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9 | 3639-3642 | 19(a), gives output
rectified voltage corresponding to both the positive as well as negative
half of the ac cycle Hence, it is known as full-wave rectifier Here the
p-side of the two diodes are connected to the ends of the secondary of the
transformer The n-side of the diodes are connected together and the
output is taken between this common point of diodes and the midpoint
of the secondary of the transformer |
9 | 3640-3643 | Hence, it is known as full-wave rectifier Here the
p-side of the two diodes are connected to the ends of the secondary of the
transformer The n-side of the diodes are connected together and the
output is taken between this common point of diodes and the midpoint
of the secondary of the transformer So for a full-wave rectifier the
secondary of the transformer is provided with a centre tapping and so it
is called centre-tap transformer |
9 | 3641-3644 | Here the
p-side of the two diodes are connected to the ends of the secondary of the
transformer The n-side of the diodes are connected together and the
output is taken between this common point of diodes and the midpoint
of the secondary of the transformer So for a full-wave rectifier the
secondary of the transformer is provided with a centre tapping and so it
is called centre-tap transformer As can be seen from Fig |
9 | 3642-3645 | The n-side of the diodes are connected together and the
output is taken between this common point of diodes and the midpoint
of the secondary of the transformer So for a full-wave rectifier the
secondary of the transformer is provided with a centre tapping and so it
is called centre-tap transformer As can be seen from Fig 14 |
9 | 3643-3646 | So for a full-wave rectifier the
secondary of the transformer is provided with a centre tapping and so it
is called centre-tap transformer As can be seen from Fig 14 19(c) the
voltage rectified by each diode is only half the total secondary voltage |
9 | 3644-3647 | As can be seen from Fig 14 19(c) the
voltage rectified by each diode is only half the total secondary voltage Each diode rectifies only for half the cycle, but the two do so for alternate
cycles |
9 | 3645-3648 | 14 19(c) the
voltage rectified by each diode is only half the total secondary voltage Each diode rectifies only for half the cycle, but the two do so for alternate
cycles Thus, the output between their common terminals and the centre-
tap of the transformer becomes a full-wave rectifier output |
9 | 3646-3649 | 19(c) the
voltage rectified by each diode is only half the total secondary voltage Each diode rectifies only for half the cycle, but the two do so for alternate
cycles Thus, the output between their common terminals and the centre-
tap of the transformer becomes a full-wave rectifier output (Note that
there is another circuit of full wave rectifier which does not need a centre-
tap transformer but needs four diodes |
9 | 3647-3650 | Each diode rectifies only for half the cycle, but the two do so for alternate
cycles Thus, the output between their common terminals and the centre-
tap of the transformer becomes a full-wave rectifier output (Note that
there is another circuit of full wave rectifier which does not need a centre-
tap transformer but needs four diodes ) Suppose the input voltage to A
FIGURE 14 |
9 | 3648-3651 | Thus, the output between their common terminals and the centre-
tap of the transformer becomes a full-wave rectifier output (Note that
there is another circuit of full wave rectifier which does not need a centre-
tap transformer but needs four diodes ) Suppose the input voltage to A
FIGURE 14 18 (a) Half-wave rectifier
circuit, (b) Input ac voltage and output
voltage waveforms from the rectifier circuit |
9 | 3649-3652 | (Note that
there is another circuit of full wave rectifier which does not need a centre-
tap transformer but needs four diodes ) Suppose the input voltage to A
FIGURE 14 18 (a) Half-wave rectifier
circuit, (b) Input ac voltage and output
voltage waveforms from the rectifier circuit Rationalised 2023-24
339
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
with respect to the centre tap at any instant
is positive |
9 | 3650-3653 | ) Suppose the input voltage to A
FIGURE 14 18 (a) Half-wave rectifier
circuit, (b) Input ac voltage and output
voltage waveforms from the rectifier circuit Rationalised 2023-24
339
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
with respect to the centre tap at any instant
is positive It is clear that, at that instant,
voltage at B being out of phase will be
negative as shown in Fig |
9 | 3651-3654 | 18 (a) Half-wave rectifier
circuit, (b) Input ac voltage and output
voltage waveforms from the rectifier circuit Rationalised 2023-24
339
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
with respect to the centre tap at any instant
is positive It is clear that, at that instant,
voltage at B being out of phase will be
negative as shown in Fig 14 |
9 | 3652-3655 | Rationalised 2023-24
339
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
with respect to the centre tap at any instant
is positive It is clear that, at that instant,
voltage at B being out of phase will be
negative as shown in Fig 14 19(b) |
9 | 3653-3656 | It is clear that, at that instant,
voltage at B being out of phase will be
negative as shown in Fig 14 19(b) So, diode
D1 gets forward biased and conducts (while
D2 being reverse biased is not conducting) |
9 | 3654-3657 | 14 19(b) So, diode
D1 gets forward biased and conducts (while
D2 being reverse biased is not conducting) Hence, during this positive half cycle we get
an output current (and a output voltage
across the load resistor RL) as shown in
Fig |
9 | 3655-3658 | 19(b) So, diode
D1 gets forward biased and conducts (while
D2 being reverse biased is not conducting) Hence, during this positive half cycle we get
an output current (and a output voltage
across the load resistor RL) as shown in
Fig 14 |
9 | 3656-3659 | So, diode
D1 gets forward biased and conducts (while
D2 being reverse biased is not conducting) Hence, during this positive half cycle we get
an output current (and a output voltage
across the load resistor RL) as shown in
Fig 14 19(c) |
9 | 3657-3660 | Hence, during this positive half cycle we get
an output current (and a output voltage
across the load resistor RL) as shown in
Fig 14 19(c) In the course of the ac cycle
when the voltage at A becomes negative with
respect to centre tap, the voltage at B would
be positive |
9 | 3658-3661 | 14 19(c) In the course of the ac cycle
when the voltage at A becomes negative with
respect to centre tap, the voltage at B would
be positive In this part of the cycle diode
D1 would not conduct but diode D2 would,
giving an output current and output
voltage (across RL) during the negative half
cycle of the input ac |
9 | 3659-3662 | 19(c) In the course of the ac cycle
when the voltage at A becomes negative with
respect to centre tap, the voltage at B would
be positive In this part of the cycle diode
D1 would not conduct but diode D2 would,
giving an output current and output
voltage (across RL) during the negative half
cycle of the input ac Thus, we get output
voltage during both the positive as well as
the negative half of the cycle |
9 | 3660-3663 | In the course of the ac cycle
when the voltage at A becomes negative with
respect to centre tap, the voltage at B would
be positive In this part of the cycle diode
D1 would not conduct but diode D2 would,
giving an output current and output
voltage (across RL) during the negative half
cycle of the input ac Thus, we get output
voltage during both the positive as well as
the negative half of the cycle Obviously,
this is a more efficient circuit for getting
rectified voltage or current than the half-
wave rectifier |
9 | 3661-3664 | In this part of the cycle diode
D1 would not conduct but diode D2 would,
giving an output current and output
voltage (across RL) during the negative half
cycle of the input ac Thus, we get output
voltage during both the positive as well as
the negative half of the cycle Obviously,
this is a more efficient circuit for getting
rectified voltage or current than the half-
wave rectifier The rectified voltage is in the form of
pulses of the shape of half sinusoids |
9 | 3662-3665 | Thus, we get output
voltage during both the positive as well as
the negative half of the cycle Obviously,
this is a more efficient circuit for getting
rectified voltage or current than the half-
wave rectifier The rectified voltage is in the form of
pulses of the shape of half sinusoids Though it is unidirectional it does not have
a steady value |
9 | 3663-3666 | Obviously,
this is a more efficient circuit for getting
rectified voltage or current than the half-
wave rectifier The rectified voltage is in the form of
pulses of the shape of half sinusoids Though it is unidirectional it does not have
a steady value To get steady dc output
from the pulsating voltage normally a
capacitor is connected across the output
terminals (parallel to the load RL) |
9 | 3664-3667 | The rectified voltage is in the form of
pulses of the shape of half sinusoids Though it is unidirectional it does not have
a steady value To get steady dc output
from the pulsating voltage normally a
capacitor is connected across the output
terminals (parallel to the load RL) One can
also use an inductor in series with RL for
the same purpose |
9 | 3665-3668 | Though it is unidirectional it does not have
a steady value To get steady dc output
from the pulsating voltage normally a
capacitor is connected across the output
terminals (parallel to the load RL) One can
also use an inductor in series with RL for
the same purpose Since these additional
circuits appear to filter out the ac ripple
and give a pure dc voltage, so they are
called filters |
9 | 3666-3669 | To get steady dc output
from the pulsating voltage normally a
capacitor is connected across the output
terminals (parallel to the load RL) One can
also use an inductor in series with RL for
the same purpose Since these additional
circuits appear to filter out the ac ripple
and give a pure dc voltage, so they are
called filters Now we shall discuss the role of
capacitor in filtering |
9 | 3667-3670 | One can
also use an inductor in series with RL for
the same purpose Since these additional
circuits appear to filter out the ac ripple
and give a pure dc voltage, so they are
called filters Now we shall discuss the role of
capacitor in filtering When the voltage
across the capacitor is rising, it gets
charged |
9 | 3668-3671 | Since these additional
circuits appear to filter out the ac ripple
and give a pure dc voltage, so they are
called filters Now we shall discuss the role of
capacitor in filtering When the voltage
across the capacitor is rising, it gets
charged If there is no external load, it remains charged to the peak voltage
of the rectified output |
9 | 3669-3672 | Now we shall discuss the role of
capacitor in filtering When the voltage
across the capacitor is rising, it gets
charged If there is no external load, it remains charged to the peak voltage
of the rectified output When there is a load, it gets discharged through
the load and the voltage across it begins to fall |
9 | 3670-3673 | When the voltage
across the capacitor is rising, it gets
charged If there is no external load, it remains charged to the peak voltage
of the rectified output When there is a load, it gets discharged through
the load and the voltage across it begins to fall In the next half-cycle of
rectified output it again gets charged to the peak value (Fig |
9 | 3671-3674 | If there is no external load, it remains charged to the peak voltage
of the rectified output When there is a load, it gets discharged through
the load and the voltage across it begins to fall In the next half-cycle of
rectified output it again gets charged to the peak value (Fig 14 |
9 | 3672-3675 | When there is a load, it gets discharged through
the load and the voltage across it begins to fall In the next half-cycle of
rectified output it again gets charged to the peak value (Fig 14 20) |
9 | 3673-3676 | In the next half-cycle of
rectified output it again gets charged to the peak value (Fig 14 20) The
rate of fall of the voltage across the capacitor depends inversely upon the
product of capacitance C and the effective resistance RL used in the circuit
and is called the time constant |
9 | 3674-3677 | 14 20) The
rate of fall of the voltage across the capacitor depends inversely upon the
product of capacitance C and the effective resistance RL used in the circuit
and is called the time constant To make the time constant large value of
C should be large |
9 | 3675-3678 | 20) The
rate of fall of the voltage across the capacitor depends inversely upon the
product of capacitance C and the effective resistance RL used in the circuit
and is called the time constant To make the time constant large value of
C should be large So capacitor input filters use large capacitors |
9 | 3676-3679 | The
rate of fall of the voltage across the capacitor depends inversely upon the
product of capacitance C and the effective resistance RL used in the circuit
and is called the time constant To make the time constant large value of
C should be large So capacitor input filters use large capacitors The
output voltage obtained by using capacitor input filter is nearer to the
peak voltage of the rectified voltage |
9 | 3677-3680 | To make the time constant large value of
C should be large So capacitor input filters use large capacitors The
output voltage obtained by using capacitor input filter is nearer to the
peak voltage of the rectified voltage This type of filter is most widely
used in power supplies |
9 | 3678-3681 | So capacitor input filters use large capacitors The
output voltage obtained by using capacitor input filter is nearer to the
peak voltage of the rectified voltage This type of filter is most widely
used in power supplies FIGURE 14 |
9 | 3679-3682 | The
output voltage obtained by using capacitor input filter is nearer to the
peak voltage of the rectified voltage This type of filter is most widely
used in power supplies FIGURE 14 19 (a) A Full-wave rectifier
circuit; (b) Input wave forms given to the
diode D1 at A and to the diode D2 at B;
(c) Output waveform across the
load RL connected in the full-wave
rectifier circuit |
9 | 3680-3683 | This type of filter is most widely
used in power supplies FIGURE 14 19 (a) A Full-wave rectifier
circuit; (b) Input wave forms given to the
diode D1 at A and to the diode D2 at B;
(c) Output waveform across the
load RL connected in the full-wave
rectifier circuit Rationalised 2023-24
Physics
340
FIGURE 14 |
9 | 3681-3684 | FIGURE 14 19 (a) A Full-wave rectifier
circuit; (b) Input wave forms given to the
diode D1 at A and to the diode D2 at B;
(c) Output waveform across the
load RL connected in the full-wave
rectifier circuit Rationalised 2023-24
Physics
340
FIGURE 14 20 (a) A full-wave rectifier with capacitor filter, (b) Input and output
voltage of rectifier in (a) |
9 | 3682-3685 | 19 (a) A Full-wave rectifier
circuit; (b) Input wave forms given to the
diode D1 at A and to the diode D2 at B;
(c) Output waveform across the
load RL connected in the full-wave
rectifier circuit Rationalised 2023-24
Physics
340
FIGURE 14 20 (a) A full-wave rectifier with capacitor filter, (b) Input and output
voltage of rectifier in (a) SUMMARY
1 |
9 | 3683-3686 | Rationalised 2023-24
Physics
340
FIGURE 14 20 (a) A full-wave rectifier with capacitor filter, (b) Input and output
voltage of rectifier in (a) SUMMARY
1 Semiconductors are the basic materials used in the present solid state
electronic devices like diode, transistor, ICs, etc |
9 | 3684-3687 | 20 (a) A full-wave rectifier with capacitor filter, (b) Input and output
voltage of rectifier in (a) SUMMARY
1 Semiconductors are the basic materials used in the present solid state
electronic devices like diode, transistor, ICs, etc 2 |
9 | 3685-3688 | SUMMARY
1 Semiconductors are the basic materials used in the present solid state
electronic devices like diode, transistor, ICs, etc 2 Lattice structure and the atomic structure of constituent elements
decide whether a particular material will be insulator, metal or
semiconductor |
9 | 3686-3689 | Semiconductors are the basic materials used in the present solid state
electronic devices like diode, transistor, ICs, etc 2 Lattice structure and the atomic structure of constituent elements
decide whether a particular material will be insulator, metal or
semiconductor 3 |
9 | 3687-3690 | 2 Lattice structure and the atomic structure of constituent elements
decide whether a particular material will be insulator, metal or
semiconductor 3 Metals have low resistivity (10–2 to 10–8 Wm), insulators have very high
resistivity (>108 W m–1), while semiconductors have intermediate values
of resistivity |
9 | 3688-3691 | Lattice structure and the atomic structure of constituent elements
decide whether a particular material will be insulator, metal or
semiconductor 3 Metals have low resistivity (10–2 to 10–8 Wm), insulators have very high
resistivity (>108 W m–1), while semiconductors have intermediate values
of resistivity 4 |
9 | 3689-3692 | 3 Metals have low resistivity (10–2 to 10–8 Wm), insulators have very high
resistivity (>108 W m–1), while semiconductors have intermediate values
of resistivity 4 Semiconductors are elemental (Si, Ge) as well as compound (GaAs,
CdS, etc |
9 | 3690-3693 | Metals have low resistivity (10–2 to 10–8 Wm), insulators have very high
resistivity (>108 W m–1), while semiconductors have intermediate values
of resistivity 4 Semiconductors are elemental (Si, Ge) as well as compound (GaAs,
CdS, etc ) |
9 | 3691-3694 | 4 Semiconductors are elemental (Si, Ge) as well as compound (GaAs,
CdS, etc ) 5 |
9 | 3692-3695 | Semiconductors are elemental (Si, Ge) as well as compound (GaAs,
CdS, etc ) 5 Pure semiconductors are called ‘intrinsic semiconductors’ |
9 | 3693-3696 | ) 5 Pure semiconductors are called ‘intrinsic semiconductors’ The presence
of charge carriers (electrons and holes) is an ‘intrinsic’ property of the
material and these are obtained as a result of thermal excitation |
9 | 3694-3697 | 5 Pure semiconductors are called ‘intrinsic semiconductors’ The presence
of charge carriers (electrons and holes) is an ‘intrinsic’ property of the
material and these are obtained as a result of thermal excitation The
number of electrons (ne) is equal to the number of holes (nh ) in intrinsic
conductors |
9 | 3695-3698 | Pure semiconductors are called ‘intrinsic semiconductors’ The presence
of charge carriers (electrons and holes) is an ‘intrinsic’ property of the
material and these are obtained as a result of thermal excitation The
number of electrons (ne) is equal to the number of holes (nh ) in intrinsic
conductors Holes are essentially electron vacancies with an effective
positive charge |
9 | 3696-3699 | The presence
of charge carriers (electrons and holes) is an ‘intrinsic’ property of the
material and these are obtained as a result of thermal excitation The
number of electrons (ne) is equal to the number of holes (nh ) in intrinsic
conductors Holes are essentially electron vacancies with an effective
positive charge 6 |
9 | 3697-3700 | The
number of electrons (ne) is equal to the number of holes (nh ) in intrinsic
conductors Holes are essentially electron vacancies with an effective
positive charge 6 The number of charge carriers can be changed by ‘doping’ of a suitable
impurity in pure semiconductors |
9 | 3698-3701 | Holes are essentially electron vacancies with an effective
positive charge 6 The number of charge carriers can be changed by ‘doping’ of a suitable
impurity in pure semiconductors Such semiconductors are known as
extrinsic semiconductors |
9 | 3699-3702 | 6 The number of charge carriers can be changed by ‘doping’ of a suitable
impurity in pure semiconductors Such semiconductors are known as
extrinsic semiconductors These are of two types (n-type and p-type) |
9 | 3700-3703 | The number of charge carriers can be changed by ‘doping’ of a suitable
impurity in pure semiconductors Such semiconductors are known as
extrinsic semiconductors These are of two types (n-type and p-type) 7 |
9 | 3701-3704 | Such semiconductors are known as
extrinsic semiconductors These are of two types (n-type and p-type) 7 In n-type semiconductors, ne >> nh while in p-type semiconductors nh >> ne |
9 | 3702-3705 | These are of two types (n-type and p-type) 7 In n-type semiconductors, ne >> nh while in p-type semiconductors nh >> ne 8 |
9 | 3703-3706 | 7 In n-type semiconductors, ne >> nh while in p-type semiconductors nh >> ne 8 n-type semiconducting Si or Ge is obtained by doping with pentavalent
atoms (donors) like As, Sb, P, etc |
9 | 3704-3707 | In n-type semiconductors, ne >> nh while in p-type semiconductors nh >> ne 8 n-type semiconducting Si or Ge is obtained by doping with pentavalent
atoms (donors) like As, Sb, P, etc , while p-type Si or Ge can be obtained
by doping with trivalent atom (acceptors) like B, Al, In etc |
9 | 3705-3708 | 8 n-type semiconducting Si or Ge is obtained by doping with pentavalent
atoms (donors) like As, Sb, P, etc , while p-type Si or Ge can be obtained
by doping with trivalent atom (acceptors) like B, Al, In etc 9 |
9 | 3706-3709 | n-type semiconducting Si or Ge is obtained by doping with pentavalent
atoms (donors) like As, Sb, P, etc , while p-type Si or Ge can be obtained
by doping with trivalent atom (acceptors) like B, Al, In etc 9 nenh = ni
2 in all cases |
9 | 3707-3710 | , while p-type Si or Ge can be obtained
by doping with trivalent atom (acceptors) like B, Al, In etc 9 nenh = ni
2 in all cases Further, the material possesses an overall charge
neutrality |
9 | 3708-3711 | 9 nenh = ni
2 in all cases Further, the material possesses an overall charge
neutrality 10 |
9 | 3709-3712 | nenh = ni
2 in all cases Further, the material possesses an overall charge
neutrality 10 There are two distinct band of energies (called valence band and
conduction band) in which the electrons in a material lie |
9 | 3710-3713 | Further, the material possesses an overall charge
neutrality 10 There are two distinct band of energies (called valence band and
conduction band) in which the electrons in a material lie Valence
band energies are low as compared to conduction band energies |
9 | 3711-3714 | 10 There are two distinct band of energies (called valence band and
conduction band) in which the electrons in a material lie Valence
band energies are low as compared to conduction band energies All
energy levels in the valence band are filled while energy levels in the
conduction band may be fully empty or partially filled |
9 | 3712-3715 | There are two distinct band of energies (called valence band and
conduction band) in which the electrons in a material lie Valence
band energies are low as compared to conduction band energies All
energy levels in the valence band are filled while energy levels in the
conduction band may be fully empty or partially filled The electrons in
the conduction band are free to move in a solid and are responsible for
the conductivity |
9 | 3713-3716 | Valence
band energies are low as compared to conduction band energies All
energy levels in the valence band are filled while energy levels in the
conduction band may be fully empty or partially filled The electrons in
the conduction band are free to move in a solid and are responsible for
the conductivity The extent of conductivity depends upon the energy
gap (Eg) between the top of valence band (EV ) and the bottom of the
conduction band EC |
9 | 3714-3717 | All
energy levels in the valence band are filled while energy levels in the
conduction band may be fully empty or partially filled The electrons in
the conduction band are free to move in a solid and are responsible for
the conductivity The extent of conductivity depends upon the energy
gap (Eg) between the top of valence band (EV ) and the bottom of the
conduction band EC The electrons from valence band can be excited by
Rationalised 2023-24
341
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
heat, light or electrical energy to the conduction band and thus, produce
a change in the current flowing in a semiconductor |
9 | 3715-3718 | The electrons in
the conduction band are free to move in a solid and are responsible for
the conductivity The extent of conductivity depends upon the energy
gap (Eg) between the top of valence band (EV ) and the bottom of the
conduction band EC The electrons from valence band can be excited by
Rationalised 2023-24
341
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
heat, light or electrical energy to the conduction band and thus, produce
a change in the current flowing in a semiconductor 11 |
9 | 3716-3719 | The extent of conductivity depends upon the energy
gap (Eg) between the top of valence band (EV ) and the bottom of the
conduction band EC The electrons from valence band can be excited by
Rationalised 2023-24
341
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
heat, light or electrical energy to the conduction band and thus, produce
a change in the current flowing in a semiconductor 11 For insulators Eg > 3 eV, for semiconductors Eg is 0 |
9 | 3717-3720 | The electrons from valence band can be excited by
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341
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
heat, light or electrical energy to the conduction band and thus, produce
a change in the current flowing in a semiconductor 11 For insulators Eg > 3 eV, for semiconductors Eg is 0 2 eV to 3 eV, while
for metals Eg » 0 |
9 | 3718-3721 | 11 For insulators Eg > 3 eV, for semiconductors Eg is 0 2 eV to 3 eV, while
for metals Eg » 0 12 |
9 | 3719-3722 | For insulators Eg > 3 eV, for semiconductors Eg is 0 2 eV to 3 eV, while
for metals Eg » 0 12 p-n junction is the ‘key’ to all semiconductor devices |
9 | 3720-3723 | 2 eV to 3 eV, while
for metals Eg » 0 12 p-n junction is the ‘key’ to all semiconductor devices When such a
junction is made, a ‘depletion layer’ is formed consisting of immobile
ion-cores devoid of their electrons or holes |
9 | 3721-3724 | 12 p-n junction is the ‘key’ to all semiconductor devices When such a
junction is made, a ‘depletion layer’ is formed consisting of immobile
ion-cores devoid of their electrons or holes This is responsible for a
junction potential barrier |
9 | 3722-3725 | p-n junction is the ‘key’ to all semiconductor devices When such a
junction is made, a ‘depletion layer’ is formed consisting of immobile
ion-cores devoid of their electrons or holes This is responsible for a
junction potential barrier 13 |
9 | 3723-3726 | When such a
junction is made, a ‘depletion layer’ is formed consisting of immobile
ion-cores devoid of their electrons or holes This is responsible for a
junction potential barrier 13 By changing the external applied voltage, junction barriers can be
changed |
9 | 3724-3727 | This is responsible for a
junction potential barrier 13 By changing the external applied voltage, junction barriers can be
changed In forward bias (n-side is connected to negative terminal of the
battery and p-side is connected to the positive), the barrier is decreased
while the barrier increases in reverse bias |
9 | 3725-3728 | 13 By changing the external applied voltage, junction barriers can be
changed In forward bias (n-side is connected to negative terminal of the
battery and p-side is connected to the positive), the barrier is decreased
while the barrier increases in reverse bias Hence, forward bias current
is more (mA) while it is very small (mA) in a p-n junction diode |
9 | 3726-3729 | By changing the external applied voltage, junction barriers can be
changed In forward bias (n-side is connected to negative terminal of the
battery and p-side is connected to the positive), the barrier is decreased
while the barrier increases in reverse bias Hence, forward bias current
is more (mA) while it is very small (mA) in a p-n junction diode 14 |
9 | 3727-3730 | In forward bias (n-side is connected to negative terminal of the
battery and p-side is connected to the positive), the barrier is decreased
while the barrier increases in reverse bias Hence, forward bias current
is more (mA) while it is very small (mA) in a p-n junction diode 14 Diodes can be used for rectifying an ac voltage (restricting the ac voltage
to one direction) |
9 | 3728-3731 | Hence, forward bias current
is more (mA) while it is very small (mA) in a p-n junction diode 14 Diodes can be used for rectifying an ac voltage (restricting the ac voltage
to one direction) With the help of a capacitor or a suitable filter, a dc
voltage can be obtained |
9 | 3729-3732 | 14 Diodes can be used for rectifying an ac voltage (restricting the ac voltage
to one direction) With the help of a capacitor or a suitable filter, a dc
voltage can be obtained POINTS TO PONDER
1 |
9 | 3730-3733 | Diodes can be used for rectifying an ac voltage (restricting the ac voltage
to one direction) With the help of a capacitor or a suitable filter, a dc
voltage can be obtained POINTS TO PONDER
1 The energy bands (EC or EV) in the semiconductors are space delocalised
which means that these are not located in any specific place inside the
solid |
9 | 3731-3734 | With the help of a capacitor or a suitable filter, a dc
voltage can be obtained POINTS TO PONDER
1 The energy bands (EC or EV) in the semiconductors are space delocalised
which means that these are not located in any specific place inside the
solid The energies are the overall averages |
9 | 3732-3735 | POINTS TO PONDER
1 The energy bands (EC or EV) in the semiconductors are space delocalised
which means that these are not located in any specific place inside the
solid The energies are the overall averages When you see a picture in
which EC or EV are drawn as straight lines, then they should be
respectively taken simply as the bottom of conduction band energy levels
and top of valence band energy levels |
9 | 3733-3736 | The energy bands (EC or EV) in the semiconductors are space delocalised
which means that these are not located in any specific place inside the
solid The energies are the overall averages When you see a picture in
which EC or EV are drawn as straight lines, then they should be
respectively taken simply as the bottom of conduction band energy levels
and top of valence band energy levels 2 |
9 | 3734-3737 | The energies are the overall averages When you see a picture in
which EC or EV are drawn as straight lines, then they should be
respectively taken simply as the bottom of conduction band energy levels
and top of valence band energy levels 2 In elemental semiconductors (Si or Ge), the n-type or p-type
semiconductors are obtained by introducing ‘dopants’ as defects |
9 | 3735-3738 | When you see a picture in
which EC or EV are drawn as straight lines, then they should be
respectively taken simply as the bottom of conduction band energy levels
and top of valence band energy levels 2 In elemental semiconductors (Si or Ge), the n-type or p-type
semiconductors are obtained by introducing ‘dopants’ as defects In
compound semiconductors, the change in relative stoichiometric ratio
can also change the type of semiconductor |
9 | 3736-3739 | 2 In elemental semiconductors (Si or Ge), the n-type or p-type
semiconductors are obtained by introducing ‘dopants’ as defects In
compound semiconductors, the change in relative stoichiometric ratio
can also change the type of semiconductor For example, in ideal GaAs
the ratio of Ga:As is 1:1 but in Ga-rich or As-rich GaAs it could
respectively be Ga1 |
9 | 3737-3740 | In elemental semiconductors (Si or Ge), the n-type or p-type
semiconductors are obtained by introducing ‘dopants’ as defects In
compound semiconductors, the change in relative stoichiometric ratio
can also change the type of semiconductor For example, in ideal GaAs
the ratio of Ga:As is 1:1 but in Ga-rich or As-rich GaAs it could
respectively be Ga1 1 As0 |
9 | 3738-3741 | In
compound semiconductors, the change in relative stoichiometric ratio
can also change the type of semiconductor For example, in ideal GaAs
the ratio of Ga:As is 1:1 but in Ga-rich or As-rich GaAs it could
respectively be Ga1 1 As0 9 or Ga0 |
Subsets and Splits