nopperl/arxiv-image-text · Datasets at Hugging Face

dedup-isc-ft-v107-score float64 0.32 1	uid stringlengths 32 32	text stringlengths 0 32.5k	paper_id stringlengths 1 14	original_image_filename stringlengths 5 222
0.464755	d633fbc0c84b45c187e5a0c30ff676dc	Particle–hole (top row) vertex Γ^eh which appears in the FLEX approximation. Definition of the FLEX self–energy constructed with the help of the particle–hole vertex (bottom row).	cond	mat0307682-FLEX_fig01.jpg
0.491727	bcadcf6c99b74b1ca16886df54e36413	Particle–particle (top row) vertex Γ^ee which appears in the FLEX approximation. Definition of the FLEX self–energy constructed with the help of the particle–particle vertex (bottom row).	cond	mat0307682-FLEX_fig02.jpg
0.50528	26f3f529ddc44ed99f8a08fde2975887	Particle–hole vertex Γ^v corresponding to the third scattering channel is given in top row. Definition of the corresponding self–energy is presented in the bottom row.	cond	mat0307682-FLEX_fig03.jpg
0.494602	ab0de0badc9f4a9d9cfb0e002f4d81c7	Spin density (-1)^i_x+i_yS_z,i and charge density n_i for x=0.049 (a), 0.048 (b) and 0.047 (c). Horizontal axis shows the site-index. The incommensurability is fixed at 2δ=0.05. (d) Charge structures around the center of stripe in (a)-(c) are magnified to see the x-dependence of the structure. The vertical dotted line shows the center of the stripe i.e. the domain wall. For x=0.047, the domain wall is located in a bond center. For x=0.049 and x=0.048, it is away from the bond center.	cond	mat0307685-density.jpg
0.490275	32edc6d6a69b4e2da54258d6d4e566ea	(a) Density plot of the spectral weight at Fermi level N(k, E_F) for x=0.03 and 2 δ =0.03125 (N=64). This shows the Fermi surface state of the metallic diagonal stripe. The region of 2π× 2π reciprocal space is presented. (b) The combination of N(k,E_F) from two domains is drawn, i.e., the domain with Q=2π(1/2±δ, 1/2±δ) and the 90^∘-rotated one with Q=2π(1/2∓δ, 1/2±δ).	cond	mat0307685-fermi1.jpg
0.478452	ba2e0fd749534097b5bf1012d4eeda0d	Density plot of the spectral weight at Fermi level N(k,E_F) for 2δ=0.05 (N=40). (a) x=0.049, (b) x=0.048 and (c) x=0.047.	cond	mat0307685-fermi2.jpg
0.406599	8aa829fa97eb45e3819123612b52d7ed	Density plot of the spectral weight N(k,E) for 2δ=0.05 along the diagonal path k: (-π,π) – (0,0). (a) x=0.049, (b) x=0.048, (c) x=0.047.	cond	mat0307685-spctrl.jpg
0.435854	c293da71174045f2b14f5b8ffbf71d8c	Feynman diagrams contributing to Γ_dd. The dashed lines symbolize the element G_dd of the Gaussian propagator. Lines half dashed and half solid with an index, say a, stand for G_ad. Solid lines with 2 indices, say a and b, visualize G_ab. The ticks indicate derivatives with respect to the reference space coordinate with an index specifying the component.	cond	mat0307686-diagrams1.jpg
0.497267	d6728d018fc14a0fa71f8abb83e59d9d	Feynman diagrams contributing to Γ_ad. The meaning of the symbols is the same as in Fig. <ref>.	cond	mat0307686-diagrams2.jpg
0.446992	f7287dbaf9d64177bd90ff3e233349cb	Feynman diagrams contributing to Γ_ab. The meaning of the symbols is the same as in Fig. <ref>.	cond	mat0307686-diagrams3.jpg
0.434664	3f51839c22d04e0491d39e04e4f0da55	(a) Schematic diagram of a non-magnetic semiconductor spin transistor. The contacts involving extra (shaded) layers represent metal-on-insulator gates. The spin relaxation time in the 2DEG lateral transport channel is controlled using an applied electric field. (b) Calculated crystal magnetic field for HH1 in the GaSb/AlSb quantum well within the proposed spin injector/detector for a fixed in-plane electron wavevector (k_\|\|) of 0.03 Å^-1 versus in-plane angle (ϕ). ϕ=0 corresponds to the [001̅] direction. (c) Schematic diagram of the calculated field in (b). Due to the field characteristics in (b) and (c), the side contacts on the RIT structures must be oriented with the [1̅10] axis, however the direction of transport in the InAs 2DEG is unrestricted. Lateral transport along [1̅10] is shown only for simplicity of illustration.	cond	mat0307687-110SpinValveAndOmega.jpg
0.423896	0a1b1177aeb44316b595599c3aa2f1e3	Calculated longitudinal spin relaxation time in the (110) InAs/AlSb quantum well as a function of electric field along the growth direction for a lattice temperature of 77K. A momentum relaxation time of 100 fs was assumed. Inset: Calculated crystal magnetic field for an applied field of E=0 kV/cm and E=50 kV/cm, illustrating the growth of the in-plane Rashba field component with applied bias.	cond	mat0307687-BiasDepT1InAs2DEG.jpg
0.416863	66f70f4023e6492c9826a7b86f24df17	Description of a spin filter and detector based on RIT in a InAs/AlSb/GaSb/AlSb/InAs heterostructure. (a) Calculated spin splitting in a GaSb/AlSb quantum well versus quantum well thickness (L_AlSb = 60 Å); (b) Overlay of the calculated band structure of the 13 ÅGaSb/AlSb quantum well, the bulk InAs emitter, and the 215 ÅInAs/AlSb quantum well forming the lateral transport channel. For the GaSb quantum well, spin up (down) states with respect to the (110) growth direction (+z) are indicated by the dotted (solid) curves. For bulk InAs and the weakly confined 2DEG, the spin splittings are not resolvable on this energy scale. The zero of energy has been chosen at the edge of the first conduction subband (C1) of the InAs 2DEG; (c),(d) Close-up view of the states involved in resonant tunneling, under conditions of (c) spin injection and (d) spin detection. +z (-z) polarized electrons are indicated by the shaded (diagonal striped) region.	cond	mat0307687-SpinFilter.jpg
0.442778	89524ef0f9c9404e895f1edfc0a64ea1	CPU time (sec) of ten separate runs for cluster size N ≤ 201. The square boxes denote the average values and the error bars indicate the ranges of the values. The partially successful runs (N=184,188-192,198,199) are excluded (See text). The circles denote the result for N ≤ 150 reported in Ref. <cit.> after rescaling of the CPU clocks.	cond	mat0307690-cpu5.jpg
0.435299	8203d65096024aa99a11ed8b44dc02dd	Schematic figure showing the search procedure of CSA. The boxes represent the identical phase space. (a) Initially, we cover the phase space by large spheres centered on randomly chosen local minima denoted by ×, and replace the centers with lower-energy local minima. When A is replaced by α, the sphere moves in the direction of the arrow. (b) As the algorithm proceeds and the energies of the representative configurations at the centers of the spheres are lowered, the size of the spheres are reduced and the search space is narrowed down to small basins of low-lying local minima.	cond	mat0307690-sphere.jpg
0.439563	5f48c5a3c4924dea88610a4a1cfa4f07	Full widths at half-maximum for the NiPd alloy as function of frequency for different directions in k-space and different modes without (left) and with (right) the inclusion of the scattering length fluctuation.The filled circles along with the error bars are the experimental data <cit.>	cond	mat0307697-fig3.jpg
0.406132	2b0da10767c5475fb4e15b0660225863	Geometry of Hall bar. W is the width of the Hall bar. Two current contacts are used as a drain and a source (contacts 1 and 5). Six other lateral contact are used for measuring voltage drops. The magnetic polarity is positive here.	cond	mat0307702-Figure1.jpg
0.477102	9ee5324c7ca64f00a326d6e3f172bdd7		cond	mat0307704-2DAllDataPlot.jpg
0.497281	d06317cf18864e4ea082fc9286d5af3c		cond	mat0307704-3DFigurePlot.jpg
0.502083	3358a249c26046afabb4a9afd69735ea		cond	mat0307704-OneDFig1Plot.jpg
0.535973	70e11a14ad8049adbfe420334ba205ea		cond	mat0307704-OneDPlot.jpg
0.423341	7ae5284f38ed4fe89541b7de4d65c164		cond	mat0307704-ThreeDConPlot.jpg
0.419477	abcd8e9743a74ac2ac47650aa304734e		cond	mat0307704-perrings3.jpg
0.44676	082633a75bdb4800ab6c106546a5876f	(a) A schematic view of the system. A long annular Josephson junction without any trapped vortices is placed in the in-plane external magnetic field H and biased by uniform current I. (b) Generation of a confined vortex-antivortex pair with the center at x=L/2. (c) Numerically simulated evolution of the magnetic field distribution, as the Josephson junction switches into the resistive state. The emerging vortex and antivortex moving in opposite directions are seen. (d) The magnetic field dependence of the critical current for the annular junction with L≡π d /λ_J =10.5: experimental data measured at T = 850 mK (circles), numerically calculated I_c(H) (dotted line), and I_c(H) predicted by Eq. (<ref>) (dashed line).	cond	mat0307705-Fig1.jpg
0.387861	6f0ec344a45e4424a04f6081c67befac	(a) Switching current distributions P(I-⟨ I ⟩) at I_H=35 μA shown at different bath temperatures T. The data are plotted relative to the mean value ⟨ I ⟩ of the switching current at each temperature. (b) Standard deviation σ of P(I) distributions versus bath temperature. Different colors correspond to different values of magnetic field.	cond	mat0307705-Fig2.jpg
0.604778	f326c0f88e784d86bbc458e7f6ed9431	Standard deviation σ of P(I) distribution versus magnetic field H in the temperature range between 40 mK and 4.0 K: experiment (dots), theory (dashed line)s.	cond	mat0307705-Fig3.jpg
0.499979	aebca53d9e2e40948b1f66164052f569	Hole digging method. Magnetization plotted versus applied longitudinal field. Steps 1 and 2: a transverse digging field, H_dig= 0 (thin lines) H_dig= 0.2 T (thick lines), is applied along ϕ_dig=0 during the crossing of resonance k=6 back and forth. Step 3: resonance k=6 is crossed after the hole digging process in the presence of a transverse field, H_T=0.2 T applied along ϕ=0 and 180^o for both cases.	cond	mat0307706-fig1.jpg
0.414261	fe5562545e6e4bdf84d00c7f716a4321	Hole digging measurements. (A) Measured MQT probability for k=6 as a function of the angle and magnitude of the transverse field and (B) calculation of MQT probability of resonance k=6 for different transverse fields H_T=H_dig at ν= 0.4 T/min., as described in the text.	cond	mat0307706-fig2.jpg
0.448253	026b4290f94743398b2bac52e6de81f1	Hole digging measurements. (A) Measured MQT probability for k=6 as a function of the angle of the transverse field (H_T=0.2 T) and magnitude of the digging field H_dig (B) Calculation of the probability as described in the text.	cond	mat0307706-fig3.jpg
0.395785	42a2fd44a7be4b3b88dfdfb4a1ea4243	Multi-crossing relaxation curves of resonance k=6 for different applied transverse fields. The illustrations represent the portion of the tilts distribution that relaxes at n=1.	cond	mat0307706-fig4.jpg
0.401732	c1a7d960ce74471f8968e93836533dc6	Notations introduced to account for the wide angle collection of the emitted light by a dipole, located at the origin of the (X,Y,Z) framework. The direction of the dipole μ⃗ is defined by the angles (θ,ϕ). The direction of the wave vector k⃗ corresponding to the radiated field, is defined by the angles (u,v).	cond	mat0307708-dessin_1.jpg
0.434599	3b356a93d00141a48b74560dd83d6256	Position and orientation of the acceptor μ⃗_2 relative to the position and orientation of the donor μ⃗_1. The orientation of the donor μ⃗_1 is defined by the (θ_1,ϕ_1) angles. The orientation of the unitary vector u⃗_12 along the line connecting the two chromophores is defined by the (ρ,ξ) angles in the (θ_1,ϕ_1) framework. The orientation of the acceptor μ⃗_2 in the (ρ,ξ) framework is defined by the (θ_2,ϕ_2) angles in the local framework of molecule 2 (shown in dotted lines).	cond	mat0307708-dessin_3.jpg
0.448172	542dbdc6a10c4e5c958a6ce4b54a4fc8	Nonlinear microscopy setup: HP filter: high pass filter which rejects visible light; P: polarizer; HWP: rotating half-wave plate; Obj: microscope objective (× 60, NA=1.4); DM: dichroic mirror; F: interference filter selecting either the SHG signal at 493 nm or the TPF signal at 580 nm; IR filter: filter rejecting the residual incident (near IR) laser beam; PBS: polarizing beamsplitter selecting X and Y polarization states of the emission; APD: avalanche photodiodes. An additional beamsplitter (BS) can be introduced for spectroscopic measurements. During the polarization analysis, we remove this beamsplitter in order to not perturb the polarization state of the detected signal.	cond	mat0307708-montage_4.jpg
0.540783	c0ddd111597242ce80d750501bbc565a	DC resistivity of both as-deposited carbon nanotube films and ones immersed in water and redeposited on glass slides. Resistivity is given in terms of Ohms per square of the 2D films. The small differences between films is within the typical varibility of as-deposited films.	cond	mat0307712-NTRes.jpg
0.392636	3cd9e2788fbf408597fa3df33fd4449e	Large relatively uniform films can be deposited on substrates of arbitrary composition. Shown is a redeposited nanotube film on a microscope coverslide.	cond	mat0307712-NTfilms2.jpg
0.446145	7b6d32bf12e141bcbae44311ff2c968e	SEM plots of nanotube films. The inset shows a 200 nm reference size mark. (a) Film deposited on alumina filter substrate without water immersion step. (b) Film deposited with water immersion step. The film's microstructure is unaffected by water immersion.	cond	mat0307712-SEM.jpg
0.503045	3f865cfeee604495a3316293615cfbd2	Excitons represented by operators C^†, D^†, F^†, and H^†. Energy levels occupied by electrons [ i.e., S↑ (Symmetric and up-spin) and S↓ (Symmetric and down-spin) levels ] are shown by thick lines, while solid and open circles indicate excited electrons into an unoccupied level [Antisymmetric and up-spin (or down-spin)] and holes in the S↑ (or S↓) levels, respectively. The changes in the z component of total spin introduced by C, D, F and H excitons are 0, -1, +1 and 0, respectively.	cond	mat0307722-exciton.jpg
0.475206	838072b9d1ce4909b988c8a98649a38d	The average number of electrons occupying antisymmetric single-particle states in the ground state is shown as a function of Δ_ SAS/E_ C for eight electrons and d/l_ B=1.	cond	mat0307722-numanti.jpg
0.488846	a641479aa4734434b23d6e34eee845fb	Low-lying excitation spectrum as a function of total angular momentum is shown for eight electrons, d/l_ B=1, and Δ_ SAS/E_ C=0.7. Open circles (squares) linked by solid (dashed) line show the spin-triplet (-singlet) excitation spectrum by the HFB approximation. Excitation spectrum obtained by the ED method are shown by solid circles, and spin-triplet (-singlet) ones obtained by the ED method are linked by solid (dashed) lines as a guide to the eye. In the inset, the low-lying excitation spectrum for Δ_ SAS/E_ C=0.6 is shown.	cond	mat0307722-spectrum10.jpg
0.418725	77b72ad61dd94ec98046587711ccaa58	Schematic of the qubit and PC showing lead energy bands. Electrons tunnelling from the source (S) to the drain (D) may do so elastically or inelastically, depicted by arrows. Different transitions induce different jumps, P_i, on the qubit.	cond	mat0307727-DoubleWellSystem.jpg
0.439979	3cf7f8a9bd594cb4bbb2872dea4b689a	Current power spectra, S̃(ω)=2ν^2Δ^2/ϵ^2^2(S(ω)-S(∞)). For a given ν the plot is valid in the region e V/≪1/ν^2. Note the sharp change in the power spectrum at ϕ=e V.	cond	mat0307727-PowerSpectrumND.jpg
0.408242	20ae09cff32f4262814fbbc791d0b95c	Equilibrium ground state occupation probability for a qubit near a PC (solid), and for a thermalised qubit, ρ_gg^therm(∞), at a temperature T=e V/2 (dashed).	cond	mat0307727-QuasiThermal.jpg
0.478817	addbfc4a26fd4c45a032cbc950e16931	Temperature dependence of c and η for various magnitudes of Δ with K_=0.4, K_⊥=0.06, J_⊥=0.03, and ε_elst=0.0095. The condensation and crystallization temperature, T_cond and T_cryst, respectively, are indicated. Locations of the Δ values in (a)-(d) are indicated in the phase diagram of Fig. <ref>.	cond	mat0307731-ceta_simple.jpg
0.500134	00a91c7c1cba47e2b9ba56fd11a53aa7	Temperature dependence of the polarizability, α. Locations of the Δ values in (a)-(d) are indicated in the phase diagram of Fig. <ref>.	cond	mat0307731-de_simple.jpg
0.490991	5e6621cecaa04a439660450d0e6679d2	Temperature dependence of the discontinuity of the ionicity, Δ c.	cond	mat0307731-discon_simple.jpg
0.453701	c21a0f277e2244cbb8a741d3052ee363	Temperature dependence of the unit cell parameter b, b(T). Locations of the Δ values in (a)-(d) are indicated in the phase diagram of Fig. <ref>.	cond	mat0307731-latt_simple.jpg
0.44885	1d6664c572e5479aa74a8531a05d7272	Phase diagram for K_=0.4, K_⊥=0.06, J_⊥=0.03, and ε_elst=0.0095. The solid and dashed lines represent discontinuous and continuous transitions, respectively. TP and CP represent the triple point and the critical point, respectively. Locations of the Δ values used in (a)-(d) of Figs. <ref>, <ref>, and <ref> are indicated by the horizontal arrows.	cond	mat0307731-pd_simple.jpg
0.439182	7879ed4a303c4f15af154cf1a9911b6a	Second moments σ_x(r_12) (solid symbols) and σ_y(r_12) (open symbols) of the the conditional probability functions p (x_23\| r_12) and p (y_23\| r_12), respectively. Data for non-crystalline LiPO_3 at T=2040K and T=592K are compared. The time intervals t=t_12=t_23 are indicated.	cond	mat0307738-fig_10_new.jpg
0.425031	c55ab84c26564157a521dad076e8216b	Three-time correlation functions S_3(t/2, t/2) for non-crystalline LiPO_3 at the indicated temperatures. The results are compared to the expectations for purely heterogeneous dynamics, S_2(t), and for purely homogeneous dynamics, [S_2(t/2)]^2.	cond	mat0307738-fig_11_new.jpg
0.480637	b4958b763b6e4853a2386c5e6b917b3c	H(t) for non-crystalline LiPO_3 at the indicated temperatures. The data were calculated from the results in Fig. 11 using Eq. <ref>.	cond	mat0307738-fig_12_new.jpg
0.481865	51b5201cd8a44864915b31f623db3eb4	Four-time correlation functions S_4(t_s,t,t_s) for non-crystalline LiPO_3 (points) and fits to a KWW function (dashed lines). (a): Data at T=713K for the indicated filter times t_s. (b): Temperature dependence of the curves for comparable filter times, i.e., S_2(t_s)=0.48±0.02 (592K: t_s=145.0ps, 713K: t_s=40.0ps, 1006K: t_s=4.0ps, 1287K: t_s=1.2ps).	cond	mat0307738-fig_13_new.jpg
0.476523	6d20c4e38eaf4703bfbd44a2369c2d14	(a): MSD of the lithium ions, r^2_Li(t), in non-crystalline LiPO_3 at the indicated temperatures. Dashed line: r^2_Li(t)=6D_Lit with D_Li=8.31·10^-7cm^2/s. (b): Temperature dependence of the diffusion constants D_Li, D_O and D_P; solid symbols: N=800, ρ=2.15g/cm^3, open symbols: N=800, p=7.0GPa, vertical stripes: N=400, ρ=2.15g/cm^3, horizontal stripes: N=200, ρ=2.15g/cm^3, lines: Arrhenius fits to the data for N=800.	cond	mat0307738-fig_1_new.jpg
0.436286	3d8f406986314f3ba7b61e63225f72b4	Incoherent intermediate scattering function F_s(q_m=2.28Å^-1,t) for the lithium ions in non-crystalline LiPO_3 at the indicated temperatures (N=800, ρ=2.15g/cm^3). Inset: Temperature dependence of the mean correlation time τ_FS; solid symbols: N=800, vertical stripes N=400, horizontal stripes: N=200, line: Fit to an Arrhenius law for N=800.	cond	mat0307738-fig_2_new.jpg
0.448962	2027ab9620444ebf8731027dabfc82eb	Representative trajectories of the lithium ions in non-crystalline LiPO_3. Left hand side: Trajectories at T=2040K during a time interval Δ t=3ps. Right hand side: Trajectories at T=592K during a time interval Δ t=100ps.	cond	mat0307738-fig_3_new.jpg
0.426643	6804998185934d49b667f1c2209eb9d9	Space- and time dependence of the self part of the van Hove correlation function G_s(r,t) for non-crystalline LiPO_3 at the indicated temperatures.	cond	mat0307738-fig_4_new.jpg
0.493357	15fc236af7b14d8ba7bf8f5813b417e9	Two-time correlation function S_2(t) at the indicated temperatures.	cond	mat0307738-fig_5_new.jpg
0.417696	fdc9360991c444aca87983b765876e58	Various time constants characterizing lithium ion dynamics in non-crystalline LiPO_3, see text for details.	cond	mat0307738-fig_6_new.jpg
0.456587	ba4404a2d9954a0696efd0afc9860c17	Four-time van Hove correlation function G_4(r,t_s,t,t_s) for the lithium ions in LiPO_3 glass at T=713K. A filter time t_s=204.8ps was used to select three subensembles of lithium ions SE_0, SE_1 and SE_2, see text for details.	cond	mat0307738-fig_7_new.jpg
0.418502	6aa52967bc2145fd87eb1f27dcc26c82	Three-time van Hove correlation functions G_3(r,t_12,t_23) for the lithium ions in LiPO_3 glass at T=592K	cond	mat0307738-fig_8_new.jpg
0.388703	8c31dcbf3527471282f4b6e7120159be	First moment x_23(r_12) of the conditional probability function p (x_23\| r_12) for LiPO_3 glass at T=592K. The time intervals t_12 and t_23 are indicated.	cond	mat0307738-fig_9_new.jpg
0.519764	e85f563dde714c87bf7e7a4f9f386914	Schematic of a current-carrying wire between two bulk electrodes. An atom is moved from a point A to a point B along two different paths indicated as solid lines. d is the largest distance of the atom from the wire along the vacuum path. Electrons flow from right to left.	cond	mat0307739-fig1vacuum.jpg
0.407794	066bd1eed0e844f393141e82ad0539a4	Density of states due to the populated global current-carrying states originating from the right electrode for the system with the Si atom, minus the same quantity for the electrode-electrode system without the atom, at 0.1 V and for different separations of the jellium edges. Zero of energy corresponds to the right electrochemical potential. The vertical dotted line indicates the position of the left electrochemical potential.	cond	mat0307739-fig2vacuum.jpg
0.421735	3a4f85b28e104374840f7ec6db27898e	Current-induced resonant vacuum dipole as defined in the text for a jellium-jellium edge distance of 10 a.u. Dark area on the right of the nucleus (represented by a dot) corresponds to negative charge.	cond	mat0307739-fig3vacuum.jpg
0.496154	e867cf06f2c645c2847c74cef6841228	Current (right scale) and current-induced force (left scale) for a single Si atom between two bulk electrodes as a function of distance between them.	cond	mat0307739-fig4vacuum.jpg
0.517965	ce63da27259e4e89bf161227a95b1b8e	Different nonlinear frequency dependencies for eqn. (<ref>). Note the piecewise linear functions, as the number of neighbors m and thus the frequencies f have mostly discrete values.	cond	mat0307742-voter2a.jpg
0.418555	95fd95a6cb1647f9bfcb66e9c1beaf68	(a) Schematic picture of our sample with two quantum dots QDA and QDB. The top-gate controls the coupling of the dots without depleting the 2DES in the drain area. (b) Colorized SEM picture after the local oxidation step (2) including mesa (grey), inner marker set (4 yellow crosses, the one in the lower left corner is highlighted by a white arrow), coarse part of the gate (yellow), and oxide lines (blue). The outer marker set is not shown. (c) Magnified colorized AFM image of the double-dot structure. (d) The same sample after adding the top-gate (yellow) by e-beam lithography.	cond	mat0307743-fig1.jpg
0.428333	4de288d5c43b466fa4b959dd274d3271	(a), (b) Grey scale plot of the linear conductance G as a function of in-plane gate voltages V_G2, V_G1 for different interdot coupling strengths. In the hexagonal shaped Coulomb blockade regions the electron number (m,n) on dots A and B is stable. (c),(d) Traces as marked in (a),(b). The graphs clearly show the dependence of the Coulomb peak splitting on top gate voltage.	cond	mat0307743-fig2.jpg
0.460418	ef89c7eaf95c4a14890d7d0f93fcd13f	(a) Peak spacing Δ V_P and peak splitting Δ V_S are determined from a grey scale plot of the differential conductance G as a function of gate voltages V_G2 and V_G1. (b) Fractional peak splitting F = 2 Δ V_S / Δ V_P as a function of top gate voltage V_T.	cond	mat0307743-fig3.jpg
0.491958	090359cec59f4090a88d969067c21c5a	Contour plot showing the variation E_t( R)-E_min near the minimum R_min (which is chosen as the origin). From the contour closest to the minimum (the closed one) to the more distant ones, the energy contours correspond to E_t( R)-E_min = 0.005, 0.01, 0.05, 0.1, 0.5, 1 and 5 K.	cond	mat0307748-fig2.jpg
0.418393	32447fc4613c462a96e8a7fb01dab9fa	Density of H_2 molecules as a function of BEC transition temperature.	cond	mat0307748-fig3.jpg
0.382093	3b6b8cfeb6394954b2a95dcb5373f72a	Excitation energies (in K) ħω_1, ħω_2 of one H_2 molecule in the potential well of the groove (dashed and dot-dashed lines, respectively) together with the ground state eigenvalue ħ (ω_1 + ω_2)/2, full curve, as functions of radius R (in Å) for the symmetric configuration R = R'.	cond	mat0307748-fig4.jpg
0.485912	152dd376dc4c497faffe623c31f1adee	Isoenergy contours of the excitation energies ħω_1, ħω_2 (upper and lower panels, respectively) as functions of radii R, R' (in Å). Contours run between 100 K and 200 K in steps of 4K in both graphs.	cond	mat0307748-fig5.jpg
0.477229	79ed3ed0afef42ec876b8a2ed07d8a4a	(a) Normalized (to ambient conditions) log-moment, bulk modulus, and thermal mean-square displacement of Au at T = 296 K from electronic structure calculations at V/V_0 = 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.1. (b) Corresponding Grüneisen parameters using Eq. (<ref>). γ(V_0) = 2.95 <cit.> (cross) is shown for reference. Insert: Corresponding Grüneisen parameters using Eq. (<ref>).	cond	mat0307750-Fig1.jpg
0.42223	6e9f1d02d0f6411794229315a09a5db1	(a) Normalized (to ambient conditions) log-moment, bulk modulus, and thermal mean-square displacement of Cu at T = 296 K from electronic structure calculations at V/V_0 = 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.1. (b) Corresponding Grüneisen parameters using Eq. (<ref>). γ(V_0) = 2.02 <cit.> (cross) is shown for reference. Insert: Corresponding Grüneisen parameters using Eq. (<ref>).	cond	mat0307750-Fig2.jpg
0.473111	84ec83aff8d94eddabc9d72f851d0fe5	A Voronoi cell defined by node P_i,t-1 at hierarchy t and a daughter network and respective Voronoi partition at the subsequent hierarchical level.	cond	mat0307754-fig_hier.jpg
0.48648	9cff23c93aca4273ad0f5eeb08f64dd0	(a) The longitudinal linear magnetoresistivity R_xx^ (i) induced by remote-impurity scattering in a GaAs-based heterosystem subjected to crossed magnetic fields B and in-plane linearly polarized HF fields E_ssin(ω t) of frequency ω/2π=0.1 THz with several different amplitudes at lattice temperature T=1 K. ω_c≡ eB/m stands for the cyclotron frequency. The other parameters are: electron density N_ e=3.0× 10^11 cm^-2, zero-magnetic-field linear dc mobility μ_0(1 K)=2.4× 10^7 cm^2 V^-1 s^-1, and the broadening coefficient α=12. The electron temperature is set to be T_ e=T. (b) Parameters δ_+ and δ_- for locations of resistance maxima and minima at several HF field amplitudes. (c) The photoresistivity R_xx^ (i)-R_xx^ (i)(E_s=0) at maxima and at minima of j=1 and j=2 against the amplitude of the HF field. (d) R_xx^ (i)/R_xx^ (i)(E_s=0) is shown against E_s^2 on logarithmic scale for j=2,3 and 4.	cond	mat0307757-fig1.jpg
0.430939	57e5210af39048e3baeea6e5e9a75400	(a) The linear magnetoresistivity R_xx^ (i) induced by background-impurity scattering in a GaAs-based 2DEG subjected to linearly polarized HF fields E_ssin(ω t) of frequency ω/2π=0.1 THz. The system parameters are the same as indicated in Fig. 1. (b) The background impurity-induced photoresistivity R_xx^ (i)-R_xx^ (i)(0) at maxima and at minima of j=1 and j=2 shown in Fig. 2a is plotted against the amplitude of the HF field.	cond	mat0307757-fig2.jpg
0.462392	404db984c5b743b187c447af2739ae0b	Remote-impurity induced nonlinear longitudinal magnetoresistivity R_xx^ (i) as defined in Eq.(<ref>) in the GaAs-based 2DEG subjected to crossed magnetic fields B and an in-plane linearly polarized HF field E_ssin(ω t) of frequency ω/2π=0.1 THz and amplitude E_s=80 V/cm under several different dc bias velocities v_0=0,.015,.025,.05 and .1 v_F, where v_F=2.4× 10^5 m/s is the electron Fermi velocity. ω_c≡ eB/m is the cyclotron frequency. The other parameters are the same as indicated in Fig. 1.	cond	mat0307757-fig3.jpg
0.393447	9fecf448ff59438097d8a3f1835c9246	Linear magnetoresistivities R_xx^ (pt) (a) and R_xx^ (pl) (b) induced by transverse and longitudinal acoustic phonons in a GaAs-based 2DES subjected to microwave fields E_ssin(ω t) of frequency ω/2π= 0.1 THz having different amplitudes. The lattice temperature is T=1 K and the electron temperature T_ e=T. The other parameters are: electron density N_ e=3.0× 10^11 cm^-2, dc mobility μ_0(1 K)=2.4× 10^7 cm^2 V^-1 s^-1, and the broadening coefficient α=12.	cond	mat0307757-fig4.jpg
0.393537	86e9b3c023054396aba1e1eb100e7d09	Nonlinear magnetoresistivities R_xx^ (pt) (a) and R_xx^ (pl) (b) induced by transverse and longitudinal acoustic phonons under different dc bias v_0 in a GaAs-based 2DES exposed to microwave fields E_ssin(ω t) of frequency ω/2π= 0.1 THz having amplitude E_s=170 V/cm and E_s=95 V/cm respectively. Here v_ st= 2.48× 10^3 m/s and v_ sl=5.29× 10^3 m/s are the transverse and longitudinal sound speed. The other parameters are the same as indicated in Fig. 4.	cond	mat0307757-fig5.jpg
0.467197	ffbaf4bdee914f0b9560a5a2502e5c23	The impurity-induced linear magnetoresistivity R_xx^ (i) (a) and transverse acoustic phonon induced linear magnetoresistivity R_xx^ (pt) of a GaAs-based 2DES subjected to a microwave field of amplitude E_s=80 V/cm and frequency ω/2π= 0.1 THz at elevated electron temperatures. The lattice temperature is T=1 K. The other parameters are the same as indicated in Fig. 4.	cond	mat0307757-fig6.jpg
0.478051	56f3c72d083c4efc8d23d495f286d7f5	(a) The longitudinal magnetoresistivity R_xx at different lattice temperatures T=1.0,1.5,2.0,2.5,3.0,3.5,4.0 and 4.5 K for a GaAs-based 2DEG subjected to a HF field E_ssin(ω t) of frequency ω/2π=0.1 THz and amplitude E_s=80 V/cm. The system parameters are: electron density N_ e=3.0× 10^11 cm^-2, dc mobility μ_0=2.4× 10^7 cm^2 V^-1 s^-1 at T=1 K, and the broadening coefficient α=12 for all the curves. (b) Zero magnetic field linear mobility induced by transverse acoustic phonon scattering, μ_0^ (pt), by longitudinal acoustic phonon scattering, μ_0^ (pl), and the total mobility μ_0, for the system with μ_0(1 K)=2.4× 10^7cm^2V^-1 s^-1 (dots), and for system with μ_0(1 K)=1.46× 10^7cm^2V^-1 s^-1 (solid line). (c) The amplitudes of the resistivity oscillation R_xx(T)-R_xx(5 K) at maxima and at minima versus temperature T for j=1,2 and 3. (d) R_xx(T)/R_xx(5 K) is shown against 1/T on logarithmic scale for j=2,3 and 4.	cond	mat0307757-fig7.jpg
0.490064	24a73bb54150432bb86126614f15dc50	The longitudinal magnetoresistivity R_xx at different lattice temperature T=1.0,1.5,2.0,2.5,3.0,3.5,4.0,5.0 and 6.0 K for a GaAs-based 2DEG subjected to a HF field E_ssin(ω t) of frequency ω/2π=0.1 THz and amplitude E_s=70 V/cm. The system parameters are: electron density N_ e=3.0× 10^11 cm^-2, dc mobility μ_0(1 K)=1.46× 10^7 cm^2 V^-1 s^-1, and the broadening coefficient α=7.3 for all the curves. Also shown is the dark resistivity (E_s=0) at T=6.5 K.	cond	mat0307757-fig8.jpg
0.389772	0fdccde5e093450e81950f2f77d8a59c	Fluorescence microscope pictures for different water contents W; glass bead diameter: 375 μ m 1a) W = 0.055 %, no real bridges have formed yet 1b) W = 0.2 %, capillary bridges between the beads are clearly visible	cond	mat0307762-figure1.jpg
0.4445	e6df1f8538fe42da92d7c4fe72e85c36	Average number of capillary bridges N in dependence of the water content W	cond	mat0307762-figure2.jpg
0.509791	6f317a9ce58745728e5fee09aa0d9e86	Distribution of the number of bridges: measured (W = 0.15 %, random loose packing; open symbols) simulated <cit.> (closed symbols)	cond	mat0307762-figure3.jpg
0.494256	6edd78182f074a619274506a212d4499	Comparison of the measured number of bridges N with random loose and random dense packings to the N which were calculated from the literature values <cit.> according Eq. <ref> Inset: Number of bead contacts for different packing densities.	cond	mat0307762-figure4.jpg
0.539747	8becf180d4894d6da25240ac5ca944bb	Relative conductance of the domain wall as a function of its width L in a magnetic quantum wire, calculated for indicated values of the parameter p≡ M/ε_F.	cond	mat0307765-Fig1.jpg
0.485884	801b486391f941e59154e2fff76990de	Comparison of the results obtained from direct numerical calculations (solid line) and and from Eq. (16) valid at k_FL≪ 1 (dotted line) for p=0.7.	cond	mat0307765-Fig2.jpg
0.407945	56bdebcd8327490181b309d8b83ff57f	Relative spin conductance of the wire with a domain wall calculated as a function of its width L for indicated values of the parameter p.	cond	mat0307765-Fig3.jpg
0.480419	4bb8a3b55cfc4b02b3baa90bd4b7c7be	Distribution of the spin density of electron gas near a domain wall for different values of p.	cond	mat0307765-Fig4.jpg
0.437435	e2b0f194a8424a27891cfd00a5a5ba22	Center-of-mass trajectory of a toroidal condensate current κ=1 displaced from the trap center. The torus has parameters λ = √(7), σ = 2 √(ħ/2 m_aω_r) and h_0 = 50 ħω_r and interaction strength C= 1000. The figure shows the path traced out over a total time T=100 in the horizontal plane by the condensate center-of-mass following a small horizontal displacement of the trap axis ε = 1. The combination of the x-dipole and y-dipole oscillations leading to precession of the condensate. These dipoles modes are degenerate and nearly in phase. The spectrum density of the x-dipole oscillations is shown in figure <ref>	cond	mat0307766-nfig5.jpg
0.460103	c40cef8ad870402facf4223b5faaf405	Center-of-mass trajectory of a toroidal condensate (current κ=1) after radial displacement. As in figure <ref> the torus has parameters λ = √(7), σ = 2 √(ħ/2 m_aω_r) and h_0 = 50 ħω_r, however the atom number is much higher in this case:C= 4300. The figure shows the path traced out over a time T=100 in the horizontal plane by the condensate center-of-mass following a small horizontal displacement of the trap ε = 1. The center of mass performs a circular motion due to two effects: the x and y dipole states are not degenerate in frequency and the amplitudes are out of phase, by roughly ∼π/2.	cond	mat0307766-nfig6.jpg
0.422739	20a6b75a2b5946da829675d30f11f777	Spectral density of x-dipole of a condensate with circulation κ=1 corresponding to figure <ref>: P_x(ω) The torus parameters are λ = √(7), σ = 2 √(ħ/2 m_aω_r) and h_0 = 50 ħω_r. The condensate interaction strength is C= 1000 with trap displacement ϵ = 1. The figure shows the dominance of three modes, the low frequency m=± 1 doublet, and an excited m=-1 mode. The center of the doublet corresponds to the frequency ω_s= √(2C ⟨ r^-2⟩)≈ 0.58. In the graph the frequency peaks are shifted from the linear response results given in Table <ref> and have a broader splitting than the Bogoliubov approximation. The x-dipole modes, shown above, have frequencies ω_x = 0.421, 0.666, 2.237, 2.441 while the corresponding y-dipole modes have frequencies: ω_y =0.449, 0.657, 2.234, 2.422.	cond	mat0307766-nfig7.jpg
0.485635	e3a03ab8641a4dae821060ee43d23ec6	Spectral density of x-dipole of condensate with circulation κ=1 corresponding to figure <ref>: P_x(ω) The torus parameters are λ = √(7), σ = 2 √(ħ/2 m_aω_r) and h_0 = 50 ħω_r. The condensate interaction strength is C= 4300 with trap displacement ϵ = 1. The center of the doublet corresponds to the frequency ω_s= √(2C ⟨ϕ^2 r^-2⟩)≈ 0.78 The figure shows the shifting upwards of the mode frequencies and a narrowing of the m=± 1 doublet splitting consistent with an expanded condensate with a higher sound speed. The modes shown above have frequencies: ω_x =0.625, 0.804, 2.095, 2.284. The corresponding y dipole modes, not shown, have similar strengths but with frequencies ω_y = 0.657, 0.792, 2.086, 2.275.	cond	mat0307766-nfig8.jpg
0.482499	084b746bc2ac4ebba612a96cae66c71a	Experimental and theoretical photoemission spectrum for δ-Pu. The experimental spectrum is given as dots connected with lines (blue), whereas the theoretical spectra is given as a solid line. The inset shows how the experimental spectrum varies with photon energy.	cond	mat0307767-dpu_fig1.jpg
0.421607	758ed9f430464c34a6fd42bf8e32da58	Heat capacities (in units of k_B) computed with the TT-method estimator as a function of T (in Kelvin) for several values of N. The error bars (two times the standard deviation) are comparable to the thickness of the drawing lines and are not plotted.	cond	mat0307769-501347JCP1.jpg
0.507541	364bf3221cdb446894821c806b0d9b3b	Classical heat capacities (cTT) and quantum heat capacities by the TT-method estimator (qTT) and the modified TT-method estimator (qmTT) as functions of temperature. On this scale, the curves for the last two quantities overlap. The heat capacities are given in units of k_B, whereas the temperature is given in Kelvin. The number of path variables employed for the quantum results is N = 63. The error bars (two times the standard deviation) are comparable to the thickness of the drawing lines and are not plotted.	cond	mat0307769-501347JCP2.jpg
0.484775	5d0d9468fda446ae9819a50bc6cc6ca9	Error bars (in units of k_B) for classical heat capacities (cTT) and quantum heat capacities by the TT-method estimator (qTT) and the modified TT-method estimator (qmTT) as functions of T (given in Kelvin). Also plotted (solid line) is the absolute value of the difference Δ_TT = ⟨ C_V ⟩^TT_β - ⟨ C_V ⟩^mTT_β between the heat capacity values computed with the help of the TT-method and modified TT-method estimators.	cond	mat0307769-501347JCP3.jpg
0.448275	ead2c314a2f149b5894b43420a3efda4	Quantum heat capacities in units of k_B by the TT-method estimator (qTT) and by the TH-method estimator (qTH), respectively. The temperature is given in Kelvin. On this scale, the two curves overlap almost perfectly. The maximum difference between corresponding values on the curves is about 1.5 k_B.	cond	mat0307769-501347JCP4.jpg

0.464755

d633fbc0c84b45c187e5a0c30ff676dc

Particle–hole (top row) vertex Γ^eh which appears in the FLEX approximation. Definition of the FLEX self–energy constructed with the help of the particle–hole vertex (bottom row).

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mat0307682-FLEX_fig01.jpg

0.491727

bcadcf6c99b74b1ca16886df54e36413

Particle–particle (top row) vertex Γ^ee which appears in the FLEX approximation. Definition of the FLEX self–energy constructed with the help of the particle–particle vertex (bottom row).

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mat0307682-FLEX_fig02.jpg

0.50528

26f3f529ddc44ed99f8a08fde2975887

Particle–hole vertex Γ^v corresponding to the third scattering channel is given in top row. Definition of the corresponding self–energy is presented in the bottom row.

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mat0307682-FLEX_fig03.jpg

0.494602

ab0de0badc9f4a9d9cfb0e002f4d81c7

Spin density (-1)^i_x+i_yS_z,i and charge density n_i for x=0.049 (a), 0.048 (b) and 0.047 (c). Horizontal axis shows the site-index. The incommensurability is fixed at 2δ=0.05. (d) Charge structures around the center of stripe in (a)-(c) are magnified to see the x-dependence of the structure. The vertical dotted line shows the center of the stripe i.e. the domain wall. For x=0.047, the domain wall is located in a bond center. For x=0.049 and x=0.048, it is away from the bond center.

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mat0307685-density.jpg

0.490275

32edc6d6a69b4e2da54258d6d4e566ea

(a) Density plot of the spectral weight at Fermi level N(k, E_F) for x=0.03 and 2 δ =0.03125 (N=64). This shows the Fermi surface state of the metallic diagonal stripe. The region of 2π× 2π reciprocal space is presented. (b) The combination of N(k,E_F) from two domains is drawn, i.e., the domain with Q=2π(1/2±δ, 1/2±δ) and the 90^∘-rotated one with Q=2π(1/2∓δ, 1/2±δ).

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mat0307685-fermi1.jpg

0.478452

ba2e0fd749534097b5bf1012d4eeda0d

Density plot of the spectral weight at Fermi level N(k,E_F) for 2δ=0.05 (N=40). (a) x=0.049, (b) x=0.048 and (c) x=0.047.

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mat0307685-fermi2.jpg

0.406599

8aa829fa97eb45e3819123612b52d7ed

Density plot of the spectral weight N(k,E) for 2δ=0.05 along the diagonal path k: (-π,π) – (0,0). (a) x=0.049, (b) x=0.048, (c) x=0.047.

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mat0307685-spctrl.jpg

0.435854

c293da71174045f2b14f5b8ffbf71d8c

Feynman diagrams contributing to Γ_dd. The dashed lines symbolize the element G_dd of the Gaussian propagator. Lines half dashed and half solid with an index, say a, stand for G_ad. Solid lines with 2 indices, say a and b, visualize G_ab. The ticks indicate derivatives with respect to the reference space coordinate with an index specifying the component.

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mat0307686-diagrams1.jpg

0.497267

d6728d018fc14a0fa71f8abb83e59d9d

Feynman diagrams contributing to Γ_ad. The meaning of the symbols is the same as in Fig. <ref>.

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mat0307686-diagrams2.jpg

0.446992

f7287dbaf9d64177bd90ff3e233349cb

Feynman diagrams contributing to Γ_ab. The meaning of the symbols is the same as in Fig. <ref>.

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mat0307686-diagrams3.jpg

0.434664

3f51839c22d04e0491d39e04e4f0da55

(a) Schematic diagram of a non-magnetic semiconductor spin transistor. The contacts involving extra (shaded) layers represent metal-on-insulator gates. The spin relaxation time in the 2DEG lateral transport channel is controlled using an applied electric field. (b) Calculated crystal magnetic field for HH1 in the GaSb/AlSb quantum well within the proposed spin injector/detector for a fixed in-plane electron wavevector (k_||) of 0.03 Å^-1 versus in-plane angle (ϕ). ϕ=0 corresponds to the [001̅] direction. (c) Schematic diagram of the calculated field in (b). Due to the field characteristics in (b) and (c), the side contacts on the RIT structures must be oriented with the [1̅10] axis, however the direction of transport in the InAs 2DEG is unrestricted. Lateral transport along [1̅10] is shown only for simplicity of illustration.

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mat0307687-110SpinValveAndOmega.jpg

0.423896

0a1b1177aeb44316b595599c3aa2f1e3

Calculated longitudinal spin relaxation time in the (110) InAs/AlSb quantum well as a function of electric field along the growth direction for a lattice temperature of 77K. A momentum relaxation time of 100 fs was assumed. Inset: Calculated crystal magnetic field for an applied field of E=0 kV/cm and E=50 kV/cm, illustrating the growth of the in-plane Rashba field component with applied bias.

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mat0307687-BiasDepT1InAs2DEG.jpg

0.416863

66f70f4023e6492c9826a7b86f24df17

Description of a spin filter and detector based on RIT in a InAs/AlSb/GaSb/AlSb/InAs heterostructure. (a) Calculated spin splitting in a GaSb/AlSb quantum well versus quantum well thickness (L_AlSb = 60 Å); (b) Overlay of the calculated band structure of the 13 ÅGaSb/AlSb quantum well, the bulk InAs emitter, and the 215 ÅInAs/AlSb quantum well forming the lateral transport channel. For the GaSb quantum well, spin up (down) states with respect to the (110) growth direction (+z) are indicated by the dotted (solid) curves. For bulk InAs and the weakly confined 2DEG, the spin splittings are not resolvable on this energy scale. The zero of energy has been chosen at the edge of the first conduction subband (C1) of the InAs 2DEG; (c),(d) Close-up view of the states involved in resonant tunneling, under conditions of (c) spin injection and (d) spin detection. +z (-z) polarized electrons are indicated by the shaded (diagonal striped) region.

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mat0307687-SpinFilter.jpg

0.442778

89524ef0f9c9404e895f1edfc0a64ea1

CPU time (sec) of ten separate runs for cluster size N ≤ 201. The square boxes denote the average values and the error bars indicate the ranges of the values. The partially successful runs (N=184,188-192,198,199) are excluded (See text). The circles denote the result for N ≤ 150 reported in Ref. <cit.> after rescaling of the CPU clocks.

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mat0307690-cpu5.jpg

0.435299

8203d65096024aa99a11ed8b44dc02dd

Schematic figure showing the search procedure of CSA. The boxes represent the identical phase space. (a) Initially, we cover the phase space by large spheres centered on randomly chosen local minima denoted by ×, and replace the centers with lower-energy local minima. When A is replaced by α, the sphere moves in the direction of the arrow. (b) As the algorithm proceeds and the energies of the representative configurations at the centers of the spheres are lowered, the size of the spheres are reduced and the search space is narrowed down to small basins of low-lying local minima.

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mat0307690-sphere.jpg

0.439563

5f48c5a3c4924dea88610a4a1cfa4f07

Full widths at half-maximum for the NiPd alloy as function of frequency for different directions in k-space and different modes without (left) and with (right) the inclusion of the scattering length fluctuation.The filled circles along with the error bars are the experimental data <cit.>

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mat0307697-fig3.jpg

0.406132

2b0da10767c5475fb4e15b0660225863

Geometry of Hall bar. W is the width of the Hall bar. Two current contacts are used as a drain and a source (contacts 1 and 5). Six other lateral contact are used for measuring voltage drops. The magnetic polarity is positive here.

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mat0307702-Figure1.jpg

0.477102

9ee5324c7ca64f00a326d6e3f172bdd7

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mat0307704-2DAllDataPlot.jpg

0.497281

d06317cf18864e4ea082fc9286d5af3c

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mat0307704-3DFigurePlot.jpg

0.502083

3358a249c26046afabb4a9afd69735ea

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mat0307704-OneDFig1Plot.jpg

0.535973

70e11a14ad8049adbfe420334ba205ea

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mat0307704-OneDPlot.jpg

0.423341

7ae5284f38ed4fe89541b7de4d65c164

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mat0307704-ThreeDConPlot.jpg

0.419477

abcd8e9743a74ac2ac47650aa304734e

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mat0307704-perrings3.jpg

0.44676

082633a75bdb4800ab6c106546a5876f

(a) A schematic view of the system. A long annular Josephson junction without any trapped vortices is placed in the in-plane external magnetic field H and biased by uniform current I. (b) Generation of a confined vortex-antivortex pair with the center at x=L/2. (c) Numerically simulated evolution of the magnetic field distribution, as the Josephson junction switches into the resistive state. The emerging vortex and antivortex moving in opposite directions are seen. (d) The magnetic field dependence of the critical current for the annular junction with L≡π d /λ_J =10.5: experimental data measured at T = 850 mK (circles), numerically calculated I_c(H) (dotted line), and I_c(H) predicted by Eq. (<ref>) (dashed line).

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mat0307705-Fig1.jpg

0.387861

6f0ec344a45e4424a04f6081c67befac

(a) Switching current distributions P(I-⟨ I ⟩) at I_H=35 μA shown at different bath temperatures T. The data are plotted relative to the mean value ⟨ I ⟩ of the switching current at each temperature. (b) Standard deviation σ of P(I) distributions versus bath temperature. Different colors correspond to different values of magnetic field.

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mat0307705-Fig2.jpg

0.604778

f326c0f88e784d86bbc458e7f6ed9431

Standard deviation σ of P(I) distribution versus magnetic field H in the temperature range between 40 mK and 4.0 K: experiment (dots), theory (dashed line)s.

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mat0307705-Fig3.jpg

0.499979

aebca53d9e2e40948b1f66164052f569

Hole digging method. Magnetization plotted versus applied longitudinal field. Steps 1 and 2: a transverse digging field, H_dig= 0 (thin lines) H_dig= 0.2 T (thick lines), is applied along ϕ_dig=0 during the crossing of resonance k=6 back and forth. Step 3: resonance k=6 is crossed after the hole digging process in the presence of a transverse field, H_T=0.2 T applied along ϕ=0 and 180^o for both cases.

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mat0307706-fig1.jpg

0.414261

fe5562545e6e4bdf84d00c7f716a4321

Hole digging measurements. (A) Measured MQT probability for k=6 as a function of the angle and magnitude of the transverse field and (B) calculation of MQT probability of resonance k=6 for different transverse fields H_T=H_dig at ν= 0.4 T/min., as described in the text.

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mat0307706-fig2.jpg

0.448253

026b4290f94743398b2bac52e6de81f1

Hole digging measurements. (A) Measured MQT probability for k=6 as a function of the angle of the transverse field (H_T=0.2 T) and magnitude of the digging field H_dig (B) Calculation of the probability as described in the text.

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mat0307706-fig3.jpg

0.395785

42a2fd44a7be4b3b88dfdfb4a1ea4243

Multi-crossing relaxation curves of resonance k=6 for different applied transverse fields. The illustrations represent the portion of the tilts distribution that relaxes at n=1.

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mat0307706-fig4.jpg

0.401732

c1a7d960ce74471f8968e93836533dc6

Notations introduced to account for the wide angle collection of the emitted light by a dipole, located at the origin of the (X,Y,Z) framework. The direction of the dipole μ⃗ is defined by the angles (θ,ϕ). The direction of the wave vector k⃗ corresponding to the radiated field, is defined by the angles (u,v).

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mat0307708-dessin_1.jpg

0.434599

3b356a93d00141a48b74560dd83d6256

Position and orientation of the acceptor μ⃗_2 relative to the position and orientation of the donor μ⃗_1. The orientation of the donor μ⃗_1 is defined by the (θ_1,ϕ_1) angles. The orientation of the unitary vector u⃗_12 along the line connecting the two chromophores is defined by the (ρ,ξ) angles in the (θ_1,ϕ_1) framework. The orientation of the acceptor μ⃗_2 in the (ρ,ξ) framework is defined by the (θ_2,ϕ_2) angles in the local framework of molecule 2 (shown in dotted lines).

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mat0307708-dessin_3.jpg

0.448172

542dbdc6a10c4e5c958a6ce4b54a4fc8

Nonlinear microscopy setup: HP filter: high pass filter which rejects visible light; P: polarizer; HWP: rotating half-wave plate; Obj: microscope objective (× 60, NA=1.4); DM: dichroic mirror; F: interference filter selecting either the SHG signal at 493 nm or the TPF signal at 580 nm; IR filter: filter rejecting the residual incident (near IR) laser beam; PBS: polarizing beamsplitter selecting X and Y polarization states of the emission; APD: avalanche photodiodes. An additional beamsplitter (BS) can be introduced for spectroscopic measurements. During the polarization analysis, we remove this beamsplitter in order to not perturb the polarization state of the detected signal.

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mat0307708-montage_4.jpg

0.540783

c0ddd111597242ce80d750501bbc565a

DC resistivity of both as-deposited carbon nanotube films and ones immersed in water and redeposited on glass slides. Resistivity is given in terms of Ohms per square of the 2D films. The small differences between films is within the typical varibility of as-deposited films.

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mat0307712-NTRes.jpg

0.392636

3cd9e2788fbf408597fa3df33fd4449e

Large relatively uniform films can be deposited on substrates of arbitrary composition. Shown is a redeposited nanotube film on a microscope coverslide.

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mat0307712-NTfilms2.jpg

0.446145

7b6d32bf12e141bcbae44311ff2c968e

SEM plots of nanotube films. The inset shows a 200 nm reference size mark. (a) Film deposited on alumina filter substrate without water immersion step. (b) Film deposited with water immersion step. The film's microstructure is unaffected by water immersion.

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mat0307712-SEM.jpg

0.503045

3f865cfeee604495a3316293615cfbd2

Excitons represented by operators C^†, D^†, F^†, and H^†. Energy levels occupied by electrons [ i.e., S↑ (Symmetric and up-spin) and S↓ (Symmetric and down-spin) levels ] are shown by thick lines, while solid and open circles indicate excited electrons into an unoccupied level [Antisymmetric and up-spin (or down-spin)] and holes in the S↑ (or S↓) levels, respectively. The changes in the z component of total spin introduced by C, D, F and H excitons are 0, -1, +1 and 0, respectively.

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mat0307722-exciton.jpg

0.475206

838072b9d1ce4909b988c8a98649a38d

The average number of electrons occupying antisymmetric single-particle states in the ground state is shown as a function of Δ_ SAS/E_ C for eight electrons and d/l_ B=1.

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mat0307722-numanti.jpg

0.488846

a641479aa4734434b23d6e34eee845fb

Low-lying excitation spectrum as a function of total angular momentum is shown for eight electrons, d/l_ B=1, and Δ_ SAS/E_ C=0.7. Open circles (squares) linked by solid (dashed) line show the spin-triplet (-singlet) excitation spectrum by the HFB approximation. Excitation spectrum obtained by the ED method are shown by solid circles, and spin-triplet (-singlet) ones obtained by the ED method are linked by solid (dashed) lines as a guide to the eye. In the inset, the low-lying excitation spectrum for Δ_ SAS/E_ C=0.6 is shown.

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mat0307722-spectrum10.jpg

0.418725

77b72ad61dd94ec98046587711ccaa58

Schematic of the qubit and PC showing lead energy bands. Electrons tunnelling from the source (S) to the drain (D) may do so elastically or inelastically, depicted by arrows. Different transitions induce different jumps, P_i, on the qubit.

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mat0307727-DoubleWellSystem.jpg

0.439979

3cf7f8a9bd594cb4bbb2872dea4b689a

Current power spectra, S̃(ω)=2ν^2Δ^2/ϵ^2^2(S(ω)-S(∞)). For a given ν the plot is valid in the region e V/≪1/ν^2. Note the sharp change in the power spectrum at ϕ=e V.

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mat0307727-PowerSpectrumND.jpg

0.408242

20ae09cff32f4262814fbbc791d0b95c

Equilibrium ground state occupation probability for a qubit near a PC (solid), and for a thermalised qubit, ρ_gg^therm(∞), at a temperature T=e V/2 (dashed).

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mat0307727-QuasiThermal.jpg

0.478817

addbfc4a26fd4c45a032cbc950e16931

Temperature dependence of c and η for various magnitudes of Δ with K_=0.4, K_⊥=0.06, J_⊥=0.03, and ε_elst=0.0095. The condensation and crystallization temperature, T_cond and T_cryst, respectively, are indicated. Locations of the Δ values in (a)-(d) are indicated in the phase diagram of Fig. <ref>.

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mat0307731-ceta_simple.jpg

0.500134

00a91c7c1cba47e2b9ba56fd11a53aa7

Temperature dependence of the polarizability, α. Locations of the Δ values in (a)-(d) are indicated in the phase diagram of Fig. <ref>.

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mat0307731-de_simple.jpg

0.490991

5e6621cecaa04a439660450d0e6679d2

Temperature dependence of the discontinuity of the ionicity, Δ c.

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mat0307731-discon_simple.jpg

0.453701

c21a0f277e2244cbb8a741d3052ee363

Temperature dependence of the unit cell parameter b, b(T). Locations of the Δ values in (a)-(d) are indicated in the phase diagram of Fig. <ref>.

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mat0307731-latt_simple.jpg

0.44885

1d6664c572e5479aa74a8531a05d7272

Phase diagram for K_=0.4, K_⊥=0.06, J_⊥=0.03, and ε_elst=0.0095. The solid and dashed lines represent discontinuous and continuous transitions, respectively. TP and CP represent the triple point and the critical point, respectively. Locations of the Δ values used in (a)-(d) of Figs. <ref>, <ref>, and <ref> are indicated by the horizontal arrows.

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mat0307731-pd_simple.jpg

0.439182

7879ed4a303c4f15af154cf1a9911b6a

Second moments σ_x(r_12) (solid symbols) and σ_y(r_12) (open symbols) of the the conditional probability functions p (x_23| r_12) and p (y_23| r_12), respectively. Data for non-crystalline LiPO_3 at T=2040K and T=592K are compared. The time intervals t=t_12=t_23 are indicated.

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mat0307738-fig_10_new.jpg

0.425031

c55ab84c26564157a521dad076e8216b

Three-time correlation functions S_3(t/2, t/2) for non-crystalline LiPO_3 at the indicated temperatures. The results are compared to the expectations for purely heterogeneous dynamics, S_2(t), and for purely homogeneous dynamics, [S_2(t/2)]^2.

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mat0307738-fig_11_new.jpg

0.480637

b4958b763b6e4853a2386c5e6b917b3c

H(t) for non-crystalline LiPO_3 at the indicated temperatures. The data were calculated from the results in Fig. 11 using Eq. <ref>.

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mat0307738-fig_12_new.jpg

0.481865

51b5201cd8a44864915b31f623db3eb4

Four-time correlation functions S_4(t_s,t,t_s) for non-crystalline LiPO_3 (points) and fits to a KWW function (dashed lines). (a): Data at T=713K for the indicated filter times t_s. (b): Temperature dependence of the curves for comparable filter times, i.e., S_2(t_s)=0.48±0.02 (592K: t_s=145.0ps, 713K: t_s=40.0ps, 1006K: t_s=4.0ps, 1287K: t_s=1.2ps).

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mat0307738-fig_13_new.jpg

0.476523

6d20c4e38eaf4703bfbd44a2369c2d14

(a): MSD of the lithium ions, r^2_Li(t), in non-crystalline LiPO_3 at the indicated temperatures. Dashed line: r^2_Li(t)=6D_Lit with D_Li=8.31·10^-7cm^2/s. (b): Temperature dependence of the diffusion constants D_Li, D_O and D_P; solid symbols: N=800, ρ=2.15g/cm^3, open symbols: N=800, p=7.0GPa, vertical stripes: N=400, ρ=2.15g/cm^3, horizontal stripes: N=200, ρ=2.15g/cm^3, lines: Arrhenius fits to the data for N=800.

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mat0307738-fig_1_new.jpg

0.436286

3d8f406986314f3ba7b61e63225f72b4

Incoherent intermediate scattering function F_s(q_m=2.28Å^-1,t) for the lithium ions in non-crystalline LiPO_3 at the indicated temperatures (N=800, ρ=2.15g/cm^3). Inset: Temperature dependence of the mean correlation time τ_FS; solid symbols: N=800, vertical stripes N=400, horizontal stripes: N=200, line: Fit to an Arrhenius law for N=800.

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mat0307738-fig_2_new.jpg

0.448962

2027ab9620444ebf8731027dabfc82eb

Representative trajectories of the lithium ions in non-crystalline LiPO_3. Left hand side: Trajectories at T=2040K during a time interval Δ t=3ps. Right hand side: Trajectories at T=592K during a time interval Δ t=100ps.

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mat0307738-fig_3_new.jpg

0.426643

6804998185934d49b667f1c2209eb9d9

Space- and time dependence of the self part of the van Hove correlation function G_s(r,t) for non-crystalline LiPO_3 at the indicated temperatures.

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mat0307738-fig_4_new.jpg

0.493357

15fc236af7b14d8ba7bf8f5813b417e9

Two-time correlation function S_2(t) at the indicated temperatures.

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mat0307738-fig_5_new.jpg

0.417696

fdc9360991c444aca87983b765876e58

Various time constants characterizing lithium ion dynamics in non-crystalline LiPO_3, see text for details.

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mat0307738-fig_6_new.jpg

0.456587

ba4404a2d9954a0696efd0afc9860c17

Four-time van Hove correlation function G_4(r,t_s,t,t_s) for the lithium ions in LiPO_3 glass at T=713K. A filter time t_s=204.8ps was used to select three subensembles of lithium ions SE_0, SE_1 and SE_2, see text for details.

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mat0307738-fig_7_new.jpg

0.418502

6aa52967bc2145fd87eb1f27dcc26c82

Three-time van Hove correlation functions G_3(r,t_12,t_23) for the lithium ions in LiPO_3 glass at T=592K

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mat0307738-fig_8_new.jpg

0.388703

8c31dcbf3527471282f4b6e7120159be

First moment x_23(r_12) of the conditional probability function p (x_23| r_12) for LiPO_3 glass at T=592K. The time intervals t_12 and t_23 are indicated.

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mat0307738-fig_9_new.jpg

0.519764

e85f563dde714c87bf7e7a4f9f386914

Schematic of a current-carrying wire between two bulk electrodes. An atom is moved from a point A to a point B along two different paths indicated as solid lines. d is the largest distance of the atom from the wire along the vacuum path. Electrons flow from right to left.

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mat0307739-fig1vacuum.jpg

0.407794

066bd1eed0e844f393141e82ad0539a4

Density of states due to the populated global current-carrying states originating from the right electrode for the system with the Si atom, minus the same quantity for the electrode-electrode system without the atom, at 0.1 V and for different separations of the jellium edges. Zero of energy corresponds to the right electrochemical potential. The vertical dotted line indicates the position of the left electrochemical potential.

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mat0307739-fig2vacuum.jpg

0.421735

3a4f85b28e104374840f7ec6db27898e

Current-induced resonant vacuum dipole as defined in the text for a jellium-jellium edge distance of 10 a.u. Dark area on the right of the nucleus (represented by a dot) corresponds to negative charge.

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mat0307739-fig3vacuum.jpg

0.496154

e867cf06f2c645c2847c74cef6841228

Current (right scale) and current-induced force (left scale) for a single Si atom between two bulk electrodes as a function of distance between them.

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mat0307739-fig4vacuum.jpg

0.517965

ce63da27259e4e89bf161227a95b1b8e

Different nonlinear frequency dependencies for eqn. (<ref>). Note the piecewise linear functions, as the number of neighbors m and thus the frequencies f have mostly discrete values.

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mat0307742-voter2a.jpg

0.418555

95fd95a6cb1647f9bfcb66e9c1beaf68

(a) Schematic picture of our sample with two quantum dots QDA and QDB. The top-gate controls the coupling of the dots without depleting the 2DES in the drain area. (b) Colorized SEM picture after the local oxidation step (2) including mesa (grey), inner marker set (4 yellow crosses, the one in the lower left corner is highlighted by a white arrow), coarse part of the gate (yellow), and oxide lines (blue). The outer marker set is not shown. (c) Magnified colorized AFM image of the double-dot structure. (d) The same sample after adding the top-gate (yellow) by e-beam lithography.

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mat0307743-fig1.jpg

0.428333

4de288d5c43b466fa4b959dd274d3271

(a), (b) Grey scale plot of the linear conductance G as a function of in-plane gate voltages V_G2, V_G1 for different interdot coupling strengths. In the hexagonal shaped Coulomb blockade regions the electron number (m,n) on dots A and B is stable. (c),(d) Traces as marked in (a),(b). The graphs clearly show the dependence of the Coulomb peak splitting on top gate voltage.

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mat0307743-fig2.jpg

0.460418

ef89c7eaf95c4a14890d7d0f93fcd13f

(a) Peak spacing Δ V_P and peak splitting Δ V_S are determined from a grey scale plot of the differential conductance G as a function of gate voltages V_G2 and V_G1. (b) Fractional peak splitting F = 2 Δ V_S / Δ V_P as a function of top gate voltage V_T.

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mat0307743-fig3.jpg

0.491958

090359cec59f4090a88d969067c21c5a

Contour plot showing the variation E_t( R)-E_min near the minimum R_min (which is chosen as the origin). From the contour closest to the minimum (the closed one) to the more distant ones, the energy contours correspond to E_t( R)-E_min = 0.005, 0.01, 0.05, 0.1, 0.5, 1 and 5 K.

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mat0307748-fig2.jpg

0.418393

32447fc4613c462a96e8a7fb01dab9fa

Density of H_2 molecules as a function of BEC transition temperature.

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mat0307748-fig3.jpg

0.382093

3b6b8cfeb6394954b2a95dcb5373f72a

Excitation energies (in K) ħω_1, ħω_2 of one H_2 molecule in the potential well of the groove (dashed and dot-dashed lines, respectively) together with the ground state eigenvalue ħ (ω_1 + ω_2)/2, full curve, as functions of radius R (in Å) for the symmetric configuration R = R'.

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mat0307748-fig4.jpg

0.485912

152dd376dc4c497faffe623c31f1adee

Isoenergy contours of the excitation energies ħω_1, ħω_2 (upper and lower panels, respectively) as functions of radii R, R' (in Å). Contours run between 100 K and 200 K in steps of 4K in both graphs.

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mat0307748-fig5.jpg

0.477229

79ed3ed0afef42ec876b8a2ed07d8a4a

(a) Normalized (to ambient conditions) log-moment, bulk modulus, and thermal mean-square displacement of Au at T = 296 K from electronic structure calculations at V/V_0 = 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.1. (b) Corresponding Grüneisen parameters using Eq. (<ref>). γ(V_0) = 2.95 <cit.> (cross) is shown for reference. Insert: Corresponding Grüneisen parameters using Eq. (<ref>).

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mat0307750-Fig1.jpg

0.42223

6e9f1d02d0f6411794229315a09a5db1

(a) Normalized (to ambient conditions) log-moment, bulk modulus, and thermal mean-square displacement of Cu at T = 296 K from electronic structure calculations at V/V_0 = 0.5, 0.6, 0.7, 0.8, 0.9, 1.0, 1.1. (b) Corresponding Grüneisen parameters using Eq. (<ref>). γ(V_0) = 2.02 <cit.> (cross) is shown for reference. Insert: Corresponding Grüneisen parameters using Eq. (<ref>).

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mat0307750-Fig2.jpg

0.473111

84ec83aff8d94eddabc9d72f851d0fe5

A Voronoi cell defined by node P_i,t-1 at hierarchy t and a daughter network and respective Voronoi partition at the subsequent hierarchical level.

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mat0307754-fig_hier.jpg

0.48648

9cff23c93aca4273ad0f5eeb08f64dd0

(a) The longitudinal linear magnetoresistivity R_xx^ (i) induced by remote-impurity scattering in a GaAs-based heterosystem subjected to crossed magnetic fields B and in-plane linearly polarized HF fields E_ssin(ω t) of frequency ω/2π=0.1 THz with several different amplitudes at lattice temperature T=1 K. ω_c≡ eB/m stands for the cyclotron frequency. The other parameters are: electron density N_ e=3.0× 10^11 cm^-2, zero-magnetic-field linear dc mobility μ_0(1 K)=2.4× 10^7 cm^2 V^-1 s^-1, and the broadening coefficient α=12. The electron temperature is set to be T_ e=T. (b) Parameters δ_+ and δ_- for locations of resistance maxima and minima at several HF field amplitudes. (c) The photoresistivity R_xx^ (i)-R_xx^ (i)(E_s=0) at maxima and at minima of j=1 and j=2 against the amplitude of the HF field. (d) R_xx^ (i)/R_xx^ (i)(E_s=0) is shown against E_s^2 on logarithmic scale for j=2,3 and 4.

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mat0307757-fig1.jpg

0.430939

57e5210af39048e3baeea6e5e9a75400

(a) The linear magnetoresistivity R_xx^ (i) induced by background-impurity scattering in a GaAs-based 2DEG subjected to linearly polarized HF fields E_ssin(ω t) of frequency ω/2π=0.1 THz. The system parameters are the same as indicated in Fig. 1. (b) The background impurity-induced photoresistivity R_xx^ (i)-R_xx^ (i)(0) at maxima and at minima of j=1 and j=2 shown in Fig. 2a is plotted against the amplitude of the HF field.

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mat0307757-fig2.jpg

0.462392

404db984c5b743b187c447af2739ae0b

Remote-impurity induced nonlinear longitudinal magnetoresistivity R_xx^ (i) as defined in Eq.(<ref>) in the GaAs-based 2DEG subjected to crossed magnetic fields B and an in-plane linearly polarized HF field E_ssin(ω t) of frequency ω/2π=0.1 THz and amplitude E_s=80 V/cm under several different dc bias velocities v_0=0,.015,.025,.05 and .1 v_F, where v_F=2.4× 10^5 m/s is the electron Fermi velocity. ω_c≡ eB/m is the cyclotron frequency. The other parameters are the same as indicated in Fig. 1.

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mat0307757-fig3.jpg

0.393447

9fecf448ff59438097d8a3f1835c9246

Linear magnetoresistivities R_xx^ (pt) (a) and R_xx^ (pl) (b) induced by transverse and longitudinal acoustic phonons in a GaAs-based 2DES subjected to microwave fields E_ssin(ω t) of frequency ω/2π= 0.1 THz having different amplitudes. The lattice temperature is T=1 K and the electron temperature T_ e=T. The other parameters are: electron density N_ e=3.0× 10^11 cm^-2, dc mobility μ_0(1 K)=2.4× 10^7 cm^2 V^-1 s^-1, and the broadening coefficient α=12.

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mat0307757-fig4.jpg

0.393537

86e9b3c023054396aba1e1eb100e7d09

Nonlinear magnetoresistivities R_xx^ (pt) (a) and R_xx^ (pl) (b) induced by transverse and longitudinal acoustic phonons under different dc bias v_0 in a GaAs-based 2DES exposed to microwave fields E_ssin(ω t) of frequency ω/2π= 0.1 THz having amplitude E_s=170 V/cm and E_s=95 V/cm respectively. Here v_ st= 2.48× 10^3 m/s and v_ sl=5.29× 10^3 m/s are the transverse and longitudinal sound speed. The other parameters are the same as indicated in Fig. 4.

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mat0307757-fig5.jpg

0.467197

ffbaf4bdee914f0b9560a5a2502e5c23

The impurity-induced linear magnetoresistivity R_xx^ (i) (a) and transverse acoustic phonon induced linear magnetoresistivity R_xx^ (pt) of a GaAs-based 2DES subjected to a microwave field of amplitude E_s=80 V/cm and frequency ω/2π= 0.1 THz at elevated electron temperatures. The lattice temperature is T=1 K. The other parameters are the same as indicated in Fig. 4.

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mat0307757-fig6.jpg

0.478051

56f3c72d083c4efc8d23d495f286d7f5

(a) The longitudinal magnetoresistivity R_xx at different lattice temperatures T=1.0,1.5,2.0,2.5,3.0,3.5,4.0 and 4.5 K for a GaAs-based 2DEG subjected to a HF field E_ssin(ω t) of frequency ω/2π=0.1 THz and amplitude E_s=80 V/cm. The system parameters are: electron density N_ e=3.0× 10^11 cm^-2, dc mobility μ_0=2.4× 10^7 cm^2 V^-1 s^-1 at T=1 K, and the broadening coefficient α=12 for all the curves. (b) Zero magnetic field linear mobility induced by transverse acoustic phonon scattering, μ_0^ (pt), by longitudinal acoustic phonon scattering, μ_0^ (pl), and the total mobility μ_0, for the system with μ_0(1 K)=2.4× 10^7cm^2V^-1 s^-1 (dots), and for system with μ_0(1 K)=1.46× 10^7cm^2V^-1 s^-1 (solid line). (c) The amplitudes of the resistivity oscillation R_xx(T)-R_xx(5 K) at maxima and at minima versus temperature T for j=1,2 and 3. (d) R_xx(T)/R_xx(5 K) is shown against 1/T on logarithmic scale for j=2,3 and 4.

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mat0307757-fig7.jpg

0.490064

24a73bb54150432bb86126614f15dc50

The longitudinal magnetoresistivity R_xx at different lattice temperature T=1.0,1.5,2.0,2.5,3.0,3.5,4.0,5.0 and 6.0 K for a GaAs-based 2DEG subjected to a HF field E_ssin(ω t) of frequency ω/2π=0.1 THz and amplitude E_s=70 V/cm. The system parameters are: electron density N_ e=3.0× 10^11 cm^-2, dc mobility μ_0(1 K)=1.46× 10^7 cm^2 V^-1 s^-1, and the broadening coefficient α=7.3 for all the curves. Also shown is the dark resistivity (E_s=0) at T=6.5 K.

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mat0307757-fig8.jpg

0.389772

0fdccde5e093450e81950f2f77d8a59c

Fluorescence microscope pictures for different water contents W; glass bead diameter: 375 μ m 1a) W = 0.055 %, no real bridges have formed yet 1b) W = 0.2 %, capillary bridges between the beads are clearly visible

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mat0307762-figure1.jpg

0.4445

e6df1f8538fe42da92d7c4fe72e85c36

Average number of capillary bridges N in dependence of the water content W

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mat0307762-figure2.jpg

0.509791

6f317a9ce58745728e5fee09aa0d9e86

Distribution of the number of bridges: measured (W = 0.15 %, random loose packing; open symbols) simulated <cit.> (closed symbols)

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mat0307762-figure3.jpg

0.494256

6edd78182f074a619274506a212d4499

Comparison of the measured number of bridges N with random loose and random dense packings to the N which were calculated from the literature values <cit.> according Eq. <ref> Inset: Number of bead contacts for different packing densities.

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mat0307762-figure4.jpg

0.539747

8becf180d4894d6da25240ac5ca944bb

Relative conductance of the domain wall as a function of its width L in a magnetic quantum wire, calculated for indicated values of the parameter p≡ M/ε_F.

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mat0307765-Fig1.jpg

0.485884

801b486391f941e59154e2fff76990de

Comparison of the results obtained from direct numerical calculations (solid line) and and from Eq. (16) valid at k_FL≪ 1 (dotted line) for p=0.7.

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mat0307765-Fig2.jpg

0.407945

56bdebcd8327490181b309d8b83ff57f

Relative spin conductance of the wire with a domain wall calculated as a function of its width L for indicated values of the parameter p.

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mat0307765-Fig3.jpg

0.480419

4bb8a3b55cfc4b02b3baa90bd4b7c7be

Distribution of the spin density of electron gas near a domain wall for different values of p.

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mat0307765-Fig4.jpg

0.437435

e2b0f194a8424a27891cfd00a5a5ba22

Center-of-mass trajectory of a toroidal condensate current κ=1 displaced from the trap center. The torus has parameters λ = √(7), σ = 2 √(ħ/2 m_aω_r) and h_0 = 50 ħω_r and interaction strength C= 1000. The figure shows the path traced out over a total time T=100 in the horizontal plane by the condensate center-of-mass following a small horizontal displacement of the trap axis ε = 1. The combination of the x-dipole and y-dipole oscillations leading to precession of the condensate. These dipoles modes are degenerate and nearly in phase. The spectrum density of the x-dipole oscillations is shown in figure <ref>

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mat0307766-nfig5.jpg

0.460103

c40cef8ad870402facf4223b5faaf405

Center-of-mass trajectory of a toroidal condensate (current κ=1) after radial displacement. As in figure <ref> the torus has parameters λ = √(7), σ = 2 √(ħ/2 m_aω_r) and h_0 = 50 ħω_r, however the atom number is much higher in this case:C= 4300. The figure shows the path traced out over a time T=100 in the horizontal plane by the condensate center-of-mass following a small horizontal displacement of the trap ε = 1. The center of mass performs a circular motion due to two effects: the x and y dipole states are not degenerate in frequency and the amplitudes are out of phase, by roughly ∼π/2.

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mat0307766-nfig6.jpg

0.422739

20a6b75a2b5946da829675d30f11f777

Spectral density of x-dipole of a condensate with circulation κ=1 corresponding to figure <ref>: P_x(ω) The torus parameters are λ = √(7), σ = 2 √(ħ/2 m_aω_r) and h_0 = 50 ħω_r. The condensate interaction strength is C= 1000 with trap displacement ϵ = 1. The figure shows the dominance of three modes, the low frequency m=± 1 doublet, and an excited m=-1 mode. The center of the doublet corresponds to the frequency ω_s= √(2C ⟨ r^-2⟩)≈ 0.58. In the graph the frequency peaks are shifted from the linear response results given in Table <ref> and have a broader splitting than the Bogoliubov approximation. The x-dipole modes, shown above, have frequencies ω_x = 0.421, 0.666, 2.237, 2.441 while the corresponding y-dipole modes have frequencies: ω_y =0.449, 0.657, 2.234, 2.422.

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mat0307766-nfig7.jpg

0.485635

e3a03ab8641a4dae821060ee43d23ec6

Spectral density of x-dipole of condensate with circulation κ=1 corresponding to figure <ref>: P_x(ω) The torus parameters are λ = √(7), σ = 2 √(ħ/2 m_aω_r) and h_0 = 50 ħω_r. The condensate interaction strength is C= 4300 with trap displacement ϵ = 1. The center of the doublet corresponds to the frequency ω_s= √(2C ⟨ϕ^2 r^-2⟩)≈ 0.78 The figure shows the shifting upwards of the mode frequencies and a narrowing of the m=± 1 doublet splitting consistent with an expanded condensate with a higher sound speed. The modes shown above have frequencies: ω_x =0.625, 0.804, 2.095, 2.284. The corresponding y dipole modes, not shown, have similar strengths but with frequencies ω_y = 0.657, 0.792, 2.086, 2.275.

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mat0307766-nfig8.jpg

0.482499

084b746bc2ac4ebba612a96cae66c71a

Experimental and theoretical photoemission spectrum for δ-Pu. The experimental spectrum is given as dots connected with lines (blue), whereas the theoretical spectra is given as a solid line. The inset shows how the experimental spectrum varies with photon energy.

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mat0307767-dpu_fig1.jpg

0.421607

758ed9f430464c34a6fd42bf8e32da58

Heat capacities (in units of k_B) computed with the TT-method estimator as a function of T (in Kelvin) for several values of N. The error bars (two times the standard deviation) are comparable to the thickness of the drawing lines and are not plotted.

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mat0307769-501347JCP1.jpg

0.507541

364bf3221cdb446894821c806b0d9b3b

Classical heat capacities (cTT) and quantum heat capacities by the TT-method estimator (qTT) and the modified TT-method estimator (qmTT) as functions of temperature. On this scale, the curves for the last two quantities overlap. The heat capacities are given in units of k_B, whereas the temperature is given in Kelvin. The number of path variables employed for the quantum results is N = 63. The error bars (two times the standard deviation) are comparable to the thickness of the drawing lines and are not plotted.

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mat0307769-501347JCP2.jpg

0.484775

5d0d9468fda446ae9819a50bc6cc6ca9

Error bars (in units of k_B) for classical heat capacities (cTT) and quantum heat capacities by the TT-method estimator (qTT) and the modified TT-method estimator (qmTT) as functions of T (given in Kelvin). Also plotted (solid line) is the absolute value of the difference Δ_TT = ⟨ C_V ⟩^TT_β - ⟨ C_V ⟩^mTT_β between the heat capacity values computed with the help of the TT-method and modified TT-method estimators.

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mat0307769-501347JCP3.jpg

0.448275

ead2c314a2f149b5894b43420a3efda4

Quantum heat capacities in units of k_B by the TT-method estimator (qTT) and by the TH-method estimator (qTH), respectively. The temperature is given in Kelvin. On this scale, the two curves overlap almost perfectly. The maximum difference between corresponding values on the curves is about 1.5 k_B.

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mat0307769-501347JCP4.jpg