograph of K2CsSb photocathode deposited on graphene and hexagonal boron nitride coated sapphire substrate. Red and white squares indicate regions of graphene and hexagonal boron 5 nitride coating, respectively. (d) Side view schematic of photocathode structure and photoemission measurements performed in this study. 2.1.2 Quantum efficiency maps of photocathodes on graphene coated reflective substrates Figure 2 (a) is a top view schematic of a photocathode used in this study. Specifically, we prepared a chemically passivated stainless steel substrate with a monolayer graphene region and grew a K2CsSb photocathode on it using a conventional sequential deposition. Figure 2 (b) is a QE map obtained by rastering a 405 nm light emitting diode (LED) with spot size of ~0.2 mm. An overall QE well in excess of 15 % was achieved over the 4 mm x 4 mm sample area, which indicates that our K2CsSb photocathodes are of high quality. What is immediately evident is an enhanced QE in the region with graphene coating. This region has a mean QE of ~ 20 % (standard deviation: 0.53 %) in contrast to ~18 % (standard deviation: 0.66 %) at the region without coating (Figure 2 (c)), or a relative 10 % increase compared to the uncoated surface. To resolve more detailed features, we performed high spatial resolution QE mapping using a focused laser of 350 nm spot size, using the same photon energy of the LED at 405 nm. Fine features at the interface that resemble optical microscopy images of the graphene coating are observed (Figure 2 (d)), supporting the notion that the graphene monolayer is responsible for the QE enhancement. The average QE difference between the regions with and without graphene was a relative ~ 8 %, consistent with the measurements in Figure 2 (b). Figure 2. (a) Top view schematic of our photocathode structure. (b) 405 nm illuminated QE map of K2CsSb photocathodes with 0.2 mm spatial resolution. (c) Statistics of QE in (b) by pixel counts. Gr and SS labels represent pixels in regions with and without graphene coating in (b), respectively. (d) Enlarged region of the black square in (b) with intensity normalized to the maximum value. 6 2.1.3 Quantum efficiency maps of photocathodes on graphene coated transparent substrates A role of substrate in the observed QE enhancement can be studied by making a comparison on optically transparent substrates. To do so, we fabricated a separate vacuum phototube with a sapphire substrate for the photocathode. The sapphire substrate similarly contained a region of monolayer graphene coating. Figure 3 (a) is the top view schematic, which indicates our graphene coating. We obtained a QE map by the same configuration as previously described in the reflective substrate case, which is to raster a 405 nm light emitting diode with spot size of ~0.2 mm over the 4 mm x 4 mm sample area (Figure 3 (b)). An overall QE of >15 % was achieved similar to a reflective substrate case, indicating again that our K2CsSb photocathodes are of high quality. In sharp contrast to the stainless steel substrate, however, we observed an opposite effect of coating on the QE, i.e. the QE decreased for the region with graphene coating in this case where the substrate is optically transparent. The decrease was relative ~13 % on average with mean QE of ~16 % (standard deviation: 1.1 %) and ~18 % (standard deviation: 1.2 %) for the regions with and without the coating, respectively (Figure 3 (c)). The result strongly suggests that an origin of enhanced QE is due to optical interactions between the coating, reflective substrate, and K2CsSb photocathodes. If the QE enhancement was due to other factors such as improvement of K2CsSb photocathodes crystal quality, then QE enhancement by the coating should occur regardless of substrates being reflective or optically transparent. We confirmed that the photocathode thicknesses do not change due to the coating (Figure 4 (c)). Figure 3. (a) Top view schematic of our photocathode structure. (b) Corresponding QE map taken by 405 nm illumination with 0.2 mm spatial resolution. Scale bar is 1 mm. (c) Statistics of QE in (b) by pixel counts. Gr and Sapphire labels represent pixels in regions with and without graphene coating in (b), respectively. 7 2.1.4 Quantum efficiency maps of photocathodes on hexagonal boron nitride monolayer coated reflective substrates Our next question was whether the QE enhancement with the 2D crystal sublayer was specific to graphene. If the QE enhancement can be achieved for other compositions of 2D crystals, then our findings lead to a proposal of novel photocathode structure that depends less on a material type. To this end, we studied a case for CVD hexagonal boron nitride (hBN) monolayers, which were synthesized in similar conditions as that of graphene. Specifically, we transferred three individual monolayers of CVD grown hBN onto nickel substrate, then deposited K2CsSb photocathode on it in the same process as previously described for the stainless steel/graphene films. Figure 4 (a) shows a high spatial resolution QE map of the K2CsSb photocathode on nickel substrate taken using focused laser with wavelength of 405 nm and spatial resolution of 350 nm. In comparison, Figure 4 (b) is the reference QE map of the simultaneously deposited K2CsSb photocathode on stainless steel without hBN. A mean QE nearing 20 % (standard deviation: 1.0 %) was achieved for the photocathode with hBN sublayer whereas it was less than 18 % (standard deviation: 0.31 %) for the bare stainless steel counterpart. This QE enhancement factor is in the similar range as that of graphene case, demonstrating that the QE enhancement can be achieved by atomically thin coatings other than graphene, and thus suggesting the possibility of a generalized method for enhancing the QE. When we checked optical transmission spectra of K2CsSb photocathodes on bare, graphene coated, and hexagonal boron nitride coated sapphire substrates (Figure 4 (c)), we only saw negligible difference between them that matches our model calculations, which indicates that K2CsSb photocathode thickness does not change due to 2D crystal coatings. 8 Figure 4. 405 nm illuminated QE map of K2CsSb photocathodes with (a) and without (b) hexagonal boron nitride monolayer coating on nickel and stainless steel substrates, respectively. Spatial resolution is 350 nm. Both K2CsSb photocathodes were deposited simultaneously. Scale bars are 1 µm. (c) Optical transmission spectra of K2CsSb photocathodes on bare, graphene (Gr) coated, and hexagonal boron nitride (hBN) coated sapphire substrates sealed in a vacuum tube. Implications of these results are broad. A scientific implication is that there could be a novel optical interaction mechanism to enhance the QEs of semiconductor photocathodes using atomically thin coatings. This could open up a new pathway in the ongoing approach of engineering substrates to enhance the QE of deposited semiconductor photocathodes13, 15. A technological implication could be that atomically thin layer coating eliminate time-consuming optimizations of substrate preparations. Our results demonstrate that simply by coating atomically thin layers on metallic substrates, K2CsSb photocathodes with QEs higher than those on electrochemically polished and chemically passivated metal substrates can be achieved. 2.2 Material characterization of photocathodes deposited on atomically thin 2D crystal coated substrates We previously demonstrated that K2CsSb photocathodes grown on graphene coated substrates exhibit X-ray diffraction (XRD) and X-ray fluorescence (XRF) spectra that are consistent with those obtained when using uncoated silicon substrates31. These results indicate that both the crystal quality and elemental stoichiometry of K2CsSb photocathodes do not appreciably change due to a graphene coating. Here, we performed a similar study using monolayer hBN films. At the National Synchrotron Light Source II (NSLS-II) of Brookhaven National Laboratory (BNL), we deposited K2CsSb photocathodes on hBN coated substrates and 9 monitored XRD and XRF in-situ. The results are shown in Figure 5 (a) and (b). Figure 5 (a) is the XRD spectra of K2CsSb photocathodes deposited with (red) and without (black) hBN films on sapphire substrates. Sapphire is known to be a reliable substrate material for K2CsSb photocathodes growth and we assumed that there should not be a crystal quality difference. Peak positions and their full width at half maximum (FWHM) are summarized in Table 1. The peak positions and FWHM were identical to each other with a good match of d-spacings to the theoretical values. Specifically, d-spacings were 3.40 and 2.15 Å, and FWHMs were 0.03 and 0.01 Å for (002) and (004) crystal orientations, respectively. These results indicate that the crystal quality of K2CsSb photocathodes does not change due to the hBN coating. This is consistent with elemental stoichiometry of close to K2CsSb achieved on hBN coated substrate. Figure 5(b) is XRF spectrum of the K2CsSb photocathodes grown on the hBN coating. Potassium (K), antinomy (Sb), and cesium (Cs) as present as expected, where the peak near 4.9 KeV may have minimal contribution from titanium (Ti) sample mount. Spectrum analysis revealed stoichiometry of K2.37Cs1.05Sb. Based on such material characterizations of the photocathodes, the general appearance is that 2D crystal coatings do not alter their crystal quality and elemental stoichiometry compared to well-stablished substrates such as sapphire and silicon. It is likely that that the dangling bond- free atomic structure of 2D crystals provides a chemically inert surface for highly-crystalline photocathode growth. 10 Figure 5. (a) X-ray diffraction (XRD) spectra of K2CsSb photocathodes deposited on sapphire (black) and hexagonal boron nitride coated substrates (red) at the National Synchrotron Light Source II of Brookhaven National Laboratory. Intensity is normalized to the K2CsSb (002). (b) X-ray fluorescence (XRF) spectrum of hexagonal boron nitride coated substrate (black). Colored arrows indicate the peak positions of potassium (K), antinomy (Sb), and cesium (Cs), d-spacing (Å) Width (Å) (HKL) Theory (Å) Cathode/sapphire Cathode/hBN 4.300 2.159 4.305 2.155 0.037 0.010 0.033 0.010 (002) (004) (002) (004) 4.310 2.155 4.310 2.155 respectively. Red line is the fitted spectrum used for quantitative analysis. Table 1. List of d-spacing for observed peaks in comparison to the theoretical values for K2CsSb. Corresponding crystal facet orientations and FWHM peak widths are also shown. 2.3 Wavelength dependence of quantum efficiency enhancement by atomically thin 2D crystal coating and a possible enhancement mechanism 2.3.1 Wavelength dependence of quantum efficiency enhancement by atomically thin 2D crystal coating The wavelength dependence of the QE enhancement was investigated to gain insights into its mechanism. Specifically, lasers and LEDs with wavelengths of 375 nm, 405 nm, 532 nm, and 633 nm were focused to obtain QE maps of an identical region at the transition between bare and graphene coated stainless steel in the phototube. Spatial resolution of these QE maps is ~1 µm and are shown in Figure 6. The QE is normalized to highest values in each map, and the black arrows indicate the boundary of the graphene coated (top half) and non-coated regions (bottom half). It is instantly evident that the enhancement has a strong wavelength dependence and that the enhancement increases at longer wavelengths. While the enhancement is negligible at 375 nm, it becomes relative 10 % on average at 405 nm (consistent with the previous section), 11 18 % at 532 nm, and reaches 36 % at 633 nm. The maximum value in a "hot" spot in the 633 nm map is as high as an 80 % relative increase in QE. Figure 6. QE maps of K2CsSb photocathodes on an identical region where stainless steel substrate is half coated with graphene (top half). Four different illumination wavelengths of (a) 375 nm, (b) 405 nm, (c) 532 nm, and (d) 633 nm were used. Black arrows indicate the location of boundary between graphene coated and non-coated regions. Spatial resolution is ~1 µm and intensity are normalized to the maximum value. Scale bar is 10 µm and applies for all maps. 2.3.2 Possible mechanisms of the quantum efficiency enhancement We considered the following possible mechanisms for the observed QE enhancement; 1) interference effects due to the 2D crystal coatings, and 2) enhancement of substrate mirroring effect due to physical gaps created between photocathodes and substrates by 2D crystal coatings. For 1), beneficial interference effects can occur when the particular optical constants and film thicknesses result in enhanced absorption and thus QE. This involves well-known thin film optical principles e.g. for design of light emitting diodes (LEDs) to enhance their brightness32, 33, or antireflective coatings on lenses and windows. Total optical absorption by a photocathode due to interference effects is a strong factor of the reflectivity of substrate, thus it is possible that the 2D crystal coating changes the reflectivity of substrate such that QE of deposited photocathode increases. For 2), it is established knowledge that the electric field must decrease in the vicinity of a conducting surface to satisfy electromagnetic boundary conditions (and must vanish entirely for an ideally perfect conductor/reflector). Since the photocathode and 2D sublayer coating thicknesses are much smaller than optical wavelengths, the resultant absorption and QE for a photocathode in intimate contact with a highly reflective substrate is lower than that without the substrate, since the local electric field is reduced. Our investigations suggest that due to the 12 substrate roughness, the 2D crystal coatings may actually create effective physical gaps of few hundred nanometers or more between the photocathode and metal substrate, and this may enhance the mirroring effect. Our evaluation of the QE enhancement by mechanism 1) using a transfer matrix approach matched experimental results qualitatively but not quantitatively. Calculated values were roughly one order of magnitude lower than experimental values for wavelength range of 375-633 nm that we measured. We covered photocathode thickness of 15-25 nm, incident angle of 0-89 degrees as well as substrate materials of iron and silicon. All of these parameters have strong effects on optical absorption of photocathodes when conditions are in interference effects regime13. The fact that they did not alter the absorption by photocathodes in our case suggests that it is not the dominant mechanism to explain our results. It simply implies that the 2D crystal coatings do not modify the reflectivity of underlying substrates in our model, which is reasonable due to the relatively high matching of the optical constants. On the contrary, we found that mechanism 2) could explain our results much better. Figure 7 (a), (b) are scanning electron microscope images of stainless steel substrate with and without graphene coatings, respectively. One can see graphene wrinkles that go horizontally across the image as indicated by white arrows. These suggests that graphene spans over the grooves in these mechanically ground or rolled substrates as schematically illustrated in Figure 7(c). Optical profilometer measurements of the substrates indicated average surface roughness of 230 nm, and grooves with average maximum height of 1.4 µm and pitch of 15-50 µm. We previously demonstrated that free-standing 2D crystals applied with these transfer techniques will naturally span large voids and still support K2CsSb photocathodes6, 31 thus we reason it is most probable that there are effective physical gaps between photocathodes and the quite rough stainless steel substrates in this case as well. Contrary to the case where a photocathode is in intimate and perfect contact with a reflecting surface, a physical gap between reflector and photocathode can result in absorption and QE increases. For ideal planar geometries one must consider coherent interference effects, but in the much more realistic case where surfaces are rough and incoherent, a simple multiple 13 reflection enhancement is likely. Figure 7 (d) shows calculation results for the relative optical absorption enhancement (hence QE) for a K2CsSb photocathode with an ideal stainless steel reflecting mirror located underneath it, compared to that of a free-standing photocathode. Optical reflectivity of stainless steel in Zwinkels et al.34 was used for the calculation. The model matches our experimental results qualitatively with an exception of 375 nm. The reflectivity of stainless steel decreases as wavelength gets shorter, especially around 375 nm34 thus it might be responsible for the mismatch. Figure 7. (a), (b) Scanning electron microscope (SEM) images of stainless steel substrates with and without graphene coating, respectively. Scale bar is 5 µm. White arrows indicate graphene wrinkles that go horizontally across the image. (c) Simplified illustration of Figure 7 (a). (d) Calculated relative optical absorption enhancement of photocathodes with a physical gap between photocathode and reflective substrate (black) compared with QE enhancement observed experimentally (red). 3. Conclusions 14 In summary, we observed unexpected QE enhancement of K2CsSb photocathodes by interfacing them with an atomically thin 2D crystal layer. The enhancement occurred in a reflection mode, when a 2D crystal was placed in between photocathodes and optically reflective substrates. Specific combinations of 2D crystal and reflective substrates that we investigated were graphene on stainless steel and hexagonal boron nitride monolayer on nickel. Observed QE enhancement was average of relative 10 % at ~3.1 eV (405 nm), relative 18.2 % at ~2.0 eV (532 nm), and relative 36 % at ~2.0 eV (633 nm) when the photocathodes were deposited on graphene coated stainless steel. Surprisingly, the enhancement reached up to relative 80 % at "hot" spot regions at ~2.0 eV. The enhancement was relative 9.0 % on average at ~3.1 eV for photocathode on hexagonal boron nitride coated nickel. The enhancement did not occur when reflective substrates were replaced with optically transparent sapphire. Optical transmission spectra of K2CsSb photocathodes on bare, graphene coated, and hexagonal boron nitride coated sapphire substrates were identical, which indicates that K2CsSb photocathode thickness does not change due to 2D crystal coatings. XRD and XRF revealed that crystal orientation, quality and elemental stoichiometry do not appreciably change either due to 2D crystal coatings. Surface morphology of 2D crystal coated substrates indicated that 2D crystals span over the grooves of grinded substrates, which suggests that 2D crystal coatings create effective physical gap between deposited photocathodes and substrate surfaces. Our model indicates that this physical gap enhances the mirroring effect of reflective substrates thus leads to QE enhancement we observed. The results provide a pathway toward simple method to enhance the QE of semiconductor photocathodes by an atomically thin 2D crystal on substrates. 15 Experimental Section Synthesis and transfer of atomically thin 2D crystals: Graphene monolayers were synthesized via chemical vapor deposition (CVD) using methane gas as the carbon source and copper (Cu) foils as substrates. CVD monolayer hexagonal boron nitride (hBN) grown on copper foil was purchased from Graphene Supermarket and was incorporated into the phototubes. Monolayer hexagonal boron nitride used for the photocathode material characterization was synthesized via the epitaxial growth on sapphire substrates by low-pressure CVD35. For wet-transfer of CVD graphene and hexagonal boron nitride monolayer onto various substrates, poly(methyl methacrylate) (PMMA) was used as a mechanical support and removed by subsequent acetone rinsing. Deposition of bialkali antimonide photocathodes for vacuum tubes: Graphene films on a stainless steel foil frame (SS304), hexagonal boron nitride films on nickel (Ni) TEM mesh grid, and both films on annealed sapphire were installed in phototube assemblies for bialkali antimonide photocathode deposition at Photonis Defense Inc. All materials in the vacuum envelope were pre-cleaned in-situ at 350 oC in UHV prior to photocathode deposition. For the annealed sapphire with graphene and hexagonal boron nitride coatings, ex-situ annealing at 600 oC in hydrogen gas atmosphere were also performed to chemically reduce the sealing metal. While monitoring the sensitivity of the photocathode films, the components K, Cs, and Sb were deposited on substrates via thermal evaporation to achieve typical stoichiometry of K2CsSb with thickness of ~20 nm. The vacuum-sealed packages consisted of sapphire windows on both sides of the photocathode assembly with metal traces patterned on the windows to establish an extracting electric field. Photoemission measurement of bialkali antimonide photocathodes in vacuum tubes: 375 nm pulsed laser, 405 and 532 nm light emitting diodes (LEDs), 633 nm He-Ne laser, and Fianium WhiteLase tunable laser (400-2,400 nm, repetition rate 40 MHz) equipped with a Fianium AOTF (Acousto-Optic Tunable Filter) system were used as light sources for photoemission measurements. The focused spot size for large area QE maps was ~0.20 mm (405 nm LED), <5 µm for wavelength dependence QE maps (375 nm pulsed laser, 405 and 532 nm LEDs, and 633 nm He-Ne laser), and < 350 nm for a high spatial resolution QE maps (Fianium WhiteLase 16 tunable laser). Spatial resolution for the wavelength dependence QE maps was ~1 µm as we used 1 µm steps. Anode traces on the sapphire windows were sufficiently biased with respect to the photocathode assembly to overcome space-charge effects and collect photoelectrons in all cases. The quantum efficiency was calculated using the known power of incident light at each wavelength, as obtained from a calibrated reference diode. A home-built confocal microscopy system with a scanning mirror that allows for precise location of the focal point onto the sample surface was used for high spatial resolution QE maps. Material characterization of bialkali antimonide photocathodes: In-situ X-ray diffraction (XRD) growth studies on K2CsSb were performed at the Brookhaven National Laboratory National Synchrotron Light Source II (NSLS-II) beamline ID-4 (ISR) using photon energy of 11.47 KeV (λ = 1.0809 Å). The thin film growth was performed in a custom-built ultrahigh vacuum chamber with a base pressure of low 10-10 Torr. Hexagonal boron nitride monolayers grown by CVD were transferred onto silicon (Si) substrates. The reference Si substrates and coated substrates were loaded into the growth chamber and annealed at 550 oC for 1 hour. Co- evaporation of K, Cs and Sb using pure metallic sources was used to fabricate K2CsSb photocathodes. The evaporation rate was controlled by adjusting the current of the fusion cells and was measured with a quartz crystal microbalance (QCM) placed alongside the sample. Alkali and antimony sources were turned on simultaneously, and the rates of the three were set to match the stoichiometry of K2CsSb based on real-time X-ray fluorescence (XRF) analysis. During deposition, the substrate temperature was set to about 90 oC. The XRD data were measured using a 4 axis diffractometer with a Pilatus 100 K X-ray camera mounted 70 cm downstream from the substrate. XRD was measured with a 2θ range from 5° to 25°. The XRF spectra were measured by a vortex multi-cathode X-ray detector mounted 45° with respect to the sample surface normal and approximately 25 cm away from the sample. Optical transmission measurements of bialkali antimonide photocathodes in a vacuum tube: Jasco V-730 UV-Visible Spectrophotometer with light spot of 1x2 mm was used to measure optical transmission spectra of bialkali antimonide photocathodes that are on bare and atomically thin 2D crystal coated sapphire substrates. 17 Absorption calculation of bialkali antimonide photocathodes: Calculations for interference effects analysis were performed using a transfer matrix approach assuming normal incidence36. Optical constants of graphene and Si were taken from Kravets37 and Vuye38, respectively. Optical constants of Fe from Johnson and Cristy were used to estimate stainless steel39. Optical constants for K2CsSb were provided by Photonis and were consistent with calculations using optical constants from Motta40. Calculations for substrate mirroring effect analysis were performed using NKD Gen software (available from University of Barcelona), which is also based on conventional transfer matrix methodology. Established literature values were used for optical constants (n,k) of K2CsSb and stainless steel34. Acknowledgments The work was financially supported by the U.S. Department of Energy (DOE) Office of Science U.S.-Japan Science and Technology Cooperation Program in High Energy Physics. This research used the ISR beamline of the National Synchrotron Light Source II, a U.S. Department of Energy (DOE) Office of Science User Facility operated for the DOE Office of Science by Brookhaven National Laboratory under Contract No. DE-SC0012704. In particular, the authors wish to thank Ken Evans-Lutterodt and John Walsh for their expert assistance. Conflict of Interest H.Yamaguchi, F.Liu and N.A. Moody have submitted provisional patent on the topic of this study. 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1805.11662	1	1805	2018-05-15T15:27:06	Integrated Conductivity-Modulation-Based RF Magnetic-Free Non-Reciprocal Components: Recent Results and Benchmarking	[ "physics.app-ph", "eess.SP" ]	Achieving non-reciprocity and building nonreciprocal components through spatio-temporal modulation of material properties has attracted a lot of attention in the recent past as an alternative to the more traditional approach of exploiting Faraday rotation in magnetic materials. In this letter, we review recent research on spatio-temporal conductivity-modulation, which enables low-loss, small-footprint, wide-bandwidth and high-power-handling non-reciprocal components operating from radio frequencies (RF) to millimeter-waves (mm-waves) and integrated in a CMOS platform. Four generations of non-reciprocal circulators and circulator-based systems will be reviewed. We will also discuss metrics of performance that are important for wireless applications and standards, and introduce a new antenna (ANT) interface efficiency figure of merit ($\eta_{ANT}$) to enable a fair comparison between various types of antenna interfaces.	physics.app-ph	physics	SUBMITTED TO IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS 1 Integrated Conductivity-Modulation-Based RF Magnetic-Free Non-Reciprocal Components: Recent Results and Benchmarking Negar Reiskarimian, Student Member, IEEE, Aravind Nagulu, Student Member, IEEE, Tolga Dinc, Member, IEEE, and Harish Krishnaswamy, Member, IEEE, 8 1 0 2 y a M 5 1 ] h p - p p a . s c i s y h p [ 1 v 2 6 6 1 1 . 5 0 8 1 : v i X r a and building non-reciprocity Abstract-Achieving non- reciprocal components through spatio-temporal modulation of material properties has attracted a lot of attention in the recent past as an alternative to the more traditional approach of exploit- ing Faraday rotation in magnetic materials. In this letter, we re- view recent research on spatio-temporal conductivity-modulation, which enables low-loss, small-footprint, wide-bandwidth and high-power-handling non-reciprocal components operating from radio frequencies (RF) to millimeter-waves (mm-waves) and inte- grated in a CMOS platform. Four generations of non-reciprocal circulators and circulator-based systems will be reviewed. We will also discuss metrics of performance that are important for wireless applications and standards, and introduce a new antenna (ANT) interface efficiency figure of merit (ηAN T ) to enable a fair comparison between various types of antenna interfaces. I. INTRODUCTION R ECIPROCITY mandates the same signal transmission profile for waves propagating in opposite directions between two points in space. Various theorems of reciprocity has been formulated over the years, including the work of Green (electrostatics), Rayleigh (dynamic systems), Helmholtz (optics, acoustics) and Lorentz (electromagnetics) [1]. Lorentz reciprocity is a fundamental physical precept that characterizes the vast majority of electronic and photonic materials, circuits and components. Non-reciprocal components, such as circulators, isolators, gyrators and non-reciprocal phase-shifters, are critical for vari- ous RF and mm-wave applications, including communications, radar, imaging and sensing. Specifically, high-performance circulators can find application as the shared-antenna inter- face of transceivers for emerging wireless communication paradigms such as full-duplex (FD) [2]–[4] and FD multiple- input multiple-output (MIMO) systems [5], and in frequency- modulated continuous-wave (FMCW) radar. FD aims to in- stantly double the link capacity in the physical layer by simul- taneously transmitting and receiving at the same frequency, as well as providing other benefits in the higher layers [3], [4]. Reciprocity can be violated by breaking one of three neces- sary conditions - time-invariance, linearity or by exploiting materials with an asymmetric permittivity or permeability tensor. Traditionally, non-reciprocity has been achieved by using magnetic materials such as ferrites, which lose their reci- procity under the application of an external biasing magnetic field. Such magnetic non-reciprocal components are limited in their applicability, since ferrites are incompatible with IC fabrication processes and a permanent magnet is required to induce the magneto-optic Faraday effect [6]. This causes the resulting non-reciprocal element to be bulky, expensive and incompatible with CMOS integration. The oldest alternative to using magnets is to exploit the inherent non-reciprocity of active current/voltage-biased transistors [7]–[9]. Such an approach is compatible with IC fabrication, but is limited by the noise and nonlinearity introduced by the active devices [10]. Breaking reciprocity through nonlinearity has also been explored at RF [11] as well as in the optical domain [12]. However, the signal-power-dependent performance limits the applicability of this approach. In recent years, there has been progress on breaking reciprocity through time-variance, specifically spatio-temporal modulation of material parameters. Such approaches are the- oretically linear to the desired signal and noise free. Early approaches have focused on permittivity as the modulated parameter [13]–[21]. In the optical domain, permittivity is modulated through electro-optic or acousto-optic interactions, but the modulation index is typically extremely weak. In the RF domain, permittivity modulation is achieved using varac- tors which too exhibit limited modulation index (Cmax/Cmin is usually around 2 − 4). A weak modulation index directly translates to a large device size over which modulation must be performed. Varactors, and permittivity modulation in general, also exhibit a trade-off between modulation index and loss, particularly as the operating frequency is increased. Conse- quently, these efforts have resulted in designs that exhibit a trade-off between loss, size, bandwidth and linearity. In the circuits community, time-modulated systems are com- monly called linear periodically-time-varying (LPTV) circuits. Early reports on LPTV circuits date back to the 1940s [22]. In the following two decades, a class of LPTV circuits and systems also referred to as commutated networks attracted a lot of attention, and theoretical [23], [24] and practical aspects [25] of their implementation were explored. More recently, commutated networks have emerged once again as a hot topic of research, primarily due to the ability to realize tunable RF high-quality-factor filters (the so-called N-path filters) in CMOS for the first time [26]–[28]. Recently, we found that commutated networks have a rich set of unique properties that go beyond high-Q filtering, including the ability to realize non- reciprocity [29]–[34]. In this letter, we will cover our recent research on using commutated circuits to break reciprocity and build high- SUBMITTED TO IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS 2 Fig. 1: Conceptual diagrams of our conductivity-modulation-based circulators: (a) RF N-path-filter-based circulator and circulator-receiver architecture employing a linearity-enhancement technique for transmitter side excitations [30], [31]. (b) Millimeter-wave switched-transmission-line circulator [32], [33]. (c) RF switched-transmission-line circulator with >1W power- handling capability and inductor-free antenna balancing [34]. performance passive circulators operating from RF to mm- wave frequencies in CMOS. Our switch-based commutated circuits may be fundamentally understood as performing spatio-temporal conductance modulation, and leverage the fact that conductivity is a variable material property that is unique to semiconductors. Conductivity in semiconductors can be modulated over a wide range (CMOS switch ON/OFF conductance ratios can be as high as 103 − 105) relative to permittivity. In Section II, we will describe the fundamental physical principles, as well as four generations of CMOS cir- culators and circulator-based wireless communication systems [30]–[34] targeting emerging full-duplex and 5G mm-wave applications. We will also cover architectural concepts that improve the linearity and isolation. In Section III, we discuss various metrics of performance that are critical for wireless applications, and introduce a new antenna interface efficiency figure of merit (ηAN T ) that enables a fair comparison be- tween various reciprocal and non-reciprocal shared-antenna interfaces. Finally, Section IV concludes the paper. II. CONDUCTIVITY-MODULATION-BASED NON-RECIPROCITY A. N-Path-Filter-Based Circulator and Circulator-Receiver Architecture N-path filters enable the implementation of reconfigurable, high-Q filters at RF in nanoscale CMOS IC technology [26], and are a class of LPTV networks where the signal is periodically commutated through a bank of capacitors. We have found that applying a relative phase shift to the non- overlapping clocks driving the input and output switch sets of a two-port N-path filter imparts a non-reciprocal phase-shift to the signals traveling in the forward and reverse directions since they see a different ordering of the phase-shifted switches [35]. Essentially, the two-port N-path filter with a clock phase shift of 90◦ realizes an electrically-infinitesimal gyrator. To convert phase non-reciprocity to non-reciprocal wave propagation, an N-path-filter with ±90◦ phase-shift is placed inside a transmission line loop with a length of 3λ/4 (Fig. 1(a)). The combination of the non-reciprocal phase shift of the N-path filter with the reciprocal phase shift of the transmission line results in unidirectional wave propagation (−270◦ − 90◦=−360◦), because the boundary condition for wave propagation in the reverse direction can not be satisfied (−270◦+90◦=−180◦). Additionally, a three-port circulator can be realized by placing ports anywhere along the loop as long as they maintain a λ/4 circumferential distance between them. Interestingly, maximum linearity with respect to the transmitter (TX) port is placed adjacent to the N-path filter, since the inherent TX-RX isolation suppresses the voltage swing on either side of the N-path filter, enhancing its linearity. Table I lists the performance metrics of a 750MHz 65nm CMOS N-path-filter-based circulator, which is the first CMOS passive circulator to be implemented [29], [30]. Furthermore, the N-path filter in the circulator can be repurposed as a down-converting mixer, directly providing the baseband received signals on the N-path filter capacitors. More details about this work can be find in [31]. the receiver (RX) port is achieved if B. Wideband Millimeter-Wave Swithced-Transmission-Line- Based Non-Reciprocal Circulator Inspired by the N-path-filter-based RF circulator discussed in the previous subsection, we proposed a generalized conduc- tivity modulation concept using switched transmission lines [32], [33]. The concept, shown in Fig. 1(b), consists of two sets of differential mixer-quad switches on either end of a differential transmission-line delay (replacing the commutated capacitors). The switches are clocked at a modulation fre- quency ωm, and the delay of the line is equal to one quarter of the modulation period (Tm/4). The switches are clocked with 50% duty-cycle square-wave clocks with a relative phase shift of Tm/4. As a result of this, waves traveling from left to right experience the transmission-line delay with no sign flips in both halves of the clock period. On the other hand, waves traveling from right to left experience the transmission-line delay along with one sign flip. In other words, transmission in both directions is perfectly lossless, but there is an infinitely broadband 180◦ non-reciprocal phase difference. In other words, the structure realizes an infinitely broadband gyrator. SUBMITTED TO IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS 3 Fig. 2: FD wireless communication link using shared-antenna interface. The key aspect of this architecture is that Similar ideas related to switched transmission lines to realize broadband non-reciprocity have been explored in [36], [37]. the infinite bandwidth of the gyrator implies that the signal frequency and the modulation frequency are completely decoupled. An arbitrarily low modulation frequency can be used, with the only restriction being an associated increase in the transmis- sion line length, and hence, loss. This benefit was exploited to realize a mm-wave (25GHz) fully-integrated passive circulator in 45nm SOI CMOS, shown in Fig. 1(b) [32], [33], by once again placing a 3λ/4 transmission line around the gyrator. Modulation was performed at 1/3rd of the operating frequency (8.33GHz). The lowering of the modulation frequency, as well as the need for 50% duty-cycle clocks, as opposed to numerous low-duty-cycle clocks as in N-path filters, is critical as clocking switches at mm-wave frequencies is impractical in current CMOS IC technology. The infinitely-broadband phase non-reciprocity also implies broader bandwidth of operation for the resultant circulator. A summary of the performance of the 25GHz prototype can be found in Table I. C. Highly Linear RF Non-Reciprocal Circulator with Loss- Free, Inductor-Free Antenna Balancing Fig. 1(c) shows the architecture of a highly-linear RF circulator, which uses the feature of lowering the modulation frequency to enhance the power handling and linearity of the circulator at 1GHz operating frequency. The switches were modulated at 333MHz for 1GHz operation, and such a low modulation frequency enables the usage of the thick-oxide devices in 180nm SOI CMOS technology to boost power handling. The measured in-band TX-ANT/ANT-RX input third-order intercept points (IIP3) are +50dBm and +36.9dBm respectively. TX-ANT input 1dB compression point (P1dB) is >+30.7dBm (limited by the measurement setup), at which point the compression is only 0.66dB, while the ANT-RX input P1dB is +21dBm. This implementation notably improves linearity and power handling by 10-100× when compared with our prior CMOS non-reciprocal circulators [34]. The TX-RX isolation of all shared-antenna interfaces is limited by the matching of the antenna port, which necessitates an antenna tuning mechanism. Traditionally, magnetic circu- lators are followed by antenna tuners. In this work, antenna balancing is achieved by implementing digitally programmable feed capacitor banks between TX-RX and ANT-RX ports. Due to the −90◦ phase difference between the TX and ANT ports and the programmable nature of the feed capacitors, this produces tunable orthogonal currents which can cancel the leakage at the RX port produced by an antenna mismatch (Fig. 1(c)). The fully-differential architecture enables a free sign flip in the feed capacitor banks, and therefore allows complete VSWR coverage without using any inductive or resistive elements in the feed circuitry. Aggressive device stacking is employed in the static switches used in these feed capacitor banks so that they do not limit linearity and power handling. The ability to compensate a VSWR of up to 1.85 (and beyond) was demonstrated in this work. A summary of the performance of the prototype can be found in Table I. III. ANTENNA INTERFACE EFFICIENCY FOM An ideal antenna interface should have no loss, extremely high power handling and no additional power consumption. Conventional three-port reciprocal antenna interfaces, such as hybrids or electrical-balance duplexers (EBDs) [38]–[41], have high power handling but exhibit a fundamental 3dB loss, with an additional ≈1dB loss due to implementation issues such as finite metal resistivity and substrate loss. LPTV circulators have lower loss than reciprocal interfaces, but only recently have been achieving comparable power handling and require additional power consumption. Hence, to enable a fair compar- ison between various shared-antenna interfaces, an FoM called antenna interface efficiency (ηAN T ) is introduced. It calculates the degradation imparted to the transmitter efficiency by the antenna interface by assuming a certain baseline efficiency. 1) Metrics for Power Handling: Before introducing the new FoM, it is important to discuss the different metrics that deter- mine the TX-port power handling of an ANT interface. The most common metrics are TX-port input P1dB and IIP3. Typi- cally, communication systems operate with P1dB as the upper limit of the transmitted signal power. IIP3 captures the in-band intermodulation distortion produced on the input signal by the nonlinearity of the interface. This distortion is mainly relevant as it leaks into adjacent channels (a phenomenon commonly called spectral regrowth), potentially desensitizing other users. Typical wireless standards mandate a certain adjacent-channel leakage ratio (ACLR). Loosely, operating 20dB below the IIP3 level keeps the leakage into adjacent channels 40dB below the main signal power. SUBMITTED TO IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS 4 TABLE I: Comparison Table Architecture Technology Frequency TX-ANT/ANT-RX Trans. Isolation BW ZAN T impedance ANT-RX NF TX-ANT IIP3/P1dB ANT-RX IIP3/P1dB TX-induced RX P1dB Power Consumption Chip Area 5 ηAN T [30] [32] [38] [34] N-path-filter circulator Switched-t-line mm-wave circulator Electrical-balance duplexer Highly-linear RF circulator 65nm CMOS 0.61 - 0.975GHz -1.7/-1.7dB 1.9%(>25dB), 0.33%(>40dB) 50Ω 4.3dB 3 +27.5dBm/ N/R +8.7dBm/ N/R N/R 59 mW 45nm SOI CMOS 180nm SOI CMOS 25GHz -3.3/-3.2dB 18% (>18.5dB) 2 50Ω 3.3 - 4.4dB 1.9 - 2.2GHz -3.7/-3.9dB 15% (>40dB) 1.5:1 VSWR 3.9dB 180nm SOI CMOS 0.86 - 1.08GHz -2.1/-2.9dB 17%(>25dB), 3.1%(>40dB) 1.85:1 VSWR 3.1dB +20.1dBm/>+21.5dBm +19.9dBm/>+21dBm +70dBm/>+27dBm +72dBm/>+27dBm +50.025dBm/>+30.66dBm +36.9dBm/+21.01dBm N/R 78.4mW N/R 0mW +21.3dBm 170mW λ2/6400 or 25mm2 4 λ2/66 or 2.16mm2 λ2/13000 or 1.74mm2 λ2/5500 or 16.5mm2 7.2% >14.9% 13.8% >23.1% w/o LNA - Results from post layout simulation and w/ LNA - Results from measurements , 2 Limited by mmWave setup, 3Includes 2.3dB degradation due to LO phase noise, 1 4Includes SMD inductors on PCB, 5ηP A = 30% is used and P1dB is assumed to limit TX power handling. Since non-reciprocal circulators are intended to be used in full-duplex applications, new metrics of power handling arise from the need to receive a desired signal while transmitting a substantial amount of power. TX-induced RX 1dB compression is defined as the TX power at which a weak desired signal traveling from the ANT port to the RX port is compressed by 1dB. Based on the results shown in Table I, this metric is more stringent than P1dB or IIP3. TX-induced RX NF refers to the noise figure measured for ANT-to-RX transmission while a powerful transmit signal is fed to the TX port. This metric would include noise generated by reciprocal mixing effects between the TX signal and the modulation signal phase noise. This is a challenging metric to measure, and requires further investigation. Finally, frequency-division duplex (FDD) standards today require as high as +70dBm TX-ANT IIP3 from duplexer filters and EBDs due to a standard-specific test related to the cross-modulation between the TX signal and a so-called full-duplex-spaced (FDS) jammer that would produce spur signals in the RX band. 2) Antenna Interface Efficiency: Consider a half duplex link with no shared-antenna interface, where the power amplifier is directly connected to the antenna. For this scenario, the transmitter efficiency will be equal to the efficiency of the power amplifier (ηP A). A full-duplex link is shown in Fig. 2. In the transmitter of FD node 1, the PA's DC power can be calculated as PDC,P A = Pout,P A/ηP A, where ηP A is the drain efficiency of the PA and Pout,P A is the PA output power limited by whichever power handling mechanism discussed earlier dominates. Due to TX-ANT loss of the antenna interface, the output power transmitted would be Pout,P A/(ST X−AN T ). This signal reaches the receiver in FD node 2, where the signal-to-noise ratio is degraded by the ANT-RX noise figure (N F ) of the antenna interface. Hence, the effective transmitted power of this FD link can be written as Pout,P A/(ST X−AN T × N F ). On the other hand, the DC power consumption of the transmitter is increased to (PDC,P A + PDC,interf ace). The efficiency of the shared- antenna interface, ηAN T , can be expressed as the degradation in transmitter efficiency of this FD link compared to transmit- ter efficiency in the half-duplex case: ηAN T = Pout,P A/(ST X−AN T × N F ) PDC,P A + PDC,interf ace × 1 ηP A × 100%. (1) In scenarios where power handling is limited by P1dB, Pout,P A = P1dB and at this power level, the TX-ANT loss compresses by 1dB so that ST X−AN T = S21 × 1.26, where S21 is the small-signal TX-ANT loss. Hence (1) can be modified as ηAN T = P1dB/(S21 × 1.26 × N F ) (PDC,interf ace + P1dB/ηP A) × 1 ηP A × 100%. (2) For an ideal antenna interface, S21=0dB, N F =0dB, PDC,interf ace =0mW, and P1dB → ∞. Hence, ηAN T = 100%. For an ideal reciprocal interface, such as an ideal EBD, S21 = N F =3dB, PDC,interf ace =0mW, and P1dB → ∞. From eq. 1, the efficiency of an ideal reciprocal interface is 25%. In practice, due to the implementation losses, the efficiency of reciprocal interfaces is < 25%. For instance, the state-of-the-art EBD in [38] achieves 13.8%. For the first time, our work in [34], achieves a superior ηAN T when compared with electrical balance duplexers due to the low-loss and high power handling. IV. CONCLUSION In this letter, we covered recent advances in conductivity- modulation-based integrated CMOS non-reciprocal compo- nents. We also discussed metrics of performance and a new figure of merit that enables a fair comparison across a variety of antenna interfaces. 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