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I just turned 40, retrieval shortly before that. I got 14 eggs, 8 mature, 7 fertilized with ICSI, only one made it to blast and that was at 6 days. Jul 27, 2017 · At the age of 40 many women believe that certain parts of their lives are over and few would even consider becoming an egg donor. For those women who are over 40 and have wanted to become an egg donor their are still options. Egg donation can be an intense and time-consuming experience, but it can fulfil women of all ages. This means that when women over 40 use donor eggs, their chances of success remain largely the same, barring other factors. A woman in her 30s using donor eggs has almost the same likelihood of IVF success as a woman in her 40s who uses donor eggs. Oct 25, 2017 · Chromosomal abnormalities and poor egg quality are no longer a pre-determined diagnosis for women of "advanced maternal age." We know now that there is much to be done to improve how our hormones and ovaries function, and therefore produce healthy eggs, even over the age of 40!
Nov 16, 2015 · One of the more recent innovations in fertility treatments by CHR physicians, early egg retrieval contributed substantially to the success of our center's patients over 40, particularly those over 43. Noticing that eggs of older women tended to be "overmature" at retrieval, CHR physicians ran an experiment where eggs were retrieved earlier, with some eggs fully mature and others still relatively. Page 1 of 2 - Egg retrieval and quality after 40 - posted in IVF Ages 35: Hi all, I was curious to know how many eggs you had retrieved if you did IVF after 40 and how many were PGS normal? In my first and likely only IVF cycle so I want to be realistic. Thanks so much! Women under 35 have the highest success rates in all of the "egg number" groups; Women under 38 in our IVF program have acceptable live birth rates even with only 3 - 6 eggs, do better with more than 6 eggs, and do best with more than 10 eggs. Women 38-40 and 41-42 years old have low live birth rates with low egg numbers. Dec 10, 2014 · And not all the eggs will be good. Among women over 40, about 15 percent of the eggs produced will be normal, Pfeifer said. Many doctors recommend freezing about 20 eggs. May 29, 2017 · At age 40, less than 20% of your eggs are likely to be genetically normal. So women experience a double whammy of fertility decline: as they age, they produce fewer eggs per cycle, and the eggs they do produce are less likely to be genetically normal. That’s why some doctors may impose an egg freezing age limit—if women freeze their eggs later, there’s a higher likelihood those eggs won’t.
Oct 07, 2013 · 42-43 year old, couple of cycles of IVF different protocols, no viable eggs Went to DE with 30 yr donor. 11 eggs retrieved, 8 fertilized, implanted two 3 days = BFN. 2 made it to 6 day blasts and were frozen. Thawed and implanted one month after BFN, resulted in healthy full term twins. No remaining frosties. Jun 10, 2019 · What is Egg Retrieval? Egg Retrieval is a surgical procedure where doctors will extract fluid from mature follicles to retrieve the egg that may be inside. The procedure itself is done within 10-30min and you are put to sleep during the process. What to Expect During IVF Egg Retrieval. Tuesday night, I was instructed to take the Novarel trigger. | http://rogerbradburyphotography.com/egg-retrieval-over-40 |
If you had told me five years ago that part of my art practice would include breeding snails, I would have looked at you like you’d sprouted your very own eyestalks on top of your head. But when you follow a muse, she leads you down crazy paths...and you never know what will kick off the journey.
In the case of my giant snail drawing in the Arvada Center’s current Paper.Works show, that journey started on a biodynamic farm in the Catskill Mountains called the Straight Out of the Ground Farm, run by an amazing woman named Madalyn Warren. I’d been selected to spend time there as part of the Andes Sprouts Society residency, which she also ran. Initially, I went there to work on a project with fireflies, but I had the wrong technology with me for an area so far from the city, and my sparse programming skills and lack of preparation didn’t help. One afternoon, sitting on the porch and picking snails off of the tiny garden in front of it, I put a snail on the black cover of my sketchbook and was transfixed as a gossamer, iridescent thread stretched behind the snail's gooey body. Who knew snail slime was so beautiful? It glistened and created rainbows in the sun, even when dry.
When I returned to Denver, I couldn’t get the mark that snails left out of my head. I had previously been collaborating with bees to make artworks, but an allergy to their stings had left me without a natural collaborator. Snails seemed a good alternative, but where would I get snails in the high, dry desert of Colorado?
Thinking that everything could be shipped, I began my hunt. But it turns out, snails are illegal to ship, since they are an invasive species. Complaining on Facebook led me to a friend who had five pet snails in a tank, taken from someone’s garden. As her daughter had largely lost interest, I took possession of a small tank with purple sand and got a crash course in caring for snails. In the heat of the summer, they simply adhered themselves to the glass and hibernated, a thin membrane of hardened slime keeping in some moisture. I sprayed them constantly, but still lost a couple to age...and three snails weren’t enough to do a drawing with. And any breeding attempts to create more proved less than successful.
I still managed to start working with them, slowly...trying to figure out how to preserve their trails through sprays and coatings, but each attempt failed to preserve the luminescent shine of their slime. In fact, I found that most attempts at preservation simply caused the trails to disappear. Even handling the paper would cause the delicate layer of snail slime to flake away and vanish.
At a certain point, I realized that the best way to preserve the contours of their travels was to cut away everything around the trails...which left me partially erasing it with the movement of my hand. But the poesis of this felt like a metaphor to me: When can we touch anything in nature without creating a human footprint? How do we preserve things without also erasing what they are? How could I make the invisible visible?
As I worked on these “drawings,” painstakingly cutting the matte areas away around the shiny dried snail slime, I kept feeling that I needed to go larger...but paper is sold in pre-set sizes. Then Collin Parson asked me to create a site-specific work for the Arvada Center’s paper show. He showed me the problematic curved wall at the entrance to the space, always a challenge for the staff to install work on, and asked if I thought I could make something to fill that 26-foot-long wall. I said “yes” before I thought through how to do it, excited for the opportunity. All I really knew was that I needed to get a big roll of paper...but could I find bigger snails?
Each snail in this process makes a different line, mostly according to its size. The average size of my “paintbrushes” ranges from quarter-inch-long babies (they don’t leave much of a line at that size) to one-inch-long adults. The perfect partner for this task would have been the Giant African Land Snail. Coming in at about seven inches, its trail would have made a magnificent mark much thicker than the lines I had been cutting out.
However, Giant African Land Snails are considered an invasive species, and for good reason: Needing a steady supply of calcium to feed growth of their shells, they have a habit of eating stucco off of buildings and also devastating agricultural crops. So in the areas where they have begun to appear in the United States, usually sneaking in via shipments from far-off lands, they are rounded up and destroyed — Florida kills around 200,000 a year. Needless to say, shipping any to Colorado would be illegal.
So I started calling university entomology departments, in a desperate search to find some I could maybe “borrow” by traveling to wherever they were. Even that didn’t yield much, and the clock was ticking:
With only a few months to complete this mammoth project, I needed either a lot more snails or bigger ones...what else could work?
If nothing else, I needed to increase the number of snails I had, but so far, most breeding efforts had ended in the snails eating their own eggs: I'd only managed to create a crew of twenty snails, divided between two ten-gallon tanks. I wondered if more space might help.
A few days of diligent Craigslist searching rewarded me with a 55-gallon former python home. After I'd layered some dirt and moss inside and created a habitat, on the very first day I knew it was the right choice. Snails have a lot of sex and go at it for twelve hours or so.... My new habitat was a 24/7 gastropod bordello. Within a week, clutches of shiny white eggs began to appear underneath the dirt, and within a month, 150 tiny snails dotted the glass. But they weren’t going to grow fast enough for this project, I feared.
Google turned up an option I hadn’t considered: banana slugs, which are six inches long at adulthood and plentiful in the Pacific Northwest. I found a scientific supply house that sold them — but it didn’t have any in stock, and it would be spring before its slug-hunters could replenish the supply. I checked back weekly, anxiously, until the supply house could finally ship me four banana slugs.
Finally, FedEx delivered a box with a plastic container filled with four listless slugs on an ice-pack, who got a little more lively after they rehydrated and acclimated to their new environment. However, all this waiting yielded nothing but disappointment — not only did the slugs’ sticky slime fail to adhere to the paper, but boringly, they only went in a straight line! It’s ordinarily hard to see the slime trail when I’m working, but the slugs merely dampened the paper, making it almost impossible to see. I would just have to work with the twenty original snails.
It was time to get to work. With two 4’ x 8’ tables placed side by side, I could accommodate the eight-foot width of the roll of black paper, but the majority of it needed to stay rolled as I worked in eight-foot sections. This meant I would not see the completed piece until it was unrolled and put on the wall at the Arvada Center. Placing the snails on the table, I was able to cover six feet with their curious ramblings each evening. My rules were simple: I was only allowed to move them when they’d reached an edge, though it was important to plan their placement carefully to connect with the previous work.
The snails, of course, were the fast part of this process: The rest was laborious and careful, requiring patient cutting with an Xacto blade around the contours of their squishy trails. So every day, I would place a large cutting mat under a section, bend back-breakingly over the table, and cut. And cut. And cut. Hours would pass unnoticed, as I entered a flow state and meditated on the disappearing trails...and the disappearing nature in our world. Every day, my goal was to roll at least two feet of a section, carefully pulling the paper taut and winding it up, exposing more terrain for the snails to explore.
After months of this careful and painstaking work, I still couldn’t imagine what it would look like on the wall. Arvada Center master installer (and my longtime friend) Dave Seiler had visited the studio to devise a strategy with me, and painted dozens of tiny nimodium magnets flat black. When I arrived at the gallery with my long roll of paper, it took four of us to carefully unwind it across the curved wall and secure it with nails at the top.
I confess: Seeing it unrolled was incredibly moving. I was surprised at the variation of lines from different sessions, even though I had attempted to be as methodical as possible. From that point, I simply finessed the push and pull from the wall to make sure it was stable and to maximize the impact of the shadows cast by the work. We embedded nails in the wall, then used the tiny magnets to hold the paper in place.
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You might think that I'd be done with snails after all those hours of snail-watching and 24 feet of painstaking cutting. But if anything, seeing the possibilities of large-scale work with such tiny creatures has only spurred me on, and I’m still putting my friends on black paper and tracing the contours of their journeys with the sharp point of my knife.
Now all of those babies are teenagers, making their own graceful, sticky paths. They seem as excited to explore as I am.
See Paper.Works at the Arvada Center for the Arts and Humanities, 6901 Wadsworth Boulevard in Arvada, through Sunday, August 20. The gallery is open from 9 a.m. to 7:30 p.m. Monday through Friday, 10 a.m. to 7:30 p.m. Saturday, and 1 to 5 p.m. Sunday. Find out more at arvadacenter.org. | https://www.westword.com/arts/paperworks-at-arvada-center-includes-art-created-at-a-snails-pace-9280356 |
You and your team have crash-landed on the island of an eccentric antique collector in Unlock! The Island of Doctor Goorse. Two to six players must split into teams, separated in the crash, and are forced to escape from two separate starting points. With your lines of communication cut, can you and your teammates find a way off the island?
Unlock! is a series of escape adventures for up to six players. With one hour on the clock, players work through a deck of sixty cards as a team, searching for clues, combining objects, and solving puzzles.
Difficulty level: 3/3
Contents:
1 Rulebook
1 Tutorial (10 Cards)
60 Cards
Ages: 10+
Players: 1-6
Game Length: 60 minutes
Unlock! requires a free app to play. An internet connection is not required during game play. | https://shop.kohii.my/product/unlock-the-island-of-doctor-goorse/ |
Abstract: Considered were four dairy farms. Two were certified organic farms and two were conventional - one with intensive and one with extensive production system. Observations were conducted on 10 Holstein-Friesian (HF) cows from each farm while from conventional farm with extensive production additional 10 Polish Red (PR) cows were observed. Samples of milk and hair for determination of minerals were collected in September. Hair samples were taken from the poll. Twenty-nine elements - Ca, K, Mg, Na, P, S, B, Ba, Co, Cr, Cu, Fe, Ge, I, Li, Mn, Mo, Ni, Se, Si, Sn, Sr, V, Zn, Al, As, Cd, Hg, and Pb - were determined in milk and hair. The concentrations of Ca, Mg and P in milk were highest in intensive production system with no grazing, compared with conventional and both ecological farms with pasture feeding. The highest concentrations of 1, Mn, Sr, V, and Zn in milk were found on conventional intensively producing farm, while those of Li, Si, Sn, Ba, and Ge on both organic farms. The highest concentrations of B, Be, Co, Fe, Ge, and Li in cow hair were found on organic farm, and highest concentration of Cr, 1, Mo, Se, So, Sr, V, and Zn on conventional farm with extensive production. The highest levels of Cd and Ph in milk were found on conventional farm with extensive production. Generally, the levels of all toxic elements in milk appeared low and below admissible. The results presented suggest that the mineral composition of cow milk and hair depended on production system followed on the farm.
Reference: Gabryszuk, M., Sloniewski, K., and Sakowski, T. (2008). Macro- and microelements in milk and hair of cows from conventional vs. organic farms. Animal Science Papers and Reports 26(3), 199-209. | https://www.organicag.org/production-practices-and-mineral-content-cow-milk |
The Cambridge dictionary defines integrated HR as the process of combining all the systems that helps in managing and using human resources in a business so they work effectively together for the best results.
Pay roll is defined as the list of the company employees stating what their company designations are, along with the amount to be paid to them, in the form of salaries and other incentives.
In the modern work culture, human outsourcing and payroll management go hand in hand. This is where integration of human resources and the payroll system takes place.
Why Payroll System?
If the business have one or more associate employees, it is necessary to define a payroll system within the company. Many companies use human resources or leasing companies or try to use automated payroll services and software to manage these with utmost precision and privacy.
There are many factors that define the payroll systems. These include:
1. Time and wages:
A payroll system keeps in track of the amount you have to pay to the employees through the number of hours that they have worked, the amount of wages that they are supposed to get per hour and keeping in track of the amount of holidays and leaves that they have taken during the paid time. This also improves the employees’ motivation and also encourages the employee to do more.
2. Taxes and withholding:
While maintaining a company within a booming industry, there are certain rules and regulations that should be followed by the head of the company. These rules and regulations are set by the state and the federal department of the respective countries.
One of the most basic rules is the timely payment of taxes and other fees by the company to the government of that country.
A payroll system calculates how much the company owes to the government in the form of taxes and how to comply with such regulations. This system can automatically deduce the amount that you are obliged to pay the taxing authorities. It also does wage deductions and wage cut offs.
3. Reporting:
The main purpose of managing payroll systems is the management of one of the most expensive resources of a company – its labour. Labour is the most expensive and highly maintained part of the organization.
A payroll system generates a list of monthly, hourly and weekly employees. It also categorizes the employees on the basis of the type of work they do.
For example whether if they are leased or original employees of the company. Also, they provide ease to the mangers in checking the number of employees absent and present within a present day, the amount of salary earned by an employee and the highest and the lowest earner within the employee pool.
Pros and Cons of an Integrated HR and Payroll System:
Pros of an Integrated HR and Payroll System:
1. Reduction of paperwork:
Most of the documents needed are common for both the human resource department and the payroll system. The best advantage of integrating the human resources with the payroll system is that the amount of papers required for filing the information is very much reduced.
This is because most of the payroll systems used are highly automated in nature and do not require much printing and physical storage. They are usually stored as digital data and is stored in the payroll system database within the company.
2. Updation:
In addition to reduction of paperwork, automated payroll systems also does a great job in automatic updation about the employees. Since most of the documents involved for both the human resource department and the payroll department are the same, they require the same database for future referencing.
The database includes employee information, the wages and other personal details of the employee. When the database administrator enters a relevant information into the database, the payroll system automatically updates and computes the payroll relevant to the information obtained.
For example, if a company has terminated an employee, and they have to update the details, all they have to do is, remove and delete the employee details in the database and the payroll system automatically does the same in regards of the payroll information about the employee. This can be a great time saver and also helps in reducing errors up to a great margin.
3. Specialized reports:
Most of the companies require details about the employees and other related information for consolidated packages. This report contains not only the employees’ name and payroll scale but also other personal information.
This cannot be materialized and fabricated without the help of the human resource department and accessing the payroll system and the employee databases. Hence, highly confidential information can also be accessed by the companies through such databases.
4. Time:
One of the basic advantages of integrating both these factors, is that all the details can be easily entered by a single person. This defeats all the errors formed when the same information had to be entered by two different individuals at different departments. This results in more simplified data entry tasks.
5. Consolidation:
An added benefit of integrating database is consolidating both the information from the human resource department and the payroll system. This makes it easier for the employees to access about their information and also provide security so that no other third person can tamper with the given information.
If you could authorize the employees themselves to update and view their details, it could reduce the data entry and administration efforts by up to 80%.
6. Accuracy:
Having more employees and other personnel interfere and access with the database information can bring errors in the information knowingly and unknowingly.
For example, the human resource employees accidentally entered the wrong database information, this can cause problems not only for both the divisions but also across all department where these information is relevant and important.
By unifying the data entry process and also assigning a few employees for data entry, a large number of errors can be reduced. This can be applicable for data entry purposes for multiple departments.
7. Gauging employee performance:
An integrated system enables you to create a more satisfied and more designed work for various factors such as creating an efficient employee training and orientation programme.
This can also act as an added feature of comparing the performance of a working individual, with respect to others in an organization. Analyzing such data can lead to new employment approaches and recruitment practices.
8. Freeing administrative time and focus:
The human resource staff and employees will be the first to note how much time and energy your employees are spending on a new task or project. This type of low level activity employs a new employee process basically streamlining a new training approach for the employees or introducing a new HR system.
With the payroll and human resource integration the human resource can enter any type of data, from staff reviews and suggestions to the necessary information regarding payrolls and tax information and mandatory payroll forms.
These are all integrated into the system as a single entity. This prevents expanding valuable resources and capital in collecting various information from different areas at different times and tedious inputting of employee data.
9. Detection of profit leakages:
Payroll can easily be out of control, if not managed carefully. It leads to severe losses for the company and for the associated clients. The human resource departments can check into the payroll database and detect for any susceptible profit leakages. Such payroll leakages can be disastrous and can incur losses to the companies irrespective of the size of the company.
The best method to solve such a problem is the integration of the finance department and the human resource department of the company. Both the sides should work hand in hand so as to prevent such losses knowingly and unknowingly. The three main reasons that can incur liabilities are:
1. Reducing the associated paperwork.
2. Reducing the company exposure for safety purposes.
3. Improving the efficiency and the morale of the company.
To reduce the dependency of payroll systems, the best method is to use interfaced human resources and payroll systems. That is, using multiple outsourcing companies for a single client company.
This can provide motivation and encourage a healthy competition between the two leasing companies and the client company will get the ultimate authority and power and it can be used to exercise authority over both the groups.
Cons of an Integrated HR and Payroll System:
Certain decisions are to be taken when deciding whether integration of the human resource department and the payroll system is the best option for you.
1. Lack of synergy:
While maintaining a small business, it is important to maintain a certain level of synergy within the different organizations and along with other companies. This level of synergy is expected for both the human resource department and the payroll systems.
Each department has their own set of rules and protocols that the employees are comfortable with. Combining different levels of rules and protocols while integrating different areas can be confusing for the employees and can decrease the productivity of that certain branch.
2. High cost:
Integrating different branches may save you a lot of money in the long term, but it can be highly expensive when in used for short terms. Also, such integrations requires a lot of resources and if your company does not have the sufficient financial stability, this can provide loss for the company.
Moreover, problems arising from the leased and the native employees such as lack of communication, unmatched skills in both the department and insufficient training for both the departments can lead to a huge loss in capital and resources. This can also lead to a failure in delivering the results as expected by the company.
3. Difference in priorities:
Each department has their own set of priorities. It can be disastrous when different department do not follow those priorities and hence provide inefficient services.
This can also create unsatisfactory customers, such as delay in providing customer feedbacks and delay in issuing paycheck for the employees and so on. This can create further misunderstanding between the two departments.
4. Misunderstanding:
The more workers you have in a company, the more there are chances of communication and more will be the cases of misunderstandings and poor communication. Certain companies may treat integration as a chance of future layoffs, hence decreasing the employee morale and productivity.
Once integrated with a different department, many problems will arise due to poor communication, difference in priorities, disagreement or personal opinions. These differences both in the professional and at personal level will provide many difficulties to the company in the future, such as slowing down the company’s productivity and agility. This can also create a bad name for the company.
Finding The Right Payroll Service:
Every company is different from one another each have their own set of values and motives. No company is 100% identical to one another. Similarly, there is no single payroll software that is truly satisfactory for one particular type of Client Company. The real success lies in how much efficient the software is. This can be done by finding out the right software for the company.
Try to discuss with different vendors and other system administrators and try to tailor out a payroll system which is suitable to your needs and fancies as an employer or the company head.
Another method that can be used to provide for efficient results is interfacing different outsourcing and leasing agencies into a single company. This type of method is not usually used that often because of the high price, the expenditure formed and also it is made to ensure that the company that is hiring both these agencies should be financially stable. If so, such methods can do wonders for the development of the company.
This method provides a specific solution to the specific needs of the human resource department of the company. So, it becomes easier for the company to pin point out the various problems that may arise during outsourcing employees. It can also enable the departments to move forward independently and in par with the development of the organization. | https://content.wisestep.com/top-pros-cons-integrated-hr-payroll-system/ |
The publication detailing the results of both the Pilot and Validation Studies are now available online. The Phase II Validation Study dataset is available here.
hERG kinetic data and other channels IC50 data for the training compounds were generated by both manual and automated patch clamp systems. These data were used for model optimization and metric selection, as detailed in several manuscripts. This version of model and metric were frozen and their performance are to be evaluated using independent validation compounds, the data of which are being collected through both manual and automated systems. Continued optimization of the model/metric after the validation stage is also planned.
Protocols were developed and manual experimental work was completed. The High-Throughput Systems (HTS) studies to evaluate and characterize the automated patch clamp systems is underway. The training compounds have been completed for both manual and automated systems and data analysis initiated. The second phase of the HTS study with the validation compounds is underway. Additional ion channel studies will likely be planned beyond 2017 to further validate the model.
J-Tpeak was selected as an additional biomarker and the automated algorithm to assess for this marker was published as open-source code (see Data Resources.) A clinical trial was initiated to produce additional ECG data, which is nearly complete and data analysis will commence shortl. | https://cipaproject.org/timelines/ |
Artículos con la etiqueta "Mona McCall"
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Music
· 01/25/2018
TruCountry: Mona McCall performs "Once A Day".on 2018.
Once a Day" is a song written by Bill Anderson and recorded as the debut single by American country artist Connie Smith. It was produced by Bob Ferguson for her self-titled debut album. The song was released in August 1964, topping the Billboard country music chart for eight weeks between late 1964 and early 1965. It was the first debut single by a female country artist to reach number one. This song peaked at number one on the Billboard Hot Country Singles chart for the week of November 28,
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Music
· 11/15/2017
Mona McCall - Bayou My Baby
Mona McCall sings Bayou My Baby on TruCountry Music Show 2017. She is the wife of Darrell McCall, is a traditional country singer, has several CDs under the label of Heart Of Texas. Mona is also part of the band of Darrell McCall, where he contributes with guitar and voice.
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Q:
T-SQL: How to selectively filter out duplicates from temp table
I have a result set in a temp table that is the result of some complicated joins and need to know the best way to filter rows that have the same duplicate AccountId/HealthPlanId (shown below).
select * from #HealthPlans
And the contents are as follows:
AccountId MemberId HealthPlanId RankNo
101273 47570 5215 1
101273 47570 2187 2
101273 55551 5179 3
160026 48102 5620 1
160026 48446 5620 2
In this scenario RankNo, which is not a value computed by my original query, is a db column that ranks member/healthPlan where there is more than one member/healthPlan combination on a given account.
In the case of account 101273, I have the same member (47570) with 3 separate health plans (5215, 2187, 5179). That's fine. I want to rank the health plans.
However, for accountId 160026, I have healthPlanId: 5620 listed twice but with different memberId's. I need to keep either of these member id's and discard the other (it doesn't matter which I keep since I'm only interested in Ranking the HealthPlanId).
Basically, an account should only have a row for each unique health plan. However, duplicate memberId's is OK and should be ranked as long as the HealthPlanId differs.
In other words, select rows from #HealthPlans such that the following is the result set:
There's no need to show the original joins because this is basically a simplification of my original issue.
Thanks,
Sean
A:
Another method using a window function:
DECLARE @tab TABLE (AccountId int, MemberId int, HealthPlanId int, RankNo int)
INSERT @tab VALUES
SELECT *
FROM(
SELECT ROW_NUMBER() OVER(PARTITION BY t.AccountId, t.HealthPlanId ORDER BY t.RankNo) rn, t.*
FROM @tab t
) t2
WHERE t2.rn = 1
Your particular query might look like:
SELECT *
FROM(
SELECT ROW_NUMBER() OVER(PARTITION BY hp.AccountId, hp.HealthPlanId ORDER BY hp.RankNo) rn, hp.*
FROM #HealthPlans hp
) hp2
WHERE hp2.rn = 1
| |
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11
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492
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2583
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4
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9
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73
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52
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2326
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4
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81
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259
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1554
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100
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2788
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4
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332
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650
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53
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84
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13
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7
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286
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348
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949
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4
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675
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3490
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4
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701
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63
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91
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6
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454
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1067
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945
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28
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224
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7
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9
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862
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7
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405
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13
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5
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7
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3959
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215
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3
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94
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121
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7
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3551
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471
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17
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4
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1761
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1143
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630
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6
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129
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6
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2124
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330
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125
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78
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84
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2179
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66
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249
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5
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3910
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4
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8
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5072
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54
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845
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1301
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14
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6
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1583
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67
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9
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1326
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20
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3620
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13
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468
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1504
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16
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148
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24
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6
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3720
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13
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725
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277
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6
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14
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196
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30
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16
What is
| |
Q:
If statement doesn't stop execution. C programming
I'm very new to this, and i'm trying to create a text based minesweeper.
I want the player to decide how big he want the grid to be.
My problem is, that the if-statement, that should make sure, the user types in a number from 1 to 10 doesn't work. Please have a look.
scanf ("%i/%i",&x,&y);
if (0 < x < 11 && 0 < y < 11)
{
printf ("you have selected %i by %i\n",x,y);
for (i = 0; i < x; i++)
{
for (j = 0; j < y; j++)
{
grid[x][y] = 'O';
printf ("%c ", grid[x][y]);
}
printf ("\n");
}
}
else
printf ("Wrong gridsize");
A:
C does not support double comparisons like:
0 < x < 11
you should write instead
0 < x && x < 11.
It may be misleading, because the first statement is syntaxically correct (it compiles), but it does not do what you may believe: check both boundaries like in a mathematical expression (what python does for instance).
It's like if you had written
(0 < x) < 11
The first binary expression returns a boolean (well, really an int in C, a boolean in C++). This boolean once casted to int is 0 or 1, always below 11, henceforth the expression is always true.
Of course the same is true for checking y boundaries. Now you should be able to fix the problem by yourself.
| |
The Kennedy girls soccer team narrowly edged out Linn-Mar 1-0 after a late goal at Linn-Mar Stadium on Thursday.
Kennedy, ranked No. 6 in Class 3A, ran its record 7-1 overall and 6-1 in the Mississippi Valley Conference. No. 10 Linn-Mar fell to 4-4, 4-4.
The game was the third annual Breast Cancer Awareness game between the schools with both teams wearing pink and the proceeds from ticket sales went to breast cancer awareness.
“It’s a good way for the girls to identify and start the volunteering that they need to learn to support the local community,” said Linn-Mar Coach Steve Dickinson. “They get up for it and they really enjoy it. It is good because the two groups play club together, they see each other every day.”
The fact that the two teams know each other so well added to the atmosphere and hyped both teams up.
“It’s a rivalry with Linn-Mar,” Kennedy's Katherine Helmlinger said. "We lost to them last year and we didn’t want to lose again. A lot of the girls on the team we play with for club, so we didn’t want to lose.”
The hype and excitement of the game seemed to get the best of the Cougars in the first half, as the Lions dominated possession and put heavy pressure on the Kennedy goal.
“We hit the crossbar, and we hit a couple other items,” Dickinson said. “That is just sometimes the luck of soccer, just that slight difference.”
One of those “other items” that the ball bounced off of was the gloves of Kennedy keeper Allie Hutcheson who came up big, keeping the Cougars in the game through the first half by keeping the furious Linn-Mar attack out of the goal.
“It was basically not letting them have any,” Hutcheson said. “When it is 0-0, you always got to make sure that they aren't the first ones to score because that puts a lot more pressure on. Just having that mentality of, ‘They don’t get one,’ is really important.”
In the second half, the play evened out significantly, with Kennedy even gaining a little bit of an upper hand in terms of possession and chances. The Cougars finally broke the scoreless tie in the 73rd minute when Claire Hellweg played a through ball to Helmlinger.
“I just saw the ball go through and I wanted to beat the keeper to it, stay composed and not rush the shot and it went in,” Helmlinger said.
The goal put the Lions back on the attack as they pushed to try to tie the game back up. Their best chance to tie the the game came with 27 seconds left when Lindsey Harms found herself in front of the goal with space to shoot. She fired a nice shot at the post but Hutcheson came up big yet again with a diving one handed save.
“It was a little scary,” she said. “I didn’t quite know where it was going, but I stretched out and got it and hoped my team was there to pick it up and they were.”
Kennedy plays at Class 2A No. 1 Xavier Friday (May 6) at 4:15 p.m.
Kennedy 1, Linn-Mar 0
Goal -- Kennedy: Katherine Helmlinger (73rd min). Assist -- Kennedy: Claire Hellweg. | http://metrosportsreport.com/index.php?option=com_content&view=article&id=2268:cougars-top-lions-but-breat-cancer-awareness-wins&catid=184:about-msr |
“Mapleine Dainties” recipe booklet
Check out these recipes images:
“Mapleine Dainties” recipe booklet
Image by litlnemo
By the design and illustrations I am going to guess this was printed in the 1930s.
Eggplant_Polpette
Image by skilletsandpots
Eggplant_Polpette
recipe development
Check out these recipes images:
recipe development
Image by planningqueen
Cassoulet
Image by olvado
Sriracha Wings
Image by ManiacalV
Chocolate Chip Cookies (Recipe)
A few nice recipes images I found:
Chocolate Chip Cookies (Recipe)
Image by Ruthieki
I’m a little famous for these cookies around these parts. A batch rarely lasts more than 24 hours, and my roommates can be seen scouting around the kitchen days later, muttering something that sounds like "any of those cookies left?"
I wrote about chocolate chip cookies a while ago for Gapers Block, so I’ll just excerpt the recipe and important bits here:
What makes a great chocolate chip cookie? In my opinion, there are several important factors. First, texture: The perfect chocolate chip cookie should be crisp around the edges, but chewy in the center, even days after baking. Greasy, floppy, or cement-like textures are undesirable. Secondly, form: I prefer a cookie that’s about as big around as a can of soup, and thick enough to really bite into. I consider those dinner-plate-sized cookies I’ve seen at various coffee-shops to be an abomination, but tiny little bite-sized Chips Ahoy are no more appealing. Lastly, taste: Chocolate chip cookies are a classic and should not be fooled with, taste-wise. However, tiny variations from the standard recipe on the back of the bag of chocolate-chips can really take a cookie from tasty to transcendental.
Chocolate Chip Cookies
1/2 cup rolled oats, ground to a fine powder in a blender
2 1/4 cups flour
1 1/2 tsp baking powder
1 tsp salt
1/4 tsp cinnamon
1 cup butter (2 sticks), at room temperature (resist the urge to microwave)
3/4 cup sugar
3/4 cup brown sugar
1 1/2 tsp vanilla extract (preferably authentic)
1/2 tsp lemon juice
2 eggs
3 cups or one standard package of semi-sweet chocolate chips (I like Nestle brand chips)
1. Grind the oats in a blender or food processor.
2. Measure the flour, baking powder, salt and cinnamon into the blender jar (or food processor) and pulse to thoroughly combine all the dry ingredients.
3. Cream together the butter and both sugars. Add eggs, lemon juice, and vanilla, stirring well after each addition.
4. Combine the dry ingredients with the wet stuff, and mix until fully combined.
5. Add chocolate chips and stir by hand to evenly incorporate the chocolate.
6. Refrigerate the dough for an hour or overnight.
7. Drop the dough by large spoonfuls onto an ungreased cookie sheet. Leave plenty of room for the cookies to spread as they cook.
8. Bake at 350° F for approximately 16 minutes, or until barely golden and still slightly raw. You’ll have to do this in batches, so keep the extra dough in the fridge while the first batch is baking, and make sure the pan is completely cool before you spoon on the next round of dough.
9. Cool the cookies on the pan for five minutes, then transfer to a rack to cool completely before packing the finished cookies into an air-tight jar or sealed zipper baggies.
Taking the cookies out of the oven at the right moment and not overbaking them is the first key to producing soft, chewy cookies. You can tell that the cookies are ready to come out of the oven when the edges are golden and the tops are just barely beginning to show signs of turning brown. The cookies will still appear somewhat raw at this stage, and will fall to pieces if you try to pick one up — that’s perfect. As they cool, the centers will firm up, and the cookies will be deliciously soft in the middle. If you take the cookies out of the oven when they really look done, they end up overdone and hard as little rocks.
I tried a lot of recipes before settling on this one. I sampled batch after batch with slightly different proportions of butter and flour. I even made cookies using shortening instead of butter. Each cookie was analyzed and thoroughly criticized before being consumed. This recipe is the best I’ve ever had. The road to cookie heaven is littered with diet resolutions and empty milk cartons. It was a difficult journey, but I persevered. These particular cookies have made me famous amongst select friends, family and roommates. I hope you enjoy them too.
Quiche Pot Pie
Image by jshontz
Find the recipe at jointhekitchen.com
Blue Hawaii Recipe
Image by Justin Ornellas
China Walls, Portlock, Hawaii Kai, Oahu
Holga 120n
Fuji Color 120 Medium Format Film 100 ISO
Mai Tai Recipe
Some cool recipes images:
Mai Tai Recipe
Image by bekkalekk
chocolate profiterole recipe
Some cool recipes images:
chocolate profiterole recipe
Image by Catherine Ford MALAGA
Chocolate profiteroles with an orange cream and chocoalte sauce. | http://popularcookingbooks.com/tag/recipe |
The Etobicoke-Mississauga Coin, Stamp and Collectibles Club [“EMCSCC”] is a not-for-profit collectors organization, which was established in 1964 as the Thistletown Coin Club. In the 90s the club merged with the Port Credit Coin Club and took on our current name.
While the club promotes collecting as a hobby and an educational pursuit, we have structured the club to be social as well as for hobbyists.
EMCSCC is a member of the provincial hobby association the Ontario Numismatic Association and has members who belong to a host of other collecting associations.
Typically, there are about 25 people that attend our monthly meetings. | http://gta-collects.ca/About-EMCSCC.php |
This work presents a model that attempts to measure the political polarization of Reddit submissions during the first half of Donald Trump’s presidency by quantifying those who align themselves with pro-Trump ideologies and vice versa.
Social Media, Political Polarization, and Political Disinformation: A Review of the Scientific Literature
- Geology
- 2018
The following report is intended to provide an overview of the current state of the literature on the relationship between social media; political polarization; and political “disinformation,” a term…
The Language of Extremism on Social Media: An Examination of Posts, Comments, and Themes on Reddit
- SociologyFrontiers in Political Science
- 2022
Digital media give the public a voice to discuss or share their thoughts about political and social events. However, these discussions can often include language that contributes to creating toxic or…
Online polarization and cross-fertilization in multi-cleavage societies: the case of Spain
- Political ScienceSoc. Netw. Anal. Min.
- 2022
The impact of the social media (SM) has been seen on the one hand as the cause of large exacerbation of negative messages, responsible for massively harmful societal phenomenon against democracies.…
Over-Time Trends in Incivility on Social Media: Evidence From Political, Non-Political, and Mixed Sub-Reddits Over Eleven Years
- SociologyFrontiers in Political Science
- 2021
Incivility in social media has become a major concern of the public, who perceive uncivil online interactions to be both widespread and increasing. This study provides a descriptive account of…
Measuring the prevalence of online hate speech , with an application to the 2016 U . S . election
- Computer Science
- 2018
An application of a new framework for measuring the prevalence of online hate speech over time demonstrates that hate speech and white nationalist language did not systematically increase on Twitter over the course of the 2016 U.S. election campaign or following Trump’s election.
Deny or bolster? A comparative study of crisis communication strategies between Trump and Cuomo in COVID-19
- Political SciencePublic Relations Review
- 2022
No echo in the chambers of political interactions on Reddit
- SociologyScientific reports
- 2021
It is observed that Trump vs Clinton supporters have a preference for cross-cutting political interactions between the two communities rather than within-group interactions, thus contradicting the echo chamber narrative.
Roots of Trumpism: Homophily and Social Feedbackin Donald Trump Support on Reddit
- Computer ScienceWebSci
- 2020
Evidence is found that the most prominent traits of a typical supporter of Donald Trump on Reddit include a predominance of masculine interests, a conservative and libertarian political leaning, and links with politically incorrect and conspiratorial content.
Group Salience, Inflammatory Rhetoric, and the Persistence of Hate Against Religious Minorities
- Law
- 2021
Hate crimes surged at several points during and after the 2016 U.S. presidential election. Observers argued that hate crimes, especially against Muslims, increased due to inflammatory rhetoric. Did…
References
SHOWING 1-10 OF 29 REFERENCES
Understanding White Polarization in the 2016 Vote for President: The Sobering Role of Racism and Sexism
- Education
- 2018
THE 2016 PRESIDENTIAL CAMPAIGN FEATURED major-party candidateswho both explicitly put issues of race and gender at the forefront of the discourse. Notably, 2016 also witnessed the largest gap between…
Measuring Offensive Speech in Online Political Discourse
- SociologyFOCI @ USENIX Security Symposium
- 2017
Preliminary results from a large-scale temporal measurement aimed at quantifying offensiveness in online political discussions are presented, using a database of over 168M Reddit comments made by over 7M pseudonyms between January 2015 and January 2017.
Affect, Not Ideology A Social Identity Perspective on Polarization
- Political Science
- 2012
The current debate over the extent of polarization in the American mass public focuses on the extent to which partisans’ policy preferences have moved. Whereas "maximalists" claim that partisans’…
Negative partisanship is real, measurable, and affects political behaviour
- Political Science
- 2014
Many people explain their political involvement with reference to the kinds of outcomes they’d like to avoid, with Republicans and Democrats alike often framing their campaigns around ‘keeping out’…
Is Polarization a Myth? | https://www.semanticscholar.org/paper/Online-Political-Discourse-in-the-Trump-Era-Nithyanand-Schaffner/c79fa22655876ee7b2bd8eef0b3a2c028673686c |
The deep sea, or deep layer, is the lowest layer in the ocean, existing below the thermocline and above the seabed, at a depth of 1000 fathoms (1800 m) or more. Little or no light penetrates this part of the ocean and most of the organisms that live there rely for subsistence on falling organic matter produced in the photic zone. For this reason scientists once assumed that life would be sparse in the deep ocean but virtually every probe has revealed that, on the contrary, life is abundant in the deep ocean.
From the time of Pliny until the expedition in the ship Challenger between 1872 and 1876 to prove Pliny wrong; its deep-sea dredges and trawls brought up living things from all depths that could be reached. Yet even in the twentieth century scientists continued to imagine that life at great depth was insubstantial, or somehow inconsequential. The eternal dark, the almost inconceivable pressure, and the extreme cold that exist below one thousand meters were, they thought, so forbidding as to have all but extinguished life. The reverse is in fact true....(Below 200 meters) lies the largest habitat on earth.
In 1960 the Bathyscaphe Trieste descended to the bottom of the Mariana Trench near Guam, at 35,798 feet or 6.77 miles (10,911 meters), the deepest spot in any ocean. If Mount Everest were submerged there, its peak would be more than a mile beneath the surface. At this great depth a small flounder-like fish was seen moving away from the bathyscaphe's spotlight. The Trieste was retired and for a while the Japanese remote-operated vehicle (ROV) Kaikō was the only vessel capable of reaching this depth. It was lost at sea in 2003. In May and June 2009, the hybrid-ROV (HROV) Nereus returned to the Challenger Deep for a series of three dives to depths exceeding 10900 meters.
It has been suggested that more is known about the Moon than the deepest parts of the ocean. Until the late 1970s little was known about the extent of life on the deep ocean floor but the discovery of thriving colonies of shrimps and other organisms around hydrothermal vents changed that. Before the discovery of the undersea vents, it had been accepted that almost all life on earth obtained its energy (one way or another) from the sun. The new discoveries revealed groups of creatures that obtained nutrients and energy directly from thermal sources and chemical reactions associated with changes to mineral deposits. These organisms thrive in completely lightless and anaerobic environments, in highly saline water that may reach 300 °F (150 °C), drawing their sustenance from hydrogen sulfide, which is highly toxic to almost all terrestrial life. The revolutionary discovery that life can exist under these extreme conditions changed opinions about the chances of there being life elsewhere in the universe. Scientists now speculate that Europa, one of Jupiter's moons, may be able to support life beneath its icy surface, where there is evidence of a global ocean of liquid water.
Read more about Deep Sea: Biology, Exploration
Other articles related to "deep sea, sea, deep":
... ADEPD is the acronym for Atlantic Data Base for Exchange Processes at the Deep Sea Floor (MAS3-CT97-0126) which was a marine research project funded by the EU from 1998 to 2000 ... Karin Lochte at the Leibniz Institute for Baltic Sea Research, Warnemünde with contributions of ten European partners and one institute from the US ... Aim of the ADEPD project was to build up a joint data base for deep sea biological and geochemical data from a variety of sources and to conduct a preliminary geographical analysis of these data ...
... a higher trophic level are exploited in the sea than on land ... Environmental change in the sea has a much lower frequency than on land, both temporally and spatially ... The standing stock of grazers is higher than that of primary producers in the sea, the reverse of the situation on land ...
... The deep sea is an environment completely unfriendly to humankind, and it should come as no surprise that it represents one of the least explored areas on ... exploration methods, demanding alternative approaches for deep sea research ... increases at approximately one atmosphere for every 10 meters meaning that some areas of the deep sea can reach pressures of above 1,000 atmospheres ...
... also called offshore fish or neritic fish, are fish that inhabit the sea between the shoreline and the edge of the continental shelf ... Deep sea communities – Deep sea communities currently remain largely unexplored, due the technological and logististical challenges and expense involved in visiting these remote biomes ... Deep sea creature – The term deep sea creature refers to organisms that live below the photic zone of the ocean ...
... Marine life forms Census of Marine Life Coastal fish Coral reef fish Deep sea communities Deep sea creature Deep sea fish Deep-water coral Demersal fish Marine ...
Famous quotes containing the words sea and/or deep: | https://www.primidi.com/deep_sea |
Hi, Currently we have a DURATION defined as DURATION( Number rate ; Number currentValue ; Number desiredValue ) This probably because OOo for some legacy reason had implemented it for compatibility with whatever application. However, OOo also defines DURATION_ADD( Number Settlement ; Number Maturity ; Number Coupon ; Number Yield ; Number Frequency [ ; Integer Basis = 0 ] ) which btw is also used to compute MDURATION. Gnumeric has DURATION with those 5+1 parameters and additionally has a function G_DURATION with 3 parameters same as OOo's DURATION. I propose to rename the spec's current DURATION to LEGACY.DURATION and add DURATION with 5 parameters. Does anyone have a mathematical formula for DURATION offhand? Eike -- Automatic string conversions considered dangerous. They are the GOTO statements of spreadsheets. --Robert Weir on the OpenDocument formula subcommittee's list. | https://lists.oasis-open.org/archives/office-formula/200703/msg00064.html |
Students will demonstrate their knowledge of US geography through a creative story.
Introduction(5 minutes)
- Show students the book The Scrambled States of America.
- Have students discuss with a partner what they think this book will be about and what type of genre they think it is. Have students use specifics to back up their thoughts.
- Have several students share out their responses with the class.
Explicit Instruction/Teacher modeling(15 minutes)
- Read The Scrambled States of AmericaTo students.
- Ask guiding comprehension questions as you read, such as, Why was Kansas so lonely?
- Your questions should get students thinking about the unique characteristics of the different states.
Guided practise(5 minutes)
- Explain that students will be writing their own story about a time that the state they live in switched places with another state.
- In order to do this, they will have to think about the Climate, or average temperature and weather conditions, of their state compared to other states. They will also need to think of the varying Landforms, or way the land is shaped, across different states.
- Show students the example story attached or come up with one of your own!
Independent working time(20 minutes)
- Hand out the The Day My State Switched Places! story worksheet.
- Give students ample time to write their stories.
Differentiation
- Enrichment: Have students write a story about two states in the same region, which will present more of a challenge. These students could also write about a time when three states switched places.
- Support:Have students draw a Venn diagram graphic organizer to first determine similarities and differences between the two states. This will allow students to organise their thoughts before starting the story.
Assessment(5 minutes)
- Read the students' stories to determine their understanding of the climate and landforms of each state.
Review and closing(10 minutes)
- Have students get into small groups and share their stories.
- Have students share some of the humorous details they heard in their classmates' stories with the whole group! | https://nz.education.com/lesson-plan/switching-us-states/ |
SAN MARCOS — The city of San Marcos Community Services is currently accepting applications for its 14th annual Talent Competition. The competition will take place at 6 p.m. May 9 at the San Marcos Community Center, 3 Civic Center Drive. The deadline to enter is April 27.
Many types of talent are being accepted and all ages are welcome to compete in this on-stage talent search. Winners will be showcased in future special events offered by San Marcos Community Services. Special trophies and cash prizes will be presented in four categories: dance, vocal, instrumental and novelty. There are four age divisions: 5 to 12 years old; 13 to 18 years old; 19 to 39 years old; and 40 and up. Entry fees are $12 per solo act, $8 per person for duo/trio and $6 per person for line numbers.
Applications are available at the San Marcos Community Center, online, or by calling (760) 744-9000.
The Coast News has been delivering high-quality news, community voice and storytelling since its inception in 1987. Since then, the news organization has grown into a successful newsgroup covering a majority of San Diego’s populous North County region. | https://www.thecoastnews.com/applications-being-accepted-for-talent-competition/ |
Corn dip! Is corn dip a thing? Have you ever had it? I’m from the South and we pretty much turn anything into a dip down there, but I can’t remember if I’ve ever had a corn dip!
I got this idea into my head a few weeks ago when I was thinking about how much corn we are going to have in a couple of months in our garden. Then, when I bought pickled jalapeños for my Grilled Ginger-Scallion Chicken Burger Platter, I realized that was the missing ingredient from the recipe I’d written in my head. You can use fresh jalapenos and a splash of vinegar (check out the notes section below for more on this), but jarred, pickled jalapeños really make this dip SO DELICIOUS. The vinegary, spicy bite of pickled jalapeño provides such an awesome contrast to the creamy dip. So good!
I made this with frozen corn but I cannot wait to recreate in a month or so with fresh summer corn!
Jalapeño-Corn Dip
Ingredients
- 2 tsp olive oil
- 3 green onions, minced, plus more for garnish
- 2 garlic cloves
- 2 cup corn (fresh or frozen)
- 1 cup (8 ounces) cream cheese
- 1 cup sharp cheddar cheese
- 3 tbsp pickled jalapeños, minced, plus more slices for garnish
- ¼ tsp kosher salt
- ¼ tsp smoked paprika
- Optional: crumbled cotija or feta cheese, for garnish
Instructions
- Warm oil in an 8 or 10-inch skillet over medium- high heat. Cook the green onions and garlic for 30 to 45 seconds. Stir in the corn and cook until crisp-tender, 2 to 3 minutes.
- Reduce heat to medium-low. Stir in the cream cheese, cheddar cheese, pickled jalapeños, salt, and paprika until melted into a smooth dip.
- Smooth the top of the dip and garnish with pickled jalapeños, green onions, and cotija or feta if desired.
Substitutions
- Green onion—> 1/4 cup of ANY minced onion.
- Garlic—> 1/2 teaspoon garlic powder (add it when you add the salt).
- Cream cheese—> I used vegan cream cheese because I randomly had it. That kept this dip healthier. If I hadn’t used a vegan cream cheese, I would have used 1/2 cup cream cheese and 1/2 cup Greek yogurt. You could also use 1/2 cup sour cream, 1/2 cup cream cheese. Or, like is listed in the recipe, just use 8 ounces of normal cream cheese. Just stick to about 1 cup total of “creamy” substance”.
- Cheddar cheese—> mozzarella, 1/2 cup Parmesan, pepperjack, gouda, so many options here. Anything melty.
- Pickled jalapeño—> saute 1/2 minced jalapeno in with the green onions and garlic. Add a splash of any light colored vinegar to the dip when you add the cheeses.
- Smoked paprika—> this is SO good in here. But if you can’t find it, add some garlic or onion powder just for more flavor. | https://www.carolinechambers.com/recipes/vegetarian/10-minute-jalapeno-corn-dip |
Gene expression is generally regulated by multiple transcription factors (TFs). Despite previous findings of individual TFs regulating pancreatic α-amylase gene expression, the combinatorial transcriptional regulation is not fully understood. To gain insight into multiple TF regulation for pancreatic α-amylase gene, we employed a function conservation approach to predict interacting TFs regulating pancreatic α-amylase gene for 3 dietary animal groups. To this end, we have identified 77, 25, and 118 interacting TFs for herbivore, omnivore, and carnivore, respectively. Computational modeling of TF regulatory networks demonstrated that known pancreas-specific TFs (e.g. GR, NFAT, and PR) may play important roles in recruiting non pancreas-specific TFs to the TF-TF interaction networks, offering specificity and flexibility for controlling pancreatic α-amylase gene expression in different dietary animal groups. The findings from this study indicate that combinatorial transcriptional regulation could be a critical component controlling pancreatic α-amylase gene expression.
This article was published in the following journal.
Name: Genomics
ISSN: 1089-8646
Pages:
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A stochastic model for post-transcriptional regulation of rare events in gene expression.
Post-transcriptional regulation of gene expression is often a critical component of cellular processes involved in cell-fate decisions. Correspondingly, considerable efforts have focused on modeling p...
Emerging roles of lncRNAs in the post-transcriptional regulation in cancer.
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Transcriptional regulation of the genes involved in protein metabolism and processing in Saccharomyces cerevisiae.
Topological analysis of large networks, which focus on a specific biological process or on related biological processes, where functional coherence exists among the interacting members, may provide a ...
Deep Sequencing of the Breast Cancer Transcriptome
This project is a pilot study designed to investigate transcriptional regulation in breast cancer. Although the main focus of the present study will be triple negative breast cancer where ...
Assesment of Salivary Alpha-amylase Levels Before and After Ovulation
Investigators aimed to investigate whether there is an association between ovulation and salivatory alpha amylase (sAA) activity in menstrual cycles during a month period in a group of rep...
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The Effect of Liraglutide on Pancreatic Hormones and Its Size
Glucagon-like peptide-1 (GLP-1) is a gastrointestinal hormone used to treat type 2 diabetes and severe overweight (Liraglutide).The two pancreas enzymes: amylase and lipase are slightly el...
Epigenetic Features of FoxP3 in Children With Cow's Milk Allergy
Epigenetic mechanisms have been implicated in the pathogenesis of food allergy. The investigators previously demonstrated that tolerance acquisition in children with Immunoglobulin E- (IgE...
Regulatory Elements, Transcriptional
Nucleotide sequences of a gene that are involved in the regulation of GENETIC TRANSCRIPTION.
Rna, Long Noncoding
A class of untranslated RNA molecules that are typically greater than 200 nucleotides in length and do not code for proteins. Members of this class have been found to play roles in transcriptional regulation, post-transcriptional processing, CHROMATIN REMODELING, and in the epigenetic control of chromatin.
Hmga1a Protein
An 11-kDa AT-hook motif-containing (AT-HOOK MOTIFS) protein that binds to the minor grove of AT-rich regions of DNA. It is the full-length product of the alternatively-spliced HMGA1 gene and may function as an architectural chromatin binding protein that is involved in transcriptional regulation.
Gene Silencing
Interruption or suppression of the expression of a gene at transcriptional or translational levels.
Hmga1b Protein
An AT-hook motif-containing protein (AT-HOOK MOTIFS) that binds to the minor grove of AT-rich regions of DNA. It is a truncated form of HMGA1a protein that is produced by alternative-splicing of the HMGA1 gene. It may function as an architectural chromatin binding protein that is involved in transcriptional regulation.
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Bioinformatics
Bioinformatics is the application of computer software and hardware to the management of biological data to create useful information. Computers are used to gather, store, analyze and integrate biological and genetic information which can then be applied... | https://www.bioportfolio.com/resources/pmarticle/2340333/Insight-into-the-combinatorial-transcriptional-regulation-on-amylase-gene-in-animal-groups.html |
Messier 81 is the nearest large spiral galaxy outside the Local Group and gives its name to the M81 group of galaxies and is 3.7 megaparsecs away from us. It is roughly half the size of the Milky Way and has roughly half the number of globular clusters, perhaps 125 compared with the 200 or so in our galaxy. At that distance the globular clusters look like faint stars and careful image processing is needed to make them easily visible. Large professional telescopes are needed to distinguish them from foreground stars in our galaxy. Julie B. Nantais and John P. Huchra published Spectroscopy of M81 Globular Clusters in 2010 which included a catalogue of the positions and magnitudes of 107 globular clusters in M81. This catalogue was used to locate the globular clusters marked on the images below.
As in our galaxy, the globular clusters around M81 are generally found far away from the galactic core, though perspective can make them appear to be close in. The core is bright and the clusters are faint, so the contast stretching needed to make them visible results in the body of the galaxy being severely over exposed (though this can be overcome to some extent as will be seen later). It is markedly easier to see small faint objects in a negative image, where the stars and clusters are black against a white sky. In this first image 49 globular clusters are marked out of a total of 107 in the catalogue. The missing ones are either too faint to be picked up, lost in the background glare from the galaxy itself, obscured by brighter stars and emission nebulae (H-II regions), or out of the field of view. The brightest is magnitude 17.53 and the faintest 20.90.
After creating that image I realised that if the light from the galaxy could be removed there might be a chance of seeing some more globular clusters. Accordingly another image was created by blurring the original with a 25-pixel radius median filter. That smoothed image was subtracted from the original, thereby removing almost all of the gently varying intensity, leaving only the fine details. The somewhat bizarre looking result appears below. Stars are clearly visible, as are the lines of H-II regions which delineate the spiral arms. Crucially the globular clusters are still visible, including a fair number which were previously hidden. The newcomers are circled in red. The two in yellow are the pair which were closest to the center of the galaxy which could be seen in the top image. | http://astropalma.com/Projects/Deep_sky/M81_gc.html |
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abstract: |
We present HST/ACS images and color-magnitude diagrams for 25 nearby galaxies with radial velocities $V_{LG}< 500$ km s$^{-1}$. Distances are determined based on the luminosities of stars at the tip of the red giant branch that range from 2 Mpc to 12 Mpc. Two of the galaxies, NGC 4163 and IC 4662, are found to be the nearest known representatives of blue compact dwarf (BCD) objects.
Using high-quality data on distances and radial velocities of 110 nearby field galaxies, we derive their mean Hubble ratio to be 68 km s$^{-1}$ Mpc$^{-1}$ with standard deviation of 15 km s$^{-1}$ Mpc$^{-1}$. Peculiar velocities of most of the galaxies, $V_{pec} = V_{LG} - 68 D$, follow a Gaussian distribution with $\sigma_v = 63$ km s$^{-1}$, but with a tail towards high negative values. Our data displays the known correlation between peculiar velocity and galaxy elevation above the Local Supercluster plane. The small observed fraction of galaxies with high peculiar velocities, $V_{pec} < -500$ km s$^{-1}$, may be understood as objects associated with nearby groups (Coma I, Eridanus) outside the Local volume.
author:
- 'Igor D. Karachentsev'
- Andrew Dolphin
- 'R. Brent Tully'
- 'Margarita Sharina, Lidia Makarova and Dmitry Makarov'
- Valentina Karachentseva
- Shoko Sakai
- 'Edward J. Shaya'
title: ACS imaging of 25 galaxies in nearby groups and in the field
---
Introduction
============
Until 2000, very little data have been available to describe the peculiar velocity field of galaxies around the Local Group. This surprising situation was caused by the lack of reliable data on distances (not velocities) for many of the nearest galaxies. The Local Group itself is in the highly nonlinear collapse regime. In a larger volume, deviations from pure Hubble expansion can be expected due to the gravitational action of nearby groups as well as by Virgo-centric and Great Attractor flows. Enormous progress has been made recently with accurate distance measurements of nearby galaxies beyond the Local Group based on the luminosity of the tip of the red giant branch (TRGB). This method (Lee et al. 1993) has a precision comparable to the Cepheid method (Sakai et al. 1996, Ferrarese et al. 2000, Sakai et al. 2004), but requires much less observing time. Over the last few years, WFPC2 snapshot surveys have made use of the TRGB method to obtain 10% distances for about 100 galaxies. Further significant progress is expected because the Advanced Camera for Surveys (ACS) probes about 1.5 mag deeper in an equal integration time and acquires a field double in area.
Apart from 36 members of the Local Group, there are, so far, 310 galaxies with distance estimates less than 7 Mpc. Among these, distances to 174 galaxies have been measured with an accuracy of 10% based on the Cepheid method (N=12), or the luminosity of the TRGB (N=162). A list of these galaxies is presented in “Catalog of Neighboring Galaxies” (CNG) by Karachentsev et al. (2004). The remaining galaxies have only rough distance estimates from the luminosity of their brightest stars, the Tully-Fisher relation, or from their membership in the known nearby groups. In this restricted distance range the TRGB method is most effective because it provides accurate distances to galaxies of all morphologies with minimal observational demands. The superior angular resolution of HST has been a critical factor: 95% of the TRGB distances have been obtained with HST during the last four years. The remaining 136 galaxies are suitable targets for a SNAP survey with the Advanced Camera at HST.
The radial velocity – distance relation for nearby galaxies is shown in Figure 1. Within 7 Mpc there are two substantial groups of galaxies: around M 81 and Cen A. The average distances of 3.7 Mpc, and 3.8 Mpc, respectively, are very similar. Members of these two groups are shown in Figure 1 as open circles. The solid line corresponds to the Hubble relation with $H_0 = 68$ km s$^{-1}$ Mpc$^{-1}$, curved at small distances because of the decelerating gravitational action of the Local Group (Lynden-Bell 1981, Sandage 1986) assuming a total mass of $1.3\times
10^{12} M_{\sun}$. The largest deviations from the Hubble regression are seen to be related to the virial motions of galaxies inside the M81 and Cen A groups. An “S –wave” feature brackets the distance regime of the two dominant groups: nearer galaxies have velocities that exceed the Hubble flow and more distant galaxies have lower velocities. This pattern is the signature of infall toward massive attractors.
Karachentsev & Makarov (1996, 2001) found that the local expansion on a scale of 5 Mpc is significantly anisotropic, described by the tensor $H_{ij}$ with values (81$\pm$3) : (62$\pm$3) : (48$\pm$5) in km s$^{-1}$. The minor axis of the ellipsoid is directed towards the pole of the Local Supercluster, and the major axis has an angle of (29$\pm5)\degr$ with respect to the direction of the Virgo Cluster (shifted towards the Great Attractor position). Later, Karachentsev et al. (2003) have used TRGB distances derived with WFPC2 data to confirm the local velocity anisotropy. Some galaxies in Figure 1 (like UGC 3755) that lie well below the Hubble line are all found at high supergalactic latitudes. Given the observed concentration of nearby galaxies to the Supergalactic equatorial plane, the retardation from Hubble flow seen in the high latitude galaxies is expected. It follows naturally from numerical action models of large scale flows (Shaya, Peebles, & Tully 1995) where mass is assumed to be distributed like the light of all the known galaxies (in a census that extends to the Great Attractor).
The accurate distances that have already been obtained with the HST snap surveys provide tremendous new constraints for numerical action modeling. It is to be appreciated that peculiar motions are best constrained locally. A 10% error at a Hubble distance of 300 km s$^{-1}$ translates to an uncertainty in peculiar velocity of only 30 km s$^{-1}$ but the error increases linearly with distance. Every accurate distance provides an additional constraint on the local distribution of matter. The widest possible coverage of the sky is desired.
According to the results of N-body simulations (Governato et al. 1997, Massio et al. 2005) the dispersion in the motions of field galaxies and group centers around the mean flow, $\sigma_v$, contains information on galaxy formation, the density of matter, $\Omega_m$, and the relative importance of Dark Energy, $\Omega_{\lambda}$. Early hints of a cold local Hubble flow ( Sandage et al. 1972, Tully 1982) have been confirmed by the results of HST TRGB programs (Karachentsev et al. 2003c). Galaxies within 3 Mpc of the Local Group yield a surprisingly low dispersion, $\sigma_v$ about 25 – 30 km s$^{-1}$, and the dispersion of the centroids of the nearest groups (Local, M 81, IC 342, Scl, Centaurus A, M 83, Canes Venatici I groups) is $\sim$25 km s$^{-1}$. Quiescence of the local Hubble flow is a signature of a vacuum-dominated universe (Chernin 2001, Baryshev et al. 2001). Cosmological simulations based on the Cold Dark Matter (CDM) paradigm but without Dark Energy inevitably produce models with local random motions that are too high. Maccio et al. (2005) show that CDM models with Dark Energy can result in low random motions in the density regime of the local neighborhood. The earlier in history the transition from the dominance of attraction to the dominance of repulsion, the lower the random motions expected today due to the enhanced effect of adiabatic cooling with expansion.
HST ACS photometry
===================
Our sample consists of 25 galaxies observed with the Advanced Camera for Surveys (ACS) as part of an HST Cycle 12 snapshot project (\#9771). We obtained 1200s F606W and 900s F814W images of each galaxy using ACS/WFC with a CR-split of two. The cosmic ray cleaned images (CRJ data sets) were obtained from the STScI archive, having been processed according to the standard ACS pipeline.
Stellar photometry was obtained using the ACS module of DOLPHOT (Dolphin et al. in prep), using the recommended recipe and parameters. In brief, this involves the following steps. First, pixels that are flagged as bad or saturated in the data quality images were marked in the data images. Second, pixel area maps were applied to restore the correct count rates. Finally, the photometry was run.
In order to be reported, a star had to be recovered with S/N of at least five in both filters, be relatively clean of bad pixels (such that the DOLPHOT flags are zero) in both filters, and pass our goodness of fit criteria ($\chi \le 2.5$ and $\vert sharp \vert \le 0.3$).
To estimate our photometric uncertainties and completeness, artificial star tests were run on the KK230 and NGC247 fields, which represent the most and least crowded images. Completeness plots are shown in Figure 2. We note that the plateau at $\sim 85$% completeness is due to bad pixels and cosmic rays. We also show the magnitude errors as a function of recovered magnitude in Figure 3.
CTE corrections were made according to ACS ISR03-09, and our zero points and transformations were made according to Sirianni et al. (2005). We estimate the uncertainties in the calibration to be 0.05 to 0.10 magnitudes.
We determined the TRGB using a Gaussian-smoothed $I$-band luminosity function for red stars with colors $V-I$ within $\pm0\fm5$ of the mean $\langle V-I \rangle$ expected for red giant branch stars. Following Sakai et al. (1996), we applied a Sobel edge-detection filter. The position of the TRGB was identified with the peak in the filter response function. According to Da Costa & Armandroff (1990), for metal-poor systems the TRGB is located at $M_I = -4.05$ mag. Ferrarese et al. (2000) calibrated the zero point of the TRGB from galaxies with Cepheid distances and estimated $M_I = -4\fm06 \pm0\fm07(random)\pm0.13(systematic)$. A new TRGB calibration, $M_I = -4\fm04 \pm0\fm12$, was made by Bellazzini et al.(2001) based on photometry and on a distance estimate from a detached eclipsing binary in the Galactic globular cluster $ \omega$ Centauri. For this paper (as for our previuos works with the HST data) we use $M_I = -4\fm05$.
TRGB distances and integrated properties
========================================
ACS images of 25 observed galaxies are shown in Figure 4. The compass in each field indicates the North and East directions. Usually our target galaxies were centered on the middle of the ACS field, but for two large targets (NGC 247, NGC 4605) the ACS position was shifted towards the galaxy periphery to decrease a stellar crowding effect. In Figure 5 $I$ versus $(V-I)$ color magnitude diagrams (CMDs) for the 25 galaxies are presented.
A summary of the resulting distance moduli for the observed galaxies is given in Table 1. Its columns contain: (1) galaxy name, (2) equatorial coordinates, (3) radial velocity in km s$^{-1}$ in the Local Group (LG) rest frame with the apex parameters from NASA Extragalactic Database (NED), (4) position of the TRGB in apparent I-band magnitude, (5) the total number of detected stars per image, (6) Galactic extinction in the I-band from Schlegel et al. (1998), (7) true distance modulus in mag, and (8) linear distance in Mpc. Taking into account the typical uncertainty in the TRGB ($\sim0\fm15$), as well as uncertainties of the HST photometry zero point ($\sim0\fm05$), the aperture corrections ($\sim0\fm05$), and the crowding effects ($\sim0\fm06$) added quadratically, we estimate the uncertainty in the derived distances to be about $8\%$.
Some additional comments about the galaxy properties are briefly discussed below. The galaxies are listed in order by increasing Right Acsention.
[**ESO 349-031= SDIG.**]{} This dIr galaxy belongs to a group (filament) in Sculptor. Its TRGB distance of 3.21 Mpc turns out to be 0.9 Mpc less than a former estimate derived from the Tully-Fisher (TF) relation by Karachentsev et al. (2003a). Judging from its distance and radial velocity, SDIG is a companion to bright spiral galaxy NGC 7793.
[**NGC 247.**]{} Among the known galaxies in the Sculptor filament, this spiral galaxy remained the last one without reliable distance estimate. Dimensions of NGC 247 (27$\arcmin\times7\arcmin$) extend far beyond the ACS field. We targeted the northern side of the galaxy at a distance of 6$\farcm5$ from the nucleus which is relatively free from bright stellar complexes. Nevertheless, about $1.7\times 10^5$ stars have been detected in this field. The derived TRGB distance to NGC 247, 3.65 Mpc, agrees with the distance estimate, 4.1 Mpc, obtained from the TF- relation (Karachentsev et al. 2003a).
[**KKH 6.**]{} According to its radial velocity and distance, this dIr galaxy is located at a far outskirt of the group around the galaxy pair Maffei 1 and Maffei 2. The structure of this group is strongly compromised by Galactic extinction.
[**UGCA 86.**]{} This Magellanic type irregular galaxy with a prominent region of star formation (VII Zw 9) at its southern side has been imaged with WFPC2 by Karachentsev et al. (2003b), however, the former observations yield only the lower limit of its distance, $D > 2.2$ Mpc. Our present distance estimate, 2.96 Mpc, confirms the suggestion that UGCA 86 is a companion to the giant spiral IC 342 situated at a distance of 3.28 Mpc (Saha et al. 2002).
[**UGCA 92.**]{} This irregular galaxy with low radial velocity, $V_{LG} = 89$ km s$^{-1}$, is situated in a zone of strong extinction. Karachentsev et al. (1997) estimated its distance to be 1.8 Mpc based on the luminosity of brightest blue stars. With the new TRGB distance, 3.01 Mpc, the galaxy, as well as UGCA 86, turns out to be a physical member of the group around IC 342. Note that 75 arcmin away from UGCA 92 there is another galaxy, NGC 1569, of almost the same radial velocity $V_{LG} =
88$ km s$^{-1}$. Makarova & Karachentsev (2003) carried out stellar photometry of two HST/WFPC2 fields at a far periphery of NGC 1569 and derived two possible distance estimates: 1.95$\pm$0.2 Mpc and 2.8$\pm$0.2 Mpc. The second estimates agrees better with the new distance of UGCA 92.
[**ESO 121-20 = KKs 19.**]{} This very isolated dIr galaxy was detected in the HI line by Huchtmeier et al. (2001). Its individual distance estimate, 6.05 Mpc, is derived by us for the first time. With this distance, the galaxy has a high hydrogen mass-to-luminosity ratio, $M(HI)/L_B$ = 2.9 as well as high indicative mass-to-luminosity ratio, $M_{25}/L_B$ = 18.5 in solar units that gives evidence of the existence around ESO 121–20 of an extended HI envelope like around some other isolated irregular galaxies: DDO 154 and NGC 3741 (Begum et al. 2005).
[**KKH 37 = Mailyan 16.**]{} This dIr galaxy of low surface brightness is situated at the northern periphery of the IC 342 group. The TRGB distance to KKH 37, 3.39 Mpc, is just the same as to IC 342 and NGC 2403. In this obscured region of sky there may be other dwarf galaxies, undetected so far, which fill the gap between the two groups around these bright spiral galaxies.
[**ESO 059-01.**]{} This is an isolated irregular galaxy with a high indicative mass-to-luminosity ratio, $M_{25}/L_B = 15.2 M_{\sun}/L_{\sun}$ at the TRGB distance $D$ = 4.57 Mpc.
[**DDO 52 = UGC 4426.**]{} This dIr galaxy is very isolated. The nearest galaxy of normal luminosity, NGC 2683, is located about 2.5 Mpc away from DDO 52. The present case demonstrates to us that a galaxy of 10 Mpc distance is reachable with ACS in a single orbit SNAP observation.
[**D564-08.**]{} This dIr galaxy of low surface brightness from a list of Taylor et al. (1996) is a probable distant companion to the giant spiral galaxy NGC 2903. Its radial velocity, $V_{LG} = 365$ km s$^{-1}$ is surprisingly low for the distance of 8.67 Mpc, giving an individual Hubble ratio $H_i = 42$ km s$^{-1}$ Mpc$^{-1}$. A similar low value, $H_i = 39$ km s$^{-1}$ Mpc$^{-1}$, is also found for the isolated galaxy DDO 52 discussed above.
[**D634-03.**]{} This is the most unusual object of low surface brightness from the list by Taylor et al. (1996). Its low radial velocity, $V_{LG} = 172$ km s$^{-1}$ measured by Schombert et al. (1997) was later confirmed by Huchtmeier (personal communication), who derived $V_{LG} = 173$ km s$^{-1}$, the HI line width $W_{50} = 34$ km s$^{-1}$, and the HI flux $F = 0.25$ Jy km s$^{-1}$. The RGB of D634-03 is not seen distinctly in its CM diagram. A probable position of the TRGB seems to be near $I = 25\fm9$ which corresponds to the galaxy distance 9.46 Mpc. With an apparent total magnitude of $B = 17\fm5$, D634-03 has an absolute magnitude of $-$12.54, the hydrogen mass-to-luminosity ratio 0.37 $M_{\sun}/L_{\sun}$, and the total (indicative) mass-to-luminosity ratio 10 $M_{\sun}/L_{\sun}$. An individual Hubble ratio of this isolated galaxy is only 18 km s$^{-1}$ Mpc$^{-1}$ indicating a high peculiar velocity.
[**D565-06.**]{} One more galaxy of low surface brightness from Taylor et al. (1996). Its low radial velocity, $V_{LG} = 386$ km s$^{-1}$, contrasts with the large TRGB distance, 9.08 Mpc. Based on this distance, D565-06 is a companion to NGC 2903, which has $V_{LG} = 442$ km s$^{-1}$ and a distance of 8.9 Mpc from the luminosity of its brightest stars.
[**IKN.**]{} This galaxy of very low surface brightness is a new dwarf spheroidal member of the M 81 group. IKN is situated 1$\arcmin$ south from a bright star, mimicking the star reflex on POSS-II plates. Our ACS photometry reveals $2\times 10^4$ stars seen in both filters. Most of them belong to RGB population. Near the center of IKN, we found a candidate globular cluster marked in Fig. 4 by a circle. From its dimension (2$\farcm$7) and apparent magnitude, $B_T = 16.0$, IKN resembles another dSph member of this group, F8D1 observed with WFPC2 by Caldwell et al. (1998).
[**HS 117.**]{} This dwarf system was found by Huchtmeier & Skillman (1998), who detected it in the HI line with $V_h = -37$ km s$^{-1}$, i.e. in the range of Galactic hydrogen emission. The CM diagram of HS 117 on Fig. 5 exhibits a distinct sequence of RGB stars as well as some number of bluish stars. Based on its optical and HI properties, HS 117 may be classified as a dwarf galaxy of the transition dIr/dSph type.
[**NGC 4068.**]{} This blue dwarf galaxy belongs to the Canes Venatici I (CVn I) cloud. Makarova et al. (1997) estimated its distance via the brightest stars to be 0.9 Mpc greater than the new distance of 4.31 Mpc to NGC 4068 derived by us from the TRGB.
[**NGC 4163.**]{} This is another blue and compact galaxy in the CVn I cloud. Its old distance, 3.6 Mpc, was estimated by Tikhonov & Karachentsev (1998) from the brightest stars. Our new estimate of 2.96 Mpc from the TRGB places NGC 4163 at the nearby edge of the CVn I cloud which makes it the second nearest BCD galaxy.
[**UGC 7242 = KKH 77.**]{} A bright star projected into the northern side of this dIr galaxy renders stellar photometry of UGC 7242 to be incomplete. The galaxy is situated at the far outskirt of the M 81 group, behind the main body of the group.
[**IC 779 = UGC 7369.**]{} This is a lenticular galaxy with a semi-stellar nucleus. Despite its low radial velocity, $V_{LG} = 198$ km s$^{-1}$, IC 779 does not look to be a nearby object. For this reason it was excluded from the Local Volume galaxies (see Table 3 in CNG, Karachentsev et al. 2004). The distribution of the resolved red stars over the ACS area reveals that most are concentrated within the main optical boundary of the galaxy. The CM diagram of IC 779 in Fig.5 shows what might be an upper part of the RGB with the TRGB position at $I \sim 26\fm3$. Alternatively, these stars might be part of the asymptotic giant branch (AGB). From its position on the sky, it is suspected that this galaxy is a member of the Coma I group. Assuming we are picking up the TRGB, the derived distance to IC 779 is 11.6 Mpc. The plausible association with the Coma I group would place the galaxy at 16 Mpc (Tonry et al. 2001) whence the TRGB would be lost at the $I \sim 27$ limit of our observations. This ambiguity created by AGB populations demonstrates the breakdown of the TRGB method near the photometric limit. In the case of single orbit observations with ACS of galaxies with young populations, the limit of reliable TRGB measures is $\sim 10$ Mpc.
[**NGC 4605.**]{} This bright Sdm galaxy is situated in the general field between the M81 group and CVn I cloud. Our ACS observations were pointed on the eastern side of NGC 4605 about 1$\farcm$5 far from its star-like nucleus. In the ACS field we discover more than $10^5$ stars seen in both $V$ and $I$ filters. An overwhelming majority of them belong to the RGB population with TRGB position at $I = 24\fm67$, yielding the galaxy distance to be 5.47 Mpc.
[**HIPASS J1247-77.**]{} This is a dIr galaxy found in the HIPASS blind survey (Kilborn et al. 2002). The galaxy is situated in the zone of strong extinction, $E(B-V) = 0.75$, and its CMD is heavily contaminated by Milky Way stars. The CM diagram derived by us for the stars located only within the optical boundary of the galaxy (see Fig. 5) reveals the red giant branch population with the TRGB position at $I = 24\fm9$, corresponding to the distance of 3.16 Mpc. In our list, HIPASS J1247-77 is the only galaxy originally discovered in the HI line, but its global parameters: $M(HI)/L_B = 0.20$ and $M_{25}/L_B = 1.0$ in solar units do not distinguish it from other dIr galaxies.
[**UGC 8215.**]{} This dIr galaxy in the CVn I cloud was resolved into stars for the first time by Makarova et al. (1997), who estimated its distance to be 5.6 Mpc via the brightest stars. The CM diagram derived from our ACS data yields the TRGB distance of 4.55 Mpc which does not change its membership in the CVn I cloud.
[**UGC 8638.**]{} This is another compact irregular galaxy in the direction of the CVn I cloud. Because of the presence in UGC 8638 of bright compact stellar associations, Makarova et al. (1998) were able to determine only the lower limit to its distance, $D > 2.3$ Mpc. Our ACS photometry of UGC 8638 yields the TRGB distance 4.27 Mpc, typical for the CVn I cloud.
[**KK 230 = KKR 3.**]{} This dIr galaxy of very low surface brightness is one of the faintest ones among the known galaxies of the general field. Our ACS photometry yields for KK 230 the TRGB distance of 1.92 Mpc in agreement with a previous TRGB estimate, 1.90 Mpc, obtained by Grebel (personal communication) from observations with the 10-m Keck telescope. We also performed surface photometry of the galaxy based on its ACS images and derived the galaxy magnitude $I(R < 40\arcsec$) = 15$\fm$6$\pm0\fm15$, the integrated color $(V - I) = 0.90$ inside the same radius $R$, the central $I$ band surface brightness $22.9\pm0.2^m/\sq\arcsec$, and the exponential profile scale $(13.4\pm0.1)\arcsec$. Assuming for KK 230 a typical color $(B - V) = 0.50$, we estimate its integrated blue magnitude to be $B = 17\fm0\pm0\fm25$, yielding the absolute magnitude $M_B = -9.47$. Then, the hydrogen mass-to-luminosity ratio and the indicative mass-to- luminosity ratio are 2.3 and 3.3 in solar units, respectively.
[**IC 4662.**]{} This is an isolated dwarf galaxy of high surface brightness with star formation complexes especially prominent at the northern galaxy side. We measured for IC 4662 the TRGB distance to be 2.44 Mpc. That makes this galaxy the nearest known representative of BCD objects. It is amazing that this bright ($ B = 11\fm74$) galaxy with the radial velocity of $ V_{LG} = 145$ km s$^{-1}$ was never resolved into stars before.
[**KK 246 = ESO 461-036.**]{} The irregular galaxy of low surface brightness is the most isolated system in the Local Volume. Being at the TRGB distance of 7.83 Mpc, KK 246 is situated just at the edge of the Local Void described by Tully (1988). Nevertheless, the global parameters of KK 246: $M(HI)/L_B = 2.4 M_{\sun}/L_{\sun}$ and $M_{25}/L_B = 4.7 M_{\sun}/L_{\sun}$ do not distinguish KK 246 from other dIrs situated in the known nearby groups.
Peculiar velocities of nearby galaxies
=======================================
A significant part of the scatter of nearby galaxies in the Hubble diagram (Fig. 1) is caused by the virial motions in groups. According to Karachentsev (2005), the mean-square virial velocity of galaxies along the line of sight in 9 nearby groups ranges from 54 km s$^{-1}$ (IC 342 group, Sculptor filament) to 105 km s$^{-1}$ ( Cen A group) with the median $\sigma_v = 71$ km s$^{-1}$. To study properties of peculiar velocities of the field galaxies themselves, we refined the sample of LV galaxies to exclude group members, keeping only galaxies with the tidal index $TI < 0$. By the definition of $TI$ (Karachentsev et al. 2004), such a galaxy has a crossing time with respect to its significant neighbor larger than the cosmic expansion time, $H^{-1}$. For each of these 110 field galaxies, we determined an individual Hubble ratio, $H_i = (V_{LG})/D$. The distribution of this parameter for the LV galaxies is presented in the left panel of Fig. 6. Typical errors on radial velocities ( $< 5$ km s$^{-1}$) do not appreciably distort this distribution. The bulk of galaxies on the histogram follow a Gaussian distribution with the mean $<H> = 68$ km s$^{-1}$ Mpc$^{-1}$ and the standard deviation $\sigma(H) = 15$ km s$^{-1}$ Mpc$^{-1}$ that is 2.2 times larger than the expected scatter caused by 10% errors in distance measurements. On the left shoulder of the histogram, we recognize an excess number of galaxies with $H =
(8 - 32)$ km s$^{-1}$ Mpc$^{-1}$.
Adopting the mean Hubble parameter for the LV galaxies to be 68 km s$^{-1}$ Mpc$^{-1}$, we obtain a distribution of the peculiar velocities of nearby isolated galaxies, $V_{pec} = V_{LG} - <H> D$, seen on the right panel of Fig. 6. Again, the number galaxy distribution can be described by a Gaussian law with $\sigma(V_{pec}) = 63$ km s$^{-1}$ and an asymmetric tail extended far towards negative values.
Apart from 110 isolated LV galaxies with accurate distance estimates via cepheids or TRGB, we added to histograms in Fig. 6 five galaxies, which were listed in Table 3 of CNG as distant objects with low radial velocities. Distances to these galaxies were estimated by less precise methods (from surface brightness fluctuations, SBF, Tully-Fisher relation, TF, or luminosity of the brightest stars, BS). Distance estimates for these galaxies are greater than 10 Mpc, but their radial velocities satisfy a condition $V_{LG} < 500$ km s$^{-1}$. Basic parameters of these are listed in Table 2. Besides NGC 1400, situated in the Eridanus group, the others look to be quite isolated objects. They all are placed in Fig. 6 as the extreme cases with $H < 32$ km s$^{-1}$ Mpc$^{-1}$ or $V_{pec} < -500$ km s$^{-1}$.
Different reasons can cause the observed asymmetric distribution of galaxies on their peculiar velocities with a skewness toward negative values. An anisotropy of the Local Hubble flow found by Karachentsev & Makarov (1996, 2001) is among them. The main feature of this phenomena is the low local Hubble parameter value seen in directions toward the poles of the Local Supercluster. Such an effect is expected because of gravitation decelerating of galaxies ofset from the main (most dense) plane of the Supercluster. The character of the local anisotropy is seen in Fig. 7, which displays peculiar velocities of galaxies versus the elevation above the Supergalactic plane as an angle SGB (left panel) and in megaparsecs as SGZ (right panel). In spite of a considerable scatter of galaxies on the diagrams (caused, in particular, by a residual anisotropy of the Hubble flow within the Supergalactic plane), the trends of $V_{pec}$ with SGB and SGZ are clearly seen. The regression $< V_{pec}|SGB>$ has a slope $(-2.5\pm0.5$) km s$^{-1} deg^{-1}$, and the regression $< V_{pec}|SGZ>$ is characterized by a slope $(-43\pm4)$ km s$^{-1}$ Mpc$^{-1}$. The last quantity is of order of the Hubble parameter, meaning that the local anisotropy on Z-coordinate, $d|V_{pec}|/dZ = -0.6 <H>$, turns out to be rather significant.
The distribution on the sky of nearby galaxies with large negative peculiar velocities looks very clumpy. Among ten galaxies with moderate peculiar velocities, \[$-$200, $-$500\] km s$^{-1}$, seven: UGC 3755, DDO 47, KK 65, UGC 4115, D564-08, D634-03, and D565-06 are situated in a filament aligned along 25$\degr$ in SGB in the Gemini – Cancer constellations. Moreover, six of the seven galaxies with $V_{pec} < -500$ km s$^{-1}$ are concentrated within a small ring of radius 5$\degr$ in the Coma constellation just at the Supergalactic equator. Four of these 6 are superposed on the Coma I group, a region of 5 x 5 $\degr$ around NGC 4494 identified as group 14-1 in the Nearby Galaxies Catalog (Tully 1987). This tight group of early-type galaxies at a distance of 16 Mpc (Tonry et al. 2001) has a mean heliocentric velocity of 902 km s$^{-1}$. Its dispersion of 283 km s$^{-1}$ has the consequence that several of its members scatter into our $V_{LG} < 550$ km s$^{-1}$ sample.
Figure 8 presents a distribution of the distances and peculiar velocities of nearby galaxies. Two straight lines, symmetric with respect to $V_{pec} = 0$, indicate a sector of 10% errors in galaxy distance estimates. It is seen that about 2/3 of the galaxies are situated outside this sector. The inclined solid line indicates a zone of observational selection corresponding to $V_{LG} = 550$ km s$^{-1}$ : galaxies without individual distance estimates were included into the CNG only if their corrected radial velocities do not exceed 550 km s$^{-1}$. Therefore, one may expect the existence of populations of other galaxies, like NGC 925, which have $V_{LG} > 550$ km s$^{-1}$, but $D < 10$ Mpc.
Concluding remarks
===================
In the Catalog of 451 LV galaxies (CNG), there are only 214 galaxies with precise distance estimates from luminosities of cepheids and the TRGB, including our present ACS observations of 25 galaxies. Among these, we find a few galaxies whose radial velocities differ from the expectations of a homogeneous isotropic Hubble flow. Considering the sample of 110 LV galaxies that have accurate distance estimates and are situated outside known nearby groups, we derive the mean value of a local Hubble constant to be 68 km s$^{-1}$ Mpc$^{-1}$ and the 1D peculiar velocity dispersion of $\sigma_v = 63$ km s$^{-1}$. Part of this velocity dispersion is caused by anisotropy of the local Hubble flow since the rate of expansion along the Local Supercluster poles is about half that in the LSC plane.
The all-sky distribution of nearby galaxies with high peculiar velocities is unusual. A majority of galaxies with $-500 < V_{pec} < -200$ km s$^{-1}$ are situated in Gemini – Cancer constellations, forming a filament of $\sim25\degr$ length along an SGB meridian. This area lies in the region of the ’Leo Spur’ in the nomenclature of the Nearby Galaxies Catalog (Tully 1987), the most pronounced part of the ’Local Velocity Anomaly’ (Tully, Shaya, and Pierce 1992). In the model presented by those authors, the Leo Spur is converging on the filament in which we live, the two structures drawn together by their mutual attraction. The Gemini – Cancer region is located within the zone of a systematic “blind” survey in the HI line at Arecibo (the project ALFALFA, Giovanelli et al. 2005). This deep survey likely will discovery more objects within the region of the Local Velocity Anomaly.
If one looks around the sky for all galaxies with $V_{pec} < -500$ km s$^{-1}$, excluding the well-known cases that lie in the Virgo and Fornax clusters, one currently finds 7 examples. Four of these (NGC 4150, UGC 7131, IC 779, KK 127) lie in the tight knot of early type galaxies around NGC 4494 commonly called the Coma I group. One (NGC 1400) is in a similar knot of early type galaxies around NGC 1407 (Gould 1993). Another (UGC 7321) can probably be attributed to backside infall into the Virgo Cluster. The remainder (UGC 6782) may likewise be attributed to Virgo infall or may be assigned a large peculiar velocity due to a falacious distance.
Perhaps it is surprising that there are so [*few*]{} systems with large anomalous velocities. Those few are in very small sectors of the sky and almost all are projected onto the nearest important knots of early-type systems; regions of high inferred mass concentration. The intermediate amplitude peculiar velocities in the Gemini - Cancer constellations appear to be reflections of large-scale streaming; in this case, probably the result of the attraction between the nearest pair of filaments, each with masses in the range of $10^{14} M_{\odot}$ (Tully et al. 1992). Otherwise, galaxy velocities are remarkably quiet about the local expansion, with rms random motions only $\sim 60$ km s$^{-1}$.
Baryshev Yu.V., Chernin A.D., Teerikorpi T., 2001, A&A, 378, 729 Begum A., Chengalur J.N., Karachentsev I.D., 2005, A&A, 433L, 1 Bellazzini M., Ferraro F.R., Pancino E., 2001, ApJ 556, 635 Caldwell, N., Armandroff, T.E., Da Costa, G.S., & Seitzer, P. 1998, AJ, 115, 535 Chernin A.D., 2001, Physics-Uspekhi, 44, 1099 Da Costa G.S., Armandroff T.E., 1990, AJ 100, 162 Ferrarese L., et al. 2000, ApJ 529, 745 Giovanelli R., Haynes M.P., Kent B.R. et al. 2005, AJ (accepted) Gould, A., 1993, ApJ, 403, 37 Governato F., Moore B., Cen R. et al. 1997, NewA, 2, 91 Huchtmeier, W.K., Karachentsev, I.D., & Karachentseva, V.E. 2001, A&A, 377, 801 Huchtmeier W.K., Skillman E.D., 1998, A&AS, 127, 269 Karachentsev I.D., 2005, AJ, 129, 178 Karachentsev I.D., Karachentseva V.E., Huchtmeier W.K., Makarov D.I., 2004, AJ, 127, 2031 Karachentsev, I.D., Sharina, M.E., Dolphin, A.E. et al. 2003a, A&A, 398, 467 Karachentsev I.D., Sharina M.E., Dolphin A.E., Grebel E.K., 2003b, A&A, 408, 111 Karachentsev, I.D., Makarov, D.I., Sharina, M.E. et al. 2003c, A&A, 398, 479 Karachentsev, I.D., & Makarov, D.I. 2001, Afz, 44, 5 Karachentsev, I.D., Drozdovsky, I., Kajsin, S., et al. 1997, A&AS 124, 559 Karachentsev, I.D., & Makarov, D.I. 1996, AJ, 111, 535 Kilborn, V.A., Webster, R.L., Staveley-Smith, L. et al. 2002, AJ, 124, 690 Lee, M.G., Freedman, W.L., & Madore, B.F. 1993, AJ, 106, 964 Lynden-Bell D., 1981, Observatory, 101, 111 Maccio A.V., Governato F., Horellou C., 2005, MNRAS, 359, 941 Makarova, L.N., Karachentsev, 2003, Astrofizica, 46, 181 Makarova, L.N., Karachentsev, I.D., Takalo, L. et al. 1998, A&AS, 128, 459 Makarova, L.N., Karachentsev, I.D., & Georgiev, Ts.B., 1997, AstL, 23, 378 Saha, A., Claver, J., & Hoessel, J.G. 2002, AJ, 124, 839 Sakai S., Madore B.F., Freedman W.L., 1996, ApJ 461, 713 Sakai S., Ferrarese L., Kennicutt R.C., Saha A., 2004, ApJ, 608, 42 Sandage A.R., 1986, ApJ, 307, 1 Sandage A., Tammann G.A., Hardy E., 1972, ApJ, 172, 253 Schlegel, D.J., Finkbeiner, D.P., & Davis, M., 1998, ApJ, 500, 525 Schombert, J.M., Pildis, R.A., & Eder, J.A. 1997, ApJS, 111, 233 Shaya E., Peebles P.J.E., & Tully R.B., 1995, ApJ, 454, 15 Sirianni M., Jee M.J., Benitez N. et al., 2005, PASP (in press) Taylor C.N., Thomas D.L., Brinks E., Skillman E.D., 1996, ApJS, 107, 143 Tikhonov, N.A., & Karachentsev, I.D. 1998, A&AS, 128, 325 Tonry, J.L., Dressler, A., Blakeslee, J.P. et al. 2001, ApJ, 546, 681 Tully R.B., 1982, ApJ, 257, 389 Tully, R.B. Nearby Galaxy Catalog, Cambridge Univ. Press, 1987 Tully R.B., Shaya, E.J., & Pierce, M.J., 1992, ApJS, 80, 479
[lcrrrcrr]{} E349-031,SDIG & 000813.3$-$343442 & 216 & 23.50& 13 990 & 0.02 & 27.53 & 3.21\
N247 & 004708.3$-$204536 & 215 & 23.80& 174 560 & 0.04 & 27.81 & 3.65\
KKH6 & 013451.6$+$520530 & 270 & 24.49& 8 150 & 0.68 & 27.86 & 3.73\
UA86 & 035949.5$+$670731 & 275 & 25.14& 69 260 & 1.83 & 27.36 & 2.96\
UA92 & 043200.3$+$633650 & 89 & 24.88& 30 840 & 1.54 & 27.39 & 3.01\
& & & & & & &\
E121-20,KKs19 & 061554.5$-$574335 & 309 & 24.94& 9 350 & 0.08 & 28.91 & 6.05\
KKH37 & 064745.8$+$800726 & 204 & 23.75& 10 900 & 0.15 & 27.65 & 3.39\
E059-01 & 073119.3$-$681110 & 245 & 24.53& 42 050 & 0.28 & 28.30 & 4.57\
DDO52 & 082828.5$+$415124 & 398 & 26.08& 9 950 & 0.07 & 30.06 & 10.28\
D564-08 & 090254.0$+$200431 & 365 & 25.69& 3 070 & 0.05 & 29.69 & 8.67\
& & & & & & &\
D634-03 & 090853.5$+$143455 & 173 & 25.90& 1 860 & 0.07 & 29.90 & 9.46\
D565-06 & 091929.4$+$213612 & 386 & 25.82& 2 670 & 0.08 & 29.79 & 9.08\
IKN & 100805.9$+$682357 & $-$ & 23.94& 19 230 & 0.27 & 27.87 & 3.75\
HS117 & 102125.2$+$710658 & 116 & 24.16& 5 890 & 0.22 & 27.99 & 3.96\
N4068 & 120402.4$+$523519 & 290 & 24.16& 75 830 & 0.09 & 28.17 & 4.31\
& & & & & & &\
N4163 & 121208.9$+$361010 & 164 & 23.35& 68 180 & 0.04 & 27.36 & 2.96\
U7242,KKH77 & 121407.4$+$660532 & 213 & 24.66& 28 240 & 0.04 & 28.67 & 5.42\
IC779,U7369 & 121938.8$+$295259 & 198 & 26.3:& 2 100 & 0.03 & 30.32 & 11.6\
N4605 & 124000.3$+$613629 & 276 & 24.67& 80 930 & 0.03 & 28.69 & 5.47\
HIPASSJ1247-77& 124732.6$-$773501 & 155 & 24.9 & 2 560 & 1.44 & 27.50 & 3.16\
& & & & & & &\
U8215 & 130803.6$+$464941 & 297 & 24.26& 7 780 & 0.02 & 28.29 & 4.55\
U8638 & 133919.4$+$244633 & 273 & 24.13& 29 850 & 0.03 & 28.15 & 4.27\
KK230 & 140710.7$+$350337 & 126 & 22.40& 4 040 & 0.03 & 26.42 & 1.92\
IC4662 & 174706.3$-$643825 & 145 & 23.02& 167 770 & 0.13 & 26.94 & 2.44\
KK246,E461-36 & 200357.4$-$314054 & 401 & 26.0:& 2 990 & 0.58 & 29.47 & 7.83\
[lcccrll]{} N1400 & 033930.6$-$184115 & 485 & 26.4 & $-$1310 & SBF, Tonry et al. (2001)\
U6782 & 114857.3$+$235016 & 452 & 14.0 & $-$500 & BS, Makarova et al. (1998)\
U7131 & 120911.8$+$305425 & 226 & 14.0 & $-$726 & BS, Makarova et al. (1998)\
N4150 & 121033.6$+$302406 & 198 & 13.7 & $-$733 & SBF, Tonry et al. (2001)\
KK127 & 121322.7$+$295518 & 105 & 13.0 & $-$779 & SB vs. Lumin., present paper\
U7321 & 121734.1$+$223222 & 345 & 20.0 & $-$1015 & IR-TF, present paper\
| |
Session 1, breakfast in location #2: we’re celebrating the first slow-down pre recall cue!!
Today is the first time I get a moment’s hesitation – Game’s body or her mind (but probably not both) consider turning around before I call! Watch closely to catch that moment. The slow-down happens right between seconds 00:02 and 00:03. This is amazing and shows me that we’re moving in the right direction!
In the commentary of the video, while Game is eating, I mention that this session was extra difficult because we just saw the intermittent neighborhood cat, which likely upped Game’s arousal. But! Retrospectively, I wonder if seeing the cat actually made things easier rather than harder.
Here’s why: I do a lot – A LOT! – of recalls reinforced with access to chasing critters (mostly alley cats who don’t care or will jump out of reach and then give Game the finger, squirrels, and birds). She already knows that the fastest way to get to chase, which she loves, is to first check in with me and perform … whatever I’m asking, but usually a recall, a hand touch, middle position, or a sit. There was no cat recall reinforced by chasing today, but the cat thoughts on Game’s mind may have put her into more of a mindset of “distraction – check in with handler” than she’s used to having around food.
(As I mentioned in an earlier post, I allow Game to scavenge freely and rarely require behaviors of her when she finds food in the street. She scavenges every day, because finding food is very common here. I’d guesstimate that every day, she encounters between 2 and 5 steet meal. There is more free scavenging than kibble recall cue transfer training).
Going straight for food has a long and strong reinforcement history – but going after cats doesn’t because I never let her go after a cat without giving me a behavior first! It’ll be interesting to see what happens in our next session, when there is no pre-meal cat!
Session 2, dinner in location 2 (no cat, and no slow-down)
We didn’t meet the intermediate cat before this session, and Game didn’t slow down before I called her. We’ll see what tomorrow brings!
In today’s video, I explain my game plan for now:
+ Immediately release to the distraction with “okay” after the recall …
+ Unless Game predicts the “okay” relase. In that case, click or “Get it.”
+ If I do not have to recall her at all, but she turns around on her own, I will mark the moment of turning with “okay” (not requiring her to complete her return to me).
I’ll stick to this plan for the next few sessions.
If you want to work on this or similar behaviors with your own dogs, join me in Out and About at Fenzi Dog Sports Academy! Or check out any of our other classes … Game and I, for example, will be doing Nicole Wiebusch’s Heeling class at Gold this term! And we’ll be following along with Sara Brueske’s Bomb Proof Behaviors at Bronze! | https://chrissisdogtraining.com/distractions-as-cues-day-8-the-first-outside-pre-recall-hesitation/ |
There is currently one home available in Bradley Point South with a price of $230,000. For availability or more information about homes for sale in Bradley Point South call Carlos Colon at 770-314-1285 .
Bradley Point South is located in Savannah GA, Chatham County. There are currently 1 homes active and for sale inside the neighborhood with the average price being $230,000. The number of homes for sale in Bradley Point South is always changing so if you see a home you like and you would like to schedule a time to take a look please give me a call at 770-314-1285. | https://www.georgiaperimeterhomes.com/ga/savannah/neighborhoods/bradley-point-south |
Allen Institute for AI
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Construction of the Literature Graph in Semantic Scholar
- Waleed Ammar, Dirk Groeneveld, +20 authors Oren Etzioni
- Computer Science
- NAACL
- 6 May 2018
This paper reduces literature graph construction into familiar NLP tasks, point out research challenges due to differences from standard formulations of these tasks, and report empirical results for each task. Expand
TLDR
A Dataset of Peer Reviews (PeerRead): Collection, Insights and NLP Applications
- Dongyeop Kang, Waleed Ammar, +4 authors Roy Schwartz
- Computer Science
- NAACL
- 25 April 2018
The first public dataset of scientific peer reviews available for research purposes (PeerRead v1) is presented and it is shown that simple models can predict whether a paper is accepted with up to 21% error reduction compared to the majority baseline. Expand
TLDR
Structural Scaffolds for Citation Intent Classification in Scientific Publications
- Arman Cohan, Waleed Ammar, Madeleine van Zuylen, Field Cady
- Computer Science
- NAACL
- 1 April 2019
This work proposes structural scaffolds, a multitask model to incorporate structural information of scientific papers into citations for effective classification of citation intents, which achieves a new state-of-the-art on an existing ACL anthology dataset with a 13.3% absolute increase in F1 score. Expand
TLDR
Fact or Fiction: Verifying Scientific Claims
- David Wadden, Kyle Lo, +4 authors Hannaneh Hajishirzi
- Computer Science
- EMNLP
- 30 April 2020
We introduce scientific claim verification, a new task to select abstracts from the research literature containing evidence that supports or refutes a given scientific claim, and to identify… Expand
SciREX: A Challenge Dataset for Document-Level Information Extraction
- Sarthak Jain, Madeleine van Zuylen, Hannaneh Hajishirzi, Iz Beltagy
- Computer Science
- ACL
- 1 May 2020
SciREX is introduced, a document level IE dataset that encompasses multiple IE tasks, including salient entity identification and document level N-ary relation identification from scientific articles, and a neural model is developed as a strong baseline that extends previous state-of-the-art IE models to document-level IE. Expand
TLDR
Apoptosis-related genes control autophagy and influence DENV-2 infection in the mosquito vector, Aedes aegypti.
- M. Eng, Madeleine van Zuylen, D. Severson
- Biology, Medicine
- Insect biochemistry and molecular biology
- 1 September 2016
Evidence is provided that apoptosis-related genes are also involved in regulating autophagy, and that Aedronc may play an important role in DENV-2 infection success in Ae. Expand
TLDR
Quantifying Sex Bias in Clinical Studies at Scale With Automated Data Extraction
- Sergey Feldman, Waleed Ammar, Kyle Lo, E. Trepman, Madeleine van Zuylen, Oren Etzioni
- Medicine
- JAMA network open
- 1 July 2019
It is suggested that sex bias against female participants in clinical studies persists, but results differ when studies vs participants are the measurement units. Expand
TLDR
Extracting a Knowledge Base of Mechanisms from COVID-19 Papers
- Aida Amini, Tom Hope, +4 authors Hannaneh Hajishirzi
- Computer Science
- NAACL
- 8 October 2020
This work pursues the construction of a knowledge base of mechanisms—a fundamental concept across the sciences, which encompasses activities, functions and causal relations, ranging from cellular processes to economic impacts, by developing a broad, unified schema. Expand
TLDR
MS2: Multi-Document Summarization of Medical Studies
- Jay DeYoung, Iz Beltagy, Madeleine van Zuylen, Bailey Kuehl, Lucy Lu Wang
- Computer Science
- EMNLP
- 13 April 2021
This work releases MS^2 (Multi-Document Summarization of Medical Studies), a dataset of over 470k documents and 20k summaries derived from the scientific literature that facilitates the development of systems that can assess and aggregate contradictory evidence across multiple studies, and is the first large-scale, publicly available multi-document summarization dataset in the biomedical domain. Expand
TLDR
Improving the Accessibility of Scientific Documents: Current State, User Needs, and a System Solution to Enhance Scientific PDF Accessibility for Blind and Low Vision Users
- Lucy Lu Wang, Isabel Cachola, +7 authors Daniel S. Weld
- Computer Science
- ArXiv
- 2021
A small sample of papers was evaluated for successful extraction of display equations and categories of paper objects identified for evaluation along with the common errors seen for each category, including semantic categories and common extraction errors. Expand
TLDR
...
1
2
... | https://www.semanticscholar.org/author/Madeleine-van-Zuylen/15292561 |
A handicap index is a numerical measure of a golfer's potential that is used to enable players of varying abilities to compete against one another. A handicap is intended to reflect a player's potential or "average best", not a player's overall average score; it is calculated based on the best 8 of the player's last 20 rounds, with a minimum of 5 rounds required before a handicap index is determined.
Your handicap index is the starting point. Whenever you play competitively, you need to calculate both your and your opponent's course handicap, which will tell you what your handicap is for the course you are playing. The easiest way to do this is to use the Course Handicap calculator in the Golf Canada App, which you can download for free from the Apple App Store or Google Play.
EXAMPLE
Suppose Sally has a handicap index of 17.9 and she is playing a match against Julie, who has a handicap index of 22.4. They are playing at Lakeview Golf Course in Mississauga, both playing from the red tees.
Sally's course handicap for the red tees at Lakeview: 16
Julie's course handicap for the red tees at Lakeview: 20
So Sally will give Julie 4 strokes, which translates to 1 stroke on each of the 4 most difficult holes, handicap number 1 through 4.
For more information on the World Golf Handicapping System, the handicap tracking tools available to you, or how to establish a handicap, please contact the Handicap Chair. | https://chapters.lpgaamateurs.com/education/handicap/ONGT |
Q:
Mutating the DOM with elements including different indexable variables
Hope my title isn't misleading!
In my quest discovering the power of loops, I would like to sort this:
I need to build these elements:
<div id="my-id">
<div class="my-class">
<input type="checkbox" id="checkbox-1" value="a">
<label for="checkbox-1">A</label>
</div>
<div class="my-class">
<input type="checkbox" id="checkbox-2" value="b">
<label for="checkbox-2">B</label>
</div>
<div class="my-class">
<input type="checkbox" id="checkbox-3" value="c">
<label for="checkbox-3">C</label>
</div>
<!-- etc, 9 more -->
</div>
I did this so far but don't know how to proceed to get the alphabet letters (both lower and uppercase) in the element.
const alphabet = ["A", "B", "C", "D", "E", "F", "G", "H", "I", "J", "K", "L"];
let html = "";
for (let i = 1; i <= 12; i++) {
html += `<div class = "my-class">
<input type = "checkbox" id = "checkbox-${i}" value = "?">
<label for = "checkbox-${i}">??`;
html += "</label></div>";
}
$("#here").html(html);
Is there a good way, or just hardcoding in the HTML file will be easier? (it's 12 inputs in total).
Thanks for the help in advance!!
A:
Repl Example
const alphabet = ["A", "B", "C", "D", "E", "F", "G", "H", "I", "J", "K", "L"];
let html = "";
for (let i = 0; i < alphabet.length; i++) {
let checkboxID = 'checkbox-'.concat(String(i).toLowerCase())
let checkboxValue = alphabet[i]
html += `
<div class = "my-class">
<input type="checkbox" id="${checkboxID}" value="${checkboxValue}">
<label for="${checkboxID}">${checkboxValue}</label>
</div>`;
}
or use Array.reduce...
const html = alphabet.reduce((_html, letter, letterIndex) => {
let checkboxID = 'checkbox-'.concat(String(letterIndex).toLowerCase())
let checkboxValue = letter
return _html += `
`
}, '')
| |
Radiology is the use of medical imaging procedures in the “diagnosis and treatment of disease” (Merriam-Webster Medical Dictionary, n.d.). A diagnostic radiologist may work alongside physicians to properly choose necessary exams or to consult technologists, while interventional radiologists perform minimally invasive procedures with the aid of imaging to diagnose and treat patients (“What Is a Radiologist?”, n.d.). Radiology procedures are essential to various branches of medicine including “surgery, pediatrics, obstetrics, cancer-care, trauma-response, [and] emergency medicine” and allow physicians to quickly and accurately treat patients (“What is radiology?”, n.d.).
A computed tomography scan, or CAT scan, involves the rotating of a thin x-ray beam around the patient and the use of small detectors to analyze the X-rays that pass through the targeted area. The signals produced are processed by a computer to construct cross-sectional images that may be used to construct a three-dimensional image of the patient (“Computed Tomography (CT)”, n.d.). A CT provides physicians with detailed images of internal organs, tissues, bones, and/or blood vessels in order to possibly identify various cancers, internal injuries, tumors, and/or clots (“Computed Tomography”, n.d.). Albeit life-saving, CT scans also carry risks. Ionizing radiation produced from the x-rays has the potential to biologically affect the tissue of patients and, though the risk is small, possibly cause cancer. However, the benefits of CT scans far outweigh risks. CT scans have provided a way to quickly asses life-threatening injuries during emergencies and improve the diagnosis of cancer. CT scans also reduce the need for exploratory surgery and act as guides for common surgeries and treatment procedures (“What are the benefits of CT scans?”, 2018).
Magnetic resonance imaging is a non-invasive procedure where a strong magnetic field is created through the use of powerful magnets, in order to align protons within the body. A radiofrequency current is then pulsed through the patient, causing the protons to “spin out of equilibrium, straining against the pull of the magnetic field” (“Magnetic Resonance Imaging (MRI)”, n.d.). Once the current is turned off, protons realign with the magnetic field releasing varying amounts of energy contingent to their chemical state. Sensors measure the energy released and allow physicians to differentiate between types of tissues. Contrast agents may be utilized to improve imaging. MRI scans are typically used to analyze the soft tissues of the body and can be used to diagnose aneurysms, tumors, or other injuries within muscles, tendons, ligaments, nerves or the spinal cord.
MRI scans may pose some difficulties. Due to the strong magnetic field being utilized, precautions may need to be taken if the patient has implants. Additionally, MRI scans tend to be more costly than x-ray procedures/ CT scans. However, unlike x-ray procedures, magnetic resonance imaging does not utilize radiation and does not pose the risk of causing cancer. MRI scanning allows physicians to safely diagnose and treat patients that require frequent imaging (“Magnetic Resonance Imaging (MRI)”, n.d.).
Ultrasound imaging produces internal body images through the emitting of high-frequency sound waves and the recording of their echoes. Ultrasounds are commonly used to analyze developing fetuses, internal organs, muscles, tendons, and blood vessels. Ultrasounds are typically non-invasive, however, some procedures occasionally require the insertion of a probe into the vagina “(for some obstetric or pelvic examinations), [the] rectum (for some prostate examinations) or [the] esophagus (for some heart examinations)” (“Ultrasound scan”, 2019). In other cases, ultrasounds are utilized as guides for invasive procedures such as biopsies. Ultrasounds may require an empty stomach or a full bladder for accurate results but otherwise, ultrasounds pose no difficulties or risks. Due to the lack of risks and the minimal cost of ultrasounds they are easily and widely utilized (“Ultrasound scan”, 2019). They allow physicians to safely diagnose and/or treat a variety of conditions.
A fluoroscopy procedure involves the continuous passing of an x-ray beam through the targeted body part of the patient. The procedure is implemented in the study of the “skeletal, digestive, urinary, respiratory, and reproductive systems” of the body (“Fluoroscopy Procedure”, n.d.). It’s often used in biopsies, cardiac catheterizations, lumbar punctures, and/or the placement of intravenous catheters. It also allows physicians to locate foreign bodies, carry out injections, or guide therapeutic procedures (“Fluoroscopy Procedure”, n.d.).
Due to the use of x-rays, the patient’s exposure to radiation through the fluoroscopy procedure may cause health issues. These health issues include skin or tissue injury, and in more serious cases, the development of cancer. Additionally, contrast dyes used within the procedure may induce allergic reactions (“Fluoroscopy”, 2019). However, the procedure allows physicians to accurately diagnose conditions and contributes greatly to the success of treatments and/or surgeries.
Disclaimer
This essay has been submitted by a student. This is not an example of the work written by our professional essay writers. You can order our professional work here. | https://eduzaurus.com/free-essay-samples/radiology-procedures-and-applications-ct-mri-ultrasound-fluoroscopy/ |
Solar and lunar eclipses are caused by the interactions of the shadows of the Earth and Moon. When the Moon is between the Earth and Sun, it can eclipse the Sun from a small portion of the Earth's surface; when the Earth's shadow crosses the Moon, it can cause a lunar eclipse.
between the bodies, the tidal bulges move around the rotating body to stay in alignment with the gravitational force between the bodies. This is why ocean tides on Earth rise and fall with the rising and setting of its Moon; the same effect occurs to some extent on all rotating orbiting bodies.
Since the bulge requires a small amount of time to shift position, the tidal bulge of the Moon is always located at a slight angle to the line between the closest points of the Moon and Earth. The misalignment of the tidal bulge with the body that caused it results in a small but significant gravitational force on the bulge, acting in the opposite direction of its rotation.The rotation of the satellite slowly decreases (and its orbital momentum simultaneously increases). This is the case where the Moon's rotational period is faster than its orbital period around its planet. If the opposite is true, tidal forces increase its rate of rotation and decrease its orbital momentum.
Almost all moons in the solar system are tidally locked with their primaries, since they orbit closely and tidal force strengthens rapidly with decreasing distance. In addition, Mercury is tidally locked with the Sun in a 3:2 resonance. Mercury is the only solar system body in a 3:2 resonance with the Sun. For every two times Mercury revolves around the Sun, it rotates on its own axis three times. In a more subtle way the planet Venus is tidally locked with the planet Earth, so that whenever the two are at their closest approach to each other in their orbits Venus always has the same face toward Earth (the tidal forces involved in this lock are extremely small). In general any object that orbits another massive object closely for long periods is likely to be tidally locked to it.
The Moon's tidal lock to the Earth made its far side even more mysterious: What could be there, on the unseen face of the Moon?
Was this article helpful? | https://www.fossilhunters.xyz/interior-of-earth/fundamental-facts-about-the-moon.html |
Q:
Haskell write your version of (.) function
Can someone help me with writing my own version of a (.) function in Haskell?
From this post Haskell write your version of a ($) function I know how to determine a type of this function, but I still have the problem with its body.
I also do not know why ghci refuses to use the name (..).
($$$) :: (b -> c) -> (a -> b) -> a -> c
($$$) f (g x) = ((f g) $) x
infixr 9 $$$
Another idea of mine was for instance this one:
($$$) :: (b -> c) -> (a -> b) -> a -> c
($$$) f (g x) = map (f) (g x)
infixr 9 $$$
The error message says that "Parse error in pattern: g".
A:
From the signature:
($$$) :: (b -> c) -> (a -> b) -> a -> c
your function needs 3 arguments. So I would start:
($$$) f g x = ...
| | \
| \ a
| \
| a->b
b->c
Update
This attempt at defining ($$$) does not work:
($$$) (f g) x = ...
It says that ($$$) takes two arguments. The way I've started to define ($$$) says that the function takes three arguments.
A:
Are you coming from Lisp? You still seem to assume lists everywhere...
As I already said in the other thread, lists have nothing to do with this task, so neither of (:), foldr or map can possibly be useful here.
More to the point, the occurence of (g x) in the left-hand side of the definition doesn't make sense. (This is not a list, but apparently you think it should be a kind of “argument list”).
As a matter of fact, you could define ($$$) in un-curried form this way:
($$$) :: (b->c) -> (a->b, a) -> c
($$$) f (g, x) = ...
...which is exactly the same thing as the more elegant
f $$$ (g, x) = ...
In this case, you have an argument tuple (g, x), which is more or less equivalent to a Lisp list.
In Haskell, we like to write functions curried though. The signature
($$$) :: (b -> c) -> (a -> b) -> a -> c
is in fact parsed as
($$$) :: (b -> c) -> ( (a -> b) -> (a -> c) )
Hence the way to define such a function is, at the most fundamental level
($$$) = \f -> (\g -> (\x -> ... ))
Which can be written short as
($$$) f g x = ...
or
(f $$$ g) x = ...
In the actual definition part, you should similarly get the grasp of how things are actually parsed. As you have by now figured out, the composition operator can be defined as
($$$) f g x = f(g(x))
In fact, only the outer parentheses are necessary here: the preferred form is
($$$) f g x = f (g x)
or indeed
($$$) f g x = f $ g x
If something like g x or (f g) appears on its own in an expression, it always means that the left function is applied to the right argument. For f g this doesn't make sense, because though f is a function it can not take another function as its argument, only the result of such a function. Well, to get such a result you need to apply g to an argument!
| |
---
abstract: 'Accretion disks around stellar-mass black holes (BHs) emit radiation peaking in the soft X-rays when the source is in the thermal state. The emerging photons are polarized and, for symmetry reasons, the polarization integrated over the source is expected to be either parallel or perpendicular to the (projected) disk symmetry axis, because of electron scattering in the disk. However, due to General Relativity effects photon polarization vectors will rotate with respect to their original orientation, by an amount depending on both the BH spin and the observer’s inclination. Hence, X-ray polarization measurements may provide important information about strong gravity effects around these sources. Along with the spectral and polarization properties of radiation which reaches directly the observer once emitted from the disk, in this paper we also include the contribution of returning radiation, i.e. photons that are bent by the strong BH gravity to return again on the disk, where they scatter until eventually escaping to infinity. A comparison between our results and those obtained in previous works by different authors show an overall good agreement, despite the use of different code architectures. We finally consider the effects of absorption in the disk material by including more realistic albedo profiles for the disk surface. Our findings in this respect show that considering also the ionization state of the disk may deeply modify the behavior of polarization observables.'
author:
- |
R. Taverna$^{1}$[^1], W. Zhang$^{2}$, M. Dovčiak$^{2}$, S. Bianchi$^{1}$, M. Bursa$^{2}$, V. Karas$^{2}$, G. Matt$^{1}$\
$^1$Dipartimento di Matematica e Fisica, Università Roma Tre, via della Vasca Navale 84, I-00146 Roma, Italy\
$^2$Astronomical Institute, Academy of Sciences of the Czech Republic, Boční II 1401, CZ-14100 Prague, Czech Republic\
date: 'Accepted …. Received …; in original form …'
title: 'Towards a complete description of spectra and polarization of black hole accretion disks: albedo profiles and returning radiation'
---
\[firstpage\]
stars: black holes – relativistic processes – accretion discs – X-rays: binaries – polarization.
Introduction {#intro}
============
Black holes (BHs) are the most compact astrophysical objects, which can be used as ideal laboratories to test physics in the presence of ultra-strong graviational fields. Different kinds of BHs have been identified so far and classified according to their mass. Stellar-mass BHs ($M\approx 10\,M_\odot$) are believed to be born mainly in the gravitational core-collapse of stars with a initial mass $\ga 25$–$30
\,M_\odot$ [see @whw02 for a review]. On the other hand, the different observational manifestations of active galactic nuclei (AGN) have been explained with the presence of supermassive BHs [$M\approx$ $10^6
$–$10^9\,M_\odot$, see e.g. @salp64; @zn64; @lb69], which have been observed to be hosted in centers of most galaxies, including our own Milky Way [see @kh13; @gr16]. Finally, intermediate-mass BHs ($M\approx10^2$–$10^5
\,M_\odot$) have been also reported in some dim AGN or associated to ultra-luminous X-ray sources [see @mez17 for a recent review].
Despite the fact that even light cannot escape from their event horizon, BHs have been observed so far as X-ray sources, through the electromagnetic radiation emitted from accretion disks in binary systems, as well as, in the case of intermediate and supermassive BHs, by studying the orbits of nearby objects (stars) influenced by the presence of their gravitational field [as in the case of the supermassive BH at the Galactic center, see @sch+02]. Very recently, BHs have been in the spotlight thanks to the results achieved by the LIGO/VIRGO collaboration, which detected for the first time the gravitational waves emitted in BH-BH merging events [@abb+16]. Nevertheless, electromagnetic observations still play a key role in understanding the physics of BHs.
General relativity plays a fundamental role in the physical processes that occur in the BH environment. The trajectories of photons which propagate close to a BH, for example, deviate from straight lines, following null geodesics that can be described in the proper space-time metric [@bar70]. Moreover, photon frequencies turn out to be gravitationally red-shifted as a result of the BH potential well, whereas the Doppler effect changes the photon frequency either way depending on the state of motion of the source with respect to the observer (Bardeen, Press & Teukolsky [-@bpt72]). However, strong gravity also influences the polarization states of photons. In fact, the polarization vectors are generally rotated, with respect to their original orientation, because of the parallel transport along null geodesics. The recent developments in X-ray polarimetry techniques [@cos+01; @bell+10] gave indeed new impetus to this field of research.
Theoretical models to investigate spectra and polarization from these sources have been developed by many authors in the past [see e.g. @laor+90; @matt+93; @rb94; @bao+97; @ak00; @lnm05; @lnm09; @kar06 and @sk13 for a comprehensive list of further references]. Furthermore, spectral and polarimetric studies on radiation coming from accretion disks and atmospheres in the case of AGN (either magnetized or not) have been carried out by @sil+09 [see also @sil02 [@sil+18]]. In the present paper we revisit in particular the work by @dov+08, first incorporating in their original treatment the contribution of “returning radiation”, i.e. photons which are forced by the strong BH gravity to return to the disk before reaching the observer at infinity. This issue has been already addressed by @sk09 [see also @sk10], who exploited a Monte Carlo code [exhaustively described in @sk13 see also @s+13] to properly take into account both vacuum transport and radiative processes that influence photon propagation around stellar-mass BHs. While we adopt Kerr metric in the present paper, we will also refer to the study carried out by @kraw12, who instead developed a ray-tracing code capable to give predictions for different kinds of space-time metrics.
Although a complete, self-consistent treatment of ionization is still deferred to a future work, we move a step towards the inclusion in the model of a realistic ioniziation profile of the disk material. To this aim we convolve the output of our code with a non-trivial prescription for the disk albedo, obtained using the external code [cloudy]{} [@cloudy]. The results show that both spectral and polarization properties of BH accretion disk emission are considerably modified by considering absorption in the disk with respect to the simple case of $100\%$ albedo. For this reason, in order to correctly interpret the physical and geometrical information that can be extracted from these sources using X-ray polarimetry, a proper study of the optical properties of the disk is required. This acquires even more significance in the light of the launch of the NASA-SMEX mission [*IXPE*]{} [@weiss+13], scheduled for 2021, which will be capable of probing X-ray polarimetric properties of bright accreting black hole binaries. The plan of the paper is as follows. In section \[section:themodel\] we briefly set up the theoretical model and present our main assumptions, while an overview of the numerical implementation is described in section \[section:numericalimplementation\]. Results are then illustrated in section \[section:results\]: in particular, the outputs of our codes are compared with the results previously obtained by @sk09 and @kraw12 in §\[subsection:100albedo\]; the effect of changing the optical depth of the electron-dominated atmosphere assumed to cover the disk surface are discussed in §\[subsection:differenttau\]; and the results obtained considering a different albedo prescription for the disk are presented in §\[subsection:albedo\]. Finally, we summarize our findings and present our conclusions in section \[section:discussion\].
The model {#section:themodel}
=========
We consider in this work only accretion disks around stellar-mass BHs in their thermal state, which are observed to emit radiation peaking in the soft X-rays [at about $1$ keV, see e.g. @sk09]. The space-time around the central BH is described by the Kerr metric, for different values of its dimensionless angular momentum per unit mass $a$.
We treat the accretion disk as a geometrically-thin standard disk [@ss73]. In particular, in order to dissipate their angular momentum, particles on the disk are assumed to rotate around the central BH with a Keplerian velocity. Photons are assumed to be emitted from the disk according to an isotropic blackbody (BB) distribution at different temperatures, following a Novikov-Thorne radial profile [a multicolor disk, see @nt73; @wang00 see also @cunn75 for a more complete relativistic treatment],
\[equation:ntprofile\] T(M,r,a) &= 741 f\_[col]{}()\^[-1/2]{} ()\^[1/4]{} &\
& \^[1/4]{}[keV]{}, &
where $M$ is the BH mass, $\dot{M}$ is the mass accretion rate, $\xi=
(r/r_{\rm g})^{1/2}$, with $r$ the radial coordinate and $r_{\rm g}=GM/
c^2$ the gravitational radius, and [see @pt74]
f(,a) &= , &
with $\xi_{1,2}=2\cos[(\arccos{a}\mp\pi)/3]$, $\xi_3=-2
\cos[(\arccos{a})/3]$ and $\xims=(\risco/r_{\rm g})^{1/2}$, where $r_{\rm ms}$ is the radius of the innermost stable circular orbit [ISCO, see @bpt72][^2]. The hardening factor $f_{\rm col}$ is adopted to shift the energy of the thermal photons emerging from the disk in order to account (in a simplified way) for the effects of scatterings they undergo with disk particles [see @dov+08; @dea19]. We also assumed no-torque at the inner edge of the disk, which is taken as coincident with the ISCO.
Photons emitted from the disk are expected to be linearly polarized essentially due to scatterings that occur onto the particles which compose the disk. In this respect, we assume that the photon polarization states follow the Chandrasekhar profile [see e.g. @chan60]; this amounts to consider a pure-electron, scattering dominated atmospheric layer that covers the disk surface. Symmetry considerations lead to two possible polarization states, with the polarization vector either parallel or perpendicular to the projection of the disk symmetry axis in the plane of the sky. In particular, in the hypothesis of no absorption in the atmosphere, polarization is perpendicular to the axis if the optical depth is large ($\tau>1$), while it is parallel to the axis for smaller values of $\tau$ [see e.g. @dov+08 and references therein].
Photons propagating in the space-time around a BH experience general relativistic effects. More in detail, photons emitted close to a BH are redshifted due to the strong gravitational field, and their trajectory follows null geodesics, deviating from straight lines. As a consequence, the paths of photons emitted from regions of the disk closer to the central BH can be bent by its gravitational field. These photons may still reach the observer at infinity (direct radiation), but part of them can return back to the disk surface and interact with the disk material before eventually arriving at infinity (returning radiation); this depends in general on the emission point on the disk and on the emission direction.
In addition to the photon energy and trajectory, strong gravity can also influence the polarization state of radiation. In fact, the photon polarization plane should be parallely transported along the curved trajectory, and this results in a rotation of the polarization vector with respect to the direction assumed at the emission [@connst77; @stconn77; @cps80]. For these reasons, the expected polarization fraction $P$ and polarization angle $\chi$ will be modified with respect to those at the emission. In particular, the polarization angle change $\Psi$ is given by,
\[equation:Psi\] &= , &
that can be expressed in terms of the components of the Walker-Penrose constant $\kappa_1$ and $\kappa_2$ [@wp70; @chan83 see also @dov+08 for complete expressions] as
\[equation:XYPsi\] X &= -(-a\_)\_1-\_2 &\
Y &= (-a\_)\_2-\_1. &
In equations (\[equation:XYPsi\]), $\alpha$ and $\beta$ are the impact parameters which identify the $x$ and $y$ axes, respectively, of the observer’s sky reference frame in the plane perpendicular to the line-of-sight, and $\theta_{\obs}$ is the observer’s inclination. Equations (\[equation:XYPsi\]) also show that a further rotation [called the gravitational Faraday rotation, see @ishi+88], occurs only if the central BH is rotating with specific angular momentum $a\neq0$.
Polarization of photons which return to the disk can be also influenced by the interactions they undergo onto disk particles. While previous works reduced their investigation to the simplifying assumption of pure-scattering atmospheres with $100\%$ albedo at the disk surface, [see e.g. @dov+08; @sk09; @kraw12], here we discuss more realistic cases, in which the absorption opacity of the disk surface layer is not zero, exploring different albedo prescriptions. We finally discuss the effects of these new assumptions on the spectral and polarization properties of the emerging radiation.
Numerical implementation {#section:numericalimplementation}
========================
{width="17.5cm"}
{width="17.5cm"}
{width="17.5cm"}
For our calculations we used the [kyn]{} package [@dov04; @dov+04a; @dov+04b; @dov+04c], which includes a set of different emission models built-in into [xspec]{}. The code exploits a fully relativistic, ray-tracing technique based on an observer-to-emitter approach. As photons emitted from the disk are assumed to follow a (multicolor) blackbody distribution, we resort to the model [kynbb]{}, which provides the spectral and polarization properties of radiation in the case of blackbody seed photons, following a Novikov-Thorne temperature profile with color correction (see section \[section:themodel\]). However, since in its original version this model did not account for returning radiation, the first part of the present work consisted in expanding [kyn]{}, adding a specific routine to include the contributions of returning photons to spectra and polarization observables.
In order to briefly summarize how the code works, we remind here in broad terms the main features of [ kyn]{} in dealing with the direct radiation case [we address the reader to @dov+08 for a more in-depth view], before entering into details about the returning radiation section.
Direct radiation {#subsec:direct}
----------------
The disk surface is sampled by a $(r,\phi)$ grid with $N_{\rm r}\times N_\phi$ points, where $r$ is the radial distance from the central BH and $\phi$ the azimuth with respect to a reference direction in the plane perpendicular to the disk axis. Once the observer inclination $\theta_{\obs}$ with respect to the disk normal is determined, the code traces back all the possible null geodesics which connect the observer to different points on the disk, followed by direct photons.
For each emission point of the disk surface grid, all the main quantities concerning the radiative transport are then provided in terms of photon number. In this respect, the photon flux $\Delta
f_{\obs}$ observed at infinity in the energy bin $\langle E,E+\Delta E\rangle$ per unit solid angle can be written as
\[equation:Deltafo\] f\_ &= \_\^ rr\_[’]{}\^[’+’]{} \_[E/g]{}\^[(E+E)/g]{}Gf\_E\_, &
where the subscript ‘loc’ refers to local quantities, $\rin$ ($\rout$) is the inner (outer) radius of the disk and $f_\loc$ is the local, energy-dependent photon number flux [see @dov+08 for further details]. The boundaries $\phi'$ and $\Delta\phi'$ of the azimuthal integration domain can be arbitrarily chosen in input (for integration over the entire disk surface it is $\phi'=0$ and $\Delta\phi'=2\pi$), as well as the values $E_{\loc}^{\rm min}$ and $E_{\loc}^{\rm max}$ which mark the range of variation of the local energy. Also $\rin$ and $\rout$ can be chosen as code inputs; in particular, the inner edge of the disk can be selected as coincident, larger or smaller than the innermost stable circular orbit. In the latter case, particles in the inner part of the disk are considered in free-fall towards the central BH, with the same energy and angular momentum they had at the ISCO. In the following, however, we assume $\rin=\rms$.
As mentioned above, emitted photons are assumed to be polarized by electron scatterings which occur at the disk surface. In particular, in the diffusion limit ($\tau\gg 1$) the intrinsic polarization properties are given following the analytical expressions developed by @chan60 for a geometrically-thin, optically-thick atmosphere with infinite optical depth. On the other hand, we also exploit the capability of the [kyn]{} package to explore configurations characterized by finite optical depths. In these cases, the intrinsic polarization pattern is numerically evaluated using the Monte Carlo code [stokes]{}, firstly developed by @gg07 [see also @mar18 and references therein for subsequent updates]. It has been possible to verify a posteriori that all the configurations with $\tau\ga 5$ shall be regarded as equivalent to the $\tau=\infty$ case [see Figure \[figure:varitau\]; see also @dov+08].
The code then calculates the local, energy-dependent Stokes parameters[^3] $\boldsymbol{s}_{\loc}^\dir=[i_\loc^\dir,q_\loc^\dir,
u_\loc^\dir]$ and, once selected the polar angles $\theta$ and $\varphi$ the photon emission direction makes with the disk normal, it computes the integrated (energy-dependent) Stokes parameters at the observer as
\[equation:integratedstokes\] i\_&=Si\_\^(r,) G &\
q\_&=S\[q\_\^(r,)(2) -u\_\^(r,)(2)\]G &\
u\_&=S\[u\_\^(r,)(2) +q\_\^(r,)(2)\]G. &
In equations (\[equation:integratedstokes\]), $\Psi$ is the change in polarization angle (see equation \[equation:Psi\]) which accounts for the general relativistic effects that the photon polarization plane experiences as they propagate along each geodesic which connects the emission points to the observer. On the other hand, the transfer function $G=g^2l\cos
\theta$, where $g=E_\obs/E_\loc$ is the energy shift and $l$ the lensing factor (i.e. the ratio between the flux tube cross sections at the observer and at the disk), accounts for the effects of strong gravity on the photon energies and directions along the same trajectories [see @dov04; @dov+08 for more details]. Finally, $\der S=r{\rm d}r{\rm d}\phi$ represents the surface integration element. As for equation (\[equation:Deltafo\]), integration is extended over the radial range $\rin<r
<\rout$ and the azimuthal range $\phi'<\phi<\phi'+\Delta
\phi'$. Polarization observables, i.e. the polarization degree $P$ and angle $\chi$, are eventually obtained as
\[equation:polarizationobservables\] P &= &\
&= (), &
where $i$, $q$ and $u$ should be substituted with the expressions given in equations (\[equation:integratedstokes\]).
Returning radiation {#subsec:returning}
-------------------
In order to include the contributions of returning radiation inside [kyn]{}, we use the [c++]{} code [selfirr]{}, based on the ray-tracing [sim5]{} package [@bur17], that computes all the possible null geodesics connecting two different points on the disk surface, along which returning photons move.
Returning photons are considered to collide with the disk along a general direction $(\bar{\theta}_{\rm i},\bar{\varphi}
_{\rm i})$, with $\bar{\theta}_{\rm i}$ and $\bar{\varphi}_{\rm i}$ the polar angles with respect to the disk normal. The disk surface is therefore divided into $\bar{N}_{\rm r}$ incidence patches, each characterized by the radial distance $\bar{r}_{\rm i}$ of their centers from the BH, while all the possible incidence directions are in turn sampled through a discrete $\bar{N}_\theta
\times\bar{N}_\varphi$ angular mesh. An orthonormal tetrad $e_{(a)}^\mu$ is then attached to the disk fluid at each radius, following Appendix A.2 of @zdb19; in this way, in the tetrad frame comoving with the disk fluid, the wave vector associated to each returning photon can be written as
k\^[(a)]{}&= {1, , , } &
or, by switching to the Boyer-Lindquist coordinate frame, as
k\^&= e\^\_[(a)]{} k\^[(a)]{}. &
Following @car68 and @lnm05, the code exploits $k^\mu$ to evaluate the constants of motion which characterize each photon and determine whether the photon trajectory actually connects the incidence point to another point of the disk surface or not. If yes, the code solves the geodesic equation for the radius $\bar{r}_{\rm e}$ of the point at which the photon was emitted from the disk and calculate the angles $\thetae$ and $\varphie$ which identify the emission direction with respect to the disk normal [see @lnm05][^4]. This also allows to compute the value of the energy shift
|[g]{}&== &
which accounts for general relativistic effects along each returning geodesic, with $U_{\rm i}^\mu$ ($U_{\rm e}^\mu$) the four-velocity of the disk fluid at the incidence (emission) point[^5]. The angle $\bar{\Psi}(\bar{r}_{\rm i},
\bar{\theta}_{\rm i},\bar{\varphi}_{\rm i})$ by which the photon polarization plane is rotated while returning to the disk is eventually provided. This is done again by evaluating the Walker-Penrose constant (as mentioned in section \[section:themodel\]), following equations B46–B47 of @lnm09.
The code returns in output a fits file to be read by [kyn]{}. This contains, for each value of $\bar{r}_{\rm i}$, the values of the incidence angles $(\bar{\theta}_{\rm i},\bar{\varphi}_
{\rm i})$, the radial distance $\bar{r}_{\rm e}$ of the starting point and the emission angles $(\bar{\theta}_{\rm e},\bar{\varphi}
_{\rm e})$, the energy shift $\bar{g}$, the solid angle $\Delta\bar{\Omega}_{\rm
i}$ of the pixel with incidence angles $\bar{\theta}_{\rm i}$ and $\bar{\varphi}_{\rm i}$ and the change in polarization angle $\bar{\Psi}$. Input parameters of each [selfirr]{} run are, instead, the specific BH spin $a$, the disk outer radius[^6] $\rout$ and the number of points $\bar{N}_{\rm r}$, $\bar{N}_\theta$ and $\bar{N}_\varphi$ of the different discrete grids introduced above. For the sake of convenience, we chose $\rout$ as coincident to the disk outer radius set in the calculations of the direct radiation contributions (see section §\[subsec:direct\]), much in the same way as the numbers of radial grid points $\bar{N}_{\rm r}$ and $N_{\rm
r}$. This ensures that the radial grids which sample the disk surface in the two codes [kyn]{} and [selfirr]{} are the same, so that the contributions of direct and returning radiation can be simply summed together at each point of this unique surface grid without any additional numerical manipulation (see equation \[equation:sumdirret\]).
As in the case of the direct radiation, the Stokes parameters $\boldsymbol{\bar{s}}_{\rm e}=[\bar{i}_{\rm e},\bar{q}_
{\rm e},\bar{u}_{\rm e}]$ of returning photons at their emission are given following the Chandrasekhar’s ([-@chan60]) formulae or, alternatively, using the tables obtained from the Monte Carlo code [stokes]{} (see §\[subsec:direct\]), according to their emission radius $\bar{r}_{\rm e}$ and direction $(\bar{\theta}_{\rm e},\bar{\varphi}_{\rm e})$. Returning photons are then reflected at the disk surface. In order to evaluate the Stokes vectors $\boldsymbol{\bar{s}}
_\refl(P_\refl,\chi_\refl)=[\bar{i}_\refl,\bar{q}_\refl,
\bar{u}_\refl]$, where $P_\refl$ and $\chi_\refl$ denote the polarization degree and angle after reflection, we use the Chandrasekhar’s ([-@chan60]) formulae for diffuse reflection. First, the code computes the Stokes parameters for three distinct states of polarization, corresponding to unpolarized light ($P_\refl=0$) and fully polarized radiation ($P_\refl=1$) with $\chi_\refl=0$ and $45^\circ$, respectively (see Appendix \[appendix:drformulae\] for more details). Then it reconstructs the Stokes vector for a generic state of polarization through the decomposition
\[equation:combinationstokesvector\] \_(P\_,&\_)=\_(0,-) &\
&+P\_[e]{} {\[\_(1,0)-\_(0,-)\] &\
&+\[\_(1,/4)-\_ (0,-)\]}, &
which follows from the definition (\[equation:polarizationobservables\]) of $P$ and $\chi$ in terms of the Stokes parameters, with $P_{\rm e}$ and $\chi_{\rm e}$ the polarization degree and angle at the emission point.
All the contributions coming from the different incidence directions at each incidence point are finally summed together, obtaining the contribution to the (energy-dependent) local Stokes parameters for returning photons,
\[equation:localstokesret\] i\_\^(|[r]{}\_[i]{})&=\_[|\_[i]{},|\_[i]{}]{} |[i]{}\_(|[r]{}\_[i]{},|\_[i]{},|\_[i]{}) |[g]{}\^2(|[r]{}\_[i]{},|\_[i]{},|\_[i]{})|\_[i]{}|\_[i]{} &\
q\_\^(|[r]{}\_[i]{})&=\_[|\_[i]{},|\_[i]{}]{} |[q]{}\_(|[r]{}\_[i]{},|\_[i]{},|\_[i]{}) |[g]{}\^2(|[r]{}\_[i]{},|\_[i]{},|\_[i]{})|\_[i]{}|\_[i]{} &\
u\_\^(|[r]{}\_[i]{})&=\_[|\_[i]{},|\_[i]{}]{} |[u]{}\_(|[r]{}\_[i]{},|\_[i]{},|\_[i]{}) |[g]{}\^2(|[r]{}\_[i]{},|\_[i]{},|\_[i]{})|\_[i]{}|\_[i]{}, &
where $\bar{\mu}_{\rm i}=\cos{\bar{\theta}_{\rm i}}$. The integrated Stokes parameters at the observer are computed following the same procedure described in section \[subsec:direct\] for direct radiation; in particular, equations (\[equation:integratedstokes\]) become,
\[equation:integratedstokestotal\] i\_&=Si\_(r,) G &\
q\_&=S\[q\_(r,)(2) -u\_(r,)(2)\]G &\
u\_&=S\[u\_(r,)(2) +q\_(r,)(2)\]G, &
where, in this case[^7],
\[equation:sumdirret\] i\_(r,)&=i\_\^(r,)+i\_\^(r) &\
q\_(r,)&=q\_\^(r,)+q\_\^(r) &\
u\_(r,)&=u\_\^(r,)+u\_\^(r). &
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The output of a typical [kyn]{} run consists in a table containing the values of the integrated Stokes parameters $\boldsymbol{s}_{\obs}=[i_{\obs},q_{\obs},u_{\obs}]$ as functions of the photon energy. This also allows to obtain the energy-dependent polarization observables $P_{\obs}$ and $\chi_{\obs}$, by substituting equations (\[equation:integratedstokestotal\]) into equations (\[equation:polarizationobservables\]). Alternatively, spectra and polarization properties can be also obtained for either direct or returning radiation contributions separately, by omitting in equations (\[equation:sumdirret\]) the returning or the direct terms, respectively.
Results {#section:results}
=======
With the purpose of an immediate comparison of our results with previous works [in particular @sk09; @kraw12], and in order to ensure that our code is well implemented, we initially assume a 100% albedo prescription, i.e. all the photons which return to the disk are considered to be reflected towards infinity. As an extension of the above-mentioned works, we also obtain results for finite optical depths of the pure-electron disk atmosphere. Finally, we discuss how the spectral and polarization properties of the collected radiation can be modified assuming more realistic albedo profiles.
Case of 100% disk albedo {#subsection:100albedo}
------------------------
We firstly remark that, contrary to our ray-tracing code, which is based on an observer-to-emitter approach, those exploited by @sk09 and @kraw12, to which we refer in the following as benchmarks, rely on an emitter-to-observer paradigm [see @sk13 for more details]. In the light of this, a comparison with their results becomes even more significant, since it also allows to check if our code gives similar expectations to those already presented in literature and obtained using different techniques.
In order to make our simulations comparable with those presented by both @sk09 and @kraw12, we assumed a central BH with mass $M=10\,M_\odot$ and accreting material at a rate $\dot{M}\approx10\%$ of the Eddington limit $\dot{M}_{\rm Edd}$ (correctly accounting for the change in efficiency for different values of the BH spin $a$). Moreover, we chose a constant hardening factor $f_{\rm col}=1.8$. The energy domain is characterized by a 200-point grid between $0.01$ and $50$ keV, while the disk surface has been sampled through a grid characterized by $N_{\rm r}=500$ radial bins, logaritmically-spaced between $\rms$ and $\rout=100\,\rg$, and $N_\phi=180$ azimuthal zones. We then associated to each point $\bar{N}
_\theta\times\bar{N}_\phi=100\times100$ incidence directions for what concerns returning radiation, i.e. $10^4$ rays are traced per radius and azimuth[^8]. Finally, the polarization properties of photons at their emission are derived using Chandrasekhar’s ([-@chan60]) formulae, considering an infinite optical depth $\tau$ for the atmospheric layer that is assumed to cover the disk surface.
Figures \[figure:i75\]–\[figure:i45\] show the behaviors of spectra (energy flux of the Stokes parameter $i$) and polarization observables ($P_\obs$ and $\chi_\obs$) as functions of the photon energy at the observer, considering the line-of-sight inclined by $75^\circ$, $60^\circ$ and $45^\circ$ with respect to the disk symmetry axis and for three different values of the BH spin: $a=0$, $0.9$ and $0.998$. In all the plots the contributions of direct and returning radiation alone (dotted and dashed lines, respectively) can be distinguished from the joint contribution (solid lines) obtained by summing the two, as illustrated in §\[subsec:returning\].
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As a quick comparison with the plots reported in their Figures 4–6 clearly shows[^9], our results turn out to be in general compatible with those presented by @sk09. In particular, as expected for large optical depths [see e.g. @dov+08], direct radiation turns out to be polarized perpendicularly to the disk symmetry axis at lower energies, i.e. the polarization angle associated to the direct radiation component $\chi^\dir_\obs$ is about $90^
\circ$, while it slowly decreases at higher energies ($\ga 2$ keV) under the effect of the polarization plane rotation (see section \[section:themodel\]). This can be explained looking at the behavior of the disk temperature profile as a function of the radial distance from the center (see e.g. Figure \[figure:albedovsEvsR\]). Low-energy photons are emitted from the external regions of the disk, where the temperature is lower and strong gravity is less important, whereas high-energy ones are emitted closer to the BH, where the temperature is higher and photon polarization is mostly affected by general relativistic effects. On the other hand, returning photons appear to be mostly polarized parallel to the disk axis ($\chi^\ret_\obs=
0^\circ$), although also in this case the polarization angle slightly declines above $10$ keV due to general relativistic effects (even if by a smaller amount than in the direct radiation case). Looking at the joint contribution (direct $+$ returning radiation), a transition between the two regimes can be observed. In particular, the total polarization angle $\chi
_\obs$ follows the curve of direct radiation alone as long as the fraction of returning photons becomes comparable to that of direct ones (see the spectra in the top rows), while it swings by $90^\circ$ at higher frequencies. The energy at which this transition occurs turns out to be smaller the larger the BH spin, that is mainly due to the choice of considering $\rin$ as coincident to $\rms$. In fact, the innermost stable circular orbit lies at a larger distance from the center for a non-rotating BH, while it approaches the horizon as $a$ increases. As a consequence, for $a=0$ returning photons start to dominate only at very high energies ($\ga 10$ keV), once the spectrum of direct photons has sufficiently declined, while for $a=0.9$ and $0.998$ the transition occurs already at $E_\obs\ga1$ or $2$ keV, since more high-energy returning photons populate the spectral tail at those energies.
The trend of the polarization degree can be explained in a rather similar way. Having assumed that the radiative transfer in the atmospheric layer which covers the disk surface is dominated by (Thomson) electron scatterings with $\tau\rightarrow\infty$, direct radiation turns out to be quite mildly polarized, with $0.3\%\leq P^\dir_\obs\leq3\%$. Returning radiation, instead, is much more polarized, with in general $8\%\leq P^\ret_\obs\leq20\%$. As in the polarization angle plots, a transition between the direct and returning radiation regimes can be observed when contributions are summed together. While the $P^{\rm tot}_\obs$ essentially follows the behavior of direct radiation below $\sim 1$ keV, it attains a minimum in correspondence of the polarization angle swing described above, and then it approaches the returning radiation trend at higher energies.
For the sake of a further comparison with works previously published in literature, we also produced supplementary plots (see Figure \[figure:krawplot\]) for the energy-dependent polarization degree and angle, to be compared with those reported by @kraw12, who showed expectations for different kinds of space-time metrics. Also in this case, limiting our analysis to the case of a Kerr BH (see his Figure 5[^10]), an overall good agreement should be noted between the different simulations performed for the polarization observables behaviors, obtained for $a=0$, $0.5$, $0.9$ and $0.99$ and $i=75
^\circ$.
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Some differences with respect to the results reported in @sk09, however, are present when the case of $a=0.9$ is considered. This is already visible in the middle column of Figures \[figure:i60\] and \[figure:i45\], where a second minimum in the (joint) polarization degree behavior appears in addition to that just discussed above, related to the transition from the direct to the returning radiation regimes. This second minimum occurs in connection with a steep decrease in the polarization angle of the returning radiation component, at an energy $\sim 20$ keV. To better investigate this feature, we report in Figure \[figure:feature\] the same plots (for $a=0.9$ and $i=45^\circ,\,60^\circ$), but extending the energy range on the horizontal axis up to $50$ keV. As it can be clearly seen in the right panels, for these values of the input parameters the polarization direction of returning photons seems change from parallel ($\chi_{\rm obs}^
{\rm ret}=0^\circ$) to perpendicular ($\chi_{\rm
obs}^{\rm ret}=-90^\circ$) to the disk symmetry axis at very high energies. We checked a posteriori that this behavior is still present also increasing the resolution of the energy, radial and angular grids; this led us to the conclusion that this particular feature may not be a numerical artifact.
In order to understand the physical mechanism responsible for this behavior, we looked in more details on the values of the polarization degree and angle of the reflected radiation as functions of the position on the disk surface. We found that an additional critical point [as discussed in @dov+08; @dov+11] appears close to the BH for the largest spin values and the highest inclinations, around which the polarization angle attains all possible values. The existence of this critical point is due to the complex dependence of Chandrasekhar’s ([-@chan60]) diffuse reflection formulae (in the multi-scattering approximation) on the incidence and emission scattering angles, as well as on the photon polarization angle at the reflection point. In most cases, the rather small region around the critical point does not affect sizeably the overall Stokes parameter distributions. High-energy photons come from a well-defined, “hot” region of the disk close to the ISCO where the temperature is higher. The Doppler shift has to be important, which means that it is on the approaching side of the disk, but at the same time the gravitational redshift is not too large, which means that it is not too close to the BH horizon. If the critical point lies far away from this peculiar region, one does not see any abrupt change in the polarization properties at high energies, since the Stokes parameters do not change too much in the vicinity of this zone. The situation is different when the critical point is close to this hot region. In fact, while the Stokes parameters at low-energies are integrated over a large area of the disk surface, those at high energies come from a localized region and this results in different polarization patterns. In particular, in our case it turns out that the critical point is close enough to the hot region only for not too high spin values ($a=0.9$). For $a\simeq0$ the critical point does not even exist (i.e. it would lie below the ISCO), while it moves closer to the horizon, and on the other side of the BH wrt the hot region, for very high spins ($a=0.998$).
However, as it can be noted from the spectra reported in the left panels of Figure \[figure:feature\], at such high energies ($\ga 20$ keV) the photon flux is dramatically smaller than at the spectral peak (by almost $5$ orders of magnitude). This certainly reduces the overall importance of catching such a behavior in the polarization observable trends, since polarimetric techniques (especially at X-ray energies) would suffer for the extremely low number of photons expected.
{width="17.5cm"}
In order to better understand how returning radiation influences the polarization properties of collected photons at infinity and to disentangle its effects from those of direct radiation, we performed analogous simulations assuming that photons are emitted from the disk as unpolarized (i.e. we artificially imposed $P^\dir_\loc=0$). Illustrative plots are shown in Figure \[figure:directoff\] for $a=0$, $0.9$ and $0.998$ and $i=75^\circ$ (red lines), while the corresponding ones, i.e. for direct radiation polarized according to Chandrasekhar’s ([-@chan60]) formulae (see Figure \[figure:i75\]), are reported in blue for ease of comparison. As it can be easily observed in the polarization fraction plots (middle row), returning photons are practically polarized at the same degree in the two cases, with only slight differences $\la1\%$ (which are larger for smaller BH spins). This shows that the polarization properties of returning radiation do not actually depend on the intrinsic polarization state of photons. Rather, polarization of returning photons rises essentially upon reflection at the disk surface (see Appendix \[appendix:drformulae\]). Moreover, assuming that photons are unpolarized at the emission, the collected radiation turns out to be polarized along the disk axis over the entire energy range, with no transitions (red solid lines in the bottom row of Figure \[figure:directoff\]). This allows the total polarization degree to monotonically increase with the photon energy (red solid lines in the middle row), up to reach a modest degree of polarization at sufficiently high energies which can also exceed that expected when direct photon polarization is properly accounted for.
Exploring different optical depths {#subsection:differenttau}
----------------------------------
\[section:differenttau\] While the results discussed in the previous subsection have been obtained assuming an infinite optical depth $\tau$ for the scattering atmosphere on the top of the blackbody-emitting disk, here we investigate how the spectral and polarization properties of the collected radiation can be influenced by changing $\tau$. We remind, in this regard, that special tables generated through the Monte Carlo code [stokes]{} are used to evaluate the photon Stokes parameters when finite values of $\tau$ are considered, at variance with the case of infinite $\tau$, for which the photon polarization state can be obtained using the analytical formulae by @chan60. Figure \[figure:varitau\] shows the behaviors of spectra and polarization observables at infinity, plotted as functions of the photon energy, for a maximally-rotating BH ($a=0.998$)[^11] and different inclinations of the observer’s line-of-sight. Results for $\tau=5$, $2$, $1$, $0.5$ and $0.2$ are provided, together with the case of $\tau\rightarrow\infty$ (black lines), already discussed in §\[subsection:100albedo\].
{width="17.5cm"}
{width="17.5cm"}
{width="17.5cm"}
Spectra (top row) turn out to be quite unaffected by changing the optical depth; an appreciable, albeit small, spread is visible only in the case of $i=75^\circ$, mainly due to the different emission directionality of the primary emission. However, the most considerable changes appear in the polarization observables of the direct radiation components (see dotted lines in the middle and bottom rows). If on one hand both the polarization degree and angle behaviors for $\tau=5$ (purple) resemble those obtained for an infinite optical depth (black), on the other hand quite different trends are displayed for the other cases referred. More in detail, the polarization angle (bottom row) turns out to assume a value close to $0$ over the entire energy range for $\tau\la2$. This can be explained by the fact, already noticed by @dov+08 [see their Figure 1], that a transition occurs at $\tau\sim2$ in the orientation of the polarization vectors for direct photons: polarization is perpendicular to the projected disk symmetry axis ($\chi^\dir_\obs=90^\circ$) at high values of $\tau$, while it becomes parallel ($\chi^\dir_\obs=0^\circ$, as for returning radiation) at lower optical depths. An overview of the three plots, reported in the bottom row of Figure \[figure:varitau\], shows that this transition also depends on the inclination angle. In fact, focussing on the case of $\tau=2$ (cyan), $\chi^\dir_\obs\sim 0^\circ$ for $i=45^\circ$ and $60^\circ$ at low energies (it decreases towards negative values at higher energies due to general relativistic effects, see § \[subsection:100albedo\]), while it becomes significantly larger than $0$ only for $i=75^
\circ$. By contrast, the polarization angle of returning radiation only (dashed lines) remains basically unchanged with respect to the case of $\tau\rightarrow\infty$ also when a finite optical depth is considered. This naturally follows from the fact that the polarization properties of returning photons barely depend on the mechanisms that polarize photons at their emission, being essentially determined by reflection (as discussed above). As a result, the polarization angle related to the joint contribution (direct $+$ returning radiation, solid lines) shows the typical swing due to the transition between the two regimes (see Figures \[figure:i75\]–\[figure:i45\]) only for $\tau=5$ and $\tau\rightarrow\infty$, while no transition occurs for lower optical depths.
Looking at the polarization fraction plots (middle row) one can observe a behavior with optical depth and inclination angle similar to that just discussed for the polarization angle. In particular, the polarization degree for direct radiation ($P^\dir
_\obs$) at $\tau=2$ and $i=75^\circ$ attains very low values ($<0.1\%$) at low energies, before to increase at higher energies up to a value not much larger than $1\%$. On the contrary, for lower inclination angles ($i=45^\circ$ and $60^\circ$) $P^\dir_\obs$ maintains a value of the order of few precents in the entire energy range. For even smaller values of the optical depth, the polarization fraction of the direct component attains generally higher values, regardless of the observer’s inclination. This is mainly due to the increase in polarization fraction that direct photons undergoes by decreasing $\tau$, as again confirmed by the results discussed in @dov+08. On the other hand, much in the same way as the polarization angle, the polarization degree of returning radiation is quite independent on the variation of optical depth, apart from a discrete increase at low energies ($\sim 2$–$5\%$) by decreasing $\tau$, due essentially to the higher degree of polarization which characterize photons at their emission.
Summing together the contributions of direct and returning radiation, the total polarization fraction turns out to increase in general by decreasing the optical depth, due essentially to the growth in $P^\dir_\obs$ at lower energies. The only exception occurs considering $\tau=2$. In this case the almost unpolarized direct component forces $P^\tot_\obs$ to assume a value even smaller than for $\tau\ga5$ at lower energies, following a trend similar to that followed by the red solid line in the middle-right panel of Figure \[figure:directoff\] (where indeed $P^\dir_\obs$ is forced to be zero).
More realistic albedo prescription {#subsection:albedo}
----------------------------------
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{width="17.5cm"}
A critical simplification we assumed so far in our work is that of considering a constant, $100
\%$ albedo prescription at the disk surface (which implies that returning photons are all reflected towards the observer). Although computing a self-consistent ionization profile for the disk is beyond the scope of this paper (and it will be addressed in a future work), here we tried to relax the constraint on the albedo, at least in a simplified way, with the purpose to convey a sense about the effects that can be produced on spectra and polarization observables when these aspects are properly taken into account.
### Albedo profile {#subsubsec:albedoprofile}
In order to calculate a more realistic albedo profile for the disk surface, we use the version 17.00 of [cloudy]{}, last described by @cloudy, a code to simulate the micro-physical processes that occur in astrophysical clouds, allowing for the prediction of the spectral properties of the radiation field that emerges (or is reflected from) these clouds. More in detail, we exploit the [coronal]{} setup, in which the gas which composes the medium is assumed to be ionized due to mutual collisions. Input parameters of each run are the (constant) gas kynetic temperature $T$ and the total (i.e. ionic, atomic and molecular) hydrogen density $n({\rm H})$. One should also provide to the code a value of the hydrogen column density $N_{\rm H}$ at which calculations are stopped. In this respect, we take in the following $N_{\rm
H}=10^{24}$ cm$^{-2}$, which corresponds to $\tau\sim 1$ for Compton scattering (i.e. the process we are mainly interested for in the disk); this is tantamount to consider the layer in which most of scatterings happen. The output is a text file containing the values of the scattering, absorption and total opacities and the albedo parameter as functions of the energy, for the values of temperature and densities specified in input. For coherence with the results discussed above, we use the @nt73 profile given in equation (\[equation:ntprofile\]) to describe the variation of the temperature with the radial distance from the center. For the density, instead, we used the formulae reported in @co17, which give the local density profile in the inner, middle and outer regions of a general relativistic, standard disk (see Figure \[figure:albedovsEvsR\], bottom row, and Appendix \[appendix:density\] for more details).
The albedo profile is then computed by [cloudy]{} after having specified the values of temperature $T(r)$ and density $\rho(r)$ for each radial patch (with $r$ the radial distance). Results for the energy-dependent albedo profile $A(E_\loc)$ obtained for different radial patches in the cases of $a=0$ (left), $0.9$ (center) and $0.998$ (right) are shown in Figure \[figure:albedoprofilesvaria\]. As it can be clearly seen, in all the cases explored the simplifying assumption of 100% albedo turns out to be a good approximation only at very high energies, i.e. $E_{\rm loc}\approx 10$–$100$ keV. Elsewhere, the albedo significantly deviates from unity (except for some values of $r$ at lower energies), especially in the $0.1$–$10$ keV band, which is indeed the working energy range of the forthcoming X-ray polarimeters like [*IXPE*]{}. Here different line features appear, more or less visible depending on the BH spin and radial distance, such as the clear iron absorption edge which occurs at around $\sim 6$–$7$ keV [see e.g. @yrf98]. Plots in Figure \[figure:albedoprofilesvariedens\] give a more exhaustive view on how the albedo profile depends on the density of the slab in which calculations are performed. In this case the outputs are obtained for $a=0.998$, three different values of the temperature, i.e. those corresponding to $r=2$ (left), $5$ (middle) and $10\,r_{\rm g}$ (right) according to the @nt73 temperature profile, and different values of the total hydrogen density $n({\rm H})$ between $10^{15}$ and $10^{23}$ cm$^{-3}$. The plots show that the dependence of $A(E_\loc)$ on the density is stronger at low energies, where it exhibits an increasing behavior by decreasing $n({\rm H})$. In particular, it attains values close to $0$ at around $0.1$ keV for particle densities in excess of $10^{22}$–$10^{23}$ cm$^{-3}$, especially for lower temperatures (i.e. for larger radial distances, see the right panel). On the other hand, at higher energies ($\ga10$–$20$ keV) the albedo tends to reach the same value ($\approx 1$) in the entire range of densities explored.
The top row of Figure \[figure:albedovsEvsR\] finally shows the [cloudy]{} albedo profile as a function of the radial distance $A(r)$ for the same three values of $a$ discussed in Figure \[figure:albedoprofilesvaria\] and assuming the temperature and density profiles expressed by equations (\[equation:ntprofile\]) and (\[equation:verticaldensity\]), resepctively. The outputs for five different local energies, covering the $1$–$10$ keV band, are shown. Also in this case an overall reduction of the albedo with respect to $100\%$, is shown, with in general a decreasing behavior as a function of the radial distance (with the only exception at $E_\loc\approx 10$ keV, where $A(r)$ is essentially constant at $\approx 0.4$ over the entire radial range considered. A maximum, where the albedo attains a value close to $1$, can be observed at energies $E_\loc\sim 1$ keV as the innermost stable circualr orbit is approached, essentially in correspondence with the peaks of both the temperature and density profiles (see bottom row). This maximum looks rather broadened for energies close to $E_
\loc\approx1$ keV, where the albedo remains at around $100\%$ up to a distance of $20$–$30\,r_{\rm g}$ from the center.
### Results {#subsubsec:includingalbedo}
For coherence with the results discussed previously (see §\[subsection:100albedo\] and \[subsection:differenttau\]), the albedo profiles obtained from [cloudy]{} are firstly interpolated over the energy grid used for [kyn]{} simulations and then stored in different fits files, according to the value of the BH spin. Eventually, returning radiation Stokes parameters are convolved with the correspondent value of the albedo for each energy and radial bin, so that, at each local energy $E_\loc$, it is
\[equation:albedoconvolution\] i\_(r,)&=i\^\_(r,)+i\^\_(r)A(r) &\
q\_(r,)&=q\^\_(r,)+q\^\_(r)A(r) &\
u\_(r,)&=u\^\_(r,)+u\^\_(r)A(r), &
where $i_\loc$, $q_\loc$ and $u_\loc$ are the energy-dependent Stokes parameters defined in §\[subsec:returning\].
To provide an example of how including a more realistic albedo profile can modify the behaviors of spectral and polarization properties of radiation collected from stellar-mass BH accretion disks, we report in Figure \[figure:albedoi75\] (red lines) the results obtained for the same values of the input parameters as in Figure \[figure:i75\], where the albedo was assumed to be $100\%$ for every energy and radial bin (behaviors of Figure \[figure:i75\] are also reported and marked in blue in Figure \[figure:albedoi75\] for ease of comparison). It can be noticed that, although returning photon spectra turn out to be strongly affected by the inclusion of a more complex albedo profile, total spectra are practically unchanged. This follows from the fact that the ratio between the returning and the direct photon numbers is quite small ($\approx10^{-2}$–$10^{-3}$) over the almost entire energy range considered. As noticed in §\[subsection:100albedo\], the only exception occurs at very high energies ($\ga10$ keV), where photons are mostly emitted from regions closer to $\rms$ (see §\[subsection:100albedo\]). However, as shown in Figure \[figure:albedovsEvsR\], for $r\rightarrow\rms$ and $E_\loc\ga 10$ keV the albedo attains values close to $100\%$ at essentially any of the BH spins considered. For this reason, small effects on the spectra are anyway expected also at high values of $E_\obs$. Effects on polarization degree and angle trends are instead more pronounced. This is especially visible for higher BH spins ($a=0.9$ and $a=0.998$), when returning radiation contributions start to be important already at $E_\obs\sim1$ keV. More in details, looking at the polarization angle plots (bottom row), the most important difference with respect to the $100\%$ albedo case concerns the swing which occurs when returning radiation contributions start to be dominant over the direct radiation ones. This appears to be rather broadened and in general shifted towards higher energies when the [cloudy]{} albedo profile is included. This also impacts the behavior of the polarization degree (middle row), with the minimum which is moved as well to higher energies.
In order to better investigate how indeed these particular features (both discussed in §\[subsection:100albedo\]) in the polarization observable plots are modified by considering a more realistic albedo prescription, we report in Figure \[figure:varialbedivarii\] the energy-dependent behaviors of polarization degree and angle as observed at infinity for different albedo profiles: constant $100\%$, $80\%$, $50\%$ and $30\%$ together with that obtained in output from cloudy (see Figure \[figure:albedoprofilesvaria\]). Here the only case of $a=0.998$ is explored, with different observer’s inclinations ($i=45^\circ$, $60^\circ$ and $75^\circ$).While no significant changes occur by changing $i$, it clearly turns out that the effect on the polarization observables of reducing the albedo at the disk surface is mainly that of moving the minimum of the polarization degree and the swing of the polarization angle towards higher energies. This can be easily explained by the fact that convolving an albedo smaller than $1$ to the returning photon Stokes parameters acts in further suppressing the contribution of returning radiation with respect to that of the direct one (see e.g. the top row of Figure \[figure:albedoi75\]). Hence, the energy at which returning radiation starts to dominate over the direct component consequently raises, moving forward the minimum of the polarization degree and the transition in the polarization angle.
{width="17.5cm"}
As well as affecting returning radiation, the absorption caused by the ionization of the disk material can be reasonably expected to change also the polarization properties of the emerging radiation. Remarking once more that a complete treatment of ionization in the disk is outside the scope of this paper, we resort to artificially reduce the polarization degree of direct photons in order to mimic this possible effect. To this aim we performed a number of simulations for which the direct radiation polarization degree ranges from $P^\dir
_\loc=P_{\rm Chandr}$ (i.e. following Chandrasekhar’s, [-@chan60], formulae) down to $0$ (i.e. unpolarized emerging light). Results, obtained for the same values of parameters assumed in Figure \[figure:albedoi75\], are illustrated in Figure \[figure:albedoplotdiffP\], which shows the energy-dependent polarization observables as observed at infinity. As expected, the observed polarization degree turns out to decrease, in general, by decreasing the polarization fraction of the emerging radiation. However, when photons emitted from the disk are originally unpolarized, the collected radiation may counter-intuitively result even more polarized than for non-zero intrinsic polarization. This behavior, already discussed in §\[subsection:100albedo\] commenting Figure \[figure:directoff\], can be clearly seen looking at the red curves in the top row of Figure \[figure:albedoplotdiffP\]. An explanation can actually be extracted from the polarization angle plots (bottom row), where, as noticed for those reported in Figures \[figure:albedoi75\] and \[figure:varialbedivarii\], the addition of a non-trivial albedo profile broadens the range in energy over which the polarization angle swing extends. Since, on the other hand, the polarization angle is rather constant when direct radiation is assumed to be unpolarized (so that no transition occurs at all), the correspondent polarization fraction is much less reduced than for the other cases, in which instead the variation of the polarization angle with the energy is more significant.
Discussion and conclusions {#section:discussion}
==========================
In this work we have revisited the problem of the spectral and polarization properties of radiation emitted from stellar-mass BH accretion disks in the soft state, considering the contribution of returning radiation (i.e. photons which are bent by the strong BH gravity to return to the disk before being reflected towards the observer) alongside that of direct radiation (i.e. photons that arrive directly to the observer once emitted from the disk surface). To this aim we first added to the [ kyn]{} package [@dov04] a specific module, exploiting the [c++]{} code [selfirr]{} [based on the ray-tracing [sim5]{} package, see @bur17] to calculate all the possible null geodesics along which photons can travel between two different points on the disk surface (assuming a Kerr space-time, see section \[section:themodel\]). Secondly, we have checked that the results of our simulations were compatible with those discussed in previous works [e.g. @sk09; @kraw12] which already considered returning radiation in their calculations. As widely discussed in section \[subsection:100albedo\], the comparison has revealed an overall good agreement over a large range of input parameters, with only some discrepancies in the case of $a=0.9$, occurring essentially at an energy higher then $20$ keV. We remarked that statistics at such high energies would be definitively too low for the present polarimetry techniques [see e.g. @cos+01; @bell+10] to provide conclusive results.
Using the Monte Carlo code [stokes]{}, we have been able to investigate how spectral and polarization properties are modified by varying the optical depth of the (pure-scattering) atmosphere assumed to cover the disk (see §\[subsection:differenttau\]). We found that the trends of the polarization observables are rather similar to those obtained for an infinite optical depth when $\tau\ga 5$. On the other hand, a significantly higher polarization fraction (even by a factor of $\sim 6$–$10$ at low energies) can be expected when values of $\tau$ smaller than $1$ are considered; a transition between the two regimes occurs at around $\tau\sim2$ [in agreement with the results already discussed by @dov+08]. This certainly changes the expected polarization signature of soft-state BH accretion disks in the $2$–$10$ keV energy range, which will be attained by the next-generation polarimeters like [*IXPE*]{} [@weiss+13]. Moreover, if future polarimeters capable to investigate polarization also at energies $\approx 0.1$–$2$ keV [like [*XPP*]{}, see @kraw+19] will be deployed in the next years, this behavior can be used in principle to obtain information on the optical properties of the medium from which photons have been emitted.
Without entering into details (a more complete treatment of the ionization profile in the disk will be addressed in a future work), we then started to make a more realistic assumption for the disk albedo profile, going beyond the simplified prescription of taking it constant at $100\%$. To this aim we used the code [cloudy]{} [@cloudy], assuming that ionization in the disk material is due essentially to mutual collisions between its particles. The albedo profiles obtained from [cloudy]{} were then convolved with the returning radiation Stokes parameters computed by [kyn]{}. The plots reported in §\[subsubsec:includingalbedo\] offer an illustration of the effects of a more realistic albedo prescription on both spectra and polarization observables. A comparison with the case discussed in section \[subsection:100albedo\] shows that introducing in the calculations a more complicated albedo profile can significantly alter the behavior of polarization degree and angle with respect to the simplifying $100\%$-albedo prescription. This can in particular affect the constraints on BH spin and inclination angle which may be extracted from polarization measurements (see Figure \[figure:varialbedivarii\]).
Finally, we tried to reproduce the possible effects of the disk ionization also on the polarization properties of the emerging radiation. As a first attempt (which will be also investigated more in depth in a future work), we resorted to reduce the polarization degree assigned to the direct radiation component in our simulations, starting from the pure-scattering polarization pattern predicted by @chan60 up to assuming an unpolarized radiation (see Figure \[figure:albedoplotdiffP\]). Such effects turned out to be indeed quite important, especially in the case of weakly-polarized direct photons, for which radiation collected at infinity may result even more polarized with respect to the case of Chandrasekhar-like intrinsic polarization.
To conclude, on the wave of previous works [see e.g. @dov+08; @sk09; @kraw12; @sk13], we confirm that X-ray polarization measurements can be crucial in extending our knowledge about stellar-mass BH accretion disks in the soft state. However, when the optical structure of the disk is considered in more detail (e.g. taking the surface optical depth and the disk ionization as free parameters of the problem), the simple scenario depicted under the assumptions of $\tau=1$ and $100\%$ albedo may be not the right description. However, we point out that there are several effects, we did not consider in the present work, which can somehow mitigate the degeneracy introduced by considering absorption in the disk material. For example, the contributions due to magnetic pressure in determining the vertical structure of the disk or the photoionization due to radiation coming from an external corona, may significantly increase the ionization fraction and therefore increase the albedo as well. Moreover, deeper investigations, which are outside the scope of the present paper, are requested in order to provide a more realistic picture of these kind of sources through the joint effort of spectroscopy and X-ray polarimetry. This involves a self-consistent treatment of ionization in the disk material, a more general prescription for the vertical structure of the disk (see Appendix \[appendix:density\]) and the inclusion of absorption effects in the radiative transfer calculations of polarized thermal photons (i.e. not only for the reflected ones). We are planning to address these issues in future works. The sensitive functional dependence of the polarization observables (seen as functions of the photon energy) on the physical state of the accretion disk should allow us to set more stringent constraints on the models of the accretion medium along with the effects of General Relativity. This makes it possible in future, also exploiting the capabilities of instruments like [*IXPE*]{}, to reduce the inherent degeneracies of these models and to measure the parameters, including the BH spin.
Acknowledgments {#acknowledgments .unnumbered}
===============
We thank the anonymous referee for his/her constructive comments which helped in improving a previous version of this paper. RT thanks Roberto Turolla for some helpful discussions. RT, SB and GM acknowledge financial support from the Italian Space Agency (grant 2017-12-H.0). MD, MB and VK aknowledge the support by the project RVO:67985815 and the project LTC18058. WZ would like to thank GACR for the support from the project 18-00533S.
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Diffuse reflection formulae {#appendix:drformulae}
===========================
Chandrasekhar’s ([-@chan60]) diffuse reflection law can be expressed as
\[equation:diffreflgen\] (
[c]{} I\_[l]{}\
I\_[r]{}\
U
)&= (,;,)(
[c]{} F\_[l]{}\
F\_[r]{}\
F\_[U]{}
), &
where $I_{\rm l}$, $I_{\rm r}$ and $U$ are the (number) intensities which characterize the radiation field ($l$ and $r$ refer to two mutually orthogonal directions, in the plane made by the disk symmetry axis and the observer’s line-of-sight and perpendicular to this plane, respectively), $F_{\rm l}$, $F_{\rm r}$ and $F_{\rm U}$ are the correspondent (number) fluxes, $\mu=\cos\theta$ ($\muz=\cos\bar{\theta}_{\rm
i}$) is the cosine of the emission (incidence) angle that the propagation direction makes with the disk symmetry axis and
\[equation:Qmatrix\] &=(
[ccc]{} 1 & 0 & 0\
0 & 1 & 0\
0 & 0 & 2
). &
The elements of the matrix
\[equation:Smatrix\] (,;,)&= (
[ccc]{} S\_[11]{} & S\_[12]{} & S\_[13]{}\
S\_[21]{} & S\_[22]{} & S\_[23]{}\
S\_[31]{} & S\_[32]{} & S\_[33]{}
) &
are given by the following expressions:
\[equation:S11\] S\_[11]{}&=()()+2()() &\
&-4\^[1/2]{}H\^[(1)]{}()H\^[(1)]{}() (-) &\
&+\^2\^2H\^[(2)]{}()H\^[(2)]{}(); &
\[equation:S12\] S\_[12]{}&=()()+2()() &\
&-\^2H\^[(2)]{}()H\^[(2)]{}(); &
\[equation:S13\] S\_[13]{}&=2\^[1/2]{}H\^[(1)]{}()H\^[(1)]{}() (-) &\
&-\^2H\^[(2)]{}()H\^[(2)]{}(); &
\[equation:S21\] S\_[21]{}&=()()+2()() &\
&-\^2H\^[(2)]{}()H\^[(2)]{}(); &
\[equation:S22\] S\_[22]{}&=()()+2()() &\
&+H\^[(2)]{}()H\^[(2)]{}(); &
\[equation:S23\] S\_[23]{}&=H\^[(2)]{}()H\^[(2)]{}(); &
\[equation:S31\] S\_[31]{}&=2\^[1/2]{}H\^[(1)]{}()H\^[(1)]{}() (-) &\
&-\^2H\^[(2)]{}()H\^[(2)]{}(); &
\[equation:S32\] S\_[32]{}&=H\^[(2)]{}()H\^[(2)]{}(); &
\[equation:S33\] S\_[33]{}&=\[(1-\^2)(1-\^2)\]\^[1/2]{}H\^[(1)]{}()H\^[(1)]{}() (-) &\
&-H\^[(2)]{}()H\^[(2)]{}(). &
The values that the special functions $\psi(\mu)$, $\phi
(\mu)$, $\chi(\mu)$, $\zeta(\mu)$, $H^{(1)}(\mu)$ and $H^{(2)}(\mu)$ take on a descrete grid of $\mu$ are reported in Table XXV of @chan60.
Stokes parameters can be obtained from $I_{\rm l}$, $I_{\rm r}$ and $U$ given in equation (\[equation:diffreflgen\]) through
\[equation:defiuq\] |[i]{}\_&=I\_[l]{}+I\_[r]{} &\
|[q]{}\_&=I\_[l]{}-I\_[r]{} &\
|[u]{}\_&=U, &
while the components of the Stokes vectors $\boldsymbol{
\bar{s}}_\refl(0,-)$, $\boldsymbol{\bar{s}}_\refl(1,0)$ and $\boldsymbol{\bar{s}}_\refl(1,\pi/4)$ used in equation (\[equation:combinationstokesvector\]) can be obtained from equation (\[equation:diffreflgen\]) by placing $F_{\rm l}=F_{\rm r}=f_\loc/2$, $F_{\rm U}=0$ for unpolarized light, $F_{\rm l}=f_\loc$, $F_{\rm r}=F_{\rm
U}=0$ for vertically-polarized light and $F_{\rm l}=F_{\rm
r}=f_\loc/2$, $F_{\rm U}=f_\loc$ for $45^\circ$-polarized light.
Disk density profile {#appendix:density}
====================
In order to calculate coherently the albedo profile of the disk with [cloudy]{}, we adopted the density profile given by @co17, who revised the standard disk local structure formulae originally discussed by @nt73 [see also @pt74 and @af13] for both stellar-mass and supermassive BHs. For the sake of a better readability, we reported in the following the main expressions we used in our calculations. The disk is divided into three main regions, according to what mechanism dominates the transfer of radiation in the disk material. In the inner (or edge) region, where it holds
&=(2.610\^[-5]{})\^[-1/4]{}M\_\*\^[7/4]{}\_\*\^[-2]{} &\
& x\^[29/4]{}\^[9/4]{}\^[-1/4]{}\^[5/4]{}\^[-2]{}1, &
\[equation:conditioninn\] &=(2.210\^[-8]{})\^[-1/8]{}M\_\*\^[15/8]{}\_\*\^[-2]{} &\
& x\^[61/8]{}\^[17/8]{}\^[-1/8]{}\^[9/8]{}\^[-2]{}1, &
with $p_{\rm gas}$ ($p_{\rm rad}$) the gas (radiation) pressure and $\kappa_{\rm ff}$ ($\kappa_{\rm es}$) the free-free (scattering) opacity, the (equatorial) hydrogen density $n_0(\rm H)$ is given by
\[equation:ninn\] n\_0([H]{})\_[inn]{}&=(1.5010\^[19]{}[cm\^[-3]{}]{})\^[-1]{}M\_\*\_\*\^[-2]{} &\
& x\^5\^3\^[-1]{}\^2\^[-2]{}. &
Then, in the middle region, where
&=(69)\^[1/10]{}M\_\*\^[-7/10]{}\_\*\^[4/5]{} &\
& x\^[-29/10]{}\^[-9/10]{}\^[1/10]{}\^[-1/2]{}\^[4/5]{}1, &
\[equation:conditionmid\] &=(4.410\^[-6]{})M\_\*\_\*\^[-1]{} &\
& x\^[4]{}\^[1/2]{}\^[-1]{}1, &
one has
\[equation:nmid\] n\_0([H]{})\_[mid]{}&=(4.8610\^[24]{}[cm\^[-3]{}]{})\^[-7/10]{}M\_\*\^[-11/10]{}\_\*\^[2/5]{} &\
& x\^[-37/10]{}\^[3/10]{}\^[-7/10]{}\^[1/2]{}\^[2/5]{}. &
Finally, in the outer region, where
&=(0.27)\^[1/10]{}M\_\*\^[-1/4]{}\_\*\^[7/20]{} &\
& x\^[-11/10]{}\^[-9/20]{}\^[1/10]{}\^[-11/40]{}\^[7/20]{}1, &
\[equation:conditionout\] &=(4.810\^[2]{})M\_\*\^[-1/2]{}\_\*\^[1/2]{} &\
& x\^[-2]{}\^[-1/2]{}\^[-1/4]{}\^[1/2]{}1, &
it is
\[equation:nout\] n\_0([H]{})\_[out]{}&=(3.0610\^[25]{}[cm\^[-3]{}]{})\^[-7/10]{}M\_\*\^[-5/4]{}\_\*\^[11/20]{} &\
& x\^[-43/10]{}\^[3/20]{}\^[-7/10]{}\^[17/40]{}\^[11/20]{}. &
In equations (\[equation:conditioninn\])–(\[equation:nout\]) we have taken $M_*=M/3M_{\odot}$, $\dot{M}_*$ is the mass accretion rate in units of $10^{17}$ g s$^{-1}$ and $x=(r/r_{\rm g})^{1/2}$. We refer the reader to @co17 for the complete expressions of the functions $\mathcal{C}$, $\mathcal{D}$, $\mathcal{R}$ and $\mathcal{P}$. Transitions among the different regions are determined by checking the validity of conditions (\[equation:conditioninn\]), (\[equation:conditionmid\]) and (\[equation:conditionout\]).
In order to obtain the hydrogen density $n({\rm H})$, calculated at the altitude $z_*$ over the equatorial plane where returning photons are eventually absorbed by the disk material, we need to specify the vertical structure of the disk. For the sake of simplicity, and since a full treatment of the disk vertical structure is beyond the scope of this work, we adopted a simple gaussian prescription for the density [see @ss73],
\[equation:verticaldensity\] n(H)&=n\_0([H]{})(-), &
where $h$ denotes the typical disk height at the distance $r$ from the center. In the three above-mentioned regions it turns out to be
\[equation:h\] h\_[inn]{}&=(0.5r\_[g]{})M\_\*\^[-1]{}\_\* &\
& x\^[-3]{}\^[-1]{}\^[-1]{} &\
h\_[mid]{}&=(7.010\^[-3]{}r\_[g]{})\^[-1/10]{}M\_\*\^[-3/10]{}\_\*\^[1/5]{} &\
& x\^[-1/10]{}\^[-1/10]{}\^[-1/10]{}\^[-1/2]{}\^[1/5]{} &\
h\_[out]{}&=(3.810\^[-3]{}r\_[g]{})\^[-1/10]{}M\_\*\^[-1/4]{}\_\*\^[3/20]{} &\
& x\^[1/10]{}\^[-1/20]{}\^[-1/10]{}\^[-19/40]{}\^[3/20]{}. &
A more general profile for the vertical structure [still within the assumption of geometrically thin disks, see e.g. @dh06] will be addressed in future investigations.
We then resorted to choose $z_*$ in such a way that the scattering optical depth calculated up to infinity is equal to $1$, i.e.
\[equation:zstaropticaldepth\] &=\_[z\_\*]{}\^n\_0([H]{})(-)\_[T]{}z1, &
with $\sigma_{\rm T}$ the Thomson cross section. Solving numerically equation (\[equation:zstaropticaldepth\]) one obtains
\[equation:zstar\] z\_\*(r)&=h(r)\^[-1]{}, &
where $\erf^{-1}$ denotes the inverse of the error function.
In all the expressions above, free parameters are the BH mass $M$ and accretion rate $\dot{M}$, the parameter $\alpha$ and the height $h_0$ of the disk at the innermost stable circular orbit. Throughout our calculations we take $\alpha=0.2$ [see @co17] and
\[equation:h0\] h\_0\^[inn]{}&=0.002r\_[g]{} &\
h\_0\^[mid]{}&=(1.810\^[-3]{}r\_[g]{})\^[1/8]{}M\_\*\^[-3/8]{}\_\*\^[1/4]{} &\
& x\_0\^[1/8]{}\_0\^[-1/8]{}\_0\^[-1/2]{} &\
h\_0\^[out]{}&=(1.310\^[-3]{}r\_[g]{})\^[1/17]{}M\_\*\^[-5/17]{}\_\*\^[3/17]{} &\
& x\_0\^[5/17]{}\_0\^[-1/17]{}\_0\^[-1/34]{}\_0\^[-8/17]{}, &
where a $0$ subscript denotes quantities calculated at $r=\rms$. The chosen values of $M$ and $\dot{M}$ are specified in the text.
\[lastpage\]
[^1]: E-mail: <[email protected]>
[^2]: In the Kerr metric and for prograde orbits, $\risco=r_{\rm g}$ for a maximally rotating BH ($a\rightarrow1$) while $\risco=6r_{\rm g}$ for a non-rotating BH (Schwarzschild case, $a=0$).
[^3]: Since the polarization of photons which arise from scatterings onto atmospheric electrons is essentially linear, we do not consider in our following calculations the Stokes parameter $v$, which accounts for circular polarization.
[^4]: We stress that [selfirr]{} naturally accounts for photons that, due to lensing, can travel along more than one geodesic between two points on the disk surface with the same direction of incidence.
[^5]: We remind that the disk material is considered to rotate around the central BH with Keplerian velocity.
[^6]: The inner radius is set as coincident to $\rms$ following the choice of $a$.
[^7]: As pointed out above, we remind here that the Stokes parameters of direct and returning photons are defined over the same radial grid.
[^8]: We checked a posteriori that increasing the resolution of the incidence direction grid at more than $100
\times100$ points does not modify significantly the output.
[^9]: We warn the reader that, at variance with @sk09, in [kyn]{} a polarization angle of $0^\circ$ is associated to polarization parallel to the disk symmetry axis [see @dov+08].
[^10]: Since in @kraw12 the polarization angle is assumed to be $0$ for polarization parallel to the disk plane, increasing for a clockwise rotation of the polarization plane, we reorganized the output of [kyn]{} in Figure \[figure:krawplot\] with the purpose of a better comparison.\[krawwarn\]
[^11]: Results for different values of the BH spin are qualitatively similar and are not shown.
| |
CROSS-REFERENCE TO RELATED APPLICATIONS
BACKGROUND
SUMMARY
DETAILED DESCRIPTION
First Embodiment
[Circuit Configuration]
[Circuit Operation]
[Configuration of the SRAM]
[Memory Cell Structure]
[Memory Cell Pattern Layout]
1
[Ac, G, P]
1
1
2
[P, M, P]
2
2
3
3
[P, M, P, M]
[Memory Cell Sectional Structure]
[Memory Cell Array]
[Tap Cell Region]
Second Embodiment
Third Embodiment
[Tap Cell Region]
Fourth Embodiment
[Memory Cell Structure]
[Memory Cell Pattern Layout]
Fifth Embodiment
[Memory Cell Pattern Layout]
Sixth Embodiment
[Configuration of the SRAM]
[Memory Cell Structure]
[Memory Cell Pattern Layout]
1
[A, G, P]
1
1
2
[P, M, P]
2
2
3
3
[P, M, P, M]
[Memory Cell Array]
[Tap Cell Region]
Seventh Embodiment
[Configuration of the SRAM]
[Memory Cell Structure]
[Memory Cell Pattern Layout]
1
[A, G, P]
1
1
2
[P, M, P]
2
2
3
3
[P, M, P, M]
[Memory Cell Array]
[Tap Cell Region]
Eighth Embodiment
[Memory Cell Structure]
[Memory Cell Pattern Layout]
Ninth Embodiment
[Circuit Configuration]
[Configuration of the SRAM]
[Memory Cell Structure]
[Memory Cell Pattern Layout]
1
[Ac, G, P]
1
1
2
[P, M, P]
2
2
3
3
[P, M, P, M]
Tenth Embodiment
[Configuration of the SRAM]
[Memory Cell Structure]
[Memory Cell Pattern Layout]
1
[A, G, P]
1
1
2
[P, M, P]
2
2
3
3
[P, M, P, M]
Eleventh Embodiment
[Circuit Configuration]
[Configuration of the SRAM]
[Memory Cell Structure]
[Memory Cell Pattern Layout]
Twelfth Embodiment
The disclosure of Japanese Patent Application No. 2011-162953 filed on Jul. 26, 2011 including the specification, drawings and abstract is incorporated herein by reference in its entirety.
The present invention relates to semiconductor devices and more particularly to technology useful for semiconductor devices having SRAMs.
1
0
SRAM (Static Random Access Memory) is a kind of semiconductor memory which stores data using a flip-flop. Specifically, in an SRAM, data ( or ) is stored in two cross-coupled inverters comprised of four transistors. In addition, two access transistors are required for reading and writing, so in a typical SRAM, a memory cell is comprised of six transistors.
FIG. 1
For example, Japanese Unexamined Patent Publication No. 2001-28401 discloses a semiconductor memory device having a static RAM memory cell comprised of six transistors ().
FIG. 32
1
4
0
2
3
1
Also, Japanese Unexamined Patent Publication No. 2002-237539 discloses an SRAM memory cell () in which NMOS transistors (N and N) are formed in one P well region (PW) and NMOS transistors (N and N) are formed in the other P well region (PW) with an N well region (NW) between the P well regions for the purpose of improving soft-error immunity.
1
1
2
2
1
1
1
1
2
2
FIG. 5
Japanese Unexamined Patent Publication No. Hei7(1995)-7089 discloses an SRAM memory cell in which two divided driver NMOS transistors (transistor regions N′, N″, N′, and N″) are disposed over different P wells () in order to improve soft-error immunity. In addition, in this SRAM cell, the gate direction of word line access transistors (NA and NB) is perpendicular to the gate direction of the driver NMOS transistors (transistor regions N′, N″, N′, and N″).
1
11
11
1
FIGS. 1 and 2
Japanese Unexamined Patent Publication No. 2002-43441 discloses an SRAM memory cell in which an N channel MOS transistor (N) with the main axis of a polysilicon wiring layer (PL) as a gate electrode and an N channel MOS transistor (N′) with the fold-back axis of the polysilicon wiring layer (PL) as a gate electrode are formed in a first P well region (PW) ( and paragraph [0062]).
21
21
13
22
22
13
14
21
21
21
21
a
b
a
b
a
b
a
b
FIG. 4
Japanese Unexamined Patent Publication No. 2000-36543 discloses an SRAM memory cell in which two word lines (and ) are orthogonal to a p-type active region () around both ends thereof and parallel to each other and their length is short, or equivalent to about ½ bit, and common gate lines (and ) are orthogonal to both the p-type active region () and n-type active region () between the word lines (and ) and parallel to each other and equally spaced along with the word lines (and ) (). In the above explanation, the signs and numbers in parentheses are reference signs and drawing numbers which are used in the related art documents.
FIG. 1
As described in Japanese Unexamined Patent Publication No 2001-28401 ( and so on), SRAM memory cells have complicated patterns and the tendency toward the miniaturization of semiconductor devices is growing, posing various problems such as fluctuations in device characteristics (gate width variation, etc) and difficulties in simulating memory characteristics.
Fluctuations in device characteristics are attributable to the shape of active regions or the shape of gate electrodes as described later.
With this background, optimization of the active region shape and gate electrode shape is expected in order to improve the controllability of device characteristics and make characteristics simulations easier.
An object of the present invention is to provide a semiconductor device with good characteristics. In particular, the invention is intended to provide a cell layout which improves the characteristics of a semiconductor device having an SRAM memory cell.
The above and further objects and novel features of the invention will more fully appear from the following detailed description in this specification and the accompanying drawings.
According to a first aspect of the present invention, a semiconductor device has a memory cell which includes elements (a1) to (a8) as described below.
(a1) is a first conductivity type first MIS transistor coupled between a first voltage and a first node.
(a2) is a second conductivity type first MIS transistor coupled between the first node and a second voltage different from the first voltage.
(a3) is a second conductivity type second MIS transistor coupled between the first node and the second voltage in parallel with the second conductivity type first MIS transistor.
(a4) is a first conductivity type second MIS transistor coupled between the first voltage and a second node.
(a5) is a second conductivity type third MIS transistor coupled between the second node and the second voltage.
(a6) is a second conductivity type fourth MIS transistor coupled between the second node and the second voltage in parallel with the second conductivity type third MIS transistor.
(a7) is a second conductivity type fifth MIS transistor coupled between the first node and a first bit line.
(a8) is a second conductivity type sixth MIS transistor coupled between the second node and a second bit line.
The semiconductor device further includes active regions (b1) to (b4) as described below.
(b1) is a monolithic first active region in which the second conductivity type first MIS transistor and the second conductivity type fifth MIS transistor are disposed.
(b2) is a second active region separated from the first active region, in which the second conductivity type second MIS transistor is disposed.
(b3) is a monolithic third active region in which the second conductivity type third MIS transistor and the second conductivity type sixth MIS transistor are disposed.
(b4) is a fourth active region separated from the third active region, in which the second conductivity type fourth MIS transistor is disposed.
The first to fourth active regions are arranged side by side in a first direction and spaced from each other.
A first gate wiring extends in the first direction over the first active region.
A second gate wiring extends in the first direction over the first active region and the second active region.
A third gate wiring extends in the first direction over the third active region.
A fourth gate wiring extends in the first direction over the third active region and the fourth active region.
According to a second aspect of the invention, a semiconductor device also includes the above elements (a1) to (a8). The semiconductor device also includes active regions (b1) and (b2). In this case, (b1) is a monolithic first active region in which the second conductivity type first transistor, the second conductivity type fourth transistor, and the second conductivity type fifth transistor are disposed. (b2) is a monolithic second active region in which the second conductivity type third transistor, the second conductivity type second transistor, and the second conductivity type sixth transistor are disposed. The first active region and the second active region are arranged side by side in a first direction. Furthermore, a first gate wiring extends in the first direction over the first active region and a second gate wiring extends in the first direction over the first active region and the second active region. A third gate wiring extends in the first direction over the first active region and the second active region; and a fourth gate wiring extends in the first direction over the second active region.
According to a third aspect of the invention, a semiconductor device also includes the above elements (a1) to (a8). The semiconductor device also includes active regions (b1) and (b2). In this case, (b1) is a monolithic first active region in which the second conductivity type first transistor, the second conductivity type fourth transistor, and the second conductivity type fifth transistor are disposed and (b2) is a monolithic second active region in which the second conductivity type third transistor, the second conductivity type second transistor, and the second conductivity type sixth transistor are disposed. The first active region and the second active region are arranged side by side in a first direction. Furthermore, a first gate wiring extends in the first direction over the first active region and a second gate wiring extends in the first direction over the first active region and the second active region. A third gate wiring extends in the first direction over the first active region and the second active region and a fourth gate wiring extends in the first direction over the first active region.
According to the preferred embodiments of the present invention as described below, semiconductor device characteristics are improved.
Descriptions of the preferred embodiments will be made below in different sections or separately as necessary, but such descriptions are not irrelevant to each other unless otherwise specified. One description may be, in whole or in part, a modified, applied, detailed or supplementary form of another. Also, regarding the preferred embodiments described below, even when a specific number (the number of pieces, numerical value, quantity, range, etc.) is indicated for an element, it should be interpreted that it is not limited to the specific number unless otherwise specified or theoretically limited to that number; it may be larger or smaller than the specific number.
In the preferred embodiments described below, constituent elements (including constituent steps) are not necessarily essential unless otherwise specified or theoretically essential. Similarly, in the preferred embodiments described below, even when a specific form or positional relation is indicated for an element, it should be interpreted to include a form or positional relation which is virtually equivalent or similar to the specific form or positional relation unless otherwise specified or theoretically limited to the specific form or positional relation. The same can be said of numerical data (the number of pieces, numerical value, quantity, range, etc.) as mentioned above.
Next, the preferred embodiments will be described in detail referring to the accompanying drawings. In all the drawings that illustrate the preferred embodiments, elements with like functions are designated by like reference numerals and repeated descriptions thereof are omitted. When a plurality of like members or portions are provided, a specific reference sign may be added to the generic reference sign for them in order to express a specific member or portion. Regarding the preferred embodiments below, basically descriptions of the same or similar elements are not repeated except when necessary.
Regarding the drawings that illustrate preferred embodiments, hatching may be omitted even in a sectional view for easy understanding and hatching may be used even in a plan view for easy understanding.
FIG. 1
1
2
1
2
2
4
The semiconductor device (semiconductor memory device, semiconductor integrated circuit device) according to a first embodiment has SRAM memory cells. is an equivalent circuit diagram showing an SRAM memory cell according to the first embodiment. As shown in the figure, the memory cell is located at the intersection of a pair of bit lines (bit line BL and bit line/BL) and a word line WL. The memory cell includes a pair of load transistors (load MOSs, load transistors, or load MISFETs) TP and TP, a pair of access transistors (access MOSs, access transistors, access MISFETs, or transfer transistors) TNA and TNA, and a pair of driver transistors (driver MOSs, driver transistors, or driver MISFETs) TND and TND.
1
2
3
4
1
2
1
2
1
2
3
4
This embodiment has a driver transistor TND coupled in parallel with the driver transistor TND. It also has a driver transistor TND coupled in parallel with the driver transistor TND. Among the eight transistors of the memory cell, the load transistors (TP and TP) are p-type (p-channel) transistors of the first conductivity type and the access transistors (TNA and TNA) and driver transistors (TND, TND, TND, and TND) are n-type (n-channel) transistors of the second conductivity type.
MOS is an abbreviation for Metal Oxide Semiconductor and MISFET is an abbreviation for Metal Insulator Semiconductor Field Effect Transistor. Hereinafter, the load transistors, access transistors, and driver transistors are sometimes simply called “transistors.” Also a transistor may be hereinafter indicated only by the reference sign for that transistor.
2
1
4
2
Among the eight transistors of the memory cell, TND and TP make up a CMOS (complementary MOS) inverter (or CMIS inverter) and TND and TP make up another CMOS inverter. The input/output terminals (storage nodes A and B) of this pair of CMOS inverters are cross-coupled, making up a flip-flop circuit as a data memory which stores data for one bit.
1
3
2
4
1
2
1
3
4
2
In the SRAM memory cell according to this embodiment, since TND and TND are located in parallel with TND and TND respectively, it can be considered that TND, TND, and TP make up a CMOS inverter and TND, TND, and TP make up the other CMOS inverter.
The interconnection arrangement of the eight transistors of the SRAM memory cell according to this embodiment is explained in detail below.
1
1
2
1
1
2
TP is coupled between the supply voltage (VDD, primary supply voltage) and the storage node A, and TND and TND are coupled in parallel with each other between the storage node A and grounding voltage (VSS, GND, reference voltage, secondary supply voltage lower than the primary supply voltage, or secondary supply voltage different from the primary supply voltage), and the gate electrodes of TP, TND, and TND are coupled to the storage node B.
2
3
4
2
3
4
TP is coupled between the supply voltage and the storage node B, and TND and TND are coupled in parallel with each other between the storage node B and grounding voltage, and the gate electrodes of TP, TND, and TND are coupled to the storage node A.
1
2
1
2
TNA is coupled between the bit line BL and storage node A, and TNA is coupled between the bit line /BL and storage node B, and the gate electrodes of TNA and TNA are coupled to the word line WL.
1
2
3
4
As can be understood from the above explanation, in the SRAM memory cell according to this embodiment, each driver transistor is considered as being divided into two transistors (TND and TND, and TND and TND).
1
2
3
4
Since TND and TND share a gate electrode, they may be thought to make up a single transistor, but in the explanation below, they will be treated as two different transistors. The same is true for TND and TND.
3
4
1
2
Next, how the SRAM memory cell circuit operates will be described. When the voltage of the CMOS inverter storage node A is high (H), TND and TND are turned on, so the voltage of the storage node B of the other CMOS inverter is low (L). Therefore, TND and TND are turned off and the voltage of the storage node A is kept high (H). In other words, the latch circuit in which a pair of CMOS inverters are cross-coupled holds the state of each of the storage nodes A and B, so that while the supply voltage is applied, the data is saved.
1
2
1
2
On the other hand, the gate electrode of each of TNA and TNA is coupled to the word line WL. When the voltage of the word line WL is high (H), TNA and TNA are turned on and the flip-flop circuit and the bit lines (BL and /BL) are electrically coupled, so the voltage state (H or L) of the storage nodes A and B appears on the bit lines BL and /BL and is read as memory cell data.
1
2
In order to write data in the memory cell, the voltage of the word line WL should be high (H) and turn on TNA and TNA so that the flip-flop circuit and bit lines (BL and /BL) are electrically coupled to transfer data (a combination of H and L or a combination of L and H) of the bit lines (BL and /BL) to the storage nodes A and B to store the data as mentioned above.
FIGS. 2 to 4
FIG. 2
FIG. 3
FIG. 4
FIGS. 2 and 3
FIGS. 2 and 3
FIGS. 3 and 4
FIGS. 3 and 4
1
1
1
2
2
2
3
3
1
2
are plan views showing the SRAM memory cell structure according to the first embodiment. shows the arrangement of active regions Ac, gate electrodes G, and first plugs P. shows the arrangement of the first plugs P, first layer wirings M, and second plugs P. shows the arrangement of the second plugs P, second layer wirings M, third plugs P, and third layer wiring M. When the plan views of are placed one upon the other with reference to the first plugs P, the positional relation between the patterns shown in becomes clear. When the plan views of are placed one upon the other with reference to the second plugs P, the positional relation between the patterns shown in becomes clear. The rectangular area surrounded by the chain line in the figures denotes one memory cell region (for 1 bit).
FIGS. 6 to 11
FIG. 6
FIG. 2
FIG. 7
FIG. 2
FIG. 8
FIG. 2
FIG. 9
FIG. 2
FIG. 2
FIG. 11
FIG. 2
FIGS. 9 to 11
FIG. 2
FIGS. 2 to 4
1
are sectional views showing the SRAM memory cell structure according to the first embodiment. is a sectional view taken along the line A-A′ of , is a sectional view taken along the line B-B′ of , and is a sectional view taken along the line C-C′ of . is a sectional view taken along the line A-A′ of , FIG. is a sectional view taken along the line B-B′ of , and is a sectional view taken along the line C-C′ of . also show layers above the first plugs P shown in and are sectional views taken along the line A-A′, line B-B′ and line C-C′ respectively in which the patterns shown in the plan views of are placed one upon another.
FIG. 2
FIG. 2
FIG. 12
As shown in , a p-type well (P-well, first region, first conductivity type first well), an n-type well (N-well, second region, or second conductivity type second well) and a p-type well (P-well, third region, or first conductivity type third well) are arranged side by side in an X direction (first direction) over a semiconductor substrate. Although only one memory cell region (1 bit) is shown in , memory cells are repeatedly disposed in the X direction (first direction) and Y direction (second direction intersecting with the first direction) (see ), so these wells (P-well, N-well and P-well) are considered to continuously extend in the Y direction. The exposed regions of these wells are active regions (transistor formation regions Ac).
2
1
1
2
3
4
FIG. 6
Over the semiconductor substrate, six active regions (AcP, AcP, AcN, AcN, AcP, and AcP) are arranged side by side in the X direction. An element isolation region (STI) lies between active regions (Ac). In other words, the active regions (Ac) are marked out or separated by the element isolation regions (STI). The wells (P-well, N-well, P-well) are continuous with each other under the element, isolation regions STI, as shown in .
2
1
In other words, AcP and AcP are arranged side by side in the X direction (first direction) and spaced from each other.
1
2
3
4
Similarly, AcN and AcN, and AcP and AcP are arranged side by side in the X direction (first direction) and spaced from each other.
2
1
In further other words, AcP is located so as to sandwich an element isolation region with AcP in the X direction (first direction).
2
1
Similarly, AcN is located so as to sandwich an element isolation region with AcN in the X direction (first direction).
4
3
Similarly, AcP is located so as to sandwich an element isolation region with AcP in the X direction (first direction).
2
1
2
1
FIG. 2
FIGS. 12 and 13
FIG. 13
A further explanation of each active region is given below. The active region AcP is an exposed region of the p-type well (P-well) which is virtually rectangular with its long side in the Y direction. The active region AcP is located next to the active region AcP and is an exposed region of the p-type well (P-well) which is virtually rectangular with its long side in the Y direction. Although only one memory cell region (1 bit) is shown in for illustration convenience, memory cells are repeatedly disposed in the X direction and Y direction (), so the active region AcP is considered to extend in the Y direction linearly () in the memory cell array, as described later. The expression “linearly” here may be interpreted to be equivalent to the expression “virtually rectangular with its long side in the Y direction.”
1
2
The active region AcN is an exposed region of the n-type well (N-well) which is virtually rectangular with its long side in the Y direction. The active region AcN is an exposed region of the n-type well (N-well) which is virtually rectangular with its long side in the Y direction.
3
4
3
3
1
13
The active region AcP is an exposed region of the p-type well (P-well) which is located on the right of the n-type well as seen in the figure and virtually rectangular with its long side in the Y direction. The active region AcP is an exposed region of the p-type well (P-well) which is located next to the active region AcP and virtually rectangular with its long side in the Y direction. In the memory cell array, the active region AcP extends in the Y direction linearly like AcP (FIG. ).
2
1
1
2
3
4
FIG. 7
FIG. 7
Gate electrodes (gate wirings, linear gates) G extend over the six active regions (AcP, AcP, AcN, AcN, AcP, and AcP) through a gate insulating film (GO in , etc.) in a way to cross the active regions in the X direction, as components of the eight transistors as described above in the “Circuit Configuration” section. The active regions (Ac) on both sides of each gate electrode G function as transistor source/drain regions ( and so on).
1
4
1
4
1
1
2
Next, the gate electrodes G will be explained in detail. Hereinafter, the generic sign “G” is used to refer to the gate electrodes collectively but a specific reference numeral ( to ) is added to the sign “G” to indicate a specific gate electrode. In the relevant drawings, sometimes the generic sign is used and sometimes the generic sign “G” is followed by specific reference numerals ( to ). In this specification, not only the generic sign G (for gate electrodes) but also P (for first plugs), M (for first layer wirings), and M (for second layer wirings) are sometimes followed by specific reference signs (numerals and alphabetic characters).
1
2
1
1
2
2
1
1
1
1
1
1
Specifically, a common gate electrode G is disposed over the active regions AcP, AcP, and AcN in a way to cross them. Consequently TND is disposed over the active region AcP, TND is located over the active region AcP, and TP is located over the active region AcN and their gate electrodes (G) are coupled to each other. TP is disposed over the active region AcN and p-type source/drain regions are provided on both sides of the gate electrode G.
2
1
1
1
1
1
1
Another common gate electrode G is disposed over the active region AcP in parallel with the common gate electrode G. Consequently, TNA is disposed over the active region AcP and an n-type source/drain region of TNA and an n-type source/drain region of TND are joined (into a common source/drain region).
3
4
3
2
4
3
2
4
3
2
2
2
Also, a common gate electrode G is disposed over the active regions AcP, AcP, and AcN in a way to cross them. Consequently TND, TND, and TP are disposed over the active regions AcP, AcP, and AcN respectively and their gate electrodes (G) are coupled to each other. TP is disposed over the active region AcN and p-type source/drain regions are provided on both sides of the gate electrode G.
4
3
3
2
3
2
3
Another common gate electrode G is disposed over the active region AcP in parallel with the common gate electrode G. Consequently, TNA is disposed over the active region AcP and an n-type source/drain region of TNA and an n-type source/drain region of TND are joined (into a common source/drain region).
1
4
1
2
1
1
4
3
3
4
3
2
2
1
The above four gate electrodes G (G to G) are arranged in line (linear form) on a basis of two electrodes per line. Specifically, the common gate electrode G overlying and crossing the active regions AcP, AcP, and AcN and the gate electrode G overlying the active region AcP are arranged in a line extending in the X direction. The common gate electrode G overlying and crossing the active regions AcP, AcP, and AcN and the gate electrode G overlying the active region AcP are arranged in a line extending in the X direction.
1
2
3
4
2
1
4
3
2
1
4
3
As mentioned above, in this embodiment, each driver transistor is divided into two transistors (TND and TND or TND and TND) which are located over different active regions (AcP and AcP or AcP and AcP). In addition, since these active regions (AcP and AcP or AcP and AcP) extend in the Y direction, the layout can be simplified and higher patterning accuracy can be achieved.
FIG. 64
FIG. 1
2
4
1
3
is a plan view showing an SRAM memory cell as a comparative example against the first embodiment. The equivalent circuit diagram for this memory cell is the same as the circuit diagram shown in except that TND and TND are excluded. In this case, in order to increase the driving performance of the driver transistors TND and TND, it is necessary to increase the active region width (gate width or channel width) or the gate length or take other measures.
1
3
1
2
Preferably the driving performance of the driver transistors (TND and TND) should be larger than that of the access transistors (TNA and TNA). For example, it is preferable that the gate width ratio between the access transistors and the driver transistors be 1:2. The driving performance ratio as expressed by a gate width ratio is called “β ratio.” μ ratio will be explained in detail later.
FIG. 64
FIG. 65
FIG. 65
1
1
In this case, each active region (Ac) is supposed to have a bent portion (bend or stepped portion) as shown in . However, actually, patterning according to a desired reticle pattern is difficult and as a result of failure to make the bent portions accurately, it may happen that the width of the active region is gradually increased as shown in . is a plan view showing a portion of an SRAM memory cell as a comparative example against the first embodiment. In this case, the gate width of TNA is not constant, leading to deterioration in the transistor characteristics of TNA. Furthermore, as for the memory cell array, it may often happen that patterning accuracy varies from one memory cell to another, resulting in unstable product quality. In this case, characteristics variation among memory bells may be significant and result in product defects. As the miniaturization of memory cells progresses, this tendency would grow.
1
2
3
4
2
1
4
3
1
3
1
2
2
1
4
3
On the other hand, in this embodiment, as mentioned above each driver transistor is divided into two transistors (TND and TND or TND and TND) which are located over different active regions (AcP and AcP or AcP and AcP). Therefore, it is possible to make the driving performance of the driver transistor (TND, TND) larger than that of the access transistor (TNA, TNA). For example, the gate width ratio between the access transistor and driver transistor can be easily made 1:2 by making the ratio in width (length in the X direction) between the active regions (AcP and ACP or AcP and AcP) 1:1.
1
2
3
4
Since active regions are separated from each other (TND and TND or TND and TND), each active region can be virtually rectangular, namely it is not supposed to have a bent portion as mentioned above. Consequently, patterning accuracy is improved and the characteristics of the transistors formed over the active regions (Ac) are improved. Furthermore, product quality instability is reduced and the performance characteristics of the SRAM memory cell array are improved. Also, production yield is improved.
1
3
1
2
1
3
1
2
3
4
FIG. 2
Furthermore, since not only a driver transistor (TND or TND) but also an access transistor (TNA or TNA) are located over one (ACP or AcP in ) of the active regions (for TND and TND or TND and TND), the number of active regions is decreased. This permits simpler layout and contributes to reduction in memory cell region size.
Furthermore, since the active regions (Ac) extend in the Y direction, the gate electrodes (G) can extend in the X direction so not only the patterning accuracy of the active regions (Ac) but also that of the gate electrodes (G) can be improved. Particularly, the multiple exposure technique may be used in microfabrication for fine patterns. For example, after exposure is made in a linear form in the X direction, exposure in the Y direction, namely exposure for the regions to be separated, is made. By using such double exposure technique, the accuracy in pattering the photoresist film can be improved and the accuracy in patterning the underlying film to be etched can be improved. When this multiple exposure technique is employed, preferably the patterns should be linear. Therefore, since the active regions (Ac) and gate electrodes (G) are to be arranged in a linear form as mentioned above, it is easy to employ the multiple exposure technique and the patterning accuracy can be improved. In addition, it is easy to create a simulation model, thereby contributing to improvement in inspection accuracy.
FIG. 3
FIG. 2
FIG. 2
1
2
1
1
1
2
3
2
4
1
As shown in , first plugs P are disposed over the source/drain regions of the eight transistors (TND, TNA, TND, TP, TP, TND, TNA, TND) described above referring to . Also, first plugs P are disposed over the four gate electrodes described above referring to .
1
1
1
First layer wirings M are disposed over the first plugs P for electrical couplings between first plugs P.
1
2
1
1
1
1
1
1
3
2
3
4
1
1
2
1
a
b
c
d
FIG. 1
FIG. 2
Specifically, a first plug Pover one source/drain region of TND, a first plug Pover the common source/drain region of TND and TNA, a first plug Pover one source/drain region of TP, and a first plug Pover the common gate electrode G of TP, TND, and TND are coupled by a first layer wiring (first node wiring) MA. This first layer wiring MA (first node wiring) corresponds to the storage node A shown in . In the above explanation, “one” means the upper source/drain region of each relevant transistor (TND, TP) as seen in .
1
4
1
3
2
1
2
1
1
1
1
2
1
1
1
1
1
4
2
e
f
g
h
FIG. 1
FIG. 2
A first plug Pover one source/drain region of TND, a first plug Pover the common source/drain region of TND and TNA, a first plug Pover one source/drain region of TP, and a first plug Pover the common gate electrode G of TP, TND, and TND are coupled by a first layer wiring (second node wiring) MB. This first layer wiring (second node wiring) MB corresponds to the storage node B shown in . The first wiring M (MA or MB) corresponding to the storage node (A or B) generally extends in the X direction. In the above explanation, “one” means the lower source/drain region of each relevant transistor (TND, TP) as seen in .
1
1
1
2
1
1
i
j
FIG. 1
Also a first plug Pover the other source/drain region of TND and a first plug Pover the other source/drain region of TND are coupled by a first layer wiring MS. This first layer wiring MS corresponds to a grounding voltage (VSS) in and is coupled to a grounding voltage line (LVSS) as described later.
1
4
1
3
1
1
k
m
FIG. 1
A first plug Pover the other source/drain region of TND and a first plug Pover the other source/drain region of TND are coupled by a first layer wiring MS. This first layer wiring MS corresponds to a grounding voltage (VSS) in and is coupled to a grounding voltage line (LVSS) as described later.
1
1
1
1
1
1
1
1
1
1
2
1
2
n
o
q
Also, first layer wirings M (MBL and MD) are disposed over a first plug Pover the other source/drain region of TNA, and a first plug Pover the other source/drain region of TP respectively. Also, first layer wirings M (MBL and MD) are disposed over a first plug Pip over the other source/drain region of TNA and a first plug Pover the other source/drain region of TP respectively.
1
1
2
1
1
1
4
2
1
2
4
1
1
1
1
1
1
1
r
s
Also, a first layer wiring MW is disposed over a first plug Pover the gate electrode G of TNA and a first layer wiring MW is disposed over a first plug Pover the gate electrode G of TNA. While the first layer wirings MW coupled to these gate electrodes G (G and G) extend in the Y direction at the ends of the memory cell region in the X direction, other first layer wirings M (MS, MD, and MBL) generally extend in the X direction like the first layer wirings M (MA and MB) corresponding to the storage nodes (A and B).
1
1
1
1
FIG. 1
The couplings between first plugs P by the first layer wirings M may be modified in various ways as far as the interconnection structure shown in the circuit diagram of is satisfied. However, it should be noted that the layout can be simplified when the first layer wirings M at the ends of the memory cell region extend in the Y direction and the first layer wirings M inside the memory cell region extend in the X direction as mentioned above.
FIG. 4
FIG. 3
2
1
1
1
1
1
1
1
1
1
2
As shown in , second plugs P are disposed over the first layer wirings M (MS, MD, MBL, and MW), among the first layer wirings M described above referring to , other than the first layer wirings M (MA and MB) corresponding to the storage nodes (A and B), and second layer wirings M are disposed over them.
1
2
1
2
2
1
4
2
2
2
2
3
2
3
3
3
2
Specifically, the first layer wiring MW coupled to the gate electrode G (G) of TNA is coupled to a second layer wiring MW through a second plug P. The first layer wiring MW coupled to the gate electrode G (G) of TNA is coupled to a second layer wiring MW through a second plug P. These two second layer wirings MW extend in the Y direction at the ends of the memory cell region in the X direction. Furthermore, third plugs P are disposed over the two second layer wirings MW and a third layer wiring M (WL) extends in the X direction so as to couple the two third plugs P. This third layer wiring M (WL) is a word line. For this reason, the above second layer wirings MW may be referred to as the “second layer wirings coupled to the word line.”
2
1
2
2
2
1
4
3
2
2
2
2
2
The first layer wiring MIS coupled to the other source/drain region of TND and the other source/drain region of TND is coupled to a second layer wiring M (LVSS) through a second plug P. This second layer wiring M (LVSS) is a grounding voltage line (secondary supply voltage line supplied with the secondary supply voltage). The first layer wiring MS coupled to the other source/drain region of TND and the other source/drain region of TND is coupled to a second layer wiring M (LVSS) through a second plug P. This second layer wiring M (LVSS) is a grounding voltage line. These two grounding voltage lines extend in the Y direction between the above two second layer wirings M (MW) located at the ends of the memory cell region.
1
1
2
2
2
1
2
2
2
2
The first layer wiring MBL coupled to the other source/drain region of TNA is coupled to a second layer wiring M (BL, first bit line) through a second plug P. This second layer wiring M (BL) is one bit line of the bit line pair. The first layer wiring MBL coupled to the other source/drain region of TNA is coupled to a second layer wiring M (/BL, second bit line) through a second plug P. This second layer wiring M (/BL) is the other bit line of the bit line pair. These two bit lines (BL and /BL, or a bit line pair) extend in the Y direction between the two grounding voltage lines (LVSS).
2
2
1
1
2
1
2
2
2
A second layer wiring M (LVDD) is disposed so as to couple the second plug P over the first layer wiring MD coupled to the other source/drain region of TP and the second plug P over the first layer wiring MD coupled to the other source/drain region of TP. This second layer wiring M (LVDD) is a supply voltage line (primary supply voltage line supplied with the primary supply voltage). This supply voltage line generally extends in the Y direction between the two bit lines (BL, /BL) and includes a linear portion extending in the Y direction and portions which protrude from this linear portion and cover the second plugs P.
2
2
3
3
2
3
FIG. 1
FIGS. 2 to 4
FIG. 14
The couplings of the second plugs P, second layer wirings M, third plugs P and third layer wiring M may be modified in various ways as far as the interconnection structure shown in the circuit diagram of is satisfied. However, it should be noted that the layout can be simplified when the second layer wirings M generally extend in the Y direction and the third layer wiring M generally extends in the X direction as mentioned above. Although only one memory cell region (1 bit) is shown in for illustration convenience, memory cells are repeatedly disposed in the X direction and Y direction as described later, so in the memory cell array, the grounding voltage lines (LVSS), bit lines (BL, /BL) and supply voltage lines (LVDD) continuously extend in the Y direction and the word lines (WL) continuously extend in the X direction ().
2
1
4
3
1
2
3
4
2
2
In this embodiment, active regions are separated from each other (AcP and AcP or AcP and AcP), so the area for the formation of the driver transistors (TND and TND or TND and TND) is increased because of the existence of the element isolation region (STI) between the active regions. Using this area, a grounding voltage line (LVSS) can be disposed between the second layer wiring MW (second layer wiring coupled to the word line) and bit line (BL, /BL) as mentioned above. Consequently, interaction (crosstalk noise) between the second layer wiring MW (second layer wiring coupled to the word line) and the bit line (BL, /BL) is reduced due to the shielding effect of the grounding voltage line (LVSS).
2
Furthermore, the distance (d1) between the grounding voltage line (LVSS) and bit line (BL, /BL) can be increased to reduce the wiring capacitance between these lines. Also the distance (d2) between the supply voltage line (LVDD) and bit line (BL, /BL) can be increased to reduce the wiring capacitance between these lines. Especially, since the bit lines (BL, /BL) play an important role in reading or writing data, change in voltage due to noise may affect the memory performance seriously. By increasing the distance (d1) between the grounding voltage line (LVSS) and bit line (BL, /BL) or the distance (d2) between the supply voltage line (LVDD) and bit line (BL, /BL), the memory performance characteristics can be improved. For example, the memory performance characteristics can be improved by satisfying the relations of d3<d1 and d3<d2, where d3 represents the distance between the second layer wiring MW (second layer wiring coupled to the word line) and bit line (BL, /BL).
FIGS. 2 to 4
The patterns described above referring to are symmetrical with respect to the center point of the memory cell region.
FIG. 5
2
1
1
1
2
3
2
4
For reference, is a circuit diagram showing how the eight transistors (TND, TNA, TND, TP, TP, TND, TNA, and TND) are arranged and interconnected in accordance with the above “Memory Cell Pattern Layout.”
FIGS. 6 to 11
Next, the sectional structure of the above layout will be described referring to the sectional views of in order to clarify more the SRAM memory cell structure according to this embodiment.
FIGS. 6 to 8
FIG. 6
1
2
1
1
2
3
4
As shown in , element isolation regions STI are formed in a semiconductor substrate . Active regions (Ac) are marked out by the element isolation regions STI. In other words, an area surrounded by element isolation regions STI is an active region (Ac). As mentioned earlier, six active regions (AcP, AcP, AcN, AcN, AcP, and AcP) are arranged side by side in the X direction, as can be understood from the sectional views of and so on.
1
The element isolation regions STI can be formed by the STI (shallow trench isolation) technique. Specifically element isolation trenches are made in the semiconductor substrate by photolithography or etching. An oxide silicon film is formed over the semiconductor substrate in a way to fill the element isolation trenches and then unwanted portions of the oxide silicon film portions are removed by CMP (chemical mechanical polishing). As a result, element isolation regions STI are formed as element isolation trenches filled with oxide silicon film. Alternatively the element isolation regions STI may be formed by LOCOS (local oxidation of silicon).
1
FIG. 6
FIG. 12
A p-type well (P-well) doped with p-type impurities (for example, boron) and an n-type well (N-well) doped with n-type impurities (for example, phosphorous or arsenic) are formed in the semiconductor substrate . A p-type well (P-well) can be formed, for example, by implanting p-type impurities into an active region (Ac) using an ion implantation technique and an n-type well (N-well) can be formed, for example, by implanting n-type impurities into an active region (Ac) using an ion implantation technique. As mentioned above, these wells are continuous with each other under the element isolation regions STI, extending in the Y direction with a given width (, and so on.). Three wells (P-well, N-well, and P-well) are arranged side by side in the X direction. Specifically, the p-type wells (P-well) are located on both sides of the n-type well (N-well). A semiconductor region (not shown) for the formation of a channel may be formed over the surface of each well. This semiconductor region for the formation of a channel is intended to adjust the threshold voltage in the formation of a channel.
A gate insulating film GO is formed over the main surface of each active region (Ac). For example, an oxide silicon film may be used for the gate insulating film GO. The gate insulating film GO can be formed, for example, by thermal oxidation or CVD (chemical vapor deposition).
FIGS. 7 and 8
Gate electrodes G are formed over the gate insulating film GO (). For example, a polycrystalline silicon film may be used for gate electrodes G. Gate electrodes G can be formed, for example, by depositing a polycrystalline silicon film over the semiconductor substrate including the gate insulating film GO by using CVD or a similar technique and patterning it. Alternatively the gate electrodes G may be formed as a laminated film of polycrystalline silicon film and metal film.
Alternatively a high-k film may be used for the gate insulating film and the gate electrodes may have a metal gate structure.
FIG. 2
“Patterning” here means a process in which a photoresist film over the film to be processed is made into a desired pattern by exposure and development and then the film to be processed is etched using the photoresist film as a mask. By using the double exposure technique as mentioned above in patterning for gate electrodes G, gate electrodes (G) can be formed accurately with microscopic line width and spacing. The double exposure technique can be easily applied to the abovementioned layout according to this embodiment (see and so on).
1
1
1
1
FIGS. 7 and 8
FIGS. 7 and 8
In the p-type well (P-well), n-type low-doped regions EX are formed on both sides of each gate electrode G (). The n-type low-doped regions EX can be formed by implanting n-type impurity ions in the active regions (AcP) using the gate electrodes G as a mask. In the n-type well (N-well), p-type low-doped regions EX are formed on both sides of each gate electrode G (). The p-type low-doped regions EX can be formed by implanting p-type impurity ions in the active regions (AcN) using the gate electrodes G as a mask.
FIGS. 7 and 8
1
Sidewalls SW are formed on both sides of each gate electrode G (). The sidewalls SW are, for example, a nitride silicon film. For example, an insulating film such as a nitride silicon film is deposited over the semiconductor substrate including the gate electrodes G, by CVD and then anisotropic etching is done to leave some portions of insulating film on both sides of the gate electrodes G as sidewalls SW.
2
2
2
2
2
1
1
2
FIGS. 7 and 8
FIGS. 7 and 8
In the p-type well (P-well), p-type high-doped regions EX are formed on both sides of each gate electrode G combined with sidewalls SW (). The n-type high-doped regions EX can be formed by implanting n-type impurity ions using the gate electrode-sidewall combination as a mask. In the n-type well (N-well), p-type high-doped regions EX are formed on both sides of the electrode-sidewall combination (). The p-type high-doped regions EX can be formed by implanting p-type impurity ions using the gate electrode-sidewall combination as a mask. The high-doped regions EX are higher in impurity concentration and larger in depth than the low-doped regions EX. The low-doped regions EX and high-doped regions EX make up LDD (lightly doped drain) type source/drain regions. A source/drain region refers to a region which becomes a source or drain. Such a source/drain region may be referred to as “one end” or “the other end” of a transistor region.
1
2
3
4
2
1
4
3
1
2
1
2
3
4
FIG. 7
FIG. 7
As mentioned above, in this embodiment, a driver transistor is divided into two transistors (TND and TND or TND and TND) which are disposed over different active regions (AcP and AcP or AcP and AcP), as apparent from the sectional view of and so on. Also, in this embodiment, the access transistor TNA (TNA) is located in the active region for TND and TND (TND and TND), as apparent from the sectional view of and so on.
Alternatively the transistors may be formed by the so-called gate-last process in which metal gates are formed after making gate pattern trenches using dummy gates.
FIGS. 9 to 11
FIGS. 9 to 11
FIG. 2
1
2
1
1
2
1
1
1
1
1
1
2
1
1
1
As shown in , a plug P is disposed over the high-doped region EX (source/drain region) of each transistor (TNA, TND, TND, TP and so on). Although not shown in the sectional views of , plugs P are formed over the gate electrodes G (). Plugs P can be formed by the following process. As an interlayer insulating film ILL a laminated film of nitride silicon film and oxide silicon film, is formed over the semiconductor substrate including the transistors (TNA, TND, TND, TP and so on). Then, contact holes are made in the interlayer insulating film IL and a conductive film is deposited over the interlayer insulating film IL including the inner surfaces of the contact holes. A laminated film of barrier film and metal film may be used for the conductive film. For example, a Ti (titanium) film or TiN (nitride titanium) film or a laminated film of these films may be used for the barrier film. For example, a W (tungsten) film may be used for the metal film. By removing the conductive film except its contact hole portions by CMP or a similar technique, the contact holes remain filled with the conductive film.
1
1
1
1
A first layer wiring M is disposed over plugs P. The first layer wirings M can be formed by pattering a conductive film. Alternatively the first layer wirings M may be buried wirings (damascene wirings).
2
1
2
2
2
1
2
1
2
2
2
Second layer wirings M (LVSS, BL, /BL, LVDD and so on) are disposed over the first layer wirings M through second plugs P. In other words, these wirings lie in the same layer. The second plugs P can be formed in the interlayer insulating film IL in the same way as the first plugs P. The second layer wirings M can be formed in the same way as the first layer wirings M. The second layer wirings M may be buried wirings. If that is the case, the so-called dual damascene process may be used in which a conductive film is filled in the contact holes and wiring trenches simultaneously to form the second plugs P and second layer wirings M simultaneously.
3
2
3
3
3
1
3
1
3
3
3
Third layer wirings M (WL) are disposed over the second layer wirings M through third plugs P. The third plugs P can be formed in the interlayer insulating film IL in the same way as the first plugs P. The third layer wirings M can be formed in the same way as the first layer wirings N. The third layer wirings M may be buried wirings. If that is the case, the so-called dual damascene process may be used in which a conductive film is filled in the contact holes and wiring trenches simultaneously to form the third plugs P and third layer wirings M simultaneously.
1
1
2
1
1
2
1
1
3
FIG. 7
Although the process for making the patterns of the above sectional structure is not limited, the patterns may be made in the following order. First, element isolation regions STI are formed in the semiconductor substrate before wells (P-well, N-well, P-well) are formed. Then, the gate insulating film GO and gate electrodes G are formed and the low-doped regions EX are formed before the sidewalls SW are formed and the high-doped regions EX are formed to make the various transistors (TNA, TND, TND, TP and so on) ( and so on). After that, the steps of forming interlayer insulating films, plugs, and wirings are repeated to form the first to third layer wirings (M to M) and so on. After that, further layers of wirings may be formed. Also, patterns for tap cells (power supply cells) which will be described later may be made at the same time. Also, a peripheral circuit such as a decoder for driving the SRAM may be formed at the same time.
In the explanation of the other embodiments given below, descriptions of various manufacturing steps and relevant sectional views are omitted, but the sectional structures of their transistors are similar to those of this embodiment and can be formed by the same process as mentioned above.
FIG. 12
FIGS. 13 and 14
FIG. 13
FIG. 14
FIGS. 13 and 14
FIG. 12
2
2
2
2
is a plan view schematically showing the SRAM memory cell array according to this embodiment. are plan views showing the structure of the SRAM memory cell array according to this embodiment. shows the layout of the pattern for the lower layers up to the second plugs P and shows the layout of the pattern above the second plugs p. What is shown in corresponds to the four cells ( by ) in the lowest and second lowest rows and the first and second columns from left as seen in .
FIG. 12
4
In the memory cell array shown in in which “F” denotes a memory cell region described above referring to FIGS. to , in the vertical direction (Y direction) memory cell regions are repeatedly disposed axially symmetrically with respect to each line (X axis) extending in the X direction (mirroring with respect to the X axis) and in the horizontal direction (X direction) memory cell regions are repeatedly disposed axially symmetrically with respect to each line (Y axis) extending in the Y direction (mirroring with respect to the Y axis).
FIG. 12
FIGS. 13 and 14
FIGS. 2 to 4
FIGS. 6 to 11
FIGS. 13 and 14
The arrangement and sectional structure of the memory cell regions as expressed by “F” in (rectangular areas surrounded by the chain lines in ) have been as detailed above referring to the plan views of and the sectional views of . The patterns of the other memory cell regions as well as those expressed by “F” are axially symmetrical to each line extending in the X or Y direction ().
FIG. 13
As mentioned above, the wells (P-well, N-well, P-well) of each memory cell region extend in the Y direction (). One p-type well of a memory cell region adjoins a p-type well of a memory cell adjacent to that cell, so when the memory cell array is viewed as a whole, p-type wells (P-well) and n-type wells (N-well) are alternately arranged in the X direction.
FIG. 12
While a plurality of cell regions (m×n cell regions) are disposed in a memory cell array as described above referring to , the memory cell array also includes tap cell regions (power supply regions). Prescribed voltages (for example, grounding voltage VSS and supply voltage VDD) are supplied to the wells through the tap cell regions.
FIG. 15
schematically shows the positions of tap cell regions in the SRAM memory cell array according to this embodiment. As illustrated, tap cells (power supply cells) are provided on the basis of one tap cell per n memory cell regions arranged in the Y direction and repeatedly disposed in the X direction axially symmetrically with respect to each line extending in the Y direction. In other words, a tap cell region is provided in the Y direction for every array of m×n memory cell regions and a plurality of tap cells are arranged in the X direction. The tap cells arranged in X direction are each expressed by “F′.”
FIGS. 16 and 17
FIG. 16
FIG. 17
FIGS. 16 and 17
FIGS. 16 and 17
1
1
2
2
2
3
3
2
are plan views showing the structure of the SRAM tap cell (F′) according to this embodiment. shows the arrangement of active regions (power supply or voltage supply regions) AcS, dummy gate electrodes DG, first plugs P, first layer wirings M and second plugs P. shows the arrangement of the second plugs P, second layer wirings M, third plugs P, and third layer wirings M. When the plan views of are placed one upon the other with reference to the second plugs P, the positional relation between the patterns shown in becomes clear. The rectangular area surrounded by the chain line in the figures denotes one tap cell region which may be equal in size to a memory cell region.
FIG. 16
As in the memory cell region in which the wells (P-well, N-well, P-well) extend in the Y direction, in the tap cell shown in the wells also extend in the Y direction, in which the p-type well (P-well), n-type well (N-well), and p-type well (P-well) are arranged side by side in the X direction.
In the tap cell region, three active regions AcS for power supply are arranged side by side in the X direction. The area between active regions AcS is an element isolation region (STI).
Specifically, each active region AcS is an exposed region of a well (P-well, N-well, P-well) and in this case, it is virtually rectangular with its long side in the X direction. The three active regions AcS are arranged in a line extending in the X direction.
FIG. 16
FIG. 17
FIG. 17
1
1
1
2
1
2
2
2
3
2
3
3
Over the left p-type well (P-well) in , first plugs P are disposed over the active region AcS and a first layer wiring M is disposed over the first plugs P. A second plug P is disposed over the first layer wiring M. A second layer wiring M (LVSS) is disposed over the second plug P (). This second layer wiring M (LVSS) is the grounding voltage line described above in the “Memory Cell Pattern Layout” section. Furthermore, in the tap cell region, a third plug P is disposed over the second layer wiring M (LVSS) and a third layer wiring M (CVSS) is disposed over it. This third layer wiring. M (CVSS) is a common grounding voltage line which is coupled to the grounding voltage lines of the tap cells arranged in the X direction ().
1
1
1
2
1
2
2
2
3
2
3
3
FIG. 17
FIG. 17
Over the n-type well (N-well), first plugs P are disposed over the active region AcS and a first layer wiring M is disposed over the first plugs P. A second plug P is disposed over the first layer wiring M. A second layer wiring M (LVDD) is disposed over the second plug P (). This second layer wiring M (LVDD) is the supply voltage line described above in the “Memory Cell Pattern Layout” section. Furthermore, in the tap cell region, a third plug P is disposed over the second layer wiring M (LVDD) and a third layer wiring M (CVDD) is disposed over it. This third layer wiring M (CVDD) is a common supply voltage line which is coupled to the grounding voltage lines of the tap cells arranged in the X direction ().
FIG. 16
FIG. 17
FIG. 17
1
1
1
2
1
2
2
2
3
2
3
3
Over the right p-type well (P-well) in , first plugs P are disposed over the active region AcS and a first layer wiring M is disposed over the first plugs P. A second plug P is disposed over the first layer wiring M. A second layer wiring M (LVSS) is disposed over the second plug P (). This second layer wiring M (LVSS) is the grounding voltage line described above in the “Memory Cell Pattern Layout” section. Furthermore, in the tap cell region, a third plug P is disposed over the second layer wiring M (LVSS) and a third layer wiring M (CVSS) is disposed over it. This third layer wiring M (CVSS) is a common grounding voltage line which is coupled to the grounding voltage lines of the tap cells arranged in the X direction ().
2
2
FIG. 17
The bit lines (second layer wiring M (BL) and second layer wiring M (/BL)), described above in the “Memory Cell Pattern Layout” section, extend over the tap cell region ().
FIG. 16
As shown in , in the tap cell region, dummy gate electrodes (dummy gate wirings, dummy gates) DG extend in the X direction over element isolation regions STI. A dummy gate electrode is a conductive film which lies over an element isolation region (STI) and cannot work for transistor operation. This conductive film is made of the same material with the same process as the gate electrodes G.
FIG. 16
Due to the existence of these dummy gate electrodes DG, the gate electrode convex-concave profile is regularly repeated, leading to increased layout regularity. This reduces product quality instability and improves the device characteristics. The dummy gate electrodes DG are arranged in a linear form like a line extending in the X direction; in this embodiment, a separator area Sp is provided as appropriate to separate the dummy electrodes ().
FIG. 18
FIGS. 19 and 20
FIG. 19
FIG. 20
FIGS. 18 to 20
2
2
is a plan view schematically showing SRAM memory cells and tap cell regions according to this embodiment. are plan views showing how SRAM memory cells and tap cell regions are arranged according to this embodiment. shows the layout of the pattern for the lower layers up to the second plugs P and shows the layout of the pattern above the second plugs p. show 2×3 cell regions, in which the tap cells lie in the second lowest or center row in the figures.
FIGS. 18 to 20
As shown in , the dummy gate electrodes DG of each tap cell (F′) are located at both ends of the tap cell in the Y direction in a way to sandwich the active region (AcS). The dummy gate electrodes DG may extend in the X direction in a way to form a continuous line; however; in this embodiment, the dummy gate electrodes DG are cut or separated so as to be adjusted to the gate electrodes G of adjacent memory cells. Specifically, separator areas (Sp) are provided as appropriate. Since the dummy gate electrodes DG are arranged in this way, the regularity in the arrangement of the gate electrodes G and dummy gate electrodes DG is increased and device characteristics are improved.
1
3
1
3
The various patterns of the tap cell (for AcS, DG, P to P, M to M and so on) can be formed in the same way as those of the memory cell.
2
1
1
2
3
4
2
1
1
2
3
4
3
4
1
2
3
4
In the first embodiment, among the six active regions (AcP, AcP, AcN, AcN, AcP, and AcP) arranged side by side in the X direction, AcP and AcP in which the driver transistors TND and TND are located are equal in the X length (width in the X direction). Also, AcP and AcP in which the driver transistors TND and TND are located are equal in the X length (width in the X direction). However, it is also acceptable that they have different lengths (widths). The width in the X direction of these active regions (Ac) corresponds to the gate width of the relevant transistors. Specifically, in the first embodiment, the gate width of the driver transistor TND is equal to the gate width of the driver transistor TND and the gate width of the driver transistor TND is equal to the gate width of the driver transistor TND.
1
2
3
4
By contrast, in a second embodiment, the gate width of the driver transistor TND is different from the gate width of the driver transistor TND and the gate width of the driver transistor TND is different from the gate width of the driver transistor TND.
FIGS. 21 and 22
FIG. 21
FIG. 22
FIGS. 21 and 22
FIGS. 21 and 22
FIG. 4
1
1
1
2
1
2
2
3
3
are plan views showing the SRAM memory cell structure according to the second embodiment. shows the arrangement of active regions Ac, gate electrodes G, and first plugs P. shows the arrangement of the first plugs P, first layer wirings M, and second plugs P. When the plan views of are placed one upon the other with reference to the first plugs P, the positional relation between the patterns shown in becomes clear. The structure above the second plugs P, namely the arrangement of second layer wirings M, third plugs P, and third layer wirings M, is the same as that in the first embodiment which has been described referring to . The rectangular area surrounded by the chain line in the figures denotes one memory cell region (for 1 bit).
2
1
4
3
The memory cell structure is the same as in the first embodiment except the X lengths (widths in the X direction) of AcP and AcP and the X lengths (widths in the X direction) of AcP and AcP, so detailed description thereof is omitted.
FIG. 21
2
1
2
1
2
1
4
3
3
4
3
4
As shown in , the relation of WAcP<WacP may hold, where WAcP and WAcP denote the widths of the active regions AcP and AcP respectively. Also, the relation of WAcP<WacP may hold, where WAcP and WAcP denote the widths of the active regions AcP and AcP respectively.
1
2
3
4
1
2
2
1
4
3
Thus, in this embodiment, the driving performance ratio between the driver transistors (TND and TND or TND and TND) and the access transistor (TNA or TNA) can be easily controlled. In other words, the β ratio can be easily controlled simply by changing the widths of the active regions (AcP and AcP or AcP and AcP).
1
2
1
2
3
4
1
2
1
2
3
4
In the first embodiment, the ratio between the access transistor (TNA or TNA) gate width and the driver transistor gate width (the sum of the gate widths of TND and TND or the sum of the gate widths of TND and TND) is 1:2, but this ratio is adjusted according to the SRAM characteristics. It may be necessary to change the performance ratio between the access transistor and driver transistor depending on the type of device or application purpose; for example, there may be a case that reading performance should be better than writing performance. When the gate width of the access transistor (TNA or TNA) is expressed by “a” and the driver transistor gate width (the sum of the gate widths of TND and TND or the sum of the gate widths of TND and TND) is expressed by “b” and “a” is assumed to be 1, the value b can be easily adjusted to change the ratio of a:b (b/a is sometimes called “13 ratio”). Preferably, b/a is 1.1 or more and 3 or less, and more preferably it is 1.5 or more and 2.5 or less.
1
1
2
2
If b/a=1.1 and the gate width of the driver transistor TND and the gate width of the access transistor TNA are equal and both expressed by 1, theoretically the gate width of the driver transistor TND should be 0.1. This means that the gate width of TND is very small, which would cause a problem of pattern instability.
1
2
Therefore, the gate width of the driver transistors TND and TND should be 0.75 or so.
2
1
1
On the other hand, if b/a=1.5, the gate width of the driver transistor TND should be 0.5 and in that case it is possible to create the patterns. Alternatively, the gate width of the driver transistor TND and that of the access transistor NA can be almost equal.
1
1
2
If b/a=3 and the gate width of the access transistor TNA is 1, both the driver transistor TND and driver transistor TND may have a gate width of 1.5.
1
1
2
1
1
However, it is more preferable that the gate width of the access transistor TNA be 1 and the gate width of both the driver transistors TND and TND be 1.25 because the gate width difference between the access transistor TNA and driver transistor TND is smaller than in the above case of b/a=3.
1
2
2
4
Although the width of the other active regions (AcN, AcN) is not limited, in this embodiment their width is the same as the width of the active regions AcP and AcP.
2
1
4
3
1
3
2
4
Although the above relation in active region width may be reversed (WAcP>WAcP, WAcP>WAcP) to change the β ratio, product quality instability is lower and characteristics controllability is higher when the active regions AcP and AcP which each hold two transistors are larger than the active regions AcP and AcP.
1
1
1
2
FIG. 2
FIG. 22
FIG. 3
The arrangement of the gate electrodes G and first plugs P is the same as in the first embodiment () so description thereof is omitted. Also, the arrangement of the first plugs P, first layer wirings M, and second plugs P as shown in is the same as in the first embodiment (), so description thereof is omitted.
Therefore, this second embodiment brings about the above advantageous effects in addition to the same advantageous effects as those brought about by the first embodiment.
2
2
2
2
In the tap cell according to the first embodiment, the active region AcS over each p-type well (P-well) is coupled to the second layer wiring M (LVSS) and the active region AcS over the n-type well (N-well) is coupled to the second layer wiring M (LVDD). The second layer wiring M (LVSS) is the grounding voltage line described above in the “Memory Cell Pattern Layout” section and the second layer wiring M (LVDD) is the supply voltage line described above in the “Memory Cell Pattern Layout” section. In other words, in the first embodiment, power is supplied to the wells through the grounding voltage line and supply voltage line coupled to the memory cell, but instead, wirings (third voltage wiring) other than the grounding voltage line and supply voltage line may be used to supply power to the wells. In a third embodiment, second grounding voltage lines (LVSSB) are used to supply power to the p-type wells (P-well).
FIGS. 23 and 24
FIG. 23
FIG. 24
FIGS. 23 and 24
FIGS. 23 and 24
FIG. 18
1
1
2
2
2
3
3
2
are plan views showing the SRAM tap cell structure according to this embodiment. shows the arrangement of active regions AcS, dummy gate electrodes DG, first plugs P, first layer wirings M, and second plugs P. shows the arrangement of the second plugs P, second layer wirings M, third plugs P, and third layer wirings M. When the plan views of are placed one upon the other with reference to the second plugs P, the positional relation between the patterns shown in becomes clear. The rectangular area surrounded by the chain line in the figures denotes one tap cell region (equivalent to F′ in ) which may be equal in size to a memory cell region.
FIG. 23
Like the wells (P-well, N-well, P-well) extending in the Y direction in each memory cell region, the wells in the tap cell shown in extend in the Y direction, in which the p-type well (P-well), n-type well (N-well), and p-type well (P-well) are arranged side by side in the X direction.
In the tap cell region, three active regions AcS for power supply are arranged side by side in the X direction. An area between active regions AcS is an element isolation region (STI).
Specifically, each active region AcS is an exposed region of a well (P-well, N-well, P-well) and in this case, it is virtually rectangular with its long side in the X direction. The three active regions AcS are arranged in a line extending in the X direction.
FIG. 23
FIG. 23
FIG. 24
1
1
1
2
1
2
2
Over the left p-type well (P-well) in , first plugs P are disposed over the active region AcS and a first layer wiring. M is disposed over the first plugs P. A second plug P is disposed over the first layer wiring M (). A second layer wiring M (LVSSB) is located over the second plug P ().
2
3
2
3
3
FIG. 24
This second layer wiring M (LVSSB) is a second grounding voltage line which is different from the grounding voltage line described above in the “Memory Cell Pattern Layout” section. Furthermore, in the tap cell region, a third plug P is disposed over the second layer wiring M (LVSS) and a third layer wiring M is disposed over it. This third layer wiring M functions as a common second grounding voltage line which is coupled to the second grounding voltage lines of the tap cells arranged in the X direction ().
FIG. 23
1
1
1
2
1
2
2
Similarly, over the right p-type well (P-well) in , first plugs P are disposed over the active region AcS and a first layer wiring M is disposed over the first plugs P. A second plug P is disposed over the first layer wiring M. A second layer wiring M (LVSSB) is disposed over the second plug P.
2
3
2
3
3
FIG. 24
This second layer wiring M (LVSSB) is a second grounding voltage line which is different from the grounding voltage line described above in the “Memory Cell Pattern Layout” section. Furthermore, in the tap cell region, a third plug P is disposed over the second layer wiring M (LVSS) and a third layer wiring M is disposed over it. This third layer wiring M functions as the above common second grounding voltage line which is coupled to the second grounding voltage lines of the tap cells arranged in the X direction ().
1
1
2
2
2
3
2
3
3
FIGS. 24 and 17
As in the first embodiment, over the n-type well (N-well), first plugs P and a first layer wiring M are disposed over the active region AcS and a second layer wiring M (LVDD) is disposed through a second plug P. This second layer wiring M (LVDD) is the supply voltage line described above in the “Memory Cell Pattern Layout” section. Furthermore, in the tap cell region, a third plug P is disposed over the second layer wiring M (LVDD) and a third layer wiring M (CVDD) is disposed over it. This third layer wiring M (CVDD) is a common supply voltage line which is coupled to the grounding voltage lines of the tap cells arranged in the X direction ().
3
3
2
FIGS. 24 and 17
Furthermore, in the tap cell region, a common grounding voltage line (third layer wiring M (CVSS)) is disposed through the third plug P over the grounding voltage lines (second layer wirings M (LVSS) extending from the memory cell region ().
As explained above, in this embodiment, since power is supplied to each p-type well (P-well) through a wiring different from the grounding voltage line coupled to the memory cell, the fixed voltage (transistor back-gate voltage) of the p-type well (P-well) and the voltage of the grounding voltage line coupled to the memory cell can be specified separately.
For example, the voltage of the grounding voltage line coupled to the memory cell and the fixed voltage (transistor back-gate voltage) of the p-type well (P-well) can be set to about 0.1 V and 0 V respectively. When the fixed voltage of the p-type well is lower than the voltage of the grounding voltage line coupled to the memory cell like this, a back bias effect will occur, resulting in reduction in leakage current. When the grounding voltage line coupled to the memory cell and the wiring for power supply to the p-type well (P-well) are provided separately like this, fine adjustments of transistor characteristics can be made to improve the device characteristics.
FIG. 25
FIGS. 1 and 5
FIG. 25
2
1
1
3
2
4
is a circuit diagram showing the SRAM memory cell according to the third embodiment. The memory cell structure and circuit operation are the same as in the first embodiment. While the coupling arrangement of the transistors is the same as in the circuit diagrams shown in , the back-gate voltages of the transistors (TND, TNA, TND, TND, TNA, and TND) of the SRAM memory cell are different (VSSB in ).
FIG. 5
FIG. 25
2
1
1
3
2
4
1
2
2
1
1
3
2
4
1
2
Although not shown in (first embodiment), the back-gate voltage of the n-type transistors (TND, TNA, TND, TND, TNA, and TND) is the grounding voltage (VSS) and the back-gate voltage of the p-type transistors (TP and TP) is the supply voltage (VDD). On the other hand, in (third embodiment), the back-gate voltage of the n-type transistors (TND, TNA, TND, TND, TNA, and TND) is the second grounding voltage (VSSB). The back-gate voltage of the p-type transistors (TP and TP) is the supply voltage (VDD).
Although in this embodiment the grounding voltage line is provided separately, it is also possible that the supply voltage line is provided separately.
FIG. 16
FIG. 16
1
1
1
2
1
2
3
For example, over the same n-type well (N-well) as shown in , first plugs P are disposed over the active region AcS and a first layer wiring M is disposed over the first plugs P as in the first embodiment. A second plug P is disposed over the first layer wiring M and a second layer wiring M is disposed over it. This second layer wiring is located on the right of the same supply voltage line (LVDD) as shown in and functions as a secondary supply voltage line (LVDDB). In other words, the left one of the two second layer wirings is used as the supply voltage line (LVDD) and the right one is used as the secondary supply voltage line (LVDDB). Then, the supply voltage line (LVDD) and secondary supply voltage line (LVDDB) are coupled to different third layer wirings (common supply voltage line and common secondary supply voltage line) through the third plugs P respectively.
1
2
According to the above structure, the back-gate voltage of the p-type transistors (TP, TP) may be used as the secondary supply voltage (VDDB). For example, a latch-up phenomenon can be prevented by providing a p-type transistor with a relatively high conduction resistance between the secondary supply voltage line (LVDDB) and the supply voltage line (LVDD) coupled to the memory cell.
As discussed above, a second line for grounding voltage (VSS) may be added or a second line for supply voltage (VDD) may be added. It is needless to say that second lines may be added for both grounding voltage (VSS) and supply voltage (VDD).
2
1
1
2
3
4
2
1
3
4
FIG. 2
FIG. 26
Although six active regions (AcP, AcP, AcN, AcN, AcP, and AcP) are arranged side by side in the X direction in the order of mention () in the memory cell according to a first embodiment, it is also acceptable to exchange the positions of AcP and AcP and exchange the positions of AcP and AcP ().
FIGS. 26 to 28
FIG. 26
FIG. 27
FIG. 28
FIGS. 26 and 27
FIGS. 26 and 27
FIGS. 27 and 28
FIGS. 27 and 28
1
1
1
2
2
2
3
3
1
2
are plan views showing the SRAM memory cell structure according to the fourth embodiment. shows the arrangement of active regions Ac, gate electrodes G, and first plugs P. shows the arrangement of the first plugs P, first layer wirings M, and second plugs P. shows the arrangement of the second plugs P, second layer wirings M, third plugs P, and third layer wiring M. When the plan views of are placed one upon the other with reference to the first plugs P, the positional relation between the patterns shown in becomes clear. When the plan views of are placed one upon the other with reference to the second plugs P, the positional relation between the patterns shown in becomes clear. The rectangular area surrounded by the chain line in the figures denotes one memory cell region (for 1 bit).
FIG. 26
FIG. 26
FIGS. 12 to 14
As shown in , a p-type well (P-well), an n-type well (N-well) and a p-type well (P-well) are arranged side by side in the X direction over the semiconductor substrate. Although only one memory cell region (1 bit) is shown in , memory cells are repeatedly disposed in the X direction and Y direction (), so these wells (P-well, N-well, and P-well) are considered to continuously extend in the Y direction. The exposed regions of these wells are active regions (Ac).
1
2
1
2
4
3
Over the semiconductor substrate, six active regions are arranged side by side in the X direction. Unlike the first embodiment, in this embodiment the active regions are arranged in the following order: AcP, AcP, AcN, AcN, AcP, and AcP.
1
1
1
2
2
3
3
FIGS. 27 and 28
FIGS. 3 and 4
The other constituent elements (G, P and so on) are the same as in the first embodiment, so detailed description thereof is omitted. Also the arrangements of the first plugs P, first layer wirings M, second plugs P, second layer wirings M, third plugs P, and third layer wirings M as shown in are the same as those in the first embodiment as described above referring to , so detailed description thereof is omitted.
1
2
1
4
3
3
In this embodiment, concerning the locations of the virtually rectangular active regions AcP and AcP with their long sides in the Y direction in the memory cell region, AcP with the larger long side is remoter from the n-type well (N-well). Also, concerning the locations of the virtually rectangular active regions AcP and AcP with their long sides in the Y direction in the memory cell region, AcP with the larger long side is remoter from the n-type well (N-well). This reduces the well proximity effect.
The well proximity effect refers to a phenomenon that, for example, when a photoresist film is formed in a region other than a region doped with n-type impurities to prevent intrusion of n-type impurities for the formation of an n-type well, the n-type impurities implanted at an edge of the photoresist film (for example, an element isolation region STI) spreads to the gate electrode or source/drain region of an n-type transistor formed in the p-type well and causes deterioration in the characteristics of the n-type transistor. Similarly, the p-type transistor may be affected by p-type impurities for the formation of a p-type well. In other words, fluctuations in transistor characteristics are likely to occur in the boundary between an n-type well and a p-type well due to the well proximity effect and as the miniaturization of memory cells progresses, this problem becomes more serious.
1
3
In this embodiment, each active region with the larger long side, namely an active region in which a larger number of transistors are located (AcP and AcP), is remoter from the boundary between the n-type well (N-well) and p-type well (P-well) so that the well proximity effect is reduced and the transistor characteristics are improved.
FIG. 29
2
1
1
1
2
3
2
4
For reference, is a circuit diagram showing how the eight transistors (TND, TNA, TND, TP, TP, TND, TNA, TND) are arranged and interconnected in accordance with the above “Memory Cell Pattern Layout.”
FIG. 29
FIG. 29
1
2
As apparent from , each of the transistors TNA and TNA is remote from the boundary between the n-type well (N-well) and p-type well (P-well) (see the arrows in ).
1
2
Thus the well proximity effect is reduced and the transistor characteristics (for example, the characteristics of TNA and TNA) are improved.
Therefore, this fourth embodiment brings about the above advantageous effects in addition to the same advantageous effects as those brought about by the first embodiment.
1
1
Although in the memory cell according to the first embodiment, the first plugs P are disposed over the source/drain regions of the transistors and the gate electrodes G, and the wirings in the layers over the plugs are used to couple them, instead it is possible to use shared plugs (shared contacts) SP to couple them.
FIGS. 30 to 32
FIG. 30
FIG. 31
FIG. 32
FIGS. 30 and 31
FIGS. 30 and 31
FIGS. 31 and 32
FIGS. 31 and 32
1
1
1
1
1
2
2
2
3
3
1
1
2
are plan views showing the SRAM memory cell structure according to a fifth embodiment. shows the arrangement of active regions Ac, gate electrodes G, first plugs P, and shared first plugs SP. shows the arrangement of the first plugs P, shared first plugs SP, first layer wirings M, and second plugs P. shows the arrangement of the second plugs P, second layer wirings M, third plugs P, and third layer wiring M. When the plan views of are placed one upon the other with reference to the first plugs P and shared first plugs SP, the positional relation between the patterns shown in becomes clear. When the plan views of are placed one upon the other with reference to the second plugs P, the positional relation between the patterns shown in becomes clear. The rectangular area surrounded by the chain line in the figures denotes one memory cell region (for 1 bit).
1
1
The memory cell pattern layout according to the fifth embodiment is the same as in the first embodiment except the shared first plugs SP, so detailed description thereof is omitted and the shared plugs SP and their vicinities are explained in detail below.
FIG. 30
2
1
1
2
3
4
As shown in , in this embodiment, a p-type well (P-well), an n-type well (N-well), and a p-type well (P-well) are arranged side by side in the X direction as in the first embodiment. Also, six active regions (AcP, AcP, AcN, AcN, AcP, and AcP) are arranged side by side in the X direction. An element isolation region (STI) lies between active regions (Ac).
2
1
1
2
3
4
Gate electrodes G extend over the above six active regions (AcP, AcP, AcN, AcN, AcP, and AcP) through a gate insulating film (GO) in a way to cross the active regions in the X direction, as components of the eight transistors described earlier in the “Circuit Configuration” section in the description of the first embodiment.
1
2
1
1
2
2
1
1
1
1
2
1
1
1
1
1
1
Specifically, a common gate electrode G is disposed over the active regions AcP, AcP, and AcN in a way to cross them. Consequently, TND is disposed over the active region AcP, TND is disposed over the active region AcP, and TP is disposed over the active region AcN and their gate electrodes (G) are coupled to each other. Another gate electrode G is disposed over the active region AcP in parallel with the common gate electrode G. Consequently, TNA is disposed over the active region AcP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region).
3
4
3
2
4
4
3
3
2
2
4
3
3
2
3
2
3
Also, a common gate electrode G is disposed over the active regions AcP, AcP, and AcN in a way to cross them. Consequently, TND is disposed over the active region AcP, TND is disposed over the active region AcP, and TP is disposed over the active region AcN and their gate electrodes (G) are coupled to each other. Another gate electrode G is disposed over the active region AcP in parallel with the common gate electrode G. Consequently, TNA is disposed over the active region AcP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region).
1
2
1
1
4
3
3
4
3
2
2
1
The above four gate electrodes G are arranged in line on a basis of two electrodes per line. Specifically, the common gate electrode G overlying and crossing the active regions AcP, AcP, and AcN and the gate electrode G overlying the active region AcP are arranged in a line extending in the X direction. The common gate electrode G overlying and crossing the active regions AcP, AcP, and AcN and the gate electrode G overlying the active region AcP are arranged in a line extending in the X direction.
1
2
1
1
1
2
3
2
4
1
First plugs P are disposed over the source/drain regions of the eight transistors (TND, TNA, TND, TP, TP, TND, TNA, and TND). Also, first plugs P are disposed over the four gate electrodes.
1
2
1
1
2
1
1
1
3
2
3
4
A shared first plug SP as a continuous plug (monolithic plug) is disposed over one source/drain region of TP and the common gate electrode G of TP, TND, and TND. Also, a shared first plug SP as a continuous plug (monolithic plug) is disposed over one source/drain region of TP and the common gate electrode G of TP, TND, and TND.
1
The shared first plugs SP may be used in this way to couple a source/drain region and a gate electrode G electrically.
1
1
1
1
2
d
h
FIG. 2
FIG. 30
FIG. 2
Since the use of the shared first plugs SP eliminates the need for the first plugs Pand Pshown in , the distance between the active regions AcN and AcN can be decreased as shown in . Therefore, the memory cell area can be smaller than in the first embodiment ().
FIGS. 31 and 32
FIGS. 3 and 4
1
1
1
2
2
3
3
As shown in , the patterns in the layers over the first plugs P and shared first plugs SP, namely the arrangements of the first layer wirings M, second plugs P, second layer wirings M, third plugs P, and third layer wiring M, are almost the same as those in the first embodiment which have been described above referring to , so detailed description thereof is omitted here.
FIG. 33
2
1
1
1
2
3
2
4
For reference, is a circuit diagram showing how the eight transistors (TND, TNA, TND, TP, TP, TND, TNA, and TND) are arranged and interconnected in accordance with the above “Memory Cell Pattern Layout.”
FIG. 33
1
1
In , the encircled areas correspond to the couplings by the shared first plugs SP, indicating that a source/drain region and a gate electrode G are coupled using a continuous plug (shared first plug SP).
1
The memory cell area can be decreased by using the shared first plugs SP in this way.
Therefore, this fifth embodiment brings about the above advantageous effects in addition to the same advantageous effects as those brought about by the first embodiment.
While in the first embodiment the length of the virtually rectangular memory cell region's side extending in the Y direction (vertical length in the relevant figures) is equivalent to the sum of lengths (heights) of two transistors as described later, in a sixth embodiment the length of the virtually rectangular memory cell region's side extending in the Y direction is equivalent to the sum of lengths of four transistors. The length of one transistor means the sum of a1 and b1 (a1+b1) where a1 denotes the width of gate electrode in the Y direction and b1 denotes the distance between gate electrodes in the Y direction. For example, in the first embodiment, the length of the side of the memory cell region in the Y direction is expressed as 2(a1+b1), or equivalent to the sum of lengths of two transistors (see FIG. 2). In this sixth embodiment, the length of the side of the memory cell region in the Y direction is expressed as 4(a1+b1).
In other words, while in the first embodiment two rows (lines) of gate electrodes G are disposed, in this embodiment four rows (lines) of gate electrodes G are disposed.
FIG. 1
The SRAM memory cell structure and circuit operation in this embodiment are the same as those in the first embodiment which have been described referring to .
FIGS. 34 to 36
FIG. 34
FIG. 35
FIG. 36
FIGS. 34 and 35
FIGS. 34 and 35
FIGS. 35 and 36
FIGS. 35 and 36
1
1
1
2
2
2
3
3
1
2
are plan views showing the SRAM memory cell structure according to the sixth embodiment. shows the arrangement of active regions A, gate electrodes G, and first plugs P. shows the arrangement of the first plugs P, first layer wirings M, and second plugs P. shows the arrangement of the second plugs P, second layer wirings M, third plugs P, and third layer wiring M. When the plan views of are placed one upon the other with reference to the first plugs P, the positional relation between the patterns shown in becomes clear. When the plan views of are placed one upon the other with reference to the second plugs P, the positional relation between the patterns shown in becomes clear. The rectangular area surrounded by the chain line in the figures denotes one memory cell region (for 1 bit).
FIG. 34
FIG. 34
FIG. 12
As shown in , a p-type well (P-well), an n-type well (N-well), and a p-type well (P-well) are arranged side by side in the X direction over the semiconductor substrate. Although only one memory cell region (1 bit) is shown in , memory cells are repeatedly disposed in the X direction and Y direction (), so these wells (P-well, N-well, and P-well) are considered to continuously extend in the Y direction. The exposed regions of these wells are active regions (A).
1
2
Over the semiconductor substrate, three active regions (AP, AN, AP) are arranged side by side in the X direction. An element isolation region (STI) lies between active regions (A). In other words, the active regions (A) are marked out by the element isolation regions (STI). The wells (P-well, N-well, and P-well) are continuous with each other under the element isolation regions STI.
1
1
FIG. 34
FIG. 12
FIG. 34
Specifically, the active region AP is an exposed region of the p-type well (P-well) which is virtually rectangular with its long side in the Y direction. Although only one memory cell region (1 bit) is shown in for-illustration convenience, memory cells are repeatedly disposed in the X direction and Y direction () and in the memory cell array, the active region AP is continuous with an active region of an adjacent memory cell (in this case, a memory cell located below the memory cell region as seen in ).
The active region AN is an exposed region of the n-type well (N-well) which is virtually rectangular with its long side in the Y direction.
2
2
FIG. 12
FIG. 34
The active region AP is an exposed region of the p-type well (P-well) which is located on the right of the n-type well as seen in the figure and virtually rectangular with its long side in the Y direction. Memory cells are repeatedly disposed in the X direction and Y direction () and in the memory cell array, the active region AP is continuous with, an active region of an adjacent memory cell (in this case, a memory cell located above the memory cell region as seen in ).
1
2
Gate electrodes G extend over the three active regions (AP, AN, and AP) through a gate insulating film (GO) in a way to cross the active regions in the X direction, as components of the eight transistors as described earlier in the “Circuit Configuration” section in the description of the first embodiment.
1
3
1
2
2
3
2
2
3
1
1
2
1
1
2
1
3
2
4
3
1
3
Specifically, two common gate electrodes (G and G) are disposed over the active regions AP, AN, and AP in a way to cross the active regions. Consequently TND and TND are disposed in series over the active region AP, sharing a source/drain region and TND and TND are disposed in series over the active region P, sharing a source/drain region, and TP and TP are disposed in series over the active region AN, sharing a source/drain region. The gate electrodes (G) of TND, TP, and TND are joined into the common gate electrode G and the gate electrodes (G) of TND, TP, and TND are joined into the common gate electrode G. These two common gate electrodes (G and G) extend in the X direction in parallel with each other.
2
1
1
3
1
1
1
1
4
2
1
3
2
2
2
3
A gate electrode G is disposed over the active region AP in parallel with the two common gate electrodes G (G and G). Consequently, TNA is disposed over the active region AP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region). Also, another gate electrode G is disposed over the active region AP in parallel with the two common gate electrodes G (G and G). Consequently, TNA is disposed over the active region AP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region).
1
2
3
4
1
2
1
2
As mentioned above, in this embodiment, each driver transistor is divided into two transistors (TND and TND or TND and TND) and these transistors are located over different active regions (AP and AP). In addition, since these active regions (AP and AP) extend in the Y direction, the layout can be simplified and higher patterning accuracy can be achieved.
Therefore, as in the first embodiment, each active region (A) is not supposed to have a bent portion (stepped portion) and it is easy to make the gate width ratio between the access transistor and driver transistor 1:2.
1
2
Furthermore, since three transistors are also, disposed over each of the active regions (AP and AP), the number of active regions is decreased. This permits simpler layout and contributes to reduction in memory cell region size.
Furthermore, since the active regions (A) extend in the Y direction, the gate electrodes (G) can extend in the X direction so not only the patterning accuracy of the active regions (A) but also that of the gate electrodes (G) can be improved. Particularly, as detailed in connection with the first embodiment, it is easy to adopt the multiple exposure technique in order to enhance the patterning accuracy. In addition, it is easy to create a simulation model, thereby contributing to improvement in inspection accuracy.
FIG. 35
FIG. 34
FIG. 34
1
2
1
1
1
2
3
2
4
1
As shown in , first plugs P are disposed over the source/drain regions of the eight transistors (TND, TNA, TND, TP, TP, TND, TNA, and TND) described above referring to . Also, first plugs P are disposed over the four gate electrodes described referring to .
1
1
1
First layer wirings M are disposed over the first plugs P for electrical couplings between first plugs P.
1
2
1
1
1
1
1
1
3
2
3
4
1
1
2
1
FIG. 1
FIG. 34
Specifically, a first plug PA over one source/drain region of TND, a first plug PB over the common source/drain region of TND and TNA, a first plug PC over one source/drain region of TP, and a first plug PD over the common gate electrode (G) of TP, TND, and TND are coupled by a first layer wiring (first node wiring) MA. This first layer wiring MA corresponds to the storage node A shown in . In the above explanation, “one” means the lower source/drain region of each relevant transistor (TND, TP) as seen in .
4
1
3
2
1
2
1
1
1
1
2
1
1
4
2
FIG. 1
FIG. 34
A first plug PIE over one source/drain region of TND, a first plug PF over the common source/drain region of TND and TNA, a first plug PG over one source/drain region of TP, and a first plug PH over the common gate electrode (G) of TP, TND, and TND are coupled by a first layer wiring MB. This first layer wiring (second node wiring) MB corresponds to the storage node B shown in . In the above explanation, “one” means the upper source/drain region of each relevant transistor (TND, TP) as seen in .
1
1
2
1
1
1
Also a first layer wiring (pad region) MS is disposed over a first plug PI over the other source/drain region of TND. Also a first layer wiring MS is disposed over a first plug PJ over the other source/drain region of TND.
1
1
1
2
1
FIG. 1
Also a first layer wiring (pad region) MD is disposed over a first plug PK over the common source/drain region of TP and TP. This first layer wiring MD corresponds to the supply voltage (VDD) in and is coupled to a supply voltage line (LVDD) as described later.
1
1
1
1
2
First layer wirings MBL are disposed over a first plug PL over the other source/drain region of TNA, and a first plug PM over the other source/drain region of TNA respectively.
1
1
2
1
1
4
2
First layer wirings MW are disposed over a first plug PN over the gate electrode (G) of TNA, and a first plug PO over the gate electrode (G) of TNA respectively.
1
1
1
The couplings between first plugs P by the first layer wirings M may be modified in various ways as far as the interconnection structure shown in the circuit diagram of FIG. is satisfied.
FIG. 36
FIG. 35
22
1
1
1
1
1
2
As shown in , second plugs are disposed over the first layer wirings M, among the first layer wirings M described above referring to , other than the first layer wirings M (MA and MB) corresponding to the storage nodes (A and B), and second layer wirings M are disposed over them.
1
2
1
2
2
1
4
2
2
2
2
3
2
3
3
3
Specifically, the first layer wiring MW coupled to the gate electrode (G) of TNA is coupled to a second layer wiring MW through a second plug P. The first layer wiring MW coupled to the gate electrode (G) of TNA is coupled to a second layer wiring MW through a second plug P. These two second layer wirings MW extend in the Y direction at the ends of the memory cell region in the X direction. Furthermore, third plugs P are disposed over the two second layer wirings MW and a third layer wiring M (WL) extends in the X direction so as to couple the two third plugs P. This third layer wiring M (WL) is a word line.
1
1
2
3
2
2
2
1
1
1
4
2
2
2
2
The first layer wiring (pad region) MS coupled to the common source/drain region (PI) of TND and TND is coupled to a second layer wiring M (LVSS) through a second plug P. This second layer wiring M (LVSS) is a grounding voltage line. The first layer wiring (pad region) MS coupled to the common source/drain region (PJ) of TND and TND is coupled to a second layer wiring M (LVSS) through a second plug P. This second layer wiring M (LVSS) is a grounding voltage line. These two grounding voltage lines extend in the Y direction between the above two second layer wirings M located at the ends of the memory cell region.
1
1
2
2
2
1
2
2
2
2
The first layer wiring MBL coupled to the other source/drain region of TNA is coupled to a second layer wiring M (BL) through a second plug P. This second layer wiring M (BL) is one bit line of the bit line pair. The first layer wiring MBL coupled to the other source/drain region of TNA is coupled to a second layer wiring M (/BL) through a second plug P. This second layer wiring M (/BL) is the other bit line of the bit line pair. These two bit lines (BL, /BL) extend in the Y direction between the two grounding voltage lines (LVSS).
1
1
1
2
2
2
2
The first layer wiring (pad region) MD coupled to the common source/drain region (PK) of TP and TP is coupled to a second layer wiring M (LVDD) through a second plug P. This second layer wiring M (LVDD) is a supply voltage line.
2
2
3
3
2
3
FIG. 1
FIGS. 34 to 36
The couplings of the second plugs P, second layer wirings M, third plugs P, and third layer wiring M may be modified in various ways as far as the interconnection structure shown in the circuit diagram of is satisfied. However, it should be noted that the layout can be simplified when the second layer wirings M generally extend in the Y direction and the third layer wiring M generally extends in the X direction as mentioned above. Although only one memory cell region (1 bit) is shown in for illustration convenience, memory cells are repeatedly disposed in the X direction and Y direction as described later, so in the memory cell array, the grounding voltage lines (LVSS), bit lines (BL, /BL) and supply voltage lines (LVDD) extend in the Y direction and the word lines (WL) extend in the X direction.
2
2
In this embodiment, since each grounding voltage line (LVSS) lies between a second layer wiring MW (second layer wiring coupled to a word line) and a bit line (BL, /BL), interaction (crosstalk noise) between the second layer wiring MW (second layer wiring coupled to the word line) and the bit line (BL, /BL) is reduced due to the shielding effect of the grounding voltage line (LVSS) BL, /BL).
FIGS. 34 to 36
The patterns described above referring to are symmetrical with respect to the center point of the memory cell region.
FIG. 37
2
1
1
1
2
3
2
4
For reference, is a circuit diagram showing how the eight transistors (TND, TNA, TND, TP, TP, TND, TNA, and TND) are arranged and interconnected in accordance with the above “Memory Cell Pattern Layout.”
FIG. 12
In the SRAM memory cell array according to this embodiment, memory cells are arranged in an array pattern as in the first embodiment. As explained earlier in connection with the first embodiment referring to , memory cell regions (“F”) are repeatedly disposed axially symmetrically with respect to each line extending in the X direction and repeatedly disposed axially symmetrically with respect to each line extending in the Y direction.
The SRAM memory cell array according to this embodiment includes tap cell regions as in the first embodiment. Prescribed voltages (for example, grounding voltage VSS and supply voltage VDD) are supplied to the wells through the tap cell regions.
FIG. 34
FIG. 38
While in the sixth embodiment a p-type well (P-well), an n-type well (N-well), and a p-type well (P-well) are arranged side by side in the X direction in the order of mention (), it is also possible that both the p-type wells (P-well) are located on one side of the n-type well (N-well) instead of being located on both sides ().
As in the sixth embodiment, in a seventh embodiment the length of the virtually rectangular memory cell region's side extending in the Y direction is equivalent to the sum of lengths of four transistors. In other words, four rows (lines) of gate electrodes G are disposed in this embodiment.
FIG. 1
The SRAM memory cell structure and circuit operation in this embodiment are the same as those in the first embodiment which have been described referring to .
FIGS. 38 to 40
FIG. 38
FIG. 39
FIG. 40
FIGS. 38 and 39
FIGS. 38 and 39
FIGS. 39 and 40
FIGS. 39 and 40
1
1
1
2
2
2
3
3
1
2
are plan views showing the SRAM memory cell structure according to the seventh embodiment. shows the arrangement of active regions A, gate electrodes G, and first plugs P. shows the arrangement of the first plugs P, first layer wirings M, and second plugs P. shows the arrangement of the second plugs P, second layer wirings M, third plugs P, and third layer wiring M. When the plan views of are placed one upon the other with reference to the first plugs P, the positional relation between the patterns shown in becomes clear. When the plan views of are placed one upon the other with reference to the second plugs P, the positional relation between the patterns shown in becomes clear. The rectangular area surrounded by the chain line in the figures denotes one memory cell region (for 1 bit).
FIG. 38
FIG. 38
FIG. 12
As shown in , an n-type well (N-well) and a p-type well (P-well) are arranged side by side in the X direction over the semiconductor substrate. Although only one memory cell region (1 bit) is shown in , memory cells are repeatedly disposed in the X direction and Y direction (), so both the wells (N-well and P-well) are considered to continuously extend in the Y direction. The exposed regions of these wells are active regions (A).
1
2
Over the semiconductor substrate, three active regions (AN, AP, AP) are arranged side by side in the X direction. An element isolation region (STI) lies between active regions (A). In other words, the active regions (A) are marked out by the element isolation regions (STI). The wells (N-well and P-well) are continuous with each other under the element isolation regions STI.
Specifically, the active region AN is an exposed region of the n-type well (N-well) which is virtually rectangular with its long side in the Y direction.
1
1
FIG. 38
FIG. 38
The active region AP is an exposed region of the p-type well (P-well) located on the right of the n-type well as seen in which is virtually rectangular with its long side in the Y direction. Although only one memory cell region (1 bit) is shown in for illustration convenience, memory cells are repeatedly disposed in the X direction and Y direction, so in the memory cell array, the active region AP is considered to continuously extend in the Y direction in a linear form.
2
1
The active region AP is an exposed region of the p-type well (P-well) which is located next to the active region AP and virtually rectangular with its long side in the Y direction.
1
2
Gate electrodes G extend over the three active regions (AN, AP, and AP) through a gate insulating film (GO) in a way to cross the active regions in the X direction, as components of the eight transistors as described earlier in the “Circuit Configuration” section in the description of the first embodiment.
1
3
1
2
2
4
2
1
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1
1
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1
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1
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3
Specifically, two common gate electrodes (G and G) are disposed over the active regions AN, AP, and AP in a way to cross the active regions. Consequently TND and TND are disposed in series over the active region AP, sharing a source/drain region, TND and TND are disposed in series over the active region AP, sharing a source/drain region, and TP and TP are disposed in series over the active region AN, sharing a source/drain region. The gate electrodes (G) of TP, TND, and TND are joined into the common gate electrode G and the gate electrodes (G) of TP, TND, and TND are joined into the other common gate electrode G. These two common gate electrodes G extend in parallel with each other in the X direction.
2
1
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1
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1
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3
A gate electrode G is disposed over the active region AP in parallel with the two common gate electrodes G (G and G). Consequently, TNA is disposed over the active region AP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region). Also, another gate electrode G is disposed over the active region AP in parallel with the two common gate electrodes G. Consequently, TNA is disposed over the active region AP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region).
1
2
3
4
1
2
1
2
As mentioned above, in this embodiment, each driver transistor is divided into two transistors (TND and TND, and TND and TND) and these transistors are located over different active regions (AP and AP). In addition, since these active regions (AP and AP) extend in the Y direction, the layout can be simplified and higher patterning accuracy can be achieved.
Therefore, as in the first embodiment, each active region (A) is not supposed to have a bent portion (stepped portion) and it is easy to make the gate width ratio between the access transistor and driver transistor 1:2.
1
2
1
1
2
1
1
2
1
2
Also, since the access transistors (TNA and TNA) are also disposed over the active region AP, the number of active regions is decreased. Although in this case the two access transistors (TNA and TNA) are disposed over the active region AP, instead one access transistor may be disposed over each of the active regions AP and AP. In this way, other n-type transistors may be disposed in appropriate places over the active regions (AP and AP in this case) in each of which a driver transistor is located. Consequently the number of active regions can be decreased. This permits simpler layout and contributes to reduction in memory cell region size.
Furthermore, since the active regions (A) extend in the Y direction, the gate electrodes (G) can extend in the X direction so not only the patterning accuracy of the active regions (A) but also that of the gate electrodes (G) can be improved. Particularly, as detailed in connection with the first embodiment, it is easy to adopt the multiple exposure technique in order to enhance the patterning accuracy. In addition, it is easy to create a simulation model, thereby contributing to improvement in inspection accuracy.
FIG. 39
FIG. 38
FIG. 38
1
2
1
1
1
2
3
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4
1
As shown in , first plugs P are disposed over the source/drain regions of the eight transistors (TND, TNA, TND, TP, TP, TND, TNA, and TND) described above referring to . Also, first plugs P are disposed over the four gate electrodes described referring to .
1
1
1
First layer wirings M are disposed over the first plugs P for electrical couplings between first plugs P.
1
2
1
1
1
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3
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4
1
1
2
1
FIG. 1
FIG. 38
Specifically, a first plug PA over one source/drain region of TND, a first plug PB over the common source/drain region of TND and TNA, a first plug PC over one source/drain region of TP, and a first plug PD over the common gate electrode (G) of TP, TND, and TND are coupled by a first layer wiring MA. This first layer wiring (first node wiring) MA corresponds to the storage node A shown in . In the above explanation, “one” means the lower source/drain region of each relevant transistor (TND, TP) as seen in .
4
1
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2
FIG. 1
FIG. 38
A first plug PIE over one source/drain region of TND, a first plug PF over the common source/drain region of TND and TNA, a first plug PG over one source/drain region of TP, and a first plug PH over the common gate electrode (G) of TP, TND, and TND are coupled by a first layer wiring (second node wiring) MB. This first layer wiring MB corresponds to the storage node B shown in . In the above explanation, “one” means the upper source/drain region of each relevant transistor (TND, TP) as seen in .
1
2
4
1
1
3
1
1
FIG. 1
Also a first plug PP over the common source/drain region of TND and TND and a first plug PQ over the common source/drain region of TND and TND are coupled by a first layer wiring MS. This first layer wiring MS corresponds to the grounding voltage (VSS) in and is coupled to a grounding voltage line (LVSS) as described later.
1
1
1
2
1
FIG. 1
Also a first layer wiring MD is disposed over a first plug PR over the common source/drain region of TP and TP. This first layer wiring MD corresponds to the supply voltage (VDD) in and is coupled to a supply voltage line (LVDD) as described later.
1
1
1
2
1
2
1
1
4
2
1
First layer wirings MBL are disposed over a first plug PS over the other source/drain region of TNA, and a first plug PIT over the other source/drain region of TNA respectively. A first plug PU over the gate electrode (G) of TNA and a first plug PV over the gate electrode (G) of TNA are coupled by a first layer wiring MW.
1
1
FIG. 1
The couplings between first plugs P by the first layer wirings M may be modified in various ways as far as the interconnection structure shown in the circuit diagram of is satisfied.
FIG. 40
FIG. 39
2
1
1
1
1
1
2
As shown in , second plugs P are disposed over the first layer wirings M, among the first layer wirings M described above referring to , other than the first layer wirings M (MA and MB) corresponding to the storage nodes (A and B), and second layer wirings M are disposed over them.
1
2
1
4
2
2
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2
3
3
3
Specifically, the first layer wiring MW coupled to the gate electrode (G) of TNA and the gate electrode (G) of TNA is coupled to a second layer wiring MW through a second plug P. This second layer wiring MW extends in the Y direction at an end of the memory cell region in the X direction. Furthermore, a third plug P is disposed over the second layer wiring MW and a third layer wiring M (WL) extending in the X direction is disposed over the third plug P. This third layer wiring M (WL) is a word line.
1
1
1
2
2
2
The first layer wiring MBL coupled to the other source/drain region (PS) of TNA is coupled to a second layer wiring M (BL) through a second plug P. This second layer wiring M (BL) is one bit line of the bit line pair.
1
1
2
2
2
2
The first layer wiring MBL coupled to the other source/drain region (PT) of TNA is coupled to a second layer wiring M (/BL) through a second plug P. This second layer wiring M (/BL) is the other bit line of the bit line pair. These two bit lines (BL, /BL) extend in the Y direction.
1
1
2
4
1
1
3
2
2
2
The first layer wiring MS coupled to the common source/drain region (PP) of TND and TND and the common source/drain region (PQ) of TND and TND is coupled to a second layer wiring M (LVSS) through a second plug P. This second layer wiring M (LVSS) is a grounding voltage line. This grounding voltage line extends in the Y direction between the two bit lines (BL and /BL).
1
1
1
2
2
2
The first layer wiring MD coupled to the common source/drain region (PR) of TP and TP is coupled to a second layer wiring M (LVDD) through a second plug. This second layer wiring M (LVDD) is a supply voltage line.
2
2
3
3
2
3
FIG. 1
FIGS. 38 to 40
The couplings of the second plugs P, second layer wirings M, third plugs P, and third layer wiring M may be modified in various ways as far as the interconnection structure shown in the circuit diagram of is satisfied. However, it should be noted that the layout can be simplified when the second layer wirings M generally extend in the Y direction and the third layer wiring M generally extends in the X direction as mentioned above. Although only one memory cell region (1 bit) is shown in for illustration convenience, memory cells are repeatedly disposed in the X direction and Y direction as described later, so in the memory cell array, the grounding voltage lines (LVSS), bit lines (BL, /BL) and supply voltage lines (LVDD) extend in the Y direction and the word lines (WL) extend in the X direction.
In this embodiment, since the grounding voltage line (LVSS) lies between the bit lines (BL, /BL), interaction (crosstalk noise) between the bit lines (BL, /BL) is reduced due to the shielding effect of the grounding voltage line (LVSS).
FIG. 34
Furthermore, in this embodiment, since the p-type well (P-well) is located on one side of the n-type well (N-well) in the memory cell region, the number of boundaries between the n-type well (N-well) and p-type well (P-well) is smaller than in the sixth embodiment () and the well proximity effect as mentioned above is reduced.
FIG. 41
2
1
1
1
2
3
2
4
For reference, is a circuit diagram showing how the eight transistors (TND, TNA, TND, TP, TP, TND, TNA, and TND) are arranged and interconnected in accordance with the above “Memory Cell Pattern Layout.”
FIG. 12
In the SRAM memory cell array according to this embodiment, memory cells are arranged in an array pattern as in the first embodiment. As explained earlier in connection with the first embodiment referring to , memory cell regions (“F”) are repeatedly disposed axially symmetrically with respect to each line extending in the X direction and repeatedly disposed axially symmetrically with respect to each line extending in the Y direction.
The SRAM memory cell array according to this embodiment includes tap cell regions as in the first embodiment. Prescribed voltages (for example, grounding voltage VSS and supply voltage VDD) are supplied to the wells through the tap cell regions.
FIG. 15
FIG. 15
The SRAM memory cell array in this embodiment includes tap cells (F′) as in the first embodiment (). Tap cells (F′) are provided on the basis of one tap cell per n memory cell regions arranged in the Y direction and repeatedly disposed in the X direction axially symmetrically with respect to each line extending in the Y direction. In , the tap cells arranged in X direction are each expressed by “F′.”
FIGS. 42 and 43
FIG. 42
FIG. 43
FIGS. 42 and 43
FIGS. 42 and 43
1
1
2
2
2
3
3
2
are plan views showing the structure of the SRAM tap cell (F′) according to this embodiment. shows the arrangement of active regions AcS, dummy gate electrodes DG, first plugs P, first layer wirings M, and second plugs P. shows the arrangement of the second plugs P, second layer wirings M, third plugs P, and third layer wirings M. When the plan views of are placed one upon the other with reference to the second plugs P, the positional relation between the patterns shown in becomes clear. The rectangular area surrounded by the chain line in the figures denotes one tap cell region which may be equal in size to a memory cell region.
FIG. 42
As in the memory cell region in which the wells (N-well, P-well) extend in the Y direction, in the tap cell shown in the wells also extend in the Y direction, in which the n-type well (N-well) and p-type well (P-well) are arranged side by side in the X direction.
In the tap cell region, two active regions AcS for power supply are arranged side by side in the X direction. The area between these active regions AcS is an element isolation region (STI).
Specifically, each active region AcS is an exposed region of a well (P-well, N-well) and in this case, it is virtually rectangular with its long side in the X direction. The two active regions AcS are arranged in a line extending in the X direction.
FIG. 42
FIG. 43
1
1
1
2
1
2
2
2
3
2
3
3
Over the p-type well (P-well) on the right in , first plugs P are disposed over the active region AcS and a first layer wiring M is disposed over the first plugs P. A second plug P is disposed over the first layer wiring M. A second layer wiring M (LVSS) is disposed over the second plug P. This second layer wiring M (LVSS) is the grounding voltage line described above in the “Memory Cell Pattern Layout” section. Furthermore, in the tap cell region, a third plug P is disposed over the second layer wiring M (LVSS) and a third layer wiring M (CVSS) is disposed over it. This third layer wiring M (CVSS) is a common grounding voltage line which is coupled to the grounding voltage lines of the tap cells arranged in the X direction ().
FIG. 42
FIG. 43
1
1
1
2
1
2
2
2
3
2
3
3
Over the n-type well (N-well) on the left in , a first plug P is disposed over the active region AcS and a first layer wiring M is disposed over the first plug P. A second plug P is disposed over the first layer wiring M. A second layer wiring M (LVDD) is disposed over the second plug P. This second layer wiring M (LVDD) is the supply voltage line described above in the “Memory Cell Pattern Layout” section. Furthermore, in the tap cell region, a third plug P is disposed over the second layer wiring M (LVDD) and a third layer wiring M (CVDD) is disposed over it. This third layer wiring M (CVDD) is a common supply voltage line which is coupled to the grounding voltage lines of the tap cells arranged in the X direction ().
2
2
FIG. 43
The bit lines (second layer wiring M (BL) and second layer wiring M (/BL)) described above in the “Memory Cell Pattern Layout” section extend over the tap cell region ().
FIG. 42
As shown in , in the tap cell region, dummy gate electrodes DG extend in the X direction over an element isolation region STI. Due to the existence of these dummy gate electrodes DG, the gate electrode convex-concave profile is regularly repeated, leading to increased layout regularity. This reduces product quality instability and improves the device characteristics.
1
2
1
2
FIG. 38
FIG. 44
According to the seventh embodiment, three active regions AN, AP, and AP, are arranged side by side in the X direction in the order of mention in the memory cell (). However, it is acceptable to exchange the positions of AP and AP ().
FIGS. 44 to 46
FIG. 44
FIG. 45
FIG. 46
FIGS. 44 and 45
FIGS. 44 and 45
FIGS. 45 and 46
FIGS. 45 and 46
1
1
1
2
2
2
23
3
1
2
are plan views showing the SRAM memory cell structure according to an eighth embodiment. shows the arrangement of active regions A, gate electrodes G, and first plugs P. shows the arrangement of the first plugs P, first layer wirings M, and second plugs P. shows the arrangement of the second plugs P, second layer wirings M, third plugs , and third layer wiring M. When the plan views of are placed one upon the other with reference to the first plugs P, the positional relation between the patterns shown in becomes clear. When the plan views of are placed one upon the other with reference to the second plugs P, the positional relation between the patterns shown in becomes clear. The rectangular area surrounded by the chain line in the figures denotes one memory cell region (for 1 bit).
FIG. 44
FIG. 44
FIG. 12
As shown in , an n-type well (N-well) and a p-type well (P-well) are arranged side by side in the X direction over the semiconductor substrate. Although only one memory cell region (1 bit) is shown in , memory cells are repeatedly disposed in the X direction and Y direction () as mentioned above, so these wells (N-well and P-well) are considered to continuously extend in the Y direction. The exposed regions of these wells are active regions (A).
2
1
Over the semiconductor substrate, three active regions are arranged side by side in the X direction. Unlike the seventh embodiment, in this embodiment the active regions are arranged in the following order: AN, AP, and AP.
1
1
1
2
2
3
3
FIGS. 45 and 46
FIGS. 39 and 40
The other constituent elements (G, P and so on) are the same as in the seventh embodiment, so detailed description thereof is omitted. Also the arrangements of the first plugs P, first layer wirings M, second plugs P, second layer wirings M, third plugs P, and third layer wiring M as shown in are the same as those in the seventh embodiment as described above referring to , so detailed description thereof is omitted.
1
1
In this embodiment, the active region AP, extending linearly in the Y direction, is remoter from the boundary between the n-type well (N-well) and p-type well (P-well) in the memory cell region. Namely, the active region in which the larger number of transistors are located are remoter from the boundary between the n-type well (N-well) and p-type well (P-well). Consequently, the distance between the active region AP and the boundary between the n-type well (N-well) and p-type well (P-well) is increased, so the well proximity effect as mentioned above is reduced. As a result, the transistor characteristics are improved.
FIG. 47
2
1
1
1
2
3
2
4
For reference, is a circuit diagram showing how the eight transistors (TND, TNA, TND, TP, TP, TND, TNA, and TND) are arranged and interconnected in accordance with the above “Memory Cell Pattern Layout.”
FIG. 47
FIG. 47
1
2
As apparent from , the transistors TNA and TNA are remoter from the boundary between the n-type well (N-well) and p-type well (P-well) (see the arrows in ).
1
2
This reduces the well proximity effect and improves the transistor characteristics (for example, the characteristics of TNA and TNA).
This eighth embodiment brings about the above advantageous effects in addition to the same advantageous effects as those brought about by the first embodiment.
FIG. 1
FIG. 48
While the first embodiment concerns a single-port SRAM (), the ninth embodiment concerns a dual-port SRAM ().
FIG. 48
FIG. 1
is an equivalent circuit diagram showing the SRAM memory cell according to a ninth embodiment. Unlike the equivalent circuit () according to the first embodiment, this equivalent circuit includes two pairs of bit lines (BLA and /BLA, BLB and /BLB) and two word lines (WLA, WLB).
FIG. 48
1
2
1
3
2
4
2
4
As shown in , the memory cell is located at the intersection of the two pairs of bit lines and the two word lines. The memory cell includes a pair of load transistors (load MOSs, load transistors, or load MISFETs) TP and TP, two pairs of access transistors (access MOSs, access transistors, access MISFETs, or transfer transistors) TNA and TNA, TNA and TNA, and a pair of driver transistors (driver MOSs or driver MISFETs) TND and TND.
1
2
3
4
This embodiment has a driver transistor TND coupled in parallel with the driver transistor (driver MISFET) TND. It also has a driver transistor TND coupled in parallel with the driver transistor (driver MISFET) TND.
Among the transistors of the memory cell, the load transistors are p type (p-channel) transistors and the access transistors and driver transistors are n-type (n-channel) transistors.
2
1
4
2
Among the ten transistors of the memory cell, TND and TP make up a CMOS inverter and TND and TP make up another CMOS inverter. The input/output terminals (storage nodes A and B) of this pair of CMOS inverters are cross-coupled, making up a flip-flop circuit as a data memory which stores data for one bit.
1
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1
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2
In the SRAM memory cell according to this embodiment, since TND and TND are disposed in parallel with TND and TND respectively, it can be considered that TND, TND, and TP make up a CMOS inverter and TND, TND, and TP make up another CMOS inverter.
The interconnection arrangement of the ten transistors of the SRAM memory cell according to this embodiment is explained in detail below.
1
1
2
1
1
2
TP is coupled between the supply voltage (primary voltage) and the storage node A and TND and TND are coupled in parallel with each other between the storage node A and grounding voltage (reference voltage, secondary voltage lower than the primary voltage), and the gate electrodes of TP, TND, and TND are coupled to the storage node B.
2
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4
2
3
4
TP is coupled between the supply voltage (primary voltage) and the storage node B and TND and TND are coupled in parallel with each other between the storage node B and grounding voltage (reference voltage, secondary voltage lower than the primary voltage), and the gate electrodes of TP, TND, and TND are coupled to the storage node A.
1
3
1
3
TNA is coupled between the bit line BLA and storage node A and TNA is coupled between the bit line/BLA and storage node B and the gate electrodes of TNA and TNA are coupled to a word line WLA.
2
4
2
4
TNA is coupled between the bit line BLB and storage node A and TNA is coupled between the bit line/BLB and storage node B and the gate electrodes of TNA and TNA are coupled to a word line WLB.
1
2
3
4
As mentioned above, in the SRAM memory cell according to this embodiment, each driver transistor is considered as being divided into two transistors (TND and TND, or TND and TND).
As mentioned above, the dual-port SRAM has two ports for data input and output signals, so while one port is used to read data, the other port can be used to write data, permitting high speed data processing.
FIGS. 49 to 51
FIG. 49
FIG. 50
FIG. 51
FIGS. 49 and 50
FIGS. 49 and 50
FIGS. 50 and 51
FIGS. 50 and 51
1
1
1
2
2
2
3
3
1
2
are plan views showing the SRAM memory cell structure according to the ninth embodiment. shows the arrangement of active regions Ac, gate electrodes G, and first plugs P. shows the arrangement of the first plugs P, first layer wirings M, and second plugs P. shows the arrangement of the second plugs P, second layer wirings M, third plugs P, and third layer wirings M. When the plan views of are placed one upon the other with reference to the first plugs P, the positional relation between the patterns shown in becomes clear. When the plan views of are placed one upon the other with reference to the second plugs P, the positional relation between the patterns shown in becomes clear. The rectangular area surrounded by the chain line in the figures denotes one memory cell region (for 1 bit).
FIG. 49
FIG. 49
FIG. 12
As shown in , a p-type well (P-well), an n-type well (N-well), and a p-type well (P-well) are arranged side by side in the X direction over the semiconductor substrate. Although only one memory cell region (1 bit) is shown in , memory cells are repeatedly disposed in the X direction and Y direction () as described later, so these wells (P-well, N-well and P-well) are considered to continuously extend in the Y direction. The exposed regions of these wells are active regions (Ac).
2
1
1
2
3
4
Over the semiconductor substrate, six active regions (AcP, AcP, AcN, AcN, AcP, and AcP) are arranged side by side in the X direction. An element isolation region (STI) lies between active regions (Ac). In other words, the active regions (Ac) are marked out by the element isolation regions (STI). The wells (P-well, N-well, and P-well) are continuous with each other under the element isolation regions STI.
2
1
2
1
2
FIG. 49
Specifically, the active region AcP is an exposed region of the p-type well (P-well) which is virtually rectangular with its long side in the Y direction. The active region AcP is located next to the active region AcP and is an exposed region of the p-type well (P-well) which is virtually rectangular with its long side in the Y direction. Although only one memory cell region (1 bit) is shown in for illustration convenience, memory cells are repeatedly disposed in the X direction and Y direction, so in the memory cell array, the active regions AcP and AcP are considered to continuously extend in the Y direction in a linear pattern.
1
2
The active region AcN is an exposed region of the n-type well (N-well) which is virtually rectangular with its long side in the Y direction. The active region AcN is an exposed region of the n-type well (N-well) which is virtually rectangular with its long side in the Y direction.
3
4
3
3
4
The active region AcP is an exposed region of the p-type well (P-well) which is located on the right of the n-type well as seen in the figure and virtually rectangular with its long side in the Y direction. The active region AcP is an exposed region of the p-type well (P-well) which is located next to the active region AcP and virtually rectangular with its long side in the Y direction. In the memory cell array, the active regions AcP and AcP extend in the Y direction linearly.
2
1
1
2
3
4
Gate electrodes G extend over the six active regions (AcP, AcP, AcN, AcN, AcP, and AcP) through a gate insulating film (GO) in a way to cross the active regions in the X direction, as components of the ten transistors as described above in the “Circuit Configuration” section.
1
2
1
1
2
1
1
2
1
1
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1
1
1
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2
b
a
Specifically, a common gate electrode G is located over the active regions AcP, AcP, and AcN in a way to cross them. Consequently TND, TND, and TP are disposed over the active region AcP, AcP, and AcN respectively and their gate electrodes (G) are coupled to each other. A gate electrode Gis disposed over the active region AcP in parallel with the common gate electrode G. Consequently, TNA is disposed over the active region AcP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region). Also, a gate electrode Gis disposed over the active region AcP in parallel with the common gate electrode G. Consequently, TNA is disposed over the active region AcP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region).
3
4
3
2
3
4
2
4
3
2
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3
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4
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b
a
Also, a common gate electrode G is disposed over the active regions AcP, AcP, and AcN in a way to cross them. Consequently TND, TND, and TP are disposed over the active regions AcP, AcP, and AcN respectively and their gate electrodes (G) are coupled to each other. A common gate electrode Gis disposed over the active region AcP in parallel with the common gate electrode G. Consequently, TNA is disposed over the active region AcP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region). Also, a common gate electrode Gis disposed over the active region AcP in parallel with the common gate electrode G. Consequently, TNA is disposed over the active region AcP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region).
1
2
1
1
4
3
4
4
3
4
3
2
2
1
2
2
b
a
b
a
The above six gate electrodes G are arranged in line on a basis of three electrodes per line. Specifically, the common gate electrode G overlying and crossing the active regions AcP, AcP, and AcN, the gate electrode Goverlying the active region AcP, and the gate electrode Goverlying the active region AcP are arranged in a line extending in the X direction. The common gate electrode G overlying and crossing the active regions AcP, AcP, and AcN, the gate electrode Goverlying the active region AcP, and the gate electrode Goverlying the active region AcP are arranged in a line extending in the X direction.
1
2
3
4
2
1
4
3
2
1
4
3
As mentioned above, in this embodiment, each driver transistor is divided into two transistors (TND and TND or TND and TND) which are located over different active regions (AcP and AcP or AcP and AcP). In addition, since these active regions (AcP and AcP or AcP and AcP) extend in the Y direction, the layout can be simplified and higher patterning accuracy can be achieved.
Therefore, as in the first embodiment, each active region (Ac) is not supposed to have a bent, portion (stepped portion) and it is easy to make the gate width ratio between the access transistor and driver transistor 1:2.
1
2
3
4
1
2
4
3
Also, since the access transistors (TNA, TNA, TNA, and TNA) are disposed in the active regions (AcP, AcP, AcP, and AcP) respectively, the number of active regions can be decreased. This permits simpler layout and contributes to reduction in memory cell region size.
Furthermore, since the active regions (Ac) extend in the Y direction, the gate electrodes (G) can extend in the X direction so not only the patterning accuracy of the active regions (Ac) but also that of the gate electrodes (G) can be improved. Particularly, as detailed in connection with the first embodiment, it is easy to adopt the multiple exposure technique in order to enhance the patterning accuracy. In addition, it is easy to create a simulation model, thereby contributing to improvement in inspection accuracy.
FIG. 50
FIG. 49
FIG. 49
1
2
2
1
1
1
2
4
4
3
3
1
As shown in , first plugs P are disposed over the source/drain regions of the ten transistors (TND, TNA, TNA, TND, TP, TP, TND, TNA, TND, and TNA) described above referring to . Also, first plugs P are disposed over the six gate electrodes described referring to .
1
1
1
First layer wirings M are disposed over the first plugs P for electrical couplings between first plugs P.
1
2
2
1
1
1
1
1
1
3
2
3
4
1
1
1
a
b
c
d
FIG. 48
FIG. 49
Specifically, a first plug Pover the common source/drain region of TND and TNA, a first plug Pover the common source/drain region of TND and TNA, a first plug Pover one source/drain region of TP, and a first plug Pover the common gate electrode G of TP, TND, and TND are coupled by a first layer wiring (first node wiring) MA. This first layer wiring MA corresponds to the storage node A shown in . In the above explanation, “one” means the upper, source/drain region of the relevant transistor (TP) as seen in .
1
3
3
1
4
4
1
2
1
1
1
2
1
1
1
1
1
2
e
f
g
h
FIG. 48
FIG. 49
A first plug Pover the common source/drain region of TND and TNA, a first plug Pover the common source/drain region of TND and TNA, a first plug Pover one source/drain region of TP, and a first plug Pover the common gate electrode G of TP, TND, and TND are coupled by a first layer wiring MB. This first layer wiring MB corresponds to the storage node B shown in . The first layer wiring M (MA or MB) corresponding to the storage node (A or B) generally extends in the X direction. In the above explanation, “one” means the lower source/drain region of the relevant transistor (TP) as seen in .
1
2
1
1
1
1
j
i
FIG. 48
A first plug Pover the other source/drain region of TND and a first plug Pover the other source/drain region of TND are coupled by a first layer wiring MS. This first layer wiring MS corresponds to the grounding voltage (VSS) in and is coupled to a grounding voltage line (LVSS) as described later.
1
3
1
4
1
1
k
m
FIG. 48
A first plug Pover the other source/drain region of TND and a first plug Pover the other source/drain region of TND are coupled by a first layer wiring MS. This first layer wiring MS corresponds to a grounding voltage (VSS) in and is coupled to a grounding voltage line (LVSS) as described later.
1
1
1
2
1
1
1
1
1
1
1
1
1
3
1
4
1
1
1
2
t
n
o
u
p
q
Also, first layer wirings M (MBL) are disposed over a first plug Pover the other source/drain region of TNA and a first plug Pover the other source/drain region of TNA, and a first layer wiring M (MD) is disposed over a first plug Pover the other source/drain region of TP. Also, first layer wirings M (MBL) are disposed over a first plug Pover the other source/drain region of TNA and a first plug Pover the other source/drain region of TNA and a first layer wiring M (MD) is disposed over a first plug Pover the other source/drain region of TP.
1
1
2
2
2
1
1
4
4
1
4
3
r
a
b
w
b
s
a
Also, first layer wirings MW are disposed over a first plug Pover the gate electrode (G) of TNA, a first plug Ply over the gate electrode (G) of TNA, a first plug Pover the gate electrode (G) of TNA, and a first plug Pover the gate electrode (G) of TNA respectively.
1
1
FIG. 48
The couplings between first plugs P by the first layer wirings M may be modified in various ways as far as the interconnection structure shown in the circuit diagram of is satisfied.
FIG. 51
FIG. 50
2
1
1
1
1
1
1
1
1
1
2
As shown in , second plugs P are disposed over the first layer wirings M (MS, MD, MW, and MBL), among the first layer wirings M described above referring to , other than the first layer wirings M (MA and MB) corresponding to the storage nodes (A and B), and second layer wirings M are disposed over them.
1
2
2
2
2
1
4
4
2
2
2
3
2
3
3
3
a
b
Specifically, the first layer wiring MW coupled to the gate electrode (G) of TNA is coupled to a second layer wiring MW through a second plug P. The first layer wiring MW coupled to the gate electrode (G) of TNA is coupled to a second layer wiring MW through a second plug P. These two second layer wirings MW extend in the Y direction in the memory cell region. Furthermore, third plugs P are disposed over the two second layer wirings MW and a third layer wiring M (WLB) extends in the X direction so as to couple the two third plugs P. This third layer wiring M (WLB) is a word line.
1
4
3
2
2
1
2
1
2
2
2
3
2
3
3
3
a
b
Specifically, the first layer wiring MW coupled to the gate electrode (G) of TNA is coupled to a second layer wiring MW through a second plug P. The first layer wiring MW coupled to the gate electrode (G) of TNA is coupled to a second layer wiring MW through a second plug P. These two second layer wirings MW extend in the Y direction in the memory cell region. Furthermore, third plugs P are disposed over the two second layer wirings MW and a third layer wiring M (WLA) extends in the X direction so as to couple the two third plugs P. This third layer wiring M (WLA) is a word line.
1
1
2
1
1
2
2
1
1
4
1
3
2
2
j
i
m
k
The first layer wiring MS coupled to the other source/drain region (P) of TND and the other source/drain region (P) of TND is coupled to a second layer wiring M (LVSS) through a second plug P. This second layer wiring (LVSS) is a grounding voltage line. The first layer wiring MS coupled to the other source/drain region (p) of TND and the other source/drain region (P) of TND is coupled to a second layer wiring M (LVSS) through a second plug P. This second layer wiring (LVSS) is a grounding voltage line.
1
1
2
2
2
1
1
4
2
2
2
t
p
The first layer wiring MBL coupled to the other source/drain region (P) of TNA is coupled to a second layer wiring M (BLB) through a second plug P. The first layer wiring MBL coupled to the other source/drain region (P) of TNA is coupled to a second layer wiring M (/BLB) through a second plug P. These two second layer wirings M (bit lines BLB and /BLB) make up a bit line pair and extend in the Y direction.
1
1
1
2
2
1
1
3
2
2
2
n
u
The first layer wiring MBL coupled to the other source/drain region (P) of TNA is coupled to a second layer wiring M (BLA) through a second plug P. The first layer wiring MBL coupled to the other source/drain region (p) of TNA is coupled to a second layer wiring M (/BLA) through a second plug P. These two second layer wirings M (bit lines BLA and /BLA) make up a bit line pair and extend in the Y direction.
2
2
1
1
1
2
1
1
2
2
2
o
q
A second layer wiring M (LVDD) is disposed so as to couple the second plug P over the first layer wiring MD coupled to the other source/drain region (P) of TP and the second plug P over the first layer wiring MD coupled to the other source/drain region (P) of TP. This second layer wiring M (LVDD) is a supply voltage line. This supply voltage line generally extends in the Y direction and includes a linear portion extending in the Y direction and portions which protrude from this linear portion and cover the second plugs P.
2
2
3
3
2
3
FIG. 48
FIGS. 49 to 51
The couplings of the second plugs P, second layer wirings M, third plugs P, and third layer wiring M may be modified in various ways as far as the interconnection structure shown in the circuit diagram of is satisfied. However, it should be noted that the layout can be simplified when the second layer wirings M generally extend in the Y direction and the third layer wirings M generally extend in the X direction as mentioned above. Although only one memory cell region (1 bit) is shown in for illustration convenience, memory cells are repeatedly disposed in the X direction and Y direction, so in the memory cell array, the grounding voltage lines (LVSS), bit lines (BLA, /BLA, BLB, /BLB) and supply voltage lines (LVDD) extend in the Y direction and the word lines (WLA, WLB) extend in the X direction.
2
1
4
3
1
2
3
4
2
2
In this embodiment, active regions are separated from each other (AcP and AcP or AcP and AcP), so the area for the formation of the driver transistors (TND and TND or TND and TND) is increased because of the existence of the element isolation region (STI) between the active regions. Using this area, the bit lines and grounding voltage lines (LVSS) can be disposed between the second layer wirings M (second layer wirings MW coupled to the word lines) as mentioned above. Also, since each grounding voltage line LVSS is disposed between bit lines, interaction between bit lines (crosstalk noise) is reduced due to the shielding effect of the grounding voltage line (LVSS).
FIGS. 49 to 51
The patterns described above referring to are symmetrical with respect to the center point of the memory cell region.
FIG. 52
2
2
1
1
1
2
4
4
3
3
For reference, is a circuit diagram showing how the ten transistors (TND, TNA, TNA, TND, TP, TP, TND, TNA, TND, and TNA) are arranged and interconnected in accordance with the above “Memory Cell Pattern Layout.”
FIG. 48
FIG. 53
Although the ninth embodiment concerns a dual-port SRAM () in which the length of the virtually rectangular memory cell region's side extending in the Y direction is equivalent to the sum of lengths of two transistors, it is also possible that the length of the virtually rectangular memory cell region's side extending in the Y direction is equivalent to the sum of lengths of four transistors. A tenth embodiment concerns a dual-port SRAM () in which the length of the virtually rectangular memory cell region's side extending in the Y direction is equivalent to the sum of lengths of four transistors, as explained below.
FIG. 48
The SRAM memory cell circuit configuration in this embodiment is the same as that in the ninth embodiment which has been described referring to .
FIGS. 53 to 55
FIG. 53
FIG. 54
FIG. 55
FIGS. 53 and 54
FIGS. 53 and 54
FIGS. 54 and 55
FIGS. 54 and 55
1
1
1
2
2
2
3
3
1
2
are plan views showing the SRAM memory cell structure according to the tenth embodiment. shows the arrangement of active regions A, gate electrodes G, and first plugs P. shows the arrangement of the first plugs P, first layer wirings M, and second plugs P. shows the arrangement of the second plugs P, second layer wirings M, third plugs P, and third layer wiring M. When the plan views of are placed one upon the other with reference to the first plugs P, the positional relation between the patterns shown in becomes clear. When the plan views of are placed one upon the other with reference to the second plugs P, the positional relation between the patterns shown in becomes clear. The rectangular area surrounded by the chain line in the figures denotes one memory cell region (for 1 bit).
FIG. 53
FIG. 53
FIG. 12
As shown in , a p-type well (P-well), an n-type well (N-well) and a p-type well (P-well) are arranged side by side in the X direction over the semiconductor substrate. Although only one memory cell region (1 bit) is shown in , memory cells are repeatedly disposed in the X direction and Y direction (), so these wells (P-well, N-well and P-well) are considered to continuously extend in the Y direction. The exposed regions of these wells are active regions (A).
1
2
Over the semiconductor substrate, three active regions (AP, AN, AP) are arranged side by side in the X direction. An element isolation region (STI) lies between active regions (A). In other words, the active regions (A) are marked out by the element isolation regions (STI). The wells (P-well, N-well, and P-well) are continuous with each other under the element isolation regions STI.
1
1
FIG. 53
FIG. 12
Specifically, the active region AP is an exposed region of the p-type well (P-well) which is virtually rectangular with its long side in the Y direction in the memory cell region. Although only one memory cell region (1 bit) is shown in for illustration convenience, memory cells are repeatedly disposed in the X direction and Y direction (), so in the memory cell array, the active region AP is considered to continuously extend in the Y direction in a linear form.
The active region AN is an exposed region of the n-type well (N-well) which is virtually rectangular with its long side in the Y direction.
2
2
FIG. 53
FIG. 12
The active region AP is an exposed region of the p-type well (P-well) which is located on the right of the n-type well as seen in and virtually rectangular with its long side in the Y direction in the memory cell region. Memory cells are repeatedly disposed in the X direction and Y direction (), so in the memory cell array, the active region AP is considered to continuously extend in the Y direction in a linear form.
1
2
Gate electrodes G extend over the three active regions (AP, AN, and AP) through a gate insulating film (GO) in a way to cross the active regions in the X direction, as components of the ten transistors as described above in the “Circuit Configuration” section in the description of the ninth embodiment.
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1
1
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3
Specifically, two common gate electrodes (G and G) are disposed over the active regions AP, AN, and AP in a way to cross the active regions. Consequently TND (and TND are disposed in series over the active region AP, sharing a source/drain region and TND and TND are disposed in series over the active region AP, sharing a source/drain region, and TP and TP are disposed in series over the active region AN, sharing a source/drain region. The gate electrodes (G) of TND, TP, and TND are joined into the common gate electrode G and the gate electrodes (G) of TND, TP, and TND are joined into the common gate electrode G. These two common gate electrodes (G and G) extend in parallel with each other in the X direction.
4
1
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1
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2
1
1
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1
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b
a
A gate electrode Gis disposed over the active region AP in parallel with the two common gate electrodes (G and G). Consequently, TNA is disposed over the active region AP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region). Also, another gate electrode Gis disposed over the active region AP in parallel with the two common gate electrodes (G and G). Consequently, TNA is disposed over the active region AP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region).
4
2
1
3
2
2
2
2
2
2
1
3
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2
4
4
a
b
A gate electrode Gis disposed over the active region AP in parallel with the two common gate electrodes (G and G). Consequently, TNA is disposed over the active region AP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region). Also, another gate electrode Gis disposed over the active region AP in parallel with the two common gate electrodes (G and G). Consequently, TNA is disposed over the active region AP and a source/drain region of TNA and a source/drain region of TND are joined (into a common source/drain region).
1
2
3
4
1
2
1
2
As mentioned above, in this embodiment, each driver transistor is divided into two transistors (TND and TND, or TND and TND) and these transistors are located over different active regions (AP and AP). In addition, since these active regions (AP and AP) extend in the Y direction, the layout can be simplified and higher patterning accuracy can be achieved.
Therefore, as in the first embodiment, each active region (A) is not supposed to have a bent portion (stepped portion) and it is easy to make the gate width ratio between the access transistor and driver transistor 1:2.
1
2
3
4
1
2
Furthermore, since access transistors (TNA, TNA, TNA, and TNA) are also disposed over the active regions (AP and AP), the number of active regions is decreased. This permits simpler layout and contributes to reduction in memory cell region size.
Furthermore, since the active regions (A) extend in the Y direction, the gate electrodes (G) can extend in the X direction so not only the patterning accuracy of the active regions (A) but also that of the gate electrodes (G) can be improved. Particularly, as detailed in connection with the first embodiment, it is easy to adopt the multiple exposure technique in order to enhance the patterning accuracy. In addition, it is easy to create a simulation model, thereby contributing to improvement in inspection accuracy.
FIG. 54
FIG. 53
FIG. 53
1
2
2
1
1
1
2
4
4
3
3
1
As shown in , first plugs P are disposed over the source/drain regions of the ten transistors (TND, TNA, TNA, TND, TP, TP, TND, TNA, TND, and TNA) described above referring to . Also, first plugs P are disposed over the six gate electrodes described referring to .
1
1
1
First layer wirings M are disposed over the first plugs P for electrical couplings between first plugs P.
1
2
2
1
1
1
1
1
1
2
3
4
1
1
1
FIG. 48
FIG. 53
Specifically, a first plug PF over the common source/drain region of TNA and TND, a first plug PIE over the common source/drain region of TND and TNA, a first plug PG over one source/drain region of TP, and a first plug PH over the common gate electrode (G) of TP, TND, and TND are coupled by a first layer wiring (first node wiring) MA. This first layer wiring MA corresponds to the storage node A shown in . In the above explanation, “one” means the upper source/drain region of the relevant transistor (TP) as seen in .
1
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3
1
4
4
1
2
1
3
1
1
2
1
1
2
FIG. 48
FIG. 53
A first plug PB over the common source/drain region of TNA and TND, a first plug PA over the common source/drain region of TND and TNA, a first plug PC over one source/drain region of TP, and a first plug PD over the common gate electrode (G) of TP, TND, and TND are coupled by a first layer wiring (second node wiring) MB. This first layer wiring MB corresponds to the storage node B shown in . In the above explanation, “one” means the lower source/drain region of the relevant transistor (TP) as seen in .
1
1
2
4
1
1
1
3
1
FIG. 48
A first layer wiring MS is disposed over a first plug PI over the common source/drain region of TND and TND. A first layer wiring MS is disposed over a first plug PJ over the common source/drain region of TND and TND. These first layer wirings MS correspond to the grounding voltage (VSS) in and are coupled to grounding voltage lines (LVSS) as described later.
1
1
1
2
1
FIG. 48
Also a first layer wiring (pad region) MD is disposed over a first plug PK over the common source/drain region of TP and TP. This first layer wiring MD corresponds to the supply voltage (VDD) in and is coupled to a supply voltage line (LVDD) as described later.
1
1
1
1
2
First layer wirings MBL are disposed over a first plug PW over the other source/drain region of TNA, and a first plug PM over the other source/drain region of TNA respectively.
1
1
3
1
4
First layer wirings MBL are disposed over a first plug PL over the other source/drain region of TNA, and a first plug PX over the other source/drain region of TNA respectively.
1
1
4
1
2
3
1
1
4
2
1
2
4
b
a
a
b
Also, a first layer wiring MW is disposed to couple a first plug PY over the gate electrode (G) of TNA and a first plug PIN over the gate electrode (G) of TNA. A first layer wiring MW is disposed to couple a first plug PO over the gate electrode (G) of TNA and a first plug PZ over the gate electrode (G) of TNA.
1
1
FIG. 48
The couplings between first plugs P by the first layer wirings M may be modified in various ways as far as the interconnection structure shown in the circuit diagram of is satisfied.
FIG. 55
FIG. 54
2
1
1
1
1
1
1
1
1
1
2
As shown in , second plugs P are disposed over the first layer wirings M (MS, MD, MW, MBL), among the first layer wirings M described above referring to , other than the first layer wirings M (MA and MB) corresponding to the storage nodes (A and B), and second layer wirings M are disposed over them.
1
4
2
1
3
2
2
3
2
3
3
1
4
2
2
4
2
2
3
2
3
3
b
a
a
b
Specifically, the first layer wiring MW coupled to the gate electrodes (G, G) of TNA and TNA is coupled to a second layer wiring MW through a second plug P. A third layer wiring M (WLA) is disposed over the second layer wiring MW through a third plug P. This third layer wiring M (WLA) is a word line extending in the X direction. The first layer wiring MW coupled to the gate electrodes (G, G) of TNA and TNA is coupled to a second layer wiring MW through second plug P. A third layer wiring M (WLB) is disposed over the second layer wiring MW through a third plug P. This third layer wiring M (WLB) is a word line extending in the X direction.
1
1
2
4
2
22
2
1
1
3
1
2
2
2
The first layer wiring MS coupled to the common source/drain region (PI) of TND and TND is coupled to a second layer wiring M (LVSS) through a second plug . This second layer wiring M (LVSS) is a grounding voltage line. The first layer wiring MS coupled to the common source/drain region (PJ) of TND and TND is coupled to a second layer wiring M (LVSS) through a second plug P. This second layer wiring M (LVSS) is a grounding voltage line. These two grounding voltage lines extend in the Y direction.
1
1
2
2
2
1
1
4
2
2
2
The first layer wiring MBL coupled to the other source/drain region (PM) of TNA is coupled to a second layer wiring M (BLB) through a second plug P. The first layer wiring MBL coupled to the other source/drain region (PX) of TNA is coupled to a second layer wiring M (/BLB) through a second plug P. These two second layer wirings M (bit lines BLB and /BLB) make up a bit line pair and extend in the Y direction.
1
1
1
2
2
1
1
3
2
2
2
The first layer wiring MBL coupled to the other source/drain region (PW) of TNA is coupled to a second layer wiring M (BLA) through a second plug P. The first layer wiring MBL coupled to the other source/drain region (PL) of TNA is coupled to a second layer wiring M (/BLA) through a second plug P. These two second layer wirings M (bit lines BLA and /BLA) make up a bit line pair and extend in the Y direction.
2
1
1
1
2
2
2
A second layer wiring M (LVDD) is disposed over the first layer wiring MD coupled to the common source/drain region (PK) of TP and TP through a second plug P. This second layer wiring M (LVDD) is a supply voltage line extending in the Y direction.
2
2
3
3
2
3
FIG. 48
FIGS. 53 to 55
The couplings of the second plugs P, second layer wirings M, third plugs P, and third layer wiring M may be modified in various ways as far as the interconnection structure shown in the circuit diagram of is satisfied. However, it should be noted that the layout can be simplified when the second layer wirings M generally extend in the Y direction and the third layer wirings M generally extend in the X direction as mentioned above. Although only one memory cell region (1 bit) is shown in for illustration convenience, memory cells are repeatedly disposed in the X direction and Y direction, so in the memory cell array, the grounding voltage lines (LVSS), bit lines (BLA, /BLA, BLB, /BLB) and supply voltage lines (LVDD) extend in the Y direction and the word lines (WLA, WLB) extend in the X direction.
2
In this embodiment, since each grounding voltage line (LVSS) lies between a second layer wiring MW and a bit line, interaction between wirings (crosstalk noise) is reduced due to the shielding effect of the grounding voltage line.
FIGS. 53 to 55
The patterns described above referring to are symmetrical with respect to the center point of the memory cell region.
FIG. 56
2
2
1
1
1
2
4
4
3
3
For reference, is a circuit diagram showing how the ten transistors (TND, TNA, TNA, TND, TP, TP, TND, TNA, TND, and TNA) are arranged and interconnected in accordance with the above “Memory Cell Pattern Layout.”
FIG. 1
As for the SRAM structure, the conductivity type of each transistor in the circuit according to the first embodiment () may be reversed. In the SRAM memory cell circuit configuration in an eleventh embodiment, the conductivity types of the transistors are opposite to those in the first embodiment.
FIG. 57
FIG. 57
FIG. 1
FIG. 1
1
2
1
2
3
4
1
2
1
2
3
4
1
2
1
2
is an equivalent circuit diagram showing the SRAM memory cell according to the eleventh embodiment. As shown in , the memory cell includes eight transistors as in the first embodiment but it is different from the first embodiment in that p-type transistors (TPA, TPA, TPD, TPD, TPD, TPD) are employed in place of the n-type transistors (TNA, TNA, TND, TND, TND, TND) shown in . Also, n-type transistors (TN, TN) are employed in place of the p-type transistors (TP, TP) shown in .
In other words, the conductivity type of each transistor in this embodiment is opposite to that in the first embodiment.
1
2
1
2
3
4
The p-type (second conductivity type in this embodiment) transistors (TPA, TPA, TPD, TPD, TPD, TPD) are coupled to the supply voltage (VDD, secondary supply voltage, voltage different from the secondary supply voltage, or higher voltage than the secondary supply voltage in this embodiment).
1
2
The n-type (first conductivity type in this embodiment) transistors (TN, TN) are coupled to the grounding voltage (VSS, primary supply voltage in this embodiment).
FIG. 1
The rest of the circuit is the same as in the circuit configuration shown in , so detailed description of the coupling arrangement of the transistors is omitted here.
1
2
3
4
As mentioned above, in the SRAM memory cell according to the eleventh embodiment as well, each driver transistor is divided into two transistors (TPD and TPD, TPD and TPD).
FIGS. 58 to 60
FIG. 58
FIG. 59
FIG. 60
FIGS. 58 and 59
FIGS. 58 and 59
FIGS. 59 and 60
FIGS. 59 and 60
1
1
1
2
2
2
3
3
1
2
are plan views showing the SRAM memory cell structure according to the eleventh embodiment. shows the arrangement of active regions Ac, gate electrodes G, and first plugs P. shows the arrangement of the first plugs P, first layer wirings M, and second plugs P. shows the arrangement of the second plugs P, second layer wirings M, third plugs P, and third layer wiring M. When the plan views of are placed one upon the other with reference to the first plugs P, the positional relation between the patterns shown in becomes clear. When the plan views of are placed one upon the other with reference to the second plugs P, the positional relation between the patterns shown in becomes clear. The rectangular area surrounded by the chain line in the figures denotes one memory cell region (for 1 bit).
FIG. 1
FIG. 58
FIG. 2
2
1
1
2
3
4
As mentioned above, the SRAM memory cell according to this embodiment includes transistors which are opposite to the transistors in the first embodiment () in terms of conductivity type. Therefore, as shown in , the conductivity types of the wells are opposite to those of the wells in the first embodiment (). Six active regions (AcN, AcN, AcP, AcP, AcN, and AcN) are arranged side by side in the X direction. An element isolation region (STI) lies between active regions (Ac). In other words, the active regions (Ac) are marked out by the element isolation regions (STI).
FIG. 2
2
1
1
2
3
4
2
1
3
4
1
2
The patterns in the eleventh embodiment are the same as in the first embodiment () except that among the six active regions (AcN, AcN, AcP, AcP, AcN, and AcN), AcN, AcN, AcN, and AcN are exposed regions of the n-type wells (N-well) and AcP and AcP are exposed regions of the p-type well (P-well). Inevitably, the conductivity types of impurities implanted into the source/drain regions of the transistors are reversed. Specifically, the source/drain regions of the active regions as the exposed regions of the n-type wells (N-well) have p-type conductivity while the source/drain regions of the active regions as the exposed regions of the p-type well (P-well) have n-type conductivity.
1
1
1
2
2
2
3
3
2
2
2
FIG. 2
FIG. 59
FIG. 3
FIG. 60
FIG. 4
FIG. 4
The arrangement of the gate electrodes G and first plugs P is the same as in the first embodiment (), so description thereof is omitted. Also, the arrangement of the first plugs P, first layer wirings M, and second plugs P as shown in is the same as in the first embodiment (). Also, the arrangement of the second plugs P, second layer wirings M, third plugs P, and third layer wirings M as shown in is the same as in the first embodiment () except that second layer wirings M (LVDD) are disposed in pace of the grounding voltage lines (LVSS) in the first embodiment () and a second layer wiring M (LVSS) is disposed in place of the second layer wiring M (LVDD), so description thereof is omitted.
1
2
3
4
2
1
4
3
2
1
4
3
1
2
As in the first embodiment, in this embodiment, each driver transistor is divided into two transistors (TPD and TPD or TPD and TPD) and these transistors are disposed over different active regions (AcN and AcN or AcN and AcN). In addition, since these active regions (AcN and AcN, AcN, and AcN) extend in the Y direction, the layout can be simplified and higher patterning accuracy can be achieved. Furthermore, since the access transistors (TPA and TPA) are disposed over the active regions, the number of active regions is decreased.
1
3
1
2
2
1
4
3
1
1
In addition, it is possible to make the driving performance of the driver transistor (TPD, TPD) larger than that of the access transistor (TPA, TPA). For example, by making the ratio in width (length in the X direction) between the active regions (AcN and ACN or AcN and AcN) :, the gate width ratio between the access transistor and driver transistor can be made 1:2.
1
2
3
4
Since active regions are separated from each other (TPD and TPD or TPD and TPD), each active region can be virtually rectangular, namely it is not supposed to have a bent portion (stepped portion) as mentioned above. Consequently, patterning accuracy is improved and the characteristics of the transistors formed over the active regions (Ac) are improved. Furthermore, product quality instability is reduced and the performance characteristics of the SRAM memory cell array are improved. Also, production yield is increased.
1
3
1
2
1
2
3
4
Also, since not only a driver transistor (TPD or TPD) but also an access transistor (TPA or TPA) are disposed in one of the active regions (for TPD and TPD or TPD and TPD), the number of active regions is decreased. This permits simpler layout and contributes to reduction in memory cell region size.
Furthermore, since the active regions (Ac) extend in the Y direction, the gate electrodes (G) can extend in the X direction so not only the patterning accuracy of the active regions (Ac) but also that of the gate electrodes (G) can be improved. Particularly, as detailed above in connection with the first embodiment, it is possible to adopt the multiple exposure technique in order to enhance the patterning accuracy. In addition, it is easy to create a simulation model, thereby contributing to improvement in inspection accuracy.
2
3
FIG. 60
As in the first embodiment, the second layer wirings M generally extend in the Y direction and the third layer wiring M generally extends in the X direction (), so the layout can be simplified.
2
1
4
3
1
2
3
4
In this embodiment, active regions are separated from each other (AcN and AcN or AcN and AcN), so the area for the formation of the driver transistors (TPD and TPD or TPD and TPD) is increased because of the existence of the element isolation region (STI) between the active regions. This area can be used for the supply voltage lines (LVDD).
FIGS. 58 to 60
The patterns described above referring to are symmetrical with respect to the center point of the memory cell region.
FIG. 61
2
1
1
1
2
3
2
4
For reference, is a circuit diagram showing how the eight transistors (TPD, TPA, TPD, TN, TN, TPD, TPA, and TPD) are arranged and interconnected in accordance with the above “Memory Cell Pattern Layout.”
FIG. 62
FIG. 62
The SRAM which has been shown above by the detailed description of the preferred embodiments may be applied to any type of semiconductor device (including a semiconductor component and electronic equipment). For example, the SRAM can be incorporated in a semiconductor chip which has a system including an SoC (System-on-a-chip) or a microcomputer. shows the layout of a semiconductor chip according to the twelfth embodiment. As shown in , the semiconductor chip includes a CPU (Central Processing Unit), SRAMs, and a logic circuit (LOGIC). In the chip, single-port SRAMs (SP-SRAM) and dual-port SRAMs (DP-SRAM) as mentioned above are used. In addition to the SRAMs, the chip may include another type of memory such as an EEPROM (Electrically Erasable Programmable Read Only Memory) or may incorporate an analog circuit.
A CPU, or central processing unit, is the heart of a computer. The CPU reads a command from a storage unit and interprets it and performs a variety of calculations and control functions in accordance with the command. The CPU incorporates a CPU core in which SRAMs are mounted. High-performance SRAMs are used as the SRAMs in the CPU core. The SRAMs according to the first to eleventh embodiments detailed above are suitable as such SRAMs. It is needless to say that the SRAMs according to the first to eleventh embodiments may be used for the single-port SRAMs (SP-RAM) and dual-port SRAMs (DP-SRAM) in the chip.
The characteristics of a microcomputer can be improved by mounting the SRAMs according to the first to eleventh embodiments in the microcomputer.
The invention made by the present inventors has been so far explained concretely in reference to the first to eleventh embodiments thereof. However, the invention is not limited thereto and it is obvious that these details may be modified in various ways without departing from the spirit and scope thereof.
1
2
FIG. 63
FIG. 63
For example, in the first embodiment and so on, the active regions (ActP, AcP, and so on) are defined as virtually rectangular; however, even though the shape of an active region on the reticle (exposure mask) is rectangular, the actual shape of the finished active region after exposure and etching is not limited to a rectangle. For example, the active region may have round corners as shown in . Also, the width of one portion of an active region may be different from the width of another portion thereof. Even if that is the case, the same advantageous effects as mentioned above are achieved, so the present invention does not exclude such active region shapes as shown in .
FIG. 2
Furthermore, although the gate electrodes (G) shown in many figures ( and so on) are rectangular, their corners may be round in the finished form. The present invention does not exclude such corner-rounded gate electrodes.
1
1
2
1
FIG. 30
FIG. 2
FIG. 34
FIG. 2
FIG. 38
Some of the above preferred embodiments may be combined. For example, the shared first plugs SP in the fifth embodiment () may be applied to the pattern layout in the first embodiment (). Also, the n-type well (N-well) pattern in the sixth embodiment () may be applied to TP and TP in the first embodiment (). The shared first plugs SP may be applied there. Also, a layout in which p-type wells (P-well) are both located on one side like the seventh embodiment () may be applied to the pattern layout in the first embodiment. Also the SRAM according to the eleventh embodiment in which the conductivity types of transistors are reversed may be applied to the pattern layouts in the other embodiments. Thus, various changes may be made without departing from the spirit and scope of the present invention.
The present invention may be applied to semiconductor devices and particularly to a semiconductor device having an SRAM.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1
is an equivalent circuit diagram showing an SRAM memory cell according to a first embodiment of the invention;
FIG. 2
is a plan view showing the SRAM memory cell structure according to the first embodiment;
FIG. 3
is a plan view showing the SRAM memory cell structure according to the first embodiment;
FIG. 4
is a plan view showing the SRAM memory cell structure according to the first embodiment;
FIG. 5
is a circuit diagram showing that transistors are arranged in line with an SRAM memory cell layout according to the first embodiment;
FIG. 6
is a sectional view of the SRAM memory cell structure according to the first embodiment;
FIG. 7
is a sectional view of the SRAM memory cell structure according to the first embodiment;
FIG. 8
is a sectional view of the SRAM memory cell structure according to the first embodiment;
FIG. 9
is a sectional view of the SRAM memory cell structure according to the first embodiment;
FIG. 10
is a sectional view of the SRAM memory cell structure according to the first embodiment;
FIG. 11
is a sectional view of the SRAM memory cell structure according to the first embodiment;
FIG. 12
is a plan view schematically showing the SRAM memory cell array according to the first embodiment;
FIG. 13
is a plan view of the SRAM memory cell array structure according to the first embodiment;
FIG. 14
is a plan view of the SRAM memory cell array structure according to the first embodiment;
FIG. 15
is a plan view schematically showing the positions of tap cell regions in the SRAM memory cell array according to the first embodiment;
FIG. 16
is a plan view of the tap cell (F′) structure of the SRAM according to the first embodiment;
FIG. 17
is a plan view of the tap cell (F′) structure of the SRAM according to the first embodiment;
FIG. 18
is a plan view schematically showing SRAM memory cells and tap cell regions according to the first embodiment;
FIG. 19
is a plan view showing how SRAM memory cells and tap cell regions are arranged according to the first embodiment;
FIG. 20
is a plan view showing how SRAM memory cells and tap cell regions are arranged according to the first embodiment;
FIG. 21
is a plan view of the SRAM memory cell structure according to a second embodiment of the invention;
FIG. 22
is a plan view of the SRAM memory cell structure according to the second embodiment;
FIG. 23
is a plan view of the SRAM memory tap cell structure according to a third embodiment of the invention;
FIG. 24
is a plan view of the SRAM memory tap cell structure according to the third embodiment;
FIG. 25
is a circuit diagram of the SRAM memory cell according to the third embodiment;
FIG. 26
is a plan view of the SRAM memory cell structure according to a fourth embodiment of the invention;
FIG. 27
is a plan view of the SRAM memory cell structure according to the fourth embodiment;
FIG. 28
is a plan view of the SRAM memory cell structure according to the fourth embodiment;
FIG. 29
is a circuit diagram showing that transistors are arranged in line with an SRAM memory cell layout according to the fourth embodiment;
FIG. 30
is a plan view of the SRAM memory cell structure according to a fifth embodiment of the invention;
FIG. 31
is a plan view of the SRAM memory cell structure according to the fifth embodiment;
FIG. 32
is a plan view of the SRAM memory cell structure according to the fifth embodiment;
FIG. 33
is a circuit diagram showing that transistors are arranged in line with an SRAM memory cell layout according to the fifth embodiment;
FIG. 34
is a plan view of the SRAM memory cell structure according to a sixth embodiment of the invention;
FIG. 35
is a plan view of the SRAM memory cell structure according to the sixth embodiment;
FIG. 36
is a plan view of the SRAM memory cell structure according to the sixth embodiment;
FIG. 37
is a circuit diagram showing that transistors are arranged in line with an SRAM memory cell layout according to the sixth embodiment;
FIG. 38
is a plan view of the SRAM memory cell structure according to a seventh embodiment of the invention;
FIG. 39
is a plan view of the SRAM memory cell structure according to the seventh embodiment;
FIG. 40
is a plan view of the SRAM memory cell structure according to the seventh embodiment;
FIG. 41
is a circuit diagram showing that transistors are arranged in line with an SRAM memory cell layout according to the seventh embodiment;
FIG. 42
is a plan view of the tap cell (F′) structure of the SRAM according to the seventh embodiment;
FIG. 43
is a plan view of the tap cell (F′) structure of the SRAM according to the seventh embodiment;
FIG. 44
is a plan view of the SRAM memory cell structure according to an eighth embodiment of the invention;
FIG. 45
is a plan view of the SRAM memory cell structure according to the eighth embodiment;
FIG. 46
is a plan view of the SRAM memory cell structure according to the eighth embodiment;
FIG. 47
is a circuit diagram showing that transistors are arranged in line with an SRAM memory cell layout according to the eighth embodiment;
FIG. 48
is an equivalent circuit diagram showing an SRAM memory cell according to a ninth embodiment of the invention;
FIG. 49
is a plan view of the SRAM memory cell structure according to the ninth embodiment;
FIG. 50
is a plan view of the SRAM memory cell structure according to the ninth embodiment;
FIG. 51
is a plan view of the SRAM memory cell structure according to the ninth embodiment;
FIG. 52
is a circuit diagram showing that transistors are arranged in line with an SRAM memory cell layout according to the ninth embodiment;
FIG. 53
is a plan view of the SRAM memory cell structure according to a tenth embodiment of the invention;
FIG. 54
is a plan view showing the SRAM memory cell structure according to the tenth embodiment;
FIG. 55
is a plan view of the SRAM memory cell structure according to the tenth embodiment;
FIG. 56
is a circuit diagram showing that transistors are arranged in line with an SRAM memory cell layout according to the tenth embodiment;
FIG. 57
is an equivalent circuit diagram showing an SRAM memory cell according to an eleventh embodiment of the invention;
FIG. 58
is a plan view of the SRAM memory cell structure according to the eleventh embodiment;
FIG. 59
is a plan view of the SRAM memory cell structure according to the eleventh embodiment;
FIG. 60
is a plan view of the SRAM memory cell structure according to the eleventh embodiment;
FIG. 61
is a circuit diagram showing that transistors are arranged in line with an SRAM memory cell layout according to the eleventh embodiment;
FIG. 62
shows the layout of a semiconductor chip according to a twelfth embodiment of the invention;
FIG. 63
is a plan view showing a structure example of one part of the SRAM memory cell according to the first embodiment;
FIG. 64
is a plan view showing an SRAM memory cell as a comparative example; and
FIG. 65
is a plan view showing a portion of an SRAM memory cell as a comparative example. | |
A magnetic stir bar (stir bar) is the magnetic bar placed within the liquid which provides the stirring action. The stir bar's motion is driven by another rotating magnet or assembly of electromagnets in the stirrer device, beneath the vessel containing the liquid. Magnetic stir bars are typically coated in PTFE (Teflon), the coatings are intended to be chemically inert, not contaminating or reacting with the reaction mixture they are in.
They are bar shaped and often octagonal in cross-section (sometimes circular), although a variety of special shapes exist for more efficient stirring. Most stir bars have a pivot ring around the center on which they rotate. The smallest are only a few millimeters long and the largest a few centimeters. A magnetic stir bar retriever is a separate magnet on the end of a long stick (usually coated with PTFE) which can be used to remove stir bars from a vessel.
|Diameter x Total length (mm)|
|A 3 x 6||A 12 x 25|
|A 4 x 8||A 12 x 35|
|A 5 x 10||A 15 x 35|
|A 6 x 8||A 15 x 40|
|A 6 x 10.5||A 16 x 48|
|A 7 x 15||A 17 x 50|
|A 7 x 18||A 18 x 70|
|A 8 x 20||A 20 x 40|
|A 9 x 20||A 20 x 45|
|A 9 x 25||A 20 x 50|
|A 10 x 25||A 20 x 63|
|A 10 x 28||A 25 x 70|
|A 10 x 30||A 25 x 100|
For further details about laboratory plastic wares, please contact us [email protected]
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Packaging Details: Export Cartons
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Albert Einstein’s E = mc^2 is probably the most famous equation of physics that the German physicist gave in 1905. It’s a mathematical relationship between mass and energy. We have seen how matter can be converted into energy. But the question is that is the reverse also possible? Have we seen energy being converted into mass? We surely don’t see that happening in day-to-day life but this process has been confirmed in a recent experiment at the Brookhaven National Laboratory.
Oct 25, 2021
A Quantum Collision Just Created Matter From Light
1 comment:
- Olexander said...
-
I once asked myself, "Can the streams of photons and neutrinos that fall into intergalactic voids begin to form material particles, which will then form clouds of some matter." Reflecting on the probability of dust formation from photons, I then came to the conclusion that it is quite probable. The probability of the collision of photons and neutrinos in intergalactic cavities can increase significantly if, under the action of large galaxy masses, the coefficient of dimensionality of space in cavities begins to decrease. It's like on the surface of a big black hole, space loses its dimensionality, becoming first two-dimensional and then even one-dimensional, and in the almost "linear dimensionality of a black hole the properties of everything change. I think intergalactic voids can have the same properties the same can change the dimensionality of space, which will lead to the combination of photons with neutrinos and other "smallest particles". | https://www.sci-nature.vip/2021/10/a-quantum-collision-just-created-matter.html |
Usually, they go to the trash can, but you can also save lives with them: we are talking about bottle caps. Since 2014, the non-profit association Deckel drauf, founded by German Rotary members, has been collecting those caps, selling them to a recycling company, and using the proceeds to support the End Polio Now initiative.
The goal of “End Polio Now” is to eradicate polio worldwide. For every 500 caps collected, one child in Afghanistan, Pakistan, or Nigeria receives a Polio vaccination. Only in these three countries is the disease still present.
On the initiative of MBS Professor Dr. Arnd Albrecht (left on the picture above), MBS faculty and staff members collected thousands of bottle caps during the last semester alone, and handed them over to the Wörthsee Rotary Club. As can be seen in the picture above, club president Rainer Wertenauer (r.) took the delivery of the caps with pleasure.
Many thanks to Prof. Dr. Albrecht and to all caps collectors! | https://www.munich-business-school.de/insights/en/2019/mbs-supports-rotary-project-end-polio-now/ |
by Menton .
Written in English
Edition Notes
|Statement||by R. Warner.|
|ID Numbers|
|Open Library||OL19573597M|
"Admirably fulfills its aim of explaining the development of Greek thought and Greek ways of thinking to the reader or student, who, while lacking knowledge of Greek, yet wants to learn something about the philosophers whose ideas have coloured and influenced European culture."-- "The Times (London) Literary Supplement""Cited by: Books shelved as greek-philosophy: The Republic by Plato, The Nicomachean Ethics by Aristotle, The Symposium by Plato, Apology by Plato, and Politics by. Books shelved as ancient-greek-philosophy: The Republic by Plato, The Nicomachean Ethics by Aristotle, Phaedo by Plato, Apology by Plato, and The Symposi. Explore our list of Ancient Greek Philosophy Books at Barnes & Noble®. Receive FREE shipping with your Barnes & Noble Membership. B&N Outlet Membership Educators Gift Cards Stores & Events Help Auto Suggestions are available once you type at least 3 letters. Publish your book with B&N. Learn More. The B&N Mastercard®.
This list of ancient Greek philosophers contains philosophers who studied in ancient Greece or spoke Greek. Ancient Greek philosophy began in Miletus with the pre-Socratic philosopher Thales and lasted through Late eduevazquez.com of the most famous and influential Greek philosophers of all time were from the ancient Greek world, including Socrates, Plato and Aristotle. Jan 02, · This page contains a list of the best books on Ancient Greek philosophy. Just to be clear, there is no single best book on Ancient Greek philosophy. The best book for you will depend on your preferred learning style and the amount of time that you want to spend reading about Ancient Greek philosophy. An page scholarly overview is unlikely to be best for someone looking for a short . The Greek Philosophers was published in , two years before its author, W. K. C. Guthrie, was elected the third Laurence Professor of Ancient Philosophy in the University of Cambridge. It predates his monumental (and sadly unfinished) six-volume A History of Greek Philosophy by more. History >> Ancient Greece. Greek philosophers were "seekers and lovers of wisdom". They studied and analyzed the world around them using logic and reason. Although we often think of philosophy as religion or "the meaning of life", the Greek philosophers were also scientists.
Greek Philosophers shared a post. June 18 · The post is about a book in English, thankfully, regarding one of the medieval Greeks (11th cent.) - west bibliography calls them Byzantines- and his heritage to global history and philosophy. Mar 30, · Buy The Greek Philosophers: From Thales to Aristotle (Up) 1 by W.K.C. Guthrie (ISBN: ) from Amazon's Book Store. Everyday low prices and free delivery on eligible orders/5(8). Find out more about Ancient Greek Philosophers by Editors of Canterbury Classics, Kenneth C. Mondschein at Simon & Schuster. Read book reviews & excerpts, watch author videos & eduevazquez.comed on: October 02, - First of the great Greek philosophers - A philosopher who believed in an absolute right or wrong; asked students pointed questions to make them use their reason, later became Socratic method. Plato - A student of Socrates, recorded his teacher's dialogues and found a school of philosophy called Academy. | https://cibudatoli.eduevazquez.com/greek-philosophers-book-24585kv.php |
Q:
"Visual Basic 2015" convert Ascii to Characters fails why
I am doing the following conversion from Numeric Ascii values to their respective characters in Visual Basic but it fails miserably:
Here the value given in pth has already been converted to Ascii values so what you see in the variable textval variable is the ascii equivalint of the path
Dim i As Integer
Dim dec As String
Dim original As Integer
Dim sentence As String
Dim inter As String
Dim pth =" c:\TESTER:\JESTER\MESTER "
textval="32 99 58 92 84 69 83 84 69 82 58 92 74 69 83 84 69 82 92 77 69 83 84 69 82 32"
textval = Trim(textval)
'Dim ts() As String = Split(textval)
Dim words As String() = textval.Split(New Char() {" "c})
Label1.Text = words(0) + words(1) + words(2)
original = Int(ts(2))
the above code does not give any value for words(2) the second character which is a COLON ":" or for the ascii number 2961
How Can I correct this problem and make this more universal to take any special characters as well?
Thanks in advance for your valuable answers.
A:
You don't convert the integer value to a character. You have to use Chr or ChrW to solve this. See the following code example:
solution using Chr:
Dim textValues1 As String = "32 99 58 92 84 69 83 84 69 82 58 92 74 69 83 84 69 82 92 77 69 83 84 69 82 32"
textValues1 = textValues1.Trim
Dim textWords1 As String() = textValues1.Split(New Char() {" "c})
Dim strValue1 As String = ""
For i As Integer = 0 To UBound(textWords1)
Dim numValue As Integer = 0
If Integer.TryParse(textWords1(i), numValue) Then
strValue1 &= Chr(CInt(numValue))
End If
Next
Debug.Print(strValue1) 'output: c:\TESTER:\JESTER\MESTER
solution using ChrW:
Dim textValues2 As String = "32 99 58 92 84 69 83 84 69 82 58 92 74 69 83 84 69 82 92 77 69 83 84 69 82 32"
textValues2 = textValues2.Trim
Dim textWords2() As String = textValues2.Split(New Char() {" "c})
Dim strValue2 As String = ""
For j As Integer = 0 To UBound(textWords2)
Dim numValue As Integer = 0
If Integer.TryParse(textWords2(j), numValue) Then
strValue2 &= ChrW(CInt(numValue))
End If
Next
Debug.Print(strValue2) 'output: c:\TESTER:\JESTER\MESTER
| |
← Lame Adventure 86: Please Do Stop the Music!
Whenever I have extra pennies, nickels or dimes, I deposit them into my change jar and note the amount on the blank side of one of my yet to be published literary masterpieces since I am a staunch believer in recycling the trash. When I calculate that I’ve crossed the $35 threshold, and my change jar rivals the weight of Milton’s right foot, I haul it over to my bank’s penny saver machine to cash it out.
Milton's right foot playing the diva.
35 bucks in a jar.
Earlier this month, when I last accomplished this task, I stood in line behind a kindred spirit approximately one-tenth my age that was carrying her change in a Dora the Explorer bank. Ah, my peer!
My change jar should now contain $2.10, but at this moment, it only holds $2.04 because when I was recently going to deposit 44 cents into it, I noticed that one of my nickels was minted in 1939 and a penny was from Canada. I wondered, “Wow, what are the odds of that?” My mind was more focused on the 1939 nickel when that thought crossed it.
The penny I would later recycle at my grocery store, Fairway, in a smooth as gravel transaction.
Surly Cashier: This isn’t American. It’s from Canada.
Me: Actually, like the US, Canada is in North America. You know, the other day, I got this penny in my change from one of your colleagues.
Returning to the topic of my 1939 nickel, according to Wikipedia 1939 was indeed a banner year for the Jefferson profile nickel for only a mere 120,615,000 were minted without a Philadelphia “P” mint mark – just like mine! The world’s population back then was approximately 2.3 billion, so this further puts into perspective just how rare indeed that nickel was. For example, I am sure that very few goat herders in Tibet had a 1939 nickel in those days, but here I am, 71 years later, residing in the heart of Manhattan, and one just falls into my wallet.
After conducting further research I learned something intriguing, 1939 was one of the dates that counterfeiter Francis Leroy Henning of Erial, New Jersey used on the nickels he produced. He minted approximately half a million and 100,000 Henning nickels entered circulation in 1954. He was arrested the following year, served three years in prison, and fined $5000. It is believed that he dumped many of his nickels in Copper Creek and the Schuylkill River in New Jersey, but they were never recovered. Even if he was tempted, I doubt that he pressed his luck with the authorities and paid his fine in Jefferson profile coins. Although it is technically illegal to own a counterfeit, Henning nickels dated 1939, 1944, 1946, 1947 and 1953, with one more date still undiscovered, are worth between $20 and $30. The telltale signs of a Henning nickel are a hole in the “R” in Pluribus and the lack of a P mintmark in the ones dated 1944.
Henning nickel -- see hole in R in Pluribus.
Therefore, it appears that seventy-one years later, my 1939 nickel is worth all of five cents. Hence, the title of this post.
This entry was posted in Humor and tagged 1939 nickel, canadian penny, Fairway, francis leroy henning, henning nickel, serena williams. Bookmark the permalink. | https://lameadventures.com/2010/08/18/lame-adventure-87-chump-change/ |
This 4-Bedroom Suite sleeps 10 people and features 2 full bathrooms, full kitchen, living room, fireplace, tv (Netflix Ready), ski locker and in suite laundry. Room #1 has one single and one queen bed with en-suite bathroom. Room #2 has one single and one queen bed. Room #3 has one twin bunk bed. Room #4 has one twin bunk bed.
Ski In/Ski Out. Keyless entry. Free outdoor parking for 4 vehicles and Wi-Fi. No smoking. No cable tv. No daily housekeeping. This suite is pet friendly (with pet cleaning fee $75 per stay).
Highlights
The 4 bedroom suite is located on the bottom floor
|2 Queens, 2 single beds, and 2 bunk beds||Ski In/ Ski Out||Pet Friendly (Extra Charge)||Events/Weddings Allowed|
|Wifi||Flat Panel HDTV(Netflix Ready/no cable)||Children Welcome||No Smoking|
SAVE IN
Summer!
Come to Apex Mountain Lodge for a summer vacation. A fantastic base for your summer Okanagan Adventure. Lots of outdoor recreation opportunities combined with summer activities a short 30-minute drive away in Penticton and surrounding communities. Please note no restaurants or shops are open at Apex Mountain during the summer months. | http://apexmountainlodge.ca/accommodations/4-bedroom-suite/ |
Hirsh Holiday Hours 2021 [Updated 12/20/21}
For the holiday break this year, Hirsh Library will have some adjusted hours:
December 17th: 7:45am – 5pm
December 18th & 19th: Closed
December 20th – 23rd: 8am – 5pm
December 21st – 23rd: Library Service Desk Closed, remote help available until 5pm.
December 24th – January 2nd: Closed*
January 3rd: Return to regular hours (7:45am – 11pm)
*Please note, the 24th – 2nd is a Tufts University level closure, so the building will not be accessible via card swipe. Put your feet up and relax! Or go exploring!
If you need any assistance while we’re closed, you can always feel free to e-mail [email protected], and someone will get back to you. The desk will follow the above hours, but we’re here to help, and we like to make sure we always can help.
But no matter what, we here at Hirsh Library hope you have a relaxing and rejuvenating break, and we’ll see you back here in January!
The end of the semester is finally within reach! With the holidays now upon us, Hirsh Library will be operating with modified hours from Friday, December 20th through Wednesday, January 1st. The full schedule is as follows:
Friday, December 20st: 7:45am-5pm
Saturday, December 22nd-Wednesday, December 25th: Closed
Thursday, December 26th-Friday, December 27th: 7:45am-5pm
Saturday, December 28th- Sunday December 29th: Closed
Monday, December 30th-Tuesday, December 31st: 7:45am-5pm
Wednesday, January 1st: Closed
We will reopen for regular hours at 7:45am on Thursday, January 2nd.
Best wishes for a happy and healthy new year from all of us here at Hirsh!
Winter break is upon us, and Hirsh’s library hours will be changing a bit for the next two weeks. The abbreviated list is below, but you can find a full schedule right here on our site. We resume normal hours on January 2nd.
Beginning this weekend (12/16 & 12/17), the schedule will be:
Weekends: Closed
Weekdays: 8am – 5pm*
* We will be closed on the following weekdays: December 25th, December 26th, December 29th, & January 1st
We hope you all have a relaxing break, and we will see you again in January!
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A construction equipment manufacturer wanted to reduce the number of packaging suppliers and at the same time optimise its packaging in order to improve quality and reduce costs.
DS Smith Packaging Services took over the management of all the current packaging suppliers in a structured process and became the single point of contact. We then segmented the suppliers according to their capabilities and impact on the business. Service Level Agreements were then drawn up and agreed with the suppliers and their performance was measured against this.
Finally, new suppliers were introduced where identified new product developments would add value and reduce total cost and to provide competition for some of the existing suppliers. | http://www2.dssmithpackagingeurope.com/en/industrial/delta-services/delta-packaging-supplier-management/read-about-a-supplier-management-customers-experience-with-a-ds-smith-packaging-delta-psm/ |
Larpenter warns of caller scam
Terrebonne Sheriff Jerry Larpenter has warned locals of several spam calls that have been made to local numbers.
The scammers call and claim a recipient’s Social Security number has been suspended.
The scam involves a message that claims to be from a federal agency. They tell the person on the phone to call a number to resolve the issue.
When victims fall for the scam, they speak with a representative who tricks them into giving personal information or to make wire payments.
The Social Security Administration has issued warnings about the scheme, and advised recipients not to engage with anyone who calls them claiming to be from that agency. SSA employees do NOT contact citizens by telephone for official purposes.
Sheriff Larpenter said members of the public must be on guard against providing personal information like Social Security or bank account numbers to anyone they don’t know. | https://www.houmatimes.com/news/larpenter-warns-of-caller-scam/ |
The Printmaking Program prepares students to be professional artists and to teach art at the college level. Our program offers a broad range of traditional, contemporary, and innovative techniques while encouraging students to formulate and articulate their philosophical and personal concepts and translate them into visual ideas. This intensive studio experience combines critical and theoretical dialogue. We are dedicated to acquainting students with the rich and diverse world of multicultural art and its formative impact on contemporary art. Over the past three decades digital technologies have expanded the possibilities for making print-based images and objects in ways that continue to emerge. In response to these new technologies, we continuously redefine our curriculum and introduce new courses that connect students from different areas with digital imagery and the editions of multicolor prints. Our students are engaged in the creation of diverse multimedia projects that include installations, three-dimensional objects, and digital printmaking.
Faculty
Printmaking: Studio Space & Facilities
The Printmaking Program’s expansive studios offer nearly eight thousand square feet of total space, and are considered state of the art in both design and safety. A highly efficient central ventilation system creates continuous, safe air quality throughout the entire printmaking studio. Contemporary printmaking art processes include multi-media applications where traditional and cutting edge techniques merge. A partial list of equipment includes: five lithography presses, (including a 3’ x 5’ Takach press); a large inventory of stones ranging from small to very large; four relief/etching presses, (including a 4’ x 8’ Takach press), a photo-silkscreen studio with two exposure units and five vacuum printing tables large and medium format, a medium size hand paper making facility. The computer lab-room holds six computer stations with two wide-format and three medium size printers. A critique room is equipped with three walls for displaying work, a digital projector a large screen, and a long hallway gallery well suited to the display of work.
Learn more about our Printmaking facilities and equipment
Internship, Residencies and Fieldwork
Our students have many additional opportunities to work on and off campus while enrolled, complementing their academic studies. We are in close proximity to many mid-Hudson Valley art venues and artists’ studios, and there is easy access to NYC via bus for opportunities at galleries, museum’s, art studios, and numerous non-profit organizations. Several MFA Printmaking students have been awarded the Graduate Assistantship at the Samuel Dorsky Museum on campus, and Creative Research Project Grants that assist them with specific artistic projects, supporting workshops off campus and/or materials. Printmaking students have had summer internships at Pace Editions in NYC, the International Print Center innNew York, Simmelink/Sukimoto Editions,nand have worked with leading artists in the field as assistants.
Student Success
EXHIBITIONS: Our alumni are invited to exhibit at top venues around the world, including the Venice Biennial, SMTG Krakow Triennial, Tallinn Triennial, Oldenburg Triennial, Graphica Creativa Triennial, Douro Biennial, and many museums, universities and galleries.
AWARDS: Alumni awards include the New York Foundation for the Arts Fellowship in Printmaking, Drawing, and Artists Books; Fulbright Award; Southern Graphics Council International MFA Award. Several recent alumni were awarded internships at the Robert Blackburn Printmaking Workshop, NYC; two have also gone on to work as the Studio Technician there. Other residencies and internships alumni received: Lower East Side Printshop, NYC; Women’s Studio Workshop, Rosendale, NY; and Artist in Residence at The Arctic Circle, Svalbard, Norway. Our alumni are also awarded public and privately commissioned projects.
EMPLOYMENT: In addition to working as actively practicing artists, many of our alumni are professors, studio technicians, artists’ assistants, printers for leading fine art printing publishers, and exhibition specialists at universities and art venues around the world. Some recent alumni have founded their own print studios, paper studios and publishing companies, completed the Tamarind Professional Printer Program and co-founded an international art book fair.
Visiting Artists
Our close proximity to NYC facilitates visits to campus by artists, printers, critics, curators, and alumni to share their experiences. A brief list includes: Lynn Allen, Charles Beneke, Luis Camnitzer, Alicia Candiani, Combat Paper, Devraj Dakoji, Dean Dass, Ismael Frigerio, Daniel Martinez, Liliana Porter, Andres Serrano, Richard Noyce, Andrew Raftery, Phil Sanders, Tanja Softic, Juan Sanchez, Paula vonSydow, Carol Wax and Linda Weintraub. We schedule field trips to Print Week in NYC each November, and also visit area venues, and NYC print collections, galleries, studios, and museums. Print Club organizes a trip to Southern Graphics International’s Printmaking Conference each year.
Program Information:
Matthew Friday, Professor
[email protected] or (845) 257-2609
Admission Information: | https://www.newpaltz.edu/graduate-programs-new/mfa/printmaking/ |
FIELD
BACKGROUND
SUMMARY
DESCRIPTION
The present disclosure relates to air diffuser systems, methods, and apparatuses.
Many aircraft are designed to fly at high altitudes, e.g., from 10,000 feet (ft) (about 3,000 meters (m)) to upwards of 41,000 ft (about 12,500 m), while providing a safe, comfortable cabin environment. To maintain this cabin environment, a typical aircraft includes an air conditioning system, with appropriate pressure, temperature, and moisture regulation, to circulate fresh air within the passenger cabin. An aircraft air conditioning system is sometimes referred to as an air conditioning pack, an air handling system, and/or an air circulation system. An air conditioning system may circulate outside air mixed with an approximately equal amount of highly filtered air from the passenger cabin. The combined outside and filtered air is ducted to the cabin and distributed to cabin outlets throughout the cabin, typically louvers, air distribution rails, vents, and personal air outlets (e.g., eyeball gaspers above passenger seating). Air diffusers direct the ducted air into the cabin outlets.
Inside the cabin, air diffusers and outlets are generally arranged along the side walls of the cabin and sometimes along the overhead. The air flows in generally circular patterns and exits through grilles, often on either side of the cabin floor, and, on airplanes with overhead recirculation, the air may exit through overhead grilles. For commercial aircraft, the FAA (Federal Aviation Administration) requires a minimum air flow and cabin pressure. For new aircraft, the minimum air flow is 0.55 pounds per minute (lbs/min) per occupant (about 250 grams per minute (g/min) per occupant) and the minimum cabin pressure is 0.75 bar (75 kilopascal (kPa)).
The cabin air flow is continuous and is used for maintaining a comfortable cabin temperature, pressurization, and/or overall air quality. About half of the air exiting the cabin is exhausted from the airplane through one or more outflow valves in the fuselage, which also controls the cabin pressure. The other half is drawn through high efficiency filters, and then is recirculated with fresh outside air, as discussed.
For passenger comfort, air flow into the cabin should be quiet, relatively uniform, and generally unobtrusive. However, in addressing these needs, designers must balance weight and complexity with comfort.
Aircraft, air conditioning systems, and air diffusers of the present disclosure may be used to create a quiet, comfortable environment within an aircraft cabin. The systems and apparatuses may be configured to flow air at or above the FAA minimum requirement of 0.55 lbs/min per occupant (about 250 g/min per occupant) while producing a low noise level.
Aircraft cabin air diffusers, as presently disclosed, comprise an inlet section to receive air flow, an outlet section to discharge air flow into an aircraft cabin, a neck section to direct air flow from the inlet section to the outlet section, and a flow controller to passively regulate flow and/or pressure, and/or to create a vortex within the air diffuser to distribute flow and/or to reduce air flow noise. The inlet section, the neck section, and the outlet section are operatively coupled to direct air flow from the inlet section to the outlet section. The flow controller may be a passive pressure controller (configured to affect air flow through the passive pressure controller in response to an air pressure differential across the passive pressure controller) and/or a vortex inducer (configured to create a vortex of air downstream of the vortex inducer).
FIGS. 1-7
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The present disclosure relates to systems, methods, and apparatuses for diffusing air within an aircraft. are various views of aircraft , air conditioning systems , air diffusers , and associated components. In general, in the drawings, elements that are likely to be included in a given embodiment are illustrated in solid lines, while elements that are optional or alternatives are illustrated in dashed lines. However, elements that are illustrated in solid lines are not essential to all embodiments of the present disclosure, and an element shown in solid lines may be omitted from a particular embodiment without departing from the scope of the present disclosure. Elements that serve a similar, or at least substantially similar, purpose are labeled with numbers consistent among the figures. Like numbers in each of the figures, and the corresponding elements, may not be discussed in detail herein with reference to each of the figures. Similarly, all elements may not be labeled in each of the figures, but reference numerals associated therewith may be used for consistency. Elements, components, and/or features that are discussed with reference to one or more of the figures may be included in and/or used with any of the figures without departing from the scope of the present disclosure.
FIG. 1
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is a cross-sectional schematic representation of an aircraft interior illustrating where and how an air diffuser may be employed within an aircraft to circulate air in an aircraft cabin . Air flow is indicated by arrows . Air diffusers are typically part of an air conditioning system , sometimes referred to as an air conditioning pack, on board the aircraft . The air conditioning system circulates air within the aircraft cabin by providing air flow to air diffusers fluidically coupled to the aircraft cabin . The air may flow into the aircraft cabin through cabin air vents , typically along the side walls, above the stow bins, and/or along the overhead of the aircraft cabin . Further, the air conditioning system may supply air to passenger-controlled gaspers, generally above each seat.
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An aircraft may be configured to transport one or more passengers, including crew. For example, commercial aircraft may be configured to transport up to several hundred passengers. Several air diffusers , and any associated cabin air vents , may be distributed along the aircraft cabin to provide relatively uniform flow of fresh air to all occupants.
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Air diffusers may be configured to fit within the space constraints of an aircraft and/or aircraft cabin . Typically, an air conditioning system has ducts running along the length of the aircraft fuselage, often near the stow bins and the overhead in commercial transport aircraft . Air diffusers may be connected to the ducts along the fuselage and may redirect some of the air flowing in the ducts into the aircraft cabin . To accommodate this type of air flow within the space constraints, air diffusers may be generally compact and/or curved.
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Air diffusers are configured to supply air as part of an air conditioning system at a rate to maintain the comfort and health of occupants. FAA regulations currently require a minimum air flow of 0.55 lbs/min per occupant (about 250 g/min per occupant). When flying, aircraft with pressurized cabins typically maintain the air pressure at the equivalent of about 6,000-8,000 ft. altitude (about 1,800-2,400 m), which is about 0.75-0.80 bar (about 75-80 kPa). At 75 kPa and a comfortable cabin temperature of about 20-25° C., the FAA requirement corresponds to an air flow of about 10 cubic feet per minute (ft/min) per occupant (about 280 liters per minute (L/min) per occupant). An aircraft and/or an air conditioning system may incorporate more than one air diffuser to handle the required air flow and/or to distribute the air flow relatively equally among the occupants. Each air diffuser , and associated air handling components, adds weight and complexity to an aircraft . Hence, an aircraft may be designed to minimize the number of required air diffusers (thus saving weight and, ultimately, fuel and maintenance costs). Since an aircraft is rated for a certain number of occupants, including crew and passengers, a smaller number of air diffusers increases the volumetric and/or mass flow of the air that each air diffuser handles such that at least the minimum flow is achieved. The aircraft may incorporate less than one air diffuser for every two rated occupants, for every three rated occupants, and/or for every four rated occupants. For example, the aircraft may include less than 0.5, less than 0.4, less than 0.37, less than 0.33, less than 0.30, less than 0.28, less than 0.26, less than 0.24, less than 0.22, less than 0.2, about 0.4, about 0.37, about 0.33, about 0.3, about 0.25, and/or about 0.22 air diffusers per rated occupant. Air diffusers may be configured to handle air flow of about the required rate or greater. For example, air diffusers may be configured to flow air at greater than 700 g/min, greater than 800 g/min, greater than 900 g/min, greater than 1,000 g/min, greater than 1,100 g/min, greater than 1,200 g/min, less than 1,500 g/min, less than 1,200 g/min, 800-1,200 g/min, greater than 800 L/min, greater than 900 L/min, greater than 1,000 L/min, greater than 1,100 L/min, greater than 1,200 L/min, greater than 1,300 L/min, less than 1,500 L/min, less than 1,300 L/min, and/or 900-1,300 L/min.
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An air diffuser may be employed in an aircraft and/or an air conditioning system to circulate air in an aircraft cabin . Circulating may include supplying air to an aircraft cabin through the air diffuser . The air diffusers may be configured to supply the aircraft cabin with a generally uniform air flow and/or with an air flow of at least 250 g/min per rated occupant. Further, circulating may include maintaining an air pressure in an aircraft cabin sufficient for safe, comfortable travel. For example, the air pressure may be greater than 60 kPa, greater than 70 kPa, greater than 75 kPa, greater than 80 kPa, greater than 90 kPa, greater than 100 kPa, less than 120 kPa, less than 100 kPa, less than 80 kPa, 70-80 kPa, 70-90 kPa, 70-102 kPa, about 90 kPa, about 80 kPa, and/or about 75 kPa. Unless stated clearly otherwise, all air pressure values are absolute air pressure values.
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Air diffusers may be configured and/or used to establish a relatively quiet aircraft cabin environment by creating a sound level not substantially more than other ambient noise in an aircraft cabin , at least at some frequencies that interfere with speech and/or at high frequencies. At higher flow rates, conventional air conditioning systems may make aircraft cabins noisy. However, the air diffusers of the present disclosure may be configured to provide quiet air flow, even at high flow rates, without compromising the typical space and weight constraints of conventional air diffusers. Aircraft cabins may have many noise sources, particularly when the aircraft is flying. Air diffusers may be configured to contribute little to the overall sound level in an aircraft cabin . The sound level from an air diffuser in use may be less than 20 decibels (dB), less than 10 dB, less than 5 dB, less than 3 dB, less than 2 dB, or less than 1 dB more than other ambient noise in aircraft cabin , at least at particular frequencies. For comparison, typical ambient noise in an aircraft cabin such as aircraft cabin may be greater than 45 dB, greater than 50 dB, greater than 55 dB, greater than 60 dB, greater than 65 dB, greater than 70 dB, greater than 75 dB, greater than 80 dB, and/or greater than 85 dB. The sound level contribution from an air diffuser may include frequencies of 0.1 kilohertz (kHz), 0.2 kHz, 0.5 kHz, 1 kHz, 2 kHz, 3 kHz, 4 kHz, 5 kHz, 8 kHz, 10 kHz, 12 kHz, 15 kHz, 20 kHz, 0.1-10 kHz, 0.5-4 kHz, 1-4 kHz, 2-4 kHz, 3-10 kHz, 5-10 kHz, greater than 5 kHz, and/or greater than 8 kHz. An alternate measure of interfering sound level is the speech interference level (SIL). The SIL is the arithmetic mean of the sound levels of a noise at three bands with center frequencies of 1 kHz, 2 kHz, and 4 kHz. These bands contain the frequencies that are most important for speech communication. The SIL of an air diffuser in use may be less than 55 dB, less than 52 dB, less than 50 dB, less than 48 dB, less than 46 dB, or less than 44 dB.
FIG. 2
FIG. 2
FIG. 2
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shows an example of two air diffusers as part of an air conditioning system . In the figure, the two air diffusers are arranged to supply air into an aircraft cabin through one or more cabin air vents . Each air diffuser may be arranged to supply air through a dedicated air vent , as shown in solid line in , or at least two air diffusers optionally may be arranged to supply air through a single, shared air vent (also called an air rail), as shown in dotted line in . Air diffusers generally are configured to accept input air flow through an entrance, also called an air diffuser upstream end , to transmit the air flow through the air diffuser, and to spread the air flow through a relatively wide exit, also called an air diffuser downstream end . The air diffusers may be configured, each independently, to supply air at a substantially constant volumetric flow rate, mass flow rate, pressure, and/or flow velocity into the aircraft cabin, provided that the air conditioning system is supplying a minimum threshold of air (volume, mass, and/or pressure) to each air diffuser . Thus, the air conditioning system may be configured to control the supply of air into the aircraft cabin through the configuration of the air diffusers rather than the volume, mass, and/or pressure of air delivered to the air diffusers .
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Air diffusers comprise an inlet section , proximate to an air diffuser upstream end , an outlet section , proximate to an air diffuser downstream end , and a neck section that spans between the inlet section and the outlet section . Each of these sections, and the air diffuser as a whole, has an open interior, or a channel, to allow air to flow through the section and air diffuser . Hence, the sections, and the air diffuser , may be described as being hollow, defining a cavity, defining an open volume, and/or being porous. Each of the sections is operatively connected to (and/or extends from) the neighboring section(s) such that air may flow into the inlet section , through the neck section , and out the outlet section . The sections may each be composed of one or more parts. Two or more sections may share component parts. For example, one monolithic piece may include an inlet section , a neck section , and an outlet section . As another example, the inlet section may be one piece, the neck section may be a second piece, and the outlet section may be a third piece of an air diffuser assembly.
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FIG. 2
Generally, each section has an upstream end (the end configured to receive air flow) and a downstream end (the end configured to emit air flow). The inlet upstream end is proximate to the air diffuser upstream end , the end where air flow is configured to enter the air diffuser . The outlet downstream end is proximate to the air diffuser downstream end , the end where air flow is configured to exit the air diffuser . The inlet section at the inlet downstream end is operatively coupled to the neck section at the neck upstream end . The neck section at the neck downstream end is operatively coupled to the outlet section at the outlet upstream end . As illustrated in , the sections each independently may be smooth and arcuate (illustrated in solid lines) or angular and boxy (illustrated in dash-dot lines). Additionally or alternatively, the transitions between the sections may be abrupt or smooth.
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Air diffusers also comprise a flow controller within the air flow path of the air diffuser . The flow controller is spaced away from the air diffuser upstream end and the air diffuser downstream end , and may be at least partially in the interior of one or more of the inlet section , the neck section , and the outlet section . Generally, the flow controller is located toward the air diffuser upstream end , generally within and/or proximate to the neck section . As discussed further herein, flow controllers may be passive pressure controllers and/or vortex inducers , i.e., flow controllers may affect the speed and/or direction of air flow through the air diffuser . Generally, flow controllers include one or more vanes that separate one or more flow channels that allow air to flow through the flow controller from the flow controller upstream end to the flow controller downstream end .
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Air diffusers are three dimensional objects which may be oriented in a variety of ways. To facilitate discussion of features, structures, and components of air diffusers , this disclosure makes reference to three orthogonal directions, indicated by coordinate frame : a longitudinal direction (indicated as the y-direction), a lateral direction (indicated as the x-direction), and a transverse direction (indicated as the z-direction). The longitudinal direction is a direction along the geometric center of the air diffuser following the direction of bulk air flow through the air diffuser , spanning the air diffuser from the air diffuser upstream end to the air diffuser downstream end . As discussed further herein, air diffusers generally are curved and/or define a curved bulk air flow path, and, hence, the longitudinal direction is likewise curved. The lateral direction is orthogonal to the longitudinal direction and generally traverses the widest portion of the air flow channel within the air diffuser . A dimension of the air diffuser along the lateral direction is referred to as a lateral width. The transverse direction is orthogonal to both the longitudinal direction and the lateral direction. A dimension of the air diffuser along the transverse direction is referred to as a transverse breadth.
FIG. 3
FIGS. 4-5
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is a schematic representation of an air diffuser illustrating the general structure, location and order of the various subcomponents. are perpendicular cross sections of an illustrative, non-exclusive example of an air diffuser .
FIGS. 3-5
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With reference to , air diffusers may be characterized by an air channel length , the length of the geometrical center of the bulk air flow path from the air diffuser upstream end to the air diffuser downstream end . Further, air diffusers may be characterized by a characteristic dimension measured perpendicular to the longitudinal direction, for example a lateral width, a transverse breath, a diameter and/or an effective diameter.
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The inlet section of an air diffuser is located proximate to the air diffuser upstream end and may be located at the air diffuser upstream end . The inlet section generally is configured to create a diverging flow, i.e., the inlet section defines an air flow path that is substantially diverging. However, the inlet section may be configured to create a generally straight flow, i.e., the inlet section defines an air flow path that is substantially straight. In one configuration to create a generally diverging air flow path, the inlet upstream end is smaller than the inlet downstream end . Specifically, the inlet section may define an open area, the total cross-sectional area that may allow a fluid to pass, that is smaller at the inlet upstream end than at the inlet downstream end .
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Generally, the inlet section may be tubular, hollow, and/or define an open volume. The inlet section may be a tube, a generally cylindrical shell, and/or a generally tapered shell. The interior profile (the shape of the cross section of the interior) at the inlet upstream end and/or at the inlet downstream end may be substantially round and/or substantially oval.
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The inlet section may be characterized by an inlet central axis between the inlet upstream end and the inlet downstream end . A central axis is a line that traverses the geometric centroid of each cross section perpendicular to the longitudinal dimension of an object. The central axis generally extends along the longitudinal direction and generally follows the contour of the object. In the inlet section , the inlet central axis generally describes the unobstructed flow of air through the inlet section . The inlet central axis typically is a substantially straight line between the center of the inlet upstream end and the inlet downstream end . Between the inlet upstream end and the inlet downstream end , and generally along the inlet central axis , the inlet section may be elongated. The length of the central axis may be greater than 4 millimeters (mm), greater than 6 mm, greater than 8 mm, greater than 10 mm, greater than 12 mm, greater than 15 mm, greater than 20 mm, greater than 25 mm, greater than 30 mm, greater than 40 mm, greater than 50 mm, greater than 60 mm, greater than 80 mm, greater than 100 mm, less than 150 mm, less than 100 mm, less than 80 mm, less than 60 mm, less than 50 mm, 4-100 mm, and/or 10-80 mm.
20
40
14
12
40
25
20
FIG. 4
The inlet section may be configured to direct some air flow away from the outlet section of the air diffuser . Such flow may be directed to gaspers and/or other components of the air conditioning system . Flow may be directed away from the outlet section by including one or more branching tubes along the inlet section , as best viewed in .
FIGS. 3-5
30
14
20
40
30
35
31
36
32
37
31
32
35
31
22
36
32
41
Returning to the broader discussion of , the neck section of an air diffuser is generally a transition section between the inlet section and the outlet section . The neck section may include a neck first region , proximate to the neck upstream end , a neck second region , proximate to the neck downstream end , and/or a neck transition region between the neck upstream end and the neck downstream end . The neck first region and/or the neck upstream end may be configured to couple, and/or be operatively coupled, to the inlet downstream end . The neck second region and/or the neck downstream end may be configured to couple, and/or be operatively coupled, to the outlet upstream end .
30
38
31
32
38
30
38
28
38
31
32
31
32
38
30
38
The neck section may be characterized by a neck central axis between the neck upstream end and the neck downstream end . The neck central axis generally describes the unobstructed flow of air through the neck section . Generally, the neck central axis is continuous with the inlet central axis . The neck central axis may be a substantially straight line or may be a substantially curved line between the center of the neck upstream end and the neck downstream end . Between the neck upstream end and the neck downstream end , and generally along the neck central axis , the neck section may be elongated. The length of the central axis may be greater than 10 mm, greater than 12 mm, greater than 15 mm, greater than 20 mm, greater than 25 mm, greater than 30 mm, greater than 40 mm, greater than 50 mm, greater than 60 mm, greater than 80 mm, greater than 100 mm, greater than 150 mm, greater than 200 mm, greater than 300 mm, greater than 400 mm, greater than 500 mm, less than 500 mm, less than 400 mm, less than 300 mm, less than 200 mm, less than 150 mm, less than 100 mm, less than 80 mm, less than 60 mm, less than 50 mm, 20-500 mm, and/or 50-300 mm.
30
30
35
36
31
32
31
32
32
31
31
32
31
32
37
38
Generally, the neck section may be tubular, hollow, and/or define an open volume. The neck section may be a tube, a generally cylindrical shell, and/or generally an open box. For example, the neck first region may be a tube and/or a generally cylindrical shell. As another example, the neck second region may be a tube and/or generally an open box. The interior profile at the neck upstream end may be substantially round and/or substantially oval. The interior profile at the neck downstream end may be substantially round, substantially oval, substantially oblong, and/or substantially rectangular. Generally, the interior profile at the neck upstream end is different than the interior profile at the neck downstream end . Where the profiles differ, the interior profile at the neck downstream end may be larger in one direction (e.g., the lateral direction) and smaller in a perpendicular direction (e.g., the transverse direction) than the interior profile at the neck upstream end . The open area at the neck upstream end may be the same as or different than (e.g., smaller than) the open area at the neck downstream end . Even where the interior profiles differ, the open area at the neck upstream end may be the same as the open area at the neck downstream end . The neck transition region , when present, has a non-uniform interior profile, i.e., an interior profile that changes along the neck central axis .
30
31
80
30
32
81
80
30
31
80
80
81
30
32
82
80
30
31
82
80
81
82
82
81
80
30
31
81
81
38
FIG. 4
FIG. 5
The interior of the neck section at the neck upstream end may be characterized by a characteristic dimension that is a lateral width, a transverse breadth, a diameter, and/or an effective diameter. The interior of the neck section at the neck downstream end may have a lateral width that is larger than the characteristic dimension of the interior of the neck section at the neck upstream end , as best viewed in . The characteristic dimension may be greater than 20 mm, greater than 30 mm, greater than 40 mm, greater than 50 mm, greater than 70 mm, greater than 100 mm, greater than 150 mm, less than 200 mm, less than 150 mm, less than 100 mm, less than 70 mm, less than 50 mm, 20-150 mm, and/or 50-100 mm. The ratio of the characteristic dimension to the lateral width may be less than 50%, less than 40%, less than 30%, less than 25%, less than 20%, less than 15%, less than 12%, less than 10%, less than 8%, 8-50%, 8-25%, about 20%, about 15%, and/or about 12%. The interior of the neck section at the neck downstream end may have a transverse breadth that is about equal to or smaller than the characteristic dimension of the interior of the neck section at the neck upstream end , as best viewed in . The ratio of the transverse breadth to the characteristic dimension may be less than 120%, less than 100%, less than 80%, less than 60%, less than 50%, less than 40%, less than 30%, less than 25%, less than 20%, 20-100%, 30-50%, about 100%, about 50%, about 33%, and/or about 25%. The lateral width may be larger than the transverse breadth . The ratio of the transverse breadth to the lateral width may be less than 50%, less than 40%, less than 30%, less than 25%, less than 20%, less than 15%, less than 12%, less than 10%, less than 8%, less than 7%, less than 6%, less than 5%, less than 4%, 4-40%, 5-25%, 10-25%, about 25%, about 20%, about 15%, and/or about 12%. The characteristic dimension of the interior of the neck section at the neck upstream end may be greater than 20 mm, greater than 30 mm, greater than 40 mm, greater than 50 mm, greater than 60 mm, greater than 80 mm, greater than 100 mm, less than 100 mm, less than 80 mm, less than 60 mm, less than 50 mm, 30-100 mm, and/or 40-60 mm. The lateral width may be greater than 100 mm, greater than 200 mm, greater than 300 mm, greater than 400 mm, greater than 500 mm, less than 500 mm, less than 400 mm, less than 300 mm, less than 200 mm, 100-500 mm, 200-300 mm, and/or about 280 mm. The lateral width may be substantially the same as or less than the length of the neck central axis .
FIGS. 3-5
30
38
31
32
30
31
32
81
30
32
Returning to the broader discussion of , the neck section generally defines a smooth air flow path, approximately following the neck central axis , from the neck upstream end to the neck downstream end . The air flow path may be substantially straight or substantially curved. Generally, the neck section is configured to direct air entering the neck upstream end into a different direction upon exiting the neck downstream end . The air flow path may be characterized by the central axis of the air flow. Where the air flow path is curved, the air flow central axis may have a compound curvature, including bends and/or twists in multiple directions. For example, the plane of principal curvature may be substantially orthogonal to the lateral direction, e.g., the direction along the lateral width of the interior of the neck section at the neck downstream end .
30
37
30
30
Within the interior, the neck section generally has a smooth interior profile. Where the interior profile changes, such as along the neck transition region , the interior may have few to no features that could cause significant turbulence and/or undesired turbulence. For example, the interior of the neck section may have arcuate surfaces, rounded corners, no sharp corners, and/or be essentially free of sharp corners. Additionally or alternatively, the neck section may have an angular interior profile and/or an angular interior section which may cause significant turbulence.
30
39
14
39
39
39
39
30
30
39
39
30
39
30
30
39
30
88
87
87
39
88
39
FIGS. 4 and 5
The neck section may include neck sound dampening material to reduce noise generated by air flowing through the air diffuser . The neck sound dampening material may include a material and/or structure that attenuates, reflects, and/or redirects sound, at least at particular frequencies. The neck sound dampening material may be essentially free of volatile substances and/or particulates that may circulate with the air flow. The neck sound dampening material may be essentially fire resistant and/or resist formation of smoke, vapors, and/or particulate. For example, the neck sound dampening material may include aramid fibers, e.g., products sold under the trade names NOMEX, KEVLAR, TWARON, and TECHNORA (“Nomex” and “Kevlar” are registered trademarks of E. I. du Pont de Nemours and Company of Wilmington, Del.; “Twaron” is a registered trademark of Teijin Aramid B.V. LLC of Arnhem, The Netherlands; and “Technora” is a registered trademark of Teijin Techno Products Limited Corp. of Osaka, Japan). Generally, the neck sound dampening material is located along the interior surface(s) of the neck section and may be directly or indirectly coupled to an interior surface of the neck section . The neck sound dampening material may be composed of a continuous section of material and/or a patchwork of material sections. The neck sound dampening material may cover all, substantially all, most, and/or a majority of the interior of the neck section . For example, the neck sound dampening material may cover greater than 20%, greater than 40% greater than 50%, greater than 60%, greater than 75%, greater than 90%, about 50%, about 75%, or about 100% of the interior surface area of the neck section . The neck section may be completely free or selectively free of neck sound dampening material . For example, where the interior of the neck section generally has a transverse surface and a lateral surface (as best viewed in respectively), the lateral surface may be substantially covered by neck sound dampening material and/or the transverse surface may be substantially free of neck sound dampening material .
FIGS. 3-5
40
14
18
18
40
14
42
Returning to the broader discussion of , the outlet section of an air diffuser is located proximate to the air diffuser downstream end and may be located at the air diffuser downstream end . The outlet section generally is configured to create a broad, uniform flow, at the volume and/or mass flow rates described herein with respect to the air diffuser as a whole, at the outlet downstream end .
40
48
41
42
48
40
48
38
48
41
42
41
42
48
40
48
The outlet section may be characterized by an outlet central axis between the outlet upstream end and the outlet downstream end . The outlet central axis generally describes the unobstructed flow of air through the outlet section . Generally, the outlet central axis is continuous with the neck central axis . The outlet central axis may be a substantially straight line or may be a substantially curved line between the center of the outlet upstream end and the outlet downstream end . Between the outlet upstream end and the outlet downstream end , and generally along the outlet central axis , the outlet section may be elongated. The length of the central axis may be greater than 10 mm, greater than 12 mm, greater than 15 mm, greater than 20 mm, greater than 25 mm, greater than 30 mm, greater than 40 mm, greater than 50 mm, greater than 60 mm, greater than 80 mm, greater than 100 mm, greater than 150 mm, greater than 200 mm, greater than 300 mm, greater than 400 mm, greater than 500 mm, less than 500 mm, less than 400 mm, less than 300 mm, less than 200 mm, less than 150 mm, less than 100 mm, less than 80 mm, less than 60 mm, less than 50 mm, 10-300 mm, and/or 20-100 mm.
40
40
41
42
Generally, the outlet section may be tubular, hollow, and/or define an open volume. The outlet section may be a tube, generally an open box, and/or generally an open tapered box. The interior profile at the outlet upstream end and/or the outlet downstream end may be substantially round, substantially oval, substantially oblong, and/or substantially rectangular.
40
41
83
84
40
42
85
86
84
41
83
41
86
42
85
42
83
41
85
42
83
41
85
42
84
41
86
42
84
41
86
42
48
85
42
FIG. 4
FIG. 5
FIG. 4
FIG. 5
The interior of the outlet section at the outlet upstream end may be non-cylindrically symmetric and may have a lateral width (as best view in ) that is larger than the transverse breadth (as best viewed in ). Similarly, the interior of the outlet section at the outlet downstream end may be non-cylindrically symmetric and may have a lateral width (as best viewed in ) that is larger than the transverse breadth (as best viewed in ). The ratio of the transverse breadth at the outlet upstream end to the lateral width at the outlet upstream end may be less than 50%, less than 40%, less than 30%, less than 25%, less than 20%, less than 15%, less than 12%, less than 10%, less than 8%, less than 7%, less than 6%, less than 5%, less than 4%, 4-40%, 5-25%, 10-25%, about 25%, about 20%, about 15%, and/or about 12%. The ratio of the transverse breadth at the outlet downstream end to the lateral width at the outlet downstream end may be less than 50%, less than 40%, less than 30%, less than 25%, less than 20%, less than 15%, less than 12%, less than 10%, less than 8%, less than 7%, less than 6%, less than 5%, less than 4%, 4-40%, 5-25%, 10-25%, about 25%, about 20%, about 15%, and/or about 12%. The lateral width at the outlet upstream end and/or the lateral width at the outlet downstream end may be greater than 100 mm, greater than 200 mm, greater than 300 mm, greater than 400 mm, greater than 500 mm, less than 500 mm, less than 400 mm, less than 300 mm, less than 200 mm, 100-500 mm, 200-300 mm, and/or about 280 mm. The lateral width at the outlet upstream end is generally about the same as the lateral width at the outlet downstream end . The transverse breadth at the outlet upstream end and/or the transverse breadth at the outlet downstream end may be greater than 10 mm, greater than 20 mm, greater than 30 mm, greater than 40 mm, greater than 50 mm, greater than 70 mm, greater than 100 mm, greater than 150 mm, less than 200 mm, less than 150 mm, less than 100 mm, less than 70 mm, less than 50 mm, less than 40 mm, less than 30 mm, less than 20 mm, 10-200 mm, 20-100 mm, 20-70 mm, about 20 mm, and/or about 50 mm. The transverse breadth at the outlet upstream end is generally greater than and/or about equal to the transverse breadth at the outlet downstream end . The length of the outlet central axis may be less than 80%, less than 60%, less than 50%, less than 40%, less than 30%, less than 25%, less than 20%, 20-80%, 25-60%, about 60%, about 50%, and/or about 40% of the lateral width at the outlet downstream end .
FIGS. 3-5
40
48
41
42
40
41
42
83
40
41
Returning to the broader discussion of , the outlet section generally defines an air flow path, approximately following the outlet central axis , from the outlet upstream end to the outlet downstream end . The air flow path may be substantially straight or substantially curved. Generally, the outlet section may be configured to direct air entering the outlet upstream end into a different direction upon exiting the outlet downstream end . The air flow path may be characterized by the central axis of the air flow. Where the air flow path is curved, the air flow central axis may have a compound curvature, including bends and/or twists in multiple directions. For example, the plane of principal curvature may be substantially orthogonal to the lateral direction, e.g., the direction along the lateral width of the interior of the outlet section at the outlet upstream end .
40
41
42
41
41
The air flow may converge within the outlet section . In one configuration to create a generally converging air flow path, the outlet upstream end is larger than the outlet downstream end . Specifically, the outlet section may have an open area at the outlet upstream end that is larger than the open area at the outlet downstream end .
40
49
14
49
39
39
39
49
40
40
49
49
40
49
40
40
49
40
90
89
89
49
90
49
FIGS. 4 and 5
The outlet section may include outlet sound dampening material to reduce noise generated by air flow through the air diffuser . The outlet sound dampening material may be the same material as optional neck sound dampening material , may have similar characteristics as the optional neck sound dampening material , and/or may be continuous with the optional neck sound dampening material . Generally, the outlet sound dampening material is located along the interior surface(s) of the outlet section and may be directly or indirectly coupled to an interior surface of the outlet section . The outlet sound dampening material may be composed of a continuous section of material and/or a patchwork of material sections. The outlet sound dampening material may cover all, substantially all, most, and/or a majority of the interior of the outlet section . For example, the outlet sound dampening material may cover greater than 20%, greater than 40% greater than 50%, greater than 60%, greater than 75%, greater than 90%, about 50%, about 75%, or about 100% of the interior of the outlet section . The outlet section may be completely free or selectively free of outlet sound dampening material . For example, where the interior of the outlet section generally has a transverse surface and a lateral surface (as best viewed in respectively), the lateral surface may be substantially covered by outlet sound dampening material and/or the transverse surface may be substantially free of outlet sound dampening material .
FIGS. 3-5
14
50
14
20
30
20
30
50
22
31
50
20
30
Returning to the broader discussion of , the air diffuser also comprises a flow controller , which is located generally in the interior of air diffuser , typically within the inlet section , the neck section , and/or the interface between the inlet section and the neck section . The flow controller may be proximate to the inlet downstream end and the neck upstream end . Further, the flow controller may be configured to couple, and/or be operatively coupled, to the inlet section and/or the neck section .
50
14
50
17
21
51
22
52
32
42
18
The flow controller may be configured to create an air pressure differential, thereby regulating the downstream air pressure within and/or exiting the air diffuser . The pressure differential, when present, is generated within and/or by the flow controller . Hence, the flow controller may be configured to create and/or maintain a pressure differential from the air diffuser upstream end , the inlet upstream end , and/or the flow controller upstream end (generally the high pressure end) to the inlet downstream end , the flow controller downstream end , the neck downstream end , the outlet downstream end , and/or the air diffuser downstream end (generally the low pressure end). The pressure differential may be a pressure above a predetermined threshold, a pressure range, and/or a differential pressure of greater than 2 kPa, greater than 4 kPa, greater than 6 kPa, greater than 8 kPa, greater than 10 kPa, greater than 15 kPa, greater than 20 kPa, less than 20 kPa, less than 15 kPa, less than 10 kPa, less than 8 kPa, less than 6 kPa, less than 4 kPa, and/or 2-10 kPa.
50
14
50
51
52
50
17
21
22
32
42
18
50
17
21
14
25
20
50
The flow controller may be configured to create flow resistance, thereby regulating the total flow (e.g., regulating the volumetric flow, the mass flow, and/or the pressure) of air within, and/or into, the air diffuser . The flow resistance, when present, is generated across the flow controller from the upstream end to the downstream end . Hence, the flow controller may be configured to restrict air flow from the air diffuser upstream end and/or the inlet upstream end to the inlet downstream end , the neck downstream end , the outlet downstream end , and/or the air diffuser downstream end . Additionally or alternatively, the flow controller may be configured to create backpressure at the air diffuser upstream end and/or the inlet upstream end . The backpressure may be used to regulate and/or restrict air flow through the air diffuser and/or may be used to direct air flow through auxiliary air conditioning system components, e.g., through optional branching tube (which may ultimately direct air to personal air outlets, e.g., gaspers). Where the inlet section defines a diverging air flow path, the expansion of the air flow volume upstream of the flow controller may increase the static air pressure in that region (relative to no expansion). The static pressure may be used to direct air flow through auxiliary air conditioning system components.
50
54
56
50
54
56
54
50
54
54
56
The flow controller generally includes one or more vanes that define one or more flow channels that are configured to transmit air through the flow controller . Vanes generally are oriented to direct air through the flow channels . Vanes also may be described as a blade, a membrane, a diaphragm, a flap, a leaf, a leaflet, a fin, a ridge, a nodule, a baffle, a louver, a disc, and/or a poppet. The flow controller may include 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 2-12, 4-12, 6-10, at least 5, at least 8, and/or at least 12 vanes . The vanes may define 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 2-12, 4-12, 6-10, at least 5, at least 8, and/or at least 12 flow channels .
50
14
20
30
50
50
50
50
17
50
18
50
18
79
50
Generally, the flow controller is configured to fit within the air diffuser , typically within the inlet section and/or the neck section , the flow controller having a profile substantially the same as the interior of the nearby section. The flow controller may have a characteristic dimension, i.e., a lateral width, a transverse breadth, a diameter, and/or an effective diameter, that is greater than 30 mm, greater than 40 mm, greater than 50 mm, greater than 60 mm, greater than 80 mm, greater than 100 mm, less than 100 mm, less than 80 mm, less than 60 mm, less than 50 mm, 30-100 mm, and/or 40-60 mm. The flow controller may have a thickness that is less than 8 mm, less than 6 mm, less than 4 mm, less than 3 mm, less than 2 mm, greater than 1 mm, greater than 2 mm, greater than 3 mm, greater than 4 mm, 1-8 mm, and/or 2-4 mm. The flow controller may be spaced away from the air diffuser upstream end by greater than 4 mm, greater than 6 mm, greater than 8 mm, greater than 10 mm, greater than 12 mm, greater than 15 mm, greater than 20 mm, greater than 25 mm, greater than 30 mm, greater than 40 mm, greater than 50 mm, greater than 60 mm, greater than 80 mm, greater than 100 mm, less than 150 mm, less than 100 mm, less than 80 mm, less than 60 mm, less than 50 mm, 4-100 mm, and/or 10-80 mm. The flow controller may be spaced away from the air diffuser downstream end by greater than 20 mm, greater than 25 mm, greater than 30 mm, greater than 40 mm, greater than 50 mm, greater than 60 mm, greater than 80 mm, greater than 100 mm, greater than 150 mm, greater than 200 mm, greater than 300 mm, greater than 400 mm, greater than 500 mm, less than 500 mm, less than 400 mm, less than 300 mm, less than 200 mm, less than 150 mm, less than 100 mm, less than 80 mm, less than 60 mm, less than 50 mm, 50-500 mm, and/or 100-300 mm. The distance between the flow controller and the air diffuser downstream end along the longitudinal direction is also called the air channel length downstream of the flow controller .
50
70
70
14
70
70
20
70
20
70
70
The flow controller may include, and optionally may be, a passive pressure controller . The passive pressure controller , when present, is a passive device that, in response to conditions within the air diffuser , changes its configuration, conformation, geometry, etc. The changes to the passive pressure controller are induced by the conditions without resort to an actuator or external control. For example, the passive pressure controller may be directly or indirectly actuated by air pressure in the inlet section (e.g., by air velocity changes through the passive pressure controller that result in air pressure changes in the inlet section ). Generally, the passive pressure controller may be regarded as a normally-open passive valve that partially closes in response to air flow through the valve and/or air pressure upstream of the valve. For example, the passive pressure controller may include, and optionally may be, a normally-open valve, a poppet valve, a butterfly valve, a diaphragm valve, and/or a pressure regulator.
70
70
70
70
70
20
The passive pressure controller may be configured to affect air flow through the passive pressure controller in response to a pressure differential across the passive pressure controller . For example, the passive pressure controller may be configured to maintain a substantially constant air flow through the passive pressure controller when an air pressure in the inlet section is greater than a predefined threshold. The substantially constant air flow may be greater than 700 g/min, greater than 800 g/min, greater than 900 g/min, greater than 1,000 g/min, greater than 1,100 g/min, greater than 1,200 g/min, less than 1,500 g/min, less than 1,200 g/min, 800-1,200 g/min, greater than 800 L/min, greater than 900 L/min, greater than 1,000 L/min, greater than 1,100 L/min, greater than 1,200 L/min, greater than 1,300 L/min, less than 1,500 L/min, less than 1,300 L/min, and/or 900-1,300 L/min. The related predefined threshold pressure may be greater than 60 kPa, greater than 70 kPa, greater than 75 kPa, greater than 80 kPa, greater than 90 kPa, greater than 100 kPa, less than 120 kPa, less than 100 kPa, 70-120 kPa, 70-102 kPa, 70-90 kPa, about 90 kPa, about 80 kPa, and/or about 75 kPa.
70
14
14
12
12
14
14
14
14
70
11
17
12
FIG. 2
By maintaining a substantially constant flow through the passive pressure controller , and, therefore, the air diffuser , air diffusers are configured to reject excess upstream air flow in the associated air conditioning system . An air conditioning system with plural air diffusers (as shown in the example of ) may thus be configured to distribute air flow to substantially all the air diffusers , and to distribute the air flow substantially evenly between the plurality of air diffusers . Additionally or alternatively, the air flow through each air diffuser may be substantially controlled by the passive pressure controller rather than the air flow into the air diffuser upstream end and/or air flow distributed by the associated air conditioning system .
70
54
54
70
70
70
70
54
56
54
56
56
56
70
56
70
56
56
56
The passive pressure controller generally includes vanes that are mobile and/or elastically deformable. The vanes of the passive pressure controller respond to air pressure differentials across the passive pressure controller . The air pressure differential across the passive pressure controller may be due to the air flow through the passive pressure controller . As the vanes respond to air pressure differentials, the flow channels are opened and/or closed. Generally, the vanes are biased to maintain one or more of the flow channels in an open state in the absence of an air pressure differential greater than a predetermined threshold. As the air pressure differential increases (e.g., due to increased air flow velocity), one or more of the flow channels is at least partially closed. The momentum change of the air as it passes through the flow channels in the passive pressure controller may cause a pressure differential and provide the reactive force to at least partially close at least one flow channel . In the illustrative, non-exclusive example of a passive pressure controller with a plurality of flow channels , a fraction of the flow channels may close and/or an open area of one or more (and optionally all) of the flow channels may decrease in response to a sufficiently high pressure differential.
54
70
14
34
54
56
54
Vanes of the passive pressure controller may be (each independently) elastically deformable and/or elastically coupled to the interior of the air diffuser (e.g., to neck section interior ). The vanes may be configured to be displaced (e.g., elastically deform, rotate, etc.) in response to the pressure differentials described with respect to the opening and closing of flow channels . The vanes may be relatively thin and/or may have a thickness of less than 6 mm, less than 4 mm, less than 3 mm, less than 2 mm, less than 1 mm, greater than 0.5 mm, greater than 1 mm, greater than 2 mm, greater than 3 mm, greater than 4 mm, 1-6 mm, and/or 0.5-4 mm.
54
70
17
21
51
22
52
32
42
18
Pressure differentials that may affect the vanes and/or the passive pressure controller as described herein may be a pressure differential from the air diffuser upstream end , the inlet upstream end , and/or the flow controller upstream end to the inlet downstream end , the flow controller downstream end , the neck downstream end , the outlet downstream end , and/or the air diffuser downstream end . The pressure differential may be a pressure above a predetermined threshold, a pressure range, and/or a pressure differential of greater than 2 kPa, greater than 4 kPa, greater than 6 kPa, greater than 8 kPa, greater than 10 kPa, greater than 15 kPa, greater than 20 kPa, less than 20 kPa, less than 15 kPa, less than 10 kPa, less than 8 kPa, less than 6 kPa, less than 4 kPa, and/or 2-10 kPa.
50
72
72
11
72
20
72
72
78
72
11
11
72
72
52
50
30
72
72
30
72
40
18
Additionally or alternatively, the flow controller may include, and optionally may be, a vortex inducer . The vortex inducer , when present, is configured to induce some tangential air flow as air passes through the vortex inducer . That is, the generally axial flow that flows through the inlet section and to the vortex inducer is redirected, in the vortex inducer , to swirl around the central axis of the vortex inducer . The tangential flow component of the air flow may be a substantial fraction of the axial flow component of the air flow as the air flow exits the vortex inducer . For example, the ratio of tangential air flow to axial air flow is at least 0.2, at least 0.3, at least 0.4, at least 0.5, at least 0.8, at least 1, at least 1.2, at most 5, at most 3, at most 2, at most 1.5, 0.2-5, 0.3-3, 0.4-3, 0.5-3, 0.5-1.5, 0.8-3, and/or 0.8-1.5. The ratio of tangential air flow to axial air flow may be determined at the downstream end of the vortex inducer (i.e., the downstream end of the flow controller ) and/or in the neck section downstream of the vortex inducer . The ratio may be the velocity ratio or the mass flow ratio. The vortex inducer may be configured to create a vortex of air in the neck section and/or a vortex of air that extends from the vortex inducer into the outlet section and/or to, or beyond, the air diffuser downstream end .
72
78
78
72
28
38
72
14
14
20
30
40
72
19
14
79
72
Generally, the vortex inducer may be described with a central axis . The central axis of the vortex inducer may be continuous with the inlet central axis and/or the neck central axis . The vortex inducer may have characteristic transverse and/or lateral dimensions corresponding to the characteristic dimensions of the proximate interior of the air diffuser and/or related to the longitudinal dimension of at least one of the air diffuser , the inlet section , neck section , and outlet section . For example, a lateral width, a transverse breadth, a diameter, and/or an effective diameter of the vortex inducer may be less than 50%, less than 20%, less than 15%, less than 10%, less than 8%, less than 5%, less than 4%, less than 2%, greater than 1%, greater than 2%, greater than 4%, greater than 5%, greater than 8%, greater than 10%, greater than 15%, and/or greater than 20% of the air channel length of the air diffuser and/or the air channel length downstream of the vortex inducer .
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The vortex inducer may define and/or include one or more vanes that are configured to allow air to pass through the vortex inducer in a helical manner. The vanes of the vortex inducer may define one or more angled flow channels . The vanes and/or the angled flow channels may be curved and/or helical. The vanes and/or the angled flow channels may have a pitch, an average pitch, an effective pitch, and/or an angle, relative to the central axis of the vortex inducer , of about 10°, about 20°, about 30°, about 40°, about 45°, about 50°, about 60°, about 70°, about 80°, about 90°, 20°-70°, 30°-70°, 30°-60°, 40°-70°, and/or 40°-60°. The vanes of the vortex inducer may be connected together at a central point or component, e.g., a central hub . For example, the hub may connect to one, at least one, two, at least two, or all of the vanes . Alternatively, the vortex inducer may not include a hub . The hub , when present, generally occludes all, or substantially all, air flow through the hub , i.e., the hub generally has no flow channel . Where one or more vanes do not connect to a hub , the vanes may protrude from the interior of the air diffuser and into the air flow path. The angled flow channels defined by protruding vanes may merge with a central flow channel that generally follows the central axis . Protruding vanes may only partially occlude the interior of the air diffuser and/or may have a radial length that is less than half a characteristic lateral and/or transverse dimension (e.g., a lateral width, a transverse breadth, a diameter, and/or an effective diameter) of the vortex inducer . For example, the radial length of protruding vanes may be less than 50%, less than 20%, less than 15%, less than 10%, less than 8%, less than 5%, less than 4%, less than 2%, greater than 1%, greater than 2%, greater than 4%, greater than 5%, greater than 8%, greater than 10%, greater than 15%, and/or greater than 20% of a characteristic lateral and/or transverse dimension of the vortex inducer .
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The vanes of the vortex inducer and/or the angled flow channels may be arranged in a radial pattern (arranged like rays or radii) and/or a circumferential pattern (arranged like segments of a circumference). In such patterns, the individual vanes and/or angled flow channels may be described as angularly and/or radially spaced apart. Typically, such patterns are centered on and/or arranged around the central axis and/or the hub .
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FIGS. 6-7
FIG. 6
FIG. 6
FIG. 6
Illustrative, non-exclusive examples of flow controllers are shown in . For example, depicts a flow controller that is in the form of a fixed fan (a fan shape that does not rotate about its central axis). The fixed fan includes a plurality of vanes and a plurality of angled flow channels that are configured to impart circular motion (around the longitudinal axis) to the generally longitudinal air flow that enters the flow controller . Hence, the embodiment shown in is also a vortex inducer . The vanes may be elastically deformable and/or elastically coupled to the interior of the air diffuser and/or the central hub . The arrangement of vanes shown allows the vanes to elastically deform to close the angled flow channels in response to an increase in the pressure differential across the flow controller . Hence, the embodiment shown in also may be a passive pressure controller .
FIG. 7
FIG. 6
FIG. 7
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depicts a flow controller that is in the form of a helix. The helix is a single helical vane that defines an angled flow channel . As with , the flow controller of is a vortex inducer and may be a passive pressure controller (when the vane is elastically deformable and/or elastically coupled to the interior of the air diffuser and/or the central hub ). Other optional embodiments of flow controllers may include louvers and/or orifice plates. For example, a plate with angle orifices may be configured as a vortex inducer . As another example, louvers may redirect air entering and/or exiting a flow controller such that the flow controller imparts tangential air flow and is a vortex inducer .
FIGS. 3-5
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Returning to the broader discussion of , the air diffuser also may comprise an optional baffle , which is located generally in the interior of air diffuser , typically within the neck section , the outlet section , and/or the interface between the neck section and the outlet section . The baffle , when present, is located downstream of the flow controller , and hence is generally toward the air diffuser downstream end . The baffle may be proximate to the neck downstream end and the outlet upstream end . Further, the baffle may be configured to couple, and/or be operatively coupled, to the neck section and/or the outlet section .
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FIG. 5
Generally, the baffle is substantially perpendicular to or oblique to, the neck central axis and/or the outlet central axis . The relationship between the baffle and the neck central axis and/or the outlet central axis may be characterized by an angle , as best viewed in . The angle between the baffle and the neck central axis and/or between the baffle and the outlet central axis may be greater than 10°, greater than 15°, greater than 20°, greater than 25°, greater than 30°, greater than 35°, greater than 40°, greater than 45°, greater than 50°, greater than 55°, greater than 60°, greater than 65°, greater than 70°, greater than 75°, greater than 85°, less than 90°, less than 75°, less than 70°, less than 65°, less than 60°, less than 55°, less than 50°, less than 45°, less than 40°, less than 35°, less than 30°, less than 25°, less than 20°, less than 15°, 10°-50°, 15°-45°, 20°-45°, 25°-35°, about 90°, about 75°, about 60°, about 45°, about 30°, and/or about 15°.
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The baffle may be configured to create flow resistance and/or create backpressure within the air diffuser . The flow resistance is generally between the neck upstream end and the outlet downstream end . The backpressure is generally backpressure at the neck upstream end . Generally, the baffle may be configured to spread air flow across the lateral width of the outlet section at the outlet downstream end . One configuration, which may spread the air flow and maintain a quiet air flow, includes a tortuous air flow path from the neck upstream end to the outlet downstream end . Generally, the flow restriction of the baffle prevents direct transmission of upstream noise and redirects the air flow to interact with the interior of the neck section, the interior of the outlet section, the optional neck sound dampening material , and/or the optional outlet sound dampening material .
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The baffle may be a baffle plate characterized by a first end , a second end . The baffle plate may substantially span the lateral width of the interior of the neck section at the neck downstream end and/or the lateral width of the interior of the outlet section at the outlet upstream end . Additionally or alternatively, the baffle plate may substantially span the interior of the neck section and/or the outlet section across the lateral direction. The baffle plate may be substantially flat, may include flat regions, curved regions, and/or rounded regions.
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Generally, the baffle plate is configured to substantially restrict air flow near the first end and/or the second end . For example, the first end and/or the second end may be coupled close to one or more interior surfaces of the neck section and/or the outlet section , for example the transverse surface of the interior of the neck section and/or the transverse surface of the interior of the outlet section . Where the first end and/or the second end are near an interior surface of the air diffuser , the interior surface may include sound dampening material, e.g., neck sound dampening material and outlet sound dampening material , or may be essentially free of sound dampening material proximate the first end and/or the second end . Where the neck section includes neck sound dampening material , the neck sound dampening material may define a material gap near the first end and/or the second end , e.g., along a transverse surface of the interior of the neck section . Where the outlet section includes sound dampening material , the outlet sound dampening material may define a material gap near the first end and/or the second end , e.g., along a transverse surface of the interior of the outlet section .
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Generally, the baffle plate defines one or more gaps between the baffle plate and the interior of the neck section and/or the outlet section . The gap may substantially span the interior of the neck section and/or the outlet section across the lateral direction, in which case the gap would be between the baffle plate and a lateral surface of the interior of the neck section and/or a lateral surface of the interior of the outlet section . The gap may have a lateral width approximately the same as the lateral width at the neck downstream end and/or the lateral width at the outlet upstream end . The gap may have an open area that is less than 50%, less than 40%, less than 35%, less than 30%, less than 25%, less than 20%, less than 15%, less than 12%, less than 10%, less than 8%, greater than 5%, greater than 8%, greater than 10%, greater than 12%, greater than 15%, greater than 20%, greater than 25%, greater than 30%, greater than 35%, greater than 40%, 5-50%, 8-30%, 8-20%, 10-35%, about 8%, about 10%, about 12%, about 15%, about 20%, about 25%, about 30%, and/or about 33% of the open area of the outlet downstream end . The interior surface of the neck section and/or the outlet section near the gap may be substantially flat near the gap , may have a curvature away from the baffle plate , and/or may have a curvature toward the baffle plate .
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The baffle plate may have a third end near the gap and fourth end opposite the third end . The third end may be configured to smoothly split air flow and may be wedge-shaped, rounded and/or bulbous. The third end may be upstream or downstream of the fourth end . The fourth end is generally near the interior surface of the neck section and/or the outlet section , and may be operatively coupled to the neck section and/or the outlet section . For example, the fourth end may be near a lateral surface of the interior of the neck section and/or near a lateral surface of the interior of the outlet section . Further, the baffle plate , may define a dead volume, a volume where air may enter and exit essentially from one direction, between the fourth end and the interior surface of the neck section and/or the interior surface of the outlet section .
Further examples of aircraft, aircraft air conditioning systems, air diffusers, general design considerations, and use thereof are disclosed in U.S. patent application Ser. No. 14/010,775, filed Aug. 27, 2013, the entire disclosure of which is incorporated herein by reference for all purposes.
Illustrative, non-exclusive examples of inventive subject matter according to the present disclosure are described in the following enumerated paragraphs.
A1. An aircraft cabin air diffuser comprising:
an inlet section with an open interior;
a neck section with an open interior, downstream of the inlet section;
an outlet section with an open interior, wherein the outlet section is downstream of the neck section; and
a flow controller within the open interior of the neck section.
A1.1. The air diffuser of paragraph A1, wherein the inlet section has an interior profile that is substantially round and/or substantially oval.
A1.2. The air diffuser of any of paragraphs A1-A1.1, wherein the inlet section has an interior profile and the outlet section has an interior profile that is different, optionally substantially different, than the interior profile of the inlet section.
A1.3. The air diffuser of any of paragraphs A1-A1.1, wherein the outlet section has an interior profile that is substantially oblong and/or substantially rectangular.
A2. The air diffuser of any of paragraphs A1-A1.3, wherein the flow controller is configured to create an air pressure differential of greater than 2 kPa, greater than 4 kPa, greater than 6 kPa, greater than 8 kPa, greater than 10 kPa, greater than 15 kPa, greater than 20 kPa, less than 20 kPa, less than 15 kPa, less than 10 kPa, less than 8 kPa, less than 6 kPa, less than 4 kPa, and/or 2-10 kPa.
A2.1. The air diffuser of paragraph A2, wherein the air pressure differential is from the inlet section to the outlet section.
A2.2. The air diffuser of any of paragraphs A2-A2.1, wherein the air pressure differential is from an upstream end of the flow controller to a downstream end of the flow controller.
A3. The air diffuser of any of paragraphs A1-A2.2, wherein the flow controller is configured to restrict air flow from the inlet section to the outlet section.
A4. The air diffuser of any of paragraphs A1-A3, wherein the flow controller is proximate the inlet section.
A5. The air diffuser of any of paragraphs A1-A4, wherein the flow controller is operatively coupled to the inlet section and/or the neck section.
A6. The air diffuser of any of paragraphs A1-A5, wherein the flow controller includes, and optionally is, a passive pressure controller, optionally configured to affect air flow through the passive pressure controller in response to an air pressure differential across the passive pressure controller.
A6.1. The air diffuser of paragraph A6, wherein the passive pressure controller is configured to maintain a substantially constant air flow through the passive pressure controller when an air pressure in the inlet section is greater than a predefined threshold, optionally wherein the substantially constant air flow is greater than 700 g/min, greater than 800 g/min, greater than 900 g/min, greater than 1,000 g/min, greater than 1,100 g/min, greater than 1,200 g/min, less than 1,500 g/min, less than 1,200 g/min, 800-1,200 g/min, greater than 800 L/min, greater than 900 L/min, greater than 1,000 L/min, greater than 1,100 L/min, greater than 1,200 L/min, greater than 1,300 L/min, less than 1,500 L/min, less than 1,300 L/min, and/or 900-1,300 L/min, and optionally wherein the predefined threshold is greater than 60 kPa, greater than 70 kPa, greater than 75 kPa, greater than 80 kPa, greater than 90 kPa, greater than 100 kPa, less than 120 kPa, less than 100 kPa, 70-120 kPa, 70-102 kPa, 70-90 kPa, about 90 kPa, about 80 kPa, and/or about 75 kPa.
A6.2. The air diffuser of any of paragraphs A6-A6.1, wherein the passive pressure controller is configured to be actuated by air pressure in the inlet section and/or by air velocity through the passive pressure controller.
A6.3. The air diffuser of any of paragraphs A6-A6.2, wherein the passive pressure controller includes one or more vanes that define one or more flow channels.
A6.3.1. The air diffuser of paragraph A6.3, wherein the one or more vanes are configured to decrease an open area of the one or more flow channels in response to an increase in an air pressure differential from the inlet section to the outlet section.
A6.3.2. The air diffuser of any of paragraphs A6.3-A6.3.1, wherein the one or more vanes are biased to maintain the one or more flow channels in an open state in the absence of an air pressure differential between the inlet section and the outlet section.
A6.3.3. The air diffuser of any of paragraphs A6.3-A6.3.2, wherein at least one vane, optionally all vanes, is elastically coupled to the interior of the neck section.
A6.3.4. The air diffuser of any of paragraphs A6.3-A6.3.3, wherein at least one vane, optionally all vanes, is configured to elastically deform in response to an air pressure differential from the inlet section to the outlet section of greater than 2 kPa, greater than 4 kPa, greater than 6 kPa, greater than 8 kPa, greater than 10 kPa, greater than 15 kPa, greater than 20 kPa, less than 20 kPa, less than 15 kPa, less than 10 kPa, less than 8 kPa, less than 6 kPa, less than 4 kPa, and/or 2-10 kPa.
A6.3.5. The air diffuser of any of paragraphs A6.3-A6.3.4, wherein the passive pressure controller has an upstream end and a downstream end and wherein at least one vane, optionally all vanes, is configured to elastically deform in response to an air pressure differential, from the upstream end of the passive pressure controller to the downstream end of the passive pressure controller, of greater than 2 kPa, greater than 4 kPa, greater than 6 kPa, greater than 8 kPa, greater than 10 kPa, greater than 15 kPa, greater than 20 kPa, less than 20 kPa, less than 15 kPa, less than 10 kPa, less than 8 kPa, less than 6 kPa, less than 4 kPa, and/or 2-10 kPa.
A6.3.6. The air diffuser of any of paragraphs A6.3-A6.3.5, wherein a thickness of at least one vane, optionally all vanes, is less than 6 mm, less than 4 mm, less than 3 mm, less than 2 mm, less than 1 mm, greater than 0.5 mm, greater than 1 mm, greater than 2 mm, greater than 3 mm, greater than 4 mm, 1-6 mm, and/or 0.5-4 mm.
A6.3.7. The air diffuser of any of paragraphs A6.3-A6.3.6, wherein at least one vane, optionally all vanes, includes, optionally is, a blade, a membrane, a diaphragm, a flap, a leaf, a leaflet, a fin, a ridge, a nodule, a baffle, a louver, a disc, and/or a poppet.
A6.4. The air diffuser of any of paragraphs A6-A6.3.7, wherein the passive pressure controller includes, optionally is, a normally-open valve, a poppet valve, a butterfly valve, a diaphragm valve, and/or a pressure regulator.
A7. The air diffuser of any of paragraphs A1-A6.4, wherein the flow controller includes, and optionally is, a vortex inducer.
A7.1. The air diffuser of paragraph A7, wherein the vortex inducer is configured to induce tangential air flow as air passes through the vortex inducer, optionally wherein a ratio of tangential air flow to axial air flow is at least 0.2, at least 0.3, at least 0.4, at least 0.5, at least 0.8, at least 1, at least 1.2, at most 5, at most 3, at most 2, at most 1.5, 0.2-5, 0.3-3, 0.4-3, 0.5-3, 0.5-1.5, 0.8-3, and/or 0.8-1.5.
A7.2. The air diffuser of any of paragraphs A7-A7.1, wherein the vortex inducer is configured to create a vortex of air in the neck section, optionally a vortex of air that extends from the vortex inducer into the outlet section.
A7.3. The air diffuser of any of paragraphs A7-A7.2, wherein the vortex inducer has a characteristic dimension that is a lateral width, a transverse breadth, a diameter, and/or an effective diameter, wherein the air diffuser has an air channel length, optionally downstream of the vortex inducer, and wherein the ratio of the characteristic dimension to the air channel length is less than 50%, less than 20%, less than 15%, less than 10%, less than 8%, less than 5%, less than 4%, less than 2%, greater than 1%, greater than 2%, greater than 4%, greater than 5%, greater than 8%, greater than 10%, greater than 15%, and/or greater than 20%.
A7.4. The air diffuser of any of paragraphs A7-A7.3, wherein the vortex inducer includes a central axis, optionally wherein the central axis of the vortex inducer is continuous with an/the inlet central axis, and optionally wherein the central axis of the vortex inducer is continuous with a/the neck central axis.
A7.5. The air diffuser of any of paragraphs A7-A7.4, wherein the vortex inducer includes one or more, optionally a plurality of, vanes that define one or more, optionally a plurality of, angled flow channels.
A7.5.1. The air diffuser of paragraph A7.5, wherein the plurality of angled flow channels are arranged in a radial pattern and/or a circumferential pattern, optionally around a central axis of the vortex inducer and/or a hub of the vortex inducer.
A7.5.2. The air diffuser of any of paragraphs A7.5-A7.5.1, wherein the vortex inducer includes 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 2-12, 4-12, 6-10, at least 5, at least 8, and/or at least 12 vanes.
A7.5.3. The air diffuser of any of paragraphs A7.5-A7.5.2, wherein the one or more vanes define 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 2-12, 4-12, 6-10, at least 5, at least 8, and/or at least 12 angled flow channels.
A7.5.4. The air diffuser of any of paragraphs A7.5-A7.5.3, wherein the angled flow channels are angled about 10°, about 20°, about 30°, about 40°, about 45°, about 50°, about 60°, about 70°, about 80°, about 90°, 20°-70°, 30°-70°, 30°-60°, 40°-70°, and/or 40°-60° from a/the central axis of the vortex inducer.
A7.5.5. The air diffuser of any of paragraphs A7.5-A7.5.4, wherein the vanes and/or the angled flow channels are curved and/or helical.
A7.5.6. The air diffuser of any of paragraphs A7.5-A7.5.5, wherein at least two, optionally all, of the angled flow channels are radially and/or angularly spaced apart.
A7.5.7. The air diffuser of any of paragraphs A7.5-A7.5.6, wherein the vortex inducer includes a central hub, optionally that connects to at least one vane.
A7.5.7.1. The air diffuser of paragraph A7.5.7, wherein the central hub connects at least two, and optionally all of the, vanes together.
A7.5.8. The air diffuser of any of paragraphs A7.5-A7.5.7.1, wherein at least one vane, optionally all vanes, is coupled to the interior of the neck section.
A7.5.9. The air diffuser of any of paragraphs A7.5-A7.5.8, wherein at least one vane, optionally all vanes, includes, optionally is, a blade, a membrane, a diaphragm, a flap, a leaf, a leaflet, a fin, a ridge, a nodule, a baffle, a louver, a disc, and/or a poppet.
A7.6. The air diffuser of any of paragraphs A7-A7.5.9, wherein the vortex inducer includes, optionally is, a fixed fan, a helix, an orifice plate, and/or a louver.
A8. The air diffuser of any of paragraphs A1-A7.6, wherein the inlet section has an inlet upstream end and an inlet downstream end, optionally wherein the inlet section has an open area at the inlet upstream end that is smaller than an open area at the inlet downstream end.
A9. The air diffuser of any of paragraphs A1-A8, wherein the inlet section is a tube, a generally cylindrical shell, and/or a generally tapered shell.
A10. The air diffuser of any of paragraphs A1-A9, wherein the interior profile of the inlet section is an interior profile at an/the inlet upstream end and/or an interior profile at an/the inlet downstream end.
A11. The air diffuser of any of paragraphs A1-A10, wherein the inlet section is elongated between an/the inlet upstream end and an/the inlet downstream end.
A12. The air diffuser of any of paragraphs A1-A11, wherein the inlet section has an inlet central axis between an/the inlet upstream end and an/the inlet downstream end, optionally wherein the inlet central axis is substantially straight.
A13. The air diffuser of any of paragraphs A1-A12, wherein the interior of the inlet section defines an air flow path that is substantially straight and/or substantially diverging.
A14. The air diffuser of any of paragraphs A1-A13, wherein the inlet section includes a branching tube configured to create an air flow path directed away from an/the inlet downstream end.
A15. The air diffuser of any of paragraphs A1-A14, wherein the neck section has a neck upstream end and a neck downstream end, optionally wherein the neck section has a first region, proximate to the neck upstream end, that is a tube and/or a generally cylindrical shell.
A16. The air diffuser of any of paragraphs A1-A15, wherein the neck section has a second region, proximate to a/the neck downstream end, that is a tube and/or generally an open box.
A17. The air diffuser of any of paragraphs A1-A16, wherein the neck section has a transition region between a/the neck upstream end and a/the neck downstream end, wherein the transition region has a non-uniform interior profile, optionally wherein the interior of the transition region defines a smooth air flow path, has arcuate surfaces, has rounded corners, has no sharp corners, and/or is essentially free of sharp corners.
A18. The air diffuser of any of paragraphs A1-A17, wherein the neck section at the neck upstream end has an interior profile that is substantially round and/or substantially oval.
A19. The air diffuser of any of paragraphs A1-A18, wherein the neck section at a/the neck downstream end has an interior profile that is substantially round, substantially oval, substantially oblong, and/or substantially rectangular.
A20. The air diffuser of any of paragraphs A1-A19, wherein the neck section has a first interior profile at a/the neck upstream end and a second interior profile at a/the neck downstream end, wherein the first interior profile and the second interior profile are different.
A21. The air diffuser of any of paragraphs A1-A20, wherein the neck section is elongated between a/the neck upstream end and a/the neck downstream end.
A22. The air diffuser of any of paragraphs A1-A21, wherein the neck section has a neck central axis between a/the neck upstream end and a/the neck downstream end, optionally wherein the neck central axis is substantially straight or substantially curved, and optionally wherein the neck central axis is continuous with an/the inlet central axis.
A23. The air diffuser of any of paragraphs A1-A22, wherein the interior of the neck section defines a substantially straight air flow path.
A24. The air diffuser of any of paragraphs A1-A23, wherein the interior of the neck section defines a substantially curved air flow path.
A24.1. The air diffuser of paragraph A24, wherein a plane of principal curvature of the air flow path is substantially orthogonal to a lateral width of the interior of the neck section at a/the neck downstream end.
A25. The air diffuser of any of paragraphs A1-A24.1, wherein the neck section is configured to direct air entering a/the neck upstream end into a different direction upon exiting a/the neck downstream end.
A26. The air diffuser of any of paragraphs A1-A25, wherein the neck section includes a neck sound dampening material, optionally wherein the neck sound dampening material includes fire resistant materials and/or aramid fibers.
A26.1. The air diffuser of paragraph A26, wherein the neck sound dampening material is coupled to an interior surface of the neck section.
A26.2. The air diffuser of any of paragraphs A26-A26.1, wherein the neck sound dampening material is continuous within the neck section.
A26.3. The air diffuser of any of paragraphs A26-A26.2, wherein the neck sound dampening material covers most, a majority and/or substantially all, of the interior of the neck section.
A26.4. The air diffuser of any of paragraphs A26-A26.3, wherein the neck sound dampening material covers a fraction of the interior of the neck section, and wherein the fraction is greater than 20%, greater than 40% greater than 50%, greater than 60%, greater than 75%, greater than 90%, about 50%, about 75%, or about 100%.
A26.5. The air diffuser of any of paragraphs A26-A26.4, wherein the interior of the neck section at a/the neck downstream end has a lateral surface and a transverse surface, wherein the lateral surface is substantially covered by neck sound dampening material, and optionally wherein the transverse surface is substantially free of neck sound dampening material.
A27. The air diffuser of any of paragraphs A1-A26.5, wherein the neck section has an open area at a/the neck upstream end that is smaller than an open area at a/the neck downstream end.
A28. The air diffuser of any of paragraphs A1-A27, wherein the interior of the neck section at a/the neck downstream end has a lateral width that is larger than a characteristic dimension of the interior of the neck section at a/the neck upstream end, wherein the characteristic dimension is a lateral width, a transverse breadth, a diameter, and/or an effective diameter, and optionally wherein the ratio of the characteristic dimension to the lateral width is less than 50%, less than 40%, less than 30%, less than 25%, less than 20%, less than 15%, less than 12%, less than 10%, less than 8%, 8-50%, 8-25%, about 20%, about 15%, and/or about 12%.
A29. The air diffuser of any of paragraphs A1-A28, wherein the interior of the neck section at a/the neck downstream end has a transverse breadth that is about equal to or smaller than a characteristic dimension of the interior of the neck section at a/the neck upstream end, wherein the characteristic dimension is a lateral width, a transverse breadth, a diameter, and/or an effective diameter, optionally wherein the ratio of the transverse breadth to the characteristic dimension is less than 120%, less than 100%, less than 80%, less than 60%, less than 50%, less than 40%, less than 30%, less than 25%, less than 20%, 20-100%, 30-50%, about 100%, about 50%, about 33%, and/or about 25%.
A30. The air diffuser of any of paragraphs A1-A29, wherein the interior of the neck section at a/the neck downstream end has a lateral width and a transverse breadth, wherein the lateral width is larger than the transverse breadth, and optionally wherein the ratio of the transverse breadth to the lateral width is less than 50%, less than 40%, less than 30%, less than 25%, less than 20%, less than 15%, less than 12%, less than 10%, less than 8%, less than 7%, less than 6%, less than 5%, less than 4%, 4-40%, 5-25%, 10-25%, about 25%, about 20%, about 15%, and/or about 12%.
A31. The air diffuser of any of paragraphs A1-A30, wherein a characteristic dimension of the interior of the neck section at a/the neck upstream end is greater than 20 mm, greater than 30 mm, greater than 40 mm, greater than 50 mm, greater than 60 mm, greater than 80 mm, greater than 100 mm, less than 100 mm, less than 80 mm, less than 60 mm, less than 50 mm, 30-100 mm, and/or 40-60 mm, and wherein the characteristic dimension is a lateral width, a transverse breadth, a diameter, and/or an effective diameter.
A32. The air diffuser of any of paragraphs A1-A31, wherein a lateral width of the interior of the neck section at a/the neck downstream end is greater than 100 mm, greater than 200 mm, greater than 300 mm, greater than 400 mm, greater than 500 mm, less than 500 mm, less than 400 mm, less than 300 mm, less than 200 mm, 100-500 mm, 200-300 mm, and/or about 280 mm.
A33. The air diffuser of any of paragraphs A1-A32, wherein a lateral width of the interior of the neck section at a/the neck downstream end is substantially the same as or less than a length of a/the neck central axis.
A34. The air diffuser of any of paragraphs A1-A33, wherein the outlet section is a tube, generally an open box, and/or generally an open tapered box.
A35. The air diffuser of any of paragraphs A1-A34, wherein the outlet section includes an outlet downstream end, wherein the interior profile of the outlet section is an interior profile at the outlet downstream end.
A35.1. The air diffuser of paragraph A35, wherein the outlet section includes an outlet upstream end, wherein the outlet section has an interior profile at the outlet upstream end that is substantially round, substantially oval, substantially oblong, and/or substantially rectangular.
A36. The air diffuser of any of paragraphs A1-A35.1, wherein the outlet section is elongated between an/the outlet upstream end and an/the outlet downstream end.
A37. The air diffuser of any of paragraphs A1-A36, wherein the outlet section has an outlet central axis between an/the outlet upstream end and an/the outlet downstream end, optionally wherein the outlet central axis is substantially straight or substantially curved, and optionally wherein the outlet central axis is continuous with a/the neck central axis.
A38. The air diffuser of any of paragraphs A1-A37, wherein the interior of the outlet section defines an air flow path that is substantially straight and/or substantially converging.
A39. The air diffuser of any of paragraphs A1-A38, wherein the interior of the outlet section defines a substantially curved air flow path.
A39.1. The air diffuser of paragraph A39, wherein a plane of principal curvature of the air flow path is substantially orthogonal to a lateral width of the interior of the outlet section at an/the outlet upstream end.
A40. The air diffuser of any of paragraphs A1-A39.1, wherein the outlet section is configured to direct air entering an/the outlet upstream end into a different direction upon exiting an/the outlet downstream end.
A41. The air diffuser of any of paragraphs A1-A40, wherein the outlet section includes an outlet sound dampening material, optionally wherein the outlet sound dampening material includes fire resistant materials and/or aramid fibers.
A41.1. The air diffuser of paragraph A41, wherein the outlet sound dampening material is coupled to an interior surface of the outlet section.
A41.2. The air diffuser of any of paragraphs A41-A41.1, wherein the outlet sound dampening material is continuous within the outlet section.
A41.3. The air diffuser of any of paragraphs A41-A41.2, wherein the outlet sound dampening material covers most, a majority and/or substantially all, of the interior of the outlet section.
A41.4. The air diffuser of any of paragraphs A41-A41.3, wherein the outlet sound dampening material covers a fraction of the interior of the outlet section, and wherein the fraction is greater than 20%, greater than 40% greater than 50%, greater than 60%, greater than 75%, greater than 90%, about 50%, about 75%, or about 100%.
A41.5. The air diffuser of any of paragraphs A41-A41.4, wherein the interior of the outlet section at an/the outlet upstream end has a lateral surface and a transverse surface, wherein the lateral surface is substantially covered by outlet sound dampening material, and optionally wherein the transverse surface is substantially free of outlet sound dampening material.
A42. The air diffuser of any of paragraphs A1-A41.5, wherein the outlet section has an open area at an/the outlet upstream end that is larger than an open area at an/the outlet downstream end.
A43. The air diffuser of any of paragraphs A1-A42, wherein the interior of the outlet section at an/the outlet upstream end has a lateral width and a transverse breadth, wherein the lateral width is larger than the transverse breadth, and optionally wherein the ratio of the transverse breadth to the lateral width is less than 50%, less than 40%, less than 30%, less than 25%, less than 20%, less than 15%, less than 12%, less than 10%, less than 8%, less than 7%, less than 6%, less than 5%, less than 4%, 4-40%, 5-25%, 10-25%, about 25%, about 20%, about 15%, and/or about 12%.
A44. The air diffuser of any of paragraphs A1-A43, wherein a lateral width of the interior of the outlet section at an/the outlet upstream end is greater than 100 mm, greater than 200 mm, greater than 300 mm, greater than 400 mm, greater than 500 mm, less than 500 mm, less than 400 mm, less than 300 mm, less than 200 mm, 100-500 mm, 200-300 mm, and/or about 280 mm.
A45. The air diffuser of any of paragraphs A1-A44, wherein a transverse breadth of the interior of the outlet section at an/the outlet upstream end is greater than 10 mm, greater than 20 mm, greater than 30 mm, greater than 40 mm, greater than 50 mm, greater than 70 mm, greater than 100 mm, greater than 150 mm, less than 200 mm, less than 150 mm, less than 100 mm, less than 70 mm, less than 50 mm, less than 40 mm, less than 30 mm, less than 20 mm, 10-200 mm, 20-100 mm, 20-70 mm, about 20 mm, and/or about 50 mm.
A46. The air diffuser of any of paragraphs A1-A45, wherein the interior of the outlet section at an/the outlet downstream end has a lateral width and a transverse breadth, wherein the lateral width is larger than the transverse breadth, and optionally wherein the ratio of the transverse breadth to the lateral width is less than 50%, less than 40%, less than 30%, less than 25%, less than 20%, less than 15%, less than 12%, less than 10%, less than 8%, less than 7%, less than 6%, less than 5%, less than 4%, 4-40%, 5-25%, 10-25%, about 25%, about 20%, about 15%, and/or about 12%.
A47. The air diffuser of any of paragraphs A1-A46, wherein a lateral width of the interior of the outlet section at an/the outlet downstream end is greater than 100 mm, greater than 200 mm, greater than 300 mm, greater than 400 mm, greater than 500 mm, less than 500 mm, less than 400 mm, less than 300 mm, less than 200 mm, 100-500 mm, 200-300 mm, and/or about 280 mm.
A48. The air diffuser of any of paragraphs A1-A47, wherein a transverse breadth of the interior of the outlet section at an/the outlet downstream end is greater than 10 mm, greater than 20 mm, greater than 30 mm, greater than 40 mm, greater than 50 mm, greater than 70 mm, greater than 100 mm, greater than 150 mm, less than 200 mm, less than 150 mm, less than 100 mm, less than 70 mm, less than 50 mm, less than 40 mm, less than 30 mm, less than 20 mm, 10-200 mm, 20-100 mm, 20-70 mm, about 20 mm, and/or about 50 mm.
A49. The air diffuser of any of paragraphs A1-A48, wherein a lateral width of the interior of the outlet section at an/the outlet downstream end is greater than a length of a/the outlet central axis, optionally wherein the ratio of the length to the lateral width is less than 80%, less than 60%, less than 50%, less than 40%, less than 30%, less than 25%, less than 20%, 20-80%, 25-60%, about 60%, about 50%, and/or about 40%.
A50. The air diffuser of any of paragraphs A1-A49, further comprising an interior baffle that is downstream of the flow controller.
A50.1. The air diffuser of paragraph A50, wherein the interior baffle is configured to restrict air flow from a/the neck upstream end to an/the outlet downstream end.
A50.2. The air diffuser of any of paragraphs A50-A50.1, wherein the interior baffle is configured to create backpressure at a/the neck upstream end.
A50.3. The air diffuser of any of paragraphs A50-A50.2, wherein the interior baffle is configured to spread air flow across a lateral width of the interior of an/the outlet downstream end.
A50.4. The air diffuser of any of paragraphs A50-A50.3, wherein the interior baffle is configured to create a tortuous air flow path within the air diffuser.
A50.5. The air diffuser of any of paragraphs A50-A50.4, wherein the interior baffle is configured to prevent direct transmission of upstream noise.
A50.6. The air diffuser of any of paragraphs A50-A50.5, wherein the interior baffle is configured to redirect air flow to interact with the interior of the neck section, the interior of the outlet section, a/the neck sound dampening material, and/or a/the outlet sound dampening material.
A50.7. The air diffuser of any of paragraphs A50-A50.6, wherein the interior baffle is proximate to a/the neck downstream end and proximate to an/the outlet upstream end.
A50.8. The air diffuser of any of paragraphs A50-A50.7, wherein the interior baffle is operatively coupled to the neck section and/or the outlet section.
A50.9. The air diffuser of any of paragraphs A50-A50.8, wherein the interior baffle is substantially perpendicular to or oblique to, a/the neck central axis, optionally wherein an angle between the interior baffle and the neck central axis is greater than 10°, greater than 15°, greater than 20°, greater than 25°, greater than 30°, greater than 35°, greater than 40°, greater than 45°, greater than 50°, greater than 55°, greater than 60°, greater than 65°, greater than 70°, greater than 75°, greater than 85°, less than 90°, less than 75°, less than 70°, less than 65°, less than 60°, less than 55°, less than 50°, less than 45°, less than 40°, less than 35°, less than 30°, less than 25°, less than 20°, less than 15°, 10°-50°, 15°-45°, 20°-45°, 25°-35°, about 90°, about 75°, about 60°, about 45°, about 30°, and/or about 15°.
A50.10. The air diffuser of any of paragraphs A50-A50.9, wherein the interior baffle is substantially perpendicular to or oblique to, an/the outlet central axis, optionally wherein an angle between the interior baffle and the outlet central axis is greater than 10°, greater than 15°, greater than 20°, greater than 25°, greater than 30°, greater than 35°, greater than 40°, greater than 45°, greater than 50°, greater than 55°, greater than 60°, greater than 65°, greater than 70°, greater than 75°, greater than 85°, less than 90°, less than 75°, less than 70°, less than 65°, less than 60°, less than 55°, less than 50°, less than 45°, less than 40°, less than 35°, less than 30°, less than 25°, less than 20°, less than 15°, 10°-50°, 15°-45°, 20°-45°, 25°-35°, about 90°, about 75°, about 60°, about 45°, about 30°, and/or about 15°.
A50.11. The air diffuser of any of paragraphs A50-A50.10, wherein the interior baffle is a baffle plate with a first end and a second end.
A50.11.1. The air diffuser of paragraph A50.11, wherein the baffle plate is substantially flat.
A50.11.2. The air diffuser of any of paragraphs A50.11-A50.11.1, wherein the baffle plate substantially spans a lateral width of the interior of the neck section and/or a lateral width of the interior of the outlet section.
A50.11.3. The air diffuser of any of paragraphs A50.11-A50.11.2, wherein the baffle plate is configured to substantially restrict air flow near the first end and/or the second end.
A50.11.4. The air diffuser of any of paragraphs A50.11-A50.11.3, wherein, when the neck section includes neck sound dampening material, the neck sound dampening material defines a material gap near the first end of the baffle plate and/or near the second end of the baffle plate.
A50.11.5. The air diffuser of any of paragraphs A50.11-A50.11.4, wherein, when the outlet section includes outlet sound dampening material, the outlet sound dampening material defines a material gap near the first end of the baffle plate and/or near the second end of the baffle plate.
A50.11.6. The air diffuser of any of paragraphs A50.11-A50.11.5, wherein the baffle plate defines a gap, optionally one gap, in the interior of the neck section and/or the interior of the outlet section.
A50.11.6.1. The air diffuser of paragraph A50.11.6, wherein the gap substantially spans a lateral width of the interior of the neck section and/or a lateral width of the interior of the outlet section.
A50.11.6.2. The air diffuser of any of paragraphs A50.11.6-A50.11.6.1, wherein the gap has an open area that is less than 50%, less than 40%, less than 35%, less than 30%, less than 25%, less than 20%, less than 15%, less than 12%, less than 10%, less than 8%, greater than 5%, greater than 8%, greater than 10%, greater than 12%, greater than 15%, greater than 20%, greater than 25%, greater than 30%, greater than 35%, greater than 40%, 5-50%, 8-30%, 8-20%, 10-35%, about 8%, about 10%, about 12%, about 15%, about 20%, about 25%, about 30%, and/or about 33% of an open area of a/the outlet downstream end.
A50.11.6.3. The air diffuser of any of paragraphs A50.11.6-A50.11.6.2, wherein the gap is proximate to an interior surface of the neck section and/or an interior surface of the outlet section, optionally wherein the interior surface of the neck section and/or the interior surface of the outlet section is substantially flat near the gap, has a curvature away from the baffle plate, and/or has a curvature toward the baffle plate.
A50.11.6.4. The air diffuser of any of paragraphs A50.11.6-A50.11.6.3, wherein the baffle plate has a third end near the gap and a fourth end opposite the third end, wherein the third end is upstream or downstream of the fourth end.
A50.11.6.5. The air diffuser of any of paragraphs A50.11.6-A50.11.6.4, wherein the baffle plate has a third end near the gap that is configured to smoothly split air flow.
A50.11.6.6. The air diffuser of any of paragraphs A50.11.6-A50.11.6.5, wherein the baffle plate has a third end near the gap that is wedge-shaped, rounded and/or bulbous.
A51. The air diffuser of any of paragraphs A1-A50.11.6.6, wherein the air diffuser is configured to flow air at greater than 700 g/min, greater than 800 g/min, greater than 900 g/min, greater than 1,000 g/min, greater than 1,100 g/min, greater than 1,200 g/min, less than 1,500 g/min, less than 1,200 g/min, 800-1,200 g/min, greater than 800 L/min, greater than 900 L/min, greater than 1,000 L/min, greater than 1,100 L/min, greater than 1,200 L/min, greater than 1,300 L/min, less than 1,500 L/min, less than 1,300 L/min, and/or 900-1,300 L/min.
A52. The air diffuser of any of paragraphs A1-A51, wherein the air diffuser is configured to generate a sound level that is less than 20 dB, less than 10 dB, less than 5 dB, less than 3 dB, less than 2 dB, or less than 1 dB more than ambient aircraft cabin noise when air flows through the inlet section to the outlet section, and optionally wherein the sound level includes the sound level at frequencies of 0.1 kHz, 0.2 kHz, 0.5 Hz, 1 kHz, 2 kHz, 3 kHz, 4 kHz, 5 kHz, 8 kHz, 10 kHz, 12 kHz, 15 kHz, 20 kHz, 0.1-10 kHz, 0.5-4 kHz, 1-4 kHz, 2-4 kHz, 3-10 kHz, 5-10 kHz, greater than 5 kHz, and/or greater than 8 kHz.
A53. The air diffuser of any of paragraphs A1-A52, wherein the air diffuser is configured to generate a speech interference level of less than 55 dB, less than 52 dB, less than 50 dB, less than 48 dB, less than 46 dB, or less than 44 dB when air flows through the inlet section to the outlet section.
A54. An aircraft air conditioning system comprising:
the aircraft cabin air diffuser of any of paragraphs A1-A53;
wherein the aircraft air conditioning system is configured to supply air through the aircraft cabin air diffuser.
A55. An aircraft comprising a plurality of the aircraft cabin air diffusers of any of paragraphs A1-A53.
A55.1. The aircraft of paragraph A55, wherein the aircraft includes less than one aircraft cabin air diffuser for every two rated occupants, for every three rated occupants, and/or for every four rated occupants, and optionally wherein the aircraft includes less than 0.5, less than 0.4, less than 0.37, less than 0.33, less than 0.30, less than 0.28, less than 0.26, less than 0.24, less than 0.22, less than 0.2, about 0.4, about 0.37, about 0.33, about 0.3, about 0.25, and/or about 0.22 air diffusers per rated occupant.
A55.2. The aircraft of any of paragraphs A55-A55.1, wherein the aircraft is configured to maintain an aircraft cabin pressure of greater than 60 kPa, greater than 70 kPa, greater than 75 kPa, greater than 80 kPa, greater than 90 kPa, greater than 100 kPa, less than 120 kPa, less than 100 kPa, less than 80 kPa, 70-80 kPa, 70-90 kPa, 70-102 kPa, about 90 kPa, about 80 kPa, and/or about 75 kPa.
B1. A method of supplying air to an aircraft cabin, comprising: supplying air through the aircraft cabin air diffuser of any of paragraphs A1-A53.
B2. The method of paragraph B1, wherein the supplying includes supplying while the aircraft is in flight.
B3. The method of any of paragraphs B1-B2, wherein the supplying includes flowing air through the aircraft cabin air diffuser at greater than 700 g/min, greater than 800 g/min, greater than 900 g/min, greater than 1,000 g/min, greater than 1,100 g/min, greater than 1,200 g/min, less than 1,500 g/min, less than 1,200 g/min, 800-1,200 g/min, greater than 800 L/min, greater than 900 L/min, greater than 1,000 L/min, greater than 1,100 L/min, greater than 1,200 L/min, greater than 1,300 L/min, less than 1,500 L/min, less than 1,300 L/min, and/or 900-1,300 L/min.
B4. The method of any of paragraphs B1-B3, wherein the supplying includes supplying with a sound level less than 20 dB, less than 10 dB, less than 5 dB, less than 3 dB, less than 2 dB, or less than 1 dB more than ambient aircraft cabin noise, and optionally wherein the sound level includes frequencies of 0.1 kHz, 0.2 kHz, 0.5 kHz, 1 kHz, 2 kHz, 3 kHz, 4 kHz, 5 kHz, 8 kHz, 10 kHz, 12 kHz, 15 kHz, 20 kHz, 0.1-10 kHz, 0.5-4 kHz, 1-4 kHz, 2-4 kHz, 3-10 kHz, 5-10 kHz, greater than 5 kHz, and/or greater than 8 kHz.
B5. The method of any of paragraphs B1-B4, wherein the supplying includes supplying with a speech interference level less than 55 dB, less than 52 dB, less than 50 dB, less than 48 dB, less than 46 dB, or less than 44 dB.
B6. The method of any of paragraphs B1-B5, wherein the aircraft cabin includes occupants, and wherein the supplying includes using less than one aircraft cabin air diffuser for every two occupants, for every three occupants, and/or for every four occupants, and optionally wherein the aircraft includes less than 0.5, less than 0.4, less than 0.37, less than 0.33, less than 0.30, less than 0.28, less than 0.26, less than 0.24, less than 0.22, less than 0.2, about 0.4, about 0.37, about 0.33, about 0.3, about 0.25, and/or about 0.22 air diffusers per rated occupant.
B7. The method of any of paragraphs B1-B6, further comprising:
maintaining a pressure in the aircraft cabin of greater than about 60 kPa, greater than 70 kPa, greater than 75 kPa, greater than 80 kPa, greater than 90 kPa, greater than 100 kPa, less than 120 kPa, less than 100 kPa, less than 80 kPa, 70-80 kPa, 70-90 kPa, 70-102 kPa, about 90 kPa, about 80 kPa, and/or about 75 kPa.
As used herein, the terms “adapted” and “configured” mean that the element, component, or other subject matter is designed and/or intended to perform a given function. Thus, the use of the terms “adapted” and “configured” should not be construed to mean that a given element, component, or other subject matter is simply “capable of” performing a given function but that the element, component, and/or other subject matter is specifically selected, created, implemented, utilized, programmed, and/or designed for the purpose of performing the function. It is also within the scope of the present disclosure that elements, components, and/or other recited subject matter that is recited as being adapted to perform a particular function may additionally or alternatively be described as being configured to perform that function, and vice versa. Similarly, subject matter that is recited as being configured to perform a particular function may additionally or alternatively be described as being operative to perform that function. Further, as used herein, the singular forms “a”, “an” and “the” may be intended to include the plural forms as well, unless the context clearly indicates otherwise.
The various disclosed elements of apparatuses and steps of methods disclosed herein are not required of all apparatuses and methods according to the present disclosure, and the present disclosure includes all novel and non-obvious combinations and subcombinations of the various elements and steps disclosed herein. Moreover, one or more of the various elements and steps disclosed herein may define independent inventive subject matter that is separate and apart from the whole of a disclosed apparatus or method. Accordingly, such inventive subject matter is not required to be associated with the specific apparatuses and methods that are expressly disclosed herein, and such inventive subject matter may find utility in apparatuses and/or methods that are not expressly disclosed herein.
In the event that any patents or patent applications are incorporated by reference herein and (1) define a term in a manner and/or (2) are otherwise inconsistent with either the non-incorporated portion of the present disclosure or with any of the other incorporated references, the non-incorporated portion of the present disclosure shall control, and the term or incorporated disclosure therein shall only control with respect to the reference in which the term is defined and/or the incorporated disclosure was originally present.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1
is a cross-sectional schematic representation of an aircraft interior.
FIG. 2
is a non-exclusive, illustrative example of air diffusers as installed in an aircraft interior.
FIG. 3
is a schematic representation of an air diffuser.
FIG. 4
is a longitudinal cross-sectional view, perpendicular to the transverse axis, of an illustrative, non-exclusive example of an air diffuser.
FIG. 5
is a longitudinal cross-sectional view, perpendicular to the lateral axis, of an illustrative, non-exclusive example of an air diffuser.
FIG. 6
is detail of an illustrative, non-exclusive example of a flow controller.
FIG. 7
is detail of another illustrative, non-exclusive example of a flow controller. | |
Dear readers,
In this column, I’m answering more children’s questions about climate change. As in my previous column on the topic, these questions were posed by young participants in online educational programs at the Museum of Life and Science in Durham, North Carolina.
What can I do to help the climate? (Eve, no age given)
There’s a lot that you can do to help the climate. Kids all over the world are working together on the problem.
I suggest that you start by talking about climate change with a grown-up you trust, like a family member or a teacher. You can ask questions, share your feelings, and talk about ways that you might be able to help.
One of the most important things you can do is to learn more about climate change. You can start by looking at NASA’s climate website for kids. Or you might enjoy some of the books on this list.
Another important step is to tell other people what you learn about the climate. In my previous column, I shared suggestions from Professor Ann Sanson about how to talk about climate change with friends at school.
Kids around the world are also taking action to help the climate, for example by planting trees. Trees help the climate because they soak up carbon dioxide, which is trapping extra heat in the atmosphere. Children are writing songs and drawing pictures about the climate. And many young people are writing letters to leaders in the government, making speeches, or participating in school strikes, all with the goal of letting the grown-ups know that it’s time to protect the climate.
Should we expect more hurricanes in the future here? (Collin, no age given)
Dear Collin,
I sent your question to Dr. Jeff Masters, who works with me at Yale Climate Connections. Dr. Masters is a meteorologist, which means he uses science to explain and predict the weather. He replied, “Hurricane scientists currently don’t see a future with more hurricanes. But they do expect the strongest hurricanes to get stronger.”
That means when a hurricane does hit, it may cause more damage than it would have in the past. So it is important for people to help each other before, during, and after a storm.
The good news is that meteorologists are getting very good at spotting hurricanes. Scientists at the National Oceanic and Atmospheric Administration, or NOAA, use satellites orbiting the Earth to see potential hurricanes several days before they hit land. That makes it easier to tell people when they need to get ready for a storm, which can help them stay safe.
Will there be more lightning here when the climate changes? (Xi, age 6)
Scientists aren’t sure yet.
“There is some research showing that we should expect more lightning as the climate warms, but more work is needed before we can be confident of this,” Dr. Masters told me. In other words, grown-up scientists are still looking for an answer to your question.
No matter what happens in the future, you can follow these steps to stay safe from lightning.
- If you hear thunder, go inside a building or a car.
- Stay away from windows, doors, and porches. If you’re in a car, close the windows.
- Unplug any electrical devices you’re using, such as a computer.
- Don’t use faucets in the sink or bathtub during a thunderstorm. This is an excellent excuse not to take a bath.
Why do different parts of the world have different climates? Are they all changing? (Carlyle, age 9)
Dear Carlyle,
One important reason that the world has many different climates is that the sun’s rays shine more directly on some parts of the Earth than on others. Along the Equator, the sun shines almost straight overhead, focusing its rays over a small area. That focused energy keeps that part of the world warm. So countries along the equator, like Ecuador, Brazil, Gabon, Kenya, Somalia, the Maldives, and Indonesia, all have warm climates.
At the North and South Poles, on the other hand, the sun’s rays hit the Earth at more of a slant. The sun’s energy is spread out over a larger area, making it less intense. As a result, the climates in those places are extremely cold.
If you have a flashlight, you can see this phenomenon for yourself. Turn on the flashlight in a darkened room and hold it straight up and down as you point it at the floor. You will see a circle of light on the floor. Next, tilt the flashlight slightly. You will see that the area of light spreads out, growing in size on the floor.
Most places on Earth are getting warmer as the planet’s climate changes. But some regions are getting warmer more quickly than others. For example, the climate in the Arctic, which is the area near the North Pole where polar bears live, is warming much more quickly than the climate in North Carolina.
What can we learn from how the climate changed before? (no name given)
We can learn quite a bit. The study of the Earth’s ancient climates is called paleoclimatology. Scientists who study paleoclimatology look for clues hidden in rocks, tree rings, glaciers, ice caps, coral skeletons, and the layers of dirt at the bottom of lakes and oceans. Those clues can help them understand what the Earth’s climate was like before thermometers were invented — and even before humans existed.
By studying those clues, scientists have learned that the Earth’s climate has changed many times. In the past, our planet has experienced ice ages, when the Earth was much colder than today and icy glaciers crept toward the equator. It has also been warmer than it is today. In fact, about 55-56 million years ago, our planet was so hot that palm trees and crocodiles lived in the Arctic.
As scientists study ancient climates, they learn more about the natural causes of climate change, such as eruptions from volcanoes or changes in the amount of sunlight that reaches the Earth. Figuring out why the climate changed in the past helps scientists better understand why the climate is changing now. It also helps them to be confident that this time, humans are the cause.
I bet you would enjoy this article: “What’s the hottest Earth’s ever been?“
Thanks again for all of your questions. I enjoyed reading them.
– Sara
Got a question about climate change? Send it to [email protected]. Questions may be edited for length and clarity.
Tom Toro is a cartoonist and writer who has published over 200 cartoons in The New Yorker since 2010.
Explore the “Ask Sara” archive. | https://yaleclimateconnections.org/2020/08/kids-questions-about-climate-change-part-2/ |
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UNIVERSAL HEALTH SERVICES, INC. v. UNITED STATES ET AL. EX REL. ESCOBAR ET AL.
Yarushka Rivera, a teenage beneficiary of Massachusetts' Medicaid program, received counseling services for several years at Arbour Counseling Services, a satellite mental health facility owned and operated by a subsidiary of petitioner Universal Health Services, Inc. She had an adverse reaction to a medication that a purported doctor at Arbour prescribed after diagnosing her with bipolar disorder. Her condition worsened, and she eventually died of a seizure. Respondents, her mother and stepfather, later discovered that few Arbour employees were actually licensed to provide mental health counseling or authorized to prescribe medications or offer counseling services without supervision.
Respondents filed a qui tam suit, alleging that Universal Health had violated the False Claims Act (FCA). That Act imposes significant penalties on anyone who "knowingly presents . . . a false or fraudulent claim for payment or approval" to the Federal Government, 31 U. S. C. §3729(a)(1)(A). Respondents sought to hold Universal Health liable under what is commonly referred to as an "implied false certification theory of liability," which treats a payment request as a claimant's implied certification of compliance with relevant statutes, regulations, or contract requirements that are material conditions of payment and treats a failure to disclose a violation as a misrepresentation that renders the claim "false or fraudulent." Specifically, respondents alleged, Universal Health (acting through Arbour) defrauded the Medicaid program by submitting reimbursement claims that made representations about the specific services provided by specific types of professionals, but that failed to disclose serious violations of Massachusetts Medicaid regulations pertaining to staff qualifications and licensing requirements for these services. Universal Health thus allegedly defrauded the program because Universal Health knowingly misrepresented its compliance with mental health facility requirements that are so central to the provision of mental health counseling that the Medicaid program would have refused to pay these claims had it known of these violations.
The District Court granted Universal Health's motion to dismiss. It held that respondents had failed to state a claim under the "implied false certification" theory of liability because none of the regulations violated by Arbour was a condition of payment. The First Circuit reversed in relevant part, holding that every submission of a claim implicitly represents compliance with relevant regulations, and that any undisclosed violation of a precondition of payment (whether or not expressly identified as such) renders a claim "false or fraudulent." The First Circuit further held that the regulations themselves provided conclusive evidence that compliance was a material condition of payment because the regulations expressly required facilities to adequately supervise staff as a condition of payment.
1. The implied false certification theory can be a basis for FCA liability when a defendant submitting a claim makes specific representations about the goods or services provided, but fails to disclose noncompliance with material statutory, regulatory, or contractual requirements that make those representations misleading with respect to those goods or services. Pp. 8-11.
(a) The FCA does not define a "false" or "fraudulent" claim, so the Court turns to the principle that "absent other indication, 'Congress intends to incorporate the well-settled meaning of the common-law terms it uses,' " Sekhar v. United States, 570 U. S. ___, ___. Under the common-law definition of "fraud," the parties agree, certain misrepresentations by omission can give rise to FCA liability. Respondents and the Government contend that every claim for payment implicitly represents that the claimant is legally entitled to payment, and that failing to disclose violations of material legal requirements renders the claim misleading. Universal Health, on the other hand, argues that submitting a claim involves no representations and that the nondisclosure of legal violations is not actionable absent a special duty of reasonable care to disclose such matters. Today's decision holds that the claims at issue may be actionable because they do more than merely demand payment; they fall squarely within the rule that representations that state the truth only so far as it goes, while omitting critical qualifying information, can be actionable misrepresentations. Pp. 8-10.
(b) By submitting claims for payment using payment codes corresponding to specific counseling services, Universal Health represented that it had provided specific types of treatment. And Arbour staff allegedly made further representations by using National Provider Identification numbers corresponding to specific job titles. By conveying this information without disclosing Arbour's many violations of basic staff and licensing requirements for mental health facilities, Universal Health's claims constituted misrepresentations. Pp. 10-11.
2. Contrary to Universal Health's contentions, FCA liability for failing to disclose violations of legal requirements does not turn upon whether those requirements were expressly designated as conditions of payment. Pp. 11-17.
(a) Section 3729(a)(1)(A), which imposes liability on those presenting "false or fraudulent claim[s]," does not limit claims to misrepresentations about express conditions of payment. Nothing in the text supports such a restriction. And under the Act's materiality requirement, statutory, regulatory, and contractual requirements are not automatically material, even if they are labeled conditions of payment. Nor is the restriction supported by the Act's scienter requirement. A defendant can have "actual knowledge" that a condition is material even if the Government does not expressly call it a condition of payment. What matters is not the label that the Government attaches to a requirement, but whether the defendant knowingly violated a requirement that the defendant knows is material to the Government's payment decision. Universal Health's policy arguments are unavailing, and are amply addressed through strict enforcement of the FCA's stringent materiality and scienter provisions. Pp. 12-14.
(b) A misrepresentation about compliance with a statutory, regulatory, or contractual requirement must be material to the Government's payment decision in order to be actionable under the FCA. The FCA's materiality requirement is demanding. An undisclosed fact is material if, for instance, "[n]o one can say with reason that the plaintiff would have signed this contract if informed of the likelihood" of the undisclosed fact. Junius Constr. Co. v. Cohen, 257 N. Y. 393, 400, 178 N. E. 672, 674. When evaluating the FCA's materiality requirement, the Government's decision to expressly identify a provision as a condition of payment is relevant, but not automatically dispositive. A misrepresentation cannot be deemed material merely because the Government designates compliance with a particular requirement as a condition of payment. Nor is the Government's option to decline to pay if it knew of the defendant's noncompliance sufficient for a finding of materiality. Materiality also cannot be found where noncompliance is minor or insubstantial. Moreover, if the Government pays a particular claim in full despite its actual knowledge that certain requirements were violated, that is very strong evidence that those requirements are not material. The FCA thus does not support the Government's and First Circuit's expansive view that any statutory, regulatory, or contractual violation is material so long as the defendant knows that the Government would be entitled to refuse payment were it aware of the violation. Pp. 14-17.
780 F. 3d 504, vacated and remanded.
UNIVERSAL HEALTH SERVICES, INC., PETITIONER v.
The False Claims Act, 31 U. S. C. §3729 et seq., imposes significant penalties on those who defraud the Government. This case concerns a theory of False Claims Act liability commonly referred to as "implied false certification." According to this theory, when a defendant submits a claim, it impliedly certifies compliance with all conditions of payment. But if that claim fails to disclose the defendant's violation of a material statutory, regulatory, or contractual requirement, so the theory goes, the defendant has made a misrepresentation that renders the claim "false or fraudulent" under §3729(a)(1)(A). This case requires us to consider this theory of liability and to clarify some of the circumstances in which the False Claims Act imposes liability.
We first hold that, at least in certain circumstances, the implied false certification theory can be a basis for liability. Specifically, liability can attach when the defendant submits a claim for payment that makes specific representations about the goods or services provided, but knowingly fails to disclose the defendant's noncompliance with a statutory, regulatory, or contractual requirement. In these circumstances, liability may attach if the omission renders those representations misleading.
We further hold that False Claims Act liability for failing to disclose violations of legal requirements does not turn upon whether those requirements were expressly designated as conditions of payment. Defendants can be liable for violating requirements even if they were not expressly designated as conditions of payment. Conversely, even when a requirement is expressly designated a condition of payment, not every violation of such a requirement gives rise to liability. What matters is not the label the Government attaches to a requirement, but whether the defendant knowingly violated a requirement that the defendant knows is material to the Government's payment decision.
A misrepresentation about compliance with a statutory, regulatory, or contractual requirement must be material to the Government's payment decision in order to be actionable under the False Claims Act. We clarify below how that rigorous materiality requirement should be enforced.
Because the courts below interpreted §3729(a)(1)(A) differently, we vacate the judgment and remand so that those courts may apply the approach set out in this opinion.
Enacted in 1863, the False Claims Act "was originally aimed principally at stopping the massive frauds perpetrated by large contractors during the Civil War." United States v. Bornstein, 423 U. S. 303, 309 (1976). "[A] series of sensational congressional investigations" prompted hearings where witnesses "painted a sordid picture of how the United States had been billed for nonexistent or worthless goods, charged exorbitant prices for goods delivered, and generally robbed in purchasing the necessities of war." United States v. McNinch, 356 U. S. 595, 599 (1958). Congress responded by imposing civil and criminal liability for 10 types of fraud on the Government, subjecting violators to double damages, forfeiture, and up to five years' imprisonment. Act of Mar. 2, 1863, ch. 67, 12 Stat. 696.
Since then, Congress has repeatedly amended the Act, but its focus remains on those who present or directly induce the submission of false or fraudulent claims. See 31 U. S. C. §3729(a) (imposing civil liability on "any person who . . . knowingly presents, or causes to be presented, a false or fraudulent claim for payment or approval"). A "claim" now includes direct requests to the Government for payment as well as reimbursement requests made to the recipients of federal funds under federal benefits programs. See §3729(b)(2)(A). The Act's scienter requirement defines "knowing" and "knowingly" to mean that a person has "actual knowledge of the information," "acts in deliberate ignorance of the truth or falsity of the information," or "acts in reckless disregard of the truth or falsity of the information." §3729(b)(1)(A). And the Act defines "material" to mean "having a natural tendency to influence, or be capable of influencing, the payment or receipt of money or property." §3729(b)(4).
Congress also has increased the Act's civil penalties so that liability is "essentially punitive in nature." Vermont Agency of Natural Resources v. United States ex rel. Stevens, 529 U. S. 765, 784 (2000). Defendants are subjected to treble damages plus civil penalties of up to $10,000 per false claim. §3729(a); 28 CFR §85.3(a)(9) (2015) (adjusting penalties for inflation).
The alleged False Claims Act violations here arose within the Medicaid program, a joint state-federal program in which healthcare providers serve poor or disabled patients and submit claims for government reimbursement. See generally 42 U. S. C. §1396 et seq. The facts recited in the complaint, which we take as true at this stage, are as follows. For five years, Yarushka Rivera, a teenage beneficiary of Massachusetts' Medicaid program, received counseling services at Arbour Counseling Services, a satellite mental health facility in Lawrence, Massachusetts, owned and operated by a subsidiary of petitioner Universal Health Services. Beginning in 2004, when Yarushka started having behavioral problems, five medical professionals at Arbour intermittently treated her. In May 2009, Yarushka had an adverse reaction to a medication that a purported doctor at Arbour prescribed after diagnosing her with bipolar disorder. Her condition worsened; she suffered a seizure that required hospitalization. In October 2009, she suffered another seizure and died. She was 17 years old.
Thereafter, an Arbour counselor revealed to respondents Carmen Correa and Julio Escobar--Yarushka's mother and stepfather--that few Arbour employees were actually licensed to provide mental health counseling and that supervision of them was minimal. Respondents discovered that, of the five professionals who had treated Yarushka, only one was properly licensed. The practitioner who diagnosed Yarushka as bipolar identified herself as a psychologist with a Ph. D., but failed to mention that her degree came from an unaccredited Internet college and that Massachusetts had rejected her application to be licensed as a psychologist. Likewise, the practitioner who prescribed medicine to Yarushka, and who was held out as a psychiatrist, was in fact a nurse who lacked authority to prescribe medications absent supervision. Rather than ensuring supervision of unlicensed staff, the clinic's director helped to misrepresent the staff's qualifications. And the problem went beyond those who treated Yarushka. Some 23 Arbour employees lacked licenses to provide mental health services, yet--despite regulatory requirements to the contrary--they counseled patients and prescribed drugs without supervision.
When submitting reimbursement claims, Arbour used payment codes corresponding to different services that its staff provided to Yaruskha, such as "Individual Therapy" and "family therapy." 1 App. 19, 20. Staff members also misrepresented their qualifications and licensing status to the Federal Government to obtain individual National Provider Identification numbers, which are submitted in connection with Medicaid reimbursement claims and correspond to specific job titles. For instance, one Arbour staff member who treated Yaruskha registered for a number associated with " 'Social Worker, Clinical,' " despite lacking the credentials and licensing required for social workers engaged in mental health counseling. 1 id., at 32.
After researching Arbour's operations, respondents filed complaints with various Massachusetts agencies. Massachusetts investigated and ultimately issued a report detailing Arbour's violation of over a dozen Massachusetts Medicaid regulations governing the qualifications and supervision required for staff at mental health facilities. Arbour agreed to a remedial plan, and two Arbour employees also entered into consent agreements with Massachusetts.
In 2011, respondents filed a qui tam suit in federal court, see 31 U. S. C. §3730, alleging that Universal Health had violated the False Claims Act under an implied false certification theory of liability. The operative complaint asserts that Universal Health (acting through Arbour) submitted reimbursement claims that made representations about the specific services provided by specific types of professionals, but that failed to disclose serious violations of regulations pertaining to staff qualifications and licensing requirements for these services.1 Specifically, the Massachusetts Medicaid program requires satellite facilities to have specific types of clinicians on staff, delineates licensing requirements for particular positions (like psychiatrists, social workers, and nurses), and details supervision requirements for other staff. See 130 Code Mass. Regs. §§429.422-424, 429.439 (2014). Universal Health allegedly flouted these regulations because Arbour employed unqualified, unlicensed, and unsupervised staff. The Massachusetts Medicaid program, unaware of these deficiencies, paid the claims. Universal Health thus allegedly defrauded the program, which would not have reimbursed the claims had it known that it was billed for mental health services that were performed by unlicensed and unsupervised staff. The United States declined to intervene.
The District Court granted Universal Health's motion to dismiss the complaint. Circuit precedent had previously embraced the implied false certification theory of liability. See, e.g., United States ex rel. Hutcheson v. Blackstone Medical, Inc., 647 F. 3d 377, 385-387 (CA1 2011). But the District Court held that respondents had failed to state a claim under that theory because, with one exception not relevant here, none of the regulations that Arbour violated was a condition of payment. See 2014 WL 1271757, *1, *6-*12 (D Mass., Mar. 26, 2014).
The United States Court of Appeals for the First Circuit reversed in relevant part and remanded. 780 F. 3d 504, 517 (2015). The court observed that each time a billing party submits a claim, it "implicitly communicate[s] that it conformed to the relevant program requirements, such that it was entitled to payment." Id., at 514, n. 14. To determine whether a claim is "false or fraudulent" based on such implicit communications, the court explained, it "asks simply whether the defendant, in submitting a claim for reimbursement, knowingly misrepresented compliance with a material precondition of payment." Id., at 512. In the court's view, a statutory, regulatory, or contractual requirement can be a condition of payment either by expressly identifying itself as such or by implication. Id., at 512-513. The court then held that Universal Health had violated Massachusetts Medicaid regulations that "clearly impose conditions of payment." Id., at 513. The court further held that the regulations themselves "constitute[d] dispositive evidence of materiality," because they identified adequate supervision as an "express and absolute" condition of payment and "repeated[ly] reference[d]" supervision. Id., at 514 (internal quotation marks omitted).
We granted certiorari to resolve the disagreement among the Courts of Appeals over the validity and scope of the implied false certification theory of liability. 577 U. S. ___ (2015). The Seventh Circuit has rejected this theory, reasoning that only express (or affirmative) falsehoods can render a claim "false or fraudulent" under 31 U. S. C. §3729(a)(1)(A). United States v. Sanford-Brown, Ltd., 788 F. 3d 696, 711-712 (2015). Other courts have accepted the theory, but limit its application to cases where defendants fail to disclose violations of expressly designated conditions of payment. E.g., Mikes v. Straus, 274 F. 3d 687, 700 (CA2 2011). Yet others hold that conditions of payment need not be expressly designated as such to be a basis for False Claims Act liability. E.g., United States v. Science Applications Int'l Corp., 626 F. 3d 1257, 1269 (CADC 2010) (SAIC).
We first hold that the implied false certification theory can, at least in some circumstances, provide a basis for liability. By punishing defendants who submit "false or fraudulent claims," the False Claims Act encompasses claims that make fraudulent misrepresentations, which include certain misleading omissions. When, as here, a defendant makes representations in submitting a claim but omits its violations of statutory, regulatory, or contractual requirements, those omissions can be a basis for liability if they render the defendant's representations misleading with respect to the goods or services provided.
Because common-law fraud has long encompassed certain misrepresentations by omission, "false or fraudulent claims" include more than just claims containing express falsehoods. The parties and the Government agree that misrepresentations by omission can give rise to liability. Brief for Petitioner 30-31; Brief for Respondents 22-31; Brief for United States as Amicus Curiae 16-20.
The parties instead dispute whether submitting a claim without disclosing violations of statutory, regulatory, or contractual requirements constitutes such an actionable misrepresentation. Respondents and the Government invoke the common-law rule that, while nondisclosure alone ordinarily is not actionable, "[a] representation stating the truth so far as it goes but which the maker knows or believes to be materially misleading because of his failure to state additional or qualifying matter" is actionable. Restatement (Second) of Torts §529, p. 62 (1976). They contend that every submission of a claim for payment implicitly represents that the claimant is legally entitled to payment, and that failing to disclose violations of material legal requirements renders the claim misleading. Universal Health, on the other hand, argues that submitting a claim involves no representations, and that a different common-law rule thus governs: nondisclosure of legal violations is not actionable absent a special " 'duty . . . to exercise reasonable care to disclose the matter in question,' " which it says is lacking in Government contracting. Brief for Petitioner 31 (quoting Restatement (Second) of Torts §551(1), at 119).
We need not resolve whether all claims for payment implicitly represent that the billing party is legally entitled to payment. The claims in this case do more than merely demand payment. They fall squarely within the rule that half-truths--representations that state the truth only so far as it goes, while omitting critical qualifying information--can be actionable misrepresentations.3 A classic example of an actionable half-truth in contract law is the seller who reveals that there may be two new roads near a property he is selling, but fails to disclose that a third potential road might bisect the property. See Junius Constr. Co. v. Cohen, 257 N. Y. 393, 400, 178 N. E. 672, 674 (1931) (Cardozo, J.). "The enumeration of two streets, described as unopened but projected, was a tacit representation that the land to be conveyed was subject to no others, and certainly subject to no others materially affecting the value of the purchase." Ibid. Likewise, an applicant for an adjunct position at a local college makes an actionable misrepresentation when his resume lists prior jobs and then retirement, but fails to disclose that his "retirement" was a prison stint for perpetrating a $12 million bank fraud. See 3 D. Dobbs, P. Hayden, & H. Bublick, Law of Torts §682, pp. 702-703, and n. 14 (2d ed. 2011) (citing Sarvis v. Vermont State Colleges, 172 Vt. 76, 78, 80-82, 772 A. 2d 494, 496, 497-499 (2001)).
So too here, by submitting claims for payment using payment codes that corresponded to specific counseling services, Universal Health represented that it had provided individual therapy, family therapy, preventive medication counseling, and other types of treatment. Moreover, Arbour staff members allegedly made further representations in submitting Medicaid reimbursement claims by using National Provider Identification numbers corresponding to specific job titles. And these representations were clearly misleading in context. Anyone informed that a social worker at a Massachusetts mental health clinic provided a teenage patient with individual counseling services would probably--but wrongly--conclude that the clinic had complied with core Massachusetts Medicaid requirements (1) that a counselor "treating children [is] required to have specialized training and experience in children's services," 130 Code Mass. Regs. §429.422, and also (2) that, at a minimum, the social worker possesses the prescribed qualifications for the job, §429.424(C). By using payment and other codes that conveyed this information without disclosing Arbour's many violations of basic staff and licensing requirements for mental health facilities, Universal Health's claims constituted misrepresentations.
The second question presented is whether, as Universal Health urges, a defendant should face False Claims Act liability only if it fails to disclose the violation of a contractual, statutory, or regulatory provision that the Government expressly designated a condition of payment. We conclude that the Act does not impose this limit on liability. But we also conclude that not every undisclosed violation of an express condition of payment automatically triggers liability. Whether a provision is labeled a condition of payment is relevant to but not dispositive of the materiality inquiry.
Nothing in the text of the False Claims Act supports Universal Health's proposed restriction. Section 3729(a)(1)(A) imposes liability on those who present "false or fraudulent claims" but does not limit such claims to misrepresentations about express conditions of payment. See SAIC, 626 F. 3d, at 1268 (rejecting any textual basis for an express-designation rule). Nor does the common-law meaning of fraud tether liability to violating an express condition of payment. A statement that misleadingly omits critical facts is a misrepresentation irrespective of whether the other party has expressly signaled the importance of the qualifying information. Supra, at 9-11.
The False Claims Act's materiality requirement also does not support Universal Health. Under the Act, the misrepresentation must be material to the other party's course of action. But, as discussed below, see infra, at 15-17, statutory, regulatory, and contractual requirements are not automatically material, even if they are labeled conditions of payment. Cf. Matrixx Initiatives, Inc. v. Siracusano, 563 U. S. 27, 39 (2011) (materiality cannot rest on "a single fact or occurrence as always determinative" (internal quotation marks omitted)).
Nor does the Act's scienter requirement, §3729(b)(1)(A), support Universal Health's position. A defendant can have "actual knowledge" that a condition is material without the Government expressly calling it a condition of payment. If the Government failed to specify that guns it orders must actually shoot, but the defendant knows that the Government routinely rescinds contracts if the guns do not shoot, the defendant has "actual knowledge." Likewise, because a reasonable person would realize the imperative of a functioning firearm, a defendant's failure to appreciate the materiality of that condition would amount to "deliberate ignorance" or "reckless disregard" of the "truth or falsity of the information" even if the Government did not spell this out.
Universal Health nonetheless contends that False Claims Act liability should be limited to undisclosed violations of expressly designated conditions of payment to provide defendants with fair notice and to cabin liability. But policy arguments cannot supersede the clear statutory text. Kloeckner v. Solis, 568 U. S. ___, ___-___, n. 4 (2012) (slip op., at 13-14, n. 4). In any event, Universal Health's approach risks undercutting these policy goals. The Government might respond by designating every legal requirement an express condition of payment. But billing parties are often subject to thousands of complex statutory and regulatory provisions. Facing False Claims Act liability for violating any of them would hardly help would-be defendants anticipate and prioritize compliance obligations. And forcing the Government to expressly designate a provision as a condition of payment would create further arbitrariness. Under Universal Health's view, misrepresenting compliance with a requirement that the Government expressly identified as a condition of payment could expose a defendant to liability. Yet, under this theory, misrepresenting compliance with a condition of eligibility to even participate in a federal program when submitting a claim would not.
Moreover, other parts of the False Claims Act allay Universal Health's concerns. "[I]nstead of adopting a circumscribed view of what it means for a claim to be false or fraudulent," concerns about fair notice and open-ended liability "can be effectively addressed through strict enforcement of the Act's materiality and scienter requirements." SAIC, supra, at 1270. Those requirements are rigorous.
As noted, a misrepresentation about compliance with a statutory, regulatory, or contractual requirement must be material to the Government's payment decision in order to be actionable under the False Claims Act. We now clarify how that materiality requirement should be enforced.
Section 3729(b)(4) defines materiality using language that we have employed to define materiality in other federal fraud statutes: "[T]he term 'material' means having a natural tendency to influence, or be capable of influencing, the payment or receipt of money or property." See Neder, 527 U. S., at 16 (using this definition to interpret the mail, bank, and wire fraud statutes); Kungys v. United States, 485 U. S. 759, 770 (1988) (same for fraudulent statements to immigration officials). This materiality requirement descends from "common-law antecedents." Id., at 769. Indeed, "the common law could not have conceived of 'fraud' without proof of materiality." Neder, supra, at 22; see also Brief for United States as Amicus Curiae 30 (describing common-law principles and arguing that materiality under the False Claims Act should involve a "similar approach").
The materiality standard is demanding. The False Claims Act is not "an all-purpose antifraud statute," Allison Engine, 553 U. S., at 672, or a vehicle for punishing garden-variety breaches of contract or regulatory violations. A misrepresentation cannot be deemed material merely because the Government designates compliance with a particular statutory, regulatory, or contractual requirement as a condition of payment. Nor is it sufficient for a finding of materiality that the Government would have the option to decline to pay if it knew of the defendant's noncompliance. Materiality, in addition, cannot be found where noncompliance is minor or insubstantial. See United States ex rel. Marcus v. Hess, 317 U. S. 537, 543 (1943) (contractors' misrepresentation that they satisfied a non-collusive bidding requirement for federal program contracts violated the False Claims Act because "[t]he government's money would never have been placed in the joint fund for payment to respondents had its agents known the bids were collusive"); see also Junius Constr., 257 N. Y., at 400, 178 N. E., at 674 (an undisclosed fact was material because "[n]o one can say with reason that the plaintiff would have signed this contract if informed of the likelihood" of the undisclosed fact).
These rules lead us to disagree with the Government's and First Circuit's view of materiality: that any statutory, regulatory, or contractual violation is material so long as the defendant knows that the Government would be entitled to refuse payment were it aware of the violation. See Brief for United States as Amicus Curiae 30; Tr. of Oral Arg. 43 (Government's "test" for materiality "is whether the person knew that the government could lawfully withhold payment"); 780 F. 3d, at 514; see also Tr. of Oral Arg. 26, 29 (statements by respondents' counsel endorsing this view). At oral argument, the United States explained the implications of its position: If the Government contracts for health services and adds a requirement that contractors buy American-made staplers, anyone who submits a claim for those services but fails to disclose its use of foreign staplers violates the False Claims Act. To the Government, liability would attach if the defendant's use of foreign staplers would entitle the Government not to pay the claim in whole or part--irrespective of whether the Government routinely pays claims despite knowing that foreign staplers were used. Id., at 39-45. Likewise, if the Government required contractors to aver their compliance with the entire U. S. Code and Code of Federal Regulations, then under this view, failing to mention noncompliance with any of those requirements would always be material. The False Claims Act does not adopt such an extraordinarily expansive view of liability.
Because both opinions below assessed respondents' complaint based on interpretations of §3729(a)(1)(A) that differ from ours, we vacate the First Circuit's judgment and remand the case for reconsideration of whether respondents have sufficiently pleaded a False Claims Act violation. See Omnicare, Inc. v. Laborers Dist. Council Constr. Industry Pension Fund, 575 U. S. ___, ___ (2015) (slip op., at 19). We emphasize, however, that the False Claims Act is not a means of imposing treble damages and other penalties for insignificant regulatory or contractual violations. This case centers on allegations of fraud, not medical malpractice. Respondents have alleged that Universal Health misrepresented its compliance with mental health facility requirements that are so central to the provision of mental health counseling that the Medicaid program would not have paid these claims had it known of these violations. Respondents may well have adequately pleaded a violation of §3729(a)(1)(A). But we leave it to the courts below to resolve this in the first instance.
Although Universal Health submitted some of the claims at issue before 2009, we assume--as the parties have done--that the 2009 amendments to the False Claims Act apply here. Universal Health does not argue, and we thus do not consider, whether pre-2009 conduct should be treated differently.
The False Claims Act abrogates the common law in certain respects. For instance, the Act's scienter requirement "require[s] no proof of specific intent to defraud." 31 U. S. C. §3729(b)(1)(B). But we presume that Congress retained all other elements of common-law fraud that are consistent with the statutory text because there are no textual indicia to the contrary. See Neder, 527 U. S., at 24-25.
This rule recurs throughout the common law. In tort law, for example, "if the defendant does speak, he must disclose enough to prevent his words from being misleading." W. Keeton, D. Dobbs, R. Keeton, & D. Owen, Prosser and Keeton on Law of Torts §106, p. 738 (5th ed. 1984). Contract law also embraces this principle. See, e.g., Restatement (Second) of Contracts §161, Comment a, p. 432 (1979). And we have used this definition in other statutory contexts. See, e.g., Matrixx Initiatives, Inc. v. Siracusano, 563 U. S. 27, 44 (2011) (securities law).
As an alternative argument, Universal Health asserts that misleading partial disclosures constitute fraudulent misrepresentations only when the initial statement partially disclosed unfavorable information. Not so. "[A] statement that contains only favorable matters and omits all reference to unfavorable matters is as much a false representation as if all the facts stated were untrue." Restatement (Second) of Torts, §529, Comment a, pp. 62-63 (1976).
Accord, Williston §69:12, pp. 549-550 ("most popular" understanding is "that a misrepresentation is material if it concerns a matter to which a reasonable person would attach importance in determining his or her choice of action with respect to the transaction involved: which will induce action by a complaining party[,] knowledge of which would have induced the recipient to act differently" (footnote omitted)); id., at 550 (noting rule that "a misrepresentation is material if, had it not been made, the party complaining of fraud would not have taken the action alleged to have been induced by the misrepresentation"); Junius Constr. Co. v. Cohen, 257 N. Y. 393, 400, 178 N. E. 672, 674 (1931) (a misrepresentation is material if it "went to the very essence of the bargain"); cf. Neder v. United States, 527 U. S. 1, 16, 22, n. 5 (1999) (relying on " 'natural tendency to influence' " standard and citing Restatement (Second) of Torts §538 definition of materiality).
We reject Universal Health's assertion that materiality is too fact intensive for courts to dismiss False Claims Act cases on a motion to dismiss or at summary judgment. The standard for materiality that we have outlined is a familiar and rigorous one. And False Claims Act plaintiffs must also plead their claims with plausibility and particularity under Federal Rules of Civil Procedure 8 and 9(b) by, for instance, pleading facts to support allegations of materiality. | https://caselaw.findlaw.com/us-supreme-court/15-7.html |
The SAGE Handbook of Conflict Communication: Integrating Theory, Research, and Practice is the first resource to synthesize key theories, research, and practices of conflict communication in a variety of contexts. Editors John Oetzel and Stella Ting-Toomey, as well as expert researchers in the field, emphasize constructive conflict management from a communication perspective which places primacy in the message as the focus of conflict research and practice.
Chapter 24: International/Intercultural Conflict Resolution Training
International/Intercultural Conflict Resolution Training
For over a combined 40 years, we have been engaged in international/intercultural negotiation and conflict resolution training, delivering beginner to advanced programs in conflict resolution, collaborative negotiation skills, and mediation. Our core program has been collaborative negotiation skills. As practitioners, we have been fortunate to work with tens of thousands of people from different parts of the globe. Our varied assignments have been with large diplomatic organizations, inner-city schools, lawyers, doctors, activists, managers, and teachers. From all of those experiences, our understanding of conflict resolution and our training focus has evolved and sharpened.
Our intent here is to offer some of our insights about the cultural component of conflict and negotiation, especially within the context of training. The chapter ...
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Every January offers the chance for new beginnings, but this year we seem to crave that change more than ever. Most of us are anticipating a bright 2021, filled with the hope that the normal rhythms of our lives are on the near horizon. It does indeed appear that we’re just months away from returning to our offices and visiting, face to face, with our friends and family.
Still, the flip side of that reality is one more push to stay at home and stay safe and healthy. January 2021 is the perfect time to reinvigorate, learn new skills, revamp our home office, or plan for the future. As you might guess, listening to an audiobook is a great way to help us reach those goals and ease our minds over the next few months.
The following audiobooks focus on different aspects of our lives, from boosting our creativity to securing our retirement. Whichever title calls to you, it’s sure to help you have the best year ever. So let’s get listening!
Are your days starting to run together, each one looking like the last? If so, you might want to queue up AWESTRUCK. In this audiobook, clinical psychologist Jonah Paquette teaches us how to recognize and appreciate the small moments of wonder and awe in our daily lives. Starting with the science, Paquette explains how taking time to find awesomeness elevates our mood, lowers our stress, and even makes us more productive. He then provides 60 guided “practices,” or ways to connect with wonder, most of which require minimal resources (such as journaling and listening to music). Paquette’s techniques are made all the more accessible by narrator Nan McNamara’s lively performance.
Even after months of pandemic living, are you still struggling with how to efficiently and comfortably work from home? Time management expert Laura Vanderkam, in THE NEW CORNER OFFICE, provides lots of tips for both temporary and permanent home offices. Vanderkam’s practical advice will help you set up a more comfortable working space, change the way you block out your work time, and maintain connections with colleagues. She even addresses how to leave your office at the end of the day, even when that office is really the dining room table. Vankerkam, though not a professional voice actor, narrates her audiobook with clarity and expression.
Most of us set New Year’s goals and resolutions that focus on health and fitness. If you’re a woman of a certain age, let Paula Mee and Kate O’Brien’s YOUR MIDDLE YEARS be your guide to healthier future. Written by a nutritionist and a lifestyle journalist, this audiobook focuses on how to prepare for and live through menopause, detailing ways to protect our bones, boost our metabolism, keep our muscle strength, and stabilize our moods. Their attitude is that aging should not be feared; with the right tools, women can enter their postmenopausal years strong and fit. Narrator Helen Lloyd takes a conversational approach, which fits the authors’ style.
Before emerging back into society and the workplace later this year, you might want to think about brushing up on your listening skills. THE LISTENING PATH by Julia Cameron, the well-known creativity guru, presents a six-week program for enhancing our ability to be more mindful. Cameron’s down-to-earth techniques, combining daily rituals with seeking new experiences, encourage us to listen not just to others but also to the world around us and to ourselves. The pay-off? Enhanced creativity, new knowledge, and stronger connections. Narrator Eliza Foss’s conversational tone keeps us engaged.
For many of us, one of the tough lessons from last year was need to pay closer attention to financial planning. If you’re closer to the end of your career than you are to its beginning, this is the perfect time to listen to THE ULTIMATE RETIREMENT GUIDE FOR 50+, written and performed by Suze Orman. No matter where you are on the savings spectrum, Orman helps you get on the path to a secure future, with advice on how to save, how to navigate IRAs, what to expect in terms of Medicare and Social Security, and how to help your children and parents without going broke yourself. Last year was financially difficult for many of us, but Orman’s solid, reliable advice will help us manage a reset. Orman, no stranger to the mic, reads her book with passion. | https://audiofilemagazine.com/articles/5-audiobooks-for-new-beginnings/ |
I have a long list of things I want to sew. I wish it didn’t take so long to make stuff! There’s not enough time in the world to make everything I want to make, so I have to narrow it down.
I usually buy fabric once a month. I buy it all online because there are no fabric shops by me. There is a Joann about 40 minutes away, but I don’t always find what I’m looking for there, and for some reason a 40 minute car ride can feel very long with my boys in tow so I don’t go there very often.
After I get my fabric, I usually plan out about 3-4 projects at a time so that I can make sure my fabrics are washed and I have the buttons, zippers, etc. that I need. I think it’s so fun to plan ahead like that! Jon calls it my sewing queue.
This week, first in my queue was a pair of pants for Ezra.
I finished these early in the week but it took forever to take pictures of them. We tried a couple of times but Ezra pouted and wanted to be done before we even started. Today, I wised up and asked him to bring one of his Lego creations out for the photo shoot. That lit his face right up and he kept asking me to take pictures of the Legos, ha.
I used the Oliver + S Field Trip Cargo pants pattern for these, like I have so many times before. I’m really digging the more fitted jeans look right now on my boys, but Ezra won’t have it. He likes his pants to be pretty roomy.
I used some black twill I had left over from the last pair of pants I made for Jon. I tried to make them a little less boring by using a smidge of red thread on the back pockets and the knee darts. It would have been better if I’d had heavier thread for the red, but I only had regular thread.
Next up in my queue is a pair of jeans I’ve been working on for Seth for a few days. He decided he wants them to have a zipper instead of an elastic waist this time, and I’m feeling like it’s hard to get his waistband fitted right. I think it’s so much harder to fit someone else (other than myself) because I can’t feel what it feels like on the other person.
Plus Seth has a little belly and he likes his pants to sit under his belly in the front and I feel like having them sit that low in the front drags them down in the back. I added some to the back rise but I’m not sure if there are some other tricks I’m missing to accommodate for having pants fit under a belly.
If anybody out there knows some tricks for that, I’d love to hear!
I’ll end with one last picture of Ezra. It shows his utter elation at having a photo shoot with his Legos. | http://www.sweetshopsewing.com/2015/03/13/my-sewing-queue-and-some-field-trip-cargos/?replytocom=2672 |
A national paediatric diabetes audit has shown that north Cumbria’s hospitals are performing above the national average in several key areas set by the Royal College of Paediatrics and Child Health, on behalf of the NHS.
Diabetes is a condition where the amount of glucose in the blood is too high because the body cannot use it properly. Maintaining good blood glucose control is not easy for adults, let alone children and young people. On a day to day basis there is the challenge of keeping the blood glucose in target, avoiding low glucose and high glucose levels.
High blood glucose levels over time may cause complications associated with diabetes including damage to small and large blood vessels and nerves. However, with good diabetes care and blood glucose control, the risks of complications are markedly reduced, enabling children and young people with diabetes to live a healthy and full life.
The National Paediatric Diabetes Audit was established to compare the care and outcomes of all children and young people with diabetes receiving care from paediatric diabetes units in England and Wales. The results of the audit indicate a higher proportion of children and young people in north Cumbria are achieving better overall control and also meeting national targets for good control than in many parts of England and Wales.
The figures, published last week, cover the health checks and outcomes for children and young people with diabetes who have attended paediatric diabetes units from 1 April 2017 to 31 March 2018. The report aims to address a series of questions relating to paediatric diabetes care, including: What proportion of children and young people with diabetes are reported to be receiving key age-specific processes of diabetes care, as recommended by National Institution for Health and Care Excellence (NICE) , and how many achieve outcomes within specified treatment targets.
The NICE guidelines specify seven key care processes that should be offered to all young people attending children’s diabetes clinics. These include checks of thyroid function, blood pressure, height, weight and body mass index, urine albumin levels, diabetes eye screening, foot examinations and a measure of blood glucose control – Haemoglobin A1c (HbA1c – a measure of glucose control). At West Cumberland Hospital in Whitehaven, 93.1% received these measurements while at the Cumberland Infirmary in Carlisle the figure was 99.2%. This compares to an overall average of 86.3% in England and Wales. The north Cumbria teams also performed well offering almost all children and young people with diabetes direct dietitian and psychology support.
Paul Whitehead, consultant paediatrician at North Cumbria University Hospitals NHS Trust said: “These are fantastic figures and are a testament to the hard work of the young people with diabetes and their families and the teams across the county providing care, advice and support. All Children’s Diabetes teams across our NHS have worked in collaboration and followed the NHS’s best practice models to ensure the best outcomes for children and young people with diabetes in the country.
“We’ve been introducing new technology to ensure it’s easier for children and young people to measure their blood sugar levels, some even using a mobile phone app, and more modern insulin pumps which give young people the independence they need to manage their condition. | https://www.northcumbriahealthandcare.nhs.uk/north-cumbrias-childrens-diabetes-service-performs-above-national-average/ |
Do you believe in ghosts?
There is no scientific proof that ghosts exist. But every culture in the world has stories about ghosts and haunted houses. The oldest known record of a ghost appears in an ancient tale known as The Epic of Gilgamesh, which is dated from around 2200 BC!
People believe that ghosts usually live in old and big houses and appear at night. They wear white clothes and don’t say anything. Ghosts can walk through walls. When a ghost enters a room, the room usually gets cold. Some people say that ghosts can read our thoughts.
A special kind of ghost is called a poltergeist. Poltergeist is a German word which means ‘a noisy ghost.’ They make lots of noise, move objects and sometimes throw them.
Some people believe that ghosts are people who are trapped between the living world and the world of the dead.
When the same ghost is seen repeatedly in the same house, it is said that the house is haunted. Witnesses often say that the ghost looks like a person who is sleepwalking.
There are haunted houses all over the world. Glamis Castle has a deserved reputation as the most haunted castle in Scotland. In 1372, Robert II, the first Stuart King of Scots, gave Glamis to Sir John Lyon of Forteviot, as a reward for his services to the crown. In 1376, Sir John married the King’s daughter, Princess Joanna, and since then the Castle has been visited and lived in by many members of the Scottish and British royal families. Glamis castle was also used by William Shakespeare as a setting for the play Macbeth, the spookiest play in history. The play tells the story of Macbeth who became king by murdering the lawful king and his family.
The Tower of London, where so many famous people were killed, is said to have 30 ghosts! Visitors have seen Queen Anne Boleyn, for example, the second wife of King Henry VIII. The ghost of his fifth wife, Catherine Howard, runs through the rooms of Hampton Court.
50 Berkeley Square has a long held reputation as being the “Most Haunted House in London.” According to legend the most terrifying ghost lives here. There are rumors that a few people died when they saw the ghost. Some people see a young girl, others a little boy, and some claim to have seen the ghost of a man.
Sukharev Tower in Moscow. In times of Perth I James Bruce, alchemist and astrologer, spent there all nights long. Legend says he kept there Black Book, which was written by the Prince of Darkness himself. The building was destroyed by the Soviet authorities in 1934.
According to legend, Black Nun (they say it is the ghost of Sarah Whitehead) wanders through the Bank of England trying to find her brother.
The fortress, called Arkaim, is located right near Chelyabinsk, Russia. It is also called ‘Russian Stonehenge’. Arkaim became deserted about 4 000 years ago. Residents leaving their houses set fire to the city. Our contemporaries, who visited Arkaim, claim to have seen ghosts there.
Poveglia is a small island located between Venice and Lido. There is a bell tower of the XII century on the island. In the times of the Roman Empire people infected with plague were brought to this island to die. In the XVI century, the same thing happened again. Sick people were pushed into deep pits and left there. Eyewitnesses claim that they heard the cries of the dying.
Lady in White is the most famous ghost in the world. According to legend, this woman was forcibly married to an evil and cruel old man. The old man began to apologize for his actions before his death, but the woman didn’t want to forgive him. The man cursed his wife. Perchta of Rozmberk is Lady in White. Her husband was a well-known aristocrat Jan Liechtenstein. There is a portrait of the Lady. And at the bottom of the portrait there is an inscription in an unknown language.
Rosamund’s Tower is the oldest part of Woodstock Castle. In the XII century Rosamund Clifford was mistress of Henry II. According to legend, he hid her in a tower, which was surrounded by a maze, and only the king himself could get there. But once the jealous queen wife tracked him and penetrated into the tower. She suggested her husband’s mistress choice – death by dagger or poison. Rosamund preferred poison. And until now, the beautiful ghost is waiting for her king.
Some people say that they’ve seen animal ghosts – cats, dogs, horses and even birds. One of the most famous animal ghosts is a black cat that often appears near the Revolution Museum in Moscow.
There are even ghost hunters. They visit old buildings and cemeteries to look for ghosts.
Do you believe in ghosts?
Many people think that Albert Einstein offered a scientific basis for the reality of ghosts.
Thomas Alva Edison first developed the cylinder recorder in an effort to communicate with the dead.
Spiritualists and psychical researchers have hoped to be able to capture evidence of ghosts on film and thereby offer proof of the survival of the human spirit.
And what about you? Do you believe in ghosts?
There are a lot of films and TV series about ghosts.
Some films about ghosts:
– The Innocents (1961). This adaptation of Henry James’s The Turn of the Screw (1898) is a psychological masterpiece, dealing with ghosts that may or may not be truly there.
– The Haunting (1963). This film has become a classic with horror film buffs and serious psychical researchers.
– The Shining (1980). The film was adapted from Stephen King’s 1977 novel.
– Ghost Story (1981). The film is based on Peter Straub’s novel.
– Poltergeist (1982). Steven Spielberg stated that in Poltergeist he, as screenwriter, sought to walk the thin line between the scientific and the spiritual.
– Ghost Busters (1984). It is an American supernatural comedy film directed and produced by Ivan Reitman and written by Dan Aykroyd and Harold Ramis.
– Ghost (1990). This film also offers a touching love story.
– The Sixth Sense (1999). M. Night Shyamalan won the Academy Award for Best Original Screenplay and was nominated as Best Director for this film. The film has a twist ending that brought many audiences back for a second viewing.
– The Others (2001) with Nicole Kidman as Grace Stewart, mother of two children.
And many many many others.
The following places are said to be haunted by Hollywood greats:
• Ever since the late 1920s, the spirit form of the Great Lover, Rudolph Valentino (1895-1926), has been seen in and around his former home, Falcon’s Lair, on Bella Drive.
• The former house of Joan Crawford (1904¬1977) on Bristol Avenue has an eerie history of mysterious fires that kept breaking out on the wall where the headboard of her bed once rested.
• Clifton Webb (1891-1966), who in life was a militant nonsmoker with a distaste for cats, is said to make life difficult for cigarette smokers and cat fanciers in his former home on Rex- ford Drive.
• Guests at the Roosevelt Hotel on 7000 Hollywood Boulevard have reported encounters with the ghosts of Marilyn Monroe and Montgomery Clift (1920-1966).
• Mae West (1892-1980) loved to host seances in her old home in the Ravenswood Apartments on Rossmore Avenue.
• The “Man of Steel,” George Reeves (1914-1959), who starred in the series Superman (1950-57), is claimed to have been seen in the home on Benedict Canyon Drive where his body was found. | https://wanderlord.com/do-you-believe-in-ghosts/ |
Dissociation as a mediator of child abuse across generations.
To test the hypothesis that dissociative process is the mechanism that accounts for the transmission of maltreatment across generations, a group of mothers who were abused and maltreated their children were compared to a group of mothers who broke the cycle of abuse. Mothers who were abused and are abusing their children were rated higher on idealization, inconsistency, and escapism in their description of their childhood and they scored higher on the Dissociative Experience Scale compared to mothers who broke the cycle. Mothers who were abused and abused their children recalled the care they received as children in a fragmented and disconnected fashion whereas those who broke the cycle integrated their abusive experience into a more coherent view of self. Even after partialing out the effects of IQ, large differences were found indicating that dissociative process plays a part in the transmission of maltreatment across generations. Possible reasons why some maltreated individuals coped with the trauma by dissociating and others integrate the experience were discussed.
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Which country is the largest producer of carbon dioxide this statistic shows the countries with the highest carbon dioxide (co2) emissions in 2016, based on their share of global energy-related. An introduction to the country, its history, politics, people and culture insights into the country’s values, customs and etiquette tips on preparing to work with new colleagues from india. Canada is the second largest country in the world in land area, after russia it has the longest border with water ( coastline ) of any country in the world it is next to the pacific , arctic , and atlantic oceans. Canada - français china is the second largest economy and is increasingly playing an important and influential role in development and in the global economy china has been the largest single contributor to world growth since the global financial crisis of 2008 china is ifc’s second largest portfolio country since its first. The igbo are the second largest group of people living in southern nigeria they are socially and culturally diverse, consisting of many subgroups.
Regional and country-level projections in addition to making projections at the global level, this report projects religious change in 198 countries and territories with at least 100,000 people as of 2010, covering 999% of the world’s population. Religion as ultimate concern is the meaning-giving substance of culture, and culture is the totality of forms in which the basic concern of religion expresses itself in abbreviation: religion is the substance of culture, culture is the form of religion. Introduction to sociology although émile was the second son, he was chosen to pursue his father’s vocation and was given a good religious and secular education values, religious beliefs, customs, fashions, rituals, and all of the cultural rules that govern social life (durkheim 1895) each of these social facts serves one or more. In its broadest sense, canadian culture is a mixture of british, french, and american influences, all of which blend and sometimes compete in every aspect of cultural life, from filmmaking and writing to cooking and playing sports.
Canada takes up about two-fifths of the north american continent, making it the second-largest country in the world after russia the country is sparsely populated, with most of its residents. The people's republic of china is the second-largest country in the world by land area after russia, and is either the third- or fourth-largest by total area, after russia, canada and, depending on the definition of total area, the united states. An introduction to the country, its history, politics, people and culture insights into the country’s values, customs and etiquette tips on preparing to work with new colleagues from south korea. Culture, history and sport learn about canada's culture, identity, history and sports, as well as funding opportunities available to canadian artists, athletes and organizations discover our national landmarks and attractions and show your pride for canada by taking part in the many cultural events, celebrations and commemorations.
Canada's long and complex relationship with the united states has had a significant impact on its economy and culture canada is a developed country and has the canada is the second-largest country in the with christianity in decline after having once been central and integral to canadian culture and daily life, canada has. Montreal, canada’s second largest city and the second largest mainly french-speaking city in the world after paris, is famous for its cultural diversity ontario at more than 12 million, the people of ontario make up more than one-third of canadians. Indonesia has the largest muslim population in the world, with over 227 million people identifying as muslim even though indonesia is a constitutionally secular state, islam is the by far the dominant religion in the country 99% of the muslims in indonesia are followers of the shafi'i school of sunni jurisprudence. How canada was formed the shaping of canada today canada is the second-largest country in the world it has an area of almost 10 000 000 square kilometres, and is made up of ten provinces and three territoriescanada became a country in 1867, but the story of the people and the land that would become canada is much older.
France, the most visited country in the world and is the second largest economy of europe and the seventh largest in the world with a nominal gdp of $258 trillion its gdp in terms of purchasing. Amsterdam known as a welcoming place for immigrants and asylum seekers, amsterdam, which is the largest city in the netherlands, proudly hosts a diverse populationwith approximately 178 different cultural backgrounds, the country’s capital is a lively blend of friendly people from all over the world. Vast and expansive canada is the second largest country in the world by total area, stretching northward into the arctic circle there’s plenty to explore in this spacious and culturally diverse. Geographical asia is a cultural artifact of european conceptions of the world, for several decades in the late twentieth century japan was the largest economy in asia and second-largest of any single nation in the world, the country currently with the largest muslim population in the world is indonesia, followed by pakistan (115%),.
Thanks in part to a diet that places the emphasis on vegetables and dairy products, the netherlands has been named the healthiest country in the world to eat though the country is better known. Canada ranks third in the world in proven oil reserves and is the world’s fifth-largest oil producer” the united kingdom was again named the third best country even post-brexit. Destination canada, the second largest country in the world occupies most of the northern part of north america, covering the vast land area from the united states in south to the arctic circle in the north it is a country of enormous distances and rich natural resources. Second largest continent on earth (30,065,000 sq km) most countries of russia is the largest country in the world indonesia the capital city of indonesia is jakarta 237,424,363 people live in countries and continents of the world: a visual model author.
2018. | http://weessayqdrv.blogdasilvana.info/an-introduction-to-the-culture-and-life-in-canada-the-worlds-second-largest-country.html |
Proposal Details: We are proposing to take on the current youth provisions and maintain and develop them. We also want to see the building become more community focused with other organizations (schools, schools project, scouts etc) using the asset as a base and meeting place. We also want to develop the current youth provision using the assets facilities of computer suit, workshop and saloon as a place young people can come and be trained in or get experience in a variety of skills, using people in appropriate trades to teach them. We also recognize that the asset has a third undeveloped floor which we want to develop into a conference center which would attract more organizations to use it. In order to sustain the groups volunteers will be needed, we currently have volunteers who are ready to help out up there, we also want current volunteers to stay on in their roles if possible. The buildings maintenance will be seen to by a large group of men who already maintain church buildings in their free time. Financial sustainability will come from a variety of areas, the churches if this goes forward will be paying for a full time youth worker to be their as well as pledging some money for running costs. Local council are also willing to give regular money to ensure provisions are provided. Advertising it as a space for other groups and forming partnerships with schools and school projects will also bring in revenue as well. Lastly we will have someone in place dedicated to just applying for grants, which by partnering with key organizations will open up new doors which haven't been used before. | https://www.toughchoices.co.uk/interests/adam-diment/ |
Over 3,200 COVID-19 cases in Ontario, more than 900 in Toronto
The province is reporting 3,270 new cases of COVID-19 today, including 917 in Toronto.
It's only the second time Toronto's numbers have been this high. The province reported 998 for the city on December 30th.
There were 39,121 tests completed. The province says 9.7 percent came back positive. 2,074 cases are considered resolved which means the number of active cases is now over 24,000.
There were 581 new cases in Peel Region and 389 in York Region.
29 more families are mourning the death of a loved one due to COVID-19. 14 of the deaths were in long term care.
Number of people in hospital is 1,190 compared to 998 yesterday
Number of people in ICU is 333 compared to 327 yesterday
Number of people on ventilators is 194 compared to 228 yesterday.
There have now been 42,419 doses of vaccine administered across the province. | https://www.iheartradio.ca/newstalk-1010/news/over-3-200-covid-19-cases-in-ontario-more-than-900-in-toronto-1.14297859 |
By Rob Higson – Learning Technologist (Curriculum Development)
A significant challenge for any new cohort is quickly creating an environment in which students can socialise and engage with each other academically. In the blended learning environment this includes online and on-campus spaces, with students able to transition socially between both, building on opportunities to interact.
Purposely facilitating academic socialisation as early as possible within a semester can help set the tone and expectations for a cohort for the rest of a module. The first ‘ice-breaker’ activity is a great way to get students to immediately participate during a live session, or within an online space.
During the summer of 2020, the ‘Off-Campus Digital Learning: Building the Best of Blends’ course contained an activity to explore ice breakers which academics could then use across their own practice to help students begin to interact socially online. This page is a collection of some of those contributions made by colleagues. Many of the ideas will also work in a face-to-face setting and using different, or even no technology. The ideas have been grouped by theme but can be used or adapted to suit individual needs.
Introductions
Introduce yourself
- Participants share their name, hometown etc, but then also add something different, for example;
- The meaning of their name
- Photo of a pet they now have, one they used to have, or their ideal pet.
- Use Box of Broadcasts to share a favourite media clip and explain why
- Describe themselves in 3 emojis or images.
- Give the students 15 questions, and the task is to choose one to answer.
- Ask the students to post 3 ‘artefacts’ that tell everyone three different things about them g. one about them as a professional, a personal and their holiday persona. They can be images, logos, song titles, other sounds, references to fragrances, places, hobbies, and so on. They get to write one sentence in which they explain how those three things represent them. Encourage students to comment on each other’s post.
The little-known fact
Participants are asked to share their name, hometown etc and one “little-known fact” about themselves. This “little-known fact” becomes a humanising element for future interactions.
Consider asking for this as a video or audio file, rather than text.
Two truths and a lie
Each participant makes three statements about themselves—two true and one untrue. Other group members try to identify the falsehood.
Interviews
Participants are paired up and spend 5 minutes interviewing each other. The group reconvenes and the interviewer introduces the interviewee to the group.
Group/Team Building Activities
Top 5’s
At the start of the week everyone writes a forum post with a ‘top 5…’ of their choice. For example – top 5 sci-fi movies, top 5 country songs, top 5 ice cream favours, etc. The more variety, the better. Later in the week, everyone comes back to the forum and adds to at least 3 other peoples’ lists. Repeat again at another point in time.
Human Bingo
Staff create a table with twelve cells and each cell has a role, activity or attribute (i.e. has a pet, completed a parachute jump, competed in competitive sport, read particular book), where some will be quite common and others less so. Learners are encouraged to contact each other asynchronously and complete the bingo card, perhaps with a competitively element.
Important Object/Person
Draw or photograph one item on a piece of paper that portrays something (person or object) that is important. Show it to the rest of the class and they have to guess what that identity or importance is.
Course / Subject / Module themes
Select icebreakers that complement the subject or module.
- Ask students to the company they work for/hope to work for and share their LinkedIn profiles or a summary of their CV.
- Find a photo/video of something that relates to the module and ask them to explain why they chose it.
- Identify and share with the discussion board an interesting news article of the week and identify as to why this interests you and how it could be useful to you and others going forward. | https://celt.wp.derby.ac.uk/crowdsourced-icebreaker-activities/ |
I found Vibha through a friend. I enjoy volunteering with them and admire the Vibha team's enthusiasm and perseverence. It is inspiring to see these young folks make time so they can reach out and help those truly in need.
Its my third year with Vibha. I volunteered for a couple of major events of Vibha that focuses on projects supporting underprivileged children. Its great to work with such an organized and dedicated volunteers who strive to make a positive difference in the life of an underprivileged child. Thanks to Vibha which helps to realize my dream of being a part of a noble cause!
I found Vibha to be a great platform for volunteer activity. I was part of the Dream mile volunteer group and the first thing I found out was that the people running the show were willing to trust newbies like me to big responsibilities like managing publicity. This trust helps the organization retain volunteers to a great extent. it also prompted me to find out more about what the organization does and get more personally involved in the project work. The way one of the core volunteers passionately spoke about the spotlight projects of Vibha gave me a sense that we were truly making a difference in the lives of the children we were helping back home. it was a truly amazing experience
I have been a volunteer with Vibha for over a little less than a year now. I have helped them organize their 5k/10k walk and Dandia. Through this journey I have seen the dedication of all the volunteers and the exemplary execution during events. All this comes from their desire and determination to make sure we are able to help underprivileged kids in India to the maximum. Giving more than 2000 hours a month in combined volunteer man hours to help execute an event is no joke. All this from volunteers who have full time jobs. The willingness to sacrifice one's own time to help children thousands of miles away and then do it again and again is something which makes me want to contribute some more each time.. Vibha is truly a great example of collective desire to educate empower and enable the future of India..
I have been a Vibha volunteer for more than a year now. Starting with event organization to raise funds, now I am also Project lead for the Swanirvar project. Swanirvar is a project based in West Bengal, which provides alternative education for rural children as well as includes intervention in government schools, to encourage quality education thus reducing dropouts rates. With so many non-profits catering to similar causes, it was difficult to decide which one to be a part of. In case of Vibha, it is the dedication of all volunteers, transparency in the handling of funds, open-ness to listen to new ideas is what makes it very attractive to me. As a Project lead, when I attend the calls to discuss individual project status, I realize how committed everyone is to provide a better future to the not-so-fortunate children. When I talk to the beneficiary project head, he is very grateful for the efforts & funds Vibha provides. He informs me about the change it has helped improve the lives of children receiving these funds.This motivates me further to do a better job at fund-raising. I hope that Vibha will continue with its great work, and I as a volunteer, shall help make a difference.
I have been a volunteer with Vibha for about a year and a half. It is amazing to see the passion of the volunteers towards the cause. One of the best parts about working with Vibha is - I can be sure where my dollars are going. The money is spent after careful consideration and there are hardly any overhead costs. It is really gratifying to make a difference in the life of these children who, unfortunately, would not have a choice otherwise. Nishu
Vibha is a group of very committed individuals who have been a source of motivation for me to step up give back to the community with the same zeal and enthusiasm! Seeing the results of the efforts of the group is extremely heartwarming and rewarding!
I have been volunteering with Vibha for almost an year and was involved in organizing fund raising events such as the Dream Mile and Diwali Mela. Looking at the commitment and the professionalism with which this organization functions, it is hard to believe that it is run solely by volunteers. All the volunteers are extremely dedicated and it is inspiring to see their commitment to the cause of underprivileged children.
I have had the pleasure of working with some really good people in this organization and ended up making great friends in life outside of our volunteer work. I started participating by helping out in fund raising events for the fun of it but ended up appreciating the real impact that the group had on underprivileged kids back home in India. A big eye opener for me was listening to the stories of success and huge challenges from the Non-Profit organizations in India who Vibha funded at a annual volunteer conference in Atlanta last year.
I have a lot of respect for the cause for which Vibha is advocating. I have personally been involved very actively in helping organize fund-raising events like Dandia and Walk. I love the dedication and energy with which all the volunteers come and work. Hats off to the leads who organize such wonderful professionally organized events!
I have been with Vibha for a little over two years. Vibha's mission of empowering each individual to make a difference is what attracted me. The way projects are evaluated by the projects team for maximum benefit is pretty amazing.
I have been associated with Vibha for 12 yrs now. The thought that a few hours of volunteering can change a kid's life is reason enough for me to join vibha. Volunteer driven and friendly executive/board members. Every team in vibha is lead by a passionate and smart person. I am 100% confident that vibha will succeed in giving a future to kids who don't have one.
I learned about Vibha through firends and joined the organization after attending one of the Vibha events. We organize events to raise money to help the less fortunate kids. A lot of hard work goes into making each event a success and our greatest reward is the progress we hear from the projects we fund. Open discussions, shared responsibilities, professionalism are some of the key aspects of the organization and I have learnt a lot from working with this organization.
I have been volunteering for Vibha for many years now. The reason I continue to volunteer is because I have experienced and understood how our fundraising activities benefit the underprivileged children. With Vibha you have the opportunity to visit the grass roots efforts and to visit projects that benefit from your fundraising. The first time I visited a project in India, I believed in Vibha's mission. And that day, Vibha's mission became my mission. I was privileged to be born into a family that today has led me to where I am....I have access to education, shelter and healthcare. But for many, this is not possible. Vibha believes that every child should have this right and with our help this mission can be achieved. Hence I will continue to volunteer with this organization because I believe in Vibha's mission!
I have been a Vibha volunteer since 2003. I have never volunteered before but after working with Vibha, I realized the importance of volunteering. Vibha is the only organization that has inspired me to do more to the community. All the funds that we raise are completely used to help Kids and nothing is wasted on organizational maintainence. All the volunteers of this organization are very motivated.
I got first involved with Vibha as a project lead of a project run by a NGO in Delhi. As I started attending the project selection committee calls I got more interested in the organization. I liked the way it was structured and its transparency. I liked the fact that the entire organization was run by just volunteers. I also got a chance to volunteer at the Atlanta Dream Mile and the experience I got there and the dedicated volunteers I met changed my life forever. I had always heard of people doing selfless deeds, but experiencing it was something different. The enthusiasm of all volunteers was amazing. I have loved every bit of my time spent volunteering with Vibha.
I began volunteering for vibha in 2005 and since then I have been volunteering every year in some way or another. In the past I have volunteered for other NPOs but I can safely say that Vibha is only such organization that tries to reach out to people needing help anywhere in the world. Whether it is Katrina relief efforts in the US or Pakistan earthquakes, in addition to its main goal of providing under privileged children with the basic needs of life. Vibha also helps single mothers become independent and support themselves as well as their dependents. Last but not the least, Vibha has the best leaders and volunteers I have come across.. I have enjoyed working with other volunteers as well as chapter leads... I felt inspired to give in my best when I saw Rajesh Haridasan (Bay area) and Raina Bijlani (Bay Area) work so hard to bring about a +ve change in the lives of the beautiful children in India who need us and our help.
Organization that's focused on results and actually making a difference in the lives of children. Devoted group of motivated volunteers. Clear, efficient and no-frills operation model.
I have been a volunteer for Vibha for about a year now...despite busy schedules and personal demands , this is one of the very few places that I have seen people from different walks of life coming together to serve a common purpose of giving every child an opportunity. It is very heartening to see the impact of our work reaching underprivileged children when they need it the most and the fact that the organization is entirely volunteer driven is even more inspiring. | https://greatnonprofits.org/reviews/vibha/role:1/page:2 |
Dr. Douglas C. Kubek is board-certified in otolaryngology, facial plastic and reconstructive surgery, and sleep medicine. He specializes in diseases of the sinuses and performs complex sinus surgeries on adults and children. Dr. Kubek was in the first group of surgeons trained in balloon sinuplasty in 2005. Additionally, he is recognized as an expert in reconstruction of skin cancer defects and performs plastic and cosmetic surgery.
Dr. Kubek is one of only three board-certified sleep medicine surgeons in the metropolitan Detroit area. He has served on the national advisory board for the American Academy of Otolaryngology’s sleep medicine section. Dr. Kubek provides treatment for snoring and sleep apnea.
Dr. Kubek is committed to academic medicine and serves as director for the Otolaryngology and Facial Plastic Surgery Residency Program at Henry Ford Macomb Hospital. He is an associate professor of surgery at Michigan State University and holds clinical professor positions at four medical schools. Dr. Kubek is a graduate of Midwestern University Chicago College of Osteopathic Medicine and completed his residency through the St. John Health System-Michigan State University.
Dr. Kubek has been selected by his peers as an Hour Detroit Magazine Top Doc for 6 consecutive years. In addition, he has been voted by his patients as a winner of the Compassionate Doctor Award, Top 10 Doctor Award and Patient Choice Award through Vitals. Dr. Douglas Kubek cares for patients of all ages and is committed to providing the highest quality of compassionate care. | https://www.lakeshoreent.com/doctors/douglas-c-kubek-do/ |
TEXAS COURT OF APPEALS, THIRD DISTRICT, AT AUSTIN
NO. 03-14-00539-CR
Dennis Dwight Galindo, Appellant
v.
The State of Texas, Appellee
FROM THE DISTRICT COURT OF TOM GREEN COUNTY, 340TH JUDICIAL DISTRICT
NO. C-14-0220-SA, HONORABLE BEN WOODWARD, JUDGE PRESIDING
MEMORANDUM OPINION
Dennis Dwight Galindo was indicted for assaulting Dorothy Ortega, who is the
mother of Galindo’s son, D.G. The indictment alleged that Galindo struck Ortega and further alleged
that Galindo had previously been convicted of assaulting a family member. See Tex. Penal Code
§ 22.01(b)(2)(A) (specifying that assault is third-degree felony if offense is committed against person
whose relationship with defendant is described by Family Code and if defendant had previously
been convicted of assaulting similarly described victim). Further, the indictment contained an
enhancement paragraph alleging that Galindo had previously been convicted of felony possession
of a controlled substance. See id. § 12.42(a) (elevating permissible punishment range for third-
degree felony to that of second-degree felony if defendant has previously been convicted of
another felony). After considering the evidence presented during the guilt or innocence phase of the
trial, the district court found Galindo guilty. At the end of the punishment phase, the district court
found the enhancement allegation to be true and imposed a sentence of ten years’ imprisonment.
Subsequent to the district court imposing its sentence, Galindo filed a motion for new trial, and
the motion was overruled by operation of law. In three issues on appeal, Galindo asserts that the
district court erred by failing to set a hearing on his motion for new trial, that he was denied effective
assistance of counsel, and that the evidence is insufficient to support his conviction. We will address
his third issue first and after considering all of his issues, affirm the district court’s judgment.
DISCUSSION
Legal Sufficiency of the Evidence
In his third issue on appeal, Galindo argues that the evidence is legally insufficient
to support his conviction.1 When presenting this challenge, Galindo only asserts that the evidence
is insufficient to support the district court’s determination that Ortega suffered bodily injury and
does not challenge the other elements of the offense.
As mentioned above, Galindo was charged with assaulting Ortega, who is the
mother of one of his children. See Tex. Penal Code § 22.01(b)(2)(A). A person commits assault
if he “intentionally, knowingly, or recklessly causes bodily injury to another.” Id. § 22.01(a)(1).
Moreover, bodily injury is defined as “physical pain, illness, or impairment of physical condition.”
1
On appeal, Galindo also argues that the evidence is factually insufficient to support his
conviction. However, the court of criminal appeals has clarified that the “legal-sufficiency standard
is the only standard that a reviewing court should apply in determining whether the evidence is
sufficient to support each element of a criminal offense.” Brooks v. State, 323 S.W.3d 893, 895
(Tex. Crim. App. 2010); cf. Lucio v. State, 351 S.W.3d 878, 895 (Tex. Crim. App. 2011) (explaining
that “we do not review the factual sufficiency of the evidence . . . on the elements of a criminal
offense that the State is required to prove beyond a reasonable doubt”).
2
Id. § 1.07(a)(8). Furthermore, a factfinder “may infer that a victim actually felt or suffered physical
pain because people of common intelligence understand pain and some natural causes of it.”
Wingfield v. State, 282 S.W.3d 102, 105 (Tex. App.—Fort Worth 2009, pet. ref’d).
Under a legal-sufficiency review, appellate courts view the evidence in the light most
favorable to the verdict and determine whether “any rational trier of fact could have found the
essential elements of the crime beyond a reasonable doubt.” Jackson v. Virginia, 443 U.S. 307, 319
(1979). When performing this review, an appellate court must bear in mind that it is the factfinder’s
duty to weigh the evidence, to resolve conflicts in the testimony, and to make reasonable inferences
“from basic facts to ultimate facts.” Id. Moreover, appellate courts must “determine whether the
necessary inferences are reasonable based upon the combined and cumulative force of all the
evidence when viewed in the light most favorable to the verdict.” Hooper v. State, 214 S.W.3d 9,
16-17 (Tex. Crim. App. 2007). Furthermore, appellate courts presume that conflicting inferences
were resolved in favor of the conviction and defer to that resolution. Clayton v. State, 235 S.W.3d 772,
778 (Tex. Crim. App. 2007).
During the trial, Galindo was called to the stand to testify regarding his recollection
of the events in question. Specifically, he remembered that Ortega asked him to pick up their son
from boxing practice but that he decided to not pick his son up because Ortega did not want their son
around Galindo’s girlfriend. Moreover, he testified that after Ortega learned that he did not pick up
their son, she called him and started yelling at him. In addition, Galindo related that he went over
to Ortega’s house with his friend Shawn Sanchez to talk about the issue and that during their
conversation, she hit him “on my right side. As she hit me, my reaction, I moved back and I put my
3
arm out, and I guess that’s when she’s saying I hit her, but I never touched her. My son was in the
kitchen.” He also stated that “when she hit me, I reached out of reaction and pushed her away.
That’s all I did.” When describing this exchange, Galindo expressly denied hitting or punching
Ortega. In addition, Galindo explained that after Ortega hit him, he and Sanchez tried to leave
immediately and that as they were leaving, Ortega threw a toy at them. Moreover, Galindo testified
that although Ortega’s daughter, A.O., was in the home when this incident occurred, A.O. was in the
living room and could not have seen anything from where she was sitting, but he related that Sanchez
could see the event from where he was.
In his testimony, Galindo explained that it would have been “stupid” for him to punch
Ortega because he had already gone to prison for allegedly assaulting her and would not “risk going
back.” During his testimony, Galindo also stated that Ortega did not have any injuries and that if “I
would have hit her like she said I did with my hand closed, anybody would have an injury.”2 In
addition, he surmised that the charges at issue were brought because Ortega and A.O. were angry
with him for dating someone other than Ortega, and he testified that Ortega’s dislike of his current
girlfriend continued well past this alleged incident.3 As support for this assertion, Galindo testified
that Ortega wrote him letters explaining that she only filed charges against him because he was
2
When questioned about whether it was possible to “hit someone and not use all of your
force,” Galindo answered, “What’s the point in me hitting her? If I’m going to hit her, I’m going
to hit her. What’s -- what’s touching her going to do?”
3
During the trial, Galindo stated that he and Ortega continued to have contact after the
incident. Specifically, he recalled that Ortega texted him months later and asked him to come over
and that Ortega continued to come over to his house to get money for child support; however
Galindo also related that Ortega was not initiating the contact between them.
4
dating someone else.4 Furthermore, Galindo asserted that the length of time between the alleged
incident and his subsequent arrest supports his contention that Ortega pressed charges for improper
reasons. Specifically regarding his arrest, Galindo testified as follows:
See, that’s what’s funny to me because, I mean, I’ve been to prison and they know
that, because of her on a prior conviction. Any other time this happened, they arrest
me right then and there. And if I’m such a -- I mean, if I committed this assault, why
didn’t they get me right then and there. They waited all this time to get me when
times before they -- I’ve ran from one of them, and it got dismissed due to me
pleading guilty on other charges, and they went all over San Angelo looking for me.
And now this time they’re just going to let it go three or four months and indict me?
It don’t make no sense.
In addition to testifying on his own behalf, Galindo called Sanchez to the stand to
testify regarding the events that he witnessed on the day in question and Cindy Barrera to testify
regarding a conversation that she heard after the incident. Sanchez explained that he was present on
the day of the argument, that Galindo and Ortega were arguing because Galindo did not remember
to pick up their son from practice, that he saw Ortega take a “swing at” and hit Galindo, that Galindo
started yelling, that he and Galindo left the home, and that Ortega threw something at them as they
were leaving. In her testimony, Barrera related that she was friends with Ortega’s brother and that
Ortega’s brother told her that Ortega slapped Galindo but was going to get Galindo in trouble for it.
In challenging the sufficiency of the evidence, Galindo also refers to portions of
Ortega’s testimony and to the testimony of Officer Cobey Bradshaw who responded to the 911 call
about the incident. During her testimony, Ortega admitted that the alleged assault did not leave a
4
Galindo did not present any letters from Ortega during the trial.
5
bruise and that she did not see any injuries in the photos that were taken shortly after the offense.
Similarly, in his testimony, Officer Bradshaw explained that he did not see any injuries when he
arrived on the scene after responding to the 911 call and that he did not note any injuries after taking
photographs of Ortega on the day of the offense.
However, in addition to the evidence summarized above, Ortega and A.O. testified
regarding their recollections of the alleged incident. In her testimony, Ortega explained that when
she got home from picking up her son, she and Galindo had an argument about why he did not give
D.G. a ride home. Furthermore, she recalled that the argument escalated and that Galindo “hit me
in the side of my face,” and Ortega expressly denied punching or pushing Galindo. When further
describing the event, Ortega testified that she told Galindo that she was mad because he did not pick
up their son, that he responded by saying that she was really mad because he was dating someone
else, and that the following occurred:
And I told him no, it wasn’t. I told him it was because he didn’t pick up my son.
And he said, “What about all the guys that you take around my son?” And I told him,
“Who do I take around your son?” And he said, “All of San Angelo.” I responded,
“Fuck you.” And that’s when he hit me.
Further, she said that it hurt when Galindo struck her and that it left a “red mark when it happened”
but that the “redness might have gone away by the time” that the police arrived. In addition, she
specified that after Galindo hit her, he walked out the door, picked up a toy in the yard, acted as if
he was going to throw it, dropped the toy, and left the premises.
After Ortega finished testifying, her daughter, A.O., was called to the stand. In her
testimony, A.O. stated that she was sitting in the living room when she heard her mother and Galindo
6
arguing in the kitchen. Moreover, she explained that when she heard them start to argue, she “started
paying attention more” and that she saw Galindo “hit” her mom. In addition, A.O. testified that after
Galindo hit her mom, Galindo “just took off mad. He stormed out of the house.”
As summarized above, there were conflicts in the evidence regarding whether
Galindo assaulted Ortega, and resolution of those conflicts fell squarely within the purview of the
district court as the factfinder. In resolving the conflicts in the evidence, the district court was aided
by evidence regarding Galindo’s extensive criminal history. Specifically, the district court admitted
exhibits showing Galindo’s five prior misdemeanor convictions and three prior felony convictions,
including convictions for theft, evading detention, burglary of a habitation, and multiple convictions
for assault and possession of controlled substances. Regarding those prior convictions, in his
testimony, Galindo admitted that he had two prior felony convictions for assault and for possession
of a controlled substance, conceded that he “probably did” have another conviction for theft, and
agreed that he was also convicted of burglary of a habitation. Moreover, as detailed previously,
Galindo testified that one of his prior convictions was for assaulting Ortega.
In addition, the district court was also guided by testimony from Sanchez in which
he explained that he had been living with Galindo for approximately two months when the incident
occurred and that he had a prior felony conviction for obstruction and retaliation. Similarly, the
district court had the benefit of additional testimony from Barrera in which she admitted that she is
very good friends with Galindo’s current girlfriend, that she spends a lot of time with Galindo and
his girlfriend, and that she had a prior conviction for theft, two prior convictions for possession of
a controlled substance, a prior conviction for forgery, and a prior conviction for failing to appear.
7
Finally, although Officer Bradshaw testified that he did not notice any injury to
Ortega’s face, he also recalled that Ortega seemed upset when he arrived, that the children seemed
worried, and that after talking with the witnesses, he concluded that Galindo had committed an
assault.
In light of the evidence summarized above, of the factfinder’s role in making
credibility determinations and resolving conflicts in the evidence, and of our standard of review for
legal-sufficiency challenges, we conclude that there is legally sufficient evidence establishing that
Galindo assaulted Ortega by striking her and causing bodily injury. See Piland v. State, 453 S.W.3d
473, 479 (Tex. App.—Texarkana 2014, pet. dism’d) (determining that jury could have concluded
that victim suffered bodily injury when victim “testified that it hurt when [defendant] hit him”).
Accordingly, we overrule Galindo’s third issue on appeal.
Motion for New Trial
In his first issue on appeal, Galindo contends that the district court “erred in not
setting a hearing on [his] Motion for New Trial.”
Approximately one week after the district court imposed its sentence, Galindo filed
his motion for new trial. In the motion, Galindo asserted that “[t]he verdict in this cause is contrary
to the law and the evidence” and urged the district court to exercise its “discretion to grant a new
trial.” No affidavits were attached to the motion, and the motion did not further explain how the
verdict was inconsistent with the law or the evidence presented.
A few days after the motion was filed, the district court issued an order granting the
request for a hearing, and a hearing on the motion was held approximately one month after the
8
motion was filed. Moreover, the docketing statement regarding the hearing detailed that during the
hearing, Galindo’s trial attorney explained that “she is reviewing additional evidence” and that
Galindo has retained an appellate attorney. Furthermore, the docketing sheet chronicled that the
district court decided that it “will not rule on Motion for New Trial at this time and will likely allow
it to be overruled by operation of law. If [Galindo] needs a hearing on new evidence,” his attorney
“must request it.” Cf. Stokes v. State, 277 S.W.3d 20, 25 (Tex. Crim. App. 2009) (explaining that
notation of proposed order or hearing date on docket satisfies requirement that motion for new trial
be presented to trial court). Ultimately, the motion for new trial was overruled by operation of law.
See Tex. R. App. P. 21.8 (providing that motion for new trial is deemed denied if court does not rule
on motion “within 75 days after imposing or suspending sentence in open court”).
In his appellate brief, Galindo notes that he retained new counsel for his appeal after
his motion for new trial was filed and asserts without citation to the record the following:
New counsel contacted the trial court and it was determined that a new trial was
denied, but trial judge advised that if needed a new hearing would be held. Appellant
Counsel advised by phone on at least two occasions that hearing was requested, but
no hearing was ever held. Appellant counsel believes that evidence that [Galindo]
was not present at the time of the alleged attack would have been introduced at a
hearing on the new trial.
However, nothing in the record reveals that a request for an additional hearing was
made or that Galindo or his attorney attempted to obtain a setting on the hearing or to get a ruling
on a request for a second hearing. Accordingly, it not entirely clear that Galindo preserved this issue
for appeal. See Perez v. State, 429 S.W.3d 639, 644 (Tex. Crim. App. 2014) (concluding that
because “record contains no evidence that the appellant or his attorney took steps to obtain a
9
setting or attempted to get a ruling on a request for a hearing,” appellant did not preserve error
regarding trial court’s failure to hold hearing on his motion for new trial); see also Gardner v. State,
306 S.W.3d 274, 305 (Tex. Crim. App. 2009) (explaining that presentment must be apparent from
record); Rozell v. State, 176 S.W.3d 228, 230 (Tex. Crim. App. 2005) (providing that reviewing
court should not address whether trial court erred by not holding hearing on motion for new trial if
request for hearing was not presented to trial court); Carranza v. State, 960 S.W.2d 76, 79 (Tex.
Crim. App. 1998) (stating that movant has burden of delivering motion for new trial to trial court
“or otherwise bringing the motion to the attention or actual notice of the trial court”).
In any event, appellate courts review a trial court’s denial of a request for a hearing
regarding a motion for new trial under an abuse-of-discretion standard. See Freeman v. State,
340 S.W.3d 717, 732 (Tex. Crim. App. 2011). Under that standard, a trial court’s ruling will only
be deemed an abuse of discretion if it is so clearly wrong as to lie outside the zone of reasonable
disagreement, Lopez v. State, 86 S.W.3d 228, 230 (Tex. Crim. App. 2002), or is arbitrary or
unreasonable, State v. Mechler, 153 S.W.3d 435, 439 (Tex. Crim. App. 2005). To be entitled to a
hearing on a motion for new trial, the motion must assert matters that “‘are not determinable from
the record’” and assert “‘reasonable grounds’ showing that the defendant ‘could be entitled to
relief.’” See Smith v. State, 286 S.W.3d 333, 338 (Tex. Crim. App. 2009) (quoting Reyes v. State,
849 S.W.2d 812, 816 (Tex. Crim. App. 1993)); see also Reyes, 849 S.W.2d at 815 (explaining that
right to hearing on motion for new trial is not absolute right). To satisfy the second ground, the
defendant “need not plead a prima facie case in his motion for new trial,” but “he must at least allege
sufficient facts that show reasonable grounds to demonstrate that he could prevail.” Hobbs v. State,
10
298 S.W.3d 193, 199-200 (Tex. Crim. App. 2009). Accordingly, courts require “as a prerequisite
to hearing when the grounds in the motion are based on matters not already in the record, that the
motion be supported by an affidavit, either of the defendant or someone else, specifically setting out
the factual basis of the claim.” Smith, 286 S.W.3d at 339.
As set out above, in his motion for new trial, Galindo simply asserted that the verdict
was contrary to the law and the evidence and did not further specify how the verdict was inconsistent
with any governing law, identify the evidence presented during trial that was contrary to the
conviction, or indicate why that issue was not determinable from the trial record.5 Also, no affidavits
were attached to the motion. In addition, although the docketing statement revealed that Galindo’s
attorney stated during the hearing on the motion for new trial that she was reviewing additional
evidence, nothing in the record reveals what the additional evidence was or shows that the additional
evidence was ever presented to the district court. Moreover, although Galindo asserts on appeal that
he believes that evidence showing that Galindo was not present during the alleged assault would
have been introduced at a later hearing, Galindo does not specify that his concern was ever presented
to the district court or set out what this additional evidence would have shown. Furthermore, although
Galindo contested during trial whether the argument between Ortega and him occurred on the date
specified in the indictment, Galindo admitted to being present at Ortega’s home during an argument
5
The court of criminal appeals has explained that a claim that a verdict “was against the law
and the evidence” raises a sufficiency challenge to the evidence but does not present any other claim.
See State v. Zalman, 400 S.W.3d 590, 594 (Tex. Crim. App. 2013). As set out in the previous issue,
we believe that there was sufficient evidence to support Galindo’s conviction, and the sufficiency
of the evidence was determinable from the record.
11
concerning his failure to pick up their son from practice, and Ortega testified that the alleged assault
occurred during that argument.6
For these reasons, we cannot conclude that the district court abused its discretion by
failing to set an additional hearing regarding Galindo’s motion for new trial.
Effective Assistance of Counsel
In his second issue on appeal, Galindo contends that he was denied effective
assistance of counsel because his trial attorney had a conflict in this case. As discussed previously,
the indictment in this case contained an allegation that Galindo had previously been convicted of
assaulting a member of his family or household. On appeal, Galindo contends that he has discovered
that his trial attorney “was the former Assistant District Attorney that had prosecuted him on the
prior assault case. Said trial counsel failed to discuss her prior conflicting interest with [him]. Trial
counsel at trial advised [him] to stipulate to the prior assault.” In light of this, Galindo contends that
his trial attorney had a conflict of interest sufficient to render her representation of him ineffective.
To succeed on an ineffectiveness claim, the defendant must overcome the strong
presumption that his trial “counsel’s conduct falls within the wide range of reasonable professional
assistance” and must show that the attorney’s “representation fell below an objective standard of
reasonableness . . . under prevailing professional norms” and that “there is a reasonable probability
that, but for counsel’s unprofessional errors, the result of the proceeding would have been different.”
Strickland v. Washington, 466 U.S. 668, 688, 689, 694 (1984). To establish an ineffectiveness claim,
6
The indictment alleged that the offense occurred “on or about” November 21, 2013.
12
the defendant must meet both prongs of this standard, and if the defendant fails to meet one of
the prongs, the reviewing court may not find the representation ineffective. See Lopez v. State,
343 S.W.3d 137, 142 (Tex. Crim. App. 2011); see also Garcia v. State, 57 S.W.3d 436, 440 (Tex.
Crim. App. 2001) (stating that failure to satisfy one prong “negates a court’s need to consider the
other prong”). Evaluations of effectiveness are based on the totality of the representation. Frangias
v. State, 450 S.W.3d 125, 136 (Tex. Crim. App. 2013); see also Davis v. State, 413 S.W.3d 816, 837
(Tex. App.—Austin 2013, pet. ref’d) (providing that assessment should consider cumulative effect
of counsel’s deficiencies). Furthermore, even though a defendant is not entitled to representation
that is error-free, a single error can render the representation ineffective if it “was egregious and had
a seriously deleterious impact on the balance of the representation.” Frangias, 450 S.W.3d at 136.
If trial counsel “is burdened by an actual conflict of interest,” there is a limited presumption of
prejudice but only if “the defendant demonstrates” that his attorney “‘actively represented conflicting
interests’ and that ‘an actual conflict of interest adversely affected his lawyer’s performance.’”
Strickland, 466 U.S. at 692 (quoting Cuyler v. Sullivan, 446 U.S. 335, 350 (1980)). If the defendant
fails to present any evidence regarding the issue, his “claim will fail.” Odelugo v. State, 443 S.W.3d
131, 136-37 (Tex. Crim. App. 2014).
In general, direct appeals do not provide a useful vehicle for presenting ineffectiveness
claims because the record for that type of claim is usually undeveloped. Goodspeed v. State, 187
S.W.3d 390, 392 (Tex. Crim. App. 2005). “This is true with regard to the question of deficient
performance . . . where counsel’s reasons for failing to do something do not appear in the record.”
Id. (stating that “counsel’s conduct is reviewed with great deference, without the distorting effects
13
of hindsight”). In addition, before their representation is deemed ineffective, trial attorneys should
be afforded the opportunity to explain their actions. Id. If that opportunity has not been provided,
as in this case, an appellate court should not determine that an attorney’s performance was ineffective
unless the conduct at issue “was so outrageous that no competent attorney would have engaged
in it.” See Garcia, 57 S.W.3d at 440.
Although we recognize that Galindo’s motion for new trial was filed by his trial
attorney, the motion did not present an ineffectiveness claim or contain any affidavits concerning
his trial attorney’s alleged role in his prior conviction. Moreover, after Galindo’s trial attorney
withdrew, his appellate attorney did not attempt to amend the motion for new trial. See Tex. R.
App. P. 21.4 (setting out 30-day deadline for filing amended motion for new trial without leave of
court), 21.8 (providing that motion for new trial is “deemed denied” if not ruled upon “within 75 days
after imposing or suspending sentence”); State v. Moore, 225 S.W.3d 556, 570 (Tex. Crim. App.
2007) (construing rule 21.4 as allowing defendant to file amended motion for new trial provided
that original motion for new trial was timely filed, that amendment was made within 75-day period
within which original motion must be ruled upon before being deemed overruled by operation of
law, and that State does not object to untimely amendment). In addition, Galindo’s trial attorney has
not been afforded an opportunity to explain why she did not disclose her alleged involvement in one
of Galindo’s prior convictions. Perhaps more importantly, nothing in the record before this Court
indicates that Galindo’s trial attorney had any involvement in his prior conviction. Accordingly, the
record before this Court is undeveloped regarding this issue.
In any event, even assuming that Galindo’s trial attorney was the prosecutor involved
in obtaining Galindo’s prior conviction for assault family violence, Galindo has not shown that his
14
trial attorney was actively representing conflicting interests. On the contrary, there is nothing in the
record that remotely indicates that his trial attorney was affiliated with the prosecutor’s office at the
time that she was representing Galindo, and it is not entirely clear how his trial attorney’s alleged
involvement in his prior conviction could result in a conflict in her representation of Galindo for the
separate offense at issue. By agreeing to stipulate to the prior conviction, Galindo merely conceded
the fact that he was previously convicted, not that he agreed with the prior conviction or was actually
guilty of the offense. Furthermore, Galindo has not demonstrated how this alleged conflict adversely
affected his lawyer’s performance. More specifically, Galindo has not shown how his trial attorney’s
decision to encourage him to stipulate to the prior offense prejudiced his case. When discussing the
prior convictions, the State explained during the trial that if Galindo did not agree to stipulate to his
prior offenses, the State would simply call a fingerprint expert to testify that Galindo’s fingerprints
matched those from the individual involved in the prior convictions.
Having determined that the record for this issue is not sufficiently developed and that
Galindo has not shown that he was prejudiced by this alleged conflict, we need not further address
the issue. However, we do note that during the guilt or innocence phase of the trial, on multiple
occasions, Galindo’s trial attorney successfully objected to the testimony of Officer Bradshaw as
hearsay; that his attorney thoroughly cross-examined Ortega on a number of topics, including
whether Ortega really called the police because Galindo was dating someone that she did not like,
whether she invited Galindo over to her house after the alleged offense, and whether Ortega
continued to text Galindo after the alleged assault; and that his attorney cross-examined Ortega’s
daughter, A.O., about whether she disliked Galindo, about whether she made a statement to the
15
police that she wanted Galindo to go to jail, and about whether Ortega likes Galindo’s girlfriend.
Moreover, Galindo’s attorney questioned Galindo regarding whether he had concerns about the fact
that A.O. invoked the Fifth Amendment at the beginning of her testimony before later deciding to
answer questions regarding the event, and Galindo explained, “If she said in her statement on it, and
then comes in and pleads the Fifth, well, what is that? Is it did I do it or did I didn’t do it?” In her
closing argument, Galindo’s attorney asserted that even though the police knew where Galindo was,
he was not contacted about the incident until months later, that any disagreement that occurred
between Galindo and Ortega did not occur on the date listed in the indictment, that Ortega decided
to punish Galindo for his new relationship, and that Ortega had no visible injuries.
Furthermore, in the punishment phase, Galindo’s attorney called several witnesses
to testify on Galindo’s behalf regarding his non-violent nature, regarding the type of father that he
is, regarding efforts that Galindo has made to turn his life around, and regarding the hardship that
Galindo’s incarceration would impose on his family. During her closing argument, Galindo’s attorney
argued that there was no serious injury involved and asked the court to consider the testimony from
the individuals who currently know the type of person that Galindo is when deciding what
punishment to impose.
For all of these reasons, we overrule Galindo’s second issue on appeal.
CONCLUSION
Having overruled all of Galindo’s issues on appeal, we affirm the district court’s
judgment of conviction.
16
David Puryear, Justice
Before Justices Puryear, Pemberton, and Bourland
Affirmed
Filed: July 1, 2015
Do Not Publish
17
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NEW YORK, April 27, 2016 /PRNewswire/ -- Verizon today reported a more than 100 percent increase in the number of suspected incidents of sabotage that have cut off thousands of Verizon customers from critical wireline services.
Last week, Verizon reported that it was investigating 24 suspected criminal incidents in five states since April 13. As of yesterday, that number has increased to 57 incidents in seven states.
The company continues to offer rewards of up to $10,000 for information leading to the arrest and prosecution of individuals who intentionally damage Verizon equipment. Anyone witnessing sabotage should call 911 and then contact Verizon's Security department at 1-800-997-3287.
"These are criminal activities, affecting people's safety and putting lives at risk. We are investigating all reports and pursuing all avenues to assist law enforcement in finding and convicting the perpetrators of these acts," said Michael Mason, Verizon's chief security officer.
The incidents – which are rare under normal circumstances – have continued at an accelerated rate since April 13. Most involve the severing of fiber-optic cables – which can serve hundreds or thousands of customers – or severe damage or vandalization to terminal boxes that serve as distribution hubs for wireline communications services to entire buildings or neighborhoods.
For example, on April 15 in Salisbury, Mass., vandals sliced a group of wires inside a terminal that provided 911 emergency services to local residents. Services have since been restored by Verizon managers.
Other incidents, which are currently under investigation and which have since been repaired, include:
In Delaware , three separate incidents occurred yesterday in Hockessin at fiber hub locations; fiber cables were severed in multiple locations.
, three separate incidents occurred yesterday in at fiber hub locations; fiber cables were severed in multiple locations. In New Jersey , there have been 17 incidents of suspected sabotage since April 13 , primarily in the northern part of the state.
, there have been 17 incidents of suspected sabotage since , primarily in the northern part of the state. In New York , the second most impacted state, 15 incidents are under investigation.
, the second most impacted state, 15 incidents are under investigation. In Pennsylvania , 10 incidents are under investigation, including suspected arson involving a fire-damaged terminal in Drexel Hill .
, 10 incidents are under investigation, including suspected arson involving a fire-damaged terminal in . In Virginia , cables have been severed, or equipment stolen, in eight separate incidents.
, cables have been severed, or equipment stolen, in eight separate incidents. In Maryland , fiber cables were ripped from a hub in Brandywine on April 22 .
"Initial investigation and evidence show that all these incidents involve the deliberate and willful destruction of critical communications facilities," said Mason. "We suspect violations of federal law, and Verizon is working with authorities to pursue criminal charges."
These malicious actions take place as Verizon is experiencing a strike, now in its 15th day, involving about 36,000 employees, primarily in its wireline business in nine Northeast and Mid-Atlantic states plus Washington, D.C. Normally, the company experiences about a half dozen dangerous and reckless acts of destructive vandalism each year.
Verizon Wireless operations have had very minimal impact from the strike.
Verizon Communications Inc. (NYSE,Nasdaq: VZ), headquartered in New York City, generated nearly $132 billion in 2015 revenues. Verizon operates America's most reliable wireless network, with 112.6 million retail connections nationwide. The company also provides communications and entertainment services over America's most advanced fiber-optic network, and delivers integrated business solutions to customers worldwide.
VERIZON'S ONLINE NEWS CENTER: News releases, feature stories, executive biographies and media contacts are available at Verizon's online News Center at www.verizon.com/news/. News releases are also available through an RSS feed. To subscribe, visit www.verizon.com/about/rss-feeds/.
Media contact:
Rich Young
202.515.2514
[email protected]
SOURCE Verizon
Related Links
http://www.verizon.com
| |
The Financial Choice Act Could Send Shock Waves Through Economy
The recent passage of the landmark Financial CHOICE Act by a heavily Republican U.S. House of Representatives could soon send shock waves through the economy because it would dramatically change the future of financial regulation, experts say.
Essentially, the Financial CHOICE Act is designed to significantly amend the Dodd-Frank Wall Street Reform and Consumer Protection Act of 2010, which helped confront systemic risks in the nation’s banking system after the Great Recession.
In mid-April, Republicans introduced the new bill, arguing that Dodd-Frank and the subsequent regulation that ensued harms economic growth and ultimately, the American consumer. On June 8th the House passed the landmark bill by a vote of 233 to 186.
The Financial CHOICE Act, sponsored by Rep. Jeb Hensarling (R-Texas), is the Republican response to reforms put in place after the 2008 economic collapse. Critics of Dodd-Frank have long argued that the law is too restrictive for financial institutions, driving up the cost of compliance, a cost that is ultimately born by the public.
The Financial CHOICE Act is supposed to achieve three major policy goals:
• Convert the Consumer Financial Protection Bureau (CFPB) into a consumer law enforcement agency subjecting it to the congressional appropriations process. • Eliminate CFPB’s supervisory authority over financial institutions and limit its power to take action against entities.
• Remove “Too Big to Fail,” or the Financial Stability Oversight Council’s authority to designate non-bank financial institutions and financial market utilities as “systematically important.”
Republicans insist that the Financial CHOICE Act offers financial institutions of all sizes an avenue to freedom from an overly burdensome and highly intrusive regulatory regime in exchange for the institutions maintaining significantly larger capital reserves than currently required.
The intent of the bill is to create hope and opportunity for investors, consumers, and entrepreneurs by holding Washington and Wall Street accountable, and eliminating red tape to increase access to capital and credit, Republicans say.
Before Americans jump on the Republican bandwagon and buy into the Financial CHOICE Act, let’s briefly review the history of the Great Recession.
When the “housing bubble” burst in 2007, government blame was focused on the eroding standards for mortgage lending, and predatory lending practices often targeted at minority borrowers.
A Federal Reserve Board report found that on the average, African-American borrowers were 3.1 times more likely than white borrowers to receive a higher-rate loan, and Latino borrowers were 1.9 times more likely to receive a higher rate.
Even when credit scores and other factors were taken into account, minorities paid more, the report found. These so-called “toxic sub-prime home loans” that funded mortgages for all types of Americans were packaged into mortgage-backed securities and sold to investors.
When the bargain introductory interest rates ended on the sub-prime home loans, borrowers couldn’t meet their higher loan payments and the loans fell into delinquency.
This had devastating effects throughout the financing system. In addition, the explosion of Wall Street trading in unregulated derivatives helped fuel the crisis and spread it to investors worldwide, creating a global meltdown.
What is truly amazing is that banks and Wall Street, the richest private institutions and entities in the nation, did not have the reserves in their coffers to insulate the economy from collapse.
With the massive profits made by the nation’s and world’s lenders, one would assume there should be trillions of dollars of banking and Wall Street profits stashed somewhere in huge safety deposit box in Zurich, Switzerland. Where did all of the profit go? Likely it was used to buy mansions, Roll Royce automobiles and Rolex watches for the lenders and investment bankers.
In 2009, the Obama administration pumped more than $787 billion in Troubled Asset Relief Program (TARP) funding into the banking system and Wall Street to keep the economy from collapsing into a full-blown depression.
In a report to Congress, Neil Barofsky, special inspector general for TARP, urged one solution: Huge financial conglomerates that are a threat to the financial system should be dissolved into component parts. Since the 2010 passage of the Dodd-Frank Act, 42 Illinois community banks have failed and 106 credit unions in the state have closed in the aftermath of the mortgage crisis.
Following the bank bailout, the Dodd-Frank Act created a Financial Stability Oversight Council to help confront risks. Despite fierce Wall Street lobbying, federal regulators put in place tough new restrictions to prevent the nation’s biggest banks from making risky bets in the quest for profits.
In late 2013, five of the nation’s top regulatory agencies approved the final version of a key component of the Dodd-Frank Act. Dubbed the Volcker Rule, named after former Federal Reserve Chairman Paul Volcker, the measure is designed to prevent risky trading that critics argued could endanger the financial system.
A major focus of the rule concerns so-called “portfolio hedging.” The Volcker Rule is aimed at preventing big banks from engaging in speculative trading activity, or making bets in exotic financial markets. This especially targets proprietary trading, and investments in hedge funds and private equity businesses.
Unfortunately, the Financial CHOICE Act repeals the Volcker Rule. So, who will benefit most from the Financial CHOICE Act: the American consumer or Wall Street? For more housing news, visit www.dondebat.biz. Don DeBat is co-author of “Escaping Condo Jail,” the ultimate survival guide for condominium living. Visit www.escapingcondojail.com. | https://www.dondebat.biz/single-post/2017/06/12/the-financial-choice-act-could-send-shock-waves-through-economy |
HADLEY, MASS. -- Three members of Erin Sullivan's 2019 Williams College men's soccer team that advanced to the NESCAC Quarterfinals finished 8-4-5/5-2-3 in NESCAC have been accorded All-NESCAC recognition.
Senior back Liam Bardong and senior forward Demian Gass were named to the First Team and sophomore midfielder Jules Oberg was a Second Team honoree.
"This is a well-deserved accolade for all three players who, along with several other unsung heroes, guided our team to a very competitive season this fall just short of a national tournament appearance," noted coach Sullivan. "In addition to being superb scholar-athletes, all three young men are excellent players, outstanding teammates, and exemplary community members."
Gass started all 17 games this season and lead the Ephs in scoring with seven goals and he registered one assist for a team high 15 points. He also converted on his one penalty kick opportunity and he tied with Bobby Fabricant for most game-winning goals with two.
Gass started 28 of 39 games for the Ephs and he scored 14 goals and assisted on one for 29 career points. Six of his goals were game-winners.
"Demian had a tremendous senior season and was one of the most lethal attacking players, not only in the NESCAC but, in all of New England," Sullivan stated. "His blinding pace and athletic prowess created so much offense for our team and led to some truly incredible moments in front of goal. His resilience in recovering from prior surgeries to start every single match and log major minutes in his senior season only further demonstrates his physical and mental toughness."
Bardong started 16 games this season and from the back was also a force on offense, tying for third on the team in points with six off of two goals and two assists. A year ago, Bardong was named to the All-NESCAC Second Team. In his Eph career Bardong started 43 of 51 games and netted four goals and added two assists for 10 points.
"Liam was a stalwart at centerback all season," Said Sullivan. "His vocal control of the backline, fearless ball-winning, and warrior-like mentality held so many great teams in check and gave our team a chance to win every match. He also continued to contribute on the offensive end, initiating our build out play, notching two goals and two assists, and being an unstoppable force on attacking restarts. Liam made so many players around him better this season and that epitomizes who he is as a player, leader, and person."
Jules Oberg patrolled the Eph midfield and was instrumental in moving the ball forward into the Ephs' offensive third as well as disrupting opponents' advances in the middle third of the field. Oberg tallied one goal this season and that came on his only penalty kick opportunity and it was a game-winner. That goal and two assists gave Oberg four points on the year.
In just two seasons Oberg has played in 35 matches for the Ephs, starting 27. He has two career goals and four assists for 8 points.
"Jules is a special talent and a complete two-way midfielder," stated Sullivan. "His technical ability, field awareness, and composure are often among the highest on the field in any given game. Jules' instinctive ability to pass and combine in small spaces creates so many positive ideas and tempo for our team in possession. He proved himself to be a clutch player all season and had some of his best performances in some of our highest stakes matches."
Sullivan also paid tribute to this year's senior class, "Demian and Liam are core members of our first recruiting class, an amazing group of young men. Together with fellow tri-captain Chris Fleischer (2018 All-NESCAC selection), Bobby Fabricant, Andrew Mathew, and Teo Pollini, these six seniors guided the team to a very strong second half of the season. Collectively they accounted for 15 of our 25 goals and their performances gave our team a lead in 14 of our 19 games and a chance to win every single match. Despite things not finishing in the manner we had hoped, this senior class leaves an indelibly positive mark on our program and has raised the bar for Williams Soccer and seasons to come." | https://ephsports.williams.edu/sports/msoc/2019-20/releases/20191114fvm8zi |
Pregnant women need about 300 extra calories a day. But, where these calories come from matters. If you eat sweets or junk food, the extra calories do not provide the nutrients your baby needs. As a result, your growing baby will get the vitamins and minerals it needs from your own body.
How many times a day should a pregnant woman eat?
Three small, but balanced, meals and three light snacks throughout the day are a good rule of thumb to ensure you and your baby’s nutritional needs are met.
Do I need to eat more during pregnancy?
Eating well during pregnancy is not just about eating more. What you eat is as important. You only need about 340 to 450 extra calories a day, and this is later in your pregnancy, when your baby grows quickly. This isn’t a lot — a cup of cereal and 2% milk will get you there quickly.
Do you get more or less hungry when pregnant?
Pregnant Always Hungry
Your body is undergoing so many changes in a short period of time to grow your sweet baby, and it is working HARD. To ensure that your body is getting adequate nutrition during this process, you may feel more intense hunger than normal, or you may feel hungry more frequently.
How can I have a beautiful baby during pregnancy?
10 steps to a healthy pregnancy
- See your doctor or midwife as soon as possible.
- Eat well.
- Take a supplement.
- Be careful about food hygiene.
- Exercise regularly.
- Begin doing pelvic floor exercises.
- Cut out alcohol.
- Cut back on caffeine.
Which fruits should avoid during pregnancy?
Bad Fruits for Pregnancy
- Pineapple. Pineapples are shown to contain bromelain, which can cause the cervix to soften and result in an early labor if eaten in large quantities. …
- Papaya. Papaya, when ripe, is actually pretty safe for expectant mothers to include in their pregnancy diets. …
- Grapes.
Do babies in the womb feel hungry?
You can expect pregnancy hunger to both start and peak in the second trimester. During the first trimester, nausea and vomiting (morning sickness) may keep you from feeling like eating much of anything at all. That’s fine: your baby is tiny at this point, and you don’t need to eat any extra calories.
Can you have a miscarriage from not eating enough?
We often hear that smoking or alcohol or not eating enough of nutrient X causes miscarriages, and though some of this is true, women should understand that most miscarriages are not caused by any bad habits or lifestyles at all – simply bad luck.
Can a baby starve in the womb?
A pregnant mother must take care of herself in order to nourish the baby. Eating disorders in pregnancy can starve your unborn baby.
When do you need to start eating more in pregnancy?
Most people don’t need any extra food during pregnancy until the third trimester. Then you may need an extra 200 calories if you are active. Focus on trying to have a healthy, balanced diet and don’t be afraid to seek support if you need it.
How many hours can you go without eating while pregnant?
4. Don’t go more than two or three hours without eating.
Which side of the stomach does a baby stay?
Some doctors specifically recommend that pregnant women sleep on the left side. Because your liver is on the right side of your abdomen, lying on your left side helps keep the uterus off that large organ.
Are you more tired when pregnant with a girl?
Pregnant women carrying girls have a greater chance of experiencing nausea and fatigue, according to the results of a study from the USA’s Ohio State University Wexner Medical Center. In fact, a mother’s immune system is thought to behave in different ways depending on the sex of their baby.
Is it bad to go to sleep hungry while pregnant?
Many women find that their appetite is increased during pregnancy. Waking up hungry likely isn’t a cause for concern, but you’ll need to make sure any late-night eating isn’t making you gain too much weight. Eat a healthy dinner and don’t go to bed hungry. | https://hire4baby.com/newborn/do-you-need-to-eat-more-when-pregnant.html |
Even before becoming a parent, I was always one who felt excited receiving my Student Planner while in school. The layout of calendars and lines for to-do lists gave me thrills. Then as a teacher, the thrill was first purchasing my Lesson Plan book and color coding the subject headings. As a homeschooling mom, I continue to feel the excitement with my plan book, and our family calendar. Now before you think how dorky this may be, I will let you in on a secret, that although I love planning, I do need work on fulfilling all of the plans! As an overplanning mom, I am enthusiastic about many goals but may have the tendency to overbook or have too idealistic goals. I cannot tell you how many times I have to edit the date of my tasks on my planner app to tomorrow. Or how many times I draw an arrow in my hard copy planner to the next day.
The Desire to “Do it All”
I confess to wanting to do too much. It’s not that I purposefully want to stress myself out and overbook my day. I just want to accomplish many things. I see something that interests me and I want to try it.
In another sense, I know life is short, so I also just want to be able to do all that I can while I am able to. There are activities that appeal to me or look like great opportunities for my family. I guess there is that sense sometimes that I don’t want to miss out on this chance.
The Need to Fill in Time
On quieter days (which I must admit are rare to come by) my usual pace of go go go comes to a halt, and it feels oddly empty. So sometimes I feel antsy not having something lined up to do. Then I end up coming up with activities to fill in that gap.
Don’t get me wrong, I do love those “lazy” days and appreciate them, but after first getting over the initial shock of realizing there is nothing on the schedule. Depending on my energy level and the kids’ mood, I may or may not embrace the lazy day. On those days when the kids wear me down so much, I will definitely say YES to those quiet days. And the only thing I want to list on the planner is to relax with a movie or sleep.
The Distraction of the “Shiny New Object”
I confess that I feel a sense of curiosity and enthusiasm for many things. Social media does not help much with this. I love social media because I can see what is happening with friends, family, and people or businesses I follow. But it can also be a major distraction. Let me illustrate my point further. I could have three goals for what I want to accomplish in the day. As I’m trying to get to task one, I hear a notification from my phone or see the red circled number calling out to me that there is a new event in the area. Of course, it looks like fun, so I want to add it to my calendar. Then while on social media, I see adorable pictures of a lesson or craft that someone is doing, and again, of course, it looks like something I want to try out with my kids. I sometimes feel like that dog from the movie, Up, who gets distracted by squirrels. I’ll be in the middle of one task, and then “Squirrel!” Another idea distracts me and I move off course with my original task, and it doesn’t get completed.
I am learning that this can pose a problem for myself because I have only added on to my wish list of goals, making it less attainable to accomplish them all. It can also cause a feeling of insufficiency or lack of success when little to nothing was done.
Not accounting for unscheduled events
As much as I can map out a day by the hour, there is no way to account for anything that can go wrong or that can shift events in the day. As a parent, it is natural for things to go off course because not only are you monitoring your own timeline, but there are also the kids’ events and time table. I can guesstimate the number of potty breaks and have a good idea of how long it is to dress up and to eat. But, one can never tell how many sibling quarrels there will be, or one cannot predict that a piece of a toy will be missing right when you’re trying to leave. One cannot determine how many meltdowns there will be. So even with the most perfect plan, things can go differently than expected. Then those items will be moved to another day.
Reflections and Moving Forward
Moving forward, if I want to remedy the overplanning mom syndrome, I need to try to implement the following:
- I need to cut back. This does not mean forgetting about my goals and cutting them out completely. It means I realize the need for realistic and attainable plans. I need to start off by asking “What can I really accomplish today (this week or this month)?” and have clear actionable steps with an appropriate time frame.
- In addition, allowing a buffer time for unforeseen events will be helpful. Instead of thinking I can finish these five tasks today, I will plan for three or four with the thought of something popping up. If nothing comes up, then even better. There is some additional free time in the day.
- Moving forward, I will need to remove as many distractions as possible, and try to stay focused on the task at hand. That means I can allow for a time to check my e-mail, or look at Facebook. There can be the tendency and addiction to check the phone so many times throughout the day, which can be unnecessary.
- Accept that I can have a lot of goals, but they do not all have to be done right now. I have a “brain dump” area in a notebook that I can pull from when I’m ready to take on the next project. Closing that notebook is key so I don’t see all of the things I want to accomplish, distracting me further from what I’m doing at the moment.
Hopefully soon I will go from an overplanning mom to a “just-right” planning mom. What are some additional tips you have for planning your day? | http://filamteachermommy.filamlearners.com/confessions-of-an-overplanning-mom |
Superstar Israeli and Palestinian chefs and cookbook authors Yotam Ottolenghi and Sami Tamimi spoke to a sold-out house at the Sixth & I Historic Synagogue last week, in celebration of the first U.S. publication of their book Ottolenghi: The Cookbook. While in-the-know-cooks have long imported copies of the book to use in kitchens here, the new edition has both U.S. and European measurements, making it easier for American home cooks to put to good use. Kosher cooks will find almost all of the recipes ready to use in their kitchen with no adaptation because of the emphasis the chefs place on fresh produce and spices.
At their D.C. talk, Tamimi recommended first following their recipes and then adapting them to personal likings in subsequent versions. This gives one a taste of the way the dish has been prepared for decades if not centuries. Lemon and garlic — pointed out local cookbook author Joan Nathan, who led the conversation at the synagogue last week — are two key ingredients in many of the recipes.
Ottolenghi and Tamimi jointly own four restaurants in London but what catapulted them to stardom — and rock star book sales in the U.S., is Jerusalem: A Cookbook, which they published last year. It offers the foods of their childhood that they saw simmered and tended on the eastern and western sides of the city.
WJW sat down with the chefs last week outside Zaytinya restaurant, where local superstar chef Jose Andres welcomed Ottolenghi and Tamimi to Washington, D.C.
WJW: People load so much onto your books. The hope of peace, the merging of cultures. But what is it you set out to convey? What is it you want to share with your readers?
Sami Tamimi: For us it’s just about enjoying food and having fun with it. To go back to Jerusalem was a great experience for us to discover layers, textures, culture.
Yotam Ottolenghi: We wanted to show people Middle Eastern food and help them experience the flavors and layers and textures and to go on a personal journey, which is what we write a lot about. It had been 20 years or more since we had lived there, and we wanted to show how it relates to the way we cook today.
WJW: Especially for people who don’t frequently eat in the Middle East, some of the flavors are exotic. What is your advice for newcomers to your books?
Yotam Ottolenghi: The books were not written for people who live in Jerusalem. They were written for people who live outside, because we do as well. There is a finite, long-life set of ingredients we often use that people can have in their cupboards such as paprika, cumin, turmeric, allspice, and condiments including tahini and pomegranate molasses and preserved lemon. The list we recommend has no more than 15 things, and then you can do most of the cooking.
WJW: What makes the books so appealing to cooking clubs, to people getting together to make your recipes?
Sami Tamimi: I think it’s that the book is about home cooking, family cooking and a way to be part of that.
Yotam Ottolenghi: I think for many it brings a sense of nostalgia, of cooking together. And the recipes are suitable for cooking together because it’s not individually plated, fancy restaurant food. It is home cooking, which used to be and can be family oriented. And there’s a lot of manual work — chopping vegetables — and you need a few pairs of hands to get it done quickly. I’ve been thinking about it the last few days and realized that what we have put together is both comfort food and extremely exotic.
WJW: People also put a lot of hope on to the two of you. If you two can work together, maybe others can. Is that a lot to ask of cookbooks and chefs?
Yotam Ottolenghi: For us it works, but we don’t feel we have to bridge any gaps. We have always gotten on, and the politics never entered our relationship. We didn’t have to overcome any political issues, because we have a very personal relationship and it is not our agenda.
Sami Tamimi: Other people see us as a Jew and Arab working together. We don’t want to say it’s not a good example, but whether it’s typical or realistic for a process for others, whether it will work, I’m not sure, but for us it works, and if people want to get inspired by that, then by all means.
Roast chicken with saffron, hazelnuts, and honey
serves 4
1 large organic or free-range chicken, divided into quarters: breast and wing, leg and thigh
2 onions, coarsely chopped
4 tablespoons olive oil
1 teaspoon ground ginger
1 teaspoon ground cinnamon
a generous pinch of saffron threads juice of 1 lemon
4 tablespoons cold water
2 teaspoons coarse sea salt
1 teaspoon freshly ground black pepper
¾ cup 100 grams unskinned hazelnuts
3½ tablespoons 70 g honey
2 tablespoons rose water
2 green onions, coarsely chopped
1. In a large bowl, mix the chicken pieces with the onions, olive oil, ginger, cinnamon, saffron, lemon juice, water, salt, and pepper. Leave to marinate for at least an hour, or overnight in the fridge.
2. Preheat the oven to 375°F / 190°C. Spread the hazelnuts out on a baking sheet and toast for 10 minutes, until lightly browned. Chop coarsely and set aside.
3. Transfer the chicken and marinade to a baking sheet large enough to accommodate everything comfortably. Arrange the chicken pieces skin-side up and put the pan in the oven for about 35 minutes.
4. While the chicken is roasting, mix the honey, rose water and nuts together to make a rough paste. Remove the chicken from the oven, spoon a generous amount of nut paste onto each piece and spread it to cover. Return to the oven for 5 to 10 minutes, until the chicken is cooked through and the nuts are golden brown.
5. Transfer the chicken to a serving dish and garnish with the chopped green onions.
Reprinted with permission from Ottolenghi: The Cookbook by Yotam Ottolenghi & Sami Tamimi, copyright © 2013, Ten Speed Press, a division of Random House, Inc. Photos by Richard Learoyd © 2013
For the website, a link to method of purchase is required (e.g. Amazon.com, BarnesandNoble.com, Powells.com, IndieBound.org or any online bookseller of your choice). Publisher retains all copyrights and the right to require immediate removal of this excerpt for copyright or other business reasons. | https://www.washingtonjewishweek.com/israeli-palestinian-chefs-speak-at-sixth-i/ |
Functional MRI mapping of brain activation during visually guided saccades and antisaccades: cortical and subcortical networks.
Antisaccade tasks require a subject to inhibit a saccade toward a briefly appearing peripheral target and instead to immediately generate a saccade to an equivalent point in the opposite hemifield. Using functional magnetic resonance imaging (fMRI), we investigated the neural networks required to inhibit reflexive saccades and to voluntarily generate saccades. The results demonstrated that saccade and antisaccade tasks often bilaterally activate frontal, parietal and supplementary eye fields, lenticular nuclei and occipital cortex. Additional activation of bilateral dorsolateral prefrontal cortices, supramarginal gyri, anterior cingulate cortices and thalamus was observed during antisaccade tasks. These results indicate that fronto-parietal and fronto-striato-thalamo-cortical circuits are involved in antisaccade tasks. The fronto-parietal circuit is thought to be related to the planning of saccadic eye movements that involve attentional control, while the fronto-striato-thalamo-cortical circuits connect to cortical region as a feedback network. We speculate that the abnormalities in spatial attention and eye movement control observed in schizophrenia stem from dysfunctions in the fronto-parietal and fronto-striato-thalamo-cortical circuits.
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Since becoming Secretary of State, Rt Hon David Gauke has set out a wide-ranging reform agenda for prisons. Earlier in 2018, he announced improvements in the prison estate, measures to tackle drug use and incentives for rehabilitation.
The independent think tank Reform hosted a major speech, delivered by Rt Hon David Gauke MP, on Monday 18 February at 09.00 for 09.30 – 10.30.
On 18th February 2019, Reform hosted the Rt Hon David Gauke MP, Lord Chancellor and Secretary of State for Justice, who gave a speech outlining his vision for the future of criminal justice. The speech was followed by a short Q&A with an audience of journalists and senior figures from the policy community.
He discussed (I) moving away from short-term prison sentences, (II) making prisons places of rehabilitation, and (III) how ‘technology and radical thinking’ can be used to develop new kinds of non-custodial punishments in the future. Overall, he argued for a new approach to how we punish offenders: not with ‘hard’ or ‘soft’ justice, but with ‘smart’ justice.
The Justice Secretary began by making the case against short prison sentences. The incarceration rate in England and Wales is amongst the highest in Europe, and sentences have been getting longer. Although tougher sentences are appropriate for sexual and violent offences, the Justice Secretary noted that most offenders serving sentences of fewer than six months are convicted of shoplifting.
It was argued that being sent to prison is very disruptive for offenders who already live chaotic lives, as being imprisoned can put strain on family ties and result in the loss of employment, accommodation, and access to support services. This can make it far harder to reintegrate an offender back into society and help them turn away from crime. In addition, inducting an offender into prison is very costly and resource-intensive, and short sentences offer little time to do meaningful work with them.
The case for community sentences?
The Justice Secretary advocated increasing the use of ‘robust’ community sentences. These, it was said, were more effective at reducing reoffending, but were not a ‘soft’ option. The roll-out of new GPS tagging will allow offenders’ movements to be restricted and monitored. Equally, community orders could be used to support offenders with complex needs. A new Treatment Requirement Programme has been developed by the Ministry of Justice in partnership with NHS England, Public Health England, and the Department for Health and Social Care, to support offenders with substance and alcohol addictions as part of a community order.
Nonetheless, the Justice Secretary said that for many offenders a custodial sentence is appropriate. Prisons must be able to help these offenders to turn away from crime. Prisons must, at minimum, be ‘humane, safe and secure’. Prisoners need to feel that that there is hope for the future, and that a life of crime is not their only option. It was argued that this would require the right incentives and privileges in custody, but also that prisoners maintain ‘a link to the outside world’. Greater use of Release on Temporary License, which allows prisoners to go out into the community for work or community payback, helps to reintegrate offenders and has been shown to reduce reoffending. | https://reform.uk/events/major-speech-rt-hon-david-gauke-mp-lord-chancellor-and-secretary-state-justice |
HIT innovation will continue to change the way we collect and share health related data. Mobile platforms and social media are the next frontier in enhancing the provider-patient relationship. Patients are increasingly more familiar with these platforms, and hospitals and researchers are learning how to exploit these technologies. This roundtable will explore the possibility of leveraging these opportunities.
Session Objectives: At the end of this session, participants should be able to: 1. describe the value of mobile technologies as HIT platforms; 2. discuss how HIT innovations are changing the way we collect data.
Organizer:
Diane L. Adams, MD, MPH, CHS-III
Moderator:
Table 1
Table 2
Table 3
Table 4
Table 6
Table 7
Table 8
See individual abstracts for presenting author's disclosure statement and author's information. | https://apha.confex.com/apha/139am/webprogram/Session32451.html |
# Recency illusion
The recency illusion is the belief or impression that a word or language usage is of recent origin when it is long-established. The term was coined by Arnold Zwicky, a linguist at Stanford University primarily interested in examples involving words, meanings, phrases, and grammatical constructions. However, use of the term is not restricted to linguistic phenomena: Zwicky has defined it simply as, "the belief that things you have noticed only recently are in fact recent".
According to Zwicky, the illusion is caused by selective attention.
## Examples
Linguistic items prone to the recency illusion include:
"Singular they": the use of "they," "them," or "their" to reference a singular antecedent without specific gender, as in "If George or Sally come by, give them the package." Although this usage is often cited as a modern invention, it is quite old. The phrase "between you and I" (rather than "between you and me"), often viewed today as a hypercorrection, which could also be found occasionally in Early Modern English. The intensifier "really," as in "it was a really wonderful experience," and the moderating adverb "pretty," as in "it was a pretty exciting experience." Many people have the impression that these usages are somewhat slang-like, and have developed relatively recently. They go back to at least the 18th century, and are commonly found in the works and letters of such writers as Benjamin Franklin. "Literally" being used figuratively as an intensifier is often viewed as a recent change, but in fact usage dates back to the 1760s. "Aks" as a production of African American English only. Use of "aks" in place of "ask" dates back to the works of Chaucer in Middle English, though typically in this context spelled "ax". The word "recency" itself. It is commonly used in consumer marketing ("analyze the recency of customer visits") and many think it was coined for that purpose. But its first known use was in 1612. | https://en.wikipedia.org/wiki/Recency_illusion |
Taco Terpstra, Trade in the Ancient Mediterranean: Private Order and Public Institutions. Princeton: Princeton University Press, 2019. x + 274 pp. $40 (cloth), ISBN: 978-0-691-17208-8.
Reviewed for EH.Net by Peter Temin, Department of Economics, MIT.
This is a synthetic book that aims to enlarge the narrative of ancient economic history. Terpstra reaches three conclusions about economic progress from the early years of the Iron Age through the Roman Empire. First, private mechanisms were essential to the operation of the ancient economy. Second, the public and private realm interacted in fluid ways. Third, economic growth was supported by public institutions.
Unhappily, the book is almost inaccessible to modern economic historians. The three conclusions listed above were taken from the book’s conclusions, not its introduction. The introductory chapter instead consists of a long discussion of the literature on the progress of history. Terpstra concludes his introductory survey by adopting the framework introduced by Douglass North, John Wallis and Barry Weingast in Violence and Social Orders (Cambridge University Press, 2009). He follows a recently published book on this period by J. G. Manning, The Open Sea (Princeton University Press, 2018), which is cited by Terpstra and adopts the same theoretical framework.
The strength of a book like this is in its details. The problem for readers is to evaluate the details and decide if they form patterns. The overall question is whether Terpstra provides clues that are more detailed than his summary. For example, he says when discussing the interaction between Phoenician traders and various Mediterranean islands, “In the Greek world, as elsewhere, the resolution of commercial conflicts was doubtless overwhelmingly done informally. Yet as a last resort it might well have involved the use of official courts of law” (p. 61). The conditional tense of this conclusion reflects the paucity of information. It suggests that Terpstra, like his readers, had trouble aggregating his examples.
Terpstra stresses the role of “public friendships” in chapter 2. These were indications that a member of a foreign trading network could be considered as a friend of the designating group. This is one of Terpstra’s “fluid ways” that do not fit easily into our modern framework of public and private. Is this concept useful? Terpstra notes that the prevalence of public friendships decreased as Roman influence grew at the end of his period. This suggests that public friendships were an imperfect substitute for public institutions. Terpstra appears to be showing us the long evolution of public institutions that are better known from Roman sources by looking at public institutions from the other end. Instead of telling a static story of early trade, he tells a dynamic story about the growth of trading institutions. He says as much in the conclusions to chapter 2: “The positive effect of Greek public friendship and Roman imperial ideology on diaspora trade disincentivized state representatives from investing in public enforcement infrastructure” (p. 75). As North, Wallis and Weingast argue, violence determines the direction of peacetime trade.
Terpstra turns his attention to the Hellenistic period in chapter 3. He uses the “Zenon archive” as a lens into this period. Zenon was an employee of Apollonios, a finance minister of Ptolemy II, and the archive records his accounts. Zenon mostly recorded public business in his letters, but there are other activities going on that may well have been for private gain. As anyone who has worked with letters knows, there are frequent omissions in the surviving record that obscure precisely what was going on.
Egypt was monetized in the third century BCE, and banks were ubiquitous under Ptolemy II. Apollonios imprisoned people, but he seemed to be interested in the long-run future of the state. In Terpstra’s words (p. 92): “If Apollonios had asymmetrically used state force for his own ends, this would have been seen by the local population as extralegal and extortionate. … Employing public means of violence had to be left strictly as a last resort to avoid damaging economic productivity and diminishing rent and tax revenue.” Apollonios was, in modern terms, a reasonably honest civil servant.
Terpstra looks at Rome in chapter 4, saying that, “It seems an uncontroversial proposition that the ongoing unification of currency and metrological systems under the Roman empire further facilitated economic development” (p. 126). Having just turned from the Hellenistic to the Roman world, it would have been preferable if Terpstra had added the Roman Republic to his list of government entities. The main body of the chapter is concerned with witness rankings as signs of social status, based on surviving witness lists. Terpstra quotes many ancient sources and modern interpretations, and he might have clarified his argument by the use of “social capital.” This concept, introduced by Robert Putnam in several books, could help describe how merchants and others shifted from private order to public institutions.
Chapter 5 is a retrospective view to show what was lost as the Roman Empire made its long decline. Terpstra introduces a concept he calls “economic trust” (p. 170). He would have done better to use the concept of social capital. Partha Dasgupta (Economics: A Very Short Introduction, Oxford University Press, 2017, p. 31) argues that social capital is the core of economics, embodied in a simple question: “Under what circumstances would the parties who have reached agreement trust one another to keep their word?”
Terspstra closes with speculations about the decline and fall of the Roman Empire. He cites Kyle Harper (The Fate of Rome, Princeton University Press, 2017) to argue that climate may have mattered, but his main aim seems to reverse Gibbons’ view by asserting that Christianity supported economic activity by maintaining what he calls economic trust and others call social capital.
This book contains many interesting details about ancient Mediterranean trade, although its focus is on economic institutions rather than inter-regional trade. It attempts to use modern economic theories to generalize from detailed examples. General readers might find John Hicks, A Theory of Economic History (Oxford University Press, 1969) — cited by Terpstra — a more accessible view of trade growth in the ancient Mediterranean.
Peter Temin is Professor Emeritus of Economics, MIT, and the author of The Roman Market Economy (Princeton, 2013) and, most recently, “Words and Numbers: A New Approach to Writing Ancient History,” Journal of Interdisciplinary History 50 (1), 31-58 (Summer, 2019).
Copyright (c) 2019 by EH.Net. All rights reserved. This work may be copied for non-profit educational uses if proper credit is given to the author and the list. For other permission, please contact the EH.Net Administrator ([email protected]). Published by EH.Net (September 2019). All EH.Net reviews are archived at http://www.eh.net/BookReview. | https://eh.net/book_reviews/trade-in-the-ancient-mediterranean-private-order-and-public-institutions/ |
In my last blog I gave the overview of the health status of our community from my six monthly report. The advantage of a progress report is that it forces me to list everything that we do, how we experience this, and how we are faring. In this blog I’d like to share another chapter of the progress report about the supervision and in-service training of our staff.<!–more–>
A reminder: our staff usually starts working for us without previous working experience as there are no courses in Nicaragua to prepare people for working with intellectually disabled adults. Therefore it is up to me to offer our new staff, as quickly as possible, a ‘tool kit’ which they need, in order to contribute to the well-being of our residents and the quality of their care. My approach is that every bit of professional support should also be personal support, so that everything they learn on the ‘work floor’ will be useful for them in their personal lives. And this happens, and is much appreciated.
What does our in-service training consist of?
Once a month I organize a two-hour training session on a Thursday morning for the entire team on a theme which the team chooses. Topics which we have covered in recent months include: learning how to attentively observe, and how to draft a step-by-step plan towards achieving a development goal for our residents. Below I clarify some other topics.
Supervision
A little while back I started a system by which members of staff supervise each other. ‘Supervision’ is not very common in Nicaragua, as people are more used to being controlled by the boss. The idea of identifying strong and weak points in a person’s work performance and coming up with performance enhancing proposals is a real novelty here. In the early stage it was really hard for staff to have enough courage to criticize each other. But since then, staff have become more open to this approach and realize the added value that supervision can give. Of course it is a theme which I strengthen and evaluate every so often.
How does supervision work?
We do ‘mutual supervision’ once a week with staff working in pairs, they themselves choosing the right moment for it in the day. It’s an exercise in learning how to observe and assess the work of a colleague according to specific criteria and a focus on strong and weak aspects. It is agreed that the results are put down on paper, with a suggestion and a compliment. Before this ‘gift’ is handed over to the supervised colleague, I check whether the feedback given is clear and well-expressed.
Evaluation
We also organize regular evaluations on how we are doing as a team. Everyone does homework and answers some questions. During the session we discuss the answers and draw conclusions, looking at the weak and strong points of our team work, with special attention to reinforcing staff member’s own personal responsibility for the functioning of the team. I also observe and reflect on people’s work in order to provide the encouragement and appreciation which can result in improved staff performance (coaching on the job).
And what’s more …
Our team also evaluates the individual activities we have used so far to stimulate each of our residents. What are the needs of each of the residents? What do we offer? At which time of day do we offer activities? etc. It appears we have sometimes been too ambitious and not always been able to do what we wanted, which necessitates the need for making adjustments and searching for strategies to improve the quality of our work.
Over the years I’ve spent much time writing about what we should and should not do. When working with more people, clarity about what is expected is crucial as individual staff should not simply do as they deem fit. We carefully minute the decisions we take in our meetings at the beginning of each working day. We also keep a record of which medication was given when to whom by whom.
In March I designed an easy-to-use form which helps to record in concrete terms the progress staff make and the challenges they face in their stimulation activities with our resident core members. Our team becomes more aware that they need to think in terms of progress made in millimeters rather than in big leaps.
Between January and March we asked Sari, a volunteer, to introduce to staff in monthly sessions the concept of and importance of ‘chakras´. For our team this was a total novelty (as it also is in Nicaragua), but they enjoyed the sessions tremendously. Due to COVID-19 we had to cancel follow-up sessions, hopefully only for the time being.
Finally
We encourage staff to keep studying. In February Ana started her nursing training on Saturdays. But because of the corona virus and the not-so-good way the university organized the training she stopped again after a month. I myself have just finished a 9-month online course on ‘Family Constellations’ which is useful for me in guiding our staff in their personal processes or when working with people who seek me out as a psychologist. Because of COVID-19 a presentation week scheduled at the end of March for all on-line course participants in a nearby country was cancelled, so I’ll have to wait for when this week will be re-scheduled and for whether I will be allowed to travel again. The expectation is that our national airports will remain closed till at least August.
It is a stimulating part of my work to help people become more aware of their work and life, as it will give them more peace at work and in themselves. | https://www.vivirjuntos.org/in-service-training/?lang=en |
Un-Pitches are meant to be informal and brief introductions of yourself, your idea, or your organization’s problem situation. Un-pitches can include designing technology, research, policy recommendations, and more. Students and social impact representatives will be given 3 minutes to present their Un-Pitch. In order to un-pitch, please share 1-3 slides, as PDF and/or a less than 500-word description—at this email: [email protected]. You can share slides and/or description of your ideas even if you aren’t able to attend. Deadline to share materials: midnight October 1st, 2018.
Are you a local nonprofit or community organization that has a pressing challenge that you think technology might be able to address, but you don’t know where to start?
If so, join us and the UC Berkeley School of Information’s IMSA (Information Management Student Association) for Un-Pitch Day on October 27th from 4 – 7pm, where graduate students will offer their technical expertise to help address your organization’s pressing technology challenges. During the event, we’ll have you introduce your challenge(s) and desired impact and partner you with grad students with activities to explore your challenge(s) and develop refined questions to push the conversation forward.
You’d then have the opportunity to pitch your challenge(s) with the goal of potentially matching with a student project group to adopt your project. By attending Un-Pitch day, you would gain a more defined sense of how to address your technology challenge, and, potentially, a team of students interested in working with your org to develop a prototype or a research project to address it.
Our goal is to both help School of Information grad students (and other UCB grad students) identify potential projects they can adopt for the 2017-2018 academic year (ending in May). Working in collaboration with your organization, our students can help develop a technology-focused project or conduct technology-related research to aid your organization.
There is also the possibility of qualifying for funding ($2000 per project team member) for technology projects with distinct public interest/public policy goals through the Center for Technology, Society & Policy (funding requires submitting an application to the Center, due in late November). Please note that we cannot guarantee that each project presented at Un-Pitch Day will match with an interested team.
Light food & drinks will be provided for registered attendees.
Registration is required for this event; click here to register.
4:45 – 5:00pm CTSP will present details about public interest project funding opportunities and deadlines.
5:00 – 6:00pm Team up with grad students through “speed dating” activities to break the ice and explore challenge definitions and develop fruitful questions from a range of diverse perspectives.
6:00 – 7:00pm Open house for students and organizations to mingle and connect over potential projects. Appetizers and refreshments provided by CTSP.
This post is for the 2016 Un-Pitch Day, click here for the 2017 event.
Are you a local non-profit or community organization that has a pressing challenge that you think technology might be able to solve, but you don’t know where to start? Or, are you a Berkeley graduate or undergraduate student seeking an opportunity to put your technical skills to use for the public good?
If so, join us for Un-Pitch Day on October 21st from 3 – 7pm, where Berkeley graduate students will offer their technical expertise to help solve your organization’s pressing technology challenges. During the event, non-profits and community organizations will workshop their challenge(s) and desired impact. Organizations will then be partnered with graduate student technology mentors to define and scope potential solutions.
All attending non-profits and community organizations will have the opportunity to pitch their pressing challenge(s) to student attendees with the goal of potentially matching with a student project group to adopt their project. By attending Un-Pitch day, organizations will gain a more defined sense of how to solve their technology challenges, and potentially, a team of students interested in working with your organization to develop a prototype or project to solve it.
The goal of this event is to both help School of Information master’s students (and other UCB grad students) identify potential projects they can adopt for the 2016-2017 academic year (ending in May). Working in collaboration with your organization, our students can help develop a technology-focused project or conduct research to aid your organization.
Workshop with Caravan Studios, a division of TechSoup, to frame your problem definition and impact goals.
Team up with student technology mentors to define and scope potential solutions and create a simple visual artifact outlining the idea.
CTSP will present details about public interest project funding opportunities and deadlines.
Attendee organizations present short project pitches (2-3 mins) to the room.
Open house for students and organizations to mingle and connect over potential projects. Appetizers and refreshments provided by CTSP.
Five of CTSP’s eleven collaborative teams will present progress and reflections from their work in two exciting Bay Area events happening this month, and there’s a common theme: How can we better involve the communities and stakeholders impacted by technology’s advance? On May 17, three teams sketch preliminary answers to questions about racial and socioeconomic inclusion in technology using findings from their research right here in local Bay Area communities. Then, on May 18, join two teams as they discuss the importance of including critical stakeholders in the development of policies on algorithms and drones.
Please join us on May 17 and 18, and help us spread the word by sharing this post with friends or retweeting the tweet below. All the details below the jump. | https://ctsp.berkeley.edu/category/events/ |
Japan. Studied at Nihon University College of Art.
Select Awards. He received two major internationally recognized awards - The Japan Record
Awards - equivalent to the U.S. Grammy Awards. Nearly 50 of his songs reached the Top 100,
10 reached in the Top 10, and 1 recorded sales of over 1 million copies and reached No. 1 on
the Oricon hit chart.
Discography. Over 90 musical credits recorded, with recent activities including “Goog Became
a King” (2017), Sachiko Kobayashi single “Hyakka Ryouran Appale Jipang” (Fabulous Japan!)
(2016), “GG Electronic Blue” (2016), a Candyroid album (2016), Candies album “Memories FOR
FREEDOM” (2015) and Mie Nakao album “Surechigai - It’s My Life” (2015).
Select Activities
1964-1970 Member of a popular rock band, The Out Cast, whose music was produced by
industry leading Watanabe Music Inc.
1971-1981 Heavily involved in composing and songwriting, including numerous hits for the
legendary Candies, Hiromi Go and a movie soundtrack for “Shiosai” by Yukio
Mishima. Served as judge on a Fuji TV hit show “Kimi Koso Star Da” (1975).
1982-2012 Founded AMVOX Inc., a music publisher and professional music school, with
annual enrollment exceeding 300 students. He served as president for 30 years.
1995-2010 Elected three times by members to serve as JASRAC Councilor Member. A
regular member of JASRAC since 1971.
1998- Founded music publisher Music Gate Inc. and a studio in Honolulu and over time
increased activities in the United States, releasing his own original and other
music, including through Warner Music Group.
Memberships. BMI (Broadcast Music, Inc.), ASMAC (American Society of Music Arrangers
and Composers), AFM (American Federation of Musicians), JASRAC (Japanese Society for
Rights of Authors, Composers and Publishers) and J-SCAT (Japan Songwriters & Composers
Association).
Copyright. Yusuke Hoguchi All Rights Reserved. | http://hoguchi.com/ |
Welcome back to Reading, Reading, Reading!
This month was a PACKED month for me! I started the month off with a week off, and then was rushed back into school mode by finishing several final projects and final exams. I had my last exam yesterday and I am SO happy to be finished with this semester and am extremely excited for next semester!
Among all of the chaos, I managed to read nine books, which I am beyond happy about! I read two January ARCs, two eARCS, three backlist books, and two classics!
The first book I read this month was “Bellevue Square” by Michael Redhill. I picked this up at Indigo, since over the past few months it has been in their front display with all of there top selling books. While the synopsis was very intriguing to me, I ended up really disliking the book. The story started off very strong, but ended up spiralling in several different directions and the ending made ZERO sense to me. I gave it 1.5/5 stars.
The second book I read this month was “The Field Guide to the North American Teenager” by Ben Philippe. I received an unsolicited ARC from Harper Collins Canada back in December and was really excited to read this book! I ended up really enjoying it, and posted my review for it earlier this month which you can read here.
The next book I read this month was “The Catcher In The Rye” by J.D. Salinger. I read this book in my English Lit class during December and I finished the last quarter of it in January. I did not love this book, but I still enjoyed it. I ended up giving it 3/5 stars.
The third book I read this month was “A Ladder to the Sky” by John Boyne. I received a finished copy of this book from Penguin Canada earlier this month and was highly anticipating it because I throughly enjoyed John’s earlier novel “The Boy in the Striped Pajamas”. I absolutely loved this book, and you can read my full review here.
I then finally finished “1984” by George Orwell. If you have read my previous TBRs over the last three months, you will notice that this book was on every single one of them! I began reading this book in October with a book group/club in my English Lit class and we finished it two weeks ago. While I thought I would love this book, and ended up disliking the second half of the novel. I gave this book 2.5/5 stars, but I still encourage you to read it, as there are a lot of important messages enclosed within the novel.
While finishing “1984”, I began and finished “Behind Closed Doors” by B.A. Paris. I was recommended this book a countless number of times over the past two months, since I have been reading and loving domestic thrillers. I fully expected to rate this book 5/5 stars, but was very disappointed with the story. It started off very eery and suspenseful, but I did not find anything very special about this novel. I gave it 3/5 stars.
Over the past three months, I have barely read any dystopian novels. And after reading “1984”, I was very interested to see what I would think about “Golden State” by Ben H. Winters novel. When I first heard about it, it seemed very “1984”-esque. I received an ARC of it from Hachette Book Group Canada, and was even more excited to read it after finding out that it was one of the January Book Of The Month picks. I enjoyed this novel much better than 1984, but I found this plot line confusing as well. You can read my full review of this novel here.
I have several NetGalley eARCs that are due to come out within the first week of February, so I wanted to read some of those during the end of January if I wasn’t totally swamped with school work. Luckily, I read eBooks very quickly in general, and since I had a few days free from studying, I thought it would be beneficial to take those days to read some of my eARCs! The first eARC I read was “Roam” by C.H. Armstrong. I received an eARC from Central Avenue Publishing via a NetGalley wish! I really enjoyed this novel and think that this is one of the most important books I have read in a long time. My full review will be out in just a few days!
Those are all of the books I read this month! How many books did you read this January? What was your favourite one? Let me know in the comments!
Good Night Book Owls! | https://readingreadingreading.com/2019/01/31/january-2019-wrap-up/ |
- et al.
Abstract
Global solar photovoltaic capacity increased by 35% from 2013 to 2014, and this upward growth trend is likely to continue. Power grids must adapt to accommodate increasing shares of renewable energy penetration. The impact of increasing solar penetration is quantified in terms of the variability and the predictability of net load behavior. As expected, due to variable nature of solar technologies, the predictability of net load decreases with increasing penetration. The need for novel net load forecasting techniques that allow for improved management of grids with high solar penetration is discussed. Integrated net load forecasting methods (solar power forecasts are used as inputs) are recommended for grid operators and utilities. Analysis of forecast performance reveals that the solar variability plays a dominant role in driving the forecasting errors, even more so than the penetration levels. Net load and solar forecast errors are found to be co-integrated, sharing a common stochastic drift. Thus, the solar irradiance time series is sufficient to provide necessary information for the future planning of reserve allocation and storage design for power grids. The benefits of proposed techniques are presented for real- time energy imbalance markets. Design variables regulating the electricity markets and grid timelines govern the system dynamics, which in turn highlight the benefits of forecasting. Increased flexibility of operations at shorter time-scales emerges as a key factor for the reliable and efficient management of power grids
Main Content
Enter the password to open this PDF file: | https://escholarship.org/uc/item/0tq176zz |
11/19/2002Yun (Helen) He, SC20021 MPI and OpenMP Paradigms on Cluster of SMP Architectures: the Vacancy Tracking Algorithm for Multi- Dimensional Array.
5 11/19/2002Yun (Helen) He, SC2002 5 Vacancy Tracking Method A(3,2) A(2,3) A(3,2) A(2,3) Tracking cycle: 1 – 3 – 4 – 2 - 1 A(2,3,4) A(3,4,2), tracking cycles: A(2,3,4) A(3,4,2), tracking cycles: 1 - 4 - 16 - 18 - 3 - 12 - 2 - 8 - 9 - 13 - 6 - 1 1 - 4 - 16 - 18 - 3 - 12 - 2 - 8 - 9 - 13 - 6 - 1 5 - 20 - 11 - 21 - 15 - 14 - 10 - 17 - 22 - 19 - 7 – 5 5 - 20 - 11 - 21 - 15 - 14 - 10 - 17 - 22 - 19 - 7 – 5 Cycles are closed, non-overlapping. Cycles are closed, non-overlapping.
8 11/19/2002Yun (Helen) He, SC2002 8 Memory Access Volume and Pattern Eliminates auxiliary array and copy-back phase, reduces memory access in half. Has less memory access due to length-1 cycles not touched. Has more irregular memory access pattern than traditional method, but gap becomes smaller when size of move is larger than cache-line size. Same as 2-array method: inefficient memory access due to large stride.
11 11/19/2002Yun (Helen) He, SC2002 11 Pure MPI A(N 1,N 2,N 3 ) A(N 1,N 3,N 2 ) on P processors: (G1) Do a local transpose on the local array A(N 1,N 2,N 3 /P) A(N 1,N 3 /P,N 2 ). A(N 1,N 2,N 3 /P) A(N 1,N 3 /P,N 2 ). (G2) Do a global all-to-all exchange of data blocks, each of size N 1 (N 3 /P)(N 2 /P). each of size N 1 (N 3 /P)(N 2 /P). (G3) Do a local transpose on the local array A(N 1,N 3 /P,N 2 ), viewed as A(N 1 N 3 /P,N 2 /P,P) A(N 1,N 3 /P,N 2 ), viewed as A(N 1 N 3 /P,N 2 /P,P) A(N 1 N 3 /P,P,N 2 /P), viewed as A(N 1,N 3,N 2 /P). A(N 1 N 3 /P,P,N 2 /P), viewed as A(N 1,N 3,N 2 /P).
16 11/19/2002Yun (Helen) He, SC2002 16 Scheduling for OpenMP Static: Loops are divided into n_thrds partitions, each containing ceiling(n_iters/n_thrds) iterations. Affinity: Loops are divided into n_thrds partitions, each containing ceiling(n_iters/n_thrds) iterations. Then each partition is subdivided into chunks containing ceiling(n_left_iters_in_partion/2) iterations. Guided: Loops are divided into progressively smaller chunks until the chunk size is 1. The first chunk contains ceiling(n_iter/n_thrds) iterations. Subsequent chunk contains ceiling(n_left_iters /n_thrds) iterations. Dynamic, n: Loops are divided into chunks containing n iterations. We choose different chunk sizes.
18 11/19/2002Yun (Helen) He, SC2002 18 Scheduling for OpenMP within one Node (cont’d) 8x1000x500: N_cycles = 132, cycle_lengths = 8890, 1778, 70, 14, 5 32x100x25: N_cycles = 42, cycle_lengths = 168, 24, 21, 8, 3.
20 11/19/2002Yun (Helen) He, SC2002 20 Pure MPI and Hybrid MPI/ OpenMP Across Nodes With 128 CPUs, n_thrds=4 hybrid MPI/OpenMP performs faster than n_thrds=16 hybrid by a factor of 1.59, and faster than pure MPI by a factor of 4.44.
21 11/19/2002Yun (Helen) He, SC2002 21 Conclusions In-place vacancy tracking method outperforms 2-array method. It could be explained by the elimination of copy back and memory access volume and pattern. Independency and non-overlapping of tracking cycles allow multi-threaded parallelization. SMP schedule affinity optimizes performances for larger number of cycles and small cycle lengths. Schedule dynamic for smaller number of cycles and larger or uneven cycle lengths. The algorithm could be parallelized using pure MPI with the combination of local vacancy tracking and global exchanging.
22 11/19/2002Yun (Helen) He, SC2002 22 Conclusions (cont’d) Pure OpenMP performs more than twice faster than pure MPI within one node. It makes sense to develop a hybrid MPI/OpenMP algorithm. Hybrid approach parallelizes the local transposes with OpenMP, and MPI is still used for global exchange across nodes. Given the total number of CPUs, the number of MPI tasks and OpenMP threads need to be carefully chosen for optimal performance. In our test runs, a factor of 4 speedup is gained compared to pure MPI. This paper gives a positive experience of developing hybrid MPI/OpenMP parallel paradigms.
Download ppt "11/19/2002Yun (Helen) He, SC20021 MPI and OpenMP Paradigms on Cluster of SMP Architectures: the Vacancy Tracking Algorithm for Multi- Dimensional Array."
Improving Parallel Performance Intel Software College Introduction to Parallel Programming – Part 7.
1 Towards an Open Service Framework for Cloud-based Knowledge Discovery Domenico Talia ICAR-CNR & UNIVERSITY OF CALABRIA, Italy Cloud.
1 Copyright © 2010, Elsevier Inc. All rights Reserved Chapter 1 Why Parallel Computing? An Introduction to Parallel Programming Peter Pacheco. | http://slideplayer.com/slide/3231499/ |
Jeremiah Clayton "Jeremy" Davis (born February 8, 1985) is an American musician and songwriter. He was the bassist for the rock band Paramore until his departure in December 2015, subsequently becoming inactive in the music industry.
Early life
In 2002, at the age of 16, he was living in Franklin, Tennessee, where he played in a funk cover band called The Factory, where he met Hayley Williams. Through Williams, Davis met the other members, brothers Josh Farro and Zac Farro, then forming Paramore. Davis admitted that due to Zac's age (only 14 at the time) he thought people wouldn't take them seriously until he saw him play.
Paramore
Paramore was created in Franklin, Tennessee in 2004 by the two brothers Josh Farro (lead guitar/backing vocals) and Zac Farro (drums). Taylor York was also a part of the band from the very beginning, but his parents wanted him to finish school first and later returned in 2007. Later, they asked Hayley Williams (lead vocals/keyboards) to join the band, and through Hayley, Jeremy Davis (bass guitar) joined as well. In 2005, John Janick, founder of record label Fueled by Ramen, signed a contract with them. Prior to forming Paramore, the other members of what was soon to be Paramore had been "edgy about the whole female thing" of having Williams as singer, but as they were good friends, she began writing with them, and eventually became a member.
The band was eventually signed to a deal on Fueled by Ramen. The band released their first album, All We Know Is Falling, without him. For this time, Davis was replaced by John Hembree. He rejoined soon afterwards and was present on the band's second album, Riot!. Davis also plays bass on the live albums The Final Riot! and Live in the UK. The band's third album, Brand New Eyes, was released on September 29, 2009. Their fourth album, Paramore, was released in 2013. In 2014, Davis was nominated for Best Bassist at the Alternative Press Music Awards.
It was announced on December 14, 2015 that Davis would no longer be in the band, and that Paramore would continue as a duo.
In February 2016, Davis became embroiled in a legal battle with Williams and Taylor York over ownership and authorship of the songs and a portion of the royalties from Paramore's self-titled album, as well as a share of the band's touring revenue and other income. Davis claimed Varoom Whoa, the business entity that operates Paramore, was a partnership, and that Williams and York are also partners. The business denied this, claiming Williams and York are employees also (York admitting this himself also), that Davis was paid what he earned during his time in the band, and that whilst Williams is the only one signed to Atlantic Records, she shared her personal earnings from them with the band out of a sense of camaraderie.
Other work
Davis co-produced and played bass on the B.o.B. song 'Violet Vibrato', released in 2015.
Equipment
Fender Jeremy Davis custom shop model
Personal life
Prior to his current wife, Davis dated Sarah Orzechowski for multiple years. On September 30, 2011, he married British actress Kathryn Camsey. The couple's first child, Bliss Belle Buttercup Davis, was born on December 28, 2013. | https://srivideo.net/36149-jeremy-davis.html |
We gave you the highlights of last week’s pub debate here, which debated the contentious motion “This House Believes that Robots will Run (and Rule) Procurement by 2020”. Yesterday we outlined the arguments in favour of the motion, from James Marland of SAP Ariba and me. Today, the arguments against.
Jason Busch (see picture above), the founder of Spend Matters, laid into my “robot dancing” attempt, but did have some real arguments too! Firstly, he claimed that Artificial Intelligence, the central component of robotics as we define it, is not ready for real day-to-day use today (or by 2020) outside of highly targeted applications. For instance, in spend analytics, most platforms still rely on rules-based cleansing models that work. And even AI-based models still require humans behind the scenes to check on the data presented back, even once the AI is “trained”.
But even that is more advanced than AI in the purchase-to-pay area, which is even less advanced. And much of what we hear about as “robotic process automation” is from those firms who have relied on labour arbitrage in the past - if the push for AI comes from BPO firms trying to preserve margins, we’re in trouble, he claimed.
Where automation does work is in the basic, “purchasing” administrative side of the business, where much progress has been made. (That maybe contradicted his earlier point somewhat, but we’ll let it pass – there is no doubt that certain aspects of P2P have been highly automated successfully).
He also gave some good examples of where he sees that human “empathy” continuing to have real value. For instance, could a robot get to the bottom of an accounting treatment for a rebate in a supply chain finance programme (which could push it over the edge or not) in different geographies? Or work with developing local suppliers in emerging markets, including handling tricky CSR issues maybe?
Mayank Chandla from IBM then suggested that James Marland in his speech must have been talking about this granddaughter, not his daughter, which went down well with the audience. But Chandla really focused on the timing issues again more than anything. Apparently, 60% of firms around the world still print out an e-invoice if they receive one. And only 10% of the world’s commerce is “e-enabled”, so change will come but it is relatively slow.
He conceded that AI will do a lot more and replace human activities in some areas, but this will take many years, and the ‘Bots will do repetitive tasks, assisting us rather than taking over.' As these “cognitive digital brains” (which is a great phrase) do more they will augment our decision making. But even that requires much more and more structured data for the systems to be effective. Maybe one day when that situation comes to pass we will see more ubiquitous robots – but even then, he said, humans won't ever allow the robots to dis-empower us!
I guess that last point rounds off the debate nicely. I would sum up and suggest there are three key issues here, all serious ones despite the light-hearted nature of much of the debate:
- Our timing was out; 2020 is too soon, but there is no doubt “the robots” (AI, machine learning, automation) will eventually take away many tasks currently carried out by procurement. It might be 2022, 2025 or 2030, but it is coming.
- As that happens, can procurement adapt itself to different tasks and roles, with support from the robots but proving to our organisations that our human brains can still add some real value? If we can’t do that, the profession won’t survive in anything like its current form.
- How much will humans allow robots to do? Will we let them choose suppliers, agree pricing, “negotiate” with suppliers? Or will we draw a line, even if the machines are theoretically able to do such work?
Thanks again to all our speakers, our chair (David Smith, pictured here with me) and audience, the nice people at The Clarence pub in Whitehall, and particularly SAP Ariba for sponsoring the event. Who knows, we may have another debate in the Autumn! | https://spendmatters.com/uk/robots-will-run-procurement-pub-debate-arguments-part-2/ |
A Gluten-free, Dairy-free Whole Food Recipe
THERE ARE MANY RECIPES for a pot roast, but I chose this one based on its simplicity of ingredients and its adaptability to cooking methods, especially the crockpot. Make this delicious meal while you’re at work or sleeping! If you prefer, fresh herbs can be substituted for dry. As a point of reference, substitute 1 TBS of fresh herb for 1 tsp of dried herb.
Ingredients
1 3-5-pound grass-fed chuck roast
2 TBS olive oil
1 large onion, chopped
4 large carrots, unpeeled, chopped
5 medium potatoes, chopped
1 cup red wine, optional
4-6 cups beef broth
2 tsp dried rosemary
2 tsp dried thyme
Sea salt & pepper
Directions
1. Generously salt and pepper the roast.
2. Heat olive oil in large skillet over medium-high heat. Season the roast. Mix the rosemary and thyme and sprinkle on one side of the roast. When the oil is hot, brown the seasoned side. Repeat by sprinkling herbs on the other side and then brown all edges, approximately 2-4 minutes on each side.
3. Once the meat is browned, place in the crockpot. Pour the red wine in the hot pan and scrape the bottom with a whisk and add contents to crockpot.
4. Chop the vegetables into large pieces and add to crockpot, then pour in enough broth to cover the meat. You can choose to pour off a little liquid once it’s done, if you’d like.
5. Cover and simmer meat on low for at least 8 hours. The roast is ready when it’s fall-apart tender. Serves 8-10 generously. | http://www.edgemagazine.net/2014/02/recipe/ |
Aims: To clarify the molecular biological difference between ovarian clear cell carcinoma and other histological subtypes carcinomas by comparing the copy number variants.
Methods: Gene Chip Human Mapping 250K Nsp Arrays were used for detecting the signal intensity of about 260 thousands SNPs and intensities of ovarian clear cell carcinoma were compared to the ones of non-carcinoma.
Participants/Materials: 57 ovarian carcinoma patients (ovarian cancer cells and peripheral blood cells: total 114 samples)
|Data Set ID||Type of Data||Criteria||Release Date|
|JGAS00000000022||Copy Number Variations in cancer genome||Controlled-Access (Type I)||2015/04/21|
* Data users need to apply the Form 2 (Application Form for Using NBDC Human Data) to reach the Controlled Access Data. Learn more
MOLECULAR DATA
|Participants/Materials:||
|
Surgical samples were obtained from 57 patients
(31 clear cell carcinomas, 14 serous adenocarcinomas, and 12 endometrioid adenocarcinomas)
|Targets||genome wide CNVs|
|Target Loci for Capture Methods||
|
-
|Platform||Affymetrix [GeneChip Human Mapping 250K Nsp Array]|
|Source||gDNAs extracted from ovarian cancer cells and peripheral blood cells|
|Cell Lines||-|
|Library Construction (kit name)||GeneChip Human Mapping 250K Nsp Array|
|Algorithm for detecting CNVs (software)||genome imbalance map (GIM) algorithm (doi:10.1016/j.bbrc.2005.06.040)|
|CNV number||262,264 CNVs|
|Japanese Genotype-phenotype Archive Data set ID|
|Total Data Volume||17.5 GB|
|Comments (Policies)|
DATA PROVIDER
Principal Investigator: Katsutoshi Oda
Affiliation: Department of Obstetrics and Gynecology, Faculty of Medicine, The University of Tokyo
Project / Group Name: -
Funds / Grants (Research Project Number): | https://humandbs.biosciencedbc.jp/en/hum0030-v1 |
The fossilised remains of giant lions and other ferocious monsters that once stalked the earth have been discovered in the Australian outback, scientists announced on Tuesday.
A wombat – a burrowing, pig-like marsupial that carries its young in a pouch – the size of a mini car and the world’s largest kangaroo were among the creatures unearthed in caves on the Nullarbor Plain, the vast desert stretching from Kalgoorlie in Western Australia to South Australia’s Gawler Ranges.
Some of the creatures are believed to be species never previously discovered. | https://www.impactlab.com/2002/07/31/tomb-of-monsters-found-in-australia/ |
Choose one (1) public corporation in an industry with which you are familiar. Research the company on its own Website, the public filings on the Securities and Exchange Commission EDGAR database (http://www.sec.gov/edgar.shtml), in the University's online databases, and any other sources you can find. The annual report will often provide insights that can help address some of these questions.
Write a four to six (4-6) page paper in which you:
- Assess how globalization and technology changes have impacted the corporation you researched.(What corporation did you pick? How does globalization impact the corporation and how does technology changes impact the corporation?)
- Apply the industrial organization model and the resource-based model to determine how your corporation could earn above-average returns. (Apply both models not just the one that best describes the corporation)
- Assess how the vision statement and mission statement of the corporation influence its overall success. (Give me the vision and mission statements and describe how they influence the success of the corporation.)
- Evaluate how each category of stakeholder impacts the overall success of this corporation. ( List all the stakeholders and tell me how each one impacts overall success)
- Use at least two (2) quality references. Note: Wikipedia and other Websites do not quality as academic resources.
CANNOT USE ANY OF THESE COMPANIES:
Wal-Mart
Starbucks
Exxon Mobil
Coca-Cola
Pepsi
Best Buy
Apple
Samsung
Amazon
Your assignment must follow these formatting requirements:
- Be typed, double spaced, using Times New Roman font (size 12), with one-inch margins on all sides; citations and references must follow APA or school-specific format. Check with your professor for any additional instructions.
- Include a cover page containing the title of the assignment, the student’s name, the professor’s name, the course title, and the date. The cover page and the reference page are not included in the required assignment page length.
The specific course learning outcomes associated with this assignment are:
- Determine ways in which the vision, mission, and stakeholders of a firm impact that firm’s overall success.
- Use technology and information resources to research issues in business administration.
- Write clearly and concisely about business administration using proper writing mechanics.
Tutor Answer
Attached.
The disorder for this paper is major depressive
disorder, recurrent in full remission.
The DSM code for this disorder is 296.36.
Depression generally refers to a mental disorder that is
primarily characterized by a serious mood disorder.
It results in symptoms that affect how an individual
think, feel, or perform daily chores.
The symptoms of depression vary from mild to severe.
When major depressive disorder is diagnosed in a
person, additional features of the depression are
indicated.
Presence of two or more major depressive episodes
The following are examples of major depressive
episodes;
A feeling of depression throughout the day and every
day. For instance, on feels empty or say or even
presence of irritable mood.
Noticeable loss of interest in almost all activities and
pleasure.
Substantive weight loss or weight gain or a decline in
appetite.
Insomnia
Loss of energy or fatigue
Recurrent suicidal thoughts.
Major depressive disorder may start at any age, but
the average age at onset is at the mid-20s.
Recent research study shows that the age at onset
is declining for those born more lately.
The course of major depressive disorder, recurrent
in full remission, is inconsistent.
There are some individuals with separated
episodes which are isolated for long without any
symptoms or features of depression.
However, there are some who have increasing
recurrent episodes as they continue to grow older.
With major depressive
disorder, recurrent in full
remission, the depressive
episodes are likely to end
completely.
Episodes of this mental health
disorder usually trail a
rigorous psychosocial situation
like a divorce.
In fact, researchers argue that
psychosocial episodes may
play a critical part in the
occurrence of the first or
subsequent episodes of this
mental health disorder.
Indeed, major depressive disorder, recurrent in full
remission can result in cognitive impairment.
In this case, an individual with this disorder is likely to
have difficulties in performance.
In recent years, many pieces of research cite that
individuals who suffer from all forms of major
depression exhibit some cognitive instability like
impairment in working memory and in paying
attention.
Additionally, patients with this type of major
depressive disorder also exhibit impaired verbal
learning.
In addition to cognitive impairment, major
depressive disorder, recurrent in full remission can
also result in complications.
Typically, major depressive disorder is a very
serious disorder that can take disastrous toll on an
individual.
In fact, major depression progresses and becomes
worse if not treated effectively and promptly.
Some of the
complications
associated this mental
health disorder include
but not limited to;
Drug misuse
Weight gain which can
result in diabetes and
heart disease
Panic disorder
Self-mutilation
Suicidal thoughts
Early death due to
medical complications
The following are some of the predisposing factors that
can result in major depressive disorder, recurrent in
full remission;
Family history-... | https://www.studypool.com/discuss/4071929/Assignment-1-Strategic-Management-and-Strategic-Competitiveness-business-finance-homework-help |
The narrator describes how Billy looked even younger than his age, with an almost feminine face. His transition from a merchant ship to a large warship was like that of a "rustic beauty" brought from the countryside to compete with "the highborn dames of the court." But Billy was not aware of how out of place he was, and was not aware of the "ambiguous smile" he provoked among some sailors.
The strong male camaraderie between Melville's sailors, centered as it is around the beauty of Billy, is so intense that it approaches a kind of erotic attachment, as Billy is repeatedly compared to beautiful women.
The narrator compares Billy to classical Greek sculpture, though he notes there was another quality in his appearance. An officer on the ship once asked his place of birth and father, and Billy said he didn't know—he was found in a basket on a doorstep in Bristol. The narrator claims that Billy clearly had a noble lineage, as his appearance proved.
The comparison to ancient statuary emphasizes Billy's beauty and associates him with a glorious, idealized innocent ancient past. The narrator (who should not be confused with Melville, who surely has more complicated beliefs) believes that Billy's appearance is proof of his noble character.
The narrator continues to describe Billy, who was intelligent but illiterate. Not at all self-conscious, he was an "upright barbarian," like Adam in the garden of Eden before the Fall. Indeed, the narrator elaborates, good character often appears naturally in men, not from the influence of civilization or convention.
According to the narrator, Billy had "masculine beauty" but did have one flaw, just like "the beautiful woman in one of Hawthorne's minor tales." In moments of peril, he would sometimes stutter. The narrator says that this flaw should prove that Billy is a realistic hero, not a figure from some fantastical romance.
The narrator stresses that his story is true, as proven by Billy's one flaw. This insistence on truthfulness has an interesting affect. On one hand, it emphasizes the fact that the story isn't true—it's a fiction made up by Melville! But it also separates Melville from his narrator. Melville made up the story, but the narrator lives in the same world as the characters Melville has made up. The narrator is a character in the story who exists at the same level as the characters, and this makes the narrator's story of these true events unreliable, because why should we assume that the narrator absolutely knows what happened any more than anyone else does. The narrator is creating a coherent narrative based on his speculations regarding these "true" events (just like a historian does). And that is the "history" we are reading. And you as reader can take the narrator's story at face value. But you can also question the narrator's accuracy or knowledge, just as historians disagree. That the story can exist on these multiple levels of accuracy and unreliability at the same time is part of Melville's triumph in writing it. | https://www.litcharts.com/lit/billy-budd/chapter-2 |
First Online:
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Abstract
The proposed Advance Region Quantitative Approach (ARQA) method is used for Breast multi-tumor region segmentation which helps in decease detection and also detects the multi-tumors in different scenarios. The present approach uses the existing preprocessing methods and filters for effectual extraction and analysis of MRI images. The mass regions are well segmented and further classified as malignant disease by computing texture features based on vision gray-level co-occurrence matrices (VGCMs) and logistic regression method. The proposed algorithm is an easy approach for doctors and physicians to provide easy option for medical image analysis. | https://link.springer.com/chapter/10.1007/978-981-13-0617-4_1?error=cookies_not_supported&code=9fb34fe0-f411-4293-b2b3-6504ec999e4e |
Intent:
We passionately believe that teaching children to read and write independently and as quickly as possible is one of the core purposes of a primary school. These fundamental skills not only hold the keys to the rest of the curriculum but also have a huge impact on children’s self-esteem and future life chances.
We believe that reading is the key to all learning and so the impact of our reading curriculum goes beyond and is embedded across the entire curriculum for our children.
We strive for enthusiastic and motivated readers that gain confidence in reading a wide variety of genres and text types, encouraging a love of literature and an enjoyment of reading for pleasure.
Implementation:
We teach children to read effectively every day across the foundation stage through to key stage 1 using the ‘Letters and Sounds’ programme which provides a synthetic approach to the teaching of phonics across a structured progression of 6 phases.
Pupils who are still struggling to decode and spell are identified quickly and differentiated sessions are targeted ensuring pupils continue to make good progress.
Pupils go onto deepen their phonics skills through practise in reading books, their literacy work and across the whole wider curriculum, ensuring that phonic knowledge and skills are consistently practiced and secured. Classrooms are well resourced with phonics walls and phonics tools kits which are readily available empowering pupils to independently make correct spelling choices.
We strongly believe that working in partnership with parents is key to unlocking success. We therefore also take parents on a phonics journey, offering a weekly phonics workshop where they developed key skills together which can be then shared at home.
Pupils are given the opportunity to listen to an extensive array of high quality books during ‘story time’ at the end of each school day across the whole school developing a shared love, passion and enjoyment of reading.
Drama and role-play contribute to the quality of pupils’ learning by providing opportunities for pupils to develop and order their ideas through play and trying out language they have listened to.
Impact:
Through the teaching of systematic phonics, our aim is for children to become fluent readers by the end of Key Stage One. In addition to this we ensure our children are enthusiastic and motivated readers who are inspired by literature and read for pleasure.
Throughout the teaching of Phonics, we are able to measure attainment using the Key Stage One national assessments, along with the information provided by the Phonics Screening check in Year One.
The Curriculum Leader for Phonics and Early Reading is:
Mrs Christa Mitchinson
Phonics Workshops
At St-Swithun’s we are proud to promote a close partnership with our parents as we know that this has a positive impact on children’s learning and the speed at which they progress. Within the foundation unit we offer weekly parent sessions where you are invited to come and join your child within their learning environment. Each week we will have a learning focus that we would like to share with you so that you can go away with the knowledge and skills to continue and extend this learning at home.
Phase 1 Phonic Workshop Planner
Our daily ‘letters and sound’ programme allows all children to explore sounds and go onto to read effectively. Discrete sessions are used as a starting point and again are embedded into the rich, playful environment which allows children to deepen their understanding apply their learning. | https://www.st-swithuns.notts.sch.uk/phonics-and-early-reading-1/ |
Dr. Sonja first became passionate about dentistry while attending Sheldon High School, when she assisted her father, Dr. William B. Sproul, on a dental mission trip to Belize. Her interest in dentistry only grew throughout college at Seattle Pacific University, when she had the opportunity to travel to Africa as a dental assistant, and provided dental services to the people of Kenya.
Although she attended Ostrow School of Dentistry of USC, Dr. Sonja remains a “Duck” at heart! During dental school Dr. Sonja regularly volunteered for mobile clinics, which served children in the surrounding Los Angeles areas. She was also able to provide dental services on a school humanitarian trip to Honduras. Dr. Sonja Sproul graduated with Dean’s list honors and faculty nominated awards for her leadership and excellence in clinical dentistry.
While Dr. Sproul is pleased to be taking over her father’s family dental practice, she also enjoyed serving as a dentist in the Army National Guard from 2009-2018. In 2013, Dr. Sonja received The Army Commendation Medal for her service and support. “One of the most rewarding aspects of being a dentist,” says Dr. Sonja, “is that I get to build long-term relationships with my patients and their families, while offering high-quality, personalized dental care.” Many patients have commented on her gentle touch and calm demeanor, which facilitates the office’s inviting atmosphere.
Dr. Sonja served as an Executive Board member and President for the Lane County Dental Society for five years and is a member of the Exploring Excellence Study Club. In addition to staying up to date with the latest dental technology, she continues to provide dental services around the world, as her recent trip was spent over Christmas in Micronesia delivering free dental care to the people of Chuuk.
Along with her passion for travel and spending time with her husband, Dr. Sonja enjoys skiing, hiking, scuba diving, and biking. | https://ssprouldentistry.com/meet-eugene-dentist-dr-sonja-sproul/ |
Pitching development at CBC centers around elbow and shoulder health. Keeping our pitchers healthy is at the forefront of all programming and mechanical adjustments that are made with our athletes. By first completing a movement assessment we are better able to see what each individual pitcher is capable of. Discerning the difference between physical (movement) and mechanical (technique) problems during the assessment is paramount to ensuring we provide the most effective form of instruction. After the initial assessment our staff will be hard at work reviewing injury history, slow-motion video, velocity, command, spin characteristics, 4D data, and Motus diagnostics to develop a plan to minimize injury, increase velocity and pitchability. Developing our pitchers to better help them perform in games is of the upmost importance to our team here at CBC.
The Lab
Some of the technology that we currently use here at CBC includes: right view pro video analysis software, and Motus workload tracker. Each session pitchers will be taken through their comprehensive warm up, mechanical lead in drills, and their drill specific work. | https://chapmanbaseball.com/pitching/ |
Aggressive behaviors among animals, which may be within a species or between two different species, and may be a form of territoriality, dominance or mating strategy.
This is a type of genetic inheritance ; a person who carries the gene on one allele will express (experience effects from) that gene. An autosomal dominant gene can be inherited from a single affected parent; both sons and daughters have an equal chance of inheriting the gene. | http://www.bioscience.ws/dictionary/index.shtml?search=dominance |
Plasmonic nanoparticles are discrete metallic nanoparticles that have unique optical properties, and are increasingly being incorporated into commercial products and technologies. These technologies, which span fields ranging from photovoltaics to biological and chemical sensors, take advantage of the extraordinary efficiency of gold and silver plasmonic nanoparticles at absorbing and scattering light. Additionally, unlike most dyes and pigments, plasmonic nanoparticles have a color that depends on their size and shape and can be tuned to optimize performance for individual applications without changing the chemical composition of the material. You can find more information about plasmonic nanoparticles in our Knowledge Base. | https://nanocomposix.eu/pages/plasmonic-nanoparticles |
The UC3M groups that actively collaborate in the UC3M Sener chair and the contact person are listed below:
• Group of the Aerospace Engineering department
The Department of Bioengineering and Aerospace Engineering is primarily responsible for the Degree in Aerospace Engineering, the Master’s Degree in Aeronautical Engineering, and the Master’s Degree in Space Engineering. The aforementioned research groups have a strong international character and regularly participate in research projects funded by the Government of Spain and the Community of Madrid, the European Commission and ESA.
Relevant projects are Cheops, Minotor, Nanostar, Prometeo, MFoC, MartínLara and E.T.PACK. In Space, the groups have capabilities in mission analysis, simulation of plasma propellers, space debris, and space ties, among others.
Contact: Mario Merino. [email protected]
• Computer Architecture, Communications and Systems Group (ARCOS).
ARCOS is a research group that currently conducts research in several areas of HPC.
Our research activities are oriented to the development of new software for parallel and large-scale distributed systems. These activities cover the development and optimization of parallel applications
and distributed, in real time, reliable designs and high-performance computing, including cross-layer optimizations of HPC Storage I / O Stack, parallel file systems, acceleration of scientific workflow I / O, E-tuning Parallel / S based on machine learning,
dynamic monitoring of HPC infrastructures, convergence of HPC and Bigdata software stacks, and elasticity of resource allocation in HPC and clouds.
In addition, ARCOS researchers are leading several European projects, such as COST Action IC1305 entitled “Network for ultra-sustainable sustainable computing” (NESUS), with more than 70 institutions from 40 countries around the world, or the REPARA and RePhrase projects that address the programmability for parallel systems with special attention to heterogeneous architectures.
Contact: Jesús Carretero. [email protected]
• Communications Group of the Department of Signal Theory and Communications.
The Communications Group of the Dept. of Signal Theory and Communications of the Carlos III University of Madrid led by Ana García Armada, brings high experience in the analysis, design and evaluation of communications systems, fixed and mobile, as well as in the development of signal processing techniques to improve their performance, which allows us to offer alternatives to optimize the applications and services that are supported in them.
Main lines of research are: Multi-antenna systems (MIMO and MIMO Massive). OFDM multi-carrier modulation and variants (for NB-IoT, 5G, …). Analysis, detection and inhibition of signals.
Coordinated transmission and cancellation of interference (Small cells, …). Mechanisms of random access and radio resource management (IoT, Multicast, Broadcast).
We work on the design and application of the techniques prior to: wireless local / metropolitan area networks (WLAN, WMAN), next generation mobile systems, satellite communications systems and communications with visible light (VLC, LiFi).
Contact: Víctor Gil. [email protected]
• Optoelectronics and Laser Technology Group.
Dean research group of the Department of Electronic Technology, consisting of researchers with multidisciplinary training, from Physical Sciences to Engineering of the Industrial and Telecommunications branches. This group has coordinated three European projects (FP5 MONOPLA, FP7 iPHOS and H2020 TERAmeasure), three research initiation networks (Marie Slodowska-Curie ITN, FALCON, MITEPHO and OILTEBIA) and participated as a partner in several other projects (ePIXnet, MIRIFISENS, TRIPOD).
He currently focuses his research activity developing optoelectronic systems. On the one hand, directed by Prof. Horacio Lamela, he highlights the development of biomedicine imaging, being pioneers in the development of the photo-acoustic technique, based on short pulses of light. On the other, directed by Prof. Guillermo Carpintero, the development of integrated photonic circuits stands out, being pioneers in the generation of high frequency signals (in millimeter and Terahertz range) for wireless broadband communications and sensors.
Contact: [email protected]
• Grupo de Diseño Microelectrónico y Aplicaciones (DMA) del Departamento de Tecnología Electrónica
The Microelectronic Design and Applications Group (DMA) has a long history in the design of integrated circuits, FPGAs and SoCs (System on Chip) for different applications, among which space applications and hardware acceleration stand out. Its members have participated in 11 European projects and numerous contracts with companies and institutions, both national and international. In Space it is a reference group in the study and mitigation of the effects of radiation on digital circuits.
In this field, he regularly collaborates with the main institutions, such as ESA (European Space Agency), INTA (National Institute of Aerospace Technology), CNA (National Accelerator Center) and LANL (Los Alamos National Laboratory). He has also carried out several circuit design projects for Espacio, among which his participation in the Rosetta mission stands out. | https://catedra-uc3m-sener.com/grupos-de-investigacion-de-la-uc3m-3en/ |
A commuter town is a populated area with residents who normally work elsewhere, but in which they live, eat and sleep. The term additionally implies a community that has little commercial or industrial activity beyond a small amount of locally oriented retail business.
A "commuter town" may be called by many other terms: "exurb" (short for "extra-urban"), "bedroom community" (Canada and northeastern U.S.), "bedroom town", "bedroom suburb" (US), "dormitory town", "dormitory suburb", or less commonly a "dormitory village" (Britain/Commonwealth/Ireland).[citation needed] In Japan, it may be referred to with the wasei-eigo coinage "bed town" (ベッドタウン,beddotaun).[1]
Camarillo, California, a typical U.S. bedroom community made up almost entirely of homes, schools and retail outlets
Suburbs and commuter towns often coincide, but are not synonymous. Similar to college town, resort town and mill town, the term commuter town describes the municipality's predominant economic function. A suburb, in contrast, is a community of lesser size, density, political power and/or commerce comparative to a nearby community that is usually of greater economic importance. A town's economic function may change, for example when improved transport brings commuters to industrial suburbs or railway towns in search of suburban living. Some suburbs, for example Teterboro, New Jersey and Emeryville, California, remained industrial when they became surrounded by commuter towns; many commuters work in such industrial suburbs but few reside in them; hence, they are not commuter towns.
As a general rule, suburbs are developed in areas adjacent to a main employment center, such as a town or a city, but may or may not have many jobs locally, whereas bedroom communities have few local businesses, and most residents who have jobs commute to employment centers some distance away. Commuter towns may be in rural or semi-rural areas, with a ring of green space separating them from the larger city or town. Where urban sprawl and conurbation have erased clear lines among towns and cities in large metropolitan areas, this is not the case.
Commuter towns can arise for a number of different reasons. Sometimes, as in Sleepy Hollow, New York or Tiburon, California, a town loses its main source of employment, leaving its residents to seek work elsewhere. In other cases, a pleasant small town, such as Warwick, New York, over time attracts more residents but not large businesses to employ them, requiring denizens to commute to employment centers. Another cause, particularly relevant in the American South and West, is the rapid growth of once-small cities. Owing largely to the earlier creation of the Interstate Highway System, the greatest growth was seen by the sprawling metropolitan areas of these cities. As a result, many small cities[which?] were absorbed into the suburbs of these larger cities.
In certain major European cities, such as Berlin and London,[citation needed] commuter towns were founded in response to bomb damage sustained during World War II. Residents were relocated to semi-rural areas within a 50-mile (80 km) radius, firstly because much inner city housing had been destroyed, and secondly in order to stimulate development away from cities as the industrial infrastructure shifted from rail to road. Around London, several towns – such as Basildon, Crawley, Harlow, and Stevenage – were built for this purpose by the Commission for New Towns.[citation needed]
Where commuters are wealthier and small town housing markets weaker than city housing markets, the development of a bedroom community may raise local housing prices and attract upscale service businesses in a process akin to gentrification. Long-time residents may be displaced by new commuter residents due to rising house prices. This can also be influenced by zoning restrictions in urbanized areas that prevent the construction of suitably cheap housing closer to places of employment.
In the United States, it is common for commuter towns to create disparities in municipal tax rates. When a commuter town collects few business taxes, residents must pay the brunt of the public operating budget in higher property or income taxes. Such municipalities may scramble to encourage commercial growth once an established residential base has been reached.
A 2014 study by the British Office for National Statistics found that commuting also affects wellbeing. Commuters are more likely to be anxious, dissatisfied and have the sense that their daily activities lack meaning than those who don’t have to travel to work even if they are paid more.[3]
In Belgium, the development of traditional rural Flemish towns surrounding Brussels into commuter towns is causing major language tensions, as most of the newcoming commuters are French-speaking or even international English-speaking families with no attachment to the Flemish roots. The Flemish movement in the Brussels-Halle-Vilvoorde area, with demands such as the strict enforcement of the Dutch language (restaurants with bilingual menus have been assaulted by activists, etc.) can be analyzed as a reaction against gentrification caused by the arrival of those wealthier non-Dutch speakers working in international companies, national administration or the European Parliament.
The word exurb (that is, "extra-urban") was coined by Auguste Comte Spectorsky, in his 1955 book The Exurbanites, to describe the ring of prosperous communities beyond the suburbs that are commuter towns for an urban area.[4] Most exurbs serve as commuter towns, but most commuter towns are not exurban.
Exurbs vary in wealth and education level. In the United States, exurban areas typically have much higher college education levels than closer-in suburbs, though this is not necessarily the case in other countries. They also typically have average incomes much higher than nearby rural counties, and some have some of the highest median household incomes in their respective metropolitan area. However, depending on local circumstances, some exurbs have higher poverty levels than suburbs nearer the city.
Today's exurbs are composed of small neighborhoods in otherwise lightly developed areas, towns, and (comparatively) small cities. Some lie in the outer suburbs of an urbanized area, but a few miles of rural, wooded, or agricultural land separates many exurbs from the suburbs. Exurbs may have originated independently of the major city to which many residents commute. Most consist almost exclusively of commuters and lack the historical and cultural traditions of more established cities. Many early 20th century exurbs were organized on the principles of the garden city movement.
Many suburbs within a metropolitan city proper enjoyed their greatest growth in the post-World War II period, after which growth slowed for several decades; however, since the 1990s extensive development has occurred outside of cities. There have also been significant growth differences between inside and outside metro boundaries; many developments typical of exurbs, such as the proliferation of big box retailers, lie just on the outside, due to older suburbs' being restricted by inner-city land-use politics while communities outside are free to develop and grow.
"They begin as embryonic subdivisions of a few hundred homes at the far edge of beyond, surrounded by scrub. Then, they grow – first gradually, but soon with explosive force – attracting stores, creating jobs and struggling to keep pace with the need for more schools, more roads, more everything. And eventually, when no more land is available and home prices have skyrocketed, the whole cycle starts again, another 15 minutes down the turnpike."
Others argue that exurban environments, such as those that have emerged in Oregon over the last 40 years as a result of the state's unique land use laws, have helped to protect local agriculture and local businesses by creating strict urban growth boundaries that encourage greater population densities in centralized towns, while slowing or greatly reducing urban and suburban sprawl into agricultural and timber land.[9]
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Tri Ocean Textile aims to bring the highest of quality and innovation in our products, through resource conservation, reduced environmental impact, creating a low resource consumption and lower emissions of water, in order to give our customers an environmental friendly, yet competitive advantage through superior products and value. We thrive to be the world’s leading textile industry.
Vision
Our vision is to continuously advance in higher technology, newer designs, product quality and environmental friendliness. Our customers deserve no less.
Environmental Policy
Policy: Aim to reduce energy consumption and maintain company’s operating under environment health and safety of all personnel. It is our consistent goal to make efforts to implement the environmental management system, to ensure that all aspects of the company’s negative impact on the environment is lowered down to a minimum. We hereby make the following commitments:
1. Have a clear understanding of the relevant environmental legislation and to confirm our company are in compliance with company regulatory minimum requirements and make improvements where feasible.
2. Through recognition policies regularly with the examination and supervision of the implementation and take the relevant remedial measures if the situation does not meet requirements.
3. To ensure that all employees in the course of their work behavior can meet the environmental policy and encourage our suppliers, outsourcings, plant and contractors together to join with the implementation of our company’s environmental policies.
4. The production process should top prioritize on non-polluting manufacturing technologies, control our waste at a minimum, reuse and recycle to reduce our energy consumption.
5. Encourage employees to participate in environmental activities to promote environmental awareness and participation in local community activities from time to time planning for local communities to make a positive environmental contribution. | http://triocean.com.tw/ |
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May 10, 2011
In 2008 I began work with a number of friends on a conceptual model of a "learning architecture" that would enable a whole generation of connective technologies, which could be used for augmented reality and shared experiences. Central to this is the idea that each of us constructs our understanding of the world in terms of people, places, and shared experiences. Sounds cool, right? Well, a challenge I constantly have is articulating what this means in language that captivates the imagination of broad audiences.
Thankfully, Douglas Thomas and John Seely Brown have captured the very essence of what it means to learn and play in a world that is constantly changing. If you're only going to commit to reading five books in 2011, put A New Culture of Learning (2011, CreateSpace) at the top no matter what you do for a living; whether you have kids or not.
Many organizations (including the ones I work with) are focused on creating a world such as Thomas and Brown describe. It's worth it to you to have a picture in your mind's eye of what will be mainstream learning over the next 30 years.
One of the most important shifts suggested in A New Culture of Learning concerns how we think about our presence. The Internet, our friends, our moms—all seem to have an endless supply of horror stories about privacy. Thomas and Brown address this as "Personal" combined with the "Collective." Here is an excerpt from the book:
"The personal is the basis for an individual's notions of who she is (identity) and what she can do (agency). It is not necessarily private, though it may be, and it does not exist in a vacuum� The notion of 'the public' is singular, and it implies a sense of both scale and anonymity. The notion of a collective is narrower. Collectives are made up of people who generally share values and beliefs about the world and their place in it, who value participation over belonging and who engage in a set of shared practices�"The balance of personal with collective is important, as is the distinction between collectives and (enter a popular buzzword) communities. Thomas and Brown assert that while communities can be passive, collectives can't. Their distinction, in terms of learning, is pretty straightforward: "In communities, people learn in order to belong. In a collective, people belong in order to learn." I find the description the authors give of learning with the collective very similar to self-organizing principles described by Dee Hock in One of Many.
Another gem in A New Culture of Learning deals with another buzzword you've no doubt heard: context. Shifting what questions to where questions don't just underscore the importance of context as a critical dimension to this new culture of learning; it illuminates the need to make and the need to play with knowledge. Many of you are no doubt using LinkedIn, Facebook and Twitter to engage with other professionals. Some of you might also have access to social networks and collaboration spaces in your workplace. Thomas and Brown write, "Where one chooses to post, where one links to, or where one is linked from does not just serve as a locus for finding content. It becomes part of the content itself�. Through the process of making, we are also learning how to craft context so that it carries more of the message, which helps solve many of the issues of information overload."
Think about that last part for a moment. Do you post your blog at certain times of a day, even on certain days, to attract more of an audience? Have you begun to sense that some of your LinkedIn groups are more responsive to certain types of questions than others, and have you started reaching out to those groups both to share what you know, and to seek their counsel? This practice—this know-how—is the very basis of evaluation and judgment presented in A New Culture of Learning .
At a very readable 117 pages, take this book to your favorite coffee shop in the morning and enjoy it from cover to cover by dinner-time. I suggest having a highlighter and a pen with you to write in the margins as you go. You should start applying much of what's in this book to your life and your organization now. Schedule yourself out of another endless day of status meetings and get your learn on. "They" will thank you for it.
Aaron is the Chief Learning Officer of his consultancy, Problem Solutions. In this capacity, Aaron is the Community Manager for Advanced Distributed Learning (ADL), an applied research and development initiative through the U.S. Department of Defense, innovating a next generation of advanced, broad application learning technologies. He blogs at aaronsilvers.com and can be found on Twitter as @aaronesilvers.
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According to a story from Parkinson’s News Today, a recent study may have discovered the origins of chronic pain and damage to the sensory nerves as found in some cases of Parkinson’s disease. The study attributes changes to levels of glucocerebroside and anandamide as the culprit. The researchers determined that glucocerebroside was unusually high in patients whereas anandamide was unusually low.
About Parkinson’s Disease
Parkinson’s disease is a type of long term, progressive, degenerative illness that affects the central nervous system. Symptoms tend to develop over a period of years and primarily affect the movement ability and mental state of the patient. The cause of Parkinson’s disease remains a mystery, although there are a number of risk factors that have been identified. These factors include head injuries, pesticide exposure, and certain genetic variants and mutations. About 15 percent of patients have a close relative with the disease, suggesting some genetic connection. Symptoms include slowed movements, poor coordination, trouble walking, shaking, stiffness, abnormal posture, depression, anxiety, inhibited thinking, hallucinations, and dementia. Treatment may involve a number of medications, rehabilitation, and surgical operations. Survival rate varies, but most patients survive around a decade after getting diagnosed. To learn more about Parkinson’s disease, click here.
Chronic Pain and Sensory Loss
Around two thirds of patients living with this disease report dealing with chronic pain, making it the primary non-motor symptom attributed to it. In some cases, medication can help resolve this symptom. The study involved a collaboration between researchers in Israel and Germany. The study involved two participating groups: the first group compared 128 Parkinson’s disease patients and 224 healthy volunteers. The second compared 50 other patients to 50 healthy volunteers.
Findings
The first group of patients reported pain 66 percent of the time; the second group did 74 percent of the time. Patient reported sensory loss included loss of temperature (hot vs cold) sensation and loss of vibration; these mostly affected the feet. While almost all patients had abnormally high glucocerebroside and unusually low anandamide, this disparity was especially pronounced in patients that reported the highest levels of pain and sensory dysfunction. Interestingly, in those with nerve pain, this disparity was also higher than average. These patients were also more likely to report involuntary movements.
Another important factor to note is that not all patients with sensory problems reported chronic pain, meaning that this symptom can appear independently.
While more research is necessary, the findings suggest some link between changes to the levels of these fatty molecules and chronic pain/sensory dysfunction. The authors suggest that cannabis-based treatments could potentially normalize anandamide levels and therapies used to treat Gaucher disease could stabilize glucocerebroside.
Learn more about this study, published in the journal Movement Disorders, here. | https://patientworthy.com/2020/08/06/possible-link-parkinsons-disease-pain-nerve-damage/ |
The Listings tab will outline some at-a-glance performance metrics for a given time range, such as the top-selling listings by quantity and by revenue.
Items: The total number of listing items fulfilled within the selected date range.
Top Seller (Quantity): The listing item that has been fulfilled the most by quantity within the selected date range.
Top Seller (Revenue): The listing item that has been fulfilled for the highest total sales revenue within the selected date range.
Name: The name of the listing as entered on its sales channel.
Quantity: The total quantity of the listing fulfilled within the selected date range.
Revenue: The total sales revenue grossed by fulfilling the listing within the selected date range. | http://help.skulabs.com/insights/listing-insights |
Information in this document applies to any platform.
Goal
The Instrumentation component of the WebLogic Diagnostics Framework (WLDF) provides a mechanism for adding diagnostic code to WebLogic Server instances and the applications running on them.
This document addresses some questions when trying to setup WebLogic WLDF instrumentation on a domain with a goal to see the application performance metrics at the transaction level.
Questions:
1. When we configure WLDF module with instrumentation enabled and also instrumentation enabled at the application configuration lever under deployments, where will the performance metrics stored in the backed? Can we read the data in the backed system?
2. Do I have to update the application every time when I make the changes to application instrumentation configuration? or is there any way I can do it without updating the application to avoid app downtime?
3. Can we export and erase the request performance data during the server run time? How is the retention of data handled when this feature is enabled?
4. What is the impact of having instrumentation enabled all the time and if any overhead is added on server?
5. When instrumentation is enabled does it write any logging to server logs?
6. We were trying the THROTTLE feature and can this be enabled/disabled during runtime without redeploying app ?
7. Why do we need to have a plan.xml attached to application when enabling instrumentation? Can this same configuration exported to other applications on other domains.
We are looking for enabling and disabling instrumentation on-demand as per application performance issues rises. And it will be helpful to know where that data is stored and if that data can be exported to a readable format for further analysis.
Solution
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The OGM team is based at our two sites in Oxford and South Wales.
PAUL WIGHTMAN
Paul Wightman is Managing Director (MD) at OGM and Chairman for OGM Holdings Group. He has been with OGM since 1993 and was appointed MD in 2001. Paul has overseen the development of the business through organic growth and acquisition.
TIM SPOONER
Tim Spooner is Quality and Business Improvement Director. As a graduate engineer and a certified Lean Six Sigma Black Belt, Tim brings over 20 years’ experience in Quality Management, including the continuous improvement of injection moulding and assembly processes, including cleanroom manufacture.
KEVIN JONES
Kevin Jones is Site Director at OGM SW. He has worked in injection moulding industry for 30 years and has vast experience in new product development, tooling and processing covering industries from electronics to automotive and off-road vehicles.
MAURICE CALLAN
Maurice Callan joined OGM in 2015 as Operations Director. He has worked in the plastics industry for over 30 years with over 15 years at Director level. A Degree qualified engineer, Executive MBA, he has a wealth of experienced in change management and continuous improvement. | https://ogm.uk.com/ourteam/ |
Gig economy workers including Uber drivers and Deliveroo couriers to be given new employment rights
Gig economy workers including Uber drivers and Deliveroo couriers will be given new employment rights across the European Union, after lawmakers approved the new rules. EU member states will have three years to implement the new rules which include putting in place minimum rights for freelancer workers, such as more regular working hours and compensation for cancelled work.
Gig economy workers have previously been treated as independent contractors instead of employees in some countries and so have not been granted the same employment rights. As part of the new ruling, which was approved by the European Parliament on Tuesday, those working within the so called "gig economy" will now have to be told about their pay on their first day, and will also be able to work for other companies and refuse assignments outside of normal working hours. The new rules is thought to be applied to around three million individuals, who the European Parliament said are amongst some of “the most vulnerable employees."
The UK will only be obliged to implement the law if it is still a member state of the EU three years after the new regulation enters into force.
But similar rules are already planned for the UK, following a review into modern workplace practices by Matthew Taylor, a former advisor to Tony Blair. The EU law will require employers to inform all workers about "essential aspects" of their employment on their first day, including: - Description of their duties
- Starting date and pay information - Indication of what a standard working day is, or reference hours
- Right to compensation for late cancelling of work
- Only one probationary period, lasting a maximum of six months
-Allow employees to have other jobs, banning "exclusivity clauses"
The new rules should apply to all those who work at least three hours a week, averaged over four weeks - at least three million people, though it is a growing category of workers. The rules will also apply to trainees and apprentices in similar circumstances. Spanish MEP Enrique Calvet Chambon, from the ALDE liberal group that has pushed through the new rules, said: “From now on no employer will be able to abuse the flexibility in the labour market. “All workers who have been in limbo will now be granted minimum rights thanks to this directive.”
Those laws, which were announced late last year and were described as the biggest package of workplace reforms for more than 20 years, saw the maximum fine for employers mistreating their workers quadrupled, to £20,000. The rules will come into force in April 2020. | https://www.taxi-point.co.uk/post/2019/04/17/gig-economy-workers-including-uber-drivers-and-deliveroo-couriers-to-be-given-new-employm |
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