nopperl/arxiv-image-text · Datasets at Hugging Face

dedup-isc-ft-v107-score float64 0.32 1	uid stringlengths 32 32	text stringlengths 0 32.5k	paper_id stringlengths 1 14	original_image_filename stringlengths 5 222
0.394218	b26c307a23854c53b8e28c05bc917e14	AFM topography of a 54 nm PZT film showing 0.22 nm rms roughness over a 5 × 5 μm^2 area.	cond	mat0411178-Fig3.jpg
0.541791	5e399d760fd149408ec26eaa6e215005	Schematic representation of local polarization switching in a ferroelectric thin film. The application of voltage pulses of magnitude Δ V and duration Δ t between a metallic AFM tip and the conducting substrate produces nanoscale circular domains penetrating through the thickness of the film.	cond	mat0411178-Fig4.jpg
0.472169	c5108bcd07b343af99f214cd78ceed63	Schematic representation of the two antisymmetric polarization states in the tetragonal ferroelectric PZT unit cell. Applying a small AC voltage with an AFM tip excites a local piezoresponse, detected using a lock-in technique. The two polarization states (P_ UP and P_ DOWN.) respond 180^∘ out of phase with each other, thus allowing a phase contrast image of the ferroelectric domains to be obtained.	cond	mat0411178-Fig5.jpg
0.400193	26a405e7c8f3474bb8bdabe259eb823b	PFM image of AFM-written linear ferroelectric domains 925 ± 15 nm wide. Similar domain structures have been used in a prototype surface acoustic wave device with GHz frequencies.	cond	mat0411178-Fig6.jpg
0.498691	3345c259285d4b54abbdf5ac43f487be	PFM images of the same array written with 500 ns, 12 V pulses, straight after writing (a), 1 week later (b), after 2 weeks(c) and at the end of the experiment, a month later (d). The average domain radii are 29.2 nm, 27.0 nm, 27.2 nm and 27.7 nm respectively, unchanged within the ±4 nm error of the experiment.	cond	mat0411178-Fig7.jpg
0.563216	c14d4d8369d94eba9113be81c0f7ea46	Domain wall speed as a function of the inverse applied electric field for 37.0, 54.5, 81.0 and 95.4 nm thick films. The data agree with the creep equation v ∼exp[-R/k_BT(E_0/E)^μ] with μ = 0.93, 0.62, 1.19, and 0.70 respectively. Fits of the data to log v = A(1/E)^μ are shown for the 54.5 and 95.4 nm films.	cond	mat0411178-Fig8.jpg
0.506241	b62b7a421762451b8fda739a03cb417c	Schematic drawing of a triangular step domain on a 180^∘ domain wall, as described by Miller and Weinreich <cit.> The applied electric field E is parallel to P_ DOWN.	cond	mat0411178-Fig9.jpg
0.493159	b54cf8e38bf74f8b9220daabc3f1fa86	Schematic view (a) and scanning electron micrograph (b) of our sample. Four normal-metal (Cu) leads are connected to the periphery of a superconducting Al disk (diameter =1.5 μm, thickness = 33 nm) through small tunnel junctions with area ≈ 0.01 (μm)^2. The disk is directly connected to an Al drain lead. This structure was fabricated using e-beam lithography followed by double-angle evaporation of Al and Cu. After the Al film was deposited, the surface of the Al film was slightly oxidized to provide the tunnel barrier. Most of the Al disk, indicated by the dashed circle, is covered with a Cu film (bright regions). We expect that the Cu film will not have any serious influence on the superconductivity of the Al disk because of the insulating AlO_x layer between them.	cond	mat0411182-Figure1.jpg
0.43205	e86607136f7d4f449f4f7f68d5b52bd5	(a) Variation of voltages at junctions A, B, C, and D in a decreasing magnetic field. The current through each junction is 100 pA. Temperature is 0.03 K. (b) Differential voltage dV/dB for junction pairs at symmetrical positions, A and D. (c)(d) The same as (a) and (b), respectively, but for increasing magnetic fields.	cond	mat0411182-Figure2.jpg
0.467625	daec39cb12704d8e8a3315a9207bc060	(a) Calculated free energy F for a disk with R=5.0ξ, d = 0.1ξ, and κ = 0.28, normalized by the B=0 value F_0, for decreasing and increasing magnetic fields. For the sake of clarity the free energy for increasing field is shifted over +0.2F_0. Red and black segments indicate MVS and GVS, respectively. The insets show the contour plots of the Cooper-pair density for the L = 3 state (i) at B = 6.0 mT and (ii) at B = 11.0 mT, corresponding to decreasing and increasing magnetic field, respectively. Red (blue) regions correspond to high (low) values of the Cooper-pair density. The Cooper-pair density for decreasing magnetic field is also shown for (b) the L=4 state at B=7.2 mT, (c) the L=6 state at B=9.3 mT, and (d) the L=9 state at B=13.0 mT.	cond	mat0411182-Figure3.jpg
0.512987	937b31eff1b141179620081cf07eabb3	(a) The main panel shows the differential voltages dV_A/dB and dV_D/dB for the L = 8 state in decreasing magnetic field. The inset shows the measured variation of voltages V_A and V_D for the L = 8 state. The arrows show the direction of the magnetic-field sweep. Small hysteresis is seen at the voltage jump (around 13.7 mT). (b) Comparison of the calculated free energy of the different (meta-) stable states with L = 8 as a function of the applied magnetic field; i.e, the (1,7)-state (red curve), the (8)-state (blue curve) and the GVS (green curve). To simulate a defect near the center, a circular hole with radius 0.1ξ is inserted at a distance 0.2ξ from the disk center. The insets (i)-(iii) present the Cooper-pair density of the (1,7) and the (8)-state at B = 12.5 mT, and the GVS at B = 14.6 mT. Insets (iv) and (v) show the transitions between the (1,7)-state and the (8)-state in more detail.	cond	mat0411182-Figure4.jpg
0.407173	8a69ad4e4211434f86a0aed9a5d215bf	The second moment averaged over 10 realization of random magnetic fields as a function of time t for E/V = 0.5 and h_ rf=0.04. The fluctuation around the mean value is plotted at t/(ħ /V)= 500, 1000, 1500 and 2000.	cond	mat0411183-fig1.jpg
0.434639	7ececfc445864cfca3940e4516eae2ec	The conductivity as a function of h_ rf for E/V = 0.5. For h_ rf < 0.1, the conductivity stays on the order of the conductance quantum e^2/h.	cond	mat0411183-fig2.jpg
0.509008	849c132b797645e0ae9d74cdef91e1eb	The conductance under the fixed boundary conditions for E/V = 0.5 and L=60(open circles), 80(open squares), 100(open triangles), 120(solid triangles), 140(solid squares) and 160(solid circles). The average over 1000 realizations of random fields is performed.	cond	mat0411183-fig3.jpg
0.484931	c12aab40a41c449dbcb1ad47dbc040ab	The conductance under the periodic boundary conditions for E/V = 0.5 and L=60(open circles), 80(open squares), 100(open triangles), 120(solid triangles), 140(solid squares) and 160(solid circles). The average over 1000 realizations of random fields is performed.	cond	mat0411183-fig4.jpg
0.363889	d8b1a229cc934da19edf1a39c1bf5634	The conductance under the periodic boundary conditions for E/V = 0.5 and L=80(open squares), 100(open triangles), 120(solid triangles) as a function of 1/h_ rf. The period in 1/h_ rf is estimated to be 1.33.	cond	mat0411183-fig5.jpg
0.365605	58f35538643f4103bf98f653dfee136c	The density of states for E/V = 0.5.	cond	mat0411183-fig6.jpg
0.374664	e6c32060824344c193e8eec32c3304fa	The conductance for E/V=0.5 in the case where the random fluxes ϕ/ϕ_0 are distributed in the range [ -0.05h_ rf, 0.95h_ rf ]. Open squares, open triangles, solid triangles represent L=80, 100 and 120, respectively.	cond	mat0411183-fig7.jpg
0.412768	07384fd4c7444567bec535deb6a962f8	QCB inverse space. The first BZ is bounded by a sooid square	cond	mat0411184-BZ-non.jpg
0.436876	db6d661fdf65465b90905425bad0cbdf	Wave vectors involved in the resonance interaction. Resonant lines are displayed by solid lines.	cond	mat0411184-BZ-res.jpg
0.513585	0122ea9621c640dd86c629da399aab36	Part of the reciprocal space. The small square Q_j/Q_0≤ 0.5 is the quarter of the first QCB BZ. High symmetry lines are parallel to the coordinate axes. Resonant lines are parallel to BZ diagonals. The arcs coming over the point B_1, B_2, B_3, B_4, B_5, correspond to different wave numbers of the excited plasmons: \|Q/Q_0\|=0.3; 0.5; 0.6; 0.7; 0.8.	cond	mat0411184-BZNew.jpg
0.511735	d42345f6039f4dfd88694f3ecf395248	The low-energy part of the band structure of a metallic nanotube. Lines 1,3 (2,4) correspond to excitations with p=+1 (p=-1). Lines 1,2 (3,4) correspond to excitations with orbital quantum number m=0 (m=± 1).	cond	mat0411184-CN-sp-2D.jpg
0.627942	0806d87544fb4b66a03085e0c7d74469	(a) Second order diagram describing light scattering on QCB. Solid lines correspond to fermions, whereas dashed lines are related to photons. The vertices are described by the interaction Hamiltonian (<ref>). (b) Effective photon-plasmon interaction. QCB excitation is denoted by wavy line.	cond	mat0411184-FeinmannDiagr.jpg
0.496616	46008ed5951b459cae2f0d4f73878cc0	Positions of the scattering peaks for \|K/Q_0\|=0.3. The doublet in the resonance direction (point B_1 in Fig. <ref>) is well pronounced.	cond	mat0411184-Kll_03.jpg
0.49538	b3a32008a4e740a786a882af71bf4ca5	Positions of the scattering peaks for \|K/Q_0\|=0.5. Two doublets appear at the BZ boundaries (points C_1 and D_1 in Fig. <ref>).	cond	mat0411184-Kll_05.jpg
0.469906	1ae739bf444e41aaa0656da8ec974842	Positions of the scattering peaks for \|K/Q_0\|=0.6. Two doublets at the BZ boundaries (points C_2 and D_2) in Fig. <ref>) are shifted from the high symmetry directions.	cond	mat0411184-Kll_06.jpg
0.464507	998ae7675de044f8b8438c8dfb19800c	Positions of the scattering peaks for \|K/Q_0\|=√(2)/2. Resonance triplet corresponding to point B_4 in Fig. <ref> (two of four frequencies remain degenerate in our approximation). In IR experiments only one of the triplet components is visible.	cond	mat0411184-Kll_07.jpg
0.495372	33a4a48a85ef403c8310eaa6b4b9a620	Positions of the scattering peaks for \|K/Q_0\|=0.8. Two pairs of doublets appear corresponding to excitation of two pairs of plasmons in the two arrays (points E and F in Fig. <ref>).	cond	mat0411184-Kll_08.jpg
0.472053	4bf07f8d3c2e440aafb8e137d6fe188f	The scattering process geometry (all notations are explained in the text).	cond	mat0411184-X-Scatt.jpg
0.496705	58738cb39434473186d075f813c051ce	Source drain current as a function of Gate voltage, showing threshold voltage shift as a function of implant density. Measurements taken with a 100μV source drain voltage at room temperature. The squares indicate the threshold voltage after implantation. The circles show the location of the kink in the current at a similar voltage to the threshold in the unimplanted device.I, II, and III indicate three different conduction regimes, which are discussed in the text.	cond	mat0411185-figure1.jpg
0.394629	68a807cdc2474e14bb2133390451ef80	Trap density vs Implant density for both P and Si implanted devices. Linear fits to the data are shown. The data for P implants at 5 × 10^11cm^-2 is for a device fabricated on a separate wafer.	cond	mat0411185-figure10.jpg
0.466346	f57f6d58e00d41369602fae09c842c5d	Calculated carrier density vs gate voltage, T=300K, implant range = 20nm, implant straggle = 7nm.	cond	mat0411185-figure2.jpg
0.488687	9212d5c970c34cebbed2aaa2e731d8bf	Measured ionisation ratio ( number of activated ions times probability of ionisation divided by number of implanted ions) as a function of implant density for P implants at 16keV after rapid thermal annealing.	cond	mat0411185-figure3.jpg
0.5127	dad5339e227e420fa28cb8e0f7650cbc	Lowest order anharmonic correction to the free energy difference Δ G: The coefficient Δ c_2(p,L) for L=100, 140, 200, 300, 450 vs. p; for each L the difference (C_2(p)-C_2^0)/L is numerically evaluated at all stable minima; the interpolates taken at p=p^* are plotted against 1/L (inset); this procedure extrapolates to a value Δ c_2^*=-0.01784(5).	cond	mat0411188-DC2_sq.jpg
0.462514	8351b4b364fc4ffb8464afec8be429c0	The 8 stable equilibria corresponding to N=28, y_0=0, y_N+1=L=80. Not shown are 7 unstable equilibria enmeshed between the stable ones. Inset: total energies for both stable (black squares) and unstable (red open circles) equilibria. The continuous curve corresponds to a theoretical estimate which does not distinguish between stable and unstable equilibria (cf. text). Note that the typical energy difference - which does not shrink with increasing L - between neighboring extrema is about 0.15.	cond	mat0411188-DW_sq.jpg
0.366115	306bbece319f4e97800708449bababc5	The unstable manifold of the FP of the map (<ref>) for R=10.1 and N=28. Black squares belong to stable equilibria, red open circles belong to unstable equilibria. The horizontal line at y=44 demostrates the multivaluedness of the manifold as a function of y (4 stable and 3 unstable equilibria with that value of y; details in the inset). The vertical lines are drawn at p_min and p_max, the minimal and maximal asymptotic slopes of DWs.	cond	mat0411188-MorseUnstManifold.jpg
0.44552	e417d39049c440fc9e15923e6793c889	Phase diagram in the f-T plane. The dotted line is obtained on the basis of the Gaussian approximation (predicted T_c=1.291). The solid line is Eq. <ref> with Δ c_2^*=-0.01784 (cf. Fig. <ref>). Inset: detail of critical region, showing a predicted T_c=1.215; the triangle is the result of a finite-size scaling numerical TI calculation T_c=1.227 [numvarc].	cond	mat0411188-PhaseDiagIII.jpg
0.465978	570681315cd843fcb104f052244b031e	Eigenvalue spectra of the hessians A^(0) (open squares) and A^(*) (open circles) for N=32 and L=100. The DW's spectrum consists of bands of optical and acoustic phonons, localized respectively in the bound and unbound portions of the chain, and a single local mode in the gap; both bands are well described (to order O(1/L)) by the corresponding free phonon dispersion curves (dotted).	cond	mat0411188-spectra.jpg
0.399268	0bfb06a407ce4094973314c2a826ce9c	The first three cumulants for the one-dot shuttle as a function of the damping γ. The parameters are λ=1.5 x_0, d=eE/mω^2=0.5 x_0.	cond	mat0411190-FCSHawaii.jpg
0.426486	4ae528ba02cc47b7af3ade1bb4159383	Current I and Fano factor F vs. damping γ. The γ-dependence of I (upper panel) and F on log scale (lower panel) for different transfer rates Γ and tunnelling lengths λ. The parameters are λ=x_0,Γ=0.01 (full); λ=x_0,Γ=0.05 (long dashes); λ=2x_0,Γ=0.01 (short dashes); λ=2x_0,Γ=0.05 (dots) with x_0=√(ħ/m). Other parameters are eE/m^2=0.5x_0, T=0. The current is in units of e while γ in units of . The asterisk defines the parameters of Wigner distributions in Fig. <ref>. (Reproduced from Ref. nov-prl-04.)	cond	mat0411190-Fano.jpg
0.456095	abb5731d750440889bc79616da640879	I-γ curve. The damping dependence of the stationary current through the single-dot shuttle for different transfer rates and electric fields. Their values are d=0.5x_0,Γ=0.05ħ (pluses; corresponds to Fig. <ref>), d=0.5x_0,Γ=0.01ħ (circles), d=0.0,Γ=0.05ħ (asterisks), d=0.0,Γ=0.01ħ (crosses). Other parameters are λ=x_0,T=0. The current is in units of e while γ in ħ. (Reproduced from Ref.nov-prl-03)	cond	mat0411190-Ig-curve.jpg
0.498257	b7ad4c2ba09241f789d4ed91fa43c2f9	Transition from quantum limit to classical limit. The “quantum thickness" of the Wigner ring shrinks, and the radius increases, indicating larger maximal velocity, and oscillation amplitude.	cond	mat0411190-WFquantclass.jpg
0.441841	f2d8ce0f6f3545fdb582a480a02e44b1	Phase space picture of the shuttle around the transition where the shuttling and tunnelling regimes coexist. The respective rows show the Wigner distribution functions for the discharged (W_00), charged (W_11), and both (W_ tot=W_00+W_11) states of the oscillator in the phase space (horizontal axis – coordinate in units of x_0=√(ħ/m), vertical axis – momentum in ħ/x_0). The values of the parameters are: λ=2x_0,eE/m^2=0.5x_0,γ=0.029, Γ=0.01,T=0.	cond	mat0411190-Wigner.jpg
0.542479	c8d69e24e4fe46a39034a70d28caf318	Phase space picture of the tunnelling-to-shuttling crossover. The respective rows show the Wigner distribution functions for the discharged (W_00), charged (W_11), and both (W_ tot) states of the oscillator in the phase space (horizontal axis – coordinate in units of x_0=√(ħ/m), vertical axis – momentum in ħ/x_0). The values of the parameters are: λ=x_0,T=0,d=0.5x_0,Γ=0.05ħ. The values of γ are in units of ħ. The Wigner functions are normalized within each column. (Reproduced from Ref. nov-prl-03)	cond	mat0411190-phasespace_reduced.jpg
0.40711	e2668683ad45442981bab064cb12c361	Schematic picture of a three-dot system, introduced by Armour and MacKinnon <cit.>. The outer dots are fixed — the left one (L) at the position -x_0 and the right one (R) at x_0, while the central one (C) can move (position x̂) in a harmonic confining potential. It also interacts with a heat bath causing damping and thermal noise. The outer dots whose respective energy levels are de-aligned by the device bias (_b) are coupled to the full or empty electronic reservoirs (leads), respectively. The current flows within the system due to tunneling between the left and central dot and the central and right dot. (Reproduced from Ref. nov-prl-03).	cond	mat0411190-setup.jpg
0.492535	2de3b87521f24438934406f4f9b10a29	3D plot of a 4-node height profile with nodes at (± 20,± 20) and charges 2.0, -1.5, -1.0, and 0.5 (in units of 2ν/λ)	cond	mat0411194-162-227.jpg
0.508568	8667119a8fb74596844f896fa94e7f65	The radially symmetric bound states of the NLSE are depicted for k=k_0=1 in d=1, d=2, d=3, d=3.5.	cond	mat0411194-162-229.jpg
0.508336	3f883cabc75e435bab2db3d804df7257	Illustration of first step replica symmetry breaking. The limits n→ 0 and m→ x_c have to be taken with 0<x_c<1.	cond	mat0411195-1sbdia.jpg
0.454307	1f141d5b25ba48529f6663a9734ab878	Plot of Δ_F/ vs. L. The parameters are the same as in Fig. <ref> and we average over 1000 random potential realizations.	cond	mat0411195-delf.jpg
0.424637	50ab2013b55c43f28731a3d134045e9c	A plot of ln(-S/L+ln 6) vs. ln(ln V/\|ln(1-x)\|). The labels are marked according to the chain length.	cond	mat0411195-fig1n.jpg
0.459227	4b70ad81fbfb4e91a669e14ffd75c4a8	Plot of vs. L. The dotted line is generated by averaging over 10000 samples, and error bars are found by computing the standard deviation of 10 sets of 1000 samples. The dashed line is the RS solution, and the solid line is the RSB solution.	cond	mat0411195-rf0125.jpg
0.47175	1338f42bc85b45d99e280869f40d0ca9	Plot of x_c vs. L. The parameters are the same as those used in Fig. <ref>.	cond	mat0411195-zplot.jpg
0.506007	77701153c1c746f58891c81ccc4dbac7	A plot of the observed vs. calculated end-to-end distance	cond	mat0411195-zrlog.jpg
0.426955	dce98ab8332e4a8ebf6bc193f0fc4c94	T_c as a function of the total occupation number n_T (where n_T=n_σ^d+n_-σ^d). In (a) and (b), the dotted lines show the previous results from Ref. <cit.> for U=12\|t^d\|. The solid lines show the behavior of T_c in the present approach. The figures (c) and (d) show the present results for U=8\|t^d\|. The units of the hybridization V_0^pd are electron-volts (eV). (t^d=-0.5eV.)	cond	mat0411200-calegari-549-f1.jpg
0.446312	475ef4762fde4b9c8a5dc69d623ec646	The pair amplitude F(Z), normalized to its bulk value F_0, for a three layer SFS structure, plotted as a function of Z≡ k_FS z and of the dimensionless magnetic polarization I, at Λ=1 and H_B=0. The Z=0 point is at the center of the structure. Panel (a) corresponds to self consistent results obtained (see text) with an initial guess where the junction is of the “0” type and panel (b) with a “π” type. In the latter case, the solution found is of the π type except at very small I and in the neighborhood of I≈ 0.4, but in the former case (panel (a)), a more complicated behavior occurs, as discussed in the text.	cond	mat0411203-fig1.jpg
0.460427	b3e5a2e49b114a879883b7861e745399	The normalized pair amplitude F(Z) for a SFSFSFS seven layer structure, plotted as a function of Z and of the barrier height parameter H_B. Here I=0.2 and Λ=1. Panels (a) (b) (c) and (d) correspond, respectively, to attempts to find solutions of the 000, πππ, π0π and 0π0 types (see text). The resulting structure, however, it is not necessarily of the sought type, since some of the structures are unstable in part of the H_B range, as explained in the text. For clarity, the direction of increasing H_B is not the same in every panel.	cond	mat0411203-fig2.jpg
0.45617	849868bb7e3a48f282d3f599b5cb562e	The normalized pair amplitude F(Z) for a SFSFSFS seven layer structure, as in the previous Figure. The top and bottom panels correspond to initial attempts to find the asymmetric π00 and ππ0 states respectively. Clearly such attempts only succeed when the barrier is high and the proximity effects weak (see text).	cond	mat0411203-fig2a.jpg
0.454486	edc70a96678648afa8001197f30f6132	The normalized pair amplitude F(Z) for a SFSFSFS seven layer structure, plotted as in Fig. <ref> and with the same panel arrangements, but as a function of the mismatch parameter Λ at zero barrier. Note that the direction of increasing Λ is, for clarity, not the same in all the panels.	cond	mat0411203-fig3.jpg
0.429833	b3ba88ab2f724956a781104bcd187ed8	The normalized DOS (see text) for a SFS trilayer, plotted as a function of the energy (in units of the bulk zero temperature gap), and of the exchange energy parameter I≡ h_0/E_FS. The panel arrangement is the same as in Fig. <ref>: therefore the plots correspond to 0 and π self consistent states as in that figure.	cond	mat0411203-fig3a.jpg
0.438559	84efbf1e648c4d438815f4d28e5c3eee	The normalized DOS for a SFS trilayer, plotted as a function of the energy, and of the mismatch parameter Λ, at I=0.2 and H_B=0. The panel arrangement again corresponds to that in Fig. <ref>. In the bottom panel, the results plotted are for a self consistent π structure, while in the top panel they are for a 0 structure for Λ <0.64 and a π structure at smaller mismatch, when the 0 structure is not stable.	cond	mat0411203-fig4.jpg
0.446376	5ac6e58c9ab6469abaec64cff2b3e2d1	The normalized DOS for a SFS trilayer, plotted and displayed as in Fig. <ref>, and under the same conditions, but as a function of barrier height rather than mismatch. The results shown in the bottom panel correspond to a π structure, while those the top panel they are for a 0 structure for H_B>0.29 and a π structure at smaller barrier height values, when the 0 structure is not stable (see text).	cond	mat0411203-fig5.jpg
0.489844	c1effe02f4c8444bae6a0239f6253b94	The normalized DOS for a SFS trilayer, plotted as a function of the energy. Results for both 0 and π self consistent states are given, as indicated. These are slices from Figs. <ref> and <ref>. In the top panel, the DOS is shown at H_B=0 for two different values of the mismatch parameter, Λ=0.2, and 0.67, the latter being a case for which the 0 state is nearly unstable (see text). The bottom panel shows the DOS profile in the absence of mismatch (Λ=1), but with the interface scattering parameter H_B taking on the two values shown, chosen on similar criteria as the Λ values (see text).	cond	mat0411203-fig6.jpg
0.424591	8168b53dc35f4857aae2ef3b49fb0cff	The normalized DOS for the SFSFSFS structure of Figs. <ref> and <ref>, with the same panel arrangements as in those figures, plotted as a function of the energy and of the mismatch parameter Λ.	cond	mat0411203-fig7.jpg
0.460591	e42bfa0c6b984eca929f37779ef86998	The normalized DOS for the SFSFSFS structure of Figs. <ref>, <ref> and <ref>, plotted as in Fig. <ref> except as a function of barrier height H_B instead of Λ.	cond	mat0411203-fig8.jpg
0.498638	4132dfe10cb4404aa9e4a07a41a593dd	Various total system energies with a vortex present versus system radius R.	cond	mat0411205-E2R.jpg
0.445502	e22b714067e94828814279b02d273342	Application of the L-dependence of the fourth order cumulant U_L on various system sizes to estimate T_c/J≈ 0.48 (common crossing point of the data) at 16% vacancy density in the XY model.	cond	mat0411205-UL16lam0.jpg
0.417781	68e4e9c5d4654c918cae89cf7d40acd8	Application of the finite-size scaling of in-plane susceptibility to estimate T_c/J ≈ 0.478 (common crossing point of the data) at 16% vacancy density in the XY model, using exponent η=1/4.	cond	mat0411205-chi_lam0_16.jpg
0.458297	e39559b47ef6437c927cf6e8a5e9357f	Application of the finite-size scaling of in-plane susceptibility to estimate T_c/J ≈ 0.404 (common crossing point of the data) at 16% vacancy density at the vortex-on-vacancy critical anistropy.	cond	mat0411205-chi_lamcv_16.jpg
0.552412	d18e36a4d30c4daf84f8d2a7997ca540	Out-of-plane susceptibilities χ^zz vs. temperature for L=128, at the three anisotropies studied. The lower curves at low T (open symbols) correspond to ρ_vac=0, the upper curves (solid symbols) correspond to ρ_vac=0.16 . Unlike χ^xx or χ^yy, there is only a very weak dependence of χ^zz on L, mostly in the high-temperature phase.	cond	mat0411205-chiz.jpg
0.456039	1a82ded0c5984dfd9423f6b9d8c9a920	For the model with edge L=64, at the XY limit, the internal energy, absolute magnetization, and specific heat per spin for the uniform system and with 16% vacancy density.	cond	mat0411205-eclam0.jpg
0.468719	251fca525d8c427d87a8d8da71ca1ca3	For the model with edge L=64, at the vortex-in-plaquette critical anisotropy, the internal energy, absolute magnetization, and specific heat per spin for the uniform system and with 16% vacancy density.	cond	mat0411205-eclam7.jpg
0.489546	91d1fa0c76e84f3a9b51ea21cdfa4176	For the model with edge L=64, at the vortex-on-vacancy critical anisotropy, the internal energy, absolute magnetization and specific heat per spin for the uniform system and with 16% vacancy density.	cond	mat0411205-eclamcv.jpg
0.453273	e65255d9a9ca43c79c1f12eeece0ad9f	Thermally induced vorticity density for the uniform XY model [ρ(0)] and at 16% vacancy density [ρ(0.16)]. Also displayed are the vorticity fraction pinned on vacancies [f_pin] and the fraction with doubled charges [f_dbl], both when ρ_vac=0.16.	cond	mat0411205-rho_lam0.jpg
0.461367	6f8a9bec8fdd4b20aca58628dcef827b	Thermally induced vorticity density [ρ(0)] at the vortex-on-vacancy critical anisotropy with 16% vacancy density [ρ(0.16)]. Also displayed are the vorticity fraction pinned on vacancies [f_pin] and the fraction due to double charges [f_dbl], at 16% vacancy density.	cond	mat0411205-rho_lamcv.jpg
0.430585	2f141713a0504bd99cd52504fd52769f	Magnetoresistance ρ_⊥ (H, θ, ϕ) as a function of "dimensionless magnetic field", h=ω_b(H, θ = π/2) τ [see Eq.(7)], calculated by means of Eq.(15) for Q1D electron spectrum (1) with f(p_y b^)=cos(p_y b^), t_a/t_b = 8.5, b^=c^/2. Upper curve: non-saturated magnetoresistance for localized electron wave functions (11)-(13) at θ =3.5^o and ϕ = 2.6^o. Lower curve: saturated magnetoresistance for de-localized wave functions (11)-(13) at θ =3.5^o and ϕ = 1.75^o, corresponding to commensurate direction (4) of a magnetic field (3) with n=1.	cond	mat0411206-PRB-fig1.jpg
0.428538	24e6033d081e4d349cb74cbf6dd4e807	Solid curve: magnetoresistance ρ_⊥ (H, θ, ϕ) as a function of angle ϕ calculated at θ =7^o by means of Eq.(15) for f(p_y b^) given by Eq.(5) with Δ/2t_b = 0.1, t_a/t_b = 10, b^=c^*/2, h=ω_b(H, θ = π/2) τ =15. Dotes: experimental points [35] obtained on (TMTSF)_2ClO_4 conductor at θ =7^o and H = 10 T [35,38].	cond	mat0411206-PRB-fig2.jpg
0.440497	83324f44049b45f7acfff3d515ab4dda	(a) Ranges of interaction between normal vectors of triangles for S_2 in (<ref> ), and (b) those for S_2 in (<ref>). The normal vector of the shaded triangle interacts with those of the surrounding triangles in (a) and (b). Small spheres represent vertices.	cond	mat0411209-fig-1.jpg
0.446392	67649af978a04d81abf84a8874e931da	(a) S_1/N_B vs b of Model-1, and (b) S_1/N_B vs b of Model-2, where N_B is the total number of bond. N=1500.	cond	mat0411209-fig-2.jpg
0.448633	be4bdcdfe17a4ee0a76241a85cb407a8	(a) C_S_2 vs b, and (b) C_S_2^ max vs N in log-log scale, both (a) and (b) are obtained by Model-1 whose Hamiltonian is S_1+bS_2. (c) C_S_2 vs b, and (d) C_S_2^ max vs N in log-log scale, both (c) and (d) are obtained by Model-2 whose Hamiltonian is bS_2+V.	cond	mat0411209-fig-3.jpg
0.443172	32bc673c0dfc4d0aa239bfa8e256817b	(a) Variation of S_2/N_B against the number of MCS, and (b) the histogram h(S_2/N_B), obtained by Model-1. The results obtained by Model-2 are shown in (c) and (d).	cond	mat0411209-fig-4.jpg
0.464391	da1ef7132eea4b008f75cc433768d109	(a) Variation of X^2 against the number of MCS, and (b) the histogram h(X^2), obtained by Model-1. The results obtained by Model-2 are shown in (c) and (d).	cond	mat0411209-fig-5.jpg
0.468538	12af7548ef6b4e438156ecd75e76fb8b	(a) X^2 vs b of Model-1, (b) X^2 vs N at the transition point b=b_c(N). The results obtained by Model-2 are shown in (c) and (d).	cond	mat0411209-fig-6.jpg
0.427186	aaca0c5a40f9444a81e54ea058cecf6e	Snapshots of Model-1 surfaces obtained at (a) b=0.475(crumpled phase), (b) b=0.478(smooth phase), and the sections of the surfaces in (a) and (b) are shown in (c) and (d) respectively. N=2500.	cond	mat0411209-fig-7.jpg
0.377996	cd68b27dda3d438cba6e2a83714065c7	C_S_2 vs b at (a) α=-5.5, L=1.5L_0(N) and (b) α=-5.5, L=3L_0(N). μ=15.9 (◯), μ=15.5 (), and μ=14.8 () respectively correspond to N≃1500, N≃1000, and N≃500.	cond	mat0411210-fig-1.jpg
0.395514	526aee2eb1064ade9eed2c66a16029d9	C_S_2^ max vs ⟨ N⟩ in log-log scale at (a) α=-5.5, L=1.5L_0, and at (b) α=-5.5, L=3L_0.	cond	mat0411210-fig-2.jpg
0.42196	131369d011e74f6fbe52bb5605dbeff9	Variation of ⟨ S_2⟩ /⟨ N_B⟩ against MCS at (a) b=1.86, L=1.5L_0 (at the critical point of the continuous transition) and at (b) b=1.86, L=3L_0 (at the discontinuous transition point), where α=-5.5, μ=15.9.	cond	mat0411210-fig-3.jpg
0.395847	2df063c4bef645cc91956adf17313f82	σ vs b obtained at (a) α=-5.5, L=1.5L_0 and at (b) α=-5.5, L=3L_0.	cond	mat0411210-fig-4.jpg
0.494232	f3e16f23092c4e19a925bd381c2ddf99	σ vs ⟨ N⟩ in log-log scale obtained at (a) α=-5.5, L=1.5L_0 and at (b) α=-5.5, L=3L_0.	cond	mat0411210-fig-5.jpg
0.411342	4e126ec2cd844f56a26aba093e882426	Snapshots of surfaces at (a) b=1.86, α=-5.5, L=1.5L_0 and at (b) b=1.86, α=-5.5, L=3L_0.	cond	mat0411210-fig-6.jpg
0.505478	f4f967f3f7e34358882a191a84b28f28	(a) X^2 obtained at relatively small α in the vicinity of the boundary between the crumpled and the tubular phases, (b) X^2 obtained at relatively large α in the vicinity of the boundary between the tubular and the smooth phases. The unit of X^2 and α is kT/a, where a is the surface tension.	cond	mat0411211-fig-1.jpg
0.463775	1f8c5afc329d40b382423deee797418f	(a) Log-log plot of X^2 vs N at α=50 (crumpled phase), and α=200 (tubular phase), and (b) those obtained at α close to the phase boundary of the discontinuous transition. The unit of X^2 is kT/a.	cond	mat0411211-fig-2.jpg
0.419886	89d5eb32093440398526061db68e2c72	Snapshots of N=1000 surfaces obtained at (a) α=50 (crumpled), (b) α=200 (tubular), (c) α=12000 (tubular), and (d) α=16000 (smooth). Surfaces in (a), (b), and (d) are drawn in the same scale, which is different from that in (c).	cond	mat0411211-fig-3.jpg
0.444747	82186dd1db1d4eee8cc8d17a6b8e7989	Normalized distribution h(L) of the bond length L obtained at (a) α=50 (crumpled), and α=200 (tubular), and at (b) α=12000 (tubular), and α=16000 (smooth), on N=1000 surfaces. The unit of L is √(kT/a).	cond	mat0411211-fig-4.jpg
0.439588	2962d7a3d46c409bbb8008789af83afb	Maximum bond length L_ max at (a) relatively small α, and at (b) relatively large α. The unit of L_ max is √(kT/a), and that of α is kT/a	cond	mat0411211-fig-5.jpg
0.424836	a00d5c9892274cb88c195cb712a5e904	The bending energy S_2/N_B=∑_i(1-cosθ_i)/N_B at (a) relatively small α, and at (b) relatively large α. N_B is the total number of bond. The unit of α is kT/a.	cond	mat0411211-fig-6.jpg
0.441646	e8559cb4744143e6b0fba8d6e5c9271e	(a) One (out of five) of the symmetry coordinates of the F_1u mode which modulates Cr–Cr exchange, arrows show displacements; (b) spin ordering expected for a tetragonally distorted tetrahedron in ZnCr_2O_4, arrows indicate spins.	cond	mat0411213-fig1.jpg
0.382733	50611f06be3748e38604986d14af17ff	(Color online) Top curve: R_LT — reflectivity spectrum of ZnCr_2O_4 single crystal in the low-temperature phase; bottom curve: 2(R_LT-R_HT); inset: R_LT and R_HT (line+symbols) in a narrow range.	cond	mat0411213-fig2.jpg
0.397527	6c47fbae294643118dcd400254875e86	(Color online) Temperature dependence of the fit parameters for the split phonon in ZnCr_2O_4; symbols — fit; squares, circles, and triangles at 7 K — fits of polarized spectra with P=0^∘, 45^∘, 90^∘, respectively.	cond	mat0411213-fig3.jpg
0.47895	8c43b042b39640c0a25b8c0372c11ec2	Crosses: nearest-neighbor correlations ⟨ S_i · S_j ⟩, up to an arbitrary additive constant, derived from the specific-heat data of Martinho et al. <cit.>; straight line fits crosses below 50 K. Squares: the phonon frequency.	cond	mat0411213-fig4.jpg
0.513377	325f03c44d3b4c10a01125d12d86ee86	The average normal stress <σ_xx (x,t) > in the case α_M=0 as a function of x.	cond	mat0411214-AVSXX0.jpg

0.394218

b26c307a23854c53b8e28c05bc917e14

AFM topography of a 54 nm PZT film showing 0.22 nm rms roughness over a 5 × 5 μm^2 area.

cond

mat0411178-Fig3.jpg

0.541791

5e399d760fd149408ec26eaa6e215005

Schematic representation of local polarization switching in a ferroelectric thin film. The application of voltage pulses of magnitude Δ V and duration Δ t between a metallic AFM tip and the conducting substrate produces nanoscale circular domains penetrating through the thickness of the film.

cond

mat0411178-Fig4.jpg

0.472169

c5108bcd07b343af99f214cd78ceed63

Schematic representation of the two antisymmetric polarization states in the tetragonal ferroelectric PZT unit cell. Applying a small AC voltage with an AFM tip excites a local piezoresponse, detected using a lock-in technique. The two polarization states (P_ UP and P_ DOWN.) respond 180^∘ out of phase with each other, thus allowing a phase contrast image of the ferroelectric domains to be obtained.

cond

mat0411178-Fig5.jpg

0.400193

26a405e7c8f3474bb8bdabe259eb823b

PFM image of AFM-written linear ferroelectric domains 925 ± 15 nm wide. Similar domain structures have been used in a prototype surface acoustic wave device with GHz frequencies.

cond

mat0411178-Fig6.jpg

0.498691

3345c259285d4b54abbdf5ac43f487be

PFM images of the same array written with 500 ns, 12 V pulses, straight after writing (a), 1 week later (b), after 2 weeks(c) and at the end of the experiment, a month later (d). The average domain radii are 29.2 nm, 27.0 nm, 27.2 nm and 27.7 nm respectively, unchanged within the ±4 nm error of the experiment.

cond

mat0411178-Fig7.jpg

0.563216

c14d4d8369d94eba9113be81c0f7ea46

Domain wall speed as a function of the inverse applied electric field for 37.0, 54.5, 81.0 and 95.4 nm thick films. The data agree with the creep equation v ∼exp[-R/k_BT(E_0/E)^μ] with μ = 0.93, 0.62, 1.19, and 0.70 respectively. Fits of the data to log v = A(1/E)^μ are shown for the 54.5 and 95.4 nm films.

cond

mat0411178-Fig8.jpg

0.506241

b62b7a421762451b8fda739a03cb417c

Schematic drawing of a triangular step domain on a 180^∘ domain wall, as described by Miller and Weinreich <cit.> The applied electric field E is parallel to P_ DOWN.

cond

mat0411178-Fig9.jpg

0.493159

b54cf8e38bf74f8b9220daabc3f1fa86

Schematic view (a) and scanning electron micrograph (b) of our sample. Four normal-metal (Cu) leads are connected to the periphery of a superconducting Al disk (diameter =1.5 μm, thickness = 33 nm) through small tunnel junctions with area ≈ 0.01 (μm)^2. The disk is directly connected to an Al drain lead. This structure was fabricated using e-beam lithography followed by double-angle evaporation of Al and Cu. After the Al film was deposited, the surface of the Al film was slightly oxidized to provide the tunnel barrier. Most of the Al disk, indicated by the dashed circle, is covered with a Cu film (bright regions). We expect that the Cu film will not have any serious influence on the superconductivity of the Al disk because of the insulating AlO_x layer between them.

cond

mat0411182-Figure1.jpg

0.43205

e86607136f7d4f449f4f7f68d5b52bd5

(a) Variation of voltages at junctions A, B, C, and D in a decreasing magnetic field. The current through each junction is 100 pA. Temperature is 0.03 K. (b) Differential voltage dV/dB for junction pairs at symmetrical positions, A and D. (c)(d) The same as (a) and (b), respectively, but for increasing magnetic fields.

cond

mat0411182-Figure2.jpg

0.467625

daec39cb12704d8e8a3315a9207bc060

(a) Calculated free energy F for a disk with R=5.0ξ, d = 0.1ξ, and κ = 0.28, normalized by the B=0 value F_0, for decreasing and increasing magnetic fields. For the sake of clarity the free energy for increasing field is shifted over +0.2F_0. Red and black segments indicate MVS and GVS, respectively. The insets show the contour plots of the Cooper-pair density for the L = 3 state (i) at B = 6.0 mT and (ii) at B = 11.0 mT, corresponding to decreasing and increasing magnetic field, respectively. Red (blue) regions correspond to high (low) values of the Cooper-pair density. The Cooper-pair density for decreasing magnetic field is also shown for (b) the L=4 state at B=7.2 mT, (c) the L=6 state at B=9.3 mT, and (d) the L=9 state at B=13.0 mT.

cond

mat0411182-Figure3.jpg

0.512987

937b31eff1b141179620081cf07eabb3

(a) The main panel shows the differential voltages dV_A/dB and dV_D/dB for the L = 8 state in decreasing magnetic field. The inset shows the measured variation of voltages V_A and V_D for the L = 8 state. The arrows show the direction of the magnetic-field sweep. Small hysteresis is seen at the voltage jump (around 13.7 mT). (b) Comparison of the calculated free energy of the different (meta-) stable states with L = 8 as a function of the applied magnetic field; i.e, the (1,7)-state (red curve), the (8)-state (blue curve) and the GVS (green curve). To simulate a defect near the center, a circular hole with radius 0.1ξ is inserted at a distance 0.2ξ from the disk center. The insets (i)-(iii) present the Cooper-pair density of the (1,7) and the (8)-state at B = 12.5 mT, and the GVS at B = 14.6 mT. Insets (iv) and (v) show the transitions between the (1,7)-state and the (8)-state in more detail.

cond

mat0411182-Figure4.jpg

0.407173

8a69ad4e4211434f86a0aed9a5d215bf

The second moment averaged over 10 realization of random magnetic fields as a function of time t for E/V = 0.5 and h_ rf=0.04. The fluctuation around the mean value is plotted at t/(ħ /V)= 500, 1000, 1500 and 2000.

cond

mat0411183-fig1.jpg

0.434639

7ececfc445864cfca3940e4516eae2ec

The conductivity as a function of h_ rf for E/V = 0.5. For h_ rf < 0.1, the conductivity stays on the order of the conductance quantum e^2/h.

cond

mat0411183-fig2.jpg

0.509008

849c132b797645e0ae9d74cdef91e1eb

The conductance under the fixed boundary conditions for E/V = 0.5 and L=60(open circles), 80(open squares), 100(open triangles), 120(solid triangles), 140(solid squares) and 160(solid circles). The average over 1000 realizations of random fields is performed.

cond

mat0411183-fig3.jpg

0.484931

c12aab40a41c449dbcb1ad47dbc040ab

The conductance under the periodic boundary conditions for E/V = 0.5 and L=60(open circles), 80(open squares), 100(open triangles), 120(solid triangles), 140(solid squares) and 160(solid circles). The average over 1000 realizations of random fields is performed.

cond

mat0411183-fig4.jpg

0.363889

d8b1a229cc934da19edf1a39c1bf5634

The conductance under the periodic boundary conditions for E/V = 0.5 and L=80(open squares), 100(open triangles), 120(solid triangles) as a function of 1/h_ rf. The period in 1/h_ rf is estimated to be 1.33.

cond

mat0411183-fig5.jpg

0.365605

58f35538643f4103bf98f653dfee136c

The density of states for E/V = 0.5.

cond

mat0411183-fig6.jpg

0.374664

e6c32060824344c193e8eec32c3304fa

The conductance for E/V=0.5 in the case where the random fluxes ϕ/ϕ_0 are distributed in the range [ -0.05h_ rf, 0.95h_ rf ]. Open squares, open triangles, solid triangles represent L=80, 100 and 120, respectively.

cond

mat0411183-fig7.jpg

0.412768

07384fd4c7444567bec535deb6a962f8

QCB inverse space. The first BZ is bounded by a sooid square

cond

mat0411184-BZ-non.jpg

0.436876

db6d661fdf65465b90905425bad0cbdf

Wave vectors involved in the resonance interaction. Resonant lines are displayed by solid lines.

cond

mat0411184-BZ-res.jpg

0.513585

0122ea9621c640dd86c629da399aab36

Part of the reciprocal space. The small square Q_j/Q_0≤ 0.5 is the quarter of the first QCB BZ. High symmetry lines are parallel to the coordinate axes. Resonant lines are parallel to BZ diagonals. The arcs coming over the point B_1, B_2, B_3, B_4, B_5, correspond to different wave numbers of the excited plasmons: |Q/Q_0|=0.3; 0.5; 0.6; 0.7; 0.8.

cond

mat0411184-BZNew.jpg

0.511735

d42345f6039f4dfd88694f3ecf395248

The low-energy part of the band structure of a metallic nanotube. Lines 1,3 (2,4) correspond to excitations with p=+1 (p=-1). Lines 1,2 (3,4) correspond to excitations with orbital quantum number m=0 (m=± 1).

cond

mat0411184-CN-sp-2D.jpg

0.627942

0806d87544fb4b66a03085e0c7d74469

(a) Second order diagram describing light scattering on QCB. Solid lines correspond to fermions, whereas dashed lines are related to photons. The vertices are described by the interaction Hamiltonian (<ref>). (b) Effective photon-plasmon interaction. QCB excitation is denoted by wavy line.

cond

mat0411184-FeinmannDiagr.jpg

0.496616

46008ed5951b459cae2f0d4f73878cc0

Positions of the scattering peaks for |K/Q_0|=0.3. The doublet in the resonance direction (point B_1 in Fig. <ref>) is well pronounced.

cond

mat0411184-Kll_03.jpg

0.49538

b3a32008a4e740a786a882af71bf4ca5

Positions of the scattering peaks for |K/Q_0|=0.5. Two doublets appear at the BZ boundaries (points C_1 and D_1 in Fig. <ref>).

cond

mat0411184-Kll_05.jpg

0.469906

1ae739bf444e41aaa0656da8ec974842

Positions of the scattering peaks for |K/Q_0|=0.6. Two doublets at the BZ boundaries (points C_2 and D_2) in Fig. <ref>) are shifted from the high symmetry directions.

cond

mat0411184-Kll_06.jpg

0.464507

998ae7675de044f8b8438c8dfb19800c

Positions of the scattering peaks for |K/Q_0|=√(2)/2. Resonance triplet corresponding to point B_4 in Fig. <ref> (two of four frequencies remain degenerate in our approximation). In IR experiments only one of the triplet components is visible.

cond

mat0411184-Kll_07.jpg

0.495372

33a4a48a85ef403c8310eaa6b4b9a620

Positions of the scattering peaks for |K/Q_0|=0.8. Two pairs of doublets appear corresponding to excitation of two pairs of plasmons in the two arrays (points E and F in Fig. <ref>).

cond

mat0411184-Kll_08.jpg

0.472053

4bf07f8d3c2e440aafb8e137d6fe188f

The scattering process geometry (all notations are explained in the text).

cond

mat0411184-X-Scatt.jpg

0.496705

58738cb39434473186d075f813c051ce

Source drain current as a function of Gate voltage, showing threshold voltage shift as a function of implant density. Measurements taken with a 100μV source drain voltage at room temperature. The squares indicate the threshold voltage after implantation. The circles show the location of the kink in the current at a similar voltage to the threshold in the unimplanted device.I, II, and III indicate three different conduction regimes, which are discussed in the text.

cond

mat0411185-figure1.jpg

0.394629

68a807cdc2474e14bb2133390451ef80

Trap density vs Implant density for both P and Si implanted devices. Linear fits to the data are shown. The data for P implants at 5 × 10^11cm^-2 is for a device fabricated on a separate wafer.

cond

mat0411185-figure10.jpg

0.466346

f57f6d58e00d41369602fae09c842c5d

Calculated carrier density vs gate voltage, T=300K, implant range = 20nm, implant straggle = 7nm.

cond

mat0411185-figure2.jpg

0.488687

9212d5c970c34cebbed2aaa2e731d8bf

Measured ionisation ratio ( number of activated ions times probability of ionisation divided by number of implanted ions) as a function of implant density for P implants at 16keV after rapid thermal annealing.

cond

mat0411185-figure3.jpg

0.5127

dad5339e227e420fa28cb8e0f7650cbc

Lowest order anharmonic correction to the free energy difference Δ G: The coefficient Δ c_2(p,L) for L=100, 140, 200, 300, 450 vs. p; for each L the difference (C_2(p)-C_2^0)/L is numerically evaluated at all stable minima; the interpolates taken at p=p^* are plotted against 1/L (inset); this procedure extrapolates to a value Δ c_2^*=-0.01784(5).

cond

mat0411188-DC2_sq.jpg

0.462514

8351b4b364fc4ffb8464afec8be429c0

The 8 stable equilibria corresponding to N=28, y_0=0, y_N+1=L=80. Not shown are 7 unstable equilibria enmeshed between the stable ones. Inset: total energies for both stable (black squares) and unstable (red open circles) equilibria. The continuous curve corresponds to a theoretical estimate which does not distinguish between stable and unstable equilibria (cf. text). Note that the typical energy difference - which does not shrink with increasing L - between neighboring extrema is about 0.15.

cond

mat0411188-DW_sq.jpg

0.366115

306bbece319f4e97800708449bababc5

The unstable manifold of the FP of the map (<ref>) for R=10.1 and N=28. Black squares belong to stable equilibria, red open circles belong to unstable equilibria. The horizontal line at y=44 demostrates the multivaluedness of the manifold as a function of y (4 stable and 3 unstable equilibria with that value of y; details in the inset). The vertical lines are drawn at p_min and p_max, the minimal and maximal asymptotic slopes of DWs.

cond

mat0411188-MorseUnstManifold.jpg

0.44552

e417d39049c440fc9e15923e6793c889

Phase diagram in the f-T plane. The dotted line is obtained on the basis of the Gaussian approximation (predicted T_c=1.291). The solid line is Eq. <ref> with Δ c_2^*=-0.01784 (cf. Fig. <ref>). Inset: detail of critical region, showing a predicted T_c=1.215; the triangle is the result of a finite-size scaling numerical TI calculation T_c=1.227 [numvarc].

cond

mat0411188-PhaseDiagIII.jpg

0.465978

570681315cd843fcb104f052244b031e

Eigenvalue spectra of the hessians A^(0) (open squares) and A^(*) (open circles) for N=32 and L=100. The DW's spectrum consists of bands of optical and acoustic phonons, localized respectively in the bound and unbound portions of the chain, and a single local mode in the gap; both bands are well described (to order O(1/L)) by the corresponding free phonon dispersion curves (dotted).

cond

mat0411188-spectra.jpg

0.399268

0bfb06a407ce4094973314c2a826ce9c

The first three cumulants for the one-dot shuttle as a function of the damping γ. The parameters are λ=1.5 x_0, d=eE/mω^2=0.5 x_0.

cond

mat0411190-FCSHawaii.jpg

0.426486

4ae528ba02cc47b7af3ade1bb4159383

Current I and Fano factor F vs. damping γ. The γ-dependence of I (upper panel) and F on log scale (lower panel) for different transfer rates Γ and tunnelling lengths λ. The parameters are λ=x_0,Γ=0.01 (full); λ=x_0,Γ=0.05 (long dashes); λ=2x_0,Γ=0.01 (short dashes); λ=2x_0,Γ=0.05 (dots) with x_0=√(ħ/m). Other parameters are eE/m^2=0.5x_0, T=0. The current is in units of e while γ in units of . The asterisk defines the parameters of Wigner distributions in Fig. <ref>. (Reproduced from Ref. nov-prl-04.)

cond

mat0411190-Fano.jpg

0.456095

abb5731d750440889bc79616da640879

I-γ curve. The damping dependence of the stationary current through the single-dot shuttle for different transfer rates and electric fields. Their values are d=0.5x_0,Γ=0.05ħ (pluses; corresponds to Fig. <ref>), d=0.5x_0,Γ=0.01ħ (circles), d=0.0,Γ=0.05ħ (asterisks), d=0.0,Γ=0.01ħ (crosses). Other parameters are λ=x_0,T=0. The current is in units of e while γ in ħ. (Reproduced from Ref.nov-prl-03)

cond

mat0411190-Ig-curve.jpg

0.498257

b7ad4c2ba09241f789d4ed91fa43c2f9

Transition from quantum limit to classical limit. The “quantum thickness" of the Wigner ring shrinks, and the radius increases, indicating larger maximal velocity, and oscillation amplitude.

cond

mat0411190-WFquantclass.jpg

0.441841

f2d8ce0f6f3545fdb582a480a02e44b1

Phase space picture of the shuttle around the transition where the shuttling and tunnelling regimes coexist. The respective rows show the Wigner distribution functions for the discharged (W_00), charged (W_11), and both (W_ tot=W_00+W_11) states of the oscillator in the phase space (horizontal axis – coordinate in units of x_0=√(ħ/m), vertical axis – momentum in ħ/x_0). The values of the parameters are: λ=2x_0,eE/m^2=0.5x_0,γ=0.029, Γ=0.01,T=0.

cond

mat0411190-Wigner.jpg

0.542479

c8d69e24e4fe46a39034a70d28caf318

Phase space picture of the tunnelling-to-shuttling crossover. The respective rows show the Wigner distribution functions for the discharged (W_00), charged (W_11), and both (W_ tot) states of the oscillator in the phase space (horizontal axis – coordinate in units of x_0=√(ħ/m), vertical axis – momentum in ħ/x_0). The values of the parameters are: λ=x_0,T=0,d=0.5x_0,Γ=0.05ħ. The values of γ are in units of ħ. The Wigner functions are normalized within each column. (Reproduced from Ref. nov-prl-03)

cond

mat0411190-phasespace_reduced.jpg

0.40711

e2668683ad45442981bab064cb12c361

Schematic picture of a three-dot system, introduced by Armour and MacKinnon <cit.>. The outer dots are fixed — the left one (L) at the position -x_0 and the right one (R) at x_0, while the central one (C) can move (position x̂) in a harmonic confining potential. It also interacts with a heat bath causing damping and thermal noise. The outer dots whose respective energy levels are de-aligned by the device bias (_b) are coupled to the full or empty electronic reservoirs (leads), respectively. The current flows within the system due to tunneling between the left and central dot and the central and right dot. (Reproduced from Ref. nov-prl-03).

cond

mat0411190-setup.jpg

0.492535

2de3b87521f24438934406f4f9b10a29

3D plot of a 4-node height profile with nodes at (± 20,± 20) and charges 2.0, -1.5, -1.0, and 0.5 (in units of 2ν/λ)

cond

mat0411194-162-227.jpg

0.508568

8667119a8fb74596844f896fa94e7f65

The radially symmetric bound states of the NLSE are depicted for k=k_0=1 in d=1, d=2, d=3, d=3.5.

cond

mat0411194-162-229.jpg

0.508336

3f883cabc75e435bab2db3d804df7257

Illustration of first step replica symmetry breaking. The limits n→ 0 and m→ x_c have to be taken with 0<x_c<1.

cond

mat0411195-1sbdia.jpg

0.454307

1f141d5b25ba48529f6663a9734ab878

Plot of Δ_F/ vs. L. The parameters are the same as in Fig. <ref> and we average over 1000 random potential realizations.

cond

mat0411195-delf.jpg

0.424637

50ab2013b55c43f28731a3d134045e9c

A plot of ln(-S/L+ln 6) vs. ln(ln V/|ln(1-x)|). The labels are marked according to the chain length.

cond

mat0411195-fig1n.jpg

0.459227

4b70ad81fbfb4e91a669e14ffd75c4a8

Plot of vs. L. The dotted line is generated by averaging over 10000 samples, and error bars are found by computing the standard deviation of 10 sets of 1000 samples. The dashed line is the RS solution, and the solid line is the RSB solution.

cond

mat0411195-rf0125.jpg

0.47175

1338f42bc85b45d99e280869f40d0ca9

Plot of x_c vs. L. The parameters are the same as those used in Fig. <ref>.

cond

mat0411195-zplot.jpg

0.506007

77701153c1c746f58891c81ccc4dbac7

A plot of the observed vs. calculated end-to-end distance

cond

mat0411195-zrlog.jpg

0.426955

dce98ab8332e4a8ebf6bc193f0fc4c94

T_c as a function of the total occupation number n_T (where n_T=n_σ^d+n_-σ^d). In (a) and (b), the dotted lines show the previous results from Ref. <cit.> for U=12|t^d|. The solid lines show the behavior of T_c in the present approach. The figures (c) and (d) show the present results for U=8|t^d|. The units of the hybridization V_0^pd are electron-volts (eV). (t^d=-0.5eV.)

cond

mat0411200-calegari-549-f1.jpg

0.446312

475ef4762fde4b9c8a5dc69d623ec646

The pair amplitude F(Z), normalized to its bulk value F_0, for a three layer SFS structure, plotted as a function of Z≡ k_FS z and of the dimensionless magnetic polarization I, at Λ=1 and H_B=0. The Z=0 point is at the center of the structure. Panel (a) corresponds to self consistent results obtained (see text) with an initial guess where the junction is of the “0” type and panel (b) with a “π” type. In the latter case, the solution found is of the π type except at very small I and in the neighborhood of I≈ 0.4, but in the former case (panel (a)), a more complicated behavior occurs, as discussed in the text.

cond

mat0411203-fig1.jpg

0.460427

b3e5a2e49b114a879883b7861e745399

The normalized pair amplitude F(Z) for a SFSFSFS seven layer structure, plotted as a function of Z and of the barrier height parameter H_B. Here I=0.2 and Λ=1. Panels (a) (b) (c) and (d) correspond, respectively, to attempts to find solutions of the 000, πππ, π0π and 0π0 types (see text). The resulting structure, however, it is not necessarily of the sought type, since some of the structures are unstable in part of the H_B range, as explained in the text. For clarity, the direction of increasing H_B is not the same in every panel.

cond

mat0411203-fig2.jpg

0.45617

849868bb7e3a48f282d3f599b5cb562e

The normalized pair amplitude F(Z) for a SFSFSFS seven layer structure, as in the previous Figure. The top and bottom panels correspond to initial attempts to find the asymmetric π00 and ππ0 states respectively. Clearly such attempts only succeed when the barrier is high and the proximity effects weak (see text).

cond

mat0411203-fig2a.jpg

0.454486

edc70a96678648afa8001197f30f6132

The normalized pair amplitude F(Z) for a SFSFSFS seven layer structure, plotted as in Fig. <ref> and with the same panel arrangements, but as a function of the mismatch parameter Λ at zero barrier. Note that the direction of increasing Λ is, for clarity, not the same in all the panels.

cond

mat0411203-fig3.jpg

0.429833

b3ba88ab2f724956a781104bcd187ed8

The normalized DOS (see text) for a SFS trilayer, plotted as a function of the energy (in units of the bulk zero temperature gap), and of the exchange energy parameter I≡ h_0/E_FS. The panel arrangement is the same as in Fig. <ref>: therefore the plots correspond to 0 and π self consistent states as in that figure.

cond

mat0411203-fig3a.jpg

0.438559

84efbf1e648c4d438815f4d28e5c3eee

The normalized DOS for a SFS trilayer, plotted as a function of the energy, and of the mismatch parameter Λ, at I=0.2 and H_B=0. The panel arrangement again corresponds to that in Fig. <ref>. In the bottom panel, the results plotted are for a self consistent π structure, while in the top panel they are for a 0 structure for Λ <0.64 and a π structure at smaller mismatch, when the 0 structure is not stable.

cond

mat0411203-fig4.jpg

0.446376

5ac6e58c9ab6469abaec64cff2b3e2d1

The normalized DOS for a SFS trilayer, plotted and displayed as in Fig. <ref>, and under the same conditions, but as a function of barrier height rather than mismatch. The results shown in the bottom panel correspond to a π structure, while those the top panel they are for a 0 structure for H_B>0.29 and a π structure at smaller barrier height values, when the 0 structure is not stable (see text).

cond

mat0411203-fig5.jpg

0.489844

c1effe02f4c8444bae6a0239f6253b94

The normalized DOS for a SFS trilayer, plotted as a function of the energy. Results for both 0 and π self consistent states are given, as indicated. These are slices from Figs. <ref> and <ref>. In the top panel, the DOS is shown at H_B=0 for two different values of the mismatch parameter, Λ=0.2, and 0.67, the latter being a case for which the 0 state is nearly unstable (see text). The bottom panel shows the DOS profile in the absence of mismatch (Λ=1), but with the interface scattering parameter H_B taking on the two values shown, chosen on similar criteria as the Λ values (see text).

cond

mat0411203-fig6.jpg

0.424591

8168b53dc35f4857aae2ef3b49fb0cff

The normalized DOS for the SFSFSFS structure of Figs. <ref> and <ref>, with the same panel arrangements as in those figures, plotted as a function of the energy and of the mismatch parameter Λ.

cond

mat0411203-fig7.jpg

0.460591

e42bfa0c6b984eca929f37779ef86998

The normalized DOS for the SFSFSFS structure of Figs. <ref>, <ref> and <ref>, plotted as in Fig. <ref> except as a function of barrier height H_B instead of Λ.

cond

mat0411203-fig8.jpg

0.498638

4132dfe10cb4404aa9e4a07a41a593dd

Various total system energies with a vortex present versus system radius R.

cond

mat0411205-E2R.jpg

0.445502

e22b714067e94828814279b02d273342

Application of the L-dependence of the fourth order cumulant U_L on various system sizes to estimate T_c/J≈ 0.48 (common crossing point of the data) at 16% vacancy density in the XY model.

cond

mat0411205-UL16lam0.jpg

0.417781

68e4e9c5d4654c918cae89cf7d40acd8

Application of the finite-size scaling of in-plane susceptibility to estimate T_c/J ≈ 0.478 (common crossing point of the data) at 16% vacancy density in the XY model, using exponent η=1/4.

cond

mat0411205-chi_lam0_16.jpg

0.458297

e39559b47ef6437c927cf6e8a5e9357f

Application of the finite-size scaling of in-plane susceptibility to estimate T_c/J ≈ 0.404 (common crossing point of the data) at 16% vacancy density at the vortex-on-vacancy critical anistropy.

cond

mat0411205-chi_lamcv_16.jpg

0.552412

d18e36a4d30c4daf84f8d2a7997ca540

Out-of-plane susceptibilities χ^zz vs. temperature for L=128, at the three anisotropies studied. The lower curves at low T (open symbols) correspond to ρ_vac=0, the upper curves (solid symbols) correspond to ρ_vac=0.16 . Unlike χ^xx or χ^yy, there is only a very weak dependence of χ^zz on L, mostly in the high-temperature phase.

cond

mat0411205-chiz.jpg

0.456039

1a82ded0c5984dfd9423f6b9d8c9a920

For the model with edge L=64, at the XY limit, the internal energy, absolute magnetization, and specific heat per spin for the uniform system and with 16% vacancy density.

cond

mat0411205-eclam0.jpg

0.468719

251fca525d8c427d87a8d8da71ca1ca3

For the model with edge L=64, at the vortex-in-plaquette critical anisotropy, the internal energy, absolute magnetization, and specific heat per spin for the uniform system and with 16% vacancy density.

cond

mat0411205-eclam7.jpg

0.489546

91d1fa0c76e84f3a9b51ea21cdfa4176

For the model with edge L=64, at the vortex-on-vacancy critical anisotropy, the internal energy, absolute magnetization and specific heat per spin for the uniform system and with 16% vacancy density.

cond

mat0411205-eclamcv.jpg

0.453273

e65255d9a9ca43c79c1f12eeece0ad9f

Thermally induced vorticity density for the uniform XY model [ρ(0)] and at 16% vacancy density [ρ(0.16)]. Also displayed are the vorticity fraction pinned on vacancies [f_pin] and the fraction with doubled charges [f_dbl], both when ρ_vac=0.16.

cond

mat0411205-rho_lam0.jpg

0.461367

6f8a9bec8fdd4b20aca58628dcef827b

Thermally induced vorticity density [ρ(0)] at the vortex-on-vacancy critical anisotropy with 16% vacancy density [ρ(0.16)]. Also displayed are the vorticity fraction pinned on vacancies [f_pin] and the fraction due to double charges [f_dbl], at 16% vacancy density.

cond

mat0411205-rho_lamcv.jpg

0.430585

2f141713a0504bd99cd52504fd52769f

Magnetoresistance ρ_⊥ (H, θ, ϕ) as a function of "dimensionless magnetic field", h=ω_b(H, θ = π/2) τ [see Eq.(7)], calculated by means of Eq.(15) for Q1D electron spectrum (1) with f(p_y b^*)=cos(p_y b^*), t_a/t_b = 8.5, b^*=c^*/2. Upper curve: non-saturated magnetoresistance for localized electron wave functions (11)-(13) at θ =3.5^o and ϕ = 2.6^o. Lower curve: saturated magnetoresistance for de-localized wave functions (11)-(13) at θ =3.5^o and ϕ = 1.75^o, corresponding to commensurate direction (4) of a magnetic field (3) with n=1.

cond

mat0411206-PRB-fig1.jpg

0.428538

24e6033d081e4d349cb74cbf6dd4e807

Solid curve: magnetoresistance ρ_⊥ (H, θ, ϕ) as a function of angle ϕ calculated at θ =7^o by means of Eq.(15) for f(p_y b^*) given by Eq.(5) with Δ/2t_b = 0.1, t_a/t_b = 10, b^*=c^*/2, h=ω_b(H, θ = π/2) τ =15. Dotes: experimental points [35] obtained on (TMTSF)_2ClO_4 conductor at θ =7^o and H = 10 T [35,38].

cond

mat0411206-PRB-fig2.jpg

0.440497

83324f44049b45f7acfff3d515ab4dda

(a) Ranges of interaction between normal vectors of triangles for S_2 in (<ref> ), and (b) those for S_2 in (<ref>). The normal vector of the shaded triangle interacts with those of the surrounding triangles in (a) and (b). Small spheres represent vertices.

cond

mat0411209-fig-1.jpg

0.446392

67649af978a04d81abf84a8874e931da

(a) S_1/N_B vs b of Model-1, and (b) S_1/N_B vs b of Model-2, where N_B is the total number of bond. N=1500.

cond

mat0411209-fig-2.jpg

0.448633

be4bdcdfe17a4ee0a76241a85cb407a8

(a) C_S_2 vs b, and (b) C_S_2^ max vs N in log-log scale, both (a) and (b) are obtained by Model-1 whose Hamiltonian is S_1+bS_2. (c) C_S_2 vs b, and (d) C_S_2^ max vs N in log-log scale, both (c) and (d) are obtained by Model-2 whose Hamiltonian is bS_2+V.

cond

mat0411209-fig-3.jpg

0.443172

32bc673c0dfc4d0aa239bfa8e256817b

(a) Variation of S_2/N_B against the number of MCS, and (b) the histogram h(S_2/N_B), obtained by Model-1. The results obtained by Model-2 are shown in (c) and (d).

cond

mat0411209-fig-4.jpg

0.464391

da1ef7132eea4b008f75cc433768d109

(a) Variation of X^2 against the number of MCS, and (b) the histogram h(X^2), obtained by Model-1. The results obtained by Model-2 are shown in (c) and (d).

cond

mat0411209-fig-5.jpg

0.468538

12af7548ef6b4e438156ecd75e76fb8b

(a) X^2 vs b of Model-1, (b) X^2 vs N at the transition point b=b_c(N). The results obtained by Model-2 are shown in (c) and (d).

cond

mat0411209-fig-6.jpg

0.427186

aaca0c5a40f9444a81e54ea058cecf6e

Snapshots of Model-1 surfaces obtained at (a) b=0.475(crumpled phase), (b) b=0.478(smooth phase), and the sections of the surfaces in (a) and (b) are shown in (c) and (d) respectively. N=2500.

cond

mat0411209-fig-7.jpg

0.377996

cd68b27dda3d438cba6e2a83714065c7

C_S_2 vs b at (a) α=-5.5, L=1.5L_0(N) and (b) α=-5.5, L=3L_0(N). μ=15.9 (◯), μ=15.5 (), and μ=14.8 () respectively correspond to N≃1500, N≃1000, and N≃500.

cond

mat0411210-fig-1.jpg

0.395514

526aee2eb1064ade9eed2c66a16029d9

C_S_2^ max vs ⟨ N⟩ in log-log scale at (a) α=-5.5, L=1.5L_0, and at (b) α=-5.5, L=3L_0.

cond

mat0411210-fig-2.jpg

0.42196

131369d011e74f6fbe52bb5605dbeff9

Variation of ⟨ S_2⟩ /⟨ N_B⟩ against MCS at (a) b=1.86, L=1.5L_0 (at the critical point of the continuous transition) and at (b) b=1.86, L=3L_0 (at the discontinuous transition point), where α=-5.5, μ=15.9.

cond

mat0411210-fig-3.jpg

0.395847

2df063c4bef645cc91956adf17313f82

σ vs b obtained at (a) α=-5.5, L=1.5L_0 and at (b) α=-5.5, L=3L_0.

cond

mat0411210-fig-4.jpg

0.494232

f3e16f23092c4e19a925bd381c2ddf99

σ vs ⟨ N⟩ in log-log scale obtained at (a) α=-5.5, L=1.5L_0 and at (b) α=-5.5, L=3L_0.

cond

mat0411210-fig-5.jpg

0.411342

4e126ec2cd844f56a26aba093e882426

Snapshots of surfaces at (a) b=1.86, α=-5.5, L=1.5L_0 and at (b) b=1.86, α=-5.5, L=3L_0.

cond

mat0411210-fig-6.jpg

0.505478

f4f967f3f7e34358882a191a84b28f28

(a) X^2 obtained at relatively small α in the vicinity of the boundary between the crumpled and the tubular phases, (b) X^2 obtained at relatively large α in the vicinity of the boundary between the tubular and the smooth phases. The unit of X^2 and α is kT/a, where a is the surface tension.

cond

mat0411211-fig-1.jpg

0.463775

1f8c5afc329d40b382423deee797418f

(a) Log-log plot of X^2 vs N at α=50 (crumpled phase), and α=200 (tubular phase), and (b) those obtained at α close to the phase boundary of the discontinuous transition. The unit of X^2 is kT/a.

cond

mat0411211-fig-2.jpg

0.419886

89d5eb32093440398526061db68e2c72

Snapshots of N=1000 surfaces obtained at (a) α=50 (crumpled), (b) α=200 (tubular), (c) α=12000 (tubular), and (d) α=16000 (smooth). Surfaces in (a), (b), and (d) are drawn in the same scale, which is different from that in (c).

cond

mat0411211-fig-3.jpg

0.444747

82186dd1db1d4eee8cc8d17a6b8e7989

Normalized distribution h(L) of the bond length L obtained at (a) α=50 (crumpled), and α=200 (tubular), and at (b) α=12000 (tubular), and α=16000 (smooth), on N=1000 surfaces. The unit of L is √(kT/a).

cond

mat0411211-fig-4.jpg

0.439588

2962d7a3d46c409bbb8008789af83afb

Maximum bond length L_ max at (a) relatively small α, and at (b) relatively large α. The unit of L_ max is √(kT/a), and that of α is kT/a

cond

mat0411211-fig-5.jpg

0.424836

a00d5c9892274cb88c195cb712a5e904

The bending energy S_2/N_B=∑_i(1-cosθ_i)/N_B at (a) relatively small α, and at (b) relatively large α. N_B is the total number of bond. The unit of α is kT/a.

cond

mat0411211-fig-6.jpg

0.441646

e8559cb4744143e6b0fba8d6e5c9271e

(a) One (out of five) of the symmetry coordinates of the F_1u mode which modulates Cr–Cr exchange, arrows show displacements; (b) spin ordering expected for a tetragonally distorted tetrahedron in ZnCr_2O_4, arrows indicate spins.

cond

mat0411213-fig1.jpg

0.382733

50611f06be3748e38604986d14af17ff

(Color online) Top curve: R_LT — reflectivity spectrum of ZnCr_2O_4 single crystal in the low-temperature phase; bottom curve: 2(R_LT-R_HT); inset: R_LT and R_HT (line+symbols) in a narrow range.

cond

mat0411213-fig2.jpg

0.397527

6c47fbae294643118dcd400254875e86

(Color online) Temperature dependence of the fit parameters for the split phonon in ZnCr_2O_4; symbols — fit; squares, circles, and triangles at 7 K — fits of polarized spectra with P=0^∘, 45^∘, 90^∘, respectively.

cond

mat0411213-fig3.jpg

0.47895

8c43b042b39640c0a25b8c0372c11ec2

Crosses: nearest-neighbor correlations ⟨ S_i · S_j ⟩, up to an arbitrary additive constant, derived from the specific-heat data of Martinho et al. <cit.>; straight line fits crosses below 50 K. Squares: the phonon frequency.

cond

mat0411213-fig4.jpg

0.513377

325f03c44d3b4c10a01125d12d86ee86

The average normal stress <σ_xx (x,t) > in the case α_M=0 as a function of x.

cond

mat0411214-AVSXX0.jpg