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0.443981
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(color) Neutron scattering intensity, χ”( k,ω), for a state with bond-centered charge order. Parameter values are c=160 meV, λ_1 |ϕ_x| =100 meV, λ_2 |ϕ_x|= 600 meV, λ_3=λ_4=0. s=550 meV is choosen is place the spin sector at its critical point. The panels show fixed energy cuts as function of momentum in the magnetic Brillouin zone. The δ peaks have been replaced by Lorentzians with width Γ = 15 meV, and the responses of horizontal and vertical stripes have been added. The figure can be directly compared to Fig. 2 of Ref. jt04.
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mat0408461-stri11bond4.jpg
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(color) As Fig. <ref>, here for a state with two-dimensional plaquette charge order. Parameters are λ_1 |ϕ_x| =100 meV, λ_2 |ϕ_x| = 600 meV, λ_3=λ_4=0, and s=1.3 eV. The spin order condenses at wavevectors (π±π/4,π±π/4) instead of (π±π/4,π), (π,π±π/4). Furthermore the dispersion features a single energy scale only, i.e., there is no magnetic response above the saddle point at (π,π). (A higher band of spin excitations start around 250 meV.)
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mat0408461-stri11plaq4.jpg
0.465416
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(color) As Fig. <ref>, but now for a state with site-centered charge order, and parameter values are λ_1 |ϕ_x| =200 meV, λ_3 |ϕ_x|= 100 meV, λ_2=λ_4=0, and s=140 meV. Again the responses of horizontally and vertically ordered states have been added.
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mat0408461-stri11site4.jpg
0.4853
2bbb3a5fd067465ea334c928b164fd4c
Simulation for Δ t_exp=14 ms (Δ t_trap on plots) with parameters the same as in Fig. 1(c). To compare with experiment, we plot e^-D_y(x,z), where D_y(x,z) is the optical density along y over the central 22 μm slab of the BEC.
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mat0408464-fig3_082004reduced.jpg
0.439828
181820b1ea2d4483b00ca5ea6c499095
Simulation of soliton VR dynamics during expansion after Δ t_trap=3.0 ms. Times cited are Δ t_exp. Only solitons propagating in -z direction (downward) from the +z (top) defect are shaded (blue through red, in order of creation), to assist in tracking the movement of each from frame to frame. Dots (crosses) indicate vortex cores for z>0 only with positive (negative) circulation with respect to the plane of the page. The vortex colors correspond to parent soliton colors, although the green cores are generated by the mirror image of the correspondingly shaded soliton. Density ranges from 0 to {7.5, 4.5, 4.1, 3.6, 1.3, 0.92, 0.42}×10^13cm^-3 for each of the times presented, respectively. Simulation parameters are the same as in Fig. 1(c).
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mat0408464-fig4_082004reduced.jpg
0.420716
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(A) Illustration of the trigonal distortion of a CoO_6 octahedron. Left panel: undistorted CoO_6 octahedron with cubic (O_h) symmetry. Right panel: compressed CoO_6 octahedron with D_3d symmetry. The distorted CoO_6 is rotated such that the three-fold rotation axis is along the c-axis. (B) Crystal-field splitting of Co 3d states in distorted CoO_6 according to an ionic model and relative energy positions of 3d bands obtained from LDA calculations.
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mat0408467-Fig1_Wu.jpg
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45f726812f04474c9f1b86c40d5ddcd1
O 1s XAS spectrum of Na_0.5CoO_2 measured in the total electron yield mode. The unoccupied bands with which O 2p states hybridize are denoted in the plot.
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mat0408467-Fig2_Wu.jpg
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212f231a72d24c08b06cc7e1238f8f7b
Upper panel: Polarization-dependent O 1s XAS of Na_0.5CoO_2 with the E vector of the light perpendicular (dotted line) and parallel (solid line) to the c-axis. The inset shows the XAS of peak A after removal of background resulting from the tail of peak A' (dashed line). Lower-panel: Energy diagrams illustrating transitions from Ψ_i in the low-spin state to Ψ_f corresponding to the symmetries of peaks A, A' and B labelled in the upper panel. The fully occupied e_g^π states are omitted from the energy diagrams for clarity.
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mat0408467-Fig3_Wu.jpg
0.514447
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Doping-dependent isotropic O 1s XAS of Na_xCoO_2, i.e., (I_∥+I_⊥)/2. The dominant transitions d^6L → d^6 leading to the peaks A and A' are indicated in the figure.
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mat0408467-Fig4_Wu.jpg
0.65323
e0253ac4b4554ef794314ce477e8dc14
Measured and calculated isotropic Co L-edge XAS of Na_0.5CoO_2. Theoretical Co L-edge XAS spectra for LS and HS Co 3d states were broadened with a Gaussian full width of 0.25 eV at half maximum (FWHM) and with a Lorentian FWHM of 0.2 eV. The dotted line is a simulated XAS with the parameters reported in Ref. <cit.>.
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mat0408467-Fig5_Wu.jpg
0.411241
109a4bc718a14f399213b6e99f949e87
Dispersion curves for InSb at 4 kbar stress on the [110] direction (ϵ_xy≈ 2 × 10^-3) and k⃗∥[1 1 0] as measured by Seiler et al <cit.>. The strain splits the conduction and the valence bands. The Dresselhaus k^3 type inversion asymmetry is negligibly small on this scale. No splitting is observed for strain in the [001] direction.
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mat0408476-fig1.jpg
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Vortices with a single columnar pin (heavy vertical line) and parallel magnetic field with displacement field u(x,τ) defined.
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mat0408478-fig1a_new.jpg
0.550795
26674d113e2a47d9964d8b7704b05bbf
topological defect configuration which occurs in the XY model but not in our vortex model. The extra free energy associated with this topological defect pair determines the correlation function of the boson creation operator in Eq. (<ref>).
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mat0408478-fig1b_new.jpg
0.442291
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Renormalization group flows in g and Δ_0 for the random field XY model which describes (1+1)–dimensional vortex arrays subjected to point disorder.<cit.> The Luttinger liquid fixed line at Δ_0 = 0 is is stable to point disorder for g > 1, which is also the regime where a single columnar pin is irrelevant. This line becomes unstable to a new fixed line where point disorder is important for g < 1.
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mat0408478-fig4.jpg
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6861796e74504112bfe903c6dc227e57
Schematic picture of the “traffic jam” scenario, for vortex lines in the vicinity of a columnar pin as described in the text. Because of their mutual repulsion, flux lines queue up in the vicinity of the pin.
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mat0408478-setup.jpg
0.459762
b5985875c22340828d0297df39ed64e8
Hierarchical construction of the checkerboard-type ordering of the hole pairs at “magic" doping fractions (2m+1)/2^n, where m and n are integers. Following the construction of Ref. <cit.>, the original CuO_2 lattice is grouped into non-overlapping plaquettes, which can be represented by the squares on a checkerboard. A checkerboard can be alternately colored black and white; in our case, each black square contains four sites and no holes, while each white square contains four sites and two holes in the form of a Cooper pair. Such a state has hole doping density x=1/4 (a), as represented at the highest level of the hierarchy (e). (Electrons are denoted by black dots, and holes are denoted by open dots; since we only address the issue of charge ordering here, the spin of the electron is not explicitly indicated). At the next level of the hierarchy, consider the lattice of white squares only, and alternately color half of them black. Such a state has hole doping density x=1/8 (b). At one further level down in the hierarchy, one can either consider the lattice of the white squares, and alternately color half of them black, thus obtaining a state with x=1/16 (c), or one can consider the lattice of the newly colored black squares and alternately color half of them white, thus obtaining a state with x=3/16 (d). This hierarchy construction can be obviously iterated ad infinitum, generating a binary tree of magic doping fractions as shown here in (e).
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mat0408483-Fig3.jpg
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Schematic view of the different dynamical regimes appearing in the NPP depending on T and on the typical energy E visited by the system (large values of |E| correspond to deep energies and long times).
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mat0408484-Phasediagram.jpg
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Schematic representation of the phase space structure of the NPP model with single-spin-flip dynamics. The horizon level separates surface states and low energy states. An observable is smooth if it varies slowly between neighboring states.
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mat0408484-smooth.jpg
0.478026
928b25ea95bc4094b68e68c4a8a1db0f
A model silica aerogel showing low-density regions (light) of surrounded by higher density strands and aggregates of silica (dark). The aerogel correlation length, ξ_a≈ 30 nm, is identified with the mean inter-strand distance. The aerogel strand diameter is approximately, δ≃ 3 nm.
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mat0408492-Aerogel_model.jpg
0.439398
3a492e02b96d4d3ca143e46e9e3a5683
The τ^3 decay of the echo signal in a magnetic field gradient for p=0.5 bar. The temperature range is from T=1 to 90 mK. The coefficient, A, determined from the fit at a fixed temperature is related to the spin-diffusion coefficient and field gradient. The inset shows the short time, fast relaxation of unknown origin.
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mat0408492-Echo.jpg
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Comparison to our experimental data.<cit.> We fit the inelastic scattering amplitude to the high-temperature data and obtain good agreement for a mean free path ℓ=130 nm for the entire temperature range.
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mat0408492-GrenobleCompare.jpg
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The total magnetization of in aerogel, both liquid and solid, for several pressures.
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mat0408492-Magnetization.jpg
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The density of solid atoms, normalized by density of liquid for p=0 bar.
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mat0408492-Solid.jpg
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The Curie-Weiss temperature, Θ_ W, as function of pressure. The decrease reflects the increased average density of the solid layer in equilibrium with liquid as the pressure increases.
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mat0408492-Theta.jpg
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Two diagrams: a and b, that give the impurity conductivity in strong magnetic fields
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mat0408494-condmodi1.jpg
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Conductivity change as a function of time after four illuminations for a polycrystalline YH_3-δ sample (structure in inset, following Ref. <cit.>. Open circles indicate Y sites and the striped and solid circles are H atoms at octahedral and tetrahedral sites, respectively). A sharp increase in conductivity follows immediately after the UV light is turned on at t = 0 and relaxation starts after turning off the lamp. Each curve is obtained at T = 4.2 K after resetting the system by raising its temperature above 250 K (where hydrogen vacancies are free to move). The curves overlap, indicating that there is no significant change caused by thermal cycling.
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mat0408495-figure1.jpg
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The relaxation after different illumination times at fixed temperature, T = 4.2 K. All data were taken for δ∼ 0.039 (most insulating hydrogenation). (a) The change in the conductivity, Δσ_relax (t) = σ (t)- σ(0), is greater and faster for longer illumination times. (b) The relaxation becomes logarithmic after a decay time equal to the original illumination time, t_ill. This can be seen by plotting the point designated by the arrows at which log (t) behavior starts, t_onset vs. t_ill (inset). (c) All curves are collapsed onto a universal curve when Δσ_relax (t) is normalized by the conductivity gain from the illumination, Δσ_illum = σ (t=0)-σ_0, where σ_0 is the conductivity before UV exposure and t is normalized by t_ill. The vertical line specifies t/t_ill = 1.
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mat0408495-figure2.jpg
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The relaxation of the YH_3-δ sample with δ∼ 0.062 after 1000 sec illumination at T = 77 K with repetition rates of the pulsed UV lamp from 55 to 225 Hz. Collapse of the curves in the inset proves that it is indeed illumination time t_ill rather than the total number of photons (repetition rate) that is the proper scaling variable.
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mat0408495-figure3.jpg
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The relaxation after 1000 sec illumination at T = 4.2 K for different depths of the Coulomb gap, regulated by hydrogen level. Universal behavior is found using the same scaling form (inset).
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mat0408495-figure4.jpg
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Variation of the relaxation with temperature after 1000 sec illumination. As T decreases, the magnitude of the relaxation also decreases but only weakly, pointing to the many-body nature of the electron glass (see text).
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mat0408495-figure5.jpg
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mat0408496-nnnCompare.jpg
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mat0408496-nnnbondsColor.jpg
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mat0408496-nnnplot.jpg
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The mean fields Δ and ξ versus the hole concentration x in the uniform dRVB state. t/J=3.
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mat0408504-fig1.jpg
0.682873
d8ee3059d318439d892f89e087a7c349
Structure of a honeycomb lattice having the two symmetry translation vectors a_1 = √(3) a_ cc e_x and a_2 = (√(3)/2)a_ cce_x + (3/2)a_ cce_y, where e_x and e_y are unit vectors in the direction of x and y, and a_ cc is the nearest-neighbor bond length. The black (white) circles indicate the A (B) sublattices. Vectors R_a (a = 1,2,3) point to the nearest-neighbor sites of an A-site. They are given by R_1 = a_ cc e_y, R_2 = -(√(3)/2) a_ cc e_x -(1/2) a_ cc e_y and R_3 = (√(3)/2) a_ cce_x - (1/2) a_ cc e_y.
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mat0408505-latt-hopp.jpg
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Due to the finite bias voltage, the electrochemical potential of the right and left lead differ by V. As all electrons in an energy window of width V contribute to low energy properties, it is necessary to take into account that the effective exchange coupling of the electrons depends on their energy. Right panel: frequency dependent effective coupling g() calculated from Eq. (<ref>) for V/T_K=100.
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mat0408506-currentDot.jpg
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Renormalized coupling constants g_⊥() (upper panel) and g_z() (lower panel) for B=100 T_K and V=80 T_K and for different values of the running cut-off D. A symmetric dot with bare couplings g^αα'=g is assumed. Peaks signal that resonant scattering processes take place at those frequencies. The peaks are cutoff by the relaxation rate Γ.
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mat0408506-j12Renorm.jpg
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Power spectral density of the point process, described by the equations (<ref>) and (<ref>). Parameters used are σ=0.01, τ_min=10^-5, and τ_max=1. The dashed line represents the spectral density, calculated according to equation S(f)=1/f.
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mat0408507-fig1.jpg
0.429422
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Distribution density P(x) obtained from the numerical solution of Eq. (<ref>). The dashed line represents the distribution density calculated from Eq. (<ref>). Parameters used are x_min=1, x_max=10^3, n=1, and κ=0.1.
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mat0408507-fig2.jpg
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7f5b203740634ba09246d1f9af6ad3ba
Power spectral density of the signal, obtained from Eq. (<ref>). The dashed line represents the spectral density, calculated according to equation S(f)=1/(2π f). The parameters used are the same as in Fig. <ref>.
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mat0408507-fig3.jpg
0.505119
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Raman intensities for charge monopole final states and polarized geometry: (a) ħω_0=12 meV, (b) ħω_0=3 meV. Two curves are shown corresponding to hν_i=E_gap+5 meV (solid line), and hν_i=E_gap-30 meV (dashed line). This convention is used in the next two figures.
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mat0408510-fig1.jpg
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Raman intensities in different spin and angular momentum channels, and for ħω_0=12 meV.
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mat0408510-fig2.jpg
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Same as in Fig. <ref>, but for ħω_0=3 meV.
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mat0408510-fig3.jpg
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Cumulant ratio 1-U(w)/U(0) vs coupling ratio w=J'/(J+2J') of the field-theoretic model, Eq. (<ref>), in three dimensions for n=1,2,3 (solid, dotted, dashed lines) according to Eqs. (<ref>) - (<ref>).
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mat0408511-u-new-0.jpg
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I_D-V_G curves (closed symbols) of two rubrene FETs on type I Ta_2O_5 (upper panel) and type II Ta_2O_5 (lower panel) (V_D = -10 V in both cases). The open symbols represent the leakage current. The degradation-induced, non-monotonic behavior of the I_D-V_G curve observed for the type I Ta_2O_5 FET is absent in the type II Ta_2O_5 device. Note that the leakage current in the two devices differs by orders of magnitude, despite the comparable crystal surface area (∼mm^2) and Ta_2O_5 thickness (∼ 350 nm). The inset shows that FETs on type II Ta_2O_5 exhibit hysteresis-free electrical characteristics.
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mat0408514-RubreneTa2O5cm.jpg
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Current-voltage characteristics of an organic single-crystal FET, with tetracene as the organic molecule and type I Ta_2O_5 as the gate insulator.
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mat0408514-TetraceneTa2O5charcm.jpg
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(a) Transfer characteristics of a FET on Ta_2O_5 (V_D = -10 V). The source and drain current (I_S and I_D), are equal and opposite, since the leakage current I_leak is orders of magnitude smaller than I_D (see inset). Device degradation is responsible for the non-monotonic I_D-V_G curve, resulting in the full suppression of I_D at high V_G. (b) Transfer characteristics of a tetracene FET on ZrO_2 (V_D = -10 V). The I_D-V_G relation is non-linear and I_D and I_S are lower in the second V_G sweep (open circles) than in the first sweep (closed circles). I_leak (triangles) is much smaller than I_D and I_S. Note that the shape of the I_D-V_G curves is characteristic for ZrO_2 and differs from that of Ta_2O_5. For comparison, (c) shows the transfer characteristics of a tetracene FET on SiO_2 for which I_S and I_D are linearly related to V_G (V_D = -10 V).
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mat0408514-Tetraceneoxidescm.jpg
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Spin-valve device for the measurement of the spin drag effect. A predominantly up-spin current is injected in a non-magnetic (NM) semiconductor via ferromagnetic (FM) electrodes between which a potential difference V is applied. The voltage probes are polarized oppositely to the injectors and therefore measure the down-spin electro-chemical potential.
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mat0408522-Fig1.2.jpg
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The behavior of the electrochemical potentials μ_↑ (dashed lines) and μ_↓ (solid lines) calculated from Eq. (<ref>) for γτ = 0 and γτ =1 and expressed in units of e J W/σ^s in the parallel-electrodes configuration. The semiconductor is in the region -1/2≤x/W≤1/2. The other parameters are p=90%, σ^f/σ^s=10, L^s/W=2, and L^f/W=4. Notice the negative slope of μ_↓(x) at x=0 when γτ=1: such a negative slope is an unmistakable signature of the spin drag.
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mat0408522-Fig2.jpg
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Behavior of the parallel-electrodes magneto-resistance R_parallel(p)-R_c(p) (in units of the ordinary resistance of the semiconductor, R_s) as a function of p for γτ=0, 1, and 2. Notice the sharp enhancement caused by the spin-drag resistivity for values of p close to 100%. As explained in the text, this can be used to determine γτ.
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mat0408522-Fig3.jpg
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The behavior of the electrochemical potentials μ_↑ (dashed lines) and μ_↓ (solid lines) calculated from Eq. (<ref>) for γτ = 0 and γτ =1 and expressed in units of e J W/σ^s in the antiparallel-electrodes configuration. The parameters are the same as in the caption of Fig. 2, namely p=90%, σ^f/σ^s=10, L^s/W=2, and L^f/W=4.
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mat0408522-Fig4.jpg
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Behavior of the antiparallel-electrodes magneto-resistance R_parallel(p)-R_c(p) (in units of the ordinary resistance of the semiconductor, R_s) as a function of p for γτ=0, 1, and 2. The enhancement caused by the spin-drag resistivity for values of p close to 100% is now amplified by a factor (2L^s/W)^2 (= 16 in the present case). As explained in the text, this can be used to mesaure L^s/W once γτ is known.
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mat0408522-Fig5.jpg
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Scaled collision rate Γ_q/β N_F per fermion (in units of ħω_F^2) in a ^40K-^87Rb mixture in isotropic confinement with N_F=10^5, as a function of the impurity concentration N_B/N_F at three values of the temperature T/T_F (symbols). The dashed line shows the classical limit of Eq. (<ref>). The inset shows the collision rate Γ_q/N_F per fermion, in units of ω_F.
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mat0408528-fig1.jpg
0.50765
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Damping rate γ (in units of ω_F) in a ^40K-^87Rb mixture in isotropic confinement with N_F=10^5, as a function of the collisionality Γ_q/N_F ω_F per fermion (cf. Fig. <ref>) and at three values of T (symbols). The dashed line shows the first-order approximation given in Eq. (<ref>).
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mat0408528-fig2.jpg
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Collision rate per fermion (in units of ω_F) as a function of the momentum spread p_0 (in units of the Fermi momentum p_F) for N_F=10^4 ^40K atoms and N_B=100 ^87Rb impurities inside spherical traps.
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mat0408528-fig3.jpg
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Time-averaged ratio ⟨Γ_q/Γ_cl⟩ between the quantum and the classical collision rate at T=0.3 T_F, obtained in the numerical simulation as a function of T_B/T_F (in log scale) for the gas shown in Fig.<ref>.
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mat0408528-fig4.jpg
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Oscillators separately coupled to the bath: eigenfrequencies ν of eq. (<ref>) for a finite model with N+2=10 oscillators versus the system-bath coupling strength γ (in units of mΓ). The critical value γ crit is given by eq. (<ref>). Parameters: ω_a=2, ω_b=5, m=m_a,b=1, D=2 and Δ=1, Γ=NΔ=8.
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mat0408536-EWsepci2.jpg
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Bath-coupling to the center of mass: eigenfrequencies ν of eq. (<ref>) for a finite model with N+2=10 oscillators versus the system-bath coupling strength γ (in units of mΓ). Parameters: ω_a=2, ω_b=5, m=m_a,b=1, D=2 and Δ=1, Γ=NΔ=8.
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mat0408536-EWswpktci2.jpg
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Temperature dependence of ⟨ R^2⟩ (<ref>) for parameter values ω_a=2, ω_b=3ω_a, m_a=m_b=1, D=MΩ_R^2, Γ=10 and γ=5MΩ̃_R^2/Γ, (dark line). For increasing temperature ⟨ R^2⟩ converges to the limit cases ⟨ R^2⟩_ th (grey line) and ⟨ R^2⟩_ cl (dashed line) as given by eq. (<ref>) and (<ref>).
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mat0408536-RRvgl.jpg
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Temperature dependence of the entropy expressions S(ρ_S) and S_p for different values of the system-bath couplings γ (in units of mω_0^2/Γ). Dark lines from bottom to top: S(ρ_S)_γ=0;S(ρ_S)_γ=1;S(ρ_S)_γ=5. Grey lines: S_p,γ=1 (dashed) and S_p,γ=5. Other parameters: ω_0=1, m=1, Γ=10, ħ=1.
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mat0408536-SvNvsSp3.jpg
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Changes in heat δ Q_m (positive) and entropy-term TdS_m (negative) versus bath temperature T for different values of the system-bath coupling γ (in units of mω_0^2/Γ): 0.5 (dashed), 1 (grey), 5 (dark). The oscillator parameters are chosen to be ω_0=1 and m=1. The cutoff-frequency is set to Γ=10 and ħ=1.
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mat0408536-dQmdSmy2.jpg
0.471103
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Phase space volume v versus mass m for different T-values. From bottom to top: T=0; 0.1; 0.2; 0.25. Oscillator potential V(q)=1/2aq^2 with fixed spring constant a=1. Other parameters: γ=1, Γ=500, ħ=1. (See also ref. <cit.>.)
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mat0408536-vnieuwen2.jpg
0.51465
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Phase space volume v versus oscillator mass m for different temperature values. From bottom to top: T=0; 0.25; 0.5; 1. Oscillator potential V(q)=1/2mω_0^2q^2 with frequency ω_0=1. Other parameters: γ=1, Γ=500, ħ=1.
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mat0408536-vrichtig2.jpg
0.484876
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Amplitude |a_12(s_ f)|^2 versus the time-scale τ for s_ i=-1.5, s_ f=1.5 and ω=1. Full oscillating curve: the exact value which can reach unity. Dotted curve: result from a first-order adiabatic perturbation theory. The smooth curve presents a saddle-point approximation (<ref>).
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mat0408537-br1.jpg
0.469929
b8c7ff860d3f43129db4b596ccc75eec
The magnified version of Fig. <ref>: The exact value of |a_12(s_ f)|^2 versus the characteristic time-scale τ for s_ i=-1.5, s_ f=1.5, and ω=1.
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mat0408537-mitridat1.jpg
0.509689
5950a3adbb8847a59af13e955c212977
Calculated density of states for Se II structure from a 25^3 k-point grid at 0GPa (dotted line) and 22GPa (solid line) with ions and unit cell fully relaxed within the spacegroup reported experimentally. The Fermi energy has been shifted to zero, although it lies at a minimum in the density of states, no band gap is present and this structure would result in a metallic material<cit.>.
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mat0408539-SeIIdos.02.22.jpg
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74a6185c231e4e099979a299260a416d
Calculated enthalpy differences between Se II and other phases. The stable structure at is the one with the lowest enthalpy at each pressure. Circles denote Se I, squares Se III and diamonds unmodulated Se IV. Errors are of order the size of the symbols
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mat0408539-enth.jpg
0.47638
172773409d774e99b377b89c43cdab40
Four cells of the modulated body-centered monoclinic cell of Se-IV viewed down the a axis. The dashed line shows the modulation at the experimental value of q=0.28, the calculations were done on cells with this modulation adjusted to q=1/3 and q=1/4 corresponding to a modulation wavelength of 3 and 4 cell respectively. Atoms labelled with 1/2 lie at that fractional coordinate in the c direction, others lie in the plane. (Figure courtesy of M.I.McMahon)
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mat0408539-hannhx.jpg
0.43354
7f7c521b3bb743e7ac3e9ebbd31a5cb2
Spectrum of the state L = 30 with N = 7. The gap Δ = 0.091 g/ℓ^2. Below the gap, we observe two phonon branches along with their multiphonon excitations.
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mat0408540-fig1edge.jpg
0.452898
5873b9b723ab4ee3b850786e133f7876
Orbital occupancy for the Moore-Read (or Pfaffian) state (3-body) and the eigenstate of the 2-body interaction identified as the Pfaffian.
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mat0408540-fig2edge.jpg
0.415186
fad9859878b643bfa3521a22315e2e71
Logarithm of the effective mobility renormalization ln(μ(F)/μ(0)) [Eqs. (<ref>), (<ref>)] with the correlation function g(x)=(1+x^2/ξ_1^2)^-n/2 for strong disorder (V_0/T=5) and large driving forces F. Dotted lines guide the eye with the slope of the intermediate asymptote (<ref>). Thin solid line is the analytic result (<ref>) for n=1.
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mat0408544-large.jpg
0.376839
1b1ccec882f048728588273ed072e6a3
As in Fig. <ref> but for small driving forces F. Thin solid lines indicate the non-linear correction calculated analytically: linear in F for n>1, proportional to F^n for n<1, and Eq. (<ref>) for n=1.
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mat0408544-small.jpg
0.557815
3d366555045749429f1846f8573edb45
Side view of corrugated Ge nanowire structures. In (a), corrugated wire resulting from a structural instability of a (100) cubic diamond nanowire; in (b), a filled-fullerene nanowire. Inner atoms are shown as green spheres.
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mat0408546-fful.jpg
0.535062
84a8a335181e44b6988b594b7965ea51
Cross sections of selected Ge nanowire structures labeled according to the parent bulk phase. In (a) and (b), wires derived from the cubic diamond structure, with axis along (110) direction; in (c), a simple cubic wire; in (d), a β-tin wire with axis along bulk c-direction; in (e) and (f), simple hexagonal wires with axis along bulk c-direction.
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mat0408546-nws.jpg
0.386585
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A uniform step train composed of 30 steps with spacing of l=10 forms step bunches at later times both for (i) f>0,R>1 and (ii) f<0,R<1.
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mat0408548-bchcom.jpg
0.433936
1d8f6ad9df414014b6141b19840e74e0
Plot of concentration profiles according to Eq.(<ref>) with model parameters. R=10 for (i) and (ii), R=0.1 for (iii) and (iv); |fa|=0.01 in all cases.
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mat0408548-chemgrad_exp.jpg
0.428064
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Step evolution when the electric field is at an angle φ=π/4 from the x-axis: (a) t=300, the initial instability induced by the normal component of the field; (b) t=315, the peaks have begun to turn; (c) t=330, all the peaks align with the direction of the field.
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mat0408548-emgm45_com.jpg
0.506114
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Step evolution under a perpendicular electric field (a) At t=160, a linear instability develops; (b) At t=170, asymmetry between the peaks and valleys creates a periodic cellular structure; (c) At t=190, the cellular shape is preserved but it grows in amplitude.
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mat0408548-emgm90m_com.jpg
0.49229
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A study of the asymmetry of the cellular patterns: (a) t=180, a snapshot of the system given by Eq. (<ref>). Note the close agreement with Fig. <ref>(c). This shows that the simplifed Eq. (<ref>) with only terms linear in κ captures most features of Eq. (<ref>); (b) t=180, a snapshot of a model equation where the term ∼∂_τκ is left out of Eq. (<ref>). Clearly this term is mainly responsible for the asymmetric shape in (a).
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mat0408548-emgm90m_comp.jpg
0.469103
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Comparison of the step evolution as the angle φ increases: (a) t=230, φ=π/6; (b) t=330, φ=π/4; (c) t=640, φ=π/3.
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mat0408548-emgm_ang_comp.jpg
0.400877
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Shown is a highly exaggerated profile for a downhill force and slower diffusion in the step region. Also illustrated with the dashed-dot line is the extrapolation of the terrace profile to the center of the step region, thus determining the parameter c̅_t^+ in Eq. (<ref>). The lower part of the figure gives a side view of sharp equilibrium steps and their associated step regions.
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mat0408548-extrapolation.jpg
0.468674
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The upper part of the figure shows a 2D schematic view of the vicinal surface composed of different reconstruction regions on terraces and near steps, separated by dashed lines. In this paper, we assume that the step reconstruction with a fixed width s always follows the motion of the step (solid line). The lower part of the figure shows a corresponding 1D side view that illustrates our coordinate system.
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mat0408548-tworegion_schm.jpg
0.402025
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A uniform step train comprised of 5 steps with spacing l=5 forms in-phase wandering patterns at later times for f>0,R<1. Notice there are some defects in the pattern because the wandering wavelength is incommensurate with the finite size of our system in the y-direction.
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mat0408548-vwanderm.jpg
0.553313
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A geometrical view of a single wandering step region. The dashed arrows inside the step region schematically shows the driven flux that is parallel to the step for a step-down (x direction) field. The lower right corner shows the case when the field is at an angle φ off the x-axis.
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mat0408548-wanderschm.jpg
0.442877
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A schematic plot of the 1D potential surface near an atomic step. Different D's that have dimensions of diffusion constants characterize the hopping rates associated with different barrier heights. Here, we take the width of the step region to be 2a.
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mat0408549-Fig1nonps_generic.jpg
0.481136
036644523f674c84a2465d214b9d92dc
Plot of the dimensionless permeability length d_P/a as a function of R in the symmetric case for a general p_k.
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mat0408549-Fig2p_alpha.jpg
0.486469
6ab1b8913b8048e198c4e6e9b73cc9c7
A schematic illustration of the dimple geometry on the Si(001) surface. (a) The general view of the dimple with the crystallographic directions indicated above. Zooming into a given local area of the dimple (the dotted line box), we show the step-terrace configuration with a general direction of the electric field. φ is the angle between field direction and the local normal to the steps, while θ is the angle between the field and [110]. θ=π/4 corresponds to a field direction along [ 010]. (b) The top view of the dimple when θ=0. Zooming into the dotted-lined box near the center of the dimple with φ=0, we show a top view of the vicinal surface and a side view of the step-terrace configuration. Most of basic physics of step pairing and bunching will be illustrated in this simple 1D geometry with the electric field perpendicular to average step position.
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mat0408549-Fig3schm_dimple2.jpg
0.400779
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A schematic illustration of extrapolation for an effective step region. With a step-down current, domain ( 1× 2) expands to form an effective terrace region with some typical concentration profile c_t. On the other hand, domain ( 2× 1) shrinks to l^' and forms an effective step region when combined with the two step regions bounding it. c_t is extrapolated to the dotted-dashed line at x=0 in the middle of the minor terrace which represents the effective “sharp" step.
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mat0408549-Fig4schm_effregion.jpg
0.583872
c4a71a4348b647f58b0df082db0e9330
(color online) Comparison of the quantum energy per particle, E-E_c for Γ=1 (solid circles), Γ=2 (solid squares) Γ=5, (solid diamonds), Γ=10 (crosses) and Γ=40 (solid triangles) with the second order Wigner-Kirkwood (ħ expansion) correction (corresponding solid or dashed lines).
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mat0408551-fig10.jpg
0.44471
bb4cdde0a2164b07b906e3ecb9168095
g_bin(r) for the Coulomb potential. The upper panel shows the convergence to the classical limit for r several times the de Broglie thermal wavelength, λ_d. The lower panel shows the dependence of g(0) on the temperature. The quantum g(0) is finite, unlike the classical limit.
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mat0408551-fig1_long.jpg
0.476081
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Pair correlation functions g(r) and the corresponding many-body enhancement h(r) are shown as a function of the coupling parameter, Γ, for quantum parameter, η=1. r is in units of the nuclear Bohr radius.
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mat0408551-fig2_long.jpg
0.528874
7a281fae538d49148f2ff61b76fef8d7
The many-body enhancement factor h(0) as a function of Γ and quantum parameter η. Results for the classical OCP, η=0, are from reference <cit.>.
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mat0408551-fig3_long.jpg
0.42457
9736140fb41847519431b8ba15ee5035
Contact probabilities, g(0), versus Γ for indicated r_s showing the transition from thermonuclear (strong temperature dependence, low Γ) to pycnonuclear (temperature independent) regimes.
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mat0408551-fig4.jpg
0.478072
2bcf2bfe25ab4249bb1d05dcc9c82ee0
Intuitive illustration of the relationship between g(0) and the “mixture” free energy for a quantum system and its classical limit. The left panel shows a typical set of discretized (10 steps) paths which would enter the calculation of g(0) for a six particle system. The nodes for the paths of the two “reacting” particles (in center) are shown as open squares. Nodes of the surrounding particle paths are shown as filled circles. Because of the delta function in the definition of g(0) the two paths for the reacting pair overlap at imaginary times t=0 and β. The right panel shows typical paths for the density matrix, integrated to get the free energy, of a five particle mixture where the particle in center (nodes shown as open squares) has a mass and charge equal to the combined mass and charge of the reacting particles in the left panel. In the classical limit, when the de Broglie thermal wavelength goes to zero, the paths for the reacting pair (left panel) or mixture particle (right panel) become straight vertical lines. The potential energy at the reacting pair or mixture particle due to the four neighbors is then the same for both systems implying that g(0) can be derived from the free energy difference.
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mat0408551-fig5.jpg
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Debye-Hückel approximation for h(0) (dashed line) as low Γ limit for the classical, η=0, system. PIMC (solid diamonds) and semiclassical values (dot-dashed line), Eq. 10, for h(0) at η=0.1 are also shown. Hypernetted chain integral equation results (crosses) are from Ref. 18
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mat0408551-fig6.jpg
0.42173
6d5c2c65c86b419c94842587b4980513
g_bin(0) for the screened Coulomb potential at κ =100 (open circles), 10 (open squares), and 1 (open diamonds) compared to pure Coulomb result (thick solid line) and “energy shift” approximation g^κ_bin(0)=e^βκ g^κ=0_bin(0).
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mat0408551-fig7.jpg
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(color online) h(0) for the classical <cit.>, η=0, and quantum, η=1, Yukawa system at Γ=40 as a function of the inverse screening length κ times ion sphere radius a. κ=0 corresponds to the unscreened Coulomb potential results in Fig. 3.
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mat0408551-fig8.jpg
0.456092
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(color online) Comparison of the quantum kinetic, K-K_c (open symbols and dashed lines), and potential energy, V-V_c (solid symbols and lines) per particle (data from Table II).
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mat0408551-fig9.jpg
0.49953
00f40e31ffbc418f852606e0ad2b75d0
The mean success rate ⟨ w ⟩ (dark solid line) as a function of the resource level L for a system with N=1001 agents, s=2 strategies per agent, with memory length (a) m=3 and (b) m=1. For each value of m, data for different values of L are taken in a system with the same initial distribution of strategies among the agents. Also shown are the range corresponding to one standard deviation about ⟨ w ⟩ in the success rates among the N agents (dotted lines) and the spread in the success rates given by the highest and the lowest success rates (thin solid lines) among the agents.
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mat0408557-figure1.jpg
0.537613
eb866f1b840b492897efa459e96e70d0
(a) The history space in B-A-R model with m=3. The nodes correspond to the 2^m possible histories. The transition between nodes are indicated by the arrows, together with the outcome needed for the transitions to occur. The histories can be grouped into columns labelled by a parameter ζ which gives the number of `0' bits in the histories. (b) For the ζ_max=1 states at L ≲ (1- 1/2^s)N, the system follows a path restricted to histories in the ζ=0 and ζ=1 columns, with n loops at the ζ=0 history.
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mat0408557-figure2.jpg