nopperl/arxiv-image-text · Datasets at Hugging Face

dedup-isc-ft-v107-score float64 0.32 1	uid stringlengths 32 32	text stringlengths 0 32.5k	paper_id stringlengths 1 14	original_image_filename stringlengths 5 222
0.564189	c92acb70768f41ed991349315f36d0d6	Plot of the distribution of the correlation statistic ⟨ C ⟩ obtained from analysing images obtained by simulation (e.g. fig.<ref>). Probability of a certain value of the correlation statistic ⟨ C ⟩, P, is plotted against ⟨ C ⟩.	cond	mat0308330-finsimChist.jpg
0.476363	2813d3907f0144c8abc76f1f87fcb0dd	Width distribution obtained from simulation images (like fig.<ref>). Probability of a particular width, P(W), is plotted against the width, W, in nanometers.	cond	mat0308330-finsimwd.jpg
0.484578	553a9f266705499ba69f719d86785b4b	TEM image of gold nanoclusters on PS-b-PMMA template. The bright spherical structures are the gold nanoclusters which lie on the PS domain. It is to be noted that the gold is present both at the surface and in the bulk of the PS domain in the form of spherical clusters. Courtesy of W. Lopes and H. Jaeger.	cond	mat0308330-nanochainau3.jpg
0.405851	bc83f549991d4ec7ad4073839ce9e1e4	TEM image of silver nanowires on PS-b-PMMA template. The darker contiguous structures bounded by a dark border are the silver wires and the lighter regions inbetween are PMMA regions not covered by the silver. PS domains are underneath the silver wires. Different shades of gray in the wire regions show different nano-crystalline orientation. Courtesy of W. Lopes and H. Jaeger.	cond	mat0308330-nanwireag3.jpg
0.48078	6b5dd54f27584123a10dc87ad922c811	Binary image of the “wire” and “river” regions obtained by simulation. The lighter areas represent regions where silver is present (the “wires”). The darker area represents the exposed PMMA “river” region.	cond	mat0308330-postsmoothsim13.jpg
0.590701	b7baac610cd345af9becd0e7b7b7ab3f	Width distribution obtained from the experimental TEM images.	cond	mat0308330-wd1.jpg
0.546055	7af7e898440d4375b0b7ced604c16d57	The stairs of reduction, step by step.	cond	mat0308331-fig1.jpg
0.517155	5468f7bd4a884a649649a960466ce9b3	The stepwise construction of the film for dissipative system. First-order models: The motion along the defect of invariance.	cond	mat0308331-fig10.jpg
0.456587	1305f63812164ba5a831da3bf558d2ec	The stepwise construction of the film for dissipative system. Finite second-order models: The motion starts in the direction of the defect of invariance, and stops when the direction of motion becomes orthogonal to the defect of invariance.	cond	mat0308331-fig11.jpg
0.464999	d68e3c67f29849828763d2db5f6a6e08	The definition of the second-order models.	cond	mat0308331-fig12.jpg
0.47288	acdd032eef2d4476ae1c58d4951c73d2	Relations between a microscopic state f, the corresponding macroscopic state M=m(f), and quasiequilibria f^*_M.	cond	mat0308331-fig2.jpg
0.429307	89db918ca8484342a6ee6db8f4de471e	Quasiequilibrium manifold Ω, tangent space T_f^_MΩ, quasiequilibrium projector π_f^_M, and defect of invariance, Δ=Δ_f^_M=J-π_f^_M(J).	cond	mat0308331-fig3.jpg
0.558024	ac58a6ec79e14bee995f367a553fec1b	Ehrenfest's chain over the quasiequilibrium manifold, and trajectory of the macroscopic dynamics, Ṁ=F(M).	cond	mat0308331-fig5.jpg
0.471828	4145fd4a8a1443deaa4d3fc788b93198	Projection of segments of trajectories: The microscopic motion above the manifold Ω and the macroscopic motion on this manifold. If these motions began in the same point on Ω, then, after time τ, projection of the microscopic state onto Ω should coincide with the result of the macroscopic motion on Ω. For quasiequilibrium Ω projector π: E →Ω acts as π(f)=f^*_m(f).	cond	mat0308331-fig6.jpg
0.477376	4d934beee2db44c6ae34e49e62461c03	The film of nonequilibrium states as the trajectory of motion of the quasiequilibrium manifold due to microscopic dynamics.	cond	mat0308331-fig7.jpg
0.509788	03ec3b1bce3d4cfc9b1354b08362cd06	Dynamics on the film: Ṁ = mJ(q_M,τ), τ̇= -D_fS\|_q_M,τ D_Mq_M,τṀ D_fS\|_q_M,τD_τq_M,τ.	cond	mat0308331-fig9.jpg
0.436224	ea019287f12e4f7d8681f2599e105e88	Examples of closed surfaces R_1(T^2_xy) which are cut by the R_Y-R_Z-plane. The monopole is at the origin. t=d_z= 1, μ=-5: (a)k_z=0, (b)k_z=-2 π/5.	cond	mat0308332-fig1.jpg
0.449433	6dc901949415485d80c41efd3b6f1244	The magnetothermopower for heat current along the a direction is shown for T=1.4 K, T=4.8 K ,T=5.8 K and T=6.9 K from top to bottom, the circles denote the experimental data from Ref. <cit.>, the solid line is our fit based on Eq. (<ref>).	cond	mat0308335-choi4a.jpg
0.454874	f79c4a5654a94eab965fd096c3c7cb5a	The Nernst signal for heat current along the a direction is shown for T=1.4 K and T=4.8 K (from bottom to top), the dashed lines with circles denote the experimental data from Ref. <cit.>, the solid line is our fit based on Eq. (<ref>).	cond	mat0308335-choi5a.jpg
0.479824	c0d76d47b3124a5f90809794cc62d430	The temperature dependence of the magnetothermopower for heat current along the a direction is shown for B=12 T, the circles denote the experimental data from Ref. <cit.>, the solid line is our fit based on Eq. (<ref>).	cond	mat0308335-choi6a12.jpg
0.505058	48ace9d23cae4d9d95ab701b7dd41a48	Schematics of the adsorption sites for Mg atom on Si(001) surface from three different views. The symbols stand for: b=bridge, p=pedestal, h=hallow, s=shallow and c=cave. (The dimers are shown symmetric here for visual convenience)	cond	mat0308351-1.jpg
0.485419	69dcd37b95274e45a7ef6fe5c156c259	Typical configurations of an ensemble of collapsing chains at an intermediate time (L/L_p = 8, u_0 = 1.25 kT/a).	cond	mat0308356-Fig1.jpg
0.428152	e4d17c36e8e04f669c838d5c52ed9daa	Comparison between time series of end to end distance R and total energy for direct formation of toroid and formation through intermediate states.	cond	mat0308356-Fig2.jpg
0.466581	1538df0d11ab42d391ec0ba2dd792c26	Time series of total energy for an ensemble of molecules, with labels of the corresponding configurations and actual shape of (a) 1 head (b) 2 heads (c) 5 heads racquets and (d) torus.	cond	mat0308356-Fig3.jpg
0.433244	ce19a96fe65f4af2b89417f3985acd88	(a) Actual shape, (b) correlation matrix and (c) spatial covariogram (with fitting curve) for (1) an uncollapsed molecule, (2) a metastable racquet-head shape and (3) a stable torus.	cond	mat0308356-Fig4.jpg
0.444755	2cda62e6b81d44b9b46d373701c09d3e	Masterplot of the decay rate of uncollapsed molecules.	cond	mat0308356-Fig5.jpg
0.400514	31623ef109a544e296cd4e6cb067dc3d	(a) Metastable racquet-headed state for a phantom chain and (b) corresponding correlation matrix. Inset in (a): energy traces in time for collapsing phantom chains.	cond	mat0308356-Fig6.jpg
0.518698	d4e5668d60f24808a575faa892a9efd5	Plot of the decay rate D_ vs. Wi for L/L_p = 3, 5, 8, ũ_0 = 1 kT and R_ = 10/3.	cond	mat0308356-Fig7.jpg
0.562993	bd272f421c1941b38e6cbe281c191a8a	Collapsed configurations of semiflexible chains in shear flow at Wi = 10; (a) L/L_p = 8, (b) L/L_p = 5.	cond	mat0308356-Fig8.jpg
0.440049	3f36548482ac483f8eb2f832ff90c3f7	Crystal structure of β-vanadium bronze A_xV_2O_5. Schematic drawing of the V1 zigzag chain and the V2 ladder is also shown.	cond	mat0308368-Fig1.jpg
0.49378	0845cd26229346688f886a1a846a1d05	Normal emission spectra of β-Na_0.33V_2O_5 taken at 160 K.	cond	mat0308368-Fig2.jpg
0.421064	fd4c43f283af4fe28e77d169f618a037	ARPES spectra of β-Na_0.33V_2O_5 taken at 160 K. The vertical lines indicate peak positions or inflection points.	cond	mat0308368-Fig3.jpg
0.442656	a5a17f5ca6694e74b748cdf67e76bb00	(a) Intensity plot of ARPES spectra near E_F in the E-k plane. The vertical arrows indicate k = ±π/4b. (b) Momentum distribution curves. Dashed curves are fitted Lorentzians and the vertical lines indicate their peak positions. (c) Energy distribution curves.	cond	mat0308368-Fig4.jpg
0.48764	00bfb36549994ebdbc999d544f2a9860	A possible scheme for measuring dynamic structure function by SBS. The laser photon with momentum 𝐤_1 is scattered into a photon with momentum 𝐤_3 transferring a momentum 𝐪 = 𝐤_1 - 𝐤_3 to the atoms along the x axis, while the laser photon with momentum 𝐤_3 is scattered into a photon with momentum 𝐤_2 transferring a momentum -𝐪 = 𝐤_3 - 𝐤_2 to the atoms. The frequencies of the three laser beams are chosen such that the energy transfer δ = (ω_1 - ω_3) = (ω_3 - ω_2) > 0. A pair of atoms which may form a Cooper pair having mutually opposite momenta are scattered equally. The one-dimensional (along the x direction) momentum and density distribution of the gas can be determined from the analysis of time of flight images. The spectrum (number of scattered atoms versus δ for different 𝐪 values) may reveal the existence of the gap and the detailed comparison of the spectra for different relative densities of the two components may provide a proof of IG superfluidity.	cond	mat0308369-dia1.jpg
0.535713	f7e7966407ff4352883b5158bb9cb160	Right hand side (RHS) of gap Eq. (<ref>) is plotted vs Δ \|a_ eff\| for different values of difference in chemical potential δ_ν. The gap is given by the condition RHS=1. The solid, dotted dashed-dotted and dashed lines correspond to δ_ν \|a_ eff\|=0, 0.25, 0.35 and 0.45, respectively. For δ_ν \|a_ eff\|=0.45, two solutions for gap exists. The smaller value corresponds to “IG state" and the larger one corresponds to usual Bardeen-Cooper-Schrieffer state.	cond	mat0308369-fig1.jpg
0.437928	bed0627f3675455a902418dee9f8b447	(a) The gap (in unit of E_F) as a function of k_0\|a_ eff\|. (b) The gap as a function of ratio (ρ_1/ρ_2) of the two densities. Average occupation numbers n_1(k) and n_2(k) as functions of k are shown in (c) and (d), respectively, for the parameters k_0\|a_ eff\|=1.5 and ρ_1/ρ_2=1.4.	cond	mat0308369-fig2.jpg
0.422599	60e86e84cc104ee8afed915ba7b13b48	ln[e(E)/e(0)] as a function of E^2/E_c^*2 for different ωτ and ω_cτ calculated after Eqs. (<ref>), (<ref>) and (<ref>) for a magnetic field normal to the electric field; ω and ω_c are the radiation frequency and the cyclotron frequency, respectively. Here the parameter ωτ controls the frequency dependence of tunneling while ω_cτ reflects the influence of the magnetic field.	cond	mat0308370-fig1.jpg
0.457417	98cb3af0612b4284a4c5e6779ca4e23e	Photoconductive signal for Ge:Hg as a function of E^2 for different magnetic field strengths B_x and orientations.	cond	mat0308370-fig2.jpg
0.506105	510ee01910b647eaa181fb89e9a736e1	Photoconductive signal as a function of magnetic field strength for two polarizations: E⊥ B_x and E∥ B_x in the high-frequency limit (ωτ > 1).	cond	mat0308370-fig3.jpg
0.550482	156970c316234770a4022e8d54eba791	Photoconductive signal as a function of magnetic field strength for two polarizations: E⊥ B_x and E∥ B_x in the quasi-static limit (ωτ<1)	cond	mat0308370-fig4.jpg
0.483894	d2704ecaa5364c0b9e10b05f1a947c05	The Hall (a) and longitudinal (b) resistivities of In_0.2Ga_0.8As/GaAs quantum well as a function of magnetic field at selected temperatures.	cond	mat0308371-Fig01.jpg
0.430437	9899eefe8c4b4cc09a0689e4671461b1	The longitudinal resistivity ρ_xx as a function of filling factor ν at temperatures 1.07, 0.80, 0.60, 0.45, 0.34, 0.26, 0.19, 0.142, 0.107 and 0.080 K for the InGaAs/GaAs QW. The crossing point indicates the PI transition. Near the critical point the resistivity ρ_xx obeys Eq.(1). The carrier density n = 2.0 × 10^11 cm^-2. Inset: temperature dependence of the fitting parameter 1/ν_0 (open symbols) for two different values of carrier densities as indicated. Solid lines represent linear fits.	cond	mat0308371-Fig02.jpg
0.416401	0fc7b787fb4c44358a8c129f75625295	The ρ_xx data for the InGaAs/GaAs QW (B_c = 15.7 T) from Fig. <ref>, plotted versus Δν in the insulating (a) and quantum Hall phase (b). The axis are rescaled to illustrate the validity of Eq. <ref>. Equally spaced parallel lines signify scaling.	cond	mat0308371-Fig03.jpg
0.509912	860e8429d53242fe9c9e1543e0adf517	The field dependence of the Hall resistivity ρ_H(B) near the critical field B_c at three different temperatures as indicated. Inset: the deviation of ρ_H from the quantized value h/e^2 at critical field B_c versus T.	cond	mat0308371-Fig04.jpg
0.527618	cbf03598723e46f9b84b136a0ebf25b7	Spectral density or b-DOS ρ_b(ω) for various values of doping x and temperature T. The effective ℓ polaron level is marked as a vertical line. Parameters chosen are E_JT = -0.5 eV, D_o=1.2 eV , U̅ = 5.0 eV J_F = 2.23 meV. (a) x=0.1, T=0, μ = -E_JT; ferromagnetic insulator. (b) x=0.3, T=180 K (< T_c = 240K); ferromagnetic metal. (c) x=0.3, T=350 K ; paramagnetic insulator. Full(dotted) lines correspond to up(down) spin DOS. Occupied band states are shown shaded.	cond	mat0308376-FIG1.jpg
0.522478	fb1d6fdaf2d6477aab92278bb452cdc7	The resistivity ρ(T) of La_1-xCa_xMnO_3 (x=0.33) as a function of temperature T. Calculated (full lines for realistic anisotropic hopping, dotted lines for a semicircular DOS) and experimental (circles, from ref.<cit.>) results for H = 0 and 7 Tesla are shown. Parameters, chosen to fit T_c and ρ(T_c), are E_JT= -0.5 eV(SDOS),-0.6 eV(RDOS), 2D_o= 2.4 eV (SDOS), 2.44 eV (RDOS), U̅ = 5 eV, and J_F= 2.37 meV.	cond	mat0308376-FIG2.jpg
0.415608	04be0fa732cf4f4e883898db78af84b6	Fig. 1. Ratio of the effective and bare masses, m^*/m, vs. carrier concentration n. The solid line represents the theoretical formula (<ref>), which is the same as Eq. (8) in Ref. <cit.>. The points represent the experimental data for Si-MOSFET from Fig. 27 of Ref. <cit.>, obtained from the Shubnikov-de Haas oscillation (SdH, squares) and from the spin-polarizing parallel magnetic field (B_, circles).	cond	mat0308380-fig1.jpg
0.423613	4bf415009b944e02a7a053b62dbe486d	Fig. 2. (m/m^-1)^-2 vs. n. The parameters in Eq.(<ref>) are determined by the slope and the offset of the linear fit: n_c=0.7×10^-11 cm^-2 and C_3=0.46. The effective mass m^ diverges at n_∞=0.9×10^-11 cm^-2, where the straight line crosses level 1 shown by the horizontal line.	cond	mat0308380-fig2.jpg
0.500764	f70a3f84269543fca956f49b4366cdd4	(color online) Schematic picture of a two-dimensional pumping contour, crossing the resonance line at two resonance points (B and D). The transmission is maximal at the point M.	cond	mat0308382-fig1.jpg
0.421023	d76afab55e6647098cebef322a66d42e	(color online) (a) The pumping contour A-B-C-D-A and the resonance line B-D for the single level turnstile model<cit.>. (b) Interpretation of the pumping cycle on an energy diagram. A: The effective energy level E_0 is above the chemical potential μ, the dot is empty. B: Loading process with preference to the left-coming electrons. C: The level E_0 is below μ, the dot is occupied. D: Unloading process with preference to the right-going electrons. The asymmetry between B and D creates the non-vanishing total pumped charge. The arrows indicate schematically the direction and the relative magnitude of the current pulses caused by each resonance.	cond	mat0308382-fig2.jpg
0.472807	4b9bd49f341a4ec2827d0de06f3dcf72	(color online) Pumped charge (in units of e) as a function of δ for X_1=1/50, X_2=1/5 and κ a = π /20, calculated within the resonance approximation (Q^R, blue continuous line) and exactly (Q, dashed line). Thick bars on the δ axis mark the resonance widths ±Γ/J around the special points δ_1,2,3, where deviations from the the exact result are anticipated. Inset: Absolute error of the resonance approximation, (Q^R-Q)/e, for the same values of δ. The thick dotted line corresponds to Q^R calculated from the transmission maxima, see text for details.	cond	mat0308382-fig3.jpg
0.528564	055fbcfca9774a8a9ed5aba5fe2db6dc	Time traces of the transmission coefficient 𝒯_lr along the pumping contour for six values of δ, increasing with constant intervals from top to bottom. Two complementary resonances B and D (marked with arrows) are observed for δ_1 < δ < δ_3 when the pumping contour crosses the resonance line (cf. Fig. <ref>a). Thick bars on the δ-axis mark the regions where the loading/unloading pumping mechanism fails.	cond	mat0308382-fig4.jpg
0.493852	cb8d84d5f21e44d8b7334bd853c41bec	MR of a representative sample as fabricated (a) and after further etching (b). The inset in (a) shows the MR of a wire without constrictions, whereas the inset in (b) shows that the MR is reduced exponentially with bias voltage.	cond	mat0308385-Figure2.jpg
0.482101	7c5054dbcd8e494a84bed38a15f416d3	(b) MR in a sample with tunnel barriers at the constrictions. The top panel (a) depicts schematically the tunneling events taking place in the sample.	cond	mat0308385-Figure3.jpg
0.478258	cb8de9851b9241d4b7c325104bc769ea	False-color SEM picture (side-view) of a double constriction showing part of the outer wires with the voltage leads. Note the resist that is still present on the wire. The insets show the relative magnetization of the parts (left) and the resulting schematic MR trace for sweep-up (solid line) and sweep-down (dashed line).	cond	mat0308385-fig1e.jpg
0.439192	de6af0c9461248c48f799e642fd6061f	Total Gilbert damping coefficient α, interband contribution α_ inter, and intraband contribution α_ intra as a function quasiparticle life-time broadening Γ for a carrier density of 0.5 nm^-3 and x=8%.	cond	mat0308386-fig1.jpg
0.412988	34807edeb4394bbd8a81fd44e3ed861f	Gilbert damping coefficient α as a function of carrier density for x=2% – 8% and for quasiparticle life-time broadening of 150 meV (a) and 50 meV (b).	cond	mat0308386-fig2_b.jpg
0.445457	bf89e9919ed643b7abf02c94366d5bd8	Experimental peak-to-peak FMR linewidth in as-grown (filled symbols) and annealed (open symbols) Ga_0.92Mn_0.08As samples measured as a function of temperature for [001] and [110] dc magnetic field orientations (main plot) and as a function of the field angle at 4 Kelvin (inset).	cond	mat0308386-fig3.jpg
0.500632	b38711b0c726471b8f856aa9e8192e2e	Schematic diagrams for the resonant tunneling through (a) a single interacting QD and (b) a coherently coupled QDs.	cond	mat0308387-fig1.jpg
0.492113	ce342277a4564af196f0f0b27ea6e482	The same as Fig. 9 but for the case of ϵ_d=-5.	cond	mat0308387-fig10.jpg
0.496819	17e09af6774f47b79fb10547d1307646	Nonequilibrium occupation numbers n_↑, n_↓, and ρ_dd (a,b), and tunneling current (c) vs the bare level of the SQD with no spin-flip scattering for both magnetization configurations. (a) is plotted at a small bias V=1.0 and (b) is at a large bias V=10.0. The thick lines are plotted for the AP configuration, and the thin curves are for the P configuration. The equilibrium occupation numbers are depicted by the thin lines in (b). Other parameters are: U=4, T=0.1, and p=0.5.	cond	mat0308387-fig2.jpg
0.449673	48e1948c1f4c47d08a08434417b20ee8	Occupation numbers n_↑, n_↓ (a,d), ρ_dd (b,e), and current (c,f) vs the bias voltage, calculated for no spin-flip processes and different temperatures T=0.1, 0.5, and 1.0. (a)-(c) are plotted for ϵ_d=1, (d)-(f) for ϵ_d=-5. The insets in (c) and (f): the corresponding TMR vs the bias voltage. Other parameters are as in Fig. 2.	cond	mat0308387-fig3.jpg
0.466898	e8b9aafe110d421c8594667a340280fd	Occupation numbers n_↑, n_↓ (a,d), ρ_dd (b,e), and current (c,f) vs the bias voltage calculated for the AP configuration with the spin-flip transition R=1 and different temperatures T=0.1, 0.5, and 1.0. (a)-(c) are plotted for ϵ_d=1, (d)-(f) for ϵ_d=-5. For comparison, the respective results without the spin-flip transition are also plotted as thin lines. The insets in (b) and (e): the temperature and bias dependence of the spin relaxation rate. Other parameters are as in Fig. 2.	cond	mat0308387-fig4.jpg
0.53327	ecc721fe632e47b4ab1900f0c67454dc	Nonequilibrium occupation numbers n_1σ, n_2σ, ρ_dd (a,b), and current (c) vs the bare level of the CQD. (a) is plotted at a small bias V=1.0 and (b) is at a large bias V=10.0. The equilibrium occupation numbers are also depicted by the thin lines in (b) and (e). Other parameters are: U=4, T=0.1, and t=1.0.	cond	mat0308387-fig5.jpg
0.512259	10655a9725604f8ea830d1c31d556f4e	The same as Fig. 5 except for t=0.5.	cond	mat0308387-fig6.jpg
0.468734	e6c41729dbe14071a362d8e5a2be5159	Occupation numbers n_1σ, n_2σ, ρ_dd (a,d), current (b,e), and the differential conductance (c,f) vs the bias voltage, calculated for different hopping t. (a)-(c) are plotted for ϵ_d=1, (d)-(f) for ϵ_d=-5. Other parameters are as in Fig. 5.	cond	mat0308387-fig7.jpg
0.500512	3f46dca62d684a0c89197fd6c1594031	The current-voltage characteristics, calculated for indicated values of the interdot Coulomb interaction U and different hoppings t=0.2 (thin lines) and 1.0 (thick lines). (a) is plotted for ϵ_d=1, (b) is for ϵ_d=-5. Inset in (a): I-V curves for small U.	cond	mat0308387-fig8.jpg
0.436854	364d7a08cc3f49b98884fa7e5046233a	Occupation numbers n_1↑, n_1↓, n_2↑, and n_2↓ in the P configuration (a) and the AP configuration (b) for t=0.2, current (c), and TMR (d) for t=0.2 and 0.5 vs the bias voltage. Other parameters are ϵ_d=1, T=0.1, and p=0.5.	cond	mat0308387-fig9.jpg
0.451466	28fc55bc43be4dabb70265b1421074d3	The elastic charged rod is hinged at two ends and is subject to a compressional force F.	cond	mat0308389-fig1.jpg
0.404798	7481a97b108b4c9c942f7fe2900212fb	The critical buckling force for a charged rod as a function of its length (log-log plot). (a) The solid line corresponds to K=1 × 10^-19 N m^2 and Υ=1 n N. (b) The dashed line corresponds to K=100 × 10^-19 N m^2 and Υ=1 n N. (c) The dash-dotted line corresponds to K=1 × 10^-19 N m^2 and Υ=100 n N.	cond	mat0308389-fig2.jpg
0.476286	0ed520c558c6467b835b63746f5af364	The rescaled critical buckling force for a charged rod as a function of the charging parameter Q=Υ L^2/K. Note that three distinct series of data (hollow circles, triangles, and dashed line), corresponding to the different curves in Fig. <ref>, have been collapsed on top of a universal curve. The solid line represents the interpolation formula of Eq. (<ref>) for comparison.	cond	mat0308389-fig3.jpg
0.444712	09f5955bbcea4962ab5298a1ad3ee3f8	The shape of a charged rod at the onset of Euler buckling instability. The dashed line corresponds to Q=0, the solid line corresponds to Q=10^3, and the dash-dotted line corresponds to Q=10^6. The buckling charged rod flattens in the interior as the charging is increased.	cond	mat0308389-fig4.jpg
0.436794	94e8d3b352d54d9186ef80299cc52de2	Histogram of values for μ_min calculated from DC I-V measurements performed on approximately 100 tetracene single-crystals.	cond	mat0308391-SCLCmobilitiesoverview.jpg
0.443048	dc93f956124e447397a756f51ec37cee	Temperature dependence of the lower limit to the mobility, μ_min, measured for several tetracene single-crystals. Note the abrupt drop in mobility occurring at different temperatures below ≃ 180 K, originating from a known structural phase transition <cit.>.	cond	mat0308391-SCLCmobvstemp.jpg
0.467448	bb0e4331c72346f0aecaa16c88e65198	Typical result of a DC I-V measurement perpendicular to the ab plane of a tetracene single-crystal, with a thickness L = 30 μm and a mobility μ_min = 0.59 cm^2/Vs. The inset shows a similar measurement on a different crystal (L = 25 μm, μ_min = 0.014 cm^2/Vs), in which a crossing over into an approximately quadratic dependence on voltage is visible at high voltage. In both cases, a very steep current increase occur around of just above 100 V that we attribute to filling of deep traps. We observed a steep increase in current in most samples studied.	cond	mat0308391-SCLCtypical.jpg
0.458214	9c27ebe0f6ad4680ace40234abc3b708	Hole TOF pulses measured at different temperatures in the range from room temperature and 150 ^∘C. The applied voltage is +500 V. The arrows point to the transit times.	cond	mat0308391-Stuttgart1.jpg
0.553934	f41a8186c6d74dbdb596483addb1ec9e	Transit time of hole TOF pulses versus applied voltage estimated at 375 K showing a linear (Ohmic) dependence. The continuous and dotted lines represents, respectively, the best linear fit and the best linear fit passing through the origin. The corresponding difference in the μ values gives a measure of the uncertainty in the extracted mobility.	cond	mat0308391-Stuttgart2.jpg
0.436631	1bf400ecf746431d8ab07a9318f9919b	Temperature dependence of the hole mobility (full circles). The fit (straight line) is described by equation <ref> using an exponent n = 2, a mobility of 1.4 cm^2/Vs, a trap energy of 0.13 eV and a density ratio between shallow traps and tetracene molecules of 5 · 10^-3.	cond	mat0308391-Stuttgart3.jpg
0.423886	4fa7b57f6d3e4d6b91e3c681218c8e61	(a) Schematic overview of tetracene crystal growth system. Tetracene sublimes at temperature T_1, is transported through the system by the carrier gas (indicated by the arrows) and recrystallizes at temperature T_2. Heavy impurities (with a vapor pressure lower that that of tetracene) remain at the position of the source material. Light impurities (with a vapor pressure higher than that of tetracene) condense at a lower temperature T_3 < T_2, i.e. at a different position from where the crystals grow. Therefore, the crystal growth process also results in the purification of the material. (b) Result after first regrowth of as-purchased tetracene. Purified tetracene crystals are visible in the middle; the dark residue present where the source material initially was and the light (yellow) material visible on the right are due impurities. (c) At the end of the second regrowth no dark residue is present at the position of the source material, which demonstrate the purifying effect of the growth process.	cond	mat0308391-growthpictures.jpg
0.44555	685e9a1ffa3f41819f7fc448d49e9ccc	Measurements of R = (V^+ - V^-) / I as a function of the in-plane magnetic field at 4.2 K, (a) in the “side”, (b) “diagonal” and (c) “opposite” configuration.	cond	mat0308395-g_meas4K_1.jpg
0.433832	d10bb4282f9645d7b2fe46c5b0621a2f	(a) Scanning Electron Microscope (SEM) picture of a device. The square aluminium island in the middle is contacted by four cobalt electrodes of different widths<cit.>.	cond	mat0308395-img-11_3.jpg
0.442029	7ef4c60e32194271ac05c8dd9192d3f9	In a perfect world, a single vertex that can differentiate all exit edges from each other might distribute all tasks and information efficiently. In real world networks, no perfect ”distributor” exists: even when every vertex ”tries” to minimize its distances to all other vertices, typical vertices tend to connect through more than one intermediate. Imperfections destabilize the central hub, and the vertices in the network obtain a wide range of vertex degrees.	cond	mat0308399-fig1.jpg
0.424345	8d5c7fc28f544291ac6444d3f6c06f4c	Dynamics of edge rewiring: The edge between i and j is rewired to an edge between i and k, if local information predicts that k provides a shorter path to the random agent l (l=l_3 in figure). The agents' information about the network is subsequently updated as shown by the shift from lower left to lower right panel. Notice that the local information not necessarily is correct.	cond	mat0308399-fig2.jpg
0.431439	e10d1c10cc4d42f1a3a9cea2ef52ca52	Left panel: Vertex degree distribution of the evolved network with 4 levels of information exchange: no exchange, i.e. only rules (i) and (ii) apply in a), full exchange as in (iii) with exchange of rate S in (iv) with S=0, S=0.1, and S=1.0 in b)–d). In all lower cases we sample dynamics of an N=1000 vertex system with E=1500 edges (⟨ C ⟩ =3). The plots show average of many samples. The upper graphs show the corresponding networks of size N=100. Right panel: Schematic phase diagram illustrating the critical line which separates the dynamic and non-dynamic regime. The information exchange at levels a)–d) from left panel in e) and the variation of ⟨ C ⟩ that drives the network towards the critical line in f).	cond	mat0308399-fig3.jpg
0.450951	634ee79ce65043ab81ce907614d86e0c	a) Average information related to agents with vertex degree C for a simulation with critical information exchange. The upper curve is the fraction of agents with correct information I_about about their paths to the specific agent of degree C. The lower curve similarly refers to the information I_of the agent with degree C has about paths to other agents. b) Trajectory for a specific agent with its vertex degree (dark shaded area), the information the system has about the agent, I_about, and the information the agent has about the system, I_of. Time is counted as number of rewiring updates per agent.	cond	mat0308399-fig4.jpg
0.403725	85b4f3beb0f048c8b40df5a7c1ad67bb	Correlation profile for an ensemble of model networks with ⟨ C ⟩=3. The correlation profile measures the probability for an edge between two vertices of degree C_0 and C_1 in units of what it would be in a properly randomized network. One notices that agents with C ∼ 1 often connect to agents with C ∼ 5 that preferentially connect to agents with high C. Thus the network exhibits hierarchical features.	cond	mat0308399-fig5.jpg
0.466815	6880a7fd4aa8439ba0eb2e53fe0bc8ca	Monte Carlo measurements of the diffusion coefficient per interface length g(β J), as a function of inverse temperature β J.	cond	mat0308401-fig2.jpg
0.421637	546a1ccc51884fa7abaff4b6ae432e98	Histogram of the time Δ t elapsed before nucleation occurs, at inverse temperature β J=0.54 and external field strength h=0.08, in a system with 64 × 64 sites. The straight line is a fit, given by n(Δ t) ∼exp(Δ t/1990).	cond	mat0308401-fig3.jpg
0.451064	118c0d803d594571a4be5153b6abf4e8	Free energy as a function of cluster size in the 64× 64 system at β J=0.58 and h=0.08 (∘), β J=0.53 and h=0.08 (+), and β J=0.56 and h=0.06 (×) . In the simulations, C assumes integer values ≥ 1. The lines represent the Becker-Döring expression Eq. (<ref>), with fitted values for σ.	cond	mat0308401-figcurve.jpg
0.425892	1e6502ef21154312ab26c0e8aab9c0d8	Surface tension obtained by fitting the free energy curve, divided by the values given in Eq. (<ref>), as a function of β J. Different symbols denote different strengths of the external field: h=0.05 (∘), h=0.06 (), h=0.07 (♢), h=0.08 (+), h=0.09 (∙) and h=0.10 (×).	cond	mat0308401-surftens.jpg
0.479174	afb44d0a85fd414fa68f96b3a876f2d1	Schematic layout of the sample used in this work. The labeling is explained in the text.	cond	mat0308402-fig1.jpg
0.439374	6844709b4d344868a5f67c67fe2ed39f	Coulomb blockade oscillations of the electric current close to conduction pinch off of gate G_3 at source-drain bias 200 μV, temperature 0.3 K. Upper graphs show the source-drain-voltage dependence of current measured at the gate voltages indicated by the arrows. Roman numbers labeling the peaks are explained in the text.	cond	mat0308402-fig2.jpg
0.517357	d406e38246204c668a8b8d887c431783	Acoustoelectric current as a function of RF power at different gate voltages. The power refers to the generator output power.	cond	mat0308402-fig3.jpg
0.410922	89429bc24d84421eabff5a24af5b5d30	SAW current as a function of gate voltage and RF power presented as a highlighted surface plot. Areas of constant current ('plateaus') are labeled with the number n of electrons transferred per wave cycle.	cond	mat0308402-fig4.jpg
0.470902	326e8b7d76444cd8aac72dbe1dca955d	Grey scale coded plot of the numerical derivative dI/dP_SAW of current with respect to SAW power based on the data in Fig. <ref>. The medium grey in the lower left corner corresponds to a zero derivative, darker and lighter gray tones indicate positive and negative derivatives.	cond	mat0308402-fig5.jpg
0.411096	57655993ff6447c9970498a547059d7e	Grey scale coded plot of the numerical derivative dI/dV_SAW of current with respect to SAW amplitude based on the data in Fig. <ref>. Light represents small and dark large values of the derivative. The lower graph shows the current at the lowest SAW amplitude.	cond	mat0308402-fig6.jpg
0.392236	95f8a91b491d4151aa63aa1c1327b70c	Grey scale coded plot of dI/dV_SAW for different voltages applied to the arms of split gate G_3: V_Arm1,2=V_G± V_diff, values of V_diff are given in the subfigures. SAW amplitude varied from 0.15 to 2.1 mV and gate voltage from -1.15 V to -1.22 V at a temperature of 1.7 K and a frequency of 2787.35 MHz.	cond	mat0308402-fig7.jpg
0.479612	543978e582b64c9aa65715482df722d8	Model of resonant transport of electrons through a static quantum dot. In diagram a) a schematic structure of transition lines as derived from Fig. <ref> is shown. In diagrams b) to d) potential profiles along the channel for different total barrier heights are shown. They correspond to the points (A), (D), (C) and (F) in figure a) and are described in the text. Black circles within the rhomboids of diagram (a) indicate the number of electrons transferred per wave period in these regions.	cond	mat0308402-fig8.jpg
0.561055	e8e7adae9f114b1b876695008a901317	The spin coupling constant J up to different order of transformation. H1 is the Schrieffer Wolff result, H1+H3 is the result up to the third order of the transformation, and similarly for H1+H3+H5. Solid line shows the result up to infinite order.	cond	mat0308405-1DPAM_fig.jpg
0.445551	74ada458922d43c7afa16d4fb3305bb2	Two deformed surfaces S_1 and S_2 of dielectric media with dielectric functions ϵ_1(ω) and ϵ_2(ω), respectively, separated by a gap of mean size H along the x_3–direction. The meaning of the auxiliary surfaces R_1 and R_2 is explained in the text.	cond	mat0308412-profile.jpg

0.564189

c92acb70768f41ed991349315f36d0d6

Plot of the distribution of the correlation statistic ⟨ C ⟩ obtained from analysing images obtained by simulation (e.g. fig.<ref>). Probability of a certain value of the correlation statistic ⟨ C ⟩, P, is plotted against ⟨ C ⟩.

cond

mat0308330-finsimChist.jpg

0.476363

2813d3907f0144c8abc76f1f87fcb0dd

Width distribution obtained from simulation images (like fig.<ref>). Probability of a particular width, P(W), is plotted against the width, W, in nanometers.

cond

mat0308330-finsimwd.jpg

0.484578

553a9f266705499ba69f719d86785b4b

TEM image of gold nanoclusters on PS-b-PMMA template. The bright spherical structures are the gold nanoclusters which lie on the PS domain. It is to be noted that the gold is present both at the surface and in the bulk of the PS domain in the form of spherical clusters. Courtesy of W. Lopes and H. Jaeger.

cond

mat0308330-nanochainau3.jpg

0.405851

bc83f549991d4ec7ad4073839ce9e1e4

TEM image of silver nanowires on PS-b-PMMA template. The darker contiguous structures bounded by a dark border are the silver wires and the lighter regions inbetween are PMMA regions not covered by the silver. PS domains are underneath the silver wires. Different shades of gray in the wire regions show different nano-crystalline orientation. Courtesy of W. Lopes and H. Jaeger.

cond

mat0308330-nanwireag3.jpg

0.48078

6b5dd54f27584123a10dc87ad922c811

Binary image of the “wire” and “river” regions obtained by simulation. The lighter areas represent regions where silver is present (the “wires”). The darker area represents the exposed PMMA “river” region.

cond

mat0308330-postsmoothsim13.jpg

0.590701

b7baac610cd345af9becd0e7b7b7ab3f

Width distribution obtained from the experimental TEM images.

cond

mat0308330-wd1.jpg

0.546055

7af7e898440d4375b0b7ced604c16d57

The stairs of reduction, step by step.

cond

mat0308331-fig1.jpg

0.517155

5468f7bd4a884a649649a960466ce9b3

The stepwise construction of the film for dissipative system. First-order models: The motion along the defect of invariance.

cond

mat0308331-fig10.jpg

0.456587

1305f63812164ba5a831da3bf558d2ec

The stepwise construction of the film for dissipative system. Finite second-order models: The motion starts in the direction of the defect of invariance, and stops when the direction of motion becomes orthogonal to the defect of invariance.

cond

mat0308331-fig11.jpg

0.464999

d68e3c67f29849828763d2db5f6a6e08

The definition of the second-order models.

cond

mat0308331-fig12.jpg

0.47288

acdd032eef2d4476ae1c58d4951c73d2

Relations between a microscopic state f, the corresponding macroscopic state M=m(f), and quasiequilibria f^*_M.

cond

mat0308331-fig2.jpg

0.429307

89db918ca8484342a6ee6db8f4de471e

Quasiequilibrium manifold Ω, tangent space T_f^*_MΩ, quasiequilibrium projector π_f^*_M, and defect of invariance, Δ=Δ_f^*_M=J-π_f^*_M(J).

cond

mat0308331-fig3.jpg

0.558024

ac58a6ec79e14bee995f367a553fec1b

Ehrenfest's chain over the quasiequilibrium manifold, and trajectory of the macroscopic dynamics, Ṁ=F(M).

cond

mat0308331-fig5.jpg

0.471828

4145fd4a8a1443deaa4d3fc788b93198

Projection of segments of trajectories: The microscopic motion above the manifold Ω and the macroscopic motion on this manifold. If these motions began in the same point on Ω, then, after time τ, projection of the microscopic state onto Ω should coincide with the result of the macroscopic motion on Ω. For quasiequilibrium Ω projector π: E →Ω acts as π(f)=f^*_m(f).

cond

mat0308331-fig6.jpg

0.477376

4d934beee2db44c6ae34e49e62461c03

The film of nonequilibrium states as the trajectory of motion of the quasiequilibrium manifold due to microscopic dynamics.

cond

mat0308331-fig7.jpg

0.509788

03ec3b1bce3d4cfc9b1354b08362cd06

Dynamics on the film: Ṁ = mJ(q_M,τ), τ̇= -D_fS|_q_M,τ D_Mq_M,τṀ D_fS|_q_M,τD_τq_M,τ.

cond

mat0308331-fig9.jpg

0.436224

ea019287f12e4f7d8681f2599e105e88

Examples of closed surfaces R_1(T^2_xy) which are cut by the R_Y-R_Z-plane. The monopole is at the origin. t=d_z= 1, μ=-5: (a)k_z=0, (b)k_z=-2 π/5.

cond

mat0308332-fig1.jpg

0.449433

6dc901949415485d80c41efd3b6f1244

The magnetothermopower for heat current along the a direction is shown for T=1.4 K, T=4.8 K ,T=5.8 K and T=6.9 K from top to bottom, the circles denote the experimental data from Ref. <cit.>, the solid line is our fit based on Eq. (<ref>).

cond

mat0308335-choi4a.jpg

0.454874

f79c4a5654a94eab965fd096c3c7cb5a

The Nernst signal for heat current along the a direction is shown for T=1.4 K and T=4.8 K (from bottom to top), the dashed lines with circles denote the experimental data from Ref. <cit.>, the solid line is our fit based on Eq. (<ref>).

cond

mat0308335-choi5a.jpg

0.479824

c0d76d47b3124a5f90809794cc62d430

The temperature dependence of the magnetothermopower for heat current along the a direction is shown for B=12 T, the circles denote the experimental data from Ref. <cit.>, the solid line is our fit based on Eq. (<ref>).

cond

mat0308335-choi6a12.jpg

0.505058

48ace9d23cae4d9d95ab701b7dd41a48

Schematics of the adsorption sites for Mg atom on Si(001) surface from three different views. The symbols stand for: b=bridge, p=pedestal, h=hallow, s=shallow and c=cave. (The dimers are shown symmetric here for visual convenience)

cond

mat0308351-1.jpg

0.485419

69dcd37b95274e45a7ef6fe5c156c259

Typical configurations of an ensemble of collapsing chains at an intermediate time (L/L_p = 8, u_0 = 1.25 kT/a).

cond

mat0308356-Fig1.jpg

0.428152

e4d17c36e8e04f669c838d5c52ed9daa

Comparison between time series of end to end distance R and total energy for direct formation of toroid and formation through intermediate states.

cond

mat0308356-Fig2.jpg

0.466581

1538df0d11ab42d391ec0ba2dd792c26

Time series of total energy for an ensemble of molecules, with labels of the corresponding configurations and actual shape of (a) 1 head (b) 2 heads (c) 5 heads racquets and (d) torus.

cond

mat0308356-Fig3.jpg

0.433244

ce19a96fe65f4af2b89417f3985acd88

(a) Actual shape, (b) correlation matrix and (c) spatial covariogram (with fitting curve) for (1) an uncollapsed molecule, (2) a metastable racquet-head shape and (3) a stable torus.

cond

mat0308356-Fig4.jpg

0.444755

2cda62e6b81d44b9b46d373701c09d3e

Masterplot of the decay rate of uncollapsed molecules.

cond

mat0308356-Fig5.jpg

0.400514

31623ef109a544e296cd4e6cb067dc3d

(a) Metastable racquet-headed state for a phantom chain and (b) corresponding correlation matrix. Inset in (a): energy traces in time for collapsing phantom chains.

cond

mat0308356-Fig6.jpg

0.518698

d4e5668d60f24808a575faa892a9efd5

Plot of the decay rate D_ vs. Wi for L/L_p = 3, 5, 8, ũ_0 = 1 kT and R_ = 10/3.

cond

mat0308356-Fig7.jpg

0.562993

bd272f421c1941b38e6cbe281c191a8a

Collapsed configurations of semiflexible chains in shear flow at Wi = 10; (a) L/L_p = 8, (b) L/L_p = 5.

cond

mat0308356-Fig8.jpg

0.440049

3f36548482ac483f8eb2f832ff90c3f7

Crystal structure of β-vanadium bronze A_xV_2O_5. Schematic drawing of the V1 zigzag chain and the V2 ladder is also shown.

cond

mat0308368-Fig1.jpg

0.49378

0845cd26229346688f886a1a846a1d05

Normal emission spectra of β-Na_0.33V_2O_5 taken at 160 K.

cond

mat0308368-Fig2.jpg

0.421064

fd4c43f283af4fe28e77d169f618a037

ARPES spectra of β-Na_0.33V_2O_5 taken at 160 K. The vertical lines indicate peak positions or inflection points.

cond

mat0308368-Fig3.jpg

0.442656

a5a17f5ca6694e74b748cdf67e76bb00

(a) Intensity plot of ARPES spectra near E_F in the E-k plane. The vertical arrows indicate k = ±π/4b. (b) Momentum distribution curves. Dashed curves are fitted Lorentzians and the vertical lines indicate their peak positions. (c) Energy distribution curves.

cond

mat0308368-Fig4.jpg

0.48764

00bfb36549994ebdbc999d544f2a9860

A possible scheme for measuring dynamic structure function by SBS. The laser photon with momentum 𝐤_1 is scattered into a photon with momentum 𝐤_3 transferring a momentum 𝐪 = 𝐤_1 - 𝐤_3 to the atoms along the x axis, while the laser photon with momentum 𝐤_3 is scattered into a photon with momentum 𝐤_2 transferring a momentum -𝐪 = 𝐤_3 - 𝐤_2 to the atoms. The frequencies of the three laser beams are chosen such that the energy transfer δ = (ω_1 - ω_3) = (ω_3 - ω_2) > 0. A pair of atoms which may form a Cooper pair having mutually opposite momenta are scattered equally. The one-dimensional (along the x direction) momentum and density distribution of the gas can be determined from the analysis of time of flight images. The spectrum (number of scattered atoms versus δ for different 𝐪 values) may reveal the existence of the gap and the detailed comparison of the spectra for different relative densities of the two components may provide a proof of IG superfluidity.

cond

mat0308369-dia1.jpg

0.535713

f7e7966407ff4352883b5158bb9cb160

Right hand side (RHS) of gap Eq. (<ref>) is plotted vs Δ |a_ eff| for different values of difference in chemical potential δ_ν. The gap is given by the condition RHS=1. The solid, dotted dashed-dotted and dashed lines correspond to δ_ν |a_ eff|=0, 0.25, 0.35 and 0.45, respectively. For δ_ν |a_ eff|=0.45, two solutions for gap exists. The smaller value corresponds to “IG state" and the larger one corresponds to usual Bardeen-Cooper-Schrieffer state.

cond

mat0308369-fig1.jpg

0.437928

bed0627f3675455a902418dee9f8b447

(a) The gap (in unit of E_F) as a function of k_0|a_ eff|. (b) The gap as a function of ratio (ρ_1/ρ_2) of the two densities. Average occupation numbers n_1(k) and n_2(k) as functions of k are shown in (c) and (d), respectively, for the parameters k_0|a_ eff|=1.5 and ρ_1/ρ_2=1.4.

cond

mat0308369-fig2.jpg

0.422599

60e86e84cc104ee8afed915ba7b13b48

ln[e(E)/e(0)] as a function of E^2/E_c^*2 for different ωτ and ω_cτ calculated after Eqs. (<ref>), (<ref>) and (<ref>) for a magnetic field normal to the electric field; ω and ω_c are the radiation frequency and the cyclotron frequency, respectively. Here the parameter ωτ controls the frequency dependence of tunneling while ω_cτ reflects the influence of the magnetic field.

cond

mat0308370-fig1.jpg

0.457417

98cb3af0612b4284a4c5e6779ca4e23e

Photoconductive signal for Ge:Hg as a function of E^2 for different magnetic field strengths B_x and orientations.

cond

mat0308370-fig2.jpg

0.506105

510ee01910b647eaa181fb89e9a736e1

Photoconductive signal as a function of magnetic field strength for two polarizations: E⊥ B_x and E∥ B_x in the high-frequency limit (ωτ > 1).

cond

mat0308370-fig3.jpg

0.550482

156970c316234770a4022e8d54eba791

Photoconductive signal as a function of magnetic field strength for two polarizations: E⊥ B_x and E∥ B_x in the quasi-static limit (ωτ<1)

cond

mat0308370-fig4.jpg

0.483894

d2704ecaa5364c0b9e10b05f1a947c05

The Hall (a) and longitudinal (b) resistivities of In_0.2Ga_0.8As/GaAs quantum well as a function of magnetic field at selected temperatures.

cond

mat0308371-Fig01.jpg

0.430437

9899eefe8c4b4cc09a0689e4671461b1

The longitudinal resistivity ρ_xx as a function of filling factor ν at temperatures 1.07, 0.80, 0.60, 0.45, 0.34, 0.26, 0.19, 0.142, 0.107 and 0.080 K for the InGaAs/GaAs QW. The crossing point indicates the PI transition. Near the critical point the resistivity ρ_xx obeys Eq.(1). The carrier density n = 2.0 × 10^11 cm^-2. Inset: temperature dependence of the fitting parameter 1/ν_0 (open symbols) for two different values of carrier densities as indicated. Solid lines represent linear fits.

cond

mat0308371-Fig02.jpg

0.416401

0fc7b787fb4c44358a8c129f75625295

The ρ_xx data for the InGaAs/GaAs QW (B_c = 15.7 T) from Fig. <ref>, plotted versus Δν in the insulating (a) and quantum Hall phase (b). The axis are rescaled to illustrate the validity of Eq. <ref>. Equally spaced parallel lines signify scaling.

cond

mat0308371-Fig03.jpg

0.509912

860e8429d53242fe9c9e1543e0adf517

The field dependence of the Hall resistivity ρ_H(B) near the critical field B_c at three different temperatures as indicated. Inset: the deviation of ρ_H from the quantized value h/e^2 at critical field B_c versus T.

cond

mat0308371-Fig04.jpg

0.527618

cbf03598723e46f9b84b136a0ebf25b7

Spectral density or b-DOS ρ_b(ω) for various values of doping x and temperature T. The effective ℓ polaron level is marked as a vertical line. Parameters chosen are E_JT = -0.5 eV, D_o=1.2 eV , U̅ = 5.0 eV J_F = 2.23 meV. (a) x=0.1, T=0, μ = -E_JT; ferromagnetic insulator. (b) x=0.3, T=180 K (< T_c = 240K); ferromagnetic metal. (c) x=0.3, T=350 K ; paramagnetic insulator. Full(dotted) lines correspond to up(down) spin DOS. Occupied band states are shown shaded.

cond

mat0308376-FIG1.jpg

0.522478

fb1d6fdaf2d6477aab92278bb452cdc7

The resistivity ρ(T) of La_1-xCa_xMnO_3 (x=0.33) as a function of temperature T. Calculated (full lines for realistic anisotropic hopping, dotted lines for a semicircular DOS) and experimental (circles, from ref.<cit.>) results for H = 0 and 7 Tesla are shown. Parameters, chosen to fit T_c and ρ(T_c), are E_JT= -0.5 eV(SDOS),-0.6 eV(RDOS), 2D_o= 2.4 eV (SDOS), 2.44 eV (RDOS), U̅ = 5 eV, and J_F= 2.37 meV.

cond

mat0308376-FIG2.jpg

0.415608

04be0fa732cf4f4e883898db78af84b6

Fig. 1. Ratio of the effective and bare masses, m^*/m, vs. carrier concentration n. The solid line represents the theoretical formula (<ref>), which is the same as Eq. (8) in Ref. <cit.>. The points represent the experimental data for Si-MOSFET from Fig. 27 of Ref. <cit.>, obtained from the Shubnikov-de Haas oscillation (SdH, squares) and from the spin-polarizing parallel magnetic field (B_, circles).

cond

mat0308380-fig1.jpg

0.423613

4bf415009b944e02a7a053b62dbe486d

Fig. 2. (m/m^*-1)^-2 vs. n. The parameters in Eq.(<ref>) are determined by the slope and the offset of the linear fit: n_c=0.7×10^-11 cm^-2 and C_3=0.46. The effective mass m^* diverges at n_∞=0.9×10^-11 cm^-2, where the straight line crosses level 1 shown by the horizontal line.

cond

mat0308380-fig2.jpg

0.500764

f70a3f84269543fca956f49b4366cdd4

(color online) Schematic picture of a two-dimensional pumping contour, crossing the resonance line at two resonance points (B and D). The transmission is maximal at the point M.

cond

mat0308382-fig1.jpg

0.421023

d76afab55e6647098cebef322a66d42e

(color online) (a) The pumping contour A-B-C-D-A and the resonance line B-D for the single level turnstile model<cit.>. (b) Interpretation of the pumping cycle on an energy diagram. A: The effective energy level E_0 is above the chemical potential μ, the dot is empty. B: Loading process with preference to the left-coming electrons. C: The level E_0 is below μ, the dot is occupied. D: Unloading process with preference to the right-going electrons. The asymmetry between B and D creates the non-vanishing total pumped charge. The arrows indicate schematically the direction and the relative magnitude of the current pulses caused by each resonance.

cond

mat0308382-fig2.jpg

0.472807

4b9bd49f341a4ec2827d0de06f3dcf72

(color online) Pumped charge (in units of e) as a function of δ for X_1=1/50, X_2=1/5 and κ a = π /20, calculated within the resonance approximation (Q^R, blue continuous line) and exactly (Q, dashed line). Thick bars on the δ axis mark the resonance widths ±Γ/J around the special points δ_1,2,3, where deviations from the the exact result are anticipated. Inset: Absolute error of the resonance approximation, (Q^R-Q)/e, for the same values of δ. The thick dotted line corresponds to Q^R calculated from the transmission maxima, see text for details.

cond

mat0308382-fig3.jpg

0.528564

055fbcfca9774a8a9ed5aba5fe2db6dc

Time traces of the transmission coefficient 𝒯_lr along the pumping contour for six values of δ, increasing with constant intervals from top to bottom. Two complementary resonances B and D (marked with arrows) are observed for δ_1 < δ < δ_3 when the pumping contour crosses the resonance line (cf. Fig. <ref>a). Thick bars on the δ-axis mark the regions where the loading/unloading pumping mechanism fails.

cond

mat0308382-fig4.jpg

0.493852

cb8d84d5f21e44d8b7334bd853c41bec

MR of a representative sample as fabricated (a) and after further etching (b). The inset in (a) shows the MR of a wire without constrictions, whereas the inset in (b) shows that the MR is reduced exponentially with bias voltage.

cond

mat0308385-Figure2.jpg

0.482101

7c5054dbcd8e494a84bed38a15f416d3

(b) MR in a sample with tunnel barriers at the constrictions. The top panel (a) depicts schematically the tunneling events taking place in the sample.

cond

mat0308385-Figure3.jpg

0.478258

cb8de9851b9241d4b7c325104bc769ea

False-color SEM picture (side-view) of a double constriction showing part of the outer wires with the voltage leads. Note the resist that is still present on the wire. The insets show the relative magnetization of the parts (left) and the resulting schematic MR trace for sweep-up (solid line) and sweep-down (dashed line).

cond

mat0308385-fig1e.jpg

0.439192

de6af0c9461248c48f799e642fd6061f

Total Gilbert damping coefficient α, interband contribution α_ inter, and intraband contribution α_ intra as a function quasiparticle life-time broadening Γ for a carrier density of 0.5 nm^-3 and x=8%.

cond

mat0308386-fig1.jpg

0.412988

34807edeb4394bbd8a81fd44e3ed861f

Gilbert damping coefficient α as a function of carrier density for x=2% – 8% and for quasiparticle life-time broadening of 150 meV (a) and 50 meV (b).

cond

mat0308386-fig2_b.jpg

0.445457

bf89e9919ed643b7abf02c94366d5bd8

Experimental peak-to-peak FMR linewidth in as-grown (filled symbols) and annealed (open symbols) Ga_0.92Mn_0.08As samples measured as a function of temperature for [001] and [110] dc magnetic field orientations (main plot) and as a function of the field angle at 4 Kelvin (inset).

cond

mat0308386-fig3.jpg

0.500632

b38711b0c726471b8f856aa9e8192e2e

Schematic diagrams for the resonant tunneling through (a) a single interacting QD and (b) a coherently coupled QDs.

cond

mat0308387-fig1.jpg

0.492113

ce342277a4564af196f0f0b27ea6e482

The same as Fig. 9 but for the case of ϵ_d=-5.

cond

mat0308387-fig10.jpg

0.496819

17e09af6774f47b79fb10547d1307646

Nonequilibrium occupation numbers n_↑, n_↓, and ρ_dd (a,b), and tunneling current (c) vs the bare level of the SQD with no spin-flip scattering for both magnetization configurations. (a) is plotted at a small bias V=1.0 and (b) is at a large bias V=10.0. The thick lines are plotted for the AP configuration, and the thin curves are for the P configuration. The equilibrium occupation numbers are depicted by the thin lines in (b). Other parameters are: U=4, T=0.1, and p=0.5.

cond

mat0308387-fig2.jpg

0.449673

48e1948c1f4c47d08a08434417b20ee8

Occupation numbers n_↑, n_↓ (a,d), ρ_dd (b,e), and current (c,f) vs the bias voltage, calculated for no spin-flip processes and different temperatures T=0.1, 0.5, and 1.0. (a)-(c) are plotted for ϵ_d=1, (d)-(f) for ϵ_d=-5. The insets in (c) and (f): the corresponding TMR vs the bias voltage. Other parameters are as in Fig. 2.

cond

mat0308387-fig3.jpg

0.466898

e8b9aafe110d421c8594667a340280fd

Occupation numbers n_↑, n_↓ (a,d), ρ_dd (b,e), and current (c,f) vs the bias voltage calculated for the AP configuration with the spin-flip transition R=1 and different temperatures T=0.1, 0.5, and 1.0. (a)-(c) are plotted for ϵ_d=1, (d)-(f) for ϵ_d=-5. For comparison, the respective results without the spin-flip transition are also plotted as thin lines. The insets in (b) and (e): the temperature and bias dependence of the spin relaxation rate. Other parameters are as in Fig. 2.

cond

mat0308387-fig4.jpg

0.53327

ecc721fe632e47b4ab1900f0c67454dc

Nonequilibrium occupation numbers n_1σ, n_2σ, ρ_dd (a,b), and current (c) vs the bare level of the CQD. (a) is plotted at a small bias V=1.0 and (b) is at a large bias V=10.0. The equilibrium occupation numbers are also depicted by the thin lines in (b) and (e). Other parameters are: U=4, T=0.1, and t=1.0.

cond

mat0308387-fig5.jpg

0.512259

10655a9725604f8ea830d1c31d556f4e

The same as Fig. 5 except for t=0.5.

cond

mat0308387-fig6.jpg

0.468734

e6c41729dbe14071a362d8e5a2be5159

Occupation numbers n_1σ, n_2σ, ρ_dd (a,d), current (b,e), and the differential conductance (c,f) vs the bias voltage, calculated for different hopping t. (a)-(c) are plotted for ϵ_d=1, (d)-(f) for ϵ_d=-5. Other parameters are as in Fig. 5.

cond

mat0308387-fig7.jpg

0.500512

3f46dca62d684a0c89197fd6c1594031

The current-voltage characteristics, calculated for indicated values of the interdot Coulomb interaction U and different hoppings t=0.2 (thin lines) and 1.0 (thick lines). (a) is plotted for ϵ_d=1, (b) is for ϵ_d=-5. Inset in (a): I-V curves for small U.

cond

mat0308387-fig8.jpg

0.436854

364d7a08cc3f49b98884fa7e5046233a

Occupation numbers n_1↑, n_1↓, n_2↑, and n_2↓ in the P configuration (a) and the AP configuration (b) for t=0.2, current (c), and TMR (d) for t=0.2 and 0.5 vs the bias voltage. Other parameters are ϵ_d=1, T=0.1, and p=0.5.

cond

mat0308387-fig9.jpg

0.451466

28fc55bc43be4dabb70265b1421074d3

The elastic charged rod is hinged at two ends and is subject to a compressional force F.

cond

mat0308389-fig1.jpg

0.404798

7481a97b108b4c9c942f7fe2900212fb

The critical buckling force for a charged rod as a function of its length (log-log plot). (a) The solid line corresponds to K=1 × 10^-19 N m^2 and Υ=1 n N. (b) The dashed line corresponds to K=100 × 10^-19 N m^2 and Υ=1 n N. (c) The dash-dotted line corresponds to K=1 × 10^-19 N m^2 and Υ=100 n N.

cond

mat0308389-fig2.jpg

0.476286

0ed520c558c6467b835b63746f5af364

The rescaled critical buckling force for a charged rod as a function of the charging parameter Q=Υ L^2/K. Note that three distinct series of data (hollow circles, triangles, and dashed line), corresponding to the different curves in Fig. <ref>, have been collapsed on top of a universal curve. The solid line represents the interpolation formula of Eq. (<ref>) for comparison.

cond

mat0308389-fig3.jpg

0.444712

09f5955bbcea4962ab5298a1ad3ee3f8

The shape of a charged rod at the onset of Euler buckling instability. The dashed line corresponds to Q=0, the solid line corresponds to Q=10^3, and the dash-dotted line corresponds to Q=10^6. The buckling charged rod flattens in the interior as the charging is increased.

cond

mat0308389-fig4.jpg

0.436794

94e8d3b352d54d9186ef80299cc52de2

Histogram of values for μ_min calculated from DC I-V measurements performed on approximately 100 tetracene single-crystals.

cond

mat0308391-SCLCmobilitiesoverview.jpg

0.443048

dc93f956124e447397a756f51ec37cee

Temperature dependence of the lower limit to the mobility, μ_min, measured for several tetracene single-crystals. Note the abrupt drop in mobility occurring at different temperatures below ≃ 180 K, originating from a known structural phase transition <cit.>.

cond

mat0308391-SCLCmobvstemp.jpg

0.467448

bb0e4331c72346f0aecaa16c88e65198

Typical result of a DC I-V measurement perpendicular to the ab plane of a tetracene single-crystal, with a thickness L = 30 μm and a mobility μ_min = 0.59 cm^2/Vs. The inset shows a similar measurement on a different crystal (L = 25 μm, μ_min = 0.014 cm^2/Vs), in which a crossing over into an approximately quadratic dependence on voltage is visible at high voltage. In both cases, a very steep current increase occur around of just above 100 V that we attribute to filling of deep traps. We observed a steep increase in current in most samples studied.

cond

mat0308391-SCLCtypical.jpg

0.458214

9c27ebe0f6ad4680ace40234abc3b708

Hole TOF pulses measured at different temperatures in the range from room temperature and 150 ^∘C. The applied voltage is +500 V. The arrows point to the transit times.

cond

mat0308391-Stuttgart1.jpg

0.553934

f41a8186c6d74dbdb596483addb1ec9e

Transit time of hole TOF pulses versus applied voltage estimated at 375 K showing a linear (Ohmic) dependence. The continuous and dotted lines represents, respectively, the best linear fit and the best linear fit passing through the origin. The corresponding difference in the μ values gives a measure of the uncertainty in the extracted mobility.

cond

mat0308391-Stuttgart2.jpg

0.436631

1bf400ecf746431d8ab07a9318f9919b

Temperature dependence of the hole mobility (full circles). The fit (straight line) is described by equation <ref> using an exponent n = 2, a mobility of 1.4 cm^2/Vs, a trap energy of 0.13 eV and a density ratio between shallow traps and tetracene molecules of 5 · 10^-3.

cond

mat0308391-Stuttgart3.jpg

0.423886

4fa7b57f6d3e4d6b91e3c681218c8e61

(a) Schematic overview of tetracene crystal growth system. Tetracene sublimes at temperature T_1, is transported through the system by the carrier gas (indicated by the arrows) and recrystallizes at temperature T_2. Heavy impurities (with a vapor pressure lower that that of tetracene) remain at the position of the source material. Light impurities (with a vapor pressure higher than that of tetracene) condense at a lower temperature T_3 < T_2, i.e. at a different position from where the crystals grow. Therefore, the crystal growth process also results in the purification of the material. (b) Result after first regrowth of as-purchased tetracene. Purified tetracene crystals are visible in the middle; the dark residue present where the source material initially was and the light (yellow) material visible on the right are due impurities. (c) At the end of the second regrowth no dark residue is present at the position of the source material, which demonstrate the purifying effect of the growth process.

cond

mat0308391-growthpictures.jpg

0.44555

685e9a1ffa3f41819f7fc448d49e9ccc

Measurements of R = (V^+ - V^-) / I as a function of the in-plane magnetic field at 4.2 K, (a) in the “side”, (b) “diagonal” and (c) “opposite” configuration.

cond

mat0308395-g_meas4K_1.jpg

0.433832

d10bb4282f9645d7b2fe46c5b0621a2f

(a) Scanning Electron Microscope (SEM) picture of a device. The square aluminium island in the middle is contacted by four cobalt electrodes of different widths<cit.>.

cond

mat0308395-img-11_3.jpg

0.442029

7ef4c60e32194271ac05c8dd9192d3f9

In a perfect world, a single vertex that can differentiate all exit edges from each other might distribute all tasks and information efficiently. In real world networks, no perfect ”distributor” exists: even when every vertex ”tries” to minimize its distances to all other vertices, typical vertices tend to connect through more than one intermediate. Imperfections destabilize the central hub, and the vertices in the network obtain a wide range of vertex degrees.

cond

mat0308399-fig1.jpg

0.424345

8d5c7fc28f544291ac6444d3f6c06f4c

Dynamics of edge rewiring: The edge between i and j is rewired to an edge between i and k, if local information predicts that k provides a shorter path to the random agent l (l=l_3 in figure). The agents' information about the network is subsequently updated as shown by the shift from lower left to lower right panel. Notice that the local information not necessarily is correct.

cond

mat0308399-fig2.jpg

0.431439

e10d1c10cc4d42f1a3a9cea2ef52ca52

Left panel: Vertex degree distribution of the evolved network with 4 levels of information exchange: no exchange, i.e. only rules (i) and (ii) apply in a), full exchange as in (iii) with exchange of rate S in (iv) with S=0, S=0.1, and S=1.0 in b)–d). In all lower cases we sample dynamics of an N=1000 vertex system with E=1500 edges (⟨ C ⟩ =3). The plots show average of many samples. The upper graphs show the corresponding networks of size N=100. Right panel: Schematic phase diagram illustrating the critical line which separates the dynamic and non-dynamic regime. The information exchange at levels a)–d) from left panel in e) and the variation of ⟨ C ⟩ that drives the network towards the critical line in f).

cond

mat0308399-fig3.jpg

0.450951

634ee79ce65043ab81ce907614d86e0c

a) Average information related to agents with vertex degree C for a simulation with critical information exchange. The upper curve is the fraction of agents with correct information I_about about their paths to the specific agent of degree C. The lower curve similarly refers to the information I_of the agent with degree C has about paths to other agents. b) Trajectory for a specific agent with its vertex degree (dark shaded area), the information the system has about the agent, I_about, and the information the agent has about the system, I_of. Time is counted as number of rewiring updates per agent.

cond

mat0308399-fig4.jpg

0.403725

85b4f3beb0f048c8b40df5a7c1ad67bb

Correlation profile for an ensemble of model networks with ⟨ C ⟩=3. The correlation profile measures the probability for an edge between two vertices of degree C_0 and C_1 in units of what it would be in a properly randomized network. One notices that agents with C ∼ 1 often connect to agents with C ∼ 5 that preferentially connect to agents with high C. Thus the network exhibits hierarchical features.

cond

mat0308399-fig5.jpg

0.466815

6880a7fd4aa8439ba0eb2e53fe0bc8ca

Monte Carlo measurements of the diffusion coefficient per interface length g(β J), as a function of inverse temperature β J.

cond

mat0308401-fig2.jpg

0.421637

546a1ccc51884fa7abaff4b6ae432e98

Histogram of the time Δ t elapsed before nucleation occurs, at inverse temperature β J=0.54 and external field strength h=0.08, in a system with 64 × 64 sites. The straight line is a fit, given by n(Δ t) ∼exp(Δ t/1990).

cond

mat0308401-fig3.jpg

0.451064

118c0d803d594571a4be5153b6abf4e8

Free energy as a function of cluster size in the 64× 64 system at β J=0.58 and h=0.08 (∘), β J=0.53 and h=0.08 (+), and β J=0.56 and h=0.06 (×) . In the simulations, C assumes integer values ≥ 1. The lines represent the Becker-Döring expression Eq. (<ref>), with fitted values for σ.

cond

mat0308401-figcurve.jpg

0.425892

1e6502ef21154312ab26c0e8aab9c0d8

Surface tension obtained by fitting the free energy curve, divided by the values given in Eq. (<ref>), as a function of β J. Different symbols denote different strengths of the external field: h=0.05 (∘), h=0.06 (), h=0.07 (♢), h=0.08 (+), h=0.09 (∙) and h=0.10 (×).

cond

mat0308401-surftens.jpg

0.479174

afb44d0a85fd414fa68f96b3a876f2d1

Schematic layout of the sample used in this work. The labeling is explained in the text.

cond

mat0308402-fig1.jpg

0.439374

6844709b4d344868a5f67c67fe2ed39f

Coulomb blockade oscillations of the electric current close to conduction pinch off of gate G_3 at source-drain bias 200 μV, temperature 0.3 K. Upper graphs show the source-drain-voltage dependence of current measured at the gate voltages indicated by the arrows. Roman numbers labeling the peaks are explained in the text.

cond

mat0308402-fig2.jpg

0.517357

d406e38246204c668a8b8d887c431783

Acoustoelectric current as a function of RF power at different gate voltages. The power refers to the generator output power.

cond

mat0308402-fig3.jpg

0.410922

89429bc24d84421eabff5a24af5b5d30

SAW current as a function of gate voltage and RF power presented as a highlighted surface plot. Areas of constant current ('plateaus') are labeled with the number n of electrons transferred per wave cycle.

cond

mat0308402-fig4.jpg

0.470902

326e8b7d76444cd8aac72dbe1dca955d

Grey scale coded plot of the numerical derivative dI/dP_SAW of current with respect to SAW power based on the data in Fig. <ref>. The medium grey in the lower left corner corresponds to a zero derivative, darker and lighter gray tones indicate positive and negative derivatives.

cond

mat0308402-fig5.jpg

0.411096

57655993ff6447c9970498a547059d7e

Grey scale coded plot of the numerical derivative dI/dV_SAW of current with respect to SAW amplitude based on the data in Fig. <ref>. Light represents small and dark large values of the derivative. The lower graph shows the current at the lowest SAW amplitude.

cond

mat0308402-fig6.jpg

0.392236

95f8a91b491d4151aa63aa1c1327b70c

Grey scale coded plot of dI/dV_SAW for different voltages applied to the arms of split gate G_3: V_Arm1,2=V_G± V_diff, values of V_diff are given in the subfigures. SAW amplitude varied from 0.15 to 2.1 mV and gate voltage from -1.15 V to -1.22 V at a temperature of 1.7 K and a frequency of 2787.35 MHz.

cond

mat0308402-fig7.jpg

0.479612

543978e582b64c9aa65715482df722d8

Model of resonant transport of electrons through a static quantum dot. In diagram a) a schematic structure of transition lines as derived from Fig. <ref> is shown. In diagrams b) to d) potential profiles along the channel for different total barrier heights are shown. They correspond to the points (A), (D), (C) and (F) in figure a) and are described in the text. Black circles within the rhomboids of diagram (a) indicate the number of electrons transferred per wave period in these regions.

cond

mat0308402-fig8.jpg

0.561055

e8e7adae9f114b1b876695008a901317

The spin coupling constant J up to different order of transformation. H1 is the Schrieffer Wolff result, H1+H3 is the result up to the third order of the transformation, and similarly for H1+H3+H5. Solid line shows the result up to infinite order.

cond

mat0308405-1DPAM_fig.jpg

0.445551

74ada458922d43c7afa16d4fb3305bb2

Two deformed surfaces S_1 and S_2 of dielectric media with dielectric functions ϵ_1(ω) and ϵ_2(ω), respectively, separated by a gap of mean size H along the x_3–direction. The meaning of the auxiliary surfaces R_1 and R_2 is explained in the text.

cond

mat0308412-profile.jpg